Method of pedestal and common-mode noise correction for switched-capacitor analog memories

DOEpatents

Britton, Charles L.

1996-01-01

A method and apparatus for correcting common-mode noise and pedestal noise in a multichannel array of switched-capacitor analog memories wherein each analog memory is connected to an associated analog-to-digital converter. The apparatus comprises a single differential element in two different embodiments. In a first embodiment, the differential element is a reference analog memory connected to a buffer. In the second embodiment, the differential element is a reference analog memory connected to a reference analog-to-digital connected to an array of digital summing circuits.

Development of Electrochemical Supercapacitors for EMA Applications

NASA Technical Reports Server (NTRS)

Kosek, John A.; Dunning, Thomas; LaConti, Anthony B.

1996-01-01

A limitation of the typical electrochemical capacitor is the maximum available power and energy density, and an improvement in capacitance per unit weight and volume is needed. A solid-ionomer electrochemical capacitor having a unit cell capacitance greater than 2 F/sq cm and a repeating element thickness of 6 mils has been developed. This capacitor could provide high-current pulses for electromechanical actuation (EMA). Primary project objectives were to develop high-capacitance particulates, to increase capacitor gravimetric and volumetric energy densities above baseline and to fabricate a 10-V capacitor with a repeating element thickness of 6 mils or less. Specific EMA applications were identified and capacitor weight and volume projections made.

Effects of electrodes on the properties of sol-gel PZT based capacitors in FeRAM

NASA Astrophysics Data System (ADS)

Zhang, Ming-Ming; Jia, Ze; Ren, Tian-Ling

2009-05-01

The effects of electrodes on the properties of capacitors applied in ferroelectric random access memories (FeRAM) are investigated in this work. Pt and Ir are used as bottom and top electrodes (BE and TE), respectively, in sol-gel Pb(Zr xTi 1-x)O 3 (PZT) based capacitors. Bottom electrodes are found to play a dominant role in the properties of PZT films and capacitors. Capacitors using Pt as bottom electrode have larger remnant polarization (2Pr) than those using Ir which may result from the different orientations of PZT films. The higher Schottky barrier, more dense film and smaller roughness are believed to be the reasons for the better leakage performance of capacitors using Pt as bottom electrodes. Different vacancies types and interface conditions are believed to be the main reasons for the better fatigue (less than 10% initial 2Pr loss after 10 11 fatigue cycles) and better imprint properties of TE/PZT/Ir capacitors. Top electrodes are found to have smaller impact on the properties of capacitors compared with bottom electrodes. A decrease in 2Pr is found when Ir is used as top electrode instead of Pt for PZT/Pt, which is believed to be caused by the stress resulting from lattice mismatch. The different thermal processes that top and bottom electrodes suffered are believed to be the reason for the different impacts they have on capacitors.

Method of pedestal and common-mode noise correction for switched-capacitor analog memories

DOEpatents

Britton, C.L.

1997-09-23

A method and apparatus are disclosed for correcting common-mode noise and pedestal noise in a multichannel array of switched-capacitor analog memories wherein each analog memory is connected to an associated analog-to-digital converter. The apparatus comprises a single differential element in two different embodiments. In a first embodiment, the differential element is a reference analog memory connected to a buffer. In the second embodiment, the differential dement is a reference analog memory connected to a reference analog-to-digital connected to an array of digital summing circuits. 4 figs.

Method of pedestal and common-mode noise correction for switched-capacitor analog memories

DOEpatents

Britton, C.L.

1996-12-31

A method and apparatus are disclosed for correcting common-mode noise and pedestal noise in a multichannel array of switched-capacitor analog memories wherein each analog memory is connected to an associated analog-to-digital converter. The apparatus comprises a single differential element in two different embodiments. In a first embodiment, the differential element is a reference analog memory connected to a buffer. In the second embodiment, the differential element is a reference analog memory connected to a reference analog-to-digital connected to an array of digital summing circuits. 4 figs.

A 20 Mfps high frame-depth CMOS burst-mode imager with low power in-pixel NMOS-only passive amplifier

NASA Astrophysics Data System (ADS)

Wu, L.; San Segundo Bello, D.; Coppejans, P.; Craninckx, J.; Wambacq, P.; Borremans, J.

2017-02-01

This paper presents a 20 Mfps 32 × 84 pixels CMOS burst-mode imager featuring high frame depth with a passive in-pixel amplifier. Compared to the CCD alternatives, CMOS burst-mode imagers are attractive for their low power consumption and integration of circuitry such as ADCs. Due to storage capacitor size and its noise limitations, CMOS burst-mode imagers usually suffer from a lower frame depth than CCD implementations. In order to capture fast transitions over a longer time span, an in-pixel CDS technique has been adopted to reduce the required memory cells for each frame by half. Moreover, integrated with in-pixel CDS, an in-pixel NMOS-only passive amplifier alleviates the kTC noise requirements of the memory bank allowing the usage of smaller capacitors. Specifically, a dense 108-cell MOS memory bank (10fF/cell) has been implemented inside a 30μm pitch pixel, with an area of 25 × 30μm2 occupied by the memory bank. There is an improvement of about 4x in terms of frame depth per pixel area by applying in-pixel CDS and amplification. With the amplifier's gain of 3.3, an FD input-referred RMS noise of 1mV is achieved at 20 Mfps operation. While the amplification is done without burning DC current, including the pixel source follower biasing, the full pixel consumes 10μA at 3.3V supply voltage at full speed. The chip has been fabricated in imec's 130nm CMOS CIS technology.

Characteristics of Reduced Graphene Oxide Quantum Dots for a Flexible Memory Thin Film Transistor.

PubMed

Kim, Yo-Han; Lee, Eun Yeol; Lee, Hyun Ho; Seo, Tae Seok

2017-05-17

Reduced graphene oxide quantum dot (rGOQD) devices in formats of capacitor and thin film transistor (TFT) were demonstrated and examined as the first trial to achieve nonambipolar channel property. In addition, through a gold nanoparticle (Au NP) layer embedded between the rGOQD active channel and dielectric layer, memory capacitor and TFT performances were realized by capacitance-voltage (C-V) hysteresis and gate program, erase, and reprogram biases. First, capacitor structure of the rGOQD memory device was constructed to examine memory charging effect featured in hysteretic C-V behavior with a 30 nm dielectric layer of cross-linked poly(vinyl alcohol). For the intervening Au NP charging layer, self-assembled monolayer (SAM) formation of the Au NP was executed to utilize electrostatic interaction by a dip-coating process under ambient environments with a conformal fabrication uniformity. Second, the rGOQD memory TFT device was also constructed in the same format of the Au NPs SAMs on a flexible substrate. Characteristics of the rGOQD TFT output showed novel saturation curves unlike typical graphene-based TFTs. However, The rGOQD TFT device reveals relatively low on/off ratio of 10 1 and mobility of 5.005 cm 2 /V·s. For the memory capacitor, the flat-band voltage shift (ΔV FB ) was measured as 3.74 V for ±10 V sweep, and for the memory TFT, the threshold voltage shift (ΔV th ) by the Au NP charging was detected as 7.84 V. In summary, it was concluded that the rGOQD memory device could accomplish an ideal graphene-based memory performance, which could have provided a wide memory window and saturated output characteristics.

Atomic Layer Deposition Alumina-Passivated Silicon Nanowires: Probing the Transition from Electrochemical Double-Layer Capacitor to Electrolytic Capacitor.

PubMed

Gaboriau, Dorian; Boniface, Maxime; Valero, Anthony; Aldakov, Dmitry; Brousse, Thierry; Gentile, Pascal; Sadki, Said

2017-04-19

Silicon nanowires were coated by a 1-5 nm thin alumina layer by atomic layer deposition (ALD) in order to replace poorly reproducible and unstable native silicon oxide by a highly conformal passivating alumina layer. The surface coating enabled probing the behavior of symmetric devices using such electrodes in the EMI-TFSI electrolyte, allowing us to attain a large cell voltage up to 6 V in ionic liquid, together with very high cyclability with less than 4% capacitance fade after 10 6 charge/discharge cycles. These results yielded fruitful insights into the transition between an electrochemical double-layer capacitor behavior and an electrolytic capacitor behavior. Ultimately, thin ALD dielectric coatings can be used to obtain hybrid devices exhibiting large cell voltage and excellent cycle life of dielectric capacitors, while retaining energy and power densities close to the ones displayed by supercapacitors.

Impact of total ionizing dose irradiation on Pt/SrBi2Ta2O9/HfTaO/Si memory capacitors

NASA Astrophysics Data System (ADS)

Yan, S. A.; Zhao, W.; Guo, H. X.; Xiong, Y.; Tang, M. H.; Li, Z.; Xiao, Y. G.; Zhang, W. L.; Ding, H.; Chen, J. W.; Zhou, Y. C.

2015-01-01

In this work, metal-ferroelectric-insulator-semiconductor (MFIS) structure capacitors with SrBi2Ta2O9 (300 nm) as ferroelectric thin film and HfTaO (6 nm, 8 nm, 10 nm, and 12 nm) as insulating buffer layer were proposed and investigated. The prepared capacitors were fabricated and characterized before radiation and then subjected to 60Co gamma irradiation in steps of two dose levels. Significant irradiation-induced degradation of the electrical characteristics was observed. The radiation experimental results indicated that stability and reliability of as-fabricated MFIS capacitors for nonvolatile memory applications could become uncontrollable under strong irradiation dose and/or long irradiation time.

PLL jitter reduction by utilizing a ferroelectric capacitor as a VCO timing element.

PubMed

Pauls, Greg; Kalkur, Thottam S

2007-06-01

Ferroelectric capacitors have steadily been integrated into semiconductor processes due to their potential as storage elements within memory devices. Polarization reversal within ferroelectric capacitors creates a high nonlinear dielectric constant along with a hysteresis profile. Due to these attributes, a phase-locked loop (PLL), when based on a ferroelectric capacitor, has the advantage of reduced cycle-to-cycle jitter. PLLs based on ferroelectric capacitors represent a new research area for reduction of oscillator jitter.

Electrically Variable or Programmable Nonvolatile Capacitors

NASA Technical Reports Server (NTRS)

Shangqing, Liu; NaiJuan, Wu; Ignatieu, Alex; Jianren, Li

2009-01-01

Electrically variable or programmable capacitors based on the unique properties of thin perovskite films are undergoing development. These capacitors show promise of overcoming two important deficiencies of prior electrically programmable capacitors: Unlike in the case of varactors, it is not necessary to supply power continuously to make these capacitors retain their capacitance values. Hence, these capacitors may prove useful as components of nonvolatile analog and digital electronic memories. Unlike in the case of ferroelectric capacitors, it is possible to measure the capacitance values of these capacitors without changing the values. In other words, whereas readout of ferroelectric capacitors is destructive, readout of these capacitors can be nondestructive. A capacitor of this type is a simple two terminal device. It includes a thin film of a suitable perovskite as the dielectric layer, sandwiched between two metal or metal oxide electrodes (for example, see Figure 1). The utility of this device as a variable capacitor is based on a phenomenon, known as electrical-pulse-induced capacitance (EPIC), that is observed in thin perovskite films and especially in those thin perovskite films that exhibit the colossal magnetoresistive (CMR) effect. In EPIC, the application of one or more electrical pulses that exceed a threshold magnitude (typically somewhat less than 1 V) gives rise to a nonvolatile change in capacitance. The change in capacitance depends on the magnitude duration, polarity, and number of pulses. It is not necessary to apply a magnetic field or to cool the device below (or heat it above) room temperature to obtain EPIC. Examples of suitable CMR perovskites include Pr(1-x)Ca(x)MnO3, La(1-x)S-r(x)MnO3,and Nb(1-x)Ca(x)MnO3. Figure 2 is a block diagram showing an EPIC capacitor connected to a circuit that can vary the capacitance, measure the capacitance, and/or measure the resistance of the capacitor.

Metal-ferroelectric-metal capacitor based persistent memory for electronic product code class-1 generation-2 uhf passive radio-frequency identification tag

NASA Astrophysics Data System (ADS)

Yoon, Bongno; Sung, Man Young; Yeon, Sujin; Oh, Hyun S.; Kwon, Yoonjoo; Kim, Chuljin; Kim, Kyung-Ho

2009-03-01

With the circuits using metal-ferroelectric-metal (MFM) capacitor, rf operational signal properties are almost the same or superior to those of polysilicon-insulator-polysilicon, metal-insulator-metal, and metal-oxide-semiconductor (MOS) capacitors. In electronic product code global class-1 generation-2 uhf radio-frequency identification (RFID) protocols, the MFM can play a crucial role in satisfying the specifications of the inventoried flag's persistence times (Tpt) for each session (S0-S3, SL). In this paper, we propose and design a new MFM capacitor based memory scheme of which persistence time for S1 flag is measured at 2.2 s as well as indefinite for S2, S3, and SL flags during the period of power-on. A ferroelectric random access memory embedded RFID tag chip is fabricated with an industry-standard complementary MOS process. The chip size is around 500×500 μm2 and the measured power consumption is about 10 μW.

Development of electrochemical super capacitors for EMA applications

NASA Technical Reports Server (NTRS)

Kosek, J. A.; Dunning, T.; Laconti, A. B.

1995-01-01

In a NASA SBIR Phase I program (Contract No. NAS8-40119), Giner, Inc. evaluated the feasibility of fabricating an all-solid-ionomer multicell electrochemical capacitor having a unit cell capacitance greater than 2 F/sq cm and a repeating element thickness of 6 mils. This capacitor can possibly be used by NASA as a high-rate energy source for electromechanical actuator (EMA) activation for advanced space missions. The high unit cell capacitance and low repeating element thickness will allow for the fabrication of a low-volume, low-weight device, favorable characteristics for space applications. These same characteristics also make the capacitor attractive for terrestrial applications, such as load-leveling batteries or fuel cells in electric vehicle applications. Although the projected energy densities for electrochemical capacitors are about two orders of magnitude lower than that of batteries, the high-power-density characteristics of these devices render them as potentially viable candidates for meeting pulse or peak electrical power requirements for some anticipated aerospace mission scenarios, especially those with discharge times on the millisecond to second time scale. On a volumetric or gravimetric basis, the advantages of utilizing electrochemical capacitors rather than batteries for meeting the peak power demands associated with a specific mission scenario will largely depend upon the total and pulse durations of the power peaks. The effect of preparation conditions on RuO(x), the active component in an all-solid-ionomer electrochemical capacitor, was evaluated during this program. Methods were identified to prepare RuO(x) having a surface areagreater than 180 sq m/g, and a capacitance of greater than 2 F/sq cm. Further efforts to reproducibly obtain these high-surface-area materials in scaled-up batches will be evaluated in Phase 2. During this Phase 1 program we identified a superior Nafion 105 membrane, having a film thickness of 5 mils, that showed excellent performance in our all-solid-ionomer capacitors and resulted in electrochemical capacitors with a repeating element thickness of 8 mils. We are currently working with membrane manufacturers to obtain a high performance membrane in less than 3 mil thickness to obtain a repeating element thickness of 6 mils or less. A 10-cell all-solid ionomer capacitor stack, with each cell having a 222 sq cm active area, was fabricated and evaluated as part of the Phase 1 program. Further Scale-up of a high-energy-density stack is plannedin Phase 2.

Similarity between the response of memristive and memcapacitive circuits subjected to ramped voltage

NASA Astrophysics Data System (ADS)

Kanygin, Mikhail A.; Katkov, Mikhail V.; Pershin, Yuriy V.

2017-07-01

We report a similar feature in the response of resistor-memristor and capacitor-memcapacitor circuits with threshold-type memory devices driven by triangular waveform voltage. In both cases, the voltage across the memory device is stabilized during the switching of the memory device state. While in the memristive circuit this feature is observed when the applied voltage changes in one direction, the memcapacitive circuit with a ferroelectric memcapacitor demonstrates the voltage stabilization effect at both sweep directions. The discovered behavior of capacitor-memcapacitor circuit is also demonstrated experimentally. We anticipate that our observation can be used in the design of electronic circuits with emergent memory devices as well as in the identification and characterization of memory effects in threshold-type memory devices.

Fault handling schemes in electronic systems with specific application to radiation tolerance and VLSI design

NASA Technical Reports Server (NTRS)

Attia, John Okyere

1993-01-01

Naturally occurring space radiation particles can produce transient and permanent changes in the electrical properties of electronic devices and systems. In this work, the transient radiation effects on DRAM and CMOS SRAM were considered. In addition, the effect of total ionizing dose radiation of the switching times of CMOS logic gates were investigated. Effects of transient radiation on the column and cell of MOS dynamic memory cell was simulated using SPICE. It was found that the critical charge of the bitline was higher than that of the cell. In addition, the critical charge of the combined cell-bitline was found to be dependent on the gate voltage of the access transistor. In addition, the effect of total ionizing dose radiation on the switching times of CMOS logic gate was obtained. The results of this work indicate that, the rise time of CMOS logic gates increases, while the fall time decreases with an increase in total ionizing dose radiation. Also, by increasing the size of the P-channel transistor with respect to that of the N-channel transistor, the propagation delay of CMOS logic gate can be made to decrease with, or be independent of an increase in total ionizing dose radiation. Furthermore, a method was developed for replacing polysilicon feedback resistance of SRAMs with a switched capacitor network. A switched capacitor SRAM was implemented using MOS Technology. The critical change of the switched capacitor SRAM has a very large critical charge. The results of this work indicate that switched capacitor SRAM is a viable alternative to SRAM with polysilicon feedback resistance.

Non-volatile, high density, high speed, Micromagnet-Hall effect Random Access Memory (MHRAM)

NASA Technical Reports Server (NTRS)

Wu, Jiin C.; Katti, Romney R.; Stadler, Henry L.

1991-01-01

The micromagnetic Hall effect random access memory (MHRAM) has the potential of replacing ROMs, EPROMs, EEPROMs, and SRAMs because of its ability to achieve non-volatility, radiation hardness, high density, and fast access times, simultaneously. Information is stored magnetically in small magnetic elements (micromagnets), allowing unlimited data retention time, unlimited numbers of rewrite cycles, and inherent radiation hardness and SEU immunity, making the MHRAM suitable for ground based as well as spaceflight applications. The MHRAM device design is not affected by areal property fluctuations in the micromagnet, so high operating margins and high yield can be achieved in large scale integrated circuit (IC) fabrication. The MHRAM has short access times (less than 100 nsec). Write access time is short because on-chip transistors are used to gate current quickly, and magnetization reversal in the micromagnet can occur in a matter of a few nanoseconds. Read access time is short because the high electron mobility sensor (InAs or InSb) produces a large signal voltage in response to the fringing magnetic field from the micromagnet. High storage density is achieved since a unit cell consists only of two transistors and one micromagnet Hall effect element. By comparison, a DRAM unit cell has one transistor and one capacitor, and a SRAM unit cell has six transistors.

Current rectifying and resistive switching in high density BiFeO3 nanocapacitor arrays on Nb-SrTiO3 substrates

PubMed Central

Zhao, Lina; Lu, Zengxing; Zhang, Fengyuan; Tian, Guo; Song, Xiao; Li, Zhongwen; Huang, Kangrong; Zhang, Zhang; Qin, Minghui; SujuanWu; Lu, Xubing; Zeng, Min; Gao, Xingsen; Dai, Jiyan; Liu, Jun-Ming

2015-01-01

Ultrahigh density well-registered oxide nanocapacitors are very essential for large scale integrated microelectronic devices. We report the fabrication of well-ordered multiferroic BiFeO3 nanocapacitor arrays by a combination of pulsed laser deposition (PLD) method and anodic aluminum oxide (AAO) template method. The capacitor cells consist of BiFeO3/SrRuO3 (BFO/SRO) heterostructural nanodots on conductive Nb-doped SrTiO3 (Nb-STO) substrates with a lateral size of ~60 nm. These capacitors also show reversible polarization domain structures, and well-established piezoresponse hysteresis loops. Moreover, apparent current-rectification and resistive switching behaviors were identified in these nanocapacitor cells using conductive-AFM technique, which are attributed to the polarization modulated p-n junctions. These make it possible to utilize these nanocapacitors in high-density (>100 Gbit/inch2) nonvolatile memories and other oxide nanoelectronic devices. PMID:25853937

Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2

NASA Astrophysics Data System (ADS)

Palade, C.; Lepadatu, A. M.; Slav, A.; Lazanu, S.; Teodorescu, V. S.; Stoica, T.; Ciurea, M. L.

2018-01-01

Trilayer memory capacitors with Ge nanocrystals (NCs) floating gate in HfO2 were obtained by magnetron sputtering deposition on p-type Si substrate followed by rapid thermal annealing at relatively low temperature of 600 °C. The frequency dispersion of capacitance and resistance was measured in accumulation regime of Al/HfO2 gate oxide/Ge NCs in HfO2 floating gate/HfO2 tunnel oxide/SiOx/p-Si/Al memory capacitors. For simulation of the frequency dispersion a complex circuit model was used considering an equivalent parallel RC circuit for each layer of the trilayer structure. A series resistance due to metallic contacts and Si substrate was necessary to be included in the model. A very good fit to the experimental data was obtained and the parameters of each layer in the memory capacitor, i.e. capacitances and resistances were determined and in turn the intrinsic material parameters, i.e. dielectric constants and resistivities of layers were evaluated. The results are very important for the study and optimization of the hysteresis behaviour of floating gate memories based on NCs embedded in oxide.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moghadam, Reza M.; Xiao, Zhiyong; Ahmadi-Majlan, Kamyar

The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to low-power field-effect devices that can be used for logic or memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-oxide-semiconductor (MOS) capacitors, in which the polarization of a ferroelectric gate is coupled to the surface potential of a semiconducting channel. Here we demonstrate that ferroelectric MOS capacitors can be realized using single crystalline SrZrxTi1-xO3 (x= 0.7) that has been epitaxially grown on Ge. We find that themore » ferroelectric properties of SrZrxTi1-xO3 are exceptionally robust, as gate layers as thin as 5 nm give rise to hysteretic capacitance-voltage characteristics that are 2 V in width. The development of ferroelectric MOS capacitors with gate thicknesses that are technologically relevant opens a pathway to realize scalable ferroelectric field-effect devices.« less

A new time calibration method for switched-capacitor-array-based waveform samplers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, H.; Chen, C. -T.; Eclov, N.

2014-08-24

Here we have developed a new time calibration method for the DRS4 waveform sampler that enables us to precisely measure the non-uniform sampling interval inherent in the switched-capacitor cells of the DRS4. The method uses the proportionality between the differential amplitude and sampling interval of adjacent switched-capacitor cells responding to a sawtooth-shape pulse. In the experiment, a sawtooth-shape pulse with a 40 ns period generated by a Tektronix AWG7102 is fed to a DRS4 evaluation board for calibrating the sampling intervals of all 1024 cells individually. The electronic time resolution of the DRS4 evaluation board with the new time calibrationmore » is measured to be ~2.4 ps RMS by using two simultaneous Gaussian pulses with 2.35 ns full-width at half-maximum and applying a Gaussian fit. The time resolution dependencies on the time difference with the new time calibration are measured and compared to results obtained by another method. Ultimately, the new method could be applicable for other switched-capacitor-array technology-based waveform samplers for precise time calibration.« less

Control of an innovative super-capacitor-powered shape-memory-alloy actuated accumulator for blowout preventer

NASA Astrophysics Data System (ADS)

Chen, Jian; Li, Peng; Song, Gangbing; Ren, Zhang

2017-01-01

The design of a super-capacitor-powered shape-memory-alloy (SMA) actuated accumulator for blowout preventer (BOP) presented in this paper featured several advantages over conventional hydraulic accumulators including instant large current drive, quick system response and elimination of need for the pressure conduits. However, the mechanical design introduced two challenges, the nonlinear nature of SMA actuators and the varying voltage provided by a super capacitor, for control system design. A cerebellar model articulation controller (CMAC) feedforward plus PID controller was developed with the aim of compensation for these adverse effects. Experiments were conducted on a scaled down model and experimental results show that precision control can be achieved with the proposed configurations and algorithms.

Characterization of PZT Capacitor Structures with Various Electrode Materials Processed In-Situ Using AN Automated, Rotating Elemental Target, Ion Beam Deposition System

NASA Astrophysics Data System (ADS)

Gifford, Kenneth Douglas

Ferroelectric thin film capacitor structures containing lead zirconate titanate (PZT) as the dielectric, with the chemical formula Pb(rm Zr_{x }Ti_{1-x})O_3, were synthesized in-situ with an automated ion beam sputter deposition system. Platinum (Pt), conductive ruthenium oxide (RuO_2), and two types of Pt-RuO_2 hybrid electrodes were used as the electrode materials. The capacitor structures are characterized in terms of microstructure and electrical characteristics. Reduction or elimination of non-ferroelectric phases, that nucleate during PZT processing on Pt/TiO _2/MgO and RuO_2/MgO substrates, is achieved by reducing the thickness of the individually deposited layers and by interposing a buffer layer (~100-200A) of PbTiO _3 (PT) between the bottom electrode and the PZT film. Capacitor structures containing a Pt electrode exhibit poor fatigue resistance, irregardless of the PZT microstructure or the use of a PT buffer layer. From these results, and results from similar capacitors synthesized with sol-gel and laser ablation, PZT-based capacitor structures containing Pt electrodes are considered to be unsuitable for use in memory devices. Using a PT buffer layer, in capacitor structures containing RuO_2 top and bottom electrodes and polycrystalline, highly (101) oriented PZT, reduces or eliminates the nucleation of zirconium-titanium oxide, non-ferroelectric species at the bottom electrode interface during processing. This results in good fatigue resistance up to ~2times10^ {10} switching cycles. DC leakage current density vs. time measurements follow the Curie-von Schweidler law, J(t) ~ t^ {rm -n}. Identification of the high electric field current conduction mechanism is inconclusive. The good fatigue resistance, low dc leakage current, and excellent retention, qualifies the use of these capacitor structures in non-volatile random access (NVRAM) and dynamic random access (DRAM) memory devices. Excellent fatigue resistance (10% loss in remanent polarization up to ~2times10^ {10} switching cycles), low dc leakage current, and excellent retention are observed in capacitor structures containing polycrystalline PZT (exhibiting dominant (001) and (100) XRD reflections), a Pt-RuO_2 hybrid bottom electrode (Type IA), and an RuO _2 top electrode. These results, and electrical characterization results on capacitors containing co-deposited Pt-RuO_2 hybrid electrodes (Type II), show potential for application of these capacitor structures in NVRAM and DRAM memory devices.

Future Development of Dense Ferroelectric Memories for Space Applications

NASA Technical Reports Server (NTRS)

Philpy, Stephen C.; Derbenwick, Gary F.

2001-01-01

The availability of high density, radiation tolerant, nonvolatile memories is critical for space applications. Ferroelectric memories, when fabricated with radiation hardened complementary metal oxide semiconductors (CMOS), can be manufactured and packaged to provide high density replacements for Flash memory, which is not radiation tolerant. Previous work showed ferroelectric memory cells to be resistant to single event upsets and proton irradiation, and ferroelectric storage capacitors to be resistant to neutron exposure. In addition to radiation hardness, the fast programming times, virtually unlimited endurance, and low voltage, low power operation make ferroelectric memories ideal for space missions. Previously, a commercial double level metal 64-kilobit ferroelectric memory was presented. Although the capabilities of radiation hardened wafer fabrication facilities lag behind those of the most modern commercial wafer fabrication facilities, several paths to achieving radiation tolerant, dense ferroelectric memories are emerging. Both short and long term solutions are presented in this paper. Although worldwide major semiconductor companies are introducing commercial ferroelectric memories, funding limitations must be overcome to proceed with the development of high density, radiation tolerant ferroelectric memories.

Annual Conference on Nuclear and Space Radiation Effects, 15th, University of New Mexico, Albuquerque, N. Mex., July 18-21, 1978, Proceedings

NASA Technical Reports Server (NTRS)

Simons, M.

1978-01-01

Radiation effects in MOS devices and circuits are considered along with radiation effects in materials, space radiation effects and spacecraft charging, SGEMP, IEMP, EMP, fabrication of radiation-hardened devices, radiation effects in bipolar devices and circuits, simulation, energy deposition, and dosimetry. Attention is given to the rapid anneal of radiation-induced silicon-sapphire interface charge trapping, cosmic ray induced errors in MOS memory cells, a simple model for predicting radiation effects in MOS devices, the response of MNOS capacitors to ionizing radiation at 80 K, trapping effects in irradiated and avalanche-injected MOS capacitors, inelastic interactions of electrons with polystyrene, the photoelectron spectral yields generated by monochromatic soft X radiation, and electron transport in reactor materials.

Battery tester

DOE Office of Scientific and Technical Information (OSTI.GOV)

Poljak, M.D.

1985-08-12

This abstract discloses an improved battery tester for determining the acceptability of a Lithium Sulfur Dioxide (LiSO/sub 2/) storage battery at a given temperature and with one or more cells therein. The tester is generally made up of a first-comparison circuit having a series of series-interconnected components, namely a comparator, first and second flip-flops, and an AND gate. A first resistor is parallel connected to the first-comparison circuit. A second comparison circuit is also parallel connected to the first-comparison circuit and is generally made up of series-interconnected components, namely a second resistor, a capacitor, a buffer, and a second-comparator. Amore » first switch is connected to the first resistor and a second switch is parallel connected to the second-comparison circuit between the capacitor and the buffer. A logic control arrangement controls the operation of both switches, both comparators, and both flip-flops for testing a battery as to its start-up voltage and performance voltage characteristics all in a relatively short time period. In another embodiment of the tester, it is provided with an analog-to-digital converter, a memory, and a sensor arrangement for enhancing the versatility and reliability of the tester in determining the acceptability of a LiSO/sub 2/ battery.« less

Experimental Study of Floating-Gate-Type Metal-Oxide-Semiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application

NASA Astrophysics Data System (ADS)

Liu, Yongxun; Guo, Ruofeng; Kamei, Takahiro; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Ishikawa, Yuki; Hayashida, Tetsuro; Sakamoto, Kunihiro; Ogura, Atsushi; Masahara, Meishoku

2012-06-01

The floating-gate (FG)-type metal-oxide-semiconductor (MOS) capacitors with planar (planar-MOS) and three-dimensional (3D) nanosize triangular cross-sectional tunnel areas (3D-MOS) have successfully been fabricated by introducing rapid thermal oxidation (RTO) and postdeposition annealing (PDA), and their electrical characteristics between the control gate (CG) and FG have been systematically compared. It was experimentally found in both planar- and 3D-MOS capacitors that the uniform and higher breakdown voltages are obtained by introducing RTO owing to the high-quality thermal oxide formation on the surface and etched edge regions of the n+ polycrystalline silicon (poly-Si) FG, and the leakage current is highly suppressed after PDA owing to the improved quality of the tetraethylorthosilicate (TEOS) silicon dioxide (SiO2) between CG and FG. Moreover, a lower breakdown voltage between CG and FG was obtained in the fabricated 3D-MOS capacitors as compared with that of planar-MOS capacitors thanks to the enhanced local electric field at the tips of triangular tunnel areas. The developed nanosize triangular cross-sectional tunnel area is useful for the fabrication of low operating voltage flash memories.

An efficient route to fabricate fatigue-free P(VDF-TrFE) capacitors with enhanced piezoelectric and ferroelectric properties and excellent thermal stability for sensing and memory applications.

PubMed

Singh, Deepa; Deepak; Garg, Ashish

2017-03-15

P(VDF-TrFE), the best known ferroelectric polymer, suffers from a rather low piezoelectric response as well as poor electrical fatigue life, hampering its application potential. Herein, we report the fabrication of fatigue free poly(vinylidenedifluoride-trifluoroethylene) P(VDF-TrFE)-based capacitors with record piezoelectric coefficients and excellent thermal stability. We proposed a cost-effective and simple solution-based process to fabricate P(VDF-TrFE)-based memory capacitors with large polarization (8.9 μC cm -2 ), low voltage operation (15 V), and excellent fatigue endurance with 100% polarization retention up to 10 8 electrical switching cycles. The thin film capacitors fabricated using methyl ethyl ketone (MEK) and dimethyl sulfoxide (DMSO) as co-solvents also show a much higher piezoelectric coefficient (d 33 = -60 pm V -1 ) than the previously reported capacitors and are also thermally stable up to 380 K, making them ideal candidates for ferro-, piezo-, and pyro-electric applications, even in devices operating above room temperature. The observed results are well supported by first principles calculations, FTIR, XPS, and evaluation of cohesion energy for crystallization by DSC.

Electric-field-controlled interface dipole modulation for Si-based memory devices.

PubMed

Miyata, Noriyuki

2018-05-31

Various nonvolatile memory devices have been investigated to replace Si-based flash memories or emulate synaptic plasticity for next-generation neuromorphic computing. A crucial criterion to achieve low-cost high-density memory chips is material compatibility with conventional Si technologies. In this paper, we propose and demonstrate a new memory concept, interface dipole modulation (IDM) memory. IDM can be integrated as a Si field-effect transistor (FET) based memory device. The first demonstration of this concept employed a HfO 2 /Si MOS capacitor where the interface monolayer (ML) TiO 2 functions as a dipole modulator. However, this configuration is unsuitable for Si-FET-based devices due to its large interface state density (D it ). Consequently, we propose, a multi-stacked amorphous HfO 2 /1-ML TiO 2 /SiO 2 IDM structure to realize a low D it and a wide memory window. Herein we describe the quasi-static and pulse response characteristics of multi-stacked IDM MOS capacitors and demonstrate flash-type and analog memory operations of an IDM FET device.

Effect of temperature on the electrical properties of a metal-ferroelectric (SrBi2Ta2O9)-insulator (HfTaO)-silicon capacitor

NASA Astrophysics Data System (ADS)

Chen, Y. Q.; Xu, X. B.; Lei, Z. F.; Y Liao, X.; Wang, X.; Zeng, C.; En, Y. F.; Huang, Y.

2015-01-01

A metal-ferroelectric (SrBi2Ta2O9)-insulator (HfTaO)-semiconductor capacitor was fabricated, and the temperature dependence of its electrical properties was investigated. Within the temperature range of 300-220 K, the maximum memory window is up to 1.26 V, and it could be attributed to a higher coercive field of the ferroelectric film at a lower temperature, which is induced by the deeper and more box-shaped potential well based on the defect-domain interaction model. The memory window decreases with increasing temperature from 300 to 400 K, and the larger sweep voltage leads to a smaller memory window at a higher temperature, which could be attributed to temperature-dependent polarization of the ferroelectric film and charge injection from an Si substrate of the capacitor. With the temperature increasing from 220 to 400 K, the leakage current density increases with temperature by about one order, and the corresponding conduction mechanism is discussed. The results could provide useful guidelines for design and application of ferroelectric memory.

On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting Process

NASA Astrophysics Data System (ADS)

Sarkar, Biplab; Mills, Steven; Lee, Bongmook; Pitts, W. Shepherd; Misra, Veena; Franzon, Paul D.

2018-02-01

In this work, we report on mimicking the synaptic forgetting process using the volatile mem-capacitive effect of a resistive random access memory (RRAM). TiO2 dielectric, which is known to show volatile memory operations due to migration of inherent oxygen vacancies, was used to achieve the volatile mem-capacitive effect. By placing the volatile RRAM candidate along with SiO2 at the gate of a MOS capacitor, a volatile capacitance change resembling the forgetting nature of a human brain is demonstrated. Furthermore, the memory operation in the MOS capacitor does not require a current flow through the gate dielectric indicating the feasibility of obtaining low power memory operations. Thus, the mem-capacitive effect of volatile RRAM candidates can be attractive to the future neuromorphic systems for implementing the forgetting process of a human brain.

Ultimate scaling of TiN/ZrO2/TiN capacitors: Leakage currents and limitations due to electrode roughness

NASA Astrophysics Data System (ADS)

Jegert, Gunther; Kersch, Alfred; Weinreich, Wenke; Lugli, Paolo

2011-01-01

In this paper, we investigate the influence of electrode roughness on the leakage current in TiN/high-κ ZrO2/TiN (TZT) thin-film capacitors which are used in dynamic random access memory cells. Based on a microscopic transport model, which is expanded to incorporate electrode roughness, we assess the ultimate scaling potential of TZT capacitors in terms of equivalent oxide thickness, film smoothness, thickness fluctuations, defect density and distribution, and conduction band offset (CBO). The model is based on three-dimensional, fully self-consistent, kinetic Monte Carlo transport simulations. Tunneling transport in the bandgap of the dielectric is treated, which includes defect-assisted transport mechanisms. Electrode roughness is described in the framework of fractal geometry. While the short-range roughness of the electrodes is found not to influence significantly the leakage current, thickness fluctuations of the dielectric have a major impact. For thinner dielectric films they cause a transformation of the dominant transport mechanism from Poole-Frenkel conduction to trap-assisted tunneling. Consequently, the sensitivity of the leakage current on electrode roughness drastically increases on downscaling. Based on the simulations, optimization of the CBO is suggested as the most viable strategy to extend the scalability of TZT capacitors over the next chip generations.

Characteristics of Radio-Frequency Circuits Utilizing Ferroelectric Capacitors

NASA Technical Reports Server (NTRS)

Eskridge, Michael; Gui, Xiao; MacLeod, Todd; Ho, Fat D.

2011-01-01

Ferroelectric capacitors, most commonly used in memory circuits and variable components, were studied in simple analog radio-frequency circuits such as the RLC resonator and Colpitts oscillator. The goal was to characterize the RF circuits in terms of frequency of oscillation, gain, etc, using ferroelectric capacitors. Frequencies of oscillation of both circuits were measured and studied a more accurate resonant frequency can be obtained using the ferroelectric capacitors. Many experiments were conducted and data collected. A model to simulate the experimental results will be developed. Discrepancies in gain and frequency in these RF circuits when conventional capacitors are replaced with ferroelectric ones were studied. These results will enable circuit designers to anticipate the effects of using ferroelectric components in their radio- frequency applications.

Vacuum-induced quantum memory in an opto-electromechanical system

NASA Astrophysics Data System (ADS)

Qin, Li-Guo; Wang, Zhong-Yang; Wu, Shi-Chao; Gong, Shang-Qing; Ma, Hong-Yang; Jing, Jun

2018-03-01

We propose a scheme to implement electrically controlled quantum memory based on vacuum-induced transparency (VIT) in a high-Q tunable cavity, which is capacitively coupled to a mechanically variable capacitor by a charged mechanical cavity mirror as an interface. We analyze the changes of the cavity photons arising from vacuum-induced-Raman process and discuss VIT in an atomic ensemble trapped in the cavity. By slowly adjusting the voltage on the capacitor, the VIT can be adiabatically switched on or off, meanwhile, the transfer between the probe photon state and the atomic spin state can be electrically and adiabatically modulated. Therefore, we demonstrate a vacuum-induced quantum memory by electrically manipulating the mechanical mirror of the cavity based on electromagnetically induced transparency mechanism.

Evaluation of wet tantalum capacitors after exposure to extended periods of ripple current, volume 1

NASA Technical Reports Server (NTRS)

Watson, G. W.; Lasharr, J. C.; Shumaker, M. J.

1974-01-01

The application of tantalum capacitors in the Viking Lander includes both dc voltage and ripple current electrical stress, high temperature during nonoperating times (sterilization), and high vibration and shock loads. The capacitors must survive these severe environments without any degradation if reliable performance is to be achieved. A test program was established to evaluate both wet-slug tantalum and wet-foil capacitors under conditions accurately duplicating actual Viking applications. Test results of the electrical performance characteristics during extended periods of ripple current, the characteristics of the internal silver migration as a function for extended periods of ripple current, and the existence of any memory characteristics are presented.

Evaluation of wet tantalum capacitors after exposure to extended periods of ripple current, volume 2

NASA Technical Reports Server (NTRS)

Ward, C. M.

1975-01-01

The application of tantalum capacitors in the Viking Lander includes dc voltage and ripple current electrical stress, high temperature during nonoperating times (sterilization), and high vibration and shock loads. The capacitors must survive these severe environments without any degradation if reliable performance is to be achieved. A test program was established to evaluate both wet-slug tantalum and wet-foil capacitors under conditions accurately duplicating actual Viking applications. Test results of the electrical performance characteristics during extended periods of ripple current, the characteristics of the internal silver migration as a function of extended periods of ripple current, and the existence of any memory characteristics are presented.

Detection of charge storage on molecular thin films of tris(8-hydroxyquinoline) aluminum (Alq3) by Kelvin force microscopy: a candidate system for high storage capacity memory cells.

PubMed

Paydavosi, Sarah; Aidala, Katherine E; Brown, Patrick R; Hashemi, Pouya; Supran, Geoffrey J; Osedach, Timothy P; Hoyt, Judy L; Bulović, Vladimir

2012-03-14

Retention and diffusion of charge in tris(8-hydroxyquinoline) aluminum (Alq(3)) molecular thin films are investigated by injecting electrons and holes via a biased conductive atomic force microscopy tip into the Alq(3) films. After the charge injection, Kelvin force microscopy measurements reveal minimal changes with time in the spatial extent of the trapped charge domains within Alq(3) films, even for high hole and electron densities of >10(12) cm(-2). We show that this finding is consistent with the very low mobility of charge carriers in Alq(3) thin films (<10(-7) cm(2)/(Vs)) and that it can benefit from the use of Alq(3) films as nanosegmented floating gates in flash memory cells. Memory capacitors using Alq(3) molecules as the floating gate are fabricated and measured, showing durability over more than 10(4) program/erase cycles and the hysteresis window of up to 7.8 V, corresponding to stored charge densities as high as 5.4 × 10(13) cm(-2). These results demonstrate the potential for use of molecular films in high storage capacity nonvolatile memory cells. © 2012 American Chemical Society

Substituted Quaternary Ammonium Salts Improve Low-Temperature Performance of Double-Layer Capacitors

NASA Technical Reports Server (NTRS)

Brandon, Erik J.; Smart, Marshall C.; West, William C.

2011-01-01

Double-layer capacitors are unique energy storage devices, capable of supporting large current pulses as well as a very high number of charging and discharging cycles. The performance of doublelayer capacitors is highly dependent on the nature of the electrolyte system used. Many applications, including for electric and fuel cell vehicles, back-up diesel generators, wind generator pitch control back-up power systems, environmental and structural distributed sensors, and spacecraft avionics, can potentially benefit from the use of double-layer capacitors with lower equivalent series resistances (ESRs) over wider temperature limits. Higher ESRs result in decreased power output, which is a particular problem at lower temperatures. Commercially available cells are typically rated for operation down to only 40 C. Previous briefs [for example, Low Temperature Supercapacitors (NPO-44386), NASA Tech Briefs, Vol. 32, No. 7 (July 2008), p. 32, and Supercapacitor Electrolyte Solvents With Liquid Range Below 80 C (NPO-44855), NASA Tech Briefs, Vol. 34, No. 1 (January 2010), p. 44] discussed the use of electrolytes that employed low-melting-point co-solvents to depress the freezing point of traditional acetonitrile-based electrolytes. Using these modified electrolyte formulations can extend the low-temperature operational limit of double-layer capacitors beyond that of commercially available cells. This previous work has shown that although the measured capacitance is relatively insensitive to temperature, the ESR can rise rapidly at low temperatures, due to decreased electrolyte conductance within the pores of the high surface- area carbon electrodes. Most of these advanced electrolyte systems featured tetraethylammonium tetrafluoroborate (TEATFB) as the salt. More recent work at JPL indicates the use of the asymmetric quaternary ammonium salt triethylmethylammonium tetrafluoroborate (TEMATFB) or spiro-(l,l')-bipyrrolidium tetrafluoroborate (SBPBF4) in a 1:1 by volume solvent mixture of acetonitrile (AN) and methyl formate (MF) enables double-layer capacitor cells to operate well below -40 C with a relatively low ESR. Typically, a less than twofold increase in ESR is observed at -65 C relative to room-temperature values, when these modified electrolyte blends are used in prototype cells. Double-layer capacitor coin cells filled with these electrolytes have displayed the lowest measured ESR for an organic electrolyte to date at low temperature (based on a wide range of electrolyte screening studies at JPL). The cells featured high-surface-area (approximately equal to 2,500 m/g) carbon electrodes that were 0.50 mm thick and 1.6 cm in diameter, and coated with a thin layer of platinum to reduce cell resistance. A polyethylene separator was used to electrically isolate the electrodes.

Response of GaAs charge storage devices to transient ionizing radiation

NASA Astrophysics Data System (ADS)

Hetherington, D. L.; Klem, J. F.; Hughes, R. C.; Weaver, H. T.

Charge storage devices in which non-equilibrium depletion regions represent stored charge are sensitive to ionizing radiation. This results since the radiation generates electron-hole pairs that neutralize excess ionized dopant charge. Silicon structures, such as dynamic RAM or CCD cells are particularly sensitive to radiation since carrier diffusion lengths in this material are often much longer than the depletion width, allowing collection of significant quantities of charge from quasi-neutral sections of the device. For GaAs the situation is somewhat different in that minority carrier diffusion lengths are shorter than in silicon, and although mobilities are higher, we expect a reduction of radiation sensitivity as suggested by observations of reduced quantum efficiency in GaAs solar cells. Dynamic memory cells in GaAs have potential increased retention times. In this paper, we report the response of a novel GaAs dynamic memory element to transient ionizing radiation. The charge readout technique is nondestructive over a reasonable applied voltage range and is more sensitive to stored charge than a simple capacitor.

Development of a solar-powered infrared injection laser microminiature transmitting system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Falter, D.D.; Alley, G.T.; Falter, K.G.

1989-01-01

A solar-powered infrared microminiature transmitting system is being developed to provide scientists with a tool to continuously track and study Africanized bees. Present tracking methods have limited ranges and lack the capability of continuously tracking individual insects. Preliminary field tests of a stationary prototypic transmitter have demonstrated a range of 1.1 km. The basic design consists of an array of nine 1-mm{sup 2} solar cells, which collect energy for storage in a 1.0-{mu}F tantalum chip capacitor. When the capacitor has been charged to a sufficient level, the circuitry that monitors the capacitor voltage level wakes up'' and fires a 5-{mu}smore » pulse through an 840-nm GaAlAs injection laser diode. The process is then repeated, making the signal frequency (which ranges from 50 to 300 Hz) dependent on solar luminance. The solar cells, capacitor, and laser diode are mounted in hybrid microcircuit fashion directly on the silicon substrate containing the CMOS control and driver circuitry. The transmitter measures {approximately}4 {times} 6 mm and weighs {approximately}65 mg. The receiving system is based on an 8-in. telescope and a Si PIN diode detector. 8 refs., 10 figs.« less

Network Hubs Buffer Environmental Variation in Saccharomyces cerevisiae

PubMed Central

Levy, Sasha F; Siegal, Mark L

2008-01-01

Regulatory and developmental systems produce phenotypes that are robust to environmental and genetic variation. A gene product that normally contributes to this robustness is termed a phenotypic capacitor. When a phenotypic capacitor fails, for example when challenged by a harsh environment or mutation, the system becomes less robust and thus produces greater phenotypic variation. A functional phenotypic capacitor provides a mechanism by which hidden polymorphism can accumulate, whereas its failure provides a mechanism by which evolutionary change might be promoted. The primary example to date of a phenotypic capacitor is Hsp90, a molecular chaperone that targets a large set of signal transduction proteins. In both Drosophila and Arabidopsis, compromised Hsp90 function results in pleiotropic phenotypic effects dependent on the underlying genotype. For some traits, Hsp90 also appears to buffer stochastic variation, yet the relationship between environmental and genetic buffering remains an important unresolved question. We previously used simulations of knockout mutations in transcriptional networks to predict that many gene products would act as phenotypic capacitors. To test this prediction, we use high-throughput morphological phenotyping of individual yeast cells from single-gene deletion strains to identify gene products that buffer environmental variation in Saccharomyces cerevisiae. We find more than 300 gene products that, when absent, increase morphological variation. Overrepresented among these capacitors are gene products that control chromosome organization and DNA integrity, RNA elongation, protein modification, cell cycle, and response to stimuli such as stress. Capacitors have a high number of synthetic-lethal interactions but knockouts of these genes do not tend to cause severe decreases in growth rate. Each capacitor can be classified based on whether or not it is encoded by a gene with a paralog in the genome. Capacitors with a duplicate are highly connected in the protein–protein interaction network and show considerable divergence in expression from their paralogs. In contrast, capacitors encoded by singleton genes are part of highly interconnected protein clusters whose other members also tend to affect phenotypic variability or fitness. These results suggest that buffering and release of variation is a widespread phenomenon that is caused by incomplete functional redundancy at multiple levels in the genetic architecture. PMID:18986213

Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2-xO3 (x=0-2) dielectrics on TiN for dynamic random access memory applications

NASA Astrophysics Data System (ADS)

Schroeder, T.; Lupina, G.; Sohal, R.; Lippert, G.; Wenger, Ch.; Seifarth, O.; Tallarida, M.; Schmeisser, D.

2007-07-01

Engineered dielectrics combined with compatible metal electrodes are important materials science approaches to scale three-dimensional trench dynamic random access memory (DRAM) cells. Highly insulating dielectrics with high dielectric constants were engineered in this study on TiN metal electrodes by partly substituting Al in the wide band gap insulator Al2O3 by Pr cations. High quality PrAlO3 metal-insulator-metal capacitors were processed with a dielectric constant of 19, three times higher than in the case of Al2O3 reference cells. As a parasitic low dielectric constant interface layer between PrAlO3 and TiN limits the total performance gain, a systematic nondestructive synchrotron x-ray photoelectron spectroscopy study on the interface chemistry of PrxAl2-xO3 (x =0-2) dielectrics on TiN layers was applied to unveil its chemical origin. The interface layer results from the decreasing chemical reactivity of PrxAl2-xO3 dielectrics with increasing Pr content x to reduce native Ti oxide compounds present on unprotected TiN films. Accordingly, PrAlO3 based DRAM capacitors require strict control of the surface chemistry of the TiN electrode, a parameter furthermore of importance to engineer the band offsets of PrxAl2-xO3/TiN heterojunctions.

Quantum memristors

DOE PAGES

Pfeiffer, P.; Egusquiza, I. L.; Di Ventra, M.; ...

2016-07-06

Technology based on memristors, resistors with memory whose resistance depends on the history of the crossing charges, has lately enhanced the classical paradigm of computation with neuromorphic architectures. However, in contrast to the known quantized models of passive circuit elements, such as inductors, capacitors or resistors, the design and realization of a quantum memristor is still missing. Here, we introduce the concept of a quantum memristor as a quantum dissipative device, whose decoherence mechanism is controlled by a continuous-measurement feedback scheme, which accounts for the memory. Indeed, we provide numerical simulations showing that memory effects actually persist in the quantummore » regime. Our quantization method, specifically designed for superconducting circuits, may be extended to other quantum platforms, allowing for memristor-type constructions in different quantum technologies. As a result, the proposed quantum memristor is then a building block for neuromorphic quantum computation and quantum simulations of non-Markovian systems.« less

Capacitor-Chain Successive-Approximation ADC

NASA Technical Reports Server (NTRS)

Cunningham, Thomas

2003-01-01

A proposed successive-approximation analog-to-digital converter (ADC) would contain a capacitively terminated chain of identical capacitor cells. Like a conventional successive-approximation ADC containing a bank of binary-scaled capacitors, the proposed ADC would store an input voltage on a sample-and-hold capacitor and would digitize the stored input voltage by finding the closest match between this voltage and a capacitively generated sum of binary fractions of a reference voltage (Vref). However, the proposed capacitor-chain ADC would offer two major advantages over a conventional binary-scaled-capacitor ADC: (1) In a conventional ADC that digitizes to n bits, the largest capacitor (representing the most significant bit) must have 2(exp n-1) times as much capacitance, and hence, approximately 2(exp n-1) times as much area as does the smallest capacitor (representing the least significant bit), so that the total capacitor area must be 2(exp n) times that of the smallest capacitor. In the proposed capacitor-chain ADC, there would be three capacitors per cell, each approximately equal to the smallest capacitor in the conventional ADC, and there would be one cell per bit. Therefore, the total capacitor area would be only about 3(exp n) times that of the smallest capacitor. The net result would be that the proposed ADC could be considerably smaller than the conventional ADC. (2) Because of edge effects, parasitic capacitances, and manufacturing tolerances, it is difficult to make capacitor banks in which the values of capacitance are scaled by powers of 2 to the required precision. In contrast, because all the capacitors in the proposed ADC would be identical, the problem of precise binary scaling would not arise.

Evaluating the performance of microbial fuel cells powering electronic devices

NASA Astrophysics Data System (ADS)

Dewan, Alim; Donovan, Conrad; Heo, Deukhyoun; Beyenal, Haluk

A microbial fuel cell (MFC) is capable of powering an electronic device if we store the energy in an external storage device, such as a capacitor, and dispense that energy intermittently in bursts of high-power when needed. Therefore its performance needs to be evaluated using an energy-storing device such as a capacitor which can be charged and discharged rather than other evaluation techniques, such as continuous energy dissipation through a resistor. In this study, we develop a method of testing microbial fuel cell performance based on storing energy in a capacitor. When a capacitor is connected to a MFC it acts like a variable resistor and stores energy from the MFC at a variable rate. In practice the application of this method to testing microbial fuel cells is very challenging and time consuming; therefore we have custom-designed a microbial fuel cell tester (MFCT). The MFCT evaluates the performance of a MFC as a power source. It uses a capacitor as an energy storing device and waits until a desired amount of energy is stored then discharges the capacitor. The entire process is controlled using an analog-to-digital converter (ADC) board controlled by a custom-written computer program. The utility of our method and the MFCT is demonstrated using a laboratory microbial fuel cell (LMFC) and a sediment microbial fuel cell (SMFC). We determine (1) how frequently a MFC can charge a capacitor, (2) which electrode is current-limiting, (3) what capacitor value will allow the maximum harvested energy from a MFC, which is called the "optimum charging capacitor value," and (4) what capacitor charging potential will harvest the maximum energy from a MFC, which is called the "optimum charging potential." Using a LMFC we find that (1) the time needed to charge a 3-F capacitor from 0 to 500 mV is 108 min, (2) the optimum charging capacitor value is 3 F, and (3) the optimum charging potential is 300 mV. Using a SMFC we find that (1) the time needed to charge a 3-F capacitor from 0 to 500 mV is 5 min, (2) the optimum charging capacitor value is 3 F, and (3) the optimum charging potential is 500 mV. Our results demonstrate that the developed method and the MFCT can be used to evaluate and optimize energy harvesting when a MFC is used with a capacitor to power wireless sensors monitoring the environment.

Polarization fatigue of organic ferroelectric capacitors

PubMed Central

Zhao, Dong; Katsouras, Ilias; Li, Mengyuan; Asadi, Kamal; Tsurumi, Junto; Glasser, Gunnar; Takeya, Jun; Blom, Paul W. M.; de Leeuw, Dago M.

2014-01-01

The polarization of the ferroelectric polymer P(VDF-TrFE) decreases upon prolonged cycling. Understanding of this fatigue behavior is of great technological importance for the implementation of P(VDF-TrFE) in random-access memories. However, the origin of fatigue is still ambiguous. Here we investigate fatigue in thin-film capacitors by systematically varying the frequency and amplitude of the driving waveform. We show that the fatigue is due to delamination of the top electrode. The origin is accumulation of gases, expelled from the capacitor, under the impermeable top electrode. The gases are formed by electron-induced phase decomposition of P(VDF-TrFE), similar as reported for inorganic ferroelectric materials. When the gas barrier is removed and the waveform is adapted, a fatigue-free ferroelectric capacitor based on P(VDF-TrFE) is realized. The capacitor can be cycled for more than 108 times, approaching the programming cycle endurance of its inorganic ferroelectric counterparts. PMID:24861542

Novel Integrated System Architecture for an Autonomous Jumping Micro-Robot

DTIC Science & Technology

2010-01-01

traces Figure 45 Solder joints made directly to FET and capacitor before assembling circuit on hexapod Figure 46 Metal pads attached to...energetic chip using Loctite Figure 47 Circuit connected to oxidized nanoporous Si by soldering to pads on the substrate Figure 48 Capacitor discharge...thermal, shape memory alloy (SMA), piezoelectric , magnetic, etc. Each actuator has a unique set of characteristics, which include operating

Titanium-tungsten nanocrystals embedded in a SiO(2)/Al(2)O(3) gate dielectric stack for low-voltage operation in non-volatile memory.

PubMed

Yang, Shiqian; Wang, Qin; Zhang, Manhong; Long, Shibing; Liu, Jing; Liu, Ming

2010-06-18

Titanium-tungsten nanocrystals (NCs) were fabricated by a self-assembly rapid thermal annealing (RTA) process. Well isolated Ti(0.46)W(0.54) NCs were embedded in the gate dielectric stack of SiO(2)/Al(2)O(3). A metal-oxide-semiconductor (MOS) capacitor was fabricated to investigate its application in a non-volatile memory (NVM) device. It demonstrated a large memory window of 6.2 V in terms of flat-band voltage (V(FB)) shift under a dual-directional sweeping gate voltage of - 10 to 10 V. A 1.1 V V(FB) shift under a low dual-directional sweeping gate voltage of - 4 to 4 V was also observed. The retention characteristic of this MOS capacitor was demonstrated by a 0.5 V memory window after 10(4) s of elapsed time at room temperature. The endurance characteristic was demonstrated by a program/erase cycling test.

Improved speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5 charge-trapping layer

NASA Astrophysics Data System (ADS)

Zheng, Zhiwei; Huo, Zongliang; Zhang, Manhong; Zhu, Chenxin; Liu, Jing; Liu, Ming

2011-10-01

This paper reports the simultaneous improvements in erase speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5 charge-trapping layer. In comparison to a memory capacitor with a single HfO2 trapping layer, the erase speed of a memory capacitor with a stacked HfO2/Ta2O5 charge-trapping layer is 100 times faster and its memory window is enlarged from 2.7 to 4.8 V for the same ±16 V sweeping voltage range. With the same initial window of ΔVFB = 4 V, the device with a stacked HfO2/Ta2O5 charge-trapping layer has a 3.5 V extrapolated 10-year retention window, while the control device with a single HfO2 trapping layer has only 2.5 V for the extrapolated 10-year window. The present results demonstrate that the device with the stacked HfO2/Ta2O5 charge-trapping layer has a strong potential for future high-performance nonvolatile memory application.

Floating-gate memory based on an organic metal-insulator-semiconductor capacitor

NASA Astrophysics Data System (ADS)

William, S.; Mabrook, M. F.; Taylor, D. M.

2009-08-01

A floating gate memory element is described which incorporates an evaporated gold film embedded in the gate dielectric of a metal-insulator-semiconductor capacitor based on poly(3-hexylthiophene). On exceeding a critical amplitude in the voltage sweep, hysteresis is observed in the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the device. The anticlockwise hysteresis in C-V is consistent with strong electron trapping during the positive cycle but little hole trapping during the negative cycle. We argue that the clockwise hysteresis observed in the negative cycle of the I-V plot, arises from leakage of trapped holes through the underlying insulator to the control gate.

BioCapacitor: A novel principle for biosensors.

PubMed

Sode, Koji; Yamazaki, Tomohiko; Lee, Inyoung; Hanashi, Takuya; Tsugawa, Wakako

2016-02-15

Studies regarding biofuel cells utilizing biocatalysts such as enzymes and microorganisms as electrocatalysts have been vigorously conducted over the last two decades. Because of their environmental safety and sustainability, biofuel cells are expected to be used as clean power generators. Among several principles of biofuel cells, enzyme fuel cells have attracted significant attention for their use as alternative energy sources for future implantable devices, such as implantable insulin pumps and glucose sensors in artificial pancreas and pacemakers. However, the inherent issue of the biofuel cell principle is the low power of a single biofuel cell. The theoretical voltage of biofuel cells is limited by the redox potential of cofactors and/or mediators employed in the anode and cathode, which are inadequate for operating any devices used for biomedical application. These limitations inspired us to develop a novel biodevice based on an enzyme fuel cell that generates sufficient stable power to operate electric devices, designated "BioCapacitor." To increase voltage, the enzyme fuel cell is connected to a charge pump. To obtain a sufficient power and voltage to operate an electric device, a capacitor is used to store the potential generated by the charge pump. Using the combination of a charge pump and capacitor with an enzyme fuel cell, high voltages with sufficient temporary currents to operate an electric device were generated without changing the design and construction of the enzyme fuel cell. In this review, the BioCapacitor principle is described. The three different representative categories of biodevices employing the BioCapacitor principle are introduced. Further, the recent challenges in the developments of self-powered stand-alone biodevices employing enzyme fuel cells combined with charge pumps and capacitors are introduced. Finally, the future prospects of biodevices employing the BioCapacitor principle are addressed. Copyright © 2015 The Authors. Published by Elsevier B.V. All rights reserved.

Hybrid capacitor with activated carbon electrode, Ni(OH) 2 electrode and polymer hydrogel electrolyte

NASA Astrophysics Data System (ADS)

Nohara, Shinji; Asahina, Toshihide; Wada, Hajime; Furukawa, Naoji; Inoue, Hiroshi; Sugoh, Nozomu; Iwasaki, Hideharu; Iwakura, Chiaki

A new hybrid capacitor (HC) cell was assembled using an activated carbon (AC) negative electrode, an Ni(OH) 2 positive electrode and a polymer hydrogel electrolyte prepared from crosslinked potassium poly(acrylate) (PAAK) and KOH aqueous solution. The HC cell was characterized compared with an electric double layer capacitor (EDLC) using two AC electrodes and the polymer hydrogel electrolyte. It was found that the HC cell successfully worked in the larger voltage range and exhibited ca. 2.4 times higher capacitance than the EDLC cell. High-rate dischargeability of the HC cell was also superior to that of the EDLC cell. These improved characteristics strongly suggest that the HC cell can be a promising system of capacitors with high energy and power densities.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, S. A.; Tang, M. H., E-mail: mhtang@xtu.edu.cn, E-mail: lizheng@xtu.edu.cn; Xiao, Y. G.

In this work, metal-ferroelectric-insulator-semiconductor (MFIS) structure capacitors with SrBi{sub 2}Ta{sub 2}O{sub 9} (300 nm) as ferroelectric thin film and HfTaO (6 nm, 8 nm, 10 nm, and 12 nm) as insulating buffer layer were proposed and investigated. The prepared capacitors were fabricated and characterized before radiation and then subjected to {sup 60}Co gamma irradiation in steps of two dose levels. Significant irradiation-induced degradation of the electrical characteristics was observed. The radiation experimental results indicated that stability and reliability of as-fabricated MFIS capacitors for nonvolatile memory applications could become uncontrollable under strong irradiation dose and/or long irradiation time.

Capacitor assembly and related method of forming

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Lili; Tan, Daniel Qi; Sullivan, Jeffrey S.

A capacitor assembly is disclosed. The capacitor assembly includes a housing. The capacitor assembly further includes a plurality of capacitors disposed within the housing. Furthermore, the capacitor assembly includes a thermally conductive article disposed about at least a portion of a capacitor body of the capacitors, and in thermal contact with the capacitor body. Moreover, the capacitor assembly also includes a heat sink disposed within the housing and in thermal contact with at least a portion of the housing and the thermally conductive article such that the heat sink is configured to remove heat from the capacitor in a radialmore » direction of the capacitor assembly. Further, a method of forming the capacitor assembly is also presented.« less

The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET

NASA Astrophysics Data System (ADS)

Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Wang, Qianqiong

2017-09-01

The larger volume of capacitor and higher leakage current of transistor have become the inherent disadvantages for the traditional one transistor (1T)-one capacitor (1C) dynamic random access memory (DRAM). Recently, the tunneling FET (TFET) is applied in DRAM cell due to the low off-state current and high switching ratio. The dual-gate TFET (DG-TFET) DRAM cell with the capacitorless structure has the superior performance-higher retention time (RT) and weak temperature dependence. But the performance of TFET DRAM cell is sensitive to programming condition. In this paper, the guideline of programming optimization is discussed in detail by using simulation tool—Silvaco Atlas. Both the writing and reading operations of DG-TFET DRAM depend on the band-to-band tunneling (BTBT). During the writing operation, the holes coming from BTBT governed by Gate2 are stored in potential well under Gate2. A small negative voltage is applied at Gate2 to retain holes for a long time during holding "1". The BTBT governed by Gate1 mainly influences the reading current. Using the optimized programming condition, the DG-TFET DRAM obtains the higher current ratio of reading "1" to reading "0" (107) and RT of more than 2 s. The higher RT reduces the refresh rate and dynamic power consumption of DRAM.

Temperature aspect of degradation of electrochemical double-layer capacitors (EDLC)

NASA Astrophysics Data System (ADS)

Baek, Dong-Cheon; Kim, Hyun-Ho; Lee, Soon-Bok

2015-03-01

Electric double layer capacitors (EDLC) cells have a process variation and temperature dependency in capacitance so that balancing is required when they are connected in series, which includes electronic voltage management based on capacitance monitoring. This paper measured temperature aspect of capacitance periodically to monitor health and degradation behavior of EDLC stressed under high temperatures and zero below temperatures respectively, which enables estimation of the state of health (SOH) regardless of temperature. At high temperature, capacitance saturation and delayed expression of degradation was observed. After cyclic stress at zero below temperature, less effective degradation and time recovery phenomenon were occurred.

Metal-HfO{sub 2}-Ge capacitor: Its enhanced charge trapping properties with S-treated substrate and atomic-layer-deposited HfO{sub 2} layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, In-Sung; Jung, Yong Chan; Seong, Sejong

2015-01-15

The charge trapping properties of metal-HfO{sub 2}-Ge capacitor as a nonvolatile memory have been investigated with (NH{sub 4}){sub 2}S-treated Ge substrate and atomic-layer-deposited HfO{sub 2} layer. The interfacial layer generated by (NH{sub 4}){sub 2}S-treated Ge substrate reveals a trace of -S- bonding, very sharp interface edges, and smooth surface morphology. The Ru-HfO{sub 2}-Ge capacitor with (NH{sub 4}){sub 2}S-treated Ge substrate shows an enhanced interface state with little frequency dispersion, a lower leakage current, and very reliable properties with the enhanced endurance and retention than Ru-HfO{sub 2}-Ge capacitor with cyclic-cleaned Ge substrate.

Capacitorless 1T-DRAM on crystallized poly-Si TFT.

PubMed

Kim, Min Soo; Cho, Won Ju

2011-07-01

The single-transistor dynamic random-access memory (1T-DRAM) using a polycrystalline-silicon thin-film transistor (poly-Si TFT) was investigated. A 100-nm amorphous silicon thin film was deposited onto a 200-nm oxidized silicon wafer via low-pressure chemical vapor deposition (LPCVD), and the amorphous silicon layer was crystallized via eximer laser annealing (ELA) with a KrF source of 248 nm wavelength and 400 mJ/cm2 power. The fabricated capacitor less 1T-DRAM on the poly-Si TFT was evaluated via impact ionization and gate-induced drain leakage (GIDL) current programming. The device showed a clear memory margin between the "1" and "0" states, and as the channel length decreased, a floating body effect which induces a kink effect increases with high mobility. Furthermore, the GIDL current programming showed improved memory properties compared to the impact ionization method. Although the sensing margins and retention times in both program methods are commercially insufficient, it was confirmed the feasibility of the application of 1T-DRAM operation to TFTs.

Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

NASA Astrophysics Data System (ADS)

Jayanti, Srikant

Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG in the form of PVD TaN was investigated along with high-k blocking dielectric. The material properties of TaN metal and high-k / low-k dielectric engineering were systematically studied. And the resulting memory structures exhibit excellent memory characteristics and scalability of the metal FG down to ˜1nm, which is promising in order to reduce the unwanted FG-FG interferences. In the later part of the study, the thermal stability of the combined stack was examined and various approaches to improve the stability and understand the cause of instability were explored. The performance of the high-k IPD metal FG memory structure was observed to degrade with higher annealing conditions and the deteriorated behavior was attributed to the leakage instability of the high-k /TaN capacitor. While the degradation is pronounced in both MIM and MIS capacitors, a higher leakage increment was seen in MIM, which was attributed to the higher degree of dielectric crystallization. In an attempt to improve the thermal stability, the trade-off in using amorphous interlayers to reduce the enhanced dielectric crystallization on metal was highlighted. Also, the effect of oxygen vacancies and grain growth on the dielectric leakage was studied through a multi-deposition-multi-anneal technique. Multi step deposition and annealing in a more electronegative ambient was observed to have a positive impact on the dielectric performance.

Neutron imaging integrated circuit and method for detecting neutrons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nagarkar, Vivek V.; More, Mitali J.

The present disclosure provides a neutron imaging detector and a method for detecting neutrons. In one example, a method includes providing a neutron imaging detector including plurality of memory cells and a conversion layer on the memory cells, setting one or more of the memory cells to a first charge state, positioning the neutron imaging detector in a neutron environment for a predetermined time period, and reading a state change at one of the memory cells, and measuring a charge state change at one of the plurality of memory cells from the first charge state to a second charge statemore » less than the first charge state, where the charge state change indicates detection of neutrons at said one of the memory cells.« less

Bim controls IL-15 availability and limits engagement of multiple BH3-only proteins

PubMed Central

Kurtulus, S; Sholl, A; Toe, J; Tripathi, P; Raynor, J; Li, K-P; Pellegrini, M; Hildeman, D A

2015-01-01

During the effector CD8+ T-cell response, transcriptional differentiation programs are engaged that promote effector T cells with varying memory potential. Although these differentiation programs have been used to explain which cells die as effectors and which cells survive and become memory cells, it is unclear if the lack of cell death enhances memory. Here, we investigated effector CD8+ T-cell fate in mice whose death program has been largely disabled because of the loss of Bim. Interestingly, the absence of Bim resulted in a significant enhancement of effector CD8+ T cells with more memory potential. Bim-driven control of memory T-cell development required T-cell-specific, but not dendritic cell-specific, expression of Bim. Both total and T-cell-specific loss of Bim promoted skewing toward memory precursors, by enhancing the survival of memory precursors, and limiting the availability of IL-15. Decreased IL-15 availability in Bim-deficient mice facilitated the elimination of cells with less memory potential via the additional pro-apoptotic molecules Noxa and Puma. Combined, these data show that Bim controls memory development by limiting the survival of pre-memory effector cells. Further, by preventing the consumption of IL-15, Bim limits the role of Noxa and Puma in causing the death of effector cells with less memory potential. PMID:25124553

Bim controls IL-15 availability and limits engagement of multiple BH3-only proteins.

PubMed

Kurtulus, S; Sholl, A; Toe, J; Tripathi, P; Raynor, J; Li, K-P; Pellegrini, M; Hildeman, D A

2015-01-01

During the effector CD8+ T-cell response, transcriptional differentiation programs are engaged that promote effector T cells with varying memory potential. Although these differentiation programs have been used to explain which cells die as effectors and which cells survive and become memory cells, it is unclear if the lack of cell death enhances memory. Here, we investigated effector CD8+ T-cell fate in mice whose death program has been largely disabled because of the loss of Bim. Interestingly, the absence of Bim resulted in a significant enhancement of effector CD8+ T cells with more memory potential. Bim-driven control of memory T-cell development required T-cell-specific, but not dendritic cell-specific, expression of Bim. Both total and T-cell-specific loss of Bim promoted skewing toward memory precursors, by enhancing the survival of memory precursors, and limiting the availability of IL-15. Decreased IL-15 availability in Bim-deficient mice facilitated the elimination of cells with less memory potential via the additional pro-apoptotic molecules Noxa and Puma. Combined, these data show that Bim controls memory development by limiting the survival of pre-memory effector cells. Further, by preventing the consumption of IL-15, Bim limits the role of Noxa and Puma in causing the death of effector cells with less memory potential.

