Flexible solid-state supercapacitors based on three-dimensional graphene hydrogel films.

PubMed

Xu, Yuxi; Lin, Zhaoyang; Huang, Xiaoqing; Liu, Yuan; Huang, Yu; Duan, Xiangfeng

2013-05-28

Flexible solid-state supercapacitors are of considerable interest as mobile power supply for future flexible electronics. Graphene or carbon nanotubes based thin films have been used to fabricate flexible solid-state supercapacitors with high gravimetric specific capacitances (80-200 F/g), but usually with a rather low overall or areal specific capacitance (3-50 mF/cm(2)) due to the ultrasmall electrode thickness (typically a few micrometers) and ultralow mass loading, which is not desirable for practical applications. Here we report the exploration of a three-dimensional (3D) graphene hydrogel for the fabrication of high-performance solid-state flexible supercapacitors. With a highly interconnected 3D network structure, graphene hydrogel exhibits exceptional electrical conductivity and mechanical robustness to make it an excellent material for flexible energy storage devices. Our studies demonstrate that flexible supercapacitors with a 120 μm thick graphene hydrogel thin film can exhibit excellent capacitive characteristics, including a high gravimetric specific capacitance of 186 F/g (up to 196 F/g for a 42 μm thick electrode), an unprecedented areal specific capacitance of 372 mF/cm(2) (up to 402 mF/cm(2) for a 185 μm thick electrode), low leakage current (10.6 μA), excellent cycling stability, and extraordinary mechanical flexibility. This study demonstrates the exciting potential of 3D graphene macrostructures for high-performance flexible energy storage devices.

Low-temperature direct synthesis of mesoporous vanadium nitrides for electrochemical capacitors

NASA Astrophysics Data System (ADS)

Lee, Hae-Min; Jeong, Gyoung Hwa; Kim, Sang-Wook; Kim, Chang-Koo

2017-04-01

Mesoporous vanadium nitrides are directly synthesized by a one-step chemical precipitation method at a low temperature (70 °C). Structural and morphological analyses reveal that vanadium nitride consist of long and slender nanowhiskers, and mesopores with diameters of 2-5 nm. Compositional analysis confirms the presence of vanadium in the VN structure, along with oxidized vanadium. The cyclic voltammetry and charge-discharge tests indicate that the obtained material stores charges via a combination of electric double-layer capacitance and pseudocapacitance mechanisms. The vanadium nitride electrode exhibits a specific capacitance of 598 F/g at a current density of 4 A/g. After 5000 charge-discharge cycles, the electrode has an equivalent series resistance of 1.42 Ω and retains 83% of its initial specific capacitance. This direct low-temperature synthesis of mesoporous vanadium nitrides is a simple and promising method to achieve high specific capacitance and low equivalent series resistance for electrochemical capacitor applications.

Influence of the internal wall thickness of electrical capacitance tomography sensors on image quality

NASA Astrophysics Data System (ADS)

Liang, Shiguo; Ye, Jiamin; Wang, Haigang; Wu, Meng; Yang, Wuqiang

2018-03-01

In the design of electrical capacitance tomography (ECT) sensors, the internal wall thickness can vary with specific applications, and it is a key factor that influences the sensitivity distribution and image quality. This paper will discuss the effect of the wall thickness of ECT sensors on image quality. Three flow patterns are simulated for wall thicknesses of 2.5 mm to 15 mm on eight-electrode ECT sensors. The sensitivity distributions and potential distributions are compared for different wall thicknesses. Linear back-projection and Landweber iteration algorithms are used for image reconstruction. Relative image error and correlation coefficients are used for image evaluation using both simulation and experimental data.

Improved Capacitive Liquid Sensor

NASA Technical Reports Server (NTRS)

Waldman, Francis A.

1992-01-01

Improved capacitive sensor used to detect presence and/or measure thickness of layer of liquid. Electrical impedance or admittance of sensor measured at prescribed frequency, and thickness of liquid inferred from predetermined theoretical or experimental relationship between impedance and thickness. Sensor is basically a three-terminal device. Features interdigitated driving and sensing electrodes and peripheral coplanar ground electrode that reduces parasitic effects. Patent-pending because first to utilize ground plane as "shunting" electrode. System less expensive than infrared, microwave, or refractive-index systems. Sensor successfully evaluated in commercial production plants to characterize emulsions, slurries, and solutions.

Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer

NASA Astrophysics Data System (ADS)

Wang, L. S.; Xu, J. P.; Zhu, S. Y.; Huang, Y.; Lai, P. T.

2013-08-01

The interfacial and electrical properties of sputtered HfTiON on sulfur-passivated GaAs with or without TaON as interfacial passivation layer (IPL) are investigated. Experimental results show that the GaAs metal-oxide-semiconductor capacitor with HfTiON/TaON stacked gate dielectric annealed at 600 °C exhibits low interface-state density (1.0 × 1012 cm-2 eV-1), small gate leakage current (7.3 × 10-5 A cm-2 at Vg = Vfb + 1 V), small capacitance equivalent thickness (1.65 nm), and large equivalent dielectric constant (26.2). The involved mechanisms lie in the fact that the TaON IPL can effectively block the diffusions of Hf, Ti, and O towards GaAs surface and suppress the formation of interfacial As-As bonds, Ga-/As-oxides, thus unpinning the Femi level at the TaON/GaAs interface and improving the interface quality and electrical properties of the device.

Multidimensional Cyclic Voltammetry Simulations of Pseudocapacitive Electrodes with a Conducting Nanorod Scaffold

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mei, Bing-Ang; Li, Bin; Lin, Jie

This paper aims to understand the effect of nanoarchitecture on the performance of pseudocapacitive electrodes consisting of conducting scaffold coated with pseudocapacitive material. To do so, two-dimensional numerical simulations of ordered conducting nanorods coated with a thin film of pseudocapacitive material were performed. The simulations reproduced three-electrode cyclic voltammetry measurements based on a continuum model derived from first principles. Two empirical approaches commonly used experimentally to characterize the contributions of surface-controlled and diffusion-controlled charge storage mechanisms to the total current density with respect to scan rate were theoretically validated for the first time. Moreover, the areal capacitive capacitance, attributed tomore » EDL formation, remained constant and independent of electrode dimensions, at low scan rates. However, at high scan rates, it decreased with decreasing conducting nanorod radius and increasing pseudocapacitive layer thickness due to resistive losses. By contrast, the gravimetric faradaic capacitance, due to reversible faradaic reactions, decreased continuously with increasing scan rate and pseudocapacitive layer thickness but was independent of conducting nanorod radius. Note that the total gravimetric capacitance predicted numerically featured values comparable to experimental measurements. Finally, an optimum pseudocapacitive layer thickness that maximizes total areal capacitance was identified as a function of scan rate and confirmed by scaling analysis.« less

Multidimensional Cyclic Voltammetry Simulations of Pseudocapacitive Electrodes with a Conducting Nanorod Scaffold

DOE PAGES

Mei, Bing-Ang; Li, Bin; Lin, Jie; ...

2017-10-27

This paper aims to understand the effect of nanoarchitecture on the performance of pseudocapacitive electrodes consisting of conducting scaffold coated with pseudocapacitive material. To do so, two-dimensional numerical simulations of ordered conducting nanorods coated with a thin film of pseudocapacitive material were performed. The simulations reproduced three-electrode cyclic voltammetry measurements based on a continuum model derived from first principles. Two empirical approaches commonly used experimentally to characterize the contributions of surface-controlled and diffusion-controlled charge storage mechanisms to the total current density with respect to scan rate were theoretically validated for the first time. Moreover, the areal capacitive capacitance, attributed tomore » EDL formation, remained constant and independent of electrode dimensions, at low scan rates. However, at high scan rates, it decreased with decreasing conducting nanorod radius and increasing pseudocapacitive layer thickness due to resistive losses. By contrast, the gravimetric faradaic capacitance, due to reversible faradaic reactions, decreased continuously with increasing scan rate and pseudocapacitive layer thickness but was independent of conducting nanorod radius. Note that the total gravimetric capacitance predicted numerically featured values comparable to experimental measurements. Finally, an optimum pseudocapacitive layer thickness that maximizes total areal capacitance was identified as a function of scan rate and confirmed by scaling analysis.« less

Band-Pass Amplifier Without Discrete Reactance Elements

NASA Technical Reports Server (NTRS)

Kleinberg, L.

1984-01-01

Inherent or "natural" device capacitance exploited. Band-Pass Circuit has input impedance of equivalent circuit at frequencies much greater than operational-amplifier rolloff frequency. Apparent inductance and capacitance arise from combined effects of feedback and reactive component of amplifier gain in frequency range.

An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor.

PubMed

Moghadam, Reza M; Xiao, Zhiyong; Ahmadi-Majlan, Kamyar; Grimley, Everett D; Bowden, Mark; Ong, Phuong-Vu; Chambers, Scott A; Lebeau, James M; Hong, Xia; Sushko, Peter V; Ngai, Joseph H

2017-10-11

The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, the integration of gate materials that enable nonvolatile or hysteretic functionality in field-effect transistors could lead to device technologies that consume less power or allow for novel modalities in computing. Here we present electrical characterization of ultrathin single crystalline SrZr x Ti 1-x O 3 (x = 0.7) films epitaxially grown on a high mobility semiconductor, Ge. Epitaxial films of SrZr x Ti 1-x O 3 exhibit relaxor behavior, characterized by a hysteretic polarization that can modulate the surface potential of Ge. We find that gate layers as thin as 5 nm corresponding to an equivalent-oxide thickness of just 1.0 nm exhibit a ∼2 V hysteretic window in the capacitance-voltage characteristics. The development of hysteretic metal-oxide-semiconductor capacitors with nanoscale gate thicknesses opens new vistas for nanoelectronic devices.

Inkjet printing of metal-oxide-based transparent thin-film capacitors

NASA Astrophysics Data System (ADS)

Matavž, A.; Malič, B.; Bobnar, V.

2017-12-01

We report on the inkjet printing of transparent, thin-film capacitors (TTFCs) composed of indium-zinc-oxide electrodes and a tantalum-oxide-based dielectric on glass substrates. The printing parameters were adapted for the sequential deposition of functional layers, resulting in approximately 100-nm-thick transparent capacitors with a uniform thickness. The relatively high electrical resistivity of the electrodes is reflected in the frequency dispersive dielectric behaviour, which is explained in terms of an equivalent circuit. The resistivity of the electrode strongly decreases with the number of printing passes; consequently, any misalignment of the printed layers is detected in the measured response. At low frequency, the TTFCs show a stable intrinsic dielectric response and a high capacitance density of ˜280 nF/cm2. The good dielectric performance as well as the low leakage-current density (8 × 10-7 A/cm2 at 1 MV cm-1) of our capacitors indicates that inkjet printing can be used to produce all-printed, high-quality electrical devices.

Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer

NASA Astrophysics Data System (ADS)

Tan, Qiuhong; Wang, Qianjin; Liu, Yingkai; Yan, Hailong; Cai, Wude; Yang, Zhikun

2018-04-01

Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd)4Ti3O12 films as insulator, and HfO2 films as defect control layer were developed and fabricated. The prepared SWCNT-FeFETs possess excellent properties such as large channel conductance, high on/off current ratio, high channel carrier mobility, great fatigue endurance performance, and data retention. Despite its thin capacitance equivalent thickness, the gate insulator with HfO2 defect control layer shows a low leakage current density of 3.1 × 10-9 A/cm2 at a gate voltage of - 3 V.

Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer.

PubMed

Tan, Qiuhong; Wang, Qianjin; Liu, Yingkai; Yan, Hailong; Cai, Wude; Yang, Zhikun

2018-04-27

Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd) 4 Ti 3 O 12 films as insulator, and HfO 2 films as defect control layer were developed and fabricated. The prepared SWCNT-FeFETs possess excellent properties such as large channel conductance, high on/off current ratio, high channel carrier mobility, great fatigue endurance performance, and data retention. Despite its thin capacitance equivalent thickness, the gate insulator with HfO 2 defect control layer shows a low leakage current density of 3.1 × 10 -9  A/cm 2 at a gate voltage of - 3 V.

An approach to evaluate capacitance, capacitive reactance and resistance of pivoted pads of a thrust bearing

NASA Astrophysics Data System (ADS)

Prashad, Har

1992-07-01

A theoretical approach is developed for determining the capacitance and active resistance between the interacting surfaces of pivoted pads and thrust collar, under different conditions of operation. It is shown that resistance and capacitive reactance of a thrust bearing decrease with the number of pads times the values of these parameters for an individual pad, and that capacitance increases with the number of pads times the capacitance of an individual pad. The analysis presented has a potential to diagnose the behavior of pivoted pad thrust bearings with the angle of tilt and the ratio of film thickness at the leading to trailing edge, by determining the variation of capacitance, resistance, and capacitive reactance.

Admittance–voltage profiling of Al{sub x}Ga{sub 1−x}N/GaN heterostructures: Frequency dependence of capacitance and conductance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Köhler, K.; Pletschen, W.; Godejohann, B.

2015-11-28

Admittance–voltage profiling of Al{sub x}Ga{sub 1−x}N/GaN heterostructures was used to determine the frequency dependent capacitance and conductance of FET devices in the frequency range from 50 Hz to 1 MHz. The nominally undoped low pressure metal-organic vapor-phase epitaxy structures were grown with an Al-content of 30%. An additional 1 nm thick AlN interlayer was placed in one structure before the Al{sub 0.3}Ga{sub 0.7}N layer growth. For frequencies below 10{sup 8} Hz it is convenient to use equivalent circuits to represent electric or dielectric properties of a material, a method widely used, for example, in impedance spectroscopy. We want to emphasize the relation betweenmore » frequency dependent admittance–voltage profiling and the corresponding equivalent circuits to the complex dielectric function. Debye and Drude models are used for the description of the frequency dependent admittance profiles in a range of depletion onset of the two-dimensional electron gas. Capacitance- and conductance-frequency profiles are fitted in the entire measured range by combining both models. Based on our results, we see contributions to the two-dimensional electron gas for our samples from surface states (80%) as well as from background doping in the Al{sub 0.3}Ga{sub 0.7}N barriers (20%). The specific resistance of the layers below the gate is above 10{sup 5} Ω cm for both samples and increases with increasing negative bias, i.e., the layers below the gate are essentially depleted. We propose that the resistance due to free charge carriers, determined by the Drude model, is located between gate and drain and, because of the AlN interlayer, the resistance is lowered by a factor of about 30 if compared to the sample without an AlN layer.« less

All-nanotube stretchable supercapacitor with low equivalent series resistance.

PubMed

Gilshteyn, Evgenia P; Amanbayev, Daler; Anisimov, Anton S; Kallio, Tanja; Nasibulin, Albert G

2017-12-12

We report high-performance, stable, low equivalent series resistance all-nanotube stretchable supercapacitor based on single-walled carbon nanotube film electrodes and a boron nitride nanotube separator. A layer of boron nitride nanotubes, fabricated by airbrushing from isopropanol dispersion, allows avoiding problem of high internal resistance and short-circuiting of supercapacitors. The device, fabricated in a two-electrode test cell configuration, demonstrates electrochemical double layer capacitance mechanism and retains 96% of its initial capacitance after 20 000 electrochemical charging/discharging cycles with the specific capacitance value of 82 F g -1 and low equivalent series resistance of 4.6 Ω. The stretchable supercapacitor prototype withstands at least 1000 cycles of 50% strain with a slight increase in the volumetric capacitance from 0.4 to 0.5 mF cm -3 and volumetric power density from 32 mW cm -3 to 40 mW cm -3 after stretching, which is higher than reported before. Moreover, a low resistance of 250 Ω for the as-fabricated stretchable prototype was obtained, which slightly decreased with the strain applied up to 200 Ω. Simple fabrication process of such devices can be easily extended making the all-nanotube stretchable supercapacitors, presented here, promising elements in future wearable devices.

Silicon base plate with low parasitic electrical interference for sensors

NASA Technical Reports Server (NTRS)

Tang, Tony K. (Inventor); Gutierrez, Roman C. (Inventor)

2002-01-01

A microgyroscope has a baseplate made of the same material as the rest of the microgyroscope. The baseplate is a silicon baseplate having a heavily p-doped epilayer covered by a thick dielectric film and metal electrodes. The metal electrodes are isolated from the ground plane by the dielectric. This provides very low parasitic capacitive coupling between the electrodes. The thick dielectric reduces the capacitance between the electrodes and the ground plane.

Linear phase compressive filter

DOEpatents

McEwan, Thomas E.

1995-01-01

A phase linear filter for soliton suppression is in the form of a laddered series of stages of non-commensurate low pass filters with each low pass filter having a series coupled inductance (L) and a reverse biased, voltage dependent varactor diode, to ground which acts as a variable capacitance (C). L and C values are set to levels which correspond to a linear or conventional phase linear filter. Inductance is mapped directly from that of an equivalent nonlinear transmission line and capacitance is mapped from the linear case using a large signal equivalent of a nonlinear transmission line.

Development of Electrochemical Supercapacitors for EMA Applications

NASA Technical Reports Server (NTRS)

Kosek, John A.; Dunning, Thomas; LaConti, Anthony B.

1996-01-01

A limitation of the typical electrochemical capacitor is the maximum available power and energy density, and an improvement in capacitance per unit weight and volume is needed. A solid-ionomer electrochemical capacitor having a unit cell capacitance greater than 2 F/sq cm and a repeating element thickness of 6 mils has been developed. This capacitor could provide high-current pulses for electromechanical actuation (EMA). Primary project objectives were to develop high-capacitance particulates, to increase capacitor gravimetric and volumetric energy densities above baseline and to fabricate a 10-V capacitor with a repeating element thickness of 6 mils or less. Specific EMA applications were identified and capacitor weight and volume projections made.

Effects of Complex Structured Anodic Oxide Dielectric Layer Grown in Pore Matrix for Aluminum Capacitor.

PubMed

Shin, Jin-Ha; Yun, Sook Young; Lee, Chang Hyoung; Park, Hwa-Sun; Suh, Su-Jeong

2015-11-01

Anodization of aluminum is generally divided up into two types of anodic aluminum oxide structures depending on electrolyte type. In this study, an anodization process was carried out in two steps to obtain high dielectric strength and break down voltage. In the first step, evaporated high purity Al on Si wafer was anodized in oxalic acidic aqueous solution at various times at a constant temperature of 5 degrees C. In the second step, citric acidic aqueous solution was used to obtain a thickly grown sub-barrier layer. During the second anodization process, the anodizing potential of various ranges was applied at room temperature. An increased thickness of the sub-barrier layer in the porous matrix was obtained according to the increment of the applied anodizing potential. The microstructures and the growth of the sub-barrier layer were then observed with an increasing anodizing potential of 40 to 300 V by using a scanning electron microscope (SEM). An impedance analyzer was used to observe the change of electrical properties, including the capacitance, dissipation factor, impedance, and equivalent series resistance (ESR) depending on the thickness increase of the sub-barrier layer. In addition, the breakdown voltage was measured. The results revealed that dielectric strength was improved with the increase of sub-barrier layer thickness.

Circuital characterisation of space-charge motion with a time-varying applied bias

PubMed Central

Kim, Chul; Moon, Eun-Yi; Hwang, Jungho; Hong, Hiki

2015-01-01

Understanding the behaviour of space-charge between two electrodes is important for a number of applications. The Shockley-Ramo theorem and equivalent circuit models are useful for this; however, fundamental questions of the microscopic nature of the space-charge remain, including the meaning of capacitance and its evolution into a bulk property. Here we show that the microscopic details of the space-charge in terms of resistance and capacitance evolve in a parallel topology to give the macroscopic behaviour via a charge-based circuit or electric-field-based circuit. We describe two approaches to this problem, both of which are based on energy conservation: the energy-to-current transformation rule, and an energy-equivalence-based definition of capacitance. We identify a significant capacitive current due to the rate of change of the capacitance. Further analysis shows that Shockley-Ramo theorem does not apply with a time-varying applied bias, and an additional electric-field-based current is identified to describe the resulting motion of the space-charge. Our results and approach provide a facile platform for a comprehensive understanding of the behaviour of space-charge between electrodes. PMID:26133999

Voltage and partial pressure dependent defect chemistry in (La,Sr)FeO3–δ thin films investigated by chemical capacitance measurements

PubMed Central

Rupp, Ghislain M.; Fleig, Jürgen

2018-01-01

La0.6Sr0.4FeO3–δ (LSF) thin films of different thickness were prepared by pulsed laser deposition on yttria stabilized zirconia (YSZ) and characterized by using three electrode impedance spectroscopy. Electrochemical film capacitance was analyzed in relation to oxygen partial pressure (0.25 mbar to 1 bar), DC polarization (0 m to –600 m) and temperature (500 to 650 °C). For most measurement parameters, the chemical bulk capacitance dominates the overall capacitive properties and the corresponding defect chemical state depends solely on the oxygen chemical potential inside the film, independent of atmospheric oxygen pressure and DC polarization. Thus, defect chemical properties (defect concentrations and defect formation enthalpies) could be deduced from such measurements. Comparison with LSF defect chemical bulk data from the literature showed good agreement for vacancy formation energies but suggested larger electronic defect concentrations in the films. From thickness-dependent measurements at lower oxygen chemical potentials, an additional capacitive contribution could be identified and attributed to the LSF|YSZ interface. Deviations from simple chemical capacitance models at high pressures are most probably due to defect interactions. PMID:29671421

Voltage and partial pressure dependent defect chemistry in (La,Sr)FeO3-δ thin films investigated by chemical capacitance measurements.

PubMed

Schmid, Alexander; Rupp, Ghislain M; Fleig, Jürgen

2018-05-03

La0.6Sr0.4FeO3-δ (LSF) thin films of different thickness were prepared by pulsed laser deposition on yttria stabilized zirconia (YSZ) and characterized by using three electrode impedance spectroscopy. Electrochemical film capacitance was analyzed in relation to oxygen partial pressure (0.25 mbar to 1 bar), DC polarization (0 m to -600 m) and temperature (500 to 650 °C). For most measurement parameters, the chemical bulk capacitance dominates the overall capacitive properties and the corresponding defect chemical state depends solely on the oxygen chemical potential inside the film, independent of atmospheric oxygen pressure and DC polarization. Thus, defect chemical properties (defect concentrations and defect formation enthalpies) could be deduced from such measurements. Comparison with LSF defect chemical bulk data from the literature showed good agreement for vacancy formation energies but suggested larger electronic defect concentrations in the films. From thickness-dependent measurements at lower oxygen chemical potentials, an additional capacitive contribution could be identified and attributed to the LSF|YSZ interface. Deviations from simple chemical capacitance models at high pressures are most probably due to defect interactions.

Electromechanical coupling factor of capacitive micromachined ultrasonic transducers.

PubMed

Caronti, Alessandro; Carotenuto, Riccardo; Pappalardo, Massimo

2003-01-01

Recently, a linear, analytical distributed model for capacitive micromachined ultrasonic transducers (CMUTs) was presented, and an electromechanical equivalent circuit based on the theory reported was used to describe the behavior of the transducer [IEEE Trans. Ultrason. Ferroelectr. Freq. Control 49, 159-168 (2002)]. The distributed model is applied here to calculate the dynamic coupling factor k(w) of a lossless CMUT, based on a definition that involves the energies stored in a dynamic vibration cycle, and the results are compared with those obtained with a lumped model. A strong discrepancy is found between the two models as the bias voltage increases. The lumped model predicts an increasing dynamic k factor up to unity, whereas the distributed model predicts a more realistic saturation of this parameter to values substantially lower. It is demonstrated that the maximum value of k(w), corresponding to an operating point close to the diaphragm collapse, is 0.4 for a CMUT single cell with a circular membrane diaphragm and no parasitic capacitance (0.36 for a cell with a circular plate diaphragm). This means that the dynamic coupling factor of a CMUT is comparable to that of a piezoceramic plate oscillating in the thickness mode. Parasitic capacitance decreases the value of k(w), because it does not contribute to the energy conversion. The effective coupling factor k(eff) is also investigated, showing that this parameter coincides with k(w) within the lumped model approximation, but a quite different result is obtained if a computation is made with the more accurate distributed model. As a consequence, k(eff), which can be measured from the transducer electrical impedance, does not give a reliable value of the actual dynamic coupling factor.

Electromechanical coupling factor of capacitive micromachined ultrasonic transducers

NASA Astrophysics Data System (ADS)

Caronti, Alessandro; Carotenuto, Riccardo; Pappalardo, Massimo

2003-01-01

Recently, a linear, analytical distributed model for capacitive micromachined ultrasonic transducers (CMUTs) was presented, and an electromechanical equivalent circuit based on the theory reported was used to describe the behavior of the transducer [IEEE Trans. Ultrason. Ferroelectr. Freq. Control 49, 159-168 (2002)]. The distributed model is applied here to calculate the dynamic coupling factor kw of a lossless CMUT, based on a definition that involves the energies stored in a dynamic vibration cycle, and the results are compared with those obtained with a lumped model. A strong discrepancy is found between the two models as the bias voltage increases. The lumped model predicts an increasing dynamic k factor up to unity, whereas the distributed model predicts a more realistic saturation of this parameter to values substantially lower. It is demonstrated that the maximum value of kw, corresponding to an operating point close to the diaphragm collapse, is 0.4 for a CMUT single cell with a circular membrane diaphragm and no parasitic capacitance (0.36 for a cell with a circular plate diaphragm). This means that the dynamic coupling factor of a CMUT is comparable to that of a piezoceramic plate oscillating in the thickness mode. Parasitic capacitance decreases the value of kw, because it does not contribute to the energy conversion. The effective coupling factor keff is also investigated, showing that this parameter coincides with kw within the lumped model approximation, but a quite different result is obtained if a computation is made with the more accurate distributed model. As a consequence, keff, which can be measured from the transducer electrical impedance, does not give a reliable value of the actual dynamic coupling factor.

Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors

NASA Astrophysics Data System (ADS)

Zhang, Xufang; Okamoto, Dai; Hatakeyama, Tetsuo; Sometani, Mitsuru; Harada, Shinsuke; Iwamuro, Noriyuki; Yano, Hiroshi

2018-06-01

The impact of oxide thickness on the density distribution of near-interface traps (NITs) in SiO2/4H-SiC structure was investigated. We used the distributed circuit model that had successfully explained the frequency-dependent characteristics of both capacitance and conductance under strong accumulation conditions for SiO2/4H-SiC MOS capacitors with thick oxides by assuming an exponentially decaying distribution of NITs. In this work, it was found that the exponentially decaying distribution is the most plausible approximation of the true NIT distribution because it successfully explained the frequency dependences of capacitance and conductance under strong accumulation conditions for various oxide thicknesses. The thickness dependence of the NIT density distribution was also characterized. It was found that the NIT density increases with increasing oxide thickness, and a possible physical reason was discussed.

Capacitive Biosensors and Molecularly Imprinted Electrodes.

PubMed

Ertürk, Gizem; Mattiasson, Bo

2017-02-17

Capacitive biosensors belong to the group of affinity biosensors that operate by registering direct binding between the sensor surface and the target molecule. This type of biosensors measures the changes in dielectric properties and/or thickness of the dielectric layer at the electrolyte/electrode interface. Capacitive biosensors have so far been successfully used for detection of proteins, nucleotides, heavy metals, saccharides, small organic molecules and microbial cells. In recent years, the microcontact imprinting method has been used to create very sensitive and selective biorecognition cavities on surfaces of capacitive electrodes. This chapter summarizes the principle and different applications of capacitive biosensors with an emphasis on microcontact imprinting method with its recent capacitive biosensor applications.

Optical interferometry study of film formation in lubrication of sliding and/or rolling contacts

NASA Technical Reports Server (NTRS)

Stejskal, E. O.; Cameron, A.

1972-01-01

Seventeen fluids of widely varying physical properties and molecular structure were chosen for study. Film thickness and traction were measured simultaneously in point contacts by interferometry, from which a new theory of traction was proposed. Film thickness was measured in line contacts by interferometry and electrical capacitance to establish correlation between these two methods. An interferometric method for the absolute determination of refractive index in the contact zone was developed and applied to point contact fluid entrapments. Electrical capacitance was used to study the thickness and properties of the soft surface film which sometimes forms near a metal-fluid interface.

Linear phase compressive filter

DOEpatents

McEwan, T.E.

1995-06-06

A phase linear filter for soliton suppression is in the form of a laddered series of stages of non-commensurate low pass filters with each low pass filter having a series coupled inductance (L) and a reverse biased, voltage dependent varactor diode, to ground which acts as a variable capacitance (C). L and C values are set to levels which correspond to a linear or conventional phase linear filter. Inductance is mapped directly from that of an equivalent nonlinear transmission line and capacitance is mapped from the linear case using a large signal equivalent of a nonlinear transmission line. 2 figs.

Ultrahigh-rate supercapacitors with large capacitance based on edge oriented graphene coated carbonized cellulous paper as flexible freestanding electrodes

NASA Astrophysics Data System (ADS)

Ren, Guofeng; Li, Shiqi; Fan, Zhao-Xia; Hoque, Md Nadim Ferdous; Fan, Zhaoyang

2016-09-01

Large-capacitance and ultrahigh-rate electrochemical supercapacitors (UECs) with frequency response up to kilohertz (kHz) range are reported using light, thin, and flexible freestanding electrodes. The electrode is formed by perpendicularly edge oriented multilayer graphene/thin-graphite (EOG) sheets grown radially around individual fibers in carbonized cellulous paper (CCP), with cellulous carbonization and EOG deposition implemented in one step. The resulted ∼10 μm thick EOG/CCP electrode is light and flexible. The oriented porous structure of EOG with large surface area, in conjunction with high conductivity of the electrode, ensures ultrahigh-rate performance of the fabricated cells, with large areal capacitance of 0.59 mF cm-2 and 0.53 mF cm-2 and large phase angle of -83° and -80° at 120 Hz and 1 kHz, respectively. Particularly, the hierarchical EOG/CCP sheet structure allows multiple sheets stacked together for thick electrodes with almost linearly increased areal capacitance while maintaining the volumetric capacitance nearly no degradation, a critical merit for developing practical faraday-scale UECs. 3-layers of EOG/CCP electrode achieved an areal capacitance of 1.5 mF cm-2 and 1.4 mF cm-2 at 120 Hz and 1 kHz, respectively. This demonstration moves a step closer to the goal of bridging the frequency/capacitance gap between supercapacitors and electrolytic capacitors.

Micro supercapacitors based on a 3D structure with symmetric graphene or activated carbon electrodes

NASA Astrophysics Data System (ADS)

Li, Siwei; Wang, Xiaohong; Xing, Hexin; Shen, Caiwei

2013-11-01

This paper presents three-dimensional (3D) micro supercapacitors with thick interdigital electrodes supported and separated by SU-8. Nanoporous carbon materials including graphene and activated carbon (AC) are used as active materials in self-supporting composites to build the electrodes. The SU-8 separators provide mechanical support for thick electrodes and allow a considerable amount of material to be loaded in a limited footprint area. The prototypes have been accomplished by a simple microelectromechanical systems (MEMS) fabrication process and sealed by polydimethylsiloxane (PDMS) caps with ionic liquid electrolytes injected into the electrode area. Electrochemical tests demonstrate that the graphene-based prototype with 100 µm thick electrodes shows good power performance and provides a considerable specific capacitance of about 60 mF cm-2. Two AC-based prototypes show larger capacitance of 160 mF cm-2 and 311 mF cm-2 with 100 µm and 200 µm thick electrodes respectively, because of higher volume density of the material. The results demonstrate that both thick 3D electrode structure and volume capacitance of the electrode material are key factors for high-performance micro supercapacitors, which can be potentially used in specific applications such as power suppliers and storage components for harvesters.

High frequency measures of OHC nonlinear capacitance (NLC) and their significance: Why measures stray away from predictions

NASA Astrophysics Data System (ADS)

Santos-Sacchi, Joseph

2018-05-01

Measures of membrane capacitance (Cm) can be used to assess important characteristics of voltage-dependent membrane proteins (e.g., channels and transporters). In particular, a protein's time-dependent voltage-sensor charge movement is equivalently represented as a frequency-dependent component of Cm, telling much about the kinetics of the protein's conformational behavior. Recently, we have explored the frequency dependence of OHC voltage-dependent capacitance (aka nonlinear capacitance, NLC) to query rates of conformational switching within prestin (SLC26a5), the cell's lateral membrane molecular motor 1. Following removal of confounding stray capacitance effects, high frequency Cm measures using wide-band stimuli accurately reveal unexpected low pass behavior in prestin's molecular motions.

Equivalent distributed capacitance model of oxide traps on frequency dispersion of C-V curve for MOS capacitors

NASA Astrophysics Data System (ADS)

Lu, Han-Han; Xu, Jing-Ping; Liu, Lu; Lai, Pui-To; Tang, Wing-Man

2016-11-01

An equivalent distributed capacitance model is established by considering only the gate oxide-trap capacitance to explain the frequency dispersion in the C-V curve of MOS capacitors measured for a frequency range from 1 kHz to 1 MHz. The proposed model is based on the Fermi-Dirac statistics and the charging/discharging effects of the oxide traps induced by a small ac signal. The validity of the proposed model is confirmed by the good agreement between the simulated results and experimental data. Simulations indicate that the capacitance dispersion of an MOS capacitor under accumulation and near flatband is mainly caused by traps adjacent to the oxide/semiconductor interface, with negligible effects from the traps far from the interface, and the relevant distance from the interface at which the traps can still contribute to the gate capacitance is also discussed. In addition, by excluding the negligible effect of oxide-trap conductance, the model avoids the use of imaginary numbers and complex calculations, and thus is simple and intuitive. Project supported by the National Natural Science Foundation of China (Grant Nos. 61176100 and 61274112), the University Development Fund of the University of Hong Kong, China (Grant No. 00600009), and the Hong Kong Polytechnic University, China (Grant No. 1-ZVB1).

Voltage equalization of an ultracapacitor module by cell grouping using number partitioning algorithm

NASA Astrophysics Data System (ADS)

Oyarbide, E.; Bernal, C.; Molina, P.; Jiménez, L. A.; Gálvez, R.; Martínez, A.

2016-01-01

Ultracapacitors are low voltage devices and therefore, for practical applications, they need to be used in modules of series-connected cells. Because of the inherent manufacturing tolerance of the capacitance parameter of each cell, and as the maximum voltage value cannot be exceeded, the module requires inter-cell voltage equalization. If the intended application suffers repeated fast charging/discharging cycles, active equalization circuits must be rated to full power, and thus the module becomes expensive. Previous work shows that a series connection of several sets of paralleled ultracapacitors minimizes the dispersion of equivalent capacitance values, and also the voltage differences between capacitors. Thus the overall life expectancy is improved. This paper proposes a method to distribute ultracapacitors with a number partitioning-based strategy to reduce the dispersion between equivalent submodule capacitances. Thereafter, the total amount of stored energy and/or the life expectancy of the device can be considerably improved.

Detection of Electrocardiogram by Electrodes with Fabrics Using Capacitive Coupling

NASA Astrophysics Data System (ADS)

Ueno, Akinori; Furusawa, Yoichi; Hoshino, Hiroshi; Ishiyama, Yoji

This article reports on a novel technique for detecting electrocardiogram (ECG) at a condition where thin cloth is interpolated between sensing electrodes and the skin to which the electrodes are attached. The technique is based upon capacitive coupling composed of the electrode, the cloth and the skin, so that the electrode can lead alternating electrocardiographic current through capacitance of the coupling. The technique is also founded on impedance transforming circuit that has extremely high input impedance around 1000GΩ and low output impedance, so as to match high output impedance of the electrode to low input impedance required by subsequent circuitry. A pilot ECG measuring device was manufactured using the technique and experiments showed (1) ECG recordings using the device with silk of 240μm thickness or with cotton of 564μm thickness were quite similar to ECGs recorded from the skin using conventional system, (2) stable ECGs were observed with the silk below 600μm thickness or with the cotton below 1128μm thickness, (3) effects of long-term measurement and perspiration on ECG waveform were negligible. These results prove feasibility of the proposed technique for detecting ECG by electrodes with fabrics.

CHARACTERISTICS OF ANODIC AND CORROSION FILMS ON ZIRCONIUM

DOE Office of Scientific and Technical Information (OSTI.GOV)

Misch, R.D.

1960-05-01

Zirconium anodizes similarly to tungsten in respect to the change of interference colors with applied voltage. However, the oxide layer on tungsten cannot reach as great a thickness. Hafnium does not anodize in the same way as zirconium but is similar to tantalum. By measuring the interference color and capacitative thicknesses on zirconium (Grades I and III) and a 2.5 wt.% tin ailoy, the film was found to grow less rapidly in terms of capacitance than in terms of iaterference colors. This was interpreted to mean that cracks develop in the oxide as it thickens. The effect was most pronouncedmore » on Grade III zirconium and least pronounced on the tin alloy. The reduction in capacitative thickness was especially noticeable when white oxide appeared. Comparative measurements on Grade I zirconium and 2.5 wt.% tin alloy indicated that the thickness of the oxide film on the tin alloy (after 16 hours in water) increased more rapidly with temperature than the film on zirconium. Tin is believed to act in ways to counteract the tendency of the oxide to form cracks, and to produce vacancies which promote ionic diffusion. (auth)« less

Electrochemical double layers at the interface between glassy electrolytes and platinum: Differentiating between the anode and the cathode capacitance

NASA Astrophysics Data System (ADS)

Kruempelmann, J.; Mariappan, C. R.; Schober, C.; Roling, B.

2010-12-01

We have measured potential-dependent interfacial capacitances of two Na-Ca-phosphosilicate glasses and of an AgI-doped silver borate glass between ion-blocking Pt electrodes. An asymmetric electrode configuration with highly dissimilar electrode areas on both faces of the glass samples allowed us to determine the capacitance at the small-area electrode. Using equivalent circuit fitting we extract potential-dependent double-layer capacitances. The potential-dependent anodic capacitance exhibits a weak maximum and drops strongly at higher potentials. The cathodic capacitance exhibits a more pronounced maximum, this maximum being responsible for the maximum in the total capacitance observed in measurements in a symmetrical electrode configuration. The capacitance maxima of the Na-Ca phosphosilicate glasses show up at higher electrode potentials than the maxima of the AgI-doped silver borate glass. Remarkably, for both types of glasses, the potential of the cathodic capacitance maximum is closely related to the activation energy of the bulk ion transport. We compare our results to recent theoretical predictions by Shklovskii and co-workers.

Noise effect on performance of IR PVDF pyroelectric detector

NASA Astrophysics Data System (ADS)

Abdullah, K. Al; Batal, M. Anwar; Hamdan, Rawad; Khalil, Toni; Salame, Chafic

2018-05-01

The spin-casting and casting technology were used to make IR pyroelectric PVDF detectors, where the operational amplifier, TC75S63TU, is used to amplify pyroelectrical signal. The pyroelectric coefficient is measured by charge integration method, which is 23 µC/m2K. The voltage responsivity and noise equivalent power depending on the dielectric constant, specific conductivity and loss tangent, which are measured at various frequencies, is estimated where changing of detector capacitance and resistor with frequency is taken into account. Maximum voltage responsivity was for detector thickness d=116.05 µm at chopping frequency (f=0.8Hz). Influence of thermal, Johnson and amplifier noises on output voltage are studied. At frequencies (<1kHz), Johnson noise dominates whereas at frequencies (>1kHz), amplifier voltage noise dominates. The thinner detector, the lower noise affects on output voltage. The optimal signal to noise ratio (SNR) of pyroelectrical detector is for thickness d=30.1 µm at frequency f=20Hz. The reducing electrode area decreases slightly total noise at low frequency and enhances slightly SNR of pyroelectrical detector.

Response of capacitive micromachined ultrasonic transducers

NASA Astrophysics Data System (ADS)

Ge, Lifeng

2008-10-01

Capacitive micromachined ultrasonic transducers (CMUTs) have been developed for airborne ultrasonic applications, acoustic imaging, and chemical and biological detections. Much attention is also paid how to optimize their performance, so that the accurate simulation of the transmitting response of the CMUTs becomes extremely significant. This paper focuses on determining the total input mechanical impedance accountings for damping, and its resistance part is obtained by the calculated natural frequency and equivalent lumped parameters, and the typical 3-dB bandwidth. Thus, the transmitting response can be calculated by using the input mechanical impedance. Moreover, the equivalent electrical circuit can be also established by the determined lumped parameters.

Energy awareness for supercapacitors using Kalman filter state-of-charge tracking

NASA Astrophysics Data System (ADS)

Nadeau, Andrew; Hassanalieragh, Moeen; Sharma, Gaurav; Soyata, Tolga

2015-11-01

Among energy buffering alternatives, supercapacitors can provide unmatched efficiency and durability. Additionally, the direct relation between a supercapacitor's terminal voltage and stored energy can improve energy awareness. However, a simple capacitive approximation cannot adequately represent the stored energy in a supercapacitor. It is shown that the three branch equivalent circuit model provides more accurate energy awareness. This equivalent circuit uses three capacitances and associated resistances to represent the supercapacitor's internal SOC (state-of-charge). However, the SOC cannot be determined from one observation of the terminal voltage, and must be tracked over time using inexact measurements. We present: 1) a Kalman filtering solution for tracking the SOC; 2) an on-line system identification procedure to efficiently estimate the equivalent circuit's parameters; and 3) experimental validation of both parameter estimation and SOC tracking for 5 F, 10 F, 50 F, and 350 F supercapacitors. Validation is done within the operating range of a solar powered application and the associated power variability due to energy harvesting. The proposed techniques are benchmarked against the simple capacitive model and prior parameter estimation techniques, and provide a 67% reduction in root-mean-square error for predicting usable buffered energy.

Magnetoimpedance behavior and its equivalent circuit analysis of Co/Cu/Co/Py pseudo-spin-valve with a nano-oxide layer

NASA Astrophysics Data System (ADS)

Chien, Wei-Chih; Yao, Yeong-Der; Wu, Jiann-Kuo; Lo, Chi-Kuen; Hung, Ruei-Feng; Lan, M. D.; Lin, Pang

2009-02-01

Magnetoimpedance behaviors and thermal effects of a Co/Cu/Co/Py pseudo-spin-valve (PSV) with a nano-oxide layer (NOL) were studied. The PSV can be regarded as a combination of resistances, inductances, and capacitances. In addition, equivalent circuit theory can be used to analyze the ac behavior of this system. The imaginary part of the magnetoimpedance (magnetoreactance) ratio is more than 1700% at the resonance frequency (fr)=476 kHz at room temperature (RT). The dc magnetoresistance (MR) ratio decreases as the annealing temperature increases because the NOL is formed at the interface between the spacer and the magnetic layer. The NOL deteriorates the differential spin scattering and reduces the dc MR ratio. Impedance spectroscopy was utilized to analyze the capacitance effect from NOL after annealing. The effective capacitance of the PSV was 21.8 nF at RT and changed to 11.8 nF after annealing at 200 °C. The useful equivalent capacitor circuit not only is a nondestructive measurement technology but can also explain the experimental results and prove the formation of the NOL.

Capacitance of carbon-based electrical double-layer capacitors.

PubMed

Ji, Hengxing; Zhao, Xin; Qiao, Zhenhua; Jung, Jeil; Zhu, Yanwu; Lu, Yalin; Zhang, Li Li; MacDonald, Allan H; Ruoff, Rodney S

2014-01-01

Experimental electrical double-layer capacitances of porous carbon electrodes fall below ideal values, thus limiting the practical energy densities of carbon-based electrical double-layer capacitors. Here we investigate the origin of this behaviour by measuring the electrical double-layer capacitance in one to five-layer graphene. We find that the capacitances are suppressed near neutrality, and are anomalously enhanced for thicknesses below a few layers. We attribute the first effect to quantum capacitance effects near the point of zero charge, and the second to correlations between electrons in the graphene sheet and ions in the electrolyte. The large capacitance values imply gravimetric energy storage densities in the single-layer graphene limit that are comparable to those of batteries. We anticipate that these results shed light on developing new theoretical models in understanding the electrical double-layer capacitance of carbon electrodes, and on opening up new strategies for improving the energy density of carbon-based capacitors.

Programmable Low-Power Low-Noise Capacitance to Voltage Converter for MEMS Accelerometers

PubMed Central

Royo, Guillermo; Sánchez-Azqueta, Carlos; Gimeno, Cecilia; Aldea, Concepción; Celma, Santiago

2016-01-01

In this work, we present a capacitance-to-voltage converter (CVC) for capacitive accelerometers based on microelectromechanical systems (MEMS). Based on a fully-differential transimpedance amplifier (TIA), it features a 34-dB transimpedance gain control and over one decade programmable bandwidth, from 75 kHz to 1.2 MHz. The TIA is aimed for low-cost low-power capacitive sensor applications. It has been designed in a standard 0.18-μm CMOS technology and its power consumption is only 54 μW. At the maximum transimpedance configuration, the TIA shows an equivalent input noise of 42 fA/Hz at 50 kHz, which corresponds to 100 μg/Hz. PMID:28042830

Programmable Low-Power Low-Noise Capacitance to Voltage Converter for MEMS Accelerometers.

PubMed

Royo, Guillermo; Sánchez-Azqueta, Carlos; Gimeno, Cecilia; Aldea, Concepción; Celma, Santiago

2016-12-30

In this work, we present a capacitance-to-voltage converter (CVC) for capacitive accelerometers based on microelectromechanical systems (MEMS). Based on a fully-differential transimpedance amplifier (TIA), it features a 34-dB transimpedance gain control and over one decade programmable bandwidth, from 75 kHz to 1.2 MHz. The TIA is aimed for low-cost low-power capacitive sensor applications. It has been designed in a standard 0.18-μm CMOS technology and its power consumption is only 54 μW. At the maximum transimpedance configuration, the TIA shows an equivalent input noise of 42 fA/ Hz at 50 kHz, which corresponds to 100 μg/ Hz .

Formula of an ideal carbon nanomaterial supercapacitor

NASA Astrophysics Data System (ADS)

Samuilova, Larissa; Frenkel, Alexander; Samuilov, Vladimir

2014-03-01

Supercapacitors exhibit great potential as high-performance energy sources for a large variety of potential applications, ranging from consumer electronics through wearable optoelectronics to hybrid electric vehicles. We focuse on carbon nanomaterials, especially carbon nanotube films, 3-D graphene, graphene oxide due to their high specific surface area, excellent electrical and mechanical properties. We have developed a simple approach to lower the equivalent series resistance by fabricating electrodes of arbitrary thickness using carbon nanotube films and reduced graphene oxide based composites. Besides of the problem of increasing of the capacitance, the minimization of the loss tangent (dissipation factor) is marginal for the future development of the supercapacitors. This means, not only a very well developed surface area of the electrodes, but the role of the good quality of the porous separator and the electrolyte are important. We address these factors as well.

Fully integrated low-noise readout circuit with automatic offset cancellation loop for capacitive microsensors.

PubMed

Song, Haryong; Park, Yunjong; Kim, Hyungseup; Cho, Dong-Il Dan; Ko, Hyoungho

2015-10-14

Capacitive sensing schemes are widely used for various microsensors; however, such microsensors suffer from severe parasitic capacitance problems. This paper presents a fully integrated low-noise readout circuit with automatic offset cancellation loop (AOCL) for capacitive microsensors. The output offsets of the capacitive sensing chain due to the parasitic capacitances and process variations are automatically removed using AOCL. The AOCL generates electrically equivalent offset capacitance and enables charge-domain fine calibration using a 10-bit R-2R digital-to-analog converter, charge-transfer switches, and a charge-storing capacitor. The AOCL cancels the unwanted offset by binary-search algorithm based on 10-bit successive approximation register (SAR) logic. The chip is implemented using 0.18 μm complementary metal-oxide-semiconductor (CMOS) process with an active area of 1.76 mm². The power consumption is 220 μW with 3.3 V supply. The input parasitic capacitances within the range of -250 fF to 250 fF can be cancelled out automatically, and the required calibration time is lower than 10 ms.

Fully Integrated Low-Noise Readout Circuit with Automatic Offset Cancellation Loop for Capacitive Microsensors

PubMed Central

Song, Haryong; Park, Yunjong; Kim, Hyungseup; Cho, Dong-il Dan; Ko, Hyoungho

2015-01-01

Capacitive sensing schemes are widely used for various microsensors; however, such microsensors suffer from severe parasitic capacitance problems. This paper presents a fully integrated low-noise readout circuit with automatic offset cancellation loop (AOCL) for capacitive microsensors. The output offsets of the capacitive sensing chain due to the parasitic capacitances and process variations are automatically removed using AOCL. The AOCL generates electrically equivalent offset capacitance and enables charge-domain fine calibration using a 10-bit R-2R digital-to-analog converter, charge-transfer switches, and a charge-storing capacitor. The AOCL cancels the unwanted offset by binary-search algorithm based on 10-bit successive approximation register (SAR) logic. The chip is implemented using 0.18 μm complementary metal-oxide-semiconductor (CMOS) process with an active area of 1.76 mm2. The power consumption is 220 μW with 3.3 V supply. The input parasitic capacitances within the range of −250 fF to 250 fF can be cancelled out automatically, and the required calibration time is lower than 10 ms. PMID:26473877

Facile and environmentally friendly synthesis of ultrathin nickel hydroxide nanosheets with excellent supercapacitor performances

NASA Astrophysics Data System (ADS)

Hu, Xiaowei; Liu, Sheng; Li, Chenghui; Huang, Jiahao; Luv, Jixing; Xu, Pan; Liu, Jian; You, Xiao-Zeng

2016-06-01

In this article, we report a facile and environmentally friendly glutamic acid-assisted hydrothermal strategy for the preparation of ultrathin two-dimensional (2D) β-Ni(OH)2 nanosheets with a thickness of about 2 nm, which exhibit a maximum specific capacitance of 2537.4 F g-1 at a current density of 1 A g-1, even at 10 A g-1, the specific capacitance is still maintained at 2290.0 F g-1 with 77.6% retention after 3000 cycles.In this article, we report a facile and environmentally friendly glutamic acid-assisted hydrothermal strategy for the preparation of ultrathin two-dimensional (2D) β-Ni(OH)2 nanosheets with a thickness of about 2 nm, which exhibit a maximum specific capacitance of 2537.4 F g-1 at a current density of 1 A g-1, even at 10 A g-1, the specific capacitance is still maintained at 2290.0 F g-1 with 77.6% retention after 3000 cycles. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr02912d

Semiconductor particles in bilayer lipid membranes. Formation, characterization, and photoelectrochemistry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, X.K.; Baral, S.B.; Rolandi, R.

Bilayer lipid membranes (BLMs) have been formed from bovine brain phosphatidylserine (PS), glyceryl monooleate (GMO), and a ploymerizable surfactant, (n-C/sub 15/H/sub 31/CO/sub 2/(CH/sub 2/))/sub 2/N/sup +/(CH/sub 3/)CH/sub 2/C/sub 6/H/sub 4/CH==CH/sub 2/Cl/sup -/(STYRS). These BLMs were then used to provide matrices for the in situ generation of microcrystalline CdS, CuS, Cu/sub 2/S, PbS, ZnS, HgS, and In/sub 2/S/sub 3/. Semiconductors were formed by injecting appropriate metal ion precursors and H/sub 2/S into the bathing solutions on opposite sides of the BLM. Their presence was established by voltage-dependent capacitance measurements, absorption spectroscopy, and optical microscopy. Subsequent to the injection of H/sub 2/S,more » the first observable change was the appearance of fairly uniform white dots on the black film. These dots rapidly moved around and grew in size, forming islands that then merged with themselves and with a second generation of dots, which ultimately led to a continuous film that continued to grow in thickness. Film formation and growth were monitored by simultaneous optical thickness and capacitance measurements. These data were treated in terms of an equivalent R-C circuit and allowed for the assessment of the semiconductor penetration depth into the BLM. This value for a GMO-BLM-supported In/sub 2/S/sub 3/ film was determined to be 24 A. Bandgap excitation, by nanosecond-pulsed or continuous illumination of the BLM-supported semiconductor film, led to observable photoelectric effects. Visible light (lambda > 350 nm) excitation into STYRS-BLM-supported CdS led to polymerization of the styrene moiety of STYRS. BLM-supported semiconductors remained stable for days.« less

Diagnostic of capacitively coupled radio frequency plasma from electrical discharge characteristics: comparison with optical emission spectroscopy and fluid model simulation

NASA Astrophysics Data System (ADS)

Xiang, HE; Chong, LIU; Yachun, ZHANG; Jianping, CHEN; Yudong, CHEN; Xiaojun, ZENG; Bingyan, CHEN; Jiaxin, PANG; Yibing, WANG

2018-02-01

The capacitively coupled radio frequency (CCRF) plasma has been widely used in various fields. In some cases, it requires us to estimate the range of key plasma parameters simpler and quicker in order to understand the behavior in plasma. In this paper, a glass vacuum chamber and a pair of plate electrodes were designed and fabricated, using 13.56 MHz radio frequency (RF) discharge technology to ionize the working gas of Ar. This discharge was mathematically described with equivalent circuit model. The discharge voltage and current of the plasma were measured at different pressures and different powers. Based on the capacitively coupled homogeneous discharge model, the equivalent circuit and the analytical formula were established. The plasma density and temperature were calculated by using the equivalent impedance principle and energy balance equation. The experimental results show that when RF discharge power is 50-300 W and pressure is 25-250 Pa, the average electron temperature is about 1.7-2.1 eV and the average electron density is about 0.5 × 1017-3.6 × 1017 m-3. Agreement was found when the results were compared to those given by optical emission spectroscopy and COMSOL simulation.

Capacitive sensing of droplets for microfluidic devices based on thermocapillary actuation.

PubMed

Chen, Jian Z; Darhuber, Anton A; Troian, Sandra M; Wagner, Sigurd

2004-10-01

The design and performance of a miniaturized coplanar capacitive sensor is presented whose electrode arrays can also function as resistive microheaters for thermocapillary actuation of liquid films and droplets. Optimal compromise between large capacitive signal and high spatial resolution is obtained for electrode widths comparable to the liquid film thickness measured, in agreement with supporting numerical simulations which include mutual capacitance effects. An interdigitated, variable width design, allowing for wider central electrodes, increases the capacitive signal for liquid structures with non-uniform height profiles. The capacitive resolution and time response of the current design is approximately 0.03 pF and 10 ms, respectively, which makes possible a number of sensing functions for nanoliter droplets. These include detection of droplet position, size, composition or percentage water uptake for hygroscopic liquids. Its rapid response time allows measurements of the rate of mass loss in evaporating droplets.

Redox regulation of mammalian sperm capacitation

PubMed Central

O’Flaherty, Cristian

2015-01-01

Capacitation is a series of morphological and metabolic changes necessary for the spermatozoon to achieve fertilizing ability. One of the earlier happenings during mammalian sperm capacitation is the production of reactive oxygen species (ROS) that will trigger and regulate a series of events including protein phosphorylation, in a time-dependent fashion. The identity of the sperm oxidase responsible for the production of ROS involved in capacitation is still elusive, and several candidates are discussed in this review. Interestingly, ROS-induced ROS formation has been described during human sperm capacitation. Redox signaling during capacitation is associated with changes in thiol groups of proteins located on the plasma membrane and subcellular compartments of the spermatozoon. Both, oxidation of thiols forming disulfide bridges and the increase on thiol content are necessary to regulate different sperm proteins associated with capacitation. Reducing equivalents such as NADH and NADPH are necessary to support capacitation in many species including humans. Lactate dehydrogenase, glucose-6-phospohate dehydrogenase, and isocitrate dehydrogenase are responsible in supplying NAD (P) H for sperm capacitation. Peroxiredoxins (PRDXs) are newly described enzymes with antioxidant properties that can protect mammalian spermatozoa; however, they are also candidates for assuring the regulation of redox signaling required for sperm capacitation. The dysregulation of PRDXs and of enzymes needed for their reactivation such as thioredoxin/thioredoxin reductase system and glutathione-S-transferases impairs sperm motility, capacitation, and promotes DNA damage in spermatozoa leading to male infertility. PMID:25926608

The Chemical Capacitance as a Fingerprint of Defect Chemistry in Mixed Conducting Oxides.

PubMed

Fleig, Juergen; Schmid, Alexander; Rupp, Ghislain M; Slouka, Christoph; Navickas, Edvinas; Andrejs, Lukas; Hutter, Herbert; Volgger, Lukas; Nenning, Andreas

2016-01-01

The oxygen stoichiometry of mixed conducting oxides depends on the oxygen chemical potential and thus on the oxygen partial pressure in the gas phase. Also voltages may change the local oxygen stoichiometry and the amount to which such changes take place is quantified by the chemical capacitance of the sample. Impedance spectroscopy can be used to probe this chemical capacitance. Impedance measurements on different oxides ((La,Sr)FeO3-δ = LSF, Sr(Ti,Fe)O3-δ = STF, and Pb(Zr,Ti)O3 = PZT) are presented, and demonstrate how the chemical capacitance may affect impedance spectra in different types of electrochemical cells. A quantitative analysis of the spectra is based on generalized equivalent circuits developed for mixed conducting oxides by J. Jamnik and J. Maier. It is discussed how defect chemical information can be deduced from the chemical capacitance.

Electrical Characterization of Semiconductor and Dielectric Materials with a Non-Damaging FastGateTM Probe

NASA Astrophysics Data System (ADS)

Robert, Hillard; William, Howland; Bryan, Snyder

2002-03-01

Determination of the electrical properties of semiconductor materials and dielectrics is highly desirable since these correlate best to final device performance. The properties of SiO2 and high k dielectrics such as Equivalent Oxide Thickness(EOT), Interface Trap Density(Dit), Oxide Effective Charge(Neff), Flatband Voltage Hysteresis(Delta Vfb), Threshold Voltage(VT) and, bulk properties such as carrier density profile and channel dose are all important parameters that require monitoring during front end processing. Conventional methods for determining these parameters involve the manufacturing of polysilicon or metal gate MOS capacitors and subsequent measurements of capacitance-voltage(CV) and/or current-voltage(IV). These conventional techniques are time consuming and can introduce changes to the materials being monitored. Also, equivalent circuit effects resulting from excessive leakage current, series resistance and stray inductance can introduce large errors in the measured results. In this paper, a new method is discussed that provides rapid determination of these critical parameters and is robust against equivalent circuit errors. This technique uses a small diameter(30 micron), elastically deformed probe to form a gate for MOSCAP CV and IV and can be used to measure either monitor wafers or test areas within scribe lines on product wafers. It allows for measurements of dielectrics thinner than 10 Angstroms. A detailed description and applications such as high k dielectrics, will be presented.

Combined analysis of energy band diagram and equivalent circuit on nanocrystal solid

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kano, Shinya, E-mail: kano@eedept.kobe-u.ac.jp, E-mail: fujii@eedept.kobe-u.ac.jp; Sasaki, Masato; Fujii, Minoru, E-mail: kano@eedept.kobe-u.ac.jp, E-mail: fujii@eedept.kobe-u.ac.jp

We investigate a combined analysis of an energy band diagram and an equivalent circuit on nanocrystal (NC) solids. We prepared a flat silicon-NC solid in order to carry out the analysis. An energy band diagram of a NC solid is determined from DC transport properties. Current-voltage characteristics, photocurrent measurements, and conductive atomic force microscopy images indicate that a tunneling transport through a NC solid is dominant. Impedance spectroscopy gives an equivalent circuit: a series of parallel resistor-capacitors corresponding to NC/metal and NC/NC interfaces. The equivalent circuit also provides an evidence that the NC/NC interface mainly dominates the carrier transport throughmore » NC solids. Tunneling barriers inside a NC solid can be taken into account in a combined capacitance. Evaluated circuit parameters coincide with simple geometrical models of capacitances. As a result, impedance spectroscopy is also a useful technique to analyze semiconductor NC solids as well as usual DC transport. The analyses provide indispensable information to implement NC solids into actual electronic devices.« less

Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation

NASA Astrophysics Data System (ADS)

Li, Xue-Fei; Liu, Xiao-Jie; Cao, Yan-Qiang; Li, Ai-Dong; Li, Hui; Wu, Di

2013-01-01

We report the characteristics of HfO2 films deposited on Ge substrates with and without La2O3 passivation at 250 °C by atomic layer deposition (ALD) using La[N(SiMe3)2]3 and Hf[N(CH3)(C2H5)]4 as the precursors. The HfO2 is observed to form defective HfGeOx at its interface during 500 °C postdeposition annealing. The insertion of an ultrathin La2O3 interfacial passivation layer effectively prevents the Ge outdiffusion and improves interfacial and electrical properties. Capacitance equivalent thickness (CET) of 1.35 nm with leakage current density JA of 8.3 × 10-4 A/cm2 at Vg = 1 V is achieved for the HfO2/La2O3 gate stacks on Ge substrates.

A Self-Aligned InGaAs Quantum-Well Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated through a Lift-Off-Free Front-End Process

NASA Astrophysics Data System (ADS)

Lin, Jianqiang; Kim, Tae-Woo; Antoniadis, Dimitri A.; del Alamo, Jesús A.

2012-06-01

We present a novel n-type InGaAs quantum-well metal-oxide-semiconductor field-effect transistor (QW-MOSFET) fabricated by a self-aligned gate-last process and investigate relevant Si-like manufacturing issues in future III-V MOSFETs. The device structure features a composite InP/Al2O3 gate barrier with a capacitance equivalent thickness (CET) of 3 nm and non alloyed Mo ohmic contacts. We have found that RIE introduces significant damage to the intrinsic device resulting in poor current drive and subthreshold swing. The effect is largely removed through a thermal annealing step. Thermally annealed QW-MOSFETs exhibit a subthreshold swing of 95 mV/dec, indicative of excellent interfacial characteristics. The peak mobility of the MOSFET is 2780 cm2 V-1 s-1.

MnO2-Based Electrochemical Supercapacitors on Flexible Carbon Substrates

NASA Astrophysics Data System (ADS)

Tadjer, Marko J.; Mastro, Michael A.; Rojo, José M.; Mojena, Alberto Boscá; Calle, Fernando; Kub, Francis J.; Eddy, Charles R.

2014-04-01

Manganese dioxide films were grown on large area flexible carbon aerogel substrates. Characterization by x-ray diffraction confirmed α-MnO2 growth. Three types of films were compared as a function of hexamethylenetetramine (HMTA) concentration during growth. The highest concentration of HM TA produced MnO2 flower-like films, as observed by scanning electron microscopy, whose thickness and surface coverage lead to both a higher specific capacitance and higher series resistance. Specific capacitance was measured to be 64 F/g using a galvanostatic setup, compared to the 47 F/g-specific capacitance of the carbon aerogel substrate. Such supercapacitor devices can be fabricated on large area sheets of carbon aerogel to achieve high total capacitance.

Resonance-induced sensitivity enhancement method for conductivity sensors

NASA Technical Reports Server (NTRS)

Tai, Yu-Chong (Inventor); Shih, Chi-yuan (Inventor); Li, Wei (Inventor); Zheng, Siyang (Inventor)

2009-01-01

Methods and systems for improving the sensitivity of a variety of conductivity sensing devices, in particular capacitively-coupled contactless conductivity detectors. A parallel inductor is added to the conductivity sensor. The sensor with the parallel inductor is operated at a resonant frequency of the equivalent circuit model. At the resonant frequency, parasitic capacitances that are either in series or in parallel with the conductance (and possibly a series resistance) is substantially removed from the equivalent circuit, leaving a purely resistive impedance. An appreciably higher sensor sensitivity results. Experimental verification shows that sensitivity improvements of the order of 10,000-fold are possible. Examples of detecting particulates with high precision by application of the apparatus and methods of operation are described.

Fabricating capacitive micromachined ultrasonic transducers with a novel silicon-nitride-based wafer bonding process.

PubMed

Logan, Andrew; Yeow, John T W

2009-05-01

We report the fabrication and experimental testing of 1-D 23-element capacitive micromachined ultrasonic transducer (CMUT) arrays that have been fabricated using a novel wafer-bonding process whereby the membrane and the insulation layer are both silicon nitride. The membrane and cell cavities are deposited and patterned on separate wafers and fusion-bonded in a vacuum environment to create CMUT cells. A user-grown silicon-nitride membrane layer avoids the need for expensive silicon-on-insulator (SOI) wafers, reduces parasitic capacitance, and reduces dielectric charging. It allows more freedom in selecting the membrane thickness while also providing the benefits of wafer-bonding fabrication such as excellent fill factor, ease of vacuum sealing, and a simplified fabrication process when compared with the more standard sacrificial release process. The devices fabricated have a cell diameter of 22 microm, a membrane thickness of 400 nm, a gap depth of 150 nm, and an insulation thickness of 250 nm. The resonant frequency of the CMUT in air is 17 MHz and has an attenuation compensated center frequency of approximately 9 MHz in immersion with a -6 dB fractional bandwidth of 123%. This paper presents the fabrication process and some characterization results.

ac impedance analysis of a Ni-Nb-Zr-H glassy alloy with femtofarad capacitance tunnels

NASA Astrophysics Data System (ADS)

Fukuhara, M.; Seto, M.; Inoue, A.

2010-01-01

A Nyquist diagram of a (Ni0.36Nb0.24Zr0.40)90H10 glassy alloy shows a semitrue circle, indicating that it is a conducting material with a total capacitance of 17.8 μF. The Bode plots showing the dependencies of its real and imaginary impedances, and phase on frequency suggest a simpler equivalent circuit having a resistor in parallel with a capacitor. Dividing the total capacitance (17.8 μF) by the capacitance of a single tunnel (0.9 fF), we deduced that this material has a high number of dielectric tunnels, which can be regarded as regular prisms separated from the electric-conducting distorted icosahedral Zr5Ni5Nb3 clusters by an average of 0.225 nm.

Humidity and illumination organic semiconductor copper phthalocyanine sensor for environmental monitoring.

PubMed

Karimov, K S; Qazi, I; Khan, T A; Draper, P H; Khalid, F A; Mahroof-Tahir, M

2008-06-01

In this investigation properties of organic semiconductor copper phthalocyanine (CuPc) capacitive humidity and illumination sensors were studied. Organic thin film was deposited by vacuum evaporation on a glass substrate with silver surface-type electrodes to form the Ag/CuPc/Ag sensor. The capacitance of the samples was evaluated at room temperature in the relative humidity range of 35-92%. It was observed that capacitance of the Ag/CuPc/Ag sensor increases with increase in humidity. The ratio of the relative capacitance to relative humidity was about 200. It is assumed that in general the capacitive response of the sensor is associated with polarization due to absorption of water molecules and transfer of charges (electrons and holes). It was observed that under filament lamp illumination of up to 1,000 lx the capacitance of the Ag/CuPc/Ag photo capacitive detectors increased continuously by 20% as compared to dark condition. It is assumed that photo capacitive response of the sensor is associated with polarization due to transfer of photo-generated electrons and holes. An equivalent circuit of the Ag/CuPc/Ag capacitive humidity and illumination sensor was developed. Humidity and illumination dependent capacitance properties of this sensor make it attractive for use in humidity and illumination multi-meters. The sensor may be used in instruments for environmental monitoring of humidity and illumination.

Electrodeposition and Capacitive Behavior of Films for Electrodes of Electrochemical Supercapacitors

NASA Astrophysics Data System (ADS)

Shi, C.; Zhitomirsky, I.

2010-03-01

Polypyrrole films were deposited by anodic electropolymerization on stainless steel substrates from aqueous pyrrole solutions containing sodium salicylate and tiron additives. The deposition yield was studied under galvanostatic conditions. The amount of the deposited material was varied by the variation of deposition time at a constant current density. SEM studies showed the formation of porous films with thicknesses in the range of 0-3 μm. Cyclic voltammetry data for the films tested in 0.5 M Na2SO4 solutions showed capacitive behavior and high specific capacitance (SC) in a voltage window of 0.9 V. The films prepared from pyrrole solutions containing tiron showed better capacitive behavior compared to the films prepared from the solutions containing sodium salicylate. A highest SC of 254 F g-1 was observed for the sample with a specific mass of 89 μg cm-2 at a scan rate of 2 mV s-1. The SC decreased with an increasing film thickness and scan rate. The results indicated that the polypyrrole films deposited on the stainless steel substrates by anodic electropolymerization can be used as electrodes for electrochemical supercapacitors (ES).

Electrodeposition and capacitive behavior of films for electrodes of electrochemical supercapacitors.

PubMed

Shi, C; Zhitomirsky, I

2010-01-08

Polypyrrole films were deposited by anodic electropolymerization on stainless steel substrates from aqueous pyrrole solutions containing sodium salicylate and tiron additives. The deposition yield was studied under galvanostatic conditions. The amount of the deposited material was varied by the variation of deposition time at a constant current density. SEM studies showed the formation of porous films with thicknesses in the range of 0-3 μm. Cyclic voltammetry data for the films tested in 0.5 M Na2SO4 solutions showed capacitive behavior and high specific capacitance (SC) in a voltage window of 0.9 V. The films prepared from pyrrole solutions containing tiron showed better capacitive behavior compared to the films prepared from the solutions containing sodium salicylate. A highest SC of 254 F g-1 was observed for the sample with a specific mass of 89 μg cm-2 at a scan rate of 2 mV s-1. The SC decreased with an increasing film thickness and scan rate. The results indicated that the polypyrrole films deposited on the stainless steel substrates by anodic electropolymerization can be used as electrodes for electrochemical supercapacitors (ES).

Study of the capacitance technique for measuring high-temperature blade tip clearance on ceramic rotors

NASA Technical Reports Server (NTRS)

Barranger, John P.

1993-01-01

Higher operating temperatures required for increased engine efficiency can be achieved by using ceramic materials for engine components. Ceramic turbine rotors are subject to the same limitations with regard to gas path efficiency as their superalloy predecessors. In this study, a modified frequency-modulation system is proposed for the measurement of blade tip clearance on ceramic rotors. It is expected to operate up to 1370 C (2500 F), the working temperature of present engines with ceramic turbine rotors. The design of the system addresses two special problems associated with nonmetallic blades: the capacitance is less than that of a metal blade and the effects of temperature may introduce uncertainty with regard to the blade tip material composition. To increase capacitance and stabilize the measurement, a small portion of the rotor is modified by the application of 5-micron-thick platinum films. The platinum surfaces on the probe electrodes and rotor that are exposed to the high-velocity gas stream are coated with an additional 10-micron-thick protective ceramic topcoat. A finite-element method is applied to calculate the capacitance as a function of clearance.

Nano-structured variable capacitor based on P(VDF-TrFE) copolymer and carbon nanotubes

NASA Astrophysics Data System (ADS)

Lakbita, I.; El-Hami, K.

2018-02-01

A newly organic capacitor was conceived with a variable capacitance using the inverse piezoelectric effect. The device consists of two parallel plates of carbon nanotubes (CNTs), known for their large surface area, high sensitivity and high electric conductivity, separated by a thin film of a dielectric layer of Polyinylidene fluoride and trifluoroehtylene (P(VDF-TrFE)) promising material for piezoelectric and ferroelectric properties. The obtained architecture is the CNT/PVDF-TrFE/CNT capacitor device. In this study, an ultra-thin film of P(VDF-TrFE) (54/46) with thickness of 20 nm was elaborated on highly oriented pyrolytic graphite (HOPG) by spin-coating. The morphology of the ultra-thin film and the mechanical behavior of CNT/P(VDF-TrFE)/CNT system were studied using the atomic force microscopy (AFM) combined with a lock-in amplifier in contact mode. All changes in applied voltage induce a change in thin film thickness according to the inverse piezoelectric effect that affect, consequently the capacitance. The results showed that the ratio of capacitance change ΔC to initial capacitance C0 is ΔC/C0=5%. This value is sufficient to use P(VDF-TrFE) as variable organic capacitor.

Electrodeposition and Capacitive Behavior of Films for Electrodes of Electrochemical Supercapacitors

PubMed Central

2010-01-01

Polypyrrole films were deposited by anodic electropolymerization on stainless steel substrates from aqueous pyrrole solutions containing sodium salicylate and tiron additives. The deposition yield was studied under galvanostatic conditions. The amount of the deposited material was varied by the variation of deposition time at a constant current density. SEM studies showed the formation of porous films with thicknesses in the range of 0–3 μm. Cyclic voltammetry data for the films tested in 0.5 M Na2SO4 solutions showed capacitive behavior and high specific capacitance (SC) in a voltage window of 0.9 V. The films prepared from pyrrole solutions containing tiron showed better capacitive behavior compared to the films prepared from the solutions containing sodium salicylate. A highest SC of 254 F g−1 was observed for the sample with a specific mass of 89 μg cm−2 at a scan rate of 2 mV s−1. The SC decreased with an increasing film thickness and scan rate. The results indicated that the polypyrrole films deposited on the stainless steel substrates by anodic electropolymerization can be used as electrodes for electrochemical supercapacitors (ES). PMID:20672082

In-Plane Impedance Spectroscopy measurements in Vanadium Dioxide thin films

NASA Astrophysics Data System (ADS)

Ramirez, Juan; Patino, Edgar; Schmidt, Rainer; Sharoni, Amos; Gomez, Maria; Schuller, Ivan

2012-02-01

In plane Impedance Spectroscopy measurements have been done in Vanadium Dioxide thin films in the range of 100 Hz to 1 MHz. Our measurements allows distinguishing between the resistive and capacitive response of the Vanadium Dioxide films across the metal-insulator transition. A non ideal RC behavior was found in our thin films from room temperature up to 334 K. Around the MIT, an increase of the total capacitance is observed. A capacitor-network model is able to reproduce the capacitance changes across the MIT. Above the MIT, the system behaves like a metal as expected, and a modified equivalent circuit is necessary to describe the impedance data adequately.

