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Sample records for carbon doped silicon

  1. Quantum conductance of silicon-doped carbon wire nanojunctions

    PubMed Central

    2012-01-01

    Unknown quantum electronic conductance across nanojunctions made of silicon-doped carbon wires between carbon leads is investigated. This is done by an appropriate generalization of the phase field matching theory for the multi-scattering processes of electronic excitations at the nanojunction and the use of the tight-binding method. Our calculations of the electronic band structures for carbon, silicon, and diatomic silicon carbide are matched with the available corresponding density functional theory results to optimize the required tight-binding parameters. Silicon and carbon atoms are treated on the same footing by characterizing each with their corresponding orbitals. Several types of nanojunctions are analyzed to sample their behavior under different atomic configurations. We calculate for each nanojunction the individual contributions to the quantum conductance for the propagating σ, Π, and σ∗electron incidents from the carbon leads. The calculated results show a number of remarkable features, which include the influence of the ordered periodic configurations of silicon-carbon pairs and the suppression of quantum conductance due to minimum substitutional disorder and artificially organized symmetry on these nanojunctions. Our results also demonstrate that the phase field matching theory is an efficient tool to treat the quantum conductance of complex molecular nanojunctions. PMID:23130998

  2. Suppression of boron-oxygen defects in Czochralski silicon by carbon co-doping

    SciTech Connect

    Wu, Yichao; Yu, Xuegong He, Hang; Chen, Peng; Yang, Deren

    2015-03-09

    We have investigated the influence of carbon co-doping on the formation of boron-oxygen defects in Czochralski silicon. It is found that carbon can effectively suppress the formation of boron-oxygen defects. Based on our experiments and first-principle theoretical calculations, it is believed that this effect is attributed to the formation of more energetically favorable carbon-oxygen complexes. Moreover, the diffusion of oxygen dimers in carbon co-doped silicon also becomes more difficult. All these phenomena should be associated with the tensile stress field induced by carbon doping in silicon.

  3. Structure and stability of a silicon cluster on sequential doping with carbon atoms

    NASA Astrophysics Data System (ADS)

    AzeezullaNazrulla, Mohammed; Joshi, Krati; Israel, S.; Krishnamurty, Sailaja

    2016-02-01

    SiC is a highly stable material in bulk. On the other hand, alloys of silicon and carbon at nanoscale length are interesting from both technological as well fundamental view point and are being currently synthesized by various experimental groups (Truong et. al., 2015 [26]). In the present work, we identify a well-known silicon cluster viz., Si10 and dope it sequentially with carbon atoms. The evolution of electronic structure (spin state and the structural properties) on doping, the charge redistribution and structural properties are analyzed. It is interesting to note that the ground state SiC clusters prefer to be in the lowest spin state. Further, it is seen that carbon atoms are the electron rich centres while silicon atoms are electron deficient in every SiC alloy cluster. The carbon-carbon bond lengths in alloy clusters are equivalent to those seen in fullerene molecules. Interestingly, the carbon atoms tend to aggregate together with silicon atoms surrounding them by donating the charge. As a consequence, very few Si-Si bonds are noted with increasing concentrations of C atoms in a SiC alloy. Physical and chemical stability of doped clusters is studied by carrying out finite temperature behaviour and adsorbing O2 molecule on Si9C and Si8C2 clusters, respectively.

  4. Silicon and aluminum doping effects on the microstructure and properties of polymeric amorphous carbon films

    NASA Astrophysics Data System (ADS)

    Liu, Xiaoqiang; Hao, Junying; Xie, Yuntao

    2016-08-01

    Polymeric amorphous carbon films were prepared by radio frequency (R.F. 13.56 MHz) magnetron sputtering deposition. The microstructure evolution of the deposited polymeric films induced by silicon (Si) and aluminum(Al) doping were scrutinized through infrared spectroscopy, multi-wavelength Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The comparative results show that Si doping can enhance polymerization and Al doping results in an increase in the ordered carbon clusters. Si and Al co-doping into polymeric films leads to the formation of an unusual dual nanostructure consisting of cross-linked polymer-like hydrocarbon chains and fullerene-like carbon clusters. The super-high elasticity and super-low friction coefficients (<0.002) under a high vacuum were obtained through Si and Al co-doping into the films. Unconventionally, the co-doped polymeric films exhibited a superior wear resistance even though they were very soft. The relationship between the microstructure and properties of the polymeric amorphous carbon films with different elements doping are also discussed in detail.

  5. Silicon-doping in carbon nanotubes: formation energies, electronic structures, and chemical reactivity.

    PubMed

    Bian, Ruixin; Zhao, Jingxiang; Fu, Honggang

    2013-04-01

    By carrying out density functional theory (DFT) calculations, we have studied the effects of silicon (Si)-doping on the geometrical and electronic properties, as well as the chemical reactivity of carbon nanotubes (CNTs). It is found that the formation energies of these nanotubes increase with increasing tube diameters, indicating that the embedding of Si into narrower CNTs is more energetically favorable. For the given diameters, Si-doping in a (n, 0) CNT is slightly easier than that of in (n, n) CNT. Moreover, the doped CNTs with two Si atoms are easier to obtain than those with one Si atom. Due to the introduction of impurity states after Si-doping, the electronic properties of CNTs have been changed in different ways: upon Si-doping into zigzag CNTs, the band gap of nanotube is decreased, while the opening of band gap in armchair CNTs is found. To evaluate the chemical reactivity of Si-doped CNTs, the adsorption of NH3 and H2O on this kind of material is explored. The results show that N-H bond of NH3 and O-H bond of H2O can be easily split on the surface of doped CNTs. Of particular interest, the novel reactivity makes it feasible to use Si-doped CNT as a new type of splitter for NH3 and H2O bond, which is very important in chemical and biological processes. Future experimental studies are greatly desired to probe such interesting processes.

  6. Characterization of nitrogen doped silicon-carbon multi-layer nanostructures obtained by TVA method

    NASA Astrophysics Data System (ADS)

    Ciupina, Victor; Vasile, Eugeniu; Porosnicu, Corneliu; Prodan, Gabriel C.; Lungu, Cristian P.; Vladoiu, Rodica; Jepu, Ionut; Mandes, Aurelia; Dinca, Virginia; Caraiane, Aureliana; Nicolescu, Virginia; Dinca, Paul; Zaharia, Agripina

    2016-09-01

    Ionized nitrogen doped Si-C multi-layer thin films used to increase the oxidation resistance of carbon have been obtained by Thermionic Vacuum Arc (TVA) method. The 100 nm thickness carbon thin films were deposed on silicon or glass substrates and then seven N doped Si-C successively layers on carbon were deposed. To characterize the microstructure, tribological and electrical properties of as prepared N-SiC multi-layer films, Transmission Electron Microscopy (TEM, STEM), Energy Dispersive X-Ray Spectroscopy (EDXS), electrical and tribological techniques were achieved. Samples containing multi-layer N doped Si-C coating on carbon were investigated up to 1000°C. Oxidation protection is based on the reaction between SiC and elemental oxygen, resulting SiO2 and CO2, and also on the reaction involving N, O and Si-C, resulting silicon oxynitride (SiNxOy) with a continuously vary composition, and because nitrogen can acts as a trapping barrier for oxygen. The tribological properties of structures were studied using a tribometer with ball-on-disk configuration from CSM device with sapphire ball. The measurements show that the friction coefficient on the N-SiC is smaller than friction coefficient on uncoated carbon layer. Electrical conductivity at different temperatures was measured in constant current mode. The results confirm the fact that conductivity is greater when nitrogen content is greater. To justify the temperature dependence of conductivity we assume a thermally activated electrical transport mechanism.

  7. Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon

    SciTech Connect

    Chroneos, A.; Londos, C. A.; Sgourou, E. N.

    2011-11-01

    Experimental and theoretical techniques are used to investigate the impact of tin doping on the formation and the thermal stability of oxygen- and carbon-related defects in electron-irradiated Czochralski silicon. The results verify previous reports that Sn doping reduces the formation of the VO defect and suppresses its conversion to the VO{sub 2} defect. Within experimental accuracy, a small delay in the growth of the VO{sub 2} defect is observed. Regarding carbon-related defects, it is determined that Sn doping leads to a reduction in the formation of the C{sub i}O{sub i}, C{sub i}C{sub s}, and C{sub i}O{sub i}(Si{sub I}) defects although an increase in their thermal stability is observed. The impact of strain induced in the lattice by the larger tin substitutional atoms, as well as their association with intrinsic defects and carbon impurities, can be considered as an explanation to account for the above observations. The density functional theory calculations are used to study the interaction of tin with lattice vacancies and oxygen- and carbon-related clusters. Both experimental and theoretical results demonstrate that tin co-doping is an efficient defect engineering strategy to suppress detrimental effects because of the presence of oxygen- and carbon-related defect clusters in devices.

  8. Interstitial carbon formation in irradiated copper-doped silicon

    SciTech Connect

    Yarykin, N. A.; Weber, J.

    2015-06-15

    The influence of a copper impurity on the spectrum of defects induced in p-Si crystals containing a low oxygen concentration by irradiation with electrons with an energy of 5 MeV at room temperature is studied by deep-level transient spectroscopy. It is found that interstitial carbon atoms (C{sub i}) which are the dominant defects in irradiated samples free of copper are unobservable immediately after irradiation, if the concentration of mobile interstitial copper atoms (Cu{sub i}) is higher than the concentration of radiation defects. This phenomenon is attributed to the formation of (Cu{sub i}, C{sub i}) complexes, which do not introduce levels into the lower half of the band gap. It is shown that these complexes dissociate upon annealing at temperatures of 300–340 K and, thus, bring about the appearance of interstitial carbon.

  9. Enhancement of photovoltaic effects and photoconductivity observed in Co-doped amorphous carbon/silicon heterostructures

    SciTech Connect

    Jiang, Y. C.; Gao, J.

    2016-08-22

    Co-doped amorphous carbon (Co-C)/silicon heterostructures were fabricated by growing Co-C films on n-type Si substrates using pulsed laser deposition. A photovoltaic effect (PVE) has been observed at room temperature. Open-circuit voltage V{sub oc} = 320 mV and short-circuit current density J{sub sc }= 5.62 mA/cm{sup 2} were measured under illumination of 532-nm light with the power of 100 mW/cm{sup 2}. In contrast, undoped amorphous carbon/Si heterostructures revealed no significant PVE. Based on the PVE and photoconductivity (PC) investigated at different temperatures, it was found that the energy conversion efficiency increased with increasing the temperature and reached the maximum at room temperature, while the photoconductivity showed a reverse temperature dependence. The observed competition between PVE and PC was correlated with the way to distribute absorbed photons. The possible mechanism, explaining the enhanced PVE and PC in the Co-C/Si heterostructures, might be attributed to light absorption enhanced by localized surface plasmons in Co nanoparticles embedded in the carbon matrix.

  10. Microhardness of carbon-doped (111) p-type Czochralski silicon

    NASA Technical Reports Server (NTRS)

    Danyluk, S.; Lim, D. S.; Kalejs, J.

    1985-01-01

    The effect of carbon on (111) p-type Czochralski silicon is examined. The preparation of the silicon and microhardness test procedures are described, and the equation used to determine microhardness from indentations in the silicon wafers is presented. The results indicate that as the carbon concentration in the silicon increases the microhardness increases. The linear increase in microhardness is the result of carbon hindering dislocation motion, and the effect of temperature on silicon deformation and dislocation mobility is explained. The measured microhardness was compared with an analysis which is based on dislocation pinning by carbon; a good correlation was observed. The Labusch model for the effect of pinning sites on dislocation motion is given.

  11. Microhardness of carbon-doped (111) p-type Czochralski silicon

    NASA Technical Reports Server (NTRS)

    Danyluk, S.; Lim, D. S.; Kalejs, J.

    1985-01-01

    The effect of carbon on (111) p-type Czochralski silicon is examined. The preparation of the silicon and microhardness test procedures are described, and the equation used to determine microhardness from indentations in the silicon wafers is presented. The results indicate that as the carbon concentration in the silicon increases the microhardness increases. The linear increase in microhardness is the result of carbon hindering dislocation motion, and the effect of temperature on silicon deformation and dislocation mobility is explained. The measured microhardness was compared with an analysis which is based on dislocation pinning by carbon; a good correlation was observed. The Labusch model for the effect of pinning sites on dislocation motion is given.

  12. GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgallium

    NASA Astrophysics Data System (ADS)

    Molière, T.; Jaffré, A.; Alvarez, J.; Mencaraglia, D.; Connolly, J. P.; Vincent, L.; Hallais, G.; Mangelinck, D.; Descoins, M.; Bouchier, D.; Renard, C.

    2017-01-01

    The monolithic integration of III-V semiconductors on silicon and particularly of GaAs has aroused great interest since the 1980s. Potential applications are legion, ranging from photovoltaics to high mobility channel transistors. By using a novel integration method, we have shown that it is possible to achieve heteroepitaxial integration of GaAs crystals (typical size 1 μ m) on silicon without any structural defect such as antiphase domains, dislocations, or stress, usually reported for direct GaAs heteroepitaxy on silicon. However, concerning their electronic properties, conventional free carrier characterization methods are impractical due to the micrometric size of GaAs crystals. In order to evaluate the GaAs material quality for optoelectronic applications, a series of indirect analyses such as atom probe tomography, Raman spectroscopy, and micro-photoluminescence as a function of temperature were performed. These revealed a high content of partially electrically active carbon originating from the trimethylgallium used as the Ga precursor. Nevertheless, the very good homogeneity observed by this doping mechanism and the attractive properties of carbon as a dopant once controlled to a sufficient degree are a promising route to device doping.

  13. Highly doped silicon nanowires by monolayer doping.

    PubMed

    Veerbeek, Janneke; Ye, Liang; Vijselaar, Wouter; Kudernac, Tibor; van der Wiel, Wilfred G; Huskens, Jurriaan

    2017-02-23

    Controlling the doping concentration of silicon nanostructures is challenging. Here, we investigated three different monolayer doping techniques to obtain silicon nanowires with a high doping dose. These routes were based on conventional monolayer doping, starting from covalently bound dopant-containing molecules, or on monolayer contact doping, in which a source substrate coated with a monolayer of a carborane silane was the dopant source. As a third route, both techniques were combined to retain the benefits of conformal monolayer formation and the use of an external capping layer. These routes were used for doping fragile porous nanowires fabricated by metal-assisted chemical etching. Differences in porosity were used to tune the total doping dose inside the nanowires, as measured by X-ray photoelectron spectroscopy and secondary ion mass spectrometry measurements. The higher the porosity, the higher was the surface available for dopant-containing molecules, which in turn led to a higher doping dose. Slightly porous nanowires could be doped via all three routes, which resulted in highly doped nanowires with (projected areal) doping doses of 10(14)-10(15) boron atoms per cm(2) compared to 10(12) atoms per cm(2) for a non-porous planar sample. Highly porous nanowires were not compatible with the conventional monolayer doping technique, but monolayer contact doping and the combined route resulted for these highly porous nanowires in tremendously high doping doses up to 10(17) boron atoms per cm(2).

  14. Cornlike Ordered Mesoporous Silicon Particles Modified by Nitrogen-Doped Carbon Layer for the Application of Li-Ion Battery.

    PubMed

    Lu, Bing; Ma, Bingjie; Deng, Xinglan; Li, Wangwu; Wu, Zhenyu; Shu, Hongbo; Wang, Xianyou

    2017-09-15

    The cornlike ordered mesoporous silicon (OM-Si) particles modified by the nitrogen-doped carbon layer (OM-Si@NC) are successfully fabricated and used as the anode of lithium-ion battery (LIBs). The influences of the N-doped carbon layer on the structure and electrochemical properties of the OM-Si@NC composite are detailedly investigated by transmission electron microscopy (TEM), X-ray diffraction (XRD), Raman spectrum, X-ray photoelectron spectroscopy (XPS), and charge/discharge tests. The results reveal that the amorphous N-doped carbon layer can offer the abundant conductive pathways for fast lithium ion transportation and electron transfer, which not only leads to a high specific capacity under high ampere density but also serves as a structural barrier maintaining the whole integrity and settling the mechanical breaking due to the huge volume changes of Si host. Therefore, the as-synthesized OM-Si@NC composite exhibits a high original discharge capacity of 2548 mA h g(-1) under 0.2 A g(-1) as well as a large reversible capacity of 1336 mA h g(-1) under 1 A g(-1) after 200 circles. The OM-Si@NC composite prepared by a relatively simple and feasible synthesis method shows excellent electrochemical performances and turns out to be promising for the application of high power LIBs.

  15. Epitaxial Silicon Doped With Antimony

    NASA Technical Reports Server (NTRS)

    Huffman, James E.; Halleck, Bradley L.

    1996-01-01

    High-purity epitaxial silicon doped with antimony made by chemical vapor deposition, using antimony pentachloride (SbCI5) as source of dopant and SiH4, SiCI2H2, or another conventional source of silicon. High purity achieved in layers of arbitrary thickness. Epitaxial silicon doped with antimony needed to fabricate impurity-band-conduction photodetectors operating at wavelengths from 2.5 to 40 micrometers.

  16. Epitaxial Silicon Doped With Antimony

    NASA Technical Reports Server (NTRS)

    Huffman, James E.; Halleck, Bradley L.

    1996-01-01

    High-purity epitaxial silicon doped with antimony made by chemical vapor deposition, using antimony pentachloride (SbCI5) as source of dopant and SiH4, SiCI2H2, or another conventional source of silicon. High purity achieved in layers of arbitrary thickness. Epitaxial silicon doped with antimony needed to fabricate impurity-band-conduction photodetectors operating at wavelengths from 2.5 to 40 micrometers.

  17. Stabilization of boron carbide via silicon doping.

    PubMed

    Proctor, J E; Bhakhri, V; Hao, R; Prior, T J; Scheler, T; Gregoryanz, E; Chhowalla, M; Giulani, F

    2015-01-14

    Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping.

  18. Stabilization of boron carbide via silicon doping

    NASA Astrophysics Data System (ADS)

    Proctor, J. E.; Bhakhri, V.; Hao, R.; Prior, T. J.; Scheler, T.; Gregoryanz, E.; Chhowalla, M.; Giulani, F.

    2015-01-01

    Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping.

  19. Nitrogen-doped carbon coated silicon derived from a facile strategy with enhanced performance for lithium storage

    NASA Astrophysics Data System (ADS)

    Zeng, Lingxing; Liu, Renpin; Qiu, Heyuan; Chen, Xi; Huang, Xiaoxia; Xiong, Peixun; Qian, Qingrong; Chen, Qinghua; Wei, Mingdeng

    2016-07-01

    Silicon-based nanostructures are receiving intense interest in lithium-ion batteries (LIBs) because they have ultrahigh lithium ion storage ability. However, the fast capacity fading induced by the considerably tremendous volume changes of Si anode during the Li-ion intercalation processes as well as the low intrinsic electric conductivity have hindered its deployment. Herein, we initially developed an effective technique to synthesize the core-shell Si/nitrogen-doped carbon (Si/N-C), composite by combining in situ interfacial polymerization and decorate with melamine, followed by carbonization. When used as anode material for LIBs, the Si/N-C composite delivered a notable reversible capacity (1084 mAh g-1 at 0.2 A g-1 for 50 cycles) and high rate capability (495 mAh g-1 at 1 A g-1).

  20. Carbon nanotube coating silicon doped with Cr as a high capacity anode

    NASA Astrophysics Data System (ADS)

    Ishihara, Tatsumi; Nakasu, Masashi; Yoshio, Masaki; Nishiguchi, Hiroyasu; Takita, Yusaku

    Effects of dopant and coating carbon nanotube on anodic performance of Si were studied for metallic anode Li ion rechargeable battery with large capacity. Although the large Li intercalation capacity higher than 1500 mAh g -1 is exhibited on pure Si, it decreased drastically with increasing cycle number. Increasing the electrical conductivity by doping Cr or B is effective for increasing the initial capacity and the cycle stability of Si for Li intercalation. Coating semiconductive Si with the carbon nanotube by decomposition of hydrocarbon is effective for increasing the cycle stability, though the initial Li intercalation capacity slightly decreased. Conducting binder is also important for increasing the cycle stability and it was found that Li intercalation capacity higher than 1500 mAh g -1 can be sustained by using poly vinyliden fruolide. Consequently, reversible Li intercalation capacity of 1500 mAh g -1 was successfully sustained after 10th cycles of charge and discharge by doping Cr and coating with carbon nanotube.

  1. Superconductivity in doped cubic silicon

    NASA Astrophysics Data System (ADS)

    Bustarret, E.; Marcenat, C.; Achatz, P.; Kačmarčik, J.; Lévy, F.; Huxley, A.; Ortéga, L.; Bourgeois, E.; Blase, X.; Débarre, D.; Boulmer, J.

    2006-11-01

    Although the local resistivity of semiconducting silicon in its standard crystalline form can be changed by many orders of magnitude by doping with elements, superconductivity has so far never been achieved. Hybrid devices combining silicon's semiconducting properties and superconductivity have therefore remained largely underdeveloped. Here we report that superconductivity can be induced when boron is locally introduced into silicon at concentrations above its equilibrium solubility. For sufficiently high boron doping (typically 100p.p.m.) silicon becomes metallic. We find that at a higher boron concentration of several per cent, achieved by gas immersion laser doping, silicon becomes superconducting. Electrical resistivity and magnetic susceptibility measurements show that boron-doped silicon (Si:B) made in this way is a superconductor below a transition temperature Tc~0.35K, with a critical field of about 0.4T. Ab initio calculations, corroborated by Raman measurements, strongly suggest that doping is substitutional. The calculated electron-phonon coupling strength is found to be consistent with a conventional phonon-mediated coupling mechanism. Our findings will facilitate the fabrication of new silicon-based superconducting nanostructures and mesoscopic devices with high-quality interfaces.

  2. Nitrogen-doped amorphous carbon-silicon core-shell structures for high-power supercapacitor electrodes

    PubMed Central

    Tali, S. A. Safiabadi; Soleimani-Amiri, S.; Sanaee, Z.; Mohajerzadeh, S.

    2017-01-01

    We report successful deposition of nitrogen-doped amorphous carbon films to realize high-power core-shell supercapacitor electrodes. A catalyst-free method is proposed to deposit large-area stable, highly conformal and highly conductive nitrogen-doped amorphous carbon (a-C:N) films by means of a direct-current plasma enhanced chemical vapor deposition technique (DC-PECVD). This approach exploits C2H2 and N2 gases as the sources of carbon and nitrogen constituents and can be applied to various micro and nanostructures. Although as-deposited a-C:N films have a porous surface, their porosity can be significantly improved through a modification process consisting of Ni-assisted annealing and etching steps. The electrochemical analyses demonstrated the superior performance of the modified a-C:N as a supercapacitor active material, where specific capacitance densities as high as 42 F/g and 8.5 mF/cm2 (45 F/cm3) on silicon microrod arrays were achieved. Furthermore, this supercapacitor electrode showed less than 6% degradation of capacitance over 5000 cycles of a galvanostatic charge-discharge test. It also exhibited a relatively high energy density of 2.3 × 103 Wh/m3 (8.3 × 106 J/m3) and ultra-high power density of 2.6 × 108 W/m3 which is among the highest reported values. PMID:28186204

  3. Nitrogen-doped amorphous carbon-silicon core-shell structures for high-power supercapacitor electrodes

    NASA Astrophysics Data System (ADS)

    Tali, S. A. Safiabadi; Soleimani-Amiri, S.; Sanaee, Z.; Mohajerzadeh, S.

    2017-02-01

    We report successful deposition of nitrogen-doped amorphous carbon films to realize high-power core-shell supercapacitor electrodes. A catalyst-free method is proposed to deposit large-area stable, highly conformal and highly conductive nitrogen-doped amorphous carbon (a-C:N) films by means of a direct-current plasma enhanced chemical vapor deposition technique (DC-PECVD). This approach exploits C2H2 and N2 gases as the sources of carbon and nitrogen constituents and can be applied to various micro and nanostructures. Although as-deposited a-C:N films have a porous surface, their porosity can be significantly improved through a modification process consisting of Ni-assisted annealing and etching steps. The electrochemical analyses demonstrated the superior performance of the modified a-C:N as a supercapacitor active material, where specific capacitance densities as high as 42 F/g and 8.5 mF/cm2 (45 F/cm3) on silicon microrod arrays were achieved. Furthermore, this supercapacitor electrode showed less than 6% degradation of capacitance over 5000 cycles of a galvanostatic charge-discharge test. It also exhibited a relatively high energy density of 2.3 × 103 Wh/m3 (8.3 × 106 J/m3) and ultra-high power density of 2.6 × 108 W/m3 which is among the highest reported values.

  4. Nitrogen-doped amorphous carbon-silicon core-shell structures for high-power supercapacitor electrodes.

    PubMed

    Tali, S A Safiabadi; Soleimani-Amiri, S; Sanaee, Z; Mohajerzadeh, S

    2017-02-10

    We report successful deposition of nitrogen-doped amorphous carbon films to realize high-power core-shell supercapacitor electrodes. A catalyst-free method is proposed to deposit large-area stable, highly conformal and highly conductive nitrogen-doped amorphous carbon (a-C:N) films by means of a direct-current plasma enhanced chemical vapor deposition technique (DC-PECVD). This approach exploits C2H2 and N2 gases as the sources of carbon and nitrogen constituents and can be applied to various micro and nanostructures. Although as-deposited a-C:N films have a porous surface, their porosity can be significantly improved through a modification process consisting of Ni-assisted annealing and etching steps. The electrochemical analyses demonstrated the superior performance of the modified a-C:N as a supercapacitor active material, where specific capacitance densities as high as 42 F/g and 8.5 mF/cm(2) (45 F/cm(3)) on silicon microrod arrays were achieved. Furthermore, this supercapacitor electrode showed less than 6% degradation of capacitance over 5000 cycles of a galvanostatic charge-discharge test. It also exhibited a relatively high energy density of 2.3 × 10(3) Wh/m(3) (8.3 × 10(6) J/m(3)) and ultra-high power density of 2.6 × 10(8) W/m(3) which is among the highest reported values.

  5. From two-dimension to one-dimension: the curvature effect of silicon-doped graphene and carbon nanotubes for oxygen reduction reaction.

    PubMed

    Zhang, Peng; Hou, Xiuli; Mi, Jianli; He, Yanqiong; Lin, Lin; Jiang, Qing; Dong, Mingdong

    2014-09-07

    For the goal of practical industrial development of fuel cells, inexpensive, sustainable, and highly efficient electrocatalysts for oxygen reduction reactions (ORR) are highly desirable alternatives to platinum (Pt) and other rare metals. In this work, based on density functional theory, silicon (Si)-doped carbon nanotubes (CNTs) and graphene as metal-free, low cost, and high-performance electrocatalysts for ORR are studied systematically. It is found that the curvature effect plays an important role in the adsorption and reduction of oxygen. The adsorption of O2 becomes weaker as the curvature varies from positive values (outside CNTs) to negative values (inside CNTs). The free energy change of the rate-determining step of ORR on the concave inner surface of Si-doped CNTs is smaller than that on the counterpart of Si-doped graphene, while that on the convex outer surface of Si-doped CNTs is larger than that on Si-doped graphene. Uncovering this new ORR mechanism on silicon-doped carbon electrodes is significant as the same principle could be applied to the development of various other metal-free efficient ORR catalysts for fuel cell applications.

  6. Cobalt-Doped Antimony/Tin Oxide Sol-Gels on Carbon-Silicon Layers for Modeling Sol-Gel-Carbon Fiber Interfaces

    NASA Astrophysics Data System (ADS)

    Demar Richard, Brandon; Alcantar, Norma; Thomas, Sylvia Wilson

    2012-11-01

    This research presents a novel thermo-responsive sol-gel (dopant) combination and evaluation of the actuating responses due to various heat treatment temperatures. In this project, samples of antimony-doped tin oxide (ATO) doped with 0.1% cobalt oxide (0.1% Co2O3) sol-gel on carbon/silicon substrates are used to model the implementation of sol-gel coatings into carbon fiber composite systems. While ATO is a well-known transparent conductive material, the addition of cobalt oxide (Co2O3) alters its morphology and optical parameters at low annealing temperatures. By altering the ATO (0.1% Co2O3) heat treatment temperatures, the grain size starts to increase at 200 °C. However, when approaching 500 °C, Raman spectroscopy shows that the increase in intensity of ATO (0.1% Co2O3) is lower than ATO undoped. Scanning electron microscopy is used for imaging, and energy dispersive spectroscopy will be used for the composition analysis. Optical reflectance is reported via Fourier transform infrared (FTIR) spectroscopy and Raman spectroscopy analysis.

  7. Cobalt-Doped Antimony/Tin Oxide Sol--Gels on Carbon--Silicon Layers for Modeling Sol--Gel-Carbon Fiber Interfaces

    NASA Astrophysics Data System (ADS)

    Richard, Brandon Demar; Alcantar, Norma; Thomas, Sylvia Wilson

    2012-11-01

    This research presents a novel thermo-responsive sol--gel (dopant) combination and evaluation of the actuating responses due to various heat treatment temperatures. In this project, samples of antimony-doped tin oxide (ATO) doped with 0.1% cobalt oxide (0.1% Co2O3) sol--gel on carbon/silicon substrates are used to model the implementation of sol--gel coatings into carbon fiber composite systems. While ATO is a well-known transparent conductive material, the addition of cobalt oxide (Co2O3) alters its morphology and optical parameters at low annealing temperatures. By altering the ATO (0.1% Co2O3) heat treatment temperatures, the grain size starts to increase at 200 °C. However, when approaching 500 °C, Raman spectroscopy shows that the increase in intensity of ATO (0.1% Co2O3) is lower than ATO undoped. Scanning electron microscopy is used for imaging, and energy dispersive spectroscopy will be used for the composition analysis. Optical reflectance is reported via Fourier transform infrared (FTIR) spectroscopy and Raman spectroscopy analysis.

  8. The effects of silicon doping on the performance of PMAN carbon anodes in Li-ion cells

    SciTech Connect

    Guidotti, R.A.; Johnson, B.J.; Even, W. Jr.

    1996-05-01

    Carbons derived from polymethylacrylonitrile (PMAN) have been studied for use as intercalation anodes in Li-ion cells. The effect of Si doping upon the electrochemical performance of PMAN carbons was studied using tetravinylsilane (TVS) and tetramethysilane (TMS) as sources of Si during the formation of the PMAN precursors. The carbons were characterized by galvanostatic cycling, cyclic voltammetry, and complex impedance. The presence of 9 to 11 w/o Si in the PMAN lattice greatly increased the irreversible capacity of these materials.

  9. Transmutation doping of silicon solar cells

    NASA Technical Reports Server (NTRS)

    Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

    1977-01-01

    Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

  10. Transmutation doping of silicon solar cells

    NASA Technical Reports Server (NTRS)

    Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

    1977-01-01

    Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

  11. Plasmonic Properties of Silicon Nanocrystals Doped with Boron and Phosphorus.

    PubMed

    Kramer, Nicolaas J; Schramke, Katelyn S; Kortshagen, Uwe R

    2015-08-12

    Degenerately doped silicon nanocrystals are appealing plasmonic materials due to silicon's low cost and low toxicity. While surface plasmonic resonances of boron-doped and phosphorus-doped silicon nanocrystals were recently observed, there currently is poor understanding of the effect of surface conditions on their plasmonic behavior. Here, we demonstrate that phosphorus-doped silicon nanocrystals exhibit a plasmon resonance immediately after their synthesis but may lose their plasmonic response with oxidation. In contrast, boron-doped nanocrystals initially do not exhibit plasmonic response but become plasmonically active through postsynthesis oxidation or annealing. We interpret these results in terms of substitutional doping being the dominant doping mechanism for phosphorus-doped silicon nanocrystals, with oxidation-induced defects trapping free electrons. The behavior of boron-doped silicon nanocrystals is more consistent with a strong contribution of surface doping. Importantly, boron-doped silicon nanocrystals exhibit air-stable plasmonic behavior over periods of more than a year.

  12. Doping silicon with erbium by recoil implantation

    NASA Astrophysics Data System (ADS)

    Feklistov, K. V.; Abramkin, D. S.; Obodnikov, V. I.; Popov, V. P.

    2015-08-01

    In attempt to achieve strong surface doping of silicon with erbium, silicon was implanted with 250-keV argon ions through a thin erbium film deposited on the target surface. As a result, erbium recoil atoms were knocked out of the film and incorporated into the silicon substrate. In this way, silicon was doped with erbium atoms to a concentration of 5 × 1020 cm-3 within a depth slightly above 10 nm. For the formation of stable optically active ErO n complexes, oxygen recoil atoms were also incorporated into silicon. During the subsequent heat treatment, about half of the implanted erbium atoms segregated in the surface SiO2 layer. The main fraction of erbium retained in silicon after heat treatments is optically inactive.

  13. Doping silicon nanocrystals and quantum dots

    NASA Astrophysics Data System (ADS)

    Oliva-Chatelain, Brittany L.; Ticich, Thomas M.; Barron, Andrew R.

    2016-01-01

    The ability to incorporate a dopant element into silicon nanocrystals (NC) and quantum dots (QD) is one of the key technical challenges for the use of these materials in a number of optoelectronic applications. Unlike doping of traditional bulk semiconductor materials, the location of the doping element can be either within the crystal lattice (c-doping), on the surface (s-doping) or within the surrounding matrix (m-doping). A review of the various synthetic strategies for doping silicon NCs and QDs is presented, concentrating on the efficacy of the synthetic routes, both in situ and post synthesis, with regard to the structural location of the dopant and the doping level. Methods that have been applied to the characterization of doped NCs and QDs are summarized with regard to the information that is obtained, in particular to provide researchers with a guide to the suitable techniques for determining dopant concentration and location, as well as electronic and photonic effectiveness of the dopant.

  14. Micro-ultracapacitors with highly doped silicon nanowires electrodes

    PubMed Central

    2013-01-01

    Highly n-doped silicon nanowires (SiNWs) with several lengths have been deposited via chemical vapor deposition on silicon substrate. These nanostructured silicon substrates have been used as electrodes to build symmetrical micro-ultracapacitors. These devices show a quasi-ideal capacitive behavior in organic electrolyte (1 M NEt4BF4 in propylene carbonate). Their capacitance increases with the length of SiNWs on the electrode and has been improved up to 10 μFcm−2 by using 20 μm SiNWs, i.e., ≈10-fold bulk silicon capacitance. This device exhibits promising galvanostatic charge/discharge cycling stability with a maximum power density of 1.4 mW cm−2. PMID:23336289

  15. Pulsed energy synthesis and doping of silicon carbide

    DOEpatents

    Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

    1995-06-20

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  16. Pulsed energy synthesis and doping of silicon carbide

    DOEpatents

    Truher, Joel B.; Kaschmitter, James L.; Thompson, Jesse B.; Sigmon, Thomas W.

    1995-01-01

    A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

  17. Silicon solar cells improved by lithium doping

    NASA Technical Reports Server (NTRS)

    Berman, P. A.

    1970-01-01

    Results of conference on characteristics of lithium-doped silicon solar cells and techniques required for fabrication indicate that output of cells has been improved to point where cells exhibit radiation resistance superior to those currently in use, and greater control and reproducibility of cell processing have been achieved.

  18. Aluminum doping improves silicon solar cells

    NASA Technical Reports Server (NTRS)

    1966-01-01

    Aluminum doped silicon solar cells with resistivities in the 10- to 20-ohm centimeter range have broad spectral response, high efficiency and long lifetimes in nuclear radiation environments. Production advantages include low material rejection and increased production yields, and close tolerance control.

  19. Silicon germanium carbon heteroepitaxial growth on silicon

    NASA Astrophysics Data System (ADS)

    Mayer, James W.

    1993-10-01

    This project represents the initiation of band-gap engineering of Si-based devices at Arizona State University by James W. Mayer. While at Cornell, he directed the Microscience and Technology program supported by the Semiconductor Research Corporation. His Work on heteoepitaxy of SiGe on silicon convinced him that heteroepitaxy on Si was a viable technique for forming smaller band gap layers on silicon but the requirement was for larger energy-gap materials. In the fall of 1991, James Mayer visited Tom Picraux of Sandia National Laboratories and Clarence Tracy of Motorola Semiconductor Products to discuss the possibility of a joint program to investigate Silicon Germanium Carbon Heteroepitaxial Growth on Silicon. This represented a new research and development initiate for band gap engineering.

  20. Nitrogen doping in carbon nanotubes.

    PubMed

    Ewels, C P; Glerup, M

    2005-09-01

    Nitrogen doping of single and multi-walled carbon nanotubes is of great interest both fundamentally, to explore the effect of dopants on quasi-1D electrical conductors, and for applications such as field emission tips, lithium storage, composites and nanoelectronic devices. We present an extensive review of the current state of the art in nitrogen doping of carbon nanotubes, including synthesis techniques, and comparison with nitrogen doped carbon thin films and azofullerenes. Nitrogen doping significantly alters nanotube morphology, leading to compartmentalised 'bamboo' nanotube structures. We review spectroscopic studies of nitrogen dopants using techniques such as X-ray photoemission spectroscopy, electron energy loss spectroscopy and Raman studies, and associated theoretical models. We discuss the role of nanotube curvature and chirality (notably whether the nanotubes are metallic or semiconducting), and the effect of doping on nanotube surface chemistry. Finally we review the effect of nitrogen on the transport properties of carbon nanotubes, notably its ability to induce negative differential resistance in semiconducting tubes.

  1. Disordered electronic and magnetic systems - Transition metal (manganese) and rare earth (gadolinium) doped amorphous group IV semiconductors (carbon, silicon, germanium)

    NASA Astrophysics Data System (ADS)

    Zeng, Li

    2007-12-01

    While the physics of electrical doping of semiconductors has been well understood for decades, magnetic doping and the interactions between the carriers and the magnetic moments in semiconductors are still under active investigation for various applications, such as spintronics and quantum computing. Our systematic studies on transition-metal-doped (TM-doped) and rare-earth-doped (RE-doped) amorphous group IV elemental semiconductors provide unique insight into the rich physics of this type of materials. Our model system is the e-beam coevaporated a-GdxSi1-x films. Magnetron cosputtered a-GdxSi 1-x films, despite having very different film morphology at the 10-nm scale from the e-beam coevaporated films, are demonstrated to possess almost the same physical properties. Cosputtered a-GdxC1-x (:Hy) and Gd ion-implanted ta-C (ta-C1-x:Gd x) films are studied for Gd in different a-C matrices with different sp2/sp 3 ratio. All doped a-C films are on the insulating side of the metal-insulator transition. Very similar to a-Gd xSi1-x films, Gd possesses a large magnetic moment in a-C. The moment-moment and moment-carrier interactions lead to a spin-glass ground state and large negative magnetoresistance (MR) below a crossover temperature T' in both a-Gd xC1-x<(:Hy) and ta-C1-x:Gdx films. A small positive MR is found above T'. Transition metal Mn has always been believed to possess a large local moment in Si or Ge. However, e-beam coevaporated a-MnxSi1-x films are found to show a quenched local moment for Mn concentration as low as x=0.005 and up to x=0.175. All films are purely paramagnetic and have very small saturation moments. Unlike Gd, which provides both carriers and local moment, Mn only provides electrical carriers in a-Si. These results suggest an itinerant non-magnetic Mn states in a-Si; the insulating behavior is a result of the strong structural disorder. This quenching of the local Mn moment has not been predicted by any existing theory. Consistent with the

  2. Piezoresistance and hole transport in beryllium-doped silicon.

    NASA Technical Reports Server (NTRS)

    Littlejohn, M. A.; Robertson, J. B.

    1972-01-01

    The resistivity and piezoresistance of p-type silicon doped with beryllium have been studied as a function of temperature, crystal orientation, and beryllium doping concentration. It is shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gauge factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, while the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.

  3. Dispersion toughened silicon carbon ceramics

    DOEpatents

    Wei, G.C.

    1984-01-01

    Fracture resistant silicon carbide ceramics are provided by incorporating therein a particulate dispersoid selected from the group consisting of (a) a mixture of boron, carbon and tungsten, (b) a mixture of boron, carbon and molybdenum, (c) a mixture of boron, carbon and titanium carbide, (d) a mixture of aluminum oxide and zirconium oxide, and (e) boron nitride. 4 figures.

  4. Photocurrent spectrum measurements of doped black silicon

    NASA Astrophysics Data System (ADS)

    Zhang, S. K.; Ahmar, H.; Chen, B.; Wang, W.; Alfano, R.

    2011-03-01

    Photocurrent spectra of doped black silicon (BSi) samples were investigated using metal-semiconductor-metal (MSM) structure. The BSi samples were fabricated through femtosecond-laser doping method. Two pieces of samples were annealed in nitrogen ambient for 30 minutes at different temperatures 350°C and 700°C. One control sample remains without annealing. It was found that the doped black silicon samples have an electron mobility as low as 40~50 cm2/V s but a conductivity as high as 4 ~ 5 Scm-1. The high conductivity allows making electrodes by directly contacting metal stripes onto the black silicon surfaces. For the sample without annealing, its photocurrent spectrum covers a wavelength range from 400 nm to 1200 nm. For the sample annealed at 350°C, no significant improvement was found except disappearance of a defect induced photocurrent peak at 660 nm. Further annealing at 700°C, as observed for the third sample, was found to greatly help enhance photoresponse in the wavelength range from 400 nm to 800 nm. The photocurrent spectra under different biases were also measured. With the increasing of bias from 0 to 0.6 V, the peak photoresponse was enhanced by about 5 times while large dark current brought in substantial noise level as well.

  5. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOEpatents

    Corman, Gregory Scot; Luthra, Krishan Lal

    1999-01-01

    A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  6. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOEpatents

    Corman, Gregory Scot; Luthra, Krishan Lal

    2002-01-01

    A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  7. Magnetism and the absence of superconductivity in the praseodymium–silicon system doped with carbon and boron

    SciTech Connect

    de la Venta, J.; Basaran, Ali C.; Grant, T.; Gallardo-Amores, J. M.; Ramirez, J. G.; Alario-Franco, M. A.; Fisk, Z.; Schuller, Ivan K.

    2013-08-01

    We searched for new structural, magnetic and superconductivity phases in the Pr–Si system using high-pressure high-temperature and arc melting syntheses. Both high and low Si concentration areas of the phase diagram were explored. Although a similar approach in the La–Si system produced new stable superconducting phases, in the Pr–Si system we did not find any new superconductors. At low Si concentrations, the arc-melted samples were doped with C or B. It was found that addition of C gave rise to multiple previously unknown ferromagnetic phases. Furthermore, X-ray refinement of the undoped samples confirmed the existence of the so far elusive Pr3Si2 phase.

  8. Superlattice doped layers for amorphous silicon photovoltaic cells

    DOEpatents

    Arya, Rajeewa R.

    1988-01-12

    Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

  9. Recombination Activity of Iron in Boron Doped Silicon

    NASA Astrophysics Data System (ADS)

    Yli-Koski, M.; Palokangas, M.; Sokolov, V.; Storgårds, J.; Väinölä, H.; Holmberg, H.; Sinkkonen, J.

    The charge carrier lifetime in iron contaminated boron doped silicon wafers was determined by surface photovoltage, SPV, and microwave photoconductive decay, µPCD, techniques. Our results show that the charge carrier lifetime in boron doped silicon wafers depends on the boron concentration when the lifetime is limited by iron-boron pairs.

  10. Electronic properties and gas adsorption behaviour of pristine, silicon-, and boron-doped (8, 0) single-walled carbon nanotube: A first principles study.

    PubMed

    Azam, Mohd Asyadi; Alias, Farizul Muiz; Tack, Liew Weng; Seman, Raja Noor Amalina Raja; Taib, Mohamad Fariz Mohamad

    2017-08-01

    Carbon nanotubes (CNTs) have received enormous attention due to their fascinating properties to be used in various applications including electronics, sensing, energy storage and conversion. The first principles calculations within density functional theory (DFT) have been carried out in order to investigate the structural, electronic and optical properties of un-doped and doped CNT nanostructures. O2, CO2, and CH3OH have been chosen as gas molecules to study the adsorption properties based on zigzag (8,0) SWCNTs. The results demonstrate that the adsorption of O2, CO2, and CH3OH gas molecules on pristine, Si-doped and B-doped SWCNTs are either physisorption or chemisorption. Moreover, the electronic properties indicating SWCNT shows significant improvement toward gas adsorption which provides the impact of selecting the best gas sensor materials towards detecting gas molecule. Therefore, these pristine, Si-, and B-doped SWCNTs can be considered to be very good potential candidates for sensing application. Copyright © 2017 Elsevier Inc. All rights reserved.

  11. Peltier effect in doped silicon microchannel plates

    NASA Astrophysics Data System (ADS)

    Pengliang, Ci; Jing, Shi; Fei, Wang; Shaohui, Xu; Zhenya, Yang; Pingxiong, Yang; Lianwei, Wang; Chen, Gao; Chu, Paul K.

    2011-12-01

    The Seebeck coefficient is determined from silicon microchannel plates (Si MCPs) prepared by photo-assisted electrochemical etching at room temperature (25 °C). The coefficient of the sample with a pore size of 5 × 5 μm2, spacing of 1 μm and thickness of about 150 μm is -852 μV/K along the edge of the square pore. After doping with boron and phosphorus, the Seebeck coefficient diminishes to 256 μV/K and -117 μV/K along the edge of the square pore, whereas the electrical resistivity values are 7.5 × 10-3 Ω·cm and 1.9 × 10-3 Ω·cm, respectively. Our data imply that the Seebeck coefficient of the Si MCPs is related to the electrical resistivity and is consistent with that of bulk silicon. Based on the boron and phosphorus doped samples, a simple device is fabricated to connect the two type Si MCPs to evaluate the Peltier effect. When a proper current passes through the device, the Peltier effect is evidently observed. Based on the experimental data and the theoretical calculation, the estimated intrinsic figure of merit ZT of the unicouple device and thermal conductivity of the Si MCPs are 0.007 and 50 W/(m·K), respectively.

  12. Pyrolytic carbon coated black silicon

    PubMed Central

    Shah, Ali; Stenberg, Petri; Karvonen, Lasse; Ali, Rizwan; Honkanen, Seppo; Lipsanen, Harri; Peyghambarian, N.; Kuittinen, Markku; Svirko, Yuri; Kaplas, Tommi

    2016-01-01

    Carbon is the most well-known black material in the history of man. Throughout the centuries, carbon has been used as a black material for paintings, camouflage, and optics. Although, the techniques to make other black surfaces have evolved and become more sophisticated with time, carbon still remains one of the best black materials. Another well-known black surface is black silicon, reflecting less than 0.5% of incident light in visible spectral range but becomes a highly reflecting surface in wavelengths above 1000 nm. On the other hand, carbon absorbs at those and longer wavelengths. Thus, it is possible to combine black silicon with carbon to create an artificial material with very low reflectivity over a wide spectral range. Here we report our results on coating conformally black silicon substrate with amorphous pyrolytic carbon. We present a superior black surface with reflectance of light less than 0.5% in the spectral range of 350 nm to 2000 nm. PMID:27174890

  13. Photoluminescence in erbium doped amorphous silicon oxycarbide thin films

    NASA Astrophysics Data System (ADS)

    Gallis, Spyros; Huang, Mengbing; Efstathiadis, Harry; Eisenbraun, Eric; Kaloyeros, Alain E.; Nyein, Ei Ei; Hommerich, Uwe

    2005-08-01

    Photoluminescence (PL) in Er-doped amorphous silicon oxycarbide (a-SiCxOy:Er) thin films, synthesized via thermal chemical vapor deposition, was investigated for carbon and oxygen concentrations in the range of 0-1.63. Intense room-temperature PL was observed at 1540 nm, with the PL intensity being dependent on the carbon and oxygen content. The strongest PL intensity was detected for a-SiC0.53O0.99:Er when pumped at 496.5 nm, with ˜20 times intensity enhancement as compared to a-SiO2:Er. Broadband excitation in the visible was observed for a-SiC0.53O0.99:Er. Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy analyses suggest that the formation of Si-C-O networks plays an important role in enhancing the Er optical activity in a-SiCxOy:Er films.

  14. Growth Of Delta-Doped Layer On Silicon CCD

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.; Terhune, Robert W.; Hecht, Michael H.

    1995-01-01

    Response to ultraviolet light enhanced. Back-side-illuminated silicon charge-coupled device fabricated exhibiting nearly 100 percent internal quantum efficiency in near ultraviolet, by using molecular beam epitaxy to grow thin crystalline-silicon layer containing high concentration of boron (p-type dopant). By confining dopant atoms to one or few atomic layers in silicon lattice, concentration-vs.-depth profile made to resemble Dirac delta function, and resulting silicon layer said to be "delta-doped."

  15. Field Evaporation of Grounded Arsenic Doped Silicon Clusters

    NASA Astrophysics Data System (ADS)

    Deng, Zexiang; She, Juncong; Li, Zhibing; Wang, Weiliang; Chen, Qiang

    2015-08-01

    We have investigated the field evaporation of grounded arsenic (As) doped silicon (Si) clusters composed of 52 atoms with density functional theory (DFT) to mimic Si nano structures of hundreds of nanometers long standing on a substrate. Six cluster structures with different As doping concentrations and dopant locations are studied. The critical evaporation electric fields are found to be lower for clusters with higher doping concentrations and doping sites closer to the surface. We attribute the difference to the difference in binding energies corresponding to the different As-doping concentrations and to the doping locations. Our theoretical study could shed light on the stability of nano apexes under high electric field.

  16. Interaction of nucleobases with silicon doped and defective silicon doped graphene and optical properties.

    PubMed

    Mudedla, Sathish Kumar; Balamurugan, Kanagasabai; Kamaraj, Manoharan; Subramanian, Venkatesan

    2016-01-07

    The interaction of nucleobases (NBs) with the surface of silicon doped graphene (SiGr) and defective silicon doped graphene (dSiGr) has been studied using electronic structure methods. A systematic comparison of the calculated interaction energies (adsorption strength) of NBs with the surface of SiGr and dSiGr with those of pristine graphene (Gr) has also been made. The doping of graphene with silicon increases the adsorption strength of NBs. The introduction of defects in SiGr further enhances the strength of interaction with NBs. The appreciable stability of complexes (SiGr-NBs and dSiGr-NBs) arises due to the partial electrostatic and covalent (Si···O(N)) interaction in addition to π-π stacking. The interaction energy increases with the size of graphene models. The strong interaction between dSiGr-NBs and concomitant charge transfer causes significant changes in the electronic structure of dSiGr in contrast to Gr and SiGr. Further, the calculated optical properties of all the model systems using time dependent density functional theory (TD-DFT) reveal that absorption spectra of SiGr and dSiGr undergo appreciable changes after adsorption of NBs. Thus, the significant variations in the HOMO-LUMO gap and absorption spectra of dSiGr after interaction with the NBs can be exploited for possible applications in the sensing of DNA nucleobases.

  17. Guided photoluminescence study of Nd-doped silicon rich silicon oxide and silicon rich silicon nitride waveguides

    NASA Astrophysics Data System (ADS)

    Pirasteh, Parastesh; Charrier, Joël; Dumeige, Yannick; Doualan, Jean-Louis; Camy, Patrice; Debieu, Olivier; Liang, Chuan-hui; Khomenkova, Larysa; Lemaitre, Jonathan; Boucher, Yann G.; Gourbilleau, Fabrice

    2013-07-01

    Planar waveguides made of Nd3+-doped silicon rich silicon oxide (SRSO) and silicon rich silicon nitride (SRSN) have been fabricated by reactive magnetron sputtering and characterized with special emphasis on the comparison of the guided photoluminescence (PL) properties of these two matrices. Guided fluorescence excited by top surface pumping at 488 nm on planar waveguides was measured as a function of the distance between the excitation area and the output of the waveguide, as well as a function of the pump power density. The PL intensity increased linearly with pump power without any saturation even at high power. The linear intensity increase of the Nd3+ guided PL under a non-resonant excitation (488 nm) confirms the efficient coupling between either Si-np and rare-earth ions for SRSO or radiative defects and rare earth ions for SRSN. The guided fluorescences at 945 and 1100 nm were observed until 4 mm and 8 mm of the output of the waveguide for Nd3+ doped SRSO and SRSN waveguides, respectively. The guided fluorescence decays of Nd3+-doped-SRSO and -SRSN planar waveguides have been measured and found equal to 97 μs ±7 and 5 μs ± 2, respectively. These results show notably that the Nd3+-doped silicon rich silicon oxide is a very promising candidate on the way to achieve a laser cavity at 1.06 μm.

  18. Resistless lithography - selective etching of silicon with gallium doping regions

    NASA Astrophysics Data System (ADS)

    Abdullaev, D.; Milovanov, R.; Zubov, D.

    2016-12-01

    This paper presents the results for used of resistless lithography with a further reactive-ion etching (RIE) in various chemistry after local (Ga+) implantation of silicon with different doping dose and different size doped regions. We describe the different etching regimes for pattern transfer of FIB implanted Ga masks in silicon. The paper studied the influence of the implantation dose on the silicon surface, the masking effect and the mask resistance to erosion at dry etching. Based on these results we conclude about the possibility of using this method to create micro-and nanoscale silicon structures.

  19. Heavy doping effects in high efficiency silicon solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.

    1984-01-01

    Several of the key parameters describing the heavily doped regions of silicon solar cells are examined. The experimentally determined energy gap narrowing and minority carrier diffusivity and mobility are key factors in the investigation.

  20. Doping efficiency of phosphorus doped silicon nanocrystals embedded in a SiO2 matrix

    NASA Astrophysics Data System (ADS)

    Gutsch, S.; Hartel, A. M.; Hiller, D.; Zakharov, N.; Werner, P.; Zacharias, M.

    2012-06-01

    Strongly size controlled silicon nanocrystals in silicon oxynitride matrix were prepared using plasma enhanced chemical vapor deposition following the superlattice approach. Doping was achieved by adding diluted phosphine as a precursor gas. Phosphorus quantification was done by secondary ion mass spectrometry. A model based on Poissonian distributions of interface defects and dopants is proposed to calculate the defects and the dopants per silicon nanocrystal as a function of phosphorus concentration. The model requires the comparison between the photoluminescence spectra from passivated and unpassivated samples. Finally, the doping efficiency of silicon nanocrystals embedded in silicon oxynitride is estimated to be >20%.

  1. Doping of graphene induced by boron/silicon substrate.

    PubMed

    Dianat, Arezoo; Liao, Zhongquan; Gall, Martin; Zhang, Tao; Gutierrez, Rafael; Zschech, Ehrenfried; Cuniberti, Gianaurelio

    2017-04-12

    In this work, we show the doping of graphene most likely from heteroatoms induced by the substrate using Raman spectrum, X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX) and ab initio molecular dynamics simulations. The doping of graphene on a highly boron-doped silicon substrate was achieved by an annealing at 400 K for about 3 hours in an oven with air flow. With the same annealing, only the Raman features similar to that from the pristine graphene were observed in the freestanding graphene and the graphene on a typical Si/SiO2 wafer. Ab initio molecular dynamics (MD) simulations were performed for defected graphene on boron-doped silicon substrate at several temperatures. All vacancy sites in the graphene are occupied either with B atoms or Si atoms resulting in the mixed boron-silicon doping of the graphene. The MD simulations validated the experimetal finding of graphene doped behaviour observed by Raman spectrum. The electronic structure analysis indicated the p-type nature of doped graphene. The observed doping by the possible incorporation of heteroatoms into the graphene, simply only using 400 K annealing the boron-doped Si substrate, could provide a new approach to synthesize doped graphene in a more economic way.

  2. Excess carbon in silicon carbide

    NASA Astrophysics Data System (ADS)

    Shen, X.; Oxley, M. P.; Puzyrev, Y.; Tuttle, B. R.; Duscher, G.; Pantelides, S. T.

    2010-12-01

    The application of SiC in electronic devices is currently hindered by low carrier mobility at the SiC/SiO2 interfaces. Recently, it was reported that 4H-SiC/SiO2 interfaces might have a transition layer on the SiC substrate side with C/Si ratio as high as 1.2, suggesting that carbon is injected into the SiC substrate during oxidation or other processing steps. We report finite-temperature quantum molecular dynamics simulations that explore the behavior of excess carbon in SiC. For SiC with 20% excess carbon, we find that, over short time (˜24 ps), carbon atoms bond to each other and form various complexes, while the silicon lattice is largely unperturbed. These results, however, suggest that at macroscopic times scale, C segregation is likely to occur; therefore a transition layer with 20% extra carbon would not be stable. For a dilute distribution of excess carbon, we explore the pairing of carbon interstitials and show that the formation of dicarbon interstitial cluster is kinetically very favorable, which suggests that isolated carbon clusters may exist inside SiC substrate.

  3. Doped and Undoped Zinc Oxide Nanostructures on Silicon Wafers

    NASA Astrophysics Data System (ADS)

    Chubenko, E.; Bondarenko, V.

    2013-05-01

    We present results of hydrothermal deposition of undoped and Al doped ZnO nanocrystals on nanocrystalline silicon. ZnO nanocrystals were deposited in an equimolar zinc nitride and hexamethylenetetramine solution. Aluminum nitride was used as Al precursor. The difference of the morphology of doped and undoped ZnO nanocrystals is discussed. Photoluminescence properties of the obtained nanocrystals are shown.

  4. Growth of silicon-doped Al0.6Ga0.4N with low carbon concentration at high growth rate using high-flow-rate metal organic vapor phase epitaxy reactor

    NASA Astrophysics Data System (ADS)

    Ikenaga, Kazutada; Mishima, Akira; Yano, Yoshiki; Tabuchi, Toshiya; Matsumoto, Koh

    2016-05-01

    The relationship between the carbon concentration and electrical characteristics of silicon-doped AlGaN (Al > 0.5) was investigated using a high-flow-rate metal organic vapor phase epitaxy (MOVPE) reactor. The carbon concentration and electrical properties of AlGaN (Al > 0.5) were measured as a function of the growth rate, V/III ratio, and growth temperature. The growth rate of Al0.6Ga0.4N was linearly controlled up to 7.2 µm/h under a constant ammonia (NH3) flow rate. However, a decrease in V/III ratio resulted in an increase in carbon concentration to 8 × 1017 cm-3. With increased growth temperature, the carbon concentration decreased to less than 2 × 1017 cm-3 without showing any reduction in growth rate. As a result, n-type Al0.6Ga0.4N with a carrier concentration of 5.4 × 1018 cm-3 and a resistivity of 2.2 × 10-2 Ω·cm was obtained.

  5. Light emission in silicon from carbon nanotubes.

    PubMed

    Gaufrès, Etienne; Izard, Nicolas; Noury, Adrien; Le Roux, Xavier; Rasigade, Gilles; Beck, Alexandre; Vivien, Laurent

    2012-05-22

    The use of optics in microelectronic circuits to overcome the limitation of metallic interconnects is more and more considered as a viable solution. Among future silicon compatible materials, carbon nanotubes are promising candidates thanks to their ability to emit, modulate, and detect light in the wavelength range of silicon transparency. We report the first integration of carbon nanotubes with silicon waveguides, successfully coupling their emission and absorption properties. A complete study of this coupling between carbon nanotubes and silicon waveguides was carried out, which led to the demonstration of the temperature-independent emission from carbon nanotubes in silicon at a wavelength of 1.3 μm. This represents the first milestone in the development of photonics based on carbon nanotubes on silicon.

  6. Oxygen precipitation behavior in heavily arsenic doped silicon crystals

    NASA Astrophysics Data System (ADS)

    Haringer, Stephan; Gambaro, Daniela; Porrini, Maria

    2017-01-01

    Silicon crystals containing different levels of arsenic concentration and oxygen content were grown, and samples were taken at various positions along the crystal, to study the influence of three main factors, i.e. the initial oxygen content, the dopant concentration and the thermal history, on the nucleation of oxygen precipitates during crystal growth and cooling in the puller. The crystal thermal history was reconstructed by means of computer modeling, simulating the temperature distribution in the crystal at several growth stages. The oxygen precipitation was characterized after a thermal cycle of 4 h at 800 °C for nuclei stabilization +16 h at 1000 °C for nuclei growth. Oxygen precipitates were counted under microscope on the cleaved sample surface after preferential etching. Lightly doped silicon samples were also included, as reference. Our results show that even in heavily arsenic doped silicon the oxygen precipitation is a strong function of the initial oxygen concentration, similar to what has been observed for lightly doped silicon. In addition, a precipitation retardation effect is observed in the arsenic doped samples when the dopant concentration is higher than 1.7×1019 cm-3 compared to lightly doped samples with the same initial oxygen content and crystal thermal history. Finally, a long permanence time of the crystal in the temperature range between 450 °C and 750 °C enhances the oxygen precipitation, showing that this is an effective temperature range for oxygen precipitation nucleation in heavily arsenic doped silicon.

  7. Cathodic deposition of amorphous alloys of silicon, carbon, and fluorine

    SciTech Connect

    Lee, C.H.; Kroger, F.A.

    1982-05-01

    Amorphous silicon containing fluorine and carbon, pure and doped with boron or phosphorus, was deposited cathodically from solutions of K/sub 2/SiF/sub 6/ in acetone with HF. The conditions for optimum deposition were determined, and the deposits were characterized by electron microprobe x-ray emission, electrical conductivity, and infrared absorption. Doping with phosphorus causes a change from p- to n-type semiconductor behavior, with a maximum of resistivity >10/sup 13/ /OMEGA/ cm at the compensation point. 48 refs.

  8. Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

    NASA Astrophysics Data System (ADS)

    König, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

    2017-04-01

    All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime and tunnelling current measurements.

  9. Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

    PubMed Central

    König, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

    2017-01-01

    All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime and tunnelling current measurements. PMID:28425460

  10. Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide.

    PubMed

    König, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

    2017-04-20

    All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime and tunnelling current measurements.

  11. Aluminum-doped crystalline silicon and its photovoltaic application

    NASA Astrophysics Data System (ADS)

    Yuan, Shuai; Yu, Xuegong; Gu, Xin; Feng, Yan; Lu, Jinggang; Yang, Deren

    2016-11-01

    The impact of Al doping with the concentrations in the range of 0.01-0.1 ppmw on the performance of silicon wafers and solar cells is studied. The effective segregation coefficient of impurity keff of Al in Si is obtained as 0.0029, which is calculated as 0.0027, supporting that Al should be totally ionized and occupy the substitutional sites in silicon and serve as the +1 dopant. It is found that the open-circuit voltages (Uoc), short-circuit currents (Isc) and photo-electrical conversion efficiency of the Al-containing solar cells decrease with the increase of Al concentrations because of Al-related deep level recombination centers. The average absolute efficiency of Al-doped silicon solar cells is 0.34% lower than that of Ga-doped-only cells, and the largest difference can be about 0.62%. Moreover, Al doped silicon solar cells show no light induced efficiency degradation, and the average efficiency maintains above 17.78%, which is comparable at the final state to that of normal B-doped silicon solar cells.

  12. Catalytic phosphorus and boron doping of amorphous silicon films for application to silicon heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Ohdaira, Keisuke; Seto, Junichi; Matsumura, Hideki

    2017-08-01

    We investigate a novel doping method, catalytic impurity doping (Cat-doping), for application to the fabrication of silicon heterojunction (SHJ) solar cells. Thin n- or p-type doped layers can be formed on intrinsic amorphous Si (a-Si) films by exposing P- or B-related radicals generated by the catalytic cracking of phosphine (PH3) or diborane (B2H6) gas molecules. The passivation quality of underlying a-Si films can be maintained both for phosphorus (P) and boron (B) Cat-doping if we carefully choose the appropriate substrate temperature during Cat-doping. We confirm the rectifying and photovoltaic properties of an SHJ solar cell containing a B Cat-doped layer as a p-type a-Si emitter. These findings suggest the applicability of Cat-doping to SHJ solar cells.