Reliability Evaluation of Base-Metal-Electrode (BME) Multilayer Ceramic Capacitors for Space Applications

NASA Technical Reports Server (NTRS)

Liu, David (Donghang)

2011-01-01

This paper reports reliability evaluation of BME ceramic capacitors for possible high reliability space-level applications. The study is focused on the construction and microstructure of BME capacitors and their impacts on the capacitor life reliability. First, the examinations of the construction and microstructure of commercial-off-the-shelf (COTS) BME capacitors show great variance in dielectric layer thickness, even among BME capacitors with the same rated voltage. Compared to PME (precious-metal-electrode) capacitors, BME capacitors exhibit a denser and more uniform microstructure, with an average grain size between 0.3 and approximately 0.5 micrometers, which is much less than that of most PME capacitors. The primary reasons that a BME capacitor can be fabricated with more internal electrode layers and less dielectric layer thickness is that it has a fine-grained microstructure and does not shrink much during ceramic sintering. This results in the BME capacitors a very high volumetric efficiency. The reliability of BME and PME capacitors was investigated using highly accelerated life testing (HALT) and regular life testing as per MIL-PRF-123. Most BME capacitors were found to fail· with an early dielectric wearout, followed by a rapid wearout failure mode during the HALT test. When most of the early wearout failures were removed, BME capacitors exhibited a minimum mean time-to-failure of more than 10(exp 5) years. Dielectric thickness was found to be a critical parameter for the reliability of BME capacitors. The number of stacked grains in a dielectric layer appears to play a significant role in determining BME capacitor reliability. Although dielectric layer thickness varies for a given rated voltage in BME capacitors, the number of stacked grains is relatively consistent, typically between 10 and 20. This may suggest that the number of grains per dielectric layer is more critical than the thickness itself for determining the rated voltage and the life expectancy of the BME capacitor. Since BME capacitors have a much smaller grain size than PME capacitors, it is reasonable to predict that BME capacitors with thinner dielectric layers may have an equivalent life expectancy to that of PME capacitors with thicker dielectric layers.

The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET.

PubMed

Li, Wei; Liu, Hongxia; Wang, Shulong; Chen, Shupeng; Wang, Qianqiong

2017-09-06

The larger volume of capacitor and higher leakage current of transistor have become the inherent disadvantages for the traditional one transistor (1T)-one capacitor (1C) dynamic random access memory (DRAM). Recently, the tunneling FET (TFET) is applied in DRAM cell due to the low off-state current and high switching ratio. The dual-gate TFET (DG-TFET) DRAM cell with the capacitorless structure has the superior performance-higher retention time (RT) and weak temperature dependence. But the performance of TFET DRAM cell is sensitive to programming condition. In this paper, the guideline of programming optimization is discussed in detail by using simulation tool-Silvaco Atlas. Both the writing and reading operations of DG-TFET DRAM depend on the band-to-band tunneling (BTBT). During the writing operation, the holes coming from BTBT governed by Gate2 are stored in potential well under Gate2. A small negative voltage is applied at Gate2 to retain holes for a long time during holding "1". The BTBT governed by Gate1 mainly influences the reading current. Using the optimized programming condition, the DG-TFET DRAM obtains the higher current ratio of reading "1" to reading "0" (10 7 ) and RT of more than 2 s. The higher RT reduces the refresh rate and dynamic power consumption of DRAM.

Nanoscale investigation of the piezoelectric properties of perovskite ferroelectrics and III-nitrides

NASA Astrophysics Data System (ADS)

Rodriguez, Brian Joseph

Nanoscale characterization of the piezoelectric and polarization related properties of III-Nitrides by piezoresponse force microscopy (PFM), electrostatic force microscopy (EFM) and scanning Kelvin probe microscopy (SKPM) resulted in the measurement of piezoelectric constants, surface charge and surface potential. Photo-electron emission microscopy (PEEM) was used to determine the local electronic band structure of a GaN-based lateral polarity heterostructure (GaN-LPH). Nanoscale characterization of the imprint and switching behavior of ferroelectric thin films by PFM resulted in the observation of domain pinning, while nanoscale characterization of the spatial variations in the imprint and switching behavior of integrated (111)-oriented PZT-based ferroelectric random access memory (FRAM) capacitors by PFM have revealed a significant difference in imprint and switching behavior between the inner and outer parts of capacitors. The inner regions of the capacitors are typically negatively imprinted and consequently tend to switch back after being poled by a positive bias, while regions at the edge of the capacitors tend to exhibit more symmetric hysteresis behavior. Evidence was obtained indicating that mechanical stress conditions in the central regions of the capacitors can lead to incomplete switching. A combination of vertical and lateral piezoresponse force microscopy (VPFM and LPFM, respectively) has been used to map the out-of-plane and in-plane polarization distribution, respectively, of integrated (111)-oriented PZT-based capacitors, which revealed poled capacitors are in a polydomain state.

Microwave-Assisted Size Control of Colloidal Nickel Nanocrystals for Colloidal Nanocrystals-Based Non-volatile Memory Devices

NASA Astrophysics Data System (ADS)

Yadav, Manoj; Velampati, Ravi Shankar R.; Mandal, D.; Sharma, Rohit

2018-03-01

Colloidal synthesis and size control of nickel (Ni) nanocrystals (NCs) below 10 nm are reported using a microwave synthesis method. The synthesised colloidal NCs have been characterized using x-ray diffraction, transmission electron microscopy (TEM) and dynamic light scattering (DLS). XRD analysis highlights the face centred cubic crystal structure of synthesised NCs. The size of NCs observed using TEM and DLS have a distribution between 2.6 nm and 10 nm. Furthermore, atomic force microscopy analysis of spin-coated NCs over a silicon dioxide surface has been carried out to identify an optimum spin condition that can be used for the fabrication of a metal oxide semiconductor (MOS) non-volatile memory (NVM) capacitor. Subsequently, the fabrication of a MOS NVM capacitor is reported to demonstrate the potential application of colloidal synthesized Ni NCs in NVM devices. We also report the capacitance-voltage (C-V) and capacitance-time (C-t) response of the fabricated MOS NVM capacitor. The C-V and C-t characteristics depict a large flat band voltage shift (V FB) and high retention time, respectively, which indicate that colloidal Ni NCs are excellent candidates for applications in next-generation NVM devices.

Switching behavior of resistive change memory using oxide nanowires

NASA Astrophysics Data System (ADS)

Aono, Takashige; Sugawa, Kosuke; Shimizu, Tomohiro; Shingubara, Shoso; Takase, Kouichi

2018-06-01

Resistive change random access memory (ReRAM), which is expected to be the next-generation nonvolatile memory, often has wide switching voltage distributions due to many kinds of conductive filaments. In this study, we have tried to suppress the distribution through the structural restriction of the filament-forming area using NiO nanowires. The capacitor with Ni metal nanowires whose surface is oxidized showed good switching behaviors with narrow distributions. The knowledge gained from our study will be very helpful in producing practical ReRAM devices.

Single layer of Ge quantum dots in HfO2 for floating gate memory capacitors.

PubMed

Lepadatu, A M; Palade, C; Slav, A; Maraloiu, A V; Lazanu, S; Stoica, T; Logofatu, C; Teodorescu, V S; Ciurea, M L

2017-04-28

High performance trilayer memory capacitors with a floating gate of a single layer of Ge quantum dots (QDs) in HfO 2 were fabricated using magnetron sputtering followed by rapid thermal annealing (RTA). The layer sequence of the capacitors is gate HfO 2 /floating gate of single layer of Ge QDs in HfO 2 /tunnel HfO 2 /p-Si wafers. Both Ge and HfO 2 are nanostructured by RTA at moderate temperatures of 600-700 °C. By nanostructuring at 600 °C, the formation of a single layer of well separated Ge QDs with diameters of 2-3 nm at a density of 4-5 × 10 15 m -2 is achieved in the floating gate (intermediate layer). The Ge QDs inside the intermediate layer are arranged in a single layer and are separated from each other by HfO 2 nanocrystals (NCs) about 8 nm in diameter with a tetragonal/orthorhombic structure. The Ge QDs in the single layer are located at the crossing of the HfO 2 NCs boundaries. In the intermediate layer, besides Ge QDs, a part of the Ge atoms is segregated by RTA at the HfO 2 NCs boundaries, while another part of the Ge atoms is present inside the HfO 2 lattice stabilizing the tetragonal/orthorhombic structure. The fabricated capacitors show a memory window of 3.8 ± 0.5 V and a capacitance-time characteristic with 14% capacitance decay in the first 3000-4000 s followed by a very slow capacitance decrease extrapolated to 50% after 10 years. This high performance is mainly due to the floating gate of a single layer of well separated Ge QDs in HfO 2 , distanced from the Si substrate by the tunnel oxide layer with a precise thickness.

Enhanced clonal burst size corrects an otherwise defective memory response by CD8+ recent thymic emigrants

PubMed Central

Deets, Katherine A.; Berkley, Amy M.; Bergsbaken, Tessa; Fink, Pamela J.

2016-01-01

The youngest peripheral T cells (recent thymic emigrants or RTEs) are functionally distinct from naïve T cells that have completed post-thymic maturation. We now assess the RTE memory response, and find that RTEs produced less granzyme B than their mature counterparts during infection, but proliferated more and therefore generated equivalent target killing in vivo. After infection, RTE numbers contracted less dramatically than those of mature T cells, but RTEs were delayed in their transition to central memory, displaying impaired expression of CD62L, IL-2, Eomesodermin, and CXCR4, which resulted in impaired bone marrow localization. RTE-derived and mature memory cells expanded equivalently during rechallenge, indicating the robust proliferative capacity of RTEs was maintained independently of central memory phenotype. Thus, the diminished effector function and delayed central memory differentiation of RTE-derived memory cells are counterbalanced by their increased proliferative capacity, driving the efficacy of the RTE response to that of mature T cells. PMID:26873989

Cutting Edge: Enhanced Clonal Burst Size Corrects an Otherwise Defective Memory Response by CD8+ Recent Thymic Emigrants.

PubMed

Deets, Katherine A; Berkley, Amy M; Bergsbaken, Tessa; Fink, Pamela J

2016-03-15

The youngest peripheral T cells (recent thymic emigrants [RTEs]) are functionally distinct from naive T cells that have completed postthymic maturation. We assessed the RTE memory response and found that RTEs produced less granzyme B than their mature counterparts during infection but proliferated more and, therefore, generated equivalent target killing in vivo. Postinfection, RTE numbers contracted less dramatically than those of mature T cells, but RTEs were delayed in their transition to central memory, displaying impaired expression of CD62L, IL-2, Eomesodermin, and CXCR4, which resulted in impaired bone marrow localization. RTE-derived and mature memory cells expanded equivalently during rechallenge, indicating that the robust proliferative capacity of RTEs was maintained independently of central memory phenotype. Thus, the diminished effector function and delayed central memory differentiation of RTE-derived memory cells are counterbalanced by their increased proliferative capacity, driving the efficacy of the RTE response to that of mature T cells. Copyright © 2016 by The American Association of Immunologists, Inc.

Organic memory device with self-assembly monolayered aptamer conjugated nanoparticles

NASA Astrophysics Data System (ADS)

Oh, Sewook; Kim, Minkeun; Kim, Yejin; Jung, Hunsang; Yoon, Tae-Sik; Choi, Young-Jin; Jung Kang, Chi; Moon, Myeong-Ju; Jeong, Yong-Yeon; Park, In-Kyu; Ho Lee, Hyun

2013-08-01

An organic memory structure using monolayered aptamer conjugated gold nanoparticles (Au NPs) as charge storage nodes was demonstrated. Metal-pentacene-insulator-semiconductor device was adopted for the non-volatile memory effect through self assembly monolayer of A10-aptamer conjugated Au NPs, which was formed on functionalized insulator surface with prostate-specific membrane antigen protein. The capacitance versus voltage (C-V) curves obtained for the monolayered Au NPs capacitor exhibited substantial flat-band voltage shift (ΔVFB) or memory window of 3.76 V under (+/-)7 V voltage sweep. The memory device format can be potentially expanded to a highly specific capacitive sensor for the aptamer-specific biomolecule detection.

Stochastic memory: Memory enhancement due to noise

NASA Astrophysics Data System (ADS)

Stotland, Alexander; di Ventra, Massimiliano

2012-01-01

There are certain classes of resistors, capacitors, and inductors that, when subject to a periodic input of appropriate frequency, develop hysteresis loops in their characteristic response. Here we show that the hysteresis of such memory elements can also be induced by white noise of appropriate intensity even at very low frequencies of the external driving field. We illustrate this phenomenon using a physical model of memory resistor realized by TiO2 thin films sandwiched between metallic electrodes and discuss under which conditions this effect can be observed experimentally. We also discuss its implications on existing memory systems described in the literature and the role of colored noise.

Multiferroic YCrO3 thin films grown on glass substrate: Resistive switching characteristics

NASA Astrophysics Data System (ADS)

Seo, Jeongdae; Ahn, Yoonho; Son, Jong Yeog

2016-01-01

Polycrystalline YCrO3 thin films were deposited on (111) Pt/Ta/glass substrates by pulsed laser deposition. The YCrO3 thin films exhibited good ferroelectric properties with remnant polarization of about 5 µC/cm2. Large leakage current was observed by I- V curve and ferroelectric hysteresis loop. The YCrO3 resistive random access memory (RRAM) capacitor showed unipolar switching behaviors with SET and RESET voltages higher than those of general NiO RRAM capacitors. [Figure not available: see fulltext.

Short-term memory of TiO2-based electrochemical capacitors: empirical analysis with adoption of a sliding threshold

NASA Astrophysics Data System (ADS)

Lim, Hyungkwang; Kim, Inho; Kim, Jin-Sang; Hwang, Cheol Seong; Jeong, Doo Seok

2013-09-01

Chemical synapses are important components of the large-scaled neural network in the hippocampus of the mammalian brain, and a change in their weight is thought to be in charge of learning and memory. Thus, the realization of artificial chemical synapses is of crucial importance in achieving artificial neural networks emulating the brain’s functionalities to some extent. This kind of research is often referred to as neuromorphic engineering. In this study, we report short-term memory behaviours of electrochemical capacitors (ECs) utilizing TiO2 mixed ionic-electronic conductor and various reactive electrode materials e.g. Ti, Ni, and Cr. By experiments, it turned out that the potentiation behaviours did not represent unlimited growth of synaptic weight. Instead, the behaviours exhibited limited synaptic weight growth that can be understood by means of an empirical equation similar to the Bienenstock-Cooper-Munro rule, employing a sliding threshold. The observed potentiation behaviours were analysed using the empirical equation and the differences between the different ECs were parameterized.

Organic memory capacitor device fabricated with Ag nanoparticles.

PubMed

Kim, Yo-Han; Jung, Sung Mok; Hu, Quanli; Kim, Yong-Sang; Yoon, Tae-Sik; Lee, Hyun Ho

2011-07-01

In this study, it is demonstrated that an organic memory structure using pentacene and citrate-stabilized silver nanoparticles (Ag NPs) as charge storage elements on dielectric SiO2 layer and silicon substrate. The Ag NPs were synthesized by thermal reduction method of silver trifluoroacetate with oleic acid. The synthesized Ag NPs were analyzed with high resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) for their crystalline structure. The capacitance versus voltage (C-V) curves obtained for the Ag NPs embedded capacitor exhibited flat-band voltage shifts, which demonstrated the presence of charge storages. The citrate-capping of the Ag NPs was confirmed by ultraviolet-visible (UV-VIS) and Fourier transformed infrared (FTIR) spectroscopy. With voltage sweeping of +/-7 V, a hysteresis loop having flatband voltage shift of 7.1 V was obtained. The hysteresis loop showed a counter-clockwise direction. In addition, electrical performance test for charge storage showed more than 10,000 second charge retention time. The device with Ag NPs can be applied to an organic memory device for flexible electronics.

Nitrided SrTiO3 as charge-trapping layer for nonvolatile memory applications

NASA Astrophysics Data System (ADS)

Huang, X. D.; Lai, P. T.; Liu, L.; Xu, J. P.

2011-06-01

Charge-trapping characteristics of SrTiO3 with and without nitrogen incorporation were investigated based on Al/Al2O3/SrTiO3/SiO2/Si (MONOS) capacitors. A Ti-silicate interlayer at the SrTiO3/SiO2 interface was confirmed by x-ray photoelectron spectroscopy and transmission electron microscopy. Compared with the MONOS capacitor with SrTiO3 as charge-trapping layer (CTL), the one with nitrided SrTiO3 showed a larger memory window (8.4 V at ±10 V sweeping voltage), higher P/E speeds (1.8 V at 1 ms +8 V) and better retention properties (charge loss of 38% after 104 s), due to the nitrided SrTiO3 film exhibiting higher dielectric constant, higher deep-level traps induced by nitrogen incorporation, and suppressed formation of Ti silicate between the CTL and SiO2 by nitrogen passivation.

Influence of Mixed Solvent on the Electrochemical Property of Hybrid Capacitor.

PubMed

Lee, Byunggwan; Yoon, J R

2015-11-01

The hybrid capacitors (2245 size, cylindrical type) were prepared by using activated carbon cathode and Li4Ti5O12 anode. In order to improve the cell operation at high temperature range, propylene carbonate (PC) was used in combination with acetonitrile (AN) with volume ratio of 7:3, 5:5, and 3:7, respectively. We investigated the electrochemical behavior of the hybrid capacitors that enabled cell operation with stability at high temperature. The organic electrolyte of hybrid capacitor containing PC and AN with a volume ratio 7:3 intended to exhibit highly reversible cycle performance with good capacity retention at 60 degrees C after 2200 cycles. From this study, it has been found that the very strong influence of the solvent nature on the characteristics of hybrid capacitor, and the difference in performance associated with the two solvents.

Highly Selective and Sensitive Self-Powered Glucose Sensor Based on Capacitor Circuit.

PubMed

Slaughter, Gymama; Kulkarni, Tanmay

2017-05-03

Enzymatic glucose biosensors are being developed to incorporate nanoscale materials with the biological recognition elements to assist in the rapid and sensitive detection of glucose. Here we present a highly sensitive and selective glucose sensor based on capacitor circuit that is capable of selectively sensing glucose while simultaneously powering a small microelectronic device. Multi-walled carbon nanotubes (MWCNTs) is chemically modified with pyrroloquinoline quinone glucose dehydrogenase (PQQ-GDH) and bilirubin oxidase (BOD) at anode and cathode, respectively, in the biofuel cell arrangement. The input voltage (as low as 0.25 V) from the biofuel cell is converted to a stepped-up power and charged to the capacitor to the voltage of 1.8 V. The frequency of the charge/discharge cycle of the capacitor corresponded to the oxidation of glucose. The biofuel cell structure-based glucose sensor synergizes the advantages of both the glucose biosensor and biofuel cell. In addition, this glucose sensor favored a very high selectivity towards glucose in the presence of competing and non-competing analytes. It exhibited unprecedented sensitivity of 37.66 Hz/mM.cm 2 and a linear range of 1 to 20 mM. This innovative self-powered glucose sensor opens new doors for implementation of biofuel cells and capacitor circuits for medical diagnosis and powering therapeutic devices.

Capacitors with low equivalent series resistance

NASA Technical Reports Server (NTRS)

Lakeman, Charles D. E. (Inventor); Fuge, Mark (Inventor); Fleig, Patrick Franz (Inventor)

2011-01-01

An electric double layer capacitor (EDLC) in a coin or button cell configuration having low equivalent series resistance (ESR). The capacitor comprises mesh or other porous metal that is attached via conducting adhesive to one or both the current collectors. The mesh is embedded into the surface of the adjacent electrode, thereby reducing the interfacial resistance between the electrode and the current collector, thus reducing the ESR of the capacitor.

Voltage-Dependent Charge Storage in Cladded Zn0.56Cd0.44Se Quantum Dot MOS Capacitors for Multibit Memory Applications

NASA Astrophysics Data System (ADS)

Khan, J.; Lingalugari, M.; Al-Amoody, F.; Jain, F.

2013-11-01

As conventional memories approach scaling limitations, new storage methods must be utilized to increase Si yield and produce higher on-chip memory density. Use of II-VI Zn0.56Cd0.44Se quantum dots (QDs) is compatible with epitaxial gate insulators such as ZnS-ZnMgS. Voltage-dependent charging effects in cladded Zn0.56Cd0.44Se QDs are presented in a conventional metal-oxide-semiconductor capacitor structure. Charge storage capabilities in Si and ZnMgS QDs have been reported by various researchers; this work is focused on II-VI material Zn0.56Cd0.44Se QDs nucleated using photoassisted microwave plasma metalorganic chemical vapor deposition. Using capacitance-voltage hysteresis characterization, the multistep charging and discharging capabilities of the QDs at room temperature are presented. Three charging states are presented within a 10 V charging voltage range. These characteristics exemplify discrete charge states in the QD layer, perfect for multibit, QD-functionalized high-density memory applications. Multiple charge states with low operating voltage provide device characteristics that can be used for multibit storage by allowing varying charges to be stored in a QD layer based on the applied "write" voltage.

High Energy Density Capacitor Testing for the AFWL SHIVA

DTIC Science & Technology

1981-06-01

eliminate units that are subject to premature failure mechanisms. Actual application in the large parallel capacitor barik will be less demanding than...then the 90% confidence interval for the full 576 capacitor SHIVA barik indicates that the first failure will occur at approximately 50 shots whiCh

Temperature responsive transmitter

NASA Technical Reports Server (NTRS)

Kleinberg, Leonard L. (Inventor)

1987-01-01

A temperature responsive transmitter is provided in which frequency varies linearly with temperature. The transmitter includes two identically biased transistors connected in parallel. A capacitor, which reflects into the common bases to generate negative resistance effectively in parallel with the capacitor, is connected to the common emitters. A crystal is effectively in parallel with the capacitor and the negative resistance. Oscillations occur if the magnitude of the absolute value of the negative resistance is less than the positive resistive impedance of the capacitor and the inductance of the crystal. The crystal has a large linear temperature coefficient and a resonant frequency which is substantially less than the gain-bandwidth product of the transistors to ensure that the crystal primarily determines the frequency of oscillation. A high-Q tank circuit having an inductor and a capacitor is connected to the common collectors to increase the collector current flow which in turn enhances the radiation of the oscillator frequency by the inductor.

Effects of ion insertion on cycling performance of miniaturized electrochemical capacitor of carbon nanotubes array.

PubMed

Tsai, Dah-Shyang; Chang, Chuan-hua; Chiang, Wei-Wen; Lee, Kuei-Yi; Huang, Ying-Sheng

2014-10-24

Capacity degradation and ion insertion of a miniaturized electrochemical capacitor are studied using ionic liquid [EMI] [TFSI] as the electrolyte. This capacitor is featured with two comb-like electrodes of vertical carbon nanotubes, ∼70 μm in height and 20 μm in interelectrode gap. We quantify the levels of ion insertion damage with Raman spectroscopy after the electrode experiences 120 consecutive voltammetric cycles to various potential limits. Distinct structural damage emerges due to [EMI] when the negative potential reaches -1.7 V, and those due to [TFSI] arise when the positive potential reaches 1.7 V vs. RHE. Judging from the peak broadenings, [EMI] is more detrimental than [TFSI]. When the voltage window ΔU is set as less than or equal to 2.8 V, both electrode potentials are within the two intercalation limits, little or no decay is observed in 10(4) charge/discharge cycles. When ΔU is 3.4 V, the positive potential exceeds the upper limit, but the negative potential stays within the lower limit, the cell capacitance decreases moderately. When ΔU increases to 3.8 V, both electrodes suffer from damages because of exceeding the intercalation limits. And the cell capacitance decreases substantially, even leading to a premature failure.

Two-Dimensional Vanadium Carbide (MXene) as Positive Electrode for Sodium-Ion Capacitors.

PubMed

Dall'Agnese, Yohan; Taberna, Pierre-Louis; Gogotsi, Yury; Simon, Patrice

2015-06-18

Ion capacitors store energy through intercalation of cations into an electrode at a faster rate than in batteries and within a larger potential window. These devices reach a higher energy density compared to electrochemical double layer capacitor. Li-ion capacitors are already produced commercially, but the development of Na-ion capacitors is hindered by lack of materials that would allow fast intercalation of Na-ions. Here we investigated the electrochemical behavior of 2D vanadium carbide, V2C, from the MXene family. We investigated the mechanism of Na intercalation by XRD and achieved capacitance of ∼100 F/g at 0.2 mV/s. We assembled a full cell with hard carbon as negative electrode, a known anode material for Na ion batteries, and achieved capacity of 50 mAh/g with a maximum cell voltage of 3.5 V.

Leakage Currents in Low-Voltage PME and BME Ceramic Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2015-01-01

Introduction of BME capacitors to high-reliability electronics as a replacement for PME capacitors requires better understanding of changes in performance and reliability of MLCCs to set justified screening and qualification requirements. In this work, absorption and leakage currents in various lots of commercial and military grade X7R MLCCs rated to 100V and less have been measured to reveal difference in behavior of PME and BME capacitors in a wide range of voltages and temperatures. Degradation of leakage currents and failures in virgin capacitors and capacitors with introduced cracks has been studied at different voltages and temperatures during step stress highly accelerated life testing. Mechanisms of charge absorption, conduction and degradation have been discussed and a failure model in capacitors with defects suggested.

Ion conducting organic/inorganic hybrid polymers

NASA Technical Reports Server (NTRS)

Meador, Maryann B. (Inventor); Kinder, James D. (Inventor)

2010-01-01

This invention relates to a series of organic/inorganic hybrid polymers that are easy to fabricate into dimensionally stable films with good ion-conductivity over a wide range of temperatures for use in a variety of applications. The polymers are prepared by the reaction of amines, preferably diamines and mixtures thereof with monoamines with epoxy-functionalized alkoxysilanes. The products of the reaction are polymerized by hydrolysis of the alkoxysilane groups to produce an organic-containing silica network. Suitable functionality introduced into the amine and alkoxysilane groups produce solid polymeric membranes which conduct ions for use in fuel cells, high-performance solid state batteries, chemical sensors, electrochemical capacitors, electro-chromic windows or displays, analog memory devices and the like.

A 800 kV compact peaking capacitor for nanosecond generator.

PubMed

Jia, Wei; Chen, Zhiqiang; Tang, Junping; Chen, Weiqing; Guo, Fan; Sun, Fengrong; Li, Junna; Qiu, Aici

2014-09-01

An extremely compact high voltage peaking capacitor is developed. The capacitor has a pancake structure with a diameter of 315 mm, a thickness of 59 mm, and a mass of 6.1 kg. The novel structural design endows the capacitor with a better mechanical stability and reliability under hundreds of kilovolts pulse voltage and an inner gas pressure of more than 1.5 MPa. The theoretical value of the capacitor self-inductance is near to 17 nH. Proved by series of electrical experiments, the capacitor can endure a high-voltage pulse with a rise time of about 20 ns, a half-width duration of around 25 ns, and an amplitude of up to 800 kV in a single shot model. When the capacitor was used in an electromagnetic pulse simulator as a peaking capacitor, the rise time of the voltage pulse can be reduced from 20 ns to less than 3 ns. The practical value of the capacitor's inductance deduced from the experimental date is no more than 25 nH.

Preparation and electrical properties of Cr 2O 3 gate insulator embedded with Fe dot

NASA Astrophysics Data System (ADS)

Yokota, Takeshi; Kuribayashi, Takaaki; Murata, Shotaro; Gomi, Manabu

2008-09-01

We investigated the electrical properties of a metal (Au)/insulator (magneto-electric materials: Cr 2O 3)/magnetic materials (Fe)/tunnel layer (Cr 2O 3)/semiconductor (Si) capacitor. This capacitor shows the typical capacitance-voltage ( C- V) properties of an Si-MIS capacitor with hysteresis depending on the Fe dispersibility which is determined by the deposition condition. The C- V curve of the only sample having a 0.5 nm Fe layer was seen to have a hysteresis window with a clockwise trace, indicating that electrons have been injected into the ultra-thin Fe layer. The samples having Fe layers of other thicknesses show a counterclockwise trace, which indicates that the film has mobile ionic charges due to the dispersed Fe. These results indicated that the charge-injection site, which works as a memory, in the Cr 2O 3 can be prepared by Fe insertion, which is deposited using well-controlled conditions. The results also revealed the possibility of an MIS capacitor containing both ferromagnetic materials and an ME insulating layer in a single system.

Protecting and rescuing the effectors: roles of differentiation and survival in the control of memory T cell development

PubMed Central

Kurtulus, Sema; Tripathi, Pulak; Hildeman, David A.

2013-01-01

Vaccines, arguably the single most important intervention in improving human health, have exploited the phenomenon of immunological memory. The elicitation of memory T cells is often an essential part of successful long-lived protective immunity. Our understanding of T cell memory has been greatly aided by the development of TCR Tg mice and MHC tetrameric staining reagents that have allowed the precise tracking of antigen-specific T cell responses. Indeed, following acute infection or immunization, naïve T cells undergo a massive expansion culminating in the generation of a robust effector T cell population. This peak effector response is relatively short-lived and, while most effector T cells die by apoptosis, some remain and develop into memory cells. Although the molecular mechanisms underlying this cell fate decision remain incompletely defined, substantial progress has been made, particularly with regards to CD8+ T cells. For example, the effector CD8+ T cells generated during a response are heterogeneous, consisting of cells with more or less potential to develop into full-fledged memory cells. Development of CD8+ T cell memory is regulated by the transcriptional programs that control the differentiation and survival of effector T cells. While the type of antigenic stimulation and level of inflammation control effector CD8+ T cell differentiation, availability of cytokines and their ability to control expression and function of Bcl-2 family members governs their survival. These distinct differentiation and survival programs may allow for finer therapeutic intervention to control both the quality and quantity of CD8+ T cell memory. Effector to memory transition of CD4+ T cells is less well characterized than CD8+ T cells, emerging details will be discussed. This review will focus on the recent progress made in our understanding of the mechanisms underlying the development of T cell memory with an emphasis on factors controlling survival of effector T cells. PMID:23346085

Development and experimental study of oil-free capacitor module for plasma focus device

NASA Astrophysics Data System (ADS)

Sharma, Ravindra Kumar; Sharma, Archana

2017-03-01

This development is concerned with the compact capacitor module for a plasma focus device. Oil-free, non-standard geometry capacitors are designed and developed for high current delivery in sub-microseconds time. Metalized dielectric film based pulse capacitor becomes progressively less viable at currents above 10 kA. It is due to reliability and energy scaling difficulties, based on effects such as vaporization, high resistivity, and end connection. Bipolar electrolytic capacitors are also not preferred due to their limited life and comparatively low peak current delivery. Bi-axially oriented polypropylene (BOPP) film with extended aluminum foil is a combination to deliver moderately high power. But, electrically weak points, relative permittivity, and the edge gap margins have made its adoption difficult. A concept has been developed in lab for implementing the above combination in a less complex and costly manner. This paper concerns the development and testing process techniques for quite different hollow cylindrical, oil-free capacitors (4 μ F , 10 kV, 20 nH). Shot life of 1000 has been experimentally performed on the test bed at its rated energy density level. The technological methods and engineering techniques are now available and utilized for manufacturing and testing of BOPP film based oil-free capacitors.

Development and experimental study of oil-free capacitor module for plasma focus device.

PubMed

Sharma, Ravindra Kumar; Sharma, Archana

2017-03-01

This development is concerned with the compact capacitor module for a plasma focus device. Oil-free, non-standard geometry capacitors are designed and developed for high current delivery in sub-microseconds time. Metalized dielectric film based pulse capacitor becomes progressively less viable at currents above 10 kA. It is due to reliability and energy scaling difficulties, based on effects such as vaporization, high resistivity, and end connection. Bipolar electrolytic capacitors are also not preferred due to their limited life and comparatively low peak current delivery. Bi-axially oriented polypropylene (BOPP) film with extended aluminum foil is a combination to deliver moderately high power. But, electrically weak points, relative permittivity, and the edge gap margins have made its adoption difficult. A concept has been developed in lab for implementing the above combination in a less complex and costly manner. This paper concerns the development and testing process techniques for quite different hollow cylindrical, oil-free capacitors (4 μF, 10 kV, 20 nH). Shot life of 1000 has been experimentally performed on the test bed at its rated energy density level. The technological methods and engineering techniques are now available and utilized for manufacturing and testing of BOPP film based oil-free capacitors.

Note: Compact high voltage pulse transformer made using a capacitor bank assembled in the shape of primary.

PubMed

Shukla, Rohit; Banerjee, Partha; Sharma, Surender K; Das, Rashmita; Deb, Pankaj; Prabaharan, T; Das, Basanta; Adhikary, Biswajit; Verma, Rishi; Shyam, Anurag

2011-10-01

The experimental results of an air-core pulse transformer are presented, which is very compact (<10 Kg in weight) and is primed by a capacitor bank that is fabricated in such a way that the capacitor bank with its switch takes the shape of single-turn rectangular shaped primary of the transformer. A high voltage capacitor assembly (pulse-forming-line capacitor, PFL) of 5.1 nF is connected with the secondary of transformer. The transformer output voltage is 160 kV in its second peak appearing in less than 2 μS from the beginning of the capacitor discharge. The primary capacitor bank can be charged up to a maximum of 18 kV, with the voltage delivery of 360 kV in similar capacitive loads.

Electronic transport in two-dimensional high dielectric constant nanosystems

DOE PAGES

Ortuño, M.; Somoza, A. M.; Vinokur, V. M.; ...

2015-04-10

There has been remarkable recent progress in engineering high-dielectric constant two dimensional (2D) materials, which are being actively pursued for applications in nanoelectronics in capacitor and memory devices, energy storage, and high-frequency modulation in communication devices. Yet many of the unique properties of these systems are poorly understood and remain unexplored. Here we report a numerical study of hopping conductivity of the lateral network of capacitors, which models two-dimensional insulators, and demonstrate that 2D long-range Coulomb interactions lead to peculiar size effects. We find that the characteristic energy governing electronic transport scales logarithmically with either system size or electrostatic screeningmore » length depending on which one is shorter. Our results are relevant well beyond their immediate context, explaining, for example, recent experimental observations of logarithmic size dependence of electric conductivity of thin superconducting films in the critical vicinity of superconductor-insulator transition where a giant dielectric constant develops. Our findings mark a radical departure from the orthodox view of conductivity in 2D systems as a local characteristic of materials and establish its macroscopic global character as a generic property of high-dielectric constant 2D nanomaterials.« less

Improved memory characteristics by NH3-nitrided GdO as charge storage layer for nonvolatile memory applications

NASA Astrophysics Data System (ADS)

Liu, L.; Xu, J. P.; Ji, F.; Chen, J. X.; Lai, P. T.

2012-07-01

Charge-trapping memory capacitor with nitrided gadolinium oxide (GdO) as charge storage layer (CSL) is fabricated, and the influence of post-deposition annealing in NH3 on its memory characteristics is investigated. Transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction are used to analyze the cross-section and interface quality, composition, and crystallinity of the stack gate dielectric, respectively. It is found that nitrogen incorporation can improve the memory window and achieve a good trade-off among the memory properties due to NH3-annealing-induced reasonable distribution profile of a large quantity of deep-level bulk traps created in the nitrided GdO film and reduction of shallow traps near the CSL/SiO2 interface.

A Magnesium-Activated Carbon Hybrid Capacitor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoo, HD; Shterenberg, I; Gofer, Y

2013-12-11

Prototype cells of hybrid capacitor were developed, comprising activated carbon (AC) cloth and magnesium (Mg) foil as the positive and negative electrodes, respectively. The electrolyte solution included ether solvent (TBF) and a magnesium organo-halo-aluminate complex 0.25 M Mg2Cl3+-Ph2AlCl2-. In this solution Mg can be deposited/dissolved reversibly for thousands of cycles with high reversibility (100% cycling efficiency). The main barrier for integrating porous AC electrodes with this electrolyte solution was the saturation of the pores with the large ions in the AC prior to reaching the potential limit. This is due to the existence of bulky Mg and Al based ionicmore » complexes consisting Cl, alkyl or aryl (R), and THF ligands. This problem was resolved by adding 0.5 M of lithium chloride (LiCl), thus introducing smaller ionic species to the solution. This Mg hybrid capacitor system demonstrated a stable cycle performance for many thousands of cycles with a specific capacitance of 90 Fg(-1) for the AC positive electrodes along a potential range of 2.4 V. (C) 2014 The Electrochemical Society. All rights reserved.« less

A fuzzy discrete harmony search algorithm applied to annual cost reduction in radial distribution systems

NASA Astrophysics Data System (ADS)

Ameli, Kazem; Alfi, Alireza; Aghaebrahimi, Mohammadreza

2016-09-01

Similarly to other optimization algorithms, harmony search (HS) is quite sensitive to the tuning parameters. Several variants of the HS algorithm have been developed to decrease the parameter-dependency character of HS. This article proposes a novel version of the discrete harmony search (DHS) algorithm, namely fuzzy discrete harmony search (FDHS), for optimizing capacitor placement in distribution systems. In the FDHS, a fuzzy system is employed to dynamically adjust two parameter values, i.e. harmony memory considering rate and pitch adjusting rate, with respect to normalized mean fitness of the harmony memory. The key aspect of FDHS is that it needs substantially fewer iterations to reach convergence in comparison with classical discrete harmony search (CDHS). To the authors' knowledge, this is the first application of DHS to specify appropriate capacitor locations and their best amounts in the distribution systems. Simulations are provided for 10-, 34-, 85- and 141-bus distribution systems using CDHS and FDHS. The results show the effectiveness of FDHS over previous related studies.

Model Predictive Control techniques with application to photovoltaic, DC Microgrid, and a multi-sourced hybrid energy system

NASA Astrophysics Data System (ADS)

Shadmand, Mohammad Bagher

Renewable energy sources continue to gain popularity. However, two major limitations exist that prevent widespread adoption: availability and variability of the electricity generated and the cost of the equipment. The focus of this dissertation is Model Predictive Control (MPC) for optimal sized photovoltaic (PV), DC Microgrid, and multi-sourced hybrid energy systems. The main considered applications are: maximum power point tracking (MPPT) by MPC, droop predictive control of DC microgrid, MPC of grid-interaction inverter, MPC of a capacitor-less VAR compensator based on matrix converter (MC). This dissertation firstly investigates a multi-objective optimization technique for a hybrid distribution system. The variability of a high-penetration PV scenario is also studied when incorporated into the microgrid concept. Emerging (PV) technologies have enabled the creation of contoured and conformal PV surfaces; the effect of using non-planar PV modules on variability is also analyzed. The proposed predictive control to achieve maximum power point for isolated and grid-tied PV systems speeds up the control loop since it predicts error before the switching signal is applied to the converter. The low conversion efficiency of PV cells means we want to ensure always operating at maximum possible power point to make the system economical. Thus the proposed MPPT technique can capture more energy compared to the conventional MPPT techniques from same amount of installed solar panel. Because of the MPPT requirement, the output voltage of the converter may vary. Therefore a droop control is needed to feed multiple arrays of photovoltaic systems to a DC bus in microgrid community. Development of a droop control technique by means of predictive control is another application of this dissertation. Reactive power, denoted as Volt Ampere Reactive (VAR), has several undesirable consequences on AC power system network such as reduction in power transfer capability and increase in transmission loss if not controlled appropriately. Inductive loads which operate with lagging power factor consume VARs, thus load compensation techniques by capacitor bank employment locally supply VARs needed by the load. Capacitors are highly unreliable components due to their failure modes and aging inherent. Approximately 60% of power electronic devices failure such as voltage-source inverter based static synchronous compensator (STATCOM) is due to the use of aluminum electrolytic DC capacitors. Therefore, a capacitor-less VAR compensation is desired. This dissertation also investigates a STATCOM capacitor-less reactive power compensation that uses only inductors combined with predictive controlled matrix converter.

Cancer immunotherapy and immunological memory.

PubMed

Murata, Kenji; Tsukahara, Tomohide; Torigoe, Toshihiko

2016-01-01

Human immunological memory is the key distinguishing hallmark of the adaptive immune system and plays an important role in the prevention of morbidity and the severity of infection. The differentiation system of T cell memory has been clarified using mouse models. However, the human T cell memory system has great diversity induced by natural antigens derived from many pathogens and tumor cells throughout life, and profoundly differs from the mouse memory system constructed using artificial antigens and transgenic T cells. We believe that only human studies can elucidate the human immune system. The importance of immunological memory in cancer immunotherapy has been pointed out, and the trafficking properties and long-lasting anti-tumor capacity of memory T cells play a crucial role in the control of malignant tumors. Adoptive cell transfer of less differentiated T cells has consistently demonstrated superior anti-tumor capacity relative to more differentiated T cells. Therefore, a human T cell population with the characteristics of stem cell memory is thought to be attractive for peptide vaccination and adoptive cell transfer. A novel human memory T cell population that we have identified is closer to the naive state than previous memory T cells in the T cell differentiation lineage, and has the characteristics of stem-like chemoresistance. Here we introduce this novel population and describe the fundamentals of immunological memory in cancer immunotherapy.

Tantalum capacitor behavior under fast transient overvoltages. [circuit protection against lightning

NASA Technical Reports Server (NTRS)

Zill, J. A.; Castle, K. D.

1974-01-01

Tantalum capacitors were tested to determine failure time when subjected to short-duration, high-voltage surges caused by lightning strikes. Lightning is of concern to NASA because of possible damage to critical spacecraft circuits. The test was designed to determine the minimum time for tantalum capacitor failure and the amount of overvoltage a capacitor could survive, without permanent damage, in 100 microseconds. All tested exhibited good recovery from the transient one-shot pulses with no failure at any voltage, forward or reverse, in less than 25 microseconds.

Infrared system for monitoring movement of objects

DOEpatents

Valentine, Kenneth H.; Falter, Diedre D.; Falter, Kelly G.

1991-01-01

A system for monitoring moving objects, such as the flight of honeybees and other insects, using a pulsed laser light source. This system has a self-powered micro-miniaturized transmitting unit powered, in the preferred embodiment, with an array solar cells. This transmitting unit is attached to the object to be monitored. These solar cells provide current to a storage energy capacitor to produce, for example, five volts for the operation of the transmitter. In the simplest embodiment, the voltage on the capacitor operates a pulse generator to provide a pulsed energizing signal to one or more very small laser diodes. The pulsed light is then received at a receiving base station using substantially standard means which converts the light to an electrical signal for processing in a microprocessor to create the information as to the movement of the object. In the case of a unit for monitoring honeybees and other insects, the transmitting unit weighs less than 50 mg, and has a size no larger than 1.times.3.times.5 millimeters. Also, the preferred embodiment provides for the coding of the light to uniquely identify the particular transmitting unit that is being monitored. A "wake-up" circuit is provided in the preferred embodiment whereby there is no transmission until the voltage on the capacitor has exceeded a pre-set threshold. Various other uses of the motion-detection system are described.

Infrared system for monitoring movement of objects

DOEpatents

Valentine, K.H.; Falter, D.D.; Falter, K.G.

1991-04-30

A system is described for monitoring moving objects, such as the flight of honeybees and other insects, using a pulsed laser light source. This system has a self-powered micro-miniaturized transmitting unit powered, in the preferred embodiment, with an array of solar cells. This transmitting unit is attached to the object to be monitored. These solar cells provide current to a storage energy capacitor to produce, for example, five volts for the operation of the transmitter. In the simplest embodiment, the voltage on the capacitor operates a pulse generator to provide a pulsed energizing signal to one or more very small laser diodes. The pulsed light is then received at a receiving base station using substantially standard means which converts the light to an electrical signal for processing in a microprocessor to create the information as to the movement of the object. In the case of a unit for monitoring honeybees and other insects, the transmitting unit weighs less than 50 mg, and has a size no larger than 1[times]3[times]5 millimeters. Also, the preferred embodiment provides for the coding of the light to uniquely identify the particular transmitting unit that is being monitored. A wake-up' circuit is provided in the preferred embodiment whereby there is no transmission until the voltage on the capacitor has exceeded a pre-set threshold. Various other uses of the motion-detection system are described. 4 figures.

Computer modeling of batteries from nonlinear circuit elements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Waaben, S.; Dyer, C.K.; Federico, J.

1985-06-01

Circuit analogs for a single battery cell have previously been composed of resistors, capacitors, and inductors. This work introduces a nonlinear circuit model for cell behavior. The circuit is configured around the PIN junction diode, whose charge-storage behavior has features similar to those of electrochemical cells. A user-friendly integrated circuit simulation computer program has reproduced a variety of complex cell responses including electrica isolation effects causing capacity loss, as well as potentiodynamic peaks and discharge phenomena hitherto thought to be thermodynamic in origin. However, in this work, they are shown to be simply due to spatial distribution of stored chargemore » within a practical electrode.« less

Device Demonstration

DTIC Science & Technology

2006-12-31

Reset (Write a Ŕ") * Apply current to melt memory element * Cool quickly to " freeze -in" amorphous state * Amorphous state = high resistance = low...It consists of a 6 jtF storage capacitor switched by 3 series thyristors. The module output is connected to the x-ray source through a ferrite

Capacitor bonding techniques and reliability. [thermal cycling tests

NASA Technical Reports Server (NTRS)

Kinser, D. L.; Graff, S. M.; Allen, R. V.; Caruso, S. V.

1974-01-01

The effect of thermal cycling on the mechanical failure of bonded ceramic chip capacitors mounted on alumina substrates is studied. It is shown that differential thermal expansion is responsible for the cumulative effects which lead to delayed failure of the capacitors. Harder or higher melting solders are found to be less susceptible to thermal cycling effects, although they are more likely to fail during initial processing operations.

Ceramic capacitor exhibiting graceful failure by self-clearing, method for fabricating self-clearing capacitor

DOEpatents

Kaufman, David Y [Chicago, IL; Saha, Sanjib [Santa Clara, CA

2006-08-29

A short-resistant capacitor comprises an electrically conductive planar support substrate having a first thickness, a ceramic film deposited over the support substrate, thereby defining a ceramic surface; and a metallic film deposited over the ceramic surface, said film having a second thickness which is less than the first thickness and which is between 0.01 and 0.1 microns.

New modeling method for the dielectric relaxation of a DRAM cell capacitor

NASA Astrophysics Data System (ADS)

Choi, Sujin; Sun, Wookyung; Shin, Hyungsoon

2018-02-01

This study proposes a new method for automatically synthesizing the equivalent circuit of the dielectric relaxation (DR) characteristic in dynamic random access memory (DRAM) without frequency dependent capacitance measurement. Charge loss due to DR can be observed by a voltage drop at the storage node and this phenomenon can be analyzed by an equivalent circuit. The Havariliak-Negami model is used to accurately determine the electrical characteristic parameters of an equivalent circuit. The DRAM sensing operation is performed in HSPICE simulations to verify this new method. The simulation demonstrates that the storage node voltage drop resulting from DR and the reduction in the sensing voltage margin, which has a critical impact on DRAM read operation, can be accurately estimated using this new method.

Scalable ferroelectric MOS capacitors comprised of single crystalline SrZrxTi1-xO3 on Ge.

NASA Astrophysics Data System (ADS)

Moghadam, Reza; Xiao, Z.-Y.; Ahmadi-Majlan, K.; Grimley, E.; Ong, P. V.; Lebeau, J. M.; Chambers, S. A.; Hong, X.; Sushko, P.; Ngai, J. H.

The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to field-effect devices that require very little power to operate, or that possess both logic and memory functionalities. The development of metal-oxide-semiconductor (MOS) capacitors in which the polarization of a ferroelectric gate is coupled to the surface potential of a semiconducting channel is essential in order to realize such field-effect devices. Here we demonstrate that scalable, ferroelectric MOS capacitors can be realized using single crystalline SrZrxTi1-xO3 (x = 0.7) that has been epitaxially grown on Ge. Single crystalline SrZrxTi1-xO3 exhibits characteristics that are ideal for a ferroelectric gate material, namely, a type-I band offset with respect to Ge, large coercive fields and polarization that can be enhanced with electric field. The latter characteristic stems from the relaxor nature of SrZrxTi1-xO3. These properties enable MOS capacitors with 5 nm thick SrZrxTi1-xO3 layers to exhibit a nearly 2 V wide hysteretic window in the capacitance-voltage characteristics. The realization of ferroelectric MOS capacitors with technologically relevant gate thicknesses opens the pathway to practical field effect devices. NSF DMR 1508530.

Optimal Capacitor Bank Capacity and Placement in Distribution Systems with High Distributed Solar Power Penetration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hodge, Brian S; Mather, Barry A; Cho, Gyu-Jung

Capacitor banks have been generally installed and utilized to support distribution voltage during period of higher load or on longer, higher impedance, feeders. Installations of distributed energy resources in distribution systems are rapidly increasing, and many of these generation resources have variable and uncertain power output. These generators can significantly change the voltage profile across a feeder, and therefore when a new capacitor bank is needed analysis of optimal capacity and location of the capacitor bank is required. In this paper, we model a particular distribution system including essential equipment. An optimization method is adopted to determine the best capacitymore » and location sets of the newly installed capacitor banks, in the presence of distributed solar power generation. Finally we analyze the optimal capacitor banks configuration through the optimization and simulation results.« less

Switching properties of SrRuO3/Pb(Zr0.4Ti0.6)O3/SrRuO3 capacitor grown on Cu-coated Si substrate measured at various temperatures

NASA Astrophysics Data System (ADS)

Chen, J. H.; Liu, B. T.; Li, C. R.; Li, X. H.; Dai, X. H.; Guo, J. X.; Zhou, Y.; Wang, Y. L.; Zhao, Q. X.; Ma, L. X.

2014-09-01

SrRuO3(SRO)/Ni-Al/Cu/Ni-Al/SiO2/Si heterostructures annealed at various temperatures are found to remain intact after 750 \\circ\\text{C} annealing. Moreover, a SRO/Pb(Zr0.4Ti0.6)O3 (PZT)/SRO capacitor is grown on a Ni-Al/Cu/Ni-Al/SiO2/Si heterostructure, which is tested up to 100 \\circ\\text{C} to investigate the reliability of the memory capacitor. It is found that besides the good fatigue resistance and retention characteristic, the capacitor, measured at 5 V and room temperature, possesses a large remnant polarization of 25.0 μ \\text{C/cm}2 and a small coercive voltage of 0.83 V, respectively. Its dominant leakage current behavior satisfies the space-charge-limited conduction at various temperatures. Very clear interfaces can be observed from the cross-sectional images of transmission electron microscopy, indicating that the Ni-Al film can be used as a diffusion barrier layer for copper metallization as well as a conducting barrier layer between copper and oxide layer.

Protective Capacity of Memory CD8+ T Cells is Dictated by Antigen Exposure History and Nature of the Infection

PubMed Central

Nolz, Jeffrey C.; Harty, John T.

2011-01-01

SUMMARY Infection or vaccination confers heightened resistance to pathogen re-challenge due to quantitative and qualitative differences between naïve and primary memory T cells. Herein, we show that secondary (boosted) memory CD8+ T cells were better than primary memory CD8+ T cells in controlling some, but not all acute infections with diverse pathogens. However, secondary memory CD8+ T cells were less efficient than an equal number of primary memory cells at preventing chronic LCMV infection and are more susceptible to functional exhaustion. Importantly, localization of memory CD8+ T cells within lymph nodes, which is reduced by antigen re-stimulation, was critical for both viral control in lymph nodes and for the sustained CD8+ T cell response required to prevent chronic LCMV infection. Thus, repeated antigen-stimulation shapes memory CD8+ T cell populations to either enhance or decrease per cell protective immunity in a pathogen-specific manner, a concept of importance in vaccine design against specific diseases. PMID:21549619

Norbornylene-based polymer systems for dielectric applications

DOEpatents

Dirk, Shawn M [Albuquerque, NM; Wheeler, David R [Albuquerque, NM

2012-07-17

A capacitor having at least one electrode pair being separated by a dielectric component, with the dielectric component being made of a polymer such as a norbornylene-containing polymer with a dielectric constant greater than 3 and a dissipation factor less than 0.1 where the capacitor has an operating temperature greater than 100.degree. C. and less than 170.degree. C.

Cellulose triacetate, thin film dielectric capacitor

NASA Technical Reports Server (NTRS)

Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

1995-01-01

Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

Cellulose triacetate, thin film dielectric capacitor

NASA Technical Reports Server (NTRS)

Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

1993-01-01

Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

Floating gate memory with charge storage dots array formed by Dps protein modified with site-specific binding peptides

NASA Astrophysics Data System (ADS)

Kamitake, Hiroki; Uenuma, Mutsunori; Okamoto, Naofumi; Horita, Masahiro; Ishikawa, Yasuaki; Yamashita, Ichro; Uraoka, Yukiharu

2015-05-01

We report a nanodot (ND) floating gate memory (NFGM) with a high-density ND array formed by a biological nano process. We utilized two kinds of cage-shaped proteins displaying SiO2 binding peptide (minTBP-1) on their outer surfaces: ferritin and Dps, which accommodate cobalt oxide NDs in their cavities. The diameters of the cobalt NDs were regulated by the cavity sizes of the proteins. Because minTBP-1 is strongly adsorbed on the SiO2 surface, high-density cobalt oxide ND arrays were obtained by a simple spin coating process. The densities of cobalt oxide ND arrays based on ferritin and Dps were 6.8 × 1011 dots cm-2 and 1.2 × 1012 dots cm-2, respectively. After selective protein elimination and embedding in a metal-oxide-semiconductor (MOS) capacitor, the charge capacities of both ND arrays were evaluated by measuring their C-V characteristics. The MOS capacitor embedded with the Dps ND array showed a wider memory window than the device embedded with the ferritin ND array. Finally, we fabricated an NFGM with a high-density ND array based on Dps, and confirmed its competent writing/erasing characteristics and long retention time.

Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide

NASA Astrophysics Data System (ADS)

Ekström, Mattias; Khartsev, Sergiy; Östling, Mikael; Zetterling, Carl-Mikael

2017-07-01

4H-SiC electronics can operate at high temperature (HT), e.g., 300°C to 500°C, for extended times. Systems using sensors and amplifiers that operate at HT would benefit from microcontrollers which can also operate at HT. Microcontrollers require nonvolatile memory (NVM) for computer programs. In this work, we demonstrate the possibility of integrating ferroelectric vanadium-doped bismuth titanate (BiTV) thin films on 4H-SiC for HT memory applications, with BiTV ferroelectric capacitors providing memory functionality. Film deposition was achieved by laser ablation on Pt (111)/TiO2/4H-SiC substrates, with magnetron-sputtered Pt used as bottom electrode and thermally evaporated Au as upper contacts. Film characterization by x-ray diffraction analysis revealed predominately (117) orientation. P- E hysteresis loops measured at room temperature showed maximum 2 P r of 48 μC/cm2, large enough for wide read margins. P- E loops were measurable up to 450°C, with losses limiting measurements above 450°C. The phase-transition temperature was determined to be about 660°C from the discontinuity in dielectric permittivity, close to what is achieved for ceramics. These BiTV ferroelectric capacitors demonstrate potential for use in HT NVM applications for SiC digital electronics.

Giant Electroresistive Ferroelectric Diode on 2DEG

PubMed Central

Kim, Shin-Ik; Jin Gwon, Hyo; Kim, Dai-Hong; Keun Kim, Seong; Choi, Ji-Won; Yoon, Seok-Jin; Jung Chang, Hye; Kang, Chong-Yun; Kwon, Beomjin; Bark, Chung-Wung; Hong, Seong-Hyeon; Kim, Jin-Sang; Baek, Seung-Hyub

2015-01-01

Manipulation of electrons in a solid through transmitting, storing, and switching is the fundamental basis for the microelectronic devices. Recently, the electroresistance effect in the ferroelectric capacitors has provided a novel way to modulate the electron transport by polarization reversal. Here, we demonstrate a giant electroresistive ferroelectric diode integrating a ferroelectric capacitor into two-dimensional electron gas (2DEG) at oxide interface. As a model system, we fabricate an epitaxial Au/Pb(Zr0.2Ti0.8)O3/LaAlO3/SrTiO3 heterostructure, where 2DEG is formed at LaAlO3/SrTiO3 interface. This device functions as a two-terminal, non-volatile memory of 1 diode-1 resistor with a large I+/I− ratio (>108 at ±6 V) and Ion/Ioff ratio (>107). This is attributed to not only Schottky barrier modulation at metal/ferroelectric interface by polarization reversal but also the field-effect metal-insulator transition of 2DEG. Moreover, using this heterostructure, we can demonstrate a memristive behavior for an artificial synapse memory, where the resistance can be continuously tuned by partial polarization switching, and the electrons are only unidirectionally transmitted. Beyond non-volatile memory and logic devices, our results will provide new opportunities to emerging electronic devices such as multifunctional nanoelectronics and neuromorphic electronics. PMID:26014446

Guidelines for Selection, Screening and Qualification of Low-Voltage Commercial Multilayer Ceramic Capacitors for Space Programs

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2012-01-01

This document has been developed in the course of NASA Electronic Parts and Packaging (NEPP) program and is not an official endorsement of the insertion of commercial capacitors in space programs or an established set of requirements for their testing. The purpose of this document is to suggest possible ways for selection, screening, and qualification of commercial capacitors for NASA projects and open discussions in the parts engineering community related to the use of COTS ceramic capacitors. This guideline is applicable to commercial surface mount chip, simple parallel plate design, multi-layer ceramic capacitors (MLCCs) rated to voltages of 100V and less. Parts with different design, e.g. low inductance ceramic capacitors (LICA), land grid array (LGA) etc., might need additional testing and tailoring of the requirements described in this document. Although the focus of this document is on commercial MLCCs, many procedures discussed below would be beneficial for military-grade capacitors

Pathogen stimulation history impacts donor-specific CD8+ T cell susceptibility to costimulation/integrin blockade-based therapy

PubMed Central

Badell, IR; Kitchens, WH; Wagener, ME; Lukacher, AE; Larsen, CP; Ford, ML

2017-01-01

Recent studies have shown that the quantity of donor-reactive memory T cells is an important factor in determining the relative heterologous immunity barrier posed during transplantation. Here, we hypothesized that the quality of T cell memory also potently influences the response to costimulation blockade-based immunosuppression. Using a murine skin graft model of CD8+ memory T cell-mediated costimulation blockade resistance, we elicited donor-reactive memory T cells using three distinct types of pathogen infections. Strikingly, we observed differential efficacy of a costimulation and integrin blockade regimen based on the type of pathogen used to elicit the donor-reactive memory T cell response. Intriguingly, the most immunosuppression-sensitive memory T cell populations were composed primarily of central memory cells that possessed greater recall potential, exhibited a less differentiated phenotype, and contained more multi-cytokine producers. These data therefore demonstrate that the memory T cell barrier is dependent on the specific type of pathogen infection via which the donor-reactive memory T cells are elicited, and suggest that the immune stimulation history of a given transplant patient may profoundly influence the relative barrier posed by heterologous immunity during transplantation. PMID:26228897

ELECTRONIC INTEGRATING CIRCUIT

DOEpatents

Englemann, R.H.

1963-08-20

An electronic integrating circuit using a transistor with a capacitor connected between the emitter and collector through which the capacitor discharges at a rate proportional to the input current at the base is described. Means are provided for biasing the base with an operating bias and for applying a voltage pulse to the capacitor for charging to an initial voltage. A current dividing diode is connected between the base and emitter of the transistor, and signal input terminal means are coupled to the juncture of the capacitor and emitter and to the base of the transistor. At the end of the integration period, the residual voltage on said capacitor is less by an amount proportional to the integral of the input signal. Either continuous or intermittent periods of integration are provided. (AEC)

Cost-effective, transfer-free, flexible resistive random access memory using laser-scribed reduced graphene oxide patterning technology.

PubMed

Tian, He; Chen, Hong-Yu; Ren, Tian-Ling; Li, Cheng; Xue, Qing-Tang; Mohammad, Mohammad Ali; Wu, Can; Yang, Yi; Wong, H-S Philip

2014-06-11

Laser scribing is an attractive reduced graphene oxide (rGO) growth and patterning technology because the process is low-cost, time-efficient, transfer-free, and flexible. Various laser-scribed rGO (LSG) components such as capacitors, gas sensors, and strain sensors have been demonstrated. However, obstacles remain toward practical application of the technology where all the components of a system are fabricated using laser scribing. Memory components, if developed, will substantially broaden the application space of low-cost, flexible electronic systems. For the first time, a low-cost approach to fabricate resistive random access memory (ReRAM) using laser-scribed rGO as the bottom electrode is experimentally demonstrated. The one-step laser scribing technology allows transfer-free rGO synthesis directly on flexible substrates or non-flat substrates. Using this time-efficient laser-scribing technology, the patterning of a memory-array area up to 100 cm(2) can be completed in 25 min. Without requiring the photoresist coating for lithography, the surface of patterned rGO remains as clean as its pristine state. Ag/HfOx/LSG ReRAM using laser-scribing technology is fabricated in this work. Comprehensive electrical characteristics are presented including forming-free behavior, stable switching, reasonable reliability performance and potential for 2-bit storage per memory cell. The results suggest that laser-scribing technology can potentially produce more cost-effective and time-effective rGO-based circuits and systems for practical applications.

Printing Electronic Components from Copper-Infused Ink and Thermoplastic Mediums

NASA Astrophysics Data System (ADS)

Flowers, Patrick F.

The demand for printable electronics has sharply increased in recent years and is projected to continue to rise. Unfortunately, electronic materials which are suitable for desired applications while being compatible with available printing techniques are still often lacking. This thesis addresses two such challenging areas. In the realm of two-dimensional ink-based printing of electronics, a major barrier to the realization of printable computers that can run programs is the lack of a solution-coatable non-volatile memory with performance metrics comparable to silicon-based devices. To address this deficiency, I developed a nonvolatile memory based on Cu-SiO2 core-shell nanowires that can be printed from solution and exhibits on-off ratios of 106, switching speeds of 50 ns, a low operating voltage of 2 V, and operates for at least 104 cycles without failure. Each of these metrics is similar to or better than Flash memory (the write speed is 20 times faster than Flash). Memory architectures based on the individual memory cells demonstrated here could enable the printing of the more complex, embedded computing devices that are expected to make up an internet of things. Recently, the exploration of three-dimensional printing techniques to fabricate electronic materials began. A suitable general-purpose conductive thermoplastic filament was not available, however. In this work I examine the current state of conductive thermoplastic filaments, including a newly-released highly conductive filament that my lab has produced which we call Electrifi. I focus on the use of dual-material fused filament fabrication (FFF) to 3D print electronic components (conductive traces, resistors, capacitors, inductors) and circuits (a fully-printed high-pass filter). The resistivity of traces printed from conductive thermoplastic filaments made with carbon-black, graphene, and copper as conductive fillers was found to be 12, 0.78, and 0.014 ohm cm, respectively, enabling the creation of resistors with resistances spanning 3 orders of magnitude. The carbon black and graphene filaments were brittle and fractured easily, but the copper-based filament could be bent at least 500 times with little change in its resistance. Impedance measurements made on the thermoplastic filaments demonstrate that the copper-based filament had an impedance similar to a conductive PCB trace at 1 MHz. Dual material 3D printing was used to fabricate a variety of inductors and capacitors with properties that could be predictably tuned by modifying either the geometry of the components, or the materials used to fabricate the components. These resistors, capacitors, and inductors were combined to create a fully 3D printed high-pass filter with properties comparable to its conventional counterparts. The relatively low impedance of the copper-based filament enable its use to 3D print a receiver coil for wireless power transfer. We also demonstrate the ability to embed and connect surface mounted components in 3D printed objects with a low-cost ($1,000 in parts), open source dual-material 3D printer. This work thus demonstrates the potential for FFF 3D printing to create complex, three-dimensional circuits composed of either embedded or fully-printed electronic components.

First prototypes of hybrid potassium-ion capacitor (KIC): An innovative, cost-effective energy storage technology for transportation applications

NASA Astrophysics Data System (ADS)

Le Comte, Annaïg; Reynier, Yvan; Vincens, Christophe; Leys, Côme; Azaïs, Philippe

2017-09-01

Hybrid supercapacitors, combining capacitive carbon-based positive electrode with a Li-ion battery-type negative electrode have been developed in the pursuit of increasing the energy density of conventional supercapacitor without impacting the power density. However, lithium-ion capacitors yet hardly meet the specifications of automotive sector. Herein we report for the first time the development of new hybrid potassium-ion capacitor (KIC) technology. Compared to lithium-ion capacitor (LIC) all strategic materials (lithium and copper) have been replaced. Excellent electrochemical performance have been achieved at a pouch cell scale, with cyclability superior to 55 000 cycles at high charge/discharge regime. For the same cell scale, the energy density is doubled compared to conventional supercapacitor up to high power regime (>1.5 kW kg-1). Finally, the technology was successfully scaled up to 18650 format leading to very promising prospects for transportation applications.

Current Density Scaling in Electrochemical Flow Capacitors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoyt, NC; Wainright, JS; Savinell, RF

Electrochemical flow capacitors (EFCs) are a recently developed energy storage technology. One of the principal performance metrics of an EFC is the steady-state electrical current density that it can accept or deliver. Numerical models exist to predict this performance for specific cases, but here we present a study of how the current varies with respect to the applied cell voltage, flow rate, cell dimensions, and slurry properties using scaling laws. The scaling relationships are confirmed by numerical simulations and then subsequently by comparison to results from symmetric cell EFC experiments. This modeling approach permits the delimitation of three distinct operationalmore » regimes dependent on the values of two nondimensional combinations of the pertinent variables (specifically, a capacitive Graetz number and a conductivity ratio). Lastly, the models and nondimensional numbers are used to provide design guidance in terms of criteria for proper EFC operation. (C) The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. All rights reserved.« less

77 FR 42181 - Polychlorinated Biphenyls (PCBs); Disposition of Request Submitted Under TSCA Section 21

Federal Register 2010, 2011, 2012, 2013, 2014

2012-07-18

... dielectric fluid and all capacitors containing 3 pounds or more of dielectric fluid; b. Use all reasonable efforts to remove any capacitors and transformers containing less than 3 pounds of dielectric fluid from...

Cell membrane causes the lipid bilayers to behave as variable capacitors: A resonance with self-induction of helical proteins.

PubMed

Monajjemi, Majid

2015-12-01

Cell membrane has a unique feature of storing biological energies in a physiologically relevant environment. This study illustrates a capacitor model of biological cell membrane including DPPC structures. The electron density profile models, electron localization function (ELF) and local information entropy have been applied to study the interaction of proteins with lipid bilayers in the cell membrane. The quantum and coulomb blockade effects of different thicknesses in the membrane have also been specifically investigated. It has been exhibited the quantum effects can appear in a small region of the free space within the membrane thickness due to the number and type of phospholipid layers. In addition, from the viewpoint of quantum effects by Heisenberg rule, it is shown the quantum tunneling is allowed in some micro positions while it is forbidden in other forms of membrane capacitor systems. Due to the dynamical behavior of the cell membrane, its capacitance is not fixed which results a variable capacitor. In presence of the external fields through protein trance membrane or ions, charges exert forces that can influence the state of the cell membrane. This causes to appear the charge capacitive susceptibility that can resonate with self-induction of helical coils; the resonance of which is the main reason for various biological pulses. Copyright © 2015 Elsevier B.V. All rights reserved.

BioRadioTransmitter: a self-powered wireless glucose-sensing system.

PubMed

Hanashi, Takuya; Yamazaki, Tomohiko; Tsugawa, Wakako; Ikebukuro, Kazunori; Sode, Koji

2011-09-01

Although an enzyme fuel cell can be utilized as a glucose sensor, the output power generated is too low to power a device such as a currently available transmitter and operating system, and an external power source is required for operating an enzyme-fuel-cell-based biosensing system. We proposed a novel biosensor that we named BioCapacitor, in which a capacitor serves as a transducer. In this study, we constructed a new BioCapacitor-based system with an added radio-transmitter circuit and a miniaturized enzyme fuel cell. A miniaturized direct-electron-transfer-type compartmentless enzyme fuel cell was constructed with flavin adenine dinucleotide-dependent glucose dehydrogenase complex-based anode and a bilirubin-oxidase-based cathode. For construction of a BioRadioTransmitter wireless sensing system, a capacitor, an ultra-low-voltage charge-pump-integrated circuit, and Hartley oscillator circuit were connected to the miniaturized enzyme fuel cell. A radio-receiver circuit, comprising two field-effect transistors and a coil as an antenna, was used to amplify the signal generated from the biofuel cells. Radio wave signals generated by the BioRadioTransmitter were received, amplified, and converted from alternate to direct current by the radio receiver. When the capacitor discharges in the presence of glucose, the BioRadioTransmitter generates a radio wave, which is monitored by a radio receiver connected wirelessly to the sensing device. Magnitude of the radio wave transmission frequency change observed at the radio receiver was correlated to glucose concentration in the fuel cells. We constructed a stand-alone, self-powered, wireless glucose-sensing system called a BioRadioTransmitter by using a radio transmitter in which the radio wave transmission frequency changes with the glucose concentration in the fuel cell. The BioRadioTransmitter is a significant advance toward construction of an implantable continuous glucose monitor. © 2011 Diabetes Technology Society.

A new time calibration method for switched-capacitor-array-based waveform samplers

NASA Astrophysics Data System (ADS)

Kim, H.; Chen, C.-T.; Eclov, N.; Ronzhin, A.; Murat, P.; Ramberg, E.; Los, S.; Moses, W.; Choong, W.-S.; Kao, C.-M.

2014-12-01

We have developed a new time calibration method for the DRS4 waveform sampler that enables us to precisely measure the non-uniform sampling interval inherent in the switched-capacitor cells of the DRS4. The method uses the proportionality between the differential amplitude and sampling interval of adjacent switched-capacitor cells responding to a sawtooth-shape pulse. In the experiment, a sawtooth-shape pulse with a 40 ns period generated by a Tektronix AWG7102 is fed to a DRS4 evaluation board for calibrating the sampling intervals of all 1024 cells individually. The electronic time resolution of the DRS4 evaluation board with the new time calibration is measured to be 2.4 ps RMS by using two simultaneous Gaussian pulses with 2.35 ns full-width at half-maximum and applying a Gaussian fit. The time resolution dependencies on the time difference with the new time calibration are measured and compared to results obtained by another method. The new method could be applicable for other switched-capacitor-array technology-based waveform samplers for precise time calibration.

A New Time Calibration Method for Switched-capacitor-array-based Waveform Samplers.

PubMed

Kim, H; Chen, C-T; Eclov, N; Ronzhin, A; Murat, P; Ramberg, E; Los, S; Moses, W; Choong, W-S; Kao, C-M

2014-12-11

We have developed a new time calibration method for the DRS4 waveform sampler that enables us to precisely measure the non-uniform sampling interval inherent in the switched-capacitor cells of the DRS4. The method uses the proportionality between the differential amplitude and sampling interval of adjacent switched-capacitor cells responding to a sawtooth-shape pulse. In the experiment, a sawtooth-shape pulse with a 40 ns period generated by a Tektronix AWG7102 is fed to a DRS4 evaluation board for calibrating the sampling intervals of all 1024 cells individually. The electronic time resolution of the DRS4 evaluation board with the new time calibration is measured to be ~2.4 ps RMS by using two simultaneous Gaussian pulses with 2.35 ns full-width at half-maximum and applying a Gaussian fit. The time resolution dependencies on the time difference with the new time calibration are measured and compared to results obtained by another method. The new method could be applicable for other switched-capacitor-array technology-based waveform samplers for precise time calibration.