Superconductivity for Electromagnetic Guns

DTIC Science & Technology

1984-03-01

greater than that for a pulsed homopolar machine when the time constant is less than 0.1 sec (ref 32) (See fig. 18). Since the energy density in a...transferred from the capacitor to the induct- or. If the capacitor is replaced by a homopolar machine, then, as is well-known, the kinetic energy of the...rotor plays the role of an "electrical" capacitance and the two arrangements (capacitance and homopolar ) are functionally equivalent. Group 3. In

Near millimeter wave bandpass filters

NASA Technical Reports Server (NTRS)

Timusk, T.; Richards, P. L.

1981-01-01

The properties of bandpass filters for broadband photometry are reported in the 3-12/cm frequency range. The filters are based on a combination of capacitive grids deposited on thick Mylar substrates and are designed to have very high out-of-band rejection. Low frequencies are blocked by a thick grill that consists of a hexagonal grid of circular holes in a thick metal plate.

An on-line calibration technique for improved blade by blade tip clearance measurement

NASA Astrophysics Data System (ADS)

Sheard, A. G.; Westerman, G. C.; Killeen, B.

A description of a capacitance-based tip clearance measurement system which integrates a novel technique for calibrating the capacitance probe in situ is presented. The on-line calibration system allows the capacitance probe to be calibrated immediately prior to use, providing substantial operational advantages and maximizing measurement accuracy. The possible error sources when it is used in service are considered, and laboratory studies of performance to ascertain their magnitude are discussed. The 1.2-mm diameter FM capacitance probe is demonstrated to be insensitive to variations in blade tip thickness from 1.25 to 1.45 mm. Over typical compressor blading the probe's range was four times the variation in blade to blade clearance encountered in engine run components.

A dielectric model of self-assembled monolayer interfaces by capacitive spectroscopy.

PubMed

Góes, Márcio S; Rahman, Habibur; Ryall, Joshua; Davis, Jason J; Bueno, Paulo R

2012-06-26

The presence of self-assembled monolayers at an electrode introduces capacitance and resistance contributions that can profoundly affect subsequently observed electronic characteristics. Despite the impact of this on any voltammetry, these contributions are not directly resolvable with any clarity by standard electrochemical means. A capacitive analysis of such interfaces (by capacitance spectroscopy), introduced here, enables a clean mapping of these features and additionally presents a means of studying layer polarizability and Cole-Cole relaxation effects. The resolved resistive term contributes directly to an intrinsic monolayer uncompensated resistance that has a linear dependence on the layer thickness. The dielectric model proposed is fully aligned with the classic Helmholtz plate capacitor model and additionally explains the inherently associated resistive features of molecular films.

Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs

NASA Astrophysics Data System (ADS)

Pi-Ho Hu, Vita; Chiu, Pin-Chieh

2018-04-01

The impact of device parameters on the switching characteristics of negative capacitance ultra-thin-body (UTB) germanium-on-insulator (NC-GeOI) MOSFETs is analyzed. NC-GeOI MOSFETs with smaller gate length (L g), EOT, and buried oxide thickness (T box) and thicker ferroelectric layer thickness (T FE) exhibit larger subthreshold swing improvements over GeOI MOSFETs due to better capacitance matching. Compared with GeOI MOSFETs, NC-GeOI MOSFETs exhibit better switching time due to improvements in effective drive current (I eff) and subthreshold swing. NC-GeOI MOSFET exhibits larger ST improvements at V dd = 0.3 V (-82.9%) than at V dd = 0.86 V (-9.7%), because NC-GeOI MOSFET shows 18.2 times higher I eff than the GeOI MOSFET at V dd = 0.3 V, while 2.5 times higher I eff at V dd = 0.86 V. This work provides the device design guideline of NC-GeOI MOSFETs for ultra-low power applications.

Leakage current and capacitance characteristics of Si/SiO2/Si single-barrier varactor

NASA Astrophysics Data System (ADS)

Mamor, M.; Fu, Y.; Nur, O.; Willander, M.; Bengtsson, S.

We investigate, both experimentally and theoretically, current and capacitance (I-V/C-V) characteristics and the device performance of Si/SiO2/Si single-barrier varactor diodes (SBVs). Two diodes were fabricated with different SiO2 layer thicknesses using the state-of-the-art wafer bonding technique. The devices have very low leakage currents (about 5×10-2 and 1.8×10-2 mA/mm2) and intrinsic capacitance levels of typically 1.5 and 50 nF/mm2 for diodes with 5-nm and 20-nm oxide layers, respectively. With the present device physical parameters (25-mm2 device area, 760-μm modulation layer thickness and 1015-cm-3 doping level), the estimated cut-off frequency is about 5×107 Hz. With the physical parameters of the present existing III-V triplers, the cut-off frequency of our Si-based SBV can be as high as 0.5 THz.

Robust and conductive two-dimensional metal-organic frameworks with exceptionally high volumetric and areal capacitance

DOE PAGES

Feng, Dawei; Lei, Ting; Lukatskaya, Maria R.; ...

2018-01-01

For miniaturized capacitive energy storage, volumetric and areal capacitances are more important metrics than gravimetric ones because of the constraints imposed by device volume and chip area. Typically used in commercial supercapacitors, porous carbons, although they provide a stable and reliable performance, lack volumetric performance because of their inherently low density and moderate capacitances. In this paper, we report a high-performing electrode based on conductive hexaaminobenzene (HAB)-derived two-dimensional metal-organic frameworks (MOFs). In addition to possessing a high packing density and hierarchical porous structure, these MOFs also exhibit excellent chemical stability in both acidic and basic aqueous solutions, which is inmore » sharp contrast to conventional MOFs. Submillimetre-thick pellets of HAB MOFs showed high volumetric capacitances up to 760 F cm -3 and high areal capacitances over 20 F cm -2. Furthermore, the HAB MOF electrodes exhibited highly reversible redox behaviours and good cycling stability with a capacitance retention of 90% after 12,000 cycles. In conclusion, these promising results demonstrate the potential of using redox-active conductive MOFs in energy-storage applications.« less

Robust and conductive two-dimensional metal-organic frameworks with exceptionally high volumetric and areal capacitance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Dawei; Lei, Ting; Lukatskaya, Maria R.

For miniaturized capacitive energy storage, volumetric and areal capacitances are more important metrics than gravimetric ones because of the constraints imposed by device volume and chip area. Typically used in commercial supercapacitors, porous carbons, although they provide a stable and reliable performance, lack volumetric performance because of their inherently low density and moderate capacitances. In this paper, we report a high-performing electrode based on conductive hexaaminobenzene (HAB)-derived two-dimensional metal-organic frameworks (MOFs). In addition to possessing a high packing density and hierarchical porous structure, these MOFs also exhibit excellent chemical stability in both acidic and basic aqueous solutions, which is inmore » sharp contrast to conventional MOFs. Submillimetre-thick pellets of HAB MOFs showed high volumetric capacitances up to 760 F cm -3 and high areal capacitances over 20 F cm -2. Furthermore, the HAB MOF electrodes exhibited highly reversible redox behaviours and good cycling stability with a capacitance retention of 90% after 12,000 cycles. In conclusion, these promising results demonstrate the potential of using redox-active conductive MOFs in energy-storage applications.« less

Robust and conductive two-dimensional metal-organic frameworks with exceptionally high volumetric and areal capacitance

NASA Astrophysics Data System (ADS)

Feng, Dawei; Lei, Ting; Lukatskaya, Maria R.; Park, Jihye; Huang, Zhehao; Lee, Minah; Shaw, Leo; Chen, Shucheng; Yakovenko, Andrey A.; Kulkarni, Ambarish; Xiao, Jianping; Fredrickson, Kurt; Tok, Jeffrey B.; Zou, Xiaodong; Cui, Yi; Bao, Zhenan

2018-01-01

For miniaturized capacitive energy storage, volumetric and areal capacitances are more important metrics than gravimetric ones because of the constraints imposed by device volume and chip area. Typically used in commercial supercapacitors, porous carbons, although they provide a stable and reliable performance, lack volumetric performance because of their inherently low density and moderate capacitances. Here we report a high-performing electrode based on conductive hexaaminobenzene (HAB)-derived two-dimensional metal-organic frameworks (MOFs). In addition to possessing a high packing density and hierarchical porous structure, these MOFs also exhibit excellent chemical stability in both acidic and basic aqueous solutions, which is in sharp contrast to conventional MOFs. Submillimetre-thick pellets of HAB MOFs showed high volumetric capacitances up to 760 F cm-3 and high areal capacitances over 20 F cm-2. Furthermore, the HAB MOF electrodes exhibited highly reversible redox behaviours and good cycling stability with a capacitance retention of 90% after 12,000 cycles. These promising results demonstrate the potential of using redox-active conductive MOFs in energy-storage applications.

Temperature dependence of the dielectric response of anodized Al-Al2O3-metal capacitors

NASA Astrophysics Data System (ADS)

Hickmott, T. W.

2003-03-01

The temperature dependence of capacitance, CM, and conductance, GM, of Al-Al2O3-metal capacitors with Cu, Ag, and Au electrodes has been measured between 100 and 340 K at seven frequencies between 10 kHz and 1 MHz. Al2O3 films between 15 and 64 nm thick were formed by anodizing evaporated Al films in borate-glycol or borate-H2O electrolyte. The interface capacitance at the Al2O3-metal interface, CI, which is in series with the capacitance CD due to the Al2O3 dielectric, is determined from plots of 1/CM versus insulator thickness. CI is not fixed for a given metal-insulator interface but depends on the vacuum system used to deposit the metal electrode. CI is nearly temperature independent. When CI is taken into account the dielectric constant of Al2O3 determined from capacitance measurements is ˜8.3 at 295 K. The dielectric constant does not depend on anodizing electrolyte, insulator thickness, metal electrode, deposition conditions for the metal electrode or measurement frequency. By contrast, GM of Al-Al2O3-metal capacitors depends on both the deposition conditions of the metal and on the metal. For Al-Al2O3-Cu capacitors, GM is larger for capacitors with large values of 1/CI that result when Cu is evaporated in an oil-pumped vacuum system. For Al-Al2O3-Ag capacitors, GM does not depend on the Ag deposition conditions.

Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

NASA Astrophysics Data System (ADS)

An, Yanbin; Shekhawat, Aniruddh; Behnam, Ashkan; Pop, Eric; Ural, Ant

2016-11-01

Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric, and p-type silicon as the semiconductor are fabricated and characterized. It is found that Fowler-Nordheim (F-N) tunneling dominates the gate tunneling current in these devices for oxide thicknesses of 10 nm and larger, whereas for devices with 5 nm oxide, direct tunneling starts to play a role in determining the total gate current. Furthermore, the temperature dependences of the F-N tunneling current for the 10 nm devices are characterized in the temperature range 77-300 K. The F-N coefficients and the effective tunneling barrier height are extracted as a function of temperature. It is found that the effective barrier height decreases with increasing temperature, which is in agreement with the results previously reported for conventional MOS devices with polysilicon or metal gate electrodes. In addition, high frequency capacitance-voltage measurements of these MOS devices are performed, which depict a local capacitance minimum under accumulation for thin oxides. By analyzing the data using numerical calculations based on the modified density of states of graphene in the presence of charged impurities, it is shown that this local minimum is due to the contribution of the quantum capacitance of graphene. Finally, the workfunction of the graphene gate electrode is extracted by determining the flat-band voltage as a function of oxide thickness. These results show that graphene is a promising candidate as the gate electrode in metal-oxide-semiconductor devices.

Silicon micromachined accelerometer/seismometer and method of making the same

NASA Technical Reports Server (NTRS)

Martin, Richard D. (Inventor); Pike, W. Thomas (Inventor)

2001-01-01

A silicon-based microaccelerometer for seismic application is provided using a low-resonant frequency (10 Hz), large proof mass (1 gram), and high Q suspension to achieve high sensitivity of less than 1 ng with a bandwidth a 0.05 to 50 Hz. The proof mass is cut away from a planar substrate in the form of a disk using abrasive cutting, which disk closely fits but does not touch a surrounding angular frame. The spring of the microaccelerometer between the angular frame and the proof mass is provided from two continuous, 3 microns thick membranes. The fixed capacitive electrodes are provided on separate, subsequently bonded substrates, and movable capacitive plates are provided on the membranes. By fabricating capacitive plates on the separate substrates, the gap between the fixed and movable capacitive plates in the differential capacitive sensor is closely controlled. The use of continuous membranes for the spring produces a shock resistant, robust sensor.

Thin and flexible active electrodes with shield for capacitive electrocardiogram measurement.

PubMed

Lee, Seung Min; Sim, Kyo Sik; Kim, Ko Keun; Lim, Yong Gyu; Park, Kwang Suk

2010-05-01

Capacitive electrocardiogram (ECG) measurement over clothing requires large electrodes that can remain in contact with curved body surfaces to increase the signal-to-noise ratio (SNR). In this article, we propose a new, thin, and flexible active electrode for use as a capacitive ECG measurement electrode. This electrode contains a shielding plate over its surface and it is extremely thin and can bend freely to cover larger body surfaces of the curve-shaped human torso. We evaluated the characteristics of flexible active electrodes under conditions of varying cloth thickness, electrode size, and contacting pressure. Electrodes of two sizes (45 and 12 cm(2)) were attached to a chest belt to measure the ECG from the human torso, and the results obtained for both the sizes were compared. Cloth thickness and electrode size showed a dominant effect on the SNR, whereas contacting pressure had almost no effect. The flexible active electrodes attached to chest belts wrapped closely and uniformly over the curved surface of the torso and SNR was increased with an increase in electrode size. Although the ECG signal became more distorted as the cloth thickness increased, the larger-sized flexible active electrode (45 cm(2)) showed less distortion than the smaller-sized one (12 cm(2)).

Equivalent model and power flow model for electric railway traction network

NASA Astrophysics Data System (ADS)

Wang, Feng

2018-05-01

An equivalent model of the Cable Traction Network (CTN) considering the distributed capacitance effect of the cable system is proposed. The model can be divided into 110kV side and 27.5kV side two kinds. The 110kV side equivalent model can be used to calculate the power supply capacity of the CTN. The 27.5kV side equivalent model can be used to solve the voltage of the catenary. Based on the equivalent simplified model of CTN, the power flow model of CTN which involves the reactive power compensation coefficient and the interaction of voltage and current, is derived.

Studying tantalum-based high-κ dielectrics in terms of capacitance measurements

NASA Astrophysics Data System (ADS)

Stojanovska-Georgievska, L.

2016-08-01

The trend of rapid development of microelectronics towards nano-miniaturization dictates the inevitable introduction of dielectrics with high permittivity (high-κ dielectrics), as alternative material for replacing SiO2. Therefore, studying these materials in terms of their characteristics, especially in terms of reliability, is of great importance for proper design and manufacture of devices. In this paper, alteration of capacitance in different frequency regimes is used, in order to determine the overall behavior of the material. Samples investigated here are MOS structures containing nanoscale tantalum based dielectrics. Layers of pure Ta2O5, but also Hf and Ti doped tantalum pentoxide, i.e. Ta2O5:Hf and Ta2O5:Ti are studied here. All samples are considered as ultrathin oxide layers with thicknesses less than 15 nm, obtained by radio frequent sputtering on p-type silicon substrate. Measuring capacitive characteristics enables determination of several specific parameters of the structures. The obtained results for capacitance in accumulation, the thickness and time evolution of the interfacial SiO2 layer, values of flatband and threshold voltage, density of oxide charges, interfacial and border states, and reliability properties favor the possibilities for more intensive use of studied materials in new nanoelectronic technologies.

Resistive and Capacitive Memory Effects in Oxide Insulator/ Oxide Conductor Hetero-Structures

NASA Astrophysics Data System (ADS)

Meyer, Rene; Miao, Maosheng; Wu, Jian; Chevallier, Christophe

2013-03-01

We report resistive and capacitive memory effects observed in oxide insulator/ oxide conductor hetero-structures. Electronic transport properties of Pt/ZrO2/PCMO/Pt structures with ZrO2 thicknesses ranging from 20A to 40A are studied before and after applying short voltage pulses of positive and negative polarity for set and reset operation. As processed devices display a non-linear IV characteristic which we attribute to trap assisted tunneling through the ZrO2 tunnel oxide. Current scaling with electrode area and tunnel oxide thickness confirms uniform conduction. The set/reset operation cause an up/down shift of the IV characteristic indicating that the conduction mechanism of both states is still dominated by tunneling. A change in the resistance is associated with a capacitance change of the device. An exponential relation between program voltages and set times is found. A model based on electric field mediated non-linear transport of oxygen ions across the ZrO2/PCMO interface is proposed. The change in the tunnel current is explained by ionic charge transfer between tunnel oxide and conductive metal oxide changing both tunnel barrier height and PCMO conductivity. DFT techniques are employed to explain the conductivity change in the PCMO interfacial layer observed through capacitance measurements.

The challenges of achieving good electrical and mechanical properties when making structural supercapacitors

NASA Astrophysics Data System (ADS)

Ciocanel, C.; Browder, C.; Simpson, C.; Colburn, R.

2013-04-01

The paper presents results associated with the electro-mechanical characterization of a composite material with power storage capability, identified throughout the paper as a structural supercapacitor. The structural supercapacitor uses electrodes made of carbon fiber weave, a separator made of Celgard 3501, and a solid PEG-based polymer blend electrolyte. To be a viable structural supercapacitor, the material has to have good mechanical and power storage/electrical properties. The literature in this area is inconsistent on which electrical properties are evaluated, and how those properties are assessed. In general, measurements of capacitance or specific capacitance (i.e. capacitance per unit area or per unit volume) are made, without considering other properties such as leakage resistance and equivalent series resistance of the supercapacitor. This paper highlights the significance of these additional electrical properties, discusses the fluctuation of capacitance over time, and proposes methods to improve the stability of the material's electric properties over time.

Single photon detection of 1.5 THz radiation with the quantum capacitance detector

NASA Astrophysics Data System (ADS)

Echternach, P. M.; Pepper, B. J.; Reck, T.; Bradford, C. M.

2018-01-01

Far-infrared spectroscopy can reveal secrets of galaxy evolution and heavy-element enrichment throughout cosmic time, prompting astronomers worldwide to design cryogenic space telescopes for far-infrared spectroscopy. The most challenging aspect is a far-infrared detector that is both exquisitely sensitive (limited by the zodiacal-light noise in a narrow wavelength band, λ/Δλ 1,000) and array-able to tens of thousands of pixels. We present the quantum capacitance detector, a superconducting device adapted from quantum computing applications in which photon-produced free electrons in a superconductor tunnel into a small capacitive island embedded in a resonant circuit. The quantum capacitance detector has an optically measured noise equivalent power below 10-20 W Hz-1/2 at 1.5 THz, making it the most sensitive far-infrared detector ever demonstrated. We further demonstrate individual far-infrared photon counting, confirming the excellent sensitivity and suitability for cryogenic space astrophysics.

Applying the Network Simulation Method for testing chaos in a resistively and capacitively shunted Josephson junction model

NASA Astrophysics Data System (ADS)

Bellver, Fernando Gimeno; Garratón, Manuel Caravaca; Soto Meca, Antonio; López, Juan Antonio Vera; Guirao, Juan L. G.; Fernández-Martínez, Manuel

In this paper, we explore the chaotic behavior of resistively and capacitively shunted Josephson junctions via the so-called Network Simulation Method. Such a numerical approach establishes a formal equivalence among physical transport processes and electrical networks, and hence, it can be applied to efficiently deal with a wide range of differential systems. The generality underlying that electrical equivalence allows to apply the circuit theory to several scientific and technological problems. In this work, the Fast Fourier Transform has been applied for chaos detection purposes and the calculations have been carried out in PSpice, an electrical circuit software. Overall, it holds that such a numerical approach leads to quickly computationally solve Josephson differential models. An empirical application regarding the study of the Josephson model completes the paper.

A Power-Efficient Capacitive Read-Out Circuit With Parasitic-Cancellation for MEMS Cochlea Sensors.

PubMed

Wang, Shiwei; Koickal, Thomas Jacob; Hamilton, Alister; Mastropaolo, Enrico; Cheung, Rebecca; Abel, Andrew; Smith, Leslie S; Wang, Lei

2016-02-01

This paper proposes a solution for signal read-out in the MEMS cochlea sensors that have very small sensing capacitance and do not have differential sensing structures. The key challenge in such sensors is the significant signal degradation caused by the parasitic capacitance at the MEMS-CMOS interface. Therefore, a novel capacitive read-out circuit with parasitic-cancellation mechanism is developed; the equivalent input capacitance of the circuit is negative and can be adjusted to cancel the parasitic capacitance. Chip results prove that the use of parasitic-cancellation is able to increase the sensor sensitivity by 35 dB without consuming any extra power. In general, the circuit follows a low-degradation low-amplification approach which is more power-efficient than the traditional high-degradation high-amplification approach; it employs parasitic-cancellation to reduce the signal degradation and therefore a lower gain is required in the amplification stage. Besides, the chopper-stabilization technique is employed to effectively reduce the low-frequency circuit noise and DC offsets. As a result of these design considerations, the prototype chip demonstrates the capability of converting a 7.5 fF capacitance change of a 1-Volt-biased 0.5 pF capacitive sensor pair into a 0.745 V signal-conditioned output at the cost of only 165.2 μW power consumption.

Sensing roller for in-process thickness measurement

DOEpatents

Novak, James L.

1996-01-01

An apparatus and method for processing materials by sensing roller, in which the sensing roller has a plurality of conductive rings (electrodes) separated by rings of dielectric material. Sensing capacitances or impedances between the electrodes provides information on thicknesses of the materials being processed, location of wires therein, and other like characteristics of the materials.

Enhanced Capacitance of Hybrid Layered Graphene/Nickel Nanocomposite for Supercapacitors

NASA Astrophysics Data System (ADS)

Mohd Zaid, Norsaadatul Akmal; Idris, Nurul Hayati

2016-08-01

In this work, Ni nanoparticles were directly decorated on graphene (G) nanosheets via mechanical ball milling. Based on transmission electron microscopy observations, the Ni nanoparticles were well dispersed and attached to the G nanosheet without any agglomerations. Electrochemical results showed that the capacitance of a G/Ni nanocomposite was 275 F g-1 at a current density of 2 A g-1, which is higher than the capacitance of bare G (145 F g-1) and bare Ni (3 F g-1). The G/Ni electrode also showed superior performance at a high current density, exhibiting a capacitance of 190 F g-1 at a current density of 5 A g-1 and a capacitance of 144 F g-1 at a current density of 10 A g-1. The equivalent series resistance for G/Ni nanocomposites also decreased. The enhanced performance of this hybrid supercapacitor is best described by the synergistic effect, i.e. dual charge-storage mechanism, which is demonstrated by electrical double layer and pseudocapacitance materials. Moreover, a high specific surface area and electrical conductivity of the materials enhanced the capacitance. These results indicate that the G/Ni nanocomposite is a potential supercapacitor.

Enhanced Capacitance of Hybrid Layered Graphene/Nickel Nanocomposite for Supercapacitors.

PubMed

Mohd Zaid, Norsaadatul Akmal; Idris, Nurul Hayati

2016-08-24

In this work, Ni nanoparticles were directly decorated on graphene (G) nanosheets via mechanical ball milling. Based on transmission electron microscopy observations, the Ni nanoparticles were well dispersed and attached to the G nanosheet without any agglomerations. Electrochemical results showed that the capacitance of a G/Ni nanocomposite was 275 F g(-1) at a current density of 2 A g(-1), which is higher than the capacitance of bare G (145 F g(-1)) and bare Ni (3 F g(-1)). The G/Ni electrode also showed superior performance at a high current density, exhibiting a capacitance of 190 F g(-1) at a current density of 5 A g(-1) and a capacitance of 144 F g(-1) at a current density of 10 A g(-1). The equivalent series resistance for G/Ni nanocomposites also decreased. The enhanced performance of this hybrid supercapacitor is best described by the synergistic effect, i.e. dual charge-storage mechanism, which is demonstrated by electrical double layer and pseudocapacitance materials. Moreover, a high specific surface area and electrical conductivity of the materials enhanced the capacitance. These results indicate that the G/Ni nanocomposite is a potential supercapacitor.

Electropolymerized polyazulene as active material in flexible supercapacitors

NASA Astrophysics Data System (ADS)

Suominen, Milla; Lehtimäki, Suvi; Yewale, Rahul; Damlin, Pia; Tuukkanen, Sampo; Kvarnström, Carita

2017-07-01

We report the capacitive behavior of electrochemically polymerized polyazulene films in different ionic liquids. The ionic liquids in this study represent conventional imidazolium based ionic liquids with tetrafluoroborate and bis(trifluoromethylsulfonyl)imide anions as well as an unconventional choline based ionic liquid. The effect of different ionic liquids on the polymerization and capacitive performance of polyazulene films is demonstrated by cyclic voltammetry and electrochemical impedance spectroscopy in a 3-electrode cell configuration. The films exhibit the highest capacitances in the lowest viscosity ionic liquid (92 mF cm-2), while synthesis in high viscosity ionic liquid shortens the conjugation length and results in lower electroactivity (25 mF cm-2). The obtained films also show good cycling stabilities retaining over 90% of their initial capacitance over 1200 p-doping cycles. We also demonstrate, for the first time, flexible polyazulene supercapacitors of symmetric and asymmetric configurations using the choline based ionic liquid as electrolyte. In asymmetric configuration, capacitance of 55 mF (27 mF cm-2) with an equivalent series resistance of 19 Ω is obtained at operating voltage of 1.5 V. Upon increasing the operating voltage up to 2.4 V, the capacitance increases to 72 mF (36 mF cm-2).

Design and Laboratory Validation of a Capacitive Sensor for Measuring the Recession of Thin-Layered Ablator

NASA Technical Reports Server (NTRS)

Noffz, Gregory K.; Bowman, Michael P.

1996-01-01

Flight vehicles are typically instrumented with subsurface thermocouples to estimate heat transfer at the surface using inverse analysis procedures. If the vehicle has an ablating heat shield, however, temperature time histories from subsurface thermocouples no longer provide enough information to estimate heat flux at the surface. In this situation, the geometry changes and thermal energy leaves the surface in the form of ablation products. The ablation rate is required to estimate heat transfer to the surface. A new concept for a capacitive sensor has been developed to measure ablator depth using the ablator's dielectric effect on a capacitor's fringe region. Relying on the capacitor's fringe region enables the gage to be flush mounted in the vehicle's permanent structure and not intrude into the ablative heat shield applied over the gage. This sensor's design allows nonintrusive measurement of the thickness of dielectric materials, in particular, the recession rates of low-temperature ablators applied in thin (0.020 to 0.060 in. (0.05 to 0.15 mm)) layers. Twenty capacitive gages with 13 different sensing element geometries were designed, fabricated, and tested. A two-dimensional finite-element analysis was performed on several candidate geometries. Calibration procedures using ablator-simulating shims are described. A one-to-one correspondence between system output and dielectric material thickness was observed out to a thickness of 0.055 in. (1.4 mm) for a material with a permittivity about three times that of air or vacuum. A novel method of monitoring the change in sensor capacitance was developed. This technical memorandum suggests further improvements in gage design and fabrication techniques.

Capacitive Energy Extraction by Few-Layer Graphene Electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lian, Cheng; Zhan, Cheng; Jiang, De-en

Capacitive double-layer expansion is a promising technology to harvest energy arising from the salinity difference between freshwater and seawater. Its optimal performance requires a careful selection of the operation potentials and electrode materials. While carbonaceous materials such as graphene and various forms of activated carbons are routinely used as the electrodes, there is little knowledge on how the quantum capacitance and the electric double-layer (EDL) capacitance, which are on the same order of magnitude, affect the capacitive performance. Toward understanding that from a theoretical perspective, here we study the capacitive energy extraction with graphene electrodes as a function of themore » number of graphene layers. The classical density functional theory is joined with the electronic density functional theory to obtain the EDL and the quantum capacitance, respectively. The theoretical results show that the quantum capacitance contribution plays a dominant role in extracting energy using the single-layer graphene, but its effect diminishes as the number of graphene layers increases. The overall extracted energy is dominated by the EDL contribution beyond about four graphene layers. Electrodes with more graphene layers are able to extract more energy at low charging potential. Here, because many porous carbons have nanopores with stacked graphene layers, our theoretical predictions are useful to identify optimal operation parameters for capacitive energy extraction with porous electrodes of different wall thickness.« less

Capacitive Energy Extraction by Few-Layer Graphene Electrodes

DOE PAGES

Lian, Cheng; Zhan, Cheng; Jiang, De-en; ...

2017-06-09

Capacitive double-layer expansion is a promising technology to harvest energy arising from the salinity difference between freshwater and seawater. Its optimal performance requires a careful selection of the operation potentials and electrode materials. While carbonaceous materials such as graphene and various forms of activated carbons are routinely used as the electrodes, there is little knowledge on how the quantum capacitance and the electric double-layer (EDL) capacitance, which are on the same order of magnitude, affect the capacitive performance. Toward understanding that from a theoretical perspective, here we study the capacitive energy extraction with graphene electrodes as a function of themore » number of graphene layers. The classical density functional theory is joined with the electronic density functional theory to obtain the EDL and the quantum capacitance, respectively. The theoretical results show that the quantum capacitance contribution plays a dominant role in extracting energy using the single-layer graphene, but its effect diminishes as the number of graphene layers increases. The overall extracted energy is dominated by the EDL contribution beyond about four graphene layers. Electrodes with more graphene layers are able to extract more energy at low charging potential. Here, because many porous carbons have nanopores with stacked graphene layers, our theoretical predictions are useful to identify optimal operation parameters for capacitive energy extraction with porous electrodes of different wall thickness.« less

Equivalent circuit for the characterization of the resonance mode in piezoelectric systems

NASA Astrophysics Data System (ADS)

Fernández-Afonso, Y.; García-Zaldívar, O.; Calderón-Piñar, F.

2015-12-01

The impedance properties in polarized piezoelectric can be described by electric equivalent circuits. The classic circuit used in the literature to describe real systems is formed by one resistor (R), one inductance (L) and one capacitance C connected in series and one capacity (C0) connected in parallel with the formers. Nevertheless, the equation that describe the resonance and anti-resonance frequencies depends on a complex manner of R, L, C and C0. In this work is proposed a simpler model formed by one inductance (L) and one capacity (C) in series; one capacity (C0) in parallel; one resistor (RP) in parallel and one resistor (RS) in series with other components. Unlike the traditional circuit, the equivalent circuit elements in the proposed model can be simply determined by knowing the experimental values of the resonance frequency fr, anti-resonance frequency fa, impedance module at resonance frequency |Zr|, impedance module at anti-resonance frequency |Za| and low frequency capacitance C0, without fitting the impedance experimental data to the obtained equation.

Effects of HfO2/Al2O3 gate stacks on electrical performance of planar In x Ga1- x As tunneling field-effect transistors

NASA Astrophysics Data System (ADS)

Ahn, Dae-Hwan; Yoon, Sang-Hee; Takenaka, Mitsuru; Takagi, Shinichi

2017-08-01

We study the impact of gate stacks on the electrical characteristics of Zn-diffused source In x Ga1- x As tunneling field-effect transistors (TFETs) with Al2O3 or HfO2/Al2O3 gate insulators. Ta and W gate electrodes are compared in terms of the interface trap density (D it) of InGaAs MOS interfaces. It is found that D it is lower at the W/HfO2/Al2O3 InGaAs MOS interface than at the Ta/HfO2/Al2O3 interface. The In0.53Ga0.47As TFET with a W/HfO2 (2.7 nm)/Al2O3 (0.3 nm) gate stack of 1.4-nm-thick capacitance equivalent thickness (CET) has a steep minimum subthreshold swing (SS) of 57 mV/dec, which is attributed to the thin CET and low D it. Also, the In0.53Ga0.47As (2.6 nm)/In0.67Ga0.33As (3.2 nm)/In0.53Ga0.47As (96.5 nm) quantum-well (QW) TFET supplemented with this 1.4-nm-thick CET gate stack exhibits a steeper minimum SS of 54 mV/dec and a higher on-current (I on) than those of the In0.53Ga0.47As TFET.

Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors

PubMed Central

Jeong, Seong-Jun; Gu, Yeahyun; Heo, Jinseong; Yang, Jaehyun; Lee, Chang-Seok; Lee, Min-Hyun; Lee, Yunseong; Kim, Hyoungsub; Park, Seongjun; Hwang, Sungwoo

2016-01-01

The downscaling of the capacitance equivalent oxide thickness (CET) of a gate dielectric film with a high dielectric constant, such as atomic layer deposited (ALD) HfO2, is a fundamental challenge in achieving high-performance graphene-based transistors with a low gate leakage current. Here, we assess the application of various surface modification methods on monolayer graphene sheets grown by chemical vapour deposition to obtain a uniform and pinhole-free ALD HfO2 film with a substantially small CET at a wafer scale. The effects of various surface modifications, such as N-methyl-2-pyrrolidone treatment and introduction of sputtered ZnO and e-beam-evaporated Hf seed layers on monolayer graphene, and the subsequent HfO2 film formation under identical ALD process parameters were systematically evaluated. The nucleation layer provided by the Hf seed layer (which transforms to the HfO2 layer during ALD) resulted in the uniform and conformal deposition of the HfO2 film without damaging the graphene, which is suitable for downscaling the CET. After verifying the feasibility of scaling down the HfO2 thickness to achieve a CET of ~1.5 nm from an array of top-gated metal-oxide-graphene field-effect transistors, we fabricated graphene heterojunction tunnelling transistors with a record-low subthreshold swing value of <60 mV/dec on an 8″ glass wafer. PMID:26861833

Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors.

PubMed

Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

2015-12-14

Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10(-10) S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water.

Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors

PubMed Central

Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R.; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

2015-01-01

Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10–10 S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water. PMID:26658331

Reactanceless synthesized impedance bandpass amplifier

NASA Technical Reports Server (NTRS)

Kleinberg, L. L. (Inventor)

1985-01-01

An active R bandpass filter network is formed by four operational amplifier stages interconnected by discrete resistances. One pair of stages synthesize an equivalent input impedance of an inductance (L sub eq) in parallel with a discrete resistance (R sub o) while the second pair of stages synthesizes an equivalent input impedance of a capacitance (C sub eq) serially coupled to another discrete resistance (R sub i) coupled in parallel with the first two stages. The equivalent input impedances aggregately define a tuned resonant bandpass filter in the roll-off regions of the operational amplifiers.

A novel capacitance sensor for fireside corrosion measurement.

PubMed

Ban, Heng; Li, Zuoping

2009-11-01

Fireside corrosion in coal-fired power plants is a leading mechanism for boiler tube failures. Online monitoring of fireside corrosion can provide timely data to plant operators for mitigation implementation. This paper presents a novel sensor concept for measuring metal loss based on electrical capacitance. Laboratory-scale experiments demonstrated the feasibility of design, fabrication, and operation of the sensor. The fabrication of the prototype sensor involved sputtering deposition of a thin metal coating with varying thickness on a ceramic substrate. Corrosion metal loss resulted in a proportional decrease in electrical capacitance of the sensor. Laboratory experiments using a muffle furnace with an oxidation environment demonstrated that low carbon steel coatings on ceramic substrate survived cyclic temperatures over 500 degrees C. Measured corrosion rates of sputtered coating in air had an Arrhenius exponential dependence on temperature, with metal thickness loss ranging from 2.0 nm/h at 200 degrees C to 2.0 microm/h at 400 degrees C. Uncertainty analysis indicated that the overall measurement uncertainty was within 4%. The experimental system showed high signal-to-noise ratio, and the sensor could measure submicrometer metal thickness changes. The laboratory experiments demonstrated that the sensor concept and measurement system are capable of short term, online monitoring of metal loss, indicating the potential for the sensor to be used for fireside corrosion monitoring and other metal loss measurement.

A novel capacitance sensor for fireside corrosion measurement

NASA Astrophysics Data System (ADS)

Ban, Heng; Li, Zuoping

2009-11-01

Fireside corrosion in coal-fired power plants is a leading mechanism for boiler tube failures. Online monitoring of fireside corrosion can provide timely data to plant operators for mitigation implementation. This paper presents a novel sensor concept for measuring metal loss based on electrical capacitance. Laboratory-scale experiments demonstrated the feasibility of design, fabrication, and operation of the sensor. The fabrication of the prototype sensor involved sputtering deposition of a thin metal coating with varying thickness on a ceramic substrate. Corrosion metal loss resulted in a proportional decrease in electrical capacitance of the sensor. Laboratory experiments using a muffle furnace with an oxidation environment demonstrated that low carbon steel coatings on ceramic substrate survived cyclic temperatures over 500 °C. Measured corrosion rates of sputtered coating in air had an Arrhenius exponential dependence on temperature, with metal thickness loss ranging from 2.0 nm/h at 200 °C to 2.0 μm/h at 400 °C. Uncertainty analysis indicated that the overall measurement uncertainty was within 4%. The experimental system showed high signal-to-noise ratio, and the sensor could measure submicrometer metal thickness changes. The laboratory experiments demonstrated that the sensor concept and measurement system are capable of short term, online monitoring of metal loss, indicating the potential for the sensor to be used for fireside corrosion monitoring and other metal loss measurement.

DOE Office of Scientific and Technical Information (OSTI.GOV)

DE GERONIMO,G.; FRIED, J.; FROST, E.

We describe a front-end application specific integrated circuit (ASIC) developed for a silicon Compton telescope. Composed of 32 channels, it reads out signals in both polarities from each side of a Silicon strip sensor, 2 mm thick 27 cm long, characterized by a strip capacitance of 30 pF. Each front-end channel provides low-noise charge amplification, shaping with a stabilized baseline, discrimination, and peak detection with an analog memory. The channels can process events simultaneously, and the read out is sparsified. The charge amplifier makes uses a dual-cascode configuration and dual-polarity adaptive reset, The low-hysteresis discriminator and the multi-phase peak detectormore » process signals with a dynamic range in excess of four hundred. An equivalent noise charge (ENC) below 200 electrons was measured at 30 pF, with a slope of about 4.5 electrons/pF at a peaking time of 4 {micro}s. With a total dissipated power of 5 mW the channel covers an energy range up to 3.2 MeV.« less

Comparative Study of HfTa-based gate-dielectric Ge metal-oxide-semiconductor capacitors with and without AlON interlayer

NASA Astrophysics Data System (ADS)

Xu, J. P.; Zhang, X. F.; Li, C. X.; Chan, C. L.; Lai, P. T.

2010-04-01

The electrical properties and high-field reliability of HfTa-based gate-dielectric metal-oxide-semiconductor (MOS) devices with and without AlON interlayer on Ge substrate are investigated. Experimental results show that the MOS capacitor with HfTaON/AlON stack gate dielectric exhibits low interface-state/oxide-charge densities, low gate leakage, small capacitance equivalent thickness (˜1.1 nm), and high dielectric constant (˜20). All of these should be attributed to the blocking role of the ultrathin AlON interlayer against interdiffusions of Ge, Hf, and Ta and penetration of O into the Ge substrate, with the latter effectively suppressing the unintentional formation of unstable poor-quality low- k GeO x and giving a superior AlON/Ge interface. Moreover, incorporation of N into both the interlayer and high- k dielectric further improves the device reliability under high-field stress through the formation of strong N-related bonds.

Sensing roller for in-process thickness measurement

DOEpatents

Novak, J.L.

1996-07-16

An apparatus and method are disclosed for processing materials by sensing roller, in which the sensing roller has a plurality of conductive rings (electrodes) separated by rings of dielectric material. Sensing capacitances or impedances between the electrodes provides information on thicknesses of the materials being processed, location of wires therein, and other like characteristics of the materials. 6 figs.

Experimental Study of Load Carrying Capacity of Point Contacts at Zero Entrainment Velocity

NASA Technical Reports Server (NTRS)

Shogin, B. A.; Jones, W. R., Jr.; Kingsbury, E. P.; Jansen, M. J.; Prahl, J. M.

1998-01-01

A capacitance technique was used to monitor the film thickness separating two steel balls while subjecting the ball-ball contact to highly stressed, zero entrainment velocity conditions. Tests were performed in a nitrogen atmosphere and utilized 52100 steel balls and a polyalphaolefin lubricant. Capacitance to film thickness accuracy was verified under pure rolling conditions using established EHL theory. Zero entrainment velocity tests were performed at sliding speeds from 6.0 to 10.0 m/s and for sustained amounts of time to 28.8 min. The protective lubricant film separating the specimens at zero entrainment velocity had a film thickness between 0.10 to 0.14 microns (4 to 6 micro in.), which corresponded to a k value of 4. The formation of an immobile surface film formed by lubricant entrapment is discussed as an explanation of the load carrying capacity at zero entrainment velocity conditions, relevant to the ball-ball contacts occurring in retainerless ball bearings.

Improving the electrical properties of lanthanum silicate films on ge metal oxide semiconductor capacitors by adopting interfacial barrier and capping layers.

PubMed

Choi, Yu Jin; Lim, Hajin; Lee, Suhyeong; Suh, Sungin; Kim, Joon Rae; Jung, Hyung-Suk; Park, Sanghyun; Lee, Jong Ho; Kim, Seong Gyeong; Hwang, Cheol Seong; Kim, HyeongJoon

2014-05-28

The electrical properties of La-silicate films grown by atomic layer deposition (ALD) on Ge substrates with different film configurations, such as various Si concentrations, Al2O3 interfacial passivation layers, and SiO2 capping layers, were examined. La-silicate thin films were deposited using alternating injections of the La[N{Si(CH3)3}2]3 precursor with O3 as the La and O precursors, respectively, at a substrate temperature of 310 °C. The Si concentration in the La-silicate films was further controlled by adding ALD cycles of SiO2. For comparison, La2O3 films were also grown using [La((i)PrCp)3] and O3 as the La precursor and oxygen source, respectively, at the identical substrate temperature. The capacitance-voltage (C-V) hysteresis decreased with an increasing Si concentration in the La-silicate films, although the films showed a slight increase in the capacitance equivalent oxide thickness. The adoption of Al2O3 at the interface as a passivation layer resulted in lower C-V hysteresis and a low leakage current density. The C-V hysteresis voltages of the La-silicate films with Al2O3 passivation and SiO2 capping layers was significantly decreased to ∼0.1 V, whereas the single layer La-silicate film showed a hysteresis voltage as large as ∼1.0 V.

All-tantalum electrolytic capacitor

NASA Technical Reports Server (NTRS)

Green, G. E., Jr.

1977-01-01

Device uses single-compression tantalum-to-tantalum seal. Single-compression seal allows better utilization of volume within device. As result of all-tantalum case and lengthened cathode, electrical parameters, particularly equivalent series resistance and capacitance stability, improved over silver-cased capacitor.

In vitro 3D full thickness skin equivalent tissue model using silk and collagen biomaterials

PubMed Central

Bellas, Evangelia; Seiberg, Miri; Garlick, Jonathan; Kaplan, David L.

2013-01-01

Current approaches to develop skin equivalents often only include the epidermal and dermal components. Yet, full thickness skin includes the hypodermis, a layer below the dermis of adipose tissue containing vasculature, nerves and fibroblasts, necessary to support the epidermis and dermis. In the present study, we developed a full thickness skin equivalent including an epidermis, dermis and hypodermis that could serve as an in vitro model for studying skin development, disease or as a platform for consumer product testing as a means to avoid animal testing. The full thickness skin equivalent was easy to handle and was maintained in culture for greater than 14 days while expressing physiologically relevant morphologies of both the epidermis and dermis, as seen by keratin 10, collagen I and collagen IV expression. The skin equivalent produced glycerol and leptin, markers of adipose tissue metabolism. This work serves as a foundation for our understanding of some of the necessary factors needed to develop a stable, functional model of full-thickness skin. PMID:23161763

SU-E-T-353: Verification of Water Equivalent Thickness (WET) and Water Equivalent Spreadness (WES) of Proton Beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Demez, N; Lee, T; Keppel, Cynthia

Purpose: To verify calculated water equivalent thickness (WET) and water equivalent spreadness (WES) in various tissue equivalent media for proton therapy Methods: Water equivalent thicknesses (WET) of tissue equivalent materials have been calculated using the Bragg-Kleeman rule. Lateral spreadness and fluence reduction of proton beams both in those media were calculated using proton loss model (PLM) algorithm. In addition, we calculated lateral spreadness ratios with respect to that in water at the same WET depth and so the WES was defined. The WETs of those media for different proton beam energies were measured using MLIC (Multi-Layered Ionization Chamber). Also, fluencemore » and field sizes in those materials of various thicknesses were measured with ionization chambers and films Results: Calculated WETs are in agreement with measured WETs within 0.5%. We found that water equivalent spreadness (WES) is constant and the fluence and field size measurements verify that fluence can be estimated using the concept of WES. Conclusions: Calculation of WET based on the Bragg-Kleeman rule as well as the constant WES of proton beams for tissue equivalent phantoms can be used to predict fluence and field sizes at the depths of interest both in tissue equivalent media accurately for clinically available protonenergies.« less

Experimental investigations of elastohydrodynamic lubrication

NASA Technical Reports Server (NTRS)

Hamrock, B. J.; Dowson, D.

1983-01-01

Various experimental studies of elastohydrodynamic lubrication have been reviewed. The various types of machines used in these investigations, such as the disc, two and four ball, crossed-cylinders, and crossed-axes rolling disc machine, are described. The measurement of the most important parameters, such as film shape, film thickness, pressure, temperature, and traction, is considered. Determination of the film thickness is generally the most important of these effects since it dictates the extent to which the asperities on opposing surfaces can come into contact and thus has a direct bearing on wear and fatigue failure of the contacting surfaces. Several different techniques for measuring film thickness have been described, including electrical resistance, capacitance, X-ray, optical interferometry, laser beam diffraction, strain gage, and spring dynamometer methods. An attempt has been made to describe the basic concepts and limitations of each of these techniques. These various methods have been used by individual researchers, but there is no universally acceptable technique for measuring elastohydrodynamic film thickness. Capacitance methods have provided most of the reliable data for nominal line or rectangular conjunctions, but optical interferometry has proved to be the most effective procedure for elliptical contacts. Optical interferometry has the great advantage that it reveals not only the film thickness, but also details of the film shape over the complete area of the conjunction.

Differential Depletion Capacitance Approximation Analysis Under DC Voltage for Air-Exposed Cu/n-Si Schottky Diodes

NASA Astrophysics Data System (ADS)

Korkut, A.

It is well known that the semiconductor surface is easily oxidized by air-media in time. This work studieds the characterization of Schottky diodes and changes in depletion capacitance, which is caused by air exposure of a group of Cu/n-Si/Al Schottky diodes. First, data for current-voltage and capacitance-voltage were a Ren, and then ideality factor, barrier height, built-in potential (Vbi), donor concentration and Fermi level, interfacial oxide thickness, interface state density were calculated. It is seen that depletion capacitance was calculate; whereafter built-in potential played an important role in Schottky diodes characteristic. Built-in potential directly affects the characteristic of Schottky diodes and a turning point occurs. In case of forward and reverse bias, depletion capacitance versus voltage graphics are matched, but in an opposite direction. In case of forward bias, differential depletion capacitance begins from minus values, it is raised to first Vbi, then reduced to second Vbi under the minus condition. And it sharply gones up to positive apex, then sharply falls down to near zero, but it takes positive values depending on DC voltage. In case of reverse bias, differential depletion capacitance takes to small positive values. In other respects, we see that depletion characteristics change considerably under DC voltage.

Assessment of the performance characteristics of a prototype 12-element capacitive contact flexible microstrip applicator (CFMA-12) for superficial hyperthermia.

PubMed

Lee, W M; Gelvich, E A; van der Baan, P; Mazokhin, V N; van Rhoon, G C

2004-09-01

The electrical performance of the CFMA-12 operating at 433 MHz is assessed under laboratory conditions using a RF network analyser. From measurements of the scattering parameters of the CFMA-12 on both a multi-layered muscle- and fat/muscle-equivalent phantom, the optimal water bolus thickness, at which the transfer of the energy to the phantom configuration is maximal, is determined to be approximately 1 cm. The SAR distribution of the CFMA-12 in a multi-layered muscle-equivalent phantom is characterized using Schottky diode sheets and a TVS-600 IR camera. From the SAR measurements using the Schottky diode sheets it is shown that the contribution of the E(x) component to the SAR (SAR(x)) is maximal 7% of the contribution of the E(y)component to the SAR (SAR(y)) at different layers in both phantom configurations. The complete SAR distribution (SAR(tot)) at different depths is measured using the power pulse technique. From these measurements, it can be seen that SAR(y)at a depth of 0 cm in the muscle-equivalent phantom represents up to 80% of SAR(tot). At 1 and 2 cm depth, SAR(y) is up to 95% of SAR(tot). Therefore, in homogeneous muscle-equivalent phantoms, E(y) is the largest E-field component and measurement of SAR(y) distribution is sufficient to characterize SAR-steering performance of the CFMA-12. SAR steering measurements at 1 cm depth in the muscle-equivalent phantom show that the SAR maximum varies by 40% (1 SD) around the average value of 38.8 W kg(-1) (range 10-65 W kg(-1)) between single antenna elements. The effective fieldsize (E(50)) varies by 14% (1 SD) around the average value of 19.1 cm(2).

In situ fabrication of nickel aluminum-layered double hydroxide nanosheets/hollow carbon nanofibers composite as a novel electrode material for supercapacitors

NASA Astrophysics Data System (ADS)

He, Fang; Hu, Zhibiao; Liu, Kaiyu; Zhang, Shuirong; Liu, Hongtao; Sang, Shangbin

2014-12-01

This paper introduces a new design route to fabricate nickel aluminum-layered double hydroxide (NiAl-LDH) nanosheets/hollow carbon nanofibers (CNFs) composite through an in situ growth method. The NiAl-LDH thin layers which grow on hollow carbon nanofibers have an average thickness of 13.6 nm. The galvanostatic charge-discharge test of the NiAl-LDH/CNFs composite yields an impressive specific capacitance of 1613 F g-1 at 1 A g-1 in 6 M KOH solution, the composite shows a remarkable specific capacitance of 1110 F g-1 even at a high current density of 10 A g-1. Furthermore, the composite remains a specific capacitance of 1406 F g-1 after 1000 cycles at 2 A g-1, indicating the composite has excellent high-current capacitive behavior and good cycle stability in compared to pristine NiAl-LDH.

Enhanced Capacitance of Hybrid Layered Graphene/Nickel Nanocomposite for Supercapacitors

PubMed Central

Mohd Zaid, Norsaadatul Akmal; Idris, Nurul Hayati

2016-01-01

In this work, Ni nanoparticles were directly decorated on graphene (G) nanosheets via mechanical ball milling. Based on transmission electron microscopy observations, the Ni nanoparticles were well dispersed and attached to the G nanosheet without any agglomerations. Electrochemical results showed that the capacitance of a G/Ni nanocomposite was 275 F g−1 at a current density of 2 A g−1, which is higher than the capacitance of bare G (145 F g−1) and bare Ni (3 F g−1). The G/Ni electrode also showed superior performance at a high current density, exhibiting a capacitance of 190 F g−1 at a current density of 5 A g−1 and a capacitance of 144 F g−1 at a current density of 10 A g−1. The equivalent series resistance for G/Ni nanocomposites also decreased. The enhanced performance of this hybrid supercapacitor is best described by the synergistic effect, i.e. dual charge-storage mechanism, which is demonstrated by electrical double layer and pseudocapacitance materials. Moreover, a high specific surface area and electrical conductivity of the materials enhanced the capacitance. These results indicate that the G/Ni nanocomposite is a potential supercapacitor. PMID:27553290

A binder-free NiCo2O4 nanosheet/3D elastic N-doped hollow carbon nanotube sponge electrode with high volumetric and gravimetric capacitances for asymmetric supercapacitors.

PubMed

Tong, Hao; Yue, Shihong; Lu, Liang; Jin, Fengqiao; Han, Qiwei; Zhang, Xiaogang; Liu, Jie

2017-11-09

To increase the volumetric and gravimetric capacitances of supercapacitors, a new class of electrode materials with high electrochemical activity and favorable structures is extremely desired. In this work, a hollow novel nitrogen-doped 3D elastic single-walled carbon nanotube sponge (NSCS) which is ultra lightweight with the lowest density of 0.8 mg cm -3 , and has a high open surface structure for electrolyte accessibility and excellent compressible properties as the electrode scaffold has been successfully fabricated by the pyrolysis method which could produce the carbon nanotube sponge easily on a large scale without high-cost and time-consuming processes. Moreover, a NiCo 2 O 4 nanosheet supported on the NSCS has been successfully fabricated. The highest volumetric and gravimetric capacitance of this electrode is 790 F cm -3 at 1.43 g cm -3 and 1618 F g -1 at 0.54 g cm -3 with excellent cycling stability. The density of NiCo 2 O 4 /NSCS electrode was adjusted by mechanical compression and the most favorable density of the film for both high volumetric and gravimetric capacitances obtained was 1.21 g cm -3 . The thick NiCo 2 O 4 /NSCS film of 72 μm has been fabricated at this favorable density, presenting both high volumetric and gravimetric capacitances of 597 F cm -3 and 1074 F g -1 at 1 A g -1 , respectively, indicating that the structure of the NSCS is extremely feasible for obtaining a thick film electrode with excellent volumetric and gravimetric capacitances. Furthermore, an asymmetric supercapacitor of NiCo 2 O 4 /NSCS//NGN/CNTs was fabricated, exhibiting a high gravimetric energy density of 47.65 W h kg -1 at 536 W kg -1 and a volumetric energy density of 33.44 W h L -1 at 376.16 W L -1 .

Distributed Capacitive Sensor for Sample Mass Measurement

NASA Technical Reports Server (NTRS)

Toda, Risaku; McKinney, Colin; Jackson, Shannon P.; Mojarradi, Mohammad; Manohara, Harish; Trebi-Ollennu, Ashitey

2011-01-01

Previous robotic sample return missions lacked in situ sample verification/ quantity measurement instruments. Therefore, the outcome of the mission remained unclear until spacecraft return. In situ sample verification systems such as this Distributed Capacitive (DisC) sensor would enable an unmanned spacecraft system to re-attempt the sample acquisition procedures until the capture of desired sample quantity is positively confirmed, thereby maximizing the prospect for scientific reward. The DisC device contains a 10-cm-diameter pressure-sensitive elastic membrane placed at the bottom of a sample canister. The membrane deforms under the weight of accumulating planetary sample. The membrane is positioned in close proximity to an opposing rigid substrate with a narrow gap. The deformation of the membrane makes the gap narrower, resulting in increased capacitance between the two parallel plates (elastic membrane and rigid substrate). C-V conversion circuits on a nearby PCB (printed circuit board) provide capacitance readout via LVDS (low-voltage differential signaling) interface. The capacitance method was chosen over other potential approaches such as the piezoelectric method because of its inherent temperature stability advantage. A reference capacitor and temperature sensor are embedded in the system to compensate for temperature effects. The pressure-sensitive membranes are aluminum 6061, stainless steel (SUS) 403, and metal-coated polyimide plates. The thicknesses of these membranes range from 250 to 500 m. The rigid substrate is made with a 1- to 2-mm-thick wafer of one of the following materials depending on the application requirements glass, silicon, polyimide, PCB substrate. The glass substrate is fabricated by a microelectromechanical systems (MEMS) fabrication approach. Several concentric electrode patterns are printed on the substrate. The initial gap between the two plates, 100 m, is defined by a silicon spacer ring that is anodically bonded to the glass substrate. The fabricated proof-of-concept devices have successfully demonstrated tens to hundreds of picofarads of capacitance change when a simulated sample (100 g to 500 g) is placed on the membrane.

Modeling methodology for a CMOS-MEMS electrostatic comb

NASA Astrophysics Data System (ADS)

Iyer, Sitaraman V.; Lakdawala, Hasnain; Mukherjee, Tamal; Fedder, Gary K.

2002-04-01

A methodology for combined modeling of capacitance and force 9in a multi-layer electrostatic comb is demonstrated in this paper. Conformal mapping-based analytical methods are limited to 2D symmetric cross-sections and cannot account for charge concentration effects at corners. Vertex capacitance can be more than 30% of the total capacitance in a single-layer 2 micrometers thick comb with 10 micrometers overlap. Furthermore, analytical equations are strictly valid only for perfectly symmetrical finger positions. Fringing and corner effects are likely to be more significant in a multi- layered CMOS-MEMS comb because of the presence of more edges and vertices. Vertical curling of CMOS-MEMS comb fingers may also lead to reduced capacitance and vertical forces. Gyroscopes are particularly sensitive to such undesirable forces, which therefore, need to be well-quantified. In order to address the above issues, a hybrid approach of superposing linear regression models over a set of core analytical models is implemented. Design of experiments is used to obtain data for capacitance and force using a commercial 3D boundary-element solver. Since accurate force values require significantly higher mesh refinement than accurate capacitance, we use numerical derivatives of capacitance values to compute the forces. The model is formulated such that the capacitance and force models use the same regression coefficients. The comb model thus obtained, fits the numerical capacitance data to within +/- 3% and force to within +/- 10%. The model is experimentally verified by measuring capacitance change in a specially designed test structure. The capacitance model matches measurements to within 10%. The comb model is implemented in an Analog Hardware Description Language (ADHL) for use in behavioral simulation of manufacturing variations in a CMOS-MEMS gyroscope.

Asymptotically zero power charge-recycling bus architecture for battery-operated ultrahigh data rate ULSI's

NASA Astrophysics Data System (ADS)

Yamauchi, Hiroyuki; Akamatsu, Hironori; Fujita, Tsutomu

1995-04-01

An asymptotically zero power charge recycling bus (CRB) architecture, featuring virtual stacking of the individual bus-capacitance into a series configuration between supply voltage and ground, has been proposed. This CRB architecture makes it possible to reduce not only each bus-swing but also a total equivalent bus-capacitance of the ultramultibit buses running in parallel. The voltage swing of each bus is given by the recycled charge-supplying from the upper adjacent bus capacitance, instead of the power line. The dramatical power reduction was verified by the simulated and measured data. According to these data, the ultrahigh data rate of 25.6 Gb/s can be achieved while maintaining the power dissipation to be less than 100 mW, which corresponds to less than 10% that of the previously reported 0.9 V suppressed bus-swing scheme, at V(sub cc) = 3.6 V for the bus width of 512 b with the bus-capacitance of 14 pF per bit operating at 50 MHz.

Ultrasensitive and label-free detection of pathogenic avian influenza DNA by using CMOS impedimetric sensors.

PubMed

Lai, Wei-An; Lin, Chih-Heng; Yang, Yuh-Shyong; Lu, Michael S-C

2012-05-15

This work presents miniaturized CMOS (complementary metal oxide semiconductor) sensors for non-faradic impedimetric detection of AIV (avian influenza virus) oligonucleotides. The signal-to-noise ratio is significantly improved by monolithic sensor integration to reduce the effect of parasitic capacitances. The use of sub-μm interdigitated microelectrodes is also beneficial for promoting the signal coupling efficiency. Capacitance changes associated with surface modification, functionalization, and DNA hybridization were extracted from the measured frequency responses based on an equivalent-circuit model. Hybridization of the AIV H5 capture and target DNA probes produced a capacitance reduction of -13.2 ± 2.1% for target DNA concentrations from 1 fM to 10 fM, while a capacitance increase was observed when H5 target DNA was replaced with non-complementary H7 target DNA. With the demonstrated superior sensing capabilities, this miniaturized CMOS sensing platform shows great potential for label-free point-of-care biosensing applications. Copyright © 2012 Elsevier B.V. All rights reserved.

Temporal change in the electromechanical properties of dielectric elastomer minimum energy structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buchberger, G., E-mail: erda.buchberger@jku.at; Hauser, B.; Jakoby, B.

Dielectric elastomer minimum energy structures (DEMES) are soft electronic transducers and energy harvesters with potential for consumer goods. The temporal change in their electromechanical properties is of major importance for engineering tasks. Therefore, we study acrylic DEMES by impedance spectroscopy and by optical methods for a total time period of approx. 4.5 months. We apply either compliant electrodes from carbon black particles only or fluid electrodes from a mixture of carbon black particles and silicone oil. From the measurement data, the equivalent series capacitances and resistances as well as the bending angles of the transducers are obtained. We find thatmore » the equivalent series capacitances change in average between −12 %/1000 h and −4.0 %/1000 h, while the bending angles decrease linearly with slopes ranging from −15 %/1000 h to −7 %/1000 h. Transducers with high initial bending angles and electrodes from carbon black particles show the smallest changes of the electromechanical characteristics. The capacitances decrease faster for DEMES with fluid electrodes. Some DEMES of this type reveal huge and unpredictable fluctuations of the resistances over time due to the ageing of the contacts. Design guidelines for DEMES follow directly from the observed transient changes of their electromechanical performance.« less

Choroidal Thinning Associated With Hydroxychloroquine Retinopathy.

PubMed

Ahn, Seong Joon; Ryu, So Jung; Joung, Joo Young; Lee, Byung Ro

2017-11-01

To investigate choroidal thickness in patients using hydroxychloroquine (HCQ) and compare choroidal thickness between eyes with and without HCQ retinopathy. Retrospective case series. Setting: Institutional. We included 124 patients with systemic lupus erythematosus or rheumatoid arthritis who were treated with HCQ. The patients were divided into an HCQ retinopathy group and a control group, according to the presence or absence of HCQ retinopathy. Total choroidal thickness and choriocapillaris-equivalent thickness were measured manually by 2 independent investigators using swept-source optical coherence tomography (SS-OCT; DRI-OCT, Topcon Inc, Tokyo, Japan). These measurements were made at the fovea and at nasal and temporal locations 0.5, 1.5, and 3 mm from the fovea. Medium-to-large vessel layer thickness was calculated accordingly. The thicknesses were compared between the HCQ retinopathy and control groups. We performed correlation analyses between choroidal thicknesses and details regarding HCQ use. Total choroidal thickness and choriocapillaris-equivalent thickness. Choroidal thicknesses were significantly decreased (P < .05) in the HCQ retinopathy group compared to the control group, except at the temporal choroid 1.5 mm from the fovea. Choriocapillaris-equivalent thicknesses were significantly different in all choroidal locations between the groups. In contrast, the medium-to-large vessel layer thickness was only significantly different at a few locations. The cumulative dose/body weight was significantly correlated with subfoveal choroidal and choriocapillaris-equivalent thicknesses (both P = .001). The association between presence of HCQ retinopathy and choroidal thicknesses was also statistically significant after adjusting for age, diagnosis for HCQ use, refractive errors, and duration of HCQ use (P = .001 and P = .003 for subfoveal choroidal and choriocapillaris-equivalent thickness, respectively). These results all suggest that HCQ retinopathy is associated with choroidal thinning, especially in the choriocapillaris. Our results may suggest choroidal involvement of HCQ toxicity. Copyright © 2017 Elsevier Inc. All rights reserved.

A novel analytical description of periodic volume coil geometries in MRI

NASA Astrophysics Data System (ADS)

Koh, D.; Felder, J.; Shah, N. J.

2018-03-01

MRI volume coils can be represented by equivalent lumped element circuits and for a variety of these circuit configurations analytical design equations have been presented. The unification of several volume coil topologies results in a two-dimensional gridded equivalent lumped element circuit which compromises the birdcage resonator, its multiple endring derivative but also novel structures like the capacitive coupled ring resonator. The theory section analyzes a general two-dimensional circuit by noting that its current distribution can be decomposed into a longitudinal and an azimuthal dependency. This can be exploited to compare the current distribution with a transfer function of filter circuits along one direction. The resonances of the transfer function coincide with the resonance of the volume resonator and the simple analytical solution can be used as a design equation. The proposed framework is verified experimentally against a novel capacitive coupled ring structure which was derived from the general circuit formulation and is proven to exhibit a dominant homogeneous mode. In conclusion, a unified analytical framework is presented that allows determining the resonance frequency of any volume resonator that can be represented by a two dimensional meshed equivalent circuit.

Complex capacitance in the representation of modulus of the lithium niobate crystals

NASA Astrophysics Data System (ADS)

Alim, Mohammad A.; Batra, A. K.; Bhattacharjee, Sudip; Aggarwal, M. D.

2011-03-01

The lithium niobate (LiNbO 3 or LN) single crystal is grown in-house. The ac small-signal electrical characterization is conducted over a temperature range 35 ≤T≤150 °C as a function of measurement frequency (10 ≤f≤10 6 Hz). Meaningful observation is noted only in a narrow temperature range 59 ≤T≤73 °C. These electrical data when analyzed via complex plane formalisms revealed single semicircular relaxation both in the complex capacitance ( C*) and in the modulus ( M*) planes. The physical meaning of this kind of observation is obtained on identifying the relaxation type, and then incorporating respective equivalent circuit model. The simplistic non-blocking nature of the equivalent circuit model obtained via M*-plane is established as the lumped relaxation is identified in the C*-plane. The feature of the eventual equivalent circuit model allows non-blocking aspect for the LN crystal attributing to the presence of the operative dc conduction process. Identification of this leakage dc conduction via C*-plane is portrayed in the M*-plane where the blocking nature is removed. The interacting interpretation between these two complex planes is successfully presented.

Origin of colossal dielectric response of CaCu3Ti4O12 studied by using CaTiO3/CaCu3Ti4O12/CaTiO3 multilayer thin films

NASA Astrophysics Data System (ADS)

Mitsugi, Masakazu; Asanuma, Shutaro; Uesu, Yoshiaki; Fukunaga, Mamoru; Kobayashi, Wataru; Terasaki, Ichiro

2007-06-01

To elucidate the origin of the colossal dielectric response (CDR) of CaCu3Ti4O12 (CCTO), multilayer thin films of CCTO interposed in insulating CaTiO3 (CTO) were synthesized using a pulsed laser deposition technique. The capacitance C of CTO/CCTO/CTO films with different layer thicknesses is measured. After removing the capacitance of CTO by extrapolating C to zero CTO thickness, the real part of dielectric constant of CCTO is estimated to be 329-435, which is much smaller than the reported value for CCTO thin films. This fact indicates that the CDR of CCTO is extrinsic and originates from an internal barrier layer capacitor.

Design of interdigital spiral and concentric capacitive sensors for materials evaluation

NASA Astrophysics Data System (ADS)

Chen, Tianming; Bowler, Nicola

2013-01-01

This paper describes the design of two circular coplanar interdigital sensors with i) a spiral interdigital configuration and ii) a concentric interdigital configuration for the nondestructive evaluation of multilayered dielectric structures. A numerical model accounting for sensor geometry, test-piece geometry and real permittivity, and metal electrode thickness has been developed to calculate the capacitance of the sensors when in contact with a planar test-piece comprising up to four layers. Compared with a disk-and-ring coplanar capacitive sensor developed previously, the interdigital configurations are predicted to have higher signal-to-noise ratio and better accuracy in materials characterization. The disk-and-ring configuration, on the other hand, possesses advantages such as deeper penetration depth and better immunity to lift-off variations.

Ion Exchange Polymeric Coatings for Selective Capacitive Deionization

NASA Astrophysics Data System (ADS)

Jain, Amit; Kim, Jun; Li, Qilin; Verduzco, Rafael

Capacitive deionization (CDI) is an energy-efficient technology for adsorbing and removing scalants and foulants from water by utilizing electric potential between porous carbon electrodes. Currently, industrial application of CDI is limited to low salinity waters due to the limited absorption capacities of carbon electrodes. However, CDI can potentially be used as a low-cost approach to selectively remove divalent ions from high salinity water. Divalent ions such as sulfonates and carbonates cause scaling and thus performance deterioration of membrane-based desalination systems. In this work, we investigated ion-exchange polymer coatings for use in a membrane capacitive deionization (MCDI) process for selective removal of divalent ions. Poly-Vinyl Alcohol (PVA) base polymer was crosslinked and charged using sulfo-succinic acid (SSA) to give a cation exchange layer. 50 um thick standalone polymer films had a permeability of 4.25*10-7 cm2/s for 10mM NaCl feed. Experiments on electrodes with as low as 10 υm thick coating of cation exchange polymer are under progress and will be evaluated on the basis of their selective salt removal efficiency and charge efficiency, and in future we will extend this work to sulfonated block copolymers and anion exchange polymers.

Integrated on-chip solid state capacitor based on vertically aligned carbon nanofibers, grown using a CMOS temperature compatible process

NASA Astrophysics Data System (ADS)

Saleem, Amin M.; Andersson, Rickard; Desmaris, Vincent; Enoksson, Peter

2018-01-01

Complete miniaturized on-chip integrated solid-state capacitors have been fabricated based on conformal coating of vertically aligned carbon nanofibers (VACNFs), using a CMOS temperature compatible microfabrication processes. The 5 μm long VACNFs, operating as electrode, are grown on a silicon substrate and conformally coated by aluminum oxide dielectric using atomic layer deposition (ALD) technique. The areal (footprint) capacitance density value of 11-15 nF/mm2 is realized with high reproducibility. The CMOS temperature compatible microfabrication, ultra-low profile (less than 7 μm thickness) and high capacitance density would enables direct integration of micro energy storage devices on the active CMOS chip, multi-chip package and passives on silicon or glass interposer. A model is developed to calculate the surface area of VACNFs and the effective capacitance from the devices. It is thereby shown that 71% of surface area of the VACNFs has contributed to the measured capacitance, and by using the entire area the capacitance can potentially be increased.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Shang-Lung; Chu, Tieh-Chi; Lin, Yung-Chien

Purpose: Polymethylmethacrylate (PMMA) slab is one of the mostly used phantoms for studying breast dosimetry in mammography. The purpose of this study was to evaluate the equivalence between exposure factors acquired from PMMA slabs and patient cases of different age groups of Taiwanese women in mammography. Methods: This study included 3910 craniocaudal screen/film mammograms on Taiwanese women acquired on one mammographic unit. The tube loading, compressed breast thickness (CBT), compression force, tube voltage, and target/filter combination for each mammogram were collected for all patients. The glandularity and the equivalent thickness of PMMA were determined for each breast using the exposuremore » factors of the breast in combination with experimental measurements from breast-tissue-equivalent attenuation slabs. Equivalent thicknesses of PMMA to the breasts of Taiwanese women were then estimated. Results: The average {+-} standard deviation CBT and breast glandularity in this study were 4.2 {+-} 1.0 cm and 54% {+-} 23%, respectively. The average equivalent PMMA thickness was 4.0 {+-} 0.7 cm. PMMA slabs producing equivalent exposure factors as in the breasts of Taiwanese women were determined for the age groups 30-49 yr and 50-69 yr. For the 4-cm PMMA slab, the CBT and glandularity values of the equivalent breast were 4.1 cm and 65%, respectively, for the age group 30-49 yr and 4.4 cm and 44%, respectively, for the age group 50-69 yr. Conclusions: The average thickness of PMMA slabs producing the same exposure factors as observed in a large group of Taiwanese women is less than that reported for American women. The results from this study can provide useful information for determining a suitable thickness of PMMA for mammographic dose survey in Taiwan. The equivalence of PMMA slabs and the breasts of Taiwanese women is provided to allow average glandular dose assessment in clinical practice.« less

Characterization and modelling of a microstrip line loaded with complementary split-ring resonators (CSRRs) and its application to highpass filters

NASA Astrophysics Data System (ADS)

Li, C.; Li, Fang

2007-06-01

A method to characterize and model a microstrip line coupled with complementary split-ring resonators (CSRRs) is investigated. The detailed parameter extraction approach based on three characteristic frequencies is presented. Good agreement between the results of the equivalent circuit model and the full wave simulations supports the effectiveness of the proposed modelling methodology. In particular, it is found that the shunt capacitance in the equivalent circuit has a negative value which appears to contradict the general physical perception. The physical rationality of the problem is discussed and justified. It is found that the negative capacitance is a natural part required to approximate more closely the distributed nature of the CSRR-loaded microstrip line and the whole equivalent circuit still satisfies Foster's reactance theorem. To extract the effective permittivity of the CSRR-loaded microstrip, the dielectric window concept and the effective medium theory are both applied. Both their results show the negative permittivity at the vicinity of the resonance. Finally, the application of the CSRRs in microstip highpass filters is presented to highlight the unique features of the CSRRs and the validity of their equivalent circuit descriptions. Compared with conventional structures, the proposed highpass filters not only have via free structure but also exhibit extremely steep out-of-band rejection. This may lead to useful applications.

