Science.gov

Sample records for carbon ion-implanted diamond

  1. Friction and Wear Properties of As-Deposited and Carbon Ion-Implanted Diamond Films

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1996-01-01

    Recent work on the friction and wear properties of as-deposited and carbon ion-implanted diamond films was reviewed. Diamond films were produced by the microwave plasma chemical vapor deposition (CVD) technique. Diamond films with various grain sizes and surface roughnesses were implanted with carbon ions at 60 keV ion energy, resulting in a dose of 1.2 x 10(exp 17) carbon ions per cm(exp 2). Various analytical techniques, including Raman spectroscopy, proton recoil analysis, Rutherford backscattering, transmission and scanning electron microscopy, X-ray photoelectron spectroscopy, and X-ray diffraction, were utilized to characterize the diamond films. Sliding friction experiments were conducted with a polished natural diamond pin in contact with diamond films in the three environments: humid air (40% relative humidity), dry nitrogen (less than 1 percent relative humidity), and ultrahigh vacuum (10(exp -7) Pa). The CVD diamond films indeed have friction and wear properties similar to those of natural diamond in the three environments. The as-deposited, fine-grain diamond films can be effectively used as self-lubricating, wear-resistant coatings that have low coefficients of friction (0.02 to 0.04) and low wear rates (10(exp -7) to lO(exp -8) mm(exp 3) N(exp -1) m(exp -1)) in both humid air and dry nitrogen. However, they have high coefficients of friction (1.5 to 1.7) and a high wear rate (10(exp -4) mm(exp 7) N(exp -1) m(exp -1)) in ultrahigh vacuum. The carbon ion implantation produced a thin surficial layer (less than 0.1 micron thick) of amorphous, non-diamond carbon on the diamond films. In humid air and dry nitrogen, the ion-implanted, fine and coarse-grain diamond films have a low coefficient of friction (around 0.1) and a low wear rate (10(exp -7) mm(exp 3) N(exp -1) m(exp-1)). Even in ultrahigh vacuum, the presence of the non-diamond carbon layer reduced the coefficient of friction of fine-grain diamond films to 0.1 or lower and the wear rate to 10(exp -6

  2. Friction and Wear Properties of As-deposited and Carbon Ion-implanted Diamond Films

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1994-01-01

    Recent work on the friction and wear properties of as-deposited and carbon ion-implanted diamond films was reviewed. Diamond films were produced by the microwave plasma chemical vapor deposition (CVD) technique. Diamond films with various grain sizes and surface roughnesses were implanted with carbon ions at 60 ke V ion energy, resulting in a dose of 1.2310(exp 17) carbon ions/cm(exp 2). Various analytical techniques, including Raman spectroscopy, proton recoil analysis, Rutherford backscattering, transmission and scanning electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction, were utilized to characterize the diamond films. Sliding friction experiments were conducted with a polished natural diamond pin in contact with diamond films in the three environments: humid air (40 percent relative humidity), dry nitrogen (less than 1 percent relative humidity), and ultrahigh vacuum (10(exp -7) Pa). The CVD diamond films indeed have friction and were properties similar to those of natural diamond in the three environments. The as-deposited, fine-grain diamond films can be effectively used as self-lubricating, wear-resistant coatings that have low coefficients of friction (0.02 to 0.04) and low wear rates (10(exp -7) to 10(exp -8)mm(exp 3)/N-m) in both humid air and dry nitrogen. However, they have high coefficients of friction (1.5 to 1.7) and a high wear rate (10(exp -4)mm(exp 3/N-m) in ultrahigh vacuum. The carbon ion implanation produced a thin surficial layer (less than 0.1 micron thick) of amorphous, nondiamond carbon on the diamond films. In humid air and dry nitrogen, the ion-implanted, fine- and coarse-grain diamond films have a low coefficient of friction (around 0.1) and a low wear rate (10(exp -7)mm(exp 3/N-m). Even in ultrahigh vacuum, the presence of the nondiamond carbon layer reduced the coefficient of friction of fine-grain diamond films to 0.1 or lower and the wear rate to 10(exp -6)mm(exp 3)/N-m. Thus, the carbon ion-implanted, fine

  3. Room temperature diamond-like carbon coatings produced by low energy ion implantation

    NASA Astrophysics Data System (ADS)

    Markwitz, A.; Mohr, B.; Leveneur, J.

    2014-07-01

    Nanometre-smooth diamond-like carbon coatings (DLC) were produced at room temperature with ion implantation using 6 kV C3Hy+ ion beams. Ion beam analysis measurements showed that the coatings contain no heavy Z impurities at the level of 100 ppm, have a homogeneous stoichiometry in depth and a hydrogen concentration of typically 25 at.%. High resolution TEM analysis showed high quality and atomically flat amorphous coatings on wafer silicon. Combined TEM and RBS analysis gave a coating density of 3.25 g cm-3. Raman spectroscopy was performed to probe for sp2/sp3 bonds in the coatings. The results indicate that low energy ion implantation with 6 kV produces hydrogenated amorphous carbon coatings with a sp3 content of about 20%. Results highlight the opportunity of developing room temperature DLC coatings with ion beam technology for industrial applications.

  4. Adherent diamond like carbon coatings on metals via plasma source ion implantation

    SciTech Connect

    Walter, K.C.; Nastasi, M.; Munson, C.P.

    1996-12-01

    Various techniques are currently used to produce diamond-like carbon (DLC) coatings on various materials. Many of these techniques use metallic interlayers, such as Ti or Si, to improve the adhesion of a DLC coating to a ferrous substrate. An alternative processing route would be to use plasma source ion implantation (PSII) to create a carbon composition gradient in the surface of the ferrous material to serve as the interface for a DLC coating. The need for interlayer deposition is eliminated by using a such a graded interfaces PSII approach has been used to form adherent DLC coatings on magnesium, aluminum, silicon, titanium, chromium, brass, nickel, and tungsten. A PSII process tailored to create a graded interface allows deposition of adherent DLC coatings even on metals that exhibit a positive heat of formation with carbon, such as magnesium, iron, brass and nickel.

  5. Physical and Tribological Characteristics of Ion-Implanted Diamond Films

    NASA Technical Reports Server (NTRS)

    Miyoshi, K.; Heidger, S.; Korenyi-Both, A. L.; Jayne, D. T.; Herrera-Fierro, P.; Shogrin, B.; Wilbur, P. J.; Wu, R. L. C.; Garscadden, A.; Barnes, P. N.

    1994-01-01

    Unidirectional sliding friction experiments were conducted with a natural, polished diamond pin in contact with both as-deposited and carbon-ion-implanted diamond films in ultrahigh vacuum. Diamond films were deposited on silicon, silicon carbide, and silicon nitride by microwave-plasma-assisted chemical vapor deposition. The as-deposited diamond films were impacted with carbon ions at an accelerating energy of 60 keV and a current density of 50 micron A/cm(exp 2) for approximately 6 min, resulting in a dose of 1.2 x 10(exp 17) carbon ions/cm(exp 2). The results indicate that the carbon ion implantation produced a thin surface layer of amorphous, nondiamond carbon. The nondiamond carbon greatly decreased both friction and wear of the diamond films. The coefficients of friction for the carbon-ion-implanted, fine-grain diamond films were less than 0.1, factors of 20 to 30 lower than those for the as-deposited, fine-grain diamond films. The coefficients of friction for the carbon-ion-implanted, coarse-grain diamond films were approximately 0.35, a factor of five lower than those for the as-deposited, coarse-grain diamond films. The wear rates for the carbon-ion-implanted, diamond films were on the order of 10(exp -6) mm(exp 3)/Nm, factors of 30 to 80 lower than that for the as-deposited diamond films, regardless of grain size. The friction of the carbon-ion-implanted diamond films was greatly reduced because the amorphous, nondiamond carbon, which had a low shear strength, was restricted to the surface layers (less than 0.1 micron thick) and because the underlying diamond materials retained their high hardness. In conclusion, the carbon-ion-implanted, fine-grain diamond films can be used effectively as wear resistant, self-lubricating coatings for ceramics, such as silicon nitride and silicon carbide, in ultrahigh vacuum.

  6. Ion implantation of diamond: Damage, doping, and lift-off

    SciTech Connect

    Parikh, N.R.; McGucken, E.; Swanson, M.L.; Hunn, J.D.; White, C.W.; Zuhr, R.A.

    1993-09-01

    In order to make good quality economical diamond electronic devices, it is essential to grow films and to dope these films to obtain n- and p- type conductivity. This review talk discuss first doping by ion implantation plus annealing of the implantation damage, and second flow to make large area single crystal diamonds. C implantation damage below an estimated Frenkel defect concentration of 7% could be recovered almost completely by annealing at 950C. For a defect concentration between 7 and 10%, a stable damage form of diamond (``green diamond``) was formed by annealing. At still higher damage levels, the diamond graphitized. To introduce p-type doping, we have co-implanted B and C into natural diamond at 77K, followed by annealing up to 1100C. The resulting semiconducting material has electrical properties similar to those of natural B-doped diamond. To create n-type diamond, we have implanted Na{sup +}, P+ and As{sup +} ions and have observed semiconducting behavior. This has been compared with carbon or noble element implantation, in an attempt to isolate the effect of radiation damage. Recently, in order to obtain large area signal crystals, we have developed a novel technique for removing thin layers of diamond from bulk or homoepitaxial films. This method consists of ion implantation, followed by selective etching. High energy (4--5 MeV) implantation of carbon or oxygen ions creates a well-defined layer of damaged diamond buried at a controlled depth. This layer is graphitized and selectivity etched either by heating at 550C in an oxygen ambient or by electrolysis. This process successfully lifts off the diamond plate above the graphite layer. The lift-off method, combined with well-established homoepitaxial growth processes, has potential for fabrication of large area single-crystal diamond sheets.

  7. Ion-Implanted Diamond Films and Their Tribological Properties

    NASA Technical Reports Server (NTRS)

    Wu, Richard L. C.; Miyoshi, Kazuhisa; Korenyi-Both, Andras L.; Garscadden, Alan; Barnes, Paul N.

    1993-01-01

    This paper reports the physical characterization and tribological evaluation of ion-implanted diamond films. Diamond films were produced by microwave plasma, chemical vapor deposition technique. Diamond films with various grain sizes (0.3 and 3 microns) and roughness (9.1 and 92.1 nm r.m.s. respectively) were implanted with C(+) (m/e = 12) at an ion energy of 160 eV and a fluence of 6.72 x 10(exp 17) ions/sq cm. Unidirectional sliding friction experiments were conducted in ultrahigh vacuum (6.6 x 10(exp -7)Pa), dry nitrogen and humid air (40% RH) environments. The effects of C(+) ion bombardment on fine and coarse-grained diamond films are as follows: the surface morphology of the diamond films did not change; the surface roughness increased (16.3 and 135.3 nm r.m.s.); the diamond structures were damaged and formed a thin layer of amorphous non-diamond carbon; the friction coefficients dramatically decreased in the ultrahigh vacuum (0.1 and 0.4); the friction coefficients decreased slightly in the dry nitrogen and humid air environments.

  8. Structural, mechanical and hydrophobic properties of fluorine-doped diamond-like carbon films synthesized by plasma immersion ion implantation and deposition (PIII?D)

    NASA Astrophysics Data System (ADS)

    Yao, Zh. Q.; Yang, P.; Huang, N.; Sun, H.; Wang, J.

    2004-05-01

    Fluorine-doped diamond-like carbon (a-C:F) films with different fluorine content were fabricated on Si wafer by plasma immersion ion implantation and deposition (PIII-D). Film composition and structure were characterized by X-ray photoelectron spectroscopy (XPS) and Raman scattering spectroscopy. Surface morphology and roughness were analyzed by atomic force microscopy (AFM). Hardness and scratch resistance were measured by nano-indentation and nano-scratch, respectively. Water contact angles were measured by sessile drop method. With the increase of the CF 4 flux, fluorine content was gradually increased to the film. Raman spectra indicates that these films have a diamond-like structure. The addition of fluorine to diamond-like carbon films had a critical influence on the film properties. The film surface becomes more smoother due to the etching behavior of F +. Hardness was significantly reduced, while the scratch resistance results show that these films have a fairly good adhesion to the substrate. Evident improvements of the hydrophobicity have been made to these films, with contact angles of double-stilled water approaching that of polytetrafluoroethylene (PTFE). Our study suggests that broad application regions of the fluorine-doped amorphous carbon films with diamond-like structure, synthesized by PIII-D, can be extended by combining the non-wetting properties and mechanical properties which are far superior to those of PTFE.

  9. Bias in bonding behavior among boron, carbon, and nitrogen atoms in ion implanted a-BN, a-BC, and diamond like carbon films

    SciTech Connect

    Genisel, Mustafa Fatih; Uddin, Md. Nizam; Say, Zafer; Bengu, Erman; Kulakci, Mustafa; Turan, Rasit; Gulseren, Oguz

    2011-10-01

    In this study, we implanted N{sup +} and N{sub 2}{sup +} ions into sputter deposited amorphous boron carbide (a-BC) and diamond like carbon (DLC) thin films in an effort to understand the chemical bonding involved and investigate possible phase separation routes in boron carbon nitride (BCN) films. In addition, we investigated the effect of implanted C{sup +} ions in sputter deposited amorphous boron nitride (a-BN) films. Implanted ion energies for all ion species were set at 40 KeV. Implanted films were then analyzed using x-ray photoelectron spectroscopy (XPS). The changes in the chemical composition and bonding chemistry due to ion-implantation were examined at different depths of the films using sequential ion-beam etching and high resolution XPS analysis cycles. A comparative analysis has been made with the results from sputter deposited BCN films suggesting that implanted nitrogen and carbon atoms behaved very similar to nitrogen and carbon atoms in sputter deposited BCN films. We found that implanted nitrogen atoms would prefer bonding to carbon atoms in the films only if there is no boron atom in the vicinity or after all available boron atoms have been saturated with nitrogen. Implanted carbon atoms also preferred to either bond with available boron atoms or, more likely bonded with other implanted carbon atoms. These results were also supported by ab-initio density functional theory calculations which indicated that carbon-carbon bonds were energetically preferable to carbon-boron and carbon-nitrogen bonds.

  10. Characteristics of diamond-like carbon film synthesized on AISI 304 austenite stainless steel using plasma immersion ion implantation and deposition

    NASA Astrophysics Data System (ADS)

    Liang, J. H.; Chen, M. H.; Tsai, W. F.; Lee, S. C.; Ai, C. F.

    2007-04-01

    This study examines the characteristics of diamond-like carbon (DLC) film synthesized on AISI 304 austenite stainless steel by means of a hybrid process of plasma immersion ion implantation and deposition (PIII&D) maintained at 60 °C. The former and latter processes under investigation were carried out using methane (0-20 kV) and acetylene (1-2 kV, 0.13-0.40 Pa) plasmas, respectively. Glow discharge spectrometry (GDS), Raman scattering spectroscopy (RSS), atomic force microscopy (AFM), a nano-indentation probe (NIP) and a Rockwell-C hardness tester were employed to characterize, respectively, elemental depth profiles, sp3-to-sp2 ratio, surface morphology, hardness and adhesion strength of the DLC specimen. The results revealed that the mixing layer at the interface generated by plasma immersion ion implantation of methane at a higher voltage could enhance adhesive strength of the DLC film to the substrate. Furthermore, a higher sp3-to-sp2 ratio, a smoother surface, greater hardness, but weaker adhesion strength were obtained for the DLC film synthesized using plasma immersion ion deposition of acetylene at a lower bias voltage or higher gas pressure.

  11. Mechanical stresses and amorphization of ion-implanted diamond

    NASA Astrophysics Data System (ADS)

    Khmelnitsky, R. A.; Dravin, V. A.; Tal, A. A.; Latushko, M. I.; Khomich, A. A.; Khomich, A. V.; Trushin, A. S.; Alekseev, A. A.; Terentiev, S. A.

    2013-06-01

    Scanning white light interferometry and Raman spectroscopy were used to investigate the mechanical stresses and structural changes in ion-implanted natural diamonds with different impurity content. The uniform distribution of radiation defects in implanted area was obtained by the regime of multiple-energy implantation of keV He+ ions. A modification of Bosia's et al. (Nucl. Instrum. Meth. B 268 (2010) 2991) method for determining the internal stresses and the density variation in an ion-implanted diamond layer was proposed that suggests measuring, in addition to the surface swelling of a diamond plate, the radius of curvature of the plate. It is shown that, under multiple-energy implantation of He+, mechanical stresses in the implanted layer may be as high as 12 GPa. It is shown that radiation damage reaches saturation for the implantation fluence characteristic of amorphization of diamond but is appreciably lower than the graphitization threshold.

  12. Preparation of Ag-containing diamond-like carbon films on the interior surface of tubes by a combined method of plasma source ion implantation and DC sputtering

    NASA Astrophysics Data System (ADS)

    Hatada, R.; Flege, S.; Bobrich, A.; Ensinger, W.; Dietz, C.; Baba, K.; Sawase, T.; Watamoto, T.; Matsutani, T.

    2014-08-01

    Adhesive diamond-like carbon (DLC) films can be prepared by plasma source ion implantation (PSII), which is also suitable for the treatment of the inner surface of a tube. Incorporation of a metal into the DLC film provides a possibility to change the characteristics of the DLC film. One source for the metal is DC sputtering. In this study PSII and DC sputtering were combined to prepare DLC films containing low concentrations of Ag on the interior surfaces of stainless steel tubes. A DLC film was deposited using a C2H4 plasma with the help of an auxiliary electrode inside of the tube. This electrode was then used as a target for the DC sputtering. A mixture of the gases Ar and C2H4 was used to sputter the silver. By changing the gas flow ratios and process time, the resulting Ag content of the films could be varied. Sample characterizations were performed by X-ray photoelectron spectroscopy, secondary ion mass spectrometry, atomic force microscopy and Raman spectroscopy. Additionally, a ball-on-disk test was performed to investigate the tribological properties of the films. The antibacterial activity was determined using Staphylococcus aureus bacteria.

  13. Hemocompatibility of nitrogen-doped, hydrogen-free diamond-like carbon prepared by nitrogen plasma immersion ion implantation-deposition.

    PubMed

    Kwok, Sunny C H; Yang, Ping; Wang, Jin; Liu, Xuanyong; Chu, Paul K

    2004-07-01

    Amorphous hydrogenated carbon (a-C:H) has been shown to be a potential material in biomedical devices such as artificial heart valves, bone implants, and so on because of its chemical inertness, low coefficient of friction, high wear resistance, and good biocompatibility. However, the biomedical characteristics such as blood compatibility of doped hydrogen-free diamond-like carbon (DLC) have not been investigated in details. We recently began to investigate the potential use of nitrogen-doped, hydrogen-free DLC in artificial heart valves. In our experiments, a series of hydrogen-free DLC films doped with nitrogen were synthesized by plasma immersion ion implantation-deposition (PIII-D) utilizing a pulsed vacuum arc plasma source and different N to Ar (FN/FAr) gas mixtures in the plasma chamber. The structures and properties of the film were evaluated by Raman spectroscopy, Rutherford backscattering spectrometry (RBS), and X-ray photoelectron spectroscopy (XPS). To assess the blood compatibility of the films and the impact on the blood compatibility by the presence of nitrogen, platelet adhesion tests were conducted. Our results indicate that the blood compatibility of both hydrogen-free carbon films (a-C) and amorphous carbon nitride films are better than that of low-temperature isotropic pyrolytic carbon (LTIC). The experimental results are consistent with the relative theory of interfacial energy and surface tension including both dispersion and polar components. Our results also indicate that an optimal fraction of sp2 bonding is desirable, but an excessively high nitrogen concentration degrades the properties to an extent that the biocompatibility can be worse than that of LTIC. Copyright 2004 Wiley Periodicals, Inc.

  14. Erbium ion implantation into diamond - measurement and modelling of the crystal structure.

    PubMed

    Cajzl, Jakub; Nekvindová, Pavla; Macková, Anna; Malinský, Petr; Sedmidubský, David; Hušák, Michal; Remeš, Zdeněk; Varga, Marián; Kromka, Alexander; Böttger, Roman; Oswald, Jiří

    2017-02-22

    Diamond is proposed as an extraordinary material usable in interdisciplinary fields, especially in optics and photonics. In this contribution we focus on the doping of diamond with erbium as an optically active centre. In the theoretical part of the study based on DFT simulations we have developed two Er-doped diamond structural models with 0 to 4 carbon vacancies in the vicinity of the Er atom and performed geometry optimizations by the calculation of cohesive energies and defect formation energies. The theoretical results showed an excellent agreement between the calculated and experimental cohesive energies for the parent diamond. The highest values of cohesive energies and the lowest values of defect formation energies were obtained for models with erbium in the substitutional carbon position with 1 or 3 vacancies in the vicinity of the erbium atom. From the geometry optimization the structural model with 1 vacancy had an octahedral symmetry whereas the model with 3 vacancies had a coordination of 10 forming a trigonal structure with a hexagonal ring. In the experimental part, erbium doped diamond crystal samples were prepared by ion implantation of Er(+) ions using ion implantation fluences ranging from 1 × 10(14) ions per cm(2) to 5 × 10(15) ions per cm(2). The experimental results revealed a high degree of diamond structural damage after the ion implantation process reaching up to 69% of disordered atoms in the samples. The prepared Er-doped diamond samples annealed at the temperatures of 400, 600 and 800 °C in a vacuum revealed clear luminescence, where the 〈110〉 cut sample has approximately 6-7 times higher luminescence intensity than the 〈001〉 cut sample with the same ion implantation fluence. The reported results are the first demonstration of the Er luminescence in the single crystal diamond structure for the near-infrared spectral region.

  15. Effects of electrical conductivity of substrate materials on microstructure of diamond-like carbon films prepared by bipolar-type plasma based ion implantation

    NASA Astrophysics Data System (ADS)

    Nakao, S.; Sonoda, T.

    2013-03-01

    Diamond-like carbon (DLC) films are prepared by a bipolar-type plasma based ion implantation, and the structural differences between DLC films deposited on different electrical conductive substrates, i.e., conductive Si wafers and insulating glass plates are examined by Raman spectroscopy and x-ray photo emission spectroscopy (XPS). In the Raman measurements, graphite (G) and disorder (D) peaks are observed for both samples. However, the additional photo luminescence is overlapped on the spectra in the case of on-glass sample. To elucidate the structural difference, the intensity ratio of D to G peak (I(D)/I(G)), G peak position and full width at half maximum (FWHM) are obtained by curve fitting using Gaussian function and linear baseline. It is found that the I(D)/I(G) is lower, G peak position is higher and FWHM of G peak is narrower for on-glass sample than for on-Si sample. According to Robertson [1], lower I(D)/I(G) seems more sp3 C-C bonding in amount for on-glass sample. In contrast, higher G peak position and narrower FWHM of G peak suggest less sp3 C-C bonding in amount for on-glass sample. The results of XPS analysis with C1s spectra reveal that sp3 ratio, i.e., the intensity ratio of sp3/(sp3+sp2) is smaller for on-glass sample than for on-Si sample. The inconsistency of the trend between I(D)/I(G) and other parameters (G peak position and FWHM of G peak) might be caused by the overlap of photo luminescence signal on Raman spectrum as to on-glass sample. From these results, it is considered that sp3 C-C bonding is reduced in amount when using insulating substrate in comparison with conductive substrate.

  16. Activation of boron-dopant atoms in ion-implanted diamonds

    NASA Astrophysics Data System (ADS)

    Prins, Johan F.

    1988-09-01

    Different ratios of boron to carbon ions were implanted into diamond maintained at liquid-nitrogen temperature. After implantation, the diamonds were heated to 500 °C by dropping them onto a platform situated in a vertical tube furnace, and then annealed for 1 h. This was followed by a further anneal at 1200 °C in an argon atmosphere. It was found that under suitable conditions optical and electrical properties could be obtained which correlated with those found in natural semiconducting diamond. Thermally activated electrical conduction could, for instance, be established at an activation energy of ~0.37 eV, which corresponds to the value measured for substitutional boron acceptors in diamond. Owing to the annealing cycle used, a relatively large amount of products resulting from radiation damage remained, which, in the carbon-ion-implanted diamond, manifested itself by increased optical absorption at short wavelengths. The results indicate that the product responsible for this absorption may be acting as a donor center situated at about 4 eV below the conduction band. Thermal electromotive-force measurements correlate with the movement of holes in the valence band.

  17. Formation of silicon carbide and diamond nanoparticles in the surface layer of a silicon target during short-pulse carbon ion implantation

    NASA Astrophysics Data System (ADS)

    Remnev, G. E.; Ivanov, Yu. F.; Naiden, E. P.; Saltymakov, M. S.; Stepanov, A. V.; Shtan'ko, V. F.

    2009-04-01

    Synthesis of silicon carbide and diamond nanoparticles is studied during short-pulse implantation of carbon ions and protons into a silicon target. The experiments are carried out using a TEMP source of pulsed powerful ion beams based on a magnetically insulated diode with radial magnetic field B r . The beam parameters are as follows: the ion energy is 300 keV, the pulse duration is 80 ns, the beam consists of carbon ions and protons, and the ion current density is 30 A/cm2. Single-crystal silicon wafers serve as a target. SiC nanoparticles and nanodiamonds form in the surface layer of silicon subjected to more than 100 pulses. The average coherent domain sizes in the SiC particles and nanodiamonds are 12-16 and 8-9 nm, respectively.

  18. A diffraction grating created in diamond substrate by boron ion implantation

    NASA Astrophysics Data System (ADS)

    Stepanov, A. L.; Nuzhdin, V. I.; Galyautdinov, M. F.; Kurbatova, N. V.; Valeev, V. F.; Vorobev, V. V.; Osin, Yu. N.

    2017-01-01

    This work is devoted to new method of manufacturing of diffractive optical elements (gratings). A grating was formed in a diamond substrate by implantation with boron ions through a mask. Ion implantation led to the graphitization of diamond in unmasked regions and resulted in swelling of the irradiated layer. The formation of periodic graphitized surface microstructures on the diamond substrate was confirmed by optical, electron, and atomic force microscopy. The efficiency of operation of the obtained diffractive optical element was demonstrated by probing with He-Ne laser radiation.

  19. Fabrication of Graphene Using Carbon Ion Implantation

    NASA Astrophysics Data System (ADS)

    Colon, Tomeka; Smith, Cydale; Muntele, Claudiu

    2012-02-01

    Graphene is a flat monolayer of carbon atoms tightly packed into a two-dimensional (2D) honeycomb lattice and is a basic building block for graphitic materials of all other dimensionalities. It can be wrapped up into 0D fullerenes, rolled into 1D nanotubes, or stacked into 3D graphite. Graphene's high electrical conductivity and high optical transparency make it a candidate for transparent conducting electrodes, required for such applications as touchscreens, liquid crystal displays, organic photovoltaic cells, and organic light-emitting diodes. In particular, graphene's mechanical strength and flexibility are advantageous compared to indium tin oxide, which is brittle, and graphene films may be deposited from solution over large areas. One method to grow epitaxial graphene is by starting with single crystal silicon carbide (SiC). When SiC is heated under certain conditions, silicon evaporates leaving behind carbon that reorganizes into layers of graphene. Here we report on an alternate method of producing graphene by using low energy carbon implantation in a nickel layer deposited on silicon dioxide mechanical support, followed by heat treatment in a reducing atmosphere to induce carbon migration and self-assembly. We used high resolution RBS and Raman spectroscopy for process and sample characterization. Details will be discussed during the meeting.

  20. Graphitization and related variable-range-hopping conduction in ion-implanted diamond

    NASA Astrophysics Data System (ADS)

    Prins, Johan F.

    2001-07-01

    Variable-range-hopping (VRH) conduction that has been ascribed to the formation of graphite sp2 bonds, can be generated in diamond by means of high dose ion implantation. With increasing implantation temperature, the ion doses required to generate this conduction increase owing to some form of self-annealing. Similar behaviour has been reported for the formation of amorphous material in silicon. Morehead and Crowder (1970 Radiat. Eff. 6 27) developed a model based on displacement spikes to describe this process in silicon. Prawer and Kalish (1995 Phys. Rev. B 51 15711) adapted this model to describe the onset of VRH conduction in diamonds that they had implanted with 100 keV C+ and 320 keV Xe+ at different temperatures. In this study it is assumed that the latter ions could not have formed displacement spikes in diamond. Equations, based on interstitial-vacancy generation and recombination, are then derived to describe the processes of damage formation and annealing in diamond during ion implantation, and applied to the data of Prawer and Kalish. The model fits the latter data well, and is also consistent with recent results on interstitial-vacancy generation, and the interactions of these defects, in electron-irradiated diamonds.

  1. Enhanced electron field emission properties of conducting ultrananocrystalline diamond films after Cu and Au ion implantation.

    PubMed

    Sankaran, Kamatchi Jothiramalingam; Chen, Huang-Chin; Panda, Kalpataru; Sundaravel, Balakrishnan; Lee, Chi-Young; Tai, Nyan-Hwa; Lin, I-Nan

    2014-04-09

    The effects of Cu and Au ion implantation on the structural and electron field emission (EFE) properties of ultrananocrystalline diamond (UNCD) films were investigated. High electrical conductivity of 186 (Ω•cm)(-1) and enhanced EFE properties with low turn-on field of 4.5 V/μm and high EFE current density of 6.70 mA/cm(2) have been detected for Au-ion implanted UNCD (Au-UNCD) films that are superior to those of Cu-ion implanted UNCD (Cu-UNCD) ones. Transmission electron microscopic investigations revealed that Au-ion implantation induced a larger proportion of nanographitic phases at the grain boundaries for the Au-UNCD films in addition to the formation of uniformly distributed spherically shaped Au nanoparticles. In contrast, for Cu-UNCD films, plate-like Cu nanoparticles arranged in the row-like pattern were formed, and only a smaller proportion of nanographite phases along the grain boundaries was induced. From current imaging tunneling spectroscopy and local current-voltage curves of scanning tunneling spectroscopic measurements, it is observed that the electrons are dominantly emitted from the grain boundaries. Consequently, the presence of nanosized Au particles and the induction of abundant nanographitic phases in the grain boundaries of Au-UNCD films are believed to be the authentic factors, ensuing in high electrical conductivity and outstanding EFE properties of the films.

  2. Enhanced life ion source for germanium and carbon ion implantation

    SciTech Connect

    Hsieh, Tseh-Jen; Colvin, Neil; Kondratenko, Serguei

    2012-11-06

    Germanium and carbon ions represent a significant portion of total ion implantation steps in the process flow. Very often ion source materials that used to produce ions are chemically aggressive, especially at higher temperatures, and result in fast ion source performance degradation and a very limited lifetime [B.S. Freer, et. al., 2002 14th Intl. Conf. on Ion Implantation Technology Proc, IEEE Conf. Proc., p. 420 (2003)]. GeF{sub 4} and CO{sub 2} are commonly used to generate germanium and carbon beams. In the case of GeF{sub 4} controlling the tungsten deposition due to the de-composition of WF{sub 6} (halogen cycle) is critical to ion source life. With CO{sub 2}, the materials oxidation and carbon deposition must be controlled as both will affect cathode thermionic emission and anti-cathode (repeller) efficiencies due to the formation of volatile metal oxides. The improved ion source design Extended Life Source 3 (Eterna ELS3) together with its proprietary co-gas material implementation has demonstrated >300 hours of stable continuous operation when using carbon and germanium ion beams. Optimizing cogas chemistries retard the cathode erosion rate for germanium and carbon minimizes the adverse effects of oxygen when reducing gas is introduced for carbon. The proprietary combination of hardware and co-gas has improved source stability and the results of the hardware and co-gas development are discussed.

  3. Study of the effects of focused high-energy boron ion implantation in diamond

    NASA Astrophysics Data System (ADS)

    Ynsa, M. D.; Agulló-Rueda, F.; Gordillo, N.; Maira, A.; Moreno-Cerrada, D.; Ramos, M. A.

    2017-08-01

    Boron-doped diamond is a material with a great technological and industrial interest because of its exceptional chemical, physical and structural properties. At modest boron concentrations, insulating diamond becomes a p-type semiconductor and at higher concentrations a superconducting metal at low temperature. The most conventional preparation method used so far, has been the homogeneous incorporation of boron doping during the diamond synthesis carried out either with high-pressure sintering of crystals or by chemical vapour deposition (CVD) of films. With these methods, high boron concentration can be included without distorting significantly the diamond crystalline lattice. However, it is complicated to manufacture boron-doped microstructures. A promising alternative to produce such microstructures could be the implantation of focused high-energy boron ions, although boron fluences are limited by the damage produced in diamond. In this work, the effect of focused high-energy boron ion implantation in single crystals of diamond is studied under different irradiation fluences and conditions. Micro-Raman spectra of the sample were measured before and after annealing at 1000 °C as a function of irradiation fluence, for both superficial and buried boron implantation, to assess the changes in the diamond lattice by the creation of vacancies and defects and their degree of recovery after annealing.

  4. Characterization of carbon ion implantation induced graded microstructure and phase transformation in stainless steel

    SciTech Connect

    Feng, Kai; Wang, Yibo; Li, Zhuguo; Chu, Paul K.

    2015-08-15

    Austenitic stainless steel 316L is ion implanted by carbon with implantation fluences of 1.2 × 10{sup 17} ions-cm{sup −} {sup 2}, 2.4 × 10{sup 17} ions-cm{sup −} {sup 2}, and 4.8 × 10{sup 17} ions-cm{sup −} {sup 2}. The ion implantation induced graded microstructure and phase transformation in stainless steel is investigated by X-ray diffraction, X-ray photoelectron spectroscopy and high resolution transmission electron microscopy. The corrosion resistance is evaluated by potentiodynamic test. It is found that the initial phase is austenite with a small amount of ferrite. After low fluence carbon ion implantation, an amorphous layer and ferrite phase enriched region underneath are formed. Nanophase particles precipitate from the amorphous layer due to energy minimization and irradiation at larger ion implantation fluence. The morphology of the precipitated nanophase particles changes from circular to dumbbell-like with increasing implantation fluence. The corrosion resistance of stainless steel is enhanced by the formation of amorphous layer and graphitic solid state carbon after carbon ion implantation. - Highlights: • Carbon implantation leads to phase transformation from austenite to ferrite. • The passive film on SS316L becomes thinner after carbon ion implantation. • An amorphous layer is formed by carbon ion implantation. • Nanophase precipitate from amorphous layer at higher ion implantation fluence. • Corrosion resistance of SS316L is improved by carbon implantation.

  5. Hexagonal cobalt carbide formed by carbon ion implantation

    NASA Astrophysics Data System (ADS)

    Liu, B. X.; Wang, J.; Fang, Z. Z.

    1991-05-01

    Thin films of ferromagnetic metals, i.e., bcc Fe, hcp Co, and fcc Ni, were subjected to 50-keV carbon ion implantation at room temperature. At the dose of 2.5×1017 ions/cm2, the formation of hexagonal Fe3C and Ni3C phases was confirmed by transmission electron microscopy selected area electron diffraction patterns; and more interestingly a similar pattern for Co was also observed for the first time. The phase was identified as hexagonal Co3C with a=2.685 Å and c=4.335 Å based on the spacings and intensities of the diffraction rings. The carbide formation was also confirmed by Auger electron spectra. The stoichiometry of the hexagonal structure may be extended in the range of Co3-2C as estimated from the experiments performed up to the dose of 9×1017 ions/cm2.

  6. Carbon, nitrogen, and oxygen ion implantation of stainless steel

    SciTech Connect

    Rej, D.J.; Gavrilov, N.V.; Emlin, D.

    1995-12-31

    Ion implantation experiments of C, N, and O into stainless steel have been performed, with beam-line and plasma source ion implantation methods. Acceleration voltages were varied between 27 and 50 kV, with pulsed ion current densities between 1 and 10 mA/cm{sup 2}. Implanted doses ranged from 0.5 to 3 {times} 10{sup 18}cm{sup -2}, while workpiece temperatures were maintained between 25 and 800 C. Implant concentration profiles, microstructure, and surface mechanical properties of the implanted materials are reported.

  7. Direct observation and mechanism for enhanced field emission sites in platinum ion implanted/post-annealed ultrananocrystalline diamond films

    SciTech Connect

    Panda, Kalpataru E-mail: phy.kalpa@gmail.com; Inami, Eiichi; Sugimoto, Yoshiaki; Sankaran, Kamatchi J.; Tai, Nyan Hwa; Lin, I-Nan

    2014-10-20

    Enhanced electron field emission (EFE) properties for ultrananocrystalline diamond (UNCD) films upon platinum (Pt) ion implantation and subsequent post-annealing processes is reported, viz., low turn-on field of 4.17 V/μm with high EFE current density of 5.08 mA/cm{sup 2} at an applied field of 7.0 V/μm. Current imaging tunneling spectroscopy (CITS) mode in scanning tunneling spectroscopy directly revealed the increased electron emission sites density for Pt ion implanted/post-annealed UNCD films than the pristine one. The high resolution CITS mapping and local current–voltage characteristic curves demonstrated that the electrons are dominantly emitted from the diamond grain boundaries and Pt nanoparticles.

  8. Direct observation and mechanism for enhanced field emission sites in platinum ion implanted/post-annealed ultrananocrystalline diamond films

    NASA Astrophysics Data System (ADS)

    Panda, Kalpataru; Sankaran, Kamatchi J.; Inami, Eiichi; Sugimoto, Yoshiaki; Tai, Nyan Hwa; Lin, I.-Nan

    2014-10-01

    Enhanced electron field emission (EFE) properties for ultrananocrystalline diamond (UNCD) films upon platinum (Pt) ion implantation and subsequent post-annealing processes is reported, viz., low turn-on field of 4.17 V/μm with high EFE current density of 5.08 mA/cm2 at an applied field of 7.0 V/μm. Current imaging tunneling spectroscopy (CITS) mode in scanning tunneling spectroscopy directly revealed the increased electron emission sites density for Pt ion implanted/post-annealed UNCD films than the pristine one. The high resolution CITS mapping and local current-voltage characteristic curves demonstrated that the electrons are dominantly emitted from the diamond grain boundaries and Pt nanoparticles.

  9. Wafer-scale synthesis of multi-layer graphene by high-temperature carbon ion implantation

    NASA Astrophysics Data System (ADS)

    Kim, Janghyuk; Lee, Geonyeop; Kim, Jihyun

    2015-07-01

    We report on the synthesis of wafer-scale (4 in. in diameter) high-quality multi-layer graphene using high-temperature carbon ion implantation on thin Ni films on a substrate of SiO2/Si. Carbon ions were bombarded at 20 keV and a dose of 1 × 1015 cm-2 onto the surface of the Ni/SiO2/Si substrate at a temperature of 500 °C. This was followed by high-temperature activation annealing (600-900 °C) to form a sp2-bonded honeycomb structure. The effects of post-implantation activation annealing conditions were systematically investigated by micro-Raman spectroscopy and transmission electron microscopy. Carbon ion implantation at elevated temperatures allowed a lower activation annealing temperature for fabricating large-area graphene. Our results indicate that carbon-ion implantation provides a facile and direct route for integrating graphene with Si microelectronics.

  10. Improvement on electrical conductivity and electron field emission properties of Au-ion implanted ultrananocrystalline diamond films by using Au-Si eutectic substrates

    NASA Astrophysics Data System (ADS)

    Sankaran, K. J.; Sundaravel, B.; Tai, N. H.; Lin, I. N.

    2015-08-01

    In the present work, Au-Si eutectic layer was used to enhance the electrical conductivity/electron field emission (EFE) properties of Au-ion implanted ultrananocrystalline diamond (Au-UNCD) films grown on Si substrates. The electrical conductivity was improved to a value of 230 (Ω cm)-1, and the EFE properties was enhanced reporting a low turn-on field of 2.1 V/μm with high EFE current density of 5.3 mA/cm2 (at an applied field of 4.9 V/μm) for the Au-UNCD films. The formation of SiC phase circumvents the formation of amorphous carbon prior to the nucleation of diamond on Si substrates. Consequently, the electron transport efficiency of the UNCD-to-Si interface increases, thereby improving the conductivity as well as the EFE properties. Moreover, the salient feature of these processes is that the sputtering deposition of Au-coating for preparing the Au-Si interlayer, the microwave plasma enhanced chemical vapor deposition process for growing the UNCD films, and the Au-ion implantation process for inducing the nanographitic phases are standard thin film preparation techniques, which are simple, robust, and easily scalable. The availability of these highly conducting UNCD films with superior EFE characteristics may open up a pathway for the development of high-definition flat panel displays and plasma devices.

  11. Improvement on electrical conductivity and electron field emission properties of Au-ion implanted ultrananocrystalline diamond films by using Au-Si eutectic substrates

    SciTech Connect

    Sankaran, K. J.; Sundaravel, B.; Tai, N. H. E-mail: inanlin@mail.tku.edu.tw; Lin, I. N. E-mail: inanlin@mail.tku.edu.tw

    2015-08-28

    In the present work, Au-Si eutectic layer was used to enhance the electrical conductivity/electron field emission (EFE) properties of Au-ion implanted ultrananocrystalline diamond (Au-UNCD) films grown on Si substrates. The electrical conductivity was improved to a value of 230 (Ω cm){sup −1}, and the EFE properties was enhanced reporting a low turn-on field of 2.1 V/μm with high EFE current density of 5.3 mA/cm{sup 2} (at an applied field of 4.9 V/μm) for the Au-UNCD films. The formation of SiC phase circumvents the formation of amorphous carbon prior to the nucleation of diamond on Si substrates. Consequently, the electron transport efficiency of the UNCD-to-Si interface increases, thereby improving the conductivity as well as the EFE properties. Moreover, the salient feature of these processes is that the sputtering deposition of Au-coating for preparing the Au-Si interlayer, the microwave plasma enhanced chemical vapor deposition process for growing the UNCD films, and the Au-ion implantation process for inducing the nanographitic phases are standard thin film preparation techniques, which are simple, robust, and easily scalable. The availability of these highly conducting UNCD films with superior EFE characteristics may open up a pathway for the development of high-definition flat panel displays and plasma devices.

  12. Near-infrared waveguide in gallium nitride single crystal produced by carbon ion implantation

    NASA Astrophysics Data System (ADS)

    Xiang, Bingxi; Wang, Lei

    2017-05-01

    We report on the fabrication of planar waveguides in gallium nitride by 5 MeV carbon ion implantation with different fluences at room temperature. The waveguides are characterized by prism coupling, Rutherford backscattering/channeling, and high-resolution X-ray diffraction analysis. A positive change in ordinary refractive index is confirmed in the waveguide region at a near-infrared waveband. The thermal stability of the ion-implanted GaN waveguides is investigated by annealing the samples at different temperatures.

  13. Haemocompatibility of hydrogenated amorphous carbon (a-C:H) films synthesized by plasma immersion ion implantation-deposition

    NASA Astrophysics Data System (ADS)

    Yang, P.; Kwok, S. C. H.; Chu, P. K.; Leng, Y. X.; Chen, J. Y.; Wang, J.; Huang, N.

    2003-05-01

    Diamond-like-carbon has attracted much attention recently as a potential biomaterial in blood contacting biomedical devices. However, previous reports in this area have not adequately addressed the biocompatibility and acceptability of the materials in blood contacting applications. In this study, hydrogenated amorphous carbon (a-C:H) films were fabricated on silicon wafers (1 0 0) using plasma immersion ion implantation-deposition. A series of a-C:H films with different structures and chemical bonds were fabricated under different substrate voltages. The results indicate that film graphitization is promoted at higher substrate bias. The film deposited at a lower substrate bias of -75 V possesses better blood compatibility than the films at higher bias and stainless steel. Our results suggest two possible paths to improve the blood compatibility, suppression of the endogenic clotting system and reduction of platelet activation.

  14. Measurement of Adhesion Strength of DLC Film Prepared by Utilizing Plasma-Based Ion Implantation

    NASA Astrophysics Data System (ADS)

    Oka, Yoshihiro; Yatsuzuka, Mitsuyasu

    High-adhesion diamond-like carbon (DLC) film was prepared by a hybrid process of plasma-based ion implantation and deposition using superimposed RF and high-voltage pulses. The adhesion strength of DLC film on a stainless steel (SUS304) was enhanced by the carbon ion implantation to the substrate. Furthermore, ion implantation of mixed carbon and silicon led to considerable enhancement of adhesion strength above the resin glue strength. The adhesion strength of DLC film on the aluminum alloy (A-5052) was improved above the resin glue strength only by the carbon ion implantation to the substrate.

  15. Hardening of nickel alloys by ion implantation of titanium and carbon

    SciTech Connect

    Myers, S.M.; Follstaedt, D.M.; Knapp, J.A.; Christenson, T.R.

    1996-12-31

    Dual ion implantation of Ti and C was shown to produce an amorphous surface layer in annealed bulk Ni, electroformed Ni, and electroformed Ni{sub 0.75}Fe{sub 0.25}. Diamond-tip nanoindentation coupled with finite-element modeling quantified the elastic and plastic mechanical properties of the implanted region. The amorphized matrix, with a thickness of about 100 nm, has an intrinsic hardness near 16 GPa, exceeding by an order of magnitude the value for annealed bulk Ni. Implications for the control of friction and wear in microelectromechanical systems are discussed.

  16. Enhancing electrical conductivity and electron field emission properties of ultrananocrystalline diamond films by copper ion implantation and annealing

    SciTech Connect

    Sankaran, K. J.; Tai, N. H. E-mail: inanlin@mail.tku.edu.tw; Panda, K.; Sundaravel, B.; Lin, I. N. E-mail: inanlin@mail.tku.edu.tw

    2014-02-14

    Copper ion implantation and subsequent annealing at 600 °C achieved high electrical conductivity of 95.0 (Ωcm){sup −1} for ultrananocrystalline diamond (UNCD) films with carrier concentration of 2.8 × 10{sup 18} cm{sup −2} and mobility of 6.8 × 10{sup 2} cm{sup 2}/V s. Transmission electron microscopy examinations reveal that the implanted Cu ions first formed Cu nanoclusters in UNCD films, which induced the formation of nanographitic grain boundary phases during annealing process. From current imaging tunneling spectroscopy and local current-voltage curves of scanning tunneling spectroscopic measurements, it is observed that the electrons are dominantly emitted from the grain boundaries. Consequently, the nanographitic phases presence in the grain boundaries formed conduction channels for efficient electron transport, ensuing in excellent electron field emission (EFE) properties for copper ion implanted/annealed UNCD films with low turn-on field of 4.80 V/μm and high EFE current density of 3.60 mA/cm{sup 2} at an applied field of 8.0 V/μm.

  17. The microstructural evolution of ultrananocrystalline diamond films due to P ion implantation process—the annealing effect

    SciTech Connect

    Lin, Sheng-Chang; Yeh, Chien-Jui; Leou, Keh-Chyang; Kurian, Joji; Lin, I.-Nan; Dong, Chung-Li; Niu, Huan

    2014-11-14

    The microstructural evolution of UNCD films which are P-ion implanted and annealed at 600 °C (or 800 °C) is systematically investigated. The difference of interaction that the UNCD content undergoes along the trajectory of the incident P-ions is reflected in the alteration of the granular structure. In regions where the P-ions reside, the “interacting zone,” which is found at about 300 nm beneath the surface of the films, coalescence of diamond grains occurs inducing nano-graphitic clusters. The annealing at 600 °C (or 800 °C) heals the defects and, in some cases, forms interconnected graphitic filaments that result in the decrease in surface resistance. However, the annealing at 600 °C (800 °C) induces marked UNCD-to-Si layers interaction. This interaction due to the annealing processes hinders the electron transport across the interface and degrades the electron field emission properties of the UNCD films. These microstructural evolution processes very well account for the phenomenon elaborating that, in spite of enhanced conductivity of the UNCD films along the film's surface due to the P-ion implantation and annealing processes, the electron field emission properties for these UNCD films do not improve.

  18. Wafer-scale synthesis of multi-layer graphene by high-temperature carbon ion implantation

    SciTech Connect

    Kim, Janghyuk; Lee, Geonyeop; Kim, Jihyun

    2015-07-20

    We report on the synthesis of wafer-scale (4 in. in diameter) high-quality multi-layer graphene using high-temperature carbon ion implantation on thin Ni films on a substrate of SiO{sub 2}/Si. Carbon ions were bombarded at 20 keV and a dose of 1 × 10{sup 15 }cm{sup −2} onto the surface of the Ni/SiO{sub 2}/Si substrate at a temperature of 500 °C. This was followed by high-temperature activation annealing (600–900 °C) to form a sp{sup 2}-bonded honeycomb structure. The effects of post-implantation activation annealing conditions were systematically investigated by micro-Raman spectroscopy and transmission electron microscopy. Carbon ion implantation at elevated temperatures allowed a lower activation annealing temperature for fabricating large-area graphene. Our results indicate that carbon-ion implantation provides a facile and direct route for integrating graphene with Si microelectronics.

  19. Preparation of graphene on Cu foils by ion implantation with negative carbon clusters

    NASA Astrophysics Data System (ADS)

    Li, Hui; Shang, Yan-Xia; Zhang, Zao-Di; Wang, Ze-Song; Zhang, Rui; Fu, De-Jun

    2015-01-01

    We report on few-layer graphene synthesized on Cu foils by ion implantation using negative carbon cluster ions, followed by annealing at 950 °C in vacuum. Raman spectroscopy reveals IG/I2D values varying from 1.55 to 2.38 depending on energy and dose of the cluster ions, indicating formation of multilayer graphene. The measurements show that the samples with more graphene layers have fewer defects. This is interpreted by graphene growth seeded by the first layers formed via outward diffusion of C from the Cu foil, though nonlinear damage and smoothing effects also play a role. Cluster ion implantation overcomes the solubility limit of carbon in Cu, providing a technique for multilayer graphene synthesis. Project supported by the National Natural Science Foundation of China (Grant Nos. 11105100, 11205116, and 11375135) and the State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, China (Grant No. AWJ-M13-03).

  20. High density nitrogen-vacancy sensing surface created via He{sup +} ion implantation of {sup 12}C diamond

    SciTech Connect

    Kleinsasser, Ed E.; Stanfield, Matthew M.; Banks, Jannel K. Q.; Zhu, Zhouyang; Li, Wen-Di; Acosta, Victor M.; Watanabe, Hideyuki; Itoh, Kohei M.; Fu, Kai-Mei C.

    2016-05-16

    We present a promising method for creating high-density ensembles of nitrogen-vacancy centers with narrow spin-resonances for high-sensitivity magnetic imaging. Practically, narrow spin-resonance linewidths substantially reduce the optical and RF power requirements for ensemble-based sensing. The method combines isotope purified diamond growth, in situ nitrogen doping, and helium ion implantation to realize a 100 nm-thick sensing surface. The obtained 10{sup 17 }cm{sup −3} nitrogen-vacancy density is only a factor of 10 less than the highest densities reported to date, with an observed 200 kHz spin resonance linewidth over 10 times narrower.

  1. Effects of Mo ion implantation on rolling contact fatigue behavior of carbon steel

    SciTech Connect

    Yang, D.; Zhou, J.

    1996-11-01

    Rolling Contact Fatigue (RCF) is one of the most serious material surface damage problems encountered by many critical components, especially in ball-bearing applications. RCF is sensitive to the material strength, hardness, surface morphology, microstructure and stress status, which may be dramatically changed by surface modifications. In present work, the surface modification of molybdenum ion implantation into quenched carbon steel was employed, and RCF tests on the implanted specimens, as well as the unimplanted, were performed. It was found out that carbon steel specimens, with and without ion implantation, have the same fatigue damage characteristics. They both have circular and fan-like pits on the fatigue failed surfaces, with many spherical debris existing in the fan-like pits. However, molybdenum ion implantation reduced the rolling contact fatigue life of quenched carbon steel. The possible reasons are the following: the ion beam current is too large, which causes the specimen to undergo the annealing process and soften during the implantation process; the incident angles of ions are different for different spots of curve specimen surface, which causes the uneven distribution of residual stress. These will promote the crack initiation and propagation.

  2. Mossbauer effect in the ion-implanted iron-carbon alloys

    NASA Technical Reports Server (NTRS)

    Han, K. S.

    1976-01-01

    The concentration dependence of Mossbauer effect in four carbon ion-implanted iron absorbers, which contain carbon as the solute atoms, has been investigated over the range of concentration 0.05 through 1 atomic percent. The specimens were prepared by implanting carbon atoms on each reference iron foil with four different bombarding energies of 250 keV, 160 keV, 140 keV and 80 keV, respectively. Thus, the specimen contains a uniform dosage of carbon atoms which penetrated up to 3,000 A depth of the reference iron. In the measurement of Mossbauer spectra, the backscattering conversion electron counting geometry was used. Typical results of Mossbauer parameters of iron-carbon alloys show that the isomer shift, quadrupole shift, the effective hyperfine splitting of Fe-57, and the intensity ratio exhibit a large variation with the increase of carbon concentration in the environment of iron atoms.

  3. Multienergy gold ion implantation for enhancing the field electron emission characteristics of heterogranular structured diamond films grown on Au-coated Si substrates

    NASA Astrophysics Data System (ADS)

    Sankaran, K. J.; Manoharan, D.; Sundaravel, B.; Lin, I. N.

    2016-09-01

    Multienergy Au-ion implantation enhanced the electrical conductivity of heterogranular structured diamond films grown on Au-coated Si substrates to a high level of 5076.0 (Ω cm)-1 and improved the field electron emission (FEE) characteristics of the films to low turn-on field of 1.6 V/μm, high current density of 5.4 mA/cm2 (@ 2.65 V/μm), and high lifetime stability of 1825 min. The catalytic induction of nanographitic phases in the films due to Au-ion implantation and the formation of diamond-to-Si eutectic interface layer due to Au-coating on Si together encouraged the efficient conducting channels for electron transport, thereby improved the FEE characteristics of the films.

  4. Irradiation effect of carbon negative-ion implantation on polytetrafluoroethylene for controlling cell-adhesion property

    NASA Astrophysics Data System (ADS)

    Sommani, Piyanuch; Tsuji, Hiroshi; Kojima, Hiroyuki; Sato, Hiroko; Gotoh, Yasuhito; Ishikawa, Junzo; Takaoka, Gikan H.

    2010-10-01

    We have investigated the irradiation effect of negative-ion implantation on the changes of physical surface property of polytetrafluoroethylene (PTFE) for controlling the adhesion property of stem cells. Carbon negative ions were implanted into PTFE sheets at fluences of 1 × 10 14-1 × 10 16 ions/cm 2 and energies of 5-20 keV. Wettability and atomic bonding state including the ion-induced functional groups on the modified surfaces were investigated by water contact angle measurement and XPS analysis, respectively. An initial value of water contact angles on PTFE decreased from 104° to 88° with an increase in ion influence to 1 × 10 16 ions/cm 2, corresponding to the peak shifting of XPS C1s spectra from 292.5 eV to 285 eV with long tail on the left peak-side. The change of peak position was due to decrease of C-F 2 bonds and increase of C-C bonds with the formation of hydrophilic oxygen functional groups of OH and C dbnd O bonds after the ion implantation. After culturing rat mesenchymal stem cells (MSC) for 4 days, the cell-adhesion properties on the C --patterned PTFE were observed by fluorescent microscopy with staining the cell nuclei and their actin filament (F-actin). The clear adhesion patterning of MSCs on the PTFE was obtained at energies of 5-10 keV and a fluence of 1 × 10 15 ions/cm 2. While the sparse patterns and the uncontrollable patterns were found at a low fluence of 3 × 10 14 ions/cm 2 and a high fluence of 3 × 10 15 ions/cm 2, respectively. As a result, we could improve the surface wettability of PTFE to control the cell-adhesion property by carbon negative-ion implantation.

  5. Estimation of Protein Absorption on Polymer Material by Carbon-Negative Ion Implantation

    NASA Astrophysics Data System (ADS)

    Yamada, Tetsuya; Tsuji, Hiroshi; Hattori, Mitsutaka; Sommani, Piyanuch; Sato, Hiroko; Gotoh, Yasuhito; Ishikawa, Junzo

    Selective cell attachment on carbon-negative-ion implanted region of polystyrene was already reported by the authors. However, the selectivity and adhesion strength in the cell pattering were partially insufficient. The adhesive proteins called extracellular matrix (ECM), in general, intervene between cell and substrate surface in the cell attachment on the solid surface. Therefore, we considered to obtain clearer selective cell attachment with tighter binding strength on the implanted region of polystyrene when these adhesive proteins precedently adsorbed on the implanted region of polystyrene. In this paper, we have investigated adsorption properties of three kinds of adhesive proteins (gelatin, fibronectin, laminin) and cell attachment properties on precedent protein adsorbed surface of polystyrene modified by carbon negative-ion implantation. Carbon negative ions were implanted into polystyrene at energy of 10 keV with dose in a range of 1×1014~1×1016 ions/cm2. After implantation, the samples were dipped in the protein solutions for 2 hours. Then, the protein adsorption ratio between implanted and unimplanted regions was evaluated by detecting amount of nitrogen atoms on the surface by X-ray photoelectron spectroscopy (XPS). As a result, the protein-precedently-absorbed sample implanted at dose more than 3×1015 ions/cm2 showed the large gelatin adsorption ratio of more than 2, where the much densely populated cell-attachment was observed more than that on the implanted region of polystyrene without precedent adsorption of protein after cell culture.

  6. Carbon plasma immersion ion implantation of nickel-titanium shape memory alloys.

    PubMed

    Poon, R W Y; Yeung, K W K; Liu, X Y; Chu, P K; Chung, C Y; Lu, W W; Cheung, K M C; Chan, D

    2005-05-01

    Nickel-titanium (NiTi) shape memory alloys possess super-elasticity in addition to the well-known shape memory effect and are potentially suitable for orthopedic implants. However, a critical concern is the release of harmful Ni ions from the implants into the living tissues. We propose to enhance the corrosion resistance and other surface and biological properties of NiTi using carbon plasma immersion ion implantation and deposition (PIII&D). Our corrosion and simulated body fluid tests indicate that either an ion-mixed amorphous carbon coating fabricated by PIII&D or direct carbon PIII can drastically improve the corrosion resistance and block the out-diffusion of Ni from the materials. Our tribological tests show that the treated surfaces are mechanically more superior and cytotoxicity tests reveal that both sets of plasma-treated samples favor adhesion and proliferation of osteoblasts.

  7. Optical properties of K9 glass waveguides fabricated by using carbon-ion implantation

    NASA Astrophysics Data System (ADS)

    Liu, Chun-Xiao; Wei, Wei; Fu, Li-Li; Zhu, Xu-Feng; Guo, Hai-Tao; Li, Wei-Nan; Lin, She-Bao

    2016-07-01

    K9 glass is a material with promising properties that make it attractive for optical devices. Ion implantation is a powerful technique to form waveguides with controllable depth and refractive index profile. In this work, optical planar waveguide structures were fabricated in K9 glasses by using 6.0-MeV C3+-ion implantation with a fluence of 1.0 × 1015 ions/cm2. The effective refractive indices of the guided modes were measured by using a prism-coupling system. The refractive index change in the ion-irradiated region was simulated by using the intensity calculation method. The modal intensity profile of the waveguide was calculated and measured by using the finite difference beam propagation method and the end-face coupling technique, respectively. The transmission spectra before and after the implantation showed that the main absorption band was not influenced by the low fluence dopants. The optical properties of the carbon-implanted K9 glass waveguides show promise for use as integrated photonic devices.

  8. Lubrication by Diamond and Diamondlike Carbon Coatings

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1997-01-01

    Regardless of environment (ultrahigh vacuum, humid air, dry nitrogen, or water), ion-beam-deposited diamondlike carbon (DLC) and nitrogen-ion-implanted, chemical-vapor-deposited (CVD) diamond films had low steady-state coefficients of friction (less than 0.1) and low wear rates (less than or equal to 10(exp -6)cu mm/N(dot)m). These films can be used as effective wear-resistant, self-lubricating coatings regardless of environment. On the other hand, as-deposited, fine-grain CVD diamond films; polished, coarse-grain CVD diamond films; and polished and then fluorinated, coarse-grain CVD diamond films can be used as effective wear-resistant, self-lubricating coatings in humid air, in dry nitrogen, and in water, but they had a high coefficient of friction and a high wear rate in ultrahigh vacuum. The polished, coarse-grain CVD diamond film revealed an extremely low wear rate, far less than 10(exp 10) cu mm/N(dot)m, in water.

  9. Development of silicon carbide substrates by carbonization and ion implantation of single-crystalline substrates

    NASA Astrophysics Data System (ADS)

    Morales Sanchez, Francisco Miguel

    Mechanisms of formation involved in both thin films and crystalline precipitates of silicon carbide (SiC) are studied in this Ph. D. thesis. SiC is fabricated starting from single-crystalline silicon (Si) substrates by carbonization or by ion implantation. The characterization of these structures allows to gather data and better physical and chemical understanding of these systems. The main objectives are (i) the fabrication and characterization of SiC and other interesting crystalline phases obtained from Si wafers and (ii) to demonstrate that these products are a viable way for using them as templates, compliant, seed or buffer layers in SiC or III-N overgrowth by epitaxial growth techniques. These approaches let the consecution of a crystalline quality enough to the development of devices. Indeed, their use allow a significant reduction of the high defect density present in III-N or SiC alloys compared to their quality when directly grown on Si. Therefore, long life are foreseen for electronic devices that could use these substrates. This is the limit needed for the beginning of their industrial production and commercialization. Samples studied in this work are framed inside three groups: (1) Silicon Carbide and other phases (Silicon Nitride (Si3N4) and carbon nitride (C3N4)) synthesized by Silicon ion implantation, (2) Silicon Carbide synthesized by Si carbonisation and (3) Silicon Carbide and Gallium Nitride heteroepitaxial growth on carbonized Si. All these structures are fabricated by techniques derived from classic (i) Ion Beam Induced Crystallization (IBIC), (ii) Chemical Vapour Deposition (CVD) or (iii) Molecular Beam Epitaxy (MBE). Structural characterizations are carried out mainly by (i) Scanning Electron Microscopy (SEM), (ii) Transmission Electron Microscopy (TEM), (iii) Fourier Transform Infra Red Spectrometry (FTIR) and other techniques.

  10. Effective implantation of light emitting centers by plasma immersion ion implantation and focused ion beam methods into nanosized diamond

    NASA Astrophysics Data System (ADS)

    Himics, L.; Tóth, S.; Veres, M.; Tóth, A.; Koós, M.

    2015-02-01

    Two different implantation techniques, plasma immersion ion implantation and focused ion beam, were used to introduce nitrogen ions into detonation nanodiamond crystals with the aim to create nitrogen-vacancy related optically active centers of light emission in near UV region. Previously samples were subjected to a defect creation process by helium irradiation in both cases. Heat treatments at different temperatures (750 °C, 450 °C) were applied in order to initiate the formation of nitrogen-vacancy related complex centers and to decrease the sp2 carbon content formed under different treatments. As a result, a relatively narrow and intensive emission band with fine structure at 2.98, 2.83 and 2.71 eV photon energies was observed in the light emission spectrum. It was assigned to the N3 complex defect center. The formation of this defect center can be expected by taking into account the relatively high dose of implanted nitrogen ions and the overlapped depth distribution of vacancies and nitrogen. The calculated depth profiles distribution for both implanted nitrogen and helium by SRIM simulation support this expectation.

  11. Nucleation and growth of diamond on carbon-implanted single crystal copper surfaces

    SciTech Connect

    Ong, T.P.; Xiong, F.; Chang, R.P.H. ); White, C.W. )

    1992-09-01

    The nucleation and growth of diamond crystals on single crystal copper surfaces has been studied. Microwave plasma enhanced chemical vapor deposition (MPECVD) was used for diamond nucleation and growth. Prior to diamond nucleation, the single crystal copper surface is modified by carbon ion implantation at an elevated temperature ({similar to}820 {degree}C). This procedure leads to the formation of a graphite film on the copper surface, resulting in an enhancement of diamond crystallite nucleation. A simple lattice model has been constructed to describe the mechanism of diamond nucleation on graphite as {l angle}111{r angle}{sub diamond} parallel to {l angle}0001{r angle}{sub graphite} and {l angle}110{r angle}{sub diamond} parallel to {l angle}1120{r angle}{sub graphite}. This leads to a good understanding of diamond growth on carbon-implanted copper surfaces.

  12. Annealing effects on the migration of ion-implanted cadmium in glassy carbon

    NASA Astrophysics Data System (ADS)

    Hlatshwayo, T. T.; Sebitla, L. D.; Njoroge, E. G.; Mlambo, M.; Malherbe, J. B.

    2017-03-01

    The migration behaviour of cadmium (Cd) implanted into glassy carbon and the effects of annealing on radiation damage introduced by ion implantation were investigated. The glassy carbon substrates were implanted with Cd at a dose of 2 × 1016 ions/cm2 and energy of 360 keV. The implantation was performed at room temperature (RT), 430 °C and 600 °C. The RT implanted samples were isochronally annealed in vacuum at 350, 500 and 600 °C for 1 h and isothermally annealed at 350 °C up to 4 h. The as-implanted and annealed samples were characterized by Raman spectroscopy and Rutherford backscattering spectrometry (RBS). Raman results revealed that implantation at room temperature amorphized the glassy carbon structure while high temperature implantations resulted in slightly less radiation damage. Isochronal annealing of the RT implanted samples resulted in some recrystallization as a function of increasing temperature. The original glassy carbon structure was not achieved at the highest annealing temperature of 600 °C. Diffusion of Cd in glassy carbon was already taking place during implantation at 430 °C. This diffusion of Cd was accompanied by significant loss from the surface during implantation at 600 °C. Isochronal annealing of the room temperature implanted samples at 350 °C for 1 h caused Cd to diffuse towards the bulk while isothermal annealing at 500 and 600 °C resulted in the migration of implanted Cd toward the surface accompanied by a loss of Cd from the surface. Isothermal annealing at 350 °C for 1 h caused Cd to diffuse towards the bulk while for annealing time >1 h Cd diffused towards the surface. These results were interpreted in terms of trapping and de-trapping of implanted Cd by radiation damage.

  13. The Effect of Carbon Dioxide and Nitrogen ion implantation of AISI 52100 Steel

    NASA Astrophysics Data System (ADS)

    Sari, Amir H.; Ghoranneviss, M.; Mardanian, M.; Hantehzadeh, M. R.; Hora, H.

    2003-06-01

    Ion implantation has been used to modify the mechanical properties of a wide range of metals and alloys using plasma techniques for ion sources and plasma surface treatment [1]. In this study AISI 52100 steel disks, containing 1.5 wt% Cr as the major alloying element, were implanted with nitrogen and carbon dioxide ions at the energy of 90 KeV, with dose in the range 1 × 1018 to 1 × 1019 N2+ ions cm-2, and 3 × 1018 to 1 × 1019 for co2+ ions cm-2. Ion beam current densities and sample temperature, during implantation were 3-6 μA/cm2 and 170°C, respectively. Experiments show, hardness of sample, increases 30-49% using N2+ ions, and 5-17% using co2+ ions. In order to explain the results, formation of beta-CrN and carbide pahses have been carried out using X-ray diffraction technique.