A New Time Calibration Method for Switched-capacitor-array-based Waveform Samplers

PubMed Central

Kim, H.; Chen, C.-T.; Eclov, N.; Ronzhin, A.; Murat, P.; Ramberg, E.; Los, S.; Moses, W.; Choong, W.-S.; Kao, C.-M.

2014-01-01

We have developed a new time calibration method for the DRS4 waveform sampler that enables us to precisely measure the non-uniform sampling interval inherent in the switched-capacitor cells of the DRS4. The method uses the proportionality between the differential amplitude and sampling interval of adjacent switched-capacitor cells responding to a sawtooth-shape pulse. In the experiment, a sawtooth-shape pulse with a 40 ns period generated by a Tektronix AWG7102 is fed to a DRS4 evaluation board for calibrating the sampling intervals of all 1024 cells individually. The electronic time resolution of the DRS4 evaluation board with the new time calibration is measured to be ~2.4 ps RMS by using two simultaneous Gaussian pulses with 2.35 ns full-width at half-maximum and applying a Gaussian fit. The time resolution dependencies on the time difference with the new time calibration are measured and compared to results obtained by another method. The new method could be applicable for other switched-capacitor-array technology-based waveform samplers for precise time calibration. PMID:25506113

Retention of intermediate polarization states in ferroelectric materials enabling memories for multi-bit data storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Dong; Asadi, Kamal; Blom, Paul W. M.

A homogeneous ferroelectric single crystal exhibits only two remanent polarization states that are stable over time, whereas intermediate, or unsaturated, polarization states are thermodynamically instable. Commonly used ferroelectric materials however, are inhomogeneous polycrystalline thin films or ceramics. To investigate the stability of intermediate polarization states, formed upon incomplete, or partial, switching, we have systematically studied their retention in capacitors comprising two classic ferroelectric materials, viz. random copolymer of vinylidene fluoride with trifluoroethylene, P(VDF-TrFE), and Pb(Zr,Ti)O{sub 3}. Each experiment started from a discharged and electrically depolarized ferroelectric capacitor. Voltage pulses were applied to set the given polarization states. The retention wasmore » measured as a function of time at various temperatures. The intermediate polarization states are stable over time, up to the Curie temperature. We argue that the remarkable stability originates from the coexistence of effectively independent domains, with different values of polarization and coercive field. A domain growth model is derived quantitatively describing deterministic switching between the intermediate polarization states. We show that by using well-defined voltage pulses, the polarization can be set to any arbitrary value, allowing arithmetic programming. The feasibility of arithmetic programming along with the inherent stability of intermediate polarization states makes ferroelectric materials ideal candidates for multibit data storage.« less

40 CFR Appendix D to Part 403 - Selected Industrial Subcategories Considered Dilute for Purposes of the Combined Wastestream Formula

Code of Federal Regulations, 2012 CFR

2012-07-01

... (40 CFR parts 413/433). Capacitors (Fluid Fill) Carbon and Graphite Products Dry Transformers Ferrite Electronic Devices Fixed Capacitors Fluorescent Lamps Fuel Cells Incandescent Lamps Magnetic Coatings Mica...

Interface Control of Ferroelectricity in an SrRuO 3/BaTiO 3/SrRuO 3 Capacitor and its Critical Thickness

DOE PAGES

Shin, Yeong Jae; Kim, Yoonkoo; Kang, Sung -Jin; ...

2017-03-03

Here, the atomic-scale synthesis of artificial oxide heterostructures offers new opportunities to create novel states that do not occur in nature. The main challenge related to synthesizing these structures is obtaining atomically sharp interfaces with designed termination sequences. In this study, it is demonstrated that the oxygen pressure (P O2) during growth plays an important role in controlling the interfacial terminations of SrRuO 3/BaTiO 3/SrRuO 3 (SRO/BTO/SRO) ferroelectric (FE) capacitors. The SRO/BTO/SRO heterostructures are grown by a pulsed laser deposition method. The top SRO/BTO interface, grown at high P O2 (around 150 mTorr), usually exhibits a mixture of RuO 2-BaOmore » and SrO-TiO 2 terminations. By reducing P O2, the authors obtain atomically sharp SRO/BTO top interfaces with uniform SrO-TiO 2 termination. Using capacitor devices with symmetric and uniform interfacial termination, it is demonstrated for the first time that the FE critical thickness can reach the theoretical limit of 3.5 unit cells.« less

Graphene Double-Layer Capacitor with ac Line-Filtering Performance

NASA Astrophysics Data System (ADS)

Miller, John R.; Outlaw, R. A.; Holloway, B. C.

2010-09-01

Electric double-layer capacitors (DLCs) can have high storage capacity, but their porous electrodes cause them to perform like resistors in filter circuits that remove ripple from rectified direct current. We have demonstrated efficient filtering of 120-hertz current with DLCs with electrodes made from vertically oriented graphene nanosheets grown directly on metal current collectors. This design minimized electronic and ionic resistances and produced capacitors with RC time constants of less than 200 microseconds, in contrast with ~1 second for typical DLCs. Graphene nanosheets have a preponderance of exposed edge planes that greatly increases charge storage as compared with that of designs that rely on basal plane surfaces. Capacitors constructed with these electrodes could be smaller than the low-voltage aluminum electrolyte capacitors that are typically used in electronic devices.

Graphene double-layer capacitor with ac line-filtering performance.

PubMed

Miller, John R; Outlaw, R A; Holloway, B C

2010-09-24

Electric double-layer capacitors (DLCs) can have high storage capacity, but their porous electrodes cause them to perform like resistors in filter circuits that remove ripple from rectified direct current. We have demonstrated efficient filtering of 120-hertz current with DLCs with electrodes made from vertically oriented graphene nanosheets grown directly on metal current collectors. This design minimized electronic and ionic resistances and produced capacitors with RC time constants of less than 200 microseconds, in contrast with ~1 second for typical DLCs. Graphene nanosheets have a preponderance of exposed edge planes that greatly increases charge storage as compared with that of designs that rely on basal plane surfaces. Capacitors constructed with these electrodes could be smaller than the low-voltage aluminum electrolyte capacitors that are typically used in electronic devices.

Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene) ultrathin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, ChangLi; Complex and Intelligent System Research Center, East China University of Science and Technology, Shanghai 200237; Wang, XueJun

2016-05-15

The switching characteristic of the poly(vinylidene fluoride-trifluoroethlene) (P(VDF-TrFE)) films have been studied at different ranges of applied electric field. It is suggest that the increase of the switching speed upon nucleation protocol and the deceleration of switching could be related to the presence of a non-ferroelectric layer. Remarkably, a capacitor and resistor (RC) links model plays significant roles in the polarization switching dynamics of the thin films. For P(VDF-TrFE) ultrathin films with electroactive interlayer, it is found that the switching dynamic characteristics are strongly affected by the contributions of resistor and non-ferroelectric (non-FE) interface factors. A corresponding experiment is designedmore » using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonic) (PEDOT-PSSH) as interlayer with different proton concentrations, and the testing results show that the robust switching is determined by the proton concentration in interlayer and lower leakage current in circuit to reliable applications of such polymer films. These findings provide a new feasible method to enhance the polarization switching for the ferroelectric random access memory.« less

Effect of an Additional, Parallel Capacitor on Pulsed Inductive Plasma Accelerator Performance

NASA Technical Reports Server (NTRS)

Polzin, Kurt A.; Sivak, Amy D.; Balla, Joseph V.

2011-01-01

A model of pulsed inductive plasma thrusters consisting of a set of coupled circuit equations and a one-dimensional momentum equation has been used to study the effects of adding a second, parallel capacitor into the system. The equations were nondimensionalized, permitting the recovery of several already-known scaling parameters and leading to the identification of a parameter that is unique to the particular topology studied. The current rise rate through the inductive acceleration coil was used as a proxy measurement of the effectiveness of inductive propellant ionization since higher rise rates produce stronger, potentially better ionizing electric fields at the coil face. Contour plots representing thruster performance (exhaust velocity and efficiency) and current rise rate in the coil were generated numerically as a function of the scaling parameters. The analysis reveals that when the value of the second capacitor is much less than the first capacitor, the performance of the two-capacitor system approaches that of the single-capacitor system. In addition, as the second capacitor is decreased in value the current rise rate can grow to be twice as great as the rise rate attained in the single capacitor case.

Fabrication of wound capacitors using flexible alkali-free glass

DOE PAGES

Wilke, Rudeger H. T.; Baker, Amanda; Brown-Shaklee, Harlan; ...

2016-10-01

Here, alkali-free glasses, which exhibit high energy storage densities (~35 J/cc), present a unique opportunity to couple high temperature stability with high breakdown strength, and thus provide an avenue for capacitor applications with stringent temperature and power requirements. Realizing the potential of these materials in kilovolt class capacitors with >1 J/cc recoverable energy density requires novel packaging strategies that incorporate these extremely fragile dielectrics. In this paper, we demonstrate the feasibility of fabricating wound capacitors using 50-μm-thick glass. Two capacitors were fabricated from 2.8-m-long ribbons of thin (50 μm) glass wound into 125-140-mm-diameter spools. The capacitors exhibit a capacitance ofmore » 70-75 nF with loss tangents below 1%. The wound capacitors can operate up to 1 kV and show excellent temperature stability to 150 °C. By improving the end terminations, the self-resonance can be shifted to above 1 MHz, indicating that these materials may be useful for pulsed power applications with microsecond discharge times.« less

Palm top plasma focus device as a portable pulsed neutron source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rout, R. K.; Niranjan, Ram; Srivastava, R.

2013-06-15

Development of a palm top plasma focus device generating (5.2 {+-} 0.8) Multiplication-Sign 10{sup 4} neutrons/pulse into 4{pi} steradians with a pulse width of 15 {+-} 3 ns is reported for the first time. The weight of the system is less than 1.5 kg. The system comprises a compact capacitor bank, a triggered open air spark gap switch, and a sealed type miniature plasma focus tube. The setup is around 14 cm in diameter and 12.5 cm in length. The energy driver for the unit is a capacitor bank of four cylindrical commercially available electrolytic capacitors. Each capacitor is ofmore » 2 {mu}F capacity, 4.5 cm in diameter, and 9.8 cm in length. The cost of each capacitor is less than US$ 10. The internal diameter and the effective length of the plasma focus unit are 2.9 cm and 5 cm, respectively. A DC to DC converter power supply powered by two rechargeable batteries charges the capacitor bank to the desired voltage and also provides a trigger pulse of -15 kV to the spark gap. The maximum energy of operation of the device is 100 J (8 {mu}F, 5 kV, 59 kA) with deuterium gas filling pressure of 3 mbar. The neutrons have also been produced at energy as low as 36 J (3 kV) of operation. The neutron diagnostics are carried out with a bank of {sup 3}He detectors and with a plastic scintillator detector. The device is portable, reusable, and can be operated for multiple shots with a single gas filling.« less

Alternate charging and discharging of capacitor to enhance the electron production of bioelectrochemical systems.

PubMed

Liang, Peng; Wu, Wenlong; Wei, Jincheng; Yuan, Lulu; Xia, Xue; Huang, Xia

2011-08-01

A bioelectrochemical system (BES) can be operated in both "microbial fuel cell" (MFC) and "microbial electrolysis cell" (MEC) modes, in which power is delivered and invested respectively. To enhance the electric current production, a BES was operated in MFC mode first and a capacitor was used to collect power from the system. Then the charged capacitor discharged electrons to the system itself, switching into MEC mode. This alternate charging and discharging (ACD) mode helped the system produce 22-32% higher average current compared to an intermittent charging (IC) mode, in which the capacitor was first charged from an MFC and then discharged to a resistor, at 21.6 Ω external resistance, 3.3 F capacitance and 300 mV charging voltage. The effects of external resistance, capacitance and charging voltage on average current were studied. The average current reduced as the external resistance and charging voltage increased and was slightly affected by the capacitance. Acquisition of higher average current in the ACD mode was attributed to the shorter discharging time compared to the charging time, as well as a higher anode potential caused by discharging the capacitor. Results from circuit analysis and quantitatively calculation were consistent with the experimental observations.

Synthesis of high-performance Li4Ti5O12 and its application to the asymmetric hybrid capacitor

NASA Astrophysics Data System (ADS)

Lee, Byunggwan; Yoon, Jung Rag

2013-11-01

In this work, granule Li4Ti5O12 was successfully synthesized by spray drying a precursor slurry, followed by the solid-state reaction method. The precursor slurry was prepared from a solution of lithium carbonate (Li2CO3) and titanium dioxide (TiO2) in deionized water. A hybrid capacitor was fabricated which comprised a granule Li4Ti5O12 anode and activated carbon cathode. For comparison, an electrical double-layer capacitor (EDLC) cell was fabricated by using activated carbon electrodes in the same way. The electrochemical performance of the hybrid capacitor and the EDLC was characterized by constant current charge/discharge curves and cycle performance testing. The electrochemical testing results showed that the capacitance of the hybrid capacitor is approximately 2.5 times higher than that of the EDLC. Furthermore, the capacitance of the EDLC and the hybrid capacitor barely decreased after 1,000 cycles. The results of this study demonstrate that the hybrid capacitor has the advantages of the high rate capability of a supercapacitor (EDLC) and high battery capacity.

Quantum random access memory.

PubMed

Giovannetti, Vittorio; Lloyd, Seth; Maccone, Lorenzo

2008-04-25

A random access memory (RAM) uses n bits to randomly address N=2(n) distinct memory cells. A quantum random access memory (QRAM) uses n qubits to address any quantum superposition of N memory cells. We present an architecture that exponentially reduces the requirements for a memory call: O(logN) switches need be thrown instead of the N used in conventional (classical or quantum) RAM designs. This yields a more robust QRAM algorithm, as it in general requires entanglement among exponentially less gates, and leads to an exponential decrease in the power needed for addressing. A quantum optical implementation is presented.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wilke, Rudeger H. T.; Baker, Amanda; Brown-Shaklee, Harlan

Here, alkali-free glasses, which exhibit high energy storage densities (~35 J/cc), present a unique opportunity to couple high temperature stability with high breakdown strength, and thus provide an avenue for capacitor applications with stringent temperature and power requirements. Realizing the potential of these materials in kilovolt class capacitors with >1 J/cc recoverable energy density requires novel packaging strategies that incorporate these extremely fragile dielectrics. In this paper, we demonstrate the feasibility of fabricating wound capacitors using 50-μm-thick glass. Two capacitors were fabricated from 2.8-m-long ribbons of thin (50 μm) glass wound into 125-140-mm-diameter spools. The capacitors exhibit a capacitance ofmore » 70-75 nF with loss tangents below 1%. The wound capacitors can operate up to 1 kV and show excellent temperature stability to 150 °C. By improving the end terminations, the self-resonance can be shifted to above 1 MHz, indicating that these materials may be useful for pulsed power applications with microsecond discharge times.« less

Elastic resistance change and action potential generation of non-faradaic Pt/TiO2/Pt capacitors.

PubMed

Lim, Hyungkwang; Jang, Ho Won; Lee, Doh-Kwon; Kim, Inho; Hwang, Cheol Seong; Jeong, Doo Seok

2013-07-21

Electric current in the mixed ionic-electronic conductor TiO2 is hysteretic, i.e. history-dependent, and its use is versatile in electronic devices. Nowadays, biologically inspired, analogue-type computing systems, known as neuromorphic systems, are being actively investigated owing to their new and intriguing physical concepts. The realization of artificial synapses is important for constructing neuromorphic systems. In mammalians' brains, the plasticity of synapses between neighbouring nerve cells arises from action potential firing. Emulating action potential firing via inorganic systems has therefore become important in neuromorphic engineering. In this work, the current-voltage hysteresis of TiO2-based non-faradaic capacitors is investigated to primarily focus on the correlation between the blocking contact and the elasticity, i.e. non-plasticity, of the capacitors' resistance change, in experimental and theoretical methods. The similarity between the action potential firing behaviour in nerve cells and the elasticity of the non-faradaic capacitors is addressed.

Two integrator loop quadrature oscillators: A review.

PubMed

Soliman, Ahmed M

2013-01-01

A review of the two integrator loop oscillator circuits providing two quadrature sinusoidal output voltages is given. All the circuits considered employ the minimum number of capacitors namely two except one circuit which uses three capacitors. The circuits considered are classified to four different classes. The first class includes floating capacitors and floating resistors and the active building blocks realizing these circuits are the Op Amp or the OTRA. The second class employs grounded capacitors and includes floating resistors and the active building blocks realizing these circuits are the DCVC or the unity gain cells or the CFOA. The third class employs grounded capacitors and grounded resistors and the active building blocks realizing these circuits are the CCII. The fourth class employs grounded capacitors and no resistors and the active building blocks realizing these circuits are the TA. Transformation methods showing the generation of different classes from each other is given in details and this is one of the main objectives of this paper.

NEPP Evaluation of Automotive Grade Tantalum Chip Capacitors

NASA Technical Reports Server (NTRS)

Sampson, Mike; Brusse, Jay

2018-01-01

Automotive grade tantalum (Ta) chip capacitors are available at lower cost with smaller physical size and higher volumetric efficiency compared to military/space grade capacitors. Designers of high reliability aerospace and military systems would like to take advantage of these attributes while maintaining the high standards for long-term reliable operation they are accustomed to when selecting military-qualified established reliability tantalum chip capacitors (e.g., MIL-PRF-55365). The objective for this evaluation was to assess the long-term performance of off-the-shelf automotive grade Ta chip capacitors (i.e., manufacturer self-qualified per AEC Q-200). Two (2) lots of case size D manganese dioxide (MnO2) cathode Ta chip capacitors from 1 manufacturer were evaluated. The evaluation consisted of construction analysis, basic electrical parameter characterization, extended long-term (2000 hours) life testing and some accelerated stress testing. Tests and acceptance criteria were based upon manufacturer datasheets and the Automotive Electronics Council's AEC Q-200 qualification specification for passive electronic components. As-received a few capacitors were marginally above the specified tolerance for capacitance and ESR. X-ray inspection found that the anodes for some devices may not be properly aligned within the molded encapsulation leaving less than 1 mil thickness of the encapsulation. This evaluation found that the long-term life performance of automotive grade Ta chip capacitors is generally within specification limits suggesting these capacitors may be suitable for some space applications.

Physicochemical assessment criteria for high-voltage pulse capacitors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Darian, L. A., E-mail: LDarian@rambler.ru; Lam, L. Kh.

In the paper, the applicability of decomposition products of internal insulation of high-voltage pulse capacitors is considered (aging is the reason for decomposition products of internal insulation). Decomposition products of internal insulation of high-voltage pulse capacitors can be used to evaluate their quality when in operation and in service. There have been three generations of markers of aging of insulation as in the case with power transformers. The area of applicability of markers of aging of insulation for power transformers has been studied and the area can be extended to high-voltage pulse capacitors. The research reveals that there is amore » correlation between the components and quantities of markers of aging of the first generation (gaseous decomposition products of insulation) dissolved in insulating liquid and the remaining life of high-voltage pulse capacitors. The application of markers of aging to evaluate the remaining service life of high-voltage pulse capacitor is a promising direction of research, because the design of high-voltage pulse capacitors keeps stability of markers of aging of insulation in high-voltage pulse capacitors. It is necessary to continue gathering statistical data concerning development of markers of aging of the first generation. One should also carry out research aimed at estimation of the remaining life of capacitors using markers of the second and the third generation.« less

A non-destructive crossbar architecture of multi-level memory-based resistor

NASA Astrophysics Data System (ADS)

Sahebkarkhorasani, Seyedmorteza

Nowadays, researchers are trying to shrink the memory cell in order to increase the capacity of the memory system and reduce the hardware costs. In recent years, there has been a revolution in electronics by using fundamentals of physics to build a new memory for computer application in order to increase the capacity and decrease the power consumption. Increasing the capacity of the memory causes a growth in the chip area. From 1971 to 2012 semiconductor manufacturing process improved from 6mum to 22 mum. In May 2008, S.Williams stated that "it is time to stop shrinking". In his paper, he declared that the process of shrinking memory element has recently become very slow and it is time to use another alternative in order to create memory elements [9]. In this project, we present a new design of a memory array using the new element named Memristor [3]. Memristor is a two-terminal passive electrical element that relates the charge and magnetic flux to each other. The device remained unknown since 1971 when it was discovered by Chua and introduced as the fourth fundamental passive element like capacitor, inductor and resistor [3]. Memristor has a dynamic resistance and it can retain its previous value even after disconnecting the power supply. Due to this interesting behavior of the Memristor, it can be a good replacement for all of the Non-Volatile Memories (NVMs) in the near future. Combination of this newly introduced element with the nanowire crossbar architecture would be a great structure which is called Crossbar Memristor. Some frameworks have recently been introduced in literature that utilized Memristor crossbar array, but there are many challenges to implement the Memristor crossbar array due to fabrication and device limitations. In this work, we proposed a simple design of Memristor crossbar array architecture which uses input feedback in order to preserve its data after each read operation.

Analysis of beam loss induced abort kicker instability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang W.; Sandberg, J.; Ahrens, L.

2012-05-20

Through more than a decade of operation, we have noticed the phenomena of beam loss induced kicker instability in the RHIC beam abort systems. In this study, we analyze the short term beam loss before abort kicker pre-fire events and operation conditions before capacitor failures. Beam loss has caused capacitor failures and elevated radiation level concentrated at failed end of capacitor has been observed. We are interested in beam loss induced radiation and heat dissipation in large oil filled capacitors and beam triggered thyratron conduction. We hope the analysis result would lead to better protection of the abort systems andmore » improved stability of the RHIC operation.« less

Electrochemical fabrication of capacitors

DOEpatents

Mansour, Azzam N.; Melendres, Carlos A.

1999-01-01

A film of nickel oxide is anodically deposited on a graphite sheet held in osition on an electrochemical cell during application of a positive electrode voltage to the graphite sheet while exposed to an electrolytic nickel oxide solution within a volumetrically variable chamber of the cell. An angularly orientated x-ray beam is admitted into the cell for transmission through the deposited nickel oxide film in order to obtain structural information while the film is subject to electrochemical and in-situ x-ray spectroscopy from which optimum film thickness, may be determined by comparative analysis for capacitor fabrication purposes.

Digital multimeter-based immunosensing strategy for sensitive monitoring of biomarker by coupling an external capacitor with an enzymatic catalysis.

PubMed

Tang, Dianping; Zhang, Bing; Liu, Bingqian; Chen, Guonan; Lu, Minghua

2014-05-15

A new digital multimeter (DMM)-based immunosensing system was designed for quantitative monitoring of biomarker (prostate-specific antigen, PSA used in this case) by coupling with an external capacitor and an enzymatic catalytic reaction. The system consisted of a salt bridge-linked reaction cell and a capacitor/DMM-joined electronic circuit. A sandwich-type immunoreaction with target PSA between the immobilized primary antibody and glucose oxidase (GOx)-labeled detection antibody was initially carried out in one of the two half-cells. Accompanying the sandwiched immunocomplex, the conjugated GOx could catalyze the oxidation of glucose, simultaneously resulting in the conversion of [Fe(CN)6](3-) to [Fe(CN)6](4-). The difference in the concentrations of [Fe(CN)6](3-)/[Fe(CN)6](4-) in two half-cells automatically produced a voltage that was utilized to charge an external capacitor. With the closing circuit switch, the capacitor discharged through the DMM, which could provide a high instantaneous current. Under the optimal conditions, the resulting currents was indirectly proportional to the concentration of target PSA in the dynamic range of 0.05-7 ng mL(-1) with a detection limit (LOD) of 6 pg mL(-1). The reproducibility, precision, and selectivity were acceptable. In addition, the methodology was validated by analyzing 12 clinical serum specimens, receiving a good accordance with the referenced values for the detection of PSA. Copyright © 2013 Elsevier B.V. All rights reserved.

High performance sodium-ion hybrid capacitor based on Na2Ti2O4(OH)2 nanostructures

NASA Astrophysics Data System (ADS)

Babu, Binson; Shaijumon, M. M.

2017-06-01

Hybrid Na-ion capacitors bridge the performance gap between Na-ion batteries and supercapacitors and offer excellent energy and power characteristics. However, designing efficient anode and cathode materials with improved kinetics and long cycle life is essential for practical implementation of this technology. Herein, layered sodium titanium oxide hydroxide, Na2Ti2O4(OH)2, synthesized through hydrothermal technique, is studied as efficient anode material for hybrid Na-ion capacitor. Half-cell electrochemical studies vs. Na/Na+ showed excellent performance for Na2Ti2O4(OH)2 electrode, with ∼57.2% of the total capacity (323.3 C g-1 at 1.0 mV s-1) dominated by capacitive behavior and the remaining due to Na-intercalation. The obtained values are in good agreement with Trasatti plots indicating the potential of this material as efficient anode for hybrid Na-ion capacitor. Further, a full cell Na-ion capacitor is fabricated with Na2Ti2O4(OH)2 as anode and chemically activated Rice Husk Derived Porous Carbon (RHDPC-KOH) as cathode by using organic electrolyte. The hybrid device, operated at a maximum cell voltage of 4 V, exhibits stable electrochemical performance with a maximum energy density of ∼65 Wh kg-1 (at 500 W kg-1, 0.20 A g-1) and with more than ∼ 93% capacitive retention after 3000 cycles.

Hoxb4 overexpression in CD4 memory phenotype T cells increases the central memory population upon homeostatic proliferation.

PubMed

Frison, Héloïse; Giono, Gloria; Thébault, Paméla; Fournier, Marilaine; Labrecque, Nathalie; Bijl, Janet J

2013-01-01

Memory T cell populations allow a rapid immune response to pathogens that have been previously encountered and thus form the basis of success in vaccinations. However, the molecular pathways underlying the development and maintenance of these cells are only starting to be unveiled. Memory T cells have the capacity to self renew as do hematopoietic stem cells, and overlapping gene expression profiles suggested that these cells might use the same self-renewal pathways. The transcription factor Hoxb4 has been shown to promote self-renewal divisions of hematopoietic stem cells resulting in an expansion of these cells. In this study we investigated whether overexpression of Hoxb4 could provide an advantage to CD4 memory phenotype T cells in engrafting the niche of T cell deficient mice following adoptive transfer. Competitive transplantation experiments demonstrated that CD4 memory phenotype T cells derived from mice transgenic for Hoxb4 contributed overall less to the repopulation of the lymphoid organs than wild type CD4 memory phenotype T cells after two months. These proportions were relatively maintained following serial transplantation in secondary and tertiary mice. Interestingly, a significantly higher percentage of the Hoxb4 CD4 memory phenotype T cell population expressed the CD62L and Ly6C surface markers, characteristic for central memory T cells, after homeostatic proliferation. Thus Hoxb4 favours the maintenance and increase of the CD4 central memory phenotype T cell population. These cells are more stem cell like and might eventually lead to an advantage of Hoxb4 T cells after subjecting the cells to additional rounds of proliferation.

Reliability Evaluation of Base-Metal-Electrode Multilayer Ceramic Capacitors for Potential Space Applications

NASA Technical Reports Server (NTRS)

Liu, David (Donhang); Sampson, Michael J.

2011-01-01

Base-metal-electrode (BME) ceramic capacitors are being investigated for possible use in high-reliability spacelevel applications. This paper focuses on how BME capacitors construction and microstructure affects their lifetime and reliability. Examination of the construction and microstructure of commercial off-the-shelf (COTS) BME capacitors reveals great variance in dielectric layer thickness, even among BME capacitors with the same rated voltage. Compared to PME (precious-metal-electrode) capacitors, BME capacitors exhibit a denser and more uniform microstructure, with an average grain size between 0.3 and 0.5 m, which is much less than that of most PME capacitors. BME capacitors can be fabricated with more internal electrode layers and thinner dielectric layers than PME capacitors because they have a fine-grained microstructure and do not shrink much during ceramic sintering. This makes it possible for BME capacitors to achieve a very high capacitance volumetric efficiency. The reliability of BME and PME capacitors was investigated using highly accelerated life testing (HALT). Most BME capacitors were found to fail with an early avalanche breakdown, followed by a regular dielectric wearout failure during the HALT test. When most of the early failures, characterized with avalanche breakdown, were removed, BME capacitors exhibited a minimum mean time-to-failure (MTTF) of more than 105 years at room temperature and rated voltage. Dielectric thickness was found to be a critical parameter for the reliability of BME capacitors. The number of stacked grains in a dielectric layer appears to play a significant role in determining BME capacitor reliability. Although dielectric layer thickness varies for a given rated voltage in BME capacitors, the number of stacked grains is relatively consistent, typically around 12 for a number of BME capacitors with a rated voltage of 25V. This may suggest that the number of grains per dielectric layer is more critical than the thickness itself for determining the rated voltage and the life expectancy of the BME capacitor. The leakage current characterization and the failure analysis results suggest that most of these early avalanche failures are due to the extrinsic minor construction defects introduced during fabrication of BME capacitors. The concentration of the extrinsic defects must be reduced if the BME capacitors are considered for high reliability applications. There are two approaches that can reduce or prevent the occurrence of early failure in BME capacitors: (1) to reduce the defect concentration with improved processing control; (2) to prevent the use of BME capacitors under harsh external stress levels so that the extrinsic defects will never be triggered for a failure. In order to do so appropriate dielectric layer thickness must be determined for a given rated voltage.

Dynamic Wireless Charging of Electric Vehicle Demonstrated at Oak Ridge National Laboratory: Benefit of Electrochemical Capacitor Smoothing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miller, John M; Onar, Omer C; White, Cliff P

2014-01-01

Abstract Wireless charging of an electric vehicle while in motion presents challenges in terms of low latency communications for roadway coil excitation sequencing, and maintenance of lateral alignment, plus the need for power flow smoothing. This paper summarizes the experimental results on power smoothing of in-motion wireless EV charging performed at Oak Ridge National Laboratory using various combinations of electrochemical capacitors at the grid-side and in-vehicle. Electrochemical capacitors of the symmetric carbon-carbon type from Maxwell Technologies comprised the in-vehicle smoothing of wireless charging current to the EV battery pack. Electro Standards Laboratories fabricated the passive and active parallel lithium-capacitor unitmore » used to smooth grid-side power. Power pulsation reduction was 81% on grid by LiC, and 84% on vehicle for both lithium-capacitor and the carbon ultracapacitors.« less

An Inverter Packaging Scheme for an Integrated Segmented Traction Drive System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Su, Gui-Jia; Tang, Lixin; Ayers, Curtis William

The standard voltage source inverter (VSI), widely used in electric vehicle/hybrid electric vehicle (EV/HEV) traction drives, requires a bulky dc bus capacitor to absorb the large switching ripple currents and prevent them from shortening the battery s life. The dc bus capacitor presents a significant barrier to meeting inverter cost, volume, and weight requirements for mass production of affordable EVs/HEVs. The large ripple currents become even more problematic for the film capacitors (the capacitor technology of choice for EVs/HEVs) in high temperature environments as their ripple current handling capability decreases rapidly with rising temperatures. It is shown in previous workmore » that segmenting the VSI based traction drive system can significantly decrease the ripple currents and thus the size of the dc bus capacitor. This paper presents an integrated packaging scheme to reduce the system cost of a segmented traction drive.« less

Dielectric properties of inorganic fillers filled epoxy thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Norshamira, A., E-mail: myra.arshad@gmail.com; Mariatti, M., E-mail: mariatti@usm.my

2015-07-22

The demand on the small size and high performance electronics has driven changes in the electronic packaging requirements from discrete capacitor to embedded capacitor. Embedded capacitor can improve electrical performance compared with discrete capacitor. This study aimed to achieve high dielectric of epoxy thin film composite that were targeted for application as embedded capacitor. In this study, inorganic fillers such as Calcium Copper Titanate (CCTO), Iron(III) Oxide (Fe{sub 2}O{sub 3}) and Titanium Dioxide (TiO{sub 2}) were loaded in epoxy system at 5 and 20vol%. Morphology and dielectric properties were investigated to identify the effect of fillers loading and types ofmore » fillers on the properties of epoxy thin film composite. Based on the study, CCTO with 20vol% loading was found to have good dielectric properties compared to other type of fillers.« less

Self-discharge of electrochemical capacitors based on soluble or grafted quinone.

PubMed

Shul, Galyna; Bélanger, Daniel

2016-07-28

The self-discharge of hybrid electrochemical capacitors based on the redox activity of electrolyte additives or grafted species to the electrode material is investigated simultaneously for the cell and each individual electrode. Electrochemical capacitors using a redox-active electrolyte consisting in hydroquinone added to the electrolyte solution and a redox-active electrode based on anthraquinone-grafted carbon as a negative electrode are investigated. The results are analyzed by using Conway kinetic models and compared to those of a common electrochemical double layer capacitor. The self-discharge investigation is complemented by charge/discharge cycling and it is shown that processes affecting galvanostatic charge/discharge cycling and the self-discharge rate occurring at each electrode of an electrochemical capacitor are different but related to each other. The electrochemical capacitor containing hydroquinone in the electrolyte exhibits a much quicker self-discharge rate than that using a negative electrode based on grafted anthraquinone with a 50% decay of the cell voltage of the fully charged device in 0.6 and 6 h, respectively. The fast self-discharge of the former is due to the diffusion of benzoquinone molecules (formed at the positive electrode during charging) to the negative electrode, where they are reduced, causing a quick depolarization. The grafting of anthraquinone molecules on the carbon material of the negative electrode led to a much slower self-discharge, which nonetheless occurred, by the reaction of the reduced form of the grafted species with electrolyte species.

Edge smoothing for real-time simulation of a polygon face object system as viewed by a moving observer

NASA Technical Reports Server (NTRS)

Lotz, Robert W. (Inventor); Westerman, David J. (Inventor)

1980-01-01

The visual system within an aircraft flight simulation system receives flight data and terrain data which is formated into a buffer memory. The image data is forwarded to an image processor which translates the image data into face vertex vectors Vf, defining the position relationship between the vertices of each terrain object and the aircraft. The image processor then rotates, clips, and projects the image data into two-dimensional display vectors (Vd). A display generator receives the Vd faces, and other image data to provide analog inputs to CRT devices which provide the window displays for the simulated aircraft. The video signal to the CRT devices passes through an edge smoothing device which prolongs the rise time (and fall time) of the video data inversely as the slope of the edge being smoothed. An operational amplifier within the edge smoothing device has a plurality of independently selectable feedback capacitors each having a different value. The values of the capacitors form a series which doubles as a power of two. Each feedback capacitor has a fast switch responsive to the corresponding bit of a digital binary control word for selecting (1) or not selecting (0) that capacitor. The control word is determined by the slope of each edge. The resulting actual feedback capacitance for each edge is the sum of all the selected capacitors and is directly proportional to the value of the binary control word. The output rise time (or fall time) is a function of the feedback capacitance, and is controlled by the slope through the binary control word.

Charge trapping phenomena of tetraethylorthosilicate thin film containing Si nanocrystals synthesized by solid-state reaction.

PubMed

Lau, H W; Tan, O K; Liu, Y; Trigg, D A; Chen, T P

2006-08-28

In this work, we report on the fabrication of tetraethylorthosilicate (TEOS) thin dielectric film containing silicon nanocrystals (Si nc), synthesized by solid-state reaction, in a capacitor structure. A metal-insulator-semi-conductor (MIS) capacitor, with 28 nm thick Si nc in a TEOS thin film, has been fabricated. For this MIS, both electron and hole trapping in the Si nc are possible, depending on the polarity of the bias voltage. A V(FB) shift greater than 1 V can be experienced by a bias voltage of 16 V applied to the metal electrode for 1 s. Though there is no top control oxide, the discharge time for 10% of charges can be up to 4480 s when it is biased at 16 V for 1 s. It is further demonstrated that charging and discharging mechanisms are due to the Si nc rather than the TEOS oxide defects. This form of Si nc in a TEOS thin film capacitor provides the possibility of memory applications at low cost.

Memcomputing with membrane memcapacitive systems

NASA Astrophysics Data System (ADS)

Pershin, Y. V.; Traversa, F. L.; Di Ventra, M.

2015-06-01

We show theoretically that networks of membrane memcapacitive systems—capacitors with memory made out of membrane materials—can be used to perform a complete set of logic gates in a massively parallel way by simply changing the external input amplitudes, but not the topology of the network. This polymorphism is an important characteristic of memcomputing (computing with memories) that closely reproduces one of the main features of the brain. A practical realization of these membrane memcapacitive systems, using, e.g., graphene or other 2D materials, would be a step forward towards a solid-state realization of memcomputing with passive devices.

TLR4 ligands lipopolysaccharide and monophosphoryl lipid a differentially regulate effector and memory CD8+ T Cell differentiation.

PubMed

Cui, Weiguo; Joshi, Nikhil S; Liu, Ying; Meng, Hailong; Kleinstein, Steven H; Kaech, Susan M

2014-05-01

Vaccines formulated with nonreplicating pathogens require adjuvants to help bolster immunogenicity. The role of adjuvants in Ab production has been well studied, but how they influence memory CD8(+) T cell differentiation remains poorly defined. In this study we implemented dendritic cell-mediated immunization to study the effects of commonly used adjuvants, TLR ligands, on effector and memory CD8(+) T cell differentiation in mice. Intriguingly, we found that the TLR4 ligand LPS was far more superior to other TLR ligands in generating memory CD8(+) T cells upon immunization. LPS boosted clonal expansion similar to the other adjuvants, but fewer of the activated CD8(+) T cells died during contraction, generating a larger pool of memory cells. Surprisingly, monophosphoryl lipid A (MPLA), another TLR4 ligand, enhanced clonal expansion of effector CD8(+) T cells, but it also promoted their terminal differentiation and contraction; thus, fewer memory CD8(+) T cells formed, and MPLA-primed animals were less protected against secondary infection compared with those primed with LPS. Furthermore, gene expression profiling revealed that LPS-primed effector cells displayed a stronger pro-memory gene expression signature, whereas the gene expression profile of MPLA-primed effector cells aligned closer with terminal effector CD8(+) T cells. Lastly, we demonstrated that the LPS-TLR4-derived "pro-memory" signals were MyD88, but not Toll/IL-1R domain-containing adapter inducing IFN-β, dependent. This study reveals the influential power of adjuvants on the quantity and quality of CD8(+) T cell memory, and that attention to adjuvant selection is crucial because boosting effector cell expansion may not always equate with more memory T cells or greater protection.

Fabrication of ultrathin film capacitors by chemical solution deposition

DOE PAGES

Brennecka, Geoff L.; Tuttle, Bruce A.

2007-10-01

We present that a facile solution-based processing route using standard spin-coating deposition techniques has been developed for the production of reliable capacitors based on lead lanthanum zirconate titanate (PLZT) with active areas of ≥1 mm 2 and dielectric layer thicknesses down to 50 nm. With careful control of the dielectric phase development through improved processing, ultrathin capacitors exhibited slim ferroelectric hysteresis loops and dielectric constants of >1000, similar to those of much thicker films. Furthermore, it has been demonstrated that chemical solution deposition is a viable route to the production of capacitor films which are as thin as 50 nmmore » but are still macroscopically addressable with specific capacitance values >160 nF/mm 2.« less

Dynamic electrical reconfiguration for improved capacitor charging in microbial fuel cell stacks

NASA Astrophysics Data System (ADS)

Papaharalabos, George; Greenman, John; Stinchcombe, Andrew; Horsfield, Ian; Melhuish, Chris; Ieropoulos, Ioannis

2014-12-01

A microbial fuel cell (MFC) is a bioelectrochemical device that uses anaerobic bacteria to convert chemical energy locked in biomass into small amounts of electricity. One viable way of increasing energy extraction is by stacking multiple MFC units and exploiting the available electrical configurations for increasing the current or stepping up the voltage. The present study illustrates how a real-time electrical reconfiguration of MFCs in a stack, halves the time required to charge a capacitor (load) and achieves 35% higher current generation compared to a fixed electrical configuration. This is accomplished by progressively switching in-parallel elements to in-series units in the stack, thus maintaining an optimum potential difference between the stack and the capacitor, which in turn allows for a higher energy transfer.

A comparison of heavy ion induced single event upset susceptibility in unhardened 6T/SRAM and hardened ADE/SRAM

NASA Astrophysics Data System (ADS)

Wang, Bin; Zeng, Chuanbin; Geng, Chao; Liu, Tianqi; Khan, Maaz; Yan, Weiwei; Hou, Mingdong; Ye, Bing; Sun, Youmei; Yin, Yanan; Luo, Jie; Ji, Qinggang; Zhao, Fazhan; Liu, Jie

2017-09-01

Single event upset (SEU) susceptibility of unhardened 6T/SRAM and hardened active delay element (ADE)/SRAM, fabricated with 0.35 μm silicon-on-insulator (SOI) CMOS technology, was investigated at heavy ion accelerator. The mechanisms were revealed by the laser irradiation and resistor-capacitor hardened techniques. Compared with conventional 6T/SRAM, the hardened ADE/SRAM exhibited higher tolerance to heavy ion irradiation, with an increase of about 80% in the LET threshold and a decrease of ∼64% in the limiting upset cross-section. Moreover, different probabilities between 0 → 1 and 1 → 0 transitions were observed, which were attributed to the specific architecture of ADE/SRAM memory cell. Consequently, the radiation-hardened technology can be an attractive alternative to the SEU tolerance of the device-level.

A critical role for STAT3 transcription factor signaling in the development and maintenance of human T cell memory.

PubMed

Siegel, Andrea M; Heimall, Jennifer; Freeman, Alexandra F; Hsu, Amy P; Brittain, Erica; Brenchley, Jason M; Douek, Daniel C; Fahle, Gary H; Cohen, Jeffrey I; Holland, Steven M; Milner, Joshua D

2011-11-23

STAT3 transcription factor signaling in specific T helper cell differentiation has been well described, although the broader roles for STAT3 in lymphocyte memory are less clear. Patients with autosomal-dominant hyper-IgE syndrome (AD-HIES) carry dominant-negative STAT3 mutations and are susceptible to a variety of bacterial and fungal infections. We found that AD-HIES patients have a cell-intrinsic defect in the number of central memory CD4(+) and CD8(+) T cells compared to healthy controls. Naive T cells from AD-HIES patients had lower expression of memory-related transcription factors BCL6 and SOCS3, a primary proliferation defect, and they failed to acquire central memory-like surface phenotypes in vitro. AD-HIES patients showed a decreased ability to control varicella zoster virus (VZV) and Epstein-Barr virus (EBV) latency, and T cell memory to both of these viruses was compromised. These data point to a specific role for STAT3 in human central memory T cell formation and in control of certain chronic viruses. Copyright © 2011 Elsevier Inc. All rights reserved.

Multi-electrode double layer capacitor having single electrolyte seal and aluminum-impregnated carbon cloth electrodes

DOEpatents

Farahmandi, C. J.; Dispennette, J. M.; Blank, E.; Kolb, A. C.

1999-05-25

A single cell, multi-electrode high performance double layer capacitor includes first and second flat stacks of electrodes adapted to be housed in a closeable two-part capacitor case which includes only a single electrolyte seal. Each electrode stack has a plurality of electrodes connected in parallel, with the electrodes of one stack being interleaved with the electrodes of the other stack to form an interleaved stack, and with the electrodes of each stack being electrically connected to respective capacitor terminals. A porous separator sleeve is inserted over the electrodes of one stack before interleaving to prevent electrical shorts between the electrodes. The electrodes are made by folding a compressible, low resistance, aluminum-impregnated carbon cloth, made from activated carbon fibers, around a current collector foil, with a tab of the foils of each electrode of each stack being connected in parallel and connected to the respective capacitor terminal. The height of the interleaved stack is somewhat greater than the inside height of the closed capacitor case, thereby requiring compression of the interleaved electrode stack when placed inside of the case, and thereby maintaining the interleaved electrode stack under modest constant pressure. The closed capacitor case is filled with an electrolytic solution and sealed. A preferred electrolytic solution is made by dissolving an appropriate salt into acetonitrile (CH[sub 3]CN). In one embodiment, the two parts of the capacitor case are conductive and function as the capacitor terminals. 32 figs.

Method of making a multi-electrode double layer capacitor having single electrolyte seal and aluminum-impregnated carbon cloth electrodes

DOEpatents

Farahmandi, C. Joseph; Dispennette, John M.; Blank, Edward; Kolb, Alan C.

2002-09-17

A single cell, multi-electrode high performance double layer capacitor includes first and second flat stacks of electrodes adapted to be housed in a closeable two-part capacitor case which includes only a single electrolyte seal. Each electrode stack has a plurality of electrodes connected in parallel, with the electrodes of one stack being interleaved with the electrodes of the other stack to form an interleaved stack, and with the electrodes of each stack being electrically connected to respective capacitor terminals. A porous separator is positioned against the electrodes of one stack before interleaving to prevent electrical shorts between the electrodes. The electrodes are made by folding a compressible, low resistance, aluminum-impregnated carbon cloth, made from activated carbon fibers, around a current collector foil, with a tab of the foils of each electrode of each stack being connected in parallel and connected to the respective capacitor terminal. The height of the interleaved stack is somewhat greater than the inside height of the closed capacitor case, thereby requiring compression of the interleaved electrode stack when placed inside of the case, and thereby maintaining the interleaved electrode stack under modest constant pressure. The closed capacitor case is filled with an electrolytic solution and sealed. A preferred electrolytic solution is made by dissolving an appropriate salt into acetonitrile (CH.sub.3 CN). In one embodiment, the two parts of the capacitor case are conductive and function as the capacitor terminals.

Multi-electrode double layer capacitor having single electrolyte seal and aluminum-impregnated carbon cloth electrodes

DOEpatents

Farahmandi, C Joseph [San Diego, CA; Dispennette, John M [Oceanside, CA; Blank, Edward [San Diego, CA; Kolb, Alan C [Rancho Santa Fe, CA

1999-05-25

A single cell, multi-electrode high performance double layer capacitor includes first and second flat stacks of electrodes adapted to be housed in a closeable two-part capacitor case which includes only a single electrolyte seal. Each electrode stack has a plurality of electrodes connected in parallel, with the electrodes of one stack being interleaved with the electrodes of the other stack to form an interleaved stack, and with the electrodes of each stack being electrically connected to respective capacitor terminals. A porous separator sleeve is inserted over the electrodes of one stack before interleaving to prevent electrical shorts between the electrodes. The electrodes are made by folding a compressible, low resistance, aluminum-impregnated carbon cloth, made from activated carbon fibers, around a current collector foil, with a tab of the foils of each electrode of each stack being connected in parallel and connected to the respective capacitor terminal. The height of the interleaved stack is somewhat greater than the inside height of the closed capacitor case, thereby requiring compression of the interleaved electrode stack when placed inside of the case, and thereby maintaining the interleaved electrode stack under modest constant pressure. The closed capacitor case is filled with an electrolytic solution and sealed. A preferred electrolytic solution is made by dissolving an appropriate salt into acetonitrile (CH.sub.3 CN). In one embodiment, the two parts of the capacitor case are conductive and function as the capacitor terminals.

Multi-electrode double layer capacitor having single electrolyte seal and aluminum-impregnated carbon cloth electrodes

DOEpatents

Farahmandi, C. Joseph; Dispennette, John M.; Blank, Edward; Kolb, Alan C.

1999-01-19

A single cell, multi-electrode high performance double layer capacitor includes first and second flat stacks of electrodes adapted to be housed in a closeable two-part capacitor case which includes only a single electrolyte seal. Each electrode stack has a plurality of electrodes connected in parallel, with the electrodes of one stack being interleaved with the electrodes of the other stack to form an interleaved stack, and with the electrodes of each stack being electrically connected to respective capacitor terminals. A porous separator sleeve is inserted over the electrodes of one stack before interleaving to prevent electrical shorts between the electrodes. The electrodes are made by folding a compressible, low resistance, aluminum-impregnated carbon cloth, made from activated carbon fibers, around a current collector foil, with a tab of the foils of each electrode of each stack being connected in parallel and connected to the respective capacitor terminal. The height of the interleaved stack is somewhat greater than the inside height of the closed capacitor case, thereby requiring compression of the interleaved electrode stack when placed inside of the case, and thereby maintaining the interleaved electrode stack under modest constant pressure. The closed capacitor case is filled with an electrolytic solution and sealed. A preferred electrolytic solution is made by dissolving an appropriate salt into acetonitrile (CH.sub.3 CN). In one embodiment, the two parts of the capacitor case are conductive and function as the capacitor terminals.

Multi-electrode double layer capacitor having single electrolyte seal and aluminum-impregnated carbon cloth electrodes

DOEpatents

Farahmandi, C.J.; Dispennette, J.M.; Blank, E.; Kolb, A.C.

1999-01-19

A single cell, multi-electrode high performance double layer capacitor includes first and second flat stacks of electrodes adapted to be housed in a closeable two-part capacitor case which includes only a single electrolyte seal. Each electrode stack has a plurality of electrodes connected in parallel, with the electrodes of one stack being interleaved with the electrodes of the other stack to form an interleaved stack, and with the electrodes of each stack being electrically connected to respective capacitor terminals. A porous separator sleeve is inserted over the electrodes of one stack before interleaving to prevent electrical shorts between the electrodes. The electrodes are made by folding a compressible, low resistance, aluminum-impregnated carbon cloth, made from activated carbon fibers, around a current collector foil, with a tab of the foils of each electrode of each stack being connected in parallel and connected to the respective capacitor terminal. The height of the interleaved stack is somewhat greater than the inside height of the closed capacitor case, thereby requiring compression of the interleaved electrode stack when placed inside of the case, and thereby maintaining the interleaved electrode stack under modest constant pressure. The closed capacitor case is filled with an electrolytic solution and sealed. A preferred electrolytic solution is made by dissolving an appropriate salt into acetonitrile (CH{sub 3}CN). In one embodiment, the two parts of the capacitor case are conductive and function as the capacitor terminals. 32 figs.

Characterization of micro-resonator based on enhanced metal insulator semiconductor capacitor for glucose recognition.

PubMed

Dhakal, Rajendra; Kim, E S; Jo, Yong-Hwa; Kim, Sung-Soo; Kim, Nam-Young

2017-03-01

We present a concept for the characterization of micro-fabricated based resonator incorporating air-bridge metal-insulator-semiconductor (MIS) capacitor to continuously monitor an individual's state of glucose levels based on frequency variation. The investigation revealed that, the micro-resonator based on MIS capacitor holds considerable promise for implementation and recognition as a glucose sensor for human serum. The discrepancy in complex permittivity as a result of enhanced capacitor was achieved for the detection and determination of random glucose concentration levels using a unique variation of capacitor that indeed results in an adequate variation of the resonance frequency. Moreover, the design and development of micro-resonator with enhanced MIS capacitor generate a resolution of 112.38 × 10 -3 pF/mg/dl, minimum detectable glucose level of 7.45mg/dl, and a limit of quantification of 22.58mg/dl. Additionally, this unique approach offers long-term reliability for mediator-free glucose sensing with a relative standard deviation of less than 0.5%. Copyright © 2017 IPEM. Published by Elsevier Ltd. All rights reserved.

Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-κ Dielectrics and SiGe Epitaxial Substrates

NASA Astrophysics Data System (ADS)

Hou, Zhao-Zhao; Wang, Gui-Lei; Xiang, Jin-Juan; Yao, Jia-Xin; Wu, Zhen-Hua; Zhang, Qing-Zhu; Yin, Hua-Xiang

2017-08-01

Not Available Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02303007, the National Key Research and Development Program of China under Grant No 2016YFA0301701, and the Youth Innovation Promotion Association of the Chinese Academy of Sciences under Grant No 2016112.

In Vitro-Generated Tc17 Cells Present a Memory Phenotype and Serve As a Reservoir of Tc1 Cells In Vivo

PubMed Central

Flores-Santibáñez, Felipe; Cuadra, Bárbara; Fernández, Dominique; Rosemblatt, Mariana V.; Núñez, Sarah; Cruz, Pablo; Gálvez-Cancino, Felipe; Cárdenas, J. César; Lladser, Alvaro; Rosemblatt, Mario; Bono, María Rosa; Sauma, Daniela

2018-01-01

Memory CD8+ T cells are ideal candidates for cancer immunotherapy because they can mediate long-term protection against tumors. However, the therapeutic potential of different in vitro-generated CD8+ T cell effector subsets to persist and become memory cells has not been fully characterized. Type 1 CD8+ T (Tc1) cells produce interferon-γ and are endowed with high cytotoxic capacity, whereas IL-17-producing CD8+ T (Tc17) cells are less cytotoxic but display enhanced self-renewal capacity. We sought to evaluate the functional properties of in vitro-generated Tc17 cells and elucidate their potential to become long lasting memory cells. Our results show that in vitro-generated Tc17 cells display a greater in vivo persistence and expansion in response to secondary antigen stimulation compared to Tc1 cells. When transferred into recipient mice, Tc17 cells persist in secondary lymphoid organs, present a recirculation behavior consistent with central memory T cells, and can shift to a Tc1 phenotype. Accordingly, Tc17 cells are endowed with a higher mitochondrial spare respiratory capacity than Tc1 cells and express higher levels of memory-related molecules than Tc1 cells. Together, these results demonstrate that in vitro-generated Tc17 cells acquire a central memory program and provide a lasting reservoir of Tc1 cells in vivo, thus supporting the use of Tc17 lymphocytes in the design of novel and more effective therapies. PMID:29472932

Analysis of stationary fuel cell dynamic ramping capabilities and ultra capacitor energy storage using high resolution demand data

NASA Astrophysics Data System (ADS)

Meacham, James R.; Jabbari, Faryar; Brouwer, Jacob; Mauzey, Josh L.; Samuelsen, G. Scott

Current high temperature fuel cell (HTFC) systems used for stationary power applications (in the 200-300 kW size range) have very limited dynamic load following capability or are simply base load devices. Considering the economics of existing electric utility rate structures, there is little incentive to increase HTFC ramping capability beyond 1 kWs -1 (0.4% s -1). However, in order to ease concerns about grid instabilities from utility companies and increase market adoption, HTFC systems will have to increase their ramping abilities, and will likely have to incorporate electrical energy storage (EES). Because batteries have low power densities and limited lifetimes in highly cyclic applications, ultra capacitors may be the EES medium of choice. The current analyses show that, because ultra capacitors have a very low energy storage density, their integration with HTFC systems may not be feasible unless the fuel cell has a ramp rate approaching 10 kWs -1 (4% s -1) when using a worst-case design analysis. This requirement for fast dynamic load response characteristics can be reduced to 1 kWs -1 by utilizing high resolution demand data to properly size ultra capacitor systems and through demand management techniques that reduce load volatility.

Hybrid capacitors utilizing halogen-based redox reactions at interface between carbon positive electrode and aqueous electrolytes

NASA Astrophysics Data System (ADS)

Yamazaki, Shigeaki; Ito, Tatsuya; Murakumo, Yuka; Naitou, Masashi; Shimooka, Toshiharu; Yamagata, Masaki; Ishikawa, Masashi

2016-09-01

We propose novel hybrid capacitors (HCs) with electrolyte-involved redox reactions of bromide or iodide species by pretreatment of an activated carbon positive electrode. The treatment is simple; impregnation of pores at an activated carbon fiber cloth (ACFC) as a positive electrode with bromine- or iodine-containing water before cell assembly. The treated positive electrode is applied to a HC cell with a non-treated negative electrode of ACFC and its electrochemical performance is investigated by galvanostatic cycling and leakage current tests. Few studies on such "electrolytic" charge storage systems have provided acceptable capacitor performance because of inevitable self-discharge caused by diffusion of charged species form an electrode to the other one through an electrolyte. Nevertheless, our electrolyte-redox-based HCs show excellent performance without undesirable diffusion of charged species. Moreover, the present HC utilizing a bromide redox system fulfills a practical cell voltage of 1.8 V in spite of an aqueous electrolyte system. This high voltage provides excellent energy density, which is 5 times higher than that in a conventional aqueous electric double-layer capacitor (EDLC), and 1.2 times higher even than that in a 2.7 V-class non-aqueous EDLC, while keeping high charge-discharge rate capability.

High speed capacitor-inverter based carbon nanotube full adder.

PubMed

Navi, K; Rashtian, M; Khatir, A; Keshavarzian, P; Hashemipour, O

2010-03-18

Carbon Nanotube filed-effect transistor (CNFET) is one of the promising alternatives to the MOS transistors. The geometry-dependent threshold voltage is one of the CNFET characteristics, which is used in the proposed Full Adder cell. In this paper, we present a high speed Full Adder cell using CNFETs based on majority-not (Minority) function. Presented design uses eight transistors and eight capacitors. Simulation results show significant improvement in terms of delay and power-delay product in comparison to contemporary CNFET Adder Cells. Simulations were carried out using HSPICE based on CNFET model with 0.6 V VDD.

Design and development of cell queuing, processing, and scheduling modules for the iPOINT input-buffered ATM testbed

NASA Astrophysics Data System (ADS)

Duan, Haoran

1997-12-01

This dissertation presents the concepts, principles, performance, and implementation of input queuing and cell-scheduling modules for the Illinois Pulsar-based Optical INTerconnect (iPOINT) input-buffered Asynchronous Transfer Mode (ATM) testbed. Input queuing (IQ) ATM switches are well suited to meet the requirements of current and future ultra-broadband ATM networks. The IQ structure imposes minimum memory bandwidth requirements for cell buffering, tolerates bursty traffic, and utilizes memory efficiently for multicast traffic. The lack of efficient cell queuing and scheduling solutions has been a major barrier to build high-performance, scalable IQ-based ATM switches. This dissertation proposes a new Three-Dimensional Queue (3DQ) and a novel Matrix Unit Cell Scheduler (MUCS) to remove this barrier. 3DQ uses a linked-list architecture based on Synchronous Random Access Memory (SRAM) to combine the individual advantages of per-virtual-circuit (per-VC) queuing, priority queuing, and N-destination queuing. It avoids Head of Line (HOL) blocking and provides per-VC Quality of Service (QoS) enforcement mechanisms. Computer simulation results verify the QoS capabilities of 3DQ. For multicast traffic, 3DQ provides efficient usage of cell buffering memory by storing multicast cells only once. Further, the multicast mechanism of 3DQ prevents a congested destination port from blocking other less- loaded ports. The 3DQ principle has been prototyped in the Illinois Input Queue (iiQueue) module. Using Field Programmable Gate Array (FPGA) devices, SRAM modules, and integrated on a Printed Circuit Board (PCB), iiQueue can process incoming traffic at 800 Mb/s. Using faster circuit technology, the same design is expected to operate at the OC-48 rate (2.5 Gb/s). MUCS resolves the output contention by evaluating the weight index of each candidate and selecting the heaviest. It achieves near-optimal scheduling and has a very short response time. The algorithm originates from a heuristic strategy that leads to 'socially optimal' solutions, yielding a maximum number of contention-free cells being scheduled. A novel mixed digital-analog circuit has been designed to implement the MUCS core functionality. The MUCS circuit maps the cell scheduling computation to the capacitor charging and discharging procedures that are conducted fully in parallel. The design has a uniform circuit structure, low interconnect counts, and low chip I/O counts. Using 2 μm CMOS technology, the design operates on a 100 MHz clock and finds a near-optimal solution within a linear processing time. The circuit has been verified at the transistor level by HSPICE simulation. During this research, a five-port IQ-based optoelectronic iPOINT ATM switch has been developed and demonstrated. It has been fully functional with an aggregate throughput of 800 Mb/s. The second-generation IQ-based switch is currently under development. Equipped with iiQueue modules and MUCS module, the new switch system will deliver a multi-gigabit aggregate throughput, eliminate HOL blocking, provide per-VC QoS, and achieve near-100% link bandwidth utilization. Complete documentation of input modules and trunk module for the existing testbed, and complete documentation of 3DQ, iiQueue, and MUCS for the second-generation testbed are given in this dissertation.

Charging a Capacitor with a Photovoltaic Module

ERIC Educational Resources Information Center

Aguilar, Horacio Munguía; Maldonado, Rigoberto Franco; Navarro, Luis Barba

2017-01-01

Charging a capacitor with a photovoltaic module is an experiment which reveals a lot about the modules characteristics. It is customary to represent these characteristics with an equivalent circuit whose elements represent its physical parameters. The behavior of a photovoltaic module is very similar to that of a single cell but the electric…

Palm top plasma focus device as a portable pulsed neutron source.

PubMed

Rout, R K; Niranjan, Ram; Mishra, P; Srivastava, R; Rawool, A M; Kaushik, T C; Gupta, Satish C

2013-06-01

Development of a palm top plasma focus device generating (5.2 ± 0.8) × 10(4) neutrons∕pulse into 4π steradians with a pulse width of 15 ± 3 ns is reported for the first time. The weight of the system is less than 1.5 kg. The system comprises a compact capacitor bank, a triggered open air spark gap switch, and a sealed type miniature plasma focus tube. The setup is around 14 cm in diameter and 12.5 cm in length. The energy driver for the unit is a capacitor bank of four cylindrical commercially available electrolytic capacitors. Each capacitor is of 2 μF capacity, 4.5 cm in diameter, and 9.8 cm in length. The cost of each capacitor is less than US$ 10. The internal diameter and the effective length of the plasma focus unit are 2.9 cm and 5 cm, respectively. A DC to DC converter power supply powered by two rechargeable batteries charges the capacitor bank to the desired voltage and also provides a trigger pulse of -15 kV to the spark gap. The maximum energy of operation of the device is 100 J (8 μF, 5 kV, 59 kA) with deuterium gas filling pressure of 3 mbar. The neutrons have also been produced at energy as low as 36 J (3 kV) of operation. The neutron diagnostics are carried out with a bank of (3)He detectors and with a plastic scintillator detector. The device is portable, reusable, and can be operated for multiple shots with a single gas filling.

Palm top plasma focus device as a portable pulsed neutron source

NASA Astrophysics Data System (ADS)

Rout, R. K.; Niranjan, Ram; Mishra, P.; Srivastava, R.; Rawool, A. M.; Kaushik, T. C.; Gupta, Satish C.

2013-06-01

Development of a palm top plasma focus device generating (5.2 ± 0.8) × 104 neutrons/pulse into 4π steradians with a pulse width of 15 ± 3 ns is reported for the first time. The weight of the system is less than 1.5 kg. The system comprises a compact capacitor bank, a triggered open air spark gap switch, and a sealed type miniature plasma focus tube. The setup is around 14 cm in diameter and 12.5 cm in length. The energy driver for the unit is a capacitor bank of four cylindrical commercially available electrolytic capacitors. Each capacitor is of 2 μF capacity, 4.5 cm in diameter, and 9.8 cm in length. The cost of each capacitor is less than US 10. The internal diameter and the effective length of the plasma focus unit are 2.9 cm and 5 cm, respectively. A DC to DC converter power supply powered by two rechargeable batteries charges the capacitor bank to the desired voltage and also provides a trigger pulse of -15 kV to the spark gap. The maximum energy of operation of the device is 100 J (8 μF, 5 kV, 59 kA) with deuterium gas filling pressure of 3 mbar. The neutrons have also been produced at energy as low as 36 J (3 kV) of operation. The neutron diagnostics are carried out with a bank of 3He detectors and with a plastic scintillator detector. The device is portable, reusable, and can be operated for multiple shots with a single gas filling.

TLR4 ligands LPS and MPLA differentially regulate effector and memory CD8+ T cell differentiation

PubMed Central

Cui, Weiguo; Joshi, Nikhil S.; Liu, Ying; Meng, Hailong; Kleinstein, Steven H; Kaech, Susan M.

2014-01-01

Vaccines formulated with non-replicating pathogens require adjuvants to help bolster immunogenicity. The role of adjuvants in antibody production has been well studied, but how they influence memory CD8+ T cell differentiation remains poorly defined. Here we implemented dendritic cell (DC)-mediated immunization to study the effects of commonly used adjuvants, TLR ligands, on effector and memory CD8+ T cell differentiation in mice. Intriguingly, we found that the TLR4 ligand LPS was far more superior to other TLR ligands in generating memory CD8+ T cells upon immunization. LPS boosted clonal expansion similar to the other adjuvants, but fewer of the activated CD8+ T cells died during contraction, generating a larger pool of memory cells. Surprisingly, monophosphoryl lipid A (MPLA), another TLR4 ligand, enhanced clonal expansion of effector CD8+ T cells, but also promoted their terminal differentiation and contraction; thus, fewer memory CD8+ T cells formed and MPLA-primed animals were less protected against secondary infection compared to those primed with LPS. Furthermore, gene expression profiling revealed that LPS-primed effector cells displayed a stronger pro-memory gene expression signature, whereas the gene expression profile of MPLA-primed effector cells aligned closer with terminal effector CD8+ T cells. Lastly, we demonstrated that the LPS-TLR4-derived “pro-memory” signals were MyD88, but not Trif, dependent. This study reveals the influential power of adjuvants on the quantity and quality of CD8+ T cell memory, and that attention to adjuvant selection is crucial because boosting effector cell expansion may not always equate with more memory T cells or greater protection. PMID:24659688

Important parameters affecting the cell voltage of aqueous electrical double-layer capacitors

NASA Astrophysics Data System (ADS)

Wu, Tzu-Ho; Hsu, Chun-Tsung; Hu, Chi-Chang; Hardwick, Laurence J.

2013-11-01

This study discusses and demonstrates how the open-circuit potential and charges stored in the working potential window on positive and negative electrodes affect the cell voltage of carbon-based electrical double-layer capacitors (EDLCs) in aqueous electrolytes. An EDLC consisting of two activated carbon electrodes is employed as the model system for identifying these key parameters although the potential window of water decomposition can be simply determined by voltammetric methods. First, the capacitive performances of an EDLC with the same charge on positive and negative electrodes are evaluated by cyclic voltammetric, charge-discharge, electrochemical impedance spectroscopic (EIS) analyses, and inductance-capacitance-resistance meter (LCR meter). The principles for obtaining the highest acceptable cell voltage of such symmetric ECs with excellent reversibility and capacitor-like behaviour are proposed. Aqueous charge-balanced EDLCs can be operated as high as 2.0 V with high energy efficiency (about 90%) and only 4% capacitance loss after the 600-cycle stability checking. The necessity of charge balance (but not capacitance balance) for positive and negative electrodes is substantiated from the lower acceptable cell voltage of charge-unbalanced EDLCs.

700 F hybrid capacitors cells composed of activated carbon and Li4Ti5O12 microspheres with ultra-long cycle life

NASA Astrophysics Data System (ADS)

Ruan, Dianbo; Kim, Myeong-Seong; Yang, Bin; Qin, Jun; Kim, Kwang-Bum; Lee, Sang-Hyun; Liu, Qiuxiang; Tan, Lei; Qiao, Zhijun

2017-10-01

To address the large-scale application demands of high energy density, high power density, and long cycle lifetime, 700-F hybrid capacitor pouch cells have been prepared, comprising ∼240-μm-thick activated carbon cathodes, and ∼60-μm-thick Li4Ti5O12 anodes. Microspherical Li4Ti5O12 (M-LTO) synthesized by spray-drying features 200-400 nm primary particles and interconnected nanopore structures. M-LTO half-cells exhibits high specific capacities (175 mAhh g-1), good rate capabilities (148 mAhh g-1 at 20 C), and ultra-long cycling stabilities (90% specific capacity retention after 10,000 cycles). In addition, the obtained hybrid capacitors comprising activated carbon (AC) and M-LTO shows excellent cell performances, achieving a maximum energy density of 51.65 Wh kg-1, a maximum power density of 2466 W kg-1, and ∼92% capacitance retention after 10,000 cycles, thus meeting the demands for large-scale applications such as trolleybuses.

Characterization of an Autonomous Non-Volatile Ferroelectric Memory Latch

NASA Technical Reports Server (NTRS)

John, Caroline S.; MacLeod, Todd C.; Evans, Joe; Ho, Fat D.

2011-01-01

We present the electrical characterization of an autonomous non-volatile ferroelectric memory latch using the principle that when an electric field is applied to a ferroelectriccapacitor,the positive and negative remnant polarization charge states of the capacitor are denoted as either data 0 or data 1. The properties of the ferroelectric material to store an electric polarization in the absence of an electric field make the device non-volatile. Further the memory latch is autonomous as it operates with the ground, power and output node connections, without any externally clocked control line. The unique quality of this latch circuit is that it can be written when powered off. The advantages of this latch over flash memories are: a) It offers unlimited reads/writes b) works on symmetrical read/write cycles. c) The latch is asynchronous. The circuit was initially developed by Radiant Technologies Inc., Albuquerque, New Mexico.

Electrical and ferroelectric properties of RF sputtered PZT/SBN on silicon for non-volatile memory applications

NASA Astrophysics Data System (ADS)

Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

2018-02-01

We report the integration of multilayer ferroelectric film deposited by RF magnetron sputtering and explore the electrical characteristics for its application as the gate of ferroelectric field effect transistor for non-volatile memories. PZT (Pb[Zr0.35Ti0.65]O3) and SBN (SrBi2Nb2O9) ferroelectric materials were selected for the stack fabrication due to their large polarization and fatigue free properties respectively. Electrical characterization has been carried out to obtain memory window, leakage current density, PUND and endurance characteristics. Fabricated multilayer ferroelectric film capacitor structure shows large memory window of 17.73 V and leakage current density of the order 10-6 A cm-2 for the voltage sweep of -30 to +30 V. This multilayer gate stack of PZT/SBN shows promising endurance property with no degradation in the remnant polarization for the read/write iteration cycles upto 108.

Multilayer Lead-Free Ceramic Capacitors with Ultrahigh Energy Density and Efficiency.

PubMed

Li, Jinglei; Li, Fei; Xu, Zhuo; Zhang, Shujun

2018-06-26

The utilization of antiferroelectric (AFE) materials is thought to be an effective approach to enhance the energy density of dielectric capacitors. However, the high energy dissipation and inferior reliability that are associated with the antiferroelectric-ferroelectric phase transition are the main issues that restrict the applications of antiferroelectric ceramics. Here, simultaneously achieving high energy density and efficiency in a dielectric ceramic is proposed by combining antiferroelectric and relaxor features. Based on this concept, a lead-free dielectric (Na 0.5 Bi 0.5 )TiO 3 -x(Sr 0.7 Bi 0.2 )TiO 3 (NBT-xSBT) system is investigated and the corresponding multilayer ceramic capacitors (MLCCs) are fabricated. A record-high energy density of 9.5 J cm -3 , together with a high energy efficiency of 92%, is achieved in NBT-0.45SBT multilayer ceramic capacitors, which consist of ten dielectric layers with the single-layer thickness of 20 µm and the internal electrode area of 6.25 mm 2 . Furthermore, the newly developed capacitor exhibits a wide temperature usage range of -60 to 120 °C, with an energy-density variation of less than 10%, and satisfactory cycling reliability, with degradation of less than 8% over 10 6 cycles. These characteristics demonstrate that the NBT-0.45SBT multilayer ceramic is a promising candidate for high-power energy storage applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Sol-gel derived electrode materials for supercapacitor applications

NASA Astrophysics Data System (ADS)

Lin, Chuan

1998-12-01

Electrochemical capacitors have been receiving increasing interest in recent years for use in energy storage systems because of their high energy and power density and long cycle lifes. Possible applications of electrochemical capacitors include high power pulsed lasers, hybrid power system for electric vehicles, etc. In this dissertation, the preparation of electrode materials for use as electrochemical capacitors has been studied using the sol-gel process. The high surface area electrode materials explored in this work include a synthetic carbon xerogel for use in a double-layer capacitor, a cobalt oxide xerogel for use in a pseudocapacitor, and a carbon-ruthenium xerogel composite, which utilizes both double-layer and faradaic capacitances. The preparation conditions of these materials were investigated in detail to maximize the surface area and optimize the pore size so that more energy could be stored while minimizing mass transfer limitations. The microstructures of the materials were also correlated with their performance as electrochemical capacitors to improve their energy and power densities. Finally, an idealistic mathematical model, including both double-layer and faradaic processes, was developed and solved numerically. This model can be used to perform the parametric studies of an electrochemical capacitor so as to gain a better understanding of how the capacitor works and also how to improve cell operations and electrode materials design.