Hierarchically MnO2-Nanosheet Covered Submicrometer-FeCo2O4-Tube Forest as Binder-Free Electrodes for High Energy Density All-Solid-State Supercapacitors.

PubMed

Zhu, Baogang; Tang, Shaochun; Vongehr, Sascha; Xie, Hao; Meng, Xiangkang

2016-02-01

The current problem of the still relatively low energy densities of supercapacitors can be effectively addressed by designing electrodes hierarchically on micro- and nanoscale. Herein, we report the synthesis of hierarchically porous, nanosheet covered submicrometer tube forests on Ni foam. Chemical deposition and thermal treatment result in homogeneous forests of 750 nm diameter FeCo2O4 tubes, which after hydrothermal reaction in KMnO4 are wrapped in MnO2-nanosheet-built porous covers. The covers' thickness can be adjusted from 200 to 800 nm by KMnO4 concentration. An optimal thickness (380 nm) with a MnO2 content of 42 wt % doubles the specific capacitance (3.30 F cm(-2) at 1.0 mA cm(-2)) of the bare FeCo2O4-tube forests. A symmetric solid-state supercapacitor made from these binder-free electrodes achieves 2.52 F cm(-2) at 2 mA cm(-2), much higher than reported for capacitors based on similar core-shell nanowire arrays. The large capacitance and high cell voltage of 1.7 V allow high energy and power densities (93.6 Wh kg(-1), 10.1 kW kg(-1)). The device also exhibits superior rate capability (71% capacitance at 20 mA cm(-2)) and remarkable cycling stability with 94% capacitance retention being stable after 1500 cycles.

Control for monitoring thickness of high temperature refractory

DOEpatents

Caines, M.J.

1982-11-23

This invention teaches an improved monitoring device for detecting the changes in thickness of high-temperature refractory, the device consists of a probe having at least two electrically conductive generally parallel elements separated by a dielectric material. The probe is implanted or embedded directly in the refractory and is elongated to extend in line with the refractory thickness to be measured. Electrical inputs to the conductive elements provide that either or both the electrical conductance or capacitance can be found, so that charges over lapsed time periods can be compared in order to detect changes in the thickness of the refractory.

High-performance SEGISFET pH Sensor using the structure of double-gate a-IGZO TFTs with engineered gate oxides

NASA Astrophysics Data System (ADS)

Pyo, Ju-Young; Cho, Won-Ju

2017-03-01

In this paper, we propose a high-performance separative extended gate ion-sensitive field-effect transistor (SEGISFET) that consists of a tin dioxide (SnO2) SEG sensing part and a double-gate structure amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with tantalum pentoxide/silicon dioxide (Ta2O5/SiO2)-engineered top-gate oxide. To increase sensitivity, we maximized the capacitive coupling ratio by applying high-k dielectric at the top-gate oxide layer. As an engineered top-gate oxide, a stack of 25 nm-thick Ta2O5 and 10 nm-thick SiO2 layers was found to simultaneously satisfy a small equivalent oxide thickness (˜17.14 nm), a low leakage current, and a stable interfacial property. The threshold-voltage instability, which is a fundamental issue in a-IGZO TFTs, was improved by low-temperature post-deposition annealing (˜87 °C) using microwave irradiation. The double-gate structure a-IGZO TFTs with engineered top-gate oxide exhibited high mobility, small subthreshold swing, high drive current, and larger on/off current ratio. The a-IGZO SEGISFETs with a dual-gate sensing mode showed a pH sensitivity of 649.04 mV pH-1, which is far beyond the Nernst limit. The non-ideal behavior of ISFETs, hysteresis, and drift effect also improved. These results show that the double-gate structure a-IGZO TFTs with engineered top-gate oxide can be a good candidate for cheap and disposable SEGISFET sensors.

Structural and dielectric properties of thin ZrO2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor

NASA Astrophysics Data System (ADS)

Niinistö, J.; Putkonen, M.; Niinistö, L.; Kukli, K.; Ritala, M.; Leskelä, M.

2004-01-01

ZrO2 thin films with thicknesses below 20 nm were deposited by the atomic layer deposition process on Si(100) substrates at 350 °C. An organometallic precursor, Cp2Zr(CH3)2 (Cp=cyclopentadienyl, C5H5) was used as the zirconium source and water or ozone as oxygen source. The influence of oxygen source and substrate pretreatment on the dielectric properties of ZrO2 films was investigated. Structural characterization with high-resolution transmission electron microscopy was performed to films grown onto HF-etched or native oxide covered silicon. Strong inhibition of ZrO2 film growth was observed with the water process on HF-etched Si. Ozone process on HF-etched Si resulted in interfacial SiO2 formation between the dense and uniform film and the substrate while water process produced interfacial layer with intermixing of SiO2 and ZrO2. The effective permittivity of ZrO2 in Al/ZrO2/Si/Al capacitor structures was dependent on the ZrO2 layer thickness and oxygen source used. The interfacial layer formation increased the capacitance equivalent oxide thickness (CET). CET of 2.0 nm was achieved with 5.9 nm ZrO2 film deposited with the H2O process on HF-stripped Si. The ozone-processed films showed good dielectric properties such as low hysteresis and nearly ideal flatband voltage. The leakage current density was lower and breakdown field higher for the ozone-processed ZrO2 films.

Ternary carbon composite films for supercapacitor applications

NASA Astrophysics Data System (ADS)

Tran, Minh-Hai; Jeong, Hae Kyung

2017-09-01

A simple, binder-free, method of making supercapacitor electrodes is introduced, based on modification of activated carbon with graphite oxide and carbon nanotubes. The three carbon precursors of different morphologies support each other to provide outstanding electrochemical performance, such as high capacitance and high energy density. The ternary carbon composite shows six times higher specific capacitance compared to that of activated carbon itself with high retention. The excellent electrochemical properties of the ternary composite attribute to the high surface area of 1933 m2 g-1 and low equivalent series resistance of 2 Ω, demonstrating that it improve the electrochemical performance for supercapacitor applications.

Electron series resonance in a magnetized 13.56 MHz symmetric capacitive coupled discharge

NASA Astrophysics Data System (ADS)

Joshi, J. K.; Binwal, S.; Karkari, S. K.; Kumar, Sunil

2018-03-01

A 13.56 MHz capacitive coupled radio-frequency (RF) argon discharge under transverse magnetic field has been investigated. The discharge is operated in a push-pull mode using a 1:1 isolation transformer with its centre tap grounded to a RF generator. The power delivered to the plasma has been calculated from phase-calibrated RF current/voltage waveforms measured on the secondary side of the isolation transformer. An equivalent electrical circuit of the discharge has been described to determine the net plasma impedance. It is found that in the presence of magnetic field, the discharge impedance exhibits a series resonance as the RF power level is increased gradually. However, in the un-magnetized case, the discharge remains entirely capacitive. A qualitative discussion has been given to explain the role of external magnetic field in achieving the series resonance.

Investigation and Modeling of Capacitive Human Body Communication.

PubMed

Zhu, Xiao-Qi; Guo, Yong-Xin; Wu, Wen

2017-04-01

This paper presents a systematic investigation of the capacitive human body communication (HBC). The measurement of HBC channels is performed using a novel battery-powered system to eliminate the effects of baluns, cables and instruments. To verify the measured results, a numerical model incorporating the entire HBC system is established. Besides, it is demonstrated that both the impedance and path gain bandwidths of HBC channels is affected by the electrode configuration. Based on the analysis of the simulated electric field distribution, an equivalent circuit model is proposed and the circuit parameters are extracted using the finite element method. The transmission capability along the human body is also studied. The simulated results using the numerical and circuit models coincide very well with the measurement, which demonstrates that the proposed circuit model can effectively interpret the operation mechanism of the capacitive HBC.

Epitaxial GeSn film formed by solid phase epitaxy and its application to Yb{sub 2}O{sub 3}-gated GeSn metal-oxide-semiconductor capacitors with sub-nm equivalent oxide thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Ching-Wei; Wu, Yung-Hsien; Hsieh, Ching-Heng

2014-11-17

Through the technique of solid phase epitaxy (SPE), an epitaxial Ge{sub 0.955}Sn{sub 0.045} film was formed on a Ge substrate by depositing an amorphous GeSn film followed by a rapid thermal annealing at 550 °C. A process that uses a SiO{sub 2} capping layer on the amorphous GeSn film during SPE was proposed and it prevents Sn precipitation from occurring while maintaining a smooth surface due to the reduced surface mobility of Sn atoms. The high-quality epitaxial GeSn film was observed to have single crystal structure, uniform thickness and composition, and tiny surface roughness with root mean square of 0.56 nm. Withmore » a SnO{sub x}-free surface, Yb{sub 2}O{sub 3}-gated GeSn metal-oxide-semiconductor (MOS) capacitors with equivalent oxide thickness (EOT) of 0.55 nm were developed. A small amount of traps inside the Yb{sub 2}O{sub 3} was verified by negligible hysteresis in capacitance measurement. Low leakage current of 0.4 A/cm{sup 2} at gate bias of flatband voltage (V{sub FB})-1 V suggests the high quality of the gate dielectric. In addition, the feasibility of using Yb{sub 2}O{sub 3} to well passivate GeSn surface was also evidenced by the small interface trap density (D{sub it}) of 4.02 × 10{sup 11} eV{sup −1} cm{sup −2}, which can be attributed to smooth GeSn surface and Yb{sub 2}O{sub 3} valency passivation. Both leakage current and D{sub it} performance outperform other passivation techniques at sub-nm EOT regime. The proposed epitaxial GeSn film along with Yb{sub 2}O{sub 3} dielectric paves an alternative way to enable high-performance GeSn MOS devices.« less

Characterization of screen-printed electrodes for dielectric elastomer (DE) membranes: influence of screen dimensions and electrode thickness on actuator performance

NASA Astrophysics Data System (ADS)

Fasolt, Bettina; Hodgins, Micah; Seelecke, Stefan

2016-04-01

Screen printing is used as a method for printing electrodes on silicone thin films for the fabrication of dielectric elastomer transducers (DET). This method can be used to manufacture a multitude of patternable designs for actuator and sensor applications, implementing the same method for prototyping as well as large-scale production. The fabrication of DETs does not only require the development of a flexible, highly conductive electrode material, which adheres to a stretched and unstretched silicone film, but also calls for a thorough understanding of the effects of the different printing parameters. This work studies the influence of screen dimensions (open area, mesh thickness) as well as the influence of multiple-layer- printing on the electrode stiffness, electrical resistance and capacitance as well as actuator performance. The investigation was conducted in a custom-built testing device, which enabled an electro-mechanical characterization of the DET, simultaneously measuring parameters such as strain, voltage, current, force, sheet resistance, capacitance and membrane thickness. Magnified pictures of the electrodes will additionally illustrate the effects of the different printing parameters.

LaAlO{sub 3} thickness window for electronically controlled magnetism at LaAlO{sub 3}/SrTiO{sub 3} heterointerfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bi, Feng; Huang, Mengchen; Irvin, Patrick

2015-08-24

Complex-oxide heterostructures exhibit rich physical behavior such as emergent conductivity, superconductivity, and magnetism that are intriguing for scientific reasons as well as for potential technological applications. It was recently discovered that in-plane magnetism at the LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) interface can be electronically controlled at room temperature. Here, we employ magnetic force microscopy to investigate electronically controlled ferromagnetism at the LAO/STO interface with LAO thickness t varied from 4 unit cell (u.c.) to 40 u.c. Magnetic signatures are observed only within a thickness window 8 u.c. ≤ t ≤ 25 u.c. Within this window, the device capacitance corresponds well to the expected geometric value, while for thicknessesmore » outside this window, the capacitance is strongly suppressed. The ability to modulate electronic and magnetic properties of LAO/STO devices depends on the ability to control carrier density, which is in turn constrained by intrinsic tunneling mechanisms.« less

Eddy current measurement of the thickness of top Cu film of the multilayer interconnects in the integrated circuit (IC) manufacturing process

NASA Astrophysics Data System (ADS)

Qu, Zilian; Meng, Yonggang; Zhao, Qian

2015-03-01

This paper proposes a new eddy current method, named equivalent unit method (EUM), for the thickness measurement of the top copper film of multilayer interconnects in the chemical mechanical polishing (CMP) process, which is an important step in the integrated circuit (IC) manufacturing. The influence of the underneath circuit layers on the eddy current is modeled and treated as an equivalent film thickness. By subtracting this equivalent film component, the accuracy of the thickness measurement of the top copper layer with an eddy current sensor is improved and the absolute error is 3 nm for sampler measurement.

Equivalent circuit simulation of cylindrical monopole impedance measurements in ionospheric electron plasma

NASA Astrophysics Data System (ADS)

Kiraga, A.

Several common problems occur in measurement techniques and interpretation of plasma natural emissions and impedance data. Antenna characteristics are of prime importance in equivalent circuit analysis. Spacecraft - plasma interaction contributes to variability of equivalent circuit impedances and e.m.f. components and imposes constrains on usefulness of experimental data. In order to have independent, built in estimate of local plasma frequency and to get deeper insight into properties of equivalent circuit for wave diagnostics, impedance measurement was integrated with radio receivers on the ACTIVE, APEX and CORONAS satellites. Impedance measurements of 7.5m long monopole were performed in frequency range .1-10MHz with the frequency step of 50kHz, in voltage divider configuration. Due to high inclination of 82.5deg and altitude range of 500-3000km, data from very different plasmas were collected. Data can be split into quasi normal, disturbed and very disturbed measurements. Equivalent circuit structure evolved in attempt to m tcha even very disturbed measurements. For quasi normal measurements, satisfactory matching is obtained with computed gyrofrequency fc and fitted plasma frequency fn, stray capacitance Cs and capacitance Cv of phenomenological vacuum sheath. With Balmain formula for monopole impedance in cold magnetoplasma, two basic spectral structures are explained. For sufficiently magnetized plasma (roughly fn/fc<2 if Cs=20pF), circuit parallel resonance frequency Fr falls into upper hybrid band (max(fn,fc),fu), resonance amplitude is reduced by high antenna resistance and horn like absolute maximum points fu. For values of fn/fc ratio, greater then critical, Fr is less than fn and broad absolute maximum at Fr follows from low antenna resistance. Further increase of fn/fc results in increasing lag of Fr behind fn. Critical rati o fn/fc increases with decreasing stray capacitance Cs. It follows from data analysis that stray capacitance may change in flight, at least due to attitude changes, so mentioned basic structures may be relevant in stray compensated bridge configuration. It is found that strongly disturbed measurements are related to activation of fast diodes, designed for input protection. Injections of charged particle beams saturated instrument. On line telemetry transmission interfered directly by receipted VHF fields and indirectly by particle acceleration leading to differential charging and direct current flow. In dense equatorial plasma, very peculiar evolution of base voltage spectra is linked to differential charging and intense direct current flow of thermal electrons. Deep, quasi periodic modulations or irregular excursions on time scales much shorter than sweep period are indicative of differential charging by ambient, energetic minor populations. Presented data and simulations address challenges in instrument design, monitoring and onboard data processing.

Moving towards high-power, high-frequency and low-resistance CNT supercapacitors by tuning the CNT length, axial deformation and contact resistance

NASA Astrophysics Data System (ADS)

Basiricò, L.; Lanzara, G.

2012-08-01

In this paper it is shown that the electrochemical behaviour of vertically aligned multi-walled carbon nanotube (VANT) supercapacitors is influenced by the VANTs’ length (electrode thickness), by their axial compression and by their interface with the current collector. It is found that the VANTs, which can be interpreted as a dense array of nanochannels, have an active area available to ions that is strongly affected by the electrode’s thickness and compressional state. Consequently, the tested thinner electrodes, compressed electrodes or a combination of the two were found to be characterized by a significant improvement in terms of power density (up to 1246%), knee frequency (58 822% working up to 10 kHz), equivalent series resistance (ESR, up to 67%) and capacitance (up to 21%) when compared with thicker and/or uncompressed electrodes. These values are significantly higher than those reported in the literature where long VANTs with no control on compression are typically used. It is also shown that the ESR can be reduced not only by using shorter and compressed VANTs that have a higher conductance or by improving the electrode/collector electrical contact by changing the contact morphology at the nanoscale through compression, but also by depositing a thin platinum layer on the VANT tips in contact with the current collector (73% ESR decrease).

Moving towards high-power, high-frequency and low-resistance CNT supercapacitors by tuning the CNT length, axial deformation and contact resistance.

PubMed

Basiricò, L; Lanzara, G

2012-08-03

In this paper it is shown that the electrochemical behaviour of vertically aligned multi-walled carbon nanotube (VANT) supercapacitors is influenced by the VANTs' length (electrode thickness), by their axial compression and by their interface with the current collector. It is found that the VANTs, which can be interpreted as a dense array of nanochannels, have an active area available to ions that is strongly affected by the electrode's thickness and compressional state. Consequently, the tested thinner electrodes, compressed electrodes or a combination of the two were found to be characterized by a significant improvement in terms of power density (up to 1246%), knee frequency (58,822% working up to 10 kHz), equivalent series resistance (ESR, up to 67%) and capacitance (up to 21%) when compared with thicker and/or uncompressed electrodes. These values are significantly higher than those reported in the literature where long VANTs with no control on compression are typically used. It is also shown that the ESR can be reduced not only by using shorter and compressed VANTs that have a higher conductance or by improving the electrode/collector electrical contact by changing the contact morphology at the nanoscale through compression, but also by depositing a thin platinum layer on the VANT tips in contact with the current collector (73% ESR decrease).

Direct measurement of exciton dissociation energy in polymers

NASA Astrophysics Data System (ADS)

Toušek, J.; Toušková, J.; Chomutová, R.; Paruzel, B.; Pfleger, J.

2017-01-01

Exciton dissociation energy was obtained based on the comparison of thickness of the space charge region estimated from the measurement of capacitance of prepared Schottky diode and from the measurement of photovoltage spectra. While the capacitance measurements provide information about the total width of the space charge region (SCR) the surface photovoltaic effect brings information only about the part of the SCR where electric field is sufficiently high to cause dissociation. For determination of the dissociation energy it is sufficient to find the electric potential in the SCR where the process starts.

Parametric analysis of hollow conductor parallel and coaxial transmission lines for high frequency space power distribution

NASA Technical Reports Server (NTRS)

Jeffries, K. S.; Renz, D. D.

1984-01-01

A parametric analysis was performed of transmission cables for transmitting electrical power at high voltage (up to 1000 V) and high frequency (10 to 30 kHz) for high power (100 kW or more) space missions. Large diameter (5 to 30 mm) hollow conductors were considered in closely spaced coaxial configurations and in parallel lines. Formulas were derived to calculate inductance and resistance for these conductors. Curves of cable conductance, mass, inductance, capacitance, resistance, power loss, and temperature were plotted for various conductor diameters, conductor thickness, and alternating current frequencies. An example 5 mm diameter coaxial cable with 0.5 mm conductor thickness was calculated to transmit 100 kW at 1000 Vac, 50 m with a power loss of 1900 W, an inductance of 1.45 micron and a capacitance of 0.07 micron-F. The computer programs written for this analysis are listed in the appendix.

The edge- and basal-plane-specific electrochemistry of a single-layer graphene sheet

PubMed Central

Yuan, Wenjing; Zhou, Yu; Li, Yingru; Li, Chun; Peng, Hailin; Zhang, Jin; Liu, Zhongfan; Dai, Liming; Shi, Gaoquan

2013-01-01

Graphene has a unique atom-thick two-dimensional structure and excellent properties, making it attractive for a variety of electrochemical applications, including electrosynthesis, electrochemical sensors or electrocatalysis, and energy conversion and storage. However, the electrochemistry of single-layer graphene has not yet been well understood, possibly due to the technical difficulties in handling individual graphene sheet. Here, we report the electrochemical behavior at single-layer graphene-based electrodes, comparing the basal plane of graphene to its edge. The graphene edge showed 4 orders of magnitude higher specific capacitance, much faster electron transfer rate and stronger electrocatalytic activity than those of graphene basal plane. A convergent diffusion effect was observed at the sub-nanometer thick graphene edge-electrode to accelerate the electrochemical reactions. Coupling with the high conductivity of a high-quality graphene basal plane, graphene edge is an ideal electrode for electrocatalysis and for the storage of capacitive charges. PMID:23896697

Impedance characterization of AlGaN/GaN Schottky diodes with metal contacts

NASA Astrophysics Data System (ADS)

Donahue, M.; Lübbers, B.; Kittler, M.; Mai, P.; Schober, A.

2013-04-01

To obtain detailed information on structural and electrical properties of AlGaN/GaN Schottky diodes and to determine an appropriate equivalent circuit, impedance spectroscopy and impedance voltage profiling are employed over a frequency range of 1 MHz-1 Hz. In contrast to the commonly assumed parallel connection of capacitive and resistive elements, an equivalent circuit is derived from impedance spectra which utilizes the constant phase element and accounts for frequency dispersion and trap states. The trap density is estimated and is in good agreement with the literature values. The resulting reduced equivalent circuit consists of a capacitor and resistor connected in series.

Titanium nitride films for micro-supercapacitors: Effect of surface chemistry and film morphology on the capacitance

NASA Astrophysics Data System (ADS)

Achour, Amine; Porto, Raul Lucio; Soussou, Mohamed-Akram; Islam, Mohammad; Boujtita, Mohammed; Aissa, Kaltouma Ait; Le Brizoual, Laurent; Djouadi, Abdou; Brousse, Thierry

2015-12-01

Electrochemical capacitors (EC) in the form of packed films can be integrated in various electronic devices as power source. A fabrication process of EC electrodes, which is compatible with micro-fabrication, should be addressed for practical applications. Here, we show that titanium nitride films with controlled porosity can be deposited on flat silicon substrates by reactive DC-sputtering for use as high performance micro-supercapacitor electrodes. A superior volumetric capacitance as high as 146.4 F cm-3, with an outstanding cycling stability over 20,000 cycles, was measured in mild neutral electrolyte of potassium sulfate. The specific capacitance of the films as well as their capacitance retentions were found to depend on thickness, porosity and surface chemistry of electrodes. The one step process used to fabricate these TiN electrodes and the wide use of this material in the field of semiconductor technology make it promising for miniaturized energy storage systems.

Electrochemical performance of microporous and mesoporous activated carbons in neat and diluted 1-ethyl-3-methylimidazolium tetrafluoroborate

NASA Astrophysics Data System (ADS)

Kumagai, Seiji; Hatomi, Masaki; Tashima, Daisuke

2017-03-01

1-Ethyl-3-methylimidazolium tetrafluoroborate (EMIm·BF4), neat and diluted with propylene carbonate to 1 mol L-1, have been employed as electrolytes of electrical double-layer capacitors (EDLCs). The effects of microporosity and mesoporosity in activated carbon (AC) electrodes on the capacitive and resistive performances upon the use of neat and diluted EMIm·BF4 have been explored. In addition to cyclic voltammetry and galvanostatic charge-discharge tests, electrochemical impedance spectroscopy has been performed employing Kang's equivalent circuit model consisting of three resistances, three constant phase elements, and one bounded Warburg impedance. The overall impedance of the EDLC cell was separated into components of intrinsic resistance, bulk electrolyte, diffusion layer, and Helmholtz layer. The specific capacitance and the equivalent series resistance (ESR) of mesoporous AC were found to be highly dependent on the rate of ionic transfer. Lower cell voltage was identified as being responsible for lower specific capacitance and larger ESR of mesoporous AC, which was similarly seen in the neat and diluted EMIm·BF4, and could be alleviated by increasing the cell voltage. The inferior rate performance and the cell-voltage-dependent performance of mesoporous AC, which were more distinctly observed in the neat EMIm·BF4, could be attributed to the lower mobility of EMIm+ and BF4- in mesopores.

Naphthalenetetracarboxylic diimide layer-based transistors with nanometer oxide and side chain dielectrics operating below one volt.

PubMed

Jung, Byung Jun; Martinez Hardigree, Josue F; Dhar, Bal Mukund; Dawidczyk, Thomas J; Sun, Jia; See, Kevin Cua; Katz, Howard E

2011-04-26

We designed a new naphthalenetetracarboxylic diimide (NTCDI) semiconductor molecule with long fluoroalkylbenzyl side chains. The side chains, 1.2 nm long, not only aid in self-assembly and kinetically stabilize injected electrons but also act as part of the gate dielectric in field-effect transistors. On Si substrates coated only with the 2 nm thick native oxide, NTCDI semiconductor films were deposited with thicknesses from 17 to 120 nm. Top contact Au electrodes were deposited as sources and drains. The devices showed good transistor characteristics in air with 0.1-1 μA of drain current at 0.5 V of V(G) and V(DS) and W/L of 10-20, even though channel width (250 μm) is over 1000 times the distance (20 nm) between gate and drain electrodes. The extracted capacitance-times-mobility product, an expression of the sheet transconductance, can exceed 100 nS V(-1), 2 orders of magnitude higher than typical organic transistors. The vertical low-frequency capacitance with gate voltage applied in the accumulation regime reached as high as 650 nF/cm(2), matching the harmonic sum of capacitances of the native oxide and one side chain and indicating that some gate-induced carriers in such devices are distributed among all of the NTCDI core layers, although the preponderance of the carriers are still near the gate electrode. Besides demonstrating and analyzing thickness-dependent NTCDI-based transistor behavior, we also showed <1 V detection of dinitrotoluene vapor by such transistors.

Common source cascode amplifiers for integrating IR-FPA applications

NASA Technical Reports Server (NTRS)

Woolaway, James T.; Young, Erick T.

1989-01-01

Space based astronomical infrared measurements present stringent performance requirements on the infrared detector arrays and their associated readout circuitry. To evaluate the usefulness of commercial CMOS technology for astronomical readout applications a theoretical and experimental evaluation was performed on source follower and common-source cascode integrating amplifiers. Theoretical analysis indicates that for conditions where the input amplifier integration capacitance is limited by the detectors capacitance the input referred rms noise electrons of each amplifier should be equivalent. For conditions of input gate limited capacitance the source follower should provide lower noise. Measurements of test circuits containing both source follower and common source cascode circuits showed substantially lower input referred noise for the common-source cascode input circuits. Noise measurements yielded 4.8 input referred rms noise electrons for an 8.5 minute integration. The signal and noise gain of the common-source cascode amplifier appears to offer substantial advantages in acheiving predicted noise levels.

Electrical description of N2 capacitively coupled plasmas with the global model

NASA Astrophysics Data System (ADS)

Cao, Ming-Lu; Lu, Yi-Jia; Cheng, Jia; Ji, Lin-Hong; Engineering Design Team

2016-10-01

N2 discharges in a commercial capacitively coupled plasma reactor are modelled by a combination of an equivalent circuit and the global model, for a range of gas pressure at 1 4 Torr. The ohmic and inductive plasma bulk and the capacitive sheath are represented as LCR elements, with electrical characteristics determined by plasma parameters. The electron density and electron temperature are obtained from the global model in which a Maxwellian electron distribution is assumed. Voltages and currents are recorded by a VI probe installed after the match network. Using the measured voltage as an input, the current flowing through the discharge volume is calculated from the electrical model and shows excellent agreement with the measurements. The experimentally verified electrical model provides a simple and accurate description for the relationship between the external electrical parameters and the plasma properties, which can serve as a guideline for process window planning in industrial applications.

Comprehensive electrical analysis of metal/Al2O3/O-terminated diamond capacitance

NASA Astrophysics Data System (ADS)

Pham, T. T.; Maréchal, A.; Muret, P.; Eon, D.; Gheeraert, E.; Rouger, N.; Pernot, J.

2018-04-01

Metal oxide semiconductor capacitors were fabricated using p - type oxygen-terminated (001) diamond and Al2O3 deposited by atomic layer deposition at two different temperatures 250 °C and 380 °C. Current voltage I(V), capacitance voltage C(V), and capacitance frequency C(f) measurements were performed and analyzed for frequencies ranging from 1 Hz to 1 MHz and temperatures from 160 K to 360 K. A complete model for the Metal-Oxide-Semiconductor Capacitors electrostatics, leakage current mechanisms through the oxide into the semiconductor and small a.c. signal equivalent circuit of the device is proposed and discussed. Interface states densities are then evaluated in the range of 1012eV-1cm-2 . The strong Fermi level pinning is demonstrated to be induced by the combined effects of the leakage current through the oxide and the presence of diamond/oxide interface states.

Tunable Impedance Spectroscopy Sensors via Selective Nanoporous Materials.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nenoff, Tina M.; Small, Leo J

Impedance spectroscopy was leveraged to directly detect the sorption of I 2 by selective adsorption into nanoporous metal organic frameworks (MOF). Films of three different types of MOF frameworks, respectively, were drop cast onto platinum interdigitated electrodes, dried, and exposed to gaseous I 2 at 25, 40, or 70 C. The MOF frameworks varied in topology from small pores (equivalent to I 2 diameter) to large pore frameworks. The combination of the chemistry of the framework and pore size dictated quantity and kinetics of I 2 adsorption. Air, argon, methanol, and water were found to produce minimal changes in ZIF-8more » impedance. Independent of MOF framework characteristics, all resultant sensors showed high response to I 2 in air. As an example of sensor output, I 2 was readily detected at 25 C in air within 720 s of exposure, using an un-optimized sensor geometry with a small pored MOF. Further optimization of sensor geometry, decreasing MOF film thicknesses and maximizing sensor capacitance, will enable faster detection of trace I 2 .« less

Design of 3D Graphene-Oxide Spheres and Their Derived Hierarchical Porous Structures for High Performance Supercapacitors.

PubMed

Li, Zhuangnan; Gadipelli, Srinivas; Yang, Yuchen; Guo, Zhengxiao

2017-11-01

Graphene-oxide (GO) based porous structures are highly desirable for supercapacitors, as the charge storage and transfer can be enhanced by advancement in the synthesis. An effective route is presented of, first, synthesis of three-dimensional (3D) assembly of GO sheets in a spherical architecture (GOS) by flash-freezing of GO dispersion, and then development of hierarchical porous graphene (HPG) networks by facile thermal-shock reduction of GOS. This leads to a superior gravimetric specific capacitance of ≈306 F g -1 at 1.0 A g -1 , with a capacitance retention of 93% after 10 000 cycles. The values represent a significant capacitance enhancement by 30-50% compared with the GO powder equivalent, and are among the highest reported for GO-based structures from different chemical reduction routes. Furthermore, a solid-state flexible supercapacitor is fabricated by constructing the HPG with polymer gel electrolyte, exhibiting an excellent areal specific capacitance of ≈220 mF cm -2 at 1.0 mA cm -2 with exceptional cyclic stability. The work reveals a facile but efficient synthesis approach of GO-based materials to enhance the capacitive energy storage. © 2017 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Label-free capacitive immunosensor based on quartz crystal Au electrode for rapid and sensitive detection of Escherichia coli O157:H7.

PubMed

Li, Dujuan; Feng, Yangyang; Zhou, Ling; Ye, Zunzhong; Wang, Jianping; Ying, Yibin; Ruan, Chuanmin; Wang, Ronghui; Li, Yanbin

2011-02-14

A label-free capacitive immunosensor based on quartz crystal Au electrode was developed for rapid and sensitive detection of Escherichia coli O157:H7. The immunosensor was fabricated by immobilizing affinity-purified anti-E. coli O157:H7 antibodies onto self-assembled monolayers (SAMs) of 3-mercaptopropionic acid (MPA) on the surface of a quartz crystal Au electrode. Bacteria suspended in solution became attached to the immobilized antibodies when the immunosensor was tested in liquid samples. The change in capacitance caused by the bacteria was directly measured by an electrochemical detector. An equivalent circuit was introduced to simulate the capacitive immunosensor. The immunosensor was evaluated for E. coli O157:H7 detection in pure culture and inoculated food samples. The experimental results indicated that the capacitance change was linearly correlated with the cell concentration of E. coli O157:H7. The immunosensor was able to discriminate between cellular concentrations of 10(2)-10(5) cfu mL(-1) and has applications in detecting pathogens in food samples. Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) were also employed to characterize the stepwise assembly of the immunosensor. Copyright © 2010 Elsevier B.V. All rights reserved.

Polyimide-Based Capacitive Humidity Sensor

PubMed Central

Steinmaßl, Matthias; Endres, Hanns-Erik; Drost, Andreas; Eisele, Ignaz; Kutter, Christoph; Müller-Buschbaum, Peter

2018-01-01

The development of humidity sensors with simple transduction principles attracts considerable interest by both scientific researchers and industrial companies. Capacitive humidity sensors, based on polyimide sensing material with different thickness and surface morphologies, are prepared. The surface morphology of the sensing layer is varied from flat to rough and then to nanostructure called nanograss by using an oxygen plasma etch process. The relative humidity (RH) sensor selectively responds to the presence of water vapor by a capacitance change. The interaction between polyimide and water molecules is studied by FTIR spectroscopy. The complete characterization of the prepared capacitive humidity sensor performance is realized using a gas mixing setup and an evaluation kit. A linear correlation is found between the measured capacitance and the RH level in the range of 5 to 85%. The morphology of the humidity sensing layer is revealed as an important parameter influencing the sensor performance. It is proved that a nanograss-like structure is the most effective for detecting RH, due to its rapid response and recovery times, which are comparable to or even better than the ones of commercial polymer-based sensors. This work demonstrates the readiness of the developed RH sensor technology for industrialization. PMID:29751632

3-Axis Fully-Integrated Capacitive Tactile Sensor with Flip-Bonded CMOS on LTCC Interposer.

PubMed

Asano, Sho; Muroyama, Masanori; Nakayama, Takahiro; Hata, Yoshiyuki; Nonomura, Yutaka; Tanaka, Shuji

2017-10-25

This paper reports a 3-axis fully integrated differential capacitive tactile sensor surface-mountable on a bus line. The sensor integrates a flip-bonded complementary metal-oxide semiconductor (CMOS) with capacitive sensing circuits on a low temperature cofired ceramic (LTCC) interposer with Au through vias by Au-Au thermo-compression bonding. The CMOS circuit and bonding pads on the sensor backside were electrically connected through Au bumps and the LTCC interposer, and the differential capacitive gap was formed by an Au sealing frame. A diaphragm for sensing 3-axis force was formed in the CMOS substrate. The dimensions of the completed sensor are 2.5 mm in width, 2.5 mm in length, and 0.66 mm in thickness. The fabricated sensor output coded 3-axis capacitive sensing data according to applied 3-axis force by three-dimensional (3D)-printed pins. The measured sensitivity was as high as over 34 Count/mN for normal force and 14 to 15 Count/mN for shear force with small noise, which corresponds to less than 1 mN. The hysteresis and the average cross-sensitivity were also found to be less than 2% full scale and 11%, respectively.

A Micromachined Capacitive Pressure Sensor Using a Cavity-Less Structure with Bulk-Metal/Elastomer Layers and Its Wireless Telemetry Application

PubMed Central

Takahata, Kenichi; Gianchandani, Yogesh B.

2008-01-01

This paper reports a micromachined capacitive pressure sensor intended for applications that require mechanical robustness. The device is constructed with two micromachined metal plates and an intermediate polymer layer that is soft enough to deform in a target pressure range. The plates are formed of micromachined stainless steel fabricated by batch-compatible micro-electro-discharge machining. A polyurethane room-temperature-vulcanizing liquid rubber of 38-μm thickness is used as the deformable material. This structure eliminates both the vacuum cavity and the associated lead transfer challenges common to micromachined capacitive pressure sensors. For frequency-based interrogation of the capacitance, passive inductor-capacitor tanks are fabricated by combining the capacitive sensor with an inductive coil. The coil has 40 turns of a 127-μm-diameter copper wire. Wireless sensing is demonstrated in liquid by monitoring the variation in the resonant frequency of the tank via an external coil that is magnetically coupled with the tank. The sensitivity at room temperature is measured to be 23-33 ppm/KPa over a dynamic range of 340 KPa, which is shown to match a theoretical estimation. Temperature dependence of the tank is experimentally evaluated. PMID:27879824

3-Axis Fully-Integrated Capacitive Tactile Sensor with Flip-Bonded CMOS on LTCC Interposer †

PubMed Central

Asano, Sho; Nakayama, Takahiro; Hata, Yoshiyuki; Tanaka, Shuji

2017-01-01

This paper reports a 3-axis fully integrated differential capacitive tactile sensor surface-mountable on a bus line. The sensor integrates a flip-bonded complementary metal-oxide semiconductor (CMOS) with capacitive sensing circuits on a low temperature cofired ceramic (LTCC) interposer with Au through vias by Au-Au thermo-compression bonding. The CMOS circuit and bonding pads on the sensor backside were electrically connected through Au bumps and the LTCC interposer, and the differential capacitive gap was formed by an Au sealing frame. A diaphragm for sensing 3-axis force was formed in the CMOS substrate. The dimensions of the completed sensor are 2.5 mm in width, 2.5 mm in length, and 0.66 mm in thickness. The fabricated sensor output coded 3-axis capacitive sensing data according to applied 3-axis force by three-dimensional (3D)-printed pins. The measured sensitivity was as high as over 34 Count/mN for normal force and 14 to 15 Count/mN for shear force with small noise, which corresponds to less than 1 mN. The hysteresis and the average cross-sensitivity were also found to be less than 2% full scale and 11%, respectively. PMID:29068429

On the design of capacitive sensors using flexible electrodes for multipurpose measurements

NASA Astrophysics Data System (ADS)

Thibault, Pierre; Diribarne, Pantxo; Fournier, Thierry; Perraud, Sylvain; Puech, Laurent; Wolf, P.-Etienne; Rousset, Bernard; Vallcorba, Roser

2007-04-01

This article evaluates the potential of capacitive measurements using flexible electrodes to access various physical quantities. These electrodes are made of a thin metallic film, typical thickness 0.2 μm, evaporated on a plastic substrate. Their large flexibility enables them to be mounted in complex geometries such as curved surfaces. In the configuration of planar condensers, using a very sensitive commercial capacitive bridge and a three-terminal measurement method, several measurements are presented. A relative resolution of 10-8 for the thermal expansion of samples is obtained at low temperature in a differential configuration. The same technique adopted for pressure gauge measurements at low temperature led to a typical 0.1 Pa resolution over a dynamic range of 104 Pa. In the configuration of interleaved electrodes, condensers have been used to measure wetting by either bulk liquid helium or by thin continuous helium films in a cylindrical pipe. Both experimental and numerical evidence is provided, showing that the close proximity of a reference ground potential significantly increases the relative sensitivity to fluid wetting. Further, interleaved electrodes can be used to access both the area that is covered by a liquid film but also to determine the thickness of this film, provided it is comparable to the periodicity of the electrode pattern.

Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

NASA Astrophysics Data System (ADS)

Lagger, P.; Steinschifter, P.; Reiner, M.; Stadtmüller, M.; Denifl, G.; Naumann, A.; Müller, J.; Wilde, L.; Sundqvist, J.; Pogany, D.; Ostermaier, C.

2014-07-01

The high density of defect states at the dielectric/III-N interface in GaN based metal-insulator-semiconductor structures causes tremendous threshold voltage drifts, ΔVth, under forward gate bias conditions. A comprehensive study on different dielectric materials, as well as varying dielectric thickness tD and barrier thickness tB, is performed using capacitance-voltage analysis. It is revealed that the density of trapped electrons, ΔNit, scales with the dielectric capacitance under spill-over conditions, i.e., the accumulation of a second electron channel at the dielectric/AlGaN barrier interface. Hence, the density of trapped electrons is defined by the charging of the dielectric capacitance. The scaling behavior of ΔNit is explained universally by the density of accumulated electrons at the dielectric/III-N interface under spill-over conditions. We conclude that the overall density of interface defects is higher than what can be electrically measured, due to limits set by dielectric breakdown. These findings have a significant impact on the correct interpretation of threshold voltage drift data and are of relevance for the development of normally off and normally on III-N/GaN high electron mobility transistors with gate insulation.

Carbon supercapacitors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Delnick, F.M.

1993-11-01

Carbon supercapacitors are represented as distributed RC networks with transmission line equivalent circuits. At low charge/discharge rates and low frequencies these networks approximate a simple series R{sub ESR}C circuit. The energy efficiency of the supercapacitor is limited by the voltage drop across the ESR. The pore structure of the carbon electrode defines the electrochemically active surface area which in turn establishes the volume specific capacitance of the carbon material. To date, the highest volume specific capacitance reported for a supercapacitor electrode is 220F/cm{sup 3} in aqueous H{sub 2}SO{sub 4} (10) and {approximately}60 F/cm{sup 3} in nonaqueous electrolyte (8).

Quantitative determination of radio-opacity: equivalence of digital and film X-ray systems.

PubMed

Nomoto, R; Mishima, A; Kobayashi, K; McCabe, J F; Darvell, B W; Watts, D C; Momoi, Y; Hirano, S

2008-01-01

To evaluate the equivalence of a digital X-ray system (DenOptix) to conventional X-ray film in terms of the measured radio-opacity of known filled-resin materials and the suitability of attenuation coefficient for radio-opacity determination. Discs of five thicknesses (0.5-2.5mm) and step-wedges of each of three composite materials of nominal aluminum-equivalence of 50%, 200% and 450% were used. X-ray images of a set of discs (or step-wedge), an aluminum step-wedge, and a lead block were taken at 65 kV and 10 mA at a focus-film distance of 400 mm for 0.15s and 1.6s using an X-ray film or imaging plate. Radio-opacity was determined as equivalent aluminum thickness and attenuation coefficient. The logarithm of the individual optical density or gray scale value, corrected for background, was plotted against thickness, and the attenuation coefficient determined from the slope. The method of ISO 4049 was used for equivalent aluminum thickness. The equivalent aluminum thickness method is not suitable for materials of low radio-opacity, while the attenuation coefficient method could be used for all without difficulty. The digital system gave attenuation coefficients of greater precision than did film, but the use of automatic gain control (AGC) distorted the outcome unusably. Attenuation coefficient is a more precise and generally applicable approach to the determination of radio-opacity. The digital system was equivalent to film but with less noise. The use of AGC is inappropriate for such determinations.

Sensitive Capacitive-type Hydrogen Sensor Based on Ni Thin Film in Different Hydrogen Concentrations.

PubMed

Pour, Ghobad Behzadi; Aval, Leila Fekri; Eslami, Shahnaz

2018-04-01

Hydrogen sensors are micro/nano-structure that are used to locate hydrogen leaks. They are considered to have fast response/recovery time and long lifetime as compared to conventional gas sensors. In this paper, fabrication of sensitive capacitive-type hydrogen gas sensor based on Ni thin film has been investigated. The C-V curves of the sensor in different hydrogen concentrations have been reported. Dry oxidation was done in thermal chemical vapor deposition furnace (TCVD). For oxidation time of 5 min, the oxide thickness was 15 nm and for oxidation time 10 min, it was 20 nm. The Ni thin film as a catalytic metal was deposited on the oxide film using electron gun deposition. Two MOS sensors were compared with different oxide film thickness and different hydrogen concentrations. The highest response of the two MOS sensors with 15 nm and 20 nm oxide film thickness in 4% hydrogen concentration was 87.5% and 65.4% respectively. The fast response times for MOS sensors with 15 nm and 20 nm oxide film thickness in 4% hydrogen concentration was 8 s and 21 s, respectively. By increasing the hydrogen concentration from 1% to 4%, the response time for MOS sensor (20nm oxide thickness), was decreased from 28s to 21s. The recovery time was inversely increased from 237s to 360s. The experimental results showed that the MOS sensor based on Ni thin film had a quick response and a high sensitivity.

Quantifying the thickness of the electrical double layer neutralizing a planar electrode: the capacitive compactness.

PubMed

Guerrero-García, Guillermo Iván; González-Tovar, Enrique; Chávez-Páez, Martín; Kłos, Jacek; Lamperski, Stanisław

2017-12-20

The spatial extension of the ionic cloud neutralizing a charged colloid or an electrode is usually characterized by the Debye length associated with the supporting charged fluid in the bulk. This spatial length arises naturally in the linear Poisson-Boltzmann theory of point charges, which is the cornerstone of the widely used Derjaguin-Landau-Verwey-Overbeek formalism describing the colloidal stability of electrified macroparticles. By definition, the Debye length is independent of important physical features of charged solutions such as the colloidal charge, electrostatic ion correlations, ionic excluded volume effects, or specific short-range interactions, just to mention a few. In order to include consistently these features to describe more accurately the thickness of the electrical double layer of an inhomogeneous charged fluid in planar geometry, we propose here the use of the capacitive compactness concept as a generalization of the compactness of the spherical electrical double layer around a small macroion (González-Tovar et al., J. Chem. Phys. 2004, 120, 9782). To exemplify the usefulness of the capacitive compactness to characterize strongly coupled charged fluids in external electric fields, we use integral equations theory and Monte Carlo simulations to analyze the electrical properties of a model molten salt near a planar electrode. In particular, we study the electrode's charge neutralization, and the maximum inversion of the net charge per unit area of the electrode-molten salt system as a function of the ionic concentration, and the electrode's charge. The behaviour of the associated capacitive compactness is interpreted in terms of the charge neutralization capacity of the highly correlated charged fluid, which evidences a shrinking/expansion of the electrical double layer at a microscopic level. The capacitive compactness and its first two derivatives are expressed in terms of experimentally measurable macroscopic properties such as the differential and integral capacity, the electrode's surface charge density, and the mean electrostatic potential at the electrode's surface.

Lumped-parameters equivalent circuit for condenser microphones modeling.

PubMed

Esteves, Josué; Rufer, Libor; Ekeom, Didace; Basrour, Skandar

2017-10-01

This work presents a lumped parameters equivalent model of condenser microphone based on analogies between acoustic, mechanical, fluidic, and electrical domains. Parameters of the model were determined mainly through analytical relations and/or finite element method (FEM) simulations. Special attention was paid to the air gap modeling and to the use of proper boundary condition. Corresponding lumped-parameters were obtained as results of FEM simulations. Because of its simplicity, the model allows a fast simulation and is readily usable for microphone design. This work shows the validation of the equivalent circuit on three real cases of capacitive microphones, including both traditional and Micro-Electro-Mechanical Systems structures. In all cases, it has been demonstrated that the sensitivity and other related data obtained from the equivalent circuit are in very good agreement with available measurement data.

Frequency dependent ac transport of films of close-packed carbon nanotube arrays

NASA Astrophysics Data System (ADS)

Endo, A.; Katsumoto, S.; Matsuda, K.; Norimatsu, W.; Kusunoki, M.

2018-03-01

We have measured low-temperature ac impedance of films of closely-packed, highly-aligned carbon nanotubes prepared by thermal decomposition of silicon carbide wafers. The measurement was performed on films with the thickness (the length of the nanotubes) ranging from 6.5 to 65 nm. We found that the impedance rapidly decreases with the frequency. This can be interpreted as resulting from the electric transport via capacitive coupling between adjacent nanotubes. We also found numbers of sharp spikes superposed on frequency vs. impedance curves, which presumably represent resonant frequencies seen in the calculated conductivity of random capacitance networks. Capacitive coupling between the nanotubes was reduced by the magnetic field perpendicular to the films at 8.2 mK, resulting in the transition from negative to positive magnetoresistance with an increase of the frequency.

Low loss poly-silicon for high performance capacitive silicon modulators.

PubMed

Douix, Maurin; Baudot, Charles; Marris-Morini, Delphine; Valéry, Alexia; Fowler, Daivid; Acosta-Alba, Pablo; Kerdilès, Sébastien; Euvrard, Catherine; Blanc, Romuald; Beneyton, Rémi; Souhaité, Aurélie; Crémer, Sébastien; Vulliet, Nathalie; Vivien, Laurent; Boeuf, Frédéric

2018-03-05

Optical properties of poly-silicon material are investigated to be integrated in new silicon photonics devices, such as capacitive modulators. Test structure fabrication is done on 300 mm wafer using LPCVD deposition: 300 nm thick amorphous silicon layers are deposited on thermal oxide, followed by solid phase crystallization anneal. Rib waveguides are fabricated and optical propagation losses measured at 1.31 µm. Physical analysis (TEM ASTAR, AFM and SIMS) are used to assess the origin of losses. Optimal deposition and annealing conditions have been defined, resulting in 400 nm-wide rib waveguides with only 9.2-10 dB/cm losses.

Holey nickel hydroxide nanosheets for wearable solid-state fiber-supercapacitors.

PubMed

Shi, Peipei; Chen, Rong; Li, Li; An, Jianing; Hua, Li; Zhou, Jinyuan; Liu, Bin; Chen, Peng; Huang, Wei; Sun, Gengzhi

2018-03-28

Holey nickel hydroxide (Ni(OH) 2 ) nanosheets with a mean thickness of 2 nm are facilely synthesized, and then embedded in carbon nanotube (CNT) scaffolds to construct a hybrid fiber electrode, which shows a high volumetric capacitance of 335.9 F cm -3 at 0.8 A cm -3 and superior rate performance. The hybrid supercapacitor made from the Ni(OH) 2 /CNT fiber can deliver a high specific capacitance of 24.8 F cm -3 and an energy density of 5.8 mW h cm -3 with outstanding mechanical stability under repeated bending conditions.

The effect of hydrazine intercalation on the structure and capacitance of 2D titanium carbide (MXene)

DOE PAGES

Mashtalir, O.; Lukatskaya, Maria R.; Kolesnikov, Alexander I.; ...

2016-03-25

Herein we show that hydrazine intercalation into 2D titanium carbide (Ti 3C 2-based MXene) results in changes in its surface chemistry by decreasing the amounts of fluorine, OH surface groups and intercalated water. It also creates a pillaring effect between Ti 3C 2T x layers pre-opening the structure and improving the accessability to active sites. Furthermore, the hydrazine treated material has demonstrated a greatly improved capacitance of 250 F g –1 in acidic electrolytes with an excellent cycling ability for electrodes as thick as 75 μm.

Retinal sensitivity and choroidal thickness in high myopia.

PubMed

Zaben, Ahmad; Zapata, Miguel Á; Garcia-Arumi, Jose

2015-03-01

To estimate the association between choroidal thickness in the macular area and retinal sensitivity in eyes with high myopia. This investigation was a transversal study of patients with high myopia, all of whom had their retinal sensitivity measured with macular integrity assessment microperimetry. The choroidal thicknesses in the macular area were then measured by optical coherence tomography, and statistical correlations between their functionality and the anatomical structuralism, as assessed by both types of measurements, were analyzed. Ninety-six eyes from 77 patients with high myopia were studied. The patients had a mean age ± standard deviation of 38.9 ± 13.2 years, with spherical equivalent values ranging from -6.00 diopter to -20.00 diopter (8.74 ± 2.73 diopter). The mean central choroidal thickness was 159.00 ± 50.57. The mean choroidal thickness was directly correlated with sensitivity (r = 0.306; P = 0.004) and visual acuity but indirectly correlated with the spherical equivalent values and patient age. The mean sensitivity was not significantly correlated with the macular foveal thickness (r = -0.174; P = 0.101) or with the overall macular thickness (r = 0.103; P = 0.334); furthermore, the mean sensitivity was significantly correlated with visual acuity (r = 0.431; P < 0.001) and the spherical equivalent values (r = -0.306; P = 0.003). Retinal sensitivity in highly myopic eyes is directly correlated with choroidal thickness and does not seem to be associated with retinal thickness. Thus, in patients with high myopia, accurate measurements of choroidal thickness may provide more accurate information about this pathologic condition because choroidal thickness correlates to a greater degree with the functional parameters, patient age, and spherical equivalent values.

Theoretical Analysis and Design of Ultrathin Broadband Optically Transparent Microwave Metamaterial Absorbers

PubMed Central

Deng, Ruixiang; Li, Meiling; Muneer, Badar; Zhu, Qi; Shi, Zaiying; Song, Lixin; Zhang, Tao

2018-01-01

Optically Transparent Microwave Metamaterial Absorber (OTMMA) is of significant use in both civil and military field. In this paper, equivalent circuit model is adopted as springboard to navigate the design of OTMMA. The physical model and absorption mechanisms of ideal lightweight ultrathin OTMMA are comprehensively researched. Both the theoretical value of equivalent resistance and the quantitative relation between the equivalent inductance and equivalent capacitance are derived for design. Frequency-dependent characteristics of theoretical equivalent resistance are also investigated. Based on these theoretical works, an effective and controllable design approach is proposed. To validate the approach, a wideband OTMMA is designed, fabricated, analyzed and tested. The results reveal that high absorption more than 90% can be achieved in the whole 6~18 GHz band. The fabricated OTMMA also has an optical transparency up to 78% at 600 nm and is much thinner and lighter than its counterparts. PMID:29324686

Theoretical Analysis and Design of Ultrathin Broadband Optically Transparent Microwave Metamaterial Absorbers.

PubMed

Deng, Ruixiang; Li, Meiling; Muneer, Badar; Zhu, Qi; Shi, Zaiying; Song, Lixin; Zhang, Tao

2018-01-11

Optically Transparent Microwave Metamaterial Absorber (OTMMA) is of significant use in both civil and military field. In this paper, equivalent circuit model is adopted as springboard to navigate the design of OTMMA. The physical model and absorption mechanisms of ideal lightweight ultrathin OTMMA are comprehensively researched. Both the theoretical value of equivalent resistance and the quantitative relation between the equivalent inductance and equivalent capacitance are derived for design. Frequency-dependent characteristics of theoretical equivalent resistance are also investigated. Based on these theoretical works, an effective and controllable design approach is proposed. To validate the approach, a wideband OTMMA is designed, fabricated, analyzed and tested. The results reveal that high absorption more than 90% can be achieved in the whole 6~18 GHz band. The fabricated OTMMA also has an optical transparency up to 78% at 600 nm and is much thinner and lighter than its counterparts.

Synthesis and Characterization of Self-Standing and Highly Flexible δ-MnO2@CNTs/CNTs Composite Films for Direct Use of Supercapacitor Electrodes.

PubMed

Wu, Peng; Cheng, Shuang; Yang, Lufeng; Lin, Zhiqiang; Gui, Xuchun; Ou, Xing; Zhou, Jun; Yao, Minghai; Wang, Mengkun; Zhu, Yuanyuan; Liu, Meilin

2016-09-14

Self-standing and flexible films worked as pseudocapacitor electrodes have been fabricated via a simple vacuum-filtration procedure to stack δ-MnO2@carbon nanotubes (CNTs) composite layer and pure CNT layer one by one with CNT layers ended. The lightweight CNTs layers served as both current collector and supporter, while the MnO2@CNTs composite layers with birnessite-type MnO2 worked as active layer and made the main contribution to the capacitance. At a low discharge current of 0.2 A g(-1), the layered films displayed a high areal capacitance of 0.293 F cm(-2) with a mass of 1.97 mg cm(-2) (specific capacitance of 149 F g(-1)) and thickness of only 16.5 μm, and hence an volumetric capacitance of about 177.5 F cm(-3). Moreover, the films also exhibited a good rate capability (only about 15% fading for the capacitance when the discharge current increased to 5 A g(-1) from 0.2 A g(-1)), outstanding cycling stability (about 90% of the initial capacitance was remained after 5,000 cycles) and high flexibility (almost no performance change when bended to different angles). In addition, the capacitance of the films increased proportionally with the stacked layers and the geometry area. E.g., when the stacked layers were three times many with a mass of 6.18 mg cm(-2), the areal capacitance of the films was increased to 0.764 F cm(-2) at 0.5 A g(-1), indicating a high electronic conductivity. It is not overstated to say that the flexible and lightweight layered films emerged high potential for future practical applications as supercapacitor electrodes.

Research on the equivalent circuit model of a circular flexural-vibration-research on the equivalent circuit model of a circular flexural-vibration-mode piezoelectric transformer with moderate thickness.

PubMed

Huang, Yihua; Huang, Wenjin; Wang, Qinglei; Su, Xujian

2013-07-01

The equivalent circuit model of a piezoelectric transformer is useful in designing and optimizing the related driving circuits. Based on previous work, an equivalent circuit model for a circular flexural-vibration-mode piezoelectric transformer with moderate thickness is proposed and validated by finite element analysis. The input impedance, voltage gain, and efficiency of the transformer are determined through computation. The basic behaviors of the transformer are shown by numerical results.

Thickness Dependent Structural and Dielectric Properties of Calcium Copper Titanate Thin Films Produced by Spin-Coating Method for Microelectronic Devices

NASA Astrophysics Data System (ADS)

Thiruramanathan, P.; Sankar, S.; Marikani, A.; Madhavan, D.; Sharma, Sanjeev K.

2017-07-01

Calcium copper titanate (CaCu3Ti4O12, CCTO) thin films have been deposited on platinized silicon [(111)Pt/Ti/SiO2/Si] substrate through a sol-gel spin coating technique and annealed at 600-900°C with a variation of 100°C per sample for 3 h. The activation energy for crystalline growth, as well as optimal annealing temperature (900°C) of the CCTO crystallites was studied by x-ray diffraction analysis (XRD). Thickness dependent structural, morphological, and optical properties of CCTO thin films were observed. The field emission scanning electron microscopy (FE-SEM) verified that the CCTO thin films are uniform, fully covered, densely packed, and the particle size was found to be increased with film thickness. Meanwhile, quantitative analysis of dielectric properties (interfacial capacitance, dead layers, and bulk dielectric constant) of CCTO thin film with metal-insulator-metal (M-I-M) structures has been investigated systematically using a series capacitor model. Room temperature dielectric properties of all the samples exhibit dispersion at low frequencies, which can be explained based on Maxwell-Wagner two-layer models and Koop's theory. It was found that the 483 nm thick CCTO film represents a high dielectric constant ( ɛ r = 3334), low loss (tan δ = 3.54), capacitance ( C = 4951 nF), which might satisfy the requirements of embedded capacitor.

Molecular Dynamics Simulation Study of the Capacitive Performance of a Binary Mixture of Ionic Liquids near an Onion-like Carbon Electrode.

PubMed

Li, Song; Feng, Guang; Fulvio, Pasquale F; Hillesheim, Patrick C; Liao, Chen; Dai, Sheng; Cummings, Peter T

2012-09-06

An equimolar mixture of 1-methyl-1-propylpyrrolidinium bis(trifluoromethylsulfonyl)imide ([C3mpy][Tf2N]), 1-methyl-1-butylpiperidinium bis(trifluoromethylsulfonyl)imide ([C4mpip][Tf2N]) was investigated by classic molecular dynamics (MD) simulation. Differential scanning calorimetry (DSC) measurements verified that the binary mixture exhibited lower glass transition temperature than either of the pure room-temperature ionic liquids (RTILs). Moreover, the binary mixture gave rise to higher conductivity than the neat RTILs at lower temperature range. In order to study its capacitive performance in supercapacitors, simulations were performed of the mixture, and the neat RTILs used as electrolytes near an onion-like carbon (OLC) electrode at varying temperatures. The differential capacitance exhibited independence of the electrical potential applied for three electrolytes, which is in agreement with previous work on OLC electrodes in a different RTILs. Positive temperature dependence of the differential capacitance was observed, and it was dominated by the electrical double layer (EDL) thickness, which is for the first time substantiated in MD simulation.

An experimental/theoretical method to measure the capacitive compactness of an aqueous electrolyte surrounding a spherical charged colloid

NASA Astrophysics Data System (ADS)

Moraila-Martínez, Carmen Lucía; Guerrero-García, Guillermo Iván; Chávez-Páez, Martín; González-Tovar, Enrique

2018-04-01

The capacitive compactness has been introduced very recently [G. I. Guerrero-García et al., Phys. Chem. Chem. Phys. 20, 262-275 (2018)] as a robust and accurate measure to quantify the thickness, or spatial extension, of the electrical double layer next to either an infinite charged electrode or a spherical macroion. We propose here an experimental/theoretical scheme to determine the capacitive compactness of a spherical electrical double layer that relies on the calculation of the electrokinetic charge and the associated mean electrostatic potential at the macroparticle's surface. This is achieved by numerically solving the non-linear Poisson-Boltzmann equation of point ions around a colloidal sphere and matching the corresponding theoretical mobility, predicted by the O'Brien and White theory [J. Chem. Soc., Faraday Trans. 2 74, 1607-1626 (1978)], with experimental measurements of the electrophoretic mobility under the same conditions. This novel method is used to calculate the capacitive compactness of NaCl and CaCl2 electrolytes surrounding a negatively charged polystyrene particle as a function of the salt concentration.

An equivalent circuit for small atrial trabeculae of frog.

PubMed Central

Jakobsson, E; Barr, L; Connor, J A

1975-01-01

An equivalent electrical circuit has been constructed for small atrial trabecula of frog in a double sucrose gap voltage clamp apparatus. The basic strategy in constructing the circuit was to derive the distribution of membrane capacitance and extracellular resistance from the preparation's response to small voltage displacements near the resting condition, when the membrane conductance is presumably quite low. Then standard Hodgkin-Huxley channels were placed in parallel with the capacitance and the results of voltage clamp experiments were simulated. The results suggest that the membranes of the preparation cannot in fact be clamped near the control voltage nor can the ionic currents be measured directly with reasonable accuracy by axon standards. It may or may not be a realizable goal in the future to define the preparation's electrical behavior well enough to permit the ultimate quantitative description of the membrane's specific ion conductances. The result of this paper suggest that if this goal is achieved using the double sucrose gap voltage clamp, it will be by a detailed quantitative accounting for substantial irreducible errors in voltage control, rather than by experimental achievement of good voltage control. PMID:1203441

Complete passive vibration suppression using multi-layered piezoelectric element, inductor, and resistor

NASA Astrophysics Data System (ADS)

Yamada, Keisuke

2017-01-01

This paper describes passive technique for suppressing vibration in flexible structures using a multi-layered piezoelectric element, an inductor, and a resistor. The objective of using a multi-layered piezoelectric element is to increase its capacitance. A piezoelectric element with a large capacitance value does not require an active electrical circuit to simulate an inductor with a large inductance value. The effect of multi-layering of piezoelectric elements was theoretically analyzed through an equivalent transformation of a multi-layered piezoelectric element into a single-layered piezoelectric element. The governing equations were derived using this equivalent transformation. The effect of the resistances of the inductor and piezoelectric elements were considered because the sum of these resistances may exceed the optimum resistance. The performance of the passive vibration suppression using an LR circuit was compared to that of the method where a resistive circuit is used assuming that the sum of the resistances of the inductor and piezoelectric elements exceeds the optimum resistance. The effectiveness of the proposed method and theoretical analysis was verified through simulations and experiments.

Experimental diagnostics and modeling of inductive phenomena at low frequencies in impedance spectra of proton exchange membrane fuel cells

NASA Astrophysics Data System (ADS)

Pivac, Ivan; Šimić, Boris; Barbir, Frano

2017-10-01

Representation of fuel cell processes by equivalent circuit models, involving resistance and capacitance elements representing activation losses on both anode and cathode in series with resistance representing ohmic losses, cannot capture and explain the inductive loop that may show up at low frequencies in Nyquist diagram representation of the electrochemical impedance spectra. In an attempt to explain the cause of the low-frequency inductive loop and correlate it with the processes within the fuel cell electrodes, a novel equivalent circuit model of a Proton Exchange Membrane (PEM) fuel cell has been proposed and experimentally verified here in detail. The model takes into account both the anode and the cathode, and has an additional resonant loop on each side, comprising of a resistance, capacitance and inductance in parallel representing the processes within the catalyst layer. Using these additional circuit elements, more accurate and better fits to experimental impedance data in the wide frequency range at different current densities, cell temperatures, humidity of gases, air flow stoichiometries and backpressures were obtained.

Linear and nonlinear equivalent circuit modeling of CMUTs.

PubMed

Lohfink, Annette; Eccardt, Peter-Christian

2005-12-01

Using piston radiator and plate capacitance theory capacitive micromachined ultrasound transducers (CMUT) membrane cells can be described by one-dimensional (1-D) model parameters. This paper describes in detail a new method, which derives a 1-D model for CMUT arrays from finite-element methods (FEM) simulations. A few static and harmonic FEM analyses of a single CMUT membrane cell are sufficient to derive the mechanical and electrical parameters of an equivalent piston as the moving part of the cell area. For an array of parallel-driven cells, the acoustic parameters are derived as a complex mechanical fluid impedance, depending on the membrane shape form. As a main advantage, the nonlinear behavior of the CMUT can be investigated much easier and faster compared to FEM simulations, e.g., for a design of the maximum applicable voltage depending on the input signal. The 1-D parameter model allows an easy description of the CMUT behavior in air and fluids and simplifies the investigation of wave propagation within the connecting fluid represented by FEM or transmission line matrix (TLM) models.

Design and electrical performance of CdS/Sb2Te3 tunneling heterojunction devices

NASA Astrophysics Data System (ADS)

Khusayfan, Najla M.; Qasrawi, A. F.; Khanfar, Hazem K.

2018-02-01

In the current work, a tunneling barrier device made of 20 nm thick Sb2Te3 layer deposited onto 500 nm thick CdS is designed and characterized. The design included a Yb metallic substrate and Ag point contact of area of 10-3 cm2. The heterojunction properties are investigated by means of x-ray diffraction and impedance spectroscopy techniques. It is observed that the coating of the Sb2Te3 onto the surface of CdS causes a further deformation to the already strained structure of hexagonal CdS. The designed energy band diagram for the CdS/Sb2Te3 suggests a straddling type of heterojunction with an estimated conduction and valence band offsets of 0.35 and 1.74 eV, respectively. In addition, the analysis of the capacitance-voltage characteristic curve revealed a depletion region width of 14 nm. On the other hand, the capacitance and conductivity spectra which are analyzed in the frequency domain of 0.001-1.80 GHz indicated that the conduction in the device is dominated by the quantum mechanical tunneling in the region below 0.26 GHz and by the correlated barrier hopping in the remaining region. While the modeling of the conductivity spectra allowed investigation of the density of states near Fermi levels and an average scattering time of 1.0 ns, the capacitance spectra exhibited resonance at 0.26 GHz followed by negative differential capacitance effect in the frequency domain of 0.26-1.8 GHz. Furthermore, the evaluation of the impedance and reflection coefficient spectra indicated the usability of these devices as wide range low pass filters with ideal values of voltage standing wave ratios.

Screening length and quantum capacitance in graphene by scanning probe microscopy.

PubMed

Giannazzo, F; Sonde, S; Raineri, V; Rimini, E

2009-01-01

A nanoscale investigation on the capacitive behavior of graphene deposited on a SiO2/n(+) Si substrate (with SiO2 thickness of 300 or 100 nm) was carried out by scanning capacitance spectroscopy (SCS). A bias V(g) composed by an AC signal and a slow DC voltage ramp was applied to the macroscopic n(+) Si backgate of the graphene/SiO(2)/Si capacitor, while a nanoscale contact was obtained on graphene by the atomic force microscope tip. This study revealed that the capacitor effective area (A(eff)) responding to the AC bias is much smaller than the geometrical area of the graphene sheet. This area is related to the length scale on which the externally applied potential decays in graphene, that is, the screening length of the graphene 2DEG. The nonstationary charges (electrons/holes) induced by the AC potential spread within this area around the contact. A(eff) increases linearly with the bias and in a symmetric way for bias inversion. For each bias V(g), the value of A(eff) is related to the minimum area necessary to accommodate the not stationary charges, according to the graphene density of states (DOS) at V(g). Interestingly, by decreasing the SiO(2) thickness from 300 to 100 nm, the slope of the A(eff) versus bias curve strongly increases (by a factor of approximately 50). The local quantum capacitance C(q) in the contacted graphene region was calculated starting from the screening length, and the distribution of the values of C(q) for different tip positions was obtained. Finally the lateral variations of the DOS in graphene was determined.

Experimental study of a variable-capacitance micromotor with electrostatic suspension

NASA Astrophysics Data System (ADS)

Han, F. T.; Wu, Q. P.; Wang, L.

2010-11-01

A variable-capacitance micromotor where the rotor is supported electrostatically in five degrees of freedom was designed, fabricated and tested in order to study the behavior of this electrostatic motor. The micromachined device is based on a glass/silicon/glass stack bonding structure, fabricated by bulk micromachining and initially operated in atmospheric environment. The analytical torque model is obtained by calculating the capacitances between different stator electrodes and the rotor. Capacitance values in the order of 10-13 pF and torque values in the order of 10-10 N m have been calculated from the motor geometry and attainable drive voltage. A dynamic model of the motor is proposed by further estimating the air-film damping effect in an effort to explain the experimental rotation measurements. Experimental results of starting voltage, continuous operation, switching response and electric bearing of the micromotor are presented and discussed. Preliminary measurements indicate that a rotor rotating speed of 73.3 r min-1 can be achieved at a drive voltage of 28.3 V, equivalent to a theoretical motive torque of 517 pN m. Starting voltage results obtained from experimental measurement are in agreement with the developed dynamic model.

EFFECTS OF ELECTRODE RESISTANCE ON THE DIELECTRIC BEHAVIORS OF Au/BaxSr1-xTiO3/La1.1Sr0.9NiO4 CAPACITORS

NASA Astrophysics Data System (ADS)

Qiu, Jie; Liu, Guozhen; Wolfman, Jérôme

2016-05-01

BaxSr1-xTiO3 (0.1≤x≤0.5) (BST) thin films were prepared on La1.1Sr0.9NiO4 (LSNO)/SrTiO3 (STO) structure by combinatorial pulsed laser deposition (comb-PLD). The capacitances of the Au/BST/LSNO capacitors exhibited strong frequency dependence especially when the applied frequency was higher than 10kHz. On the basis of an equivalent circuit model, we presented a theoretical simulation of the relationships between capacitance and frequency for the capacitors with different electrode serial resistances. Based on the fitting results, the observed strong frequency dependence of the measured capacitance at high frequency in our study could be ascribed to the large serial resistance of 750 Ω for oxide electrode LSNO. Further simulation studies found that large serial resistance (1000 Ω) could result in an apparent deviation from the intrinsic dielectric properties especially at high frequencies (>100kHz) for capacitors with capacitances above 1nF. Our results provide useful information for the design of all-oxide electronic devices.

Tunable dielectric properties of TiO2 thin film based MOS systems for application in microelectronics

NASA Astrophysics Data System (ADS)

Gyanan; Mondal, Sandip; Kumar, Arvind

2016-12-01

Post-deposition annealing (PDA) is an inherent part of a sol-gel fabrication process to achieve the optimum device performance, especially in CMOS applications. Annealing removes the oxygen vacancies and improves the structural order of the dielectric films. The process also reduces the interface related defects and improves the interfacial properties. Here, we applied a sol-gel spin-coating technique to prepare high-k TiO2 films on the p-Si substrate. These films were fired at 400 °C for the duration of 20, 40, 60 and 80 min to know the effects of annealing time on the device characteristics. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of annealed TiO2 films were examined in Al/TiO2/p-Si device configuration at room temperature. The 60 min annealed film gives the optimum performance and contained 69.5% anatase and 39.5% rutile phase with refractive index 2.40 at 550 nm. The C-V and I-V characteristic showed a significant dependence on annealing time such as variation in dielectric constant and leakage current. This allows us to tune the various electrical properties of MOS systems. The accumulation capacitance (Cox), dielectric constant (κ) and the equivalent oxide thickness (EOT) of the film fired for 60 min were found to be 458 pF, 33, and 4.25 nm, respectively with a low leakage current density (3.13 × 10-7 A/cm2) fired for 80 min at -1 V. The current conduction mechanisms at high bias voltage were dominated by trap-charge limited current (TCLC), while at small voltages, space charge limited current (SCLC) was more prominent.

Effects of HfO2 encapsulation on electrical performances of few-layered MoS2 transistor with ALD HfO2 as back-gate dielectric.

PubMed

Xu, Jingping; Wen, Ming; Zhao, Xinyuan; Liu, Lu; Song, Xingjuan; Lai, Pui-To; Tang, Wing-Man

2018-08-24

The carrier mobility of MoS 2 transistors can be greatly improved by the screening role of high-k gate dielectric. In this work, atomic-layer deposited (ALD) HfO 2 annealed in NH 3 is used to replace SiO 2 as the gate dielectric to fabricate back-gated few-layered MoS 2 transistors, and good electrical properties are achieved with field-effect mobility (μ) of 19.1 cm 2 V -1 s -1 , subthreshold swing (SS) of 123.6 mV dec -1 and on/off ratio of 3.76 × 10 5 . Furthermore, enhanced device performance is obtained when the surface of the MoS 2 channel is coated by an ALD HfO 2 layer with different thicknesses (10, 15 and 20 nm), where the transistor with a 15 nm HfO 2 encapsulation layer exhibits the best overall electrical properties: μ = 42.1 cm 2 V -1 s -1 , SS = 87.9 mV dec -1 and on/off ratio of 2.72 × 10 6 . These improvements should be associated with the enhanced screening effect on charged-impurity scattering and protection from absorption of environmental gas molecules by the high-k encapsulation. The capacitance equivalent thickness of the back-gate dielectric (HfO 2 ) is only 6.58 nm, which is conducive to scaling of the MoS 2 transistors.