  14. Search for Superconductivity in Carbon Nanotubes Doped by Boron Ion Implantation

    NASA Astrophysics Data System (ADS)

    Cornell, Nicholas; Kutsenov, Alex; Howard, Austin; Mayo, Nathaniel; Galstayan, Eduard; Chu, Wei Kan; Freyhardt, Herbert; Zakhidov, Anvar; Wang, Xuemei; University of Texas at Dallas Team; University of Houston Team

    2011-03-01

    The boron doping of single wall carbon nanotubes(CNT) by laser ablation synthesis has been reported to create superconducting B-CNTs with Tc's ranging from 12-19 Kelvin, depending on CNT inter-tube connection strength. We attempt to create boron doped multiwall CNT by ion implantation doping. Ion doping of boron(B) was performed at 60keV and 20keV, and low temperature transport combined with SQUID and ESR/LFMA was used in searching for SC. We have found that R(T) strongly depends on the metallic contact geometry. With thin film contacts on CNT sheets the R(T) shows no SC signatures, while when an Ag or Au paste penetrates the highly porous network of B doped multiwall CNT then R(T) drops and curvature changes are observed resembling SC transitions with Tc depending on B concentration and metallic electrode distances. We discuss these results in terms of possible SC in hybride ``metal-CNT'' system in which metal was predicted to supress phase fluctuation in one dimensional CNT network.

  15. Improvement in wear performance of surgical Ti-6Al-4V alloy by ion implantation of nitrogen or carbon

    SciTech Connect

    Williams, J.M.; Buchanan, R.A.; Rigney, E.D. Jr.

    1985-06-01

    The effects of ion implantations of either nitrogen or carbon on the corrosive-wear performance of surgical Ti-6A1-4V alloy were investigated. In vitro tests made use of an apparatus which could produce certain chemical and mechanical aspects of a sliding interface such as that which occurs between alloy and polyethylene components of an artificial hip (or knee) joint. Cylindrical samples of the Ti alloy were rotated between loaded, conforming pads made of ultrahigh molecular weight polyethylene (UHMWPE) while these test components were immersed either in a saline solution or a saline solution with bovine serum added. During the tests open-circuit corrosion currents for the alloy were measured by the Tafel extrapolation technique. Profilometry studies were done before and after the tests. Alloy samples implanted with either nitrogen or carbon remained as-new for all test conditions. Unimplanted control samples were severely scored. Corrosion currents as measured under the mechanical action were reduced by a factor of approximately one hundred by the ion implantation treatments. It is concluded that nitrogen or carbon ion implantation produces a marked improvement in the corrosive wear performance of the alloy in these tests. It is inferred that abrasive wear is the dominant mechanism of material removal. In addition, apparently owing to reduction of wear debris in the sliding interface, ion treatment of the alloy greatly improves wear performance of the mating UHMWPE component. 11 refs., 11 figs., 2 tabs.

  16. Nitrogen-vacancy centers created by N+ ion implantation through screening SiO2 layers on diamond

    NASA Astrophysics Data System (ADS)

    Ito, Kazuki; Saito, Hiroshi; Sasaki, Kento; Watanabe, Hideyuki; Teraji, Tokuyuki; Itoh, Kohei M.; Abe, Eisuke

    2017-05-01

    We report on an ion implantation technique utilizing a screening mask made of SiO2 to control both the depth profile and the dose. By appropriately selecting the thickness of the screening layer, this method fully suppresses the ion channeling, brings the location of the highest nitrogen-vacancy (NV) density to the surface, and effectively reduces the dose by more than three orders of magnitude. With a standard ion implantation system operating at the energy of 10 keV and the dose of 1011 cm2 and without an additional etching process, we create single NV centers close to the surface with coherence times of a few tens of μs.

  17. Effects of carbon dioxide plasma immersion ion implantation on the electrochemical properties of AZ31 magnesium alloy in physiological environment

    NASA Astrophysics Data System (ADS)

    Xu, Ruizhen; Yang, Xiongbo; Zhang, Xuming; Wang, Mei; Li, Penghui; Zhao, Ying; Wu, Guosong; Chu, Paul K.

    2013-12-01

    Plasma immersion ion implantation (PIII) is conducted to improve the intrinsically poor corrosion properties of biodegradable AZ31 magnesium alloy in the physiological environment. Carbon dioxide is implanted into the samples and X-ray photoelectron spectroscopy and scanning electron microscopy are used to characterize the materials. The corrosion properties are systematically studied by potentiodynamic polarization tests in two simulated physiological environments, namely simulated body fluids and cell culture medium. The plasma-implanted materials exhibit a lower initial corrosion rate. Being a gaseous ion PIII technique, conformal ion implantation into an object with a complex shape such as an orthopedic implant can be easily accomplished and CO2 PIII is a potential method to improve the biological properties of magnesium and its alloys in clinical applications.

  18. Temperature dependent properties of silicon containing diamondlike carbon films prepared by plasma source ion implantation

    NASA Astrophysics Data System (ADS)

    Hatada, R.; Flege, S.; Baba, K.; Ensinger, W.; Kleebe, H.-J.; Sethmann, I.; Lauterbach, S.

    2010-04-01

    Silicon containing diamondlike carbon (Si-DLC) films were prepared on silicon wafer substrates by a plasma source ion implantation method with negative pulses superposed on a negative dc voltage. A mixture of acetylene and tetramethylsilane gas was introduced into the discharge chamber as working gases for plasma formation. Ions produced in the plasma are accelerated toward a substrate holder because of the negative voltage applied directly to it. After deposition, the films were annealed for 0.5 h in ambient air at temperatures up to 923 K in order to evaluate the thermal stability of the Si-DLC films. The films were analyzed by x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy, and Raman spectroscopy. The surface morphology of the films and the film thickness were observed by atomic force microscopy and scanning electron microscopy. The mechanical and tribological properties were investigated by an indentation method and a ball-on-disk test. The results show the silicon containing DLC films were amorphous and the surface roughness of the Si containing DLC films was very smooth and no special structure was observed. Integrated intensity ratios ID/IG of Raman spectroscopy of the Si containing DLC films decreased with Si content. The Raman spectra showed that the structure of the Si-free DLC film changed to a graphitelike structure with increasing annealing temperature, whereas that of the 24 at. % Si containing DLC films did not change at the maximum temperature used in this study. A very low friction coefficient was obtained for the 13 at. % Si containing DLC film. The surface roughness and the hardness of the films changed with increasing annealing temperature. The formation of Si oxide in a near surface layer was confirmed by XPS and it prevents further oxidation of the inside of the film. Heat resistivity of DLC films can be improved by Si addition into the DLC films.

  19. Progress towards a 20 kV, 2 kA plasma source ion implantation modulator for automotive production of diamond film on aluminum

    SciTech Connect

    Reass, W.A.; Munson, C.A.; Malaczynski, G.; Elmoursi, A.

    1996-11-01

    This paper provides the process requirements and the electrical design topology being developed to facilitate large scale production of amorphous diamond films on aluminum. The patented recipe, that includes other surface modification processes, requires various operational voltages, duty cycles, and current load regimes to ensure a high quality film. It is desirable to utilize a common modulator design for this relatively low voltage recipe. Processing may include target part cleaning, ion implantation, plasma deposition, and vacuum chamber cleaning. Modulator performance will have a direct impact on plant size and system economics. Unfortunately, process requirements are in a regime that is not easily achievable by solid state or very efficiently by vacuum tube devices. To accommodate the various process requirements, the authors are developing a modulator based on series connected hot decks utilizing high current, high voltage IGBT devices.

  20. Optical properties of planar waveguides on ZnWO₄ formed by carbon and helium ion implantation and effects of annealing.

    PubMed

    Zhao, Jin-Hua; Liu, Tao; Guo, Sha-Sha; Guan, Jing; Wang, Xue-Lin

    2010-08-30

    We report on the optical properties of ZnWO(4) planar waveguides created by ion implantation, and the effect annealing has on these structures. Planar optical waveguides in ZnWO(4) crystals are fabricated by 5.0 MeV carbon ion implantation with a fluence of 1 × 10(15) ions/cm(2) or 500 keV helium ion implantation with the a fluence of 1 × 10(16) ions/cm(2). The thermal stability was investigated by 60 minute annealing cycles at different temperatures ranging from 260°C to 550°C in air. The guided modes were measured by a model 2010 prism coupler at wavelengths of 633 nm and 1539 nm. The reflectivity calculation method (RCM) was applied to simulate the refractive index profile in these waveguides. The near-field light intensity profiles were measured using the end-face coupling method. The absorption spectra show that the implantation processes have almost no influence on the visible band absorption.

  1. Improvement of the corrosion and tribological properties of CSS-42L aerospace bearing steel using carbon ion implantation

    NASA Astrophysics Data System (ADS)

    Wang, Fangfang; Zhou, Chungen; Zheng, Lijing; Zhang, Hu

    2017-01-01

    The aerospace bearings steel CSS-42L was ion implanted by carbon with implantation fluxes of 5 × 1016 ions cm-2. The composition, microstructure and hardness of the carbon implanted samples were characterized using X-ray photoelectron spectroscopy, Auger electron spectroscopy, X-ray diffraction, and nanoindentation tests. The corrosion and tribological properties were also evaluated in the present work. The results shown that carbon implantation produced an amorphous layer and graphitic bounds formed at the near surface of CSS-42L steel. In the electrochemical test, the carbon implanted samples suggested lower current densities and corrosion rates. Carbon ion implanted samples shown a relative Cr-enrichment at the surface as compared with nonimplanted samples. The improved corrosion resistance is believed to be related to the formed amorphous layer, the enhancement of Cr diffusion in the carbon implantation layer which contributed the formation of passive film on the surface, the decrease of free electrons which caused by the increase of carbon fraction. The external hard layer had positive effect on the wear resistance, reducing strongly the friction coefficient about 30% and the abrasive-adhesive mechanism present in the unimplanted samples was not modified by the implantation process.

  2. Influence of 400 keV carbon ion implantation on structural, optical and electrical properties of PMMA

    NASA Astrophysics Data System (ADS)

    Arif, Shafaq; Rafique, M. Shahid; Saleemi, Farhat; Sagheer, Riffat; Naab, Fabian; Toader, Ovidiu; Mahmood, Arshad; Rashid, Rashad; Mahmood, Mazhar

    2015-09-01

    Ion implantation is a useful technique to modify surface properties of polymers without altering their bulk properties. The objective of this work is to explore the 400 keV C+ ion implantation effects on PMMA at different fluences ranging from 5 × 1013 to 5 × 1015 ions/cm2. The surface topographical examination of irradiated samples has been performed using Atomic Force Microscope (AFM). The structural and chemical modifications in implanted PMMA are examined by Raman and Fourier Infrared Spectroscopy (FTIR) respectively. The effects of carbon ion implantation on optical properties of PMMA are investigated by UV-Visible spectroscopy. The modifications in electrical conductivity have been measured using a four point probe technique. AFM images reveal a decrease in surface roughness of PMMA with an increase in ion fluence from 5 × 1014 to 5 × 1015 ions/cm2. The existence of amorphization and sp2-carbon clusterization has been confirmed by Raman and FTIR spectroscopic analysis. The UV-Visible data shows a prominent red shift in absorption edge as a function of ion fluence. This shift displays a continuous reduction in optical band gap (from 3.13 to 0.66 eV) due to formation of carbon clusters. Moreover, size of carbon clusters and photoconductivity are found to increase with increasing ion fluence. The ion-induced carbonaceous clusters are believed to be responsible for an increase in electrical conductivity of PMMA from (2.14 ± 0.06) × 10-10 (Ω-cm)-1 (pristine) to (0.32 ± 0.01) × 10-5 (Ω-cm)-1 (irradiated sample).

  3. Room-temperature continuous wave laser oscillations in Nd:YAG ceramic waveguides produced by carbon ion implantation

    NASA Astrophysics Data System (ADS)

    Tan, Y.; Zhang, C.; Chen, F.; Liu, F.-Q.; Jaque, D.; Lu, Q.-M.

    2011-06-01

    We report on the generation of continuous wave lasers at a wavelength of ˜1064 nm in a Nd:YAG ceramic waveguide at room temperature. The waveguide was fabricated by using 6 MeV carbon ion implantation at a fluence of 3×1014 ions/cm2. Laser operation has been realized with a slope efficiency as high as ˜11%. The pump threshold of an 808-nm laser beam for the waveguide laser oscillation is 19.5 mW.

  4. Fabrication and characterization of a co-planar detector in diamond for low energy single ion implantation

    SciTech Connect

    Abraham, John Bishoy Sam; Pacheco, Jose L.; Aguirre, Brandon Adrian; Vizkelethy, Gyorgy; Bielejec, Edward S.

    2016-08-09

    We demonstrate low energy single ion detection using a co-planar detector fabricated on a diamond substrate and characterized by ion beam induced charge collection. Histograms are taken with low fluence ion pulses illustrating quantized ion detection down to a single ion with a signal-to-noise ratio of approximately 10. We anticipate that this detection technique can serve as a basis to optimize the yield of single color centers in diamond. In conclusion, the ability to count ions into a diamond substrate is expected to reduce the uncertainty in the yield of color center formation by removing Poisson statistics from the implantation process.

  5. Fabrication and characterization of a co-planar detector in diamond for low energy single ion implantation

    NASA Astrophysics Data System (ADS)

    Abraham, J. B. S.; Aguirre, B. A.; Pacheco, J. L.; Vizkelethy, G.; Bielejec, E.

    2016-08-01

    We demonstrate low energy single ion detection using a co-planar detector fabricated on a diamond substrate and characterized by ion beam induced charge collection. Histograms are taken with low fluence ion pulses illustrating quantized ion detection down to a single ion with a signal-to-noise ratio of approximately 10. We anticipate that this detection technique can serve as a basis to optimize the yield of single color centers in diamond. The ability to count ions into a diamond substrate is expected to reduce the uncertainty in the yield of color center formation by removing Poisson statistics from the implantation process.

  6. Fabrication and characterization of a co-planar detector in diamond for low energy single ion implantation

    SciTech Connect

    Abraham, John Bishoy Sam; Pacheco, Jose L.; Aguirre, Brandon Adrian; Vizkelethy, Gyorgy; Bielejec, Edward S.

    2016-08-09

    We demonstrate low energy single ion detection using a co-planar detector fabricated on a diamond substrate and characterized by ion beam induced charge collection. Histograms are taken with low fluence ion pulses illustrating quantized ion detection down to a single ion with a signal-to-noise ratio of approximately 10. We anticipate that this detection technique can serve as a basis to optimize the yield of single color centers in diamond. In conclusion, the ability to count ions into a diamond substrate is expected to reduce the uncertainty in the yield of color center formation by removing Poisson statistics from the implantation process.

  7. Fabrication and characterization of a co-planar detector in diamond for low energy single ion implantation

    DOE PAGES

    Abraham, John Bishoy Sam; Pacheco, Jose L.; Aguirre, Brandon Adrian; ...

    2016-08-09

    We demonstrate low energy single ion detection using a co-planar detector fabricated on a diamond substrate and characterized by ion beam induced charge collection. Histograms are taken with low fluence ion pulses illustrating quantized ion detection down to a single ion with a signal-to-noise ratio of approximately 10. We anticipate that this detection technique can serve as a basis to optimize the yield of single color centers in diamond. In conclusion, the ability to count ions into a diamond substrate is expected to reduce the uncertainty in the yield of color center formation by removing Poisson statistics from the implantationmore » process.« less

  8. Friction and Wear of Ion-Beam-Deposited Diamondlike Carbon on Chemical-Vapor-Deposited, Fine-Grain Diamond

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Wu, Richard L. C.; Lanter, William C.

    1996-01-01

    Friction and wear behavior of ion-beam-deposited diamondlike carbon (DLC) films coated on chemical-vapor-deposited (CVD), fine-grain diamond coatings were examined in ultrahigh vacuum, dry nitrogen, and humid air environments. The DLC films were produced by the direct impact of an ion beam (composed of a 3:17 mixture of Ar and CH4) at ion energies of 1500 and 700 eV and an RF power of 99 W. Sliding friction experiments were conducted with hemispherical CVD diamond pins sliding on four different carbon-base coating systems: DLC films on CVD diamond; DLC films on silicon; as-deposited, fine-grain CVD diamond; and carbon-ion-implanted, fine-grain CVD diamond on silicon. Results indicate that in ultrahigh vacuum the ion-beam-deposited DLC films on fine-grain CVD diamond (similar to the ion-implanted CVD diamond) greatly decrease both the friction and wear of fine-grain CVD diamond films and provide solid lubrication. In dry nitrogen and in humid air, ion-beam-deposited DLC films on fine-grain CVD diamond films also had a low steady-state coefficient of friction and a low wear rate. These tribological performance benefits, coupled with a wider range of coating thicknesses, led to longer endurance life and improved wear resistance for the DLC deposited on fine-grain CVD diamond in comparison to the ion-implanted diamond films. Thus, DLC deposited on fine-grain CVD diamond films can be an effective wear-resistant, lubricating coating regardless of environment.

  9. Optical planar waveguide in sodium-doped calcium barium niobate crystals by carbon ion implantation

    NASA Astrophysics Data System (ADS)

    Zhao, Jin-Hua; Qin, Xi-Feng; Wang, Feng-Xiang; Fu, Gang; Wang, Hui-Lin; Wang, Xue-Lin

    2013-07-01

    There is great interest in niobate crystals which belong to the tetragonal tungsten bronze (TTB) families owing to their intriguing properties. As one representative of such crystals, CBN (calcium barium niobate) has attracted rapidly growing attention. Because it has a higher Curie temperature than SBN (strontium barium niobate), possesses outstanding ferroelectric and it possesses optical properties. In addition, doped with sodium, CBN will show a higher Curie temperature than pure CBN. We report on the fabrication and characterization of optical planar waveguide in x-cut sodium-doped calcium barium niobate crystal by using C ion implantation. The guided-mode properties at the wavelength of 633 and 1539 nm are investigated through prism-coupling measurements, respectively. By applying direct end-face coupling arrangement, the near-field optical intensity distribution of waveguide modes is measured at 633 nm. For comparison, the modal profile of the same guided mode is also numerically calculated by the finite difference beam-propagation method via computer software BeamPROP. The transmission spectra of the waveguide before and after ion implantation treatments were investigated also. Our experiment results reveal that the waveguide could propagate light with transverse magnetic polarized direction only and it is assumed that the polarization selectivity of CBN crystal may responsible for this phenomenon.

  10. STEM observation of nano-interface between substrate and DLC film prepared by plasma-based ion implantation and deposition

    NASA Astrophysics Data System (ADS)

    Oka, Y.; Nishijima, M.; Hiraga, K.; Yatsuzuka, M.

    2007-04-01

    This paper discusses the nano-interface between an aluminum alloy (A5052) substrate and diamond-like carbon (DLC) film prepared by a hybrid process of plasma-based ion implantation and deposition (PBIID) using superimposed RF and negative high-voltage pulses. Adhesion strength of DLC films were enhanced by carbon ion implantation to the substrate. The nano-interface between DLC film and substrate was observed by high resolution transmission electron microscopy (HRTEM) and scanning transmission electron microscopy (STEM) and analyzed by energy dispersive X-ray spectroscopy (EDS). It was found that an unclear crystal structure damaged by ion implantation was formed in the carbon ion-implanted layer. Besides, the amorphous mixing layer of oxide and DLC was produced on the substrate surface. The formation of the mixing layer, the layer of unclear crystal structure and the destruction of oxide led to the enhancement in adhesion strength of DLC film.

  11. Graphene synthesis by ion implantation

    PubMed Central

    Garaj, Slaven; Hubbard, William; Golovchenko, J. A.

    2010-01-01

    We demonstrate an ion implantation method for large-scale synthesis of high quality graphene films with controllable thickness. Thermally annealing polycrystalline nickel substrates that have been ion implanted with carbon atoms results in the surface growth of graphene films whose average thickness is controlled by implantation dose. The graphene film quality, as probed with Raman and electrical measurements, is comparable to previously reported synthesis methods. The implantation synthesis method can be generalized to a variety of metallic substrates and growth temperatures, since it does not require a decomposition of chemical precursors or a solvation of carbon into the substrate. PMID:21124725

  12. High-dose boron and silver ion implantation into PMMA probed by slow positrons: Effects of carbonization and formation of metal nanoparticles

    NASA Astrophysics Data System (ADS)

    Kavetskyy, T.; Iida, K.; Nagashima, Y.; Kuczumow, A.; Šauša, O.; Nuzhdin, V.; Valeev, V.; Stepanov, A. L.

    2017-01-01

    The Doppler broadening slow positron beam spectroscopy (SPBS) data for the previously observed effect of carbonization in high-dose (>1016 ion/cm2) 40 keV boron-ion-implanted polymethylmethacrylate (B:PMMA) and another one obtained for the effect of formation of metal nanoparticles in high-dose 30 keV silver-ion-implanted polymer (Ag:PMMA) are compared. Following to the Doppler broadening SPBS results, a difference in the high-dose ion-irradiation-induced processes in B:PMMA and Ag:PMMA is detected.

  13. Effect of carbon ion implantation on the tribology of metal-on-metal bearings for artificial joints

    PubMed Central

    Koseki, Hironobu; Tomita, Masato; Yonekura, Akihiko; Higuchi, Takashi; Sunagawa, Sinya; Baba, Koumei; Osaki, Makoto

    2017-01-01

    Metal-on-metal (MoM) bearings have become popular due to a major advantage over metal-on-polymer bearings for total hip arthroplasty in that the larger femoral head and hydrodynamic lubrication of the former reduce the rate of wear. However, concerns remain regarding adverse reactions to metal debris including metallosis caused by metal wear generated at the taper-head interface and another modular junction. Our group has hypothesized that carbon ion implantation (CII) may improve metal wear properties. The purpose of this study was to investigate the wear properties and friction coefficients of CII surfaces with an aim to ultimately apply these surfaces to MoM bearings in artificial joints. CII was applied to cobalt-chromium-molybdenum (Co-Cr-Mo) alloy substrates by plasma source ion implantation. The substrates were characterized using scanning electron microscopy and a 3D measuring laser microscope. Sliding contact tests were performed with a simple geometry pin-on-plate wear tester at a load of 2.5 N, a calculated contact pressure of 38.5 MPa (max: 57.8 MPa), a reciprocating velocity of 30 mm/s, a stroke length of 60 mm, and a reciprocating cycle count of 172,800 cycles. The surfaces of the CII substrates were generally featureless with a smooth surface topography at the same level as untreated Co-Cr-Mo alloy. Compared to the untreated Co-Cr-Mo alloy, the CII-treated bearings had lower friction coefficients, higher resistance to catastrophic damage, and prevented the adhesion of wear debris. The results of this study suggest that the CII surface stabilizes the wear status due to the low friction coefficient and low infiltration of partner materials, and these properties also prevent the adhesion of wear debris and inhibit excessive wear. Carbon is considered to be biologically inert; therefore, CII is anticipated to be applicable to the bearing surfaces of MoM prostheses. PMID:28615939

  14. Effect of carbon ion implantation on the tribology of metal-on-metal bearings for artificial joints.

    PubMed

    Koseki, Hironobu; Tomita, Masato; Yonekura, Akihiko; Higuchi, Takashi; Sunagawa, Sinya; Baba, Koumei; Osaki, Makoto

    2017-01-01

    Metal-on-metal (MoM) bearings have become popular due to a major advantage over metal-on-polymer bearings for total hip arthroplasty in that the larger femoral head and hydrodynamic lubrication of the former reduce the rate of wear. However, concerns remain regarding adverse reactions to metal debris including metallosis caused by metal wear generated at the taper-head interface and another modular junction. Our group has hypothesized that carbon ion implantation (CII) may improve metal wear properties. The purpose of this study was to investigate the wear properties and friction coefficients of CII surfaces with an aim to ultimately apply these surfaces to MoM bearings in artificial joints. CII was applied to cobalt-chromium-molybdenum (Co-Cr-Mo) alloy substrates by plasma source ion implantation. The substrates were characterized using scanning electron microscopy and a 3D measuring laser microscope. Sliding contact tests were performed with a simple geometry pin-on-plate wear tester at a load of 2.5 N, a calculated contact pressure of 38.5 MPa (max: 57.8 MPa), a reciprocating velocity of 30 mm/s, a stroke length of 60 mm, and a reciprocating cycle count of 172,800 cycles. The surfaces of the CII substrates were generally featureless with a smooth surface topography at the same level as untreated Co-Cr-Mo alloy. Compared to the untreated Co-Cr-Mo alloy, the CII-treated bearings had lower friction coefficients, higher resistance to catastrophic damage, and prevented the adhesion of wear debris. The results of this study suggest that the CII surface stabilizes the wear status due to the low friction coefficient and low infiltration of partner materials, and these properties also prevent the adhesion of wear debris and inhibit excessive wear. Carbon is considered to be biologically inert; therefore, CII is anticipated to be applicable to the bearing surfaces of MoM prostheses.

  15. The effect of carbon and nitrogen implantation on the abrasion resistance of type IIa (110) diamond

    NASA Astrophysics Data System (ADS)

    Anderson, Gregory C.; Prawer, Steven; Johnston, Peter; McCulloch, Dougal

    1993-06-01

    The possibility of enhancing the wear characteristics of diamond has generated considerable interest. In the present study type IIa diamond has been implanted with 100 keV carbon and nitrogen ions at temperatures of 150, 470 and 920 K. These temperatures correspond to different defect mobility regimes, whilst nitrogen and carbon were chosen in an attempt to examine possible chemical effects of the ion species on the abrasion resistance of type IIa diamond. The results of abrasion testing using low load multiple pass scratch testing with a Rockwell diamond indenter are presented. These indicate that there is an increase in wear rate in both the soft <100> and hard < overline110> directions following ion implantation. For a given dose the wear rate increases as the implant temperature is reduced. Optical transmission spectra taken in the wavelength region 200 to 750 nm show a corresponding trend in that the implantation induced absorption increases with decreasing implant temperature.

  16. Trapping and diffusion kinetic of hydrogen in carbon-cluster ion-implantation projected range in Czochralski silicon wafers

    NASA Astrophysics Data System (ADS)

    Okuyama, Ryosuke; Masada, Ayumi; Kadono, Takeshi; Hirose, Ryo; Koga, Yoshihiro; Okuda, Hidehiko; Kurita, Kazunari

    2017-02-01

    We investigated the diffusion behavior of hydrogen in a silicon wafer made by a carbon-cluster ion-implantation technique after heat treatment and silicon epitaxial growth. A hydrogen peak was observed after high-temperature heat treatment (>1000 °C) and silicon epitaxial growth by secondary ion mass spectrometry analysis. We also confirmed that the hydrogen peak concentration decreased after epitaxial growth upon additional heat treatment. Such a hydrogen diffusion behavior has not been reported. Thus, we derived the activation energy from the projected range of a carbon cluster, assuming only a dissociation reaction, and obtained an activation energy of 0.76 ± 0.04 eV. This value is extremely close to that for the diffusion of hydrogen molecules located at the tetrahedral interstitial site and hydrogen molecules dissociated from multivacancies. Therefore, we assume that the hydrogen in the carbon-cluster projected range diffuses in the molecular state, and hydrogen remaining in the projected range forms complexes of carbon, oxygen, and vacancies.

  17. Study of the effects of E × B fields as mechanism to carbon-nitrogen plasma immersion ion implantation on stainless steel samples

    NASA Astrophysics Data System (ADS)

    Pillaca, E. J. D. M.; Ueda, M.; Oliveira, R. M.; Pichon, L.

    2014-08-01

    Effects of E × B fields as mechanism to carbon-nitrogen plasma immersion ion implantation (PIII) have been investigated. This magnetic configuration when used in PIII allows obtaining high nitrogen plasma density close to the ion implantation region. Consequently, high ions dose on the target is possible to be achieved compared with standard PIII. In this scenario, nitrogen and carbon ions were implanted simultaneously on stainless steel, as measured by GDOES and detected by X-ray diffraction. Carbon-tape disposed on the sample-holder was sputtered by intense bombardment of nitrogen ions, being the source of carbon atoms in this experiment. The implantation of both N and C caused changes on sample morphology and improvement of the tribological properties of the stainless steel.

  18. Effects of incident energy and angle on carbon cluster ions implantation on silicon substrate: a molecular dynamics study

    NASA Astrophysics Data System (ADS)

    Wei, Ye; Sang, Shengbo; Zhou, Bing; Deng, Xiao; Chai, Jing; Ji, Jianlong; Ge, Yang; Huo, Yuanliang; Zhang, Wendong

    2017-09-01

    Carbon cluster ion implantation is an important technique in fabricating functional devices at micro/nanoscale. In this work, a numerical model is constructed for implantation and implemented with a cutting-edge molecular dynamics method. A series of simulations with varying incident energies and incident angles is performed for incidence on silicon substrate and correlated effects are compared in detail. Meanwhile, the behavior of the cluster during implantation is also examined under elevated temperatures. By mapping the nanoscopic morphology with variable parameters, numerical formalism is proposed to explain the different impacts on phrase transition and surface pattern formation. Particularly, implantation efficiency (IE) is computed and further used to evaluate the performance of the overall process. The calculated results could be properly adopted as the theoretical basis for designing nano-structures and adjusting devices’ properties. Project supported by the National Natural Science Foundation of China (Nos. 51622507, 61471255, 61474079, 61403273, 51502193, 51205273), the Natural Science Foundation of Shanxi (Nos. 201601D021057, 201603D421035), the Youth Foundation Project of Shanxi Province (Nos. 2015021097), the Doctoral Fund of MOE of China (No. 20131402110013), the National High Technology Research and Development Program of China (No. 2015AA042601), and the Specialized Project in Public Welfare from The Ministry of Water Resources of China (Nos. 1261530110110).

  19. Effects of carbon and nitrogen plasma immersion ion implantation on in vitro and in vivo biocompatibility of titanium alloy.

    PubMed

    Zhao, Ying; Wong, Sze Man; Wong, Hoi Man; Wu, Shuilin; Hu, Tao; Yeung, Kelvin W K; Chu, Paul K

    2013-02-01

    Growth of bony tissues on titanium biomedical implants can be time-consuming, thereby prolonging recovery and hospitalization after surgery and a method to improve and expedite tissue-implant integration and healing is thus of scientific and clinical interests. In this work, nitrogen and carbon plasma immersion ion implantation (N-PIII and C-PIII) is conducted to modify Ti-6Al-4V to produce a graded surface layer composed of TiN and TiC, respectively. Both PIII processes do not significantly alter the surface hydrophilicity but increase the surface roughness and corrosion resistance. In vitro studies disclose improved cell adhesion and proliferation of MC3T3-E1 preosteoblasts and L929 fibroblasts after PIII. Micro-CT evaluation conducted 1 to 12 weeks after surgery reveals larger average bone volumes and less bone resorption on the N-PIII and C-PIII titanium alloy pins than the unimplanted one at every time point. The enhancements observed from both the in vitro and in vivo studies can be attributed to the good cytocompatibility, roughness, and corrosion resistance of the TiN and TiC structures which stimulate the response of preosteoblasts and fibroblasts and induce early bone formation. Comparing the two PIII processes, N-PIII is more effective and our results suggest a simple and practical means to improve the surface biocompatibility of medical-grade titanium alloy implants.

  20. In-situ observation of sputtered particles for carbon implanted tungsten during energetic isotope ion implantation

    SciTech Connect

    Oya, Y.; Sato, M.; Uchimura, H.; Okuno, K.; Ashikawa, N.; Sagara, A.; Yoshida, N.; Hatano, Y.

    2015-03-15

    Tungsten is a candidate for plasma facing materials in future fusion reactors. During DT plasma operations, carbon as an impurity will bombard tungsten, leading to the formation of tungsten-carbon (WC) layer and affecting tritium recycling behavior. The effect of carbon implantation for the dynamic recycling of deuterium, which demonstrates tritium recycling, including retention and sputtering, has been investigated using in-situ sputtered particle measurements. The C{sup +} implanted W, WC and HOPG were prepared and dynamic sputtered particles were measured during H{sub 2}{sup +} irradiation. It has been found that the major hydrocarbon species for C{sup +} implanted tungsten is CH{sub 3}, while for WC and HOPG (Highly Oriented Pyrolytic Graphite) it is CH{sub 4}. The chemical state of hydrocarbon is controlled by the H concentration in a W-C mixed layer. The amount of C-H bond and the retention of H trapped by carbon atom should control the chemical form of hydrocarbon sputtered by H{sub 2}{sup +} irradiation and the desorption of CH{sub 3} and CH{sub 2} are due to chemical sputtering, although that for CH is physical sputtering. The activation energy for CH{sub 3} desorption has been estimated to be 0.4 eV, corresponding to the trapping process of hydrogen by carbon through the diffusion in W. It is concluded that the chemical states of hydrocarbon sputtered by H{sub 2}{sup +} irradiation for W is determined by the amount of C-H bond on the W surface. (authors)

  1. Graphene on silicon dioxide via carbon ion implantation in copper with PMMA-free transfer

    NASA Astrophysics Data System (ADS)

    Lehnert, Jan; Spemann, Daniel; Hamza Hatahet, M.; Mändl, Stephan; Mensing, Michael; Finzel, Annemarie; Varga, Aron; Rauschenbach, Bernd

    2017-06-01

    In this work, a synthesis method for the growth of low-defect large-area graphene using carbon ion beam implantation into metallic Cu foils is presented. The Cu foils (1 cm2 in size) were pre-annealed in a vacuum at 950 °C for 2 h, implanted with 35 keV carbon ions at room temperature, and subsequently annealed at 850 °C for 2 h to form graphene layers with the layer number controlled by the implantation fluence. The graphene was then transferred to SiO2/Si substrates by a PMMA-free wet chemical etching process. The obtained regions of monolayer graphene are of ˜900 μm size. Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and optical microscopy performed at room temperature demonstrated a good quality and homogeneity of the graphene layers, especially for monolayer graphene.

  2. A preparation approach of exploring cluster ion implantation: from ultra-thin carbon film to graphene

    PubMed Central

    2014-01-01

    Based on the extensive application of 2 × 1.7MV Tandetron accelerator, a low-energy cluster chamber has been built to explore for synthesizing graphene. Raman spectrum and atomic force microscopy (AFM) show that an amorphous carbon film in nanometer was deposited on the silicon by C4 cluster implantation. And we replaced the substrate with Ni/SiO2/Si and measured the thickness of Ni film by Rutherford backscattering spectrometry (RBS). Combined with suitable anneal conditions, these samples implanted by various small carbon clusters were made to grow graphene. Results from Raman spectrum reveal that few-layer graphene were obtained and discuss whether IG/I2D can contribute to explain the relationship between the number of graphene layers and cluster implantation dosage. PMID:24910570

  3. Transport Anomalies and Possible High Tc Superconductivity in interconnected multiwall carbon nanotube sheets doped by ion implantation

    NASA Astrophysics Data System (ADS)

    Zakhidov, Anvar; Howard, Austin; Cornell, Nicholas; Goskun, Ulas; Salamon, Myron; Baughman, Ray; Bykova, Julia; Mayo, Nathanael; Wang, Xuemei; Galstyan, Eduard; Freyhardt, Herbert; Kan Chu, Wei

    2012-02-01

    Ion implantation offers an alternative doping method. In searching for superconductivity,we describe here the ion-implantation doping of MWCNT interconnected networks by boron and other dopants (phosphorous, sulfur, arsenic) and report transport anomalies in oriented networks of ion implanted MWCNT sheets as compared to cross coated (non-oriented multilayer MWCNT sheets). The strong drop of resistance R(T) with temperature decrease starting at Tc1= 50-60 K and even at higher T is reminiscent of inhomogeneous superconducting islands appearing in the non-SC matrix. An unusual anomaly of the 4-terminal resistance is observed in many samples, R(T) becoming negative at lower T< Tc2 ˜ 10-20 K, This negative resistance is found to be associated with unusual I-V curves with s-shape at low T < Tc2 and R(T) shows nonlinear dependence on excitation current and other features that are studied carefully in MWCNTs with different lengths and densities. This negative-resistance behavior gives a hint for the possible incorporation of superconducting areas and can be explained in terms of an imbalanced resistance bridge.

  4. Plasma, photon, and beam synthesis of diamond films and multilayered structures

    SciTech Connect

    Chang, R.P.H.

    1992-09-01

    In the area of nucleation, it was discovered that C{sub 70} thin films are perfect substitutes for diamond seeds in the growth of diamond films. This research, along with a careful study of diamond growth on carbon ion implanted single crystal copper, have clearly demonstrated that structured carbon is the best precursor for nucleation and growth of diamond films on non-diamond surfaces. In addition, by using fluorine chemistry during diamond growth, it has been shown that diamond films can grow on carbide substrates without the pretreatment of diamond seeding. The growth rates are higher and the film adhesion is much improved.

  5. Biofunctionalization of silicone rubber with microgroove-patterned surface and carbon-ion implantation to enhance biocompatibility and reduce capsule formation

    PubMed Central

    Lei, Ze-yuan; Liu, Ting; Li, Wei-juan; Shi, Xiao-hua; Fan, Dong-li

    2016-01-01

    Purpose Silicone rubber implants have been widely used to repair soft tissue defects and deformities. However, poor biocompatibility can elicit capsule formation, usually resulting in prosthesis contracture and displacement in long-term usage. To overcome this problem, this study investigated the properties of silicone rubber materials with or without a microgroove-patterned surface and with or without carbon (C)-ion implantation. Materials and methods Atomic force microscopy, X-ray photoelectron spectroscopy, and a water contact angle test were used to characterize surface morphology and physicochemical properties. Cytocompatibility was investigated by a cell adhesion experiment, immunofluorescence staining, a Cell Counting Kit-8 assay, and scanning electron microscopy in vitro. Histocompatibility was evaluated by studying the inflammatory response and fiber capsule formation that developed after subcutaneous implantation in rats for 7 days, 15 days, and 30 days in vivo. Results Parallel microgrooves were found on the surfaces of patterned silicone rubber (P-SR) and patterned C-ion-implanted silicone rubber (PC-SR). Irregular larger peaks and deeper valleys were present on the surface of silicone rubber implanted with C ions (C-SR). The silicone rubber surfaces with microgroove patterns had stable physical and chemical properties and exhibited moderate hydrophobicity. PC-SR exhibited moderately increased dermal fibroblast cell adhesion and growth, and its surface microstructure promoted orderly cell growth. Histocompatibility experiments on animals showed that both the anti-inflammatory and antifibrosis properties of PC-SR were slightly better than those of the other materials, and there was also a lower capsular contracture rate and less collagen deposition around implants made from PC-SR. Conclusion Although the surface chemical properties, dermal fibroblast cell growth, and cell adhesion were not changed by microgroove pattern modification, a more orderly cell

  6. Biofunctionalization of silicone rubber with microgroove-patterned surface and carbon-ion implantation to enhance biocompatibility and reduce capsule formation.

    PubMed

    Lei, Ze-Yuan; Liu, Ting; Li, Wei-Juan; Shi, Xiao-Hua; Fan, Dong-Li

    Silicone rubber implants have been widely used to repair soft tissue defects and deformities. However, poor biocompatibility can elicit capsule formation, usually resulting in prosthesis contracture and displacement in long-term usage. To overcome this problem, this study investigated the properties of silicone rubber materials with or without a microgroove-patterned surface and with or without carbon (C)-ion implantation. Atomic force microscopy, X-ray photoelectron spectroscopy, and a water contact angle test were used to characterize surface morphology and physicochemical properties. Cytocompatibility was investigated by a cell adhesion experiment, immunofluorescence staining, a Cell Counting Kit-8 assay, and scanning electron microscopy in vitro. Histocompatibility was evaluated by studying the inflammatory response and fiber capsule formation that developed after subcutaneous implantation in rats for 7 days, 15 days, and 30 days in vivo. Parallel microgrooves were found on the surfaces of patterned silicone rubber (P-SR) and patterned C-ion-implanted silicone rubber (PC-SR). Irregular larger peaks and deeper valleys were present on the surface of silicone rubber implanted with C ions (C-SR). The silicone rubber surfaces with microgroove patterns had stable physical and chemical properties and exhibited moderate hydrophobicity. PC-SR exhibited moderately increased dermal fibroblast cell adhesion and growth, and its surface microstructure promoted orderly cell growth. Histocompatibility experiments on animals showed that both the anti-inflammatory and antifibrosis properties of PC-SR were slightly better than those of the other materials, and there was also a lower capsular contracture rate and less collagen deposition around implants made from PC-SR. Although the surface chemical properties, dermal fibroblast cell growth, and cell adhesion were not changed by microgroove pattern modification, a more orderly cell arrangement was obtained, leading to enhanced

  7. An insight of p-type to n-type conductivity conversion in oxygen ion-implanted ultrananocrystalline diamond films by impedance spectroscopy

    NASA Astrophysics Data System (ADS)

    Xu, Hui; Ye, Haitao; Coathup, David; Mitrovic, Ivona Z.; Weerakkody, Ayendra D.; Hu, Xiaojun

    2017-01-01

    The impedance spectroscopy measurements were used to investigate the separated contributions of diamond grains and grain boundaries (GBs), giving an insight into p-type to n-type conductivity conversion in O+-implanted ultrananocrystalline diamond (UNCD) films. It is found that both diamond grains and GBs promote the conductivity in O+-implanted UNCD films, in which GBs make at least half contribution. The p-type conductivity in O+-implanted samples is a result of H-terminated diamond grains, while n-type conductive samples are closely correlated with O-terminated O+-implanted diamond grains and GBs in the films. The results also suggest that low resistance of GBs is preferable to obtain high mobility n-type conductive UNCD films.

  8. Carbon nanotube growth from catalytic nano-clusters formed by hot-ion-implantation into the SiO2/Si interface

    NASA Astrophysics Data System (ADS)

    Hoshino, Yasushi; Arima, Hiroki; Yokoyama, Ai; Saito, Yasunao; Nakata, Jyoji

    2012-07-01

    We have studied growth of chirality-controlled carbon nanotubes (CNTs) from hot-implantation-formed catalytic nano-clusters in a thermally grown SiO2/Si substrate. This procedure has the advantage of high controllability of the diameter and the number of clusters by optimizing the conditions of the ion implantation. In the present study, Co+ ions with ion dose of 8 × 1016 cm-2 are implanted in the vicinity of the SiO2/Si interface at 300 °C temperature. The implanted Co atoms located in the SiO2 layer has an amorphous-like structure with a cluster diameter of several nm. In contrast, implanted Co atoms in the Si substrate are found to take a cobalt silicide structure, confirmed by the high-resolution image of transmission electron microscope. CNTs are grown by microwave-plasma-enhanced chemical vapor deposition. We have confirmed a large amount of vertically-aligned multi-walled CNTs from the Co nano-clusters formed by the hot-ion-implantation near the SiO2/Si interface.

  9. Diamond/diamond-like carbon coated nanotube structures for efficient electron field emission

    NASA Technical Reports Server (NTRS)

    Dimitrijevic, Steven (Inventor); Withers, James C. (Inventor); Loutfy, Raouf O. (Inventor)

    2005-01-01

    The present invention is directed to a nanotube coated with diamond or diamond-like carbon, a field emitter cathode comprising same, and a field emitter comprising the cathode. It is also directed to a method of preventing the evaporation of carbon from a field emitter comprising a cathode comprised of nanotubes by coating the nanotube with diamond or diamond-like carbon. In another aspect, the present invention is directed to a method of preventing the evaporation of carbon from an electron field emitter comprising a cathode comprised of nanotubes, which method comprises coating the nanotubes with diamond or diamond-like carbon.

  10. Plasma, photon, and beam synthesis of diamond films and multilayered structures. Progress report, July 1, 1990--September 1992

    SciTech Connect

    Chang, R.P.H.

    1992-09-01

    In the area of nucleation, it was discovered that C{sub 70} thin films are perfect substitutes for diamond seeds in the growth of diamond films. This research, along with a careful study of diamond growth on carbon ion implanted single crystal copper, have clearly demonstrated that structured carbon is the best precursor for nucleation and growth of diamond films on non-diamond surfaces. In addition, by using fluorine chemistry during diamond growth, it has been shown that diamond films can grow on carbide substrates without the pretreatment of diamond seeding. The growth rates are higher and the film adhesion is much improved.

  11. Single Ion Implantation and Deterministic Doping

    SciTech Connect

    Schenkel, Thomas

    2010-06-11

    The presence of single atoms, e.g. dopant atoms, in sub-100 nm scale electronic devices can affect the device characteristics, such as the threshold voltage of transistors, or the sub-threshold currents. Fluctuations of the number of dopant atoms thus poses a complication for transistor scaling. In a complementary view, new opportunities emerge when novel functionality can be implemented in devices deterministically doped with single atoms. The grand price of the latter might be a large scale quantum computer, where quantum bits (qubits) are encoded e.g. in the spin states of electrons and nuclei of single dopant atoms in silicon, or in color centers in diamond. Both the possible detrimental effects of dopant fluctuations and single atom device ideas motivate the development of reliable single atom doping techniques which are the subject of this chapter. Single atom doping can be approached with top down and bottom up techniques. Top down refers to the placement of dopant atoms into a more or less structured matrix environment, like a transistor in silicon. Bottom up refers to approaches to introduce single dopant atoms during the growth of the host matrix e.g. by directed self-assembly and scanning probe assisted lithography. Bottom up approaches are discussed in Chapter XYZ. Since the late 1960's, ion implantation has been a widely used technique to introduce dopant atoms into silicon and other materials in order to modify their electronic properties. It works particularly well in silicon since the damage to the crystal lattice that is induced by ion implantation can be repaired by thermal annealing. In addition, the introduced dopant atoms can be incorporated with high efficiency into lattice position in the silicon host crystal which makes them electrically active. This is not the case for e.g. diamond, which makes ion implantation doping to engineer the electrical properties of diamond, especially for n-type doping much harder then for silicon. Ion

  12. Regrowth of radiation-damaged layers in natural diamond

    NASA Astrophysics Data System (ADS)

    Liu, B.; Sandhu, G. S.; Parikh, N. R.; Swanson, M. L.; Chu, W.-K.

    1990-01-01

    The regrowth of radiation-damaged layers created by carbon ion implantation in natural diamond was investigated by the Rutherford backscattering/channeling technique and by optical absorption. We present the first results of rapid thermal annealing of the implanted samples directly from the 77 K implantation temperature to 1100° C as well as data for isochronal annealing. We found that isochronal annealing up to 900° C was more effective than rapid thermal annealing for amorphized samples. The critical dose for amorphization of diamond was between 1.65 × 10 15 and 3 × 10 15 cm -2 for 200 keV carbon ion implantation at 77 K.

  13. Broad beam ion implanter

    DOEpatents

    Leung, K.N.

    1996-10-08

    An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes. 6 figs.

  14. Broad beam ion implanter

    DOEpatents

    Leung, Ka-Ngo

    1996-01-01

    An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes.

  15. Carbon stardust: From soot to diamonds

    NASA Astrophysics Data System (ADS)

    Tielens, Alexander G. G. M.

    1990-04-01

    The formation of carbon dust in the outflow from stars and the subsequent evolution of this so called stardust in the interstellar medium is reviewed. The chemical and physical processes that play a role in carbon stardust formation are very similar to those occurring in sooting flames. Based upon extensive laboratory studies of the latter, the structure and physical and chemical properties of carbon soot are reviewed and possible chemical pathways towards carbon stardust are discussed. Grain-grain collisions behind strong interstellar shocks provide the high pressures required to transform graphite and amorphous carbon grains into diamond. This process is examined and the properties of shock-synthesized diamonds are reviewed. Finally, the interrelationship between carbon stardust and carbonaceous meteorites is briefly discussed.

  16. Carbon stardust: From soot to diamonds

    NASA Technical Reports Server (NTRS)

    Tielens, Alexander G. G. M.

    1990-01-01

    The formation of carbon dust in the outflow from stars and the subsequent evolution of this so called stardust in the interstellar medium is reviewed. The chemical and physical processes that play a role in carbon stardust formation are very similar to those occurring in sooting flames. Based upon extensive laboratory studies of the latter, the structure and physical and chemical properties of carbon soot are reviewed and possible chemical pathways towards carbon stardust are discussed. Grain-grain collisions behind strong interstellar shocks provide the high pressures required to transform graphite and amorphous carbon grains into diamond. This process is examined and the properties of shock-synthesized diamonds are reviewed. Finally, the interrelationship between carbon stardust and carbonaceous meteorites is briefly discussed.

  17. Elimination of carbon vacancies in 4H-SiC epi-layers by near-surface ion implantation: Influence of the ion species

    SciTech Connect

    Ayedh, H. M.; Svensson, B. G.

    2015-11-07

    The carbon vacancy (V{sub C}) is a prevailing point defect in high-purity 4H-SiC epitaxial layers, and it plays a decisive role in controlling the charge carrier lifetime. One concept of reducing the V{sub C}-concentration is based on carbon self-ion implantation in a near surface layer followed by thermal annealing. This leads to injection of carbon interstitials (C{sub i}'s) and annihilation of V{sub C}'s in the epi-layer “bulk”. Here, we show that the excess of C atoms introduced by the self-ion implantation plays a negligible role in the V{sub C} annihilation. Actually, employing normalized implantation conditions with respect to displaced C atoms, other heavier ions like Al and Si are found to be more efficient in annihilating V{sub C}'s. Concentrations of V{sub C} below ∼2 × 10{sup 11} cm{sup −3} can be reached already after annealing at 1400 °C, as monitored by deep-level transient spectroscopy. This corresponds to a reduction in the V{sub C}-concentration by about a factor of 40 relative to the as-grown state of the epi-layers studied. The negligible role of the implanted species itself can be understood from simulation results showing that the concentration of displaced C atoms exceeds the concentration of implanted species by two to three orders of magnitude. The higher efficiency for Al and Si ions is attributed to the generation of collision cascades with a sufficiently high energy density to promote C{sub i}-clustering and reduce dynamic defect annealing. These C{sub i}-related clusters will subsequently dissolve during the post-implant annealing giving rise to enhanced C{sub i} injection. However, at annealing temperatures above 1500 °C, thermodynamic equilibrium conditions start to apply for the V{sub C}-concentration, which limit the net effect of the C{sub i} injection, and a competition between the two processes occurs.

  18. Nanocrystalline hexagonal diamond formed from glassy carbon

    NASA Astrophysics Data System (ADS)

    Shiell, Thomas. B.; McCulloch, Dougal G.; Bradby, Jodie E.; Haberl, Bianca; Boehler, Reinhard; McKenzie, David. R.

    2016-11-01

    Carbon exhibits a large number of allotropes and its phase behaviour is still subject to significant uncertainty and intensive research. The hexagonal form of diamond, also known as lonsdaleite, was discovered in the Canyon Diablo meteorite where its formation was attributed to the extreme conditions experienced during the impact. However, it has recently been claimed that lonsdaleite does not exist as a well-defined material but is instead defective cubic diamond formed under high pressure and high temperature conditions. Here we report the synthesis of almost pure lonsdaleite in a diamond anvil cell at 100 GPa and 400 °C. The nanocrystalline material was recovered at ambient and analysed using diffraction and high resolution electron microscopy. We propose that the transformation is the result of intense radial plastic flow under compression in the diamond anvil cell, which lowers the energy barrier by “locking in” favourable stackings of graphene sheets. This strain induced transformation of the graphitic planes of the precursor to hexagonal diamond is supported by first principles calculations of transformation pathways and explains why the new phase is found in an annular region. Our findings establish that high purity lonsdaleite is readily formed under strain and hence does not require meteoritic impacts.

  19. Nanocrystalline hexagonal diamond formed from glassy carbon.

    PubMed

    Shiell, Thomas B; McCulloch, Dougal G; Bradby, Jodie E; Haberl, Bianca; Boehler, Reinhard; McKenzie, David R

    2016-11-29

    Carbon exhibits a large number of allotropes and its phase behaviour is still subject to significant uncertainty and intensive research. The hexagonal form of diamond, also known as lonsdaleite, was discovered in the Canyon Diablo meteorite where its formation was attributed to the extreme conditions experienced during the impact. However, it has recently been claimed that lonsdaleite does not exist as a well-defined material but is instead defective cubic diamond formed under high pressure and high temperature conditions. Here we report the synthesis of almost pure lonsdaleite in a diamond anvil cell at 100 GPa and 400 °C. The nanocrystalline material was recovered at ambient and analysed using diffraction and high resolution electron microscopy. We propose that the transformation is the result of intense radial plastic flow under compression in the diamond anvil cell, which lowers the energy barrier by "locking in" favourable stackings of graphene sheets. This strain induced transformation of the graphitic planes of the precursor to hexagonal diamond is supported by first principles calculations of transformation pathways and explains why the new phase is found in an annular region. Our findings establish that high purity lonsdaleite is readily formed under strain and hence does not require meteoritic impacts.

  20. Nanocrystalline hexagonal diamond formed from glassy carbon

    SciTech Connect

    Shiell, Thomas. B.; McCulloch, Dougal G.; Bradby, Jodie E.; Haberl, Bianca; Boehler, Reinhard; McKenzie, David. R.

    2016-11-29

    Carbon exhibits a large number of allotropes and its phase behaviour is still subject to signifcant uncertainty and intensive research. The hexagonal form of diamond, also known as lonsdaleite, was discovered in the Canyon Diablo meteorite where its formation was attributed to the extreme conditions experienced during the impact. However, it has recently been claimed that lonsdaleite does not exist as a well-defned material but is instead defective cubic diamond formed under high pressure and high temperature conditions. Here we report the synthesis of almost pure lonsdaleite in a diamond anvil cell at 100GPa and 400 C. The nanocrystalline material was recovered at ambient and analysed using difraction and high resolution electron microscopy. We propose that the transformation is the result of intense radial plastic fow under compression in the diamond anvil cell, which lowers the energy barrier by locking in favourable stackings of graphene sheets. This strain induced transformation of the graphitic planes of the precursor to hexagonal diamond is supported by frst principles calculations of transformation pathways and explains why the new phase is found in an annular region. Furthermore, our findings establish that high purity lonsdaleite is readily formed under strain and hence does not require meteoritic impacts.

  1. Nanocrystalline hexagonal diamond formed from glassy carbon

    PubMed Central

    Shiell, Thomas. B.; McCulloch, Dougal G.; Bradby, Jodie E.; Haberl, Bianca; Boehler, Reinhard; McKenzie, David. R.

    2016-01-01

    Carbon exhibits a large number of allotropes and its phase behaviour is still subject to significant uncertainty and intensive research. The hexagonal form of diamond, also known as lonsdaleite, was discovered in the Canyon Diablo meteorite where its formation was attributed to the extreme conditions experienced during the impact. However, it has recently been claimed that lonsdaleite does not exist as a well-defined material but is instead defective cubic diamond formed under high pressure and high temperature conditions. Here we report the synthesis of almost pure lonsdaleite in a diamond anvil cell at 100 GPa and 400 °C. The nanocrystalline material was recovered at ambient and analysed using diffraction and high resolution electron microscopy. We propose that the transformation is the result of intense radial plastic flow under compression in the diamond anvil cell, which lowers the energy barrier by “locking in” favourable stackings of graphene sheets. This strain induced transformation of the graphitic planes of the precursor to hexagonal diamond is supported by first principles calculations of transformation pathways and explains why the new phase is found in an annular region. Our findings establish that high purity lonsdaleite is readily formed under strain and hence does not require meteoritic impacts. PMID:27897174

  2. Nanocrystalline hexagonal diamond formed from glassy carbon

    DOE PAGES

    Shiell, Thomas. B.; McCulloch, Dougal G.; Bradby, Jodie E.; ...

    2016-11-29

    Carbon exhibits a large number of allotropes and its phase behaviour is still subject to signifcant uncertainty and intensive research. The hexagonal form of diamond, also known as lonsdaleite, was discovered in the Canyon Diablo meteorite where its formation was attributed to the extreme conditions experienced during the impact. However, it has recently been claimed that lonsdaleite does not exist as a well-defned material but is instead defective cubic diamond formed under high pressure and high temperature conditions. Here we report the synthesis of almost pure lonsdaleite in a diamond anvil cell at 100GPa and 400 C. The nanocrystalline materialmore » was recovered at ambient and analysed using difraction and high resolution electron microscopy. We propose that the transformation is the result of intense radial plastic fow under compression in the diamond anvil cell, which lowers the energy barrier by locking in favourable stackings of graphene sheets. This strain induced transformation of the graphitic planes of the precursor to hexagonal diamond is supported by frst principles calculations of transformation pathways and explains why the new phase is found in an annular region. Furthermore, our findings establish that high purity lonsdaleite is readily formed under strain and hence does not require meteoritic impacts.« less

  3. Corrosion behavior of titanium alloy Beta-21S coated with diamond like carbon in Hank's solution

    NASA Astrophysics Data System (ADS)

    Mohan, L.; Anandan, C.; Grips, V. K. William

    2012-06-01

    Diamond like carbon (DLC) coatings posses high hardness and low friction coefficient and also biocompatible, hence, they are of interest for enhancing the wear and corrosion resistance of bio-implant materials. Beta stabilized titanium alloys are attractive for biomedical applications because of their high specific strength and low modulus. In this work Beta-21S alloy (Ti-15Mo-3Nb-3Al-0.2Si) was implanted with carbon ions by plasma immersion ion implantation using methane and hydrogen gas mixture followed by DLC deposition by plasma enhanced chemical vapour deposition (PECVD). The implanted layers enabled deposition of adherent diamond-like carbon coatings on the titanium alloy which was otherwise not possible. The corrosion behavior of the treated and untreated samples was investigated through electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization studies in simulated body fluid (Hank's solution). XPS, micro Raman and EDAX investigation of the samples showed the formation of a thin oxide layer on the treated samples after corrosion experiments. Corrosion resistance of the DLC coated sample is comparable with that of the untreated samples. Electrochemical impedance data of the substrate and implanted samples were fitted with two time constant equivalent circuits and that of DLC coated samples with two-layer model.

  4. Semiconductor Ion Implanters

    SciTech Connect

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion. Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  5. Semiconductor Ion Implanters

    NASA Astrophysics Data System (ADS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at 7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at 6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing `only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around 2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  6. Note: Sample holder with open area for increased deposition rate in plasma immersion ion implantation and deposition

    NASA Astrophysics Data System (ADS)

    Flege, S.; Hatada, R.; Derepa, A.; Dietz, C.; Ensinger, W.; Baba, K.

    2017-09-01

    A sample holder with a large open area offers several benefits when used in the process of plasma immersion ion implantation and deposition in which the plasma is generated by a high voltage applied to the sample holder: The ignition voltage of the plasma is lower, and the deposition rate can be several times higher than in the case of a normal plate-like holder. There is a more pronounced edge effect regarding the film thickness. Other film properties are also affected; for diamond-like carbon films, the film structure exhibits more disorder. The hardness of the samples is similar, with the surfaces of the samples being very smooth.

  7. Mutation breeding by ion implantation

    NASA Astrophysics Data System (ADS)

    Yu, Zengliang; Deng, Jianguo; He, Jianjun; Huo, Yuping; Wu, Yuejin; Wang, Xuedong; Lui, Guifu

    1991-07-01

    Ion implantation as a new mutagenic method has been used in the rice breeding program since 1986, and for mutation breeding of other crops later. It has been shown, in principle and in practice, that this method has many outstanding advantages: lower damage rate; higher mutation rate and wider mutational spectrum. Many new lines of rice with higher yield rate; broader disease resistance; shorter growing period but higher quality have been bred from ion beam induced mutants. Some of these lines have been utilized for the intersubspecies hybridization. Several new lines of cotton, wheat and other crops are now in breeding. Some biophysical effects of ion implantation for crop seeds have been studied.

  8. Magnetism in diamond-like carbon

    NASA Astrophysics Data System (ADS)

    Saito, Tetsuji; Ozeki, Takeshi; Terashima, Keiichi

    2005-12-01

    We report the magnetization of diamond-like carbon (DLC) produced by the rf plasma-enhanced CVD method. The magnetization of DLC film was found to be diamagnetic when it was deposited on a silicon substrate. On the other hand, DLC film showed ferromagnetic behavior when deposited on a stainless steel substrate. Chemical analysis confirmed that the magnetization of the DLC film was not due to contamination from the substrate. Raman spectrometry studies revealed that the DLC film deposited on the stainless steel substrate has a higher ratio of disordered peak ( ID) to graphite-like peak ( IG) than that deposited on the silicon substrate.

  9. In situ analysis of carbon isotopes in North American diamonds

    NASA Astrophysics Data System (ADS)

    van Rythoven, A. D.; Hauri, E. H.; Wang, J.; McCandless, T.; Shirey, S. B.; Schulze, D. J.

    2010-12-01

    Diamonds from three North American kimberlite occurrences were investigated with cathodoluminescence (CL) and secondary ion mass spectrometry (SIMS) to determine their growth history and carbon isotope composition. Diamonds analyzed include fourteen from Lynx (Quebec), twelve from Kelsey Lake (Colorado) and eleven from A154 South (Diavik mine, Northwest Territories). Growth histories for the diamonds vary from simple to highly complex based on their CL images and depending on the individual stone. Deformation laminae are evident in CL images of the Lynx diamonds that typically are brownish in color. Two to five points per diamond were analyzed by SIMS for carbon isotope composition. Sample heterogeneity is minimal in terms of δ13C (vs. PDB) values. Points within single diamond had a maximum range of approximately 1 ‰. The results for the A154 South (-6.4 to -3 ‰) and Kelsey Lake (-11.2 to -2.6 ‰) stones were in accordance with earlier reported values. The Lynx kimberlite stones have anomalously high ratios and range from -3.5 to +0.2 ‰ (average: -1.4 ‰). No previous carbon isotope analyses on diamonds from Lynx or any other eastern Superior craton occurrence have been published. The diamonds possess carbon isotope ratios higher than those for the only other reported analyses of Superior craton diamonds at Wawa, Ontario (-5.5 to -1.1 ‰). In global terms, the only published analyses of diamonds that consistently contain even higher values are those from New South Wales (Australia). However, these diamonds are alluvial and contain eclogitic and/or exotic mineral inclusions. The Lynx diamonds are entirely peridotitic and from a primary deposit. The unusually low (i.e. >-5‰) δ13C values of the Lynx (and Wawa) diamonds may indicate a different carbon reservoir for the Superior craton mantle as compared to other cratons.

  10. Ion implanted dielectric elastomer circuits

    NASA Astrophysics Data System (ADS)

    O'Brien, Benjamin M.; Rosset, Samuel; Anderson, Iain A.; Shea, Herbert R.

    2013-06-01

    Starfish and octopuses control their infinite degree-of-freedom arms with panache—capabilities typical of nature where the distribution of reflex-like intelligence throughout soft muscular networks greatly outperforms anything hard, heavy, and man-made. Dielectric elastomer actuators show great promise for soft artificial muscle networks. One way to make them smart is with piezo-resistive Dielectric Elastomer Switches (DES) that can be combined with artificial muscles to create arbitrary digital logic circuits. Unfortunately there are currently no reliable materials or fabrication process. Thus devices typically fail within a few thousand cycles. As a first step in the search for better materials we present a preliminary exploration of piezo-resistors made with filtered cathodic vacuum arc metal ion implantation. DES were formed on polydimethylsiloxane silicone membranes out of ion implanted gold nano-clusters. We propose that there are four distinct regimes (high dose, above percolation, on percolation, low dose) in which gold ion implanted piezo-resistors can operate and present experimental results on implanted piezo-resistors switching high voltages as well as a simple artificial muscle inverter. While gold ion implanted DES are limited by high hysteresis and low sensitivity, they already show promise for a range of applications including hysteretic oscillators and soft generators. With improvements to implanter process control the promise of artificial muscle circuitry for soft smart actuator networks could become a reality.

  11. High current metal ion implantation

    NASA Astrophysics Data System (ADS)

    Brown, Ian G.

    1990-04-01

    This report summarizes the research and development that has been carried out at Lawrence Berkeley Laboratory to develop a novel kind of high current metal ion source for metallurgical surface modification application. In ion implantation, an energetic ion beam is injected into a solid surface with the result that the surface composition is changed. For the case when the surface is a metal, the tribological properties of the new metallurgical surface can be significantly improved over the unimplanted surface. Previously, however, very intense metal ion beams have not been available, and this has been an impedance to the development of the field. With the MEVVA (Metal Vapor Vacuum Arc) ion source, metal ion beam currents of very high intensity have become available. This report outlines the progress made under the funded program in the four areas addressed: development of the MEVVA ion source for ion implantation application; research on the ion beam characteristics and behavior; development of the ion implantation facility; metallurgical ion implantation research that was performed.

  12. CVD Diamond, DLC, and c-BN Coatings for Solid Film Lubrication

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Murakawa, Masao; Watanabe, Shuichi; Takeuchi, Sadao; Miyake, Shojiro; Wu, Richard L. C.

    1998-01-01

    The main criteria for judging coating performance were coefficient of friction and wear rate, which had to be less than 0.1 and 10(exp -6) cubic MM /(N*m), respectively. Carbon- and nitrogen-ion-implanted, fine-grain, chemical-vapor-deposited (CVD) diamond and diamondlike carbon (DLC) ion beam deposited on fine-grain CVD diamond met the criteria regardless of environment (vacuum, nitrogen, and air).

  13. CVD Diamond, DLC, and c-BN Coatings for Solid Film Lubrication

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Murakawa, Masao; Watanabe, Shuichi; Takeuchi, Sadao; Miyake, Shojiro; Wu, Richard L. C.

    1998-01-01

    The main criteria for judging coating performance were coefficient of friction and wear rate, which had to be less than 0.1 and 10(exp -6) cubic MM /(N*m), respectively. Carbon- and nitrogen-ion-implanted, fine-grain, chemical-vapor-deposited (CVD) diamond and diamondlike carbon (DLC) ion beam deposited on fine-grain CVD diamond met the criteria regardless of environment (vacuum, nitrogen, and air).

  14. Carbon isotope ratios and impurities in diamonds from Southern Africa

    NASA Astrophysics Data System (ADS)

    Kidane, Abiel; Koch-Müller, Monika; Morales, Luiz; Wiedenbeck, Michael; De Wit, Maarten

    2015-04-01

    We are investigating the sources of diamonds from southern Africa by studying both their carbon isotopic composition and chemical impurities. Our samples include macro-sized diamonds from River Ranch kimberlite in Zimbabwe and the Helam and Klipspringer kimberlitic deposits from South Africa, as well as micro-sized diamonds from Klipspringer and Premier kimberlites in South Africa. We have characterized the samples for their structurally bounded nitrogen, hydrogen and platelets defect using a Fourier Transmission Infrared Spectroscopy (FTIR). Using the DiaMap routine, open source software (Howell et al., 2012), IR spectra were deconvulated and quantified for their nitrogen (A, B and D components) and hydrogen contents. High to moderate nitrogen concentrations (1810 to 400 µg/g; 400 to 50 µg/g respectively) were found in diamonds from Klipspringer and Helam. Moderate to low (<50 µg/g) nitrogen concentrations were observed in diamonds from Premier and River Ranch. Type II diamonds, i.e. diamonds with no N impurities, which are presumed to have been derived from ultramafic sources, are found in the River Ranch deposit. The macro- and micro-size diamonds from the Klipspringer deposit display similar nitrogen defects, with higher nitrogen concentration and more frequent D components found in the macro-size diamonds. One of the first steps towards reliable carbon isotope studies is the development of calibration materials for SIMS carbon isotopic analyses. We have investigated candidate materials both from a polycrystalline synthetic diamond sheet and two natural gem quality diamonds from Juina (Brazil). Electron-based images of the synthetic diamond sheet, obtained using GFZ Potsdam's dual beam FIB instrument, show many diamond grains with diameters greater than 35 µm. SIMS testing of the isotopic homogeneity of the back and front sides of the synthetic sheets reveal similar 13C/12C ratio within a RSD of <1 ‰ . SIMS isotopic analyses of the two natural diamond RMs

  15. Morphology and formation process of diamond from glassy carbon

    NASA Astrophysics Data System (ADS)

    Miyamoto, Manabu; Akaishi, Minoru; Ohsawa, Toshikazu; Yamaoka, Shinobu; Fukunaga, Osamu

    1989-10-01

    Under static high pressure conditions in the presence of a catalyst metal, a diamond formation process was studied using glassy carbon as a starting source, which was prepared by pyrolysis of furfuryl alcohol resin. Above 1200 °C of the pyrolysis temperature, diamond formation was clearly observed in Ni, Fe, Co and their alloy catalysts. The hydrogen content in the starting carbon has a drastic effect on the diamond formation. The maximum content of the hydrogen in the glassy carbon had to be between 1200 and 2200 ppm to see diamond formation. In the Fe-rich catalyst, a characteristic needle-like diamond was formed due to the texture of the carbon source and the nature of the catalyst.

