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Sample records for carbon doped silicon

  1. Suppression of boron-oxygen defects in Czochralski silicon by carbon co-doping

    SciTech Connect

    Wu, Yichao; Yu, Xuegong He, Hang; Chen, Peng; Yang, Deren

    2015-03-09

    We have investigated the influence of carbon co-doping on the formation of boron-oxygen defects in Czochralski silicon. It is found that carbon can effectively suppress the formation of boron-oxygen defects. Based on our experiments and first-principle theoretical calculations, it is believed that this effect is attributed to the formation of more energetically favorable carbon-oxygen complexes. Moreover, the diffusion of oxygen dimers in carbon co-doped silicon also becomes more difficult. All these phenomena should be associated with the tensile stress field induced by carbon doping in silicon.

  2. Structure and stability of a silicon cluster on sequential doping with carbon atoms

    NASA Astrophysics Data System (ADS)

    AzeezullaNazrulla, Mohammed; Joshi, Krati; Israel, S.; Krishnamurty, Sailaja

    2016-02-01

    SiC is a highly stable material in bulk. On the other hand, alloys of silicon and carbon at nanoscale length are interesting from both technological as well fundamental view point and are being currently synthesized by various experimental groups (Truong et. al., 2015 [26]). In the present work, we identify a well-known silicon cluster viz., Si10 and dope it sequentially with carbon atoms. The evolution of electronic structure (spin state and the structural properties) on doping, the charge redistribution and structural properties are analyzed. It is interesting to note that the ground state SiC clusters prefer to be in the lowest spin state. Further, it is seen that carbon atoms are the electron rich centres while silicon atoms are electron deficient in every SiC alloy cluster. The carbon-carbon bond lengths in alloy clusters are equivalent to those seen in fullerene molecules. Interestingly, the carbon atoms tend to aggregate together with silicon atoms surrounding them by donating the charge. As a consequence, very few Si-Si bonds are noted with increasing concentrations of C atoms in a SiC alloy. Physical and chemical stability of doped clusters is studied by carrying out finite temperature behaviour and adsorbing O2 molecule on Si9C and Si8C2 clusters, respectively.

  3. Silicon and aluminum doping effects on the microstructure and properties of polymeric amorphous carbon films

    NASA Astrophysics Data System (ADS)

    Liu, Xiaoqiang; Hao, Junying; Xie, Yuntao

    2016-08-01

    Polymeric amorphous carbon films were prepared by radio frequency (R.F. 13.56 MHz) magnetron sputtering deposition. The microstructure evolution of the deposited polymeric films induced by silicon (Si) and aluminum(Al) doping were scrutinized through infrared spectroscopy, multi-wavelength Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The comparative results show that Si doping can enhance polymerization and Al doping results in an increase in the ordered carbon clusters. Si and Al co-doping into polymeric films leads to the formation of an unusual dual nanostructure consisting of cross-linked polymer-like hydrocarbon chains and fullerene-like carbon clusters. The super-high elasticity and super-low friction coefficients (<0.002) under a high vacuum were obtained through Si and Al co-doping into the films. Unconventionally, the co-doped polymeric films exhibited a superior wear resistance even though they were very soft. The relationship between the microstructure and properties of the polymeric amorphous carbon films with different elements doping are also discussed in detail.

  4. CVD growth of N-doped carbon nanotubes on silicon substrates and its mechanism.

    PubMed

    He, Maoshuai; Zhou, Shuang; Zhang, Jin; Liu, Zhongfan; Robinson, Colin

    2005-05-19

    In the present study, we report the chemical vapor deposition (CVD) of nitrogen-doped (N-doped) aligned carbon nanotubes on a silicon (Si) substrate using ferrocene (Fe(C5H5)2) as catalyst and acetonitrile (CH3CN) as the carbon source. The effect of experimental conditions such as temperature, gaseous environment, and substrates on the structure and morphology of N-doped carbon nanotubes arrays is reported. From XPS and EELS data, it was found that the nitrogen content of the nanotubes could be determined over a wide range, from 1.9% to 12%, by adding the addition of hydrogen (H2) to the reaction system. It was also shown by SEM that N-doped carbon nanotube arrays could be produced on Si and SiO2 substrates at suitable temperatures, although at different growth rates. Using these concentrations, it was possible to produce three-dimensional (3D) carbon nanotubes architectures on predetermined Si/SiO2 patterns. The mechanism underlying the effect of nitrogen containing carbon sources on nanotube formation was explored using X-ray photoelectron spectroscopy (XPS).

  5. Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon

    SciTech Connect

    Chroneos, A.; Londos, C. A.; Sgourou, E. N.

    2011-11-01

    Experimental and theoretical techniques are used to investigate the impact of tin doping on the formation and the thermal stability of oxygen- and carbon-related defects in electron-irradiated Czochralski silicon. The results verify previous reports that Sn doping reduces the formation of the VO defect and suppresses its conversion to the VO{sub 2} defect. Within experimental accuracy, a small delay in the growth of the VO{sub 2} defect is observed. Regarding carbon-related defects, it is determined that Sn doping leads to a reduction in the formation of the C{sub i}O{sub i}, C{sub i}C{sub s}, and C{sub i}O{sub i}(Si{sub I}) defects although an increase in their thermal stability is observed. The impact of strain induced in the lattice by the larger tin substitutional atoms, as well as their association with intrinsic defects and carbon impurities, can be considered as an explanation to account for the above observations. The density functional theory calculations are used to study the interaction of tin with lattice vacancies and oxygen- and carbon-related clusters. Both experimental and theoretical results demonstrate that tin co-doping is an efficient defect engineering strategy to suppress detrimental effects because of the presence of oxygen- and carbon-related defect clusters in devices.

  6. Preparation of superior lubricious amorphous carbon films co-doped by silicon and aluminum

    NASA Astrophysics Data System (ADS)

    Liu, Xiaoqiang; Hao, Junying; Yang, Jun; Zheng, Jianyun; Liang, Yongmin; Liu, Weimin

    2011-09-01

    Silicon (Si) and aluminum (Al) co-doped amorphous carbon films ((Si, Al)-C:H) were deposited on Si and stainless steel substrates by radio frequency (13.56 MHz) magnetron sputtering. The Al and Si were found to jointly regulate the hybridized carbon bonds. Mechanical properties of the films were detected by nano-indention and scratch tests. The nano-indention results revealed that all the samples exhibited good elastic recovery rate, among which the highest one was beyond 84%. Besides co-regulating the hybridizations of carbon, the co-doped Si and Al also had a common regulation on the mechanical and tribological properties. Especially, the film containing 1.6 at. % of Si and 0.9 at. % of Al showed a super-low friction (< 0.01) and a superior wear resistance in ambient air.

  7. Interstitial carbon formation in irradiated copper-doped silicon

    SciTech Connect

    Yarykin, N. A.; Weber, J.

    2015-06-15

    The influence of a copper impurity on the spectrum of defects induced in p-Si crystals containing a low oxygen concentration by irradiation with electrons with an energy of 5 MeV at room temperature is studied by deep-level transient spectroscopy. It is found that interstitial carbon atoms (C{sub i}) which are the dominant defects in irradiated samples free of copper are unobservable immediately after irradiation, if the concentration of mobile interstitial copper atoms (Cu{sub i}) is higher than the concentration of radiation defects. This phenomenon is attributed to the formation of (Cu{sub i}, C{sub i}) complexes, which do not introduce levels into the lower half of the band gap. It is shown that these complexes dissociate upon annealing at temperatures of 300–340 K and, thus, bring about the appearance of interstitial carbon.

  8. Epitaxial Silicon Doped With Antimony

    NASA Technical Reports Server (NTRS)

    Huffman, James E.; Halleck, Bradley L.

    1996-01-01

    High-purity epitaxial silicon doped with antimony made by chemical vapor deposition, using antimony pentachloride (SbCI5) as source of dopant and SiH4, SiCI2H2, or another conventional source of silicon. High purity achieved in layers of arbitrary thickness. Epitaxial silicon doped with antimony needed to fabricate impurity-band-conduction photodetectors operating at wavelengths from 2.5 to 40 micrometers.

  9. Stabilization of boron carbide via silicon doping.

    PubMed

    Proctor, J E; Bhakhri, V; Hao, R; Prior, T J; Scheler, T; Gregoryanz, E; Chhowalla, M; Giulani, F

    2015-01-14

    Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping.

  10. Nitrogen-doped carbon coated silicon derived from a facile strategy with enhanced performance for lithium storage

    NASA Astrophysics Data System (ADS)

    Zeng, Lingxing; Liu, Renpin; Qiu, Heyuan; Chen, Xi; Huang, Xiaoxia; Xiong, Peixun; Qian, Qingrong; Chen, Qinghua; Wei, Mingdeng

    2016-07-01

    Silicon-based nanostructures are receiving intense interest in lithium-ion batteries (LIBs) because they have ultrahigh lithium ion storage ability. However, the fast capacity fading induced by the considerably tremendous volume changes of Si anode during the Li-ion intercalation processes as well as the low intrinsic electric conductivity have hindered its deployment. Herein, we initially developed an effective technique to synthesize the core-shell Si/nitrogen-doped carbon (Si/N‑C), composite by combining in situ interfacial polymerization and decorate with melamine, followed by carbonization. When used as anode material for LIBs, the Si/N‑C composite delivered a notable reversible capacity (1084 mAh g‑1 at 0.2 A g‑1 for 50 cycles) and high rate capability (495 mAh g‑1 at 1 A g‑1).

  11. Mechanism of formation of ultrashallow thermal donors in carbon-doped oxygen-rich monocrystalline silicon preannealed to introduce hydrogen

    NASA Astrophysics Data System (ADS)

    Hara, Akito; Awano, Teruyoshi

    2015-10-01

    We previously reported on ultrashallow thermal donors (USTDs) in carbon-doped oxygen-containing monocrystalline silicon (Czochralski-grown, CZ-Si) crystals that were preannealed to introduce hydrogen at 1300 °C, and then annealed at 480 °C. In this study, the formation mechanism of the USTDs was evaluated. It was observed that an increase in the intensity of UTSDs leads to a reduction in that of hydrogen-related shallow thermal donors [STD(H)s], and the sum of the area intensities of the lines in the transmission spectra of USTDs and STD(H)s is nearly constant when the silicon crystals are annealed for longer than 10 h at 480 °C. We also found some thermally activated processes linked to the formation of USTDs. We thus conclude that the mechanism is composed of the high-speed formation of STD(H)s in the first stage and carbon modulation of the electronic structure of STD(H)s in the second stage.

  12. The effects of silicon doping on the performance of PMAN carbon anodes in Li-ion cells

    SciTech Connect

    Guidotti, R.A.; Johnson, B.J.; Even, W. Jr.

    1996-05-01

    Carbons derived from polymethylacrylonitrile (PMAN) have been studied for use as intercalation anodes in Li-ion cells. The effect of Si doping upon the electrochemical performance of PMAN carbons was studied using tetravinylsilane (TVS) and tetramethysilane (TMS) as sources of Si during the formation of the PMAN precursors. The carbons were characterized by galvanostatic cycling, cyclic voltammetry, and complex impedance. The presence of 9 to 11 w/o Si in the PMAN lattice greatly increased the irreversible capacity of these materials.

  13. Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si:DLC) thin films

    SciTech Connect

    Ray, S.C. . E-mail: raysekhar@rediffmail.com; Okpalugo, T.I.T.; Pao, C.W.; Tsai, H.M.; Chiou, J.W.; Jan, J.C.; Pong, W.F.; Papakonstantinou, P.; McLaughlin, J.A.; Wang, W.J.

    2005-10-06

    We have investigated the electronic and bonding structure using Fourier-transform infra-red (FT-IR) spectra and studied photoluminescence (PL) from micro-Raman spectra analysis of a-C:H:Si (Si:DLC) thin films deposited by plasma enhanced chemical vapour deposition (PECVD) method. Tetramethylsilane [Si(CH{sub 3}){sub 4}, TMS] vapour was used as Silicon precursor and a bias voltage of 400 V was applied during deposition. It is observed from FT-IR spectra that with increasing TMS flow rate, the intensity of Si-H {sub n} and C-H {sub n} modes is increased significantly. PL study indicates that the PL is increased and that the PL peak position is shifted towards lower energy when the TMS flow rate increases gradually during deposition.

  14. Thermal annealing effects on photoluminescence properties of carbon-doped silicon-rich oxide thin films implanted with erbium

    NASA Astrophysics Data System (ADS)

    Nikas, Vasileios; Gallis, Spyros; Huang, Mengbing; Kaloyeros, Alain E.

    2011-05-01

    Results are presented from the photoluminescence properties of C-doped Si-rich thin film oxides implanted with Er, as investigated for various postdeposition implantation and subsequent annealing and passivation conditions. In particular, it was found that the near-infrared Er luminescence intensity can be increased by up to a factor of ˜4 after a postdeposition anneal at temperatures of 300-1100 °C. The postdeposition annealing also resulted in an enhancement of the green-red (500-600 nm) PL band associated with the film matrix. Post-Er implantation passivation in an oxygen atmosphere resulted in a gradual reduction in intensity for both the Er and matrix PLs, and led eventually to a complete quenching of both PLs at the highest passivation temperature (900 °C). In contrast, hydrogen passivation increased the matrix PL intensity by a factor up to ˜2, but was found to have negligible effects on Er PL intensity over a wide range of passivation temperatures. Analysis of Er and matrix-related PL characteristics suggests that the matrix luminescence centers are most likely the sensitizers responsible for energy transfer to Er in C-doped silicon oxides. In this context, a discussion is presented of potential types of matrix-related luminescence centers present in such materials, along with the possible mechanisms leading to differences in Er excitation and deexcitation between the C-doped Si-rich oxide films analyzed herein and commonly reported Si-rich oxide materials containing Si nanocrystals.

  15. Plasmonic Properties of Silicon Nanocrystals Doped with Boron and Phosphorus.

    PubMed

    Kramer, Nicolaas J; Schramke, Katelyn S; Kortshagen, Uwe R

    2015-08-12

    Degenerately doped silicon nanocrystals are appealing plasmonic materials due to silicon's low cost and low toxicity. While surface plasmonic resonances of boron-doped and phosphorus-doped silicon nanocrystals were recently observed, there currently is poor understanding of the effect of surface conditions on their plasmonic behavior. Here, we demonstrate that phosphorus-doped silicon nanocrystals exhibit a plasmon resonance immediately after their synthesis but may lose their plasmonic response with oxidation. In contrast, boron-doped nanocrystals initially do not exhibit plasmonic response but become plasmonically active through postsynthesis oxidation or annealing. We interpret these results in terms of substitutional doping being the dominant doping mechanism for phosphorus-doped silicon nanocrystals, with oxidation-induced defects trapping free electrons. The behavior of boron-doped silicon nanocrystals is more consistent with a strong contribution of surface doping. Importantly, boron-doped silicon nanocrystals exhibit air-stable plasmonic behavior over periods of more than a year.

  16. Effect of germanium doping on the annealing characteristics of oxygen and carbon-related defects in Czochralski silicon

    SciTech Connect

    Londos, C. A.; Andrianakis, A.; Sgourou, E. N.; Emtsev, V.; Ohyama, H.

    2010-05-15

    This paper is devoted to the annealing studies of defects produced in carbon-rich Ge-doped Czochralski-grown Si (Cz-Si) by 2 MeV electron irradiation. The annealing temperature of vacancy-oxygen (VO) complexes, carbon interstitial-oxygen interstitial (C{sub i}O{sub i}), and carbon interstitial-carbon substitutional (C{sub i}C{sub s}) pairs as well as the formation temperature of vacancy-two oxygen (VO{sub 2}) complexes are monitored as a function of Ge concentration. It has been established that the annealing of C{sub i}O{sub i} and C{sub i}C{sub s} defects remains practically unaffected by the Ge presence, whereas the annealing temperature of VO defects and the formation temperature of VO{sub 2} complexes are substantially lowered at Ge concentrations larger than 1x10{sup 19} cm{sup -3}. The hydrostatic component of elastic strains introduced by Ge atoms in the Si crystal lattice was calculated. It appears to be very small, at least insufficient to exert a pronounced effect upon the annealing behavior of radiation-produced defects. This conclusion is in line with what is observed for the C{sub i}O{sub i} and C{sub i}C{sub s} species. In the case of VO, whose annealing process in Cz-Si is concurrently conducted by two reaction paths VO+O{sub i}{yields}VO{sub 2} and VO+Si{sub I}{yields}O{sub i}, we suggest that the latter reaction in Ge-doped Cz-Si is enhanced by emitting self-interstitials (Si{sub I}) from loosely bound self-interstitial clusters predominantly formed around Ge impurity atoms. As a result, the liberation of self-interstitials at lower annealing temperatures leads to an enhanced annealing of VO defects. An enhanced formation of VO{sub 2} complexes at lower temperatures is also discussed in terms of other reactions running in parallel with the reaction VO+Si{sub I}{yields}O{sub i}.

  17. Doping silicon nanocrystals and quantum dots.

    PubMed

    Oliva-Chatelain, Brittany L; Ticich, Thomas M; Barron, Andrew R

    2016-01-28

    The ability to incorporate a dopant element into silicon nanocrystals (NC) and quantum dots (QD) is one of the key technical challenges for the use of these materials in a number of optoelectronic applications. Unlike doping of traditional bulk semiconductor materials, the location of the doping element can be either within the crystal lattice (c-doping), on the surface (s-doping) or within the surrounding matrix (m-doping). A review of the various synthetic strategies for doping silicon NCs and QDs is presented, concentrating on the efficacy of the synthetic routes, both in situ and post synthesis, with regard to the structural location of the dopant and the doping level. Methods that have been applied to the characterization of doped NCs and QDs are summarized with regard to the information that is obtained, in particular to provide researchers with a guide to the suitable techniques for determining dopant concentration and location, as well as electronic and photonic effectiveness of the dopant.

  18. Doping silicon nanocrystals and quantum dots

    NASA Astrophysics Data System (ADS)

    Oliva-Chatelain, Brittany L.; Ticich, Thomas M.; Barron, Andrew R.

    2016-01-01

    The ability to incorporate a dopant element into silicon nanocrystals (NC) and quantum dots (QD) is one of the key technical challenges for the use of these materials in a number of optoelectronic applications. Unlike doping of traditional bulk semiconductor materials, the location of the doping element can be either within the crystal lattice (c-doping), on the surface (s-doping) or within the surrounding matrix (m-doping). A review of the various synthetic strategies for doping silicon NCs and QDs is presented, concentrating on the efficacy of the synthetic routes, both in situ and post synthesis, with regard to the structural location of the dopant and the doping level. Methods that have been applied to the characterization of doped NCs and QDs are summarized with regard to the information that is obtained, in particular to provide researchers with a guide to the suitable techniques for determining dopant concentration and location, as well as electronic and photonic effectiveness of the dopant.

  19. Plasma Deposition of Doped Amorphous Silicon

    NASA Technical Reports Server (NTRS)

    Calcote, H. F.

    1985-01-01

    Pair of reports present further experimental details of investigation of plasma deposition of films of phosphorous-doped amosphous silicon. Probe measurements of electrical resistance of deposited films indicated films not uniform. In general, it appeared that resistance decreased with film thickness.

  20. Pulsed energy synthesis and doping of silicon carbide

    DOEpatents

    Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

    1995-06-20

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  1. Pulsed energy synthesis and doping of silicon carbide

    DOEpatents

    Truher, Joel B.; Kaschmitter, James L.; Thompson, Jesse B.; Sigmon, Thomas W.

    1995-01-01

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  2. Silicon Encapsulated Carbon Nanotubes

    PubMed Central

    2010-01-01

    A dual stage process of depositing bamboo-like carbon nanotubes (BCNTs) by hot filament chemical vapor deposition (HFCVD) and coating Si using Radio frequency sputtering (RFS) technique. The films were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and electron field emission studies (EFE). SEM results suggest a dense network of homogeneous silicon-coated BCNTs. From the comprehensive analysis of the results provided by these techniques emerges the picture of Si encapsulated BCNTs. PMID:20652067

  3. Nitrogen doping in carbon nanotubes.

    PubMed

    Ewels, C P; Glerup, M

    2005-09-01

    Nitrogen doping of single and multi-walled carbon nanotubes is of great interest both fundamentally, to explore the effect of dopants on quasi-1D electrical conductors, and for applications such as field emission tips, lithium storage, composites and nanoelectronic devices. We present an extensive review of the current state of the art in nitrogen doping of carbon nanotubes, including synthesis techniques, and comparison with nitrogen doped carbon thin films and azofullerenes. Nitrogen doping significantly alters nanotube morphology, leading to compartmentalised 'bamboo' nanotube structures. We review spectroscopic studies of nitrogen dopants using techniques such as X-ray photoemission spectroscopy, electron energy loss spectroscopy and Raman studies, and associated theoretical models. We discuss the role of nanotube curvature and chirality (notably whether the nanotubes are metallic or semiconducting), and the effect of doping on nanotube surface chemistry. Finally we review the effect of nitrogen on the transport properties of carbon nanotubes, notably its ability to induce negative differential resistance in semiconducting tubes.

  4. Piezoresistance and hole transport in beryllium-doped silicon.

    NASA Technical Reports Server (NTRS)

    Littlejohn, M. A.; Robertson, J. B.

    1972-01-01

    The resistivity and piezoresistance of p-type silicon doped with beryllium have been studied as a function of temperature, crystal orientation, and beryllium doping concentration. It is shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gauge factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, while the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.

  5. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOEpatents

    Corman, Gregory Scot; Luthra, Krishan Lal

    2002-01-01

    A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  6. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOEpatents

    Corman, Gregory Scot; Luthra, Krishan Lal

    1999-01-01

    A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  7. Dispersion toughened silicon carbon ceramics

    DOEpatents

    Wei, G.C.

    1984-01-01

    Fracture resistant silicon carbide ceramics are provided by incorporating therein a particulate dispersoid selected from the group consisting of (a) a mixture of boron, carbon and tungsten, (b) a mixture of boron, carbon and molybdenum, (c) a mixture of boron, carbon and titanium carbide, (d) a mixture of aluminum oxide and zirconium oxide, and (e) boron nitride. 4 figures.

  8. Magnetism and the absence of superconductivity in the praseodymium–silicon system doped with carbon and boron

    SciTech Connect

    de la Venta, J.; Basaran, Ali C.; Grant, T.; Gallardo-Amores, J. M.; Ramirez, J. G.; Alario-Franco, M. A.; Fisk, Z.; Schuller, Ivan K.

    2013-08-01

    We searched for new structural, magnetic and superconductivity phases in the Pr–Si system using high-pressure high-temperature and arc melting syntheses. Both high and low Si concentration areas of the phase diagram were explored. Although a similar approach in the La–Si system produced new stable superconducting phases, in the Pr–Si system we did not find any new superconductors. At low Si concentrations, the arc-melted samples were doped with C or B. It was found that addition of C gave rise to multiple previously unknown ferromagnetic phases. Furthermore, X-ray refinement of the undoped samples confirmed the existence of the so far elusive Pr3Si2 phase.

  9. Superlattice doped layers for amorphous silicon photovoltaic cells

    DOEpatents

    Arya, Rajeewa R.

    1988-01-12

    Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

  10. Interaction of nucleobases with silicon doped and defective silicon doped graphene and optical properties.

    PubMed

    Mudedla, Sathish Kumar; Balamurugan, Kanagasabai; Kamaraj, Manoharan; Subramanian, Venkatesan

    2016-01-01

    The interaction of nucleobases (NBs) with the surface of silicon doped graphene (SiGr) and defective silicon doped graphene (dSiGr) has been studied using electronic structure methods. A systematic comparison of the calculated interaction energies (adsorption strength) of NBs with the surface of SiGr and dSiGr with those of pristine graphene (Gr) has also been made. The doping of graphene with silicon increases the adsorption strength of NBs. The introduction of defects in SiGr further enhances the strength of interaction with NBs. The appreciable stability of complexes (SiGr-NBs and dSiGr-NBs) arises due to the partial electrostatic and covalent (Si···O(N)) interaction in addition to π-π stacking. The interaction energy increases with the size of graphene models. The strong interaction between dSiGr-NBs and concomitant charge transfer causes significant changes in the electronic structure of dSiGr in contrast to Gr and SiGr. Further, the calculated optical properties of all the model systems using time dependent density functional theory (TD-DFT) reveal that absorption spectra of SiGr and dSiGr undergo appreciable changes after adsorption of NBs. Thus, the significant variations in the HOMO-LUMO gap and absorption spectra of dSiGr after interaction with the NBs can be exploited for possible applications in the sensing of DNA nucleobases.

  11. Pyrolytic carbon coated black silicon.

    PubMed

    Shah, Ali; Stenberg, Petri; Karvonen, Lasse; Ali, Rizwan; Honkanen, Seppo; Lipsanen, Harri; Peyghambarian, N; Kuittinen, Markku; Svirko, Yuri; Kaplas, Tommi

    2016-01-01

    Carbon is the most well-known black material in the history of man. Throughout the centuries, carbon has been used as a black material for paintings, camouflage, and optics. Although, the techniques to make other black surfaces have evolved and become more sophisticated with time, carbon still remains one of the best black materials. Another well-known black surface is black silicon, reflecting less than 0.5% of incident light in visible spectral range but becomes a highly reflecting surface in wavelengths above 1000 nm. On the other hand, carbon absorbs at those and longer wavelengths. Thus, it is possible to combine black silicon with carbon to create an artificial material with very low reflectivity over a wide spectral range. Here we report our results on coating conformally black silicon substrate with amorphous pyrolytic carbon. We present a superior black surface with reflectance of light less than 0.5% in the spectral range of 350 nm to 2000 nm. PMID:27174890

  12. Pyrolytic carbon coated black silicon

    NASA Astrophysics Data System (ADS)

    Shah, Ali; Stenberg, Petri; Karvonen, Lasse; Ali, Rizwan; Honkanen, Seppo; Lipsanen, Harri; Peyghambarian, N.; Kuittinen, Markku; Svirko, Yuri; Kaplas, Tommi

    2016-05-01

    Carbon is the most well-known black material in the history of man. Throughout the centuries, carbon has been used as a black material for paintings, camouflage, and optics. Although, the techniques to make other black surfaces have evolved and become more sophisticated with time, carbon still remains one of the best black materials. Another well-known black surface is black silicon, reflecting less than 0.5% of incident light in visible spectral range but becomes a highly reflecting surface in wavelengths above 1000 nm. On the other hand, carbon absorbs at those and longer wavelengths. Thus, it is possible to combine black silicon with carbon to create an artificial material with very low reflectivity over a wide spectral range. Here we report our results on coating conformally black silicon substrate with amorphous pyrolytic carbon. We present a superior black surface with reflectance of light less than 0.5% in the spectral range of 350 nm to 2000 nm.

  13. Pyrolytic carbon coated black silicon

    PubMed Central

    Shah, Ali; Stenberg, Petri; Karvonen, Lasse; Ali, Rizwan; Honkanen, Seppo; Lipsanen, Harri; Peyghambarian, N.; Kuittinen, Markku; Svirko, Yuri; Kaplas, Tommi

    2016-01-01

    Carbon is the most well-known black material in the history of man. Throughout the centuries, carbon has been used as a black material for paintings, camouflage, and optics. Although, the techniques to make other black surfaces have evolved and become more sophisticated with time, carbon still remains one of the best black materials. Another well-known black surface is black silicon, reflecting less than 0.5% of incident light in visible spectral range but becomes a highly reflecting surface in wavelengths above 1000 nm. On the other hand, carbon absorbs at those and longer wavelengths. Thus, it is possible to combine black silicon with carbon to create an artificial material with very low reflectivity over a wide spectral range. Here we report our results on coating conformally black silicon substrate with amorphous pyrolytic carbon. We present a superior black surface with reflectance of light less than 0.5% in the spectral range of 350 nm to 2000 nm. PMID:27174890

  14. Heavy doping effects in high efficiency silicon solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.

    1984-01-01

    Several of the key parameters describing the heavily doped regions of silicon solar cells are examined. The experimentally determined energy gap narrowing and minority carrier diffusivity and mobility are key factors in the investigation.

  15. Silicon doping system at the research reactor FRM II.

    PubMed

    Li, X; Gerstenberg, H; Neuhaus, I

    2009-01-01

    Silicon doping has being carried out at FRM II since 2 years. During the commissioning of our new reactor, a simple test rig was used to determine the neutron flux profile at the irradiation position and optimise a nickel absorber liner, which is equipped at the irradiation position for vertical smoothing of the neutron flux profile. MCNP-code was used during the design of the liner. The final automatic doping system is designed to allow the irradiation of cylindrical silicon single crystals 500mm high and up to 200mm in diameter. Silicon ingots are additionally rotated continuously about their own cylinder axis during irradiation. The neutron flux density is measured online by using self-powered-neutron (SPN) detectors. The necessary doping homogeneity of +/-5% is achieved. The doping procedure and doping quality of ingots with high target resistivity are also discussed. PMID:19324563

  16. Laser doping for high-efficiency silicon solar cells

    NASA Astrophysics Data System (ADS)

    Jäger, Ulrich; Wolf, Andreas; Steinhauser, Bernd; Benick, Jan; Nekarda, Jan; Preu, Ralf

    2012-10-01

    Selective laser doping is a versatile tool for the local adaption of doping profiles in a silicon substrate. By adjusting the laser fluence as well as the pulse width the maximum melt depth in the silicon can be controlled. Longer pulses lead to lower temperatures in the material and can help to enlarge the process window as ablation sets in at higher fluencies. For the fabrication of highly efficient silicon solar cells, laser doping can be used for efficiency improvement and process simplification. In passivated emitter and rear cells (PERC), selective laser doping can be used for selective emitter formation. Employing such a process, an efficiency boost of Δ ƞ= 0.4%abs was observed on commercial Cz-Si material. Laser doping was also used for process simplification for the fabrication of locally doped point contacts at the rear of a solar cell. A simple approach employing a doped passivation layer and a laser doping process allows for efficiencies beyond 22% on high quality n-type silicon.

  17. Growth of silicon-doped Al0.6Ga0.4N with low carbon concentration at high growth rate using high-flow-rate metal organic vapor phase epitaxy reactor

    NASA Astrophysics Data System (ADS)

    Ikenaga, Kazutada; Mishima, Akira; Yano, Yoshiki; Tabuchi, Toshiya; Matsumoto, Koh

    2016-05-01

    The relationship between the carbon concentration and electrical characteristics of silicon-doped AlGaN (Al > 0.5) was investigated using a high-flow-rate metal organic vapor phase epitaxy (MOVPE) reactor. The carbon concentration and electrical properties of AlGaN (Al > 0.5) were measured as a function of the growth rate, V/III ratio, and growth temperature. The growth rate of Al0.6Ga0.4N was linearly controlled up to 7.2 µm/h under a constant ammonia (NH3) flow rate. However, a decrease in V/III ratio resulted in an increase in carbon concentration to 8 × 1017 cm-3. With increased growth temperature, the carbon concentration decreased to less than 2 × 1017 cm-3 without showing any reduction in growth rate. As a result, n-type Al0.6Ga0.4N with a carrier concentration of 5.4 × 1018 cm-3 and a resistivity of 2.2 × 10-2 Ω·cm was obtained.

  18. Excess carbon in silicon carbide

    SciTech Connect

    Shen, X; Oxley, Mark P.; Puzyrev, Y; Tuttle, B R; Duscher, Gerd; Pantelides, Sokrates T.

    2010-01-01

    The application of SiC in electronic devices is currently hindered by low carrier mobility at the SiC/SiO{sub 2} interfaces. Recently, it was reported that 4H-SiC/SiO{sub 2} interfaces might have a transition layer on the SiC substrate side with C/Si ratio as high as 1.2, suggesting that carbon is injected into the SiC substrate during oxidation or other processing steps. We report finite-temperature quantum molecular dynamics simulations that explore the behavior of excess carbon in SiC. For SiC with 20% excess carbon, we find that, over short time ({approx} 24 ps), carbon atoms bond to each other and form various complexes, while the silicon lattice is largely unperturbed. These results, however, suggest that at macroscopic times scale, C segregation is likely to occur; therefore a transition layer with 20% extra carbon would not be stable. For a dilute distribution of excess carbon, we explore the pairing of carbon interstitials and show that the formation of dicarbon interstitial cluster is kinetically very favorable, which suggests that isolated carbon clusters may exist inside SiC substrate.

  19. Magnetism in transition-metal-doped silicon nanotubes.

    PubMed

    Singh, Abhishek Kumar; Briere, Tina M; Kumar, Vijay; Kawazoe, Yoshiyuki

    2003-10-01

    Using first-principles density functional calculations, we show that hexagonal metallic silicon nanotubes can be stabilized by doping with 3d transition metal atoms. Finite nanotubes doped with Fe and Mn have high local magnetic moments, whereas Co-doped nanotubes have low values and Ni-doped nanotubes are mostly nonmagnetic. The infinite Si24Fe4 nanotube is found to be ferromagnetic with nearly the same local magnetic moment on each Fe atom as in bulk iron. Mn-doped nanotubes are antiferromagnetic, but a ferrromagnetic state lies only 0.03 eV higher in energy with a gap in the majority spin bands near the Fermi energy. These materials are interesting for silicon-based spintronic devices and other nanoscale magnetic applications.

  20. Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride

    NASA Astrophysics Data System (ADS)

    Wang, Hongzhe; Chen, Chao; Pan, Miao; Sun, Yiling; Yang, Xi

    2015-12-01

    This study reports a doubling of the effective minority carrier lifetime under light soaking conditions, observed in a boron-doped p-type Czochralski grown silicon wafer passivated by a phosphorus-doped silicon nitride thin film. The analysis of capacitance-voltage curves revealed that the fixed charge in this phosphorus-doped silicon nitride film was negative, which was unlike the well-known positive fixed charges observed in traditional undoped silicon nitride. The analysis results revealed that the enhancement phenomenon of minority carrier lifetime was caused by the abrupt increase in the density of negative fixed charge (from 7.2 × 1011 to 1.2 × 1012 cm-2) after light soaking.

  1. Vibrational spectra and structures of neutral Si(m)C(n) clusters (m + n = 6): sequential doping of silicon clusters with carbon atoms.

    PubMed

    Savoca, Marco; Lagutschenkov, Anita; Langer, Judith; Harding, Dan J; Fielicke, André; Dopfer, Otto

    2013-02-14

    Vibrational spectra of mixed silicon carbide clusters Si(m)C(n) with m + n = 6 in the gas phase are obtained by resonant infrared-vacuum-ultraviolet two-color ionization (IR-UV2CI for n ≤ 2) and density functional theory (DFT) calculations. Si(m)C(n) clusters are produced in a laser vaporization source, in which the silicon plasma reacts with methane. Subsequently, they are irradiated with tunable IR light from an IR free electron laser before they are ionized with UV photons from an F(2) laser. Resonant absorption of one or more IR photons leads to an enhanced ionization efficiency for Si(m)C(n) and provides the size-specific IR spectra. IR spectra measured for Si(6), Si(5)C, and Si(4)C(2) are assigned to their most stable isomers by comparison with calculated linear absorption spectra. The preferred Si(m)C(n) structures with m + n = 6 illustrate the systematic transition from chain-like geometries for bare C(6) to three-dimensional structures for bare Si(6). In contrast to bulk SiC, carbon atom segregation is observed already for the smallest n (n = 2).

  2. High-energy electron-induced damage production at room temperature in aluminum-doped silicon

    NASA Technical Reports Server (NTRS)

    Corbett, J. W.; Cheng, L. J.; Jaworowski, A.; Karins, J. P.; Lee, Y. H.; Lindstroem, L.; Mooney, P. M.; Oehrlen, G.; Wang, K. L.

    1979-01-01

    DLTS and EPR measurements are reported on aluminum-doped silicon that was irradiated at room temperature with high-energy electrons. Comparisons are made to comparable experiments on boron-doped silicon. Many of the same defects observed in boron-doped silicon are also observed in aluminum-doped silicon, but several others were not observed, including the aluminum interstitial and aluminum-associated defects. Damage production modeling, including the dependence on aluminum concentration, is presented.

  3. Theoretical exploration of structural, electro-optical and magnetic properties of gallium-doped silicon carbide nanotubes

    NASA Astrophysics Data System (ADS)

    Behzad, Somayeh; Chegel, Raad; Moradian, Rostam; Shahrokhi, Masoud

    2014-09-01

    The effects of gallium doping on the structural, electro-optical and magnetic properties of (8,0) silicon carbide nanotube (SiCNT) are investigated by using spin-polarized density functional theory. It is found from the calculation of the formation energies that gallium substitution for silicon atom is preferred. Our results show that gallium substitution at either single carbon or silicon atom site in SiCNT could induce spontaneous magnetization. The optical studies based on dielectric function indicate that new transition peaks and a blue shift are observed after gallium doping.

  4. Deep Trench Doping by Plasma Immersion Ion Implantation in Silicon

    SciTech Connect

    Nizou, S.; Vervisch, V.; Etienne, H.; Torregrosa, F.; Roux, L.; Ziti, M.; Alquier, D.; Roy, M.

    2006-11-13

    The realization of three dimensional (3D) device structures remains a great challenge in microelectronics. One of the main technological breakthroughs for such devices is the ability to control dopant implantation along silicon trench sidewalls. Plasma Immersion Ion Implantation (PIII) has shown its wide efficiency for specific doping processing in semiconductor applications. In this work, we propose to study the capability of PIII method for large scale silicon trench doping. Ultra deep trenches with high aspect ratio were etched on 6'' N type Si wafers. Wafers were then implanted with a PIII Pulsion system using BF3 gas source at various pressures and energies. The obtained results evidence that PIII can be used and are of grateful help to define optimized processing conditions to uniformly dope silicon trench sidewalls through the wafers.

  5. Properties of Neutron Doped Multicrystalline Silicon for Solar Cells

    NASA Astrophysics Data System (ADS)

    Pochrybniak, C.; Pytel, K.; Milczarek, J. J.; Jaroszewicz, J.; Lipiński, M.; Piotrowski, T.; Kansy, J.

    2008-04-01

    The technology of neutron transmutation doping of silicon wafers in MARIA nuclear research reactor is described. The studies of the radiation defects performed with positron annihilation confirmed that divacancies dominate in the irradiated material. Thermal treatment of irradiated silicon at 700-1000°C produces void-phosphorus complexes and void aggregates. The resistivity of the samples produced by neutron transmutation doping was found to be uniform within 2.5% limits. The severe reduction of the minority carrier lifetime in irradiated samples was confirmed.

  6. Origins of conductivity improvement in fluoride-enhanced silicon doping of ZnO films.

    PubMed

    Rashidi, Nazanin; Vai, Alex T; Kuznetsov, Vladimir L; Dilworth, Jonathan R; Edwards, Peter P

    2015-06-01

    Fluoride in spray pyrolysis precursor solutions for silicon-doped zinc oxide (SiZO) transparent conductor thin films significantly improves their electrical conductivity by enhancing silicon doping efficiency and not, as previously assumed, by fluoride doping. Containing only earth-abundant elements, SiZO thus prepared rivals the best solution-processed indium-doped ZnO in performance. PMID:25879727

  7. Origins of conductivity improvement in fluoride-enhanced silicon doping of ZnO films.

    PubMed

    Rashidi, Nazanin; Vai, Alex T; Kuznetsov, Vladimir L; Dilworth, Jonathan R; Edwards, Peter P

    2015-06-01

    Fluoride in spray pyrolysis precursor solutions for silicon-doped zinc oxide (SiZO) transparent conductor thin films significantly improves their electrical conductivity by enhancing silicon doping efficiency and not, as previously assumed, by fluoride doping. Containing only earth-abundant elements, SiZO thus prepared rivals the best solution-processed indium-doped ZnO in performance.

  8. Does water dope carbon nanotubes?

    SciTech Connect

    Bell, Robert A.; Payne, Michael C.; Mostofi, Arash A.

    2014-10-28

    We calculate the long-range perturbation to the electronic charge density of carbon nanotubes (CNTs) as a result of the physisorption of a water molecule. We find that the dominant effect is a charge redistribution in the CNT due to polarisation caused by the dipole moment of the water molecule. The charge redistribution is found to occur over a length-scale greater than 30 Å, highlighting the need for large-scale simulations. By comparing our fully first-principles calculations to ones in which the perturbation due to a water molecule is treated using a classical electrostatic model, we estimate that the charge transfer between CNT and water is negligible (no more than 10{sup −4} e per water molecule). We therefore conclude that water does not significantly dope CNTs, a conclusion that is consistent with the poor alignment of the relevant energy levels of the water molecule and CNT. Previous calculations that suggest water n-dopes CNTs are likely due to the misinterpretation of Mulliken charge partitioning in small supercells.

  9. Infrared luminescence from spark-processed silicon and erbium-doped spark-processed silicon

    NASA Astrophysics Data System (ADS)

    Kim, Kwanghoon

    Spark-processed silicon has substantial potential as an optical material. In the past 15 years, our group has investigated a multitude of properties of this unique material, concentrating mostly on the visible and near UV spectral region. The present study expands our endeavors to infrared photoluminescence (PL) of undoped spark-processed silicon. A broad infrared photoluminescence peak at around 945 nm under Ar ion laser excitation was observed at room temperature when investigating a spark-processed layer on a silicon wafer. This light emission is interpreted to be the result of energy transfers between certain energy levels involving the spark-processed silicon matrix. The infrared PL intensity of spark-processed silicon was found to be proportional to the excitation energy. However, telecommunication requires presently a light emission near 1.54 mum (because fiber-optics "conductors" have a minimum in absorption at this wavelength). This cannot be achieved with pure spark-processed silicon. Therefore spark-processed silicon needs to be doped with a rare-earth element such as erbium to shift the emission to longer wavelengths. It is known that erbium has a light emission from intrashell energy transition, that is, from 4I13/2 →4I15/2. Erbium was deposited on a silicon wafer followed by spark-processing, which enables diffusion of some erbium into the SiOx matrix, thus achieving opto-electronically active spark-processed silicon. Rapid thermal annealing enhances the 1.54 mum wavelength intensity from erbium-doped spark-processed silicon. The processing conditions that result in the most efficient photoluminescence have been established and will be presented in this dissertation. In contrast to erbium-doped crystalline silicon, whose light emission is highly affected by temperature (103 times reduction in intensity when heating from 12 K to 150 K), the intensity of erbium-doped spark-processed silicon decreases by only a factor of 4 when heated from 15 K to room

  10. Superconductivity in carrier-doped silicon carbide

    NASA Astrophysics Data System (ADS)

    Muranaka, Takahiro; Kikuchi, Yoshitake; Yoshizawa, Taku; Shirakawa, Naoki; Akimitsu, Jun

    2008-12-01

    We report growth and characterization of heavily boron-doped 3C-SiC and 6H-SiC and Al-doped 3C-SiC. Both 3C-SiC:B and 6H-SiC:B reveal type-I superconductivity with a critical temperature Tc=1.5 K. On the other hand, Al-doped 3C-SiC (3C-SiC:Al) shows type-II superconductivity with Tc=1.4 K. Both SiC:Al and SiC:B exhibit zero resistivity and diamagnetic susceptibility below Tc with effective hole-carrier concentration n higher than 1020 cm-3. We interpret the different superconducting behavior in carrier-doped p-type semiconductors SiC:Al, SiC:B, Si:B and C:B in terms of the different ionization energies of their acceptors.

  11. Preparation of nitrogen-doped carbon tubes

    SciTech Connect

    Chung, Hoon Taek; Zelenay, Piotr

    2015-12-22

    A method for synthesizing nitrogen-doped carbon tubes involves preparing a solution of cyanamide and a suitable transition metal-containing salt in a solvent, evaporating the solvent to form a solid, and pyrolyzing the solid under an inert atmosphere under conditions suitable for the production of nitrogen-doped carbon tubes from the solid. Pyrolyzing for a shorter period of time followed by rapid cooling resulted in a tubes with a narrower average diameter.

  12. Polarization doping of graphene on silicon carbide

    NASA Astrophysics Data System (ADS)

    Mammadov, Samir; Ristein, Jürgen; Koch, Roland J.; Ostler, Markus; Raidel, Christian; Wanke, Martina; Vasiliauskas, Remigijus; Yakimova, Rositza; Seyller, Thomas

    2014-12-01

    The doping of quasi-freestanding graphene (QFG) on H-terminated, Si-face 6H-, 4H-, and 3C-SiC is studied by angle-resolved photoelectron spectroscopy close to the Dirac point. Using semi-insulating as well as n-type doped substrates we shed light on the contributions to the charge carrier density in QFG caused by (i) the spontaneous polarization of the substrate, and (ii) the band alignment between the substrate and the graphene layer. In this way we provide quantitative support for the previously suggested model of polarization doping of graphene on SiC (Ristein et al 2012 Phys. Rev. Lett. 108 246104).

  13. Size dependence of phosphorus doping in silicon nanocrystals

    NASA Astrophysics Data System (ADS)

    He, Wei; Li, Zhengping; Wen, Chao; Liu, Hong; Shen, Wenzhong

    2016-10-01

    Doping of silicon nanocrystals (Si-NCs) is one of the major challenges for silicon nanoscale devices. In this work, phosphorus (P) doping in Si-NCs which are embedded within an amorphous silicon matrix is realized together with the growth of Si-NCs by plasma-enhanced chemical vapor deposition under a tunable substrate direct current (DC) bias. The variation of phosphorus concentration with substrate bias can be explained by the competition of bonding processes of Si–Si and P–Si bonds. The formation of Si–Si and P–Si bonds is differently influenced by the ion bombardment controlled by the substrate bias, due to their bonding energy difference. We have studied the influences of grain size on P doping in Si-NCs. Free carrier concentration, which is provided by activated P atoms, decreases with decreasing grain size due to increasing formation energy and activation energy of P atoms incorporated in Si-NCs. Furthermore, we have studied the P locations inside Si-NCs and hydrogen passivation of P in the form of P–Si–H complexes using the first-principles method. Hydrogen passivation of P can also contribute to the reduced free carrier concentration in smaller Si-NCs. These results provide valuable understanding of P doping in Si-NCs.

  14. Size dependence of phosphorus doping in silicon nanocrystals.

    PubMed

    He, Wei; Li, Zhengping; Wen, Chao; Liu, Hong; Shen, Wenzhong

    2016-10-21

    Doping of silicon nanocrystals (Si-NCs) is one of the major challenges for silicon nanoscale devices. In this work, phosphorus (P) doping in Si-NCs which are embedded within an amorphous silicon matrix is realized together with the growth of Si-NCs by plasma-enhanced chemical vapor deposition under a tunable substrate direct current (DC) bias. The variation of phosphorus concentration with substrate bias can be explained by the competition of bonding processes of Si-Si and P-Si bonds. The formation of Si-Si and P-Si bonds is differently influenced by the ion bombardment controlled by the substrate bias, due to their bonding energy difference. We have studied the influences of grain size on P doping in Si-NCs. Free carrier concentration, which is provided by activated P atoms, decreases with decreasing grain size due to increasing formation energy and activation energy of P atoms incorporated in Si-NCs. Furthermore, we have studied the P locations inside Si-NCs and hydrogen passivation of P in the form of P-Si-H complexes using the first-principles method. Hydrogen passivation of P can also contribute to the reduced free carrier concentration in smaller Si-NCs. These results provide valuable understanding of P doping in Si-NCs. PMID:27632417

  15. Size dependence of phosphorus doping in silicon nanocrystals.

    PubMed

    He, Wei; Li, Zhengping; Wen, Chao; Liu, Hong; Shen, Wenzhong

    2016-10-21

    Doping of silicon nanocrystals (Si-NCs) is one of the major challenges for silicon nanoscale devices. In this work, phosphorus (P) doping in Si-NCs which are embedded within an amorphous silicon matrix is realized together with the growth of Si-NCs by plasma-enhanced chemical vapor deposition under a tunable substrate direct current (DC) bias. The variation of phosphorus concentration with substrate bias can be explained by the competition of bonding processes of Si-Si and P-Si bonds. The formation of Si-Si and P-Si bonds is differently influenced by the ion bombardment controlled by the substrate bias, due to their bonding energy difference. We have studied the influences of grain size on P doping in Si-NCs. Free carrier concentration, which is provided by activated P atoms, decreases with decreasing grain size due to increasing formation energy and activation energy of P atoms incorporated in Si-NCs. Furthermore, we have studied the P locations inside Si-NCs and hydrogen passivation of P in the form of P-Si-H complexes using the first-principles method. Hydrogen passivation of P can also contribute to the reduced free carrier concentration in smaller Si-NCs. These results provide valuable understanding of P doping in Si-NCs.

  16. Low temperature coefficient of resistance and high gage factor in beryllium-doped silicon

    NASA Technical Reports Server (NTRS)

    Robertson, J. B.; Littlejohn, M. A.

    1974-01-01

    The gage factor and resistivity of p-type silicon doped with beryllium was studied as a function of temperature, crystal orientation, and beryllium doping concentration. It was shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gage factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, whereas the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.

  17. Comment on ``Electron drift mobility in doped amorphous silicon''

    NASA Astrophysics Data System (ADS)

    Overhof, H.; Silver, M.

    1989-05-01

    Experimental drift-mobility data obtained by different methods in doped amorphous silicon are compared. It is shown that the presence of a long-range random potential will lead to a modification of the drift mobility in one experiment while the corresponding values in other experiments are virtually unaffected. It is shown that this effect accounts for the apparent discrepancy between the results of these experiments rather than the shift of the mobility edge upon doping which was recently proposed by Street, Kakalios, and Hack [Phys. Rev. B 38, 5603 (1988)] in order to understand their data.

  18. Transport properties for carbon chain sandwiched between heteroatom-doped carbon nanotubes with different doping sites

    NASA Astrophysics Data System (ADS)

    Liu, Wenjiang; Deng, Xiaoqing; Cai, Shaohong

    2016-07-01

    The First-principles calculation is used to investigate the transport properties of a carbon chain connected with N-and/or B-doped caped carbon nanotube acting as electrodes. The I-V curves of the carbon chain are affected by the N/B doping sites, and rectifying behavior can be obtained distinctly when the carbon chain is just connected onto two doping atom sites (N- chain-B), and a weak rectification occurs when N (B) doping at other sites. Interestingly, the spin-filtering effects exist in the junction when it is doped at other sites, undoped system, or N-terminal carbon chains. However, no this behavior is found in N-chain-B and B-chain-B systems. The analysis on the transmission spectra, PDOS, LDOS, spin density, and the electron transmission pathways give an insight into the observed results for the system.

  19. Determination of surface recombination velocity in heavily doped silicon

    NASA Technical Reports Server (NTRS)

    Watanabe, M.; Gatos, H. C.; Actor, G.

    1976-01-01

    A method was developed and successfully tested for the determination of the effective surface recombination velocity of silicon layers doped by diffusion of phosphorus to a level of 10 to the 19th to 10 to the 21st per cu cm. The effective recombination velocity was obtained from the dependence of the electron-beam-induced current on the penetration of the electron beam of a scanning electron microscope. A special silicon diode was constructed which permitted the collection at the p-n junction of the carriers excited by the electron beam. This diode also permitted the study of the effects of surface preparation on the effective surface recombination velocity.

  20. Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors

    NASA Astrophysics Data System (ADS)

    Li, Jingqi; Wang, Qingxiao; Yue, Weisheng; Guo, Zaibing; Li, Liang; Zhao, Chao; Wang, Xianbin; Abutaha, Anas I.; Alshareef, H. N.; Zhang, Yafei; Zhang, X. X.

    2014-07-01

    Single-walled carbon nanotubes have been integrated into silicon for use in vertical carbon nanotube field-effect transistors (CNTFETs). A unique feature of these devices is that a silicon substrate and a metal contact are used as the source and drain for the vertical transistors, respectively. These CNTFETs show very different characteristics from those fabricated with two metal contacts. Surprisingly, the transfer characteristics of the vertical CNTFETs can be either ambipolar or unipolar (p-type or n-type) depending on the sign of the drain voltage. Furthermore, the p-type/n-type character of the devices is defined by the doping type of the silicon substrate used in the fabrication process. A semiclassical model is used to simulate the performance of these CNTFETs by taking the conductance change of the Si contact under the gate voltage into consideration. The calculation results are consistent with the experimental observations.Single-walled carbon nanotubes have been integrated into silicon for use in vertical carbon nanotube field-effect transistors (CNTFETs). A unique feature of these devices is that a silicon substrate and a metal contact are used as the source and drain for the vertical transistors, respectively. These CNTFETs show very different characteristics from those fabricated with two metal contacts. Surprisingly, the transfer characteristics of the vertical CNTFETs can be either ambipolar or unipolar (p-type or n-type) depending on the sign of the drain voltage. Furthermore, the p-type/n-type character of the devices is defined by the doping type of the silicon substrate used in the fabrication process. A semiclassical model is used to simulate the performance of these CNTFETs by taking the conductance change of the Si contact under the gate voltage into consideration. The calculation results are consistent with the experimental observations. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr00978a

  1. Determination of the Structures of Silicon and Metal Doped Silicon Clusters

    NASA Astrophysics Data System (ADS)

    Lyon, Jonathan T.; Fielicke, Andre; Janssens, Ewald; Lievens, Peter

    2014-06-01

    Strongly bound clusters are often used as convenient models for bulk material. Silicon clusters are particularly interesting due to their importance in the electronics industry. We perform experimental IR multiple photon dissociation spectroscopy in the gas-phase, which makes use of a free electron laser, and compare the results with that predicted by density functional and MP2 theory calculations. Comparison of the vibrational spectra with that predicted by theoretical calculations for several structural isomers for each cluster size leads to accurate structural assignments. Here, we present our results for silicon clusters, and compare the structures with those of select transition metal doped SinM clusters. Of particular interest is the transition from exohedral to endoheral metal doped silicon clusters and how the transition size changes for different metal dopant atoms. Journal of Chemical Physics 2012, 136, 064301 e.g., ChemPhysChem 2014, 15, 328.

  2. Identification of photoluminescence P line in indium doped silicon as In{sub Si}-Si{sub i} defect

    SciTech Connect

    Lauer, Kevin Möller, Christian; Schulze, Dirk; Ahrens, Carsten

    2015-01-15

    Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line) was found to depend on the position of a silicon interstitial rich region, the existence of a SiN{sub x}:H/SiO{sub x} stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetime in indium as well as boron doped silicon. We deduced a defect model consisting of one acceptor and one silicon interstitial atom denoted by A{sub Si}-Si{sub i}, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron doped silicon. Using this model we identified the defect responsible for the P line as In{sub Si}-Si{sub i} in neutral charge state and C{sub 2v} configuration.

  3. Integration of a carbon nanotube based electrode in silicon microtechnology to fabricate electrochemical transducers

    NASA Astrophysics Data System (ADS)

    Luais, E.; Boujtita, M.; Gohier, A.; Tailleur, A.; Casimirius, S.; Djouadi, M. A.; Granier, A.; Tessier, P. Y.

    2008-10-01

    An original approach was developed and validated for the fabrication of a carbon nanotube (CNT) electrode synthesized directly onto a carbon buffer thin film deposited on a highly doped monocrystalline silicon surface. The buffer layer of amorphous carbon thin film was deposited by physical vapour deposition on the silicon substrate before CNT synthesis. For this purpose, nickel was deposited on the carbon buffer layer by an electrochemical procedure and used as a catalyst for the CNT growth. The CNT synthesis was achieved by plasma enhanced chemical vapour deposition (PECVD) in an electron cyclotron resonance (ECR) plasma chamber using a C2H2/NH3 gas mixture. In order to evaluate the electrochemical behaviour of the CNT-based electrode, the carbon layer and the silicon/carbon interface were studied. The resulting buffer layer enhanced the electronic transport from the doped silicon to the CNTs. The electrode surface was studied by XPS and characterized by both SEM and TEM. The electrochemical response exhibited by the resulting electrodes modified with CNTs was also examined by cyclic voltammetry. The whole process was found to be compatible with silicon microtechnology and could be envisaged for the direct integration of microsensors on silicon chips.

  4. Integration of a carbon nanotube based electrode in silicon microtechnology to fabricate electrochemical transducers.

    PubMed

    Luais, E; Boujtita, M; Gohier, A; Tailleur, A; Casimirius, S; Djouadi, M A; Granier, A; Tessier, P Y

    2008-10-29

    An original approach was developed and validated for the fabrication of a carbon nanotube (CNT) electrode synthesized directly onto a carbon buffer thin film deposited on a highly doped monocrystalline silicon surface. The buffer layer of amorphous carbon thin film was deposited by physical vapour deposition on the silicon substrate before CNT synthesis. For this purpose, nickel was deposited on the carbon buffer layer by an electrochemical procedure and used as a catalyst for the CNT growth. The CNT synthesis was achieved by plasma enhanced chemical vapour deposition (PECVD) in an electron cyclotron resonance (ECR) plasma chamber using a C(2)H(2)/NH(3) gas mixture. In order to evaluate the electrochemical behaviour of the CNT-based electrode, the carbon layer and the silicon/carbon interface were studied. The resulting buffer layer enhanced the electronic transport from the doped silicon to the CNTs. The electrode surface was studied by XPS and characterized by both SEM and TEM. The electrochemical response exhibited by the resulting electrodes modified with CNTs was also examined by cyclic voltammetry. The whole process was found to be compatible with silicon microtechnology and could be envisaged for the direct integration of microsensors on silicon chips. PMID:21832696

  5. Superlattice-doped silicon detectors: progress and prospects

    NASA Astrophysics Data System (ADS)

    Hoenk, Michael E.; Nikzad, Shouleh; Carver, Alexander G.; Jones, Todd J.; Hennessy, John; Jewell, April D.; Sgro, Joseph; Tsur, Shraga; McClish, Mickel; Farrell, Richard

    2014-07-01

    In this paper we review the physics and performance of silicon detectors passivated with wafer-scale molecular beam epitaxy (MBE) and atomic layer deposition (ALD). MBE growth of a two-dimensional (2D) doping superlattice on backside-illuminated (BSI) detectors provides nearly perfect protection from interface traps, even at trap densities in excess of 1014 cm-2. Superlattice-doped, BSI CMOS imaging detectors show no measurable degradation of quantum efficiency or dark current from long-term exposure to pulsed DUV lasers. Wafer-scale superlattice-doping has been used to passivate CMOS and CCD imaging arrays, fully-depleted CCDs and photodiodes, and large-area avalanche photodiodes. Superlattice-doped CCDs with ALD-grown antireflection coatings achieved world record quantum efficiency at deep and far ultraviolet wavelengths (100-300nm). Recently we have demonstrated solar-blind, superlattice doped avalanche photodiodes using integrated metal-dielectric coatings to achieve selective detection of ultraviolet light in the 200-250 nm spectral range with high out-of-band rejection.

  6. Optical properties of rare-earth-doped silicon nanocomposites

    NASA Astrophysics Data System (ADS)

    Hryciw, Aaron Christopher

    Silicon-based light-emitting materials show much promise for integrated photonics applications. In particular, nanocrystalline silicon can exhibit efficient visible emission, though the mechanism of luminescence is still the subject of some controversy. This thesis reports on the optical properties and device applications of silicon nanocomposite thin films with varying characteristics: amorphous and crystalline nanoclusters (NCs), both undoped and doped with rare-earth (RE) elements. Silicon nanocomposite thin films can be prepared by co-evaporation of Si, SiO, and/or SiO2 followed by annealing to induce phase separation. Such films typically exhibit a broad photoluminescence (PL) band centred between ˜600-800 nm. RE-doped a-Si-NC films can exhibit relatively sharp emission in the near infrared, with excitation cross-sections on the order of 10 -16 cm2 due to the sensitisation effect of the Si NCs---an increase in excitation efficiency by over five orders of magnitude compared with typical values for RE-doped SiO2. Er3+ in particular is important due to its emission at 1.5 mum, corresponding to the wavelength of minimum attenuation in conventional silica optical fibres. To demonstrate control over the spectral width and centre wavelength of emission for photonic applications, undoped and RE-doped a-Si-NC films have been incorporated into optical resonator structures (microcavities) with Ag mirrors. For a-Si films, the emission is tunable from 475 to 875 nm, extendable to 1630 nm upon the addition of Er. It is well known that Si NCs are capable of efficient energy transfer to many of the RE3+ ions; the specific nature of the non-radiative transfer process, however, has not been established with certainty. Efficient nanocluster-mediated excitation has been demonstrated for Nd-, Tb-, Dy-, Er-, Tm-, and Yb-doped a-Si-NC films. From luminescence modelling of ensembles of a-Si NCs, the observed quenching with increased annealing temperature can be accounted for by

  7. Synthesis and Doping of Silicon Nanocrystals for Versatile Nanocrystal Inks

    NASA Astrophysics Data System (ADS)

    Kramer, Nicolaas Johannes

    atmospheric pressures necessitates high plasma densities to reach temperatures required for crystallization of nanoparticles. Using experimentally determined plasma properties from the literature, the model estimates the nanoparticle temperature that is achieved during synthesis at atmospheric pressures. It was found that temperatures well above those required for crystallization can be achieved. Now that the synthesis of nanocrystals is understood, the second half of this thesis will focus on doping of the nanocrystals. The doping of semiconductor nanocrystals, which is vital for the optimization of nanocrystal-based devices, remains a challenge. Gas phase plasma approaches have been very successful in incorporating dopant atoms into nanocrystals by simply adding a dopant precursor during synthesis. However, little is known about the electronic activation of these dopants. This was investigated with field-effect transistor measurements using doped silicon nanocrystal films. It was found that, analogous to bulk silicon, boron and phosphorous electronically dope silicon nanocrystals. However, the dopant activation efficiency remains low as a result of self-purification of the dopants to the nanocrystal surface. Next the plasmonic properties of heavily doped silicon nanocrystals was explored. While the synthesis method was identical, the plasmonic behavior of phosphorus-doped and boron-doped nanocrystals was found the be significantly different. Phosphorus-doped nanocrystals exhibit a plasmon resonance immediately after synthesis, while boron-doped nanocrystals require a post-synthesis annealing or oxidation treatment. This is a result of the difference in dopant location. Phosphorus is more likely to be incorporated into the core of the nanocrystal, while the majority of boron is placed on the surface of the nanocrystal. The oxidized boron-doped particles exhibit stable plasmonic properties, and therefore this allows for the production of air-stable silicon-based plasmonic

  8. Characteristic Study of Boron Doped Carbon Nanowalls Films Deposited by Microwave Plasma Enhanced Chemical Vapor Deposition.

    PubMed

    Lu, Chunyuan; Dong, Qi; Tulugan, Kelimu; Park, Yeong Min; More, Mahendra A; Kim, Jaeho; Kim, Tae Gyu

    2016-02-01

    In this research, catalyst-free vertically aligned boron doped carbon nanowalls films were fabricated on silicon (100) substrates by MPECVD using feeding gases CH4, H2 and B2H6 (diluted with H2 to 5% vol) as precursors. The substrates were pre-seeded with nanodiamond colloid. The fabricated CNWs films were characterized by Scanning Electron Microscopy (SEM) and Raman Spectroscopy. The data obtained from SEM confirms that the CNWs films have different density and wall thickness. From Raman spectrum, a G peak around 1588 cm(-1) and a D band peak at 1362 cm(-1) were observed, which indicates a successful fabrication of CNWs films. The EDX spectrum of boron doped CNWs film shows the existence of boron and carbon. Furthermore, field emission properties of boron doped carbon nanowalls films were measured and field enhancement factor was calculated using Fowler-Nordheim plot. The result indicates that boron doped CNWs films could be potential electron emitting materials.

  9. An investigation of the electrical properties of the interface between pyrolytic carbon and silicon for Schottky diode applications

    NASA Astrophysics Data System (ADS)

    Graham, A. P.; Jay, T.; Jakschik, S.; Knebel, S.; Weber, W.; Schröder, U.; Mikolajick, T.