  13. High-energy electron-induced damage production at room temperature in aluminum-doped silicon

    NASA Technical Reports Server (NTRS)

    Corbett, J. W.; Cheng, L. J.; Jaworowski, A.; Karins, J. P.; Lee, Y. H.; Lindstroem, L.; Mooney, P. M.; Oehrlen, G.; Wang, K. L.

    1979-01-01

    DLTS and EPR measurements are reported on aluminum-doped silicon that was irradiated at room temperature with high-energy electrons. Comparisons are made to comparable experiments on boron-doped silicon. Many of the same defects observed in boron-doped silicon are also observed in aluminum-doped silicon, but several others were not observed, including the aluminum interstitial and aluminum-associated defects. Damage production modeling, including the dependence on aluminum concentration, is presented.

  14. Deep Trench Doping by Plasma Immersion Ion Implantation in Silicon

    SciTech Connect

    Nizou, S.; Vervisch, V.; Etienne, H.; Torregrosa, F.; Roux, L.; Ziti, M.; Alquier, D.; Roy, M.

    2006-11-13

    The realization of three dimensional (3D) device structures remains a great challenge in microelectronics. One of the main technological breakthroughs for such devices is the ability to control dopant implantation along silicon trench sidewalls. Plasma Immersion Ion Implantation (PIII) has shown its wide efficiency for specific doping processing in semiconductor applications. In this work, we propose to study the capability of PIII method for large scale silicon trench doping. Ultra deep trenches with high aspect ratio were etched on 6'' N type Si wafers. Wafers were then implanted with a PIII Pulsion system using BF3 gas source at various pressures and energies. The obtained results evidence that PIII can be used and are of grateful help to define optimized processing conditions to uniformly dope silicon trench sidewalls through the wafers.

  15. Dependence of resistivity on the doping level of polycrystalline silicon

    NASA Technical Reports Server (NTRS)

    Fripp, A. L.

    1975-01-01

    The electrical resistivity of polycrystalline silicon films has been studied as a function of doping concentration and heat treatment. The films were grown by the chemical vapor decomposition of silane on oxidized silicon wafers. The resistivity of the as-deposited films was widely scattered but independent of dopant atom concentration at the lightly doped levels and was strong function of dopant level in the more heavily doped regions. Postdeposition heat treatments in an oxidizing atmosphere remove scatter in the data. The resultant resistivity for dopant levels less than 10 to the 16th atoms/per cu cm was approximately equal to that of intrinsic silicon. In the next 2 orders of magnitude increase in dopant level, the resistivity dropped 6 orders of magnitude. A model, based on high dopant atom segregation in the grain boundaries, is proposed to explain the results.

  16. Superconductivity in heavily boron-doped silicon carbide

    PubMed Central

    Kriener, Markus; Muranaka, Takahiro; Kato, Junya; Ren, Zhi-An; Akimitsu, Jun; Maeno, Yoshiteru

    2008-01-01

    The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility. PMID:27878022

  17. Properties of silicon nanocrystals with boron and phosphorus doping fabricated via silicon rich oxide and silicon dioxide bilayers

    NASA Astrophysics Data System (ADS)

    Chien-Jen Yang, Terry; Nomoto, Keita; Puthen-Veettil, Binesh; Lin, Ziyun; Wu, Lingfeng; Zhang, Tian; Jia, Xuguang; Conibeer, Gavin; Perez-Wurfl, Ivan

    2017-07-01

    Effects of boron and phosphorus doping on the structural, electrical, and optical properties of silicon nanocrystals in superlattice thin films were investigated. Silicon nanocrystals were fabricated via magnetron sputtering of stoichiometric silicon rich oxide and silicon dioxide bilayers followed by high temperature annealing at 1100 degrees Celsius. The characterization techniques used include: high-resolution transmission electron microscopy with energy filtering, grazing incidence x-ray diffraction, Raman, photoluminescence, and photothermal deflection spectroscopy, as well as electrical measurements. Results showed that phosphorus doping causes the loss of the bilayer structure and an increase in the average size of the silicon nanocrystals due to softening of the silicon dioxide matrix during post-sputter annealing. The result was a decrease in quantum confinement and a redshift in photoluminescence spectrum with an absorption profile similar to crystalline silicon. The undoped (intrinsic) sample maintained its bilayer structure and displayed stronger quantum confinement with higher photoluminescence peak energy and higher absorption coefficient. In-between, the boron doped sample was more similar structurally to the intrinsic sample, although merging between bilayers resulted in an extensive silicon nanocrystalline network. Optically, it displayed different effects due to photoluminescence quenching and free carrier absorption. Finally, both doped samples exhibited a decrease in electrical resistivity.

  18. Does water dope carbon nanotubes?

    SciTech Connect

    Bell, Robert A.; Payne, Michael C.; Mostofi, Arash A.

    2014-10-28

    We calculate the long-range perturbation to the electronic charge density of carbon nanotubes (CNTs) as a result of the physisorption of a water molecule. We find that the dominant effect is a charge redistribution in the CNT due to polarisation caused by the dipole moment of the water molecule. The charge redistribution is found to occur over a length-scale greater than 30 Å, highlighting the need for large-scale simulations. By comparing our fully first-principles calculations to ones in which the perturbation due to a water molecule is treated using a classical electrostatic model, we estimate that the charge transfer between CNT and water is negligible (no more than 10{sup −4} e per water molecule). We therefore conclude that water does not significantly dope CNTs, a conclusion that is consistent with the poor alignment of the relevant energy levels of the water molecule and CNT. Previous calculations that suggest water n-dopes CNTs are likely due to the misinterpretation of Mulliken charge partitioning in small supercells.

  19. Enhanced in vitro cell activity on silicon-doped vaterite/poly(lactic acid) composites.

    PubMed

    Obata, Akiko; Tokuda, Shingo; Kasuga, Toshihiro

    2009-01-01

    A biodegradable composite with silicon-species releasability was prepared using poly(l-lactic acid) (PLLA) and silicon-doped vaterite (SiV) particles. SiV with particle diameters of approximately 1 mum was prepared using aminopropyltriethoxysilane (APTES) as the silicon species by a carbonation process and then mixed with PLLA in methylene chloride according to a SiV to PLLA weight ratio of 1:2, resulting in the preparation of composite slurry. A composite film was prepared by dipping a cover glass in the slurry. The composite films were incubated in a culture medium for 7 days and the silicon concentration of the medium was measured to estimate the species releasability of the composites. A trace amount of silicon species was continuously released from the composites for 7 days, the amount depending on the content of APTES in SiV. On the composite releasing silicon species, mouse osteoblast-like cells (MC3T3-E1 cells) were significantly stimulated to proliferate and differentiate in comparison with those on a composite containing no silicon species. The proliferation of the cells on the composites releasing larger amounts of silicon species (0.51mgl(-1)day(-1)) was higher than that on the composites releasing smaller amount of the species (0.21mgl(-1)day(-1)). The silicon species in the composites were effective in enhancing the cellular functions. The composites were expected to be useful as a scaffold material for bone tissue engineering.

  20. Carbon doping of GaAs NWs

    NASA Astrophysics Data System (ADS)

    Salehzadeh Einabad, Omid

    Nanowires (NWs) have been proposed and demonstrated as the building blocks for nanoscale electronic and photonic devices such as NW field effect transistors and NW solar cells which rely on doping and trap-free carrier transport. Controlled doping of NWs and a high degree of structure and morphology control are required for device applications. However, doping of III-V nanowires such as GaAs nanowires has not been reported extensively in the literature. Carbon is a well known p-type dopant in planar GaAs due to its low diffusivity and high solubility in bulk GaAs; however its use as an intentional dopant in NW growth has not yet been investigated. In this work we studied the carbon doping of GaAs nanowires using CBr4 as the dopant source. Gold nanoparticles (NP) at the tip ofthe NWs have been used to drive the NW growth. We show that carbon doping suppresses the migration ofthe gold NPs from the tip of the NWs. In addition, we show that the carbon doping of GaAs NWs is accompanied by an increase of the axial growth rate and decrease of the lateral growth rate ofthe NWs. Carbon-doped GaAs NWs, unlike the undoped ones which are highly tapered, are rod-like. The origin of the observed morphological changes is attributed to the carbon adsorbates on the sidewalls ofthe nanowires which suppress the lateral growth of the nanowires and increase the diffusion length of the gallium adatoms on the sidewalls. Stacking fault formation consisting of alternating regIOns of zincblende and wurtzite structures has been commonly observed in NWs grown along the (111) direction. In this work, based on transmission electron microscopy (TEM) analysis, we show that carbon doping ofGaAs NWs eliminates the stacking fault formation. Raman spectroscopy was used to investigate the effects of carbon doping on the vibrational properties of the carbon-doped GaAs nanowires. Carbon doping shows a strong impact on the intrinsic longitudinal and transverse optical (La and TO) modes of the Ga

  1. Heavy doping effects in high efficiency silicon solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.; Neugroschel, A.

    1985-01-01

    The use of a (silicon)/(heavily doped polysilicon)/(metal) structure to replace the conventional high-low junction (or back-surface-field, BSF) structure of silicon solar cells was examined. The results of an experimental study designed to explore both qualitatively and quantitatively the mechanism of the improved current gain in bipolar transistors with polysilicon emitter contact are presented. A reciprocity theorem is presented that relates the short circuit current of a device, induced by a carrier generation source, to the minority carrier Fermi level in the dark. A method for accurate measurement of minority-carrier diffusion coefficients in silicon is described.

  2. Tuning luminescence properties of silicon nanocrystals by lithium doping

    NASA Astrophysics Data System (ADS)

    Klimešová, E.; Kůsová, K.; Vacík, J.; Holý, V.; Pelant, I.

    2012-09-01

    Doping silicon nanocrystals (SiNCs) provides a new way to modify their luminescence properties and tailor them for a particular application. We prepared Li-doped SiNCs and characterized them by neutron depth profiling and x-ray diffraction. Our SiNC samples are doped with around 10-100 Li atoms per one nanocrystal and their lattice slightly expands after lithium insertion. We show that the photoluminescence (PL) properties of Li-doped SiNCs are distinctly modified compared to the undoped case. The PL maximum shifts to shorter wavelengths and the PL decay time decreases, both these features being favorable for applications in photonics. The spectral blue-shift is attributed to the tensile strain in SiNCs induced by doping with lithium.

  3. Infrared luminescence from spark-processed silicon and erbium-doped spark-processed silicon

    NASA Astrophysics Data System (ADS)

    Kim, Kwanghoon

    Spark-processed silicon has substantial potential as an optical material. In the past 15 years, our group has investigated a multitude of properties of this unique material, concentrating mostly on the visible and near UV spectral region. The present study expands our endeavors to infrared photoluminescence (PL) of undoped spark-processed silicon. A broad infrared photoluminescence peak at around 945 nm under Ar ion laser excitation was observed at room temperature when investigating a spark-processed layer on a silicon wafer. This light emission is interpreted to be the result of energy transfers between certain energy levels involving the spark-processed silicon matrix. The infrared PL intensity of spark-processed silicon was found to be proportional to the excitation energy. However, telecommunication requires presently a light emission near 1.54 mum (because fiber-optics "conductors" have a minimum in absorption at this wavelength). This cannot be achieved with pure spark-processed silicon. Therefore spark-processed silicon needs to be doped with a rare-earth element such as erbium to shift the emission to longer wavelengths. It is known that erbium has a light emission from intrashell energy transition, that is, from 4I13/2 →4I15/2. Erbium was deposited on a silicon wafer followed by spark-processing, which enables diffusion of some erbium into the SiOx matrix, thus achieving opto-electronically active spark-processed silicon. Rapid thermal annealing enhances the 1.54 mum wavelength intensity from erbium-doped spark-processed silicon. The processing conditions that result in the most efficient photoluminescence have been established and will be presented in this dissertation. In contrast to erbium-doped crystalline silicon, whose light emission is highly affected by temperature (103 times reduction in intensity when heating from 12 K to 150 K), the intensity of erbium-doped spark-processed silicon decreases by only a factor of 4 when heated from 15 K to room

  4. Preparation of nitrogen-doped carbon tubes

    DOEpatents

    Chung, Hoon Taek; Zelenay, Piotr

    2015-12-22

    A method for synthesizing nitrogen-doped carbon tubes involves preparing a solution of cyanamide and a suitable transition metal-containing salt in a solvent, evaporating the solvent to form a solid, and pyrolyzing the solid under an inert atmosphere under conditions suitable for the production of nitrogen-doped carbon tubes from the solid. Pyrolyzing for a shorter period of time followed by rapid cooling resulted in a tubes with a narrower average diameter.

  5. Heavy doping effects in high efficiency silicon solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.; Neugroschel, A.

    1986-01-01

    The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

  6. Low temperature selective epitaxy of in situ doped silicon and applications in nanoscale CMOS

    NASA Astrophysics Data System (ADS)

    Ban, Ibrahim

    Continuous scaling of the Complementary Metal-Oxide-Semiconductor (CMOS) devices places stringent requirements on conventional doping technologies such as ion implantation. To keep the short channel effects under control while obtaining acceptable device characteristics, super-retrograde channel profiles and ultra-shallow source-drain junctions will be required in the sub 0.1 mum regime. In this study, in-situ doped selective silicon films grown at 800°C in an Ultra-High Vacuum Rapid Thermal Chemical Vapor Deposition (UHV-RTCVD) reactor were investigated to form highly non-uniform doping profiles for channel engineering as well as ultra-shallow p+-n junctions. In-situ boron incorporation in the low-to-heavy doping range (10 16 cm--3-1019 cm--3 ) was studied and modeled with respect to silicon growth rate, diborane (B2H6), chlorine (Cl2), and hydrogen partial pressures. Multi-layer ultra-thin (100 A-500 A) in-situ boron doped films were characterized. Effects of interface contamination (oxygen and carbon), which takes place during multi-layer growth with temperature switching, on impurity (boron, carbon, and oxygen) diffusion were investigated. Using this process, very short channel lightly-doped (Leff = 0.12 mum) and moderately-doped (Leff = 0.25 mum) NMOSFETs were fabricated with respectable device characteristics. The investigations were then extended to phosphorus incorporation using phosphine (PH3) as a source gas. In the second part of our work, a heavily boron-doped silicon deposition process was developed. Growth kinetics, surface morphology, selectivity, and out-diffusion behavior were studied. We demonstrated ultra-shallow (Xj ≤ 400 A) p+-n junctions by diffusion from these films with a high interface concentration (2 x 1020 cm--3 ) achieving the lowest sheet resistance values (Rs ≤ 50 O/Sq.) reported by any technique to date. We also demonstrated, for the first time, Zero-Depth p+-n junctions using as-deposited unannealed heavily-boron-doped silicon

  7. A Dual Axis Accelerometer Utilizing Low Doped Silicon Thermistor

    NASA Astrophysics Data System (ADS)

    Dau, Van Thanh; Dao, Dzung Viet; Hayashida, Masahiro; Dinh, Thien Xuan; Sugiyama, Susumu

    This paper presents the development of a dual axis convective microaccelerometer, whose working principle is based on the convective heat transfer and thermo-resistive effect of lightly-doped silicon. Different with developed convective accelerometer, the sensor utilizes a novel structure of the sensing element which can reduce 93% of thermal-induced stress. Moreover, the thermistors are made from low-doped p-type silicon, which has the TCR higher than that of metals and poly-silicon convective accelerometer. By using numerical method, the chip dimensions and the package size are optimized. The sensitivity of the sensor was simulated; other characteristics such as frequency response, shock resistance, noise problem are also deeply investigated. The sensor has been fabricated by MEMS process and characterized by experiments.

  8. Structural Reliability of Yttria-Doped, Hot-Pressed Silicon Nitride at Elevated Temperatures.

    DTIC Science & Technology

    1983-03-01

    Iden!ify by block number) ceramics, creep , creep rupture, fracture, silicon nitride, strength 20. ABSTRACT (Continue on reverse side If necessary and...of the yttria-doped material is found to be superior to that of magnesia -doped silicon nitride, in which creep results in the formation of microcracks...doped material is found to be superior to that of magnesia -doped silicon nitride, in which creep results in the formation of microcracks that lead to

  9. Superconductivity in carrier-doped silicon carbide

    PubMed Central

    Muranaka, Takahiro; Kikuchi, Yoshitake; Yoshizawa, Taku; Shirakawa, Naoki; Akimitsu, Jun

    2008-01-01

    We report growth and characterization of heavily boron-doped 3C-SiC and 6H-SiC and Al-doped 3C-SiC. Both 3C-SiC:B and 6H-SiC:B reveal type-I superconductivity with a critical temperature Tc=1.5 K. On the other hand, Al-doped 3C-SiC (3C-SiC:Al) shows type-II superconductivity with Tc=1.4 K. Both SiC:Al and SiC:B exhibit zero resistivity and diamagnetic susceptibility below Tc with effective hole-carrier concentration n higher than 1020 cm−3. We interpret the different superconducting behavior in carrier-doped p-type semiconductors SiC:Al, SiC:B, Si:B and C:B in terms of the different ionization energies of their acceptors. PMID:27878021

  10. Germanium-doped crystalline silicon: Effects of germanium doping on boron-related defects

    NASA Astrophysics Data System (ADS)

    Zhu, Xiaodong; Yu, Xuegong; Yang, Deren

    2014-09-01

    Recently it has been recognized that germanium (Ge) doping can be used for microelectronics and photovoltaic devices. This article reviews the recent results about the effects of Ge doping on boron-related defects in crystalline silicon. Behavior of Ge interacting with the acceptor dopants is also discussed therein. In addition, the article provides a comprehensive review on the effect of Ge doping to the formation of iron-boron pairs and boron-oxygen defects that is responsible for the light induced degradation (LID) of the carrier lifetime. The improvement silicon-based solar cells application from Ge doping is discussed as well, including the increment of cell efficiency and the power output of corresponding modules under sunlight illumination.

  11. Heteroatom-doped hydrogenated amorphous carbons, a-C:H:X. "Volatile" silicon, sulphur and nitrogen depletion, blue photoluminescence, diffuse interstellar bands and ferro-magnetic carbon grain connections

    NASA Astrophysics Data System (ADS)

    Jones, A. P.

    2013-07-01

    Context. Hydrogenated amorphous carbons, a-C:H, can incorporate a variety of heteroatoms, which can lead to interesting effects. Aims: We investigate the doping of interstellar a-C:H grains with, principally, Si, O, N and S atoms within the astrophysical context. Methods: A search of the literature on doped a-C:H reveals a number of interesting phenomena of relevance to astrophysics. Results: X dopants in a-C:H:X materials can affect the sp3/sp2 ratio (X = Si, O and N), lead to blue photoluminescence (undoped or X = N), induce ferromagnetic-like behaviour (X = N and S) or simply be incorporated (depleted) into the structure (X = Si, O, N and S). Si and N atoms could also incorporate into fullerenes, possibly forming colour-centres that could mimic diffuse interstellar bands. Conclusions: Doped a-C:H grains could explain several dust-related conundrums, such as: "volatile" Si in photo-dissociation regions, S and N depletion in molecular clouds, blue luminescence, some diffuse interstellar bands and ferromagnetism in carbonaceous grains.

  12. Low temperature coefficient of resistance and high gage factor in beryllium-doped silicon

    NASA Technical Reports Server (NTRS)

    Robertson, J. B.; Littlejohn, M. A.

    1974-01-01

    The gage factor and resistivity of p-type silicon doped with beryllium was studied as a function of temperature, crystal orientation, and beryllium doping concentration. It was shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gage factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, whereas the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.

  13. Transport properties for carbon chain sandwiched between heteroatom-doped carbon nanotubes with different doping sites

    SciTech Connect

    Liu, Wenjiang; Deng, Xiaoqing E-mail: caish@mail.gufe.edu.cn; Cai, Shaohong E-mail: caish@mail.gufe.edu.cn

    2016-07-15

    The First-principles calculation is used to investigate the transport properties of a carbon chain connected with N-and/or B-doped caped carbon nanotube acting as electrodes. The I-V curves of the carbon chain are affected by the N/B doping sites, and rectifying behavior can be obtained distinctly when the carbon chain is just connected onto two doping atom sites (N- chain-B), and a weak rectification occurs when N (B) doping at other sites. Interestingly, the spin-filtering effects exist in the junction when it is doped at other sites, undoped system, or N-terminal carbon chains. However, no this behavior is found in N-chain-B and B-chain-B systems. The analysis on the transmission spectra, PDOS, LDOS, spin density, and the electron transmission pathways give an insight into the observed results for the system.

  14. Transport properties for carbon chain sandwiched between heteroatom-doped carbon nanotubes with different doping sites

    NASA Astrophysics Data System (ADS)

    Liu, Wenjiang; Deng, Xiaoqing; Cai, Shaohong

    2016-07-01

    The First-principles calculation is used to investigate the transport properties of a carbon chain connected with N-and/or B-doped caped carbon nanotube acting as electrodes. The I-V curves of the carbon chain are affected by the N/B doping sites, and rectifying behavior can be obtained distinctly when the carbon chain is just connected onto two doping atom sites (N- chain-B), and a weak rectification occurs when N (B) doping at other sites. Interestingly, the spin-filtering effects exist in the junction when it is doped at other sites, undoped system, or N-terminal carbon chains. However, no this behavior is found in N-chain-B and B-chain-B systems. The analysis on the transmission spectra, PDOS, LDOS, spin density, and the electron transmission pathways give an insight into the observed results for the system.

  15. Laser doping and metallization of wide bandgap materials: silicon carbide, gallium nitride, and aluminum nitride

    NASA Astrophysics Data System (ADS)

    Salama, Islam Abdel Haleem

    A laser direct write and doping (LDWD) system is designed and utilized for direct metallization and selective area doping in different SiC polytypes, GaN and in dielectrics including AlN. Laser direct metallization in 4H- and 6H-SiC generates metal-like conductive phases that are produced as both rectifying and ohmic contacts without metal deposition. Nd:YAG (lambda = 532, 1064 nm) nanosecond pulsed laser irradiation in SiC induces carbon-rich conductive phases by thermal decomposition of SiC while UV excimer (lambda = 193 nm) laser irradiation produces a silicon-rich phase due to selective carbon photoablation. Linear transmission line method (TLM) pattern is directly fabricated in single crystals SiC by pulsed laser irradiation allowing characterization of the laser fabricated metal-like contacts. Activation of a self focusing effect at the frequency doubled Nd:YAG laser irradiation (lambda = 532 nm) allows to fabricate buried metal like contacts in SiC wafers while maintaining their device-ready surface condition. Gas immersion laser doping (GILD) and laser doping from a molten precursor are utilized to dope both GaN and SiC. Trimethylaluminum (TMAl) and nitrogen are the precursors used to produce p-type and n-type doped SiC; respectively. Nd:YAG and excimer laser nitrogen doping in SiC epilayer and single crystal substrates increases the dopant concentration by two orders of magnitude and produces both deep (500--600 nm) and shallow (50 nm) junctions, respectively. Laser assisted effusion/diffusion is introduced and utilized to dope Al in SiC wafers. Using this technique, a150 nm p-type doped junction is fabricated in semi-insulating 6H- and n-type doped 4H-SiC wafers. Laser-induced p-type doping of Mg in single crystal GaN is conducted using Bis-magnesium dihydrate [Mg(TMHD)2]. Mg concentration and penetration depth up to 10 20--1021 cm-3 and 5mum, respectively are achieved using various laser doping techniques. Laser direct writing and doping (LDWD) is a

  16. Suppression of oxidation enhanced boron diffusion in silicon by carbon implantation and characterization of MOSFETs with carbon implanted channels

    SciTech Connect

    Ban, I.; Oeztuerk, M.C.; Demirlioglu, E.

    1996-12-31

    Scaling of MOSFETs into the deep submicron regime requires shallow doping profiles with abrupt doping transitions in the MOSFET active region. In NMOS transistors with boron doped channels, oxidation enhanced diffusion is a key contributor to boron profile broadening. Starting from the arguments presented in several recent reports on the role of carbon in silicon as a sink for self-interstitials, we have explored the feasibility of using carbon in the MOSFET in the active region to retard boron diffusion during gate oxidation. MOSFETs with carbon and boron implanted channels have been fabricated. Boron diffusion, activation, and critical electrical parameters such as subthreshold swing, threshold voltage, and off-state leakage current have been evaluated as a function of the carbon dose. We have shown that carbon can effectively suppress boron diffusion during gate oxidation. However, at dose levels around 10{sup 14}cm{sup -2} carbon results in poor boron activation and degradation in MOSFET performance.

  17. Comment on ``Electron drift mobility in doped amorphous silicon''

    NASA Astrophysics Data System (ADS)

    Overhof, H.; Silver, M.

    1989-05-01

    Experimental drift-mobility data obtained by different methods in doped amorphous silicon are compared. It is shown that the presence of a long-range random potential will lead to a modification of the drift mobility in one experiment while the corresponding values in other experiments are virtually unaffected. It is shown that this effect accounts for the apparent discrepancy between the results of these experiments rather than the shift of the mobility edge upon doping which was recently proposed by Street, Kakalios, and Hack [Phys. Rev. B 38, 5603 (1988)] in order to understand their data.

  18. Realistic modeling of the electronic properties of doped amorphous silicon

    SciTech Connect

    Hack, M.; Street, R.A.

    1988-09-19

    In this letter we describe a fundamental approach to calculating the electronic properties of doped amorphous silicon which takes into account the thermal history of the material. Above the equilibrium temperature, the material is in a thermodynamically stable state, and this is derived by minimizing the free energy using a simple density of states model. The calculations are based on the defect compensation model of doping, introducing distributions of formation energies for neutral dangling bonds and fourfold dopant atoms while preserving charge neutrality. Our results are in good agreement with experimental data providing a realistic model for use in device simulation programs.

  19. Determination of surface recombination velocity in heavily doped silicon

    NASA Technical Reports Server (NTRS)

    Watanabe, M.; Gatos, H. C.; Actor, G.

    1976-01-01

    A method was developed and successfully tested for the determination of the effective surface recombination velocity of silicon layers doped by diffusion of phosphorus to a level of 10 to the 19th to 10 to the 21st per cu cm. The effective recombination velocity was obtained from the dependence of the electron-beam-induced current on the penetration of the electron beam of a scanning electron microscope. A special silicon diode was constructed which permitted the collection at the p-n junction of the carriers excited by the electron beam. This diode also permitted the study of the effects of surface preparation on the effective surface recombination velocity.

  20. Atomistic study of boron-doped silicon

    SciTech Connect

    Fearn, M.; Pettifor, D.G.; Jefferson, J.H.

    1996-12-31

    Atomistic simulations using both tight-binding and density-functional approaches have been performed to investigate boron-related defects in silicon. In agreement with experiment, the boron interstitial is shown to be a negative-U center in the sense that its neutral charge state, with an associated Jahn-Teller distortion off the ideal tetrahedral site, is never the ground state for any value of the chemical potential in the gap. The possible consequences for an electron-assisted migration of the interstitial are discussed. The authors also find the boron substitutional defect to be a next-nearest neighbor of a silicon vacancy in agreement with EPR spectra. A semi-empirical tight-binding model of the boron-silicon system is validated by direct comparison with the accurate density-functional results and is then used to perform molecular dynamics simulations of boron diffusion at high temperatures. The mobility of the interstitial is found to be strongly charge-state dependent. Termination of the boron interstitial migration path by recombination with a silicon vacancy is shown to be a very likely process with a number of configurations having no barrier to capture when the boron is a near-neighbor of the vacancy.

  1. Determination of the Structures of Silicon and Metal Doped Silicon Clusters

    NASA Astrophysics Data System (ADS)

    Lyon, Jonathan T.; Fielicke, Andre; Janssens, Ewald; Lievens, Peter

    2014-06-01

    Strongly bound clusters are often used as convenient models for bulk material. Silicon clusters are particularly interesting due to their importance in the electronics industry. We perform experimental IR multiple photon dissociation spectroscopy in the gas-phase, which makes use of a free electron laser, and compare the results with that predicted by density functional and MP2 theory calculations. Comparison of the vibrational spectra with that predicted by theoretical calculations for several structural isomers for each cluster size leads to accurate structural assignments. Here, we present our results for silicon clusters, and compare the structures with those of select transition metal doped SinM clusters. Of particular interest is the transition from exohedral to endoheral metal doped silicon clusters and how the transition size changes for different metal dopant atoms. Journal of Chemical Physics 2012, 136, 064301 e.g., ChemPhysChem 2014, 15, 328.

  2. Monolayer Contact Doping from a Silicon Oxide Source Substrate.

    PubMed

    Ye, Liang; González-Campo, Arántzazu; Kudernac, Tibor; Núñez, Rosario; de Jong, Michel; van der Wiel, Wilfred G; Huskens, Jurriaan

    2017-04-03

    Monolayer contact doping (MLCD) is a modification of the monolayer doping (MLD) technique that involves monolayer formation of a dopant-containing adsorbate on a source substrate. This source substrate is subsequently brought into contact with the target substrate, upon which the dopant is driven into the target substrate by thermal annealing. Here, we report a modified MLCD process, in which we replace the commonly used Si source substrate by a thermally oxidized substrate with a 100 nm thick silicon oxide layer, functionalized with a monolayer of a dopant-containing silane. The thermal oxide potentially provides a better capping effect and effectively prevents the dopants from diffusing back into the source substrate. The use of easily accessible and processable silane monolayers provides access to a general and modifiable process for the introduction of dopants on the source substrate. As a proof of concept, a boron-rich carboranyl-alkoxysilane was used here to construct the monolayer that delivers the dopant, to boost the doping level in the target substrate. X-ray photoelectron spectroscopy (XPS) showed a successful grafting of the dopant adsorbate onto the SiO2 surface. The achieved doping levels after thermal annealing were similar to the doping levels acessible by MLD as demonstrated by secondary ion mass spectrometry measurements. The method shows good prospects, e.g. for use in the doping of Si nanostructures.

  3. Identification of photoluminescence P line in indium doped silicon as In{sub Si}-Si{sub i} defect

    SciTech Connect

    Lauer, Kevin Möller, Christian; Schulze, Dirk; Ahrens, Carsten

    2015-01-15

    Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line) was found to depend on the position of a silicon interstitial rich region, the existence of a SiN{sub x}:H/SiO{sub x} stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetime in indium as well as boron doped silicon. We deduced a defect model consisting of one acceptor and one silicon interstitial atom denoted by A{sub Si}-Si{sub i}, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron doped silicon. Using this model we identified the defect responsible for the P line as In{sub Si}-Si{sub i} in neutral charge state and C{sub 2v} configuration.

  4. Measurement of minority carrier lifetime, mobility and diffusion length in heavily doped silicon

    NASA Technical Reports Server (NTRS)

    Swirhun, S. E.; Swanson, R. M.

    1986-01-01

    Carrier transport and recombination parameters in heavily doped silicon were examined. Data were presented for carrier diffusivity in both p- and n-type heavily doped silicon covering a broad range of doping concentrations from 10 to the 15th power to 10 to the 20th power atoms/cu cm. One of the highlights of the results showed that minority carrier diffusivities are higher by a factor of 2 in silicon compared to majority carrier diffusivities.

  5. Boron transient enhanced diffusion in heavily phosphorus doped silicon

    SciTech Connect

    Huang, M.B.; Myler, U.; Simpson, T.W.; Simpson, P.J.; Mitchell, I.V.

    1997-11-01

    A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The P-doped silicon was implanted with boron ions of 40 keV energy to a dose of 3 {times} 10{sup 14} cm{sup {minus}2}, and then annealed at temperatures ranging from 700--1,000 C in a N{sub 2} ambient for varying durations. As P doping concentration increased from 3 {times} 10{sup 19} to 1 {times} 10{sup 20} cm{sup {minus}3}, boron diffusivity and the immobile boron fraction decreased. The experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.

  6. Spark-source mass spectrometric assessment of silicon concentrations in silicon-doped gallium arsenide single crystals.

    PubMed

    Wiedemann, B; Meyer, J D; Jockel, D; Freyhardt, H C; Birkmann, B; Müller, G

    2001-07-01

    The spark-source mass spectrometric assessment of silicon concentrations in silicon-doped vertical-gradient-freeze gallium arsenide is presented. The silicon concentrations determined are compared with the charge-carrier densities measured by means of the Hall effect with van der Pauw symmetry along the axis of a single crystal.

  7. Germanium-doped crystalline silicon: A new substrate for photovoltaic application

    NASA Astrophysics Data System (ADS)

    Yang, Deren; Wang, Peng; Yu, Xuegong; Que, Duanlin

    2013-01-01

    Germanium (Ge)-doped crystalline silicon has attracted much attention in recent years, due to its promising properties for meeting the increasing requirements for photovoltaic applications. This paper has reviewed our recent results on Ge-doped crystalline silicon and corresponding solar cells. It includes that Ge doping improves the fracture strength of crystalline silicon, and suppresses the Boron-Oxygen (B-O) defects responsible for the light induced degradation (LID) of carrier lifetime. Ge doping in crystalline silicon will not only benefit for reduction of breakage during the cell fabrication processes, but also improve the solar cell efficiency and the power output of corresponding modules under sunlight illumination.

  8. Magnetic and electronic transport properties of Mn-doped silicon

    NASA Astrophysics Data System (ADS)

    Ma, S. B.; Sun, Y. P.; Zhao, B. C.; Tong, P.; Zhu, X. B.; Song, W. H.

    2006-10-01

    Polycrystalline Si 1- xMn x ( x=0.005, 0.01, and 0.015) samples were prepared by the arc-melting method. Powder x-ray diffraction analysis demonstrates that the light Mn doping does not change the crystalline structure of silicon. Magnetic studies reveal that the ferromagnetism can be developed in all Mn-doped samples and the Curie temperature (TC) increases with increasing Mn doping content x. The effective magnetic moments are 4.15, 4.05μB/Mn for the samples with x=0.01 and 0.015, respectively. The undoped sample shows semiconducting behavior in the whole studied temperature range, whereas a metal-insulator transition can be observed near TC for all doped samples. The thermally activated conducting mechanism dominates the low temperature transport properties of the doped samples. The activation energy obtained from the fitting decreases monotonously with increasing x. In addition, the anomalous Hall effect below TC was observed from the magnetic field dependence of the Hall resistivity curves.

  9. Microstructure analysis of silicon nanocrystals formed from silicon rich oxide with high excess silicon: Annealing and doping effects

    NASA Astrophysics Data System (ADS)

    Nomoto, K.; Yang, T. C. J.; Ceguerra, A. V.; Zhang, T.; Lin, Z.; Breen, A.; Wu, L.; Puthen-Veettil, B.; Jia, X.; Conibeer, G.; Perez-Wurfl, I.; Ringer, S. P.

    2017-07-01

    Thin films consisting of silicon nanocrystals fabricated by high silicon content in silicon rich oxide show unique properties of decreasing resistivity and increasing light absorption while maintaining quantum confinement effects. With that said, the effect of the annealing temperature and doping element on the microscopic structure of silicon nanocrystals (Si NCs) and the film are still under research. In this study, individual intrinsic, boron-, and phosphorus-doped films are annealed at various temperatures, and their structural properties are analyzed via atom probe tomography together with glancing incidence x-ray diffraction, Raman spectroscopy (Raman), transmission electron microscopy (TEM), and energy filtered TEM. In addition, photoluminescence (PL) is performed and linked with their microstructural properties. The Si NC growth is confirmed at annealing temperatures of 1000 °C and 1100 °C. The microstructure of the Si NCs in the whole film is dramatically changed by increasing the annealing temperature from 1000 °C to 1100 °C. In addition, doping changes the arrangement of the Si NCs by assisting their penetration across the SiO2 barrier layers. This study helps to understand the relationship between the microscopic and macroscopic properties of the Si NC film, showing that the size and distribution of the Si NCs are correlated with the obtained PL profiles.

  10. Characteristic Study of Boron Doped Carbon Nanowalls Films Deposited by Microwave Plasma Enhanced Chemical Vapor Deposition.

    PubMed

    Lu, Chunyuan; Dong, Qi; Tulugan, Kelimu; Park, Yeong Min; More, Mahendra A; Kim, Jaeho; Kim, Tae Gyu

    2016-02-01

    In this research, catalyst-free vertically aligned boron doped carbon nanowalls films were fabricated on silicon (100) substrates by MPECVD using feeding gases CH4, H2 and B2H6 (diluted with H2 to 5% vol) as precursors. The substrates were pre-seeded with nanodiamond colloid. The fabricated CNWs films were characterized by Scanning Electron Microscopy (SEM) and Raman Spectroscopy. The data obtained from SEM confirms that the CNWs films have different density and wall thickness. From Raman spectrum, a G peak around 1588 cm(-1) and a D band peak at 1362 cm(-1) were observed, which indicates a successful fabrication of CNWs films. The EDX spectrum of boron doped CNWs film shows the existence of boron and carbon. Furthermore, field emission properties of boron doped carbon nanowalls films were measured and field enhancement factor was calculated using Fowler-Nordheim plot. The result indicates that boron doped CNWs films could be potential electron emitting materials.

  11. Highly n -doped silicon: Deactivating defects of donors

    NASA Astrophysics Data System (ADS)

    Mueller, D. Christoph; Fichtner, Wolfgang

    2004-12-01

    We report insight into the deactivation mechanisms of group V donors in heavily doped silicon. Based on our ab initio calculations, we suggest a three step model for the donor deactivation. In highly n -type Si grown at low temperatures, in the absence of excess native point defects, the intrinsic limit to ne seems to rise in part by means of donor deactivating distortions of the silicon lattice in the proximity of two or more donor atoms that share close sites. Also, donor dimers play an important part in the deactivation at high doping concentrations. While the dimers constitute a stable or metastable inactive donor configuration, the lattice distortions lower the donor levels gradually below the impurity band in degenerate silicon. On the other hand, we find that, in general, none of the earlier proposed deactivating donor pair defects is stable at any position of the Fermi level. The lattice distortions may be viewed as a precursor to Frenkel pair generation and donor-vacancy clustering process (step 2) that account for deactivation at elevated temperature and longer annealing times. Ultimately, and most prominently in the case of the large Sb atoms, precipitation of the donor atoms may set in as the last step of the deactivation process chain.

  12. Synthesis and Doping of Silicon Nanocrystals for Versatile Nanocrystal Inks

    NASA Astrophysics Data System (ADS)

    Kramer, Nicolaas Johannes

    atmospheric pressures necessitates high plasma densities to reach temperatures required for crystallization of nanoparticles. Using experimentally determined plasma properties from the literature, the model estimates the nanoparticle temperature that is achieved during synthesis at atmospheric pressures. It was found that temperatures well above those required for crystallization can be achieved. Now that the synthesis of nanocrystals is understood, the second half of this thesis will focus on doping of the nanocrystals. The doping of semiconductor nanocrystals, which is vital for the optimization of nanocrystal-based devices, remains a challenge. Gas phase plasma approaches have been very successful in incorporating dopant atoms into nanocrystals by simply adding a dopant precursor during synthesis. However, little is known about the electronic activation of these dopants. This was investigated with field-effect transistor measurements using doped silicon nanocrystal films. It was found that, analogous to bulk silicon, boron and phosphorous electronically dope silicon nanocrystals. However, the dopant activation efficiency remains low as a result of self-purification of the dopants to the nanocrystal surface. Next the plasmonic properties of heavily doped silicon nanocrystals was explored. While the synthesis method was identical, the plasmonic behavior of phosphorus-doped and boron-doped nanocrystals was found the be significantly different. Phosphorus-doped nanocrystals exhibit a plasmon resonance immediately after synthesis, while boron-doped nanocrystals require a post-synthesis annealing or oxidation treatment. This is a result of the difference in dopant location. Phosphorus is more likely to be incorporated into the core of the nanocrystal, while the majority of boron is placed on the surface of the nanocrystal. The oxidized boron-doped particles exhibit stable plasmonic properties, and therefore this allows for the production of air-stable silicon-based plasmonic

  13. Effects of high doping levels on silicon solar cell performance

    NASA Technical Reports Server (NTRS)

    Godlewski, M. P.; Brandhorst, H. W., Jr.; Baraona, C. R.

    1975-01-01

    Open-circuit voltages measured in silicon solar cells made from 0.01 ohm-cm material are 150 mV lower than voltages calculated from simple diffusion theory and cannot be explained by poor diffusion lengths or surface leakage currents. An analytical study was made to determine whether high doping effects, which increase the intrinsic carrier concentration, could account for the low observed voltages and to determine the limits on voltage and efficiency imposed by high doping effects. The results indicate that the observed variation of voltage with base resistivity is predicted by these effects. A maximum efficiency of 19% (AMO) and a voltage of 0.7 volts were calculated for 0.1 ohm-cm cells assuming an optimum diffused layer impurity profile.

  14. Optical absorption and emission of nitrogen-doped silicon nanocrystals.

    PubMed

    Pi, Xiaodong; Chen, Xiaobo; Ma, Yeshi; Yang, Deren

    2011-11-01

    Silicon nanocrystals (Si NCs) may be both unintentionally and intentionally doped with nitrogen (N) during their synthesis and processing. Since the importance of Si NCs largely originates from their remarkable optical properties, it is critical to understand the effect of N doping on the optical behavior of Si NCs. On the basis of theoretical calculations, we show that the doping of Si NCs with N most likely leads to the formation of paired interstitial N at the NC surface, which causes both the optical absorption and emission of Si NCs to redshift. But these redshifts are smaller than those induced by doubly bonded O at the NC surface. It is found that high radiative recombination rates can be reliably obtained for Si NCs with paired interstitial N at the NC surface. The current results not only help to understand the optical behavior of Si NCs synthesized and processed in N-containing environments, but also inspire intentional N doping as an additional means to control the optical properties of Si NCs.

  15. Low Temperature Phosphorus Doping in Silicon Using Catalytically Generated Radicals

    NASA Astrophysics Data System (ADS)

    Hayakawa, Taro; Nakashima, Yuki; Miyamoto, Motoharu; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

    2011-12-01

    In this paper, we report the possibility of forming a phosphorus (P)-doped layer on silicon (Si) at low temperatures. Using the radicals catalytically generated from phosphine (PH3), a thin n-type layer is formed on a crystalline Si (c-Si) wafer at 150 °C. The secondary ion mass spectrometry (SIMS) profile of doped P atoms indicates that P atoms exist in the vicinity of the c-Si surface, and the depth at which P atom concentration decreases to 1/10 of the surface concentration is less than 12 nm for 300 s of radical treatment. The sheet carrier density on radical-treated c-Si wafers measured using the Hall effect shows that P atoms act as donors without annealing. The sheet carrier concentration of the P-doped layer is increased by adding hydrogen (H2) to the PH3 source gas. The effect of adding H2 to PH3 suggests that the surface reaction of atomic H plays an important role in the doping process.

  16. Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers

    NASA Astrophysics Data System (ADS)

    Guan, Bin; Siampour, Hamidreza; Fan, Zhao; Wang, Shun; Kong, Xiang Yang; Mesli, Abdelmadjid; Zhang, Jian; Dan, Yaping

    2015-07-01

    This Report presents a nitrogen-doping method by chemically forming self-assembled monolayers on silicon. Van der Pauw technique, secondary-ion mass spectroscopy and low temperature Hall effect measurements are employed to characterize the nitrogen dopants. The experimental data show that the diffusion coefficient of nitrogen dopants is 3.66 × 10-15 cm2 s-1, 2 orders magnitude lower than that of phosphorus dopants in silicon. It is found that less than 1% of nitrogen dopants exhibit electrical activity. The analysis of Hall effect data at low temperatures indicates that the donor energy level for nitrogen dopants is located at 189 meV below the conduction band, consistent with the literature value.

  17. Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers.

    PubMed

    Guan, Bin; Siampour, Hamidreza; Fan, Zhao; Wang, Shun; Kong, Xiang Yang; Mesli, Abdelmadjid; Zhang, Jian; Dan, Yaping

    2015-07-31

    This Report presents a nitrogen-doping method by chemically forming self-assembled monolayers on silicon. Van der Pauw technique, secondary-ion mass spectroscopy and low temperature Hall effect measurements are employed to characterize the nitrogen dopants. The experimental data show that the diffusion coefficient of nitrogen dopants is 3.66 × 10(-15) cm(2) s(-1), 2 orders magnitude lower than that of phosphorus dopants in silicon. It is found that less than 1% of nitrogen dopants exhibit electrical activity. The analysis of Hall effect data at low temperatures indicates that the donor energy level for nitrogen dopants is located at 189 meV below the conduction band, consistent with the literature value.

  18. Hydrogen transport in phosphorus and boron doped polycrystalline silicon

    SciTech Connect

    Nickel, N.H.; Kaiser, I.

    1999-07-01

    Hydrogen diffusion in phosphorus and boron doped polycrystalline silicon was investigated by deuterium diffusion experiments. The presence of dopants enhances hydrogen diffusion. The effective diffusion coefficient D{sub eff} is thermally activated and the activation energy varies between 0.1 and 0.4 eV. This is accompanied by a variation of the diffusion prefactor by 12 orders of magnitude. Using the theoretical diffusion prefactor the actual energy {bar E}{sub A} was calculated from D{sub eff}. {bar E}{sub A} also depends strongly on the Fermi energy and exhibits a similar dependence as the formation energies of H{sup +} and H{sup {minus}} in single crystal silicon.

  19. Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers

    PubMed Central

    Guan, Bin; Siampour, Hamidreza; Fan, Zhao; Wang, Shun; Kong, Xiang Yang; Mesli, Abdelmadjid; Zhang, Jian; Dan, Yaping

    2015-01-01

    This Report presents a nitrogen-doping method by chemically forming self-assembled monolayers on silicon. Van der Pauw technique, secondary-ion mass spectroscopy and low temperature Hall effect measurements are employed to characterize the nitrogen dopants. The experimental data show that the diffusion coefficient of nitrogen dopants is 3.66 × 10−15 cm2 s−1, 2 orders magnitude lower than that of phosphorus dopants in silicon. It is found that less than 1% of nitrogen dopants exhibit electrical activity. The analysis of Hall effect data at low temperatures indicates that the donor energy level for nitrogen dopants is located at 189 meV below the conduction band, consistent with the literature value. PMID:26227342

  20. A DLTS study of hydrogen doped czochralski-grown silicon

    NASA Astrophysics Data System (ADS)

    Jelinek, M.; Laven, J. G.; Kirnstoetter, S.; Schustereder, W.; Schulze, H.-J.; Rommel, M.; Frey, L.

    2015-12-01

    In this study we examine proton implanted and subsequently annealed commercially available CZ wafers with the DLTS method. Depth-resolved spreading resistance measurements are shown, indicating an additional peak in the induced doping profile, not seen in the impurity-lean FZ reference samples. The additional peak lies about 10-15 μm deeper than the main peak near the projected range of the protons. A DLTS characterization in the depth of the additional peak indicates that it is most likely not caused by classical hydrogen-related donors known also from FZ silicon but by an additional donor complex whose formation is assisted by the presence of silicon self-interstitials.

  1. Oxygen and carbon impurities and related defects in silicon

    NASA Technical Reports Server (NTRS)

    Pearce, C. W.

    1985-01-01

    Oxygen and carbon are the predominant impurities in Czochralski-grown silicon. The incorporation of oxygen and carbon during crystal growth is reviewed and device effects are discussed. Methods for controlling oxygen and carbon incorporation during crystal growth are discussed and results supporting a segregation coefficient of k=0.5 for oxygen are presented. The nucleation and precipitation behavior of oxygen is complex. Temperature and doping level effects which add insight into the role of point defects in the nucleation process are highlighted. In general, precipitation is found to be retarded in N+ and P+ silicon. The types and quantities of defects resulting from the oxygen precipitates is of interest as they are technologically useful in the process called intrinsic gettering. A comparison is made between the available defect sites and the quantities of metallic impurities present in a typical wafer which need to be gettered. Finally, a discussion of the denuded-zone, intrinsic-gettered (DZ-IG) structure on device properties is presented.

  2. Delta-Doping at Wafer Level for High Throughput, High Yield Fabrication of Silicon Imaging Arrays

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E. (Inventor); Nikzad, Shoulch (Inventor); Jones, Todd J. (Inventor); Greer, Frank (Inventor); Carver, Alexander G. (Inventor)

    2014-01-01

    Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3 + NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.

  3. Phase transitions in ferroelectric silicon doped hafnium oxide

    NASA Astrophysics Data System (ADS)

    Böscke, T. S.; Teichert, St.; Bräuhaus, D.; Müller, J.; Schröder, U.; Böttger, U.; Mikolajick, T.

    2011-09-01

    We investigated phase transitions in ferroelectric silicon doped hafnium oxide (FE-Si:HfO2) by temperature dependent polarization and x-ray diffraction measurements. If heated under mechanical confinement, the orthorhombic ferroelectric phase reversibly transforms into a phase with antiferroelectric behavior. Without confinement, a transformation into a monoclinic/tetragonal phase mixture is observed during cooling. These results suggest the existence of a common higher symmetry parent phase to the orthorhombic and monoclinic phases, while transformation between these phases appears to be inhibited by an energy barrier.

  4. Chemical mechanical polishing of boron-doped polycrystalline silicon

    NASA Astrophysics Data System (ADS)

    Pirayesh, Hamidreza; Cadien, Kenneth

    2014-03-01

    Chemical mechanical polishing (CMP) is a technique which helps to print a smaller depth of focus and smoother surface in micro fabrication industry. In this project, boron doped polysilicon is used as a fill material for Through Silicon Vias (TSV) creating a 3D package. It is shown that the presence of boron as dopant suppresses the polysilicon polish rate. To increase the polish rate, understanding the mechanism of polish rate retardation is essential. We believe that the electrical effects play the major role in this phenomenon and by reducing this effect we are able to increase the polish rate.

  5. Effects of high doping levels silicon solar cell performance

    NASA Technical Reports Server (NTRS)

    Godlewski, M. P.; Brandhorst, H. W., Jr.; Baraona, C. R.

    1975-01-01

    The significance of the heavy doping effects (HDE) on the open-circuit voltage of silicon solar cells is assessed. Voltage calculations based on diffusion theory are modified to include the first order features of the HDE. Comparisions of the open-circuit voltage measured for cells of various base resistivities are made with those calculated using the diffusion model with and without the HDE. Results indicate that the observed variation of voltage with base resistivity is predicted by these effects. A maximum efficiency of 19% (AM0) and a voltage of 0.7 volts are calculated for 0.1 omega-cm cells assuming an optimum diffused layer impurity profile.

  6. The observation of damage regions produced by neutron irradiation in lithium-doped silicon solar cells.

    NASA Technical Reports Server (NTRS)

    Ghosh, S.; Sargent, G. A.

    1972-01-01

    Study regions of lattice disorder produced in lithium-doped float-zone melted n/p-type silicon solar cells by irradiation with monoenergetic neutrons at doses between 10 to the 10th and 10 to the 13th per cu cm. The defect regions were revealed by chemically etching the surface of the solar cells and by observing carbon replicas in an electron microscope. It was found that the defect density increased with increasing irradiation dose and increased lithium content, whereas the average defect diameter was found to decrease. From thermal annealing experiments it was found that in the lithium-doped material the defect structure was stable at temperatures between 300 and 1200 K. This was found to be in contrast to the undoped material where at the lowest doses considerable annealing was observed to occur. These results are discussed in terms of the theoretical predictions and models of defect clusters proposed by Gossick (1959) and Crawford and Cleland (1959).

  7. The observation of damage regions produced by neutron irradiation in lithium-doped silicon solar cells.

    NASA Technical Reports Server (NTRS)

    Ghosh, S.; Sargent, G. A.

    1972-01-01

    Study regions of lattice disorder produced in lithium-doped float-zone melted n/p-type silicon solar cells by irradiation with monoenergetic neutrons at doses between 10 to the 10th and 10 to the 13th per cu cm. The defect regions were revealed by chemically etching the surface of the solar cells and by observing carbon replicas in an electron microscope. It was found that the defect density increased with increasing irradiation dose and increased lithium content, whereas the average defect diameter was found to decrease. From thermal annealing experiments it was found that in the lithium-doped material the defect structure was stable at temperatures between 300 and 1200 K. This was found to be in contrast to the undoped material where at the lowest doses considerable annealing was observed to occur. These results are discussed in terms of the theoretical predictions and models of defect clusters proposed by Gossick (1959) and Crawford and Cleland (1959).

  8. Characterisation of active dopants in boron-doped self-assembled silicon nanostructures

    NASA Astrophysics Data System (ADS)

    Puthen Veettil, Binesh; Zhang, Tian; Chin, Robert Lee; Jia, Xuguang; Nomoto, Keita; Yang, Terry Chien-Jen; Lin, Ziyun; Wu, Lingfeng; Rexiati, Reyifate; Gutsch, Sebastian; Conibeer, Gavin; Perez-Würfl, Ivan

    2016-10-01

    Doping of silicon nanocrystals has become an important topic due to its potential to enable the fabrication of environmentally friendly and cost-effective optoelectronic and photovoltaic devices. However, doping of silicon nanocrystals has been proven difficult and most of the structural and electronic properties are still not well understood. In this work, the intrinsic and boron-doped self-assembled silicon nanocrystals were prepared and mainly characterised by the transient current method to study the behaviour of charge carriers in these materials. Our experiments quantified the amount of electrically active boron dopants that contributed to charge transport. From this, the boron doping efficiency in the nanocrystal superlattice was estimated.

  9. Ion-implantation and analysis for doped silicon slot waveguides

    NASA Astrophysics Data System (ADS)

    Deam, L.; Stavrias, N.; Lee, K. K.; McCallum, J. C.

    2012-10-01

    We have utilised ion implantation to fabricate silicon nanocrystal sensitised erbium-doped slot waveguide structures in a Si/SiO2/Si layered configuration and photoluminescence (PL) and Rutherford backscattering spectrometry (RBS) to analyse these structures. Slot waveguide structures in which light is confined to a nanometre-scale low-index region between two high-index regions potentially offer significant advantages for realisation of electrically-pumped Si devices with optical gain and possibly quantum optical devices. We are currently investigating an alternative pathway in which high quality thermal oxides are grown on silicon and ion implantation is used to introduce the Er and Si-ncs into the SiO2 layer. This approach provides considerable control over the Er and Si-nc concentrations and depth profiles which is important for exploring the available parameter space and developing optimised structures. RBS is well-suited to compositional analysis of these layered structures. To improve the depth sensitivity we have used a 1 MeV α beam and results indicate that a layered silicon-Er:SiO2/silicon structure has been fabricated as desired. In this paper structural results will be compared to Er photoluminescence profiles for samples processed under a range of conditions.

  10. Doping limits of grown in situ doped silicon nanowires using phosphine.

    PubMed

    Schmid, Heinz; Björk, Mikael T; Knoch, Joachim; Karg, Siegfried; Riel, Heike; Riess, Walter

    2009-01-01

    Structural characterization and electrical measurements of silicon nanowires (SiNWs) synthesized by Au catalyzed vapor-liquid-solid growth using silane and axially doped in situ with phosphine are reported. We demonstrate that highly n-doped SiNWs can be grown without structural defects and high selectivity and find that addition of the dopant reduces the growth rate by less than 8% irrespective of the radius. This indicates that also the dopant incorporation is radius-independent. On the basis of electrical measurements on individual wires, contact resistivities as low as 1.2 x 10(-7) omega cm(-2) were extracted. Resistivity measurements reveal a reproducible donor incorporation of up to 1.5 x 1020 cm-3 using a gas phase ratios of Si/P = 1.5 x 10(-2). Higher dopant gas concentrations did not lead to an increase of the doping concentration beyond 1.5 x10(20) cm(-3).

  11. Photon effect on electron-irradiated boron-doped silicon solar cell

    NASA Astrophysics Data System (ADS)

    Roux, M.; Bernard, J.; Reulet, R.; Crabb, R. L.

    1984-07-01

    The correlation between current-voltage-characteristic measurements and deep-level transient-spectroscopy data on boron-doped silicon solar cells irradiated at room temperature by a 1-MeV electron beam, followed or not by an illumination, is presented in this study. From such correlation it is possible to conclude that the additional degradation induced by light is due to the appearance of a defect in oxygen-lean silicon, which should be associated with the vacancy-oxygen-carbon complex. A model based upon the dissociation (enhanced by capture of photogenerated carriers) of the interstitial-boron/interstitial-oxygen complex accounts for these observations: it verifies that the 'photon effect' exists in oxygen-lean cells and is absent in high-oxygen-concentration cells.

  12. Carbon/Silicon Heterojunction Solar Cells: State of the Art and Prospects.

    PubMed

    Li, Xinming; Lv, Zheng; Zhu, Hongwei

    2015-11-01

    In the last few decades, advances and breakthroughs of carbon materials have been witnessed in both scientific fundamentals and potential applications. The combination of carbon materials with traditional silicon semiconductors to fabricate solar cells has been a promising field of carbon science. The power conversion efficiency has reached 15-17% with an astonishing speed, and the diversity of systems stimulates interest in further research. Here, the historical development and state-of-the-art carbon/silicon heterojunction solar cells are covered. Firstly, the basic concept and mechanism of carbon/silicon solar cells are introduced with a specific focus on solar cells assembled with carbon nanotubes and graphene due to their unique structures and properties. Then, several key technologies with special electrical and optical designs are introduced to improve the cell performance, such as chemical doping, interface passivation, anti-reflection coatings, and textured surfaces. Finally, potential pathways and opportunities based on the carbon/silicon heterojunction are envisaged. The aspects discussed here may enable researchers to better understand the photovoltaic effect of carbon/silicon heterojunctions and to optimize the design of graphene-based photodevices for a wide range of applications.

  13. Thermal donors and radiation-induced defect states in transmutation doped gamma-irradiated silicon

    NASA Astrophysics Data System (ADS)

    Budzulyak, S. I.; Dotsenko, Yu. P.; Ermakov, V. M.; Kolomoets, V. V.; Venger, E. F.

    2001-12-01

    Transport phenomena are studied in uniaxially strained transmutation doped γ-irradiated n-Si(P) crystals. It is shown that thermal annealing of the transmutation doped Si results in the generation of different types of thermodonors. Tensoresistivity mechanisms in highly strained transmutation doped silicon are identified as well.

  14. Converting a carbon preform object to a silicon carbide object

    NASA Technical Reports Server (NTRS)

    Levin, Harry (Inventor)

    1990-01-01

    A process for converting in depth a carbon or graphite preform object to a silicon carbide object, silicon carbide/silicon object, silicon carbide/carbon-core object, or a silicon carbide/silicon/carbon-core object, by contacting it with silicon liquid and vapor over various lengths of contact time in a reaction chamber. In the process, a stream comprised of a silicon-containing precursor material in gaseous phase below the decomposition temperature of said gas and a coreactant, carrier or diluent gas such as hydrogen is passed through a hole within a high emissivity, thin, insulating septum into the reaction chamber above the melting point of silicon. The thin septum has one face below the decomposition temperature of the gas and an opposite face exposed to the reaction chamber. Thus, the precursor gas is decomposed directly to silicon in the reaction chamber. Any stream of decomposition gas and any unreacted precursor gas from the reaction chamber is removed. A carbon or graphite preform object placed in the reaction chamber is contacted with the silicon. The carbon or graphite preform object is recovered from the reactor chamber after it has been converted to a desired silicon carbide, silicon and carbon composition.

  15. Multicolor Nitrogen-Doped Carbon Dots for Live Cell Imaging.

    PubMed

    Du, Fengyi; Li, Jianan; Hua, Ye; Zhang, Miaomiao; Zhou, Zhou; Yuan, Jing; Wang, Jun; Peng, Wanxin; Zhang, Li; Xia, Sheng; Wang, Dongqing; Yang, Shiming; Xu, Wenrong; Gong, Aihua; Shao, Qixiang

    2015-05-01

    Doping carbon dots with nitrogen atoms considerably enhances their fluorescence properties. However, the mechanism by which the carbon dots are doped is not fully understood. We developed a facile bottom-up hydrothermal carbonization (HTC) process that uses glucose and glycine as precursors for the synthesis of photoluminescent nitrogen-doped carbon dots. The as-prepared nitrogen-doped carbon dots were mono-dispersed spherical particles with a diameter of -2.8 nm. The doped nitrogen atoms assumed pyridinic type and pyrrolic type configurations to participate in the nanocrystal structure of the carbon dots. It appeared that the nitrogen doping introduces a new internal structure. The aqueous solution of nitrogen-doped carbon dots showed excitation wavelength-dependent multicolor photoluminescence. Further, these nitrogen-doped carbon dots readily entered the cytoplasm of A549 cancer cells and showed no significant cytotoxicity. The internalized nitrogen-doped carbon dots were localized to the cell membrane and cytoplasm, particularly around the nucleus. Further, the as-prepared, biocompatible, nitrogen-doped carbon dots demonstrated the potential to be used as fluorescent probes for multicolor live cell labeling, tracking, and imaging.

  16. Hybrid integration of carbon nanotubes into silicon slot photonic structures

    NASA Astrophysics Data System (ADS)

    Durán Valdeiglesias, E.; Zhang, W.; Hoang, H. C.; Alonso-Ramos, C.; Noury, A.; Serna, S.; Le Roux, X.; Cassan, E.; Izard, N.; Sarti, F.; Torrini, U.; Balestrieri, M.; Keita, A.-S.; Yang, H.; Bezugly, V.; Vinattieri, A.; Cuniberti, G.; Filoramo, A.; Gurioli, M.; Vivien, L.

    2016-03-01

    Silicon photonics, due to its compatibility with the CMOS platform and unprecedented integration capability, has become the preferred solution for the implementation of next generation optical interconnects. However, current Si photonics require on-chip integration of several materials, including III-V for lasing, doped silicon for modulation and Ge for detection. The very different requirements of these materials result in complex fabrication processes that offset the cost-effectiveness of the Si photonics approach. We are developing an alternative route towards the integration of optoelectronic devices in Si photonic, relying on the use of single wall carbon nanotubes (SWNTs). SWNTs can be considered as a Si compatible material able to emit, modulate and detect near-infrared light. Hence, they hold a unique potential to implement all active devices in the Si photonics platform. In addition, solution processed SWNTs can be integrated on Si using spin-coating techniques, obviating the need of complex epitaxial growth or chip bonding approaches. Here, we report on our recent progress in the coupling of SWNTs light emission into optical resonators implemented on the silicon-on-insulator (SOI) platform.

  17. Near-infrared free carrier absorption in heavily doped silicon

    SciTech Connect

    Baker-Finch, Simeon C.; McIntosh, Keith R.; Yan, Di; Fong, Kean Chern; Kho, Teng C.

    2014-08-14

    Free carrier absorption in heavily doped silicon can have a significant impact on devices operating in the infrared. In the near infrared, the free carrier absorption process can compete with band to band absorption processes, thereby reducing the number of available photons to optoelectronic devices such as solar cells. In this work, we fabricate 18 heavily doped regions by phosphorus and boron diffusion into planar polished silicon wafers; the simple sample structure facilitates accurate and precise measurement of the free carrier absorptance. We measure and model reflectance and transmittance dispersion to arrive at a parameterisation for the free carrier absorption coefficient that applies in the wavelength range between 1000 and 1500 nm, and the range of dopant densities between ∼10{sup 18} and 3 × 10{sup 20} cm{sup −3}. Our measurements indicate that previously published parameterisations underestimate the free carrier absorptance in phosphorus diffusions. On the other hand, published parameterisations are generally consistent with our measurements and model for boron diffusions. Our new model is the first to be assigned uncertainty and is well-suited to routine device analysis.