  16. Carbon Onions as Nanoscopic Pressure Cells for Diamond Formation

    NASA Astrophysics Data System (ADS)

    Banhart, Florian

    1997-03-01

    Concentric-shell carbon onions form under electron irradiation of different carbon precursors in an electron microscope. Carbon onions under irradiation at high temperature are in a state of high compression with a considerable decrease of the c-plane spacing towards the centre. Under prolonged irradiation at temperatures around 900 K the cores of the graphitic onions transform into diamond crystals (F. Banhart and P.M. Ajayan, Nature 382), 433 (1996). Hence, carbon onions can be thought of as nanoscopic pressure cells for the directly observable nucleation and growth of diamond from graphitic material. The diamond crystals grow under further irradiation until the whole graphitic particles have transformed to diamond. Apparently the conversion of the graphitic structure to diamond starts at high pressure and proceeds at decreasing, possibly even at zero pressure. The experiment is carried out in a transmission electron microscope which enables us to monitor this phase transformation in-situ on an atomic scale.

  17. The carbon isotopic composition of Novo Urei diamonds

    NASA Technical Reports Server (NTRS)

    Fisenko, A. V.; Semjenova, L. F.; Verchovsky, A. B.; Russell, S. S.; Pillinger, C. T.

    1993-01-01

    The carbon isotopic composition of diamond grains isolated from the Novo Urei meteorite are discussed. A diamond separate was obtained from 2g of whole rock using the chemical treatments described aimed at obtaining very pure diamond. X ray diffraction of the residue, which represented 5000 ppm of the parent mass, indicated only the presence of the desired mineral. The diamond crystals were 1-30 microns in diameter, and some grains had a yellow color. The chemical treatments were followed by a size separation to give a 1-10 microns and a 5-30 microns fraction, which were named DNU-1 and DNU-2, respectively.

  18. Novel phase of carbon, ferromagnetism, and conversion into diamond

    NASA Astrophysics Data System (ADS)

    Narayan, Jagdish; Bhaumik, Anagh

    2015-12-01

    We report the discovery of a new phase of carbon (referred to as Q-carbon) and address fundamental issues related to direct conversion of carbon into diamond at ambient temperatures and pressures in air without any need for catalyst and presence of hydrogen. The Q-carbon is formed as result of quenching from super undercooled state by using high-power nanosecond laser pulses. We discuss the equilibrium phase diagram (P vs. T) of carbon and show that by rapid quenching kinetics can shift thermodynamic graphite/diamond/liquid carbon triple point from 5000 K/12 GPa to super undercooled carbon at atmospheric pressure in air. It is shown that nanosecond laser heating of diamond-like amorphous carbon on sapphire, glass, and polymer substrates can be confined to melt carbon in a super undercooled state. By quenching the carbon from the super undercooled state, we have created a new state of carbon (Q-carbon) from which nanodiamond, microdiamond, microneedles, and single-crystal thin films are formed depending upon the nucleation and growth times allowed for diamond formation. The Q-carbon quenched from liquid is a new state of solid carbon with a higher mass density than amorphous carbon and a mixture of mostly fourfold sp3 (75%-85%) with the rest being threefold sp2 bonded carbon (with distinct entropy). It is expected to have new and improved mechanical hardness, electrical conductivity, chemical, and physical properties, including room-temperature ferromagnetism (RTFM) and enhanced field emission. Here we present interesting results on RTFM, enhanced electrical conductivity and surface potential of Q-carbon to emphasize its unique properties. The Q-carbon exhibits robust bulk ferromagnetism with estimated Curie temperature of about 500 K and saturation magnetization value of 20 emu g-1. From the Q-carbon, diamond phase is nucleated and a variety of micro- and nanostructures and large-area single-crystal diamond sheets are grown by allowing growth times as needed

  19. Novel phase of carbon, ferromagnetism, and conversion into diamond

    SciTech Connect

    Narayan, Jagdish Bhaumik, Anagh

    2015-12-07

    We report the discovery of a new phase of carbon (referred to as Q-carbon) and address fundamental issues related to direct conversion of carbon into diamond at ambient temperatures and pressures in air without any need for catalyst and presence of hydrogen. The Q-carbon is formed as result of quenching from super undercooled state by using high-power nanosecond laser pulses. We discuss the equilibrium phase diagram (P vs. T) of carbon and show that by rapid quenching kinetics can shift thermodynamic graphite/diamond/liquid carbon triple point from 5000 K/12 GPa to super undercooled carbon at atmospheric pressure in air. It is shown that nanosecond laser heating of diamond-like amorphous carbon on sapphire, glass, and polymer substrates can be confined to melt carbon in a super undercooled state. By quenching the carbon from the super undercooled state, we have created a new state of carbon (Q-carbon) from which nanodiamond, microdiamond, microneedles, and single-crystal thin films are formed depending upon the nucleation and growth times allowed for diamond formation. The Q-carbon quenched from liquid is a new state of solid carbon with a higher mass density than amorphous carbon and a mixture of mostly fourfold sp{sup 3} (75%–85%) with the rest being threefold sp{sup 2} bonded carbon (with distinct entropy). It is expected to have new and improved mechanical hardness, electrical conductivity, chemical, and physical properties, including room-temperature ferromagnetism (RTFM) and enhanced field emission. Here we present interesting results on RTFM, enhanced electrical conductivity and surface potential of Q-carbon to emphasize its unique properties. The Q-carbon exhibits robust bulk ferromagnetism with estimated Curie temperature of about 500 K and saturation magnetization value of 20 emu g{sup −1}. From the Q-carbon, diamond phase is nucleated and a variety of micro- and nanostructures and large-area single-crystal diamond sheets are grown by allowing

  20. Biosensing properties of diamond and carbon nanotubes.

    PubMed

    Poh, Wei Choong; Loh, Kian Ping; De Zhang, Wei; Triparthy, Sudhiranjan; Ye, Jian-Shan; Sheu, Fwu-Shan

    2004-06-22

    The biochemical properties of boron-doped diamond (BDD), carbon nanofiber, fullerene, and multiwalled carbon nanotube (MWCNT) electrodes have been investigated comparatively. Physiochemical factors which affect the biosensing properties such as surface hydrophobicities, effective surface area, and intrinsic material properties are studied. Voltammetric responses of the as-grown thin film electrode and surface-modified electrode to biomolecules such as L-ascorbic acid (L-AA), dopamine (DA), and uric acid are examined. As-grown MWCNT electrodes exhibit selective voltammetric responses to the different biomolecules and faster electron-transfer kinetics compared to BDD. The selective response is due to the considerably lower anodic potential of L-AA on MWCNT (-48 mVvs Ag/AgCl compared to 575 mV on BDD). This electrocatalytic response can be replicated on a nonselective carbon nanofiber electrode by coating it with gold nanoparticles. BDD has no intrinsic selective response to L-AA, and surface modification by anodic polarization is necessary for resolving L-AA and DA.

  1. Ion implantation to reduce wear on polyethylene prosthetic devices. Rept. for Aug 89-Jan 91

    SciTech Connect

    Not Available

    1991-05-01

    Researchers studied the use of ion implantation to improve the wear performance of ultra high molecular weight polyethylene (UHMWPE). UHMWPE samples were implanted with high energy ions, tested for wear performance, and compared to unimplanted control samples. Surface friction and hardness measurements, Raman scattering, Rutherford backscattering (RBS), water contact angle, and film transfer tests were performed to characterize the surface property changes of implanted UHMWPE samples. Results indicated a 90% reduction in wear on implanted UHMWPE disks. Implantation increased surface microhardness and surface energy. The Raman spectrum revealed a diamond-like signature, indicting carbon bonds of a different nature than those found in unimplanted polyehtylene. Photographic analysis of pins used in wear testing revealed differences between implanted and unimplanted samples in the polyethylene film transferred in the initial stages of wear from the disk to the pin.

  2. Morphological analysis and cell viability on diamond-like carbon films containing nanocrystalline diamond particles

    NASA Astrophysics Data System (ADS)

    Almeida, C. N.; Ramos, B. C.; Da-Silva, N. S.; Pacheco-Soares, C.; Trava-Airoldi, V. J.; Lobo, A. O.; Marciano, F. R.

    2013-06-01

    The coating of orthopedic prostheses with diamond like-carbon (DLC) has been actively studied in the past years, in order to improve mechanical, tribological properties and promote the material's biocompatibility. Recently, the incorporation of crystalline diamond nanoparticles into the DLC film has shown effective in combating electrochemical corrosion in acidic medias. This study examines the material's biocompatibility through testing by LDH release and MTT, on in vitro fibroblasts; using different concentrations of diamond nanoparticles incorporated into the DLC film. Propounding its potential use in orthopedics in order to increase the corrosion resistance of prostheses and improve their relationship with the biological environment.

  3. CVD Diamond, DLC, and c-BN Coatings for Solid Film Lubrication

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1998-01-01

    When the main criteria for judging coating performance were coefficient of friction and wear rate, which had to be less than 0.1 and 10(exp -6) mm(exp 3)/N-m, respectively, carbon- and nitrogen-ion-implanted, fine-grain CVD diamond and DLC ion beam deposited on fine-grain CVD diamond met the requirements regardless of environment (vacuum, nitrogen, and air).

  4. Diamond film growth argon-carbon plasmas

    DOEpatents

    Gruen, Dieter M.; Krauss, Alan R.; Liu, Shengzhong; Pan, Xianzheng; Zuiker, Christopher D.

    1998-01-01

    A method and system for manufacturing diamond film. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrogen and hydrocarbon and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous and deposition of a diamond film on a substrate.

  5. Local structure of liquid carbon controls diamond nucleation.

    PubMed

    Ghiringhelli, L M; Valeriani, C; Meijer, E J; Frenkel, D

    2007-08-03

    Diamonds melt at temperatures above 4000 K. There are no measurements of the steady-state rate of the reverse process, i.e., diamond nucleation from the melt, because experiments are difficult at these extreme temperatures and pressures. Using numerical simulations, we estimate the diamond nucleation rate and find that it increases by many orders of magnitude when the pressure is increased at constant supersaturation. The reason is that by increasing the pressure the local coordination of the liquid changes from threefold to fourfold, and we show that the free-energy cost to create a diamond-liquid interface is lower in the fourfold than in the threefold liquid. We speculate that this mechanism for nucleation control is relevant for crystallization in many network-forming liquids. We conclude that homogeneous diamond nucleation is likely in carbon-rich stars and unlikely in gaseous planets.

  6. Graphene diamond-like carbon films heterostructure

    SciTech Connect

    Zhao, Fang; Afandi, Abdulkareem; Jackman, Richard B.

    2015-03-09

    A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ∼25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications.

  7. Electronic devices from diamond-like carbon

    NASA Astrophysics Data System (ADS)

    Milne, W. I.

    2003-03-01

    This paper reviews the work carried out over the past few years on the application of diamond-like carbon (DLC) materials to electronic devices. The use of such materials is still in its infancy due to their high defect state density and associated low mobilities. To date, the major effort in the electronic field has been in their attempted use as cold cathode field emitters where their low threshold field has attracted much attention. However, attempts have also been made to produce metal semiconductor metal structures, diodes, a-C/c-Si heterostructures and thin film transistors with varying degrees of success. A brief review of work carried out on the use of DLCs in solar cell manufacture will also be presented but it seems at this early stage in their development that the most promising area for future development will be in the field of microelectromechanical structures where their friction, stiction and wear properties make them prime candidates for use in moving mechanical assemblies.

  8. Carbon onions as nanoscopic pressure cells for diamond formation

    NASA Astrophysics Data System (ADS)

    Banhart, F.; Ajayan, P. M.

    1996-08-01

    SPHERICAL particles of carbon consisting of concentric graphite-like shells ('carbon onions') can be formed by electron irradiation of graphitic carbon materials1,2. Here we report that, when such particles are heated to ~700 °C and irradiated with electrons, their cores can be transformed to diamond. Under these conditions the spacing between layers in the carbon onions decreases from 0.31 in the outer shells (slightly less than the 0.34-nm layer spacing of graphite) to about 0.22 nm in the core, indicating considerable compression towards the particle centres. We find that this compression allows diamond to nucleate-in effect the carbon onions act as nanoscopic pressure cells for diamond formation.

  9. Ion implantation damage in solids

    NASA Astrophysics Data System (ADS)

    Zhong, Yuncheng

    Ion implantation damage in silicon and ion irradiation induced surface smoothing and roughening process on metal and metallic alloys were studied. Defects were produced in Si by ion implantation. The initial state of damage, the onset temperature of interstitial mobility, the broader annealing behavior of the defects and the effect of surface on damage accumulation were studied using diffuse X-ray scattering, high resolution X-ray diffraction and transmission electron microscopy methods. A critical dose was observed during self-ion irradiation at 100°C for the conversion of small three-dimensional clusters in two-dimensional dislocation loops. The annealing behavior following self-ion irradiations shows different behavior from that following irradiation with inert gas ions. The surface was shown to be an effective sink for defects and that it plays an important role in defect accumulation during low energy implantation. Ion induced surface smoothing and roughening processes were studied using Molecular Dynamics (MD) computer simulation. The simulations on self-ion bombarded W showed the effect of the surface on defect production and the roughening of the surface. The simulations on the CuTi, Ag and Ni with amorphous and crystalline states reveal the smoothing and roughening process due to a single ion impact.

  10. Modification of polyvinyl alcohol surface properties by ion implantation

    NASA Astrophysics Data System (ADS)

    Pukhova, I. V.; Kurzina, I. A.; Savkin, K. P.; Laput, O. A.; Oks, E. M.

    2017-05-01

    We describe our investigations of the surface physicochemical properties of polyvinyl alcohol modified by silver, argon and carbon ion implantation to doses of 1 × 1014, 1 × 1015 and 1 × 1016 ion/cm2 and energies of 20 keV (for C and Ar) and 40 keV (for Ag). Infrared spectroscopy (IRS) indicates that destructive processes accompanied by chemical bond (sbnd Cdbnd O) generation are induced by implantation, and X-ray photoelectron spectroscopy (XPS) analysis indicates that the implanted silver is in a metallic Ag3d state without stable chemical bond formation with polymer chains. Ion implantation is found to affect the surface energy: the polar component increases while the dispersion part decreases with increasing implantation dose. Surface roughness is greater after ion implantation and the hydrophobicity increases with increasing dose, for all ion species. We find that ion implantation of Ag, Ar and C leads to a reduction in the polymer microhardness by a factor of five, while the surface electrical resistivity declines modestly.

  11. Plasma and ion beam enhanced chemical vapour deposition of diamond and diamond-like carbon

    NASA Astrophysics Data System (ADS)

    Tang, Yongji

    WC-Co cutting tools are widely used in the machining industry. The application of diamond coatings on the surfaces of the tools would prolong the cutting lifetime and improves the manufacturing efficiency. However, direct chemical vapor deposition (CVD) of diamond coatings on WC-Co suffer from severe premature adhesion failure due to interfacial graphitization induced by the binder phase Co. In this research, a combination of hydrochloric acid (HCl) and hydrogen (H2) plasma pretreatments and a novel double interlayer of carbide forming element (CFE)/Al were developed to enhance diamond nucleation and adhesion. The results showed that both the pretreatments and interlayers were effective in forming continuous and adhesive nanocrystalline diamond coatings. The method is a promising replacement of the hazardous Murakami's regent currently used in WC-Co pretreatment with a more environmental friendly approach. Apart from coatings, diamond can be fabricated into other forms of nanostructures, such as nanotips. In this work, it was demonstrated that oriented diamond nanotip arrays can be fabricated by ion beam etching of as-grown CVD diamond. The orientation of diamond nanotips can be controlled by adjusting the direction of incident ion beam. This method overcomes the limits of other techniques in producing nanotip arrays on large areas with controlled orientation. Oriented diamond nano-tip arrays have been used to produce anisotropic frictional surface, which is successfully used in ultra-precision positioning systems. Diamond-like carbon (DLC) has many properties comparable to diamond. In this thesis, the preparation of alpha-C:H thin films by end-Hall (EH) ion source and the effects of ion energy and nitrogen doping on the microstructure and mechanical properties of the as-deposited thin films were investigated. The results have demonstrated that smooth and uniform alpha-C:H and alpha-C:H:N films with large area and reasonably high hardness and Young's modulus can be

  12. Plasma deposited diamond-like carbon films for large neutralarrays

    SciTech Connect

    Brown, I.G.; Blakely, E.A.; Bjornstad, K.A.; Galvin, J.E.; Monteiro, O.R.; Sangyuenyongpipat, S.

    2004-07-15

    To understand how large systems of neurons communicate, we need to develop methods for growing patterned networks of large numbers of neurons. We have found that diamond-like carbon thin films formed by energetic deposition from a filtered vacuum arc carbon plasma can serve as ''neuron friendly'' substrates for the growth of large neural arrays. Lithographic masks can be used to form patterns of diamond-like carbon, and regions of selective neuronal attachment can form patterned neural arrays. In the work described here, we used glass microscope slides as substrates on which diamond-like carbon was deposited. PC-12 rat neurons were then cultured on the treated substrates and cell growth monitored. Neuron growth showed excellent contrast, with prolific growth on the treated surfaces and very low growth on the untreated surfaces. Here we describe the vacuum arc plasma deposition technique employed, and summarize results demonstrating that the approach can be used to form large patterns of neurons.

  13. Carbonate Mineral Assemblages as Inclusions in Yakutian Diamonds: TEM Verifications

    NASA Astrophysics Data System (ADS)

    Logvinova, A. M.; Wirth, R.; Sobolev, N. V.; Taylor, L. A.

    2014-12-01

    Carbonate mineral inclusions are quite rare in diamonds from the upper mantle, but are evidence for a carbonate abundance in the mantle. It is believed that such carbonatitic inclusions originated from high-density fluids (HDFs) that were enclosed in diamond during its growth. Using TEM and EPMA, several kinds of carbonate inclusions have been identified in Yakutian diamonds : aragonite, dolomite, magnesite, Ba-, Sr-, and Fe-rich carbonates. Most of them are represented by multi-phase inclusions of various chemically distinct carbonates, rich in Ca, Mg, and K and associated with minor amounts of silicate, oxide, saline, and volatile phases. Volatiles, leaving some porosity, played a significant role in the diamond growth. A single crystal of aragonite (60μm) is herein reported for the first time. This inclusion is located in the center of a diamond from the Komsomolskaya pipe. Careful CL imaging reveals the total absence of cracks around the aragonite inclusion - i.e., closed system. This inclusion has been identified by X-ray diffraction and microprobe analysis. At temperatures above 1000 0C, aragonite is only stable at high pressures of 5-6 GPa. Inside this aragonite, we observed nanocrystalline inclusions of titanite, Ni-rich sulfide, magnetite, water-bearing Mg-silicate, and fluid bubbles. Dolomite is common in carbonate multi-phase inclusions in diamonds from the Internatsionalnaya, Yubileinaya, and Udachnaya kimberlite pipes. Alluvial diamonds of the northeastern Siberian Platform are divided into two groups based on the composition of HDFs: 1) Mg-rich multi-phase inclusions (60% magnesite + dolomite + Fe-spinel + Ti-silicate + fluid bubbles); and 2) Ca-rich multi-phase inclusions (Ca,Ba-, Ca,Sr-, Ca,Fe-carbonates + Ti-silicate + Ba-apatite + fluid bubbles). High-density fluids also contain K. Volatiles in the fluid bubbles are represented by water, Cl, F, S, CO2, CH4, and heavy hydrocarbons. Origin of the second group of HDFs may be related to the non

  14. Diamond film growth argon-carbon plasmas

    DOEpatents

    Gruen, D.M.; Krauss, A.R.; Liu, S.Z.; Pan, X.Z.; Zuiker, C.D.

    1998-12-15

    A method and system are disclosed for manufacturing diamond film. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrogen and hydrocarbon and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous and deposition of a diamond film on a substrate. 29 figs.

  15. In vitro evaluation of diamond-like carbon coatings with a Si/SiC x interlayer on surgical NiTi alloy

    NASA Astrophysics Data System (ADS)

    Liu, C. L.; Chu, Paul K.; Yang, D. Z.

    2007-04-01

    Diamond-like carbon (DLC) coatings were produced with a Si/SiCx interlayer by a hybrid plasma immersion ion implantation and deposition process to improve the adhesion between the carbon layer and surgical NiTi alloy substrate. The structure, mechanical properties, corrosion resistance and biocompatibility of the coatings were evaluated in vitro by Raman spectroscopy, pin-on-disk tests, potentiodynamic polarization tests and simulated fluid immersion tests. The DLC coatings with a Si/SiCx interlayer of a suitable thickness have better adhesion, lower friction coefficients and enhanced corrosion resistance. In the simulated body fluid tests, the coatings exhibit effective corrosion protection and good biocompatibility as indicated by PC12 cell cultures. DLC films fabricated on a Si/SiCx interlayer have high potential as protective coatings for biomedical NiTi materials.

  16. Diamond Synthesis and Carbon Solubility in a Hydrous Granitoid System

    NASA Astrophysics Data System (ADS)

    Renfro, A.; Dobrzhinetskaya, L. P.

    2004-12-01

    An increasing number of UHP metamorphic terranes incorporated in collisional orogenic belts have been identified since the first discovery of diamonds within felsic metamorphic rocks of Kokchetav massif, Kazakhstan, extending up to ˜4000 km in length in the Dabie-SuLu-Qinling belt of China. Some have suggested that all orogenic belt diamonds formed from a carbonate or calc-alkaline melt similar to those derived from kimberlitic pipes, or alternatively that they formed from a carbon-enriched silicate melt with a granitoid bulk chemistry composition. Another group has suggested that orogenic belt diamonds crystallized from a COH-rich supercritical fluid. While the diversity of the minor components accompanying the SiO2-dominated inclusions from Kokchetav diamonds, as well as the presence of cavities bearing traces of a former fluid, suggest the idea of diamond growth from a COH fluid, a Si-rich melt as a source for diamond formation cannot be ruled out. Although many experiments were performed on diamond synthesis and on the petrology of diamond-bearing rocks, no consensus has been reached as to which of the mentioned growth media is correct to explain orogenic belt diamond formation. We report here the results of an experimental program undertaken to determine the critical point of the Si-Al-K-C-H2O system (and thus, to distinguish a melt environment from a fluid one) and to provide an understanding of how diamond is crystallized in hydrous subducted felsic continental crust. Carbon solubility in these systems was qualitatively determined based on the observed diamond growth rates. Experiments were performed at in a Walker-style multianvil apparatus at P=7 GPa and T=1500-1700° C with SiO2 ranging from 90 wt. %, imitating diamondiferous quartzite, to 62 wt. %, imitating a wide range of feldspathic diamondiferous gneisses. An additional parameter, oxygen fugacity, was also varied to test its affects on the solubility of carbon in Si-rich melt/fluid.

  17. Workshop on diamond and diamond-like-carbon films for the transportation industry

    SciTech Connect

    Nichols, F.A.; Moores, D.K.

    1993-01-01

    Applications exist in advanced transportation systems as well as in manufacturing processes that would benefit from superior tribological properties of diamond, diamond-like-carbon and cubic boron nitride coatings. Their superior hardness make them ideal candidates as protective coatings to reduce adhesive, abrasive and erosive wear in advanced diesel engines, gas turbines and spark-ignited engines and in machining and manufacturing tools as well. The high thermal conductivity of diamond also makes it desirable for thermal management not only in tribological applications but also in high-power electronic devices and possibly large braking systems. A workshop has been recently held at Argonne National Laboratory entitled ``Diamond and Diamond-Like-Carbon Films for Transportation Applications`` which was attended by 85 scientists and engineers including top people involved in the basic technology of these films and also representatives from many US industrial companies. A working group on applications endorsed 18 different applications for these films in the transportation area alone. Separate abstracts have been prepared.

  18. Surface Design and Engineering Toward Wear-Resistant, Self-Lubricant Diamond Films and Coatings. Chapter 10

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1999-01-01

    This chapter describes three studies on the surface design, surface engineering, and tribology of chemical-vapor-deposited (CVD) diamond films and coatings toward wear-resistant, self-lubricating diamond films and coatings. Friction mechanisms and solid lubrication mechanisms of CVD diamond are stated. Effects of an amorphous hydrogenated carbon on CVD diamond, an amorphous, nondiamond carbon surface layer formed on CVD diamond by carbon and nitrogen ion implantation, and a materials combination of cubic boron nitride and CVD diamond on the adhesion, friction, and wear behaviors of CVD diamond in ultrahigh vacuum are described. How surface modification and the selected materials couple improved the tribological functionality of coatings, giving low coefficient of friction and good wear resistance, is explained.

  19. Capacitively coupled RF diamond-like-carbon reactor

    DOEpatents

    Devlin, David James; Coates, Don Mayo; Archuleta, Thomas Arthur; Barbero, Robert Steven

    2000-01-01

    A process of coating a non-conductive fiber with diamond-like carbon, including passing a non-conductive fiber between a pair of parallel metal grids within a reaction chamber, introducing a hydrocarbon gas into the reaction chamber, forming a plasma within the reaction chamber for a sufficient period of time whereby diamond-like carbon is formed upon the non-conductive fiber, is provided together with a reactor chamber for deposition of diamond-like carbon upon a non-conductive fiber, including a vacuum chamber, a cathode assembly including a pair of electrically isolated opposingly parallel metal grids spaced apart at a distance of less than about 1 centimeter, an anode, a means of introducing a hydrocarbon gas into said vacuum chamber, and a means of generating a plasma within said vacuum chamber.

  20. Capacitively coupled RF diamond-like-carbon reactor

    SciTech Connect

    Devlin, D.J.; Coates, D.M.; Archuleta, T.A.; Barbero, R.S.

    2000-03-14

    A process of coating a non-conductive fiber with diamond-like carbon, including passing a non-conductive fiber between a pair of parallel metal grids within a reaction chamber, introducing a hydrocarbon gas into the reaction chamber, forming a plasma within the reaction chamber for a sufficient period of time whereby diamond-like carbon is formed upon the non-conductive fiber, is provided together with a reactor chamber for deposition of diamond-like carbon upon a non-conductive fiber, including a vacuum chamber, a cathode assembly including a pair of electrically isolated opposingly parallel metal grids spaced apart at a distance of less than about 1 centimeter, an anode, a means of introducing a hydrocarbon gas into said vacuum chamber, and a means of generating a plasma within said vacuum chamber.

  1. A new phase transformation path from nanodiamond to new-diamond via an intermediate carbon onion.

    PubMed

    Xiao, J; Li, J L; Liu, P; Yang, G W

    2014-12-21

    The investigation of carbon allotropes such as graphite, diamond, fullerenes, nanotubes and carbon onions and mechanisms that underlie their mutual phase transformation is a long-standing problem of great fundamental importance. New diamond (n-diamond) is a novel metastable phase of carbon with a face-centered cubic structure; it is called "new diamond" because many reflections in its electron diffraction pattern are similar to those of diamond. However, producing n-diamond from raw carbon materials has so far been challenging due to n-diamond's higher formation energy than that of diamond. Here, we, for the first time, demonstrate a new phase transformation path from nanodiamond to n-diamond via an intermediate carbon onion in the unique process of laser ablation in water, and establish that water plays a crucial role in the formation of n-diamond. When a laser irradiates colloidal suspensions of nanodiamonds at ambient pressure and room temperature, nanodiamonds are first transformed into carbon onions serving as an intermediate phase, and sequentially carbon onions are transformed into n-diamonds driven by the laser-induced high temperature and high pressure from the carbon onion as a nanoscaled temperature and pressure cell upon the process of laser irradiation in a liquid. This phase transformation not only provides new insight into the physical mechanism involved, but also offers one suitable opportunity for breaking controllable pathways between n-diamond and carbon allotropes such as diamond and carbon onions.

  2. Diamond-Coated Carbon Nanotubes for Efficient Field Emission

    NASA Technical Reports Server (NTRS)

    Dimitrijevic, Stevan; Withers, James C.

    2005-01-01

    Field-emission cathodes containing arrays of carbon nanotubes coated with diamond or diamondlike carbon (DLC) are undergoing development. Multiwalled carbon nanotubes have been shown to perform well as electron field emitters. The idea underlying the present development is that by coating carbon nanotubes with wideband- gap materials like diamond or DLC, one could reduce effective work functions, thereby reducing threshold electric-field levels for field emission of electrons and, hence, improving cathode performance. To demonstrate feasibility, experimental cathodes were fabricated by (1) covering metal bases with carbon nanotubes bound to the bases by an electrically conductive binder and (2) coating the nanotubes, variously, with diamond or DLC by plasma-assisted chemical vapor deposition. In tests, the threshold electric-field levels for emission of electrons were reduced by as much as 40 percent, relative to those of uncoated- nanotube cathodes. Coating with diamond or DLC could also make field emission-cathodes operate more stably by helping to prevent evaporation of carbon from nanotubes in the event of overheating of the cathodes. Cathodes of this type are expected to be useful principally as electron sources for cathode-ray tubes and flat-panel displays.

  3. Panel 2 - properties of diamond and diamond-like-carbon films

    SciTech Connect

    Blau, P.J.; Clausing, R.E.; Ajayi, O.O.; Liu, Y.Y.; Purohit, A.; Bartelt, P.F.; Baughman, R.H.; Bhushan, B.; Cooper, C.V.; Dugger, M.T.; Freedman, A.; Larsen-Basse, J.; McGuire, N.R.; Messier, R.F.; Noble, G.L.; Ostrowki, M.H.; Sartwell, B.D.; Wei, R.

    1993-01-01

    This panel attempted to identify and prioritize research and development needs in determining the physical, mechanical and chemical properties of diamond and diamond-like-carbon films (D/DLCF). Three specific goals were established. They were: (1) To identify problem areas which produce concern and require a better knowledge of D/DLCF properties. (2) To identify and prioritize key properties of D/DLCF to promote transportation applications. (3) To identify needs for improvement in properties-measurement methods. Each of these goals is addressed subsequently.

  4. Theoretical Study of Diamond-Like Carbons and Nucleation of Diamond

    NASA Astrophysics Data System (ADS)

    Lee, Choon-Heung

    Different forms of amorphous carbon and hydrocarbons with varying elastic and optical properties, hardness, density and hydrogen content exist depending on the preparation technique. The structure can vary from graphitic to diamond -like, i.e., from mainly threefold coordinated to mainly four-fold coordinated. In order to study the properties of such materials, microscopic models must be developed. These studies include the modelling of crosslinked defective graphite, diamond nucleation along the graphite edges, and diamond-like carbons. Tamor's proposed structure for diamondlike carbon consists of crosslinked graphitic regions. We studied a concrete realization of this model in which the cross -links are produced by shortening the interplanar bond lengths. The model study was accomplished with a pure rhombohedral graphite cell. For this study we used a semi-empirical potential based on Tersoff's environment-dependent potential which contains angular terms. It is enhanced by a long-range potential which describes the interplanar interactions. We found a configuration corresponding to a local minimum. More general features such as the randomness of the distribution of cross-links are needed for a realistic model. A model study of diamond/graphite interfaces was motivated by recent observations by Li and Angus. They observed a significant enhancement of diamond nucleation on the graphite edge planes with the preferential orientation relationship: {0001} _{g} | {111 }_{d}, < 1120 >_{g} | < 101>_{d}. Two possible interface structures were studied using the Tersoff potential. We found that the models have comparable low interface energies even if they contain some dangling bonds. Moreover, lower interface energies were found when the dangling bonds of the non-bonded diamond layer were satisfied with hydrogen. We have proposed a growth mechanism based on this study. Finally, we constructed realistic models of dense amorphous carbon. The WWW (introduced earlier for a

  5. The effects of rapid recrystallization and ion implanted carbon on the solid phase epitaxial regrowth of Si{sub 1-x}Ge{sub x} alloy layers on silicon

    SciTech Connect

    Antonell, M.J.; Jones, K.S.; Haynes, T.E.

    1995-07-01

    Transmission electron microscopy has been combined with time-resolved reflectivity and ion channeling to study the effects of regrowth temperature and carbon introduction by ion implantation on the solid phase epitaxial regrowth (SPER) of strained 2000{Angstrom}, Si{sub 0.88}Ge{sub 0.12}/Si alloy films grown by molecular-beam epitaxy (MBE). Relative to the undoped layers, carbon incorporation in the MBE grown SiGe layers prior to regrowth at moderate temperatures (500--700C) has three main effects on SPER: these include a reduction in SPER rate, a delay in the onset of strain-relieving defect formation, and a sharpening of the amorphouse-crystalline (a/c) interface, i.e., promotion of a two-dimensional (planar) growth front. Recrystallization of amorphized SiGe layers at higher temperatures (1100C) substantially modifies the defect structure in samples both with and without carbon. At these elevated temperatures treading dislocations extend completely to the Si/SiGe interface. Stacking faults are eliminated in the high temperature regrowth, and the treading dislocation density is slightly higher with carbon implantation.

  6. Single-layer nano-carbon film, diamond film, and diamond/nano-carbon composite film field emission performance comparison

    SciTech Connect

    Wang, Xiaoping E-mail: wxpchina@sohu.com; Wang, Jinye; Wang, Lijun

    2016-05-09

    A series of single-layer nano-carbon (SNC) films, diamond films, and diamond/nano-carbon (D/NC) composite films have been prepared on the highly doped silicon substrate by using microwave plasma chemical vapor deposition techniques. The films were characterised by scanning electron microscopy, Raman spectroscopy, and field emission I-V measurements. The experimental results indicated that the field emission maximum current density of D/NC composite films is 11.8–17.8 times that of diamond films. And the field emission current density of D/NC composite films is 2.9–5 times that of SNC films at an electric field of 3.0 V/μm. At the same time, the D/NC composite film exhibits the advantage of improved reproducibility and long term stability (both of the nano-carbon film within the D/NC composite cathode and the SNC cathode were prepared under the same experimental conditions). And for the D/NC composite sample, a high current density of 10 mA/cm{sup 2} at an electric field of 3.0 V/μm was obtained. Diamond layer can effectively improve the field emission characteristics of nano-carbon film. The reason may be due to the diamond film acts as the electron acceleration layer.

  7. Single-layer nano-carbon film, diamond film, and diamond/nano-carbon composite film field emission performance comparison

    NASA Astrophysics Data System (ADS)

    Wang, Xiaoping; Wang, Jinye; Wang, Lijun

    2016-05-01

    A series of single-layer nano-carbon (SNC) films, diamond films, and diamond/nano-carbon (D/NC) composite films have been prepared on the highly doped silicon substrate by using microwave plasma chemical vapor deposition techniques. The films were characterised by scanning electron microscopy, Raman spectroscopy, and field emission I-V measurements. The experimental results indicated that the field emission maximum current density of D/NC composite films is 11.8-17.8 times that of diamond films. And the field emission current density of D/NC composite films is 2.9-5 times that of SNC films at an electric field of 3.0 V/μm. At the same time, the D/NC composite film exhibits the advantage of improved reproducibility and long term stability (both of the nano-carbon film within the D/NC composite cathode and the SNC cathode were prepared under the same experimental conditions). And for the D/NC composite sample, a high current density of 10 mA/cm2 at an electric field of 3.0 V/μm was obtained. Diamond layer can effectively improve the field emission characteristics of nano-carbon film. The reason may be due to the diamond film acts as the electron acceleration layer.

  8. Mechanism for diamond nucleation and growth on single crystal copper surfaces implanted with carbon

    NASA Technical Reports Server (NTRS)

    Ong, T. P.; Xiong, Fulin; Chang, R. P. H.; White, C. W.

    1992-01-01

    The nucleation and growth of diamond crystals on single-crystal copper surfaces implanted with carbon ions is studied. Microwave plasma-enhanced chemical-vapor deposition is used for diamond growth. The single-crystal copper substrates were implanted either at room or elevated temperature with carbon ions prior to diamond nucleation. This procedure leads to the formation of a graphite film on the copper surface which greatly enhances diamond crystallite nucleation. A simple lattice model is constructed for diamond growth on graphite as 111 line (diamond) parallel to 0001 line (graphite) and 110 line (diamond) parallel to 1 1 -2 0 (graphite).

  9. Mechanism for diamond nucleation and growth on single crystal copper surfaces implanted with carbon

    NASA Technical Reports Server (NTRS)

    Ong, T. P.; Xiong, Fulin; Chang, R. P. H.; White, C. W.

    1992-01-01

    The nucleation and growth of diamond crystals on single-crystal copper surfaces implanted with carbon ions is studied. Microwave plasma-enhanced chemical-vapor deposition is used for diamond growth. The single-crystal copper substrates were implanted either at room or elevated temperature with carbon ions prior to diamond nucleation. This procedure leads to the formation of a graphite film on the copper surface which greatly enhances diamond crystallite nucleation. A simple lattice model is constructed for diamond growth on graphite as 111 line (diamond) parallel to 0001 line (graphite) and 110 line (diamond) parallel to 1 1 -2 0 (graphite).

  10. Diamond and Carbon Nanotube Composites for Supercapacitor Devices

    NASA Astrophysics Data System (ADS)

    Moreira, João Vitor Silva; May, Paul William; Corat, Evaldo José; Peterlevitz, Alfredo Carlos; Pinheiro, Romário Araújo; Zanin, Hudson

    2017-02-01

    We report on the synthesis and electrochemical properties of diamond grown onto vertically aligned carbon nanotubes with high surface areas as a template, resulting in a composite material exhibiting high double-layer capacitance as well as low electrochemical impedance electrodes suitable for applications as supercapacitor devices. We contrast results from devices fabricated with samples which differ in both their initial substrates (Si and Ti) and their final diamond coatings, such as boron-doped diamond and diamond-like carbon (DLC). We present for first time a conducting model for non-doped DLC thin-films. All samples were characterized by scanning and transmission electron microscopy and Fourier transform infrared and Raman spectroscopy. Our results show specific capacitance as high as 8.25 F g-1 (˜1 F cm-2) and gravimetric specific energy and power as high as 0.7 W h kg-1 and 176.4 W kg-1, respectively, which suggest that these diamond/carbon nanotube composite electrodes are excellent candidates for supercapacitor fabrication.

  11. Implantation conditions for diamond nanocrystal formation in amorphous silica

    SciTech Connect

    Buljan, Maja; Radovic, Iva Bogdanovic; Desnica, Uros V.; Ivanda, Mile; Jaksic, Milko; Saguy, Cecile; Kalish, Rafi; Djerdj, Igor; Tonejc, Andelka; Gamulin, Ozren

    2008-08-01

    We present a study of carbon ion implantation in amorphous silica, which, followed by annealing in a hydrogen-rich environment, leads to preferential formation of carbon nanocrystals with cubic diamond (c-diamond), face-centered cubic (n-diamond), or simple cubic (i-carbon) carbon crystal lattices. Two different annealing treatments were used: furnace annealing for 1 h and rapid thermal annealing for a brief period, which enables monitoring of early nucleation events. The influence of implanted dose and annealing type on carbon and hydrogen concentrations, clustering, and bonding were investigated. Rutherford backscattering, elastic recoil detection analysis, infrared spectroscopy, transmission electron microscopy, selected area electron diffraction, ultraviolet-visible absorption measurements, and Raman spectroscopy were used to study these carbon formations. These results, combined with the results of previous investigations on similar systems, show that preferential formation of different carbon phases (diamond, n-diamond, or i-carbon) depends on implantation energy, implantation dose, and annealing conditions. Diamond nanocrystals formed at a relatively low carbon volume density are achieved by deeper implantation and/or lower implanted dose. Higher volume densities led to n-diamond and finally to i-carbon crystal formation. This observed behavior is related to damage sites induced by implantation. The optical properties of different carbon nanocrystal phases were significantly different.

  12. Diamond film growth on Ti-implanted glassy carbon

    NASA Astrophysics Data System (ADS)

    Brewer, M. A.; Brown, I. G.; Evans, P. J.; Hoffman, A.

    1993-09-01

    The growth of diamond thin films on glassy carbon substrates has been investigated as a function of deposition time for different surface treatments. Implantation of Ti to a dose of 1.7 x 10 exp 17/sq cm and abrasion with diamond powder have both been examined to determine their effect on film nucleation and growth. At the shorter deposition times studied, diamond nucleation was observed on all test samples with those subjected to the abrasive pretreatment exhibiting the higher growth rates. However, the adhesion and uniformity of films on unimplanted glassy carbon were found to deteriorate significantly following deposition runs of 14 and 21 h duration. This was attributed to a destabilization of the underlying surface caused by plasma erosion.

  13. Classroom Demonstration: Combustion of Diamond to Carbon Dioxide Followed by Reduction to Graphite

    ERIC Educational Resources Information Center

    Miyauchi, Takuya; Kamata, Masahiro

    2012-01-01

    An educational demonstration shows the combustion of carbon to carbon dioxide and then the reduction of carbon dioxide to carbon. A melee diamond is the source of the carbon and the reaction is carried out in a closed flask. The demonstration helps students to realize that diamonds are made of carbon and that atoms do not change or vanish in…

  14. Classroom Demonstration: Combustion of Diamond to Carbon Dioxide Followed by Reduction to Graphite

    ERIC Educational Resources Information Center

    Miyauchi, Takuya; Kamata, Masahiro

    2012-01-01

    An educational demonstration shows the combustion of carbon to carbon dioxide and then the reduction of carbon dioxide to carbon. A melee diamond is the source of the carbon and the reaction is carried out in a closed flask. The demonstration helps students to realize that diamonds are made of carbon and that atoms do not change or vanish in…

  15. Mass Density as Basis Parameter on Mechanical Properties under Diamond-Like Carbon Prepared in Wide Range of Conditions Using Variety of Methods

    NASA Astrophysics Data System (ADS)

    Kaneko, Satoru; Horiuchi, Takahiro; Yoshida, Kentaro; Tanaka, Satomi; Kato, Chihiro; Kano, Makoto; Kumagai, Masao; Tanoue, Hideto; Kamiya, Masao; Takikawa, Hirofumi

    2011-01-01

    Diamond-like carbon (DLC) films were prepared on steel substrates by eleven suppliers using different types of equipment utilized in each company's own coating formation process. The deposition methods include sputtering, electron cyclotron resonance chemical vapor deposition (ECR-CVD), plasma enhanced chemical vapor deposition (PECVD), arc ion plating (Arc), filtered arc deposition (FAD), and plasma-based ion implantation (PBII). Some correlation of mechanical properties seems to be valid in a narrow range of parameters produced by a particular deposition method. In order to investigate general correlations in a wide range of parameters, various DLC films were prepared by different suppliers on the same substrate, and were evaluated in exactly the same manner. Independent of deposition methods, there existed correlations of the hardness, elastic modulus and Raman shift with a wide range of mass density.

  16. Ion Implantation of Zinc Sulphide Thin Films,

    DTIC Science & Technology

    The report considers the use of ion implantation as a means of preparing rare earth doped thin films of zinc sulphide, and presents preliminary results on the luminescence of such films doped with Tb and Er166 ions. (Author)

  17. Ion implantation technology and ion sources

    NASA Astrophysics Data System (ADS)

    Sugitani, Michiro

    2014-02-01

    Ion implantation (I/I) technology has been developed with a great economic success of industries of VLSI (Very Large-Scale Integrated circuit) devices. Due to its large flexibility and good controllability, the I/I technology has been assuming various challenging requirements of VLSI evolutions, especially in advanced evolutional characteristics of CMOSFET. Here, reviewing the demands of VLSI manufacturing to the I/I technology, required characteristics of ion implanters, and their ion sources are discussed.

  18. Apparatus for producing diamond-like carbon flakes

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A. (Inventor)

    1986-01-01

    A vacuum arc from a spot at the face of a graphite cathode to a graphite anode produces a beam of carbon ions and atoms. A carbon coating from this beam is deposited on an ion beam sputtered target to produce diamond-like carbon flakes. A graphite tube encloses the cathode, and electrical isolation is provided by an insulating sleeve. The tube forces the vacuum arc spot to be confined to the surface on the outermost end of the cathode. Without the tube the arc spot will wander to the side of the cathode. This spot movement results in low rates of carbon deposition, and the properties of the deposited flakes are more graphite-like than diamond-like.

  19. Thermal Behaviour of W+C Ion Implanted Ultra High Molecular Weight Polyethylene (UHMWPE)

    SciTech Connect

    Urkac, E. Sokullu; Oztarhan, A.; Tihminlioglu, F.; Ila, D.; Chhay, B.; Muntele, C.; Budak, S.; Oks, E.; Nikolaev, A.

    2009-03-10

    The aim of this work was to examine thermal behavior of the surface modified Ultra High Molecular Weight Poly Ethylene (UHMWPE ) in order to understand the effect of ion implantation on the properties of this polymer which is widely used especially for biomedical applications. UHMWPE samples were Tungsten and Carbon (W+C) hybrid ion implanted by using Metal Vapour Vacuum Arc (MEVVA) ion implantation technique with a fluence of 10 17 ions/cm2 and extraction voltage of 30 kV. Untreated and surface-treated samples were investigated by Rutherford Back Scattering (RBS) Analysis, Attenuated Total Reflectance Fourier Transform Infrared (ATR-FTIR) Spectrometry, Thermo Gravimetric Analysis (TGA) and Differential Scanning Calorimetry (DSC). This study has shown that ion implantation represents a powerful tool on modifying thermal properties of UHMWPE surfaces. This combination of properties can make implanted UHMWPE a preferred material for biomedical applications.

  20. Effect of ion implantation on the tribology of metal-on-metal hip prostheses.

    PubMed

    Bowsher, John G; Hussain, Azad; Williams, Paul; Nevelos, Jim; Shelton, Julia C

    2004-12-01

    Nitrogen ion implantation (which considerably hardens the surface of the bearing) may represent one possible method of reducing the wear of metal-on-metal (MOM) hip bearings. Currently there are no ion-implanted MOM bearings used clinically. Therefore a physiological hip simulator test was undertaken using standard test conditions, and the results compared to previous studies using the same methods. N2-ion implantation of high carbon cast Co-Cr-Mo-on-Co-Cr-Mo hip prostheses increased wear by 2-fold during the aggressive running-in phase compared to untreated bearing surfaces, plus showing no wear reductions during steady-state conditions. Although 2 specimens were considered in the current study, it would appear that ion implantation has no clinical benefit for MOM.

  1. Carbon Clustering and Diamond Nucleation in Fluorocarbon Plasmas

    SciTech Connect

    Takahashi, Kazuo; Ono, Kouichi

    2005-10-31

    The ultra-nano crystalline diamond can be produced at room temerature in fluorocarbon (C4F8) plasmas. In the gas phase, the various ionic species were detected by quadrupole mass analyzer. The species included chain molecules of CnFk (4 {<=} n {<=} 14, n - 2 {<=} k {<=} 2n + 2), carbon clusters of Cn (10 {<=} n {<=} 14, 22 {<=} n {<=} 31, 36 {<=} n {<=} 39), and their derivatives. The clusters of nanometer scale tend to be heated up to several hundred K by ion impacts even in room-temperature plasmas, resulting in the crystallization of diamond.

  2. Theoretical Compton profile of diamond, boron nitride and carbon nitride

    NASA Astrophysics Data System (ADS)

    Aguiar, Julio C.; Quevedo, Carlos R.; Gomez, José M.; Di Rocco, Héctor O.

    2017-09-01

    In the present study, we used the generalized gradient approximation method to determine the electron wave functions and theoretical Compton profiles of the following super-hard materials: diamond, boron nitride (h-BN), and carbon nitride in its two known phases: βC3N4 and gC3N4 . In the case of diamond and h-BN, we compared our theoretical results with available experimental data. In addition, we used the Compton profile results to determine cohesive energies and found acceptable agreement with previous experiments.

  3. Frictional and mechanical properties of diamond-like carbon-coated orthodontic brackets.

    PubMed

    Muguruma, Takeshi; Iijima, Masahiro; Brantley, William A; Nakagaki, Susumu; Endo, Kazuhiko; Mizoguchi, Itaru

    2013-04-01

    This study investigated the effects of a diamond-like carbon (DLC) coating on frictional and mechanical properties of orthodontic brackets. DLC films were deposited on stainless steel brackets using the plasma-based ion implantation/deposition (PBIID) method under two different atmospheric conditions. As-received metal brackets served as the control. Two sizes of stainless steel archwires, 0.018 inch diameter and 0.017 × 0.025 inch cross-section dimensions, were used for measuring static and kinetic friction by drawing the archwires through the bracket slots, using a mechanical testing machine (n = 10). The DLC-coated brackets were observed with a scanning electron microscope (SEM). Values of hardness and elastic modulus were obtained by nanoindentation testing (n = 10). Friction forces were compared by one-way analysis of variance and the Scheffé test. The hardness and elastic modulus of the brackets were compared using Kruskal-Wallis and Mann-Whitney U-tests. SEM photomicrographs showed DLC layers on the bracket surfaces with thickness of approximately 5-7 μm. DLC-coated brackets deposited under condition 2 showed significantly less static frictional force for the stainless steel wire with 0.017 × 0.025 inch cross-section dimensions than as-received brackets and DLC-coated brackets deposited under condition 1, although both DLC-coated brackets showed significantly less kinetic frictional force than as-received brackets. The hardness of the DLC layers was much higher than that of the as-received bracket surfaces. In conclusion, the surfaces of metal brackets can be successfully modified by the PBIID method to create a DLC layer, and the DLC-coating process significantly reduces frictional forces.

  4. Amorphous diamond: a high-pressure superhard carbon allotrope.

    PubMed

    Lin, Yu; Zhang, Li; Mao, Ho-kwang; Chow, Paul; Xiao, Yuming; Baldini, Maria; Shu, Jinfu; Mao, Wendy L

    2011-10-21

    Compressing glassy carbon above 40 GPa, we have observed a new carbon allotrope with a fully sp(3)-bonded amorphous structure and diamondlike strength. Synchrotron x-ray Raman spectroscopy revealed a continuous pressure-induced sp(2)-to-sp(3) bonding change, while x-ray diffraction confirmed the perseverance of noncrystallinity. The transition was reversible upon releasing pressure. Used as an indenter, the glassy carbon ball demonstrated exceptional strength by reaching 130 GPa with a confining pressure of 60 GPa. Such an extremely large stress difference of >70 GPa has never been observed in any material besides diamond, indicating the high hardness of this high-pressure carbon allotrope.

  5. Amorphous diamond: A high-pressure superhard carbon allotrope

    SciTech Connect

    Lin, Yu; Zhang, Li; Mao, Ho Kwang; Chow, Paul; Xiao, Yuming; Baldini, Maria; Shu, Jinfu; Mao, Wendy L.

    2011-01-01

    Compressing glassy carbon above 40 GPa, we have observed a new carbon allotrope with a fully sp³-bonded amorphous structure and diamondlike strength. Synchrotron x-ray Raman spectroscopy revealed a continuous pressure-induced sp²-to-sp³ bonding change, while x-ray diffraction confirmed the perseverance of noncrystallinity. The transition was reversible upon releasing pressure. Used as an indenter, the glassy carbon ball demonstrated exceptional strength by reaching 130 GPa with a confining pressure of 60 GPa. Such an extremely large stress difference of >70 GPa has never been observed in any material besides diamond, indicating the high hardness of this high-pressure carbon allotrope.

  6. Onion-like carbon from ultra-disperse diamond

    NASA Astrophysics Data System (ADS)

    Kuznetsov, Vladimir L.; Chuvilin, Andrey L.; Butenko, Yuri V.; Mal'kov, Igor Yu.; Titov, Vladimir M.

    1994-05-01

    A new material containing macroscopic quantities of onion-like carbon (OLC) particles is produced by heat treatment of ultra-disperse diamond (UDD) powder (2-6 nm). Annealing products (characterized by high-resolution electron microscopy) are presented by; (a) quasi-spherical particles with closed concentric graphite shells, (b) polyhedron particles with closed shells, (c) elongated particles with linked external graphite-like layers and closed quasi-spherical internal shells. The intermediates of UDD transformation have been registered. The structural transformation of UDD begins from the surface of the diamond particles towards a crystal bulk. The transformation rate of (111) diamond planes to graphite-like sheets is higher than that of other planes.

  7. Improving Sustainability of Ion Implant Modules

    NASA Astrophysics Data System (ADS)

    Mayer, Jim

    2011-01-01

    Semiconductor fabs have long been pressured to manage capital costs, reduce energy consumption and increasingly improve efforts to recycle and recover resources. Ion implant tools have been high-profile offenders on all three fronts. They draw such large volumes of air for heat dissipation and risk reduction that historically, they are the largest consumer of cleanroom air of any process tool—and develop energy usage and resource profiles to match. This paper presents a documented approach to reduce their energy consumption and dramatically downsize on-site facilities support for cleanroom air manufacture and abatement. The combination produces significant capital expenditure savings. The case entails applying SAGS Type 1 (sub-atmospheric gas systems) toxic gas packaging to enable engineering adaptations that deliver the energy savings and cost benefits without any reduction in environmental health and safety. The paper also summarizes benefits as they relate to reducing a fabs carbon emission footprint (and longer range advantages relative to potential cap and trade programs) with existing technology.

  8. Ion Implant Enabled 2x Lithography

    NASA Astrophysics Data System (ADS)

    Martin, Patrick M.; Godet, Ludovic; Cheung, Andrew; de Cock, Gael; Hatem, Chris

    2011-01-01

    Ion implantation has many applications in microelectronics beyond doping. The broad range of species available combined with the ability to precisely control dose, angle, and energy offers compelling advantages for use in precision material modification. The application to lithography has been reported elsewhere. Integrating ion implantation into the lithography process enables scaling the feature size requirements beyond the 15 nm node with a simplified double patterning sequence. In addition, ion implant may be used to remove line edge roughness, providing tremendous advantages to meet extreme lithography imaging requirements and provide additional device stability. We examine several species (e.g. Si, Ar, etc.) and the effect of energy and impact angle on several commercially available 193 nm immersion photoresists using a Varian VIISta® single wafer high current ion implanter. The treated photoresist will be evaluated for stability in an integrated double patterning application with ion implant used to freeze the primary image. We report on critical dimension impact, pattern integrity, optical property modification, and adhesion. We analyze the impact of line edge roughness improvement beyond the work of C. Struck including the power spectral distribution. TGA and FTIR Spectroscopy results for the implanted photoresist materials will also be included.

  9. Hydrogen migration in diamond-like carbon films

    NASA Astrophysics Data System (ADS)

    Vainonen, E.; Likonen, J.; Ahlgren, T.; Haussalo, P.; Keinonen, J.; Wu, C. H.

    1997-10-01

    Properties of physical vapor deposited diamondlike carbon (DLC) films and the migration of hydrogen in H+ and 4He+ ion implanted and hydrogen co-deposited DLC films have been studied. Measurements utilizing Rutherford backscattering spectrometry showed that the films studied have an average mass density of 2.6±0.1 g/cm3. The bonding ratio sp3/sp2 is typically 70% measured with the electron spectroscopy for chemical analysis technique. Impurities and their depth distributions were deduced from the particle induced x-ray emission and secondary ion mass spectrometry (SIMS) measurements. Distributions of implanted and co-deposited hydrogen were measured by the nuclear resonance reaction 1H(15N,αγ)12C and SIMS. It was found that annealing behavior of implanted H in DLC has a diffusion like character. The obtained diffusion coefficients resulted in the activation energy of 2.0±0.1 eV. It was observed that in H co-deposited DLC films the temperature of H release varied between 950 and 1070 °C depending on the H concentration.

  10. Method for producing fluorinated diamond-like carbon films

    DOEpatents

    Hakovirta, Marko J.; Nastasi, Michael A.; Lee, Deok-Hyung; He, Xiao-Ming

    2003-06-03

    Fluorinated, diamond-like carbon (F-DLC) films are produced by a pulsed, glow-discharge plasma immersion ion processing procedure. The pulsed, glow-discharge plasma was generated at a pressure of 1 Pa from an acetylene (C.sub.2 H.sub.2) and hexafluoroethane (C.sub.2 F.sub.6) gas mixture, and the fluorinated, diamond-like carbon films were deposited on silicon <100>substrates. The film hardness and wear resistance were found to be strongly dependent on the fluorine content incorporated into the coatings. The hardness of the F-DLC films was found to decrease considerably when the fluorine content in the coatings reached about 20%. The contact angle of water on the F-DLC coatings was found to increase with increasing film fluorine content and to saturate at a level characteristic of polytetrafluoroethylene.

  11. Stretchable diamond-like carbon microstructures for biomedical applications

    NASA Astrophysics Data System (ADS)

    Boehm, Ryan; Narayan, Roger J.; Aggarwal, Ravi; Monteiro-Riviere, Nancy A.; Lacour, Stéphanie P.

    2009-09-01

    Designing, fabricating, and evaluating stretchable electronics is a growing area of materials research. Electronic devices have traditionally been fabricated using rigid, inorganic substrates (e.g., silicon) with metallic components and interconnections. Conventional electronic devices may face limitations when placed in environments that are dominated by stretchable or three-dimensional structures, including those within the human body. This paper describes the use of pulsed laser deposition to create diamond-like carbon microstructures on polydimethylsiloxane. The viability of human epidermal keratinocyte cells on polydimethylsiloxane surfaces coated with arrays of diamond-like carbon islands was similar to that on unmodified polydimethylsiloxane surfaces, which are commonly used in medical devices. It is anticipated that stretchable electronic devices may be incorporated within novel medical devices and prostheses that interface with stretchable or three-dimensional structures in the human body.

  12. A Preliminary Evaluation of Diamond-Like Carbon Coated Polycarbonate

    DTIC Science & Technology

    1991-09-01

    moisture sensitive coatings provide good protection against laser induced damage. Proper adhesion between each coating layers needs to be estab- lished... coating that is being pursued is to increase the wear, abra- sion, and chemical resistance of the current ballistic/laser protective spectacles (BLPS...unique ion beam system. These diamond-like carbon coatings have considera’le potential as wear-resistant protective hardcoatings for transparent

  13. Comparative surface and nano-tribological characteristics of nanocomposite diamond-like carbon thin films doped by silver

    SciTech Connect

    Zhang, Han-Shen; Endrino, Jose L.; Anders, Andre

    2008-07-10

    In this study we have deposited silver-containing hydrogenated and hydrogen-free diamond-like carbon (DLC) nanocomposite thin films by plasma immersion ion implantation-deposition methods. The surface and nano-tribological characteristics were studied by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and nano-scratching experiments. The silver doping was found to have no measurable effect on sp2-sp3 hybridization of the hydrogenated DLC matrix and only a slight effect on the hydrogen-free DLC matrix. The surface topography was analyzed by surface imaging. High- and low-order roughness determined by AFM characterization was correlated to the DLC growth mechanism and revealed the smoothing effect of silver. The nano-tribological characteristics were explained in terms of friction mechanisms and mechanical properties in correlation to the surface characteristics. It was discovered that the adhesion friction was the dominant friction mechanism; the adhesion force between the scratching tip and DLC surface was decreased by hydrogenation and increased by silver doping.

  14. Silver nanoparticle-enriched diamond-like carbon implant modification as a mammalian cell compatible surface with antimicrobial properties.

    PubMed

    Gorzelanny, Christian; Kmeth, Ralf; Obermeier, Andreas; Bauer, Alexander T; Halter, Natalia; Kümpel, Katharina; Schneider, Matthias F; Wixforth, Achim; Gollwitzer, Hans; Burgkart, Rainer; Stritzker, Bernd; Schneider, Stefan W

    2016-03-09

    The implant-bone interface is the scene of competition between microorganisms and distinct types of tissue cells. In the past, various strategies have been followed to support bony integration and to prevent bacterial implant-associated infections. In the present study we investigated the biological properties of diamond-like carbon (DLC) surfaces containing silver nanoparticles. DLC is a promising material for the modification of medical implants providing high mechanical and chemical stability and a high degree of biocompatibility. DLC surface modifications with varying silver concentrations were generated on medical-grade titanium discs, using plasma immersion ion implantation-induced densification of silver nanoparticle-containing polyvinylpyrrolidone polymer solutions. Immersion of implants in aqueous liquids resulted in a rapid silver release reducing the growth of surface-bound and planktonic Staphylococcus aureus and Staphylococcus epidermidis. Due to the fast and transient release of silver ions from the modified implants, the surfaces became biocompatible, ensuring growth of mammalian cells. Human endothelial cells retained their cellular differentiation as indicated by the intracellular formation of Weibel-Palade bodies and a high responsiveness towards histamine. Our findings indicate that the integration of silver nanoparticles into DLC prevents bacterial colonization due to a fast initial release of silver ions, facilitating the growth of silver susceptible mammalian cells subsequently.

  15. Silver nanoparticle-enriched diamond-like carbon implant modification as a mammalian cell compatible surface with antimicrobial properties

    PubMed Central

    Gorzelanny, Christian; Kmeth, Ralf; Obermeier, Andreas; Bauer, Alexander T.; Halter, Natalia; Kümpel, Katharina; Schneider, Matthias F.; Wixforth, Achim; Gollwitzer, Hans; Burgkart, Rainer; Stritzker, Bernd; Schneider, Stefan W.

    2016-01-01

    The implant-bone interface is the scene of competition between microorganisms and distinct types of tissue cells. In the past, various strategies have been followed to support bony integration and to prevent bacterial implant-associated infections. In the present study we investigated the biological properties of diamond-like carbon (DLC) surfaces containing silver nanoparticles. DLC is a promising material for the modification of medical implants providing high mechanical and chemical stability and a high degree of biocompatibility. DLC surface modifications with varying silver concentrations were generated on medical-grade titanium discs, using plasma immersion ion implantation-induced densification of silver nanoparticle-containing polyvinylpyrrolidone polymer solutions. Immersion of implants in aqueous liquids resulted in a rapid silver release reducing the growth of surface-bound and planktonic Staphylococcus aureus and Staphylococcus epidermidis. Due to the fast and transient release of silver ions from the modified implants, the surfaces became biocompatible, ensuring growth of mammalian cells. Human endothelial cells retained their cellular differentiation as indicated by the intracellular formation of Weibel-Palade bodies and a high responsiveness towards histamine. Our findings indicate that the integration of silver nanoparticles into DLC prevents bacterial colonization due to a fast initial release of silver ions, facilitating the growth of silver susceptible mammalian cells subsequently. PMID:26955791

  16. Silver nanoparticle-enriched diamond-like carbon implant modification as a mammalian cell compatible surface with antimicrobial properties

    NASA Astrophysics Data System (ADS)

    Gorzelanny, Christian; Kmeth, Ralf; Obermeier, Andreas; Bauer, Alexander T.; Halter, Natalia; Kümpel, Katharina; Schneider, Matthias F.; Wixforth, Achim; Gollwitzer, Hans; Burgkart, Rainer; Stritzker, Bernd; Schneider, Stefan W.

    2016-03-01

    The implant-bone interface is the scene of competition between microorganisms and distinct types of tissue cells. In the past, various strategies have been followed to support bony integration and to prevent bacterial implant-associated infections. In the present study we investigated the biological properties of diamond-like carbon (DLC) surfaces containing silver nanoparticles. DLC is a promising material for the modification of medical implants providing high mechanical and chemical stability and a high degree of biocompatibility. DLC surface modifications with varying silver concentrations were generated on medical-grade titanium discs, using plasma immersion ion implantation-induced densification of silver nanoparticle-containing polyvinylpyrrolidone polymer solutions. Immersion of implants in aqueous liquids resulted in a rapid silver release reducing the growth of surface-bound and planktonic Staphylococcus aureus and Staphylococcus epidermidis. Due to the fast and transient release of silver ions from the modified implants, the surfaces became biocompatible, ensuring growth of mammalian cells. Human endothelial cells retained their cellular differentiation as indicated by the intracellular formation of Weibel-Palade bodies and a high responsiveness towards histamine. Our findings indicate that the integration of silver nanoparticles into DLC prevents bacterial colonization due to a fast initial release of silver ions, facilitating the growth of silver susceptible mammalian cells subsequently.

  17. Self-assembly of magnetic nanoclusters in diamond-like carbon by diffusion processes enhanced by collision cascades

    NASA Astrophysics Data System (ADS)

    Gupta, P.; Williams, G. V. M.; Hübner, R.; Vajandar, S.; Osipowicz, T.; Heinig, K.-H.; Becker, H.-W.; Markwitz, A.

    2017-04-01

    Mono-energetic cobalt implantation into hydrogenated diamond-like carbon at room temperature results in a bimodal distribution of implanted atoms without any thermal treatment. The ˜100 nm thin films were synthesised by mass selective ion beam deposition. The films were implanted with cobalt at an energy of 30 keV and an ion current density of ˜5 μA cm-2. Simulations suggest the implantation profile to be single Gaussian with a projected range of ˜37 nm. High resolution Rutherford backscattering measurements reveal that a bimodal distribution evolves from a single near-Gaussian distribution as the fluence increases from 1.2 to 7 × 1016 cm-2. Cross-sectional transmission electron microscopy further reveals that the implanted atoms cluster into nanoparticles. At high implantation doses, the nanoparticles assemble primarily in two bands: one near the surface with nanoparticle diameters of up to 5 nm and the other beyond the projected range with ˜2 nm nanoparticles. The bimodal distribution along with the nanoparticle formation is explained with diffusion enhanced by energy deposited during collision cascades, relaxation of thermal spikes, and defects formed during ion implantation. This unique distribution of magnetic nanoparticles with the bimodal size and range is of significant interest to magnetic semiconductor and sensor applications.

  18. Microwave plasma deposition of diamond like carbon coatings

    NASA Astrophysics Data System (ADS)

    Patil, D. S.; Ramachandran, K.; Venkataramani, N.; Pandey, M.; D'Cunha, R.