Ceramic capacitor insulation resistance failures accelerated by low voltage

NASA Technical Reports Server (NTRS)

Brennan, T. F.

1978-01-01

Ceramic capacitors failed insulation resistance testing at less than one-tenth their rated voltage. Many failures recovered as the voltage was increased. Comprehensive failure analysis techniques, some of which are unprecedented, were used to examine these failures. It was determined that there was more than one failure mechanism, and the results indicate a need for special additional screening.

Lead zirconate titanate (PZT)-based thin film capacitors for embedded passive applications

NASA Astrophysics Data System (ADS)

Kim, Taeyun

Investigations on the key processing parameters and properties relationship for lead zirconate titanate (PZT, 52/48) based thin film capacitors for embedded passive capacitor application were performed using electroless Ni coated Cu foils as substrates. Undoped and Ca-doped PZT (52/48) thin film capacitors were prepared on electroless Ni coated Cu foil by chemical solution deposition. For PZT (52/48) thin film capacitors on electroless Ni coated Cu foil, voltage independent (zero tunability) capacitance behavior was observed. Dielectric constant reduced to more than half of the identical capacitor processed on Pt/SiO2/Si. Dielectric properties of the capacitors were mostly dependent on the crystallization temperature. Capacitance densities of almost 350 nF/cm2 and 0.02˜0.03 of loss tangent were routinely measured for capacitors crystallized at 575˜600°C. Leakage current showed dependence on film thickness and crystallization temperature. From a two-capacitor model, the existence of a low permittivity interface layer (permittivity ˜30) was suggested. For Ca-doped PZT (52/48) thin film capacitors prepared on Pt, typical ferroelectric and dielectric properties were measured up to 5 mol% Ca doping. When Ca-doped PZT (52/48) thin film capacitors were prepared on electroless Ni coated Cu foil, phase stability was influenced by Ca doping and phosphorous content. Dielectric properties showed dependence on the crystallization temperature and phosphorous content. Capacitance density of ˜400 nF/cm2 was achieved, which is an improvement by more than 30% compared to undoped composition. Ca doping also reduced the temperature coefficient of capacitance (TCC) less than 10%, all of them were consistent in satisfying the requirements of embedded passive capacitor. Leakage current density was not affected significantly by doping. To tailor the dielectric and reliability properties, ZrO2 was selected as buffer layer between PZT and electroless Ni. Only RF magnetron sputtering process could yield stable ZrO2 layers on electroless Ni coated Cu foil. Other processes resulted in secondary phase formation, which supports the reaction between PZT capacitor and electroless Ni might be dominated by phosphorous component. (Abstract shortened by UMI.)

A novel barium strontium titanate/nickel/titanium nitride/silicon structure for gigabit-scale DRAM capacitors

NASA Astrophysics Data System (ADS)

Ritums, Dwight Lenards

A materials system has been developed for advanced oxide high permittivity capacitors for use in Dynamic Random Access Memory (DRAM) applications. A capacitor test structure has been fabricated, demonstrating the integration of this materials system onto Si. It is a 3-D stacked electrode structure which uses the high-K dielectric material Ba1- xSrxTiO 3 (BST) and a novel Ni/TiN bottom electrode system. The structure was grown using pulsed laser deposition (PLD), photo-assisted metal-organic chemical vapor deposition (PhA-MOCVD), and electron beam deposition, and resulted in thin film capacitors with dielectric constants over 500. Other advanced oxides, principally SrVO3, were also investigated for use as electrode materials. The fabricated test structure is 3 μgm wide and 1 μm thick. RIE was used to generate the 3-D structure, and an etch gas recipe was developed to pattern the 3-D electrode structure onto the TiN. The Ni was deposited by electron beam deposition, and the BST was grown by PLD and PhA-MOCVD. Conformal coating of the electrode by the BST was achieved. The film structure was analyzed with XRD, SEM, EDS, XPS, AES, and AFM, and the electronic properties of the devices were characterized. Permittivites of up to 500 were seen in the PLD-grown films, and values up to 700 were seen in the MOCVD- deposited films. The proof of concept of a high permittivity material directly integrated onto Si has been demonstrated for this capacitor materials system. With further lithographic developments, this system can be applied toward gigabit device fabrication.

Power factor improvement in three-phase networks with unbalanced inductive loads using the Roederstein ESTAmat RPR power factor controller

NASA Astrophysics Data System (ADS)

Diniş, C. M.; Cunţan, C. D.; Rob, R. O. S.; Popa, G. N.

2018-01-01

The paper presents the analysis of a power factor with capacitors banks, without series coils, used for improving power factor for a three-phase and single-phase inductive loads. In the experimental measurements, to improve the power factor, the Roederstein ESTAmat RPR power factor controller can command up to twelve capacitors banks, while experimenting using only six capacitors banks. Six delta capacitors banks with approximately equal reactive powers were used for experimentation. The experimental measurements were carried out with a three-phase power quality analyser which worked in three cases: a case without a controller with all capacitors banks permanently parallel connected with network, and two other cases with power factor controller (one with setting power factor at 0.92 and the other one at 1). When performing experiments with the power factor controller, a current transformer was used to measure the current on one phase (at a more charged or less loaded phase).

Nonaqueous electrolyte for electrical storage devices

DOEpatents

McEwen, Alan B.; Yair, Ein-Eli

1999-01-01

Improved nonaqueous electrolytes for application in electrical storage devices such as electrochemical capacitors or batteries are disclosed. The electrolytes of the invention contain salts consisting of alkyl substituted, cyclic delocalized aromatic cations, and their perfluoro derivatives, and certain polyatomic anions having a van der Waals volume less than or equal to 100 .ANG..sup.3, preferably inorganic perfluoride anions and most preferably PF.sub.6.sup.-, the salts being dissolved in organic liquids, and preferably alkyl carbonate solvents, or liquid sulfur dioxide or combinations thereof, at a concentration of greater than 0.5M and preferably greater than 1.0M. Exemplary electrolytes comprise 1-ethyl-3-methylimidazolium hexafluorophosphate dissolved in a cyclic or acylic alkyl carbonate, or methyl formate, or a combination therof. These improved electrolytes have useful characteristics such as higher conductivity, higher concentration, higher energy storage capabilities, and higher power characteristics compared to prior art electrolytes. Stacked capacitor cells using electrolytes of the invention permit high energy, high voltage storage.

Stable electrolyte for high voltage electrochemical double-layer capacitors

DOE PAGES

Ruther, Rose E.; Sun, Che -Nan; Holliday, Adam; ...

2016-12-28

A simple electrolyte consisting of NaPF 6 salt in 1,2-dimethoxyethane (DME) can extend the voltage window of electric double-layer capacitors (EDLCs) to >3.5 V. DME does not passivate carbon electrodes at very negative potentials (near Na/Na +), extending the practical voltage window by about 1.0 V compared to standard, non-aqueous electrolytes based on acetonitrile. The voltage window is demonstrated in two- and three-electrode cells using a combination of electrochemical impedance spectroscopy (EIS), charge-discharge cycling, and measurements of leakage current. DME-based electrolytes cannot match the high conductivity of acetonitrile solutions, but they can satisfy applications that demand high energy density atmore » moderate power. The conductivity of NaPF 6 in DME is comparable to commercial lithium-ion battery electrolytes and superior to most ionic liquids. Lastly, factors that limit the voltage window and EDLC energy density are discussed, and strategies to further boost energy density are proposed.« less

Low-dimensional carbon and MXene-based electrochemical capacitor electrodes.

PubMed

Yoon, Yeoheung; Lee, Keunsik; Lee, Hyoyoung

2016-04-29

Due to their unique structure and outstanding intrinsic physical properties such as extraordinarily high electrical conductivity, large surface area, and various chemical functionalities, low-dimension-based materials exhibit great potential for application in electrochemical capacitors (ECs). The electrical properties of electrochemical capacitors are determined by the electrode materials. Because energy charge storage is a surface process, the surface properties of the electrode materials greatly influence the electrochemical performance of the cell. Recently, graphene, a single layer of sp(2)-bonded carbon atoms arrayed into two-dimensional carbon nanomaterial, has attracted wide interest as an electrode material for electrochemical capacitor applications due to its unique properties, including a high electrical conductivity and large surface area. Several low-dimensional materials with large surface areas and high conductivity such as onion-like carbons (OLCs), carbide-derived carbons (CDCs), carbon nanotubes (CNTs), graphene, metal hydroxide, transition metal dichalcogenides (TMDs), and most recently MXene, have been developed for electrochemical capacitors. Therefore, it is useful to understand the current issues of low-dimensional materials and their device applications.

Method of making a multi-electrode double layer capacitor having single electrolyte seal and aluminum-impregnated carbon cloth electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Farahmandi, C. Joseph; Dispennette, John M.; Blank, Edward

A method of making a double layer capacitior includes first and second flat stacks of electrodes adapted to be housed in a closeable two-part capacitor case which includes only a single electrolyte seal. Each electrode stack has a plurality of electrodes connected in parallel, with the electrodes of one stack being interleaved with the electrodes of the other stack to form an interleaved stack, and with the electrodes of each stack being electrically connected to respective capacitor terminals. A porous separator is positioned against the electrodes of one stack before interleaving to prevent electrical shorts between the electrodes. The electrodesmore » are made by folding a compressible, low resistance, aluminum-impregnated carbon cloth, made from activated carbon fibers, around a current collector foil, with a tab of the foils of each electrode of each stack being connected in parallel and connected to the respective capacitor terminal. The height of the interleaved stack is somewhat greater than the inside height of the closed capacitor case, thereby requiring compression of the interleaved electrode stack when placed inside of the case, and thereby maintaining the interleaved electrode stack under modest constant pressure. The closed capacitor case is filled with an electrolytic solution and sealed. A preferred electrolytic solution is made by dissolving an appropriate salt into acetonitrile (CH.sub.3 CN). In one embodiment, the two arts of the capacitor case are conductive and function as the capacitor terminals.« less

Switching kinetics of SiC resistive memory for harsh environments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morgan, K. A., E-mail: kam2g11@soton.ac.uk; Huang, R.; Groot, C. H. de

2015-07-15

Cu/a-SiC/Au resistive memory cells are measured using voltage pulses and exhibit the highest R{sub OFF}/R{sub ON} ratio recorded for any resistive memory. The switching kinetics are investigated and fitted to a numerical model, using thermal conductivity and resistivity properties of the dielectric. The SET mechanism of the Cu/a-SiC/Au memory cells is found to be due to ionic motion without joule heating contributions, whereas the RESET mechanism is found to be due to thermally assisted ionic motion. The conductive filament diameter is extracted to be around 4nm. The high thermal conductivity and resistivity for the Cu/a-SiC/Au memory cells result in slowmore » switching but with high thermal reliability and stability, showing potential for use in harsh environments. Radiation properties of SiC memory cells are investigated. No change was seen in DC sweep or pulsed switching nor in conductive mechanisms, up to 2Mrad(Si) using {sup 60}Co gamma irradiation.« less

Layer-by-layer charging in non-volatile memory devices using embedded sub-2 nm platinum nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ramalingam, Balavinayagam; Zheng, Haisheng; Gangopadhyay, Shubhra, E-mail: gangopadhyays@missouri.edu

In this work, we demonstrate multi-level operation of a non-volatile memory metal oxide semiconductor capacitor by controlled layer-by-layer charging of platinum nanoparticle (PtNP) floating gate devices with defined gate voltage bias ranges. The device consists of two layers of ultra-fine, sub-2 nm PtNPs integrated between Al{sub 2}O{sub 3} tunneling and separation layers. PtNP size and interparticle distance were varied to control the particle self-capacitance and associated Coulomb charging energy. Likewise, the tunneling layer thicknesses were also varied to control electron tunneling to the first and second PtNP layers. The final device configuration with optimal charging behavior and multi-level programming was attainedmore » with a 3 nm Al{sub 2}O{sub 3} initial tunneling layer, initial PtNP layer with particle size 0.54 ± 0.12 nm and interparticle distance 4.65 ± 2.09 nm, 3 nm Al{sub 2}O{sub 3} layer to separate the PtNP layers, and second particle layer with 1.11 ± 0.28 nm PtNP size and interparticle distance 2.75 ± 1.05 nm. In this device, the memory window of the first PtNP layer saturated over a programming bias range of 7 V to 14 V, after which the second PtNP layer starts charging, exhibiting a multi-step memory window with layer-by-layer charging.« less

A study of charged particles/radiation damage to VLSI device materials

NASA Technical Reports Server (NTRS)

Okyere, John G.

1987-01-01

Future spacecraft systems such as the manned space station will be subjected to low-dose long term radiation particles. Most electronic systems are affected by such particles. There is therefore a great need to understand device physics and failure mechanisms affected by radiation and to design circuits that would be less susceptible to radiation. Using 2 MeV electron radiation and bias temperature aging, it was found that MOS capacitors that were prepositively biased have lower flatband voltage shift and lesser increase in density of surface state charge than those that were not prepositively biased. In addition, it was shown that there is continued recovery of flatband voltage and density of state charge in irradiated capacitors during both room temperature anneal and 137 degree anneal. When nMOS transistors were subjected to 1 MeV proton radiation, charge pumping and current versus voltage measurements indicated that transconductance degradation, threshold voltage shifts and changes in interface states density may be the primary cause of nMOS transistor failure after radiation. Simulation studies using SPICE were performed on CMOS SRAM cells of various transistor sizes. It is shown that transistor sizing affects the noise margins of CMOS SRAM cells, and that as the beta ratio of the transistors of the CMOS SRAM cell decreases, the effective noise margin of the SRAM cell increases. Some suggestions were made in connection with the design of CMOS SRAMS that are hardened against single event upsets.

Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parui, Subir, E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu; Ribeiro, Mário; Atxabal, Ainhoa

The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al{sub 2}O{sub 3}/NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important formore » understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.« less

Origin and differentiation of human memory CD8 T cells after vaccination.

PubMed

Akondy, Rama S; Fitch, Mark; Edupuganti, Srilatha; Yang, Shu; Kissick, Haydn T; Li, Kelvin W; Youngblood, Ben A; Abdelsamed, Hossam A; McGuire, Donald J; Cohen, Kristen W; Alexe, Gabriela; Nagar, Shashi; McCausland, Megan M; Gupta, Satish; Tata, Pramila; Haining, W Nicholas; McElrath, M Juliana; Zhang, David; Hu, Bin; Greenleaf, William J; Goronzy, Jorg J; Mulligan, Mark J; Hellerstein, Marc; Ahmed, Rafi

2017-12-21

The differentiation of human memory CD8 T cells is not well understood. Here we address this issue using the live yellow fever virus (YFV) vaccine, which induces long-term immunity in humans. We used in vivo deuterium labelling to mark CD8 T cells that proliferated in response to the virus and then assessed cellular turnover and longevity by quantifying deuterium dilution kinetics in YFV-specific CD8 T cells using mass spectrometry. This longitudinal analysis showed that the memory pool originates from CD8 T cells that divided extensively during the first two weeks after infection and is maintained by quiescent cells that divide less than once every year (doubling time of over 450 days). Although these long-lived YFV-specific memory CD8 T cells did not express effector molecules, their epigenetic landscape resembled that of effector CD8 T cells. This open chromatin profile at effector genes was maintained in memory CD8 T cells isolated even a decade after vaccination, indicating that these cells retain an epigenetic fingerprint of their effector history and remain poised to respond rapidly upon re-exposure to the pathogen.

Antigen-dependent proliferation and cytokine induction in respiratory syncytial virus-infected cotton rats reflect the presence of effector-memory T cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Richter, Bettina W.M.; Onuska, Jaya M.; Niewiesk, Stefan

2005-06-20

Respiratory syncytial virus (RSV) is a major cause of lower airway disease in infants and children. Immunity to RSV is not long lasting, resulting in re-occurring infections throughout life. Effective long-lived immunity results when central-memory T cells that proliferate vigorously and secrete IL-2 are present. In contrast, effector-memory T cells that mainly produce IFN-{gamma}, facilitate virus clearance but are not long lived. To identify the type of memory response induced after RSV-A (Long) infection, we characterized the kinetics of the antigen-specific immune response and identified the types of cytokines induced. RSV-specific lymphocytic proliferation following primary and secondary infection was similar,more » and in both cases responses waned within a short period of time. In addition, mRNA for IFN-{gamma} but not IL-2 was induced in RSV-specific CD4{sup +} T cells. This supports the idea that the presence of effector-memory rather than central-memory T cells contributes to the ineffectiveness of the immune response to RSV.« less

Functionalized carbon nanotube based hybrid electrochemical capacitors using neutral bromide redox-active electrolyte for enhancing energy density

NASA Astrophysics Data System (ADS)

Tang, Xiaohui; Lui, Yu Hui; Chen, Bolin; Hu, Shan

2017-06-01

A hybrid electrochemical capacitor (EC) with enhanced energy density is realized by integrating functionalized carbon nanotube (FCNT) electrodes with redox-active electrolyte that has a neutral pH value (1 M Na2SO4 and 0.5 M KBr mixed aqueous solution). The negative electrode shows an electric double layer capacitor-type behavior. On the positive electrode, highly reversible Br-/Br3- redox reactions take place, presenting a battery-type behavior, which contributes to increase the capacitance of the hybrid cell. The voltage window of the whole cell is extended up to 1.5 V because of the high over-potentials of oxygen and hydrogen evolution reactions in the neutral electrolyte. Compared with raw CNT, the FCNT has better wettability in the aqueous electrolyte and contributes to increase the electric double layer capacitance of the cell. As a result, the maximum energy density of 28.3 Wh kg-1 is obtained from the hybrid EC at 0.5 A g-1 without sacrificing its power density, which is around 4 times larger than that of the electrical double layer capacitor constructed by FCNT electrodes and 1 M Na2SO4 electrolyte. Moreover, the discharge capacity retained 86.3% of its initial performance after 10000 cycles of galvanostatic charge and discharge test (10 A/g), suggesting its long life cycle even at high current loading.

Hydrothermal Barium Titanate Thin-Film Characteristics and their Suitability as Decoupling Capacitors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raj, P. Markondeya; Lee, Baik-Woo; Kang, Nam-Kee

System integration and miniaturization demands are driving integrated thin film capacitor technologies towards ultrahigh capacitance densities for noise-free power supply, power conversion and efficient power management. Hydrothermal route can deposit crystalline ferroelectric films at low temperatures of less than 150 C. It is hence an attractive route for integrating high permittivity thin film capacitors on organic, silicon or flex substrates. However, hydrothermal films are not commercialized so far because of their inferior insulation characteristics. Embedded hydroxyl groups are attributed to be the cause for high leakage currents, temperature dependent properties and lower Breakdown Voltages (BDVs). This paper discusses the dielectricmore » characteristics such as capacitance density, leakage currents and Temperature Coefficient of Capacitance (TCC) of hydrothermal barium titanate films and correlates them to the embedded water and OH groups, film morphology, stoichiometry and crystallinity. With thermal treatment, majority of the OH groups can be removed leading to improved insulation characteristics. The room temperature I-V characteristics agreed with ionic conduction models for films baked at 160 C while higher baking temperatures of above 300 C resulted in Poole-Frenkel type conduction. A brief perspective is provided on the suitability of hydrothermal thin film capacitors for power supply applications.« less

A new FIB fabrication method for micropillar specimens for three-dimensional observation using scanning transmission electron microscopy.

PubMed

Fukuda, Muneyuki; Tomimatsu, Satoshi; Nakamura, Kuniyasu; Koguchi, Masanari; Shichi, Hiroyasu; Umemura, Kaoru

2004-01-01

A new method to prepare micropillar specimens with a high aspect ratio that is suitable for three-dimensional scanning transmission electron microscopy (3D-STEM) was developed. The key features of the micropillar fabrication are: first, microsampling to extract a small piece including the structure of interest in an IC chip, and second, an ion-beam with an incident direction of 60 degrees to the pillar's axis that enables the parallel sidewalls of the pillar to be produced with a high aspect ratio. A memory-cell structure (length: 6 microm; width: 300 x 500 nm) was fabricated in the micropillar and observed from various directions with a 3D-STEM. A planiform capacitor covered with granular surfaces and a solid crossing gate and metal lines was successfully observed threedimensionally at a resolution of approximately 5 nm.

Lead zirconate titanate thin films directly on copper electrodes for ferroelectric, dielectric and piezoelectric applications

NASA Astrophysics Data System (ADS)

Kingon, Angus I.; Srinivasan, Sudarsan

2005-03-01

Replacement of noble metal electrodes by base metals significantly lowers the cost of ferroelectric, piezoelectric and dielectric devices. Here, we demonstrate that it is possible to process lead zirconate (Pb(Zr0.52Ti0.48)O3, or PZT) thin films directly on base metal copper foils. We explore the impact of the oxygen partial pressure during processing, and demonstrate that high-quality films and interfaces can be achieved through control of the oxygen partial pressure within a narrow window predicted by thermodynamic stability considerations. This demonstration has broad implications, opening up the possibility of the use of low-cost, high-conductivity copper electrodes for a range of Pb-based perovskite materials, including PZT films in embedded printed circuit board applications for capacitors, varactors and sensors; multilayer PZT piezoelectric stacks; and multilayer dielectric and electrostrictive devices based on lead magnesium niobate-lead titanate. We also point out that the capacitors do not fatigue on repeated switching, unlike those with Pt noble metal electrodes. Instead, they appear to be fatigue-resistant, like capacitors with oxide electrodes. This may have implications for ferroelectric non-volatile memories.

Circuit for Full Charging of Series Lithium-Ion Cells

NASA Technical Reports Server (NTRS)

Ott, William E.; Saunders, David L.

2007-01-01

An advanced charger has been proposed for a battery that comprises several lithium-ion cells in series. The proposal is directed toward charging the cells in as nearly an optimum manner as possible despite unit-to-unit differences among the nominally identical cells. The particular aspect of the charging problem that motivated the proposal can be summarized as follows: During bulk charging (charging all the cells in series at the same current), the voltages of individual cells increase at different rates. Once one of the cells reaches full charge, bulk charging must be stopped, leaving other cells less than fully charged. To make it possible to bring all cells up to full charge once bulk charging has been completed, the proposed charger would include a number of top-off chargers one for each cell. The top-off chargers would all be powered from the same DC source, but their outputs would be DC-isolated from each other and AC-coupled to their respective cells by means of transformers, as described below. Each top-off charger would include a flyback transformer, an electronic switch, and an output diode. For suppression of undesired electromagnetic emissions, each top-off charger would also include (1) a resistor and capacitor configured to act as a snubber and (2) an inductor and capacitor configured as a filter. The magnetic characteristics of the flyback transformer and the duration of its output pulses determine the energy delivered to the lithium-ion cell. It would be necessary to equip the cell with a precise voltage monitor to determine when the cell reaches full charge. In response to a full-charge reading by this voltage monitor, the electronic switch would be held in the off state. Other cells would continue to be charged similarly by their top-off chargers until their voltage monitors read full charge.

MgO-templated carbon as a negative electrode material for Na-ion capacitors

NASA Astrophysics Data System (ADS)

Kado, Yuya; Soneda, Yasushi

2016-12-01

In this study, MgO-templated carbon with different pore structures was investigated as a negative electrode material for Na-ion capacitors. With increasing the Brunauer-Emmett-Teller surface area, the irreversible capacity increased, and the coulombic efficiency of the 1st cycle decreased because of the formation of solid electrolyte interface layers. MgO-templated carbon annealed at 1000 °C exhibited the highest capacity and best rate performance, suggesting that an appropriate balance between surface area and crystallinity is imperative for fast Na-ion storage, attributed to the storage mechanism: combination of non-faradaic electric double-layer capacitance and faradaic Na intercalation in the carbon layers. Finally, a Na-ion capacitor cell using MgO-templated carbon and activated carbon as the negative and positive electrodes, respectively, exhibited an energy density at high power density significantly greater than that exhibited by the cell using a commercial hard carbon negative electrode.

Nonaqueous Electrical Storage Device

DOEpatents

McEwen, Alan B.; Evans, David A.; Blakley, Thomas J.; Goldman, Jay L.

1999-10-26

An electrochemical capacitor is disclosed that features two, separated, high surface area carbon cloth electrodes sandwiched between two current collectors fabricated of a conductive polymer having a flow temperature greater than 130.degree. C., the perimeter of the electrochemical capacitor being sealed with a high temperature gasket to form a single cell device. The gasket material is a thermoplastic stable at temperatures greater than 100.degree. C., preferably a polyester or a polyurethane, and having a reflow temperature above 130.degree. C. but below the softening temperature of the current collector material. The capacitor packaging has good mechanical integrity over a wide temperature range, contributes little to the device equivalent series resistance (ESR), and is stable at high potentials. In addition, the packaging is designed to be easily manufacturable by assembly line methods. The individual cells can be stacked in parallel or series configuration to reach the desired device voltage and capacitance.

Electrochemical components employing polysiloxane-derived binders

DOEpatents

Delnick, Frank M.

2013-06-11

A processed polysiloxane resin binder for use in electrochemical components and the method for fabricating components with the binder. The binder comprises processed polysiloxane resin that is partially oxidized and retains some of its methyl groups following partial oxidation. The binder is suitable for use in electrodes of various types, separators in electrochemical devices, primary lithium batteries, electrolytic capacitors, electrochemical capacitors, fuel cells and sensors.

Lithium and sodium ion capacitors with high energy and power densities based on carbons from recycled olive pits

NASA Astrophysics Data System (ADS)

Ajuria, Jon; Redondo, Edurne; Arnaiz, Maria; Mysyk, Roman; Rojo, Teófilo; Goikolea, Eider

2017-08-01

In this work, we are presenting both lithium and sodium ion capacitors (LIC and NIC) entirely based on electrodes designed from recycled olive pit bio-waste derived carbon materials. On the one hand, olive pits were pyrolized to obtain a low specific surface area semigraphitic hard carbon to be used as the ion intercalation (battery-type) negative electrode. On the other hand, the same hard carbon was chemically activated with KOH to obtain a high specific surface area activated carbon that was further used as the ion-adsorption (capacitor-type) positive electrode. Both electrodes were custom-made to be assembled in a hybrid cell to either build a LIC or NIC in the corresponding Li- and Na-based electrolytes. For comparison purposes, a symmetric EDLC supercapacitor cell using the same activated carbon in 1.5 M Et4NBF4/acetonitrile electrolyte was also built. Both LIC and NIC systems demonstrate remarkable energy and power density enhancement over its EDLC counterpart while showing good cycle life. This breakthrough offers the possibility to easily fabricate versatile hybrid ion capacitors, covering a wide variety of applications where different requirements are demanded.

High voltage AC/AC electrochemical capacitor operating at low temperature in salt aqueous electrolyte

NASA Astrophysics Data System (ADS)

Abbas, Qamar; Béguin, François

2016-06-01

We demonstrate that an activated carbon (AC)-based electrochemical capacitor implementing aqueous lithium sulfate electrolyte in 7:3 vol:vol water/methanol mixture can operate down to -40 °C with good electrochemical performance. Three-electrode cell investigations show that the faradaic contributions related with hydrogen chemisorption in the negative AC electrode are thermodynamically unfavored at -40 °C, enabling the system to work as a typical electrical double-layer (EDL) capacitor. After prolonged floating of the AC/AC capacitor at 1.6 V and -40°C, the capacitance, equivalent series resistance and efficiency remain constant, demonstrating the absence of ageing related with side redox reactions at this temperature. Interestingly, when temperature is increased back to 24 °C, the redox behavior due to hydrogen storage reappears and the system behaves as a freshly prepared one.

gp49B-mediated negative regulation of antibody production by memory and marginal zone B cells.

PubMed

Fukao, Saori; Haniuda, Kei; Nojima, Takuya; Takai, Toshiyuki; Kitamura, Daisuke

2014-07-15

The rapid Ab responses observed after primary and secondary immunizations are mainly derived from marginal zone (MZ) and memory B cells, respectively, but it is largely unknown how these responses are negatively regulated. Several inhibitory receptors have been identified and their roles have been studied, but mainly on follicular B cells and much less so on MZ B, and never on memory B cells. gp49B is an Ig superfamily member that contains two ITIMs in its cytoplasmic tail, and it has been shown to negatively regulate mast cell, macrophage, and NK cell responses. In this study, we demonstrate that gp49B is preferentially expressed on memory and MZ B cells. We show that gp49B(-/-) mice produce more IgM after a primary immunization and more IgM and IgG1 after a secondary immunization than gp49B(+/+) mice in T cell-dependent immune responses. Memory and MZ B cells from gp49B(-/-) mice also produce more Abs upon in vitro stimulation with CD40 than those from gp49B(+/+) mice. The in vitro IgM production by MZ B cells from gp49B(+/+), but not gp49B(-/-), mice is suppressed by interaction with a putative gp49B ligand, the integrin αvβ3 heterodimer. In addition, gp49B(-/-) mice exhibited exaggerated IgE production in the memory recall response. These results suggest that plasma cell development from memory and MZ B cells, as well as subsequent Ab production, are suppressed via gp49B. In memory B cells, this suppression also prevents excessive IgE production, thus curtailing allergic diseases. Copyright © 2014 by The American Association of Immunologists, Inc.

Homogeneous-oxide stack in IGZO thin-film transistors for multi-level-cell NAND memory application

NASA Astrophysics Data System (ADS)

Ji, Hao; Wei, Yehui; Zhang, Xinlei; Jiang, Ran

2017-11-01

A nonvolatile charge-trap-flash memory that is based on amorphous indium-gallium-zinc-oxide thin film transistors was fabricated with a homogeneous-oxide structure for a multi-level-cell application. All oxide layers, i.e., tunneling layer, charge trapping layer, and blocking layer, were fabricated with Al2O3 films. The fabrication condition (including temperature and deposition method) of the charge trapping layer was different from those of the other oxide layers. This device demonstrated a considerable large memory window of 4 V between the states fully erased and programmed with the operation voltage less than 14 V. This kind of device shows a good prospect for multi-level-cell memory applications.

Highly Oriented Graphene Sponge Electrode for Ultra High Energy Density Lithium Ion Hybrid Capacitors.

PubMed

Ahn, Wook; Lee, Dong Un; Li, Ge; Feng, Kun; Wang, Xiaolei; Yu, Aiping; Lui, Gregory; Chen, Zhongwei

2016-09-28

Highly oriented rGO sponge (HOG) can be easily synthesized as an effective anode for application in high-capacity lithium ion hybrid capacitors. X-ray diffraction and morphological analyses show that successfully exfoliated rGO sponge on average consists of 4.2 graphene sheets, maintaining its three-dimensional structure with highly oriented morphology even after the thermal reduction procedure. Lithium-ion hybrid capacitors (LIC) are fabricated in this study based on a unique cell configuration which completely eliminates the predoping process of lithium ions. The full-cell LIC consisting of AC/HOG-Li configuration has resulted in remarkably high energy densities of 231.7 and 131.9 Wh kg(-1) obtained at 57 W kg(-1) and 2.8 kW kg(-1). This excellent performance is attributed to the lithium ion diffusivity related to the intercalation reaction of AC/HOG-Li which is 3.6 times higher that of AC/CG-Li. This unique cell design and configuration of LIC presented in this study using HOG as an effective anode is an unprecedented example of performance enhancement and improved energy density of LIC through successful increase in cell operation voltage window.

Fabrication of high-performance supercapacitors based on transversely oriented carbon nanotubes

NASA Astrophysics Data System (ADS)

Markoulidis, F.; Lei, C.; Lekakou, C.

2013-04-01

High-performance supercapacitors with organic electrolyte 1 M TEABF4 (tetraethyl ammonium tetrafluoroborate) in PC (propylene carbonate) were fabricated and tested, based on multiwall carbon nanotubes (MWNTs) deposited by electrophoresis on three types of alternative substrates: aluminium foil, ITO (indium tin oxide) coated PET (polyethylene terephthalate) film and PET film. In all cases, SEM (scanning electron microscopy) and STEM (scanning transmission electron microscopy) micrographs demonstrated that protruding, transversely oriented MWNT structures were formed, which should increase the transverse conductivity of these MWNT electrodes. The best supercapacitor cell of MWNT electrodes deposited on aluminium foil displayed good transverse orientation of the MWNT structures as well as an in-plane MWNT network at the feet of the protruding structures, which ensured good in-plane conductivity. Capacitor cells with MWNT electrodes deposited either on ITO-coated PET film or on PET film demonstrated lower but still very good performance due to the high density of transversely oriented MWNT structures (good transverse conductivity) but some in-plane inhomogeneities. Capacitor cells with drop-printed MWNTs on aluminium foil, without any transverse orientation, had 16-30 times lower specific capacitance and 5-40 times lower power density than the capacitor cells with the electrophoretically deposited MWNT electrodes.

CD22 is required for formation of memory B cell precursors within germinal centers.

PubMed

Chappell, Craig P; Draves, Kevin E; Clark, Edward A

2017-01-01

CD22 is a BCR co-receptor that regulates B cell signaling, proliferation and survival and is required for T cell-independent Ab responses. To investigate the role of CD22 during T cell-dependent (TD) Ab responses and memory B cell formation, we analyzed Ag-specific B cell responses generated by wild-type (WT) or CD22-/- B cells following immunization with a TD Ag. CD22-/- B cells mounted normal early Ab responses yet failed to generate either memory B cells or long-lived plasma cells, whereas WT B cells formed both populations. Surprisingly, B cell expansion and germinal center (GC) differentiation were comparable between WT and CD22-/- B cells. CD22-/- B cells, however, were significantly less capable of generating a population of CXCR4hiCD38hi GC B cells, which we propose represent memory B cell precursors within GCs. These results demonstrate a novel role for CD22 during TD humoral responses evident during primary GC formation and underscore that CD22 functions not only during B cell maturation but also during responses to both TD and T cell-independent antigens.

CD22 is required for formation of memory B cell precursors within germinal centers

PubMed Central

Chappell, Craig P.; Draves, Kevin E.

2017-01-01

CD22 is a BCR co-receptor that regulates B cell signaling, proliferation and survival and is required for T cell-independent Ab responses. To investigate the role of CD22 during T cell-dependent (TD) Ab responses and memory B cell formation, we analyzed Ag-specific B cell responses generated by wild-type (WT) or CD22-/- B cells following immunization with a TD Ag. CD22-/- B cells mounted normal early Ab responses yet failed to generate either memory B cells or long-lived plasma cells, whereas WT B cells formed both populations. Surprisingly, B cell expansion and germinal center (GC) differentiation were comparable between WT and CD22-/- B cells. CD22-/- B cells, however, were significantly less capable of generating a population of CXCR4hiCD38hi GC B cells, which we propose represent memory B cell precursors within GCs. These results demonstrate a novel role for CD22 during TD humoral responses evident during primary GC formation and underscore that CD22 functions not only during B cell maturation but also during responses to both TD and T cell-independent antigens. PMID:28346517

Unravelling and controlling hidden imprint fields in ferroelectric capacitors

PubMed Central

Liu, Fanmao; Fina, Ignasi; Bertacco, Riccardo; Fontcuberta, Josep

2016-01-01

Ferroelectric materials have a spontaneous polarization that can point along energetically equivalent, opposite directions. However, when ferroelectric layers are sandwiched between different metallic electrodes, asymmetric electrostatic boundary conditions may induce the appearance of an electric field (imprint field, Eimp) that breaks the degeneracy of the polarization directions, favouring one of them. This has dramatic consequences on functionality of ferroelectric-based devices such as ferroelectric memories or photodetectors. Therefore, to cancel out the Eimp, ferroelectric components are commonly built using symmetric contact configuration. Indeed, in this symmetric contact configuration, when measurements are done under time-varying electric fields of relatively low frequency, an archetypical symmetric single-step switching process is observed, indicating Eimp ≈ 0. However, we report here on the discovery that when measurements are performed at high frequency, a well-defined double-step switching is observed, indicating the presence of Eimp. We argue that this frequency dependence originates from short-living head-to-head or tail-to-tail ferroelectric capacitors in the device. We demonstrate that we can modulate Eimp and the life-time of head-to-head or tail-to-tail polarization configurations by adjusting the polarization screening charges by suitable illumination. These findings are of relevance to understand the effects of internal electric fields on pivotal ferroelectric properties, such as memory retention and photoresponse. PMID:27122309

Fabrication of one-transistor-capacitor structure of nonvolatile TFT ferroelectric RAM devices using Ba(Zr0.1Ti0.9)O3 gated oxide film.

PubMed

Yang, Cheng-Fu; Chen, Kai-Huang; Chen, Ying-Chung; Chang, Ting-Chang

2007-09-01

In this study, the Ba(Zr0.1Ti0.9)O3 (BZ1T9) thin films have been well deposited on the Pt/Ti/SiO2/Si substrate. The optimum radio frequency (RF) deposition parameters are developed, and the BZ1T9 thin films deposition at the optimum parameters have the maximum capacitance and dielectric constant of 4.4 nF and 190. As the applied voltage is increased to 8 V, the remnant polarization and coercive field of BZ1T9 thin films are about 4.5 microC/cm2 and 80 kV/cm. The counterclockwise current hysteresis and memory window of n-channel thin-film transistor property are observed, and that can be used to indicate the switching of ferroelectric polarization of BZ1T9 thin films. One-transistor-capacitor (1TC) structure of BZ1T9 ferroelectric random access memory device using bottom-gate amorphous silicon thin-film transistor was desirable because of the smaller size and better sensitivity. The BZ1T9 ferroelectric RAM devices with channel width = 40 microm and channel length = 8 microm has been successfully fabricated and the ID-VG transfer characteristics also are investigated in this study.

Ultrathin and lightweight organic solar cells with high flexibility

PubMed Central

Kaltenbrunner, Martin; White, Matthew S.; Głowacki, Eric D.; Sekitani, Tsuyoshi; Someya, Takao; Sariciftci, Niyazi Serdar; Bauer, Siegfried

2012-01-01

Application-specific requirements for future lighting, displays and photovoltaics will include large-area, low-weight and mechanical resilience for dual-purpose uses such as electronic skin, textiles and surface conforming foils. Here we demonstrate polymer-based photovoltaic devices on plastic foil substrates less than 2 μm thick, with equal power conversion efficiency to their glass-based counterparts. They can reversibly withstand extreme mechanical deformation and have unprecedented solar cell-specific weight. Instead of a single bend, we form a random network of folds within the device area. The processing methods are standard, so the same weight and flexibility should be achievable in light emitting diodes, capacitors and transistors to fully realize ultrathin organic electronics. These ultrathin organic solar cells are over ten times thinner, lighter and more flexible than any other solar cell of any technology to date. PMID:22473014

Humoral Immune Reconstitution Kinetics after Allogeneic Hematopoietic Stem Cell Transplantation in Children: A Maturation Block of IgM Memory B Cells May Lead to Impaired Antibody Immune Reconstitution.

PubMed

Abdel-Azim, Hisham; Elshoury, Amro; Mahadeo, Kris M; Parkman, Robertson; Kapoor, Neena

2017-09-01

Although T cell immune reconstitution after allogeneic hematopoietic stem cell transplantation (allo-HSCT) has been well studied, long-term B cell immune reconstitution remains less characterized. We evaluated humoral immune reconstitution among 71 pediatric allo-HSCT recipients. Although tetanus toxoid antibody levels were normal at 1 year after allo-HSCT, antipolysaccharide carbohydrate antibodies remained persistently low for up to 5 years. While naive B cell counts normalized by 6 months, IgM memory B cell deficiency persisted for up to 2 years (P = .01); switched memory B cell deficiency normalized by 1 year after allo-HSCT. CD4 + T cell immune reconstitution correlated with that of switched memory B cells as early as 6 months after allo-HSCT (r = .55, P = .002) but did not correlate with IgM memory B cells at any time point after allo-HSCT. Taken together, this suggests that allo-HSCT recipients have impaired antibody immune reconstitution, mainly due to IgM memory B cell maturation block, compared with more prompt T cell-dependent switched memory cell immune reconstitution. We further explored other factors that might affect humoral immune reconstitution. The use of total body irradiation was associated with lower naive B cells counts at 6 months after HSCT (P = .04) and lower IgM (P = .008) and switched (P = .003) memory B cells up to 2 years. Allo-HSCT recipients with extensive chronic graft-versus-host disease had lower IgM memory B cell counts (P = .03) up to 2 years after allo-HSCT. The use of cord blood was associated with better naive (P = .01), IgM (P = .0005), and switched memory (P = .006) B cells immune reconstitution. These findings may inform future prophylaxis and treatment strategies regarding risk of overwhelming infection, graft-versus-host disease, and post-allogeneic HSCT revaccination. Copyright © 2017 The American Society for Blood and Marrow Transplantation. Published by Elsevier Inc. All rights reserved.

Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

2015-07-21

Nanowire-based ferroelectric-complementary metal-oxide-semiconductor (NW FeCMOS) nonvolatile memory devices were successfully fabricated by utilizing single n- and p-type Si nanowire ferroelectric-gate field effect transistors (NW FeFETs) as individual memory cells. In addition to having the advantages of single channel n- and p-type Si NW FeFET memory, Si NW FeCMOS memory devices exhibit a direct readout voltage and ultralow power consumption. The reading state power consumption of this device is less than 0.1 pW, which is more than 10(5) times lower than the ON-state power consumption of single-channel ferroelectric memory. This result implies that Si NW FeCMOS memory devices are well suited for use in non-volatile memory chips in modern portable electronic devices, especially where low power consumption is critical for energy conservation and long-term use.

Development of Advanced Materials for Electro-Ceramic Application Final Report CRADA No. TC-1331-96

DOE Office of Scientific and Technical Information (OSTI.GOV)

Caplan, M.; Olstad, R.; McMillan, L.

The goal of this project was to further develop and characterize the electrochemical methods originating in Russia for producing ultra high purity organometallic compounds utilized as precursors in the production of high quality electro-ceramic materials. Symetrix planned to use electro-ceramic materials with high dielectric constant for microelectronic memory circuit applications. General Atomics planned to use the barium titanate type ceramics with low loss tangent for producing a high power ferroelectric tuner used to match radio frequency power into their Dill-D fusion machine. Phase I of the project was scheduled to have a large number of organometallic (alkoxides) chemical samples producedmore » using various methods. These would be analyzed by LLNL, Soliton and Symetrix independently to determine the level of chemical impurities thus verifying each other's analysis. The goal was to demonstrate a cost-effective production method, which could be implemented in a large commercial facility to produce high purity organometallic compounds. In addition, various compositions of barium-strontium-titanate ceramics were to be produced and analyzed in order to develop an electroceramic capacitor material having the desired characteristics with respect to dielectric constant, loss tangent, temperature characteristics and non-linear behavior under applied voltage. Upon optimizing the barium titanate material, 50 capacitor preforms would be produced from this material demonstrating the ability to produce, in quantity, the pills ultimately required for the ferroelectric tuner (approx 2000-3000 ceramic pills).« less

T-Cell Tropism of Simian Varicella Virus during Primary Infection

PubMed Central

Ouwendijk, Werner J. D.; Mahalingam, Ravi; de Swart, Rik L.; Haagmans, Bart L.; van Amerongen, Geert; Getu, Sarah; Gilden, Don; Osterhaus, Albert D. M. E.; Verjans, Georges M. G. M.

2013-01-01

Varicella-zoster virus (VZV) causes varicella, establishes a life-long latent infection of ganglia and reactivates to cause herpes zoster. The cell types that transport VZV from the respiratory tract to skin and ganglia during primary infection are unknown. Clinical, pathological, virological and immunological features of simian varicella virus (SVV) infection of non-human primates parallel those of primary VZV infection in humans. To identify the host cell types involved in virus dissemination and pathology, we infected African green monkeys intratracheally with recombinant SVV expressing enhanced green fluorescent protein (SVV-EGFP) and with wild-type SVV (SVV-wt) as a control. The SVV-infected cell types and virus kinetics were determined by flow cytometry and immunohistochemistry, and virus culture and SVV-specific real-time PCR, respectively. All monkeys developed fever and skin rash. Except for pneumonitis, pathology produced by SVV-EGFP was less compared to SVV-wt. In lungs, SVV infected alveolar myeloid cells and T-cells. During viremia the virus preferentially infected memory T-cells, initially central memory T-cells and subsequently effector memory T-cells. In early non-vesicular stages of varicella, SVV was seen mainly in perivascular skin infiltrates composed of macrophages, dendritic cells, dendrocytes and memory T-cells, implicating hematogenous spread. In ganglia, SVV was found primarily in neurons and occasionally in memory T-cells adjacent to neurons. In conclusion, the data suggest the role of memory T-cells in disseminating SVV to its target organs during primary infection of its natural and immunocompetent host. PMID:23675304

E2A-positive gastric MALT lymphoma has weaker plasmacytoid infiltrates and stronger expression of the memory B-cell-associated miR-223: possible correlation with stage and treatment response.

PubMed

Liu, Ting-Yun; Chen, Shee-Uan; Kuo, Sung-Hsin; Cheng, Ann-Lii; Lin, Chung-Wu

2010-11-01

Extranodal marginal-zone lymphoma of mucosa-associated lymphoid tissue of the stomach (gastric MALT lymphoma) is derived from memory B cells of the marginal zone. Normal memory B cells do not express markers of germinal-center B cells, such as E2A (immunoglobulin enhancer-binding factor E12/E47), B-cell chronic lymphocytic leukemia/lymphoma 6 (BCL6), or activation-induced cytidine deaminase (AID). E2A is a transcription factor that induces somatic hypermutations and blocks plasma cell differentiation. In 50 stage-I(E)/II(E1) gastric MALT lymphomas, we confirmed that all cases were BCL6(-)/AID(-), but a subset (50%, 25/50) was E2A(+). As E2A(-) and E2A(+) gastric MALT lymphomas had similar numbers of somatic hypermutations without intraclonal variations, which implied an origin from memory B cells, the expression of E2A was best regarded as a marker of aberrant follicular differentiation. Although the status of somatic hypermutation was not affected by E2A, E2A(+) gastric MALT lymphoma showed less plasmacytoid infiltrates and higher expressions of miRNA-223, a microRNA associated with memory B cells. Clinically, E2A(+) gastric MALT lymphomas were more likely to spread to perigastric lymph nodes and were less responsive to Helicobacter eradication therapy than were E2A(-) gastric MALT lymphomas. Taken together, aberrant E2A expression is a diagnostic feature of a subtype of gastric MALT lymphoma with weaker plasmacytoid infiltrates and stronger miR-223 expression. A prospective study would be necessary to verify the association between E2A expression and a poor response to Helicobacter eradication therapy.

The Majority of HIV Type 1 DNA in Circulating CD4+ T Lymphocytes Is Present in Non-Gut-Homing Resting Memory CD4+ T Cells

PubMed Central

Xu, Yin; Bailey, Michelle; Seddiki, Nabila; Suzuki, Kazuo; Murray, John M.; Gao, Yuan; Yan, Celine; Cooper, David A.; Kelleher, Anthony D.; Koelsch, Kersten K.; Zaunders, John

2013-01-01

Abstract Memory CD4+ T lymphocytes in peripheral blood that express integrins α4ß7 preferentially recirculate through gut-associated lymphoid tissue (GALT), a proposed site of significant HIV-1 replication. Tregs and activated CD4+ T cells in GALT could also be particularly susceptible to infection. We therefore hypothesized that infection of these subsets of memory CD4+ T cells may contribute disproportionately to the HIV-1 reservoir. A cross-sectional study of CD4+ T cell subsets of memory CD45RO+ cells in peripheral blood mononuclear cells (PBMCs) was conducted using leukapheresis from eight subjects with untreated chronic HIV-1 infection. Real-time polymerase chain reaction (PCR) was used to quantify total and integrated HIV-1 DNA levels from memory CD4+ T cells sorted into integrin β7+ vs. β7−, CD25+CD127low Treg vs. CD127high, and activated CD38+ vs. CD38−. More than 80% of total HIV-1 DNA was found to reside in the integrin β7-negative non-gut-homing subset of CD45RO+ memory CD4+ T cells. Less than 10% was found in highly purified Tregs or CD38+ activated memory cells. Similarly, integrated HIV-1 DNA copies were found to be more abundant in resting non-gut-homing memory CD4+ T cells (76%) than in their activated counterparts (23%). Our investigations showed that the majority of both total and integrated HIV-1 DNA was found within non-gut-homing resting CD4+ T cells. PMID:23971972

Thin-film decoupling capacitors for multi-chip modules

NASA Astrophysics Data System (ADS)

Dimos, D.; Lockwood, S. J.; Schwartz, R. W.; Rogers, M. S.

Thin-film decoupling capacitors based on ferroelectric lead lanthanum zirconate titanate (PLZT) films are being developed for use in advanced packages, such as multi-chip modules. These thin-film decoupling capacitors are intended to replace multi-layer ceramic capacitors for certain applications, since they can be more fully integrated into the packaging architecture. The increased integration that can be achieved should lead to decreased package volume and improved high-speed performance, due to a decrease in interconnect inductance. PLZT films are fabricated by spin coating using metal carboxylate/alkoxide solutions. These films exhibit very high dielectric constants ((var epsilon) greater than or equal to 900), low dielectric losses (tan(delta) = 0.01), excellent insulation resistances (rho greater than 10(exp 13) (Omega)-cm at 125 C), and good breakdown field strengths (E(sub B) = 900 kV/cm). For integrated circuit applications, the PLZT dielectric is less than 1 micron thick, which results in a large capacitance/area (8-9 nF/sq mm). The thin-film geometry and processing conditions also make these capacitors suitable for direct incorporation onto integrated circuits and for packages that require embedded components.

Space Electrochemical Research and Technology

NASA Technical Reports Server (NTRS)

Wilson, Richard M. (Compiler)

1996-01-01

Individual papers presented at the conference address the following topics: development of a micro-fiber nickel electrode for nickel-hydrogen cell, high performance nickel electrodes for space power application, bending properties of nickel electrodes for nickel-hydrogen batteries, effect of KOH concentration and anions on the performance of a Ni-H2 battery positive plate, advanced dependent pressure vessel nickel hydrogen spacecraft cell and battery design, electrolyte management considerations in modern nickel hydrogen and nickel cadmium cell and battery design, a novel unitized regenerative proton exchange membrane fuel cell, fuel cell systems for first lunar outpost - reactant storage options, the TMI regenerable solid oxide fuel cell, engineering development program of a closed aluminum-oxygen semi-cell system for an unmanned underwater vehicle, SPE OBOGS on-board oxygen generating system, hermetically sealed aluminum electrolytic capacitor, sol-gel technology and advanced electrochemical energy storage materials, development of electrochemical supercapacitors for EMA applications, and high energy density electrolytic capacitor.

Model predictive direct power control for active power decoupled single-phase quasi- Z -source inverter

DOE PAGES

Liu, Yushan; Ge, Baoming; Abu-Rub, Haitham; ...

2016-06-14

In this study, the active power filter (APF) that consists of a half-bridge leg and an ac capacitor is integrated in the single-phase quasi-Z-source inverter (qZSI) in this paper to avoid the second harmonic power flowing into the dc side. The capacitor of APF buffers the second harmonic power of the load, and the ac capacitor allows highly pulsating ac voltage, so that the capacitances of both dc and ac sides can be small. A model predictive direct power control (DPC) is further proposed to achieve the purpose of this newtopology through predicting the capacitor voltage of APF at eachmore » sampling period and ensuring the APF power to track the second harmonic power of single-phase qZSI. Simulation and experimental results verify the model predictive DPC for the APF-integrated single-phase qZSI.« less

Limiting factors for carbon based chemical double layer capacitors

NASA Technical Reports Server (NTRS)

Rose, M. Frank; Johnson, C.; Owens, T.; Stevens, B.

1993-01-01

The Chemical Double Layer (CDL) capacitor improves energy storage density dramatically when compared with conventional electrolytic capacitors. When compared to batteries, the CDL Capacitor is much less energy dense; however, the power density is orders of magnitude better. As a result, CDL-battery combinations present an interesting pulse power system with many potential applications. Due to the nature of the CDL it is inherently a low voltage device. The applications of the CDL can be tailored to auxiliary energy and burst mode storages which require fast charge/discharge cycles. Typical of the applications envisioned are power system backup, directed energy weapons concepts, electric automobiles, and electric actuators. In this paper, we will discuss some of the general characteristics of carbon-based CDL technology describing the structure, performance parameters, and methods of construction. Further, analytical and experimental results which define the state of the art are presented and described in terms of impact on applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Divani, Nazila, E-mail: n-divani@birjand.ac.ir; Firoozabadi, Mohammad M.; Bayat, Esmail

Scintillators are almost used in any nuclear laboratory. These detectors combine of scintillation materials, PMT and a voltage divider. Voltage dividers are different in resistive ladder design. But the effect of decoupling capacitors and damping resistors haven’t discussed yet. In this paper at first a good equilibrium circuit designed for PMT, and it was used for investigating about capacitors and resistors in much manner. Results show that decoupling capacitors have great effect on PMT output pulses. In this research, it was tried to investigate the effect of Capacitor’s value and places on PMT voltage divider in Neutron-Gamma discrimination capability. Therefore,more » the voltage divider circuit for R329-02 Hamamatsu PMT was made and Zero Cross method used for neutron-gamma discrimination. The neutron source was a 20Ci Am-Be. Anode and Dynode pulses and discrimination spectrum were saved. The results showed that the pulse height and discrimination quality change with the value and setting of capacitors.« less

Model predictive direct power control for active power decoupled single-phase quasi- Z -source inverter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Yushan; Ge, Baoming; Abu-Rub, Haitham

In this study, the active power filter (APF) that consists of a half-bridge leg and an ac capacitor is integrated in the single-phase quasi-Z-source inverter (qZSI) in this paper to avoid the second harmonic power flowing into the dc side. The capacitor of APF buffers the second harmonic power of the load, and the ac capacitor allows highly pulsating ac voltage, so that the capacitances of both dc and ac sides can be small. A model predictive direct power control (DPC) is further proposed to achieve the purpose of this newtopology through predicting the capacitor voltage of APF at eachmore » sampling period and ensuring the APF power to track the second harmonic power of single-phase qZSI. Simulation and experimental results verify the model predictive DPC for the APF-integrated single-phase qZSI.« less

Homeostasis of naive and memory CD4+ T cells: IL-2 and IL-7 differentially regulate the balance between proliferation and Fas-mediated apoptosis.

PubMed

Jaleco, Sara; Swainson, Louise; Dardalhon, Valérie; Burjanadze, Maryam; Kinet, Sandrina; Taylor, Naomi

2003-07-01

Cytokines play a crucial role in the maintenance of polyclonal naive and memory T cell populations. It has previously been shown that ex vivo, the IL-7 cytokine induces the proliferation of naive recent thymic emigrants (RTE) isolated from umbilical cord blood but not mature adult-derived naive and memory human CD4(+) T cells. We find that the combination of IL-2 and IL-7 strongly promotes the proliferation of RTE, whereas adult CD4(+) T cells remain relatively unresponsive. Immunological activity is controlled by a balance between proliferation and apoptotic cell death. However, the relative contributions of IL-2 and IL-7 in regulating these processes in the absence of MHC/peptide signals are not known. Following exposure to either IL-2 or IL-7 alone, RTE, as well as mature naive and memory CD4(+) T cells, are rendered only minimally sensitive to Fas-mediated cell death. However, in the presence of the two cytokines, Fas engagement results in a high level of caspase-dependent apoptosis in both RTE as well as naive adult CD4(+) T cells. In contrast, equivalently treated memory CD4(+) T cells are significantly less sensitive to Fas-induced cell death. The increased susceptibility of RTE and naive CD4(+) T cells to Fas-induced apoptosis correlates with a significantly higher IL-2/IL-7-induced Fas expression on these T cell subsets than on memory CD4(+) T cells. Thus, IL-2 and IL-7 regulate homeostasis by modulating the equilibrium between proliferation and apoptotic cell death in RTE and mature naive and memory T cell subsets.

High Temperature DC Bus Capacitor Cost Reduction & Performance Improvements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yializis, Angelo; Taylor, Ralph S.

The goal of this DOE program is to develop high temperature, high energy density, lower cost DC- Link capacitors, for inverters used in electric drive vehicles. Most electric motors in Hybrid Electric Vehicles (“HEVs”), Plug-in Hybrid Vehicles (“PHVs”) and Electric Vehicles (“EVs”) are driven with variable AC voltage supplied by an inverter/converter power module that converts the DC battery voltage to three-phase AC voltage. A key component of the inverter circuit is the DC- Link capacitor used to minimize ripple current, voltage fluctuation, and transient suppression. The DC-Link capacitor is one of the largest, costliest, and most failure-prone components inmore » today’s electric drive invertersystems. The principal weakness of present day DC- Link capacitors is their reliance on a low temperature thermoplastic polypropylene (“PP”) film dielectric. PP is the dielectric of choice for inverter capacitor applications due to its high breakdown strength and low dissipation factor. Major limitations of metallized PP film capacitors include volumetric efficiency, performance under high thermal loads and cost. The latter is especially effectual at lower voltage applications (400V) where PP films with a thickness of about 2.5 m are required that are costly to process. Metallized PP capacitors also do not meet the traditional “under-the-hood” requirements for automotive electronics. The standard temperature requirement for most passive components in the automotive industry has been 125ºC and it is evolving to 140°C. The industry has addressed this problem by reducing the ambient temperature specification for PP capacitors from 125ºC to 105ºC, and also by placing the capacitors on a water-cooled bus bar to extend their life and reliably. The supply chain for the production of PP capacitors is, for the most part, horizontally integrated. It includes the producer of the PP film, the toll metallizer, that deposits a patterned aluminum conductor onto the PP film, and the capacitor producer that winds the metallized film, forms electrical connections, and packages the capacitor (some large capacitor OEMs also metallize their films). The horizontal nature of the supply chain is principally due to the very high capital costs required to integrate the film production process as well as the corresponding depreciation costs. The result is that hundreds of capacitor OEMs use the same base films and capacitor products vary mainly in the way they are wound, formed and packaged, with little or no ability to innovate. Sigma Technologies (“Sigma”) has developed a disruptive process for producing polymer dielectric capacitors that overcome the limitations of PP film capacitors. Metallized self-supported films are replaced with deposited polymer dielectrics, metallized in-line with the polymer deposition process. Highly cross linked, high temperature polymers are formed, that have a thickness as low as 0.1μm, a wide range of dielectric constants and breakdown strength higher than that of PP. The supply chain for producing such capacitors is reduced to a single step performed by the capacitor OEM, in which aluminum wire and a liquid monomer are introduced into a machine to create a large area bulk capacitor material. Polymer Multi-Layer (PML) capacitors are produced by depositing 1000s of dielectric and aluminum electrode on a rotating process drum, forming a nanolaminate “mother capacitor” material, that is segmented and processed into individual capacitor elements. The PML process combines the conventional stepsof a) polymer dielectric formation, b) electrode deposition, and c) winding the capacitor, into a single continuous process performed in a single machine. This allows for complete vertical integration of the capacitor production process, where the capacitor OEM has complete control the dielectric chemistry, the polymer thickness and the electrode metallization process. Sigma partnered with Delphi Automotive Systems (“Delphi”) and Oak Ridge National Labs (“ORNL”) to respond to a DOE Vehicle Technologies Office solicitation to develop a DC-Link capacitor with reduced cost, lower volume and superior thermal properties. The major objectives of the development program included: • Optimization of the polymer dielectric to meet an 140ºC operating environment • Improvements to Sigma’s PML capacitor pilot line to allow the production of sample quantities of DC-Link capacitors • Evaluation of the thermal properties of the PML capacitors • Development of a thermal model to predict capacitor performance under various operating conditions • Electrical and environmental evaluation of PML capacitors based on AEC Q200 standard • Development of a package for PML capacitors • Development of a business plan to transition the PML capacitor technology into production.« less

Silicon/copper dome-patterned electrodes for high-performance hybrid supercapacitors.

PubMed

Liu, Xuyan; Jung, Hun-Gi; Kim, Sang-Ok; Choi, Ho-Suk; Lee, Sangwha; Moon, Jun Hyuk; Lee, Joong Kee

2013-12-02

This study proposes a method for manufacturing high-performance electrode materials in which controlling the shape of the current collector and electrode material for a Li-ion capacitor (LIC). In particular, the proposed LIC manufacturing method maintains the high voltage of a cell by using a microdome-patterned electrode material, allowing for reversible reactions between the Li-ion and the active material for an extended period of time. As a result, the LICs exhibit initial capacities of approximately 42 F g⁻¹, even at 60 A g⁻¹. The LICs also exhibit good cycle performance up to approximately 15,000 cycles. In addition, these advancements allow for a considerably higher energy density than other existing capacitor systems. The energy density of the proposed LICs is approximately nine, two, and 1.5 times higher than those of the electrochemical double layer capacitor (EDLC), AC/LiMn₂O₄ hybrid capacitor, and intrinsic Si/AC LIC, respectively.

Silicon/copper dome-patterned electrodes for high-performance hybrid supercapacitors

NASA Astrophysics Data System (ADS)

Liu, Xuyan; Jung, Hun-Gi; Kim, Sang-Ok; Choi, Ho-Suk; Lee, Sangwha; Moon, Jun Hyuk; Lee, Joong Kee

2013-12-01

This study proposes a method for manufacturing high-performance electrode materials in which controlling the shape of the current collector and electrode material for a Li-ion capacitor (LIC). In particular, the proposed LIC manufacturing method maintains the high voltage of a cell by using a microdome-patterned electrode material, allowing for reversible reactions between the Li-ion and the active material for an extended period of time. As a result, the LICs exhibit initial capacities of approximately 42 F g-1, even at 60 A g-1. The LICs also exhibit good cycle performance up to approximately 15,000 cycles. In addition, these advancements allow for a considerably higher energy density than other existing capacitor systems. The energy density of the proposed LICs is approximately nine, two, and 1.5 times higher than those of the electrochemical double layer capacitor (EDLC), AC/LiMn2O4 hybrid capacitor, and intrinsic Si/AC LIC, respectively.

Multiphase soft switched DC/DC converter and active control technique for fuel cell ripple current elimination

DOEpatents

Lai, Jih-Sheng; Liu, Changrong; Ridenour, Amy

2009-04-14

DC/DC converter has a transformer having primary coils connected to an input side and secondary coils connected to an output side. Each primary coil connects a full-bridge circuit comprising two switches on two legs, the primary coil being connected between the switches on each leg, each full-bridge circuit being connected in parallel wherein each leg is disposed parallel to one another, and the secondary coils connected to a rectifying circuit. An outer loop control circuit that reduces ripple in a voltage reference has a first resistor connected in series with a second resistor connected in series with a first capacitor which are connected in parallel with a second capacitor. An inner loop control circuit that reduces ripple in a current reference has a third resistor connected in series with a fourth resistor connected in series with a third capacitor which are connected in parallel with a fourth capacitor.

Quasi-Linear Vacancy Dynamics Modeling and Circuit Analysis of the Bipolar Memristor

PubMed Central

Abraham, Isaac

2014-01-01

The quasi-linear transport equation is investigated for modeling the bipolar memory resistor. The solution accommodates vacancy and circuit level perspectives on memristance. For the first time in literature the component resistors that constitute the contemporary dual variable resistor circuit model are quantified using vacancy parameters and derived from a governing partial differential equation. The model describes known memristor dynamics even as it generates new insight about vacancy migration, bottlenecks to switching speed and elucidates subtle relationships between switching resistance range and device parameters. The model is shown to comply with Chua's generalized equations for the memristor. Independent experimental results are used throughout, to validate the insights obtained from the model. The paper concludes by implementing a memristor-capacitor filter and compares its performance to a reference resistor-capacitor filter to demonstrate that the model is usable for practical circuit analysis. PMID:25390634

Quasi-linear vacancy dynamics modeling and circuit analysis of the bipolar memristor.

PubMed

Abraham, Isaac

2014-01-01

The quasi-linear transport equation is investigated for modeling the bipolar memory resistor. The solution accommodates vacancy and circuit level perspectives on memristance. For the first time in literature the component resistors that constitute the contemporary dual variable resistor circuit model are quantified using vacancy parameters and derived from a governing partial differential equation. The model describes known memristor dynamics even as it generates new insight about vacancy migration, bottlenecks to switching speed and elucidates subtle relationships between switching resistance range and device parameters. The model is shown to comply with Chua's generalized equations for the memristor. Independent experimental results are used throughout, to validate the insights obtained from the model. The paper concludes by implementing a memristor-capacitor filter and compares its performance to a reference resistor-capacitor filter to demonstrate that the model is usable for practical circuit analysis.

A 10 bit 200 MS/s pipeline ADC using loading-balanced architecture in 0.18 μm CMOS

NASA Astrophysics Data System (ADS)

Wang, Linfeng; Meng, Qiao; Zhi, Hao; Li, Fei

2017-07-01

A new loading-balanced architecture for high speed and low power consumption pipeline analog-to-digital converter (ADC) is presented in this paper. The proposed ADC uses SHA-less, op-amp and capacitor-sharing technique, capacitor-scaling scheme to reduce the die area and power consumption. A new capacitor-sharing scheme was proposed to cancel the extra reset phase of the feedback capacitors. The non-standard inter-stage gain increases the feedback factor of the first stage and makes it equal to the second stage, by which, the load capacitor of op-amp shared by the first and second stages is balanced. As for the fourth stage, the capacitor and op-amp no longer scale down. From the system’s point of view, all load capacitors of the shared OTAs are balanced by employing a loading-balanced architecture. The die area and power consumption are optimized maximally. The ADC is implemented in a 0.18 μm 1P6M CMOS technology, and occupies a die area of 1.2 × 1.2 mm{}2. The measurement results show a 55.58 dB signal-to-noise-and-distortion ratio (SNDR) and 62.97 dB spurious-free dynamic range (SFDR) with a 25 MHz input operating at a 200 MS/s sampling rate. The proposed ADC consumes 115 mW at 200 MS/s from a 1.8 V supply.

On-Orbit Demonstration of a Lithium-Ion Capacitor and Thin-Film Multijunction Solar Cells

NASA Astrophysics Data System (ADS)

Kukita, Akio; Takahashi, Masato; Shimazaki, Kazunori; Kobayashi, Yuki; Sakai, Tomohiko; Toyota, Hiroyuki; Takahashi, Yu; Murashima, Mio; Uno, Masatoshi; Imaizumi, Mitsuru

2014-08-01

This paper describes an on-orbit demonstration of the Next-generation Small Satellite Instrument for Electric power systems (NESSIE) on which an aluminum- laminated lithium-ion capacitor (LIC) and a lightweight solar panel called KKM-PNL, which has space solar sheets using thin-film multijunction solar cells, were installed. The flight data examined in this paper covers a period of 143 days from launch. We verified the integrity of an LIC constructed using a simple and lightweight mounting method: no significant capacitance reduction was observed. We also confirmed that inverted metamorphic multijunction triple-junction thin-film solar cells used for evaluation were healthy at 143 days after launch, because their degradation almost matched the degradation predictions for dual-junction thin-film solar cells.

Models for Total-Dose Radiation Effects in Non-Volatile Memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Campbell, Philip Montgomery; Wix, Steven D.

The objective of this work is to develop models to predict radiation effects in non- volatile memory: flash memory and ferroelectric RAM. In flash memory experiments have found that the internal high-voltage generators (charge pumps) are the most sensitive to radiation damage. Models are presented for radiation effects in charge pumps that demonstrate the experimental results. Floating gate models are developed for the memory cell in two types of flash memory devices by Intel and Samsung. These models utilize Fowler-Nordheim tunneling and hot electron injection to charge and erase the floating gate. Erase times are calculated from the models andmore » compared with experimental results for different radiation doses. FRAM is less sensitive to radiation than flash memory, but measurements show that above 100 Krad FRAM suffers from a large increase in leakage current. A model for this effect is developed which compares closely with the measurements.« less

Full-wave receiver architecture for the homodyne motion sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haugen, Peter C.; Dallum, Gregory E.; Welsh, Patrick A.

A homodyne motion sensor or detector based on ultra-wideband radar utilizes the entire received waveform through implementation of a voltage boosting receiver. The receiver includes a receiver input and a receiver output. A first diode is connected to the receiver output. A first charge storage capacitor is connected from between the first diode and the receiver output to ground. A second charge storage capacitor is connected between the receiver input and the first diode. A second diode is connected from between the second charge storage capacitor and the first diode to ground. The dual diode receiver performs voltage boosting ofmore » a RF signal received at the receiver input, thereby enhancing receiver sensitivity.« less

Research into the feasibility of metal- and oxide-film capacitors

NASA Technical Reports Server (NTRS)

Jorgenson, G. V.; Larson, H. W.

1973-01-01

Thin film capacitors with up to twenty-two active layers have been deposited by RF sputtering. The materials were aluminum electrodes of 1200 to 1500 angstrom thickness and silica dielectric layers of 3000 to 6000 angstrom thickness. The best electrical characteristics were capacitances of nearly 0.1 microfarad for an active area of 1.25 square centimeters, dissipation factor of less than 0.01 over a frequency range of 0.5 to 100 kilohertz and energy density of approximately 70 millijoules per cubic centimeter of active deposited material at a working voltage of 40 volts. These aluminum-silica capacitors exhibit excellent electrical stability over a temperature range from -55 C to +300 C.

Printable Organic Nanoelectronics for Memory, Sensors and Display

DTIC Science & Technology

2014-02-01

central ion but associated with ring- based processes during oxidation and reduction. The electrochromic behaviour of the film was examined by cyclic...Fluorine-doped tin oxide 12  satDI Saturation current 9 scI Short circuit current 10 LiClO4 Lithium perchlorate 14 NADH reduced nicotinamide...resistor R and capacitor C , connected in parallel. The net current I is the sum of the circulating current and displacement components in the form

Differential influence of hippocampal subfields to memory formation: insights from patients with temporal lobe epilepsy.