  18. Properties of boron-doped thin films of polycrystalline silicon

    SciTech Connect

    Merabet, Souad

    2013-12-16

    The properties of polycrystalline-silicon films deposited by low pressure chemical vapor deposition and doped heavily in situ boron-doped with concentration level of around 2×10{sup 20}cm{sup −3} has been studied. Their properties are analyzed using electrical and structural characterization means by four points probe resistivity measurements and X-ray diffraction spectra. The thermal-oxidation process are performed on sub-micron layers of 200nm/c-Si and 200nm/SiO{sub 2} deposited at temperatures T{sub d} ranged between 520°C and 605°C and thermally-oxidized in dry oxygen ambient at 945°C. Compared to the as-grown resistivity with silicon wafers is known to be in the following sequence <ρ{sub 200nm/c−Si}> < <ρ{sub 200nm/SiO2}> and <ρ{sub 520}> < <ρ{sub 605}>. The measure X-ray spectra is shown, that the Bragg peaks are marked according to the crystal orientation in the film deposited on bare substrates (poly/c-Si), for the second series of films deposited on bare oxidized substrates (poly/SiO{sub 2}) are clearly different.

  19. Crystallization and doping of amorphous silicon on low temperature plastic

    DOEpatents

    Kaschmitter, James L.; Truher, Joel B.; Weiner, Kurt H.; Sigmon, Thomas W.

    1994-01-01

    A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900.degree. C.), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180.degree. C. for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180.degree. C.) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide.

  20. Crystallization and doping of amorphous silicon on low temperature plastic

    DOEpatents

    Kaschmitter, J.L.; Truher, J.B.; Weiner, K.H.; Sigmon, T.W.

    1994-09-13

    A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate is disclosed. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900 C), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180 C for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180 C) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide. 5 figs.

  1. Passivation of textured crystalline silicon surfaces by catalytic CVD silicon nitride films and catalytic phosphorus doping

    NASA Astrophysics Data System (ADS)

    Ohdaira, Keisuke; Cham, Trinh Thi; Matsumura, Hideki

    2017-10-01

    Silicon nitride (SiN x ) films formed by catalytic chemical vapor deposition (Cat-CVD) and phosphorus (P)-doped layers formed by catalytic impurity doping (Cat-doping) are applied for the passivation of pyramid-shaped textured crystalline Si (c-Si) surfaces formed by anisotropic etching in alkaline solution. Lower surface recombination velocities (SRVs) tend to be obtained when smaller pyramids are formed on c-Si surfaces. P Cat-doping is effective for reducing the SRV of textured c-Si surfaces as in the case of flat c-Si surfaces. We realize SRVs of textured c-Si surfaces of ∼8.0 and ∼6.7 cm/s for only SiN x passivation and for the combination of SiN x and P Cat-doping, respectively. These structures also have high optical transparency and low Auger recombination loss, and are of great worth in application for the surface passivation of interdigitated back-contact c-Si solar cells.

  2. Silicon/Carbon Nanotube Photocathode for Splitting Water

    NASA Technical Reports Server (NTRS)

    Amashukeli, Xenia; Manohara, Harish; Greer, Harold F.; Hall, Lee J.; Gray, Harry B.; Subbert, Bryan

    2013-01-01

    A proof-of-concept device is being developed for hydrogen gas production based on water-splitting redox reactions facilitated by cobalt tetra-aryl porphyrins (Co[TArP]) catalysts stacked on carbon nanotubes (CNTs) that are grown on n-doped silicon substrates. The operational principle of the proposed device is based on conversion of photoelectron energy from sunlight into chemical energy, which at a later point, can be turned into electrical and mechanical power. The proposed device will consist of a degenerately n-doped silicon substrate with Si posts covering the surface of a 4-in. (approximately equal to 10cm) wafer. The substrate will absorb radiation, and electrons will move radially out of Si to CNT. Si posts are designed such that the diameters are small enough to allow considerable numbers of electrons to transport across to the CNT layer. CNTs will be grown on top of Si using conformal catalyst (Fe/Ni) deposition over a thin alumina barrier layer. Both metallic and semiconducting CNT will be used in this investigation, thus allowing for additional charge generation from CNT in the IR region. Si post top surfaces will be masked from catalyst deposition so as to prevent CNT growth on the top surface. A typical unit cell will then consist of a Si post covered with CNT, providing enhanced surface area for the catalyst. The device will then be dipped into a solution of Co[TArP] to enable coating of CNT with Co(P). The Si/CNT/Co [TArP] assembly then will provide electrons for water splitting and hydrogen gas production. A potential of 1.23 V is needed to split water, and near ideal band gap is approximately 1.4 eV. The combination of doped Si/CNT/Co [TArP] will enable this redox reaction to be more efficient.

  3. Carbon nanotube-doped tellurite glasses

    NASA Astrophysics Data System (ADS)

    Mazali, I. O.; Chillcce, E. F.; Ferreira, O. P.; Rodriguez, E.; Jacob, G. J.; Cesar, C. L.; Barbosa, L. C.

    2008-02-01

    In the past it was observed that buck ball doped glasses showed enhanced optical nonlinearities. However, carbon nanotubes are much more stable than buck ball and should be a better choice for that purpose. Therefore we decided to investigate the possibility to produce carbon nanotubes doped tellurite glasses and measured their optical nonlinearities. Tellurite glasses already have a larger nonlinearity compared to silica, and other, glasses. We produced TeO II-ZnO tellurite family glasses doped with multi wall Carbon Nanotube (CNT). The CNTs acquired from Carbolex were vigorously mechanically mixed with the tellurite glass precursors and melted in platinum crucible around 650°C in a controlled atmosphere inside an electrical induction furnace. We used the lowest temperature possible and controlled atmosphere to avoid the CNT oxidation. The glass melt was cast in a stainless steel and thermally treated at 300°C for 5 hours to relieve internal stresses. The samples were than cutted and polished to perform the optical characterization. We measured refractive index and thermo physical properties, such as vitreous transition T g, crystallization onset T x and melting T f temperatures. Raman spectroscopy showed the possible presence of CNTs.

  4. Carbon Cryogel Silicon Composite Anode Materials for Lithium Ion Batteries

    NASA Technical Reports Server (NTRS)

    Woodworth James; Baldwin, Richard; Bennett, William

    2010-01-01

    A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. 10 One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nano-foams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. 1-4,9 Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

  5. Terahertz Stimulated Emission from Silicon Doped by Hydrogenlike Acceptors

    NASA Astrophysics Data System (ADS)

    Pavlov, S. G.; Deßmann, N.; Shastin, V. N.; Zhukavin, R. Kh.; Redlich, B.; van der Meer, A. F. G.; Mittendorff, M.; Winnerl, S.; Abrosimov, N. V.; Riemann, H.; Hübers, H.-W.

    2014-04-01

    Stimulated emission in the terahertz frequency range has been realized from boron acceptor centers in silicon. Population inversion is achieved at resonant optical excitation on the 1Γ8+ → 1Γ7-, 1Γ6-, 4Γ8- intracenter transitions with a midinfrared free-electron laser. Lasing occurs on two intracenter transitions around 1.75 THz. The upper laser levels are the 1Γ7-, 1Γ6-, and 4Γ8- states, and the lower laser level for both emission lines is the 2Γ8+ state. In contrast to n-type intracenter silicon lasers, boron-doped silicon lasers do not involve the excited states with the longest lifetimes. Instead, the absorption cross section for the pump radiation is the dominating factor. The four-level lasing scheme implies that the deepest even-parity boron state is the 2Γ8+ state and not the 1Γ7+ split-off ground state, as indicated by other experiments. This is confirmed by infrared absorption spectroscopy of Si:B.

  6. Boron- and phosphorus-doped polycrystalline silicon thin films prepared by silver-induced layer exchange

    SciTech Connect

    Antesberger, T.; Wassner, T. A.; Jaeger, C.; Algasinger, M.; Kashani, M.; Scholz, M.; Matich, S.; Stutzmann, M.

    2013-05-27

    Intentional boron and phosphorus doping of polycrystalline silicon thin films on glass prepared by the silver-induced layer exchange is presented. A silver/(titanium) oxide/amorphous silicon stack is annealed at temperatures below the eutectic temperature of the Ag/Si system, leading to a complete layer exchange and simultaneous crystallization of the amorphous silicon. Intentional doping of the amorphous silicon prior to the exchange process results in boron- or phosphorus-doped polycrystalline silicon. Hall effect measurements show carrier concentrations between 2 Multiplication-Sign 10{sup 17} cm{sup -3} and 3 Multiplication-Sign 10{sup 20} cm{sup -3} for phosphorus and 4 Multiplication-Sign 10{sup 18} cm{sup -3} to 3 Multiplication-Sign 10{sup 19} cm{sup -3} for boron-doped layers, with carrier mobilities up to 90 cm{sup 2}/V s.

  7. Studies on the reactive melt infiltration of silicon and silicon-molybdenum alloys in porous carbon

    NASA Technical Reports Server (NTRS)

    Singh, M.; Behrendt, D. R.

    1992-01-01

    Investigations on the reactive melt infiltration of silicon and silicon-1.7 and 3.2 at percent molybdenum alloys into porous carbon preforms have been carried out by process modeling, differential thermal analysis (DTA) and melt infiltration experiments. These results indicate that the initial pore volume fraction of the porous carbon preform is a critical parameter in determining the final composition of the raction-formed silicon carbide and other residual phases. The pore size of the carbon preform is very detrimental to the exotherm temperatures due to liquid silicon-carbon reactions encountered during the reactive melt infiltration process. A possible mechanism for the liquid silicon-porous (glassy) carbon reaction has been proposed. The composition and microstructure of the reaction-formed silicon carbide has been discussed in terms of carbon preform microstructures, infiltration materials, and temperatures.

  8. First Principles Atomistic Model for Carbon-Doped Boron Suboxide

    DTIC Science & Technology

    2014-09-01

    First Principles Atomistic Model for Carbon-Doped Boron Suboxide by Amol B Rahane, Jennifer S Dunn, and Vijay Kumar ARL-TR-7106...2014 First Principles Atomistic Model for Carbon-Doped Boron Suboxide Amol B Rahane Dr Vijay Kumar Foundation 1969 Sector 4 Gurgaon...Final 3. DATES COVERED (From - To) October 2013–July 2014 4. TITLE AND SUBTITLE First Principles Atomistic Model for Carbon-Doped Boron Suboxide

  9. Controlled in situ boron doping of short silicon nanowires grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Das Kanungo, Pratyush; Zakharov, Nikolai; Bauer, Jan; Breitenstein, Otwin; Werner, Peter; Goesele, Ulrich

    2008-06-01

    Epitaxial silicon nanowires (NWs) of short heights (˜280nm) on Si ⟨111⟩ substrate were grown and doped in situ with boron on a concentration range of 1015-1019cm-3 by coevaporation of atomic Si and B by molecular beam epitaxy. Transmission electron microscopy revealed a single-crystalline structure of the NWs. Electrical measurements of the individual NWs confirmed the doping. However, the low doped (1015cm-3) and medium doped (3×1016 and 1×1017cm-3) NWs were heavily depleted by the surface states while the high doped (1018 and 1019cm-3) ones showed volume conductivities expected for the corresponding intended doping levels.

  10. Acrylonitrile, an advantageous precursor to synthesize nitrogen doped carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Aguilar-Elguézabal, A.; Román-Aguirre, M.; De la Torre, L.; Zaragoza, E. A.

    2017-05-01

    The nitrogen doped carbon nanotubes present specific characteristics that offer better performance than pure carbon nanotubes for application like biomedicine, hydrogen adsorption and electrocataytic devices. This work present a simple method to obtain well-aligned nitrogen doped multi wall carbon nanotubes, which present open channels with diameter around 50 nm. These carbon nanotubes are obtained using acrylonitrile as carbon and nitrogen source, which offers some advantages on the use of other precursors like ammonia, pyridine, benzylamine, acetonitrile or melamine.

  11. Dynamics of iron-acceptor-pair formation in co-doped silicon

    NASA Astrophysics Data System (ADS)

    Bartel, T.; Gibaja, F.; Graf, O.; Gross, D.; Kaes, M.; Heuer, M.; Kirscht, F.; Möller, C.; Lauer, K.

    2013-11-01

    The pairing dynamics of interstitial iron and dopants in silicon co-doped with phosphorous and several acceptor types are presented. The classical picture of iron-acceptor pairing dynamics is expanded to include the thermalization of iron between different dopants. The thermalization is quantitatively described using Boltzmann statistics and different iron-acceptor binding energies. The proper understanding of the pairing dynamics of iron in co-doped silicon will provide additional information on the electronic properties of iron-acceptor pairs and may become an analytical method to quantify and differentiate acceptors in co-doped silicon.

  12. Dynamics of iron-acceptor-pair formation in co-doped silicon

    SciTech Connect

    Bartel, T.; Gibaja, F.; Graf, O.; Gross, D.; Kaes, M.; Heuer, M.; Kirscht, F.; Möller, C.; Lauer, K.

    2013-11-11

    The pairing dynamics of interstitial iron and dopants in silicon co-doped with phosphorous and several acceptor types are presented. The classical picture of iron-acceptor pairing dynamics is expanded to include the thermalization of iron between different dopants. The thermalization is quantitatively described using Boltzmann statistics and different iron-acceptor binding energies. The proper understanding of the pairing dynamics of iron in co-doped silicon will provide additional information on the electronic properties of iron-acceptor pairs and may become an analytical method to quantify and differentiate acceptors in co-doped silicon.

  13. Control of carbon balance in a silicon smelting furnace

    DOEpatents

    Dosaj, Vishu D.; Haines, Cathryn M.; May, James B.; Oleson, John D.

    1992-12-29

    The present invention is a process for the carbothermic reduction of silicon dioxide to form elemental silicon. Carbon balance of the process is assessed by measuring the amount of carbon monoxide evolved in offgas exiting the furnace. A ratio of the amount of carbon monoxide evolved and the amount of silicon dioxide added to the furnace is determined. Based on this ratio, the carbon balance of the furnace can be determined and carbon feed can be adjusted to maintain the furnace in carbon balance.

  14. Carbon nanotube-amorphous silicon hybrid solar cell with improved conversion efficiency.

    PubMed

    Funde, Adinath M; Nasibulin, Albert G; Syed, Hashmi Gufran; Anisimov, Anton S; Tsapenko, Alexey; Lund, Peter; Santos, J D; Torres, I; Gandía, J J; Cárabe, J; Rozenberg, A D; Levitsky, Igor A

    2016-05-06

    We report a hybrid solar cell based on single walled carbon nanotubes (SWNTs) interfaced with amorphous silicon (a-Si). The high quality carbon nanotube network was dry transferred onto intrinsic a-Si forming Schottky junction for metallic SWNT bundles and heterojunctions for semiconducting SWNT bundles. The nanotube chemical doping and a-Si surface treatment minimized the hysteresis effect in current-voltage characteristics allowing an increase in the conversion efficiency to 1.5% under an air mass 1.5 solar spectrum simulator. We demonstrated that the thin SWNT film is able to replace a simultaneously p-doped a-Si layer and transparent conductive electrode in conventional amorphous silicon thin film photovoltaics.

  15. Crystal growth of MCZ silicon with ultralow carbon concentration

    NASA Astrophysics Data System (ADS)

    Nagai, Y.; Nakagawa, S.; Kashima, K.

    2014-09-01

    In this study, we investigated the evaporation of carbon monoxide (CO) from silicon melt during crystal growth by evaluating the carbon concentrations in the crystals using photoluminescence (PL) spectroscopy. In order to achieve greater carrier lifetimes in magnetic-field-induced Czochralski (MCZ) silicon for high-power insulated-gate bipolar transistor (IGBT) devices, we focused on the reduction of carbon impurities in MCZ silicon, that act as heterogeneous nucleation sites for oxygen precipitates. To obtain MCZ silicon with a carbon concentration lower than that of floating-zone (FZ) silicon, it is necessary to prevent the back-diffusion of CO from the hot graphite components into the melt and promote CO evaporation from the melt. By promoting CO evaporation, we managed to grow 6-in. CZ silicon crystals with a carbon concentration lower than 1.0×1014 atoms/cm3 at a solidified fraction of 80%.

  16. Investigation of the properties of carbon-base nanostructures doped YBa2Cu3O7-δ high temperature superconductor

    NASA Astrophysics Data System (ADS)

    Dadras, Sedigheh; Ghavamipour, Mahshid

    2016-03-01

    In this research, we have investigated the effects of three samples of carbon-base nanostructures (carbon nanoparticles, carbon nanotubes and silicon carbide nanoparticles) doping on the properties of Y1Ba2Cu3O7-δ (YBCO) high temperature superconductor. The pure and doped YBCO samples were synthesized by sol-gel method and characterized by resistivity versus temperature (ρ-T), current versus voltage (I-V), through X-ray diffraction (XRD) and scanning electron microscope (SEM) analysis. The results confirmed that for all the samples, the orthorhombic phase of YBCO compound is formed. We found that the pinning energy and critical current density of samples increase by adding carbon nanostructures to YBCO compound. Also critical temperature is improved by adding carbon nanotubes to YBCO compound, while it does not change much for carbon and silicon carbide nanoparticles doped compounds. Furthermore, the samples were characterized by UV-vis spectroscopy in 300 K and the band gap of the samples was determined. We found that the carbon nanotubes doping decreases YBCO band gap in normal state from 1.90 eV to 1.68 eV, while carbon and SiC nanoparticles doping increases it to 2.20 and 3.37 eV respectively.

  17. Monolayer contact doping of silicon surfaces and nanowires using organophosphorus compounds.

    PubMed

    Hazut, Ori; Agarwala, Arunava; Subramani, Thangavel; Waichman, Sharon; Yerushalmi, Roie

    2013-12-02

    Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures(1). MLCD results in the formation of highly controlled, ultra shallow and sharp doping profiles at the nanometer scale. In MLCD process the dopant source is a monolayer containing dopant atoms. In this article a detailed procedure for surface doping of silicon substrate as well as silicon nanowires is demonstrated. Phosphorus dopant source was formed using tetraethyl methylenediphosphonate monolayer on a silicon substrate. This monolayer containing substrate was brought to contact with a pristine intrinsic silicon target substrate and annealed while in contact. Sheet resistance of the target substrate was measured using 4 point probe. Intrinsic silicon nanowires were synthesized by chemical vapor deposition (CVD) process using a vapor-liquid-solid (VLS) mechanism; gold nanoparticles were used as catalyst for nanowire growth. The nanowires were suspended in ethanol by mild sonication. This suspension was used to dropcast the nanowires on silicon substrate with a silicon nitride dielectric top layer. These nanowires were doped with phosphorus in similar manner as used for the intrinsic silicon wafer. Standard photolithography process was used to fabricate metal electrodes for the formation of nanowire based field effect transistor (NW-FET). The electrical properties of a representative nanowire device were measured by a semiconductor device analyzer and a probe station.

  18. Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

    PubMed Central

    Hazut, Ori; Agarwala, Arunava; Subramani, Thangavel; Waichman, Sharon; Yerushalmi, Roie

    2013-01-01

    Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra shallow and sharp doping profiles at the nanometer scale. In MLCD process the dopant source is a monolayer containing dopant atoms. In this article a detailed procedure for surface doping of silicon substrate as well as silicon nanowires is demonstrated. Phosphorus dopant source was formed using tetraethyl methylenediphosphonate monolayer on a silicon substrate. This monolayer containing substrate was brought to contact with a pristine intrinsic silicon target substrate and annealed while in contact. Sheet resistance of the target substrate was measured using 4 point probe. Intrinsic silicon nanowires were synthesized by chemical vapor deposition (CVD) process using a vapor-liquid-solid (VLS) mechanism; gold nanoparticles were used as catalyst for nanowire growth. The nanowires were suspended in ethanol by mild sonication. This suspension was used to dropcast the nanowires on silicon substrate with a silicon nitride dielectric top layer. These nanowires were doped with phosphorus in similar manner as used for the intrinsic silicon wafer. Standard photolithography process was used to fabricate metal electrodes for the formation of nanowire based field effect transistor (NW-FET). The electrical properties of a representative nanowire device were measured by a semiconductor device analyzer and a probe station. PMID:24326774

  19. Impact of isovalent doping on radiation defects in silicon

    NASA Astrophysics Data System (ADS)

    Londos, C. A.; Sgourou, E. N.; Timerkaeva, D.; Chroneos, A.; Pochet, P.; Emtsev, V. V.

    2013-09-01

    Isovalent doping is an important process for the control of point defects in Si. Here, by means of infrared spectroscopy, we investigated the properties of the two main radiation-induced defects in Czochralski-Si (Cz-Si) the oxygen-vacancy (VO) and the carbon-oxygen (CiOi) centres. In particular, we investigated the effect of isovalent doping on the production, the thermal evolution, and the thermal stability of the VO and the CiOi defects. Additionally, we studied the reactions that participate upon annealing and the defects formed as a result of these reactions. Upon annealing VO is converted to VO2 defect although part of the CiOi is converted to CsO2i complexes. Thus, we studied the conversion ratios [VO2]/[VO] and [CsO2i]/[CiOi] with respect to the isovalent dopant. Additionally, the role of carbon in the above processes was discussed. A delay between the temperature characterizing the onset of the VO decay and the temperature characterizing the VO2 growth as well the further growth of VO2 after the complete disappearance of VO indicate that the VO to VO2 conversion is a complex phenomenon with many reaction processes involved. Differences exhibited between the effects of the various dopants on the properties of the two defects were highlighted. The results are discussed in view of density functional theory calculations involving the interaction of isovalent dopants with intrinsic defects, the oxygen and carbon impurities in Si.

  20. Energetics of Boron Doping of Carbon Pores

    NASA Astrophysics Data System (ADS)

    Wexler, Carlos; St. John, Alexander; Connolly, Matthew

    2014-03-01

    Carbon-based materials show promise, given their light weight, large surface areas and low cost for storage of hydrogen and other gases, e.g., for energy applications. Alas, the interaction of H2 and carbon, 4-5kJ/mol, is insufficient for room-temperature operation. Boron doping of carbon materials could raise the binding energy of H2 to 12-15kJ/mol. The nature of the incorporation of boron into a carbon structure has not been studied so far. In this talk we will address the energetics of boron incorporation into a carbon matrix via adsorption and decomposition of decaborane by first principles calculations. These demonstrate: (a) A strong adsorption of decaborane to carbon (70-80kJ/mol) resulting in easy incorporation of decaborane, sufficient for up to 10-20% B:C at low decaborane vapour pressures. (b) Identification that boron acts as an electron acceptor when incorporated substitutionally into a graphene-like material, as expected due to its valence. (c) The electrostatic field near the molecule is responsible for ca. 2/3 of the enhancement of the H2-adsorbent interaction in aromatic compounds such as pyrene, coronene and ovalene. Supported by DOE DE-FG36-08GO18142, ACS-PRF 52696-ND5, and NSF 1069091.

  1. Fabrication of graphene-silicon layered heterostructures by carbon penetration of silicon film.

    PubMed

    Meng, Lei; Wang, Yeliang; Li, Linfei; Gao, H-J

    2017-02-24

    A new, easy, in situ technique for fabricating a two-dimensional graphene-silicon layered heterostructure has been developed to meet the demand for integration between graphene and silicon-based microelectronic technology. First, carbon atoms are stored in bulk iridium, and then silicon atoms are deposited onto the Ir(111) surface and annealed. With longer annealing times, the carbon atoms penetrate from the bulk iridium to the top of the silicon and eventually coalesce there into graphene islands. Atomically resolved scanning tunneling microscopy images, high-pass fast Fourier transform treatment and Raman spectroscopy demonstrate that the top graphene layer is intact and continuous, and beneath it is the silicon layer.

  2. Fabrication of graphene-silicon layered heterostructures by carbon penetration of silicon film

    NASA Astrophysics Data System (ADS)

    Meng, Lei; Wang, Yeliang; Li, Linfei; Gao, H.-J.

    2017-02-01

    A new, easy, in situ technique for fabricating a two-dimensional graphene-silicon layered heterostructure has been developed to meet the demand for integration between graphene and silicon-based microelectronic technology. First, carbon atoms are stored in bulk iridium, and then silicon atoms are deposited onto the Ir(111) surface and annealed. With longer annealing times, the carbon atoms penetrate from the bulk iridium to the top of the silicon and eventually coalesce there into graphene islands. Atomically resolved scanning tunneling microscopy images, high-pass fast Fourier transform treatment and Raman spectroscopy demonstrate that the top graphene layer is intact and continuous, and beneath it is the silicon layer.

  3. Carbon nanotube-doped polymer optical fiber.

    PubMed

    Uchida, Sho; Martinez, Amos; Song, Yong-Won; Ishigure, Takaaki; Yamashita, Shinji

    2009-10-15

    We present a method to fabricate graded-index multimode polymer optical fibers doped with carbon nanotubes (CNTs). Such fiber structures provide the means to fully utilize the exceptional optical properties of the CNTs. The core region of the fiber is composed of CNTs and polymethyl methacrylate (PMMA) with the addition of diphenyl sulfide (DPS), which acts as the dispersion stabilizer of CNTs in PMMA as well as the dopant to increase the refractive index of the core. Utilizing 2.5 cm of the fiber as a saturable absorber, passively mode-locked lasing with duration of 3.0 ps and repetition rate of 30.3 MHz was demonstrated.

  4. Controlling the dopant dose in silicon by mixed-monolayer doping.

    PubMed

    Ye, Liang; Pujari, Sidharam P; Zuilhof, Han; Kudernac, Tibor; de Jong, Michel P; van der Wiel, Wilfred G; Huskens, Jurriaan

    2015-02-11

    Molecular monolayer doping (MLD) presents an alternative to achieve doping of silicon in a nondestructive way and holds potential for realizing ultrashallow junctions and doping of nonplanar surfaces. Here, we report the mixing of dopant-containing alkenes with alkenes that lack this functionality at various ratios to control the dopant concentration in the resulting monolayer and concomitantly the dopant dose in the silicon substrate. The mixed monolayers were grafted onto hydrogen-terminated silicon using well-established hydrosilylation chemistry. Contact angle measurements, X-ray photon spectroscopy (XPS) on the boron-containing monolayers, and Auger electron spectroscopy on the phosphorus-containing monolayers show clear trends as a function of the dopant-containing alkene concentration. Dynamic secondary-ion mass spectroscopy (D-SIMS) and Van der Pauw resistance measurements on the in-diffused samples show an effective tuning of the doping concentration in silicon.

  5. Photosensitivity of Te-doped silicon photodiodes fabricated using femtosecond laser irradiation.

    PubMed

    Li, Rui; Du, Lingyan; Tang, Fei; Jiang, Yadong; Wu, Zhiming

    2016-12-20

    Microstructured Te-doped silicon is prepared via a femtosecond laser irradiating Si coated with Si-Te bilayer films, and photodiodes are successfully fabricated from this material. The samples are thermally annealed at 773 K for three different time durations. The effects of annealing time on microstructures, infrared absorptance, and photosensitivity of Te-doped silicon are investigated. From the scanning electronic microscope images and the optical absorptance spectra, the results show that the infrared absorptance decreases with the increase of annealing time durations, while the infrared photoresponse follows an opposite tendency. At 1064 nm, the responsivity achieves 2.4836 A/W at -10  V reverse bias for the Te-doped silicon photodiode annealed at 775 K for 2 h, which is higher than that of usual commercial Si photodiodes. These results are important for the fabrication of Te-doped silicon and facilitate its application in infrared detectors.

  6. Enhanced diffusion of oxygen depending on Fermi level position in heavily boron-doped silicon

    SciTech Connect

    Torigoe, Kazuhisa Fujise, Jun; Ono, Toshiaki; Nakamura, Kozo

    2014-11-21

    The enhanced diffusivity of oxygen in heavily boron doped silicon was obtained by analyzing oxygen out-diffusion profile changes found at the interface between a lightly boron-doped silicon epitaxial layer and a heavily boron-doped silicon substrate by secondary ion mass spectrometry. It was found that the diffusivity is proportional to the square root of boron concentration in the range of 10{sup 18 }cm{sup −3}–10{sup 19 }cm{sup −3} at temperatures from 750 °C to 950 °C. The model based on the diffusion of oxygen dimers in double positive charge state could explain the enhanced diffusion. We have concluded that oxygen diffusion enhanced in heavily boron-doped silicon is attributed to oxygen dimers ionized depending on Fermi level position.

  7. Magnetic resonance investigation of gold-doped and gold-hydrogen-doped silicon

    NASA Astrophysics Data System (ADS)

    Huy, P. T.; Ammerlaan, C. A.

    2002-10-01

    Three paramagnetic centers related to gold have been observed in gold-doped and gold-doped hydrogenated silicon by magnetic resonance. One spectrum, labeled Si-NL62, corresponding to a center with monoclinic-I symmetry, presents fourfold splitting due to the hyperfine interaction with one gold atom and further hyperfine interaction with two silicon nearest-neighbor atoms. After being diffused with hydrogen in a wet atmosphere of water vapor at 1300 °C for about 30 min, a second electron paramagnetic resonance spectrum, labeled Si-NL63, is detected, also of the monoclinic-I symmetry. The spectrum of the center is characterized by a complex hyperfine structure, in which, depending on magnetic field orientation, a sevenfold splitting with the intensities 1:2:3:4:3:2:1, a fourfold splitting 4:4:4:4, and other more arbitrary structures are observed. Extra small splitting is observed in the sample diffused with deuterium, indicating hydrogen involvement in the microscopic structure of the Si-NL63 center. Under band gap illumination the third center of a one-gold-two-hydrogen complex is observed. The center, labeled Si-NL64, has low triclinic symmetry and features the hyperfine interactions with one gold and two nearly equivalent hydrogen atoms. This results in a (1:2:1):(1:2:1):(1:2:1):(1:2:1) structure of each group of spectral lines. Spin-Hamiltonian parameters for the three spectra are determined and microscopic models are discussed.

  8. Behaviour of Silicon-Doped CFC Limiter under High Heat Load in TEXTOR-94

    NASA Astrophysics Data System (ADS)

    Huber, A.; Philipps, V.; Hirai, T.; Kirschner, A.; Lehnen, M.; Pospieszczyk, A.; Schweer, B.; Sergienko, G.

    In order to study the impurity production, recycling and power deposition a Si doped CFC test limiter (NS31) was used in TEXTOR-94. The release of impurities (C, Si, O, Cr, CD radicals) was measured spectroscopically. A reduced methane production was found in the Si doped graphite when compared to a pure graphite limiter. A smaller decrease of the carbon fluxes could also be observed. The limiter contained about 1%-1.5% of Si, but a relative Si flux (Si/D) from the Si doped CFC surface between 0.12% and 0.4% has been measured. A chemical erosion of Si due to formation of SiDx has not been observed. Silicon evaporated from the surface at temperatures above 1500°C. This led to an increase of Si concentration and total radiation losses from the plasma. Surface analysis shows the formation of microcracks and holes on the plasma exposed limiter surface. The released Si was deposited in the vicinity of the tangency point of the limiter. Whereas a Si depletion was observed in the area of highest power loading with values reaching in and in-between fibres values of 0.03% and 0.02% respectively.

  9. Influence of the doping element on the electron mobility in n-silicon

    NASA Astrophysics Data System (ADS)

    Kaiblinger-Grujin, G.; Kosina, H.; Selberherr, S.

    1998-03-01

    We present a theoretical approach to study the dependence of the electron mobility on the dopant species in n-doped silicon under low electric fields. The electron charge distribution of the impurities is calculated by the Thomas-Fermi theory using the energy functional formulation. Ionized impurity scattering has been treated within the Born approximation. Our model accounts for degenerate statistics, dispersive screening and pair scattering, which become important in heavily doped semiconductors. The dielectric function is accurately approximated by a rational function. A new expression for the second Born amplitude of a Yukawa-like charge distribution is derived, which now depends on the atomic and electron numbers of the impurity ion. Monte Carlo simulations including all important scattering mechanism have been performed in the doping concentration range from 1015 to 1021cm-3. The agreement with experimental data is excellent. The results confirm the lower electron mobility in As-doped silicon in comparison to P-doped silicon.

  10. Process for fabricating device structures for real-time process control of silicon doping

    DOEpatents

    Weiner, Kurt H.

    2001-01-01

    Silicon device structures designed to allow measurement of important doping process parameters immediately after the doping step has occurred. The test structures are processed through contact formation using standard semiconductor fabrication techniques. After the contacts have been formed, the structures are covered by an oxide layer and an aluminum layer. The aluminum layer is then patterned to expose the contact pads and selected regions of the silicon to be doped. Doping is then performed, and the whole structure is annealed with a pulsed excimer laser. But laser annealing, unlike standard annealing techniques, does not effect the aluminum contacts because the laser light is reflected by the aluminum. Once the annealing process is complete, the structures can be probed, using standard techniques, to ascertain data about the doping step. Analysis of the data can be used to determine probable yield reductions due to improper execution of the doping step and thus provide real-time feedback during integrated circuit fabrication.

  11. Measurement of minority carrier transport parameters in heavily doped n-type silicon

    NASA Technical Reports Server (NTRS)

    Delalamo, J.; Swanson, R. M.

    1985-01-01

    Measurement of minority transport parameters in heavily doped silicon is covered. The basic transport equations were used to define two independent parameters. Use of special vertical and lateral transistor test devices permitted the measurement of both parameters. Prior studies were normalized to show excellent agreement over the heavy doping region.

  12. Magnetism of single-walled silicon carbide nanotubes doped by boron, nitrogen and oxygen

    NASA Astrophysics Data System (ADS)

    Maghnaoui, Ahmed; Boufelfel, Ahmed

    2012-09-01

    We calculated, using spin polarized density functional theory, the electronic properties of zigzag (10,0) and armchair (6,6) semiconductor silicon carbide nanotubes (SiCNTs) doped once at the time with boron, nitrogen, and oxygen. We have looked at the two possible scenarios where the guest atom X (B, N, O), replaces the silicon XSi, or the carbon atom XC, in the unit cell. We found that in the case of one atom B @ SiCNT replacing a carbon atom position annotated by BC exhibits a magnetic moment of 1 μB/cell in both zigzag and armchair nanotubes. Also, B replacing Si, (BSi), induce a magnetic moment of 0.46 μB/cell in the zigzag (10,0) but no magnetic moment in armchair (6,6). For N substitution; (NC) and (NSi) each case induce a magnetic moment of 1 μB/cell in armchair (6,6), while NSi give rise to 0.75 μB/cell in zigzag (10,0) and no magnetic moment for NC. In contrast the case of OC and OSi did not produce any net magnetic moment in both zigzag and armchair geometries.

  13. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

    DOEpatents

    Carlson, David E.

    1980-01-01

    Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

  14. Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere

    DOEpatents

    Hersam, Mark C.; Lipson, Albert L.; Bandyopadhyay, Sudeshna; Karmel, Hunter J; Bedzyk, Michael J

    2014-05-27

    A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.

  15. Ultralow-threshold neodymium-doped microsphere lasers on a silicon chip

    NASA Astrophysics Data System (ADS)

    Ding, Yang; Fan, Huibo; Zhang, Xun; Jiang, Xiaoshun; Xiao, Min

    2017-07-01

    We demonstrate ultralow-threshold neodymium-doped silica microsphere lasers on a silicon chip with lasing wavelengths of 900 nm and 1060 nm. Neodymium-doped microsphere cavities are fabricated with a series of doping concentrations using silica sol-gel films. Experimentally, we observe single-mode lasing emissions from the high-Q microsphere cavities with a threshold of as low as 1.2 μW.

  16. Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C

    NASA Astrophysics Data System (ADS)

    Matsumura, Hideki; Hayakawa, Taro; Ohta, Tatsunori; Nakashima, Yuki; Miyamoto, Motoharu; Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke

    2014-09-01

    Phosphorus (P) or boron (B) atoms can be doped at temperatures as low as 80 to 350 °C, when crystalline silicon (c-Si) is exposed only for a few minutes to species generated by catalytic cracking reaction of phosphine (PH3) or diborane (B2H6) with heated tungsten (W) catalyzer. This paper is to investigate systematically this novel doping method, "Cat-doping", in detail. The electrical properties of P or B doped layers are studied by the Van der Pauw method based on the Hall effects measurement. The profiles of P or B atoms in c-Si are observed by secondary ion mass spectrometry mainly from back side of samples to eliminate knock-on effects. It is confirmed that the surface of p-type c-Si is converted to n-type by P Cat-doping at 80 °C, and similarly, that of n-type c-Si is to p-type by B Cat-doping. The doping depth is as shallow as 5 nm or less and the electrically activated doping concentration is 1018 to 1019 cm-3 for both P and B doping. It is also found that the surface potential of c-Si is controlled by the shallow Cat-doping and that the surface recombination velocity of minority carriers in c-Si can be enormously lowered by this potential control.

  17. Photoconductivity of organic polymer films doped with porous silicon nanoparticles and ionic polymethine dyes

    SciTech Connect

    Davidenko, N. A. Skrichevsky, V. A.; Ishchenko, A. A.; Karlash, A. Yu.; Mokrinskaya, E. V.

    2009-05-15

    Features of electrical conductivity and photoconductivity of polyvinylbutyral films containing porous silicon nanoparticles and similar films doped with cationic and anionic polymethine dyes are studied. Sensitization of the photoelectric effect by dyes with different ionicities in films is explained by the possible photogeneration of holes and electrons from dye molecules and the intrinsic bipolar conductivity of porous silicon nanoparticles. It is assumed that the electronic conductivity in porous silicon nanoparticles is higher in comparison with p-type conductivity.

  18. Strong adsorption of Al-doped carbon nanotubes toward cisplatin

    NASA Astrophysics Data System (ADS)

    Li, Wei; Li, Guo-Qing; Lu, Xiao-Min; Ma, Juan-Juan; Zeng, Peng-Yu; He, Qin-Yu; Wang, Yin-Zhen

    2016-08-01

    The adsorption of cisplatin molecule on Al-doped CNTs is investigated using density functional theory. The obtained results indicate that Al-doped carbon nanotubes can strongly absorb cisplatin. After absorbing cisplatin, the symmetry of CNTs has some changes. We innovatively defined a parameter of symmetry variation which relates to the adsorption. By analyzing the electronic structure, it can be concluded that under the circumstance that cisplatin was absorbed by Al-doped CNTs through aluminum atom of Al-doped CNTs. In conclusion, Al-doped CNTs is a kind of potential delivery carrier with high quality for anticancer drug cisplatin.

  19. One-step preparation of multiwall carbon nanotube/silicon hybrids for solar energy conversion

    NASA Astrophysics Data System (ADS)

    Lobiak, Egor V.; Bychanok, Dzmitry S.; Shlyakhova, Elena V.; Kuzhir, Polina P.; Maksimenko, Sergey A.; Bulusheva, Lyubov G.; Okotrub, Alexander V.

    2016-03-01

    The hybrid material consisting of a thin layer of multiwall carbon nanotubes (MWCNTs) on an n-doped silicon wafer was obtained in one step using an aerosol-assisted catalytic chemical vapor deposition. The MWCNTs were grown from a mixture of acetone and ethanol with ˜0.2 wt.% of iron polyoxomolybdate nanocluster of the keplerate-type structure. The samples produced at 800°C and 1050°C were tested as a solar energy converter. It was shown that photoresponse of the hybrid material significantly depends on the presence of structural defects in MWCNTs, being much higher in the case of more defective nanotubes. This is because defects lead to p-doping of nanotubes, whereas the p-n heterojunction between MWCNTs and silicon provides a high efficiency of the solar cell.

  20. Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

    DOEpatents

    Carlson, David E.; Wronski, Christopher R.

    1979-01-01

    A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

  1. Carbon Cryogel and Carbon Paper-Based Silicon Composite Anode Materials for Lithium-Ion Batteries

    NASA Technical Reports Server (NTRS)

    Woodworth, James; Baldwin, Richard; Bennett, William

    2010-01-01

    A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. 6 One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nano-foams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. 1-5 Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

  2. Silicon Composite Anode Materials for Lithium Ion Batteries Based on Carbon Cryogels and Carbon Paper

    NASA Technical Reports Server (NTRS)

    Woodworth, James; Baldwin, Richard; Bennett, William

    2010-01-01

    A variety of materials are under investigation for use as anode materials in lithium-ion batteries, of which, the most promising are those containing silicon. One such material is a composite formed via the dispersion of silicon in a resorcinol-formaldehyde (RF) gel followed by pyrolysis. Two silicon-carbon composite materials, carbon microspheres and nanofoams produced from nano-phase silicon impregnated RF gel precursors have been synthesized and investigated. Carbon microspheres are produced by forming the silicon-containing RF gel into microspheres whereas carbon nanofoams are produced by impregnating carbon fiber paper with the silicon containing RF gel to create a free standing electrode. Both materials have demonstrated their ability to function as anodes and utilize the silicon present in the material. Stable reversible capacities above 400 mAh/g for the bulk material and above 1000 mAh/g of Si have been observed.

  3. Highly doped polycrystalline silicon microelectrodes reduce noise in neuronal recordings in vivo.

    PubMed

    Saha, Rajarshi; Jackson, Nathan; Patel, Chetan; Muthuswamy, Jit

    2010-10-01

    The aims of this study are to 1) experimentally validate for the first time the nonlinear current-potential characteristics of bulk doped polycrystalline silicon in the small amplitude voltage regimes (0-200 μV) and 2) test if noise amplitudes ( 0-15 μV ) from single neuronal electrical recordings get selectively attenuated in doped polycrystalline silicon microelectrodes due to the above property. In highly doped polycrystalline silicon, bulk resistances of several hundred kilo-ohms were experimentally measured for voltages typical of noise amplitudes and 9-10 kΩ for voltages typical of neural signal amplitudes ( > 150-200 μV). Acute multiunit measurements and noise measurements were made in n=6 and n=8 anesthetized adult rats, respectively, using polycrystalline silicon and tungsten microelectrodes. There was no significant difference in the peak-to-peak amplitudes of action potentials recorded from either microelectrode (p > 0.10). However, noise power in the recordings from tungsten microelectrodes (26.36 ±10.13 pW) was significantly higher than the corresponding value in polycrystalline silicon microelectrodes (7.49 ±2.66 pW). We conclude that polycrystalline silicon microelectrodes result in selective attenuation of noise power in electrical recordings compared to tungsten microelectrodes. This reduction in noise compared to tungsten microelectrodes is likely due to the exponentially higher bulk resistances offered by highly doped bulk polycrystalline silicon in the range of voltages corresponding to noise in multiunit measurements.

  4. High surface area silicon carbide-coated carbon aerogel

    DOEpatents

    Worsley, Marcus A; Kuntz, Joshua D; Baumann, Theodore F; Satcher, Jr, Joe H

    2014-01-14

    A metal oxide-carbon composite includes a carbon aerogel with an oxide overcoat. The metal oxide-carbon composite is made by providing a carbon aerogel, immersing the carbon aerogel in a metal oxide sol under a vacuum, raising the carbon aerogel with the metal oxide sol to atmospheric pressure, curing the carbon aerogel with the metal oxide sol at room temperature, and drying the carbon aerogel with the metal oxide sol to produce the metal oxide-carbon composite. The step of providing a carbon aerogel can provide an activated carbon aerogel or provide a carbon aerogel with carbon nanotubes that make the carbon aerogel mechanically robust. Carbon aerogels can be coated with sol-gel silica and the silica can be converted to silicone carbide, improved the thermal stability of the carbon aerogel.

  5. Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C

    SciTech Connect

    Matsumura, Hideki; Hayakawa, Taro; Ohta, Tatsunori; Nakashima, Yuki; Miyamoto, Motoharu; Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke

    2014-09-21

    Phosphorus (P) or boron (B) atoms can be doped at temperatures as low as 80 to 350 °C, when crystalline silicon (c-Si) is exposed only for a few minutes to species generated by catalytic cracking reaction of phosphine (PH₃) or diborane (B₂H₆) with heated tungsten (W) catalyzer. This paper is to investigate systematically this novel doping method, “Cat-doping”, in detail. The electrical properties of P or B doped layers are studied by the Van der Pauw method based on the Hall effects measurement. The profiles of P or B atoms in c-Si are observed by secondary ion mass spectrometry mainly from back side of samples to eliminate knock-on effects. It is confirmed that the surface of p-type c-Si is converted to n-type by P Cat-doping at 80 °C, and similarly, that of n-type c-Si is to p-type by B Cat-doping. The doping depth is as shallow as 5 nm or less and the electrically activated doping concentration is 10¹⁸ to 10¹⁹cm⁻³ for both P and B doping. It is also found that the surface potential of c-Si is controlled by the shallow Cat-doping and that the surface recombination velocity of minority carriers in c-Si can be enormously lowered by this potential control.

  6. Preparation and characterization of Ni-doped carbon aerogel for supercapacitor

    NASA Astrophysics Data System (ADS)

    Wang, Shasha; Yan, Meifang; Liu, Haihua; Xu, Yuelong; Zhang, Lihui; Liu, Zhenfa

    2017-01-01

    Ni-doped carbon aerogel was prepared by impregnation methods, physical structure, and electrochemical properties were investigated. Electrochemical properties of prepared Ni-doped carbon aerogel and carbon aerogel electrodes were measured by galvanostatic charge/discharge measurements. The results show Ni-doped carbon aerogels maintain the elementary structure of carbon aerogel, but they exhibited higher specific capacitance than carbon aerogel.

  7. New hetero silicon-carbon nanostructure formation mechanism.

    PubMed

    Song, S P; Crimp, M A; Ayres, V M; Collard, C J; Holloway, J P; Brake, M L

    2004-09-01

    We report the formation of silicon and carbon hetero-nanostructures in an inductively coupled plasma system by a simultaneous growth/etching mechanism. Multi-walled carbon nanotubes were grown during one, three and five hour depositions, while tapered silicon nanowires were progressively etched. The carbon and silicon nanostructures and the interfaces between them were studied by electron microscopies and micro Raman spectroscopies. The potential of this method for large-scale controlled production of nano heterostructures without the requirement of a common catalyst is explored.

  8. Application of neutron transmutation doping method to initially p-type silicon material.

    PubMed

    Kim, Myong-Seop; Kang, Ki-Doo; Park, Sang-Jun

    2009-01-01

    The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10(19)nOmegacm(-1). The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual (32)P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

  9. Scanning Tunneling Microscopy and Spectroscopy of Silicon and Carbon Surfaces

    NASA Astrophysics Data System (ADS)

    Baker, Shenda Mary

    1992-01-01

    Scanning Tunneling Microscopy (STM) investigations and additional surface analyses were performed on carbon and silicon surfaces. A number of anomalies have been observed on highly oriented pyrolytic graphite (HOPG), including large corrugations, distorted images, large range of tip motion and the absence of defects. A mechanism involving direct contact between tip and sample or contact through a contamination layer to provide an additional conducting pathway is proposed. This model of point-contact imaging provides an explanation for added stability of the STM system, a mechanism for producing multiple tips or sliding graphite planes and an explanation for the observed anomalies. These observations indicate that the use of HOPG for testing and calibration of STM instrumentation may be misleading. Designs for the atmospheric STM used in this study are also presented. The conditions necessary for preparing a clean silicon(111) (7x7) surface are discussed. The design and analysis of heaters necessary to prepare the silicon reconstructed surface at ultrahigh vacuum (UHV) are described. Results from both radiatively and resistively heated samples are shown in addition to a comparison of topographic and barrier height images of the boron (surd 3 times surd 3) reconstructed surfaces. A spectroscopic distinction between sites of boron, silicon or contaminants is demonstrated. A synthetic boron-doped diamond was examined by a number of analytical techniques in order to determine its composition and surface morphology. Current-voltage spectroscopy taken with the STM indicates that the diamond Fermi level can be pinned in atmospheric conditions. In ultrahigh vacuum, band bending is observed, but the strength of the electric field experienced by the diamond semiconductor is less than expected; introduction of surface charges is shown to account for the field screening. Presentation of an STM study of a protein-antibody complex on a gold surface illustrates the requirements

  10. Doping of germanium and silicon crystals with non-hydrogenic acceptors for far infrared lasers

    DOEpatents

    Haller, Eugene E.; Brundermann, Erik

    2000-01-01

    A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.

  11. Reactive Melt Infiltration Of Silicon Into Porous Carbon

    NASA Technical Reports Server (NTRS)

    Behrendt, Donald R.; Singh, Mrityunjay

    1994-01-01

    Report describes study of synthesis of silicon carbide and related ceramics by reactive melt infiltration of silicon and silicon/molybdenum alloys into porous carbon preforms. Reactive melt infiltration has potential for making components in nearly net shape, performed in less time and at lower temperature. Object of study to determine effect of initial pore volume fraction, pore size, and infiltration material on quality of resultant product.

  12. Reactive Melt Infiltration Of Silicon Into Porous Carbon

    NASA Technical Reports Server (NTRS)

    Behrendt, Donald R.; Singh, Mrityunjay

    1994-01-01

    Report describes study of synthesis of silicon carbide and related ceramics by reactive melt infiltration of silicon and silicon/molybdenum alloys into porous carbon preforms. Reactive melt infiltration has potential for making components in nearly net shape, performed in less time and at lower temperature. Object of study to determine effect of initial pore volume fraction, pore size, and infiltration material on quality of resultant product.

  13. N-Type delta Doping of High-Purity Silicon Imaging Arrays

    NASA Technical Reports Server (NTRS)

    Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

    2005-01-01

    A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including

  14. Transport properties of alkali-doped multi walled carbon nanotubes.

    PubMed

    Barone, P; Barberio, M; Pingitore, V; Bonanno, A

    2012-12-01

    In this work we propose a study on electrical properties of multiwalled carbon nanotubes (MWCNT) doped with the most commonly used alkali metals. We report resistivity measurements of MWCNT exposed to doping with Li, Na, K and Cs. Our results show that, increasing the alkali exposure, the resistance of the doped sample decreases denoting a progressive sample metallization. The changes in resistivity, contrary to that observed for single walled carbon nanotubes (SWCNT) in our previous work, are independent upon the alkali properties but appear related to alkali intercalation effects in the MWCNT random network. The doping effects have been also controlled by X-ray photo electron spectroscopy (XPS). The spectra confirm the absence of chemical bonds between carbon nanotubes and alkali, validating the hypothesis of intercalation of alkali in the interstitial channels between the tubes. Our results are also confirmed by comparison between SEM images of single walled and multiwalled carbon nanotubes.

  15. Ceramic silicon-boron-carbon fibers from organic silicon-boron-polymers

    NASA Technical Reports Server (NTRS)

    Riccitiello, Salvatore R. (Inventor); Hsu, Ming-Ta S. (Inventor); Chen, Timothy S. (Inventor)

    1993-01-01

    Novel high strength ceramic fibers derived from boron, silicon, and carbon organic precursor polymers are discussed. The ceramic fibers are thermally stable up to and beyond 1200 C in air. The method of preparation of the boron-silicon-carbon fibers from a low oxygen content organosilicon boron precursor polymer of the general formula Si(R2)BR(sup 1) includes melt-spinning, crosslinking, and pyrolysis. Specifically, the crosslinked (or cured) precursor organic polymer fibers do not melt or deform during pyrolysis to form the silicon-boron-carbon ceramic fiber. These novel silicon-boron-carbon ceramic fibers are useful in high temperature applications because they retain tensile and other properties up to 1200 C, from 1200 to 1300 C, and in some cases higher than 1300 C.

  16. Method of synthesizing metal doped diamond-like carbon films

    NASA Technical Reports Server (NTRS)

    Ueno, Mayumi (Inventor); Sunkara, Mahendra Kumar (Inventor)

    2003-01-01

    A method of synthesizing metal doped carbon films by placing a substrate in a chamber with a selected amount of a metalorganic compound. An electron cyclotron resonance is applied to the chamber in order to vaporize the metalorganic compound. The resonance is applied to the chamber until a metal doped carbon film is formed. The metalorganic compound is preferably selected from the group consisting of an organic salt of ruthenium, palladium, gold or platinum.

  17. Polycrystalline silicon semiconducting material by nuclear transmutation doping

    DOEpatents

    Cleland, John W.; Westbrook, Russell D.; Wood, Richard F.; Young, Rosa T.

    1978-01-01

    A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.

  18. Atomic-scale deformation in N-doped carbon nanotubes.

    PubMed

    Sun, Chia-Liang; Wang, Houng-Wei; Hayashi, Michitoshi; Chen, Li-Chyong; Chen, Kuei-Hsien

    2006-07-05

    We present the N-doping induced atomic-scale structural deformation in N-doped carbon nanotubes by using density functional theory calculations. For substitutional N-doped nanotube clusters, the N dopant with an excess electron lone pair exhibits the high negative charge, and the homogeneously distributed dopants enlarge the tube diameter in both zigzag and armchair cases. On the other hand, in pyridine-like N-doped ones, the concentrated N atoms result in a positively curved graphene layer and, thus, can be responsible for tube wall roughness and the formation of interlinked structures.

  19. Band gap opening of monolayer and bilayer graphene doped with aluminium, silicon, phosphorus, and sulfur

    NASA Astrophysics Data System (ADS)

    Denis, Pablo A.

    2010-06-01

    The chemical doping of monolayer and bilayer graphene with aluminium, silicon, phosphorus and sulfur was investigated. Si-doped graphene has the lowest formation energy although it is semimetallic. P-doped graphene has a magnetic moment of 1 μ B and for 3 at.% of doping the band gap is 0.67 eV. Al-doped graphene is very unstable but it is an attractive material because it is metallic. To reduce the formation energies of the substitutional defects we investigated the formation of interlayer bonds in bilayer graphene. Phosphorus forms the strongest bonds between layers giving particular stability to this material. P-doped bilayer graphene has a gap of 0.43 eV but it is has no magnetic moment.

  20. Controlled in situ boron doping of short silicon nanowires grown by molecular beam epitaxy

    SciTech Connect

    Das Kanungo, Pratyush; Zakharov, Nikolai; Bauer, Jan; Breitenstein, Otwin; Werner, Peter; Goesele, Ulrich

    2008-06-30

    Epitaxial silicon nanowires (NWs) of short heights ({approx}280 nm) on Si <111> substrate were grown and doped in situ with boron on a concentration range of 10{sup 15}-10{sup 19} cm{sup -3} by coevaporation of atomic Si and B by molecular beam epitaxy. Transmission electron microscopy revealed a single-crystalline structure of the NWs. Electrical measurements of the individual NWs confirmed the doping. However, the low doped (10{sup 15} cm{sup -3}) and medium doped (3x10{sup 16} and 1x10{sup 17} cm{sup -3}) NWs were heavily depleted by the surface states while the high doped (10{sup 18} and 10{sup 19} cm{sup -3}) ones showed volume conductivities expected for the corresponding intended doping levels.

  1. Effects of low-level boron doping on the photocurrent of amorphous silicon Schottky photodiodes

    NASA Astrophysics Data System (ADS)

    Kakinuma, H.; Kasuya, Y.; Sakamoto, M.; Shibata, S.

    1989-03-01

    The effects of low-level boron doping on the photocurrent-electric field (Jph-F) characteristics of amorphous silicon Schottky photodiodes were investigated by measuring the Jph-F characteristics of a lightly B-doped photodiode with a configuration of Cr/a-Si:H/tin-doped indium oxide (ITO). The Jph-F curves, which were found to be strongly dependent on the B-doping ratio, were analyzed on the basis of Crandall's (1984) theory, and the B-doping dependencies of the mobility-lifetime (mu-tau) product for electrons and holes were deduced. The effects of low-level B-doping on the mu-tau products and space charges of the photodiodes were discussed in terms of the charge state of the dangling bond state.

  2. Effect of silicon, tantalum, and tungsten doping and polarization on bioactivity of hydroxyapatite

    NASA Astrophysics Data System (ADS)

    Dhal, Jharana

    Hydroxyapatite (HAp) ceramics has important applications as bone graft because of the structural and compositional similarities with bone tissue. However, inferior osteogenic capacity to bone and poor mechanical properties have been identified to be major disadvantages of synthetic HAp compared to the living bone tissue. The objective of the current study is to evaluate the effect of doping with higher valent cations (Tungsten, tantalum, and silicon) and polarization or combination of both on change in property of doped HAp and subsequent impact its bioactivity. In vitro study with human osteoblast cells was used to investigate the influences of doping and polarization on bone cell-materials interactions. The bioactivity of doped HAp was compared with pure HAp. Effect of doping and polarization on the change in HAp was investigated by monitoring change in mineral phases, stored charge, and activation energy of HAp. Activation energy of depolarization was used to explain the possible mechanism of polarization in doped samples. Bioactivity of HAp increased when doped with tantalum and tungsten. Polarization further increased the bioactivity of tungsten- and tantalum-doped samples. Increase in bioactivity on polarized and doped samples was attributed to increase in surface energy and increase in surface wettability. Whereas, an increase in bioactivity on doped unpolarized surface was attributed to change in microstructure. Polarized charge calculated from TSDC indicates that polarized charge decreases on tantalum- and tungsten-doped HAp. The decrease in polarized charge was attributed to the presence of significant amount of different phases that may hinder the ionic motion in doped samples. However, for silicon-doped HAp, TSDC study showed no difference in the mechanism of polarization between doped and undoped samples. Increase in silicon doping decreased the grain size though mechanism is not affected by grain size. Total stored charge decreased with increase in

  3. Method for making defect-free zone by laser-annealing of doped silicon

    DOEpatents

    Narayan, Jagdish; White, Clark W.; Young, Rosa T.

    1980-01-01

    This invention is a method for improving the electrical properties of silicon semiconductor material. The method comprises irradiating a selected surface layer of the semiconductor material with high-power laser pulses characterized by a special combination of wavelength, energy level, and duration. The combination effects melting of the layer without degrading electrical properties, such as minority-carrier diffusion length. The method is applicable to improving the electrical properties of n- and p-type silicon which is to be doped to form an electrical junction therein. Another important application of the method is the virtually complete removal of doping-induced defects from ion-implanted or diffusion-doped silicon substrates.

  4. Impact of isovalent doping on the formation of the CiOi(SiI)n defects in silicon

    NASA Astrophysics Data System (ADS)

    Christopoulos, S.-R. G.; Sgourou, E. N.; Vovk, R. V.; Chroneos, A.; Londos, C. A.

    2017-09-01

    It has been determined that carbon-oxygen-self-interstitial defects in silicon (Si) can influence the operation of devices through the concentration of intrinsic point defects. Doping with larger isovalent dopants such as germanium (Ge) and tin (Sn) can impact the formation, energetics and structure of defect clusters in Si. In the present study we use density functional theory calculations to gain insights on the formation and stability of the CiOi(SiI)n (n = 0, 1, 2) defects in Si doped with Ge or Sn. It is calculated that the CiOi(SiI)n defects will preferentially form away from the oversized dopants. This result for the interstitial clusters is opposite to what is expected for vacancy-containing clusters which strongly associate with oversized dopants.

  5. Multiple doping of silicon-germanium alloys for thermoelectric applications

    NASA Technical Reports Server (NTRS)

    Fleurial, Jean-Pierre; Vining, Cronin B.; Borshchevsky, Alex

    1989-01-01

    It is shown that heavy doping of n-type Si/Ge alloys with phosphorus and arsenic (V-V doping interaction) by diffusion leads to a significant enhancement of their carrier concentration and possible improvement of the thermoelectric figure of merit. High carrier concentrations were achieved by arsenic doping alone, but for a same doping level higher carrier mobilities and lower resistivities are obtained through phosphorus doping. By combining the two dopants with the proper diffusion treatments, it was possible to optimize the different properties, obtaining high carrier concentration, good carrier mobility and low electrical resistivity. Similar experiments, using the III-V doping interaction, were conducted on boron-doped p-type samples and showed the possibility of overcompensating the samples by diffusing arsenic, in order to get n-type behavior.

  6. Multiple doping of silicon-germanium alloys for thermoelectric applications

    NASA Technical Reports Server (NTRS)

    Fleurial, Jean-Pierre; Vining, Cronin B.; Borshchevsky, Alex

    1989-01-01

    It is shown that heavy doping of n-type Si/Ge alloys with phosphorus and arsenic (V-V doping interaction) by diffusion leads to a significant enhancement of their carrier concentration and possible improvement of the thermoelectric figure of merit. High carrier concentrations were achieved by arsenic doping alone, but for a same doping level higher carrier mobilities and lower resistivities are obtained through phosphorus doping. By combining the two dopants with the proper diffusion treatments, it was possible to optimize the different properties, obtaining high carrier concentration, good carrier mobility and low electrical resistivity. Similar experiments, using the III-V doping interaction, were conducted on boron-doped p-type samples and showed the possibility of overcompensating the samples by diffusing arsenic, in order to get n-type behavior.

  7. Carbon related defects in irradiated silicon revisited

    PubMed Central

    Wang, H.; Chroneos, A.; Londos, C. A.; Sgourou, E. N.; Schwingenschlögl, U.

    2014-01-01

    Electronic structure calculations employing hybrid functionals are used to gain insight into the interaction of carbon (C) atoms, oxygen (O) interstitials, and self-interstitials in silicon (Si). We calculate the formation energies of the C related defects Ci(SiI), CiOi, CiCs, and CiOi(SiI) with respect to the Fermi energy for all possible charge states. The Ci(SiI)2+ state dominates in almost the whole Fermi energy range. The unpaired electron in the CiOi+ state is mainly localized on the C interstitial so that spin polarization is able to lower the total energy. The three known atomic configurations of the CiCs pair are reproduced and it is demonstrated that hybrid functionals yield an improved energetic order for both the A and B-types as compared to previous theoretical studies. Different structures of the CiOi(SiI) cluster result for positive charge states in dramatically distinct electronic states around the Fermi energy and formation energies. PMID:24809804

  8. Controlled doping of silicon nanocrystals investigated by solution-processed field effect transistors.

    PubMed

    Gresback, Ryan; Kramer, Nicolaas J; Ding, Yi; Chen, Ting; Kortshagen, Uwe R; Nozaki, Tomohiro

    2014-06-24

    The doping of semiconductor nanocrystals (NCs), which is vital for the optimization of NC-based devices, remains a significant challenge. While gas-phase plasma approaches have been successful in incorporating dopant atoms into NCs, little is known about their electronic activation. Here, we investigate the electronic properties of doped silicon NC thin films cast from solution by field effect transistor analysis. We find that, analogous to bulk silicon, boron and phosphorus electronically dope Si NC thin films; however, the dopant activation efficiency is only ∼10(-2)-10(-4). We also show that surface doping of Si NCs is an effective way to alter the carrier concentrations in Si NC films.

  9. Investigation of the sulfur doping profile in femtosecond-laser processed silicon

    NASA Astrophysics Data System (ADS)

    Guenther, Kay-Michael; Gimpel, Thomas; Kontermann, Stefan; Schade, Wolfgang

    2013-05-01

    In this letter, we demonstrate that silicon can be doped with electrically active sulfur donors beyond the solubility limit of 3 × 1016 cm-3. We investigate the sulfur doping profile at the surface of femtosecond-laser processed silicon with secondary ion mass spectroscopy (SIMS) and capacitance-voltage measurements. SIMS confirms previous observations that the fs-laser process can lead to a sulfur hyperdoping of 5×1019 cm-3 at the surface. Nevertheless, the electrical measurements show that less than 1% of the sulfur is electrically active as a donor.