    2000-11-01

    he promising applications of the microwave plasmas have been appearing in the fields of chemical processes and semiconductor manufacturing. Applications include surface deposition of all types including diamond/diamond like carbon (DLC) coatings, etching of semiconductors, promotion of organic reactions, etching of polymers to improve bonding of the other materials etc. With a 2.45 GHz, 700 W, microwave induced plasma chemical vapor deposition (CVD) system set up in our laboratory we have deposited diamond like carbon coatings. The microwave plasma generation was effected using a wave guide single mode applicator. We have deposited DLC coatings on the substrates like stainless steel, Cu--Be, Cu and Si. The deposited coatings have been characterized by FTIR, Raman spectroscopy and ellipsometric techniques. The results show that we have achieved depositing ~ 95% sp3 bonded carbon in the films. The films are uniform with golden yellow color. The films are found to be excellent insulators. The ellipsometric measurements of optical constant on silicon substrates indicate that the films are transparent above 900 nm.

  19. Plasma etching of ion-implanted polysilicon

    SciTech Connect

    Karulkar, P.C.; Wirzbicki, M.A.

    1989-09-01

    Ion implantation is increasingly used to dope polysilicon gates to obtain lower resistivities and also to control the cumulative time-temperature cycling of VLSI wafers. Dry etching of polysilicon doped with phosphorus by ion implantation was studied using a parallel-plate etcher and two different etch chemistries sulfur haxafluoride-O{sub 2}-argon and SF6-CCl2F2-Ar. These two etch procedures were previously found to result in excellent etching of polysilicon which was doped with phosphorus by solid-source diffusion. Large differences in the cross-sectional profiles of ion-implanted polysilicon were found while using the two chemistries. SF6-dichlorodifluoromethane-Ar chemistry caused sharp notch-like undercuts, while the SF6-O2-Ar chemistry exhibited linewidth loss without any notching. Examples of the cross sections of ion-implanted polysilicon are presented along with a discussion of the possible mechanisms that cause the different cross-sectional profiles in the two etch chemistries. The notching is explained in terms of the variation in the dopant concentration and in the structure of ion-implanted polysilicon at different depths. The absence of notching in the cross section of ion-implanted polysilicon etched in the SF6-O2-Ar chemistry is explained by proposing that the interaction of oxygen in the SF6-O2-Ar chemistry with the etched surface makes the chemistry less sensitive to the dopant concentration in the etched material. Results of a simple experiment which support the proposed explanation are presented.

  20. A new phase transformation path from nanodiamond to new-diamond via an intermediate carbon onion

    NASA Astrophysics Data System (ADS)

    Xiao, J.; Li, J. L.; Liu, P.; Yang, G. W.

    2014-11-01

    The investigation of carbon allotropes such as graphite, diamond, fullerenes, nanotubes and carbon onions and mechanisms that underlie their mutual phase transformation is a long-standing problem of great fundamental importance. New diamond (n-diamond) is a novel metastable phase of carbon with a face-centered cubic structure; it is called ``new diamond'' because many reflections in its electron diffraction pattern are similar to those of diamond. However, producing n-diamond from raw carbon materials has so far been challenging due to n-diamond's higher formation energy than that of diamond. Here, we, for the first time, demonstrate a new phase transformation path from nanodiamond to n-diamond via an intermediate carbon onion in the unique process of laser ablation in water, and establish that water plays a crucial role in the formation of n-diamond. When a laser irradiates colloidal suspensions of nanodiamonds at ambient pressure and room temperature, nanodiamonds are first transformed into carbon onions serving as an intermediate phase, and sequentially carbon onions are transformed into n-diamonds driven by the laser-induced high temperature and high pressure from the carbon onion as a nanoscaled temperature and pressure cell upon the process of laser irradiation in a liquid. This phase transformation not only provides new insight into the physical mechanism involved, but also offers one suitable opportunity for breaking controllable pathways between n-diamond and carbon allotropes such as diamond and carbon onions.The investigation of carbon allotropes such as graphite, diamond, fullerenes, nanotubes and carbon onions and mechanisms that underlie their mutual phase transformation is a long-standing problem of great fundamental importance. New diamond (n-diamond) is a novel metastable phase of carbon with a face-centered cubic structure; it is called ``new diamond'' because many reflections in its electron diffraction pattern are similar to those of diamond

  1. Evaluation of Carbon Interstitial in C-ion Implanted ZnO Bulk Single Crystals by a Nuclear Reaction Analysis Study: An Origin of Low Resistivity

    SciTech Connect

    Izawa, Y.; Matsumoto, K.; Oga, T.; Kuriyama, K.; Kushida, K.; Kinomura, A.

    2011-12-23

    Nuclear reaction analysis (NRA) of carbon-implanted ZnO bulk single crystals (carbon concentration: 1.5x10{sup 20} cm{sup -3}), in conjunction with the channeling technique, using the {sup 12}C(d,p){sup 13}C and {sup 16}O(d,p){sup 17}O reactions shows the presence of the interstitial carbon (C{sub i}) and the occupancy of substitute sites of oxygen atoms. These results suggest that the variation in resistivity from the order of 10{sup 4} {Omega}cm(for un-implanted samples) to that of 10 {Omega}cm (for as-implanted ones) is attributed to the C{sub i} and/or its complex defects, which would act as a shallow donor in ZnO.

  2. Magnetic tunnel junctions utilizing diamond-like carbon tunnel barriers

    NASA Astrophysics Data System (ADS)

    Cadieu, F. J.; Chen, Li; Li, Biao

    2002-05-01

    We have devised a method whereby thin particulate-free diamond-like carbon films can be made with good adhesion onto even room-temperature substrates. The method employs a filtered ionized carbon beam created by the vacuum impact of a high-energy, approximately 1 J per pulse, 248 nm excimer laser onto a carbon target. The resultant deposition beam can be steered and deflected by magnetic and electric fields to paint a specific substrate area. An important aspect of this deposition method is that the resultant films are particulate free and formed only as the result of atomic species impact. The vast majority of magnetic tunnel junctions utilizing thin metallic magnetic films have employed a thin oxidized layer of aluminum to form the tunnel barrier. This has presented reproducibility problems because the indicated optimal barrier thickness is only approximately 13 Å thick. Magnetic tunnel junctions utilizing Co and permalloy films made by evaporation and sputtering have been fabricated with an intervening diamond-like carbon tunnel barrier. The diamond-like carbon thickness profile has been tapered so that seven junctions with different barrier thickness can be formed at once. Magnetoresistive (MR) measurements made between successive permalloy strip ends include contributions from two junctions and from the permalloy and Co strips that act as current leads to the junctions. Magnetic tunnel junctions with thicker carbon barriers exhibit MR effects that are dominated by that of the permalloy strips. Since these tunnel barriers are formed without the need for oxygen, complete tunnel junctions can be formed with all high-vacuum processing.

  3. In vivo evaluation of antithrombogenicity and surface analysis of ion-implanted silicone rubber

    NASA Astrophysics Data System (ADS)

    Suzuki, Y.; Kusakabe, M.; Iwaki, M.; Akiba, H.; Kusakabe, K.

    The chemical and physical structure of ion-implanted silicone rubbers has been studied in order to analyze their blood compatibility such as reduction of platelet accumulation owing to ion implantation. H +2, He +, C +, O +, O +2, N +, N +2, Ne +, Na +, Ar +, K +, and Kr + ion implantations were performed at an energy of 150 keV with fluences between 1 × 10 17 and 3 × 10 17 ions/cm 2 at room temperature. Results of FT-IR-ATR showed that ion implantation broke the original chemical bond to form new radicals such as OH, >C = O, SiH, and CH 2. The formation of these radicals depended on the ion species employed: >C = O formation by O + or O +2 implantation and formation of amines by N + or N +2 implantation. The results of Raman spectroscopy showed that ion implantation always produced a peak at near 1500 cm -1, although the intensity of this peak was dependent on the ion species. The light ions like H +2 and He + were more effective than heavy ions in producing this peak, and O +2 implantation was the most effective on producing amorphous carbon. These results indicated that >C = O and amorphous carbon, generated by O +2 implantation, may improve the antithrombogenicity. The antithrombogenicity was tested by the superior vena cava (SVC) indwelling method for two days in rats with in-111-tropolone-platelets, and by the inferior vena cava (IVC) indwelling method for periods of 1-4 weeks in dogs. Results of the SVC indwelling method showed that platelet accumulation on H +2 and O +2 implanted specimens decreased. In particular 1 × 10 17 O +2/cm 2 implantation caused both accumulation onto specimens and the SVC to decrease. Macroscopic views of the ion-implanted IVC specimens in dogs revealed little thrombus formation. It is concluded that ion implantation into silicone rod is a useful technique to improve its antithrombogenicity.

  4. Thermal stability studies of diamond-like carbon films

    SciTech Connect

    Parmeter, J.E.; Tallant, D.R.; Siegal, M.P.

    1994-04-01

    Thin films of amorphous carbon/hydrogen, also known as diamond-like carbon or DLC, are of interest as an economical alternative to diamond in a variety of coatings applications. We have investigated the thermal stability of DLC films deposited onto tungsten and aluminum substrates via plasma CVD of methane. These films contain approximately 40 atom % hydrogen, and based on Auger spectra the carbon in the films is estimated to be 60% sp{sup 3} hybridized and 40% sp{sup 2} hybridized. Thermal desorption, Auger, and Raman measurements all indicate that the DLC films are stable to 250--300C. Between 300 and 500C, thermal evolution of hydrogen from the films is accompanied by the conversion of carbon from sp{sup 3} to sp{sup 2} hybridization, and Raman spectra indicate the conversion of the overall film structure from DLC to micro-crystalline graphite or so called ``glassy`` carbon. These results suggest that DLC of this type is potentially useful for applications in which the temperature does not exceed 250C.

  5. Carbon structures and defect planes in diamond at high pressure

    NASA Astrophysics Data System (ADS)

    Botti, Silvana; Amsler, Maximilian; Flores-Livas, José A.; Ceria, Paul; Goedecker, Stefan; Marques, Miguel A. L.

    2013-07-01

    We performed a systematic structural search of high-pressure carbon allotropes for unit cells containing from 6 to 24 atoms using the minima hopping method. We discovered a series of new structures that are consistently lower in enthalpy than the ones previously reported. Most of these include (5+7)- or (4+8)-membered rings and can therefore be placed in the families proposed by H. Niu [Phys. Rev. Lett.PRLTAO0031-900710.1103/PhysRevLett.108.135501 108, 135501 (2012)]. However, we also found three more families with competitive enthalpies that contain (5+5+8)-membered rings, sp2 motives, or buckled hexagons. These structures are likely to play an important role in dislocation planes and structural defects of diamond and hexagonal diamond.

  6. Environmental effects on friction and wear of diamond and diamondlike carbon coatings

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Wu, Richard L. C.; Garscadden, Alan

    1992-01-01

    Reciprocating sliding friction experiments were conducted with a natural diamond flat, diamond film, and low and high density diamondlike carbon (DLC) films in contact with pin specimens of natural diamond and silicon nitride (Si3N4) both in humid air and dry air nitrogen. The results indicated that for natural diamond pin contacts the diamond films and the natural diamond flat were not susceptible to moisture but that moisture could increase both the coefficient of friction and the wear factors of the DLC films. The coefficients of friction and wear factors of the diamond films were generally similar to those of the natural diamond flat both in humid air and dry air nitrogen. In dry nitrogen the coefficients of friction of the high density DLC films in contact with pin specimens of both diamond and Si3N4 were generally low (about 0.02) and similar to those of the natural diamond flat and the diamond films. The wear factors of the materials in contact with both natural diamond and Si3N4 were generally in the ascending order of natural diamond flat, diamond film, high density DLC film, and low density DLC film. The moisture in the environment increased the coefficients of friction for Si3N4 pins in contact with all the materials. This increase in friction is due to the silicon oxide film produced on the surface of Si3N4 pins in humid air.

  7. Optimization of the ion implantation process

    NASA Astrophysics Data System (ADS)

    Maczka, D.; Latuszynski, A.; Kuduk, R.; Partyka, J.

    This work is devoted to the optimization of the ion implantation process in the implanter Unimas of the Institute of Physics, Maria Curie-Sklodowska University, Lublin. The results obtained during several years of operation allow us to determine the optimal work parameters of the device [1-3].

  8. Single atom devices by ion implantation.

    PubMed

    van Donkelaar, Jessica; Yang, C; Alves, A D C; McCallum, J C; Hougaard, C; Johnson, B C; Hudson, F E; Dzurak, A S; Morello, A; Spemann, D; Jamieson, D N

    2015-04-22

    To expand the capabilities of semiconductor devices for new functions exploiting the quantum states of single donors or other impurity atoms requires a deterministic fabrication method. Ion implantation is a standard tool of the semiconductor industry and we have developed pathways to deterministic ion implantation to address this challenge. Although ion straggling limits the precision with which atoms can be positioned, for single atom devices it is possible to use post-implantation techniques to locate favourably placed atoms in devices for control and readout. However, large-scale devices will require improved precision. We examine here how the method of ion beam induced charge, already demonstrated for the deterministic ion implantation of 14 keV P donor atoms in silicon, can be used to implant a non-Poisson distribution of ions in silicon. Further, we demonstrate the method can be developed to higher precision by the incorporation of new deterministic ion implantation strategies that employ on-chip detectors with internal charge gain. In a silicon device we show a pulse height spectrum for 14 keV P ion impact that shows an internal gain of 3 that has the potential of allowing deterministic implantation of sub-14 keV P ions with reduced straggling.

  9. Ion implantation of silicon nitride ball bearings

    SciTech Connect

    Williams, J.M.; Miner, J.R.

    1996-09-01

    Hypothesis for ion implantation effect was that stress concentrations reflected into the bulk due to topography such as polishing imperfections, texture in the race, or transferred material, might be reduced due to surface amorphization. 42 control samples were tested to an intended runout period of 60 h. Six ion implanted balls were tested to an extended period of 150 h. Accelerated testing was done in a V groove so that wear was on two narrow wear tracks. Rutherford backscattering, XRPS, profilometry, optical microscopy, nanoindentation hardness, and white light interferometry were used. The balls were implanted with 150-keV C ions at fluence 1.1x10{sup 17}/cm{sup 2}. The samples had preexisting surface defects (C-cracks), so the failure rate of the control group was unacceptable. None of the ion-implanted samples failed in 150 h of testing. Probability of randomly selecting 6 samples from the control group that would perform this well is about 5%, so there is good probability that ion implantation improved performance. Possible reasons are discussed. Wear tracks, microstructure, and impurity content were studied in possible relation to C-cracks.

  10. Lattice damage during ion implantation of semiconductors

    SciTech Connect

    Haynes, T.E.

    1993-08-01

    The temperature dependence of the lattice damage created during ion implantation of Si, Ge, Si-Ge alloys, and various III-V compounds is reviewed and interpreted in terms of a transition between two different damage formation mechanisms. Implications of this transition for control of damage, annealing, and electrical activation are discussed, particularly in GaAs.

  11. Nonlinear damage effect in graphene synthesis by C-cluster ion implantation

    SciTech Connect

    Zhang Rui; Zhang Zaodi; Wang Zesong; Wang Shixu; Wang Wei; Fu Dejun; Liu Jiarui

    2012-07-02

    We present few-layer graphene synthesis by negative carbon cluster ion implantation with C{sub 1}, C{sub 2}, and C{sub 4} at energies below 20 keV. The small C-clusters were produced by a source of negative ion by cesium sputtering with medium beam current. We show that the nonlinear effect in cluster-induced damage is favorable for graphene precipitation compared with monomer carbon ions. The nonlinear damage effect in cluster ion implantation shows positive impact on disorder reduction, film uniformity, and the surface smoothness in graphene synthesis.

  12. RBS and ERDA determinations of depth distributions of high-dose carbon ions implanted in silicon for silicon carbide synthesis study

    NASA Astrophysics Data System (ADS)

    Intarasiri, S.; Kamwanna, T.; Hallén, A.; Yu, L. D.; Janson, M. S.; Thongleum, C.; Possnert, G.; Singkarat, S.

    2006-08-01

    For ion beam synthesis of silicon carbide (SiC), a knowledge of the depth distribution of implanted carbon ions in silicon is crucial for successful development. Based on its simplicity and availability, we selected Rutherford backscattering spectrometry (RBS) as an analysis technique for this purpose. A self-developed computer program dedicated to extract depth profiles of lighter impurities in heavier matrix is established. For control, calculated results are compared with an other ion beam analysis (IBA) technique superior for studying lighter impurity in heavier substrate i.e. elastic recoil detection analysis (ERDA). The RBS was performed with a 1.7-MV Tandetron accelerator using He2+ as the probe ions. The ERDA was performed with a 5-MV Pelletron accelerator using I8+ as the probe ions. This work shows that the RBS-extracted data had no significant deviations from those of ERDA and simulations by SRIM2003 and SIIMPL computer codes. We also found that annealing at temperatures as high as 1000 °C had quite limited effect on the redistribution of carbon in silicon.

  13. Amorphous Diamond: A High-Pressure Superhard Carbon Allotrope

    SciTech Connect

    Lin, Yu; Zhang, Li; Mao, Ho-kwang; Chow, Paul; Xiao, Yuming; Baldini, Maria; Shu, Jinfu; Mao, Wendy L.

    2011-12-09

    Compressing glassy carbon above 40 GPa, we have observed a new carbon allotrope with a fully sp{sup 3}-bonded amorphous structure and diamondlike strength. Synchrotron x-ray Raman spectroscopy revealed a continuous pressure-induced sp{sup 2}-to-sp{sup 3} bonding change, while x-ray diffraction confirmed the perseverance of noncrystallinity. The transition was reversible upon releasing pressure. Used as an indenter, the glassy carbon ball demonstrated exceptional strength by reaching 130 GPa with a confining pressure of 60 GPa. Such an extremely large stress difference of >70 GPa has never been observed in any material besides diamond, indicating the high hardness of this high-pressure carbon allotrope.

  14. Wear-Resistant, Self-Lubricating Surfaces of Diamond Coatings

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1995-01-01

    In humid air and dry nitrogen, as-deposited, fine-grain diamond films and polished, coarse-grain diamond films have low steady-state coefficients of friction (less than 0.1) and low wear rates (less than or equal to 10(exp -6) mm(exp 3)/N-m). In an ultrahigh vacuum (10(exp -7) Pa), however, they have high steady-state coefficients of friction (greater than 0.6) and high wear rates (greater than or equal to 10(exp -4) mm(exp 3)/N-m). Therefore, the use of as-deposited, fine-grain and polished, coarse-grain diamond films as wear-resistant, self-lubricating coatings must be limited to normal air or gaseous environments such as dry nitrogen. On the other hand, carbon-ion-implanted, fine-grain diamond films and nitrogen-ion-implanted, coarse-grain diamond films have low steady-state coefficients of friction (less than 0.1) and low wear rates (less than or equal to 10(exp -6) mm(exp 3)/N-m) in all three environments. These films can be effectively used as wear-resistant, self-lubricating coatings in an ultrahigh vacuum as well as in normal air and dry nitrogen.

  15. Diamond fiber field emitters

    DOEpatents

    Blanchet-Fincher, Graciela B.; Coates, Don M.; Devlin, David J.; Eaton, David F.; Silzars, Aris K.; Valone, Steven M.

    1996-01-01

    A field emission electron emitter comprising an electrode formed of at least one diamond, diamond-like carbon or glassy carbon composite fiber, said composite fiber having a non-diamond core and a diamond, diamond-like carbon or glassy carbon coating on said non-diamond core, and electronic devices employing such a field emission electron emitter.

  16. Diamond nucleation on unscratched silicon substrates coated with various non-diamond carbon films by microwave plasma-enhanced chemical vapor deposition

    SciTech Connect

    Feng, Z. ); Brewer, M.A. ); Komvopoulos, K. ); Brown, I.G. ); Bogy, D.B. )

    1995-01-01

    The efficacy of various non-diamond carbon films as precursors for diamond nucleation on unscratched silicon substrates was investigated with a conventional microwave plasma-enhanced chemical vapor deposition system. Silicon substrates were partially coated with various carbonaceous substances such as clusters consisting of a mixture of C[sub 60] and C[sub 70], evaporated films of carbon and pure C[sub 70], and hard carbon produced by a vacuum arc deposition technique. For comparison, diamond nucleation on silicon substrates coated with submicrometer-sized diamond particles and uncoated smooth silicon surfaces was also examined under similar conditions. Except for evaporated carbon films, significantly higher diamond nucleation densities were obtained by subjecting the carbon-coated substrates to a low-temperature high-methane concentration hydrogen plasma treatment prior to diamond nucleation. The highest nucleation density ([similar to]3[times]10[sup 8] cm[sup [minus]2]) was obtained with hard carbon films. Scanning electron microscopy and Raman spectroscopy demonstrated that the diamond nucleation density increased with the film thickness and etching resistance. The higher diamond nucleation density obtained with the vacuum arc-deposited carbon films may be attributed to the inherent high etching resistance, presumably resulting from the high content of [ital sp][sup 3] atomic bonds. Microscopy observations suggested that diamond nucleation in the presence of non-diamond carbon deposits resulted from carbon layers generated under the pretreatment conditions.

  17. Method and apparatus for making diamond-like carbon films

    DOEpatents

    Pern, Fu-Jann; Touryan, Kenell J.; Panosyan, Zhozef Retevos; Gippius, Aleksey Alekseyevich

    2008-12-02

    Ion-assisted plasma enhanced deposition of diamond-like carbon (DLC) films on the surface of photovoltaic solar cells is accomplished with a method and apparatus for controlling ion energy. The quality of DLC layers is fine-tuned by a properly biased system of special electrodes and by exact control of the feed gas mixture compositions. Uniform (with degree of non-uniformity of optical parameters less than 5%) large area (more than 110 cm.sup.2) DLC films with optical parameters varied within the given range and with stability against harmful effects of the environment are achieved.

  18. Diamond-Like Carbon Nanorods and Fabrication Thereof

    NASA Technical Reports Server (NTRS)

    Varshney, Deepak (Inventor); Makarov, Vladimir (Inventor); Morell, Gerardo (Inventor); Saxena, Puja (Inventor); Weiner, Brad (Inventor)

    2017-01-01

    Novel sp. (sup 3) rich diamond-like carbon (DLC) nanorod films were fabricated by hot filament chemical vapor deposition technique. The results are indicative of a bottom-up self-assembly synthesis process, which results in a hierarchical structure that consists of microscale papillae comprising numerous nanorods. The papillae have diameters ranging from 2 to 4 microns and the nanorods have diameters in the 35-45 nanometer range. A growth mechanism based on the vapor liquid-solid mechanism is proposed that accounts for the morphological aspects in the micro- and nano-scales.

  19. Surface microanalytical studies of nitrogen ion-implanted steel

    NASA Astrophysics Data System (ADS)

    Dodd, Charles G.; Meeker, G. P.; Baumann, Scott M.; Norberg, James C.; Legg, Keith O.

    1985-03-01

    Five types of industrial steels, 1018, 52100, M-2, 440C, and 304 were ion implanted with nitrogen and subjected to surface microanalysis by three independent surface techniques: AES, RBS, and SIMS. The results provided understanding for earlier observations of the properties of various types of steel after nitrogen implantation. The steels that retained the most nitrogen and that have been reported to benefit the most in improved tribological properties from ion implantation were ferritic carbon and austenitic stainless steels, such as soft 1018 and 304, respectively. Heat-treated martensitic carbon steels such as 52100 and M-2 tool steel were found to retain the least nitrogen, and they have been reported to benefit less from nitrogen implantation; however, the interaction of transition metal carbides in M-2 with nitrogen has not been clarified. The data showed that 440C steel retained as much nitrogen as 1018 and 304, but treatment benefits may be limited to improvements in properties related to toughness and impact resistance.

  20. Nitrogen-incorporated ultrananocrystalline diamond and multi-layer-graphene-like hybrid carbon films

    NASA Astrophysics Data System (ADS)

    Tzeng, Yonhua; Yeh, Shoupu; Fang, Wei Cheng; Chu, Yuehchieh

    2014-03-01

    Nitrogen-incorporated ultrananocrystalline diamond (N-UNCD) and multi-layer-graphene-like hybrid carbon films have been synthesized by microwave plasma enhanced chemical vapor deposition (MPECVD) on oxidized silicon which is pre-seeded with diamond nanoparticles. MPECVD of N-UNCD on nanodiamond seeds produces a base layer, from which carbon structures nucleate and grow perpendicularly to form standing carbon platelets. High-resolution transmission electron microscopy and Raman scattering measurements reveal that these carbon platelets are comprised of ultrananocrystalline diamond embedded in multilayer-graphene-like carbon structures. The hybrid carbon films are of low electrical resistivity. UNCD grains in the N-UNCD base layer and the hybrid carbon platelets serve as high-density diamond nuclei for the deposition of an electrically insulating UNCD film on it. Biocompatible carbon-based heaters made of low-resistivity hybrid carbon heaters encapsulated by insulating UNCD for possible electrosurgical applications have been demonstrated.

  1. Radiation-Induced Nucleation of Diamond from Amorphous Carbon: Effect of Hydrogen.

    PubMed

    Sun, Yanqiu; Kvashnin, Alexander G; Sorokin, Pavel B; Yakobson, Boris I; Billups, W E

    2014-06-05

    Electron irradiation of anthracite functionalized by dodecyl groups leads to recrystallization of the carbon network into diamonds. The diamonds range in size from ∼2 to ∼10 nm and exhibit {111} spacing of 2.1 Å. A bulk process consistent with bias-enhanced nucleation is proposed in which the dodecyl group provides hydrogen during electron irradiation. Recrystallization into diamond occurs in the hydrogenated graphitic subsurface layers. Unfunctionalized anthracite could not be converted into diamond during electron irradiation. The dependence of the phase transition pressure on cluster size was estimated, and it was found that diamond particles with a radius up to 20 nm could be formed.

  2. Tribological properties and surface structures of ion implanted 9Cr18Mo stainless steels

    NASA Astrophysics Data System (ADS)

    Fengbin, Liu; Guohao, Fu; Yan, Cui; Qiguo, Sun; Min, Qu; Yi, Sun

    2013-07-01

    The polished quenched-and-tempered 9Cr18Mo steels were implanted with N ions and Ti ions respectively at a fluence of 2 × 1017 ions/cm2. The mechanical properties of the samples were investigated by using nanoindenter and tribometer. The results showed that the ion implantations would improve the nanohardness and tribological property, especially N ion implantation. The surface analysis of the implanted samples was carried out by using XRD, XPS and AES. It indicated that the surface exhibits graded layers after ion implantation. For N ion implantation, the surface about 20 nm thickness is mainly composed of supersaturated interstitial N solid solution, oxynitrides, CrxCy phase and metal nitrides. In the subsurface region, the metal nitrides dominate and the other phases disappear. For Ti ion implantation, the surface of about 20 nm thickness is mainly composed of titanium oxides and carbon amorphous phase, the interstitial solid solution of Ti in Fe is abundant in the subsurface region. The surface components and structures have significant contributions to the improved mechanical properties.

  3. Investigating the functionality of diamond-like carbon films on an artificial heart diaphragm.

    PubMed

    Ohgoe, Yasuharu; Takada, Satoshi; Hirakuri, Kenji K; Tsuchimoto, Katsuya; Homma, Akihiko; Miyamatsu, Toshinobu; Saitou, Tomoyuki; Friedbacher, Gernot; Tatsumi, Eisuke; Taenaka, Yoshiyuki; Fukui, Yasuhiro

    2003-01-01

    In this study, the authors used diamond-like carbon film to coat the ellipsoidal diaphragm (polyurethane elastomer) of artificial hearts. The purpose of such coatings is to prevent the penetration of hydraulic silicone oil and blood through the diaphragm. To attach diamond-like carbon film uniformly on the diaphragm, the authors developed a special electrode. In estimating the uniformity of the diamond-like carbon film, the thickness was measured using a scanning electron microscope, and the characteristics of the diamond-like carbon film was investigated using infrared spectroscopy, Ar-laser Raman spectrophotometer, and x-ray photoelectron spectrometer. Also, to estimate the penetration of silicone oil through the diaphragm, in vitro testing was operated by alternating the pressure of silicone oil for 20 days. The authors were able to successfully attach uniform deposition of diamond-like carbon film on the ellipsoidal diaphragm. In this in vitro test, diamond-like carbon film was proven to have good stability. The amount of silicone oil penetration was improved by one-third using the diamond-like carbon film coating compared with an uncoated diaphragm. It is expected that through the use of the diamond-like carbon film, the dynamic compatibility of an artificial heart diaphragm will increase.

  4. Field emission from hybrid diamond-like carbon and carbon nanotube composite structures.

    PubMed

    Zanin, H; May, P W; Hamanaka, M H M O; Corat, E J

    2013-12-11

    A thin diamond-like carbon (DLC) film was deposited onto a densely packed "forest" of vertically aligned multiwalled carbon nanotubes (VACNT). DLC deposition caused the tips of the CNTs to clump together to form a microstructured surface. Field-emission tests of this new composite material show the typical low threshold voltages for carbon nanotube structures (2 V μm(-1)) but with greatly increased emission current, better stability, and longer lifetime.

  5. Phase diagram with a region of liquid carbon-diamond metastable states

    NASA Astrophysics Data System (ADS)

    Basharin, A. Yu.; Dozhdikov, V. S.; Kirillin, A. V.; Turchaninov, M. A.; Fokin, L. R.

    2010-06-01

    Metastable cubic diamond has been found in the structure of solid carbon obtained by quenching of a liquid phase at a pressure (0.012 GPa) much lower than that corresponding to the existence of stable diamond. It is suggested that this metastable diamond is formed as a result of the recalescence of supercooled liquid carbon to the melting point ( T dm) of metastable diamond due to a lower energy barrier for the formation of diamond as compared to that of graphite. A comparison between the calculated Gibbs energies of metastable phases provided an estimate of T dm = 4160 ± 50 K. For the first time, metastable continuations of the curve of diamond melting at pressures of up to 0.012 GPa are constructed on the phase diagrams of carbon (according to various published data) using analytical curves described by a two-parametric Simon equation.

  6. Ion-implantation studies on perpendicular media.

    PubMed

    Gaur, Nikita; Maurer, Siegfried L; Nunes, Ronald W; Piramanayagam, S N; Bhatia, C S

    2011-03-01

    Magnetic and structural properties of ion implanted perpendicular recording media have been investigated. Effects of 12C+ ion implantation with the doses of 2 x 10(11), 10(13), 10(14) and 10(16) ions/cm2 in the magnetic recording layer of conventional granular and continuous perpendicular media are reported in this paper. Implantation with the highest fluence of 10(16) ions/cm2 resulted in change of the magnetization reversal mechanism, thereby reducing coercivity. In continuous media the implanted ions cause increase in pinning defects, leading to an increase in coercivity. In contrast, high dose was found to cause similar change in the crystallographic properties of both the granular and continuous media.

  7. Development of ion implanted gallium arsenide transistors

    NASA Technical Reports Server (NTRS)

    Hunsperger, R.; Baron, R.

    1972-01-01

    Techniques were developed for creating bipolar microwave transistors in GaAs by ion implantation doping. The electrical properties of doped layers produced by the implantation of the light ions Be, Mg, and S were studied. Be, Mg, and S are suitable for forming the relatively deep base-collector junction at low ion energies. The electrical characteristics of ion-implanted diodes of both the mesa and planar types were determined. Some n-p-n planar transistor structures were fabricated by implantation of Mg to form the base regions and Si to form the emitters. These devices were found to have reasonably good base-collector and emitter-base junctions, but the current gain beta was small. The low was attributable to radiative recombination in the base region, which was extremely wide.

  8. Ion sources for ion implantation technology (invited)

    NASA Astrophysics Data System (ADS)

    Sakai, Shigeki; Hamamoto, Nariaki; Inouchi, Yutaka; Umisedo, Sei; Miyamoto, Naoki

    2014-02-01

    Ion sources for ion implantation are introduced. The technique is applied not only to large scale integration (LSI) devices but also to flat panel display. For LSI fabrication, ion source scheduled maintenance cycle is most important. For CMOS image sensor devices, metal contamination at implanted wafer is most important. On the other hand, to fabricate miniaturized devices, cluster ion implantation has been proposed to make shallow PN junction. While for power devices such as silicon carbide, aluminum ion is required. For doping processes of LCD fabrication, a large ion source is required. The extraction area is about 150 cm × 10 cm, and the beam uniformity is important as well as the total target beam current.

  9. Ion sources for ion implantation technology (invited)

    SciTech Connect

    Sakai, Shigeki Hamamoto, Nariaki; Inouchi, Yutaka; Umisedo, Sei; Miyamoto, Naoki

    2014-02-15

    Ion sources for ion implantation are introduced. The technique is applied not only to large scale integration (LSI) devices but also to flat panel display. For LSI fabrication, ion source scheduled maintenance cycle is most important. For CMOS image sensor devices, metal contamination at implanted wafer is most important. On the other hand, to fabricate miniaturized devices, cluster ion implantation has been proposed to make shallow PN junction. While for power devices such as silicon carbide, aluminum ion is required. For doping processes of LCD fabrication, a large ion source is required. The extraction area is about 150 cm × 10 cm, and the beam uniformity is important as well as the total target beam current.

  10. Pulsed source ion implantation apparatus and method

    DOEpatents

    Leung, Ka-Ngo

    1996-01-01

    A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted.

  11. Controlled ion implant damage profile for etching

    DOEpatents

    Arnold, Jr., George W.; Ashby, Carol I. H.; Brannon, Paul J.

    1990-01-01

    A process for etching a material such as LiNbO.sub.3 by implanting ions having a plurality of different kinetic energies in an area to be etched, and then contacting the ion implanted area with an etchant. The various energies of the ions are selected to produce implant damage substantially uniformly throughout the entire depth of the zone to be etched, thus tailoring the vertical profile of the damaged zone.

  12. Laser annealing of ion implanted silicon

    SciTech Connect

    White, C.W.; Appleton, B.R.; Wilson, S.R.

    1980-01-01

    Pulsed laser annealing of ion implanted silicon leads to the formation of supersaturated alloys by nonequilibrium crystal growth processes at the interface occurring during liquid phase epitaxial regrowth. The interfacial distribution coefficients from the melt (k') and the maximum substitutional solubilities (C/sub s//sup max/) are far greater than equilibrium values. Both K' and C/sub s//sup max/ are functions of growth velocity. Mechanisms limiting substitutional solubilities are discussed. 5 figures, 2 tables.

  13. Pulsed source ion implantation apparatus and method

    DOEpatents

    Leung, K.N.

    1996-09-24

    A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted. 16 figs.

  14. Low Energy Sputter Yields for Diamond, Carbon-Carbon Composite, and Molybdenum Subject to Xenon Ion Nombardment

    NASA Technical Reports Server (NTRS)

    Blandino, J.; Goodwin, D.; Garner, C.

    1999-01-01

    Sputter yields have been measured for polycrystalline diamond, single crystal diamond, a carbon-carbon composite, and molybdenum subject to bombardment with xenon. The tests were performed using a 3 cm Kaufman ion source to produce incident ions with energy in the range of 150 - 750 eV and profilometry based technique to measure the amount of sputtered material.

  15. Low Energy Sputter Yields for Diamond, Carbon-Carbon Composite, and Molybdenum Subject to Xenon Ion Nombardment

    NASA Technical Reports Server (NTRS)

    Blandino, J.; Goodwin, D.; Garner, C.

    1999-01-01

    Sputter yields have been measured for polycrystalline diamond, single crystal diamond, a carbon-carbon composite, and molybdenum subject to bombardment with xenon. The tests were performed using a 3 cm Kaufman ion source to produce incident ions with energy in the range of 150 - 750 eV and profilometry based technique to measure the amount of sputtered material.

  16. Application of ion implantation in tooling industry

    NASA Astrophysics Data System (ADS)

    Straede, Christen A.

    1996-06-01

    In papers published during the last half of the 1980s it is often stated that the application of ion beams to non-semiconductor purposes seems ready for full-scale industrial exploitation. However, progress with respect to commercialisation of ion implantation has been slower than predicted, although the process is quite clearly building up niche markets, especially in the tooling industry. It is the main purpose of this paper to discuss the implementation of the process in the tooling market, and to describe strategies used to ensure its success. The basic idea has been to find niches where ion implantation out-performs other processes both technically and in prices. For instance, it has been clearly realised that one should avoid competing with physical vapour deposition or other coating techniques in market areas where they perform excellently, and instead find niches where the advantages of the ion implantation technique can be fully utilised. The paper will present typical case stories in order to illustrate market niches where the technique has its greatest successes and potential.

  17. Diamond-like carbon coatings for orthopedic applications: Tribological behaviors of vacuum arc diamond-like carbon-coated titanium alloy against medical-grade ultra-high molecular weight polyethylene

    NASA Astrophysics Data System (ADS)

    Xu, Tianzong

    An extensive and detailed investigation of tribological behaviors of vacuum arc carbon coated Ti6Al4V against medical grade ultra high molecular weight polyethylene were conducted in this work in order to investigate the potential use of diamond-like carbon coatings for orthopedic applications. Further, the gas plasma sterilization and surface modification technique were evaluated as an alternative to the currently used gamma-radiation technique which has previously shown degradation effects on the mechanical properties of the UHMWPE. In addition, an emerging polymer surface modification technique using high-energy ion-implantation is explored to modify the surface of the UHMWPE for improved wear performance. The experiments were performed using a standard pin-on-disk wear tester under both dry and distilled water lubricated condition. The evolution of friction and wear processes are interpreted in the context of in situ recorded coefficient of friction and microscopic images of worn surfaces. Sliding wear tests demonstrated the existence of two distinct friction and wear regimes which comprise physically different dominant mechanisms: an adhesive and abrasive mechanism activated early in the run-in stage, followed by fatigue processes which developed later microscopically in the (quasi) steady-state sliding stage. The effects of surface roughness, distilled water lubricant, coating structure, polymer sterilization and surface modification on the tribological behaviors are presented and discussed in light of these results. Explanations based on theories of sliding contact stress fields, temperature profiles, as well as lubrication and coating fracture mechanics are presented to discuss and support the experimental results. It is revealed that, largely depending on material structures and surface roughness of both articulating components, significantly improved friction and wear performance can be achieved by optimal design of their process

  18. Atmospheric Plasma Deposition of Diamond-like Carbon Coatings

    SciTech Connect

    Ladwig, Angela

    2008-01-23

    There is great demand for thin functional coatings in the semiconductor, optics, electronics, medical, automotive and aerospace industries [1-13]. As fabricated components become smaller and more complex, the properties of the materials’ surface take on greater importance. Thin coatings play a key role in tailoring surfaces to give them the desired hardness, wear resistance, chemical inertness, and electrical characteristics. Diamond-like carbon (DLC) coatings possess an array of desirable properties, including outstanding abrasion and wear resistance, chemical inertness, hardness, a low coefficient of friction and exceptionally high dielectric strength [14-22]. Diamond-like carbon is considered to be an amorphous material, containing a mixture of sp2 and sp3 bonded carbon. Based on the percentage of sp3 carbon and the hydrogen content, four different types of DLC coatings have been identified: tetrahedral carbon (ta-C), hydrogenated amorphous carbon (a-C:H) hard, a-C:H soft, and hydrogenated tetrahedral carbon (ta-C:H) [20,24,25]. Possessing the highest hardness of 80 GPa, ta-C possesses an sp3 carbon content of 80 to 88u%, and no appreciable hydrogen content whereas a-C:H soft possesses a hardness of less than 10 GPa, contains an sp3 carbon content of 60% and a hydrogen content between 30 to 50%. Methods used to deposit DLC coatings include ion beam deposition, cathodic arc spray, pulsed laser ablation, argon ion sputtering, and plasma-enhanced chemical vapor deposition [73-83]. Researchers contend that several advantages exist when depositing DLC coatings in a low-pressure environment. For example, ion beam processes are widely utilized since the ion bombardment is thought to promote denser sp3-bonded carbon networks. Other processes, such as sputtering, are better suited for coating large parts [29,30,44]. However, the deposition of DLC in a vacuum system has several disadvantages, including high equipment cost and restrictions on the size and shape of

  19. Carbon and nitrogen in Type 2 supernova diamonds

    NASA Technical Reports Server (NTRS)

    Clayton, Donald D.; Eleid, Mounib; Brown, Lawrence E.

    1993-01-01

    Abundant diamonds found in meteorites seem either to have condensed within supernova interiors during their expansions and coolings or to have been present around those explosions. Either alternative allows implantation of Xe-HL prior to interstellar mixing. A puzzling feature is the near normalcy of the carbon isotopes, considering that the only C-rich matter, the He-burning shell, is pure C-12 in that region. That last fact has caused many to associate supernova carbon with C-12 carbon, so that its SUNOCONS have been anticipated as very C-12-rich. We show that this expectation is misleading because the C-13-rich regions of Type 2's have been largely overlooked in this thinking. We here follow the idea that the diamonds nucleated in the C-12-rich He shell, the only C-rich site for nucleation, but then attached C-13-rich carbon during turbulent encounters with overlying C-13-rich matter. That is, the initial diamonds continued to grow during the same collisional encounters that cause the Xe-HL implantation. Instead of interacting with the small carbon mass having 13/12 = 0.2 in the upper He zone, however, we have calculated the remnants of the initial H-burning core, which left behind C-13-rich matter as it receded during core hydrogen burning. Howard et al. described why the velocity mixing would be essential to understanding the implantation of both the Xe-H and Xe-L components. Velocity mixing is now known to occur from the X-ray and gamma-ray light curves of supernova 1987A. Using the stellar evolution code developed at Goettingen, we calculated at Clemson the evolution of a grid of massive stars up to the beginning of core He burning. We paid attention to all H-burning reactions throughout the star, to the treatment of both convection and semiconvection, and to the recession of the outer boundary of the convective H-burning core as the star expands toward a larger redder state. This program was to generate a careful map of the CNO isotope distribution as He

  20. Carbon and nitrogen in Type 2 supernova diamonds

    NASA Technical Reports Server (NTRS)

    Clayton, Donald D.; Eleid, Mounib; Brown, Lawrence E.

    1993-01-01

    Abundant diamonds found in meteorites seem either to have condensed within supernova interiors during their expansions and coolings or to have been present around those explosions. Either alternative allows implantation of Xe-HL prior to interstellar mixing. A puzzling feature is the near normalcy of the carbon isotopes, considering that the only C-rich matter, the He-burning shell, is pure C-12 in that region. That last fact has caused many to associate supernova carbon with C-12 carbon, so that its SUNOCONS have been anticipated as very C-12-rich. We show that this expectation is misleading because the C-13-rich regions of Type 2's have been largely overlooked in this thinking. We here follow the idea that the diamonds nucleated in the C-12-rich He shell, the only C-rich site for nucleation, but then attached C-13-rich carbon during turbulent encounters with overlying C-13-rich matter. That is, the initial diamonds continued to grow during the same collisional encounters that cause the Xe-HL implantation. Instead of interacting with the small carbon mass having 13/12 = 0.2 in the upper He zone, however, we have calculated the remnants of the initial H-burning core, which left behind C-13-rich matter as it receded during core hydrogen burning. Howard et al. described why the velocity mixing would be essential to understanding the implantation of both the Xe-H and Xe-L components. Velocity mixing is now known to occur from the X-ray and gamma-ray light curves of supernova 1987A. Using the stellar evolution code developed at Goettingen, we calculated at Clemson the evolution of a grid of massive stars up to the beginning of core He burning. We paid attention to all H-burning reactions throughout the star, to the treatment of both convection and semiconvection, and to the recession of the outer boundary of the convective H-burning core as the star expands toward a larger redder state. This program was to generate a careful map of the CNO isotope distribution as He

  1. Theoretical study on the adsorption of armchair carbon nanotubes on the hydrogenated surface of diamond

    NASA Astrophysics Data System (ADS)

    Sque, Stephen J.; Jones, Robert; Öberg, Sven; Briddon, Patrick R.

    2006-09-01

    First-principles density-functional theory has been used to investigate the interaction of (metallic) (7,7) carbon nanotubes with the hydrogenated (001) surface of diamond. There is no evidence for a significant chemical interaction between the nanotubes and the diamond surface, although an appreciable binding energy is obtained. The corresponding electronic band structures are indicative of moderate electron transfer from the diamond substrate to the nanotube, which would in practice leave behind a mobile layer of holes. These results suggest that carbon nanotubes may, like buckminsterfullerene, act as suitable p-type transfer dopants for diamond.

  2. Research Update: Direct conversion of amorphous carbon into diamond at ambient pressures and temperatures in air

    SciTech Connect

    Narayan, Jagdish Bhaumik, Anagh

    2015-10-01

    We report on fundamental discovery of conversion of amorphous carbon into diamond by irradiating amorphous carbon films with nanosecond lasers at room-temperature in air at atmospheric pressure. We can create diamond in the form of nanodiamond (size range <100 nm) and microdiamond (>100 nm). Nanosecond laser pulses are used to melt amorphous diamondlike carbon and create a highly undercooled state, from which various forms of diamond can be formed upon cooling. The quenching from the super undercooled state results in nucleation of nanodiamond. It is found that microdiamonds grow out of highly undercooled state of carbon, with nanodiamond acting as seed crystals.

  3. Molecular ion sources for low energy semiconductor ion implantation (invited).

    PubMed

    Hershcovitch, A; Gushenets, V I; Seleznev, D N; Bugaev, A S; Dugin, S; Oks, E M; Kulevoy, T V; Alexeyenko, O; Kozlov, A; Kropachev, G N; Kuibeda, R P; Minaev, S; Vizir, A; Yushkov, G Yu

    2016-02-01

    Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively. Carborane, which is the most stable molecular boron ion leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C4H12B10O4) was synthesized and utilized in the ITEP Bernas ion source resulting in large carborane ion output, without carbon residue. Pure gaseous processes are desired to enable rapid switch among ion species. Molecular phosphorous was generated by introducing phosphine in dissociators via 4PH3 = P4 + 6H2; generated molecular phosphorous in a pure gaseous process was then injected into the HCEI Calutron-Bernas ion source, from which P4(+) ion beams were extracted. Results from devices and some additional concepts are described.

  4. Molecular ion sources for low energy semiconductor ion implantation (invited)

    NASA Astrophysics Data System (ADS)

    Hershcovitch, A.; Gushenets, V. I.; Seleznev, D. N.; Bugaev, A. S.; Dugin, S.; Oks, E. M.; Kulevoy, T. V.; Alexeyenko, O.; Kozlov, A.; Kropachev, G. N.; Kuibeda, R. P.; Minaev, S.; Vizir, A.; Yushkov, G. Yu.

    2016-02-01

    Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively. Carborane, which is the most stable molecular boron ion leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C4H12B10O4) was synthesized and utilized in the ITEP Bernas ion source resulting in large carborane ion output, without carbon residue. Pure gaseous processes are desired to enable rapid switch among ion species. Molecular phosphorous was generated by introducing phosphine in dissociators via 4PH3 = P4 + 6H2; generated molecular phosphorous in a pure gaseous process was then injected into the HCEI Calutron-Bernas ion source, from which P4+ ion beams were extracted. Results from devices and some additional concepts are described.

  5. Low substrate temperature deposition of diamond coatings derived from glassy carbon

    DOEpatents

    Holcombe, C.E. Jr.; Seals, R.D.

    1995-09-26

    A process is disclosed for depositing a diamond coating on a substrate at temperatures less than about 550 C. A powder mixture of glassy carbon and diamond particles is passed through a high velocity oxy-flame apparatus whereupon the powders are heated prior to impingement at high velocity against the substrate. The powder mixture contains between 5 and 50 powder volume percent of the diamond particles, and preferably between 5 and 15 powder volume percent. The particles have a size from about 5 to about 100 micrometers, with the diamond particles being about 5 to about 30 micrometers. The flame of the apparatus provides a velocity of about 350 to about 1000 meters per second, with the result that upon impingement upon the substrate, the glassy carbon is phase transformed to diamond as coaxed by the diamond content of the powder mixture. 2 figs.

  6. Low substrate temperature deposition of diamond coatings derived from glassy carbon

    DOEpatents

    Holcombe, Jr., Cressie E.; Seals, Roland D.

    1995-01-01

    A process for depositing a diamond coating on a substrate at temperatures less than about 550.degree. C. A powder mixture of glassy carbon and diamond particles is passed through a high velocity oxy-flame apparatus whereupon the powders are heated prior to impingement at high velocity against the substrate. The powder mixture contains between 5 and 50 powder volume percent of the diamond particles, and preferably between 5 and 15 powder volume percent. The particles have a size from about 5 to about 100 micrometers, with the diamond particles being about 5 to about 30 micrometers. The flame of the apparatus provides a velocity of about 350 to about 1000 meters per second, with the result that upon impingement upon the substrate, the glassy carbon is phase transformed to diamond as coaxed by the diamond content of the powder mixture.

  7. Diamond dissolution and the production of methane and other carbon-bearing species in hydrothermal diamond-anvil cells

    USGS Publications Warehouse

    Chou, I.-Ming; Anderson, Alan J.

    2009-01-01

    Raman analysis of the vapor phase formed after heating pure water to near critical (355-374 ??C) temperatures in a hydrothermal diamond-anvil cell (HDAC) reveals the synthesis of abiogenic methane. This unexpected result demonstrates the chemical reactivity of diamond at relatively low temperatures. The rate of methane production from the reaction between water and diamond increases with increasing temperature and is enhanced by the presence of a metal gasket (Re, Ir, or Inconel) which is compressed between the diamond anvils to seal the aqueous sample. The minimum detection limit for methane using Raman spectroscopy was determined to be ca. 0.047 MPa, indicating that more than 1.4 nanograms (or 8.6 ?? 10-11 mol) of methane were produced in the HDAC at 355 ??C and 30 MPa over a period of ten minutes. At temperatures of 650 ??C and greater, hydrogen and carbon dioxide were detected in addition to methane. The production of abiogenic methane, observed in all HDAC experiments where a gasket was used, necessitates a reexamination of the assumed chemical systems and intensive parameters reported in previous hydrothermal investigations employing diamonds. The results also demonstrate the need to minimize or eliminate the production of methane and other carbonic species in experiments by containing the sample within a HDAC without using a metal gasket.

  8. Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond

    SciTech Connect

    Altukhov, A. A.; Vikharev, A. L.; Gorbachev, A. M.; Dukhnovsky, M. P.; Zemlyakov, V. E.; Ziablyuk, K. N.; Mitenkin, A. V.; Muchnikov, A. B. Radishev, D. B.; Ratnikova, A. K.; Fedorov, Yu. Yu.

    2011-03-15

    The results of studies of single-crystal diamond layers with orientation (100) grown on substrates of IIa-type natural diamond by chemical-vapor deposition and of semiconductor diamond obtained subsequently by doping by implantation of boron ions are reported. Optimal conditions of postimplantation annealing of diamond that provide the hole mobility of 1150 cm{sup 2} V{sup -1} s{sup -1} (the highest mobility obtained so far for semiconductor diamond after ion implantation) are given.

  9. Low voltage electrodeposition of diamond like carbon (DLC)

    NASA Astrophysics Data System (ADS)

    Sreejith, K.; Nuwad, J.; Pillai, C. G. S.

    2005-10-01

    Attempt has been made to deposit diamond like carbon (DLC) films from ethanol through electrodeposition at low voltages (80-300 V) at 1 mm interelectrode separation. The films were characterized by atomic force microscopy (AFM), Scanning electron microscopy (SEM), Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy and Auger electron Spectroscopy (AES). AFM investigations revealed the grain sizes are of tens of nanometers. The films were found to be continuous, smooth and close packed. Presence of peaks at 2958, 2929 and 2869 cm -1 in FTIR spectrum indicates the bonding states to be of predominantly sp 3 type (C-H). Raman spectroscopy analysis revealed two broad bands at ˜1350 and ˜1570 cm -1. The downshift of the G-band of graphite is indicative of presence of DLC. Analysis of the Raman spectra for the samples revealed an improvement in the film quality with increase in the voltage. Micro Raman investigations indicate the formation of diamond phase at the deposition potential of 80 V. The sp 2 contents the films calculated from Auger electron spectra were calculated and were found to be 31, 19 and 7.8% for the samples prepared at 80, 150 and 300 V, respectively. A tentative mechanism for the formation of DLC has been proposed. These results indicate the possibility of deposition of DLC at low voltage.

  10. Formation of conducting nanochannels in diamond-like carbon films

    NASA Astrophysics Data System (ADS)

    Evtukh, A.; Litovchenko, V.; Semenenko, M.; Yilmazoglu, O.; Mutamba, K.; Hartnagel, H. L.; Pavlidis, D.

    2006-09-01

    A sharp increase of the emission current at high electric fields and a decrease of the threshold voltage after pre-breakdown conditioning of diamond-like carbon (DLC) films have been measured. This effect was observed for DLC-coated silicon tips and GaAs wedges. During electron field emission (EFE) at high electric fields the energy barriers caused by an sp3 phase between sp2 inclusions can be broken, resulting in the formation of conducting nanochannels between the semiconductor-DLC interface and the surface of the DLC film. At high current densities and the resulting local heating, the diamond-like sp3 phase transforms into a conducting graphite-like sp2 phase. As a result an electrical conducting nanostructured channel is formed in the DLC film. The diameter of the conducting nanochannel was estimated from the reduced threshold voltage after pre-breakdown conditioning to be in the range of 5-25 nm. The presence of this nanochannel in an insulating matrix leads to a local enhancement of the electric field and a reduced threshold voltage for EFE. Based on the observed features an efficient method of conducting nanochannel matrix formation in flat DLC films for improved EFE efficiency is proposed. It mainly uses a silicon tip array as an upper electrode in contact with the DLC film. The formation of nanochannels starts at the interface between the tips and the DLC film. This opens new possibilities of aligned and high-density conducting channel formation.

  11. Development of diamond powder filled carbon fibre pipes

    NASA Astrophysics Data System (ADS)

    Glitza, K. W.; Mättig, P.; Sanny, B.; Schmitt, U.; Siegfanz, A.; Srinivasan, M.

    2017-08-01

    For the High Luminosity (HL) phase of the Large Hadron Collider (LHC) pixel detectors have to meet new and unprecedented challenges for electronics, read-out band widths and also mechanical support and cooling. Traditionally the mechanical support structures (staves) are built from carbon based materials, embedding a metallic cooling pipe through which the cooling liquid, typically CO2, is circulated. In this paper the development and use of a carbon pipe is discussed. Compared to the metallic pipes carbon pipes have potentially advantages like lightness, low radio activation and no CTE mismatch. Their disadvantage of lower transversal thermal conductivity can be mitigated by filling the fabric with diamond powder (DP). The paper reports about the production process of carbon pipes with DP filled epoxy and cyanate ester resin. It discusses that this process leads with reasonable efficiency to pipes that meet the requirements of pressure stability up to 200 bars and leak tightness of 10-6mbarLs-1 for use in HL-LHC staves. The remaining problems and an outlook on potential improvements and further work are presented.

  12. Ion implantation in crystalline and amorphous materials

    NASA Astrophysics Data System (ADS)

    Tasch, Al F.

    1998-05-01

    Ion implantation continues to be the selective doping technique of choice in silicon integrated circuit (IC) manufacturing, and its applications continue to grow in doping, damage gettering, and process simplification. However, in both technology and manufacturing equipment development there is a rapidly increasing need to understand in detail the dependence of implanted impurity profiles and implant-induced damage profiles in silicon on all key implant parameters. These reasons include largely reduced thermal budgets in IC processing, heavy emphasis on control of equipment and process costs, and the need for rigid manufacturing control. Towards this end, accurate, comprehensive, and computationally efficient models for ion implanted profiles (impurity and damage) in silicon are indispensable. These models greatly facilitate more timely technology development and implementation in manufacturing, improved manufacturing process control; and the development of new ion implantation tools can be executed more efficiently. This talk describes ion implant models and simulators developed in the ion implant modeling research/education project at the University of Texas at Austin. Physically based models for ion implantation into single-crystal Si have been developed for the commonly used implant species B, BF(2), As, P, and Si for the most commonly used implant energy ranges. These models have explicit dependence on the major implant parameters (energy, dose, tilt angle and rotation angle). In addition, the models have been extensively verified by the vast amount of experimental data which has been obtained in the experimental part of this project. The models have been extended down to ultra-low implant energies (<2keV) by removing two of the three major limitations of the binary collision approximation (bca) at ultra-low energies and overcoming part of the third limitation. At very high energies where electronic stopping dominates the energy loss, an electronic stopping

  13. Ion Implanted Gaas Integrated Optics Fabrication Technology

    NASA Astrophysics Data System (ADS)

    Mentzer, M. A.; Hunsperger, R. G.; Bartko, J.; Zavada, J. M.; Jenkinson, H. A.

    1985-01-01

    Ion implantation of semiconductor materials is a fabrication technique that offers a number of distinct advantages for the formation of guided-wave components and microelectronic devices. Implanted damage and dopants produce optical and electronic changes that can be utilized for sensing and signal processing applications. GaAs is a very attractive material for optical fabrication since it is transparent out to the far infrared. It can be used to fabricate optical waveguides, directional couplers, EO modulators, and detectors, as well as other guided wave structures. The presence of free carriers in GaAs lowers the refractive index from that of the pure semiconductor material. This depression of the refractive index is primarily due to the negative contribution of the free carrier plasma to the dielectric constant of the semiconductor. Bombardment of n-type GaAs by protons creates damage sites near the surface of the crystal structure where free carriers are trapped. This "free carrier compensated" region in the GaAs has a higher refractive index than the bulk region. If the compensated region is sufficiently thick and has a refractive index which is sufficiently larger than that of the bulk n-type region, an optical waveguide is formed. In this paper, a description of ion implantation techniques for the fabrication of both planar and channel integrated optical structures in GaAs is presented, and is related to the selection of ion species, implant energy and fluence, and to the physical processes involved. Lithographic technology and masking techniques are discussed for achieving a particular desired implant profile. Finally, the results of a set of ion implantation experiments are presented.

  14. Nanoindentation measurements on modified diamond-like carbon thin films

    NASA Astrophysics Data System (ADS)

    Dwivedi, Neeraj; Kumar, Sushil; Malik, Hitendra K.

    2011-09-01

    In the present study, we explored the effect of metallic interlayers (Cu and Ti) and indentation loads (5-20 mN) on the mechanical properties of plasma produced diamond-like carbon (DLC) thin films. Also a comparison has been made for mechanical properties of these films with pure DLC and nitrogen incorporated DLC films. Introduction of N in DLC led to a drastic decrease in residual stress (S) from 1.8 to 0.7 GPa, but with expenses of hardness (H) and other mechanical properties. In contrast, addition of Cu and Ti interlayers between substrate Si and DLC, results in significant decrease in S with little enhancement of hardness and other mechanical properties. Among various DLC films, maximum hardness 30.8 GPa is observed in Ti-DLC film. Besides hardness and elastic modulus, various other mechanical parameters have also been estimated using load versus displacement curves.

  15. Optically transparent, scratch-resistant, diamond-like carbon coatings

    DOEpatents

    He, Xiao-Ming; Lee, Deok-Hyung; Nastasi, Michael A.; Walter, Kevin C.; Tuszewski, Michel G.

    2003-06-03

    A plasma-based method for the deposition of diamond-like carbon (DLC) coatings is described. The process uses a radio-frequency inductively coupled discharge to generate a plasma at relatively low gas pressures. The deposition process is environmentally friendly and scaleable to large areas, and components that have geometrically complicated surfaces can be processed. The method has been used to deposit adherent 100-400 nm thick DLC coatings on metals, glass, and polymers. These coatings are between three and four times harder than steel and are therefore scratch resistant, and transparent to visible light. Boron and silicon doping of the DLC coatings have produced coatings having improved optical properties and lower coating stress levels, but with slightly lower hardness.

  16. Photochemically modified diamond-like carbon surfaces for neural interfaces.

    PubMed

    Hopper, A P; Dugan, J M; Gill, A A; Regan, E M; Haycock, J W; Kelly, S; May, P W; Claeyssens, F

    2016-01-01

    Diamond-like carbon (DLC) was modified using a UV functionalization method to introduce surface-bound amine and aldehyde groups. The functionalization process rendered the DLC more hydrophilic and significantly increased the viability of neurons seeded to the surface. The amine functionalized DLC promoted adhesion of neurons and fostered neurite outgrowth to a degree indistinguishable from positive control substrates (glass coated with poly-L-lysine). The aldehyde-functionalized surfaces performed comparably to the amine functionalized surfaces and both additionally supported the adhesion and growth of primary rat Schwann cells. DLC has many properties that are desirable in biomaterials. With the UV functionalization method demonstrated here it may be possible to harness these properties for the development of implantable devices to interface with the nervous system.

  17. Porous boron-doped diamond/carbon nanotube electrodes.

    PubMed

    Zanin, H; May, P W; Fermin, D J; Plana, D; Vieira, S M C; Milne, W I; Corat, E J

    2014-01-22

    Nanostructuring boron-doped diamond (BDD) films increases their sensitivity and performance when used as electrodes in electrochemical environments. We have developed a method to produce such nanostructured, porous electrodes by depositing BDD thin film onto a densely packed "forest" of vertically aligned multiwalled carbon nanotubes (CNTs). The CNTs had previously been exposed to a suspension of nanodiamond in methanol causing them to clump together into "teepee" or "honeycomb" structures. These nanostructured CNT/BDD composite electrodes have been extensively characterized by scanning electron microscopy, Raman spectroscopy, cyclic voltammetry, and electrochemical impedance spectroscopy. Not only do these electrodes possess the excellent, well-known characteristics associated with BDD (large potential window, chemical inertness, low background levels), but also they have electroactive areas and double-layer capacitance values ∼450 times greater than those for the equivalent flat BDD electrodes.

  18. Laser Patterning of Diamond. Part II. Surface Nondiamond Carbon Formation and its Removal

    SciTech Connect

    Smedley, J.; Jaye, C; Bohon, J; Rao, T; Fischer, D

    2009-01-01

    As diamond becomes more prevalent for electronic and research applications, methods of patterning diamond will be required. One such method, laser ablation, has been investigated in a related work. We report on the formation of surface nondiamond carbon during laser ablation of both polycrystalline and single-crystal synthetic diamonds. Near edge x-ray absorption fine structure spectroscopy was used to confirm that the nondiamond carbon layer formed during the ablation was amorphous, and Fourier transform infrared absorption spectroscopy (FTIR) was used to estimate the thickness of this layer to be {approx} 60 nm. Ozone cleaning was used to remove the nondiamond carbon layer.

  19. Electrical conditioning of diamond-like carbon films for the formation of coated field emission cathodes

    NASA Astrophysics Data System (ADS)

    Semenenko, M.; Okrepka, G.; Yilmazoglu, O.; Hartnagel, H. L.; Pavlidis, D.

    2010-11-01

    Diamond-like carbon (DLC) films deposited on different substrates by plasma enhanced chemical vapour deposition were investigated. Bonding states and film quality were characterized by FT-IR spectroscopy. The influence of the power of plasma and the deposition time on the sp2/sp3 ratio as well as the concentration of CHn bonds was studied. The influence of sp2/sp3 ratio on the formation process of conducting channels in diamond-like carbon films as a result of electrical breakdown was determined. Reproducible increase of diamond-like carbon film conductivity, with initial sp2/sp3 ratio larger than 0.16, was observed after electrical breakdown.

  20. Damage accumulation in ceramics during ion implantation

    SciTech Connect

    McHargue, C.J.; Farlow, G.C.; Begun, G.M.; Williams, J.M.; White, C.W.; Appleton, B.R.; Sklad, P.S.; Angelini, P.

    1985-01-01

    The damage structures of ..cap alpha..-Al/sub 2/O/sub 3/ and ..cap alpha..-SiC were examined as functions of ion implantation parameters using Rutherford backscattering-channeling, analytical electron microscopy, and Raman spectroscopy. Low temperatures or high fluences of cations favor formation of the amorphous state. At 300/sup 0/K, mass of the bombarding species has only a small effect on residual damage, but certain ion species appear to stabilize the damage microstructure and increase the rate of approach to the amorphous state. The type of chemical bonding present in the host lattice is an important factor in determining the residual damage state.

  1. Radiation hardened PMOS process with ion implanted threshold adjust

    NASA Technical Reports Server (NTRS)

    Jhabvala, M.

    1979-01-01

    By including specific process modifications the effect of ion implantation on radiation hardness can be minimized and radiation hard ion implanted MOS circuits can be fabricated. The experimental procedure followed was to examine key processing steps (with respect to radiation hardness) on ion-implanted individual PMOS transistors. The individual transistors were evaluated by continuously monitoring the threshold voltage as the transistors were being irradiated. By comparing runs it was possible to deduce what is considered a radiation hard ion implanted process. Tests with a complex LSI PMOS IC processor chip containing over 2000 transistors and resistors were also conducted

  2. Proceedings of the Seventh Applied Diamond Conference/Third Frontier Carbon Technology Joint Conference (ADC/FCT 2003). Supplement 1

    NASA Technical Reports Server (NTRS)

    Murakawa, M. (Editor); Miyoshi, K. (Editor); Koga, Y. (Editor); Schaefer, L. (Editor); Tzeng, Y. (Editor)

    2003-01-01

    This document contains 2 reports which were presented at the Seventh Applied Diamond Conference/Third Frontier Carbon Technology Joint Conference. The topics discuss the formation of C-N nanofibers as well as the characterization of diamond thin films.

  3. Relationship between carbon isotope composition and crystal morphology of coated and polycrystalline diamonds

    NASA Astrophysics Data System (ADS)

    Janson, G. F.; Muehlenbachs, K.; Stachel, T.

    2009-12-01

    The carbon isotope composition of diamond coats from Diavik Mine, Canada was measured by secondary ion mass spectrometry (SIMS). In most cases, carbon isotope ratio increases outwards from approximately -8.5 to approximately -6.5‰. Although it has not been widely noted in the literature due to sparse data coverage, this trend is consistent with measurements by other researchers at other sampling localities and therefore represents a unique insight into fluid evolution during the formation of diamond coat. We model the outwards increase in carbon isotope ratio by Rayleigh fractionation during growth of diamond coat in a closed system from an oxidized, carbon supersaturated fluid with a mantle-like carbon isotope signature. The carbon may have been exsolved as a volatile-rich fluid from upwelling kimberlite magma at depths greater than 120 km. The fluid either encountered preexisting diamond ‘seed’ crystals which served as nuclei for the coats or, in the absence of such seeds, precipitated opaque cuboid crystals. Reduction of oxidized carbon to diamond would be driven by the reduced character of the depleted lithosphere (Haggerty and Tompkins, 1983). Several polycrystalline diamonds were also studied by SIMS. These are homogeneous with respect to δ13C and therefore show no isotopic evidence of fluid evolution during their growth. The degree of supersaturation of a fluid commonly determines the crystal habit of minerals precipitated from the fluid. In the case of diamonds, dendritic coat is interpreted as a product of conditions intermediate between the low degree carbon supersaturation that produces polyhedral and hopper morphologies, and the very high supersaturation responsible for the growth of polycrystalline diamond. During closed system growth, precipitation of diamond depletes the fluid reservoir of carbon, resulting in isotopic profiles consistent with Rayleigh fractionation. This depletion necessarily reduces the chemical potential between fluid and

  4. Diamond Nucleation from Amorphous Carbon and Graphite with COH Fluids: an in Situ High Pressure and Temperature Laser-Heated Diamond Anvil Cell Experimental Study

    NASA Astrophysics Data System (ADS)

    Zhang, J.; Prakapenka, V.; Kubo, A.; Kavner, A.; Green, H. W.; Dobrzhinetskaya, L. F.