    2012-06-01

    An investigation of the electrical properties of the interface between nano-crystalline, pyrolytic carbon, and silicon is presented. We have deposited conductive carbon films on silicon substrates by the pyrolysis of ethene and structured them into Schottky diodes in order to evaluate the electrical properties of the interface. The results show that the Schottky barrier to n-doped silicon is 0.46 eV, whereas for p-doped silicon, it is 0.66 eV. The carbon to n-type silicon barrier height is comparable to the values for metal silicide contacts in commercial devices. The results imply that no interfacial layer is formed and show the absence of Fermi-level pinning.

  10. Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers

    PubMed Central

    Guan, Bin; Siampour, Hamidreza; Fan, Zhao; Wang, Shun; Kong, Xiang Yang; Mesli, Abdelmadjid; Zhang, Jian; Dan, Yaping

    2015-01-01

    This Report presents a nitrogen-doping method by chemically forming self-assembled monolayers on silicon. Van der Pauw technique, secondary-ion mass spectroscopy and low temperature Hall effect measurements are employed to characterize the nitrogen dopants. The experimental data show that the diffusion coefficient of nitrogen dopants is 3.66 × 10−15 cm2 s−1, 2 orders magnitude lower than that of phosphorus dopants in silicon. It is found that less than 1% of nitrogen dopants exhibit electrical activity. The analysis of Hall effect data at low temperatures indicates that the donor energy level for nitrogen dopants is located at 189 meV below the conduction band, consistent with the literature value. PMID:26227342

  11. A DLTS study of hydrogen doped czochralski-grown silicon

    NASA Astrophysics Data System (ADS)

    Jelinek, M.; Laven, J. G.; Kirnstoetter, S.; Schustereder, W.; Schulze, H.-J.; Rommel, M.; Frey, L.

    2015-12-01

    In this study we examine proton implanted and subsequently annealed commercially available CZ wafers with the DLTS method. Depth-resolved spreading resistance measurements are shown, indicating an additional peak in the induced doping profile, not seen in the impurity-lean FZ reference samples. The additional peak lies about 10-15 μm deeper than the main peak near the projected range of the protons. A DLTS characterization in the depth of the additional peak indicates that it is most likely not caused by classical hydrogen-related donors known also from FZ silicon but by an additional donor complex whose formation is assisted by the presence of silicon self-interstitials.

  12. Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers

    NASA Astrophysics Data System (ADS)

    Guan, Bin; Siampour, Hamidreza; Fan, Zhao; Wang, Shun; Kong, Xiang Yang; Mesli, Abdelmadjid; Zhang, Jian; Dan, Yaping

    2015-07-01

    This Report presents a nitrogen-doping method by chemically forming self-assembled monolayers on silicon. Van der Pauw technique, secondary-ion mass spectroscopy and low temperature Hall effect measurements are employed to characterize the nitrogen dopants. The experimental data show that the diffusion coefficient of nitrogen dopants is 3.66 × 10-15 cm2 s-1, 2 orders magnitude lower than that of phosphorus dopants in silicon. It is found that less than 1% of nitrogen dopants exhibit electrical activity. The analysis of Hall effect data at low temperatures indicates that the donor energy level for nitrogen dopants is located at 189 meV below the conduction band, consistent with the literature value.

  13. Characterisation of active dopants in boron-doped self-assembled silicon nanostructures

    NASA Astrophysics Data System (ADS)

    Puthen Veettil, Binesh; Zhang, Tian; Chin, Robert Lee; Jia, Xuguang; Nomoto, Keita; Yang, Terry Chien-Jen; Lin, Ziyun; Wu, Lingfeng; Rexiati, Reyifate; Gutsch, Sebastian; Conibeer, Gavin; Perez-Würfl, Ivan

    2016-10-01

    Doping of silicon nanocrystals has become an important topic due to its potential to enable the fabrication of environmentally friendly and cost-effective optoelectronic and photovoltaic devices. However, doping of silicon nanocrystals has been proven difficult and most of the structural and electronic properties are still not well understood. In this work, the intrinsic and boron-doped self-assembled silicon nanocrystals were prepared and mainly characterised by the transient current method to study the behaviour of charge carriers in these materials. Our experiments quantified the amount of electrically active boron dopants that contributed to charge transport. From this, the boron doping efficiency in the nanocrystal superlattice was estimated.

  14. Delta-Doping at Wafer Level for High Throughput, High Yield Fabrication of Silicon Imaging Arrays

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E. (Inventor); Nikzad, Shoulch (Inventor); Jones, Todd J. (Inventor); Greer, Frank (Inventor); Carver, Alexander G. (Inventor)

    2014-01-01

    Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3 + NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.

  15. The observation of damage regions produced by neutron irradiation in lithium-doped silicon solar cells.

    NASA Technical Reports Server (NTRS)

    Ghosh, S.; Sargent, G. A.

    1972-01-01

    Study regions of lattice disorder produced in lithium-doped float-zone melted n/p-type silicon solar cells by irradiation with monoenergetic neutrons at doses between 10 to the 10th and 10 to the 13th per cu cm. The defect regions were revealed by chemically etching the surface of the solar cells and by observing carbon replicas in an electron microscope. It was found that the defect density increased with increasing irradiation dose and increased lithium content, whereas the average defect diameter was found to decrease. From thermal annealing experiments it was found that in the lithium-doped material the defect structure was stable at temperatures between 300 and 1200 K. This was found to be in contrast to the undoped material where at the lowest doses considerable annealing was observed to occur. These results are discussed in terms of the theoretical predictions and models of defect clusters proposed by Gossick (1959) and Crawford and Cleland (1959).

  16. Photoluminescence of porous silicon stain etched and doped with erbium and ytterbium

    NASA Astrophysics Data System (ADS)

    Díaz-Herrera, B.; González-Díaz, B.; Guerrero-Lemus, R.; Hernández-Rodríguez, C.; Méndez-Ramos, J.; Rodríguez, V. D.

    2009-02-01

    A novel low cost process has been developed for application in porous silicon-based photodetectors and solar cells, where conventional doping processes are not affordable because of the high processing cost and technical difficulties. Ytterbium and erbium (Yb 3+-Er 3+) ions were introduced into luminescent porous silicon stain etched by thermal diffusion. Doping profiles were evaluated by energy-dispersive spectroscopy analysis. The visible and near-infrared photoluminescence of Yb 3+-Er 3+ co-doped stain-etched porous silicon layers is observed and evaluated under 980 nm pumping. Up-conversion processes that could improve the efficiency of silicon-based solar cells are detected.

  17. High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures.

    PubMed

    Liu, Yuan; Sheng, Jiming; Wu, Hao; He, Qiyuan; Cheng, Hung-Chieh; Shakir, Muhammad Imran; Huang, Yu; Duan, Xiangfeng

    2016-06-01

    Scalable fabrication of vertical-tunneling transistors is presented based on heterostructures formed between graphene, highly doped silicon, and its native oxide. Benefiting from the large density of states of highly doped silicon, the tunneling transistors can deliver a current density over 20 A cm(-2) . This study demonstrates that the interfacial native oxide plays a crucial role in governing the carrier transport in graphene-silicon heterostructures.

  18. Properties of boron-doped thin films of polycrystalline silicon

    SciTech Connect

    Merabet, Souad

    2013-12-16

    The properties of polycrystalline-silicon films deposited by low pressure chemical vapor deposition and doped heavily in situ boron-doped with concentration level of around 2×10{sup 20}cm{sup −3} has been studied. Their properties are analyzed using electrical and structural characterization means by four points probe resistivity measurements and X-ray diffraction spectra. The thermal-oxidation process are performed on sub-micron layers of 200nm/c-Si and 200nm/SiO{sub 2} deposited at temperatures T{sub d} ranged between 520°C and 605°C and thermally-oxidized in dry oxygen ambient at 945°C. Compared to the as-grown resistivity with silicon wafers is known to be in the following sequence <ρ{sub 200nm/c−Si}> < <ρ{sub 200nm/SiO2}> and <ρ{sub 520}> < <ρ{sub 605}>. The measure X-ray spectra is shown, that the Bragg peaks are marked according to the crystal orientation in the film deposited on bare substrates (poly/c-Si), for the second series of films deposited on bare oxidized substrates (poly/SiO{sub 2}) are clearly different.

  19. Near-infrared free carrier absorption in heavily doped silicon

    SciTech Connect

    Baker-Finch, Simeon C.; McIntosh, Keith R.; Yan, Di; Fong, Kean Chern; Kho, Teng C.

    2014-08-14

    Free carrier absorption in heavily doped silicon can have a significant impact on devices operating in the infrared. In the near infrared, the free carrier absorption process can compete with band to band absorption processes, thereby reducing the number of available photons to optoelectronic devices such as solar cells. In this work, we fabricate 18 heavily doped regions by phosphorus and boron diffusion into planar polished silicon wafers; the simple sample structure facilitates accurate and precise measurement of the free carrier absorptance. We measure and model reflectance and transmittance dispersion to arrive at a parameterisation for the free carrier absorption coefficient that applies in the wavelength range between 1000 and 1500 nm, and the range of dopant densities between ∼10{sup 18} and 3 × 10{sup 20} cm{sup −3}. Our measurements indicate that previously published parameterisations underestimate the free carrier absorptance in phosphorus diffusions. On the other hand, published parameterisations are generally consistent with our measurements and model for boron diffusions. Our new model is the first to be assigned uncertainty and is well-suited to routine device analysis.

  20. Crystallization and doping of amorphous silicon on low temperature plastic

    DOEpatents

    Kaschmitter, J.L.; Truher, J.B.; Weiner, K.H.; Sigmon, T.W.

    1994-09-13

    A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate is disclosed. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900 C), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180 C for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180 C) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide. 5 figs.

  1. Crystallization and doping of amorphous silicon on low temperature plastic

    DOEpatents

    Kaschmitter, James L.; Truher, Joel B.; Weiner, Kurt H.; Sigmon, Thomas W.

    1994-01-01

    A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900.degree. C.), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180.degree. C. for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180.degree. C.) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide.

  2. Site-selected doping in silicon nanowires by an external electric field.

    PubMed

    Wu, Fang; Kan, Erjun; Wu, Xiaojun

    2011-09-01

    The properties of dopant-related defects in silicon nanowires are key characteristics in semiconductive devices. Our first-principles calculations predicted that the preferred doping sites of B and P atoms in hydrogen-passivated silicon nanowires have opposite distribution behavior under electric field, suggesting a steady intrinsic p-n junction can be spontaneously formed in (B and P) codoped silicon nanowires.

  3. Oxygen and carbon impurities and related defects in silicon

    NASA Technical Reports Server (NTRS)

    Pearce, C. W.

    1985-01-01

    Oxygen and carbon are the predominant impurities in Czochralski-grown silicon. The incorporation of oxygen and carbon during crystal growth is reviewed and device effects are discussed. Methods for controlling oxygen and carbon incorporation during crystal growth are discussed and results supporting a segregation coefficient of k=0.5 for oxygen are presented. The nucleation and precipitation behavior of oxygen is complex. Temperature and doping level effects which add insight into the role of point defects in the nucleation process are highlighted. In general, precipitation is found to be retarded in N+ and P+ silicon. The types and quantities of defects resulting from the oxygen precipitates is of interest as they are technologically useful in the process called intrinsic gettering. A comparison is made between the available defect sites and the quantities of metallic impurities present in a typical wafer which need to be gettered. Finally, a discussion of the denuded-zone, intrinsic-gettered (DZ-IG) structure on device properties is presented.

  4. Carbon/Silicon Heterojunction Solar Cells: State of the Art and Prospects.

    PubMed

    Li, Xinming; Lv, Zheng; Zhu, Hongwei

    2015-11-01

    In the last few decades, advances and breakthroughs of carbon materials have been witnessed in both scientific fundamentals and potential applications. The combination of carbon materials with traditional silicon semiconductors to fabricate solar cells has been a promising field of carbon science. The power conversion efficiency has reached 15-17% with an astonishing speed, and the diversity of systems stimulates interest in further research. Here, the historical development and state-of-the-art carbon/silicon heterojunction solar cells are covered. Firstly, the basic concept and mechanism of carbon/silicon solar cells are introduced with a specific focus on solar cells assembled with carbon nanotubes and graphene due to their unique structures and properties. Then, several key technologies with special electrical and optical designs are introduced to improve the cell performance, such as chemical doping, interface passivation, anti-reflection coatings, and textured surfaces. Finally, potential pathways and opportunities based on the carbon/silicon heterojunction are envisaged. The aspects discussed here may enable researchers to better understand the photovoltaic effect of carbon/silicon heterojunctions and to optimize the design of graphene-based photodevices for a wide range of applications. PMID:26422457

  5. Electroluminescence of Carbon-Implanted Silicon

    NASA Astrophysics Data System (ADS)

    Risch, Marcel; Bradley, Michael

    2007-11-01

    Silicon, being the staple semiconductor of integrated circuits and microchips, features an indirect band gap which limits its application in photonic devices. However, there is a large demand for an interface between electric circuits and optical circuits and therefore light-emitting silicon-compatible devices. A possible approach to enhance the room-temperature light properties of silicon is carbon ion implantation. We compute the absolute number of implanted ions using the Lieberman model for the ion current. Subsequently, SRIM calculations yield the concentration distribution, which has great influence on the emission spectrum. We produced Schottky diodes from the processed samples and found the most stable and efficient operation at a current density of about 2.5 A/cm^2. The observed electroluminescence, caused by compositional and structural disorder, appears orange-white to the eye. The discussed method has limitations for the quantum efficiency but shows some potential for cost-effective on-chip light emitting diodes (LED).

  6. Boron- and phosphorus-doped polycrystalline silicon thin films prepared by silver-induced layer exchange

    SciTech Connect

    Antesberger, T.; Wassner, T. A.; Jaeger, C.; Algasinger, M.; Kashani, M.; Scholz, M.; Matich, S.; Stutzmann, M.

    2013-05-27

    Intentional boron and phosphorus doping of polycrystalline silicon thin films on glass prepared by the silver-induced layer exchange is presented. A silver/(titanium) oxide/amorphous silicon stack is annealed at temperatures below the eutectic temperature of the Ag/Si system, leading to a complete layer exchange and simultaneous crystallization of the amorphous silicon. Intentional doping of the amorphous silicon prior to the exchange process results in boron- or phosphorus-doped polycrystalline silicon. Hall effect measurements show carrier concentrations between 2 Multiplication-Sign 10{sup 17} cm{sup -3} and 3 Multiplication-Sign 10{sup 20} cm{sup -3} for phosphorus and 4 Multiplication-Sign 10{sup 18} cm{sup -3} to 3 Multiplication-Sign 10{sup 19} cm{sup -3} for boron-doped layers, with carrier mobilities up to 90 cm{sup 2}/V s.

  7. Evaluation of bacterial adhesion on Si-doped diamond-like carbon films

    NASA Astrophysics Data System (ADS)

    Zhao, Q.; Liu, Y.; Wang, C.; Wang, S.

    2007-06-01

    Diamond-like carbon (DLC) films as biomaterial for medical devices have been attracting great interest due to their excellent properties such as hardness, low friction and chemical inertness. It has been demonstrated that the properties of DLC films can be further improved by the addition of silicon into DLC films, such as thermal stability, compressive stress, etc. However no research work on anti-bacterial properties of silicon-doped diamond-like carbon films has been reported. In this paper the surface physical and chemical properties of Si-doped diamond-like carbon films with various Si contents on 316 stainless steel substrate prepared by a magnetron sputtering technique were investigated, including surface topography, surface chemistry, the sp 3/sp 2 ratio, contact angle, surface free energy, etc. Bacterial adhesion to Si-doped DLC films was evaluated with Pseudomonas aeruginosa, Staphylococcus epidermidis and Staphylococcus aureus which frequently cause medical device-associated infections. The experimental results showed that bacterial adhesion decreased with increasing the silicon content in the films. All the Si-doped DLC films performed much better than stainless steel 316L on reducing bacterial attachment.

  8. Hybrid integration of carbon nanotubes into silicon slot photonic structures

    NASA Astrophysics Data System (ADS)

    Durán Valdeiglesias, E.; Zhang, W.; Hoang, H. C.; Alonso-Ramos, C.; Noury, A.; Serna, S.; Le Roux, X.; Cassan, E.; Izard, N.; Sarti, F.; Torrini, U.; Balestrieri, M.; Keita, A.-S.; Yang, H.; Bezugly, V.; Vinattieri, A.; Cuniberti, G.; Filoramo, A.; Gurioli, M.; Vivien, L.

    2016-03-01

    Silicon photonics, due to its compatibility with the CMOS platform and unprecedented integration capability, has become the preferred solution for the implementation of next generation optical interconnects. However, current Si photonics require on-chip integration of several materials, including III-V for lasing, doped silicon for modulation and Ge for detection. The very different requirements of these materials result in complex fabrication processes that offset the cost-effectiveness of the Si photonics approach. We are developing an alternative route towards the integration of optoelectronic devices in Si photonic, relying on the use of single wall carbon nanotubes (SWNTs). SWNTs can be considered as a Si compatible material able to emit, modulate and detect near-infrared light. Hence, they hold a unique potential to implement all active devices in the Si photonics platform. In addition, solution processed SWNTs can be integrated on Si using spin-coating techniques, obviating the need of complex epitaxial growth or chip bonding approaches. Here, we report on our recent progress in the coupling of SWNTs light emission into optical resonators implemented on the silicon-on-insulator (SOI) platform.

  9. Silicon/Carbon Nanotube Photocathode for Splitting Water

    NASA Technical Reports Server (NTRS)

    Amashukeli, Xenia; Manohara, Harish; Greer, Harold F.; Hall, Lee J.; Gray, Harry B.; Subbert, Bryan

    2013-01-01

    A proof-of-concept device is being developed for hydrogen gas production based on water-splitting redox reactions facilitated by cobalt tetra-aryl porphyrins (Co[TArP]) catalysts stacked on carbon nanotubes (CNTs) that are grown on n-doped silicon substrates. The operational principle of the proposed device is based on conversion of photoelectron energy from sunlight into chemical energy, which at a later point, can be turned into electrical and mechanical power. The proposed device will consist of a degenerately n-doped silicon substrate with Si posts covering the surface of a 4-in. (approximately equal to 10cm) wafer. The substrate will absorb radiation, and electrons will move radially out of Si to CNT. Si posts are designed such that the diameters are small enough to allow considerable numbers of electrons to transport across to the CNT layer. CNTs will be grown on top of Si using conformal catalyst (Fe/Ni) deposition over a thin alumina barrier layer. Both metallic and semiconducting CNT will be used in this investigation, thus allowing for additional charge generation from CNT in the IR region. Si post top surfaces will be masked from catalyst deposition so as to prevent CNT growth on the top surface. A typical unit cell will then consist of a Si post covered with CNT, providing enhanced surface area for the catalyst. The device will then be dipped into a solution of Co[TArP] to enable coating of CNT with Co(P). The Si/CNT/Co [TArP] assembly then will provide electrons for water splitting and hydrogen gas production. A potential of 1.23 V is needed to split water, and near ideal band gap is approximately 1.4 eV. The combination of doped Si/CNT/Co [TArP] will enable this redox reaction to be more efficient.

  10. Converting a carbon preform object to a silicon carbide object

    NASA Technical Reports Server (NTRS)

    Levin, Harry (Inventor)

    1990-01-01

    A process for converting in depth a carbon or graphite preform object to a silicon carbide object, silicon carbide/silicon object, silicon carbide/carbon-core object, or a silicon carbide/silicon/carbon-core object, by contacting it with silicon liquid and vapor over various lengths of contact time in a reaction chamber. In the process, a stream comprised of a silicon-containing precursor material in gaseous phase below the decomposition temperature of said gas and a coreactant, carrier or diluent gas such as hydrogen is passed through a hole within a high emissivity, thin, insulating septum into the reaction chamber above the melting point of silicon. The thin septum has one face below the decomposition temperature of the gas and an opposite face exposed to the reaction chamber. Thus, the precursor gas is decomposed directly to silicon in the reaction chamber. Any stream of decomposition gas and any unreacted precursor gas from the reaction chamber is removed. A carbon or graphite preform object placed in the reaction chamber is contacted with the silicon. The carbon or graphite preform object is recovered from the reactor chamber after it has been converted to a desired silicon carbide, silicon and carbon composition.

  11. Dynamics of iron-acceptor-pair formation in co-doped silicon

    SciTech Connect

    Bartel, T.; Gibaja, F.; Graf, O.; Gross, D.; Kaes, M.; Heuer, M.; Kirscht, F.; Möller, C.; Lauer, K.

    2013-11-11

    The pairing dynamics of interstitial iron and dopants in silicon co-doped with phosphorous and several acceptor types are presented. The classical picture of iron-acceptor pairing dynamics is expanded to include the thermalization of iron between different dopants. The thermalization is quantitatively described using Boltzmann statistics and different iron-acceptor binding energies. The proper understanding of the pairing dynamics of iron in co-doped silicon will provide additional information on the electronic properties of iron-acceptor pairs and may become an analytical method to quantify and differentiate acceptors in co-doped silicon.

  12. Phosphorus δ-doped silicon: mixed-atom pseudopotentials and dopant disorder effects.

    PubMed

    Carter, Damien J; Marks, Nigel A; Warschkow, Oliver; McKenzie, David R

    2011-02-11

    Within a full density functional theory framework we calculate the band structure and doping potential for phosphorus δ-doped silicon. We compare two different representations of the dopant plane; pseudo-atoms in which the nuclear charge is fractional between silicon and phosphorus, and explicit arrangements employing distinct silicon and phosphorus atoms. While the pseudo-atom approach offers several computational advantages, the explicit model calculations differ in a number of key points, including the valley splitting, the Fermi level and the width of the doping potential. These findings have implications for parameters used in device modelling.

  13. Carbon Cryogel Silicon Composite Anode Materials for Lithium Ion Batteries

    NASA Technical Reports Server (NTRS)

    Woodworth James; Baldwin, Richard; Bennett, William

    2010-01-01

    A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. 10 One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nano-foams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. 1-4,9 Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

  14. Boron-Doped Silicon Diatom Frustules as a Photocathode for Water Splitting.

    PubMed

    Chandrasekaran, Soundarrajan; Macdonald, Thomas J; Gerson, Andrea R; Nann, Thomas; Voelcker, Nicolas H

    2015-08-12

    An effective solar-powered silicon device for hydrogen production from water splitting is a priority in light of diminishing fossil fuel vectors. There is increasing demand for nanostructuring in silicon to improve its antireflective properties for efficient solar energy conversion. Diatom frustules are naturally occurring biosilica nanostructures formed by biomineralizing microalgae. Here, we demonstrate magnesiothermic conversion of boron-doped silica diatom frustules from Aulacoseira sp. into nanostructured silicon with retention of the original shape. Hydrogen production was achieved for boron-doped silicon diatom frustules coated with indium phosphide nanocrystal layers and an iron sulfur carbonyl electrocatalyst.

  15. Monolayer contact doping of silicon surfaces and nanowires using organophosphorus compounds.

    PubMed

    Hazut, Ori; Agarwala, Arunava; Subramani, Thangavel; Waichman, Sharon; Yerushalmi, Roie

    2013-12-02

    Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures(1). MLCD results in the formation of highly controlled, ultra shallow and sharp doping profiles at the nanometer scale. In MLCD process the dopant source is a monolayer containing dopant atoms. In this article a detailed procedure for surface doping of silicon substrate as well as silicon nanowires is demonstrated. Phosphorus dopant source was formed using tetraethyl methylenediphosphonate monolayer on a silicon substrate. This monolayer containing substrate was brought to contact with a pristine intrinsic silicon target substrate and annealed while in contact. Sheet resistance of the target substrate was measured using 4 point probe. Intrinsic silicon nanowires were synthesized by chemical vapor deposition (CVD) process using a vapor-liquid-solid (VLS) mechanism; gold nanoparticles were used as catalyst for nanowire growth. The nanowires were suspended in ethanol by mild sonication. This suspension was used to dropcast the nanowires on silicon substrate with a silicon nitride dielectric top layer. These nanowires were doped with phosphorus in similar manner as used for the intrinsic silicon wafer. Standard photolithography process was used to fabricate metal electrodes for the formation of nanowire based field effect transistor (NW-FET). The electrical properties of a representative nanowire device were measured by a semiconductor device analyzer and a probe station.

  16. Studies on the reactive melt infiltration of silicon and silicon-molybdenum alloys in porous carbon

    NASA Technical Reports Server (NTRS)

    Singh, M.; Behrendt, D. R.

    1992-01-01

    Investigations on the reactive melt infiltration of silicon and silicon-1.7 and 3.2 at percent molybdenum alloys into porous carbon preforms have been carried out by process modeling, differential thermal analysis (DTA) and melt infiltration experiments. These results indicate that the initial pore volume fraction of the porous carbon preform is a critical parameter in determining the final composition of the raction-formed silicon carbide and other residual phases. The pore size of the carbon preform is very detrimental to the exotherm temperatures due to liquid silicon-carbon reactions encountered during the reactive melt infiltration process. A possible mechanism for the liquid silicon-porous (glassy) carbon reaction has been proposed. The composition and microstructure of the reaction-formed silicon carbide has been discussed in terms of carbon preform microstructures, infiltration materials, and temperatures.

  17. Physics of heavily doped silicon and solar-cell parameter measurement

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.

    1984-01-01

    A study of the physics of heavily doped silicon and solar cell parameter measurement was undertaken. The parameters investigated were energy gap, lifetime, recombination velocity, diffusivity, mobility and if N or P is high.

  18. Enhanced diffusion of oxygen depending on Fermi level position in heavily boron-doped silicon

    SciTech Connect

    Torigoe, Kazuhisa Fujise, Jun; Ono, Toshiaki; Nakamura, Kozo

    2014-11-21

    The enhanced diffusivity of oxygen in heavily boron doped silicon was obtained by analyzing oxygen out-diffusion profile changes found at the interface between a lightly boron-doped silicon epitaxial layer and a heavily boron-doped silicon substrate by secondary ion mass spectrometry. It was found that the diffusivity is proportional to the square root of boron concentration in the range of 10{sup 18 }cm{sup −3}–10{sup 19 }cm{sup −3} at temperatures from 750 °C to 950 °C. The model based on the diffusion of oxygen dimers in double positive charge state could explain the enhanced diffusion. We have concluded that oxygen diffusion enhanced in heavily boron-doped silicon is attributed to oxygen dimers ionized depending on Fermi level position.

  19. Calculated and Experimental Research of Sheet Resistances of Laser-Doped Silicon Solar Cells

    NASA Astrophysics Data System (ADS)

    Li, Tao; Wang, Wen-Jing

    2015-02-01

    The calculated and experimental research of sheet resistances of crystalline silicon solar cells by dry laser doping is investigated. The nonlinear numerical model on laser melting of crystalline silicon and liquid-phase diffusion of phosphorus atoms by dry laser doping is analyzed by the finite difference method implemented in MATLAB. The melting period and melting depth of crystalline silicon as a function of laser energy density is achieved. The effective liquid-phase diffusion of phosphorus atoms in melting silicon by dry laser doping is confirmed by the rapid decrease of sheet resistances in experimental measurement. The plateau of sheet resistances is reached at around 15Ω/□. The calculated sheet resistances as a function of laser energy density is obtained and the calculated results are in good agreement with the corresponding experimental measurement. Due to the successful verification by comparison between experimental measurement and calculated results, the simulation results could be used to optimize the virtual laser doping parameters.

  20. Investigation of the properties of carbon-base nanostructures doped YBa2Cu3O7-δ high temperature superconductor

    NASA Astrophysics Data System (ADS)

    Dadras, Sedigheh; Ghavamipour, Mahshid

    2016-03-01

    In this research, we have investigated the effects of three samples of carbon-base nanostructures (carbon nanoparticles, carbon nanotubes and silicon carbide nanoparticles) doping on the properties of Y1Ba2Cu3O7-δ (YBCO) high temperature superconductor. The pure and doped YBCO samples were synthesized by sol-gel method and characterized by resistivity versus temperature (ρ-T), current versus voltage (I-V), through X-ray diffraction (XRD) and scanning electron microscope (SEM) analysis. The results confirmed that for all the samples, the orthorhombic phase of YBCO compound is formed. We found that the pinning energy and critical current density of samples increase by adding carbon nanostructures to YBCO compound. Also critical temperature is improved by adding carbon nanotubes to YBCO compound, while it does not change much for carbon and silicon carbide nanoparticles doped compounds. Furthermore, the samples were characterized by UV-vis spectroscopy in 300 K and the band gap of the samples was determined. We found that the carbon nanotubes doping decreases YBCO band gap in normal state from 1.90 eV to 1.68 eV, while carbon and SiC nanoparticles doping increases it to 2.20 and 3.37 eV respectively.

  1. Influence of the doping element on the electron mobility in n-silicon

    NASA Astrophysics Data System (ADS)

    Kaiblinger-Grujin, G.; Kosina, H.; Selberherr, S.

    1998-03-01

    We present a theoretical approach to study the dependence of the electron mobility on the dopant species in n-doped silicon under low electric fields. The electron charge distribution of the impurities is calculated by the Thomas-Fermi theory using the energy functional formulation. Ionized impurity scattering has been treated within the Born approximation. Our model accounts for degenerate statistics, dispersive screening and pair scattering, which become important in heavily doped semiconductors. The dielectric function is accurately approximated by a rational function. A new expression for the second Born amplitude of a Yukawa-like charge distribution is derived, which now depends on the atomic and electron numbers of the impurity ion. Monte Carlo simulations including all important scattering mechanism have been performed in the doping concentration range from 1015 to 1021cm-3. The agreement with experimental data is excellent. The results confirm the lower electron mobility in As-doped silicon in comparison to P-doped silicon.

  2. Carbon nanotube-doped polymer optical fiber.

    PubMed

    Uchida, Sho; Martinez, Amos; Song, Yong-Won; Ishigure, Takaaki; Yamashita, Shinji

    2009-10-15

    We present a method to fabricate graded-index multimode polymer optical fibers doped with carbon nanotubes (CNTs). Such fiber structures provide the means to fully utilize the exceptional optical properties of the CNTs. The core region of the fiber is composed of CNTs and polymethyl methacrylate (PMMA) with the addition of diphenyl sulfide (DPS), which acts as the dispersion stabilizer of CNTs in PMMA as well as the dopant to increase the refractive index of the core. Utilizing 2.5 cm of the fiber as a saturable absorber, passively mode-locked lasing with duration of 3.0 ps and repetition rate of 30.3 MHz was demonstrated.

  3. Behaviour of Silicon-Doped CFC Limiter under High Heat Load in TEXTOR-94

    NASA Astrophysics Data System (ADS)

    Huber, A.; Philipps, V.; Hirai, T.; Kirschner, A.; Lehnen, M.; Pospieszczyk, A.; Schweer, B.; Sergienko, G.

    In order to study the impurity production, recycling and power deposition a Si doped CFC test limiter (NS31) was used in TEXTOR-94. The release of impurities (C, Si, O, Cr, CD radicals) was measured spectroscopically. A reduced methane production was found in the Si doped graphite when compared to a pure graphite limiter. A smaller decrease of the carbon fluxes could also be observed. The limiter contained about 1%-1.5% of Si, but a relative Si flux (Si/D) from the Si doped CFC surface between 0.12% and 0.4% has been measured. A chemical erosion of Si due to formation of SiDx has not been observed. Silicon evaporated from the surface at temperatures above 1500°C. This led to an increase of Si concentration and total radiation losses from the plasma. Surface analysis shows the formation of microcracks and holes on the plasma exposed limiter surface. The released Si was deposited in the vicinity of the tangency point of the limiter. Whereas a Si depletion was observed in the area of highest power loading with values reaching in and in-between fibres values of 0.03% and 0.02% respectively.

  4. Carbon nanotube-amorphous silicon hybrid solar cell with improved conversion efficiency

    NASA Astrophysics Data System (ADS)

    Funde, Adinath M.; Nasibulin, Albert G.; Gufran Syed, Hashmi; Anisimov, Anton S.; Tsapenko, Alexey; Lund, Peter; Santos, J. D.; Torres, I.; Gandía, J. J.; Cárabe, J.; Rozenberg, A. D.; Levitsky, Igor A.

    2016-05-01

    We report a hybrid solar cell based on single walled carbon nanotubes (SWNTs) interfaced with amorphous silicon (a-Si). The high quality carbon nanotube network was dry transferred onto intrinsic a-Si forming Schottky junction for metallic SWNT bundles and heterojunctions for semiconducting SWNT bundles. The nanotube chemical doping and a-Si surface treatment minimized the hysteresis effect in current-voltage characteristics allowing an increase in the conversion efficiency to 1.5% under an air mass 1.5 solar spectrum simulator. We demonstrated that the thin SWNT film is able to replace a simultaneously p-doped a-Si layer and transparent conductive electrode in conventional amorphous silicon thin film photovoltaics.

  5. Control of carbon balance in a silicon smelting furnace

    DOEpatents

    Dosaj, V.D.; Haines, C.M.; May, J.B.; Oleson, J.D.

    1992-12-29

    The present invention is a process for the carbothermic reduction of silicon dioxide to form elemental silicon. Carbon balance of the process is assessed by measuring the amount of carbon monoxide evolved in offgas exiting the furnace. A ratio of the amount of carbon monoxide evolved and the amount of silicon dioxide added to the furnace is determined. Based on this ratio, the carbon balance of the furnace can be determined and carbon feed can be adjusted to maintain the furnace in carbon balance.

  6. Process for fabricating device structures for real-time process control of silicon doping

    DOEpatents

    Weiner, Kurt H.

    2001-01-01

    Silicon device structures designed to allow measurement of important doping process parameters immediately after the doping step has occurred. The test structures are processed through contact formation using standard semiconductor fabrication techniques. After the contacts have been formed, the structures are covered by an oxide layer and an aluminum layer. The aluminum layer is then patterned to expose the contact pads and selected regions of the silicon to be doped. Doping is then performed, and the whole structure is annealed with a pulsed excimer laser. But laser annealing, unlike standard annealing techniques, does not effect the aluminum contacts because the laser light is reflected by the aluminum. Once the annealing process is complete, the structures can be probed, using standard techniques, to ascertain data about the doping step. Analysis of the data can be used to determine probable yield reductions due to improper execution of the doping step and thus provide real-time feedback during integrated circuit fabrication.

  7. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

    DOEpatents

    Carlson, David E.

    1980-01-01

    Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

  8. Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere

    DOEpatents

    Hersam, Mark C.; Lipson, Albert L.; Bandyopadhyay, Sudeshna; Karmel, Hunter J; Bedzyk, Michael J

    2014-05-27

    A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.

  9. Doped silicon nanocrystals from organic dopant precursor by a SiCl{sub 4}-based high frequency nonthermal plasma

    SciTech Connect

    Zhou, Shu; Ding, Yi; Nozaki, Tomohiro; Pi, Xiaodong

    2014-11-03

    Doped silicon nanocrystals (Si NCs) are of great interest in demanding low-cost nanodevices because of the abundance and nontoxicity of Si. Here, we demonstrate a cost-effective gas phase approach to synthesize phosphorous (P)-doped Si NCs in which the precursors used, i.e., SiCl{sub 4}, trimethyl phosphite (TMP), are both safe and economical. It is found that the TMP-enabled P-doping does not change the crystalline structure of Si NCs. The surface of P-doped Si NCs is terminated by both Cl and H. The Si–H bond density at the surface of P-doped Si NCs is found to be much higher than that of undoped Si NCs. The X-ray photoelectron spectroscopy and electron spin resonance results indicate that P atoms are doped into the substitutional sites of the Si-NC core and electrically active in Si NCs. Unintentional impurities, such as carbon contained in TMP, are not introduced into Si NCs.

  10. Photoconductivity of organic polymer films doped with porous silicon nanoparticles and ionic polymethine dyes

    SciTech Connect

    Davidenko, N. A. Skrichevsky, V. A.; Ishchenko, A. A.; Karlash, A. Yu.; Mokrinskaya, E. V.

    2009-05-15

    Features of electrical conductivity and photoconductivity of polyvinylbutyral films containing porous silicon nanoparticles and similar films doped with cationic and anionic polymethine dyes are studied. Sensitization of the photoelectric effect by dyes with different ionicities in films is explained by the possible photogeneration of holes and electrons from dye molecules and the intrinsic bipolar conductivity of porous silicon nanoparticles. It is assumed that the electronic conductivity in porous silicon nanoparticles is higher in comparison with p-type conductivity.

  11. Strong adsorption of Al-doped carbon nanotubes toward cisplatin

    NASA Astrophysics Data System (ADS)

    Li, Wei; Li, Guo-Qing; Lu, Xiao-Min; Ma, Juan-Juan; Zeng, Peng-Yu; He, Qin-Yu; Wang, Yin-Zhen

    2016-08-01

    The adsorption of cisplatin molecule on Al-doped CNTs is investigated using density functional theory. The obtained results indicate that Al-doped carbon nanotubes can strongly absorb cisplatin. After absorbing cisplatin, the symmetry of CNTs has some changes. We innovatively defined a parameter of symmetry variation which relates to the adsorption. By analyzing the electronic structure, it can be concluded that under the circumstance that cisplatin was absorbed by Al-doped CNTs through aluminum atom of Al-doped CNTs. In conclusion, Al-doped CNTs is a kind of potential delivery carrier with high quality for anticancer drug cisplatin.

  12. Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C

    SciTech Connect

    Matsumura, Hideki; Hayakawa, Taro; Ohta, Tatsunori; Nakashima, Yuki; Miyamoto, Motoharu; Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke

    2014-09-21

    Phosphorus (P) or boron (B) atoms can be doped at temperatures as low as 80 to 350 °C, when crystalline silicon (c-Si) is exposed only for a few minutes to species generated by catalytic cracking reaction of phosphine (PH₃) or diborane (B₂H₆) with heated tungsten (W) catalyzer. This paper is to investigate systematically this novel doping method, “Cat-doping”, in detail. The electrical properties of P or B doped layers are studied by the Van der Pauw method based on the Hall effects measurement. The profiles of P or B atoms in c-Si are observed by secondary ion mass spectrometry mainly from back side of samples to eliminate knock-on effects. It is confirmed that the surface of p-type c-Si is converted to n-type by P Cat-doping at 80 °C, and similarly, that of n-type c-Si is to p-type by B Cat-doping. The doping depth is as shallow as 5 nm or less and the electrically activated doping concentration is 10¹⁸ to 10¹⁹cm⁻³ for both P and B doping. It is also found that the surface potential of c-Si is controlled by the shallow Cat-doping and that the surface recombination velocity of minority carriers in c-Si can be enormously lowered by this potential control.

  13. Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

    DOEpatents

    Carlson, David E.; Wronski, Christopher R.

    1979-01-01

    A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

  14. Measurement of steady-state minority-carrier transport parameters in heavily doped n-type silicon

    NASA Technical Reports Server (NTRS)

    Del Alamo, Jesus A.; Swanson, Richard M.

    1987-01-01

    The relevant hole transport and recombination parameters in heavily doped n-type silicon under steady state are the hole diffusion length and the product of the hole diffusion coefficient times the hole equilibrium concentration. These parameters have measured in phosphorus-doped silicon grown by epitaxy throughout nearly two orders of magnitude of doping level. Both parameters are found to be strong functions of donor concentration. The equilibrium hole concentration can be deduced from the measurement. A rigid shrinkage of the forbidden gap appears as the dominant heavy doping mechanism in phosphorus-doped silicon.

  15. Modelling of minority-carrier transport in heavily doped silicon emitters

    NASA Astrophysics Data System (ADS)

    del Alamo, Jesús A.; Swanson, Richard M.

    1987-11-01

    The transport and recombination of minority carriers in heavily doped emitters plays a crucial role in the performance of silicon bipolar transistors and solar cells. In the past, only order-of-magnitude prediction of the value of the current injected into a heavily doped emitter was possible. The limitations to a more accurate modelling stemmed from: (1) the incomplete understanding of the physics of minority carriers in heavily doped semiconductors; (2) the lack of precise measurements of the relevant material parameters; (3) the difficulties encountered with the modelling of transport and recombination in non-homogeneously doped regions, and (4) problems with the characterization of "real" emitters of bipolar devices. This paper reviews recent experimental and theoretical efforts that addressed some of these issues, with the goal of being able to achieve accurate modelling of the current injected into an arbitrary heavily doped region in a silicon device.

  16. Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers

    DOEpatents

    Haller, Eugene E.; Brundermann, Erik

    2000-01-01

    A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.

  17. One-step preparation of multiwall carbon nanotube/silicon hybrids for solar energy conversion

    NASA Astrophysics Data System (ADS)

    Lobiak, Egor V.; Bychanok, Dzmitry S.; Shlyakhova, Elena V.; Kuzhir, Polina P.; Maksimenko, Sergey A.; Bulusheva, Lyubov G.; Okotrub, Alexander V.

    2016-03-01

    The hybrid material consisting of a thin layer of multiwall carbon nanotubes (MWCNTs) on an n-doped silicon wafer was obtained in one step using an aerosol-assisted catalytic chemical vapor deposition. The MWCNTs were grown from a mixture of acetone and ethanol with ˜0.2 wt.% of iron polyoxomolybdate nanocluster of the keplerate-type structure. The samples produced at 800°C and 1050°C were tested as a solar energy converter. It was shown that photoresponse of the hybrid material significantly depends on the presence of structural defects in MWCNTs, being much higher in the case of more defective nanotubes. This is because defects lead to p-doping of nanotubes, whereas the p-n heterojunction between MWCNTs and silicon provides a high efficiency of the solar cell.

  18. N-Type delta Doping of High-Purity Silicon Imaging Arrays

    NASA Technical Reports Server (NTRS)

    Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

    2005-01-01

    A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including

  19. Silicon Composite Anode Materials for Lithium Ion Batteries Based on Carbon Cryogels and Carbon Paper

    NASA Technical Reports Server (NTRS)

    Woodworth, James; Baldwin, Richard; Bennett, William

    2010-01-01

    A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nanofoams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

  20. Carbon Cryogel and Carbon Paper-Based Silicon Composite Anode Materials for Lithium-Ion Batteries

    NASA Technical Reports Server (NTRS)

    Woodworth, James; Baldwin, Richard; Bennett, William

    2010-01-01

    A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. 6 One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nano-foams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. 1-5 Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

  1. Polycrystalline silicon semiconducting material by nuclear transmutation doping

    DOEpatents

    Cleland, John W.; Westbrook, Russell D.; Wood, Richard F.; Young, Rosa T.

    1978-01-01

    A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.

  2. High surface area silicon carbide-coated carbon aerogel

    DOEpatents

    Worsley, Marcus A; Kuntz, Joshua D; Baumann, Theodore F; Satcher, Jr, Joe H

    2014-01-14

    A metal oxide-carbon composite includes a carbon aerogel with an oxide overcoat. The metal oxide-carbon composite is made by providing a carbon aerogel, immersing the carbon aerogel in a metal oxide sol under a vacuum, raising the carbon aerogel with the metal oxide sol to atmospheric pressure, curing the carbon aerogel with the metal oxide sol at room temperature, and drying the carbon aerogel with the metal oxide sol to produce the metal oxide-carbon composite. The step of providing a carbon aerogel can provide an activated carbon aerogel or provide a carbon aerogel with carbon nanotubes that make the carbon aerogel mechanically robust. Carbon aerogels can be coated with sol-gel silica and the silica can be converted to silicone carbide, improved the thermal stability of the carbon aerogel.

  3. Multiple doping of silicon-germanium alloys for thermoelectric applications

    NASA Technical Reports Server (NTRS)

    Fleurial, Jean-Pierre; Vining, Cronin B.; Borshchevsky, Alex

    1989-01-01

    It is shown that heavy doping of n-type Si/Ge alloys with phosphorus and arsenic (V-V doping interaction) by diffusion leads to a significant enhancement of their carrier concentration and possible improvement of the thermoelectric figure of merit. High carrier concentrations were achieved by arsenic doping alone, but for a same doping level higher carrier mobilities and lower resistivities are obtained through phosphorus doping. By combining the two dopants with the proper diffusion treatments, it was possible to optimize the different properties, obtaining high carrier concentration, good carrier mobility and low electrical resistivity. Similar experiments, using the III-V doping interaction, were conducted on boron-doped p-type samples and showed the possibility of overcompensating the samples by diffusing arsenic, in order to get n-type behavior.

  4. Method for making defect-free zone by laser-annealing of doped silicon

    DOEpatents

    Narayan, Jagdish; White, Clark W.; Young, Rosa T.

    1980-01-01

    This invention is a method for improving the electrical properties of silicon semiconductor material. The method comprises irradiating a selected surface layer of the semiconductor material with high-power laser pulses characterized by a special combination of wavelength, energy level, and duration. The combination effects melting of the layer without degrading electrical properties, such as minority-carrier diffusion length. The method is applicable to improving the electrical properties of n- and p-type silicon which is to be doped to form an electrical junction therein. Another important application of the method is the virtually complete removal of doping-induced defects from ion-implanted or diffusion-doped silicon substrates.

  5. Method of synthesizing metal doped diamond-like carbon films

    NASA Technical Reports Server (NTRS)

    Ueno, Mayumi (Inventor); Sunkara, Mahendra Kumar (Inventor)

    2003-01-01

    A method of synthesizing metal doped carbon films by placing a substrate in a chamber with a selected amount of a metalorganic compound. An electron cyclotron resonance is applied to the chamber in order to vaporize the metalorganic compound. The resonance is applied to the chamber until a metal doped carbon film is formed. The metalorganic compound is preferably selected from the group consisting of an organic salt of ruthenium, palladium, gold or platinum.

  6. Efficient photocatalytic activity with carbon-doped SiO2 nanoparticles.

    PubMed

    Zhang, Dongen; Wu, Jinbo; Zhou, Bingpu; Hong, Yaying; Li, Shunbo; Wen, Weijia

    2013-07-01

    Photocatalysis provides a 'green' approach to completely eliminate various kinds of contaminants that are fatal for current environmental and energy issues. Semiconductors are one of the most frequently used photocatalysts as they can absorb light over a wide spectral range. However, it is also well known that naked SiO2 is not an efficient photocatalyst due to its relatively large band gap, which could only absorb shortwave ultraviolet light. In this report, nanoscale particles of carbon-doped silicon dioxide (C-doped SiO2) for use in photocatalysis were successfully prepared by a facile one-pot thermal process using tetraethylorthosilicate (TEOS) as the source of both silicon and carbon. These particles were subsequently characterized by thermogravimetric analysis, X-ray diffraction, standard and high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The C-doped SiO2 displayed outstanding photocatalytic properties, as evidenced by its catalysis of Rhodamine B degradation under near-UV irradiation. We propose that carbon doping of the SiO2 lattice creates new energy states between the bottom of the conduction band and the top of the valence band, which narrows the band gap of the material. As a result, the C-doped SiO2 nanoparticles exhibit excellent photocatalytic activities in a neutral environment. The novel synthesis reported herein for this material is both energy efficient and environmentally friendly and as such shows promise as a technique for low-cost, readily scalable industrial production. PMID:23727825

  7. Silicon-Compatible Carbon-Based Micro-Supercapacitors.

    PubMed

    Zhuang, Xiaodong; Feng, Xinliang

    2016-05-17

    CSi electronics: Recently, Simon and co-workers demonstrated silicon-wafer-supported elastic carbide-derived carbons (CDCs) films without any delamination or cracks for micro-supercapacitor application. The fabrication of these CDC films is particularly important for the practical application of micro-supercapacitors in silicon-based electronics and flexible electronics. PMID:27101107

  8. Characteristic Study of Boron Doped Carbon Nanowalls Films Deposited by Microwave Plasma Enhanced Chemical Vapor Deposition.

    PubMed

    Lu, Chunyuan; Dong, Qi; Tulugan, Kelimu; Park, Yeong Min; More, Mahendra A; Kim, Jaeho; Kim, Tae Gyu

    2016-02-01

    In this research, catalyst-free vertically aligned boron doped carbon nanowalls films were fabricated on silicon (100) substrates by MPECVD using feeding gases CH4, H2 and B2H6 (diluted with H2 to 5% vol) as precursors. The substrates were pre-seeded with nanodiamond colloid. The fabricated CNWs films were characterized by Scanning Electron Microscopy (SEM) and Raman Spectroscopy. The data obtained from SEM confirms that the CNWs films have different density and wall thickness. From Raman spectrum, a G peak around 1588 cm(-1) and a D band peak at 1362 cm(-1) were observed, which indicates a successful fabrication of CNWs films. The EDX spectrum of boron doped CNWs film shows the existence of boron and carbon. Furthermore, field emission properties of boron doped carbon nanowalls films were measured and field enhancement factor was calculated using Fowler-Nordheim plot. The result indicates that boron doped CNWs films could be potential electron emitting materials. PMID:27433646

  9. Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

    NASA Technical Reports Server (NTRS)

    Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

    1993-01-01

    Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

  10. Structural evolution and electronic properties of n-type doped hydrogenated amorphous silicon thin films

    NASA Astrophysics Data System (ADS)

    He, Jian; Li, Wei; Xu, Rui; Qi, Kang-Cheng; Jiang, Ya-Dong

    2011-12-01

    The relationship between structure and electronic properties of n-type doped hydrogenated amorphous silicon (a-Si:H) thin films was investigated. Samples with different features were prepared by plasma enhanced chemical vapor deposition (PECVD) at various substrate temperatures. Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy were used to evaluate the structural evolution, meanwhile, electronic-spin resonance (ESR) and optical measurement were applied to explore the electronic properties of P-doped a-Si:H thin films. Results reveal that the changes in materials structure affect directly the electronic properties and the doping efficiency of dopant.

  11. Conformal doping of topographic silicon structures using a radial line slot antenna plasma source

    NASA Astrophysics Data System (ADS)

    Ueda, Hirokazu; Ventzek, Peter L. G.; Oka, Masahiro; Horigome, Masahiro; Kobayashi, Yuuki; Sugimoto, Yasuhiro; Nozawa, Toshihisa; Kawakami, Satoru

    2014-06-01

    Fin extension doping for 10 nm front end of line technology requires ultra-shallow high dose conformal doping. In this paper, we demonstrate a new radial line slot antenna plasma source based doping process that meets these requirements. Critical to reaching true conformality while maintaining fin integrity is that the ion energy be low and controllable, while the dose absorption is self-limited. The saturated dopant later is rendered conformal by concurrent amorphization and dopant containing capping layer deposition followed by stabilization anneal. Dopant segregation assists in driving dopants from the capping layer into the sub silicon surface. Very high resolution transmission electron microscopy-Energy Dispersive X-ray spectroscopy, used to prove true conformality, was achieved. We demonstrate these results using an n-type arsenic based plasma doping process on 10 to 40 nm high aspect ratio fins structures. The results are discussed in terms of the different types of clusters that form during the plasma doping process.

  12. Photovoltaic characteristics of postdeposition iodine-doped amorphous carbon films by microwave surface wave plasma chemical vapor deposition

    SciTech Connect

    Omer, Ashraf M.M.; Adhikari, Sudip; Adhikary, Sunil; Uchida, Hideo; Umeno, Masayoshi

    2005-10-17

    The amorphous carbon thin films have been deposited on silicon and quartz substrates by microwave surface wave plasma chemical vapor deposition at low temperature (<100 deg. C) in Ar/CH{sub 4} phase gas. Doping of iodine has been done in the postdeposited films by exposing them in iodine vapor. The photovoltaic measurements of the films were carried out before and after iodine doping. The results show dramatic decrease of optical gap from 3.4 to 0.9 eV corresponding to nondoping to iodine doping conditions, respectively. The preliminary photovoltaic characteristics of the film deposited on n-type silicon substrate under light illumination (AM1.5, 100 mW/cm{sup 2}) reveal a short-circuit current density of 1.15 {mu}A/cm{sup 2}, open-circuit voltage of 177 mV and fill factor of 21.7%.

  13. Carbon related defects in irradiated silicon revisited.

    PubMed

    Wang, H; Chroneos, A; Londos, C A; Sgourou, E N; Schwingenschlögl, U

    2014-05-09

    Electronic structure calculations employing hybrid functionals are used to gain insight into the interaction of carbon (C) atoms, oxygen (O) interstitials, and self-interstitials in silicon (Si). We calculate the formation energies of the C related defects Ci(SiI), CiOi, CiCs, and CiOi(SiI) with respect to the Fermi energy for all possible charge states. The Ci(SiI)(2+) state dominates in almost the whole Fermi energy range. The unpaired electron in the CiOi(+) state is mainly localized on the C interstitial so that spin polarization is able to lower the total energy. The three known atomic configurations of the CiCs pair are reproduced and it is demonstrated that hybrid functionals yield an improved energetic order for both the A and B-types as compared to previous theoretical studies. Different structures of the CiOi(SiI) cluster result for positive charge states in dramatically distinct electronic states around the Fermi energy and formation energies.

  14. Highly Doped Polycrystalline Silicon Microelectrodes Reduce Noise in Neuronal Recordings In Vivo

    PubMed Central

    Saha, Rajarshi; Jackson, Nathan; Patel, Chetan; Muthuswamy, Jit

    2013-01-01

    The aims of this study are to 1) experimentally validate for the first time the nonlinear current-potential characteristics of bulk doped polycrystalline silicon in the small amplitude voltage regimes (0–200 μV) and 2) test if noise amplitudes (0–15 μV) from single neuronal electrical recordings get selectively attenuated in doped polycrystalline silicon microelectrodes due to the above property. In highly doped polycrystalline silicon, bulk resistances of several hundred kilo-ohms were experimentally measured for voltages typical of noise amplitudes and 9–10 kΩ for voltages typical of neural signal amplitudes (>150–200 μV). Acute multiunit measurements and noise measurements were made in n = 6 and n = 8 anesthetized adult rats, respectively, using polycrystalline silicon and tungsten microelectrodes. There was no significant difference in the peak-to-peak amplitudes of action potentials recorded from either microelectrode (p > 0.10). However, noise power in the recordings from tungsten microelectrodes (26.36 ± 10.13 pW) was significantly higher (p < 0.001) than the corresponding value in polycrystalline silicon microelectrodes (7.49 ± 2.66 pW). We conclude that polycrystalline silicon microelectrodes result in selective attenuation of noise power in electrical recordings compared to tungsten microelectrodes. This reduction in noise compared to tungsten microelectrodes is likely due to the exponentially higher bulk resistances offered by highly doped bulk polycrystalline silicon in the range of voltages corresponding to noise in multiunit measurements. PMID:20667815

  15. Doping of carbon foams for use in energy storage devices

    DOEpatents

    Mayer, S.T.; Pekala, R.W.; Morrison, R.L.; Kaschmitter, J.L.

    1994-10-25

    A polymeric foam precursor, wetted with phosphoric acid, is pyrolyzed in an inert atmosphere to produce an open-cell doped carbon foam, which is utilized as a lithium intercalation anode in a secondary, organic electrolyte battery. Tests were conducted in a cell containing an organic electrolyte and using lithium metal counter and reference electrodes, with the anode located there between. Results after charge and discharge cycling, for a total of 6 cycles, indicated a substantial increase in the energy storage capability of the phosphorus doped carbon foam relative to the undoped carbon foam, when used as a rechargeable lithium ion battery. 3 figs.

  16. Doping of carbon foams for use in energy storage devices

    DOEpatents

    Mayer, Steven T.; Pekala, Richard W.; Morrison, Robert L.; Kaschmitter, James L.

    1994-01-01

    A polymeric foam precursor, wetted with phosphoric acid, is pyrolyzed in an inert atmosphere to produce an open-cell doped carbon foam, which is utilized as a lithium intercalation anode in a secondary, organic electrolyte battery. Tests were conducted in a cell containing an organic electrolyte and using lithium metal counter and reference electrodes, with the anode located therebetween. Results after charge and discharge cycling, for a total of 6 cycles, indicated a substantial increase in the energy storage capability of the phosphorus doped carbon foam relative to the undoped carbon foam, when used as a rechargeable lithium ion battery.

  17. Porous doped silicon nanowires for lithium ion battery anode with long cycle life.

    PubMed

    Ge, Mingyuan; Rong, Jiepeng; Fang, Xin; Zhou, Chongwu

    2012-05-01

    Porous silicon nanowires have been well studied for various applications; however, there are only very limited reports on porous silicon nanowires used for energy storage. Here, we report both experimental and theoretical studies of porous doped silicon nanowires synthesized by direct etching of boron-doped silicon wafers. When using alginate as a binder, porous silicon nanowires exhibited superior electrochemical performance and long cycle life as anode material in a lithium ion battery. Even after 250 cycles, the capacity remains stable above 2000, 1600, and 1100 mAh/g at current rates of 2, 4, and 18 A/g, respectively, demonstrating high structure stability due to the high porosity and electron conductivity of the porous silicon nanowires. A mathematic model coupling the lithium ion diffusion and the strain induced by lithium intercalation was employed to study the effect of porosity and pore size on the structure stability. Simulation shows silicon with high porosity and large pore size help to stabilize the structure during charge/discharge cycles.

  18. Contact doping of silicon wafers and nanostructures with phosphine oxide monolayers.

    PubMed

    Hazut, Ori; Agarwala, Arunava; Amit, Iddo; Subramani, Thangavel; Zaidiner, Seva; Rosenwaks, Yossi; Yerushalmi, Roie

    2012-11-27

    Contact doping method for the controlled surface doping of silicon wafers and nanometer scale structures is presented. The method, monolayer contact doping (MLCD), utilizes the formation of a dopant-containing monolayer on a donor substrate that is brought to contact and annealed with the interface or structure intended for doping. A unique feature of the MLCD method is that the monolayer used for doping is formed on a separate substrate (termed donor substrate), which is distinct from the interface intended for doping (termed acceptor substrate). The doping process is controlled by anneal conditions, details of the interface, and molecular precursor used for the formation of the dopant-containing monolayer. The MLCD process does not involve formation and removal of SiO(2) capping layer, allowing utilization of surface chemistry details for tuning and simplifying the doping process. Surface contact doping of intrinsic Si wafers (i-Si) and intrinsic silicon nanowires (i-SiNWs) is demonstrated and characterized. Nanowire devices were formed using the i-SiNW channel and contact doped using the MLCD process, yielding highly doped SiNWs. Kelvin probe force microscopy (KPFM) was used to measure the longitudinal dopant distribution of the SiNWs and demonstrated highly uniform distribution in comparison with in situ doped wires. The MLCD process was studied for i-Si substrates with native oxide and H-terminated surface for three types of phosphorus-containing molecules. Sheet resistance measurements reveal the dependency of the doping process on the details of the surface chemistry used and relation to the different chemical environments of the P═O group. Characterization of the thermal decomposition of several monolayer types formed on SiO(2) nanoparticles (NPs) using TGA and XPS provides insight regarding the role of phosphorus surface chemistry at the SiO(2) interface in the overall MLCD process. The new MLCD process presented here for controlled surface doping

  19. Nitrogen-doped, carbon-rich, highly photoluminescent carbon dots from ammonium citrate.

    PubMed

    Yang, Zhi; Xu, Minghan; Liu, Yun; He, Fengjiao; Gao, Feng; Su, Yanjie; Wei, Hao; Zhang, Yafei

    2014-01-01

    The synthesis of water-soluble nitrogen-doped carbon dots has received great attention, due to their wide applications in oxygen reduction reaction, cell imaging, sensors, and drug delivery. Herein, nitrogen-doped, carbon-rich, highly photoluminescent carbon dots have been synthesized for the first time from ammonium citrate under hydrothermal conditions. The obtained nitrogen-doped carbon dots possess bright blue luminescence, short fluorescence lifetime, pH-sensitivity and excellent stability at a high salt concentration. They have potential to be used for pH sensors, cell imaging, solar cells, and photocatalysis.

  20. Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser.

    PubMed

    Tian, Yingdong; Yan, Jianchang; Zhang, Yun; Chen, Xiang; Guo, Yanan; Cong, Peipei; Sun, Lili; Wang, Qinjin; Guo, Enqing; Wei, Xuecheng; Wang, Junxi; Li, Jinmin

    2015-05-01

    We demonstrated stimulated emission at 288 nm from a silicon-doped AlGaN-based multiple-quantum-well (MQW) ultraviolet (UV) laser grown on sapphire. The optical pumping threshold energy density of the UV laser was 64 mJ/cm2, while lasing behavior was not observed in undoped AlGaN MQWs. This means silicon doping could effectively reduce the lasing threshold of UV lasers, and the mechanism was studied showing that the silicon-doped AlGaN MQWs had a 41% higher internal quantum efficiency (IQE) compared with the undoped one. The transmission electron microscopy characterization showed that silicon doping explicitly improved the crystallographic quality of MQWs. Calculation of the polarization charge in the MQWs further revealed that the advantage of better structure quality outweighed the reduction of internal polarization field by Si doping for the IQE enhancement and successful stimulated emission.

  1. Oxygen defect processes in silicon and silicon germanium

    NASA Astrophysics Data System (ADS)

    Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlögl, U.

    2015-06-01

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  2. Oxygen defect processes in silicon and silicon germanium

    SciTech Connect

    Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlögl, U.

    2015-06-15

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  3. Hetero-doped Nanotubes: Theory, Synthesis and Characterization of Phosphorus-Nitrogen Doped Multiwalled Carbon Nanotubes

    SciTech Connect

    Sumpter, Bobby G; Cruz Silva, Eduardo; Romo Herrera, Jose M; Smith, David J; Terrones Maldonado, Humberto; Terrones Maldonado, Mauricio; Meunier, Vincent; Cullen, David A; Charlier, Jean Christophe; Lopez, Florentino; Gu, Lin; Munoz-Sandoval, Emilio

    2008-01-01

    Arrays of multiwalled carbon nanotubes doped with phosphorous and nitrogen are synthesized using a solution of ferrocene and triphenyl-phosphine in benzylamine in conjunction with spray pyrolysis. We demonstrate that iron phosphide (Fe3P) nanoparticles act as catalysts during nanotube growth, leading to the formation of novel PN-doped multiwalled carbon nanotubes. The samples produced were examined by SEM, HRTEM and STEM, as well as high-resolution elemental analyses using EELS and EDX spectroscopy, and their chemical stability was explored by means of thermogravimetric analysis in the presence of oxygen. The results reveal striking differences when compared to other types of doped nanotubes. These types of hetero-doped nanotubes with the underlying theory and synthesis are predicted to offer great opportunities in the fabrication of fast responsive chemical sensors.