Few-layered Ni(OH)2 nanosheets for high-performance supercapacitors

NASA Astrophysics Data System (ADS)

Sun, Wenping; Rui, Xianhong; Ulaganathan, Mani; Madhavi, Srinivasan; Yan, Qingyu

2015-11-01

Few-layered Ni(OH)2 nanosheets (4-5 nm in thickness) are synthesized towards high-performance supercapacitors. The ultrathin Ni(OH)2 nanosheets show high specific capacitance and good rate capability in both three-electrode and asymmetric devices. In the three-electrode device, the Ni(OH)2 nanosheets deliver a high capacitance of 2064 F g-1 at 2 A g-1, and the capacitance still has a retention of 1837 F g-1 at a high current density of 20 A g-1. Such excellent performance is by far one of the best for Ni(OH)2 electrodes. In the two-electrode asymmetric device, the specific capacitance is 248 F g-1 at 1 A g-1, and reaches 113 F g-1 at 20 A g-1. The capacitance of the asymmetric device maintains to be 166 F g-1 during the 4000th cycle at 2 A g-1, suggesting good cycling stability of the device. Besides, the asymmetric device exhibits gravimetric energy density of 22 Wh kg-1 at a power density of 0.8 kW kg-1. The present results demonstrate that the ultrathin Ni(OH)2 nanosheets are highly attractive electrode materials for achieving fast charging/discharging and high-capacity supercapacitors.

Free-standing graphene films prepared via foam film method for great capacitive flexible supercapacitors

NASA Astrophysics Data System (ADS)

Zhu, Yucan; Ye, Xingke; Tang, Zhonghua; Wan, Zhongquan; Jia, Chunyang

2017-11-01

Recently, graphene films have always attracted attention due to their excellent characteristics in energy storage. In this work, a novel graphene oxide (GO) film with excellent mechanical properties, whose thickness was regulated simply via changing the concentration of the surfactant, was successfully prepared by foam film method. After chemical reduction, the reduced GO (rGO) films have excellent electrical conductivity of ∼172 S cm-1. Moreover, the supercapacitors based on the rGO films exhibit satisfied capacitive performance of ∼56 mF cm-2 at 0.2 mA cm-2 in 6 M KOH aqueous solution. Meanwhile, the flexible all solid state supercapacitors (FSSCs) based on the rGO films also show great volumetric capacitance of ∼2810 mF cm-3 at 12 mA cm-3 (∼1607 mF cm-3 at 613 mA cm-3) with polyvinyl alcohol-KOH gel electrolyte. Besides, after 10000 cycles and continuously bent to 180° for 300 times, the volumetric capacitance of the FSSC remains at 81.4% and 90.4% of its initial capacitance value, respectively. Therefore, the free-standing rGO films prepared via foam film method could be considered as promising electrode materials for high performance flexible supercapacitors.

The influence of design parameters on the performance of FBAR in 10-14 GHz

NASA Astrophysics Data System (ADS)

Nor, N. I. M.; Osman, R. A. M.; Idris, M. S.; Khalid, N.; Mohamad Isa, M.; Ahmad, N.; Mat Isa, Siti S.; Ramli, Muhammad M.; Kasjoo, S. R.

2017-11-01

This research presents the analysis of the influence of design parameters on the performance of film bilk acoustic wave resonator (FBAR) working from 10 GHz to 14 GHz. The analysis is done by implementing one-dimensional (1-D) modellings, which are 1-D Mason model and Butterworth Van Dyke (BVD) model. The physical parameters such as piezoelectric materials and its thickness, and size of area affecting the characteristics of the FBAR are analyzed in detail. Zinc oxide (ZnO) and aluminum nitride (AlN) are chosen as the piezoelectric materials. The resonance area is varied at 25μm×25μm to 35μm×35μm. From the analysis, it is found that as the frequency increases, the thickness of the piezoelectric material decreases. Meanwhile, the static capacitance increases as the frequency increases. It is also found that as the area increases, the electrical impedance and static capacitance also increases.

On gate stack scalability of double-gate negative-capacitance FET with ferroelectric HfO2 for energy efficient sub-0.2 V operation

NASA Astrophysics Data System (ADS)

Jang, Kyungmin; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro

2018-02-01

We have investigated the gate stack scalability and energy efficiency of double-gate negative-capacitance FET (DGNCFET) with a CMOS-compatible ferroelectric HfO2 (FE:HfO2). Analytic model-based simulation is conducted to investigate the impacts of ferroelectric characteristic of FE:HfO2 and gate stack thickness on the I on/I off ratio of DGNCFET. DGNCFET has wider design window for the gate stack where higher I on/I off ratio can be achieved than DG classical MOSFET. Under a process-induced constraint with sub-10 nm gate length (L g), FE:HfO2-based DGNCFET still has a design point for high I on/I off ratio. With an optimized gate stack thickness for sub-10 nm L g, FE:HfO2-based DGNCFET has 2.5× higher energy efficiency than DG classical MOSFET even at ultralow operation voltage of sub-0.2 V.

Experimental Determination of Load Carrying Capacity of Point Contacts at Zero Entrainment Velocity

NASA Technical Reports Server (NTRS)

Shogrin, Bradley A.; Jones, William R., Jr.; Kingsbury, Edward P.; Prahl, Joseph M.

1999-01-01

A capacitance technique was used to monitor the film thickness separating two steel balls of a unique tribometer while subjecting the ball-ball contact to highly stressed, zero entrainment velocity (ZEV) conditions. All tests were performed under a N2 purge (R.H. < 1.0%) and utilized 52100 steel balls (R(sub a) = 0.02 mm). Tribometer operations and capacitance-to-film-thickness accuracy were verified by comparing the film thickness approximations to established theoretical predictions for test conditions involving pure rolling. Pure rolling experiments were performed under maximum contact stresses and entrainment velocities of 1.0 GPa and 1.0 m/s to 3.0 m/s, respectively. All data from these baseline tests conformed to theory. ZEV tests were initiated after calibration of the tribometer and verification of film thickness approximation accuracy. Maximum contact stresses up to 0.57 GPa were supported at zero entrainment velocity with sliding speeds from 6.0 to 10.0 m/s for sustained amounts of time up to 28.8 minutes. The protective lubricating film separating the specimens at ZEV had a thickness between 0.10 and 0.14 mm (4 to 6 min), which corresponds to an approximate L-value of 4. The film thickness did not have a strong dependence upon variations of load or speed. Decreasing the sliding speed from 10.0 m/s to 1 m/s revealed a rapid loss in load support between 3.0 and 1.0 m/s. The formation of an immobile film formed by lubricant entrapment is discussed as an explanation of the load carrying capacity at these zero entrainment velocity conditions, relevant to the ball-ball contact application in retainerless ball bearings.

Low-loss microelectrodes fabricated using reverse-side exposure for a tunable ferroelectric capacitor application

NASA Astrophysics Data System (ADS)

Yoon, Yong-Kyu; Stevenson Kenney, J.; Hunt, Andrew T.; Allen, Mark G.

2006-02-01

Narrowly spaced thick microelectrodes are fabricated using a self-aligned multiple reverse-side exposure scheme for an improved quality-factor tunable ferroelectric capacitor. The microelectrodes are fabricated on a functional substrate—a thin film ferroelectric (barium strontium titanate, BST; BaxSr1-xTiO3) coated sapphire substrate, which has an electric-field-dependent dielectric property providing tuning functionality, as well as UV transparency permitting an additional degree of freedom in photolithography steps. The microelectrode process has been applied to interdigitated capacitor fabrication, where a critical challenge is maintaining narrow gaps between electrodes for high tunability, while simultaneously forming thick electrodes to minimize conductor loss. A single mask, self-aligned reverse-side exposure through the transparent substrate achieves both these goals. A single-finger test capacitor with an electrode gap of 1.2 µm and an electrode thickness of 2.2 µm is fabricated and characterized. Tunability (T = 100 × (C0 - Cbias)/C0) of 33% at 10 V has been achieved at 100 kHz. The 2.2 µm thick structure shows improvement of Q-factor compared to that of a 0.1 µm thick structure. To demonstrate the scalability of this process, a 102-finger interdigitated capacitor is fabricated and characterized at 100 kHz and 1 GHz. The structure is embedded in a 25 µm thick epoxy resin SU-8 for passivation. A quality factor decrease of 15-25%, tunability decrease of 2-3% and capacitance increase of 6% are observed due to the expoxy resin after passivation. High frequency performance of the capacitor has been measured to be 15.9 pF of capacitance, 28.1% tunability at 10 V and a quality factor of 16 (at a 10 V dc bias) at 1 GHz.

Solution growth of NiO nanosheets supported on Ni foam as high-performance electrodes for supercapacitors

NASA Astrophysics Data System (ADS)

Yan, Hailong; Zhang, Deyang; Xu, Jinyou; Lu, Yang; Liu, Yunxin; Qiu, Kangwen; Zhang, Yihe; Luo, Yongsong

2014-08-01

Well-aligned nickel oxide (NiO) nanosheets with the thickness of a few nanometers supported on a flexible substrate (Ni foam) have been fabricated by a hydrothermal approach together with a post-annealing treatment. The three-dimensional NiO nanosheets were further used as electrode materials to fabricate supercapacitors, with high specific capacitance of 943.5, 791.2, 613.5, 480, and 457.5 F g-1 at current densities of 5, 10, 15, 20, and 25 A g-1, respectively. The NiO nanosheets combined well with the substrate. When the electrode material was bended, it can still retain 91.1% of the initial capacitance after 1,200 charging/discharging cycles. Compared with Co3O4 and NiO nanostructures, the specific capacitance of NiO nanosheets is much better. These characteristics suggest that NiO nanosheet electrodes are promising for energy storage application with high power demands.

High rate capacitive performance of single-walled carbon nanotube aerogels

DOE PAGES

Van Aken, Katherine L.; Pérez, Carlos R.; Oh, Youngseok; ...

2015-05-30

Single-walled carbon nanotube (SWCNT) aerogels produced by critical-point-drying of wet-gel precursors exhibit unique properties, such as high surface-area-to-volume and strength-to-weight ratios. They are free-standing, are binder-free, and can be scaled to thicknesses of more than 1 mm. In this paper, we examine the electric double layer capacitive behavior of these materials using a common room temperature ionic liquid electrolyte, 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide (EMI-TFSI). Electrochemical performance is assessed through galvanostatic cycling, cyclic voltammetry and impedance spectroscopy. Results indicate stable capacitive performance over 10,000 cycles as well as an impressive performance at high charge and discharge rates, due to accessible pore networks andmore » enhanced electronic and ionic conductivities of SWCNT aerogels. Finally, these materials can find applications in mechanically compressible and flexible supercapacitor devices with high power requirements.« less

In-situ space-confined catalysis for fabricating 3D mesoporous graphene and their capacitive properties

NASA Astrophysics Data System (ADS)

Qin, Jian; Zhu, Shan; Feng, Chao; Zhao, Naiqin; Shi, Chunsheng; Liu, En-Zuo; He, Fang; Ma, Liying; Li, Jiajun; He, Chunnian

2018-03-01

A one-step strategy for preparing 3D mesoporous graphene networks (3DMGNs) based on the concepts of space-confined effect, catalytic effect and chemical activation is reported in this work. The soluble salts act as the in-situ templates to confine the thickness of 3D graphene layers. Meanwhile, the Fe-catalysts greatly improve the graphitization of the graphene matrix, which are easy to be removed by acid treatment. In addition, the KOH activation introduces abundant mesopores into the graphene networks, which facilities the electrolyte permeation. Thus, when using as electrode materials for supercapacitor, the as-obtained 3DMGNs with high electron conductivity, large surface area and hierarchical porous structure exhibit excellent capacitive properties, including high specific capacitance (215 F g-1 at 0.5 A g-1) and superior rate performance (168 F g-1 at 50 A g-1).

Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments

NASA Astrophysics Data System (ADS)

Jain, Geetika; Dalal, Ranjeet; Bhardwaj, Ashutosh; Ranjan, Kirti; Dierlamm, Alexander; Hartmann, Frank; Eber, Robert; Demarteau, Marcel

2018-02-01

P-on-n silicon strip sensors having multiple guard-ring structures have been developed for High Energy Physics applications. The study constitutes the optimization of the sensor design, and fabrication of AC-coupled, poly-silicon biased sensors of strip width of 30 μm and strip pitch of 55 μm. The silicon wafers used for the fabrication are of 4 inch n-type, having an average resistivity of 2-5 k Ω cm, with a thickness of 300 μm. The electrical characterization of these detectors comprises of: (a) global measurements of total leakage current, and backplane capacitance; (b) strip and voltage scans of strip leakage current, poly-silicon resistance, interstrip capacitance, interstrip resistance, coupling capacitance, and dielectric current; and (c) charge collection measurements using ALiBaVa setup. The results of the same are reported here.

P(VDF-TrFE) ferroelectric nanotube array for high energy density capacitor applications.

PubMed

Li, Xue; Lim, Yee-Fun; Yao, Kui; Tay, Francis Eng Hock; Seah, Kar Heng

2013-01-14

Poly(vinylidene-fluoride-co-trifluoroethylene) (P(VDF-TrFE)) ferroelectric nanotube arrays were fabricated using an anodized alumina membrane (AAM) as a template and silver electrodes were deposited on both the outer and inner sides of the nanotubes by an electroless plating method. The nanotubes have the unique structure of being sealed at one end and linked at the open end, thus preventing electrical shorting between the inner and outer electrodes. Compared with a P(VDF-TrFE) film with a similar overall thickness, the idealized nanotube array has a theoretical capacitance that is 763 times larger due to the greatly enlarged contact area between the electrodes and the polymer dielectric. A capacitance that is 95 times larger has been demonstrated experimentally, thus indicating that such nanotube arrays are promising for realizing high density capacitance and high power dielectric energy storage.

Solution growth of NiO nanosheets supported on Ni foam as high-performance electrodes for supercapacitors.

PubMed

Yan, Hailong; Zhang, Deyang; Xu, Jinyou; Lu, Yang; Liu, Yunxin; Qiu, Kangwen; Zhang, Yihe; Luo, Yongsong

2014-01-01

Well-aligned nickel oxide (NiO) nanosheets with the thickness of a few nanometers supported on a flexible substrate (Ni foam) have been fabricated by a hydrothermal approach together with a post-annealing treatment. The three-dimensional NiO nanosheets were further used as electrode materials to fabricate supercapacitors, with high specific capacitance of 943.5, 791.2, 613.5, 480, and 457.5 F g(-1) at current densities of 5, 10, 15, 20, and 25 A g(-1), respectively. The NiO nanosheets combined well with the substrate. When the electrode material was bended, it can still retain 91.1% of the initial capacitance after 1,200 charging/discharging cycles. Compared with Co3O4 and NiO nanostructures, the specific capacitance of NiO nanosheets is much better. These characteristics suggest that NiO nanosheet electrodes are promising for energy storage application with high power demands.

Electrochemical behavior of high performance on-chip porous carbon films for micro-supercapacitors applications in organic electrolytes

NASA Astrophysics Data System (ADS)

Brousse, K.; Huang, P.; Pinaud, S.; Respaud, M.; Daffos, B.; Chaudret, B.; Lethien, C.; Taberna, P. L.; Simon, P.

2016-10-01

Carbide derived carbons (CDCs) are promising materials for preparing integrated micro-supercapacitors, as on-chip CDC films are prepared via a process fully compatible with current silicon-based device technology. These films show good adherence on the substrate and high capacitance thanks to their unique nanoporous structure which can be fine-tuned by adjusting the synthesis parameters during chlorination of the metallic carbide precursor. The carbon porosity is mostly related to the synthesis temperature whereas the thickness of the films depends on the chlorination duration. Increasing the pore size allows the adsorption of large solvated ions from organic electrolytes and leads to higher energy densities. Here, we investigated the electrochemical behavior and performance of on-chip TiC-CDC in ionic liquid solvent mixtures of 1-ethyl-3-methylimidazolium tetrafluoroborate (EMIBF4) diluted in either acetonitrile or propylene carbonate via cyclic voltammetry and electrochemical impedance spectroscopy. Thin CDC films exhibited typical capacitive signature and achieved 169 F cm-3 in both electrolytes; 65% of the capacitance was still delivered at 1 V s-1. While increasing the thickness of the films, EMI+ transport limitation was observed in more viscous PC-based electrolyte. Nevertheless, the energy density reached 90 μW h cm-2 in 2M EMIBF4/ACN, confirming the interest of these CDC films for micro-supercapacitors applications.

Submicrosecond linear pulse transformer for 800 kV voltage with modular low-inductance primary power supply

NASA Astrophysics Data System (ADS)

Bykov, Yu. A.; Krastelev, E. G.; Popov, G. V.; Sedin, A. A.; Feduschak, V. F.

2016-12-01

A pulsed power source with voltage amplitude up to 800 kV for fast charging (350-400 ns) of the forming line of a high-current nanosecond accelerator is developed. The source includes capacitive energy storage and a linear pulse transformer. The linear transformer consists of a set of 20 inductors with circular ferromagnetic cores surrounded by primary windings inside of which a common stock adder of voltage with film-glycerol insulation is placed. The primary energy storage consists of ten modules, each of which is a low-inductance assembly of two capacitors with a capacitance of 0.35 μF and one gas switch mounted in the same frame. The total energy stored in capacitors is 5.5 kJ at the operating voltage of 40 kV. According to test results, the parameters of the equivalent circuit of the source are the following: shock capacitance = 17.5 nF, inductance = 2 μH, resistance = 3.2 Ω.

Submicrosecond linear pulse transformer for 800 kV voltage with modular low-inductance primary power supply

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bykov, Yu. A.; Krastelev, E. G., E-mail: ekrastelev@yandex.ru; Popov, G. V.

A pulsed power source with voltage amplitude up to 800 kV for fast charging (350–400 ns) of the forming line of a high-current nanosecond accelerator is developed. The source includes capacitive energy storage and a linear pulse transformer. The linear transformer consists of a set of 20 inductors with circular ferromagnetic cores surrounded by primary windings inside of which a common stock adder of voltage with film-glycerol insulation is placed. The primary energy storage consists of ten modules, each of which is a low-inductance assembly of two capacitors with a capacitance of 0.35 μF and one gas switch mounted inmore » the same frame. The total energy stored in capacitors is 5.5 kJ at the operating voltage of 40 kV. According to test results, the parameters of the equivalent circuit of the source are the following: shock capacitance = 17.5 nF, inductance = 2 μH, resistance = 3.2 Ω.« less

Vertically Aligned Niobium Nanowire Arrays for Fast-Charging Micro-Supercapacitors.

PubMed

Mirvakili, Seyed M; Hunter, Ian W

2017-07-01

Planar micro-supercapacitors are attractive for system on chip technologies and surface mount devices due to their large areal capacitance and energy/power density compared to the traditional oxide-based capacitors. In the present work, a novel material, niobium nanowires, in form of vertically aligned electrodes for application in high performance planar micro-supercapacitors is introduced. Specific capacitance of up to 1 kF m -2 (100 mF cm -2 ) with peak energy and power density of 2 kJ m -2 (6.2 MJ m -3 or 1.7 mWh cm -3 ) and 150 kW m -2 (480 MW m -3 or 480 W cm -3 ), respectively, is achieved. This remarkable power density, originating from the extremely low equivalent series resistance value of 0.27 Ω (2.49 µΩ m 2 or 24.9 mΩ cm 2 ) and large specific capacitance, is among the highest for planar micro-supercapacitors electrodes made of nanomaterials. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

New modeling method for the dielectric relaxation of a DRAM cell capacitor

NASA Astrophysics Data System (ADS)

Choi, Sujin; Sun, Wookyung; Shin, Hyungsoon

2018-02-01

This study proposes a new method for automatically synthesizing the equivalent circuit of the dielectric relaxation (DR) characteristic in dynamic random access memory (DRAM) without frequency dependent capacitance measurement. Charge loss due to DR can be observed by a voltage drop at the storage node and this phenomenon can be analyzed by an equivalent circuit. The Havariliak-Negami model is used to accurately determine the electrical characteristic parameters of an equivalent circuit. The DRAM sensing operation is performed in HSPICE simulations to verify this new method. The simulation demonstrates that the storage node voltage drop resulting from DR and the reduction in the sensing voltage margin, which has a critical impact on DRAM read operation, can be accurately estimated using this new method.

Graphene-Composite Carbon Nanofiber-Based Electrodes for Energy Storage Devices

DTIC Science & Technology

2014-04-18

electrochemical supercapacitors . 1. Development of highly conductive graphene composite CNF webs Graphene, a single-atom-thick sheet of sp 2 bonded...electrochemical supercapacitors and evaluated their performance. The capacitance increased with an increase in the amount of MnO2 NWs (duration of the deposition

Properties of AT Quartz Resonators on Wedgy Plates,

DTIC Science & Technology

assuming a small linear thickness variation ( wedginess ) across the plate. The model predicts that the standing waves corresponding to the different an... wedginess that will lower order an harmonics. The observed consequence of this behavior is that the motional capacitance of the lowest mode (the desired

Some limitations in applying classical EHD film-thickness formulae to a high-speed bearing

NASA Technical Reports Server (NTRS)

Coy, J. J.; Zaretsky, E. V.

1980-01-01

Elastohydrodynamic film thickness was measured for a 20 mm ball bearing using the capacitance technique. The bearing was thrust loaded to 90, 448, and 778 N. The corresponding maximum stresses on the inner race were 1.28, 2.09, and 2.45 GPa. Test speeds ranged from 400 to 14,000 rpm. Film thickness measurements were taken with four different lubricants: (1) synthetic paraffinic; (2) synthetic paraffinic with additives; (3) neopentylpolyol (tetra) ester; and (4) synthetic cycloaliphatic hydrocarbon traction fluid. The test bearing was mist lubricated. Test temperatures were 300, 338, and 393 K. The measured results were compared to theoretical predictions and are presented.

Study of surge current effects on solid tantalum capacitors

NASA Technical Reports Server (NTRS)

1980-01-01

Results are presented of a 2,000 hour cycled life test program conducted to determine the effect of short term surge current screening on approximately 47 micron f/volt solid tantalum capacitors. The format provides average values and standard deviations of the parameters, capacitance, dissipation factor, and equivalent series resistance at 120 Hz, 1KHz, abd 40 KHz.

Enhancing power density of strained In0.8Ga0.2As/AlAs resonant tunneling diode for terahertz radiation by optimizing emitter spacer layer thickness

NASA Astrophysics Data System (ADS)

Shi, Xiangyang; Wu, Yuanyuan; Wang, Ding; Su, Juan; Liu, Jie; Yang, Wenxian; Xiao, Meng; Tan, Wei; Lu, Shulong; Zhang, Jian

2017-12-01

We demonstrate both theoretically and experimentally that the power density of resonant tunneling diode (RTD) can be enhanced by optimizing emitter spacer layer thickness, in addition to reducing barrier thickness. Compared to the widely used epitaxial structure with ultrathin emitter spacer layer thickness, appropriate increasing the thickness will increase the voltage drop in accumulation region, leading to larger voltage widths of negative differential resistance region. By measuring J-V characteristics, the specific contact resistivity, and the self-capacitance, we theoretically analyze the maximum output power of the fabricated RTDs. It shows that the optimized In0.8Ga0.2As/AlAs RTD with 20 nm emitter spacer thickness and 5 μm2 mesa area theoretically possesses the capability to reach 3.1 mW at 300 GHz and 1.8 mW at 600 GHz.

Superlattice barrier varactors

NASA Technical Reports Server (NTRS)

Raman, C.; Sun, J. P.; Chen, W. L.; Munns, G.; East, J.; Haddad, G.

1992-01-01

SBV (Single Barrier Varactor) diodes have been proposed as alternatives to Schottky barrier diodes for harmonic multiplier applications. However, these show a higher current than expected. The excess current is due to X valley transport in the barrier. We present experimental results showing that the use of a superlattice barrier and doping spikes in the GaAs depletion regions on either side of the barrier can reduce the excess current and improve the control of the capacitance vs. voltage characteristic. The experimental results consist of data taken from two types of device structures. The first test structure was used to study the performance of AlAs/GaAs superlattice barriers. The wafer was fabricated into 90 micron diameter mesa diodes and the resulting current vs. voltage characteristics were measured. A 10 period superlattice structure with a total thickness of approximately 400 A worked well as an electron barrier. The structure had a current density of about one A/sq cm at one volt at room temperature. The capacitance variation of these structures was small because of the design of the GaAs cladding layers. The second test structure was used to study cladding layer designs. These wafers were InGaAs and InAlAs layers lattice matched to an InP substrate. The layers have n(+) doping spikes near the barrier to increase the zero bias capacitance and control the shape of the capacitance vs. voltage characteristic. These structures have a capacitance ratio of 5:1 and an abrupt change from maximum to minimum capacitance. The measurements were made at 80 K. Based on the information obtained from these two structures, we have designed a structure that combines the low current density barrier with the improved cladding layers. The capacitance and current-voltage characteristics from this structure are presented.

DOING Physics--Physics Activities for Groups.

ERIC Educational Resources Information Center

Zwicker, Earl, Ed.

1985-01-01

Shows how an electric stud finder (available from hardware stores for $15-20) is used to detect changes in capacitance produced by changes in thickness of a medium or in dielectric constant. Also describes how to construct an inexpensive motor from a battery, rubber bands, ceramic magnet, and copper wire. (DH)

Thin film integrated capacitors with sputtered-anodized niobium pentoxide dielectric for decoupling applications

NASA Astrophysics Data System (ADS)

Jacob, Susan

Electronics system miniaturization is a major driver for high-k materials. High-k materials in capacitors allow for high capacitance, enabling system miniaturization. Ta2O5 (k˜24) has been the dominant high-k material in the electronic industry for decoupling capacitors, filter capacitors, etc. In order to facilitate further system miniaturization, this project has investigated thin film integrated capacitors with Nb2O5 dielectric. Nb2O 5 has k˜41 and is a potential candidate for replacing Ta2O5. But, the presence of suboxides (NbO2 and NbO) in the dielectric deteriorates the electrical properties (leakage current, thermal instability of capacitance, etc.). Also, the high oxygen solubility of niobium results in oxygen diffusion from the dielectric to niobium metal, if any is present. The major purpose of this project was to check the ability of NbN as a diffusion barrier and fabricate thermally stable niobium capacitors. As a first step to produce niobium capacitors, the material characterizations of reactively sputtered Nb2O5 and NbN were done. Thickness and film composition, and crystal structures of the sputtered films were obtained and the deposition parameters for the desired stoichiometry were found. Also, anodized Nb2O5 was characterized for its stoichiometry and thickness. To study the effect of nitrides on capacitance and thermal stability, Ta2O5 capacitors were initially fabricated with and without TaN. The results showed that the nitride does not affect the capacitance, and that capacitors with TaN are stable up to 150°C. In the next step, niobium capacitors were first fabricated with anodized dielectric and the oxygen diffusion issues associated with capacitor processing were studied. Reactively sputtered Nb2O5 was anodized to form complete Nb2O5 (with few oxygen vacancies) and NbN was used to sandwich the dielectric. The capacitor fabrication was not successful due to the difficulties in anodizing the sputtered dielectric. Another method, anodizing reactively sputtered Nb2O5 and a thin layer of sputtered niobium metal yielded high yield (99%) capacitors. Capacitors were fabricated with and without NbN and the results showed 93% decrease in leakage for a capacitor with ˜2000 A dielectric when NbN was present in the structure. These capacitors could withstand 20 V and showed 2.7 muA leakage current at 5 V. These results were obtained after thermal storage at 100°C and 150°C in air for 168 hours at each temperature. Two set of experiments were performed using Ta2O5 dielectric: one to determine the effect of anodization end point on the thickness (capacitance) and the second to determine the effect of boiling the dielectric on functional yield. The anodization end point experiment showed that the final current of anodization along with the anodizing voltage determines the anodic oxide thickness. The lower the current, the thicker the films produced by anodization. Therefore, it was important to specify the final current along with the anodization voltage for oxide growth rate. The capacitors formed with boiled wafers showed better functional yield 3 out of 5 times compared with the unboiled wafer. Niobium anodization was studied for the Nb--->Nb 2O5 conversion ratio and the effect of anodization bath temperature on the oxide film; a color chart was prepared for thicknesses ranging from 1900 A - 5000 A. The niobium metal to oxide conversion ratio was found to change with temperature.

A compact perspiration meter system with capacitive humidity sensor for wearable health-care applications

NASA Astrophysics Data System (ADS)

Mitani, Yusuke; Miyaji, Kousuke; Kaneko, Satoshi; Uekura, Takaharu; Momose, Hideya; Johguchi, Koh

2018-04-01

This paper presents a compact wearable perspiration meter system using a 180-nm CMOS technology. With custom chip and board design, the proposed perspiration meter, which can measure a qualitative sweating rate, is integrated into 15 × 20 mm2. From the experimental results, the capacitances of the humidity sensors with analog-to-digital converter and band-gap reference circuits can operate accurately without hysteresis. In addition, a demonstration with simulated human skin is carried out to investigate the sensor’s performance under real environments. The proposed perspiration meter can output values equivalent to a conventional meter. As a result, it is verified that the proposed system can be used as a human sweat sensor for wearable application.

A study of timing properties of Silicon Photomultipliers

NASA Astrophysics Data System (ADS)

Avella, Paola; De Santo, Antonella; Lohstroh, Annika; Sajjad, Muhammad T.; Sellin, Paul J.

2012-12-01

Silicon Photomultipliers (SiPMs) are solid-state pixelated photodetectors. Lately these sensors have been investigated for Time of Flight Positron Emission Tomography (ToF-PET) applications, where very good coincidence time resolution of the order of hundreds of picoseconds imply spatial resolution of the order of cm in the image reconstruction. The very fast rise time typical of the avalanche discharge improves the time resolution, but can be limited by the readout electronics and the technology used to construct the device. In this work the parameters of the equivalent circuit of the device that directly affect the pulse shape, namely the quenching resistance and capacitance and the diode and parasitic capacitances, were calculated. The mean rise time obtained with different preamplifiers was also measured.

A MULTI-ELEMENT THICK GAS ELECTRON MULTIPLIER-BASED MICRODOSEMETER FOR MEASUREMENT OF NEUTRONS DOSE-EQUIVALENT: A MONTE CARLO STUDY.

PubMed

Moslehi, A; Raisali, G

2017-11-01

To determine the dose-equivalent of neutrons in an extended energy range, in the present work a multi-element thick gas electron multiplier-based microdosemeter made of PMMA (Perspex) walls of 10 mm in thickness is designed. Each cavity is filled with the propane-based tissue-equivalent (TE) gas simulating 1 µm of tissue. Also, a few weight fractions of 3He are assumed to be added to the TE gas. The dose-equivalents are determined for 11 neutron energies between thermal and 14 MeV using the lineal energy distributions calculated by Geant4 simulation toolkit and also the lineal energy-based quality factors. The results show that by adding 0.04% of 3He to the TE gas in each cavity, an energy-independent dose-equivalent response within 30% uncertainty around a median value of 0.91 in the above energy range is achieved. It is concluded that after its construction, the studied microdosemeter can be used to measure the dose-equivalent of neutrons, favorably. © The Author 2017. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Comparison of the frequency response characteristics of catheter-mounted piezoelectric and micromanometric phonotransducers.

PubMed

Garcia, J C; Layton, S A; Rubal, B J

1989-05-01

This study compares the frequency response characteristics of catheter-mounted piezoelectric sound transducers with micromanometric transducers. The tip of a 8F catheter with two piezoelectric transducers and two micromanometers was inserted into a water-filled chamber that had a speaker fixed at one end. The speaker was driven by a power amplifier and sine wave generator. The outputs of the transducers were connected to a low-level amplifier. The piezoelectric transducer behaved as a tunable high-pass filter that could be modified by altering the input impedance of the low level amplifier; the frequency response characteristics were examined at five input impedances ranging from 0.96 to 11.8 megohms. The peak-to-peak outputs of the piezoelectric and pressure transducers were recorded at frequency ranges from DC to 1 kHz with a wide-band oscilloscope. The ratio of the outputs from the piezotransducer and micromanometer (Vph/Vpr) was plotted vs. frequency for each input impedance and analyzed to determine the piezotransducer's output resistance and equivalent capacitance; roll-off frequencies were then calculated. The equivalent capacitance of the piezo-element was determined to be 500-700 picofarads. Series capacitance acted with network resistance to produce a predictable frequency-dependent change in signal amplitude and phase angle. The inherent noise of the pressure transducer was found to be approximately 0.2 mm Hg, while the noise of the piezoelectric transducer was immeasurably low. The piezoelectric phonotransducers were superior to micromanometer transducers in their higher gain and lower noise, suggesting that these transducers may prove useful to physiologic and clinical studies for measuring intravascular sound.

UV sensing using film bulk acoustic resonators based on Au/n-ZnO/piezoelectric-ZnO/Al structure.

PubMed

Bian, Xiaolei; Jin, Hao; Wang, Xiaozhi; Dong, Shurong; Chen, Guohao; Luo, J K; Deen, M Jamal; Qi, Bensheng

2015-03-16

A new type of ultraviolet (UV) light sensor based on film bulk acoustic wave resonator (FBAR) is proposed. The new sensor uses gold and a thin n-type ZnO layer deposited on the top of piezoelectric layer of FBAR to form a Schottky barrier. The Schottky barrier's capacitance can be changed with UV light, resulting in an enhanced shift in the entire FBAR's resonant frequency. The fabricated UV sensor has a 50 nm thick n-ZnO semiconductor layer with a carrier concentration of ~ 10(17) cm(-3). A large frequency downshift is observed when UV light irradiates the FBAR. With 365 nm UV light of intensity 1.7 mW/cm(2), the FBAR with n-ZnO/Au Schottky diode has 250 kHz frequency downshift, much larger than the 60 kHz frequency downshift in a conventional FBAR without the n-ZnO layer. The shift in the new FBAR's resonant frequency is due to the junction formed between Au and n-ZnO semiconductor and its properties changes with UV light. The experimental results are in agreement with the theoretical analysis using an equivalent circuit model of the new FBAR structure.

Performance investigation of InAs based dual electrode tunnel FET on the analog/RF platform

NASA Astrophysics Data System (ADS)

Anand, Sunny; Sarin, R. K.

2016-09-01

In this paper for the first time, InAs based doping-less Tunnel FET is proposed and investigated. This paper also demonstrates and discusses the impact of gate stacking (SiO2 + HfO2) with equivalent oxide thickness EOT = 0.8 for analog/RF performance. The charge plasma technique is used to form source/drain region on an intrinsic InAs body by selecting proper work function of metal electrode. The paper compares different combinations of gate stacking (SiO2 and HfO2) on the basis of different analog and RF parameters such as transconductance (gm), transconductance to drive current ratio (gm/ID), output conductance (gd), intrinsic gain (AV), total gate capacitance (Cgg) and unity-gain cutoff frequency (fT). The proposed device produces an ON state current of ION ∼6 mA along with ION/IOFF ∼1012, point subthreshold slope (SS ∼ 1.9 mV/dec), average subthreshold slope (AV-SS ∼ 14.2 mV/dec) and cut-off frequency in Terahertz. The focus of this work is to eliminate the fabrication issues and providing the enhanced performance compared to doped device.

Ruthenium films by digital chemical vapor deposition: Selectivity, nanostructure, and work function

NASA Astrophysics Data System (ADS)

Dey, Sandwip K.; Goswami, Jaydeb; Gu, Diefeng; de Waard, Henk; Marcus, Steve; Werkhoven, Chris

2004-03-01

Ruthenium electrodes were selectively deposited on photoresist-patterned HfO2 surface [deposited on a SiOx/Si wafer by atomic layer deposition (ALD)] by a manufacturable, digital chemical vapor deposition (DCVD) technique. DCVD of Ru was carried out at 280-320 °C using an alternate delivery of Bis (2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)Ru (dissolved in tetrahydrofuran) and oxygen. The as-deposited Ru films were polycrystalline, dense, and conducting (resistivity ˜20.6 μΩ cm). However, Rutherford backscattering spectroscopy, x-ray photoelectron spectroscopy, and high-resolution electron microscopy results indicate the presence of an amorphous RuOx at the Ru grain boundaries and at the DCVD-Ru/ALD-HfO2 interface. The estimated work function of DCVD-Ru on ALD-HfO2 was ˜5.1 eV. Moreover, the equivalent oxide thickness, hysteresis in capacitance-voltage, and leakage current density at -2 V of the HfO2/SiOx dielectric, after forming gas (95% N2+5% H2) annealing at 450 °C for 30 min, were 1.4 nm, 20 mV, and 7.4×10-7 A cm-2, respectively.

Development of electrochemical super capacitors for EMA applications

NASA Technical Reports Server (NTRS)

Kosek, J. A.; Dunning, T.; Laconti, A. B.

1995-01-01

In a NASA SBIR Phase I program (Contract No. NAS8-40119), Giner, Inc. evaluated the feasibility of fabricating an all-solid-ionomer multicell electrochemical capacitor having a unit cell capacitance greater than 2 F/sq cm and a repeating element thickness of 6 mils. This capacitor can possibly be used by NASA as a high-rate energy source for electromechanical actuator (EMA) activation for advanced space missions. The high unit cell capacitance and low repeating element thickness will allow for the fabrication of a low-volume, low-weight device, favorable characteristics for space applications. These same characteristics also make the capacitor attractive for terrestrial applications, such as load-leveling batteries or fuel cells in electric vehicle applications. Although the projected energy densities for electrochemical capacitors are about two orders of magnitude lower than that of batteries, the high-power-density characteristics of these devices render them as potentially viable candidates for meeting pulse or peak electrical power requirements for some anticipated aerospace mission scenarios, especially those with discharge times on the millisecond to second time scale. On a volumetric or gravimetric basis, the advantages of utilizing electrochemical capacitors rather than batteries for meeting the peak power demands associated with a specific mission scenario will largely depend upon the total and pulse durations of the power peaks. The effect of preparation conditions on RuO(x), the active component in an all-solid-ionomer electrochemical capacitor, was evaluated during this program. Methods were identified to prepare RuO(x) having a surface areagreater than 180 sq m/g, and a capacitance of greater than 2 F/sq cm. Further efforts to reproducibly obtain these high-surface-area materials in scaled-up batches will be evaluated in Phase 2. During this Phase 1 program we identified a superior Nafion 105 membrane, having a film thickness of 5 mils, that showed excellent performance in our all-solid-ionomer capacitors and resulted in electrochemical capacitors with a repeating element thickness of 8 mils. We are currently working with membrane manufacturers to obtain a high performance membrane in less than 3 mil thickness to obtain a repeating element thickness of 6 mils or less. A 10-cell all-solid ionomer capacitor stack, with each cell having a 222 sq cm active area, was fabricated and evaluated as part of the Phase 1 program. Further Scale-up of a high-energy-density stack is plannedin Phase 2.

One-Pot Synthesis of Tunable Crystalline Ni3 S4 @Amorphous MoS2 Core/Shell Nanospheres for High-Performance Supercapacitors.

PubMed

Zhang, Yu; Sun, Wenping; Rui, Xianhong; Li, Bing; Tan, Hui Teng; Guo, Guilue; Madhavi, Srinivasan; Zong, Yun; Yan, Qingyu

2015-08-12

Transition metal sulfides gain much attention as electrode materials for supercapacitors due to their rich redox chemistry and high electrical conductivity. Designing hierarchical nanostructures is an efficient approach to fully utilize merits of each component. In this work, amorphous MoS(2) is firstly demonstrated to show specific capacitance 1.6 times as that of the crystalline counterpart. Then, crystalline core@amorphous shell (Ni(3)S(4)@MoS(2)) is prepared by a facile one-pot process. The diameter of the core and the thickness of the shell can be independently tuned. Taking advantages of flexible protection of amorphous shell and high capacitance of the conductive core, Ni(3)S(4) @amorphous MoS(2) nanospheres are tested as supercapacitor electrodes, which exhibit high specific capacitance of 1440.9 F g(-1) at 2 A g(-1) and a good capacitance retention of 90.7% after 3000 cycles at 10 A g(-1). This design of crystalline core@amorphous shell architecture may open up new strategies for synthesizing promising electrode materials for supercapacitors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Reciprocal capacitance transients?

NASA Astrophysics Data System (ADS)

Gfroerer, Tim; Simov, Peter; Wanlass, Mark

2007-03-01

When the reverse bias across a semiconductor diode is changed, charge carriers move to accommodate the appropriate depletion thickness, producing a simultaneous change in the device capacitance. Transient capacitance measurements can reveal inhibited carrier motion due to trapping, where the depth of the trap can be evaluated using the temperature-dependent escape rate. However, when we employ this technique on a GaAs0.72P0.28 n+/p diode (which is a candidate for incorporation in multi-junction solar cells), we observe a highly non-exponential response under a broad range of experimental conditions. Double exponential functions give good fits, but lead to non-physical results. The deduced rates depend on the observation time window and fast and slow rates, which presumably correspond to deep and shallow levels, have identical activation energies. Meanwhile, we have discovered a universal linear relationship between the inverse of the capacitance and time. An Arrhenius plot of the slope of the reciprocal of the transient yields an activation energy of approximately 0.4 eV, independent of the observation window and other experimental conditions. The reciprocal behavior leads us to hypothesize that hopping, rather than escape into high-mobility bands, may govern the transport of trapped holes in this system.

Threshold-Voltage Shifts in Organic Transistors Due to Self-Assembled Monolayers at the Dielectric: Evidence for Electronic Coupling and Dipolar Effects.

PubMed

Aghamohammadi, Mahdieh; Rödel, Reinhold; Zschieschang, Ute; Ocal, Carmen; Boschker, Hans; Weitz, R Thomas; Barrena, Esther; Klauk, Hagen

2015-10-21

The mechanisms behind the threshold-voltage shift in organic transistors due to functionalizing of the gate dielectric with self-assembled monolayers (SAMs) are still under debate. We address the mechanisms by which SAMs determine the threshold voltage, by analyzing whether the threshold voltage depends on the gate-dielectric capacitance. We have investigated transistors based on five oxide thicknesses and two SAMs with rather diverse chemical properties, using the benchmark organic semiconductor dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene. Unlike several previous studies, we have found that the dependence of the threshold voltage on the gate-dielectric capacitance is completely different for the two SAMs. In transistors with an alkyl SAM, the threshold voltage does not depend on the gate-dielectric capacitance and is determined mainly by the dipolar character of the SAM, whereas in transistors with a fluoroalkyl SAM the threshold voltages exhibit a linear dependence on the inverse of the gate-dielectric capacitance. Kelvin probe force microscopy measurements indicate this behavior is attributed to an electronic coupling between the fluoroalkyl SAM and the organic semiconductor.

A Micromechanical RF Channelizer

NASA Astrophysics Data System (ADS)

Akgul, Mehmet

The power consumption of a radio generally goes as the number and strength of the RF signals it must process. In particular, a radio receiver would consume much less power if the signal presented to its electronics contained only the desired signal in a tiny percent bandwidth frequency channel, rather than the typical mix of signals containing unwanted energy outside the desired channel. Unfortunately, a lack of filters capable of selecting single channel bandwidths at RF forces the front-ends of contemporary receivers to accept unwanted signals, and thus, to operate with sub-optimal efficiency. This dissertation focuses on the degree to which capacitive-gap transduced micromechanical resonators can achieve the aforementioned RF channel-selecting filters. It aims to first show theoretically that with appropriate scaling capacitive-gap transducers are strong enough to meet the needed coupling requirements; and second, to fully detail an architecture and design procedure needed to realize said filters. Finally, this dissertation provides an actual experimentally demonstrated RF channel-select filter designed using the developed procedures and confirming theoretical predictions. Specifically, this dissertation introduces four methods that make possible the design and fabrication of RF channel-select filters. The first of these introduces a small-signal equivalent circuit for parallel-plate capacitive-gap transduced micromechanical resonators that employs negative capacitance to model the dependence of resonance frequency on electrical stiffness in a way that facilitates the analysis of micromechanical circuits loaded with arbitrary electrical impedances. The new circuit model not only correctly predicts the dependence of electrical stiffness on the impedances loading the input and output electrodes of parallel-plate capacitive-gap transduced micromechanical device, but does so in a visually intuitive way that identifies current drive as most appropriate for applications that must be stable against environmental perturbations, such as acceleration or power supply variations. Measurements on fabricated devices in fact confirm predictions by the new model of up to 4x improvement in frequency stability against DC-bias voltage variations for contour-mode disk resonators as the resistance loading their ports increases. By enhancing circuit visualization, this circuit model makes more obvious the circuit design procedures and topologies most beneficial for certain mechanical circuits, e.g., filters and oscillators. The second method enables simultaneous low motional resistance ( Rx 70,000) at 61 MHz using an improved ALD-partial electrode-to-resonator gap filling technique that reduces the Q-limiting surface losses of previous renditions by adding an alumina pre-coating before ALD of the gap-filling high-k dielectric. This effort increases the Q over the ˜10,000 of previous renditions by more than 6x towards demonstration of the first VHF micromechanical resonators in any material, piezoelectric or not, to meet the simultaneous high Q (>50,000) and low motional resistance Rx (< 200O) specs highly desired for front-end frequency channelizer requirements in cognitive and software-defined radio architectures. The methods presented in this chapter finally overcome the high impedance bottleneck that has plagued capacitively transduced micro-mechanical resonators over the past decade. The third method introduces a capacitively transduced micromechanical resonator constructed in hot filament CVD boron-doped microcrystalline diamond (MCD) structural material that posts a measured Q of 146,580 at 232.441 kHz, which is 3x higher than the previous high for conductive polydiamond. Moreover, radial-contour mode disk resonators fabricated in the same MCD film and using material mismatched stems exhibit a Q of 71,400 at 299.86 MHz. The material used here further exhibits an acoustic velocity of 18,516 m/s, which is now the highest to date among available surface micromachinable materials. For many potential applications, the hot filament CVD method demonstrated in this work is quite enabling, since it provides a much less expensive method than microwave CVD based alternatives for depositing doped CVD diamond over large wafers (e.g., 8") for batch fabrication. The first three methods described so far focus on a single vibrating disk resonator and improve its electrical equivalent modeling, C x/Co, and Q. Once we craft the resonator that meets the challenging design requirements of RF channel-select filters, the last method presents a design hierarchy that achieves the desired filter response with a specific center frequency, bandwidth, and filter termination resistance. The design procedure culminates in specific values for all mechanical geometry variables necessary for the filter layout, such as disk radii, and beam widths; and process design variables such as resonator material thickness and capacitive actuation gap spacing. Finally, the experimental results introduce a 39nm-gap capacitive transducer, voltage-controlled frequency tuning, and a stress relieving coupled array design that enable a 0.09% bandwidth 223.4 MHz channel-select filter with only 2.7dB of in-band insertion loss and 50dB rejection of out-of-band interferers. This amount of rejection is more than 23dB better than previous capacitive-gap transduced filter designs that did not benefit from sub-50nm gaps. It also comes in tandem with a 20dB shape factor of 2.7 realized by a hierarchical mechanical circuit design utilizing 206 micromechanical circuit elements, all contained in an area footprint of only 600mumx420mum. The key to such low insertion loss for this tiny percent bandwidth is Q's>8,800 supplied by polysilicon disk resonators employing for the first time capacitive transducer gaps small enough to generate coupling strengths of C x/Co ˜0.1%, which is a 6.1x improvement over previous efforts. The filter structure utilizes electrical tuning to correct frequency mismatches due to process variations, where a dc tuning voltage of 12.1 V improves the filter insertion loss by 1.8 dB and yields the desired equiripple passband shape. An electrical equivalent circuit is presented that captures not only the ideal filter response, but also parasitic non-idealities that create electrical feed-through, where simulation of the derived equivalent circuit matches the measured filter spectrum closely both in-band and out-of-band. The combined 2.7dB passband insertion loss and 50dB stopband rejection of the demonstrated 206-element 0.09% bandwidth 223.4-MHz differential micromechanical disk filter represents a landmark for capacitive-gap transduced micromechanical resonator technology. This demonstration proves that the mere introduction of small gaps, on the order of 39 nm, goes a long way towards moving this technology from a research curiosity to practical performance specs commensurate with the needs of actual RF channel-selecting receiver front-ends. It also emphasizes the need for tuning and defensive stress-relieving structural design when percent bandwidths and gaps shrink, all demonstrated by the work herein. Perhaps most encouraging is that the models presented in dissertation used to design the filter and predict its behavior seem to be all be spot on. This means that predictions using these models foretelling 1-GHz filters with sub-200O impedances enabled by 20nm-gaps might soon come true, bringing this technology ever closer to someday realizing the ultra-low power channel-selecting communication front-ends targeted for autonomous set-and-forget sensor networks. Work towards these goals continues.

Capacitive Detection of Low-Enthalpy, Higher-Order Phase Transitions in Synthetic and Natural Composition Lipid Membranes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Taylor, Graham J.; Heberle, Frederick A.; Seinfeld, Jason S.

In-plane lipid organization and phase separation in natural membranes play key roles in regulating many cellular processes. Highly cooperative, first-order phase transitions in model membranes consisting of few lipid components are well understood and readily detectable via calorimetry, densitometry, and fluorescence. However, far less is known about natural membranes containing numerous lipid species and high concentrations of cholesterol, for which thermotropic transitions are undetectable by the above-mentioned techniques. We demonstrate that membrane capacitance is highly sensitive to low-enthalpy thermotropic transitions taking place in complex lipid membranes. Specifically, we measured the electrical capacitance as a function of temperature for droplet interfacemore » bilayer model membranes of increasing compositional complexity, namely, (a) a single lipid species, (b) domain-forming ternary mixtures, and (c) natural brain total lipid extract (bTLE). We observed that, for single-species lipid bilayers and some ternary compositions, capacitance exhibited an abrupt, temperature-dependent change that coincided with the transition detected by other techniques. In addition, capacitance measurements revealed transitions in mixed-lipid membranes that were not detected by the other techniques. Most notably, capacitance measurements of bTLE bilayers indicated a transition at ~38 °C not seen with any other method. Likewise, capacitance measurements detected transitions in some well-studied ternary mixtures that, while known to yield coexisting lipid phases, are not detected with calorimetry or densitometry. These results indicate that capacitance is exquisitely sensitive to low-enthalpy membrane transitions because of its sensitivity to changes in bilayer thickness that occur when lipids and excess solvent undergo subtle rearrangements near a phase transition. Our findings also suggest that heterogeneity confers stability to natural membranes that function near transition temperatures by preventing unwanted defects and macroscopic demixing associated with high-enthalpy transitions commonly found in simpler mixtures.« less

Capacitive Detection of Low-Enthalpy, Higher-Order Phase Transitions in Synthetic and Natural Composition Lipid Membranes

DOE PAGES

Taylor, Graham J.; Heberle, Frederick A.; Seinfeld, Jason S.; ...

2017-08-15

In-plane lipid organization and phase separation in natural membranes play key roles in regulating many cellular processes. Highly cooperative, first-order phase transitions in model membranes consisting of few lipid components are well understood and readily detectable via calorimetry, densitometry, and fluorescence. However, far less is known about natural membranes containing numerous lipid species and high concentrations of cholesterol, for which thermotropic transitions are undetectable by the above-mentioned techniques. We demonstrate that membrane capacitance is highly sensitive to low-enthalpy thermotropic transitions taking place in complex lipid membranes. Specifically, we measured the electrical capacitance as a function of temperature for droplet interfacemore » bilayer model membranes of increasing compositional complexity, namely, (a) a single lipid species, (b) domain-forming ternary mixtures, and (c) natural brain total lipid extract (bTLE). We observed that, for single-species lipid bilayers and some ternary compositions, capacitance exhibited an abrupt, temperature-dependent change that coincided with the transition detected by other techniques. In addition, capacitance measurements revealed transitions in mixed-lipid membranes that were not detected by the other techniques. Most notably, capacitance measurements of bTLE bilayers indicated a transition at ~38 °C not seen with any other method. Likewise, capacitance measurements detected transitions in some well-studied ternary mixtures that, while known to yield coexisting lipid phases, are not detected with calorimetry or densitometry. These results indicate that capacitance is exquisitely sensitive to low-enthalpy membrane transitions because of its sensitivity to changes in bilayer thickness that occur when lipids and excess solvent undergo subtle rearrangements near a phase transition. Our findings also suggest that heterogeneity confers stability to natural membranes that function near transition temperatures by preventing unwanted defects and macroscopic demixing associated with high-enthalpy transitions commonly found in simpler mixtures.« less

Micromachined capacitive ultrasonic immersion transducer array

NASA Astrophysics Data System (ADS)

Jin, Xuecheng

Capacitive micromachined ultrasonic transducers (cMUTs) have emerged as an attractive alternative to conventional piezoelectric ultrasonic transducers. They offer performance advantages of wide bandwidth and sensitivity that have heretofore been attainable. In addition, micromachining technology, which has benefited from the fast-growing microelectronics industry, enables cMUT array fabrication and electronics integration. This thesis describes the design and fabrication of micromachined capacitive ultrasonic immersion transducer arrays. The basic transducer electrical equivalent circuit is derived from Mason's theory. The effects of Lamb waves and Stoneley waves on cross coupling and acoustic losses are discussed. Electrical parasitics such as series resistance and shunt capacitance are also included in the model of the transducer. Transducer fabrication technology is systematically studied. Device dimension control in both vertical and horizontal directions, process alternatives and variations in membrane formation, via etch and cavity sealing, and metalization as well as their impact on transducer performance are summarized. Both 64 and 128 element 1-D array transducers are fabricated. Transducers are characterized in terms of electrical input impedance, bandwidth, sensitivity, dynamic range, impulse response and angular response, and their performance is compared with theoretical simulation. Various schemes for cross coupling reduction is analyzed, implemented, and verified with both experiments and theory. Preliminary results of immersion imaging are presented using 64 elements 1-D array transducers for active source imaging.

High voltage electrochemical double layer capacitors using conductive carbons as additives

NASA Astrophysics Data System (ADS)

Michael, M. S.; Prabaharan, S. R. S.

We describe here an interesting approach towards electrochemical capacitors (ECCs) using graphite materials (as being used as conductive additives in rechargeable lithium-ion battery cathodes) in a Li + containing organic electrolyte. The important result is that we achieved a voltage window of >4 V, which is rather large, compared to the standard window of 2.5 V for ordinary electric double layer capacitors (DLCs). The capacitor performance was evaluated by cyclic voltammetry (CV) and galvanostatic charge/discharge techniques. From charge-discharge studies of the symmetrical device (for instance, SFG6 carbon electrode), a specific capacitance of up to 14.5 F/g was obtained at 16 mA/cm 2 current rate and at a low current rate (3 mA/cm 2), a higher value was obtained (63 F/g). The specific capacitance decreased about 25% after 1000 cycles compared to the initial discharge process. The performances of these graphites are discussed in the light of both double layer capacitance (DLC) and pseudocapacitance (battery-like behavior). The high capacitance obtained was not only derived from the current-transient capacitive behavior but is also attributed to pseudocapacitance associated with some kind of faradaic reaction, which could probably occur due to Li + intercalation/deintercalation reactions into graphitic layers of the carbons used. The ac impedance (electrochemical impedances spectroscopy, EIS) measurements were also carried out to evaluate the capacitor parameters such as equivalent series resistance (ESR) and frequency dependent capacitance ( Cfreq). Cyclic voltammetry measurements were also performed to evaluate the cycling behavior of the carbon electrodes and the non-rectangular shaped voltammograms revealed the non-zero time constant [ τ( RC)≠0] confirming that the current contains a transient as well as steady-state components.

Determination of shielding requirements for mammography.

PubMed

Okunade, Akintunde Akangbe; Ademoroti, Olalekan Albert

2004-05-01

Shielding requirements for mammography when considerations are to be given to attenuation by compression paddle, breast tissue, grid and image receptor (intervening materials) has been investigated. By matching of the attenuation and hardening properties, comparisons are made between shielding afforded by breast tissue materials (water, Lucite and 50%-50% adipose-glandular tissue) and some materials considered for shielding diagnostic x-ray beams, namely lead, steel and gypsum wallboard. Results show that significant differences exist between the thickness required to produce equal attenuation and that required to produce equal hardening of a given incident beam. While attenuation equivalent thickness produces equal exposure, it does not produce equal hardening. For shielding purposes, equivalence in exposure reduction without equivalence in penetrating power of an emerging beam does not amount to equivalence in shielding affordable by two different materials. Presented are models and results of sample calculations of additional shielding requirements apart from that provided by intervening materials. The shielding requirements for the integrated beam emerging from intervening materials are different from those for the integrated beam emerging from materials (lead/steel/gypsum wallboard) with attenuation equivalent thicknesses of these intervening materials.

New equivalent-electrical circuit model and a practical measurement method for human body impedance.

PubMed

Chinen, Koyu; Kinjo, Ichiko; Zamami, Aki; Irei, Kotoyo; Nagayama, Kanako

2015-01-01

Human body impedance analysis is an effective tool to extract electrical information from tissues in the human body. This paper presents a new measurement method of impedance using armpit electrode and a new equivalent circuit model for the human body. The lowest impedance was measured by using an LCR meter and six electrodes including armpit electrodes. The electrical equivalent circuit model for the cell consists of resistance R and capacitance C. The R represents electrical resistance of the liquid of the inside and outside of the cell, and the C represents high frequency conductance of the cell membrane. We propose an equivalent circuit model which consists of five parallel high frequency-passing CR circuits. The proposed equivalent circuit represents alpha distribution in the impedance measured at a lower frequency range due to ion current of the outside of the cell, and beta distribution at a high frequency range due to the cell membrane and the liquid inside cell. The calculated values by using the proposed equivalent circuit model were consistent with the measured values for the human body impedance.

Calculation of water equivalent thickness of materials of arbitrary density, elemental composition and thickness in proton beam irradiation

NASA Astrophysics Data System (ADS)

Zhang, Rui; Newhauser, Wayne D.

2009-03-01

In proton therapy, the radiological thickness of a material is commonly expressed in terms of water equivalent thickness (WET) or water equivalent ratio (WER). However, the WET calculations required either iterative numerical methods or approximate methods of unknown accuracy. The objective of this study was to develop a simple deterministic formula to calculate WET values with an accuracy of 1 mm for materials commonly used in proton radiation therapy. Several alternative formulas were derived in which the energy loss was calculated based on the Bragg-Kleeman rule (BK), the Bethe-Bloch equation (BB) or an empirical version of the Bethe-Bloch equation (EBB). Alternative approaches were developed for targets that were 'radiologically thin' or 'thick'. The accuracy of these methods was assessed by comparison to values from an iterative numerical method that utilized evaluated stopping power tables. In addition, we also tested the approximate formula given in the International Atomic Energy Agency's dosimetry code of practice (Technical Report Series No 398, 2000, IAEA, Vienna) and stopping power ratio approximation. The results of these comparisons revealed that most methods were accurate for cases involving thin or low-Z targets. However, only the thick-target formulas provided accurate WET values for targets that were radiologically thick and contained high-Z material.

Reaching state-of-the art requirements for MIM capacitors with a single-layer anodic Al2O3 dielectric and imprinted electrodes

NASA Astrophysics Data System (ADS)

Hourdakis, Emmanouel; Nassiopoulou, Androula G.

2017-07-01

Metal-Insulator-Metal (MIM) capacitors with a high capacitance density and low non-linearity coefficient using a single-layer dielectric of barrier-type anodic alumina (Al2O3) and an imprinted bottom Al electrode are presented. Imprinting of the bottom electrode aimed at increasing the capacitor effective surface area by creating a three-dimensional MIM capacitor architecture. The bottom Al electrode was only partly nanopatterned so as to ensure low series resistance of the MIM capacitor. With a 3 nm thick anodic Al2O3 dielectric, the capacitor with the imprinted electrode showed a 280% increase in capacitance density compared to the flat electrode capacitor, reaching a value of 20.5 fF/μm2. On the other hand, with a 30 nm thick anodic Al2O3 layer, the capacitance density was 7.9 fF/μm2 and the non-linearity coefficient was as low as 196 ppm/V2. These values are very close to reaching all requirements of the last International Technology Roadmap for Semiconductors for MIM capacitors [ITRS, http://www.itrs2.net/2013-itrs.html for ITRS Roadmap (2013)], and they are achieved by a single-layer dielectric instead of the complicated dielectric stacks of the literature. The obtained results constitute a real progress compared to previously reported results by our group for MIM capacitors using imprinted electrodes.

3D nanoporous graphene films converted from liquid-crystalline holey graphene oxide for thin and high-performance supercapacitors

NASA Astrophysics Data System (ADS)

Wang, Bin; Liu, Jinzhang; Zhao, Yi; Zheng, Dezhi; Li, Yan; Sha, Jiangbo

2018-01-01

Holey graphene oxide (HGO) is prepared and its liquid crystal (LC) formation in water is investigated. The blade-coated LC-HGO hydrogel is hydrothermally reduced to form 3D nanoporous films used as supercapacitor electrodes. Holey graphene sheets are rumpled and interconnected to form a cellular structure with pore size around 100 nm during the reduction process. Reduced HGO films with different thicknesses are integrated into solid-state symmetric supercapacitors and their electrochemical performances are studied. High specific capacitance up to 304 F g-1 and high volumetric capacitance around 400 F cm-3 are achieved from our thin and flexible devices.

TiO2-Based Indium Phosphide Metal-Oxide-Semiconductor Capacitor with High Capacitance Density.

PubMed

Cheng, Chun-Hu; Hsu, Hsiao-Hsuan; Chou, Kun-i

2015-04-01

We report a low-temperature InP p-MOS with a high capacitance density of 2.7 µF/cm2, low leakage current of 0.77 A/cm2 at 1 V and tight current distribution. The high-density and low-leakage InP MOS was achieved by using high-κ TiLaO dielectric and ultra-thin SiO2 buffer layer with a thickness of less than 0.5 nm. The obtained EOT can be aggressively scaled down to < 1 nm through the use of stacked TiLaO/SiO2 dielectric, which has the potential for the future application of high mobility III-V CMOS devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amalraj, Rex; Sambandan, Sanjiv, E-mail: sanjiv@iap.iisc.ernet.in

Thin film transistors (TFTs) on elastomers promise flexible electronics with stretching and bending. Recently, there have been several experimental studies reporting the behavior of TFTs under bending and buckling. In the presence of stress, the insulator capacitance is influenced due to two reasons. The first is the variation in insulator thickness depending on the Poisson ratio and strain. The second is the geometric influence of the curvature of the insulator-semiconductor interface during bending or buckling. This paper models the role of curvature on TFT performance and brings to light an elegant result wherein the TFT characteristics is dependent on themore » area under the capacitance-distance curve. The paper compares models with simulations and explains several experimental findings reported in literature.« less

Dendritic Ni(Cu)-polypyrrole hybrid films for a pseudo-capacitor.

PubMed

Choi, Bit Na; Chun, Woo Won; Qian, Aniu; Lee, So Jeong; Chung, Chan-Hwa

2015-11-28

Dendritic Ni(Cu)-polypyrrole hybrid films are fabricated for a pseudo-capacitor in a unique morphology using two simple methods: electro-deposition and electrochemical de-alloying. Three-dimensional structures of porous dendrites are prepared by electro-deposition within the hydrogen evolution reaction (HER) at a high cathodic potential; the high-surface-area structure provides sufficient redox reactions between the electrodes and the electrolyte. The dependence of the active-layer thickness on the super-capacitor performance is also investigated, and the 60 μm-thick Ni(Cu)PPy hybrid electrode presents the highest performance of 659.52 F g(-1) at the scan rate of 5 mV s(-1). In the thicker layers, the specific capacitance became smaller due to the diffusion limitation of the ions in an electrolyte. The polypyrrole-hybridization on the porous dendritic Ni(Cu) electrode provides superior specific capacitance and excellent cycling stability due to the improvement in electric conductivity by the addition of conducting polypyrrole in the matrices of the dendritic nano-porous Ni(Cu) layer and the synergistic effect of composite materials.

Dose measurement in heterogeneous phantoms with an extrapolation chamber

NASA Astrophysics Data System (ADS)

Deblois, Francois

A hybrid phantom-embedded extrapolation chamber (PEEC) made of Solid Water(TM) and bone-equivalent material was used for determining absolute dose in a bone-equivalent phantom irradiated with clinical radiation beams (cobalt-60 gamma rays; 6 and 18 MV x-rays; and 9 and 15 MeV electrons). The dose was determined with the Spencer-Attix cavity theory, using ionization gradient measurements and an indirect determination of the chamber air-mass through measurements of chamber capacitance. The air gaps used were between 2 and 3 mm and the sensitive air volume of the extrapolation chamber was remotely controlled through the motion of the motorized piston with a precision of +/-0.0025 mm. The collected charge was corrected for ionic recombination and diffusion in the chamber air volume following the standard two-voltage technique. Due to the hybrid chamber design, correction factors accounting for scatter deficit and electrode composition were determined and applied in the dose equation to obtain dose data for the equivalent homogeneous bone phantom. Correction factors for graphite electrodes were calculated with Monte Carlo techniques and the calculated results were verified through relative air cavity dose measurements for three different polarizing electrode materials: graphite, steel, and brass in conjunction with a graphite collecting electrode. Scatter deficit, due mainly to loss of lateral scatter in the hybrid chamber, reduces the dose to the air cavity in the hybrid PEEC in comparison with full bone PEEC from 0.7 to ˜2% depending on beam quality and energy. In megavoltage photon and electron beams, graphite electrodes do not affect the dose measurement in the Solid Water(TM) PEEC but decrease the cavity dose by up to 5% in the bone-equivalent PEEC even for very thin graphite electrodes (<0.0025 cm). The collecting electrode material in comparison with the polarizing electrode material has a larger effect on the electrode correction factor; the thickness of thin electrodes, on the other hand, has a negligible effect on dose determination. The uncalibrated hybrid PEEC is an accurate and absolute device for measuring the dose directly in bone material in conjunction with appropriate correction factors determined with Monte Carlo techniques.

Ceramic MEMS Designed for Wireless Pressure Monitoring in the Industrial Environment

PubMed Central

Pavlin, Marko; Belavic, Darko; Novak, Franc

2012-01-01

This paper presents the design of a wireless pressure-monitoring system for harsh-environment applications. Two types of ceramic pressure sensors made with a low-temperature cofired ceramic (LTCC) were considered. The first type is a piezoresistive strain gauge pressure sensor. The second type is a capacitive pressure sensor, which is based on changes of the capacitance values between two electrodes: one electrode is fixed and the other is movable under an applied pressure. The design was primarily focused on low power consumption. Reliable operation in the presence of disturbances, like electromagnetic interference, parasitic capacitances, etc., proved to be contradictory constraints. A piezoresistive ceramic pressure sensor with a high bridge impedance was chosen for use in a wireless pressure-monitoring system and an acceptable solution using energy-harvesting techniques has been achieved. The described solution allows for the integration of a sensor element with an energy harvester that has a printed thick-film battery and complete electronics in a single substrate packaged inside a compact housing. PMID:22368471

Ultrathin NiO nanoflakes electrode materials for supercapacitors

NASA Astrophysics Data System (ADS)

Xiao, Huanhao; Qu, Fengyu; Wu, Xiang

2016-01-01

In this work, large scale ultrathin NiO nanoflakes grown on nickel foam have been successfully obtained by a facile, low cost and eco-friendly route under mild temperature. The average thickness of the as-obtained NiO nanoflakes is about 10 nm. And they possess large surface area of 89.56 m2 g-1 and the dominant pore size of 2.313 nm. The electrochemical properties of the obtained product were evaluated by cyclic voltammetry (CV), galvanostatic charge-discharge measurement and electrochemical impedance spectroscopy (EIS). The electrochemical tests demonstrate the highest discharge areal capacitance of 870 mF cm-2 at 1 mA cm-2 and excellent long cycle-life stability with 84.2% of its discharge areal capacitance retention after 6000 cycles at the current density of 10 mA cm-2. The remarkable electrochemical capacitive performance revealed NiO nanoflakes grown on nickel foam might be promising supercapacitor electrode materials for future energy storage applications.

Solution growth of NiO nanosheets supported on Ni foam as high-performance electrodes for supercapacitors

PubMed Central

2014-01-01

Well-aligned nickel oxide (NiO) nanosheets with the thickness of a few nanometers supported on a flexible substrate (Ni foam) have been fabricated by a hydrothermal approach together with a post-annealing treatment. The three-dimensional NiO nanosheets were further used as electrode materials to fabricate supercapacitors, with high specific capacitance of 943.5, 791.2, 613.5, 480, and 457.5 F g-1 at current densities of 5, 10, 15, 20, and 25 A g-1, respectively. The NiO nanosheets combined well with the substrate. When the electrode material was bended, it can still retain 91.1% of the initial capacitance after 1,200 charging/discharging cycles. Compared with Co3O4 and NiO nanostructures, the specific capacitance of NiO nanosheets is much better. These characteristics suggest that NiO nanosheet electrodes are promising for energy storage application with high power demands. PMID:25276099

Fast capacitive probe for electromagnetic pulse diagnostic.

PubMed

Lorusso, A; Nassisi, V; Siciliano, M V

2008-06-01

In this work, we report the study and the development of a capacitive probe which is suitable for getting fast and high voltage/current measurements. Due to the fact that fast pulses propagate generally in coaxial structures, the probe realized in this work was a capacitive divider with the divider electrode properly designed to assure the same characteristic impedance of the coaxial structure and the recombination time of the split signals during the propagation. It was a folded cylindrical ring of 1.4 cm long and 0.8 cm thick, which introduce a theoretical delay time of about 100 ps. Analyzing the behavior of the probe closed on 520 Omega, the voltage amplification resulted to be of (3.6+/-0.1) x 10(-4) and, as a consequence, the current attenuation factor of 56+/-1 AV. The response rise time was less than 320 ps, which was limited by oscilloscope bandwave. The capacitor probe can operate voltage measurements of the order of 100 kV.

A High Temperature Capacitive Pressure Sensor Based on Alumina Ceramic for in Situ Measurement at 600 °C

PubMed Central

Tan, Qiulin; Li, Chen; Xiong, Jijun; Jia, Pinggang; Zhang, Wendong; Liu, Jun; Xue, Chenyang; Hong, Yingping; Ren, Zhong; Luo, Tao

2014-01-01

In response to the growing demand for in situ measurement of pressure in high-temperature environments, a high temperature capacitive pressure sensor is presented in this paper. A high-temperature ceramic material-alumina is used for the fabrication of the sensor, and the prototype sensor consists of an inductance, a variable capacitance, and a sealed cavity integrated in the alumina ceramic substrate using a thick-film integrated technology. The experimental results show that the proposed sensor has stability at 850 °C for more than 20 min. The characterization in high-temperature and pressure environments successfully demonstrated sensing capabilities for pressure from 1 to 5 bar up to 600 °C, limited by the sensor test setup. At 600 °C, the sensor achieves a linear characteristic response, and the repeatability error, hysteresis error and zero-point drift of the sensor are 8.3%, 5.05% and 1%, respectively. PMID:24487624

LaAlO{sub 3}/Si capacitors: Comparison of different molecular beam deposition conditions and their impact on electrical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pelloquin, Sylvain; Baboux, Nicolas; Albertini, David

2013-01-21

A study of the structural and electrical properties of amorphous LaAlO{sub 3} (LAO)/Si thin films fabricated by molecular beam deposition (MBD) is presented. Two substrate preparation procedures have been explored namely a high temperature substrate preparation technique-leading to a step and terraces surface morphology-and a chemical HF-based surface cleaning. The LAO deposition conditions were improved by introducing atomic plasma-prepared oxygen instead of classical molecular O{sub 2} in the chamber. An Au/Ni stack was used as the top electrode for its electrical characteristics. The physico-chemical properties (surface topography, thickness homogeneity, LAO/Si interface quality) and electrical performance (capacitance and current versus voltagemore » and TunA current topography) of the samples were systematically evaluated. Deposition conditions (substrate temperature of 550 Degree-Sign C, oxygen partial pressure settled at 10{sup -6} Torr, and 550 W of power applied to the O{sub 2} plasma) and post-depositions treatments were investigated to optimize the dielectric constant ({kappa}) and leakage currents density (J{sub Gate} at Double-Vertical-Line V{sub Gate} Double-Vertical-Line = Double-Vertical-Line V{sub FB}- 1 Double-Vertical-Line ). In the best reproducible conditions, we obtained a LAO/Si layer with a dielectric constant of 16, an equivalent oxide thickness of 8.7 A, and J{sub Gate} Almost-Equal-To 10{sup -2}A/cm{sup 2}. This confirms the importance of LaAlO{sub 3} as an alternative high-{kappa} for ITRS sub-22 nm technology node.« less

Association between Refractive Errors and Ocular Biometry in Iranian Adults

PubMed Central

Hashemi, Hassan; Khabazkhoob, Mehdi; Emamian, Mohammad Hassan; Shariati, Mohammad; Miraftab, Mohammad; Yekta, Abbasali; Ostadimoghaddam, Hadi; Fotouhi, Akbar

2015-01-01

Purpose: To investigate the association between ocular biometrics such as axial length (AL), anterior chamber depth (ACD), lens thickness (LT), vitreous chamber depth (VCD) and corneal power (CP) with different refractive errors. Methods: In a cross-sectional study on the 40 to 64-year-old population of Shahroud, random cluster sampling was performed. Ocular biometrics were measured using the Allegro Biograph (WaveLight AG, Erlangen, Germany) for all participants. Refractive errors were determined using cycloplegic refraction. Results: In the first model, the strongest correlations were found between spherical equivalent with axial length and corneal power. Spherical equivalent was strongly correlated with axial length in high myopic and high hyperopic cases, and with corneal power in high hyperopic cases; 69.5% of variability in spherical equivalent was attributed to changes in these variables. In the second model, the correlations between vitreous chamber depth and corneal power with spherical equivalent were stronger in myopes than hyperopes, while the correlations between lens thickness and anterior chamber depth with spherical equivalent were stronger in hyperopic cases than myopic ones. In the third model, anterior chamber depth + lens thickness correlated with spherical equivalent only in moderate and severe cases of hyperopia, and this index was not correlated with spherical equivalent in moderate to severe myopia. Conclusion: In individuals aged 40-64 years, corneal power and axial length make the greatest contribution to spherical equivalent in high hyperopia and high myopia. Anterior segment biometric components have a more important role in hyperopia than myopia. PMID:26730304

Skeletal dosimetry for external exposure to photons based on µCT images of spongiosa from different bone sites

NASA Astrophysics Data System (ADS)

Kramer, R.; Khoury, H. J.; Vieira, J. W.; Kawrakow, I.