    2007-12-01

    Microdiamonds from orogenic belts contain nanometer size fluid inclusions suggesting diamond formation from supercritical COH fluids. Previous studies have shown that diamonds synthesized from high pressure and temperature experiments with supercritical COH fluids are characterized by skeletal morphology and solid oxide inclusions. However, mechanism and kinetics of graphite/carbon-to-diamond transformation promoted by COH fluids at high pressure and high temperature conditions are not well understood. Here we report in situ observations of diamond nucleation from COH fluids in laser-heated diamond anvil cell. Our experimental starting materials were amorphous carbon (impurity < 2ppm) and graphite (99.9% pure). Oxalic acid dihydrate (COOH)2·2H2O) was added to amorphous carbon and glucose (C6H12O6) was added to both amorphous carbon and graphite. The organic compounds (3 wt.%) provide CO2- and CH4-rich fluid environments respectively during their breakdown at high pressure and temperature. The mixtures were kept at temperature of 1400-1700 °C and pressure of 8-10 GPa for 10-30 minutes. Experiments show that only nanocrystals of diamond were nucleated from amorphous carbon in CO2-rich fluid environment. The fastest rate of diamond nucleation and growth of ~15 micron size crystals was found in the mixture of amorphous carbon with glucose (CH4-rich environment), whereas only nanocrystalline nuclei were produced in the mixture of graphite with glucose. We have also established that under anhydrous conditions, no diamond nucleation occurred in pure graphite, and only nanocrystals of diamond were observed in the amorphous carbon starting material at temperatures 1700-1900 °C. Our results revealed that the kinetics of diamond nucleation depend on the ¡°precursor¡±: diamond nucleates and grows faster from amorphous carbon than from graphite in the presence of COH fluid; in our anhydrous experiments diamond nucleates only from amorphous carbon. These results

  5. PLEPS study of ions implanted RAFM steels

    NASA Astrophysics Data System (ADS)

    Sojak, S.; Slugeň, V.; Egger, W.; Ravelli, L.; Petriska, M.; Veterníková, J.; Stacho, M.; Sabelová, V.

    2014-04-01

    Current nuclear power plants (NPP) require radiation, heat and mechanical resistance of their structural materials with the ability to stay operational during NPP planned lifetime. Radiation damage much higher, than in the current NPP, is expected in new generations of nuclear power plants, such as Generation IV and fusion reactors. Investigation of perspective structural materials for new generations of nuclear power plants is among others focused on study of reduced activation ferritic/martensitic (RAFM) steels. These steels have good characteristics as reduced activation, good resistance to volume swelling, good radiation, and heat resistance. Our experiments were focused on the study of microstructural changes of binary Fe-Cr alloys with different chromium content after irradiation, experimentally simulated by ion implantations. Fe-Cr alloys were examined, by Pulsed Low Energy Positron System (PLEPS) at FRM II reactor in Garching (Munich), after helium ion implantations at the dose of 0.1 C/cm2. The investigation was focused on the chromium effect and the radiation defects resistivity. In particular, the vacancy type defects (monovacancies, vacancy clusters) have been studied. Based on our previous results achieved by conventional lifetime technique, the decrease of the defects size with increasing content of chromium is expected also for PLEPS measurements.

  6. Diagnostic characterization of ablation plasma ion implantation

    NASA Astrophysics Data System (ADS)

    Qi, B.; Gilgenbach, R. M.; Jones, M. C.; Johnston, M. D.; Lau, Y. Y.; Wang, L. M.; Lian, J.; Doll, G. L.; Lazarides, A.

    2003-06-01

    Experiments are reported in which two configurations for ablation-plasma-ion-implantation (APII) are characterized by diagnostics and compared. The first configuration oriented the target parallel to the deposition substrate. This orientation yielded ion-beam-assisted deposition of thin films. A delay (>5 μs) between laser and high voltage was necessary for this geometry to avoid arcing between negatively biased substrate and target. The second experimental configuration oriented the target perpendicular to the deposition substrate, reducing arcing, even for zero/negative delay between the laser and the high voltage pulse. This orientation also reduced neutral atom, ballistic deposition on the substrate resulting in a pure ion implantation mode. Ion density measurements were made by resonant laser diagnostics and Langmuir probes, yielding total ion populations in the range of 1014. Implanted ion doses were estimated by electrical diagnostics, and materials analysis, including x-ray energy dispersive spectroscopy and x-ray photoelectron spectroscopy, yielding implanted doses in the range 1012 ions/cm2 per pulse. This yields an APII efficiency of order 10% for implantation of laser ablated ions. Scaling of ion dose with voltage agrees well with a theory assuming the Child-Langmuir law and that the ion current at the sheath edge is due to the uncovering of the ions by the movement of the sheath. Thin film analysis showed excellent adhesion with smoother films for an accelerating voltage of -3.2 kV; higher voltages (-7.7 kV) roughened the film.

  7. Ion implantations of oxide dispersion strengthened steels

    NASA Astrophysics Data System (ADS)

    Sojak, S.; Simeg Veternikova, J.; Slugen, V.; Petriska, M.; Stacho, M.

    2015-12-01

    This paper is focused on a study of radiation damage and thermal stability of high chromium oxide dispersion strengthened steel MA 956 (20% Cr), which belongs to the most perspective structural materials for the newest generation of nuclear reactors - Generation IV. The radiation damage was simulated by the implantation of hydrogen ions up to the depth of about 5 μm, which was performed at a linear accelerator owned by Slovak University of Technology. The ODS steel MA 956 was available for study in as-received state after different thermal treatments as well as in ions implanted state. Energy of the hydrogen ions chosen for the implantation was 800 keV and the implantation fluence of 6.24 × 1017 ions/cm2. The investigated specimens were measured by non-destructive technique Positron Annihilation Lifetime Spectroscopy in order to study the defect behavior after different thermal treatments in the as-received state and after the hydrogen ions implantation. Although, different resistance to defect production was observed in individual specimens of MA 956 during the irradiation, all implanted specimens contain larger defects than the ones in as-received state.

  8. Electron field emission from composite electrodes of carbon nanotubes-boron-doped diamond and carbon felts

    NASA Astrophysics Data System (ADS)

    Rosolen, J. Mauricio; Tronto, Simone; Marchesin, Marcel S.; Almeida, Erica C.; Ferreira, Neidenei G.; Patrick Poá, C. H.; Silva, S. Ravi P.

    2006-02-01

    The electron field emission of carbon nanotube (CNT)/boron-doped diamond (BDD)/carbon felt electrodes (CNT/BDD/felt) have been investigated. The composite electrode was initially prepared with the growth of BDD on carbon felt and the subsequent growth of CNT by chemical decomposition of methanol. The composite electrodes were characterised using scanning electron microscopy and transmission electron microscopy. For the CNT/BDD/felt samples, the electron field emission was observed at macroscopic fields as low as 1.1Vμm-1. The emission current versus time plot shows significant potential for future field emission applications.

  9. Heteroepitaxial diamond growth

    NASA Astrophysics Data System (ADS)

    Markunas, R. J.; Rudder, R. A.; Posthill, J. B.; Thomas, R. E.; Hudson, G.

    1994-02-01

    Technical highlights from 1993 include the following: Growth Chemistries: A clear correlation was observed between ionization potential of feedstock gasses and critical power necessary for inductive coupling of the plasma and consequent diamond growth. Substrate preparation and epitaxial film quality: Ion-implantation of C and O has been coupled with either electrochemical etching or acid cleaning for surface preparation prior to homoepitaxial growth. Reactor modifications: Key improvements were made to the RF reactor to allow for long growths to consolidate substrates. Liquid mass flow controllers were added to precisely meter both the water and selected alcohol. Ion-implantation and lift off: Lift off of diamond platelets has been achieved with two processes. Ion-implantation of either C or O followed by annealing and implantation of either C or O followed by water based electrolysis. Diamond characterization: Development of novel detect characterization techniques: (1) Etch delineation of defects by exposure to propane torch flame. (2) Hydrogen plasma exposure to enhance secondary electron emission and provide non-topographical defect contrast. Acetylene will react at room temperature with sites created by partial desorption of oxygen from the (100) diamond surface. Thermal desorption measurements give an apparent activation energy for CO desorption from diamond (100) of 45 kcal/mol. Quantum chemical calculations indicate an activation energy of 38 kcal/mol for CO desorption. Ab initio calculations on (100) surfaces indicates that oxygen adsorbed at one dimer site has an effect on the dimerization of an adjacent site.

  10. Non-catalytic synthesis of diamond from amorphous carbon at high static pressure

    NASA Astrophysics Data System (ADS)

    Higashi, K.; Onodera, A.

    1986-05-01

    Amorphous carbon prepared from furfuryl alcohol resin was studied under static high pressure above 10 GPa without planned addition of catalyst. Diamond can be formed at temperatures lower than required for the catalytic process.

  11. Noble gas studies in vapor-growth diamonds: Comparison with shock-produced diamonds and the origin of diamonds in ureilites

    SciTech Connect

    Matsuda, Junichi; Fukunaga, Kazuya; Ito, Keisuke )

    1991-07-01

    The authors synthesized vapor-trowth diamonds by two kinds of Chemical Vapor Deposition (CVD) using microwave (MWCVD) and hot filament (HFCVD) ionization of gases, and examined elemental abundances and isotopic compositions of the noble gases trapped in the diamonds. It is remarkable that strong differences existed in the noble gas concentrations in the two kinds of CVD diamonds: large amounts of noble gases were trapped in the MWCVD diamonds, but not in the HFCVD diamonds. The heavy noble gases (Ar to Xe) in the MWCVD diamonds were highly fractionated compared with those in the ambient atmosphere, and are in good agreement with the calculated fractionation patterns for plasma at an electron temperature of 7,000-9,000 K. These results strongly suggest that the trapping mechanism of noble gases in CVD diamonds is ion implantation during diamond growth. The degrees of fractionation of heavy noble gases were also in good agreement with those in ureilites. The vapor-growth hypothesis is discussed in comparison with the impact-shock hypothesis as a better model for the origin of diamonds in ureilites. The diamond (and graphite, amorphous carbon, too) may have been deposited on early condensates such as Re, Ir, W, etc. This model explains the chemical features of vein material in ureilites; the refractory siderophile elements are enriched in carbon and noble gases and low in normal siderophiles. The vapor-growth model is also compatible with the oxygen isotopic data of ureilites which suggests that nebular processes are primarily responsible for the composition of ureilites.

  12. Diamond growth from oxidized carbon sources beneath the Northern Slave Craton, Canada: A δ 13C-N study of eclogite-hosted diamonds from the Jericho kimberlite

    NASA Astrophysics Data System (ADS)

    Smart, Katie A.; Chacko, Thomas; Stachel, Thomas; Muehlenbachs, Karlis; Stern, Richard A.; Heaman, Larry M.

    2011-10-01

    Diamonds from high- and low-MgO groups of eclogite xenoliths from the Jericho kimberlite, Slave Craton, Canada were analyzed for carbon isotope compositions and nitrogen contents. Diamonds extracted from the two groups show remarkably different nitrogen abundances and δ 13C values. While diamonds from high-MgO eclogites have low nitrogen contents (5-82 ppm) and extremely low δ 13C values clustering at ˜-40‰, diamonds from the low-MgO eclogites have high nitrogen contents (>1200 ppm) and δ 13C values from -3.5‰ to -5.3‰. Coupled cathodoluminescence (CL) imaging and SIMS analysis of the Jericho diamonds provides insight into diamond growth processes. Diamonds from the high-MgO eclogites display little CL structure and generally have constant δ 13C values and nitrogen contents. Some of these diamonds have secondary rims with increasing δ 13C values from -40‰ to ˜-34‰, which suggests secondary diamond growth occurred from an oxidized growth medium. The extreme negative δ 13C values of the high-MgO eclogite diamonds cannot be produced by Rayleigh isotopic fractionation of average mantle-derived carbon (-5‰) or carbon derived from typical organic matter (˜-25‰). However, excursions in δ 13C values to -60‰ are known in the organic sedimentary record at ca. 2.7 and 2.0 Ga, such that diamonds from the high-MgO eclogites could have formed from similar organic matter brought into the Slave lithospheric mantle by subduction. SIMS analyses of a diamond from a low-MgO eclogite show an outer core with systematic rimwards increases in δ 13C values coupled with decreases in nitrogen contents, and a rim with pronounced alternating growth zones. The coupled δ 13C-nitrogen data suggest that the diamond precipitated during fractional crystallization from an oxidized fluid/melt from which nitrogen was progressively depleted during growth. Model calculations of the co-variation of δ 13C-N yielded a partition coefficient ( KN) value of 5, indicating that

  13. Competitive graphitization and diamond growth on hot-dip aluminized carbon steel substrate

    NASA Astrophysics Data System (ADS)

    Li, Y. S.; Ma, H. T.; Yang, L. Z.; Zhang, C. Z.; Feng, R. F.; Yang, Q.; Hirose, A.

    2014-09-01

    When carbon steel is directly exposed in 99%H2-1%CH4 gas mixture for plasma enhanced CVD deposition of diamond coatings, an intermediate graphite layer is preferentially formed on the substrate surface, and the substrate is subjected to a severe internal carburization attack. The diamond coatings formed easily delaminate from the steel substrate. Hot dip aluminizing treatment of the carbon steel has markedly promoted diamond nucleation, growth and interfacial adhesion. The formation of graphite intermediate phase on the substrate surface is effectively inhibited and the substrate carburization is also suppressed. The possible mechanism of this transition is discussed based on a series of analytical techniques.

  14. Find of anisotropic carbonic matter on a curve-faced diamond crystal

    NASA Astrophysics Data System (ADS)

    Brodskaya, R. L.; Golubev, E. A.; Isaenko, S. I.

    2016-12-01

    The study focuses on the identification and investigation of crystal-optical anisotropy phenomena observed on surfaces of a curve-faced diamond crystal found in alluvial sediments of the Lower Us'va River in Perm territory. Raman spectroscopy and atomic force microscopy show that interference of polarized light reflected from the tetrahexahedral faces of the diamond crystal is inspired by anisotropic carbonic matter, which appears as a film with graphene or nanographite structure and about 4 nm in thickness. The data allow us to suggest the formation conditions of curve-faced diamond crystals and origin of nanocrystalline carbonic matter on their faces.

  15. Ion-implanted extrinsic Ge photodetectors with extended cutoff wavelength

    NASA Technical Reports Server (NTRS)

    Wu, I. C.; Beeman, J. W.; Luke, P. N.; Hansen, W. L.; Haller, E. E.

    1991-01-01

    Far-IR Ge detectors fabricated using boron ion implantation are shown to exhibit operating characteristics compatible with requirements for low background applications. Device parameters such as low dark currents, reasonably good sensitivity, and extended wavelength threshold demonstrate that ion-implanted Ge far-IR detectors offer promise for use in astrophysics instrumentation.

  16. Formation of hexagonal 9R silicon polytype by ion implantation

    NASA Astrophysics Data System (ADS)

    Korolev, D. S.; Nikolskaya, A. A.; Krivulin, N. O.; Belov, A. I.; Mikhaylov, A. N.; Pavlov, D. A.; Tetelbaum, D. I.; Sobolev, N. A.; Kumar, M.

    2017-08-01

    Transmission electron-microscopy examination revealed the appearance of a hexagonal silicon (9R polytype) inclusions in the subsrface silicon layer upon ion implantation and subsequent heat treatment of the SiO2/Si structure. The formation of this hexagonal phase is stimulated by mechanical stresses arising in the heterophase system in the course of ion implantation.

  17. Ion implantation of highly corrosive electrolyte battery components

    DOEpatents

    Muller, R.H.; Zhang, S.

    1997-01-14

    A method of producing corrosion resistant electrodes and other surfaces in corrosive batteries using ion implantation is described. Solid electrically conductive material is used as the ion implantation source. Battery electrode grids, especially anode grids, can be produced with greatly increased corrosion resistance for use in lead acid, molten salt, and sodium sulfur. 6 figs.

  18. Ion implantation of highly corrosive electrolyte battery components

    DOEpatents

    Muller, Rolf H.; Zhang, Shengtao

    1997-01-01

    A method of producing corrosion resistant electrodes and other surfaces in corrosive batteries using ion implantation is described. Solid electrically conductive material is used as the ion implantation source. Battery electrode grids, especially anode grids, can be produced with greatly increased corrosion resistance for use in lead acid, molten salt, end sodium sulfur.

  19. Diamond like carbon coatings: Categorization by atomic number density

    NASA Technical Reports Server (NTRS)

    Angus, John C.

    1986-01-01

    Dense diamond-like hydrocarbon films grown at the NASA Lewis Research Center by radio frequency self bias discharge and by direct ion beam deposition were studied. A new method for categorizing hydrocarbons based on their atomic number density and elemental composition was developed and applied to the diamond-like hydrocarbon films. It was shown that the diamond-like hydrocarbon films are an entirely new class of hydrocarbons with atomic number densities lying between those of single crystal diamond and adamantanes. In addition, a major review article on these new materials was completed in cooperation with NASA Lewis Research Center personnel.

  20. Self-enhanced plasma discharge effect in the deposition of diamond-like carbon films on the inner surface of slender tube

    NASA Astrophysics Data System (ADS)

    Xu, Yi; Li, Liuhe; Luo, Sida; Lu, Qiuyuan; Gu, Jiabin; Lei, Ning; Huo, Chunqin

    2017-01-01

    Enhanced glow discharge plasma immersion ion implantation and deposition (EGD-PIII&D) have been proved to be highly effective for depositing diamond-like carbon (DLC) films on the inner surface of the slender quartz tube with a deposition rate of 1.3 μm/min. Such a high-efficiency DLC films deposition was explained previously as the short electrons mean free path to cause large collision frequency between electrons and neutral particles. However, in this paper, we found that the inner surface material of the tube itself play a vital role on the films deposition. To disclose the mechanism of this phenomenon, the effect of different inner surface materials on plasma discharge was experimentally and theoretically investigated. Then a self-enhancing plasma discharge is discovered. It is found that secondary electrons emitted from the inner surface material, whatever it is the tube inner surface or deposited DLC films, can dramatically enhance the plasma discharge to improve the DLC films deposition rate.

  1. Enhanced patterning by tilted ion implantation

    NASA Astrophysics Data System (ADS)

    Kim, Sang Wan; Zheng, Peng; Kato, Kimihiko; Rubin, Leonard; Liu, Tsu-Jae King

    2016-03-01

    Tilted ion implantation (TII) is proposed as a lower-cost alternative to self-aligned double patterning (SADP) for pitch halving. This new approach is based on an enhancement in etch rate of a hard-mask layer by implant-induced damage. Ar+ implantation into a thin layer of silicon dioxide (SiO2) is shown to enhance its etch rate in dilute hydrofluoric acid (HF) solution, by up to 9× for an implant dose of 3×1014 cm-2. The formation of sub-lithographic features defined by masked tilted Ar+ implantation into a SiO2 hard-mask layer is experimentally demonstrated. Features with sizes as small as ~21 nm, self-aligned to the lithographically patterned mask, are achieved. As compared with SADP, enhanced patterning by TII requires far fewer and lower-cost process steps and hence is expected to be much more cost-effective.

  2. Surface modification of sapphire by ion implantation

    SciTech Connect

    McHargue, C.J.

    1998-11-01

    The range of microstructures and properties of sapphire (single crystalline Al{sub 2}O{sub 3}) that are produced by ion implantation are discussed with respect to the implantation parameters of ion species, fluence, irradiation temperature and the orientation of the ion beam relative to crystallographic axes. The microstructure of implanted sapphire may be crystalline with varying concentrations of defects or it may be amorphous perhaps with short-range order. At moderate to high fluences, implanted metallic ions often coalesce into pure metallic colloids and gas ions form bubbles. Many of the implanted microstructural features have been identified from studies using transmission electron microscopy (TEM), optical spectroscopy, Moessbauer spectroscopy, and Rutherford backscattering-channeling. The chemical, mechanical, and physical properties reflect the microstructures.

  3. Ion implanted Bragg{endash}Fresnel lens

    SciTech Connect

    Souvorov, A.; Snigirev, A.; Snigireva, I.; Aristova, E.

    1996-05-01

    We have investigated the feasibility of widening the bandpath of the Bragg{endash}Fresnel optical element through the use of ion implantation. The focusing properties of Bragg{endash}Fresnel lenses (BFLs) were studied as a function of the implantation dose and energy. An enhancement of the focus intensity of up to 15{percent} was found, which is less than expected. Due to the complicated scattering of the low energy ions inside the micrometer- and submicrometer-sized crystal features that make up the BFL relief, the implantation technology destroys the peripheral zones of the BFL more than it increases the intensity in the focus. Nevertheless we believe that high energy implantation can be successfully used to modify the BFL reflectivity, especially in the case of nearly backscattering reflection. {copyright} {ital 1996 American Institute of Physics.}

  4. Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon

    SciTech Connect

    Luo, J.; Li, L. H. E-mail: paul.chu@cityu.edu.hk; Liu, H. T.; Xu, Y.; Zuo, X. J.; Zhu, P. Z.; Ma, Y. F.; Yu, K. M.; Fu, Ricky K. Y.; Chu, Paul K. E-mail: paul.chu@cityu.edu.hk

    2014-06-15

    Enhanced glow discharge plasma immersion ion implantation does not require an external plasma source but ion focusing affects the lateral ion fluence uniformity, thereby hampering its use in high-fluence hydrogen ion implantation for thin film transfer and fabrication of silicon-on-insulator. Insertion of a metal ring between the sample stage and glass chamber improves the ion uniformity and reduces the ion fluence non-uniformity as the cathode voltage is raised. Two-dimensional multiple-grid particle-in-cell simulation confirms that the variation of electric field inside the chamber leads to mitigation of the ion focusing phenomenon and the results are corroborated experimentally by hydrogen forward scattering.

  5. DLC coating of interior surfaces of steel tubes by low energy plasma source ion implantation and deposition

    NASA Astrophysics Data System (ADS)

    Baba, K.; Hatada, R.; Flege, S.; Ensinger, W.

    2014-08-01

    The plasma source ion implantation (PSII) process can be used for the treatment of the interior surfaces of tubes. Typically, this is done with higher ion energies of 10 keV or more. The resulting film thickness and the properties of the DLC film usually show a dependence on position, i.e. the distance from the edge of the tube. In order to investigate whether this effect is also present with lower energies (and if so, to what extent), deposition was carried out at negative pulse voltages of -5 kV. A diamond-like carbon (DLC) film was deposited by using acetylene as the plasma gas. The substrate consisted of stainless steel tubes with an inner diameter of 20 mm and a length of 100 and 200 mm, respectively. The distribution of the thickness, film composition, structure, surface morphology and friction coefficient as a function of the position inside the tube were investigated. The results of this low energy treatment were compared with investigations which employed higher ion energies.

  6. Heavy-Ion Radiation-Induced Diamond Formation in Carbonaceous Materials

    NASA Astrophysics Data System (ADS)

    Daulton, T. L.; Ozima, M.

    1996-10-01

    The feasibility of a radiation-induced diamond formation (RIDF) mechanism is demonstrated by the observation of nano-diamonds in carburanium, a U-rich fine-grained, coal-like assemblage containing amorphous carbonaceous material of Precambrian age from North Karelia, Russia. This mineral deposit represents an ideal natural environment for RIDF because the carbonaceous grains present have received a high fluence of energetic particles over a geological time scale. Fragments of carburanium were subjected to acid dissolution treatments to isolate any diamond present. Transmission electron microscopy on these acid residues identified 500 nm polycrystalline diamond aggregates. This observation and estimates of formation efficiencies supports the hypothesis that diamond can form in carbonaceous material irradiated by U decay fragments. Diamond concentration in bulk carburanium is #197# 30 ppm indicating that the RIDF efficiencies might be relatively low as compared to the competing formation of graphite; the acid treatment was an essential key in the recovery of diamond in carburanium. This fact could contribute to the lack of observation of diamond in well- studied ion-implanted carbons. Experiments to synthesize nano-diamonds by heavy-ion irradiation are scheduled for late 1996 at ANL's accelerator ATLAS.

  7. Deposition And Characterization Of Ultra Thin Diamond Like Carbon Films

    NASA Astrophysics Data System (ADS)

    Tomcik, B.

    2010-07-01

    Amorphous hydrogenated and/or nitrogenated carbon films, a-C:H/a-C:N, in overall thickness up to 2 nm are materials of choice as a mechanical and corrosion protection layer of the magnetic media in modern hard disk drive disks. In order to obtain high density and void-free films the sputtering technology has been replaced by different plasma and ion beam deposition techniques. Hydrocarbon gas precursors, like C2H2 or CH4 with H2 and N2 as reactive gases are commonly used in Kaufman DC ion and RF plasma beam sources. Optimum incident energy of carbon ions, C+, is up to 100 eV while the typical ion current densities during the film formation are in the mA/cm2 range. Other carbon deposition techniques, like filtered cathodic arc, still suffer from co-deposition of fine nanosized carbon clusters (nano dust) and their improvements are moving toward arc excitation in the kHz and MHz frequency range. Non-destructive film analysis like μ-Raman optical spectroscopy, spectroscopic ellipsometry, FTIR and optical surface analysis are mainly used in the carbon film characterization. Due to extreme low film thicknesses the surface enhanced Raman spectroscopy (SERS) with pre-deposited layer of Au can reduce the signal collection time and minimize photon-induced damage during the spectra acquisition. Standard approach in the μ-Raman film evaluation is the measurement of the position (shift) and area of D and G-peaks under the deconvoluted overall carbon spectrum. Also, a slope of the carbon spectrum in the 1000-2000 cm-1 wavenumber range is used as a measure of the hydrogen intake within a film. Diamond like carbon (DLC) film should possess elasticity and self-healing properties during the occasional crash of the read-write head flying only couple of nanometers above the spinning film. Film corrosion protection capabilities are mostly evaluated by electrochemical tests, potentio-dynamic and linear polarization method and by business environmental method. Corrosion mechanism

  8. Electronic Power System Application of Diamond-Like Carbon Films

    NASA Technical Reports Server (NTRS)

    Wu, Richard L. C.; Kosai, H.; Fries-Carr, S.; Weimer, J.; Freeman, M.; Schwarze, G. E.

    2003-01-01

    A prototype manufacturing technology for producing high volume efficiency and high energy density diamond-like carbon (DLC) capacitors has been developed. Unique dual ion-beam deposition and web-handling systems have been designed and constructed to deposit high quality DLC films simultaneously on both sides of capacitor grade aluminum foil and aluminum-coated polymer films. An optimized process, using inductively coupled RF ion sources, has been used to synthesize electrically robust DLC films. DLC films are amorphous and highly flexible, making them suitable for the production of wound capacitors. DLC capacitors are reliable and stable over a wide range of AC frequencies from 20 Hz to 1 MHz, and over a temperature range from .500 C to 3000 C. The compact DLC capacitors offer at least a 50% decrease in weight and volume and a greater than 50% increase in temperature handling capability over equal value capacitors built with existing technologies. The DLC capacitors will be suitable for high temperature, high voltage, pulsed power and filter applications.

  9. Deposition of boron doped diamond and carbon nanomaterials on graphite foam electrodes

    NASA Astrophysics Data System (ADS)

    Marton, Marian; Vojs, Marian; Kotlár, Mário; Michniak, Pavol; Vančo, Ľubomír; Veselý, Marian; Redhammer, Robert

    2014-09-01

    Boron doped diamond (BDD) has remarkable physical and chemical properties, that makes it an attractive material for electrochemical applications. In this study, deposition process of BDD on porous carbon foam electrodes was performed by HFCVD method. After depositions, the substrates were not homogenously covered by the BDD thin film only. Depending on the deposition temperature, foam porosity and distance from heated filaments, different carbon nanomaterials were synthesized. The boron doped diamond, graphite nanosheets, carbon nanowalls and its composites occurred on the foams outer and inner surfaces. Two new observed types of carbon structures, the carbon nanowalls - boron doped diamond composite and graphite nanotips are analyzed and described. Analyses were made by SEM and Raman spectroscopy. The influence of deposition conditions on the growth process is discussed.

  10. Response of synthetic diamond detectors in proton, carbon, and oxygen ion beams.

    PubMed

    Rossomme, Séverine; Marinelli, Marco; Verona-Rinati, Gianluca; Romano, Francesco; Cirrone, Pablo Antonio Giuseppe; Kacperek, Andrzej; Vynckier, Stefaan; Palmans, Hugo

    2017-07-15

    In this work, the LET-dependence of the response of synthetic diamond detectors is investigated in different particle beams. Measurements were performed in three nonmodulated particle beams (proton, carbon, and oxygen). The response of five synthetic diamond detectors was compared to the response of a Markus or an Advanced Markus ionization chamber. The synthetic diamond detectors were used with their axis parallel to the beam axis and without any bias voltage. A high bias voltage was applied to the ionization chambers, to minimize ion recombination, for which no correction is applied (+300 V and +400 V were applied to the Markus and Advanced Markus ionization chambers respectively). The ratio between the normalized response of the synthetic diamond detectors and the normalized response of the ionization chamber shows an under-response of the synthetic diamond detectors in carbon and oxygen ion beams. No under-response of the synthetic diamond detectors is observed in protons. For each beam, combining results obtained for the five synthetic diamond detectors and considering the uncertainties, a linear fit of the ratio between the normalized response of the synthetic diamond detectors and the normalized response of the ionization chamber is determined. The response of the synthetic diamond detectors can be described as a function of LET as (-6.22E-4 ± 3.17E-3) • LET + (0.99 ± 0.01) in proton beam, (-2.51E-4 ± 1.18E-4) • LET + (1.01 ± 0.01) in carbon ion beam and (-2.77E-4 ± 0.56E-4) • LET + (1.03 ± 0.01) in oxygen ion beam. Combining results obtained in carbon and oxygen ion beams, a LET dependence of about 0.026% (±0.013%) per keV/μm is estimated. Due to the high LET value, a LET dependence of the response of the synthetic diamond detector was observed in the case of carbon and oxygen beams. The effect was found to be negligible in proton beams, due to the low LET value. The under-response of the synthetic diamond detector may result from the

  11. Investigation of Carbon ion-implanted waveguides in tungsten bronze (Ca0.28Ba0.72)0.25(Sr0.6Ba0.4)0.75Nb2O6 single crystal

    NASA Astrophysics Data System (ADS)

    Jiao, Yang; Wang, Chuan-Kui; Li, Zong-Liang; Ren, Ying-Ying

    2014-09-01

    Planar optical waveguides were fabricated in (Ca0.28Ba0.72)0.25(Sr0.6Ba0.4)0.75Nb2O6 (CSBN25) crystal by 6.0-MeV C+ ion implantation with fluences of 2, 4 and 6 × 1014 ions/cm2 at room temperature. The mode parameters, refractive indices profiles are measured and the refractive indices behavior in the waveguide region is discussed. The shape of nuclear energy loss distribution of the C+ implantation was similar to those of the waveguide refractive index profiles, which means an inherent relationship between the waveguide formation and the energetic energy deposition. The extraordinary refractive index has a small positive change in the surface region after the implantation.

  12. Correlated carbon and oxygen isotope signatures in eclogitic diamonds with coesite inclusions: A SIMS investigation of diamonds from Guaniamo, Argyle and Orapa mines

    NASA Astrophysics Data System (ADS)

    Schulze, D. J.; Page, Z.; Harte, B.; Valley, J.; Channer, D.; Jaques, L.

    2006-12-01

    Using ion microprobes and secondary-ion mass spectrometry we have analyzed the carbon and oxygen isotopic composition of eclogite-suite diamonds and their coesite inclusions, respectively, from three suites of diamonds of Proterozoic age. Extremely high (for the mantle) oxygen isotope values (delta 18O of +10.2 to +16.9 per mil VSMOW) are preserved in coesites included in eclogitic diamonds from Guaniamo, Venezuela (Schulze et al., Nature, 2003), providing compelling evidence for an origin of their eclogite hosts by subduction of sea water altered ocean floor basalts. In situ SIMS analyses of their host diamonds yield carbon isotope values (delta 13C) of -12 to -18 per mil PDB. SIMS analyses of coesite inclusions from Argyle, Australia diamonds previously analyzed by combustion methods for d13C composition (Jaques et al., Proc. 4th Kimb. Conf, 1989), also yield anomalously high d18O values (+6.8 to +16.0 per mil VSMOW), that correlate with the anomalously low carbon isotope values (-10.3 to -14.1 per mil PDB). One coesite-bearing diamond from Orapa, Botswana analyzed in situ by SIMS has a d18O value of the coesite of +8.5 per mil VSMOW and a d13C value of the adjacent diamond host of -9.0 per mil PDB. A second Orapa stone has a SIMS carbon isotope compositional range of d13C = -14 to -16 per mil PDB, but the coesite is too small for ion probe analysis. At each of these localities, carbon isotope values of coesite-bearing diamonds that are lower than typical of mantle carbon are correlated with oxygen isotope compositions of included coesites that are substantially above the common mantle oxygen isotope range. Such results are not in accord with diamond genesis models involving formation of eclogitic diamonds from igneous melts undergoing fractionation in the mantle or by crystallization from primordial inhomogeneities in Earth's mantle. By analogy with the oxygen isotope compositions of altered ocean floor basalts and Alpine (subduction zone) eclogites they are

  13. Diamond synthesis from carbon nanofibers at low temperature and low pressure

    NASA Astrophysics Data System (ADS)

    Luo, Chengzhi; Qi, Xiang; Pan, Chunxu; Yang, Wenge

    2015-09-01

    In this article, we report a new route to synthesize diamond by converting “solid” carbon nanofibers with a Spark Plasma Sintering system under low temperature and pressure (even at atmospheric pressure). Well-crystallized diamond crystals are obtained at the tips of the carbon nanofibers after sintering at 1500 °C and atmospheric pressure. Combining with scanning electron microscopy, transmission electron microscopy, electron-energy loss spectroscopy and Raman spectroscopy observations, we propose the conversion mechanism as follows: the disorder “solid” carbon nanofibers → well crystallined carbon nanofibers → bent graphitic sheets → onion-liked rings → diamond single crystal → the bigger congregated diamond crystal. It is believed that the plasma generated by low-voltage, vacuum spark, via a pulsed DC in Spark Plasma Sintering process, plays a critical role in the low temperature and low pressure diamond formation. This Spark Plasma Sintering process may provide a new route for diamond synthesis in an economical way to a large scale.

  14. Diamond synthesis from carbon nanofibers at low temperature and low pressure.

    PubMed

    Luo, Chengzhi; Qi, Xiang; Pan, Chunxu; Yang, Wenge

    2015-09-09

    In this article, we report a new route to synthesize diamond by converting "solid" carbon nanofibers with a Spark Plasma Sintering system under low temperature and pressure (even at atmospheric pressure). Well-crystallized diamond crystals are obtained at the tips of the carbon nanofibers after sintering at 1500 °C and atmospheric pressure. Combining with scanning electron microscopy, transmission electron microscopy, electron-energy loss spectroscopy and Raman spectroscopy observations, we propose the conversion mechanism as follows: the disorder "solid" carbon nanofibers→well crystallined carbon nanofibers→bent graphitic sheets→onion-liked rings→diamond single crystal→the bigger congregated diamond crystal. It is believed that the plasma generated by low-voltage, vacuum spark, via a pulsed DC in Spark Plasma Sintering process, plays a critical role in the low temperature and low pressure diamond formation. This Spark Plasma Sintering process may provide a new route for diamond synthesis in an economical way to a large scale.

  15. Bucky-diamond versus onion-like carbon: End of graphitization

    NASA Astrophysics Data System (ADS)

    Xu, Qian; Zhao, Xiang

    2012-10-01

    The graphitizing extent of nanodiamond has been studied by examining stabilities of all intermediate structures encountered in the graphitization process including bucky-diamond and onion-like carbon. The curves of enthalpy of formation imply that for nanodiamonds with various size and morphology, there are at least one or more peaks and valleys corresponding to the thermodynamically disfavored and favored structures, respectively. The unstable structures located at the peaks are indicated to be bucky-diamond and onion-like carbon. In contrast, the stable structures positioned along the valleys are variants of bucky-diamond. Furthermore, the difference in these structural stabilities is largely attributed to the relative contributions from both dangling bond energy and strain energy. The variants of bucky-diamond create a balance in those two aspects, and therefore become the thermodynamically favored structures and indicate the end of graphitization.

  16. Method for ion implantation induced embedded particle formation via reduction

    DOEpatents

    Hampikian, Janet M; Hunt, Eden M

    2001-01-01

    A method for ion implantation induced embedded particle formation via reduction with the steps of ion implantation with an ion/element that will chemically reduce the chosen substrate material, implantation of the ion/element to a sufficient concentration and at a sufficient energy for particle formation, and control of the temperature of the substrate during implantation. A preferred embodiment includes the formation of particles which are nano-dimensional (<100 m-n in size). The phase of the particles may be affected by control of the substrate temperature during and/or after the ion implantation process.

  17. Ion implantation of solar cell junctions without mass analysis

    NASA Technical Reports Server (NTRS)

    Fitzgerald, D.; Tonn, D. G.

    1981-01-01

    This paper is a summary of an investigation to determine the feasibility of producing solar cells by means of ion implantation without the use of mass analysis. Ion implants were performed using molecular and atomic phosphorus produced by the vaporization of solid red phosphorus and ionized in an electron bombardment source. Solar cell junctions were ion implanted by mass analysis of individual molecular species and by direct unanalyzed implants from the ion source. The implant dose ranged from 10 to the 14th to 10 to the 16th atoms/sq cm and the energy per implanted atom ranged from 5 KeV to 40 KeV in this study.

  18. Ion implantation in silicon to facilitate testing of photonic circuits

    NASA Astrophysics Data System (ADS)

    Reed, Graham T.; Milosevic, Milan M.; Chen, Xia; Cao, Wei; Littlejohns, Callum G.; Wang, Hong; Khokhar, Ali Z.; Thomson, David J.

    2017-02-01

    In recent years, we have presented results on the development of erasable gratings in silicon to facilitate wafer scale testing of photonics circuits via ion implantation of germanium. Similar technology can be employed to develop a range of optical devices that are reported in this paper. Ion implantation into silicon causes radiation damage resulting in a refractive index increase, and can therefore form the basis of multiple optical devices. We demonstrate the principle of a series of devices for wafers scale testing and have also implemented the ion implantation based refractive index change in integrated photonics devices for device trimming.

  19. Ion-implanted planar-buried-heterostructure diode laser

    DOEpatents

    Brennan, Thomas M.; Hammons, Burrell E.; Myers, David R.; Vawter, Gregory A.

    1991-01-01

    A Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding layer 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an ion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.

  20. Carbon nanotunnels form from single-walled carbon nanotubes interacting with a diamond (100)-(2 X 1) surface.

    SciTech Connect

    Horner, D. A.; Sternberg, M.; Zapol, P.; Curtiss, L. A.

    2011-08-01

    A quantum chemical study of the interaction of (5,5), (7,7), (9,9) and (8,0) single-walled carbon nanotubes with a clean (100)-(2 x 1) diamond surface is reported. Stable structures with covalent bonds at the interface were found for carbon nanotubes oriented parallel or perpendicular to the dimer rows on the reconstructed (100) surface. The binding energy of the most stable (5,5) nanotube-diamond structure is 1.7 eV/{angstrom}, and is attributed to strong covalent bonds formed between the carbon nanotube and the diamond surface. The structure of the nanotube is distorted by adsorption on the surface such that it adopts a tunnel-like geometry. Two other nanotunnel geometries were found for the (5,5) nanotube, with binding energies of 1.39 and 1.09 eV/{angstrom}. In the most stable (5,5) nanotube-diamond structure the interaction between the nanotube and the diamond surface produces a 0.6 eV band gap near the Fermi level, but the metallic character of the nanotube is maintained in the two other, less strongly bound nanotunnel structures. No charge transfer occurs between the diamond surface and the nanotunnels in any of the three orientations. Binding energies decrease with increases in tube diameter, to the extent that one of the three nanotunnel structures is not formed by (9,9) carbon nanotubes.

  1. Dated eclogitic diamond growth zones reveal variable recycling of crustal carbon through time

    NASA Astrophysics Data System (ADS)

    Timmerman, S.; Koornneef, J. M.; Chinn, I. L.; Davies, G. R.

    2017-04-01

    Monocrystalline diamonds commonly record complex internal structures reflecting episodic growth linked to changing carbon-bearing fluids in the mantle. Using diamonds to trace the evolution of the deep carbon cycle therefore requires dating of individual diamond growth zones. To this end Rb-Sr and Sm-Nd isotope data are presented from individual eclogitic silicate inclusions from the Orapa and Letlhakane diamond mines, Botswana. δ13 C values are reported from the host diamond growth zones. Heterogeneous 87Sr/86Sr ratios (0.7033-0.7097) suggest inclusion formation in multiple and distinct tectono-magmatic environments. Sm-Nd isochron ages were determined based on groups of inclusions with similar trace element chemistry, Sr isotope ratios, and nitrogen aggregation of the host diamond growth zone. Diamond growth events at 0.14 ± 0.09, 0.25 ± 0.04, 1.1 ± 0.09, 1.70 ± 0.34 and 2.33 ± 0.02 Ga can be directly related to regional tectono-magmatic events. Individual diamonds record episodic growth with age differences of up to 2 Ga. Dated diamond zones have variable δ13 C values (-5.0 to -33.6‰ vs PDB) and appear to imply changes in subducted material over time. The studied Botswanan diamonds are interpreted to have formed in different tectono-magmatic environments that involve mixing of carbon from three sources that represent: i) subducted biogenic sediments (lightest δ13 C, low 87Sr/86Sr); ii) subducted carbonate-rich sediments (heavy δ13 C, high 87Sr/86Sr) and iii) depleted upper mantle (heavy δ13 C, low 87Sr/86Sr). We infer that older diamonds from these two localities are more likely to have light δ13 C due to greater subduction of biogenic sediments that may be related to hotter and more reduced conditions in the Archaean before the Great Oxidation Event at 2.3 Ga. These findings imply a marked temporal change in the nature of subducted carbon beneath Botswana and warrant further study to establish if this is a global phenomenon.

  2. Carbon and Nitrogen Isotope Systematics in a Sector-Zoned Diamond from the Mir Kimberlite, Yakutia

    NASA Astrophysics Data System (ADS)

    Hauri, E.; Bulanova, G.; Pearson, G.; Griffin, B.

    2002-05-01

    A single Yakutian octahedral diamond, displaying striking cubic and octahedral growth sectors surrounded by an octahedral rim, has been analysed for carbon and nitrogen isotopic compositions by SIMS and for nitrogen concentration (by SIMS and FTIR) and nitrogen aggregation state (FTIR). A graphite "seed" inclusion identified within the diamond, enriched in K, Ca, Ti, Rb and Sr, provides evidence that the diamond may have grown from a carbonate melt/fluid interacting with upper mantle rocks. Carbon and nitrogen isotope compositions become progressively heavier from the core region (d13C = -7 to -5 and d15N= -3) towards the inner rim zones (d13C = -3 and d15N = +8.9 to +5) of the diamond. Nitrogen concentration and aggregation measurements show corresponding decreases that generally correlate with the isotopic variations. These systematic variations within the core and intermediate regions of the diamond are consistent with their formation during diamond growth from CO2-rich fluids as a continuous event, accompanied by slight progressive isotopic fractionation of carbon and nitrogen. However, the observed isotope and nitrogen abundance trends are not those predicted from thermodynamic modelling of fluid-solid equilibria in a C-N-O-H-bearing system due to changes in parameters such as fO2 (Deines, 1980; Deines et al 1989). Within the finely-zoned octahedral rim region, non-systematic variations in nitrogen abundance, nitrogen aggregation, and nitrogen and carbon isotope ratios were observed. Several interpretations are given for this phenomenon, including kinetic effects during growth of the diamond rim under different conditions from those of the core-intermediate regions, or rapidly changing fluid sources during the growth. No fractionation of nitrogen isotopes between cubic and octahedral growth zones was identified within the studied diamond, in contrast with the fractionation phenomena found in synthetic diamonds of mixed growth. Our results illustrate the

  3. Ultrananocrystalline diamond decoration on to the single wall carbon nano tubes

    NASA Astrophysics Data System (ADS)

    Sinha, Bhavesh; Late, Datta; Jejurikar, Suhas M.

    2017-10-01

    We have demonstrated the decoration of the ultrananocrystalline diamonds on single walled carbon nanotubes using a hot filament assisted chemical vapor deposition. Study reveals the critical influence of the filament to substrate distance on the formation of ultrananocrystalline diamonds on to the single walled carbon nanotubes. It is also observed that etching of carbon nanotubes, due to the presence of unavoidable atomic hydrogen throughout the chemical vapor deposition processes, can be significantly reduced by adjusting the filament to substrate distance. Morphological and structural investigations performed using high resolution transmission electron microscope suggests the growth of ultrananocrystalline diamond is subsequent to the formation of crystalline sp2 carbon layer on the nanotube wall, enabling us to suggest a growth model. The composite synthesized can be thought not only to use as a fuel cell catalyst support but also as chemical sensors, bio-sensors and micro electromechanical systems (MEMS).

  4. Synthesis of sea urchin-like carbon nanotubes on nano-diamond powder.

    PubMed

    Hwang, E J; Lee, S K; Jeong, M G; Lee, Y B; Lim, D S

    2012-07-01

    Carbon nanotubes (CNTs) have unique atomic structure and properties, such as a high aspect ratio and high mechanical, electrical and thermal properties. On the other hand, the agglomeration and entanglement of CNTs restrict their applications. Sea urchin-like multiwalled carbon nanotubes, which have a small aspect ratio, can minimize the problem of dispersion. The high hardness, thermal conductivity and chemical inertness of the nano-diamond powder make it suitable for a wide range of applications in the mechanical and electronic fields. CNTs were synthesized on nano-diamond powder by thermal CVD to fabricate a filler with suitable mechanical properties and chemical stability. This paper reports the growth of CNTs with a sea urchin-like structure on the surface of the nano-diamond powder. Nano-diamond powders were dispersed in an attritional milling system using zirconia beads in ethanol. After the milling process, 3-aminopropyltrimethoxysilane (APS) was added as a linker. Silanization was performed between the nano-diamond particles and the metal catalyst. Iron chloride was used as a catalyst for the fabrication of the CNTs. After drying, catalyst-attached nano-diamond powders could be achieved. The growth of the carbon nanotubes was carried out by CVD. The CNT morphology was examined by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The mean diameter and length of the CNTs were 201 nm and 3.25 microm, respectively.

  5. Molecular ion sources for low energy semiconductor ion implantation (invited)

    SciTech Connect

    Hershcovitch, A.; Gushenets, V. I.; Bugaev, A. S.; Oks, E. M.; Vizir, A.; Yushkov, G. Yu.; Seleznev, D. N.; Kulevoy, T. V.; Kozlov, A.; Kropachev, G. N.; Kuibeda, R. P.; Minaev, S.; Dugin, S.; Alexeyenko, O.

    2016-02-15

    Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively. Carborane, which is the most stable molecular boron ion leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C{sub 4}H{sub 12}B{sub 10}O{sub 4}) was synthesized and utilized in the ITEP Bernas ion source resulting in large carborane ion output, without carbon residue. Pure gaseous processes are desired to enable rapid switch among ion species. Molecular phosphorous was generated by introducing phosphine in dissociators via 4PH{sub 3} = P{sub 4} + 6H{sub 2}; generated molecular phosphorous in a pure gaseous process was then injected into the HCEI Calutron-Bernas ion source, from which P{sub 4}{sup +} ion beams were extracted. Results from devices and some additional concepts are described.

  6. High current metal ion implantation facility

    SciTech Connect

    Oztarhan, A.; Brown, I.G.; Evans, P.; Watt, G.; Bakkaloglu, C.; Eltas, A.S.; Oks, E.

    1998-12-31

    A vacuum arc ion source based metal ion implantation facility has been established at Dokuz Eylul University, Izmir, Turkey and a surface modification research and development program is underway. The system is similar to the one in Lawrence Berkeley Laboratory which was first built and developed by Brown et al. The broad-beam ion source is repetitively pulsed at rates up to {approximately}10 pulses per second (can be increased to 50 pulses per second) and the extracted ion beam current can be up to {approximately}1 Amp. peak or {approximately}10 mA time averaged. The ion source extraction voltage was increased to 60 kV corresponding to mean beam energies of up to 150 keV or more because of the ion charge state multiplicity (extraction voltage can be increased to 100 kV if desired). Commissioning of the facility is in progress. Initial emphasis of the R and D programs that will be carried out will be in forming tribologically enhanced materials for industrial applications. In this paper they describe the design and operation of the implanter, summarize the preliminary performance parameters that have been obtained, and outline some of the programs they anticipate doing.

  7. Krypton ion implantation effect on selenium nanowires

    NASA Astrophysics Data System (ADS)

    Panchal, Suresh; Chauhan, R. P.

    2017-08-01

    Among the rapidly progressing interdisciplinary areas of physics, chemistry, material science etc. ion induced modifications of materials is one such evolving field. It has been realized in recent years that a material, in the form of an accelerated ion beam, embedded into a target specimen offers a most productive tool for transforming its properties in a controlled manner. In semiconductors particularly, where the transport behavior is determined by very small concentrations of certain impurities, implantation of ions may bring considerable changes. The present work is based on the study of the effect of krypton ion implantation on selenium nanowires. Selenium nanowires of diameter 80 nm were synthesized by template assisted electro deposition technique. Implantation of krypton ions was done at Inter University Accelerator Centre (IUAC), New Delhi, India. The effect of implantation on structural, electrical and optical properties of selenium nanowires was investigated. XRD analysis of pristine and implanted nanowires shows no shifting in the peak position but there is a variation in the relative intensity with fluence. UV-Visible spectroscopy shows the decrease in the optical band gap with fluence. PL spectra showed emission peak at higher wavelength. A substantial rise in the current was observed from I-V measurements, after implantation and with the increase in fluence. The increase in current conduction may be due to the increase in the current carriers.

  8. Computer automation of high current ion implanters

    NASA Astrophysics Data System (ADS)

    Woodard, Ollie; Lindsey, Paul; Cecil, Joseph; Pipe, Robert

    1985-01-01

    Complete computer automation of a high current ion implanter has been achieved. Special design considerations were necessary for automation including the development of a simplified ion source, a simplified beam transport control function, and a computer aided real-time feedback dosimetry control system. A special, versatile software architecture was also necessary to allow protected operation by unskilled operators, as well as diagnostic and maintenance modes accessible only to qualified personnel. Integral mounting of the DEC LSI-11 computer in the implanter frame provided additional challenges regarding EMI control and the electrical isolation required. The end result is a system in which all pertinent functions of the implanter are computer monitored and controlled continuously, allowing for automatic set-up, operation, on-line fault detection and diagnostics, with recovery software to correct many transient problems as they occur. This paper will discuss both general and specific solutions to the design problems encountered, and will review the system performance from a user point of view.

  9. Integral stress in ion-implanted silicon

    NASA Astrophysics Data System (ADS)

    Tamulevicius, S.; Pozela, I.; Jankauskas, J.

    1998-11-01

    A theoretical model of production and relaxation of stress in ion-implanted silicon is proposed. It is based on the assumptions that the point defects are the source of mechanical stress and that the relaxation of stress is due to the viscous flow of ion-irradiated silicon. The integrated stress acting in a damaged layer has been studied as a function of the 0022-3727/31/21/002/img1-ion current density j = 0.01-0022-3727/31/21/002/img2, ion energy 0022-3727/31/21/002/img3-160 keV, substrate temperature T = 78-500 K and dose in the range up to 0022-3727/31/21/002/img4. It was shown that the maximum integral stress values induced in silicon are of the order of 100 N 0022-3727/31/21/002/img5. The maximum is reached at a dose of about 0022-3727/31/21/002/img6 that corresponds to the silicon-amorphization dose. Stress due to implanted ions is essential for the high-dose region 0022-3727/31/21/002/img7 and it dominates at high temperatures of the substrate.

  10. Industrial applications of ion implantation into metal surfaces

    SciTech Connect

    Williams, J.M.

    1987-07-01

    The modern materials processing technique, ion implantation, has intriguing and attractive features that stimulate the imaginations of scientists and technologists. Success of the technique for introducing dopants into semiconductors has resulted in a stable and growing infrastructure of capital equipment and skills for use of the technique in the economy. Attention has turned to possible use of ion implantation for modification of nearly all surface related properties of materials - optical, chemical and corrosive, tribological, and several others. This presentation provides an introduction to fundamental aspects of equipment, technique, and materials science of ion implantation. Practical and economic factors pertaining to the technology are discussed. Applications and potential applications are surveyed. There are already available a number of ion-implanted products, including ball-and-roller bearings and races, punches-and-dies, injection screws for plastics molding, etc., of potential interest to the machine tool industry.

  11. All-ion-implantation process for integrated circuits

    NASA Technical Reports Server (NTRS)

    Woo, D. S.

    1979-01-01

    Simpler than diffusion fabrication, ion bombardment produces complementary-metal-oxide-semiconductor / silicon-on-sapphire (CMOS/SOS) circuits that are one-third faster. Ion implantation simplifies the integrated circuit fabrication procedure and produces circuits with uniform characteristics.

  12. Mineral inclusions in sublithospheric diamonds from Juina, Brazil: Subducted protoliths, carbonated melts and protokimberlite magmatism

    NASA Astrophysics Data System (ADS)

    Walter, Michael; Bulanova, Galina; Smith, Chris; Armstrong, Lora; Kohn, Simon; Blundy, Jon; Gobbo, Luiz

    2010-05-01

    A suite of Type II Diamonds from the Cretaceous Collier 4 kimberlite pipe, Juina Kimberlite Field, Brazil, include syngenetic mineral inclusions comprising a remarkable range of compositions that include calcium- and titanium-rich perovskite, Ca-rich majoritic garnet, olivine, TAPP phase, CAS phase, K-hollandite phase, SiO2, FeO, native iron, low-Ni sulphides, and Ca-Mg carbonate. The diamonds also exhibit a range in carbon isotopic composition (δ13C ) that effectively spans that observed in the global diamond population. Diamonds with heavy, mantle-like δ13C (-5 to -10) contain mineral inclusions indicating a transition zone origin from mafic protoliths. Diamonds with intermediate δ13C (-12 to -15) contain inclusions with chemistry indicating crystallization from near-primary and differentiated carbonated melts derived from oceanic crust in the deep upper mantle or transition zone. Diamonds with extremely light δ13C (~ -25) host inclusions with chemistry akin to high pressure-temperature phases expected to form in the transition zone from subducted pelagic sediments. Collectively, the Collier 4 diamonds and their inclusions indicate multi-stage growth histories in dynamically changing chemical environments. A 206Pb/238U age of 101±7 Ma on a CaTiSi-perovskite inclusion is close to the kimberlite emplacement time (93.1 ±1.5 Ma). This young inclusion age, together with the chemical and isotopic characteristics indicating the role of subducted materials, suggest a model in which the generation of sublithospheric diamonds and their inclusions, and the proto-kimberlite magmas, are related genetically to the interaction of subducted lithosphere and a Cretaceous plume.

  13. Influence of Si ion implantation on structure and morphology of g-C3N4

    NASA Astrophysics Data System (ADS)

    Varalakshmi, B.; Sreenivasulu, K. V.; Asokan, K.; Srikanth, V. V. S. S.

    2016-07-01

    Effect of Si ion implantation on structural and morphological features of graphite-like carbon nitride (g-C3N4) was investigated. g-C3N4 was prepared by using a simple atmospheric thermal decomposition process. The g-C3N4 pellets were irradiated with a Si ion beam of energy 200 keV with different fluencies. Structural, morphological and elemental, and phase analysis of the implanted samples in comparison with the pristine samples was carried out by using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) with energy dispersive spectroscopy (EDS) and Fourier transform infrared spectroscopy (FTIR) techniques, respectively. The observations revealed that Si ion implantation results in a negligible change in the crystallite size and alteration of the network-like to the sheet-like morphology of g-C3N4 and Si ions in the g-C3N4 network.

  14. Cell adhesion and growth on ultrananocrystalline diamond and diamond-like carbon films after different surface modifications

    NASA Astrophysics Data System (ADS)

    Miksovsky, J.; Voss, A.; Kozarova, R.; Kocourek, T.; Pisarik, P.; Ceccone, G.; Kulisch, W.; Jelinek, M.; Apostolova, M. D.; Reithmaier, J. P.; Popov, C.

    2014-04-01

    Diamond and diamond-like carbon (DLC) films possess a set of excellent physical and chemical properties which together with a high biocompatibility make them attractive candidates for a number of medical and biotechnological applications. In the current work thin ultrananocrystalline diamond (UNCD) and DLC films were comparatively investigated with respect to cell attachment and proliferation after different surface modifications. The UNCD films were prepared by microwave plasma enhanced chemical vapor deposition, the DLC films by pulsed laser deposition (PLD). The films were comprehensively characterized with respect to their basic properties, e.g. crystallinity, morphology, chemical bonding nature, etc. Afterwards the UNCD and DLC films were modified applying O2 or NH3/N2 plasmas and UV/O3 treatments to alter their surface termination. The surface composition of as-grown and modified samples was studied by X-ray photoelectron spectroscopy (XPS). Furthermore the films were characterized by contact angle measurements with water, formamide, 1-decanol and diiodomethane; from the results obtained the surface energy with its dispersive and polar components was calculated. The adhesion and proliferation of MG63 osteosarcoma cells on the different UNCD and DLC samples were assessed by measurement of the cell attachment efficiency and MTT assays. The determined cell densities were compared and correlated with the surface properties of as-deposited and modified UNCD and DLC films.

  15. Carbon and nitrogen isotope systematics in diamond: Different sensitivities to isotopic fractionation or a decoupled origin?

    NASA Astrophysics Data System (ADS)

    Hogberg, K.; Stachel, T.; Stern, R. A.

    2016-11-01

    Using stable isotope data obtained on multiple aliquots of diamonds from worldwide sources, it has been argued that carbon and nitrogen in diamond are decoupled. Here we re-investigate the carbon-nitrogen relationship based on the most comprehensive microbeam data set to date of stable isotopes and nitrogen concentrations in diamonds (n = 94) from a single locality. Our diamond samples, derived from two kimberlites in the Chidliak Field (NE Canada), show large variability in δ13C (- 28.4 ‰ to - 1.1‰, mode at - 5.8‰), δ15N (- 5.8 to + 18.8‰, mode at - 3.0‰) and nitrogen contents ([N]; 3800 to less than 1 at.ppm). In combination, cathodoluminescence imaging and microbeam analyses reveal that the diamonds grew from multiple fluid pulses, with at least one major hiatus documented in some samples that was associated with a resorption event and an abrupt change from low δ13C and [N] to mantle-like δ13C and high [N]. Overall, δ13C appears to be uncorrelated to δ15N and [N] on both the inter- and intra-diamond levels. Co-variations of δ15N-log[N], however, result in at least two parallel, negatively correlated linear arrays, which are also present on the level of the individual diamonds falling on these two trends. These arrays emerge from the two principal data clusters, are characterized by slightly negative and slightly positive δ15N (about - 3 and + 2‰, respectively) and variable but overall high [N]. Using published values for the diamond-fluid nitrogen isotope fractionation factor and nitrogen partition coefficient, these trends are perfectly reproduced by a Rayleigh fractionation model. Overall, three key elements are identified in the formation of the diamond suite studied: (1.) a low δ13C and low [N] component that possibly is directly associated with an eclogitic diamond substrate or introduced during an early stage fluid event. (2.) Repeated influx of a variably nitrogen-rich mantle fluid (mildly negative δ13C and δ15N). (3.) In waning

  16. The use of ion implantation for materials processing

    NASA Astrophysics Data System (ADS)

    Smidt, F. A.

    1986-03-01

    This report is the sixth in a series of Progress Reports on work conducted at the Naval Research Laboratory (NRL) to investigate the use of ion implantation for materials processing. The objective of the program is to develop the capabilities of ion implantation and ion beam activated deposition for new and improved surface treatment techniques of interest to Navy and DOD applications. Attainment of this objective requires both fundamental research to provide an understanding of the physical and metallurgical changes taking place in the implanted region of a material and applications oriented research to demonstrate the benefits of ion implantation. The purpose of this report is to make available from one source the results of all studies at NRL related to the use of ion implantation for materials processing so as to provide a more comprehensive picture of the scope and interrelationship of the research and to expedite technology transfer to the civilian industrial sector. The report consists of four sections describing the research and a cummulative bibliography of published papers and reports. This report describes the important factors in ion implantation science and technology and reports progress in the use of ion implantation to modify friction, wear, fatigue, corrosion, optical and magnetic properties of materials.

  17. Diamond and diamondlike carbon as wear-resistant, self-lubricating coatings for silicon nitride

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1995-01-01

    Recent work on the friction and wear properties of as-deposited fine-grain diamond, polished coarse-grain diamond, and as-deposited diamondlike carbon (DLC) films in humid air at a relative humidity of approximately 40 percent and in dry nitrogen is reviewed. Two types of chemical vapor deposition (CVD) processes are used to deposit diamond films on silicon nitride (Si3N4) substrates: microwave-plasma and hot-filament. Ion beams are used to deposit DLC films of Si3N4 substrates. The diamond and DLC films in sliding contact with hemispherical bare Si3N4 pins have low steady-state coefficients of friction (less than 0.2) and low wear rates (less than 10(exp -7) mm(exp 2)/N-m), and thus, can be used effectively as wear-resistant, self-lubricating coatings for Si3N4 in the aforementioned two environments.

  18. Compilation of diamond-like carbon properties for barriers and hard coatings

    SciTech Connect

    Outka, D.A.; Hsu, Wen L.; Boehme, D.R.; Yang, N.Y.C.; Ottesen, D.K.; Johnsen, H.A.; Clift, W.M.; Headley, T.J.

    1994-02-01

    Diamond-like carbon (DLC) is an amorphous form of carbon which resembles diamond in its hardness, lubricity, and interest for hardness, lubricity, and resistance to chemical attack. Such properties make DLC of use in barrier and hard coating technology. This report examines a variety of properties of DLC coatings which are relevant to its use as a protective coating. This includes examining substrates on which DLC coatings can be deposited; the resistance of DLC coatings to various chemical agents; adhesion of DLC coatings; and characterization of DLC coatings by electron microscopy, FTIR, sputter depth profiling, stress measurements, and nanoindentation.

  19. Compilation of diamond-like carbon properties for barriers and hard coatings

    SciTech Connect

    Outka, D.A.; Hsu, Wen L.; Phillips, K.; Boehme, D.R.; Yang, N.Y.C.; Ottesen, D.K.; Johnsen, H.A.; Clift, W.M.; Headley, T.J.

    1994-05-01

    Diamond-like carbon (DLC) is an amorphous form of carbon which resembles diamond in its hardness, lubricity, and resistance to chemical attack. Such properties make DLC of interest for use in barrier and hard coating technology. This report examines a variety of properties of DLC coatings. This includes examining substrates on which DLC coatings can be deposited; the resistance of DLC coatings to various chemical agents; adhension of DLC coatings; and characterization of DLC coatings by electron microscopy, FTIR, sputter depth profiling, stress measurements and nanoindentation.

  20. Effect of pretreatment process parameters on diamond nucleation on unscratched silicon substrates coated with amorphous carbon films

    SciTech Connect

    Feng, Z.; Komvopoulos, K.; Bogy, D.B.; Ager, J.W. III; Anders, S.; Anders, A.; Wang, Z.; Brown, I.G.

    1996-01-01

    Diamond nucleation on unscratched silicon substrates was investigated using a conventional microwave plasma-enhanced chemical vapor deposition system. Silicon substrates were coated with thin films of amorphous carbon using a vacuum arc technique. The carbon-coated silicon substrates were pretreated with a methane-rich plasma at relatively low temperatures and were subsequently exposed to the diamond nucleation conditions. The significance of the pretreatment on the diamond nucleation density was examined by varying the methane concentration, chamber pressure, and exposure time. Scanning electron microscopy demonstrated that densely packed spherical nanoparticles on the pretreated surfaces played the role of diamond nucleation seeds. Raman spectroscopy analysis showed that the nucleation seeds consisted of nonhydrogenated carbon and that their structure was influenced by the pretreatment conditions. Transmission electron microscopy revealed that the nucleation seeds comprised disordered graphitic carbon and ultrafine diamond crystallites. Submicrometer films of good quality diamond possessing significantly higher nucleation densities ({approximately}5{times}10{sup 10} cm{sup -2}) were grown from nanoparticles produced under optimum pretreatment conditions. The enhancement of the diamond nucleation density is mainly attributed to the formation of a large number of nanoparticles, which provided sufficient high-surface free-energy sites for diamond nucleation, in conjunction with their high etching resistance to atomic hydrogen stemming from the significant percentage of {ital sp}{sup 3} atomic carbon configurations, as evidenced by the presence of nanocrystalline diamond in the nanoparticle structure. {copyright} {ital 1996 American Institute of Physics.}

  1. Effect of pretreatment process parameters on diamond nucleation on unscratched silicon substrates coated with amorphous carbon films

    NASA Astrophysics Data System (ADS)

    Feng, Z.; Komvopoulos, K.; Bogy, D. B.; Ager, J. W., III; Anders, S.; Anders, A.; Wang, Z.; Brown, I. G.

    1996-01-01

    Diamond nucleation on unscratched silicon substrates was investigated using a conventional microwave plasma-enhanced chemical vapor deposition system. Silicon substrates were coated with thin films of amorphous carbon using a vacuum arc technique. The carbon-coated silicon substrates were pretreated with a methane-rich plasma at relatively low temperatures and were subsequently exposed to the diamond nucleation conditions. The significance of the pretreatment on the diamond nucleation density was examined by varying the methane concentration, chamber pressure, and exposure time. Scanning electron microscopy demonstrated that densely packed spherical nanoparticles on the pretreated surfaces played the role of diamond nucleation seeds. Raman spectroscopy analysis showed that the nucleation seeds consisted of nonhydrogenated carbon and that their structure was influenced by the pretreatment conditions. Transmission electron microscopy revealed that the nucleation seeds comprised disordered graphitic carbon and ultrafine diamond crystallites. Submicrometer films of good quality diamond possessing significantly higher nucleation densities (˜5×1010 cm-2) were grown from nanoparticles produced under optimum pretreatment conditions. The enhancement of the diamond nucleation density is mainly attributed to the formation of a large number of nanoparticles, which provided sufficient high-surface free-energy sites for diamond nucleation, in conjunction with their high etching resistance to atomic hydrogen stemming from the significant percentage of sp3 atomic carbon configurations, as evidenced by the presence of nanocrystalline diamond in the nanoparticle structure.

  2. Hydrophilic property by contact angle change of ion implanted polycarbonate

    SciTech Connect

    Lee, Chan Young; Kil, Jae Keun

    2008-02-15

    In this study, ion implantation was performed onto a polymer, polycarbonate (PC), in order to investigate surface hydrophilic property through contact angle measurement. PC was irradiated with N, Ar, and Xe ions at the irradiation energy of 20-50 keV and the dose range of 5x10{sup 15}, 1x10{sup 16}, 7x10{sup 16} ions/cm{sup 2}. The contact angle of water was estimated by means of the sessile drop method and was reduced with increasing fluence and ion mass but increased with increasing implanted energy. The changes of chemical and structural properties are discussed in view of Furier transform infrared and x-ray photoelectron spectroscopy, which shows increasing C-O bonding and C-C bonding. The surface roughness examined by atomic force microscopy measurement changed smoothly from 3.59 to 2.22 A as the fluence increased. It is concluded that the change in wettability may be caused by surface carbonization and oxidation as well as surface roughness.