  10. Simultaneous magnetic and charge doping of topological insulators with carbon.

    PubMed

    Shen, Lei; Zeng, Minggang; Lu, Yunhao; Yang, Ming; Feng, Yuan Ping

    2013-12-06

    A two-step doping process, magnetic followed by charge or vice versa, is required to produce massive topological surface states (TSS) in topological insulators for many physics and device applications. Here, we demonstrate simultaneous magnetic and hole doping achieved with a single dopant, carbon, in Bi2Se3 by first-principles calculations. Carbon substitution for Se (C(Se)) results in an opening of a sizable surface Dirac gap (up to 82 meV), while the Fermi level remains inside the bulk gap and close to the Dirac point at moderate doping concentrations. The strong localization of 2p states of C(Se) favors spontaneous spin polarization via a p-p interaction and formation of ordered magnetic moments mediated by surface states. Meanwhile, holes are introduced into the system by C(Se). This dual function of carbon doping suggests a simple way to realize insulating massive TSS.

  11. Heteroatom-Doped Carbon Materials for Electrocatalysis.

    PubMed

    Asefa, Tewodros Teddy; Huang, Xiaoxi

    2017-04-11

    Fuel cells, water electrolyzers, and metal-air batteries are important energy systems that have started to play some roles in our renewable energy landscapes. However, despite much research works carried out on them, they have not yet found large-scale applications, mainly due to the unavailability of sustainable catalysts that can catalyze the reactions employed in them. Currently, noble metal-based materials are the ones that are commonly used as catalysts in most commercial fuel cells, electrolyzers, and metal-air batteries. Hence, there has been considerable research efforts worldwide to find alternative noble metal-free and metal-free catalysts composed of inexpensive, earth-abundant elements for use in the catalytic reactions employed in these energy systems. In this concept paper, catalysis in renewable energy systems, followed by the recent efforts to develop sustainable, heteroatom-doped carbon and non-noble metal-based electrocatalysts, the challenges to unravel their structure-catalytic activity relationships, and the authors' perspectives on these topics and materials, are discussed.

  12. Growth of Er-doped silicon using metalorganics by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Andry, P. S.; Varhue, W. J.; Ladipo, F.; Ahmed, K.; Adams, E.; Lavoie, M.; Klein, P. B.; Hengehold, R.; Hunter, J.

    1996-07-01

    Epitaxial growth of Er-doped silicon films has been performed by plasma-enhanced chemical vapor deposition at low temperature (430 °C) using an electron cyclotron resonance source. The goal was to incorporate an optically active center, erbium surrounded by nitrogen, through the use of the metalorganic compound tris (bis trimethyl silyl amido) erbium. Films were analyzed by Rutherford backscattering spectrometry, secondary ion mass spectroscopy, and high resolution x-ray diffraction. The characteristic 1.54 μm emission was observed by photoluminescence spectroscopy. Previous attempts to incorporate the complex (ErO6) using tris (2,2,6,6-tetramethyl- 3,5-heptanedionato) erbium (III) indicated that excessive carbon contamination lowered epitaxial quality and reduced photoluminescent intensity. In this study, chemical analysis of the films also revealed a large carbon concentration, however, the effect on epitaxial quality was much less destructive. A factorial design experiment was performed whose analysis identified the key processing parameters leading to high quality luminescent films. Hydrogen was found to be a major cause of crystal quality degradation in our metalorganic plasma-enhanced process.

  13. The modulation on luminescence of Er3+-doped silicon-rich oxide films by the structure evolution of silicon nanoclusters

    PubMed Central

    2013-01-01

    A series of silicon-rich oxide (SRO) and erbium-doped SRO (SROEr) films imbedded with structural tunable silicon nanoclusters (Si NCs) have been fabricated using sputtering followed by post-annealing. The coalescence of Si NCs is found in the films with large Si excess. The energy transfer rate between Si NCs and Er3+ is enhanced, but the luminescence efficiencies of both Si NCs and Er3+ are reduced by the coalescent microstructures. Optimization of the microstructures of Si NCs is performed, and the preferential optical performance for both Si NCs and Er3+ could be achieved when Si NCs were separated in microstructures. PMID:23331713

  14. A study of improvements in silicon solar cell efficiency due to various geometrical and doping modifications

    NASA Technical Reports Server (NTRS)

    Dunbar, P. M.; Hauser, J. R.

    1976-01-01

    This paper presents the results of continued studies of silicon solar cell operation and limitations. The objective of this paper is to report on geometrical and doping changes in silicon solar cells which result in predictions of high efficiencies. Efficiencies as high as 20 per cent (uncorrected for metal coverage and ohmic sheet resistance) have been calculated for optimized cells. The conditions required to achieve these efficiency values are discussed.

  15. Modulation of electronic properties of silicon carbide nanotubes via sulphur-doping: An ab initio study

    NASA Astrophysics Data System (ADS)

    Singh, Ram Sevak; Solanki, Ankit

    2016-03-01

    Silicon carbide nanotubes (SiCNTs) have received a great deal of scientific and commercial interest due to their intriguing properties that include high temperature stability and electronic properties. For their efficient and widespread applications, tuning of electronic properties of SiCNTs is an attractive study. In this article, electronic properties of sulphur doped (S-doped) zigzag (9 , 0) SiCNT is investigated by ab initio calculations based on density functional theory (DFT). Energy band structures and density of states of fully optimized undoped and doped structures with varying dopant concentration are calculated. S-doped on C-site of the nanotube exhibits a monotonic reduction of energy gap with increase in dopant concentration, and the nanotube transforms from semiconductor to metal at high dopant concentration. In case of S-doped on Si-site doping has less influence on modulating electronic structures, which results in reduction of energy gap up to a moderate doping concentration. Importantly, S preferential substitutes of Si-sites and the nanotube with S-doped on Si-site are energetically more stable as compared to the nanotube with S-doped on C-site. The study of tunable electronic properties in S-doped SiCNT may have potential in fabricating nanoelectronic devices, hydrogen storage and gas sensing applications.

  16. Influence of oxygen on defect production in electron-irradiated, boron-doped silicon

    NASA Technical Reports Server (NTRS)

    Deangelis, H. M.; Drevinsky, P. J.

    1984-01-01

    Deep level transient spectroscopy (DLTS) measurements were made on float-zone and crucible-grown, boron-doped silicon irradiated with 1-MeV electrons. The minority carrier trap attributed to a boron-related state, was not seen in low-resistivity, float-zone silicon. However, a new majority carrier trap was observed in these samples. In the case of more lightly doped material the minority carrier trap was present, and its introduction rate was lower in float-zone than in crucible-grown silicon. For 1- and 10-ohm-cm float-zone material that was oxidized during processing, the introduction rates for this trap were comparable to those for crucible-grown silicon. This behavior indicates that the minority carrier trap involves oxygen and that it may be due to a boron-oxygen complex. The majority carrier trap seen in heavily doped, float-zone silicon may also involve boron but not oxygen. Observed trap concentrations suggest that oxygen content in the regions examined by DLTS is affected by processing techniques. Other differences were observed in defect production and annealing behavior of electron-irradiated, float-zone and crucible-grown silicon.

  17. Oxygen defect processes in silicon and silicon germanium

    SciTech Connect

    Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlögl, U.

    2015-06-15

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  18. Plasma stabilisation of metallic nanoparticles on silicon for the growth of carbon nanotubes

    SciTech Connect

    Esconjauregui, S.; Fouquet, M.; Bayer, B. C.; Gamalski, A. D.; Chen Bingan; Xie Rongsi; Hofmann, S.; Robertson, J.; Cepek, C.; Bhardwaj, S.; Ducati, C.

    2012-08-01

    Ammonia (NH{sub 3}) plasma pretreatment is used to form and temporarily reduce the mobility of Ni, Co, or Fe nanoparticles on boron-doped mono- and poly-crystalline silicon. X-ray photoemission spectroscopy proves that NH{sub 3} plasma nitrides the Si supports during nanoparticle formation which prevents excessive nanoparticle sintering/diffusion into the bulk of Si during carbon nanotube growth by chemical vapour deposition. The nitridation of Si thus leads to nanotube vertical alignment and the growth of nanotube forests by root growth mechanism.

  19. Doping of carbon foams for use in energy storage devices

    DOEpatents

    Mayer, Steven T.; Pekala, Richard W.; Morrison, Robert L.; Kaschmitter, James L.

    1994-01-01

    A polymeric foam precursor, wetted with phosphoric acid, is pyrolyzed in an inert atmosphere to produce an open-cell doped carbon foam, which is utilized as a lithium intercalation anode in a secondary, organic electrolyte battery. Tests were conducted in a cell containing an organic electrolyte and using lithium metal counter and reference electrodes, with the anode located therebetween. Results after charge and discharge cycling, for a total of 6 cycles, indicated a substantial increase in the energy storage capability of the phosphorus doped carbon foam relative to the undoped carbon foam, when used as a rechargeable lithium ion battery.

  20. Doping of carbon foams for use in energy storage devices

    DOEpatents

    Mayer, S.T.; Pekala, R.W.; Morrison, R.L.; Kaschmitter, J.L.

    1994-10-25

    A polymeric foam precursor, wetted with phosphoric acid, is pyrolyzed in an inert atmosphere to produce an open-cell doped carbon foam, which is utilized as a lithium intercalation anode in a secondary, organic electrolyte battery. Tests were conducted in a cell containing an organic electrolyte and using lithium metal counter and reference electrodes, with the anode located there between. Results after charge and discharge cycling, for a total of 6 cycles, indicated a substantial increase in the energy storage capability of the phosphorus doped carbon foam relative to the undoped carbon foam, when used as a rechargeable lithium ion battery. 3 figs.

  1. Thermally stimulated current spectroscopy on silicon planar-doped GaAs samples

    NASA Astrophysics Data System (ADS)

    Rubinger, R. M.; Bezerra, J. C.; Chagas, E. F.; González, J. C.; Rodrigues, W. N.; Ribeiro, G. M.; Moreira, M. V. B.; de Oliveira, A. G.

    1998-10-01

    Using thermally stimulated current (TSC) spectroscopy we have identified the presence of several deep traps in low temperature grown (LTG) nonintentionally doped bulk molecular beam epitaxy (MBE)-GaAs and silicon planar-doped MBE-GaAs samples. The experiments of TSC spectroscopy were carried out on a LTG MBE-GaAs epilayer grown at 300 °C and the planar-doped layer with a nominal silicon concentration of 3.4×1012cm-2. The LTG nonintentionally doped bulk MBE-GaAs sample shows three peaks in the TSC spectra but the planar-doped MBE-GaAs sample shows spectra similar to those of bulk samples grown by the liquid-encapsulated Czochralski and vertical gradient freeze methods. The main achievement is the experimental evidence that the potential well present in the planar-doped sample is effective in detecting the presence of different deep traps previously not seen in LTG bulk MBE-GaAs epilayers due to a shorter carrier lifetime (about 10-12 s) in the conduction band which occurs due to EL2-like deep traps recombination. This fact is evidenced by a strong hopping conduction in LTG bulk MBE-GaAs samples at temperatures lower than 300 K, but not in planar-doped MBE-GaAs samples because the two-dimensional electron gas has a higher mobility than lateral LTG bulk MBE-GaAs epilayers.

  2. Two-photon-induced internal modification of silicon by erbium-doped fiber laser.

    PubMed

    Verburg, P C; Römer, G R B E; Huis In 't Veld, A J

    2014-09-08

    Three-dimensional bulk modification of dielectric materials by multiphoton absorption of laser pulses is a well-established technology. The use of multiphoton absorption to machine bulk silicon has been investigated by a number of authors using femtosecond laser sources. However, no modifications confined in bulk silicon, induced by multiphoton absorption, have been reported so far. Based on results from numerical simulations, we employed an erbium-doped fiber laser operating at a relatively long pulse duration of 3.5 nanoseconds and a wavelength of 1549 nm for this process. We found that these laser parameters are suitable to produce modifications at various depths inside crystalline silicon.

  3. Electrical conductivity of polycrystalline AI/sub 2/O/sub 3/ doped with silicon

    SciTech Connect

    Lee, C.H.; Kroger, F.A.

    1985-02-01

    Direct current conductivity was measured for polycrystalline AI/sub 2/O/sub 3/ doped with silicon, which is found to act as a single donor, the donor level lying approx. = 165 kJ/mol (approx. =1.7 eV) below the conduction band. Silicon in excess of the solubility limit (approx. =220 ppm at 1500/sup 0/C, 300 ppm at 1600/sup 0/C) is present as a glassy aluminosilicate second phase. Silicon dissolved in AI/sub 2/O/sub 3/ tends to segregate at grain boundaries.

  4. Conformal doping of topographic silicon structures using a radial line slot antenna plasma source

    NASA Astrophysics Data System (ADS)

    Ueda, Hirokazu; Ventzek, Peter L. G.; Oka, Masahiro; Horigome, Masahiro; Kobayashi, Yuuki; Sugimoto, Yasuhiro; Nozawa, Toshihisa; Kawakami, Satoru

    2014-06-01

    Fin extension doping for 10 nm front end of line technology requires ultra-shallow high dose conformal doping. In this paper, we demonstrate a new radial line slot antenna plasma source based doping process that meets these requirements. Critical to reaching true conformality while maintaining fin integrity is that the ion energy be low and controllable, while the dose absorption is self-limited. The saturated dopant later is rendered conformal by concurrent amorphization and dopant containing capping layer deposition followed by stabilization anneal. Dopant segregation assists in driving dopants from the capping layer into the sub silicon surface. Very high resolution transmission electron microscopy-Energy Dispersive X-ray spectroscopy, used to prove true conformality, was achieved. We demonstrate these results using an n-type arsenic based plasma doping process on 10 to 40 nm high aspect ratio fins structures. The results are discussed in terms of the different types of clusters that form during the plasma doping process.

  5. Highly Doped Polycrystalline Silicon Microelectrodes Reduce Noise in Neuronal Recordings In Vivo

    PubMed Central

    Saha, Rajarshi; Jackson, Nathan; Patel, Chetan; Muthuswamy, Jit

    2013-01-01

    The aims of this study are to 1) experimentally validate for the first time the nonlinear current-potential characteristics of bulk doped polycrystalline silicon in the small amplitude voltage regimes (0–200 μV) and 2) test if noise amplitudes (0–15 μV) from single neuronal electrical recordings get selectively attenuated in doped polycrystalline silicon microelectrodes due to the above property. In highly doped polycrystalline silicon, bulk resistances of several hundred kilo-ohms were experimentally measured for voltages typical of noise amplitudes and 9–10 kΩ for voltages typical of neural signal amplitudes (>150–200 μV). Acute multiunit measurements and noise measurements were made in n = 6 and n = 8 anesthetized adult rats, respectively, using polycrystalline silicon and tungsten microelectrodes. There was no significant difference in the peak-to-peak amplitudes of action potentials recorded from either microelectrode (p > 0.10). However, noise power in the recordings from tungsten microelectrodes (26.36 ± 10.13 pW) was significantly higher (p < 0.001) than the corresponding value in polycrystalline silicon microelectrodes (7.49 ± 2.66 pW). We conclude that polycrystalline silicon microelectrodes result in selective attenuation of noise power in electrical recordings compared to tungsten microelectrodes. This reduction in noise compared to tungsten microelectrodes is likely due to the exponentially higher bulk resistances offered by highly doped bulk polycrystalline silicon in the range of voltages corresponding to noise in multiunit measurements. PMID:20667815

  6. Porous doped silicon nanowires for lithium ion battery anode with long cycle life.

    PubMed

    Ge, Mingyuan; Rong, Jiepeng; Fang, Xin; Zhou, Chongwu

    2012-05-09

    Porous silicon nanowires have been well studied for various applications; however, there are only very limited reports on porous silicon nanowires used for energy storage. Here, we report both experimental and theoretical studies of porous doped silicon nanowires synthesized by direct etching of boron-doped silicon wafers. When using alginate as a binder, porous silicon nanowires exhibited superior electrochemical performance and long cycle life as anode material in a lithium ion battery. Even after 250 cycles, the capacity remains stable above 2000, 1600, and 1100 mAh/g at current rates of 2, 4, and 18 A/g, respectively, demonstrating high structure stability due to the high porosity and electron conductivity of the porous silicon nanowires. A mathematic model coupling the lithium ion diffusion and the strain induced by lithium intercalation was employed to study the effect of porosity and pore size on the structure stability. Simulation shows silicon with high porosity and large pore size help to stabilize the structure during charge/discharge cycles.

  7. Structural Elements of Shallow Thermal Donors Formed in Nitrogen-Gas-Doped Silicon Crystals

    NASA Astrophysics Data System (ADS)

    Hara, Akito

    2007-02-01

    It has been reported that shallow thermal donors (STDs) are formed in oxygen-rich silicon (Si) crystals preannealed in nitrogen gas (N-gas-doped) and also in hydrogen-doped (H-doped) oxygen-rich Si crystals. The STDs formed in these crystals exhibit very similar electronic structures. Experiments using far-infrared optical absorption showed that several hydrogen-like STDs were formed at the same time and their energy levels in both the above-mentioned crystals were very similar. It has also been reported that the g-values of the STDs formed in both the crystals were identical. On the basis of electron-nucleus double resonance results, it has been strongly suggested that a hydrogen impurity is incorporated as a structural element of the STDs formed in the H-doped Si crystals. However, the origin of the STDs that are formed in N-gas-doped Si crystals is still unclear. To clarify this point, hydrogen detection in N-gas-doped Si was conducted and the annealing behaviors of STDs in N-gas-doped Si and H-doped Si were compared by electron spin resonance and far-infrared optical absorption measurement. It was concluded that the origin of the STDs formed in N-gas-doped Si crystals is not related to the hydrogen impurity.

  8. Spin-on doping of germanium-on-insulator wafers for monolithic light sources on silicon

    NASA Astrophysics Data System (ADS)

    Al-Attili, Abdelrahman Z.; Kako, Satoshi; Husain, Muhammad K.; Gardes, Frederic Y.; Arimoto, Hideo; Higashitarumizu, Naoki; Iwamoto, Satoshi; Arakawa, Yasuhiko; Ishikawa, Yasuhiko; Saito, Shinichi

    2015-05-01

    High electron doping of germanium (Ge) is considered to be an important process to convert Ge into an optical gain material and realize a monolithic light source integrated on a silicon chip. Spin-on doping is a method that offers the potential to achieve high doping concentrations without affecting crystalline qualities over other methods such as ion implantation and in-situ doping during material growth. However, a standard spin-on doping recipe satisfying these requirements is not yet available. In this paper we examine spin-on doping of Ge-on-insulator (GOI) wafers. Several issues were identified during the spin-on doping process and specifically the adhesion between Ge and the oxide, surface oxidation during activation, and the stress created in the layers due to annealing. In order to mitigate these problems, Ge disks were first patterned by dry etching followed by spin-on doping. Even by using this method to reduce the stress, local peeling of Ge could still be identified by optical microscope imaging. Nevertheless, most of the Ge disks remained after the removal of the glass. According to the Raman data, we could not identify broadening of the lineshape which shows a good crystalline quality, while the stress is slightly relaxed. We also determined the linear increase of the photoluminescence intensity by increasing the optical pumping power for the doped sample, which implies a direct population and recombination at the gamma valley.

  9. Electrical Transport in Thin Films of Doped Silicon Nanocrystals

    NASA Astrophysics Data System (ADS)

    Chen, Ting

    Colloidal semiconductor nanocrystals (NCs) have shown great potential for thin-film optoelectronics, such as solar cells and light emitting diodes (LEDs), due to their size-tunable electronic properties and solution processability. Significant progress has been made in developing synthetic methods to prepare high quality NCs, achieving controllable doping, and integrating NCs into high performance electronic devices. Most electronic applications rely on the electrical conduction through NC films, therefore, fundamental understanding of the carrier transport in NC films is required to further improve device performance and provide guide for future device design. My research is inspired by the successful achievement of a highly efficient LED with hydrosilylated Si NCs as the emissive layer. To better understand the electrical conduction in the Si NC system, a systematic study of the temperature and electric-field dependence of the film conductivity is performed. It shows that the conductivity of the Si NC film is limited by the ionization of rare NCs containing donor impurities and the carrier transport follows nearest neighbor hopping. The Si NCs are inherently doped with a very small concentration of impurities, about 1 donor per 1000 NCs. This is also the first study of carrier transport in a lightly doped NC system, and results obtained in this work can apply to other NC materials as well. The organic ligands used to passivate NC surface are necessary to achieve strong photoluminescence, however, they inhibit the carrier transport due to the resulting large tunneling barrier between neighboring NCs. The localization length estimated from the temperature data in the high electric field regime is about 1 nm. In addition, the activation energy required for conduction also depends on the surrounding medium of NCs, the electrical conduction can be improved by reducing the activation energy through engineering of the matrix of NC arrays. Doping is critical to enable

  10. Electron and photon degradation in aluminum, gallium and boron doped float zone silicon solar cells

    NASA Technical Reports Server (NTRS)

    Rahilly, W. P.; Scott-Monck, J.; Anspaugh, B.; Locker, D.

    1976-01-01

    Solar cells fabricated from Al, Ga and B doped Lopex silicon over a range of resistivities were tested under varying conditions of 1 MeV electron fluence, light exposures and thermal cycling. Results indicate that Al and Ga can replace B as a P type dopant to yield improved solar cell performance.

  11. Contact doping of silicon wafers and nanostructures with phosphine oxide monolayers.

    PubMed

    Hazut, Ori; Agarwala, Arunava; Amit, Iddo; Subramani, Thangavel; Zaidiner, Seva; Rosenwaks, Yossi; Yerushalmi, Roie

    2012-11-27

    Contact doping method for the controlled surface doping of silicon wafers and nanometer scale structures is presented. The method, monolayer contact doping (MLCD), utilizes the formation of a dopant-containing monolayer on a donor substrate that is brought to contact and annealed with the interface or structure intended for doping. A unique feature of the MLCD method is that the monolayer used for doping is formed on a separate substrate (termed donor substrate), which is distinct from the interface intended for doping (termed acceptor substrate). The doping process is controlled by anneal conditions, details of the interface, and molecular precursor used for the formation of the dopant-containing monolayer. The MLCD process does not involve formation and removal of SiO(2) capping layer, allowing utilization of surface chemistry details for tuning and simplifying the doping process. Surface contact doping of intrinsic Si wafers (i-Si) and intrinsic silicon nanowires (i-SiNWs) is demonstrated and characterized. Nanowire devices were formed using the i-SiNW channel and contact doped using the MLCD process, yielding highly doped SiNWs. Kelvin probe force microscopy (KPFM) was used to measure the longitudinal dopant distribution of the SiNWs and demonstrated highly uniform distribution in comparison with in situ doped wires. The MLCD process was studied for i-Si substrates with native oxide and H-terminated surface for three types of phosphorus-containing molecules. Sheet resistance measurements reveal the dependency of the doping process on the details of the surface chemistry used and relation to the different chemical environments of the P═O group. Characterization of the thermal decomposition of several monolayer types formed on SiO(2) nanoparticles (NPs) using TGA and XPS provides insight regarding the role of phosphorus surface chemistry at the SiO(2) interface in the overall MLCD process. The new MLCD process presented here for controlled surface doping

  12. Meteoritic silicon carbide - Pristine material from carbon stars

    NASA Technical Reports Server (NTRS)

    Lewis, Roy S.; Amari, Sachiko; Anders, Edward

    1990-01-01

    All five gases in interstellar silicon carbide grains have grossly nonsolar isotopic and elemental abundances that vary with grain size but are strikingly similar to calculated values for the helium-burning shell of low-mass carbon stars. Apparently these grains formed in carbon-star envelopes, and were impregnated with noble gas ions from a stellar wind. Meteoritic SiC provides a detailed record of nuclear and chemical processes in carbon stars.

  13. Carbon Doping of Compound Semiconductor Epitaxial Layers Grown by Metalorganic Chemical Vapor Deposition Using Carbon Tetrachloride.

    NASA Astrophysics Data System (ADS)

    Cunningham, Brian Thomas

    1990-01-01

    A dilute mixture of CCl_4 in high purity H_2 has been used as a carbon dopant source for rm Al_ {x}Ga_{1-x}As grown by low pressure metalorganic chemical vapor deposition (MOCVD). To understand the mechanism for carbon incorporation from CCl_4 doping and to provide experimental parameters for the growth of carbon doped device structures, the effects of various crystal growth parameters on CCl _4 doping have been studied, including growth temperature, growth rate, V/III ratio, Al composition, and CCl_4 flow rate. Although CCl _4 is an effective p-type dopant for MOCVD rm Al_{x}Ga_ {1-x}As, injection of CCl_4 into the reactor during growth of InP resulted in no change in the carrier concentration or carbon concentration. Abrupt, heavy carbon doping spikes in GaAs have been obtained using CCl_4 without a dopant memory effect. By annealing samples with carbon doping spikes grown within undoped, n-type, and p-type GaAs, the carbon diffusion coefficient in GaAs at 825 ^circC has been estimated and has been found to depend strongly on the GaAs background doping. Heavily carbon doped rm Al_{x}Ga _{1-x}As/GaAs superlattices have been found to be more stable against impurity induced layer disordering (IILD) than Mg or Zn doped superlattices, indicating that the low carbon diffusion coefficient limits the IILD process. Carbon doping has been used in the base region on an Npn AlGaAs/GaAs heterojunction bipolar transistor (HBT). Transistors with 3 x 10 μm self-aligned emitter fingers have been fabricated which exhibit a current gain cutoff frequency of f_ {rm t} = 26 GHz.

  14. Strain relief via silicon self-interstitial emission in highly boron-doped silicon: A diffuse X-ray scattering study of oxygen precipitation

    NASA Astrophysics Data System (ADS)

    Bergmann, Christoph; Gröschel, Alexander; Will, Johannes; Magerl, Andreas

    2015-07-01

    Oxygen precipitation in highly boron-doped Czochralski silicon (5 mΩ cm resistivity) was studied, and a strain-relieving mechanism involving the emission of silicon interstitial atoms (ISi) was identified. Strain-sensitive X-ray diffraction was employed, and through a comparison with complementary electron microscopy measurements a linear misfit strain ɛ=0.01 was determined. Different behavior concerning strain relaxation was measured for wafer-type samples (760 μm thickness) and thick samples (2 mm thickness), which was explained with out-diffusion of ISi in the thinner samples. Based on the experimental findings, a model was developed which invokes an increase in the solubility of interstitial silicon atoms upon boron doping. The model successfully accounts for different effects of boron doping on oxygen precipitation in silicon, which were reported on in literature such as preferential octahedral morphology of precipitates, enhanced nucleation, and relaxed accommodation of the precipitates with respect to the silicon lattice.

  15. Doped carbon nanostructure field emitter arrays for infrared imaging

    DOEpatents

    Korsah, Kofi [Knoxville, TN; Baylor, Larry R [Farragut, TN; Caughman, John B [Oak Ridge, TN; Kisner, Roger A [Knoxville, TN; Rack, Philip D [Knoxville, TN; Ivanov, Ilia N [Knoxville, TN

    2009-10-27

    An infrared imaging device and method for making infrared detector(s) having at least one anode, at least one cathode with a substrate electrically connected to a plurality of doped carbon nanostructures; and bias circuitry for applying an electric field between the anode and the cathode such that when infrared photons are adsorbed by the nanostructures the emitted field current is modulated. The detectors can be doped with cesium to lower the work function.

  16. Growth mechanism of silicon carbide films on silicon substrates using C 60 carbonization

    NASA Astrophysics Data System (ADS)

    Chen, Dong; Workman, Richard; Sarid, Dror

    1995-12-01

    Silicon carbide films were grown on silicon substrates using C 60 molecules as a carbon source. The grown films were characterized by atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and infrared spectroscopy (IRS). Also, using SiO 2 as a mask on the Si substrate, a patterned SiC film was grown. Growth and defect mechanisms are discussed and compared with conventional CVD carbidizing methods.

  17. Synthesis of silicon carbide at room temperature from colloidal suspensions of silicon dioxide and carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Zhukalin, D. A.; Tuchin, A. V.; Kulikova, T. V.; Bityutskaya, L. A.

    2015-11-01

    Experimental and theoretical approaches were used for the investigation of mechanisms and conditions of self-organized nanostructures formation in the drying drop of the mixture of colloidal suspensions of nanoscale amorphous silicon dioxide and carbon nanotubes. The formation of rodlike structures with diameter 250-300nm and length ∼4pm was revealed. The diffraction analysis of the obtained nanostructures showed the formation of the silicon carbide phase at room temperature.

  18. Electronic Transport in Phosphorus-Doped Silicon Nanocrystal Networks

    NASA Astrophysics Data System (ADS)

    Stegner, A. R.; Pereira, R. N.; Klein, K.; Lechner, R.; Dietmueller, R.; Brandt, M. S.; Stutzmann, M.; Wiggers, H.

    2008-01-01

    We have investigated the role of doping and paramagnetic states on the electronic transport of networks assembled from freestanding Si nanocrystals (Si-NCs). Electrically detected magnetic resonance (EDMR) studies on Si-NCs films, which show a strong increase of conductivity with doping of individual Si-NCs, reveal that P donors and Si dangling bonds contribute to dark conductivity via spin-dependent hopping, whereas in photoconductivity, these states act as spin-dependent recombination centers of photogenerated electrons and holes. Comparison between EDMR and conventional electron paramagnetic resonance shows that different subsets of P-doped nanocrystals contribute to the different transport processes.

  19. Electronic transport in phosphorus-doped silicon nanocrystal networks.

    PubMed

    Stegner, A R; Pereira, R N; Klein, K; Lechner, R; Dietmueller, R; Brandt, M S; Stutzmann, M; Wiggers, H

    2008-01-18

    We have investigated the role of doping and paramagnetic states on the electronic transport of networks assembled from freestanding Si nanocrystals (Si-NCs). Electrically detected magnetic resonance (EDMR) studies on Si-NCs films, which show a strong increase of conductivity with doping of individual Si-NCs, reveal that P donors and Si dangling bonds contribute to dark conductivity via spin-dependent hopping, whereas in photoconductivity, these states act as spin-dependent recombination centers of photogenerated electrons and holes. Comparison between EDMR and conventional electron paramagnetic resonance shows that different subsets of P-doped nanocrystals contribute to the different transport processes.

  20. Synthesis and characterization of discrete luminescent erbium-doped silicon nanocrystals

    SciTech Connect

    John, J.S.; Coffer, J.L.; Chen, Y.; Pinizzotto, R.F.

    1999-03-10

    The preparation of discrete erbium-doped silicon nanoparticles prepared by the co-pyrolysis of disilane and the volatile complex Er(tmhd){sub 3} (tmhd = 2,2,6,6-tetramethyl-3,5-heptanedionato) is described. The nanoparticles were characterized by transmission electron microscopy, selected area electron diffraction, X-ray dispersive spectroscopy, photoluminescence, and UV-visible absorption spectroscopies. Erbium-doped silicon nanoparticles possess a distinctive dark contrast in the transmission electron microscope, and the presence of erbium is confirmed by X-ray energy dispersive spectroscopy. The mean diameter of the nanoparticle aggregates can be shifted by altering the length of the pyrolysis oven employed. Characteristic Er{sup 3+} near-infrared photoluminescence at 1,540 nm is detected in these doped nanoparticles; preliminary excitation and power dependence measurements of this luminescence suggest a carrier-mediated emission mechanism.

  1. Large area and broadband ultra-black absorber using microstructured aluminum doped silicon films

    NASA Astrophysics Data System (ADS)

    Liu, Zhen; Liu, Hai; Wang, Xiaoyi; Yang, Haigui; Gao, Jinsong

    2017-02-01

    A large area and broadband ultra-black absorber based on microstructured aluminum (Al) doped silicon (Si) films prepared by a low-cost but very effective approach is presented. The average absorption of the absorber is greater than 99% within the wide range from 350 nm to 2000 nm, and its size reaches to 6 inches. We investigate the fabrication mechanism of the absorber and find that the Al atom doped in silicon improves the formation of the nanocone-like microstructures on the film surface, resulting in a significant decrease in the reflection of incident light. The absorption mechanism is further discussed by experiments and simulated calculations in detail. The results show that the doped Al atoms and Mie resonance formed in the microstructures contribute the broadband super-high absorption.

  2. Large area and broadband ultra-black absorber using microstructured aluminum doped silicon films

    PubMed Central

    Liu, Zhen; Liu, Hai; Wang, Xiaoyi; Yang, Haigui; Gao, Jinsong

    2017-01-01

    A large area and broadband ultra-black absorber based on microstructured aluminum (Al) doped silicon (Si) films prepared by a low-cost but very effective approach is presented. The average absorption of the absorber is greater than 99% within the wide range from 350 nm to 2000 nm, and its size reaches to 6 inches. We investigate the fabrication mechanism of the absorber and find that the Al atom doped in silicon improves the formation of the nanocone-like microstructures on the film surface, resulting in a significant decrease in the reflection of incident light. The absorption mechanism is further discussed by experiments and simulated calculations in detail. The results show that the doped Al atoms and Mie resonance formed in the microstructures contribute the broadband super-high absorption. PMID:28202899

  3. Enhanced diffusion of boron by oxygen precipitation in heavily boron-doped silicon

    NASA Astrophysics Data System (ADS)

    Torigoe, Kazuhisa; Ono, Toshiaki

    2017-06-01

    The enhanced diffusion of boron has been investigated by analyzing out-diffusion profiles in the vicinity of the interface between a lightly boron-doped silicon epitaxial layer and a heavily boron-doped silicon substrate with a resistivity of 8.2 mΩ cm and an oxide precipitate (O.P.) density of 108-1010 cm-3. It is found that the boron diffusion during annealing at 850-1000 °C is enhanced with the increase of the oxide precipitate density. On the basis of a model for boron diffusion mediated by silicon self-interstitials, we reveal that the enhanced diffusion is attributed to self-interstitials supersaturated as a result of the emission from oxide precipitates and the absorption by punched-out dislocations. In addition, the temperature dependence of the fraction of the self-interstitial emission obtained analyzing the diffusion enhancement well explains the morphology changes of oxide precipitates reported in literature.

  4. Reactive Infiltration of Silicon Melt Through Microporous Amorphous Carbon Preforms

    NASA Technical Reports Server (NTRS)

    Sangsuwan, P.; Tewari, S. N.; Gatica, J. E.; Singh, M.; Dickerson, R.

    1999-01-01

    The kinetics of unidirectional capillary infiltration of silicon melt into microporous carbon preforms have been investigated as a function of the pore morphology and melt temperature. The infiltrated specimens showed alternating bands of dark and bright regions, which corresponded to the unreacted free carbon and free silicon regions, respectively. The decrease in the infiltration front velocity for increasing infiltration distances, is in qualitative agreement with the closed-form solution of capillarity driven fluid flow through constant cross section cylindrical pores. However, drastic changes in the thermal response and infiltration front morphologies were observed for minute differences in the preforms microstructure. This suggests the need for a dynamic percolation model that would account for the exothermic nature of the silicon-carbon chemical reaction and the associated pore closing phenomenon.

  5. Observation of a photoinduced, resonant tunneling effect in a carbon nanotube–silicon heterojunction

    PubMed Central

    Ambrosio, Antonio; Boscardin, Maurizio; Castrucci, Paola; Crivellari, Michele; Cilmo, Marco; De Crescenzi, Maurizio; De Nicola, Francesco; Fiandrini, Emanuele; Grossi, Valentina; Maddalena, Pasqualino; Passacantando, Maurizio; Santucci, Sandro; Scarselli, Manuela; Valentini, Antonio

    2015-01-01

    Summary A significant resonant tunneling effect has been observed under the 2.4 V junction threshold in a large area, carbon nanotube–silicon (CNT–Si) heterojunction obtained by growing a continuous layer of multiwall carbon nanotubes on an n-doped silicon substrate. The multiwall carbon nanostructures were grown by a chemical vapor deposition (CVD) technique on a 60 nm thick, silicon nitride layer, deposited on an n-type Si substrate. The heterojunction characteristics were intensively studied on different substrates, resulting in high photoresponsivity with a large reverse photocurrent plateau. In this paper, we report on the photoresponsivity characteristics of the device, the heterojunction threshold and the tunnel-like effect observed as a function of applied voltage and excitation wavelength. The experiments are performed in the near-ultraviolet to near-infrared wavelength range. The high conversion efficiency of light radiation into photoelectrons observed with the presented layout allows the device to be used as a large area photodetector with very low, intrinsic dark current and noise. PMID:25821710

  6. Electronic level scheme in boron- and phosphorus-doped silicon nanowires.

    PubMed

    Sato, Keisuke; Castaldini, Antonio; Fukata, Naoki; Cavallini, Anna

    2012-06-13

    We report the first observation of the electronic level scheme in boron (B)- and phosphorus (P)-doped nanowires (NWs). The NWs' morphology dramatically depends on the doping impurity while a few deep electronic levels appear in both kinds of nanowires, independently of the doping type. We demonstrate that the doping impurities induce the same shallow levels as in bulk silicon. The presence of two donor levels in the lower half-bandgap is also revealed. In both kinds of NWs, B- and P-doped, the donor level (0/+) at E(v) + 0.36 eV of the gold-hydrogen complex is observed. This means that the gold diffusion from the NW tip introduces an electronically active level, which might negatively affects the electrical characteristics of the NWs. In P-doped NWs, we observed a further donor level at 0.26 eV above the valence band due to the phosphorus-vacancy pairs, the E-center, well-known in bulk silicon. These findings seriously question both diffusion modeling of impurities in NWs and the technological aspects arising from this.

  7. Thermodynamics of a phase transition of silicon nanoparticles at the annealing and carbonization of porous silicon

    SciTech Connect

    Nagornov, Yu. S.

    2015-12-15

    The formation of SiC nanocrystals of the cubic modification in the process of high-temperature carbonization of porous silicon has been analyzed. A thermodynamic model has been proposed to describe the experimental data obtained by atomic-force microscopy, Raman scattering, spectral analysis, Auger spectroscopy, and X-ray diffraction spectroscopy. It has been shown that the surface energy of silicon nanoparticles and quantum filaments is released in the process of annealing and carbonization. The Monte Carlo simulation has shown that the released energy makes it possible to overcome the nucleation barrier and to form SiC nanocrystals. The processes of laser annealing and electron irradiation of carbonized porous silicon have been analyzed.

  8. Characterization of boron doped diamond-like carbon film by HRTEM

    NASA Astrophysics Data System (ADS)

    Li, X. J.; He, L. L.; Li, Y. S.; Yang, Q.; Hirose, A.

    2015-12-01

    Boron doped diamond-like carbon (B-DLC) film was synthesized on silicon (1 0 0) wafer by biased target ion beam deposition. High-resolution transmission electron microscopy (HRTEM) is employed to investigate the microstructure of the B-DLC thin film in cross-sectional observation. Many crystalline nanoparticles randomly dispersed and embedded in the amorphous matrix film are observed. Through chemical compositional analysis of the B-DLC film, some amount of O element is confirmed to be contained. And also, some nanoparticles with near zone axes are indexed, which are accordance with B2O phase. Therefore, the contained O element causing the B element oxidized is proposed, resulting in the formation of the nanoparticles. Our work indicates that in the B-DLC film a significant amount of the doped B element exists as boron suboxide nanoparticles.

  9. Thermal conductivity improvement of silicone elastomer with carbon nanotube loading

    NASA Astrophysics Data System (ADS)

    Liu, C. H.; Huang, H.; Wu, Y.; Fan, S. S.

    2004-05-01

    Unpurified carbon nanotubes were introduced to silicone elastomer to investigate their effect on the thermal conductivity. Microstructure studies by a scanning electron microscope showed that the carbon nanotubes (CNTs) can be well dispersed in the matrix by the grinding method. No notable agglomerates or phase separation between the carbon and silicone matrix were observed, and the CNTs were individually in random orientation. The thermal conductivities of the composites were measured with the ASTM (American Society of Testing Materials) D5470 method. The thermal conductivities κ were found to increase with the carbon amount. There was a 65% enhancement in κ with 3.8 wt % CNT loading. The enhancement by equal loading of carbon black was found to be a little lower than that by the CNT loading. The composites loaded with CNTs displayed an abrupt increase in the electrical conductivity.

  10. Measurement of carrier transport and recombination parameter in heavily doped silicon

    NASA Technical Reports Server (NTRS)

    Swanson, Richard M.

    1986-01-01

    The minority carrier transport and recombination parameters in heavily doped bulk silicon were measured. Both Si:P and Si:B with bulk dopings from 10 to the 17th and 10 to the 20th power/cu cm were studied. It is shown that three parameters characterize transport in bulk heavily doped Si: the minority carrier lifetime tau, the minority carrier mobility mu, and the equilibrium minority carrier density of n sub 0 and p sub 0 (in p-type and n-type Si respectively.) However, dc current-voltage measurements can never measure all three of these parameters, and some ac or time-transient experiment is required to obtain the values of these parameters as a function of dopant density. Using both dc electrical measurements on bipolar transitors with heavily doped base regions and transients optical measurements on heavily doped bulk and epitaxially grown samples, lifetime, mobility, and bandgap narrowing were measured as a function of both p and n type dopant densities. Best fits of minority carrier mobility, bandgap narrowing and lifetime as a function of doping density (in the heavily doped range) were constructed to allow accurate modeling of minority carrier transport in heavily doped Si.

  11. Large magnetoresistance effect in nitrogen-doped silicon

    NASA Astrophysics Data System (ADS)

    Wang, Tao; Yang, Zhaolong; Wang, Wei; Si, Mingsu; Yang, Dezheng; Liu, Huiping; Xue, Desheng

    2017-05-01

    In this work, we reported a large magnetoresistance effect in silicon by ion implantation of nitrogen atoms. At room temperature, the magnetoresistance of silicon reaches 125 % under magnetic field 1.7 T and voltage bias -80 V. By applying an alternating magnetic field with a frequency (f) of 0.008 Hz, we find that the magnetoresistance of silicon is divided into f and 2f two signal components, which represent the linear and quadratic magnetoresistance effects, respectively. The analysis based on tuning the magnetic field and the voltage bias reveals that electric-field-induced space-charge effect plays an important role to enhance both the linear and quadratic magnetoresistance effects. Observation as well as a comprehensive explanation of large MR in silicon, especially based on semiconductor CMOS implantation technology, will be an important progress towards magnetoelectronic applications.

  12. Investigation of silicon complexes in Si-doped calcium phosphate bioceramics

    NASA Astrophysics Data System (ADS)

    Gillespie, P.; Stott, M. J.; Sayer, M.; Wu, G.

    2007-03-01

    Silicon doped calcium phosphate materials have drawn great interest as bioceramics for bone repair due to their enhanced bioactivity. However, the low level of doping in these materials, generally ˜1 wt.%, makes it difficult to determine the effects the silicon has on the structure of these materials. In this study, silicon substituted hydroxyapatite (Si-HA), silicon stabilized alpha tricalcium phosphate (Si-TCP), and a multi-phase mixture consisting of approximately 75% Si-TCP with the remainder being mainly Si-HA have been synthesized using isotopically enriched silica containing ^29Si. ^29Si magic-angle spinning nuclear magnetic resonance spectroscopy (MAS-NMR) has been used to examine the silicon complexes within these materials resulting from the substitution of SiO4^4- for PO4^3- and the required charge compensation mechanism needed to achieve this. Previous ab initio studies on these materials have investigated charge compensation mechanisms to suggest possible silicon complexes and these serve as a basis for interpreting the NMR results.

  13. Carbon--silicon coating alloys for improved irradiation stability

    DOEpatents

    Bokros, J.C.

    1973-10-01

    For ceramic nuclear fuel particles, a fission product-retaining carbon-- silicon alloy coating is described that exhibits low shrinkage after exposure to fast neutron fluences of 1.4 to 4.8 x 10/sup 21/ n/cm/sup 2/ (E = 0.18 MeV) at irradiation temperatures from 950 to 1250 deg C. Isotropic pyrolytic carbon containing from 18 to 34 wt% silicon is co-deposited from a gaseous mixiure of propane, helium, and silane at a temperature of 1350 to 1450 deg C. (Official Gazette)

  14. Effects of silicon nanostructure evolution on Er{sup 3+} luminescence in silicon-rich silicon oxide/Er-doped silica multilayers

    SciTech Connect

    Chang, Jee Soo; Jhe, Ji-Hong; Yang, Moon-Seung; Shin, Jung H.; Kim, Kyung Joong; Moon, Dae Won

    2006-10-30

    The effect of silicon nanostructure evolution on Er{sup 3+} luminescence is investigated by using multilayers of 2.5 nm thin SiO{sub x} (x<2) and 10 nm thin Er-doped silica (SiO{sub 2}:Er). By separating excess Si and Er atoms into separate, nanometer-thin layers, the effect of silicon nanostructure evolution on np-Si sensitized Er{sup 3+} luminescence could be investigated while keeping the microscopic Er{sup 3+} environment the same. The authors find that while the presence of np-Si is necessary for efficient sensitization, the overall quality of np-Si layer has little effect on the Er{sup 3+} luminescence. On the other hand, intrusion of np-Si into Er-doped silica layers leads to deactivation of np-Si/Er{sup 3+} interaction, suggesting that there is a limit to excess Si and Er contents that can be used.

  15. Nanoscale Etching and Indentation of Silicon Surfaces with Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Dzegilenko, Fedor N.; Srivastava, Deepak; Saini, Subhash

    1998-01-01

    The possibility of nanolithography of silicon and germanium surfaces with bare carbon nanotube tips of scanning probe microscopy devices is considered with large scale classical molecular dynamics (MD) simulations employing Tersoff's reactive many-body potential for heteroatomic C/Si/Ge system. Lithography plays a key role in semiconductor manufacturing, and it is expected that future molecular and quantum electronic devices will be fabricated with nanolithographic and nanodeposition techniques. Carbon nanotubes, rolled up sheets of graphene made of carbon, are excellent candidates for use in nanolithography because they are extremely strong along axial direction and yet extremely elastic along radial direction. In the simulations, the interaction of a carbon nanotube tip with silicon surfaces is explored in two regimes. In the first scenario, the nanotubes barely touch the surface, while in the second they are pushed into the surface to make "nano holes". The first - gentle scenario mimics the nanotube-surface chemical reaction induced by the vertical mechanical manipulation of the nanotube. The second -digging - scenario intends to study the indentation profiles. The following results are reported in the two cases. In the first regime, depending on the surface impact site, two major outcomes outcomes are the selective removal of either a single surface atom or a surface dimer off the silicon surface. In the second regime, the indentation of a silicon substrate by the nanotube is observed. Upon the nanotube withdrawal, several surface silicon atoms are adsorbed at the tip of the nanotube causing significant rearrangements of atoms comprising the surface layer of the silicon substrate. The results are explained in terms of relative strength of C-C, C-Si, and Si-Si bonds. The proposed method is very robust and does not require applied voltage between the nanotube tips and the surface. The implications of the reported controllable etching and hole-creating for

  16. Nanoscale Etching and Indentation of Silicon Surfaces with Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Dzegilenko, Fedor N.; Srivastava, Deepak; Saini, Subhash

    1998-01-01

    The possibility of nanolithography of silicon and germanium surfaces with bare carbon nanotube tips of scanning probe microscopy devices is considered with large scale classical molecular dynamics (MD) simulations employing Tersoff's reactive many-body potential for heteroatomic C/Si/Ge system. Lithography plays a key role in semiconductor manufacturing, and it is expected that future molecular and quantum electronic devices will be fabricated with nanolithographic and nanodeposition techniques. Carbon nanotubes, rolled up sheets of graphene made of carbon, are excellent candidates for use in nanolithography because they are extremely strong along axial direction and yet extremely elastic along radial direction. In the simulations, the interaction of a carbon nanotube tip with silicon surfaces is explored in two regimes. In the first scenario, the nanotubes barely touch the surface, while in the second they are pushed into the surface to make "nano holes". The first - gentle scenario mimics the nanotube-surface chemical reaction induced by the vertical mechanical manipulation of the nanotube. The second -digging - scenario intends to study the indentation profiles. The following results are reported in the two cases. In the first regime, depending on the surface impact site, two major outcomes outcomes are the selective removal of either a single surface atom or a surface dimer off the silicon surface. In the second regime, the indentation of a silicon substrate by the nanotube is observed. Upon the nanotube withdrawal, several surface silicon atoms are adsorbed at the tip of the nanotube causing significant rearrangements of atoms comprising the surface layer of the silicon substrate. The results are explained in terms of relative strength of C-C, C-Si, and Si-Si bonds. The proposed method is very robust and does not require applied voltage between the nanotube tips and the surface. The implications of the reported controllable etching and hole-creating for

  17. NH3 molecular doping of silicon nanowires grown along the [112], [110], [001], and [111] orientations

    PubMed Central

    2012-01-01

    The possibility that an adsorbed molecule could provide shallow electronic states that could be thermally excited has received less attention than substitutional impurities and could potentially have a high impact in the doping of silicon nanowires (SiNWs). We show that molecular-based ex-situ doping, where NH3 is adsorbed at the sidewall of the SiNW, can be an alternative path to n-type doping. By means of first-principle electronic structure calculations, we show that NH3 is a shallow donor regardless of the growth orientation of the SiNWs. Also, we discuss quantum confinement and its relation with the depth of the NH3 doping state, showing that the widening of the bandgap makes the molecular donor level deeper, thus more difficult to activate. PMID:22709657

  18. Electroless chemical grafting of nitrophenyl groups on n-doped hydrogenated amorphous silicon surfaces.

    PubMed

    Kim, Chulki; Oh, Kiwon; Han, Seunghee; Kim, Kyungkon; Kim, Il Won; Kim, Heesuk

    2014-08-01

    The direct spontaneous grafting of 4-nitrophenyl molecules onto n-doped hydrogenated amorphous silicon (a-Si:H) surfaces without external ultraviolet, thermal, or electrochemical energy was invegtigated. Clean n-doped a-Si:H thin films were dipped in a solution of 4-nitrobenzenediazonium salts (PNBD) in acetonitrile. After the modified surfaces were rinsed, they were analyzed qualitatively and quantitatively by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). XPS and AFM results show that the reaction of an n-doped a-Si:H thin film with PNBD self-terminates without polymerization, after 5 h, and the surface number density of 4-nitrophenyl molecules is 4.2 x 10(15)/cm2. These results demonstrate that the spontaneous grafting of nitrophenyl layers onto n-doped a-Si:H thin films is an attractive pathway toward forming interfaces between a-Si:H and organic layers under ambient conditions.

  19. Efficient oxygen reduction catalysts formed of cobalt phosphide nanoparticle decorated heteroatom-doped mesoporous carbon nanotubes.

    PubMed

    Chen, Kuiyong; Huang, Xiaobin; Wan, Chaoying; Liu, Hong

    2015-05-07

    Oxygen reduction catalysts based on heteroatom-doped mesoporous carbon nanotubes loaded with Co2P nanoparticles were skilfully fabricated. The electronic interaction between the embedded Co2P nanoparticles and the heteroatom-doped carbon structures could strongly promote the ORR catalytic performance of the heteroatom-doped carbon nanotubes.

  20. Microlasers based on high-Q rare-earth-doped aluminum oxide resonators on silicon (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Bradley, Jonathan D. B.; Su, Zhan; Frankis, Henry C.; Magden, Emir Salih; Li, Nanxi; Byrd, Matthew; Purnawirman, Purnawirman; Shah Hosseini, Ehsan; Adam, Thomas N.; Leake, Gerald; Coolbaugh, Douglas; Watts, Michael R.

    2017-02-01

    One of the key challenges in the field of silicon photonics remains the development of compact integrated light sources. In one approach, rare-earth-doped glass microtoroid and microdisk lasers have been integrated on silicon and exhibit ultra-low thresholds. However, such resonator structures are isolated on the chip surface and require an external fiber to couple light to and from the cavity. Here, we review our recent work on monolithically integrated rare-earth-doped aluminum oxide microcavity lasers on silicon. The microlasers are enabled by a novel high-Q cavity design, which includes a co-integrated silicon nitride bus waveguide and a silicon dioxide trench filled with rare-earth-doped aluminum oxide. In passive (undoped) microresonators we measure internal quality factors as high as 3.8 × 105 at 0.98 µm and 5.7 × 105 at 1.5 µm. In ytterbium, erbium, and thulium-doped microcavities with diameters ranging from 80 to 200 µm we show lasing at 1.0, 1.5 and 1.9 µm, respectively. We observe sub-milliwatt lasing thresholds, approximately 10 times lower than previously demonstrated in monolithic rare-earth-doped lasers on silicon. The entire fabrication process, which includes post-processing deposition of the gain medium, is silicon-compatible and allows for integration with other silicon-based photonic devices. Applications of such rare earth microlasers in communications and sensing and recent design enhancements will be discussed.

  1. Silicon Whisker and Carbon Nanofiber Composite Anode

    NASA Technical Reports Server (NTRS)

    Ma, Junqing (Inventor); Newman, Aron (Inventor); Lennhoff, John (Inventor)

    2015-01-01

    A carbon nanofiber can have a surface and include at least one crystalline whisker extending from the surface of the carbon nanofiber. A battery anode composition can be formed from a plurality of carbon nanofibers each including a plurality of crystalline whiskers.

  2. Formation of Carbon Nanostructures in Cobalt- and Nickel-Doped Carbon Aerogels

    SciTech Connect

    Fu, R; Baumann, T F; Cronin, S; Dresselhaus, G; Dresselhaus, M; Satcher, Jr., J H

    2004-11-09

    We have prepared carbon aerogels (CAs) doped with cobalt or nickel through sol-gel polymerization of formaldehyde with the potassium salt of 2,4-dihydroxybenzoic acid, followed by ion-exchange with M(NO{sub 3}){sub 2} (where M = Co{sup 2+} or Ni{sup 2+}), supercritical drying with liquid CO{sub 2} and carbonization at temperatures between 400 C and 1050 C under an N{sub 2} atmosphere. The nanostructures of these metal-doped carbon aerogels were characterized by elemental analysis, nitrogen adsorption, high resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). Metallic nickel and cobalt nanoparticles are generated during the carbonization process at about 400 C and 450 C, respectively, forming nanoparticles that are {approx}4 nm in diameter. The sizes and size dispersion of the metal particles increase with increasing carbonization temperatures for both materials. The carbon frameworks of the Ni- and Co-doped aerogels carbonized below 600 C mainly consist of interconnected carbon particles with a size of 15 to 30 nm. When the samples are pyrolyzed at 1050 C, the growth of graphitic nanoribbons with different curvatures is observed in the Ni and Co-doped carbon aerogel materials. The distance of graphite layers in the nanoribbons is about 0.38 nm. These metal-doped CAs retain the overall open cell structure of metal-free CAs, exhibiting high surface areas and pore diameters in the micro and mesoporic region.

  3. Urbach absorption edge in epitaxial erbium-doped silicon

    SciTech Connect

    Shmagin, V. B. Kudryavtsev, K. E.; Shengurov, D. V.; Krasilnik, Z. F.

    2015-02-07

    We investigate the dependencies of the photocurrent in Si:Er p-n junctions on the energy of the incident photons. The exponential absorption edge (Urbach edge) just below fundamental edge of silicon was observed in the absorption spectra of epitaxial Si:Er layers grown at 400–600 C. It is shown that the introduction of erbium significantly enhances the structural disorder in the silicon crystal which was estimated from the slope of the Urbach edge. We discuss the possible nature of the structural disorder in Si:Er and a new mechanism of erbium excitation, which does not require the presence of deep levels in the band gap of silicon.

  4. Radiation tolerance of boron doped dendritic web silicon solar cells

    NASA Technical Reports Server (NTRS)

    Rohatgi, A.

    1980-01-01

    The potential of dendritic web silicon for giving radiation hard solar cells is compared with the float zone silicon material. Solar cells with n(+)-p-P(+) structure and approximately 15% (AMl) efficiency were subjected to 1 MeV electron irradiation. Radiation tolerance of web cell efficiency was found to be at least as good as that of the float zone silicon cell. A study of the annealing behavior of radiation-induced defects via deep level transient spectroscopy revealed that E sub v + 0.31 eV defect, attributed to boron-oxygen-vacancy complex, is responsible for the reverse annealing of the irradiated cells in the temperature range of 150 to 350 C.

  5. Solid-Source Doping of Float-Zoned Silicon with B, N, O, and C: Preprint

    SciTech Connect

    Ciszek, T. F.

    2003-08-01

    We report on a solid-source method to introduce dopants or controlled impurities directly into the melt zone during float-zone growth of single- or multicrystalline ingots. Unlike the Czochralski (CZ) growth situation, float-zoning allows control over the levels of some impurities (O, C) that cannot be avoided in CZ growth or ingot casting. But aside from impurity studies, the method turns out to be very practical for routine p-type doping in semicontinuous growth processes such as float-zoning, electromagnetic casting, or melt-replenished ribbon growth. Equations governing dopant incorporation, dopant withdrawal, and N co-doping are presented and experimentally verified. Doping uniformity and doping initiation and withdrawal time constants are also reported. The method uses nontoxic source materials and is flexible with quick turnaround times for changing doping levels. Boron p-type doping with nitrogen co-doping is particularly attractive for silicon lattice strengthening against process-induced dislocation motion and also allows greater freedom from incorporation of Si self-interstitial cluster or A and B swirl-type defects and"D"-type microdefects than nitrogen-free p-type material.

  6. Formation mechanism of a silicon carbide coating for a reinforced carbon-carbon composite

    NASA Technical Reports Server (NTRS)

    Rogers, D. C.; Shuford, D. M.; Mueller, J. I.

    1975-01-01

    Results are presented for a study to determine the mechanisms involved in a high-temperature pack cementation process which provides a silicon carbide coating on a carbon-carbon composite. The process and materials used are physically and chemically analyzed. Possible reactions are evaluated using the results of these analytical data. The coating is believed to develop in two stages. The first is a liquid controlled phase process in which silicon carbide is formed due to reactions between molten silicon metal and the carbon. The second stage is a vapor transport controlled reaction in which silicon vapors react with the carbon. There is very little volume change associated with the coating process. The original thickness changes by less than 0.7%. This indicates that the coating process is one of reactive penetration. The coating thickness can be increased or decreased by varying the furnace cycle process time and/or temperature to provide a wide range of coating thicknesses.

  7. Low-temperature micro-photoluminescence spectroscopy on laser-doped silicon with different surface conditions

    NASA Astrophysics Data System (ADS)

    Han, Young-Joon; Franklin, Evan; Fell, Andreas; Ernst, Marco; Nguyen, Hieu T.; Macdonald, Daniel

    2016-04-01

    Low-temperature micro-photoluminescence spectroscopy (μ-PLS) is applied to investigate shallow layers of laser-processed silicon for solar cell applications. Micron-scale measurement (with spatial resolution down to 1 μm) enables investigation of the fundamental impact of laser processing on the electronic properties of silicon as a function of position within the laser-processed region, and in particular at specific positions such as at the boundary/edge of processed and unprocessed regions. Low-temperature μ-PLS enables qualitative analysis of laser-processed regions by identifying PLS signals corresponding to both laser-induced doping and laser-induced damage. We show that the position of particular luminescence peaks can be attributed to band-gap narrowing corresponding to different levels of subsurface laser doping, which is achieved via multiple 248 nm nanosecond excimer laser pulses with fluences in the range 1.5-4 J/cm2 and using commercially available boron-rich spin-on-dopant precursor films. We demonstrate that characteristic defect PL spectra can be observed subsequent to laser doping, providing evidence of laser-induced crystal damage. The impact of laser parameters such as fluence and number of repeat pulses on laser-induced damage is also analyzed by observing the relative level of defect PL spectra and absolute luminescence intensity. Luminescence owing to laser-induced damage is observed to be considerably larger at the boundaries of laser-doped regions than at the centers, highlighting the significant role of the edges of laser-doped region on laser doping quality. Furthermore, by comparing the damage signal observed after laser processing of two different substrate surface conditions (chemically-mechanically polished and tetramethylammonium hydroxide etched), we show that wafer preparation can be an important factor impacting the quality of laser-processed silicon and solar cells.

  8. Heavy doping effects in high efficiency silicon solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.; Neugroschel, A.; Landsberg, P. T.; San, C. T.

    1984-01-01

    A model for bandgap shrinkage in semiconductors is developed and applied to silicon. A survey of earlier experiments, and of new ones, give an agreement between the model and experiments on n- and p-type silicon which is good as far as transport measurements in the 300 K range. The discrepancies between theory and experiment are no worse than the discrepancies between the experimental results of various authors. It also gives a good account of recent, optical determinations of band gap shrinkage at 5 K.

  9. Iron-Doped Carbon Aerogels: Novel Porous Substrates for Direct Growth of Carbon Nanotubes

    DOE R&D Accomplishments Database

    Steiner, S. A.; Baumann, T. F.; Kong, J.; Satcher, J. H.; Dresselhaus, M. S.

    2007-02-20

    We present the synthesis and characterization of Fe-doped carbon aerogels (CAs) and demonstrate the ability to grow carbon nanotubes directly on monoliths of these materials to afford novel carbon aerogel-carbon nanotube composites. Preparation of the Fe-doped CAs begins with the sol-gel polymerization of the potassium salt of 2,4-dihydroxybenzoic acid with formaldehyde, affording K{sup +}-doped gels that can then be converted to Fe{sup 2+}- or Fe{sup 3+}-doped gels through an ion exchange process, dried with supercritical CO{sub 2} and subsequently carbonized under an inert atmosphere. Analysis of the Fe-doped CAs by TEM, XRD and XPS revealed that the doped iron species are reduced during carbonization to form metallic iron and iron carbide nanoparticles. The sizes and chemical composition of the reduced Fe species were related to pyrolysis temperature as well as the type of iron salt used in the ion exchange process. Raman spectroscopy and XRD analysis further reveal that, despite the presence of the Fe species, the CA framework is not significantly graphitized during pyrolysis. The Fe-doped CAs were subsequently placed in a thermal CVD reactor and exposed to a mixture of CH{sub 4} (1000 sccm), H{sub 2} (500 sccm), and C{sub 2}H{sub 4} (20 sccm) at temperatures ranging from 600 to 800 C for 10 minutes, resulting in direct growth of carbon nanotubes on the aerogel monoliths. Carbon nanotubes grown by this method appear to be multiwalled ({approx}25 nm in diameter and up to 4 mm long) and grow through a tip-growth mechanism that pushes catalytic iron particles out of the aerogel framework. The highest yield of CNTs were grown on Fe-doped CAs pyrolyzed at 800 C treated at CVD temperatures of 700 C.

  10. Iron-Doped Carbon Aerogels: Novel Porous Substrates for Direct Growth of Carbon Nanotubes

    SciTech Connect

    Steiner, S A; Baumann, T F; Kong, J; Satcher, J H; Dresselhaus, M S

    2007-02-15

    We present the synthesis and characterization of Fe-doped carbon aerogels (CAs) and demonstrate the ability to grow carbon nanotubes directly on monoliths of these materials to afford novel carbon aerogel-carbon nanotube composites. Preparation of the Fe-doped CAs begins with the sol-gel polymerization of the potassium salt of 2,4-dihydroxybenzoic acid with formaldehyde, affording K{sup +}-doped gels that can then be converted to Fe{sup 2+}- or Fe{sup 3+}-doped gels through an ion exchange process, dried with supercritical CO{sub 2} and subsequently carbonized under an inert atmosphere. Analysis of the Fe-doped CAs by TEM, XRD and XPS revealed that the doped iron species are reduced during carbonization to form metallic iron and iron carbide nanoparticles. The sizes and chemical composition of the reduced Fe species were related to pyrolysis temperature as well as the type of iron salt used in the ion exchange process. Raman spectroscopy and XRD analysis further reveal that, despite the presence of the Fe species, the CA framework is not significantly graphitized during pyrolysis. The Fe-doped CAs were subsequently placed in a thermal CVD reactor and exposed to a mixture of CH{sub 4} (1000 sccm), H{sub 2} (500 sccm), and C{sub 2}H{sub 4} (20 sccm) at temperatures ranging from 600 to 800 C for 10 minutes, resulting in direct growth of carbon nanotubes on the aerogel monoliths. Carbon nanotubes grown by this method appear to be multiwalled ({approx}25 nm in diameter and up to 4 mm long) and grow through a tip-growth mechanism that pushes catalytic iron particles out of the aerogel framework. The highest yield of CNTs were grown on Fe-doped CAs pyrolyzed at 800 C treated at CVD temperatures of 700 C.