  4. Nitrogen-doped, carbon-rich, highly photoluminescent carbon dots from ammonium citrate

    NASA Astrophysics Data System (ADS)

    Yang, Zhi; Xu, Minghan; Liu, Yun; He, Fengjiao; Gao, Feng; Su, Yanjie; Wei, Hao; Zhang, Yafei

    2014-01-01

    The synthesis of water-soluble nitrogen-doped carbon dots has received great attention, due to their wide applications in oxygen reduction reaction, cell imaging, sensors, and drug delivery. Herein, nitrogen-doped, carbon-rich, highly photoluminescent carbon dots have been synthesized for the first time from ammonium citrate under hydrothermal conditions. The obtained nitrogen-doped carbon dots possess bright blue luminescence, short fluorescence lifetime, pH-sensitivity and excellent stability at a high salt concentration. They have potential to be used for pH sensors, cell imaging, solar cells, and photocatalysis.The synthesis of water-soluble nitrogen-doped carbon dots has received great attention, due to their wide applications in oxygen reduction reaction, cell imaging, sensors, and drug delivery. Herein, nitrogen-doped, carbon-rich, highly photoluminescent carbon dots have been synthesized for the first time from ammonium citrate under hydrothermal conditions. The obtained nitrogen-doped carbon dots possess bright blue luminescence, short fluorescence lifetime, pH-sensitivity and excellent stability at a high salt concentration. They have potential to be used for pH sensors, cell imaging, solar cells, and photocatalysis. Electronic supplementary information (ESI) available: The curve of photoluminescence and absorbance of N-doped CDs and quinine sulfate, and the table showing XPS detailed information. See DOI: 10.1039/c3nr05380f

  5. Enhanced Photoluminescence Properties of Carbon Dots by Doping with Europium.

    PubMed

    Chen, Yuan; Xu, Jiafu; Liu, Bitao; Li, Jiyun; Fang, Xiaomei; Xiong, Liqiong; Peng, Lingling; Han, Tao; Tu, Mingjing

    2016-04-01

    Europium (Eu) doped carbon dots (CDs) were synthesized via a rapid and simple microwave medi- ated method using polyethylene glycol (PEG) as a precursor, and characterized in detail. The results were that these as-prepared CDs showed a uniform and small particle size, and exhibit good pho- tostability and high photoluminescence quantum yields. Additionally, it also found that the doped Eu would change the fluorescence properties, which indicates potential applications in the field of biolabeling. PMID:27451699

  6. Doped carbon nanostructure field emitter arrays for infrared imaging

    DOEpatents

    Korsah, Kofi [Knoxville, TN; Baylor, Larry R [Farragut, TN; Caughman, John B [Oak Ridge, TN; Kisner, Roger A [Knoxville, TN; Rack, Philip D [Knoxville, TN; Ivanov, Ilia N [Knoxville, TN

    2009-10-27

    An infrared imaging device and method for making infrared detector(s) having at least one anode, at least one cathode with a substrate electrically connected to a plurality of doped carbon nanostructures; and bias circuitry for applying an electric field between the anode and the cathode such that when infrared photons are adsorbed by the nanostructures the emitted field current is modulated. The detectors can be doped with cesium to lower the work function.

  7. Visible and Infra-red Light Emission in Boron-Doped Wurtzite Silicon Nanowires

    PubMed Central

    Fabbri, Filippo; Rotunno, Enzo; Lazzarini, Laura; Fukata, Naoki; Salviati, Giancarlo

    2014-01-01

    Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for optoelectronic applications owing to its indirect electronic band gap, which limits its efficiency as a light emitter. Here we show the light emission properties of boron-doped wurtzite silicon nanowires measured by cathodoluminescence spectroscopy at room temperature. A visible emission, peaked above 1.5 eV, and a near infra-red emission at 0.8 eV correlate respectively to the direct transition at the Γ point and to the indirect band-gap of wurtzite silicon. We find additional intense emissions due to boron intra-gap states in the short wavelength infra-red range. We present the evolution of the light emission properties as function of the boron doping concentration and the growth temperature. PMID:24398782

  8. Ligand Doping on the Hybrid Thermoelectric Materials Based on Terthiophene-Capped Silicon Nanoparticles

    NASA Astrophysics Data System (ADS)

    Ashby, Shane P.; Bian, Tiezheng; Guélou, Gabin; Powell, Anthony V.; Chao, Yimin

    2016-03-01

    Over the past 2 years, silicon nanoparticles (SiNPs) functionalised with conjugated molecules have been shown to have potential as low-temperature thermoelectric materials. One key challenge with such materials relates to the introduction of charge carriers. There are two components of organic/silicon nanocomposite materials in which charge carriers can be introduced: the silicon nanoparticle or the organic ligand. Investigation into the effect of introducing charge carriers on the ligands via oxidation is another step towards understanding and optimising this kind of system. Terthiophene-capped SiNPs have been synthesised and characterised before and after doping. Using different ratios and the oxidant NOBF4 to dope the surface ligands, the electrical conductivity has been measured at ambient temperature. The ratio of oxidant to nanoparticles shows similar trends in electrical resistivity to that of conventional conductive polymers and shows significant improvements over the undoped material.

  9. Visible and infra-red light emission in boron-doped wurtzite silicon nanowires.

    PubMed

    Fabbri, Filippo; Rotunno, Enzo; Lazzarini, Laura; Fukata, Naoki; Salviati, Giancarlo

    2014-01-08

    Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for optoelectronic applications owing to its indirect electronic band gap, which limits its efficiency as a light emitter. Here we show the light emission properties of boron-doped wurtzite silicon nanowires measured by cathodoluminescence spectroscopy at room temperature. A visible emission, peaked above 1.5 eV, and a near infra-red emission at 0.8 eV correlate respectively to the direct transition at the Γ point and to the indirect band-gap of wurtzite silicon. We find additional intense emissions due to boron intra-gap states in the short wavelength infra-red range. We present the evolution of the light emission properties as function of the boron doping concentration and the growth temperature.

  10. Silicon doping effect on SF6/O2 plasma chemical texturing

    NASA Astrophysics Data System (ADS)

    Dilonardo, Elena; Valerio Bianco, Giuseppe; Michela Giangregorio, Maria; Losurdo, Maria; Capezzuto, Pio; Bruno, Giovanni

    2011-07-01

    A SF6/O2 plasma chemical etching is proposed as a process to texture n- and p-doped c-Si (100) by chemical reactivity of active fluorine species, under conditions avoiding ion bombardment and sputtering. Under this chemical etching regime, we found a strong impact of silicon doping on texturing characteristics and effectiveness. Specifically, an anisotropic square-based hillock-like texturing with 6% reflectivity is obtained for n-type Si. Conversely, for p-type Si, H2 plasma pretreatments are necessary to activate the silicon etching and obtain a nanotextured surface with a reflectivity of 16%. Reflectance from textured silicon surfaces is investigated and correlated to the morphology, surface roughness, and dimension of features.

  11. Plasma stabilisation of metallic nanoparticles on silicon for the growth of carbon nanotubes

    SciTech Connect

    Esconjauregui, S.; Fouquet, M.; Bayer, B. C.; Gamalski, A. D.; Chen Bingan; Xie Rongsi; Hofmann, S.; Robertson, J.; Cepek, C.; Bhardwaj, S.; Ducati, C.

    2012-08-01

    Ammonia (NH{sub 3}) plasma pretreatment is used to form and temporarily reduce the mobility of Ni, Co, or Fe nanoparticles on boron-doped mono- and poly-crystalline silicon. X-ray photoemission spectroscopy proves that NH{sub 3} plasma nitrides the Si supports during nanoparticle formation which prevents excessive nanoparticle sintering/diffusion into the bulk of Si during carbon nanotube growth by chemical vapour deposition. The nitridation of Si thus leads to nanotube vertical alignment and the growth of nanotube forests by root growth mechanism.

  12. Carbon Doping of Compound Semiconductor Epitaxial Layers Grown by Metalorganic Chemical Vapor Deposition Using Carbon Tetrachloride.

    NASA Astrophysics Data System (ADS)

    Cunningham, Brian Thomas

    1990-01-01

    A dilute mixture of CCl_4 in high purity H_2 has been used as a carbon dopant source for rm Al_ {x}Ga_{1-x}As grown by low pressure metalorganic chemical vapor deposition (MOCVD). To understand the mechanism for carbon incorporation from CCl_4 doping and to provide experimental parameters for the growth of carbon doped device structures, the effects of various crystal growth parameters on CCl _4 doping have been studied, including growth temperature, growth rate, V/III ratio, Al composition, and CCl_4 flow rate. Although CCl _4 is an effective p-type dopant for MOCVD rm Al_{x}Ga_ {1-x}As, injection of CCl_4 into the reactor during growth of InP resulted in no change in the carrier concentration or carbon concentration. Abrupt, heavy carbon doping spikes in GaAs have been obtained using CCl_4 without a dopant memory effect. By annealing samples with carbon doping spikes grown within undoped, n-type, and p-type GaAs, the carbon diffusion coefficient in GaAs at 825 ^circC has been estimated and has been found to depend strongly on the GaAs background doping. Heavily carbon doped rm Al_{x}Ga _{1-x}As/GaAs superlattices have been found to be more stable against impurity induced layer disordering (IILD) than Mg or Zn doped superlattices, indicating that the low carbon diffusion coefficient limits the IILD process. Carbon doping has been used in the base region on an Npn AlGaAs/GaAs heterojunction bipolar transistor (HBT). Transistors with 3 x 10 μm self-aligned emitter fingers have been fabricated which exhibit a current gain cutoff frequency of f_ {rm t} = 26 GHz.

  13. Measurement of carrier transport and recombination parameter in heavily doped silicon

    NASA Technical Reports Server (NTRS)

    Swanson, Richard M.

    1986-01-01

    The minority carrier transport and recombination parameters in heavily doped bulk silicon were measured. Both Si:P and Si:B with bulk dopings from 10 to the 17th and 10 to the 20th power/cu cm were studied. It is shown that three parameters characterize transport in bulk heavily doped Si: the minority carrier lifetime tau, the minority carrier mobility mu, and the equilibrium minority carrier density of n sub 0 and p sub 0 (in p-type and n-type Si respectively.) However, dc current-voltage measurements can never measure all three of these parameters, and some ac or time-transient experiment is required to obtain the values of these parameters as a function of dopant density. Using both dc electrical measurements on bipolar transitors with heavily doped base regions and transients optical measurements on heavily doped bulk and epitaxially grown samples, lifetime, mobility, and bandgap narrowing were measured as a function of both p and n type dopant densities. Best fits of minority carrier mobility, bandgap narrowing and lifetime as a function of doping density (in the heavily doped range) were constructed to allow accurate modeling of minority carrier transport in heavily doped Si.

  14. Microwave plasma doping: Arsenic activation and transport in germanium and silicon

    NASA Astrophysics Data System (ADS)

    Miyoshi, Hidenori; Oka, Masahiro; Ueda, Hirokazu; Ventzek, Peter L. G.; Sugimoto, Yasuhiro; Kobayashi, Yuuki; Nakamura, Genji; Hirota, Yoshihiro; Kaitsuka, Takanobu; Kawakami, Satoru

    2016-04-01

    Microwave RLSA™ plasma doping technology has enabled conformal doping of non-planar semiconductor device structures. An important attribute of RLSA™ plasma doping is that it does not impart physical damage during processing. In this work, carrier activation measurements for AsH3 based plasma doping into silicon (Si) and germanium (Ge) using rapid thermal annealing are presented. The highest carrier concentrations are 3.6 × 1020 and 4.3 × 1018 cm-3 for Si and Ge, respectively. Secondary ion mass spectrometry depth profiles of arsenic in Ge show that intrinsic dopant diffusion for plasma doping followed by post activation anneal is much slower than for conventional ion implantation. This is indicative of an absence of defects. The comparison is based on a comparison of diffusion times at identical annealing temperatures. The absence of defects, like those generated in conventional ion implantation, in RLSA™ based doping processes makes RLSA™ doping technology useful for damage free conformal doping of topographic structures.

  15. Hydrothermal synthesis of highly nitrogen-doped carbon powder

    NASA Astrophysics Data System (ADS)

    Zhang, Deyi; Hao, Yuan; Ma, Ying; Feng, Huixia

    2012-01-01

    Nitrogen-doped carbon powder (NCP) with high and controllable dopant concentration was facilely synthesized via hydrothermal treatment of sucrose under ammonia followed by calcination. The dopant concentration of the as-synthesized carbon powder can be easily adjusted in the range of 4.37-17.82 wt.% by careful choice of the reaction conditions. The precursor with high nitrogen content was prepared by aminization reaction between sucrose and ammonia in hydrothermal condition, amine groups are successfully introduced into the precursor molecule, which groups convert finally to pyridinic-like and graphitic-like structure in the followed heat-treatment process. Various techniques, including the elemental analysis, TG-DTA, XPS, XRD, SEM and FTIR, were employed to characterize and assess the compositional and structural properties of the precursor and final nitrogen-doped materials. The present work propose a novel method for synthesis of highly nitrogen-doped carbon materials.

  16. High Performance n-Type Carbon Nanotube Field-Effect Transistors with Chemically Doped Contacts

    NASA Astrophysics Data System (ADS)

    Javey, Ali; Tu, Ryan; Farmer, Damon B.; Guo, Jing; Gordon, Roy G.; Dai, Hongjie

    2005-02-01

    Short channel (~80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-k gate dielectrics (ALD HfO2) are obtained. For nanotubes with diameter ~ 1.6 nm and bandgap ~ 0.55 eV, we obtain n-MOSFET-like devices exhibiting high on-currents due to chemically suppressed Schottky barriers at the contacts, subthreshold swing of 70mV/decade, negligible ambipolar conduction and high on/off ratios up to 10^6 at a bias voltage of 0.5V. The results compare favorably with the state-of-the-art silicon n-MOSFETs and demonstrate the potential of SWNTs for future complementary electronics. The effects of doping level on the electrical characteristics of the nanotube devices are discussed.

  17. Characterization of boron doped diamond-like carbon film by HRTEM

    NASA Astrophysics Data System (ADS)

    Li, X. J.; He, L. L.; Li, Y. S.; Yang, Q.; Hirose, A.

    2015-12-01

    Boron doped diamond-like carbon (B-DLC) film was synthesized on silicon (1 0 0) wafer by biased target ion beam deposition. High-resolution transmission electron microscopy (HRTEM) is employed to investigate the microstructure of the B-DLC thin film in cross-sectional observation. Many crystalline nanoparticles randomly dispersed and embedded in the amorphous matrix film are observed. Through chemical compositional analysis of the B-DLC film, some amount of O element is confirmed to be contained. And also, some nanoparticles with near zone axes are indexed, which are accordance with B2O phase. Therefore, the contained O element causing the B element oxidized is proposed, resulting in the formation of the nanoparticles. Our work indicates that in the B-DLC film a significant amount of the doped B element exists as boron suboxide nanoparticles.

  18. Quantum confinement of crystalline silicon nanotubes with nonuniform wall thickness: Implication to modulation doping

    NASA Astrophysics Data System (ADS)

    Yan, Binghai; Zhou, Gang; Zeng, Xiao Cheng; Wu, Jian; Gu, Bing-Lin; Duan, Wenhui

    2007-09-01

    First-principles calculations of crystalline silicon nanotubes (SiNTs) show that nonuniformity in wall thickness can cause sizable variation in the band gap as well as notable shift in the optical absorption spectrum. A unique quantum confinement behavior is observed: the electronic wave functions of the valence band maximum and conduction band minimum are due mainly to atoms located in the thicker side of the tube wall. This is advantageous to spatially separate the doping impurities from the conducting channel in doped SiNTs. Practically, the performance of the SiNT-based transistors may be substantially improved by selective p /n doping in the thinner side of the tube wall in the spirit of modulation doping.

  19. Effects of silicon nanostructure evolution on Er{sup 3+} luminescence in silicon-rich silicon oxide/Er-doped silica multilayers

    SciTech Connect

    Chang, Jee Soo; Jhe, Ji-Hong; Yang, Moon-Seung; Shin, Jung H.; Kim, Kyung Joong; Moon, Dae Won

    2006-10-30

    The effect of silicon nanostructure evolution on Er{sup 3+} luminescence is investigated by using multilayers of 2.5 nm thin SiO{sub x} (x<2) and 10 nm thin Er-doped silica (SiO{sub 2}:Er). By separating excess Si and Er atoms into separate, nanometer-thin layers, the effect of silicon nanostructure evolution on np-Si sensitized Er{sup 3+} luminescence could be investigated while keeping the microscopic Er{sup 3+} environment the same. The authors find that while the presence of np-Si is necessary for efficient sensitization, the overall quality of np-Si layer has little effect on the Er{sup 3+} luminescence. On the other hand, intrusion of np-Si into Er-doped silica layers leads to deactivation of np-Si/Er{sup 3+} interaction, suggesting that there is a limit to excess Si and Er contents that can be used.

  20. Characteristics of Nitrogen Doped Diamond-Like Carbon Films Prepared by Unbalanced Magnetron Sputtering for Electronic Devices.

    PubMed

    Lee, Jaehyeong; Choi, Byung Hui; Yun, Jung-Hyun; Park, Yong Seob

    2016-05-01

    Synthetic diamond-like carbon (DLC) is a carbon-based material used mainly in cutting tool coatings and as an abrasive material. The market for DLC has expanded into electronics, optics, and acoustics because of its distinct electrical and optical properties. In this work, n-doped DLC (N:DLC) films were deposited on p-type silicon substrates using an unbalanced magnetron sputtering (UBMS) method. We investigated the effect of the working pressure on the microstructure and electrical properties of n-doped DLC films. The structural properties of N:DLC films were investigated by Raman spectroscopy and SEM-EDX, and the electrical properties of films were investigated by observing the changes in the resistivity and current-voltage (I-V) properties. The N:DLC films prepared by UBMS in this study demonstrated good conducting and physical properties with n-doping.

  1. Characteristics of Nitrogen Doped Diamond-Like Carbon Films Prepared by Unbalanced Magnetron Sputtering for Electronic Devices.

    PubMed

    Lee, Jaehyeong; Choi, Byung Hui; Yun, Jung-Hyun; Park, Yong Seob

    2016-05-01

    Synthetic diamond-like carbon (DLC) is a carbon-based material used mainly in cutting tool coatings and as an abrasive material. The market for DLC has expanded into electronics, optics, and acoustics because of its distinct electrical and optical properties. In this work, n-doped DLC (N:DLC) films were deposited on p-type silicon substrates using an unbalanced magnetron sputtering (UBMS) method. We investigated the effect of the working pressure on the microstructure and electrical properties of n-doped DLC films. The structural properties of N:DLC films were investigated by Raman spectroscopy and SEM-EDX, and the electrical properties of films were investigated by observing the changes in the resistivity and current-voltage (I-V) properties. The N:DLC films prepared by UBMS in this study demonstrated good conducting and physical properties with n-doping. PMID:27483841

  2. TFT threshold voltage adjustment with in-situ doped PVD silicon films

    NASA Astrophysics Data System (ADS)

    Droes, Steven R. T.; Atkinson, Mikel M.; Guthrie, Patrick R.; Crowder, Mark A.; Voutsas, Apostolos T.

    2003-05-01

    For laser crystallization of amorphous silicon, plasma enhanced chemical vapor deposition (PECVD) is the method of choice for a-Si precursor deposition. This situation is likely to change, however, with the transition to higher performance polysilicon material produced via advanced laser annealing techniques. Two factors make the use of sputtered a-Si precursors particularly attractive for laser annealing technologies. First, owing to their low hydrogen content, sputtered a-Si films are uniquely suited as precursors for laser crystallization techniques. Second, the ability to dope the target material (and thus produce doped silicon films) allows for control of the threshold voltage of the resulting TFTs. To that end we evaluated sputter deposited doped silicon as an a-Si precursor for excimer laser annealing. We established process conditions necessary to shift the Vth of both N and P transistors such that they were centered near zero. In addition we determined levels of target doping, DC power, and chamber pressure that produced TFT's with balanced N and P Vth values and satisfactory mobility. We also found that the off-state leakage and subthreshold slope of the PVD films were better than PECVD deposited films.

  3. Optically detected cyclotron resonance in heavily boron-doped silicon nanostructures on n-Si (100)

    SciTech Connect

    Bagraev, N. T. Kuzmin, R. V.; Gurin, A. S.; Klyachkin, L. E.; Malyarenko, A. M.; Mashkov, V. A.

    2014-12-15

    Electron and hole cyclotron resonance at a frequency of 94 GHz is detected by a change in the intensity of photoluminescence lines whose positions are identical to those of dislocation luminescence lines D1 and D2 in single-crystal silicon and in heavily boron-doped silicon nanostructures on the Si (100) surface. The angular dependence of the spectrum of the optically detected cyclotron resonance corresponds to the tensor of the electron and hole effective mass in single-crystal silicon, and the resonance-line width indicates long carrier free-path times close to 100 ps. The results obtained are discussed within the framework of the interrelation of the electron-vibration coupling to charge and spin correlations in quasi-one-dimensional chains of dangling bonds in silicon.

  4. Odorant design based on the carbon/silicon switch strategy.

    PubMed

    Tacke, Reinhold; Metz, Stefan

    2008-06-01

    Silicon chemistry has been demonstrated to be a novel source of chemical diversity in odorant design. The carbon/silicon switch strategy, i.e., sila-replacement in known odorants, is one of the methods currently used for the development of silicon-based odorants. Examples resulting from this strategy are sila-coranol, sila-dimetol, sila-linalool, sila-muguetalcohol, sila-majantol, sila-hydratropyl acetate, sila-bourgeonal, sila-lilial, disila-versalide, and disila-okoumal.

  5. Radiation tolerance of boron doped dendritic web silicon solar cells

    NASA Technical Reports Server (NTRS)

    Rohatgi, A.

    1980-01-01

    The potential of dendritic web silicon for giving radiation hard solar cells is compared with the float zone silicon material. Solar cells with n(+)-p-P(+) structure and approximately 15% (AMl) efficiency were subjected to 1 MeV electron irradiation. Radiation tolerance of web cell efficiency was found to be at least as good as that of the float zone silicon cell. A study of the annealing behavior of radiation-induced defects via deep level transient spectroscopy revealed that E sub v + 0.31 eV defect, attributed to boron-oxygen-vacancy complex, is responsible for the reverse annealing of the irradiated cells in the temperature range of 150 to 350 C.

  6. Urbach absorption edge in epitaxial erbium-doped silicon

    SciTech Connect

    Shmagin, V. B. Kudryavtsev, K. E.; Shengurov, D. V.; Krasilnik, Z. F.

    2015-02-07

    We investigate the dependencies of the photocurrent in Si:Er p-n junctions on the energy of the incident photons. The exponential absorption edge (Urbach edge) just below fundamental edge of silicon was observed in the absorption spectra of epitaxial Si:Er layers grown at 400–600 C. It is shown that the introduction of erbium significantly enhances the structural disorder in the silicon crystal which was estimated from the slope of the Urbach edge. We discuss the possible nature of the structural disorder in Si:Er and a new mechanism of erbium excitation, which does not require the presence of deep levels in the band gap of silicon.

  7. Alkali-Doped Lithium Orthosilicate Sorbents for Carbon Dioxide Capture.

    PubMed

    Yang, Xinwei; Liu, Wenqiang; Sun, Jian; Hu, Yingchao; Wang, Wenyu; Chen, Hongqiang; Zhang, Yang; Li, Xian; Xu, Minghou

    2016-09-01

    New alkali-doped (Na2 CO3 and K2 CO3 ) Li4 SiO4 sorbents with excellent performance at low CO2 concentrations were synthesized. We speculate that alkali doping breaks the orderly arrangement of the Li4 SiO4 crystals, hence increasing its specific surface area and the number of pores. It was shown that 10 wt % Na2 CO3 and 5 wt % K2 CO3 are the optimal additive ratios for doped sorbents to attain the highest conversions. Moreover, under 15 vol % CO2 , the doped sorbents present clearly faster absorption rates and exhibit stable cyclic durability with impressive conversions of about 90 %, at least 20 % higher than that of non-doped Li4 SiO4 . The attained conversions are also 10 % higher than the reported highest conversion of 80 % on doped Li4 SiO4 . The performance of Li4 SiO4 is believed to be enhanced by the eutectic melt, and it is the first time that the existence of eutectic Li/Na or Li/K carbonate on doped sorbents when absorbing CO2 at high temperature is confirmed; this was done using systematical analysis combining differential scanning calorimetry with in situ powder X-ray diffraction. PMID:27531239

  8. Observation of a photoinduced, resonant tunneling effect in a carbon nanotube–silicon heterojunction

    PubMed Central

    Ambrosio, Antonio; Boscardin, Maurizio; Castrucci, Paola; Crivellari, Michele; Cilmo, Marco; De Crescenzi, Maurizio; De Nicola, Francesco; Fiandrini, Emanuele; Grossi, Valentina; Maddalena, Pasqualino; Passacantando, Maurizio; Santucci, Sandro; Scarselli, Manuela; Valentini, Antonio

    2015-01-01

    Summary A significant resonant tunneling effect has been observed under the 2.4 V junction threshold in a large area, carbon nanotube–silicon (CNT–Si) heterojunction obtained by growing a continuous layer of multiwall carbon nanotubes on an n-doped silicon substrate. The multiwall carbon nanostructures were grown by a chemical vapor deposition (CVD) technique on a 60 nm thick, silicon nitride layer, deposited on an n-type Si substrate. The heterojunction characteristics were intensively studied on different substrates, resulting in high photoresponsivity with a large reverse photocurrent plateau. In this paper, we report on the photoresponsivity characteristics of the device, the heterojunction threshold and the tunnel-like effect observed as a function of applied voltage and excitation wavelength. The experiments are performed in the near-ultraviolet to near-infrared wavelength range. The high conversion efficiency of light radiation into photoelectrons observed with the presented layout allows the device to be used as a large area photodetector with very low, intrinsic dark current and noise. PMID:25821710

  9. Observation of a photoinduced, resonant tunneling effect in a carbon nanotube-silicon heterojunction.

    PubMed

    Aramo, Carla; Ambrosio, Antonio; Ambrosio, Michelangelo; Boscardin, Maurizio; Castrucci, Paola; Crivellari, Michele; Cilmo, Marco; De Crescenzi, Maurizio; De Nicola, Francesco; Fiandrini, Emanuele; Grossi, Valentina; Maddalena, Pasqualino; Passacantando, Maurizio; Santucci, Sandro; Scarselli, Manuela; Valentini, Antonio

    2015-01-01

    A significant resonant tunneling effect has been observed under the 2.4 V junction threshold in a large area, carbon nanotube-silicon (CNT-Si) heterojunction obtained by growing a continuous layer of multiwall carbon nanotubes on an n-doped silicon substrate. The multiwall carbon nanostructures were grown by a chemical vapor deposition (CVD) technique on a 60 nm thick, silicon nitride layer, deposited on an n-type Si substrate. The heterojunction characteristics were intensively studied on different substrates, resulting in high photoresponsivity with a large reverse photocurrent plateau. In this paper, we report on the photoresponsivity characteristics of the device, the heterojunction threshold and the tunnel-like effect observed as a function of applied voltage and excitation wavelength. The experiments are performed in the near-ultraviolet to near-infrared wavelength range. The high conversion efficiency of light radiation into photoelectrons observed with the presented layout allows the device to be used as a large area photodetector with very low, intrinsic dark current and noise. PMID:25821710

  10. Low-temperature micro-photoluminescence spectroscopy on laser-doped silicon with different surface conditions

    NASA Astrophysics Data System (ADS)

    Han, Young-Joon; Franklin, Evan; Fell, Andreas; Ernst, Marco; Nguyen, Hieu T.; Macdonald, Daniel

    2016-04-01

    Low-temperature micro-photoluminescence spectroscopy (μ-PLS) is applied to investigate shallow layers of laser-processed silicon for solar cell applications. Micron-scale measurement (with spatial resolution down to 1 μm) enables investigation of the fundamental impact of laser processing on the electronic properties of silicon as a function of position within the laser-processed region, and in particular at specific positions such as at the boundary/edge of processed and unprocessed regions. Low-temperature μ-PLS enables qualitative analysis of laser-processed regions by identifying PLS signals corresponding to both laser-induced doping and laser-induced damage. We show that the position of particular luminescence peaks can be attributed to band-gap narrowing corresponding to different levels of subsurface laser doping, which is achieved via multiple 248 nm nanosecond excimer laser pulses with fluences in the range 1.5-4 J/cm2 and using commercially available boron-rich spin-on-dopant precursor films. We demonstrate that characteristic defect PL spectra can be observed subsequent to laser doping, providing evidence of laser-induced crystal damage. The impact of laser parameters such as fluence and number of repeat pulses on laser-induced damage is also analyzed by observing the relative level of defect PL spectra and absolute luminescence intensity. Luminescence owing to laser-induced damage is observed to be considerably larger at the boundaries of laser-doped regions than at the centers, highlighting the significant role of the edges of laser-doped region on laser doping quality. Furthermore, by comparing the damage signal observed after laser processing of two different substrate surface conditions (chemically-mechanically polished and tetramethylammonium hydroxide etched), we show that wafer preparation can be an important factor impacting the quality of laser-processed silicon and solar cells.

  11. Heavy doping effects in high efficiency silicon solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.; Neugroschel, A.; Landsberg, P. T.; San, C. T.

    1984-01-01

    A model for bandgap shrinkage in semiconductors is developed and applied to silicon. A survey of earlier experiments, and of new ones, give an agreement between the model and experiments on n- and p-type silicon which is good as far as transport measurements in the 300 K range. The discrepancies between theory and experiment are no worse than the discrepancies between the experimental results of various authors. It also gives a good account of recent, optical determinations of band gap shrinkage at 5 K.

  12. Reactive Infiltration of Silicon Melt Through Microporous Amorphous Carbon Preforms

    NASA Technical Reports Server (NTRS)

    Sangsuwan, P.; Tewari, S. N.; Gatica, J. E.; Singh, M.; Dickerson, R.

    1999-01-01

    The kinetics of unidirectional capillary infiltration of silicon melt into microporous carbon preforms have been investigated as a function of the pore morphology and melt temperature. The infiltrated specimens showed alternating bands of dark and bright regions, which corresponded to the unreacted free carbon and free silicon regions, respectively. The decrease in the infiltration front velocity for increasing infiltration distances, is in qualitative agreement with the closed-form solution of capillarity driven fluid flow through constant cross section cylindrical pores. However, drastic changes in the thermal response and infiltration front morphologies were observed for minute differences in the preforms microstructure. This suggests the need for a dynamic percolation model that would account for the exothermic nature of the silicon-carbon chemical reaction and the associated pore closing phenomenon.

  13. Thermodynamics of a phase transition of silicon nanoparticles at the annealing and carbonization of porous silicon

    SciTech Connect

    Nagornov, Yu. S.

    2015-12-15

    The formation of SiC nanocrystals of the cubic modification in the process of high-temperature carbonization of porous silicon has been analyzed. A thermodynamic model has been proposed to describe the experimental data obtained by atomic-force microscopy, Raman scattering, spectral analysis, Auger spectroscopy, and X-ray diffraction spectroscopy. It has been shown that the surface energy of silicon nanoparticles and quantum filaments is released in the process of annealing and carbonization. The Monte Carlo simulation has shown that the released energy makes it possible to overcome the nucleation barrier and to form SiC nanocrystals. The processes of laser annealing and electron irradiation of carbonized porous silicon have been analyzed.

  14. The observation of structural defects in neutron-irradiated lithium-doped silicon solar cells

    NASA Technical Reports Server (NTRS)

    Sargent, G. A.

    1971-01-01

    Electron microscopy has been used to observe the distribution and morphology of lattice defects introduced into lithium-doped silicon solar cells by neutron irradiation. Upon etching the surface of the solar cells after irradiation, crater-like defects are observed that are thought to be associated with the space charge region around vacancy clusters. Thermal annealing experiments showed that the crater defects were stable in the temperature range 300 to 1200 K in all of the lithium-doped samples. Some annealing of the crater defects was observed to occur in the undoped cells which were irradiated at the lowest doses.

  15. Formation of Carbon Nanostructures in Cobalt- and Nickel-Doped Carbon Aerogels

    SciTech Connect

    Fu, R; Baumann, T F; Cronin, S; Dresselhaus, G; Dresselhaus, M; Satcher, Jr., J H

    2004-11-09

    We have prepared carbon aerogels (CAs) doped with cobalt or nickel through sol-gel polymerization of formaldehyde with the potassium salt of 2,4-dihydroxybenzoic acid, followed by ion-exchange with M(NO{sub 3}){sub 2} (where M = Co{sup 2+} or Ni{sup 2+}), supercritical drying with liquid CO{sub 2} and carbonization at temperatures between 400 C and 1050 C under an N{sub 2} atmosphere. The nanostructures of these metal-doped carbon aerogels were characterized by elemental analysis, nitrogen adsorption, high resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). Metallic nickel and cobalt nanoparticles are generated during the carbonization process at about 400 C and 450 C, respectively, forming nanoparticles that are {approx}4 nm in diameter. The sizes and size dispersion of the metal particles increase with increasing carbonization temperatures for both materials. The carbon frameworks of the Ni- and Co-doped aerogels carbonized below 600 C mainly consist of interconnected carbon particles with a size of 15 to 30 nm. When the samples are pyrolyzed at 1050 C, the growth of graphitic nanoribbons with different curvatures is observed in the Ni and Co-doped carbon aerogel materials. The distance of graphite layers in the nanoribbons is about 0.38 nm. These metal-doped CAs retain the overall open cell structure of metal-free CAs, exhibiting high surface areas and pore diameters in the micro and mesoporic region.

  16. Orbitronics: the Intrinsic Orbital Hall Effect in p-Doped Silicon

    SciTech Connect

    Bernevig, B.Andrei; Hughes, Taylor L.; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-01-15

    The spin Hall effect depends crucially on the intrinsic spin-orbit coupling of the energy band. Because of the smaller spin-orbit coupling in silicon, the spin Hall effect is expected to be much reduced. We show that the electric field in p-doped silicon can induce a dissipationless orbital current in a fashion reminiscent of the spin Hall effect. The vertex correction due to impurity scattering vanishes and the effect is therefore robust against disorder. The orbital Hall effect can lead to the accumulation of local orbital momentum at the edge of the sample, and can be detected by the Kerr effect.

  17. Design and burn-up analyses of new type holder for silicon neutron transmutation doping.

    PubMed

    Komeda, Masao; Arai, Masaji; Tamai, Kazuo; Kawasaki, Kozo

    2016-07-01

    We have developed a new silicon irradiation holder with a neutron filter to increase the irradiation efficiency. The neutron filter is made of an alloy of aluminum and B4C particles. We fabricated a new holder based on the results of design analyses. This filter has limited use in applications requiring prolonged use due to a decrease in the amount of (10)B in B4C particles. We investigated the influence of (10)B reduction on doping distribution in a silicon ingot by using the Monte Carlo Code MVP. PMID:27131643

  18. Carbon--silicon coating alloys for improved irradiation stability

    DOEpatents

    Bokros, J.C.

    1973-10-01

    For ceramic nuclear fuel particles, a fission product-retaining carbon-- silicon alloy coating is described that exhibits low shrinkage after exposure to fast neutron fluences of 1.4 to 4.8 x 10/sup 21/ n/cm/sup 2/ (E = 0.18 MeV) at irradiation temperatures from 950 to 1250 deg C. Isotropic pyrolytic carbon containing from 18 to 34 wt% silicon is co-deposited from a gaseous mixiure of propane, helium, and silane at a temperature of 1350 to 1450 deg C. (Official Gazette)

  19. Iron-Doped Carbon Aerogels: Novel Porous Substrates for Direct Growth of Carbon Nanotubes

    SciTech Connect

    Steiner, S A; Baumann, T F; Kong, J; Satcher, J H; Dresselhaus, M S

    2007-02-15

    We present the synthesis and characterization of Fe-doped carbon aerogels (CAs) and demonstrate the ability to grow carbon nanotubes directly on monoliths of these materials to afford novel carbon aerogel-carbon nanotube composites. Preparation of the Fe-doped CAs begins with the sol-gel polymerization of the potassium salt of 2,4-dihydroxybenzoic acid with formaldehyde, affording K{sup +}-doped gels that can then be converted to Fe{sup 2+}- or Fe{sup 3+}-doped gels through an ion exchange process, dried with supercritical CO{sub 2} and subsequently carbonized under an inert atmosphere. Analysis of the Fe-doped CAs by TEM, XRD and XPS revealed that the doped iron species are reduced during carbonization to form metallic iron and iron carbide nanoparticles. The sizes and chemical composition of the reduced Fe species were related to pyrolysis temperature as well as the type of iron salt used in the ion exchange process. Raman spectroscopy and XRD analysis further reveal that, despite the presence of the Fe species, the CA framework is not significantly graphitized during pyrolysis. The Fe-doped CAs were subsequently placed in a thermal CVD reactor and exposed to a mixture of CH{sub 4} (1000 sccm), H{sub 2} (500 sccm), and C{sub 2}H{sub 4} (20 sccm) at temperatures ranging from 600 to 800 C for 10 minutes, resulting in direct growth of carbon nanotubes on the aerogel monoliths. Carbon nanotubes grown by this method appear to be multiwalled ({approx}25 nm in diameter and up to 4 mm long) and grow through a tip-growth mechanism that pushes catalytic iron particles out of the aerogel framework. The highest yield of CNTs were grown on Fe-doped CAs pyrolyzed at 800 C treated at CVD temperatures of 700 C.

  20. Iron-Doped Carbon Aerogels: Novel Porous Substrates for Direct Growth of Carbon Nanotubes

    DOE R&D Accomplishments Database

    Steiner, S. A.; Baumann, T. F.; Kong, J.; Satcher, J. H.; Dresselhaus, M. S.

    2007-02-20

    We present the synthesis and characterization of Fe-doped carbon aerogels (CAs) and demonstrate the ability to grow carbon nanotubes directly on monoliths of these materials to afford novel carbon aerogel-carbon nanotube composites. Preparation of the Fe-doped CAs begins with the sol-gel polymerization of the potassium salt of 2,4-dihydroxybenzoic acid with formaldehyde, affording K{sup +}-doped gels that can then be converted to Fe{sup 2+}- or Fe{sup 3+}-doped gels through an ion exchange process, dried with supercritical CO{sub 2} and subsequently carbonized under an inert atmosphere. Analysis of the Fe-doped CAs by TEM, XRD and XPS revealed that the doped iron species are reduced during carbonization to form metallic iron and iron carbide nanoparticles. The sizes and chemical composition of the reduced Fe species were related to pyrolysis temperature as well as the type of iron salt used in the ion exchange process. Raman spectroscopy and XRD analysis further reveal that, despite the presence of the Fe species, the CA framework is not significantly graphitized during pyrolysis. The Fe-doped CAs were subsequently placed in a thermal CVD reactor and exposed to a mixture of CH{sub 4} (1000 sccm), H{sub 2} (500 sccm), and C{sub 2}H{sub 4} (20 sccm) at temperatures ranging from 600 to 800 C for 10 minutes, resulting in direct growth of carbon nanotubes on the aerogel monoliths. Carbon nanotubes grown by this method appear to be multiwalled ({approx}25 nm in diameter and up to 4 mm long) and grow through a tip-growth mechanism that pushes catalytic iron particles out of the aerogel framework. The highest yield of CNTs were grown on Fe-doped CAs pyrolyzed at 800 C treated at CVD temperatures of 700 C.

  1. Nanoscale Etching and Indentation of Silicon Surfaces with Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Dzegilenko, Fedor N.; Srivastava, Deepak; Saini, Subhash

    1998-01-01

    The possibility of nanolithography of silicon and germanium surfaces with bare carbon nanotube tips of scanning probe microscopy devices is considered with large scale classical molecular dynamics (MD) simulations employing Tersoff's reactive many-body potential for heteroatomic C/Si/Ge system. Lithography plays a key role in semiconductor manufacturing, and it is expected that future molecular and quantum electronic devices will be fabricated with nanolithographic and nanodeposition techniques. Carbon nanotubes, rolled up sheets of graphene made of carbon, are excellent candidates for use in nanolithography because they are extremely strong along axial direction and yet extremely elastic along radial direction. In the simulations, the interaction of a carbon nanotube tip with silicon surfaces is explored in two regimes. In the first scenario, the nanotubes barely touch the surface, while in the second they are pushed into the surface to make "nano holes". The first - gentle scenario mimics the nanotube-surface chemical reaction induced by the vertical mechanical manipulation of the nanotube. The second -digging - scenario intends to study the indentation profiles. The following results are reported in the two cases. In the first regime, depending on the surface impact site, two major outcomes outcomes are the selective removal of either a single surface atom or a surface dimer off the silicon surface. In the second regime, the indentation of a silicon substrate by the nanotube is observed. Upon the nanotube withdrawal, several surface silicon atoms are adsorbed at the tip of the nanotube causing significant rearrangements of atoms comprising the surface layer of the silicon substrate. The results are explained in terms of relative strength of C-C, C-Si, and Si-Si bonds. The proposed method is very robust and does not require applied voltage between the nanotube tips and the surface. The implications of the reported controllable etching and hole-creating for

  2. Imaging doped silicon test structures using low energy electron microscopy.

    SciTech Connect

    Nakakura, Craig Yoshimi; Anderson, Meredith Lynn; Kellogg, Gary Lee

    2010-01-01

    This document is the final SAND Report for the LDRD Project 105877 - 'Novel Diagnostic for Advanced Measurements of Semiconductor Devices Exposed to Adverse Environments' - funded through the Nanoscience to Microsystems investment area. Along with the continuous decrease in the feature size of semiconductor device structures comes a growing need for inspection tools with high spatial resolution and high sample throughput. Ideally, such tools should be able to characterize both the surface morphology and local conductivity associated with the structures. The imaging capabilities and wide availability of scanning electron microscopes (SEMs) make them an obvious choice for imaging device structures. Dopant contrast from pn junctions using secondary electrons in the SEM was first reported in 1967 and more recently starting in the mid-1990s. However, the serial acquisition process associated with scanning techniques places limits on the sample throughput. Significantly improved throughput is possible with the use of a parallel imaging scheme such as that found in photoelectron emission microscopy (PEEM) and low energy electron microscopy (LEEM). The application of PEEM and LEEM to device structures relies on contrast mechanisms that distinguish differences in dopant type and concentration. Interestingly, one of the first applications of PEEM was a study of the doping of semiconductors, which showed that the PEEM contrast was very sensitive to the doping level and that dopant concentrations as low as 10{sup 16} cm{sup -3} could be detected. More recent PEEM investigations of Schottky contacts were reported in the late 1990s by Giesen et al., followed by a series of papers in the early 2000s addressing doping contrast in PEEM by Ballarotto and co-workers and Frank and co-workers. In contrast to PEEM, comparatively little has been done to identify contrast mechanisms and assess the capabilities of LEEM for imaging semiconductor device strictures. The one exception is the

  3. Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E. (Inventor); Grunthaner, Paula J. (Inventor); Grunthaner, Frank J. (Inventor); Terhune, Robert W. (Inventor); Hecht, Michael H. (Inventor)

    1994-01-01

    The backside surface potential well of a backside-illuminated CCD is confined to within about half a nanometer of the surface by using molecular beam epitaxy (MBE) to grow a delta-doped silicon layer on the back surface. Delta-doping in an MBE process is achieved by temporarily interrupting the evaporated silicon source during MBE growth without interrupting the evaporated p+ dopant source (e.g., boron). This produces an extremely sharp dopant profile in which the dopant is confined to only a few atomic layers, creating an electric field high enough to confine the backside surface potential well to within half a nanometer of the surface. Because the probability of UV-generated electrons being trapped by such a narrow potential well is low, the internal quantum efficiency of the CCD is nearly 100% throughout the UV wavelength range. Furthermore, the quantum efficiency is quite stable.

  4. A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires

    PubMed Central

    2012-01-01

    In this paper, a silicon-oxide-nitride-silicon nonvolatile memory constructed on an n+-poly-Si nanowire [NW] structure featuring a junctionless [JL] configuration is presented. The JL structure is fulfilled by employing only one in situ heavily phosphorous-doped poly-Si layer to simultaneously serve as source/drain regions and NW channels, thus greatly simplifying the manufacturing process and alleviating the requirement of precise control of the doping profile. Owing to the higher carrier concentration in the channel, the developed JL NW device exhibits significantly enhanced programming speed and larger memory window than its counterpart with conventional undoped-NW-channel. Moreover, it also displays acceptable erase and data retention properties. Hence, the desirable memory characteristics along with the much simplified fabrication process make the JL NW memory structure a promising candidate for future system-on-panel and three-dimensional ultrahigh density memory applications. PMID:22373446

  5. Hypervalent surface interactions for colloidal stability and doping of silicon nanocrystals

    PubMed Central

    Wheeler, Lance M.; Neale, Nathan R.; Chen, Ting; Kortshagen, Uwe R.

    2013-01-01

    Colloidal semiconductor nanocrystals have attracted attention for cost-effective, solution-based deposition of quantum-confined thin films for optoelectronics. However, two significant challenges must be addressed before practical nanocrystal-based devices can be realized. The first is coping with the ligands that terminate the nanocrystal surfaces. Though ligands provide the colloidal stability needed to cast thin films from solution, these ligands dramatically hinder charge carrier transport in the resulting film. Second, after a conductive film is achieved, doping has proven difficult for further control of the optoelectronic properties of the film. Here we report the ability to confront both of these challenges by exploiting the ability of silicon to engage in hypervalent interactions with hard donor molecules. For the first time, we demonstrate the significant potential of applying the interaction to the nanocrystal surface. In this study, hypervalent interactions are shown to provide colloidal stability as well as doping of silicon nanocrystals. PMID:23893292

  6. Migration of excited charge carriers in arrays of phosphorus-doped silicon nanocrystals

    SciTech Connect

    Belyakov, V. A. Konakov, A. A.; Burdov, V. A.

    2010-11-15

    The rate of tunnel migration of excited charge carriers (electrons and holes) in the array of silicon nanocrystals doped with phosphorus is calculated. It is shown that, starting from certain phosphorus concentrations dependent on the relation between the dimensions of the emitting and accepting nanocrystals, the rate of tunneling of electrons sharply decreases (by several orders of magnitude) and becomes lower than the rate of interband radiative recombination

  7. Factors affecting light-induced excess conductivity in doping-modulated amorphous silicon superlattices

    SciTech Connect

    Su, F.; Levine, S.; Vanier, P.E.; Kampas, F.J.

    1986-03-15

    Doping-modulated amorphous silicon semiconducting films which exhibit the phenomenon of light-induced excess conductivity (LEC) have been made by silane glow discharge in a single-chamber system. This phenomenon shows a strong dependence on substrate temperature and process gas composition. The LEC effect decreases for very small and very large layer thickness. There also seems to be an optimum defect density for producing large effects.

  8. Strong mid-infrared optical absorption by supersaturated sulfur doping in silicon

    NASA Astrophysics Data System (ADS)

    Umezu, I.; Kohno, A.; Warrender, J. M.; Takatori, Y.; Hirao, Y.; Nakagawa, S.; Sugimura, A.; Charnvanichborikarn, S.; Williams, J. S.; Aziz, M. J.

    2011-12-01

    Single crystalline silicon supersaturated with sulfur was prepared by ion implantation followed by pulsed laser melting and rapid solidification. A strong and broad optical absorption band and free-carrier absorption appeared for this sample around 0.5 eV and below 0.2 eV, respectively. A possible candidate for the origin of the 0.5 eV band is the formation of an impurity band by supersaturated doping.

  9. Silicon Whisker and Carbon Nanofiber Composite Anode

    NASA Technical Reports Server (NTRS)

    Ma, Junqing (Inventor); Newman, Aron (Inventor); Lennhoff, John (Inventor)

    2015-01-01

    A carbon nanofiber can have a surface and include at least one crystalline whisker extending from the surface of the carbon nanofiber. A battery anode composition can be formed from a plurality of carbon nanofibers each including a plurality of crystalline whiskers.

  10. Synthesize of N-doped Carbon nanotube according to gas flow rate by Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Kim, J. B.; Kim, C. D.; Kong, S. J.; Kim, J. H.; Min, B. K.; Jung, W. S.; Lee, H. R.

    2011-12-01

    Nitrogen-doped (N-doped) Carbon nanotubes (CNTs) have been prepared by Thermal Chemical Vapor Deposition (CVD). As doping accompanies with the recombination of carbon atoms into CNTs in the CVD process, N atoms can be substitutionally doped into the CNTs lattice, which is hard to realize by other synthetic methods. The synthesis technique and the characteristic analysis of N-doped CNT will move up the industrialization and the basic study of CNT. We will elucidate the basic properties of CNT such as the structural characteristics of the N-doped CNT material and study for the industrial application of the N-doped CNTs to the electrode of fuel cell.

  11. Electrochemical capacitance voltage measurements in highly doped silicon and silicon-germanium alloys

    NASA Astrophysics Data System (ADS)

    Sermage, B.; Essa, Z.; Taleb, N.; Quillec, M.; Aubin, J.; Hartmann, J. M.; Veillerot, M.

    2016-04-01

    The electrochemical capacitance voltage technique has been used on highly boron doped SiGe and Si layers. Although the boron concentration is constant over the space charge depth, the 1/C2 versus voltage curves are not linear. They indeed present a negative curvature. This can be explained by the existence of deep acceptors which ionise under a high electric field (large inverse voltage) and not at a low inverse voltage. The measured doping concentration in the electrochemical capacitance voltage increases strongly as the inverse voltage increases. Thanks to a comparison with the boron concentration measured by secondary ions mass spectrometry, we show that the relevant doping concentrations in device layers are obtained for small inverse voltage in agreement with the existence of deep acceptors. At the large inverse voltage, the measured doping can be more than twice larger than the boron concentration measured with a secondary ion mass spectroscopy.

  12. Effects of carbon doping on the electronic properties of boron nitride nanotubes: Tight binding calculation

    NASA Astrophysics Data System (ADS)

    Chegel, Raad

    2016-10-01

    The electronic properties of pure and carbon doped zigzag and armchair Boron Nitride Nanotubes (BNNTs) have been investigated based on tight binding formalism. It was found that the band gap is reduced due to substitution of Boron or Nitrogen atoms by carbon atoms and the doping effects of B- and N-substituted BNNTs are different. The applied electric field converts the carbon doped BNNTs from semiconductor to metal. The gap energy reduction shows an identical dependence to electric field and doping for both armchair and zigzag carbon doped BNNTs. Our results indicate that the band gap of carbon doped BNNTs is a function of the Impurity concentration, electric field strength and the direction between the electric field and dopant location. The band gap for C-doped BNNTs with four carbon atoms decreases linearly but for two carbon atoms, it is constant at first then decreases linearly.

  13. Doping strategies to control A-centres in silicon: insights from hybrid density functional theory.

    PubMed

    Wang, H; Chroneos, A; Londos, C A; Sgourou, E N; Schwingenschlögl, U

    2014-05-14

    Hybrid density functional theory is used to gain insights into the interaction of intrinsic vacancies (V) and oxygen-vacancy pairs (VO, known as A-centres) with the dopants (D) germanium (Ge), tin (Sn), and lead (Pb) in silicon (Si). We determine the structures as well as binding and formation energies of the DVO and DV complexes. The results are discussed in terms of the density of states and in view of the potential of isovalent doping to control A-centres in Si. We argue that doping with Sn is the most efficient isovalent doping strategy to suppress A-centres by the formation of SnVO complexes, as these are charge neutral and strongly bound.

  14. Surface recombination velocity and diffusion length of minority carriers in heavily doped silicon layers

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Watanabe, M.; Actor, G.

    1977-01-01

    Quantitative analysis of the electron beam-induced current and the dependence of the effective diffusion length of the minority carriers on the penetration depth of the electron beam were employed for the analysis of the carrier recombination characteristics in heavily doped silicon layers. The analysis is based on the concept of the effective excitation strength of the carriers which takes into consideration all possible recombination sources. Two dimensional mapping of the surface recombination velocity of P-diffused Si layers will be presented together with a three dimensional mapping of minority carrier lifetime in ion implanted Si. Layers heavily doped with As exhibit improved recombination characteristics as compared to those of the layers doped with P.

  15. Heteroatom-doped highly porous carbon from human urine

    NASA Astrophysics Data System (ADS)

    Chaudhari, Nitin Kaduba; Song, Min Young; Yu, Jong-Sung

    2014-06-01

    Human urine, otherwise potentially polluting waste, is an universal unused resource in organic form disposed by the human body. We present for the first time ``proof of concept'' of a convenient, perhaps economically beneficial, and innovative template-free route to synthesize highly porous carbon containing heteroatoms such as N, S, Si, and P from human urine waste as a single precursor for carbon and multiple heteroatoms. High porosity is created through removal of inherently-present salt particles in as-prepared ``Urine Carbon'' (URC), and multiple heteroatoms are naturally doped into the carbon, making it unnecessary to employ troublesome expensive pore-generating templates as well as extra costly heteroatom-containing organic precursors. Additionally, isolation of rock salts is an extra bonus of present work. The technique is simple, but successful, offering naturally doped conductive hierarchical porous URC, which leads to superior electrocatalytic ORR activity comparable to state of the art Pt/C catalyst along with much improved durability and methanol tolerance, demonstrating that the URC can be a promising alternative to costly Pt-based electrocatalyst for ORR. The ORR activity can be addressed in terms of heteroatom doping, surface properties and electrical conductivity of the carbon framework.

  16. A novel dynamically configurable electrostatically doped silicon nanowire impact ionization MOS

    NASA Astrophysics Data System (ADS)

    Singh, Sangeeta; Kondekar, P. N.

    2015-12-01

    In this paper, a novel dynamically configurable, electrostatically doped silicon nanowire impact ionization MOS (E-SiNW-IMOS) based on dopant-free technology is investigated. The key attribute of the proposed device is its polarity controlled dynamic reconfigurability of charge gating mechanism from impact ionization to band-to-band tunneling. This ensures that same device can act as E-SiNW-IMOS or electrostatically doped silicon nanowire Tunnel FET (E-SiNW-TFET) depending on bias conditions. It consists of an undoped SiNW and three independent all-around-gates two polarity gates to realize n+ and p+ regions in undoped nanowire by electrostatic doping and a control gate to initiate impact ionization/tunneling. Combination of biases applied at polarity gates and control gate configures both the operating mechanism and device polarity. This enables the potential co-integration of IMOS (offering high gain and ultra steep switching behavior) and TFET (with extremely low leakage current and power-efficiency) on a single chip. A calibrated 3-D TCAD study reveals consistent static device behavior for both the devices considered. It offers a simplified fabrication process as it avoids the need of ion implantation and thermal annealing, thereby reducing thermal budget. Further, it is highly resilient towards process variations, doping control issues, voltage variations and random dopant fluctuations (RDF).

  17. Photoluminescence of monocrystalline and stain-etched porous silicon doped with high temperature annealed europium

    NASA Astrophysics Data System (ADS)

    Guerrero-Lemus, R.; Montesdeoca-Santana, A.; González-Díaz, B.; Díaz-Herrera, B.; Velázquez, J. J.; Hernández-Rodríguez, C.; Jiménez-Rodríguez, E.

    2011-08-01

    In this work, for the first time, the photoluminescent emission and excitation spectra of non-textured layers and stain-etched porous silicon layers (PSLs) doped with high temperature annealed europium (Eu) are evaluated. The PSLs are evaluated as a host for rare earth ions and as an antireflection coating. The applied doping process, which consists in a simple impregnation method followed by a high-temperature annealing step, is compatible with the standard processes in the fabrication of solar cells. The results show down-shifting processes with a maximum photoluminescent intensity at 615 nm, related to the transition 5D0 → 7F2. Different initial concentrations of Eu(NO3)3 are evaluated to study the influence of the rare earth concentration on the photoluminescent intensity. The chemical composition and the morphology of Eu-doped PSLs are examined by means of x-ray dispersion spectroscopy, Fourier-transform infrared spectroscopy and scanning electron microscopy. These Eu-doped layers are considered to be applied as energy converters in silicon-based third generation solar cells.

  18. Formation mechanism of a silicon carbide coating for a reinforced carbon-carbon composite

    NASA Technical Reports Server (NTRS)

    Rogers, D. C.; Shuford, D. M.; Mueller, J. I.

    1975-01-01

    Results are presented for a study to determine the mechanisms involved in a high-temperature pack cementation process which provides a silicon carbide coating on a carbon-carbon composite. The process and materials used are physically and chemically analyzed. Possible reactions are evaluated using the results of these analytical data. The coating is believed to develop in two stages. The first is a liquid controlled phase process in which silicon carbide is formed due to reactions between molten silicon metal and the carbon. The second stage is a vapor transport controlled reaction in which silicon vapors react with the carbon. There is very little volume change associated with the coating process. The original thickness changes by less than 0.7%. This indicates that the coating process is one of reactive penetration. The coating thickness can be increased or decreased by varying the furnace cycle process time and/or temperature to provide a wide range of coating thicknesses.

  19. Synthesis and Microstructure Evolution of Nano-Titania Doped Silicon Coatings

    NASA Astrophysics Data System (ADS)

    Moroz, N. A.; Umapathy, H.; Mohanty, P.

    2010-01-01

    The Anatase phase of Titania (TiO2) in nanocrystalline form is a well known photocatalyst. Photocatalysts are commercially used to accelerate photoreactions and increase photovoltaic efficiency such as in solar cells. This study investigates the in-flight synthesis of Titania and its doping into a Silicon matrix resulting in a catalyst-dispersed coating. A liquid precursor of Titanium Isopropoxide and ethanol was coaxially fed into the plasma gun to form Titania nanoparticles, while Silicon powder was externally injected downstream. Coatings of 75-150 μm thick were deposited onto flat coupons. Further, Silicon powder was alloyed with aluminum to promote crystallization and reduce the amorphous phase in the Silicon matrix. Dense coatings containing nano-Titania particles were observed under electron microscope. X-ray diffraction showed that both the Rutile and Anatase phases of the Titania exist. The influence of process parameters and aluminum alloying on the microstructure evolution of the doped coatings is analyzed and presented.

  20. Lightweight Ceramic Composition of Carbon Silicon Oxygen and Boron

    NASA Technical Reports Server (NTRS)

    Leiser, Daniel B. (Inventor); Hsu, Ming-Ta (Inventor); Chen, Timothy S. (Inventor)

    1997-01-01

    Lightweight, monolithic ceramics resistant to oxidation in air at high temperatures are made by impregnating a porous carbon preform with a sol which contains a mixture of tetraethoxysilane, dimethyldiethoxysilane and trimethyl borate. The sol is gelled and dried on the carbon preform to form a ceramic precursor. The precursor is pyrolyzed in an inert atmosphere to form the ceramic which is made of carbon, silicon, oxygen and boron. The carbon of the preform reacts with the dried gel during the pyrolysis to form a component of the resulting ceramic. The ceramic is of the same size, shape and form as the carbon precursor. Thus, using a porous, fibrous carbon precursor, such as a carbon felt, results in a porous, fibrous ceramic. Ceramics of the invention are useful as lightweight tiles for a reentry spacecraft.

  1. Angular and local spectroscopic analysis to probe the vertical alignment of N-doped well-separated carbon nanotubes.

    PubMed

    Minea, T M; Bouchet-Fabre, B; Lazar, S; Point, S; Zandbergen, H W

    2006-08-17

    Vertically aligned well-separated N-doped multiwalled carbon nanotubes (CNTs) were grown on a silicon substrate by plasma enhanced chemical vapor deposition (PECVD). Angular near-edge X-ray absorption fine structure (NEXAFS) was used to investigate the vertical alignment of as-grown CNTs. In addition, both individual tubes and tube bundles were characterized by high-resolution electron energy loss spectroscopy (HREELS). Simultaneous analysis of both spectroscopic techniques provides information on chemical environment, orbital orientation between carbon and heteroatoms, and local curvature effects. We demonstrate the utility of NEXAFS as an in situ probe of CNTs. PMID:16898707

  2. Effective third-order susceptibility of silicon-nanocrystal-doped silica.

    PubMed

    Rukhlenko, Ivan D; Zhu, Weiren; Premaratne, Malin; Agrawal, Govind P

    2012-11-19

    We derive approximate analytic expressions for the effective susceptibility tensor of a nonlinear composite, consisting of silicon nanocrystals embedded in fused silica. Two types of composites are considered: by assuming that (i) the crystallographic axes of different crystallites are the same, or (ii) crystallites are oriented randomly. In the first case, the tensor properties of the effective third-order susceptibility are shown to coincide with those of the bulk silicon. In the second case, however, the tensor properties of the susceptibility of the composite material are found to be quite different due to drastic modification of light interaction with optical phonons inside the composite. The newly derived expressions should be useful for modeling nonlinear optical phenomena in silica fibers and waveguides doped with silicon nanocrystals.

  3. Stable doping of carbon nanotubes via molecular self assembly

    SciTech Connect

    Lee, B.; Chen, Y.; Podzorov, V.; Cook, A.; Zakhidov, A.

    2014-10-14

    We report a novel method for stable doping of carbon nanotubes (CNT) based on methods of molecular self assembly. A conformal growth of a self-assembled monolayer of fluoroalkyl trichloro-silane (FTS) at CNT surfaces results in a strong increase of the sheet conductivity of CNT electrodes by 60–300%, depending on the CNT chirality and composition. The charge carrier mobility of undoped partially aligned CNT films was independently estimated in a field-effect transistor geometry (~100 cm²V⁻¹s⁻¹). The hole density induced by the FTS monolayer in CNT sheets is estimated to be ~1.8 ×10¹⁴cm⁻². We also show that FTS doping of CNT anodes greatly improves the performance of organic solar cells. This large and stable doping effect, easily achieved in large-area samples, makes this approach very attractive for applications of CNTs in transparent and flexible electronics.

  4. Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-04-02

    A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

  5. Analytical potential for atomistic simulations of silicon, carbon, and silicon carbide

    NASA Astrophysics Data System (ADS)

    Erhart, Paul; Albe, Karsten

    2005-01-01

    We present an analytical bond-order potential for silicon, carbon, and silicon carbide that has been optimized by a systematic fitting scheme. The functional form is adopted from a preceding work [Phys. Rev. B 65, 195124 (2002)] and is built on three independently fitted potentials for SiSi , CC , and SiC interaction. For elemental silicon and carbon, the potential perfectly reproduces elastic properties and agrees very well with first-principles results for high-pressure phases. The formation enthalpies of point defects are reasonably reproduced. In the case of silicon stuctural features of the melt agree nicely with data taken from literature. For silicon carbide the dimer as well as the solid phases B1, B2, and B3 were considered. Again, elastic properties are very well reproduced including internal relaxations under shear. Comparison with first-principles data on point defect formation enthalpies shows fair agreement. The successful validation of the potentials for configurations ranging from the molecular to the bulk regime indicates the transferability of the potential model and makes it a good choice for atomistic simulations that sample a large configuration space.

  6. Heteroatom-doped highly porous carbon from human urine

    PubMed Central

    Chaudhari, Nitin Kaduba; Song, Min Young; Yu, Jong-Sung

    2014-01-01

    Human urine, otherwise potentially polluting waste, is an universal unused resource in organic form disposed by the human body. We present for the first time “proof of concept” of a convenient, perhaps economically beneficial, and innovative template-free route to synthesize highly porous carbon containing heteroatoms such as N, S, Si, and P from human urine waste as a single precursor for carbon and multiple heteroatoms. High porosity is created through removal of inherently-present salt particles in as-prepared “Urine Carbon” (URC), and multiple heteroatoms are naturally doped into the carbon, making it unnecessary to employ troublesome expensive pore-generating templates as well as extra costly heteroatom-containing organic precursors. Additionally, isolation of rock salts is an extra bonus of present work. The technique is simple, but successful, offering naturally doped conductive hierarchical porous URC, which leads to superior electrocatalytic ORR activity comparable to state of the art Pt/C catalyst along with much improved durability and methanol tolerance, demonstrating that the URC can be a promising alternative to costly Pt-based electrocatalyst for ORR. The ORR activity can be addressed in terms of heteroatom doping, surface properties and electrical conductivity of the carbon framework. PMID:24909133

  7. On the assumed impact of germanium doping on void formation in Czochralski-grown silicon

    NASA Astrophysics Data System (ADS)

    Vanhellemont, Jan; Zhang, Xinpeng; Xu, Wubing; Chen, Jiahe; Ma, Xiangyang; Yang, Deren

    2010-12-01

    The assumed impact of Ge doping on void formation during Czochralski-growth of silicon single crystals, is studied using scanning infrared microscopy. It has been reported that Ge doping leads to a reduction in the flow pattern defect density and of the crystal originated particle size, both suggesting an effect of Ge on vacancy concentration and void formation during crystal growth. The present study however reveals only a marginal-if any-effect of Ge doping on grown-in single void size and density. Double and multiple void formation might however be suppressed partially by Ge doping leading to the observed decrease in flow pattern defect density. The limited effect of Ge doping on single void formation is in agreement with earlier findings that Ge atoms are only a weak trap for vacancies at higher temperatures and therefor should have a smaller impact on the vacancy thermal equilibrium concentration and on single void nucleation than, e.g., interstitial oxygen and nitrogen.