PubMed

Coras, Roland; Pauli, Elisabeth; Li, Jinmei; Schwarz, Michael; Rössler, Karl; Buchfelder, Michael; Hamer, Hajo; Stefan, Hermann; Blumcke, Ingmar

2014-07-01

To clarify the anatomical organization of human memory remains a major challenge in clinical neuroscience. Experimental data suggest dentate gyrus granule cells play a major role in memory acquisition, i.e. pattern separation and rapid pattern completion, whereas hippocampal CA1 neurons are implicated in place memory and autobiographical memory retrieval. Patients with temporal lobe epilepsy present with a broad spectrum of memory impairment, which can be assessed during clinical examination. Although long seizure histories may contribute to a pathophysiological reorganization of functional connectivity, surgical resection of the epileptic hippocampus offers a unique possibility to anatomically study the differential contribution of hippocampal subfields to compromised learning and memory in humans. Herein, we tested the hypothesis of hippocampal subfield specialization in a series of 100 consecutive patients with temporal lobe epilepsy submitted to epilepsy surgery. Memory profiles were obtained from intracarotid amobarbital testing and non-invasive verbal memory assessment before surgery, and correlated with histopathologically quantified cell loss pattern in hippocampal subfields obtained from the same patients using the new international consensus classification for hippocampal sclerosis proposed by the International League against Epilepsy (HS ILAE). Interestingly, patients with CA1 predominant cell loss (HS ILAE Type 2; n = 13) did not show declarative memory impairment and were indistinguishable from patients without any hippocampal cell loss (n = 19). In contrast, 63 patients with neuronal loss affecting all hippocampal subfields including CA1, CA4 and dentate gyrus (HS ILAE Type 1), or predominant cell loss in CA4 and partially affecting also CA3 and dentate gyrus (HS ILAE Type 3, n = 5) showed significantly reduced declarative memory capacities (intracarotid amobarbital testing: P < 0.001; verbal memory: P < 0.05). Our results suggested an alternative model of how memory processing can be organized amongst hippocampal subfields, and that CA1 pyramidal cells are less critically involved in declarative human memory acquisition compared to dentate gyrus granule cells or CA4/CA3 pyramidal cells. © The Author (2014). Published by Oxford University Press on behalf of the Guarantors of Brain. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

A Quasi-Solid-State Sodium-Ion Capacitor with High Energy Density.

PubMed

Wang, Faxing; Wang, Xiaowei; Chang, Zheng; Wu, Xiongwei; Liu, Xiang; Fu, Lijun; Zhu, Yusong; Wu, Yuping; Huang, Wei

2015-11-18

A quasi-solid-state sodium-ion capacitor is demonstrated with nanoporous disordered carbon and macroporous graphene as the negative and positive electrodes, respectively, using a sodium-ion-conducting gel polymer electrolyte. It can operate at a cell voltage as high as 4.2 V with an energy density of record high 168 W h kg(-1). © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication and applications of copper sulfide (CuS) nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shamraiz, Umair, E-mail: umairshamraiz@gmail.com; Hussain, Raja Azadar, E-mail: hussainazadar@gamil.com; Badshah, Amin, E-mail: aminbadshah@yahoo.com

2016-06-15

This review article presents different fabrication procedures (under the headlines of solvothermal routes, aerosol methods, solution methods and thermolysis), and applications (photocatalytic degradation, ablation of cancer cells, electrode material in lithium ion batteries and in gas sensing, organic solar cells, field emission properties, super capacitor applications, photoelectrochemical performance of QDSCs, photocatalytic reduction of organic pollutants, electrochemical bio sensing, enhanced PEC characteristics of pre-annealed CuS film electrodes) of copper sulfide (Covellite). - Highlights: • This review article presents the synthesis and applications of copper sulfide. • CuS has been used over the years for different applications in nanoscience. • Different syntheticmore » protocols are followed for their preparation which help in the possible modifications in the morphology of CuS.« less

Nanomaterials for Polymer Electrolyte Membrane Fuel Cells; Materials Challenges Facing Electrical Energy Storate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gopal Rao, MRS Web-Editor; Yury Gogotsi, Drexel University; Karen Swider-Lyons, Naval Research Laboratory

Symposium T: Nanomaterials for Polymer Electrolyte Membrane Fuel Cells Polymer electrolyte membrane (PEM) fuel cells are under intense investigation worldwide for applications ranging from transportation to portable power. The purpose of this seminar is to focus on the nanomaterials and nanostructures inherent to polymer fuel cells. Symposium topics will range from high-activity cathode and anode catalysts, to theory and new analytical methods. Symposium U: Materials Challenges Facing Electrical Energy Storage Electricity, which can be generated in a variety of ways, offers a great potential for meeting future energy demands as a clean and efficient energy source. However, the use ofmore » electricity generated from renewable sources, such as wind or sunlight, requires efficient electrical energy storage. This symposium will cover the latest material developments for batteries, advanced capacitors, and related technologies, with a focus on new or emerging materials science challenges.« less

Ferroelectric properties of YMnO3 epitaxial films for ferroelectric-gate field-effect transistors

NASA Astrophysics Data System (ADS)

Ito, Daisuke; Fujimura, Norifumi; Yoshimura, Takeshi; Ito, Taichiro

2003-05-01

Ferroelectric properties of YMnO3 epitaxial films were studied. The ferroelectric properties of epitaxially grown (0001) YMnO3 films on (111)Pt/(0001)sapphire (epi-YMO/Pt) with an excellent crystallinity were compared to (0001)-oriented poly crystalline films on (111)Pt/ZrO2/SiO2/Si. The epi-YMO/Pt had saturated polarization-electric-field (P-E) hysteresis loops, with a remanent polarization (Pr) of 1.7 μC/cm2 and a coercive field (Ec) of 80 kV/cm. The fatigue property showed no degradation up to 1010 measured cycles. These results suggested that the YMnO3 epitaxial films were suitable ferroelectric material for the ferroelectric-gate field-effect transistors. Consequently, epitaxially grown (0001)YMnO3 films on epitaxial Y2O3/Si (epi-YMO/Si) were fabricated. The epi-YMO/Si capacitor had almost equivalent crystallinity compared to epi-YMO/Pt. It was recognized that the epi-YMO/Si capacitor exhibited the ferroelectric type C-V hysteresis loop with the width of the memory window of 4.8 V, which was almost identical to the value of twice coercive voltage of the P-E hysteresis loops of the epi-YMO/Pt. A retention time exceeding 104 s was obtained in the epi-YMO/Si capacitor.

Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures

PubMed Central

Yan, Z. B.; Liu, J. -M.

2013-01-01

The Au/DyMnO3/Nb:SrTiO3/Au stack was demonstrated to be not only a high performance memristor but also a good memcapacitor. The switching time is below 10 ns, the retention is longer than 105 s, and the change ratio of resistance (or capacitance) is larger than 100 over the 108 switching cycles. Moreover, this stack has a broad range of intermediate states that are tunable by the operating voltages. It is indicated that the memory effects originate from the Nb:SrTiO3/Au junction where the barrier profile is electrically modulated. The serial connected Au/DyMnO3/Nb:SrTiO3 stack behaves as a high nonlinear resistor paralleling with a capacitor, which raises the capacitance change ratio and enhances the memory stability of the device. PMID:23963467

Abacavir-Reactive Memory T Cells Are Present in Drug Naïve Individuals

PubMed Central

Lucas, Andrew; Lucas, Michaela; Strhyn, Anette; Keane, Niamh M.; McKinnon, Elizabeth; Pavlos, Rebecca; Moran, Ellen M.; Meyer-Pannwitt, Viola; Gaudieri, Silvana; D’Orsogna, Lloyd; Kalams, Spyros; Ostrov, David A.; Buus, Søren; Peters, Bjoern; Mallal, Simon; Phillips, Elizabeth

2015-01-01

Background Fifty-five percent of individuals with HLA-B*57:01 exposed to the antiretroviral drug abacavir develop a hypersensitivity reaction (HSR) that has been attributed to naïve T-cell responses to neo-antigen generated by the drug. Immunologically confirmed abacavir HSR can manifest clinically in less than 48 hours following first exposure suggesting that, at least in some cases, abacavir HSR is due to re-stimulation of a pre-existing memory T-cell population rather than priming of a high frequency naïve T-cell population. Methods To determine whether a pre-existing abacavir reactive memory T-cell population contributes to early abacavir HSR symptoms, we studied the abacavir specific naïve or memory T-cell response using HLA-B*57:01 positive HSR patients or healthy controls using ELISpot assay, intra-cellular cytokine staining and tetramer labelling. Results Abacavir reactive CD8+ T-cell responses were detected in vitro in one hundred percent of abacavir unexposed HLA-B*57:01 positive healthy donors. Abacavir-specific CD8+ T cells from such donors can be expanded from sorted memory, and sorted naïve, CD8+ T cells without need for autologous CD4+ T cells. Conclusions We propose that these pre-existing abacavir-reactive memory CD8+ T-cell responses must have been primed by earlier exposure to another foreign antigen and that these T cells cross-react with an abacavir-HLA-B*57:01-endogenous peptide ligand complex, in keeping with the model of heterologous immunity proposed in transplant rejection. PMID:25674793

Abacavir-reactive memory T cells are present in drug naïve individuals.

PubMed

Lucas, Andrew; Lucas, Michaela; Strhyn, Anette; Keane, Niamh M; McKinnon, Elizabeth; Pavlos, Rebecca; Moran, Ellen M; Meyer-Pannwitt, Viola; Gaudieri, Silvana; D'Orsogna, Lloyd; Kalams, Spyros; Ostrov, David A; Buus, Søren; Peters, Bjoern; Mallal, Simon; Phillips, Elizabeth

2015-01-01

Fifty-five percent of individuals with HLA-B*57:01 exposed to the antiretroviral drug abacavir develop a hypersensitivity reaction (HSR) that has been attributed to naïve T-cell responses to neo-antigen generated by the drug. Immunologically confirmed abacavir HSR can manifest clinically in less than 48 hours following first exposure suggesting that, at least in some cases, abacavir HSR is due to re-stimulation of a pre-existing memory T-cell population rather than priming of a high frequency naïve T-cell population. To determine whether a pre-existing abacavir reactive memory T-cell population contributes to early abacavir HSR symptoms, we studied the abacavir specific naïve or memory T-cell response using HLA-B*57:01 positive HSR patients or healthy controls using ELISpot assay, intra-cellular cytokine staining and tetramer labelling. Abacavir reactive CD8+ T-cell responses were detected in vitro in one hundred percent of abacavir unexposed HLA-B*57:01 positive healthy donors. Abacavir-specific CD8+ T cells from such donors can be expanded from sorted memory, and sorted naïve, CD8+ T cells without need for autologous CD4+ T cells. We propose that these pre-existing abacavir-reactive memory CD8+ T-cell responses must have been primed by earlier exposure to another foreign antigen and that these T cells cross-react with an abacavir-HLA-B*57:01-endogenous peptide ligand complex, in keeping with the model of heterologous immunity proposed in transplant rejection.

Temporal dynamics of the primary human T cell response to yellow fever virus 17D as it matures from an effector- to a memory-type response.

PubMed

Blom, Kim; Braun, Monika; Ivarsson, Martin A; Gonzalez, Veronica D; Falconer, Karolin; Moll, Markus; Ljunggren, Hans-Gustaf; Michaëlsson, Jakob; Sandberg, Johan K

2013-03-01

The live attenuated yellow fever virus (YFV) 17D vaccine provides a good model to study immune responses to an acute viral infection in humans. We studied the temporal dynamics, composition, and character of the primary human T cell response to YFV. The acute YFV-specific effector CD8 T cell response was broad and complex; it was composed of dominant responses that persisted into the memory population, as well as of transient subdominant responses that were not detected at the memory stage. Furthermore, HLA-A2- and HLA-B7-restricted YFV epitope-specific effector cells predominantly displayed a CD45RA(-)CCR7(-)PD-1(+)CD27(high) phenotype, which transitioned into a CD45RA(+)CCR7(-)PD-1(-)CD27(low) memory population phenotype. The functional profile of the YFV-specific CD8 T cell response changed in composition as it matured from an effector- to a memory-type response, and it tended to become less polyfunctional during the course of this transition. Interestingly, activation of CD4 T cells, as well as FOXP3(+) T regulatory cells, in response to YFV vaccination preceded the kinetics of the CD8 T cell response. The present results contribute to our understanding of how immunodominance patterns develop, as well as the phenotypic and functional characteristics of the primary human T cell response to a viral infection as it evolves and matures into memory.

IL-15 signaling promotes adoptive effector T-cell survival and memory formation in irradiation-induced lymphopenia.

PubMed

Xu, Aizhang; Bhanumathy, Kalpana Kalyanasundaram; Wu, Jie; Ye, Zhenmin; Freywald, Andrew; Leary, Scot C; Li, Rongxiu; Xiang, Jim

2016-01-01

Lymphopenia promotes naïve T-cell homeostatic proliferation and adoptive effector T-cell survival and memory formation. IL-7 plays a critical role in homeostatic proliferation, survival and memory formation of naïve T-cells in lymphopenia, and its underlying molecular mechanism has also been well studied. However, the mechanism for adoptively transferred effector T-cell survival and memory formation is not fully understood. Here, we transferred in vitro-activated transgenic OT-I CD8(+) effector T-cells into irradiation (600 rads)-induced lymphopenic C57BL/6, IL-7 knockout (KO) and IL-15 KO mice, and investigated the survival and memory formation of transferred T-cells in lymphopenia. We demonstrate that transferred T-cells prolong their survival and enhance their memory in lymphopenic mice, in a manner that depends on IL-15 signaling, but not IL-7. We determine that in vitro stimulation of naïve or effector T-cells with IL-7 and IL-15 reduces IL-7Rα, and increases and/or maintains IL-15Rβ expression, respectively. Consistent with these findings, the expression of IL-7Rα and IL-15Rβ is down- and up-regulated, respectively, in vivo on transferred T-cells in an early phase post T-cell transfer in lymphopenia. We further show that in vitro IL-15 restimulation-induced memory T-cells (compared to IL-2 restimulation-induced effector T-cells) and in vivo transferred T-cells in irradiated IL-15-sufficient C57BL/6 mice (compared to IL-15-deficient IL-15 KO mice) have increased mitochondrial content, but less NADH and lower mitochondrial potential (ΔΨm), and demonstrate greater phosphorylation of signal transducers and activators of transcription-5 (STAT5) and Unc-51-like kinase-1 (ULK1), and higher expression of B-cell leukemia/lymphoma-2 (Bcl2) and memory-, autophagy- and mitochondrial biogenesis-related molecules. Irradiation-induced lymphopenia promotes effector T-cell survival via IL-15 signaling the STAT5/Bcl2 pathway, enhances T-cell memory formation via IL-15 activation of the forkhead-box family of transcription factor (FOXO)/eomesodermin (Eomes) memory and ULK1/autophagy-related gene-7 (ATG7) autophagy pathways, and via IL-15 activation of the mitochondrial remodeling. Our data thus identify some important targets to consider when designing potent adoptive T-cell immunotherapies of cancer.

Memory as Perception of the Past: Compressed Time inMind and Brain.

PubMed

Howard, Marc W

2018-02-01

In the visual system retinal space is compressed such that acuity decreases further from the fovea. Different forms of memory may rely on a compressed representation of time, manifested as decreased accuracy for events that happened further in the past. Neurophysiologically, "time cells" show receptive fields in time. Analogous to the compression of visual space, time cells show less acuity for events further in the past. Behavioral evidence suggests memory can be accessed by scanning a compressed temporal representation, analogous to visual search. This suggests a common computational language for visual attention and memory retrieval. In this view, time functions like a scaffolding that organizes memories in much the same way that retinal space functions like a scaffolding for visual perception. Copyright © 2017 Elsevier Ltd. All rights reserved.

Superconductivity for Electromagnetic Guns

DTIC Science & Technology

1984-03-01

greater than that for a pulsed homopolar machine when the time constant is less than 0.1 sec (ref 32) (See fig. 18). Since the energy density in a...transferred from the capacitor to the induct- or. If the capacitor is replaced by a homopolar machine, then, as is well-known, the kinetic energy of the...rotor plays the role of an "electrical" capacitance and the two arrangements (capacitance and homopolar ) are functionally equivalent. Group 3. In

A Compact Operational Amplifier with Load-Insensitive Stability Compensation for High-Precision Transducer Interface.

PubMed

Yu, Zhanghao; Yang, Xi; Chung, SungWon

2018-01-29

High-resolution electronic interface circuits for transducers with nonlinear capacitive impedance need an operational amplifier, which is stable for a wide range of load capacitance. Such operational amplifier in a conventional design requires a large area for compensation capacitors, increasing costs and limiting applications. In order to address this problem, we present a gain-boosted two-stage operational amplifier, whose frequency response compensation capacitor size is insensitive to the load capacitance and also orders of magnitude smaller compared to the conventional Miller-compensation capacitor that often dominates chip area. By exploiting pole-zero cancellation between a gain-boosting stage and the main amplifier stage, the compensation capacitor of the proposed operational amplifier becomes less dependent of load capacitance, so that it can also operate with a wide range of load capacitance. A prototype operational amplifier designed in 0.13-μm complementary metal-oxide-semiconductor (CMOS) with a 400-fF compensation capacitor occupies 900- μ m 2 chip area and achieves 0.022-2.78-MHz unity gain bandwidth and over 65 ∘ phase margin with a load capacitance of 0.1-15 nF. The prototype amplifier consumes 7.6 μ W from a single 1.0-V supply. For a given compensation capacitor size and a chip area, the prototype design demonstrates the best reported performance trade-off on unity gain bandwidth, maximum stable load capacitance, and power consumption.

Graphene oxide-MnO2 nanocomposite for supercapacitor application

NASA Astrophysics Data System (ADS)

Muhammed Shafi, P.; Vishal, Jose K.; Chandra Bose, A.

2016-09-01

Increased depletion of fossil fuels along with global warming and climate change made the society to think about alternate green and sustainable energy sources and better energy storage devices. Extensive research has been performed on the development of solar cells, fuel cells, Lithium- ion battery and supercapacitors to combat the green house effect and its consequences, and to meet the increased energy crisis. Supercapacitors, also known as electrochemical capacitors are gained a great attention because of their pulse power supply, long cycle life (>100,000), simple principle and high dynamic of charge propagation. Its greater power density than lithium- ion battery and much larger energy density than conventional capacitors brought super capacitors to a promising energy storage device to meet the increased energy demands. Here we demonstrate supercapacitor electrode materials with graphene oxide (electric double layer capacitor) and α-MnO2 nanomaterial (pseudo-capacitor), as well as composite of these materials, which means that the bulk of the material undergoes a fast redox reaction to provide the capacitive response and they exhibit superior specific energies in addition to the carbon-based supercapacitors (double-layer capacitors). A simple soft chemical route is utilized to synthesize graphene oxide, α-MnO2 and graphene oxide-MnO2 composite. The phase and the structure of the synthesized materials are studied using X-ray diffractometry (XRD). The functional group and the presence of impurities are understood from Fourier transform infrared (FTIR) spectra. The capacitive properties of the graphene oxide, graphene oxide - MnO2 nanocomposite and α-MnO2 are tested with the help of cyclic voltammetry (CV) and galvanostatic charge - discharge techniques using 1 M Na2SO4 in aqueous solution as electrolyte. It was found that graphene oxide - MnO2 nanocomposite shows better electrochemical behaviour compared to individual graphene oxide and α-MnO2 nanomaterial.

Three levels of neuroelectronic interfacing: silicon chips with ion channels, nerve cells, and brain tissue.

PubMed

Fromherz, Peter

2006-12-01

We consider the direct electrical interfacing of semiconductor chips with individual nerve cells and brain tissue. At first, the structure of the cell-chip contact is studied. Then we characterize the electrical coupling of ion channels--the electrical elements of nerve cells--with transistors and capacitors in silicon chips. On that basis it is possible to implement signal transmission between microelectronics and the microionics of nerve cells in both directions. Simple hybrid neuroelectronic systems are assembled with neuron pairs and with small neuronal networks. Finally, the interfacing with capacitors and transistors is extended to brain tissue cultured on silicon chips. The application of highly integrated silicon chips allows an imaging of neuronal activity with high spatiotemporal resolution. The goal of the work is an integration of neuronal network dynamics with digital electronics on a microscopic level with respect to experiments in brain research, medical prosthetics, and information technology.

Delocalized periodic vibrations in nonlinear LC and LCR electrical chains

NASA Astrophysics Data System (ADS)

Chechin, G. M.; Shcherbinin, S. A.

2015-05-01

We consider electrical LC- and LCR-chains consisting of N cells. In the LC-chain each cell contains a linear inductor L and a nonlinear capacitor C, while the cell in the LCR-chain include additionally a resistor R and an voltage source. It is assumed that voltage dependence of capacitors represents an even function. Such capacitors have implemented by some experimental groups studying propagation of electrical signals in the lines constructed on MOS and CMOS substrates. In these chains, we study dynamical regimes representing nonlinear normal modes (NNMs) by Rosenberg. We prove that maximum possible number of symmetry-determined NNMs which can be excited in the considered chains is equal to 5. The stability of these modes for different N is studied with the aid of the group-theoretical method [Physical Review E 73 (2006) 36216] which allows to simplify radically the variational systems appearing in the Floquet stability analysis. For NNMs in LC-chain, the scaling of the voltage stability threshold in the thermodynamic limit (N → ∞) is determined. It is shown that the above group theoretical method can be also used for studying stability of NNMs in the LCR-chains.

Hybrid lithium-ion capacitor with LiFePO4/AC composite cathode - Long term cycle life study, rate effect and charge sharing analysis

NASA Astrophysics Data System (ADS)

Shellikeri, A.; Yturriaga, S.; Zheng, J. S.; Cao, W.; Hagen, M.; Read, J. A.; Jow, T. R.; Zheng, J. P.

2018-07-01

Energy storage devices, which can combine the advantages of lithium-ion battery with that of electric double layer capacitor, are of prime interest. Recently, composite cathodes, which combine a battery material with capacitor material, have shown promise in enhancing life cycle and energy/power performances. Lithium-ion capacitor (LIC), with unique charge storage mechanism of combining a pre-lithiated battery anode with a capacitor cathode, is one such device which has the potential to synergistically incorporate the composite cathode to enhance capacity and cycle life. We report here a hybrid LIC consisting of a lithium iron phosphate (LiFePO4-LFP)/Activated Carbon composite cathode in combination with a hard carbon anode, by integrating the cycle life and capacity enhancing strategies of a dry method of electrode fabrication, anode pre-lithiation and a 3:1 anode to cathode capacity ratio, demonstrating a long cycle life, while elaborating on the charge sharing between the faradaic and non-faradaic mechanism in the battery and capacitor materials, respectively in the composite cathode. An excellent cell capacity retention of 94% (1000 cycles at 1C) and 92% (100,000 cycles at 60C) were demonstrated, while retaining 78% (over 6000 cycles at 2.7C) and 67% (over 70,000 cycles at 43C) of the LFP capacity in the composite cathode.

Scalable integration of Li5FeO4 towards robust, high-performance lithium-ion hybrid capacitors.

PubMed

Park, Min-Sik; Lim, Young-Geun; Hwang, Soo Min; Kim, Jung Ho; Kim, Jeom-Soo; Dou, Shi Xue; Cho, Jaephil; Kim, Young-Jun

2014-11-01

Lithium-ion hybrid capacitors have attracted great interest due to their high specific energy relative to conventional electrical double-layer capacitors. Nevertheless, the safety issue still remains a drawback for lithium-ion capacitors in practical operational environments because of the use of metallic lithium. Herein, single-phase Li5FeO4 with an antifluorite structure that acts as an alternative lithium source (instead of metallic lithium) is employed and its potential use for lithium-ion capacitors is verified. Abundant Li(+) amounts can be extracted from Li5FeO4 incorporated in the positive electrode and efficiently doped into the negative electrode during the first electrochemical charging. After the first Li(+) extraction, Li(+) does not return to the Li5FeO4 host structure and is steadily involved in the electrochemical reactions of the negative electrode during subsequent cycling. Various electrochemical and structural analyses support its superior characteristics for use as a promising lithium source. This versatile approach can yield a sufficient Li(+)-doping efficiency of >90% and improved safety as a result of the removal of metallic lithium from the cell. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A new self-regulated self-excited single-phase induction generator using a squirrel cage three-phase induction machine

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fukami, Tadashi; Imamura, Michinori; Kaburaki, Yuichi

1995-12-31

A new single-phase capacitor self-excited induction generator with self-regulating feature is presented. The new generator consists of a squirrel cage three-phase induction machine and three capacitors connected in series and parallel with a single phase load. The voltage regulation of this generator is very small due to the effect of the three capacitors. Moreover, since a Y-connected stator winding is employed, the waveform of the output voltage becomes sinusoidal. In this paper the system configuration and the operating principle of the new generator are explained, and the basic characteristics are also investigated by means of a simple analysis and experimentsmore » with a laboratory machine.« less

Multi-layered epigenetic mechanisms contribute to transcriptional memory in T lymphocytes.

PubMed

Dunn, Jennifer; McCuaig, Robert; Tu, Wen Juan; Hardy, Kristine; Rao, Sudha

2015-05-06

Immunological memory is the ability of the immune system to respond more rapidly and effectively to previously encountered pathogens, a key feature of adaptive immunity. The capacity of memory T cells to "remember" previous cellular responses to specific antigens ultimately resides in their unique patterns of gene expression. Following re-exposure to an antigen, previously activated genes are transcribed more rapidly and robustly in memory T cells compared to their naïve counterparts. The ability for cells to remember past transcriptional responses is termed "adaptive transcriptional memory". Recent global epigenome studies suggest that epigenetic mechanisms are central to establishing and maintaining transcriptional memory, with elegant studies in model organisms providing tantalizing insights into the epigenetic programs that contribute to adaptive immunity. These epigenetic mechanisms are diverse, and include not only classical acetylation and methylation events, but also exciting and less well-known mechanisms involving histone structure, upstream signalling pathways, and nuclear localisation of genomic regions. Current global health challenges in areas such as tuberculosis and influenza demand not only more effective and safer vaccines, but also vaccines for a wider range of health priorities, including HIV, cancer, and emerging pathogens such as Ebola. Understanding the multi-layered epigenetic mechanisms that underpin the rapid recall responses of memory T cells following reactivation is a critical component of this development pathway.

IFN-Gamma-Dependent and Independent Mechanisms of CD4⁺ Memory T Cell-Mediated Protection from Listeria Infection.

PubMed

Meek, Stephanie M; Williams, Matthew A

2018-02-13

While CD8⁺ memory T cells can promote long-lived protection from secondary exposure to intracellular pathogens, less is known regarding the direct protective mechanisms of CD4⁺ T cells. We utilized a prime/boost model in which mice are initially exposed to an acutely infecting strain of lymphocytic choriomeningitis virus (LCMV), followed by a heterologous rechallenge with Listeria monocytogenes recombinantly expressing the MHC Class II-restricted LCMV epitope, GP 61-80 (Lm-gp61). We found that heterologous Lm-gp61 rechallenge resulted in robust activation of CD4⁺ memory T cells and that they were required for rapid bacterial clearance. We further assessed the relative roles of TNF and IFNγ in the direct anti-bacterial function of CD4⁺ memory T cells. We found that disruption of TNF resulted in a complete loss of protection mediated by CD4⁺ memory T cells, whereas disruption of IFNγ signaling to macrophages results in only a partial loss of protection. The protective effect mediated by CD4⁺ T cells corresponded to the rapid accumulation of pro-inflammatory macrophages in the spleen and an altered inflammatory environment in vivo. Overall, we conclude that protection mediated by CD4⁺ memory T cells from heterologous Listeria challenge is most directly dependent on TNF, whereas IFNγ only plays a minor role.

Method and apparatus for managing access to a memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

DeBenedictis, Erik

A method and apparatus for managing access to a memory of a computing system. A controller transforms a plurality of operations that represent a computing job into an operational memory layout that reduces a size of a selected portion of the memory that needs to be accessed to perform the computing job. The controller stores the operational memory layout in a plurality of memory cells within the selected portion of the memory. The controller controls a sequence by which a processor in the computing system accesses the memory to perform the computing job using the operational memory layout. The operationalmore » memory layout reduces an amount of energy consumed by the processor to perform the computing job.« less

Fabrication of PVDF-TrFE based bilayered PbTiO{sub 3}/PVDF-TrFE films capacitor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nurbaya, Z., E-mail: nurbayazainal@gmail.com; Razak School of Engineering and Advanced Technology, Universiti Teknologi Malaysia, 54100 Kuala Lumpur; Wahid, M. H.

2016-07-06

Development of high performance capacitor is reaching towards new generation where the ferroelectric materials take places as the active dielectric layer. The motivation of this study is to produce high capacitance device with long life cycle. This was configured by preparing bilayered films where lead titanate as an active dielectric layer and stacked with the top dielectric layer, poly(vinyledenefluoride-trifluoroethylene). Both of them are being referred that have one in common which is ferroelectric behavior. Therefore the combination of ceramic and polymer ferroelectric material could perform optimum dielectric characteristic for capacitor applications. The fabrication was done by simple sol-gel spin coatingmore » method that being varied at spinning speed property for polymer layers, whereas maintaining the ceramic layer. The characterization of PVDF-TrFE/PbTiO3 was performed according to metal-insulator-metal stacked capacitor measurement which includes structural, dielectric, and ferroelectric measurement.« less

Position sensor for a fuel injection element in an internal combustion engine

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fulkerson, D.E.; Geske, M.L.

1987-08-18

This patent describes an electronic circuit for dynamically sensing and processing signals representative of changes in a magnet field, the circuit comprising: means for sensing a change in a magnetic field external to the circuit and providing an output representative of the change; circuit means electronically coupled with the output of the sensing means for providing an output indicating the presence of the magnetic field change; and a nulling circuit coupled with the output of the sensing means and across the indicating circuit means for nulling the electronic circuit responsive to the sensing means output, to thereby avoid ambient magneticmore » fields temperature and process variations, and wherein the nulling circuit comprises a capacitor coupled to the output of the nulling circuit, means for charging and discharging the capacitor responsive to any imbalance in the input to the nulling circuit, and circuit means coupling the capacitor with the output of the sensing means for nulling any imbalance during the charging or discharging of the capacitor.« less

Neutral beam and ICP etching of HKMG MOS capacitors: Observations and a plasma-induced damage model

NASA Astrophysics Data System (ADS)

Kuo, Tai-Chen; Shih, Tzu-Lang; Su, Yin-Hsien; Lee, Wen-Hsi; Current, Michael Ira; Samukawa, Seiji

2018-04-01

In this study, TiN/HfO2/Si metal-oxide-semiconductor (MOS) capacitors were etched by a neutral beam etching technique under two contrasting conditions. The configurations of neutral beam etching technique were specially designed to demonstrate a "damage-free" condition or to approximate "reactive-ion-etching-like" conditions to verify the effect of plasma-induced damage on electrical characteristics of MOS capacitors. The results show that by neutral beam etching (NBE), the interface state density (Dit) and the oxide trapped charge (Qot) were lower than routine plasma etching. Furthermore, the decrease in capacitor size does not lead to an increase in leakage current density, indicating less plasma induced side-wall damage. We present a plasma-induced gate stack damage model which we demonstrate by using these two different etching configurations. These results show that NBE is effective in preventing plasma-induced damage at the high-k/Si interface and on the high-k oxide sidewall and thus improve the electrical performance of the gate structure.

PV inverter performance and reliability: What is the role of the bus capacitor?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Flicker, Jack; Kaplar, Robert; Marinella, Matthew

In order to elucidate how the degradation of individual components affects the state of the photovoltaic inverter as a whole, we have carried out SPICE simulations to investigate the voltage and current ripple on the DC bus. The bus capacitor is generally considered to be among the least reliable components of the system, so we have simulated how the degradation of bus capacitors affects the AC ripple at the terminals of the PV module. Degradation-induced ripple leads to an increased degradation rate in a positive feedback cycle. Additionally, laboratory experiments are being carried out to ascertain the reliability of metallizedmore » thin film capacitors. By understanding the degradation mechanisms and their effects on the inverter as a system, steps can be made to more effectively replace marginal components with more reliable ones, increasing the lifetime and efficiency of the inverter and decreasing its cost per watt towards the US Department of Energy goals.« less

CD8+ T Cell Exhaustion, Suppressed Gamma Interferon Production, and Delayed Memory Response Induced by Chronic Brucella melitensis Infection

PubMed Central

Durward-Diioia, Marina; Harms, Jerome; Khan, Mike; Hall, Cherisse; Smith, Judith A.

2015-01-01

Brucella melitensis is a well-adapted zoonotic pathogen considered a scourge of mankind since recorded history. In some cases, initial infection leads to chronic and reactivating brucellosis, incurring significant morbidity and economic loss. The mechanism by which B. melitensis subverts adaptive immunological memory is poorly understood. Previous work has shown that Brucella-specific CD8+ T cells express gamma interferon (IFN-γ) and can transition to long-lived memory cells but are not polyfunctional. In this study, chronic infection of mice with B. melitensis led to CD8+ T cell exhaustion, manifested by programmed cell death 1 (PD-1) and lymphocyte activation gene 3 (LAG-3) expression and a lack of IFN-γ production. The B. melitensis-specific CD8+ T cells that produced IFN-γ expressed less IFN-γ per cell than did CD8+ cells from uninfected mice. Both memory precursor (CD8+ LFA1HI CD127HI KLRG1LO) and long-lived memory (CD8+ CD27HI CD127HI KLRG1LO) cells were identified during chronic infection. Interestingly, after adoptive transfer, mice receiving cells from chronically infected animals were able to contain infection more rapidly than recipients of cells from acutely infected or uninfected donors, although the proportions of exhausted CD8+ T cells increased after adoptive transfer in both challenged and unchallenged recipients. CD8+ T cells of challenged recipients initially retained the stunted IFN-γ production found prior to transfer, and cells from acutely infected mice were never seen to transition to either memory subset at all time points tested, up to 30 days post-primary infection, suggesting a delay in the generation of memory. Here we have identified defects in Brucella-responsive CD8+ T cells that allow chronic persistence of infection. PMID:26416901

Role of effector cells (CCR7(-)CD27(-)) and effector-memory cells (CCR7(-)CD27(+)) in drug-induced maculopapular exanthema.

PubMed

Fernandez, T D; Torres, M J; Lopez, S; Antunez, C; Gomez, E; Del Prado, M F; Canto, G; Blanca, M; Mayorga, C

2010-01-01

Maculopapular exanthema (MPE) induced by drugs is a T-cell mediated reaction and effector cells may play an important role in its development. We assessed the effector and cutaneous homing phenotype in peripheral blood cells from allergic patients after drug stimulation. This study included 10 patients and 10 controls. The effector phenotype (CCR7(-)CD27(+/-)), chemokine receptors (CCR4 and CCR10), and activation (CD25(low)) and regulatory markers (CD25(high)) were measured by flow cytometry in both peripheral blood mononuclear cells (PBMCs) and CD4-T-lymphocytes. Proliferation was determined by 5-(-6)-carboxyfluorescein diacetate succinimidyl ester (CFSE) assay and the migratory capacity by a chemotaxis assay using CCL17 and CCL27. Compared to controls, CCR7(-)CD27(-) cells were increased in patients without (p=0.003) and with drug stimulation (p less than 0.001) and had significantly higher proliferation (p=0.010). CCR10 expression was increased in patients after drug stimulation in total and memory CD27(+) T-cells. Lymphocyte migration with CCL27 was higher in patients with drug stimulation (p=0.048), with a decrease in CCR7(-)CD27(-) (p less than 0.0001) and an increase in CCR7(-)CD27(+) (p=0.017). In patients, CD4-T-lymphocytes were significantly activated after drug stimulation (p less than 0.001). In conclusion, we show that effector memory CD4(+) T-cells (CCR7(-)CD27(+)) respond specifically to the drug responsible for MPE and confirm previous data about the involvement of CCR10 in cell trafficking to the skin.

Memory Applications Using Resonant Tunneling Diodes

NASA Astrophysics Data System (ADS)

Shieh, Ming-Huei

Resonant tunneling diodes (RTDs) producing unique folding current-voltage (I-V) characteristics have attracted considerable research attention due to their promising application in signal processing and multi-valued logic. The negative differential resistance of RTDs renders the operating points self-latching and stable. We have proposed a multiple -dimensional multiple-state RTD-based static random-access memory (SRAM) cell in which the number of stable states can significantly be increased to (N + 1)^ m or more for m number of N-peak RTDs connected in series. The proposed cells take advantage of the hysteresis and folding I-V characteristics of RTD. Several cell designs are presented and evaluated. A two-dimensional nine-state memory cell has been implemented and demonstrated by a breadboard circuit using two 2-peak RTDs. The hysteresis phenomenon in a series of RTDs is also further analyzed. The switch model provided in SPICE 3 can be utilized to simulate the hysteretic I-V characteristics of RTDs. A simple macro-circuit is described to model the hysteretic I-V characteristic of RTD for circuit simulation. A new scheme for storing word-wide multiple-bit information very efficiently in a single memory cell using RTDs is proposed. An efficient and inexpensive periphery circuit to read from and write into the cell is also described. Simulation results on the design of a 3-bit memory cell scheme using one-peak RTDs are also presented. Finally, a binary transistor-less memory cell which is only composed of a pair of RTDs and an ordinary rectifier diode is presented and investigated. A simple means for reading and writing information from or into the memory cell is also discussed.

Redirection to the bone marrow improves T cell persistence and antitumor functions.

PubMed

Khan, Anjum B; Carpenter, Ben; Santos E Sousa, Pedro; Pospori, Constandina; Khorshed, Reema; Griffin, James; Velica, Pedro; Zech, Mathias; Ghorashian, Sara; Forrest, Calum; Thomas, Sharyn; Gonzalez Anton, Sara; Ahmadi, Maryam; Holler, Angelika; Flutter, Barry; Ramirez-Ortiz, Zaida; Means, Terry K; Bennett, Clare L; Stauss, Hans; Morris, Emma; Lo Celso, Cristina; Chakraverty, Ronjon

2018-05-01

A key predictor for the success of gene-modified T cell therapies for cancer is the persistence of transferred cells in the patient. The propensity of less differentiated memory T cells to expand and survive efficiently has therefore made them attractive candidates for clinical application. We hypothesized that redirecting T cells to specialized niches in the BM that support memory differentiation would confer increased therapeutic efficacy. We show that overexpression of chemokine receptor CXCR4 in CD8+ T cells (TCXCR4) enhanced their migration toward vascular-associated CXCL12+ cells in the BM and increased their local engraftment. Increased access of TCXCR4 to the BM microenvironment induced IL-15-dependent homeostatic expansion and promoted the differentiation of memory precursor-like cells with low expression of programmed death-1, resistance to apoptosis, and a heightened capacity to generate polyfunctional cytokine-producing effector cells. Following transfer to lymphoma-bearing mice, TCXCR4 showed a greater capacity for effector expansion and better tumor protection, the latter being independent of changes in trafficking to the tumor bed or local out-competition of regulatory T cells. Thus, redirected homing of T cells to the BM confers increased memory differentiation and antitumor immunity, suggesting an innovative solution to increase the persistence and functions of therapeutic T cells.

Silicon/copper dome-patterned electrodes for high-performance hybrid supercapacitors

PubMed Central

Liu, Xuyan; Jung, Hun-Gi; Kim, Sang-Ok; Choi, Ho-Suk; Lee, Sangwha; Moon, Jun Hyuk; Lee, Joong Kee

2013-01-01

This study proposes a method for manufacturing high-performance electrode materials in which controlling the shape of the current collector and electrode material for a Li-ion capacitor (LIC). In particular, the proposed LIC manufacturing method maintains the high voltage of a cell by using a microdome-patterned electrode material, allowing for reversible reactions between the Li-ion and the active material for an extended period of time. As a result, the LICs exhibit initial capacities of approximately 42 F g−1, even at 60 A g−1. The LICs also exhibit good cycle performance up to approximately 15,000 cycles. In addition, these advancements allow for a considerably higher energy density than other existing capacitor systems. The energy density of the proposed LICs is approximately nine, two, and 1.5 times higher than those of the electrochemical double layer capacitor (EDLC), AC/LiMn2O4 hybrid capacitor, and intrinsic Si/AC LIC, respectively. PMID:24292725

Effect of embedded metal nanocrystals on the resistive switching characteristics in NiN-based resistive random access memory cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yun, Min Ju; Kim, Hee-Dong; Man Hong, Seok

2014-03-07

The metal nanocrystals (NCs) embedded-NiN-based resistive random access memory cells are demonstrated using several metal NCs (i.e., Pt, Ni, and Ti) with different physical parameters in order to investigate the metal NC's dependence on resistive switching (RS) characteristics. First, depending on the electronegativity of metal, the size of metal NCs is determined and this affects the operating current of memory cells. If metal NCs with high electronegativity are incorporated, the size of the NCs is reduced; hence, the operating current is reduced owing to the reduced density of the electric field around the metal NCs. Second, the potential wells aremore » formed by the difference of work function between the metal NCs and active layer, and the barrier height of the potential wells affects the level of operating voltage as well as the conduction mechanism of metal NCs embedded memory cells. Therefore, by understanding these correlations between the active layer and embedded metal NCs, we can optimize the RS properties of metal NCs embedded memory cells as well as predict their conduction mechanisms.« less

Nanostructured Na2Ti9O19 for Hybrid Sodium-Ion Capacitors with Excellent Rate Capability.

PubMed

Bhat, Swetha S M; Babu, Binson; Feygenson, Mikhail; Neuefeind, Joerg C; Shaijumon, M M

2018-01-10

Herein, we report a new Na-insertion electrode material, Na 2 Ti 9 O 19 , as a potential candidate for Na-ion hybrid capacitors. We study the structural properties of nanostructured Na 2 Ti 9 O 19 , synthesized by a hydrothermal technique, upon electrochemical cycling vs Na. Average and local structures of Na 2 Ti 9 O 19 are elucidated from neutron Rietveld refinement and pair distribution function (PDF), respectively, to investigate the initial discharge and charge events. Rietveld refinement reveals electrochemical cycling of Na 2 Ti 9 O 19 is driven by single-phase solid solution reaction during (de)sodiation without any major structural deterioration, keeping the average structure intact. Unit cell volume and lattice evolution on discharge process is inherently related to TiO 6 distortion and Na ion perturbations, while the PDF reveals the deviation in the local structure after sodiation. Raman spectroscopy and X-ray photoelectron spectroscopy studies further corroborate the average and local structural behavior derived from neutron diffraction measurements. Also, Na 2 Ti 9 O 19 shows excellent Na-ion kinetics with a capacitve nature of 86% at 1.0 mV s -1 , indicating that the material is a good anode candidate for a sodium-ion hybrid capacitor. A full cell hybrid Na-ion capacitor is fabricated by using Na 2 Ti 9 O 19 as anode and activated porous carbon as cathode, which exhibits excellent electrochemical properties, with a maximum energy density of 54 Wh kg -1 and a maximum power density of 5 kW kg -1 . Both structural insights and electrochemical investigation suggest that Na 2 Ti 9 O 19 is a promising negative electrode for sodium-ion batteries and hybrid capacitors.

Ferroelectric symmetry-protected multibit memory cell

DOE PAGES

Baudry, Laurent; Lukyanchuk, Igor; Vinokur, Valerii M.

2017-02-08

Here, the tunability of electrical polarization in ferroelectrics is instrumental to their applications in information-storage devices. The existing ferroelectric memory cells are based on the two-level storage capacity with the standard binary logics. However, the latter have reached its fundamental limitations. Here we propose ferroelectric multibit cells (FMBC) utilizing the ability of multiaxial ferroelectric materials to pin the polarization at a sequence of the multistable states. Employing the catastrophe theory principles we show that these states are symmetry-protected against the information loss and thus realize novel topologically-controlled access memory (TAM). Our findings enable developing a platform for the emergent many-valuedmore » non-Boolean information technology and target challenges posed by needs of quantum and neuromorphic computing.« less

Regionally compartmentalized resident memory T cells mediate naturally acquired protection against pneumococcal pneumonia.

PubMed

Smith, N Ms; Wasserman, G A; Coleman, F T; Hilliard, K L; Yamamoto, K; Lipsitz, E; Malley, R; Dooms, H; Jones, M R; Quinton, L J; Mizgerd, J P

2018-01-01

As children age, they become less susceptible to the diverse microbes causing pneumonia. These microbes are pathobionts that infect the respiratory tract multiple times during childhood, generating immunological memory. To elucidate mechanisms of such naturally acquired immune protection against pneumonia, we modeled a relevant immunological history in mice by infecting their airways with mismatched serotypes of Streptococcus pneumoniae (pneumococcus). Previous pneumococcal infections provided protection against a heterotypic, highly virulent pneumococcus, as evidenced by reduced bacterial burdens and long-term sterilizing immunity. This protection was diminished by depletion of CD4 + cells prior to the final infection. The resolution of previous pneumococcal infections seeded the lungs with CD4 + resident memory T (T RM ) cells, which responded to heterotypic pneumococcus stimulation by producing multiple effector cytokines, particularly interleukin (IL)-17A. Following lobar pneumonias, IL-17-producing CD4 + T RM cells were confined to the previously infected lobe, rather than dispersed throughout the lower respiratory tract. Importantly, pneumonia protection also was confined to that immunologically experienced lobe. Thus regionally localized memory cells provide superior local tissue protection to that mediated by systemic or central memory immune defenses. We conclude that respiratory bacterial infections elicit CD4 + T RM cells that fill a local niche to optimize heterotypic protection of the affected tissue, preventing pneumonia.

Opening of K+ channels by capacitive stimulation from silicon chip

NASA Astrophysics Data System (ADS)

Ulbrich, M. H.; Fromherz, P.

2005-10-01

The development of stable neuroelectronic systems requires a stimulation of nerve cells from semiconductor devices without electrochemical effects at the electrolyte/solid interface and without damage of the cell membrane. The interaction must rely on a reversible opening of voltage-gated ion channels by capacitive coupling. In a proof-of-principle experiment, we demonstrate that Kv1.3 potassium channels expressed in HEK293 cells can be opened from an electrolyte/oxide/silicon (EOS) capacitor. A sufficient strength of electrical coupling is achieved by insulating silicon with a thin film of TiO2 to achieve a high capacitance and by removing NaCl from the electrolyte to enhance the resistance of the cell-chip contact. When a decaying voltage ramp is applied to the EOS capacitor, an outward current through the attached cell membrane is observed that is specific for Kv1.3 channels. An open probability up to fifty percent is estimated by comparison with a numerical simulation of the cell-chip contact.

Origin and fate of lymphocytic choriomeningitis virus-specific CD8+ T cells coexpressing the inhibitory NK cell receptor Ly49G2.

PubMed

Peacock, Craig D; Welsh, Raymond M

2004-07-01

CD8+ T cells that coexpress the inhibitory NK cell receptor, Ly49G2 (G2), are present in immunologically naive C57BL/6 mice but display Ags found on memory T cells. To assess how G2+CD8+ cells relate to bona fide memory cells, we examined the origin and fate of lymphocytic choriomeningitis virus (LCMV)-induced G2+CD8+ cells. During early (day 4) acute LCMV infection, both G2+ and G2-CD8+ T cell subsets underwent an attrition in number and displayed an activation (CD69(high)1B11(high)CD62L(low)) phenotype. By day 8, both subsets synthesized IFN-gamma in response to immunodominant LCMV peptides, though the expansion of G2+ cells was less than that of G2- cells. Adoptive transfer experiments with purified G2- or G2+CD8+ cells from naive mice indicated that the LCMV-specific G2+ subset was derived from a pre-existing G2+ population and not generated from G2- cells responding to LCMV infection. Their participation in the LCMV-specific T cell response increased with age, reflecting an increase in the size of the pre-existing G2+ pool. Following establishment of stable LCMV memory, the proportion of CD8+ cells coexpressing G2 was reduced in comparison to naive controls, presumably due to displacement by G2- LCMV-specific memory cells. LCMV-specific G2+ cells were present in the memory pool, but at low frequencies, and they did not exhibit the typical phenotypic changes of reactivation during secondary challenge. We suggest that G2+CD8+ cells represent a cell lineage distinct from bona fide memory T cells, but that they can participate in an acute virus-specific T cell response.

Bone Marrow Mesenchymal Stem Cells Enhance the Differentiation of Human Switched Memory B Lymphocytes into Plasma Cells in Serum-Free Medium

PubMed Central

Gervais-St-Amour, Catherine

2016-01-01

The differentiation of human B lymphocytes into plasma cells is one of the most stirring questions with regard to adaptive immunity. However, the terminal differentiation and survival of plasma cells are still topics with much to be discovered, especially when targeting switched memory B lymphocytes. Plasma cells can migrate to the bone marrow in response to a CXCL12 gradient and survive for several years while secreting antibodies. In this study, we aimed to get closer to niches favoring plasma cell survival. We tested low oxygen concentrations and coculture with mesenchymal stem cells (MSC) from human bone marrow. Besides, all cultures were performed using an animal protein-free medium. Overall, our model enables the generation of high proportions of CD38+CD138+CD31+ plasma cells (≥50%) when CD40-activated switched memory B lymphocytes were cultured in direct contact with mesenchymal stem cells. In these cultures, the secretion of CXCL12 and TGF-β, usually found in the bone marrow, was linked to the presence of MSC. The level of oxygen appeared less impactful than the contact with MSC. This study shows for the first time that expanded switched memory B lymphocytes can be differentiated into plasma cells using exclusively a serum-free medium. PMID:27872867

A Compact Operational Amplifier with Load-Insensitive Stability Compensation for High-Precision Transducer Interface

PubMed Central

Yang, Xi

2018-01-01

High-resolution electronic interface circuits for transducers with nonlinear capacitive impedance need an operational amplifier, which is stable for a wide range of load capacitance. Such operational amplifier in a conventional design requires a large area for compensation capacitors, increasing costs and limiting applications. In order to address this problem, we present a gain-boosted two-stage operational amplifier, whose frequency response compensation capacitor size is insensitive to the load capacitance and also orders of magnitude smaller compared to the conventional Miller-compensation capacitor that often dominates chip area. By exploiting pole-zero cancellation between a gain-boosting stage and the main amplifier stage, the compensation capacitor of the proposed operational amplifier becomes less dependent of load capacitance, so that it can also operate with a wide range of load capacitance. A prototype operational amplifier designed in 0.13-μm complementary metal–oxide–semiconductor (CMOS) with a 400-fF compensation capacitor occupies 900-μm2 chip area and achieves 0.022–2.78-MHz unity gain bandwidth and over 65∘ phase margin with a load capacitance of 0.1–15 nF. The prototype amplifier consumes 7.6 μW from a single 1.0-V supply. For a given compensation capacitor size and a chip area, the prototype design demonstrates the best reported performance trade-off on unity gain bandwidth, maximum stable load capacitance, and power consumption. PMID:29382183

Ferroelectric memory based on molybdenum disulfide and ferroelectric hafnium oxide

NASA Astrophysics Data System (ADS)

Yap, Wui Chung; Jiang, Hao; Xia, Qiangfei; Zhu, Wenjuan

Recently, ferroelectric hafnium oxide (HfO2) was discovered as a new type of ferroelectric material with the advantages of high coercive field, excellent scalability (down to 2.5 nm), and good compatibility with CMOS processing. In this work, we demonstrate, for the first time, 2D ferroelectric memories with molybdenum disulfide (MoS2) as the channel material and aluminum doped HfO2 as the ferroelectric gate dielectric. A 16 nm thick layer of HfO2, doped with 5.26% aluminum, was deposited via atomic layer deposition (ALD), then subjected to rapid thermal annealing (RTA) at 1000 °C, and the polarization-voltage characteristics of the resulting metal-ferroelectric-metal (MFM) capacitors were measured, showing a remnant polarization of 0.6 μC/cm2. Ferroelectric memories with embedded ferroelectric hafnium oxide stacks and monolayer MoS2 were fabricated. The transfer characteristics after program and erase pulses revealed a clear ferroelectric memory window. In addition, endurance (up to 10,000 cycles) of the devices were tested and effects associated with ferroelectric materials, such as the wake-up effect and polarization fatigue, were observed. This research can potentially lead to advances of 2D materials in low-power logic and memory applications.

Capacitance-voltage measurement in memory devices using ferroelectric polymer

NASA Astrophysics Data System (ADS)

Nguyen, Chien A.; Lee, Pooi See

2006-01-01

Application of thin polymer film as storing mean for non-volatile memory devices is investigated. Capacitance-voltage (C-V) measurement of metal-ferroelectric-metal device using ferroelectric copolymer P(VDF-TrFE) as dielectric layer shows stable 'butter-fly' curve. The two peaks in C-V measurement corresponding to the largest capacitance are coincidental at the coercive voltages that give rise to zero polarization in the polarization hysteresis measurement. By comparing data of C-V and P-E measurement, a correlation between two types of hysteresis is established in which it reveals simultaneous electrical processes occurring inside the device. These processes are caused by the response of irreversible and reversible polarization to the applied electric field that can be used to present a memory window. The memory effect of ferroelectric copolymer is further demonstrated for fabricating polymeric non-volatile memory devices using metal-ferroelectric-insulator-semiconductor structure (MFIS). By applying different sweeping voltages at the gate, bidirectional flat-band voltage shift is observed in the ferroelectric capacitor. The asymmetrical shift after negative sweeping is resulted from charge accumulation at the surface of Si substrate caused by the dipole direction in the polymer layer. The effect is reversed for positive voltage sweeping.

Tamper indicating bolt

DOEpatents

Blagin, Sergei V.; Barkanov, Boris P.

2004-09-14

A tamper-indicating fastener has a cylindrical body with threads extending from one end along a portion of the body, and a tamper indicating having a transducer for converting physical properties of the body into electronic data; electronics for recording the electronic data; and means for communicating the recorded information to a remote location from said fastener. The electronics includes a capacitor that varies as a function of force applied by the fastener, and non-volatile memory for recording instances when the capacitance varies, providing an indication of unauthorized access.

SFG synthesis of general high-order all-pass and all-pole current transfer functions using CFTAs.

PubMed

Tangsrirat, Worapong

2014-01-01

An approach of using the signal flow graph (SFG) technique to synthesize general high-order all-pass and all-pole current transfer functions with current follower transconductance amplifiers (CFTAs) and grounded capacitors has been presented. For general nth-order systems, the realized all-pass structure contains at most n + 1 CFTAs and n grounded capacitors, while the all-pole lowpass circuit requires only n CFTAs and n grounded capacitors. The resulting circuits obtained from the synthesis procedure are resistor-less structures and especially suitable for integration. They also exhibit low-input and high-output impedances and also convenient electronic controllability through the g m-value of the CFTA. Simulation results using real transistor model parameters ALA400 are also included to confirm the theory.

SFG Synthesis of General High-Order All-Pass and All-Pole Current Transfer Functions Using CFTAs

PubMed Central

Tangsrirat, Worapong

2014-01-01

An approach of using the signal flow graph (SFG) technique to synthesize general high-order all-pass and all-pole current transfer functions with current follower transconductance amplifiers (CFTAs) and grounded capacitors has been presented. For general nth-order systems, the realized all-pass structure contains at most n + 1 CFTAs and n grounded capacitors, while the all-pole lowpass circuit requires only n CFTAs and n grounded capacitors. The resulting circuits obtained from the synthesis procedure are resistor-less structures and especially suitable for integration. They also exhibit low-input and high-output impedances and also convenient electronic controllability through the g m-value of the CFTA. Simulation results using real transistor model parameters ALA400 are also included to confirm the theory. PMID:24688375

Calculation and measurement of a neutral air flow velocity impacting a high voltage capacitor with asymmetrical electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malík, M., E-mail: michal.malik@tul.cz; Primas, J.; Kopecký, V.

2014-01-15

This paper deals with the effects surrounding phenomenon of a mechanical force generated on a high voltage asymmetrical capacitor (the so called Biefeld-Brown effect). A method to measure this force is described and a formula to calculate its value is also given. Based on this the authors derive a formula characterising the neutral air flow velocity impacting an asymmetrical capacitor connected to high voltage. This air flow under normal circumstances lessens the generated force. In the following part this velocity is measured using Particle Image Velocimetry measuring technique and the results of the theoretically calculated velocity and the experimentally measuredmore » value are compared. The authors found a good agreement between the results of both approaches.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elizondo-Decanini, Juan M.; Coleman, Phillip D.; Moorman, Matthew W.

Low- and high-voltage Soliton waves were produced and used to demonstrate collision and compression using diode-based nonlinear transmission lines. Experiments demonstrate soliton addition and compression using homogeneous nonlinear lines. We built the nonlinear lines using commercially available diodes. These diodes are chosen after their capacitance versus voltage dependence is used in a model and the line design characteristics are calculated and simulated. Nonlinear ceramic capacitors are then used to demonstrate high-voltage pulse amplification and compression. The line is designed such that a simple capacitor discharge, input signal, develops soliton trains in as few as 12 stages. We also demonstrated outputmore » voltages in excess of 40 kV using Y5V-based commercial capacitors. The results show some key features that determine efficient production of trains of solitons in the kilovolt range.« less

An accurate on-site calibration system for electronic voltage transformers using a standard capacitor

NASA Astrophysics Data System (ADS)

Hu, Chen; Chen, Mian-zhou; Li, Hong-bin; Zhang, Zhu; Jiao, Yang; Shao, Haiming

2018-05-01

Ordinarily electronic voltage transformers (EVTs) are calibrated off-line and the calibration procedure requires complex switching operations, which will influence the reliability of the power grid and induce large economic losses. To overcome this problem, this paper investigates a 110 kV on-site calibration system for EVTs, including a standard channel, a calibrated channel and a PC equipped with the LabView environment. The standard channel employs a standard capacitor and an analogue integrating circuit to reconstruct the primary voltage signal. Moreover, an adaptive full-phase discrete Fourier transform (DFT) algorithm is proposed to extract electrical parameters. The algorithm involves the process of extracting the frequency of the grid, adjusting the operation points, and calculating the results using DFT. In addition, an insulated automatic lifting device is designed to realize the live connection of the standard capacitor, which is driven by a wireless remote controller. A performance test of the capacitor verifies the accurateness of the standard capacitor. A system calibration test shows that the system ratio error is less than 0.04% and the phase error is below 2‧, which meets the requirement of the 0.2 accuracy class. Finally, the developed calibration system was used in a substation, and the field test data validates the availability of the system.

Feedback Augmented Sub-Ranging (FASR) Quantizer

NASA Technical Reports Server (NTRS)

Guilligan, Gerard

2012-01-01

This innovation is intended to reduce the size, power, and complexity of pipeline analog-to-digital converters (ADCs) that require high resolution and speed along with low power. Digitizers are important components in any application where analog signals (such as light, sound, temperature, etc.) need to be digitally processed. The innovation implements amplification of a sampled residual voltage in a switched capacitor amplifier stage that does not depend on charge redistribution. The result is less sensitive to capacitor mismatches that cause gain errors, which are the main limitation of such amplifiers in pipeline ADCs. The residual errors due to mismatch are reduced by at least a factor of 16, which is equivalent to at least 4 bits of improvement. The settling time is also faster because of a higher feedback factor. In traditional switched capacitor residue amplifiers, closed-loop amplification of a sampled and held residue signal is achieved by redistributing sampled charge onto a feedback capacitor around a high-gain transconductance amplifier. The residual charge that was sampled during the acquisition or sampling phase is stored on two or more capacitors, often equal in value or integral multiples of each other. During the hold or amplification phase, all of the charge is redistributed onto one capacitor in the feedback loop of the amplifier to produce an amplified voltage. The key error source is the non-ideal ratios of feedback and input capacitors caused by manufacturing tolerances, called mismatches. The mismatches cause non-ideal closed-loop gain, leading to higher differential non-linearity. Traditional solutions to the mismatch errors are to use larger capacitor values (than dictated by thermal noise requirements) and/or complex calibration schemes, both of which increase the die size and power dissipation. The key features of this innovation are (1) the elimination of the need for charge redistribution to achieve an accurate closed-loop gain of two, (2) a higher feedback factor in the amplifier stage giving a higher closed-loop bandwidth compared to the prior art, and (3) reduced requirement for calibration. The accuracy of the new amplifier is mainly limited by the sampling networks parasitic capacitances, which should be minimized in relation to the sampling capacitors.

"Shape function + memory mechanism"-based hysteresis modeling of magnetorheological fluid actuators

NASA Astrophysics Data System (ADS)

Qian, Li-Jun; Chen, Peng; Cai, Fei-Long; Bai, Xian-Xu

2018-03-01

A hysteresis model based on "shape function + memory mechanism" is presented and its feasibility is verified through modeling the hysteresis behavior of a magnetorheological (MR) damper. A hysteresis phenomenon in resistor-capacitor (RC) circuit is first presented and analyzed. In the hysteresis model, the "memory mechanism" originating from the charging and discharging processes of the RC circuit is constructed by adopting a virtual displacement variable and updating laws for the reference points. The "shape function" is achieved and generalized from analytical solutions of the simple semi-linear Duhem model. Using the approach, the memory mechanism reveals the essence of specific Duhem model and the general shape function provides a direct and clear means to fit the hysteresis loop. In the frame of the structure of a "Restructured phenomenological model", the original hysteresis operator, i.e., the Bouc-Wen operator, is replaced with the new hysteresis operator. The comparative work with the Bouc-Wen operator based model demonstrates superior performances of high computational efficiency and comparable accuracy of the new hysteresis operator-based model.

Toward self-assembled ferroelectric random access memories: hard-wired switching capacitor arrays with almost Tb/in.(2) densities.

PubMed

Evans, Paul R; Zhu, Xinhau; Baxter, Paul; McMillen, Mark; McPhillips, John; Morrison, Finlay D; Scott, James F; Pollard, Robert J; Bowman, Robert M; Gregg, J Marty

2007-05-01

We report on the successful fabrication of arrays of switchable nanocapacitors made by harnessing the self-assembly of materials. The structures are composed of arrays of 20-40 nm diameter Pt nanowires, spaced 50-100 nm apart, electrodeposited through nanoporous alumina onto a thin film lower electrode on a silicon wafer. A thin film ferroelectric (both barium titanate (BTO) and lead zirconium titanate (PZT)) has been deposited on top of the nanowire array, followed by the deposition of thin film upper electrodes. The PZT nanocapacitors exhibit hysteresis loops with substantial remnant polarizations, while although the switching performance was inferior, the low-field characteristics of the BTO nanocapacitors show dielectric behavior comparable to conventional thin film heterostructures. While registration is not sufficient for commercial RAM production, this is nevertheless an embryonic form of the highest density hard-wired FRAM capacitor array reported to date and compares favorably with atomic force microscopy read-write densities.

Foxp3+ T cells inhibit antitumor immune memory modulated by mTOR inhibition.

PubMed

Wang, Yanping; Sparwasser, Tim; Figlin, Robert; Kim, Hyung L

2014-04-15

Inhibition of mTOR signaling enhances antitumor memory lymphocytes. However, pharmacologic mTOR inhibition also enhances regulatory T-cell (Treg) activity. To counter this effect, Treg control was added to mTOR inhibition in preclinical models. Tregs were controlled with CD4-depleting antibodies because CD4 depletion has high translational potential and already has a well-established safety profile in patients. The antitumor activity of the combination therapy was CD8 dependent and controlled growth of syngeneic tumors even when an adoptive immunotherapy was not used. Lymphocytes resulting from the combination therapy could be transferred into naïve mice to inhibit aggressive growth of lung metastases. The combination therapy enhanced CD8 memory formation as determined by memory markers and functional studies of immune recall. Removal of FoxP3-expressing T lymphocytes was the mechanism underlying immunologic memory formation following CD4 depletion. This was confirmed using transgenic DEREG (depletion of regulatory T cells) mice to specifically remove Foxp3(+) T cells. It was further confirmed with reciprocal studies where stimulation of immunologic memory because of CD4 depletion was completely neutralized by adoptively transferring tumor-specific Foxp3(+) T cells. Also contributing to tumor control, Tregs that eventually recovered following CD4 depletion were less immunosuppressive. These results provide a rationale for further study of mTOR inhibition and CD4 depletion in patients. ©2014 AACR.

Note: All-digital CMOS MOS-capacitor-based pulse-shrinking mechanism suitable for time-to-digital converters

NASA Astrophysics Data System (ADS)

Chen, Chun-Chi; Hwang, Chorng-Sii; Lin, You-Ting; Liu, Keng-Chih

2015-12-01

This paper presents an all-digital CMOS pulse-shrinking mechanism suitable for time-to-digital converters (TDCs). A simple MOS capacitor is used as a pulse-shrinking cell to perform time attenuation for time resolving. Compared with a previous pulse-shrinking mechanism, the proposed mechanism provides an appreciably improved temporal resolution with high linearity. Furthermore, the use of a binary-weighted pulse-shrinking unit with scaled MOS capacitors is proposed for achieving a programmable resolution. A TDC involving the proposed mechanism was fabricated using a TSMC (Taiwan Semiconductor Manufacturing Company) 0.18-μm CMOS process, and it has a small area of nearly 0.02 mm2 and an integral nonlinearity error of ±0.8 LSB for a resolution of 24 ps.

Carbon-Based Materials for Lithium-Ion Batteries, Electrochemical Capacitors, and Their Hybrid Devices.

PubMed

Yao, Fei; Pham, Duy Tho; Lee, Young Hee

2015-07-20

A rapidly developing market for portable electronic devices and hybrid electrical vehicles requires an urgent supply of mature energy-storage systems. As a result, lithium-ion batteries and electrochemical capacitors have lately attracted broad attention. Nevertheless, it is well known that both devices have their own drawbacks. With the fast development of nanoscience and nanotechnology, various structures and materials have been proposed to overcome the deficiencies of both devices to improve their electrochemical performance further. In this Review, electrochemical storage mechanisms based on carbon materials for both lithium-ion batteries and electrochemical capacitors are introduced. Non-faradic processes (electric double-layer capacitance) and faradic reactions (pseudocapacitance and intercalation) are generally explained. Electrochemical performance based on different types of electrolytes is briefly reviewed. Furthermore, impedance behavior based on Nyquist plots is discussed. We demonstrate the influence of cell conductivity, electrode/electrolyte interface, and ion diffusion on impedance performance. We illustrate that relaxation time, which is closely related to ion diffusion, can be extracted from Nyquist plots and compared between lithium-ion batteries and electrochemical capacitors. Finally, recent progress in the design of anodes for lithium-ion batteries, electrochemical capacitors, and their hybrid devices based on carbonaceous materials are reviewed. Challenges and future perspectives are further discussed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Breaking Barriers to Low-Cost Modular Inverter Production & Use

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bogdan Borowy; Leo Casey; Jerry Foshage

2005-05-31

The goal of this cost share contract is to advance key technologies to reduce size, weight and cost while enhancing performance and reliability of Modular Inverter Product for Distributed Energy Resources (DER). Efforts address technology development to meet technical needs of DER market protection, isolation, reliability, and quality. Program activities build on SatCon Technology Corporation inverter experience (e.g., AIPM, Starsine, PowerGate) for Photovoltaic, Fuel Cell, Energy Storage applications. Efforts focused four technical areas, Capacitors, Cooling, Voltage Sensing and Control of Parallel Inverters. Capacitor efforts developed a hybrid capacitor approach for conditioning SatCon's AIPM unit supply voltages by incorporating several typesmore » and sizes to store energy and filter at high, medium and low frequencies while minimizing parasitics (ESR and ESL). Cooling efforts converted the liquid cooled AIPM module to an air-cooled unit using augmented fin, impingement flow cooling. Voltage sensing efforts successfully modified the existing AIPM sensor board to allow several, application dependent configurations and enabling voltage sensor galvanic isolation. Parallel inverter control efforts realized a reliable technique to control individual inverters, connected in a parallel configuration, without a communication link. Individual inverter currents, AC and DC, were balanced in the paralleled modules by introducing a delay to the individual PWM gate pulses. The load current sharing is robust and independent of load types (i.e., linear and nonlinear, resistive and/or inductive). It is a simple yet powerful method for paralleling both individual devices dramatically improves reliability and fault tolerance of parallel inverter power systems. A patent application has been made based on this control technology.« less

Driving mechanisms of passive and active transport across cellular membranes as the mechanisms of cell metabolism and development as well as the mechanisms of cellular distance reactions on hormonal expression and the immune response.

PubMed

Ponisovskiy, M R

2011-01-01

The article presents mechanisms of cell metabolism, cell development, cell activity, and maintenance of cellular stability. The literature is reviewed from the point of view of these concepts. The balance between anabolic and catabolic processes induces chemical potentials in the extracellular and intracellular media. The chemical potentials of these media are defined as the driving forces of both passive and active transport of substances across cellular membranes. The driving forces of substance transport across cellular membranes as in cellular metabolism and in immune responses and hormonal expressions are considered in the biochemical and biophysical models, reflecting the mechanisms for maintenance of stability of the internal medium and internal energy of an organism. The interactions of passive transport and active transport of substances across cellular walls promote cell proliferation, as well as the mechanism of cellular capacitors, promoting remote reactions across distance for hormonal expression and immune responses. The offered concept of cellular capacitors has given the possibility to explain the mechanism of remote responses of cells to new situations, resulting in the appearance of additional agents. The biophysical model develops an explanation of some cellular functions: cellular membrane action have been identified with capacitor action, based on the similarity of the structures and as well as on similarity of biophysical properties of electric data that confirm the action of the compound-specific interactions of cells within an organism, promoting hormonal expressions and immune responses to stabilize the thermodynamic system of an organism. Comparison of a cellular membrane action to a capacitor has given the possibility for the explanations of exocytosis and endocytosis mechanisms, internalization of the receptor-ligand complex, selection as a receptor reaction to a ligand by immune responses or hormonal effects, reflecting cellular distance reactions on the hormonal expressions, immune responses, and specificity of the mechanisms of immune reactions. Reviewing current research of cell activity, explanations are presented of mechanisms of apoptosis, autophagy, hormonal expression, and immune responses from the point of view of described cellular mechanisms. Thermodynamic laws are used to confirm the importance of the actions of these mechanisms for maintenance of stability of the internal medium and internal energy of an organism.

Suppression of Leakage Current of Metal-Insulator-Semiconductor Ta2O5 Capacitors with Al2O3/SiON Buffer Layer

NASA Astrophysics Data System (ADS)

Tonomura, Osamu; Miki, Hiroshi; Takeda, Ken-ichi

2011-10-01

An Al2O3/SiO buffer layer was incorporated in a metal-insulator-semiconductor (MIS) Ta2O5 capacitor for dynamic random access memory (DRAM) application. Al2O3 was chosen for the buffer layer owing to its high band offset against silicon and oxidation resistance against increase in effective oxide thickness (EOT). It was clarified that post-deposition annealing in nitrogen at 800 °C for 600 s increased the band offset between Al2O3 and the lower electrode and decreased leakage current by two orders of magnitude at 1 V. Furthermore, we predicted and experimentally confirmed that there was an optimized value of y in (Si3N4)y(SiO2)(1-y), which is 0.58, for minimizing the leakage current and EOT of SiON. To clarify the oxidation resistance and appropriate thickness of Al2O3, a TiN/Ta2O5/Al2O3/SiON/polycrystalline-silicon capacitor was fabricated. It was confirmed that the lower electrode was not oxidized during the crystallization annealing of Ta2O5. By setting the Al2O3 thickness to 3.4 nm, the leakage current is lowered below the required value with an EOT of 3.6 nm.

Ionizing radiation effects on electrical and reliability characteristics of sputtered Ta2O5/Si interface

NASA Astrophysics Data System (ADS)

Rao, Ashwath; Verma, Ankita; Singh, B. R.

2015-06-01

This paper describes the effect of ionizing radiation on the interface properties of Al/Ta2O5/Si metal oxide semiconductor (MOS) capacitors using capacitance-voltage (C-V) and current-voltage (I-V) characteristics. The devices were irradiated with X-rays at different doses ranging from 100 rad to 1 Mrad. The leakage behavior, which is an important parameter for memory applications of Al/Ta2O5/Si MOS capacitors, along with interface properties such as effective oxide charges and interface trap density with and without irradiation has been investigated. Lower accumulation capacitance and shift in flat band voltage toward negative value were observed in annealed devices after exposure to radiation. The increase in interfacial oxide layer thickness after irradiation was confirmed by Rutherford Back Scattering measurement. The effect of post-deposition annealing on the electrical behavior of Ta2O5 MOS capacitors was also investigated. Improved electrical and interface properties were obtained for samples deposited in N2 ambient. The density of interface trap states (Dit) at Ta2O5/Si interface sputtered in pure argon ambient was higher compared to samples reactively sputtered in nitrogen-containing plasma. Our results show that reactive sputtering in nitrogen-containing plasma is a promising approach to improve the radiation hardness of Ta2O5/Si MOS devices.