2007-11-01

Micro computed tomography (µCT) images of human spongiosa have recently been used for skeletal dosimetry with respect to external exposure to photon radiation. In this previous investigation, the calculation of equivalent dose to the red bone marrow (RBM) and to the bone surface cells (BSC) was based on five different clusters of micro matrices derived from µCT images of vertebrae, and the BSC equivalent dose for 10 µm thickness of the BSC layer was determined using an extrapolation method. The purpose of this study is to extend the earlier investigation by using µCT images from eight different bone sites and by introducing an algorithm for the direct calculation of the BSC equivalent dose with sub-micro voxel resolution. The results show that for given trabecular bone volume fractions (TBVFs) the whole-body RBM equivalent dose does not depend on bone site-specific properties or imaging parameters. However, this study demonstrates that apart from the TBVF and the BSC layer thickness, the BSC equivalent dose additionally depends on a so-called trabecular bone structure (TBS) effect, i.e. that the contribution of photo-electrons released in trabecular bone to the BSC equivalent dose also depends on the bone site-specific structure of the trabeculae. For a given bone site, the TBS effect is also a function of the thickness of the BSC layer, and it could be shown that this effect would disappear almost completely, should the BSC layer thickness be raised from 10 to 50 µm, according to new radiobiological findings.

Equivalent-Continuum Modeling With Application to Carbon Nanotubes

NASA Technical Reports Server (NTRS)

Odegard, Gregory M.; Gates, Thomas S.; Nicholson, Lee M.; Wise, Kristopher E.

2002-01-01

A method has been proposed for developing structure-property relationships of nano-structured materials. This method serves as a link between computational chemistry and solid mechanics by substituting discrete molecular structures with equivalent-continuum models. It has been shown that this substitution may be accomplished by equating the vibrational potential energy of a nano-structured material with the strain energy of representative truss and continuum models. As important examples with direct application to the development and characterization of single-walled carbon nanotubes and the design of nanotube-based devices, the modeling technique has been applied to determine the effective-continuum geometry and bending rigidity of a graphene sheet. A representative volume element of the chemical structure of graphene has been substituted with equivalent-truss and equivalent continuum models. As a result, an effective thickness of the continuum model has been determined. This effective thickness has been shown to be significantly larger than the interatomic spacing of graphite. The effective thickness has been shown to be significantly larger than the inter-planar spacing of graphite. The effective bending rigidity of the equivalent-continuum model of a graphene sheet was determined by equating the vibrational potential energy of the molecular model of a graphene sheet subjected to cylindrical bending with the strain energy of an equivalent continuum plate subjected to cylindrical bending.

A physicochemical mechanism of chemical gas sensors using an AC analysis.

PubMed

Moon, Jaehyun; Park, Jin-Ah; Lee, Su-Jae; Lee, Jeong-Ik; Zyung, Taehyong; Shin, Eui-Chol; Lee, Jong-Sook

2013-06-21

Electrical modeling of the chemical gas sensors was successfully applied to TiO2 nanofiber gas sensors by developing an equivalent circuit model where the junction capacitance as well as the resistance can be separated from the comparable stray capacitance. The Schottky junction impedance exhibited a characteristic skewed arc described by a Cole-Davidson function, and the variation of the fit and derived parameters with temperature, bias, and NO2 gas concentration indicated definitely a physicochemical sensing mechanism based on the Pt|TiO2 Schottky junctions against the conventional supposition of the enhanced sensitivity in nanostructured gas sensors with high grain boundary/surface area. Analysis on a model Pt|TiO2|Pt structure also confirmed the characteristic impedance response of TiO2 nanofiber sensors.

An all-silicon single-wafer micro-g accelerometer with a combined surface and bulk micromachining process

NASA Technical Reports Server (NTRS)

Yazdi, N.; Najafi, K.

2000-01-01

This paper reports an all-silicon fully symmetrical z-axis micro-g accelerometer that is fabricated on a single-silicon wafer using a combined surface and bulk fabrication process. The microaccelerometer has high device sensitivity, low noise, and low/controllable damping that are the key factors for attaining micro g and sub-micro g resolution in capacitive accelerometers. The microfabrication process produces a large proof mass by using the whole wafer thickness and a large sense capacitance by utilizing a thin sacrificial layer. The sense/feedback electrodes are formed by a deposited 2-3 microns polysilicon film with embedded 25-35 microns-thick vertical stiffeners. These electrodes, while thin, are made very stiff by the thick embedded stiffeners so that force rebalancing of the proof mass becomes possible. The polysilicon electrodes are patterned to create damping holes. The microaccelerometers are batch-fabricated, packaged, and tested successfully. A device with a 2-mm x 1-mm proof mass and a full bridge support has a measured sensitivity of 2 pF/g. The measured sensitivity of a 4-mm x 1-mm accelerometer with a cantilever support is 19.4 pF/g. The calculated noise floor of these devices at atmosphere are 0.23 micro g/sqrt(Hz) and 0.16 micro g/sqrt(Hz), respectively.

Performance of Electric Double-Layer Capacitor Simulators

NASA Astrophysics Data System (ADS)

Funabiki, Shigeyuki; Kodama, Shinsuke; Yamamoto, Masayoshi

This paper proposes a simulator of EDLC, which realizes the performance equivalent to electric double-layer capacitors (EDLCs). The proposed simulator consists of an electrolytic capacitor and a two-quadrant chopper working as a current source. Its operation principle is described in the first place. The voltage dependence of capacitance of EDLCs is taken into account. The performance of the proposed EDLC simulator is verified by computer simulations.

Radiation phantom with humanoid shape and adjustable thickness

DOEpatents

Lehmann, Joerg [Pleasanton, CA; Levy, Joshua [Salem, NY; Stern, Robin L [Lodi, CA; Siantar, Christine Hartmann [Livermore, CA; Goldberg, Zelanna [Carmichael, CA

2006-12-19

A radiation phantom comprising a body with a general humanoid shape and at least a portion having an adjustable thickness. In one embodiment, the portion with an adjustable thickness comprises at least one tissue-equivalent slice.

Pseudocapacitance and excellent cyclability of 2,5-dimethoxy-1,4-benzoquinone on graphene

DOE PAGES

Boota, Muhammad; Chen, Chi; Bécuwe, Matthieu; ...

2016-04-27

Electrochemically active organic materials are emerging as low cost, naturally abundant and sustainable alternatives to their metal-based counterparts. However, their usage in energy storage systems is mainly hindered by their poor conductivity, which results in capacitance fade upon cycling. In this paper, we present a redox-active xerogel composed of 2,5-dimethoxy-1,4-benzoquinone (DMQ) decorated on reduced graphene oxide (rGO) sheets via a hydrothermal method as a high capacitance and long cycle life pseudocapacitive electrode. DMQ not only provided stable redox-active centers but also served as a spacer to avoid rGO sheets aggregation and led to a three-dimensional (3D) hierarchical electrode architecture. Whenmore » a binder-free 50 μm thick rolled film was tested as a pseudocapacitive electrode, it exhibited an excellent capacitance of 650 F g -1 at 5 mV s -1 (780 F cm -3) in 1 M sulfuric acid, outperforming a large number of reported organic and inorganic electrodes. Most importantly, optimized electrodes showed an excellent capacitance retention of 99% after 25 000 cycles at 50 mV s -1. Density functional theory (DFT) calculations are further used to understand the charge storage mechanism, the preferred orientation of the adsorbed molecules, charge density distribution and density of states. In conclusion, our combined experimental and theoretical findings demonstrate that the careful selection of the conductive substrate, electrode architecture and organic molecules plays a crucial role in achieving high capacitance and long cycling performance.« less

Influence of emissive layer thickness on electrical characteristics of polyfluorene copolymer based polymer light emitting diodes

NASA Astrophysics Data System (ADS)

Das, D.; Gopikrishna, P.; Singh, A.; Dey, A.; Iyer, P. K.

2016-04-01

Polymer light emitting diodes (PLEDs) with a device configuration of ITO/PEDOT:PSS/PFONPN01 [Poly [2,7-(9,9’-dioctylfluorene)-co-N-phenyl-1,8-naphthalimide (99:01)]/LiF/Al have been fabricated by varying the emissive layer (EML) thickness (40/65/80/130 nm) and the influence of EML thickness on the electrical characteristics of PLED has been studied. PLED can be modelled as a simple combination of resistors and capacitors. The impedance spectroscopy analysis showed that the devices with different EML thickness had different values of parallel resistance (RP) and the parallel capacitance (CP). The impedance of the devices is found to increase with increasing EML thickness resulting in an increase in the driving voltage. The device with an emissive layer thickness of 80nm, spin coated from a solution of concentration 15 mg/mL is found to give the best device performance with a maximum brightness value of 5226 cd/m2.

Organic field effect transistors - Study of performance parameters for different dielectric layer thickness

NASA Astrophysics Data System (ADS)

Assis, Anu; Shahul Hameed T., A.; Predeep, P.

2017-06-01

Mobility and current handling capabilities of Organic Field Effect Transistor (OFET) are vitally important parameters in the electrical performance where the material parameters and thickness of different layers play significant role. In this paper, we report the simulation of an OFET using multi physics tool, where the active layer is pentacene and Poly Methyl Methacrylate (PMMA) forms the dielectric. Electrical characterizations of the OFET on varying the thickness of the dielectric layer from 600nm to 400nm are simulated and drain current, transconductance and mobility are analyzed. In the study it is found that even though capacitance increases with reduction in dielectric layer thickness, the transconductance effect is reflected many more times in the mobility which in turn could be attributed to the variations in transverse electric field. The layer thickness below 300nm may result in gate leakage current points to the requirement of optimizing the thickness of different layers for better performance.

Conductive two-dimensional titanium carbide ‘clay’ with high volumetric capacitance

DOE PAGES

Ghidiu, Michael; Lukatskaya, Maria R.; Zhao, Meng-Qiang; ...

2014-11-26

Safe and powerful energy storage devices are becoming increasingly important. Charging times of seconds to minutes, with power densities exceeding those of batteries, can in principle be provided by electrochemical capacitors—in particular, pseudocapacitors. Recent research has focused mainly on improving the gravimetric performance of the electrodes of such systems, but for portable electronics and vehicles volume is at a premium. The best volumetric capacitances of carbon-based electrodes are around 300 farads per cubic centimetre; hydrated ruthenium oxide can reach capacitances of 1,000 to 1,500 farads per cubic centimetre with great cyclability, but only in thin films. Recently, electrodes made ofmore » two-dimensional titanium carbide (Ti 3C 2, a member of the ‘MXene’ family), produced by etching aluminium from titanium aluminium carbide (Ti 3AlC 2, a ‘MAX’ phase) in concentrated hydrofluoric acid, have been shown to have volumetric capacitances of over 300 farads per cubic centimetre. In this paper, we report a method of producing this material using a solution of lithium fluoride and hydrochloric acid. The resulting hydrophilic material swells in volume when hydrated, and can be shaped like clay and dried into a highly conductive solid or rolled into films tens of micrometres thick. Additive-free films of this titanium carbide ‘clay’ have volumetric capacitances of up to 900 farads per cubic centimetre, with excellent cyclability and rate performances. In addition, this capacitance is almost twice that of our previous report, and our synthetic method also offers a much faster route to film production as well as the avoidance of handling hazardous concentrated hydrofluoric acid.« less

Modeling and Simulation of Capacitance-Voltage Characteristics of a Nitride GaAs Schottky Diode

NASA Astrophysics Data System (ADS)

Ziane, Abderrezzaq; Amrani, Mohammed; Benamara, Zineb; Rabehi, Abdelaziz

2018-06-01

A nitride GaAs Schottky diode has been fabricated by the nitridation of GaAs substrates using a radio frequency discharge nitrogen plasma source with a layer thickness of approximately 0.7 nm of GaN. The capacitance-voltage (C-V) characteristics of the Au/GaN/GaAs structure were investigated at room temperature for different frequencies, ranging from 1 kHz to 1 MHz. The C-V measurements for the Au/GaN/GaAs Schottky diode were found to be strongly dependent on the bias voltage and the frequency. The capacitance curves depict an anomalous peak and a negative capacitance phenomenon, indicating the presence of continuous interface state density behavior. A numerical drift-diffusion model based on the Scharfetter-Gummel algorithm was elaborated to solve a system composed of the Poisson and continuities equations. In this model, we take into account the continuous interface state density, and we have considered exponential and Gaussian distributions of trap states in the band gap. The effects of the GaAs doping concentration and the trap state density are discussed. We deduce the shape and values of the trap states, then we validate the developed model by fitting the computed C-V curves with experimental measurements at low frequency.

Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Smith, K. V.; Yu, E. T.; Elsass, C. R.; Heying, B.; Speck, J. S.

2001-10-01

Local electronic properties in a molecular-beam-epitaxy-grown AlxGa1-xN/GaN heterostructure field-effect transistor epitaxial layer structure are probed using depth-resolved scanning capacitance microscopy. Theoretical analysis of contrast observed in scanning capacitance images acquired over a range of bias voltages is used to assess the possible structural origins of local inhomogeneities in electronic structure, which are shown to be concentrated in areas where Ga droplets had formed on the surface during growth. Within these regions, there are significant variations in the local electronic structure that are attributed to variations in both AlxGa1-xN layer thickness and Al composition. Increased charge trapping is also observed in these regions.

Expression of proliferative and inflammatory markers in a full-thickness human skin equivalent following exposure to the model sulfur mustard vesicant, 2-chloroethyl ethyl sulfide

PubMed Central

Black, Adrienne T.; Hayden, Patrick J.; Casillas, Robert P.; Heck, Diane E.; Gerecke, Donald R.; Sinko, Patrick J.; Laskin, Debra L.; Laskin, Jeffrey D.

2010-01-01

Sulfur mustard is a potent vesicant that induces inflammation, edema and blistering following dermal exposure. To assess molecular mechanisms mediating these responses, we analyzed the effects of the model sulfur mustard vesicant, 2-chloroethyl ethyl sulfide, on EpiDerm-FT™, a commercially available full-thickness human skin equivalent. CEES (100–1000 μM) caused a concentration-dependent increase in pyknotic nuclei and vacuolization in basal keratinocytes; at high concentrations (300–1000 μM), CEES also disrupted keratin filament architecture in the stratum corneum. This was associated with time-dependent increases in expression of proliferating cell nuclear antigen, a marker of cell proliferation, and poly(ADP-ribose) polymerase (PARP) and phosphorylated histone H2AX, markers of DNA damage. Concentration- and time-dependent increases in mRNA and protein expression of eicosanoid biosynthetic enzymes including COX-2, 5-lipoxygenase, microsomal PGE2 synthases, leukotriene (LT) A4 hydrolase and LTC4 synthase were observed in CEES-treated skin equivalents, as well as in antioxidant enzymes, glutathione S-transferases A1–2 (GSTA1–2), GSTA3 and GSTA4. These data demonstrate that CEES induces rapid cellular damage, cytotoxicity and inflammation in full-thickness skin equivalents. These effects are similar to human responses to vesicants in vivo and suggest that the full thickness skin equivalent is a useful in vitro model to characterize the biological effects of mustards and to develop potential therapeutics. PMID:20840853

Expression of proliferative and inflammatory markers in a full-thickness human skin equivalent following exposure to the model sulfur mustard vesicant, 2-chloroethyl ethyl sulfide.

PubMed

Black, Adrienne T; Hayden, Patrick J; Casillas, Robert P; Heck, Diane E; Gerecke, Donald R; Sinko, Patrick J; Laskin, Debra L; Laskin, Jeffrey D

2010-12-01

Sulfur mustard is a potent vesicant that induces inflammation, edema and blistering following dermal exposure. To assess molecular mechanisms mediating these responses, we analyzed the effects of the model sulfur mustard vesicant, 2-chloroethyl ethyl sulfide, on EpiDerm-FT™, a commercially available full-thickness human skin equivalent. CEES (100-1000 μM) caused a concentration-dependent increase in pyknotic nuclei and vacuolization in basal keratinocytes; at high concentrations (300-1000 μM), CEES also disrupted keratin filament architecture in the stratum corneum. This was associated with time-dependent increases in expression of proliferating cell nuclear antigen, a marker of cell proliferation, and poly(ADP-ribose) polymerase (PARP) and phosphorylated histone H2AX, markers of DNA damage. Concentration- and time-dependent increases in mRNA and protein expression of eicosanoid biosynthetic enzymes including COX-2, 5-lipoxygenase, microsomal PGE₂ synthases, leukotriene (LT) A₄ hydrolase and LTC₄ synthase were observed in CEES-treated skin equivalents, as well as in antioxidant enzymes, glutathione S-transferases A1-2 (GSTA1-2), GSTA3 and GSTA4. These data demonstrate that CEES induces rapid cellular damage, cytotoxicity and inflammation in full-thickness skin equivalents. These effects are similar to human responses to vesicants in vivo and suggest that the full thickness skin equivalent is a useful in vitro model to characterize the biological effects of mustards and to develop potential therapeutics. Copyright © 2010 Elsevier Inc. All rights reserved.

The corrosion mechanisms for primer coated 2219-T87 aluminum

NASA Technical Reports Server (NTRS)

Danford, Merlin D.; Knockemus, Ward W.

1987-01-01

To investigate metal surface corrosion and the breakdown of metal protective coatings, the ac Impedance Method was applied to zinc chromate primer coated 2219-T87 aluminum. The EG&GPARC Model 368 ac Impedance Measurement System, along with dc measurements with the same system using the Polarization Resistance Method, was used to monitor changing properties of coated aluminum disks immersed in 3.5 percent NaCl solutions buffered at pH 5.5 and pH 8.2 over periods of 40 days each. The corrosion system can be represented by an electronic analog called an equivalent circuit consisting of resistors and capacitors in specific arrangements. This equivalent circuit parallels the impedance behavior of the corrosion system during a frequency scan. Values for resistances and capacitances, that can be assigned in the equivalent circuit following a least squares analysis of the data, describe changes occurring on the corroding metal surface and in the protective coatings. A suitable equivalent circuit has been determined which predicts the correct Bode phase and magnitude for the experimental sample. The dc corrosion current density data are related to equivalent circuit element parameters.

Thick film wireless and powerless strain sensor

NASA Astrophysics Data System (ADS)

Jia, Yi; Sun, Ke

2006-03-01

The development of an innovative wireless strain sensing technology has a great potential to extend its applications in manufacturing, civil engineering and aerospace industry. This paper presents a novel wireless and powerless strain sensor with a multi-layer thick film structure. The sensor employs a planar inductor (L) and capacitive transducer (C) resonant tank sensing circuit, and a strain sensitive material of a polarized polyvinylidene fluoride (PVDF) piezoelectric thick film to realize the wireless strain sensing by strain to frequency conversion and to receive radio frequency electromagnetic energy for powering the sensor. The prototype sensor was designed and fabricated. The results of calibration on a strain constant cantilever beam show a great linearity and sensitivity about 0.0013 in a strain range of 0-0.018.

Design automation for complex CMOS/SOS LSI hybrid substrates

NASA Technical Reports Server (NTRS)

Ramondetta, P. W.; Smiley, J. W.

1976-01-01

A design automated approach used to develop thick-film hybrid packages is described. The hybrid packages produced combine thick-film and silicon on sapphire (SOS) laser surface interaction technologies to bring the on-chip performance level of SOS to the subsystem level. Packing densities are improved by a factor of eight over ceramic dual in-line packing; interchip wiring capacitance is low. Due to significant time savings, the design automated approach presented can be expected to yield a 3:1 reduction in cost over the use of manual methods for the initial design of a hybrid.

Method to control residual stress in a film structure and a system thereof

DOEpatents

Parthum, Sr., Michael J.

2008-12-30

A method for controlling residual stress in a structure in a MEMS device and a structure thereof includes selecting a total thickness and an overall equivalent stress for the structure. A thickness for each of at least one set of alternating first and second layers is determined to control an internal stress with respect to a neutral axis for each of the at least alternating first and second layers and to form the structure based on the selected total thickness and the selected overall equivalent stress. Each of the at least alternating first and second layers is deposited to the determined thickness for each of the at least alternating first and second layers to form the structure.

Heavy ion contributions to organ dose equivalent for the 1977 galactic cosmic ray spectrum

NASA Astrophysics Data System (ADS)

Walker, Steven A.; Townsend, Lawrence W.; Norbury, John W.

2013-05-01

Estimates of organ dose equivalents for the skin, eye lens, blood forming organs, central nervous system, and heart of female astronauts from exposures to the 1977 solar minimum galactic cosmic radiation spectrum for various shielding geometries involving simple spheres and locations within the Space Transportation System (space shuttle) and the International Space Station (ISS) are made using the HZETRN 2010 space radiation transport code. The dose equivalent contributions are broken down by charge groups in order to better understand the sources of the exposures to these organs. For thin shields, contributions from ions heavier than alpha particles comprise at least half of the organ dose equivalent. For thick shields, such as the ISS locations, heavy ions contribute less than 30% and in some cases less than 10% of the organ dose equivalent. Secondary neutron production contributions in thick shields also tend to be as large, or larger, than the heavy ion contributions to the organ dose equivalents.

Shot-noise in resistive-diode mixers and the attenuator noise model

NASA Technical Reports Server (NTRS)

Kerr, A. R.

1979-01-01

The representation of a pumped exponential diode, operating as a mixer, by an equivalent lossy network, is reexamined. It is shown that the model is correct provided the network has ports for all sideband frequencies at which (real) power flow can occur between the diode and its embedding. The temperature of the equivalent network is eta/2 times the physical temperature of the diode. The model is valid only if the series resistance and nonlinear capacitance of the diode are negligible. Expressions are derived for the input and output noise temperature and the noise-temperature ratio of ideal mixers. Some common beliefs concerning noise-figure and noise-temperature ratio are shown to be incorrect.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chinthavali, Madhu Sudhan; Campbell, Steven L

This paper presents an analytical model for wireless power transfer system used in electric vehicle application. The equivalent circuit model for each major component of the system is described, including the input voltage source, resonant network, transformer, nonlinear diode rectifier load, etc. Based on the circuit model, the primary side compensation capacitance, equivalent input impedance, active / reactive power are calculated, which provides a guideline for parameter selection. Moreover, the voltage gain curve from dc output to dc input is derived as well. A hardware prototype with series-parallel resonant stage is built to verify the developed model. The experimental resultsmore » from the hardware are compared with the model predicted results to show the validity of the model.« less

Impedance dispersion analysis of drug-membrane interactions

NASA Astrophysics Data System (ADS)

Tacheva, Bilyana; Paarvanova, Boyana; Ivanov, Ivan T.; Karabaliev, Miroslav

2017-11-01

Thin lipid films modified glassy carbon electrodes (GCE) were used in this work as model system for studying the interactions between two antipsychotic phenothiazine drugs, chlorpromazine and thioridazine, and the lipid fraction of the biomembranes. The lipid films on the electrode surface were obtained through the thinning of film-forming lipid solution deposited between an electrolyte phase and the working GC electrode. The effects of the drugs on the lipid film structure were investigated by electrochemical impedance spectroscopy (EIS). To characterize the electric properties of the lipid film the impedance of the working GCE is modeled with an equivalent circuit consisting of parallel capacitance Cp and resistance Rp. These capacitance and resistance are not frequency independent but could be calculated as equivalent Cp and Rp for each measured frequency of the impedance spectrum and presented as functions of the frequency f, Cp = Cp(f) and Rp= Rp(f). For the lipid films used in this work, it is demonstrated that both Cp(f) and Rp(f) are well approximated with power-law functions. This behavior implies that the impedance Z of the films could be analysed in terms of the well-known constant-phase angle element (CPE), which is often used to describe the interfacial impedance of solid working electrodes.

A Theoretical and Experimental Comparison of 3-3 and 3-1 Mode Piezoelectric Microelectromechanical Systems (MEMS)

PubMed Central

Kim, Donghwan; Hewa-Kasakarage, Nishshanka; Hall, Neal A.

2014-01-01

Two piezoelectric transducer modes applied in microelectromechanical systems are (i) the 3-1 mode with parallel electrodes perpendicular to a vertical polarization vector, and (ii) the 3-3 mode which uses interdigitated (IDT) electrodes to realize an in-plane polarization vector. This study compares the two configurations by deriving a Norton equivalent representation of each approach – including expressions for output charge and device capacitance. The model is verified using a microfabricated device comprised of multiple epitaxial silicon beams with sol-gel deposited lead zirconate titanate at the surface. The beams have identical dimensions and are attached to a common moving element at their tip. The only difference between beams is electrode configuration – enabling a direct comparison. Capacitance and charge measurements verify the presented theory with high accuracy. The Norton equivalent representation is general and enables comparison of any figure of merit, including electromechanical coupling coefficient and signal to noise ratio. With respect to coupling coefficient, the experimentally validated theory in this work suggests that 3-3 mode IDT-electrode configurations offer the potential for modest improvements compared against 3-1 mode devices (less than 2×), and the only geometrical parameter affecting this ratio is the fill factor of the IDT electrode. PMID:25309041

High-Performance Supercapacitor Electrode Based on Cobalt Oxide-Manganese Dioxide-Nickel Oxide Ternary 1D Hybrid Nanotubes.

PubMed

Singh, Ashutosh K; Sarkar, Debasish; Karmakar, Keshab; Mandal, Kalyan; Khan, Gobinda Gopal

2016-08-17

We report a facile method to design Co3O4-MnO2-NiO ternary hybrid 1D nanotube arrays for their application as active material for high-performance supercapacitor electrodes. This as-prepared novel supercapacitor electrode can store charge as high as ∼2020 C/g (equivalent specific capacitance ∼2525 F/g) for a potential window of 0.8 V and has long cycle stability (nearly 80% specific capacitance retains after successive 5700 charge/discharge cycles), significantly high Coulombic efficiency, and fast response time (∼0.17s). The remarkable electrochemical performance of this unique electrode material is the outcome of its enormous reaction platform provided by its special nanostructure morphology and conglomeration of the electrochemical properties of three highly redox active materials in a single unit.

Method and Apparatus for Precisely Applying Large Planar Equi-Biaxial Strains to a Circular Membrane

DTIC Science & Technology

2013-04-01

potential future Army applications. Electronic properties, such as dielectric strength , capacitance, resistance, and inductance, vary significantly and... dielectric strength and resistance are primarily determined by inherent bulk material properties, including microstructure, while shifts in inductance...less and a nominal thickness up to ~1 mm. 15. SUBJECT TERMS large planar equi-biaxial strain, membrane, dielectric elastomers, electromechanical

Monolayer Nickel Cobalt Hydroxyl Carbonate for High Performance All-Solid-State Asymmetric Supercapacitors.

PubMed

Zhao, Yufeng; Ma, Hongnan; Huang, Shifei; Zhang, Xuejiao; Xia, Meirong; Tang, Yongfu; Ma, Zi-Feng

2016-09-07

The emergence of atomically thick nanolayer materials, which feature a short ion diffusion channel and provide more exposed atoms in the electrochemical reactions, offers a promising occasion to optimize the performance of supercapacitors on the atomic level. In this work, a novel monolayer Ni-Co hydroxyl carbonate with an average thickness of 1.07 nm is synthesized via an ordinary one-pot hydrothermal route for the first time. This unique monolayer structure can efficiently rise up the exposed electroactive sites and facilitate the surface dependent electrochemical reaction processes, and thus results in outstanding specific capacitance of 2266 F g(-1). Based on this material, an all-solid-state asymmetric supercapacitor is developed adopting alkaline PVA (poly(vinyl alcohol)) gel (PVA/KOH) as electrolyte, which performs remarkable cycling stability (no capacitance fade after 19 000 cycles) together with promising energy density of 50 Wh kg(-1) (202 μWh cm(-2)) and high power density of 8.69 kW kg(-1) (35.1 mW cm(-2)). This as-assembled all-solid-state asymmetric supercapacitor (AASC) holds great potential in the field of portable energy storage devices.

Direct laser writing of micro-supercapacitors on thick graphite oxide films and their electrochemical properties in different liquid inorganic electrolytes.

PubMed

Kumar, Rajesh; Joanni, Ednan; Singh, Rajesh K; da Silva, Everson T S G; Savu, Raluca; Kubota, Lauro T; Moshkalev, Stanislav A

2017-12-01

In this article we demonstrate a simple approach to fabricate interdigitated in-plane electrodes for flexible micro-supercapacitors (MSCs). A nanosecond ultraviolet laser treatment is used to reduce and pattern the electrodes on thick graphite oxide (GO) freestanding films. These laser-treated regions obtained by direct writing provide the conducting channels for electrons in the capacitors. The electrochemical performance of the MSCs was evaluated in the presence of two different electrolytes and they exhibit characteristics of nearly electrical double layer capacitors. The MSCs have areal capacitances as 2.40, 2.23 and 1.62μF/cm 2 for NaOH, Na 2 SO 4 and KCl electrolytes respectively, for measurements performed at the scan rate of 50mV/s. They retain ∼93.1% of their initial capacitances after 3500 cycles (scan rate=80mV/s) in NaOH electrolyte. The proposed laser treatment approach enables facile and fast fabrication of flexible MSCs without the need for tedious processing methods such as photolithographic micro-patterning and deposition of porous carbon or metallic current collectors. Copyright © 2017 Elsevier Inc. All rights reserved.

Meta-metallic coils and resonators: Methods for high Q-value resonant geometries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mett, R. R.; Department of Physics and Chemistry, Milwaukee School of Engineering, Milwaukee, Wisconsin 53202; Sidabras, J. W.

A novel method of decreasing ohmic losses and increasing Q-value in metallic resonators at high frequencies is presented. The method overcomes the skin-depth limitation of rf current flow cross section. The method uses layers of conductive foil of thickness less than a skin depth and capacitive gaps between layers. The capacitive gaps can substantially equalize the rf current flowing in each layer, resulting in a total cross-sectional dimension for rf current flow many times larger than a skin depth. Analytic theory and finite-element simulations indicate that, for a variety of structures, the Q-value enhancement over a single thick conductor approachesmore » the ratio of total conductor thickness to skin depth if the total number of layers is greater than one-third the square of the ratio of total conductor thickness to skin depth. The layer number requirement is due to counter-currents in each foil layer caused by the surrounding rf magnetic fields. We call structures that exhibit this type of Q-enhancement “meta-metallic.” In addition, end effects due to rf magnetic fields wrapping around the ends of the foils can substantially reduce the Q-value for some classes of structures. Foil structures with Q-values that are substantially influenced by such end effects are discussed as are five classes of structures that are not. We focus particularly on 400 MHz, which is the resonant frequency of protons at 9.4 T. Simulations at 400 MHz are shown with comparison to measurements on fabricated structures. The methods and geometries described here are general for magnetic resonance and can be used at frequencies much higher than 400 MHz.« less

Meta-metallic coils and resonators: Methods for high Q-value resonant geometries

PubMed Central

Mett, R. R.; Hyde, J. S.

2016-01-01

A novel method of decreasing ohmic losses and increasing Q-value in metallic resonators at high frequencies is presented. The method overcomes the skin-depth limitation of rf current flow cross section. The method uses layers of conductive foil of thickness less than a skin depth and capacitive gaps between layers. The capacitive gaps can substantially equalize the rf current flowing in each layer, resulting in a total cross-sectional dimension for rf current flow many times larger than a skin depth. Analytic theory and finite-element simulations indicate that, for a variety of structures, the Q-value enhancement over a single thick conductor approaches the ratio of total conductor thickness to skin depth if the total number of layers is greater than one-third the square of the ratio of total conductor thickness to skin depth. The layer number requirement is due to counter-currents in each foil layer caused by the surrounding rf magnetic fields. We call structures that exhibit this type of Q-enhancement “meta-metallic.” In addition, end effects due to rf magnetic fields wrapping around the ends of the foils can substantially reduce the Q-value for some classes of structures. Foil structures with Q-values that are substantially influenced by such end effects are discussed as are five classes of structures that are not. We focus particularly on 400 MHz, which is the resonant frequency of protons at 9.4 T. Simulations at 400 MHz are shown with comparison to measurements on fabricated structures. The methods and geometries described here are general for magnetic resonance and can be used at frequencies much higher than 400 MHz. PMID:27587143

Hydrothermal synthesis of nanostructured graphene/polyaniline composites as high-capacitance electrode materials for supercapacitors

PubMed Central

Wang, Ronghua; Han, Meng; Zhao, Qiannan; Ren, Zonglin; Guo, Xiaolong; Xu, Chaohe; Hu, Ning; Lu, Li

2017-01-01

As known to all, hydrothermal synthesis is a powerful technique for preparing inorganic and organic materials or composites with different architectures. In this reports, by controlling hydrothermal conditions, nanostructured polyaniline (PANi) in different morphologies were composited with graphene sheets (GNS) and used as electrode materials of supercapacitors. Specifically, ultrathin PANi layers with total thickness of 10–20 nm are uniformly composited with GNS by a two-step hydrothermal-assistant chemical oxidation polymerization process; while PANi nanofibers with diameter of 50~100 nm are obtained by a one-step direct hydrothermal process. Benefitting from the ultrathin layer and porous structure, the sheet-like GNS/PANi composites can deliver specific capacitances of 532.3 to 304.9 F/g at scan rates of 2 to 50 mV/s. And also, this active material showed very good stability with capacitance retention as high as ~99.6% at scan rate of 50 mV/s, indicating a great potential for using in supercapacitors. Furthermore, the effects of hydrothermal temperatures on the electrochemical performances were systematically studied and discussed. PMID:28291246

In-circuit-measurement of parasitic elements in high gain high bandwidth low noise transimpedance amplifiers.

PubMed

Cochems, P; Kirk, A; Zimmermann, S

2014-12-01

Parasitic elements play an important role in the development of every high performance circuit. In the case of high gain, high bandwidth transimpedance amplifiers, the most important parasitic elements are parasitic capacitances at the input and in the feedback path, which significantly influence the stability, the frequency response, and the noise of the amplifier. As these parasitic capacitances range from a few picofarads down to only a few femtofarads, it is nearly impossible to measure them accurately using traditional LCR meters. Unfortunately, they also cannot be easily determined from the transfer function of the transimpedance amplifier, as it contains several overlapping effects and its measurement is only possible when the circuit is already stable. Therefore, we developed an in-circuit measurement method utilizing minimal modifications to the input stage in order to measure its parasitic capacitances directly and with unconditional stability. Furthermore, using the data acquired with this measurement technique, we both proposed a model for the complicated frequency response of high value thick film resistors as they are used in high gain transimpedance amplifiers and optimized our transimpedance amplifier design.

Hydrothermally Activated Graphene Fiber Fabrics for Textile Electrodes of Supercapacitors.

PubMed

Li, Zheng; Huang, Tieqi; Gao, Weiwei; Xu, Zhen; Chang, Dan; Zhang, Chunxiao; Gao, Chao

2017-11-28

Carbon textiles are promising electrode materials for wearable energy storage devices owing to their conductive, flexible, and lightweight features. However, there still lacks a perfect choice for high-performance carbon textile electrodes with sufficient electrochemical activity. Graphene fiber fabrics (GFFs) are newly discovered carbon textiles, exhibiting various attractive properties, especially a large variability on the microstructure. Here we report the fabrication of hierarchical GFFs with significantly enlarged specific surface area using a hydrothermal activation strategy. By carefully optimize the activation process, the hydrothermally activated graphene fiber fabrics (HAGFFs) could achieve an areal capacitance of 1060 mF cm -2 in a very thin thickness (150 μm) and the capacitance is easily magnified by overlaying several layers of HAGFFs, even up to a record value of 7398 mF cm -2 . Meanwhile, a good rate capability and a long cycle life are also attained. As compared with other carbon textiles, including the commercial carbon fiber cloths, our HAGFFs present much better capacitive performance. Therefore, the mechanically stable, flexible, conductive, and highly active HAGFFs have provided an option for high-performance textile electrodes.

Optimization of the coplanar interdigital capacitive sensor

NASA Astrophysics Data System (ADS)

Huang, Yunzhi; Zhan, Zheng; Bowler, Nicola

2017-02-01

Interdigital capacitive sensors are applied in nondestructive testing and material property characterization of low-conductivity materials. The sensor performance is typically described based on the penetration depth of the electric field into the sample material, the sensor signal strength and its sensitivity. These factors all depend on the geometry and material properties of the sensor and sample. In this paper, a detailed analysis is provided, through finite element simulations, of the ways in which the sensor's geometrical parameters affect its performance. The geometrical parameters include the number of digits forming the interdigital electrodes and the ratio of digit width to their separation. In addition, the influence of the presence or absence of a metal backplane on the sample is analyzed. Further, the effects of sensor substrate thickness and material on signal strength are studied. The results of the analysis show that it is necessary to take into account a trade-off between the desired sensitivity and penetration depth when designing the sensor. Parametric equations are presented to assist the sensor designer or nondestructive evaluation specialist in optimizing the design of a capacitive sensor.

An Electromagnetic/Capacitive Composite Sensor for Testing of Thermal Barrier Coatings

PubMed Central

Ren, Yuan; Pan, Mengchun; Chen, Dixiang; Tian, Wugang

2018-01-01

Thermal barrier coatings (TBCs) can significantly reduce the operating temperature of the aeroengine turbine blade substrate, and their testing technology is very urgently demanded. Due to their complex multi-layer structure, it is hard to evaluate TBCs with a single function sensor. In this paper, an electromagnetic/capacitive composite sensor is proposed for the testing of thermal barrier coatings. The dielectric material is tested with planar capacitor, and the metallic material is tested with electromagnetic coils. Then, the comprehensive test and evaluation of thermal barrier coating system can be realized. The sensor is optimized by means of theoretical and simulation analysis, and the interaction between the planar capacitor and the electromagnetic coil is studied. The experimental system is built based on an impedance analyser and multiplex unit to evaluate the performance of the composite sensor. The transimpedances and capacitances are measured under different coating parameters, such as thickness and permittivity of top coating as well as bond layer conductivity. The experimental results agree with the simulation analysis, and the feasibility of the sensor is proved. PMID:29783746

Effect of atomic-arrangement matching on La{sub 2}O{sub 3}/Ge heterostructures for epitaxial high-k-gate-stacks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kanashima, T., E-mail: kanashima@ee.es.osaka-u.ac.jp; Zenitaka, M.; Kajihara, Y.

2015-12-14

We demonstrate a high-quality La{sub 2}O{sub 3} layer on germanium (Ge) as an epitaxial high-k-gate-insulator, where there is an atomic-arrangement matching condition between La{sub 2}O{sub 3}(001) and Ge(111). Structural analyses reveal that (001)-oriented La{sub 2}O{sub 3} layers were grown epitaxially only when we used Ge(111) despite low growth temperatures less than 300 °C. The permittivity (k) of the La{sub 2}O{sub 3} layer is roughly estimated to be ∼19 from capacitance-voltage (C-V) analyses in Au/La{sub 2}O{sub 3}/Ge structures after post-metallization-annealing treatments, although the C-V curve indicates the presence of carrier traps near the interface. By using X-ray photoelectron spectroscopy analyses, we findmore » that only Ge–O–La bonds are formed at the interface, and the thickness of the equivalent interfacial Ge oxide layer is much smaller than that of GeO{sub 2} monolayer. We discuss a model of the interfacial structure between La{sub 2}O{sub 3} and Ge(111) and comment on the C-V characteristics.« less

UV sensing using film bulk acoustic resonators based on Au/n-ZnO/piezoelectric-ZnO/Al structure

PubMed Central

Bian, Xiaolei; Jin, Hao; Wang, Xiaozhi; Dong, Shurong; Chen, Guohao; Luo, J. K.; Deen, M. Jamal; Qi, Bensheng

2015-01-01

A new type of ultraviolet (UV) light sensor based on film bulk acoustic wave resonator (FBAR) is proposed. The new sensor uses gold and a thin n-type ZnO layer deposited on the top of piezoelectric layer of FBAR to form a Schottky barrier. The Schottky barrier's capacitance can be changed with UV light, resulting in an enhanced shift in the entire FBAR's resonant frequency. The fabricated UV sensor has a 50 nm thick n-ZnO semiconductor layer with a carrier concentration of ~ 1017 cm−3. A large frequency downshift is observed when UV light irradiates the FBAR. With 365 nm UV light of intensity 1.7 mW/cm2, the FBAR with n-ZnO/Au Schottky diode has 250 kHz frequency downshift, much larger than the 60 kHz frequency downshift in a conventional FBAR without the n-ZnO layer. The shift in the new FBAR's resonant frequency is due to the junction formed between Au and n-ZnO semiconductor and its properties changes with UV light. The experimental results are in agreement with the theoretical analysis using an equivalent circuit model of the new FBAR structure. PMID:25773146

Assessment of azadirachtin-A, a neem tetranortritarpinoid, on rat spermatozoa during in vitro capacitation.

PubMed

Katte, Teesta V; Rajyalakshmi, Malempati; Aladakatti, Ravindranath H

2018-05-05

The exploration of the biological assessment of technical azadirachtin, a tetranortritarpinoid from the neem seed kernel, was reviewed. The present study was, therefore, designed to evaluate the dose-dependent in vitro effects of azadirachtin-A, particularly on the functional studies and determination of molecular events, which are critical in the process of sperm capacitation. To assess the effects of the azadirachtin-A on the functional studies, sperm capacitation, the total sperm adenosine triphosphate levels, acrosome reaction (AR), the sperm-egg interaction and the determination of molecular events like cyclic adenosine-3',5'-monophosphate and calcium levels, the appropriate volumes of the sperm suspension were added to the medium to a final concentration of 1×106 sperm/mL and incubated in a humidified atmosphere of 5% CO2 in air at 37°C. The increasing quantities 0.5-2.0 mM/mL and the equivalent volumes of 50% dimethyl sulfoxide were added to the control dishes prior to the addition of spermatozoa and then observed at various time-points for motility and other analyses. Results revealed the dose- and time-dependent decrease in the functional consequence of capacitation, i.e. the percentage of motile spermatozoa, motility score and sperm motility index, levels of molecular events in spermatozoa, followed by declined spontaneous AR leading to lesser binding of the cauda epididymal sperm to the Zona pellucida. The findings confirm the inhibition of rat sperm motility by blocking some biochemical pathways like energy utilization. They also demonstrate that sperm capacitation is associated with the decrease in AR and that the levels of molecular events in spermatozoa can guide us towards the development of a new male contraceptive constituent.

Transtendon, Double-Row, Transosseous-Equivalent Arthroscopic Repair of Partial-Thickness, Articular-Surface Rotator Cuff Tears

PubMed Central

Dilisio, Matthew F.; Miller, Lindsay R.; Higgins, Laurence D.

2014-01-01

Arthroscopic transtendinous techniques for the arthroscopic repair of partial-thickness, articular-surface rotator cuff tears offer the advantage of minimizing the disruption of the patient's remaining rotator cuff tendon fibers. In addition, double-row fixation of full-thickness rotator cuff tears has shown biomechanical advantages. We present a novel method combining these 2 techniques for transtendon, double-row, transosseous-equivalent arthroscopic repair of partial-thickness, articular-surface rotator cuff tears. Direct visualization of the reduction of the retracted articular tendon layer to its insertion on the greater tuberosity is the key to the procedure. Linking the medial-row anchors and using a double-row construct provide a stable repair that allows early shoulder motion to minimize the risk of postoperative stiffness. PMID:25473606

Transtendon, double-row, transosseous-equivalent arthroscopic repair of partial-thickness, articular-surface rotator cuff tears.

PubMed

Dilisio, Matthew F; Miller, Lindsay R; Higgins, Laurence D

2014-10-01

Arthroscopic transtendinous techniques for the arthroscopic repair of partial-thickness, articular-surface rotator cuff tears offer the advantage of minimizing the disruption of the patient's remaining rotator cuff tendon fibers. In addition, double-row fixation of full-thickness rotator cuff tears has shown biomechanical advantages. We present a novel method combining these 2 techniques for transtendon, double-row, transosseous-equivalent arthroscopic repair of partial-thickness, articular-surface rotator cuff tears. Direct visualization of the reduction of the retracted articular tendon layer to its insertion on the greater tuberosity is the key to the procedure. Linking the medial-row anchors and using a double-row construct provide a stable repair that allows early shoulder motion to minimize the risk of postoperative stiffness.

Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode

NASA Astrophysics Data System (ADS)

Spiga, S.; Rao, R.; Lamagna, L.; Wiemer, C.; Congedo, G.; Lamperti, A.; Molle, A.; Fanciulli, M.; Palma, F.; Irrera, F.

2012-07-01

Al-doped ZrO2 (Al-ZrO2) films deposited by atomic layer deposition onto silicon substrates and the interface with the TaN metal gate are investigated. In particular, structural properties of as-grown and annealed films in the 6-26 nm thickness range, as well as leakage and capacitive behavior of metal-oxide-semiconductor stacks are characterized. As-deposited Al-ZrO2 films in the mentioned thickness range are amorphous and crystallize in the ZrO2 cubic phase after thermal treatment at 900 °C. Correspondingly, the dielectric constant (k) value increases from 20 ± 1 to 27 ± 2. The Al-ZrO2 layers exhibit uniform composition through the film thickness and are thermally stable on Si, whereas chemical reactions take place at the TaN/Al-ZrO2 interface. A transient capacitance technique is adopted for monitoring charge trapping and flat band instability at short and long time scales. The role of traps nearby the TaN/Al-ZrO2 interface is discussed and compared with other metal/high-k oxide films. Further, analytical modeling of the flat band voltage shift with a power-law dependence on time allows extracting features of bulk traps close to the silicon/oxide interface, which exhibit energy levels in the 1.4-1.9 eV range above the valence band of the Al-ZrO2.

Active shunt capacitance cancelling oscillator circuit

DOEpatents

Wessendorf, Kurt O.

2003-09-23

An oscillator circuit is disclosed which can be used to produce oscillation using a piezoelectric crystal, with a frequency of oscillation being largely independent of any shunt capacitance associated with the crystal (i.e. due to electrodes on the surfaces of the crystal and due to packaging and wiring for the crystal). The oscillator circuit is based on a tuned gain stage which operates the crystal at a frequency, f, near a series resonance frequency, f.sub.S. The oscillator circuit further includes a compensation circuit that supplies all the ac current flow through the shunt resistance associated with the crystal so that this ac current need not be supplied by the tuned gain stage. The compensation circuit uses a current mirror to provide the ac current flow based on the current flow through a reference capacitor that is equivalent to the shunt capacitance associated with the crystal. The oscillator circuit has applications for driving piezoelectric crystals for sensing of viscous, fluid or solid media by detecting a change in the frequency of oscillation of the crystal and a resonator loss which occur from contact of an exposed surface of the crystal by the viscous, fluid or solid media.

Effect of poly(3,4-ethylenedioxythiophene) (PEDOT) in carbon-based composite electrodes for electrochemical supercapacitors

NASA Astrophysics Data System (ADS)

Lei, Chunhong; Wilson, Peter; Lekakou, Constantina

Electrochemical double layer supercapacitor cells were fabricated and tested using composite electrodes of activated carbon with carbon black and poly(3,4-ethylenedioxythiophene) (PEDOT), and an organic electrolyte 1 M TEABF 4/PC solution. The effect of PEDOT on the performance of the EDLC cells was explored and the cells were characterised by electrochemical impedance spectroscopy (EIS), cyclic voltammetry and galvanostatic charge-discharge. A generalised equivalent circuit model was developed for which numerical simulations were performed to determine the properties and parameters of its components from the EIS data. It was found that the proposed model fitted successfully the data of all tested cells. PEDOT enhanced the electrode and cell capacitance via its pseudo-capacitance effect up to a maximum value for an optimum PEDOT loading and greatly increased the energy density of the cell while the maximum power density has been still maintained at supercapacitor levels. Furthermore, PEDOT replaced PVDF as a binder and harmful solvent release was reduced during electrode processing. Activated carbon-carbon black composite electrodes with PEDOT as binder were found to have specific capacitance superior to that of activated carbon-carbon black electrodes with PVDF binder.

Electrical detection of DNA hybridization: three extraction techniques based on interdigitated Al/Al2O3 capacitors.

PubMed

Moreno-Hagelsieb, L; Foultier, B; Laurent, G; Pampin, R; Remacle, J; Raskin, J-P; Flandre, D

2007-04-15

Based on interdigitated aluminum electrodes covered with Al(2)O(3) and silver precipitation via biotin-antibody coupled gold nano-labels as signal enhancement, three complementary electrical methods were used and compared to detect the hybridization of target DNA for concentrations down to the 50 pM of a PCR product from cytochrome P450 2b2 gene. Human hepatic cytochrome P450 (CYP) enzymes participate in detoxification metabolism of xenobiotics. Therefore, determination of mutational status of P450 gene in a patient could have a significant impact on the choice of a medical treatment. Our three electrical extraction procedures are performed on the same interdigitated capacitive sensor lying on a passivated silicon substrate and consist in the measurement of respectively the low-frequency inter-electrodes capacitance, the high-frequency self-resonance frequency, and the equivalent MOS capacitance between the short-circuited electrodes and the backside metallization of the silicon substrate. This study is the first of its kind as it opens the way for correlation studies and noise reduction techniques based on multiple electrical measurements of the same DNA hybridization event with a single sensor.

Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

NASA Astrophysics Data System (ADS)

Kiani, Ahmed; Hasko, David G.; Milne, William I.; Flewitt, Andrew J.

2013-04-01

It is widely reported that threshold voltage and on-state current of amorphous indium-gallium-zinc-oxide bottom-gate thin-film transistors are strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation.

Mobile patient monitoring based on impedance-loaded SAW-sensors.

PubMed

Karilainen, Anna; Finnberg, Thomas; Uelzen, Thorsten; Dembowski, Klaus; Müller, Jörg

2004-11-01

A remotely requestable, passive, short-range sensor network for measuring small voltages is presented. The sensor system is able to simultaneously monitor six small voltages in millivolt-range, and it can be used for Holter-electrocardiogram (ECG) and other biopotential monitoring, or in industrial applications. The sensors are based on a surface acoustic wave (SAW) delay line with voltage-dependent, impedance loading on a reflector interdigital transducer (IDT). The load circuit impedance is varied by the capacitance of the voltage-controlled varactor. High resolution is achieved by developing a MOS-capacitor with a thin oxide, low flat-band voltage, and zero-voltage capacitance in the space-charge region, as well as a high-Q-microcoil by thick metal electroplating. Simultaneous monitoring of multiple potentials is realized by time-division-multiplexing of different sensor signals.

Comparison of the x-ray attenuation properties of breast calcifications, aluminium, hydroxyapatite and calcium oxalate.

PubMed

Warren, L M; Mackenzie, A; Dance, D R; Young, K C

2013-04-07

Aluminium is often used as a substitute material for calcifications in phantom measurements in mammography. Additionally, calcium oxalate, hydroxyapatite and aluminium are used in simulation studies. This assumes that these materials have similar attenuation properties to calcification, and this assumption is examined in this work. Sliced mastectomy samples containing calcification were imaged at ×5 magnification using a digital specimen cabinet. Images of the individual calcifications were extracted, and the diameter and contrast of each calculated. The thicknesses of aluminium required to achieve the same contrast as each calcification when imaged under the same conditions were calculated using measurements of the contrast of aluminium foils. As hydroxyapatite and calcium oxalate are also used to simulate calcifications, the equivalent aluminium thicknesses of these materials were also calculated using tabulated attenuation coefficients. On average the equivalent aluminium thickness was 0.85 times the calcification diameter. For calcium oxalate and hydroxyapatite, the equivalent aluminium thicknesses were 1.01 and 2.19 times the thickness of these materials respectively. Aluminium and calcium oxalate are suitable substitute materials for calcifications. Hydroxyapatite is much more attenuating than the calcifications and aluminium. Using solid hydroxyapatite as a substitute for calcification of the same size would lead to excessive contrast in the mammographic image.

Polycrystalline Ba0.6Sr0.4TiO3 thin films on r-plane sapphire: Effect of film thickness on strain and dielectric properties

NASA Astrophysics Data System (ADS)

Fardin, E. A.; Holland, A. S.; Ghorbani, K.; Akdogan, E. K.; Simon, W. K.; Safari, A.; Wang, J. Y.

2006-10-01

Polycrystalline Ba0.6Sr0.4TiO3 (BST) films grown on r-plane sapphire exhibit strong variation of in-plane strain over the thickness range of 25-400nm. At a critical thickness of ˜200nm, the films are strain relieved; in thinner films, the strain is tensile, while compressive strain was observed in the 400nm film. Microwave properties of the films were measured from 1to20GHz by the interdigital capacitor method. A capacitance tunability of 64% was observed in the 200nm film, while thinner films showed improved Q factor. These results demonstrate the possibility of incorporating frequency agile BST-based devices into the silicon on sapphire process.

Tuning the morphology and structure of nanocarbons with activating agents for ultrafast ionic liquid-based supercapacitors

NASA Astrophysics Data System (ADS)

Cui, Yongpeng; Wang, Huanlei; Mao, Nan; Yu, Wenhua; Shi, Jing; Huang, Minghua; Liu, Wei; Chen, Shougang; Wang, Xin

2017-09-01

The increasing demand for supercapacitors with high energy and power density has attracted extensive attention in designing advanced carbon materials with high accessible surface area, hierarchical porosity, and 2D/3D morphology. Here, we report a new approach to tune the morphology and structure of the nanocarbons by using methyl cellulose as the precursor. Due to the varying effect of different activating agents, the interconnected sheet-like carbon with a high surface area of up to 2285 m2 g-1 and a thickness down to ∼4 nm can be obtained. These important characteristics make the nanocarbons demonstrate a high capacitance of 144 F g-1 at 1 A g-1 and 20 °C, and an excellent capacitance retention ratio of 64% at 100 A g-1 in ionic liquid. Because of the high fraction of meso/macropores for nanocarbons, an outstanding capacitance of 116 F g-1 can be achieved at 0 °C, with a high capacitance retention ratio of 39% at 100 A g-1. A high energy of 16-17 and 9-10 W h kg-1 can be maintained at 20 and 0 °C when the supercapacitor is charged in less than 1s. The excellent electrochemical response of nanocarbons suggests that the proposed preparation process is promising for developing advanced carbon electrodes.

A facile approach to fabricate flexible all-solid-state supercapacitors based on MnFe2O4/graphene hybrids

NASA Astrophysics Data System (ADS)

Cai, Weihua; Lai, Ting; Dai, Wanlin; Ye, Jianshan

2014-06-01

A critical challenge for the construction of flexible electrochemical capacitors is the preparation of flexible electrodes with large specific capacitance and robust mechanical strength. Here, we demonstrate a facile approach to make high performance and flexible electrodes by dropping MnFe2O4/graphene hybrid inks onto flexible graphite sheets (as current collectors and substrates) and drying under an infrared lamp. MnFe2O4/graphene hybrid inks are synthesized by immobilizing the MnFe2O4 microspheres on the graphene nanosheets via a simple solvothermal route. Electrochemical studies show that MnFe2O4/graphene exhibits a high capacitance of 300 F g-1 at a current density of 0.3 A g-1. In addition, the excellent electrochemical performance of a supercapacitor consisting of a sandwich structure of two pieces of MnFe2O4/graphene hybrids modified electrodes separated by polyvinyl alcohol (PVA)-H2SO4 gel electrolyte is further explored. Our studies reveal that the flexible supercapacitor device with 227 μm thickness can achieve a maximum specific capacitance of 120 F g-1 at a current density of 0.1 A g-1 and excellent cycle performance retaining 105% capacitance after 5000 cycles. This research may offer a method for the fabrication of lightweight, stable, flexible and high performance energy storage devices.

A Study on Dielectric Properties of Cadmium Sulfide-Zinc Sulfide Core-Shell Nanocomposites for Application as Nanoelectronic Filter Component in the Microwave Domain

NASA Astrophysics Data System (ADS)

Devi, Jutika; Datta, Pranayee

2018-07-01

Complex permittivities of cadmium sulfide (CdS), zinc sulfide (ZnS), and of cadmium sulfide-zinc sulfide (CdS/ZnS) core-shell nanoparticles embedded in a polyvinyl alcohol matrix (PVA) were measured in liquid phase using a VectorNetwork Analyzer in the frequency range of 500 MHz-10 GHz. These nanocomposites are modeled as an embedded capacitor, and their electric field distribution and polarization have been studied using COMSOL Multiphysics software. By varying the thickness of the shell and the number of inclusions, the capacitance values were estimated. It was observed that CdS, ZnS and CdS/ZnS core-shell nanoparticles embedded in a polyvinyl alcohol matrix show capacitive behavior. There is a strong influence of the dielectric properties in the capacitive behavior of the embedded nanocapacitor. The capping matrix, position and filling factors of nanoinclusions all affect the capacitive behavior of the tested nanocomposites. Application of the CdS, ZnS and CdS/ZnS core-shell nanocomposite as the passive low-pass filter circuit has also been investigated. From the present study, it has been found that CdS/ZnS core-shell nanoparticles embedded in PVA matrix are potential structures for application as nanoelectronic filter components in different areas of communication.

A Study on Dielectric Properties of Cadmium Sulfide-Zinc Sulfide Core-Shell Nanocomposites for Application as Nanoelectronic Filter Component in the Microwave Domain

NASA Astrophysics Data System (ADS)

Devi, Jutika; Datta, Pranayee

2018-03-01

Complex permittivities of cadmium sulfide (CdS), zinc sulfide (ZnS), and of cadmium sulfide-zinc sulfide (CdS/ZnS) core-shell nanoparticles embedded in a polyvinyl alcohol matrix (PVA) were measured in liquid phase using a VectorNetwork Analyzer in the frequency range of 500 MHz-10 GHz. These nanocomposites are modeled as an embedded capacitor, and their electric field distribution and polarization have been studied using COMSOL Multiphysics software. By varying the thickness of the shell and the number of inclusions, the capacitance values were estimated. It was observed that CdS, ZnS and CdS/ZnS core-shell nanoparticles embedded in a polyvinyl alcohol matrix show capacitive behavior. There is a strong influence of the dielectric properties in the capacitive behavior of the embedded nanocapacitor. The capping matrix, position and filling factors of nanoinclusions all affect the capacitive behavior of the tested nanocomposites. Application of the CdS, ZnS and CdS/ZnS core-shell nanocomposite as the passive low-pass filter circuit has also been investigated. From the present study, it has been found that CdS/ZnS core-shell nanoparticles embedded in PVA matrix are potential structures for application as nanoelectronic filter components in different areas of communication.

Climate-related trends in sapwood biophysical properties in two conifers: avoidance of hydraulic dysfunction through coordinated adjustments in xylem efficiency, safety and capacitance.

PubMed

Barnard, David M; Meinzer, Frederick C; Lachenbruch, Barbara; McCulloh, Katherine A; Johnson, Daniel M; Woodruff, David R

2011-04-01

In the Pacific north-west, the Cascade Mountain Range blocks much of the precipitation and maritime influence of the Pacific Ocean, resulting in distinct climates east and west of the mountains. The current study aimed to investigate relationships between water storage and transport properties in populations of Douglas-fir (Pseudotsuga menziesii) and ponderosa pine (Pinus ponderosa) adapted to both climates. Sapwood thickness, capacitance, vulnerability to embolism, and axial and radial conductivity were measured on samples collected from trunks of mature trees. The sapwood of ponderosa pine was three to four times thicker than Douglas-fir. Radial conductivity was higher in west-side populations of both species, but axial conductivity was higher in the east-side populations and in Douglas-fir. Eastern populations of both species had sapwood that was more vulnerable to embolism than west-side populations. Sapwood capacitance was similar between species, but was about twice as great in east-side populations (580 kg m⁻³ MPa⁻¹) as in west-side populations (274 kg m⁻³ MPa⁻¹). Capacitance was positively correlated with both mean embolism pressure and axial conductivity across species and populations, suggesting that coordinated adjustments in xylem efficiency, safety and water storage capacity may serve to avoid embolism along a gradient of increasing aridity. © 2011 Blackwell Publishing Ltd.

Quantitative thickness measurement of polarity-inverted piezoelectric thin-film layer by scanning nonlinear dielectric microscopy

NASA Astrophysics Data System (ADS)

Odagawa, Hiroyuki; Terada, Koshiro; Tanaka, Yohei; Nishikawa, Hiroaki; Yanagitani, Takahiko; Cho, Yasuo

2017-10-01

A quantitative measurement method for a polarity-inverted layer in ferroelectric or piezoelectric thin film is proposed. It is performed nondestructively by scanning nonlinear dielectric microscopy (SNDM). In SNDM, linear and nonlinear dielectric constants are measured using a probe that converts the variation of capacitance related to these constants into the variation of electrical oscillation frequency. In this paper, we describe a principle for determining the layer thickness and some calculation results of the output signal, which are related to the radius of the probe tip and the thickness of the inverted layer. Moreover, we derive an equation that represents the relationship between the output signal and the oscillation frequency of the probe and explain how to determine the thickness from the measured frequency. Experimental results in Sc-doped AlN piezoelectric thin films that have a polarity-inverted layer with a thickness of 1.5 µm fabricated by radio frequency magnetron sputtering showed a fairly good value of 1.38 µm for the thickness of the polarity-inverted layer.

Macroscopic fibres of CNTs as electrodes for multifunctional electric double layer capacitors: from quantum capacitance to device performance

NASA Astrophysics Data System (ADS)

Senokos, E.; Reguero, V.; Palma, J.; Vilatela, J. J.; Marcilla, Rebeca

2016-02-01

In this work we present a combined electrochemical and mechanical study of mesoporous electrodes based on CNT fibres in the context of electric double layer capacitors. We show that through control of the synthetic and assembly processes of the fibres, it is possible to obtain an active material that combines a surface area of 250 m2 g-1, high electrical conductivity (3.5 × 105 S m-1) and mechanical properties in the high-performance range including toughness (35 J g-1) comparable to that of aramid fibre (e.g. Kevlar). These properties are a consequence of the predominant orientation of the CNTs, observed by wide- and small-angle X-ray diffraction, and to the exceptionally long CNT length on the millimetre scale. Cyclic voltammetry measurements in a three-electrode configuration and using 1-butyl-3-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide (PYR14TFSI) ionic liquid electrolyte, show that the CNT fibres have a large quantum capacitance, evidenced by the near linear dependence of geometric capacitance (and conductivity) on potential bias. This reflects the low dimensionality of the CNT building blocks, which were purposely synthesised to have 1-5 layers and a high degree of graphitization. From the charge-discharge measurements of supercapacitor devices with symmetric CNT fibre electrodes we obtain power and energy densities as high as 58 kW kg-1 and 14 Wh kg-1, respectively. These record-high values for CNT fibre-based supercapacitors, are a consequence of the low equivalent series resistance due to the high conductivity of the fibres, the large contribution from quantum capacitance, and the wide stability window of the ionic liquid (3.5 V). Cycle life experiments demonstrate stable capacitance and energy retention over 10 000 cycles of charge-discharge at 3.5 V.In this work we present a combined electrochemical and mechanical study of mesoporous electrodes based on CNT fibres in the context of electric double layer capacitors. We show that through control of the synthetic and assembly processes of the fibres, it is possible to obtain an active material that combines a surface area of 250 m2 g-1, high electrical conductivity (3.5 × 105 S m-1) and mechanical properties in the high-performance range including toughness (35 J g-1) comparable to that of aramid fibre (e.g. Kevlar). These properties are a consequence of the predominant orientation of the CNTs, observed by wide- and small-angle X-ray diffraction, and to the exceptionally long CNT length on the millimetre scale. Cyclic voltammetry measurements in a three-electrode configuration and using 1-butyl-3-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide (PYR14TFSI) ionic liquid electrolyte, show that the CNT fibres have a large quantum capacitance, evidenced by the near linear dependence of geometric capacitance (and conductivity) on potential bias. This reflects the low dimensionality of the CNT building blocks, which were purposely synthesised to have 1-5 layers and a high degree of graphitization. From the charge-discharge measurements of supercapacitor devices with symmetric CNT fibre electrodes we obtain power and energy densities as high as 58 kW kg-1 and 14 Wh kg-1, respectively. These record-high values for CNT fibre-based supercapacitors, are a consequence of the low equivalent series resistance due to the high conductivity of the fibres, the large contribution from quantum capacitance, and the wide stability window of the ionic liquid (3.5 V). Cycle life experiments demonstrate stable capacitance and energy retention over 10 000 cycles of charge-discharge at 3.5 V. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07697h

Particle size effect in porous film electrodes of ligand-modified graphene for enhanced supercapacitor performance

DOE PAGES

Jang, Gyoung Gug; Song, Bo; Moon, Kyoung-sik; ...

2017-04-17

Graphene-based electrodes for high performance supercapacitors are developed by taking advantage of particle size control, large mass loading, and surface functionalization of reduced graphene oxide (rGO) sheets. Two controlled sizes of graphene sheets (100 nm vs. 45 μm average lateral dimensions) were prepared to study two-electrode system performance. The nano-size graphenes led to the formation of mesoporous films, resulting in higher capacitance, better capacitance retension and lower equivalent series resistance (ESR), indicating better surface usability for diffusion and accessibility of electrolyte ions by shortening transport paths (compared with horizontally stacked films from micro-sized graphenes). For studies using an aqueous electrolyte,more » the maximum specific capacitance of nano-rGO film was 302 F/g (at 1 A/g with 4.3 mg/cm 2 of mass loading), which was ~2.4 times higher than micro-rGO film, and achieved a ~67% reduced ESR. With an organic electrolyte, the nano-rGO delivered ~4.2 times higher capacitance (115 F/g at 2 A/g with 4.3 mg/cm 2), 4.0 times lower IR drops, and an order-of-magnitude lower charge-transfer resistance with an energy density of 18.7 Wh/kg. Finally, the results of this work indicate that the size control of graphene sheet particles for film deposit electrodes can be a simple but effective approach to improve supercapacitor performance.« less

PGE(2) activation of apical membrane Cl(-) channels in A6 epithelia: impedance analysis.

PubMed Central

Păunescu, T G; Helman, S I

2001-01-01

Measurements of transepithelial electrical impedance of continuously short-circuited A6 epithelia were made at audio frequencies (0.244 Hz to 10.45 kHz) to investigate the time course and extent to which prostaglandin E(2) (PGE(2)) modulates Cl(-) transport and apical membrane capacitance in this cell-cultured model epithelium. Apical and basolateral membrane resistances were determined by nonlinear curve-fitting of the impedance vectors at relatively low frequencies (<50 Hz) to equations (Păunescu, T. G., and S. I. Helman. 2001. Biophys. J. 81:838--851) where depressed Nyquist impedance semicircles were characteristic of the membrane impedances under control Na(+)-transporting and amiloride-inhibited conditions. In all tissues (control, amiloride-blocked, and amiloride-blocked and furosemide-pretreated), PGE(2) caused relatively small (< approximately 3 microA/cm(2)) and rapid (<60 s) maximal increase of chloride current due to activation of a rather large increase of apical membrane conductance that preceded significant activation of Na(+) transport through amiloride-sensitive epithelial Na(+) channels (ENaCs). Apical membrane capacitance was frequency-dependent with a Cole-Cole dielectric dispersion whose relaxation frequency was near 150 Hz. Analysis of the time-dependent changes of the complex frequency-dependent equivalent capacitance of the cells at frequencies >1.5 kHz revealed that the mean 9.8% increase of capacitance caused by PGE(2) was not correlated in time with activation of chloride conductance, but rather correlated with activation of apical membrane Na(+) transport. PMID:11463630

Particle size effect in porous film electrodes of ligand-modified graphene for enhanced supercapacitor performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jang, Gyoung Gug; Song, Bo; Moon, Kyoung-sik

Graphene-based electrodes for high performance supercapacitors are developed by taking advantage of particle size control, large mass loading, and surface functionalization of reduced graphene oxide (rGO) sheets. Two controlled sizes of graphene sheets (100 nm vs. 45 μm average lateral dimensions) were prepared to study two-electrode system performance. The nano-size graphenes led to the formation of mesoporous films, resulting in higher capacitance, better capacitance retension and lower equivalent series resistance (ESR), indicating better surface usability for diffusion and accessibility of electrolyte ions by shortening transport paths (compared with horizontally stacked films from micro-sized graphenes). For studies using an aqueous electrolyte,more » the maximum specific capacitance of nano-rGO film was 302 F/g (at 1 A/g with 4.3 mg/cm 2 of mass loading), which was ~2.4 times higher than micro-rGO film, and achieved a ~67% reduced ESR. With an organic electrolyte, the nano-rGO delivered ~4.2 times higher capacitance (115 F/g at 2 A/g with 4.3 mg/cm 2), 4.0 times lower IR drops, and an order-of-magnitude lower charge-transfer resistance with an energy density of 18.7 Wh/kg. Finally, the results of this work indicate that the size control of graphene sheet particles for film deposit electrodes can be a simple but effective approach to improve supercapacitor performance.« less

Designing a Novel Polymer Electrolyte for Improving the Electrode/Electrolyte Interface in Flexible All-Solid-State Electrical Double-Layer Capacitors.

PubMed

Wang, Jeng-An; Lu, Yi-Ting; Lin, Sheng-Chi; Wang, Yu-Sheng; Ma, Chen-Chi M; Hu, Chi-Chang

2018-05-30

A novel copolymer, polyurethane-poly(acrylic acid) (PAA), is successfully synthesized from poly(acrylic acid) (PAA) backbone cross-linked with waterborne polyurethane (WPU). This sticky polymer, which is neutralized with 1 M KOH and then soaked in 1 M KOH (denoted as WPU-PAAK-K), provides an ionic conductivity greater than 10 -2 S cm -1 and acts as a gel electrolyte perfectly improving the electrode/electrolyte interfaces in a flexible all-solid-state electrical double-layer capacitor (EDLC). The PAA backbone chains in the copolymer increase the amount of carboxyl groups and promote the segmental motion. The carboxyl groups enhance the water-uptake capacity, which facilitates the ion transport and promotes the ionic conductivity. The cross-linked agent, WPU chains, effectively maintains the rich water content and provides mechanical stickiness to bind two electrodes together. An acid-treated carbon paper (denoted as ACP) combining with such a gel polymer electrolyte demonstrates excellent capacitive behavior with a high areal capacitance of 211.6 mF cm -2 at 10 mV s -1 . A full cell consisting of ACP/WPU-PAAK-K/ACP displays a low equivalent series resistance of 0.44 Ω from the electrochemical impedance spectroscopic results. An all-solid-state ACP/WPU-PAAK-K/ACP EDLC provides an areal specific capacitance of 94.6 mF cm -2 at 1 mA cm -2 . This device under 180° bending shows a capacitance retention over 90%, revealing its remarkable flexibility.

Comparison of lead attenuation and lead hardening equivalence of materials used in respect of diagnostic X-ray shielding.