  11. Directed evolution of cytochrome c for carbon-silicon bond formation: Bringing silicon to life.

    PubMed

    Kan, S B Jennifer; Lewis, Russell D; Chen, Kai; Arnold, Frances H

    2016-11-25

    Enzymes that catalyze carbon-silicon bond formation are unknown in nature, despite the natural abundance of both elements. Such enzymes would expand the catalytic repertoire of biology, enabling living systems to access chemical space previously only open to synthetic chemistry. We have discovered that heme proteins catalyze the formation of organosilicon compounds under physiological conditions via carbene insertion into silicon-hydrogen bonds. The reaction proceeds both in vitro and in vivo, accommodating a broad range of substrates with high chemo- and enantioselectivity. Using directed evolution, we enhanced the catalytic function of cytochrome c from Rhodothermus marinus to achieve more than 15-fold higher turnover than state-of-the-art synthetic catalysts. This carbon-silicon bond-forming biocatalyst offers an environmentally friendly and highly efficient route to producing enantiopure organosilicon molecules. Copyright © 2016, American Association for the Advancement of Science.

  12. Lightweight Ceramic Composition of Carbon Silicon Oxygen and Boron

    NASA Technical Reports Server (NTRS)

    Leiser, Daniel B. (Inventor); Hsu, Ming-Ta (Inventor); Chen, Timothy S. (Inventor)

    1997-01-01

    Lightweight, monolithic ceramics resistant to oxidation in air at high temperatures are made by impregnating a porous carbon preform with a sol which contains a mixture of tetraethoxysilane, dimethyldiethoxysilane and trimethyl borate. The sol is gelled and dried on the carbon preform to form a ceramic precursor. The precursor is pyrolyzed in an inert atmosphere to form the ceramic which is made of carbon, silicon, oxygen and boron. The carbon of the preform reacts with the dried gel during the pyrolysis to form a component of the resulting ceramic. The ceramic is of the same size, shape and form as the carbon precursor. Thus, using a porous, fibrous carbon precursor, such as a carbon felt, results in a porous, fibrous ceramic. Ceramics of the invention are useful as lightweight tiles for a reentry spacecraft.

  13. Erbium-doped silicon-oxycarbide materials for advanced optical waveguide amplifiers

    NASA Astrophysics Data System (ADS)

    Gallis, Spyros

    As a novel silicon based material, amorphous silicon oxycarbide (a-SiC xOyHz) has found many important applications (e.g. as a low-k material for interconnects) in Si microelectronics. This Ph.D. thesis work has explored another potential application of amorphous silicon oxycarbide: as a silicon-based host material for planar erbium-doped waveguide amplifiers (EDWAs) that operate at the telecommunications wavelength of 1540 nm. Such EDWAs are an important component of planar photonic integrated circuits being developed for implementation of the fiber-to-the-home (FTTH) technology. Furthermore, these Si-based EDWAs could be combined with other Si photonic devices (e.g. light sources, detectors, modulators) for achieving opto-electronic integration on Si chips, or silicon micro/nanophotonics. This thesis will start with basics about Er-doped systems and material challenges in the design of EDWAs. A detailed study of the structural and optical properties of a-SiCxOyHz materials under various deposition and processing conditions, concerning several aspects, such as thin film composition, chemical bonding, refractive index and optical gap, will be presented and discussed. Lastly, this work will focus on the photoluminescence (PL) properties of erbium-doped amorphous silicon oxycarbides (a-SiCxOyHz:Er). Results of both Er-related (near infrared ˜1540 nm) and matrix-related (visible) luminescence properties will be presented, and mechanisms leading to efficient excitation of Er ions in the materials will be discussed. This work indicates that a-SiC xOyHz:Er can be a promising matrix for realizing high-performance EDWAs using inexpensive broadband light sources.

  14. SiCO-doped carbon fibers with unique dual superhydrophilicity/superoleophilicity and ductile and capacitance properties.

    PubMed

    Lu, Ping; Huang, Qing; Mukherjee, Amiya; Hsieh, You-Lo

    2010-12-01

    Silicon oxycarbide (SiCO) glass-doped carbon fibers with an average diameter of 163 nm were successfully synthesized by electrospinning polymer mixtures of preceramic precursor polyureasilazane (PUS) and carbon precursor polyacrylonitrile (PAN) into fibers then converting to ceramic/carbon hybrid via cross-linking, stabilization, and pyrolysis at temperatures up to 1000 °C. The transformation of PUS/PAN polymer precursors to SiCO/carbon structures was confirmed by EDS and FTIR. Both carbon and SiCO/carbon fibers were amorphous and slightly oxidized. Doping with SiCO enhanced the thermal stability of carbon fibers and acquired new ductile behavior in the SiCO/carbon fibers with significantly improved flexibility and breaking elongation. Furthermore, the SiCO/carbon fibers exhibited dual superhydrophilicity and superoleophilicity with water and decane absorbing capacities of 873 and 608%, respectively. The cyclic voltammetry also showed that SiCO/carbon composite fibers possess better capacitor properties than carbon fibers.

  15. Influence of Grain Structure and Doping on the Deformation and Fracture of Polycrystalline Silicon for MEMS/NEMS

    DTIC Science & Technology

    2012-08-01

    Champaign Influence of Grain Structure and Doping on the Deformation and Fracture of Polycrystalline Silicon for MEMS /NEMS AFOSR Grant # FA9550-09-1...thin films for MEMS and mechanical properties under open and short circuit conditions: They were the first data of their kind and have drawn interest by industry too. ...Structure and Doping on the Deformation and Fracture of Polycrystalline Silicon for MEMS /NEMS 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM

  16. Electrical Properties of Nitrogen Doped Float Zone Silicon.

    DTIC Science & Technology

    1985-07-01

    examination from Shin - Etsu Handotai Co. throuqh Dr. T. Abe. The boule is typical of such material grown by Shin - Etsu and nitrogen doping was accomplished... Shin - Etsu FZ Nitrogen n 10 3 Handotai Hughes FZ residual p105 Aircraft Boron Monsanto CZ Phosphorus n 200 Monsanto CZ Phosphorus n 2.0 Several 3/8" x 3

  17. [Study on the absorption spectrum properties of flexible black silicon doped with sulfur and fluorine based on first-principles].

    PubMed

    Wei, Wei; Zhu, Yong; Lin, Cheng; Tian, Li; Xu, Zu-Wen; Nong, Jin-Peng

    2014-04-01

    It is quite urgent to need a flexible photodetector in the ultraviolet-visible-near infrared region for building a miniaturization broadband spectrometer. In the present paper, one kind of flexible black silicon doped with sulfur and fluorine was proposed and the optical absorption spectrum was investigated in broadband region. Firstly, the electronic structure, band structure and the optical absorption properties of the flexible black silicon doped with sulfur and fluoride were calculated using the first-principles pseudo potential calculations based on density-functional theory. Then, the absorption spectrum model of the flexible black silicon was built based on both the first-principles and finite domain time difference method. The results show that the cut-off wavelength has a red shift as the band gap of doped material becomes narrower. The higher the doping concentration is, the higher the optical absorption coefficient is obtained. The absorption coefficient of flexible black silicon doped with 50% sulfur is 8.3 times higher than that of 1.5% sulfur doping sample at the wavelength of 1 500 nm while the ratio turns to be 3 times when doped with 50% and 1.5% fluoride. The black silicon with small-size surface microstructure has the highest absorptance in the near-infrared region at the same doping concentration of 50%. Finally, a sample of flexible black silicon was fabricated by the femtosecond laser auto scanning system. The test results indicate that the absorptance of the sample is higher than 95% both in the ultraviolet and visible region and is fluctuated from 70% to 80% in the near-infrared region. It shows that as a novel light-absorbing material in broadband region the flexible black silicon doped with Sulfur and Fluorine has an potential application in exploring miniaturization broadband spectroscopy.

  18. The observation of structural defects in neutron-irradiated lithium-doped silicon solar cells

    NASA Technical Reports Server (NTRS)

    Sargent, G. A.

    1971-01-01

    Electron microscopy has been used to observe the distribution and morphology of lattice defects introduced into lithium-doped silicon solar cells by neutron irradiation. Upon etching the surface of the solar cells after irradiation, crater-like defects are observed that are thought to be associated with the space charge region around vacancy clusters. Thermal annealing experiments showed that the crater defects were stable in the temperature range 300 to 1200 K in all of the lithium-doped samples. Some annealing of the crater defects was observed to occur in the undoped cells which were irradiated at the lowest doses.

  19. The influence of edge effects on the determination of the doping profile of silicon pad diodes

    NASA Astrophysics Data System (ADS)

    Fretwurst, E.; Garutti, E.; Hufschmidt, M.; Klanner, R.; Kopsalis, I.; Schwandt, J.

    2017-09-01

    Edge effects for square p+ n pad diodes with guard rings, fabricated on high-ohmic silicon, are investigated. Using capacitance-voltage measurements of two pad diodes with different areas, the planar and the edge contributions to the diode capacitance are determined separately. It is found that the edge contributions are significant and that they strongly influence the determination of the doping concentration using capacitance-voltage measurements. After edge correction, the bulk doping of the pad diodes is found to be uniform within ± 1.5 %, which agrees with expectations. The edge-correction method is verified using TCAD simulations of two circular pad diodes with different radii.

  20. A MEMS Infrared Thermopile Fabricated from Silicon-On-Insulator with Phononic Crystal Structures and Carbon Nanotube Absorption Layer

    NASA Astrophysics Data System (ADS)

    Gray, Kory Forrest

    The goal of this project was to examine the possibility of creating a novel thermal infrared detector based on silicon CMOS technology that has been enhanced by the latest nano-engineering discoveries. Silicon typically is not thought as an e cient thermoelectric material. However recent advancements in nanotechnology have improved the potential for a highly sensitive infrared detector based on nano-structured silicon. The thermal conductivity of silicon has been shown to be reduced from 150 W/mK down to 60 W/mK just by decreasing the scale of the silicon from bulk down to the sub-micron scale. Further reduction of the thermal conductivity has been shown by patterning silicon with a phonon crystal structure which has been reported to have thermal conductivities down to 10 W/mK. The phonon crystal structure consists of a 2D array of holes that are etched into the silicon. The size and pitch of the holes are on the order of the mean free path of the phonons in silicon which is approximately 200-500nm. This particular device had 200nm holes on a 400nm pitch. The Seebeck coe cient of silicon can also be enhanced by the reduction of the material from the bulk to sub-micron scale and with degenerate level doping. The combination of decreased thermal conductivity and increased Seebeck coefficient allow silicon to be a promising material for thermoelectric infrared detectors. The highly doped silicon is desired to reduce the electrical resistance of the device. The low electrical resistance is required to reduce the Johnson noise of the device which is the dominant noise source for most thermal detectors. This project designed a MEMS thermopile using a silicon-on-insulator substrate, and a CMOS compatible process. The basic thermopile consists of a silicon dioxide membrane with phononic crystal patterned silicon thermocouples around the edges of the membrane. Vertical aligned, multi-walled, carbon nanotubes were used as the infrared absorption layer. A MEMS thermoelectric

  1. Microhardness of silicon doped with isovalent or rare-earth impurities

    SciTech Connect

    Brinkevich, D.I.; Vabishchevich, S.A.

    1994-05-01

    When large-diameter silicon ingots are used in the production of semiconductor devices, severe requirements are imposed for the mechanical strength of the wafers produced. A convenient parameter for evaluating the mechanical strength is microhardness. Below, the authors report on a study of the microhardness of Czochralski-grown and floating-zone-grown silicon (Cz-Si and FZ-Si, respectively) doped with Er, Dy, and Ge, and of Si{sub 1-x}Ge{sub x} (x = 0.01-0.14) alloys.

  2. Orbitronics: the Intrinsic Orbital Hall Effect in p-Doped Silicon

    SciTech Connect

    Bernevig, B.Andrei; Hughes, Taylor L.; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-01-15

    The spin Hall effect depends crucially on the intrinsic spin-orbit coupling of the energy band. Because of the smaller spin-orbit coupling in silicon, the spin Hall effect is expected to be much reduced. We show that the electric field in p-doped silicon can induce a dissipationless orbital current in a fashion reminiscent of the spin Hall effect. The vertex correction due to impurity scattering vanishes and the effect is therefore robust against disorder. The orbital Hall effect can lead to the accumulation of local orbital momentum at the edge of the sample, and can be detected by the Kerr effect.

  3. Design and burn-up analyses of new type holder for silicon neutron transmutation doping.

    PubMed

    Komeda, Masao; Arai, Masaji; Tamai, Kazuo; Kawasaki, Kozo

    2016-07-01

    We have developed a new silicon irradiation holder with a neutron filter to increase the irradiation efficiency. The neutron filter is made of an alloy of aluminum and B4C particles. We fabricated a new holder based on the results of design analyses. This filter has limited use in applications requiring prolonged use due to a decrease in the amount of (10)B in B4C particles. We investigated the influence of (10)B reduction on doping distribution in a silicon ingot by using the Monte Carlo Code MVP. Copyright © 2016 Elsevier Ltd. All rights reserved.

  4. 3D modeling of doping from the atmosphere in floating zone silicon crystal growth

    NASA Astrophysics Data System (ADS)

    Sabanskis, A.; Surovovs, K.; Virbulis, J.

    2017-01-01

    Three-dimensional numerical simulations of the inert gas flow, melt flow and dopant transport in both phases are carried out for silicon single crystal growth using the floating zone method. The mathematical model allows to predict the cooling heat flux density at silicon surfaces and realistically describes the dopant transport in case of doping from the atmosphere. A very good agreement with experiment is obtained for the radial resistivity variation profiles by taking into account the temperature dependence of chemical reaction processes at the free surface.

  5. Si doped T6 carbon structure as an anode material for Li-ion batteries: An ab initio study

    NASA Astrophysics Data System (ADS)

    Rajkamal, A.; Kumar, E. Mathan; Kathirvel, V.; Park, Noejung; Thapa, Ranjit

    2016-11-01

    First-principles calculations are performed to identify the pristine and Si doped 3D metallic T6 carbon structure (having both sp2 and sp3 type hybridization) as a new carbon based anode material. The π electron of C2 atoms (sp2 bonded) forms an out of plane network that helps to capture the Li atom. The highest Li storage capacity of Si doped T6 structure with conformation Li1.7Si1C5 produces theoretical specific capacity of 632 mAh/g which substantially exceeding than graphite. Also, open-circuit voltage (OCV) with respect to Li metal shows large negative when compared to the pristine T6 structure. This indicates modifications in terms of chemical properties are required in anode materials for practical application. Among various doped (Si, Ge, Sn, B, N) configuration, Si doped T6 structure provides a stable positive OCV for high Li concentrations. Likewise, volume expansion study also shows Si doped T6 structure is more stable with less pulverization and substantial capacity losses in comparison with graphite and silicon as an anode materials. Overall, mixed hybridized (sp2 + sp3) Si doped T6 structure can become a superior anode material than present sp2 hybridized graphite and sp3 hybridized Si structure for modern Lithium ion batteries.

  6. Si doped T6 carbon structure as an anode material for Li-ion batteries: An ab initio study

    PubMed Central

    Rajkamal, A.; Kumar, E. Mathan; Kathirvel, V.; Park, Noejung; Thapa, Ranjit

    2016-01-01

    First-principles calculations are performed to identify the pristine and Si doped 3D metallic T6 carbon structure (having both sp2 and sp3 type hybridization) as a new carbon based anode material. The π electron of C2 atoms (sp2 bonded) forms an out of plane network that helps to capture the Li atom. The highest Li storage capacity of Si doped T6 structure with conformation Li1.7Si1C5 produces theoretical specific capacity of 632 mAh/g which substantially exceeding than graphite. Also, open-circuit voltage (OCV) with respect to Li metal shows large negative when compared to the pristine T6 structure. This indicates modifications in terms of chemical properties are required in anode materials for practical application. Among various doped (Si, Ge, Sn, B, N) configuration, Si doped T6 structure provides a stable positive OCV for high Li concentrations. Likewise, volume expansion study also shows Si doped T6 structure is more stable with less pulverization and substantial capacity losses in comparison with graphite and silicon as an anode materials. Overall, mixed hybridized (sp2 + sp3) Si doped T6 structure can become a superior anode material than present sp2 hybridized graphite and sp3 hybridized Si structure for modern Lithium ion batteries. PMID:27892532

  7. A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires

    PubMed Central

    2012-01-01

    In this paper, a silicon-oxide-nitride-silicon nonvolatile memory constructed on an n+-poly-Si nanowire [NW] structure featuring a junctionless [JL] configuration is presented. The JL structure is fulfilled by employing only one in situ heavily phosphorous-doped poly-Si layer to simultaneously serve as source/drain regions and NW channels, thus greatly simplifying the manufacturing process and alleviating the requirement of precise control of the doping profile. Owing to the higher carrier concentration in the channel, the developed JL NW device exhibits significantly enhanced programming speed and larger memory window than its counterpart with conventional undoped-NW-channel. Moreover, it also displays acceptable erase and data retention properties. Hence, the desirable memory characteristics along with the much simplified fabrication process make the JL NW memory structure a promising candidate for future system-on-panel and three-dimensional ultrahigh density memory applications. PMID:22373446

  8. A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires.

    PubMed

    Su, Chun-Jung; Su, Tuan-Kai; Tsai, Tzu-I; Lin, Horng-Chih; Huang, Tiao-Yuan

    2012-02-29

    In this paper, a silicon-oxide-nitride-silicon nonvolatile memory constructed on an n+-poly-Si nanowire [NW] structure featuring a junctionless [JL] configuration is presented. The JL structure is fulfilled by employing only one in situ heavily phosphorous-doped poly-Si layer to simultaneously serve as source/drain regions and NW channels, thus greatly simplifying the manufacturing process and alleviating the requirement of precise control of the doping profile. Owing to the higher carrier concentration in the channel, the developed JL NW device exhibits significantly enhanced programming speed and larger memory window than its counterpart with conventional undoped-NW-channel. Moreover, it also displays acceptable erase and data retention properties. Hence, the desirable memory characteristics along with the much simplified fabrication process make the JL NW memory structure a promising candidate for future system-on-panel and three-dimensional ultrahigh density memory applications.

  9. Hypervalent surface interactions for colloidal stability and doping of silicon nanocrystals

    PubMed Central

    Wheeler, Lance M.; Neale, Nathan R.; Chen, Ting; Kortshagen, Uwe R.

    2013-01-01

    Colloidal semiconductor nanocrystals have attracted attention for cost-effective, solution-based deposition of quantum-confined thin films for optoelectronics. However, two significant challenges must be addressed before practical nanocrystal-based devices can be realized. The first is coping with the ligands that terminate the nanocrystal surfaces. Though ligands provide the colloidal stability needed to cast thin films from solution, these ligands dramatically hinder charge carrier transport in the resulting film. Second, after a conductive film is achieved, doping has proven difficult for further control of the optoelectronic properties of the film. Here we report the ability to confront both of these challenges by exploiting the ability of silicon to engage in hypervalent interactions with hard donor molecules. For the first time, we demonstrate the significant potential of applying the interaction to the nanocrystal surface. In this study, hypervalent interactions are shown to provide colloidal stability as well as doping of silicon nanocrystals. PMID:23893292

  10. Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E. (Inventor); Grunthaner, Paula J. (Inventor); Grunthaner, Frank J. (Inventor); Terhune, Robert W. (Inventor); Hecht, Michael H. (Inventor)

    1994-01-01

    The backside surface potential well of a backside-illuminated CCD is confined to within about half a nanometer of the surface by using molecular beam epitaxy (MBE) to grow a delta-doped silicon layer on the back surface. Delta-doping in an MBE process is achieved by temporarily interrupting the evaporated silicon source during MBE growth without interrupting the evaporated p+ dopant source (e.g., boron). This produces an extremely sharp dopant profile in which the dopant is confined to only a few atomic layers, creating an electric field high enough to confine the backside surface potential well to within half a nanometer of the surface. Because the probability of UV-generated electrons being trapped by such a narrow potential well is low, the internal quantum efficiency of the CCD is nearly 100% throughout the UV wavelength range. Furthermore, the quantum efficiency is quite stable.

  11. DLTS and PL studies of proton radiation defects in tin-doped FZ silicon

    NASA Astrophysics Data System (ADS)

    Simoen, E.; Claeys, C.; Privitera, V.; Coffa, S.; Kokkoris, M.; Kossionides, E.; Fanourakis, G.; Nylandsted Larsen, A.; Clauws, P.

    2002-01-01

    In this paper, deep level transient spectroscopy (DLTS) is applied to study the deep levels in tin-doped and high-energy proton irradiated n-type float-zone (FZ) silicon. The results will be compared with irradiated tin-free FZ reference material, in order to evaluate the hardening potential. It will be shown that in Sn-doped silicon (FZ:Sn), a number of additional deep levels can be observed, two of which have been identified as acceptors associated with Sn-V. Furthermore, optically active recombination centres have been probed by photoluminescence (PL) spectroscopy. The PL results confirm the reduction of electrically active radiation-defect formation in FZ:Sn. At the same time, no Sn-related optically active centres have been found so far.

  12. Nitrogen-Doped Carbon Fiber Paper by Active Screen Plasma Nitriding and Its Microwave Heating Properties.

    PubMed

    Zhu, Naishu; Ma, Shining; Sun, Xiaofeng

    2016-12-28

    In this paper, active screen plasma nitriding (ASPN) treatment was performed on polyacrylonitrile carbon fiber papers. Electric resistivity and microwave loss factor of carbon fiber were described to establish the relationship between processing parameters and fiber's ability to absorb microwaves. The surface processing effect of carbon fiber could be characterized by dynamic thermal mechanical analyzer testing on composites made of carbon fiber. When the process temperature was at 175 °C, it was conducive to obtaining good performance of dynamical mechanical properties. The treatment provided a way to change microwave heating properties of carbon fiber paper by performing different treatment conditions, such as temperature and time parameters. Atomic force microscope, scanning electron microscope, and X-ray photoelectron spectroscopy analysis showed that, during the course of ASPN treatment on carbon fiber paper, nitrogen group was introduced and silicon group was removed. The treatment of nitrogen-doped carbon fiber paper represented an alternative promising candidate for microwave curing materials used in repairing and heating technology, furthermore, an efficient dielectric layer material for radar-absorbing structure composite in metamaterial technology.

  13. Imaging doped silicon test structures using low energy electron microscopy.

    SciTech Connect

    Nakakura, Craig Yoshimi; Anderson, Meredith Lynn; Kellogg, Gary Lee

    2010-01-01

    This document is the final SAND Report for the LDRD Project 105877 - 'Novel Diagnostic for Advanced Measurements of Semiconductor Devices Exposed to Adverse Environments' - funded through the Nanoscience to Microsystems investment area. Along with the continuous decrease in the feature size of semiconductor device structures comes a growing need for inspection tools with high spatial resolution and high sample throughput. Ideally, such tools should be able to characterize both the surface morphology and local conductivity associated with the structures. The imaging capabilities and wide availability of scanning electron microscopes (SEMs) make them an obvious choice for imaging device structures. Dopant contrast from pn junctions using secondary electrons in the SEM was first reported in 1967 and more recently starting in the mid-1990s. However, the serial acquisition process associated with scanning techniques places limits on the sample throughput. Significantly improved throughput is possible with the use of a parallel imaging scheme such as that found in photoelectron emission microscopy (PEEM) and low energy electron microscopy (LEEM). The application of PEEM and LEEM to device structures relies on contrast mechanisms that distinguish differences in dopant type and concentration. Interestingly, one of the first applications of PEEM was a study of the doping of semiconductors, which showed that the PEEM contrast was very sensitive to the doping level and that dopant concentrations as low as 10{sup 16} cm{sup -3} could be detected. More recent PEEM investigations of Schottky contacts were reported in the late 1990s by Giesen et al., followed by a series of papers in the early 2000s addressing doping contrast in PEEM by Ballarotto and co-workers and Frank and co-workers. In contrast to PEEM, comparatively little has been done to identify contrast mechanisms and assess the capabilities of LEEM for imaging semiconductor device strictures. The one exception is the

  14. Synthesize of N-doped Carbon nanotube according to gas flow rate by Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Kim, J. B.; Kim, C. D.; Kong, S. J.; Kim, J. H.; Min, B. K.; Jung, W. S.; Lee, H. R.

    2011-12-01

    Nitrogen-doped (N-doped) Carbon nanotubes (CNTs) have been prepared by Thermal Chemical Vapor Deposition (CVD). As doping accompanies with the recombination of carbon atoms into CNTs in the CVD process, N atoms can be substitutionally doped into the CNTs lattice, which is hard to realize by other synthetic methods. The synthesis technique and the characteristic analysis of N-doped CNT will move up the industrialization and the basic study of CNT. We will elucidate the basic properties of CNT such as the structural characteristics of the N-doped CNT material and study for the industrial application of the N-doped CNTs to the electrode of fuel cell.

  15. Lithium Ion Battery Performance of Silicon Nanowires With Carbon Skin

    SciTech Connect

    Bogart, Timothy D.; Oka, Daichi; Lu, Xiaotang; Gu, Meng; Wang, Chong M.; Korgel, Brian A.

    2013-12-06

    Silicon (Si) nanomaterials have emerged as a leading candidate for next generation lithium-ion battery anodes. However, the low electrical conductivity of Si requires the use of conductive additives in the anode film. Here we report a solution-based synthesis of Si nanowires with a conductive carbon skin. Without any conductive additive, the Si nanowire electrodes exhibited capacities of over 2000 mA h g-1 for 100 cycles when cycled at C/10 and over 1200 mA h g-1 when cycled more rapidly at 1C against Li metal.. In situ transmission electron microscopy (TEM) observation reveals that the carbon skin performs dual roles: it speeds lithiation of the Si nanowires significantly, while also constraining the final volume expansion. The present work sheds light on ways to optimize lithium battery performance by smartly tailoring the nanostructure of composition of materials based on silicon and carbon.

  16. Lithium ion battery peformance of silicon nanowires with carbon skin.

    PubMed

    Bogart, Timothy D; Oka, Daichi; Lu, Xiaotang; Gu, Meng; Wang, Chongmin; Korgel, Brian A

    2014-01-28

    Silicon (Si) nanomaterials have emerged as a leading candidate for next generation lithium-ion battery anodes. However, the low electrical conductivity of Si requires the use of conductive additives in the anode film. Here we report a solution-based synthesis of Si nanowires with a conductive carbon skin. Without any conductive additive, the Si nanowire electrodes exhibited capacities of over 2000 mA h g(-1) for 100 cycles when cycled at C/10 and over 1200 mA h g(-1) when cycled more rapidly at 1C against Li metal. In situ transmission electron microscopy (TEM) observation reveals that the carbon skin performs dual roles: it speeds lithiation of the Si nanowires significantly, while also constraining the final volume expansion. The present work sheds light on ways to optimize lithium battery performance by smartly tailoring the nanostructure of composition of materials based on silicon and carbon.

  17. Gap narrowing in charged and doped silicon nanoclusters

    NASA Astrophysics Data System (ADS)

    Titov, Andrey; Michelini, Fabienne; Raymond, Laurent; Kulatov, Erkin; Uspenskii, Yurii A.

    2010-12-01

    The gap narrowing in charged Si35H36 and n -type doped Si34DH36 ( D=P , As, Sb, S, Se, and Te) clusters is studied within the GW approximation, including energy dependence of the dielectric matrix and local-field effects. It is shown that the density functional theory does not properly describe the gap narrowing in clusters, as it was found earlier in bulk Si. The main mechanisms of this effect in clusters are the same as in bulk Si: (i) the screened exchange interaction between additional electrons and (ii) the extra screening of the Coulomb interaction by additional electrons. At the same time, our calculations show that the carrier-induced gap narrowing has peculiar features in the clusters. A much weaker screening of the electron-electron interaction strongly increases the first and decreases the second mechanism of gap narrowing in Si clusters as compared to bulk Si. We find also that the gap-narrowing effect is more pronounced in doped clusters than in charged ones due to the charge localization near impurity ions. The electronic spectrum of the charged and doped Si clusters with one electron is spin split. The local-density approximation calculation greatly underestimates the value of the spin splitting. A calculation performed with the screened Hartree-Fock method shows that the splitting is large. It considerably narrows the gap and brings important spin effects into cluster properties.

  18. Free-carrier absorption from Fibonacci sequences of. delta. -doped layers in silicon

    SciTech Connect

    Sernelius, B.E. Department of Physics, University of Tennessee, Knoxville, Tennessee 37996 Department of Physics and Measurement Technology, University of Linkoping, S-58183 Linkoping, Sweden)

    1989-09-15

    Theoretical results are reported for the dynamical resistivity and free-carrier absorption from Fibonacci sequences of {delta}-doped layers in silicon. Distinct peaks develop, with increasing generation number, in the region of plasmon excitations and the spectra show self-similarity properties. Numerical results are presented for sequences with generation numbers 5, 10, and 15, corresponding to a total number of layers approximately equal to 10, 100, and 1000, respectively.

  19. Fracture of flash oxidized, yttria-doped sintered reaction-bonded silicon nitride

    NASA Technical Reports Server (NTRS)

    Govila, R. K.

    1987-01-01

    The oxidation behavior of a slip cast, yttria-doped, sintered reaction-bonded silicon nitride after 'flash oxidation' was investigated. It was found that both the static oxidation resistance and flexural stress rupture life (creep deformation) were improved at 1000 C in air compared to those of the same material without flash oxidation. Stress rupture data at high temperatures (1000 to 1200 C) are presented to indicate applied stress levels for oxidation-dependent and independent failures.

  20. Temperature dependence of nonlinear optical properties in Li doped nano-carbon bowl material

    NASA Astrophysics Data System (ADS)

    Li, Wei-qi; Zhou, Xin; Chang, Ying; Quan Tian, Wei; Sun, Xiu-Dong

    2013-04-01

    The mechanism for change of nonlinear optical (NLO) properties with temperature is proposed for a nonlinear optical material, Li doped curved nano-carbon bowl. Four stable conformations of Li doped corannulene were located and their electronic properties were investigated in detail. The NLO response of those Li doped conformations varies with relative position of doping agent on the curved carbon surface of corannulene. Conversion among those Li doped conformations, which could be controlled by temperature, changes the NLO response of bulk material. Thus, conformation change of alkali metal doped carbon nano-material with temperature rationalizes the variation of NLO properties of those materials.

  1. Heteroatom-doped highly porous carbon from human urine

    NASA Astrophysics Data System (ADS)

    Chaudhari, Nitin Kaduba; Song, Min Young; Yu, Jong-Sung

    2014-06-01

    Human urine, otherwise potentially polluting waste, is an universal unused resource in organic form disposed by the human body. We present for the first time ``proof of concept'' of a convenient, perhaps economically beneficial, and innovative template-free route to synthesize highly porous carbon containing heteroatoms such as N, S, Si, and P from human urine waste as a single precursor for carbon and multiple heteroatoms. High porosity is created through removal of inherently-present salt particles in as-prepared ``Urine Carbon'' (URC), and multiple heteroatoms are naturally doped into the carbon, making it unnecessary to employ troublesome expensive pore-generating templates as well as extra costly heteroatom-containing organic precursors. Additionally, isolation of rock salts is an extra bonus of present work. The technique is simple, but successful, offering naturally doped conductive hierarchical porous URC, which leads to superior electrocatalytic ORR activity comparable to state of the art Pt/C catalyst along with much improved durability and methanol tolerance, demonstrating that the URC can be a promising alternative to costly Pt-based electrocatalyst for ORR. The ORR activity can be addressed in terms of heteroatom doping, surface properties and electrical conductivity of the carbon framework.

  2. Heteroatom-doped highly porous carbon from human urine.

    PubMed

    Chaudhari, Nitin Kaduba; Song, Min Young; Yu, Jong-Sung

    2014-06-09

    Human urine, otherwise potentially polluting waste, is an universal unused resource in organic form disposed by the human body. We present for the first time "proof of concept" of a convenient, perhaps economically beneficial, and innovative template-free route to synthesize highly porous carbon containing heteroatoms such as N, S, Si, and P from human urine waste as a single precursor for carbon and multiple heteroatoms. High porosity is created through removal of inherently-present salt particles in as-prepared "Urine Carbon" (URC), and multiple heteroatoms are naturally doped into the carbon, making it unnecessary to employ troublesome expensive pore-generating templates as well as extra costly heteroatom-containing organic precursors. Additionally, isolation of rock salts is an extra bonus of present work. The technique is simple, but successful, offering naturally doped conductive hierarchical porous URC, which leads to superior electrocatalytic ORR activity comparable to state of the art Pt/C catalyst along with much improved durability and methanol tolerance, demonstrating that the URC can be a promising alternative to costly Pt-based electrocatalyst for ORR. The ORR activity can be addressed in terms of heteroatom doping, surface properties and electrical conductivity of the carbon framework.

  3. Low-temperature photochromic response of phosphorus-doped bismuth silicon oxide

    NASA Astrophysics Data System (ADS)

    McCullough, J. S.; Harmon, Angela; Martin, J. J.; Martin, J. J.; Harris, M. T.; Larkin, J. J.

    1995-08-01

    Phosphorus is one of several dopants that electronically compensate the native deep donor responsible for the yellow coloration observed in bismuth silicon oxide (BSO). Low-temperature optical absorption measurements of a series of Czochralski-grown P-doped BSO crystals show that ˜0.1-0.15 at. % P is needed in the sample to fully remove the yellow coloration. The absorption cutoff in the fully compensated P-doped sample was at 3.2 eV while compensated Al- and Ga-doped samples cutoff at 3.35 eV. Excitation at 10-15 K with near band-edge light produces photochromic absorption bands. In the lightly-doped (partially bleached) samples these bands were identical to those observed in undoped BSO. In the fully bleached sample a new spectrum was observed. Its major contribution was a band centered near 1.8 eV with a weaker absorption in the blue-green. By comparison with the spectra observed in undoped and in Al-doped material before and after photoexcitation it is believed that the 1.8 eV band is due to the [PO4]- center and that the broad 2.45 eV band observed in Al- and Ga-doped BSO is due to the [BiO4]0 center.

  4. Crystal-originated particles in germanium-doped Czochralski silicon crystal

    NASA Astrophysics Data System (ADS)

    Chen, Jiahe; Yang, Deren; Li, Hong; Ma, Xiangyang; Tian, Daxi; Li, Liben; Que, Duainlin

    2007-08-01

    Grown-in distribution and annealing behavior of crystal-originated particles (COPs) in Czochralski silicon (Cz-Si) wafer with germanium doping have been investigated. It was found that COPs with high density but small sizes were inclined to generate in germanium-doped Cz-Si (GCz-Si) wafer. The increase of boron atoms in Cz-Si crystal with the germanium doping could benefit the formation of COPs while the oxygen interstitials in GCz-Si wafer could enhance the generation of COPs with small sizes. Meanwhile, it was suggested that the germanium doping in Cz-Si would result in the poor thermal stability of COPs. It is proposed that the combination between germanium atom and vacancy could reduce the free vacancy concentration and the onset temperature for void generation, thus forming denser but smaller void. While the stress compensation induced by boron and germanium atoms could increase the vacancy fluxes in heavy-boron doped GCz-Si crystal, the presence of oxygen atom in GCz-Si would incline to benefit the formation of inner oxide walls of void, especially with small sizes. Furthermore, thinner oxide walls within void for GCz-Si crystal are considered to be charged for the easy annihilation by the germanium doping.

  5. Diameter Controlled of Carbon Nanotubes Synthesized on Nanoporous Silicon Support

    NASA Astrophysics Data System (ADS)

    Asli, N. A.; Shamsudin, M. S.; Maryam, M.; Yusop, S. F. M.; Suriani, A. B.; Rusop, M.; Abdullah, S.

    2013-06-01

    Carbon nanotubes (CNTs) have been successfully synthesized on nanoporous silicon template (NPSiT) using botanical source, camphor oil. Diameter of CNTs synthesized was controlled by pore size of NPSiT prepared by photo-electrochemical anodization method. The diameter of CNTs grown on different NPSiT corresponded to the pore diameter of NPSiT. FESEM images showed self-organized bundles of fiber-like structures of CNTs with diameter of around 20nm which were successfully grown directly on nanoporous silicon while raman spectra obtained ratio of ID/IG at 0.67.

  6. Internal modification of intrinsic and doped silicon using infrared nanosecond laser

    NASA Astrophysics Data System (ADS)

    Yu, Xiaoming; Wang, Xinya; Chanal, Margaux; Trallero-Herrero, Carlos A.; Grojo, David; Lei, Shuting

    2016-12-01

    We report experimental results of three-dimensional (3D) modification inside intrinsic and doped silicon wafers using laser pulses with 1.55 µm wavelength and 3.5 ns pulse duration. Permanent modification in the form of lines is generated inside silicon by tightly focusing and continuously scanning the laser beam inside samples, without introducing surface damage. Cross sections of these lines are observed after cleaving the samples and are further analyzed after mechanical polishing followed by chemical etching. With the objective lens corrected for spherical aberration, tight focusing inside silicon is achieved and the optimal focal depth is identified. The laser-induced modification has triangular shape and appears in regions prior to the geometrical focus, indicating significant absorption in those regions. Experiments with doped samples show similar modification for doping concentrations (and corresponding initial free carrier densities) in the range of 1013-1016 cm-3. At carrier densities of 1018 cm-3, linear absorption of light becomes significant and the modification is reduced in size.

  7. Electron transport in HBr adsorbed boron doped carbon nanotube

    NASA Astrophysics Data System (ADS)

    Srivastava, Reena; Shahzad Khan, Md.; Shrivastava, Sadhna; Srivastava, Anurag

    2017-01-01

    A 10,0 pristine as well as boron doped zigzag single walled carbon nanotube has been analyzed as possible HBr sensor using DFT based ab-initio approach. The variation in band structures, Mulliken charge, NBO charge, binding energy and conductance variation has been analyzed. The CNT observes a lowering of bandgap in presence of HBr molecule near its surface and reduces the metallicity of Boron doped CNT. The B-CNT shows semiconducting to metallic transition and on introducing the HBr molecule near the surface, changes its conductance drastically. Strong physisorption is observed for HBr over B-CNT surface as a consequence of electrostatic interaction.

  8. Electrochemical capacitance voltage measurements in highly doped silicon and silicon-germanium alloys

    SciTech Connect

    Sermage, B.; Essa, Z.; Taleb, N.; Quillec, M.; Aubin, J.; Hartmann, J. M.; Veillerot, M.

    2016-04-21

    The electrochemical capacitance voltage technique has been used on highly boron doped SiGe and Si layers. Although the boron concentration is constant over the space charge depth, the 1/C{sup 2} versus voltage curves are not linear. They indeed present a negative curvature. This can be explained by the existence of deep acceptors which ionise under a high electric field (large inverse voltage) and not at a low inverse voltage. The measured doping concentration in the electrochemical capacitance voltage increases strongly as the inverse voltage increases. Thanks to a comparison with the boron concentration measured by secondary ions mass spectrometry, we show that the relevant doping concentrations in device layers are obtained for small inverse voltage in agreement with the existence of deep acceptors. At the large inverse voltage, the measured doping can be more than twice larger than the boron concentration measured with a secondary ion mass spectroscopy.

  9. Surface recombination velocity and diffusion length of minority carriers in heavily doped silicon layers

    NASA Technical Reports Server (NTRS)

    Gatos, H. C.; Watanabe, M.; Actor, G.

    1977-01-01

    Quantitative analysis of the electron beam-induced current and the dependence of the effective diffusion length of the minority carriers on the penetration depth of the electron beam were employed for the analysis of the carrier recombination characteristics in heavily doped silicon layers. The analysis is based on the concept of the effective excitation strength of the carriers which takes into consideration all possible recombination sources. Two dimensional mapping of the surface recombination velocity of P-diffused Si layers will be presented together with a three dimensional mapping of minority carrier lifetime in ion implanted Si. Layers heavily doped with As exhibit improved recombination characteristics as compared to those of the layers doped with P.

  10. Growth and nucleation regimes in boron doped silicon by dynamical x-ray diffraction

    NASA Astrophysics Data System (ADS)

    Will, J.; Gröschel, A.; Bergmann, C.; Weißer, M.; Magerl, A.

    2014-09-01

    The oxygen precipitation of highly (17.5 mΩ cm) and moderately (4.5 Ω cm) boron (B) doped silicon (Si) crystals at 780 °C is investigated by following in-situ the evolution of diffraction Pendellösung oscillations. All samples show an initial diffusion-driven growth process which may change over into Ostwald ripening. For the highly doped sample and involving a nucleation step at 450 °C for 30 h, the precipitate density ρ is enhanced by a factor of 8 as compared to the moderately doped sample. The influence of a high B concentration on ρ is dramatically higher for the samples directly heated to 780 °C, where an enhancement factor of 80 is found. Considering Ostwald ripening as a second growth regime reveals consistent ripening rates and surface energies σ with those found at 900 °C in a previous publication.

  11. Growth and nucleation regimes in boron doped silicon by dynamical x-ray diffraction

    SciTech Connect

    Will, J. Gröschel, A.; Bergmann, C.; Weißer, M.; Magerl, A.

    2014-09-15

    The oxygen precipitation of highly (17.5 mΩ cm) and moderately (4.5 Ω cm) boron (B) doped silicon (Si) crystals at 780 °C is investigated by following in-situ the evolution of diffraction Pendellösung oscillations. All samples show an initial diffusion-driven growth process which may change over into Ostwald ripening. For the highly doped sample and involving a nucleation step at 450 °C for 30 h, the precipitate density ρ is enhanced by a factor of 8 as compared to the moderately doped sample. The influence of a high B concentration on ρ is dramatically higher for the samples directly heated to 780 °C, where an enhancement factor of 80 is found. Considering Ostwald ripening as a second growth regime reveals consistent ripening rates and surface energies σ with those found at 900 °C in a previous publication.

  12. A reconfigurable silicon-on-insulator diode with tunable electrostatic doping

    NASA Astrophysics Data System (ADS)

    Cristoloveanu, Sorin; Lee, Kyung Hwa; Bawedin, Maryline

    2017-08-01

    P-N diodes can be emulated in ultrathin, fully depleted Silicon-On-Insulator films by appropriately biasing the front and back gates. Adjacent electron and hole populations form a virtual P-N junction. Systematic current-voltage I-V characteristics are presented revealing similarities and major differences with those of conventional P-N diodes with ion-implanted doping. The lateral electric field from the anode combines with the gate-induced vertical field and leads to unusual two-dimensional effects. A distinct merit of the virtual diode is the possibility to adjust the concentrations of electrostatic doping via the gates. The reverse current, forward current, and depletion depth become gate-controlled. Our experiments show that by modifying the type, N or P, of electrostatic doping, the virtual diode can be reconfigured in 8 other devices: semi-virtual diodes, PIN diodes, tunneling field-effect transistors or band-modulation FET.

  13. Nissin Ion Doping System--H{sub 2}{sup +} Implantation for Silicon Layer Exfoliation

    SciTech Connect

    Cherekdjian, S.; Maschmeyer, R. O.; Cites, J.; Tatemichi, J.; Inouchi, Y.; Onoda, M.; Orihira, K.; Matsumoto, T.; Konishi, M.; Naito, M.

    2011-01-07

    A Nissin iG4 ion doping system (termed iG4) utilizes broad beam technology to implant GEN 4 sheets of glass for LCD production. The mechanical scanned end-station with robotic handling for GEN 4 glass substrates was redesigned, and a new end-station was built to handle rectangular silicon tiles (23x18 cm). A three sub-system modular risk reduction process was used to test production solutions, and maximize the success of transferring the R and D implant recipes developed on a standard focused beam ion implanter to the Nissin broad beam iG4 solution. The silicon tile end-station including the implant scanning system was tested for reliability and durability. The end-station handled rectangular silicon tiles reliably without detrimental edge chipping or silicon breakage. The ion optics was demonstrated to successfully provide stable hydrogen ions for the Corning registered silicon on glass layer transfer process. This layer transfer process is very susceptible and sensitive to the implant processing temperature. The temperature excursions during implant processing for the iG4 exfoliation process were found to be in line with the R and D focused ion beam system. This data confirmed the system production-readiness in providing an efficient solution for the high volume production of hydrogen implanted silicon rectangular tiles.

  14. Synthesis and Microstructure Evolution of Nano-Titania Doped Silicon Coatings

    NASA Astrophysics Data System (ADS)

    Moroz, N. A.; Umapathy, H.; Mohanty, P.

    2010-01-01

    The Anatase phase of Titania (TiO2) in nanocrystalline form is a well known photocatalyst. Photocatalysts are commercially used to accelerate photoreactions and increase photovoltaic efficiency such as in solar cells. This study investigates the in-flight synthesis of Titania and its doping into a Silicon matrix resulting in a catalyst-dispersed coating. A liquid precursor of Titanium Isopropoxide and ethanol was coaxially fed into the plasma gun to form Titania nanoparticles, while Silicon powder was externally injected downstream. Coatings of 75-150 μm thick were deposited onto flat coupons. Further, Silicon powder was alloyed with aluminum to promote crystallization and reduce the amorphous phase in the Silicon matrix. Dense coatings containing nano-Titania particles were observed under electron microscope. X-ray diffraction showed that both the Rutile and Anatase phases of the Titania exist. The influence of process parameters and aluminum alloying on the microstructure evolution of the doped coatings is analyzed and presented.

  15. Novel Ag-doped glass frits for high-efficiency crystalline silicon solar cells.

    PubMed

    Yuan, Sheng; Chen, Yongji; Mei, Zongwei; Zhang, Ming-Jian; Gao, Zhou; Wang, Xingbo; Jiang, Xing; Pan, Feng

    2017-06-06

    Glass frits play an important role in the front contact electrodes of crystalline silicon (c-Si) solar cells. In this work, we developed a novel glass frit by doping Ag into a glass frit in the process of high-temperature synthesis. When the Ag paste including this novel glass frit was used as the front contact electrode of silicon solar cells, the conversion efficiency of poly-crystalline silicon (pc-Si) solar cells was improved by 1.9% compared to the glass frit without Ag. Through SEM characterisation and calculation of series resistance, we further found that the interface between Ag and Si was improved and the contact resistance of Ag and Si was greatly reduced, which were believed to be responsible for the improvement of solar cell performance. This work shows great guidance significance to develop novel and highly efficient commercial glass frits applied in solar cells in the future.

  16. Ultra-Low-Temperature Homoepitaxial Growth of Sb-Doped Silicon

    NASA Technical Reports Server (NTRS)

    Blacksberg, Jordana; Hoenk, Michael E.; Nikzad, Shouleh

    2005-01-01

    An ultra-low-temperature process for homoepitaxial growth of high-quality, surface-confined, Sb-doped silicon layers is presented. Non-equilibrium growth by molecular beam epitaxy (MBE) is used to achieve dopant incorporation in excess of 2x10(exp 14) per sq cm in a thin, surface-confined layer. Sb surface segregation larger than expected from theoretical models was observed, in agreement with other experimental works. Furthermore, this work details an entirely low-temperature process (less than 450 degree C) that can be applied to fully processed and aluminum-metallized silicon devices. One application of this process is the formation of a back-surface electrode for back-illuminated high-purity silicon imaging arrays.

  17. Sulfur-doped microstructures formed in silicon using a modulated continuous wave laser

    NASA Astrophysics Data System (ADS)

    Ayachitula, R.; Brandt, L.; Chilton, M.; Knize, R. J.; Patterson, B. M.

    2013-05-01

    We demonstrate the enhanced optical properties of silicon microstructures formed by irradiation of a silicon surface by a modulated continuous wave (CW) laser beam in the presence of SF6. The microstructures are doped with about 0.6% sulfur, which extends the absorption well below the 1.1 μm bandgap of crystalline silicon and results in a 60% increase in the absorption of infrared radiation. This enhanced absorption as a result of these microstructures has been studied over the past decade in an effort to create high responsivity detectors and night vision goggles and improve the efficiency of solar cells. The enhanced optical absorption data we demonstrate are comparable to observations made in previous studies which were performed using more expensive and complicated laser systems such as regeneratively-amplified femtosecond pulsed laser systems and nanosecond and picosecond pulsed excimer lasers.

  18. Enhanced solar energy conversion in Au-doped, single-wall carbon nanotube-Si heterojunction cells

    PubMed Central

    2013-01-01

    The power conversion efficiency (PCE) of single-wall carbon nanotube (SCNT)/n-type crystalline silicon heterojunction photovoltaic devices is significantly improved by Au doping. It is found that the overall PCE was significantly increased to threefold. The efficiency enhancement of photovoltaic devices is mainly the improved electrical conductivity of SCNT by increasing the carrier concentration and the enhancing the absorbance of active layers by Au nanoparticles. The Au doping can lead to an increase of the open circuit voltage through adjusting the Fermi level of SCNT and then enhancing the built-in potential in the SCNT/n-Si junction. This fabrication is easy, cost-effective, and easily scaled up, which demonstrates that such Au-doped SCNT/Si cells possess promising potential in energy harvesting application. PMID:23663755

  19. Carbon elimination from silicon kerf: Thermogravimetric analysis and mechanistic considerations

    NASA Astrophysics Data System (ADS)

    Vazquez-Pufleau, Miguel; Chadha, Tandeep S.; Yablonsky, Gregory; Biswas, Pratim

    2017-01-01

    40% of ultrapure silicon is lost as kerf during slicing to produce wafers. Kerf is currently not being recycled due to engineering challenges and costs associated with removing its abundant impurities. Carbon left behind from the lubricant remains as one of the most difficult contaminants to remove in kerf without significant silicon oxidation. The present work enables to better understand the mechanism of carbon elimination in kerf which can aid the design of better processes for kef recycling and low cost photovoltaics. In this paper, we studied the kinetics of carbon elimination from silicon kerf in two atmospheres: air and N2, under a regime of no-diffusion-limitation. We report the apparent activation energy in both atmospheres using three methods: Kissinger, and two isoconversional approaches. In both atmospheres, a bimodal apparent activation energy is observed, suggesting a two stage process. A reaction mechanism is proposed in which (a) C-C and C-O bond cleavage reactions occur in parallel with polymer formation; (b) at higher temperatures, this polymer fully degrades in air but leaves a tarry residue in N2 that accounts for about 12% of the initial total carbon.

  20. Carbon elimination from silicon kerf: Thermogravimetric analysis and mechanistic considerations

    PubMed Central

    Vazquez-Pufleau, Miguel; Chadha, Tandeep S.; Yablonsky, Gregory; Biswas, Pratim

    2017-01-01

    40% of ultrapure silicon is lost as kerf during slicing to produce wafers. Kerf is currently not being recycled due to engineering challenges and costs associated with removing its abundant impurities. Carbon left behind from the lubricant remains as one of the most difficult contaminants to remove in kerf without significant silicon oxidation. The present work enables to better understand the mechanism of carbon elimination in kerf which can aid the design of better processes for kef recycling and low cost photovoltaics. In this paper, we studied the kinetics of carbon elimination from silicon kerf in two atmospheres: air and N2, under a regime of no-diffusion-limitation. We report the apparent activation energy in both atmospheres using three methods: Kissinger, and two isoconversional approaches. In both atmospheres, a bimodal apparent activation energy is observed, suggesting a two stage process. A reaction mechanism is proposed in which (a) C-C and C-O bond cleavage reactions occur in parallel with polymer formation; (b) at higher temperatures, this polymer fully degrades in air but leaves a tarry residue in N2 that accounts for about 12% of the initial total carbon. PMID:28098187

  1. Carbon elimination from silicon kerf: Thermogravimetric analysis and mechanistic considerations

    DOE PAGES

    Vazquez-Pufleau, Miguel; Chadha, Tandeep S.; Yablonsky, Gregory; ...

    2017-01-18

    40% of ultrapure silicon is lost as kerf during slicing to produce wafers. Currently, kerf is not recycled due to engineering challenges and costs associated with removing its abundant impurities. Carbon left behind from the lubricant remains as one of the most difficult contaminants to remove in kerf without significant silicon oxidation. The present work enables to better understand the mechanism of carbon elimination in kerf which can aid the design of better processes for kef recycling and low cost photovoltaics. In this paper, we studied the kinetics of carbon elimination from silicon kerf in two atmospheres: air and N2,more » under a regime of no-diffusion-limitation. Here, we report the apparent activation energy in both atmospheres using three methods: Kissinger, and two isoconversional approaches. In both atmospheres, a bimodal apparent activation energy is observed, suggesting a two stage process. Furthermore, a reaction mechanism is proposed in which (a) C-C and C-O bond cleavage reactions occur in parallel with polymer formation; (b) at higher temperatures, this polymer fully degrades in air but leaves a tarry residue in N2 that accounts for about 12% of the initial total carbon.« less

  2. Solution phase synthesis of aluminum-doped silicon nanoparticles via room-temperature, solvent based chemical reduction of silicon tetrachloride

    NASA Astrophysics Data System (ADS)

    Mowbray, Andrew James

    We present a method of wet chemical synthesis of aluminum-doped silicon nanoparticles (Al-doped Si NPs), encompassing the solution-phase co-reduction of silicon tetrachloride (SiCl4) and aluminum chloride (AlCl 3) by sodium naphthalide (Na[NAP]) in 1,2-dimethoxyethane (DME). The development of this method was inspired by the work of Baldwin et al. at the University of California, Davis, and was adapted for our research through some noteworthy procedural modifications. Centrifugation and solvent-based extraction techniques were used throughout various stages of the synthesis procedure to achieve efficient and well-controlled separation of the Si NP product from the reaction media. In addition, the development of a non-aqueous, formamide-based wash solution facilitated simultaneous removal of the NaCl byproduct and Si NP surface passivation via attachment of 1-octanol to the particle surface. As synthesized, the Si NPs were typically 3-15 nm in diameter, and were mainly amorphous, as opposed to crystalline, as concluded from SAED and XRD diffraction pattern analysis. Aluminum doping at various concentrations was accomplished via the inclusion of aluminum chloride (AlCl3); which was in small quantities dissolved into the synthesis solution to be reduced alongside the SiCl4 precursor. The introduction of Al into the chemically-reduced Si NP precipitate was not found to adversely affect the formation of the Si NPs, but was found to influence aspects such as particle stability and dispersibility throughout various stages of the procedure. Analytical techniques including transmission electron microscopy (TEM), FTIR spectroscopy, and ICP-optical emission spectroscopy were used to comprehensively characterize the product NPs. These methods confirm both the presence of Al and surface-bound 1-octanol in the newly formed Si NPs.

  3. Stable doping of carbon nanotubes via molecular self assembly

    SciTech Connect

    Lee, B.; Chen, Y.; Podzorov, V.; Cook, A.; Zakhidov, A.

    2014-10-14

    We report a novel method for stable doping of carbon nanotubes (CNT) based on methods of molecular self assembly. A conformal growth of a self-assembled monolayer of fluoroalkyl trichloro-silane (FTS) at CNT surfaces results in a strong increase of the sheet conductivity of CNT electrodes by 60–300%, depending on the CNT chirality and composition. The charge carrier mobility of undoped partially aligned CNT films was independently estimated in a field-effect transistor geometry (~100 cm²V⁻¹s⁻¹). The hole density induced by the FTS monolayer in CNT sheets is estimated to be ~1.8 ×10¹⁴cm⁻². We also show that FTS doping of CNT anodes greatly improves the performance of organic solar cells. This large and stable doping effect, easily achieved in large-area samples, makes this approach very attractive for applications of CNTs in transparent and flexible electronics.

  4. Distribution patterns of different carbon nanostructures in silicon nitride composites.

    PubMed

    Tapasztó, Orsolya; Markó, Márton; Balázsi, Csaba

    2012-11-01

    The dispersion properties of single- and multi-walled carbon nanotubes as well as mechanically exfoliated few layer graphene flakes within the silicon nitride ceramic matrix have been investigated. Small angle neutron scattering experiments have been employed to gain information on the dispersion of the nano-scale carbon fillers throughout the entire volume of the samples. The neutron scattering data combined with scanning electron microscopy revealed strikingly different distribution patterns for different types of carbon nanostructures. The scattering intensities for single wall carbon nanotubes (SWCNTs) reveal a decay exponent characteristic to surface fractals, which indicate that the predominant part of nanotubes can be found in loose networks wrapping the grains of the polycrystalline matrix. By contrast, multi wall carbon nanotubes (MWCNTs) were found to be present mainly in the form of bulk aggregate structures, while few-layer graphene (FLG) flakes have been individually dispersed within the host matrix, under the very same preparation and processing conditions.

  5. Single molecule capture by a doped monatomic carbon chain

    NASA Astrophysics Data System (ADS)

    Lin, Zheng-Zhe; Chen, Xi

    2013-05-01

    A B-doped monatomic carbon chain has fine molecular capture ability for H2O and especially for NO2, which is better than that of other doped monatomic carbon chains. At 300 K and 1 atm, the capture probability of a B-doped monatomic carbon chain is appreciable even in a NO2 concentration of 1 ppm, and the influence of the adsorbate on the quantum transport is notable for the detection. In contrast, a pure monatomic carbon chain shows its invulnerability to N2, O2, H2O, NO2, CO and CO2, and is incapable of molecule capture due to having too low adsorption ability and weak response to quantum conductance. In the investigation of these issues, a statistic mechanical model (Lin et al 2011 Europhys. Lett. 94 40002; 2012 Chin. Phys. Lett. 29 080504) was extended to predict the adsorption and desorption rates of molecules on nanodevices. The theoretical foundation of this model was further discussed and its accuracy was verified by molecular dynamics simulations.

  6. Heteroatom-doped highly porous carbon from human urine

    PubMed Central

    Chaudhari, Nitin Kaduba; Song, Min Young; Yu, Jong-Sung

    2014-01-01

    Human urine, otherwise potentially polluting waste, is an universal unused resource in organic form disposed by the human body. We present for the first time “proof of concept” of a convenient, perhaps economically beneficial, and innovative template-free route to synthesize highly porous carbon containing heteroatoms such as N, S, Si, and P from human urine waste as a single precursor for carbon and multiple heteroatoms. High porosity is created through removal of inherently-present salt particles in as-prepared “Urine Carbon” (URC), and multiple heteroatoms are naturally doped into the carbon, making it unnecessary to employ troublesome expensive pore-generating templates as well as extra costly heteroatom-containing organic precursors. Additionally, isolation of rock salts is an extra bonus of present work. The technique is simple, but successful, offering naturally doped conductive hierarchical porous URC, which leads to superior electrocatalytic ORR activity comparable to state of the art Pt/C catalyst along with much improved durability and methanol tolerance, demonstrating that the URC can be a promising alternative to costly Pt-based electrocatalyst for ORR. The ORR activity can be addressed in terms of heteroatom doping, surface properties and electrical conductivity of the carbon framework. PMID:24909133

  7. Method for sputtering a PIN microcrystalline/amorphous silicon semiconductor device with the P and N-layers sputtered from boron and phosphorous heavily doped targets

    DOEpatents

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-04-02

    A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

  8. Amorphization of Silicon Carbide by Carbon Displacement

    SciTech Connect

    Devanathan, Ram; Gao, Fei; Weber, William J.

    2004-05-10

    We have used molecular dynamics simulations to examine the possibility of amorphizing silicon carbide (SiC) by exclusively displacing C atoms. At a defect generation corresponding to 0.2 displacements per atom, the enthalpy surpasses the level of melt-quenched SiC, the density decreases by about 15%, and the radial distribution function shows a lack of long-range order. Prior to amorphization, the surviving defects are mainly C Frenkel pairs (67%), but Si Frenkel pairs (18%) and anti-site defects (15%) are also present. The results indicate that SiC can be amorphized by C sublattice displacements. Chemical short-range disorder, arising mainly from interstitial production, plays a significant role in the amorphization.

  9. Electronically transparent graphene barriers against unwanted doping of silicon.

    PubMed

    Wong, Calvin Pei Yu; Koek, Terence Jun Hui; Liu, Yanpeng; Loh, Kian Ping; Goh, Kuan Eng Johnson; Troadec, Cedric; Nijhuis, Christian A

    2014-11-26

    Diffusion barriers prevent materials from intermixing (e.g., undesired doping) in electronic devices. Most diffusion barrier materials are often very specific for a certain combination of materials and/or change the energetics of the interface because they are insulating or add to the contact resistances. This paper presents graphene (Gr) as an electronically transparent, without adding significant resistance to the interface, diffusion barrier in metal/semiconductor devices, where Gr prevents Au and Cu from diffusion into the Si, and unintentionally dope the Si. We studied the electronic properties of the n-Si(111)/Gr/M Schottky barriers (with and without Gr and M=Au or Cu) by I(V) measurements and at the nanoscale by ballistic electron emission spectroscopy (BEEM). The layer of Gr does not change the Schottky barrier of these junctions. The Gr barrier was stable at 300 °C for 1 h and prevented the diffusion of Cu into n-Si(111) and the formation of Cu3Si. Thus, we conclude that the Gr is mechanically and chemically stable enough to withstand the harsh fabrication methods typically encountered in clean room processes (e.g., deposition of metals in high vacuum conditions at high temperatures), it is electronically transparent (it does not change the energetics of the Si/Au or Si/Cu Schottky barriers), and effectively prevented diffusion of the Cu or Au into the Si at elevated temperatures and vice versa.

  10. Microdefects in nitrogen doped FZ silicon revealed by Li+ drifting

    SciTech Connect

    Knowlton, W.B.; Walton, J.T.; Lee, J.S.

    1995-07-01

    ULSI technology requires ultra-thin device oxides with excellent breakdown integrity. Recent studies have unveiled degraded dielectric breakdown voltage (DBV) performance of the ultra-thin oxides. These findings suggest that one source for poor oxide integrity is the incorporation of native defects from the Si substrate during oxide growth. Primary defect candidates are D defects which exist mostly in the central region of floating zone (FZ) grown Si crystals. Nitrogen (N) doping eliminates D defects, as detected by conventional means, and improves oxide integrity. Results are presented indicating the prevalence of microdefects in the central region of p-type nitrogen doped FZ Si using the method of Li ion (Li{sup +}) drifting in an electric field. A model has been developed based on Li interactions in Si which describes the Li{sup +} precipitation mechanism. The mechanism establishes that vacancies are the most likely Li{sup +} precipitation sites. The results are discussed in relation to breakdown mode patterns of polished FZ Si wafers after gate oxide tests.

  11. Carbon p electron ferromagnetism in silicon carbide

    SciTech Connect

    Wang, Yutian; Liu, Yu; Wang, Gang; Anwand, Wolfgang; Jenkins, Catherine A.; Arenholz, Elke; Munnik, Frans; Gordan, Ovidiu D.; Salvan, Georgeta; Zahn, Dietrich R. T.; Chen, Xiaolong; Gemming, Sibylle; Helm, Manfred; Zhou, Shengqiang

    2015-03-11

    Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupling can be attributed to the p electrons of the nearest-neighbor carbon atoms around the VSiVC divacancies. Thus, the ferromagnetism is traced down to its microscopic electronic origin.