Commercially developed mixed-signal CMOS process features for application in advanced ROICs in 0.18μm technology node

NASA Astrophysics Data System (ADS)

Kar-Roy, Arjun; Hurwitz, Paul; Mann, Richard; Qamar, Yasir; Chaudhry, Samir; Zwingman, Robert; Howard, David; Racanelli, Marco

2012-06-01

Increasingly complex specifications for next-generation focal plane arrays (FPAs) require smaller pixels, larger array sizes, reduced power consumption and lower cost. We have previously reported on the favorable features available in the commercially available TowerJazz CA18 0.18μm mixed-signal CMOS technology platform for advanced read-out integrated circuit (ROIC) applications. In his paper, new devices in development for commercial purposes and which may have applications in advanced ROICs are reported. First, results of buried-channel 3.3V field effect transistors (FETs) are detailed. The buried-channel pFETs show flicker (1/f) noise reductions of ~5X in comparison to surface-channel pFETs along with a significant reduction of the body constant parameter. The buried-channel nFETs show ~2X reduction of 1/f noise versus surface-channel nFETs. Additional reduced threshold voltage nFETs and pFETs are also described. Second, a high-density capacitor solution with a four-stacked linear (metal-insulator-metal) MIM capacitor having capacitance density of 8fF/μm2 is reported. Additional stacking with MOS capacitor in a 5V tolerant process results in >50fC/μm2 charge density. Finally, one-time programmable (OTP) and multi-time programmable (MTP) non-volatile memory options in the CA18 technology platform are outlined.

Nonvolatile memory behavior of nanocrystalline cellulose/graphene oxide composite films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Valentini, L., E-mail: luca.valentini@unipg.it; Cardinali, M.; Fortunati, E.

2014-10-13

With the continuous advance of modern electronics, the demand for nonvolatile memory cells rapidly grows. In order to develop post-silicon electronic devices, it is necessary to find innovative solutions to the eco-sustainability problem of materials for nonvolatile memory cells. In this work, we realized a resistive memory device based on graphene oxide (GO) and GO/cellulose nanocrystals (CNC) thin films. Aqueous solutions of GO and GO with CNC have been prepared and drop cast between two metal electrodes. Such thin-film based devices showed a transition between low and high conductivity states upon the forward and backward sweeping of an external electricmore » field. This reversible current density transition behavior demonstrates a typical memory characteristic. The obtained results open an easy route for electronic information storage based on the integration of nanocrystalline cellulose onto graphene based devices.« less

Killing of targets by effector CD8 T cells in the mouse spleen follows the law of mass action

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ganusov, Vitaly V

2009-01-01

In contrast with antibody-based vaccines, it has been difficult to measure the efficacy of T cell-based vaccines and to correlate the efficacy of CD8 T cell responses with protection again viral infections. In part, this difficulty is due to poor understanding of the in vivo efficacy of CD8 T cells produced by vaccination. Using a: recently developed experimental method of in vivo cytotoxicity we have investigated quantitative aspects of killing of peptide-pulsed targets by effector and memory CD8 T cells, specific to three epitopes of lymphocytic choriomeningitis virus (LCMV), in the mouse spleen. By analyzing data on killing of targetsmore » with varying number of epitope-specific effector and memory CD8 T cells, we find that killing of targets by effectors follows the law of mass-action, that is the death rate of peptide-pulsed targets is proportional to the frequency of CTLs in the spleen. In contrast, killing of targets by memory CD8 T cells does not follow the mass action law because the death rate of targets saturates at high frequencies of memory CD8 T cells. For both effector and memory cells, we also find little support for the killing term that includes the decrease of the death rate of targets with target cell density. Interestingly, our analysis suggests that at low CD8 T cell frequencies, memory CD8 T cells on the per capita basis are more efficient at killing peptide-pulsed targets than effectors, but at high frequencies, effectors are more efficient killers than memory T cells. Comparison of the estimated killing efficacy of effector T cells with the value that is predicted from theoretical physics and based on motility of T cells in lymphoid tissues, suggests that limiting step in the killing of peptide-pulsed targets is delivering the lethal hit and not finding the target. Our results thus form a basis for quantitative understanding of the process of killing of virus-infected cells by T cell responses in tissues and can be used to correlate the phenotype of vaccine-induced memory CD8 T cells with their killing efficacy in vivo.« less

Total Ionizing Dose Influence on the Single-Event Upset Sensitivity of 130-nm PD SOI SRAMs

NASA Astrophysics Data System (ADS)

Zheng, Qiwen; Cui, Jiangwei; Liu, Mengxin; Zhou, Hang; Liu, Mohan; Wei, Ying; Su, Dandan; Ma, Teng; Lu, Wu; Yu, Xuefeng; Guo, Qi; He, Chengfa

2017-07-01

Effect of total ionizing dose (TID) on single-event upset (SEU) hardness of 130 nm partially depleted (PD) silicon-on-insulator (SOI) static random access memories (SRAMs) is investigated in this paper. The measurable synergistic effect of TID on SEU sensitivity of 130-nm PD SOI SRAM was observed in our experiment, even though that is far less than micrometer and submicrometer devices. Moreover, SEU cross section after TID irradiation has no dependence on the data pattern that was applied during TID exposure: SEU cross sections are characterized by TID data pattern and its complement data pattern are decreased consistently rather than a preferred state and a nonpreferred state as micrometer and sub-micrometer SRAMs. The memory cell test structure allowing direct measurement of static noise margin (SNM) under standby operation was designed using identical memory cell layout of SRAM. Direct measurement of the memory cell SNM shows that both data sides' SNM is decreased by TID, indicating that SEU cross section of 130-nm PD SOI SRAM will be increased by TID. And, the decreased SNM is caused by threshold shift in memory cell transistors induced by “radiation-induced narrow channel effect”.

Electric double-layer capacitor based on zinc metaphosphate glass-derived hydrogel

NASA Astrophysics Data System (ADS)

Akamatsu, Takafumi; Kasuga, Toshihiro; Nogami, Masayuki

2006-04-01

The present work reports the electrochemical characteristics of an electric double-layer capacitor (EDC) cell with an electrolyte consisting of a glass-derived zinc metaphosphate hydrogel (ZP gel) or H3PO4 solution. The EDC cell showed specific discharge capacities of 2.06 and 3.21F/g using the ZP gel and H3PO4 solution, respectively. The EDC cell performed higher voltage retentionability for self-discharge behavior after constant voltage using the ZP gel (0.83V after 24h) than using H3PO4 solution (0.45V after 24h). Self-discharge behaviors of the ZP gel and H3PO4 solution were controlled by a diffusion and current leakage process, respectively. These results show that the ZP gel has a great potential for practical use as an EDC electrolyte.

Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

PubMed Central

Zhao, Chun; Zhao, Ce Zhou; Lu, Qifeng; Yan, Xiaoyi; Taylor, Stephen; Chalker, Paul R.

2014-01-01

Oxide materials with large dielectric constants (so-called high-k dielectrics) have attracted much attention due to their potential use as gate dielectrics in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). A novel characterization (pulse capacitance-voltage) method was proposed in detail. The pulse capacitance-voltage technique was employed to characterize oxide traps of high-k dielectrics based on the Metal Oxide Semiconductor (MOS) capacitor structure. The variation of flat-band voltages of the MOS structure was observed and discussed accordingly. Some interesting trapping/detrapping results related to the lanthanide aluminum oxide traps were identified for possible application in Flash memory technology. After understanding the trapping/detrapping mechanism of the high-k oxides, a solid foundation was prepared for further exploration into charge-trapping non-volatile memory in the future. PMID:28788225

High to ultra-high power electrical energy storage.

PubMed

Sherrill, Stefanie A; Banerjee, Parag; Rubloff, Gary W; Lee, Sang Bok

2011-12-14

High power electrical energy storage systems are becoming critical devices for advanced energy storage technology. This is true in part due to their high rate capabilities and moderate energy densities which allow them to capture power efficiently from evanescent, renewable energy sources. High power systems include both electrochemical capacitors and electrostatic capacitors. These devices have fast charging and discharging rates, supplying energy within seconds or less. Recent research has focused on increasing power and energy density of the devices using advanced materials and novel architectural design. An increase in understanding of structure-property relationships in nanomaterials and interfaces and the ability to control nanostructures precisely has led to an immense improvement in the performance characteristics of these devices. In this review, we discuss the recent advances for both electrochemical and electrostatic capacitors as high power electrical energy storage systems, and propose directions and challenges for the future. We asses the opportunities in nanostructure-based high power electrical energy storage devices and include electrochemical and electrostatic capacitors for their potential to open the door to a new regime of power energy.

Reliability Effects of Surge Current Testing of Solid Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2007-01-01

Solid tantalum capacitors are widely used in space applications to filter low-frequency ripple currents in power supply circuits and stabilize DC voltages in the system. Tantalum capacitors manufactured per military specifications (MIL-PRF-55365) are established reliability components and have less than 0.001% of failures per 1000 hours (the failure rate is less than 10 FIT) for grades D or S, thus positioning these parts among electronic components with the highest reliability characteristics. Still, failures of tantalum capacitors do happen and when it occurs it might have catastrophic consequences for the system. This is due to a short-circuit failure mode, which might be damaging to a power supply, and also to the capability of tantalum capacitors with manganese cathodes to self-ignite when a failure occurs in low-impedance applications. During such a failure, a substantial amount of energy is released by exothermic reaction of the tantalum pellet with oxygen generated by the overheated manganese oxide cathode, resulting not only in destruction of the part, but also in damage of the board and surrounding components. A specific feature of tantalum capacitors, compared to ceramic parts, is a relatively large value of capacitance, which in contemporary low-size chip capacitors reaches dozens and hundreds of microfarads. This might result in so-called surge current or turn-on failures in the parts when the board is first powered up. Such a failure, which is considered as the most prevalent type of failures in tantalum capacitors [I], is due to fast changes of the voltage in the circuit, dV/dt, producing high surge current spikes, I(sub sp) = Cx(dV/dt), when current in the circuit is unrestricted. These spikes can reach hundreds of amperes and cause catastrophic failures in the system. The mechanism of surge current failures has not been understood completely yet, and different hypotheses were discussed in relevant literature. These include a sustained scintillation breakdown model [1-3]; electrical oscillations in circuits with a relatively high inductance [4-6]; local overheating of the cathode [5,7, 8]; mechanical damage to tantalum pentoxide dielectric caused by the impact of MnO2 crystals [2,9, 10]; or stress-induced-generation of electron traps caused by electromagnetic forces developed during current spikes [11]. A commonly accepted explanation of the surge current failures is that at unlimited current supply during surge current conditions, the self-healing mechanism in tantalum capacitors does not work, and what would be a minor scintillation spike if the current were limited, becomes a catastrophic failure of the part [l, 12]. However, our data show that the scintillation breakdown voltages are significantly greater that the surge current breakdown voltages, so it is still not clear why the part, which has no scintillations, would fail at the same voltage during surge current testing (SCT).

Evaluation of profile and functionality of memory T cells in pulmonary tuberculosis.

PubMed

Tonaco, Marcela M; Moreira, Jôsimar D; Nunes, Fernanda F C; Loures, Cristina M G; Souza, Larissa R; Martins, Janaina M; Silva, Henrique R; Porto, Arthur Henrique R; Toledo, Vicente Paulo C P; Miranda, Silvana S; Guimarães, Tânia Mara P D

2017-12-01

The cells T CD4+ T and CD8+ can be subdivided into phenotypes naïve, T of central memory, T of effector memory and effector, according to the expression of surface molecules CD45RO and CD27. The T lymphocytes are cells of long life with capacity of rapid expansion and function, after a new antigenic exposure. In tuberculosis, it was found that specific memory T cells are present, however, gaps remain about the role of such cells in the disease immunology. In this study, the phenotypic profile was analyzed and characterized the functionality of CD4+ T lymphocytes and CD8+ T cells of memory and effector, in response to specific stimuli in vitro, in patients with active pulmonary TB, compared to individuals with latent infection with Mycobacterium tuberculosis the ones treated with pulmonary TB. It was observed that the group of patients with active pulmonary tuberculosis was the one which presented the highest proportion of cells T CD4+ of central memory IFN-ɣ+ e TNF-α+, suggesting that in TB, these T of central memory cells would have a profile of protective response, being an important target of study for the development of more effective vaccines; this group also developed lower proportion of CD8+ T effector lymphocytes than the others, a probable cause of specific and less effective response against the bacillus in these individuals; the ones treated for pulmonary tuberculosis were those who developed higher proportion of T CD4+ of memory central IL-17+ cells, indicating that the stimulation of long duration, with high antigenic load, followed by elimination of the pathogen, contribute to more significant generation of such cells; individuals with latent infection by M. tuberculosis and treated for pulmonary tuberculosis, showed greater response of CD8+ T effector lymphocytes IFN-ɣ+ than the controls, suggesting that these cells, as well as CD4+ T lymphocytes, have crucial role of protection against M. tuberculosis. These findings have contributed to a better understanding of the immunologic changes in M. tuberculosis infection and the development of new strategies for diagnosis and prevention of tuberculosis. Copyright © 2017. Published by Elsevier B.V.

Preliminary design for a standard 10 sup 7 bit Solid State Memory (SSM)

NASA Technical Reports Server (NTRS)

Hayes, P. J.; Howle, W. M., Jr.; Stermer, R. L., Jr.

1978-01-01

A modular concept with three separate modules roughly separating bubble domain technology, control logic technology, and power supply technology was employed. These modules were respectively the standard memory module (SMM), the data control unit (DCU), and power supply module (PSM). The storage medium was provided by bubble domain chips organized into memory cells. These cells and the circuitry for parallel data access to the cells make up the SMM. The DCU provides a flexible serial data interface to the SMM. The PSM provides adequate power to enable one DCU and one SMM to operate simultaneously at the maximum data rate. The SSM was designed to handle asynchronous data rates from dc to 1.024 Mbs with a bit error rate less than 1 error in 10 to the eight power bits. Two versions of the SSM, a serial data memory and a dual parallel data memory were specified using the standard modules. The SSM specification includes requirements for radiation hardness, temperature and mechanical environments, dc magnetic field emission and susceptibility, electromagnetic compatibility, and reliability.

Iso-Oriented NaTi2(PO4)3 Mesocrystals as Anode Material for High-Energy and Long-Durability Sodium-Ion Capacitor.

PubMed

Wei, Tongye; Yang, Gongzheng; Wang, Chengxin

2017-09-20

Sodium-ion capacitors (SIC) combine the merits of both high-energy batteries and high-power electrochemical capacitors as well as the low cost and high safety. However, they are also known to suffer from the severe deficiency of suitable electrode materials with high initial Coulombic efficiency (ICE) and kinetic balance between both electrodes. Herein, we report a facile solvothermal synthesis of NaTi 2 (PO 4 ) 3 nanocages constructed by iso-oriented tiny nanocrystals with a mesoporous architecture. It is notable that the NaTi 2 (PO 4 ) 3 mesocrystals exhibit a large ICE of 94%, outstanding rate capability (98 mA h g -1 at 10 C), and long cycling life (over 77% capacity retention after 10 000 cycles) in half cells, all of which are in favor to be utilized into a full cell. When assembled with commercial activated carbon to an SIC, the system delivers an energy density of 56 Wh kg -1 at a power density of 39 W kg -1 . Even at a high current rate of 5 A g -1 (corresponds to finish a full charge/discharge process in 2 min), the SIC still works well after 20 000 cycles without obvious capacity degradation. With the merits of impressive energy/power densities and longevity, the obtained hybrid capacitor should be a promising device for highly efficient energy storage systems.

Continuous operation of an ultra-low-power microcontroller using glucose as the sole energy source.

PubMed

Lee, Inyoung; Sode, Takashi; Loew, Noya; Tsugawa, Wakako; Lowe, Christopher Robin; Sode, Koji

2017-07-15

An ultimate goal for those engaged in research to develop implantable medical devices is to develop mechatronic implantable artificial organs such as artificial pancreas. Such devices would comprise at least a sensor module, an actuator module, and a controller module. For the development of optimal mechatronic implantable artificial organs, these modules should be self-powered and autonomously operated. In this study, we aimed to develop a microcontroller using the BioCapacitor principle. A direct electron transfer type glucose dehydrogenase was immobilized onto mesoporous carbon, and then deposited on the surface of a miniaturized Au electrode (7mm 2 ) to prepare a miniaturized enzyme anode. The enzyme fuel cell was connected with a 100 μF capacitor and a power boost converter as a charge pump. The voltage of the enzyme fuel cell was increased in a stepwise manner by the charge pump from 330mV to 3.1V, and the generated electricity was charged into a 100μF capacitor. The charge pump circuit was connected to an ultra-low-power microcontroller. Thus prepared BioCapacitor based circuit was able to operate an ultra-low-power microcontroller continuously, by running a program for 17h that turned on an LED every 60s. Our success in operating a microcontroller using glucose as the sole energy source indicated the probability of realizing implantable self-powered autonomously operated artificial organs, such as artificial pancreas. Copyright © 2016 Elsevier B.V. All rights reserved.

Solid-state active switch matrix for high energy, moderate power battery systems

DOEpatents

Deal, Larry; Paris, Peter; Ye, Changqing

2016-06-07

A battery management system employs electronic switches and capacitors. No traditional cell-balancing resistors are used. The BMS electronically switches individual cells into and out of a module of cells in order to use the maximum amount of energy available in each cell and to completely charge and discharge each cell without overcharging or under-discharging.

Infantry Communication Data

DTIC Science & Technology

1968-01-01

which forms a conducting medium between the electrodes of a dry cell , storage cell , or electrolytic capacitor. ELECTROMAGNETIC FIELD - A mlagnetic...Dry cel batteries. (2) Vehicular batteries. (3) Hand generators. (4) Gas engine generators. (5) Wet cell batteries. 2-5. NETTING TWO RADIO SETS: To net...1600 meters Power output .. .. .. ..... ..... ..... 5watt Power source. .. .. .. ..... ...... ... dry cell battery flA-270/U Battery lift

Side-gate modulation effects on high-quality BN-Graphene-BN nanoribbon capacitors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yang; Chen, Xiaolong; Ye, Weiguang

High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene have been experimentally realized. The double side-gates can effectively modulate the electronic properties of graphene nanoribbon capacitors. By applying anti-symmetric side-gate voltages, we observed significant upward shifting and flattening of the V-shaped capacitance curve near the charge neutrality point. Symmetric side-gate voltages, however, only resulted in tilted upward shifting along the opposite direction of applied gate voltages. These modulation effects followed the behavior of graphene nanoribbons predicted theoretically for metallic side-gate modulation. The negative quantum capacitance phenomenon predicted by numerical simulations for graphene nanoribbons modulated by graphene side-gates was not observed,more » possibly due to the weakened interactions between the graphene nanoribbon and side-gate electrodes caused by the Ga{sup +} beam etching process.« less

Soliton production with nonlinear homogeneous lines

DOE PAGES

Elizondo-Decanini, Juan M.; Coleman, Phillip D.; Moorman, Matthew W.; ...

2015-11-24

Low- and high-voltage Soliton waves were produced and used to demonstrate collision and compression using diode-based nonlinear transmission lines. Experiments demonstrate soliton addition and compression using homogeneous nonlinear lines. We built the nonlinear lines using commercially available diodes. These diodes are chosen after their capacitance versus voltage dependence is used in a model and the line design characteristics are calculated and simulated. Nonlinear ceramic capacitors are then used to demonstrate high-voltage pulse amplification and compression. The line is designed such that a simple capacitor discharge, input signal, develops soliton trains in as few as 12 stages. We also demonstrated outputmore » voltages in excess of 40 kV using Y5V-based commercial capacitors. The results show some key features that determine efficient production of trains of solitons in the kilovolt range.« less

Restraining for switching effects in an AC driving pixel circuit of the OLED-on-silicon

NASA Astrophysics Data System (ADS)

Liu, Yan-Yan; Geng, Wei-Dong; Dai, Yong-Ping

2010-03-01

The AC driving scheme for OLEDs, which uses the pixel circuit with two transistors and one capacitor (2T1C), can extend the lifetime of the active matrix organic light-emitting diode (AMOLED) on silicon, but there are switching effects during the switch of AC signals, which result in the voltage variation on the storage capacitor and cause the current glitch in OLED. That would decrease the gray scale of the OLED. This paper proposes a novel pixel circuit consisting of three transistors and one capacitor to realize AC driving for the OLED-on-silicon while restraining the switching effects. Simulation results indicate that the proposed circuit is less sensitive to switching effects. Also, another pixel circuit is proposed to further reduce the driving current to meet the current constraints for the OLED-on-silicon.

Fabricating solid carbon porous electrodes from powders

DOEpatents

Kaschmitter, James L.; Tran, Tri D.; Feikert, John H.; Mayer, Steven T.

1997-01-01

Fabrication of conductive solid porous carbon electrodes for use in batteries, double layer capacitors, fuel cells, capacitive dionization, and waste treatment. Electrodes fabricated from low surface area (<50 m.sup.2 /gm) graphite and cokes exhibit excellent reversible lithium intercalation characteristics, making them ideal for use as anodes in high voltage lithium insertion (lithium-ion) batteries. Electrodes having a higher surface area, fabricated from powdered carbon blacks, such as carbon aerogel powder, carbon aerogel microspheres, activated carbons, etc. yield high conductivity carbon compositives with excellent double layer capacity, and can be used in double layer capacitors, or for capacitive deionization and/or waste treatment of liquid streams. By adding metallic catalysts to be high surface area carbons, fuel cell electrodes can be produced.

Fabricating solid carbon porous electrodes from powders

DOEpatents

Kaschmitter, J.L.; Tran, T.D.; Feikert, J.H.; Mayer, S.T.

1997-06-10

Fabrication is described for conductive solid porous carbon electrodes for use in batteries, double layer capacitors, fuel cells, capacitive deionization, and waste treatment. Electrodes fabricated from low surface area (<50 m{sup 2}/gm) graphite and cokes exhibit excellent reversible lithium intercalation characteristics, making them ideal for use as anodes in high voltage lithium insertion (lithium-ion) batteries. Electrodes having a higher surface area, fabricated from powdered carbon blacks, such as carbon aerogel powder, carbon aerogel microspheres, activated carbons, etc. yield high conductivity carbon composites with excellent double layer capacity, and can be used in double layer capacitors, or for capacitive deionization and/or waste treatment of liquid streams. By adding metallic catalysts to high surface area carbons, fuel cell electrodes can be produced. 1 fig.

Cytomegalovirus (CMV) Epitope-Specific CD4+ T Cells Are Inflated in HIV+ CMV+ Subjects.

PubMed

Abana, Chike O; Pilkinton, Mark A; Gaudieri, Silvana; Chopra, Abha; McDonnell, Wyatt J; Wanjalla, Celestine; Barnett, Louise; Gangula, Rama; Hager, Cindy; Jung, Dae K; Engelhardt, Brian G; Jagasia, Madan H; Klenerman, Paul; Phillips, Elizabeth J; Koelle, David M; Kalams, Spyros A; Mallal, Simon A

2017-11-01

Select CMV epitopes drive life-long CD8 + T cell memory inflation, but the extent of CD4 memory inflation is poorly studied. CD4 + T cells specific for human CMV (HCMV) are elevated in HIV + HCMV + subjects. To determine whether HCMV epitope-specific CD4 + T cell memory inflation occurs during HIV infection, we used HLA-DR7 (DRB1*07:01) tetramers loaded with the glycoprotein B DYSNTHSTRYV (DYS) epitope to characterize circulating CD4 + T cells in coinfected HLA-DR7 + long-term nonprogressor HIV subjects with undetectable HCMV plasma viremia. DYS-specific CD4 + T cells were inflated among these HIV + subjects compared with those from an HIV - HCMV + HLA-DR7 + cohort or with HLA-DR7-restricted CD4 + T cells from the HIV-coinfected cohort that were specific for epitopes of HCMV phosphoprotein-65, tetanus toxoid precursor, EBV nuclear Ag 2, or HIV gag protein. Inflated DYS-specific CD4 + T cells consisted of effector memory or effector memory-RA + subsets with restricted TCRβ usage and nearly monoclonal CDR3 containing novel conserved amino acids. Expression of this near-monoclonal TCR in a Jurkat cell-transfection system validated fine DYS specificity. Inflated cells were polyfunctional, not senescent, and displayed high ex vivo levels of granzyme B, CX 3 CR1, CD38, or HLA-DR but less often coexpressed CD38 + and HLA-DR + The inflation mechanism did not involve apoptosis suppression, increased proliferation, or HIV gag cross-reactivity. Instead, the findings suggest that intermittent or chronic expression of epitopes, such as DYS, drive inflation of activated CD4 + T cells that home to endothelial cells and have the potential to mediate cytotoxicity and vascular disease. Copyright © 2017 by The American Association of Immunologists, Inc.

Increased Multilayer Fabrication and RF Characterization of a High-Density Stacked MIM Capacitor Based on Selective Etching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tseng, VFG; Xie, HK

2014-07-01

This paper presents the fabrication and characterization of a high-density multilayer stacked metal-insulator-metal (MIM) capacitor based on a novel process of depositing the MIM multilayer on pillars followed by polishing and selective etching steps to form a stacked capacitor with merely three photolithography steps. In this paper, the pillars were made of glass to prevent substrate loss, whereas an oxide-nitride-oxide dielectric was employed for lower leakage, better voltage/frequency linearity, and better stress compensation. MIM capacitors with six dielectric layers were successfully fabricated, yielding capacitance density of 3.8 fF/mu m(2), maximum capacitance of 2.47 nF, and linear and quadratic voltage coefficientsmore » of capacitance below 21.2 ppm/V and 2.31 ppm/V-2. The impedance was measured from 40 Hz to 3 GHz, and characterized by an analytically derived equivalent circuit model to verify the radio frequency applicability. The multilayer stacking-induced plate resistance mismatch and its effect on the equivalent series resistance (ESR) and effective capacitance was also investigated, which can be counteracted by a corrected metal thickness design. A low ESR of 800 m Omega was achieved, whereas the self-resonance frequency was >760 MHz, successfully demonstrating the feasibility of this method to scale up capacitance densities for high-quality-factor, high-frequency, and large-value MIM capacitors.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Savi, Daniel, E-mail: d.savi@umweltchemie.ch; Kasser, Ueli; Ott, Thomas

Highlights: • We’ve analysed data on the dismantling of electronic and electrical appliances. • Ten years of mass balance data of more than recycling companies have been considered. • Percentages of dismantled batteries, capacitors and PWB have been studied. • Threshold values and benchmarks for batteries and capacitors have been identified. • No benchmark for the dismantling of printed wiring boards should be set. - Abstract: The article compiles and analyses sample data for toxic components removed from waste electronic and electrical equipment (WEEE) from more than 30 recycling companies in Switzerland over the past ten years. According to Europeanmore » and Swiss legislation, toxic components like batteries, capacitors and printed wiring boards have to be removed from WEEE. The control bodies of the Swiss take back schemes have been monitoring the activities of WEEE recyclers in Switzerland for about 15 years. All recyclers have to provide annual mass balance data for every year of operation. From this data, percentage shares of removed batteries and capacitors are calculated in relation to the amount of each respective WEEE category treated. A rationale is developed, why such an indicator should not be calculated for printed wiring boards. The distributions of these de-pollution indicators are analysed and their suitability for defining lower threshold values and benchmarks for the depollution of WEEE is discussed. Recommendations for benchmarks and threshold values for the removal of capacitors and batteries are given.« less

A radially accessible tubular in situ X-ray cell for spatially resolved operando scattering and spectroscopic studies of electrochemical energy storage devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Hao; Allan, Phoebe K.; Borkiewicz, Olaf J.

2016-09-16

A tubularoperandoelectrochemical cell has been developed to allow spatially resolved X-ray scattering and spectroscopic measurements of individual cell components, or regions thereof, during device operation. These measurements are enabled by the tubular cell geometry, wherein the X-ray-transparent tube walls allow radial access for the incident and scattered/transmitted X-ray beam; by probing different depths within the electrode stack, the transformation of different components or regions can be resolved. The cell is compatible with a variety of synchrotron-based scattering, absorption and imaging methodologies. The reliability of the electrochemical cell and the quality of the resulting X-ray scattering and spectroscopic data are demonstratedmore » for two types of energy storage: the evolution of the distribution of the state of charge of an Li-ion battery electrode during cycling is documented using X-ray powder diffraction, and the redistribution of ions between two porous carbon electrodes in an electrochemical double-layer capacitor is documented using X-ray absorption near-edge spectroscopy.« less

Self-Assembled Nanorod Structures on Nanofibers for Textile Electrochemical Capacitor Electrodes with Intrinsic Tactile Sensing Capabilities.

PubMed

Shi, HaoTian H; Khalili, Nazanin; Morrison, Taylor; Naguib, Hani E

2018-05-21

A novel polyaniline nanorod (PAniNR) three-dimensional structure was successfully grown on flexible polyacrylonitrile (PAN) nanofiber substrate as the electrode material for electrochemical capacitors (ECs), constructed via self-stabilized dispersion polymerization process. The electrode offered desired mechanical properties such as flexibility and bendability, whereas it maintained optimal electrochemical characteristics. The electrode and the assembled EC cell also achieved intrinsic piezoresistive sensing properties, leading to real-time monitoring of excess mechanical pressure and bending during cell operations. The PAniNR@PAN electrodes show an average diameter of 173.6 nm, with the PAniNR growth of 50.7 nm in length. Compared to the electrodes made from pristine PAni, the gravimetric capacitance increased by 39.8% to 629.6 F/g with aqueous acidic electrolyte. The electrode and the assembled EC cell with gel electrolyte were responsive to tensile, compressive, and bending stresses with a sensitivity of 0.95 MPa -1 .

Edge-Oriented Graphene on Carbon Nanofiber for High-Frequency Supercapacitors

NASA Astrophysics Data System (ADS)

Islam, Nazifah; Warzywoda, Juliusz; Fan, Zhaoyang

2018-03-01

High-frequency supercapacitors are being studied with the aim to replace the bulky electrolytic capacitors for current ripple filtering and other functions used in power systems. Here, 3D edge-oriented graphene (EOG) was grown encircling carbon nanofiber (CNF) framework to form a highly conductive electrode with a large surface area. Such EOG/CNF electrodes were tested in aqueous and organic electrolytes for high-frequency supercapacitor development. For the aqueous and the organic cell, the characteristic frequency at - 45° phase angle was found to be as high as 22 and 8.5 kHz, respectively. At 120 Hz, the electrode capacitance density was 0.37 and 0.16 mF cm-2 for the two cells. In particular, the 3 V high-frequency organic cell was successfully tested as filtering capacitor used in AC/DC converter, suggesting the promising potential of this technology for compact power supply design and other applications. [Figure not available: see fulltext.

A New Family of Multilevel Grid Connected Inverters Based on Packed U Cell Topology.

PubMed

Pakdel, Majid; Jalilzadeh, Saeid

2017-09-29

In this paper a novel packed U cell (PUC) based multilevel grid connected inverter is proposed. Unlike the U cell arrangement which consists of two power switches and one capacitor, in the proposed converter topology a lower DC power supply from renewable energy resources such as photovoltaic arrays (PV) is used as a base power source. The proposed topology offers higher efficiency and lower cost using a small number of power switches and a lower DC power source which is supplied from renewable energy resources. Other capacitor voltages are extracted from the base lower DC power source using isolated DC-DC power converters. The operation principle of proposed transformerless multilevel grid connected inverter is analyzed theoretically. Operation of the proposed multilevel grid connected inverter is verified through simulation studies. An experimental prototype using STM32F407 discovery controller board is performed to verify the simulation results.

High-Energy-Density Capacitors

NASA Technical Reports Server (NTRS)

Slenes, Kirk

2003-01-01

Capacitors capable of storing energy at high densities are being developed for use in pulse-power circuits in such diverse systems as defibrillators, particle- beam accelerators, microwave sources, and weapons. Like typical previously developed energy-storage capacitors, these capacitors are made from pairs of metal/solid-dielectric laminated sheets that are wound and pressed into compact shapes to fit into cans, which are then filled with dielectric fluids. Indeed, these capacitors can be fabricated largely by conventional fabrication techniques. The main features that distinguish these capacitors from previously developed ones are improvements in (1) the selection of laminate materials, (2) the fabrication of the laminated sheets from these materials, and (3) the selection of dielectric fluids. In simplest terms, a high-performance laminated sheet of the type used in these capacitors is made by casting a dielectric polymer onto a sheet of aluminized kraft paper. The dielectric polymer is a siloxane polymer that has been modified with polar pendant groups to increase its permittivity and dielectric strength. Potentially, this polymer is capable of withstanding an energy density of 7.5 J/cm3, which is four times that of the previous state-of-the-art-capacitor dielectric film material. However, the full potential of this polymer cannot be realized at present because (1) at thicknesses needed for optimum performance (.8.0 m), the mechanical strength of a film of this polymer is insufficient for incorporation into a wound capacitor and (2) at greater thickness, the achievable energy density decreases because of a logarithmic decrease in dielectric strength with increasing thickness. The aluminized kraft paper provides the mechanical strength needed for processing of the laminate and fabrication of the capacitor, and the aluminum film serves as an electrode layer. Because part of the thickness of the dielectric is not occupied by the modified siloxane polymer, the achievable energy density must be somewhat less than the maximum value. The laminate is produced by a continuous film-casting process, using the machinery depicted schematically in the figure. The designs of the process and machinery are dictated partly by the fact that during the processing step prior to casting the polymer, the aluminized kraft paper becomes wet with water. Because the polymer resin to be cast is hydrophobic, the paper must be dried to make it possible to coat the paper uniformly, leaving no pinholes. Accordingly, an infrared heater is placed next to the paper feed roll to dry the paper prior to casting.

High-pressure cell for simultaneous dielectric and neutron spectroscopy.

PubMed

Sanz, Alejandro; Hansen, Henriette Wase; Jakobsen, Bo; Pedersen, Ib H; Capaccioli, Simone; Adrjanowicz, Karolina; Paluch, Marian; Gonthier, Julien; Frick, Bernhard; Lelièvre-Berna, Eddy; Peters, Judith; Niss, Kristine

2018-02-01

In this article, we report on the design, manufacture, and testing of a high-pressure cell for simultaneous dielectric and neutron spectroscopy. This cell is a unique tool for studying dynamics on different time scales, from kilo- to picoseconds, covering universal features such as the α relaxation and fast vibrations at the same time. The cell, constructed in cylindrical geometry, is made of a high-strength aluminum alloy and operates up to 500 MPa in a temperature range between roughly 2 and 320 K. In order to measure the scattered neutron intensity and the sample capacitance simultaneously, a cylindrical capacitor is positioned within the bore of the high-pressure container. The capacitor consists of two concentric electrodes separated by insulating spacers. The performance of this setup has been successfully verified by collecting simultaneous dielectric and neutron spectroscopy data on dipropylene glycol, using both backscattering and time-of-flight instruments. We have carried out the experiments at different combinations of temperature and pressure in both the supercooled liquid and glassy state.

New sample cell configuration for wide-frequency dielectric spectroscopy: DC to radio frequencies.

PubMed

Nakanishi, Masahiro; Sasaki, Yasutaka; Nozaki, Ryusuke

2010-12-01

A new configuration for the sample cell to be used in broadband dielectric spectroscopy is presented. A coaxial structure with a parallel plate capacitor (outward parallel plate cell: OPPC) has made it possible to extend the frequency range significantly in comparison with the frequency range of the conventional configuration. In the proposed configuration, stray inductance is significantly decreased; consequently, the upper bound of the frequency range is improved by two orders of magnitude from the upper limit of conventional parallel plate capacitor (1 MHz). Furthermore, the value of capacitance is kept high by using a parallel plate configuration. Therefore, the precision of the capacitance measurement in the lower frequency range remains sufficiently high. Finally, OPPC can cover a wide frequency range (100 Hz-1 GHz) with an appropriate admittance measuring apparatus such as an impedance or network analyzer. The OPPC and the conventional dielectric cell are compared by examining the frequency dependence of the complex permittivity for several polar liquids and polymeric films.

High-pressure cell for simultaneous dielectric and neutron spectroscopy

NASA Astrophysics Data System (ADS)

Sanz, Alejandro; Hansen, Henriette Wase; Jakobsen, Bo; Pedersen, Ib H.; Capaccioli, Simone; Adrjanowicz, Karolina; Paluch, Marian; Gonthier, Julien; Frick, Bernhard; Lelièvre-Berna, Eddy; Peters, Judith; Niss, Kristine

2018-02-01

In this article, we report on the design, manufacture, and testing of a high-pressure cell for simultaneous dielectric and neutron spectroscopy. This cell is a unique tool for studying dynamics on different time scales, from kilo- to picoseconds, covering universal features such as the α relaxation and fast vibrations at the same time. The cell, constructed in cylindrical geometry, is made of a high-strength aluminum alloy and operates up to 500 MPa in a temperature range between roughly 2 and 320 K. In order to measure the scattered neutron intensity and the sample capacitance simultaneously, a cylindrical capacitor is positioned within the bore of the high-pressure container. The capacitor consists of two concentric electrodes separated by insulating spacers. The performance of this setup has been successfully verified by collecting simultaneous dielectric and neutron spectroscopy data on dipropylene glycol, using both backscattering and time-of-flight instruments. We have carried out the experiments at different combinations of temperature and pressure in both the supercooled liquid and glassy state.

Strategic priming with multiple antigens can yield memory cell phenotypes optimized for infection with Mycobacterium tuberculosis: A computational study

DOE PAGES

Ziraldo, Cordelia; Gong, Chang; Kirschner, Denise E.; ...

2016-01-06

Lack of an effective vaccine results in 9 million new cases of tuberculosis (TB) every year and 1.8 million deaths worldwide. While many infants are vaccinated at birth with BCG (an attenuated M. bovis), this does not prevent infection or development of TB after childhood. Immune responses necessary for prevention of infection or disease are still unknown, making development of effective vaccines against TB challenging. Several new vaccines are ready for human clinical trials, but these trials are difficult and expensive; especially challenging is determining the appropriate cellular response necessary for protection. The magnitude of an immune response is likelymore » key to generating a successful vaccine. Characteristics such as numbers of central memory (CM) and effector memory (EM) T cells responsive to a diverse set of epitopes are also correlated with protection. Promising vaccines against TB contain mycobacterial subunit antigens (Ag) present during both active and latent infection. We hypothesize that protection against different key immunodominant antigens could require a vaccine that produces different levels of EM and CM for each Ag-specific memory population. We created a computational model to explore EM and CM values, and their ratio, within what we term Memory Design Space. Our model captures events involved in T cell priming within lymph nodes and tracks their circulation through blood to peripheral tissues. We used the model to test whether multiple Ag-specific memory cell populations could be generated with distinct locations within Memory Design Space at a specific time point post vaccination. Boosting can further shift memory populations to memory cell ratios unreachable by initial priming events. By strategically varying antigen load, properties of cellular interactions within the LN, and delivery parameters (e.g., number of boosts) of multi-subunit vaccines, we can generate multiple Ag-specific memory populations that cover a wide range of Memory Design Space. As a result, given a set of desired characteristics for Ag-specific memory populations, we can use our model as a tool to predict vaccine formulations that will generate those populations.« less

Strategic priming with multiple antigens can yield memory cell phenotypes optimized for infection with Mycobacterium tuberculosis: A computational study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ziraldo, Cordelia; Gong, Chang; Kirschner, Denise E.

Lack of an effective vaccine results in 9 million new cases of tuberculosis (TB) every year and 1.8 million deaths worldwide. While many infants are vaccinated at birth with BCG (an attenuated M. bovis), this does not prevent infection or development of TB after childhood. Immune responses necessary for prevention of infection or disease are still unknown, making development of effective vaccines against TB challenging. Several new vaccines are ready for human clinical trials, but these trials are difficult and expensive; especially challenging is determining the appropriate cellular response necessary for protection. The magnitude of an immune response is likelymore » key to generating a successful vaccine. Characteristics such as numbers of central memory (CM) and effector memory (EM) T cells responsive to a diverse set of epitopes are also correlated with protection. Promising vaccines against TB contain mycobacterial subunit antigens (Ag) present during both active and latent infection. We hypothesize that protection against different key immunodominant antigens could require a vaccine that produces different levels of EM and CM for each Ag-specific memory population. We created a computational model to explore EM and CM values, and their ratio, within what we term Memory Design Space. Our model captures events involved in T cell priming within lymph nodes and tracks their circulation through blood to peripheral tissues. We used the model to test whether multiple Ag-specific memory cell populations could be generated with distinct locations within Memory Design Space at a specific time point post vaccination. Boosting can further shift memory populations to memory cell ratios unreachable by initial priming events. By strategically varying antigen load, properties of cellular interactions within the LN, and delivery parameters (e.g., number of boosts) of multi-subunit vaccines, we can generate multiple Ag-specific memory populations that cover a wide range of Memory Design Space. As a result, given a set of desired characteristics for Ag-specific memory populations, we can use our model as a tool to predict vaccine formulations that will generate those populations.« less

New generation "nanohybrid supercapacitor".

PubMed

Naoi, Katsuhiko; Naoi, Wako; Aoyagi, Shintaro; Miyamoto, Jun-Ichi; Kamino, Takeo

2013-05-21

To meet growing demands for electric automotive and regenerative energy storage applications, researchers all over the world have sought to increase the energy density of electrochemical capacitors. Hybridizing battery-capacitor electrodes can overcome the energy density limitation of the conventional electrochemical capacitors because they employ both the system of a battery-like (redox) and a capacitor-like (double-layer) electrode, producing a larger working voltage and capacitance. However, to balance such asymmetric systems, the rates for the redox portion must be substantially increased to the levels of double-layer process, which presents a significant challenge. An in situ material processing technology called "ultracentrifuging (UC) treatment" has been used to prepare a novel ultrafast Li4Ti5O12 (LTO) nanocrystal electrode for capacitive energy storage. This Account describes an extremely high-performance supercapacitor that utilizes highly optimized "nano-nano-LTO/carbon composites" prepared via the UC treatment. The UC-treated LTO nanocrystals are grown as either nanosheets or nanoparticles, and both have hyperlinks to two types of nanocarbons: carbon nanofibers and supergrowth (single-walled) carbon nanotubes. The spinel structured LTO has been prepared with two types of hyperdispersed carbons. The UC treatment at 75 000G stoichiometrically accelerates the in situ sol-gel reaction (hydrolysis followed by polycondensation) and further forms, anchors, and grafts the nanoscale LTO precursors onto the carbon matrices. The mechanochemical sol-gel reaction is followed by a short heat-treatment process in vacuo. This immediate treatment with heat is very important for achieving optimal crystallization, inhibiting oxidative decomposition of carbon matrices, and suppressing agglomeration. Such nanocrystal composites can store and deliver energy at the highest rate attained to this date. The charge-discharge profiles indicate a very high sustained capacity of 80 mAh g(-1) at an extremely high rate of 1200 C. Using this ultrafast material, we assembled a hybrid device called a "nanohybrid capacitor" that consists of a Faradaic Li-intercalating LTO electrode and a non-Faradaic AC electrode employing an anion (typically BF4(-)) adsorption-desorption process. The "nanohybrid capacitor" cell has demonstrated remarkable energy, power, and cycleability performance as an electrochemical capacitor electrode. It also exhibits the same ion adsorption-desorption process rates as those of standard activated carbon electrodes in electrochemical capacitors. The new-generation "nanohybrid capacitor" technology produced more than triple the energy density of a conventional electrochemical capacitor. Moreover, the synthetic simplicity of the high-performance nanostructures makes it possible to scale them up for large-volume material production and further applications in many other electrochemical energy storage devices.

Development and characterization of a rechargeable carbon foam electrode containing nickel oxyhydroxide active mass

NASA Astrophysics Data System (ADS)

Chye, Matthew B.

2011-12-01

Batteries and asymmetric electrochemical capacitors using nickel-based positive electrodes can provide high currents due to their defect structure and low internal resistance. Nickel-based positive electrodes, therefore, are ideal for high current applications such as power tools and electric vehicles (EVs). The positive electrodes prepared in this research are monolithic graphitic foams electrochemically impregnated with nickel oxyhydroxide active mass and select additives that enhance electrode performance. Carbon foam is a good current collector due to its light-weight, porous, and graphitic nature, which give its good electrical properties and the ability to be used as a current collector. Replacing sintered nickel current collectors in nickel-based batteries with a low cost, readily available material, carbon foam, can reduce the mass of a rechargeable battery. The goal of this research has been to contribute to fundamental science through better understanding of optimizing the deposition and formation processes of the active mass onto carbon foams as well as investigating the active mass behavior under deposition, formation, and cycling conditions. Flooded cells and a PFA sealed asymmetric capacitor have been used. The effects of carbon foam surface pretreatments and how they affect the active material/carbon foam performance are demonstrated. Also the feasibility of this positive electrode as a component in nickel-based batteries, a Ni-Zn cells and an asymmetric capacitor pouch cell, is demonstrated.

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3.

PubMed

Magyari-Köpe, Blanka; Tendulkar, Mihir; Park, Seong-Geon; Lee, Hyung Dong; Nishi, Yoshio

2011-06-24

Resistance change random access memory (RRAM) cells, typically built as MIM capacitor structures, consist of insulating layers I sandwiched between metal layers M, where the insulator performs the resistance switching operation. These devices can be electrically switched between two or more stable resistance states at a speed of nanoseconds, with long retention times, high switching endurance, low read voltage, and large switching windows. They are attractive candidates for next-generation non-volatile memory, particularly as a flash successor, as the material properties can be scaled to the nanometer regime. Several resistance switching models have been suggested so far for transition metal oxide based devices, such as charge trapping, conductive filament formation, Schottky barrier modulation, and electrochemical migration of point defects. The underlying fundamental principles of the switching mechanism still lack a detailed understanding, i.e. how to control and modulate the electrical characteristics of devices incorporating defects and impurities, such as oxygen vacancies, metal interstitials, hydrogen, and other metallic atoms acting as dopants. In this paper, state of the art ab initio theoretical methods are employed to understand the effects that filamentary types of stable oxygen vacancy configurations in TiO(2) and NiO have on the electronic conduction. It is shown that strong electronic interactions between metal ions adjacent to oxygen vacancy sites results in the formation of a conductive path and thus can explain the 'ON' site conduction in these materials. Implication of hydrogen doping on electroforming is discussed for Pr(0.7)Ca(0.3)MnO(3) devices based on electrical characterization and FTIR measurements.

A High Power Density Single-Phase PWM Rectifier With Active Ripple Energy Storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Ruxi; Wang, Fei; Boroyevich, Dushan

It is well known that single-phase pulse width modulation rectifiers have second-order harmonic currents and corresponding ripple voltages on the dc bus. The low-frequency harmonic current is normally filtered using a bulk capacitor in the bus, which results in low power density. However, pursuing high power density in converter design is a very important goal in the aerospace applications. This paper studies methods for reducing the energy storage capacitor for single-phase rectifiers. The minimum ripple energy storage requirement is derived independently of a specific topology. Based on theminimum ripple energy requirement, the feasibility of the active capacitor s reduction schemesmore » is verified. Then, we propose a bidirectional buck boost converter as the ripple energy storage circuit, which can effectively reduce the energy storage capacitance. The analysis and design are validated by simulation and experimental results.« less

Two new families of high-gain dc-dc power electronic converters for dc-microgrids

NASA Astrophysics Data System (ADS)

Prabhala, Venkata Anand Kishore

Distributing the electric power in dc form is an appealing solution in many applications such as telecommunications, data centers, commercial buildings, and microgrids. A high gain dc-dc power electronic converter can be used to individually link low-voltage elements such as solar panels, fuel cells, and batteries to the dc voltage bus which is usually 400 volts. This way, it is not required to put such elements in a series string to build up their voltages. Consequently, each element can function at it optimal operating point regardless of the other elements in the system. In this dissertation, first a comparative study of dc microgrid architectures and their advantages over their ac counterparts is presented. Voltage level selection of dc distribution systems is discussed from the cost, reliability, efficiency, and safety standpoints. Next, a new family of non-isolated high-voltage-gain dc-dc power electronic converters with unidirectional power flow is introduced. This family of converters benefits from a low voltage stress across its switches. The proposed topologies are versatile as they can be utilized as single-input or double-input power converters. In either case, they draw continuous currents from their sources. Lastly, a bidirectional high-voltage-gain dc-dc power electronic converter is proposed. This converter is comprised of a bidirectional boost converter which feeds a switched-capacitor architecture. The switched-capacitor stage suggested here has several advantages over the existing approaches. For example, it benefits from a higher voltage gain while it uses less number of capacitors. The proposed converters are highly efficient and modular. The operating modes, dc voltage gain, and design procedure for each converter are discussed in details. Hardware prototypes have been developed in the lab. The results obtained from the hardware agree with those of the simulation models.

Spin transport and spin torque in antiferromagnetic devices

DOE PAGES

Zelezny, J.; Wadley, P.; Olejnik, K.; ...

2018-03-02

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, whichmore » could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.« less

Spin transport and spin torque in antiferromagnetic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zelezny, J.; Wadley, P.; Olejnik, K.

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, whichmore » could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.« less

Development of compact rapid charging power supply for capacitive energy storage in pulsed power drivers.

PubMed

Sharma, Surender Kumar; Shyam, Anurag

2015-02-01

High energy capacitor bank is used for primary electrical energy storage in pulsed power drivers. The capacitors used in these pulsed power drivers have low inductance, low internal resistance, and less dc life, so it has to be charged rapidly and immediately discharged into the load. A series resonant converter based 45 kV compact power supply is designed and developed for rapid charging of the capacitor bank with constant charging current up to 150 mA. It is short circuit proof, and zero current switching technique is used to commute the semiconductor switch. A high frequency resonant inverter switching at 10 kHz makes the overall size small and reduces the switching losses. The output current of the power supply is limited by constant on-time and variable frequency switching control technique. The power supply is tested by charging the 45 kV/1.67 μF and 15 kV/356 μF capacitor banks. It has charged the capacitor bank up to rated voltage with maximum charging current of 150 mA and the average charging rate of 3.4 kJ/s. The output current of the power supply is limited by reducing the switching frequency at 5 kHz, 3.3 kHz, and 1.7 kHz and tested with 45 kV/1.67 μF capacitor bank. The protection circuit is included in the power supply for over current, under voltage, and over temperature. The design details and the experimental testing results of the power supply for resonant current, output current, and voltage traces of the power supply with capacitive, resistive, and short circuited load are presented and discussed.

Structures with negative index of refraction

DOEpatents

Soukoulis, Costas M [Ames, IA; Zhou, Jiangfeng [Ames, IA; Koschny, Thomas [Ames, IA; Zhang, Lei [Ames, IA; Tuttle, Gary [Ames, IA

2011-11-08

The invention provides simplified negative index materials (NIMs) using wire-pair structures, 4-gap single ring split-ring resonator (SRR), fishnet structures and overleaf capacitor SRR. In the wire-pair arrangement, a pair of short parallel wires and continuous wires are used. In the 4-gap single-ring SRR, the SRRs are centered on the faces of a cubic unit cell combined with a continuous wire type resonator. Combining both elements creates a frequency band where the metamaterial is transparent with simultaneously negative .di-elect cons. and .mu.. In the fishnet structure, a metallic mesh on both sides of the dielectric spacer is used. The overleaf capacitor SRR changes the gap capacities to small plate capacitors by making the sections of the SRR ring overlap at the gaps separated by a thin dielectric film. This technique is applicable to conventional SRR gaps but it best deploys for the 4-gap single-ring structures.

A novel technique to measure interface trap density in a GaAs MOS capacitor using time-varying magnetic fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choudhury, Aditya N. Roy, E-mail: aditya@physics.iisc.ernet.in; Venkataraman, V.

Interface trap density (D{sub it}) in a GaAs metal-oxide-semiconductor (MOS) capacitor can be measured electrically by measuring its impedance, i.e. by exciting it with a small signal voltage source and measuring the resulting current through the circuit. We propose a new method of measuring D{sub it} where the MOS capacitor is subjected to a (time-varying) magnetic field instead, which produces an effect equivalent to a (time-varying) voltage drop across the sample. This happens because the electron chemical potential of GaAs changes with a change in an externally applied magnetic field (unlike that of the gate metal); this is not themore » voltage induced by Faraday’s law of electromagnetic induction. So, by measuring the current through the MOS, D{sub it} can be found similarly. Energy band diagrams and equivalent circuits of a MOS capacitor are drawn in the presence of a magnetic field, and analyzed. The way in which a magnetic field affects a MOS structure is shown to be fundamentally different compared to an electrical voltage source.« less

In situ determination of the static inductance and resistance of a plasma focus capacitor bank

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saw, S. H.; Institute for Plasma Focus Studies, 32 Oakpark Drive, Chadstone, Victoria 3148; Lee, S.

2010-05-15

The static (unloaded) electrical parameters of a capacitor bank are of utmost importance for the purpose of modeling the system as a whole when the capacitor bank is discharged into its dynamic electromagnetic load. Using a physical short circuit across the electromagnetic load is usually technically difficult and is unnecessary. The discharge can be operated at the highest pressure permissible in order to minimize current sheet motion, thus simulating zero dynamic load, to enable bank parameters, static inductance L{sub 0}, and resistance r{sub 0} to be obtained using lightly damped sinusoid equations given the bank capacitance C{sub 0}. However, formore » a plasma focus, even at the highest permissible pressure it is found that there is significant residual motion, so that the assumption of a zero dynamic load introduces unacceptable errors into the determination of the circuit parameters. To overcome this problem, the Lee model code is used to fit the computed current trace to the measured current waveform. Hence the dynamics is incorporated into the solution and the capacitor bank parameters are computed using the Lee model code, and more accurate static bank parameters are obtained.« less

Design and measurement of fully digital ternary content addressable memory using ratioless static random access memory cells and hierarchical-AND matching comparator

NASA Astrophysics Data System (ADS)

Nishikata, Daisuke; Ali, Mohammad Alimudin Bin Mohd; Hosoda, Kento; Matsumoto, Hiroshi; Nakamura, Kazuyuki

2018-04-01

A 36-bit × 32-entry fully digital ternary content addressable memory (TCAM) using the ratioless static random access memory (RL-SRAM) technology and fully complementary hierarchical-AND matching comparators (HAMCs) was developed. Since its fully complementary and digital operation enables the effect of device variabilities to be avoided, it can operate with a quite low supply voltage. A test chip incorporating a conventional TCAM and a proposed 24-transistor ratioless TCAM (RL-TCAM) cells and HAMCs was developed using a 0.18 µm CMOS process. The minimum operating voltage of 0.25 V of the developed RL-TCAM, which is less than half of that of the conventional TCAM, was measured via the conventional CMOS push–pull output buffers with the level-shifting and flipping technique using optimized pull-up voltage and resistors.

Effect of memory in non-Markovian Boolean networks illustrated with a case study: A cell cycling process

NASA Astrophysics Data System (ADS)

Ebadi, H.; Saeedian, M.; Ausloos, M.; Jafari, G. R.

2016-11-01

The Boolean network is one successful model to investigate discrete complex systems such as the gene interacting phenomenon. The dynamics of a Boolean network, controlled with Boolean functions, is usually considered to be a Markovian (memory-less) process. However, both self-organizing features of biological phenomena and their intelligent nature should raise some doubt about ignoring the history of their time evolution. Here, we extend the Boolean network Markovian approach: we involve the effect of memory on the dynamics. This can be explored by modifying Boolean functions into non-Markovian functions, for example, by investigating the usual non-Markovian threshold function —one of the most applied Boolean functions. By applying the non-Markovian threshold function on the dynamical process of the yeast cell cycle network, we discover a power-law-like memory with a more robust dynamics than the Markovian dynamics.

Pseudocapacitive Sodium Storage in Mesoporous Single-Crystal-like TiO2-Graphene Nanocomposite Enables High-Performance Sodium-Ion Capacitors.

PubMed

Le, Zaiyuan; Liu, Fang; Nie, Ping; Li, Xinru; Liu, Xiaoyan; Bian, Zhenfeng; Chen, Gen; Wu, Hao Bin; Lu, Yunfeng

2017-03-28

Sodium-ion capacitors can potentially combine the virtues of high power capability of conventional electrochemical capacitors and high energy density of batteries. However, the lack of high-performance electrode materials has been the major challenge of sodium-based energy storage devices. In this work, we report a microwave-assisted synthesis of single-crystal-like anatase TiO 2 mesocages anchored on graphene as a sodium storage material. The architecture of the nanocomposite results in pseudocapacitive charge storage behavior with fast kinetics, high reversibility, and negligible degradation to the micro/nanostructure. The nanocomposite delivers a high capacity of 268 mAh g -1 at 0.2 C, which remains 126 mAh g -1 at 10 C for over 18 000 cycles. Coupling with a carbon-based cathode, a full cell of sodium-ion capacitor successfully demonstrates a high energy density of 64.2 Wh kg -1 at 56.3 W kg -1 and 25.8 Wh kg -1 at 1357 W kg -1 , as well as an ultralong lifespan of 10 000 cycles with over 90% of capacity retention.

Pseudocapacitive and hierarchically ordered porous electrode materials supercapacitors

NASA Astrophysics Data System (ADS)

Saruhan, B.; Gönüllü, Y.; Arndt, B.

2013-05-01

Commercially available double layer capacitors store energy in an electrostatic field. This forms in the form of a double layer by charged particles arranged on two electrodes consisting mostly of active carbon. Such double layer capacitors exhibit a low energy density, so that components with large capacity according to large electrode areas are required. Our research focuses on the development of new electrode materials to realize the production of electrical energy storage systems with high energy density and high power density. Metal oxide based electrodes increase the energy density and the capacitance by addition of pseudo capacitance to the static capacitance present by the double layer super-capacitor electrodes. The so-called hybrid asymmetric cell capacitors combine both types of energy storage in a single component. In this work, the production routes followed in our laboratories for synthesis of nano-porous and aligned metal oxide electrodes using the electrochemical and sputter deposition as well as anodization methods will be described. Our characterisation studies concentrate on electrodes having redox metal-oxides (e.g. MnOx and WOx) and hierarchically aligned nano-porous Li-doped TiO2-NTs. The material specific and electrochemical properties achieved with these electrodes will be presented.

Dynamics of the stress-mediated magnetoelectric memory cell N×(TbCo2/FeCo)/PMN-PT

NASA Astrophysics Data System (ADS)

Preobrazhensky, Vladimir; Klimov, Alexey; Tiercelin, Nicolas; Dusch, Yannick; Giordano, Stefano; Churbanov, Anton; Mathurin, Theo; Pernod, Philippe; Sigov, Alexander

2018-08-01

Stress-mediated magnetoelectric heterostructures represent a very promising approach for the realization of ultra-low energy Random Access Memories. The magnetoelectric writing of information has been extensively studied in the past, but it was demonstrated only recently that the magnetoelectric effect can also provide means for reading the stored information. We hereby theoretically study the dynamic behaviour of a magnetoelectric random access memory cell (MELRAM) typically composed of a magnetostrictive multilayer N × (TbCo2 / FeCo) that is elastically coupled with a 〈0 1 1〉 PMN-PT ferroelectric crystal and placed in a Wheatstone bridge-like configuration. The numerical resolution of the LLG and electrodynamics equation system demonstrates high speed write and read operations with an associated extra-low energy consumption. In this model, the reading energy for a 50 nm cell size is estimated to be less than 5 aJ/bit.

Interlesional diversity of T cell receptors in melanoma with immune checkpoints enriched in tissue-resident memory T cells

PubMed Central

Boddupalli, Chandra Sekhar; Bar, Noffar; Kadaveru, Krishna; Krauthammer, Michael; Pornputtapong, Natopol; Ariyan, Stephan; Narayan, Deepak; Kluger, Harriet; Deng, Yanhong; Verma, Rakesh; Das, Rituparna; Bacchiocchi, Antonella; Halaban, Ruth; Sznol, Mario; Dhodapkar, Madhav V.; Dhodapkar, Kavita M.

2016-01-01

Heterogeneity of tumor cells and their microenvironment can affect outcome in cancer. Blockade of immune checkpoints (ICPs) expressed only on a subset of immune cells leads to durable responses in advanced melanoma. Tissue-resident memory T (TRM) cells have recently emerged as a distinct subset of memory T cells in nonlymphoid tissues. Here, we show that functional properties and expression of ICPs within tumor-infiltrating lymphocytes (TILs) differ from those of blood T cells. TILs secrete less IL-2, IFN-γ, and TNF-α compared with circulating counterparts, and expression of VEGF correlated with reduced TIL infiltration. Within tumors, ICPs are particularly enriched within T cells with phenotype and genomic features of TRM cells and the CD16+ subset of myeloid cells. Concurrent T cell receptor (TCR) and tumor exome sequencing of individual metastases in the same patient revealed that interlesional diversity of TCRs exceeded differences in mutation/neoantigen load in tumor cells. These findings suggest that the TRM subset of TILs may be the major target of ICP blockade and illustrate interlesional diversity of tissue-resident TCRs within individual metastases, which did not equilibrate between metastases and may differentially affect the outcome of immune therapy at each site. PMID:28018970

Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Kyungmi; Lee, Kyung-Jin, E-mail: kj-lee@korea.ac.kr; Department of Materials Science and Engineering, Korea University, Seoul 136-713

2015-08-07

We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability factor to switching current. We find that the switching mode of an edge-damaged cell is different from that of an undamaged cell, which results in a sizable reduction in the switching current. Together with a marginal reduction of the thermal stability factor of an edge-damaged cell, this feature makes the STT efficiency large. Our results suggest that a precise edge control is viable formore » the optimization of STT-MRAM.« less

Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors

PubMed Central

Tian, Bo Bo; Liu, Yang; Chen, Liu Fang; Wang, Jian Lu; Sun, Shuo; Shen, Hong; Sun, Jing Lan; Yuan, Guo Liang; Fusil, Stéphane; Garcia, Vincent; Dkhil, Brahim; Meng, Xiang Jian; Chu, Jun Hao

2015-01-01

Resistive switching through electroresistance (ER) effect in metal-ferroelectric-metal (MFM) capacitors has attracted increasing interest due to its potential applications as memories and logic devices. However, the detailed electronic mechanisms resulting in large ER when polarisation switching occurs in the ferroelectric barrier are still not well understood. Here, ER effect up to 1000% at room temperature is demonstrated in C-MOS compatible MFM nanocapacitors with a 8.8 nm-thick poly(vinylidene fluoride) (PVDF) homopolymer ferroelectric, which is very promising for silicon industry integration. Most remarkably, using theory developed for metal-semiconductor rectifying contacts, we derive an analytical expression for the variation of interfacial barrier heights due to space-charge effect that can interpret the observed ER response. We extend this space-charge model, related to the release of trapped charges by defects, to MFM structures made of ferroelectric oxides. This space-charge model provides a simple and straightforward tool to understand recent unusual reports. Finally, this work suggests that defect-engineering could be an original and efficient route for tuning the space-charge effect and thus the ER performances in future electronic devices. PMID:26670138

Electrical Characteristics of WSi2 Nanocrystal Capacitors with Barrier-Engineered High-k Tunnel Layers

NASA Astrophysics Data System (ADS)

Lee, Hyo Jun; Lee, Dong Uk; Kim, Eun Kyu; You, Hee-Wook; Cho, Won-Ju

2011-06-01

Nanocrystal-floating gate capacitors with WSi2 nanocrystals and high-k tunnel layers were fabricated to improve the electrical properties such as retention, programming/erasing speed, and endurance. The WSi2 nanocrystals were distributed uniformly between the tunnel and control gate oxide layers. The electrical performance of the tunnel barrier with the SiO2/HfO2/Al2O3 (2/1/3 nm) (OHA) tunnel layer appeared to be better than that with the Al2O3/HfO2/Al2O3 (2/1/3 nm) (AHA) tunnel layer. When ΔVFB is about 1 V after applying voltage at ±8 V, the programming/erasing speeds of AHA and OHA tunnel layers are 300 ms and 500 µs, respectively. In particular, the device with WSi2 nanocrystals and the OHA tunnel barrier showed a large memory window of about 7.76 V when the voltage swept from 10 to -10 V, and it was maintained at about 2.77 V after 104 cycles.

Integration of perovskite oxide dielectrics into complementary metal-oxide-semiconductor capacitor structures using amorphous TaSiN as oxygen diffusion barrier

NASA Astrophysics Data System (ADS)

Mešić, Biljana; Schroeder, Herbert

2011-09-01

The high permittivity perovskite oxides have been intensively investigated for their possible application as dielectric materials for stacked capacitors in dynamic random access memory circuits. For the integration of such oxide materials into the CMOS world, a conductive diffusion barrier is indispensable. An optimized stack p++-Si/Pt/Ta21Si57N21/Ir was developed and used as the bottom electrode for the oxide dielectric. The amorphous TaSiN film as oxygen diffusion barrier showed excellent conductive properties and a good thermal stability up to 700 °C in oxygen ambient. The additional protective iridium layer improved the surface roughness after annealing. A 100-nm-thick (Ba,Sr)TiO3 film was deposited using pulsed laser deposition at 550 °C, showing very promising properties for application; the maximum relative dielectric constant at zero field is κ ≈ 470, and the leakage current density is below 10-6 A/cm2 for fields lower then ± 200 kV/cm, corresponding to an applied voltage of ± 2 V.

Key concepts behind forming-free resistive switching incorporated with rectifying transport properties

PubMed Central

Shuai, Yao; Ou, Xin; Luo, Wenbo; Mücklich, Arndt; Bürger, Danilo; Zhou, Shengqiang; Wu, Chuangui; Chen, Yuanfu; Zhang, Wanli; Helm, Manfred; Mikolajick, Thomas; Schmidt, Oliver G.; Schmidt, Heidemarie

2013-01-01

This work reports the effect of Ti diffusion on the bipolar resistive switching in Au/BiFeO3/Pt/Ti capacitor-like structures. Polycrystalline BiFeO3 thin films are deposited by pulsed laser deposition at different temperatures on Pt/Ti/SiO2/Si substrates. From the energy filtered transmission electron microscopy and Rutherford backscattering spectrometry it is observed that Ti diffusion occurs if the deposition temperature is above 600°C. The current-voltage (I–V) curves indicate that resistive switching can only be achieved in Au/BiFeO3/Pt/Ti capacitor-like structures where this Ti diffusion occurs. The effect of Ti diffusion is confirmed by the BiFeO3 thin films deposited on Pt/sapphire and Pt/Ti/sapphire substrates. The resistive switching needs no electroforming process, and is incorporated with rectifying properties which is potentially useful to suppress the sneak current in a crossbar architecture. Those specific features open a promising alternative concept for nonvolatile memory devices as well as for other memristive devices like synapses in neuromorphic circuits. PMID:23860408

Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors

NASA Astrophysics Data System (ADS)

Tian, Bo Bo; Liu, Yang; Chen, Liu Fang; Wang, Jian Lu; Sun, Shuo; Shen, Hong; Sun, Jing Lan; Yuan, Guo Liang; Fusil, Stéphane; Garcia, Vincent; Dkhil, Brahim; Meng, Xiang Jian; Chu, Jun Hao

2015-12-01

Resistive switching through electroresistance (ER) effect in metal-ferroelectric-metal (MFM) capacitors has attracted increasing interest due to its potential applications as memories and logic devices. However, the detailed electronic mechanisms resulting in large ER when polarisation switching occurs in the ferroelectric barrier are still not well understood. Here, ER effect up to 1000% at room temperature is demonstrated in C-MOS compatible MFM nanocapacitors with a 8.8 nm-thick poly(vinylidene fluoride) (PVDF) homopolymer ferroelectric, which is very promising for silicon industry integration. Most remarkably, using theory developed for metal-semiconductor rectifying contacts, we derive an analytical expression for the variation of interfacial barrier heights due to space-charge effect that can interpret the observed ER response. We extend this space-charge model, related to the release of trapped charges by defects, to MFM structures made of ferroelectric oxides. This space-charge model provides a simple and straightforward tool to understand recent unusual reports. Finally, this work suggests that defect-engineering could be an original and efficient route for tuning the space-charge effect and thus the ER performances in future electronic devices.

Reticulation of low density shape memory polymer foam with an in vivo demonstration of vascular occlusion

DOE PAGES

Rodriguez, Jennifer N.; Miller, Matthew W.; Boyle, Anthony; ...

2014-08-11

Recently, predominantly closed-cell low density shape memory polymer (SMP) foam was reported to be an effective aneurysm filling device in a porcine model (Rodriguez et al., Journal of Biomedical Materials Research Part A 2013: (http://dx.doi.org/10.1002/jbm.a.34782)). Because healing involves blood clotting and cell migration throughout the foam volume, a more open-cell structure may further enhance the healing response. This research sought to develop a non-destructive reticulation process for this SMP foam to disrupt the membranes between pore cells. Non-destructive mechanical reticulation was achieved using a gravity-driven floating nitinol pin array coupled with vibratory agitation of the foam and supplemental chemical etching.more » Lastly, reticulation resulted in a reduced elastic modulus and increased permeability, but did not impede the shape memory behavior. Reticulated foams were capable of achieving rapid vascular occlusion in an in vivo porcine model.« less

Extended performance solar electric propulsion thrust system study. Volume 5. Capacitor-diode voltage multiplier: Technology evaluation

NASA Technical Reports Server (NTRS)

Martinelli, R. M.

1977-01-01

A 1-kW capacitor-diode voltage multiplier (CDVM) was designed, fabricated and tested to demonstrate the power of feasibility of high power CDVM's and to verify the analytical techniques that had been used to predict the performance characteristics of a 6-kw CDVM. High efficiency (96.2%), a low ratio of component weight to power (0.55 kg/kW), and low output ripple voltage (less than 1%, peak to peak) were obtained during the operation of a 1-kW CDVM various input line, load current, and load fault conditions.

Simultaneous coexpression of memory-related and effector-related genes by individual human CD8 T cells depends on antigen specificity and differentiation.