PubMed

Okunade, Akintunde Akangbe

2002-12-01

Present interest is in the shielding of diagnostic X-ray units. Numerical comparison has been made of the attenuation and hardening properties of lead and some particular alternative materials: steel, plate glass and gypsum wallboard. Results show, for particular choices of thickness, that lead and steel can be made to provide closely similar attenuation and spectral hardening, values of lead attenuation equivalent (LAE) and lead hardening equivalent (LHE) thicknesses being nearly the same. Significant differences in the attenuation and hardening properties of lead are found in comparison with plate glass and gypsum wallboard. LAE produces better matching of exposure for lead-plate glass and lead-gypsum wallboard than LHE.

XFEM with equivalent eigenstrain for matrix-inclusion interfaces

NASA Astrophysics Data System (ADS)

Benvenuti, Elena

2014-05-01

Several engineering applications rely on particulate composite materials, and numerical modelling of the matrix-inclusion interface is therefore a crucial part of the design process. The focus of this work is on an original use of the equivalent eigenstrain concept in the development of a simplified eXtended Finite Element Method. Key points are: the replacement of the matrix-inclusion interface by a coating layer with small but finite thickness, and its simulation as an inclusion with an equivalent eigenstrain. For vanishing thickness, the model is consistent with a spring-like interface model. The problem of a spherical inclusion within a cylinder is solved. The results show that the proposed approach is effective and accurate.

A novel low profile wireless flow sensor to monitor hemodynamic changes in cerebral aneurysm

NASA Astrophysics Data System (ADS)

Chen, Yanfei; Jankowitz, Brian T.; Cho, Sung Kwon; Chun, Youngjae

2015-03-01

A proof of concept of low-profile flow sensor has been designed, fabricated, and subsequently tested to demonstrate its feasibility for monitoring hemodynamic changes in cerebral aneurysm. The prototype sensor contains three layers, i.e., a thin polyurethane layer was sandwiched between two sputter-deposited thin film nitinol layers (6μm thick). A novel superhydrophilic surface treatment was used to create hemocompatible surface of thin nitinol electrode layers. A finite element model was conducted using ANSYS Workbench 15.0 Static Structural to optimize the dimensions of flow sensor. A computational fluid dynamics calculations were performed using ANSYS Workbench Fluent to assess the flow velocity patterns within the aneurysm sac. We built a test platform with a z-axis translation stage and an S-beam load cell to compare the capacitance changes of the sensors with different parameters during deformation. Both LCR meter and oscilloscope were used to measure the capacitance and the resonant frequency shifts, respectively. The experimental compression tests demonstrated the linear relationship between the capacitance and applied compression force and decreasing the length, width and increasing the thickness improved the sensor sensitivity. The experimentally measured resonant frequency dropped from 12.7MHz to 12.48MHz, indicating a 0.22MHz shift with 200g ( 2N) compression force while the theoretical resonant frequency shifted 0.35MHz with 50g ( 0.5N). Our recent results demonstrated a feasibility of the low-profile flow sensor for monitoring haemodynamics in cerebral aneurysm region, as well as the efficacy of the use of the surface treated thin film nitinol for the low-profile sensor materials.

High Bandwidth, Fine Resolution Deformable Mirror Design.

DTIC Science & Technology

1980-03-01

Low Temperature Solders 68 B.6 Influence Function Parameters 68 APPENDIX C 19 Capacitance Measurement 69 ACCESSION for NTIS white Sectloo ODC Buff...Multilayer actuator: Dilatation versus applied electric field 10 Figure 3 - Multilayer actuator: Influence function 11 Figure 4 - Honeycomb device...bimorph 20 Figure 8 - Bimorph device: Influence function of a bimorph device which has a glass plate 0.20 cm thick 24 Figure 9 - Bimorph device

Efficiency of SparkJet

NASA Technical Reports Server (NTRS)

Golbabaei-Asl, M.; Knight, D.; Wilkinson, S.

2013-01-01

The thermal efficiency of a SparkJet is evaluated by measuring the impulse response of a pendulum subject to a single spark discharge. The SparkJet is attached to the end of a pendulum. A laser displacement sensor is used to measure the displacement of the pendulum upon discharge. The pendulum motion is a function of the fraction of the discharge energy that is channeled into the heating of the gas (i.e., increasing the translational-rotational temperature). A theoretical perfect gas model is used to estimate the portion of the energy from the heated gas that results in equivalent pendulum displacement as in the experiment. The earlier results from multiple runs for different capacitances of C = 3, 5, 10, 20, and 40(micro)F demonstrate that the thermal efficiency decreases with higher capacitive discharges.1 In the current paper, results from additional run cases have been included and confirm the previous results

Effect of illumination on the dielectrical properties of P3HT:PC70BM nanocomposites

NASA Astrophysics Data System (ADS)

Hamza, Saidi; Mhamdi, Asya; Aloui, Walid; Bouazizi, Abdelaziz; Khirouni, Kamel

2017-05-01

In this work, the effects of light-generated carriers on the dielectric properties of the structure ITO/PEDOT: PSS/P3HT:PC70BM/Al were carried out. Impedance spectroscopy was performed at an applied bias equal to the open-circuit. From the real and imaginary part of the impedance, a dipolar relaxation type was observed, which decreased in the presence of light due to an increase in the electron mobility. The Cole-Cole diagram fit using a parallel model R-CPE equivalent circuit leads to the comparison of parallel resistances (R p) and capacitance (CPE) in dark and under illumination. The decrease of R p is related to the increases in the photo-generated charge carrier density. The increase in the capacitance is related to the enhancement of the P3HT/PCBM interface homogeneity.

Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parui, Subir, E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu; Ribeiro, Mário; Atxabal, Ainhoa

The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al{sub 2}O{sub 3}/NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important formore » understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.« less

Characterization of Resistances of a Capacitive Deionization System

DOE PAGES

Qu, Yatian; Baumann, Theodore F.; Santiago, Juan G.; ...

2015-07-27

Capacitive deionization (CDI) is a promising desalination technology, which operates at low pressure, low temperature, requires little infrastructure, and has the potential to consume less energy for brackish water desalination. However, CDI devices consume significantly more energy than the theoretical thermodynamic minimum, and this is at least partly due to resistive power dissipation. We here report our efforts to characterize electric resistances in a CDI system, with a focus on the resistance associated with the contact between current collectors and porous electrodes. We present an equivalent circuit model to describe resistive components in a CDI cell. We propose measurable figuresmore » of merit to characterize cell resistance. We also show that contact pressure between porous electrodes and current collectors can significantly reduce contact resistance. As a result, we propose and test an alternative electrical contact configuration which uses a pore-filling conductive adhesive (silver epoxy) and achieves significant reductions in contact resistance.« less

A Study of Dip-Coatable, High-Capacitance Ion Gel Dielectrics for 3D EWOD Device Fabrication

PubMed Central

Clement, Carlos E.; Jiang, Dongyue; Thio, Si Kuan; Park, Sung-Yong

2017-01-01

We present a dip-coatable, high-capacitance ion gel dielectric for scalable fabrication of three-dimensional (3D) electrowetting-on-dielectric (EWOD) devices such as an n × n liquid prism array. Due to the formation of a nanometer-thick electric double layer (EDL) capacitor, an ion gel dielectric offers two to three orders higher specific capacitance (c ≈ 10 μF/cm2) than that of conventional dielectrics such as SiO2. However, the previous spin-coating method used for gel layer deposition poses several issues for 3D EWOD device fabrication, particularly when assembling multiple modules. Not only does the spin-coating process require multiple repetitions per module, but the ion gel layer also comes in risks of damage or contamination due to handling errors caused during assembly. In addition, it was observed that the chemical formulation previously used for the spin-coating method causes the surface defects on the dip-coated gel layers and thus leads to poor EWOD performance. In this paper, we alternatively propose a dip-coating method with modified gel solutions to obtain defect-free, functional ion gel layers without the issues arising from the spin-coating method for 3D device fabrication. A dip-coating approach offers a single-step coating solution with the benefits of simplicity, scalability, and high throughput for deposition of high-capacitance gel layers on non-planar EWOD devices. An ion gel solution was prepared by combining the [EMIM][TFSI] ionic liquid and the [P(VDF-HFP)] copolymer at various wt % ratios in acetone solvent. Experimental studies were conducted to fully understand the effects of chemical composition ratios in the gel solution and how varying thicknesses of ion gel and Teflon layers affects EWOD performance. The effectiveness and potentiality of dip-coatable gel layers for 3D EWOD devices have been demonstrated through fabricating 5 × 1 arrayed liquid prisms using a single-step dip-coating method. Each prism module has been individually controlled to achieve spatial beam steering without the need for bulky mechanical moving parts. PMID:28772400

A Study of Dip-Coatable, High-Capacitance Ion Gel Dielectrics for 3D EWOD Device Fabrication.

PubMed

Clement, Carlos E; Jiang, Dongyue; Thio, Si Kuan; Park, Sung-Yong

2017-01-05

We present a dip-coatable, high-capacitance ion gel dielectric for scalable fabrication of three-dimensional (3D) electrowetting-on-dielectric (EWOD) devices such as an n × n liquid prism array. Due to the formation of a nanometer-thick electric double layer (EDL) capacitor, an ion gel dielectric offers two to three orders higher specific capacitance ( c ≈ 10 μF/cm²) than that of conventional dielectrics such as SiO₂. However, the previous spin-coating method used for gel layer deposition poses several issues for 3D EWOD device fabrication, particularly when assembling multiple modules. Not only does the spin-coating process require multiple repetitions per module, but the ion gel layer also comes in risks of damage or contamination due to handling errors caused during assembly. In addition, it was observed that the chemical formulation previously used for the spin-coating method causes the surface defects on the dip-coated gel layers and thus leads to poor EWOD performance. In this paper, we alternatively propose a dip-coating method with modified gel solutions to obtain defect-free, functional ion gel layers without the issues arising from the spin-coating method for 3D device fabrication. A dip-coating approach offers a single-step coating solution with the benefits of simplicity, scalability, and high throughput for deposition of high-capacitance gel layers on non-planar EWOD devices. An ion gel solution was prepared by combining the [EMIM][TFSI] ionic liquid and the [P(VDF-HFP)] copolymer at various wt % ratios in acetone solvent. Experimental studies were conducted to fully understand the effects of chemical composition ratios in the gel solution and how varying thicknesses of ion gel and Teflon layers affects EWOD performance. The effectiveness and potentiality of dip-coatable gel layers for 3D EWOD devices have been demonstrated through fabricating 5 × 1 arrayed liquid prisms using a single-step dip-coating method. Each prism module has been individually controlled to achieve spatial beam steering without the need for bulky mechanical moving parts.

Thickness optimization of the ZnO based TCO layer in a CZTSSe solar cell. Evolution of its performance with thickness when external temperature changes.

NASA Astrophysics Data System (ADS)

Chadel, Meriem; Moustafa Bouzaki, Mohammed; Chadel, Asma; Aillerie, Michel; Benyoucef, Boumediene

2017-07-01

The influence of the thickness of a Zinc Oxide (ZnO) transparent conductive oxide (TCO) layer on the performance of the CZTSSe solar cell is shown in detail. In a photovoltaic cell, the thickness of each layer largely influence the performance of the solar cell and optimization of each layer constitutes a complete work. Here, using the Solar Cell Capacitance Simulation (SCAPS) software, we present simulation results obtained in the analyze of the influence of the TCO layer thickness on the performance of a CZTSSe solar cell, starting from performance of a CZTSSe solar cell commercialized in 2014 with an initial efficiency equal to 12.6%. In simulation, the temperature was considered as a functioning parameter and the evolution of tthe performance of the cell for various thickness of the TCO layer when the external temperature changes is simulated and discussed. The best efficiency of the solar cell based in CZTSSe is obtained with a ZnO thickness equal to 50 nm and low temperature. Based on the considered marketed cell, we show a technological possible increase of the global efficiency achieving 13% by optimization of ZnO based TCO layer.

Myopic refractive shift represents dense nuclear sclerosis and thin lens in lenticular myopia.

PubMed

Cho, Yang Kyung; Huang, Wei; Nishimura, Eiichi

2013-09-01

It is not rare to meet unilateral nuclear sclerotic cataracts with myopic refractive changes (lenticular myopia) compared with the fellow eye in the ophthalmic examination of patients with decreased visual acuity. To determine the relationship between the myopic refractive changes and interocular differences of parameters, we investigated the interocular differences of ocular parameters between a lenticular myopic eye and the fellow eye. This retrospective study included 68 eyes of 34 patients, who showed unilateral lenticular myopia. We compared the dimensions of ocular component, such as anterior chamber depth, anterior chamber volume, lens thickness, vitreous chamber depth, lens position, lens density of nuclear sclerosis, anterior lens curvature and myopic refractive changes (spherical equivalent refraction) between the lenticular myopic eye and the myopic refractive change were examined. Statistically significant differences were found between the lenticular myopic eye and the fellow eye for anterior chamber depth (p = 0.015) anterior chamber volume (p = 0.031), lens thickness (p < 0.001), lens density of the nuclear sclerosis (p < 0.001) and the spherical equivalent myopic refractive changes (p < 0.001). Based on univariate analysis, the interocular difference in spherical equivalent refraction was significantly correlated with interocular differences of the density of the nuclear sclerosis (r = 0.79, p < 0.001), lens thickness (r = -0.70, p < 0.001) and vitreous chamber depth (r = 0.43, p = 0.012). Based on multiple regression analysis, the interocular difference in spherical equivalent refraction was significantly correlated with interocular differences of density of nuclear sclerosis (p < 0.001) and lens thickness (p = 0.007). The difference in myopic spherical change reflects the differences in the severity of nuclear sclerosis and lens thickness between the lenticular myopic eye and the fellow eye. © 2013 The Authors. Clinical and Experimental Optometry © 2013 Optometrists Association Australia.

The importance of ion size and electrode curvature on electrical double layers in ionic liquids.

PubMed

Feng, Guang; Qiao, Rui; Huang, Jingsong; Dai, Sheng; Sumpter, Bobby G; Meunier, Vincent

2011-01-21

Room-temperature ionic liquids (ILs) are an emerging class of electrolytes for supercapacitors. We investigate the effects of ion size and electrode curvature on the electrical double layers (EDLs) in two ILs 1-butyl-3-methylimidazolium chloride [BMIM][Cl] and 1-butyl-3-methylimidazolium hexafluorophosphate [BMIM][PF(6)], using a combination of molecular dynamics (MD) and quantum density functional theory (DFT) simulations. The sizes of the counter-ion and co-ion affect the ion distribution and orientational structure of EDLs. The EDL capacitances near both planar and cylindrical electrodes were found to follow the order: [BMIM][Cl] (near the positive electrode) > [BMIM][PF(6)] (near the positive electrode) ≈ [BMIM][Cl] (near the negative electrode) ≈ [BMIM][PF(6)] (near the negative electrode). The EDL capacitance was also found to increase as the electrode curvature increases. These capacitance data can be fit to the Helmholtz model and the recently proposed exohedral electrical double-cylinder capacitor (xEDCC) model when the EDL thickness is properly parameterized, even though key features of the EDLs in ILs are not accounted for in these models. To remedy the shortcomings of existing models, we propose a "Multiple Ion Layers with Overscreening" (MILO) model for the EDLs in ILs that takes into account two critical features of such EDLs, i.e., alternating layering of counter-ions and co-ions and charge overscreening. The capacitance computed from the MILO model agrees well with the MD prediction. Although some input parameters of the MILO model must be obtained from MD simulations, the MILO model may provide a new framework for understanding many important aspects of EDLs in ILs (e.g., the variation of EDL capacitance with the electrode potential) that are difficult to interpret using classical EDL models and experiments.

In vivo CH3(CH2)11SAu SAM electrodes in the beating heart: in situ analytical studies relevant to pacemakers and interstitial biosensors.

PubMed

Chou, Howard A; Zavitz, Daniel H; Ovadia, Marc

2003-01-01

To study in vivo modification of the SAM equivalent circuit when a highly ordered SAM is used as a bioelectrode, dodecanethiolate SAM-Au intramuscular electrodes were studied in living rat heart in a challenging in situ perfused rat model by impedance spectroscopy, cyclic voltammetry, and neutron activation analysis (NAA). The SAM layer experienced disintegration in vivo biological system, as NAA detected the presence of Au atoms that had leached into the surrounding living tissue. Therefore, the underlying Au surface became exposed during biological implant. Study by impedance spectroscopy, however, revealed perfect capacitive behavior for the SAM, similar to in vitro behavior. Electrodes showed a pure capacitive Nyquist plot with 86.1-89.4 degrees near-vertical line segments as the equivalent circuit locus, as for a parallel plate capacitor. Impedance magnitude varied linearly with 1/omega excluding diffusionally limited ionic charge transport. There was no diffusional conductive element Z(W infinity ) or spatially confined Warburg impedance Z(D). The effect of in vivo exposure of a highly ordered SAM is a 'sealing over' effect of new defects by the binding of proteinaceous or lipid species in the biological milieu, a fact of significance for SAM electrodes used either as pacemaker electrodes or as a platform for in vivo biosensors.

Discharge processes and an electrical model of atmospheric pressure plasma jets in argon

NASA Astrophysics Data System (ADS)

Fang, Zhi; Shao, Tao; Yang, Jing; Zhang, Cheng

2016-01-01

In this paper, an atmospheric pressure plasma discharge in argon was generated using a needle-to-ring electrode configuration driven by a sinusoidal excitation voltage. The electric discharge processes and discharge characteristics were investigated by inspecting the voltage-current waveforms, Lissajous curves and lighting emission images. The change in discharge mode with applied voltage amplitude was studied and characterised, and three modes of corona discharge, dielectric barrier discharge (DBD) and jet discharge were identified, which appeared in turn with increasing applied voltage and can be distinguished clearly from the measured voltage-current waveforms, light-emission images and the changing gradient of discharge power with applied voltage. Based on the experimental results and discharge mechanism analysis, an equivalent electrical model and the corresponding equivalent circuit for characterising the whole discharge processes accurately was proposed, and the three discharge stages were characterised separately. A voltage-controlled current source (VCCS) associated with a resistance and a capacitance were used to represent the DBD stage, and the plasma plume and corona discharge were modelled by a variable capacitor in series with a variable resistor. Other factors that can influence the discharge, such as lead and stray capacitance values of the circuit, were also considered in the proposed model. Contribution to the Topical Issue "Recent Breakthroughs in Microplasma Science and Technology", edited by Kurt Becker, Jose Lopez, David Staack, Klaus-Dieter Weltmann and Wei Dong Zhu.

The simplest equivalent circuit of a pulsed dielectric barrier discharge and the determination of the gas gap charge transfer

NASA Astrophysics Data System (ADS)

Pipa, A. V.; Koskulics, J.; Brandenburg, R.; Hoder, T.

2012-11-01

The concept of the simplest equivalent circuit for a dielectric barrier discharge (DBD) is critically reviewed. It is shown that the approach is consistent with experimental data measured either in large-scale sinusoidal-voltage driven or miniature pulse-voltage driven DBDs. An expression for the charge transferred through the gas gap q(t) is obtained with an accurate account for the displacement current and the values of DBD reactor capacitance. This enables (i) the significant reduction of experimental error in the determination of q(t) in pulsed DBDs, (ii) the verification of the classical electrical theory of ozonizers about maximal transferred charge qmax, and (iii) the development of a graphical method for the determination of qmax from charge-voltage characteristics (Q-V plots, often referred as Lissajous figures) measured under pulsed excitation. The method of graphical presentation of qmax is demonstrated with an example of a Q-V plot measured under pulsed excitation. The relations between the discharge current jR(t), the transferred charge q(t), and the measurable parameters are presented in new forms, which enable the qualitative interpretation of the measured current and voltage waveforms without the knowledge about the value of the dielectric barrier capacitance Cd. Whereas for quantitative evaluation of electrical measurements, the accurate estimation of the Cd is important.

All-printed thin-film transistors from networks of liquid-exfoliated nanosheets

NASA Astrophysics Data System (ADS)

Kelly, Adam G.; Hallam, Toby; Backes, Claudia; Harvey, Andrew; Esmaeily, Amir Sajad; Godwin, Ian; Coelho, João; Nicolosi, Valeria; Lauth, Jannika; Kulkarni, Aditya; Kinge, Sachin; Siebbeles, Laurens D. A.; Duesberg, Georg S.; Coleman, Jonathan N.

2017-04-01

All-printed transistors consisting of interconnected networks of various types of two-dimensional nanosheets are an important goal in nanoscience. Using electrolytic gating, we demonstrate all-printed, vertically stacked transistors with graphene source, drain, and gate electrodes, a transition metal dichalcogenide channel, and a boron nitride (BN) separator, all formed from nanosheet networks. The BN network contains an ionic liquid within its porous interior that allows electrolytic gating in a solid-like structure. Nanosheet network channels display on:off ratios of up to 600, transconductances exceeding 5 millisiemens, and mobilities of >0.1 square centimeters per volt per second. Unusually, the on-currents scaled with network thickness and volumetric capacitance. In contrast to other devices with comparable mobility, large capacitances, while hindering switching speeds, allow these devices to carry higher currents at relatively low drive voltages.

A wide-band dual-polarized VHF microstrip antenna for global sensing of sea ice thickness

NASA Technical Reports Server (NTRS)

Huang, John; Hussein, Ziad; Petros, Argy

2005-01-01

A VHF microstrip patch antenna was developed to achieve a bandwidth of 45 MHz (30%) from 127 MHz to 172 MHz with dual-linear-polarization capability. This microstrip antenna used foam substrates and dual stacked patches with capacitive probe feeds to achieve wide bandwidth. Four such capacitive feeds were used to achieve dual polarizations with less than -20 dB of cross-polarization level. Twenty-four shorting pins were used on the lower patch to achieve acceptable isolation between the four feed probes. This antenna has a measured gain of 8.5 dB at 137 MHz and 10 dB at 162 MHz. By using the Method of Moments technique, multipath scattering patterns were calculated when the antenna is mounted on the outside of a Twin Otter aircraft.

Hydrogen gas sensors using a thin Ta2O5 dielectric film

NASA Astrophysics Data System (ADS)

Kim, Seongjeen

2014-12-01

A capacitive-type hydrogen gas sensor with a MIS (metal-insulator-semiconductor) structure was investigated for high-temperature applications. In this work, a tantalum oxide (Ta2O5) layer of tens of nanometers in thickness formed by oxidizing tantalum film in rapid thermal processing (RTP) was exploited with the purpose of sensitivity improvement. Silicon carbide (SiC), which is good even at high temperatures over 500 °C, was used as the substrate. We fabricated sensors composed of Pd/Ta2O5/SiC, and the dependences of the capacitance response properties and the I-V characteristics on the hydrogen concentration were analyzed from the temperature range of room temperature to 500 °C. As a result, our hydrogen sensor showed promising performance with respect to the sensitivity and the adaptability at high temperature.

The leaded apron revisited: does it reduce gonadal radiation dose in dental radiology?

PubMed

Wood, R E; Harris, A M; van der Merwe, E J; Nortjé, C J

1991-05-01

A tissue-equivalent anthropomorphic human phantom was used with a lithium fluoride thermoluminescent dosimetry system to evaluate the radiation absorbed dose to the ovarian and testicular region during dental radiologic procedures. Measurements were made with and without personal lead shielding devices consisting of thyroid collar and apron of 0.25 mm lead thickness equivalence. The radiation absorbed dose with or without lead shielding did not differ significantly from control dosimeters in vertex occlusal and periapical views (p greater than 0.05). Personal lead shielding devices did reduce gonadal dose in the case of accidental exposure (p less than 0.05). A leaded apron of 0.25 mm lead thickness equivalent was permeable to radiation in direct exposure testing.

Influence of micromachined targets on laser accelerated proton beam profiles

NASA Astrophysics Data System (ADS)

Dalui, Malay; Permogorov, Alexander; Pahl, Hannes; Persson, Anders; Wahlström, Claes-Göran

2018-03-01

High intensity laser-driven proton acceleration from micromachined targets is studied experimentally in the target-normal-sheath-acceleration regime. Conical pits are created on the front surface of flat aluminium foils of initial thickness 12.5 and 3 μm using series of low energy pulses (0.5-2.5 μJ). Proton acceleration from such micromachined targets is compared with flat foils of equivalent thickness at a laser intensity of 7 × 1019 W cm-2. The maximum proton energy obtained from targets machined from 12.5 μm thick foils is found to be slightly lower than that of flat foils of equivalent remaining thickness, and the angular divergence of the proton beam is observed to increase as the depth of the pit approaches the foil thickness. Targets machined from 3 μm thick foils, on the other hand, show evidence of increasing the maximum proton energy when the depths of the structures are small. Furthermore, shallow pits on 3 μm thick foils are found to be efficient in reducing the proton beam divergence by a factor of up to three compared to that obtained from flat foils, while maintaining the maximum proton energy.

49 CFR 238.223 - Locomotive fuel tanks.

Code of Federal Regulations, 2010 CFR

2010-10-01

... an industry standard providing at least an equivalent level of safety if approved by FRA under § 238..., at a minimum, be equivalent to a 5/16-inch thick steel plate with a yield strength of 25,000 pounds...

Fringing field effects in negative capacitance field-effect transistors with a ferroelectric gate insulator

NASA Astrophysics Data System (ADS)

Hattori, Junichi; Fukuda, Koichi; Ikegami, Tsutomu; Ota, Hiroyuki; Migita, Shinji; Asai, Hidehiro; Toriumi, Akira

2018-04-01

We study the effects of fringing electric fields on the behavior of negative-capacitance (NC) field-effect transistors (FETs) with a silicon-on-insulator body and a gate stack consisting of an oxide film, an internal metal film, a ferroelectric film, and a gate electrode using our own device simulator that can properly handle the complicated relationship between the polarization and the electric field in ferroelectric materials. The behaviors of such NC FETs and the corresponding metal-oxide-semiconductor (MOS) FETs are simulated and compared with each other to evaluate the effects of the NC of the ferroelectric film. Then, the fringing field effects are evaluated by comparing the NC effects in NC FETs with and without gate spacers. The fringing field between the gate stack, especially the internal metal film, and the source/drain region induces more charges at the interface of the film with the ferroelectric film. Accordingly, the function of the NC to modulate the gate voltage and the resulting function to improve the subthreshold swing are enhanced. We also investigate the relationships of these fringing field effects to the drain voltage and four design parameters of NC FETs, i.e., gate length, gate spacer permittivity, internal metal film thickness, and oxide film thickness.

Electrochemical Supercapacitive Performance of Spray-Deposited NiO Electrodes

NASA Astrophysics Data System (ADS)

Yadav, Abhijit A.; Chavan, U. J.

2018-04-01

Transition-metal oxides with porous structure are considered for use as promising electrodes for high-performance supercapacitors. Nanocrystalline nickel oxide (NiO) thin films have been prepared as active material for supercapacitors by spray pyrolysis. In this study, the effects of the film thickness on its structural, morphological, optical, electrical, and electrochemical properties were studied. X-ray diffraction analysis revealed cubic structure with average crystalline size of around 21 nm. Scanning electron microscopy showed porous morphology. The optical bandgap decreased from 3.04 eV to 2.97 eV with increase in the film thickness. Electrical resistivity measurements indicated semiconducting behavior. Cyclic voltammetry and galvanostatic charge/discharge study revealed good pseudocapacitive behavior. Specific capacitance of 564 F g-1 at scan rate of 5 mV s-1 and 553 F g-1 at current density of 1 A g-1 was observed. An NiO-based supercapacitor delivered specific energy of 22.8 W h kg-1 at specific power of 2.16 kW kg-1, and retained 93.01% specific capacitance at current density of 1 A g-1 after 1000 cycles. Therefore, taking advantage of the porous morphology that exists in the nanostructure, such NiO materials can be considered for use as promising electrodes for high-performance supercapacitors.

Carbachol-induced colonic mucus formation requires transport via NKCC1, K+ channels and CFTR

PubMed Central

Lindén, Sara K.; Alwan, Ala H.; Scholte, Bob J.; Hansson, Gunnar C.; Sjövall, Henrik

2016-01-01

The colonic mucosa protects itself from the luminal content by secreting mucus that keeps the bacteria at a distance from the epithelium. For this barrier to be effective, the mucus has to be constantly replenished which involves exocytosis and expansion of the secreted mucins. Mechanisms involved in regulation of mucus exocytosis and expansion are poorly understood, and the aim of this study was to investigate whether epithelial anion secretion regulates mucus formation in the colon. The muscarinic agonist carbachol was used to induce parallel secretion of anions and mucus, and by using established inhibitors of ion transport, we studied how inhibition of epithelial transport affected mucus formation in mouse colon. Anion secretion and mucin exocytosis were measured by changes in membrane current and epithelial capacitance, respectively. Mucus thickness measurements were used to determine the carbachol effect on mucus growth. The results showed that the carbachol-induced increase in membrane current was dependent on NKCC1 co-transport, basolateral K+ channels and Cftr activity. In contrast, the carbachol-induced increase in capacitance was partially dependent on NKCC1 and K+ channel activity, but did not require Cftr activity. Carbachol also induced an increase in mucus thickness that was inhibited by the NKCC1 blocker bumetanide. However, mice that lacked a functional Cftr channel did not respond to carbachol with an increase in mucus thickness, suggesting that carbachol-induced mucin expansion requires Cftr channel activity. In conclusion, these findings suggest that colonic epithelial transport regulates mucus formation by affecting both exocytosis and expansion of the mucin molecules. PMID:25139191

Carbachol-induced colonic mucus formation requires transport via NKCC1, K⁺ channels and CFTR.

PubMed

Gustafsson, Jenny K; Lindén, Sara K; Alwan, Ala H; Scholte, Bob J; Hansson, Gunnar C; Sjövall, Henrik

2015-07-01

The colonic mucosa protects itself from the luminal content by secreting mucus that keeps the bacteria at a distance from the epithelium. For this barrier to be effective, the mucus has to be constantly replenished which involves exocytosis and expansion of the secreted mucins. Mechanisms involved in regulation of mucus exocytosis and expansion are poorly understood, and the aim of this study was to investigate whether epithelial anion secretion regulates mucus formation in the colon. The muscarinic agonist carbachol was used to induce parallel secretion of anions and mucus, and by using established inhibitors of ion transport, we studied how inhibition of epithelial transport affected mucus formation in mouse colon. Anion secretion and mucin exocytosis were measured by changes in membrane current and epithelial capacitance, respectively. Mucus thickness measurements were used to determine the carbachol effect on mucus growth. The results showed that the carbachol-induced increase in membrane current was dependent on NKCC1 co-transport, basolateral K(+) channels and Cftr activity. In contrast, the carbachol-induced increase in capacitance was partially dependent on NKCC1 and K(+) channel activity, but did not require Cftr activity. Carbachol also induced an increase in mucus thickness that was inhibited by the NKCC1 blocker bumetanide. However, mice that lacked a functional Cftr channel did not respond to carbachol with an increase in mucus thickness, suggesting that carbachol-induced mucin expansion requires Cftr channel activity. In conclusion, these findings suggest that colonic epithelial transport regulates mucus formation by affecting both exocytosis and expansion of the mucin molecules.

Densely-packed graphene/conducting polymer nanoparticle papers for high-volumetric-performance flexible all-solid-state supercapacitors

NASA Astrophysics Data System (ADS)

Yang, Chao; Zhang, Liling; Hu, Nantao; Yang, Zhi; Wei, Hao; Xu, Zhichuan J.; Wang, Yanyan; Zhang, Yafei

2016-08-01

Graphene-based all-solid-state supercapacitors (ASSSCs) are one of the most ideal candidates for high-performance flexible power sources. The achievement of high volumetric energy density is highly desired for practical application of this type of ASSSCs. Here, we present a facile method to boost volumetric performances of graphene-based flexible ASSSCs through incorporation of ultrafine polyaniline-poly(4-styrenesulfonate) (PANI-PSS) nanoparticles in reduced graphene oxide (rGO) papers. A compact structure is obtained via intimate contact and π-π interaction between PANI-PSS nanoparticles and rGO sheets. The hybrid paper electrode with the film thickness of 13.5 μm, shows an extremely high volumetric specific capacitance of 272 F/cm3 (0.37 A/cm3 in a three-electrode cell). The assembled ASSSCs show a large volumetric specific capacitance of 217 F/cm3 (0.37 A/cm3 in a two-electrode cell), high volumetric energy and power density, excellent capacitance stability, small leakage current as well as low self-discharge characteristics, revealing the usefulness of this robust hybrid paper for high-performance flexible energy storage devices.

A Wirelessly Powered Smart Contact Lens with Reconfigurable Wide Range and Tunable Sensitivity Sensor Readout Circuitry

PubMed Central

Chiou, Jin-Chern; Hsu, Shun-Hsi; Huang, Yu-Chieh; Yeh, Guan-Ting; Liou, Wei-Ting; Kuei, Cheng-Kai

2017-01-01

This study presented a wireless smart contact lens system that was composed of a reconfigurable capacitive sensor interface circuitry and wirelessly powered radio-frequency identification (RFID) addressable system for sensor control and data communication. In order to improve compliance and reduce user discomfort, a capacitive sensor was embedded on a soft contact lens of 200 μm thickness using commercially available bio-compatible lens material and a standard manufacturing process. The results indicated that the reconfigurable sensor interface achieved sensitivity and baseline tuning up to 120 pF while consuming only 110 μW power. The range and sensitivity tuning of the readout circuitry ensured a reliable operation with respect to sensor fabrication variations and independent calibration of the sensor baseline for individuals. The on-chip voltage scaling allowed the further extension of the detection range and prevented the implementation of large on-chip elements. The on-lens system enabled the detection of capacitive variation caused by pressure changes in the range of 2.25 to 30 mmHg and hydration level variation from a distance of 1 cm using incident power from an RFID reader at 26.5 dBm. PMID:28067859

High capacitance of coarse-grained carbide derived carbon electrodes

DOE PAGES

Dyatkin, Boris; Gogotsi, Oleksiy; Malinovskiy, Bohdan; ...

2016-01-01

Here, we report exceptional electrochemical properties of supercapacitor electrodes composed of large, granular carbide-derived carbon (CDC) particles. We synthesized 70–250 μm sized particles with high surface area and a narrow pore size distribution, using a titanium carbide (TiC) precursor. Electrochemical cycling of these coarse-grained powders defied conventional wisdom that a small particle size is strictly required for supercapacitor electrodes and allowed high charge storage densities, rapid transport, and good rate handling ability. Moreover, the material showcased capacitance above 100 F g -1 at sweep rates as high as 250 mV s -1 in organic electrolyte. 250–1000 micron thick dense CDCmore » films with up to 80 mg cm -2 loading showed superior areal capacitances. The material significantly outperformed its activated carbon counterpart in organic electrolytes and ionic liquids. Furthermore, large internal/external surface ratio of coarse-grained carbons allowed the resulting electrodes to maintain high electrochemical stability up to 3.1 V in ionic liquid electrolyte. In addition to presenting novel insights into the electrosorption process, these coarse-grained carbons offer a pathway to low-cost, high-performance implementation of supercapacitors in automotive and grid-storage applications.« less

High capacitance of coarse-grained carbide derived carbon electrodes

NASA Astrophysics Data System (ADS)

Dyatkin, Boris; Gogotsi, Oleksiy; Malinovskiy, Bohdan; Zozulya, Yuliya; Simon, Patrice; Gogotsi, Yury

2016-02-01

We report exceptional electrochemical properties of supercapacitor electrodes composed of large, granular carbide-derived carbon (CDC) particles. Using a titanium carbide (TiC) precursor, we synthesized 70-250 μm sized particles with high surface area and a narrow pore size distribution. Electrochemical cycling of these coarse-grained powders defied conventional wisdom that a small particle size is strictly required for supercapacitor electrodes and allowed high charge storage densities, rapid transport, and good rate handling ability. The material showcased capacitance above 100 F g-1 at sweep rates as high as 250 mV s-1 in organic electrolyte. 250-1000 micron thick dense CDC films with up to 80 mg cm-2 loading showed superior areal capacitances. The material significantly outperformed its activated carbon counterpart in organic electrolytes and ionic liquids. Furthermore, large internal/external surface ratio of coarse-grained carbons allowed the resulting electrodes to maintain high electrochemical stability up to 3.1 V in ionic liquid electrolyte. In addition to presenting novel insights into the electrosorption process, these coarse-grained carbons offer a pathway to low-cost, high-performance implementation of supercapacitors in automotive and grid-storage applications.

Tunable Reduced Size Planar Folded Slot Antenna Utilizing Varactor Diodes

NASA Technical Reports Server (NTRS)

Scardelletti, Maximilian C.; Ponchak, George E.; Jordan, Jennifer L.; Jastram, Nathan; Mahaffey, Joshua V.

2010-01-01

A tunable folded slot antenna that utilizes varactor diodes is presented. The antenna is fabricated on Rogers 6006 Duriod with a dielectric constant and thickness of 6.15 and 635 m, respectively. A copper cladding layer of 17 m defines the antenna on the top side (no ground on backside). The antenna is fed with a CPW 50 (Omega) feed line, has a center frequency of 3 GHz, and incorporates Micrometrics microwave hyper-abrupt 500MHV varactors to tune the resonant frequency. The varactors have a capacitance range of 2.52 pF at 0 V to 0.4 pF at 20 V; they are placed across the radiating slot of the antenna. The tunable 10 dB bandwidth of the 3 GHz antenna is 150 MHz. The varactors also reduce the size of the antenna by 30% by capacitively loading the resonating slot line. At the center frequency, 3 GHz, the antenna has a measured return loss of 44 dB and a gain of 1.6 dBi. Full-wave electromagnetic simulations using HFSS are presented that validate the measured data. Index Terms capacitive loading, Duriod, folded slot antenna, varactor.

Direct laser-patterned micro-supercapacitors from paintable MoS2 films.

PubMed

Cao, Liujun; Yang, Shubin; Gao, Wei; Liu, Zheng; Gong, Yongji; Ma, Lulu; Shi, Gang; Lei, Sidong; Zhang, Yunhuai; Zhang, Shengtao; Vajtai, Robert; Ajayan, Pulickel M

2013-09-09

Micrometer-sized electrochemical capacitors have recently attracted attention due to their possible applications in micro-electronic devices. Here, a new approach to large-scale fabrication of high-capacitance, two-dimensional MoS2 film-based micro-supercapacitors is demonstrated via simple and low-cost spray painting of MoS2 nanosheets on Si/SiO2 chip and subsequent laser patterning. The obtained micro-supercapacitors are well defined by ten interdigitated electrodes (five electrodes per polarity) with 4.5 mm length, 820 μm wide for each electrode, 200 μm spacing between two electrodes and the thickness of electrode is ∼0.45 μm. The optimum MoS2 -based micro-supercapacitor exhibits excellent electrochemical performance for energy storage with aqueous electrolytes, with a high area capacitance of 8 mF cm(-2) (volumetric capacitance of 178 F cm(-3) ) and excellent cyclic performance, superior to reported graphene-based micro-supercapacitors. This strategy could provide a good opportunity to develop various micro-/nanosized energy storage devices to satisfy the requirements of portable, flexible, and transparent micro-electronic devices. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Controlling dielectric and relaxor-ferroelectric properties for energy storage by tuning Pb0.92La0.08Zr0.52Ti0.48O3 film thickness.

PubMed

Brown, Emery; Ma, Chunrui; Acharya, Jagaran; Ma, Beihai; Wu, Judy; Li, Jun

2014-12-24

The energy storage properties of Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films grown via pulsed laser deposition were evaluated at variable film thickness of 125, 250, 500, and 1000 nm. These films show high dielectric permittivity up to ∼1200. Cyclic I-V measurements were used to evaluate the dielectric properties of these thin films, which not only provide the total electric displacement, but also separate contributions from each of the relevant components including electric conductivity (D1), dielectric capacitance (D2), and relaxor-ferroelectric domain switching polarization (P). The results show that, as the film thickness increases, the material transits from a linear dielectric to nonlinear relaxor-ferroelectric. While the energy storage per volume increases with the film thickness, the energy storage efficiency drops from ∼80% to ∼30%. The PLZT films can be optimized for different energy storage applications by tuning the film thickness to optimize between the linear and nonlinear dielectric properties and energy storage efficiency.

Controlling Dielectric and Relaxor-Ferroelectric Properties for Energy Storage by Tuning Pb 0.92La 0.08Zr 0.52Ti 0.48O 3 Film Thickness

DOE PAGES

Brown, Emery; Ma, Chunrui; Acharya, Jagaran; ...

2014-12-24

The energy storage properties of Pb 0.92La 0.08Zr 0.52Ti 0.48O 3 (PLZT) films grown via pulsed laser deposition were evaluated at variable film thickness of 125, 250, 500, and 1000 nm. These films show high dielectric permittivity up to ~1200. Cyclic I–V measurements were used to evaluate the dielectric properties of these thin films, which not only provide the total electric displacement, but also separate contributions from each of the relevant components including electric conductivity (D1), dielectric capacitance (D2), and relaxor-ferroelectric domain switching polarization (P). Our results show that, as the film thickness increases, the material transits from a linearmore » dielectric to nonlinear relaxor-ferroelectric. And while the energy storage per volume increases with the film thickness, the energy storage efficiency drops from ~80% to ~30%. The PLZT films can be optimized for different energy storage applications by tuning the film thickness to optimize between the linear and nonlinear dielectric properties and energy storage efficiency.« less

Simulation of 1.5-mm-thick and 15-cm-diameter gated silicon drift X-ray detector operated with a single high-voltage source

NASA Astrophysics Data System (ADS)

Matsuura, Hideharu

2015-04-01

High-resolution silicon X-ray detectors with a large active area are required for effectively detecting traces of hazardous elements in food and soil through the measurement of the energies and counts of X-ray fluorescence photons radially emitted from these elements. The thicknesses and areas of commercial silicon drift detectors (SDDs) are up to 0.5 mm and 1.5 cm2, respectively. We describe 1.5-mm-thick gated SDDs (GSDDs) that can detect photons with energies up to 50 keV. We simulated the electric potential distributions in GSDDs with a Si thickness of 1.5 mm and areas from 0.18 to 168 cm2 at a single high reverse bias. The area of a GSDD could be enlarged simply by increasing all the gate widths by the same multiple, and the capacitance of the GSDD remained small and its X-ray count rate remained high.

Experimental analysis and flow visualization of a thin liquid film on a stationary and rotating disk

NASA Technical Reports Server (NTRS)

Thomas, S.; Faghri, A.; Hankey, W.

1991-01-01

The mean thickness of a thin liquid film of deionized water with a free surface on a stationary and rotating horizontal disk has been measured with a nonobtrusive capacitance technique. The measurements were taken when the rotational speed ranged from 0-300 rpm and the flow rate varied from 7.0-15.0 lpm. A flow visualization study of the thin film was also performed to determine the characteristics of the waves on the free surface. When the disk was stationary, a circular hydraulic jump was present on the disk. Upstream from the jump, the film thickness was determined by the inertial and frictional forces on the fluid, and the radial spreading of the film. The surface tension at the edge of the disk affected the film thickness downstream from the jump. For the rotating disk, the film thickness was dependent upon the inertial and frictional forces near the center of the disk and the centrifugal forces near the edge of the disk.

Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mukhtarova, Anna; Valdueza-Felip, Sirona; Redaelli, Luca

2016-04-18

We investigate the photovoltaic performance of pseudomorphic In{sub 0.1}Ga{sub 0.9}N/GaN multiple-quantum well (MQW) solar cells as a function of the total active region thickness. An increase in the number of wells from 5 to 40 improves the short-circuit current and the open-circuit voltage, resulting in a 10-fold enhancement of the overall conversion efficiency. Further increasing the number of wells leads to carrier collection losses due to an incomplete depletion of the active region. Capacitance-voltage measurements point to a hole diffusion length of 48 nm in the MQW region.

Research into the feasibility of metal- and oxide-film capacitors

NASA Technical Reports Server (NTRS)

Jorgenson, G. V.; Larson, H. W.

1973-01-01

Thin film capacitors with up to twenty-two active layers have been deposited by RF sputtering. The materials were aluminum electrodes of 1200 to 1500 angstrom thickness and silica dielectric layers of 3000 to 6000 angstrom thickness. The best electrical characteristics were capacitances of nearly 0.1 microfarad for an active area of 1.25 square centimeters, dissipation factor of less than 0.01 over a frequency range of 0.5 to 100 kilohertz and energy density of approximately 70 millijoules per cubic centimeter of active deposited material at a working voltage of 40 volts. These aluminum-silica capacitors exhibit excellent electrical stability over a temperature range from -55 C to +300 C.

Supercapacitors incorporating hollow cobalt sulfide hexagonal nanosheets

NASA Astrophysics Data System (ADS)

Yang, Zusing; Chen, Chia-Ying; Chang, Huan-Tsung

We have prepared hollow cobalt sulfide (CoS) hexagonal nanosheets (HNSs) from Co(NO 3) 2 and thioacetamide in the presence of poly(vinylpyrrolidone) (PVP) at 100 °C under alkaline condition. The as-prepared hollow CoS HNSs have an average edge length ca. 110 ± 27 nm and an outer shell of 16 ± 4 nm in thickness from 500 counts. The CoS HNSs are deposited onto transparent fluorine-doped tin oxide (FTO) substrates through a drop-dry process to prepare two types of supercapacitors (SCs); high rate and large per-area capacitance. The electrolyte used in this study is KOH (aq). The CoS HNSs (8 μg cm -2) electrodes exhibit excellent capacity properties, including high energy density (13.2 h kg -1), power density (17.5 kW kg -1), energy deliverable efficiency (81.3-85.3%), and stable cycle life (over 10,000 cycles) at a high discharge current density of 64.6 A g -1. With their fast charging and discharging rates (<3 s), the CoS HNSs show characteristics of high-rate SCs. The CoS HNS SCs having high mass loading (9.7 mg cm -2) provide high per-area capacitance of 1.35 F cm -2 and per-mass capacitance of 138 F g -1, respectively, showing characteristics of SCs with large per-area capacitance. Our results have demonstrated the potential of the CoS HNS electrodes hold great practical potential in many fields such as automobile and computer industries.

Synthesis and loading-dependent characteristics of nitrogen-doped graphene foam/carbon nanotube/manganese oxide ternary composite electrodes for high performance supercapacitors.

PubMed

Cheng, Tao; Yu, Baozhi; Cao, Linli; Tan, Huiyun; Li, Xinghua; Zheng, Xinliang; Li, Weilong; Ren, Zhaoyu; Bai, Jinbo

2017-09-01

The ternary composite electrodes, nitrogen-doped graphene foam/carbon nanotube/manganese dioxide (NGF/CNT/MnO 2 ), have been successfully fabricated via chemical vapor deposition (CVD) and facile hydrothermal method. The morphologies of the MnO 2 nanoflakes presented the loading-dependent characteristics and the nanoflake thickness could also be tuned by MnO 2 mass loading in the fabrication process. The correlation between their morphology and electrochemical performance was systematically investigated by controlling MnO 2 mass loading in the ternary composite electrodes. The electrochemical properties of the flexible ternary electrode (MnO 2 mass loading of 70%) exhibited a high areal capacitance of 3.03F/cm 2 and a high specific capacitance of 284F/g at the scan rate of 2mV/s. Moreover, it was interesting to find that the capacitance of the NGF/CNT/MnO 2 composite electrodes showed a 51.6% increase after 15,000 cycles. The gradual increase in specific capacitance was due to the formation of defective regions in the MnO 2 nanostructures during the electrochemical cycles of the electrodes, which further resulted in increased porosity, surface area, and consequently increased electrochemical capacity. This work demonstrates a rarely reported conclusion about loading-dependent characteristics for the NGF/CNT/MnO 2 ternary composite electrodes. It will bring new perspectives on designing novel ternary or multi-structure for various energy storage applications. Copyright © 2017 Elsevier Inc. All rights reserved.

Electrical transport and capacitance characteristics of metal-insulator-metal structures using hexagonal and cubic boron nitride films as dielectrics

NASA Astrophysics Data System (ADS)

Teii, Kungen; Kawamoto, Shinsuke; Fukui, Shingo; Matsumoto, Seiichiro

2018-04-01

Metal-insulator-metal capacitor structures using thick hexagonal and cubic boron nitride (hBN and cBN) films as dielectrics are produced by plasma jet-enhanced chemical vapor deposition, and their electrical transport and capacitance characteristics are studied in a temperature range of 298 to 473 K. The resistivity of the cBN film is of the order of 107 Ω cm at 298 K, which is lower than that of the hBN film by two orders of magnitude, while it becomes the same order as the hBN film above ˜423 K. The dominant current transport mechanism at high fields (≥1 × 104 V cm-1) is described by the Frenkel-Poole emission and thermionic emission models for the hBN and cBN films, respectively. The capacitance of the hBN film remains stable for a change in alternating-current frequency and temperature, while that of the cBN film has variations of at most 18%. The dissipation factor as a measure of energy loss is satisfactorily low (≤5%) for both films. The origin of leakage current and capacitance variation is attributed to a high defect density in the film and a transition interlayer between the substrate and the film, respectively. This suggests that cBN films with higher crystallinity, stoichiometry, and phase purity are potentially applicable for dielectrics like hBN films.

A novel source-drain follower for monolithic active pixel sensors

NASA Astrophysics Data System (ADS)

Gao, C.; Aglieri, G.; Hillemanns, H.; Huang, G.; Junique, A.; Keil, M.; Kim, D.; Kofarago, M.; Kugathasan, T.; Mager, M.; Marin Tobon, C. A.; Martinengo, P.; Mugnier, H.; Musa, L.; Lee, S.; Reidt, F.; Riedler, P.; Rousset, J.; Sielewicz, K. M.; Snoeys, W.; Sun, X.; Van Hoorne, J. W.; Yang, P.

2016-09-01

Monolithic active pixel sensors (MAPS) receive interest in tracking applications in high energy physics as they integrate sensor and readout electronics in one silicon die with potential for lower material budget and cost, and better performance. Source followers (SFs) are widely used for MAPS readout: they increase charge conversion gain 1/Ceff or decrease the effective sensing node capacitance Ceff because the follower action compensates part of the input capacitance. Charge conversion gain is critical for analog power consumption and therefore for material budget in tracking applications, and also has direct system impact. This paper presents a novel source-drain follower (SDF), where both source and drain follow the gate potential improving charge conversion gain. For the inner tracking system (ITS) upgrade of the ALICE experiment at CERN, low material budget is a primary requirement. The SDF circuit was studied as part of the effort to optimize the effective capacitance of the sensing node. The collection electrode, input transistor and routing metal all contribute to Ceff. Reverse sensor bias reduces the collection electrode capacitance. The novel SDF circuit eliminates the contribution of the input transistor to Ceff, reduces the routing contribution if additional shielding is introduced, provides a way to estimate the capacitance of the sensor itself, and has a voltage gain closer to unity than the standard SF. The SDF circuit has a somewhat larger area with a somewhat smaller bandwidth, but this is acceptable in most cases. A test chip, manufactured in a 180 nm CMOS image sensor process, implements small prototype pixel matrices in different flavors to compare the standard SF to the novel SF and to the novel SF with additional shielding. The effective sensing node capacitance was measured using a 55Fe source. Increasing reverse substrate bias from -1 V to -6 V reduces Ceff by 38% and the equivalent noise charge (ENC) by 22% for the standard SF. The SDF provides a further 9% improvement for Ceff and 25% for ENC. The SDF circuit with additional shielding provides 18% improvement for Ceff, and combined with -6 V reverse bias yields almost a factor 2.

Equivalent circuit-based analysis of CMUT cell dynamics in arrays.

PubMed

Oguz, H K; Atalar, Abdullah; Köymen, Hayrettin

2013-05-01

Capacitive micromachined ultrasonic transducers (CMUTs) are usually composed of large arrays of closely packed cells. In this work, we use an equivalent circuit model to analyze CMUT arrays with multiple cells. We study the effects of mutual acoustic interactions through the immersion medium caused by the pressure field generated by each cell acting upon the others. To do this, all the cells in the array are coupled through a radiation impedance matrix at their acoustic terminals. An accurate approximation for the mutual radiation impedance is defined between two circular cells, which can be used in large arrays to reduce computational complexity. Hence, a performance analysis of CMUT arrays can be accurately done with a circuit simulator. By using the proposed model, one can very rapidly obtain the linear frequency and nonlinear transient responses of arrays with an arbitrary number of CMUT cells. We performed several finite element method (FEM) simulations for arrays with small numbers of cells and showed that the results are very similar to those obtained by the equivalent circuit model.

30 CFR 75.1904 - Underground diesel fuel tanks and safety cans.

Code of Federal Regulations, 2011 CFR

2011-07-01

...— (1) Have steel walls of a minimum 3/16-inch thickness, or walls made of other metal of a thickness that provides equivalent strength; (2) Be protected from corrosion; (3) Be of seamless construction or...

30 CFR 75.1904 - Underground diesel fuel tanks and safety cans.

Code of Federal Regulations, 2014 CFR

2014-07-01

...— (1) Have steel walls of a minimum 3/16-inch thickness, or walls made of other metal of a thickness that provides equivalent strength; (2) Be protected from corrosion; (3) Be of seamless construction or...

30 CFR 75.1904 - Underground diesel fuel tanks and safety cans.

Code of Federal Regulations, 2012 CFR

2012-07-01

...— (1) Have steel walls of a minimum 3/16-inch thickness, or walls made of other metal of a thickness that provides equivalent strength; (2) Be protected from corrosion; (3) Be of seamless construction or...

30 CFR 75.1904 - Underground diesel fuel tanks and safety cans.

Code of Federal Regulations, 2013 CFR

2013-07-01

...— (1) Have steel walls of a minimum 3/16-inch thickness, or walls made of other metal of a thickness that provides equivalent strength; (2) Be protected from corrosion; (3) Be of seamless construction or...

Reproducibility of Spectral Domain Optical Coherence Tomography Retinal Thickness Measurements and Conversion to Equivalent Time Domain Metrics in Diabetic Macular Edema

PubMed Central

Bressler, Susan B.; Edwards, Allison R.; Chalam, Kakarla V.; Bressler, Neil M.; Glassman, Adam R.; Jaffe, Glenn J.; Melia, Michele; Saggau, David D.; Plous, Oren Z.

2014-01-01

Importance Advances in retinal imaging have led to the development of optical coherence tomography (OCT) instruments that incorporate spectral domain (SD) technology. Understanding measurement variability and relationships between retinal thickness measurements obtained on different machines is critical for proper use in clinical trials and clinical settings. Objectives Evaluate reproducibility of retinal thickness measurements from OCT images obtained by time domain (TD) (Zeiss Stratus) and SD (Zeiss Cirrus and Heidelberg Spectralis) instruments and formulate equations to convert retinal thickness measurements from SD-OCT to equivalent values on TD-OCT. Design Cross-sectional observational study. Each study eye underwent two replicate Stratus scans followed by two replicate Cirrus or Spectralis (real time image registration utilized) scans centered on the fovea. Setting Private and institutional practices Participants Diabetic persons with at least one eye with central-involved diabetic macular edema (DME), defined as Stratus central subfield thickness (CST)≥250μm. An additional normative cohort, individuals with diabetes but without DME, was enrolled. Main Outcome Measure(s) OCT CST and macular volume Results The Bland-Altman coefficient of repeatability for relative change in CST (the degree of change that could be expected from measurement variability) was lower on Spectralis compared with Stratus and Cirrus scans (7%, 12–15%, and 14%, respectively). For each cohort, the initial Stratus CST was within 10% of the replicate Stratus measurement 92% of the time; the conversion equations predicted a Stratus CST within 10% of the observed thickness 86% and 89% of the time for Stratus/Cirrus and Stratus/Spectralis groups, respectively. The Bland-Altman limits of agreement for relative change in CST between machines (the degree of change that could be expected from measurement variability, combined within and between instrument variability) were 21% for Cirrus and 19% for Spectralis, comparing predicted versus actual Stratus measurement. Conclusions and Relevance Reproducibility appears better on Spectralis than Cirrus and Stratus. Conversion equations to transform Cirrus or Spectralis measurements to Stratus-equivalent values, within 10% of the observed Stratus thickness values, appear feasible. CST changes beyond 10% when using the same machine or 20% when switching machines, after conversion to Stratus equivalents, are likely due to a change in retinal thickness and not measurement error. PMID:25058482

Analysis of x-ray diffraction pattern and complex plane impedance plot of polypyrrole/titanium dioxide nanocomposite: A simulation study

NASA Astrophysics Data System (ADS)

Ravikiran, Y. T.; Vijaya Kumari, S. C.

2013-06-01

To innovate the properties of Polypyrrole/Titanium dioxide (PPy/TiO2) nanocomposite further, it has been synthesized by chemical polymerization technique. The nanostructure and monoclinic phase of the prepared composite have been confirmed by simulating the X-ray diffraction pattern (XRD). Also, complex plane impedance plot of the composite has been simulated to find equivalent resistance capacitance circuit (RC circuit) and numerical values of R and C have been predicted.

Exploring New Command and Control Concepts and Capabilities (Exploration de Nouveaux Concepts de Commandement et Controle et de Leurs Capacites)

DTIC Science & Technology

2007-04-01

Anthropology Genetics, Physiology Cognition Knowledge Skills IndividualI i i l Team Personality & Values Dynamic Factors & Behaviors Organizational...better support that group, one should therefore have an eye upon the flow of benefits to the right. The four uses relating to learning more about C2 are...from the scenario evolution discussion outlines above and coloured blue in the figure) with the Reference Model equivalent variables and linkages

Equivalent-Continuum Modeling of Nano-Structured Materials

NASA Technical Reports Server (NTRS)

Odegard, Gregory M.; Gates, Thomas S.; Nicholson, Lee M.; Wise, Kristopher E.

2001-01-01

A method has been developed for modeling structure-property relationships of nano-structured materials. This method serves as a link between computational chemistry and solid mechanics by substituting discrete molecular structures with an equivalent-continuum model. It has been shown that this substitution may be accomplished by equating the vibrational potential energy of a nano-structured material with the strain energy of representative truss and continuum models. As an important example with direct application to the development and characterization of single-walled carbon nanotubes, the model has been applied to determine the effective continuum geometry of a graphene sheet. A representative volume element of the equivalent-continuum model has been developed with an effective thickness. This effective thickness has been shown to be similar to, but slightly smaller than, the interatomic spacing of graphite.

Macroscopic fibres of CNTs as electrodes for multifunctional electric double layer capacitors: from quantum capacitance to device performance.

PubMed

Senokos, E; Reguero, V; Palma, J; Vilatela, J J; Marcilla, Rebeca

2016-02-14

In this work we present a combined electrochemical and mechanical study of mesoporous electrodes based on CNT fibres in the context of electric double layer capacitors. We show that through control of the synthetic and assembly processes of the fibres, it is possible to obtain an active material that combines a surface area of 250 m(2) g(-1), high electrical conductivity (3.5 × 10(5) S m(-1)) and mechanical properties in the high-performance range including toughness (35 J g(-1)) comparable to that of aramid fibre (e.g. Kevlar). These properties are a consequence of the predominant orientation of the CNTs, observed by wide- and small-angle X-ray diffraction, and to the exceptionally long CNT length on the millimetre scale. Cyclic voltammetry measurements in a three-electrode configuration and using 1-butyl-3-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide (PYR14TFSI) ionic liquid electrolyte, show that the CNT fibres have a large quantum capacitance, evidenced by the near linear dependence of geometric capacitance (and conductivity) on potential bias. This reflects the low dimensionality of the CNT building blocks, which were purposely synthesised to have 1-5 layers and a high degree of graphitization. From the charge-discharge measurements of supercapacitor devices with symmetric CNT fibre electrodes we obtain power and energy densities as high as 58 kW kg(-1) and 14 Wh kg(-1), respectively. These record-high values for CNT fibre-based supercapacitors, are a consequence of the low equivalent series resistance due to the high conductivity of the fibres, the large contribution from quantum capacitance, and the wide stability window of the ionic liquid (3.5 V). Cycle life experiments demonstrate stable capacitance and energy retention over 10,000 cycles of charge-discharge at 3.5 V.

Roles of epsilon-near-zero (ENZ) and mu-near-zero (MNZ) materials in optical metatronic circuit networks.

PubMed

Abbasi, Fereshteh; Engheta, Nader

2014-10-20

The concept of metamaterial-inspired nanocircuits, dubbed metatronics, was introduced in [Science 317, 1698 (2007); Phys. Rev. Lett. 95, 095504 (2005)]. It was suggested how optical lumped elements (nanoelements) can be made using subwavelength plasmonic or non-plasmonic particles. As a result, the optical metatronic equivalents of a number of electronic circuits, such as frequency mixers and filters, were suggested. In this work we further expand the concept of electronic lumped element networks into optical metatronic circuits and suggest a conceptual model applicable to various metatronic passive networks. In particular, we differentiate between the series and parallel networks using epsilon-near-zero (ENZ) and mu-near-zero (MNZ) materials. We employ layered structures with subwavelength thicknesses for the nanoelements as the building blocks of collections of metatronic networks. Furthermore, we explore how by choosing the non-zero constitutive parameters of the materials with specific dispersions, either Drude or Lorentzian dispersion with suitable parameters, capacitive and inductive responses can be achieved in both series and parallel networks. Next, we proceed with the one-to-one analogy between electronic circuits and optical metatronic filter layered networks and justify our analogies by comparing the frequency response of the two paradigms. Finally, we examine the material dispersion of near-zero relative permittivity as well as other physically important material considerations such as losses.

DIRECTIONAL COUPLERS

DOEpatents

Nigg, D.J.

1961-12-01

A directional coupler of small size is designed. Stripline conductors of non-rectilinear configuration, and separated from each other by a thin dielectric spacer. cross each other at least at two locations at right angles, thus providing practically pure capacitive coupling which substantially eliminates undesirable inductive coupling. The conductors are sandwiched between a pair of ground planes. The coupling factor is dependent only on the thickness and dielectric constant of the dielectric spacer at the point of conductor crossover. (AEC)

The platinum microelectrode/Nafion interface - An electrochemical impedance spectroscopic analysis of oxygen reduction kinetics and Nafion characteristics

NASA Technical Reports Server (NTRS)

Parthasarathy, Arvind; Dave, Bhasker; Srinivasan, Supramaniam; Appleby, John A.; Martin, Charles R.

1992-01-01

The objectives of this study were to use electrochemical impedance spectroscopy (EIS) to study the oxygen-reduction reaction under lower humidification conditions than previously studied. The EIS technique permits the discrimination of electrode kinetics of oxygen reduction, mass transport of O2 in the membrane, and the electrical characteristics of the membrane. Electrode-kinetic parameters for the oxygen-reduction reaction, corrosion current densities for Pt, and double-layer capacitances were calculated. The production of water due to electrochemical reduction of oxygen greatly influenced the EIS response and the electrode kinetics at the Pt/Nafion interface. From the finite-length Warburg behavior, a measure of the diffusion coefficient of oxygen in Nafion and diffusion-layer thickness was obtained. An analysis of the EIS data in the high-frequency domain yielded membrane and interfacial characteristics such as ionic conductivity of the membrane, membrane grain-boundary capacitance and resistance, and uncompensated resistance.

A carrier-based analytical theory for negative capacitance symmetric double-gate field effect transistors and its simulation verification

NASA Astrophysics Data System (ADS)

Jiang, Chunsheng; Liang, Renrong; Wang, Jing; Xu, Jun

2015-09-01

A carrier-based analytical drain current model for negative capacitance symmetric double-gate field effect transistors (NC-SDG FETs) is proposed by solving the differential equation of the carrier, the Pao-Sah current formulation, and the Landau-Khalatnikov equation. The carrier equation is derived from Poisson’s equation and the Boltzmann distribution law. According to the model, an amplified semiconductor surface potential and a steeper subthreshold slope could be obtained with suitable thicknesses of the ferroelectric film and insulator layer at room temperature. Results predicted by the analytical model agree well with those of the numerical simulation from a 2D simulator without any fitting parameters. The analytical model is valid for all operation regions and captures the transitions between them without any auxiliary variables or functions. This model can be used to explore the operating mechanisms of NC-SDG FETs and to optimize device performance.

Morphology, Structural and Dielectric Properties of Vacuum Evaporated V2O5 Thin Films

NASA Astrophysics Data System (ADS)

Sengodan, R.; Shekar, B. Chandar; Sathish, S.

Vanadium pentoxide (V2O5) thin films were deposited on well cleaned glass substrate using evaporation technique under the pressure of 10-5 Torr. The thickness of the films was measured by the multiple beam interferometry technique and cross checked by using capacitance method. Metal-Insulator-Metal (MIM) structure was fabricated by using suitable masks to study dielectric properties. The dielectric properties were studied by employing LCR meter in the frequency range 12 Hz to 100 kHz for various temperatures. The temperature co- efficient of permittivity (TCP), temperature co-efficient of capacitance (TCC) and dielectric constant (ɛ) were calculated. The activation energy was calculated and found to be very low. The activation energy was found to be increasing with increase in frequency. The obtained low value of activation energy suggested that the hopping conduction may be due to electrons rather than ions.

An equivalent source model of the satellite-altitude magnetic anomaly field over Australia

NASA Technical Reports Server (NTRS)

Mayhew, M. A.; Johnson, B. D.; Langel, R. A.

1980-01-01

The low-amplitude, long-wavelength magnetic anomaly field measured between 400 and 700 km elevation over Australia by the POGO satellites is modeled by means of the equivalent source technique. Magnetic dipole moments are computed for a latitude-longitude array of dipole sources on the earth's surface such that the dipoles collectively give rise to a field which makes a least squares best fit to that observed. The distribution of magnetic moments is converted to a model of apparent magnetization contrast in a layer of constant (40 km) thickness, which contains information equivalent to the lateral variation in the vertical integral of magnetization down to the Curie isotherm and can be transformed to a model of variable thickness magnetization. It is noted that the closest equivalent source spacing giving a stable solution is about 2.5 deg, corresponding to about half the mean data elevation, and that the magnetization distribution correlates well with some of the principle tectonic elements of Australia.

Interocular symmetry in macular choroidal thickness in children.

PubMed

Al-Haddad, Christiane; El Chaar, Lama; Antonios, Rafic; El-Dairi, Mays; Noureddin, Baha'

2014-01-01

Objective. To report interocular differences in choroidal thickness in children using spectral domain optical coherence tomography (SD-OCT) and correlate findings with biometric data. Methods. This observational cross-sectional study included 91 (182 eyes) healthy children aged 6 to 17 years with no ocular abnormality except refractive error. After a comprehensive eye exam and axial length measurement, high definition macular scans were performed using SD-OCT. Two observers manually measured the choroidal thickness at the foveal center and at 1500 µm nasally, temporally, inferiorly, and superiorly. Interocular differences were computed; correlations with age, gender, refractive error, and axial length were performed. Results. Mean age was 10.40 ± 3.17 years; mean axial length and refractive error values were similar between fellow eyes. There was excellent correlation between the two observers' measurements. No significant interocular differences were observed at any location. There was only a trend for right eyes to have higher values in all thicknesses, except the superior thickness. Most of the choroidal thickness measurements correlated positively with spherical equivalent but not with axial length, age, or gender. Conclusion. Choroidal thickness measurements in children as performed using SD-OCT revealed a high level of interobserver agreement and consistent interocular symmetry. Values correlated positively with spherical equivalent refraction.

Fabrication and characterization of Al{sub 2}O{sub 3} /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Ruiying, E-mail: ryzhang2008@sinano.ac.cn; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 China; Zhu, Jian

2015-12-15

We report on our fabrication and characterization of Al{sub 2}O{sub 3}/Si composite nanodome (CND) structures, which is composed of Si nanodome structures with a conformal cladding Al{sub 2}O{sub 3} layer to evaluate its optical and electrical performance when it is applied to thin film solar cells. It has been observed that by application of Al{sub 2}O{sub 3}thin film coating using atomic layer deposition (ALD) to the Si nanodome structures, both optical and electrical performances are greatly improved. The reflectivity of less than 3% over the wavelength range of from 200 nm to 2000 nm at an incident angle from 0°more » to 45° is achieved when the Al{sub 2}O{sub 3} film is 90 nm thick. The ultimate efficiency of around 27% is obtained on the CND textured 2 μm-thick Si solar cells, which is compared to the efficiency of around 25.75% and 15% for the 2 μm-thick Si nanodome surface-decorated and planar samples respectively. Electrical characterization was made by using CND-decorated MOS devices to measure device’s leakage current and capacitance dispersion. It is found the electrical performance is sensitive to the thickness of the Al{sub 2}O{sub 3} film, and the performance is remarkably improved when the dielectric layer thickness is 90 nm thick. The leakage current, which is less than 4x10{sup −9} A/cm{sup 2} over voltage range of from -3 V to 3 V, is reduced by several orders of magnitude. C-V measurements also shows as small as 0.3% of variation in the capacitance over the frequency range from 10 kHz to 500 kHz, which is a strong indication of surface states being fully passivated. TEM examination of CND-decorated samples also reveals the occurrence of SiO{sub x} layer formed between the interface of Si and the Al{sub 2}O{sub 3} film, which is thin enough that ensures the presence of field-effect passivation, From our theoretical and experimental study, we believe Al{sub 2}O{sub 3} coated CND structures is a truly viable approach to achieving higher device efficiency.« less

A network thermodynamic two-port element to represent the coupled flow of salt and current. Improved alternative for the equivalent circuit.

PubMed Central

Mikulecky, D C

1979-01-01

A two-port for coupled salt and current flow is created by using the network thermodynamic approach in the same manner as that for coupled solute and volume flow (Mikulecky et al., 1977b; Mikulecky, 1977). This electrochemical two-port has distinct advantages over the equivalent circuit representation and overcomes difficulties pointed out by Finkelstein and Mauro (1963). The electrochemical two-port is used to produce a schematic diagram of the coupled flows through a tissue. The network is superimposable on the tissue morphology and preserves the physical qualities of the flows and forces in each part of an organized structure (e.g., an epithelium). The topological properties are manipulated independently from the constitutive (flow-force) relations. The constitutive relations are chosen from a number of alternatives depending on the detail and rigor desired. With the topology and constitutive parameters specified, the steady-state behavior is simulated with a network simulation program. By using capacitance to represent the filling and depletion of compartments, as well as the traditional electrical capacitances, time-dependent behavior is also simulated. Nonlinear effects arising from the integration of equations describing local behavior (e.g., the Nernst-Planck equations) are dealt with explicitly. The network thermodynamic approach provides a simple, straightforward method for representing a system diagrammatically and then simulating the system's behavior from the diagram with a minimum of mathematical manipulation. PMID:262391

Investigation of Electrostatic Accelerometer in HUST for Space Science Missions

NASA Astrophysics Data System (ADS)

Bai, Yanzheng; Hu, Ming; Li, Gui; Liu, Li; Qu, Shaobo; Wu, Shuchao; Zhou, Zebing

2014-05-01

High-precision electrostatic accelerometers are significant payload in CHAMP, GRACE and GOCE gravity missions to measure the non-gravitational forces. In our group, space electrostatic accelerometer and inertial sensor based on the capacitive sensors and electrostatic control technique has been investigated for space science research in China such as testing of equivalence principle (TEPO), searching non-Newtonian force in micrometer range, satellite Earth's field recovery and so on. In our group, a capacitive position sensor with a resolution of 10-7pF/Hz1/2 and the μV/Hz1/2 level electrostatic actuator are developed. The fiber torsion pendulum facility is adopt to measure the parameters of the electrostatic controlled inertial sensor such as the resolution, and the electrostatic stiffness, the cross couple between different DOFs. Meanwhile, high voltage suspension and free fall methods are applied to verify the function of electrostatic accelerometer. Last, the engineering model of electrostatic accelerometer has been developed and tested successfully in space and preliminary results are present.

Study on the water flooding in the cathode of direct methanol fuel cells.

PubMed

Im, Hun Suk; Kim, Sang-Kyung; Lim, Seongyop; Peck, Dong-Hyun; Jung, Doohwan; Hong, Won Hi

2011-07-01

Water flooding phenomena in the cathode of direct methanol fuel cells were analyzed by using electrochemical impedance spectroscopy. Two kinds of commercial gas diffusion layers with different PTFE contents of 5 wt% (GDL A5) and 20 wt% (GDL B20) were used to investigate the water flooding under various operating conditions. Water flooding was divided into two types: catalyst flooding and backing flooding. The cathode impedance spectra of each gas diffusion layer was obtained and compared under the same conditions. The diameter of the capacitive semicircle became larger with increasing current density for both, and this increase was greater for GDL B20 than GDL A5. Catalyst flooding is dominant and backing flooding is negligible when the air flow rate is high and current density is low. An equivalent model was suggested and fitted to the experimental data. Parameters for catalyst flooding and backing flooding were individually obtained. The capacitance of the catalyst layer decreases as the air flow rate decreases when the catalyst flooding is dominant.