  12. Carbon p Electron Ferromagnetism in Silicon Carbide

    PubMed Central

    Wang, Yutian; Liu, Yu; Wang, Gang; Anwand, Wolfgang; Jenkins, Catherine A.; Arenholz, Elke; Munnik, Frans; Gordan, Ovidiu D.; Salvan, Georgeta; Zahn, Dietrich R. T.; Chen, Xiaolong; Gemming, Sibylle; Helm, Manfred; Zhou, Shengqiang

    2015-01-01

    Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupling can be attributed to the p electrons of the nearest-neighbor carbon atoms around the VSiVC divacancies. Thus, the ferromagnetism is traced down to its microscopic electronic origin. PMID:25758040

  13. Carbon p electron ferromagnetism in silicon carbide

    DOE PAGES

    Wang, Yutian; Liu, Yu; Wang, Gang; ...

    2015-03-11

    Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupling can be attributed to the p electrons of the nearest-neighbor carbon atoms around the VSiVC divacancies. Thus, the ferromagnetism is traced down to its microscopic electronic origin.

  14. Angstrom resolved imaging of charge percolation through the interface between phosphorous doped crystalline silicon and silicon dioxide

    NASA Astrophysics Data System (ADS)

    Ambal, Kapildep; Rahe, Philipp; Williams, Clayton C.; Boehme, Christoph

    2014-03-01

    Using a high resolution (~100fm/√{ Hz} spectral noise density) scanning probe at T ~4K, we measure currents through the interface between phosphorus doped ([P] ~ 1017-10<18 cm-3) crystalline silicon and a native silicondioxide layer as a function of either the lateral cantilever position or the applied cantilever bias voltage (c-AFM imaging). These measurements visualize the percolation of charge through the interface and they show that local current maxima exist in patch-like structures of ~30nm diameter, randomly distributed with an average distance between the centers of 30-40 nm. We associate these with P donor electron states. Within the patch-like structures, we observe additional, extremely localized (~5Å), current maxima. We associate those to silicon dangling bonds at the interface or within the silicondioxide. The hypothesized association of these very reproducible features is tested by current-voltage (I-V) measurements. For any randomly chosen surface position, these measurements reveal one of only four qualitatively distinct I-V responses, each of which is identified with charge percolation from P donors to the cantilever either with or without different kinds of silicon dangling bond involvement. We acknowledge support by the National Science Foundation, Major Research Instrumentation Program #0959328.

  15. Silicon carbide nanowires and composites obtained from carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Wang, Yuejian

    In this dissertation a simple route has been developed to synthesize Silicon Carbide (beta-SiC) nanothreads and C-SiC coaxial nanotubes by solid/liquid-state reaction between multiwall carbon nanotubes and silicon conducted at 1473 K and 1723 K, respectively. Through the kinetics study of SiC formation from carbon nanotubes and Si, our results demonstrated that carbon nanotubes may have higher chemical reactivity than other forms of elemental Carbon. Based on the above investigation, CNT/SiC and diamond/CNT/SiC were manufactured. Key factors influencing the mechanical properties of final products, such as phase composition, grain size, stress-strain, sintering time, and sintering temperature were thoroughly studied with Raman spectroscopy, x-ray diffraction, SEM and TEM techniques. Taking advantage of high elasticity of Carbon nanotube and its ability to block the microcrack propagation and dislocation movement, both composites showed enhanced fracture toughness. Carbon nanotubes composites trigger a new field in fundamental science and manifest potential application in multiple industries.

  16. An investigation of the gettering properties of silicon-germanium and silicon-carbon compounds

    SciTech Connect

    Barbero, C.J.

    1993-01-01

    Work concerning silicon-germanium (SiGe) and silicon-carbon (SiC) compounds is presented in this dissertation. Extended Hueckel (EHT) parameters for the band structure of group IV semiconductors and semiconductor compounds are put forth using established parameters. It will be demonstrated that EHT theory can accurately predict the band structure for the pure group IV semiconductors, however provides notably unusual results for alloy systems. Relativistic Extended Hueckel (REX) Theory is employed to understand the outcome of transition metals in SiGe and SiC compounds. The gettering effect and efficiency of germanium and carbon is demonstrated by using a 54 atom cluster. SiGe and SiC samples were prepared using keV ion implantation. It was found that annealing germanium implanted samples constrains germanium in a substitutional position. The consequences of different doses and different energies for germanium implanted silicon is also explored. It is established that increasing energy as well as increasing dose has the effect of creating amorphous layers and can cause alloying. Some of the germanium implanted silicon samples were used to study the gettering of copper, which was evaporated on the backside of the samples. Further studies include keV ion implantation of transition metals (iron and nickel) into silicon substrates that were implanted with MeV germanium and carbon prior to keV (iron and nickel) implantation. The effects of transition metals (i.e., iron, nickel and copper) evaporated on ultrahigh vacuum-chemical vapor deposition (UHV-CVD) prepared SiGe compounds was also investigated. Techniques such as Rutherford Backscattering (RBS), Ion Channeling, Secondary Ion Mass Spectrometry (SIMS), Capacitance-Voltage (C-V) and Deep Level Transient Spectroscopy (DLTS) were used to study the effects of implantation energy, implantation dose and annealing temperature as well as the different results produced by introduction of several transition metals.

  17. Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm

    SciTech Connect

    Ramírez, J. M. Berencén, Y.; Garrido, B.; Cueff, S.; Labbé, C.

    2014-08-28

    Erbium-doped silicon-rich nitride electroluminescent thin-films emitting at 1.54 μm have been fabricated and integrated within a metal-oxide-semiconductor structure. By gradually varying the stoichiometry of the silicon nitride, we uncover the role of silicon excess on the optoelectronic properties of devices. While the electrical transport is mainly enabled in all cases by Poole-Frenkel conduction, power efficiency and conductivity are strongly altered by the silicon excess content. Specifically, the increase in silicon excess remarkably enhances the conductivity and decreases the charge trapping; however, it also reduces the power efficiency. The main excitation mechanism of Er{sup 3+} ions embedded in silicon-rich nitrides is discussed. The optimum Si excess that balances power efficiency, conductivity, and charge trapping density is found to be close to 16%.

  18. Thermal Fatigue Behavior of Silicon-Carbide-Doped Silver Microflake Sinter Joints for Die Attachment in Silicon/Silicon Carbide Power Devices

    NASA Astrophysics Data System (ADS)

    Zhang, Hao; Chen, Chuantong; Nagao, Shijo; Suganuma, Katsuaki

    2017-02-01

    We studied the thermal fatigue behavior of submicron silicon carbide particle (SiCp)-doped silver (Ag) microflake sinter joints for die attachment in next-generation power devices. Si dummy chips and direct bonded copper substrates with various metallization schemes were bonded using SiCp-doped Ag microflakes under mild conditions (250°C, 30 min, 0.4 MPa). The SiCp was distributed homogeneously in the porous Ag network and inhibited morphological evolution during thermal cycling tests. The shear strength of as-sintered pure Ag and SiCp-added joints was ˜50 MPa and 35 MPa, respectively. Thermal cycling tests from -40°C to 250°C were conducted for up to 1000 cycles (hours) to characterize the thermostability of the bonded joints. After 1000 cycles, joints with and without SiCp experienced bonding degradation, with shear strength of ˜25 MPa and 20 MPa, respectively. Thus, after 1000 cycles, the shear strength of pure Ag and SiCp-doped joints decreased by 58% and 42%, respectively, compared with their maximum value. Coarsening of porous Ag occurred in pure Ag joints. SiCp addition inhibited morphological evolution of SiCp-doped joints during thermal cycling. However, vertical cracks generated by thermal stress were observed in joints both with and without SiCp, which may limit long-term reliability.

  19. Electrical characteristics of carbon nanotube-doped composites

    NASA Astrophysics Data System (ADS)

    Eletskii, A. V.; Knizhnik, A. A.; Potapkin, B. V.; Kenny, J. M.

    2015-03-01

    This paper reviews research into the electrical properties that are imparted to composite materials by introducing carbon nanotubes (CNTs) into their polymer matrices. Due to the large aspect ratio of CNTs, even a small amount of doping (at a level of 0.01 - 0.1%) is enough to increase the conductivity of the material by more than ten orders of magnitude, thus changing it from an insulator to a conductor. At low doping, charge transfer is of a percolation nature in the sense that nanotubes that are in contact with each other form conducting channels in the material. Importantly, the conductivity has a threshold nature, so that the conduction jump occurs upon an arbitrarily small increase in a doping level above the critical value. This paper summarizes experimental data on the position of the percolation threshold and the maximum magnitude of the conductivity for composites obtained using various polymer types and a variety of CNT geometries. Factors affecting the electrical characteristics of composites produced by distinct methods are analyzed. Methods for and basic results obtained from the simulation of the percolation conductivity of CNT-doped composites are discussed. Particular attention is given to contact phenomena that occur at adjacent nanotube boundaries and which determine the conductivity of CNT-doped composites.

  20. Novel Non-Carbonate Based Electrolytes for Silicon Anodes

    SciTech Connect

    Zhu, Ye; Yang, Johnny; Cheng, Gang; Carroll, Kyler; Clemons, Owen; Strand, Diedre

    2016-09-09

    Substantial improvement in the energy density of rechargeable lithium batteries is required to meet the future needs for electric and plug-in electric vehicles (EV and PHEV). Present day lithium ion battery technology is based on shuttling lithium between graphitic carbon and inorganic oxides. Non-graphitic anodes, such as silicon can provide significant improvements in energy density but are currently limited in cycle life due to reactivity with the electrolyte. Wildcat/3M proposes the development of non-carbonate electrolyte formulations tailored for silicon alloy anodes. Combining these electrolytes with 3M’s anode and an NMC cathode will enable up to a 20% increase in the volumetric cell energy density, while still meeting the PHEV/EV cell level cycle/calendar life goals.

  1. Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector.

    PubMed

    Lim, Geunsik; Manzur, Tariq; Kar, Aravinda

    2011-06-10

    An uncooled mid-wave infrared (MWIR) detector is developed by doping an n-type 4H-SiC with Ga using a laser doping technique. 4H-SiC is one of the polytypes of crystalline silicon carbide and a wide bandgap semiconductor. The dopant creates an energy level of 0.30  eV, which was confirmed by optical spectroscopy of the doped sample. This energy level corresponds to the MWIR wavelength of 4.21  μm. The detection mechanism is based on the photoexcitation of electrons by the photons of this wavelength absorbed in the semiconductor. This process modifies the electron density, which changes the refractive index, and, therefore, the reflectance of the semiconductor is also changed. The change in the reflectance, which is the optical response of the detector, can be measured remotely with a laser beam, such as a He-Ne laser. This capability of measuring the detector response remotely makes it a wireless detector. The variation of refractive index was calculated as a function of absorbed irradiance based on the reflectance data for the as-received and doped samples. A distinct change was observed for the refractive index of the doped sample, indicating that the detector is suitable for applications at the 4.21  μm wavelength.

  2. Boron/Carbon/Silicon/Nitrogen Ceramics And Precursors

    NASA Technical Reports Server (NTRS)

    Riccitiello, Salvatore; Hsu, Ming TA; Chen, Timothy S.

    1996-01-01

    Ceramics containing various amounts of boron, carbon, silicon, and nitrogen made from variety of polymeric precursors. Synthesized in high yield from readily available and relatively inexpensive starting materials. Stable at room temperature; when polymerized, converted to ceramics in high yield. Ceramics resist oxidation and other forms of degradation at high temperatures; used in bulk to form objects or to infiltrate other ceramics to obtain composites having greater resistance to oxidation and high temperatures.

  3. Boron/Carbon/Silicon/Nitrogen Ceramics And Precursors

    NASA Technical Reports Server (NTRS)

    Riccitiello, Salvatore; Hsu, Ming TA; Chen, Timothy S.

    1996-01-01

    Ceramics containing various amounts of boron, carbon, silicon, and nitrogen made from variety of polymeric precursors. Synthesized in high yield from readily available and relatively inexpensive starting materials. Stable at room temperature; when polymerized, converted to ceramics in high yield. Ceramics resist oxidation and other forms of degradation at high temperatures; used in bulk to form objects or to infiltrate other ceramics to obtain composites having greater resistance to oxidation and high temperatures.

  4. Corrosion and Wear Behaviors of Cr-Doped Diamond-Like Carbon Coatings

    NASA Astrophysics Data System (ADS)

    Viswanathan, S.; Mohan, L.; Bera, Parthasarathi; Kumar, V. Praveen; Barshilia, Harish C.; Anandan, C.

    2017-06-01

    A combination of plasma-enhanced chemical vapor deposition and magnetron sputtering techniques has been employed to deposit chromium-doped diamond-like carbon (DLC) coatings on stainless steel, silicon and glass substrates. The concentrations of Cr in the coatings are varied by changing the parameters of the bipolar pulsed power supply and the argon/acetylene gas composition. The coatings have been studied for composition, morphology, surface nature, nanohardness, corrosion resistance and wear resistance properties. The changes in I D /I G ratio with Cr concentrations have been obtained from Raman spectroscopy studies. Ratio decreases with an increase in Cr concentration, and it has been found to increase at higher Cr concentration, indicating the disorder in the coating. Carbide is formed in Cr-doped DLC coatings as observed from XPS studies. There is a decrease in sp 3/sp 2 ratios with an increase in Cr concentration, and it increases again at higher Cr concentration. Nanohardness studies show no clear dependence of hardness on Cr concentration. DLC coatings with lower Cr contents have demonstrated better corrosion resistance with better passive behavior in 3.5% NaCl solution, and corrosion potential is observed to move toward nobler (more positive) values. A low coefficient of friction (0.15) at different loads is observed from reciprocating wear studies. Lower wear volume is found at all loads on the Cr-doped DLC coatings. Wear mechanism changes from abrasive wear on the substrate to adhesive wear on the coating.

  5. Corrosion and Wear Behaviors of Cr-Doped Diamond-Like Carbon Coatings

    NASA Astrophysics Data System (ADS)

    Viswanathan, S.; Mohan, L.; Bera, Parthasarathi; Kumar, V. Praveen; Barshilia, Harish C.; Anandan, C.

    2017-08-01

    A combination of plasma-enhanced chemical vapor deposition and magnetron sputtering techniques has been employed to deposit chromium-doped diamond-like carbon (DLC) coatings on stainless steel, silicon and glass substrates. The concentrations of Cr in the coatings are varied by changing the parameters of the bipolar pulsed power supply and the argon/acetylene gas composition. The coatings have been studied for composition, morphology, surface nature, nanohardness, corrosion resistance and wear resistance properties. The changes in I D / I G ratio with Cr concentrations have been obtained from Raman spectroscopy studies. Ratio decreases with an increase in Cr concentration, and it has been found to increase at higher Cr concentration, indicating the disorder in the coating. Carbide is formed in Cr-doped DLC coatings as observed from XPS studies. There is a decrease in sp 3/ sp 2 ratios with an increase in Cr concentration, and it increases again at higher Cr concentration. Nanohardness studies show no clear dependence of hardness on Cr concentration. DLC coatings with lower Cr contents have demonstrated better corrosion resistance with better passive behavior in 3.5% NaCl solution, and corrosion potential is observed to move toward nobler (more positive) values. A low coefficient of friction (0.15) at different loads is observed from reciprocating wear studies. Lower wear volume is found at all loads on the Cr-doped DLC coatings. Wear mechanism changes from abrasive wear on the substrate to adhesive wear on the coating.

  6. Formation and evolution of oxygen-vacancy clusters in lead and tin doped silicon

    NASA Astrophysics Data System (ADS)

    Londos, C. A.; Aliprantis, D.; Sgourou, E. N.; Chroneos, A.; Pochet, P.

    2012-06-01

    Infrared spectroscopy (IR) measurements were used to investigate the effect of lead (Pb), tin (Sn), and (Pb, Sn) codoping on electron radiation-induced defects in silicon (Si). The study was mainly focused on oxygen-vacancy (VOn) clusters and in particular their formation and evolution upon annealing. It was determined that Pb causes a larger reduction in the production of the VO defect than Sn. In (Pb, Sn) co-doped Si isochronal anneals revealed that the evolution of VO increases substantially at ˜170 °C. This is attributed to the release of V from the SnV pair. Interestingly, in the corresponding evolution curves of VO in the Sn- and the Pb-doped samples, this inverse annealing stage is also present for the former while it is not present for the latter. This is attributed to the formation of PbV pairs that do not dissociate below 280 °C. The partial capture of V by Sn in co-doped samples is rationalized through the higher compressive local strain around Pb atoms that leads to a retardation of vacancy diffusion. The conversion of VO to the VO2 defect is substantially reduced in the Pb-doped sample. The evolution curves of VO and VO2 clusters in the isovalent doped Si samples hint the production of VO2 from other mechanisms (i.e., besides VO + Oi → VO2). For larger VOn clusters (n = 3,4), the signals are very weak in the Pb-doped sample, whereas for n ≥ 5, they are not present in the spectra. Conversely, bands related with the VO5 and VOnCs defects are present in the spectra of the Sn-doped and (Pb, Sn) codoped Si.

  7. Ultrathin polytyramine films by electropolymerisation on highly doped p-type silicon electrodes

    NASA Astrophysics Data System (ADS)

    Losic, Dusan; Cole, Martin; Thissen, Helmut; Voelcker, Nicolas H.

    2005-06-01

    In recent years, silicon-based materials have been used extensively in device fabrication for sensors, microfluidic and biomaterial applications. In order to enhance the performance of the material, a number of surface functionalisations are employed. However, until now, silicon has not been used as an electrode material for electrodeposition of functional polymers. Here, highly doped p-type silicon was used as an electrode facilitating the electropolymerisation of ultrathin polytyramine (PT) films by cyclic voltammetry. The influence of resistivity, pre-treatment of the silicon surface and electrochemical conditions on the electropolymerisation process was studied. The results show that ultrathin PT films with a controlled thickness from 2 to 15 nm exhibit good electrochemical stability in buffer solution (pH 6.8) over a large potential window (-1.5 V to 1.5 V) and passivating properties towards a redox probe. In terms of the film morphology, a pinhole-free smooth surface with a roughness below 0.5 nm and with dominantly globular features of 40-60 nm diameter was observed by AFM. XPS characterisation showed that PT films display amine functional groups at the coating surface. UV induced silicon oxidation was used to prepare patterned PT films.

  8. Silicon-carbon interactions in high latitude watersheds

    NASA Astrophysics Data System (ADS)

    Humborg, C.; Morth, C.; Struyf, E.; Conley, D. J.

    2008-12-01

    Changes in climate and hydrology in high latitude regions could liberate large amounts of previously inactive organic carbon (OC) during a prolonging thawing period, and new studies have shown that a great deal of this organic C is remineralized as CO2 during its transport to the sea. However, OC (with its origin in atmospheric carbon) and dissolved silicate (DSi) concentrations in taiga and tundra rivers are intimately linked, and higher concentrations of weathering products are found in taiga and tundra rivers with a higher percentage of peat in their watersheds. It appears that the weathering regime of taiga and tundra watersheds is tightly linked to carbon-silicon interactions, in which carbon acts both as a weathering agent (soil CO2 from degradation of OC) and as a weathering product (DSi and bicarbonate). Whereas respiration of OC can be regarded as a positive feedback to global warming, weathering can be regarded as a negative feedback to global warming since atmospheric CO2 is converted to bicarbonate and thereby locked into the aquatic phase for geological time scales. Thus, bicarbonate export may compensate for significant amounts of exported OC thereby reducing the positive feedback to atmospheric CO2. However, the silicon-carbon interactions are not straight forward as suggested by classical inverse modelling,using the stochiometry of rock forming minerals as base, since high latitude wetlands contain a massive stock of amorphous silica (diatoms and phytoliths) buffering the actual DSi export, suggesting that the Si cycle is to a large extent biologically controlled.

  9. Fabrication and characterization of carbon doped molybdenum oxide nanostructures.

    PubMed

    Wisitsoraat, A; Tuantranont, A; Patthanasettakul, V; Lomas, T

    2009-02-01

    Molybdenum oxide (MoOx) nanostructure has gained considerable attention because of its low-cost fabrication by low-temperature evaporation/condensation technique and its promising properties for applications in the field of catalysts and chemical sensors. However, MoOx has some inferior properties including very high electrical resistivity and instability at elevated temperature. These properties may be improved by means of foreign atom addition into its nanostructure. In this work, we develop a simple mean for doping of MoOx nanostructures by introduction of gas source dopant during evaporation. Carbon doped MoOx nanostructures have been synthesized by MoOx powder evaporation in Argon/Acetylene mixture with varying process parameters. Depending on growth conditions, various nanostructures including, nanorod, nanoplate, nanodots, can be formed with different dimensions and doping concentrations. Structural characterization by scanning electron microscopy (SEM), energy dispersive X-ray spectrometry (EDX), and X-ray diffraction (XRD) indicate that the MoOx based nanostructures are highly crystalline and carbon dopant is successfully incorporated in the structure with controllable concentration. Electrical characterization shows that the electrical conductivity of molybdenum oxide nanostructures can be increased by several orders of magnitude with carbon incorporation.

  10. Oxygen aggregation kinetics, thermal donors and carbon-oxygen defect formation in silicon containing carbon and tin

    SciTech Connect

    Angeletos, T.; Sgourou, E. N.; Andrianakis, A.; Diamantopoulou, A.; Londos, C. A.; Chroneos, A.

    2015-07-07

    Localized vibrational mode spectroscopy measurements on Czochralski silicon (Cz-Si) samples subjected to isothermal annealing at 450 °C are reported. First, we studied the effect of carbon (C) and tin (Sn) isovalent dopants on the aggregation kinetics of oxygen. It is determined that the reduction rate of oxygen is described by the Johnson-Mehl-Avrami equation in accordance with previous reports. The activation energy related with the reaction rate constant of the process is calculated to increase from Cz-Si, to C-doped Cz-Si (CCz-Si), to Sn-doped Cz-Si contained C (SnCz-Si). This is attributed to the presence of the isovalent dopants that may impact both the kinetics of the oxygen atoms and also may lead to the formation of other oxygen-related clusters. Second, we studied the effect of Sn on the formation and evolution of carbon-oxygen (C-O) defects. It was determined that the presence of Sn suppresses the formation of the C-O defects as indicated by the reduction in the strength of the 683, 626, and 586 cm{sup −1} well-known bands of C{sub s}O{sub i} defect. The phenomenon is attributed to the association of Sn with C atoms that may prevent the pairing of O with C. Third, we investigated the effect of C and Sn on the formation of thermal donors (TDs). Regarding carbon our results verified previous reports that carbon suppresses the formation of TDs. Interestingly, when both C and Sn are present in Si, very weak bands of TDs were observed, although it is known that Sn alone suppress their formation. This may be attributed to the competing strains of C and Sn in the Si lattice.

  11. Nitrogen-doped carbon dots as multifunctional fluorescent probes

    NASA Astrophysics Data System (ADS)

    Du, Fengyi; Jin, Xin; Chen, Junhui; Hua, Ye; Cao, Mulan; Zhang, Lirong; Li, Jianan; Zhang, Li; Jin, Jie; Wu, Chaoyang; Gong, Aihua; Xu, Wenrong; Shao, Qixiang; Zhang, Miaomiao

    2014-11-01

    Highly fluorescent nitrogen-doped carbon dots (NCDs) were prepared through the hydrothermal carbonization of citric acid and ammonium acetate. The resulting NCDs were quasi-spherical particles with an average diameter of approximately 2.1 nm. They exhibited excellent photoluminescent properties and had favorable solubility in water. Furthermore, the NCDs had low cytotoxicity and were readily integrated with cytoplasm. This makes them particularly suitable for multicolor bioimaging. Most importantly, NCDs internalized by cancer cells can be detected at four channels simultaneously with flow cytometry, which further demonstrates that the NCDs can be used as multifunctional fluorescent probes for biomedical applications.

  12. Study of the processes of carbonization and oxidation of porous silicon by Raman and IR spectroscopy

    SciTech Connect

    Vasin, A. V.; Okholin, P. N.; Verovsky, I. N.; Nazarov, A. N.; Lysenko, V. S.; Kholostov, K. I. Bondarenko, V. P.; Ishikawa, Y.

    2011-03-15

    Porous silicon layers were produced by electrochemical etching of single-crystal silicon wafers with the resistivity 10 {Omega} cm in the aqueous-alcohol solution of hydrofluoric acid. Raman spectroscopy and infrared absorption spectroscopy are used to study the processes of interaction of porous silicon with undiluted acetylene at low temperatures and the processes of oxidation of carbonized porous silicon by water vapors. It is established that, even at the temperature 550 Degree-Sign C, the silicon-carbon bonds are formed at the pore surface and the graphite-like carbon condensate emerges. It is shown that the carbon condensate inhibits oxidation of porous silicon by water vapors and contributes to quenching of white photoluminescence in the oxidized carbonized porous silicon nanocomposite layer.

  13. The thermal conductivity of carbon coated silicon carbide fibers embedded in a silicon carbide matrix

    SciTech Connect

    Beecher, S.C.; Dinwiddie, R.B.; Lowden, R.A.

    1993-12-31

    The room temperature thermal conductivity has been measured for a series of composite materials composed of carbon coated silicon carbide (SiC) fibers embedded in a SiC matrix. The composite samples consisted of 0/30{degree} bi-directional plain weave Nicalon fibers coated with varying thicknesses of pyrolitic carbon and infiltrated with SiC by the forced flow chemical vapor infiltration process to form the matrix. The fiber volume fraction was held constant at 0.423 {plus_minus} 0.012 and the from 0.03 {mu}m to 0.983 {mu}m, with the fibers of one sample left uncoated. Results transverse to fiber direction show significant differences with the introduction and subsequent increase in the carbon coating thickness. The thermal conductivity decreased for all the coated samples compared to the uncoated sample coating thickness compared to the sample with the thinnest carbon coating.

  14. Effect of W and WC on the oxidation resistance of yttria-doped silicon nitride

    NASA Technical Reports Server (NTRS)

    Schuon, S.

    1980-01-01

    The effect of tungsten and tungsten carbide contamination on the oxidation and cracking in air of yttria-doped silicon nitride ceramics is investigated. Silicon nitride powder containing 8 wt % Y2O3 was doped with 2 wt % W, 4 wt % W, 2 wt % WC or left undoped, and sintered in order to simulate contamination during milling, and specimens were exposed in air to 500, 750 and 1350 C for various lengths of time. Scanning electron and optical microscopy and X-ray diffraction of the specimens in the as-sintered state reveals that the addition of W or WC does not affect the phase relationships in the system, composed of alpha and beta Si3N4, melilite and an amorphous phase. Catastrophic oxidation is observed at 750 C in specimens containing 2 and 4 wt % W, accompanied by the disappearance of alpha Si3N4 and melilite from the structure. At 1350 C, the formation of a protective glassy oxide layer was observed on all specimens without catastrophic oxidation, and it is found that pre-oxidation at 1350 C also improved the oxidation resistance at 750 C of bars doped with 4 wt % W. It is suggested that tungsten contamination from WC grinding balls may be the major cause of the intermediate-temperature cracking and instability frequently observed in Si3N4-8Y2O3.

  15. TiO2-Coated Carbon Nanotube-Silicon Solar Cells with Efficiency of 15%

    PubMed Central

    Shi, Enzheng; Zhang, Luhui; Li, Zhen; Li, Peixu; Shang, Yuanyuan; Jia, Yi; Wei, Jinquan; Wang, Kunlin; Zhu, Hongwei; Wu, Dehai; Zhang, Sen; Cao, Anyuan

    2012-01-01

    Combining carbon nanotubes (CNTs), graphene or conducting polymers with conventional silicon wafers leads to promising solar cell architectures with rapidly improved power conversion efficiency until recently. Here, we report CNT-Si junction solar cells with efficiencies reaching 15% by coating a TiO2 antireflection layer and doping CNTs with oxidative chemicals, under air mass (AM 1.5) illumination at a calibrated intensity of 100 mW/cm2 and an active device area of 15 mm2. The TiO2 layer significantly inhibits light reflectance from the Si surface, resulting in much enhanced short-circuit current (by 30%) and external quantum efficiency. Our method is simple, well-controlled, and very effective in boosting the performance of CNT-Si solar cells. PMID:23181192

  16. Curie Temperature of Silicon Doped Cobalt Ferrite for Use as a Stress Sensor

    NASA Astrophysics Data System (ADS)

    Lo, C. C. H.; Paulsen, J. A.; Ring, A. P.; Snyder, J. E.; Jiles, D. C.

    2003-03-01

    The development of new magnetoelastic materials for use in magnetic stress sensors is of both scientific and technological interest. In previous studies, metal bonded cobalt ferrite composites have been shown to be excellent candidates for this type of sensor. The magnetomechanical hysteresis was found to decrease with temperature, becoming negligible at 60^oC and above. The objective of this study is to try to decrease the magnetomechanical hysterysis at room temperature by lowering the Curie temperature of the sensing material. This was done by altering the chemical composition and sintering temperatures. A series of silicon doped samples with compositions of Co_1+xSi_xFe_2-2xO4 (where x is 0 to 0.6) were prepared. The Curie temperatures of these new materials were measured using a VSM with a high-temperature furnace. The results showed that the Curie temperature decreases with increasing amount of silicon in the cobalt ferrite. It was also found that the final sintering temperature of the silicon doped cobalt ferrite had an effect on the Curie temperature.

  17. Perforated silicon nerve chips with doped registration electrodes: in vitro performance and in vivo operation.

    PubMed

    Wallman, L; Levinsson, A; Schouenborg, J; Holmberg, H; Montelius, L; Danielsen, N; Laurell, T

    1999-09-01

    An in vitro model was developed for the study of signal transduction between a Cu-wire, miming a neural signal source, and recording electrodes on perforated silicon chips. Phosphorous doped electrodes were used to achieve an all silicon device. The model was used to study signal amplitude as a function of the spatial position, and distance to the signal source. Recordings of the signal crosstalk to neighboring electrodes on the chips were made. It was found that the amplitude decreased by a factor of two at a distance of 50 microns between the electrode surface and the signal source. The chip electrode signal crosstalk was found to be 6 dB using an external reference electrode. Improvements were accomplished with an on chip reference electrode giving a crosstalk suppression of 20 dB. Impedance analysis showed that doped silicon electrodes displayed similar characteristics as Cu-electrodes at frequencies above 3 kHz. Sieve electrodes were implanted in the rat sciatic nerve and following a 10-week nerve regeneration period the dorsal and ventral (L5) roots in the spinal cord were stimulated. Compound action potentials were recorded via the chip. Stimulating the regenerated sciatic nerve via the sieve electrode also induced lower leg muscle contraction activity.

  18. Self- and dopant diffusion in extrinsic boron doped isotopically controlled silicon multilayer structures

    SciTech Connect

    Sharp, Ian D.; Bracht, Hartmut A.; Silvestri, Hughes H.; Nicols, Samuel P.; Beeman, Jeffrey W.; Hansen, John L.; Nylandsted Larsen, Arne; Haller, Eugene E.

    2002-04-01

    Isotopically controlled silicon multilayer structures were used to measure the enhancement of self- and dopant diffusion in extrinsic boron doped silicon. {sup 30}Si was used as a tracer through a multilayer structure of alternating natural Si and enriched {sup 28}Si layers. Low energy, high resolution secondary ion mass spectrometry (SIMS) allowed for simultaneous measurement of self- and dopant diffusion profiles of samples annealed at temperatures between 850 C and 1100 C. A specially designed ion- implanted amorphous Si surface layer was used as a dopant source to suppress excess defects in the multilayer structure, thereby eliminating transient enhanced diffusion (TED) behavior. Self- and dopant diffusion coefficients, diffusion mechanisms, and native defect charge states were determined from computer-aided modeling, based on differential equations describing the diffusion processes. We present a quantitative description of B diffusion enhanced self-diffusion in silicon and conclude that the diffusion of both B and Si is mainly mediated by neutral and singly positively charged self-interstitials under p-type doping. No significant contribution of vacancies to either B or Si diffusion is observed.

  19. Development of Iron Doped Silicon Nanoparticles as Bimodal Imaging Agents

    PubMed Central

    Singh, Mani P.; Atkins, Tonya M.; Muthuswamy, Elayaraja; Kamali, Saeed; Tu, Chuqiao; Louie, Angelique Y.; Kauzlarich, Susan M.

    2012-01-01

    We demonstrate the synthesis of water-soluble allylamine terminated Fe doped Si (SixFe) nanoparticles as bimodal agents for optical and magnetic imaging. The preparation involves the synthesis of a single source iron containing precursor, Na4Si4 with x% Fe (x = 1, 5, 10), and its subsequent reaction with NH4Br to produce hydrogen terminated SixFe nanoparticles. The hydrogen-capped nanoparticles are further terminated with allylamine via thermal hydrosilylation. Transmission electron microscopy (TEM) indicates that the average particle diameter is ~3.0±1.0 nm. The Si5Fe nanoparticles show strong photoluminescence quantum yield in water (~ 10 %) with significant T2 contrast (r2/r1value of 4.31). Electron paramagnetic resonance (EPR) and Mössbauer spectroscopies indicate that iron in the nanoparticles is in the +3 oxidation state. Analysis of cytotoxicity using the resazurin assay on HepG2 liver cells indicates that the particles have minimal toxicity. PMID:22616623

  20. Silicon shallow doping by erbium and oxygen recoils implantation

    NASA Astrophysics Data System (ADS)

    Feklistov, K. V.; Cherkov, A. G.; Popov, V. P.

    2016-09-01

    In order to get shallow high doping of Si with optically active complexes ErOn, Er followed by O recoils implantation was realized by means of subsequent Ar+ 250-290 keV implantation with doses 2×1015-1×1016 cm-2 through 50-nm deposited films of Er and then SiO2, accordingly. High Er concentration up to 5×1020 cm-3 to the depth of 10 nm was obtained after implantation. However, about a half of the Er implanted atoms become part of surface SiO2 during post-implantation annealing at 950 °C for 1 h in the N2 ambient under a SiO2 cap. The mechanism of Er segregation into the cap oxide following the moving amorphous-crystalline interface during recrystallization was rejected by the transmission electron microscopy (TEM) analysis. Instead, the other mechanism of immobile Er atoms and redistribution of recoil-implanted O atoms toward cap oxide was proposed. It explains the observed formation of two Er containing phases: Er-Si-O phase with a high O content adjacent to the cap oxide and deeper O depleted Er-Si phase. The correction of heat treatments is proposed in order to avoid the above-mentioned problems.

  1. Structural and emission properties of Tb3+-doped nitrogen-rich silicon oxynitride films

    NASA Astrophysics Data System (ADS)

    Labbé, C.; An, Y.-T.; Zatryb, G.; Portier, X.; Podhorodecki, A.; Marie, P.; Frilay, C.; Cardin, J.; Gourbilleau, F.

    2017-03-01

    Terbium doped silicon oxynitride host matrix is suitable for various applications such as light emitters compatible with CMOS technology or frequency converter systems for photovoltaic cells. In this study, amorphous Tb3+ ion doped nitrogen-rich silicon oxynitride (NRSON) thin films were fabricated using a reactive magnetron co-sputtering method, with various N2 flows and annealing conditions, in order to study their structural and emission properties. Rutherford backscattering (RBS) measurements and refractive index values confirmed the silicon oxynitride nature of the films. An electron microscopy analysis conducted for different annealing temperatures (T A) was also performed up to 1200 °C. Transmission electron microscopy (TEM) images revealed two different sublayers. The top layer showed porosities coming from a degassing of oxygen during deposition and annealing, while in the region close to the substrate, a multilayer-like structure of SiO2 and Si3N4 phases appeared, involving a spinodal decomposition. Upon a 1200 °C annealing treatment, a significant density of Tb clusters was detected, indicating a higher thermal threshold of rare earth (RE) clusterization in comparison to the silicon oxide matrix. With an opposite variation of the N2 flow during the deposition, the nitrogen excess parameter (Nex) estimated by RBS measurements was introduced to investigate the Fourier transform infrared (FTIR) spectrum behavior and emission properties. Different vibration modes of the Si–N and Si–O bonds have been carefully identified from the FTIR spectra characterizing such host matrices, especially the ‘out-of-phase’ stretching vibration mode of the Si–O bond. The highest Tb3+ photoluminescence (PL) intensity was obtained by optimizing the N incorporation and the annealing conditions. In addition, according to these conditions, the integrated PL intensity variation confirmed that the silicon nitride-based host matrix had a higher thermal threshold of rare

  2. Structural and emission properties of Tb(3+)-doped nitrogen-rich silicon oxynitride films.

    PubMed

    Labbé, C; An, Y-T; Zatryb, G; Portier, X; Podhorodecki, A; Marie, P; Frilay, C; Cardin, J; Gourbilleau, F

    2017-03-17

    Terbium doped silicon oxynitride host matrix is suitable for various applications such as light emitters compatible with CMOS technology or frequency converter systems for photovoltaic cells. In this study, amorphous Tb(3+) ion doped nitrogen-rich silicon oxynitride (NRSON) thin films were fabricated using a reactive magnetron co-sputtering method, with various N2 flows and annealing conditions, in order to study their structural and emission properties. Rutherford backscattering (RBS) measurements and refractive index values confirmed the silicon oxynitride nature of the films. An electron microscopy analysis conducted for different annealing temperatures (T A) was also performed up to 1200 °C. Transmission electron microscopy (TEM) images revealed two different sublayers. The top layer showed porosities coming from a degassing of oxygen during deposition and annealing, while in the region close to the substrate, a multilayer-like structure of SiO2 and Si3N4 phases appeared, involving a spinodal decomposition. Upon a 1200 °C annealing treatment, a significant density of Tb clusters was detected, indicating a higher thermal threshold of rare earth (RE) clusterization in comparison to the silicon oxide matrix. With an opposite variation of the N2 flow during the deposition, the nitrogen excess parameter (Nex) estimated by RBS measurements was introduced to investigate the Fourier transform infrared (FTIR) spectrum behavior and emission properties. Different vibration modes of the Si-N and Si-O bonds have been carefully identified from the FTIR spectra characterizing such host matrices, especially the 'out-of-phase' stretching vibration mode of the Si-O bond. The highest Tb(3+) photoluminescence (PL) intensity was obtained by optimizing the N incorporation and the annealing conditions. In addition, according to these conditions, the integrated PL intensity variation confirmed that the silicon nitride-based host matrix had a higher thermal threshold of rare earth

  3. Ablation of carbon-doped liquid propellant in laser plasma propulsion

    NASA Astrophysics Data System (ADS)

    Zheng, Z. Y.; Liang, T.; Zhang, S. Q.; Gao, L.; Gao, H.; Zhang, Z. L.

    2016-04-01

    Carbon-doped liquid glycerol ablated by nanosecond pulse laser is investigated in laser plasma propulsion. It is found that the propulsion is much more correlated with the carbon content. The doped carbon can change the laser intensity and laser focal position so as to reduce the splashing quantity of the glycerol. Less consumption of the liquid volume results in a high specific impulse.

  4. Doped-carbon composites, synthesizing methods and applications of the same

    DOEpatents

    Viswanathan, Tito

    2017-05-09

    A method of synthesizing a doped carbon composite includes preparing a solution having a carbon source material and a heteroatom containing additive, evaporating the solution to yield a plurality of powders, and subjecting the plurality of powders to a heat treatment for a duration of time effective to produce the doped carbon composite.

  5. Ag doped silicon nitride nanocomposites for embedded plasmonics

    SciTech Connect

    Bayle, M.; Bonafos, C. Benzo, P.; Benassayag, G.; Pécassou, B.; Carles, R.; Khomenkova, L.; Gourbilleau, F.

    2015-09-07

    The localized surface plasmon-polariton resonance (LSPR) of noble metal nanoparticles (NPs) is widely exploited for enhanced optical spectroscopies of molecules, nonlinear optics, photothermal therapy, photovoltaics, or more recently in plasmoelectronics and photocatalysis. The LSPR frequency depends not only of the noble metal NP material, shape, and size but also of its environment, i.e., of the embedding matrix. In this paper, Ag-NPs have been fabricated by low energy ion beam synthesis in silicon nitride (SiN{sub x}) matrices. By coupling the high refractive index of SiN{sub x} to the relevant choice of dielectric thickness in a SiN{sub x}/Si bilayer for an optimum antireflective effect, a very sharp plasmonic optical interference is obtained in mid-range of the visible spectrum (2.6 eV). The diffusion barrier property of the host SiN{sub x} matrix allows for the introduction of a high amount of Ag and the formation of a high density of Ag-NPs that nucleate during the implantation process. Under specific implantation conditions, in-plane self-organization effects are obtained in this matrix that could be the result of a metastable coarsening regime.

  6. Ag doped silicon nitride nanocomposites for embedded plasmonics

    NASA Astrophysics Data System (ADS)

    Bayle, M.; Bonafos, C.; Benzo, P.; Benassayag, G.; Pécassou, B.; Khomenkova, L.; Gourbilleau, F.; Carles, R.

    2015-09-01

    The localized surface plasmon-polariton resonance (LSPR) of noble metal nanoparticles (NPs) is widely exploited for enhanced optical spectroscopies of molecules, nonlinear optics, photothermal therapy, photovoltaics, or more recently in plasmoelectronics and photocatalysis. The LSPR frequency depends not only of the noble metal NP material, shape, and size but also of its environment, i.e., of the embedding matrix. In this paper, Ag-NPs have been fabricated by low energy ion beam synthesis in silicon nitride (SiNx) matrices. By coupling the high refractive index of SiNx to the relevant choice of dielectric thickness in a SiNx/Si bilayer for an optimum antireflective effect, a very sharp plasmonic optical interference is obtained in mid-range of the visible spectrum (2.6 eV). The diffusion barrier property of the host SiNx matrix allows for the introduction of a high amount of Ag and the formation of a high density of Ag-NPs that nucleate during the implantation process. Under specific implantation conditions, in-plane self-organization effects are obtained in this matrix that could be the result of a metastable coarsening regime.

  7. Fluorine doping into diamond-like carbon coatings inhibits protein adsorption and platelet activation.

    PubMed

    Hasebe, Terumitsu; Yohena, Satoshi; Kamijo, Aki; Okazaki, Yuko; Hotta, Atsushi; Takahashi, Koki; Suzuki, Tetsuya

    2007-12-15

    The first major event when a medical device comes in contact with blood is the adsorption of plasma proteins. Protein adsorption on the material surface leads to the activation of the blood coagulation cascade and the inflammatory process, which impair the lifetime of the material. Various efforts have been made to minimize protein adsorption and platelet adhesion. Recently, diamond-like carbon (DLC) has received much attention because of their antithrombogenicity. We recently reported that coating silicon substrates with fluorine-doped diamond-like carbon (F-DLC) drastically suppresses platelet adhesion and activation. Here, we evaluated the protein adsorption on the material surfaces and clarified the relationship between protein adsorption and platelet behaviors, using polycarbonate and DLC- or F-DLC-coated polycarbonate. The adsorption of albumin and fibrinogen were assessed using a colorimetric protein assay, and platelet adhesion and activation were examined using a differential interference contrast microscope. A higher ratio of albumin to fibrinogen adsorption was observed on F-DLC than on DLC and polycarbonate films, indicating that the F-DLC film should prevent thrombus formation. Platelet adhesion and activation on the F-DLC films were more strongly suppressed as the amount of fluorine doping was increased. These results show that the F-DLC coating may be useful for blood-contacting devices. (c) 2007 Wiley Periodicals, Inc. J Biomed Mater Res, 2007.

  8. Electron microscopy analysis of crystalline silicon islands formed on screen-printed aluminum-doped p-type silicon surfaces

    SciTech Connect

    Bock, Robert; Schmidt, Jan; Brendel, Rolf

    2008-08-15

    The origin of a not yet understood concentration peak, which is generally measured at the surface of aluminum-doped p{sup +} regions produced in a conventional screen-printing process is investigated. Our findings provide clear experimental evidence that the concentration peak is due to the microscopic structures formed at the silicon surface during the firing process. To characterize the microscopic nature of the islands (lateral dimensions of 1-3 {mu}m) and line networks of self-assembled nanostructures (lateral dimension of {<=}50 nm), transmission electron microscopy, scanning electron microscopy, scanning transmission electron microscopy, and energy dispersive x-ray analysis are combined. Aluminum inclusions are detected 50 nm below the surface of the islands and crystalline aluminum precipitates of {<=}7 nm in diameter are found within the bulk of the islands. In addition, aluminum inclusions (lateral dimension of {approx}30 nm) are found within the bulk of the self-assembled line networks.

  9. Silicon Carbide Derived Carbons: Experiments and Modeling

    SciTech Connect

    Kertesz, Miklos

    2011-02-28

    The main results of the computational modeling was: 1. Development of a new genealogical algorithm to generate vacancy clusters in diamond starting from monovacancies combined with energy criteria based on TBDFT energetics. The method revealed that for smaller vacancy clusters the energetically optimal shapes are compact but for larger sizes they tend to show graphitized regions. In fact smaller clusters of the size as small as 12 already show signatures of this graphitization. The modeling gives firm basis for the slit-pore modeling of porous carbon materials and explains some of their properties. 2. We discovered small vacancy clusters and their physical characteristics that can be used to spectroscopically identify them. 3. We found low barrier pathways for vacancy migration in diamond-like materials by obtaining for the first time optimized reaction pathways.

  10. Use of Functionalized Carbon Nanotubes for Covalent Attachment of Nanotubes to Silicon

    NASA Technical Reports Server (NTRS)

    Tour, James M.; Dyke, Christopher A.; Maya, Francisco; Stewart, Michael P.; Chen, Bo; Flatt, Austen K.

    2012-01-01

    The purpose of the invention is to covalently attach functionalized carbon nanotubes to silicon. This step allows for the introduction of carbon nanotubes onto all manner of silicon surfaces, and thereby introduction of carbon nano - tubes covalently into silicon-based devices, onto silicon particles, and onto silicon surfaces. Single-walled carbon nanotubes (SWNTs) dispersed as individuals in surfactant were functionalized. The nano - tube was first treated with 4-t-butylbenzenediazonium tetrafluoroborate to give increased solubility to the carbon nanotube; the second group attached to the sidewall of the nanotube has a silyl-protected terminal alkyne that is de-protected in situ. This gives a soluble carbon nanotube that has functional groups appended to the sidewall that can be attached covalently to silicon. This reaction was monitored by UV/vis/NJR to assure direct covalent functionalization.

  11. Mechanical and tribological behavior of silicon nitride and silicon carbon nitride coatings for total joint replacements.

    PubMed

    Pettersson, M; Tkachenko, S; Schmidt, S; Berlind, T; Jacobson, S; Hultman, L; Engqvist, H; Persson, C

    2013-09-01

    Total joint replacements currently have relatively high success rates at 10-15 years; however, increasing ageing and an active population places higher demands on the longevity of the implants. A wear resistant configuration with wear particles that resorb in vivo can potentially increase the lifetime of an implant. In this study, silicon nitride (SixNy) and silicon carbon nitride (SixCyNz) coatings were produced for this purpose using reactive high power impulse magnetron sputtering (HiPIMS). The coatings are intended for hard bearing surfaces on implants. Hardness and elastic modulus of the coatings were evaluated by nanoindentation, cohesive, and adhesive properties were assessed by micro-scratching and the tribological performance was investigated in a ball-on-disc setup run in a serum solution. The majority of the SixNy coatings showed a hardness close to that of sintered silicon nitride (~18 GPa), and an elastic modulus close to that of cobalt chromium (~200 GPa). Furthermore, all except one of the SixNy coatings offered a wear resistance similar to that of bulk silicon nitride and significantly higher than that of cobalt chromium. In contrast, the SixCyNz coatings did not show as high level of wear resistance.

  12. Electrical transport in transverse direction through silicon carbon alloy multilayers containing regular size silicon quantum dots

    NASA Astrophysics Data System (ADS)

    Mandal, Aparajita; Kole, Arindam; Dasgupta, Arup; Chaudhuri, Partha

    2016-11-01

    Electrical transport in the transverse direction has been studied through a series of hydrogenated silicon carbon alloy multilayers (SiC-MLs) deposited by plasma enhanced chemical vapor deposition method. Each SiC-ML consists of 30 cycles of the alternating layers of a nearly amorphous silicon carbide (a-SiC:H) and a microcrystalline silicon carbide (μc-SiC:H) that contains high density of silicon quantum dots (Si-QDs). A detailed investigation by cross sectional TEM reveals preferential growth of densely packed Si-QDs of regular sizes ∼4.8 nm in diameter in a vertically aligned columnar structure within the SiC-ML. More than six orders of magnitude increase in transverse current through the SiC-ML structure were observed for decrease in the a-SiC:H layer thickness from 13 nm to 2 nm. The electrical transport mechanism was established to be a combination of grain boundary or band tail hopping and Frenkel-Poole (F-P) type conduction depending on the temperature and externally applied voltage ranges. Evaluation of trap concentration within the multilayer structures from the fitted room temperature current voltage characteristics by F-P function shows reduction up-to two orders of magnitude indicating an improvement in the short range order in the a-SiC:H matrix for decrease in the thickness of a-SiC:H layer.

  13. Carbon Nanotube Charge Collectors in Doped Hybrid Perovskite Solar Cells

    NASA Astrophysics Data System (ADS)

    Olds, Zane; Haroldson, Ross; Mielczarek, Kamil; Zakhidov, Anvar

    2015-03-01

    Hybrid organo-metallic solar cells based on perovskite crystals have had steadily improved power conversion efficiencies over the past two years, and within this period have achieved efficiencies over 19%. We show that additions of Metal-Halide dopants, such as Cobalt (II) Iodide or Indium and Bismuth materials, can cause substitutional doping at the Lead atom. This may result in structural distortions (as in isovalent Co-doping) within the lattice causing change in the spatial distribution of charge carriers. We show that Co-doping results in an increased open circuit voltage upon light soaking due to possible higher charge accumulation. We also have investigated effects of p-doping the hole transport layer. We also incorporate composite sheets of MW carbon nanotubes and silver nanowires as charge collectors. These sheets provide a transparent and flexible electrode with lower sheet resistance due to integration of Ag nanowires. This has an effect on the work function of the sheet, making it more versatile as an electrode for use in a variety of device structures. This allows us a semi-transparent perovskite device, where incident light can be absorbed from either side of the device. This is beneficial towards achieving multi-junction perovskite solar cells. Undergraduate Research Assistant

  14. Large-scale atomistic density functional theory calculations of phosphorus-doped silicon quantum bits

    NASA Astrophysics Data System (ADS)

    Greenman, Loren; Whitley, Heather D.; Whaley, K. Birgitta

    2013-10-01

    We present density functional theory calculations of phosphorus dopants in bulk silicon and of several properties relating to their use as spin qubits for quantum computation. Rather than a mixed pseudopotential or a Heitler-London approach, we have used an explicit treatment for the phosphorus donor and examined the detailed electronic structure of the system as a function of the isotropic doping fraction, including lattice relaxation due to the presence of the impurity. Doping electron densities (ρdoped-ρbulk) and spin densities (ρ↑-ρ↓) are examined in order to study the properties of the dopant electron as a function of the isotropic doping fraction. Doping potentials (Vdoped-Vbulk) are also calculated for use in calculations of the scattering cross sections of the phosphorus dopants, which are important in the understanding of electrically detected magnetic resonance experiments. We find that the electron density around the dopant leads to nonspherical features in the doping potentials, such as trigonal lobes in the (001) plane at energy scales of +12 eV near the nucleus and of -700 meV extending away from the dopants. These features are generally neglected in effective mass theory and will affect the coupling between the donor electron and the phosphorus nucleus. Our density functional calculations reveal detail in the densities and potentials of the dopants which are not evident in calculations that do not include explicit treatment of the phosphorus donor atom and relaxation of the crystal lattice. These details can also be used to parametrize tight-binding models for simulation of large-scale devices.

  15. A novel high-temperature carbon-based superconductor: B-doped Q-carbon

    NASA Astrophysics Data System (ADS)

    Bhaumik, Anagh; Sachan, Ritesh; Narayan, Jagdish

    2017-07-01

    Following a brief report on high-temperature superconductivity in B-doped Q-carbon [Bhaumik et al., ACS Nano 11(6), 5351-5357 (2017)], we present detailed structure-property correlations to understand the origin of superconductivity in strongly bonded lightweight materials and methods to further enhance the superconducting transition temperature (Tc). Nanosecond melting of carbon in a super undercooled state and rapid quenching result in a strongly bonded unique phase of B-doped Q-carbon. The temperature-dependent resistivity and magnetic susceptibility measurements demonstrate type II superconductivity in this material with a transition temperature of 36.0 ± 0.5 K and an upper critical field of 5.4 T at ˜0 K. It has also been shown that in B-doped Q-carbon, the upper critical magnetic field (Hc2(T)) follows Hc2(0) [1-(T/Tc)2.1] temperature dependence and is consistent with the Bardeen-Cooper-Schrieffer formalism. In the present study, B-doped Q-carbon thin films are formed on sapphire substrates by employing pulsed laser annealing (PLA) using a nanosecond excimer laser. This process involves the rapid quenching of highly undercooled melt of homogenously mixed B and C. Through the structure-property correlation measurements in B-doped Q-carbon, we estimate a higher electronic density of states near the Fermi level. Higher density of states near the Fermi-level along with higher Debye temperature and phonon frequency are responsible for the enhanced Tc. As a result of rapid melting and quenching, we can achieve 17.0 ± 1.0 or higher atomic % of B in the electrically active sites of Q-carbon which leads to the formation of shallow electronic states near the valence band maximum. From the critical current density versus field moments, the value of critical current density (Jc (2T)) in B-doped Q-carbon at 21 K is calculated as 4.3 × 107 A cm-2, which indicates that this novel material can be used for the persistent mode of operation in MRI and nuclear magnetic

  16. Fundamental limitations imposed by high doping on the performance of pn junction silicon solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.; Li, S. S.; Sah, C. T.

    1975-01-01

    Fundamental limitations imposed on the performance of silicon junction solar cells by physical mechanisms accompanying high doping are described. The one-dimensional mechanisms divide into two broad categories: those associated with band-gap shrinkage and those associated with interband transition rates. By extending the traditional method of analysis and comparing with measurement, it is shown that the latter kind of mechanism dominates in determining the open-circuit voltage in a one-dimensional model of a 0.1 ohm-cm cell at 300 K. As an alternative dominant mechanism, a three-dimensional model involving thermodynamically stable clusters of impurities in the highly-doped diffused layer is suggested.

  17. Simultaneous measurement of doping concentration and carrier lifetime in silicon using terahertz time-domain transmission

    NASA Astrophysics Data System (ADS)

    Lenz, M.; Matheisen, C.; Nagel, M.; Knoch, J.

    2017-02-01

    In this work, we present a measurement approach enabling the simultaneous determination of sheet resistance and carrier lifetime in semiconductor samples. It is based on a classic Terahertz (THz) time-domain transmission spectroscopy scheme extended by quasi-steady state optical excitation. The carrier lifetime is determined by contactless THz probing of the increase in sheet conductance associated with quasi-steady-state excitation. Combining a successive etch-back of the surface with repeated THz measurements yields a depth profile of the doping concentration and the carrier lifetime, which is important for the optimization of the emitter of solar cells, for instance. The viability of our approach is demonstrated by investigating a phosphorous doped emitter of a silicon solar cell with the THz approach and comparing the results with electrochemical capacitance voltage measurements.

  18. Highly end-doped silicon nanowires for field-effect transistors on flexible substrates

    NASA Astrophysics Data System (ADS)

    Celle, Caroline; Carella, Alexandre; Mariolle, Denis; Chevalier, Nicolas; Rouvière, Emmanuelle; Simonato, Jean-Pierre

    2010-05-01

    We report on the VLS (vapour-liquid-solid) fabrication and characterization of in situ axially doped silicon nanowires (SiNWs) at both ends, and on their integration into a bottom gate-top contact geometry on both rigid and flexible substrates to realize field-effect transistors (FETs). To improve contact resistance between SiNWs and source/drain electrodes, we axially tuned the level of doping at both ends of the SiNWs by sequential in situ addition of PH3. Characterisation of SiNWs by scanning spreading resistance microscopy in the device configuration allowed us to determine precisely the different sections of the SiNWs. The transfer to flexible substrates still allowed for workable FET structures. Transistors with electron mobilities exceeding 120 cm2 V-1 s-1, Ion/Ioff ratios greater than 107 and ambipolar behaviour were achieved.

  19. Fundamental limitations imposed by high doping on the performance of pn junction silicon solar cells

    NASA Technical Reports Server (NTRS)

    Lindholm, F. A.; Li, S. S.; Sah, C. T.

    1975-01-01

    Fundamental limitations imposed on the performance of silicon junction solar cells by physical mechanisms accompanying high doping are described. The one-dimensional mechanisms divide into two broad categories: those associated with band-gap shrinkage and those associated with interband transition rates. By extending the traditional method of analysis and comparing with measurement, it is shown that the latter kind of mechanism dominates in determining the open-circuit voltage in a one-dimensional model of a 0.1 ohm-cm cell at 300 K. As an alternative dominant mechanism, a three-dimensional model involving thermodynamically stable clusters of impurities in the highly-doped diffused layer is suggested.

  20. Silicon-Doped Titanium Dioxide Nanotubes Promoted Bone Formation on Titanium Implants

    PubMed Central

    Zhao, Xijiang; Wang, Tao; Qian, Shi; Liu, Xuanyong; Sun, Junying; Li, Bin

    2016-01-01

    While titanium (Ti) implants have been extensively used in orthopaedic and dental applications, the intrinsic bioinertness of untreated Ti surface usually results in insufficient osseointegration irrespective of the excellent biocompatibility and mechanical properties of it. In this study, we prepared surface modified Ti substrates in which silicon (Si) was doped into the titanium dioxide (TiO2) nanotubes on Ti surface using plasma immersion ion implantation (PIII) technology. Compared to TiO2 nanotubes and Ti alone, Si-doped TiO2 nanotubes significantly enhanced the expression of genes related to osteogenic differentiation, including Col-I, ALP, Runx2, OCN, and OPN, in mouse pre-osteoblastic MC3T3-E1 cells and deposition of mineral matrix. In vivo, the pull-out mechanical tests after two weeks of implantation in rat femur showed that Si-doped TiO2 nanotubes improved implant fixation strength by 18% and 54% compared to TiO2-NT and Ti implants, respectively. Together, findings from this study indicate that Si-doped TiO2 nanotubes promoted the osteogenic differentiation of osteoblastic cells and improved bone-Ti integration. Therefore, they may have considerable potential for the bioactive surface modification of Ti implants. PMID:26927080

  1. Silicon-Doped Titanium Dioxide Nanotubes Promoted Bone Formation on Titanium Implants.

    PubMed

    Zhao, Xijiang; Wang, Tao; Qian, Shi; Liu, Xuanyong; Sun, Junying; Li, Bin

    2016-02-26

    While titanium (Ti) implants have been extensively used in orthopaedic and dental applications, the intrinsic bioinertness of untreated Ti surface usually results in insufficient osseointegration irrespective of the excellent biocompatibility and mechanical properties of it. In this study, we prepared surface modified Ti substrates in which silicon (Si) was doped into the titanium dioxide (TiO₂) nanotubes on Ti surface using plasma immersion ion implantation (PIII) technology. Compared to TiO₂ nanotubes and Ti alone, Si-doped TiO₂ nanotubes significantly enhanced the expression of genes related to osteogenic differentiation, including Col-I, ALP, Runx2, OCN, and OPN, in mouse pre-osteoblastic MC3T3-E1 cells and deposition of mineral matrix. In vivo, the pull-out mechanical tests after two weeks of implantation in rat femur showed that Si-doped TiO₂ nanotubes improved implant fixation strength by 18% and 54% compared to TiO₂-NT and Ti implants, respectively. Together, findings from this study indicate that Si-doped TiO₂ nanotubes promoted the osteogenic differentiation of osteoblastic cells and improved bone-Ti integration. Therefore, they may have considerable potential for the bioactive surface modification of Ti implants.

  2. Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters

    SciTech Connect

    Cuevas, A.; Giroult-Matlakowski, G.; DuBols, C.; Basore, P.A.; King, R.R.

    1995-01-01

    An analytical procedure to extract the surface recombination velocity of the SiO{sub 2}/n type silicon interface, S{sub p}, from PCD measurements of emitter recombination currents is described. The analysis shows that the extracted values of S{sub p} are significantly affected by the assumed material parameters for highly doped silicon, t{sub p}, {mu}{sub p} and {Delta}E{sub g}{sup app}. Updated values for these parameters are used to obtain the dependence of S{sub p} on the phosphorus concentration, N{sub D}, using both previous and new experimental data. The new evidence supports the finding that S{sub p} increases strongly with N{sub D}.

  3. Insight into the mechanisms of chemical doping of graphene on silicon carbide

    NASA Astrophysics Data System (ADS)

    Giannazzo, Filippo

    2016-02-01

    Graphene (Gr) is currently the object of intense research investigations, owing to its rich physics and wide potential for applications. In particular, epitaxial Gr on silicon carbide (SiC) holds great promise for the development of new device concepts based on the vertical current transport at Gr/SiC heterointerface. Precise tailoring of Gr workfunction (WF) represents a key requirement for these device structures. In this context, Günes et al (2015 Nanotechnology 26 445702) recently reported a straightforward approach for WF modulation in epitaxial Gr on silicon carbide by using nitric acid solutions at different dilutions. This paper provides a deep insight on the peculiar mechanisms of chemical doping of epitaxial Gr on 4H-SiC(0001), using several characterization techniques (Raman, UPS, AFM) and density functional theory calculations. The relevance of these findings and their perspective applications in emerging device concepts based on monolithic integration of Gr and SiC will be discussed.

  4. Distinctive features of boron distribution in silicon under high-dose ion-implantation doping

    SciTech Connect

    Galiev, G.B.; Saraikin, V.V.; Begishev, A.R.; Mokerov, V.G.

    1987-03-01

    The method of ion-implantation doping (IID) is used extensively in the fabrication of semiconductor devices as it allows different dopants to be introduced into a semiconductor in a controlled manner. The authors present their results of measurements of boron distribution profiles in silicon after IID, using secondary-ion mass spectroscopy (SIMS), and electroreflection spectroscopy. The authors studied samples of p/sup +/-p structures, where the p/sup +/ layer was obtained by IID of boron with different values of energy and dose into single-crystal silicon with an initial p-type carrier concentration of 1.6 x 10/sup 16/ cm/sup -3/ and (111) orientation.

  5. Stable and wavelength-tunable silicon-micro-ring-resonator based erbium-doped fiber laser.

    PubMed

    Yang, L G; Yeh, C H; Wong, C Y; Chow, C W; Tseng, F G; Tsang, H K

    2013-02-11

    In this work, we propose and demonstrate a stable and wavelength-tunable erbium-doped fiber (EDF) ring laser. Here, a silicon-on-insulator (SOI)-based silicon-micro-ring-resonator (SMRR) is used as the wavelength selective element inside the fiber ring cavity. A uniform period grating coupler (GC) is used to couple between the SMRR and single mode fiber (SMF) and serves also as a polarization dependent element in the cavity. The output lasing wavelength of the proposed fiber laser can be tuned at a tuning step of 2 nm (defined by the free spectral range (FSR) of the SMRR) in a bandwidth of 35.2 nm (1532.00 to 1567.20 nm), which is defined by the gain of the EDF. The optical-signal-to-noise-ratio (OSNR) of each lasing wavelength is larger than 42.0 dB. In addition, the output stabilities of power and wavelength are also discussed.