PubMed

Gupta, Bhawna; Iancu, Emanuela M; Gannon, Philippe O; Wieckowski, Sébastien; Baitsch, Lukas; Speiser, Daniel E; Rufer, Nathalie

2012-07-01

Phenotypic and functional cell properties are usually analyzed at the level of defined cell populations but not single cells. Yet, large differences between individual cells may have important functional consequences. It is likely that T-cell-mediated immunity depends on the polyfunctionality of individual T cells, rather than the sum of functions of responding T-cell subpopulations. We performed highly sensitive single-cell gene expression profiling, allowing the direct ex vivo characterization of individual virus-specific and tumor-specific T cells from healthy donors and melanoma patients. We have previously shown that vaccination with the natural tumor peptide Melan-A-induced T cells with superior effector functions as compared with vaccination with the analog peptide optimized for enhanced HLA-A*0201 binding. Here we found that natural peptide vaccination induced tumor-reactive CD8 T cells with frequent coexpression of both memory/homing-associated genes (CD27, IL7R, EOMES, CXCR3, and CCR5) and effector-related genes (IFNG, KLRD1, PRF1, and GZMB), comparable with protective Epstein-Barr virus-specific and cytomegalovirus-specific T cells. In contrast, memory/homing-associated and effector-associated genes were less frequently coexpressed after vaccination with the analog peptide. Remarkably, these findings reveal a previously unknown level of gene expression diversity among vaccine-specific and virus-specific T cells with the simultaneous coexpression of multiple memory/homing-related and effector-related genes by the same cell. Such broad functional gene expression signatures within antigen-specific T cells may be critical for mounting efficient responses to pathogens or tumors. In summary, direct ex vivo high-resolution molecular characterization of individual T cells provides key insights into the processes shaping the functional properties of tumor-specific and virus-specific T cells.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, J.-J.; Chen, S.-Y.; Environmental Science Division

This report contains data and analyses to support the approval of authorized release limits for the clearance from radiological control of polychlorinated biphenyl (PCB) capacitors in Buildings 361 and 391 at Argonne National Laboratory, Argonne, Illinois. These capacitors contain PCB oil that must be treated and disposed of as hazardous waste under the Toxic Substances Control Act (TSCA). However, they had been located in radiological control areas where the potential for neutron activation existed; therefore, direct release of these capacitors to a commercial facility for PCB treatment and landfill disposal is not allowable unless authorized release has been approved. Radiologicalmore » characterization found no loose contamination on the exterior surface of the PCB capacitors; gamma spectroscopy analysis also showed the radioactivity levels of the capacitors were either at or slightly above ambient background levels. As such, conservative assumptions were used to expedite the analyses conducted to evaluate the potential radiation exposures of workers and the general public resulting from authorized release of the capacitors; for example, the maximum averaged radioactivity levels measured for capacitors nearest to the beam lines were assumed for the entire batch of capacitors. This approach overestimated the total activity of individual radionuclide identified in radiological characterization by a factor ranging from 1.4 to 640. On the basis of this conservative assumption, the capacitors were assumed to be shipped from Argonne to the Clean Harbors facility, located in Deer Park, Texas, for incineration and disposal. The Clean Harbors facility is a state-permitted TSCA facility for treatment and disposal of hazardous materials. At this facility, the capacitors are to be shredded and incinerated with the resulting incineration residue buried in a nearby landfill owned by the company. A variety of receptors that have the potential of receiving radiation exposures were analyzed. Based on the dose assessment results, it is indicated that, if the disposition activities are completed within a year, the maximum individual dose would be about 0.021 mrem/yr, which is about 0.02% of the primary dose limit of 100 mrem/yr set by U.S. Department of Energy (DOE) for members of the public. The maximum individual dose was associated with a conservative and unlikely scenario involving a hypothetical farmer who intruded the landfill area to set up a subsistence living above the disposal area 30 years after burial of the incineration residue. Potential collective dose for worker and the general public combined was estimated to be less than 4 x 10{sup -4} person-rem/yr, about 0.004% of the DOE authorized release objective of 10 person-rem/yr for collective exposure. In reality, the actual radiation doses incurred by workers and the general public are expected to be at least two orders of magnitude lower than the estimated values. To follow the ALARA (as low as reasonably achievable) principle of reducing potential radiation exposures associated with authorized release of the PCB capacitors, a dose constraint of 1 mrem/yr, corresponding to a small fraction of the 25 mrem/yr limit set by DOE, was initially used as a reference to derive the authorized release limits. On the basis of the dose assessment results, the following authorized release limits are proposed - 0.6 pCi/g for Mn-54, 0.6 pCi/g for Na-22, 0.1 pCi/g for Co-57, and 2.3 pCi/g for Co-60, with a corresponding maximum individual dose of 0.21 mrem/yr. This maximum dose, about 0.2% of the DOE primary dose limit of 100 mrem/yr for members of the public from all sources and exposure pathways, was then selected as the final dose constraint for releasing the PCB capacitors through the authorized process. The proposed authorized release limits would satisfy the DOE requirements for the release of non-real properties to a commercial treatment and disposal facility. In addition, due to the relatively short half-lives (< 5.27 years) of radionuclides of concern, there will be no long-term buildup of doses either in groundwater or through other exposure pathways associated with this particular release action. Contact with Clean Harbors and the State of Texas has been initiated. The radioactivity levels in the PCB capacitors meet the State of Texas radiological exemption limits and would be accepted by Clean Harbors, subject to the approval by DOE for the authorized release process. Cost benefit analysis shows that authorized release of the PCB capacitors would provide significant cost saving over the low-level radioactive waste (LLRW) disposition alternative, i.e. sending the PCB capacitors to a certified LLRW facility for treatment and disposal, and would not cause a significantly different impact in terms of human health protection. Therefore, authorized release is determined to be the preferred alternative for the disposition of Argonne PCB capacitors.« less

New Ferroelectric Phase in Atomic-Thick Phosphorene Nanoribbons: Existence of in-Plane Electric Polarization.

PubMed

Hu, Ting; Wu, Haiping; Zeng, Haibo; Deng, Kaiming; Kan, Erjun

2016-12-14

Ferroelectrics have many significant applications in electric devices, such as capacitor or random-access memory, tuning the efficiency of solar cell. Although atomic-thick ferroelectrics are the necessary components for high-density electric devices or nanoscale devices, the development of such materials still faces a big challenge because of the limitation of intrinsic mechanism. Here, we reported that in-plane atomic-thick ferroelectricity can be induced by vertical electric field in phosphorene nanoribbons (PNRs). Through symmetry arguments, we predicted that ferroelectric direction is perpendicular to the direction of external electric field and lies in the plane. Further confirmed by the comprehensive first-principles calculations, we showed that such ferroelectricity is induced by the electron-polarization, which is different from the structural distortion in traditional ferroelectrics and the recent experimental discovery of in-plane atomic-thick ferroelectrics (Science 2016, 353, 274). Moreover, we found that the value of electronic polarization in bilayer is much larger than that in monolayer. Our results show that electron-polarization ferroelectricity maybe the most promising candidate for atomic-thick ferroelectrics.

Carbon nanofibers (CNFs) supported cobalt- nickel sulfide (CoNi2S4) nanoparticles hybrid anode for high performance lithium ion capacitor.

PubMed

Jagadale, Ajay; Zhou, Xuan; Blaisdell, Douglas; Yang, Sen

2018-01-25

Lithium ion capacitors possess an ability to bridge the gap between lithium ion battery and supercapacitor. The main concern of fabricating lithium ion capacitors is poor rate capability and cyclic stability of the anode material which uses sluggish faradaic reactions to store an electric charge. Herein, we have fabricated high performance hybrid anode material based on carbon nanofibers (CNFs) and cobalt-nickel sulfide (CoNi 2 S 4 ) nanoparticles via simple electrospinning and electrodeposition methods. Porous and high conducting CNF@CoNi 2 S 4 electrode acts as an expressway network for electronic and ionic diffusion during charging-discharging processes. The effect of anode to cathode mass ratio on the performance has been studied by fabricating lithium ion capacitors with different mass ratios. The surface controlled contribution of CNF@CoNi 2 S 4 electrode was 73% which demonstrates its excellent rate capability. Lithium ion capacitor fabricated with CNF@CoNi 2 S 4 to AC mass ratio of 1:2.6 showed excellent energy density of 85.4 Wh kg -1 with the power density of 150 W kg -1 . Also, even at the high power density of 15 kW kg -1 , the cell provided the energy density of 35 Wh kg -1 . This work offers a new strategy for designing high-performance hybrid anode with the combination of simple and cost effective approaches.

Influenza-specific T cells from older people are enriched in the late effector subset and their presence inversely correlates with vaccine response.

PubMed

Wagar, Lisa E; Gentleman, Beth; Pircher, Hanspeter; McElhaney, Janet E; Watts, Tania H

2011-01-01

T cells specific for persistent pathogens accumulate with age and express markers of immune senescence. In contrast, much less is known about the state of T cell memory for acutely infecting pathogens. Here we examined T cell responses to influenza in human peripheral blood mononuclear cells from older (>64) and younger (<40) donors using whole virus restimulation with influenza A (A/PR8/34) ex vivo. Although most donors had pre-existing influenza reactive T cells as measured by IFNγ production, older donors had smaller populations of influenza-responsive T cells than young controls and had lost a significant proportion of their CD45RA-negative functional memory population. Despite this apparent dysfunction in a proportion of the older T cells, both old and young donors' T cells from 2008 could respond to A/California/07/2009 ex vivo. For HLA-A2+ donors, MHC tetramer staining showed that a higher proportion of influenza-specific memory CD8 T cells from the 65+ group co-express the markers killer cell lectin-like receptor G1 (KLRG1) and CD57 compared to their younger counterparts. These markers have previously been associated with a late differentiation state or immune senescence. Thus, memory CD8 T cells to an acutely infecting pathogen show signs of advanced differentiation and functional deterioration with age. There was a significant negative correlation between the frequency of KLRG1(+)CD57(+) influenza M1-specific CD8 T cells pre-vaccination and the ability to make antibodies in response to vaccination with seasonal trivalent inactivated vaccine, whereas no such trend was observed when the total CD8(+)KLRG1(+)CD57(+) population was analyzed. These results suggest that the state of the influenza-specific memory CD8 T cells may be a predictive indicator of a vaccine responsive healthy immune system in old age.

The evolving roles of memory immune cells in transplantation

PubMed Central

Chen, Wenhao; Ghobrial, Rafik M.; Li, Xian C.

2015-01-01

Memory cells are the products of immune responses but also exert significant impact on subsequent immunity and immune tolerance, thus placing them in a unique position in transplant research. Memory cells are heterogeneous, including not only memory T cells but also memory B cells and innate memory cells. Memory cells are a critical component of protective immunity against invading pathogens, especially in immunosuppressed patients, but they also mediate graft loss and tolerance resistance. Recent studies suggest that some memory cells unexpectedly act as regulatory cells, promoting rather than hindering transplant survival. This functional diversity makes therapeutic targeting of memory cells a challenging task in transplantation. In this article we highlight recent advances in our understanding of memory cells, focusing on diversity of memory cells and mechanisms involved in their induction and functions. We also provide a broad overview on the challenges and opportunities in targeting memory cells in the induction of transplant tolerance. PMID:26102615

Airway-Resident Memory CD8 T Cells Provide Antigen-Specific Protection against Respiratory Virus Challenge through Rapid IFN-γ Production.

PubMed

McMaster, Sean R; Wilson, Jarad J; Wang, Hong; Kohlmeier, Jacob E

2015-07-01

CD8 airway resident memory T (TRM) cells are a distinctive TRM population with a high turnover rate and a unique phenotype influenced by their localization within the airways. Their role in mediating protective immunity to respiratory pathogens, although suggested by many studies, has not been directly proven. This study provides definitive evidence that airway CD8 TRM cells are sufficient to mediate protection against respiratory virus challenge. Despite being poorly cytolytic in vivo and failing to expand after encountering Ag, airway CD8 TRM cells rapidly express effector cytokines, with IFN-γ being produced most robustly. Notably, established airway CD8 TRM cells possess the ability to produce IFN-γ faster than systemic effector memory CD8 T cells. Furthermore, naive mice receiving intratracheal transfer of airway CD8 TRM cells lacking the ability to produce IFN-γ were less effective at controlling pathogen load upon heterologous challenge. This direct evidence of airway CD8 TRM cell-mediated protection demonstrates the importance of these cells as a first line of defense for optimal immunity against respiratory pathogens and suggests they should be considered in the development of future cell-mediated vaccines. Copyright © 2015 by The American Association of Immunologists, Inc.

Physical and Electrical Characterization of Aluminum Polymer Capacitors

NASA Technical Reports Server (NTRS)

Liu, David (Donghang)

2010-01-01

Conductive polymer aluminum capacitor (PA capacitor) is an evolution of traditional wet electrolyte aluminum capacitors by replacing liquid electrolyte with a solid, highly conductive polymer. On the other hand, the cathode construction in polymer aluminum capacitors with coating of carbon and silver epoxy for terminal connection is more like a combination of the technique that solid tantalum capacitor utilizes. This evolution and combination result in the development of several competing capacitor construction technologies in manufacturing polymer aluminum capacitors. The driving force of this research on characterization of polymer aluminum capacitors is the rapid progress in IC technology. With the microprocessor speeds exceeding a gigahertz and CPU current demands of 80 amps and more, the demand for capacitors with higher peak current and faster repetition rates bring conducting polymer capacitors to the center o( focus. This is because this type of capacitors has been known for its ultra-low ESR and high capacitance. Polymer aluminum capacitors from several manufacturers with various combinations of capacitance, rated voltage, and ESR values were obtained and tested. The construction analysis of the capacitors revealed three different constructions: conventional rolled foil, the multilayer stacking V-shape, and a dual-layer sandwich structure. The capacitor structure and its impact on the electrical characteristics has been revealed and evaluated. A destructive test with massive current over stress to fail the polymer aluminum capacitors reveals that all polymer aluminum capacitors failed in a benign mode without ignition, combustion, or any other catastrophic failures. The extraordinary low ESR (as low as 3 mOMEGA), superior frequency independence reported for polymer aluminum capacitors have been confirmed. For the applications of polymer aluminum capacitors in space programs, a thermal vacuum cycle test was performed. The results, as expected, show no impact on the electrical characteristics of the capacitors. The breakdown voltage of polymer capacitors has been evaluated using a steady step surge test. Initial results show the uniform distribution in the breakdown voltage for polymer aluminum capacitors. Polymer aluminum capacitors with a combination of very high capacitance, extraordinary low ESR, excellent frequency stability, and non-ignite benign failure mode make it a niche fit in space applications for both today and future. Polymer capacitors are apparently also the best substitutes of the currently used MnO2-based tantalum capacitors in the low voltage range. However, some critical aspects are still to be addressed in the next phase of the investigation for PA capacitors. These include the long term reliability test of 125 C dry life and 85 C/85%RH humidity, the failure mechanism and de-rating, the radiation tolerance, and the high temperature performance. All of the above requires the continuous NEPP funding and support.

Factors affecting reconstitution of the T cell compartment in allogeneic haematopoietic cell transplant recipients.

PubMed

Fallen, P R; McGreavey, L; Madrigal, J A; Potter, M; Ethell, M; Prentice, H G; Guimarães, A; Travers, P J

2003-11-01

The factors affecting T cell reconstitution post haematopoietic cell transplantation (HCT) are not well characterised. We carried out a longitudinal analysis of T cell reconstitution in 32 HCT recipients during the first 12 months post transplant. We analysed reconstitution of naïve, memory and effector T cells, their diversity and monitored thymic output using TCR rearrangement excision circles (TRECs). Thymic-independent pathways were responsible for the rapid reconstitution of memory and effector T cells less than 6 months post HCT. Thymic-dependent pathways were activated between 6 and 12 months in the majority of patients with naïve T cell numbers increasing in parallel with TREC levels. Increasing patient age, chronic GVHD and T cell depletion (with or without pretransplant Campath-1H) predicted low TREC levels and slow naïve T cell recovery. Furthermore, increasing patient age also predicted high memory and effector T cell numbers. The effects of post HCT immunosuppression, total body irradiation, donor leucocyte infusions, T cell dose and post HCT infections on T cell recovery were also analysed. However, no effects of these single variables across a variety of different age, GVHD and T cell depletion groups were apparent. This study suggests that future analysis of the factors affecting T cell reconstitution and studies aimed at reactivating the thymus through therapeutic intervention should be analysed in age-, GVHD- and TCD-matched patient groups.

Optimization of Design Parameters and Operating Conditions of Electrochemical Capacitors for High Energy and Power Performance

NASA Astrophysics Data System (ADS)

Ike, Innocent S.; Sigalas, Iakovos; Iyuke, Sunny E.

2017-03-01

Theoretical expressions for performance parameters of different electrochemical capacitors (ECs) have been optimized by solving them using MATLAB scripts as well as via the MATLAB R2014a optimization toolbox. The performance of the different kinds of ECs under given conditions was compared using theoretical equations and simulations of various models based on the conditions of device components, using optimal values for the coefficient associated with the battery-kind material ( K BMopt) and the constant associated with the electrolyte material ( K Eopt), as well as our symmetric electric double-layer capacitor (EDLC) experimental data. Estimation of performance parameters was possible based on values for the mass ratio of electrodes, operating potential range ratio, and specific capacitance of electrolyte. The performance of asymmetric ECs with suitable electrode mass and operating potential range ratios using aqueous or organic electrolyte at appropriate operating potential range and specific capacitance was 2.2 and 5.56 times greater, respectively, than for the symmetric EDLC and asymmetric EC using the same aqueous electrolyte, respectively. This enhancement was accompanied by reduced cell mass and volume. Also, the storable and deliverable energies of the asymmetric EC with suitable electrode mass and operating potential range ratios using the proper organic electrolyte were 12.9 times greater than those of the symmetric EDLC using aqueous electrolyte, again with reduced cell mass and volume. The storable energy, energy density, and power density of the asymmetric EDLC with suitable electrode mass and operating potential range ratios using the proper organic electrolyte were 5.56 times higher than for a similar symmetric EDLC using aqueous electrolyte, with cell mass and volume reduced by a factor of 1.77. Also, the asymmetric EDLC with the same type of electrode and suitable electrode mass ratio, working potential range ratio, and proper organic electrolyte showed enhanced performance compared with the conventional symmetric EDLC using aqueous electrolyte, with reduced cell mass and volume. These results can obviously reduce the number of experiments required to determine the optimum manufacturing design for ECs and also demonstrate that use of an asymmetric electrode and organic electrolyte was very successful for improving the performance of the EC, with reduced cell mass and volume. These results can also act as guidelines for design, fabrication, and operation of electrochemical capacitors with outstanding storable energy, energy density, and power density.

Survival of tissue-resident memory T cells requires exogenous lipid uptake and metabolism

PubMed Central

Pan, Youdong; Tian, Tian; Park, Chang Ook; Lofftus, Serena Y.; Mei, Shenglin; Liu, Xing; Luo, Chi; O’Malley, John T.; Gehad, Ahmed; Teague, Jessica E.; Divito, Sherrie J.; Fuhlbrigge, Robert; Puigserver, Pere; Krueger, James G.; Hotamisligil, Gökhan S.; Clark, Rachael A.; Kupper, Thomas S.

2017-01-01

Tissue-resident memory T (TRM) cells persist indefinitely in epithelial barrier tissues and protect the host against pathogens1–4. However, the biological pathways that enable the long-term survival of TRM cells are obscure4,5. Here we show that mouse CD8+ TRM cells generated by viral infection of the skin differentially express high levels of several molecules that mediate lipid uptake and intracellular transport, including fatty-acid-binding proteins 4 and 5 (FABP4 and FABP5). We further show that T-cell-specific deficiency of Fabp4 and Fabp5 (Fabp4/Fabp5) impairs exogenous free fatty acid (FFA) uptake by CD8+ TRM cells and greatly reduces their long-term survival in vivo, while having no effect on the survival of central memory T (TCM) cells in lymph nodes. In vitro, CD8+ TRM cells, but not CD8+ TCM, demonstrated increased mitochondrial oxidative metabolism in the presence of exogenous FFAs; this increase was not seen in Fabp4/Fabp5 double-knockout CD8+ TRM cells. The persistence of CD8+ TRM cells in the skin was strongly diminished by inhibition of mitochondrial FFA β-oxidation in vivo. Moreover, skin CD8+ TRM cells that lacked Fabp4/Fabp5 were less effective at protecting mice from cutaneous viral infection, and lung Fabp4/Fabp5 double-knockout CD8+ TRM cells generated by skin vaccinia virus (VACV) infection were less effective at protecting mice from a lethal pulmonary challenge with VACV. Consistent with the mouse data, increased FABP4 and FABP5 expression and enhanced extracellular FFA uptake were also demonstrated in human CD8+ TRM cells in normal and psoriatic skin. These results suggest that FABP4 and FABP5 have a critical role in the maintenance, longevity and function of CD8+ TRM cells, and suggest that CD8+ TRM cells use exogenous FFAs and their oxidative metabolism to persist in tissue and to mediate protective immunity. PMID:28219080

An Investigation of Quantum Dot Super Lattice Use in Nonvolatile Memory and Transistors

NASA Astrophysics Data System (ADS)

Mirdha, P.; Parthasarathy, B.; Kondo, J.; Chan, P.-Y.; Heller, E.; Jain, F. C.

2018-02-01

Site-specific self-assembled colloidal quantum dots (QDs) will deposit in two layers only on p-type substrate to form a QD superlattice (QDSL). The QDSL structure has been integrated into the floating gate of a nonvolatile memory component and has demonstrated promising results in multi-bit storage, ease of fabrication, and memory retention. Additionally, multi-valued logic devices and circuits have been created by using QDSL structures which demonstrated ternary and quaternary logic. With increasing use of site-specific self-assembled QDSLs, fundamental understanding of silicon and germanium QDSL charge storage capability, self-assembly on specific surfaces, uniform distribution, and mini-band formation has to be understood for successful implementation in devices. In this work, we investigate the differences in electron charge storage by building metal-oxide semiconductor (MOS) capacitors and using capacitance and voltage measurements to quantify the storage capabilities. The self-assembly process and distribution density of the QDSL is done by obtaining atomic force microscopy (AFM) results on line samples. Additionally, we present a summary of the theoretical density of states in each of the QDSLs.

Establishment of anti-tumor memory in humans using in vitro-educated CD8+ T cells

PubMed Central

Butler, Marcus O.; Friedlander, Philip; Milstein, Matthew I.; Mooney, Mary M.; Metzler, Genita; Murray, Andrew P.; Tanaka, Makito; Berezovskaya, Alla; Imataki, Osamu; Drury, Linda; Brennan, Lisa; Flavin, Marisa; Neuberg, Donna; Stevenson, Kristen; Lawrence, Donald; Hodi, F. Stephen; Velazquez, Elsa F.; Jaklitsch, Michael T.; Russell, Sara E.; Mihm, Martin; Nadler, Lee M.; Hirano, Naoto

2013-01-01

While advanced stage melanoma patients have a median survival of less than a year, adoptive T cell therapy can induce durable clinical responses in some patients. Successful adoptive T cell therapy to treat cancer requires engraftment of anti-tumor T lymphocytes that not only retain specificity and function in vivo but also display an intrinsic capacity to survive. To date, adoptively transferred anti-tumor CD8+ T lymphocytes (CTL) have had limited life spans unless the host has been manipulated. To generate CTL that possess an intrinsic capacity to persist in vivo, we developed a human artificial antigen presenting cell system that can educate anti-tumor CTL to acquire both a central memory and effector memory phenotype as well as the capacity to survive in culture for prolonged periods of time. In the present report, we examined whether anti-tumor CTL generated using this system could function and persist in patients. Here, we showed that MART1-specific CTL, educated and expanded using our artificial antigen presenting cell system, could survive for prolonged periods in advanced stage melanoma patients without previous conditioning or cytokine treatment. Moreover, these CTL trafficked to the tumor, mediated biological and clinical responses, and established anti-tumor immunologic memory. Therefore, this approach may broaden the availability of adoptive cell therapy to patients both alone and in combination with other therapeutic modalities. PMID:21525398

Overview of emerging nonvolatile memory technologies

PubMed Central

2014-01-01

Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new class of memory technologies and scaling of scientific procedures based on an investigation of recent progress in advanced Flash memory devices. PMID:25278820

Overview of emerging nonvolatile memory technologies.

PubMed

Meena, Jagan Singh; Sze, Simon Min; Chand, Umesh; Tseng, Tseung-Yuen

2014-01-01

Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new class of memory technologies and scaling of scientific procedures based on an investigation of recent progress in advanced Flash memory devices.

Ferroelectric polarization induces electric double layer bistability in electrolyte-gated field-effect transistors.

PubMed

Fabiano, Simone; Crispin, Xavier; Berggren, Magnus

2014-01-08

The dense surface charges expressed by a ferroelectric polymeric thin film induce ion displacement within a polyelectrolyte layer and vice versa. This is because the density of dipoles along the surface of the ferroelectric thin film and its polarization switching time matches that of the (Helmholtz) electric double layers formed at the ferroelectric/polyelectrolyte and polyelectrolyte/semiconductor interfaces. This combination of materials allows for introducing hysteresis effects in the capacitance of an electric double layer capacitor. The latter is advantageously used to control the charge accumulation in the semiconductor channel of an organic field-effect transistor. The resulting memory transistors can be written at a gate voltage of around 7 V and read out at a drain voltage as low as 50 mV. The technological implication of this large difference between write and read-out voltages lies in the non-destructive reading of this ferroelectric memory.

Effect of atomic layer deposition temperature on current conduction in Al{sub 2}O{sub 3} films formed using H{sub 2}O oxidant

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hiraiwa, Atsushi, E-mail: hiraiwa@aoni.waseda.jp, E-mail: qs4a-hriw@asahi-net.or.jp; Matsumura, Daisuke; Kawarada, Hiroshi, E-mail: kawarada@waseda.jp

To develop high-performance, high-reliability gate insulation and surface passivation technologies for wide-bandgap semiconductor devices, the effect of atomic layer deposition (ALD) temperature on current conduction in Al{sub 2}O{sub 3} films is investigated based on the recently proposed space-charge-controlled field emission model. Leakage current measurement shows that Al{sub 2}O{sub 3} metal-insulator-semiconductor capacitors formed on the Si substrates underperform thermally grown SiO{sub 2} capacitors at the same average field. However, using equivalent oxide field as a more practical measure, the Al{sub 2}O{sub 3} capacitors are found to outperform the SiO{sub 2} capacitors in the cases where the capacitors are negatively biased andmore » the gate material is adequately selected to reduce virtual dipoles at the gate/Al{sub 2}O{sub 3} interface. The Al{sub 2}O{sub 3} electron affinity increases with the increasing ALD temperature, but the gate-side virtual dipoles are not affected. Therefore, the leakage current of negatively biased Al{sub 2}O{sub 3} capacitors is approximately independent of the ALD temperature because of the compensation of the opposite effects of increased electron affinity and permittivity in Al{sub 2}O{sub 3}. By contrast, the substrate-side sheet of charge increases with increasing ALD temperature above 210 °C and hence enhances the current of positively biased Al{sub 2}O{sub 3} capacitors more significantly at high temperatures. Additionally, an anomalous oscillatory shift of the current-voltage characteristics with ALD temperature was observed in positively biased capacitors formed by low-temperature (≤210 °C) ALD. This shift is caused by dipoles at the Al{sub 2}O{sub 3}/underlying SiO{sub 2} interface. Although they have a minimal positive-bias leakage current, the low-temperature-grown Al{sub 2}O{sub 3} films cause the so-called blisters problem when heated above 400 °C. Therefore, because of the absence of blistering, a 450 °C ALD process is presently the most promising technology for growing high-reliability Al{sub 2}O{sub 3} films.« less

CD4 memory T cells develop and acquire functional competence by sequential cognate interactions and stepwise gene regulation

PubMed Central

Kaji, Tomohiro; Hijikata, Atsushi; Ishige, Akiko; Kitami, Toshimori; Watanabe, Takashi; Ohara, Osamu; Yanaka, Noriyuki; Okada, Mariko; Shimoda, Michiko; Taniguchi, Masaru

2016-01-01

Memory CD4+ T cells promote protective humoral immunity; however, how memory T cells acquire this activity remains unclear. This study demonstrates that CD4+ T cells develop into antigen-specific memory T cells that can promote the terminal differentiation of memory B cells far more effectively than their naive T-cell counterparts. Memory T cell development requires the transcription factor B-cell lymphoma 6 (Bcl6), which is known to direct T-follicular helper (Tfh) cell differentiation. However, unlike Tfh cells, memory T cell development did not require germinal center B cells. Curiously, memory T cells that develop in the absence of cognate B cells cannot promote memory B-cell recall responses and this defect was accompanied by down-regulation of genes associated with homeostasis and activation and up-regulation of genes inhibitory for T-cell responses. Although memory T cells display phenotypic and genetic signatures distinct from Tfh cells, both had in common the expression of a group of genes associated with metabolic pathways. This gene expression profile was not shared to any great extent with naive T cells and was not influenced by the absence of cognate B cells during memory T cell development. These results suggest that memory T cell development is programmed by stepwise expression of gatekeeper genes through serial interactions with different types of antigen-presenting cells, first licensing the memory lineage pathway and subsequently facilitating the functional development of memory T cells. Finally, we identified Gdpd3 as a candidate genetic marker for memory T cells. PMID:26714588

The plasma membrane as a capacitor for energy and metabolism.

PubMed

Ray, Supriyo; Kassan, Adam; Busija, Anna R; Rangamani, Padmini; Patel, Hemal H

2016-02-01

When considering which components of the cell are the most critical to function and physiology, we naturally focus on the nucleus, the mitochondria that regulate energy and apoptotic signaling, or other organelles such as the endoplasmic reticulum, Golgi, ribosomes, etc. Few people will suggest that the membrane is the most critical element of a cell in terms of function and physiology. Those that consider the membrane critical will point to its obvious barrier function regulated by the lipid bilayer and numerous ion channels that regulate homeostatic gradients. What becomes evident upon closer inspection is that not all membranes are created equal and that there are lipid-rich microdomains that serve as platforms of signaling and a means of communication with the intracellular environment. In this review, we explore the evolution of membranes, focus on lipid-rich microdomains, and advance the novel concept that membranes serve as "capacitors for energy and metabolism." Within this framework, the membrane then is the primary and critical regulator of stress and disease adaptation of the cell.

Infant-mortality testing of high-energy-density capacitors used on Nova

DOE Office of Scientific and Technical Information (OSTI.GOV)

Merritt, B.T.; Whitham, K.

1983-01-01

Nova is a solid-state large laser for inertial-confinement fusion research. Its flashlamps are driven by a 60-MJ capacitor bank. Part of this bank is being built with high-energy-density capacitors, 52-..mu..F, 22 kV, 12.5 kJ. A total of 2645 of these capacitors have been purchased from two manufacturers. Each capacitor was infant-mortality tested. The first test consisted of a high-potential test, bushing-to-case, since these capacitors have dual bushings. Then the capacitors were discharged 500 times with circuit conditions approximating the capacitors normal flashlamp load. Failure of either of these tests or if the capacitor was leaking was cause for rejection.

Enhanced expression of PD-1 and other activation markers by CD4+ T cells of young but not old patients with metastatic melanoma.

PubMed

van den Brom, Rob R H; van der Geest, Kornelis S M; Brouwer, Elisabeth; Hospers, Geke A P; Boots, Annemieke M H

2018-06-01

The biological behavior of melanoma is unfavorable in the elderly when compared to young subjects. We hypothesized that differences in T-cell responses might underlie the distinct behavior of melanoma in young and old melanoma patients. Therefore, we investigated the circulating T-cell compartment of 34 patients with metastatic melanoma and 42 controls, which were classified as either young or old. Absolute numbers of CD4+ T cells were decreased in young and old melanoma patients when compared to the age-matched control groups. Percentages of naive and memory CD4+ T cells were not different when comparing old melanoma patients to age-matched controls. Percentages of memory CD4+ T cells tended to be increased in young melanoma patients compared to young controls. Proportions of naive CD4+ T cells were lower in young patients than in age-matched controls, and actually comparable to those in old patients and controls. This was accompanied with increased percentages of memory CD4+ T cells expressing HLA-DR, Ki-67, and PD-1 in young melanoma patients in comparison to the age-matched controls, but not in old patients. Proportions of CD45RA-FOXP3 high memory regulatory T cells were increased in young and old melanoma patients when compared to their age-matched controls, whereas those of CD45RA+FOXP3 low naive regulatory T cells were similar. We observed no clear modulation of the circulating CD8+ T-cell repertoire in melanoma patients. In conclusion, we show that CD4+ T cells of young melanoma patients show signs of activation, whereas these signs are less clear in CD4+ T cells of old patients.

Interconnected subsets of memory follicular helper T cells have different effector functions.

PubMed

Asrir, Assia; Aloulou, Meryem; Gador, Mylène; Pérals, Corine; Fazilleau, Nicolas

2017-10-10

Follicular helper T cells regulate high-affinity antibody production. Memory follicular helper T cells can be local in draining lymphoid organs and circulate in the blood, but the underlying mechanisms of this subdivision are unresolved. Here we show that both memory follicular helper T subsets sustain B-cell responses after reactivation. Local cells promote more plasma cell differentiation, whereas circulating cells promote more secondary germinal centers. In parallel, local memory B cells are homogeneous and programmed to become plasma cells, whereas circulating memory B cells are able to rediversify. Local memory follicular helper T cells have higher affinity T-cell receptors, which correlates with expression of peptide MHC-II at the surface of local memory B cells only. Blocking T-cell receptor-peptide MHC-II interactions induces the release of local memory follicular helper T cells in the circulating compartment. Our studies show that memory follicular helper T localization is highly intertwined with memory B cells, a finding that has important implications for vaccine design.Tfh cells can differentiate into memory cells. Here the authors describe distinct functional and phenotypic profiles of these memory Tfh cells dependent on their anatomical localization to the lymphoid organs or to the circulation.

Theoretical study of ferroelectric nanoparticles using phase reconstructed electron microscopy

NASA Astrophysics Data System (ADS)

Phatak, C.; Petford-Long, A. K.; Beleggia, M.; De Graef, M.

2014-06-01

Ferroelectric nanostructures are important for a variety of applications in electronic and electro-optical devices, including nonvolatile memories and thin-film capacitors. These applications involve stability and switching of polarization using external stimuli, such as electric fields. We present a theoretical model describing how the shape of a nanoparticle affects its polarization in the absence of screening charges, and quantify the electron-optical phase shift for detecting ferroelectric signals with phase-sensitive techniques in a transmission electron microscope. We provide an example phase shift computation for a uniformly polarized prolate ellipsoid with varying aspect ratio in the absence of screening charges.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Juhee; Lee, Sungpyo; Lee, Moo Hyung

Quasi-unipolar non-volatile organic transistor memory (NOTM) can combine the best characteristics of conventional unipolar and ambipolar NOTMs and, as a result, exhibit improved device performance. Unipolar NOTMs typically exhibit a large signal ratio between the programmed and erased current signals but also require a large voltage to program and erase the memory cells. Meanwhile, an ambipolar NOTM can be programmed and erased at lower voltages, but the resulting signal ratio is small. By embedding a discontinuous n-type fullerene layer within a p-type pentacene film, quasi-unipolar NOTMs are fabricated, of which the signal storage utilizes both electrons and holes while themore » electrical signal relies on only hole conduction. These devices exhibit superior memory performance relative to both pristine unipolar pentacene devices and ambipolar fullerene/pentacene bilayer devices. The quasi-unipolar NOTM exhibited a larger signal ratio between the programmed and erased states while also reducing the voltage required to program and erase a memory cell. This simple approach should be readily applicable for various combinations of advanced organic semiconductors that have been recently developed and thereby should make a significant impact on organic memory research.« less

Multi-color flow cytometry for evaluating age-related changes in memory lymphocyte subsets in dogs.

PubMed

Withers, Sita S; Moore, Peter F; Chang, Hong; Choi, Jin W; McSorley, Stephen J; Kent, Michael S; Monjazeb, Arta M; Canter, Robert J; Murphy, William J; Sparger, Ellen E; Rebhun, Robert B

2018-05-31

While dogs are increasingly being utilized as large-animal models of disease, important features of age-related immunosenescence in the dog have yet to be evaluated due to the lack of defined naïve vs. memory T lymphocyte phenotypes. We therefore performed multi-color flow cytometry on peripheral blood mononuclear cells from young and aged beagles, and determined the differential cytokine production by proposed memory subsets. CD4+ and CD8+ T lymphocytes in aged dogs displayed increased cytokine production, and decreased proliferative capacity. Antibodies targeting CD45RA and CD62L, but less so CD28 or CD44, defined canine cells that consistently exhibited properties of naïve-, central memory-, effector memory-, and terminal effector-like CD4+ and CD8+ T lymphocyte subsets. Older dogs demonstrated decreased frequencies of naïve-like CD4+ and CD8+ T lymphocytes, and an increased frequency of terminal effector-like CD8+ T lymphocytes. Overall findings revealed that aged dogs displayed features of immunosenescence similar to those reported in other species. Copyright © 2018 Elsevier Ltd. All rights reserved.

Effect of Surge Current Testing on Reliability of Solid Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2008-01-01

Tantalum capacitors manufactured per military specifications are established reliability components and have less than 0.001% of failures per 1000 hours for grades D or S, thus positioning these parts among electronic components with the highest reliability characteristics. Still, failures of tantalum capacitors do happen and when it occurs it might have catastrophic consequences for the system. To reduce this risk, further development of a screening and qualification system with special attention to the possible deficiencies in the existing procedures is necessary. The purpose of this work is evaluation of the effect of surge current stress testing on reliability of the parts at both steady-state and multiple surge current stress conditions. In order to reveal possible degradation and precipitate more failures, various part types were tested and stressed in the range of voltage and temperature conditions exceeding the specified limits. A model to estimate the probability of post-surge current testing-screening failures and measures to improve the effectiveness of the screening process has been suggested.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Bao; Liu, Wen-Jun; Wei, Lei

Excellent voltage linearity of metal-insulator-metal (MIM) capacitors is highly required for next generation radio frequency integration circuits. In this work, employing atomic layer deposition technique, we demonstrated how the voltage linearity of MIM capacitors was modulated by adding different thickness of SiO{sub 2} layer to the nano-stack of Al{sub 2}O{sub 3}/ZrO{sub 2}. It was found that the quadratic voltage coefficient of capacitance (α) can be effectively reduced from 1279 to −75 ppm/V{sup 2} with increasing the thickness of SiO{sub 2} from zero to 4 nm, which is more powerful than increasing the thickness of ZrO{sub 2} in the Al{sub 2}O{sub 3}/ZrO{sub 2}more » stack. This is attributed to counteraction between the positive α for Al{sub 2}O{sub 3}/ZrO{sub 2} and the negative one for SiO{sub 2} in the MIM capacitors with Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} stacks. Interestingly, voltage-polarity dependent conduction behaviors in the MIM capacitors were observed. For electron bottom-injection, the addition of SiO{sub 2} obviously suppressed the leakage current; however, it abnormally increased the leakage current for electron top-injection. These are ascribed to the co-existence of shallow and deep traps in ZrO{sub 2}, and the former is in favor of the field-assisted tunnelling conduction and the latter contributes to the trap-assisted tunnelling process. The above findings will be beneficial to device design and process optimization for high performance MIM capacitors.« less

The Impact of Sex Work Interruption on Blood-Derived T Cells in Sex Workers from Nairobi, Kenya.

PubMed

Omollo, Kenneth; Boily-Larouche, Geneviève; Lajoie, Julie; Kimani, Makobu; Cheruiyot, Julianna; Kimani, Joshua; Oyugi, Julius; Fowke, Keith Raymond

Unprotected sexual intercourse exposes the female genital tract (FGT) to semen-derived antigens, which leads to a proinflammatory response. Studies have shown that this postcoital inflammatory response can lead to recruitment of activated T cells to the FGT, thereby increasing risk of HIV infection. The purpose of this study was to evaluate the impact of sex work on activation and memory phenotypes of peripheral T cells among female sex workers (FSW) from Nairobi, Kenya. Thirty FSW were recruited from the Pumwani Sex Workers Cohort, 10 in each of the following groups: HIV-exposed seronegative (at least 7 years in active sex work), HIV positive, and New Negative (HIV negative, less than 3 years in active sex work). Blood was obtained at three different phases (active sex work, abstinence from sex work-sex break, and following resumption of sex work). Peripheral blood mononuclear cells were isolated and stained for phenotypic markers (CD3, CD4, CD8, and CD161), memory phenotype markers (CD45RA and CCR7), activation markers (CD69, HLA-DR, and CD95), and the HIV coreceptor (CCR5). T-cell populations were compared between groups. In HIV-positive women, CD8+CCR5+ T cells declined at the sex break period, while CD4+CD161+ T cells increased when returning to sex work. All groups showed no significant changes in systemic T-cell activation markers following the interruption of sex work, however, significant reductions in naive CD8+ T cells were noted. For each of the study points, HIV positives had higher effector memory and CD8+CD95+ T cells and lower naive CD8+ T cells than the HIV-uninfected groups. Interruption of sex work had subtle effects on systemic T-cell memory phenotypes.

Compositionally Graded Multilayer Ceramic Capacitors

DOE PAGES

Song, Hyun-Cheol; Zhou, Jie E.; Maurya, Deepam; ...

2017-09-27

Multilayer ceramic capacitors (MLCC) are widely used in consumer electronics. In this paper, we provide a transformative method for achieving high dielectric response and tunability over a wide temperature range through design of compositionally graded multilayer (CGML) architecture. Compositionally graded MLCCs were found to exhibit enhanced dielectric tunability (70%) along with small dielectric losses (<2.5%) over the required temperature ranges specified in the standard industrial classifications. The compositional grading resulted in generation of internal bias field which enhanced the tunability due to increased nonlinearity. The electric field tunability of MLCCs provides an important avenue for design of miniature filters andmore » power converters.« less

Wireless power transmission for battery charging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mi, Chris; Li, Siqi; Nguyen, Trong-Duy

A wireless power transmission system is provided for high power applications. The power transmission system is comprised generally of a charging unit configured to generate an alternating electromagnetic field and a receive unit configured to receive the alternating electromagnetic field from the charging unit. The charging unit includes a power source; an input rectifier; an inverter; and a transmit coil. The transmit coil has a spirangle arrangement segmented into n coil segments with capacitors interconnecting adjacent coil segments. The receive unit includes a receive coil and an output rectifier. The receive coil also has a spirangle arrangement segmented into mmore » coil segments with capacitors interconnecting adjacent coil segments.« less

Failure Modes in Capacitors When Tested Under a Time-Varying Stress

NASA Technical Reports Server (NTRS)

Liu, David (Donhang)

2011-01-01

Power-on failure has been the prevalent failure mechanism for solid tantalum capacitors in decoupling applications. A surge step stress test (SSST) has been previously applied to identify the critical stress level of a capacitor batch to give some predictability to the power-on failure mechanism [1]. But SSST can also be viewed as an electrically destructive test under a time-varying stress (voltage). It consists of rapidly charging the capacitor with incremental voltage increases, through a low resistance in series, until the capacitor under test is electrically shorted. When the reliability of capacitors is evaluated, a highly accelerated life test (HALT) is usually adopted since it is a time-efficient method of determining the failure mechanism; however, a destructive test under a time-varying stress such as SSST is even more time efficient. It usually takes days or weeks to complete a HALT test, but it only takes minutes for a time-varying stress test to produce failures. The advantage of incorporating a specific time-varying stress profile into a statistical model is significant in providing an alternative life test method for quickly revealing the failure mechanism in capacitors. In this paper, a time-varying stress that mimics a typical SSST has been incorporated into the Weibull model to characterize the failure mechanism in different types of capacitors. The SSST circuit and transient conditions for correctly surge testing capacitors are discussed. Finally, the SSST was applied for testing Ta capacitors, polymer aluminum capacitors (PA capacitors), and multi-layer ceramic (MLC) capacitors with both precious metal electrodes (PME) and base metal electrodes (BME). The test results are found to be directly associated with the dielectric layer breakdown in Ta and PA capacitors and are independent of the capacitor values, the way the capacitors were built, and the capacitors manufacturers. The test results also show that MLC capacitors exhibit surge breakdown voltages much higher than the rated voltage and that the breakdown field is inversely proportional to the dielectric layer thickness. The SSST data can also be used to comparatively evaluate the voltage robustness of capacitors for decoupling applications.

Design of aqueous redox-enhanced electrochemical capacitors with high specific energies and slow self-discharge.

PubMed

Chun, Sang-Eun; Evanko, Brian; Wang, Xingfeng; Vonlanthen, David; Ji, Xiulei; Stucky, Galen D; Boettcher, Shannon W

2015-08-04

Electrochemical double-layer capacitors exhibit high power and long cycle life but have low specific energy compared with batteries, limiting applications. Redox-enhanced capacitors increase specific energy by using redox-active electrolytes that are oxidized at the positive electrode and reduced at the negative electrode during charging. Here we report characteristics of several redox electrolytes to illustrate operational/self-discharge mechanisms and the design rules for high performance. We discover a methyl viologen (MV)/bromide electrolyte that delivers a high specific energy of ∼14 Wh kg(-1) based on the mass of electrodes and electrolyte, without the use of an ion-selective membrane separator. Substituting heptyl viologen for MV increases stability, with no degradation over 20,000 cycles. Self-discharge is low, due to adsorption of the redox couples in the charged state to the activated carbon, and comparable to cells with inert electrolyte. An electrochemical model reproduces experiments and predicts that 30-50 Wh kg(-1) is possible with optimization.

Design of aqueous redox-enhanced electrochemical capacitors with high specific energies and slow self-discharge

PubMed Central

Chun, Sang-Eun; Evanko, Brian; Wang, Xingfeng; Vonlanthen, David; Ji, Xiulei; Stucky, Galen D.; Boettcher, Shannon W.

2015-01-01

Electrochemical double-layer capacitors exhibit high power and long cycle life but have low specific energy compared with batteries, limiting applications. Redox-enhanced capacitors increase specific energy by using redox-active electrolytes that are oxidized at the positive electrode and reduced at the negative electrode during charging. Here we report characteristics of several redox electrolytes to illustrate operational/self-discharge mechanisms and the design rules for high performance. We discover a methyl viologen (MV)/bromide electrolyte that delivers a high specific energy of ∼14 Wh kg−1 based on the mass of electrodes and electrolyte, without the use of an ion-selective membrane separator. Substituting heptyl viologen for MV increases stability, with no degradation over 20,000 cycles. Self-discharge is low, due to adsorption of the redox couples in the charged state to the activated carbon, and comparable to cells with inert electrolyte. An electrochemical model reproduces experiments and predicts that 30–50 Wh kg−1 is possible with optimization. PMID:26239891

Phenotypic and Functional Characterization of Herpes Simplex Virus Glycoprotein B Epitope-Specific Effector and Memory CD8+ T Cells from Symptomatic and Asymptomatic Individuals with Ocular Herpes

PubMed Central

Khan, Arif A.; Srivastava, Ruchi; Spencer, Doran; Garg, Sumit; Fremgen, Daniel; Vahed, Hawa; Lopes, Patricia P.; Pham, Thanh T.; Hewett, Charlie; Kuang, Jasmine; Ong, Nicolas; Huang, Lei; Scarfone, Vanessa M.; Nesburn, Anthony B.

2015-01-01

ABSTRACT Herpes simplex virus 1 (HSV-1) glycoprotein B (gB)-specific CD8+ T cells protect mice from herpes infection and disease. However, whether and which HSV-1 gB-specific CD8+ T cells play a key role in the “natural” protection seen in HSV-1-seropositive healthy asymptomatic (ASYMP) individuals (who have never had clinical herpes disease) remain to be determined. In this study, we have dissected the phenotypes and the functions of HSV-1 gB-specific CD8+ T cells from HLA-A*02:01 positive, HSV-1 seropositive ASYMP and symptomatic (SYMP) individuals (with a history of numerous episodes of recurrent ocular herpes disease). We found the following. (i) Healthy ASYMP individuals maintained a significantly higher proportion of differentiated HSV-1 gB-specific effector memory CD8+ T cells (TEM cells) (CD45RAlow CCR7low CD44high CD62Llow). In contrast, SYMP patients had frequent less-differentiated central memory CD8+ T cells (TCM cells) (CD45RAlow CCR7high CD44low CD62Lhigh). (ii) ASYMP individuals had significantly higher proportions of multifunctional effector CD8+ T cells which responded mainly to gB342–350 and gB561–569 “ASYMP” epitopes, and simultaneously produced IFN-γ, CD107a/b, granzyme B, and perforin. In contrast, effector CD8+ T cells from SYMP individuals were mostly monofunctional and were directed mainly against nonoverlapping gB17–25 and gB183–191 “SYMP” epitopes. (iii) Immunization of an HLA-A*02:01 transgenic mouse model of ocular herpes with “ASYMP” CD8+ TEM cell epitopes, but not with “SYMP” CD8+ TCM cell epitopes, induced a strong CD8+ T cell-dependent protective immunity against ocular herpes infection and disease. Our findings provide insights into the role of HSV-specific CD8+ TEM cells in protection against herpes and should be considered in the development of an effective vaccine. IMPORTANCE A significantly higher proportion of differentiated and multifunctional HSV-1 gB-specific effector memory CD8+ T cells (TEM cells) (CD45RAlow CCR7low CD44high CD62Llow) were found in healthy ASYMP individuals who are seropositive for HSV-1 but never had any recurrent herpetic disease, while there were frequent less-differentiated and monofunctional central memory CD8+ T cells (TCM cells) (CD45RAlow CCR7high CD44low CD62Lhigh) in SYMP patients. Immunization with “ASYMP” CD8+ TEM cell epitopes, but not with “SYMP” CD8+ TCM cell epitopes, induced a strong protective HSV-specific CD8+ T cell response in HLA-A*02:01 transgenic mice. These findings are important for the development of a safe and effective T cell-based herpes vaccine. PMID:25609800

T inflammatory memory CD8 T cells participate to antiviral response and generate secondary memory cells with an advantage in XCL1 production.

PubMed

Jubin, Virginie; Ventre, Erwan; Leverrier, Yann; Djebali, Sophia; Mayol, Katia; Tomkowiak, Martine; Mafille, Julien; Teixeira, Marie; Teoh, Denise Y-L; Lina, Bruno; Walzer, Thierry; Arpin, Christophe; Marvel, Jacqueline

2012-06-01

Besides the classically described subsets of memory CD8 T cells generated under infectious conditions, are T inflammatory memory cells generated under sterile priming conditions, such as sensitization to allergens. Although not fully differentiated as pathogen-induced memory cells, they display memory properties that distinguish them from naive CD8 T cells. Given these memory cells are generated in an antigen-specific context that is devoid of pathogen-derived danger signals and CD4 T cell help, we herein questioned whether they maintained their activation and differentiation potential, could be recruited in an immune response directed against a pathogen expressing their cognate antigen and further differentiate in fully competent secondary memory cells. We show that T inflammatory memory cells can indeed take part to the immune response triggered by a viral infection, differentiate into secondary effectors and further generate typical central memory CD8 T cells and effector memory CD8 T cells. Furthermore, the secondary memory cells they generate display a functional advantage over primary memory cells in their capacity to produce TNF-α and the XCL1 chemokine. These results suggest that cross-reactive stimulations and differentiation of cells directed against allergens or self into fully competent pathogen-induced memory cells might have incidences in inflammatory immuno-pathologies.

Investigation of Hafnium oxide/Copper resistive memory for advanced encryption applications

NASA Astrophysics Data System (ADS)

Briggs, Benjamin D.

The Advanced Encryption Standard (AES) is a widely used encryption algorithm to protect data and communications in today's digital age. Modern AES CMOS implementations require large amounts of dedicated logic and must be tuned for either performance or power consumption. A high throughput, low power, and low die area AES implementation is required in the growing mobile sector. An emerging non-volatile memory device known as resistive memory (ReRAM) is a simple metal-insulator-metal capacitor device structure with the ability to switch between two stable resistance states. Currently, ReRAM is targeted as a non-volatile memory replacement technology to eventually replace flash. Its advantages over flash include ease of fabrication, speed, and lower power consumption. In addition to memory, ReRAM can also be used in advanced logic implementations given its purely resistive behavior. The combination of a new non-volatile memory element ReRAM along with high performance, low power CMOS opens new avenues for logic implementations. This dissertation will cover the design and process implementation of a ReRAM-CMOS hybrid circuit, built using IBM's 10LPe process, for the improvement of hardware AES implementations. Further the device characteristics of ReRAM, specifically the HfO2/Cu memory system, and mechanisms for operation are not fully correlated. Of particular interest to this work is the role of material properties such as the stoichiometry, crystallinity, and doping of the HfO2 layer and their effect on the switching characteristics of resistive memory. Material properties were varied by a combination of atomic layer deposition and reactive sputtering of the HfO2 layer. Several studies will be discussed on how the above mentioned material properties influence switching parameters, and change the underlying physics of device operation.

Charging a capacitor from an external fluctuating potential using a single conical nanopore.

PubMed

Gomez, Vicente; Ramirez, Patricio; Cervera, Javier; Nasir, Saima; Ali, Mubarak; Ensinger, Wolfgang; Mafe, Salvador

2015-04-01

We explore the electrical rectification of large amplitude fluctuating signals by an asymmetric nanostructure operating in aqueous solution. We show experimentally and theoretically that a load capacitor can be charged to voltages close to 1 V within a few minutes by converting zero time-average potentials of amplitudes in the range 0.5-3 V into average net currents using a single conical nanopore. This process suggests that significant energy conversion and storage from an electrically fluctuating environment is feasible with a nanoscale pore immersed in a liquid electrolyte solution, a system characteristic of bioelectronics interfaces, electrochemical cells, and nanoporous membranes.

Charging a Capacitor from an External Fluctuating Potential using a Single Conical Nanopore

PubMed Central

Gomez, Vicente; Ramirez, Patricio; Cervera, Javier; Nasir, Saima; Ali, Mubarak; Ensinger, Wolfgang; Mafe, Salvador

2015-01-01

We explore the electrical rectification of large amplitude fluctuating signals by an asymmetric nanostructure operating in aqueous solution. We show experimentally and theoretically that a load capacitor can be charged to voltages close to 1 V within a few minutes by converting zero time-average potentials of amplitudes in the range 0.5–3 V into average net currents using a single conical nanopore. This process suggests that significant energy conversion and storage from an electrically fluctuating environment is feasible with a nanoscale pore immersed in a liquid electrolyte solution, a system characteristic of bioelectronics interfaces, electrochemical cells, and nanoporous membranes. PMID:25830563

Preparation of the Lentinus edodes-based porous biomass carbon by hydrothermal method for capacitive desalination

NASA Astrophysics Data System (ADS)

Yan, Junbin; Zhang, Hexuan; Xie, Zhengzheng; Liu, Jianyun

2017-08-01

Biomass carbon materials were prepared by hydrothermal method using Lentinus edodes, followed by activation by ZnCl2 at high carbonization temperature. SEM and contact angle test show that ZnCl2 has a significant effect on the surface morphology and properties of porous carbon materials. Using the porous carbon as electrodes of the capacitor, the specific capacitance of the porous carbon material was found to be 247.6 F/g. The desalination amount of porous carbon material in capacitor cell was 12.9 mg/g, being the 1.9 times of that of the commercial activated carbon.

Rapamycin-treated human endothelial cells preferentially activate allogeneic regulatory T cells

PubMed Central

Wang, Chen; Yi, Tai; Qin, Lingfeng; Maldonado, Roberto A.; von Andrian, Ulrich H.; Kulkarni, Sanjay; Tellides, George; Pober, Jordan S.

2013-01-01

Human graft endothelial cells (ECs) can act as antigen-presenting cells to initiate allograft rejection by host memory T cells. Rapamycin, an mTOR inhibitor used clinically to suppress T cell responses, also acts on DCs, rendering them tolerogenic. Here, we report the effects of rapamycin on EC alloimmunogenicity. Compared with mock-treated cells, rapamycin-pretreated human ECs (rapa-ECs) stimulated less proliferation and cytokine secretion from allogeneic CD4+ memory cells, an effect mimicked by shRNA knockdown of mTOR or raptor in ECs. The effects of rapamycin persisted for several days and were linked to upregulation of the inhibitory molecules PD-L1 and PD-L2 on rapa-ECs. Additionally, rapa-ECs produced lower levels of the inflammatory cytokine IL-6. CD4+ memory cells activated by allogeneic rapa-ECs became hyporesponsive to restimulation in an alloantigen-specific manner and contained higher percentages of suppressive CD4+CD25hiCD127loFoxP3+ cells that did not produce effector cytokines. In a human-mouse chimeric model of allograft rejection, rapamycin pretreatment of human arterial allografts increased graft EC expression of PD-L1 and PD-L2 and reduced subsequent infiltration of allogeneic effector T cells into the artery intima and intimal expansion. Preoperative conditioning of allograft ECs with rapamycin could potentially reduce immune-mediated rejection. PMID:23478407

Failure Modes in Capacitors When Tested Under a Time-Varying Stress

NASA Technical Reports Server (NTRS)

Liu, David (Donhang)

2011-01-01

Steady step surge testing (SSST) is widely applied to screen out potential power-on failures in solid tantalum capacitors. The test simulates the power supply's on and off characteristics. Power-on failure has been the prevalent failure mechanism for solid tantalum capacitors for decoupling applications. On the other hand, the SSST can also be reviewed as an electrically destructive test under a time-varying stress. It consists of rapidly charging the capacitor with incremental voltage increases, through a low resistance in series, until the capacitor under test is electrically shorted. Highly accelerated life testing (HALT) is usually a time-efficient method for determining the failure mechanism in capacitors; however, a destructive test under a time-varying stress like SSST is even more effective. It normally takes days to complete a HALT test, but it only takes minutes for a time-varying stress test to produce failures. The advantage of incorporating specific time-varying stress into a statistical model is significant in providing an alternative life test method for quickly revealing the failure modes in capacitors. In this paper, a time-varying stress has been incorporated into the Weibull model to characterize the failure modes. The SSST circuit and transient conditions to correctly test the capacitors is discussed. Finally, the SSST was applied for testing polymer aluminum capacitors (PA capacitors), Ta capacitors, and multi-layer ceramic capacitors with both precious metal electrode (PME) and base-metal-electrodes (BME). It appears that testing results are directly associated to the dielectric layer breakdown in PA and Ta capacitors and are independent on the capacitor values, the way the capacitors being built, and the manufactures. The testing results also reveal that ceramic capacitors exhibit breakdown voltages more than 20 times the rated voltage, and the breakdown voltages are inverse proportional to the dielectric layer thickness. The possibility of ceramic capacitors in front-end decoupling applications to block the surge noise from a power supply is also discussed.

Proximal Versus Distal Splenic Artery Embolisation for Blunt Splenic Trauma: What is the Impact on Splenic Immune Function?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Foley, P. T., E-mail: pfoley@doctors.org.uk; Kavnoudias, H., E-mail: h.kavnoudias@alfred.org.au; Cameron, P. U., E-mail: paul.cameron@unimelb.edu.au

PurposeTo compare the impact of proximal or distal splenic artery embolisation versus that of splenectomy on splenic immune function as measured by IgM memory B cell levels.Materials and MethodsPatients with splenic trauma who were treated by splenic artery embolisation (SAE) were enrolled. After 6 months splenic volume was assessed by CT, and IgM memory B cells in peripheral blood were measured and compared to a local normal reference population and to a post-splenectomy population.ResultsOf the 71 patients who underwent embolisation, 38 underwent proximal embolisation, 11 underwent distal embolisation, 22 patients were excluded, 1 had both proximal and distal embolisation, 5 didmore » not survive and 16 did not return for evaluation. There was a significant difference between splenectomy and proximal or distal embolisation and a trend towards greater preservation of IgM memory B cell number in those with distal embolisation—a difference that could not be attributed to differences in age, grade of injury or residual splenic volume.ConclusionIgM memory B cell levels are significantly higher in those treated with SAE compared to splenectomy. Our data provide evidence that splenic embolisation should reduce immunological complications of spleen trauma and suggest that distal embolisation may maintain better function.« less

Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application

NASA Astrophysics Data System (ADS)

Chen, Ying-Chen; Lin, Chih-Yang; Huang, Hui-Chun; Kim, Sungjun; Fowler, Burt; Chang, Yao-Feng; Wu, Xiaohan; Xu, Gaobo; Chang, Ting-Chang; Lee, Jack C.

2018-02-01

Sneak path current is a severe hindrance for the application of high-density resistive random-access memory (RRAM) array designs. In this work, we demonstrate nonlinear (NL) resistive switching characteristics of a HfO x /SiO x -based stacking structure as a realization for selector-less RRAM devices. The NL characteristic was obtained and designed by optimizing the internal filament location with a low effective dielectric constant in the HfO x /SiO x structure. The stacking HfO x /SiO x -based RRAM device as the one-resistor-only memory cell is applicable without needing an additional selector device to solve the sneak path issue with a switching voltage of ~1 V, which is desirable for low-power operating in built-in nonlinearity crossbar array configurations.

Memory. Engram cells retain memory under retrograde amnesia.

PubMed

Ryan, Tomás J; Roy, Dheeraj S; Pignatelli, Michele; Arons, Autumn; Tonegawa, Susumu

2015-05-29

Memory consolidation is the process by which a newly formed and unstable memory transforms into a stable long-term memory. It is unknown whether the process of memory consolidation occurs exclusively through the stabilization of memory engrams. By using learning-dependent cell labeling, we identified an increase of synaptic strength and dendritic spine density specifically in consolidated memory engram cells. Although these properties are lacking in engram cells under protein synthesis inhibitor-induced amnesia, direct optogenetic activation of these cells results in memory retrieval, and this correlates with retained engram cell-specific connectivity. We propose that a specific pattern of connectivity of engram cells may be crucial for memory information storage and that strengthened synapses in these cells critically contribute to the memory retrieval process. Copyright © 2015, American Association for the Advancement of Science.

Capacitors.

ERIC Educational Resources Information Center

Trotter, Donald M., Jr.

1988-01-01

Presents a historical backdrop for a discussion of capacitor design and function. Discusses the production, importance, and function of two types of miniature capacitors; electrolytic and multilayer ceramic capacitors. Describes the function of these miniature capacitors in comparison to the Leyden jar, a basic demonstration of capacitance. (CW)

Mechanical memory

DOEpatents

Gilkey, Jeffrey C [Albuquerque, NM; Duesterhaus, Michelle A [Albuquerque, NM; Peter, Frank J [Albuquerque, NM; Renn, Rosemarie A [Alburquerque, NM; Baker, Michael S [Albuquerque, NM

2006-08-15

A first-in-first-out (FIFO) microelectromechanical memory apparatus (also termed a mechanical memory) is disclosed. The mechanical memory utilizes a plurality of memory cells, with each memory cell having a beam which can be bowed in either of two directions of curvature to indicate two different logic states for that memory cell. The memory cells can be arranged around a wheel which operates as a clocking actuator to serially shift data from one memory cell to the next. The mechanical memory can be formed using conventional surface micromachining, and can be formed as either a nonvolatile memory or as a volatile memory.

Mechanical memory

DOEpatents

Gilkey, Jeffrey C [Albuquerque, NM; Duesterhaus, Michelle A [Albuquerque, NM; Peter, Frank J [Albuquerque, NM; Renn, Rosemarie A [Albuquerque, NM; Baker, Michael S [Albuquerque, NM

2006-05-16

A first-in-first-out (FIFO) microelectromechanical memory apparatus (also termed a mechanical memory) is disclosed. The mechanical memory utilizes a plurality of memory cells, with each memory cell having a beam which can be bowed in either of two directions of curvature to indicate two different logic states for that memory cell. The memory cells can be arranged around a wheel which operates as a clocking actuator to serially shift data from one memory cell to the next. The mechanical memory can be formed using conventional surface micromachining, and can be formed as either a nonvolatile memory or as a volatile memory.

A pulsed magnetic stress applied to Drosophila melanogaster flies

NASA Astrophysics Data System (ADS)

Delle Side, D.; Bozzetti, M. P.; Friscini, A.; Giuffreda, E.; Nassisi, V.; Specchia, V.; Velardi, L.

2014-04-01

We report the development of a system to feed pulsed magnetic stress to biological samples. The device is based on a RLC circuit that transforms the energy stored in a high voltage capacitor into a magnetic field inside a coil. The field has been characterized and we found that charging the capacitor with 24 kV results in a peak field of 0.4 T. In order to test its effect, we applied such a stress to the Drosophila melanogaster model and we examined its bio-effects. We analysed, in the germ cells, the effects on the control of specific DNA repetitive sequences that are activated after different environmental stresses. The deregulation of these sequences causes genomic instability and chromosomes breaks leading to sterility. The magnetic field treatment did not produce effects on repetitive sequences in the germ cells of Drosophila. Hence, this field doesn't produce deleterious effects linked to repetitive sequences derepression.

Integrated Micro-scale Power Conversion

DTIC Science & Technology

2012-08-01

Micro Power Converters (μPC) Loads: Sources: μ-Power Converter (μPC) Thin-film battery Solar Cell Micro- fuel Cell Vibration Harvester...passive size • Hybrid integration with MEMS passives, particularly inductors Hybrid integration ARL focus Bubble Size = Volume [mm3] Industry Focus...Power converters survey Compiled by Bedair, Bashirullah Switched inductor (SI) Switched capacitor (SC) Resonant Resonat piezo Hybrid - SI / SC

A Power-Efficient Wireless Capacitor Charging System Through an Inductive Link

PubMed Central

Lee, Hyung-Min; Ghovanloo, Maysam

2014-01-01

A power-efficient wireless capacitor charging system for inductively powered applications has been presented. A bank of capacitors can be directly charged from an ac source by generating a current through a series charge injection capacitor and a capacitor charger circuit. The fixed charging current reduces energy loss in switches, while maximizing the charging efficiency. An adaptive capacitor tuner compensates for the resonant capacitance variations during charging to keep the amplitude of the ac input voltage at its peak. We have fabricated the capacitor charging system prototype in a 0.35-μm 4-metal 2-poly standard CMOS process in 2.1 mm2 of chip area. It can charge four pairs of capacitors sequentially. While receiving 2.7-V peak ac input through a 2-MHz inductive link, the capacitor charging system can charge each pair of 1 μF capacitors up to ±2 V in 420 μs, achieving a high measured charging efficiency of 82%. PMID:24678284

A Power-Efficient Wireless Capacitor Charging System Through an Inductive Link.

PubMed

Lee, Hyung-Min; Ghovanloo, Maysam

2013-10-01

A power-efficient wireless capacitor charging system for inductively powered applications has been presented. A bank of capacitors can be directly charged from an ac source by generating a current through a series charge injection capacitor and a capacitor charger circuit. The fixed charging current reduces energy loss in switches, while maximizing the charging efficiency. An adaptive capacitor tuner compensates for the resonant capacitance variations during charging to keep the amplitude of the ac input voltage at its peak. We have fabricated the capacitor charging system prototype in a 0.35- μ m 4-metal 2-poly standard CMOS process in 2.1 mm 2 of chip area. It can charge four pairs of capacitors sequentially. While receiving 2.7-V peak ac input through a 2-MHz inductive link, the capacitor charging system can charge each pair of 1 μ F capacitors up to ±2 V in 420 μ s, achieving a high measured charging efficiency of 82%.

Chatting in the face of the eyewitness: The impact of extraneous cell-phone conversation on memory for a perpetrator.

PubMed

Marsh, John E; Patel, Krupali; Labonté, Katherine; Threadgold, Emma; Skelton, Faye C; Fodarella, Cristina; Thorley, Rachel; Battersby, Kirsty L; Frowd, Charlie D; Ball, Linden J; Vachon, François

2017-09-01

Cell-phone conversation is ubiquitous within public spaces. The current study investigates whether ignored cell-phone conversation impairs eyewitness memory for a perpetrator. Participants viewed a video of a staged crime in the presence of 1 side of a comprehensible cell-phone conversation (meaningful halfalogue), 2 sides of a comprehensible cell-phone conversation (meaningful dialogue), 1 side of an incomprehensible cell-phone conversation (meaningless halfalogue), or quiet. Between 24 and 28 hr later, participants freely described the perpetrator's face, constructed a single composite image of the perpetrator from memory, and attempted to identify the perpetrator from a sequential lineup. Further, participants rated the likeness of the composites to the perpetrator. Face recall and lineup identification were impaired when participants witnessed the staged crime in the presence of a meaningful halfalogue compared to a meaningless halfalogue, meaningful dialogue, or quiet. Moreover, likeness ratings showed that the composites constructed after ignoring the meaningful halfalogue resembled the perpetrator less than did those constructed after experiencing quiet or ignoring a meaningless halfalogue or a meaningful dialogue. The unpredictability of the meaningful content of the halfalogue, rather than its acoustic unexpectedness, produces distraction. The results are novel in that they suggest that an everyday distraction, even when presented in a different modality to target information, can impair the long-term memory of an eyewitness. (PsycINFO Database Record (c) 2017 APA, all rights reserved).

Wireless Battery Management System of Electric Transport

NASA Astrophysics Data System (ADS)

Rahman, Ataur; Rahman, Mizanur; Rashid, Mahbubur

2017-11-01

Electric vehicles (EVs) are being developed and considered as the future transportation to reduce emission of toxic gas, cost and weight. The battery pack is one of the main crucial parts of the electric vehicle. The power optimization of the battery pack has been maintained by developing a two phase evaporative thermal management system which operation has been controlled by using a wireless battery management system. A large number of individual cells in a battery pack have many wire terminations that are liable for safety failure. To reduce the wiring problem, a wireless battery management system based on ZigBee communication protocol and point-to-point wireless topology has been presented. Microcontrollers and wireless modules are employed to process the information from several sensors (voltage, temperature and SOC) and transmit to the display devices respectively. The WBMS multistage charge balancing system offering more effective and efficient responses for several numbers of series connected battery cells. The concept of double tier switched capacitor converter and resonant switched capacitor converter is used for reducing the charge balancing time of the cells. The balancing result for 2 cells and 16 cells are improved by 15.12% and 25.3% respectively. The balancing results are poised to become better when the battery cells are increased.

Lithium-ion capacitors using carbide-derived carbon as the positive electrode - A comparison of cells with graphite and Li4Ti5O12 as the negative electrode

NASA Astrophysics Data System (ADS)

Rauhala, Taina; Leis, Jaan; Kallio, Tanja; Vuorilehto, Kai

2016-11-01

The use of carbide-derived carbon (CDC) as the positive electrode material for lithium-ion capacitors (LICs) is investigated. CDC based LIC cells are studied utilizing two different negative electrode materials: graphite and lithium titanate Li4Ti5O12 (LTO). The graphite electrodes are prelithiated before assembling the LICs, and LTO containing cells are studied with and without prelithiation. The rate capability and cycle life stability during 1000 cycles are evaluated by galvanostatic cycling at current densities of 0.4-4 mA cm-2. The CDC shows a specific capacitance of 120 F g-1 in the organic lithium-containing electrolyte, and the LICs demonstrate a good stability over 1000 charge-discharge cycles. The choice of the negative electrode is found to have an effect on the utilization of the CDC positive electrode during cycling and on the specific energy of the device. The graphite/CDC cell delivers a maximum specific discharge energy of 90 Wh kg-1 based on the total mass of active material in the cell. Both the prelithiated and non-prelithiated LTO/CDC cells show a specific energy of around 30 Wh kg-1.

Engram Cells Retain Memory Under Retrograde Amnesia

PubMed Central

Ryan, Tomás J.; Roy, Dheeraj S.; Pignatelli, Michele; Arons, Autumn; Tonegawa, Susumu

2017-01-01

Memory consolidation is the process by which a newly formed and unstable memory transforms into a stable long-term memory. It is unknown whether the process of memory consolidation occurs exclusively by the stabilization of memory engrams. By employing learning-dependent cell labeling, we identified an increase of synaptic strength and dendritic spine density specifically in consolidated memory engram cells. While these properties are lacking in the engram cells under protein synthesis inhibitor-induced amnesia, direct optogenetic activation of these cells results in memory retrieval, and this correlates with the retained engram cell-specific connectivity. We propose that a specific pattern of connectivity of engram cells may be crucial for memory information storage and that strengthened synapses in these cells critically contribute to the memory retrieval process. PMID:26023136

49 CFR 173.176 - Capacitors.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 49 Transportation 2 2013-10-01 2013-10-01 false Capacitors. 173.176 Section 173.176 Transportation... PACKAGINGS Non-bulk Packaging for Hazardous Materials Other Than Class 1 and Class 7 § 173.176 Capacitors. (a) Capacitors, including capacitors containing an electrolyte that does not meet the definition of any hazard...