  8. Lithium Ion Battery Performance of Silicon Nanowires With Carbon Skin

    SciTech Connect

    Bogart, Timothy D.; Oka, Daichi; Lu, Xiaotang; Gu, Meng; Wang, Chong M.; Korgel, Brian A.

    2013-12-06

    Silicon (Si) nanomaterials have emerged as a leading candidate for next generation lithium-ion battery anodes. However, the low electrical conductivity of Si requires the use of conductive additives in the anode film. Here we report a solution-based synthesis of Si nanowires with a conductive carbon skin. Without any conductive additive, the Si nanowire electrodes exhibited capacities of over 2000 mA h g-1 for 100 cycles when cycled at C/10 and over 1200 mA h g-1 when cycled more rapidly at 1C against Li metal.. In situ transmission electron microscopy (TEM) observation reveals that the carbon skin performs dual roles: it speeds lithiation of the Si nanowires significantly, while also constraining the final volume expansion. The present work sheds light on ways to optimize lithium battery performance by smartly tailoring the nanostructure of composition of materials based on silicon and carbon.

  9. Pressure-induced phase transformations during femtosecond-laser doping of silicon

    NASA Astrophysics Data System (ADS)

    Smith, Matthew J.; Lin, Yu-Ting; Sher, Meng-Ju; Winkler, Mark T.; Mazur, Eric; Gradečak, Silvija

    2011-09-01

    Silicon hyperdoped with chalcogens via femtosecond-laser irradiation exhibits unique near-unity sub-bandgap absorptance extending into the infrared region. The intense light-matter interactions that occur during femtosecond-laser doping produce pressure waves sufficient to induce phase transformations in silicon, resulting in the formation of metastable polymorphic phases, but their exact formation mechanism and influence on the doping process are still unknown. We report direct observations of these phases, describe their formation and distribution, and consider their potential impact on sub-bandgap absorptance. Specifically, the transformation from diamond cubic Si-I to pressure-induced polymorphic crystal structures (amorphous Si, Si-XII, and Si-III) during femtosecond-laser irradiation was investigated using scanning electron microscopy, Raman spectroscopy, and transmission electron microscopy. Amorphous Si, Si-XII, and Si-III were found to form in femtosecond-laser doped silicon regardless of the presence of a gaseous or thin-film dopant precursor. The rate of pressure loading and unloading induced by femtosecond-laser irradiation kinetically limits the formation of pressure-induced phases, producing regions of amorphous Si 20 to 200 nm in size and nanocrystals of Si-XII and Si-III. The surface texturing that occurs during femtosecond-laser irradiation produces inhomogeneous pressure distributions across the surface and causes delayed development of high-pressure silicon polymorphs over many laser pulses. Finally, we find that the polymorph phases disappear during annealing more rapidly than the sub-bandgap absorptance decreases, enabling us to decouple these two processes through post-treatment annealing.

  10. Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm

    SciTech Connect

    Ramírez, J. M. Berencén, Y.; Garrido, B.; Cueff, S.; Labbé, C.

    2014-08-28

    Erbium-doped silicon-rich nitride electroluminescent thin-films emitting at 1.54 μm have been fabricated and integrated within a metal-oxide-semiconductor structure. By gradually varying the stoichiometry of the silicon nitride, we uncover the role of silicon excess on the optoelectronic properties of devices. While the electrical transport is mainly enabled in all cases by Poole-Frenkel conduction, power efficiency and conductivity are strongly altered by the silicon excess content. Specifically, the increase in silicon excess remarkably enhances the conductivity and decreases the charge trapping; however, it also reduces the power efficiency. The main excitation mechanism of Er{sup 3+} ions embedded in silicon-rich nitrides is discussed. The optimum Si excess that balances power efficiency, conductivity, and charge trapping density is found to be close to 16%.

  11. Diameter Controlled of Carbon Nanotubes Synthesized on Nanoporous Silicon Support

    NASA Astrophysics Data System (ADS)

    Asli, N. A.; Shamsudin, M. S.; Maryam, M.; Yusop, S. F. M.; Suriani, A. B.; Rusop, M.; Abdullah, S.

    2013-06-01

    Carbon nanotubes (CNTs) have been successfully synthesized on nanoporous silicon template (NPSiT) using botanical source, camphor oil. Diameter of CNTs synthesized was controlled by pore size of NPSiT prepared by photo-electrochemical anodization method. The diameter of CNTs grown on different NPSiT corresponded to the pore diameter of NPSiT. FESEM images showed self-organized bundles of fiber-like structures of CNTs with diameter of around 20nm which were successfully grown directly on nanoporous silicon while raman spectra obtained ratio of ID/IG at 0.67.

  12. Multiparticle Exciton Ionization in Shallow Doped Carbon Nanotubes.

    PubMed

    Sau, Jay D; Crochet, Jared J; Doorn, Stephen K; Cohen, Marvin L

    2013-03-21

    Shallow hole doping in small-diameter semiconducting carbon nanotubes with a valley degeneracy is predicted to result in the resonant ionization of excitons into free electron-hole pairs. This mechanism, which relies on the chirality of the electronic states, causes excitons to decay with high efficiencies where the rate scales as the square of the dopant density. Moreover, multiparticle exciton ionization can account for delocalized fluorescence quenching when a few holes per micrometer of tube length are present.

  13. Effect of W and WC on the oxidation resistance of yttria-doped silicon nitride

    NASA Technical Reports Server (NTRS)

    Schuon, S.

    1980-01-01

    The effect of tungsten and tungsten carbide contamination on the oxidation and cracking in air of yttria-doped silicon nitride ceramics is investigated. Silicon nitride powder containing 8 wt % Y2O3 was doped with 2 wt % W, 4 wt % W, 2 wt % WC or left undoped, and sintered in order to simulate contamination during milling, and specimens were exposed in air to 500, 750 and 1350 C for various lengths of time. Scanning electron and optical microscopy and X-ray diffraction of the specimens in the as-sintered state reveals that the addition of W or WC does not affect the phase relationships in the system, composed of alpha and beta Si3N4, melilite and an amorphous phase. Catastrophic oxidation is observed at 750 C in specimens containing 2 and 4 wt % W, accompanied by the disappearance of alpha Si3N4 and melilite from the structure. At 1350 C, the formation of a protective glassy oxide layer was observed on all specimens without catastrophic oxidation, and it is found that pre-oxidation at 1350 C also improved the oxidation resistance at 750 C of bars doped with 4 wt % W. It is suggested that tungsten contamination from WC grinding balls may be the major cause of the intermediate-temperature cracking and instability frequently observed in Si3N4-8Y2O3.

  14. Yield stress of perchloric-acid-doped polythiophene/silicone oil suspensions

    NASA Astrophysics Data System (ADS)

    Chotpattananont, Datchanee; Sirivat, Anuvat; Jamieson, Alexander M.

    2004-07-01

    Electrorheological properties in steady shear of perchloric acid doped poly(3-thiophene acetic acid), PTAA, particles in silicone oil were investigated to determine the effects of field strength, particle concentration, doping degree (conductivity values), operating temperature, and nonionic surfactant. The PTAA/silicone oil suspensions show the typical ER response of Bingham flow behavior upon the application of electric field. The yield stress increases with electric field strength, E, and particle volume fraction, f, according to a scaling law of the form, τy~ΕαΦγ. The scaling exponent a approaches the value of 2, predicted by the polarization model, as the particle volume fraction decreases and when the doping level of the particles decreases. The scaling exponent g tends to unity, as predicted by the polarization model, when the electric field strength is low. The yield stress under electric field initially increases with temperature up to 25 °C, and then levels off. At electric fields above of 1.5 kV/mm, the yield stress increases significantly by up to 50% on addition of small amounts of a nonionic surfactant.

  15. Development of Iron Doped Silicon Nanoparticles as Bimodal Imaging Agents

    PubMed Central

    Singh, Mani P.; Atkins, Tonya M.; Muthuswamy, Elayaraja; Kamali, Saeed; Tu, Chuqiao; Louie, Angelique Y.; Kauzlarich, Susan M.

    2012-01-01

    We demonstrate the synthesis of water-soluble allylamine terminated Fe doped Si (SixFe) nanoparticles as bimodal agents for optical and magnetic imaging. The preparation involves the synthesis of a single source iron containing precursor, Na4Si4 with x% Fe (x = 1, 5, 10), and its subsequent reaction with NH4Br to produce hydrogen terminated SixFe nanoparticles. The hydrogen-capped nanoparticles are further terminated with allylamine via thermal hydrosilylation. Transmission electron microscopy (TEM) indicates that the average particle diameter is ~3.0±1.0 nm. The Si5Fe nanoparticles show strong photoluminescence quantum yield in water (~ 10 %) with significant T2 contrast (r2/r1value of 4.31). Electron paramagnetic resonance (EPR) and Mössbauer spectroscopies indicate that iron in the nanoparticles is in the +3 oxidation state. Analysis of cytotoxicity using the resazurin assay on HepG2 liver cells indicates that the particles have minimal toxicity. PMID:22616623

  16. Silicon shallow doping by erbium and oxygen recoils implantation

    NASA Astrophysics Data System (ADS)

    Feklistov, K. V.; Cherkov, A. G.; Popov, V. P.

    2016-09-01

    In order to get shallow high doping of Si with optically active complexes ErOn, Er followed by O recoils implantation was realized by means of subsequent Ar+ 250-290 keV implantation with doses 2×1015-1×1016 cm-2 through 50-nm deposited films of Er and then SiO2, accordingly. High Er concentration up to 5×1020 cm-3 to the depth of 10 nm was obtained after implantation. However, about a half of the Er implanted atoms become part of surface SiO2 during post-implantation annealing at 950 °C for 1 h in the N2 ambient under a SiO2 cap. The mechanism of Er segregation into the cap oxide following the moving amorphous-crystalline interface during recrystallization was rejected by the transmission electron microscopy (TEM) analysis. Instead, the other mechanism of immobile Er atoms and redistribution of recoil-implanted O atoms toward cap oxide was proposed. It explains the observed formation of two Er containing phases: Er-Si-O phase with a high O content adjacent to the cap oxide and deeper O depleted Er-Si phase. The correction of heat treatments is proposed in order to avoid the above-mentioned problems.

  17. Self- and dopant diffusion in extrinsic boron doped isotopically controlled silicon multilayer structures

    SciTech Connect

    Sharp, Ian D.; Bracht, Hartmut A.; Silvestri, Hughes H.; Nicols, Samuel P.; Beeman, Jeffrey W.; Hansen, John L.; Nylandsted Larsen, Arne; Haller, Eugene E.

    2002-04-01

    Isotopically controlled silicon multilayer structures were used to measure the enhancement of self- and dopant diffusion in extrinsic boron doped silicon. {sup 30}Si was used as a tracer through a multilayer structure of alternating natural Si and enriched {sup 28}Si layers. Low energy, high resolution secondary ion mass spectrometry (SIMS) allowed for simultaneous measurement of self- and dopant diffusion profiles of samples annealed at temperatures between 850 C and 1100 C. A specially designed ion- implanted amorphous Si surface layer was used as a dopant source to suppress excess defects in the multilayer structure, thereby eliminating transient enhanced diffusion (TED) behavior. Self- and dopant diffusion coefficients, diffusion mechanisms, and native defect charge states were determined from computer-aided modeling, based on differential equations describing the diffusion processes. We present a quantitative description of B diffusion enhanced self-diffusion in silicon and conclude that the diffusion of both B and Si is mainly mediated by neutral and singly positively charged self-interstitials under p-type doping. No significant contribution of vacancies to either B or Si diffusion is observed.

  18. Structural, Stabilities, and Electronic Properties of Bimetallic Mg2-doped Silicon Clusters

    NASA Astrophysics Data System (ADS)

    Zhang, Shuai; Wang, Zhi-Peng; Lu, Cheng; Wang, Chong; Li, Gen-Quan

    2014-09-01

    The equilibrium geometries, relative stabilities, growth patterns, and electronic properties of magnesium-doped silicon clusters Mg2Sin (n = 1 - 11) have been systematically investigated at the B3LYP/6-311G (d) level. A large number of initial configurations are optimized and the lowestenergy stable geometries of Mg2Sin (n = 1 - 11) clusters with different spin multiplicities are determined. The results indicate that the most stable configurations for Mg2Sin clusters favor the threedimensional structures at n = 3 - 11. The analyses of the averaged binding energies, fragmentation energies, second-order energy difference, and HOMO-LUMO gaps suggest that the Mg2Si4 and Mg2Si6 clusters have the stronger relative stability, and magnesium atoms doping enhances the chemical activity of the silicon framework. The natural population and natural electronic configuration analyses show that the charge transfer occurs from the 3s orbital of the magnesium atoms to the silicon atoms and 3p orbital of the magnesium atoms

  19. Amorphization of silicon carbide by carbon displacement

    NASA Astrophysics Data System (ADS)

    Devanathan, R.; Gao, F.; Weber, W. J.

    2004-05-01

    We have used molecular dynamics simulations to examine the possibility of amorphizing silicon carbide (SiC) by exclusively displacing C atoms. At a defect generation corresponding to 0.2 displacements per atom, the enthalpy surpasses the level of melt-quenched SiC, the density decreases by about 15%, and the radial distribution function shows a lack of long-range order. Prior to amorphization, the surviving defects are mainly C Frenkel pairs (67%), but Si Frenkel pairs (18%) and antisite defects (15%) are also present. The results indicate that SiC can be amorphized by C sublattice displacements. Chemical short-range disorder, arising mainly from Frenkel pair production, plays a significant role in the amorphization.

  20. Characterization of phosphorus-doped multiwalled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Larrude, D. G.; Maia da Costa, M. E. H.; Monteiro, F. H.; Pinto, A. L.; Freire, F. L.

    2012-03-01

    Phosphorus-doped multiwalled carbon nanotubes (P-MWNTs) have been successfully synthesized by spray pyrolysis methods using a solution of ferrocene and triphenylphosphine in toluene. Electron microscopy images reveal corrugated tubes with a special morphology, similar to a carbon necklace. P-MWNTs are shorter compared to undoped tubes grown in the same conditions using ferrocene and toluene as precursors. Raman spectroscopy characterization suggests the formation of more defective tubes as the phosphorus in the precursor solution was increased. X-ray photoelectron spectroscopy (XPS) revealing the chemical environment of the phosphorus atoms clearly indicates the presence of substitutional phosphorus in the nanotubes.

  1. Ag doped silicon nitride nanocomposites for embedded plasmonics

    NASA Astrophysics Data System (ADS)

    Bayle, M.; Bonafos, C.; Benzo, P.; Benassayag, G.; Pécassou, B.; Khomenkova, L.; Gourbilleau, F.; Carles, R.

    2015-09-01

    The localized surface plasmon-polariton resonance (LSPR) of noble metal nanoparticles (NPs) is widely exploited for enhanced optical spectroscopies of molecules, nonlinear optics, photothermal therapy, photovoltaics, or more recently in plasmoelectronics and photocatalysis. The LSPR frequency depends not only of the noble metal NP material, shape, and size but also of its environment, i.e., of the embedding matrix. In this paper, Ag-NPs have been fabricated by low energy ion beam synthesis in silicon nitride (SiNx) matrices. By coupling the high refractive index of SiNx to the relevant choice of dielectric thickness in a SiNx/Si bilayer for an optimum antireflective effect, a very sharp plasmonic optical interference is obtained in mid-range of the visible spectrum (2.6 eV). The diffusion barrier property of the host SiNx matrix allows for the introduction of a high amount of Ag and the formation of a high density of Ag-NPs that nucleate during the implantation process. Under specific implantation conditions, in-plane self-organization effects are obtained in this matrix that could be the result of a metastable coarsening regime.

  2. Ag doped silicon nitride nanocomposites for embedded plasmonics

    SciTech Connect

    Bayle, M.; Bonafos, C. Benzo, P.; Benassayag, G.; Pécassou, B.; Carles, R.; Khomenkova, L.; Gourbilleau, F.

    2015-09-07

    The localized surface plasmon-polariton resonance (LSPR) of noble metal nanoparticles (NPs) is widely exploited for enhanced optical spectroscopies of molecules, nonlinear optics, photothermal therapy, photovoltaics, or more recently in plasmoelectronics and photocatalysis. The LSPR frequency depends not only of the noble metal NP material, shape, and size but also of its environment, i.e., of the embedding matrix. In this paper, Ag-NPs have been fabricated by low energy ion beam synthesis in silicon nitride (SiN{sub x}) matrices. By coupling the high refractive index of SiN{sub x} to the relevant choice of dielectric thickness in a SiN{sub x}/Si bilayer for an optimum antireflective effect, a very sharp plasmonic optical interference is obtained in mid-range of the visible spectrum (2.6 eV). The diffusion barrier property of the host SiN{sub x} matrix allows for the introduction of a high amount of Ag and the formation of a high density of Ag-NPs that nucleate during the implantation process. Under specific implantation conditions, in-plane self-organization effects are obtained in this matrix that could be the result of a metastable coarsening regime.

  3. Electron spin resonance in amorphous silicon doped with Gd

    NASA Astrophysics Data System (ADS)

    Castilho, J. H.; Barberis, G. E.; Rettori, C.; Marques, F. C.; Chambouleyron, I.; Alvarez, F.

    1989-04-01

    ESR experiments on Gd impurities in amorphous silicon between liquid-He and room temperatures show three resonances which could be ascribed to paramagnetic dangling bonds (g=2.0055+/-0.0005), to Gd 8S7/2 states (g=1.997+/-0.005), and to a new paramagnetic center (g=2.10+/-0.05) associated with the presence of Gd atoms. For low-Gd-concentration samples the intensity of the resonance due to dangling bonds decreases as the Gd concentration increases and the intensity of the new paramagnetic center is found to increase with increasing temperature. These results indicate, as we recently found for other rare-earth-element impurities in a-Si, that a fraction of the Gd atoms act as acceptor impurities with associated loosely bound holes in the a-Si valence-band tail which are responsible for the resonance of the new paramagnetic center observed at a g value of 2.10+/-0.05.

  4. Carbon p electron ferromagnetism in silicon carbide

    SciTech Connect

    Wang, Yutian; Liu, Yu; Wang, Gang; Anwand, Wolfgang; Jenkins, Catherine A.; Arenholz, Elke; Munnik, Frans; Gordan, Ovidiu D.; Salvan, Georgeta; Zahn, Dietrich R. T.; Chen, Xiaolong; Gemming, Sibylle; Helm, Manfred; Zhou, Shengqiang

    2015-03-11

    Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupling can be attributed to the p electrons of the nearest-neighbor carbon atoms around the VSiVC divacancies. Thus, the ferromagnetism is traced down to its microscopic electronic origin.

  5. Carbon p electron ferromagnetism in silicon carbide

    DOE PAGESBeta

    Wang, Yutian; Liu, Yu; Wang, Gang; Anwand, Wolfgang; Jenkins, Catherine A.; Arenholz, Elke; Munnik, Frans; Gordan, Ovidiu D.; Salvan, Georgeta; Zahn, Dietrich R. T.; et al

    2015-03-11

    Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupling can be attributed to the p electrons of the nearest-neighbor carbon atoms around the VSiVC divacancies. Thus, the ferromagnetism is traced down to its microscopic electronic origin.

  6. Nitrogen-Doped Carbon Dots for "green" Quantum Dot Solar Cells.

    PubMed

    Wang, Hao; Sun, Pengfei; Cong, Shan; Wu, Jiang; Gao, Lijun; Wang, Yun; Dai, Xiao; Yi, Qinghua; Zou, Guifu

    2016-12-01

    Considering the environment protection, "green" materials are increasingly explored for photovoltaics. Here, we developed a kind of quantum dots solar cell based on nitrogen-doped carbon dots. The nitrogen-doped carbon dots were prepared by direct pyrolysis of citric acid and ammonia. The nitrogen-doped carbon dots' excitonic absorption depends on the N-doping content in the carbon dots. The N-doping can be readily modified by the mass ratio of reactants. The constructed "green" nitrogen-doped carbon dots solar cell achieves the best power conversion efficiency of 0.79 % under AM 1.5 G one full sun illumination, which is the highest efficiency for carbon dot-based solar cells.

  7. Monte Carlo Study on Carbon-Gradient-Doped Silica Aerogel Insulation.

    PubMed

    Zhao, Y; Tang, G H

    2015-04-01

    Silica aerogel is almost transparent for wavelengths below 8 µm where significant energy is transferred by thermal radiation. The radiative heat transfer can be restricted at high temperature if doped with carbon powder in silica aerogel. However, different particle sizes of carbon powder doping have different spectral extinction coefficients and the doped carbon powder will increase the solid conduction of silica aerogel. This paper presents a theoretical method for determining the optimal carbon doping in silica aerogel to minimize the energy transfer. Firstly we determine the optimal particle size by combining the spectral extinction coefficient with blackbody radiation and then evaluate the optimal doping amount between heat conduction and radiation. Secondly we develop the Monte Carlo numerical method to study radiative properties of carbon-gradient-doped silica aerogel to decrease the radiative heat transfer further. The results indicate that the carbon powder is able to block infrared radiation and thus improve the thermal insulating performance of silica aerogel effectively.

  8. Ablation of carbon-doped liquid propellant in laser plasma propulsion

    NASA Astrophysics Data System (ADS)

    Zheng, Z. Y.; Liang, T.; Zhang, S. Q.; Gao, L.; Gao, H.; Zhang, Z. L.

    2016-04-01

    Carbon-doped liquid glycerol ablated by nanosecond pulse laser is investigated in laser plasma propulsion. It is found that the propulsion is much more correlated with the carbon content. The doped carbon can change the laser intensity and laser focal position so as to reduce the splashing quantity of the glycerol. Less consumption of the liquid volume results in a high specific impulse.

  9. Fluorine doping into diamond-like carbon coatings inhibits protein adsorption and platelet activation.

    PubMed

    Hasebe, Terumitsu; Yohena, Satoshi; Kamijo, Aki; Okazaki, Yuko; Hotta, Atsushi; Takahashi, Koki; Suzuki, Tetsuya

    2007-12-15

    The first major event when a medical device comes in contact with blood is the adsorption of plasma proteins. Protein adsorption on the material surface leads to the activation of the blood coagulation cascade and the inflammatory process, which impair the lifetime of the material. Various efforts have been made to minimize protein adsorption and platelet adhesion. Recently, diamond-like carbon (DLC) has received much attention because of their antithrombogenicity. We recently reported that coating silicon substrates with fluorine-doped diamond-like carbon (F-DLC) drastically suppresses platelet adhesion and activation. Here, we evaluated the protein adsorption on the material surfaces and clarified the relationship between protein adsorption and platelet behaviors, using polycarbonate and DLC- or F-DLC-coated polycarbonate. The adsorption of albumin and fibrinogen were assessed using a colorimetric protein assay, and platelet adhesion and activation were examined using a differential interference contrast microscope. A higher ratio of albumin to fibrinogen adsorption was observed on F-DLC than on DLC and polycarbonate films, indicating that the F-DLC film should prevent thrombus formation. Platelet adhesion and activation on the F-DLC films were more strongly suppressed as the amount of fluorine doping was increased. These results show that the F-DLC coating may be useful for blood-contacting devices.

  10. Fundamental limitations imposed by high doping on the performance of pn junction silicon solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.; Li, S. S.; Sah, C. T.

    1975-01-01

    Fundamental limitations imposed on the performance of silicon junction solar cells by physical mechanisms accompanying high doping are described. The one-dimensional mechanisms divide into two broad categories: those associated with band-gap shrinkage and those associated with interband transition rates. By extending the traditional method of analysis and comparing with measurement, it is shown that the latter kind of mechanism dominates in determining the open-circuit voltage in a one-dimensional model of a 0.1 ohm-cm cell at 300 K. As an alternative dominant mechanism, a three-dimensional model involving thermodynamically stable clusters of impurities in the highly-doped diffused layer is suggested.

  11. EPR investigations of silicon carbide nanoparticles functionalized by acid doped polyaniline

    NASA Astrophysics Data System (ADS)

    Karray, Fekri; Kassiba, Abdelhadi

    2012-06-01

    Nanocomposites (SiC-PANI) based on silicon carbide nanoparticles (SiC) encapsulated in conducting polyaniline (PANI) are synthesized by direct polymerization of PANI on the nanoparticle surfaces. The conductivity of PANI and the nanocomposites was modulated by several doping levels of camphor sulfonic acid (CSA). Electron paramagnetic resonance (EPR) investigations were carried out on representative SiC-PANI samples over the temperature range [100-300 K]. The features of the EPR spectra were analyzed taking into account the paramagnetic species such as polarons with spin S=1/2 involved in two main environments realized in the composites as well as their thermal activation. A critical temperature range 200-225 K was revealed through crossover changes in the thermal behavior of the EPR spectral parameters. Insights on the electronic transport properties and their thermal evolutions were inferred from polarons species probed by EPR and the electrical conductivity in doped nanocomposites.

  12. Near-field radiative transfer based thermal rectification using doped silicon

    NASA Astrophysics Data System (ADS)

    Basu, Soumyadipta; Francoeur, Mathieu

    2011-03-01

    In this letter, we have designed a near-field thermal rectifier using a film and a bulk of doped silicon, with different doping levels, separated by a vacuum gap. We examine the origin of nonlinearities in thermal rectification associated with near-field heat transfer, and investigate closely the effects of varying the vacuum gap and the film thickness on rectification. For a 10 nm thick film, rectification greater than 0.5 is achieved for vacuum gaps varying from 1 nm to 50 nm with the hot and cold temperatures of the terminals of the rectifier being 400 K and 300 K, respectively. The results obtained from this study may benefit future research in thermal management and energy harvesting.

  13. Silicon-Doped Titanium Dioxide Nanotubes Promoted Bone Formation on Titanium Implants

    PubMed Central

    Zhao, Xijiang; Wang, Tao; Qian, Shi; Liu, Xuanyong; Sun, Junying; Li, Bin

    2016-01-01

    While titanium (Ti) implants have been extensively used in orthopaedic and dental applications, the intrinsic bioinertness of untreated Ti surface usually results in insufficient osseointegration irrespective of the excellent biocompatibility and mechanical properties of it. In this study, we prepared surface modified Ti substrates in which silicon (Si) was doped into the titanium dioxide (TiO2) nanotubes on Ti surface using plasma immersion ion implantation (PIII) technology. Compared to TiO2 nanotubes and Ti alone, Si-doped TiO2 nanotubes significantly enhanced the expression of genes related to osteogenic differentiation, including Col-I, ALP, Runx2, OCN, and OPN, in mouse pre-osteoblastic MC3T3-E1 cells and deposition of mineral matrix. In vivo, the pull-out mechanical tests after two weeks of implantation in rat femur showed that Si-doped TiO2 nanotubes improved implant fixation strength by 18% and 54% compared to TiO2-NT and Ti implants, respectively. Together, findings from this study indicate that Si-doped TiO2 nanotubes promoted the osteogenic differentiation of osteoblastic cells and improved bone-Ti integration. Therefore, they may have considerable potential for the bioactive surface modification of Ti implants. PMID:26927080

  14. Low-level boron doping and light-induced effects in amorphous silicon pin solar cells

    NASA Astrophysics Data System (ADS)

    Moeller, M.; Rauscher, B.; Kruehler, W.; Plaettner, R.; Pfleiderer, H.

    Amorphous silicon solar cells with the structure pin/ITO produced in the laboratory show an AM1 efficiency of up to 7.4 percent on 6 sq mm. The impact of doping the i-layer slightly with boron on the cell performance was studied together with its possible influence on the cell stability. Cells exposed to continuous AM1 illumination (up to 2000 hours) show a degradation of the efficiency. Differences in the bias-voltage during the deposition lead to significant differences in the stability whereas the influence of boron doping was not so prominent. The nu-tau-products for electrons and holes were shown to degrade differently through light-soaking for different doping-level. A further investigation was made by evaluating the frequency dependence of the capacitance via a new p i n junction model to obtain the density of states and the drift field in the i-layer for doping and light-soaking.

  15. Silicon-Doped Titanium Dioxide Nanotubes Promoted Bone Formation on Titanium Implants.

    PubMed

    Zhao, Xijiang; Wang, Tao; Qian, Shi; Liu, Xuanyong; Sun, Junying; Li, Bin

    2016-02-26

    While titanium (Ti) implants have been extensively used in orthopaedic and dental applications, the intrinsic bioinertness of untreated Ti surface usually results in insufficient osseointegration irrespective of the excellent biocompatibility and mechanical properties of it. In this study, we prepared surface modified Ti substrates in which silicon (Si) was doped into the titanium dioxide (TiO₂) nanotubes on Ti surface using plasma immersion ion implantation (PIII) technology. Compared to TiO₂ nanotubes and Ti alone, Si-doped TiO₂ nanotubes significantly enhanced the expression of genes related to osteogenic differentiation, including Col-I, ALP, Runx2, OCN, and OPN, in mouse pre-osteoblastic MC3T3-E1 cells and deposition of mineral matrix. In vivo, the pull-out mechanical tests after two weeks of implantation in rat femur showed that Si-doped TiO₂ nanotubes improved implant fixation strength by 18% and 54% compared to TiO₂-NT and Ti implants, respectively. Together, findings from this study indicate that Si-doped TiO₂ nanotubes promoted the osteogenic differentiation of osteoblastic cells and improved bone-Ti integration. Therefore, they may have considerable potential for the bioactive surface modification of Ti implants.

  16. Boron/Carbon/Silicon/Nitrogen Ceramics And Precursors

    NASA Technical Reports Server (NTRS)

    Riccitiello, Salvatore; Hsu, Ming TA; Chen, Timothy S.

    1996-01-01

    Ceramics containing various amounts of boron, carbon, silicon, and nitrogen made from variety of polymeric precursors. Synthesized in high yield from readily available and relatively inexpensive starting materials. Stable at room temperature; when polymerized, converted to ceramics in high yield. Ceramics resist oxidation and other forms of degradation at high temperatures; used in bulk to form objects or to infiltrate other ceramics to obtain composites having greater resistance to oxidation and high temperatures.

  17. Stimulated Terahertz Stokes Emission of Silicon Crystals Doped with Antimony Donors

    SciTech Connect

    Pavlov, S.G.; Huebers, H.-W.; Hovenier, J.N.; Klaassen, T.O.; Carder, D.A.; Phillips, P.J.; Redlich, B.; Riemann, H.; Zhukavin, R.Kh.; Shastin, V.N.

    2006-01-27

    Stimulated Stokes emission has been observed from silicon crystals doped by antimony donors when optically excited by radiation from a tunable infrared free electron laser. The photon energy of the emission is equal to the pump photon energy reduced by the energy of the intervalley transverse acoustic (TA) g phonon in silicon ({approx_equal}2.92 THz). The emission frequency covers the range of 4.6-5.8 THz. The laser process occurs due to a resonant coupling of the 1s(E) and 1s(A{sub 1}) donor states (separation {approx_equal}2.97 THz) via the g-TA phonon, which conserves momentum and energy within a single impurity center.

  18. Insight into the mechanisms of chemical doping of graphene on silicon carbide.

    PubMed

    Giannazzo, Filippo

    2016-02-19

    Graphene (Gr) is currently the object of intense research investigations, owing to its rich physics and wide potential for applications. In particular, epitaxial Gr on silicon carbide (SiC) holds great promise for the development of new device concepts based on the vertical current transport at Gr/SiC heterointerface. Precise tailoring of Gr workfunction (WF) represents a key requirement for these device structures. In this context, Günes et al (2015 Nanotechnology 26 445702) recently reported a straightforward approach for WF modulation in epitaxial Gr on silicon carbide by using nitric acid solutions at different dilutions. This paper provides a deep insight on the peculiar mechanisms of chemical doping of epitaxial Gr on 4H-SiC(0001), using several characterization techniques (Raman, UPS, AFM) and density functional theory calculations. The relevance of these findings and their perspective applications in emerging device concepts based on monolithic integration of Gr and SiC will be discussed.

  19. Insight into the mechanisms of chemical doping of graphene on silicon carbide.

    PubMed

    Giannazzo, Filippo

    2016-02-19

    Graphene (Gr) is currently the object of intense research investigations, owing to its rich physics and wide potential for applications. In particular, epitaxial Gr on silicon carbide (SiC) holds great promise for the development of new device concepts based on the vertical current transport at Gr/SiC heterointerface. Precise tailoring of Gr workfunction (WF) represents a key requirement for these device structures. In this context, Günes et al (2015 Nanotechnology 26 445702) recently reported a straightforward approach for WF modulation in epitaxial Gr on silicon carbide by using nitric acid solutions at different dilutions. This paper provides a deep insight on the peculiar mechanisms of chemical doping of epitaxial Gr on 4H-SiC(0001), using several characterization techniques (Raman, UPS, AFM) and density functional theory calculations. The relevance of these findings and their perspective applications in emerging device concepts based on monolithic integration of Gr and SiC will be discussed. PMID:26782771

  20. Manufacture of silicon-based devices having disordered sulfur-doped surface layers

    DOEpatents

    Carey, III, James Edward; Mazur, Eric

    2008-04-08

    The present invention provides methods of fabricating a radiation-absorbing semiconductor wafer by irradiating at least one surface location of a silicon substrate, e.g., an n-doped crystalline silicon, by a plurality of temporally short laser pulses, e.g., femtosecond pulses, while exposing that location to a substance, e.g., SF.sub.6, having an electron-donating constituent so as to generate a substantially disordered surface layer (i.e., a microstructured layer) that incorporates a concentration of that electron-donating constituent, e.g., sulfur. The substrate is also annealed at an elevated temperature and for a duration selected to enhance the charge carrier density in the surface layer. For example, the substrate can be annealed at a temperature in a range of about 700 K to about 900 K.

  1. Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters

    SciTech Connect

    Cuevas, A.; Giroult-Matlakowski, G.; DuBols, C.; Basore, P.A.; King, R.R.

    1995-01-01

    An analytical procedure to extract the surface recombination velocity of the SiO{sub 2}/n type silicon interface, S{sub p}, from PCD measurements of emitter recombination currents is described. The analysis shows that the extracted values of S{sub p} are significantly affected by the assumed material parameters for highly doped silicon, t{sub p}, {mu}{sub p} and {Delta}E{sub g}{sup app}. Updated values for these parameters are used to obtain the dependence of S{sub p} on the phosphorus concentration, N{sub D}, using both previous and new experimental data. The new evidence supports the finding that S{sub p} increases strongly with N{sub D}.

  2. Ab initio calculations of the electronic structure of silicon nanocrystals doped with shallow donors (Li, P)

    SciTech Connect

    Kurova, N. V. Burdov, V. A.

    2013-12-15

    The results of ab initio calculations of the electronic structure of Si nanocrystals doped with shallow donors (Li, P) are reported. It is shown that phosphorus introduces much more significant distortions into the electronic structure of the nanocrystal than lithium, which is due to the stronger central cell potential of the phosphorus ion. It is found that the Li-induced splitting of the ground state in the conduction band of the nanocrystal into the singlet, doublet, and triplet retains its inverse structure typical for bulk silicon.

  3. Comparison of beryllium oxide and pyrolytic graphite crucibles for boron doped silicon epitaxy

    SciTech Connect

    Ali, Dyan; Richardson, Christopher J. K.

    2012-11-15

    This article reports on the comparison of beryllium oxide and pyrolytic graphite as crucible liners in a high-temperature effusion cell used for boron doping in silicon grown by molecular beam epitaxy. Secondary ion mass spectroscopy analysis indicates decomposition of the beryllium oxide liner, leading to significant incorporation of beryllium and oxygen in the grown films. The resulting films are of poor crystal quality with rough surfaces and broad x-ray diffraction peaks. Alternatively, the use of pyrolytic graphite crucible liners results in higher quality films.

  4. Magnetic vortex flux pinning in silicon-oil-doped MgB2

    NASA Astrophysics Data System (ADS)

    Lee, Sung-Ik; Ghorbani, S. R.

    2010-12-01

    The field dependence of the critical current density, jc (B), of MgB2 doped with 10 wt.% of a liquid precursor, silicon oil, was measured. The obtained jc (B) was enhanced compared with the value of pure MgB2. The temperature dependence of the crossover field, Bsb(T), from the region of a single vortex to the region of small vortex bundle pinning shows that δl pinning, which is associated with mean-free-path fluctuations of the charge carriers, is dominant in this superconductor.

  5. Observation of transparency of Erbium-doped silicon nitride in photonic crystal nanobeam cavities.

    PubMed

    Gong, Yiyang; Makarova, Maria; Yerci, Selcuk; Li, Rui; Stevens, Martin J; Baek, Burm; Nam, Sae Woo; Dal Negro, Luca; Vuckovic, Jelena

    2010-06-21

    One dimensional nanobeam photonic crystal cavities are fabricated in an Er-doped amorphous silicon nitride layer. Photoluminescence from the cavities around 1.54 microm is studied at cryogenic and room temperatures at different optical pump powers. The resonators demonstrate Purcell enhanced absorption and emission rates, also confirmed by time resolved measurements. Resonances exhibit linewidth narrowing with pump power, signifying absorption bleaching and the onset of stimulated emission in the material at both 5.5 K and room temperature. We estimate from the cavity linewidths that Er has been pumped to transparency at the cavity resonance wavelength.

  6. Oxygen aggregation kinetics, thermal donors and carbon-oxygen defect formation in silicon containing carbon and tin

    SciTech Connect

    Angeletos, T.; Sgourou, E. N.; Andrianakis, A.; Diamantopoulou, A.; Londos, C. A.; Chroneos, A.

    2015-07-07

    Localized vibrational mode spectroscopy measurements on Czochralski silicon (Cz-Si) samples subjected to isothermal annealing at 450 °C are reported. First, we studied the effect of carbon (C) and tin (Sn) isovalent dopants on the aggregation kinetics of oxygen. It is determined that the reduction rate of oxygen is described by the Johnson-Mehl-Avrami equation in accordance with previous reports. The activation energy related with the reaction rate constant of the process is calculated to increase from Cz-Si, to C-doped Cz-Si (CCz-Si), to Sn-doped Cz-Si contained C (SnCz-Si). This is attributed to the presence of the isovalent dopants that may impact both the kinetics of the oxygen atoms and also may lead to the formation of other oxygen-related clusters. Second, we studied the effect of Sn on the formation and evolution of carbon-oxygen (C-O) defects. It was determined that the presence of Sn suppresses the formation of the C-O defects as indicated by the reduction in the strength of the 683, 626, and 586 cm{sup −1} well-known bands of C{sub s}O{sub i} defect. The phenomenon is attributed to the association of Sn with C atoms that may prevent the pairing of O with C. Third, we investigated the effect of C and Sn on the formation of thermal donors (TDs). Regarding carbon our results verified previous reports that carbon suppresses the formation of TDs. Interestingly, when both C and Sn are present in Si, very weak bands of TDs were observed, although it is known that Sn alone suppress their formation. This may be attributed to the competing strains of C and Sn in the Si lattice.

  7. Hydrogen passivation of interstitial iron in boron-doped multicrystalline silicon during annealing

    SciTech Connect

    Liu, AnYao; Sun, Chang; Macdonald, Daniel

    2014-11-21

    Effective hydrogenation of interstitial iron in boron-doped multicrystalline silicon wafers is reported. The multicrystalline silicon wafers were annealed with plasma-enhanced chemical vapour deposited silicon nitride films, at temperatures of 400 °C – 900 °C and for times from minutes to hours. At low temperatures where a combined effect of hydrogenation and precipitation of dissolved Fe is expected, results show that the hydrogenation process dominates the effect of precipitation. The concentrations of dissolved interstitial iron reduce by more than 90% after a 30-min anneal at temperatures between 600 and 900 °C. The most effective reduction occurs at 700 °C, where 99% of the initial dissolved iron is hydrogenated after 30 min. The results show that the observed reductions in interstitial Fe concentrations are not caused by the internal gettering of Fe at structural defects or by an enhanced diffusivity of Fe due to the presence of hydrogen. The hydrogenation process is conjectured to be the pairing of positively charged iron with negatively charged hydrogen, forming less recombination active Fe-H complexes in silicon.

  8. TiO2-Coated Carbon Nanotube-Silicon Solar Cells with Efficiency of 15%

    NASA Astrophysics Data System (ADS)

    Shi, Enzheng; Zhang, Luhui; Li, Zhen; Li, Peixu; Shang, Yuanyuan; Jia, Yi; Wei, Jinquan; Wang, Kunlin; Zhu, Hongwei; Wu, Dehai; Zhang, Sen; Cao, Anyuan

    2012-11-01

    Combining carbon nanotubes (CNTs), graphene or conducting polymers with conventional silicon wafers leads to promising solar cell architectures with rapidly improved power conversion efficiency until recently. Here, we report CNT-Si junction solar cells with efficiencies reaching 15% by coating a TiO2 antireflection layer and doping CNTs with oxidative chemicals, under air mass (AM 1.5) illumination at a calibrated intensity of 100 mW/cm2 and an active device area of 15 mm2. The TiO2 layer significantly inhibits light reflectance from the Si surface, resulting in much enhanced short-circuit current (by 30%) and external quantum efficiency. Our method is simple, well-controlled, and very effective in boosting the performance of CNT-Si solar cells.

  9. Study of the processes of carbonization and oxidation of porous silicon by Raman and IR spectroscopy

    SciTech Connect

    Vasin, A. V.; Okholin, P. N.; Verovsky, I. N.; Nazarov, A. N.; Lysenko, V. S.; Kholostov, K. I. Bondarenko, V. P.; Ishikawa, Y.

    2011-03-15

    Porous silicon layers were produced by electrochemical etching of single-crystal silicon wafers with the resistivity 10 {Omega} cm in the aqueous-alcohol solution of hydrofluoric acid. Raman spectroscopy and infrared absorption spectroscopy are used to study the processes of interaction of porous silicon with undiluted acetylene at low temperatures and the processes of oxidation of carbonized porous silicon by water vapors. It is established that, even at the temperature 550 Degree-Sign C, the silicon-carbon bonds are formed at the pore surface and the graphite-like carbon condensate emerges. It is shown that the carbon condensate inhibits oxidation of porous silicon by water vapors and contributes to quenching of white photoluminescence in the oxidized carbonized porous silicon nanocomposite layer.

  10. Influence of the doping level on the porosity of silicon nanowires prepared by metal-assisted chemical etching.

    PubMed

    Geyer, Nadine; Wollschläger, Nicole; Fuhrmann, Bodo; Tonkikh, Alexander; Berger, Andreas; Werner, Peter; Jungmann, Marco; Krause-Rehberg, Reinhard; Leipner, Hartmut S

    2015-06-19

    A systematic method to control the porosity of silicon nanowires is presented. This method is based on metal-assisted chemical etching (MACE) and takes advantage of an HF/H2O2 etching solution and a silver catalyst in the form of a thin patterned film deposited on a doped silicon wafer. It is found that the porosity of the etched nanowires can be controlled by the doping level of the wafer. For low doping concentrations, the wires are primarily crystalline and surrounded by only a very thin layer of porous silicon (pSi) layer, while for highly doped silicon, they are porous in their entire volume. We performed a series of controlled experiments to conclude that there exists a well-defined critical doping concentration separating the crystalline and porous regimes. Furthermore, transmission electron microscopy investigations showed that the pSi has also a crystalline morphology on a length scale smaller than the pore size, determined from positron annihilation lifetime spectroscopy to be mesoscopic. Based on the experimental evidence, we devise a theoretical model of the pSi formation during MACE and apply it for better control of the nanowire morphology.

  11. Boron and nitrogen-doped single-walled carbon nanotube

    NASA Astrophysics Data System (ADS)

    Moradian, Rostam; Azadi, Sam

    2006-10-01

    Boron nitride semiconducting zigzag single-walled carbon nanotube (SWCNT), BcbNcnC, as a potential candidate for making nanoelectronic devices is investigated by first-principle full potential density functional theory (DFT). In contrast to the previous DFT calculations, where just one boron and nitrogen doping configuration is considered, here for the average over all possible configurations density of states is calculated in terms of boron and nitrogen concentrations. For example in many body techniques (MBTs) [R. Moradian, Phys. Rev. B 89 (2004) 205425] it is found that semiconducting average gap, Eg, could be controlled by doping nitrogen and boron. But in contrast to MBTs where gap edge in the average density of states is sharp, the gap edge is smeared and impurity states appear in the SWCNT semiconducting gap.

  12. Novel techniques for selective doping of silicon carbide for device applications

    NASA Astrophysics Data System (ADS)

    Krishnan, Bharat

    Superior properties of Silicon Carbide (SiC), such as wide bandgap, high breakdown field and high thermal conductivity, have made it the frontrunner to replace Silicon for applications requiring high breakdown strength, mechanical and radiation hardness. Commercial SiC devices are already available, although their expected performance has not yet been realized due to a few problems related to device fabrication technologies, such as selective doping. This work explores non-traditional techniques for SiC doping (and selective doping in particular) based on previously unknown types of defect reactions in SiC and novel epitaxial growth techniques, which offer advantages over currently available technologies. Recent developments in SiC epitaxial growth techniques at MSU have enabled the growth of high quality SiC epitaxial layers at record low temperatures of 1,300°C. Lower growth temperatures have enabled highly doped epilayers for device applications. Prototypes of SiC PiN diodes fabricated, demonstrated low values of the series resistance associated with anodes grown by the low temperature epitaxial growth technique. At room temperature, 100 mum-diameter diodes with a forward voltage of 3.75 V and 3.23V at 1,000 A/cm2 before and after annealing were achieved. The reverse breakdown voltage was more than 680 V on average, even without surface passivation or edge termination. Reduced growth temperatures also enabled the possibility of selective epitaxial growth (SEG) of SiC with traditional masks used in the SEG in Si technology. Previously, SEG of SiC was impossible without high temperature masks. Good quality, defect free, selectively grown 4H-SiC epilayers were obtained using SiO2 mask. Nitrogen doped selectively grown epilayers were also obtained, which were almost completely ohmic, indicating doping exceeding 1x1019 cm-3. Moreover, conductivity modulation via defect reactions in SiC has been reported as a part of this work for the first time. The approach is

  13. Nitrogen-doped, boron-doped and undoped multiwalled carbon nanotube/polymer composites in WORM memory devices.

    PubMed

    Mamo, Messai A; Sustaita, Alan O; Tetana, Zikhona N; Coville, Neil J; Hümmelgen, Ivo A

    2013-03-29

    We report the preparation of write-once-read-many times memory devices using composites of carbon nanotubes and poly(vinyl phenol) sandwiched between Al electrodes. Three types of nanotubes (undoped multiwalled carbon nanotubes, nitrogen-doped multiwalled carbon nanotubes and boron-doped multiwalled carbon nanotubes) are investigated for this application. The OFF to ON state switching threshold is only slightly dependent on nanotube type, but the ON/OFF current ratio depends on both nanotube type and concentration and varies up to 10(6), decreasing for nanotube concentrations larger than 0.50 wt% in the composite.

  14. Nitrogen-doped, boron-doped and undoped multiwalled carbon nanotube/polymer composites in WORM memory devices

    NASA Astrophysics Data System (ADS)

    Mamo, Messai A.; Sustaita, Alan O.; Tetana, Zikhona N.; Coville, Neil J.; Hümmelgen, Ivo A.

    2013-03-01

    We report the preparation of write-once-read-many times memory devices using composites of carbon nanotubes and poly(vinyl phenol) sandwiched between Al electrodes. Three types of nanotubes (undoped multiwalled carbon nanotubes, nitrogen-doped multiwalled carbon nanotubes and boron-doped multiwalled carbon nanotubes) are investigated for this application. The OFF to ON state switching threshold is only slightly dependent on nanotube type, but the ON/OFF current ratio depends on both nanotube type and concentration and varies up to 106, decreasing for nanotube concentrations larger than 0.50 wt% in the composite.

  15. Modification of birefringence properties of nanostructured silicon with a change in the level of substrate doping with boron

    SciTech Connect

    Piskunov, N. A. Zabotnov, S. V.; Mamichev, D. A.; Golovan', L. A.; Timoshenko, V. Yu.; Kashkarov, P. K.

    2007-07-15

    Birefringence of porous-silicon films prepared by electrochemical etching of boron-doped Si(110) wafers with a resistivity of 25-45 m{theta} cm has been studied. The samples are found to exhibit the properties of a negative uniaxial crystal with the optical axis oriented along the [11-bar0] crystallographic direction. The possibility of using porous-silicon films as phase plates for light-polarization control in the near and mid-IR ranges is demonstrated.

  16. Optical Study of Liquid Crystal Doped with Multiwalled Carbon Nanotube

    NASA Astrophysics Data System (ADS)

    Gharde, Rita A.; Thakare, Sangeeta Y.

    2014-11-01

    Liquid crystalline materials have been useful for display devices i.e watches, calculators, automobile dashboards, televisions, multi media projectors etc. as well as in electro tunable lasers, optical fibers and lenses. Carbon nanotube is chosen as the main experimental factor in this study as it has been observed that Carbon Nano Tube influence the existing properties of liquid crystal host and with the doping of CNT can enhance1 the properties of LC. The combination of carbon nanotube (CNT) and liquid crystal (LC) materials show considerable interest in the scientific community due to unique physical properties of CNT in liquid crystal. Dispersion of CNTs in LCs can provide us a cheap, simple, versatile and effective means of controlling nanotube orientation on macroscopic scale with no restrictions on nanotube type. LCs have the long range orientational order rendering them to be anisotropic phases. If CNTs can be well dispersed in LC matrix, they will align with their long axes along the LC director to minimize distortions of the LC director field and the free energy. In this paper, we doped liquid crystal (Cholesteryl Nonanoate) by a small amount of multiwall carbon nanotube 0.05% and 0.1% wt. We found that by adding carbon nanotube to liquid crystals the melting point of the mixture is decreased but TNI is increased. It has been also observed that with incereas in concentration of carbon nanotube into liquid crystal shows conciderable effect on LC. The prepared samples were characterized using various techniques to study structural, thermal and optical properties i.e PMS, FPSS, UV-Vis spectroscopy, FT-IR measurements, and DTA.

  17. Silicon Carbide Derived Carbons: Experiments and Modeling

    SciTech Connect

    Kertesz, Miklos

    2011-02-28

    The main results of the computational modeling was: 1. Development of a new genealogical algorithm to generate vacancy clusters in diamond starting from monovacancies combined with energy criteria based on TBDFT energetics. The method revealed that for smaller vacancy clusters the energetically optimal shapes are compact but for larger sizes they tend to show graphitized regions. In fact smaller clusters of the size as small as 12 already show signatures of this graphitization. The modeling gives firm basis for the slit-pore modeling of porous carbon materials and explains some of their properties. 2. We discovered small vacancy clusters and their physical characteristics that can be used to spectroscopically identify them. 3. We found low barrier pathways for vacancy migration in diamond-like materials by obtaining for the first time optimized reaction pathways.

  18. Can Silicon Carbide Nanotubes Sense Carbon Dioxide?

    PubMed

    Zhao, Jing-Xiang; Ding, Yi-Hong

    2009-04-14

    Detection of carbon dioxide (CO2) is very important in environmental, biological, and industrial processes. Recent experiment showed that carbon nanotubes can act as chemical sensors for detecting certain gaseous molecules such as NH3, NO2, and O2. Unfortunately, the intrinsic stability of CO2 makes its sensing by CNTs unsuccessful due to the rather weak adsorption energy on the tube surface. In the present Article, we study the CO2 adsorption on various zigzag (n,0) (n = 6, 8, 10, 12, and 18) single-walled SiC nanotubes to explore the possibility of the SiC tube as potential gas sensors for CO2-detection by density functional theory (DFT) calculations. It is found that tube diameter and CO2 coverage play important roles in the tube-CO2 interaction. A single CO2 can be chemisorbed to the Si-C bonds of SiCNT with appreciable adsorption energy and can draw significant charge transfer from the SiCNT. The adsorption energy decreases gradually with increased tube diameter. The addition of more CO2 molecules in different patterns has been considered for the exemplified (8,0) tube, and CO2 molecules prefer to be as far from each other as possible. With the increase of CO2 coverage, the interaction between CO2 molecules and tube becomes weaker, and up to eight CO2 molecules can be adsorbed on the tube. In addition, we find that the band gap is lowered to a different degree due to the different adsorption. Because of the sufficient charge transfer and high concentration of CO2, SiCNT could be a perfect material for efficiently detecting the CO2 molecule.

  19. Use of Functionalized Carbon Nanotubes for Covalent Attachment of Nanotubes to Silicon

    NASA Technical Reports Server (NTRS)

    Tour, James M.; Dyke, Christopher A.; Maya, Francisco; Stewart, Michael P.; Chen, Bo; Flatt, Austen K.

    2012-01-01

    The purpose of the invention is to covalently attach functionalized carbon nanotubes to silicon. This step allows for the introduction of carbon nanotubes onto all manner of silicon surfaces, and thereby introduction of carbon nano - tubes covalently into silicon-based devices, onto silicon particles, and onto silicon surfaces. Single-walled carbon nanotubes (SWNTs) dispersed as individuals in surfactant were functionalized. The nano - tube was first treated with 4-t-butylbenzenediazonium tetrafluoroborate to give increased solubility to the carbon nanotube; the second group attached to the sidewall of the nanotube has a silyl-protected terminal alkyne that is de-protected in situ. This gives a soluble carbon nanotube that has functional groups appended to the sidewall that can be attached covalently to silicon. This reaction was monitored by UV/vis/NJR to assure direct covalent functionalization.

  20. Electrical transport in transverse direction through silicon carbon alloy multilayers containing regular size silicon quantum dots

    NASA Astrophysics Data System (ADS)

    Mandal, Aparajita; Kole, Arindam; Dasgupta, Arup; Chaudhuri, Partha

    2016-11-01

    Electrical transport in the transverse direction has been studied through a series of hydrogenated silicon carbon alloy multilayers (SiC-MLs) deposited by plasma enhanced chemical vapor deposition method. Each SiC-ML consists of 30 cycles of the alternating layers of a nearly amorphous silicon carbide (a-SiC:H) and a microcrystalline silicon carbide (μc-SiC:H) that contains high density of silicon quantum dots (Si-QDs). A detailed investigation by cross sectional TEM reveals preferential growth of densely packed Si-QDs of regular sizes ∼4.8 nm in diameter in a vertically aligned columnar structure within the SiC-ML. More than six orders of magnitude increase in transverse current through the SiC-ML structure were observed for decrease in the a-SiC:H layer thickness from 13 nm to 2 nm. The electrical transport mechanism was established to be a combination of grain boundary or band tail hopping and Frenkel-Poole (F-P) type conduction depending on the temperature and externally applied voltage ranges. Evaluation of trap concentration within the multilayer structures from the fitted room temperature current voltage characteristics by F-P function shows reduction up-to two orders of magnitude indicating an improvement in the short range order in the a-SiC:H matrix for decrease in the thickness of a-SiC:H layer.

  1. Deposition of silicon-carbon coatings from the plasma of a non-self-sustained arc discharge with a heated cathode

    NASA Astrophysics Data System (ADS)

    Grenadyorov, A. S.; Oskomov, K. V.; Solov'ev, A. A.; Rabotkin, S. V.

    2016-05-01

    Amorphous hydrogenated carbon doped with silicon oxide ( a-C:H:Si:O), which is referred to as silicon-carbon coatings in this work, consists of thin amorphous films, which are used as commercial solid lubricants due to their higher stability under extreme environmental conditions as compared to amorphous hydrogenated carbon. The deposition of silicon-carbon coatings from the plasma of a non-self-sustained arc discharge with a heated cathode is considered. Silicon-carbon coatings are deposited using polyphenul methylsiloxane as a precursor at a flow rate of 0.05 mL/min in an argon atmosphere at a pressure of 0.1 Pa. A high-frequency power supply is used to apply a high-frequency bias voltage to a substrate during deposition. After deposition, the mechanical properties of the coatings are studied. The maximum hardness of the coating is 20 GPa at a minimum friction coefficient of 0.16 and a wear rate of 1.3 × 10-5 mm3 N-1 m-1. Energy dispersive analysis shows that the coatings contain a significant content of carbon and oxygen (about 80 and 15%, respectively) and a low content of silicon (about 5%).

  2. Carrier dynamics and design optimization of electrolyte-induced inversion layer carbon nanotube-silicon Schottky junction solar cell

    NASA Astrophysics Data System (ADS)

    Chen, Wenchao; Seol, Gyungseon; Rinzler, Andrew G.; Guo, Jing

    2012-03-01

    Carrier dynamics of the electrolyte-induced inversion layer carbon nanotube-silicon Schottky junction solar cells is explored by numerical simulations. Operation mechanisms of the solar cells with and without the electrolyte-induced inversion layer are presented and compared, which clarifies the current flow mechanisms in a solar cell with an induced inversion layer. A heavily doped back contact layer can behave as a hole block layer. In addition to lowering contact resistance and surface recombination, it is particularly useful for improving carrier separation in an electrolyte-induced inversion layer solar cell or a metal-insulator-semiconductor grating solar cell.

  3. Development of Highly Conductive Boron-Doped Microcrystalline Silicon Films for Application in Solar Cells

    NASA Astrophysics Data System (ADS)

    Lei, Qing-Song; Wu, Zhi-Meng; Xi, Jian-Ping; Geng, Xin-Hua; Zhao, Ying; Sun, Jian

    We have examined the deposition of highly conductive boron-doped microcrystalline silicon (μc-Si:H) films for application in solar cells. Depositions were conducted in a very high frequency plasma enhanced chemical vapor deposition (VHF PECVD) chamber. In the deposition processes, various substrate temperatures (TS) were applied. Highly conductive p-type microcrystalline silicon films were obtained at substrate temperature lower than 210°C. The factors that affect the conductivity of the films were investigated. Results suggest that the dark conductivity, which was determined by the Hall mobility and carrier concentration, is influenced by the structure. The properties of the films are strongly dependent on the substrate temperature. With TS increasing, the dark conductivity (σd) increases initially; reach the maximum values at certain TS and then decrease. Also, we applied the boron-doped μc-Si:H as p-layers to the solar cells. An efficiency of about 8.5% for a solar cell with μc-Si:H p-layer was obtained.

  4. Synthesis of nitrogen-doped carbon nanostructures from polyurethane sponge for bioimaging and catalysis.

    PubMed

    Yang, Yong; Zhang, Jingchao; Zhuang, Jing; Wang, Xun

    2015-08-01

    A facile and environmentally friendly method was developed for the fabrication of N-doped carbon nanomaterials by hydrothermal treatment using polyurethane (PU) sponge as a carbon source. We have demonstrated that the hydrothermal decomposition of PU sponge involves top-down hydrolysis and bottom-up polymerization processes for the synthesis of N-doped carbon dots (N-CDs). Fluorescence spectroscopy and cytotoxicity studies indicated that these highly-soluble N-CDs show excellent photoluminescence properties and low cytotoxicity, and can be used as good probes for cellular imaging. Additionally, the N-doped hollow carbon nanostructures can be designed using a simple template method. The prepared N-doped double-shelled hollow carbon nanotubes exhibited excellent ORR electrocatalytic activity and superior durability. Indeed, our method described here can provide an efficient way to synthesize N-doped carbon-based materials for a broad range of applications.

  5. Gas Sensors Based on Coated and Doped Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Li, Jing; Meyyappan, Meyya

    2008-01-01

    Efforts are underway to develop inexpensive, low-power electronic sensors, based on single-walled carbon nanotubes (SWCNTs), for measuring part-per-million and part-per-billion of selected gases (small molecules) at room temperature. Chemically unmodified SWCNTs are mostly unresponsive to typical gases that one might wish to detect. However, the electrical resistances of SWCNTs can be made to vary with concentrations of gases of interest by coating or doping the SWCNTs with suitable materials. Accordingly, the basic idea of the present development efforts is to incorporate thus-treated SWCNTs into electronic devices that measure their electrical resistances.

  6. Green emission in carbon doped ZnO films

    SciTech Connect

    Tseng, L. T.; Yi, J. B. Zhang, X. Y.; Xing, G. Z.; Luo, X.; Li, S.; Fan, H. M.; Herng, T. S.; Ding, J.; Ionescu, M.

    2014-06-15

    The emission behavior of C-doped ZnO films, which were prepared by implantation of carbon into ZnO films, is investigated. Orange/red emission is observed for the films with the thickness of 60–100 nm. However, the film with thickness of 200 nm shows strong green emission. Further investigations by annealing bulk ZnO single crystals under different environments, i.e. Ar, Zn or C vapor, indicated that the complex defects based on Zn interstitials are responsible for the strong green emission. The existence of complex defects was confirmed by electron spin resonance (ESR) and low temperature photoluminescence (PL) measurement.

  7. A novel ultra steep dynamically reconfigurable electrostatically doped silicon nanowire Schottky Barrier FET

    NASA Astrophysics Data System (ADS)

    Singh, Sangeeta; Sinha, Ruchir; Kondekar, P. N.

    2016-05-01

    In this paper, an ultra steep, symmetric and dynamically configurable, electrostatically doped silicon nanowire Schottky FET (E-SiNW-SB-FET) based on dopant-free technology is investigated. It achieves the ultra steep sub-threshold slope (SS) due to the cumulative effect of weak impact-ionization induced positive feedback and electrostatic modulation of Schottky barrier heights at both source and drain terminals. It consists of axial nanowire heterostructure (silicide-intrinsic silicon-silicide) with three independent all-around gates, two gates are polarity control gates for dynamically reconfiguring the device polarity by modulating the effective Schottky barrier heights and a control gate switches the device ON and OFF. The most interesting features of the proposed structure are simplified fabrication process as the state-of-the-art for ion implantation and high thermal budget no more required for annealing. It is highly immune to process variations, doping control issues and random dopant fluctuations (RDF) and there are no mobility degradation issues related to high doping. A calibrated 3-D TCAD simulation results exhibit the SS of 2 mV/dec for n-type E-SiNW-SB-FET and 9 mV/dec for p-type E-SiNW-SB-FET for about five decades of current. Further, it resolves all the reliability related issues of IMOS as hot electron effects are no more limiting our device performance. It offers significant drive current of the order of 10-5-10-4 A and magnificently high ION/IOFF ratio of ∼108 along with the inherent advantages of symmetric device structure for its circuit realization.

  8. Sub-ambient carbon dioxide adsorption properties of nitrogen doped graphene

    SciTech Connect

    Tamilarasan, P.; Ramaprabhu, Sundara

    2015-04-14

    Carbon dioxide adsorption on carbon surface can be enhanced by doping the surface with heterogeneous atoms, which can increase local surface affinity. This study presents the carbon dioxide adsorption properties of nitrogen doped graphene at low pressures (<100 kPa). Graphene was exposed to nitrogen plasma, which dopes nitrogen atoms into carbon hexagonal lattice, mainly in pyridinic and pyrrolic forms. It is found that nitrogen doping significantly improves the CO{sub 2} adsorption capacity at all temperatures, due to the enrichment of local Lewis basic sites. In general, isotherm and thermodynamic parameters suggest that doped nitrogen sites have nearly same adsorption energy of surface defects and residual functional groups. The isosteric heat of adsorption remains in physisorption range, which falls with surface coverage, suggesting the distribution of magnitude of adsorption energy. The absolute values of isosteric heat and entropy of adsorption are slightly increased upon nitrogen doping.

  9. Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively

    PubMed Central

    Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

    2016-01-01

    Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50–15000 μmoL L−1 (cubic SiC NWs) and 5–8000 μmoL L−1 (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L−1 respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility. PMID:27109361

  10. Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively.

    PubMed

    Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

    2016-04-25

    Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50-15000 μmoL L(-1) (cubic SiC NWs) and 5-8000 μmoL L(-1) (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L(-1) respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility.