  3. Hydrophilic property by contact angle change of ion implanted polycarbonate.

    PubMed

    Lee, Chan Young; Kil, Jae Keun

    2008-02-01

    In this study, ion implantation was performed onto a polymer, polycarbonate (PC), in order to investigate surface hydrophilic property through contact angle measurement. PC was irradiated with N, Ar, and Xe ions at the irradiation energy of 20-50 keV and the dose range of 5x10(15), 1x10(16), 7x10(16) ions/cm(2). The contact angle of water was estimated by means of the sessile drop method and was reduced with increasing fluence and ion mass but increased with increasing implanted energy. The changes of chemical and structural properties are discussed in view of Furier transform infrared and x-ray photoelectron spectroscopy, which shows increasing C-O bonding and C-C bonding. The surface roughness examined by atomic force microscopy measurement changed smoothly from 3.59 to 2.22 A as the fluence increased. It is concluded that the change in wettability may be caused by surface carbonization and oxidation as well as surface roughness.

  4. Hydrophilic property by contact angle change of ion implanted polycarbonatea)

    NASA Astrophysics Data System (ADS)

    Lee, Chan Young; Kil, Jae Keun

    2008-02-01

    In this study, ion implantation was performed onto a polymer, polycarbonate (PC), in order to investigate surface hydrophilic property through contact angle measurement. PC was irradiated with N, Ar, and Xe ions at the irradiation energy of 20-50keV and the dose range of 5×1015, 1×1016, 7×1016ions/cm2. The contact angle of water was estimated by means of the sessile drop method and was reduced with increasing fluence and ion mass but increased with increasing implanted energy. The changes of chemical and structural properties are discussed in view of Furier transform infrared and x-ray photoelectron spectroscopy, which shows increasing C O bonding and C C bonding. The surface roughness examined by atomic force microscopy measurement changed smoothly from 3.59to2.22Å as the fluence increased. It is concluded that the change in wettability may be caused by surface carbonization and oxidation as well as surface roughness.

  5. Micron-scale coupled carbon isotope and nitrogen abundance variations in diamonds: Evidence for episodic diamond formation beneath the Siberian Craton

    NASA Astrophysics Data System (ADS)

    Wiggers de Vries, D. F.; Bulanova, G. P.; De Corte, K.; Pearson, D. G.; Craven, J. A.; Davies, G. R.

    2013-01-01

    The internal structure and growth history of six macro-diamonds from kimberlite pipes in Yakutia (Russia) were investigated with cathodoluminescence imaging and coupled carbon isotope and nitrogen abundance analyses along detailed core to rim traverses. The diamonds are characterised by octahedral zonation with layer-by-layer growth. High spatial resolution SIMS profiles establish that there is no exchange of the carbon isotope composition across growth boundaries at the μm scale and that isotopic variations observed between (sub)zones within the diamonds are primary. The macro-diamonds have δ13C values that vary within 2‰ of -5.3‰ and their nitrogen contents range between 0-1334 at. ppm. There are markedly different nitrogen aggregation states between major growth zones within individual diamonds that demonstrate Yakutian diamonds grew in multiple growth events. Growth intervals were punctuated by stages of dissolution now associated with <10 μm wide zones of nitrogen absent type II diamond. Across these resorption interfaces carbon isotope ratios and nitrogen contents record shifts between 0.5-2.3‰ and up to 407 at. ppm, respectively. Co-variation in δ13C value-nitrogen content suggests that parts of individual diamonds precipitated in a Rayleigh process from either oxidised or reduced fluids/melts, with two single diamonds showing evidence of both fluid types. Modelling the co-variation establishes that nitrogen is a compatible element in diamond relative to its growth medium and that the nitrogen partition coefficient is different between oxidised (3-4.1) and reduced (3) sources. The reduced sources have δ13C values between -7.3‰ and -4.6‰, while the oxidised sources have higher δ13C values between -5.8‰ and -1.8‰ (if grown from carbonatitic media) or between -3.8‰ and +0.2‰ (if grown from CO2-rich media). It is therefore concluded that individual Yakutian diamonds originate from distinct fluids/melts of variable compositions. The

  6. Interaction of carbon nanotubes and diamonds under hot-filament chemical vapor deposition conditions

    NASA Astrophysics Data System (ADS)

    Shankar, Nagraj

    A composite of CNTs and diamond can be expected to have unique mechanical, electrical and thermal properties due to the synergetic combination of the excellent properties of these two allotropes of carbon. The composite may find applications in various fields that require a combination of good mechanical, thermal, electrical and optical properties such as, wear-resistant coatings, thermal management of integrated chips (ICs), and field emission devices. This research is devoted to the experimental studies of phase stability of diamond and CNTs under chemical vapor deposition conditions to investigate the possibility of combining these materials to produce a hybrid composite. Growth of the hybrid material is investigated by starting with a pre-existing film of CNTs and subsequently growing diamond on it. The diamond growth phase space is systematically scanned to determine optimal conditions where diamond nucleates on the CNT without destroying it. Various techniques including SEM, TEM, and Micro Raman spectroscopy are used to characterize the hybrid material. A selective window where the diamond directly nucleates on the CNT without destroying the underlying CNT network is identified. Based on the material characterization, a growth mechanism based on etching of CNT at the defective sites to produce sp3 dangling bonds onto which diamond nucleates is proposed. Though a hybrid material is synthesized, the nucleation density of diamond on the CNTs is low and highly non-homogenous. Improvements to the CNT dispersion in the hybrid material are investigated in order to produce a homogenous material with predictable CNT loading fractions and to probe the low nucleation density of diamond on the CNT. The effect of several dispersion techniques and solvents on CNT surface homogeneity is studied using SEM, and a novel, vacuum drying based approach using CNT/dichlorobenzene dispersions is suggested. SEM and Raman analysis of the early stage nucleation are used to develop a

  7. Stability of the graphite and diamond phases of finite carbon cluster

    SciTech Connect

    Ree, F; Winter, N W

    1998-08-28

    The stability of particulate carbon formed in the detonation of high explosives has been investigated with first principles and semiempirical molecular orbital calculations carried out on carbon clusters. The dangling surface bonds were capped wit/r hydrogen atoms and the surface contributions to the cohesive energy were removed by extrapolation as a function of the cluster size. Comparison of the calculated heat of formation of graphite and diamond particles as a function of size predicts that the graphite phase becomes more stable for IO4 -10 carbon atoms. Calculations were also carried out on geometry optimized carbon clusters without capping atoms, resulting in reconstructed cluster surfaces that may be a more realislic model for particulate carbon formed under the extreme conditions of detonation. The calculated energy barrier for tbe conversion of a graphitic cluster to the cubic diamond structure was in good agreement with calculations on b

  8. Physical and tribological properties of diamond films grown in argon-carbon plasmas

    SciTech Connect

    Zuiker, C.; Krauss, A.R.; Gruen, D.M.; Pan, X.; Li, J.C.; Csencsits, R.; Erdemir, A.; Bindal, C.; Fenske, G.

    1995-06-01

    Nanocrystalline diamond films have been deposited using a microwave plasma consisting of argon, 2--10% hydrogen and a carbon precursor such as C{sub 60} or CH{sub 4}. It was found that it is possible to grow the diamond phase with both carbon precursors, although the hydrogen concentration in the plasma was 1--2 orders of magnitude lower than normally required in the absence of the argon. Auger electron spectroscopy, x-ray diffraction measurements and transmission electron microscopy indicate the films are predominantly composed of diamond. Surface roughness, as determined by atomic force microscopy and scanning electron microscopy indicate the nanocrystalline films grown in low hydrogen content plasmas grow exceptionally smooth (30--50 nm) to thicknesses of 10 {mu}m. The smooth nanocrystalline films result in low friction coefficients ({mu}=0.04--0.06) and low average wear rates as determined by pin-on-disk measurements.

  9. Diamond crystallization in a CO2-rich alkaline carbonate melt with a nitrogen additive

    NASA Astrophysics Data System (ADS)

    Khokhryakov, Alexander F.; Palyanov, Yuri N.; Kupriyanov, Igor N.; Nechaev, Denis V.

    2016-09-01

    Diamond crystallization was experimentally studied in a CO2-bearing alkaline carbonate melt with an increased content of nitrogen at pressure of 6.3 GPa and temperature of 1500 °C. The growth rate, morphology, internal structure of overgrown layers, and defect-impurity composition of newly formed diamond were investigated. The type of growth patterns on faces, internal structure, and nitrogen content were found to be controlled by both the crystallographic orientation of the growth surfaces and the structure of the original faces of diamond seed crystals. An overgrown layer has a uniform structure on the {100} plane faces of synthetic diamond and a fibrillar (fibrous) structure on the faceted surfaces of a natural diamond cube. The {111} faces have a polycentric vicinal relief with numerous twin intergrowths and micro twin lamellae. The stable form of diamond growth under experimental conditions is a curved-face hexoctahedron with small cube faces. The nitrogen impurity concentration in overgrown layers varies depending on the growth direction and surface type, from 100 to 1100 ppm.

  10. Catalyst-free synthesis of transparent, mesoporous diamond monoliths from periodic mesoporous carbon CMK-8

    SciTech Connect

    Zhang, Li; Mohanty, Paritosh; Coombs, Neil; Fei, Yingwei; Mao, Ho-kwang; Landskrom, Kai

    2010-07-19

    We report on the synthesis of optically transparent, mesoporous, monolithic diamond from periodic mesoporous carbon CMK-8 at a pressure of 21 GPa. The phase transformation is already complete at a mild synthesis temperature of 1,300 °C without the need of a catalyst. Surprisingly, the diamond is obtained as a mesoporous material despite the extreme pressure. X-ray diffraction, SEM, transmission electron microscopy, selected area electron diffraction, high-resolution transmission electron microscopy, and Z-contrast experiments suggest that the mesoporous diamond is composed of interconnected diamond nanocrystals having diameters around 5–10 nm. The Brunauer Emmett Teller surface area was determined to be 33 m2 g-1 according Kr sorption data. The mesostructure is diminished yet still detectable when the diamond is produced from CMK-8 at 1,600 °C and 21 GPa. The temperature dependence of the porosity indicates that the mesoporous diamond exists metastable and withstands transformation into a dense form at a significant rate due to its high kinetic inertness at the mild synthesis temperature. The findings point toward ultrahard porous materials with potential as mechanically highly stable membranes.

  11. Nanoscale triboactivity of functionalized c-Si surfaces by Fe+ ion implantation

    NASA Astrophysics Data System (ADS)

    Nunes, B.; Alves, E.; Colaço, R.

    2016-04-01

    In the present work, we present a study of the effect of Fe+ ion implantation on the tribological response at nanoscale contact lengths of crystalline silicon (c-Si) surfaces. (1 0 0) silicon wafers were implanted with Fe+ at a fluence of 2  ×  1017 cm-2, followed by annealing treatments at temperatures of 800 °C and 1000 °C. After microstructural characterization, nanoabrasive wear tests were performed with an atomic force microscope (AFM) using an AFM diamond tip with a stiff steel cantilever that enables the application of loads between 1 μN and 8 μN. After the nanowear tests, the same AFM was used to visualize and measure the worn craters. It was observed that the as-implanted samples present the poorest nanowear response, i.e. the highest wear rate, even higher than that of the unimplanted Si wafers used as a reference. Nevertheless, annealing treatments result in a measurable increase in the nanowear resistance. In this way we show that Fe+ ion implantation of c-Si, followed by the proper post-heat treatment, results in the formation of FeSi2 nanoprecipitates finely dispersed in a recrystallized matrix. This can be a valuable way of optimizing the nanotribological behavior of silicon.

  12. Diamond and Hydrogenated Carbons for Advanced Batteries and Fuel Cells: Fundamental Studies and Applications.

    SciTech Connect

    Swain; Greg M.

    2009-04-13

    The original funding under this project number was awarded for a period 12/1999 until 12/2002 under the project title Diamond and Hydrogenated Carbons for Advanced Batteries and Fuel Cells: Fundamental Studies and Applications. The project was extended until 06/2003 at which time a renewal proposal was awarded for a period 06/2003 until 06/2008 under the project title Metal/Diamond Composite Thin-Film Electrodes: New Carbon Supported Catalytic Electrodes. The work under DE-FG02-01ER15120 was initiated about the time the PI moved his research group from the Department of Chemistry at Utah State University to the Department of Chemistry at Michigan State University. This DOE-funded research was focused on (i) understanding structure-function relationships at boron-doped diamond thin-film electrodes, (ii) understanding metal phase formation on diamond thin films and developing electrochemical approaches for producing highly dispersed electrocatalyst particles (e.g., Pt) of small nominal particle size, (iii) studying the electrochemical activity of the electrocatalytic electrodes for hydrogen oxidation and oxygen reduction and (iv) conducting the initial synthesis of high surface area diamond powders and evaluating their electrical and electrochemical properties when mixed with a Teflon binder.

  13. Coesite-Diamond Assemblage in Ultrahigh Pressure Crustal and Mantle rocks: Evidence for Carbon Recycling

    NASA Astrophysics Data System (ADS)

    Sobolev, N. V.

    2010-12-01

    press, Contr. Min. Petr.). This extensive wide range in δ13C (PDB) for coesite-bearing diamonds, from -28 to +1.5 ‰, along with common crustal δ18O (SMOW) values from the principal rock-forming minerals (garnet and clinopyroxene) and accessory mineral (coesite), is typical for diamondiferous mantle eclogites, crustal UHPM rocks, and DIs. The petrogenetic evidences from all these rocks and minerals are indicative of major subduction of crustal protoliths (Ringwood, 1972, EPSL, 14:233), including the recycling of crustal carbon into diamonds in mantle eclogites, first speculated on by V.S. Sobolev and N.V. Sobolev (1980, Dokl. Akad. Nauk SSSR, 249: 1217).

  14. Diamond growth from subducted carbon implied by correlated δ18O-δ13C variations in diamonds and garnet inclusions

    NASA Astrophysics Data System (ADS)

    Ickert, R. B.; Stachel, T.; Harris, J. W.

    2011-12-01

    Much of our knowledge of the deep-Earth carbon cycle is derived from studies of diamond. The sources of carbon in the mantle and the mechanisms of transport and precipitation as diamond, however, are not entirely understood. Due to the chemical purity of diamond, scientific effort has focussed on syngenetic mineral inclusions and their relationship to their diamond hosts. For example, it is well known that, on a worldwide scale, diamonds with eclogitic inclusions have a distinct δ13C distribution when compared to more abundant peridotitic diamonds. Eclogitic diamonds have a distribution that extends from mantle-like δ13C values (ca. -5%), to very light carbon (<-20%). Strong 13C depletion has been explained by either invoking subducted organic carbon, or through high temperature isotopic fractionation of mantle carbon. Here we report high-precision SIMS δ18O measurements (2σ±< 0.3%) of eclogitic garnet inclusions in diamonds from the Damtshaa mine (Orapa cluster, Botswana). The δ13C values of the host diamond were determined to have a wide range (-4.4% to -18%; Deines et al. 2009; Lithos v.112 p776). From 15 inclusions, the δ18O variations range from +4.8 to +8.8 %. The relative 18O abundances are negatively correlated with the δ13C of the host diamonds, suggesting a link between high δ18O host rocks and low δ13C diamonds. Although fractionation of δ13C values is possible at high temperature, δ18O values are susceptible only to very small high temperature fractionations. For example, Cartigny et al. (2001, EPSL v.185 p85) suggested that CO2 degassing from a carbonate-bearing melt prior to diamond precipitation may be responsible for a δ13C distribution of eclogitic diamonds worldwide that is skewed to 13C depleted compositions. Our data place new constraints on that model. Depending on the C/O ratio of the melt, CO2 degassing will either have a negligible effect on the δ18O of the residual melt, or (at high C/O) induce a positive correlation between

  15. Argonne News Brief: Self-Healing Diamond-Like Carbon Coating Could Revolutionize Lubrication

    SciTech Connect

    2016-08-01

    Argonne scientists discovered a technique to create a layer of diamond-like carbon on the surfaces between moving parts. This could change the future of lubrication—potentially making engines more efficient, more reliable, and even greener (by reducing heavy metal additives needed in engine oils.)

  16. Surface Design and Engineering Toward Wear-Resistant, Self-Lubricating Diamond Films and Coatings

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1999-01-01

    The tribological properties of chemical-vapor-deposited (CVD) diamond films vary with the environment, possessing a Jekyll-and-Hyde character. CVD diamond has low coefficient of friction and high wear resistance in air but high coefficient of friction and low wear resistance in vacuum. Improving the tribological functionality of materials (such as achieving low friction and good wear resistance) was an aim of this investigation. Three studies on the surface design, surface engineering, and tribology of CVD diamond have shown that its friction and wear are significantly reduced in ultrahigh vacuum. The main criteria for judging whether diamond films are an effective wear-resistant, self-lubricating material were coefficient of friction and wear rate, which must be less than 0.1 and on the order of 10(exp 6) cu mm/N(dot)m, respectively. In the first study the presence of a thin film (less than 1 micron thick) of amorphous, nondiamond carbon (hydrogenated carbon, also called diamondlike carbon or DLC) on CVD diamond greatly decreased the coefficient of friction and the wear rate. Therefore, a thin DLC film on CVD diamond can be an effective wear-resistant, lubricating coating in ultrahigh vacuum. In the second study the presence of an amorphous, nondiamond carbon surface layer formed on CVD diamond by ion implantation significantly reduced the coefficient of friction and the wear rate in ultrahigh vacuum. Therefore, such surface layers are acceptable for effective self-lubricating, wear-resistant applications of CVD diamond. In the third study CVD diamond in contact with cubic boron nitride exhibited low coefficient of friction in ultra high vacuum. Therefore, this materials combination can provide an effective self-lubricating, wear-resistant couple in ultrahigh vacuum.

  17. Adhesion, cytoskeletal architecture and activation status of primary human macrophages on a diamond-like carbon coated surface.

    PubMed

    Linder, Stefan; Pinkowski, Wolfhard; Aepfelbacher, Martin

    2002-02-01

    Diamond-like carbon is a promising surface coating for biomedicinal implants like coronary stents or hip joints. Before widespread clinical use of this material, its biocompatibility has to be thoroughly assessed. Cells likely to encounter a diamond-like coated implant in the human body are cells of the monocytic lineage. Their interaction with the diamond-like carbon coated surface will probably critically influence the fate of the implant, as monocytes orchestrate inflammatory reactions and also affect osseointegration of implants. We therefore investigated adhesion, cytoarchitecture and activation status of primary human monocytes and their differentiated derivatives, macrophages, on diamond-like coated glass coverslips using immunofluorescence technique. We show that adhesion of primary monocytes to a diamond-like-coated coverslip is slightly, but not significantly, enhanced in comparison to uncoated coverslips, while the actin and microtubule cytoskeletons of mature macrophages show a normal development. The activation status of macrophages, as judged by polarization of the cell body, was not affected by growth on a diamond-like carbon surface. We conclude that diamond-like carbon shows good indications for biocompatibility to blood monocytes in vitro. It is therefore unlikely that contact with a diamond-like carbon coated surface in the human body will elicit inflammatory signals by these cells.

  18. Dosimetric characterization of a microDiamond detector in clinical scanned carbon ion beams.

    PubMed

    Marinelli, Marco; Prestopino, G; Verona, C; Verona-Rinati, G; Ciocca, M; Mirandola, A; Mairani, A; Raffaele, L; Magro, G

    2015-04-01

    To investigate for the first time the dosimetric properties of a new commercial synthetic diamond detector (PTW microDiamond) in high-energy scanned clinical carbon ion beams generated by a synchrotron at the CNAO facility. The detector response was evaluated in a water phantom with actively scanned carbon ion beams ranging from 115 to 380 MeV/u (30-250 mm Bragg peak depth in water). Homogeneous square fields of 3 × 3 and 6 × 6 cm(2) were used. Short- and medium-term (2 months) detector response stability, dependence on beam energy as well as ion type (carbon ions and protons), linearity with dose, and directional and dose-rate dependence were investigated. The depth dose curve of a 280 MeV/u carbon ion beam, scanned over a 3 × 3 cm(2) area, was measured with the microDiamond detector and compared to that measured using a PTW Advanced Markus ionization chamber, and also simulated using fluka Monte Carlo code. The detector response in two spread-out-Bragg-peaks (SOBPs), respectively, centered at 9 and 21 cm depths in water and calculated using the treatment planning system (TPS) used at CNAO, was measured. A negligible drift of detector sensitivity within the experimental session was seen, indicating that no detector preirradiation was needed. Short-term response reproducibility around 1% (1 standard deviation) was found. Only 2% maximum variation of microDiamond sensitivity was observed among all the evaluated proton and carbon ion beam energies. The detector response showed a good linear behavior. Detector sensitivity was found to be dose-rate independent, with a variation below 1.3% in the evaluated dose-rate range. A very good agreement between measured and simulated Bragg curves with both microDiamond and Advanced Markus chamber was found, showing a negligible LET dependence of the tested detector. A depth dose curve was also measured by positioning the microDiamond with its main axis oriented orthogonally to the beam direction. A strong distortion in Bragg

  19. Dosimetric characterization of a microDiamond detector in clinical scanned carbon ion beams

    SciTech Connect

    Marinelli, Marco; Prestopino, G. Verona, C.; Verona-Rinati, G.; Ciocca, M.; Mirandola, A.; Mairani, A.; Raffaele, L.; Magro, G.

    2015-04-15

    Purpose: To investigate for the first time the dosimetric properties of a new commercial synthetic diamond detector (PTW microDiamond) in high-energy scanned clinical carbon ion beams generated by a synchrotron at the CNAO facility. Methods: The detector response was evaluated in a water phantom with actively scanned carbon ion beams ranging from 115 to 380 MeV/u (30–250 mm Bragg peak depth in water). Homogeneous square fields of 3 × 3 and 6 × 6 cm{sup 2} were used. Short- and medium-term (2 months) detector response stability, dependence on beam energy as well as ion type (carbon ions and protons), linearity with dose, and directional and dose-rate dependence were investigated. The depth dose curve of a 280 MeV/u carbon ion beam, scanned over a 3 × 3 cm{sup 2} area, was measured with the microDiamond detector and compared to that measured using a PTW Advanced Markus ionization chamber, and also simulated using FLUKA Monte Carlo code. The detector response in two spread-out-Bragg-peaks (SOBPs), respectively, centered at 9 and 21 cm depths in water and calculated using the treatment planning system (TPS) used at CNAO, was measured. Results: A negligible drift of detector sensitivity within the experimental session was seen, indicating that no detector preirradiation was needed. Short-term response reproducibility around 1% (1 standard deviation) was found. Only 2% maximum variation of microDiamond sensitivity was observed among all the evaluated proton and carbon ion beam energies. The detector response showed a good linear behavior. Detector sensitivity was found to be dose-rate independent, with a variation below 1.3% in the evaluated dose-rate range. A very good agreement between measured and simulated Bragg curves with both microDiamond and Advanced Markus chamber was found, showing a negligible LET dependence of the tested detector. A depth dose curve was also measured by positioning the microDiamond with its main axis oriented orthogonally to the beam

  20. Carbon dimers on the diamond (100) surface : growth and nucleation.

    SciTech Connect

    Sternberg, M.; Zapol, P.; Curtiss, L. A.; Materials Science Division

    2003-11-01

    We use a density-functional based tight-binding method to study diamond growth by C{sub 2} on a nonhydrogenated diamond (100)-(2 x 1) surface. The study is motivated by advances in the growth of ultrananocrystalline diamond (UNCD) films under hydrogen-poor conditions. We identify and classify stable adsorbate configurations formed above dimer rows and troughs on the reconstructed surface. We also investigate adsorption and migration barriers using the nudged elastic band method. We find viable adsorption pathways leading to chain growth and step advancement. Initial depositions proceed without barriers into topologically imperfect configurations. The most stable configuration is a growth position that bridges two adjacent surface dimers along a dimer row. It is reached over a barrier of 1.2 eV and has an adsorption energy of -6.9 eV. Many other configurations exist that have adsorption energies differing by up to 2.7 eV. By comparison, analogous structures for silicon are fewer in number and closer in energy because Si lacks {pi} bonding, which is important for C{sub 2} on diamond. Migration barriers for ad-dimers are in the range of 2-3 eV due to relatively large differences in the energies of intermediate local minima. Comparing our results with previous studies on the (110) surface, we note that barriers leading to growth are higher and pathways are more complex on the (100) surface. The barriers suggest that reactions leading to both growth and re-nucleation are possible, which helps to understand the small observed grain sizes in UNCD.

  1. Room temperature ferromagnetism in low dose ion implanted counter-doped Ge:Mn, As

    NASA Astrophysics Data System (ADS)

    Donarelli, M.; Kazakova, O.; Ortolani, L.; Morandi, V.; Impellizzeri, G.; Priolo, F.; Passacantando, M.; Ottaviano, L.

    2017-10-01

    We demonstrate room-temperature ferromagnetism in germanium counter-doped with manganese and arsenic at concentrations up to approximately 2.1 × 1020 at/cm3: these values are one order of magnitude lower than those at which ferromagnetic behavior has previously been observed. Synthesis proceeded by ion implantation at 513 K followed by annealing in argon at 673 K. High resolution TEM, STEM, and EDX show single-phase diamond cubic material lacking Mn or As precipitates. These findings are consistent with the prediction of Chen et al. that counter-doping with approximately equal concentrations of a single-electron donor permits Mn, a two-electron acceptor, to be incorporated at high enough concentrations to yield a diluted magnetic semiconductor with a Curie temperature above room temperature.

  2. Accelerating degradation rate of pure iron by zinc ion implantation.

    PubMed

    Huang, Tao; Zheng, Yufeng; Han, Yong

    2016-12-01

    Pure iron has been considered as a promising candidate for biodegradable implant applications. However, a faster degradation rate of pure iron is needed to meet the clinical requirement. In this work, metal vapor vacuum arc technology was adopted to implant zinc ions into the surface of pure iron. Results showed that the implantation depth of zinc ions was about 60 nm. The degradation rate of pure iron was found to be accelerated after zinc ion implantation. The cytotoxicity tests revealed that the implanted zinc ions brought a slight increase on cytotoxicity of the tested cells. In terms of hemocompatibility, the hemolysis of zinc ion implanted pure iron was lower than 2%. However, zinc ions might induce more adhered and activated platelets on the surface of pure iron. Overall, zinc ion implantation can be a feasible way to accelerate the degradation rate of pure iron for biodegradable applications.

  3. Fe doped Magnetic Nanodiamonds made by Ion Implantation.

    PubMed

    Chen, ChienHsu; Cho, I C; Jian, Hui-Shan; Niu, H

    2017-02-09

    Here we present a simple physical method to prepare magnetic nanodiamonds (NDs) using high dose Fe ion-implantation. The Fe atoms are embedded into NDs through Fe ion-implantation and the crystal structure of NDs are recovered by thermal annealing. The results of TEM and Raman examinations indicated the crystal structure of the Fe implanted NDs is recovered completely. The SQUID-VSM measurement shows the Fe-NDs possess room temperature ferromagnetism. That means the Fe atoms are distributed inside the NDs without affecting NDs crystal structure, so the NDs can preserve the original physical and chemical properties of the NDs. In addition, the ion-implantation-introduced magnetic property might make the NDs to become suitable for variety of medical applications.

  4. Chromium plating pollution source reduction by plasma source ion implantation

    SciTech Connect

    Chen, A.; Sridharan, K.; Dodd, R.A.; Conrad, J.R.; Qiu, X.; Hamdi, A.H.; Elmoursi, A.A.; Malaczynski, G.W.; Horne, W.G.

    1995-12-31

    There is growing concern over the environmental toxicity and workers` health issues due to the chemical baths and rinse water used in the hard chromium plating process. In this regard the significant hardening response of chromium to nitrogen ion implantation can be environmentally beneficial from the standpoint of decreasing the thickness and the frequency of application of chromium plating. In this paper the results of a study of nitrogen ion implantation of chrome plated test flats using the non-line-of-sight Plasma Source Ion Implantation (PSII) process, are discussed. Surface characterization was performed using Scanning Electron Microscopy (SEM), Auger Electron Spectroscopy (AES), and Electron Spectroscopy for Chemical Analysis (ESCA). The surface properties were evaluated using a microhardness tester, a pin-on-disk wear tester, and a corrosion measurement system. Industrial field testing of nitrogen PSII treated chromium plated parts showed an improvement by a factor of two compared to the unimplanted case.

  5. Fe doped Magnetic Nanodiamonds made by Ion Implantation

    NASA Astrophysics Data System (ADS)

    Chen, Chienhsu; Cho, I. C.; Jian, Hui-Shan; Niu, H.

    2017-02-01

    Here we present a simple physical method to prepare magnetic nanodiamonds (NDs) using high dose Fe ion-implantation. The Fe atoms are embedded into NDs through Fe ion-implantation and the crystal structure of NDs are recovered by thermal annealing. The results of TEM and Raman examinations indicated the crystal structure of the Fe implanted NDs is recovered completely. The SQUID-VSM measurement shows the Fe-NDs possess room temperature ferromagnetism. That means the Fe atoms are distributed inside the NDs without affecting NDs crystal structure, so the NDs can preserve the original physical and chemical properties of the NDs. In addition, the ion-implantation-introduced magnetic property might make the NDs to become suitable for variety of medical applications.

  6. A novel method for effective sodium ion implantation into silicon.

    PubMed

    Lu, Qiu Yuan; Chu, Paul K

    2012-07-01

    Although sodium ion implantation is useful to the surface modification of biomaterials and nano-electronic materials, it is a challenging to conduct effective sodium implantation by traditional implantation methods due to its high chemical reactivity. In this paper, we present a novel method by coupling a Na dispenser with plasma immersion ion implantation and radio frequency discharge. X-ray photoelectron spectroscopy (XPS) depth profiling reveals that sodium is effectively implanted into a silicon wafer using this apparatus. The Na 1s XPS spectra disclose Na(2)O-SiO(2) bonds and the implantation effects are confirmed by tapping mode atomic force microscopy. Our setup provides a feasible way to conduct sodium ion implantation effectively.

  7. A novel method for effective sodium ion implantation into silicon

    SciTech Connect

    Lu Qiuyuan; Chu, Paul K.

    2012-07-15

    Although sodium ion implantation is useful to the surface modification of biomaterials and nano-electronic materials, it is a challenging to conduct effective sodium implantation by traditional implantation methods due to its high chemical reactivity. In this paper, we present a novel method by coupling a Na dispenser with plasma immersion ion implantation and radio frequency discharge. X-ray photoelectron spectroscopy (XPS) depth profiling reveals that sodium is effectively implanted into a silicon wafer using this apparatus. The Na 1s XPS spectra disclose Na{sub 2}O-SiO{sub 2} bonds and the implantation effects are confirmed by tapping mode atomic force microscopy. Our setup provides a feasible way to conduct sodium ion implantation effectively.

  8. Accelerating degradation rate of pure iron by zinc ion implantation

    PubMed Central

    Huang, Tao; Zheng, Yufeng; Han, Yong

    2016-01-01

    Pure iron has been considered as a promising candidate for biodegradable implant applications. However, a faster degradation rate of pure iron is needed to meet the clinical requirement. In this work, metal vapor vacuum arc technology was adopted to implant zinc ions into the surface of pure iron. Results showed that the implantation depth of zinc ions was about 60 nm. The degradation rate of pure iron was found to be accelerated after zinc ion implantation. The cytotoxicity tests revealed that the implanted zinc ions brought a slight increase on cytotoxicity of the tested cells. In terms of hemocompatibility, the hemolysis of zinc ion implanted pure iron was lower than 2%. However, zinc ions might induce more adhered and activated platelets on the surface of pure iron. Overall, zinc ion implantation can be a feasible way to accelerate the degradation rate of pure iron for biodegradable applications. PMID:27482462

  9. Fe doped Magnetic Nanodiamonds made by Ion Implantation

    PubMed Central

    Chen, ChienHsu; Cho, I. C.; Jian, Hui-Shan; Niu, H.

    2017-01-01

    Here we present a simple physical method to prepare magnetic nanodiamonds (NDs) using high dose Fe ion-implantation. The Fe atoms are embedded into NDs through Fe ion-implantation and the crystal structure of NDs are recovered by thermal annealing. The results of TEM and Raman examinations indicated the crystal structure of the Fe implanted NDs is recovered completely. The SQUID-VSM measurement shows the Fe-NDs possess room temperature ferromagnetism. That means the Fe atoms are distributed inside the NDs without affecting NDs crystal structure, so the NDs can preserve the original physical and chemical properties of the NDs. In addition, the ion-implantation-introduced magnetic property might make the NDs to become suitable for variety of medical applications. PMID:28181507

  10. Ion implantation for manufacturing bent and periodically bent crystals

    SciTech Connect

    Bellucci, Valerio; Camattari, Riccardo; Guidi, Vincenzo Mazzolari, Andrea; Paternò, Gianfranco; Lanzoni, Luca

    2015-08-10

    Ion implantation is proposed to produce self-standing bent monocrystals. A Si sample 0.2 mm thick was bent to a radius of curvature of 10.5 m. The sample curvature was characterized by interferometric measurements; the crystalline quality of the bulk was tested by X-ray diffraction in transmission geometry through synchrotron light at ESRF (Grenoble, France). Dislocations induced by ion implantation affect only a very superficial layer of the sample, namely, the damaged region is confined in a layer 1 μm thick. Finally, an elective application of a deformed crystal through ion implantation is here proposed, i.e., the realization of a crystalline undulator to produce X-ray beams.

  11. FIB and CVD Fabrication of Carbon Nanostructures on Diamond and Quartz Substrates

    DTIC Science & Technology

    2011-03-29

    areas of amorphous carbon and/or graphene films on diamond and quartz substrates using combination of graphitization/ CVD deposition/plasma etching...large area graphene synthesis , stability and purity. 31 Like other nanomaterials, carbon nanofilms provide advantage of having large active...induction is an effect working in chemical field-effect transistors. I.3. Direct Growth of Graphene on Quartz When performing experiments with growth of

  12. Ultrananocrystalline Diamond Integration with Pyrolytic Carbon Components of Mechanical Heart Valves

    PubMed Central

    Zeng, Hongjun; Yin, Wei; Catausan, Grace; Moldovan, Nicolaie; Carlisle, John

    2015-01-01

    In this report, an idea of integrating ultrananocrystalline diamond (UNCD) with pyrolytic carbon (PyC) –based mechanical heart valves, has been demonstrated. The report addresses the strategies to avoid graphitization and film delamination during the diamond coating. Raman and scratch tests showed that a UNCD film with high purity could adhere to the PyC substrate strongly. A thrombin generation study demonstrated an excellent biocompatibility of UNCD towards fresh human platelets. These results suggest that UNCD could be a good candidate of surface material for next generation heart valves and other implantable devices. PMID:26705376

  13. Synthesis and field emission properties of nanocrystalline diamond/carbon nanowall composite films

    SciTech Connect

    Teii, Kungen; Nakashima, Masahiro

    2010-01-11

    Nanostructured composite films consisting of almost vertically aligned graphene layers, so-called 'carbon nanowalls' (CNWs), and nanocrystalline diamond films are prepared by plasma-enhanced chemical vapor deposition. The space between the walls for the composite films is widened compared to simple CNWs by interception of in-plane continuity of the wall structures. The nucleation density of diamond is responsible for the spacing and arrangement of the walls. Field emission measurements show that the composite films have lower turn-on fields (approx1 V/mum) and larger field enhancement factors (approx4000) than simple CNWs. The results indicate that electric field screening between neighboring walls is well suppressed.

  14. SERS activity of Ag decorated nanodiamond and nano-β-SiC, diamond-like-carbon and thermally annealed diamond thin film surfaces.

    PubMed

    Kuntumalla, Mohan Kumar; Srikanth, Vadali Venkata Satya Siva; Ravulapalli, Satyavathi; Gangadharini, Upender; Ojha, Harish; Desai, Narayana Rao; Bansal, Chandrahas

    2015-09-07

    In the recent past surface enhanced Raman scattering (SERS) based bio-sensing has gained prominence owing to the simplicity and efficiency of the SERS technique. Dedicated and continuous research efforts have been made to develop SERS substrates that are not only stable, durable and reproducible but also facilitate real-time bio-sensing. In this context diamond, β-SiC and diamond-like-carbon (DLC) and other related thin films have been promoted as excellent candidates for bio-technological applications including real time bio-sensing. In this work, SERS activities of nanodiamond, nano-β-SiC, DLC, thermally annealed diamond thin film surfaces were examined. DLC and thermally annealed diamond thin films were found to show SERS activity without any metal nanostructures on their surfaces. The observed SERS activities of the considered surfaces are explained in terms of the electromagnetic enhancement mechanism and charge transfer resonance process.

  15. The effects of Ti carbonization on the nucleation and oriented growth of diamond films on cemented carbide.

    PubMed

    Yu, Xiang; Zhao, Xi-an; Liu, Ya-yun; Hua, Meng; Jiang, Xin

    2014-04-09

    To better understand the influence of carbonization of the Ti interlayer on diamond nucleation and growth, a series of Ti/diamond composite films were deposited on cemented carbide (WC:Co) substrates using a two-step deposition technique. The microstructural properties of the composite films were then characterized by scanning electron microscopy, X-ray diffractometry, and Raman spectroscopy, and their tribological properties were evaluated using a ball-on-disc tester and a metalloscope. The results showed that differences in carbonization for five Ti interlayers of different thicknesses led to variations in the preferred orientations of the TiC layers and in the subsequent nucleation and oriented growth of diamond. This suggests that Ti carbonization significantly influences the nucleation and growth of diamond and subsequently causes variations in the tribological properties of the produced diamond films.

  16. Ion Implanted GaAs I.C. Process Technology

    DTIC Science & Technology

    1981-07-01

    in ion implantation in GaAs, coupled with better control of the substrate material. 1 Once ion implantation became a reliable processing technology it... Processing Technology for Planar GaAs Integrated Circuits," GaAs IC Symposium, Lake Tahoe, CA., Sept. 1979. 20. R.C. Eden, "GaAs Integrated Circuit Device...1980. 25. B.M. Welch, "Advances in GaAs LSI!VLSI Processing Technology ," Sol. St. Tech., Feb. 1980, pp. 95-101. 27. R. Zucca, B.M. Welch, P.M

  17. Production technology for high efficiency ion implanted solar cells

    NASA Technical Reports Server (NTRS)

    Kirkpatrick, A. R.; Minnucci, J. A.; Greenwald, A. C.; Josephs, R. H.

    1978-01-01

    Ion implantation is being developed for high volume automated production of silicon solar cells. An implanter designed for solar cell processing and able to properly implant up to 300 4-inch wafers per hour is now operational. A machine to implant 180 sq m/hr of solar cell material has been designed. Implanted silicon solar cells with efficiencies exceeding 16% AM1 are now being produced and higher efficiencies are expected. Ion implantation and transient processing by pulsed electron beams are being integrated with electrostatic bonding to accomplish a simple method for large scale, low cost production of high efficiency solar cell arrays.

  18. A micro-structured ion-implanted magnonic crystal

    SciTech Connect

    Obry, Bjoern; Pirro, Philipp; Chumak, Andrii V.; Ciubotaru, Florin; Serga, Alexander A.; Hillebrands, Burkard; Braecher, Thomas; Osten, Julia; Fassbender, Juergen

    2013-05-20

    We investigate spin-wave propagation in a microstructured magnonic-crystal waveguide fabricated by localized ion implantation. The irradiation caused a periodic variation in the saturation magnetization along the waveguide. As a consequence, the spin-wave transmission spectrum exhibits a set of frequency bands, where spin-wave propagation is suppressed. A weak modification of the saturation magnetization by 7% is sufficient to decrease the spin-wave transmission in the band gaps by a factor of 10. These results evidence the applicability of localized ion implantation for the fabrication of efficient micron- and nano-sized magnonic crystals for magnon spintronic applications.

  19. The system ilmenite-carbonatite-carbon in the origin of diamond: Correlation between the titanium content and diamond potential of kimberlite

    NASA Astrophysics Data System (ADS)

    Litvin, Yu. A.; Bovkun, A. V.; Androsova, N. A.; Garanin, V. K.

    2017-03-01

    Experimental studies of melting relations in the system ilmenite-K-Na-Mg-Fe-Ca carbonatite-carbon at 8 GPa and 1600°C provide evidence for the effect of liquid immiscibility between ilmenite and carbonatite melts. It is shown that the solubility of ilmenite in carbonatitic melts is negligible and does not depend on its concentration in experimental samples within 25-75 wt %. However, carbonatite-carbon melts are characterized by a high diamond-forming efficiency. This means that the correlation between the concentration of TiO2 and diamond content is problematic for mantle chambers and requires further, more complex, experimental studies.

  20. Proceedings of the Seventh Applied Diamond Conference/Third Frontier Carbon Technology Joint Conference (ADC/FCT 2003)

    NASA Technical Reports Server (NTRS)

    Murakawa, M. (Editor); Miyoshi, K. (Editor); Koga, Y. (Editor); Schaefer, L. (Editor); Tzeng, Y. (Editor)

    2003-01-01

    These are the Proceedings of the Seventh Applied Diamond Conference/Third Frontier Carbon Technology Joint Conference held at Epochal Tsukuba International Conference Center from August 18 to 21, 2003. The diamond CVD process was first reported by Dr. Spitsyn in 1981 and Prof. S. Iijima reported his discovery of carbon nanotubes in 1991. In the past years, both diamond-related materials and novel carbon materials have attracted considerable interest by the scientific, technological, and industrial community. Many practical and commercial products of diamond materials are reported in these proceedings. A broad variety of applications of carbon nanotubes and novel carbons have also been explored and demonstrated. Having more than 175 invited and contributing papers by authors from over 18 countries for presentations at ADC/FCT 2003 clearly demonstrates that these materials, due to the combination of their superior properties, are both scientifically amazing and economically significant.

  1. Proceedings of the Sixth Applied Diamond Conference/Second Frontier Carbon Technology Joint Conference (ADC/FCT 2001)

    NASA Technical Reports Server (NTRS)

    Tzeng, Y. (Editor); Miyoshi, K. (Editor); Yoshikawa, M. (Editor); Murakawa, M. (Editor); Koga, Y. (Editor); Kobashi, K. (Editor); Amaratunga, G. A. J. (Editor)

    2001-01-01

    These are the Proceedings of the Sixth Applied Diamond Conference/Second Frontier Carbon Technology Joint Conference hosted by Auburn University from August 6 to 10, 2001. The diamond CVD process was first reported by Dr. Spitsyn in 1981 and Prof. S. Iijima reported his discovery of carbon nanotubes in 1991. In the past years, both diamond-related materials and novel carbon materials have attracted considerable interest by the scientific, technological, and industrial community. Many practical and commercial products of diamond materials are reported in these proceedings. A broad variety of applications of carbon nanotubes and novel carbons have also been explored and demonstrated. Having more than 200 invited and contributing papers by authors from over 20 countries for presentations at ADC/FCT 2001 clearly demonstrates that these materials, due to the combination of their superior properties, are both scientifically amazing and economically significant.

  2. The structure and tribological properties of gradient layers prepared by plasma-based ion implantation on 2024 Al alloy

    NASA Astrophysics Data System (ADS)

    Liao, J. X.; Xia, L. F.; Sun, M. R.; Liu, W. M.; Xu, T.; Xue, Q. J.

    2004-02-01

    Using plasma-based ion implantation, two types of gradient layers have been prepared on 2024 Al alloy. One is prepared by N-implantation then C-deposition, the other adds an interlayer composed of a Ti layer and a Ti-N layer between N-implantation and C-deposition. C-deposition is carried out at various implanting voltages or C2H2/H2 ratios. The composition depth profiles of these layers were characterized by x-ray photoelectron spectroscopy. The structure, morphologies and microstructure of the C layers were studied using Raman spectroscopy, atomic force microscope and transmission electron microscope, respectively. The surface hardness was measured with a Knoop tester and a mechanical property microprobe. The dry ball-on-disc wear tests were performed in ambient air. The gradient layer without interlayer is composed of an N-implanted layer rich in AlN and a diamond-like carbon (DLC) layer (film), and the two layers are connected with a C-Al transition layer containing Al4C3. The Ti layer rich in agr -Ti and the N-implanted layer are connected by a Ti-Al transition layer containing TiAl3, while the Ti-N layer rich in TiN and the DLC film are connected by a C-Ti transition layer containing TiC, TiCN, etc. Thus, the gradient layer with interlayers has optimized the gradient structure. DLC films are compact and amorphous, contain high sp3/sp2 ratios and depend on the implanting voltage and the C2H2/H2 ratio. Similarly, these gradient layers exhibit significant improvement in morphologies, surface hardness and tribological properties; the interlayer, the implanting voltage and the C2H2/H2 ratio all have prominent effects on these properties.

  3. The effects of carbon and nitrogen isotopes on the `N3' optical transition in diamond

    NASA Astrophysics Data System (ADS)

    Davies, Gordon; Kiflawi, I.; Sittas, G.; Kanda, H.

    1997-05-01

    The N3 centre in diamond consists of three nitrogen atoms and one vacancy. We show that the N3 zero-phonon line, at 2.985 eV in natural diamond, is shifted by 0953-8984/9/19/008/img6 in 0953-8984/9/19/008/img7 diamond doped with 0953-8984/9/19/008/img8, with no detectable change in the vibronic bandshape. In 0953-8984/9/19/008/img9 diamond, the energies of all the phonons seen in the vibronic band appear to be reduced from 0953-8984/9/19/008/img7 diamond in the ratio 0953-8984/9/19/008/img11, and the zero-phonon is shifted by 0953-8984/9/19/008/img12. The carbon isotope shift can be understood in terms of contributions from the lattice expansion, of 0953-8984/9/19/008/img13 from the different vibrational frequencies in the ground and excited electronic states, and 0953-8984/9/19/008/img14 from the Jahn - Teller effect in the excited state.

  4. X-ray induced photocurrent characteristics of CVD diamond detectors with different carbon electrodes

    NASA Astrophysics Data System (ADS)

    Schirru, F.; Lohstroh, A.; Jayawardena, K. D. G. I.; Henley, S. J.; Sellin, P. J.

    2013-12-01

    Diamond has unique properties which make it suitable for a broad range of radiation detection applications ranging from particle timing and spectroscopy, to neutron, UV and X-ray sensors. In X-ray dosimetry, the atomic number of diamond (Z = 6) close to that of the human tissues (Z = 7.42) allows to mimic the real absorbed dose avoiding off-line recalculations. Moreover, its low atomic number and the capability to withstand high radiation fluxes make possible its use as beam monitor without altering significantly the properties of the interacting beam. To preserve the tissue equivalence of the diamond and minimize the perturbation and absorption of the incident beam, diamond detectors based on low thickness and low atomic number electrodes become a requirement. In this paper we present the X-ray detection characteristics of electronic grade CVD diamond sensors prepared in house with thin amorphous carbon electrodes fabricated by Pulsed Laser Deposition (PLD) technique in the fluence range of 2.3-3.6 J·cm-2. The devices showed a linear dependence of the induced photocurrent respect to the dose rate. Also, best dynamic response and better stability of the signals were achieved for applied bias up to ±50 V with signal to noise ratio (SNR) of ~ 300.

  5. Superlow friction behavior of diamond-like carbon coatings: Time and speed effects

    NASA Astrophysics Data System (ADS)

    Heimberg, J. A.; Wahl, K. J.; Singer, I. L.; Erdemir, A.

    2001-04-01

    The friction behavior of a diamond-like carbon coating was studied in reciprocating sliding contact at speeds from 0.01 to 5 mm/s, in dry nitrogen. "Superlow" friction coefficients of 0.003-0.008 were obtained in continuous sliding at the higher speeds (>1 mm/s). However, friction coefficients rose to values typical of diamond-like carbon in dry and ambient air (0.01-0.1) at lower speeds (<0.5 mm/s) as well as in time-delayed, higher speed tests. The rise of the friction coefficients in both speed and time-delay tests was in good quantitative agreement with gas adsorption kinetics predicted by the Elovich equation for adsorption onto carbon. More generally, superlow friction could be sustained, suppressed, and recovered as a function of exposure time, demonstrating that duty cycle cannot be ignored when predicting performance of superlow friction coatings in devices.

  6. Electrochemical Behavior of Carbon Nanostructured Electrodes: Graphene, Carbon Nanotubes, and Nanocrystalline Diamond

    NASA Astrophysics Data System (ADS)

    Raut, Akshay Sanjay

    The primary goals of this research were to investigate the electrochemical behavior of carbon nanostructures of varying morphology, identify morphological characteristics that improve electrochemical capacitance for applications in energy storage and neural stimulation, and engineer and characterize a boron-­doped diamond (BDD) electrode based electrochemical system for disinfection of human liquid waste. Carbon nanostructures; ranging from vertically aligned multiwalled carbon nanotubes (MWCNTs), graphenated carbon nanotubes (g-­CNTs) to carbon nanosheets (CNS); were synthesized using a MPECVD system. The nanostructures were characterized by using scanning electron microscopy (SEM) and Raman spectroscopy. In addition to employing commonly used electrochemical techniques such as cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS), a new technique was developed to evaluate the energy and power density of individual electrodes. This facilitated comparison of a variety of electrode materials without having to first develop complex device packaging schemes. It was found that smaller pore size and higher density of carbon foliates on a three-dimensional scaffold of carbon nanotubes increased specific capacitance. A design of experiments (DOE) study was conducted to explore the parametric space of the MWCNT system. A range of carbon nanostructures of varying morphology were obtained. It was observed that the capacitance was dependent on defect density. Capacitance increased with defect density. A BDD electrode was characterized for use in a module designed to disinfect human liquid waste as a part of a new advanced energy neutral, water and additive-free toilet designed for treating waste at the point of source. The electrode was utilized in a batch process system that generated mixed oxidants from ions present in simulated urine and inactivated E. Coli bacteria. Among the mixed oxidants, the concentration of chlorine species was measured and was

  7. Homogenization of carbonate-bearing microinclusions in diamond at P- T parameters of the upper mantle

    NASA Astrophysics Data System (ADS)

    Ragozin, A. L.; Palyanov, Yu. N.; Zedgenizov, D. A.; Kalinin, A. A.; Shatsky, V. S.

    2016-10-01

    The staged high-pressure annealing of natural cubic diamonds with numerous melt microinclusions from the Internatsional'naya kimberlite pipe was studied experimentally. The results mainly show that the carbonate phases, the daughter phases in partially crystallized microinclusions in diamonds, may undergo phase transformations under the mantle P- T conditions. Most likely, partial melting and further dissolution of dolomite in the carbonate-silicate melt (homogenization of inclusions) occur in inclusions. The experimental data on the staged high-pressure annealing of diamonds with melt microinclusions allow us to estimate the temperature of their homogenization as 1400-1500°C. Thus, cubic diamonds from the Internatsional'naya pipe could have been formed under quite high temperatures corresponding to the lithosphere/asthenosphere boundary. However, it should be noted that the effect of selective capture of inclusions with partial loss of volatiles in relation to the composition of the crystallization medium is not excluded during the growth. This may increase the temperature of their homogenization significantly between 1400 and 1500°C.

  8. Dual-ion-beam deposition of carbon films with diamond-like properties

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.; Swec, D. M.; Angus, J. C.

    1985-01-01

    A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamond like films generated by sputtering a graphite target.

  9. On diamond, graphitic and amorphous carbons in primitive extraterrestrial solar system materials

    NASA Technical Reports Server (NTRS)

    Rietmeijer, Frans J. M.

    1990-01-01

    Carbon is among the most abundant elements in the universe and carbon chemistry in meteorites and comets is an important key to understanding many Solar System and interstellar processes. Yet, the mineralogical properties and interrelations between various structural forms of elemental carbon remain ambiguous. Crystalline elemental carbons include rhombohedral graphite, hexagonal graphite, cubic diamond, hexagonal diamond (i.e., lonsdaleite or carbon-2H) and chaoite. Elemental carbon also occurs as amorphous carbon and poorly graphitized (or turbostratic) carbon but of all the forms of elemental carbon only graphite is stable under physical conditions that prevail in small Solar System bodies and in the interstellar medium. The recent discovery of cubic diamond in carbonaceous chondrites and hexagonal diamond in chondritic interplanetary dust particles (IDPs) have created a renewed interest in the crystalline elemental carbons that were not formed by shock processes on a parent body. Another technique, Raman spectroscopy, confirms a widespread occurrence of disordered graphite in the Allende carbonaceous chondrite and in chondritic IDPs. Elemental carbons have also been identified by their characteristic K-edge features in electron energy loss spectra (EELS). However, the spectroscopic data do not necessarily coincide with those obtained by selected area electron diffraction (SAED). In order to interpret these data in terms of rational crystalline structures, it may be useful to consider the principles underlying electron diffraction and spectroscopic analyses. Electron diffraction depends on electron scattering, on the type of atom and the distance between atoms in a crystal lattice. Spectroscopic data are a function of the type of atom and the energy of bonds between atoms. Also, SAED is a bulk sampling technique when compared to techniques such as Raman spectroscopy or EELS. Thus, it appears that combined analyses provide contradictory results and that amorphous

  10. On diamond, graphitic and amorphous carbons in primitive extraterrestrial solar system materials

    NASA Technical Reports Server (NTRS)

    Rietmeijer, Frans J. M.

    1990-01-01

    Carbon is among the most abundant elements in the universe and carbon chemistry in meteorites and comets is an important key to understanding many Solar System and interstellar processes. Yet, the mineralogical properties and interrelations between various structural forms of elemental carbon remain ambiguous. Crystalline elemental carbons include rhombohedral graphite, hexagonal graphite, cubic diamond, hexagonal diamond (i.e., lonsdaleite or carbon-2H) and chaoite. Elemental carbon also occurs as amorphous carbon and poorly graphitized (or turbostratic) carbon but of all the forms of elemental carbon only graphite is stable under physical conditions that prevail in small Solar System bodies and in the interstellar medium. The recent discovery of cubic diamond in carbonaceous chondrites and hexagonal diamond in chondritic interplanetary dust particles (IDPs) have created a renewed interest in the crystalline elemental carbons that were not formed by shock processes on a parent body. Another technique, Raman spectroscopy, confirms a widespread occurrence of disordered graphite in the Allende carbonaceous chondrite and in chondritic IDPs. Elemental carbons have also been identified by their characteristic K-edge features in electron energy loss spectra (EELS). However, the spectroscopic data do not necessarily coincide with those obtained by selected area electron diffraction (SAED). In order to interpret these data in terms of rational crystalline structures, it may be useful to consider the principles underlying electron diffraction and spectroscopic analyses. Electron diffraction depends on electron scattering, on the type of atom and the distance between atoms in a crystal lattice. Spectroscopic data are a function of the type of atom and the energy of bonds between atoms. Also, SAED is a bulk sampling technique when compared to techniques such as Raman spectroscopy or EELS. Thus, it appears that combined analyses provide contradictory results and that amorphous

  11. Photosensitivity enhancement of PLZT ceramics by positive ion implantation

    DOEpatents

    Peercy, P.S.; Land, C.E.

    1980-06-13

    The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface. Ions that are implanted include H/sup +/, He/sup +/, Ar/sup +/, and a preferred co-implant of Ar/sup +/ and Ne/sup +/. The positive ion implantation advantageously serves to shift the band gap energy threshold of the PLZT material from near-uv light to visible blue light. As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources. The method disclosed includes exposing the PLZT plate to these positive ions of sufficient density and with sufficient energy to provide an image. The PLZT material may have a lanthanum content ranging from 5 to 10%; a lead zirconate content ranging from 62 to 70 mole %; and a lead titanate content ranging from 38 to 30%. The region of ion implantation is in a range from 0.1 to 2 microns below the surface of the PLZT plate. Density of ions is in the range from 1 x 10/sup 12/ to 1 x 10/sup 17/ ions/cm/sup 2/ and having an energy in the range from 100 to 500 keV.

  12. A New Ion Implant Monitor Electrical Test Structure.

    DTIC Science & Technology

    1986-01-01

    In this paper, a new Ion Implant Monitor test structure and measurement method is reported. A direct measurement of the sheet resistance of the...probe measurements. Voltage measurements are directly converted to sheet resistance , thus measurements may be performed rapidly.

  13. Magnetic and Transport Properties of Mn-ion implanted Si

    NASA Astrophysics Data System (ADS)

    Preisler, V.; Ogawa, M.; Han, X.; Wang, K. L.

    2010-01-01

    We investigate the magnetic and transport properties of Mn-ion implanted Si. Both temperature dependent and field dependent measurements of the samples using a SQUID magnometer reveal ferromagnetic properties at room temperature. Magnetotransport measurements show a large positive magnetoresistance up to 4.5 T with no signs of saturation.

  14. Characterization of Ion Implanted and Laser Processed Wear Surfaces.

    DTIC Science & Technology

    1986-04-22

    Cavitation erosion tests were performed on nonimplanted and ion implanted samples of a Co’based hardface alloy (Stoody 3). Erosion of the test samples was...implanted samples of a Co-based hardface alloy (Stoody 3). Erosion of the test samples was found to initiate by debonding at the carbide-matrix interfaces

  15. Ion Implanted Passivated Contacts for Interdigitated Back Contacted Solar Cells

    SciTech Connect

    Young, David L.; Nemeth, William; LaSalvia, Vincenzo; Reedy, Robert; Bateman, Nicholas; Stradins, Pauls

    2015-06-14

    We describe work towards an interdigitated back contacted (IBC) solar cell utilizing ion implanted, passivated contacts. Formation of electron and hole passivated contacts to n-type CZ wafers using tunneling SiO2 and ion implanted amorphous silicon (a-Si) are described. P and B were ion implanted into intrinsic amorphous Si films at several doses and energies. A series of post-implant anneals showed that the passivation quality improved with increasing annealing temperatures up to 900 degrees C. The recombination parameter, Jo, as measured by a Sinton lifetime tester, was Jo ~ 14 fA/cm2 for Si:P, and Jo ~ 56 fA/cm2 for Si:B contacts. The contact resistivity for the passivated contacts, as measured by TLM patterns, was 14 milliohm-cm2 for the n-type contact and 0.6 milliohm-cm2 for the p-type contact. These Jo and pcontact values are encouraging for forming IBC cells using ion implantation to spatially define dopants.

  16. Silicon solar cells by ion implantation and pulsed energy processing

    NASA Technical Reports Server (NTRS)

    Kirkpatrick, A. R.; Minnucci, J. A.; Shaughnessy, T. S.; Greenwald, A. C.

    1976-01-01

    A new method for fabrication of silicon solar cells is being developed around ion implantation in conjunction with pulsed electron beam techniques to replace conventional furnace processing. Solar cells can be fabricated totally in a vacuum environment at room temperature. Cells with 10% AM0 efficiency have been demonstrated. High efficiency cells and effective automated processing capabilities are anticipated.

  17. Applications of ion implantation for high efficiency silicon solar cells

    NASA Technical Reports Server (NTRS)

    Minnucci, J. A.; Kirkpatrick, A. R.

    1977-01-01

    Ion implantation is utilized for the dopant introduction processes necessary to fabricate a silicon solar cell. Implantation provides a versatile powerful tool for development of high efficiency cells. Advantages and problems of implantation and the present status of developmental use of the technique for solar cells are discussed.

  18. Making CoSi(2) Layers By Ion Implantation

    NASA Technical Reports Server (NTRS)

    Namavar, Fereydoon

    1994-01-01

    Monolithic photovoltaic batteries containing vertical cells include buried CoSi(2) contact layers. Vertical-junction photovoltaic cells in series fabricated in monolithic structure. N- and p-doped silicon layers deposited epitaxially. The CoSi(2) layers, formed by ion implantation and annealing, serve as thin, low-resistance ohmic contacts between cells.

  19. Software for goniometer control in the Triple Ion Implantation Facility

    SciTech Connect

    Allen, W.R.

    1994-02-01

    A computer program is described tat controls the goniometer employed in the ion scattering chamber of the Triple Ion Implantation Facility (TIF) in the Metals and Ceramics Division at Oak Ridge National Laboratory. Details of goniometer operation and its incorporation into the ion scattering setup specific to the TIF are also discussed.

  20. Ion implantation induced nanotopography on titanium and bone cell adhesion

    NASA Astrophysics Data System (ADS)

    Braceras, Iñigo; Vera, Carolina; Ayerdi-Izquierdo, Ana; Muñoz, Roberto; Lorenzo, Jaione; Alvarez, Noelia; de Maeztu, Miguel Ángel

    2014-08-01

    Permanent endo-osseous implants require a fast, reliable and consistent osseointegration, i.e. intimate bonding between bone and implant, so biomechanical loads can be safely transferred. Among the parameters that affect this process, it is widely admitted that implant surface topography, surface energy and composition play an important role. Most surface treatments to improve osseointegration focus on micro-scale features, as few can effectively control the effects of the treatment at nanoscale. On the other hand, ion implantation allows controlling such nanofeatures. This study has investigated the nanotopography of titanium, as induced by different ion implantation surface treatments, its similarity with human bone tissue structure and its effect on human bone cell adhesion, as a first step in the process of osseointegration. The effect of ion implantation treatment parameters such as energy (40-80 keV), fluence (1-2 e17 ion/cm2) and ion species (Kr, Ar, Ne and Xe) on the nanotopography of medical grade titanium has been measured and assessed by AFM and contact angle. Then, in vitro tests have been performed to assess the effect of these nanotopographies on osteoblast adhesion. The results have shown that the nanostructure of bone and the studied ion implanted surfaces, without surface chemistry modification, are in the same range and that such modifications, in certain conditions, do have a statistically significant effect on bone tissue forming cell adhesion.

  1. Ion implantation of CdTe single crystals

    NASA Astrophysics Data System (ADS)

    Wiecek, Tomasz; Popovich, Volodymir; Bester, Mariusz; Kuzma, Marian

    2016-12-01

    Ion implantation is a technique which is widely used in industry for unique modification of metal surface for medical applications. In semiconductor silicon technology ion implantation is also widely used for thin layer electronic or optoelectronic devices production. For other semiconductor materials this technique is still at an early stage. In this paper based on literature data we present the main features of the implantation of CdTe single crystals as well as some of the major problems which are likely to occur when dealing with them. The most unexpected feature is the high resistance of these crystals against the amorphization caused by ion implantation even at high doses (1017 1/cm2). The second property is the disposal of defects much deeper in the sample then it follows from the modeling calculations. The outline of principles of the ion implantation is included in the paper. The data based on RBS measurements and modeling results obtained by using SRIM software were taken into account.

  2. Effect of amorphous carbon layers on the growth of diamond in dual-frequency plasma

    NASA Astrophysics Data System (ADS)

    Reinke, P.; Klemberg-Sapieha, J. E.; Martinu, L.

    1994-11-01

    In the present work we study the growth of diamond in a dual-mode microwave/radio frequency plasma. We investigate the effect of the thickness of predeposited hydrogenated amorphous carbon (a-C:H) films and of ion bombardment of the nucleation process and on the crystal quality. The deposits are characterized by x-ray photoelectron spectroscopy (XPS) and by scanning electron microscopy. The XPS spectra of the C(1s) carbon peak and of the plasmon features confirm the presence of an amorphous, carbonaceous phase and of silicon carbide on the surface. Radio frequency biasing during the initial stage of diamond growth leads to a lower crystal quality, but to a higher nucleation density N(sub D). Without biasing, good quality, predominantly (100) oriented diamond crystals are obtained on a Si(100) surface. The N(sub D) values are found to increase with the thickness of the predeposited a-C:H layer. Evolution of the nucleus size distributions indicates that the a-C:H film contributes to the carbon supply, enhancing the nucleation efficiency and shortening the incubation time of seed crystals. Before a continuous layer is formed, the growth of crystals is determined by the interaction with the gas phase as well as by the amount of carbon available on the surface.

  3. Development of vertical compact ion implanter for gemstones applications

    NASA Astrophysics Data System (ADS)

    Intarasiri, S.; Wijaikhum, A.; Bootkul, D.; Suwannakachorn, D.; Tippawan, U.; Yu, L. D.; Singkarat, S.

    2014-08-01

    Ion implantation technique was applied as an effective non-toxic treatment of the local Thai natural corundum including sapphires and rubies for the enhancement of essential qualities of the gemstones. Energetic oxygen and nitrogen ions in keV range of various fluences were implanted into the precious stones. It has been thoroughly proved that ion implantation can definitely modify the gems to desirable colors together with changing their color distribution, transparency and luster properties. These modifications lead to the improvement in quality of the natural corundum and thus its market value. Possible mechanisms of these modifications have been proposed. The main causes could be the changes in oxidation states of impurities of transition metals, induction of charge transfer from one metal cation to another and the production of color centers. For these purposes, an ion implanter of the kind that is traditionally used in semiconductor wafer fabrication had already been successfully applied for the ion beam bombardment of natural corundum. However, it is not practical for implanting the irregular shape and size of gem samples, and too costly to be economically accepted by the gem and jewelry industry. Accordingly, a specialized ion implanter has been requested by the gem traders. We have succeeded in developing a prototype high-current vertical compact ion implanter only 1.36 m long, from ion source to irradiation chamber, for these purposes. It has been proved to be very effective for corundum, for example, color improvement of blue sapphire, induction of violet sapphire from low value pink sapphire, and amelioration of lead-glass-filled rubies. Details of the implanter and recent implantation results are presented.

  4. Load-Bearing Biomedical Applications of Diamond-Like Carbon Coatings - Current Status

    PubMed Central

    Alakoski, Esa; Tiainen, Veli-Matti; Soininen, Antti; Konttinen, Yrjö T

    2008-01-01

    The current status of diamond-like carbon (DLC) coatings for biomedical applications is reviewed with emphasis on load-bearing coatings. Although diamond-like carbon coating materials have been studied for decades, no indisputably successful commercial biomedical applications for high load situations exist today. High internal stress, leading to insufficient adhesion of thick coatings, is the evident reason behind this delay of the break-through of DLC coatings for applications. Excellent adhesion of thick DLC coatings is of utmost importance for load-bearing applications. According to this review superior candidate material for articulating implants is thick and adherent DLC on both sliding surfaces. With the filtered pulsed arc discharge method, all the necessary requirements for the deposition of thick and adherent DLC are fulfilled, provided that the substrate material is selected properly. PMID:19478929

  5. Diamond-like carbon thin film for tuned high sensitivity etched fiber Bragg grating refractometer

    NASA Astrophysics Data System (ADS)

    Rente, Bruno; Barbosa, Carmem Lúcia; Serrão, Valdir Augusto; Franco, Marcos A. R.; Allil, Regina; Camargo, Sérgio S.; Werneck, Marcelo

    2015-09-01

    Deposition of thin diamond-like carbon films in etched fiber Bragg gratings as substrate was used to increase the sensitivity of a fiber Bragg grating refractometer. The nanometric film was also used for tuning the sensitivity to a maximum for a desired application of liquid refractive index measurement. Simulation and experiments were performed in order to understand the light propagation inside the modified optical fiber and its effects in the refractometry measurements.