Time constant determination for electrical equivalent of biological cells

NASA Astrophysics Data System (ADS)

Dubey, Ashutosh Kumar; Dutta-Gupta, Shourya; Kumar, Ravi; Tewari, Abhishek; Basu, Bikramjit

2009-04-01

The electric field interactions with biological cells are of significant interest in various biophysical and biomedical applications. In order to study such important aspect, it is necessary to evaluate the time constant in order to estimate the response time of living cells in the electric field (E-field). In the present study, the time constant is evaluated by considering the hypothesis of electrical analog of spherical shaped cells and assuming realistic values for capacitance and resistivity properties of cell/nuclear membrane, cytoplasm, and nucleus. In addition, the resistance of cytoplasm and nucleoplasm was computed based on simple geometrical considerations. Importantly, the analysis on the basis of first principles shows that the average values of time constant would be around 2-3 μs, assuming the theoretical capacitance values and the analytically computed resistance values. The implication of our analytical solution has been discussed in reference to the cellular adaptation processes such as atrophy/hypertrophy as well as the variation in electrical transport properties of cellular membrane/cytoplasm/nuclear membrane/nucleoplasm.

Fabrication and analysis of radiofrequency MEMS series capacitive single-pole double-throw switch

NASA Astrophysics Data System (ADS)

Bansal, Deepak; Bajpai, Anuroop; Kumar, Prem; Kaur, Maninder; Rangra, Kamaljit

2016-10-01

A compact radiofrequency (RF) MEMS single-pole double-throw (SPDT) switch based on series capacitive configuration is proposed. The critical process parameters are analyzed to improve the fabrication process. A technique of cold-hot thermal shock for lift-off method is explored. The residual stress in the structure is quantified by lancet test structures that come out to be 51 MPa. Effect of residual stress on actuation voltage is explored, which changes its value from 24 to 22 V. Resonance frequency and switching speed of the switch are 11 kHz and 44 μs, respectively, measured using laser Doppler vibrometer. Measured bandwidth of the SPDT switch is 20 GHz (5 to 25 GHz), which is verified with finite element method simulations in high frequency structure simulator©; and an equivalent LCR circuit in advanced design system©;. Insertion loss of the switch lies in -0.1 to -0.5 dB with isolation better than -20 dB for the above-mentioned bandwidth.

Effects of equivalence ratio variation on lean, stratified methane-air laminar counterflow flames

NASA Astrophysics Data System (ADS)

Richardson, E. S.; Granet, V. E.; Eyssartier, A.; Chen, J. H.

2010-11-01

The effects of equivalence ratio variations on flame structure and propagation have been studied computationally. Equivalence ratio stratification is a key technology for advanced low emission combustors. Laminar counterflow simulations of lean methane-air combustion have been presented which show the effect of strain variations on flames stabilized in an equivalence ratio gradient, and the response of flames propagating into a mixture with a time-varying equivalence ratio. 'Back supported' lean flames, whose products are closer to stoichiometry than their reactants, display increased propagation velocities and reduced thickness compared with flames where the reactants are richer than the products. The radical concentrations in the vicinity of the flame are modified by the effect of an equivalence ratio gradient on the temperature profile and thermal dissociation. Analysis of steady flames stabilized in an equivalence ratio gradient demonstrates that the radical flux through the flame, and the modified radical concentrations in the reaction zone, contribute to the modified propagation speed and thickness of stratified flames. The modified concentrations of radical species in stratified flames mean that, in general, the reaction rate is not accurately parametrized by progress variable and equivalence ratio alone. A definition of stratified flame propagation based upon the displacement speed of a mixture fraction dependent progress variable was seen to be suitable for stratified combustion. The response times of the reaction, diffusion, and cross-dissipation components which contribute to this displacement speed have been used to explain flame response to stratification and unsteady fluid dynamic strain.

Comparative study of all-printed polyimide humidity sensors with single- and multiwalled carbon nanotube gas-permeable top electrodes

NASA Astrophysics Data System (ADS)

Itoh, Eiji; Yuan, Zihan

2017-05-01

We have developed printed capacitive humidity sensors with highly gas permeable carbon nanotube top electrodes using solution techniques. The hydrophobic, porous multiwalled carbon nanotube (MWCNT) network was suitable for gas permeation, and the response of the capacitive humidity sensors was faster than that of a device with a single-walled carbon nanotube (SWCNT) top electrode. The newly developed measurement system consisting of a small measurement chamber, a computer-controlled high-speed solenoid valve, and a mass-flow controller enabled us to vary the ambient relative humidity within 0.1 s. A comparative study of the devices consisting of a 1.1-µm-thick partially fluorinated polyimide dielectric layer and an MWCNT or SWCNT top electrode revealed that the rise time (humidification process) of the device with MWCNTs (0.49 s) in the transient measurement was almost 3 times shorter than that with SWCNTs (1.48 s) owing to the hydrophobic surface of the MWCNTs. A much larger difference was observed during the drying process (recovery time) probably owing to the hydrophilic parts of the SWCNT surface. It was revealed that the response time was almost proportional to the square of the thickness of the polyimide dielectric layer, d, and the sensitivity was inversely proportional to d. The rise time decreased to 0.15 s and a sensitivity per unit area of 12.1 pF %RH-1 cm-2 was obtained in a device with 0.6-µm-thick polyimide and MWCNT top electrodes. This value is suitable for use in high-speed humidity sensors to realize a real-time humidity and breath-sensing measurement system.

High Performance and Economic Supercapacitors for Energy Storage Based on Carbon Nanomaterials

NASA Astrophysics Data System (ADS)

Samuilov, Vladimir; Farshid, Behzad; Frenkel, Alexander; Sensor CAT at Stony Brook Team

2015-03-01

We designed and manufactured very inexpensive prototypes of supercapacitors for energy storage based on carbon nanomaterials comprised of: reduced graphene oxide (RGOs) and carbon nanotubes (CNTs) as electrodes filled with polymer gel electrolytes. The electrochemical properties of supercapacitors made using these materials were compared and analyzed. A significant tradeoff between the energy density and the power density was determined; RGO electrodes demonstrated the highest energy density, while composite RGO/CNT electrodes showed the highest power density. The thickness of the RGO electrode was varied to determine its effect on the power density of the supercapacitor and results showed that with decreasing electrode thickness power density would increase. The specific capacitances of over 600 F/g were observed.

Properties of dielectric dead layers for SrTiO3 thin films on Pt electrodes

NASA Astrophysics Data System (ADS)

Finstrom, Nicholas H.; Cagnon, Joel; Stemmer, Susanne

2007-02-01

Dielectric measurements as a function of temperature were used to characterize the properties of the dielectric dead layers in parallel-plate capacitors with differently textured SrTiO3 thin films and Pt electrodes. The apparent thickness dependence of the permittivity was described with low-permittivity passive (dead) layers at the interfaces connected in series with the bulk of the SrTiO3 film. Interfacial capacitance densities changed with the film microstructure and were weakly temperature dependent. Estimates of the dielectric dead layer thickness and permittivity were limited by the film surface roughness (˜5nm ). The consequences for the possible origins of dielectric dead layers that have been proposed in the literature are discussed.

Quantifying precambrian crustal extraction: The root is the answer

USGS Publications Warehouse

Abbott, D.; Sparks, D.; Herzberg, C.; Mooney, W.; Nikishin, A.; Zhang, Y.-S.

2000-01-01

We use two different methods to estimate the total amount of continental crust that was extracted by the end of the Archean and the Proterozoic. The first method uses the sum of the seismic thickness of the crust, the eroded thickness of the crust, and the trapped melt within the lithospheric root to estimate the total crustal volume. This summation method yields an average equivalent thickness of Archean crust of 49 ?? 6 km and an average equivalent thickness of Proterozoic crust of 48 ?? 9 km. Between 7 and 9% of this crust never reached the surface, but remained within the continental root as congealed, iron-rich komatiitic melt. The second method uses experimental models of melting, mantle xenolith compositions, and corrected lithospheric thickness to estimate the amount of crust extracted through time. This melt column method reveals that the average equivalent thickness of Archean crust was 65 ?? 6 km. and the average equivalent thickness of Early Proterozoic crust was 60 ?? 7 km. It is likely that some of this crust remained trapped within the lithospheric root. The discrepancy between the two estimates is attributed to uncertainties in estimates of the amount of trapped, congealed melt, overall crustal erosion, and crustal recycling. Overall, we find that between 29 and 45% of continental crust was extracted by the end of the Archean, most likely by 2.7 Ga. Between 51 and 79% of continental crust was extracted by the end of the Early Proterozoic, most likely by 1.8-2.0 Ga. Our results are most consistent with geochemical models that call upon moderate amounts of recycling of early extracted continental crust coupled with continuing crustal growth (e.g. McLennan, S.M., Taylor, S.R., 1982. Geochemical constraints on the growth of the continental crust. Journal of Geology, 90, 347-361; Veizer, J., Jansen, S.L., 1985. Basement and sedimentary recycling - 2: time dimension to global tectonics. Journal of Geology 93(6), 625-643). Trapped, congealed, iron-rich melt within the lithospheric root may represent some of the iron that is 'missing' from the lower crust. The lower crust within Archean cratons may also have an unexpectedly low iron content because it was extracted from more primitive, undepleted mantle. (C) 2000 Elsevier Science B.V. All rights reserved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Black, Adrienne T.; Hayden, Patrick J.; Casillas, Robert P.

Sulfur mustard is a potent vesicant that induces inflammation, edema and blistering following dermal exposure. To assess molecular mechanisms mediating these responses, we analyzed the effects of the model sulfur mustard vesicant, 2-chloroethyl ethyl sulfide, on EpiDerm-FT{sup TM}, a commercially available full-thickness human skin equivalent. CEES (100-1000 {mu}M) caused a concentration-dependent increase in pyknotic nuclei and vacuolization in basal keratinocytes; at high concentrations (300-1000 {mu}M), CEES also disrupted keratin filament architecture in the stratum corneum. This was associated with time-dependent increases in expression of proliferating cell nuclear antigen, a marker of cell proliferation, and poly(ADP-ribose) polymerase (PARP) and phosphorylated histonemore » H2AX, markers of DNA damage. Concentration- and time-dependent increases in mRNA and protein expression of eicosanoid biosynthetic enzymes including COX-2, 5-lipoxygenase, microsomal PGE{sub 2} synthases, leukotriene (LT) A{sub 4} hydrolase and LTC{sub 4} synthase were observed in CEES-treated skin equivalents, as well as in antioxidant enzymes, glutathione S-transferases A1-2 (GSTA1-2), GSTA3 and GSTA4. These data demonstrate that CEES induces rapid cellular damage, cytotoxicity and inflammation in full-thickness skin equivalents. These effects are similar to human responses to vesicants in vivo and suggest that the full thickness skin equivalent is a useful in vitro model to characterize the biological effects of mustards and to develop potential therapeutics.« less

Highly flexible binder-free core-shell nanofibrous electrode for lightweight electrochemical energy storage using recycled water bottles

NASA Astrophysics Data System (ADS)

Shi, HaoTian H.; Naguib, Hani E.

2016-08-01

The creation of a novel flexible nanocomposite fiber with conductive polymer polyaniline (PAni) coating on a polyethylene terephthalate (PET) substrate allowed for increased electrochemical performance while retaining ideal mechanical properties such as very high flexibility. Binder-free PAni-wrapped PET (PAni@PET) fiber with a core-shell structure was successfully fabricated through a novel technique. The PET nanofiber substrate was fabricated through an optimized electrospinning method, while the PAni shell was chemically polymerized onto the surface of the nanofibers. The PET substrate can be made directly from recycled PETE1 grade plastic water bottles. The resulting nanofiber with an average diameter of 121 nm ± 39 nm, with a specific surface area of 83.72 m2 g-1, led to better ionic interactions at the electrode/electrolyte interface. The PAni active layer coating was found to be 69 nm in average thickness. The specific capacitance was found to have increased dramatically from pure PAni with carbon binders. The specific capacitance was found to be 347 F g-1 at a relatively high scan rate of 10 mV s-1. The PAni/PET fiber also experienced very little degradation (4.4%) in capacitance after 1500 galvanostatic charge/discharge cycles at a specific current of 1.2 A g-1. The mesoporous structure of the PAni@PET fibrous mat also allowed for tunable capacitance by controlling the pore sizes. This novel fabrication method offers insights for the utilization of recycled PETE1 based bottles as a high performance, low cost, highly flexible supercapacitor device.

A clamp fixture with interdigital capacitive sensor for in situ evaluation of wire insulation

NASA Astrophysics Data System (ADS)

Sheldon, Robert T.; Bowler, Nicola

2014-02-01

An interdigital capacitive sensor has been designed and optimized for testing aircraft wires by applying a quasinumerical model developed and reported previously. The sensor consists of two patches of interdigitated electrodes, connected by a long signal bus strip, that are intended to conform to two sides of an insulated wire. The electrodes are deposited using photolithography upon a 25.4-μm-thick Kapton® polyimide film. The two electrode patches are attached to the two jaws of a plastic spring-loaded clamp, with each jaw having a milled groove designed such that the electrodes conform to the curved surface of the insulated wire. An SMA connector and cable connect between the electrodes on the clamp and an LCR meter. Segments of pristine M5086/2 aircraft wire, each 10 cm long, were immersed in fluids commonly found in aircraft environments, to cause accelerated chemical degradation. The effects of Jet A fuel, deicing fluid, hydraulic fluid, aircraft cleaner, isopropyl alcohol and distilled water were studied. The frequency-dependent capacitance and dissipation factor of one pristine wire segment and of those degraded in the six fluid environments were measured within the frequency range 100 Hz to 1 MHz. Significant changes in capacitance and dissipation factor were observed for all degraded wires, compared with results for the pristine sample, suggesting the feasibility of detecting insulation degradation in the field. The results were also consistent with those of a similar experiment performed on sheets of Nylon 6, the material that comprises the outermost layer of M5086/2 wire.

Characterisation of Nd2O3 thick gate dielectric for silicon

NASA Astrophysics Data System (ADS)

Dakhel, A. A.

2004-03-01

Thin neodymium films were prepared by the reactive synthesis method on Si (P) substrates to form MOS devices. The oxide films were characterised by UV absorption spectroscopy, X-ray fluorescence (EDXRF) and X-ray diffraction (XRD). The ac conductance and capacitance of the devices were studied as a function of frequency in the range 100 Hz-100 kHz, of temperature in the range 293-473 K and of gate voltage. It was proved that a suitable formalism to explain the frequency dependence of the ac conductivity and capacitance of the insulator is controlled by a universal power law based on the relaxation processes of the hopping or tunnelling of the current carriers between equilibrium sites. The temperature dependence of the ac conductance at the accumulation state shows a small activation energy of about 0.07 eV for a MOS device with amorphous neodymium oxide. The temperature dependence of the accumulation capacitance for a MOS structure with crystalline neodymium oxide shows a maximum at about 390 K; such a maximum was not observed for the structure with amorphous neodymium oxide. The method of capacitance-gate voltage (C-Vg) measurements was used to investigate the effect of annealing in air and in vacuum on the surface density of states (Nss) at the insulator/semiconductor (I/S) interface. It was concluded that the density of surface states in the mid-gap increases by about five times while the density of the trapped charges in the oxide layer decreases by about eight times when the oxide crystallises into a polycrystalline structure.

Low-Voltage Electrowetting on a Lipid Bilayer Formed on Hafnium Oxide

DTIC Science & Technology

2011-06-01

currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. 1. REPORT DATE (DD-MM-YYYY) 2. REPORT TYPE 3. DATES...exceeding 10 V [9-10]. Here we report the development of electrowetting systems that do not contain solid organic dielectrics such as fluoropolymers, but...and the effective thickness ( T 𔃺 : :) of the bilayer in response to applied voltage are plotted in Fig. 3(b). The capacitance per area increased with

A Simple Sensor Model for THUNDER Actuators

NASA Technical Reports Server (NTRS)

Campbell, Joel F.; Bryant, Robert G.

2009-01-01

A quasi-static (low frequency) model is developed for THUNDER actuators configured as displacement sensors based on a simple Raleigh-Ritz technique. This model is used to calculate charge as a function of displacement. Using this and the calculated capacitance, voltage vs. displacement and voltage vs. electrical load curves are generated and compared with measurements. It is shown this model gives acceptable results and is useful for determining rough estimates of sensor output for various loads, laminate configurations and thicknesses.

Focused Ion Beam Fabrication of Microelectronic Structures

DTIC Science & Technology

1990-12-01

a simple function generator and allows fast ing, the pressure measured by the capacitance manometer is equal to the pressure at the sample surface...height above the sample ties. In practice this restricts features to simple rectangles or surface. J. Vac. . Tedhnol. B, VOL 7, No. 4, Jul/Aug IM...the sample up to 300 keV are available.(2) -3- This higher energy is often needed for implantation and for lithography in thick resist. Be++ ions at

Cell membrane causes the lipid bilayers to behave as variable capacitors: A resonance with self-induction of helical proteins.

PubMed

Monajjemi, Majid

2015-12-01

Cell membrane has a unique feature of storing biological energies in a physiologically relevant environment. This study illustrates a capacitor model of biological cell membrane including DPPC structures. The electron density profile models, electron localization function (ELF) and local information entropy have been applied to study the interaction of proteins with lipid bilayers in the cell membrane. The quantum and coulomb blockade effects of different thicknesses in the membrane have also been specifically investigated. It has been exhibited the quantum effects can appear in a small region of the free space within the membrane thickness due to the number and type of phospholipid layers. In addition, from the viewpoint of quantum effects by Heisenberg rule, it is shown the quantum tunneling is allowed in some micro positions while it is forbidden in other forms of membrane capacitor systems. Due to the dynamical behavior of the cell membrane, its capacitance is not fixed which results a variable capacitor. In presence of the external fields through protein trance membrane or ions, charges exert forces that can influence the state of the cell membrane. This causes to appear the charge capacitive susceptibility that can resonate with self-induction of helical coils; the resonance of which is the main reason for various biological pulses. Copyright © 2015 Elsevier B.V. All rights reserved.

Study of the characteristics current-voltage and capacitance-voltage in nitride GaAs Schottky diode

NASA Astrophysics Data System (ADS)

Rabehi, Abdelaziz; Amrani, Mohamed; Benamara, Zineb; Akkal, Boudali; Hatem-Kacha, Arslane; Robert-Goumet, Christine; Monier, Guillaume; Gruzza, Bernard

2015-10-01

This article reports the study of Au/GaN/GaAs Schottky diodes, where the thin GaN film is prepared by nitridation of GaAs substrates with thicknesses of 0.7 and 0.8 nm. The resulting GaN sample with thickness 0.8 nm is then treated with an annealing operation (heating to 620 °C) to improve the current transport. The current-voltage (I-V) and capacitance-voltage (C-V) of the Au/GaN/GaAs structures were investigated at room temperature. In fact, the I-V characteristics show that the annealed sample has low series resistance (Rs) and ideality factor (n) (63 Ω, 2.27 respectively) when compared to the values obtained in the untreated sample (1.83 kΩ, 3.31 respectively). The formation of the GaN layer on the gallium arsenide surface is investigated through calculation of the interface state density NSS with and without the presence of series resistance Rs. The value of the interface state density NSS(E) close to the mid-gap was estimated to be in the order of 4.7×1012 cm-2 eV-1 and 1.02× 1013 cm-2 eV-1 with and without the annealing operation, respectively. However, nitridation with the annealing operation at 620 °C improves the electrical properties of the resultant Schottky diode.

Ferroelectric HfZrOx-based MoS2 negative capacitance transistor with ITO capping layers for steep-slope device application

NASA Astrophysics Data System (ADS)

Xu, Jing; Jiang, Shu-Ye; Zhang, Min; Zhu, Hao; Chen, Lin; Sun, Qing-Qing; Zhang, David Wei

2018-03-01

A negative capacitance field-effect transistor (NCFET) built with hafnium-based oxide is one of the most promising candidates for low power-density devices due to the extremely steep subthreshold swing (SS) and high on-state current induced by incorporating the ferroelectric material in the gate stack. Here, we demonstrated a two-dimensional (2D) back-gate NCFET with the integration of ferroelectric HfZrOx in the gate stack and few-layer MoS2 as the channel. Instead of using the conventional TiN capping metal to form ferroelectricity in HfZrOx, the NCFET was fabricated on a thickness-optimized Al2O3/indium tin oxide (ITO)/HfZrOx/ITO/SiO2/Si stack, in which the two ITO layers sandwiching the HfZrOx film acted as the control back gate and ferroelectric gate, respectively. The thickness of each layer in the stack was engineered for distinguishable optical identification of the exfoliated 2D flakes on the surface. The NCFET exhibited small off-state current and steep switching behavior with minimum SS as low as 47 mV/dec. Such a steep-slope transistor is compatible with the standard CMOS fabrication process and is very attractive for 2D logic and sensor applications and future energy-efficient nanoelectronic devices with scaling power supply.

Two-Dimensional, Porous Nickel-Cobalt Sulfide for High-Performance Asymmetric Supercapacitors.

PubMed

Li, Xiaoming; Li, Qiguang; Wu, Ye; Rui, Muchen; Zeng, Haibo

2015-09-02

High specific surface area, high electrical conductivity, and abundant channels have been recognized to favor pseudocapacitors, but their realization at the same time is still a great challenge. Here, we report on nickel-cobalt sulfide nanosheets (NSs) with both ultrathin thickness and nanoscale pores for supercapacitors. The porous Ni-Co sulfide NSs were facilely synthesized through micelle-confined growth and subsequent sulfuration. The NSs are as thin as several nanometers and have a large number of pores with a mean size of ∼7 nm, resulting in ultrahigh atom ratio at surface with unique chemical and electronic structure. Therefore, fast diffusion of ions, facile transportation of electrons and high activity make great synergistic contributions to the surface-dependent reversible redox reactions. In the resulted supercapacitors, a specific capacitance of 1304 F g(-1) is achieved at a current density of 2 A g(-1) with excellent rate capability that 85.6% of the original capacitance is remained at 20 A g(-1). The effects of crystallinity and self-doping are optimized so that 93.5% of the original capacitance is obtained after 6000 cycles at a high current density of 8 A g(-1). Finally, asymmetric supercapacitors with a high energy density of 41.4 Wh/kg are achieved at a power density of 414 W/kg.

A two-axis micromachined silicon actuator with micrometer range electrostatic actuation and picometer sensitive capacitive detection

NASA Astrophysics Data System (ADS)

Ayela, F.; Bret, J. L.; Chaussy, J.; Fournier, T.; Ménégaz, E.

2000-05-01

This article presents an innovative micromachined silicon actuator. A 50-μm-thick silicon foil is anodically bonded onto a broached Pyrex substrate. A free standing membrane and four coplanar electrodes in close proximity are then lithographied and etched. The use of phosphorus doped silicon with low electrical resistivity allows the application of an electrostatic force between one electrode and the moving diaphragm. This plane displacement and the induced interelectrode variation are capacitively detected. Due to the very low electrical resistivity of the doped silicon, there is no need to metallize the vertical trenches of the device. No piezoelectric transducer takes place so that the mechanical device is free from any hysteretic or temperature dependance. The range of the possible actuation along the x and y axis is around 5 μm. The actual sensitivity is xn=0.54 Å/Hz1/2 and yn=0.14 Å/Hz1/2. The microengineering steps and the electronic setup devoted to design the actuator and to perform relative capacitive measurements ΔC/C=10-6 from an initial value C≈10-13 F are described. The elaborated tests and performances of the device are presented. As a conclusion, some experimental projects using this subnanometric sensitive device are mentioned.

Atomic Layer Deposition of Nickel on ZnO Nanowire Arrays for High-Performance Supercapacitors.

PubMed

Ren, Qing-Hua; Zhang, Yan; Lu, Hong-Liang; Wang, Yong-Ping; Liu, Wen-Jun; Ji, Xin-Ming; Devi, Anjana; Jiang, An-Quan; Zhang, David Wei

2018-01-10

A novel hybrid core-shell structure of ZnO nanowires (NWs)/Ni as a pseudocapacitor electrode was successfully fabricated by atomic layer deposition of a nickel shell, and its capacitive performance was systemically investigated. Transmission electron microscopy and X-ray photoelectron spectroscopy results indicated that the NiO was formed at the interface between ZnO and Ni where the Ni was oxidized by ZnO during the ALD of the Ni layer. Electrochemical measurement results revealed that the Ti/ZnO NWs/Ni (1500 cycles) electrode with a 30 nm thick Ni-NiO shell layer had the best supercapacitor properties including ultrahigh specific capacitance (∼2440 F g -1 ), good rate capability (80.5%) under high current charge-discharge conditions, and a relatively better cycling stability (86.7% of the initial value remained after 750 cycles at 10 A g -1 ). These attractive capacitive behaviors are mainly attributed to the unique core-shell structure and the combined effect of ZnO NW arrays as short charge transfer pathways for ion diffusion and electron transfer as well as conductive Ni serving as channel for the fast electron transport to Ti substrate. This high-performance Ti/ZnO NWs/Ni hybrid structure is expected to be one of a promising electrodes for high-performance supercapacitor applications.

Super Dielectric Material Based Capacitors: Punched Membrane/Gel

NASA Astrophysics Data System (ADS)

Petty, C. W.; Phillips, J.

2018-05-01

Extensive testing showed, as predicted, that punched membranes, filled with a gel containing aqueous salt solutions, behave as superdielectric materials (SDM). Punched membrane superdielectrics employed herein consisted of a commercial cellulose based membrane material, Celgard 16 μ thick, a material frequently used as a separator material in supercapacitors, into which macroscopic holes (ca. 2.5 mm) were punched with a laser cutter, and the holes subsequently filled with a gel-like material composed of fumed silica, NaCl and water. The gross dielectric constants measured, generally > 105, and the energy densities, > 40 J/cm3 during slow discharge, were in the range expected for superdielectric materials. The measured capacitance and energy density tracked the number of holes punched/area filled with the dielectric gel. Also, the observed power law decrease in all parameters including energy, power and capacitance, followed the same trends observed in other classes of SDM. Control studies included testing dielectrics composed of Celgard into which no holes were punched, but the SDM gel spread, also produced values consistent with the SDM model: no measurable capacitance using the standard protocol. Finally, the values measured suggest these materials rival the energy density of some common battery types at low discharge rates, and surpass the best commercial supercapacitors at low discharge rates.

Synthesis of Two-Dimensional Materials for Capacitive Energy Storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mendoza-Sánchez, Beatriz; Gogotsi, Yury

The unique properties and great variety of two-dimensional (2D) nanomaterials make them highly attractive for energy storage applications. Here, an insight into the progress made towards the application of 2D nanomaterials for capacitive energy storage is provided. Moreover, synthesis methods, and electrochemical performance of various classes of 2D nanomaterials, particularly based on graphene, transition metal oxides, dichalcogenides, and carbides, are presented. Some factors that directly influence capacitive performance are discussed throughout the text and include nanosheet composition, morphology and texture, electrode architecture, and device configuration. Recent progress in the fabrication of 2D-nanomaterials-based microsupercapacitors and flexible and free-standing supercapacitors is presented.more » The main electrode manufacturing techniques with emphasis on scalability and cost-effectiveness are discussed, and include laser scribing, printing, and roll-to-roll manufacture. Some various issues that prevent the use of the full energy-storage potential of 2D nanomaterials and how they have been tackled are discussed, and include nanosheet aggregation and the low electrical conductivity of some 2D nanomaterials. In particular, the design of hybrid and hierarchical 2D and 3D structures based on 2D nanomaterials is presented. Other challenges and opportunities are discussed and include: control of nanosheets size and thickness, chemical and electrochemical instability, and scale-up of electrode films.« less

Synthesis of Two-Dimensional Materials for Capacitive Energy Storage

DOE PAGES

Mendoza-Sánchez, Beatriz; Gogotsi, Yury

2016-06-02

The unique properties and great variety of two-dimensional (2D) nanomaterials make them highly attractive for energy storage applications. Here, an insight into the progress made towards the application of 2D nanomaterials for capacitive energy storage is provided. Moreover, synthesis methods, and electrochemical performance of various classes of 2D nanomaterials, particularly based on graphene, transition metal oxides, dichalcogenides, and carbides, are presented. Some factors that directly influence capacitive performance are discussed throughout the text and include nanosheet composition, morphology and texture, electrode architecture, and device configuration. Recent progress in the fabrication of 2D-nanomaterials-based microsupercapacitors and flexible and free-standing supercapacitors is presented.more » The main electrode manufacturing techniques with emphasis on scalability and cost-effectiveness are discussed, and include laser scribing, printing, and roll-to-roll manufacture. Some various issues that prevent the use of the full energy-storage potential of 2D nanomaterials and how they have been tackled are discussed, and include nanosheet aggregation and the low electrical conductivity of some 2D nanomaterials. In particular, the design of hybrid and hierarchical 2D and 3D structures based on 2D nanomaterials is presented. Other challenges and opportunities are discussed and include: control of nanosheets size and thickness, chemical and electrochemical instability, and scale-up of electrode films.« less

A flexible skin piloerection monitoring sensor

NASA Astrophysics Data System (ADS)

Kim, Jaemin; Seo, Dae Geon; Cho, Young-Ho

2014-06-01

We have designed, fabricated, and tested a capacitive-type flexible micro sensor for measurement of the human skin piloerection arisen from sudden emotional and environmental change. The present skin piloerection monitoring methods are limited in objective and quantitative measurement by physical disturbance stimulation to the skin due to bulky size and heavy weight of measuring devices. The proposed flexible skin piloerection monitoring sensor is composed of 3 × 3 spiral coplanar capacitor array using conductive polymer for having high capacitive density and thin enough thickness to be attached to human skin. The performance of the skin piloerection monitoring sensor is characterized using the artificial bump, representing human skin goosebump; thus, resulting in the sensitivity of -0.00252%/μm and the nonlinearity of 25.9% for the artificial goosebump deformation in the range of 0-326 μm. We also verified successive human skin piloerection having 3.5 s duration on the subject's dorsal forearms, thus resulting in the capacitance change of -6.2 fF and -9.2 fF for the piloerection intensity of 145 μm and 194 μm, respectively. It is demonstrated experimentally that the proposed sensor is capable to measure the human skin piloerection objectively and quantitatively, thereby suggesting the quantitative evaluation method of the qualitative human emotional status for cognitive human-machine interfaces applications.

Gate oxide thickness dependence of the leakage current mechanism in Ru/Ta2O5/SiON/Si structures

NASA Astrophysics Data System (ADS)

Ťapajna, M.; Paskaleva, A.; Atanassova, E.; Dobročka, E.; Hušeková, K.; Fröhlich, K.

2010-07-01

Leakage conduction mechanisms in Ru/Ta2O5/SiON/Si structures with rf-sputtered Ta2O5 with thicknesses ranging from 13.5 to 1.8 nm were systematically studied. Notable reaction at the Ru/Ta2O5 interface was revealed by capacitance-voltage measurements. Temperature-dependent current-voltage characteristics suggest the bulk-limited conduction mechanism in all metal-oxide-semiconductor structures. Under gate injection, Poole-Frenkel emission was identified as a dominant mechanism for 13.5 nm thick Ta2O5. With an oxide thickness decreasing down to 3.5 nm, the conduction mechanism transforms to thermionic trap-assisted tunnelling through the triangular barrier. Under substrate injection, the dominant mechanism gradually changes with decreasing thickness from thermionic trap-assisted tunnelling to trap-assisted tunnelling through the triangular barrier; Poole-Frenkel emission was not observed at all. A 0.7 eV deep defect level distributed over Ta2O5 is assumed to be responsible for bulk-limited conduction mechanisms and is attributed to H-related defects or oxygen vacancies in Ta2O5.

Development of SnS2/RGO nanosheet composite for cost-effective aqueous hybrid supercapacitors.

PubMed

Chauhan, Himani; Singh, Manoj K; Kumar, Praveen; Hashmi, Safir Ahmad; Deka, Sasanka

2017-01-13

The development of low cost supercapacitor cells with unique capacitive properties is essential for many domestic and industrial purposes. Here we report the first ever application of SnS 2 -reduced graphene oxide (SnS 2 /RGO) layered nanocomposite as a superior electrode material for symmetric aqueous hybrid supercapacitors. We synthesized SnS 2 /RGO nanocomposite comprised of nanosheets of SnS 2 and graphene oxide via a one-pot hydrothermal approach. in situ as-synthesized SnS 2 /RGO is devised for the first time to give high specific capacitance 500 Fg -1 , energy density 16.67 Wh kg -1 and power density 488 W kg -1 . The cell retains 95% charge/discharge cycle stability up to 1000 cycles. In-short, the SnS 2 /RGO nanosheet composite presented is a novel and advanced material for application in high stability moderate value hybrid supercapacitors. All the currently available surveys in literature state the potential applicability of SnS 2 as the anode material for reversible lithium/sodium ion batteries (LIBs/NIBs) but there is a lack of equivalent studies on electrochemical capacitors. We filled up this knowledge gap by the use of the same material in a cost-effective, highly active hybrid supercapacitor application by utilizing its pseudocapacitance property combined with the layered capacitance property of graphene sheets.

Frequency and voltage dependent electrical responses of poly(triarylamine) thin film-based organic Schottky diode

NASA Astrophysics Data System (ADS)

Anuar Mohamad, Khairul; Tak Hoh, Hang; Alias, Afishah; Ghosh, Bablu Kumar; Fukuda, Hisashi

2017-11-01

A metal-organic-metal (MOM) type Schottky diode based on poly (triarylamine) (PTAA) thin films has been fabricated by using the spin coating method. Investigation of the frequency dependent conductance-voltage (G-V-f) and capacitance-voltage (C-V-f) characteristics of the ITO/PTAA/Al MOM type diode were carried out in the frequency range from 12 Hz to 100 kHz using an LCR meter at room temperature. The frequency and bias voltage dependent electrical response were determined by admittance-based measured method in terms of an equivalent circuit model of the parallel combination of resistance and capacitance (RC circuit). Investigation revealed that the conductance is frequency and a bias voltage dependent in which conductance continuous increase as the increasing frequency, respectively. Meanwhile, the capacitance is dependent on frequency up to a certain value of frequency (100 Hz) but decreases at high frequency (1 - 10 kHz). The interface state density in the Schottky diode was determined from G-V and C-V characteristics. The interface state density has values almost constant of 2.8 x 1012 eV-1cm-2 with slightly decrease by increasing frequencies. Consequently, both series resistance and interface trap density were found to decrease with increasing frequency. The frequency dependence of the electrical responses is attributed the distribution density of interface states that could follow the alternating current (AC) signal.

Effects of surface roughening of Nafion 117 on the mechanical and physicochemical properties of ionic polymer-metal composite (IPMC) actuators

NASA Astrophysics Data System (ADS)

Wang, Yanjie; Zhu, Zicai; Liu, Jiayu; Chang, Longfei; Chen, Hualing

2016-08-01

In this paper, the surface of a Nafion membrane was roughened by the sandblasting method, mainly considering the change of sandblasting time and powder size. The roughened surfaces were characterized in terms of their topography from the confocal laser scanning microscope (CLSM) and SEM. The key surface parameters, such as Sa (the arithmetical mean deviation of the specified surface profile), SSA (the surface area ratio before and after roughening) and the area measurement on the histogram from the CLSM images, were extracted and evaluated from the roughened membranes. Also, the detailed change in surface and interfacial electrodes were measured and discussed together with the surface resistance, equivalent modulus, capacitance and performances of IPMC actuators based on the roughened membranes. The results show that a suitable sandblasting condition, resulting in the decrease in the bending stiffness and the increase in the interface area closely related to the capacitance, can effectively increase the electromechanical responses of IPMCs. Although the surface roughening by sandblasting caused a considerable lowering of mechanical strength, it was very effective for enlarging the interfacial area between Nafion membrane and the electrode layers, and for forming a penetrated electrode structure, which facilitated improvement of the surface resistance and capacitance characteristics of IPMCs. In this work, a quantitative relationship was built between the topography of Nafion membrane surface and electromechanical performance of IPMCs by means of sandblasting.

Large-scale preparation of shape controlled SnO and improved capacitance for supercapacitors: from nanoclusters to square microplates

NASA Astrophysics Data System (ADS)

Wang, Lu; Ji, Hongmei; Zhu, Feng; Chen, Zhi; Yang, Yang; Jiang, Xuefan; Pinto, João; Yang, Gang

2013-07-01

Here, we first provide a facile ultrasonic-assisted synthesis of SnO using SnCl2 and the organic solvent of ethanolamine (ETA). The moderate alkalinity of ETA and ultrasound play very important roles in the synthesis of SnO. After the hydrolysis of the intermediate of ETA-Sn(ii), the as-synthesized SnO nanoclusters undergo assembly, amalgamation, and preferential growth to microplates in hydrothermal treatment. The as-synthesized SnO was characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), ultraviolet-visible absorption spectroscopy (UV-vis) and X-ray diffraction (XRD). To explore its potential applications in energy storage, SnO was fabricated into a supercapacitor electrode and characterized by cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and galvanostatic charge-discharge measurements. The as-synthesized SnO exhibits remarkable pseudocapacitive activity including high specific capacitance (208.9 F g-1 at 0.1 A g-1), good rate capability (65.8 F g-1 at 40 A g-1), and excellent cycling stability (retention 119.3% after 10 000 cycles) for application in supercapacitors. The capacitive behavior of SnO with various crystal morphologies was observed by fitted EIS using an equivalent circuit. The novel synthetic route for SnO is a convenient and potential way to large-scale production of microplates which is expected to be applicable in the synthesis of other metal oxide nanoparticles.Here, we first provide a facile ultrasonic-assisted synthesis of SnO using SnCl2 and the organic solvent of ethanolamine (ETA). The moderate alkalinity of ETA and ultrasound play very important roles in the synthesis of SnO. After the hydrolysis of the intermediate of ETA-Sn(ii), the as-synthesized SnO nanoclusters undergo assembly, amalgamation, and preferential growth to microplates in hydrothermal treatment. The as-synthesized SnO was characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), ultraviolet-visible absorption spectroscopy (UV-vis) and X-ray diffraction (XRD). To explore its potential applications in energy storage, SnO was fabricated into a supercapacitor electrode and characterized by cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and galvanostatic charge-discharge measurements. The as-synthesized SnO exhibits remarkable pseudocapacitive activity including high specific capacitance (208.9 F g-1 at 0.1 A g-1), good rate capability (65.8 F g-1 at 40 A g-1), and excellent cycling stability (retention 119.3% after 10 000 cycles) for application in supercapacitors. The capacitive behavior of SnO with various crystal morphologies was observed by fitted EIS using an equivalent circuit. The novel synthetic route for SnO is a convenient and potential way to large-scale production of microplates which is expected to be applicable in the synthesis of other metal oxide nanoparticles. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr00951c

Linking xylem water storage with anatomical parameters in five temperate tree species.

PubMed

Jupa, Radek; Plavcová, Lenka; Gloser, Vít; Jansen, Steven

2016-06-01

The release of water from storage compartments to the transpiration stream is an important functional mechanism that provides the buffering of sudden fluctuations in water potential. The ability of tissues to release water per change in water potential, referred to as hydraulic capacitance, is assumed to be associated with the anatomy of storage tissues. However, information about how specific anatomical parameters determine capacitance is limited. In this study, we measured sapwood capacitance (C) in terminal branches and roots of five temperate tree species (Fagus sylvatica L., Picea abies L., Quercus robur L., Robinia pseudoacacia L., Tilia cordata Mill.). Capacitance was calculated separately for water released mainly from capillary (CI; open vessels, tracheids, fibres, intercellular spaces and cracks) and elastic storage compartments (CII; living parenchyma cells), corresponding to two distinct phases of the moisture release curve. We found that C was generally higher in roots than branches, with CI being 3-11 times higher than CII Sapwood density and the ratio of dead to living xylem cells were most closely correlated with C In addition, the magnitude of CI was strongly correlated with fibre/tracheid lumen area, whereas CII was highly dependent on the thickness of axial parenchyma cell walls. Our results indicate that water released from capillary compartments predominates over water released from elastic storage in both branches and roots, suggesting the limited importance of parenchyma cells for water storage in juvenile xylem of temperate tree species. Contrary to intact organs, water released from open conduits in our small wood samples significantly increased CI at relatively high water potentials. Linking anatomical parameters with the hydraulic capacitance of a tissue contributes to a better understanding of water release mechanisms and their implications for plant hydraulics. © The Author 2016. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Effect of copper phthalocyanine thickness on surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction

NASA Astrophysics Data System (ADS)

Reddy, P. R. Sekhar; Janardhanam, V.; Jyothi, I.; Harsha, Cirandur Sri; Reddy, V. Rajagopal; Lee, Sung-Nam; Won, Jonghan; Choi, Chel-Jong

2018-02-01

Effects of the thickness of copper phthalocyanine (CuPc) film (2, 5, 10, 15, 20, 30 and 40 nm) on the surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction have been investigated. The optical band gap of CuPc film was increased with increase in the thickness of the CuPc film. The electrical properties of the Au/n-Si Schottky junction and Au/CuPc/n-Si heterojunctions were characterized by current-voltage ( I-V) and capacitance-voltage ( C-V) measurements. The barrier height, ideality factor and series resistance were estimated based on the I-V, Cheung's and Norde's methods. The barrier heights increased with increasing CuPc interlayer thickness up to 15 nm and remained constant for thickness above 20 nm, associated with the incapability of the generated carriers to reach the interface. The discrepancy in the barrier heights obtained from I-V and C-V measurements indicates the presence of barrier inhomogeneity at the interface as evidenced by higher ideality factor values. It can be concluded that the electrical properties of Au/n-Si Schottky junction can be significantly altered with the variation of CuPc thickness as interlayer.

Large enhancement of capacitance driven by electrostatic image forces

NASA Astrophysics Data System (ADS)

Loth, Matthew Scott

The purpose of this thesis is to examine the role of electrostatic images in determining the capacitance and the structure of the electrostatic double layer (EDL) formed at the interface of a metal electrode and an electrolyte. Current mean field theories, and the majority of simulations, do not account for ions to form image charges in the metal electrodes and claim that the capacitance of the double layer cannot be larger than that of the Helmholtz capacitor, whose width is equal to the radius of an ion. However, in some experiments, and simulations where the images are included, the apparent width of the capacitor is substantially smaller. Monte Carlo simulations are used to examine the interface between a metal electrode and a room temperature ionic liquid (RTIL) modeled by hard spheres (the "restricted primitive model"). Image charges for each ion are included in the simulated electrode. At moderately low temperatures the capacitance of the metal/RTIL interface is so large that the effective thickness of the electrostatic double-layer is up to 3 times smaller than the ion radius. To interpret these results, an approach is used that is based on the interaction between discrete ions and their image charges, which therefore goes beyond the mean-field approximation. When a voltage is applied across the interface, the strong image attraction causes counterions to condense onto the metal surface to form compact ion-image dipoles. These dipoles repel each other to form a correlated liquid. When the surface density of these dipoles is low, the insertion of an additional dipole does not require much energy. This leads to a large capacitance C that decreases monotonically with voltage V, producing a "bell-shaped" C( V) curve. In the case of a semi-metal electrode, the finite screening radius of the electrode shifts the reflection plane for image charges to the interior of the electrode resulting in a "camel-shaped" C(V) curve, which is parabolic near V = 0, reaches a maximum and then decreases. These predictions are in qualitative agreement with experiment. A similarly simple model is employed to simulate the EDL of superionic crystals. In this case only small cations are mobile and other ions form an oppositely charged background. Simulations show an effective thickness of the EDL that may be 3 times smaller than the ion radius. The weak repulsion of ion-image dipoles again plays a central role in determining the capacitance in this theory, which is in reasonable agreement with experiment. Finally, the problem of a strongly charged, insulating macroion in a dilute solution of multivalent counterions is considered. While an ideal conductor does not exist in the problem, and no images are explicitly included, simulations demonstrate that adsorbed counterions form a strongly correlated liquid of at the surface of the macroion and acts as an effective metal surface. In fact, the surface screens the electric field of distant ions with a negative screening radius. The simulation results serve to confirm existing non-mean-field theories.

Self isolating high frequency saturable reactor

DOEpatents

Moore, James A.

1998-06-23

The present invention discloses a saturable reactor and a method for decoupling the interwinding capacitance from the frequency limitations of the reactor so that the equivalent electrical circuit of the saturable reactor comprises a variable inductor. The saturable reactor comprises a plurality of physically symmetrical magnetic cores with closed loop magnetic paths and a novel method of wiring a control winding and a RF winding. The present invention additionally discloses a matching network and method for matching the impedances of a RF generator to a load. The matching network comprises a matching transformer and a saturable reactor.

Early Results from the Advanced Radiation Protection Thick GCR Shielding Project

NASA Technical Reports Server (NTRS)

Norman, Ryan B.; Clowdsley, Martha; Slaba, Tony; Heilbronn, Lawrence; Zeitlin, Cary; Kenny, Sean; Crespo, Luis; Giesy, Daniel; Warner, James; McGirl, Natalie;

Design and verification of large-moment transmitter loops for geophysical applications

NASA Astrophysics Data System (ADS)

Sternberg, Ben K.; Dvorak, Steven L.; Feng, Wanjie

2017-01-01

In this paper we discuss the modeling, design and verification of large-moment transmitter (TX) loops for geophysical applications. We first develop two equivalent circuit models for TX loops. We show that the equivalent inductance can be predicted using one of two empirical formulas. The stray capacitance of the loop is then calculated using the measured self-resonant frequency and the loop inductance. We model the losses associated with both the skin effect and the dissipation factor in both of these equivalent circuits. We find that the two equivalent circuit models produce the same results provided that the dissipation factor is small. Next we compare the measured input impedances for three TX loops that were constructed with different wire configurations with the equivalent circuit model. We found excellent agreement between the measured and simulated results after adjusting the dissipation factor. Since the skin effect and dissipation factor yield good agreement with measurements, the proximity effect is negligible in the three TX loops that we tested. We found that the effects of the dissipation factor dominated those of the skin effect when the wires were relatively close together. When the wires were widely separated, then the skin effect was the dominant loss mechanism. We also found that loops with wider wire separations exhibited higher self-resonant frequencies and better high-frequency performance.

Resonant Rectifier ICs for Piezoelectric Energy Harvesting Using Low-Voltage Drop Diode Equivalents

PubMed Central

Din, Amad Ud; Chandrathna, Seneke Chamith; Lee, Jong-Wook

2017-01-01

Herein, we present the design technique of a resonant rectifier for piezoelectric (PE) energy harvesting. We propose two diode equivalents to reduce the voltage drop in the rectifier operation, a minuscule-drop-diode equivalent (MDDE) and a low-drop-diode equivalent (LDDE). The diode equivalents are embedded in resonant rectifier integrated circuits (ICs), which use symmetric bias-flip to reduce the power used for charging and discharging the internal capacitance of a PE transducer. The self-startup function is supported by synchronously generating control pulses for the bias-flip from the PE transducer. Two resonant rectifier ICs, using both MDDE and LDDE, are fabricated in a 0.18 μm CMOS process and their performances are characterized under external and self-power conditions. Under the external-power condition, the rectifier using LDDE delivers an output power POUT of 564 μW and a rectifier output voltage VRECT of 3.36 V with a power transfer efficiency of 68.1%. Under self-power conditions, the rectifier using MDDE delivers a POUT of 288 μW and a VRECT of 2.4 V with a corresponding efficiency of 78.4%. Using the proposed bias-flip technique, the power extraction capability of the proposed rectifier is 5.9 and 3.0 times higher than that of a conventional full-bridge rectifier. PMID:28422085

Resonant Rectifier ICs for Piezoelectric Energy Harvesting Using Low-Voltage Drop Diode Equivalents.

PubMed

Din, Amad Ud; Chandrathna, Seneke Chamith; Lee, Jong-Wook

2017-04-19

Herein, we present the design technique of a resonant rectifier for piezoelectric (PE) energy harvesting. We propose two diode equivalents to reduce the voltage drop in the rectifier operation, a minuscule-drop-diode equivalent (MDDE) and a low-drop-diode equivalent (LDDE). The diode equivalents are embedded in resonant rectifier integrated circuits (ICs), which use symmetric bias-flip to reduce the power used for charging and discharging the internal capacitance of a PE transducer. The self-startup function is supported by synchronously generating control pulses for the bias-flip from the PE transducer. Two resonant rectifier ICs, using both MDDE and LDDE, are fabricated in a 0.18 μm CMOS process and their performances are characterized under external and self-power conditions. Under the external-power condition, the rectifier using LDDE delivers an output power P OUT of 564 μW and a rectifier output voltage V RECT of 3.36 V with a power transfer efficiency of 68.1%. Under self-power conditions, the rectifier using MDDE delivers a P OUT of 288 μW and a V RECT of 2.4 V with a corresponding efficiency of 78.4%. Using the proposed bias-flip technique, the power extraction capability of the proposed rectifier is 5.9 and 3.0 times higher than that of a conventional full-bridge rectifier.

Structural, optical and ac electrical characterization of CBD synthesized NiO thin films: Influence of thickness

NASA Astrophysics Data System (ADS)

Das, M. R.; Mukherjee, A.; Mitra, P.

2017-09-01

We have studied the electrical conductivity, dielectric relaxation mechanism and impedance spectroscopy characteristics of nickel oxide (NiO) thin films synthesized by chemical bath deposition (CBD) method. Thickness dependent structural, optical and ac electrical characterization has been carried out and deposition time was varied to control the thickness. The material has been characterized using X-ray diffraction and UV-VIS spectrophotometer. Impedance spectroscopy analysis confirmed enhancement of ac conductivity and dielectric constant for films deposited with higher deposition time. Decrease of grain size in thicker films were confirmed from XRD analysis and activation energy of the material for electrical charge hopping process was increased with thickness of the film. Decrease in band gap in thicker films were observed which could be associated with creation of additional energy levels in the band gap of the material. Cole-Cole plot shows contribution of both grain and grain boundary towards total resistance and capacitance. The overall resistance was found to decrease from 14.6 × 105 Ω for 30 min deposited film ( 120 nm thick) to 2.42 × 105 Ω for 120 min deposited film ( 307 nm thick). Activation energy value to electrical conduction process evaluated from conductivity data was found to decrease with thickness. Identical result was obtained from relaxation time approach suggesting hopping mechanism of charge carriers.

Thermally stable dielectric responses in uniaxially (001)-oriented CaBi4Ti4O15 nanofilms grown on a Ca2Nb3O10- nanosheet seed layer.

PubMed

Kimura, Junichi; Takuwa, Itaru; Matsushima, Masaaki; Shimizu, Takao; Uchida, Hiroshi; Kiguchi, Takanori; Shiraishi, Takahisa; Konno, Toyohiko J; Shibata, Tatsuo; Osada, Minoru; Sasaki, Takayoshi; Funakubo, Hiroshi

2016-02-15

To realize a high-temperature capacitor, uniaxially (001)-oriented CaBi4Ti4O15 films with various film thicknesses were prepared on (100)cSrRuO3/Ca2Nb3O10(-) nanosheet/glass substrates. As the film thickness decreases to 50 nm, the out-of-plane lattice parameters decrease while the in-plane lattice ones increase due to the in-plane tensile strain. However, the relative dielectric constant (εr) at room temperature exhibits a negligible degradation as the film thickness decreases to 50 nm, suggesting that εr of (001)-oriented CaBi4Ti4O15 is less sensitive to the residual strain. The capacitance density increases monotonously with decreasing film thickness, reaching a value of 4.5 μF/cm(2) for a 50-nm-thick nanofilm, and is stable against temperature changes from room temperature to 400 °C irrespective of film thickness. This behaviour differs from that of the widely investigated perovskite-structured dielectrics. These results show that (001)-oriented CaBi4Ti4O15 films derived using Ca2Nb3O10(-) nanosheets as seed layers can be made candidates for high-temperature capacitor applications by a small change in the dielectric properties against film thickness and temperature variations.

Spontaneous cell sorting of fibroblasts and keratinocytes creates an organotypic human skin equivalent.

PubMed

Wang, C K; Nelson, C F; Brinkman, A M; Miller, A C; Hoeffler, W K

2000-04-01

We show that an inherent ability of two distinct cell types, keratinocytes and fibroblasts, can be relied upon to accurately reconstitute full-thickness human skin including the dermal-epidermal junction by a cell-sorting mechanism. A cell slurry containing both cell types added to silicone chambers implanted on the backs of severe combined immunodeficient mice sorts out to reconstitute a clearly defined dermis and stratified epidermis within 2 wk, forming a cell-sorted skin equivalent. Immunostaining of the cell-sorted skin equivalent with human cell markers showed patterns similar to those of normal full-thickness skin. We compared the cell-sorted skin equivalent model with a composite skin model also made on severe combined immunodeficient mice. The composite grafts were constructed from partially differentiated keratinocyte sheets placed on top of a dermal equivalent constructed of devitalized dermis. Electron microscopy revealed that both models formed ample numbers of normal appearing hemidesmosomes. The cell-sorted skin equivalent model, however, had greater numbers of keratin intermediate filaments within the basal keratinocytes that connected to hemidesmosomes, and on the dermal side both collagen filaments and anchoring fibril connections to the lamina densa were more numerous compared with the composite model. Our results may provide some insight into why, in clinical applications for treating burns and other wounds, composite grafts may exhibit surface instability and blistering for up to a year following grafting, and suggest the possible usefulness of the cell-sorted skin equivalent in future grafting applications.

Evaluation of Permacol as a cultured skin equivalent.

PubMed

MacLeod, T M; Cambrey, A; Williams, G; Sanders, R; Green, C J

2008-12-01

Skin loss following severe burn requires prompt wound closure to avoid such complications as fluid and electrolyte imbalance, infection, immune suppression, and pain. In clinical situations in which insufficient donor skin is available, the development of cultured skin equivalents (dermal matrices seeded with keratinocytes and fibroblasts) may provide a useful alternative. The aim of this study was to assess the suitability of a porcine-derived dermal collagen matrix (Permacol) to function as a cultured skin equivalent in supporting the growth of keratinocytes in vitro and providing cover to full thickness wounds in the BALB C/nude mouse model. A histological comparison was against Glycerol treated-Ethylene Oxide Sterilised Porcine Dermis (Gly-EO Dermis) which has successfully been used as a cultured skin equivalent in previous studies. Both Gly-EO Dermis and to a lesser extent Permacol were able to support the growth of cultured keratinocytes following a 16-day period of cell culture, however, this study was only able to demonstrate the presence of an epidermal layer on Gly-EO dermis 2 weeks after grafting onto full-thickness wounds in the BALB C/nude mouse model.

Ultrawide Shipboard Electrooptic Electromagnetic Environment Monitoring

DTIC Science & Technology

1994-05-01

ridge-waveguide modulator has a device length of 300 fpm, a waveguide thickness of 0.4 pm, a device capacitance of 0.2 pF, and a r x- 0.7. For digital ...important noise sources identified. Particular attention will be paid to the performance characteristics of the optical modulator. For digital ...1.32 tM for digital as well as analog optical link applications. The operation of the FKE modulator was discussed in Section 2.1.2 of this report. At

Effect of wrinkles on the surface area of graphene: toward the design of nanoelectronics.

PubMed

Qin, Zhao; Taylor, Michael; Hwang, Mary; Bertoldi, Katia; Buehler, Markus J

2014-11-12

Graphene has attracted intense attention to the use in extreme applications. However, its small thickness facilitates wrinkle formation, and it is not clear how such structural change affects its area-specific capacitance. Herein, we combine molecular dynamics and continuum mechanics-based simulations to study the changes in surface area induced by wrinkles. We find that the high specific surface area of graphene can only be affected up to 2% regardless of loading conditions, geometry, and defects.

New head equivalent phantom for task and image performance evaluation representative for neurovascular procedures occurring in the Circle of Willis

NASA Astrophysics Data System (ADS)

Ionita, Ciprian N.; Loughran, Brendan; Jain, Amit; Swetadri Vasan, S. N.; Bednarek, Daniel R.; Levy, Elad; Siddiqui, Adnan H.; Snyder, Kenneth V.; Hopkins, L. N.; Rudin, Stephen

2012-03-01

Phantom equivalents of different human anatomical parts are routinely used for imaging system evaluation or dose calculations. The various recommendations on the generic phantom structure given by organizations such as the AAPM, are not always accurate when evaluating a very specific task. When we compared the AAPM head phantom containing 3 mm of aluminum to actual neuro-endovascular image guided interventions (neuro-EIGI) occurring in the Circle of Willis, we found that the system automatic exposure rate control (AERC) significantly underestimated the x-ray parameter selection. To build a more accurate phantom for neuro-EIGI, we reevaluated the amount of aluminum which must be included in the phantom. Human skulls were imaged at different angles, using various angiographic exposures, at kV's relevant to neuro-angiography. An aluminum step wedge was also imaged under identical conditions, and a correlation between the gray values of the imaged skulls and those of the aluminum step thicknesses was established. The average equivalent aluminum thickness for the skull samples for frontal projections in the Circle of Willis region was found to be about 13 mm. The results showed no significant changes in the average equivalent aluminum thickness with kV or mAs variation. When a uniform phantom using 13 mm aluminum and 15 cm acrylic was compared with an anthropomorphic head phantom the x-ray parameters selected by the AERC system were practically identical. These new findings indicate that for this specific task, the amount of aluminum included in the head equivalent must be increased substantially from 3 mm to a value of 13 mm.

Theoretical and simulation analysis of piezoelectric liquid resistance captor filled with pipeline

NASA Astrophysics Data System (ADS)

Zheng, Li; Zhigang, Yang; Junwu, Kan; Lisheng; Bo, Yan; Dan, Lu

2018-03-01

This paper designs a kind of Piezoelectric liquid resistance capture energy device, by using the superposition theory of the sheet deformation, the calculation model of the displacement curve of the circular piezoelectric vibrator and the power generation capacity under the concentrated load is established. The results show that the radius ratio, thickness ratio and Young’s modulus of the circular piezoelectric vibrator have greater influence on the power generation capacity. When the material of piezoelectric oscillator is determined, the best radius ratio and thickness ratio make the power generation capacity the largest. Excessive or small radius ratio and thickness ratio will reduce the generating capacity and even generate zero power. In addition, the electromechanical equivalent model is established. Equivalent analysis is made by changing the circuit impedance. The results are consistent with the theoretical simulation results, indicating that the established circuit model can truly reflect the characteristics of the theoretical model.

High-performance supercapacitors based on hollow polyaniline nanofibers by electrospinning.

PubMed

Miao, Yue-E; Fan, Wei; Chen, Dan; Liu, Tianxi

2013-05-22

Hollow polyaniline (PANI) nanofibers with controllable wall thickness are fabricated by in situ polymerization of aniline using the electrospun poly(amic acid) fiber membrane as a template. A maximum specific capacitance of 601 F g(-1) has been achieved at 1 A g(-1), suggesting the potential application of hollow PANI nanofibers for supercapacitors. The superior electrochemical performance of the hollow nanofibers is attributed to their hollow structure, thin wall thickness, and orderly pore passages, which can drastically facilitate the ion diffusion and improve the utilization of the electroactive PANI during the charge-discharge processes. Furthermore, the high flexibility of the self-standing fiber membrane template provides possibilities for the facile construction and fabrication of conducting polymers with hollow nanostructures, which may find potential applications in various high-performance electrochemical devices.

Morphological, elemental, and optical characterization of plasma polymerized n-butyl methacrylate thin films

NASA Astrophysics Data System (ADS)

Nasrin, Rahima; Hossain, Khandker S.; Bhuiyan, A. H.

2018-05-01

Plasma polymerized n-butyl methacrylate (PPnBMA) thin films of varying thicknesses were prepared at room temperature by AC plasma polymerization system using a capacitively coupled parallel plate reactor. Field-emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), energy-dispersive X-ray (EDX) analysis, and ultraviolet-visible (UV-Vis) spectroscopic investigation have been performed to study the morphological, elemental, and optical properties of the PPnBMA thin films, respectively. The flat and defect-free nature of thin films were confirmed by FESEM and AFM images. With declining plasma power, average roughness and root mean square roughness increase. Allowed direct transition ( E gd) and indirect transition ( E gi) energy gaps were found to be 3.64-3.80 and 3.38-3.45 eV, respectively, for PPnBMA thin films of different thicknesses. Values of E gd as well as E gi increase with the increase of thickness. The extinction coefficient, Urbach energy, and steepness parameter were also determined for these thin films.

On-line monitoring of the crystallization process: relationship between crystal size and electrical impedance spectra

NASA Astrophysics Data System (ADS)

Zhao, Yanlin; Yao, Jun; Wang, Mi

2016-07-01

On-line monitoring of crystal size in the crystallization process is crucial to many pharmaceutical and fine-chemical industrial applications. In this paper, a novel method is proposed for the on-line monitoring of the cooling crystallization process of L-glutamic acid (LGA) using electrical impedance spectroscopy (EIS). The EIS method can be used to monitor the growth of crystal particles relying on the presence of an electrical double layer on the charged particle surface and the polarization of double layer under the excitation of alternating electrical field. The electrical impedance spectra and crystal size were measured on-line simultaneously by an impedance analyzer and focused beam reflectance measurement (FBRM), respectively. The impedance spectra were analyzed using the equivalent circuit model and the equivalent circuit elements in the model can be obtained by fitting the experimental data. Two equivalent circuit elements, including capacitance (C 2) and resistance (R 2) from the dielectric polarization of the LGA solution and crystal particle/solution interface, are in relation with the crystal size. The mathematical relationship between the crystal size and the equivalent circuit elements can be obtained by a non-linear fitting method. The function can be used to predict the change of crystal size during the crystallization process.

78 FR 76035 - Airworthiness Directives; Maule Aerospace Technology, Inc. Airplanes

Federal Register 2010, 2011, 2012, 2013, 2014

2013-12-16

... precision machined step wedge made of 4340 steel (or similar steel with equivalent sound velocity) or at... unless an alternative instrument calibration procedure is used to set the sound velocity. 6. Obtain a... reflection of the thick section. If the digital display does not agree with the thickest thickness, follow...

Noncontact Capacitive Clearance Control System For Laser Cutting Machines

NASA Astrophysics Data System (ADS)

Topkaya, Ahmet; Schmall, Karl-Heinz; Majoli, Ralf

1989-03-01

For a continuous high quality laser cut, it is necessary among other things to position the focal point of the laser beam correctly. This means that a constant clearance between the cutting head and the workpiece with a tolerance of +/- 0.Imm must he ensured. When cutting corrugated automobile bodysheet for example, a good quality cut can only be achieved with automatic clearance control. In the following, a method of automatic clearance control is described using the assistance of a noncontact capacitive sensor system. The copper nozzle of the laser cutting head acts as the electrode of the clearance sensor. The nozzle electrode and the workpiece build a small variable capacitance depending on the clearance. A change of clearance also changes the capacitance, which in turn influences a high frequency oscillator circuit. This shift in frequency is then converted into an analogue DC signal, which can be used to operate a servo motor control for the positioning of the laser cutting head in a closed loop servo system. Laser cutting heads with clearance sensor nozzles of different shapes, suited fur most applications in the industry, with focal lengths from 2.5" to 5" have been developed. They are capable to cut metal sheet from 0.2 to 12 mm of thickness, using CO2-lasers with output power up to 2.5 kW. For special applications involving difficult workpiece topographies in automobile production applications special "trunk" nozzles have been developed. For 5-axis cutting machines and robots, new laser cutting heads with integrated nozzle sensors in combination with a high dynamic Z-axis motor drive are in a stage of development.

Dry-Processed, Binder-Free Holey Graphene Electrodes for Supercapacitors with Ultrahigh Areal Loadings.

PubMed

Walsh, Evan D; Han, Xiaogang; Lacey, Steven D; Kim, Jae-Woo; Connell, John W; Hu, Liangbing; Lin, Yi

2016-11-02

For commercial applications, the need for smaller footprint energy storage devices requires more energy to be stored per unit area. Carbon nanomaterials, especially graphene, have been studied as supercapacitor electrodes and can achieve high gravimetric capacities affording high gravimetric energy densities. However, most nanocarbon-based electrodes exhibit a significant decrease in their areal capacitances when scaled to the high mass loadings typically used in commercially available cells (∼10 mg/cm 2 ). One of the reasons for this behavior is that the additional surface area in thick electrodes is not readily accessible by electrolyte ions due to the large tortuosity. Furthermore, the fabrication of such electrodes often involves complicated processes that limit the potential for mass production. Here, holey graphene electrodes for supercapacitors that are scalable in both production and areal capacitance are presented. The lateral surface porosity on the graphene sheets was created using a facile single-step air oxidation method, and the resultant holey graphene was compacted under ambient conditions into mechanically robust monolithic shapes that can be directly used as binder-free electrodes. In comparison, pristine graphene discs under similar binder-free compression molding conditions were extremely brittle and thus not deemed useful for electrode applications. The coin cell supercapacitors, based on these holey graphene electrodes exhibited small variations in gravimetric capacitance over a wide range of areal mass loadings (∼1-30 mg/cm 2 ) at current densities as high as 30 mA/cm 2 , resulting in the near-linear increase of the areal capacitance (F/cm 2 ) with the mass loading. The prospects of the presented method for facile binder-free ultrathick graphene electrode fabrication are discussed.

Simulations of Cyclic Voltammetry for Electric Double Layers in Asymmetric Electrolytes: A Generalized Modified Poisson-Nernst-Planck Model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Hainan; Thiele, Alexander; Pilon, Laurent

2013-11-15

This paper presents a generalized modified Poisson–Nernst–Planck (MPNP) model derived from first principles based on excess chemical potential and Langmuir activity coefficient to simulate electric double-layer dynamics in asymmetric electrolytes. The model accounts simultaneously for (1) asymmetric electrolytes with (2) multiple ion species, (3) finite ion sizes, and (4) Stern and diffuse layers along with Ohmic potential drop in the electrode. It was used to simulate cyclic voltammetry (CV) measurements for binary asymmetric electrolytes. The results demonstrated that the current density increased significantly with decreasing ion diameter and/or increasing valency |z i| of either ion species. By contrast, the ionmore » diffusion coefficients affected the CV curves and capacitance only at large scan rates. Dimensional analysis was also performed, and 11 dimensionless numbers were identified to govern the CV measurements of the electric double layer in binary asymmetric electrolytes between two identical planar electrodes of finite thickness. A self-similar behavior was identified for the electric double-layer integral capacitance estimated from CV measurement simulations. Two regimes were identified by comparing the half cycle period τ CV and the “RC time scale” τ RC corresponding to the characteristic time of ions’ electrodiffusion. For τ RC ← τ CV, quasi-equilibrium conditions prevailed and the capacitance was diffusion-independent while for τ RC → τ CV, the capacitance was diffusion-limited. The effect of the electrode was captured by the dimensionless electrode electrical conductivity representing the ratio of characteristic times associated with charge transport in the electrolyte and that in the electrode. The model developed here will be useful for simulating and designing various practical electrochemical, colloidal, and biological systems for a wide range of applications.« less

Surfactant-assisted electrochemical deposition of α-cobalt hydroxide for supercapacitors

NASA Astrophysics Data System (ADS)

Zhao, Ting; Jiang, Hao; Ma, Jan

A N-methylpyrrolidone (NMP) assisted electrochemical deposition route has been developed to realize the synthesis of a dense α-Co(OH) 2 layered structure, which is composed of nanosheets, each with a thickness of 10 nm. The capacitive characteristics of the as-obtained α-Co(OH) 2 are investigated by means of cyclic voltammetry (CV), charge/discharge characterization, and electrochemical impedance spectroscopy (EIS), in 1 M KOH electrolyte. The results indicate that α-Co(OH) 2 prepared in the presence of 20 vol.% NMP has denser and thin layered structure which promotes an increased surface area and a shortened ion diffusion path. The as-prepared α-Co(OH) 2 shows better electrochemical performance with specific capacitance of 651 F g -1 in a potential range of -0.1 to 0.45 V. These findings suggest that the surfactant-assisted electrochemical deposition is a promising process for building densely packed material systems with enhanced properties, for application in supercapacitors.

Flexible asymmetric supercapacitors based on ultrathin two-dimensional nanosheets with outstanding electrochemical performance and aesthetic property

PubMed Central

Shi, Shan; Xu, Chengjun; Yang, Cheng; Chen, Yanyi; Liu, Juanjuan; Kang, Feiyu

2013-01-01

Flexible asymmetric supercapacitors with excellent electrochemical performance and aesthetic property are realized by using ultrathin two-dimensional (2D) MnO2 and graphene nanosheets as cathode and anode materials, respectively. 2D MnO2 nanosheets (MSs) with a thickness of ca. 2 nm are synthesized with a soft template method for the first time, which achieve a high specific capacitance of 774 F g−1 even after 10000 cycles. Asymmetric supercapacitors based on ultrathin MSs and graphene exhibit a very high energy density up to 97.2 Wh kg−1 with no more than 3% capacitance loss after 10000 cycles in aqueous electrolyte. Most interestingly, we show that the energy storage device can have an aesthetic property. For instance, a “Chinese panda” supercapacitor is capable of lighting up a red light emitting diode. This work has another, quite different aspect that a supercapacitor is no longer a cold industry product, but could have the meaning of art. PMID:24008931

Self-Assembly of Mesoporous Nanotubes Assembled from Interwoven Ultrathin Birnessite-type MnO2 Nanosheets for Asymmetric Supercapacitors

PubMed Central

Huang, Ming; Zhang, Yuxin; Li, Fei; Zhang, Lili; Ruoff, Rodney S.; Wen, Zhiyu; Liu, Qing

2014-01-01

Porous nanotubes comprised of MnO2 nanosheets were fabricated with a one-pot hydrothermal method using polycarbonate membrane as the template. The diameter and thickness of nanotubes can be controlled by choice of the membrane pore size and the chemistry. The porous MnO2 nanotubes were used as a supercapacitor electrode. The specific capacitance in a three-electrode system was 365 F g−1 at a current density of 0.25 A g−1 with capacitance retention of 90.4% after 3000 cycles. An asymmetric supercapacitor with porous MnO2 nanotubes as the positive electrode and activated graphene as the negative electrode yielded an energy density of 22.5 Wh kg−1 and a maximum power density of 146.2 kW kg−1; these values exceeded those reported for other MnO2 nanostructures. The supercapacitor performance was correlated with the hierarchical structure of the porous MnO2 nanotubes. PMID:24464344

Packaged Capacitive Pressure Sensor System for Aircraft Engine Health Monitoring

NASA Technical Reports Server (NTRS)

Scardelletti, Maximilian C.; Zorman, Christian A.

2016-01-01

This paper describes the development of a packaged silicon carbide (SiC) based MEMS pressure sensor system designed specifically for a conventional turbofan engine. The electronic circuit is based on a Clapp-type oscillator that incorporates a 6H-SiC MESFET, a SiCN MEMS capacitive pressure sensor, titanate MIM capacitors, wirewound inductors, and thick film resistors. The pressure sensor serves as the capacitor in the LC tank circuit, thereby linking pressure to the resonant frequency of the oscillator. The oscillator and DC bias circuitry were fabricated on an alumina substrate and secured inside a metal housing. The packaged sensing system reliably operates at 0 to 350 psi and 25 to 540C. The system has a pressure sensitivity of 6.8 x 10E-2 MHzpsi. The packaged system shows negligible difference in frequency response between 25 and 400C. The fully packaged sensor passed standard benchtop acceptance tests and was evaluated on a flight-worthy engine.

Highly Stretchable and Self-Healable Supercapacitor with Reduced Graphene Oxide Based Fiber Springs.

PubMed

Wang, Siliang; Liu, Nishuang; Su, Jun; Li, Luying; Long, Fei; Zou, Zhengguang; Jiang, Xueliang; Gao, Yihua

2017-02-28

In large-scale applications of portable and wearable electronic devices, high-performance supercapacitors are important energy supply sources. However, since the reliability and stability of supercapacitors are generally destroyed by mechanical deformation and damage during practical applications, the stretchability and self-healability must be exploited for the supercapacitors. Preparing the highly stretchable and self-healable electrodes is still a challenge. Here, we report reduced graphene oxide fiber based springs as electrodes for stretchable and self-healable supercapacitors. The fiber springs (diameters of 295 μm) are thick enough to reconnect the broken electrodes accurately by visual inspection. By wrapping fiber springs with a self-healing polymer outer shell, a stretchable and self-healable supercapacitor is successfully realized. The supercapacitor has 82.4% capacitance retention after a large stretch (100%), and 54.2% capacitance retention after the third healing. This work gave an essential strategy for designing and fabricating stretchable and self-healable supercapacitors in next-generation multifunctional electronic devices.