  11. Significant thermal conductivity reduction of silicon nanowire forests through discrete surface doping of germanium

    SciTech Connect

    Pan, Ying; Hong, Guo; Raja, Shyamprasad N.; Zimmermann, Severin; Poulikakos, Dimos; Tiwari, Manish K.

    2015-03-02

    Silicon nanowires (SiNWs) are promising materials for the realization of highly-efficient and cost effective thermoelectric devices. Reduction of the thermal conductivity of such materials is a necessary and viable pathway to achieve sufficiently high thermoelectric efficiencies, which are inversely proportional to the thermal conductivity. In this article, vertically aligned forests of SiNW and germanium (Ge)-doped SiNW with diameters around 100 nm have been fabricated, and their thermal conductivity has been measured. The results show that discrete surface doping of Ge on SiNW arrays can lead to 23% reduction in thermal conductivity at room temperature compared to uncoated SiNWs. Such reduction can be further enhanced to 44% following a thermal annealing step. By analyzing the binding energy changes of Ge-3d and Si-2p using X-ray photoelectron spectroscopy, we demonstrate that surface doped Ge interacts strongly with Si, enhancing phonon scattering at the Si-Ge interface as has also been shown in non-equilibrium molecular dynamics studies of single nanowires. Overall, our results suggest a viable pathway to improve the energy conversion efficiency of nanowire-forest thermoelectric nanomaterials.

  12. Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively.

    PubMed

    Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

    2016-01-01

    Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50-15000 μmoL L(-1) (cubic SiC NWs) and 5-8000 μmoL L(-1) (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L(-1) respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility. PMID:27109361

  13. Effect of silicon and sodium on thermoelectric properties of thallium doped lead telluride based materials

    SciTech Connect

    Zhang, Qinyong; Wang, H; Zhang, Qian; Liu, W.; Yu, Bo; Wang, H; Wang, D.; Ni, G; Chen, Gang; Ren, Z. F.

    2012-01-01

    Thallium (Tl)-doped lead telluride (Tl0.02Pb0.98Te) thermoelectric materials fabricated by ball milling and hot pressing have decent thermoelectric properties but weak mechanical strength. Addition of silicon (Si) nanoparticles strengthened the mechanical property by reducing the grain size and defect density but resulted in low electrical conductivity that was not desired for any thermoelectric materials. Fortunately, doping of sodium (Na) into the Si added Tl0.02Pb0.98Te brings back the high electrical conductivity and yields higher figure-of-merit ZT values of ~1.7 at 770 K. The ZT improvement by Si addition and Na doping in Tl0.02Pb0.98Te sample is the direct result of concurrent electron and phonon engineering by improving the power factor and lowering the thermal conductivity, respectively.

  14. Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively

    NASA Astrophysics Data System (ADS)

    Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

    2016-04-01

    Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50–15000 μmoL L‑1 (cubic SiC NWs) and 5–8000 μmoL L‑1 (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L‑1 respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility.

  15. Defect annealing in neutron and ion damaged silicon: Influence of defect clusters and doping

    NASA Astrophysics Data System (ADS)

    Fleming, R. M.; Seager, C. H.; Bielejec, E.; Vizkelethy, G.; Lang, D. V.; Campbell, J. M.

    2010-03-01

    We have explored defect annealing in radiation damaged silicon in a regime characterized by defect clusters and higher doping. Several types of pnp and npn Si bipolar transistors have been irradiated with ions and neutrons, then isochronally annealed from 300 to 600 K to study the evolution of deep level transient spectroscopy (DLTS) defect signatures. Variations in these data with radiation environment, Fermi level, annealing temperature, and doping density have been used to separate the contributions of three dominant defects to the DLTS defect spectra. We find that the normal Si divacancy and a divacancylike defect with similar properties make similar contributions to a DLTS peak normally associated with transitions from the single minus charge state of the divacancy. However the latter defect is clearly associated with the presence of defect clusters. The vacancy-donor center can also contribute to this high temperature DLTS signature, and its relative importance can be quantitatively assessed by varying doping density and the bias applied to the sample p/n junctions during annealing, and also by the observation that another, donor-related defect grows in as this center anneals. The ratio of vacancy-donor and vacancy-oxygen pairs appears to accurately follow that seen in earlier studies of gamma-irradiated Si. Discussions are presented concerning the effects of defect clustering on the structure, appearance, and evolution of the defects we have identified.

  16. Theory of nitrogen doping of carbon nanoribbons: Edge effects

    SciTech Connect

    Jiang, Jie; Turnbull, Joseph; Lu, Wenchang; Boguslawski, Piotr; Bernholc, J.

    2012-01-01

    Nitrogen doping of a carbon nanoribbon is profoundly affected by its one-dimensional character, symmetry, and interaction with edge states. Using state-of-the-art ab initio calculations, including hybrid exact-exchange density functional theory, we find that, for N-doped zigzag ribbons, the electronic properties are strongly dependent upon sublattice effects due to the non-equivalence of the two sublattices. For armchair ribbons, N-doping effects are different depending upon the ribbon family: for families 2 and 0, the N-induced levels are in the conduction band, while for family 1 the N levels are in the gap. In zigzag nanoribbons, nitrogen close to the edge is a deep center, while in armchair nanoribbons its behavior is close to an effective-mass-like donor with the ionization energy dependent on the value of the band gap. In chiral nanoribbons, we find strong dependence of the impurity level and formation energy upon the edge position of the dopant, while such site-specificity is not manifested in the magnitude of the magnetization.

  17. Theory of nitrogen doping of carbon nanoribbons: Edge effects

    DOE PAGESBeta

    Jiang, Jie; Turnbull, Joseph; Lu, Wenchang; Oak Ridge National Lab.; Boguslawski, Piotr; Univ. of Warsaw; Bernholc, J.; Oak Ridge National Lab.

    2012-01-01

    Nitrogen doping of a carbon nanoribbon is profoundly affected by its one-dimensional character, symmetry, and interaction with edge states. Using state-of-the-art ab initio calculations, including hybrid exact-exchange density functional theory, we find that, for N-doped zigzag ribbons, the electronic properties are strongly dependent upon sublattice effects due to the non-equivalence of the two sublattices. For armchair ribbons, N-doping effects are different depending upon the ribbon family: for families 2 and 0, the N-induced levels are in the conduction band, while for family 1 the N levels are in the gap. In zigzag nanoribbons, nitrogen close to the edge is amore » deep center, while in armchair nanoribbons its behavior is close to an effective-mass-like donor with the ionization energy dependent on the value of the band gap. In chiral nanoribbons, we find strong dependence of the impurity level and formation energy upon the edge position of the dopant, while such site-specificity is not manifested in the magnitude of the magnetization.« less

  18. Synthesis of nitrogen-doped carbon nanostructures from polyurethane sponge for bioimaging and catalysis

    NASA Astrophysics Data System (ADS)

    Yang, Yong; Zhang, Jingchao; Zhuang, Jing; Wang, Xun

    2015-07-01

    A facile and environmentally friendly method was developed for the fabrication of N-doped carbon nanomaterials by hydrothermal treatment using polyurethane (PU) sponge as a carbon source. We have demonstrated that the hydrothermal decomposition of PU sponge involves top-down hydrolysis and bottom-up polymerization processes for the synthesis of N-doped carbon dots (N-CDs). Fluorescence spectroscopy and cytotoxicity studies indicated that these highly-soluble N-CDs show excellent photoluminescence properties and low cytotoxicity, and can be used as good probes for cellular imaging. Additionally, the N-doped hollow carbon nanostructures can be designed using a simple template method. The prepared N-doped double-shelled hollow carbon nanotubes exhibited excellent ORR electrocatalytic activity and superior durability. Indeed, our method described here can provide an efficient way to synthesize N-doped carbon-based materials for a broad range of applications.A facile and environmentally friendly method was developed for the fabrication of N-doped carbon nanomaterials by hydrothermal treatment using polyurethane (PU) sponge as a carbon source. We have demonstrated that the hydrothermal decomposition of PU sponge involves top-down hydrolysis and bottom-up polymerization processes for the synthesis of N-doped carbon dots (N-CDs). Fluorescence spectroscopy and cytotoxicity studies indicated that these highly-soluble N-CDs show excellent photoluminescence properties and low cytotoxicity, and can be used as good probes for cellular imaging. Additionally, the N-doped hollow carbon nanostructures can be designed using a simple template method. The prepared N-doped double-shelled hollow carbon nanotubes exhibited excellent ORR electrocatalytic activity and superior durability. Indeed, our method described here can provide an efficient way to synthesize N-doped carbon-based materials for a broad range of applications. Electronic supplementary information (ESI) available. See DOI

  19. Low-energy tetrahedral polymorphs of carbon, silicon, and germanium

    NASA Astrophysics Data System (ADS)

    Mujica, Andrés; Pickard, Chris J.; Needs, Richard J.

    2015-06-01

    Searches for low-energy tetrahedral polymorphs of carbon and silicon have been performed using density functional theory computations and the ab initio random structure searching approach. Several of the hypothetical phases obtained in our searches have enthalpies that are lower or comparable to those of other polymorphs of group 14 elements that have either been experimentally synthesized or recently proposed as the structure of unknown phases obtained in experiments, and should thus be considered as particularly interesting candidates. A structure of P b a m symmetry with 24 atoms in the unit cell was found to be a low-energy, low-density metastable polymorph in carbon, silicon, and germanium. In silicon, P b a m is found to have a direct band gap at the zone center with an estimated value of 1.4 eV, which suggests applications as a photovoltaic material. We have also found a low-energy chiral framework structure of P 41212 symmetry with 20 atoms per cell containing fivefold spirals of atoms, whose projected topology is that of the so-called Cairo-type two-dimensional pentagonal tiling. We suggest that P 41212 is a likely candidate for the structure of the unknown phase XIII of silicon. We discuss P b a m and P 41212 in detail, contrasting their energetics and structures with those of other group 14 elements, particularly the recently proposed P 42/n c m structure, for which we also provide a detailed interpretation as a network of tilted diamondlike tetrahedra.

  20. Amorphous silicon-carbon alloys and amorphous carbon from direct methane and ethylene activation by ECR

    SciTech Connect

    Conde, J.P.; Chu, V.; Giorgis, F.; Pirri, C.F.; Arekat, S.

    1997-07-01

    Hydrogenated amorphous silicon-carbon alloys are prepared using electron-cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition. Hydrogen is introduced into the source resonance cavity as an excitation gas. Silane is introduced in the main chamber in the vicinity of the plasma stream, whereas the carbon source gases, methane or ethylene, are introduced either with the silane or with the hydrogen as excitation gases. The effect of the type of carbon-source gas, excitation gas mixture and silane-to-carbon source gas flow ratio on the deposition rate, bandgap, subgap density of states, spin density and hydrogen evolution are studied.

  1. The electronic properties of noble metal doped silicon nanocrystals using hybrid density functional theory

    NASA Astrophysics Data System (ADS)

    Mayfield, Cedric Leon

    One of the most challenging issues in semiconductor physics is to engineer band structures for a particular device. Contemporary photovoltaic (PV) and photoelectrochemical (PEC) devices rely on defect energy levels and nano-scaling to customize their band structures. As the length scale of a material becomes comparable to the exciton Bohr radius the free particle behavior of charge carriers transition to bound states where energy levels are quantized. In this thesis, hybrid density functional theory has been used to study the electronic properties of silicon nanocrystals (SiNCs) having 75, 150 and 300 silicon atoms. The atomic coordinates were defined by two geometries (diamond and wurtzite) of bulk phase silicon. The global minimum energy structures for both geometries at each size were found for particular variation on magnetic moments, dopant, dopant position, and surface passivation with hydrogen. We report our results on bond lengths, binding energies, formation energies, HOMO-LUMO gaps, and density of states. We also report results on electronic occupations derived from Mulliken population analysis. Our results show that the SiNCs have tunable HOMO-LUMO gaps with respect to size and that the inclusion of noble metals produces inter-gap defect levels. In addition, we have found that hydrogen passivation affected the doping behavior significantly. Contrary to the general expectation, hydrogen passivation contributed to the energy levels near the highest occupied orbital. Overall, our results suggest the SiNCs can be used to construct optimal photovoltaic applications or used individually as photocatalysts.

  2. Metal-doped single-walled carbon nanotubes and production thereof

    DOEpatents

    Dillon, Anne C.; Heben, Michael J.; Gennett, Thomas; Parilla, Philip A.

    2007-01-09

    Metal-doped single-walled carbon nanotubes and production thereof. The metal-doped single-walled carbon nanotubes may be produced according to one embodiment of the invention by combining single-walled carbon nanotube precursor material and metal in a solution, and mixing the solution to incorporate at least a portion of the metal with the single-walled carbon nanotube precursor material. Other embodiments may comprise sputter deposition, evaporation, and other mixing techniques.

  3. Nitrogen-doped carbon nanotube as a potential metal-free catalyst for CO oxidation.

    PubMed

    Lin, I-Hsiang; Lu, Yu-Huan; Chen, Hsin-Tsung

    2016-04-28

    We elucidate the possibility of nitrogen-doped carbon nanotube as a robust catalyst for CO oxidation. We have performed first-principles calculations considering the spin-polarization effect to demonstrate the reaction of CO oxidation catalyzed by the nitrogen-doped carbon nanotube. The calculations show that O2 species can be partially reduced with charge transfer from the nitrogen-doped carbon nanotube and directly chemisorbed on the C-N sites of the nitrogen-doped carbon nanotube. The partially reduced O2 species at the C-N sites can further directly react with a CO molecule via the Eley-Rideal mechanism with the barriers of 0.45-0.58 eV for the different diameter of nanotube. Ab initio molecular dynamics (AIMD) simulations were performed and showed that the oxidation of CO occurs by the Eley-Rideal mechanism. The relationship between the curvature and reactivity of the nitrogen doped carbon nanotube was also unraveled. It appears that the barrier height of the rate-limiting step depends on the curvature of the nitrogen-doped carbon nanotube in the trend of (3,3)-NCNT < (4,4)-NCNT < (5,5)-NCNT (decreases with increased curvature). Using this relationship, we can predict the barriers for other N-doped carbon nanotubes with different tube diameters. Our results reveal that the nitrogen doped carbon nanomaterials can be a good, low-cost, and metal-free catalyst for CO oxidation.

  4. Doped carbon-sulfur species nanocomposite cathode for Li--S batteries

    SciTech Connect

    Wang, Donghai; Xu, Tianren; Song, Jiangxuan

    2015-12-29

    We report a heteroatom-doped carbon framework that acts both as conductive network and polysulfide immobilizer for lithium-sulfur cathodes. The doped carbon forms chemical bonding with elemental sulfur and/or sulfur compound. This can significantly inhibit the diffusion of lithium polysulfides in the electrolyte, leading to high capacity retention and high coulombic efficiency.

  5. Analysis and calculation of electronic properties and light absorption of defective sulfur-doped silicon and theoretical photoelectric conversion efficiency.

    PubMed

    Jiang, He; Chen, Changshui

    2015-04-23

    Most material properties can be traced to electronic structures. Black silicon produced from SF6 or sulfur powder via irradiation with femtosecond laser pulses displays decreased infrared absorption after annealing, with almost no corresponding change in visible light absorption. The high-intensity laser pulses destroy the original crystal structure, and the doping element changes the material performance. In this work, the structural and electronic properties of several sulfur-doped silicon systems are investigated using first principle calculations. Depending on the sulfur concentration (level of doping) and the behavior of the sulfur atoms in the silicon lattice, different states or an absence of states are exhibited, compared with the undoped system. Moreover, the visible-infrared light absorption intensities are structure specific. The results of our theoretical calculations show that the conversion efficiency of sulfur-doped silicon solar cells depends on the sulfur concentrations. Additionally, two types of defect configurations exhibit light absorption characteristics that differ from the other configurations. These two structures produce a rapid increase in the theoretical photoelectric conversion efficiency in the range of the specific chemical potential studied. By controlling the positions of the atomic sulfur and the sulfur concentration in the preparation process, an efficient photovoltaic (PV) material may be obtainable.

  6. Analysis and calculation of electronic properties and light absorption of defective sulfur-doped silicon and theoretical photoelectric conversion efficiency.

    PubMed

    Jiang, He; Chen, Changshui

    2015-04-23

    Most material properties can be traced to electronic structures. Black silicon produced from SF6 or sulfur powder via irradiation with femtosecond laser pulses displays decreased infrared absorption after annealing, with almost no corresponding change in visible light absorption. The high-intensity laser pulses destroy the original crystal structure, and the doping element changes the material performance. In this work, the structural and electronic properties of several sulfur-doped silicon systems are investigated using first principle calculations. Depending on the sulfur concentration (level of doping) and the behavior of the sulfur atoms in the silicon lattice, different states or an absence of states are exhibited, compared with the undoped system. Moreover, the visible-infrared light absorption intensities are structure specific. The results of our theoretical calculations show that the conversion efficiency of sulfur-doped silicon solar cells depends on the sulfur concentrations. Additionally, two types of defect configurations exhibit light absorption characteristics that differ from the other configurations. These two structures produce a rapid increase in the theoretical photoelectric conversion efficiency in the range of the specific chemical potential studied. By controlling the positions of the atomic sulfur and the sulfur concentration in the preparation process, an efficient photovoltaic (PV) material may be obtainable. PMID:25798659

  7. DEVELOPMENT OF DOPED NANOPOROUS CARBONS FOR HYDROGEN STORAGE

    SciTech Connect

    Lueking, Angela D.; Li, Qixiu; Badding, John V.; Fonseca, Dania; Gutierrez, Humerto; Sakti, Apurba; Adu, Kofi; Schimmel, Michael

    2010-03-31

    Hydrogen storage materials based on the hydrogen spillover mechanism onto metal-doped nanoporous carbons are studied, in an effort to develop materials that store appreciable hydrogen at ambient temperatures and moderate pressures. We demonstrate that oxidation of the carbon surface can significantly increase the hydrogen uptake of these materials, primarily at low pressure. Trace water present in the system plays a role in the development of active sites, and may further be used as a strategy to increase uptake. Increased surface density of oxygen groups led to a significant enhancement of hydrogen spillover at pressures less than 100 milibar. At 300K, the hydrogen uptake was up to 1.1 wt. % at 100 mbar and increased to 1.4 wt. % at 20 bar. However, only 0.4 wt% of this was desorbable via a pressure reduction at room temperature, and the high lowpressure hydrogen uptake was found only when trace water was present during pretreatment. Although far from DOE hydrogen storage targets, storage at ambient temperature has significant practical advantages oner cryogenic physical adsorbents. The role of trace water in surface modification has significant implications for reproducibility in the field. High-pressure in situ characterization of ideal carbon surfaces in hydrogen suggests re-hybridization is not likely under conditions of practical interest. Advanced characterization is used to probe carbon-hydrogen-metal interactions in a number of systems and new carbon materials have been developed.

  8. Ferromagnetism in carbon-doped zinc oxide systems.

    PubMed

    Nagare, B J; Chacko, Sajeev; Kanhere, D G

    2010-02-25

    We report spin-polarized density functional calculations of ferromagnetic properties for a series of ZnO clusters and ZnO solid containing one or two substitutional carbon impurities. We analyze the eigenvalue spectra, spin densities, molecular orbitals, and induced magnetic moments for ZnC, Zn(2)C, Zn(2)OC, carbon-substituted Zn(n)O(n) (n = 3-10, 12) clusters and the bulk ZnO. The results show that the doping induces magnetic moment of approximately 2 mu(B) in all the cases. All systems with two carbon impurities show ferromagnetic interaction, except when carbon atoms share the same zinc atom as the nearest neighbor. This ferromagnetic interaction is predominantly mediated via pi-bonds in the ring structures and through pi- and sigma-bonds in the three-dimensional structure. The calculations also show that the interaction is significantly enhanced in the solid, bringing out the role of dimensionality of the Zn-O network connecting two carbon atoms.

  9. Biocompatibility and toxicological studies of carbon nanotubes doped with nitrogen.

    PubMed

    Carrero-Sanchez, J C; Elías, A L; Mancilla, R; Arrellín, G; Terrones, H; Laclette, J P; Terrones, M

    2006-08-01

    In this report, we compare the toxicological effects between pure carbon multiwalled nanotubes (MWNTs) and N-doped multiwalled carbon (CNx) nanotubes. Different doses of tubes were administered in various ways to mice: nasal, oral, intratracheal, and intraperitoneal. We have found that when MWNTs were injected into the mice's trachea, the mice could die by dyspnea depending on the MWNTs doses. However, CNx nanotubes never caused the death of any mouse. We always found that CNx nanotubes were far more tolerated by the mice when compared to MWNTs. Extremely high concentrations of CNx nanotubes administrated directly into the mice's trachea only induced granulomatous inflammatory responses. Importantly, all other routes of administration did not induce signs of distress or tissue changes on any treated mouse. We therefore believe that CNx nanotubes are less harmful than MWNTs or SWNTs and might be more advantageous for bioapplications.

  10. Tractable Chemical Models for CVD of Silicon and Carbon

    NASA Technical Reports Server (NTRS)

    Blanquet, E.; Gokoglu, S. A.

    1993-01-01

    Tractable chemical models are validated for the CVD of silicon and carbon. Dilute silane (SiH4) and methane (CH4) in hydrogen are chosen as gaseous precursors. The chemical mechanism for each systems Si and C is deliberately reduced to three reactions in the models: one in the gas phase and two at the surface. The axial-flow CVD reactor utilized in this study has well-characterized flow and thermal fields and provides variable deposition rates in the axial direction. Comparisons between the experimental and calculated deposition rates are made at different pressures and temperatures.

  11. The Oxidation of CVD Silicon Carbide in Carbon Dioxide

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.; Nguyen, QuynchGiao N.

    1997-01-01

    Chemically-vapor-deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO2) at temperatures of 1200-1400 C for times between 100 and 500 hours at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate limiting kinetic laws are discussed. Oxidation of SiC by CO2 is negligible compared to the rates measured for other oxidants typically found in combustion environments: oxygen and water vapor.

  12. Quest for the perfect dilute magnetic semiconductor: Investigation of chromium-doped gallium(III) selenide on silicon

    NASA Astrophysics Data System (ADS)

    Yitamben, Esmeralda Nelly

    The potential for spin-based electronics (spintronics) to revolutionize silicon-based device structures requires development of new magnetic materials. The optimal room temperature ferromagnetic material should be both impedance and lattice matched to silicon. We have begun studies on a new class of silicon-compatible dilute magnetic semiconductors based on transition metal (TM) doped III-VI materials. These III-VI materials are of particular physics interest due to their intrinsic vacancies, since the resulting multiple incorporation sites for the transition metal may enable separate control of magnetic and electronic doping. This dissertation demonstrates that the inclusion of the transition metal Cr into the III-VI semiconductor Ga2Se3 leads to room-temperature ferromagnetism, semiconducting electronic states, and epitaxial thin films resembling pure Ga2Se3 on Si(001). This new material is definitely compatible with silicon up to several atomic percent Cr, laying the ground-work for incorporation of Cr-doped Ga2Se3 into the ever-present silicon technology. In this work, we investigate the magnetism, chemical composition, structure, morphology and solubility limit of a possible dilute magnetic semiconductor, namely Cr-doped Ga2Se 3, using magnetometry, x-ray photoemission spectroscopy (XPS), x-ray absorption fine structure (XAFS), scanning tunneling microscopy (STM), and scanning Auger microscopy (SAM). The ferromagnetism observed in this system could be linked to Cr occupying an octahedral site in a zincblende structure, as revealed by photoemission and XAFS. There is a strong correlation between the magnetism observed, the surface morphology and film thickness. We propose that this ferromagnetism is ultimately mediated by the presence of intrinsic vacancies within the zincblende Ga2Se3 structure, where the presence of a Cr in a locally-octahedral structure only happens because of vacancies, and the Cr-induced states at the top of the valence band overlap the Se

  13. Silicon Oxycarbide/Carbon Nanohybrids with Tiny Silicon Oxycarbide Particles Embedded in Free Carbon Matrix Based on Photoactive Dental Methacrylates.

    PubMed

    Wang, Meimei; Xia, Yonggao; Wang, Xiaoyan; Xiao, Ying; Liu, Rui; Wu, Qiang; Qiu, Bao; Metwalli, Ezzeldin; Xia, Senlin; Yao, Yuan; Chen, Guoxin; Liu, Yan; Liu, Zhaoping; Meng, Jian-Qiang; Yang, Zhaohui; Sun, Ling-Dong; Yan, Chun-Hua; Müller-Buschbaum, Peter; Pan, Jing; Cheng, Ya-Jun

    2016-06-01

    A new facile scalable method has been developed to synthesize silicon oxycarbide (SiOC)/carbon nanohybrids using difunctional dental methacrylate monomers as solvent and carbon source and the silane coupling agent as the precursor for SiOC. The content (from 100% to 40% by mass) and structure (ratio of disordered carbon over ordered carbon) of the free carbon matrix have been systematically tuned by varying the mass ratio of methacryloxypropyltrimethoxysilane (MPTMS) over the total mass of the resin monomers from 0.0 to 6.0. Compared to the bare carbon anode, the introduction of MPTMS significantly improves the electrochemical performance as a lithium-ion battery anode. The initial and cycled discharge/charge capacities of the SiOC/C nanohybrid anodes reach maximum with the MPTMS ratio of 0.50, which displays very good rate performance as well. Detailed structures and electrochemical performance as lithium-ion battery anodes have been systematically investigated. The structure-property correlation and corresponding mechanism have been discussed. PMID:27186647

  14. Control performance and biomembrane disturbance of carbon nanotube artificial water channels by nitrogen-doping.

    PubMed

    Yang, Yuling; Li, Xiaoyi; Jiang, Jinliang; Du, Huailiang; Zhao, Lina; Zhao, Yuliang

    2010-10-26

    To establish ways to control the performance of artificial water channels is a big challenge. With molecular dynamics studies, we found that water flow inside the water channels of carbon nanotubes (CNTs) can be controlled by reducing or intensifying interaction energy between water molecules and the wall of the CNTs channel. A way of example toward this significant goal was demonstrated by the doping of nitrogen into the wall of CNTs. Different ratios of nitrogen doping result in different controllable water performance which is dominated mainly through a gradient of van der Waals forces created by the heteroatom doping in the wall of CNTs. Further results revealed that the nitrogen-doped CNT channels show less influence on the integrality of biomembrane than the pristine one, while the nitrogen-doped double-walled carbon nanotube exhibits fewer disturbances to the cellular membrane integrality than the nitrogen-doped single-walled carbon nanotube when interacting with biomembranes.

  15. Controlled release of alendronate from nitrogen-doped mesoporous carbon

    DOE PAGESBeta

    Saha, Dipendu; Spurri, Amanda; Chen, Jihua; Hensley, Dale K.

    2016-04-13

    With this study, we have synthesized a nitrogen doped mesoporous carbon with the BET surface area of 1066 m2/g, total pore volume 0.6 cm3/g and nitrogen content of 0.5%. Total alendronate adsorption in this carbon was ~5%. The release experiments were designed in four different media with sequential pH values of 1.2, 4.5, 6.8 and 7.4 for 3, 1, 3 and 5 h, respectively and at 37 °C to imitate the physiological conditions of stomach, duodenum, small intestine and colon, respectively. Release of the drug demonstrated a controlled fashion; only 20% of the drug was released in the media withmore » pH = 1.2, whereas 64% of the drug was released in pH = 7.4. This is in contrary to pure alendronate that was completely dissolved within 30 min in the first release media (pH = 1.2) only. The relatively larger uptake of alendronate in this carbon and its sustained fashion of release can be attributed to the hydrogen bonding between the drug and the nitrogen functionalities on carbon surface. Based on this result, it can be inferred that this formulation may lower the side effects of oral delivery of alendronate.« less

  16. The composite capacitive behaviors of the N and S dual doped ordered mesoporous carbon with ultrahigh doping level

    NASA Astrophysics Data System (ADS)

    Zhang, Deyi; Lei, Longyan; Shang, Yonghua; Wang, Kunjie; Wang, Yi

    2016-01-01

    Heteroatoms doping provides a promising strategy for improving the energy density of supercapacitors based on the carbon electrodes. In this paper, we present a N and S dual doped ordered mesoporous carbon with ultrahigh doping level using dimethylglyoxime as pristine precursor. The N doping content of the reported materials varies from 6.6 to 15.6 at.% dependent on the carbonization temperature, and the S doping content varies from 0.46 to 1.01 at.%. Due to the ultrahigh heteroatoms doping content, the reported materials exhibit pronounced pseudo-capacitance. Meanwhile, the reported materials exhibit high surface areas (640-869 m2 g-1), large pore volume (0.71-1.08 cm2 g-1) and ordered pore structure. The outstanding textual properties endow the reported materials excellent electrical double-layer capacitance (EDLC). By effectively combining the pseudo-capacitance with EDLC, the reported materials exhibit a surprising energy storage/relax capacity with the highest specific capacitance of 565 F g-1, which value is 3.3 times higher than that of pristine CMK-3, and can compete against some conventional pseudo-capacitance materials.

  17. The 11 micron Silicon Carbide Feature in Carbon Star Shells

    NASA Technical Reports Server (NTRS)

    Speck, A. K.; Barlow, M. J.; Skinner, C. J.

    1996-01-01

    Silicon carbide (SiC) is known to form in circumstellar shells around carbon stars. SiC can come in two basic types - hexagonal alpha-SiC or cubic beta-SiC. Laboratory studies have shown that both types of SiC exhibit an emission feature in the 11-11.5 micron region, the size and shape of the feature varying with type, size and shape of the SiC grains. Such a feature can be seen in the spectra of carbon stars. Silicon carbide grains have also been found in meteorites. The aim of the current work is to identity the type(s) of SiC found in circumstellar shells and how they might relate to meteoritic SiC samples. We have used the CGS3 spectrometer at the 3.8 m UKIRT to obtain 7.5-13.5 micron spectra of 31 definite or proposed carbon stars. After flux-calibration, each spectrum was fitted using a chi(exp 2)-minimisation routine equipped with the published laboratory optical constants of six different samples of small SiC particles, together with the ability to fit the underlying continuum using a range of grain emissivity laws. It was found that the majority of observed SiC emission features could only be fitted by alpha-SiC grains. The lack of beta-SiC is surprising, as this is the form most commonly found in meteorites. Included in the sample were four sources, all of which have been proposed to be carbon stars, that appear to show the SiC feature in absorption.

  18. Empirical determination of the energy band gap narrowing in p{sup +} silicon heavily doped with boron

    SciTech Connect

    Yan, Di Cuevas, Andres

    2014-11-21

    In the analysis of highly doped silicon, energy band gap narrowing (BGN) and degeneracy effects may be accounted for separately, as a net BGN in conjunction with Fermi-Dirac statistics, or lumped together in an apparent BGN used with Boltzmann statistics. This paper presents an experimental study of silicon highly doped with boron, with the aim of evaluating the applicability of previously reported BGN models. Different boron diffusions covering a broad range of dopant densities were prepared, and their characteristic recombination current parameters J{sub 0} were measured using a contactless photoconductance technique. The BGN was subsequently extracted by matching theoretical simulations of carrier transport and recombination in each of the boron diffused regions and the measured J{sub 0} values. An evaluation of two different minority carrier mobility models indicates that their impact on the extraction of the BGN is relatively small. After considering possible uncertainties, it can be concluded that the BGN is slightly larger in p{sup +} silicon than in n{sup +} silicon, in qualitative agreement with theoretical predictions by Schenk. Nevertheless, in quantitative terms that theoretical model is found to slightly underestimate the BGN in p{sup +} silicon. With the two different parameterizations derived in this paper for the BGN in p{sup +} silicon, both statistical approaches, Boltzmann and Fermi-Dirac, provide a good agreement with the experimental data.

  19. Erbium-doped spiral amplifiers with 20 dB of net gain on silicon.

    PubMed

    Vázquez-Córdova, Sergio A; Dijkstra, Meindert; Bernhardi, Edward H; Ay, Feridun; Wörhoff, Kerstin; Herek, Jennifer L; García-Blanco, Sonia M; Pollnau, Markus

    2014-10-20

    Spiral-waveguide amplifiers in erbium-doped aluminum oxide on a silicon wafer are fabricated and characterized. Spirals of several lengths and four different erbium concentrations are studied experimentally and theoretically. A maximum internal net gain of 20 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1532 nm for two sample configurations with waveguide lengths of 12.9 cm and 24.4 cm and concentrations of 1.92 × 10(20) cm(-3) and 0.95 × 10(20) cm(-3), respectively. The noise figures of these samples are reported. Gain saturation as a result of increasing signal power and the temperature dependence of gain are studied.

  20. Spin-on-doping for output power improvement of silicon nanowire array based thermoelectric power generators

    SciTech Connect

    Xu, B. Fobelets, K.

    2014-06-07

    The output power of a silicon nanowire array (NWA)-bulk thermoelectric power generator (TEG) with Cu contacts is improved by spin-on-doping (SOD). The Si NWAs used in this work are fabricated via metal assisted chemical etching (MACE) of 0.01–0.02 Ω cm resistivity n- and p-type bulk, converting ~4% of the bulk thickness into NWs. The MACE process is adapted to ensure crystalline NWs. Current-voltage and Seebeck voltage-temperature measurements show that while SOD mainly influences the contact resistance in bulk, it influences both contact resistance and power factor in NWA-bulk based TEGs. According to our experiments, using Si NWAs in combination with SOD increases the output power by an order of 3 under the same heating power due to an increased power factor, decreased thermal conductivity of the NWA and reduced Si-Cu contact resistance.

  1. Ultrafast spontaneous emission of copper-doped silicon enhanced by an optical nanocavity.

    PubMed

    Sumikura, Hisashi; Kuramochi, Eiichi; Taniyama, Hideaki; Notomi, Masaya

    2014-01-01

    Dopants in silicon (Si) have attracted attention in the fields of photonics and quantum optics. However, the optical characteristics are limited by the small spontaneous emission rate of dopants in Si. This study demonstrates a large increase in the spontaneous emission rate of copper isoelectronic centres (Cu-IECs) doped into Si photonic crystal nanocavities. In a cavity with a quality factor (Q) of ~16,000, the photoluminescence (PL) lifetime of the Cu-IECs is 1.1 ns, which is 30 times shorter than the lifetime of a sample without a cavity. The PL decay rate is increased in proportion to Q/Vc (Vc is the cavity mode volume), which indicates the Purcell effect. This is the first demonstration of a cavity-enhanced ultrafast spontaneous emission from dopants in Si, and it may lead to the development of fast and efficient Si light emitters and Si quantum optical devices based on dopants with efficient optical access.

  2. Electronic and magnetic properties of yttrium-doped silicon carbide nanotubes: Density functional theory investigations

    SciTech Connect

    Khaira, Jobanpreet S.; Jain, Richa N.; Chakraborty, Brahmananda; Ramaniah, Lavanya M.

    2015-06-24

    The electronic structure of yttrium-doped Silicon Carbide Nanotubes has been theoretically investigated using first principles density functional theory (DFT). Yttrium atom is bonded strongly on the surface of the nanotube with a binding energy of 2.37 eV and prefers to stay on the hollow site at a distance of around 2.25 Å from the tube. The semi-conducting nanotube with chirality (4, 4) becomes half mettalic with a magnetic moment of 1.0 µ{sub B} due to influence of Y atom on the surface. There is strong hybridization between d orbital of Y with p orbital of Si and C causing a charge transfer from d orbital of the Y atom to the tube. The Fermi level is shifted towards higher energy with finite Density of States for only upspin channel making the system half metallic and magnetic which may have application in spintronic devices.

  3. Improvement in passivation quality and open-circuit voltage in silicon heterojunction solar cells by the catalytic doping of phosphorus atoms

    NASA Astrophysics Data System (ADS)

    Tsuzaki, Shogo; Ohdaira, Keisuke; Oikawa, Takafumi; Koyama, Koichi; Matsumura, Hideki

    2015-07-01

    We apply phosphorus (P) doping to amorphous silicon (a-Si)/crystalline silicon (c-Si) heterojunction solar cells realized by exposing c-Si to P-related radicals generated by the catalytic cracking of PH3 molecules (Cat-doping). An ultrathin n+-layer formed by P Cat-doping acts to improve the effective minority carrier lifetime (τeff) and implied open-circuit voltage (implied Voc) owing to its field effect by which minority holes are sent back from an a-Si/c-Si interface. An a-Si/c-Si heterojunction solar cell with a P Cat-doped layer shows better solar cell performance, particularly in Voc, than the cell without P Cat-doping. This result demonstrates the feasibility of applying Cat-doping to a-Si/c-Si heterojunction solar cells, owing to the advantage of the low-temperature (<200 °C) process of Cat-doping.

  4. Mechanical Properties of Silicone Rubber Acoustic Lens Material Doped with Fine Zinc Oxide Powders for Ultrasonic Medical Probe

    NASA Astrophysics Data System (ADS)

    Yamamoto, Noriko; Yohachi; Yamashita; Itsumi, Kazuhiro

    2009-07-01

    The mechanical properties of high-temperature-vulcanization silicone (Q) rubber doped with zinc oxide (ZnO) fine powders have been investigated to develop an acoustic lens material with high reliability. The ZnO-doped Q rubber with an acoustic impedance (Z) of 1.46×106 kg·m-2·s-1 showed a tear strength of 43 N/mm and an elongation of 560%. These mechanical property values were about 3 times higher than those of conventional acoustic Q lens materials. The ZnO-doped Q rubbers also showed a lower abrasion loss. These superior characteristics are attributable to the microstructure with fewer origins of breaks; few pores and spherical fine ZnO powder. The high mechanical properties of ZnO-doped Q rubber acoustic lenses enable higher performance during long-life and safe operation during diagnosis using medical array probe applications.

  5. Simultaneous iron gettering and passivation of p-type monocrystalline silicon using a negatively charged aluminum-doped dielectric

    NASA Astrophysics Data System (ADS)

    Das, Arnab; Rohatgi, Ajeet

    2012-12-01

    Rapid gettering of iron from p-type c-Si has been achieved using a negatively charged spin-on Al-doped glass. After a 10 min oxidation to cure the Al-doped glass, >99% of Fe can be gettered from silicon wafers. This is comparable to, and under some processing conditions better than, the efficiency of conventional POCl3 gettering. In the same short oxidation step, the Al-doped glass also passivates p-Si surfaces with surface recombination velocities of 100 cm/s and 10 600 cm/s achieved for surface doping of 6 × 1015 cm-3 and 4 × 1019 cm-3, respectively. These passivation results are comparable to those achieved with thermal SiO2 layers.

  6. Nano-structured composite of Si/(S-doped-carbon nanowire network) as anode material for lithium-ion batteries

    NASA Astrophysics Data System (ADS)

    Shao, Dan; Tang, Daoping; Yang, Jianwen; Li, Yanwei; Zhang, Lingzhi

    2015-11-01

    Novel nanostructured silicon composites, Si/Poly(3,4-ethylenedioxythiophene) nanowire network (Si/PNW) and Si/(S-doped-carbon nanowire network) (Si/S-CNW), are prepared by a soft-template polymerization of 3,4-ethylenedioxythiophene (EDOT) using sodium dodecyl sulfate (SDS) as surfactant with the presence of Si nanoparticles and a subsequent carbonization of Si/PNW, respectively. The presence of Si nanoparticles in the soft-template polymerization of EDOT plays a critical role in the formation of PEDOT nanowire network instead of 1D nanowire. After the carbonization of PEDOT, the S-doped-carbon nanowire network matrix shows higher electrical conductivity than PNW counterpart, which facilitates to construct robust conductive bridges between Si nanoparticles and provide large electrode/electrolyte interfaces for rapid charge transfer reactions. Thus, Si/S-CNW composite exhibits excellent cycling stability and rate capability as anode material, retaining a specific capacity of 820 mAh g-1 after 400 cycles with a very small capacity fade of 0.09% per cycle.

  7. Enhanced Crystallization Behaviors of Silicon-Doped Sb2Te Films: Optical Evidences

    PubMed Central

    Guo, Shuang; Xu, Liping; Zhang, Jinzhong; Hu, Zhigao; Li, Tao; Wu, Liangcai; Song, Zhitang; Chu, Junhao

    2016-01-01

    The optical properties and structural variations of silicon (Si) doped Sb2Te (SST) films as functions of temperature (210–620 K) and Si concentration (0–33%) have been investigated by the means of temperature dependent Raman scattering and spectroscopic ellipsometry experiments. Based upon the changes in Raman phonon modes and dielectric functions, it can be concluded that the temperature ranges for intermediates and transition states are estimated to 150, 120, 90, and 0 K, corresponding to ST, SST25%, SST28%, and SST33% films, respectively. The phenomenon also can be summarized by the thermal evolutions of interband electronic transition energies (En) and partial spectral weight integral (I). The disappearance of intermediate (INT) state for SST33% film between amorphous (AM) and hexagonal (HEX) phases can be attributed to the acceleratory crystallization of HEX phase by Si introduction. It illustrates that the risk of phase separation (Sb and Te) during the cyclic phase-change processes decreases with the increasing Si concentration. The enhanced crystallization behaviors can optimize the data retention ability and the long term stability of ST by Si doping, which are important indicators for phase change materials. The performance improvement has been analyzed qualitatively from the optical perspective. PMID:27640336

  8. Enhanced Crystallization Behaviors of Silicon-Doped Sb2Te Films: Optical Evidences

    NASA Astrophysics Data System (ADS)

    Guo, Shuang; Xu, Liping; Zhang, Jinzhong; Hu, Zhigao; Li, Tao; Wu, Liangcai; Song, Zhitang; Chu, Junhao

    2016-09-01

    The optical properties and structural variations of silicon (Si) doped Sb2Te (SST) films as functions of temperature (210–620 K) and Si concentration (0–33%) have been investigated by the means of temperature dependent Raman scattering and spectroscopic ellipsometry experiments. Based upon the changes in Raman phonon modes and dielectric functions, it can be concluded that the temperature ranges for intermediates and transition states are estimated to 150, 120, 90, and 0 K, corresponding to ST, SST25%, SST28%, and SST33% films, respectively. The phenomenon also can be summarized by the thermal evolutions of interband electronic transition energies (En) and partial spectral weight integral (I). The disappearance of intermediate (INT) state for SST33% film between amorphous (AM) and hexagonal (HEX) phases can be attributed to the acceleratory crystallization of HEX phase by Si introduction. It illustrates that the risk of phase separation (Sb and Te) during the cyclic phase-change processes decreases with the increasing Si concentration. The enhanced crystallization behaviors can optimize the data retention ability and the long term stability of ST by Si doping, which are important indicators for phase change materials. The performance improvement has been analyzed qualitatively from the optical perspective.

  9. Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures

    NASA Astrophysics Data System (ADS)

    Arezki, Hakim; Boutchich, Mohamed; Alamarguy, David; Madouri, Ali; Alvarez, José; Cabarrocas, Pere Roca i.; Kleider, Jean-Paul; Yao, Fei; Lee, Young Hee

    2016-10-01

    Large-area graphene film is of great interest for a wide spectrum of electronic applications, such as field effect devices, displays, and solar cells, among many others. Here, we fabricated heterostructures composed of graphene (Gr) grown by chemical vapor deposition (CVD) on copper substrate and transferred to SiO2/Si substrates, capped by n- or p-type doped amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition. Using Raman scattering we show that despite the mechanical strain induced by the a-Si:H deposition, the structural integrity of the graphene is preserved. Moreover, Hall effect measurements directly on the embedded graphene show that the electronic properties of CVD graphene can be modulated according to the doping type of the a-Si:H as well as its phase i.e. amorphous or nanocrystalline. The sheet resistance varies from 360 Ω sq-1 to 1260 Ω sq-1 for the (p)-a-Si:H/Gr (n)-a-Si:H/Gr, respectively. We observed a temperature independent hole mobility of up to 1400 cm2 V-1 s-1 indicating that charge impurity is the principal mechanism limiting the transport in this heterostructure. We have demonstrated that embedding CVD graphene under a-Si:H is a viable route for large scale graphene based solar cells or display applications.

  10. Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures.

    PubMed

    Arezki, Hakim; Boutchich, Mohamed; Alamarguy, David; Madouri, Ali; Alvarez, José; Cabarrocas, Pere Roca I; Kleider, Jean-Paul; Yao, Fei; Hee Lee, Young

    2016-10-12

    Large-area graphene film is of great interest for a wide spectrum of electronic applications, such as field effect devices, displays, and solar cells, among many others. Here, we fabricated heterostructures composed of graphene (Gr) grown by chemical vapor deposition (CVD) on copper substrate and transferred to SiO2/Si substrates, capped by n‑ or p-type doped amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition. Using Raman scattering we show that despite the mechanical strain induced by the a-Si:H deposition, the structural integrity of the graphene is preserved. Moreover, Hall effect measurements directly on the embedded graphene show that the electronic properties of CVD graphene can be modulated according to the doping type of the a-Si:H as well as its phase i.e. amorphous or nanocrystalline. The sheet resistance varies from 360 Ω sq(-1) to 1260 Ω sq(-1) for the (p)-a-Si:H/Gr (n)-a-Si:H/Gr, respectively. We observed a temperature independent hole mobility of up to 1400 cm(2) V(-1) s(-1) indicating that charge impurity is the principal mechanism limiting the transport in this heterostructure. We have demonstrated that embedding CVD graphene under a-Si:H is a viable route for large scale graphene based solar cells or display applications. PMID:27506254

  11. Enhanced Crystallization Behaviors of Silicon-Doped Sb2Te Films: Optical Evidences.

    PubMed

    Guo, Shuang; Xu, Liping; Zhang, Jinzhong; Hu, Zhigao; Li, Tao; Wu, Liangcai; Song, Zhitang; Chu, Junhao

    2016-01-01

    The optical properties and structural variations of silicon (Si) doped Sb2Te (SST) films as functions of temperature (210-620 K) and Si concentration (0-33%) have been investigated by the means of temperature dependent Raman scattering and spectroscopic ellipsometry experiments. Based upon the changes in Raman phonon modes and dielectric functions, it can be concluded that the temperature ranges for intermediates and transition states are estimated to 150, 120, 90, and 0 K, corresponding to ST, SST25%, SST28%, and SST33% films, respectively. The phenomenon also can be summarized by the thermal evolutions of interband electronic transition energies (En) and partial spectral weight integral (I). The disappearance of intermediate (INT) state for SST33% film between amorphous (AM) and hexagonal (HEX) phases can be attributed to the acceleratory crystallization of HEX phase by Si introduction. It illustrates that the risk of phase separation (Sb and Te) during the cyclic phase-change processes decreases with the increasing Si concentration. The enhanced crystallization behaviors can optimize the data retention ability and the long term stability of ST by Si doping, which are important indicators for phase change materials. The performance improvement has been analyzed qualitatively from the optical perspective. PMID:27640336

  12. Structural determination of niobium-doped silicon clusters by far-infrared spectroscopy and theory.

    PubMed

    Li, Xiaojun; Claes, Pieterjan; Haertelt, Marko; Lievens, Peter; Janssens, Ewald; Fielicke, André

    2016-02-17

    In this work, the structures of cationic SinNb(+) (n = 4-12) clusters are determined using the combination of infrared multiple photon dissociation (IR-MPD) and density functional theory (DFT) calculations. The experimental IR-MPD spectra of the argon complexes of SinNb(+) are assigned by comparison to the calculated IR spectra of low-energy structures of SinNb(+) that are identified using the stochastic 'random kick' algorithm in conjunction with the BP86 GGA functional. It is found that the Nb dopant tends to bind in an apex position of the Sin framework for n = 4-9 and in surface positions with high coordination numbers for n = 10-12. For the larger doped clusters, it is suggested that multiple isomers coexist and contribute to the experimental spectra. The structural evolution of SinNb(+) clusters is similar to V-doped silicon clusters (J. Am. Chem. Soc., 2010, 132, 15589-15602), except for the largest size investigated (n = 12), since V takes an endohedral position in Si12V(+). The interaction with a Nb atom, with its partially unfilled 4d orbitals leads to a significant stability enhancement of the Sin framework as reflected, e.g. by high binding energies and large HOMO-LUMO gaps. PMID:26853772

  13. The enhanced efficiency of graphene-silicon solar cells by electric field doping.

    PubMed

    Yu, Xuegong; Yang, Lifei; Lv, Qingmin; Xu, Mingsheng; Chen, Hongzheng; Yang, Deren

    2015-04-28

    The graphene-silicon (Gr-Si) Schottky junction solar cell has been recognized as one of the most low-cost candidates in photovoltaics due to its simple fabrication process. However, the low Gr-Si Schottky barrier height largely limits the power conversion efficiency of Gr-Si solar cells. Here, we demonstrate that electric field doping can be used to tune the work function of a Gr film and therefore improve the photovoltaic performance of the Gr-Si solar cell effectively. The electric field doping effects can be achieved either by connecting the Gr-Si solar cell to an external power supply or by polarizing a ferroelectric polymer layer integrated in the Gr-Si solar cell. Exploration of both of the device architecture designs showed that the power conversion efficiency of Gr-Si solar cells is more than twice of the control Gr-Si solar cells. Our study opens a new avenue for improving the performance of Gr-Si solar cells.

  14. Fabrication and Doping Methods for Silicon Nano- and Micropillar Arrays for Solar-Cell Applications: A Review.

    PubMed

    Elbersen, Rick; Vijselaar, Wouter; Tiggelaar, Roald M; Gardeniers, Han; Huskens, Jurriaan

    2015-11-18

    Silicon is one of the main components of commercial solar cells and is used in many other solar-light-harvesting devices. The overall efficiency of these devices can be increased by the use of structured surfaces that contain nanometer- to micrometer-sized pillars with radial p/n junctions. High densities of such structures greatly enhance the light-absorbing properties of the device, whereas the 3D p/n junction geometry shortens the diffusion length of minority carriers and diminishes recombination. Due to the vast silicon nano- and microfabrication toolbox that exists nowadays, many versatile methods for the preparation of such highly structured samples are available. Furthermore, the formation of p/n junctions on structured surfaces is possible by a variety of doping techniques, in large part transferred from microelectronic circuit technology. The right choice of doping method, to achieve good control of junction depth and doping level, can contribute to an improvement of the overall efficiency that can be obtained in devices for energy applications. A review of the state-of-the-art of the fabrication and doping of silicon micro and nanopillars is presented here, as well as of the analysis of the properties and geometry of thus-formed 3D-structured p/n junctions. PMID:26436660

  15. Oxidative unzipping of stacked nitrogen-doped carbon nanotube cups.

    PubMed

    Dong, Haifeng; Zhao, Yong; Tang, Yifan; Burkert, Seth C; Star, Alexander

    2015-05-27

    We demonstrate a facile synthesis of different nanostructures by oxidative unzipping of stacked nitrogen-doped carbon nanotube cups (NCNCs). Depending on the initial number of stacked-cup segments, this method can yield graphene nanosheets (GNSs) or hybrid nanostructures comprised of graphene nanoribbons partially unzipped from a central nanotube core. Due to the stacked-cup structure of as-synthesized NCNCs, preventing complete exposure of graphitic planes, the unzipping mechanism is hindered, resulting in incomplete unzipping; however, individual, separated NCNCs are completely unzipped, yielding individual nitrogen-doped GNSs. Graphene-based materials have been employed as electrocatalysts for many important chemical reactions, and it has been proposed that increasing the reactive edges results in more efficient electrocatalysis. In this paper, we apply these graphene conjugates as electrocatalysts for the oxygen reduction reaction (ORR) to determine how the increase in reactive edges affects the electrocatalytic activity. This investigation introduces a new method for the improvement of ORR electrocatalysts by using nitrogen dopants more effectively, allowing for enhanced ORR performance with lower overall nitrogen content. Additionally, the GNSs were functionalized with gold nanoparticles (GNPs), resulting in a GNS/GNP hybrid, which shows efficient surface-enhanced Raman scattering and expands the scope of its application in advanced device fabrication and biosensing.

  16. Plasmon-enhanced phonon and ionized impurity scattering in doped silicon

    SciTech Connect

    Chen, Ming-Jer Hsieh, Shang-Hsun; Chen, Chuan-Li

    2015-07-28

    Historically, two microscopic electron scattering calculation methods have been used to fit macroscopic electron mobility data in n-type silicon. The first method was performed using a static system that included long-range electron-plasmon scattering; however, the well-known Born approximation fails in this case when dealing with electron-impurity scattering. In the second method, sophisticated numerical simulations were developed around plasmon-excited potential fluctuations and successfully reproduced the mobility data at room temperature. In this paper, we propose a third method as an alternative to the first method. First, using a fluctuating system, which was characterized on the basis of our recently experimentally extracted plasmon-excited potential fluctuations, the microscopic calculations reveal enhanced short-range scattering of electrons by phonons and ionized impurities due to increased electron temperature and increased screening length, respectively. The increased hot electron population makes the Born approximation hold, which eases the overall calculation task substantially. Then, we return to the static system while incorporating plasmon-enhanced impurity scattering. The resulting macroscopic electron mobility shows fairly good agreement with data over wide ranges of temperatures (200–400 K) and doping concentrations (10{sup 15}–10{sup 20 }cm{sup −3}). Application of the proposed method to strained silicon is also demonstrated.

  17. TDAB-induced DNA plasmid condensation on the surface of a reconstructed boron doped silicon substrate

    NASA Astrophysics Data System (ADS)

    Mougin, Antoine; Babak, Valéry G.; Palmino, Frank; Bêche, Eric; Baros, Francis; Hunting, Darel J.; Sanche, Léon; Fromm, Michel

    Our study aims at a better control and understanding of the transfer of a complex [DNA supercoiled plasmid - dodecyltrimethylammonium surfactant] layer from a liquid-vapour water interface onto a silicon surface without any additional cross-linker. The production of the complexed layer and its transfer from the aqueous subphase to the substrate is achieved with a Langmuir-Blodgett device. The substrate consists of a reconstructed boron doped silicon substrate with a nanometer-scale roughness. Using X-ray photoelectron spectroscopy and atomic force microscopy measurements, it is shown that the DNA complexes are stretched in a disorderly manner throughout a 2-4 nm high net-like structure. This architecture is composed of tilted cationic surfactant molecules bound electrostatically to DNA, which exhibits a characteristic network arrangement with a measured average fiber diameter of about 45 ± 15 nm covering the entire surface. The mechanism of transfer of this layer onto the planar surface of the semi-conductor and the parameters of the process are analysed and illustrated by atomic force microscopy snapshots. The molecular layer exhibits the typical characteristics of a spinodal decomposition pattern or dewetting features. Plasmid molecules appear like long flattened fibers covering the surface, forming holes of various shapes and areas. The cluster-cluster aggregation of the complex structure gets very much denser on the substrate edge. The supercoiled DNA plasmids undergo conformational changes and a high degree of condensation and aggregation is observed. Perspectives and potential applications are considered.

  18. High Mobility and Stability of Thin-Film Transistors Using Silicon-Doped Amorphous Indium Tin Oxide Semiconductors

    NASA Astrophysics Data System (ADS)

    Seo, T. W.; Kim, Hyun-Suk; Lee, Kwang-Ho; Chung, Kwun-Bum; Park, Jin-Seong

    2014-09-01

    We report the fabrication of high-performance thin-film transistors (TFTs) with an amorphous silicon indium tin oxide ( a-SITO) channel, which was deposited by cosputtering a silicon dioxide and an indium tin oxide target. The effect of the silicon doping on the device performance and stability of the a-SITO TFTs was investigated. The field-effect mobility and stability under positive bias stress of the a-SITO TFTs with optimized Si content (0.22 at.% Si) dramatically improved to 28.7 cm2/Vs and 1.5 V shift of threshold voltage, respectively, compared with the values (0.72 cm2/Vs and 8.9 V shift) for a-SITO TFTs with 4.22 at.% Si. The role of silicon in a-SITO TFTs is discussed based on various physical and chemical analyses, including x-ray absorption spectroscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry measurements.

  19. Controlling the Bandgap of Boron Nitride Nanotubes with Carbon Doping

    NASA Astrophysics Data System (ADS)

    Mousavi, Hamze; Bagheri, Mehran

    2015-08-01

    This study explores the effects of doping by carbon (C) atoms on electronic properties of (10,10) and (16,0) boron nitride (BN) nanotubes (NTs). We exploit the random tight-binding model with Green's function technique and coherent potential approximation to show that the C dopant causes a decrease in the bandgap of the BN NTs, and their matching Van Hove singularities (VHS) in the density of states (DOS) are broadened. When the impurity concentration is large enough, the form of the DOS of the BN NTs becomes similar to that of metallic (10,10) and semiconducting (16,0) C NTs and their VHS get sharpened. This work might provide opportunities for creating new optoelectronic devices based on BN honeycomb nanosystems.

  20. New insight into the microstructure and doping of unintentionally n-type microcrystalline silicon carbide

    NASA Astrophysics Data System (ADS)

    Pomaska, Manuel; Köhler, Florian; Zastrow, Uwe; Mock, Jan; Pennartz, Frank; Muthmann, Stefan; Astakhov, Oleksandr; Carius, Reinhard; Finger, Friedhelm; Ding, Kaining

    2016-05-01

    Microcrystalline silicon carbide (μc-SiC:H) deposited by hot wire chemical vapor deposition (HWCVD) and plasma-enhanced chemical vapor deposition (PECVD) provide advantageous opto-electronic properties, making it attractive as a window layer material in silicon thin-film and silicon heterojunction solar cells. However, it is still not clear which electrical transport mechanisms yield dark conductivities up to 10-3 S/cm without the active use of any doping gas and how the transport mechanisms are related to the morphology of μc-SiC:H. To investigate these open questions systematically, we investigated HWCVD and PECVD grown layers that provide a very extensive range of dark conductivity values from 10-12 S/cm to 10-3 S/cm. We found out by secondary ion mass spectrometry measurements that no direct correlation exists between oxygen or nitrogen concentrations and high dark conductivity σd, high charge carrier density n, and low activation energy Ea. Higher σd seems to rise from lower hydrogen concentrations or/and larger coherent domain sizes LSiC. On the one hand, the decrease of σd with increasing hydrogen concentration might be due to the inactivation of donors by hydrogen passivation that gives rise to decreased n. On the other hand, qualitatively consistent with the Seto model, the lower σd and lower n might be caused by smaller LSiC, since the fraction of depleted grain boundaries with higher Ea increases accordingly.

  1. Binary and ternary doping of nitrogen, boron, and phosphorus into carbon for enhancing electrochemical oxygen reduction activity.

    PubMed

    Choi, Chang Hyuck; Park, Sung Hyeon; Woo, Seong Ihl

    2012-08-28

    N-doped carbon, a promising alternative to Pt catalyst for oxygen reduction reactions (ORRs) in acidic media, is modified in order to increase its catalytic activity through the additional doping of B and P at the carbon growth step. This additional doping alters the electrical, physical, and morphological properties of the carbon. The B-doping reinforces the sp(2)-structure of graphite and increases the portion of pyridinic-N sites in the carbon lattice, whereas P-doping enhances the charge delocalization of the carbon atoms and produces carbon structures with many edge sites. These electrical and physical alternations of the N-doped carbon are more favorable for the reduction of the oxygen on the carbon surface. Compared with N-doped carbon, B,N-doped or P,N-doped carbon shows 1.2 or 2.1 times higher ORR activity at 0.6 V (vs RHE) in acidic media. The most active catalyst in the reaction is the ternary-doped carbon (B,P,N-doped carbon), which records -6.0 mA/mg of mass activity at 0.6 V (vs RHE), and it is 2.3 times higher than that of the N-doped carbon. These results imply that the binary or ternary doping of B and P with N into carbon induces remarkable performance enhancements, and the charge delocalization of the carbon atoms or number of edge sites of the carbon is a significant factor in deciding the oxygen reduction activity in carbon-based catalysts. PMID:22769428

  2. Synthesis, electronic structure, and Raman scattering of phosphorous-doped single-wall carbon nanotubes

    SciTech Connect

    Sumpter, Bobby G; Cruz Silva, Eduardo; Meunier, Vincent; Terrones Maldonado, Humberto; Terrones Maldonado, Mauricio; Campos-Delgado, Jessica; Jorio, Ado; Pimenta, M. A.; Rao, A. M.; Maciel, I. O.

    2009-01-01

    Substitutional phosphorous doping in single-wall carbon nanotubes (SWNTs) is investigated by density functional theory and resonance Raman spectroscopy. Electronic structure calculations predict charge localization on the phosphorus atom, which is also responsible of generating non-dispersive valence and conduction bands close to the Fermi level. Analysis of electron and phonon renormalization in the double-resonance Raman process confirms the different nature of the phosphorous donor doping (localized) when compared to nitrogen substitutional doping (non-localized) in SWNTs.

  3. Pyrolysis of cellulose under ammonia leads to nitrogen-doped nanoporous carbon generated through methane formation.

    PubMed

    Luo, Wei; Wang, Bao; Heron, Christopher G; Allen, Marshall J; Morre, Jeff; Maier, Claudia S; Stickle, William F; Ji, Xiulei

    2014-01-01

    Here, we present a simple one-step fabrication methodology for nitrogen-doped (N-doped) nanoporous carbon membranes via annealing cellulose filter paper under NH3. We found that nitrogen doping (up to 10.3 at %) occurs during cellulose pyrolysis under NH3 at as low as 550 °C. At 700 °C or above, N-doped carbon further reacts with NH3, resulting in a large surface area (up to 1973.3 m(2)/g). We discovered that the doped nitrogen, in fact, plays an important role in the reaction, leading to carbon gasification. CH4 was experimentally detected by mass spectrometry as a product in the reaction between N-doped carbon and NH3. When compared to conventional activated carbon (1533.6 m(2)/g), the N-doped nanoporous carbon (1326.5 m(2)/g) exhibits more than double the unit area capacitance (90 vs 41 mF/m(2)).

  4. Investigations of segregation phenomena in highly strained Mn-doped Ge wetting layers and Ge quantum dots embedded in silicon

    SciTech Connect

    Prestat, E. Porret, C.; Favre-Nicolin, V.; Tainoff, D.; Boukhari, M.; Bayle-Guillemaud, P.; Jamet, M.; Barski, A.

    2014-03-10

    In this Letter, we investigate manganese diffusion and the formation of Mn precipitates in highly strained, few monolayer thick, Mn-doped Ge wetting layers and nanometric size Ge quantum dot heterostructures embedded in silicon. We show that in this Ge(Mn)/Si system manganese always precipitates and that the size and the position of Mn clusters (precipitates) depend on the growth temperature. At high growth temperature, manganese strongly diffuses from germanium to silicon, whereas decreasing the growth temperature reduces the manganese diffusion. In the germanium quantum dots layers, Mn precipitates are detected, not only in partially relaxed quantum dots but also in fully strained germanium wetting layers between the dots.

  5. Oxidation Behavior of Carbon Fiber Reinforced Silicon Carbide Composites

    NASA Technical Reports Server (NTRS)

    Valentin, Victor M.

    1995-01-01

    Carbon fiber reinforced Silicon Carbide (C-SiC) composites offer high strength at high temperatures and good oxidation resistance. However, these composites present some matrix microcracks which allow the path of oxygen to the fiber. The aim of this research was to study the effectiveness of a new Silicon Carbide (SiC) coating developed by DUPONT-LANXIDE to enhance the oxidation resistance of C-SiC composites. A thermogravimetric analysis was used to determine the oxidation rate of the samples at different temperatures and pressures. The Dupont coat proved to be a good protection for the SiC matrix at temperatures lower than 1240 C at low and high pressures. On the other hand, at temperatures above 1340 C the Dupont coat did not seem to give good protection to the composite fiber and matrix. Even though some results of the tests have been discussed, because of time restraints, only a small portion of the desired tests could be completed. Therefore, no major conclusions or results about the effectiveness of the coat are available at this time.

  6. Reactive melt infiltration of silicon-molybdenum alloys into microporous carbon preforms

    NASA Technical Reports Server (NTRS)

    Singh, M.; Behrendt, D. R.