  6. Does the Use of Diamond-Like Carbon Coating and Organophosphate Lubricant Additive Together Cause Excessive Tribochemical Material Removal?

    DOE PAGES

    Zhou, Yan; Leonard, Donovan N.; Meyer, Harry M.; ...

    2015-08-22

    We observe unexpected wear increase on a steel surface that rubbed against diamond-like carbon (DLC) coatings only when lubricated by phosphate-based antiwear additives. Contrary to the literature hypothesis of a competition between zinc dialkyldithiophosphate produced tribofilms and DLC-induced carbon transfer, here a new wear mechanism based on carbon-catalyzed tribochemical interactions supported by surface characterization is proposed

  7. Does the Use of Diamond-Like Carbon Coating and Organophosphate Lubricant Additive Together Cause Excessive Tribochemical Material Removal?

    SciTech Connect

    Zhou, Yan; Leonard, Donovan N.; Meyer, Harry M.; Luo, Huimin; Qu, Jun

    2015-08-22

    We observe unexpected wear increase on a steel surface that rubbed against diamond-like carbon (DLC) coatings only when lubricated by phosphate-based antiwear additives. Contrary to the literature hypothesis of a competition between zinc dialkyldithiophosphate produced tribofilms and DLC-induced carbon transfer, here a new wear mechanism based on carbon-catalyzed tribochemical interactions supported by surface characterization is proposed

  8. Characterisation of Diamond-Like Carbon (DLC) laser targets by Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Haddock, D.; Parker, T.; Spindloe, C.; Tolley, M.

    2016-04-01

    The search for target materials suitable for High Power Laser Experiments at ultralow thicknesses (below ten nanometres) is ongoing. Diamond-Like Carbon is investigated as an answer for a low-Z material that can survive target chamber pump-down and laser prepulse. DLC was produced using Plasma-Enhanced Chemical Vapour Deposition, using with varying gas flow mixtures of argon and methane. The methane plasma deposits amorphous carbon onto the substrate and the argon plasma re-sputters the weakly bonded carbon leaving a high proportion of diamond-like bonding. Bonding natures were probed using Raman spectroscopy; analysis of the resulting spectrum showed that flow rates of 40sccm/60sccm methane to argon produced DLC films with a diamond-like (sp 3) content of ∼20%. Increasing the methane gas flow decreased this value to less than 5%. DLC foils were processed into laser targets by method of float off; using a sodium chloride release layer and lowering into water, this was then lifted onto an array of apertures allowing for laser irradiation of the material with no backing. DLC with 20% sp 3 content showed superior yield when compared to other materials such as metals and some plastics of the same thickness, with ∼70% of the target positions surviving the float off procedure at <10nm. As a result of this work DLC targets have been available for a number of experiments at the Central Laser Facility.

  9. A light carbon reservoir recorded in zircon-hosted diamond from the Jack Hills.

    PubMed

    Nemchin, Alexander A; Whitehouse, Martin J; Menneken, Martina; Geisler, Thorsten; Pidgeon, Robert T; Wilde, Simon A

    2008-07-03

    The recent discovery of diamond-graphite inclusions in the Earth's oldest zircon grains (formed up to 4,252 Myr ago) from the Jack Hills metasediments in Western Australia provides a unique opportunity to investigate Earth's earliest known carbon reservoir. Here we report ion microprobe analyses of the carbon isotope composition of these diamond-graphite inclusions. The observed delta(13)C(PDB) values (expressed using the PeeDee Belemnite standard) range between -5 per mil and -58 per mil with a median of -31 per mil. This extends beyond typical mantle values of around -6 per mil to values observed in metamorphic and some eclogitic diamonds that are interpreted to reflect deep subduction of low-delta(13)C(PDB) biogenic surface carbon. Low delta(13)C(PDB) values may also be produced by inorganic chemical reactions, and therefore are not unambiguous evidence for life on Earth as early as 4,250 Myr ago. Regardless, our results suggest that a low-delta(13)C(PDB) reservoir may have existed on the early Earth.

  10. The role of nanographitic phase on enhancing the electron field emission properties of hybrid granular structured diamond films: the electron energy loss spectroscopic studies

    NASA Astrophysics Data System (ADS)

    Kurian, Joji; Jothiramalingam Sankaran, Kamatchi; Thomas, Joseph P.; Tai, N. H.; Chen, Huang-Chin; Lin, I.-Nan

    2014-10-01

    The electron field emission (EFE) properties of the hybrid granular structured diamond (HiD) films were markedly improved by N-ion implantation and annealing processes. The evolution of microstructure/bonding structure of the films due to these processes was investigated using the transmission electron microscopy (TEM) and the electron energy loss spectroscopy (EELS), respectively. The N-ion implanted/annealed HiD films showed a low turn-on field of (E0)HiD = 7.4 V µm-1 with large current density of (Je)HiD = 600 µA cm-2, at 17.8 V µm-1, compared with pristine HiD films ((E0) = 10.3 V µm-1, (Je) = 95 µA cm-2 at the same applied field). While the TEM studies revealed only the microstructural evolution due to N-ion implantation/annealing processes, the EELS elucidated the change in bonding structure, namely the transformation between the sp3-bonded carbons and the sp2-bonded ones. Therefore, the combined TEM/EELS analyses provided more insight into understand the mechanism by which the N-ion implantation/annealing processes enhanced the EFE properties of HiD films. These studies clearly demonstrated that the N-ion implantation/annealing processes induced the formation of nanographitic clusters. These nanographitic phases form an interconnected path throughout the film surface facilitating the easy transport of electrons and thereby markedly enhancing the EFE properties for the N implanted/annealed HiD films.

  11. Thermal Conductivity of Diamond Packed Electrospun PAN-Based Carbon Fibers Incorporated with Multi Wall Carbon Nanotubes.

    PubMed

    Dong, Qi; Lu, Chunyuan; Tulugan, Kelimu; Jin, Chunzi; Yoon, Soo Jong; Park, Yeong Min; Kim, Tae Gyu

    2016-02-01

    Multi wall carbon nanotubes (MWCNTs) and diamond are renowned as superlative material due to their relatively high thermal conductivity and hardness while comparing with any bulk materials. In this research, polyacrylonitrile (PAN) solution incorporated with MWCNTs at an alteration of mass fractions (0 wt%, 0.6 wt%, 1 wt%, 2 wt%) were fabricated via electrospinning under optimized parameters. Dried composite nanofibers were stabilized and carbonized, after which water base polytrafluorethylene (PTFE) mixed with nano diamond powder solution was spin coated on them. Scanning electron microscopy, Raman spectroscopy, X-ray scattering and Laserflash thermal conductivity were used to characterize the composite nanofiber sheets. The result shows that the thermal conductivity increased to 4.825 W/m K from 2.061 W/mK. The improvement of thermal conductivities is suggesting the incorporation of MWCNTs.

  12. Creation of deep blue light emitting nitrogen-vacancy center in nanosized diamond

    SciTech Connect

    Himics, L. Tóth, S.; Veres, M.; Koós, M.; Balogh, Z.

    2014-03-03

    This paper reports on the formation of complex defect centers related to the N3 center in nanosized diamond by employing plasma immersion and focused ion beam implantation methods. He{sup +} ion implantation into nanosized diamond “layer” was performed with the aim of creating carbon atom vacancies in the diamond structure, followed by the introduction of molecular N{sub 2}{sup +} ion and heat treatment in vacuum at 750 °C to initiate vacancy diffusion. To decrease the sp{sup 2} carbon content of nanosized diamond formed during the implantation processes, a further heat treatment at 450 °C in flowing air atmosphere was used. The modification of the bonding properties after each step of defect creation was monitored by Raman scattering measurements. The fluorescence measurements of implanted and annealed nanosized diamond showed the appearance of an intensive and narrow emission band with fine structures at 2.98 eV, 2.83 eV, and 2.71 eV photon energies.

  13. Ion Implantation Effects on the Metal-Semiconductor Interfaces.

    NASA Astrophysics Data System (ADS)

    Yapsir, Andrie Setiawan

    1988-12-01

    In this thesis, the effects of ion implantation on metal-semiconductor interfaces are studied. Hydrogen ions have been used as the implanted species. The implantation is carried out on Al/n-Si Schottky contacts. Electrical characterizations, deep level transient spectroscopy measurements, and the ^{15}N hydrogen profiling technique have been used to study the effects of ion implantation. It is demonstrated that the defect centers in the depletion region created by hydrogen implantation have more likely negative or possibly neutral signatures, rather than a positive signature as has been previously speculated. These negatively charged centers compensate for the positive donor resulting in a widening of the depletion region and reduction in the capacitance of the metal-semiconductor contacts. The tendency of hydrogen to passivate its own damage which results in the recovery of electronic transport across the metal-semiconductor junction upon low temperature heat treatment is also demonstrated. In connection with the behavior of hydrogen in silicon, in the second part of this thesis, detailed theoretical calculations on the hydrogen passivation of defects in silicon are carried out. A particular type of defect, namely, a substitutional sulfur in silicon, is chosen and is studied using the modified intermediate neglect of differential overlap (MINDO/3) molecular orbital method. It is found that the sulfur center can be passivated using one or two hydrogen atoms. The calculations indicate that the most stable positions of the hydrogen atoms are between the sulfur and its silicon neighbors. The hydrogens bond to the nearest silicon atoms and only weakly interact with the sulfur. Thermochemistry considerations predict that a single hydrogen passivates the sulfur center, provided these centers are in abundance in the silicon. Hydrogen ion implantation has also been carried out on Schottky contacts having a large difference in metal work function, Ti/p-Si and Pt

  14. Lithium Nitride Synthesized by in situ Lithium Deposition and Ion Implantation for Boron Neutron Capture Therapy

    NASA Astrophysics Data System (ADS)

    Ishitama, Shintaro; Baba, Yuji; Fujii, Ryo; Nakamura, Masaru; Imahori, Yoshio

    Li3N synthesis on Li deposition layer was conducted without H2O and O2 by in situ lithium deposition in high vacuum chamber of 10-6 Pa and ion implantation techniques and the thermo-chemical stability of the Li3N/Li/Cu tri-layered target for Boron Neutron Capture Therapy (BNCT) under laser heating and air exposure was characterized by X-ray photoelectron spectroscopy (XPS). Following conclusions were derived; (1) Li3N/Li/Cu tri-layered target with very low oxide and carbon contamination was synthesized by in situ lithium vacuum deposition and N2+ ion implantation without H2O and O2 additions, (2) The starting temperature of evaporation of Li3N/Li/Cu tri-layered target increased by 120K compared to that of the Li/Cu target and (3) Remarkable oxidation and carbon contamination were observed on the surface of Li3N/Li/Cu after air exposure and these contaminated compositions was not removed by Ar+ heavy sputtering.

  15. Method of synthesizing metal doped diamond-like carbon films

    NASA Technical Reports Server (NTRS)

    Ueno, Mayumi (Inventor); Sunkara, Mahendra Kumar (Inventor)

    2003-01-01

    A method of synthesizing metal doped carbon films by placing a substrate in a chamber with a selected amount of a metalorganic compound. An electron cyclotron resonance is applied to the chamber in order to vaporize the metalorganic compound. The resonance is applied to the chamber until a metal doped carbon film is formed. The metalorganic compound is preferably selected from the group consisting of an organic salt of ruthenium, palladium, gold or platinum.

  16. Proceedings of the conference on electrochemistry of carbon allotropes: Graphite, fullerenes and diamond

    SciTech Connect

    Kinoshita, K.; Scherson, D.

    1998-02-01

    This conference provided an opportunity for electrochemists, physicists, materials scientists and engineers to meet and exchange information on different carbon allotropes. The presentations and discussion among the participants provided a forum to develop recommendations on research and development which are relevant to the electrochemistry of carbon allotropes. The following topics which are relevant to the electrochemistry of carbon allotropes were addressed: Graphitized and disordered carbons, as Li-ion intercalation anodes for high-energy-density, high-power-density Li-based secondary batteries; Carbons as substrate materials for catalysis and electrocatalysis; Boron-doped diamond film electrodes; and Electrochemical characterization and electrosynthesis of fullerenes and fullerene-type materials. Abstracts of the presentations are presented.

  17. Single-wall carbon nanotubes under high pressures to 62 GPa studied using designer diamond anvils.

    PubMed

    Patterson, J R; Vohra, Y K; Weir, S T; Akella, J

    2001-06-01

    Single-wall carbon nanotube samples were studied under high pressures to 62 GPa using designer diamond anvils with buried electrical microprobes that allowed for monitoring of the four-probe electrical resistance at elevated pressure. After initial densification, the electrical resistance shows a steady increase from 3 to 42 GPa, followed by a sharp rise above 42 GPa. This sharp rise in electrical resistance at high pressures is attributed to opening of an energy band gap with compression. Nanoindentation hardness measurements on the pressure-treated carbon nanotube samples gave a hardness value of 0.50 +/- 0.03 GPa. This hardness value is approximately 2 orders of magnitude lower than the amorphous carbon phase produced in fullerenes under similar conditions. Therefore, the pressure treatment of single-wall carbon nanotubes to 62 GPa did not produce a superhard carbon phase.

  18. Preparation of boron doped diamond modified by iridium for electroreduction of carbon dioxide (CO2)

    NASA Astrophysics Data System (ADS)

    Ichzan, A. M.; Gunlazuardi, J.; Ivandini, T. A.

    2017-04-01

    Electroreduction of carbon dioxide (CO2) at iridium oxide-modified boron-doped diamond (IrOx-BDD) electrodes in aqueous electrolytes was studied by voltammetric method. The aim of this study was to find out the catalytic effect of IrOx to produce fine chemicals contained of two or more carbon atoms (for example acetic acid) in high percentage. Characterization using FE-SEM and XPS indicated that IrO2 can be deposited at BDD electrode, whereas characterization using cyclic voltammetry indicated that the electrode was applicable to be used as working electrode for CO2 electroreduction.

  19. Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate

    DOEpatents

    Feng, Z.; Brewer, M.; Brown, I.; Komvopoulos, K.

    1994-05-03

    A process is disclosed for the pretreatment of a carbon-coated substrate to provide a uniform high density of nucleation sites thereon for the subsequent deposition of a continuous diamond film without the application of a bias voltage to the substrate. The process comprises exposing the carbon-coated substrate, in a microwave plasma enhanced chemical vapor deposition system, to a mixture of hydrogen-methane gases, having a methane gas concentration of at least about 4% (as measured by partial pressure), while maintaining the substrate at a pressure of about 10 to about 30 Torr during the pretreatment. 6 figures.

  20. Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate

    DOEpatents

    Feng, Zhu; Brewer, Marilee; Brown, Ian; Komvopoulos, Kyriakos

    1994-01-01

    A process is disclosed for the pretreatment of a carbon-coated substrate to provide a uniform high density of nucleation sites thereon for the subsequent deposition of a continuous diamond film without the application of a bias voltage to the substrate. The process comprises exposing the carbon-coated substrate, in a microwave plasma enhanced chemical vapor deposition system, to a mixture of hydrogen-methane gases, having a methane gas concentration of at least about 4% (as measured by partial pressure), while maintaining the substrate at a pressure of about 10 to about 30 Torr during the pretreatment.

  1. Hybrid Quantum Device with Nitrogen-Vacancy Centers in Diamond Coupled to Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Li, Peng-Bo; Xiang, Ze-Liang; Rabl, Peter; Nori, Franco

    2016-07-01

    We show that nitrogen-vacancy (NV) centers in diamond interfaced with a suspended carbon nanotube carrying a dc current can facilitate a spin-nanomechanical hybrid device. We demonstrate that strong magnetomechanical interactions between a single NV spin and the vibrational mode of the suspended nanotube can be engineered and dynamically tuned by external control over the system parameters. This spin-nanomechanical setup with strong, intrinsic, and tunable magnetomechanical couplings allows for the construction of hybrid quantum devices with NV centers and carbon-based nanostructures, as well as phonon-mediated quantum information processing with spin qubits.

  2. Carbon nanoscrolls on the surface of nanocrystalline graphite and diamond films

    SciTech Connect

    Skovorodnikov, N. O. Malykhin, S. A.; Tuyakova, F. T.; Ismagilov, R. R.; Obraztsov, A. N.

    2015-07-15

    Nanocrystalline graphite and diamond films with needlelike nanostructures on their surface have been obtained by plasma-enhanced chemical vapor deposition. According to the experimental data, these aggregates have the same nature for films of both types: they are tubular carbon nanoscrolls with a polygonal cross section. Nanoscrolls are formed by a helically folded graphene sheet; they look like twisted prisms. The needlelike prismatic structures have an average diameter in the range of 50‒500 nm, and their length reaches several micrometers. Possible mechanisms of formation of carbon nanostructures are discussed.

  3. Origin of Ultra-Deep Diamonds: Chemical Interaction of Ca-CARBONATE and the Earth's Lower Mantle Minerals

    NASA Astrophysics Data System (ADS)

    Spivak, A. V.; Dubrovinsky, L. S.; Litvin, Yu. A.

    2012-04-01

    The main goal of the work is experimental study of physicochemical conditions of origin of ultra-deep diamonds in the substance of the Earth's lower mantle (LM) based on the experimental criterium of syngenesis of diamond and primary inclusions of LM mineral. Magnesiowustite (Mg,Fe)O, Mg-Fe perovskite (Mg,Fe)(Si,Al)O3 and Ca-perovskite CaSiO3 mainly present the LM substance and are frequently disclosed as primary inclusions in ultra-deep diamonds together with Ca-, (Ca, Mg, Fe)-, Na-Ca-carbonates. For the upper mantle conditions, the mantle-carbonatite conception of diamond genesis was developed based on the effects of congruent melting of carbonates and complete liquid miscibility of carbonate-silicate melts. Melting of Ca-carbonate and CaCO3 - (Mg,Fe)O, CaCO3 - (Mg,Fe)(Si,Al)O3 systems, stability of the melts and their decomposition were studied in static high pressure experiments at pressures of 16 to 55 GPa and temperatures of 1600 to 3900 K using diamond anvil cell technique with laser heating. It was determined that melting of Ca-carbonate is congruent at the PT-conditions of the lower mantle and characterized by an expanded field of liquid Ca-carbonate phase. We observed formation of graphite (below 16 GPa) and diamond (between 16 and 43 GPa) on decomposition of the CaCO3 melt at temperatures above 3400 K. At temperatures below 3400 K congruent melting of calcium carbonate was confirmed. Also it was shown that CaCO3 - (Mg,Fe)O - (Mg,Fe)(Si,Al)O3 system is capable to form diamonds together with Ca-carbonate, magnesiowustite and perovskite as syngenesis minerals at PT-conditions of the lower mantle. We observed formation diamond (between 40 and 55 GPa) on decomposition of the CaCO3 from CaCO3 - (Mg,Fe)(Si,Al)O3 melt at temperatures above 2000 K. The experimental data on phase relations at the melting and decomposition of CaCO3 and CaCO3-(Mg,Fe)O-(Mg,Fe)(Si,Al)O3 system as well as diamond crystallization are applied to the problem of formation of natural ultra

  4. Diamond formation by carbon saturation in C-O-H fluids during cold subduction of oceanic lithosphere

    NASA Astrophysics Data System (ADS)

    Frezzotti, Maria-Luce; Huizenga, Jan-Marten; Compagnoni, Roberto; Selverstone, Jane

    2014-10-01

    Microdiamonds in garnet of graphite-free ultrahigh pressure metamorphic (UHPM) rocks from Lago di Cignana (western Alps, Italy) represent the first occurrence of diamond in a low-temperature subduction complex of oceanic origin (T = ∼600 °C; P ⩾ 3.2 GPa). The presence of diamonds in fluid inclusions provides evidence for carbon transport and precipitation in an oxidized H2O-rich C-O-H crustal fluid buffered by mineral equilibria at sub-arc mantle depths. The structural state of carbon in fluid-precipitated diamonds was analyzed with 514 nm excitation source confocal Raman microspectroscopy. The first order peak of sp3-bonded carbon in crystalline diamonds lies at 1331 (±2) cm-1, similar to diamonds in other UHPM terranes. The analysis of the spectra shows additional Raman features due to sp2 carbon phases indicating the presence of both hydrogenated carbon (assigned to trans-polyacetylene segments) in grain boundaries, and graphite-like amorphous carbon in the bulk, i.e. showing a structural disorder much greater than that found in graphite of other UHPM rocks. In one rock sample, disordered microdiamonds are recognized inside fluid inclusions by the presence of a weaker and broader Raman band, downshifted from 1332 to 1328 cm-1. The association of sp3- with sp2-bonded carbon indicates variable kinetics during diamond precipitation. We suggest that precipitation of disordered sp2 carbon acted as a precursor for diamond formation outside the thermodynamic stability field of crystalline graphite. Diamond formation started when the H2O-rich fluid reached the excess concentration of C required for the spontaneous nucleation of diamond. The interplay of rock buffered fO2 and the prograde P-T path at high pressures controlled carbon saturation. Thermodynamic modeling confirms that the C-O-H fluids from which diamond precipitated must have been water rich (0.992

  5. Method and apparatus for plasma source ion implantation

    DOEpatents

    Conrad, J.R.

    1988-08-16

    Ion implantation into surfaces of three-dimensional targets is achieved by forming an ionized plasma about the target within an enclosing chamber and applying a pulse of high voltage between the target and the conductive walls of the chamber. Ions from the plasma are driven into the target object surfaces from all sides simultaneously without the need for manipulation of the target object. Repetitive pulses of high voltage, typically 20 kilovolts or higher, causes the ions to be driven deeply into the target. The plasma may be formed of a neutral gas introduced into the evacuated chamber and ionized therein with ionizing radiation so that a constant source of plasma is provided which surrounds the target object during the implantation process. Significant increases in the surface hardness and wear characteristics of various materials are obtained with ion implantation in this manner. 7 figs.

  6. Method and apparatus for plasma source ion implantation

    DOEpatents

    Conrad, John R.

    1988-01-01

    Ion implantation into surfaces of three-dimensional targets is achieved by forming an ionized plasma about the target within an enclosing chamber and applying a pulse of high voltage between the target and the conductive walls of the chamber. Ions from the plasma are driven into the target object surfaces from all sides simultaneously without the need for manipulation of the target object. Repetitive pulses of high voltage, typically 20 kilovolts or higher, causes the ions to be driven deeply into the target. The plasma may be formed of a neutral gas introduced into the evacuated chamber and ionized therein with ionizing radiation so that a constant source of plasma is provided which surrounds the target object during the implantation process. Significant increases in the surface hardness and wear characteristics of various materials are obtained with ion implantation in this manner.

  7. Observations of Ag diffusion in ion implanted SiC

    NASA Astrophysics Data System (ADS)

    Gerczak, Tyler J.; Leng, Bin; Sridharan, Kumar; Hunter, Jerry L.; Giordani, Andrew J.; Allen, Todd R.

    2015-06-01

    The nature and magnitude of Ag diffusion in SiC has been a topic of interest in connection with the performance of tristructural isotropic (TRISO) coated particle fuel for high temperature gas-cooled nuclear reactors. Ion implantation diffusion couples have been revisited to continue developing a more complete understanding of Ag fission product diffusion in SiC. Ion implantation diffusion couples fabricated from single crystal 4H-SiC and polycrystalline 3C-SiC substrates and exposed to 1500-1625 °C, were investigated by transmission electron microscopy and secondary ion mass spectrometry (SIMS). The high dynamic range of SIMS allowed for multiple diffusion régimes to be investigated, including enhanced diffusion by implantation-induced defects and grain boundary (GB) diffusion in undamaged SiC. Estimated diffusion coefficients suggest GB diffusion in bulk SiC does not properly describe the release observed from TRISO fuel.

  8. N + surface doping on nanoscale polymer fabrics via ion implantation

    NASA Astrophysics Data System (ADS)

    Ho Wong, Kenneth Kar; Zinke-Allmang, Martin; Wan, Wankei

    2006-08-01

    Non-woven poly(vinyl alcohol) (PVA) fabrics composed of small diameter (∼110 nm) fibers have been spun by an electrospinning technique and then have been modified by ion implantation. 1.7 MeV N+ ion implantation with a dose of 1.2 × 1016 ions/cm2 was applied on the fabrics through a metal foil at room temperature. By using scanning electron microscopy (SEM), no surface morphology degradation has been observed on the fabric after the ion beam treatment. The diameter of the fibers has shrunk by 30% to about 74 nm. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) show that nitrogen surface doping was achieved and the formation of two new functional chemical groups (N-Cdbnd O and C-N) in the PVA is observed.

  9. Ion-implanted laser annealed silicon solar cells

    NASA Technical Reports Server (NTRS)

    Katzeff, J. S.

    1980-01-01

    Development of low cost solar cells fabrication technology is being sponsored by NASA JPL as part of the Low Cost Solar Array Project (LSA). In conformance to Project requirements ion implantation and laser annealing were evaluated as junction formation techniques offering low cost-high throughput potential. Properties of cells fabricated utilizing this technology were analyzed by electrical, transmission electron microscopy, Rutherford backscattering and secondary ion mass spectrometry techniques. Tests indicated the laser annealed substrates to be damage free and electrically active. Similar analysis of ion implanted furnace annealed substrates revealed the presence of residual defects in the form of dislocation lines and loops with substantial impurity redistribution evident for some anneal temperature/time regimes. Fabricated laser annealed cells exhibited improved spectral response and conversion efficiency in comparison to furnace annealed cells. An economic projection for LSA indicates a potential for considerable savings from laser annealing technology.

  10. Ion implantation of graphene-toward IC compatible technologies.

    PubMed

    Bangert, U; Pierce, W; Kepaptsoglou, D M; Ramasse, Q; Zan, R; Gass, M H; Van den Berg, J A; Boothroyd, C B; Amani, J; Hofsäss, H

    2013-10-09

    Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for the first time directly that graphene can be doped with B and N via ion implantation and that the retention is in good agreement with predictions from calculation-based literature values. Atomic resolution high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites.

  11. Method of fabricating optical waveguides by ion implantation doping

    DOEpatents

    Appleton, Bill R.; Ashley, Paul R.; Buchal, Christopher J.

    1989-01-01

    A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO.sub.3 crystals are implanted with high concentrations of Ti dopant at ion energies of about 350 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000.degree. C. produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality single crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguides properties.

  12. Method of fabricating optical waveguides by ion implantation doping

    DOEpatents

    Appleton, B.R.; Ashley, P.R.; Buchal, C.J.

    1987-03-24

    A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO/sub 3/ crystals are implanted with high concentrations of Ti dopant at ion energies of about 360 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000/degree/C produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguiding properties.

  13. Observations of Ag diffusion in ion implanted SiC

    SciTech Connect

    Gerczak, Tyler J.; Leng, Bin; Sridharan, Kumar; Jerry L. Hunter, Jr.; Giordani, Andrew J.; Allen, Todd R.

    2015-03-17

    The nature and magnitude of Ag diffusion in SiC has been a topic of interest in connection with the performance of tristructural isotropic (TRISO) coated particle fuel for high temperature gas-cooled nuclear reactors. Ion implantation diffusion couples have been revisited to continue developing a more complete understanding of Ag fission product diffusion in SiC. Ion implantation diffusion couples fabricated from single crystal 4H-SiC and polycrystalline 3C-SiC substrates and exposed to 1500–1625°C, were investigated in this study by transmission electron microscopy and secondary ion mass spectrometry (SIMS). The high dynamic range of SIMS allowed for multiple diffusion régimes to be investigated, including enhanced diffusion by implantation-induced defects and grain boundary (GB) diffusion in undamaged SiC. Lastly, estimated diffusion coefficients suggest GB diffusion in bulk SiC does not properly describe the release observed from TRISO fuel.

  14. Conditions for forming composite carbon nanotube-diamond like carbon material that retain the good properties of both materials

    SciTech Connect

    Ren, Wei Avchaciov, Konstantin; Nordlund, Kai; Iyer, Ajai; Koskinen, Jari; Kaskela, Antti; Kauppinen, Esko I.

    2015-11-21

    Carbon nanotubes are of wide interest due to their excellent properties such as tensile strength and electrical and thermal conductivity, but are not, when placed alone on a substrate, well resistant to mechanical wear. Diamond-like carbon (DLC), on the other hand, is widely used in applications due to its very good wear resistance. Combining the two materials could provide a very durable pure carbon nanomaterial enabling to benefit from the best properties of both carbon allotropes. However, the synthesis of high-quality diamond-like carbon uses energetic plasmas, which can damage the nanotubes. From previous works it is neither clear whether the quality of the tubes remains good after DLC deposition, nor whether the DLC above the tubes retains the high sp{sup 3} bonding fraction. In this work, we use experiments and classical molecular dynamics simulations to study the mechanisms of DLC formation on various carbon nanotube compositions. The results show that high-sp{sup 3}-content DLC can be formed provided the deposition conditions allow for sidewards pressure to form from a substrate close beneath the tubes. Under optimal DLC formation energies of around 40–70 eV, the top two nanotube atom layers are fully destroyed by the plasma deposition, but layers below this can retain their structural integrity.

  15. Conditions for forming composite carbon nanotube-diamond like carbon material that retain the good properties of both materials

    NASA Astrophysics Data System (ADS)

    Ren, Wei; Iyer, Ajai; Koskinen, Jari; Kaskela, Antti; Kauppinen, Esko I.; Avchaciov, Konstantin; Nordlund, Kai

    2015-11-01

    Carbon nanotubes are of wide interest due to their excellent properties such as tensile strength and electrical and thermal conductivity, but are not, when placed alone on a substrate, well resistant to mechanical wear. Diamond-like carbon (DLC), on the other hand, is widely used in applications due to its very good wear resistance. Combining the two materials could provide a very durable pure carbon nanomaterial enabling to benefit from the best properties of both carbon allotropes. However, the synthesis of high-quality diamond-like carbon uses energetic plasmas, which can damage the nanotubes. From previous works it is neither clear whether the quality of the tubes remains good after DLC deposition, nor whether the DLC above the tubes retains the high sp3 bonding fraction. In this work, we use experiments and classical molecular dynamics simulations to study the mechanisms of DLC formation on various carbon nanotube compositions. The results show that high-sp3-content DLC can be formed provided the deposition conditions allow for sidewards pressure to form from a substrate close beneath the tubes. Under optimal DLC formation energies of around 40-70 eV, the top two nanotube atom layers are fully destroyed by the plasma deposition, but layers below this can retain their structural integrity.

  16. [Studies on the breeding by ion implantation and cultivation of mycophenolic acid producing strain].

    PubMed

    Liu, Mei; Zhang, Peng; Cui, Xiao-Lan; Ren, Xiao; Zhang, Hua

    2006-10-01

    Mycophenolic acid is produced by aerobic fermentation of several Penicillium species. It has a broad spectrum of activity like antitumor activity, antiviral, anti-psoriatic, immunosuppressive and anti-inflammatory activity. It also exhibits antibacterial and antifungal activities. The immunosuppressive effect of MPA has been important in treatment of organ rejection after organ transplant surgery. There is a continuous need to find improved process for efficiently obtaining superior MPA producing mutants. In recent years, the ion implantation technique has been widely applied in many fields and has been drawn morn concern. However there is no report in the field of mutational breeding of MPA producing strain. Penicillium brevicompactum M-51 was derived from MPA producing strain F-663 by varied mutational methods including U.V. and microwave irradiation. In the process of increasing the production of MPA from P. brevicompactum M-51, a mutant strain M-163 was obtained by means of N+ ion implantation. An decline-increase-decline tendency of strain survival rates was observed when the strain was implanted by N+ ion with dose from 20 2.6 x 10(13) ions/cm2 to 180 x 2.6 x 10(13) ions/cm2 under implantation energy 15 keV. It apparently appeared "saddle shape". And under the implantation dose of 140 x 2.6 x 10(13) ions/cm2, the variation rate and the positive variation rate of the strain had reached the highest values 88.9% and 63.4%, respectively. The HPLC results showed that MPA yield of P. brevicompactum M-163 was improved by 30.1%, and its productivity was rather stable through successive transfer of cultures. The effect of seed growth time on yield of MPA was studied, and the best seed age was 24h after incubation. In the mean time, the fermentative condition of M-163 was studied through orthogonal design. The major ingredients being investigated included carbon and nitrogen sources. Finally the optimized fermentation medium was obtained. The yield of MPA reached 2819g

  17. Surface characterization and orientation interaction between diamond- like carbon layer structure and dimeric liquid crystals

    NASA Astrophysics Data System (ADS)

    Naradikian, H.; Petrov, M.; Katranchev, B.; Milenov, T.; Tinchev, S.

    2017-01-01

    Diamond-like carbon (DLC) and amorphous carbon films are very promising type of semiconductor materials. Depending on the hybridization sp2/sp3 ratio, the material’s band gap varies between 0.8 and 3 eV. Moreover carbon films possess different interesting for practice properties: comparable to the Silicon, Diamond like structure has 22-time better thermal conductivity etc. Here we present one type of implementation of such type nanostructure. That is one attempt for orientation of dimeric LC by using of pre-deposited DLC layer with different ratio of sp2/sp3 hybridized carbon content. It could be expected a pronounced π1-π2interaction between s and p orbital levels on the surface and the dimeric ring of LC. We present comparison of surface anchoring strengths of both orientation inter-surfaces DLC/dimeric LC and single wall carbon nanotubes (SWCNT)/dimeric LC. The mechanism of interaction of dimeric LC and activated surfaces with DLC or SWCNT will be discussed. In both cases we have π-π interaction, which in combination with hydrogen bonding, typical for the dimeric LCs, influence the LC alignment. The Raman spectroscopy data evidenced the presence of charge transfer between contacting hexagonal rings of DLC and the C = O groups of the LC molecules.

  18. Corrosion resistance of titanium ion implanted AZ91 magnesium alloy

    SciTech Connect

    Liu Chenglong; Xin Yunchang; Tian Xiubo; Zhao, J.; Chu, Paul K.

    2007-03-15

    Degradable metal alloys constitute a new class of materials for load-bearing biomedical implants. Owing to their good mechanical properties and biocompatibility, magnesium alloys are promising in degradable prosthetic implants. The objective of this study is to improve the corrosion behavior of surgical AZ91 magnesium alloy by titanium ion implantation. The surface characteristics of the ion implanted layer in the magnesium alloys are examined. The authors' results disclose that an intermixed layer is produced and the surface oxidized films are mainly composed of titanium oxide with a lesser amount of magnesium oxide. X-ray photoelectron spectroscopy reveals that the oxide has three layers. The outer layer which is 10 nm thick is mainly composed of MgO and TiO{sub 2} with some Mg(OH){sub 2}. The middle layer that is 50 nm thick comprises predominantly TiO{sub 2} and MgO with minor contributions from MgAl{sub 2}O{sub 4} and TiO. The third layer from the surface is rich in metallic Mg, Ti, Al, and Ti{sub 3}Al. The effects of Ti ion implantation on the corrosion resistance and electrochemical behavior of the magnesium alloys are investigated in simulated body fluids at 37{+-}1 deg. C using electrochemical impedance spectroscopy and open circuit potential techniques. Compared to the unimplanted AZ91 alloy, titanium ion implantation significantly shifts the open circuit potential (OCP) to a more positive potential and improves the corrosion resistance at OCP. This phenomenon can be ascribed to the more compact surface oxide film, enhanced reoxidation on the implanted surface, as well as the increased {beta}-Mg{sub 12}Al{sub 17} phase.

  19. Arsenic ion implant energy effects on CMOS gate oxide hardness.

    SciTech Connect

    Dondero, Richard; Headley, Thomas Jeffrey; Young, Ralph Watson; Draper, Bruce Leroy; Shaneyfelt, Marty Ray

    2005-07-01

    Under conditions that were predicted as 'safe' by well-established TCAD packages, radiation hardness can still be significantly degraded by a few lucky arsenic ions reaching the gate oxide during self-aligned CMOS source/drain ion implantation. The most likely explanation is that both oxide traps and interface traps are created when ions penetrate and damage the gate oxide after channeling or traveling along polysilicon grain boundaries during the implantation process.

  20. LSI/VLSI Ion Implanted GaAs IC Processing

    DTIC Science & Technology

    1982-02-10

    insulating High Speed Logic Ion Implantation GaAs IC FET Integrated Circuits MESFET 20. ABSTRACT (Coalki. on.. roersie if oookay and IdoeI by WOOe tw**, This...The goal of this program is to realize the full potential of GaAs digital integrated circuits employing depletion mode MESFETs by developing the...Processing. The main objective of this program is to realize the full potential of GaAs digital integrated circuits by expanding and improving

  1. Ion implanted junctions for silicon space solar cells

    NASA Technical Reports Server (NTRS)

    Spitzer, M. B.; Sanfacon, M. M.; Wolfson, R. G.

    1983-01-01

    This paper reviews the application of ion implantation to emitter and back surface field formation in silicon space solar cells. Experiments based on 2 ohm-cm boron-doped silicon are presented. It is shown that the implantation process is particularly compatible with formation of a high-quality back surface reflector. Large area solar cells with AM0 efficiency greater than 14 percent are reported.

  2. Swept Line Electron Beam Annealing of Ion Implanted Semiconductors.

    DTIC Science & Technology

    1982-07-01

    a pre- liminary study using silicon solar cells. This work was undertaken in cooperation with Dr. J. Eguren of the Instituto De Energia Solar , Madrid...device fabrication has been attempted. To date, resistors, capacitors, diodes, bipolar transistors, MOSFEs, and solar cells have been fabricated with...34 " 48 *Si Solar Cells Ruby PL P+ Ion-Implanted 49 Ruby PL Pulsed Diffused 50 :C

  3. The Use of Ion Implantation for Materials Processing.

    DTIC Science & Technology

    1980-10-06

    IPreEEhhh I l...fflllffllff NRL Memorandum Report 4341 TheUseofIon Implantation for Materials Processing Semana Progres Report for the Period 1 Oct. 1979...beam current. The temperature was judged by observing of results to be expected from such a Gaussian distribution the color of the samples through a...light multiply tion." ion channeling,’ ’ Coates-Kikuchi lines,’ physical ap- reflected between the front surface and the interface between pearance ( color

  4. Ion implantation effects in 'cosmic' dust grains

    NASA Technical Reports Server (NTRS)

    Bibring, J. P.; Langevin, Y.; Maurette, M.; Meunier, R.; Jouffrey, B.; Jouret, C.

    1974-01-01

    Cosmic dust grains, whatever their origin may be, have probably suffered a complex sequence of events including exposure to high doses of low-energy nuclear particles and cycles of turbulent motions. High-voltage electron microscope observations of micron-sized grains either naturally exposed to space environmental parameters on the lunar surface or artificially subjected to space simulated conditions strongly suggest that such events could drastically modify the mineralogical composition of the grains and considerably ease their aggregation during collisions at low speeds. Furthermore, combined mass spectrometer and ionic analyzer studies show that small carbon compounds can be both synthesized during the implantation of a mixture of low-energy D, C, N ions in various solids and released in space by ion sputtering.

  5. Towards the bulk carbon content of Earth; new metal carbide geobarometer in high pressure diamond.

    NASA Astrophysics Data System (ADS)

    Jones, A. P.; Dobson, D.; Milledge, H. J.

    2009-04-01

    Formation of the metallic core in Earth (and other terrestrial planets) is not thought to have completely removed metallic iron from the lower mantle, where metallic iron might therefore be expected to occur as a widespread minor component [1]. We provide a new interpretation of metallic carbide inclusions in some diamond, which support a very high pressure origin from the lower mantle. Unlike rare carbides reported from diamonds previously without silicon [2], some diamonds from Jagersfontein coexist with iron-rich carbides which do contain significant silicon and oxygen, including in some cases their partial exsolution products. Based on an experimental calibration for liquid iron coexisting with lower mantle perovskite [3], we are able to show that some carbides were likely derived from pressures of approximately 45 GPa, or depths of >1100 km. This potential geobarometer has not been corrected for the behaviour of carbon in the liquid iron system, which might be an important experimental goal. The recognition of this independent carbide geobarometer offers an important new tool to confirm the superdeep origin of some diamond. The carbide-bearing diamonds are from a group whose charcteristics have recently been described [5]. Their distinctive light carbon isotopic signature (13^C ~ 17 ) coupled with evidence for very low contents nitrogen which is nonetheless highly aggregated, might be interpreted as indicative of subducted carbon. However, we are also open to the possibility that the bulk carbon isotopic composition of the Earth might also be different from the normal mantle value (13^C ~ 6 ), in which case the potential 0.4 wt% C in the Earth's core could also be isotopically very light, as suggested by Grady et al [6]. References [1] Frost D et al, Nature 428, 409-412 (2004) [2] Jacob D E et al, Contrib. Mineral. Petrol., 146, 566-576 (2004) [3] Lin et al, Science, 295, 313-315 (2002) [4] Dubrovinsky L. et al, Nature 422, 58-61 (2003) [5] Jones A P et al, 9

  6. Photosensitivity enhancement of PLZT ceramics by positive ion implantation

    DOEpatents

    Land, Cecil E.; Peercy, Paul S.

    1983-01-01

    The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface. Implanted ions include H.sup.+, He.sup.+, Ne.sup.+, Ar.sup.+, as well as chemically reactive ions from Fe, Cr, and Al. The positive ion implantation advantageously serves to shift the absorption characteristics of the PLZT material from near-UV light to visible light. As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources. The method disclosed includes exposing the PLZT plate to the positive ions at sufficient density, from 1.times.10.sup.12 to 1.times.10.sup.17, and with sufficient energy, from 100 to 500 KeV, to provide photosensitivity enhancement. The PLZT material may have a lanthanum content ranging from 5 to 10%, a lead zirconate content of 62 to 70 mole %, and a lead titanate content of 38 to 30%. The ions are implanted at a depth of 0.1 to 2 microns below the surface of the PLZT plate.

  7. Method For Silicon Surface Texturing Using Ion Implantation

    SciTech Connect

    Kadakia, Nirag; Naczas, Sebastian; Bakhru, Hassaram; Huang Mengbing

    2011-06-01

    As the semiconductor industry continues to show more interest in the photovoltaic market, cheaper and readily integrable methods of silicon solar cell production are desired. One of these methods - ion implantation - is well-developed and optimized in all commercial semiconductor fabrication facilities. Here we have developed a silicon surface texturing technique predicated upon the phenomenon of surface blistering of H-implanted silicon, using only ion implantation and thermal annealing. We find that following the H implant with a second, heavier implant markedly enhances the surface blistering, causing large trenches that act as a surface texturing of c-Si. We have found that this method reduces total broadband Si reflectance from 35% to below 5percent;. In addition, we have used Rutherford backscattering/channeling measurements investigate the effect of ion implantation on the crystallinity of the sample. The data suggests that implantation-induced lattice damage is recovered upon annealing, reproducing the original monocrystalline structure in the previously amorphized region, while at the same time retaining the textured surface.

  8. Extreme Precipitation Strengthening in Ion-Implanted Nickel

    SciTech Connect

    Follstaedt, D.M.; Knapp, J.A.; Myers, S.M.; Petersen, G.A.

    1999-05-03

    Precipitation strengthening of nickel was investigated using ion-implantation alloying and nanoindentation testing for particle separations in the nanometer range and volume fractions extending above 10O/O. Ion implantation of either oxygen alone or oxygen plus aluminum at room temperature was shown to produce substantial strengthening in the ion-treated layer, with yield strengths near 5 GPa in both cases. After annealing to 550"C the oxygen-alone layer loses much of the benefit, with its yield strength reduced to 1.2 GP~ but the dual ion-implanted layer retains a substantially enhanced yield strength of over 4 GPa. Examination by transmission electron f microscopy showed very fine dispersions of 1-5 nm diameter NiO and y-A1203 precipitates in the implanted layers before annealing. The heat treatment at 550"C induced ripening of the NiO particles to sizes ranging from 7 to 20 nm, whereas the more stable ~-A1203 precipitates were little changed. The extreme strengthening we observe is in semiquantitative agreement with predictions based on the application of dispersion-hardening theory to these microstructure.

  9. Nucleation of diamond by pure carbon ion bombardment--a transmission electron microscopy study

    SciTech Connect

    Yao, Y.; Liao, M.Y.; Wang, Z.G.; Lifshitz, Y.; Lee, S.

    2005-08-08

    A cross-sectional high-resolution transmission electron microscopy (HRTEM) study of a film deposited by a 1 keV mass-selected carbon ion beam onto silicon held at 800 deg. C is presented. Initially, a graphitic film with its basal planes perpendicular to the substrate is evolving. The precipitation of nanodiamond crystallites in upper layers is confirmed by HRTEM, selected area electron diffraction, and electron energy loss spectroscopy. The nucleation of diamond on graphitic edges as predicted by Lambrecht et al. [W. R. L. Lambrecht, C. H. Lee, B. Segall, J. C. Angus, Z. Li, and M. Sunkara, Nature, 364 607 (1993)] is experimentally confirmed. The results are discussed in terms of our recent subplantation-based diamond nucleation model.

  10. Isotopic fractionation of oxygen and carbon in decomposed lower-mantle inclusions in diamond

    NASA Astrophysics Data System (ADS)

    Kaminsky, Felix; Matzel, Jennifer; Jacobsen, Ben; Hutcheon, Ian; Wirth, Richard

    2016-04-01

    Two carbonatitic mineral assemblages, calcite + wollastonite and calcite + monticellite, which are encapsulated in two diamond grains from the Rio Soriso basin in the Juina area, Mato Grosso State, Brazil, were studied utilizing the NanoSIMS technique. The assemblages were formed as the result of the decomposition of the lower-mantle assemblage calcite + CaSi-perovskite + volatile during the course of the diamond ascent under pressure conditions from 15 to less than 0.8 GPa. The oxygen and carbon isotopic compositions of the studied minerals are inhomogeneous. They fractionated during the process of the decomposition of primary minerals to very varying values: δ18O from -3.3 to +15.4 ‰ SMOW and δ13C from -2.8 to +9.3 ‰ VPDB. These values significantly extend the mantle values for these elements in both isotopically-light and isotopically-heavy areas.

  11. Nucleation of diamond by pure carbon ion bombardment—a transmission electron microscopy study

    NASA Astrophysics Data System (ADS)

    Yao, Y.; Liao, M. Y.; Wang, Z. G.; Lifshitz, Y.; Lee, S. T.

    2005-08-01

    A cross-sectional high-resolution transmission electron microscopy (HRTEM) study of a film deposited by a 1 keV mass-selected carbon ion beam onto silicon held at 800 °C is presented. Initially, a graphitic film with its basal planes perpendicular to the substrate is evolving. The precipitation of nanodiamond crystallites in upper layers is confirmed by HRTEM, selected area electron diffraction, and electron energy loss spectroscopy. The nucleation of diamond on graphitic edges as predicted by Lambrecht et al. [W. R. L. Lambrecht, C. H. Lee, B. Segall, J. C. Angus, Z. Li, and M. Sunkara, Nature, 364 607 (1993)] is experimentally confirmed. The results are discussed in terms of our recent subplantation-based diamond nucleation model.

  12. Dynamics of the shock-induced transition from graphite to warm dense diamond and liquid carbon

    NASA Astrophysics Data System (ADS)

    Kraus, D.; Barbrel, B.; Frydrych, S.; Helfrich, J.; Schaumann, G.; Vorberger, J.; Gericke, D. O.; Fletcher, L. B.; Gauthier, M.; Goede, S.; Granados, E.; Lee, H. J.; Nagler, B.; Gamboa, E.; Ravasio, A.; Schumaker, W.; Doeppner, T.; Bachmann, B.; Neumayer, P.; Gregori, G.; Roth, M.; Glenzer, S. H.; Falcone, R. W.

    2015-03-01

    We present novel experimental observations of the ion structure in warm dense carbon at pressures from 20 to 220 GPa and temperatures of several thousand Kelvins. Our experiments employ x-ray sources at kilo-joule class laser facilities and at the Linac Coherent Light Source to perform spectrally and angularly resolved x-ray scattering from shock-compressed graphite samples. Using different types of graphite and varying drive laser intensity, we were able to probe conditions below and above the melting line, resolving the shock-induced graphite-to-diamond and graphite-to-liquid transitions on nanosecond time scale. Moreover, we have observed the dynamic formation of hexagonal diamond by shock-compression of highly oriented graphite samples. This work was supported SSAA program Contract No. DEFG52- 06NA26212.

  13. Characterization of diamond-like carbon films by SEM, XRD and Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Pang, Hua; Wang, Xingquan; Zhang, Guling; Chen, Huan; Lv, Guohua; Yang, Size

    2010-08-01

    Diamond-like carbon films were deposited by electrolysis of a water-ethanol solution on Cu at low voltages (60-100 V) at 2 mm interelectrode separation. The films were characterized by scanning electron microscopy (SEM), X-ray diffractometer (XRD) and Raman spectroscopy. The films were found to be continuous and compact with uniform grain distribution. Raman spectroscopy analysis revealed two broad bands at ˜1350 and ˜1580 cm -1. The downshift of the G band of graphite is indicative of the presence of DLC. For XRD analysis, the three strong peaks located at 2 θ values of 43.2°, 74.06° and 89.9° can be identified with reflections form (1 1 1), (2 2 0) and (3 1 1) plane of diamond.

  14. The semi-empirical tight-binding model for carbon allotropes “between diamond and graphite”

    SciTech Connect

    Lytovchenko, V.; Kurchak, A.; Strikha, M.

    2014-06-28

    The new carbon allotropes “between diamond and graphite” have come under intensive examination during the last decade due to their numerous technical applications. The modification of energy gap in thin films of these allotropes was studied experimentally using optical methods. The proposed simple model of carbon clusters with variable lengths of chemical bonds allows us to imitate the transfer from diamond and diamond-like to graphite-like structures, as well as the corresponding modification of hybridization sp{sup 3}/sp{sup 2} for diamond-like and sp{sub z} for graphite-like phases. This enables us to estimate various allotropes parameters, like the gap E{sub g}, energies of valence E{sub v}, and conduction E{sub c} band edges, and the value of electronic affinity, i.e., optical work function X, which are all of practical importance. The obtained estimations correspond to the experimental data.

  15. Temperature Dependence of Electroresistivity, Negative and Positive Magnetoresistivity of Graphite/Diamond Nanocomposites and Onion-Like Carbon

    DTIC Science & Technology

    2001-11-01

    of graphite/diamond nanocomposites (GDNC) and onion-like carbon (OLC) prepared by vacuum annealing of nanodiamond (ND) at various fixed temperatures...Diamond is insulator, while graphite can be considered as a semi- metal . At the same time electronic transport and magnetic properties of graphitic...temperature p(T) at 4-300 K were performed. For details see in [10]. The samples were placed in glass tubes with a diameter d=2 mm and length /=20

  16. Osteopontin (OPN) is an important protein to mediate improvements in the biocompatibility of C ion-implanted silicone rubber.

    PubMed

    Wang, Shao-liang; Shi, Xiao-hua; Yang, Zhi; Zhang, Yi-ming; Shen, Li-ru; Lei, Ze-yuan; Zhang, Zhi-Qing; Cao, Cong; Fan, Dong-li

    2014-01-01

    Medical device implants are drawing increasing amounts of interest from modern medical practitioners. However, this attention is not evenly spread across all such devices; most of these implantable devices can cause adverse reactions such as inflammation, fibrosis, thrombosis, and infection. In this work, the biocompatibility of silicone rubber (SR) was improved through carbon (C) ion implantation. Scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and X-ray diffraction (XRD) results confirmed that these newly generated carbon-implanted silicone rubbers (C-SRs) had large, irregular peaks and deep valleys on their surfaces. The water contact angle of the SR surface decreased significantly after C ion implantation. C ion implantation also changed the surface charge distribution, silicone oxygen rate, and chemical-element distribution of SR to favor cell attachment. The dermal fibroblasts cultured on the surface C-SR grew faster and showed more typical fibroblastic shapes. The expression levels of major adhesion proteins, including talin-1, zyxin, and vinculin, were significantly higher in dermal fibroblasts cultured on C-SR coated plates than in dermal fibroblasts cultured on SR. Those same dermal fibroblasts on C-SRs showed more pronounced adhesion and migration abilities. Osteopontin (OPN), a critical extracellular matrix (ECM) protein, was up-regulated and secreted from dermal fibroblasts cultured on C-SR. Matrix metalloproteinase-9 (MMP-9) activity was also increased. These cells were highly mobile and were able to adhere to surfaces, but these abilities were inhibited by the monoclonal antibody against OPN, or by shRNA-mediated MMP-9 knockdown. Together, these results suggest that C ion implantation significantly improves SR biocompatibility, and that OPN is important to promote cell adhesion to the C-SR surface.

  17. Osteopontin (OPN) Is an Important Protein to Mediate Improvements in the Biocompatibility of C Ion-Implanted Silicone Rubber

    PubMed Central

    Zhang, Yi-ming; Shen, Li-ru; Lei, Ze-yuan; Zhang, Zhi-qing; Cao, Cong; Fan, Dong-li

    2014-01-01

    Medical device implants are drawing increasing amounts of interest from modern medical practitioners. However, this attention is not evenly spread across all such devices; most of these implantable devices can cause adverse reactions such as inflammation, fibrosis, thrombosis, and infection. In this work, the biocompatibility of silicone rubber (SR) was improved through carbon (C) ion implantation. Scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and X-ray diffraction (XRD) results confirmed that these newly generated carbon-implanted silicone rubbers (C-SRs) had large, irregular peaks and deep valleys on their surfaces. The water contact angle of the SR surface decreased significantly after C ion implantation. C ion implantation also changed the surface charge distribution, silicone oxygen rate, and chemical-element distribution of SR to favor cell attachment. The dermal fibroblasts cultured on the surface C-SR grew faster and showed more typical fibroblastic shapes. The expression levels of major adhesion proteins, including talin-1, zyxin, and vinculin, were significantly higher in dermal fibroblasts cultured on C-SR coated plates than in dermal fibroblasts cultured on SR. Those same dermal fibroblasts on C-SRs showed more pronounced adhesion and migration abilities. Osteopontin (OPN), a critical extracellular matrix (ECM) protein, was up-regulated and secreted from dermal fibroblasts cultured on C-SR. Matrix metalloproteinase-9 (MMP-9) activity was also increased. These cells were highly mobile and were able to adhere to surfaces, but these abilities were inhibited by the monoclonal antibody against OPN, or by shRNA-mediated MMP-9 knockdown. Together, these results suggest that C ion implantation significantly improves SR biocompatibility, and that OPN is important to promote cell adhesion to the C-SR surface. PMID:24911051

  18. Processing of silicon solar cells by ion implantation and laser annealing

    NASA Technical Reports Server (NTRS)

    Minnucci, J. A.; Matthei, K. W.; Greenwald, A. C.

    1981-01-01

    Methods to improve the radiation tolerance of silicon cells for spacecraft use are described. The major emphasis of the program was to reduce the process-induced carbon and oxygen impurities in the junction and base regions of the solar cell, and to measure the effect of reduced impurity levels on the radiation tolerance of cells. Substrates of 0.1, 1.0 and 10.0 ohm-cm float-zone material were used as starting material in the process sequence. High-dose, low-energy ion implantation was used to form the junction in n+p structures. Implant annealing was performed by conventional furnace techniques and by pulsed laser and pulsed electron beam annealing. Cells were tested for radiation tolerance at Spire and NASA-LeRC. After irradiation by 1 MeV electrons to a fluence of 10 to the 16th power per sq cm, the cells tested at Spire showed no significant process induced variations in radiation tolerance. However, for cells tested at Lewis to a fluence of 10 to the 15th power per sq cm, ion-implanted cells annealed in vacuum by pulsed electron beam consistently showed the best radiation tolerance for all cell resistivities.

  19. Zinc-ion implanted and deposited titanium surfaces reduce adhesion of Streptococccus mutans

    NASA Astrophysics Data System (ADS)

    Xu, Juan; Ding, Gang; Li, Jinlu; Yang, Shenhui; Fang, Bisong; Sun, Hongchen; Zhou, Yanmin

    2010-10-01

    While titanium (Ti) is a commonly used dental implant material with advantageous biocompatible and mechanical properties, native Ti surfaces do not have the ability to prevent bacterial colonization. The objective of this study was to evaluate the chemical composition and bacterial adhesive properties of zinc (Zn) ion implanted and deposited Ti surfaces (Zn-PIIID-Ti) as potential dental implant materials. Surfaces of pure Ti (cp-Ti) were modified with increasing concentrations of Zn using plasma immersion ion implantation and deposition (PIIID), and elemental surface compositions were characterized by X-ray photoelectron spectrometry (XPS). To evaluate bacterial responses, Streptococcus mutans were seeded onto the modifiedTi surfaces for 48 h and subsequently observed by scanning electron microscopy. Relative numbers of bacteria on each surface were assessed by collecting the adhered bacteria, reculturing and counting colony forming units after 48 h on bacterial grade plates. Ti, oxygen and carbon elements were detected on all surfaces by XPS. Increased Zn signals were detected on Zn-PIIID-Ti surfaces, correlating with an increase of Zn-deposition time. Substantial numbers of S. mutans adhered to cp-Ti samples, whereas bacterial adhesion on Zn-PIIID-Ti surfaces signficantly decreased as the Zn concentration increased ( p < 0.01). In conclusion, PIIID can successfully introduce Zn onto a Ti surface, forming a modified surface layer bearing Zn ions that consequently deter adhesion of S. mutans, a common bacterium in the oral environment.

  20. 4-Diamond Formation from Amorphouse Carbon and Graphite in the Presence of COH Fluids : An InSitu High-Pressure and -Temperature Laser-Heated Diamond Anvil Cell Experimental Study

    SciTech Connect

    Zhang, J.; Prakapenka, V.; Kubo, A.; Kavner, A.; Green, H.W.; Dobrzhinetskaya, L.

    2011-10-14

    Microdiamonds from orogenic belts contain nanometer-size fluid inclusions suggesting diamond formation from supercritical carbon - oxygen - hydrogen (COH) fluids. Here we report experimental results of diamond nucleation from amorphous carbon and polycrystalline graphite in the presence of COH fluids in a laser-heated diamond anvil cell. Our results show that: (i) diamonds can nucleate from graphite or amorphous carbon at pressures of 9-11 GPa and temperatures of 1200-1400 K in the presence of COH fluids; (ii) it is easier to nucleate diamond from amorphous carbon than from graphite with or without the COH fluids; and (iii) the fluid from decomposition of glucose is more efficient in promoting the graphite-to-diamond transformation than the fluid from decomposition of oxalic acid dihydrate. Carbon crystallinity has strong effects on the kinetics of diamond nucleation and growth. The experimental results demonstrated the critical role of presence and composition of supercritical COH fluids for promoting the graphite-to-diamond transformation.

  1. Origin of sub-lithospheric diamonds from the Juina-5 kimberlite (Brazil): constraints from carbon isotopes and inclusion compositions

    NASA Astrophysics Data System (ADS)

    Thomson, A. R.; Kohn, S. C.; Bulanova, G. P.; Smith, C. B.; Araujo, D.; Walter, M. J.

    2014-12-01

    Forty-one diamonds sourced from the Juina-5 kimberlite pipe in Southern Brazil, which contain optically identifiable inclusions, have been studied using an integrated approach. The diamonds contain <20 ppm nitrogen (N) that is fully aggregated as B centres. Internal structures in several diamonds revealed using cathodoluminescence (CL) are unlike those normally observed in lithospheric samples. The majority of the diamonds are composed of isotopically light carbon, and the collection has a unimodal distribution heavily skewed towards δ13C ~ -25 ‰. Individual diamonds can display large carbon isotope heterogeneity of up to ~15 ‰ and predominantly have isotopically lighter cores displaying blue CL, and heavier rims with green CL. The light carbon isotopic compositions are interpreted as evidence of diamond growth from abiotic organic carbon added to the oceanic crust during hydrothermal alteration. The bulk isotopic composition of the oceanic crust, carbonates plus organics, is equal to the composition of mantle carbon (-5 ‰), and we suggest that recycling/mixing of subducted material will replenish this reservoir over geological time. Several exposed, syngenetic inclusions have bulk compositions consistent with former eclogitic magnesium silicate perovskite, calcium silicate perovskite and NAL or CF phases that have re-equilibrated during their exhumation to the surface. There are multiple occurrences of majoritic garnet with pyroxene exsolution, coesite with and without kyanite exsolution, clinopyroxene, Fe or Fe-carbide and sulphide minerals alongside single occurrences of olivine and ferropericlase. As a group, the inclusions have eclogitic affinity and provide evidence for diamond formation at pressures extending to Earth's deep transition zone and possibly the lower mantle. It is observed that the major element composition of inclusions and isotopic compositions of host Juina-5 diamonds are not correlated. The diamond and inclusion compositions are

  2. Multi-Zone Modeling of Ion-Implanted Impurity Redistribution.

    NASA Astrophysics Data System (ADS)

    Araujo, Carlos Alberto Paz De.

    Implanted impurity redistribution has been observed during the annealing step of many ion-implanted materials. Throughout the ion-implantation literature, experimental evidence suggests some position dependence in the redistribution process. Specifically, the tail region of ion-implanted impurity profiles usually exhibit fast diffusion during annealing whereas the near-surface region shows slow diffusion. To date, redistribution models have failed to include this spacial dependence in the diffusion coefficient of ion -implanted impurities. Analytical expressions for the post -annealing profile are usually found from oversimplified redistribution models that employ Fick's second law with a reflecting surface boundary condition and a homogeneous semi-infinite medium. This modeling scheme is not capable to accommodate regions of high or low redistribution because of the restriction of a single diffusion constant. In general the ideal gaussian LSS profile is assumed as the initial condition rendering an analytic solution to the simple diffusion model that is capable of modeling only gaussian broadening. The approach taken in the present work is to model the ion-implanted substrate as a stratified medium with zones where a local diffusion equation is obeyed. An effective diffusion coefficient is defined within each zone with the intent to lump local disturbances such as defects and precipitates. Thus, regions of low or high redistribution are modeled by zones of large or small effective diffusion coefficients. Because it is not always possible to have an analytical expression for the pre-annealing profile the multi-zone modeling scheme developed in this work accepts any type of initial condition. In order to accomplish this level of generality the Crank-Nicolson numerical formula is used to solve the multi-zone equations. Also, the Crout-Doolittle matrix reduction algorithm is utilized to reduce the computation time. The multi-zone modeling scheme is tested for the case

  3. Carbon ion beam focusing using laser irradiated heated diamond hemispherical shells

    SciTech Connect

    Offermann, Dustin T; Flippo, Kirk A; Gaillard, Sandrine A

    2009-01-01

    Experiments preformed at the Los Alamos National Laboratory's Trident Laser Facility were conducted to observe the acceleration and focusing of carbon ions via the TNSA mechanism using hemispherical diamond targets. Trident is a 200TW class laser system with 80J of 1 {micro}m, short-pulse light delivered in 0.5ps, with a peak intensity of 5 x 10{sup 20} W/cm{sup 2}. Targets where Chemical Vapor Deposition (CVD) diamonds formed into hemispheres with a radius of curvature of 400{micro}m and a thickness of 5{micro}m. The accelerated ions from the hemisphere were diagnosed by imaging the shadow of a witness copper mesh grid located 2mm behind the target onto a film pack located 5cm behind the target. Ray tracing was used to determine the location of the ion focal spot. The TNSA mechanism favorably accelerates hydrogen found in and on the targets. To make the carbon beam detectable, targets were first heated to several hundred degrees Celsius using a CW, 532nm, 8W laser. Imaging of the carbon beam was accomplished via an auto-radiograph of a nuclear activated lithium fluoride window in the first layer of the film pack. The focus of the carbon ion beam was determined to be located 630 {+-} 110 {micro}m from the vertex of the hemisphere.

  4. Metalorganic Chemical Vapor Deposition of Ruthenium-Doped Diamond like Carbon Films

    NASA Technical Reports Server (NTRS)

    Sunkara, M. K.; Ueno, M.; Lian, G.; Dickey, E. C.

    2001-01-01

    We investigated metalorganic precursor deposition using a Microwave Electron Cyclotron Resonance (ECR) plasma for depositing metal-doped diamondlike carbon films. Specifically, the deposition of ruthenium doped diamondlike carbon films was investigated using the decomposition of a novel ruthenium precursor, Bis(ethylcyclopentadienyl)-ruthenium (Ru(C5H4C2H5)2). The ruthenium precursor was introduced close to the substrate stage. The substrate was independently biased using an applied RF power. Films were characterized using Fourier Transform Infrared Spectroscopy (FTIR), Transmission Electron Microscopy (TEM) and Four Point Probe. The conductivity of the films deposited using ruthenium precursor showed strong dependency on the deposition parameters such as pressure. Ruthenium doped sample showed the presence of diamond crystallites with an average size of approx. 3 nm while un-doped diamondlike carbon sample showed the presence of diamond crystallites with an average size of 11 nm. TEM results showed that ruthenium was atomically dispersed within the amorphous carbon network in the films.

  5. Infrared spectral and carbon isotopic characteristics of micro- and macro-diamonds from the Panda kimberlite (Central Slave Craton, Canada)

    NASA Astrophysics Data System (ADS)

    Melton, G. L.; Stachel, T.; Stern, R. A.; Carlson, J.; Harris, J. W.

    2013-09-01

    One hundred and twenty-one micro-diamonds (< 1 mm) and 90 macro-diamonds (2.5 mm to 3.4 mm) from the Panda kimberlite (Ekati mine, Central Slave Craton, Canada) were analyzed for nitrogen content, nitrogen aggregation state (%B) and platelet and hydrogen peak areas (cm- 2). Micro-diamond nitrogen concentrations range from < 10 at. ppm to 1696 at. ppm (median = 805 at. ppm) and the median aggregation state is 23%B. Macro-diamonds range from < 10 at. ppm to 1260 at. ppm (median = 187 at. ppm) nitrogen and have a median nitrogen aggregation of 26%B. Platelet and hydrogen peaks were observed in 37% and 79% of the micro-diamonds and 79% and 56% of the macro-diamonds, respectively. Nitrogen based time averaged residence temperatures indicate that micro- and macro-diamonds experienced similar thermal mantle residence histories, both populations displaying bimodal residence temperature distributions with a gap between 1130 °C and 1160 °C (at 3.5 Ga residence). In addition, SIMS carbon isotopic analyses for the micro-diamonds were obtained: δ13C compositions range from - 6.9‰ to + 1.8‰ (median = - 4.3‰). CL imaging reveals distinct growth layers that in some samples differ by > 2‰, but mostly vary by < 0.5‰. Comparison of only the “gem-quality” samples (n = 49 micro- and 90 macro-diamonds) between the two diamond sets, indicates a statistically significant shift of + 1.3‰ in average δ13C from macro- to micro-diamonds and this shift documents distinct diamond forming fluids, fractionation process or growth histories. A broad transition to heavier isotopic values is also observed in connection to decreasing mantle residence temperatures. The bimodal mantle residence temperature distribution may coincide with the transition from highly depleted shallow to more fertile deep lithospheric mantle observed beneath the Central Slave Craton. The increase in δ13C with decreasing residence temperature (proxy for decreasing depth) is interpreted to reflect diamond

  6. Highly Stripped Ion Sources for MeV Ion Implantation

    SciTech Connect

    Hershcovitch, Ady

    2009-06-30

    Original technical objectives of CRADA number PVI C-03-09 between BNL and Poole Ventura, Inc. (PVI) were to develop an intense, high charge state, ion source for MeV ion implanters. Present day high-energy ion implanters utilize low charge state (usually single charge) ion sources in combination with rf accelerators. Usually, a MV LINAC is used for acceleration of a few rnA. It is desirable to have instead an intense, high charge state ion source on a relatively low energy platform (de acceleration) to generate high-energy ion beams for implantation. This de acceleration of ions will be far more efficient (in energy utilization). The resultant implanter will be smaller in size. It will generate higher quality ion beams (with lower emittance) for fabrication of superior semiconductor products. In addition to energy and cost savings, the implanter will operate at a lower level of health risks associated with ion implantation. An additional aim of the project was to producing a product that can lead to long­ term job creation in Russia and/or in the US. R&D was conducted in two Russian Centers (one in Tomsk and Seversk, the other in Moscow) under the guidance ofPVI personnel and the BNL PI. Multiple approaches were pursued, developed, and tested at various locations with the best candidate for commercialization delivered and tested at on an implanter at the PVI client Axcelis. Technical developments were exciting: record output currents of high charge state phosphorus and antimony were achieved; a Calutron-Bemas ion source with a 70% output of boron ion current (compared to 25% in present state-of-the-art). Record steady state output currents of higher charge state phosphorous and antimony and P ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb {sup 4 +}, Sb{sup 5+}, and Sb{sup 6+} respectively. Ultimate commercialization goals did not succeed (even though a number of the products like high

  7. Lower pressure synthesis of diamond material

    DOEpatents

    Lueking, Angela; Gutierrez, Humberto; Narayanan, Deepa; Burgess Clifford, Caroline E.; Jain, Puja

    2010-07-13

    Methods of synthesizing a diamond material, particularly nanocrystalline diamond, diamond-like carbon and bucky diamond are provided. In particular embodiments, a composition including a carbon source, such as coal, is subjected to addition of energy, such as high energy reactive milling, producing a milling product enriched in hydrogenated tetrahedral amorphous diamond-like carbon compared to the coal. A milling product is treated with heat, acid and/or base to produce nanocrystalline diamond and/or crystalline diamond-like carbon. Energy is added to produced crystalline diamond-like carbon in particular embodiments to produce bucky diamonds.