  6. Insight into the mechanisms of chemical doping of graphene on silicon carbide.

    PubMed

    Giannazzo, Filippo

    2016-02-19

    Graphene (Gr) is currently the object of intense research investigations, owing to its rich physics and wide potential for applications. In particular, epitaxial Gr on silicon carbide (SiC) holds great promise for the development of new device concepts based on the vertical current transport at Gr/SiC heterointerface. Precise tailoring of Gr workfunction (WF) represents a key requirement for these device structures. In this context, Günes et al (2015 Nanotechnology 26 445702) recently reported a straightforward approach for WF modulation in epitaxial Gr on silicon carbide by using nitric acid solutions at different dilutions. This paper provides a deep insight on the peculiar mechanisms of chemical doping of epitaxial Gr on 4H-SiC(0001), using several characterization techniques (Raman, UPS, AFM) and density functional theory calculations. The relevance of these findings and their perspective applications in emerging device concepts based on monolithic integration of Gr and SiC will be discussed.

  7. Manufacture of silicon-based devices having disordered sulfur-doped surface layers

    DOEpatents

    Carey, III, James Edward; Mazur, Eric

    2008-04-08

    The present invention provides methods of fabricating a radiation-absorbing semiconductor wafer by irradiating at least one surface location of a silicon substrate, e.g., an n-doped crystalline silicon, by a plurality of temporally short laser pulses, e.g., femtosecond pulses, while exposing that location to a substance, e.g., SF.sub.6, having an electron-donating constituent so as to generate a substantially disordered surface layer (i.e., a microstructured layer) that incorporates a concentration of that electron-donating constituent, e.g., sulfur. The substrate is also annealed at an elevated temperature and for a duration selected to enhance the charge carrier density in the surface layer. For example, the substrate can be annealed at a temperature in a range of about 700 K to about 900 K.

  8. Structure and luminescence evolution of annealed Europium-doped silicon oxides films.

    PubMed

    Li, Dongsheng; Zhang, Xuwu; Jin, Lu; Yang, Deren

    2010-12-20

    Europium (Eu)-doped silicon oxide films with Eu concentrations from 2.1 to 4.7 at. % were deposited by electron beam evaporation. The Eu related luminescence from the films was found to be sensitive to the evolution of film microstructures at different annealing temperatures. Luminescence centers in the films changed from defects of silicon oxides to 4f(6)5d-4f(7)(8S(7/2)) transition of Eu2+ after the films annealed in N2 at temperature higher than 800 °C. The evolution of luminescence centers was attributed to the formation of europium silicate (EuSiO3), which was confirmed by x-ray photoelectron spectroscopy, x-ray diffraction, time resolved photoluminescence, and transmission electron microscopy.

  9. Ab initio calculations of the electronic structure of silicon nanocrystals doped with shallow donors (Li, P)

    SciTech Connect

    Kurova, N. V. Burdov, V. A.

    2013-12-15

    The results of ab initio calculations of the electronic structure of Si nanocrystals doped with shallow donors (Li, P) are reported. It is shown that phosphorus introduces much more significant distortions into the electronic structure of the nanocrystal than lithium, which is due to the stronger central cell potential of the phosphorus ion. It is found that the Li-induced splitting of the ground state in the conduction band of the nanocrystal into the singlet, doublet, and triplet retains its inverse structure typical for bulk silicon.

  10. Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Zhou, Dayu; Müller, J.; Xu, Jin; Knebel, S.; Bräuhaus, D.; Schröder, U.

    2012-02-01

    Silicon doped hafnium oxide thin films were recently discovered to exhibit ferroelectricity. In the present study, metal-ferroelectric-metal capacitors with Si:HfO2 thin films as ferroelectric material and TiN as electrodes have been characterized with respect to capacitance and current density as functions of temperature and applied voltage. Polarity asymmetry of the frequency dependent coercive field was explained by interfacial effects. No ferroelectric-paraelectric phase transition was observed at temperatures up to 478 K. Clear distinctions between current evolutions with or without polarization switching were correlated to the time competition between the measurement and the response of relaxation mechanisms.

  11. Phonon characteristics and photoluminescence of bamboo structured silicon-doped boron nitride multiwall nanotubes

    NASA Astrophysics Data System (ADS)

    Xu, Shifeng; Fan, Yi; Luo, Jingsong; Zhang, Ligong; Wang, Wenquan; Yao, Bin; An, Linan

    2007-01-01

    Bamboo structured silicon-doped boron nitride multiwall nanotubes are synthesized via catalyst-assisted pyrolysis of a boron-containing polymeric precursor. The nanotubes are characterized using transmission electron microscopy, x-ray diffraction, Raman, and Fourier-transformed infrared spectroscope. The results suggest that the Si dopants cause significant changes in the structure and phonon characteristics of the nanotubes as compared to pure boron nitride nanotubes. A broad photoluminescence band ranging between 500 and 800nm is observed from the nanotubes, which is attributed to Si dopants. Study on temperature dependence of emission intensity suggests that the thermal activation energy of the nonradiative recombination process is 35meV.

  12. Comparison of beryllium oxide and pyrolytic graphite crucibles for boron doped silicon epitaxy

    SciTech Connect

    Ali, Dyan; Richardson, Christopher J. K.

    2012-11-15

    This article reports on the comparison of beryllium oxide and pyrolytic graphite as crucible liners in a high-temperature effusion cell used for boron doping in silicon grown by molecular beam epitaxy. Secondary ion mass spectroscopy analysis indicates decomposition of the beryllium oxide liner, leading to significant incorporation of beryllium and oxygen in the grown films. The resulting films are of poor crystal quality with rough surfaces and broad x-ray diffraction peaks. Alternatively, the use of pyrolytic graphite crucible liners results in higher quality films.

  13. Physically sound parameterization of incomplete ionization in aluminum-doped silicon

    NASA Astrophysics Data System (ADS)

    Steinkemper, Heiko; Altermatt, Pietro P.; Hermle, Martin

    2016-12-01

    Incomplete ionization is an important issue when modeling silicon devices featuring aluminum-doped p+ (Al-p+) regions. Aluminum has a rather deep state in the band gap compared to boron or phosphorus, causing strong incomplete ionization. In this paper, we considerably improve our recent parameterization [Steinkemper et al., J. Appl. Phys. 117, 074504 (2015)]. On the one hand, we found a fundamental criterion to further reduce the number of free parameters in our fitting procedure. And on the other hand, we address a mistake in the original publication of the incomplete ionization formalism in Altermatt et al., J. Appl. Phys. 100, 113715 (2006).

  14. Observation of transparency of Erbium-doped silicon nitride in photonic crystal nanobeam cavities.

    PubMed

    Gong, Yiyang; Makarova, Maria; Yerci, Selcuk; Li, Rui; Stevens, Martin J; Baek, Burm; Nam, Sae Woo; Dal Negro, Luca; Vuckovic, Jelena

    2010-06-21

    One dimensional nanobeam photonic crystal cavities are fabricated in an Er-doped amorphous silicon nitride layer. Photoluminescence from the cavities around 1.54 microm is studied at cryogenic and room temperatures at different optical pump powers. The resonators demonstrate Purcell enhanced absorption and emission rates, also confirmed by time resolved measurements. Resonances exhibit linewidth narrowing with pump power, signifying absorption bleaching and the onset of stimulated emission in the material at both 5.5 K and room temperature. We estimate from the cavity linewidths that Er has been pumped to transparency at the cavity resonance wavelength.

  15. Fracture of yttria-doped, sintered reaction-bonded silicon nitride

    NASA Technical Reports Server (NTRS)

    Govila, R. K.; Mangels, J. A.; Baer, J. R.

    1985-01-01

    Flexural strength of an yttria-doped, slip-cast, sintered reaction-bonded silicon nitride was evaluated as a function of temperature (20 to 1400 C in air), applied stress, and time. Static oxidation at 700 to 1400 C was investigated in detail; in tests at 1000 C in air, the material showed anomalous weight gain. Flexural stress-rupture testing at 800 to 1200 C in air indicated that the material is susceptible to stress-enhanced oxidation and early failure. Fractographic evidence for time-dependent and -independent failures is presented.

  16. Fracture of yttria-doped, sintered reaction-bonded silicon nitride

    NASA Technical Reports Server (NTRS)

    Govila, R. K.; Mangels, J. A.; Baer, J. R.

    1985-01-01

    Flexural strength of an yttria-doped, slip-cast, sintered reaction-bonded silicon nitride was evaluated as a function of temperature (20 to 1400 C in air), applied stress, and time. Static oxidation at 700 to 1400 C was investigated in detail; in tests at 1000 C in air, the material showed anomalous weight gain. Flexural stress-rupture testing at 800 to 1200 C in air indicated that the material is susceptible to stress-enhanced oxidation and early failure. Fractographic evidence for time-dependent and -independent failures is presented.

  17. Electrical detection of coherent nuclear spin oscillations in phosphorus-doped silicon using pulsed ENDOR.

    PubMed

    Hoehne, Felix; Dreher, Lukas; Huebl, Hans; Stutzmann, Martin; Brandt, Martin S

    2011-05-06

    We demonstrate the electrical detection of pulsed X-band electron nuclear double resonance (ENDOR) in phosphorus-doped silicon at 5 K. A pulse sequence analogous to Davies ENDOR in conventional electron spin resonance is used to measure the nuclear spin transition frequencies of the (31)P nuclear spins, where the (31)P electron spins are detected electrically via spin-dependent transitions through Si/SiO(2) interface states, thus not relying on a polarization of the electron spin system. In addition, the electrical detection of coherent nuclear spin oscillations is shown, demonstrating the feasibility to electrically read out the spin states of possible nuclear spin qubits.

  18. Electrical noise characteristics of a doped silicon microcantilever heater-thermometer

    NASA Astrophysics Data System (ADS)

    Corbin, Elise A.; King, William P.

    2011-12-01

    We measure the electrical noise characteristics of doped silicon microcantilevers during cantilever self-heating over the temperature range 296-781 K. The dominant noise source is 1/f below about 10 kHz, while at higher frequency, the dominant noise source is Johnson noise. The 1/f noise matches the Hooge model. The noise floor is about 10 nV/Hz1/2 and depends upon temperature, matching the theoretical Johnson noise. The Johnson noise-limited temperature resolution is about 1 μK/Hz1/2.

  19. Hydrogen passivation of interstitial iron in boron-doped multicrystalline silicon during annealing

    SciTech Connect

    Liu, AnYao; Sun, Chang; Macdonald, Daniel

    2014-11-21

    Effective hydrogenation of interstitial iron in boron-doped multicrystalline silicon wafers is reported. The multicrystalline silicon wafers were annealed with plasma-enhanced chemical vapour deposited silicon nitride films, at temperatures of 400 °C – 900 °C and for times from minutes to hours. At low temperatures where a combined effect of hydrogenation and precipitation of dissolved Fe is expected, results show that the hydrogenation process dominates the effect of precipitation. The concentrations of dissolved interstitial iron reduce by more than 90% after a 30-min anneal at temperatures between 600 and 900 °C. The most effective reduction occurs at 700 °C, where 99% of the initial dissolved iron is hydrogenated after 30 min. The results show that the observed reductions in interstitial Fe concentrations are not caused by the internal gettering of Fe at structural defects or by an enhanced diffusivity of Fe due to the presence of hydrogen. The hydrogenation process is conjectured to be the pairing of positively charged iron with negatively charged hydrogen, forming less recombination active Fe-H complexes in silicon.

  20. Growth and characterization of indium doped silicon single crystals at industrial scale

    NASA Astrophysics Data System (ADS)

    Haringer, Stephan; Giannattasio, Armando; Alt, Hans Christian; Scala, Roberto

    2016-03-01

    Indium is becoming one of the most important dopant species for silicon crystals used in photovoltaics. In this work we have investigated the behavior of indium in silicon crystals grown by the Czochralski pulling process. The experiments were performed by growing 200 mm crystals, which is a standard diameter for large volume production, thus the data reported here are of technological interest for the large scale production of indium doped p-type silicon. The indium segregation coefficient and the evaporation rate from the silicon melt have been calculated to be 5 × 10-4 ± 3% and 1.6 × 10-4 cm·s-1, respectively. In contrast to previous works the indium was introduced in liquid phase and the efficiency was compared with that deduced by other authors, using different methods. In addition, the percentage of electrically active indium at different dopant concentrations is calculated and compared with the carrier concentration at room temperature, measured by four-point bulk method.

  1. Carbon nanotube growth activated by quantum-confined silicon nanocrystals

    NASA Astrophysics Data System (ADS)

    Mariotti, D.; Švrček, V.; Mathur, A.; Dickinson, C.; Matsubara, K.; Kondo, M.

    2013-03-01

    We report on the use of silicon nanocrystals (Si-ncs) to activate nucleation and growth of carbon nanotubes (CNTs) without using any metal catalyst. Si-ncs with different surface characteristics have been exposed to the same CH4 low-pressure plasma treatment producing quite different results. Specifically, Si-ncs prepared by laser ablation in water have contributed to the formation of micrometre-sized silicon spherical particles. On the other hand, Si-ncs prepared by electrochemical etching did not induce any specific growth while the third type of Si-ncs, prepared by electrochemical etching and treated by a laser fragmentation process, induced the growth of multi-walled CNTs. The different outcomes of the same plasma process are attributed to the diverse surface features presented by the Si-ncs.

  2. Amorphous silicon-carbon alloys and amorphous carbon from direct methane and ethylene activation by ECR

    SciTech Connect

    Conde, J.P.; Chu, V.; Giorgis, F.; Pirri, C.F.; Arekat, S.

    1997-07-01

    Hydrogenated amorphous silicon-carbon alloys are prepared using electron-cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition. Hydrogen is introduced into the source resonance cavity as an excitation gas. Silane is introduced in the main chamber in the vicinity of the plasma stream, whereas the carbon source gases, methane or ethylene, are introduced either with the silane or with the hydrogen as excitation gases. The effect of the type of carbon-source gas, excitation gas mixture and silane-to-carbon source gas flow ratio on the deposition rate, bandgap, subgap density of states, spin density and hydrogen evolution are studied.

  3. Proton and deuteron nuclear magnetic resonance studies of amorphous hydrogenated silicon, carbon, and carbon alloys

    NASA Astrophysics Data System (ADS)

    Kernan, Mary Jane Wurth

    Despite the profound influence of semiconductors and the changes they have produced, many fundamental questions remain unanswered. We have used proton and deuteron nuclear magnetic resonance (NMR) to explore the role of hydrogens in amorphous silicon and amorphous carbon and carbon alloy films. In the carbon films, dipolar filtering techniques reveal a two-component shifted lineshape in the proton NMR spectra and deuteron magnetic resonance (DMR) data demonstrate a feedstock gas dependence in the film deposition process. In these measurements, DMR is used to examine the effect of hydrogen on the photovoltaic properties of amorphous silicon thin films. We have measured the effects of photoillumination on amorphous silicon, particularly with respect to the process of metastable defect formation (the Staebler-Wronski effect). The creation and passivation of dangling silicon bonds is observed and quantified. We report large-scale light-induced atomic rearrangements which produce shifts and broadenings of the DMR lineshapes. The deuterium NMR lineshape component most affected by atomic rearrangements is a broad central feature which is shown to be molecular in origin. This spectral feature includes hydrogens trapped and immobile on surfaces created by strains and dislocations in the material. Narrowing of the lineshape at elevated temperatures indicates motion with a small activation energy. The substantial population represented by this feature is shown to account for at least 15% of the total hydrogens in high-quality amorphous silicon samples.

  4. Theoretical investigation of GaN carbon doped

    NASA Astrophysics Data System (ADS)

    Espitia Rico, M. J.; Moreno Armenta, M. G.; Rodríguez, J. A.; Takeuchi, N.

    2016-02-01

    In this work we used first principles calculations in the frame of density functional theory (DFT) in order to study the structural and electronic properties of GaN doped with carbon. The computational calculations were carried out by a method based on plane waves pseudopotentials, as implemented in the Quantum Espresso code. In the wurtzite type GaN supercell the nitrogen atoms were replaced by carbon atoms (C by N) and then also the gallium atoms by carbon atoms (C by Ga). The carbon concentrations in the GaN volume was set as x=25, 50 y 75%. For each concentration x of carbon the formation energy was calculated for the substitutions C by N and CxGa. We found that it is more energetically favourable that the carbon atoms occupy the positions of the nitrogen atoms (C by N), because in all the x concentrations of carbon the formation energies were lower than that in the substitutions (C by Ga). It was found that the new compounds CxGaN1-x have higher bulk moduli. So they are very rigid. This property makes them good candidates for applications in hard coatings or devices for high power and temperatures. Analysis of the density of states show that the new CxGaN1-x ternary compound have metallic behaviour that comes essentially from the hybridization states N-p and C-p cross the Fermi level.

  5. Different roles of carbon and silicon vacancies in silicon carbide bulks and nanowires

    NASA Astrophysics Data System (ADS)

    Li, Shu-Long; Li, Ya-Lin; Li, Yan-Jing; Gong, Pei; Fang, Xiao-Yong

    2017-09-01

    We investigated the effects of carbon and silicon vacancies on the electronic structure and optical properties of pure silicon carbide (SiC) bulks and nanowires (NWs) based on density functional theory in CASTEP module. Calculation results showed that vacancies only slightly influenced structure and stability, particularly those of NWs. By contrast, effects on electronic function and optical properties were more notable. We found that the energy gaps of SiC bulks and NWs decreased with increased vacancies redistributing the electron density, which critically contributed to the formation of C-C and Si-Si bonds. The dielectric loss of SiC bulks and NWs in the ultraviolet region was primarily attributed to conductivity, whereas the loss in this region was due to the polarization of dangling bonds.

  6. Low-energy tetrahedral polymorphs of carbon, silicon, and germanium

    NASA Astrophysics Data System (ADS)

    Mujica, Andrés; Pickard, Chris J.; Needs, Richard J.

    2015-06-01

    Searches for low-energy tetrahedral polymorphs of carbon and silicon have been performed using density functional theory computations and the ab initio random structure searching approach. Several of the hypothetical phases obtained in our searches have enthalpies that are lower or comparable to those of other polymorphs of group 14 elements that have either been experimentally synthesized or recently proposed as the structure of unknown phases obtained in experiments, and should thus be considered as particularly interesting candidates. A structure of P b a m symmetry with 24 atoms in the unit cell was found to be a low-energy, low-density metastable polymorph in carbon, silicon, and germanium. In silicon, P b a m is found to have a direct band gap at the zone center with an estimated value of 1.4 eV, which suggests applications as a photovoltaic material. We have also found a low-energy chiral framework structure of P 41212 symmetry with 20 atoms per cell containing fivefold spirals of atoms, whose projected topology is that of the so-called Cairo-type two-dimensional pentagonal tiling. We suggest that P 41212 is a likely candidate for the structure of the unknown phase XIII of silicon. We discuss P b a m and P 41212 in detail, contrasting their energetics and structures with those of other group 14 elements, particularly the recently proposed P 42/n c m structure, for which we also provide a detailed interpretation as a network of tilted diamondlike tetrahedra.

  7. Kohn anomalies and non-adiabaticity in doped carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Saitta, A. Marco; Caudal, Nicolas; Lazzeri, Michele; Mauri, Francesco

    2007-03-01

    The tangential vibrational modes of metallic single-walled carbon nanotubes (SWNTs) are thought to be characterized by Kohn anomalies resulting from the combination of their intrinsic one-dimensional nature and a significant electron- phonon coupling. These properties are modified by the doping- induced tuning of the Fermi energy level ɛF, obtained through the intercalation of SWNTs with alkali atoms or the application of a gate potential. We present a Density- Functional Theory (DFT) study of the vibrational properties of a (n,n) metallic SWNT as a function of electronic doping. For such study, we use, as in standard DFT calculations of vibrational properties, the Born-Oppenheimer (BO) approximation, but we also use time-dependent perturbation theory to explore non-adiabatic effects beyond this approximation. We compare our results with existing measurements and suggest features to be explored in future experiments.

  8. Very high carbon delta -doping concentration in AlxGa1 - xAs grown by metalorganic vapor phase epitaxy using trimethylaluminum as a doping precursor

    NASA Astrophysics Data System (ADS)

    Li, G.; Petravić, M.; Jagadish, C.

    1996-04-01

    Using trimethylaluminum (TMAl) or trimethylgallium (TMGa) as a doping precursor, carbon δ-doped AlxGa1-xAs has been grown in metalorganic vapor phase epitaxy. Compared to TMGa, TMAl exhibits very high carbon δ-doping efficiency. The best hole profile of carbon δ-doped Al0.3Ga0.7As grown at 580 °C using TMAl as a doping precursor has a peak hole density of 1.6×1019 cm-3 for a full width at half-maximum of 85 Å with most of the incorporated carbon atoms being electrically active. When TMGa is used as the doping precursor, the hole density of carbon δ-doped AlxGa1-xAs significantly increases with an increase of the Al mole fraction. By comparison, the use of TMAl almost induces independence of the hole density on the Al mole fraction. The hole density of carbon δ-doped Al0.3Ga0.7As weakly increases when reducing the δ-doping temperature regardless of the doping precursors. The hole density of carbon δ-doped Al0.3Ga0.7As grown at 580 °C is proportionally associated with the moles of TMGa or TMAl totally input during a δ-doping step. Using heavily carbon δ-doped layers in Al0.3Ga0.7As, a carbon δ-doped pipi doping superlattice possessing a bulk-doped-like hole profile with an average hole density of 1.1×1019 cm-3 is therefore demonstrated as an alternative with unique advantages over other conventional carbon bulk-doping approaches.

  9. Influence of the doping level on the porosity of silicon nanowires prepared by metal-assisted chemical etching

    NASA Astrophysics Data System (ADS)

    Geyer, Nadine; Wollschläger, Nicole; Fuhrmann, Bodo; Tonkikh, Alexander; Berger, Andreas; Werner, Peter; Jungmann, Marco; Krause-Rehberg, Reinhard; Leipner, Hartmut S.

    2015-06-01

    A systematic method to control the porosity of silicon nanowires is presented. This method is based on metal-assisted chemical etching (MACE) and takes advantage of an HF/H2O2 etching solution and a silver catalyst in the form of a thin patterned film deposited on a doped silicon wafer. It is found that the porosity of the etched nanowires can be controlled by the doping level of the wafer. For low doping concentrations, the wires are primarily crystalline and surrounded by only a very thin layer of porous silicon (pSi) layer, while for highly doped silicon, they are porous in their entire volume. We performed a series of controlled experiments to conclude that there exists a well-defined critical doping concentration separating the crystalline and porous regimes. Furthermore, transmission electron microscopy investigations showed that the pSi has also a crystalline morphology on a length scale smaller than the pore size, determined from positron annihilation lifetime spectroscopy to be mesoscopic. Based on the experimental evidence, we devise a theoretical model of the pSi formation during MACE and apply it for better control of the nanowire morphology.

  10. Influence of the doping level on the porosity of silicon nanowires prepared by metal-assisted chemical etching.

    PubMed

    Geyer, Nadine; Wollschläger, Nicole; Fuhrmann, Bodo; Tonkikh, Alexander; Berger, Andreas; Werner, Peter; Jungmann, Marco; Krause-Rehberg, Reinhard; Leipner, Hartmut S

    2015-06-19

    A systematic method to control the porosity of silicon nanowires is presented. This method is based on metal-assisted chemical etching (MACE) and takes advantage of an HF/H2O2 etching solution and a silver catalyst in the form of a thin patterned film deposited on a doped silicon wafer. It is found that the porosity of the etched nanowires can be controlled by the doping level of the wafer. For low doping concentrations, the wires are primarily crystalline and surrounded by only a very thin layer of porous silicon (pSi) layer, while for highly doped silicon, they are porous in their entire volume. We performed a series of controlled experiments to conclude that there exists a well-defined critical doping concentration separating the crystalline and porous regimes. Furthermore, transmission electron microscopy investigations showed that the pSi has also a crystalline morphology on a length scale smaller than the pore size, determined from positron annihilation lifetime spectroscopy to be mesoscopic. Based on the experimental evidence, we devise a theoretical model of the pSi formation during MACE and apply it for better control of the nanowire morphology.

  11. Chemical vapor deposition of epitaxial silicon-germanium from silane and germane. 2: In situ boron, arsenic, and phosphorus doping

    SciTech Connect

    Jang, S.M.; Liao, K.; Reif, R.

    1995-10-01

    The authors have studied in situ boron, arsenic, and phosphorus doping of epitaxial silicon and Si{sub 1{minus}x}Ge{sub x} layers grown on silicon substrates at 620 C and at very low pressure ({approximately}7 mTorr) with silane, germane, and diborane, and arsine and phosphine diluted in silane as gas sources. Structural quality was characterized by cross-sectional transmission electron microscopy and the germanium and dopant depth profiles were probed by secondary ion mass spectrometry. The results confirmed tat strained Si/Si{sub 1{minus}x}Ge{sub x}/Si heterostructures with 13 atom percent germanium doped to 2{times}10{sup 20} boron atom/cm{sup 3} and 5{times}10{sup 19} arsenic atom/cm{sup 3} have been achieved. Phosphorus doped Si{sub 1{minus}x}Ge{sub x}/Si multilayer structures with highly perfect surface Si{sub 1{minus}x}Ge{sub x} and silicon layers were also obtained. The addition of arsine and phosphine were found to severely degrade the growth rates of both silicon and Si{sub 1{minus}x}Ge{sub x} layers. Germanium incorporation appeared to enhance the n-type doping process by compensating the depressed growth rate resulted for surface poisoning and by improving the abruptness of dopant profiles. However, deposition of Si{sub 1{minus}x}Ge{sub x} was not greatly affected by boron doping.

  12. Properties of nitrogen-doped amorphous hydrogenated carbon films

    SciTech Connect

    Amir, O.; Kalish, R. )

    1991-11-01

    Nitrogen-containing hydrogenated amorphous carbon (a-C:H(N)) films are grown from a dc plasma of a N{sub 2}+C{sub 6}H{sub 6} gas mixture. By varying the N{sub 2} fraction in this mixture films with different amounts of N are produced. The actual amount of nitrogen in the {ital a}-C:H(N) films is determined by nuclear reaction analysis and by Auger electron spectroscopy profiling. The nitrogen concentration in the films grows exponentially with nitrogen content in the gas mixture reaching concentrations as high as 10 at.% for the films grown from a N{sub 2}-rich gas mixture (N{sub 2}/(N{sub 2}+C{sub 6}H{sub 6})=0.75). The electrical and structural properties of the N{sub 2}-doped films are studied by performing electrical conductivity, thermopower (TP), optical absorption, and electron-paramagnetic resonance measurements. Films with low ({lt}1 at.%) nitrogen content exhibit fairly high resistivities, have an optical gap of 1 eV, are rich with dangling bonds (5{times}10{sup 20} cm{sup {minus}3}) and their thermopower is positive and in the mV/K regime, indicating conductivity in the valence band tail. However, with increased N doping, the resistivity decreases and the optical band gap shrinks and reached zero for the highest doped film. The TPs for films containing more than 1 at.% are in the {mu}V/K range, indicating hopping conductivity around the Fermi level. The results of all measurements are consistent with the model of Robertson for the electrical structure of amorphous hydrogenated carbon and for the proposed doping mechanism in this material.

  13. Novel techniques for selective doping of silicon carbide for device applications

    NASA Astrophysics Data System (ADS)

    Krishnan, Bharat

    Superior properties of Silicon Carbide (SiC), such as wide bandgap, high breakdown field and high thermal conductivity, have made it the frontrunner to replace Silicon for applications requiring high breakdown strength, mechanical and radiation hardness. Commercial SiC devices are already available, although their expected performance has not yet been realized due to a few problems related to device fabrication technologies, such as selective doping. This work explores non-traditional techniques for SiC doping (and selective doping in particular) based on previously unknown types of defect reactions in SiC and novel epitaxial growth techniques, which offer advantages over currently available technologies. Recent developments in SiC epitaxial growth techniques at MSU have enabled the growth of high quality SiC epitaxial layers at record low temperatures of 1,300°C. Lower growth temperatures have enabled highly doped epilayers for device applications. Prototypes of SiC PiN diodes fabricated, demonstrated low values of the series resistance associated with anodes grown by the low temperature epitaxial growth technique. At room temperature, 100 mum-diameter diodes with a forward voltage of 3.75 V and 3.23V at 1,000 A/cm2 before and after annealing were achieved. The reverse breakdown voltage was more than 680 V on average, even without surface passivation or edge termination. Reduced growth temperatures also enabled the possibility of selective epitaxial growth (SEG) of SiC with traditional masks used in the SEG in Si technology. Previously, SEG of SiC was impossible without high temperature masks. Good quality, defect free, selectively grown 4H-SiC epilayers were obtained using SiO2 mask. Nitrogen doped selectively grown epilayers were also obtained, which were almost completely ohmic, indicating doping exceeding 1x1019 cm-3. Moreover, conductivity modulation via defect reactions in SiC has been reported as a part of this work for the first time. The approach is

  14. Tractable Chemical Models for CVD of Silicon and Carbon

    NASA Technical Reports Server (NTRS)

    Blanquet, E.; Gokoglu, S. A.

    1993-01-01

    Tractable chemical models are validated for the CVD of silicon and carbon. Dilute silane (SiH4) and methane (CH4) in hydrogen are chosen as gaseous precursors. The chemical mechanism for each systems Si and C is deliberately reduced to three reactions in the models: one in the gas phase and two at the surface. The axial-flow CVD reactor utilized in this study has well-characterized flow and thermal fields and provides variable deposition rates in the axial direction. Comparisons between the experimental and calculated deposition rates are made at different pressures and temperatures.

  15. The Oxidation of CVD Silicon Carbide in Carbon Dioxide

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.; Nguyen, QuynchGiao N.

    1997-01-01

    Chemically-vapor-deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO2) at temperatures of 1200-1400 C for times between 100 and 500 hours at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate limiting kinetic laws are discussed. Oxidation of SiC by CO2 is negligible compared to the rates measured for other oxidants typically found in combustion environments: oxygen and water vapor.

  16. Microstructure, toughness and flexural strength of self-reinforced silicon nitride ceramics doped with yttrium oxide and ytterbium oxide.

    PubMed

    Zheng, Y. S.; Knowles, K. M.; Vieira, J. M.; Lopes, A. B.; Oliveira, F. J.

    2001-02-01

    Self-reinforced silicon nitride ceramics with additions of either yttrium oxide or ytterbium oxide have been investigated at room temperature after various processing heat treatments. Devitrification of the intergranular phase in these materials is very sensitive to the heat treatment used during processing and does not necessarily improve their strength and toughness. Hot-pressed ceramics without a subsequent devitrification heat treatment were the strongest. The ytterbium oxide-doped silicon nitride ceramics were consistently tougher, but less strong, than the yttrium oxide-doped silicon nitride ceramics. In all the ceramics examined, the fracture toughness showed evidence for R-curve behaviour. This was most significant in pressureless sintered ytterbium oxide-doped silicon nitride ceramics. A number of toughening mechanisms, including crack deflection, bridging, and fibre-like grain pull-out, were observed during microstructural analysis of the ceramics. In common with other silicon nitride-based ceramics, thin amorphous films were found at the grain boundaries in each of the ceramics examined. Arrays of dislocations left in the elongated silicon nitride grains after processing were found to belong to the {101;0}<0001> primary slip system.

  17. N-Doped Carbon Xerogels as Pt Support for the Electro-Reduction of Oxygen

    PubMed Central

    Alegre, Cinthia; Gálvez, María E.; Baquedano, Estela; Moliner, Rafael; Aricò, Antonino S.

    2017-01-01

    Durability and limited catalytic activity are key impediments to the commercialization of polymer electrolyte fuel cells. Carbon materials employed as catalyst support can be doped with different heteroatoms, like nitrogen, to improve both catalytic activity and durability. Carbon xerogels are nanoporous carbons that can be easily synthesized in order to obtain N-doped materials. In the present work, we introduced melamine as a carbon xerogel precursor together with resorcinol for an effective in-situ N doping (3–4 wt % N). Pt nanoparticles were supported on nitrogen-doped carbon xerogels and their activity for the oxygen reduction reaction (ORR) was evaluated in acid media along with their stability. Results provide new evidences of the type of N groups aiding the activity of Pt for the ORR and of a remarkable stability for N-doped carbon-supported Pt catalysts, providing appropriate physico-chemical features. PMID:28926984

  18. Synthesis of nitrogen-doped carbon nanostructures from polyurethane sponge for bioimaging and catalysis.

    PubMed

    Yang, Yong; Zhang, Jingchao; Zhuang, Jing; Wang, Xun

    2015-08-07

    A facile and environmentally friendly method was developed for the fabrication of N-doped carbon nanomaterials by hydrothermal treatment using polyurethane (PU) sponge as a carbon source. We have demonstrated that the hydrothermal decomposition of PU sponge involves top-down hydrolysis and bottom-up polymerization processes for the synthesis of N-doped carbon dots (N-CDs). Fluorescence spectroscopy and cytotoxicity studies indicated that these highly-soluble N-CDs show excellent photoluminescence properties and low cytotoxicity, and can be used as good probes for cellular imaging. Additionally, the N-doped hollow carbon nanostructures can be designed using a simple template method. The prepared N-doped double-shelled hollow carbon nanotubes exhibited excellent ORR electrocatalytic activity and superior durability. Indeed, our method described here can provide an efficient way to synthesize N-doped carbon-based materials for a broad range of applications.

  19. Modeling the Microstructure Curvature of Boron-Doped Silicon in Bulk Micromachined Accelerometer

    PubMed Central

    Zhou, Wu; Yu, Huijun; Peng, Bei; Shen, Huaqin; He, Xiaoping; Su, Wei

    2013-01-01

    Microstructure curvature, or buckling, is observed in the micromachining of silicon sensors because of the doping of impurities for realizing certain electrical and mechanical processes. This behavior can be a key source of error in inertial sensors. Therefore, identifying the factors that influence the buckling value is important in designing MEMS devices. In this study, the curvature in the proof mass of an accelerometer is modeled as a multilayered solid model. Modeling is performed according to the characteristics of the solid diffusion mechanism in the bulk-dissolved wafer process (BDWP) based on the self-stopped etch technique. Moreover, the proposed multilayered solid model is established as an equivalent composite structure formed by a group of thin layers that are glued together. Each layer has a different Young’s modulus value and each undergoes different volume shrinkage strain owing to boron doping in silicon. Observations of five groups of proof mass blocks of accelerometers suggest that the theoretical model is effective in determining the buckling value of a fabricated structure. PMID:28809305

  20. Modeling the Microstructure Curvature of Boron-Doped Silicon in Bulk Micromachined Accelerometer.

    PubMed

    Zhou, Wu; Yu, Huijun; Peng, Bei; Shen, Huaqin; He, Xiaoping; Su, Wei

    2013-01-15

    Microstructure curvature, or buckling, is observed in the micromachining of silicon sensors because of the doping of impurities for realizing certain electrical and mechanical processes. This behavior can be a key source of error in inertial sensors. Therefore, identifying the factors that influence the buckling value is important in designing MEMS devices. In this study, the curvature in the proof mass of an accelerometer is modeled as a multilayered solid model. Modeling is performed according to the characteristics of the solid diffusion mechanism in the bulk-dissolved wafer process (BDWP) based on the self-stopped etch technique. Moreover, the proposed multilayered solid model is established as an equivalent composite structure formed by a group of thin layers that are glued together. Each layer has a different Young's modulus value and each undergoes different volume shrinkage strain owing to boron doping in silicon. Observations of five groups of proof mass blocks of accelerometers suggest that the theoretical model is effective in determining the buckling value of a fabricated structure.

  1. Green emission in carbon doped ZnO films

    SciTech Connect

    Tseng, L. T.; Yi, J. B. Zhang, X. Y.; Xing, G. Z.; Luo, X.; Li, S.; Fan, H. M.; Herng, T. S.; Ding, J.; Ionescu, M.

    2014-06-15

    The emission behavior of C-doped ZnO films, which were prepared by implantation of carbon into ZnO films, is investigated. Orange/red emission is observed for the films with the thickness of 60–100 nm. However, the film with thickness of 200 nm shows strong green emission. Further investigations by annealing bulk ZnO single crystals under different environments, i.e. Ar, Zn or C vapor, indicated that the complex defects based on Zn interstitials are responsible for the strong green emission. The existence of complex defects was confirmed by electron spin resonance (ESR) and low temperature photoluminescence (PL) measurement.

  2. Gas Sensors Based on Coated and Doped Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Li, Jing; Meyyappan, Meyya

    2008-01-01

    Efforts are underway to develop inexpensive, low-power electronic sensors, based on single-walled carbon nanotubes (SWCNTs), for measuring part-per-million and part-per-billion of selected gases (small molecules) at room temperature. Chemically unmodified SWCNTs are mostly unresponsive to typical gases that one might wish to detect. However, the electrical resistances of SWCNTs can be made to vary with concentrations of gases of interest by coating or doping the SWCNTs with suitable materials. Accordingly, the basic idea of the present development efforts is to incorporate thus-treated SWCNTs into electronic devices that measure their electrical resistances.

  3. Synthesis of nitrogen-doped carbon nanostructures from polyurethane sponge for bioimaging and catalysis

    NASA Astrophysics Data System (ADS)

    Yang, Yong; Zhang, Jingchao; Zhuang, Jing; Wang, Xun

    2015-07-01

    A facile and environmentally friendly method was developed for the fabrication of N-doped carbon nanomaterials by hydrothermal treatment using polyurethane (PU) sponge as a carbon source. We have demonstrated that the hydrothermal decomposition of PU sponge involves top-down hydrolysis and bottom-up polymerization processes for the synthesis of N-doped carbon dots (N-CDs). Fluorescence spectroscopy and cytotoxicity studies indicated that these highly-soluble N-CDs show excellent photoluminescence properties and low cytotoxicity, and can be used as good probes for cellular imaging. Additionally, the N-doped hollow carbon nanostructures can be designed using a simple template method. The prepared N-doped double-shelled hollow carbon nanotubes exhibited excellent ORR electrocatalytic activity and superior durability. Indeed, our method described here can provide an efficient way to synthesize N-doped carbon-based materials for a broad range of applications.A facile and environmentally friendly method was developed for the fabrication of N-doped carbon nanomaterials by hydrothermal treatment using polyurethane (PU) sponge as a carbon source. We have demonstrated that the hydrothermal decomposition of PU sponge involves top-down hydrolysis and bottom-up polymerization processes for the synthesis of N-doped carbon dots (N-CDs). Fluorescence spectroscopy and cytotoxicity studies indicated that these highly-soluble N-CDs show excellent photoluminescence properties and low cytotoxicity, and can be used as good probes for cellular imaging. Additionally, the N-doped hollow carbon nanostructures can be designed using a simple template method. The prepared N-doped double-shelled hollow carbon nanotubes exhibited excellent ORR electrocatalytic activity and superior durability. Indeed, our method described here can provide an efficient way to synthesize N-doped carbon-based materials for a broad range of applications. Electronic supplementary information (ESI) available. See DOI

  4. Sub-ambient carbon dioxide adsorption properties of nitrogen doped graphene

    SciTech Connect

    Tamilarasan, P.; Ramaprabhu, Sundara

    2015-04-14

    Carbon dioxide adsorption on carbon surface can be enhanced by doping the surface with heterogeneous atoms, which can increase local surface affinity. This study presents the carbon dioxide adsorption properties of nitrogen doped graphene at low pressures (<100 kPa). Graphene was exposed to nitrogen plasma, which dopes nitrogen atoms into carbon hexagonal lattice, mainly in pyridinic and pyrrolic forms. It is found that nitrogen doping significantly improves the CO{sub 2} adsorption capacity at all temperatures, due to the enrichment of local Lewis basic sites. In general, isotherm and thermodynamic parameters suggest that doped nitrogen sites have nearly same adsorption energy of surface defects and residual functional groups. The isosteric heat of adsorption remains in physisorption range, which falls with surface coverage, suggesting the distribution of magnitude of adsorption energy. The absolute values of isosteric heat and entropy of adsorption are slightly increased upon nitrogen doping.

  5. Rare-earth-ion-doped waveguide lasers on a silicon chip

    NASA Astrophysics Data System (ADS)

    Pollnau, Markus

    2015-03-01

    Rare-earth-ion-doped materials are of high interest as amplifiers and lasers in integrated optics. Their longer excited-state lifetimes and the weaker refractive-index change accompanied with rare-earth-ion excitation compared to electron-hole pairs in III-V semiconductors provide spatially and temporally stable optical gain, allowing for high-speed amplification and narrow-linewidth lasers. Amorphous Al2O3 deposited onto thermally oxidized silicon wafers offers the advantage of integration with silicon photonics and electronics. Layer deposition by RF reactive co-sputtering and micro-structuring by chlorine-based reactive-ion etching provide low-loss channel waveguides. With erbium doping, we improved the gain to 2 dB/cm at 1533 nm and a gain bandwidth of 80 nm. The gain is limited by migration-accelerated energy-transfer upconversion and a fast quenching process. Since stimulated emission is even faster than this quenching process, lasers are only affected in terms of their threshold, allowing us to demonstrate diode-pumped micro-ring, distributed-feedback (DFB), and distributed-Bragg-reflector (DBR) lasers in Al2O3:Er3+ and Al2O3:Yb3+ on a silicon chip. Surface-relief Bragg gratings were patterned by laser-interference lithography. Monolithic DFB and DBR cavities with Q-factors of 1.35×106 were realized. In an Er-doped DFB laser, single-longitudinal-mode operation at 1545 nm was achieved with a linewidth of 1.7 kHz, corresponding to a laser Q-factor of 1.14×1011. Yb-doped DFB and DBR lasers were demonstrated at 1020 nm with output powers of 55 mW and a slope efficiency of 67% versus launched pump power. A dual-phaseshift, dual-wavelength laser was achieved and a stable microwave signal at ~15 GHz was created via the heterodyne photo-detection of the two laser wavelengths.

  6. Silicon Oxycarbide/Carbon Nanohybrids with Tiny Silicon Oxycarbide Particles Embedded in Free Carbon Matrix Based on Photoactive Dental Methacrylates.

    PubMed

    Wang, Meimei; Xia, Yonggao; Wang, Xiaoyan; Xiao, Ying; Liu, Rui; Wu, Qiang; Qiu, Bao; Metwalli, Ezzeldin; Xia, Senlin; Yao, Yuan; Chen, Guoxin; Liu, Yan; Liu, Zhaoping; Meng, Jian-Qiang; Yang, Zhaohui; Sun, Ling-Dong; Yan, Chun-Hua; Müller-Buschbaum, Peter; Pan, Jing; Cheng, Ya-Jun

    2016-06-08

    A new facile scalable method has been developed to synthesize silicon oxycarbide (SiOC)/carbon nanohybrids using difunctional dental methacrylate monomers as solvent and carbon source and the silane coupling agent as the precursor for SiOC. The content (from 100% to 40% by mass) and structure (ratio of disordered carbon over ordered carbon) of the free carbon matrix have been systematically tuned by varying the mass ratio of methacryloxypropyltrimethoxysilane (MPTMS) over the total mass of the resin monomers from 0.0 to 6.0. Compared to the bare carbon anode, the introduction of MPTMS significantly improves the electrochemical performance as a lithium-ion battery anode. The initial and cycled discharge/charge capacities of the SiOC/C nanohybrid anodes reach maximum with the MPTMS ratio of 0.50, which displays very good rate performance as well. Detailed structures and electrochemical performance as lithium-ion battery anodes have been systematically investigated. The structure-property correlation and corresponding mechanism have been discussed.

  7. Preparation and characterization of silicone rubber/functionalized carbon nanotubes composites via in situ polymerization.

    PubMed

    Kim, Hun-Sik; Kwon, Soon-Min; Lee, Kwang Hee; Yoon, Jin-San; Jin, Hyoung-Joon

    2008-10-01

    The dispersion of the nanometer-sized multiwalled carbon nanotubes (MWCNTs) in a silicone matrix leads to a marked improvement in the properties of the silicone based composite. In this study, silicone rubber/MWCNTs nanocomposite was successfully prepared by functionalizing MWCNTs with silane compound. This allowed a homogeneous dispersion of functionalized MWCNTs in the silicone matrix. The morphology of functionalized MWCNTs was observed using transmission electron microscopy and scanning electron microscopy with energy dispersive spectrometer. The silicone rubber/functionalized MWCNTs (1 wt%) composites showed that the tensile strength and modulus of the composites improved dramatically by about 50% and 28%, respectively, compared with silicone rubber.

  8. Metal-doped single-walled carbon nanotubes and production thereof

    DOEpatents

    Dillon, Anne C.; Heben, Michael J.; Gennett, Thomas; Parilla, Philip A.

    2007-01-09

    Metal-doped single-walled carbon nanotubes and production thereof. The metal-doped single-walled carbon nanotubes may be produced according to one embodiment of the invention by combining single-walled carbon nanotube precursor material and metal in a solution, and mixing the solution to incorporate at least a portion of the metal with the single-walled carbon nanotube precursor material. Other embodiments may comprise sputter deposition, evaporation, and other mixing techniques.

  9. Theory of nitrogen doping of carbon nanoribbons: Edge effects

    SciTech Connect

    Jiang, Jie; Turnbull, Joseph; Lu, Wenchang; Boguslawski, Piotr; Bernholc, J.

    2012-01-01

    Nitrogen doping of a carbon nanoribbon is profoundly affected by its one-dimensional character, symmetry, and interaction with edge states. Using state-of-the-art ab initio calculations, including hybrid exact-exchange density functional theory, we find that, for N-doped zigzag ribbons, the electronic properties are strongly dependent upon sublattice effects due to the non-equivalence of the two sublattices. For armchair ribbons, N-doping effects are different depending upon the ribbon family: for families 2 and 0, the N-induced levels are in the conduction band, while for family 1 the N levels are in the gap. In zigzag nanoribbons, nitrogen close to the edge is a deep center, while in armchair nanoribbons its behavior is close to an effective-mass-like donor with the ionization energy dependent on the value of the band gap. In chiral nanoribbons, we find strong dependence of the impurity level and formation energy upon the edge position of the dopant, while such site-specificity is not manifested in the magnitude of the magnetization.

  10. Theory of nitrogen doping of carbon nanoribbons: Edge effects

    DOE PAGES

    Jiang, Jie; Turnbull, Joseph; Lu, Wenchang; ...

    2012-01-01

    Nitrogen doping of a carbon nanoribbon is profoundly affected by its one-dimensional character, symmetry, and interaction with edge states. Using state-of-the-art ab initio calculations, including hybrid exact-exchange density functional theory, we find that, for N-doped zigzag ribbons, the electronic properties are strongly dependent upon sublattice effects due to the non-equivalence of the two sublattices. For armchair ribbons, N-doping effects are different depending upon the ribbon family: for families 2 and 0, the N-induced levels are in the conduction band, while for family 1 the N levels are in the gap. In zigzag nanoribbons, nitrogen close to the edge is amore » deep center, while in armchair nanoribbons its behavior is close to an effective-mass-like donor with the ionization energy dependent on the value of the band gap. In chiral nanoribbons, we find strong dependence of the impurity level and formation energy upon the edge position of the dopant, while such site-specificity is not manifested in the magnitude of the magnetization.« less

  11. Effect of silicon on the spheroidization of cementite in hypereutectoid high carbon chromium bearing steels

    NASA Astrophysics Data System (ADS)

    Kim, Kwan-Ho; Lee, Jae-Seung; Lee, Duk-Lak

    2010-12-01

    The effect of silicon on the spheroidization of cementite in hypereutectoid high carbon chromium bearing steels has been investigated on the basis of microstructural analysis and thermodynamic calculations. The results showed that an increase of silicon content in high carbon chromium bearing steels retards the spheoridization of cementite. The thermodynamic calculations revealed that the shrinkage of the austenite phase field in bearing steels with increasing silicon content gave rise to an increase of volume fraction of cementite at an annealing temperature, possibly resulting in incomplete spheroidization. Furthermore, due to the low solubility of silicon in cementite, an increase of silicon content can raise the activity or chemical potential of carbon atoms in austenite at the austenite/cementite interfaces. Consequently, the difference in chemical potential of carbon atoms at the interfaces would be reduced with increasing silicon content, causing a decrease of the driving force for their diffusion from cementite to austenite.

  12. Delta-Doped High Purity Silicon UV-NIR CCDs with High QE and Low Dark Current

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael; Blacksberg, Jordana; Nikzad, Shouleh; Elliott, S. Tom; Holland, Steve; Bebek, Chris; Scowen, Paul; Veach, Todd

    2006-01-01

    Delta doping process was developed on p-channel CCDs for MIDEX-Orion and JDEM/SNAP and was applied to large format (2k x4k) CCDs. Delta doping is applied to fully-fabricated CCDs (complete with Al metallization). High QE and low dark current is demonstrated with delta doped p-channel CCDs. In-house AR coating is demonstrated. Advantages include: Delta doping enables high QE and stability across the entire spectral range attainable with silicon. Delta doping is a low temperature process and is compatible with fully-fabricated detector arrays. Same base device for Orion two channels. High radiation tolerance and no thinning requirements of high purity p-channel. CCDs are additional advantages.

  13. Silicon clathrates and carbon analogs: high pressure synthesis, structure, and superconductivity.

    PubMed

    Yamanaka, Shoji

    2010-02-28

    Compounds with cage-like structures of elemental silicon and carbon are comparatively reviewed. Barium containing silicon clathrate compounds isomorphous with type I gas hydrates were prepared using high pressure and high temperature (HPHT) conditions, and found to become superconductors. The application of HPHT conditions to Zintl binary silicides have produced a number of silicon-rich cage-like structures including new clathrate structures; most of them are superconductors. Carbon analogs of silicon clathrates can be prepared by 3D polymerization of C(60) under HPHT conditions, which are new allotropes of carbon with expanded framework structures. The crystal chemistry and characteristic properties of some related compounds are also reviewed.

  14. Propagation losses in undoped and n-doped polycrystalline silicon wire waveguides.

    PubMed

    Zhu, Shiyang; Fang, Q; Yu, M B; Lo, G Q; Kwong, D L

    2009-11-09

    Polycrystalline silicon (polySi) wire waveguides with width ranging from 200 to 500 nm are fabricated by solid-phase crystallization (SPC) of deposited amorphous silicon (a-Si) on SiO(2) at a maximum temperature of 1000 degrees C. The propagation loss at 1550 nm decreases from 13.0 to 9.8 dB/cm with the waveguide width shrinking from 500 to 300 nm while the 200-nm-wide waveguides exhibit quite large loss (>70 dB/cm) mainly due to the relatively rough sidewall of waveguides induced by the polySi dry etch. By modifying the process sequence, i.e., first patterning the a-Si layer into waveguides by dry etch and then SPC, the sidewall roughness is significantly improved but the polySi crystallinity is degraded, leading to 13.9 dB/cm loss in the 200-nm-wide waveguides while larger losses in the wider waveguides. Phosphorus implantation causes an additional loss in the polySi waveguides. The doping-induced optical loss increases relatively slowly with the phosphorus concentration increasing up to 1 x 10(18) cm(-3), whereas the 5 x 10(18) cm(-3) doped waveguides exhibit large loss due to the dominant free carrier absorption. For all undoped polySi waveguides, further 1-2 dB/cm loss reduction is obtained by a standard forming gas (10%H(2) + 90%N(2)) annealing owing to the hydrogen passivation of Si dangling bonds present in polySi waveguides, achieving the lowest loss of 7.9 dB/cm in the 300-nm-wide polySi waveguides. However, for the phosphorus doped polySi waveguides, the propagation loss is slightly increased by the forming gas annealing.

  15. A novel ultra steep dynamically reconfigurable electrostatically doped silicon nanowire Schottky Barrier FET

    NASA Astrophysics Data System (ADS)

    Singh, Sangeeta; Sinha, Ruchir; Kondekar, P. N.

    2016-05-01

    In this paper, an ultra steep, symmetric and dynamically configurable, electrostatically doped silicon nanowire Schottky FET (E-SiNW-SB-FET) based on dopant-free technology is investigated. It achieves the ultra steep sub-threshold slope (SS) due to the cumulative effect of weak impact-ionization induced positive feedback and electrostatic modulation of Schottky barrier heights at both source and drain terminals. It consists of axial nanowire heterostructure (silicide-intrinsic silicon-silicide) with three independent all-around gates, two gates are polarity control gates for dynamically reconfiguring the device polarity by modulating the effective Schottky barrier heights and a control gate switches the device ON and OFF. The most interesting features of the proposed structure are simplified fabrication process as the state-of-the-art for ion implantation and high thermal budget no more required for annealing. It is highly immune to process variations, doping control issues and random dopant fluctuations (RDF) and there are no mobility degradation issues related to high doping. A calibrated 3-D TCAD simulation results exhibit the SS of 2 mV/dec for n-type E-SiNW-SB-FET and 9 mV/dec for p-type E-SiNW-SB-FET for about five decades of current. Further, it resolves all the reliability related issues of IMOS as hot electron effects are no more limiting our device performance. It offers significant drive current of the order of 10-5-10-4 A and magnificently high ION/IOFF ratio of ∼108 along with the inherent advantages of symmetric device structure for its circuit realization.

  16. Doped carbon-sulfur species nanocomposite cathode for Li--S batteries

    DOEpatents

    Wang, Donghai; Xu, Tianren; Song, Jiangxuan

    2015-12-29

    We report a heteroatom-doped carbon framework that acts both as conductive network and polysulfide immobilizer for lithium-sulfur cathodes. The doped carbon forms chemical bonding with elemental sulfur and/or sulfur compound. This can significantly inhibit the diffusion of lithium polysulfides in the electrolyte, leading to high capacity retention and high coulombic efficiency.

  17. 3D silicon doped hydroxyapatite scaffolds decorated with Elastin-like Recombinamers for bone regenerative medicine.

    PubMed

    Vila, Mercedes; García, Ana; Girotti, Alessandra; Alonso, Matilde; Rodríguez-Cabello, Jose Carlos; González-Vázquez, Arlyng; Planell, Josep A; Engel, Elisabeth; Buján, Julia; García-Honduvilla, Natalio; Vallet-Regí, María

    2016-11-01

    The current study reports on the manufacturing by rapid prototyping technique of three-dimensional (3D) scaffolds based on silicon substituted hydroxyapatite with Elastin-like Recombinamers (ELRs) functionalized surfaces. Silicon doped hydroxyapatite (Si-HA), with Ca10(PO4)5.7(SiO4)0.3(OH)1.7h0.3 nominal formula, was surface functionalized with two different types of polymers designed by genetic engineering: ELR-RGD that contain cell attachment specific sequences and ELR-SNA15/RGD with both hydroxyapatite and cells domains that interact with the inorganic phase and with the cells, respectively. These hybrid materials were subjected to in vitro assays in order to clarify if the ELRs coating improved the well-known biocompatible and bone regeneration properties of calcium phosphates materials. The in vitro tests showed that there was a total and homogeneous colonization of the 3D scaffolds by Bone marrow Mesenchymal Stromal Cells (BMSCs). In addition, the BMSCs were viable and able to proliferate and differentiate into osteoblasts. Bone tissue engineering is an area of increasing interest because its main applications are directly related to the rising life expectancy of the population, which promotes higher rates of several bone pathologies, so innovative strategies are needed for bone tissue regeneration therapies. Here we use the rapid prototyping technology to allow moulding ceramic 3D scaffolds and we use different bio-polymers for the functionalization of their surfaces in order to enhance the biological response. Combining the ceramic material (silicon doped hydroxyapatite, Si-HA) and the Elastin like Recombinamers (ELRs) polymers with the presence of the integrin-mediate adhesion domain alone or in combination with SNA15 peptide that possess high affinity for hydroxyapatite, provided an improved Bone marrow Mesenchymal Stromal Cells (BMSCs) differentiation into osteoblastic linkage. Copyright © 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights

  18. The 11 micron Silicon Carbide Feature in Carbon Star Shells

    NASA Technical Reports Server (NTRS)

    Speck, A. K.; Barlow, M. J.; Skinner, C. J.

    1996-01-01

    Silicon carbide (SiC) is known to form in circumstellar shells around carbon stars. SiC can come in two basic types - hexagonal alpha-SiC or cubic beta-SiC. Laboratory studies have shown that both types of SiC exhibit an emission feature in the 11-11.5 micron region, the size and shape of the feature varying with type, size and shape of the SiC grains. Such a feature can be seen in the spectra of carbon stars. Silicon carbide grains have also been found in meteorites. The aim of the current work is to identity the type(s) of SiC found in circumstellar shells and how they might relate to meteoritic SiC samples. We have used the CGS3 spectrometer at the 3.8 m UKIRT to obtain 7.5-13.5 micron spectra of 31 definite or proposed carbon stars. After flux-calibration, each spectrum was fitted using a chi(exp 2)-minimisation routine equipped with the published laboratory optical constants of six different samples of small SiC particles, together with the ability to fit the underlying continuum using a range of grain emissivity laws. It was found that the majority of observed SiC emission features could only be fitted by alpha-SiC grains. The lack of beta-SiC is surprising, as this is the form most commonly found in meteorites. Included in the sample were four sources, all of which have been proposed to be carbon stars, that appear to show the SiC feature in absorption.

  19. The 11 micron Silicon Carbide Feature in Carbon Star Shells

    NASA Technical Reports Server (NTRS)

    Speck, A. K.; Barlow, M. J.; Skinner, C. J.

    1996-01-01

    Silicon carbide (SiC) is known to form in circumstellar shells around carbon stars. SiC can come in two basic types - hexagonal alpha-SiC or cubic beta-SiC. Laboratory studies have shown that both types of SiC exhibit an emission feature in the 11-11.5 micron region, the size and shape of the feature varying with type, size and shape of the SiC grains. Such a feature can be seen in the spectra of carbon stars. Silicon carbide grains have also been found in meteorites. The aim of the current work is to identity the type(s) of SiC found in circumstellar shells and how they might relate to meteoritic SiC samples. We have used the CGS3 spectrometer at the 3.8 m UKIRT to obtain 7.5-13.5 micron spectra of 31 definite or proposed carbon stars. After flux-calibration, each spectrum was fitted using a chi(exp 2)-minimisation routine equipped with the published laboratory optical constants of six different samples of small SiC particles, together with the ability to fit the underlying continuum using a range of grain emissivity laws. It was found that the majority of observed SiC emission features could only be fitted by alpha-SiC grains. The lack of beta-SiC is surprising, as this is the form most commonly found in meteorites. Included in the sample were four sources, all of which have been proposed to be carbon stars, that appear to show the SiC feature in absorption.

  20. Diffusion doped p-i-n/p-n diodes for scalable silicon photonics devices

    NASA Astrophysics Data System (ADS)

    Nandi, Riddhi; Kurudi, Sreevatsa; Das, Bijoy Krishna

    2017-05-01

    Diffusion doped p-i-n/p-n diodes in SOI substrate is proposed for the fabrication of active silicon photonics devices with scalable waveguide cross-sections. The p-type and n-type diffusion doping parameters are optimized for the fabrication of tunable single-mode waveguide phase-shifters with microns to submicron cross-sectional dimensions. The simulations results show that the shape of depletion layer can be effectively engineered by suitably positioning the rib waveguide with respect to the gap between doping windows. We could thus introduce an additional control parameter to optimize over-all figure of merits of the phase-shifter for various applications. For an optimized set of diffusion parameters, the VπLπ of single-mode waveguides designed with 1μm, 0.5μm, and 0.25μm device layers (under reverse bias operating in TE-polarization at λ 1550 nm) are found as 2.7 V-cm, 2.1 V-cm, and 1.6 V-cm, respectively. The typical p-n junction capacitance of an optimized 0.25μm single-mode waveguide is estimated to be < 0.5 fF/μm, which is comparable to that of ion-implanted p-n waveguide junctions.

  1. Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively

    NASA Astrophysics Data System (ADS)

    Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

    2016-04-01

    Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50-15000 μmoL L-1 (cubic SiC NWs) and 5-8000 μmoL L-1 (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L-1 respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility.

  2. Significant thermal conductivity reduction of silicon nanowire forests through discrete surface doping of germanium

    SciTech Connect

    Pan, Ying; Hong, Guo; Raja, Shyamprasad N.; Zimmermann, Severin; Poulikakos, Dimos; Tiwari, Manish K.

    2015-03-02

    Silicon nanowires (SiNWs) are promising materials for the realization of highly-efficient and cost effective thermoelectric devices. Reduction of the thermal conductivity of such materials is a necessary and viable pathway to achieve sufficiently high thermoelectric efficiencies, which are inversely proportional to the thermal conductivity. In this article, vertically aligned forests of SiNW and germanium (Ge)-doped SiNW with diameters around 100 nm have been fabricated, and their thermal conductivity has been measured. The results show that discrete surface doping of Ge on SiNW arrays can lead to 23% reduction in thermal conductivity at room temperature compared to uncoated SiNWs. Such reduction can be further enhanced to 44% following a thermal annealing step. By analyzing the binding energy changes of Ge-3d and Si-2p using X-ray photoelectron spectroscopy, we demonstrate that surface doped Ge interacts strongly with Si, enhancing phonon scattering at the Si-Ge interface as has also been shown in non-equilibrium molecular dynamics studies of single nanowires. Overall, our results suggest a viable pathway to improve the energy conversion efficiency of nanowire-forest thermoelectric nanomaterials.

  3. Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively.

    PubMed

    Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

    2016-04-25

    Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50-15000 μmoL L(-1) (cubic SiC NWs) and 5-8000 μmoL L(-1) (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L(-1) respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility.

  4. Bare and boron-doped cubic silicon carbide nanowires for electrochemical detection of nitrite sensitively

    PubMed Central

    Yang, Tao; Zhang, Liqin; Hou, Xinmei; Chen, Junhong; Chou, Kuo-Chih

    2016-01-01

    Fabrication of eletrochemical sensors based on wide bandgap compound semiconductors has attracted increasing interest in recent years. Here we report for the first time electrochemical nitrite sensors based on cubic silicon carbide (SiC) nanowires (NWs) with smooth surface and boron-doped cubic SiC NWs with fin-like structure. Multiple techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS) were used to characterize SiC and boron-doped SiC NWs. As for the electrochemical behavior of both SiC NWs electrode, the cyclic voltammetric results show that both SiC electrodes exhibit wide potential window and excellent electrocatalytic activity toward nitrite oxidation. Differential pulse voltammetry (DPV) determination reveals that there exists a good linear relationship between the oxidation peak current and the concentration in the range of 50–15000 μmoL L−1 (cubic SiC NWs) and 5–8000 μmoL L−1 (B-doped cubic SiC NWs) with the detection limitation of 5 and 0.5 μmoL L−1 respectively. Compared with previously reported results, both as-prepared nitrite sensors exhibit wider linear response range with comparable high sensitivity, high stability and reproducibility. PMID:27109361

  5. Chromium-doped diamond-like carbon films deposited by dual-pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Písařík, P.; Jelínek, M.; Kocourek, T.; Zezulová, M.; Remsa, J.; Jurek, K.

    2014-10-01

    Diamond-like carbon (DLC) and Cr-doped diamond-like carbon layers were studied. DLC and Cr-DLC were deposited on silicon and titanium substrates (Ti-6Al-4V) by dual-pulsed laser ablation using two KrF excimer lasers and two targets (graphite and chromium). The composition was analyzed using wavelength-dependent X-ray spectroscopy. The Cr content increased from 2.2 to 17.9 at%. The topology and surface properties as roughness of layers were studied using scanning electron microscopy and atomic force microscopy. With the chromium concentration increased the roughness and the number of droplets. Carbon and chromium bonds were determined by Raman spectroscopy. With an increase in chromium content the I D/ I G ratio increased. Mechanical properties of DLC films with various chromium content were evaluated. Hardness (reduced Young's modulus) was determined by nanoindentation and reached of 51 GPa (309 GPa). Films adhesion was studied using scratch test and with concentration of chromium increased up to 20 N.