    1995-01-01

    Investigations on the reactive melt infiltration of silicon-1.7 and 3.2 at.% molybdenum alloys into microporous carbon preforms have been carried out by modeling, differential thermal analysis (DTA), and melt infiltration experiments. These results indicate that the pore volume fraction of the carbon preform is a very important parameter in determining the final composition of the reaction-formed silicon carbide and the secondary phases. Various undesirable melt infiltration results, e.g. choking-off, specimen cracking, silicon veins, and lake formation, and their correlation with inadequate preform properties are presented. The liquid silicon-carbon reaction exotherm temperatures are influenced by the pore and carbon particle size of the preform and the compositions of infiltrants. Room temperature flexural strength and fracture toughness of materials made by the silicon-3.2 at.% molybdenum alloy infiltration of medium pore size preforms are also discussed.

  7. Methods of Attaching or Grafting Carbon Nanotubes to Silicon Surfaces and Composite Structures Derived Therefrom

    NASA Technical Reports Server (NTRS)

    Tour, James M. (Inventor); Chen, Bo (Inventor); Flatt, Austen K. (Inventor); Stewart, Michael P. (Inventor); Dyke, Christopher A. (Inventor); Maya, Francisco (Inventor)

    2012-01-01

    The present invention is directed toward methods of attaching or grafting carbon nanotubes (CNTs) to silicon surfaces. In some embodiments, such attaching or grafting occurs via functional groups on either or both of the CNTs and silicon surface. In some embodiments, the methods of the present invention include: (1) reacting a silicon surface with a functionalizing agent (such as oligo(phenylene ethynylene)) to form a functionalized silicon surface; (2) dispersing a quantity of CNTs in a solvent to form dispersed CNTs; and (3) reacting the functionalized silicon surface with the dispersed CNTs. The present invention is also directed to the novel compositions produced by such methods.

  8. NHC-Stabilized Silicon-Carbon Mixed Cumulene.

    PubMed

    Wang, Zhendong; Zhang, Jianying; Li, Jianfeng; Cui, Chunming

    2016-08-24

    The NHC-stabilized silicon-carbon mixed cumulene (Me3Si)2C═Si(IPr)═Si(IPr)═C(SiMe3)2 (3, IPr = 1,3-diisopropyl-4,5-dimethyl-imidazol-2-ylidene) has been prepared by reaction of Ar(SiMe3)NK with the NHC-stabilized silene (Me3Si)2C═Si(SiMe3)Cl(IPr) (2) in toluene at low temperature via the elimination of trimethylsilyl and chloride groups from 2. X-ray crystal analysis of 3 indicated the formal C═Si═Si═C cumulene skeleton with the short Si-Si double bond distance of 2.1896(10) Å. DFT calculations disclosed its zwitterionic character. Reaction of 3 with diphenylacetylene resulted in the formation of a silatriafulvene with an exocyclic NHC-stabilized silene moiety. PMID:27513613

  9. Carbon nanostructures on silicon substrates suitable for nanolithography

    SciTech Connect

    Abdi, Y.; Mohajerzadeh, S.; Hoseinzadegan, H.; Koohsorkhi, J.

    2006-01-30

    We report the application of vertically grown carbon nanotubes (CNTs) for submicron and nanolithography. The growth of CNTs is performed on silicon substrates using a nickel-seeded plasma-enhanced chemical vapor deposition method at a temperature of 650 deg. C and with a mixture of C{sub 2}H{sub 2} and H{sub 2}. The grown CNTs are encapsulated by a titanium-dioxide film and then mechanically polished to expose the buried nanotubes, and a plasma ashing step finalizes the process. The emission of electrons from the encapsulated nanotubes is used to write patterns on a resist-coated substrate placed opposite to the main CNT holding one. Scanning electron microscope has been used to investigate the nanotubes and the formation of nano-metric lines. Also a novel approach is presented to create isolated nanotubes from a previously patterned cluster growth.

  10. Functionalization of nitrogen-doped carbon nanotubes with gallium to form Ga-CNx-multi-wall carbon nanotube hybrid materials

    NASA Astrophysics Data System (ADS)

    Simmons, Trevor J.; Hashim, Daniel P.; Zhan, Xiaobo; Bravo-Sanchez, Mariela; Hahm, Myung Gwan; López-Luna, Edgar; Linhardt, Robert J.; Ajayan, Pulickel M.; Navarro-Contreras, Hugo; Vidal, Miguel A.

    2012-08-01

    In an effort to combine group III-V semiconductors with carbon nanotubes, a simple solution-based technique for gallium functionalization of nitrogen-doped multi-wall carbon nanotubes has been developed. With an aqueous solution of a gallium salt (GaI3), it was possible to form covalent bonds between the Ga3+ ion and the nitrogen atoms of the doped carbon nanotubes to form a gallium nitride-carbon nanotube hybrid at room temperature. This functionalization was evaluated by x-ray photoelectron spectroscopy, energy dispersive x-ray spectroscopy, Raman spectroscopy, scanning electron microscopy and transmission electron microscopy

  11. Surface Electromagnetic Phenomena in Pristine and Doped Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Bondarev, Igor

    2007-11-01

    Recent theoretical effort towards understanding the near-field optoelectronic properties of pristine and atomically doped carbon nanotubes will be reviewed. The research is motivated by the need for the development of materials that may host quantum coherent states with long coherence lifetimes [1]. A variety of electromagnetic phenomena, such as atomic spontaneous decay dynamics [2] and atom-nanotube van der Waals coupling[3], light absorption [4,6] and entanglement of atomic states [5,6] close to carbon nanotubes, exciton-plasmon interactions on the nanotube surface [7], as well as their potential applications in modern nanophotonics and optoelectronics, will be discussed. [1] T.Brandes, Phys. Rep. 408, 315 (2005). [2] I.V.Bondarev, Ph.Lambin, Phys. Rev. B 70, 035407 (2004). [3] I.V.Bondarev, Ph.Lambin, Phys. Rev. B 72, 035451 (2005). [4] I.V.Bondarev, B.Vlahovic, Phys. Rev. B 74, 073401 (2006). [5] I.V.Bondarev, B.Vlahovic, Phys. Rev. B 75, 033402 (2007). [6] I.V.Bondarev, Journal of Electronic Materials, in print. [7] I.V.Bondarev, H.Qasmi, Physica E, in print.

  12. Nitrogen-doped mesoporous carbons for high performance supercapacitors

    NASA Astrophysics Data System (ADS)

    Wu, Kai; Liu, Qiming

    2016-08-01

    The mesoporous carbons have been synthesized by using α-D(+)-Glucose, D-Glucosamine hydrochloride or their mixture as carbon precursors and mesoporous silicas (SBA-15 or MCF) as hard templates. The as-prepared products show a large pore volume (0.59-0.97 cm3 g-1), high surface areas (352.72-1152.67 m2 g-1) and rational nitrogen content (ca. 2.5-3.9 wt.%). The results of electrochemical tests demonstrate that both heteroatom doping and suitable pore structure play a decisive role in the performance of supercapacitors. The representative sample of SBA-15 replica obtained using D-Glucosamine hydrochloride only exhibits high specific capacitance (212.8 F g-1 at 0.5 A g-1) and good cycle durability (86.1% of the initial capacitance after 2000 cycles) in 6 M KOH aqueous electrolyte, which is attributed to the contribution of double layer capacitance and pseudo-capacitance. The excellent electrochemical performance makes it a promising electrode material for supercapacitors.

  13. On the photoluminescence of as-deposited Tb-doped silicon oxides and oxynitrides fabricated by ECR-PECVD

    NASA Astrophysics Data System (ADS)

    Ramírez, J. M.; Wojcik, J.; Berencén, Y.; Mascher, P.; Garrido, B.

    2014-05-01

    In-situ doping of Tb3+ ions in silicon oxides and oxynitrides deposited by electron-cyclotron-resonance plasma enhanced chemical-vapour (ECR-PECVD) has been performed. Oxygen and nitrogen gas flow rates were changed to produce a gradual substitution of oxygen by nitrogen in the host matrix. Bright green luminescence from as-deposited layers is observed by the naked eye under daylight conditions. Tbdoped nitrogen-rich samples showed a considerable photoluminescence (PL) enhancement compared to Tb-doped silicon oxides. An optimum layer composition for efficient Tb3+ excitation under non-resonant optical pumping is obtained. The combination of a low temperature treatment with bright luminescence could be instrumental for the development of light emitting devices in other platforms with more restrictive temperature requirements.

  14. Electron transport in physically-defined double quantum dots on a highly doped silicon-on-insulator substrate

    NASA Astrophysics Data System (ADS)

    Yamaoka, Y.; Oda, S.; Kodera, T.

    2016-09-01

    We study electron transport in physically-defined silicon quantum dots (QDs) on a highly doped silicon-on-insulator (SOI) substrate. We show that the QDs can be obtained as designed without unintentional localized states caused by fluctuating dopant potentials even when a highly doped SOI substrate is used. We observe the single electron tunneling phenomena both in the single QDs (SQDs) and in the double QDs (DQDs). The charging energy in the SQDs is ˜18 meV as estimated from the Coulomb diamond. This enables us to further estimate that the diameter of the SQDs is ˜35 nm, which is consistent with the designed fabrication specifications if the voltage condition is taken into account. A change of the charged state in the DQDs is detected using the SQD as a charge sensor. A periodic honeycomb-like charge stability diagram is obtained, which indicates that we achieved the fabrication of DQDs without unintentional localized states.

  15. Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

    NASA Technical Reports Server (NTRS)

    Blacksberg, Jordana; Hoenk, Michael E.; Elliott, S. Tom; Holland, Stephen E.; Nikzad, Shouleh

    2005-01-01

    A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 (deg)C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices (CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.

  16. C- and L-band erbium-doped waveguide lasers with wafer-scale silicon nitride cavities.

    PubMed

    Purnawirman; Sun, J; Adam, T N; Leake, G; Coolbaugh, D; Bradley, J D B; Shah Hosseini, E; Watts, M R

    2013-06-01

    We report on integrated erbium-doped waveguide lasers designed for silicon photonic systems. The distributed Bragg reflector laser cavities consist of silicon nitride waveguide and grating features defined by wafer-scale immersion lithography and a top erbium-doped aluminum oxide layer deposited as the final step in the fabrication process. The resulting inverted ridge waveguide yields high optical intensity overlap with the active medium for both the 0.98 μm pump (89%) and 1.5 μm laser (87%) wavelengths with a pump-laser intensity overlap of >93%. We obtain output powers of up to 5 mW and show lasing at widely spaced wavelengths within both the C and L bands of the erbium gain spectrum (1536, 1561, and 1596 nm).

  17. Green light emission from terbium doped silicon rich silicon oxide films obtained by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Podhorodecki, A.; Zatryb, G.; Misiewicz, J.; Wojcik, J.; Wilson, P. R. J.; Mascher, P.

    2012-11-01

    The effect of silicon concentration and annealing temperature on terbium luminescence was investigated for thin silicon rich silicon oxide films. The structures were deposited by means of plasma enhanced chemical vapor deposition. The structural properties of these films were investigated by Rutherford backscattering spectrometry, transmission electron microscopy and Raman scattering. The optical properties were investigated by means of photoluminescence and photoluminescence decay spectroscopy. It was found that both the silicon concentration in the film and the annealing temperature have a strong impact on the terbium emission intensity. In this paper, we present a detailed discussion of these issues and determine the optimal silicon concentration and annealing temperature.

  18. Theoretical study of the structure and optical properties of carbon-doped rutile and anatase titanium oxides

    NASA Astrophysics Data System (ADS)

    Kamisaka, Hideyuki; Adachi, Takahisa; Yamashita, Koichi

    2005-08-01

    The structure and optical properties of carbon-doped titanium oxides, TiO2, in the rutile and anatase forms have been investigated theoretically from first principles. Two possible doping sites were studied, carbon at an oxygen site (anion doping) and carbon at a titanium site (cation doping). The calculated structures suggest that cation-doped carbon atoms form a carbonate-type structure, whereas anion-doped carbon atoms do not invoke any significant structural change. A density-of-states analysis revealed three in-gap impurity states for anion doping. The optical properties of anion-doped cells qualitatively agree with the experimentally reported visible-light absorbance values. We ascribe part of the absorption to transitions from the valence band to one of the impurity states. These transitions should be able to promote photocatalytic reactions, because electron holes in the valence band are considered to be crucial for this process. Neither in-gap impurity states nor visible-light absorbance were observed in the case of cation doping. The effect of oxygen vacancies was also investigated. Introduction of oxygen vacancies into anion-doped TiO2 populates the impurity states and thus suppresses photocatalysis. The interaction of a doped carbon atom with an oxygen vacancy at a finite spatial separation was also carried out. The possibility of either a carbon-oxygen vacancy pair or higher carbon-oxygen vacancy complex existing is discussed.

  19. Annealing group III-V compound doped silicon-germanium alloy for improved thermo-electric conversion efficiency

    NASA Technical Reports Server (NTRS)

    Vandersande, Jan W. (Inventor); Wood, Charles (Inventor); Draper, Susan L. (Inventor)

    1989-01-01

    The thermoelectric conversion efficiency of a GaP doped SiGe alloy is improved about 30 percent by annealing the alloy at a temperature above the melting point of the alloy, preferably stepwise from 1200 C to 1275 C in air to form large grains having a size over 50 microns and to form a GeGaP rich phase and a silicon rich phase containing SiP and SiO2 particles.

  20. Structural, electronic and magnetic properties of carbon doped boron nitride nanowire: Ab initio study

    NASA Astrophysics Data System (ADS)

    Jalilian, Jaafar; Kanjouri, Faramarz

    2016-11-01

    Using spin-polarized density functional theory calculations, we demonstrated that carbon doped boron nitride nanowire (C-doped BNNW) has diverse electronic and magnetic properties depending on position of carbon atoms and their percentages. Our results show that only when one carbon atom is situated on the edge of the nanowire, C-doped BNNW is transformed into half-metal. The calculated electronic structure of the C-doped BNNW suggests that doping carbon can induce localized edge states around the Fermi level, and the interaction among localized edge states leads to semiconductor to half-metal transition. Overall, the bond reconstruction causes of appearance of different electronic behavior such as semiconducting, half-metallicity, nonmagnetic metallic, and ferromagnetic metallic characters. The formation energy of the system shows that when a C atom is doped on surface boron site, system is more stable than the other positions of carbon impurity. Our calculations show that C-doped BNNW may offer unique opportunities for developing nanoscale spintronic materials.

  1. Evidence for substitutional boron in doped single-walled carbon nanotubes

    SciTech Connect

    Ayala, P.; Pichler, T.; Reppert, J.; Rao, A. M.; Grobosch, M.; Knupfer, M.

    2010-05-03

    Precise determination of acceptors in the laser ablation grown B doped single-walled carbon nanotubes (SWCNTs) has been elusive. Photoemission spectroscopy finds evidence for subpercent substitutional B in this material, which leads to superconductivity in thin film SWNT samples.

  2. The solvation study of carbon, silicon and their mixed nanotubes in water solution.

    PubMed

    Hashemi Haeri, Haleh; Ketabi, Sepideh; Hashemianzadeh, Seyed Majid

    2012-07-01

    Nanotubes are believed to open the road toward different modern fields, either technological or biological. However, the applications of nanotubes have been badly impeded for the poor solubility in water which is especially essential for studies in the presence of living cells. Therefore, water soluble samples are in demand. Herein, the outcomes of Monte Carlo simulations of different sets of multiwall nanotubes immersed in water are reported. A number of multi wall nanotube samples, comprised of pure carbon, pure silicon and several mixtures of carbon and silicon are the subjects of study. The simulations are carried out in an (N,V,T) ensemble. The purpose of this report is to look at the effects of nanotube size (diameter) and nanotube type (pure carbon, pure silicon or a mixture of carbon and silicon) variation on solubility of multiwall nanotubes in terms of number of water molecules in shell volume. It is found that the solubility of the multi wall carbon nanotube samples is size independent, whereas multi wall silicon nanotube samples solubility varies with diameter of the inner tube. The higher solubility of samples containing silicon can be attributed to the larger atomic size of silicon atom which provides more direct contact with the water molecules. The other affecting factor is the bigger inter space (the space between inner and outer tube) in the case of silicon samples. Carbon type multi wall nanotubes appeared as better candidates for transporting water molecules through a multi wall nanotube structure, while in the case of water adsorption problems it is better to use multi wall silicon nanotubes or a mixture of multi wall carbon/ silicon nanotubes. PMID:22271095

  3. The solvation study of carbon, silicon and their mixed nanotubes in water solution.

    PubMed

    Hashemi Haeri, Haleh; Ketabi, Sepideh; Hashemianzadeh, Seyed Majid

    2012-07-01

    Nanotubes are believed to open the road toward different modern fields, either technological or biological. However, the applications of nanotubes have been badly impeded for the poor solubility in water which is especially essential for studies in the presence of living cells. Therefore, water soluble samples are in demand. Herein, the outcomes of Monte Carlo simulations of different sets of multiwall nanotubes immersed in water are reported. A number of multi wall nanotube samples, comprised of pure carbon, pure silicon and several mixtures of carbon and silicon are the subjects of study. The simulations are carried out in an (N,V,T) ensemble. The purpose of this report is to look at the effects of nanotube size (diameter) and nanotube type (pure carbon, pure silicon or a mixture of carbon and silicon) variation on solubility of multiwall nanotubes in terms of number of water molecules in shell volume. It is found that the solubility of the multi wall carbon nanotube samples is size independent, whereas multi wall silicon nanotube samples solubility varies with diameter of the inner tube. The higher solubility of samples containing silicon can be attributed to the larger atomic size of silicon atom which provides more direct contact with the water molecules. The other affecting factor is the bigger inter space (the space between inner and outer tube) in the case of silicon samples. Carbon type multi wall nanotubes appeared as better candidates for transporting water molecules through a multi wall nanotube structure, while in the case of water adsorption problems it is better to use multi wall silicon nanotubes or a mixture of multi wall carbon/ silicon nanotubes.

  4. Study of silicon carbide formation by liquid silicon infiltration of porous carbon structures

    NASA Astrophysics Data System (ADS)

    Margiotta, Jesse C.

    Silicon carbide (SiC) materials are prime candidates for high temperature heat exchangers for next generation nuclear reactors due to their refractory nature and high thermal conductivity at elevated temperatures. This research has focused on demonstrating the potential of liquid silicon infiltration (LSI) for making SiC to achieve this goal. The major advantage of this method over other ceramic processing techniques is the enhanced capability of making fully dense, high purity SiC materials in complex net shapes. For successful formation of net shape SiC using LSI techniques, the carbon preform reactivity and pore structure must be controlled to allow the complete infiltration of the porous carbon structure followed by conversion of this carbon to SiC. We have established a procedure for achieving desirable carbon properties by using carbon precursors consisting of two readily available high purity organic materials, crystalline cellulose and phenolic resin. Phenolic resin yields a glassy carbon with low reactivity and porosity, and cellulose carbon is highly reactive and porous. By adjusting the ratio of these two materials in the precursor mixtures, the properties of the carbons produced can be controlled. We have identified the most favorable carbon precursor composition to be a cellulose:resin mass ratio of 6:4 for LSI formation of SiC. The optimum reaction conditions are a temperature of 1800°C, a pressure of 0.5 Torr of argon, and a time of 120 minutes. The fully dense net shape SiC material produced has a density of 2.96 g cm-3 (about 92% of pure SiC) and a SiC volume fraction of over 0.82. Kinetics of the LSI SiC formation process were studied by optical microscopy and quantitative digital image analysis. This study identified six reaction stages and provided important understanding of the process. Such knowledge can be used to further refine the LSI technique. Although the thermal conductivity of pure SiC at elevated temperatures is very high, thermal

  5. Synthesis and catalytic activity of heteroatom doped metal-free single-wall carbon nanohorns.

    PubMed

    Wu, Xiaohui; Cui, Longbin; Tang, Pei; Hu, Ziqi; Ma, Ding; Shi, Zujin

    2016-04-01

    Boron-, phosphorus-, nitrogen-doped and co-doped single-wall carbon nanohorns were produced using an arc-vaporization method. These as-prepared doped materials consist of uniform isolated nanohorns and exhibit greatly enhanced catalytic capabilities in the reduction reaction of nitrobenzene and a volcano-shape trend between their activities with a B dopant content is found. Moreover, the B-C3 and P-C3 species in doped nanohorns might act as the acidic and basic sites to promote this reaction. PMID:27006980

  6. Influence of the ion synthesis and ion doping regimes on the effect of sensitization of erbium emission by silicon nanoclusters in silicon dioxide films

    NASA Astrophysics Data System (ADS)

    Korolev, D. S.; Kostyuk, A. B.; Belov, A. I.; Mikhaylov, A. N.; Dudin, Yu. A.; Bobrov, A. I.; Malekhonova, N. V.; Pavlov, D. A.; Tetelbaum, D. I.

    2013-11-01

    The photoluminescence spectra of erbium centers in SiO2 films with ion-synthesized silicon nanoclusters under nonresonant excitation were investigated. Erbium was introduced into thermal SiO2 films by ion implantation. The dependences of photoluminescence intensity on the dose, the order of ion implantation of Si and Er, the annealing temperature, and additional Ar+ and P+ ion irradiation regimes, i.e., factors determining the influence of radiation damage and doping on sensitization of erbium luminescence by silicon nanoclusters, were determined. It was found that the sensitization effect and its amplification due to doping with phosphorus are most pronounced under the conditions where nanoclusters are amorphous. The quenching of photoluminescence due to radiation damage in this case manifests itself to a lesser extent than for crystalline nanoclusters. The role of various factors in the observed regularities was discussed in the framework of the existing concepts of the mechanisms of light emission and energy exchange in the system of silicon nanoclusters and erbium centers.

  7. Photocatalytic activity of Cr-doped TiO2 nanoparticles deposited on porous multicrystalline silicon films

    PubMed Central

    2014-01-01

    This work deals with the deposition of Cr-doped TiO2 thin films on porous silicon (PS) prepared from electrochemical anodization of multicrystalline (mc-Si) Si wafers. The effect of Cr doping on the properties of the TiO2-Cr/PS/Si samples has been investigated by means of X-ray diffraction (XRD), atomic force microcopy (AFM), photoluminescence, lifetime, and laser beam-induced current (LBIC) measurements. The photocatalytic activity is carried out on TiO2-Cr/PS/Si samples. It was found that the TiO2-Cr/PS/mc-Si type structure degrades an organic pollutant (amido black) under ultraviolet (UV) light. A noticeable degradation of the pollutant is obtained for a Cr doping of 2 at. %. This result is discussed in light of LBIC and photoluminescence measurements. PMID:25313302

  8. Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell

    NASA Technical Reports Server (NTRS)

    Ho, C.-T.

    1982-01-01

    The results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.

  9. Photocatalytic activity of Cr-doped TiO2 nanoparticles deposited on porous multicrystalline silicon films.

    PubMed

    Hajjaji, Anouar; Trabelsi, Khaled; Atyaoui, Atef; Gaidi, Mounir; Bousselmi, Latifa; Bessais, Brahim; El Khakani, My Ali

    2014-01-01

    This work deals with the deposition of Cr-doped TiO2 thin films on porous silicon (PS) prepared from electrochemical anodization of multicrystalline (mc-Si) Si wafers. The effect of Cr doping on the properties of the TiO2-Cr/PS/Si samples has been investigated by means of X-ray diffraction (XRD), atomic force microcopy (AFM), photoluminescence, lifetime, and laser beam-induced current (LBIC) measurements. The photocatalytic activity is carried out on TiO2-Cr/PS/Si samples. It was found that the TiO2-Cr/PS/mc-Si type structure degrades an organic pollutant (amido black) under ultraviolet (UV) light. A noticeable degradation of the pollutant is obtained for a Cr doping of 2 at. %. This result is discussed in light of LBIC and photoluminescence measurements.

  10. Study on the impact of silicon doping level on the trench profile using metal-assisted chemical etching

    NASA Astrophysics Data System (ADS)

    Cao, Zhe; Huang, Qiyu; Zhao, Chuanrui; Zhang, Qing

    2016-10-01

    Metal-assisted chemical etching (MACE) has been used as a promising alternative method to fabricate micro/nano-structures on silicon substrates inexpensively. In this paper, profiles of deep trenches on silicon substrates, with different doping levels, fabricated by MACE were studied. A layer of interconnected gold islands was first deposited onto the silicon substrate as catalyst. Electrochemical etching was then performed in a hydrofluoric acid (HF) and hydrogen peroxide (H2O2) mixture solution with different HF-to-H2O2 ratio ρ (ρ = [HF]/([HF] + [H2O2])). Vertical deep trenches were fabricated successfully by using this method. It was observed that even under identical experimental condition, sidewalls with various tilting angles and different morphology could still form on silicon substrates with different resistivity. This possibly because with different resistivity silicon substrate, the gradient of holes in it greatly changed, and so did the final morphology. As a result, the tilting angle of etched trench sidewall can be tuned from 6° to 96° using silicon substrates with different resistivity and etchants with different ρ. By applying the angle-tuning technique revealed in this study, high aspect ratio patterns with vertical sidewalls could be fabricated and three-dimensional complex structures could be designed and realized in the future. [Figure not available: see fulltext.

  11. Structural, electronic properties, and quantum capacitance of B, N and P-doped armchair carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Mousavi-Khoshdel, S. Morteza; Jahanbakhsh-bonab, Parisa; Targholi, Ehsan

    2016-10-01

    Using DFT calculations, we study the structural parameters, electronic properties and quantum capacitance of N, B, and P-doped armchair carbon nanotubes (CNTs). Fermi level shifts towards conduction band and valence band in N- and B-doped CNTs, respectively. While in the case of P atom, despite having an extra valence electron than carbon, there is no shift in Fermi level. The results revealed from a symmetric capacitance enhancement in P-doped CNT and an asymmetric capacitance enhancement in B and N-doped CNTs. The greatest amount of quantum capacitance of N-doped (6, 6) CNT could be achieved at the concentration range of 0.1-0.15.

  12. Preparation and Characterization of Iodine-doped Multi-wall Carbon Nanotubes

    SciTech Connect

    Zainal, N. F. A.; Kudin, T. I. Tunku; Azira, A.; Ahmed, A. Z.; Abdullah, S.; Rusop, M.

    2008-05-20

    Multi-wall carbon nanotubes (MWCNTs) were synthesized by thermal chemical vapor deposition (CVD) and were intercalated with iodine at several different temperatures. Iodine doping was achieved by immersing the nanotubes in molten iodine. The sample produced was characterized by means of infrared IR as a point to the presence of covalent C-I bonds in the sample with retention of the sp{sup 2}-hybridizated carbon atoms. For all samples doped at different temperatures, the C-I bonding happen to occur based on IR spectra which was indicated by peaks around 600-650 cm{sup -1}. X-ray diffraction (XRD) characterization was used to study on the crystallinity of the undoped and iodine-doped MWCNTs. It was shown that, iodine-doping of the MWCNTs gives significant changes in the XRD spectra compared to the undoped MWCNTs. With various doping temperature, the XRD spectra shows the different crystallinity.

  13. Influences of p- and n-Doped Czochralski Base Material on the Performance of Silicon Based Heterojunction Solar Cells

    NASA Astrophysics Data System (ADS)

    Ziegler, Johannes; Montesdeoca-Santana, Amada; Platt, Dominik; Hohage, Stefan; Guerrero-Lemus, Ricardo; Borchert, Dietmar

    2012-10-01

    In this work we present a cell process for amorphous crystalline silicon heterojunction (SHJ) solar cells based on process steps well known in the photovoltaic industry. All amorphous silicon layers are deposited by plasma enhanced chemical vapor deposition (PECVD) in a one chamber direct plasma reactor working at a radio frequency of 13.56 MHz. The main focus of this work is to study the influence of p- and n-doped Czochralski (Cz) silicon base material with different surface morphology on the cell results of amorphous crystalline SHJ solar cells with intrinsic thin layers. Open circuit voltages Voc of up to 700 mV are obtained on n-type Cz based SHJ cells (area 100 cm2) with rough surfaces. On p-type Cz based SHJ cells open circuit voltages were limited by the minority carrier bulk lifetime of the used base material.

  14. Rectifying Properties of a Nitrogen/Boron-Doped Capped-Carbon-Nanotube-Based Molecular Junction

    NASA Astrophysics Data System (ADS)

    Zhao, Peng; Liu, De-Sheng; Zhang, Ying; Wang, Pei-Ji; Zhang, Zhong

    2011-04-01

    Based on the non-equilibrium Green's function method and first-principles density functional theory calculations, we investigate the electronic transport properties of a nitrogen/boron-doped capped-single-walled carbon-nanotube-based molecular junction. Obvious rectifying behavior is observed and it is strongly dependent on the doping site. The best rectifying performance can be carried out when the nitrogen/boron atom dopes at a carbon site in the second layer. Moreover, the rectifying performance can be further improved by adjusting the distance between the C60 nanotube caps.

  15. Effects of nitrogen substitutional doping on the electronic transport of carbon nanotube

    NASA Astrophysics Data System (ADS)

    Wei, Jianwei; Hu, Huifang; Zeng, Hui; Zhou, Zhipeng; Yang, Weiwei; Peng, Ping

    2008-01-01

    We have studied the effects of nitrogen substitutional doping on the transport properties of single-wall carbon nanotube (8, 0) using density functional theory and non-equilibrium Green's functions. The results reveal that the nanotube changes from the semiconducting to the quasi-metallic state because of the dopants, and their structures strongly dominate their electrical properties. Our calculations indicate that transport properties of the doped nanotubes are sensitive not only to the concentration of nitrogen atoms but also to their distribution. The doping effects on the electronic transport of the carbon nanotube are discussed.

  16. Effect of substitutional carbon-doping in BNNTs on HF adsorption: DFT study

    NASA Astrophysics Data System (ADS)

    Kaur, Jasleen; Singhal, Sonal; Goel, Neetu

    2014-11-01

    We employed density functional calculations to investigate the adsorption behavior of HF gas on the side walls of pure and carbon-doped boron nitride nanotubes (BNNTs). The HF adsorption over the pure BNNT opens a door for its functionalization without causing significant changes in its electronic properties. The substitutional doping of carbon atom on the BNNT considerably enhances its affinity towards HF where the effect of the dopant concentration plays a vital role. The change in electronic properties of the doped BNNT on HF adsorption is significant enough to consider it a potential sensor for HF detection.

  17. Characteristics of droplets ejected from liquid glycerol doped with carbon in laser ablation propulsion

    NASA Astrophysics Data System (ADS)

    Zhi-Yuan, Zheng; Si-Qi, Zhang; Tian, Liang; Lu, Gao; Hua, Gao; Zi-Li, Zhang

    2016-04-01

    The characteristics of droplets ejected from liquid glycerol doped with carbon are investigated in laser ablation propulsion. Results show that carbon content has an effect on both the coupling coefficient and the specific impulse. The doped-carbon moves the laser focal position from the glycerol interior to the surface. This results in a less consumed glycerol and a high specific impulse. An optimal propulsion can be realized by varying carbon content in glycerol. Project supported by the National Natural Science Foundation of China (Grant No. 10905049) and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 53200859165 and 2562010050).

  18. Electronic transport and mechanical properties of phosphorus and phosphorus-nitrogen doped carbon nanotubes

    SciTech Connect

    Sumpter, Bobby G; Charlier, Jean Christophe; Terrones Maldonado, Mauricio; Meunier, Vincent; Terrones Maldonado, Humberto; Cruz Silva, Eduardo; Lopez, Florentino; Munoz-Sandoval, Emilio

    2009-01-01

    We present a density functional theory study of the electronic structure, quantum transport and mechanical properties of recently synthesized phosphorus (P) and phosphorus-nitrogen (PN) doped single-walled carbon nanotubes. The results demonstrate that substitutional P and PN doping creates localized electronic states that modify the electron transport properties by acting as scattering centers. For low doping concentrations (1 doping site per ~200 atoms), the quantum conductance for metallic nanotubes is found to be only slightly reduced. The substitutional doping also alters the mechanical strength, leading to a 50% reduction in the elongation upon fracture, while Young s modulus remains approximately unchanged. Overall, the PN- and P-doped nanotubes display promising properties for components in composite materials and, in particular, for fast response and ultra sensitive sensors operating at the molecular level.

  19. Detailed analysis of the Raman response of n -doped double-wall carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Rauf, H.; Pichler, T.; Pfeiffer, R.; Simon, F.; Kuzmany, H.; Popov, V. N.

    2006-12-01

    We report on detailed studies of the n -type doping dependence of the Raman response of double-wall carbon nanotubes using potassium intercalation. The charge transfer is monitored by a shift of the G line. Upon doping the G line shifts to higher frequencies for the outer and to lower frequencies for the inner tubes. This is explained by different Coulomb interactions for the inner and outer tubes. The response of the radial breathing mode upon doping shows that a charge transfer from the dopant happens predominantly to the outer tubes at low doping. Charge transfer to the inner tubes occurs at higher doping levels. The previously observed cluster behavior of the inner tube RBM response allows a detailed analysis of the dependence of the inner tube doping from specific inner tube-outer tube configurations.

  20. Nitrogen-doped carbon nanotubes as a highly active metal-free catalyst for selective oxidation.

    PubMed

    Chizari, Kambiz; Deneuve, Adrien; Ersen, Ovidiu; Florea, Ileana; Liu, Yu; Edouard, David; Janowska, Izabela; Begin, Dominique; Pham-Huu, Cuong

    2012-01-01

    Catalytic reactions are generally carried out on supported metals or oxides, which act as an active phase and require impregnation and thermal treatment steps. During tests, the metal or oxide nanoparticles could be further sintered, which would induces deactivation. Direct incorporation of the active phase into the matrix of a support could be an elegant alternative to prevent catalyst deactivation. Here, we report that nitrogen-doped carbon nanotubes (N-CNTs) can be efficiently employed as a metal-free catalyst for oxidative reactions that allow the selective transformation of the harmful, gaseous H(2)S into solid sulfur. The catalyst exhibits a high stability during the test at high space velocity. The macroscopic shaping of the catalyst on the silicon carbide foam also increases its catalytic activity by improving the contact between the reactants and the catalyst. Such macroscopic shaping allows the avoidance of problems linked with transport and handling of nanoscopic materials and also reduces the pressure drop across the catalyst bed to a large extent.

  1. Nitrogen-doped porous carbon from Camellia oleifera shells with enhanced electrochemical performance.

    PubMed

    Zhai, Yunbo; Xu, Bibo; Zhu, Yun; Qing, Renpeng; Peng, Chuan; Wang, Tengfei; Li, Caiting; Zeng, Guangming

    2016-04-01

    Nitrogen doped porous activated carbon was prepared by annealing treatment of Camellia oleifera shell activated carbon under NH3. We found that nitrogen content of activated carbon up to 10.43 at.% when annealed in NH3 at 800 °C. At 600 °C or above, the N-doped carbon further reacts with NH3, leads to a low surface area down to 458 m(2)/g and low graphitization degree. X-ray photoelectron spectroscope (XPS) analysis indicated that the nitrogen functional groups on the nitrogen-doped activated carbons (NACs) were mostly in the form of pyridinic nitrogen. We discovered that the oxygen groups and carbon atoms at the defect and edge sites of graphene play an important role in the reaction, leading to nitrogen atoms incorporated into the lattice of carbon. When temperatures were lower than 600 °C the nitrogen atoms displaced oxygen groups and formed nitrogen function groups, and when temperatures were higher than 600 °C and ~4 at.% carbon atoms and part of oxygen function groups reacted with NH3. When compared to pure activated carbon, the nitrogen doped activated carbon shows nearly four times the capacitance (191 vs 51 F/g).

  2. Fluorescently tuned nitrogen-doped carbon dots from carbon source with different content of carboxyl groups

    SciTech Connect

    Wang, Hao; Wang, Yun; Dai, Xiao; Zou, Guifu E-mail: zouguifu@suda.edu.cn; Gao, Peng; Zhang, Ke-Qin E-mail: zouguifu@suda.edu.cn; Du, Dezhuang; Guo, Jun

    2015-08-01

    In this study, fluorescent nitrogen-doped carbon dots (NCDs) were tuned via varying the sources with different number of carboxyl groups. Owing to the interaction between amino and carboxyl, more amino groups conjugate the surface of the NCDs by the source with more carboxyl groups. Fluorescent NCDs were tuned via varying the sources with different content of carboxyl groups. Correspondingly, the nitrogen content, fluorescence quantum yields and lifetime of NCDs increases with the content of carboxyl groups from the source. Furthermore, cytotoxicity assay and cell imaging test indicate that the resultant NCDs possess low cytotoxicity and excellent biocompatibility.

  3. Powder containing 2H-type silicon carbide produced by reacting silicon dioxide and carbon powder in nitrogen atmosphere in the presence of aluminum

    NASA Technical Reports Server (NTRS)

    Kuramoto, N.; Takiguchi, H.

    1984-01-01

    The production of powder which contains silicon carbide consisting of 40% of 2H-type silicon carbide, beta type silicon carbide and less than 3% of nitrogen is discussed. The reaction temperature to produce the powder containing 40% of 2H-type silicon carbide is set at above 1550 degrees C in an atmosphere of aluminum or aluminum compounds and nitrogen gas or an antioxidation atmosphere containing nitrogen gas. The mixture ratio of silicon dioxide and carbon powder is 0.55 - 1:2.0 and the contents of aluminum or aluminum compounds within silicon dioxide is less than 3% in weight.

  4. Interior phase transformations and mass-radius relationships of silicon-carbon planets

    SciTech Connect

    Wilson, Hugh F.; Militzer, Burkhard

    2014-09-20

    Planets such as 55 Cancri e orbiting stars with a high carbon-to-oxygen ratio may consist primarily of silicon and carbon, with successive layers of carbon, silicon carbide, and iron. The behavior of silicon-carbon materials at the extreme pressures prevalent in planetary interiors, however, has not yet been sufficiently understood. In this work, we use simulations based on density functional theory to determine high-pressure phase transitions in the silicon-carbon system, including the prediction of new stable compounds with Si{sub 2}C and SiC{sub 2} stoichiometry at high pressures. We compute equations of state for these silicon-carbon compounds as a function of pressure, and hence derive interior structural models and mass-radius relationships for planets composed of silicon and carbon. Notably, we predict a substantially smaller radius for SiC planets than in previous models, and find that mass radius relationships for SiC planets are indistinguishable from those of silicate planets. We also compute a new equation of state for iron. We rederive interior models for 55 Cancri e and are able to place more stringent restrictions on its composition.

  5. Atomically smooth p-doped silicon nanowires catalyzed by aluminum at low temperature.

    PubMed

    Moutanabbir, Oussama; Senz, Stephan; Scholz, Roland; Alexe, Marin; Kim, Yunseok; Pippel, Eckhard; Wang, Yewu; Wiethoff, Christian; Nabbefeld, Tobias; Meyer zu Heringdorf, Frank; Horn-von Hoegen, Michael

    2011-02-22

    Silicon nanowires (SiNWs) are powerful nanotechnological building blocks. To date, a variety of metals have been used to synthesize high-density epitaxial SiNWs through metal-catalyzed vapor phase epitaxy. Understanding the impact of the catalyst on the intrinsic properties of SiNWs is critical for precise manipulation of the emerging SiNW-based devices. Here we demonstrate that SiNWs synthesized at low-temperature by ultrahigh vacuum chemical vapor deposition using Al as a catalyst present distinct morphological properties. In particular, these nanowires are atomically smooth in contrast to rough {112}-type sidewalls characteristic of the intensively investigated Au-catalyzed SiNWs. We show that the stabilizing effect of Al plays the key role in the observed nanowire surface morphology. In fact, unlike Au which induces (111) and (113) facets on the nanowire sidewall surface, Al revokes the reconstruction along the [112] direction leading to equivalent adjacent step edges and flat surfaces. Our finding sets the lower limit of the Al surface density on the nanowire sidewalls at ∼2 atom/nm(2). Additionally, despite using temperatures of ca. 110-170 K below the eutectic point, we found that the incorporation of Al into the growing nanowires is sufficient to induce an effective p-type doping of SiNWs. These results demonstrate that the catalyst plays a crucial role is shaping the structural and electrical properties of SiNWs.

  6. Hydrogen passivation of titanium impurities in silicon: Effect of doping conditions

    NASA Astrophysics Data System (ADS)

    Santos, P.; Coutinho, J.; Torres, V. J. B.; Rayson, M. J.; Briddon, P. R.

    2014-07-01

    While the contamination of solar silicon by fast diffusing transition metals can be now limited through gettering, much attention has been drawn to the slow diffusing species, especially the early 3d and 4d elements. To some extent, hydrogen passivation has been successful in healing many deep centers, including transition metals in Si. Recent deep-level transient spectroscopy (DLTS) measurements concerning hydrogen passivation of Ti revealed the existence of at least four electrical levels related to Ti i H n in the upper-half of the gap. These findings challenge the existing models regarding both the current level assignment as well as the structure/species involved in the defects. We revisit this problem by means of density functional calculations and find that progressive hydrogenation of interstitial Ti is thermodynamically stable in intrinsic and n-doped Si. Full passivation may not be possible to attain in p-type Si as Ti i H 3 and Ti i H 4 are metastable against dissociation and release of bond-centered protons. All DLTS electron traps are assigned, namely, E40' to Ti i H ( - / 0 ), E170' to Ti i H 3 ( 0 / + ), E(270) to Ti i H 2 ( 0 / + ), and E170 to Ti i H ( 0 / + ) transitions. Ti i H 4 is confirmed to be electrically inert.

  7. IRAC test report. Gallium doped silicon band 2: Read noise and dark current

    NASA Technical Reports Server (NTRS)

    Lamb, Gerald; Shu, Peter; Mather, John; Ewin, Audrey; Bowser, Jeffrey

    1987-01-01

    A direct readout infrared detector array, a candidate for the Space Infrared Telescope Facility (SIRTF) Infrared Array Camera (IRAC), has been tested. The array has a detector surface of gallium doped silicon, bump bonded to a 58x62 pixel MOSFET multiplexer on a separate chip. Although this chip and system do not meet all the SIRTF requirements, the critically important read noise is within a factor of 3 of the requirement. Significant accomplishments of this study include: (1) development of a low noise correlated double sampling readout system with a readout noise of 127 to 164 electrons (based on the detector integrator capacitance of 0.1 pF); (2) measurement of the readout noise of the detector itself, ranging from 123 to 214 electrons with bias only (best to worst pixel), and 256 to 424 electrons with full clocking in normal operation at 5.4 K where dark current is small. Thirty percent smaller read noises are obtained at a temperature of 15K; (3) measurement of the detector response versus integration time, showing significant nonlinear behavior for large signals, well below the saturation level; and (4) development of a custom computer interface and suitable software for collection, analysis and display of data.

  8. Interaction of copper impurity with radiation defects in silicon doped with boron

    SciTech Connect

    Yarykin, N. A.; Weber, J.

    2010-08-15

    The spectrum of deep levels formed in boron-doped Czochralski-grown silicon single crystals as a result of interaction of radiation defects with copper impurity is studied. It is shown that, irrespective of the order of introduction of defects (both in the case of low-temperature copper diffusion into crystals preliminarily irradiated with electrons and in the case of irradiation of the samples contaminated with copper), the same set of deep levels appears. In addition to conventional radiation defects, three types of levels have been detected in the band gap of copper-containing crystals. These levels include the level E{sub v} + 0.49 eV (already mentioned in available publications), the level E{sub v} + 0.51 eV (previously not related to copper), and a level close to the donor level of a vacancy. Based on the analysis of concentration profiles, the interstitial carbonoxygen pair is excluded from possible precursors of the copper-containing center with level E{sub v} + 0.49 eV.

  9. Ultrafast spontaneous emission of copper-doped silicon enhanced by an optical nanocavity

    PubMed Central

    SUMIKURA, HISASHI; KURAMOCHI, EIICHI; TANIYAMA, HIDEAKI; NOTOMI, MASAYA

    2014-01-01

    Dopants in silicon (Si) have attracted attention in the fields of photonics and quantum optics. However, the optical characteristics are limited by the small spontaneous emission rate of dopants in Si. This study demonstrates a large increase in the spontaneous emission rate of copper isoelectronic centres (Cu-IECs) doped into Si photonic crystal nanocavities. In a cavity with a quality factor (Q) of ~16,000, the photoluminescence (PL) lifetime of the Cu-IECs is 1.1 ns, which is 30 times shorter than the lifetime of a sample without a cavity. The PL decay rate is increased in proportion to Q/Vc (Vc is the cavity mode volume), which indicates the Purcell effect. This is the first demonstration of a cavity-enhanced ultrafast spontaneous emission from dopants in Si, and it may lead to the development of fast and efficient Si light emitters and Si quantum optical devices based on dopants with efficient optical access. PMID:24853336

  10. Chemical sensors using coated or doped carbon nanotube networks

    NASA Technical Reports Server (NTRS)

    Li, Jing (Inventor); Meyyappan, Meyya (Inventor)

    2010-01-01

    Methods for using modified single wall carbon nanotubes ("SWCNTs") to detect presence and/or concentration of a gas component, such as a halogen (e.g., Cl.sub.2), hydrogen halides (e.g., HCl), a hydrocarbon (e.g., C.sub.nH.sub.2n+2), an alcohol, an aldehyde or a ketone, to which an unmodified SWCNT is substantially non-reactive. In a first embodiment, a connected network of SWCNTs is coated with a selected polymer, such as chlorosulfonated polyethylene, hydroxypropyl cellulose, polystyrene and/or polyvinylalcohol, and change in an electrical parameter or response value (e.g., conductance, current, voltage difference or resistance) of the coated versus uncoated SWCNT networks is analyzed. In a second embodiment, the network is doped with a transition element, such as Pd, Pt, Rh, Ir, Ru, Os and/or Au, and change in an electrical parameter value is again analyzed. The parameter change value depends monotonically, not necessarily linearly, upon concentration of the gas component. Two general algorithms are presented for estimating concentration value(s), or upper or lower concentration bounds on such values, from measured differences of response values.

  11. Doping modulated carbon nanotube synapstors for a spike neuromorphic module.

    PubMed

    Shen, Alex Ming; Kim, Kyunghyun; Tudor, Andrew; Lee, Dongwon; Chen, Yong

    2015-04-01

    A doping-modulated carbon nanotube (CNT) electronic device, called a "synapstor," emulates the function of a biological synapse. The CNT synapstor has a field-effect transistor structure with a random CNT network as its channel. An aluminium oxide (Al2 O3 ) film is deposited over half of the CNT channel in the synapstor, converting the covered part of the CNT from p-type to n-type, forming a p-n junction in the CNT channel and increasing the Schottky barrier between the n-type CNT and its metal contact. This scheme significantly improves the postsynaptic current (PSC) from the synapstor, extends the tuning range of the plasticity, and reduces the power consumption of the CNT synapstor. A spike neuromorphic module is fabricated by integrating the CNT synapstors with a Si-based "soma" circuit. Spike parallel processing, memory, and plasticity functions of the module are demonstrated. The module could potentially be integrated and scaled up to emulate a biological neural network with parallel high-speed signal processing, low power consumption, memory, and learning capabilities. PMID:25423906

  12. PAF-derived nitrogen-doped 3D Carbon Materials for Efficient Energy Conversion and Storage.

    PubMed

    Xiang, Zhonghua; Wang, Dan; Xue, Yuhua; Dai, Liming; Chen, Jian-Feng; Cao, Dapeng

    2015-01-01

    Owing to the shortage of the traditional fossil fuels caused by fast consumption, it is an urgent task to develop the renewable and clean energy sources. Thus, advanced technologies for both energy conversion (e.g., solar cells and fuel cells) and storage (e.g., supercapacitors and batteries) are being studied extensively. In this work, we use porous aromatic framework (PAF) as precursor to produce nitrogen-doped 3D carbon materials, i.e., N-PAF-Carbon, by exposing NH3 media. The "graphitic" and "pyridinic" N species, large surface area, and similar pore size as electrolyte ions endow the nitrogen-doped PAF-Carbon with outstanding electronic performance. Our results suggest the N-doping enhance not only the ORR electronic catalysis but also the supercapacitive performance. Actually, the N-PAF-Carbon obtains ~70 mV half-wave potential enhancement and 80% increase as to the limiting current after N doping. Moreover, the N-PAF-Carbon displays free from the CO and methanol crossover effect and better long-term durability compared with the commercial Pt/C benchmark. Moreover, N-PAF-Carbon also possesses large capacitance (385 F g(-1)) and excellent performance stability without any loss in capacitance after 9000 charge-discharge cycles. These results clearly suggest that PAF-derived N-doped carbon material is promising metal-free ORR catalyst for fuel cells and capacitor electrode materials.

  13. PAF-derived nitrogen-doped 3D Carbon Materials for Efficient Energy Conversion and Storage.

    PubMed

    Xiang, Zhonghua; Wang, Dan; Xue, Yuhua; Dai, Liming; Chen, Jian-Feng; Cao, Dapeng

    2015-01-01

    Owing to the shortage of the traditional fossil fuels caused by fast consumption, it is an urgent task to develop the renewable and clean energy sources. Thus, advanced technologies for both energy conversion (e.g., solar cells and fuel cells) and storage (e.g., supercapacitors and batteries) are being studied extensively. In this work, we use porous aromatic framework (PAF) as precursor to produce nitrogen-doped 3D carbon materials, i.e., N-PAF-Carbon, by exposing NH3 media. The "graphitic" and "pyridinic" N species, large surface area, and similar pore size as electrolyte ions endow the nitrogen-doped PAF-Carbon with outstanding electronic performance. Our results suggest the N-doping enhance not only the ORR electronic catalysis but also the supercapacitive performance. Actually, the N-PAF-Carbon obtains ~70 mV half-wave potential enhancement and 80% increase as to the limiting current after N doping. Moreover, the N-PAF-Carbon displays free from the CO and methanol crossover effect and better long-term durability compared with the commercial Pt/C benchmark. Moreover, N-PAF-Carbon also possesses large capacitance (385 F g(-1)) and excellent performance stability without any loss in capacitance after 9000 charge-discharge cycles. These results clearly suggest that PAF-derived N-doped carbon material is promising metal-free ORR catalyst for fuel cells and capacitor electrode materials. PMID:26045229

  14. Steering the efficiency of carbon nanotube-silicon photovoltaic cells by acid vapor exposure: a real-time spectroscopic tracking.

    PubMed

    Pintossi, C; Pagliara, S; Drera, G; De Nicola, F; Castrucci, P; De Crescenzi, M; Crivellari, M; Boscardin, M; Sangaletti, L

    2015-05-13

    Hybrid carbon nanotube-silicon (CNT-Si) junctions have been investigated by angle resolved photoemission spectroscopy (AR-XPS) with the aim to clarify the effects of a nonstoichiometric silicon oxide buried interface on the overall cell efficiency. A complex silicon oxide interface has been clearly identified and its origin and role in the heterojunction have been probed by exposing the cells to hydrofluoric (HF) and nitric (HNO3) acid. Real-time monitoring of the cell efficiencies during the steps following acid exposure (up to 1 week after etching) revealed a correlation between the thickness and chemical state of the oxide layer and the cell efficiencies. By matching the AR-XPS and Raman spectroscopy with the electrical response data it has been possible to discriminate the effects on the cell efficiency of the buried SiO(x) interface from those related to CNT acid doping. The overall cell behavior recorded for different thicknesses of the SiO(x) interface indicates that the buried oxide layer is likely acting as a passivating/inversion layer in a metal-insulator-semiconductor junction.

  15. Realization of radial p-n junction silicon nanowire solar cell based on low-temperature and shallow phosphorus doping.

    PubMed

    Dong, Gangqiang; Liu, Fengzhen; Liu, Jing; Zhang, Hailong; Zhu, Meifang

    2013-01-01

    A radial p-n junction solar cell based on vertically free-standing silicon nanowire (SiNW) array is realized using a novel low-temperature and shallow phosphorus doping technique. The SiNW arrays with excellent light trapping property were fabricated by metal-assisted chemical etching technique. The shallow phosphorus doping process was carried out in a hot wire chemical vapor disposition chamber with a low substrate temperature of 250°C and H2-diluted PH3 as the doping gas. Auger electron spectroscopy and Hall effect measurements prove the formation of a shallow p-n junction with P atom surface concentration of above 1020 cm-3 and a junction depth of less than 10 nm. A short circuit current density of 37.13 mA/cm2 is achieved for the radial p-n junction SiNW solar cell, which is enhanced by 7.75% compared with the axial p-n junction SiNW solar cell. The quantum efficiency spectra show that radial transport based on the shallow phosphorus doping of SiNW array improves the carrier collection property and then enhances the blue wavelength region response. The novel shallow doping technique provides great potential in the fabrication of high-efficiency SiNW solar cells.

  16. Realization of radial p-n junction silicon nanowire solar cell based on low-temperature and shallow phosphorus doping

    PubMed Central

    2013-01-01

    A radial p-n junction solar cell based on vertically free-standing silicon nanowire (SiNW) array is realized using a novel low-temperature and shallow phosphorus doping technique. The SiNW arrays with excellent light trapping property were fabricated by metal-assisted chemical etching technique. The shallow phosphorus doping process was carried out in a hot wire chemical vapor disposition chamber with a low substrate temperature of 250°C and H2-diluted PH3 as the doping gas. Auger electron spectroscopy and Hall effect measurements prove the formation of a shallow p-n junction with P atom surface concentration of above 1020 cm−3 and a junction depth of less than 10 nm. A short circuit current density of 37.13 mA/cm2 is achieved for the radial p-n junction SiNW solar cell, which is enhanced by 7.75% compared with the axial p-n junction SiNW solar cell. The quantum efficiency spectra show that radial transport based on the shallow phosphorus doping of SiNW array improves the carrier collection property and then enhances the blue wavelength region response. The novel shallow doping technique provides great potential in the fabrication of high-efficiency SiNW solar cells. PMID:24369781

  17. Photovoltaic devices based on high density boron-doped single-walled carbon nanotube/n-Si heterojunctions

    NASA Astrophysics Data System (ADS)

    Saini, Viney; Li, Zhongrui; Bourdo, Shawn; Kunets, Vasyl P.; Trigwell, Steven; Couraud, Arthur; Rioux, Julien; Boyer, Cyril; Nteziyaremye, Valens; Dervishi, Enkeleda; Biris, Alexandru R.; Salamo, Gregory J.; Viswanathan, Tito; Biris, Alexandru S.

    2011-01-01

    A simple and easily processible photovoltaic device has been developed based on boron-doped single-walled carbon nanotubes (B-SWNTs) and n-type silicon (n-Si) heterojunctions. The SWNTs were substitutionally doped with boron atoms by thermal annealing, in the presence of B2O3. The samples used for these studies were characterized by Raman spectroscopy, thermal gravimetric analysis, transmission electron microscopy, and x-ray photoelectron spectroscopy. The fully functional solar cell devices were fabricated by airbrush deposition that generated uniform B-SWNT films on top of the n-Si substrates. The carbon nanotube films acted as exciton-generation sites, charge collection, and transportation while the heterojunctions formed between B-SWNTs and n-Si acted as charge dissociation centers. The current-voltage characteristics in the absence of light and under illumination, as well as optical transmittance spectrum are reported here. It should be noted that the device fabrication process can be made amenable to scalability by depositing direct and uniform films using airbrushing, inkjet printing, or spin-coating techniques.

  18. Synthesis, characterizations, and applications of carbon nanotubes and silicon nanowires

    NASA Astrophysics Data System (ADS)

    Xiong, Guangyong

    Carbon nanotubes (CNTs) have received great attention because of their unique structure and promising applications in microelectronic devices such as field electron emitters. Silicon nanowires (SiNWs) are also very popular because Si is a well established electronic material. This thesis will present my effort on synthesis, characterizations, and applications of CNTs and SiNWs by thermal chemical vapor deposition (CVD) method. For CNTs growth, block copolymer micelles were used as a template to create large area arrays of metal nanoclusters as catalysts for patterned arrays, and Fe/Al/Fe sandwich film on single crystal magnesium oxide (MgO) substrate was used as the catalyst for growth of long length aligned CNTs by CVD. The factors that affect the structure and length of CNTs have been investigated. CNTs were also grown on etched Si substrate by PECVD method. Continuous dropwise condensation was achieved on a biomimetic two-tier texture with short CNTs deposited on micromachined pillars. Superhydrophobic condensation model was studied. For SiNWs growth, hydrogen gold tetrachloride was uniformly mixed into the salt and decomposed into gold nanoparticles at the growth temperature and acted as the catalyst particles to start the growth of Si nanowires. The as-grown Si nanowires are about 70--90 nm in diameter and up to 200 micrometers long. The salt was completely removed by water rinse after growth. Field emission of aligned CNTs grown on Si substrates and SiNWs on Si substrates and carbon clothes has been studied. A post growth annealing procedure has been found to drastically improve the field emission performance of these CNTs and SiNWs.

  19. Lithiation of silicon nanoparticles confined in carbon nanotubes.

    PubMed

    Yu, Wan-Jing; Liu, Chang; Hou, Peng-Xiang; Zhang, Lili; Shan, Xu-Yi; Li, Feng; Cheng, Hui-Ming

    2015-05-26

    Silicon has the highest theoretical lithium storage capacity of all materials at 4200 mAh/g; therefore, it is considered to be a promising candidate as the anode of high-energy-density lithium-ion batteries (LIBs). However, serious volume changes caused by lithium insertion/deinsertion lead to a rapid decay of the performance of the Si anode. Here, a Si nanoparticle (NP)-filled carbon nanotube (CNT) material was prepared by chemical vapor deposition, and a nanobattery was constructed inside a transmission electron microscope (TEM) using the Si NP-filled CNT as working electrode to directly investigate the structural change of the Si NPs and the confinement effect of the CNT during the lithiation and delithiation processes. It is found that the volume expansion (∼180%) of the lithiated Si NPs is restricted by the wall of the CNTs and that the CNT can accommodate this volume expansion without breaking its tubular structure. The Si NP-filled CNTs showed a high reversible lithium storage capacity and desirable high rate capability, because the pulverization and exfoliation of the Si NPs confined in CNTs were efficiently prevented. Our results demonstrate that filling CNTs with high-capacity active materials is a feasible way to make high-performance LIB electrode materials, taking advantage of the unique confinement effect and good electrical conductivity of the CNTs. PMID:25869474

  20. Controlling the volumetric parameters of nitrogen-doped carbon nanotube cups.

    PubMed

    Allen, Brett L; Keddie, Matthew B; Star, Alexander

    2010-07-01

    Analogous to multiwalled carbon nanotubes, nitrogen-doped carbon nanotube cups (NCNCs) have been synthesized with defined volumetric parameters (diameter and segment lengths) by controlling the catalyst particle size and the concentration of nitrogen precursor utilized in the chemical vapor deposition (CVD) reaction, allowing for tailored interior cavity space of cross-linked NCNCs, i.e. nanocapsules.

  1. Synthesis and characterization of carbon-doped titania as an artificial solar light sensitive photocatalyst

    NASA Astrophysics Data System (ADS)

    Li, Yuanzhi; Hwang, Doo-Sun; Lee, Nam Hee; Kim, Sun-Jae

    2005-03-01

    The carbon-doped titania with high surface area was prepared by temperature-programmed carbonization of K-contained anatase titania under a flow of cyclohexane. This carbon-doped titania has much better photocatalytic activity for gas-phase photo-oxidation of benzene under irradiation of artificial solar light than pure titania. The visible light photocatalytic activity is ascribed to the presence of oxygen vacancy states because of the formation of Ti 3+ species between the valence and the conduction bands in the TiO 2 band structure. The co-existence of K and carbonaceous species together stabilize Ti 3+ species and the oxygen vacancy state in the as-synthesized carbon-doped titania.

  2. Improved photovoltaic performance of multiple carbon-doped ZnO nanostructures under UV and visible light irradiation.

    PubMed

    Liu, Xianbin; Du, Hejun; Sun, Xiao Wei; Zhan, Zhaoyao; Sun, Gengzhi; Li, Fengji; Zheng, Lianxi; Zhang, Sam

    2014-09-01

    We report synthesis of multiple carbon-doped ZnO nanostructures by using carbon cloth as substrates to obtain multiple hollow ZnO microtube-nanowire structures. X-ray diffraction, X-ray photoelectron spectroscopy, and transmission electron microscopy analysis clearly show that carbon is doped into ZnO through substitution of carbon for oxygen in the growth and annealing processes. Upon exposure to 633-nm red laser, a distinct photoresponse can be observed, which indicates that carbon doping in ZnO can well extend its light harvesting to visible light region. Furthermore, a prototype of photovoltaic cell was fabricated to demonstrate the photovoltaic performance of multiple carbon-doped ZnO nanostructures under UV and visible light irradiation. This result shows that carbon-doped ZnO can act as effective photoactive materials for photoelectric components. PMID:25924372

  3. Improved photovoltaic performance of multiple carbon-doped ZnO nanostructures under UV and visible light irradiation.

    PubMed

    Liu, Xianbin; Du, Hejun; Sun, Xiao Wei; Zhan, Zhaoyao; Sun, Gengzhi; Li, Fengji; Zheng, Lianxi; Zhang, Sam

    2014-09-01

    We report synthesis of multiple carbon-doped ZnO nanostructures by using carbon cloth as substrates to obtain multiple hollow ZnO microtube-nanowire structures. X-ray diffraction, X-ray photoelectron spectroscopy, and transmission electron microscopy analysis clearly show that carbon is doped into ZnO through substitution of carbon for oxygen in the growth and annealing processes. Upon exposure to 633-nm red laser, a distinct photoresponse can be observed, which indicates that carbon doping in ZnO can well extend its light harvesting to visible light region. Furthermore, a prototype of photovoltaic cell was fabricated to demonstrate the photovoltaic performance of multiple carbon-doped ZnO nanostructures under UV and visible light irradiation. This result shows that carbon-doped ZnO can act as effective photoactive materials for photoelectric components.

  4. Ultra-shallow p{sup +}-junction formation in silicon by excimer laser doping -- A heat and mass transfer perspective

    SciTech Connect

    Zhang, X.; Ho, J.R.; Grigoropoulos, C.P.

    1995-12-31

    A new technique is developed to fabricate the ultra-shallow p{sup +}-junctions with the depth from 30 nm to 400 nm. The ultra-shallow p{sup +}-junction is successfully made by the excimer laser doping of crystalline silicon with a solid spin-on-glass (SOG) dopant. High boron concentration of 10{sup 20} atoms/cc and the box-like junction profile are achieved through the nanosecond pulsed laser heating, melting, and boron mass diffusion in the 100 nm thin silicon layer close to the surface. The key mechanism determining the box-like junction shape is found to be the melt-solid interface limited diffusion. The optimal laser fluence condition for SOG doping is found about 0.6--0.8 J/cm{sup 2} by studying the ultra-shallow p{sup +}-junction boron profiles measured by the secondary ion mass spectroscopy (SIMS) versus the laser fluence and the pulse number. Heat and mass transfer are studied at the nanosecond time scale and the nanometer length scale. The ID numerical analysis agrees reasonably with the experiment, within the available physical picture. Possible mechanisms such as boron diffusivity dependence on the dopant concentration in the molten silicon are proposed.

  5. Effect of substitutionally boron-doped single-walled semiconducting zigzag carbon nanotubes on ammonia adsorption.

    PubMed

    Vikramaditya, Talapunur; Sumithra, Kanakamma

    2014-03-15

    We investigate the binding of ammonia on intrinsic and substitutionally doped semiconducting single-walled carbon nanotubes (SWCNTs) on the side walls using density functional calculations. Ammonia is found to be weakly physisorbed on intrinsic semiconducting nanotubes while on substitutional doping with boron its affinity is enhanced considerably reflected with increase in binding energies and charge transfer. This is attributed to the strong chemical interaction between electron rich nitrogen of ammonia and electron deficient boron of the doped SWCNT. On doping, the density of states are changed compared to the intrinsic case and additional levels are formed near the Fermi level leading to overlap of levels with that of ammonia indicating charge transfer. The doped SWCNTs thus are expected to be a potential candidate for detecting ammonia.