49 CFR 173.176 - Capacitors.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 49 Transportation 2 2014-10-01 2014-10-01 false Capacitors. 173.176 Section 173.176 Transportation... PACKAGINGS Non-bulk Packaging for Hazardous Materials Other Than Class 1 and Class 7 § 173.176 Capacitors. (a) Capacitors, including capacitors containing an electrolyte that does not meet the definition of any hazard...

Electronic transport in two-dimensional high dielectric constant nanosystems.

PubMed

Ortuño, M; Somoza, A M; Vinokur, V M; Baturina, T I

2015-04-10

There has been remarkable recent progress in engineering high-dielectric constant two dimensional (2D) materials, which are being actively pursued for applications in nanoelectronics in capacitor and memory devices, energy storage, and high-frequency modulation in communication devices. Yet many of the unique properties of these systems are poorly understood and remain unexplored. Here we report a numerical study of hopping conductivity of the lateral network of capacitors, which models two-dimensional insulators, and demonstrate that 2D long-range Coulomb interactions lead to peculiar size effects. We find that the characteristic energy governing electronic transport scales logarithmically with either system size or electrostatic screening length depending on which one is shorter. Our results are relevant well beyond their immediate context, explaining, for example, recent experimental observations of logarithmic size dependence of electric conductivity of thin superconducting films in the critical vicinity of superconductor-insulator transition where a giant dielectric constant develops. Our findings mark a radical departure from the orthodox view of conductivity in 2D systems as a local characteristic of materials and establish its macroscopic global character as a generic property of high-dielectric constant 2D nanomaterials.

Physical and Electrical Characterization of Aluminum Polymer Capacitors

NASA Technical Reports Server (NTRS)

Liu, David; Sampson, Michael J.

2010-01-01

Polymer aluminum capacitors from several manufacturers with various combinations of capacitance, rated voltage, and ESR values were physically examined and electrically characterized. The physical construction analysis of the capacitors revealed three different capacitor structures, i.e., traditional wound, stacked, and laminated. Electrical characterization results of polymer aluminum capacitors are reported for frequency-domain dielectric response at various temperatures, surge breakdown voltage, and other dielectric properties. The structure-property relations in polymer aluminum capacitors are discussed.

Physical and Electrical Characterization of Polymer Aluminum Capacitors

NASA Technical Reports Server (NTRS)

Liu, David; Sampson, Michael J.

2010-01-01

Polymer aluminum capacitors from several manufacturers with various combinations of capacitance, rated voltage, and ESR values were physically examined and electrically characterized. The physical construction analysis of the capacitors revealed three different capacitor structures, i.e., traditional wound, stacked, and laminated. Electrical characterization results of polymer aluminum capacitors are reported for frequency-domain dielectric response at various temperatures, surge breakdown voltage, and other dielectric properties. The structure-property relations in polymer aluminum capacitors are discussed.

PRECISION INTEGRATOR FOR MINUTE ELECTRIC CURRENTS

DOEpatents

Hemmendinger, A.; Helmer, R.J.

1961-10-24

An integrator is described for measuring the value of integrated minute electrical currents. The device consists of a source capacitor connected in series with the source of such electrical currents, a second capacitor of accurately known capacitance and a source of accurately known and constant potential, means responsive to the potentials developed across the source capacitor for reversibly connecting the second capacitor in series with the source of known potential and with the source capacitor and at a rate proportional to the potential across the source capacitor to maintain the magnitude of the potential across the source capacitor at approximately zero. (AEC)

Characterization of Postinfusion Phenotypic Differences in Fresh Versus Cryopreserved TCR Engineered Adoptive Cell Therapy Products.

PubMed

Nowicki, Theodore S; Escuin-Ordinas, Helena; Avramis, Earl; Chmielowski, Bartosz; Chodon, Thinle; Berent-Maoz, Beata; Wang, Xiaoyan; Kaplan-Lefko, Paula; Yang, Lili; Baltimore, David; Economou, James S; Ribas, Antoni; Comin-Anduix, Begoña

2018-06-01

Adoptive cell therapy (ACT) consisting of genetically engineered T cells expressing tumor antigen-specific T-cell receptors displays robust initial antitumor activity, followed by loss of T-cell activity/persistence and frequent disease relapse. We characterized baseline and longitudinal T-cell phenotype variations resulting from different manufacturing and administration protocols in patients who received ACT. Patients with melanoma who enrolled in the F5-MART-1 clinical trial (NCT00910650) received infusions of MART-1 T-cell receptors transgenic T cells with MART-1 peptide-pulsed dendritic cell vaccination. Patients were divided into cohorts based on several manufacturing changes in the generation and administration of the transgenic T cells: decreasing ex vivo stimulation/expansion time, increased cell dose, and receiving fresh instead of cryopreserved cells. T-cell phenotypes were analyzed by flow cytometry at baseline and longitudinally in peripheral blood. Transgenic T cells with shorter ex vivo culture/expansion periods displayed significantly increased expression of markers associated with less differentiated naive/memory populations, as well as significantly decreased expression of the inhibitory receptor programmed death 1 (PD1). Patients receiving fresh infusions of transgenic cells demonstrated expansion of central memory T cells and delayed acquisition of PD1 expression compared with patients who received cryopreserved products. Freshly infused transgenic T cells showed persistence and expansion of naive and memory T-cell populations and delayed acquisition of PD1 expression, which correlated with this cohort's superior persistence of transgenic cells and response to dendritic cell vaccines. These results may be useful in designing future ACT protocols.

Characterization of Postinfusion Phenotypic Differences in Fresh Versus Cryopreserved TCR Engineered Adoptive Cell Therapy Products

PubMed Central

Nowicki, Theodore S.; Escuin-Ordinas, Helena; Avramis, Earl; Chmielowski, Bartosz; Chodon, Thinle; Berent-Maoz, Beata; Wang, Xiaoyan; Kaplan-Lefko, Paula; Yang, Lili; Baltimore, David; Economou, James S.; Ribas, Antoni

2018-01-01

Adoptive cell therapy (ACT) consisting of genetically engineered T cells expressing tumor antigen-specific T-cell receptors displays robust initial antitumor activity, followed by loss of T-cell activity/persistence and frequent disease relapse. We characterized baseline and longitudinal T-cell phenotype variations resulting from different manufacturing and administration protocols in patients who received ACT. Patients with melanoma who enrolled in the F5-MART-1 clinical trial (NCT00910650) received infusions of MART-1 T-cell receptors transgenic T cells with MART-1 peptide-pulsed dendritic cell vaccination. Patients were divided into cohorts based on several manufacturing changes in the generation and administration of the transgenic T cells: decreasing ex vivo stimulation/expansion time, increased cell dose, and receiving fresh instead of cryopreserved cells. T-cell phenotypes were analyzed by flow cytometry at baseline and longitudinally in peripheral blood. Transgenic T cells with shorter ex vivo culture/expansion periods displayed significantly increased expression of markers associated with less differentiated naive/memory populations, as well as significantly decreased expression of the inhibitory receptor programmed death 1 (PD1). Patients receiving fresh infusions of transgenic cells demonstrated expansion of central memory T cells and delayed acquisition of PD1 expression compared with patients who received cryopreserved products. Freshly infused transgenic T cells showed persistence and expansion of naive and memory T-cell populations and delayed acquisition of PD1 expression, which correlated with this cohort’s superior persistence of transgenic cells and response to dendritic cell vaccines. These results may be useful in designing future ACT protocols. PMID:29470191

High Energy Density Aqueous Electrochemical Capacitors with a KI-KOH Electrolyte.

PubMed

Wang, Xingfeng; Chandrabose, Raghu S; Chun, Sang-Eun; Zhang, Tianqi; Evanko, Brian; Jian, Zelang; Boettcher, Shannon W; Stucky, Galen D; Ji, Xiulei

2015-09-16

We report a new electrochemical capacitor with an aqueous KI-KOH electrolyte that exhibits a higher specific energy and power than the state-of-the-art nonaqueous electrochemical capacitors. In addition to electrical double layer capacitance, redox reactions in this device contribute to charge storage at both positive and negative electrodes via a catholyte of IOx-/I- couple and a redox couple of H2O/Had, respectively. Here, we, for the first time, report utilizing IOx-/I- redox couple for the positive electrode, which pins the positive electrode potential to be 0.4-0.5 V vs Ag/AgCl. With the positive electrode potential pinned, we can polarize the cell to 1.6 V without breaking down the aqueous electrolyte so that the negative electrode potential could reach -1.1 V vs Ag/AgCl in the basic electrolyte, greatly enhancing energy storage. Both mass spectroscopy and Raman spectrometry confirm the formation of IO3- ions (+5) from I- (-1) after charging. Based on the total mass of electrodes and electrolyte in a practically relevant cell configuration, the device exhibits a maximum specific energy of 7.1 Wh/kg, operates between -20 and 50 °C, provides a maximum specific power of 6222 W/kg, and has a stable cycling life with 93% retention of the peak specific energy after 14,000 cycles.

A compact submicrosecond, high current generator

NASA Astrophysics Data System (ADS)

Kovalchuk, B. M.; Kharlov, A. V.; Zorin, V. B.; Zherlitsyn, A. A.

2009-08-01

Pulsed current generator was developed for experiments with current carrying pulsed plasma. Main parts of the generator are capacitor bank, low inductive current driving lines, and central load part. Generator consists of four identical sections, connected in parallel to one load. Capacitor bank is assembled from 24 capacitor blocks (100 kV, 80 nF), connected in parallel. It stores 9.6 kJ at 100 kV charging voltage. Each capacitor block incorporates a multigap spark switch, which is able to commute by six parallel channels. Switches operate in dry air at atmospheric pressure. The generator was tested with an inductive load and a liner load. At 17.5 nH inductive load and 100 kV of charging voltage it provides 650 kA of current amplitude with 390 ns rise time with 0.6 Ω damping resistors in discharge circuit of each capacitor block. The net generator inductance without a load was optimized to be as low as 15 nH, which results in extremely low impedance of the generator (˜0.08 Ω). It ensures effective energy coupling with a low impedance load such as Z pinch. The generator operates reliably without any adjustments in 70-100 kV range of charging voltage. Jitter in delay between output pulse and triggering pulse is less than 5 ns at 70-100 kV charging voltage. Operation and handling are very simple, because no oil or purified gases are required for the generator. The generator has dimensions 5.24×1.2×0.18 m3 and total weight about 1400 kg, thus manifesting itself as simple, robust, and cost effective apparatus.

Investigation of Tantalum Wet Slug Capacitor Failures in the Apollo Telescope Mount Charger Battery Regulator Modules

NASA Technical Reports Server (NTRS)

Williams, J. F.; Wiedeman, D. H.

1973-01-01

This investigation describes the capacitor failures and to identify the cause of the failure mechanism. Early failures were thought to have happened because of age and/or abuse since the failed capacitors were dated 1967. It is shown that all 1967 capacitors were replaced with 1972 capacitors.

High Temperature Evaluation of Tantalum Capacitors - Test 1

DOE Data Explorer

Cieslewski, Grzegorz

2014-09-28

Tantalum capacitors can provide much higher capacitance at high-temperatures than the ceramic capacitors. This study evaluates selected tantalum capacitors at high temperatures to determine their suitability for you in geothermal field. This data set contains results of the first test where three different types of capacitors were evaluated at 260C.

Effect of Compressive Stresses on Leakage Currents in Microchip Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2012-01-01

Microchip tantalum capacitors are manufactured using new technologies that allow for production of small size capacitors (down to EIA case size 0402) with volumetric efficiency much greater than for regular chip capacitors. Due to a small size of the parts and leadless design they might be more sensitive to mechanical stresses that develop after soldering onto printed wiring boards (PWB) compared to standard chip capacitors. In this work, the effect of compressive stresses on leakage currents in capacitors has been investigated in the range of stresses up to 200 MPa. Significant, up to three orders of magnitude, variations of currents were observed after the stress exceeds a certain critical level that varied from 10 MPa to 180 MPa for capacitors used in this study. A stress-induced generation of electron traps in tantalum pentoxide dielectric is suggested to explain reversible variations of leakage currents in tantalum capacitors. Thermo-mechanical characteristics of microchip capacitors have been studied to estimate the level of stresses caused by assembly onto PWB and assess the risk of stress-related degradation and failures. Keywords: tantalum capacitors, leakage current, soldering, reliability, mechanical stress.

Towards fractional-order capacitors with broad tunable constant phase angles: multi-walled carbon nanotube-polymer composite as a case study

NASA Astrophysics Data System (ADS)

Agambayev, Agamyrat; Rajab, Karam H.; Hassan, Ali H.; Farhat, Mohamed; Bagci, Hakan; Salama, Khaled N.

2018-02-01

In this study, multi-walled carbon nanotube (MWCNT) filled polyevinelidenefluoride-trifluoroethylene-chlorofluoroethylene composites are used to realize fractional-order capacitors (FOCs). A solution-mixing and drop-casting approach is used to fabricate the composite. Due to the high aspect ratio of MWCNTs, percolation regime starts at a small weight percentage (wt%), 1.00%.The distributed MWCNTs inside the polymer act as an electrical network of micro-capacitors and micro-resistors, which, in effect, behaves like a FOC. The resulting FOCs’ constant phase angle (CPA) can be tuned from -65{\\hspace{0pt}}^\\circ to -7{\\hspace{0pt}}^\\circ by changing the wt% of the MWCNTs. This is the largest dynamic range reported so far at the frequency range from 150 kHz to 2 MHz for an FOC. Furthermore, the CPA and pseudo-capacitance are shown to be practically stable (with less than 1% variation) when the applied voltage is, changed between 500 µV and 5 V. For a fixed value of CPA, the pseudo-capacitance can be tuned by changing the thickness of the composite, which can be done in a straightforward manner via the solution-mixing and drop-casting fabrication approach. Finally, it is shown that the frequency of a Hartley oscillator built using an FOC is almost 15 times higher than that of a Hartley oscillator built using a conventional capacitor.

Comparative evaluation of power factor impovement techniques for squirrel cage induction motors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spee, R.; Wallace, A.K.

1992-04-01

This paper describes the results obtained from a series of tests of relatively simple methods of improving the power factor of squirrel-cage induction motors. The methods, which are evaluated under controlled laboratory conditions for a 10-hp, high-efficiency motor, include terminal voltage reduction; terminal static capacitors; and a floating'' winding with static capacitors. The test results are compared with equivalent circuit model predictions that are then used to identify optimum conditions for each of the power factor improvement techniques compared with the basic induction motor. Finally, the relative economic value, and the implications of component failures, of the three methods aremore » discussed.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Babadi, A. S., E-mail: aein.shiri-babadi@eit.lth.se; Lind, E.; Wernersson, L. E.

A qualitative analysis on capacitance-voltage and conductance data for high-κ/InAs capacitors is presented. Our measured data were evaluated with a full equivalent circuit model, including both majority and minority carriers, as well as interface and border traps, formulated for narrow band gap metal-oxide-semiconductor capacitors. By careful determination of interface trap densities, distribution of border traps across the oxide thickness, and taking into account the bulk semiconductor response, it is shown that the trap response has a strong effect on the measured capacitances. Due to the narrow bandgap of InAs, there can be a large surface concentration of electrons and holesmore » even in depletion, so a full charge treatment is necessary.« less

Flexible MXene/Carbon Nanotube Composite Paper with High Volumetric Capacitance

DOE PAGES

Zhao, Meng-Qiang; Ren, Chang E.; Ling, Zheng; ...

2014-11-18

Electrochemical capacitors attract attention because of their high power densities and long cycle lives. Moreover, with increasing demand for portable and wearable electronics, recent research has focused primarily on improving the energy density per unit of volume of electrochemical capacitors. But, the volumetric capacitances of carbon-based electrodes is limited at around 60 F cm -3 for commercial devices, and at best in the range of 300 F cm -3 for low-density porous carbons (<0.5–1 g cm -3 ). Although extremely high capacitances of 1000–1500 F cm -3 can be achieved for hydrated ruthenium oxide, RuO 2 , its highmore » cost limits its wide-spread applications.« less

Analysis of antigen-specific B-cell memory directly ex vivo.

PubMed

McHeyzer-Williams, Louise J; McHeyzer-Williams, Michael G

2004-01-01

Helper T-cell-regulated B-cell memory develops in response to initial antigen priming as a cellular product of the germinal center (GC) reaction. On antigen recall, memory response precursors expand rapidly with exaggerated differentiation into plasma cells to produce the high-titer, high-affinity antibody(Ab) that typifies the memory B-cell response in vivo. We have devised a high-resolution flow cytometric strategy to quantify the emergence and maintenance of antigen-specific memory B cells directly ex vivo. Extended cell surface phenotype establishes a level of cellular diversity not previously appreciated for the memory B-cell compartment. Using an "exclusion transfer" strategy, we ascertain the capacity of two distinct memory B-cell populations to transfer antigen-specific memory into naive adoptive hosts. Finally, we sequence expressed messenger ribonucleic acid (mRNA) from single cells within the population to estimate the level of somatic hypermutation as the best molecular indicator of B-cell memory. In this chapter, we describe the methods used in each of these four sections that serve to provide high-resolution quantification of antigen-specific B-cell memory responses directly ex vivo.

A new method of optimal capacitor switching based on minimum spanning tree theory in distribution systems

NASA Astrophysics Data System (ADS)

Li, H. W.; Pan, Z. Y.; Ren, Y. B.; Wang, J.; Gan, Y. L.; Zheng, Z. Z.; Wang, W.

2018-03-01

According to the radial operation characteristics in distribution systems, this paper proposes a new method based on minimum spanning trees method for optimal capacitor switching. Firstly, taking the minimal active power loss as objective function and not considering the capacity constraints of capacitors and source, this paper uses Prim algorithm among minimum spanning trees algorithms to get the power supply ranges of capacitors and source. Then with the capacity constraints of capacitors considered, capacitors are ranked by the method of breadth-first search. In term of the order from high to low of capacitor ranking, capacitor compensation capacity based on their power supply range is calculated. Finally, IEEE 69 bus system is adopted to test the accuracy and practicality of the proposed algorithm.

Strong homeostatic TCR signals induce formation of self-tolerant virtual memory CD8 T cells.

PubMed

Drobek, Ales; Moudra, Alena; Mueller, Daniel; Huranova, Martina; Horkova, Veronika; Pribikova, Michaela; Ivanek, Robert; Oberle, Susanne; Zehn, Dietmar; McCoy, Kathy D; Draber, Peter; Stepanek, Ondrej

2018-05-11

Virtual memory T cells are foreign antigen-inexperienced T cells that have acquired memory-like phenotype and constitute 10-20% of all peripheral CD8 + T cells in mice. Their origin, biological roles, and relationship to naïve and foreign antigen-experienced memory T cells are incompletely understood. By analyzing T-cell receptor repertoires and using retrogenic monoclonal T-cell populations, we demonstrate that the virtual memory T-cell formation is a so far unappreciated cell fate decision checkpoint. We describe two molecular mechanisms driving the formation of virtual memory T cells. First, virtual memory T cells originate exclusively from strongly self-reactive T cells. Second, the stoichiometry of the CD8 interaction with Lck regulates the size of the virtual memory T-cell compartment via modulating the self-reactivity of individual T cells. Although virtual memory T cells descend from the highly self-reactive clones and acquire a partial memory program, they are not more potent in inducing experimental autoimmune diabetes than naïve T cells. These data underline the importance of the variable level of self-reactivity in polyclonal T cells for the generation of functional T-cell diversity. © 2018 The Authors. Published under the terms of the CC BY 4.0 license.

The plasma membrane as a capacitor for energy and metabolism

PubMed Central

Ray, Supriyo; Kassan, Adam; Busija, Anna R.; Rangamani, Padmini

2016-01-01

When considering which components of the cell are the most critical to function and physiology, we naturally focus on the nucleus, the mitochondria that regulate energy and apoptotic signaling, or other organelles such as the endoplasmic reticulum, Golgi, ribosomes, etc. Few people will suggest that the membrane is the most critical element of a cell in terms of function and physiology. Those that consider the membrane critical will point to its obvious barrier function regulated by the lipid bilayer and numerous ion channels that regulate homeostatic gradients. What becomes evident upon closer inspection is that not all membranes are created equal and that there are lipid-rich microdomains that serve as platforms of signaling and a means of communication with the intracellular environment. In this review, we explore the evolution of membranes, focus on lipid-rich microdomains, and advance the novel concept that membranes serve as “capacitors for energy and metabolism.” Within this framework, the membrane then is the primary and critical regulator of stress and disease adaptation of the cell. PMID:26771520

Experimental realization of a multiplexed quantum memory with 225 individually accessible memory cells.

PubMed

Pu, Y-F; Jiang, N; Chang, W; Yang, H-X; Li, C; Duan, L-M

2017-05-08

To realize long-distance quantum communication and quantum network, it is required to have multiplexed quantum memory with many memory cells. Each memory cell needs to be individually addressable and independently accessible. Here we report an experiment that realizes a multiplexed DLCZ-type quantum memory with 225 individually accessible memory cells in a macroscopic atomic ensemble. As a key element for quantum repeaters, we demonstrate that entanglement with flying optical qubits can be stored into any neighboring memory cells and read out after a programmable time with high fidelity. Experimental realization of a multiplexed quantum memory with many individually accessible memory cells and programmable control of its addressing and readout makes an important step for its application in quantum information technology.

Effector CD8 T cells dedifferentiate into long-lived memory cells.

PubMed

Youngblood, Ben; Hale, J Scott; Kissick, Haydn T; Ahn, Eunseon; Xu, Xiaojin; Wieland, Andreas; Araki, Koichi; West, Erin E; Ghoneim, Hazem E; Fan, Yiping; Dogra, Pranay; Davis, Carl W; Konieczny, Bogumila T; Antia, Rustom; Cheng, Xiaodong; Ahmed, Rafi

2017-12-21

Memory CD8 T cells that circulate in the blood and are present in lymphoid organs are an essential component of long-lived T cell immunity. These memory CD8 T cells remain poised to rapidly elaborate effector functions upon re-exposure to pathogens, but also have many properties in common with naive cells, including pluripotency and the ability to migrate to the lymph nodes and spleen. Thus, memory cells embody features of both naive and effector cells, fuelling a long-standing debate centred on whether memory T cells develop from effector cells or directly from naive cells. Here we show that long-lived memory CD8 T cells are derived from a subset of effector T cells through a process of dedifferentiation. To assess the developmental origin of memory CD8 T cells, we investigated changes in DNA methylation programming at naive and effector cell-associated genes in virus-specific CD8 T cells during acute lymphocytic choriomeningitis virus infection in mice. Methylation profiling of terminal effector versus memory-precursor CD8 T cell subsets showed that, rather than retaining a naive epigenetic state, the subset of cells that gives rise to memory cells acquired de novo DNA methylation programs at naive-associated genes and became demethylated at the loci of classically defined effector molecules. Conditional deletion of the de novo methyltransferase Dnmt3a at an early stage of effector differentiation resulted in reduced methylation and faster re-expression of naive-associated genes, thereby accelerating the development of memory cells. Longitudinal phenotypic and epigenetic characterization of the memory-precursor effector subset of virus-specific CD8 T cells transferred into antigen-free mice revealed that differentiation to memory cells was coupled to erasure of de novo methylation programs and re-expression of naive-associated genes. Thus, epigenetic repression of naive-associated genes in effector CD8 T cells can be reversed in cells that develop into long-lived memory CD8 T cells while key effector genes remain demethylated, demonstrating that memory T cells arise from a subset of fate-permissive effector T cells.

Analog storage integrated circuit

DOEpatents

Walker, J. T.; Larsen, R. S.; Shapiro, S. L.

1989-01-01

A high speed data storage array is defined utilizing a unique cell design for high speed sampling of a rapidly changing signal. Each cell of the array includes two input gates between the signal input and a storage capacitor. The gates are controlled by a high speed row clock and low speed column clock so that the instantaneous analog value of the signal is only sampled and stored by each cell on coincidence of the two clocks.

Analog storage integrated circuit

DOEpatents

Walker, J.T.; Larsen, R.S.; Shapiro, S.L.

1989-03-07

A high speed data storage array is defined utilizing a unique cell design for high speed sampling of a rapidly changing signal. Each cell of the array includes two input gates between the signal input and a storage capacitor. The gates are controlled by a high speed row clock and low speed column clock so that the instantaneous analog value of the signal is only sampled and stored by each cell on coincidence of the two clocks. 6 figs.

2014 NEPP Tasks Update for Ceramic and Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2014-01-01

Presentation describes recent development in research on MnO2, wet, and polymer tantalum capacitors. Low-voltage failures in multilayer ceramic capacitors and techniques to reveal precious metal electrode (PME) and base metal electrode (BME) capacitors with cracks are discussed. A voltage breakdown technique is suggested to select high quality low-voltage BME ceramic capacitors.

Research into the use of pyrolytic oxides and polymers for the fabrication of thin film high energy capacitors

NASA Technical Reports Server (NTRS)

Nevin, J. H.

1983-01-01

Construction, capacitance and dissipation factor, and electrode materials for single layer capacitors are discussed. Basic construction, phosphosilicate glass, ten layer capacitors, twenty layer capacitors, stress measurements, buffered oxide layers, and 30 layer capacitors are also discussed. Spin-on phosphosilicate glass is addressed. Polymers as dielectric materials are also considered.

Booster vaccinations: can immunologic memory outpace disease pathogenesis?

PubMed

Pichichero, Michael E

2009-12-01

Almost all current vaccines work by the induction of antibodies in serum or on the mucosa to block adherence of pathogens to epithelial cells or interfere with microbial invasion of the bloodstream. However, antibody levels usually decline after vaccination to undetectable amounts if further vaccination does not occur. Persistence of vaccine-induced antibodies usually goes well beyond the time when they should have decayed to undetectable levels because of ongoing "natural" boosting or other immunologic mechanisms. The production of memory B and T cells is of clear importance, but the likelihood that a memory response will be fast enough in the absence of a protective circulating antibody level likely depends on the pace of pathogenesis of a specific organism. This concept is discussed with regard to Haemophilus influenzae type b, Streptococcus pneumoniae, and Neisseria meningitidis; hepatitis A and B; diphtheria, tetanus, and pertussis; polio, measles, mumps, rubella, and varicella; rotavirus; and human papilloma virus. With infectious diseases for which the pace of pathogenesis is less rapid, some individuals will contract infection before the memory response is fully activated and implemented. With infectious diseases for which the pace of pathogenesis is slow, immune memory should be sufficient to prevent disease.

Enhanced charge storage capability of Ge/GeO(2) core/shell nanostructure.

PubMed

Yuan, C L; Lee, P S

2008-09-03

A Ge/GeO(2) core/shell nanostructure embedded in an Al(2)O(3) gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal-insulator-semiconductor (MIS) capacitor for Ge/GeO(2) core/shell nanoparticles compared to Ge nanoparticles only, which is due to the high percentage of defects located on the surface and grain boundaries of the GeO(2) shell. We believe that the findings presented here provide physical insight and offer useful guidelines to controllably modify the charge storage properties of indirect semiconductors through defect engineering.

Effect of Electronegativity on Bipolar Resistive Switching in a WO3-Based Asymmetric Capacitor Structure.

PubMed

Kim, Jongmin; Inamdar, Akbar I; Jo, Yongcheol; Woo, Hyeonseok; Cho, Sangeun; Pawar, Sambhaji M; Kim, Hyungsang; Im, Hyunsik

2016-04-13

This study investigates the transport and switching time of nonvolatile tungsten oxide based resistive-switching (RS) memory devices. These devices consist of a highly resistive tungsten oxide film sandwiched between metal electrodes, and their RS characteristics are bipolar in the counterclockwise direction. The switching voltage, retention, endurance, and switching time are strongly dependent on the type of electrodes used, and we also find quantitative and qualitative evidence that the electronegativity (χ) of the electrodes plays a key role in determining the RS properties and switching time. We also propose an RS model based on the role of the electronegativity at the interface.

Distinct T helper cell dependence of memory B-cell proliferation versus plasma cell differentiation.

PubMed

Zabel, Franziska; Fettelschoss, Antonia; Vogel, Monique; Johansen, Pål; Kündig, Thomas M; Bachmann, Martin F

2017-03-01

Several memory B-cell subclasses with distinct functions have been described, of which the most effective is the class-switched (CS) memory B-cell population. We have previously shown, using virus-like particles (VLPs), that the proliferative potential of these CS memory B cells is limited and they fail to re-enter germinal centres (GCs). However, VLP-specific memory B cells quickly differentiated into secondary plasma cells (PCs) with the virtue of elevated antibody production compared with primary PCs. Whereas the induction of VLP + memory B cells was strongly dependent on T helper cells, we were wondering whether re-stimulation of VLP + memory B cells and their differentiation into secondary PCs would also require T helper cells. Global absence of T helper cells led to strongly impaired memory B cell proliferation and PC differentiation. In contrast, lack of interleukin-21 receptor-dependent follicular T helper cells or CD40 ligand signalling strongly affected proliferation of memory B cells, but differentiation into mature secondary PCs exhibiting increased antibody production was essentially normal. This contrasts with primary B-cell responses, where a strong dependence on CD40 ligand but limited importance of interleukin-21 receptor was seen. Hence, T helper cell dependence differs between primary and secondary B-cell responses as well as between memory B-cell proliferation and PC differentiation. © 2016 John Wiley & Sons Ltd.

IL-15 induces CD4 effector memory T cell production and tissue emigration in nonhuman primates.

PubMed

Picker, Louis J; Reed-Inderbitzin, Edward F; Hagen, Shoko I; Edgar, John B; Hansen, Scott G; Legasse, Alfred; Planer, Shannon; Piatak, Michael; Lifson, Jeffrey D; Maino, Vernon C; Axthelm, Michael K; Villinger, Francois

2006-06-01

HIV infection selectively targets CD4+ effector memory T (T EM) cells, resulting in dramatic depletion of CD4+ T cells in mucosal effector sites in early infection. Regeneration of the T EM cell compartment is slow and incomplete, even when viral replication is controlled by antiretroviral therapy (ART). Here, we demonstrate that IL-15 dramatically increases in vivo proliferation of rhesus macaque (RM) CD4+ and CD8+ T EM cells with little effect on the naive or central memory T (T CM) cell subsets, a response pattern that is quite distinct from that of either IL-2 or IL-7. T EM cells produced in response to IL-15 did not accumulate in blood. Rather, 5-bromo-2'-deoxyuridine (BrdU) labeling studies suggest that many of these cells rapidly disperse to extralymphoid effector sites, where they manifest (slow) decay kinetics indistinguishable from that of untreated controls. In RMs with uncontrolled SIV infection and highly activated immune systems, IL-15 did not significantly increase CD4+ T EM cell proliferation, but with virologic control and concomitant reduction in immune activation by ART, IL-15 responsiveness was again observed. These data suggest that therapeutic use of IL-15 in the setting of ART might facilitate specific restoration of the CD4 + T cell compartment that is the primary target of HIV with less risk of exhausting precursor T cell compartments or generating potentially deleterious regulatory subsets.

IL-15 induces CD4+ effector memory T cell production and tissue emigration in nonhuman primates

PubMed Central

Picker, Louis J.; Reed-Inderbitzin, Edward F.; Hagen, Shoko I.; Edgar, John B.; Hansen, Scott G.; Legasse, Alfred; Planer, Shannon; Piatak, Michael; Lifson, Jeffrey D.; Maino, Vernon C.; Axthelm, Michael K.; Villinger, Francois

2006-01-01

HIV infection selectively targets CD4+ effector memory T (TEM) cells, resulting in dramatic depletion of CD4+ T cells in mucosal effector sites in early infection. Regeneration of the TEM cell compartment is slow and incomplete, even when viral replication is controlled by antiretroviral therapy (ART). Here, we demonstrate that IL-15 dramatically increases in vivo proliferation of rhesus macaque (RM) CD4+ and CD8+ TEM cells with little effect on the naive or central memory T (TCM) cell subsets, a response pattern that is quite distinct from that of either IL-2 or IL-7. TEM cells produced in response to IL-15 did not accumulate in blood. Rather, 5-bromo-2′-deoxyuridine (BrdU) labeling studies suggest that many of these cells rapidly disperse to extralymphoid effector sites, where they manifest (slow) decay kinetics indistinguishable from that of untreated controls. In RMs with uncontrolled SIV infection and highly activated immune systems, IL-15 did not significantly increase CD4+ TEM cell proliferation, but with virologic control and concomitant reduction in immune activation by ART, IL-15 responsiveness was again observed. These data suggest that therapeutic use of IL-15 in the setting of ART might facilitate specific restoration of the CD4+ T cell compartment that is the primary target of HIV with less risk of exhausting precursor T cell compartments or generating potentially deleterious regulatory subsets. PMID:16691294

Charge Trapping Properties of Ge Nanocrystals Grown via Solid-State Dewetting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnston, Steven; Jadli, I.; Aouassa, M.

2018-05-04

In the present work, we report on the charge trapping properties of Germanium Nanocrystals (Ge NCs) self assembled on SiO2 thin layer for promising applications in next-generation non volatile memory by the means of Deep Level Transient Spectroscopy (DLTS) and high frequency C-V method. The Ge NCs were grown via dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing and passivated with silicon before SiO2 capping. The role of the surface passivation is to reduce the electrical defect density at the Ge NCs-SiO2 interface. The presence of the Ge NCs in the oxide of the MOS capacitors strongly affectsmore » the C-V characteristics and increases the accumulation capacitance, causes a negative flat band voltage (VFB) shift. The DLTS has been used to study the individual Ge NCs as a single point deep level defect in the oxide. DLTS reveals two main features: the first electron traps around 255 K could correspond to dangling bonds at the Si/SiO2 interface and the second, at high-temperature (>300 K) response, could be originated from minority carrier generation in Ge NCs.« less

Vaccine-elicited SIV and HIV envelope-specific IgA and IgG memory B cells in rhesus macaque peripheral blood correlate with functional antibody responses and reduced viremia

PubMed Central

Brocca-Cofano, Egidio; McKinnon, Katherine; Demberg, Thorsten; Venzon, David; Hidajat, Rachmat; Xiao, Peng; Daltabuit-Test, Mara; Patterson, L. Jean; Robert-Guroff, Marjorie

2011-01-01

An effective HIV vaccine requires strong systemic and mucosal, cellular and humoral immunity. Numerous non-human primate studies have investigated memory T cells, but not memory B cells. Humoral immunologic memory is mediated by long-lived antibody-secreting plasma cells and differentiation of memory B cells into short-lived plasma blasts following re-exposure to immunizing antigen. Here we studied memory B cells in vaccinated rhesus macaques. PBMC were stimulated polyclonally using CD40 Ligand, IL-21 and CpG to induce B cell proliferation and differentiation into antibody secreting cells (ASC). Flow cytometry was used for phenotyping and evaluating proliferation by CFSE dilution. B cell responses were quantified by ELISPOT. Methodology was established using PBMC of vaccinated elite-controller macaques that exhibited strong, multi-functional antibody activities. Subsequently, memory B cells elicited by two replicating Ad-recombinant prime/envelope boost regimens were retrospectively evaluated pre- and post- SIV and SHIV challenges. The vaccine regimens induced SIV and HIV Env-specific IgG and IgA memory B cells. Prior to challenge, IgA memory B cells were more numerous than IgG memory B cells, reflecting the mucosal priming immunizations. Pre- and post-challenge memory B cells were correlated with functional antibody responses including antibody-dependent cellular cytotoxicity (ADCC), antibody-dependent cell-mediated viral inhibition (ADCVI) and transcytosis inhibition. Post-challenge, Env-specific IgG and IgA memory B cells were correlated with reduced chronic viremia. We conclude that functional antibody responses elicited by our prime/boost regimen were effectively incorporated into the memory B cell pool where they contributed to control of viremia following re-exposure to the immunizing antigen. PMID:21382487

Phenotypic and functional characterization of herpes simplex virus glycoprotein B epitope-specific effector and memory CD8+ T cells from symptomatic and asymptomatic individuals with ocular herpes.

PubMed

Khan, Arif A; Srivastava, Ruchi; Spencer, Doran; Garg, Sumit; Fremgen, Daniel; Vahed, Hawa; Lopes, Patricia P; Pham, Thanh T; Hewett, Charlie; Kuang, Jasmine; Ong, Nicolas; Huang, Lei; Scarfone, Vanessa M; Nesburn, Anthony B; Wechsler, Steven L; BenMohamed, Lbachir

2015-04-01

Herpes simplex virus 1 (HSV-1) glycoprotein B (gB)-specific CD8(+) T cells protect mice from herpes infection and disease. However, whether and which HSV-1 gB-specific CD8(+) T cells play a key role in the "natural" protection seen in HSV-1-seropositive healthy asymptomatic (ASYMP) individuals (who have never had clinical herpes disease) remain to be determined. In this study, we have dissected the phenotypes and the functions of HSV-1 gB-specific CD8(+) T cells from HLA-A*02:01 positive, HSV-1 seropositive ASYMP and symptomatic (SYMP) individuals (with a history of numerous episodes of recurrent ocular herpes disease). We found the following. (i) Healthy ASYMP individuals maintained a significantly higher proportion of differentiated HSV-1 gB-specific effector memory CD8(+) T cells (TEM cells) (CD45RA(low) CCR7(low) CD44(high) CD62L(low)). In contrast, SYMP patients had frequent less-differentiated central memory CD8(+) T cells (TCM cells) (CD45RA(low) CCR7(high) CD44(low) CD62L(high)). (ii) ASYMP individuals had significantly higher proportions of multifunctional effector CD8(+) T cells which responded mainly to gB342-350 and gB561-569 "ASYMP" epitopes, and simultaneously produced IFN-γ, CD107(a/b), granzyme B, and perforin. In contrast, effector CD8(+) T cells from SYMP individuals were mostly monofunctional and were directed mainly against nonoverlapping gB17-25 and gB183-191 "SYMP" epitopes. (iii) Immunization of an HLA-A*02:01 transgenic mouse model of ocular herpes with "ASYMP" CD8(+) TEM cell epitopes, but not with "SYMP" CD8(+) TCM cell epitopes, induced a strong CD8(+) T cell-dependent protective immunity against ocular herpes infection and disease. Our findings provide insights into the role of HSV-specific CD8(+) TEM cells in protection against herpes and should be considered in the development of an effective vaccine. A significantly higher proportion of differentiated and multifunctional HSV-1 gB-specific effector memory CD8(+) T cells (TEM cells) (CD45RA(low) CCR7(low) CD44(high) CD62L(low)) were found in healthy ASYMP individuals who are seropositive for HSV-1 but never had any recurrent herpetic disease, while there were frequent less-differentiated and monofunctional central memory CD8(+) T cells (TCM cells) (CD45RA(low) CCR7(high) CD44(low) CD62L(high)) in SYMP patients. Immunization with "ASYMP" CD8(+) TEM cell epitopes, but not with "SYMP" CD8(+) TCM cell epitopes, induced a strong protective HSV-specific CD8(+) T cell response in HLA-A*02:01 transgenic mice. These findings are important for the development of a safe and effective T cell-based herpes vaccine. Copyright © 2015, American Society for Microbiology. All Rights Reserved.

Humidity Testing of PME and BME Ceramic Capacitors with Cracks

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.; Herzberger, Jaemi

2014-01-01

Cracks in ceramic capacitors are one of the major causes of failures during operation of electronic systems. Humidity testing has been successfully used for many years to verify the absence of cracks and assure quality of military grade capacitors. Traditionally, only precious metal electrode (PME) capacitors were used in high reliability applications and the existing requirements for humidity testing were developed for this type of parts. With the advance of base metal electrode (BME) capacitors, there is a need for assessment of the applicability of the existing techniques for the new technology capacitors. In this work, variety of different PME and BME capacitors with introduced cracks were tested in humid environments at different voltages and temperatures. Analysis of the test results indicates differences in the behavior and failure mechanisms for BME and PME capacitors and the need for different testing conditions.

Leakage current and charging/discharging processes in barrier-type anodic alumina thin films for use in metal-insulator-metal capacitors

NASA Astrophysics Data System (ADS)

Hourdakis, E.; Koutsoureli, M.; Papaioannou, G.; Nassiopoulou, A. G.

2018-06-01

Barrier-type anodic alumina thin films are interesting for use in high capacitance density metal-insulator-metal capacitors due to their excellent dielectric properties at small thickness. This thickness is easily controlled by the anodization voltage. In previous papers we studied the main parameters of interest of the Al/barrier-type anodic alumina/Al structure for use in RF applications and showed the great potential of barrier-type anodic alumina in this respect. In this paper, we investigated in detail charging/discharging processes and leakage current of the above dielectric material. Two different sets of metal-insulator-metal capacitors were studied, namely, with the top Al electrode being either e-gun deposited or sputtered. The dielectric constant of the barrier-type anodic alumina was found at 9.3. Low leakage current was observed in all samples studied. Furthermore, depending on the film thickness, field emission following the Fowler-Nordheim mechanism was observed above an applied electric field. Charging of the anodic dielectric was observed, occurring in the bulk of the anodic layer. The stored charge was of the order of few μC/cm2 and the calculated trap density ˜2 × 1018 states/cm3, the most probable origin of charge traps being, in our opinion, positive electrolyte ions trapped in the dielectric during anodization. We do not think that oxygen vacancies play an important role, since their existence would have a more important impact on the leakage current characteristics, such as resistive memory effects or significant changes during annealing, which were not observed. Finally, discharging characteristic times as high as 5 × 109 s were measured.

ZrO2 Layer Thickness Dependent Electrical and Dielectric Properties of BST/ZrO2/BST Multilayer Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sahoo, S. K.; Misra, D.; Agrawal, D. C.

2011-01-01

Recently, high K materials play an important role in microelectronic devices such as capacitors, memory devices, and microwave devices. Now a days ferroelectric barium strontium titanate [Ba{sub x}Sr{sub 1-x}TiO{sub 3}, (BST)] thin film is being actively investigated for applications in dynamic random access memories (DRAM), field effect transistor (FET), and tunable devices because of its properties such as high dielectric constant, low leakage current, low dielectric loss, and high dielectric breakdown strength. Several approaches have been used to optimize the dielectric and electrical properties of BST thin films such as doping, graded compositions, and multilayer structures. We have found thatmore » inserting a ZrO{sub 2} layer in between two BST layers results in a significant reduction in dielectric constant, loss tangent, and leakage current in the multilayer thin films. Also it is shown that the properties of multilayer structure are found to depend strongly on the sublayer thicknesses. In this work the effect of ZrO{sub 2} layer thickness on the dielectric, ferroelectric as well as electrical properties of BST/ZrO{sub 2}/BST multilayer structure is studied. The multilayer Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3}/ZrO{sub 2}/Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} film is deposited by a sol-gel process on the platinized Si substrate. The thickness of the middle ZrO{sub 2} layer is varied while keeping the top and bottom BST layer thickness as fixed. It is observed that the dielectric constant, dielectric loss tangent, and leakage current of the multilayer films reduce with the increase of ZrO{sub 2} layer thickness and hence suitable for memory device applications. The ferroelectric properties of the multilayer film also decrease with the ZrO{sub 2} layer thickness.« less

CD8 T cell memory: it takes all kinds

PubMed Central

Hamilton, Sara E.; Jameson, Stephen C.

2012-01-01

Understanding the mechanisms that regulate the differentiation and maintenance of CD8+ memory T cells is fundamental to the development of effective T cell-based vaccines. Memory cell differentiation is influenced by the cytokines that accompany T cell priming, the history of previous antigen encounters, and the tissue sites into which memory cells migrate. These cues combine to influence the developing CD8+ memory pool, and recent work has revealed the importance of multiple transcription factors, metabolic molecules, and surface receptors in revealing the type of memory cell that is generated. Paired with increasingly meticulous subsetting and sorting of memory populations, we now know the CD8+ memory pool to be phenotypically and functionally heterogeneous in nature. This includes both recirculating and tissue-resident memory populations, and cells with varying degrees of inherent longevity and protective function. These data point to the importance of tailored vaccine design. Here we discuss how the diversity of the memory CD8+ T cell pool challenges the notion that “one size fits all” for pathogen control, and how distinct memory subsets may be suited for distinct aspects of protective immunity. PMID:23230436

Generation of switched memory B cells in response to vaccination in Down syndrome children and their siblings.

PubMed

Valentini, Diletta; Marcellini, Valentina; Bianchi, Simona; Villani, Alberto; Facchini, Marzia; Donatelli, Isabella; Castrucci, Maria Rita; Marasco, Emiliano; Farroni, Chiara; Carsetti, Rita

2015-11-27

Immunodeficiency is an integral aspect of Down syndrome, as demonstrated by the increased susceptibility to infection of affected. Mortality is still higher than in general population, with respiratory infections among the major causes of death. As more people with Down syndrome are living today than ever before, it is indispensable to develop strategies to prevent and cure the associated disorders. Vaccination is the most successful instrument of preventive medicine. Special seasonal influenza and pneumococcal vaccination strategies have been designed for individuals with risk conditions of all ages. Down syndrome individuals are not included in the high-risk categories. We enrolled in our study 15 children with Down syndrome and their siblings, vaccinated for the first time with seasonal influenza vaccine and receiving a booster dose of a glyco-conjugated pneumococcal vaccine. We compared the immunological features and response to vaccination measuring serum antibody titers and frequency of specific memory B cells. We confirm that a severe reduction of switched memory B cells is always associated to Down syndrome. After primary vaccination Down syndrome children generate significantly less specific switched memory B cells than their siblings. The response to a booster dose of vaccine is instead comparable in both groups. The production of specific antibodies was equally effective in Down syndrome and controls both after primary and secondary immunization. Down syndrome individuals should be considered a high risk group, because of their increased susceptibility to infection and reduced number of switched memory B cells. Tailored vaccination protocols are needed in order to reduce their burden of infections throughout life. Copyright © 2015. Published by Elsevier Ltd.

Robust adaptive control for a hybrid solid oxide fuel cell system

NASA Astrophysics Data System (ADS)

Snyder, Steven

2011-12-01

Solid oxide fuel cells (SOFCs) are electrochemical energy conversion devices. They offer a number of advantages beyond those of most other fuel cells due to their high operating temperature (800-1000°C), such as internal reforming, heat as a byproduct, and faster reaction kinetics without precious metal catalysts. Mitigating fuel starvation and improving load-following capabilities of SOFC systems are conflicting control objectives. However, this can be resolved by the hybridization of the system with an energy storage device, such as an ultra-capacitor. In this thesis, a steady-state property of the SOFC is combined with an input-shaping method in order to address the issue of fuel starvation. Simultaneously, an overall adaptive system control strategy is employed to manage the energy sharing between the elements as well as to maintain the state-of-charge of the energy storage device. The adaptive control method is robust to errors in the fuel cell's fuel supply system and guarantees that the fuel cell current and ultra-capacitor state-of-charge approach their target values and remain uniformly, ultimately bounded about these target values. Parameter saturation is employed to guarantee boundedness of the parameters. The controller is validated through hardware-in-the-loop experiments as well as computer simulations.

Dentate granule cell recruitment of feedforward inhibition governs engram maintenance and remote memory generalization.

PubMed

Guo, Nannan; Soden, Marta E; Herber, Charlotte; Kim, Michael TaeWoo; Besnard, Antoine; Lin, Paoyan; Ma, Xiang; Cepko, Constance L; Zweifel, Larry S; Sahay, Amar

2018-05-01

Memories become less precise and generalized over time as memory traces reorganize in hippocampal-cortical networks. Increased time-dependent loss of memory precision is characterized by an overgeneralization of fear in individuals with post-traumatic stress disorder (PTSD) or age-related cognitive impairments. In the hippocampal dentate gyrus (DG), memories are thought to be encoded by so-called 'engram-bearing' dentate granule cells (eDGCs). Here we show, using rodents, that contextual fear conditioning increases connectivity between eDGCs and inhibitory interneurons (INs) in the downstream hippocampal CA3 region. We identify actin-binding LIM protein 3 (ABLIM3) as a mossy-fiber-terminal-localized cytoskeletal factor whose levels decrease after learning. Downregulation of ABLIM3 expression in DGCs was sufficient to increase connectivity with CA3 stratum lucidum INs (SLINs), promote parvalbumin (PV)-expressing SLIN activation, enhance feedforward inhibition onto CA3 and maintain a fear memory engram in the DG over time. Furthermore, downregulation of ABLIM3 expression in DGCs conferred conditioned context-specific reactivation of memory traces in hippocampal-cortical and amygdalar networks and decreased fear memory generalization at remote (i.e., distal) time points. Consistent with the observation of age-related hyperactivity of CA3, learning failed to increase DGC-SLIN connectivity in 17-month-old mice, whereas downregulation of ABLIM3 expression was sufficient to restore DGC-SLIN connectivity, increase PV+ SLIN activation and improve the precision of remote memories. These studies exemplify a connectivity-based strategy that targets a molecular brake of feedforward inhibition in DG-CA3 and may be harnessed to decrease time-dependent memory generalization in individuals with PTSD and improve memory precision in aging individuals.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baudry, Laurent; Lukyanchuk, Igor; Vinokur, Valerii M.

Here, the tunability of electrical polarization in ferroelectrics is instrumental to their applications in information-storage devices. The existing ferroelectric memory cells are based on the two-level storage capacity with the standard binary logics. However, the latter have reached its fundamental limitations. Here we propose ferroelectric multibit cells (FMBC) utilizing the ability of multiaxial ferroelectric materials to pin the polarization at a sequence of the multistable states. Employing the catastrophe theory principles we show that these states are symmetry-protected against the information loss and thus realize novel topologically-controlled access memory (TAM). Our findings enable developing a platform for the emergent many-valuedmore » non-Boolean information technology and target challenges posed by needs of quantum and neuromorphic computing.« less

A compact 100 kV high voltage glycol capacitor.

PubMed

Wang, Langning; Liu, Jinliang; Feng, Jiahuai

2015-01-01

A high voltage capacitor is described in this paper. The capacitor uses glycerol as energy storage medium, has a large capacitance close to 1 nF, can hold off voltages of up to 100 kV for μs charging time. Allowing for low inductance, the capacitor electrode is designed as coaxial structure, which is different from the common structure of the ceramic capacitor. With a steady capacitance at different frequencies and a high hold-off voltage of up to 100 kV, the glycol capacitor design provides a potential substitute for the ceramic capacitors in pulse-forming network modulator to generate high voltage pulses with a width longer than 100 ns.

The design and implementation of on-line monitoring system for UHV compact shunt capacitors

NASA Astrophysics Data System (ADS)

Tao, Weiliang; Ni, Xuefeng; Lin, Hao; Jiang, Shengbao

2017-08-01

Because of the large capacity and compact structure of the UHV compact shunt capacitor, it is difficult to take effective measures to detect and prevent the faults. If the fault capacitor fails to take timely maintenance, it will pose a threat to the safe operation of the system and the life safety of the maintenance personnel. The development of UHV compact shunt capacitor on-line monitoring system can detect and record the on-line operation information of UHV compact shunt capacitors, analyze and evaluate the early fault warning signs, find out the fault capacitor or the capacitor with fault symptom, to ensure safe and reliable operation of the system.

The strain capacitor: A novel energy storage device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deb Shuvra, Pranoy; McNamara, Shamus, E-mail: shamus.mcnamara@louisville.edu

2014-12-15

A novel electromechanical energy storage device is reported that has the potential to have high energy densities. It can efficiently store both mechanical strain energy and electrical energy in the form of an electric field between the electrodes of a strain-mismatched bilayer capacitor. When the charged device is discharged, both the electrical and mechanical energy are extracted in an electrical form. The charge-voltage profile of the device is suitable for energy storage applications since a larger portion of the stored energy can be extracted at higher voltage levels compared to a normal capacitor. Its unique features include the potential formore » long lifetime, safety, portability, wide operating temperature range, and environment friendliness. The device can be designed to operate over varied operating voltage ranges by selecting appropriate materials and by changing the dimensions of the device. In this paper a finite element model of the device is developed to verify and demonstrate the potential of the device as an energy storage element. This device has the potential to replace conventional energy storage devices.« less

High Temperature Capacitive Strain Gage

NASA Technical Reports Server (NTRS)

Wnuk, Stephen P., Jr.; Wnuk, Stephen P., III; Wnuk, V. P.

1990-01-01

Capacitive strain gages designed for measurements in wind tunnels to 2000 F were built and evaluated. Two design approaches were followed. One approach was based on fixed capacitor plates with a movable ground plane inserted between the plates to effect differential capacitive output with strain. The second approach was based on movable capacitor plates suspended between sapphire bearings, housed in a rugged body, and arranged to operate as a differential capacitor. A sapphire bearing gage (1/4 in. diameter x 1 in. in size) was built with a range of 50,000 and a resolution of 200 microstrain. Apparent strain on Rene' 41 was less than + or - 1000 microstrain from room temperature to 2000 F. Three gage models were built from the Ground Plane Differential concept. The first was 1/4 in. square by 1/32 in. high and useable to 700 F. The second was 1/2 in. square by 1/16 in. high and useable to 1440 F. The third, also 1/2 in. square by 1/16 in. high was expected to operate in the 1600 to 2000 F range, but was not tested because time and funding ended.

Field Distribution and Coupling Investigation of an Eight-Channel RF Coil Consisting of Different Dipole Coil Elements for 7 T MRI.

PubMed

Chen, Zhichao; Solbach, Klaus; Erni, Daniel; Rennings, Andreas

2017-06-01

In this contribution, we investigate the [Formula: see text] distribution and coupling characteristics of a multichannel radio frequency (RF) coil consisting of different dipole coil elements for 7 T MRI, and explore the feasibility to achieve a compromise between field distribution and decoupling by combining different coil elements. Two types of dipole elements are considered here: the meander dipole element with a chip-capacitor-based connection to the RF shield which achieves a sufficient decoupling between the neighboring elements; and the open-ended meander dipole element which exhibits a broader magnetic field distribution. By nesting the open-ended dipole elements in between the ones with end-capacitors, the [Formula: see text] distribution, in terms of field penetration depth and homogeneity, is improved in comparison to the dipole coil consisting only of the elements with end-capacitors, and at the same time, the adjacent elements are less coupled to each other in comparison to the dipole coil consisting only of the open-ended elements. The proposed approach is validated by both full-wave simulation and experimental results.

Characterizing absolute piezoelectric microelectromechanical system displacement using an atomic force microscope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Evans, J., E-mail: radiant@ferrodevices.com; Chapman, S., E-mail: radiant@ferrodevices.com

Piezoresponse Force Microscopy (PFM) is a popular tool for the study of ferroelectric and piezoelectric materials at the nanometer level. Progress in the development of piezoelectric MEMS fabrication is highlighting the need to characterize absolute displacement at the nanometer and Ångstrom scales, something Atomic Force Microscopy (AFM) might do but PFM cannot. Absolute displacement is measured by executing a polarization measurement of the ferroelectric or piezoelectric capacitor in question while monitoring the absolute vertical position of the sample surface with a stationary AFM cantilever. Two issues dominate the execution and precision of such a measurement: (1) the small amplitude ofmore » the electrical signal from the AFM at the Ångstrom level and (2) calibration of the AFM. The authors have developed a calibration routine and test technique for mitigating the two issues, making it possible to use an atomic force microscope to measure both the movement of a capacitor surface as well as the motion of a micro-machine structure actuated by that capacitor. The theory, procedures, pitfalls, and results of using an AFM for absolute piezoelectric measurement are provided.« less

High temperature capacitive strain gage

NASA Astrophysics Data System (ADS)

Wnuk, Stephen P., Jr.; Wnuk, Stephen P., III; Wnuk, V. P.

1990-01-01

Capacitive strain gages designed for measurements in wind tunnels to 2000 F were built and evaluated. Two design approaches were followed. One approach was based on fixed capacitor plates with a movable ground plane inserted between the plates to effect differential capacitive output with strain. The second approach was based on movable capacitor plates suspended between sapphire bearings, housed in a rugged body, and arranged to operate as a differential capacitor. A sapphire bearing gage (1/4 in. diameter x 1 in. in size) was built with a range of 50,000 and a resolution of 200 microstrain. Apparent strain on Rene' 41 was less than + or - 1000 microstrain from room temperature to 2000 F. Three gage models were built from the Ground Plane Differential concept. The first was 1/4 in. square by 1/32 in. high and useable to 700 F. The second was 1/2 in. square by 1/16 in. high and useable to 1440 F. The third, also 1/2 in. square by 1/16 in. high was expected to operate in the 1600 to 2000 F range, but was not tested because time and funding ended.

Polyvinylidene fluoride film as a capacitor dielectric

NASA Technical Reports Server (NTRS)

Dematos, H. V.

1981-01-01

Thin strips of polyvinylidene fluoride film (PVDF) with vacuum deposited electrodes were made into capacitors by conventional winding and fabrication techniques. These devices were used to identify and evaluate the performance characteristics offered by the PVDF in metallized film capacitors. Variations in capacitor parameters with temperature and frequence were evaluated and compared with other dielectric films. Their impact on capacitor applications is discussed.

Evaluation of Polymer Hermetically Sealed Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2014-01-01

Polymer cathode tantalum capacitors have lower ESR (equivalent series resistance) compared to other types of tantalum capacitors and for this reason have gained popularity in the electronics design community. Their use allows improved performance of power supply systems along with substantial reduction of size and weight of the components used. However, these parts have poor thermal stability and can degrade in humid environments. Polymer hermetically sealed (PHS) capacitors avoid problems related to environmental degradation of molded case parts and can potentially replace current wet and solid hermetically sealed capacitors. In this work, PHS capacitors manufactured per DLA LAM DWG#13030 are evaluated for space applications. Several lots of capacitors manufactured over period from 2010 to 2014 were tested for the consistency of performance, electrical and thermal characteristics, highly accelerated life testing, and robustness under reverse bias and random vibration conditions. Special attention was given to analysis of leakage currents and the effect of long-term high temperature storage on capacitors in as is condition and after hermeticity loss. The results show that PHS capacitors might be especially effective for low-temperature applications or for system requiring a cold start-up. Additional screening and qualification testing have been recommended to assure the necessary quality of capacitors for space projects.

Experimental realization of a multiplexed quantum memory with 225 individually accessible memory cells

PubMed Central

Pu, Y-F; Jiang, N.; Chang, W.; Yang, H-X; Li, C.; Duan, L-M

2017-01-01

To realize long-distance quantum communication and quantum network, it is required to have multiplexed quantum memory with many memory cells. Each memory cell needs to be individually addressable and independently accessible. Here we report an experiment that realizes a multiplexed DLCZ-type quantum memory with 225 individually accessible memory cells in a macroscopic atomic ensemble. As a key element for quantum repeaters, we demonstrate that entanglement with flying optical qubits can be stored into any neighboring memory cells and read out after a programmable time with high fidelity. Experimental realization of a multiplexed quantum memory with many individually accessible memory cells and programmable control of its addressing and readout makes an important step for its application in quantum information technology. PMID:28480891

2017 NEPP Tasks Update for Ceramic and Tantalum Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2017-01-01

This presentation gives an overview of current NEPP tasks on ceramic and tantalum capacitors and plans for the future. It includes tasks on leakage currents, gas generation and case deformation in wet tantalum capacitors; ESR degradation and acceleration factors in MnO2 and polymer cathode capacitors. Preliminary results on the effect of moisture on degradation of reverse currents in MnO2 tantalum capacitors are discussed. Latest results on mechanical characteristics of MLCCs and modeling of degradation of leakage currents in BME capacitors with defects are also presented.

Strategies to optimize lithium-ion supercapacitors achieving high-performance: Cathode configurations, lithium loadings on anode, and types of separator

NASA Astrophysics Data System (ADS)

Cao, Wanjun; Li, Yangxing; Fitch, Brian; Shih, Jonathan; Doung, Tien; Zheng, Jim

2014-12-01

The Li-ion capacitor (LIC) is composed of a lithium-doped carbon anode and an activated carbon cathode, which is a half Li-ion battery (LIB) and a half electrochemical double-layer capacitor (EDLC). LICs can achieve much more energy density than EDLC without sacrificing the high power performance advantage of capacitors over batteries. LIC pouch cells were assembled using activated carbon (AC) cathode and hard carbon (HC) + stabilized lithium metal power (SLMP®) anode. Different cathode configurations, various SLMP loadings on HC anode, and two types of separators were investigated to achieve the optimal electrochemical performance of the LIC. Firstly, the cathode binders study suggests that the PTFE binder offers improved energy and power performances for LIC in comparison to PVDF. Secondly, the mass ratio of SLMP to HC is at 1:7 to obtain the optimized electrochemical performance for LIC among all the various studied mass ratios between lithium loading amounts and active anode material. Finally, compared to the separator Celgard PP 3501, cellulose based TF40-30 is proven to be a preferred separator for LIC.

Fabrication and evaluation of dispersed-Ag nanoparticles-in-polyimide thin films

NASA Astrophysics Data System (ADS)

Sonehara, Makoto; Watanabe, Yuki; Yamaguchi, Sota; Kato, Takanori; Yoshisaku, Yasuaki; Sato, Toshiro; Itoh, Eiji

2017-10-01

A thin-film common-mode filter (TF-CMF) for cell phones in the UHF band was fabricated and evaluated. The TF-CMF consisted of multiple metal-insulator-metal (MIM) capacitors and inductors. The sizes of the 0.70-1.0 GHz band-type and 1.8-2.0 GHz band-type TF-CMFs are 1,140 × 1,260 × 10.5 µm3, and 1,060 × 1,060 × 10.5 µm3, respectively. The footprint in both types of TF-CMFs is over 1 mm2. In order to miniaturize the TF-CMF, we proposed to change a polyimide-only to a polyimide with dispersed Ag nanoparticles with high permittivity in the insulator layer for the MIM capacitor of the TF-CMF. A polyimide (\\text{polyimide precursor}:\\text{toluene with dispersed Ag nanoparticles} = 100:1) thin film with dispersed high-density Ag nanoparticles has a relative permittivity of about 8, which is twice as high as that of the polyimide-only thin film. If the capacitance and distance between electrodes are the same, then the capacitor footprint may be halved.

The Electrical Double Layer and Its Structure

NASA Astrophysics Data System (ADS)

Stojek, Zbigniew

At any electrode immersed in an electrolyte solution, a specific interfacial region is formed. This region is called the double layer. The electrical properties of such a layer are important, since they significantly affect the electrochemical measurements. In an electrical circuit used to measure the current that flows at a particular working electrode, the double layer can be viewed as a capacitor. Figure I.1.1 depicts this situation where the electrochemical cell is represented by an electrical circuit and capacitor C d corresponds to the differential capacity of the double layer. To obtain a desired potential at the working electrodes, the double-layer capacitor must be first appropriately charged, which means that a capacitive current, not related to the reduction or oxidation of the substrates, flows in the electrical circuit. While this capacitive current carries some information concerning the double layer and its structure, and in some cases can be used for analytical purposes, in general, it interferes with electrochemical investigations. A variety of methods are used in electrochemistry to depress, isolate, or filter the capacitive current.

Three-dimensional structural damage localization system and method using layered two-dimensional array of capacitance sensors

NASA Technical Reports Server (NTRS)

Curry, Mark A (Inventor); Senibi, Simon D (Inventor); Banks, David L (Inventor)

2010-01-01

A system and method for detecting damage to a structure is provided. The system includes a voltage source and at least one capacitor formed as a layer within the structure and responsive to the voltage source. The system also includes at least one sensor responsive to the capacitor to sense a voltage of the capacitor. A controller responsive to the sensor determines if damage to the structure has occurred based on the variance of the voltage of the capacitor from a known reference value. A method for sensing damage to a structure involves providing a plurality of capacitors and a controller, and coupling the capacitors to at least one surface of the structure. A voltage of the capacitors is sensed using the controller, and the controller calculates a change in the voltage of the capacitors. The method can include signaling a display system if a change in the voltage occurs.

Neural circuits in Auditory and Audiovisual Memory

PubMed Central

Plakke, B.; Romanski, L.M.

2016-01-01

Working memory is the ability to employ recently seen or heard stimuli and apply them to changing cognitive context. Although much is known about language processing and visual working memory, the neurobiological basis of auditory working memory is less clear. Historically, part of the problem has been the difficulty in obtaining a robust animal model to study auditory short-term memory. In recent years there has been neurophysiological and lesion studies indicating a cortical network involving both temporal and frontal cortices. Studies specifically targeting the role of the prefrontal cortex (PFC) in auditory working memory have suggested that dorsal and ventral prefrontal regions perform different roles during the processing of auditory mnemonic information, with the dorsolateral PFC performing similar functions for both auditory and visual working memory. In contrast, the ventrolateral PFC (VLPFC), which contains cells that respond robustly to auditory stimuli and that process both face and vocal stimuli may be an essential locus for both auditory and audiovisual working memory. These findings suggest a critical role for the VLPFC in the processing, integrating, and retaining of communication information. PMID:26656069

The Application of Perfluorocarbons as Impregnants for Plastic Film Capacitors

NASA Technical Reports Server (NTRS)

Mauldin, G. H.

1981-01-01

A liquid impregnated, plastic film (wet) capacitor was developed that is thought to be the most reliable and space efficient capacitor of any type ever produced for high voltage, pulse discharge service. The initial design stores five times the energy of a premium quality dry capacitor of equivalent energy and reliability. The technology, as well as a production capacitor design using this technology are described.

Super miniaturization of film capacitor dielectrics

NASA Technical Reports Server (NTRS)

Lavene, B.

1981-01-01

The alignment of the stable electrical characteristics of film capacitors in the physical dimensions of ceramic and tantalum capacitors are discussed. The reliability of polycarbonate and mylar capacitors are described with respect to their compatibility with military specifications. Graphic illustrations are presented which show electrical and physical comparisons of film, ceramic, and tantalum capacitors. The major focus is on volumetric efficiency, weight reduction, and electrical stability.

Deviation from the law of energy equipartition in a small dynamic-random-access memory

NASA Astrophysics Data System (ADS)

Carles, Pierre-Alix; Nishiguchi, Katsuhiko; Fujiwara, Akira

2015-06-01

A small dynamic-random-access memory (DRAM) coupled with a high charge sensitivity electrometer based on a silicon field-effect transistor is used to study the law of equipartition of energy. By statistically analyzing the movement of single electrons in the DRAM at various temperature and voltage conditions in thermal equilibrium, we are able to observe a behavior that differs from what is predicted by the law of equipartition energy: when the charging energy of the capacitor of the DRAM is comparable to or smaller than the thermal energy kBT/2, random electron motion is ruled perfectly by thermal energy; on the other hand, when the charging energy becomes higher in relation to the thermal energy kBT/2, random electron motion is suppressed which indicates a deviation from the law of equipartition of energy. Since the law of equipartition is analyzed using the DRAM, one of the most familiar devices, we believe that our results are perfectly universal among all electronic devices.

Impact of N-tau on adult hippocampal neurogenesis, anxiety, and memory.

PubMed

Pristerà, Andrea; Saraulli, Daniele; Farioli-Vecchioli, Stefano; Strimpakos, Georgios; Costanzi, Marco; di Certo, Maria Grazia; Cannas, Sara; Ciotti, Maria Teresa; Tirone, Felice; Mattei, Elisabetta; Cestari, Vincenzo; Canu, Nadia

2013-11-01

Different pathological tau species are involved in memory loss in Alzheimer's disease, the most common cause of dementia among older people. However, little is known about how tau pathology directly affects adult hippocampal neurogenesis, a unique form of structural plasticity implicated in hippocampus-dependent spatial learning and mood-related behavior. To this aim, we generated a transgenic mouse model conditionally expressing a pathological tau fragment (26-230 aa of the longest human tau isoform, or N-tau) in nestin-positive stem/progenitor cells. We found that N-tau reduced the proliferation of progenitor cells in the adult dentate gyrus, reduced cell survival and increased cell death by a caspase-3-independent mechanism, and recruited microglia. Although the number of terminally differentiated neurons was reduced, these showed an increased dendritic arborization and spine density. This resulted in an increase of anxiety-related behavior and an impairment of episodic-like memory, whereas less complex forms of spatial learning remained unaltered. Understanding how pathological tau species directly affect neurogenesis is important for developing potential therapeutic strategies to direct neurogenic instructive cues for hippocampal function repair. Copyright © 2013 Elsevier Inc. All rights reserved.

On the research of time past: the hunt for the substrate of memory

PubMed Central

Queenan, Bridget N.; Ryan, Tomás J.; Gazzaniga, Michael; Gallistel, Charles R.

2017-01-01

The search for memory is one of the oldest quests in written human history. For at least two millennia, we have tried to understand how we learn and remember. We have gradually converged on the brain and looked inside it to find the basis of knowledge, the trace of memory. The search for memory has been conducted on multiple levels, from the organ to the cell to the synapse, and has been distributed across disciplines with less chronological or intellectual overlap than one might hope. Frequently, the study of the mind and its memories has been severely restricted by technological or philosophical limitations. However, in the last few years, certain technologies have emerged, offering new routes of inquiry into the basis of memory. The 2016 Kavli Futures Symposium was devoted to the past and future of memory studies. At the workshop, participants evaluated the logic and data underlying the existing and emerging theories of memory. In this paper, written in the spirit of the workshop, we briefly review the history of the hunt for memory, summarizing some of the key debates at each level of spatial resolution. We then discuss the exciting new opportunities to unravel the mystery of memory. PMID:28548457

Germinal-center development of memory B cells driven by IL-9 from follicular helper T cells.

PubMed

Wang, Yifeng; Shi, Jingwen; Yan, Jiacong; Xiao, Zhengtao; Hou, Xiaoxiao; Lu, Peiwen; Hou, Shiyue; Mao, Tianyang; Liu, Wanli; Ma, Yuanwu; Zhang, Lianfeng; Yang, Xuerui; Qi, Hai

2017-08-01

Germinal centers (GCs) support high-affinity, long-lived humoral immunity. How memory B cells develop in GCs is not clear. Through the use of a cell-cycle-reporting system, we identified GC-derived memory precursor cells (GC-MP cells) that had quit cycling and reached G0 phase while in the GC, exhibited memory-associated phenotypes with signs of affinity maturation and localized toward the GC border. After being transferred into adoptive hosts, GC-MP cells reconstituted a secondary response like genuine memory B cells. GC-MP cells expressed the interleukin 9 (IL-9) receptor and responded to IL-9. Acute treatment with IL-9 or antibody to IL-9 accelerated or retarded the positioning of GC-MP cells toward the GC edge and exit from the GC, and enhanced or inhibited the development of memory B cells, which required B cell-intrinsic responsiveness to IL-9. Follicular helper T cells (T FH cells) produced IL-9, and deletion of IL-9 from T cells or, more specifically, from GC T FH cells led to impaired memory formation of B cells. Therefore, the GC development of memory B cells is promoted by T FH cell-derived IL-9.

Performance of thin-film ferroelectric capacitors for EMC decoupling.

PubMed

Li, Huadong; Subramanyam, Guru

2008-12-01

This paper studied the effects of thin-film ferroelectrics as decoupling capacitors for electromagnetic compatibility applications. The impedance and insertion loss of PZT capacitors were measured and compared with the results from commercial off-the-shelf capacitors. An equivalent circuit model was extracted from the experimental results, and a considerable series resistance was found to exist in ferroelectric capacitors. This resistance gives rise to the observed performance difference around series resonance between ferroelectric PZT capacitors and normal capacitors. Measurements on paraelectric (Ba,Sr)TiO(3)-based integrated varactors do not show this significant resistance. Some analyses were made to investigate the mechanisms, and it was found that it can be due to the hysteresis in the ferroelectric thin films.