  6. Kohn anomalies and nonadiabaticity in doped carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Caudal, Nicolas; Saitta, A. Marco; Lazzeri, Michele; Mauri, Francesco

    2007-03-01

    The high-frequency Raman-active phonon modes of metallic single-walled carbon nanotubes (SWCNT) are thought to be characterized by Kohn anomalies (KAs) resulting from the combination of SWCNT intrinsic one-dimensional nature and a significant electron-phonon coupling (EPC). KAs are expected to be modified by the doping-induced tuning of the Fermi energy level γF , obtained through the intercalation of SWCNTs with alkali atoms or by the application of a gate potential. We present a density-functional theory (DFT) study of the phonon properties of a (9,9) metallic SWCNT as a function of electronic doping. For such study, we use, as in standard DFT calculations of vibrational properties, the Born-Oppenheimer (BO) approximation. We also develop an analytical model capable of reproducing and interpreting our DFT results. Both DFT calculations and this model predict, for increasing doping levels, a series of EPC-induced KAs in the vibrational mode parallel to the tube axis at the Γ point of the Brillouin zone, usually indicated in Raman spectroscopy as the G- peak. Such KAs would arise each time a new conduction band is populated. However, we show that they are an artifact of the BO approximation. The inclusion of nonadiabatic effects dramatically affects the results, predicting KAs at Γ only when γF is close to a band crossing EX . For each band crossing, a double KA occurs for γF=EX±ℏω/2 , where ℏω is the phonon energy. In particular, for a 1.2nm metallic nanotube, we predict a KA to occur in the so-called G- peak at a doping level of about Nel/C=±0.0015 atom (γF≈±0.1eV) and, possibly, close to the saturation doping level (Nel/ Ctilde 0.125) , where an interlayer band crosses the π* nanotube bands. Furthermore, we predict that the Raman linewidth of the G- peak significantly decreases for ∣γF∣⩾ℏω/2 . Thus, our results provide a tool to determine experimentally the doping level from the value of the KA-induced frequency shift and from the

  7. DEVELOPMENT OF DOPED NANOPOROUS CARBONS FOR HYDROGEN STORAGE

    SciTech Connect

    Lueking, Angela D.; Li, Qixiu; Badding, John V.; Fonseca, Dania; Gutierrez, Humerto; Sakti, Apurba; Adu, Kofi; Schimmel, Michael

    2010-03-31

    Hydrogen storage materials based on the hydrogen spillover mechanism onto metal-doped nanoporous carbons are studied, in an effort to develop materials that store appreciable hydrogen at ambient temperatures and moderate pressures. We demonstrate that oxidation of the carbon surface can significantly increase the hydrogen uptake of these materials, primarily at low pressure. Trace water present in the system plays a role in the development of active sites, and may further be used as a strategy to increase uptake. Increased surface density of oxygen groups led to a significant enhancement of hydrogen spillover at pressures less than 100 milibar. At 300K, the hydrogen uptake was up to 1.1 wt. % at 100 mbar and increased to 1.4 wt. % at 20 bar. However, only 0.4 wt% of this was desorbable via a pressure reduction at room temperature, and the high lowpressure hydrogen uptake was found only when trace water was present during pretreatment. Although far from DOE hydrogen storage targets, storage at ambient temperature has significant practical advantages oner cryogenic physical adsorbents. The role of trace water in surface modification has significant implications for reproducibility in the field. High-pressure in situ characterization of ideal carbon surfaces in hydrogen suggests re-hybridization is not likely under conditions of practical interest. Advanced characterization is used to probe carbon-hydrogen-metal interactions in a number of systems and new carbon materials have been developed.

  8. Electron field emission from composite electrodes of carbon nanotubes-boron-doped diamond and carbon felts

    NASA Astrophysics Data System (ADS)

    Rosolen, J. Mauricio; Tronto, Simone; Marchesin, Marcel S.; Almeida, Erica C.; Ferreira, Neidenei G.; Patrick Poá, C. H.; Silva, S. Ravi P.

    2006-02-01

    The electron field emission of carbon nanotube (CNT)/boron-doped diamond (BDD)/carbon felt electrodes (CNT/BDD/felt) have been investigated. The composite electrode was initially prepared with the growth of BDD on carbon felt and the subsequent growth of CNT by chemical decomposition of methanol. The composite electrodes were characterised using scanning electron microscopy and transmission electron microscopy. For the CNT/BDD/felt samples, the electron field emission was observed at macroscopic fields as low as 1.1Vμm-1. The emission current versus time plot shows significant potential for future field emission applications.

  9. Reduction in Recombination Current Density in Boron Doped Silicon Using Atomic Hydrogen

    NASA Astrophysics Data System (ADS)

    Young, Matthew Garett

    The solar industry has grown immensely in recent years and has reached a point where solar energy has now become inexpensive enough that it is starting to emerge as a mainstream electrical generation source. However, recent economic analysis has suggested that for solar to become a truly wide spread source of electricity, the costs still need to plummet by a factor of 8x. This demands new and innovative concepts to help lower such cost. In pursuit of this goal, this dissertation examines the use of atomic hydrogen to lessen the recombination current density in the boron doped region of n-type silicon solar cells. This required the development of a boron diffusion process that maintained the bulk lifetime of n-type silicon such that the recombination current density could be extracted by photoconductance spectroscopy. It is demonstrated that by hydrogenating boron diffusions, the majority carrier concentration can be controlled. By using symmetrically diffused test structures with quinhydrone-methanol surface passivation the recombination current density of a hydrogenated boron profile is shown to be less than that of a standard boron profile, by as much as 30%. This is then applied to a modified industrial silicon solar cell process to demonstrate an efficiency enhancement of 0.4%.

  10. Directly Patterned Mesoporous Carbon and Metal-Doped Carbon Films Prepared using Block Copolymer Templates in Supercritical CO2

    NASA Astrophysics Data System (ADS)

    Bhatnagar, Gaurav; Watkins, James

    2006-03-01

    Porous carbon and metal-doped porous carbon films have wide applications in separations, sensors, catalysis and magnetic storage applications. Conventionally prepared carbon films have micropores in the size range of 2 nm. Recent techniques for the synthesize of mesoporous carbon with 10-50 nm pores using sacrificial silica templates have limitations with respect to pore connectivity and the preparation of patterned and metal-doped carbon films. Here we report supercritical fluid-assisted infusion and phase selective reaction within pre-organized block copolymer and block copolymer/homopolymer templates to synthesize mesoporous carbon and metal doped carbon films. Well-defined mesoporous carbon films patterned at the device level with good mechanical properties and metal doped carbon films by pre-infusion of block copolymer templates with metal precursors in supercritical carbon dioxide were synthesized. Platinum doped carbon films for applications in fuel cells having good electrochemical response were produced. The preparation of cobalt containing carbon films with potential use in magnetic storage applications demonstrates the general applicability of supercritical infusion technique to produce metal cluster containing films.

  11. Analysis and calculation of electronic properties and light absorption of defective sulfur-doped silicon and theoretical photoelectric conversion efficiency.

    PubMed

    Jiang, He; Chen, Changshui

    2015-04-23

    Most material properties can be traced to electronic structures. Black silicon produced from SF6 or sulfur powder via irradiation with femtosecond laser pulses displays decreased infrared absorption after annealing, with almost no corresponding change in visible light absorption. The high-intensity laser pulses destroy the original crystal structure, and the doping element changes the material performance. In this work, the structural and electronic properties of several sulfur-doped silicon systems are investigated using first principle calculations. Depending on the sulfur concentration (level of doping) and the behavior of the sulfur atoms in the silicon lattice, different states or an absence of states are exhibited, compared with the undoped system. Moreover, the visible-infrared light absorption intensities are structure specific. The results of our theoretical calculations show that the conversion efficiency of sulfur-doped silicon solar cells depends on the sulfur concentrations. Additionally, two types of defect configurations exhibit light absorption characteristics that differ from the other configurations. These two structures produce a rapid increase in the theoretical photoelectric conversion efficiency in the range of the specific chemical potential studied. By controlling the positions of the atomic sulfur and the sulfur concentration in the preparation process, an efficient photovoltaic (PV) material may be obtainable.

  12. Properties of doped silicon single crystals grown by the Czochralski method and by the method of rigidly attached communicating vessels

    SciTech Connect

    Dashevskii, M.Ya.; Petrov, V.V.; Mikhnenko, V.M.

    1987-08-01

    Phosphorus-doped dislocation-free silicon single crystals, grown by the method of rigidly attached communicating vessels and the Czochralski method have been studied. The phosphorus, optically active oxygen, and microdefects have been found to be more undistributed in MRACV-grown single crystals than in Czochralski-grown single crystals.

  13. Effect of argon flow on promoting boron doping for in-situ grown silicon nitride thin films containing silicon quantum dots

    NASA Astrophysics Data System (ADS)

    Liu, Jia; Liu, Bin; Zhang, Xisheng; Guo, Xiaojia; (Frank Liu, Shengzhong

    2017-07-01

    Boron-doped silicon nitride thin films (SiNx) containing silicon quantum dots (Si QD) were prepared in situ by plasma enhanced chemical vapor deposition. With the aim of optimizing the performance of thin films, the mixed gas including argon and hydrogen was applied as dilution. The effects of Ar flow on the structural, electrical and optical properties of B-doped SiNx thin films were systemically studied through various characterizations. By tuning the Ar flow, the properties, such as QD size, crystallinity and optical band gap, can be effectively controlled. The B-doping efficiency in thin films was proved to be promoted by introducing moderate Ar flow. The maximum values of dark conductivity (1.52 S cm-1) and carrier concentration (2.41 × 1019 cm-3) were obtained for the B-doped SiNx thin films at the Ar flow of 200 sccm. Furthermore, the mechanism on the promotion in B-doping was illustrated in detail in this paper.

  14. A theoretical study of silicon-doped boron nitride nanotubes serving as a potential chemical sensor for hydrogen cyanide.

    PubMed

    Wang, Ruoxi; Zhang, Dongju; Liu, Yongjun; Liu, Chengbu

    2009-12-16

    In order to search for a novel sensor to detect and control exposure to hydrogen cyanide (HCN) pollutant molecule in environments, the reactivities of pristine and silicon-doped (Si-doped) (8, 0) single-walled boron nitride nanotubes (BNNTs) towards the HCN molecule are investigated by performing density functional theory (DFT) calculations. The HCN molecule presents strong chemisorption on both the silicon-substituted boron defect site and the silicon-substituted nitrogen defect site of the BNNT, which is in sharp contrast to its weak physisorption on pristine BNNT. A remarkable charge transfer occurs between the HCN molecule and the Si-doped BNNT as proved by the electronic charge densities. The calculated data for the electronic density of states (DOSs) further indicate that the doping of the Si atom improves the electronic transport property of the BNNT, and increases its adsorption sensitivity towards the HCN molecule. Based on calculated results, the Si-doped BNNT is expected to be a potential resource for detecting the presence of toxic HCN.

  15. Viscous slip along grain boundaries in chlorine-doped silicon nitride

    SciTech Connect

    Pezzotti, G.; Ota, K.; Kleebe, H.J.

    1997-09-01

    The effect of chlorine doping on the anelastic-relaxation and torsional-creep behavior of a silicon nitride (Si{sub 3}N{sub 4}) polycrystalline body was studied. Two model polycrystals--one undoped and the other doped with a small fracture of chlorine--were investigated. Their microstructures consisted of equiaxed and well-faceted Si{sub 3}N{sub 4} grains whose boundaries were separated by a continuous, nanometer-sized film of silica (SiO{sub 2}) glass. The actual presence of chlorine in the doped polycrystal was ascertained by ion chromatography and is thought to be enriched at the grain boundaries. The effect o chlorine on the intergranular film structure was characterized by high-resolution electron microscopy. The micromechanical response of the SiO{sub 2} grain boundary under shear stress was monitored up to very high temperatures (i.e., {approximately}2,000 C) by internal-friction and torsional-creep experiments. The presence of the chlorine dopant, which is a network modifier of SiO{sub 2} glass that also causes a widening of the grain-boundary film, significantly lowered the bulk viscosity of the residual glass. As a consequence of the change in grain-boundary chemistry, the internal-friction curve of the chlorine-doped material shifted toward lower temperatures and the torsional-creep rate markedly increased, as compared to the undoped material. According to a viscoelastic model of the Si{sub 3}N{sub 4} polycrystal, the internal-friction data resulted as a superposition of two individual components: (i) a relaxation peak that is related to the anelastic slip mechanism along grain boundaries and (ii) a background component that results from an irreversible diffusional-creep mechanism.

  16. Controlled release of alendronate from nitrogen-doped mesoporous carbon

    DOE PAGES

    Saha, Dipendu; Spurri, Amanda; Chen, Jihua; ...

    2016-04-13

    With this study, we have synthesized a nitrogen doped mesoporous carbon with the BET surface area of 1066 m2/g, total pore volume 0.6 cm3/g and nitrogen content of 0.5%. Total alendronate adsorption in this carbon was ~5%. The release experiments were designed in four different media with sequential pH values of 1.2, 4.5, 6.8 and 7.4 for 3, 1, 3 and 5 h, respectively and at 37 °C to imitate the physiological conditions of stomach, duodenum, small intestine and colon, respectively. Release of the drug demonstrated a controlled fashion; only 20% of the drug was released in the media withmore » pH = 1.2, whereas 64% of the drug was released in pH = 7.4. This is in contrary to pure alendronate that was completely dissolved within 30 min in the first release media (pH = 1.2) only. The relatively larger uptake of alendronate in this carbon and its sustained fashion of release can be attributed to the hydrogen bonding between the drug and the nitrogen functionalities on carbon surface. Based on this result, it can be inferred that this formulation may lower the side effects of oral delivery of alendronate.« less

  17. Controlled release of alendronate from nitrogen-doped mesoporous carbon

    SciTech Connect

    Saha, Dipendu; Spurri, Amanda; Chen, Jihua; Hensley, Dale K.

    2016-04-13

    With this study, we have synthesized a nitrogen doped mesoporous carbon with the BET surface area of 1066 m2/g, total pore volume 0.6 cm3/g and nitrogen content of 0.5%. Total alendronate adsorption in this carbon was ~5%. The release experiments were designed in four different media with sequential pH values of 1.2, 4.5, 6.8 and 7.4 for 3, 1, 3 and 5 h, respectively and at 37 °C to imitate the physiological conditions of stomach, duodenum, small intestine and colon, respectively. Release of the drug demonstrated a controlled fashion; only 20% of the drug was released in the media with pH = 1.2, whereas 64% of the drug was released in pH = 7.4. This is in contrary to pure alendronate that was completely dissolved within 30 min in the first release media (pH = 1.2) only. The relatively larger uptake of alendronate in this carbon and its sustained fashion of release can be attributed to the hydrogen bonding between the drug and the nitrogen functionalities on carbon surface. Based on this result, it can be inferred that this formulation may lower the side effects of oral delivery of alendronate.

  18. The composite capacitive behaviors of the N and S dual doped ordered mesoporous carbon with ultrahigh doping level

    NASA Astrophysics Data System (ADS)

    Zhang, Deyi; Lei, Longyan; Shang, Yonghua; Wang, Kunjie; Wang, Yi

    2016-01-01

    Heteroatoms doping provides a promising strategy for improving the energy density of supercapacitors based on the carbon electrodes. In this paper, we present a N and S dual doped ordered mesoporous carbon with ultrahigh doping level using dimethylglyoxime as pristine precursor. The N doping content of the reported materials varies from 6.6 to 15.6 at.% dependent on the carbonization temperature, and the S doping content varies from 0.46 to 1.01 at.%. Due to the ultrahigh heteroatoms doping content, the reported materials exhibit pronounced pseudo-capacitance. Meanwhile, the reported materials exhibit high surface areas (640⿿869 m2 g⿿1), large pore volume (0.71⿿1.08 cm2 g⿿1) and ordered pore structure. The outstanding textual properties endow the reported materials excellent electrical double-layer capacitance (EDLC). By effectively combining the pseudo-capacitance with EDLC, the reported materials exhibit a surprising energy storage/relax capacity with the highest specific capacitance of 565 F g⿿1, which value is 3.3 times higher than that of pristine CMK-3, and can compete against some conventional pseudo-capacitance materials.

  19. Empirical determination of the energy band gap narrowing in p{sup +} silicon heavily doped with boron

    SciTech Connect

    Yan, Di Cuevas, Andres

    2014-11-21

    In the analysis of highly doped silicon, energy band gap narrowing (BGN) and degeneracy effects may be accounted for separately, as a net BGN in conjunction with Fermi-Dirac statistics, or lumped together in an apparent BGN used with Boltzmann statistics. This paper presents an experimental study of silicon highly doped with boron, with the aim of evaluating the applicability of previously reported BGN models. Different boron diffusions covering a broad range of dopant densities were prepared, and their characteristic recombination current parameters J{sub 0} were measured using a contactless photoconductance technique. The BGN was subsequently extracted by matching theoretical simulations of carrier transport and recombination in each of the boron diffused regions and the measured J{sub 0} values. An evaluation of two different minority carrier mobility models indicates that their impact on the extraction of the BGN is relatively small. After considering possible uncertainties, it can be concluded that the BGN is slightly larger in p{sup +} silicon than in n{sup +} silicon, in qualitative agreement with theoretical predictions by Schenk. Nevertheless, in quantitative terms that theoretical model is found to slightly underestimate the BGN in p{sup +} silicon. With the two different parameterizations derived in this paper for the BGN in p{sup +} silicon, both statistical approaches, Boltzmann and Fermi-Dirac, provide a good agreement with the experimental data.

  20. Tunable Band Gaps and Excitons in Doped Semiconducting Carbon Nanotubes Made Possible by Acoustic Plasmons

    NASA Astrophysics Data System (ADS)

    Spataru, Catalin D.; Léonard, François

    2010-04-01

    Doping of semiconductors is essential in modern electronic and photonic devices. While doping is well understood in bulk semiconductors, the advent of carbon nanotubes and nanowires for nanoelectronic and nanophotonic applications raises some key questions about the role and impact of doping at low dimensionality. Here we show that for semiconducting carbon nanotubes, band gaps and exciton binding energies can be dramatically reduced upon experimentally relevant doping, and can be tuned gradually over a broad range of energies in contrast with higher dimensional systems. The latter feature is made possible by a novel mechanism involving strong dynamical screening effects mediated by acoustic plasmons.

  1. Nano-structured composite of Si/(S-doped-carbon nanowire network) as anode material for lithium-ion batteries

    NASA Astrophysics Data System (ADS)

    Shao, Dan; Tang, Daoping; Yang, Jianwen; Li, Yanwei; Zhang, Lingzhi

    2015-11-01

    Novel nanostructured silicon composites, Si/Poly(3,4-ethylenedioxythiophene) nanowire network (Si/PNW) and Si/(S-doped-carbon nanowire network) (Si/S-CNW), are prepared by a soft-template polymerization of 3,4-ethylenedioxythiophene (EDOT) using sodium dodecyl sulfate (SDS) as surfactant with the presence of Si nanoparticles and a subsequent carbonization of Si/PNW, respectively. The presence of Si nanoparticles in the soft-template polymerization of EDOT plays a critical role in the formation of PEDOT nanowire network instead of 1D nanowire. After the carbonization of PEDOT, the S-doped-carbon nanowire network matrix shows higher electrical conductivity than PNW counterpart, which facilitates to construct robust conductive bridges between Si nanoparticles and provide large electrode/electrolyte interfaces for rapid charge transfer reactions. Thus, Si/S-CNW composite exhibits excellent cycling stability and rate capability as anode material, retaining a specific capacity of 820 mAh g-1 after 400 cycles with a very small capacity fade of 0.09% per cycle.

  2. Reactive melt infiltration of silicon-molybdenum alloys into microporous carbon preforms

    NASA Technical Reports Server (NTRS)

    Singh, M.; Behrendt, D. R.

    1995-01-01

    Investigations on the reactive melt infiltration of silicon-1.7 and 3.2 at.% molybdenum alloys into microporous carbon preforms have been carried out by modeling, differential thermal analysis (DTA), and melt infiltration experiments. These results indicate that the pore volume fraction of the carbon preform is a very important parameter in determining the final composition of the reaction-formed silicon carbide and the secondary phases. Various undesirable melt infiltration results, e.g. choking-off, specimen cracking, silicon veins, and lake formation, and their correlation with inadequate preform properties are presented. The liquid silicon-carbon reaction exotherm temperatures are influenced by the pore and carbon particle size of the preform and the compositions of infiltrants. Room temperature flexural strength and fracture toughness of materials made by the silicon-3.2 at.% molybdenum alloy infiltration of medium pore size preforms are also discussed.

  3. Modeling and simulation of boron-doped nanocrystalline silicon carbide thin film by a field theory.

    PubMed

    Xiong, Liming; Chen, Youping; Lee, James D

    2009-02-01

    This paper presents the application of a multiscale field theory in modeling and simulation of boron-doped nanocrystalline silicon carbide (B-SiC). The multiscale field theory was briefly introduced. Based on the field theory, numerical simulations show that intergranular glassy amorphous films (IGFs) and nano-sized pores exist in triple junctions of the grains for nanocrystalline B-SiC. Residual tensile stress in the SiC grains and compressive stress on the grain boundaries (GBs) were observed. Under tensile loading, it has been found that mechanical response of 5 wt% boron-SiC exhibits five characteristic regimes. Deformation mechanism at atomic scale has been revealed. Tensile strength and Young's modulus of nanocrystalline SiC were accurately reproduced.

  4. Thermoelectric thermal detectors based on ultra-thin heavily doped single-crystal silicon membranes

    NASA Astrophysics Data System (ADS)

    Varpula, Aapo; Timofeev, Andrey V.; Shchepetov, Andrey; Grigoras, Kestutis; Hassel, Juha; Ahopelto, Jouni; Ylilammi, Markku; Prunnila, Mika

    2017-06-01

    We present thermal detectors based on 40 nm-thick strain tuned single crystalline silicon membranes shaped into a heater area supported by narrow n- and p-doped beams, which also operate as a thermocouple. The electro-thermal characterization of the devices reveals a noise equivalent power of 13 pW/Hz1/2 and a thermal time constant of 2.5 ms. The high sensitivity of the devices is due to the high Seebeck coefficient of 0.39 mV/K and reduction of thermal conductivity of the Si beams from the bulk value. The performance enables fast and sensitive detection of low levels of thermal power and infrared radiation at room temperature. The devices operate in the Johnson-Nyquist noise limit of the thermocouple, and the performance improvement towards the operation close to the temperature fluctuation limit is discussed.

  5. Electronic and magnetic properties of yttrium-doped silicon carbide nanotubes: Density functional theory investigations

    SciTech Connect

    Khaira, Jobanpreet S.; Jain, Richa N.; Chakraborty, Brahmananda; Ramaniah, Lavanya M.

    2015-06-24

    The electronic structure of yttrium-doped Silicon Carbide Nanotubes has been theoretically investigated using first principles density functional theory (DFT). Yttrium atom is bonded strongly on the surface of the nanotube with a binding energy of 2.37 eV and prefers to stay on the hollow site at a distance of around 2.25 Å from the tube. The semi-conducting nanotube with chirality (4, 4) becomes half mettalic with a magnetic moment of 1.0 µ{sub B} due to influence of Y atom on the surface. There is strong hybridization between d orbital of Y with p orbital of Si and C causing a charge transfer from d orbital of the Y atom to the tube. The Fermi level is shifted towards higher energy with finite Density of States for only upspin channel making the system half metallic and magnetic which may have application in spintronic devices.

  6. Erbium-doped spiral amplifiers with 20 dB of net gain on silicon.

    PubMed

    Vázquez-Córdova, Sergio A; Dijkstra, Meindert; Bernhardi, Edward H; Ay, Feridun; Wörhoff, Kerstin; Herek, Jennifer L; García-Blanco, Sonia M; Pollnau, Markus

    2014-10-20

    Spiral-waveguide amplifiers in erbium-doped aluminum oxide on a silicon wafer are fabricated and characterized. Spirals of several lengths and four different erbium concentrations are studied experimentally and theoretically. A maximum internal net gain of 20 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1532 nm for two sample configurations with waveguide lengths of 12.9 cm and 24.4 cm and concentrations of 1.92 × 10(20) cm(-3) and 0.95 × 10(20) cm(-3), respectively. The noise figures of these samples are reported. Gain saturation as a result of increasing signal power and the temperature dependence of gain are studied.

  7. Erbium-doped amorphous silicon nitride light emitters for on-chip photonics applications

    NASA Astrophysics Data System (ADS)

    Yerci, Selcuk

    Silicon Photonics is considered as a viable, scalable and cost-effective solution to "the interconnect bottleneck" problem. However, the engineering of complementary metal oxide semiconductor (CMOS) compatible light sources is considered the biggest challenge of silicon photonics. Er-doped silicon-based structures are very promising candidates for 1.54 pm operation. Although Er-doped fiber lasers and amplifiers are available for long-haul communications, the small emission cross section of Er severely limits the applicability to small footprint (˜2.5 cm2) optical chip applications due to the small gain x length product. As a result, engineering strategies to boost emission efficiency and optical gain under both optical and electrical pumping in Er-doped CMOS materials need to be developed. Recently, energy sensitization of Er ions through Si-nanocrystals in Si-rich SiO2 films (Er:SRO) has been demonstrated with excitation cross sections (sigmaexc) of Er ions four-five orders of magnitude larger than sigmaabs. However, this approach suffers from the substantial free carrier losses introduced by Si-nanocrystals and the low fraction of optically active Er ions preventing net optical gain. Hence, novel materials approaches need to be developed. In this thesis, Er-doped amorphous silicon nitride (Er:SiNx) by N2 reactive sputtering is developed as a CMOS compatible platform for light sources operating under both optical and electrical pumping. The origin of visible PL of SiNx is explained by radiative transitions via localized states at the band-tails of SiNx. The efficient energy transfer between the localized band tails states in SiNx and Er ions is discussed and, sigmaexc is quantified. By performing temperature dependent studies, we demonstrated that the energy transfer is phonon-mediated. Er PL intensity and lifetime are optimized in ErSiN x by varying the fabrication parameters and a fundamental trade-off between Er excitation and emission efficiencies is

  8. Spin-on-doping for output power improvement of silicon nanowire array based thermoelectric power generators

    SciTech Connect

    Xu, B. Fobelets, K.

    2014-06-07

    The output power of a silicon nanowire array (NWA)-bulk thermoelectric power generator (TEG) with Cu contacts is improved by spin-on-doping (SOD). The Si NWAs used in this work are fabricated via metal assisted chemical etching (MACE) of 0.01–0.02 Ω cm resistivity n- and p-type bulk, converting ~4% of the bulk thickness into NWs. The MACE process is adapted to ensure crystalline NWs. Current-voltage and Seebeck voltage-temperature measurements show that while SOD mainly influences the contact resistance in bulk, it influences both contact resistance and power factor in NWA-bulk based TEGs. According to our experiments, using Si NWAs in combination with SOD increases the output power by an order of 3 under the same heating power due to an increased power factor, decreased thermal conductivity of the NWA and reduced Si-Cu contact resistance.

  9. Vanadium-doped small silicon clusters: Photoelectron spectroscopy and density-functional calculations

    NASA Astrophysics Data System (ADS)

    Xu, Hong-Guang; Zhang, Zeng-Guang; Feng, Yuan; Yuan, Jinyun; Zhao, Yuchao; Zheng, Weijun

    2010-03-01

    Vanadium-doped small silicon clusters, VSin- and VSin- ( n = 3-6), have been studied by anion photoelectron spectroscopy. The vertical detachment energies (VDEs) and adiabatic detachment energies (ADEs) of these clusters were obtained from their photoelectron spectra. We have also conducted density-functional calculations of VSin- and VSin- clusters and determined their structures by comparison of theoretical calculations with experimental results. Our results show that two V atoms in VSin- clusters tend to form a strong V-V bond. VSi6- has D3d symmetry with the six Si atoms forming a chair like six-membered ring similar to the ring in cyclohexane and the two vanadium atoms are joined with a δ bond.

  10. Spin relaxation through lateral spin transport in heavily doped n -type silicon

    NASA Astrophysics Data System (ADS)

    Ishikawa, M.; Oka, T.; Fujita, Y.; Sugiyama, H.; Saito, Y.; Hamaya, K.

    2017-03-01

    We experimentally study temperature-dependent spin relaxation including lateral spin diffusion in heavily doped n -type silicon (n+-Si ) layers by measuring nonlocal magnetoresistance in small-sized CoFe/MgO/Si lateral spin-valve (LSV) devices. Even at room temperature, we observe large spin signals, 50-fold the magnitude of those in previous works on n+-Si . By measuring spin signals in LSVs with various center-to-center distances between contacts, we reliably evaluate the temperature-dependent spin diffusion length (λSi) and spin lifetime (τSi). We find that the temperature dependence of τSi is affected by that of the diffusion constant in the n+-Si layers, meaning that it is important to understand the temperature dependence of the channel mobility. A possible origin of the temperature dependence of τSi is discussed in terms of the recent theories by Dery and co-workers.

  11. A hybrid density functional study of silicon and phosphorus doped hexagonal boron nitride monolayer

    NASA Astrophysics Data System (ADS)

    Mapasha, R. E.; Igumbor, E.; Chetty, N.

    2016-10-01

    We present a hybrid density functional study of silicon (Si) and phosphorus (P) doped hexagonal boron nitride (h-BN). The local geometry, electronic structure and thermodynamic stability of Si B , Si N , P B and P N are examined using hybrid Heyd-Scuseria- Ernzerhof (HSE) functional. The defect induced buckling and the local bond distances around the defect are sensitive to charge state modulation q = -2, -1, 0, +1 and +2. The +1 charge state is found to be the most energetically stable state and significantly reduces the buckling. Based on the charge state thermodynamic transition levels, we noted that the Si N , Si N and P B defects are too deep to be ionized, and can alter the optical properties of h-BN material.

  12. Nano-Scale Analysis of Precipitates in Nitrogen-Doped Czochralski SIlicon

    SciTech Connect

    Rozgonyi, G. A.; Karoui, A.; Kvit, A.; Duscher, Gerd J M

    2003-01-01

    Nitrogen-doped Czochralski (CZ) silicon wafers were heat treated with Lo-Hi annealing in argon. Nanoscale defects were then examined by high resolution transmission electron microscopy (HRTEM), scanning transmission electron microscopy (STEM) in the Z-contrast mode, and electron energy loss spectroscopy (EELS) analyses using a field emission JEOL 2010 with a resolution below 2 {angstrom}. The structures of precipitates, stacking faults and interstitial aggregates were found to depend on their location relative to the wafer surface. Precipitate composition, strain at the interface and interface roughness were obtained and are discussed in connection with the point defects generated during crystal growth and modified during wafer annealing. An excellent correlation was found between Z-contrast line scans across the precipitates and the N to O concentration ratio determined with EELS. In the precipitate central region that ratio is between 1 and 6%, whereas at precipitate boundaries it reaches 17%.

  13. Zero infrared reflectance anomaly in doped silicon lamellar gratings. I. From antireflection to total absorption

    NASA Astrophysics Data System (ADS)

    Auslender, M.; Hava, S.

    1995-12-01

    Zero-reflectance phenomenon for a binary lamellar grating on n-Si substrate irradiated by normally incident TE polarized plane electromagnetic wave of wavelength 10.6 μm is studied. The treatment is performed in the strong diffraction regime, where the structural dimensions and the wavelength are of the same order of magnitude, using data on the IR dielectric function of bulk doped silicon and a version of rigorous coupled-wave analysis. The evolution of normal reflectance zeros with increasing electron concentration from dielecric to metallic-like n-Si is traced. It is shown that the groove height undergoes sharp increase and the period shrinks when plasma wavelength becomes equal to the radiation wavelength. This marks the transition from the antireflection to the total absorption regime where most of incident power is absorbed in the grating region. The cavity-resonance origin of total absorption and satellite peaks in the spectral response are discussed.

  14. A high-performance broadband terahertz absorber based on sawtooth-shape doped-silicon

    SciTech Connect

    Du, Liang-Hui Li, Jiang; Zhai, Zhao-Hui; Meng, Kun; Liu, Qiao; Zhong, Sen-Cheng; Zhou, Ping-Wei; Zhu, Li-Guo Li, Ze-Ren; Peng, Qi-Xian

    2016-05-15

    Perfect absorbers with broadband absorption of terahertz (THz) radiation are promising for applications in imaging and detection to enhance the contrast and sensitivity, as well as to provide concealment. Different from previous two-dimensional structures, here we put forward a new type of THz absorber based on sawtooth-shape doped-silicon with near-unit absorption across a broad spectral range. Absorbance over 99% is observed numerically from 1.2 to 3 THz by optimizing the geometric parameters of the sawtooth structure. Our absorbers can operate over a wide range of incident angle and are polarization insensitive. The underlying mechanisms due to the combination of an air-cavity mode and mode-matching resonance on the air-sawtooth interface are analyzed in terms of the field patterns and electromagnetic power loss features.

  15. Phosphorus-doped silicon nanorod anodes for high power lithium-ion batteries

    PubMed Central

    Gao, Jianzhi; He, Deyan

    2017-01-01

    Heavy-phosphorus-doped silicon anodes were fabricated on CuO nanorods for application in high power lithium-ion batteries. Since the conductivity of lithiated CuO is significantly better than that of CuO, after the first discharge, the voltage cut-off window was then set to the range covering only the discharge–charge range of Si. Thus, the CuO core was in situ lithiated and acts merely as the electronic conductor in the following cycles. The Si anode presented herein exhibited a capacity of 990 mAh/g at the rate of 9 A/g after 100 cycles. The anode also presented a stable rate performance even at a current density as high as 20 A/g. PMID:28243560

  16. The formation of light emitting cerium silicates in cerium-doped silicon oxides

    SciTech Connect

    Li Jing; Zalloum, Othman; Roschuk, Tyler; Heng Chenglin; Wojcik, Jacek; Mascher, Peter

    2009-01-05

    Cerium-doped silicon oxides with cerium concentrations of up to 0.9 at. % were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. Bright cerium related photoluminescence, easily seen even under room lighting conditions, was observed from the films and found to be sensitive to film composition and annealing temperature. The film containing 0.9 at. % Ce subjected to anneal in N{sub 2} at 1200 deg. C for 3 h showed the most intense cerium-related emission, easily visible under bright room lighting conditions. This is attributed to the formation of cerium silicate [Ce{sub 2}Si{sub 2}O{sub 7} or Ce{sub 4.667} (SiO{sub 4}){sub 3}O], the presence of which was confirmed by high resolution transmission electron microscopy.

  17. Oxidation Behavior of Carbon Fiber Reinforced Silicon Carbide Composites

    NASA Technical Reports Server (NTRS)

    Valentin, Victor M.

    1995-01-01

    Carbon fiber reinforced Silicon Carbide (C-SiC) composites offer high strength at high temperatures and good oxidation resistance. However, these composites present some matrix microcracks which allow the path of oxygen to the fiber. The aim of this research was to study the effectiveness of a new Silicon Carbide (SiC) coating developed by DUPONT-LANXIDE to enhance the oxidation resistance of C-SiC composites. A thermogravimetric analysis was used to determine the oxidation rate of the samples at different temperatures and pressures. The Dupont coat proved to be a good protection for the SiC matrix at temperatures lower than 1240 C at low and high pressures. On the other hand, at temperatures above 1340 C the Dupont coat did not seem to give good protection to the composite fiber and matrix. Even though some results of the tests have been discussed, because of time restraints, only a small portion of the desired tests could be completed. Therefore, no major conclusions or results about the effectiveness of the coat are available at this time.

  18. Opacity spectra of silicon and carbon in ICF plasmas

    NASA Astrophysics Data System (ADS)

    Benredjem, D.; Calisti, A.; Ferri, S.; Gilleron, F.; Mondet, G.; Pain, J.-C.

    2017-03-01

    The knowledge of opacity is very important when one investigates the radiative properties of ICF and astrophysical plasmas. Germanium and silicon are good candidates as dopants in the ablator of some ICF schemes (LMJ in France, NIF at Livermore). In this work we calculate the opacity spectra of silicon and carbon mixtures. Two competitive methods were used. The first one is based on a detailed line calculation in which the atomic database is provided by the MCDF code. A lineshape code based on a fast algorithm was then adapted to the calculation of opacity profiles. All major line broadening mechanisms, including Zeeman splitting and Stark effect, are taken into account. This approach provides accurate opacity spectra but becomes rapidly prohibitive when the number of lines is large. To account for systems involving many ionic stages and thousands of lines, a second approach combines detailed line calculations and statistical calculations. This approach necessitates much smaller calculation times than the first one and is then more appropriate for extensive calculations. The monochromatic opacity and the Rosseland and Planck mean opacities are calculated for relevant densities and temperatures.

  19. Laser induced crystallization of hydrogenated amorphous silicon-carbon alloys

    NASA Astrophysics Data System (ADS)

    Summonte, C.; Rizzoli, R.; Servidori, M.; Milita, S.; Nicoletti, S.; Bianconi, M.; Desalvo, A.; Iencinella, D.

    2004-10-01

    Laser induced crystallization of hydrogenated amorphous silicon carbon alloy (a-Si1-xCx:H) films has been investigated by means of synchrotron x-ray diffraction. The a-Si1-xCx:H films were deposited on (100) silicon wafers by very high frequency plasma enhanced chemical vapor deposition at 100MHz in hydrogen diluted silane-methane gas mixtures. The substrate was kept at 250°C or 350°C and the stoichiometry was changed from x =0.20 to 0.63. The structural characterization of the as-grown films has been carried out by Rutherford backscattering (hydrogen concentration) and infrared spectroscopy (film ordering). The films were irradiated by a KrF excimer laser (248nm ) with varying energy density and number of pulses. After irradiation, the formation of SiC crystallites has been revealed by synchrotron x-ray diffraction. Besides SiC nanocrystals, the formation of crystalline Si and graphite is observed for under- (x <0.50) and over-stoichiometric (x>0.50) samples, respectively. The essential role played by hydrogen concentration and hydrogen bonding configuration in determining the melting threshold and the consequent SiC grain formation is highlighted.

  20. Improvement in passivation quality and open-circuit voltage in silicon heterojunction solar cells by the catalytic doping of phosphorus atoms

    NASA Astrophysics Data System (ADS)

    Tsuzaki, Shogo; Ohdaira, Keisuke; Oikawa, Takafumi; Koyama, Koichi; Matsumura, Hideki

    2015-07-01

    We apply phosphorus (P) doping to amorphous silicon (a-Si)/crystalline silicon (c-Si) heterojunction solar cells realized by exposing c-Si to P-related radicals generated by the catalytic cracking of PH3 molecules (Cat-doping). An ultrathin n+-layer formed by P Cat-doping acts to improve the effective minority carrier lifetime (τeff) and implied open-circuit voltage (implied Voc) owing to its field effect by which minority holes are sent back from an a-Si/c-Si interface. An a-Si/c-Si heterojunction solar cell with a P Cat-doped layer shows better solar cell performance, particularly in Voc, than the cell without P Cat-doping. This result demonstrates the feasibility of applying Cat-doping to a-Si/c-Si heterojunction solar cells, owing to the advantage of the low-temperature (<200 °C) process of Cat-doping.

  1. Methods of Attaching or Grafting Carbon Nanotubes to Silicon Surfaces and Composite Structures Derived Therefrom

    NASA Technical Reports Server (NTRS)

    Tour, James M. (Inventor); Chen, Bo (Inventor); Flatt, Austen K. (Inventor); Stewart, Michael P. (Inventor); Dyke, Christopher A. (Inventor); Maya, Francisco (Inventor)

    2012-01-01

    The present invention is directed toward methods of attaching or grafting carbon nanotubes (CNTs) to silicon surfaces. In some embodiments, such attaching or grafting occurs via functional groups on either or both of the CNTs and silicon surface. In some embodiments, the methods of the present invention include: (1) reacting a silicon surface with a functionalizing agent (such as oligo(phenylene ethynylene)) to form a functionalized silicon surface; (2) dispersing a quantity of CNTs in a solvent to form dispersed CNTs; and (3) reacting the functionalized silicon surface with the dispersed CNTs. The present invention is also directed to the novel compositions produced by such methods.

  2. Carbon nanostructures on silicon substrates suitable for nanolithography

    SciTech Connect

    Abdi, Y.; Mohajerzadeh, S.; Hoseinzadegan, H.; Koohsorkhi, J.

    2006-01-30

    We report the application of vertically grown carbon nanotubes (CNTs) for submicron and nanolithography. The growth of CNTs is performed on silicon substrates using a nickel-seeded plasma-enhanced chemical vapor deposition method at a temperature of 650 deg. C and with a mixture of C{sub 2}H{sub 2} and H{sub 2}. The grown CNTs are encapsulated by a titanium-dioxide film and then mechanically polished to expose the buried nanotubes, and a plasma ashing step finalizes the process. The emission of electrons from the encapsulated nanotubes is used to write patterns on a resist-coated substrate placed opposite to the main CNT holding one. Scanning electron microscope has been used to investigate the nanotubes and the formation of nano-metric lines. Also a novel approach is presented to create isolated nanotubes from a previously patterned cluster growth.

  3. Silicone dielectric elastomers filled with carbon nanotubes and actuator

    NASA Astrophysics Data System (ADS)

    Zhang, Zhen; Liu, Liwu; Deng, Gang; Sun, Shouhua; Liu, Yanju; Leng, Jinsong

    2009-03-01

    Dielectric elastomers (DEs) are one particular type of electroactive polymers. The excellent features of merit possessed by dielectric elastomers make them the most performing materials which can be applied in many domains: biomimetics, aerospace, mechanics, medicals, etc. In order to maximize actuator performance, the dielectric elastomer actuators should have a high dielectric constant and high dielectric breakdown strength. In this paper, multi-walled carbon nanotube (MWNT) is used to develop a particulate composite based on silicone elastomer matrix, with dielectric permittivity improved. And the composite is designed to a new configuration of dielectric elastomer actuator to show electrically activated linear contractions. Prototype samples of this folded actuator, along with the fabrication and analysis is discussed here.

  4. Mechanical Properties of Silicone Rubber Acoustic Lens Material Doped with Fine Zinc Oxide Powders for Ultrasonic Medical Probe

    NASA Astrophysics Data System (ADS)

    Yamamoto, Noriko; Yohachi; Yamashita; Itsumi, Kazuhiro

    2009-07-01

    The mechanical properties of high-temperature-vulcanization silicone (Q) rubber doped with zinc oxide (ZnO) fine powders have been investigated to develop an acoustic lens material with high reliability. The ZnO-doped Q rubber with an acoustic impedance (Z) of 1.46×106 kg·m-2·s-1 showed a tear strength of 43 N/mm and an elongation of 560%. These mechanical property values were about 3 times higher than those of conventional acoustic Q lens materials. The ZnO-doped Q rubbers also showed a lower abrasion loss. These superior characteristics are attributable to the microstructure with fewer origins of breaks; few pores and spherical fine ZnO powder. The high mechanical properties of ZnO-doped Q rubber acoustic lenses enable higher performance during long-life and safe operation during diagnosis using medical array probe applications.

  5. A model for the high-temperature transport properties of heavily doped n-type silicon-germanium alloys

    NASA Technical Reports Server (NTRS)

    Vining, Cronin B.

    1991-01-01

    A model is presented for the high-temperature transport properties of large-grain-size, heavily doped n-type silicon-germanium alloys. Electron and phonon transport coefficients are calculated using standard Boltzmann equation expressions in the relaxation time approximation. Good agreement with experiment is found by considering acoustic phonon and ionized impurity scattering for electrons, and phonon-phonon, point defect, and electron-phonon scattering for phonons. The parameters describing electron transport in heavily doped and lightly doped materials are significantly different and suggest that most carriers in heavily doped materials are in a band formed largely from impurity states. The maximum dimensionless thermoelectric figure of merit for single-crystal, n-type Si(0.8)Ge(0.2) at 1300 K is estimated at ZT about 1.13 with an optimum carrier concentration of n about 2.9 x 10 to the 20th/cu cm.

  6. Temperature- and doping-concentration-dependent characteristics of junctionless gate-all-around polycrystalline-silicon thin-film transistors

    NASA Astrophysics Data System (ADS)

    Tso, Chia-Tsung; Liu, Tung-Yu; Pan, Fu-Ming; Sheu, Jeng-Tzong

    2017-04-01

    The temperature effects of both gate-all-around polycrystalline silicon nanowire (GAA poly-Si NW) junctionless (JL) and inversion mode (IM) transistor devices at various temperatures (77–410 K) were investigated. The electrical characteristics of these devices, such as subthreshold swing (SS), threshold voltage (V th), and drain-induced barrier lowering (DIBL), were also characterized and compared in this study. Moreover, JL devices with different doping concentrations at various temperatures were also discussed. Both V th and I on showed significant doping concentration dependences for JL devices with doping concentrations of 1 × 1019 and 5 × 1019 cm‑3. However, the electrical characteristics of JL devices showed less thermal sensitivity when the doping concentration reached 1020 cm‑3.

  7. First-principles calculations of carbon clathrates: Comparison to silicon and germanium clathrates

    NASA Astrophysics Data System (ADS)

    Connétable, Damien

    2010-08-01

    We employ state-of-the-art first-principles calculations based on density-functional theory and density-functional perturbation theory to investigate relevant physical properties and phase diagram of the free guest type-I (X-46) and type-II (X-34) carbon clathrates. Their properties and those of silicon and germanium diamonds, and clathrates have been computed and compared within the same approach. We briefly present and discuss their structural, cohesive, and electronic properties. In particular, we present different results about electronic properties of carbon clathrates. From the symmetry analysis of electronic states around the band gap, we deduce their optical properties, and we forecast the effects of hypothetical-doped elements on their electronic band gap. We then report first-principles calculations of vibrational, thermodynamical, and elastic properties. Whereas vibrational properties of Si and Ge systems can be linked through their atomic weight ratio, we show that the vibrational properties of carbon structures differ strongly. Raman and infrared spectra of all clathrates are also calculated and compared. The effects of pressure and temperature on thermodynamical properties (heat capacity, entropy, thermal expansion, etc.) within static and quasiharmonic approximations are investigated. It is shown that thermodynamical properties of carbon clathrates and diamond present a similar evolution up to high pressures (100 GPa) and over a large range of temperatures ([0, 1500] K). Then we deduce the equilibrium phase diagram (P,T) of C-2/C-34/C-46. We conclude the paper with a presentation of elastic properties computed from acoustic slopes.

  8. Silicon nanoparticles encapsulated in hollow graphitized carbon nanofibers for lithium ion battery anodes.

    PubMed

    Kong, Junhua; Yee, Wu Aik; Wei, Yuefan; Yang, Liping; Ang, Jia Ming; Phua, Si Lei; Wong, Siew Yee; Zhou, Rui; Dong, Yuliang; Li, Xu; Lu, Xuehong

    2013-04-07

    Silicon (Si) is a promising material for lithium ion battery (LIB) anodes due to its high specific capacity. To overcome its shortcomings such as insulation property and large volume change during the charge-discharge process, a novel hybrid system, Si nanoparticles encapsulated in hollow graphitized carbon nanofibers, is studied. First, electrospun polyacrylonitrile (PAN)-Si hybrid nanofibers were obtained using water as the collector. The loose nanofiber lumps suspended in water have large inter-fiber distance, allowing in situ coating of a thin layer of polydopamine (PDA), the source for graphitized carbon, uniformly throughout the system. The designed morphology and structure were then realized by etching and calcination, and the morphology and structure were subsequently verified by various analytical techniques. Electrochemical measurements show that the resulting hollow hybrid nanofibers (C-PDA-Si NFs) exhibit much better cycling stability and rate capacity than conventional C/Si nanofibers derived by electrospinning of PAN-Si followed by calcination. For instance, the capacity of C-PDA-Si NFs is as high as 72.6% of the theoretical capacity after 50 cycles, and a high capacity of 500 mA h g(-1) can be delivered at a current density of 5 A g(-1). The significantly improved electrochemical properties of C-PDA-Si NFs are due to the excellent electrical conductivity of the carbonized PDA (C-PDA) shell that compensates for the insulation property of Si, the high electrochemical activity of C-PDA, which has a layered structure and is N-doped, the hollow nature of the nanofibers and small size of Si nanoparticles that ensure smooth insertion-extraction of lithium ions and more complete alloying with them, as well as the buffering effect of the remaining PAN-derived carbon around the Si nanoparticles, which stabilizes the structure.

  9. Oxidative unzipping of stacked nitrogen-doped carbon nanotube cups.

    PubMed

    Dong, Haifeng; Zhao, Yong; Tang, Yifan; Burkert, Seth C; Star, Alexander

    2015-05-27

    We demonstrate a facile synthesis of different nanostructures by oxidative unzipping of stacked nitrogen-doped carbon nanotube cups (NCNCs). Depending on the initial number of stacked-cup segments, this method can yield graphene nanosheets (GNSs) or hybrid nanostructures comprised of graphene nanoribbons partially unzipped from a central nanotube core. Due to the stacked-cup structure of as-synthesized NCNCs, preventing complete exposure of graphitic planes, the unzipping mechanism is hindered, resulting in incomplete unzipping; however, individual, separated NCNCs are completely unzipped, yielding individual nitrogen-doped GNSs. Graphene-based materials have been employed as electrocatalysts for many important chemical reactions, and it has been proposed that increasing the reactive edges results in more efficient electrocatalysis. In this paper, we apply these graphene conjugates as electrocatalysts for the oxygen reduction reaction (ORR) to determine how the increase in reactive edges affects the electrocatalytic activity. This investigation introduces a new method for the improvement of ORR electrocatalysts by using nitrogen dopants more effectively, allowing for enhanced ORR performance with lower overall nitrogen content. Additionally, the GNSs were functionalized with gold nanoparticles (GNPs), resulting in a GNS/GNP hybrid, which shows efficient surface-enhanced Raman scattering and expands the scope of its application in advanced device fabrication and biosensing.

  10. Negative Magnetoresistance in Silicon Doped AlAs-GaAs Short Period Superlattices

    NASA Astrophysics Data System (ADS)

    Gougam, A. B.; Sicart, J.; Robert, J. L.

    1997-01-01

    We report the negative magnetoresistance effect observed in GaAs-AlAs short period superlattices doped selectively in GaAs or in AlAs or doped uniformly. This doping technique introduces deep donor states with different thermal activation energies. Consequently, the low temperature electron concentration is different in samples doped at the same silicon concentration. We find the magnetic correction to the conductivity increasing with the free carrier density. The low magnetic field data are interpreted in the framework of a weak localization model derived from the Kawabata theory in 3D anisotropic systems. The theory of effective mass in superlattices is applied and we find that the inelastic scattering time does not depend on the doping modulation. Nous présentons des résultats de magnétorésistance négative obtenus avec des superréseaux à courte période de GaAs-AlAs dopés au silicium sélectivement dans GaAs ou AlAs et uniformément dopés. Ce type de dopage permet d'introduire des niveaux donneurs d'énergie d'activation thermique différents. Ceci permet d'obtenir à basse température des concentrations d'électrons différentes à partir d'une concentration initiale de dopant identique pour tous les échantillons. Nous mettons ainsi en évidence une correction magnétique à la conductivité qui augmente avec la densité de porteurs libres. Les mesures à faible champ sont interprétées en termes de faible localisation à partir du modèle de Kawabata 3D dans lequel l'anisotropie de masse effective du superréseau est introduite. Nous trouvons que le temps de diffusion inélastique ne dépend pas de la modulation de dopage.

  11. Binary and ternary doping of nitrogen, boron, and phosphorus into carbon for enhancing electrochemical oxygen reduction activity.

    PubMed

    Choi, Chang Hyuck; Park, Sung Hyeon; Woo, Seong Ihl

    2012-08-28

    N-doped carbon, a promising alternative to Pt catalyst for oxygen reduction reactions (ORRs) in acidic media, is modified in order to increase its catalytic activity through the additional doping of B and P at the carbon growth step. This additional doping alters the electrical, physical, and morphological properties of the carbon. The B-doping reinforces the sp(2)-structure of graphite and increases the portion of pyridinic-N sites in the carbon lattice, whereas P-doping enhances the charge delocalization of the carbon atoms and produces carbon structures with many edge sites. These electrical and physical alternations of the N-doped carbon are more favorable for the reduction of the oxygen on the carbon surface. Compared with N-doped carbon, B,N-doped or P,N-doped carbon shows 1.2 or 2.1 times higher ORR activity at 0.6 V (vs RHE) in acidic media. The most active catalyst in the reaction is the ternary-doped carbon (B,P,N-doped carbon), which records -6.0 mA/mg of mass activity at 0.6 V (vs RHE), and it is 2.3 times higher than that of the N-doped carbon. These results imply that the binary or ternary doping of B and P with N into carbon induces remarkable performance enhancements, and the charge delocalization of the carbon atoms or number of edge sites of the carbon is a significant factor in deciding the oxygen reduction activity in carbon-based catalysts.

  12. Facile Aqueous Route to Nitrogen-Doped Mesoporous Carbons.

    PubMed

    Zhang, Jianan; Song, Yang; Kopeć, Maciej; Lee, Jaejun; Wang, Zongyu; Liu, Siyuan; Yan, Jiajun; Yuan, Rui; Kowalewski, Tomasz; Bockstaller, Michael R; Matyjaszewski, Krzysztof

    2017-09-20

    An aqueous-based approach for the scalable synthesis of nitrogen-doped porous carbons with high specific surface area (SSA) and high nitrogen content is presented. Low molecular weight polyacrylonitrile (PAN) is solubilized in water in the presence of ZnCl2 that also acts as a volatile porogen during PAN pyrolysis to form mesoporous structures with significantly increased SSA. By templating with commercial SiO2 nanoparticles, nanocellulose fillers or filter paper, nanocarbons with SSA = 1776, 1366, and 1501 m(2)/g, respectively and 10 wt % N content were prepared. The materials formed by this benign process showed excellent catalytic activity in oxygen reduction reaction via the four-electron mechanism.

  13. Porous boron-doped diamond/carbon nanotube electrodes.

    PubMed

    Zanin, H; May, P W; Fermin, D J; Plana, D; Vieira, S M C; Milne, W I; Corat, E J

    2014-01-22

    Nanostructuring boron-doped diamond (BDD) films increases their sensitivity and performance when used as electrodes in electrochemical environments. We have developed a method to produce such nanostructured, porous electrodes by depositing BDD thin film onto a densely packed "forest" of vertically aligned multiwalled carbon nanotubes (CNTs). The CNTs had previously been exposed to a suspension of nanodiamond in methanol causing them to clump together into "teepee" or "honeycomb" structures. These nanostructured CNT/BDD composite electrodes have been extensively characterized by scanning electron microscopy, Raman spectroscopy, cyclic voltammetry, and electrochemical impedance spectroscopy. Not only do these electrodes possess the excellent, well-known characteristics associated with BDD (large potential window, chemical inertness, low background levels), but also they have electroactive areas and double-layer capacitance values ∼450 times greater than those for the equivalent flat BDD electrodes.

  14. Fabrication and Doping Methods for Silicon Nano- and Micropillar Arrays for Solar-Cell Applications: A Review.

    PubMed

    Elbersen, Rick; Vijselaar, Wouter; Tiggelaar, Roald M; Gardeniers, Han; Huskens, Jurriaan

    2015-11-18

    Silicon is one of the main components of commercial solar cells and is used in many other solar-light-harvesting devices. The overall efficiency of these devices can be increased by the use of structured surfaces that contain nanometer- to micrometer-sized pillars with radial p/n junctions. High densities of such structures greatly enhance the light-absorbing properties of the device, whereas the 3D p/n junction geometry shortens the diffusion length of minority carriers and diminishes recombination. Due to the vast silicon nano- and microfabrication toolbox that exists nowadays, many versatile methods for the preparation of such highly structured samples are available. Furthermore, the formation of p/n junctions on structured surfaces is possible by a variety of doping techniques, in large part transferred from microelectronic circuit technology. The right choice of doping method, to achieve good control of junction depth and doping level, can contribute to an improvement of the overall efficiency that can be obtained in devices for energy applications. A review of the state-of-the-art of the fabrication and doping of silicon micro and nanopillars is presented here, as well as of the analysis of the properties and geometry of thus-formed 3D-structured p/n junctions. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. The enhanced efficiency of graphene-silicon solar cells by electric field doping.

    PubMed

    Yu, Xuegong; Yang, Lifei; Lv, Qingmin; Xu, Mingsheng; Chen, Hongzheng; Yang, Deren

    2015-04-28

    The graphene-silicon (Gr-Si) Schottky junction solar cell has been recognized as one of the most low-cost candidates in photovoltaics due to its simple fabrication process. However, the low Gr-Si Schottky barrier height largely limits the power conversion efficiency of Gr-Si solar cells. Here, we demonstrate that electric field doping can be used to tune the work function of a Gr film and therefore improve the photovoltaic performance of the Gr-Si solar cell effectively. The electric field doping effects can be achieved either by connecting the Gr-Si solar cell to an external power supply or by polarizing a ferroelectric polymer layer integrated in the Gr-Si solar cell. Exploration of both of the device architecture designs showed that the power conversion efficiency of Gr-Si solar cells is more than twice of the control Gr-Si solar cells. Our study opens a new avenue for improving the performance of Gr-Si solar cells.

  16. Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures

    NASA Astrophysics Data System (ADS)

    Arezki, Hakim; Boutchich, Mohamed; Alamarguy, David; Madouri, Ali; Alvarez, José; Cabarrocas, Pere Roca i.; Kleider, Jean-Paul; Yao, Fei; Lee, Young Hee

    2016-10-01

    Large-area graphene film is of great interest for a wide spectrum of electronic applications, such as field effect devices, displays, and solar cells, among many others. Here, we fabricated heterostructures composed of graphene (Gr) grown by chemical vapor deposition (CVD) on copper substrate and transferred to SiO2/Si substrates, capped by n- or p-type doped amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition. Using Raman scattering we show that despite the mechanical strain induced by the a-Si:H deposition, the structural integrity of the graphene is preserved. Moreover, Hall effect measurements directly on the embedded graphene show that the electronic properties of CVD graphene can be modulated according to the doping type of the a-Si:H as well as its phase i.e. amorphous or nanocrystalline. The sheet resistance varies from 360 Ω sq-1 to 1260 Ω sq-1 for the (p)-a-Si:H/Gr (n)-a-Si:H/Gr, respectively. We observed a temperature independent hole mobility of up to 1400 cm2 V-1 s-1 indicating that charge impurity is the principal mechanism limiting the transport in this heterostructure. We have demonstrated that embedding CVD graphene under a-Si:H is a viable route for large scale graphene based solar cells or display applications.

  17. Ex situ n and p doping of vertical epitaxial short silicon nanowires by ion implantation

    NASA Astrophysics Data System (ADS)

    Kanungo, Pratyush Das; Kögler, Reinhard; Nguyen-Duc, Kien; Zakharov, Nikolai; Werner, Peter; Gösele, Ulrich

    2009-04-01

    Vertical epitaxial short (200-300 nm long) silicon nanowires (Si NWs) grown by molecular beam epitaxy on Si(111) substrates were separately doped p- and n-type ex situ by implanting with B, P and As ions respectively at room temperature. Multi-energy implantations were used for each case, with fluences of the order of 1013-1014 cm-2, and the NWs were subsequently annealed by rapid thermal annealing (RTA). Transmission electron microscopy showed no residual defect in the volume of the NWs. Electrical measurements of single NWs with a Pt/Ir tip inside a scanning electron microscope (SEM) showed significant increase of electrical conductivity of the implanted NWs compared to that of a nominally undoped NW. The p-type, i.e. B-implanted, NWs showed the conductivity expected from the intended doping level. However, the n-type NWs, i.e. P- and As-implanted ones, showed one to two orders of magnitude lower conductivity. We think that a stronger surface depletion is mainly responsible for this behavior of the n-type NWs.

  18. On the recombination centers of iron-gallium pairs in Ga-doped silicon

    NASA Astrophysics Data System (ADS)

    Nærland, Tine Uberg; Bernardini, Simone; Haug, Halvard; Grini, Sigbjørn; Vines, Lasse; Stoddard, Nathan; Bertoni, Mariana

    2017-08-01

    Gallium (Ga) doped silicon (Si) is becoming a relevant player in solar cell manufacturing thanks to its demonstrated low light-induced degradation, yet little is known about Ga-related recombination centers. In this paper, we study iron (Fe)-related recombination centers in as-grown, high quality, directionally solidified, monocrystalline Ga-doped Si. While no defect states could be detected by deep level transient spectroscopy, lifetime spectroscopy analysis shows that the minority carrier lifetime in as-grown wafers is dominated by low levels of FeGa related defect complexes. FeGa pairs have earlier been shown to occur in two different structural configurations. Herein, we show that in terms of recombination strength, the orthorhombic pair-configuration is dominant over the trigonal pair-configuration for FeGa. Furthermore, the defect energy level in the band gap for the orthorhombic defect center is determined to be EV + 0.09 eV, and the capture cross-section ratio of the same defect center is determined to be 220.

  19. Porosity control in metal-assisted chemical etching of degenerately doped silicon nanowires.

    PubMed

    Balasundaram, Karthik; Sadhu, Jyothi S; Shin, Jae Cheol; Azeredo, Bruno; Chanda, Debashis; Malik, Mohammad; Hsu, Keng; Rogers, John A; Ferreira, Placid; Sinha, Sanjiv; Li, Xiuling

    2012-08-03

    We report the fabrication of degenerately doped silicon (Si) nanowires of different aspect ratios using a simple, low-cost and effective technique that involves metal-assisted chemical etching (MacEtch) combined with soft lithography or thermal dewetting metal patterning. We demonstrate sub-micron diameter Si nanowire arrays with aspect ratios as high as 180:1, and present the challenges in producing solid nanowires using MacEtch as the doping level increases in both p- and n-type Si. We report a systematic reduction in the porosity of these nanowires by adjusting the etching solution composition and temperature. We found that the porosity decreases from top to bottom along the axial direction and increases with etching time. With a MacEtch solution that has a high [HF]:[H(2)O(2)] ratio and low temperature, it is possible to form completely solid nanowires with aspect ratios of less than approximately 10:1. However, further etching to produce longer wires renders the top portion of the nanowires porous.

  20. Porosity control in metal-assisted chemical etching of degenerately doped silicon nanowires

    NASA Astrophysics Data System (ADS)

    Balasundaram, Karthik; Sadhu, Jyothi S.; Shin, Jae Cheol; Azeredo, Bruno; Chanda, Debashis; Malik, Mohammad; Hsu, Keng; Rogers, John A.; Ferreira, Placid; Sinha, Sanjiv; Li, Xiuling

    2012-08-01

    We report the fabrication of degenerately doped silicon (Si) nanowires of different aspect ratios using a simple, low-cost and effective technique that involves metal-assisted chemical etching (MacEtch) combined with soft lithography or thermal dewetting metal patterning. We demonstrate sub-micron diameter Si nanowire arrays with aspect ratios as high as 180:1, and present the challenges in producing solid nanowires using MacEtch as the doping level increases in both p- and n-type Si. We report a systematic reduction in the porosity of these nanowires by adjusting the etching solution composition and temperature. We found that the porosity decreases from top to bottom along the axial direction and increases with etching time. With a MacEtch solution that has a high [HF]:[H2O2] ratio and low temperature, it is possible to form completely solid nanowires with aspect ratios of less than approximately 10:1. However, further etching to produce longer wires renders the top portion of the nanowires porous.