  6. Heterodoped nanotubes: theory, synthesis, and characterization of phosphorus-nitrogen doped multiwalled carbon nanotubes.

    PubMed

    Cruz-Silva, Eduardo; Cullen, David A; Gu, Lin; Romo-Herrera, Jose Manuel; Muñoz-Sandoval, Emilio; López-Urías, Florentino; Sumpter, Bobby G; Meunier, Vincent; Charlier, Jean-Christophe; Smith, David J; Terrones, Humberto; Terrones, Mauricio

    2008-03-01

    Arrays of multiwalled carbon nanotubes doped with phosphorus (P) and nitrogen (N) are synthesized using a solution of ferrocene, triphenyl-phosphine, and benzylamine in conjunction with spray pyrolysis. We demonstrate that iron phosphide (Fe(3)P) nanoparticles act as catalysts during nanotube growth, leading to the formation of novel PN-doped multiwalled carbon nanotubes. The samples were examined by high resolution electron microscopy and microanalysis techniques, and their chemical stability was explored by means of thermogravimetric analysis in the presence of oxygen. The PN-doped structures reveal important morphology and chemical changes when compared to N-doped nanotubes. These types of heterodoped nanotubes are predicted to offer many new opportunities in the fabrication of fast-response chemical sensors.

  7. Nitrogen-doped carbon nanotubes under electron irradiation simulated with a tight-binding model

    SciTech Connect

    Loponen, T.; Nieminen, R. M.; Krasheninnikov, A. V.; Kaukonen, M.

    2006-08-15

    Experiments show that nitrogen-doped carbon nanotubes subjected to the electron beam in a transmission electron microscope can easily lose dopant atoms and that overall they are less stable under electron irradiation than the pristine tubes. To understand the lower stability of nitrogen-doped nanotubes we use a density-functional-theory-based tight-binding model and simulate impacts of energetic electrons onto the nanotubes. We show that the dopant atom displacement energy and thus the electron threshold energy is lower for nanotubes with smaller diameter and that, independent of the nanotube diameter, the dopant nitrogen atoms can be displaced more easily than the host carbon atoms. Our results set a limit on the threshold electron energy for damage production in N-doped tubes and indicate that spatially localized electron irradiation of doped nanotubes can be used for local atomic and band structure engineering.

  8. Growth of metal-catalyst-free nitrogen-doped metallic single-wall carbon nanotubes.

    PubMed

    Li, Jin-Cheng; Hou, Peng-Xiang; Zhang, Lili; Liu, Chang; Cheng, Hui-Ming

    2014-10-21

    Nitrogen-doped (N-doped) single-wall carbon nanotubes (SWCNTs) were synthesized by chemical vapor deposition using SiOx nanoparticles as a catalyst and ethylenediamine as the source of both carbon and nitrogen. The N-doped SWCNTs have a mean diameter of 1.1 nm and a narrow diameter range, with 92% of them having diameters from 0.7 to 1.4 nm. Multi-wavelength laser Raman spectra and temperature-dependent electrical resistance indicate that the SWCNT sample is enriched with metallic nanotubes. These N-doped SWCNTs showed excellent electrocatalytic activity for the oxygen reduction reaction and highly selective and sensitive sensing ability for dopamine detection.

  9. Nitrogen-Doped Carbon Dots as A New Substrate for Sensitive Glucose Determination.

    PubMed

    Ji, Hanxu; Zhou, Feng; Gu, Jiangjiang; Shu, Chen; Xi, Kai; Jia, Xudong

    2016-01-01

    Nitrogen-doped carbon dots are introduced as a novel substrate suitable for enzyme immobilization in electrochemical detection metods. Nitrogen-doped carbon dots are easily synthesised from polyacrylamide in just one step. With the help of the amino group on chitosan, glucose oxidase is immobilized on nitrogen-doped carbon dots-modified carbon glassy electrodes by amino-carboxyl reactions. The nitrogen-induced charge delocalization at nitrogen-doped carbon dots can enhance the electrocatalytic activity toward the reduction of O₂. The specific amino-carboxyl reaction provides strong and stable immobilization of GOx on electrodes. The developed biosensor responds efficiently to the presence of glucose in serum samples over the concentration range from 1 to 12 mM with a detection limit of 0.25 mM. This novel biosensor has good reproducibility and stability, and is highly selective for glucose determination under physiological conditions. These results indicate that N-doped quantum dots represent a novel candidate material for the construction of electrochemical biosensors. PMID:27153071

  10. Nitrogen-Doped Carbon Dots as A New Substrate for Sensitive Glucose Determination

    PubMed Central

    Ji, Hanxu; Zhou, Feng; Gu, Jiangjiang; Shu, Chen; Xi, Kai; Jia, Xudong

    2016-01-01

    Nitrogen-doped carbon dots are introduced as a novel substrate suitable for enzyme immobilization in electrochemical detection metods. Nitrogen-doped carbon dots are easily synthesised from polyacrylamide in just one step. With the help of the amino group on chitosan, glucose oxidase is immobilized on nitrogen-doped carbon dots-modified carbon glassy electrodes by amino-carboxyl reactions. The nitrogen-induced charge delocalization at nitrogen-doped carbon dots can enhance the electrocatalytic activity toward the reduction of O2. The specific amino-carboxyl reaction provides strong and stable immobilization of GOx on electrodes. The developed biosensor responds efficiently to the presence of glucose in serum samples over the concentration range from 1 to 12 mM with a detection limit of 0.25 mM. This novel biosensor has good reproducibility and stability, and is highly selective for glucose determination under physiological conditions. These results indicate that N-doped quantum dots represent a novel candidate material for the construction of electrochemical biosensors. PMID:27153071

  11. Hydrogen passivation of titanium impurities in silicon: Effect of doping conditions

    SciTech Connect

    Santos, P.; Coutinho, J. Torres, V. J. B.; Rayson, M. J.; Briddon, P. R.

    2014-07-21

    While the contamination of solar silicon by fast diffusing transition metals can be now limited through gettering, much attention has been drawn to the slow diffusing species, especially the early 3d and 4d elements. To some extent, hydrogen passivation has been successful in healing many deep centers, including transition metals in Si. Recent deep-level transient spectroscopy (DLTS) measurements concerning hydrogen passivation of Ti revealed the existence of at least four electrical levels related to Ti{sub i}H{sub n} in the upper-half of the gap. These findings challenge the existing models regarding both the current level assignment as well as the structure/species involved in the defects. We revisit this problem by means of density functional calculations and find that progressive hydrogenation of interstitial Ti is thermodynamically stable in intrinsic and n-doped Si. Full passivation may not be possible to attain in p-type Si as Ti{sub i}H{sub 3} and Ti{sub i}H{sub 4} are metastable against dissociation and release of bond-centered protons. All DLTS electron traps are assigned, namely, E40′ to Ti{sub i}H(-/0), E170′ to Ti{sub i}H{sub 3}(0/+), E(270) to Ti{sub i}H{sub 2}(0/+), and E170 to Ti{sub i}H(0/+) transitions. Ti{sub i}H{sub 4} is confirmed to be electrically inert.

  12. Palladium on Nitrogen-Doped Mesoporous Carbon: A Bifunctional Catalyst for Formate-Based, Carbon-Neutral Hydrogen Storage.

    PubMed

    Wang, Fanan; Xu, Jinming; Shao, Xianzhao; Su, Xiong; Huang, Yanqiang; Zhang, Tao

    2016-02-01

    The lack of safe, efficient, and economical hydrogen storage technologies is a hindrance to the realization of the hydrogen economy. Reported herein is a reversible formate-based carbon-neutral hydrogen storage system that is established over a novel catalyst comprising palladium nanoparticles supported on nitrogen-doped mesoporous carbon. The support was fabricated by a hard template method and nitridated under a flow of ammonia. Detailed analyses demonstrate that this bicarbonate/formate redox equilibrium is promoted by the cooperative role of the doped nitrogen functionalities and the well-dispersed, electron-enriched palladium nanoparticles.

  13. Enhancement of Pt-Based Catalysts Via N-Doped Carbon Supports

    SciTech Connect

    O'Hayre, R.; Zhou, Y.; Pasquarelli, R.; Berry, J.; Ginley, D.

    2008-01-01

    This study experimentally examines the enhancement of carbon supported Pt-based catalysts systems via nitrogen doping. It has been reported that nitrogen-containing carbons promote significant enhancement in Pt/C catalyst activity and durability with respect to the methanol oxidation and oxygen reduction reactions. In order to systematically investigate the effect of N-doping, in this work we have developed geometrically well-defined model catalytic systems consisting of tunable assemblies of Pt catalyst nanoparticles deposited onto both N-doped and undoped highly-oriented pyrolytic graphite (HOPG) substrates. N-doping was achieved via ion beam implantation, and Pt was electrodeposited from solutions of H{sub 2}PtCl{sub 6} in aqueous HClO{sub 4}. Morphology from scanning electron microscopy (SEM) and catalytic activity measurement from aqueous electrochemical analysis were utilized to examine the N-doping effects. The results strongly support the theory that doping nitrogen into a graphite support significantly affects both the morphology and behavior of the overlying Pt nanoparticles. In particular, nitrogen-doping was observed to cause a significant decrease in the average Pt nanoparticle size, an increase in the Pt nanoparticle dispersion, and a significant increase in catalytic activity for both methanol oxidation and oxygen reduction.

  14. Stabilities and mechanical and electronic properties on BN doped zigzag single-wall carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Vongachariya, Arthit; Parasuk, Vudhichai

    2015-12-01

    Electronic structures of undoped and BN doped zigzag (8,0) single-walled carbon nanotube (SWCNT) were investigated using density functional theoretical calculations. Their stabilities due to BN doping and spin states were considered and those with the shortest B-N distance and singlet spin is the most stable. The BN substitution also causes the reduction of the band gap energy. While the BN doping reduces the band gap energy from 0.606 to 0.183 eV, it has no effect on the Young's modulus value. The band gap energy of SWCNTs can be varied upon applying stress. At high stress ratio, SWCNT could become metallic.

  15. N-type carbon nanotube by alkaline-earth metal Sr doping

    NASA Astrophysics Data System (ADS)

    Kim, Byung Hoon; Park, Tae Hoi; Baek, Seung Jae; Lee, Dong Su; Park, Seung Joo; Kim, Jun Sung; Park, Yung Woo

    2008-05-01

    Alkaline-earth metal, Sr, was doped on multiwalled carbon nanotubes (MWNTs) by vapor phase reaction method. The tunneling electron microscopy, energy dispersive x ray, and Raman spectroscopy were studied for verifying the Sr doping on MWNT. The temperature-dependent resistivity [ρ(T)] and thermoelectric power [S(T)] were also performed for both pristine MWNT and Sr-doped MWNT (Sr-MWNT). ρ(T ) of Sr-MWNT did not significantly change compared to pristine MWNT. However, S(T ) of Sr-MWNT considerably changes, i.e., it shows n-type behavior in contrast to pristine MWNT.

  16. Plasmons in doped finite carbon nanotubes and their interactions with fast electrons and quantum emitters

    NASA Astrophysics Data System (ADS)

    de Vega, Sandra; Cox, Joel D.; de Abajo, F. Javier García

    2016-08-01

    We study the potential of highly doped finite carbon nanotubes to serve as plasmonic elements that mediate the interaction between quantum emitters. Similar to graphene, nanotubes support intense plasmons that can be modulated by varying their level of electrical doping. These excitations exhibit large interaction with light and electron beams, as revealed upon examination of the corresponding light extinction cross-section and electron energy-loss spectra. We show that quantum emitters experience record-high Purcell factors, while they undergo strong mutual interaction mediated by their coupling to the tube plasmons. Our results show the potential of doped finite nanotubes as tunable plasmonic materials for quantum optics applications.

  17. Layer disordering and doping compensation of an intersubband AlGaN/AlN superlattice by silicon implantation

    NASA Astrophysics Data System (ADS)

    Wierer, J. J.; Allerman, A. A.; Skogen, E. J.; Tauke-Pedretti, A.; Alford, C.; Vawter, G. A.; Montaño, I.

    2014-09-01

    Layer disordering and doping compensation of an Al0.028Ga0.972N/AlN superlattice by implantation are demonstrated. The as-grown sample exhibits intersubband absorption at ˜1.56 μm which is modified when subject to a silicon implantation. After implantation, the intersubband absorption decreases and shifts to longer wavelengths. Also, with increasing implant dose, the intersubband absorption decreases. It is shown that both layer disordering of the heterointerfaces and doping compensation from the vacancies produced during the implantation cause the changes in the intersubband absorption. Such a method is useful for removing absorption in spatially defined areas of III-nitride optoelectronic devices by, for example, creating low-loss optical waveguides monolithically that can be integrated with as-grown areas operating as electro-absorption intersubband modulators.

  18. A new analytical drain current model of cylindrical gate silicon tunnel FET with source δ-doping

    NASA Astrophysics Data System (ADS)

    Dash, Sidhartha; Jena, Biswajit; Mishra, Guru Prasad

    2016-09-01

    A new δ-doped cylindrical gate silicon tunnel FET (DCG-TFET) analytical model is developed and investigated extensively, with the aim of addressing the challenges of the conventional CG-TFET. The improvement in tunneling probability of charge carriers has been achieved by inserting a δ-doping sheet in the source region which leads to high drain current as compared to CG-TFET. The effect of distance between the δ-doping sheet and source/channel interface on the current performance, sub-threshold swing (SS) and threshold voltage (Vth) has been examined. The instantaneous position of δ-doping region from the tunneling junction is optimized based on the trade-off between current ratio and SS. The present model exhibit maximum switching current ratio (ION/IOFF ≅1012) for an optimum distance of 2 nm without degrading SS (SS˜55 mV/decade) and Vth performance. The electrostatic behavior of the present model is obtained using the solution of Poisson's equation in the cylindrical coordinate system. However the impact of scaling of the gate oxide thickness and cylindrical pillar diameter on drain current performance has been discussed. In future, DCG-TFET can be one of the potential successors for ultra-low-power applications because of its improved drain current and switching ratio.

  19. A new analytical drain current model of cylindrical gate silicon tunnel FET with source δ-doping

    NASA Astrophysics Data System (ADS)

    Dash, Sidhartha; Jena, Biswajit; Mishra, Guru Prasad

    2016-09-01

    A new δ-doped cylindrical gate silicon tunnel FET (DCG-TFET) analytical model is developed and investigated extensively, with the aim of addressing the challenges of the conventional CG-TFET. The improvement in tunneling probability of charge carriers has been achieved by inserting a δ-doping sheet in the source region which leads to high drain current as compared to CG-TFET. The effect of distance between the δ-doping sheet and source/channel interface on the current performance, sub-threshold swing (SS) and threshold voltage (Vth) has been examined. The instantaneous position of δ-doping region from the tunneling junction is optimized based on the trade-off between current ratio and SS. The present model exhibit maximum switching current ratio (ION/IOFF ≅1012) for an optimum distance of 2 nm without degrading SS (SS∼55 mV/decade) and Vth performance. The electrostatic behavior of the present model is obtained using the solution of Poisson's equation in the cylindrical coordinate system. However the impact of scaling of the gate oxide thickness and cylindrical pillar diameter on drain current performance has been discussed. In future, DCG-TFET can be one of the potential successors for ultra-low-power applications because of its improved drain current and switching ratio.

  20. Low resistance Ohmic contact to p-type crystalline silicon via nitrogen-doped copper oxide films

    NASA Astrophysics Data System (ADS)

    Zhang, Xinyu; Wan, Yimao; Bullock, James; Allen, Thomas; Cuevas, Andres

    2016-08-01

    This work explores the application of transparent nitrogen doped copper oxide (CuOx:N) films deposited by reactive sputtering to create hole-selective contacts for p-type crystalline silicon (c-Si) solar cells. It is found that CuOx:N sputtered directly onto crystalline silicon is able to form an Ohmic contact. X-ray photoelectron spectroscopy and Raman spectroscopy measurements are used to characterise the structural and physical properties of the CuOx:N films. Both the oxygen flow rate and the substrate temperature during deposition have a significant impact on the film composition, as well as on the resulting contact resistivity. After optimization, a low contact resistivity of ˜10 mΩ cm2 has been established. This result offers significant advantages over conventional contact structures in terms of carrier transport and device fabrication.

  1. Coupled fiber taper extraction of 1.53 microm photoluminescence from erbium doped silicon nitride photonic crystal cavities.

    PubMed

    Shambat, Gary; Gong, Yiyang; Lu, Jesse; Yerci, Selçuk; Li, Rui; Dal Negro, Luca; Vucković, Jelena

    2010-03-15

    Optical fiber tapers are used to collect photoluminescence emission at approximately 1.5 microm from photonic crystal cavities fabricated in erbium doped silicon nitride on silicon. In the experiment, photoluminescence collection via one arm of the fiber taper is enhanced 2.5 times relative to free space collection, corresponding to a net collection efficiency of 4%. Theoretically, the collection efficiency into one arm of the fiber-taper with this material system and cavity design can be as high as 12.5%, but the degradation of the experimental coupling efficiency relative to this value mainly comes from scattering loss within the short taper transition regions. By varying the fiber taper offset from the cavity, a broad tuning range of coupling strength and collection efficiency is obtained. This material system combined with fiber taper collection is promising for building on-chip optical amplifiers.

  2. Light-induced excess conductivity and the role of argon in the deposition of doping-modulated amorphous silicon superlattices

    SciTech Connect

    Su, F.; Levine, S.; Vanier, P.E.; Kampas, F.J.

    1985-09-15

    Amorphous silicon pnpn ... structures that exhibit the phenomenon of light-induced excess conductivity (LEC) have been deposited in a single-chamber glow discharge deposition system by simple control of gas flows. This phenomenon is negligible when the doped silane is undiluted but clearly evident when the silane is diluted in argon. Experiments were performed in which argon dilution was only used for specific regions of the structure. The LEC effect was found to occur if argon dilution was used during the deposition of any fraction of the superlattice layers. These experiments rule out mechanisms requiring phosphorus-boron defect complexes or interface states.

  3. Excess carrier generation in femtosecond-laser processed sulfur doped silicon by means of sub-bandgap illumination

    SciTech Connect

    Guenther, Kay-Michael; Gimpel, Thomas; Ruibys, Augustinas; Kontermann, Stefan; Tomm, Jens W.; Winter, Stefan; Schade, Wolfgang

    2014-01-27

    With Fourier-transform photocurrent spectroscopy and spectral response measurements, we show that silicon doped with sulfur by femtosecond laser irradiation generates excess carriers, when illuminated with infrared light above 1100 nm. Three distinct sub-bandgap photocurrent features are observed. Their onset energies are in good agreement with the known sulfur levels S{sup +}, S{sup 0}, and S{sub 2}{sup 0}. The excess carriers are separated by a pn-junction to form a significant photocurrent. Therefore, this material likely demonstrates the impurity band photovoltaic effect.

  4. Nitrogen and sulfur co-doped carbon dots with strong blue luminescence

    NASA Astrophysics Data System (ADS)

    Ding, Hui; Wei, Ji-Shi; Xiong, Huan-Ming

    2014-10-01

    Sulfur-doped carbon dots (S-CDs) with a quantum yield (QY) of 5.5% and nitrogen, sulfur co-doped carbon dots (N,S-CDs) with a QY of 54.4% were synthesized, respectively, via the same hydrothermal route using α-lipoic acid as the carbon source. The obtained S-CDs and N,S-CDs had similar sizes but different optical features. The QY of N,S-CDs was gradually enhanced when extending the reaction time to increase the nitrogen content. After careful characterization of these CDs, the doped nitrogen element was believed to be in the form of C&z.dbd;N and C-N bonds which enhanced the fluorescence efficiency significantly. Meanwhile, the co-doped sulfur element was found to be synergistic for nitrogen doping in N,S-CDs. The optimal N,S-CDs were successfully employed as good multicolor cell imaging probes due to their fine dispersion in water, excitation-dependent emission, excellent fluorescence stability and low toxicity. Besides, such N,S-CDs showed a wide detection range and excellent accuracy as fluorescent sensors for Fe3+ ions.Sulfur-doped carbon dots (S-CDs) with a quantum yield (QY) of 5.5% and nitrogen, sulfur co-doped carbon dots (N,S-CDs) with a QY of 54.4% were synthesized, respectively, via the same hydrothermal route using α-lipoic acid as the carbon source. The obtained S-CDs and N,S-CDs had similar sizes but different optical features. The QY of N,S-CDs was gradually enhanced when extending the reaction time to increase the nitrogen content. After careful characterization of these CDs, the doped nitrogen element was believed to be in the form of C&z.dbd;N and C-N bonds which enhanced the fluorescence efficiency significantly. Meanwhile, the co-doped sulfur element was found to be synergistic for nitrogen doping in N,S-CDs. The optimal N,S-CDs were successfully employed as good multicolor cell imaging probes due to their fine dispersion in water, excitation-dependent emission, excellent fluorescence stability and low toxicity. Besides, such N,S-CDs showed a

  5. Dopant Diffusion and Activation in Silicon Nanowires Fabricated by ex Situ Doping: A Correlative Study via Atom-Probe Tomography and Scanning Tunneling Spectroscopy.

    PubMed

    Sun, Zhiyuan; Hazut, Ori; Huang, Bo-Chao; Chiu, Ya-Ping; Chang, Chia-Seng; Yerushalmi, Roie; Lauhon, Lincoln J; Seidman, David N

    2016-07-13

    Dopants play a critical role in modulating the electric properties of semiconducting materials, ranging from bulk to nanoscale semiconductors, nanowires, and quantum dots. The application of traditional doping methods developed for bulk materials involves additional considerations for nanoscale semiconductors because of the influence of surfaces and stochastic fluctuations, which may become significant at the nanometer-scale level. Monolayer doping is an ex situ doping method that permits the post growth doping of nanowires. Herein, using atom-probe tomography (APT) with subnanometer spatial resolution and atomic-ppm detection limit, we study the distributions of boron and phosphorus in ex situ doped silicon nanowires with accurate control. A highly phosphorus doped outer region and a uniformly boron doped interior are observed, which are not predicted by criteria based on bulk silicon. These phenomena are explained by fast interfacial diffusion of phosphorus and enhanced bulk diffusion of boron, respectively. The APT results are compared with scanning tunneling spectroscopy data, which yields information concerning the electrically active dopants. Overall, comparing the information obtained by the two methods permits us to evaluate the diffusivities of each different dopant type at the nanowire oxide, interface, and core regions. The combined data sets permit us to evaluate the electrical activation and compensation of the dopants in different regions of the nanowires and understand the details that lead to the sharp p-i-n junctions formed across the nanowire for the ex situ doping process.

  6. Magnetite nanoparticles doped photoresist derived carbon as a suitable substratum for nerve cell culture.

    PubMed

    Zhu, Zanzan; Rezhdo, Olijora; Perrone, Matthew; Bao, Zhengzheng; Munir, Ahsan; Wang, Jianlong; Zhou, H Susan; Shao, Jiahui

    2013-02-01

    A method which alters the substrate's physical and electrochemical properties by doping photoresist derived carbon with magnetite nanoparticles has been developed to enhance the existing substrate's ability to foster cell growth. Cyclic voltammetry, scanning electron microscopy and atomic force microscopy are used to evaluate the characters of the prepared film. And then, the magnetite nanoparticles doped carbon film is used as substrate for the growth of nerve cell. Here, rat pheochromocytoma cells are used for culture to test substrate-cell interactions. The results showed an increase in cell concentration and average neurite length with the increase of nanoparticle concentration on the surface. Importantly, the nerve cells can be grown on the magnetite nanoparticles doped carbon even in the absence of nerve growth factor. This finding will potentially provide a new material for nerve regeneration.

  7. Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament

    NASA Technical Reports Server (NTRS)

    Malik, R. J.; Nottenberg, R. N.; Schubert, E. F.; Walker, J. F.; Ryan, R. W.

    1988-01-01

    Carbon doping of GaAs grown by molecular beam epitaxy has been obtained for the first time by use of a heated graphite filament. Controlled carbon acceptor concentrations over the range of 10 to the 17th-10 to the 20th/cu cm were achieved by resistively heating a graphite filament with a direct current power supply. Capacitance-voltage, p/n junction and secondary-ion mass spectrometry measurements indicate that there is negligible diffusion of carbon during growth and with postgrowth rapid thermal annealing. Carbon was used for p-type doping in the base of Npn AlGaAs/GaAs heterojunction bipolar transistors. Current gains greater than 100 and near-ideal emitter heterojunctions were obtained in transistors with a carbon base doping of 1 x 10 to the 19th/cu cm. These preliminary results indicate that carbon doping from a solid graphite source may be an attractive substitute for beryllium, which is known to have a relatively high diffusion coefficient in GaAs.

  8. Effect of reaction temperature on structure and fluorescence properties of nitrogen-doped carbon dots

    NASA Astrophysics Data System (ADS)

    Zhang, Yi; Wang, Yaling; Feng, Xiaoting; Zhang, Feng; Yang, Yongzhen; Liu, Xuguang

    2016-11-01

    To investigate the effect of reaction temperature and nitrogen doping on the structure and fluorescence properties of carbon dots (CDs), six kinds of nitrogen-doped CDs (NCDs) were synthesized at reaction temperatures of 120, 140, 160, 180, 200 and 220 °C, separately, by using citric acid as carbon source and ammonia solution as nitrogen source. Nitrogen-free CDs (N-free CDs-180) was also prepared at 180 °C by using citric acid as the only carbon source for comparison. Results show that reaction temperature has obvious effect on carbonization degree, quantum yield (QY), ultraviolet-visible (UV-vis) absorption and photoluminescence (PL) spectra but less effect on functional groups, nitrogen doping degree and fluorescence lifetime of NCDs. Compared with N-free CDs-180, NCDs-180 possesses enchanced QY and longer fluorescence lifetime. Doping nitrogen has obvious effect on UV-vis absorption and PL spectra but less effect on particles sizes and carbonization degree. The formation mechanism of NCDs is explored: QY of NCDs depends largely on the number of fluorescent polymer chains (FPC), the competition between FPC formation on the surface of NCDs and carbon core growth leads to the change in number of FPC, and consequently to the NCDs with highest QY at appropriate hydrothermal temperature.

  9. Synthesis of N-Doped meso-macroporous carbon and its application to SO2 absorption

    NASA Astrophysics Data System (ADS)

    Liu, Chao; Zhang, Lei; Hu, Yongqi; Chen, Aibing; Wang, Xiaojing

    2014-12-01

    N-Doped meso-macroporous carbon materials were synthesized using melamine-formaldehyde resin as carbon precursor and silica spheres as a removable template. The as-synthesized carbon materials with a bimodal pores structure (about 3.9 and ˜50-200 nm) display a high surface nitrogen content of 30 wt %. The macropores of carbon materials can be modulated by changing the diameter of template. The SO2 adsorption experiments demonstrate a high adsorption capacity of 78.6 mg g-1 and a considerable stability even over 9 cycles for the carbon materials.

  10. Theoretical study on the adsorption of carbon dioxide on individual and alkali-metal doped MOF-5s

    NASA Astrophysics Data System (ADS)

    Ha, Nguyen Thi Thu; Lefedova, O. V.; Ha, Nguyen Ngoc

    2016-01-01

    Density functional theory (DFT) calculations were performed to investigate the adsorption of carbon dioxide (CO2) on metal-organic framework (MOF-5) and alkali-metal (Li, K, Na) doped MOF-5s. The adsorption energy calculation showed that metal atom adsorption is exothermic in MOF-5 system. Moreover, alkali-metal doping can significantly improve the adsorption ability of carbon dioxide on MOF-5. The best influence is observed for Li-doping.

  11. Construction of a Semiconductor-Biological Interface for Solar Energy Conversion: p-Doped Silicon/Photosystem I/Zinc Oxide.

    PubMed

    Beam, Jeremiah C; LeBlanc, Gabriel; Gizzie, Evan A; Ivanov, Borislav L; Needell, David R; Shearer, Melinda J; Jennings, G Kane; Lukehart, Charles M; Cliffel, David E

    2015-09-15

    The interface between photoactive biological materials with two distinct semiconducting electrodes is challenging both to develop and analyze. Building off of our previous work using films of photosystem I (PSI) on p-doped silicon, we have deposited a crystalline zinc oxide (ZnO) anode using confined-plume chemical deposition (CPCD). We demonstrate the ability of CPCD to deposit crystalline ZnO without damage to the PSI biomaterial. Using electrochemical techniques, we were able to probe this complex semiconductor-biological interface. Finally, as a proof of concept, a solid-state photovoltaic device consisting of p-doped silicon, PSI, ZnO, and ITO was constructed and evaluated.

  12. Transformation, morphology, and dissolution of silicon and carbon in rice straw-derived biochars under different pyrolytic temperatures.

    PubMed

    Xiao, Xin; Chen, Baoliang; Zhu, Lizhong

    2014-03-18

    Biochars are increasingly recognized as environmentally friendly and cheap remediation agents for soil pollution. The roles of silicon in biochars and interactions between silicon and carbon have been neglected in the literature to date, while the transformation, morphology, and dissolution of silicon in Si-rich biochars remain largely unaddressed. In this study, Si-rich biochars derived from rice straw were prepared under 150-700 °C (named RS150-RS700). The transformation and morphology of carbon and silicon in biochar particles were monitored by FTIR, XRD, and SEM-EDX. With increasing pyrolytic temperature, silicon accumulated, and its speciation changed from amorphous to crystalline matter, while the organic matter evolved from aliphatic to aromatic. For rice straw biomass containing amorphous carbon and amorphous silicon, dehydration (<250 °C) made silicic acid polymerize, resulting in a closer integration of carbon and silicon. At medium pyrolysis temperatures (250-350 °C), an intense cracking of carbon components occurred, and, thus, the silicon located in the inside tissue was exposed. At high pyrolysis temperatures (500-700 °C), the biochar became condensed due to the aromatization of carbon and crystallization of silicon. Correspondingly, the carbon release in water significantly decreased, while the silicon release somewhat decreased and then sharply increased with pyrolytic temperature. Along with SEM-EDX images of biochars before and after water washing, we proposed a structural relationship between carbon and silicon in biochars to explain the mutual protection between carbon and silicon under different pyrolysis temperatures, which contribute to the broader understanding of biochar chemistry and structure. The silicon dissolution kinetics suggests that high Si biochars could serve as a novel slow release source of biologically available Si in low Si agricultural soils.

  13. Can trans-polyacetylene be formed on single-walled carbon-doped boron nitride nanotubes?

    PubMed

    Chen, Ying; Wang, Hong-xia; Zhao, Jing-xiang; Cai, Qing-hai; Wang, Xiao-guang; Wang, Xuan-zhang

    2012-07-01

    Recently, the grafting of polymer chains onto nanotubes has attracted increasing attention as it can potentially be used to enhance the solubility of nanotubes and in the development of novel nanotube-based devices. In this article, based on density functional theory (DFT) calculations, we report the formation of trans-polyacetylene on single-walled carbon-doped boron nitride nanotubes (BNNTs) through their adsorption of a series of C(2)H(2) molecules. The results show that, rather than through [2 + 2] cycloaddition, an individualmolecule would preferentially attach to a carbon-doped BNNT via "carbon attack" (i.e., a carbon in the C(2)H(2) attacks a site on the BNNT). The adsorption energy gradually decreases with increasing tube diameter. The free radical of the carbon-doped BNNT is almost completely transferred to the carbon atom at the end of the adsorbed C(2)H(2) molecule. When another C(2)H(2) molecule approaches the carbon-doped BNNT, it is most energetically favorable for this C(2)H(2) molecule to be adsorbed at the end of the previously adsorbed C(2)H(2) molecule, and so on with extra C(2)H(2) molecules, leading to the formation of polyacetylene on the nanotube. The spin of the whole system is always localized at the tip of the polyacetylene formed, which initiates the adsorption of the incoming species. The present results imply that carbon-doped BNNT is an effective "metal-free" initiator for the formation of polyacetylene. PMID:22271098

  14. In situ assembly of gold nanoparticles on nitrogen-doped carbon nanotubes for sensitive immunosensing of microcystin-LR.

    PubMed

    Zhang, Jing; Lei, Jianping; Pan, Rong; Leng, Chuan; Hu, Zheng; Ju, Huangxian

    2011-01-14

    A simple and green method was developed for in situ assembly of gold nanoparticles on nitrogen-doped carbon nanotubes, and the resulting Au/nitrogen-doped carbon nanotubes nanocomposite was used as an immobilization scaffold of antibody for sensitive immunosensing of microcystin-LR.

  15. Conductive surface modification of LiFePO4 with nitrogen doped carbon layers for lithium-ion batteries

    SciTech Connect

    Yoon, Sukeun; Liao, Chen; Sun, Xiao-Guang; Bridges, Craig A; Unocic, Raymond R; Nanda, Jagjit; Dai, Sheng; Paranthaman, Mariappan Parans

    2012-01-01

    The LiFePO4 rod surface modified with nitrogen doped carbon layer has been prepared using hydrothermal processing followed by post-annealing in the presence of an ionic liquid. The coated LiFePO4 rod exhibits good capacity retention and high rate capability as the nitrogen doped carbon improves conductivity and prevents aggregation of the rod during cycling.

  16. Egg derived nitrogen-self-doped carbon/carbon nanotube hybrids as noble-metal-free catalysts for oxygen reduction

    NASA Astrophysics Data System (ADS)

    Zhang, Jian; Wu, Siyu; Chen, Xu; Pan, Mu; Mu, Shichun

    2014-12-01

    Currently, the development of nitrogen (N) doped carbon based non-precious metal ORR catalysts has become one of the most attractive topics in low temperature fuel cells. Here, we demonstrate a green synthesis route of N-self-doped carbon materials by using eggs as N sources combining with iron sources and multi-walled carbon nanotubes (CE-Fe-MWNT). After carbonized, such hybrid materials possess an outstanding electrocatalytic activity towards ORR comparable to the commercial Pt/C catalyst in alkaline media, and both superior stability and fuel (methanol and CO) tolerance than the commercial Pt/C catalyst, which provide a promising alternative to noble metal catalysts by using abundant natural biological resources.

  17. Carbon-nanotube electron-beam (C-beam) crystallization technique for silicon TFTs

    NASA Astrophysics Data System (ADS)

    Lee, Su Woong; Kang, Jung Su; Park, Kyu Chang

    2016-02-01

    We introduced a carbon-nanotube (CNT) electron beam (C-beam) for thin film crystallization and thin film transistor (TFT) applications. As a source of electron emission, a CNT emitter which had been grown on a silicon wafer with a resist-assisted patterning (RAP) process was used. By using the C-beam exposure, we successfully crystallized a silicon thin film that had nano-sized crystalline grains. The distribution of crystalline grain size was about 10 ˜ 30 nm. This nanocrystalline silicon thin film definitely had three crystalline directions which are (111), (220) and (311), respectively. The silicon TFTs crystallized by using a C-beam exposure showed a field effect mobility of 20 cm2/Vs and an on/off ratio of more than 107. The C-beam exposure can modify the bonding network of amorphous silicon with its proper energy.

  18. Carbon Nanotube-Silicon Nanowire Heterojunction Solar Cells with Gas-Dependent Photovoltaic Performances and Their Application in Self-Powered NO2 Detecting

    NASA Astrophysics Data System (ADS)

    Jia, Yi; Zhang, Zexia; Xiao, Lin; Lv, Ruitao

    2016-06-01

    A multifunctional device combining photovoltaic conversion and toxic gas sensitivity is reported. In this device, carbon nanotube (CNT) membranes are used to cover onto silicon nanowire (SiNW) arrays to form heterojunction. The porous structure and large specific surface area in the heterojunction structure are both benefits for gas adsorption. In virtue of these merits, gas doping is a feasible method to improve cell's performance and the device can also work as a self-powered gas sensor beyond a solar cell. It shows a significant improvement in cell efficiency (more than 200 times) after NO2 molecules doping (device working as a solar cell) and a fast, reversible response property for NO2 detection (device working as a gas sensor). Such multifunctional CNT-SiNW structure can be expected to open a new avenue for developing self-powered, efficient toxic gas-sensing devices in the future.

  19. Carbon Nanotube-Silicon Nanowire Heterojunction Solar Cells with Gas-Dependent Photovoltaic Performances and Their Application in Self-Powered NO2 Detecting.

    PubMed

    Jia, Yi; Zhang, Zexia; Xiao, Lin; Lv, Ruitao

    2016-12-01

    A multifunctional device combining photovoltaic conversion and toxic gas sensitivity is reported. In this device, carbon nanotube (CNT) membranes are used to cover onto silicon nanowire (SiNW) arrays to form heterojunction. The porous structure and large specific surface area in the heterojunction structure are both benefits for gas adsorption. In virtue of these merits, gas doping is a feasible method to improve cell's performance and the device can also work as a self-powered gas sensor beyond a solar cell. It shows a significant improvement in cell efficiency (more than 200 times) after NO2 molecules doping (device working as a solar cell) and a fast, reversible response property for NO2 detection (device working as a gas sensor). Such multifunctional CNT-SiNW structure can be expected to open a new avenue for developing self-powered, efficient toxic gas-sensing devices in the future.

  20. Light source with carbon nanotubes field emission cathode and rare-earth doped nanocrystalline phosphors

    NASA Astrophysics Data System (ADS)

    Psuja, P.; Strek, W.

    2007-09-01

    In this work we report a new carbon nanotubes field emission (CNT-FED) light source with nanocrystalline phosphors. The nanocrystalline powders of cerium doped yttrium aluminum garnet were obtained by modified Pechini method. The phosphor has been electrophoretically deposited on ITO-glass substrates. The cathode composed of carbon nanotubes was fabricated in the same manner. A light source was assembled and tested. Low-voltage cathodoluminescent spectra and I-V characteristics of fabricated cathodes were measured. A possibility of application of Ce doped nanocrystalline YAG phosphor in the field emission displays (FEDs) was discussed.

  1. Synthesis, Characterization, and Application of Metal Nanoparticles Supported on Nitrogen-Doped Carbon: Catalysis beyond Electrochemistry.

    PubMed

    He, Lin; Weniger, Florian; Neumann, Helfried; Beller, Matthias

    2016-10-01

    Metal nanoparticles deposited on N-doped carbon materials have emerged as novel catalysts for various organic transformations. In this Minireview, strategies for the synthesis of metal composites on N-doped carbon supports and their state-of-the-art characterization are briefly described. The catalytic application of these fascinating materials in several industrially relevant reactions, including oxidations, hydrogenations, Fischer-Tropsch syntheses, and H2 generation, is also summarized. Furthermore, the effects of nitrogen incorporation on the different catalytic systems are highlighted. PMID:27601266

  2. Copper(I)-catalyzed regioselective addition of nucleophilic silicon across terminal and internal carbon-carbon triple bonds.

    PubMed

    Hazra, Chinmoy K; Fopp, Carolin; Oestreich, Martin

    2014-10-01

    The copper(I) alkoxide-catalyzed release of a silicon-based cuprate reagent from a silicon-boron pronucleophile is applied to the addition across carbon-carbon triple bonds. Commercially available CuBr⋅Me2S was found to be a general precatalyst that secures high regiocontrol for both aryl- and alkyl-substituted terminal as well as internal alkynes. The solvent greatly influences the regioisomeric ratio, favoring the linear regioisomer with terminal acceptors. This facile protocol even allows for the transformation of internal acceptors with remarkable levels of regio- and diastereocontrol.

  3. All-inorganic colloidal silicon nanocrystals—surface modification by boron and phosphorus co-doping

    NASA Astrophysics Data System (ADS)

    Fujii, Minoru; Sugimoto, Hiroshi; Imakita, Kenji

    2016-07-01

    Si nanocrystals (Si-NCs) with extremely heavily B- and P-doped shells are developed and their structural and optical properties are studied. Unlike conventional Si-NCs without doping, B and P co-doped Si-NCs are dispersible in alcohol and water perfectly without any surface functionalization processes. The colloidal solution of co-doped Si-NCs is very stable and no precipitates are observed for more than 5 years. The co-doped colloidal Si-NCs exhibit size-controllable photoluminescence (PL) in a very wide energy range covering 0.85 to 1.85 eV. In this paper, we summarize the structural and optical properties of co-doped Si-NCs and demonstrate that they are a new type of environmentally-friendly nano-light emitter working in aqueous environments in the visible and near infrared (NIR) ranges.

  4. Facile synthesis of phosphorus doped graphitic carbon nitride polymers with enhanced visible-light photocatalytic activity

    SciTech Connect

    Zhang, Ligang; Chen, Xiufang; Guan, Jing; Jiang, Yijun; Hou, Tonggang; Mu, Xindong

    2013-09-01

    Graphical abstract: - Highlights: • P-doped g-C{sub 3}N{sub 4} has been prepared by a one-pot green synthetic approach. • The incorporation of P resulted in favorable textural and electronic properties. • Doping with P enhanced the visible-light photocatalytic activity of g-C{sub 3}N{sub 4}. • A postannealing treatment further enhanced the activity of P-doped g-C{sub 3}N{sub 4}. • Photogenerated holes were the main species responsible for the activity. - Abstract: Phosphorus-doped carbon nitride materials were prepared by a one-pot green synthetic approach using dicyandiamide monomer and a phosphorus containing ionic liquid as precursors. The as-prepared materials were subjected to several characterizations and investigated as metal-free photocatalysts for the degradation of organic pollutants (dyes like Rhodamine B, Methyl orange) in aqueous solution under visible light. Results revealed that phosphorus-doped carbon nitride have a higher photocatalytic activity for decomposing Rhodamine B and Methyl orange in aqueous solution than undoped g-C{sub 3}N{sub 4}, which was attributed to the favorable textural, optical and electronic properties caused by doping with phosphorus heteroatoms into carbon nitride host. A facile postannealing treatment further improved the activity of the photocatalytic system, due to the higher surface area and smaller structural size in the postcalcined catalysts. The phosphorus-doped carbon nitride showed high visible-light photocatalytic activity, making them promising materials for a wide range of potential applications in photochemistry.

  5. Photovoltaic devices based on high density boron-doped single-walled carbon nanotube/n-Si heterojunctions

    SciTech Connect

    Saini, Viney; Li, Zhongrui; Bourdo, Shawn; Kunets, Vasyl P.; Trigwell, Steven; Couraud, Arthur; Rioux, Julien; Boyer, Cyril; Nteziyaremye, Valens; Dervishi, Enkeleda; Biris, Alexandru R.; Salamo, Gregory J.; Viswanathan, Tito; Biris, Alexandru S.

    2011-01-13

    A simple and easily processible photovoltaic device has been developed based on borondoped single-walled carbon nanotubes (B-SWNTs) and n-type silicon (n-Si) heterojunctions. The single-walled carbon nanotubes (SWNTs) were substitutionally doped with boron atoms by thermal annealing, in the presence of B2O3. The samples used for these studies were characterized by Raman spectroscopy, thermal gravimetric analysis (TGA), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS). The fully functional solar cell devices were fabricated by airbrush deposition that generated uniform B-SWNT films on top of the n-Si substrates. The carbon nanotube films acted as exciton-generation sites, charge collection and transportation, while the heterojunctions formed between B-SWNTs and n-Si acted as charge dissociation centers. The current-voltage characteristics in the absence of light and under illumination, as well as optical transmittance spectrum are reported here. It should be noted that the device fabrication process can be made amenable to scalability by depositing direct and uniform films using airbrushing, inkjet printing, or spin-coating techniques.

  6. Photovoltaic devices based on high density boron-doped single-walled carbon nanotube/n-Si heterojunctions

    DOE PAGESBeta

    Saini, Viney; Li, Zhongrui; Bourdo, Shawn; Kunets, Vasyl P.; Trigwell, Steven; Couraud, Arthur; Rioux, Julien; Boyer, Cyril; Nteziyaremye, Valens; Dervishi, Enkeleda; et al

    2011-01-13

    A simple and easily processible photovoltaic device has been developed based on borondoped single-walled carbon nanotubes (B-SWNTs) and n-type silicon (n-Si) heterojunctions. The single-walled carbon nanotubes (SWNTs) were substitutionally doped with boron atoms by thermal annealing, in the presence of B2O3. The samples used for these studies were characterized by Raman spectroscopy, thermal gravimetric analysis (TGA), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS). The fully functional solar cell devices were fabricated by airbrush deposition that generated uniform B-SWNT films on top of the n-Si substrates. The carbon nanotube films acted as exciton-generation sites, charge collection and transportation, whilemore » the heterojunctions formed between B-SWNTs and n-Si acted as charge dissociation centers. The current-voltage characteristics in the absence of light and under illumination, as well as optical transmittance spectrum are reported here. It should be noted that the device fabrication process can be made amenable to scalability by depositing direct and uniform films using airbrushing, inkjet printing, or spin-coating techniques.« less

  7. Aligned carbon nanotube-silicon sheets: a novel nano-architecture for flexible lithium ion battery electrodes.

    PubMed

    Fu, Kun; Yildiz, Ozkan; Bhanushali, Hardik; Wang, Yongxin; Stano, Kelly; Xue, Leigang; Zhang, Xiangwu; Bradford, Philip D

    2013-09-25

    Aligned carbon nanotube sheets provide an engineered scaffold for the deposition of a silicon active material for lithium ion battery anodes. The sheets are low-density, allowing uniform deposition of silicon thin films while the alignment allows unconstrained volumetric expansion of the silicon, facilitating stable cycling performance. The flat sheet morphology is desirable for battery construction.

  8. Silicon carbonate phase formed from carbon dioxide and silica under pressure.

    PubMed

    Santoro, Mario; Gorelli, Federico; Haines, Julien; Cambon, Olivier; Levelut, Claire; Garbarino, Gaston

    2011-05-10

    The discovery of nonmolecular carbon dioxide under high-pressure conditions shows that there are remarkable analogies between this important substance and other group IV oxides. A natural and long-standing question is whether compounds between CO(2) and SiO(2) are possible. Under ambient conditions, CO(2) and SiO(2) are thermodynamically stable and do not react with each other. We show that reactions occur at high pressures indicating that silica can behave in a manner similar to ionic metal oxides that form carbonates at room pressure. A silicon carbonate phase was synthesized by reacting silicalite, a microporous SiO(2) zeolite, and molecular CO(2) that fills the pores, in diamond anvil cells at 18-26 GPa and 600-980 K; the compound was then temperature quenched. The material was characterized by Raman and IR spectroscopy, and synchrotron X-ray diffraction. The experiments reveal unique oxide chemistry at high pressures and the potential for synthesis of a class of previously uncharacterized materials. There are also potential implications for CO(2) segregation in planetary interiors and for CO(2) storage. PMID:21518903

  9. Carbon dioxide laser-induced combustion of extravasated intraocular silicone oil in the eyelid mimicking xanthelasma.

    PubMed

    Santaella, Ricardo M; Ng, John D; Wilson, David J

    2011-01-01

    A 48-year-old woman with a history of retinal detachment repair with vitrectomy, scleral buckling, and silicone oil with subsequent oil removal was referred for unilateral upper eyelid ptosis with edema and overlying skin changes simulating xanthelasma. During surgical excision, a white flare-like plume was noted when the carbon dioxide (CO2) laser was used to make the incisions. The pathology report confirmed silicone oil intrusion in the conjunctiva and upper eyelid. A postoperative in vitro experiment showed that silicone oil was readily ignited by the CO2 laser.

  10. Synthesis of ultrathin nitrogen-doped graphitic carbon nanocages as advanced electrode materials for supercapacitor.

    PubMed

    Tan, Yueming; Xu, Chaofa; Chen, Guangxu; Liu, Zhaohui; Ma, Ming; Xie, Qingji; Zheng, Nanfeng; Yao, Shouzhuo

    2013-03-01

    Synthesis of nitrogen-doped carbons with large surface area, high conductivity, and suitable pore size distribution is highly desirable for high-performance supercapacitor applications. Here, we report a novel protocol for template synthesis of ultrathin nitrogen-doped graphitic carbon nanocages (CNCs) derived from polyaniline (PANI) and their excellent capacitive properties. The synthesis of CNCs involves one-pot hydrothermal synthesis of Mn3O4@PANI core-shell nanoparticles, carbonization to produce carbon coated MnO nanoparticles, and then removal of the MnO cores by acidic treatment. The CNCs prepared at an optimum carbonization temperature of 800 °C (CNCs-800) have regular frameworks, moderate graphitization, high specific surface area, good mesoporosity, and appropriate N doping. The CNCs-800 show high specific capacitance (248 F g(-1) at 1.0 A g(-1)), excellent rate capability (88% and 76% capacitance retention at 10 and 100 A g(-1), respectively), and outstanding cycling stability (~95% capacitance retention after 5000 cycles) in 6 M KOH aqueous solution. The CNCs-800 can also exhibit great pseudocapacitance in 0.5 M H2SO4 aqueous solution besides the large electrochemical double-layer capacitance. The excellent capacitance performance coupled with the facile synthesis of ultrathin nitrogen-doped graphitic CNCs indicates their great application potential in supercapacitors.

  11. Core-shell amorphous silicon-carbon nanoparticles for high performance anodes in lithium ion batteries

    NASA Astrophysics Data System (ADS)

    Sourice, Julien; Bordes, Arnaud; Boulineau, Adrien; Alper, John P.; Franger, Sylvain; Quinsac, Axelle; Habert, Aurélie; Leconte, Yann; De Vito, Eric; Porcher, Willy; Reynaud, Cécile; Herlin-Boime, Nathalie; Haon, Cédric

    2016-10-01

    Core-shell silicon-carbon nanoparticles are attractive candidates as active material to increase the capacity of Li-ion batteries while mitigating the detrimental effects of volume expansion upon lithiation. However crystalline silicon suffers from amorphization upon the first charge/discharge cycle and improved stability is expected in starting with amorphous silicon. Here we report the synthesis, in a single-step process, of amorphous silicon nanoparticles coated with a carbon shell (a-Si@C), via a two-stage laser pyrolysis where decomposition of silane and ethylene are conducted in two successive reaction zones. Control of experimental conditions mitigates silicon core crystallization as well as formation of silicon carbide. Auger electron spectroscopy and scanning transmission electron microscopy show a carbon shell about 1 nm in thickness, which prevents detrimental oxidation of the a-Si cores. Cyclic voltammetry demonstrates that the core-shell composite reaches its maximal lithiation during the first sweep, thanks to its amorphous core. After 500 charge/discharge cycles, it retains a capacity of 1250 mAh.g-1 at a C/5 rate and 800 mAh.g-1 at 2C, with an outstanding coulombic efficiency of 99.95%. Moreover, post-mortem observations show an electrode volume expansion of less than 20% and preservation of the nanostructuration.

  12. A Systematic Search for Structures, Stabilities, Electronic and Magnetic Properties of Silicon Doped Silver Clusters: Comparison with Pure Silver Clusters

    NASA Astrophysics Data System (ADS)

    Zhao, Ya-Ru; Zhang, Hai-Rong; Zhang, Mei-Guang; Zheng, Bao-Bing; Kuang, Xiao-Yu

    2013-05-01

    The geometric structures, stabilities, electronic and magnetic properties of silicon doped silver clusters AgnSi (n = 1 - 9) have been systematically investigated by using meta-generalized gradient approximation (meta-GGA) exchange correlation Tao-Perdew-Staroverov-Scuseria (TPSS) functional. Due to the sp3 hybridization, the lowest energy structures of doped clusters favour the threedimensional structure. The silicon atom prefers to be located at the surface of the host silver clusters. The isomers that correspond to high coordination numbers of the Si-Ag bonds are found to be more stable. By analyzing the relative stabilities, the results show that the quadrangular bipyramid Ag4Si structure is the most stable geometry for the AgnSi clusters. Meanwhile, the fragmentation energies, second-order difference of energies, difference of highest occupied and lowest unoccupied molecular orbital (HOMO-LUMO gaps), and total magnetic moments exhibit pronounced even-odd alternations. The largest hardness difference (2:24 eV) exists between the clusters Ag4Si and Ag5, which illustrates that the corresponding Ag4Si cluster has dramatically enhanced chemical stability.

  13. Doping effects of carbon and titanium on the critical current density of MgB2

    NASA Astrophysics Data System (ADS)

    Shen, T. M.; Li, G.; Cheng, C. H.; Zhao, Y.

    2006-11-01

    MgB2 bulks doped with Ti or/and C were prepared by an in situ solid state reaction method to determine the combined effect of C and Ti doping and to probe the detailed mechanism. The magnetization measurement shows that Mg0.95Ti0.05B1.95C0.05 sample has significantly improved flux pinning compared to the MgB1.95C0.05 sample at 20 K, indicating that C and Ti are largely cooperative in improving the Jc(H) behaviour. No TiC phase was detected in the x-ray diffraction (XRD) patterns. Moreover, the overlap of the (100) peaks of MgB1.95C0.05 and Mg0.95Ti0.05B1.95C0.05 showed that Ti doping does not reduce the amount of C in MgB2. Microstructural analyses revealed that the addition of Ti eliminated the porosity present in the carbon-doped MgB2 pellet, resulting in an improved intergrain connectivity and an increase of effective current pass. Further, MgB2 doped with C and Ti, which mainly consists of spherical grains about 200-300 nm in size, shows an higher grain homogeneity than the C-doped sample, suggesting that the Ti doping in MgB1-xCx has played an important role in obtaining uniform grains.

  14. Unusually high dispersion of nitrogen-doped carbon nanotubes in DNA solution.

    PubMed

    Kim, Jin Hee; Kataoka, Masakazu; Fujisawa, Kazunori; Tojo, Tomohiro; Muramatsu, Hiroyuki; Vega-Díaz, Sofía M; Tristán-López, F; Hayashi, Takuya; Kim, Yoong Ahm; Endo, Morinobu; Terrones, Mauricio; Dresselhaus, Mildred S

    2011-12-01

    The dispersibility in a DNA solution of bundled multiwalled carbon nanotubes (MWCNTs), having different chemical functional groups on the CNT sidewall, was investigated by optical spectroscopy. We observed that the dispersibility of nitrogen (N)-doped MWCNTs was significantly higher than that of pure MWCNTs and MWCNTs synthesized in the presence of ethanol. This result is supported by the larger amount of adsorbed DNA on N-doped MWCNTs, as well as by the higher binding energy established between nucleobases and the N-doped CNTs. Pure MWCNTs are dispersed in DNA solution via van der Waals and hydrophobic interactions; in contrast, the nitrogenated sites within N-doped MWCNTs provided additional sites for interactions that are important to disperse nanotubes in DNA solutions.

  15. Electron transport characteristics of one-dimensional heterojunctions with multi-nitrogen-doped capped carbon nanotubes.

    PubMed

    Lee, Sang Uck; Mizuseki, Hiroshi; Kawazoe, Yoshiyuki

    2010-12-01

    We present a systematic analysis of electron transport characteristics for one-dimensional heterojunctions with two multi-nitrogen-doped (multi-N-doped) capped carbon nanotubes (CNTs) facing one another at different numbers of nitrogen atoms and conformations. Our results show that the modification of the molecular orbitals by the nitrogen dopants generates conducting channels in the designed heterojunctions inducing multi-switching behavior with sequential negative differential resistance (NDR). The NDR behavior significantly depends on the doping site and conformation of doped nitrogen atoms. Furthermore, we provide a clear interpretation for the NDR behavior by a rigid shift model of the HOMO- and LUMO-filtered energy levels in the left and right electrodes under the applied biases. We believe that our results will give an insight into the design and implementation of various electronic logic functions based on CNTs for applications in the field of nanoelectronics.

  16. Tuning electronic properties of carbon nanotubes by Boron and Nitrogen doping

    NASA Astrophysics Data System (ADS)

    Chegel, Raad

    2016-10-01

    The electronic properties of pure and doped carbon nanotubes and NC3-, BC3-, NC- and BC-nanotubes are investigated by using tight binding theory. It was found that applying the external fields and doping change the band gap. The energy gap is reduced by B/N-doping and the reduction value is sensitive to the several parameters such as nanotube diameter and chirality, external field strength, electric field direction, impurity type and concentration. The direct N (B) substitution creates a new band above (below) the Fermi level and leads to creation of n-type (p-type) semiconductor. The external fields modify the band structure and convert the doped nanotube into metal. For both XC and XC3 nanotubes (X=B/N), the gap energy reduction shows identical dependence to electric field and the XC3 nanotubes show more sensitive behavior to electric field rather than XC nanotubes.

  17. Heteroatom-Containing Porous Carbons Derived from Ionic Liquid-Doped Alkali Organic Salts for Supercapacitors.

    PubMed

    Zhu, Jingyue; Xu, Dan; Qian, Wenjing; Zhang, Jinyu; Yan, Feng

    2016-04-13

    A simple strategy for the synthesis of heteroatom-doped porous carbon materials (CMs) via using ionic liquid (IL)-doped alkali organic salts as small molecular precursors is developed. Doping of alkali organic salts (such as sodium glutamate, sodium tartrate, and sodium citrate) with heteroatoms containing ILs (including 1-butyl-3-methylimidazolium chlorine and 3-butyl-4-methythiazolebromination) not only incorporates the heteroatoms into the carbon frameworks but also highly improves the carbonization yield, as compared with that of either alkali organic salts or ILs as precursors. The porous structure of CMs can be tuned by adjusting the feed ratio of ILs. The porous CMs derived from 1-butyl-3-methylimidazolium chlorine-doped sodium glutamate exhibit high charge storage capacity with a specific capacitance of 287 F g(-1) and good stability over 5000 cycles in 6 m KOH at a current density of 1 A g(-1) for supercapacitors. This strategy opens a simple and efficient method for the synthesis of heteroatom-doped porous CMs. PMID:26869577

  18. Surface treatment of silicone rubber by carbon negative-ion implantation for nerve regeneration

    NASA Astrophysics Data System (ADS)

    Tsuji, Hiroshi; Izukawa, Masayoshi; Ikeguchi, Ryosuke; Kakinoki, Ryosuke; Sato, Hiroko; Gotoh, Yasuhito; Ishikawa, Junzo

    2004-07-01

    Surface treatment of silicone rubber by carbon negative ion-implantation was investigated for nerve regeneration by "tubulation". Silicone rubber had its surface property altered to be more hydrophilic by carbon negative-ion implantation. The extracellular matrices of proteins in culture medium adsorbed on the implanted surface rather than unimplanted ones. These improvements in wettability and adsorption properties of proteins were respected to contribute to the regeneration of a nerve-lacking system. An in vivo regeneration test of rat sciatic nerves with silicone-rubber tubes was performed. Using a tube in which the inner surface was implanted with carbon negative ions, the sciatic nerve was regenerated through the inter-stump gap of 15 mm between the proximal and distal nerve stumps and electrical stimulation was transported through the regenerated nerve. Thus, the nerve system was recovered. However, with the unimplanted tube, the nerve was not regenerated at all.

  19. Enhanced light emission from carbon nanotubes integrated in silicon micro-resonator.

    PubMed

    Noury, Adrien; Roux, Xavier Le; Vivien, Laurent; Izard, Nicolas

    2015-08-28

    Single-walled carbon nanotubes are considered a fascinating nanomaterial for photonic applications and are especially promising for efficient light emitters in the telecommunication wavelength range. Furthermore, their hybrid integration with silicon photonic structures makes them an ideal platform to explore their intrinsic properties. Here we report on the strong photoluminescence enhancement from carbon nanotubes integrated in silicon ring resonator circuits under two pumping configurations: surface-illuminated pumping at 735 nm and collinear pumping at 1.26 μm. Extremely efficient rejection of the non-resonant photoluminescence was obtained. In the collinear approach, an emission efficiency enhancement by a factor of 26 has been demonstrated in comparison with the classical pumping scheme. This demonstration paves the way for the development of integrated light sources in silicon based on carbon nanotubes. PMID:26235256

  20. Na-doped hydroxyapatite coating on carbon/carbon composites: Preparation, in vitro bioactivity and biocompatibility

    NASA Astrophysics Data System (ADS)

    Li, Hejun; Zhao, Xueni; Cao, Sheng; Li, Kezhi; Chen, Mengdi; Xu, Zhanwei; Lu, Jinhua; Zhang, Leilei

    2012-12-01

    Na-doped hydroxyapatite (Na-HA) coating was directly prepared onto carbon/carbon (C/C) composites using electrochemical deposition (ECD) and the mean thickness of the coating is approximately 10 ± 2 μm. The formed Na-HA crystals which are Ca-deficient, are rod-like with a hexagonal cross section. The Na/P molar ratios of the coating formed on C/C substrate is 0.097. During the deposition, the Na-HA crystals grow in both radial and longitudinal directions, and faster along the longitudinal direction. The pattern formation of crystal growth leads to dense coating which would help to increase the bonding strength of the coating. The average shear bonding strength of Na-HA coating on C/C is 5.55 ± 0.77 MPa. The in vitro bioactivity of the Na-HA coated C/C composites were investigated by soaking the samples in a simulated body fluid (SBF) for 14 days. The results indicate that the Na-HA coated C/C composites can rapidly induce bone-like apatite nucleation and growth on its surface in SBF. The in vitro cellular biocompatibility tests reveal that the Na-HA coating was better to improve the in vitro biocompatibility of C/C composites compared with hydroxyapatite (HA) coating. It was suggested that the Na-HA coating might be an effective method to improve the surface bioactivity and biocompatibility of C/C composites.

  1. ZIF-Derived Nitrogen-Doped Porous Carbons for Xe Adsorption and Separation

    PubMed Central

    Zhong, Shan; Wang, Qian; Cao, Dapeng

    2016-01-01

    Currently, finding high capacity adsorbents with large selectivity to capture Xe is still a great challenge. In this work, nitrogen-doped porous carbons were prepared by programmable temperature carbonization of zeolitic imidazolate framework-8 (ZIF-8) and ZIF-8/xylitol composite precursors and the resultant samples are marked as Carbon-Z and Carbon-ZX, respectively. Further adsorption measurements indicate that ZIF-derived nitrogen-doped Carbon-ZX exhibits extremely high Xe capacity of 4.42 mmol g−1 at 298 K and 1 bar, which is higher than almost all other pristine MOFs such as CuBTC, Ni/DOBDC, MOF-5 and Al-MIL-53, and even more than three times of the matrix ZIF-8 at similar conditions. Moreover, Carbon-ZX also shows the highest Xe/N2 selectivity about ~120, which is much larger than all other reported MOFs. These remarkable features illustrate that ZIF-derived nitrogen-doped porous carbon is an excellent adsorbent for Xe adsorption and separation at room temperature. PMID:26883471

  2. Supercritical adsorption testing of porous silicon, activated carbon, and zeolite materials

    NASA Astrophysics Data System (ADS)

    Harvey, Brendan

    The supercritical adsorption of methane gas on porous silicon, activated carbon, and zeolite materials was studied. An apparatus that utilizes the volumetric adsorption measurement technique was designed and constructed to conduct the experiments. Activated carbon materials consisted of Norit RX3 Extra, Zorflex FM30K woven activated carbon cloth, and Zorflex FM10 knitted activated carbon cloth. Zeolite materials consisted of 3A, 4A, 5A, and 13X zeolites. Porous silicon materials consisted of stain etched and electrochemically etched porous films, and stain etched porous powder. All adsorption tests were conducted at room temperature (approximately 298 K) and pressures up to approximately 5 MPa. Overall, the Norit RX3 Extra granulated activated carbon produced the highest excess adsorption and effective storage capacities. Effective storage and delivery capacities of 109 and 90 stpmlml were obtained at a pressure of 3.5 MPa and a temperature of approximately 298 K.