Preparing two-dimensional microporous carbon from Pistachio nutshell with high areal capacitance as supercapacitor materials

NASA Astrophysics Data System (ADS)

Xu, Jiandong; Gao, Qiuming; Zhang, Yunlu; Tan, Yanli; Tian, Weiqian; Zhu, Lihua; Jiang, Lei

2014-07-01

Two-dimensional (2D) porous carbon AC-SPN-3 possessing of amazing high micropore volume ratio of 83% and large surface area of about 1069 m2 g-1 is high-yield obtained by pyrolysis of natural waste Pistachio nutshells with KOH activation. The AC-SPN-3 has a curved 2D lamellar morphology with the thickness of each slice about 200 nm. The porous carbon is consists of highly interconnected uniform pores with the median pore diameter of about 0.76 nm, which could potentially improve the performance by maximizing the electrode surface area accessible to the typical electrolyte ions (such as TEA+, diameter = ~0.68 nm). Electrochemical analyses show that AC-SPN-3 has significantly large areal capacitance of 29.3/20.1 μF cm-2 and high energy density of 10/39 Wh kg-1 at power of 52/286 kW kg-1 in 6 M KOH aqueous electrolyte and 1 M TEABF4 in EC-DEC (1:1) organic electrolyte system, respectively.

Synthesis of green Fe3+/glucose/rGO electrode for supercapacitor application assisted by chemical exfoliation process from burning coconut shell

NASA Astrophysics Data System (ADS)

Putra, Gilang B. A.; Pradana, Herdy Y.; Soenaryo, Dimas E. T.; Baqiya, Malik A.; Darminto

2018-04-01

For the goal of large, environmental - friendly, renewable, and inexpensive energy storage, the development of supercapacitor electrodes is needed, by anchoring transition metal oxide (Fe3+ ion) as pseudo capacitor electrode material with reduced graphene oxide (rGO) from an old coconut shell as electrochemical double layer capacitor (EDLC). This porous electrode composite is prepared by sonication and chemical exfoliation assisted by acid. Synthesis of supercapacitor is also added by glucose, which acts as a spacer between layers of rGO to increase the capacitance, also as binder between the materials used. Combining Fe3+ with old coconut shell rGO give high specific capacitance of up to 99 F/g at a potential window of -1 V to 1 V. The Fe3+/glucose/rGO electrode has thickness of up to 57 nm (from PSA result) and give a uniform distribution from EDX mapping with disperse Fe domains and not bonding with rGO.

Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor

NASA Astrophysics Data System (ADS)

Migliorato, Piero; Delwar Hossain Chowdhury, Md; Gwang Um, Jae; Seok, Manju; Jang, Jin

2012-09-01

The analysis of current-voltage (I-V) and capacitance-voltage (C-V) characteristics for amorphous indium gallium zinc oxide Thin film transistors as a function of active layer thickness shows that negative bias under illumination stress (NBIS) is quantitatively explained by creation of a bulk double donor, with a shallow singly ionized state ɛ(0/+) > EC-0.073 eV and a deep doubly ionized state ɛ(++/+) < EC-0.3 eV. The gap density of states, extracted from the capacitance-voltage curves, shows a broad peak between EC-E = 0.3 eV and 1.0 eV, which increases in height with NBIS stress time and corresponds to the broadened transition energy between singly and doubly ionized states. We propose that the center responsible is an oxygen vacancy and that the presence of a stable singly ionized state, necessary to explain our experimental results, could be due to the defect environment provided by the amorphous network.

Electrical characterization of 4H-SiC metal-oxide-semiconductor structure with Al2O3 stacking layers as dielectric

NASA Astrophysics Data System (ADS)

Chang, P. K.; Hwu, J. G.

2018-02-01

Interface defects and oxide bulk traps conventionally play important roles in the electrical performance of SiC MOS device. Introducing the Al2O3 stack grown by repeated anodization of Al films can notably lower the leakage current in comparison to the SiO2 structure, and enhance the minority carrier response at low frequency when the number of Al2O3 layers increase. In addition, the interface quality is not deteriorated by the stacking of Al2O3 layers because the stacked Al2O3 structure grown by anodization possesses good uniformity. In this work, the capacitance equivalent thickness (CET) of stacking Al2O3 will be up to 19.5 nm and the oxidation process can be carried out at room temperature. For the Al2O3 gate stack with CET 19.5 nm on n-SiC substrate, the leakage current at 2 V is 2.76 × 10-10 A/cm2, the interface trap density at the flatband voltage is 3.01 × 1011 eV-1 cm-2, and the effective breakdown field is 11.8 MV/cm. Frequency dispersion and breakdown characteristics may thus be improved as a result of the reduction in trap density. The Al2O3 stacking layers are capable of maintaining the leakage current as low as possible even after constant voltage stress test, which will further ameliorate reliability characteristics.

Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition

NASA Astrophysics Data System (ADS)

Cao, Yan-Qiang; Wu, Bing; Wu, Di; Li, Ai-Dong

2017-05-01

In situ-formed SiO2 was introduced into HfO2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO2/SiO2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO2 deposition process. This interlayer shows fantastic thermal stability during annealing without obvious Hf-silicates formation. In addition, it can also suppress the GeO2 degradation. The electrical measurements show that capacitance equivalent thickness of 1.53 nm and a leakage current density of 2.1 × 10-3 A/cm2 at gate bias of Vfb + 1 V was obtained for the annealed sample. The conduction (valence) band offsets at the HfO2/SiO2/Ge interface with and without PDA are found to be 2.24 (2.69) and 2.48 (2.45) eV, respectively. These results indicate that in situ PEALD SiO2 may be a promising interfacial control layer for the realization of high-quality Ge-based transistor devices. Moreover, it can be demonstrated that PEALD is a much more powerful technology for ultrathin interfacial control layer deposition than MOCVD.

Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition.

PubMed

Cao, Yan-Qiang; Wu, Bing; Wu, Di; Li, Ai-Dong

2017-12-01

In situ-formed SiO 2 was introduced into HfO 2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO 2 /SiO 2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO 2 deposition process. This interlayer shows fantastic thermal stability during annealing without obvious Hf-silicates formation. In addition, it can also suppress the GeO 2 degradation. The electrical measurements show that capacitance equivalent thickness of 1.53 nm and a leakage current density of 2.1 × 10 -3 A/cm 2 at gate bias of V fb  + 1 V was obtained for the annealed sample. The conduction (valence) band offsets at the HfO 2 /SiO 2 /Ge interface with and without PDA are found to be 2.24 (2.69) and 2.48 (2.45) eV, respectively. These results indicate that in situ PEALD SiO 2 may be a promising interfacial control layer for the realization of high-quality Ge-based transistor devices. Moreover, it can be demonstrated that PEALD is a much more powerful technology for ultrathin interfacial control layer deposition than MOCVD.

SU-C-213-05: Evaluation of a Composite Copper-Plastic Material for a 3D Printed Radiation Therapy Bolus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vitzthum, L; Ehler, E; Sterling, D

2015-06-15

Purpose: To evaluate a novel 3D printed bolus fabricated from a copper-plastic composite as a thin flexible, custom fitting device that can replicate doses achieved with conventional bolus techniques. Methods: Two models of bolus were created on a 3D printer using a composite copper-PLA/PHA. Firstly, boluses were constructed at thicknesses of 0.4, 0.6 and 0.8 mm. Relative dose measurements were performed under the bolus with an Attix Chamber as well as with radiochromic film. Results were compared to superficial Attix Chamber measurements in a water equivalent material to determine the dosimetric water equivalence of the copper-PLA/PHA plastic. Secondly, CT imagesmore » of a RANDO phantom were used to create a custom fitting bolus across the anterolateral scalp. Surface dose with the bolus placed on the RANDO phantom was measured with radiochromic film at tangential angles with 6, 10, 10 flattening filter free (FFF) and 18 MV photon beams. Results: Mean surface doses for 6, 10, 10FFF and 18 MV were measured as a percent of Dmax for the flat bolus devices of each thickness. The 0.4 mm thickness bolus was determined to be near equivalent to 2.5 mm depth in water for all four energies. Surface doses ranged from 59–63% without bolus and 85–90% with the custom 0.4 mm copper-plastic bolus relative to the prescribed dose for an oblique tangential beam arrangement on the RANDO phantom. Conclusion: Sub-millimeter thickness, 3D printed composite copper-PLA/PHA bolus can provide a build-up effect equivalent to conventional bolus. At this thickness, the 3D printed bolus allows a level of flexure that may provide more patient comfort than current 3D printing materials used in bolus fabrication while still retaining the CT based custom patient shape. Funding provided by an intra-department grant of the University of Minnesota Department of Radiation Oncology.« less

Analysis of transonic flow about lifting wing-body configurations

NASA Technical Reports Server (NTRS)

Barnwell, R. W.

1975-01-01

An analytical solution was obtained for the perturbation velocity potential for transonic flow about lifting wing-body configurations with order-one span-length ratios and small reduced-span-length ratios and equivalent-thickness-length ratios. The analysis is performed with the method of matched asymptotic expansions. The angles of attack which are considered are small but are large enough to insure that the effects of lift in the region far from the configuration are either dominant or comparable with the effects of thickness. The modification to the equivalence rule which accounts for these lift effects is determined. An analysis of transonic flow about lifting wings with large aspect ratios is also presented.

Application of the Program Profile for the Design of Low-Speed, Low- Observable Configuration Airfoils

DTIC Science & Technology

1992-12-01

112 61 . Airfoil T503 - t/c = 3.79% .... ........... .. 113 62. Airfoil T503 Leading-Edge - t/c = 3.79% ..... ... 114 63. Pressure...points on C unit circle, 6 slope of airfoil surface near trailing edge 61 boundary-layer displacement thickness 62 boundary-layer momentum thickness 63...equivalent thickness NACA 4-digit airfoils . 4 II. Theory Potential-Flow Design Method This section will overview the basic theory used in PROFILE. Eppler

Direct growth of NiO nanosheets on mesoporous TiN film for energy storage devices

NASA Astrophysics Data System (ADS)

Lee, Jae Hun; Lim, Jung Yup; Lee, Chang Soo; Park, Jung Tae; Kim, Jong Hak

2017-10-01

We report an efficient energy storage electrode based on well-defined, interconnected NiO nanosheets (NiO-NS) grown directly on a mesoporous TiN (meso-TiN) film via a solvothermal method. A mesoporous TiO2 (meso-TiO2) film is prepared using a graft copolymer template and then thermally annealed in ammonia at 800 °C to convert meso-TiO2 into meso-TiN. The ultrathin interconnected NiO-NS provide a large surface area and effective electron pathway, which enhance their specific capacitance and electrochemical properties. In contrast, a less-organized structure with poor homogeneity, low porosity and some cracks is formed for dense-TiN film prepared without the PVC-g-POEM. The meso-TiN film acts as an efficient conductive support to grow the NiO-NS and enhances the diffusion of electron/electrolyte ions. Despite its low thickness (<1.3 μm), the NiO-NS/meso-TiN supercapacitor exhibits a high capacitance of 104 mF cm-2 and good cycle stability (86% capacitance retention) owing to the synergetic effects of the NiO-NS and meso-TiN heteronanostructure. The NiO-NS/meso-TiN film is also applied to a flexible substrate and exhibits no cracks after bending; thus, our work provides an efficient way to design flexible energy storage devices using graft-copolymer-directed heteronanostructures.

Construction of Hierarchical CuO/Cu₂O@NiCo₂S₄ Nanowire Arrays on Copper Foam for High Performance Supercapacitor Electrodes.

PubMed

Zhou, Luoxiao; He, Ying; Jia, Congpu; Pavlinek, Vladimir; Saha, Petr; Cheng, Qilin

2017-09-15

Hierarchical copper oxide @ ternary nickel cobalt sulfide (CuO/Cu₂O@NiCo₂S₄) core-shell nanowire arrays on Cu foam have been successfully constructed by a facile two-step strategy. Vertically aligned CuO/Cu₂O nanowire arrays are firstly grown on Cu foam by one-step thermal oxidation of Cu foam, followed by electrodeposition of NiCo₂S₄ nanosheets on the surface of CuO/Cu₂O nanowires to form the CuO/Cu₂O@NiCo₂S₄ core-shell nanostructures. Structural and morphological characterizations indicate that the average thickness of the NiCo₂S₄ nanosheets is ~20 nm and the diameter of CuO/Cu₂O core is ~50 nm. Electrochemical properties of the hierarchical composites as integrated binder-free electrodes for supercapacitor were evaluated by various electrochemical methods. The hierarchical composite electrodes could achieve ultrahigh specific capacitance of 3.186 F cm -2 at 10 mA cm -2 , good rate capability (82.06% capacitance retention at the current density from 2 to 50 mA cm -2 ) and excellent cycling stability, with capacitance retention of 96.73% after 2000 cycles at 10 mA cm -2 . These results demonstrate the significance of optimized design and fabrication of electrode materials with more sufficient electrolyte-electrode interface, robust structural integrity and fast ion/electron transfer.

A flexible super-capacitive solid-state power supply for miniature implantable medical devices.

PubMed

Meng, Chuizhou; Gall, Oren Z; Irazoqui, Pedro P

2013-12-01

We present a high-energy local power supply based on a flexible and solid-state supercapacitor for miniature wireless implantable medical devices. Wireless radio-frequency (RF) powering recharges the supercapacitor through an antenna with an RF rectifier. A power management circuit for the super-capacitive system includes a boost converter to increase the breakdown voltage required for powering device circuits, and a parallel conventional capacitor as an intermediate power source to deliver current spikes during high current transients (e.g., wireless data transmission). The supercapacitor has an extremely high area capacitance of ~1.3 mF/mm(2), and is in the novel form of a 100 μm-thick thin film with the merit of mechanical flexibility and a tailorable size down to 1 mm(2) to meet various clinical dimension requirements. We experimentally demonstrate that after fully recharging the capacitor with an external RF powering source, the supercapacitor-based local power supply runs a full system for electromyogram (EMG) recording that consumes ~670 μW with wireless-data-transmission functionality for a period of ~1 s in the absence of additional RF powering. Since the quality of wireless powering for implantable devices is sensitive to the position of those devices within the RF electromagnetic field, this high-energy local power supply plays a crucial role in providing continuous and reliable power for medical device operations.

Tolerance of low-frequency ultrasound sonophoresis: a double-blind randomized study on humans.

PubMed

Maruani, Annabel; Vierron, Emilie; Machet, Laurent; Giraudeau, Bruno; Halimi, Jean-Michel; Boucaud, Alain

2012-05-01

Sonophoresis [low-frequency ultrasound (US)] has been used in animals and in vitro to investigate enhanced percutaneous absorption of drugs. No study focused on its clinical human tolerance has been published as yet. We aimed to assess the bioeffects of low-frequency US in vivo on human skin in a double-blind randomized-controlled study. We applied pulse-mode US at 36 kHz for 5 min in a step procedure of increasing dosage, from 1.57 to 3.50 W/cm(2), and placebo. The primary outcome was toxic effects of the procedure, defined as a pain score >40 on a 0-100 mm visual analogue scale or necrosis. Erythema (scored from 0 to 3 in severity) was also evaluated. The secondary outcomes were measurements of skin thickness by high-resolution skin imaging, of skin capacitance and temperature. We included 34 healthy volunteers. We found no pain score >38 and no skin necrosis with either US or placebo. Erythema was systematically observed immediately after US application, but after 1 day, we observed three cases in the knee group. The most frequent adverse effect was tinnitus. We observed no marked increase in temperature or cutaneous thickness after US or placebo. Cutaneous capacitance increased immediately after both applications. Such data demonstrating good tolerance of sonophoresis can be useful before the initiation of a clinical trial of the therapeutic use of low-frequency sonophoresis in humans. © 2011 John Wiley & Sons A/S.

The Co-60 gamma-ray irradiation effects on the Al/HfSiO4/p-Si/Al MOS capacitors

NASA Astrophysics Data System (ADS)

Lok, R.; Kaya, S.; Karacali, H.; Yilmaz, E.

2017-12-01

In this work, the initial interface trap density (Nit) to examine device compability for microelectronics and then the Co-60 gamma irradiation responses of Al/HfSiO4/p-Si/Al (MOS) capacitors were investigated in various dose ranges up to 70 Gy. Pre-irradiation response of the devices was evaluated from high frequency (HF) and low frequency (LF) capacitance method and the Nit was calculated as 9.91 × 1011 cm-2 which shows that the HfSiO4/p-Si interface quality is convenient for microelectronics applications. The irradiation responses of the devices were carried out from flat-band and mid-gap voltage shifts obtained from stretch of capacitance characteristics prior to and after irradiation. The results show that the flat band voltages very slightly shifted to positive voltage values demonstrating the enhancement of negative charge trapping in device structure. The sensitivity of the Al/HfSiO4/p-Si/Al MOS capacitors was found to be 4.41 mV/Gy for 300 nm-thick HfSiO4 gate dielectrics. This value approximately 6.5 times smaller compared to the same thickness conventional SiO2 based MOS devices. Therefore, HfSiO4 exhibits crucial irradiation tolerance in gamma irradiation environment. Consequently, HfSiO4 dielectrics may have significant usage for microelectronic technology as a radiation hard material where radiation field exists such as in space applications.

MIM capacitors with various Al2O3 thicknesses for GaAs RFIC application

NASA Astrophysics Data System (ADS)

Jiahui, Zhou; Hudong, Chang; Honggang, Liu; Guiming, Liu; Wenjun, Xu; Qi, Li; Simin, Li; Zhiyi, He; Haiou, Li

2015-05-01

The impact of various thicknesses of Al2O3 metal—insulator—metal (MIM) capacitors on direct current and radio frequency (RF) characteristics is investigated. For 20 nm Al2O3, the fabricated capacitor exhibits a high capacitance density of 3850 pF/mm2 and acceptable voltage coefficients of capacitance of 681 ppm/V2 at 1 MHz. An outstanding VCC-α of 74 ppm/V2 at 1 MHz, resonance frequency of 8.2 GHz and Q factor of 41 at 2 GHz are obtained by 100 nm Al2O3 MIM capacitors. High-performance MIM capacitors using GaAs process and atomic layer deposition Al2O3 could be very promising candidates for GaAs RFIC applications. Project supported by the National Natural Science Foundation of China (Nos. 61274077, 61474031), the Guangxi Natural Science Foundation (No. 2013GXNSFGA019003), the Guangxi Department of Education Project (No. 201202ZD041), the Guilin City Technology Bureau (Nos. 20120104-8, 20130107-4), the China Postdoctoral Science Foundation Funded Project (Nos. 2012M521127, 2013T60566), the National Basic Research Program of China (Nos. 2011CBA00605, 2010CB327501), the Innovation Project of GUET Graduate Education (Nos. GDYCSZ201448, GDYCSZ201449), the State Key Laboratory of Electronic Thin Films and Integrated Devices, UESTC (No. KFJJ201205), and the Guilin City Science and Technology Development Project (Nos. 20130107-4, 20120104-8).

Liquid Phase Plasma Synthesis of Iron Oxide Nanoparticles on Nitrogen-Doped Activated Carbon Resulting in Nanocomposite for Supercapacitor Applications.

PubMed

Lee, Heon; Lee, Won-June; Park, Young-Kwon; Ki, Seo Jin; Kim, Byung-Joo; Jung, Sang-Chul

2018-03-25

Iron oxide nanoparticles supported on nitrogen-doped activated carbon powder were synthesized using an innovative plasma-in-liquid method, called the liquid phase plasma (LPP) method. Nitrogen-doped carbon (NC) was prepared by a primary LPP reaction using an ammonium chloride reactant solution, and an iron oxide/NC composite (IONCC) was prepared by a secondary LPP reaction using an iron chloride reactant solution. The nitrogen component at 3.77 at. % formed uniformly over the activated carbon (AC) surface after a 1 h LPP reaction. Iron oxide nanoparticles, 40~100 nm in size, were impregnated homogeneously over the NC surface after the LPP reaction, and were identified as Fe₃O₄ by X-ray photoelectron spectroscopy and X-ray diffraction. NC and IONCCs exhibited pseudo-capacitive characteristics, and their specific capacitance and cycling stability were superior to those of bare AC. The nitrogen content on the NC surface increased the compatibility and charge transfer rate, and the composites containing iron oxide exhibited a lower equivalent series resistance.

Development of Models for High Precision Simulation of the Space Mission Microscope

NASA Astrophysics Data System (ADS)

Bremer, Stefanie; List, Meike; Selig, Hanns; Lämmerzahl, Claus

MICROSCOPE is a French space mission for testing the Weak Equivalence Principle (WEP). The mission goal is the determination of the Eötvös parameter with an accuracy of 10-15. This will be achieved by means of two high-precision capacitive differential accelerometers, that are built by the French institute ONERA. At the German institute ZARM drop tower tests are carried out to verify the payload performance. Additionally, the mission data evaluation is prepared in close cooperation with the French partners CNES, ONERA and OCA. Therefore a comprehensive simulation of the real system including the science signal and all error sources is built for the development and testing of data reduction and data analysis algorithms to extract the WEP violation signal. Currently, the High Performance Satellite Dynamics Simulator (HPS), a cooperation project of ZARM and the DLR Institute of Space Systems, is adapted to the MICROSCOPE mission for the simulation of test mass and satellite dynamics. Models of environmental disturbances like solar radiation pressure are considered, too. Furthermore detailed modeling of the on-board capacitive sensors is done.

Large-scale preparation of shape controlled SnO and improved capacitance for supercapacitors: from nanoclusters to square microplates.

PubMed

Wang, Lu; Ji, Hongmei; Zhu, Feng; Chen, Zhi; Yang, Yang; Jiang, Xuefan; Pinto, João; Yang, Gang

2013-08-21

Here, we first provide a facile ultrasonic-assisted synthesis of SnO using SnCl2 and the organic solvent of ethanolamine (ETA). The moderate alkalinity of ETA and ultrasound play very important roles in the synthesis of SnO. After the hydrolysis of the intermediate of ETA-Sn(II), the as-synthesized SnO nanoclusters undergo assembly, amalgamation, and preferential growth to microplates in hydrothermal treatment. The as-synthesized SnO was characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), ultraviolet-visible absorption spectroscopy (UV-vis) and X-ray diffraction (XRD). To explore its potential applications in energy storage, SnO was fabricated into a supercapacitor electrode and characterized by cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and galvanostatic charge-discharge measurements. The as-synthesized SnO exhibits remarkable pseudocapacitive activity including high specific capacitance (208.9 F g(-1) at 0.1 A g(-1)), good rate capability (65.8 F g(-1) at 40 A g(-1)), and excellent cycling stability (retention 119.3% after 10,000 cycles) for application in supercapacitors. The capacitive behavior of SnO with various crystal morphologies was observed by fitted EIS using an equivalent circuit. The novel synthetic route for SnO is a convenient and potential way to large-scale production of microplates which is expected to be applicable in the synthesis of other metal oxide nanoparticles.

A linear spectral matching technique for retrieving equivalent water thickness and biochemical constituents of green vegetation

NASA Technical Reports Server (NTRS)

Gao, Bo-Cai; Goetz, Alexander F. H.

1992-01-01

Over the last decade, technological advances in airborne imaging spectrometers, having spectral resolution comparable with laboratory spectrometers, have made it possible to estimate biochemical constituents of vegetation canopies. Wessman estimated lignin concentration from data acquired with NASA's Airborne Imaging Spectrometer (AIS) over Blackhawk Island in Wisconsin. A stepwise linear regression technique was used to determine the single spectral channel or channels in the AIS data that best correlated with measured lignin contents using chemical methods. The regression technique does not take advantage of the spectral shape of the lignin reflectance feature as a diagnostic tool nor the increased discrimination among other leaf components with overlapping spectral features. A nonlinear least squares spectral matching technique was recently reported for deriving both the equivalent water thicknesses of surface vegetation and the amounts of water vapor in the atmosphere from contiguous spectra measured with the Airborne Visible/Infrared Imaging Spectrometer (AVIRIS). The same technique was applied to a laboratory reflectance spectrum of fresh, green leaves. The result demonstrates that the fresh leaf spectrum in the 1.0-2.5 microns region consists of spectral components of dry leaves and the spectral component of liquid water. A linear least squares spectral matching technique for retrieving equivalent water thickness and biochemical components of green vegetation is described.

Evaluation of a Myopic Normative Database for Analysis of Retinal Nerve Fiber Layer Thickness.

PubMed

Biswas, Sayantan; Lin, Chen; Leung, Christopher K S

2016-09-01

Analysis of retinal nerve fiber layer (RNFL) abnormalities with optical coherence tomography in eyes with high myopia has been complicated by high rates of false-positive errors. An understanding of whether the application of a myopic normative database can improve the specificity for detection of RNFL abnormalities in eyes with high myopia is relevant. To evaluate the diagnostic performance of a myopic normative database for detection of RNFL abnormalities in eyes with high myopia (spherical equivalent, -6.0 diopters [D] or less). In this cross-sectional study, 180 eyes with high myopia (mean [SD] spherical equivalent, -8.0 [1.8] D) from 180 healthy individuals were included in the myopic normative database. Another 46 eyes with high myopia from healthy individuals (mean [SD] spherical equivalent, -8.1 [1.8] D) and 74 eyes from patients with high myopia and glaucoma (mean [SD] spherical equivalent, -8.3 [1.9] D) were included for evaluation of specificity and sensitivity. The 95th and 99th percentiles of the mean and clock-hour circumpapillary RNFL thicknesses and the individual superpixel thicknesses of the RNFL thickness map measured by spectral-domain optical coherence tomography were calculated from the 180 eyes with high myopia. Participants were recruited from January 2, 2013, to December 30, 2015. The following 6 criteria of RNFL abnormalities were examined: (1) mean circumpapillary RNFL thickness below the lower 95th or (2) the lower 99th percentile; (3) one clock-hour or more for RNFL thickness below the lower 95th or (4) the lower 99th percentile; and (5) twenty contiguous superpixels or more of RNFL thickness in the RNFL thickness map below the lower 95th or (6) the lower 99th percentile. Specificities and sensitivities for detection of RNFL abnormalities. Of the 46 healthy eyes and 74 eyes with glaucoma studied (from 39 men and 38 women), the myopic normative database showed a higher specificity (63.0%-100%) than did the built-in normative database of the optical coherence tomography instrument (8.7%-87.0%) for detection of RNFL abnormalities across all the criteria examined (differences in specificities between 13.0% [95% CI, 1.1%-24.9%; P = .01] and 54.3% [95% CI, 37.8%-70.9%; P < .001]) except for the criterion of mean RNFL thickness below the lower 99th percentile, in which both normative databases had the same specificities (100%) but the myopic normative database exhibited a higher sensitivity (71.6% vs 86.5%; difference in sensitivities, 14.9% [95% CI, 4.6%-25.1%; P = .002]). The application of a myopic normative database improved the specificity without compromising the sensitivity compared with the optical coherence tomography instrument's built-in normative database for detection of RNFL abnormalities in eyes with high myopia. Inclusion of myopic normative databases should be considered in optical coherence tomography instruments.

Comparisons of Lower Cambrian ( ) Chilhowee Group siliciclastics of the frontal Blue Ridge with possible equivalents in the central Blue Ridge and basement massifs in the southern Appalachians

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aylor, J.G. Jr.; Tull, J.F.

1993-03-01

The Lower Cambrian Chilhowee Group (CG) along the Blue Ridge (BR) foreland boundary may also be represented in more internal parts of the orogen. The relative palinspastic positions of these more internal CG( ) sequences are poorly constrained, but they are believed to represent more outboard facies than those along the frontal BR. Although correlation with CG rocks of the frontal BR is indefinite due to metamorphism and polydeformation, correlative sequences may include the cover of the Corbin and Salem Church gneisses (Pinelog Fm.), Grandfather Mountain window, Murphy belt (MB) (Hiwassee River Group), Tallulah and Toxaway domes (TTD) (quartzite-schist membermore » of the Tallulah Falls Fm.), Pine Mountain window (Hollis Quartzite), and Sauratown Mountains window (Hogan Creek and Sauratown Fms.). The CG is generally bounded on the west by the Great Smoky fault. Siliciclastics of the CG represent stacked, coarsening upward sequences, separated by transgressive facies, and capped by a highstand of the Shady Dolomite or its equivalents. CG correlations in the Kahatchee Mountain Group of the Talladega belt and the siliciclastics in the Hiwassee River Group of the MB are supported by fossil constraints. Other units are correlated with CG based upon intimate associations with marble believed to be equivalent to the overlying Lower Cambrian Shady Dolomite, or upon presumed uncomformable relationships above Grenville basement. The CG averages about 1,260 meters thickness at the frontal BR, whereas lower siliciclastics in the MB average 1,830 meters. The Pinelog Fm. is up to 600 meters thick. The Hollis Quartzite is approximately 325 meters thick, and the estimated thickness of the quartz-schist member at Tallulah Falls is up to 900 meters. More distal siliciclastics of the central BR in the MB and distal siliciclastics overlying basement were deposited farther out on the shelf as stratigraphic, litho-facies equivalents of shallower marine and continental deposits of the CG.« less

Modelling of the modulation properties of arsenide and nitride VCSELs

NASA Astrophysics Data System (ADS)

Wasiak, Michał; Śpiewak, Patrycja; Moser, Philip; Gebski, Marcin; Schmeckebier, Holger; Sarzała, Robert P.; Lott, James A.

2017-02-01

In this paper, using our model of capacitance in vertical-cavity surface-emitting lasers (VCSELs), we analyze certain differences between an oxide-confined arsenide VCSEL emitting in the NIR region, and a nitride VCSEL emitting violet radiation. In the nitride laser its high differential resistance, caused partially by the low conductivity of p-type GaN material and the bottom contact configuration, is one of the main reasons why the nitride VCSEL has much worse modulation properties than the arsenide VCSEL. Using the complicated arsenide structure, we also analyze different possible ways of constructing the laser's equivalent circuit.

ZrO{sub 2}-ZnO composite thin films for humidity sensing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velumani, M., E-mail: velumanimohan@gmail.com; Sivacoumar, R.; Alex, Z. C.

2016-05-23

ZrO{sub 2}-ZnO composite thin films were grown by reactive DC magnetron sputtering. X-ray diffraction studies reveal the composite nature of the films with separate ZnO and ZrO{sub 2} phase. Scanning electron microscopy studies confirm the nanocrystalline structure of the films. The films were studied for their impedometric relative humidity (RH) sensing characteristics. The complex impedance plot was fitted with a standard equivalent circuit consisting of an inter-granular resistance and a capacitance in parallel. The DC resistance was found to be decreasing with increase in RH.

Redox non-innocent bis(2,6-diimine-pyridine) ligand-iron complexes as anolytes for flow battery applications.

PubMed

Duarte, Gabriel M; Braun, Jason D; Giesbrecht, Patrick K; Herbert, David E

2017-12-21

Diiminepyridines are a well-known class of "non-innocent" ligands that confer additional redox activity to coordination complexes beyond metal-centred oxidation/reduction. Here, we demonstrate that metal coordination complexes (MCCs) of diiminepyridine (DIP) ligands with iron are suitable anolytes for redox-flow battery applications, with enhanced capacitance and stability compared with bipyridine analogs, and access to storage of up to 1.6 electron equivalents. Substitution of the ligand is shown to be a key factor in the cycling stability and performance of MCCs based on DIP ligands, opening the door to further optimization.

Imaging of the native inversion layer in Silicon-On-Insulator wafers via Scanning Surface Photovoltage: Implications for RF device performance

NASA Astrophysics Data System (ADS)

Dahanayaka, Daminda; Wong, Andrew; Kaszuba, Philip; Moszkowicz, Leon; Slinkman, James; IBM SPV Lab Team

2014-03-01

Silicon-On-Insulator (SOI) technology has proved beneficial for RF cell phone technologies, which have equivalent performance to GaAs technologies. However, there is evident parasitic inversion layer under the Buried Oxide (BOX) at the interface with the high resistivity Si substrate. The latter is inferred from capacitance-voltage measurements on MOSCAPs. The inversion layer has adverse effects on RF device performance. We present data which, for the first time, show the extent of the inversion layer in the underlying substrate. This knowledge has driven processing techniques to suppress the inversion.

Static and Vibration Analyses of General Wing Structures Using Equivalent Plate Models

NASA Technical Reports Server (NTRS)

Kapania, Rakesh K.; Liu, Youhua

1999-01-01

An efficient method, using equivalent plate model, is developed for studying the static and vibration analyses of general built-up wing structures composed of skins, spars, and ribs. The model includes the transverse shear effects by treating the built-up wing as a plate following the Reissner-Mindlin theory, the so-called First-order Shear Deformation Theory (FSDT). The Ritz method is used with the Legendre polynomials being employed as the trial functions. This is in contrast to previous equivalent plate model methods which have used simple polynomials, known to be prone to numerical ill-conditioning, as the trial functions. The present developments are evaluated by comparing the results with those obtained using MSC/NASTRAN, for a set of examples. These examples are: (i) free-vibration analysis of a clamped trapezoidal plate with (a) uniform thickness, and (b) non-uniform thickness varying as an airfoil, (ii) free-vibration and static analyses (including skin stress distribution) of a general built-up wing, and (iii) free-vibration and static analyses of a swept-back box wing. The results obtained by the present equivalent plate model are in good agreement with those obtained by the finite element method.

Synthesis of nanometre-thick MoO3 sheets

NASA Astrophysics Data System (ADS)

Kalantar-Zadeh, Kourosh; Tang, Jianshi; Wang, Minsheng; Wang, Kang L.; Shailos, Alexandros; Galatsis, Kosmas; Kojima, Robert; Strong, Veronica; Lech, Andrew; Wlodarski, Wojtek; Kaner, Richard B.

2010-03-01

The formation of MoO3 sheets of nanoscale thickness is described. They are made from several fundamental sheets of orthorhombic α-MoO3, which can be processed in large quantities via a low cost synthesis route that combines thermal evaporation and mechanical exfoliation. These fundamental sheets consist of double-layers of linked distorted MoO6 octahedra. Atomic force microscopy (AFM) measurements show that the minimum resolvable thickness of these sheets is 1.4 nm which is equivalent to the thickness of two double-layers within one unit cell of the α-MoO3 crystal.

Optimization by simulation of the nature of the buffer, the gap profile of the absorber and the thickness of the various layers in CZTSSe solar cells

NASA Astrophysics Data System (ADS)

Chadel, Meriem; Chadel, Asma; Moustafa Bouzaki, Mohammed; Aillerie, Michel; Benyoucef, Boumediene; Charles, Jean-Pierre

2017-11-01

Performances of ZnO/ZnS/CZTSSe polycrystalline thin film solar cells (Copper Zinc Tin Sulphur Selenium-solar cell) were simulated for different thicknesses of the absorber and ZnS buffer layers. Simulations were performed with SCAPS (Solar Cell Capacitance Simulator) software, starting with actual parameters available from industrial data for commercial cells processing. The influences of the thickness of the various layers in the structure of the solar cell and the gap profile of the CZTSSe absorber layer on the performance of the solar cell were studied in detail. Through considerations of recent works, we discuss possible routes to enhance the performance of CZTSSe solar cells towards a higher efficiency level. Thus, we found that for one specific thickness of the absorber layer, the efficiency of the CZTSSe solar cell can be increased when a ZnS layer replaces the usual CdS buffer layer. On the other hand, the efficiency of the solar cell can be also improved when the absorber layer presents a grad-gap. In this case, the maximum efficiency for the CZTSSe cell was found equal to 13.73%.

Functionalized Thick Film Impedance Sensors for Use in In Vitro Cell Culture.

PubMed

Bartsch, Heike; Baca, Martin; Fernekorn, Uta; Müller, Jens; Schober, Andreas; Witte, Hartmut

2018-04-05

Multi-electrode arrays find application in electrophysiological recordings. The quality of the captured signals depends on the interfacial contact between electrogenic cells and the electronic system. Therefore, it requires reliable low-impedance electrodes. Low-temperature cofired ceramic technology offers a suitable platform for rapid prototyping of biological reactors and can provide both stable fluid supply and integrated bio-hardware interfaces for recordings in electrogenic cell cultures. The 3D assembly of thick film gold electrodes in in vitro bio-reactors has been demonstrated for neuronal recordings. However, especially when dimensions become small, their performance varies strongly. This work investigates the influence of different coatings on thick film gold electrodes with regard to their influence on impedance behavior. PSS layer, titanium oxynitride and laminin coatings are deposited on LTCC gold electrodes using different 2D and 3D MEA chip designs. Their impedance characteristics are compared and discussed. Titanium oxynitride layers emerged as suitable functionalization. Small 86-µm-electrodes have a serial resistance R s of 32 kOhm and serial capacitance C s of 4.1 pF at 1 kHz. Thick film gold electrodes with such coatings are thus qualified for signal recording in 3-dimensional in vitro cell cultures.

Mechanical Behavior of Microelectromechanical Microshutters

NASA Technical Reports Server (NTRS)

Burns, Devin Edward; Jones, Justin Scott; Li, Mary J.

2014-01-01

A custom micro-mechanical test system was constructed using off-the-shelf components to characterize the mechanical properties of microshutters. Microshutters are rectangular microelectromechanical apertures which open and close about a narrow torsion bar hinge. Displacement measurements were verified using both capacitive and digital image correlation techniques. Repeatable experiments on Si3N4 cantilever beams verified that the test system operates consistently. Using beam theory, the modulus of elasticity of the low stress Si3N4 was approximately 150 GPa, though significant uncertainty exists for this measurement due primarily to imprecise knowledge of the cantilever thickness. Tests conducted on microshutter arrays concluded that reducing the Si3N4 thickness from 250 nm to 500 nm reduces the torsional stiffness by a factor of approximately four. This is in good agreement with analytical and finite element models of the microshutters.

Space-charge behavior of 'Thin-MOS' diodes with MBE-grown silicon films

NASA Technical Reports Server (NTRS)

Lieneweg, U.; Bean, J. C.

1984-01-01

Basic theoretical and experimental characteristics of a novel 'Thin-MOS' technology, which has promising aspects for integrated high-frequency devices up to several hundred gigahertz are presented. The operation of such devices depends on charge injection into undoped silicon layers of about 1000-A thickness, grown by molecular beam epitaxy on heavily doped substrates, and isolation by thermally grown oxides of about 100-A thickness. Capacitance-voltage characteristics measured at high and low frequencies agree well with theoretical ones derived from uni and ambipolar space-charge models. It is concluded that after oxidation the residual doping in the epilayer is less than approximately 10 to the 16th/cu cm and rises by 3 orders of magnitude at the substrate interface within less than 100 A and that interface states at the oxide interface can be kept low.

Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications

NASA Astrophysics Data System (ADS)

Choi, Kyeong-Keun; Park, Chan-Gyung; Kim, Deok-kee

2016-01-01

The electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition were investigated for through-silicon via (TSV) and metal-insulator-metal applications at temperatures below 300 °C. ZrO2 films were able to be conformally deposited on the scallops of 50-µm-diameter, 100-µm-deep TSV holes. The mean breakdown field of 30-nm-thick ZrO2 films on 30-nm-thick Ta(N) increased about 41% (from 2.7 to 3.8 MV/cm) upon H2 plasma treatment. With the plasma treatment, the breakdown field of the film increased and the temperature coefficient of capacitance decreased significantly, probably as a result of the decreased carbon concentration in the film.

3D biomaterial matrix to support long term, full thickness, immuno-competent human skin equivalents with nervous system components.

PubMed

Vidal, Sarah E Lightfoot; Tamamoto, Kasey A; Nguyen, Hanh; Abbott, Rosalyn D; Cairns, Dana M; Kaplan, David L

2018-04-24

Current commercially available human skin equivalents (HSEs) are used for relatively short term studies (∼1 week) due in part to the time-dependent contraction of the collagen gel-based matrix and the limited cell types and skin tissue components utilized. In contrast, here we describe a new matrix consisting of a silk-collagen composite system that provides long term, stable cultivation with reduced contraction and degradation over time. This matrix supports full thickness skin equivalents which include nerves. The unique silk-collagen composite system preserves cell-binding domains of collagen while maintaining the stability and mechanics of the skin system for long-term culture with silk. The utility of this new composite protein-based biomaterial was demonstrated by bioengineering full thickness human skin systems using primary cells, including nerves and immune cells to establish an HSE with a neuro-immuno-cutaneous system. The HSEs with neurons and hypodermis, compared to in vitro skin-only HSEs controls, demonstrated higher secretion of pro-inflammatory cytokines. Proteomics analysis confirmed the presence of several proteins associated with inflammation across all sample groups, but HSEs with neurons had the highest amount of detected protein due to the complexity of the model. This improved, in vitro full thickness HSE model system utilizes cross-linked silk-collagen as the biomaterial and allows reduced reliance on animal models and provides a new in vitro tissue system for the assessment of chronic responses related to skin diseases and drug discovery. Copyright © 2018 Elsevier Ltd. All rights reserved.

Interfacial contribution to the dielectric response in semiconducting LaBiMn4/3Co2/3O6

NASA Astrophysics Data System (ADS)

Filippi, M.; Kundys, B.; Ranjith, R.; Kundu, Asish K.; Prellier, W.

2008-05-01

Impedance measurements have been performed on a sintered polycrystalline sample of the perovskite LaBiMn4/3Co2/3O6. Colossal dielectric permittivity is often measured in this class of semiconducting materials as a result of extrinsic factors. Our results show that a large offset in the capacitance, measured on a series of samples with different thickness, is due to the interfacial polarization. This contribution can then be removed from the data, creating a general procedure for dielectric measurements in semiconducting samples.

Photoluminescence of Ta2O5 films formed by the molecular layer deposition method

NASA Astrophysics Data System (ADS)

Baraban, A. P.; Dmitriev, V. A.; Prokof'ev, V. A.; Drozd, V. E.; Filatova, E. O.

2016-04-01

Ta2O5 films of different thicknesses (20-100 nm) synthesized by the molecular layer deposition method on p-type silicon substrates and thermally oxidized silicon substrates have been studied by the methods of high-frequency capacitance-voltage characteristics and photoluminescence. A hole-conduction channel is found to form in the Si-Ta2O5-field electrode system. A model of the electronic structure of Ta2O5 films is proposed based on an analysis of the measured PL spectra and performed electrical investigations.

Impact of GaN cap on charges in Al₂O₃/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ťapajna, M., E-mail: milan.tapajna@savba.sk; Jurkovič, M.; Válik, L.

2014-09-14

Oxide/semiconductor interface trap density (D{sub it}) and net charge of Al₂O₃/(GaN)/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with and without GaN cap were comparatively analyzed using comprehensive capacitance measurements and simulations. D{sub it} distribution was determined in full band gap of the barrier using combination of three complementary capacitance techniques. A remarkably higher D{sub it} (∼5–8 × 10¹²eV⁻¹ cm⁻²) was found at trap energies ranging from E C-0.5 to 1 eV for structure with GaN cap compared to that (D{sub it} ∼ 2–3 × 10¹²eV⁻¹ cm⁻²) where the GaN cap was selectively etched away. D{sub it} distributions were then used for simulation of capacitance-voltage characteristics. A good agreement betweenmore » experimental and simulated capacitance-voltage characteristics affected by interface traps suggests (i) that very high D{sub it} (>10¹³eV⁻¹ cm⁻²) close to the barrier conduction band edge hampers accumulation of free electron in the barrier layer and (ii) the higher D{sub it} centered about E C-0.6 eV can solely account for the increased C-V hysteresis observed for MOS-HEMT structure with GaN cap. Analysis of the threshold voltage dependence on Al₂O₃ thickness for both MOS-HEMT structures suggests that (i) positive charge, which compensates the surface polarization, is not necessarily formed during the growth of III-N heterostructure, and (ii) its density is similar to the total surface polarization charge of the GaN/AlGaN barrier, rather than surface polarization of the top GaN layer only. Some constraints for the positive surface compensating charge are discussed.« less

Optimum Material Composition for Minimizing the Stress Intensity Factor of Edge Crack in Thick-Walled FGM Circular Pipes Under Thermomechanical Loading

NASA Astrophysics Data System (ADS)

Sekine, Hideki; Yoshida, Kimiaki

This paper deals with the optimization problem of material composition for minimizing the stress intensity factor of radial edge crack in thick-walled functionally graded material (FGM) circular pipes under steady-state thermomechanical loading. Homogenizing the FGM circular pipes by simulating the inhomogeneity of thermal conductivity by a distribution of equivalent eigentemperature gradient and the inhomogeneity of Young's modulus and Poisson's ratio by a distribution of equivalent eigenstrain, we present an approximation method to obtain the stress intensity factor of radial edge crack in the FGM circular pipes. The optimum material composition for minimizing the stress intensity factor of radial edge crack is determined using a nonlinear mathematical programming method. Numerical results obtained for a thick-walled TiC/Al2O3 FGM circular pipe reveal that it is possible to decrease remarkably the stress intensity factor of radial edge crack by setting the optimum material composition profile.

Electrical and structural characterizations of crystallized Al{sub 2}O{sub 3}/GaN interfaces formed by in situ metalorganic chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, X., E-mail: xliu@ece.ucsb.edu; Yeluri, R.; Kim, J.

2016-01-07

Al{sub 2}O{sub 3} films were grown in situ by metalorganic chemical vapor deposition at 900 °C on GaN of both Ga- and N-face polarities. High-resolution transmission electron microscopy revealed that the Al{sub 2}O{sub 3} films were crystalline and primarily γ-phase. The Al{sub 2}O{sub 3}/Ga-GaN and Al{sub 2}O{sub 3}/N-GaN interfaces were both atomically sharp, and the latter further exhibited a biatomic step feature. The corresponding current-voltage (J-V) characteristics were measured on a metal-Al{sub 2}O{sub 3}-semiconductor capacitor (MOSCAP) structure. The leakage current was very high when the Al{sub 2}O{sub 3} thickness was comparable with the size of the crystalline defects, but was suppressedmore » to the order of 1 × 10{sup −8} A/cm{sup 2} with larger Al{sub 2}O{sub 3} thicknesses. The interface states densities (D{sub it}) were measured on the same MOSCAPs by using combined ultraviolet (UV)-assisted capacitance-voltage (C-V), constant capacitance deep level transient spectroscopy (CC-DLTS), and constant capacitance deep level optical spectroscopy (CC-DLOS) techniques. The average D{sub it} measured by CC-DLTS and CC-DLOS were 6.6 × 10{sup 12} and 8.8 × 10{sup 12} cm{sup −2} eV{sup −1} for Al{sub 2}O{sub 3}/Ga-GaN and 8.6 × 10{sup 12} and 8.6 × 10{sup 12 }cm{sup −2} eV{sup −1} for Al{sub 2}O{sub 3}/N-GaN, respectively. The possible origins of the positive (negative) polarization compensation charges in Al{sub 2}O{sub 3}/Ga-GaN (Al{sub 2}O{sub 3}/N-GaN), including the filling of interface states and the existence of structure defects and impurities in the Al{sub 2}O{sub 3} layer, were discussed in accordance with the experimental results and relevant studies in the literature.« less

Wheel-Based Ice Sensors for Road Vehicles

NASA Technical Reports Server (NTRS)

Arndt, G. Dickey; Fink, Patrick W.; Ngo, Phong H.; Carl, James R.

2011-01-01

Wheel-based sensors for detection of ice on roads and approximate measurement of the thickness of the ice are under development. These sensors could be used to alert drivers to hazardous local icing conditions in real time. In addition, local ice-thickness measurements by these sensors could serve as guidance for the minimum amount of sand and salt required to be dispensed locally onto road surfaces to ensure safety, thereby helping road crews to utilize their total supplies of sand and salt more efficiently. Like some aircraft wing-surface ice sensors described in a number of previous NASA Tech Briefs articles, the wheelbased ice sensors are based, variously, on measurements of changes in capacitance and/or in radio-frequency impedance as affected by ice on surfaces. In the case of ice on road surfaces, the measurable changes in capacitance and/or impedance are attributable to differences among the electric permittivities of air, ice, water, concrete, and soil. In addition, a related phenomenon that can be useful for distinguishing between ice and water is a specific transition in the permittivity of ice at a temperature- dependent frequency. This feature also provides a continuous calibration of the sensor to allow for changing road conditions. Several configurations of wheel-based ice sensors are under consideration. For example, in a simple two-electrode capacitor configuration, one of the electrodes would be a circumferential electrode within a tire, and the ground would be used as the second electrode. Optionally, the steel belts that are already standard parts of many tires could be used as the circumferential electrodes. In another example (see figure), multiple electrodes would be embedded in rubber between the steel belt and the outer tire surface. These electrodes would be excited in alternating polarities at one or more suitable audio or radio frequencies to provide nearly continuous monitoring of the road surface under the tire. In still another example, one or more microwave stripline(s) or coplanar waveguide(s) would be embedded in a tire near its outer surface; in comparison with lower-frequency capacitive devices, a device of this type could be more sensitive.

AC impedance analysis of polypyrrole thin films

NASA Technical Reports Server (NTRS)

Penner, Reginald M.; Martin, Charles R.

1987-01-01

The AC impedance spectra of thin polypyrrole films were obtained at open circuit potentials from -0.4 to 0.4 V vs SCE. Two limiting cases are discussed for which simplified equivalent circuits are applicable. At very positive potentials, the predominantly nonfaradaic AC impedance of polypyrrole is very similar to that observed previously for finite porous metallic films. Modeling of the data with the appropriate equivalent circuit permits effective pore diameter and pore number densities of the oxidized film to be estimated. At potentials from -0.4 to -0.3 V, the polypyrrole film is essentially nonelectronically conductive and diffusion of polymer oxidized sites with their associated counterions can be assumed to be linear from the film/substrate electrode interface. The equivalent circuit for the polypyrrole film at these potentials is that previously described for metal oxide, lithium intercalation thin films. Using this model, counterion diffusion coefficients are determined for both semi-infinite and finite diffusion domains. In addition, the limiting low frequency resistance and capacitance of the polypyrrole thin fims was determined and compared to that obtained previously for thicker films of the polymer. The origin of the observed potential dependence of these low frequency circuit components is discussed.

The modelling of carbon-based supercapacitors: Distributions of time constants and Pascal Equivalent Circuits

NASA Astrophysics Data System (ADS)

Fletcher, Stephen; Kirkpatrick, Iain; Dring, Roderick; Puttock, Robert; Thring, Rob; Howroyd, Simon

2017-03-01

Supercapacitors are an emerging technology with applications in pulse power, motive power, and energy storage. However, their carbon electrodes show a variety of non-ideal behaviours that have so far eluded explanation. These include Voltage Decay after charging, Voltage Rebound after discharging, and Dispersed Kinetics at long times. In the present work, we establish that a vertical ladder network of RC components can reproduce all these puzzling phenomena. Both software and hardware realizations of the network are described. In general, porous carbon electrodes contain random distributions of resistance R and capacitance C, with a wider spread of log R values than log C values. To understand what this implies, a simplified model is developed in which log R is treated as a Gaussian random variable while log C is treated as a constant. From this model, a new family of equivalent circuits is developed in which the continuous distribution of log R values is replaced by a discrete set of log R values drawn from a geometric series. We call these Pascal Equivalent Circuits. Their behaviour is shown to resemble closely that of real supercapacitors. The results confirm that distributions of RC time constants dominate the behaviour of real supercapacitors.

Segmented and "equivalent" representation of the cable equation.

PubMed

Andrietti, F; Bernardini, G

1984-11-01

The linear cable theory has been applied to a modular structure consisting of n repeating units each composed of two subunits with different values of resistance and capacitance. For n going to infinity, i.e., for infinite cables, we have derived analytically the Laplace transform of the solution by making use of a difference method and we have inverted it by means of a numerical procedure. The results have been compared with those obtained by the direct application of the cable equation to a simplified nonmodular model with "equivalent" electrical parameters. The implication of our work in the analysis of the time and space course of the potential of real fibers has been discussed. In particular, we have shown that the simplified ("equivalent") model is a very good representation of the segmented model for the nodal regions of myelinated fibers in a steady situation and in every condition for muscle fibers. An approximate solution for the steady potential of myelinated fibers has been derived for both nodal and internodal regions. The applications of our work to other cases dealing with repeating structures, such as earthworm giant fibers, have been discussed and our results have been compared with other attempts to solve similar problems.

Microscopic Theory of Supercapacitors

NASA Astrophysics Data System (ADS)

Skinner, Brian Joseph

As new energy technologies are designed and implemented, there is a rising demand for improved energy storage devices. At present the most promising class of these devices is the electric double-layer capacitor (EDLC), also known as the supercapacitor. A number of recently created supercapacitors have been shown to produce remarkably large capacitance, but the microscopic mechanisms that underlie their operation remain largely mysterious. In this thesis we present an analytical, microscopic-level theory of supercapacitors, and we explain how such large capacitance can result. Specifically, we focus on four types of devices that have been shown to produce large capacitance. The first is a capacitor composed of a clean, low-temperature two-dimensional electron gas adjacent to a metal gate electrode. Recent experiments have shown that such a device can produce capacitance as much as 40% larger than that of a conventional plane capacitor. We show that this enhanced capacitance can be understood as the result of positional correlations between electrons and screening by the gate electrode in the form of image charges. Thus, the enhancement of the capacitance can be understood primarily as a classical, electrostatic phenomenon. Accounting for the quantum mechanical properties of the electron gas provides corrections to the classical theory, and these are discussed. We also present a detailed numerical calculation of the capacitance of the system based on a calculation of the system's ground state energy using the variational principle. The variational technique that we develop is broadly applicable, and we use it here to make an accurate comparison to experiment and to discuss quantitatively the behavior of the electrons' correlation function. The second device discussed in this thesis is a simple EDLC composed of an ionic liquid between two metal electrodes. We adopt a simple description of the ionic liquid and show that for realistic parameter values the capacitance can be as much as three times larger than that of a plane capacitor with thickness equal to the ion diameter. As in the previous system, this large capacitance is the result of image charge formation in the metal electrode and positional correlations between discrete ions that comprise the electric double-layer. We show that the maximum capacitance scales with the temperature to the power -1/3, and that at moderately large voltage the capacitance also decays as the inverse one third power of voltage. These results are confirmed by a Monte Carlo simulation. The third type of device we consider is that of a porous supercapacitor, where the electrode is made from a conducting material with a dense arrangement of narrow, planar pores into which ionic liquid can enter when a voltage is applied. In this case we show that when the electrode is metallic the narrow pores aggressively screen the interaction between neighboring ions in a pore, leading to an interaction energy between ions that decays exponentially. This exponential interaction between ions allows the capacitance to be nearly an order of magnitude larger than what is predicted by mean-field theories. This result is confirmed by a Monte Carlo simulation. We also present a theory for the capacitance when the electrode is not a perfect metal, but has a finite electronic screening radius. When this screening radius is larger than the distance between pores, ions begin to interact across multiple pores and the capacitance is determined by the Yukawa-like interaction of a three-dimensional, correlated arrangement of ions. Finally, we consider the case of supercapacitor electrodes made from a stack of graphene sheets with randomly-inserted "spacer" molecules. For such devices, experiments have produced very large capacitance despite the small density of states of the electrode material, which would seem to imply poor screening of the ionic charge. We show that these large capacitance values can be understood as the result of collective entrance of ions into the graphene stack (GS) and the renormalization of the ionic charge produced by nonlinear screening. The collective behavior of ions results from the strong elastic energy associated with intercalated ions deforming the GS, which creates an effective attraction between them. The result is the formation of "disks" of charge that enter the electrode collectively and have their charge renormalized by the strong, nonlinear screening of the surrounding graphene layers. This renormalization leads to a capacitance that at small voltages increases linearly with voltage and is enhanced over mean-field predictions by a large factor proportional to the number of ions within the disk to the power 9/4. At large voltages, the capacitance is dictated by the physics of graphite intercalation compounds and is proportional to the voltage raised to the power -4/5. We also examine theoretically the case where the effective fine structure constant of the GS is a small parameter, and we uncover a wealth of scaling regimes.

Electrochemical impedance spectroscopy based MEMS sensors for phthalates detection in water and juices

NASA Astrophysics Data System (ADS)

Zia, Asif I.; Mohd Syaifudin, A. R.; Mukhopadhyay, S. C.; Yu, P. L.; Al-Bahadly, I. H.; Gooneratne, Chinthaka P.; Kosel, Jǘrgen; Liao, Tai-Shan

2013-06-01

Phthalate esters are ubiquitous environmental and food pollutants well known as endocrine disrupting compounds (EDCs). These developmental and reproductive toxicants pose a grave risk to the human health due to their unlimited use in consumer plastic industry. Detection of phthalates is strictly laboratory based time consuming and expensive process and requires expertise of highly qualified and skilled professionals. We present a real time, non-invasive, label free rapid detection technique to quantify phthalates' presence in deionized water and fruit juices. Electrochemical impedance spectroscopy (EIS) technique applied to a novel planar inter-digital (ID) capacitive sensor plays a vital role to explore the presence of phthalate esters in bulk fluid media. The ID sensor with multiple sensing gold electrodes was fabricated on silicon substrate using micro-electromechanical system (MEMS) device fabrication technology. A thin film of parylene C polymer was coated as a passivation layer to enhance the capacitive sensing capabilities of the sensor and to reduce the magnitude of Faradic current flowing through the sensor. Various concentrations, 0.002ppm through to 2ppm of di (2-ethylhexyl) phthalate (DEHP) in deionized water, were exposed to the sensing system by dip testing method. Impedance spectra obtained was analysed to determine sample conductance which led to consequent evaluation of its dielectric properties. Electro-chemical impedance spectrum analyser algorithm was employed to model the experimentally obtained impedance spectra. Curve fitting technique was applied to deduce constant phase element (CPE) equivalent circuit based on Randle's equivalent circuit model. The sensing system was tested to detect different concentrations of DEHP in orange juice as a real world application. The result analysis indicated that our rapid testing technique is able to detect the presence of DEHP in all test samples distinctively.

Design and Development of 256x256 Linear Mode Low-Noise Avalanche Photodiode Arrays

NASA Technical Reports Server (NTRS)

Yuan, Ping; Sudharsanan, Rengarajan; Bai, Xiaogang; Boisvert, Joseph; McDonald, Paul; Chang, James

2011-01-01

A larger format photodiode array is always desirable for many LADAR imaging applications. However, as the array format increases, the laser power or the lens aperture has to increase to maintain the same flux per pixel thus increasing the size, weight and power of the imaging system. In order to avoid this negative impact, it is essential to improve the pixel sensitivity. The sensitivity of a short wavelength infrared linear-mode avalanche photodiode (APD) is a delicate balance of quantum efficiency, usable gain, excess noise factor, capacitance, and dark current of APD as well as the input equivalent noise of the amplifier. By using InA1As as a multiplication layer in an InP-based APD, the ionization coefficient ratio, k, is reduced from 0.40 (lnP) to 0.22, and the excess noise is reduced by about 50%. An additional improvement in excess noise of 25% was achieved by employing an impact-ionization-engineering structure with a k value of 0.15. Compared with the traditional InP structure, about 30% reduction in the noise-equivalent power with the following amplifier can be achieved. Spectrolab demonstrated 30-um mesa APD pixels with a dark current less than 10 nA and a capacitance of 60 fF at gain of 10. APD gain uninformity determines the usable gain of most pixels in an array, which is critical to focal plane array sensitivity. By fine tuning the material growth and device process, a break-down-voltage standard deviation of 0.1 V and gain of 30 on individual pixels were demonstrated in our 256x256 linear-mode APD arrays.

Multiple piezo-patch energy harvesters integrated to a thin plate with AC-DC conversion: analytical modeling and numerical validation

NASA Astrophysics Data System (ADS)

Aghakhani, Amirreza; Basdogan, Ipek; Erturk, Alper

2016-04-01

Plate-like components are widely used in numerous automotive, marine, and aerospace applications where they can be employed as host structures for vibration based energy harvesting. Piezoelectric patch harvesters can be easily attached to these structures to convert the vibrational energy to the electrical energy. Power output investigations of these harvesters require accurate models for energy harvesting performance evaluation and optimization. Equivalent circuit modeling of the cantilever-based vibration energy harvesters for estimation of electrical response has been proposed in recent years. However, equivalent circuit formulation and analytical modeling of multiple piezo-patch energy harvesters integrated to thin plates including nonlinear circuits has not been studied. In this study, equivalent circuit model of multiple parallel piezoelectric patch harvesters together with a resistive load is built in electronic circuit simulation software SPICE and voltage frequency response functions (FRFs) are validated using the analytical distributedparameter model. Analytical formulation of the piezoelectric patches in parallel configuration for the DC voltage output is derived while the patches are connected to a standard AC-DC circuit. The analytic model is based on the equivalent load impedance approach for piezoelectric capacitance and AC-DC circuit elements. The analytic results are validated numerically via SPICE simulations. Finally, DC power outputs of the harvesters are computed and compared with the peak power amplitudes in the AC output case.

Determination of lead equivalent values according to IEC 61331-1:2014—Report and short guidelines for testing laboratories

NASA Astrophysics Data System (ADS)

Büermann, L.

2016-09-01

Materials used for the production of protective devices against diagnostic medical X-radiation described in the international standard IEC 61331-3 need to be specified in terms of their lead attenuation equivalent thickness according to the methods described in IEC 61331-1. In May 2014 the IEC published the second edition of these standards which contain improved methods for the determination of attenuation ratios and the corresponding lead attenuation equivalent thicknesses of lead-reduced or lead-free materials. These methods include the measurement of scattered photons behind the protective material which were hitherto neglected but are becoming more important because of the increasing use of lead-reduced or even lead-free materials. They can offer the same protective effect but are up to 20% lighter and also easier to dispose of. The new method is based on attenuation ratios measured with the so-called ``inverse broad beam condition''. Since the corresponding measurement procedure is new and in some respects more complex than the methods used in the past, it was regarded as being helpful to have a description of how such measurements can reliably be performed. This technical report describes in detail the attenuation ratio measurements and corresponding procedures for the lead equivalent determinations of sample materials using the method with the inverse broad beam condition as carried out at the Physikalisch-Technische Bundesanstalt (PTB). PTB still offers material testing and certification for the German responsible notified body. In addition to the description of the measurements at PTB, a short technical guide is provided for testing laboratories which intend to establish this kind of protective material certification. The guide includes technical recommendations for the testing equipment like X-ray facilities, reference lead sheets and radiation detectors; special procedures for the determination of the lead attenuation equivalent thickness; their uncertainties and the necessary contents of the test certificate.

Simulated response of a multi-element thick gas electron multiplier-based microdosimeter to high energy neutrons.

PubMed

Moslehi, Amir; Raisali, Gholamreza

2018-07-01

The response of a microdosimeter for neutrons above 14 MeV is investigated. The mean quality factors and dose-equivalents are determined using lineal energy distributions calculated by Monte Carlo simulations (Geant4 toolkit). From 14 MeV to 5 GeV, the mean quality factors were found to vary between 6.00 and 9.30 and the dose-equivalents were in agreement with the true ambient dose-equivalent at the depth of 10 mm inside the ICRU sphere, H * (10). An energy-independent dose-equivalent response around a median value of 0.86 within 22% uncertainty was obtained. Therefore, the microdosimeter is appropriate for dose-equivalent measurement of high-energy neutrons. Copyright © 2018 Elsevier Ltd. All rights reserved.

A carbon CT system: how to obtain accurate stopping power ratio using a Bragg peak reduction technique

NASA Astrophysics Data System (ADS)

Lee, Sung Hyun; Sunaguchi, Naoki; Hirano, Yoshiyuki; Kano, Yosuke; Liu, Chang; Torikoshi, Masami; Ohno, Tatsuya; Nakano, Takashi; Kanai, Tatsuaki

2018-02-01

In this study, we investigate the performance of the Gunma University Heavy Ion Medical Center’s ion computed tomography (CT) system, which measures the residual range of a carbon-ion beam using a fluoroscopy screen, a charge-coupled-device camera, and a moving wedge absorber and collects CT reconstruction images from each projection angle. Each 2D image was obtained by changing the polymethyl methacrylate (PMMA) thickness, such that all images for one projection could be expressed as the depth distribution in PMMA. The residual range as a function of PMMA depth was related to the range in water through a calibration factor, which was determined by comparing the PMMA-equivalent thickness measured by the ion CT system to the water-equivalent thickness measured by a water column. Aluminium, graphite, PMMA, and five biological phantoms were placed in a sample holder, and the residual range for each was quantified simultaneously. A novel method of CT reconstruction to correct for the angular deflection of incident carbon ions in the heterogeneous region utilising the Bragg peak reduction (BPR) is also introduced in this paper, and its performance is compared with other methods present in the literature such as the decomposition and differential methods. Stopping power ratio values derived with the BPR method from carbon-ion CT images matched closely with the true water-equivalent length values obtained from the validation slab experiment.

Numerical analysis and optimization of Cu2O/TiO2, CuO/TiO2, heterojunction solar cells using SCAPS

NASA Astrophysics Data System (ADS)

Sawicka-Chudy, Paulina; Sibiński, Maciej; Wisz, Grzegorz; Rybak-Wilusz, Elżbieta; Cholewa, Marian

2018-05-01

In the presented work, the Cu2O/TiO2 and CuO/TiO2 heterojunction solar cells have been analyzed by the help of Solar Cell Capacitance Simulator (SCAPS). The effects of various layer parameters like thickness and defect density on the cell performance have been studied in details. Numerical analysis showed how the absorber (CuO, Cu2O) and buffer (TiO2) layers thickness influence the short-circuit current density (Jsc) and efficiency (η) of solar cells. Optimized solar cell structures of Cu2O/TiO2 and CuO/TiO2 showed a potential efficiency of ∼9 and ∼23%, respectively, under the AM1.5G spectrum. Additionally, external quantum efficiency (EQE) curves of the CuO/TiO2 and Cu2O/TiO2 solar cells for various layers thickness of TiO2 were calculated and the optical band gap (Eg) for CuO and Cu2O was obtained. Finally, we examined the effects of defect density on the photovoltaic parameters.

The Effect of Sliding Speed on Film Thickness and Pressure Supporting Ability of a Point Contact Under Zero Entrainment Velocity Conditions

NASA Technical Reports Server (NTRS)

Thompson, Peter M.; Jones, William R., Jr.; Jansen, Mark J.; Prahl, Joseph M.

2000-01-01

A unique tribometer is used to study film forming and pressure supporting abilities of point contacts at zero entrainment velocity (ZEV). Film thickness is determined using a capacitance technique, verified through comparisons of experimental results and theoretical elastohydrodynamic lubrication (EHL) predictions for rolling contacts. Experiments are conducted using through hardened AISI 52 100 steel balls, Polyalphaolefin (PAO) 182 and Pentaerythritol Tetraheptanoate (PT) lubricants, and sliding speeds between 2.0 to 12.0 m/s. PAO 182 and PT are found to support pressures up to 1. 1 GPa and 0.67 GPa respectively. Protective lubricant films ranging in thickness between 90 to 2 10 nm for PAO 182 and 220 to 340 nm for PT are formed. Lubricants experience shear stresses between 14 to 22 MPa for PAO 182 and 7 to 16 MPa for PT at shear rates of 10(exp 7)/sec. The lubricant's pressure supporting ability most likely results from the combination of immobile films and its transition to a glassy solid at high pressures.

Anomalously large capacitance of an ionic liquid described by the restricted primitive model

NASA Astrophysics Data System (ADS)

Loth, M. S.; Skinner, Brian; Shklovskii, B. I.

2010-11-01

We use Monte Carlo simulations to examine the simplest model of a room-temperature ionic liquid (RTIL), called the “restricted primitive model,” at a metal surface. We find that at moderately low temperatures the capacitance of the metal-RTIL interface is so large that the effective thickness of the electrostatic double layer is up to three times smaller than the ion radius. To interpret these results we suggest an approach which is based on the interaction between discrete ions and their image charges in the metal surface and which therefore goes beyond the mean-field approximation. When a voltage is applied across the interface, the strong image attraction causes counterions to condense onto the metal surface to form compact ion-image dipoles. These dipoles repel each other to form a correlated liquid. When the surface density of these dipoles is low, the insertion of an additional dipole does not require much energy. This leads to a large capacitance C that decreases monotonically with voltage V , producing a “bell-shaped” curve C(V) . We also consider what happens when the electrode is made from a semimetal rather than a perfect metal. In this case, the finite screening radius of the electrode shifts the reflection plane for image charges to the interior of the electrode, and we arrive at a “camel-shaped” C(V) . These predictions seem to be in qualitative agreement with experiment.

Synthesis and characterisation of Co-Co(OH)2 composite anode material on Cu current collector for energy storage devices

NASA Astrophysics Data System (ADS)

Yavuz, Abdulcabbar; Yakup Hacıibrahimoğlu, M.; Bedir, Metin

2017-04-01

A Co-Co(OH)2 modified electrode on inexpensive Cu substrate was synthesized at room temperature and demonstrated to be a promising anode material for energy storage devices. A modified Co film was obtained potentiostatically and was then potentiodynamically treated with KOH solution to form Co(OH)2. Co-Co(OH)2 coatings were obtained and were dominated by Co(OH)2 at the oxidized side, whereas Co dominant Co-Co(OH)2 occurred at the reduced side (-1.1 V). As OH- ions were able to diffuse into (out of) the film during oxidation (reduction) and did not react with the Cu current collector, the Co-Co(OH)2 electrode can be used as an anode material in energy storage devices. Although the specific capacitance of the electrodes varied depending on thickness, the redox reaction between the modified electrode and KOH electrolyte remained the same consisting of a surface-controlled and diffusion-controlled mechanism which had a desirable fast charge and discharge property. Capacity values remained constant after 250 cycles as the film evolved. Overall capacity retention was 84% for the film after 450 scans. A specific capacitance of 549 F g-1 was obtained for the Co-Co(OH)2 composite electrode in 6 M KOH at a scan rate of 5 mV s-1 and 73% of capacitance was retained when the scan rate was increased to 100 mV s-1.

Construction of Hierarchical CuO/Cu2O@NiCo2S4 Nanowire Arrays on Copper Foam for High Performance Supercapacitor Electrodes

PubMed Central

Zhou, Luoxiao; He, Ying; Jia, Congpu; Pavlinek, Vladimir; Saha, Petr; Cheng, Qilin

2017-01-01

Hierarchical copper oxide @ ternary nickel cobalt sulfide (CuO/Cu2O@NiCo2S4) core-shell nanowire arrays on Cu foam have been successfully constructed by a facile two-step strategy. Vertically aligned CuO/Cu2O nanowire arrays are firstly grown on Cu foam by one-step thermal oxidation of Cu foam, followed by electrodeposition of NiCo2S4 nanosheets on the surface of CuO/Cu2O nanowires to form the CuO/Cu2O@NiCo2S4 core-shell nanostructures. Structural and morphological characterizations indicate that the average thickness of the NiCo2S4 nanosheets is ~20 nm and the diameter of CuO/Cu2O core is ~50 nm. Electrochemical properties of the hierarchical composites as integrated binder-free electrodes for supercapacitor were evaluated by various electrochemical methods. The hierarchical composite electrodes could achieve ultrahigh specific capacitance of 3.186 F cm−2 at 10 mA cm−2, good rate capability (82.06% capacitance retention at the current density from 2 to 50 mA cm−2) and excellent cycling stability, with capacitance retention of 96.73% after 2000 cycles at 10 mA cm−2. These results demonstrate the significance of optimized design and fabrication of electrode materials with more sufficient electrolyte-electrode interface, robust structural integrity and fast ion/electron transfer. PMID:28914819

Estimation of carrier mobility and charge behaviors of organic semiconductor films in metal-insulator-semiconductor diodes consisting of high-k oxide/organic semiconductor double layers

NASA Astrophysics Data System (ADS)

Chosei, Naoya; Itoh, Eiji

2018-02-01

We have comparatively studied the charge behaviors of organic semiconductor films based on charge extraction by linearly increasing voltage in a metal-insulator-semiconductor (MIS) diode structure (MIS-CELIV) and by classical capacitance-voltage measurement. The MIS-CELIV technique allows the selective measurement of electron and hole mobilities of n- and p-type organic films with thicknesses representative of those of actual devices. We used an anodic oxidized sputtered Ta or Hf electrode as a high-k layer, and it effectively blocked holes at the insulator/semiconductor interface. We estimated the hole mobilities of the polythiophene derivatives regioregular poly(3-hexylthiophene) (P3HT) and poly(3,3‧‧‧-didodecylquarterthiophene) (PQT-12) before and after heat treatment in the ITO/high-k/(thin polymer insulator)/semiconductor/MoO3/Ag device structure. The hole mobility of PQT-12 was improved from 1.1 × 10-5 to 2.1 × 10-5 cm2 V-1 s-1 by the heat treatment of the device at 100 °C for 30 min. An almost two orders of magnitude higher mobility was obtained in MIS diodes with P3HT as the p-type layer. We also determined the capacitance from the displacement current in MIS diodes at a relatively low-voltage sweep, and it corresponded well to the classical capacitance-voltage and frequency measurement results.