  3. Preliminary research on a novel bioactive silicon doped calcium phosphate coating on AZ31 magnesium alloy via electrodeposition.

    PubMed

    Qiu, Xun; Wan, Peng; Tan, Lili; Fan, Xinmin; Yang, Ke

    2014-03-01

    A silicon doped calcium phosphate coating was obtained successfully on AZ31 alloy substrate via pulse electrodeposition. A novel dual-layer structure was observed with a porous lamellar-like and outer block-like apatite layer. In vitro immersion tests were adopted in simulated body fluid within 28 days of immersion. Slow degradation rate obtained from weight loss was observed for the Si-doped Ca-P coating, which was also consistent with the results of electrochemical experiments showing an enhanced corrosion resistance for the coating. Further formation of an apatite-like layer on the surface after immersion proved better integrity and biomineralization performance of the coating. Biological characterization was carried out for viability, proliferation and differentiation of MG63 osteoblast-like cells. The coating showed a good cell growth and an enhanced cell proliferation. Moreover, an increased activity of osteogenic marker ALP was found. All the results demonstrated that the Si-doped calcium phosphate was perspective to be used as a coating for magnesium alloy implants to control the degradation rate and enhance the bioactivity, which would facilitate the rapidity of bone tissue repair.

  4. Bi-Sn alloy catalyst for simultaneous morphology and doping control of silicon nanowires in radial junction solar cells

    SciTech Connect

    Yu, Zhongwei; Lu, Jiawen; Qian, Shengyi; Xu, Jun; Xu, Ling; Wang, Junzhuan; Shi, Yi; Chen, Kunji; Yu, Linwei E-mail: linwei.yu@polytechnique.edu

    2015-10-19

    Low-melting point metals such as bismuth (Bi) and tin (Sn) are ideal choices for mediating a low temperature growth of silicon nanowires (SiNWs) for radial junction thin film solar cells. The incorporation of Bi catalyst atoms leads to sufficient n-type doping in the SiNWs core that exempts the use of hazardous dopant gases, while an easy morphology control with pure Bi catalyst has never been demonstrated so far. We here propose a Bi-Sn alloy catalyst strategy to achieve both a beneficial catalyst-doping and an ideal SiNW morphology control. In addition to a potential of further growth temperature reduction, we show that the alloy catalyst can remain quite stable during a vapor-liquid-solid growth, while providing still sufficient n-type catalyst-doping to the SiNWs. Radial junction solar cells constructed over the alloy-catalyzed SiNWs have demonstrated a strongly enhanced photocurrent generation, thanks to optimized nanowire morphology, and largely improved performance compared to the reference samples based on the pure Bi or Sn-catalyzed SiNWs.

  5. Effect of Silicon Doping in Cvd Diamond Films from Microcrystalline to Nanocrystalline on WC-Co Substrates

    NASA Astrophysics Data System (ADS)

    Zhang, Jianguo; Cui, Yuxiao; Shen, Bin; Sun, Fanghong

    2013-12-01

    Si-doped diamond films with various Si concentrations are deposited on WC-Co substrates using HFCVD method, with the mixture of acetone, tetraethoxysilane (TEOS) and hydrogen as the reactant source. A variety of characterizations, including FE-SEM, AFM, Raman, XRD, surface profilometer and Rockwell indentation, are conducted to systematically investigate the influence of Si incorporation on diamond films. As the Si/C ratio from 0% to 5%, the grain size of as-deposited films decreases from 4 μm to about 50 nm, and the surface roughness reduces from Ra 290 nm to Ra 180 nm. Besides, the intensity ratio of I(111)/I(220) varies from 0.57 to 0, indicating the <110> preferred orientation of the nanocrystalline structure in the 5% doped diamond films. The silicon doping is beneficial for the formation of non-diamond carbide phases in the films, according to the Raman spectra. Moreover, the film adhesion is also improved with the increase of Si/C ratio.

  6. Lithium Storage Properties of a Bioinspired 2-Line Ferrihydrite: A Silicon-Doped, Nanometric, and Amorphous Iron Oxyhydroxide.

    PubMed

    Hashimoto, Hideki; Nishiyama, Yuta; Ukita, Masahiro; Sakuma, Ryo; Nakanishi, Makoto; Fujii, Tatsuo; Takada, Jun

    2015-08-01

    Inspired by a nanometric iron-based oxide material of bacterial origin, silicon (Si)-doped iron oxyhydroxide nanoparticles or 2-line ferrihydrites (2Fhs) were prepared and their lithium (Li) storage properties were investigated. The structures of the Si-doped 2Fhs strongly depended on the Si molar ratio [x = Si/(Fe + Si)] whose long-range atomic ordering gradually vanished as the Si molar ratio increased, with a structural change from nanocrystalline to amorphous at x = 0.30. The most striking properties were observed for the sample with x = 0.30. Over the voltage range of 1.5-4.0 V at a current rate of 500 mA/g, this material exhibited a relatively high reversible capacity of ∼100 mAh/g, which was four times greater than that of the Si-free 2Fh and indicated a good rate capability and cyclability. The large capacity and good rate and cycle performances are presumably because of the amorphous structure and the strong and stabilizing covalent Si-O bonds, respectively. The minor amount of Si(4+) in the structure of the iron oxyhydroxides is considered to improve the electrochemical properties. Use of more appropriate doping elements and fabrication of more appropriate nanostructures could drastically improve the Li storage properties of the developed bioinspired material.

  7. Bi-Sn alloy catalyst for simultaneous morphology and doping control of silicon nanowires in radial junction solar cells

    NASA Astrophysics Data System (ADS)

    Yu, Zhongwei; Lu, Jiawen; Qian, Shengyi; Misra, Soumyadeep; Yu, Linwei; Xu, Jun; Xu, Ling; Wang, Junzhuan; Shi, Yi; Chen, Kunji; Roca i Cabarrocas, Pere

    2015-10-01

    Low-melting point metals such as bismuth (Bi) and tin (Sn) are ideal choices for mediating a low temperature growth of silicon nanowires (SiNWs) for radial junction thin film solar cells. The incorporation of Bi catalyst atoms leads to sufficient n-type doping in the SiNWs core that exempts the use of hazardous dopant gases, while an easy morphology control with pure Bi catalyst has never been demonstrated so far. We here propose a Bi-Sn alloy catalyst strategy to achieve both a beneficial catalyst-doping and an ideal SiNW morphology control. In addition to a potential of further growth temperature reduction, we show that the alloy catalyst can remain quite stable during a vapor-liquid-solid growth, while providing still sufficient n-type catalyst-doping to the SiNWs. Radial junction solar cells constructed over the alloy-catalyzed SiNWs have demonstrated a strongly enhanced photocurrent generation, thanks to optimized nanowire morphology, and largely improved performance compared to the reference samples based on the pure Bi or Sn-catalyzed SiNWs.

  8. Bismuth-catalyzed and doped silicon nanowires for one-pump-down fabrication of radial junction solar cells.

    PubMed

    Yu, Linwei; Fortuna, Franck; O'Donnell, Benedict; Jeon, Taewoo; Foldyna, Martin; Picardi, Gennaro; Roca i Cabarrocas, Pere

    2012-08-01

    Silicon nanowires (SiNWs) are becoming a popular choice to develop a new generation of radial junction solar cells. We here explore a bismuth- (Bi-) catalyzed growth and doping of SiNWs, via vapor-liquid-solid (VLS) mode, to fabricate amorphous Si radial n-i-p junction solar cells in a one-pump-down and low-temperature process in a single chamber plasma deposition system. We provide the first evidence that catalyst doping in the SiNW cores, caused by incorporating Bi catalyst atoms as n-type dopant, can be utilized to fabricate radial junction solar cells, with a record open circuit voltage of V(oc) = 0.76 V and an enhanced light trapping effect that boosts the short circuit current to J(sc) = 11.23 mA/cm(2). More importantly, this bi-catalyzed SiNW growth and doping strategy exempts the use of extremely toxic phosphine gas, leading to significant procedure simplification and cost reduction for building radial junction thin film solar cells. PMID:22822909

  9. Encapsulating micro-nano Si/SiOx into conjugated nitrogen-doped carbon as binder-free monolithic anodes for advanced lithium ion batteries

    NASA Astrophysics Data System (ADS)

    Wang, Jing; Zhou, Meijuan; Tan, Guoqiang; Chen, Shi; Wu, Feng; Lu, Jun; Amine, Khalil

    2015-04-01

    Silicon monoxide, a promising silicon-based anode candidate for lithium-ion batteries, has recently attracted much attention for its high theoretical capacity, good cycle stability, low cost, and environmental benignity. Currently, the most critical challenge is to improve its low initial coulombic efficiency and significant volume changes during the charge-discharge processes. Herein, we report a binder-free monolithic electrode structure based on directly encapsulating micro-nano Si/SiOx particles into conjugated nitrogen-doped carbon frameworks to form monolithic, multi-core, cross-linking composite matrices. We utilize micro-nano Si/SiOx reduced by high-energy ball-milling SiO as active materials, and conjugated nitrogen-doped carbon formed by the pyrolysis of polyacrylonitrile both as binders and conductive agents. Owing to the high electrochemical activity of Si/SiOx and the good mechanical resiliency of conjugated nitrogen-doped carbon backbones, this specific composite structure enhances the utilization efficiency of SiO and accommodates its large volume expansion, as well as its good ionic and electronic conductivity. The annealed Si/SiOx/polyacrylonitrile composite electrode exhibits excellent electrochemical properties, including a high initial reversible capacity (2734 mA h g-1 with 75% coulombic efficiency), stable cycle performance (988 mA h g-1 after 100 cycles), and good rate capability (800 mA h g-1 at 1 A g-1 rate). Because the composite is naturally abundant and shows such excellent electrochemical performance, it is a promising anode candidate material for lithium-ion batteries. The binder-free monolithic architectural design also provides an effective way to prepare other monolithic electrode materials for advanced lithium-ion batteries.

  10. Tungsten nitride nanocrystals on nitrogen-doped carbon black as efficient electrocatalysts for oxygen reduction reactions.

    PubMed

    Dong, Youzhen; Li, Jinghong

    2015-01-11

    The direct synthesis of tungsten nitride (WN) nanoparticles on nitrogen-doped carbon black (N-carbon black) was achieved through facile nucleation and growth of WN nanoparticles on simultaneously generated N-carbon black under ammonia annealing. As a noble-metal-free catalyst, the WN/N-carbon black hybrid exhibited excellent performance in ORR, coupled with superior methanol tolerance and long-term stability in comparison to commercial Pt/C catalysts, through an efficient four-electron-dominant ORR process.

  11. Tungsten nitride nanocrystals on nitrogen-doped carbon black as efficient electrocatalysts for oxygen reduction reactions.

    PubMed

    Dong, Youzhen; Li, Jinghong

    2015-01-11

    The direct synthesis of tungsten nitride (WN) nanoparticles on nitrogen-doped carbon black (N-carbon black) was achieved through facile nucleation and growth of WN nanoparticles on simultaneously generated N-carbon black under ammonia annealing. As a noble-metal-free catalyst, the WN/N-carbon black hybrid exhibited excellent performance in ORR, coupled with superior methanol tolerance and long-term stability in comparison to commercial Pt/C catalysts, through an efficient four-electron-dominant ORR process. PMID:25413157

  12. Flexible field emission of nitrogen-doped carbon nanotubes/reduced graphene hybrid films.

    PubMed

    Lee, Duck Hyun; Lee, Jin Ah; Lee, Won Jong; Kim, Sang Ouk

    2011-01-01

    The outstanding flexible field emission properties of carbon hybrid films made of vertically aligned N-doped carbon nanotubes grown on mechanically compliant reduced graphene films are demonstrated. The bottom-reduced graphene film substrate enables the conformal coating of the hybrid film on flexible device geometry and ensures robust mechanical and electrical contact even in a highly deformed state. The field emission properties are precisely examined in terms of the control of the bending radius, the N-doping level, and the length or wall-number of the carbon nanotubes and analyzed with electric field simulations. This high-performance flexible carbon field emitter is potentially useful for diverse, flexible field emission devices.

  13. Controlling the volumetric parameters of nitrogen-doped carbon nanotube cups

    NASA Astrophysics Data System (ADS)

    Allen, Brett L.; Keddie, Matthew B.; Star, Alexander

    2010-07-01

    Analogous to multiwalled carbon nanotubes, nitrogen-doped carbon nanotube cups (NCNCs) have been synthesized with defined volumetric parameters (diameter and segment lengths) by controlling the catalyst particle size and the concentration of nitrogen precursor utilized in the chemical vapor deposition (CVD) reaction, allowing for tailored interior cavity space of cross-linked NCNCs, i.e. nanocapsules.Analogous to multiwalled carbon nanotubes, nitrogen-doped carbon nanotube cups (NCNCs) have been synthesized with defined volumetric parameters (diameter and segment lengths) by controlling the catalyst particle size and the concentration of nitrogen precursor utilized in the chemical vapor deposition (CVD) reaction, allowing for tailored interior cavity space of cross-linked NCNCs, i.e. nanocapsules. Electronic supplementary information (ESI) available: AFM and DLS of FeNPs, high-resolution TEM and EELS analysis, and TEM of statistical distributions. See DOI: 10.1039/c0nr00043d

  14. Characteristics of W Doped Nanocrystalline Carbon Films Prepared by Unbalanced Magnetron Sputtering.

    PubMed

    Park, Yong Seob; Park, Chul Min; Kim, Nam-Hoon; Kim, Jae-Moon

    2016-05-01

    Nanocrystalline tungsten doped carbon (WC) films were prepared by unbalanced magnetron sputtering. Tungsten was used as the doping material in carbon thin films with the aim of application as a contact strip in an electric railway. The structural, physical, and electrical properties of the fabricated WC films with various DC bias voltages were investigated. The films had a uniform and smooth surface. Hardness and frication characteristics of the films were improved, and the resistivity and sheet resistance decreased with increasing negative DC bias voltage. These results are associated with the nanocrystalline WC phase and sp(2) clusters in carbon networks increased by ion bombardment enhanced with increasing DC bias voltage. Consequently, the increase of sp(2) clusters containing WC nanocrystalline in the carbon films is attributed to the improvement in the physical and electrical properties.

  15. Characteristics of W Doped Nanocrystalline Carbon Films Prepared by Unbalanced Magnetron Sputtering.

    PubMed

    Park, Yong Seob; Park, Chul Min; Kim, Nam-Hoon; Kim, Jae-Moon

    2016-05-01

    Nanocrystalline tungsten doped carbon (WC) films were prepared by unbalanced magnetron sputtering. Tungsten was used as the doping material in carbon thin films with the aim of application as a contact strip in an electric railway. The structural, physical, and electrical properties of the fabricated WC films with various DC bias voltages were investigated. The films had a uniform and smooth surface. Hardness and frication characteristics of the films were improved, and the resistivity and sheet resistance decreased with increasing negative DC bias voltage. These results are associated with the nanocrystalline WC phase and sp(2) clusters in carbon networks increased by ion bombardment enhanced with increasing DC bias voltage. Consequently, the increase of sp(2) clusters containing WC nanocrystalline in the carbon films is attributed to the improvement in the physical and electrical properties. PMID:27483857

  16. Radiation effects in gate-all-around silicon nanowire MOSFETs and carbon nanotube p-n diodes

    NASA Astrophysics Data System (ADS)

    Comfort, Everett S.

    The scaling of MOSFETs has resulted in short channel effects that increase their power consumption above acceptable levels. In order to lower the power dissipation, new device designs and materials are being considered. For example, multiple-gate MOSFETs, including the gate-all-around silicon nanowire (GAA SiNW) MOSFET, are known to reduce short channel effects. Furthermore, new high-mobility channel materials such as single-walled carbon nanotubes (SWNTs) can be integrated to allow for further scaling of the supply voltage, again aiding in lowering power dissipation. GAA SiNW MOSFETs and SWNTs also have attributes attractive for high radiation. For gate-all-around transistors, their unique geometry isolates the channel from any thick insulators that may cause degradation from radiation exposure. As a result, the gate-all-around transistor demonstrates a high tolerance to ionizing radiation, shown in this work. For SWNTs, their small size, with diameters on the order of 1nm, results in a low damage cross-section. This is confirmed by measurements of radiation induced defects in SWNTs using electrostatically doped p-n diodes, where low defect creation is seen even at high proton fluences. As such, the work within this thesis confirms that both the GAA SiNW MOSFET and SWNTs show a high resistance to damaging effects of radiation. Additionally, work towards understanding the band gap in SWNTs, an important physical property for any semiconductor, is presented. Towards understanding the intrinsic band gap of a SWNT, measurements are conducted over a wide range of doping concentrations. It is found that the band gap can reduce by approximately 50% at the highest doping concentrations tested, illustrating the significance of band gap renormalization in SWNTs.

  17. A nitrogen-doped graphene/carbon nanotube nanocomposite with synergistically enhanced electrochemical activity.

    PubMed

    Chen, Ping; Xiao, Tian-Yuan; Qian, Yu-Hong; Li, Shan-Shan; Yu, Shu-Hong

    2013-06-18

    A new kind of nitrogen-doped graphene/carbon nanotube nanocomposite can be synthesized by a facile hydrothermal process under mild conditions, which exhibits synergistically enhanced electrochemical activity for the oxygen reduction reaction. This research provides a new route to access a metal-free electrocatalyst with high activity under mild conditions.

  18. Metalorganic Chemical Vapor Deposition of Ruthenium-Doped Diamond like Carbon Films

    NASA Technical Reports Server (NTRS)

    Sunkara, M. K.; Ueno, M.; Lian, G.; Dickey, E. C.

    2001-01-01

    We investigated metalorganic precursor deposition using a Microwave Electron Cyclotron Resonance (ECR) plasma for depositing metal-doped diamondlike carbon films. Specifically, the deposition of ruthenium doped diamondlike carbon films was investigated using the decomposition of a novel ruthenium precursor, Bis(ethylcyclopentadienyl)-ruthenium (Ru(C5H4C2H5)2). The ruthenium precursor was introduced close to the substrate stage. The substrate was independently biased using an applied RF power. Films were characterized using Fourier Transform Infrared Spectroscopy (FTIR), Transmission Electron Microscopy (TEM) and Four Point Probe. The conductivity of the films deposited using ruthenium precursor showed strong dependency on the deposition parameters such as pressure. Ruthenium doped sample showed the presence of diamond crystallites with an average size of approx. 3 nm while un-doped diamondlike carbon sample showed the presence of diamond crystallites with an average size of 11 nm. TEM results showed that ruthenium was atomically dispersed within the amorphous carbon network in the films.

  19. N-doped graphene natively grown on hierarchical ordered porous carbon for enhanced oxygen reduction.

    PubMed

    Liang, Ji; Du, Xin; Gibson, Christopher; Du, Xi Wen; Qiao, Shi Zhang

    2013-11-20

    A novel nitrogen doped hybrid material composed of in situ-formed graphene natively grown on hierarchical ordered porous carbon is prepared, which successfully combines the advantages of both materials, such as high surface area, high mass transfer, and high conductivity. The outstanding structural properties of the resultant material render it an excellent metal-free catalyst for electrochemical oxygen reduction. PMID:23963824

  20. Li2S encapsulated by nitrogen-doped carbon for lithium sulfur batteries

    DOE PAGESBeta

    Chen, Lin; Liu, Yuzi; Ashuri, Maziar; Liu, Caihong; Shaw, Leon L.

    2014-09-26

    Using high-energy ball milling of the Li2S plus carbon black mixture followed by carbonization of pyrrole, we have established a facile approach to synthesize Li2S-plus-C composite particles of average size 400 nm, encapsulated by a nitrogen-doped carbon shell. Such an engineered core–shell structure exhibits an ultrahigh initial discharge specific capacity (1029 mAh/g), reaching 88% of the theoretical capacity (1,166 mAh/g of Li2S) and thus offering the highest utilization of Li2S in the cathode among all of the reported works for the encapsulated Li2S cathodes. This Li2S/C composite core with a nitrogen-doped carbon shell can still retain 652 mAh/g after prolongedmore » 100 cycles. These superior properties are attributed to the nitrogen-doped carbon shell that can improve the conductivity to enhance the utilization of Li2S in the cathode. As a result, fine particle sizes and the presence of carbon black within the Li2S core may also play a role in high utilization of Li2S in the cathode.« less

  1. Measurements of Increased Enthalpies of Adsorption for Boron-Doped Activated Carbons

    NASA Astrophysics Data System (ADS)

    Gillespie, Andrew; Beckner, Matthew; Chada, Nagaraju; Schaeperkoetter, Joseph; Singh, Anupam; Lee, Mark; Wexler, Carlos; Burress, Jacob; Pfeifer, Peter

    2013-03-01

    Boron-doping of activated carbons has been shown to increase the enthalpies of adsorption for hydrogen as compared to their respective undoped precursors (>10kJ/mol compared to ca. 5kJ/mol). This has brought significant interest to boron-doped carbons for their potential to improve hydrogen storage. Boron-doped activated carbons have been produced using a process involving the deposition of decaborane (B10H14) and high-temperature annealing resulting in boron contents up to 15%. In this talk, we will present a systematic study of the effect that boron content has on the samples' structure, hydrogen sorption, and surface chemistry. Measurements have shown a significant increase in the areal hydrogen excess adsorption and binding energy. Experimental enthalpies of adsorption will be presented for comparison to theoretical predictions. Additionally, samples have been characterized by thermal gravimetric analysis, gas chromatography-mass spectroscopy, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy. TGA and GC-MS results investigated the decomposition of the decaborane in the carbon. Boron-carbon bonds are shown in the FTIR and XPS spectra, indicating that boron has been incorporated into the carbon matrix. Work supported by DOE-EERE, Award No. DE-FG36-08GO18142

  2. First-Principles Study of Electronic Structure of Type I Hybrid Carbon-Silicon Clathrates

    NASA Astrophysics Data System (ADS)

    Chan, Kwai S.; Peng, Xihong

    2016-08-01

    A new class of type I hybrid carbon-silicon clathrates has been designed using computational methods by substituting some of the Si atoms in the silicon clathrate framework with carbon atoms. In this work, the electronic structure of hybrid carbon-silicon clathrates with and without alkaline or alkaline-earth metal guest atoms has been computed within the density functional theory framework. The theoretical calculations indicate that a small number of carbon substitutions in the Si46 framework slightly reduces the density of states (DOS) near the band edge and narrows the bandgap of carbon-silicon clathrates. Weak hybridization of the conduction band occurs when alkaline metal (Li, Na, K) atoms are inserted into the structure, while strong hybridization of the conduction band occurs when alkaline-earth metal (Mg, Ca, Ba) atoms are inserted into the hybrid structure. Empty C y Si46- y clathrates within the composition range of 2 ≤ y ≤ 15 can be tuned to exhibit indirect bandgaps of 1.5 eV or less, and may be considered as potential electronic materials.

  3. Fast Conversion of Ionic Liquids and Poly(Ionic Liquid)s into Porous Nitrogen-Doped Carbons in Air

    PubMed Central

    Men, Yongjun; Ambrogi, Martina; Han, Baohang; Yuan, Jiayin

    2016-01-01

    Ionic liquids and poly(ionic liquid)s have been successfully converted into nitrogen-doped porous carbons with tunable surface area up to 1200 m2/g at high temperatures in air. Compared to conventional carbonization process conducted under inert gas to produce nitrogen-doped carbons, the new production method was completed in a rather shorter time without noble gas protection. PMID:27070588

  4. Electrodeposition and characterization of Pd nanoparticles doped amorphous hydrogenated carbon films

    NASA Astrophysics Data System (ADS)

    Yu, Yuanlie; Zhang, Junyan

    2009-11-01

    Palladium (0) nanoparticles incorporated hydrogenated amorphous carbon (Pd/a-C:H) films were synthesized on single crystal silicon (100) substrates by electrochemical deposition route using methanol and camphor as carbon source, and Pd nanoparticles as dopant. The characterization results indicate that Pd nanocrystalline particles with diameter in the range of 1-5 nm dispersed in the amorphous carbon matrix. Compared with pure a-C:H films, the introduction of Pd nanoparticles didn't change the structure of carbon films. At the end, the growth mechanism of the Pd/a-C:H composite films was discussed.

  5. Ho(3+)-doped nanophase glass ceramics for efficiency enhancement in silicon solar cells.

    PubMed

    Lahoz, Fernando

    2008-12-15

    Currently Er(3+)-doped fluorides are being used as upconversion phosphors to enhance the efficiency of Si solar cells, to our knowledge. However, this enhancement is strongly limited owing to the small solar spectral range around 1540 nm that is used. We demonstrate that Ho(3+)-doped oxyfluoride glass ceramics are adequate to enlarge the Si sub-bandgap region around 1170 nm that can be transformed into higher-energy photons, showing an upconversion efficiency 2 orders of magnitude higher than the precursor glass. As these materials are transparent at 1540 nm, they can be used complementarily with Er(3+)-doped phosphors for the same purpose.

  6. p+-doping analysis of laser fired contacts for silicon solar cells by Kelvin probe force microscopy

    NASA Astrophysics Data System (ADS)

    Ebser, J.; Sommer, D.; Fritz, S.; Schiele, Y.; Hahn, G.; Terheiden, B.

    2016-03-01

    Local rear contacts for silicon passivated emitter and rear contact solar cells can be established by point-wise treating an Al layer with laser radiation and thereby establishing an electrical contact between Al and Si bulk through the dielectric passivation layer. In this laser fired contacts (LFC) process, Al can establish a few μm thick p+-doped Si region below the metal/Si interface and forms in this way a local back surface field which reduces carrier recombination at the contacts. In this work, the applicability of Kelvin probe force microscopy (KPFM) to the investigation of LFCs considering the p+-doping distribution is demonstrated. The method is based on atomic force microscopy and enables the evaluation of the lateral 2D Fermi-level characteristics at sub-micrometer resolution. The distribution of the electrical potential and therefore the local hole concentration in and around the laser fired region can be measured. KPFM is performed on mechanically polished cross-sections of p+-doped Si regions formed by the LFC process. The sample preparation is of great importance because the KPFM signal is very surface sensitive. Furthermore, the measurement is responsive to sample illumination and the height of the applied voltage between tip and sample. With other measurement techniques like micro-Raman spectroscopy, electrochemical capacitance-voltage, and energy dispersive X-ray analysis, a high local hole concentration in the range of 1019 cm-3 is demonstrated in the laser fired region. This provides, in combination with the high spatial resolution of the doping distribution measured by KPFM, a promising approach for microscopic understanding and further optimization of the LFC process.

  7. Composites of polyvinyl alcohol and carbon (coils, undoped and nitrogen doped multiwalled carbon nanotubes) as ethanol, methanol and toluene vapor sensors.

    PubMed

    Greenshields, Márcia W C C; Hümmelgen, Ivo A; Mamo, Messai A; Shaikjee, Ahmed; Mhlanga, Sabelo D; van Otterlo, Willem A L; Coville, Neil J

    2011-11-01

    We investigate the chemical sensing behavior of composites prepared with polyvinyl alcohol and carbon materials (undoped multiwalled carbon nanotubes, nitrogen-doped multiwalled carbon nanotubes and carbon nanocoils). We determine the sensitivity of thin films of these composites for ethanol, methanol and toluene vapor, comparing their conductance and capacitance responses. The composite that exhibits highest sensitivity depends on specific vapor, vapor concentration and measured electrical response, showing that the interactivity of the carbon structure with chemical species depend on structural specificities of the carbon structure and doping.

  8. Effect of nitrogen post-doping on a commercial platinum-ruthenium/carbon anode catalyst

    NASA Astrophysics Data System (ADS)

    Corpuz, April R.; Wood, Kevin N.; Pylypenko, Svitlana; Dameron, Arrelaine A.; Joghee, Prabhuram; Olson, Tim S.; Bender, Guido; Dinh, Huyen N.; Gennett, Thomas; Richards, Ryan M.; O'Hayre, Ryan

    2014-02-01

    This work investigates the effects of after-the-fact chemical modification of a state-of-the-art commercial carbon-supported PtRu catalyst for direct methanol fuel cells (DMFCs). A commercial PtRu/C (JM HiSPEC-10000) catalyst is post-doped with nitrogen by ion-implantation, where "post-doped" denotes nitrogen doping after metal is carbon-supported. Composition and performance of the PtRu/C catalyst post-modified with nitrogen at several dosages are evaluated using X-ray photoelectron spectroscopy (XPS), rotating disk electrode (RDE), and membrane electrode assemblies (MEAs) for DMFC. Overall, implantation at high dosage results in 16% higher electrochemical surface area and enhances performance, specifically in the mass transfer region. Rotating disk electrode (RDE) results show that after 5000 cycles of accelerated durability testing to high potential, the modified catalyst retains 34% more electrochemical surface area (ECSA) than the unmodified catalyst. The benefits of nitrogen post-doping are further substantiated by DMFC durability studies (carried out for 425 h), where the MEA with the modified catalyst exhibits higher surface area and performance stability in comparison to the MEA with unmodified catalyst. These results demonstrate that post-doping of nitrogen in a commercial PtRu/C catalyst is an effective approach, capable of improving the performance of available best-in-class commercial catalysts.

  9. Low-cost carbon-silicon nanocomposite anodes for lithium ion batteries

    NASA Astrophysics Data System (ADS)

    Badi, Nacer; Erra, Abhinay Reddy; Hernandez, Francisco C. Robles; Okonkwo, Anderson O.; Hobosyan, Mkhitar; Martirosyan, Karen S.

    2014-07-01

    The specific energy of the existing lithium ion battery cells is limited because intercalation electrodes made of activated carbon (AC) materials have limited lithium ion storage capacities. Carbon nanotubes, graphene, and carbon nanofibers are the most sought alternatives to replace AC materials but their synthesis cost makes them highly prohibitive. Silicon has recently emerged as a strong candidate to replace existing graphite anodes due to its inherently large specific capacity and low working potential. However, pure silicon electrodes have shown poor mechanical integrity due to the dramatic expansion of the material during battery operation. This results in high irreversible capacity and short cycle life. We report on the synthesis and use of carbon and hybrid carbon-silicon nanostructures made by a simplified thermo-mechanical milling process to produce low-cost high-energy lithium ion battery anodes. Our work is based on an abundant, cost-effective, and easy-to-launch source of carbon soot having amorphous nature in combination with scrap silicon with crystalline nature. The carbon soot is transformed in situ into graphene and graphitic carbon during mechanical milling leading to superior elastic properties. Micro-Raman mapping shows a well-dispersed microstructure for both carbon and silicon. The fabricated composites are used for battery anodes, and the results are compared with commercial anodes from MTI Corporation. The anodes are integrated in batteries and tested; the results are compared to those seen in commercial batteries. For quick laboratory assessment, all electrochemical cells were fabricated under available environment conditions and they were tested at room temperature. Initial electrochemical analysis results on specific capacity, efficiency, and cyclability in comparison to currently available AC counterpart are promising to advance cost-effective commercial lithium ion battery technology. The electrochemical performance observed for

  10. Low-cost carbon-silicon nanocomposite anodes for lithium ion batteries

    PubMed Central

    2014-01-01

    The specific energy of the existing lithium ion battery cells is limited because intercalation electrodes made of activated carbon (AC) materials have limited lithium ion storage capacities. Carbon nanotubes, graphene, and carbon nanofibers are the most sought alternatives to replace AC materials but their synthesis cost makes them highly prohibitive. Silicon has recently emerged as a strong candidate to replace existing graphite anodes due to its inherently large specific capacity and low working potential. However, pure silicon electrodes have shown poor mechanical integrity due to the dramatic expansion of the material during battery operation. This results in high irreversible capacity and short cycle life. We report on the synthesis and use of carbon and hybrid carbon-silicon nanostructures made by a simplified thermo-mechanical milling process to produce low-cost high-energy lithium ion battery anodes. Our work is based on an abundant, cost-effective, and easy-to-launch source of carbon soot having amorphous nature in combination with scrap silicon with crystalline nature. The carbon soot is transformed in situ into graphene and graphitic carbon during mechanical milling leading to superior elastic properties. Micro-Raman mapping shows a well-dispersed microstructure for both carbon and silicon. The fabricated composites are used for battery anodes, and the results are compared with commercial anodes from MTI Corporation. The anodes are integrated in batteries and tested; the results are compared to those seen in commercial batteries. For quick laboratory assessment, all electrochemical cells were fabricated under available environment conditions and they were tested at room temperature. Initial electrochemical analysis results on specific capacity, efficiency, and cyclability in comparison to currently available AC counterpart are promising to advance cost-effective commercial lithium ion battery technology. The electrochemical performance observed for

  11. Porous Silicon Coated with Ultrathin Diamond-Like Carbon Film Cathodes

    SciTech Connect

    Evtukh, A A; Litovchenko, V G; Litvin, Y M; Fedin, D V; Rassamakin, Y V; Sarikov, A V; Chakhovskoi, A G; Felter, T E

    2001-04-01

    The main requirements to electron field emission cathodes are their efficiency, stability and uniformity. In this work we combined the properties of porous silicon layers and diamond-like carbon (DLC) film to obtain emission cathodes with improved parameters. The layered structures of porous silicon and DLC film were formed both on flat n-Si surface and silicon tips created by chemical etching. The conditions of the anodic and stain etching of silicon in HF containing solution under the illumination have been widely changed. The influence of thin ({le} 10nm) DLC film coating of the porous silicon layer on electron emission has been investigated. The parameters of emission efficiency such as field enhancement coefficient, effective emission areas and threshold voltages have been estimated from current-voltage dependencies to compare and characterize different layered structures. The improvement of the emission efficiency of silicon tip arrays with porous layers coated with thin DLC film has been observed. These silicon-based structures are promising for flat panel display applications.

  12. Phosphorus and phosphorus-nitrogen doped carbon nanotubes for ultrasensitive and selective molecular detection.

    PubMed

    Cruz-Silva, Eduardo; Lopez-Urias, Florentino; Munoz-Sandoval, Emilio; Sumpter, Bobby G; Terrones, Humberto; Charlier, Jean-Christophe; Meunier, Vincent; Terrones, Mauricio

    2011-03-01

    A first-principles approach is used to establish that substitutional phosphorus atoms within carbon nanotubes strongly modify the chemical properties of the surface, thus creating highly localized sites with specific affinity towards acceptor molecules. Phosphorus-nitrogen co-dopants within the tubes have a similar effect for acceptor molecules, but the P-N bond can also accept charge, resulting in affinity towards donor molecules. This molecular selectivity is illustrated in CO and NH3 adsorbed on PN-doped nanotubes, O2 on P-doped nanotubes, and NO2 and SO2 on both P- and PN-doped nanotubes. The adsorption of different chemical species onto the doped nanotubes modifies the dopant-induced localized states, which subsequently alter the electronic conductance. Although SO2 and CO adsorptions cause minor shifts in electronic conductance, NH3, NO2, and O2 adsorptions induce the suppression of a conductance dip. Conversely, the adsorption of NO2 on PN-doped nanotubes is accompanied with the appearance of an additional dip in conductance, correlated with a shift of the existing ones. Overall these changes in electric conductance provide an efficient way to detect selectively the presence of specific molecules. Additionally, the high oxidation potential of the P-doped nanotubes makes them good candidates for electrode materials in hydrogen fuel cells.

  13. Long-range resonant effects on electronic transport of nitrogen-doped carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Khalfoun, Hafid; Lambin, Philippe; Henrard, Luc

    2014-01-01

    The electronic transport properties of ordered and disordered nitrogen-doped metallic carbon nanotubes with long-range correlation are studied numerically with a tight-binding model. Doping with both translational (axial) and screw symmetry are considered. In periodic defective systems, when axial doping is considered, two classes of electronic transport responses are obtained. One quantum conductance plateau settles down around the defect energy only when the period of the structure is a multiple of the Fermi wavelength 3d0 (d0 being the period of the perfect armchair host nanotube), because the Bloch-like propagating modes survive. Otherwise, a conduction gap is predicted. For the screw doping configuration, the same resonant electronic transport is observed when the rotational angle fulfills one of the rotational symmetries of the perfect nanotube. Furthermore, for disordered systems, the conventional Anderson localization is partially prohibited around the defect energy for particular axial and circular random doping configurations. These conclusions are valid for both armchair and chiral metallic nanotubes and should remain true for other modifications of the nanotube by covalent or noncovalent doping.

  14. Phosphorus and phosphorus nitrogen doped carbon nanotubes for ultrasensitive and selective molecular detection

    SciTech Connect

    Cruz Silva, Eduardo; Lopez, Florentino; Munoz-Sandoval, Emilio; Sumpter, Bobby G; Terrones Maldonado, Humberto; Charlier, Jean Christophe; Meunier, Vincent; Terrones Maldonado, Mauricio

    2011-01-01

    A first-principles approach is used to establish that substitutional phosphorus atoms within carbon nanotubes strongly modify the chemical properties of the surface, thus creating highly localized sites with specific affinity towards acceptor molecules. Phosphorus nitrogen co-dopants within the tubes have a similar effect for acceptor molecules, but the P N bond can also accept charge, resulting in affinity towards donor molecules. This molecular selectivity is illustrated in CO and NH3 adsorbed on PN-doped nanotubes, O2 on P-doped nanotubes, and NO2 and SO2 on both P- and PN-doped nanotubes. The adsorption of different chemical species onto the doped nanotubes modifies the dopant-induced localized states, which subsequently alter the electronic conductance. Although SO2 and CO adsorptions cause minor shifts in electronic conductance, NH3, NO2, and O2 adsorptions induce the suppression of a conductance dip. Conversely, the adsorption of NO2 on PN-doped nanotubes is accompanied with the appearance of an additional dip in conductance, correlated with a shift of the existing ones. Overall these changes in electric conductance provide an efficient way to detect selectively the presence of specific molecules. Additionally, the high oxidation potential of the P-doped nanotubes makes them good candidates for electrode materials in hydrogen fuel cells.

  15. Carbon doping induced peculiar transport properties of boron nitride nanoribbons p-n junctions

    SciTech Connect

    Liu, N.; Gao, G. Y.; Zhu, S. C.; Ni, Y.; Wang, S. L.; Yao, K. L.; Liu, J. B.

    2014-07-14

    By applying nonequilibrium Green's function combined with density functional theory, we investigate the electronic transport properties of carbon-doped p-n nanojunction based on hexagonal boron nitride armchair nanoribbons. The calculated I-V curves show that both the center and edge doping systems present obvious negative differential resistance (NDR) behavior and excellent rectifying effect. At low positive bias, the edge doping systems possess better NDR performance with larger peak-to-valley ratio (∼10{sup 5}), while at negative bias, the obtained peak-to-valley ratio for both of the edge and center doping systems can reach the order of 10{sup 7}. Meanwhile, center doping systems present better rectifying performance than the edge doping ones, and giant rectification ratio up to 10{sup 6} can be obtained in a wide bias range. These outstanding transport properties are explained by the evolution of the transmission spectra and band structures with applied bias, together with molecular projected self-consistent Hamiltonian eigenvalues and eigenstates.

  16. Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiency

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.; Terhune, R. W.; Fattahi, Masoud; Tseng, Hsin-Fu

    1992-01-01

    Low-temperature silicon molecular beam epitaxy is used to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450 C, contained a boron delta-layer with surface density of about 2 x 10 exp 14/sq cm. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.

  17. Iron-boron pairing kinetics in illuminated p-type and in boron/phosphorus co-doped n-type silicon

    NASA Astrophysics Data System (ADS)

    Möller, Christian; Bartel, Til; Gibaja, Fabien; Lauer, Kevin

    2014-07-01

    Iron-boron (FeB) pairing is observed in the n-type region of a boron and phosphorus co-doped silicon sample which is unexpected from the FeB pair model of Kimerling and Benton. To explain the experimental data, the existing FeB pair model is extended by taking into account the electronic capture and emission rates at the interstitial iron (Fei) trap level as a function of the charge carrier densities. According to this model, the charge state of the Fei may be charged in n-type making FeB association possible. Further, FeB pair formation during illumination in p-type silicon is investigated. This permits the determination of the charge carrier density dependent FeB dissociation rate and in consequence allows to determine the acceptor concentration in the co-doped n-type silicon by lifetime measurement.

  18. Iron-boron pairing kinetics in illuminated p-type and in boron/phosphorus co-doped n-type silicon

    SciTech Connect

    Möller, Christian; Bartel, Til; Gibaja, Fabien; Lauer, Kevin

    2014-07-14

    Iron-boron (FeB) pairing is observed in the n-type region of a boron and phosphorus co-doped silicon sample which is unexpected from the FeB pair model of Kimerling and Benton. To explain the experimental data, the existing FeB pair model is extended by taking into account the electronic capture and emission rates at the interstitial iron (Fe{sub i}) trap level as a function of the charge carrier densities. According to this model, the charge state of the Fe{sub i} may be charged in n-type making FeB association possible. Further, FeB pair formation during illumination in p-type silicon is investigated. This permits the determination of the charge carrier density dependent FeB dissociation rate and in consequence allows to determine the acceptor concentration in the co-doped n-type silicon by lifetime measurement.

  19. P-Doped Porous Carbon as Metal Free Catalysts for Selective Aerobic Oxidation with an Unexpected Mechanism.

    PubMed

    Patel, Mehulkumar A; Luo, Feixiang; Khoshi, M Reza; Rabie, Emann; Zhang, Qing; Flach, Carol R; Mendelsohn, Richard; Garfunkel, Eric; Szostak, Michal; He, Huixin

    2016-02-23

    An extremely simple and rapid (seconds) approach is reported to directly synthesize gram quantities of P-doped graphitic porous carbon materials with controlled P bond configuration. For the first time, it is demonstrated that the P-doped carbon materials can be used as a selective metal free catalyst for aerobic oxidation reactions. The work function of P-doped carbon materials, its connectivity to the P bond configuration, and the correlation with its catalytic efficiency are studied and established. In direct contrast to N-doped graphene, the P-doped carbon materials with higher work function show high activity in catalytic aerobic oxidation. The selectivity trend for the electron donating and withdrawing properties of the functional groups attached to the aromatic ring of benzyl alcohols is also different from other metal free carbon based catalysts. A unique catalytic mechanism is demonstrated, which differs from both GO and N-doped graphene obtained by high temperature nitrification. The unique and unexpected catalytic pathway endows the P-doped materials with not only good catalytic efficiency but also recyclability. This, combined with a rapid, energy saving approach that permits fabrication on a large scale, suggests that the P-doped porous materials are promising materials for "green catalysis" due to their higher theoretical surface area, sustainability, environmental friendliness, and low cost.

  20. An atomistic vision of the Mass Action Law: Prediction of carbon/oxygen defects in silicon

    SciTech Connect

    Brenet, G.; Timerkaeva, D.; Caliste, D.; Pochet, P.; Sgourou, E. N.; Londos, C. A.

    2015-09-28

    We introduce an atomistic description of the kinetic Mass Action Law to predict concentrations of defects and complexes. We demonstrate in this paper that this approach accurately predicts carbon/oxygen related defect concentrations in silicon upon annealing. The model requires binding and migration energies of the impurities and complexes, here obtained from density functional theory (DFT) calculations. Vacancy-oxygen complex kinetics are studied as a model system during both isochronal and isothermal annealing. Results are in good agreement with experimental data, confirming the success of the methodology. More importantly, it gives access to the sequence of chain reactions by which oxygen and carbon related complexes are created in silicon. Beside the case of silicon, the understanding of such intricate reactions is a key to develop point defect engineering strategies to control defects and thus semiconductors properties.

  1. Microhardness studies on thin carbon films grown on P-type, (100) silicon

    NASA Technical Reports Server (NTRS)

    Kolecki, J. C.

    1982-01-01

    A program to grow thin carbon films and investigate their physical and electrical properties is described. Characteristics of films grown by rf sputtering and vacuum arc deposition on p type, (100) silicon wafers are presented. Microhardness data were obtained from both the films and the silicon via the Vickers diamond indentation technique. These data show that the films are always harder than the silicon, even when the films are thin (of the order of 1000 A). Vacuum arc films were found to contain black carbon inclusions of the order of a few microns in size, and clusters of inclusions of the order of tens of microns. Transmission electron diffraction showed that the films being studied were amorphous in structure.

  2. Doping and effect of nano-diamond and carbon-nanotubes on flux pinning properties of MgB 2

    NASA Astrophysics Data System (ADS)

    Zhao, Y.; Yang, Y.; Cheng, C. H.; Zhang, Y.

    2007-10-01

    Doping effects of two types of nano-carbons: nano-diamond and carbon-nanotubes (CNTs), on the flux pinning properties of MgB2 bulk materials have been studied. Compared with nano-diamond, CNTs is prone to be doped into MgB2 lattice. Nano-diamond doping improves Jc(H) characteristics more significantly than CNTs doping in MgB2. TEM analysis reveals a unique microstructure in diamond-doped MgB2, which consists of tightly packed MgB2 nanograins (50-100 nm) with dense distribution of diamond nanoparticles (10-20 nm) inside the grains. Relatively, such a unique microstructure is not easy to form in CNTs-doped MgB2 due to an active reaction between CNTs and MgB2.

  3. Application of alkali metal-doped carbons for hydrogen recovery and isotope separation.

    PubMed

    Akuzawa, N; Okano, Y; Iwashita, T; Matsumoto, R; Soneda, Y

    2011-10-01

    Hydrogen-sorption isotherms of alkali metal-doped carbons at 77 K were determined for promoting application of these materials as hydrogen-recovery and isotope-separation agent. The hydrogen-sorption behavior of rubidium-doped Grafoil, with composition of RbC24, showed high sorption ability against hydrogen at low pressure. Taking into account the fact that sorption-desorption was fast and reversible, and the equilibrium pressure at half coverage was very low, i.e., 40 Pa, RbC24 prepared from Grafoil is promising as a recovery agent for hydrogen gas at low pressure. The hydrogen (H2)/deuterium(D2)-sorption isotherms of potassium-doped carbons with composition of KC10, prepared from multi wall carbon nanotube (MWCNT) and carbons derived from petroleum cokes with heat-treatment temperatures of 1000 and 1500 degrees C, were also determined. Isotope separation coefficient was estimated from those isotherms. A very large isotope effect was found for KC10 prepared from MWCNT, comparable to those prepared from carbons with heat-treatment temperatures of 1000 or 1500 degrees C. However, a severe problem was found for KC10 (MWCNT) that repetition of the sorption-desorption cycles resulted in the decrease of the sorbed amount of H2 and D2.

  4. Corking Nitrogen-Doped Carbon Nanotube Cups with Gold Nanoparticles for Biodegradable Drug Delivery Applications.

    PubMed

    Burkert, Seth C; Star, Alexander

    2015-12-02

    Carbon nanomaterials have been proposed as effective drug delivery devices; however their perceived biopersistence and toxicological profile may hinder their applications in medical therapeutics. Nitrogen doping of carbon nanotubes results in a unique "stacked-cup" structure, with cups held together through van der Waals forces. Disrupting these weak interactions yields individual and short-stacked nanocups that can subsequently be corked with gold nanoparticles, resulting in sealed containers for delivery of cargo. Peroxidase-catalyzed reactions can effectively uncork these containers, followed by complete degradation of the graphitic capsule, resulting in effective release of therapeutic cargo while minimizing harmful side effects. The protocols reported herein describe the synthesis of stacked nitrogen-doped carbon nanotube cups followed by effective separation into individual cups and gold nanoparticle cork formation resulting in loaded and sealed containers.

  5. Direct growth of polyaniline chains from N-doped sites of carbon nanotubes.

    PubMed

    Haq, Atta Ul; Lim, Joonwon; Yun, Je Moon; Lee, Won Jun; Han, Tae Hee; Kim, Sang Ouk

    2013-11-25

    Polymer grafting from graphitic carbon materials has been pursued for several decades. Unfortunately, currently available methods mostly rely on the harsh chemical treatment of graphitic carbons which causes severe degradation of chemical structure and material properties. A straightforward growth of polyaniline chain from the nitrogen (N)-doped sites of carbon nanotubes (CNTs) is presented. N-doping sites along the CNT wall nucleate the polymerization of aniline, which generates seamless hybrids consisting of polyaniline directly grafted onto the CNT walls. The resultant materials exhibit excellent synergistic electrochemical performance, and can be employed for charge collectors of supercapacitors. This approach introduces an efficient route to hybrid systems consisting of conducting polymers directly grafted from graphitic dopant sites.

  6. Ab Initio Investigation of the Structures of Fe-Doped Carbon Clusters

    NASA Astrophysics Data System (ADS)

    Lovato, Christella; Brownrigg, Clifton; Hira, Ajit

    2012-02-01

    We continue our interest in the theoretical study of carbon clusters to examine the effects of the doping of small carbon clusters (Cn, n = 2 - 15) with iron atoms. This work applies the hybrid ab initio methods of quantum chemistry to derive the different FemCn (m = 1-3) geometries. Of particular interest are linear, fan, and cyclic geometries. Electronic energies, rotational constants, dipole moments, and vibrational frequencies for these geometries are calculated. Exploration of the singlet, triplet, quintet, and septet potential energy surfaces is performed. The type of bonding in terms of competition between sp^2 and sp^3 hybridization is examined, with a view to addressing the possibility of the stabilization of the doped carbon nano-particles in a diamond type structure. The potential for the existence of new pathways to the fabrication of nanotubes is explored.

  7. Photovoltaic characteristics of Pd doped amorphous carbon film/SiO{sub 2}/Si

    SciTech Connect

    Ma Ming; Xue Qingzhong; Chen Huijuan; Zhou Xiaoyan; Xia Dan; Lv Cheng; Xie Jie

    2010-08-09

    The Pd doped amorphous carbon (a-C:Pd) films were deposited on n-Si substrates with or without a native SiO{sub 2} layer using magnetron sputtering. The photovoltaic characteristics of the a-C:Pd/SiO{sub 2}/Si and a-C:Pd/Si junctions were studied. It is found that under light illumination of 15 mW/cm{sup 2} at room temperature, the a-C:Pd/SiO{sub 2}/Si solar cell fabricated at 350 deg. C has a high power conversion efficiency of 4.7%, which is much better than the a-C/Si junctions reported before. The enhanced conversion efficiency is ascribed to the Pd doping and the increase in sp{sup 2}-bonded carbon clusters in the carbon film caused by the high temperature deposition.

  8. Synthesis of nitrogen-doped porous carbon nanofibers as an efficient electrode material for supercapacitors.

    PubMed

    Chen, Li-Feng; Zhang, Xu-Dong; Liang, Hai-Wei; Kong, Mingguang; Guan, Qing-Fang; Chen, Ping; Wu, Zhen-Yu; Yu, Shu-Hong

    2012-08-28

    Supercapacitors (also known as ultracapacitors) are considered to be the most promising approach to meet the pressing requirements of energy storage. Supercapacitive electrode materials, which are closely related to the high-efficiency storage of energy, have provoked more interest. Herein, we present a high-capacity supercapacitor material based on the nitrogen-doped porous carbon nanofibers synthesized by carbonization of macroscopic-scale carbonaceous nanofibers (CNFs) coated with polypyrrole (CNFs@polypyrrole) at an appropriate temperature. The composite nanofibers exhibit a reversible specific capacitance of 202.0 F g(-1) at the current density of 1.0 A g(-1) in 6.0 mol L(-1) aqueous KOH electrolyte, meanwhile maintaining a high-class capacitance retention capability and a maximum power density of 89.57 kW kg(-1). This kind of nitrogen-doped carbon nanofiber represents an alternative promising candidate for an efficient electrode material for supercapacitors.

  9. Corking Nitrogen-Doped Carbon Nanotube Cups with Gold Nanoparticles for Biodegradable Drug Delivery Applications.

    PubMed

    Burkert, Seth C; Star, Alexander

    2015-01-01

    Carbon nanomaterials have been proposed as effective drug delivery devices; however their perceived biopersistence and toxicological profile may hinder their applications in medical therapeutics. Nitrogen doping of carbon nanotubes results in a unique "stacked-cup" structure, with cups held together through van der Waals forces. Disrupting these weak interactions yields individual and short-stacked nanocups that can subsequently be corked with gold nanoparticles, resulting in sealed containers for delivery of cargo. Peroxidase-catalyzed reactions can effectively uncork these containers, followed by complete degradation of the graphitic capsule, resulting in effective release of therapeutic cargo while minimizing harmful side effects. The protocols reported herein describe the synthesis of stacked nitrogen-doped carbon nanotube cups followed by effective separation into individual cups and gold nanoparticle cork formation resulting in loaded and sealed containers. PMID:26629615

  10. Influence of oxygen on nitrogen-doped carbon nanofiber growth directly on nichrome foil

    NASA Astrophysics Data System (ADS)

    Vishwakarma, Riteshkumar; Shinde, Sachin M.; Saufi Rosmi, Mohamad; Takahashi, Chisato; Papon, Remi; Mahyavanshi, Rakesh D.; Ishii, Yosuke; Kawasaki, Shinji; Kalita, Golap; Tanemura, Masaki

    2016-09-01

    The synthesis of various nitrogen-doped (N-doped) carbon nanostructures has been significantly explored as an alternative material for energy storage and metal-free catalytic applications. Here, we reveal a direct growth technique of N-doped carbon nanofibers (CNFs) on flexible nichrome (NiCr) foil using melamine as a solid precursor. Highly reactive Cr plays a critical role in the nanofiber growth process on the metal alloy foil in an atmospheric pressure chemical vapor deposition (APCVD) process. Oxidation of Cr occurs in the presence of oxygen impurities, where Ni nanoparticles are formed on the surface and assist the growth of nanofibers. Energy-dispersive x-ray spectroscopy (EDXS) and x-ray photoelectron spectroscopy (XPS) clearly show the transformation process of the NiCr foil surface with annealing in the presence of oxygen impurities. The structural change of NiCr foil assists one-dimensional (1D) CNF growth, rather than the lateral two-dimensional (2D) growth. The incorporation of distinctive graphitic and pyridinic nitrogen in the graphene lattice are observed in the synthesized nanofiber, owing to better nitrogen solubility. Our finding shows an effective approach for the synthesis of highly N-doped carbon nanostructures directly on Cr-based metal alloys for various applications.

  11. Nitrogen-doped mesoporous carbon for energy storage in vanadium redox flow batteries

    NASA Astrophysics Data System (ADS)

    Shao, Yuyan; Wang, Xiqing; Engelhard, Mark; Wang, Chongmin; Dai, Sheng; Liu, Jun; Yang, Zhenguo; Lin, Yuehe

    We demonstrate an excellent performance of nitrogen-doped mesoporous carbon (N-MPC) for energy storage in vanadium redox flow batteries. Mesoporous carbon (MPC) is prepared using a soft-template method and doped with nitrogen by heat-treating MPC in NH 3. N-MPC is characterized with X-ray photoelectron spectroscopy and transmission electron microscopy. The redox reaction of [VO] 2+/[VO 2] + is characterized with cyclic voltammetry and electrochemical impedance spectroscopy. The electrocatalytic kinetics of the redox couple [VO] 2+/[VO 2] + is significantly enhanced on N-MPC electrode compared with MPC and graphite electrodes. The reversibility of the redox couple [VO] 2+/[VO 2] + is greatly improved on N-MPC (0.61 for N-MPC vs. 0.34 for graphite), which is expected to increase the energy storage efficiency of redox flow batteries. Nitrogen doping facilitates the electron transfer on electrode/electrolyte interface for both oxidation and reduction processes. N-MPC is a promising material for redox flow batteries. This also opens up new and wider applications of nitrogen-doped carbon.

  12. Influence of oxygen on nitrogen-doped carbon nanofiber growth directly on nichrome foil.

    PubMed

    Vishwakarma, Riteshkumar; Shinde, Sachin M; Rosmi, Mohamad Saufi; Takahashi, Chisato; Papon, Remi; Mahyavanshi, Rakesh D; Ishii, Yosuke; Kawasaki, Shinji; Kalita, Golap; Tanemura, Masaki

    2016-09-01

    The synthesis of various nitrogen-doped (N-doped) carbon nanostructures has been significantly explored as an alternative material for energy storage and metal-free catalytic applications. Here, we reveal a direct growth technique of N-doped carbon nanofibers (CNFs) on flexible nichrome (NiCr) foil using melamine as a solid precursor. Highly reactive Cr plays a critical role in the nanofiber growth process on the metal alloy foil in an atmospheric pressure chemical vapor deposition (APCVD) process. Oxidation of Cr occurs in the presence of oxygen impurities, where Ni nanoparticles are formed on the surface and assist the growth of nanofibers. Energy-dispersive x-ray spectroscopy (EDXS) and x-ray photoelectron spectroscopy (XPS) clearly show the transformation process of the NiCr foil surface with annealing in the presence of oxygen impurities. The structural change of NiCr foil assists one-dimensional (1D) CNF growth, rather than the lateral two-dimensional (2D) growth. The incorporation of distinctive graphitic and pyridinic nitrogen in the graphene lattice are observed in the synthesized nanofiber, owing to better nitrogen solubility. Our finding shows an effective approach for the synthesis of highly N-doped carbon nanostructures directly on Cr-based metal alloys for various applications. PMID:27479000

  13. Confinement induced binding in noble gas atoms within a BN-doped carbon nanotube

    NASA Astrophysics Data System (ADS)

    Chakraborty, Debdutta; Chattaraj, Pratim Kumar

    2015-02-01

    Confinement induced binding interaction patterns for noble gas atoms (Hen/m, Arn, Krn; n = 2, m = 3) atoms inside pristine and -BN doped (3, 3) single walled carbon nanotube (SWCNT) have been studied through density functional theory calculations. The kinetic stability for He dimer and trimer has been investigated at 100 K and 300 K through an ab initio molecular dynamics simulation. The positive role of doping in SWCNT in enhancing the nature of interaction as well as the kinetic stability of the said systems has been found.

  14. High Power Q-Switched Thulium Doped Fibre Laser using Carbon Nanotube Polymer Composite Saturable Absorber.

    PubMed

    Chernysheva, Maria; Mou, Chengbo; Arif, Raz; AlAraimi, Mohammed; Rümmeli, Mark; Turitsyn, Sergei; Rozhin, Aleksey

    2016-01-01

    We have proposed and demonstrated a Q-switched Thulium doped fibre laser (TDFL) with a 'Yin-Yang' all-fibre cavity scheme based on a combination of nonlinear optical loop mirror (NOLM) and nonlinear amplified loop mirror (NALM). Unidirectional lasing operation has been achieved without any intracavity isolator. By using a carbon nanotube polymer composite based saturable absorber (SA), we demonstrated the laser output power of ~197 mW and pulse energy of 1.7 μJ. To the best of our knowledge, this is the highest output power from a nanotube polymer composite SA based Q-switched Thulium doped fibre laser. PMID:27063511

  15. High Power Q-Switched Thulium Doped Fibre Laser using Carbon Nanotube Polymer Composite Saturable Absorber

    PubMed Central

    Chernysheva, Maria; Mou, Chengbo; Arif, Raz; AlAraimi, Mohammed; Rümmeli, Mark; Turitsyn, Sergei; Rozhin, Aleksey

    2016-01-01

    We have proposed and demonstrated a Q-switched Thulium doped fibre laser (TDFL) with a ‘Yin-Yang’ all-fibre cavity scheme based on a combination of nonlinear optical loop mirror (NOLM) and nonlinear amplified loop mirror (NALM). Unidirectional lasing operation has been achieved without any intracavity isolator. By using a carbon nanotube polymer composite based saturable absorber (SA), we demonstrated the laser output power of ~197 mW and pulse energy of 1.7 μJ. To the best of our knowledge, this is the highest output power from a nanotube polymer composite SA based Q-switched Thulium doped fibre laser. PMID:27063511

  16. Influence of cysteine doping on photoluminescence intensity from semiconducting single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Kurnosov, N. V.; Leontiev, V. S.; Linnik, A. S.; Karachevtsev, V. A.

    2015-03-01

    Photoluminescence (PL) from semiconducting single-walled carbon nanotubes can be applied for detection of cysteine. It is shown that cysteine doping (from 10-8 to 10-3 M) into aqueous suspension of nanotubes with adsorbed DNA leads to increase of PL intensity. The PL intensity was enhanced by 27% at 10-3 M cysteine concentration in suspension. Most likely, the PL intensity increases due to the passivation of p-defects on the nanotube by the cysteine containing reactive thiol group. The effect of doping with other amino acids without this group (methionine, serine, aspartic acid, lysine, proline) on the PL intensity is essentially weaker.

  17. High Power Q-Switched Thulium Doped Fibre Laser using Carbon Nanotube Polymer Composite Saturable Absorber.

    PubMed

    Chernysheva, Maria; Mou, Chengbo; Arif, Raz; AlAraimi, Mohammed; Rümmeli, Mark; Turitsyn, Sergei; Rozhin, Aleksey

    2016-01-01

    We have proposed and demonstrated a Q-switched Thulium doped fibre laser (TDFL) with a 'Yin-Yang' all-fibre cavity scheme based on a combination of nonlinear optical loop mirror (NOLM) and nonlinear amplified loop mirror (NALM). Unidirectional lasing operation has been achieved without any intracavity isolator. By using a carbon nanotube polymer composite based saturable absorber (SA), we demonstrated the laser output power of ~197 mW and pulse energy of 1.7 μJ. To the best of our knowledge, this is the highest output power from a nanotube polymer composite SA based Q-switched Thulium doped fibre laser.

  18. Nitrogen-doped porous carbon with an ultrahigh specific surface area for superior performance supercapacitors

    NASA Astrophysics Data System (ADS)

    Long, Chao; Zhuang, Jianle; Xiao, Yong; Zheng, Mingtao; Hu, Hang; Dong, Hanwu; Lei, Bingfu; Zhang, Haoran; Liu, Yingliang

    2016-04-01

    Owing to its abundant nitrogen content, silk cocoon is a promising precursor for the synthesis of Nitrogen-doped porous carbon (N-PC). Using a simple staged KOH activation, the prepared sample displays particular nanostructure with ultrahigh specific surface area (3841 m2 g-1) and appropriate pore size, providing favorable pathways for transportation and penetration of electrolyte ions. Additionally, the doped nitrogen atoms ensure the samples with pseudocapacitive behavior. Those special characteristics endow N-PCs with high capacity, low resistance, and long-term stability, indicating a wonderful potential for application in energy-storage devices.

  19. Carbon nanotube doped liquid crystal OCB cells: physical and electro-optical properties.

    PubMed

    Lu, Shin-Ying; Chien, Liang-Chy

    2008-08-18

    We report single-wall carbon nanotube (CNT) doped liquid crystal materials which show significant improvement in the response time for optical controlled birefringence (OCB) cells. Four different types of liquid crystals (LCs) were chosen to mix with CNTs and they demonstrated similar results in improving the response time. Experimental results show that the anchoring energy at alignment layers has been changed by CNT doping. CNTs were attracted to the alignment layer and modified the property of the surface. The anchoring enhancement is due to the pi-pi electron stacking between the CNTs, LC molecules and alignment layers. PMID:18711517

  20. High Power Q-Switched Thulium Doped Fibre Laser using Carbon Nanotube Polymer Composite Saturable Absorber

    NASA Astrophysics Data System (ADS)

    Chernysheva, Maria; Mou, Chengbo; Arif, Raz; Alaraimi, Mohammed; Rümmeli, Mark; Turitsyn, Sergei; Rozhin, Aleksey

    2016-04-01

    We have proposed and demonstrated a Q-switched Thulium doped fibre laser (TDFL) with a ‘Yin-Yang’ all-fibre cavity scheme based on a combination of nonlinear optical loop mirror (NOLM) and nonlinear amplified loop mirror (NALM). Unidirectional lasing operation has been achieved without any intracavity isolator. By using a carbon nanotube polymer composite based saturable absorber (SA), we demonstrated the laser output power of ~197 mW and pulse energy of 1.7 μJ. To the best of our knowledge, this is the highest output power from a nanotube polymer composite SA based Q-switched Thulium doped fibre laser.