  8. Mineral inclusions in sublithospheric diamonds from Collier 4 kimberlite pipe, Juina, Brazil: subducted protoliths, carbonated melts and primary kimberlite magmatism

    NASA Astrophysics Data System (ADS)

    Bulanova, Galina P.; Walter, Michael J.; Smith, Chris B.; Kohn, Simon C.; Armstrong, Lora S.; Blundy, Jon; Gobbo, Luiz

    2010-10-01

    We report on a suite of diamonds from the Cretaceous Collier 4 kimberlite pipe, Juina, Brazil, that are predominantly nitrogen-free type II crystals showing complex internal growth structures. Syngenetic mineral inclusions comprise calcium- and titanium-rich phases with perovskite stoichiometry, Ca-rich majoritic-garnet, clinopyroxene, olivine, TAPP phase, minerals with stoichiometries of CAS and K-hollandite phases, SiO2, FeO, native iron, low-Ni sulfides, and Ca-Mg-carbonate. We divide the diamonds into three groups on the basis of the carbon isotope compositions (δ13C) of diamond core zones. Group 1 diamonds have heavy, mantle-like δ13C (-5 to -10‰) with mineral inclusions indicating a transition zone origin from mafic protoliths. Group 2 diamonds have intermediate δ13C (-12 to -15‰), with inclusion compositions indicating crystallization from near-primary and differentiated carbonated melts derived from oceanic crust in the deep upper mantle or transition zone. A 206Pb/238U age of 101 ± 7 Ma on a CaTiSi-perovskite inclusion (Group 2) is close to the kimberlite emplacement time (93.1 ± 1.5 Ma). Group 3 diamonds have extremely light δ13C (-25‰), and host inclusions have compositions akin to high-pressure-temperature phases expected to be stable in pelagic sediments subducted to transition zone depths. Collectively, the Collier 4 diamonds and their inclusions indicate multi-stage, polybaric growth histories in dynamically changing chemical environments. The young inclusion age, the ubiquitous chemical and isotopic characteristics indicative of subducted materials, and the regional tectonic history, suggest a model in which generation of sublithospheric diamonds and their inclusions, and the proto-kimberlite magmas, are related genetically, temporally and geographically to the interaction of subducted lithosphere and a Cretaceous plume.

  9. Biological responses of diamond-like carbon (DLC) films with different structures in biomedical application.

    PubMed

    Liao, T T; Zhang, T F; Li, S S; Deng, Q Y; Wu, B J; Zhang, Y Z; Zhou, Y J; Guo, Y B; Leng, Y X; Huang, N

    2016-12-01

    Diamond-like carbon (DLC) films are potential candidates for artificial joint surface modification in biomedical applications, and the influence of the structural features of DLC surfaces on cell functions has attracted attention in recent decades. Here, the biocompatibility of DLC films with different structures was investigated using macrophages, osteoblasts and fibroblasts. The results showed that DLC films with a low ratio of sp(2)/sp(3), which tend to have a structure similar to that of diamond, led to less inflammatory, excellent osteogenic and fibroblastic reactions, with higher cell viability, better morphology, lower release of TNF-α (tumor necrosis factor-α) and IL-6 (interleukin-6), and higher release of IL-10 (interleukin-10). The results also demonstrated that the high-density diamond structure (low ratio of sp(2)/sp(3)) of DLC films is beneficial for cell adhesion and growth because of better protein adsorption without electrostatic repulsion. These findings provide valuable insights into the mechanisms underlying inhibition of an inflammatory response and the promotion of osteoblastogenesis and fibrous propagation, and effectively build a system for evaluating the biocompatibility of DLC films. Copyright © 2016 Elsevier B.V. All rights reserved.

  10. Quenching of liquid carbon under intensive heat transfer to the cold diamond substrate: Molecular-dynamic simulation

    NASA Astrophysics Data System (ADS)

    Dozhdikov, V. S.; Basharin, A. Yu; Levashov, P. R.

    2015-11-01

    Quenching of liquid carbon (T = 6600 K) on a cold diamond substrate at T = 300 K in conditions close to the experimental laser melting of dispersed graphite on the substrate of natural diamond is investigated using molecular dynamics (MD) simulations. Quenching was carried out for two types of boundary conditions on the side opposite to the diamond substrate. The simulations confirmed the experimental result of the formation of amorphous carbon under such conditions. The calculations showed that the destruction of the diamond substrate did not take place because of its very high thermal conductivity. The estimation of the cooling rate of liquid carbon was done, the result is 1015 K/s. Temperature profiles in different layers of liquid carbon were restored to reproduce the detailed picture of the quenching process. We evaluated the radial distribution functions (RDF), the distribution of carbon atom bond fractions sp1-sp2-sp3, the average bond length and the azimuthal angles distributions for amorphous carbon atoms. This analysis confirmed that the amorphous carbon obtained by quenching in MD-simulations had a graphite-like structure.

  11. Chromium-doped diamond-like carbon films deposited by dual-pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Písařík, P.; Jelínek, M.; Kocourek, T.; Zezulová, M.; Remsa, J.; Jurek, K.

    2014-10-01

    Diamond-like carbon (DLC) and Cr-doped diamond-like carbon layers were studied. DLC and Cr-DLC were deposited on silicon and titanium substrates (Ti-6Al-4V) by dual-pulsed laser ablation using two KrF excimer lasers and two targets (graphite and chromium). The composition was analyzed using wavelength-dependent X-ray spectroscopy. The Cr content increased from 2.2 to 17.9 at%. The topology and surface properties as roughness of layers were studied using scanning electron microscopy and atomic force microscopy. With the chromium concentration increased the roughness and the number of droplets. Carbon and chromium bonds were determined by Raman spectroscopy. With an increase in chromium content the I D/ I G ratio increased. Mechanical properties of DLC films with various chromium content were evaluated. Hardness (reduced Young's modulus) was determined by nanoindentation and reached of 51 GPa (309 GPa). Films adhesion was studied using scratch test and with concentration of chromium increased up to 20 N.

  12. Transmission photocathodes based on stainless steel mesh coated with deuterated diamond like carbon films

    NASA Astrophysics Data System (ADS)

    Huran, J.; Balalykin, N. I.; Feshchenko, A. A.; Kobzev, A. P.; Kleinová, A.; Sasinková, V.; Hrubčín, L.

    2014-07-01

    In this study we report on the dependence of electron emission properties on the transmission photocathodes DC gun based on stainless steel mesh coated with diamond like carbon films prepared at various technological conditions. Diamond like carbon films were deposited on the stainless steel mesh and silicon substrate by plasma enhanced chemical vapor deposition from gas mixtures CH4+D2+Ar, CH4+H2+Ar and reactive magnetron sputtering using a carbon target and gas mixtures Ar+D2, Ar+H2. The concentration of elements in films was determined by Rutherford backscattering spectrometry (RBS) and elastic recoil detection (ERD) analytical methods simultaneously. Chemical compositions were analyzed by Fourier transform infrared spectroscopy (FT-IR). Raman spectroscopy at visible excitation wavelength was used for the intensity ratio determination of Gaussian fit D-peak and G-peak of Raman spectra. The quantum efficiency was calculated from the measured laser energy and the measured cathode charge. The quantum efficiency of a prepared transmission photocathode was increased with increasing intensity ratio of D-peak and G-peak, which was increased by adding deuterium to the gas mixture and using technology reactive magnetron sputtering.

  13. Solar-induced chemical vapor deposition of diamond-type carbon films

    DOEpatents

    Pitts, J. Roland; Tracy, C. Edwin; King, David E.; Stanley, James T.

    1994-01-01

    An improved chemical vapor deposition method for depositing transparent continuous coatings of sp.sup.3 -bonded diamond-type carbon films, comprising: a) providing a volatile hydrocarbon gas/H.sub.2 reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and b) directing a concentrated solar flux of from about 40 to about 60 watts/cm.sup.2 through said reactant mixture to produce substrate temperatures of about 750.degree. C. to about 950.degree. C. to activate deposition of the film on said substrate.

  14. Solar-induced chemical vapor deposition of diamond-type carbon films

    DOEpatents

    Pitts, J.R.; Tracy, C.E.; King, D.E.; Stanley, J.T.

    1994-09-13

    An improved chemical vapor deposition method for depositing transparent continuous coatings of sp[sup 3]-bonded diamond-type carbon films, comprises: (a) providing a volatile hydrocarbon gas/H[sub 2] reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and (b) directing a concentrated solar flux of from about 40 to about 60 watts/cm[sup 2] through said reactant mixture to produce substrate temperatures of about 750 C to about 950 C to activate deposition of the film on said substrate. 11 figs.

  15. Pulse widths dependence of programming and erasing behaviors for diamond like carbon based resistive switching memories

    NASA Astrophysics Data System (ADS)

    Xu, Jianlong; Xie, Dan; Zhang, Chenhui; Zhang, Xiaowen; Peng, Pinggang; Fu, Di; Qian, He; Ren, Tian-ling; Liu, Litian

    2014-10-01

    We report the influences of pulse widths on the programming and erasing characteristics of diamond-like carbon films based resistive random access memory. The device can be only programmed with pulses wider than 50 ns for SET operations when the pulse voltage is 1.2 V and erased with pulses narrower than 25 ns for RESET operations when the pulse voltage is 0.4 V. The formation, rupture, and re-growth of the conductive sp2-like graphitic filaments are proposed to be responsible for the resistive switching behaviors, based on which the pulse widths dependences on its programming and erasing properties can be further explained.

  16. Advances in multi-spectral Diamond-Like Carbon (DLC) coatings

    NASA Astrophysics Data System (ADS)

    Keck, Jason; Karp, Christopher

    2014-05-01

    We discuss the development and applications of a new approach to Diamond-Like Carbon (DLC) coating that provides the durability of traditional DLC coatings, with the addition of significantly more transmission at visible wavelengths and greater transmission in the IR. We developed a deposition system design that incorporates multiple coating technologies, allowing for multiple material design approaches. This has enabled the manufacture of DLC coatings with improved extended spectral properties, suitable for applications in which the coating must withstand airborne particulate impacts, corrosive fluids, environmental extremes, and abrasive physical handling, while offering better than typical transmission in the visible or infrared wavelength regions, or both.

  17. Cleaning of diamond nanoindentation probes with oxygen plasma and carbon dioxide snow

    SciTech Connect

    Morris, Dylan J.

    2009-12-15

    Diamond nanoindentation probes may perform thousands of indentations over years of service life. There is a broad agreement that the probes need frequent cleaning, but techniques for doing so are mostly anecdotes shared between experimentalists. In preparation for the measurement of the shape of a nanoindentation probe by a scanning probe microscope, cleaning by carbon dioxide snow jets and oxygen plasma was investigated. Repeated indentation on a thumbprint-contaminated surface formed a compound that was very resistant to removal by solvents, CO{sub 2} snow, and plasma. CO{sub 2} snow cleaning is found to be a generally effective cleaning procedure.

  18. Effects of FeNi-phosphorus-carbon system on crystal growth of diamond under high pressure and high temperature conditions

    NASA Astrophysics Data System (ADS)

    Hu, Mei-Hua; Bi, Ning; Li, Shang-Sheng; Su, Tai-Chao; Zhou, Ai-Guo; Hu, Qiang; Jia, Xiao-Peng; Ma, Hong-An

    2015-03-01

    This paper reports the crystal growth of diamond from the FeNi-Carbon system with additive phosphorus at high pressures and high temperatures of 5.4-5.8 GPa and 1280-1360 °C. Attributed to the presence of additive phosphorus, the pressure and temperature condition, morphology, and color of diamond crystals change obviously. The pressure and temperature condition of diamond growth increases evidently with the increase of additive phosphorus content and results in the moving up of the V-shape region. The surfaces of the diamonds also become coarse as the additive phosphorus added in the growth system. Raman spectra indicate that diamonds grown from the FeNi-phosphorus-carbon system have more crystal defects and impurities. This work provides a new way to enrich the doping of diamond and improve the experimental exploration for future material applications. Project supported by the Doctoral Fund of Henan Polytechnic University, China (Grant Nos. B2013-013 and B2013-044) and the Research Projects of Science and Technology of the Education Department of Henan Province, China (Grant Nos. 14B430026 and 12A430010).

  19. Industrial hygiene and control technology assessment of ion implantation operations.

    PubMed

    Ungers, L J; Jones, J H

    1986-10-01

    Ion implantation is a process used to create the functional units (pn junctions) of integrated circuits, photovoltaic (solar) cells and other semiconductor devices. During the process, ions of an impurity or a "dopant" material are created, accelerated and imbedded in wafers of silicon. Workers responsible for implantation equipment are believed to be at risk from exposure to both chemical (dopant compounds) and physical (ionizing radiation) agents. In an effort to characterize the chemical exposures, monitoring for chemical hazards was conducted near eleven ion implanters at three integrated circuit facilities, while ionizing radiation was monitored near four of these units at two of the facilities. The workplace monitoring suggests that ion implantation operators routinely are exposed to low-level concentrations of dopants. Although the exact nature of dopant compounds released to the work environment was not determined, area and personal samples taken during normal operating activities found concentrations of arsenic, boron and phosphorous below OSHA Permissible Exposure Limits (PELs) for related compounds; area samples collected during implanter maintenance activities suggest that a potential exists for more serious exposures. The results of badge dosimetry monitoring for ionizing radiation indicate that serious exposures are unlikely to occur while engineering controls remain intact. All emissions were detected at levels unlikely to result in exposures above the OSHA standard for the whole body (1.25 rems per calendar quarter). The success of existing controls in preventing worker exposures is discussed. Particular emphasis is given to the differential exposures likely to be experienced by operators and maintenance personnel.(ABSTRACT TRUNCATED AT 250 WORDS)

  20. dc field-emission analysis of GaAs and plasma-source ion-implanted stainless steel

    SciTech Connect

    C. Hernandez; T. Wang; T. Siggins; D. Bullard; H. F. Dylla; C. Reece; N. D. Theodore; D. M. Manos

    2003-06-01

    Field-emission studies have been performed on a GaAs wafer and a sample of its stainless-steel (SS) support electrode that are part of a photocathode gun for the 10 kW Upgrade infrared free electron laser at Jefferson Lab. The objective of the studies presented here is to characterize the effect of both the cleanliness of the wafer and the plasma-source ion-implanted layer on the electrode to suppress field emission. Field emission is the limiting factor to achieve the required 6 MV/m at the surface of the wafer. Potential field emitters are first located on the surface of 1 in. diameter samples with a dc scanning field-emission microscope at 60 MV/m, then each emitter is characterized in a scanning electron microscope equipped with an energy dispersive spectrometer. The GaAs wafer was hydrogen cleaned before the study. The results show three emitters caused by indium contamination during wafer handling. The GaAs wafer thus shows good high-voltage characteristics and the need to maintain cleanliness during handling. The SS sample is hand polished with diamond paste to a 1-m surface finish, then implanted with N2/SiO2 in a plasma-source ion-implantation chamber in preparation for the field-emission studies.

  1. Relation of slab-derived carbonate melts to kimberlite magma genesis and diamond formation

    NASA Astrophysics Data System (ADS)

    Golubkova, A.; Schmidt, M. W.

    2012-12-01

    kimberlite magma formation near the base of the continental lithosphere. At 8 GPa we also performed experiments with H2O, as phlogopite is a substantial phase in the kimberlite source. At oxygen fugacities near the CCO buffer, both peridotites were transformed into carbonated wherlites after the reaction with carbonatite melt. The "apparent" solidi of K2O- and CO2-rich wherlites lie below the mantle adiabat and are depressed to 1000°C in the presence of H2O at 8 GPa. Melts at the solidus differ from kimberlites; they are dolomitic (XCa 0.3-0.4) with low SiO2 content and high K2O (up to 30 wt% K2O at 8 GPa) and resemble high-Mg fluid inclusions in diamonds [Klein-BenDavid et al., 2009, Lithos]. Such melts could be a source of C for diamond growth at conditions when metal-saturated mantle dominates over carbonate melt and melts become "redox frozen". A second set of experiments was buffered close to the IW equilibrium to replicate this mechanism. In these experiments diamond/graphite precipitated and coexists with periclase, olivine, clinopyroxene, and K-bearing silicates in those mantle portions which become infested by alkali-rich slab-derived melts. These experiments demonstrate that slab derived carbonatite melts form diamond-bearing metasomatised mantle source regions at temperatures reigning at the base of the cold subcontinental lithosphere.

  2. Distribution of Boron Atoms in Ion Implanted Compound Semiconductors

    DTIC Science & Technology

    1988-11-22

    The nondestructive neutron depth profiling (NDP) technique has been used to measure the boron (10B) distributions in GaAs, CdTe, Hg0.7Cd0.3Te, and Hg0.85Mn0.15Te after multiple energy ion implants. The NDP results are found to be in good agreement with the theoretical ion ranges obtained from Monte Carlo computer simulations. Only minor changes in the boron profiles were seen for the chosen annealing conditions. Keywords

  3. Ion Implantation in III-V Compound Semiconductors

    DTIC Science & Technology

    1984-09-01

    340 keV H + -0 Ga P  O UES-723-292 !:• (H o>ray *P-K X - rayO Ga-K X -ray iii! RBS * ..I -iO.. 0 10I to1. 01 • .0 -. I0 1 LI =i, O I 0 01 0.J 10...Identity by blo ," pume) Ion Implantation, GaAs, Hall effect, electrical resistivity, Rutherford Backscattering (RBS), channeling, Proton induced x -ray...Mebility (jH) upon Aiinealing Temperature (TA) for 1 X 101 /cm• Dose Samples of GaAs:Mg with Three Different Capping Methods 33 p 14 Dependence of Surface

  4. Development of a microwave ion source for ion implantations

    SciTech Connect

    Takahashi, N. Murata, H.; Kitami, H.; Mitsubori, H.; Sakuraba, J.; Soga, T.; Aoki, Y.; Katoh, T.

    2016-02-15

    A microwave ion source is expected to have a long lifetime, as it has fewer consumables. Thus, we are in the process of developing a microwave ion source for ion implantation applications. In this paper, we report on a newly developed plasma chamber and the extracted P{sup +} beam currents. The volume of the plasma chamber is optimized by varying the length of a boron nitride block installed within the chamber. The extracted P{sup +} beam current is more than 30 mA, at a 25 kV acceleration voltage, using PH{sub 3} gas.

  5. Modelling of charging effects in plasma immersion ion implantation

    NASA Astrophysics Data System (ADS)

    En, William; Cheung, Nathan W.

    1995-03-01

    The charging effects of plasma immersion ion implantation on several device structures is simulated. The simulations use an analytical model which couples the interaction of the plasma and IC devices during plasma implantation. The plasma model is implemented within the circuit simulator SPICE, which allows the model to uses all of the IC device models existing within SPICE. The model of the Fowler-Nordheim tunneling current through thin gate oxides of MOS devices is demonstrated, and shown how it can be used to quantify the damage induced. Charging damage is shown to be strongly affected by the device structure.

  6. Photoreflectance Study of Boron Ion-Implanted (100) Cadmium Telluride

    NASA Technical Reports Server (NTRS)

    Amirtharaj, P. M.; Odell, M. S.; Bowman, R. C., Jr.; Alt, R. L.

    1988-01-01

    Ion implanted (100) cadmium telluride was studied using the contactless technique of photoreflectance. The implantations were performed using 50- to 400-keV boron ions to a maximum dosage of 1.5 x 10(16)/sq cm, and the annealing was accomplished at 500 C under vacuum. The spectral measurements were made at 77 K near the E(0) and E(1) critical points; all the spectra were computer-fitted to Aspnes' theory. The spectral line shapes from the ion damaged, partially recovered and undamaged, or fully recovered regions could be identified, and the respective volume fraction of each phase was estimated.

  7. Pulsed-electron-beam annealing of ion-implantation damage

    NASA Technical Reports Server (NTRS)

    Greenwald, A. C.; Kirkpatrick, A. R.; Little, R. G.; Minnucci, J. A.

    1979-01-01

    Short-duration high-intensity pulsed electron beams have been used to anneal ion-implantation damage in silicon and to electrically activate the dopant species. Lattice regrowth and dopant activation were determined using He(+)-4 backscattering, SEM, TEM, and device performance characteristics as diagnostic techniques. The annealing mechanism is believed to be liquid-phase epitaxial regrowth initiating from the substrate. The high-temperature transient pulse produced by the electron beam causes the dopant to diffuse rapidly in the region where the liquid state is achieved.

  8. Studies on Amorphizing Silicon Using Silicon Ion Implantation.

    DTIC Science & Technology

    1985-04-01

    130-200 keV ions with doses of 5 x 1014 to 2 x 1015 2 15 2ions/cm and for 0.5 micron films, 260-300 keV ions at 1-2 x 10 ions/cm . Svensson et al...Vol. 42, pp. 707-709, 1983. 17. B. Svensson , J. Linnros & G. Holmen, "Ion Beam Induced Annealing of Radiation Damage in Silicon on Sapphire," Nucl...Mayer, Lennart Eriksson & John A. Davies, Ion Implantation in Semiconductors, Academic Press, NY, 1970. 21. L. T. Chadderton & F. H. Eisen, editors. Ion

  9. Photoreflectance Study of Boron Ion-Implanted (100) Cadmium Telluride

    NASA Technical Reports Server (NTRS)

    Amirtharaj, P. M.; Odell, M. S.; Bowman, R. C., Jr.; Alt, R. L.

    1988-01-01

    Ion implanted (100) cadmium telluride was studied using the contactless technique of photoreflectance. The implantations were performed using 50- to 400-keV boron ions to a maximum dosage of 1.5 x 10(16)/sq cm, and the annealing was accomplished at 500 C under vacuum. The spectral measurements were made at 77 K near the E(0) and E(1) critical points; all the spectra were computer-fitted to Aspnes' theory. The spectral line shapes from the ion damaged, partially recovered and undamaged, or fully recovered regions could be identified, and the respective volume fraction of each phase was estimated.

  10. RF characteristics of IHQ linac for heavy ion implantation

    NASA Astrophysics Data System (ADS)

    Ito, Takashi; Osvath, E.; Sasa, Kimikazu; Hayashizaki, Noriyosu; Isokawa, Katsushi; Schubert, H.; Hattori, Toshiyuki

    1998-04-01

    At Tokyo Institute of Technology (TIT), an Interdigital-H type Quadrupole (IHQ) linac has been constructed for application in high energy heavy ion implantation. The linac can accelerate particles with charge to mass ratio greater than 1/16 from 0.24 MeV up to 1.6 MeV (for 16O +). As a result of the low power test, the resonant frequency is 36.26 MHz, the shunt impedance is 252 MΩ/m and therefore, the required power to accelerate 16O + ion is 39.5 kW.

  11. Development of a microwave ion source for ion implantations

    NASA Astrophysics Data System (ADS)

    Takahashi, N.; Murata, H.; Kitami, H.; Mitsubori, H.; Sakuraba, J.; Soga, T.; Aoki, Y.; Katoh, T.

    2016-02-01

    A microwave ion source is expected to have a long lifetime, as it has fewer consumables. Thus, we are in the process of developing a microwave ion source for ion implantation applications. In this paper, we report on a newly developed plasma chamber and the extracted P+ beam currents. The volume of the plasma chamber is optimized by varying the length of a boron nitride block installed within the chamber. The extracted P+ beam current is more than 30 mA, at a 25 kV acceleration voltage, using PH3 gas.

  12. Electron-Beam Irradiation Effect on Thermal and Mechanical Properties of Nylon-6 Nanocomposite Fibers Infused with Diamond and Diamond Coated Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Imam, Muhammad A.; Jeelani, Shaik; Rangari, Vijaya K.; Gome, Michelle G.; Moura, Esperidiana. A. B.

    2016-02-01

    Nylon-6 is an engineering plastic with excellent properties and processability, which are essential in several industrial applications. The addition of filler such as diamond (DN) and diamond coated carbon nanotubes (CNTs) to form molded composites may increase the range of Nylon-6 applications due to the resulting increase in strength. The effects of electron-beam irradiation on these thermoplastic nanocomposites are either increase in the cross-linking or causes chain scission. In this study, DN-coated CNTs were synthesized using the sonochemical technique in the presence of cationic surfactant cetyltrimethyl ammonium bromide (CTAB). The DN-coated CNTs nanoparticles and diamond nanoparticles were then introduced into Nylon-6 polymer through a melt extrusion process to form nanocomposite fibers. They were further tested for their mechanical (Tensile) and thermal properties (thermogravimetric analysis (TGA), differential scanning calorimetry (DSC)). These composites were further exposed to the electron-beam (160kGy, 132kGy and 99kGy) irradiation using a 1.5MeV electron-beam accelerator, at room temperature, in the presence of air and tested for their thermal and mechanical properties. The best ultimate tensile strength was found to be 690MPa and 864MPa irradiated at 132 for DN/CNTs/Nylon-6 and Diamond/Nylon-6 nanocomposite fiber as compared to 346MPa and 321MPa for DN/CNTs/Nylon-6 and Diamond/Nylon-6 nanocomposite fiber without irradiation. The neat Nylon-6 tensile strength was 240MPa. These results are consistent with the activation energy calculated from TGA graphs. DSC analysis result shows that the slight increase in glass transition temperature (Tg) and decrease in melting temperature (Tm) which was expected from high electron-beam radiation dose.

  13. The use of CVD diamond to produce carbon K ultrasoft x-rays.

    PubMed

    Hill, M A

    2003-08-07

    Carbon K ultrasoft x-rays (278 eV) interact with biological material producing random, isolated tracks of single electrons with a range < 7 nm (cf width of DNA helix approximately2 nm). The electron tracks produced by these ultrasoft x-rays are similar to the numerous secondary electrons and 'track ends' produced by essentially all ionizing radiations. They therefore provide a unique tool in the study of mechanisms of radiation action in the cell. Conventional carbon targets used with the Medical Research Councils cold-cathode discharge tubes have a limited lifetime of 40-50 min. We have investigated the use of thin, freestanding diamond films produced using chemical vapour deposition techniques as a new transmission target for a cold-cathode tube. We present here a novel use of diamond to produce CK ultrasoft x-rays for irradiation purposes. The system described produces an entrance absorbed dose rate to attached cells of approximately 0.2 Gy min(-1) which due to the long target lifetime is usable for low dose-rate CK x-ray studies.

  14. CCl Radicals As a Carbon Source for Diamond Thin Film Deposition.

    PubMed

    An, Qi; Cheng, Mu-Jeng; Goddard, William A; Jaramillo-Botero, Andres

    2014-02-06

    We use first-principles quantum mechanical calculations to study diamond thin film growth on the (100) surface using CCl radicals as the carbon source. Our results show that CCl inserts into the surface dimer C-C bonds with a barrier of 10.5 kcal/mol, roughly half of the energy required for traditional CH2 insertion (22.0 kcal/mol). In addition to this, CCl has improved surface mobility (∼30.0 kcal/mol barrier, versus 35 kcal/mol for CH2, along the C-C dimer chain direction), and hydrogen abstraction from the surface is also favored via atomic Cl in the vapor phase. These results explain the lower substrate temperatures achieved in crystal diamond growth from the use of chlorinated sources in CVD processes, as opposed to the more traditional CH4/H2 derived species. Our results also suggest that further reductions in substrate temperatures are possible from using CCl as the only carbon source.

  15. The local crystallization in nanoscale diamond-like carbon films during annealing

    SciTech Connect

    Kolpakov, A. Ya. Poplavsky, A. I.; Galkina, M. E.; Gerus, J. V.; Manokhin, S. S.

    2014-12-08

    The local crystallization during annealing at 600 °C in nanoscale diamond-like carbon coatings films grown by pulsed vacuum-arc deposition method was observed using modern techniques of high-resolution transmission electron microscopy. The crystallites formed by annealing have a face-centred cubic crystal structure and grow in the direction [01{sup ¯}1{sup ¯}] as a normal to the film surface. The number and size of the crystallites depend on the initial values of the intrinsic stresses before annealing, which in turn depend on the conditions of film growth. The sizes of crystallites are 10 nm for films with initial compressive stresses of 3 GPa and 17 nm for films with initial compressive stresses of 12 GPa. Areas of local crystallization arising during annealing have a structure different from the graphite. Additionally, the investigation results of the structure of nanoscale diamond-like carbon coatings films using Raman spectroscopy method are presented, which are consistent with the transmission electron microscopy research results.

  16. A study on the preparation of diamond like carbon film and its electrodes

    NASA Astrophysics Data System (ADS)

    Wu, Shen-jiang; Li, Dang-juan; Xu, Junqi

    2016-01-01

    Diamond-like carbon (DLC) films have attracted much attention because of their excellent performance; however, the low anti-laser damage ability of such films seriously restricts their applicability. To overcome this problem, applying the bias field to the DLC film could slow down the DLC film graphitization process and improve the LIDT of the DLC film. Results showed that the longitudinal electric field could decrease the sp3 hybridization to sp2 hybridization, prevent the formation of sp2 clusters. in this study, Unbalanced magnetron sputtering (UBMS) was used to deposit a diamond-like carbon (DLC) film on Si substrates. The refractive index and extinction coefficient of the DLC films were measured using elliptical polarization spectrometer. The transmittance and the surface roughness of DLC films were examined using optical microscopy, SEM, AFM and Raman spectroscopy. Ti electrodes were deposited on DLC films directly, forming a transverse and longitudinal bias field on films' surfaces. The 3D electrodes morphology of the DLC film was observed. The electrode thickness was measured by a white-light interferometer, and the average thickness of the electrodes was 325.90 nm. The surface roughness of the electrodes was tested using the Talysurf CCI 2000 noncontact surface-measuring instrument, and the average roughness of the electrodes was 0.50 nm. The electrodes have good Ohmic contact and little thermal stress, and it can be used to form a parallel electric field.

  17. Electrochemical behavior of triflusal, aspirin and their metabolites at glassy carbon and boron doped diamond electrodes.

    PubMed

    Enache, Teodor Adrian; Fatibello-Filho, Orlando; Oliveira-Brett, Ana Maria

    2010-08-01

    The electrochemical behavior of triflusal (TRF) and aspirin (ASA), before and after hydrolysis in water and in alkaline medium using two different electrode surfaces, glassy carbon and boron doped diamond, was study by differential pulse voltammetry over a wide pH range. The hydrolysis products are 2-(hydroxyl)-4-(trifluoromethyl)-benzoic acid (HTB) for triflusal and salicylic acid (SA) for aspirin, which in vivo represent their main metabolites. The hydrolysis processes were also followed by spectrophotometry. The UV results showed complete hydrolysis after one hour for TRF and after two hours for ASA in alkaline solution. The glassy carbon electrode enables only indirect determination of TRF and ASA through the electrochemical detection of their hydrolysis products HTB and SA, respectively. The oxidation processes of HTB and SA are pH dependent and involve different numbers of electrons and protons. Moreover, the difference between the oxidation peak potential of SA and HTB was equal to 100 mV in the studied pH range from 1 to 8 due to the CF3 of the aromatic ring of HTB molecule. Due to its wider oxidation potential range, the boron doped diamond electrode was used to study the direct oxidation of TRF and ASA, as well as of their respective metabolites HTB and SA.

  18. Silicon solar cell performance deposited by diamond like carbon thin film ;Atomic oxygen effects;

    NASA Astrophysics Data System (ADS)

    Aghaei, Abbas Ail; Eshaghi, Akbar; Karami, Esmaeil

    2017-09-01

    In this research, a diamond-like carbon thin film was deposited on p-type polycrystalline silicon solar cell via plasma-enhanced chemical vapor deposition method by using methane and hydrogen gases. The effect of atomic oxygen on the functioning of silicon coated DLC thin film and silicon was investigated. Raman spectroscopy, field emission scanning electron microscopy, atomic force microscopy and attenuated total reflection-Fourier transform infrared spectroscopy were used to characterize the structure and morphology of the DLC thin film. Photocurrent-voltage characteristics of the silicon solar cell were carried out using a solar simulator. The results showed that atomic oxygen exposure induced the including oxidation, structural changes, cross-linking reactions and bond breaking of the DLC film; thus reducing the optical properties. The photocurrent-voltage characteristics showed that although the properties of the fabricated thin film were decreased after being exposed to destructive rays, when compared with solar cell without any coating, it could protect it in atomic oxygen condition enhancing solar cell efficiency up to 12%. Thus, it can be said that diamond-like carbon thin layer protect the solar cell against atomic oxygen exposure.

  19. Fluorine doping into diamond-like carbon coatings inhibits protein adsorption and platelet activation.

    PubMed

    Hasebe, Terumitsu; Yohena, Satoshi; Kamijo, Aki; Okazaki, Yuko; Hotta, Atsushi; Takahashi, Koki; Suzuki, Tetsuya

    2007-12-15

    The first major event when a medical device comes in contact with blood is the adsorption of plasma proteins. Protein adsorption on the material surface leads to the activation of the blood coagulation cascade and the inflammatory process, which impair the lifetime of the material. Various efforts have been made to minimize protein adsorption and platelet adhesion. Recently, diamond-like carbon (DLC) has received much attention because of their antithrombogenicity. We recently reported that coating silicon substrates with fluorine-doped diamond-like carbon (F-DLC) drastically suppresses platelet adhesion and activation. Here, we evaluated the protein adsorption on the material surfaces and clarified the relationship between protein adsorption and platelet behaviors, using polycarbonate and DLC- or F-DLC-coated polycarbonate. The adsorption of albumin and fibrinogen were assessed using a colorimetric protein assay, and platelet adhesion and activation were examined using a differential interference contrast microscope. A higher ratio of albumin to fibrinogen adsorption was observed on F-DLC than on DLC and polycarbonate films, indicating that the F-DLC film should prevent thrombus formation. Platelet adhesion and activation on the F-DLC films were more strongly suppressed as the amount of fluorine doping was increased. These results show that the F-DLC coating may be useful for blood-contacting devices. (c) 2007 Wiley Periodicals, Inc. J Biomed Mater Res, 2007.

  20. [The change of bacterial adhesion during deposition nitrogen-diamond like carbon coating on pure titanium].

    PubMed

    Yin, Lu; Xiao, Yun

    2011-10-01

    The aim of this study was to observe the change of bacterial adhesion on pure titanium coated with nitrogen-diamond like carbon (N-DLC) films and to guide the clinical application. N-DLC was deposited on titanium using ion plating machine, TiN film, anodic oxide film and non-deposition were used as control, then made specimens adhering on the surface of resin denture base for 6 months. The adhesion of Saccharomyces albicans on the titanium surface was observed using scanning electron microscope, and the roughness was tested by roughness detector. The number of Saccharomyces albicans adhering on diamond-like carbon film was significantly less than on the other groups (P < 0.05), and the growth of bacterial cell was inhibited and in a poor state. The largest number of adhesion and cell strains grew well on anodic oxide film group and non-deposition control group. The change of surface roughness of N-DLC film was less than other group (P < 0.05). Pure titanium coated with N-DLC film reduced the adhesion of Saccharomyces albicans after clinical application, thereby reduced the risk of denture stomatitis.

  1. Architectural design of diamond-like carbon coatings for long-lasting joint replacements.

    PubMed

    Liu, Yujing; Zhao, Xiaoli; Zhang, Lai-Chang; Habibi, Daryoush; Xie, Zonghan

    2013-07-01

    Surface engineering through the application of super-hard, low-friction coatings as a potential approach for increasing the durability of metal-on-metal replacements is attracting significant attention. In this study innovative design strategies are proposed for the development of diamond-like-carbon (DLC) coatings against the damage caused by wear particles on the joint replacements. Finite element modeling is used to analyze stress distributions induced by wear particles of different sizes in the newly-designed coating in comparison to its conventional monolithic counterpart. The critical roles of architectural design in regulating stress concentrations and suppressing crack initiation within the coatings is elucidated. Notably, the introduction of multilayer structure with graded modulus is effective in modifying the stress field and reducing the magnitude and size of stress concentrations in the DLC diamond-like-carbon coatings. The new design is expected to greatly improve the load-carrying ability of surface coatings on prosthetic implants, in addition to the provision of damage tolerance through crack arrest. Copyright © 2013 Elsevier B.V. All rights reserved.

  2. Formation of Ultrananocrystalline Diamond/Amorphous Carbon Composite Films in Vacuum Using Coaxial Arc Plasma Gun

    NASA Astrophysics Data System (ADS)

    Hanada, Kenji; Yoshida, Tomohiro; Nakagawa, You; Yoshitake, Tsuyoshi

    2010-12-01

    Ultrananocrystalline diamond (UNCD)/nonhydrogenated amorphous carbon (a-C) composite films were grown in vacuum using a coaxial arc plasma gun. From the X-ray diffraction measurement, the UNCD crystallite size was estimated to be 1.6 nm. This size is dramatically reduced from that (2.3 nm) of UNCD/hydrogenated amorphous carbon (a-C:H) composite films grown in a hydrogen atmosphere. The sp3/(sp3 + sp2) value, which was estimated from the X-ray photoemission spectrum, was also reduced to be 41%. A reason for it might be the reduction in the UNCD crystallite size. From the near-edge X-ray absorption fine-structure (NEXAFS) spectrum, it was found that the π*C=C and π*C≡C bonds are preferentially formed instead of the σ*C-H bonds in the UNCD/a-C:H films. Since the extremely small UNCD crystallites (1.6 nm) correspond to the nuclei of diamond, we consider that UNCD crystallite formation should be due predominantly to nucleation. The supersaturated condition required for nucleation is expected to be realized in the deposition using the coaxial arc plasma gun.

  3. Nanostructured titanium/diamond-like carbon multilayer films: deposition, characterization, and applications.

    PubMed

    Dwivedi, Neeraj; Kumar, Sushil; Malik, Hitendra K

    2011-11-01

    Titanium/diamond-like carbon multilayer (TDML) films were deposited using a hybrid system combining radio frequency (RF)-sputtering and RF-plasma enhanced chemical vapor deposition (PECVD) techniques under a varied number of Ti/diamond-like carbon (DLC) bilayers from 1 to 4, at high base pressure of 1 × 10(-3) Torr. The multilayer approach was used to create unique structures such as nanospheres and nanorods in TDML films, which is confirmed by scanning electron microscopy (SEM) analysis and explained by a hypothetical model. Surface composition was evaluated by X-ray photoelectron spectroscopy (XPS), whereas energy dispersive X-ray analysis (EDAX) and time-of-flight secondary ion mass spectrometer (ToF-SIMS) measurements were performed to investigate the bulk composition. X-ray diffraction (XRD) was used to evaluate the phase and crystallinity of the deposited TDML films. Residual stress in these films was found to be significantly low. These TDML films were found to have excellent nanomechanical properties with maximum hardness of 41.2 GPa. In addition, various nanomechanical parameters were calculated and correlated with each other. Owing to metallic interfacial layer of Ti in multilayer films, the optical properties, electrical properties, and photoluminescence were improved significantly. Due to versatile nanomechanical properties and biocompatibility of DLC and DLC based films, these TDML films may also find applications in biomedical science.

  4. Synthesis of (SiC){sub 3}N{sub 4} thin films by ion implantation

    SciTech Connect

    Uslu, C.; Lee, D.H.; Berta, Y.; Park, B.; Thadhani, N.N.; Poker, D.B.

    1993-12-31

    We have investigated the synthesis of carbon-silicon-nitride compounds by ion implantation. In these experiments, 100 keV nitrogen ions were implanted into polycrystalline {beta}-SiC (cubic phase) at various substrate temperatures and ion doses. These thin films were characterized by x-ray diffraction with a position-sensitive detector, transmission electron microscopy with chemical analysis, and Rutherford backscattering spectroscopy. The as-implanted samples show a buried amorphous layer at a depth of 170 nm. Peak concentration of nitrogen saturates at approximately 45 at. % with doses above {approximately} 9.0 {times} 10{sup 17} N/cm{sup 2} at 860{degree}C. These results suggest formation of a new phase by nitrogen implantation into {beta}-SiC.

  5. Low-temperature epitaxial growth of β-SiC by multiple-energy ion implantation

    NASA Astrophysics Data System (ADS)

    Zhang, Z. J.; Naramoto, H.; Miyashita, A.; Stritzker, B.; Lindner, J. K. N.

    1998-11-01

    A cubic silicon carbide (β-SiC) buried layer was synthesized in Si(111) using a combination of multienergy carbon ion implantation at room temperature and post-thermal annealing. The crystal structure and the crystalline quality of the β-SiC layer was identified by x-ray diffraction in the θ-2θ mode and was examined by pole figure measurement of x-ray diffraction. Interestingly, by using the multienergy implantation technique, the β-SiC buried layer showed epitaxial growth at annealing temperatures as low as 400 °C. At an annealing temperature of 800 °C, the x-ray pole figures show that the β-SiC buried layer has a near-perfect epitaxial relationship with the silicon substrate.

  6. Highly tunable formation of nitrogen-vacancy centers via ion implantation

    SciTech Connect

    Sangtawesin, S.; Brundage, T. O.; Atkins, Z. J.; Petta, J. R.

    2014-08-11

    We demonstrate highly tunable formation of nitrogen-vacancy (NV) centers using 20 keV {sup 15}N{sup +} ion implantation through arrays of high-resolution apertures fabricated with electron beam lithography. By varying the aperture diameters from 80 to 240 nm, as well as the average ion fluences from 5×10{sup 10} to 2 × 10{sup 11} ions/cm{sup 2}, we can control the number of ions per aperture. We analyze the photoluminescence on multiple sites with different implantation parameters and obtain ion-to-NV conversion yields of 6%–7%, consistent across all ion fluences. The implanted NV centers have spin dephasing times T{sub 2}{sup *} ∼ 3 μs, comparable to naturally occurring NV centers in high purity diamond with natural abundance {sup 13}C. With this technique, we can deterministically control the population distribution of NV centers in each aperture, allowing for the study of single or coupled NV centers and their integration into photonic structures.

  7. The depth of sub-lithospheric diamond formation and the redistribution of carbon in the deep mantle

    NASA Astrophysics Data System (ADS)

    Beyer, Christopher; Frost, Daniel J.

    2017-03-01

    respectively. Macroscopic diamond formation in rocks with pyroxenite compositions are likely facilitated in the deep mantle by higher average oxidation states and low mineral H2 O solubility compared to the surrounding mantle, which aid the mobility of C-O-H volatile species. The apparent lack of inclusions with a peridotite affinity may result from generally low oxygen fugacities in such lithologies, which reduces carbon mobility, and the lack of a suitable oxidising agent to allow diamonds to form from CH4. This glimpse of deep carbon cycle processes implies that heterogeneities in the carbon content, redox state and chemical composition of the mantle may be strongly coupled.

  8. Formation of nanocrystalline diamond in polymer like carbon films deposited by plasma CVD.

    PubMed

    Bhaduri, A; Chaudhuri, P

    2009-09-01

    Conventional plasma enhanced chemical vapour deposition (PECVD) method is generally not suitable for the growth of nanocrystalline diamond (NCD) films. However, our study shows that conditions favourable for powder formation help to grow large amount of nanocrystallites in conventional PECVD. With CH4 as the carbon source gas, dilution with Ar and moderate (50 W) rf power enhances formations of powders (nanoparticles) and C2 dimers within the plasma. On the other hand, with pure CH4 or with hydrogen diluted CH4, powder formation as also NCD growth is hindered. It is proposed that the nanoparticles formed in the plasma act as the "islands" while the C2 dimers are the "seeds" for the NCD growth. The structure of the films deposited on the grounded anode under different conditions of dilution has been studied. It is observed that with high Ar dilution the films contain NCD embedded in polymer like carbon (PLC) matrix.

  9. Bacterial adhesion to diamond-like carbon as compared to stainless steel.

    PubMed

    Soininen, Antti; Tiainen, Veli-Matti; Konttinen, Yrjö T; van der Mei, Henny C; Busscher, Henk J; Sharma, Prashant K

    2009-08-01

    Recent studies suggest that diamond-like carbon (DLC) coatings are suitable candidates for application on biomedical devices and implants, due to their high hardness, low friction, high wear and corrosion resistance, chemical inertness, smoothness, and tissue and blood compatibility. However, most studies have neglected the potential susceptibility of DLC coatings to bacterial adhesion, which is the first step in the development of implant-related infections. This study compares adhesion of seven bacterial strains, commonly implicated in implant-related infections, to tetrahedral amorphous carbon, with their adhesion to AISI 316L surgical steel. The results show that bacterial adhesion to DLC was similar to the adhesion to commonly used stainless steel. This suggests that DLC coating can be advantageously used on implants made of AISI 316L or other materials without increasing the risk to implant-related infections.

  10. Ion Implantation Metallurgy: A Study of the Composition, Structure and Corrosion Behavior of Surface Alloys Formed by Ion Implantation.

    DTIC Science & Technology

    1980-04-01

    Composition of 304 Stainless Steel %Cr ’Y Ni % Mn % Si % Mo % C % N % S % P 18.18 8.48 1.75 0.5 0.36 0.051 0.05 0.005 0.028 Coupons of 7x7xl mm were cut from...anodic- ally dissolved metal and subsequent incorporation into the passive film via a bridging bond with the bound water at the nearby passive film...IMPLANTATION - INDUCED AMORPHICITY IN GOLD Ion implantation has been shown to produce highly metastable phases similar to those formed by ultra-rapid

  11. Self-organized surface ripple pattern formation by ion implantation

    NASA Astrophysics Data System (ADS)

    Hofsäss, Hans; Zhang, Kun; Bobes, Omar

    2016-10-01

    Ion induced ripple pattern formation on solid surfaces has been extensively studied in the past and the theories describing curvature dependent ion erosion as well as redistribution of recoil atoms have been very successful in explaining many features of the pattern formation. Since most experimental studies use noble gas ion irradiation, the incorporation of the ions into the films is usually neglected. In this work we show that the incorporation or implantation of non-volatile ions also leads to a curvature dependent term in the equation of motion of a surface height profile. The implantation of ions can be interpreted as a negative sputter yield; and therefore, the effect of ion implantation is opposite to the one of ion erosion. For angles up to about 50°, implantation of ions stabilizes the surface, whereas above 50°, ion implantation contributes to the destabilization of the surface. We present simulations of the curvature coefficients using the crater function formalism and we compare the simulation results to the experimental data on the ion induced pattern formation using non-volatile ions. We present several model cases, where the incorporation of ions is a crucial requirement for the pattern formation.

  12. Osteogenic activity and antibacterial effect of zinc ion implanted titanium.

    PubMed

    Jin, Guodong; Cao, Huiliang; Qiao, Yuqin; Meng, Fanhao; Zhu, Hongqin; Liu, Xuanyong

    2014-05-01

    Titanium (Ti) and its alloys are widely used as orthopedic and dental implants. In this work, zinc (Zn) was implanted into oxalic acid etched titanium using plasma immersion ion implantation technology. Scanning electron microscopy and X-ray photoelectron spectroscopy were used to investigate the surface morphology and composition of Zn-implanted titanium. The results indicate that the depth profile of zinc in Zn-implanted titanium resembles a Gaussian distribution, and zinc exists in the form of ZnO at the surface whereas in the form of metallic Zn in the interior. The Zn-implanted titanium can significantly stimulate proliferation of osteoblastic MC3T3-E1 cells as well as initial adhesion, spreading activity, ALP activity, collagen secretion and extracellular matrix mineralization of the rat mesenchymal stem cells. The Zn-implanted titanium presents partly antibacterial effect on both Escherichia coli and Staphylococcus aureus. The ability of the Zn-implanted titanium to stimulate cell adhesion, proliferation and differentiation as well as the antibacterial effect on E. coli can be improved by increasing implantation time even to 2 h in this work, indicating that the content of zinc implanted in titanium can easily be controlled within the safe concentration using plasma immersion ion implantation technology. The Zn-implanted titanium with excellent osteogenic activity and partly antibacterial effect can serve as useful candidates for orthopedic and dental implants. Copyright © 2014 Elsevier B.V. All rights reserved.

  13. Surface modification by ion implantation and ion beam mixing

    NASA Astrophysics Data System (ADS)

    Rivière, J. P.

    1992-05-01

    After its successful applications in the semiconductor industry, ion implantation is being employed for other technical applications. The main process in ion implantation is the introduction of additive elements to change the composition and properties of the surface region of a material. We present results demonstrating the important improvement of the wear resistance and friction in a NiTi alloy implanted with nitrogen. The formation of hard TiN precipitates embedded in an amorphous layer is responsible for such modifications. The generation of many atomic displacements in collision cascades during implantation can be also employed as a modification process itself. For instance, the chemical disordering in an implanted Fe60Al40 alloy induces a para- to ferromagnetic transition. The formation of an amorphous surface alloy by ion irradiation at a temperature of 15 K has been shown in Ni50Al50 by in situ RBS, channelling and TEM. The new method of dynamic ion mixing (DIM) combines ion bombardment with simultaneous material deposition and allows thicker adherent coatings to be built up, this is shown for both metallic Cu50Ni50 and ceramic TiB2 coatings. Recent results demonstrating a significant increase in fatigue lifetime of a coated 316 L stainless steel are also reported and discussed.

  14. Direct temperature monitoring for semiconductors in plasma immersion ion implantation

    NASA Astrophysics Data System (ADS)

    Tian, Xiubo; Chu, Paul K.

    2000-07-01

    In situ temperature monitoring is extremely important in plasma immersion ion implantation (PIII) of semiconductors. For instance, the silicon wafer must be heated to 600 °C or higher in separation by plasma implantation of oxygen, and in the PIII/ion-cut process, the wafer temperature must remain below 300 °C throughout the experiment. In this article, we present a thermocouple-based direct temperature measurement system for planar samples such as silicon wafers. In order to ensure reliable high-voltage operation and overall electrical isolation, the thermocouple assembly and wires are integrated into the sample chuck and feedthrough. Hydrogen plasma immersion ion implantation is performed in silicon to demonstrate the effectiveness and reliability of the device. Our experimental results indicate that instrumental parameters such as implantation voltage, pulse duration, and pulsing frequency affect the sample temperature to a different extent. The measured temperature rise is higher than that predicted by a theoretical model based on the Child-Langmuir law. The discrepancy is attributed to the finite-sample size and the nonplanar, conformal plasma sheath.

  15. Lateral Magnetically Modulated Multilayers by Combining Ion Implantation and Lithography.

    PubMed

    Menéndez, Enric; Modarresi, Hiwa; Petermann, Claire; Nogués, Josep; Domingo, Neus; Liu, Haoliang; Kirby, Brian J; Mohd, Amir Syed; Salhi, Zahir; Babcock, Earl; Mattauch, Stefan; Van Haesendonck, Chris; Vantomme, André; Temst, Kristiaan

    2017-03-01

    The combination of lithography and ion implantation is demonstrated to be a suitable method to prepare lateral multilayers. A laterally, compositionally, and magnetically modulated microscale pattern consisting of alternating Co (1.6 µm wide) and Co-CoO (2.4 µm wide) lines has been obtained by oxygen ion implantation into a lithographically masked Au-sandwiched Co thin film. Magnetoresistance along the lines (i.e., current and applied magnetic field are parallel to the lines) reveals an effective positive giant magnetoresistance (GMR) behavior at room temperature. Conversely, anisotropic magnetoresistance and GMR contributions are distinguished at low temperature (i.e., 10 K) since the O-implanted areas become exchange coupled. This planar GMR is principally ascribed to the spatial modulation of coercivity in a spring-magnet-type configuration, which results in 180° Néel extrinsic domain walls at the Co/Co-CoO interfaces. The versatility, in terms of pattern size, morphology, and composition adjustment, of this method offers a unique route to fabricate planar systems for, among others, spintronic research and applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. FeN foils by nitrogen ion-implantation

    SciTech Connect

    Jiang, Yanfeng; Wang, Jian-Ping; Al Mehedi, Md; Fu, Engang; Wang, Yongqiang

    2014-05-07

    Iron nitride samples in foil shape (free standing, 500 nm in thickness) were prepared by a nitrogen ion-implantation method. To facilitate phase transformation, the samples were bonded on the substrate followed by a post-annealing step. By using two different substrates, single crystal Si and GaAs, structural and magnetic properties of iron nitride foil samples prepared with different nitrogen ion fluences were characterized. α″-Fe{sub 16}N{sub 2} phase in iron nitride foil samples was obtained and confirmed by the proposed approach. A hard magnetic property with coercivity up to 780 Oe was achieved for the FeN foil samples bonded on Si substrate. The feasibility of using nitrogen ion implantation techniques to prepare FeN foil samples up to 500 nm thickness with a stable martensitic phase under high ion fluences has been demonstrated. A possible mechanism was proposed to explain this result. This proposed method could potentially be an alternative route to prepare rare-earth-free FeN bulk magnets by stacking and pressing multiple free-standing thick α″-Fe{sub 16}N{sub 2} foils together.

  17. Ion-implantation and analysis for doped silicon slot waveguides

    NASA Astrophysics Data System (ADS)

    Deam, L.; Stavrias, N.; Lee, K. K.; McCallum, J. C.

    2012-10-01

    We have utilised ion implantation to fabricate silicon nanocrystal sensitised erbium-doped slot waveguide structures in a Si/SiO2/Si layered configuration and photoluminescence (PL) and Rutherford backscattering spectrometry (RBS) to analyse these structures. Slot waveguide structures in which light is confined to a nanometre-scale low-index region between two high-index regions potentially offer significant advantages for realisation of electrically-pumped Si devices with optical gain and possibly quantum optical devices. We are currently investigating an alternative pathway in which high quality thermal oxides are grown on silicon and ion implantation is used to introduce the Er and Si-ncs into the SiO2 layer. This approach provides considerable control over the Er and Si-nc concentrations and depth profiles which is important for exploring the available parameter space and developing optimised structures. RBS is well-suited to compositional analysis of these layered structures. To improve the depth sensitivity we have used a 1 MeV α beam and results indicate that a layered silicon-Er:SiO2/silicon structure has been fabricated as desired. In this paper structural results will be compared to Er photoluminescence profiles for samples processed under a range of conditions.

  18. Ion sources for energy extremes of ion implantation (invited)

    SciTech Connect

    Hershcovitch, A.; Johnson, B. M.; Batalin, V. A.; Kropachev, G. N.; Kuibeda, R. P.; Kulevoy, T. V.; Kolomiets, A. A.; Pershin, V. I.; Petrenko, S. V.; Rudskoy, I.; Seleznev, D. N.; Bugaev, A. S.; Gushenets, V. I.; Litovko, I. V.; Oks, E. M.; Yushkov, G. Yu.; Masunov, E. S.; Polozov, S. M.; Poole, H. J; Storozhenko, P. A.

    2008-02-15

    For the past four years a joint research and development effort designed to develop steady state, intense ion sources has been in progress with the ultimate goal to develop ion sources and techniques that meet the two energy extreme range needs of meV and hundreads of eV ion implanters. This endeavor has already resulted in record steady state output currents of high charge state of antimony and phosphorus ions: P{sup 2+} [8.6 pmA (particle milliampere)], P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+}Sb{sup 4+}, Sb{sup 5+}, and Sb{sup 6+} respectively. For low energy ion implantation, our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA (electrical milliampere) of positive decaborane ions was extracted at 10 keV and smaller currents of negative decaborane ions were also extracted. Additionally, boron current fraction of over 70% was extracted from a Bernas-Calutron ion source, which represents a factor of 3.5 improvement over currently employed ion sources.

  19. ION SOURCES FOR ENERGY EXTREMES OF ION IMPLANTATION.

    SciTech Connect

    HERSCHCOVITCH,A.; JOHNSON, B.M.; BATALIN, V.A.; KROPACHEV, G.N.; KUIBEDA, R.P.; KULEVOY, T.V.; KOLOMIETS, A.A.; PERSHIN, V.I.; PETRENKO, S.V.; RUDSKOY, I.; SELEZNEV, D.N.; BUGAEV, A.S.; GUSHENETS, V.I.; LITOVKO, I.V.; OKS, E.M.; YUSHKOV, G. YU.; MASEUNOV, E.S.; POLOZOV, S.M.; POOLE, H.J.; STOROZHENKO, P.A.; SVAROVSKI, YA.

    2007-08-26

    For the past four years a joint research and development effort designed to develop steady state, intense ion sources has been in progress with the ultimate goal to develop ion sources and techniques, which meet the two energy extreme range needs of mega-electron-volt and 100's of electron-volt ion implanters. This endeavor has already resulted in record steady state output currents of high charge state of Antimony and Phosphorous ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb{sup 4+}, Sb{sup 5+}, and Sb{sup 6+} respectively. For low energy ion implantation our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA of positive Decaborane ions were extracted at 10 keV and smaller currents of negative Decaborane ions were also extracted. Additionally, Boron current fraction of over 70% was extracted from a Bemas-Calutron ion source, which represents a factor of 3.5 improvement over currently employed ion sources.

  20. Ion-implanted epitaxially grown ZnSe

    NASA Technical Reports Server (NTRS)

    Chernow, F.

    1975-01-01

    The use of ZnSe to obtain efficient, short wavelength injection luminescence was investigated. It was proposed that shorter wavelength emission and higher efficiency be achieved by employing a p-i-n diode structure rather than the normal p-n diode structure. The intervening i layer minimizes concentration quenching effects and the donor-acceptor pair states leading to long wavelength emission. The surface p layer was formed by ion implantation; implantation of the i layer rather than the n substrate permits higher, uncompensated p-type doping. An ion implanted p-n junction in ZnSe is efficiency-limited by high electron injection terminating in nonradiative recombination at the front surface, and by low hole injection resulting from the inability to obtain high conductivity p-type surface layers. While the injection ratio in p-n junctions was determined by the radio of majority carrier concentrations, the injection ratio in p-i-n structures was determined by the mobility ratios and/or space charge neutrality requirements in the i layer.

  1. Miniaturized EAPs with compliant electrodes fabricated by ion implantation

    NASA Astrophysics Data System (ADS)

    Shea, H.

    2011-04-01

    Miniaturizing dielectric electroactive polymer (EAP) actuators will lead to highly-integrated mechanical systems on a chip, combining dozens to thousands of actuators and sensors on a few cm2. We present here µm to mm scale electroactive polymer (EAP) devices, batch fabricated on the chip or wafer scale, based on ion-implanted electrodes. Low-energy (2-10 keV) implantation of gold ions into a silicone elastomer leads to compliant stretchable electrodes consisting of a buried 20 nm thick layer of gold nanoparticles in a silicone matrix. These electrodes: 1) conduct at strains up to 175%, 2) are patternable on the µm scale, 3) have stiffness similar to silicone, 4) have good conductivity, and 5) excellent adhesion since implanted in the silicone. The EAP devices consist of 20 to 30 µm thick silicone membranes with µm to mm-scale ion-implanted electrodes on both sides, bonded to a holder. Depending on electrode shape and membrane size, several actuation modes are possible. Characterization of 3mm diameter bi-directional buckling mode actuators, mm-scale tunable lens arrays, 2-axis beam steering mirrors, as well as arrays of 72 cell-size (100x200 µm2) actuators to apply mechanical strain to single cells are reported. Speeds of up to several kHz are observed.

  2. Mechanical properties of ion-implanted tungsten-5 wt% tantalum

    NASA Astrophysics Data System (ADS)

    Armstrong, D. E. J.; Wilkinson, A. J.; Roberts, S. G.

    2011-12-01

    Ion implantation has been used to simulate neutron damage in W-5wt%Ta alloy manufactured by arc melting. Implantations were carried out at damage levels of 0.07, 1.2, 13 and 33 displacements per atom (dpa). The mechanical properties of the ion-implanted layer were investigated by nanoindentation. The hardness increases rapidly from 7.3 GPa in the unimplanted condition to 8.8 GPa at 0.07 dpa. Above this damage level, the increase in hardness is lower, and the hardness change saturates by 13 dpa. In the initial portion of the load-displacement curves, the indentations in unimplanted material show a large 'initial pop-in' corresponding to the onset of plasticity. This is not seen in the implanted samples at any doses. The change in plasticity has also been studied using the nanoindenter in scanning mode to produce a topographical scan around indentations. In the unimplanted condition there is an extensive pile-up around the indentation. At damage levels of 0.07 and 1.2 dpa the extent and height of pile-up are much less. The reasons for this are under further investigation.

  3. Observations of Ag diffusion in ion implanted SiC

    DOE PAGES

    Gerczak, Tyler J.; Leng, Bin; Sridharan, Kumar; ...

    2015-03-17

    The nature and magnitude of Ag diffusion in SiC has been a topic of interest in connection with the performance of tristructural isotropic (TRISO) coated particle fuel for high temperature gas-cooled nuclear reactors. Ion implantation diffusion couples have been revisited to continue developing a more complete understanding of Ag fission product diffusion in SiC. Ion implantation diffusion couples fabricated from single crystal 4H-SiC and polycrystalline 3C-SiC substrates and exposed to 1500–1625°C, were investigated in this study by transmission electron microscopy and secondary ion mass spectrometry (SIMS). The high dynamic range of SIMS allowed for multiple diffusion régimes to be investigated,more » including enhanced diffusion by implantation-induced defects and grain boundary (GB) diffusion in undamaged SiC. Lastly, estimated diffusion coefficients suggest GB diffusion in bulk SiC does not properly describe the release observed from TRISO fuel.« less

  4. Diamond Coatings

    NASA Technical Reports Server (NTRS)

    1990-01-01

    Advances in materials technology have demonstrated that it is possible to get the advantages of diamond in a number of applications without the cost penalty, by coating and chemically bonding an inexpensive substrate with a thin film of diamond-like carbon (DLC). Diamond films offer tremendous technical and economic potential in such advances as chemically inert protective coatings; machine tools and parts capable of resisting wear 10 times longer; ball bearings and metal cutting tools; a broad variety of optical instruments and systems; and consumer products. Among the American companies engaged in DLC commercialization is Diamonex, Inc., a diamond coating spinoff of Air Products and Chemicals, Inc. Along with its own proprietary technology for both polycrystalline diamond and DLC coatings, Diamonex is using, under an exclusive license, NASA technology for depositing DLC on a substrate. Diamonex is developing, and offering commercially, under the trade name Diamond Aegis, a line of polycrystalline diamond-coated products that can be custom tailored for optical, electronic and engineering applications. Diamonex's initial focus is on optical products and the first commercial product is expected in late 1990. Other target applications include electronic heat sink substrates, x-ray lithography masks, metal cutting tools and bearings.

  5. Improving nanocrystalline diamond coatings for micro end mills

    NASA Astrophysics Data System (ADS)

    Heaney, Patrick J.

    A new method is presented for coating 300 mum diameter tungsten carbide (WC) micro end mills with diamond using a hot filament chemical vapor deposition (HF-CVD) method. This method has been developed to create uniform, conformal and continuous diamond coatings. Initial work is shown to prove the feasibility and concept of the project. This was the first work known to coat and evaluate the machining performance WC micro end mills. The performance of uncoated and coated micro end mills was evaluated by dry machining channels in 6061-T6 aluminum. The test results showed a 75% and 90% decrease in both cutting and trust forces for machining, respectfully. The coated tools produced a more predictable surface finish with no burring. These improved results are due to the superior tribological properties of diamond against aluminum. Initial results indicated severe problems with coating delamination causing complete tool failure. After proving the initial concept, new methods for optimizing the coating and improving performance were studied. Each optimization step is monitored through surface analysis techniques to monitor changes in coating morphology and diamond quality. Nucleation density was increased by improving the seed method, using ultra dispersed diamond (UDD) seed. The increase in nucleation density allowed the synthesis of coatings as thin as 60 nm. The adhesion of the coating to the tool was improved through carbon ion implantation (CII). CII is a different surface preparation technique that deactivates the effect of Co, while not weakening the tool. CII also creates a great nucleation layer which diamond can directly grow from, allowing the diamond coating to chemically bond to the substrate improving adhesion and eliminating the need for a seed layer. These thin coatings were shown to be of high quality sp3 trigonaly bonded diamond that resulted in lower machining forces with less delamination. The 90% reduction in machining forces that thin conformal

  6. Ion implantation for corrosion inhibition of aluminum alloys in saline media

    SciTech Connect

    Williams, J.M. ); Gonzales, A. ); Quintana, J. ); Lee, I.-S.; Buchanan, R.A. ); Burns, F.C.; Culbertson, R.J.; Levy, M. . Materials Technology Lab.); Treglio, J.R. (ISM

    1990-01-01

    The effects of ion implantation treatments on corrosion of 2014 and 1100 aluminum in saline media were investigated. Implanted ions were N, Si, Ti and Cr. Techniques included salt spray testing, electrochemical studies, Rutherford backscattering spectrometry, and profilometry. It was concluded that ion implantation of Cr is of potential practical benefit for corrosion inhibition of 2014 Al in salt environments. 4 refs., 5 figs.

  7. Isotopic fractionation of oxygen and carbon in decomposed lower-mantle inclusions in diamond

    DOE PAGES

    Kaminsky, Felix; Matzel, Jennifer; Jacobsen, Ben; ...

    2015-07-25

    Two carbonatitic mineral assemblages, calcite + wollastonite and calcite + monticellite, which are encapsulated in two diamond grains from the Rio Soriso basin in the Juina area, Mato Grosso State, Brazil, were studied utilizing the NanoSIMS technique. The assemblages were formed as the result of the decomposition of the lower-mantle assemblage calcite + CaSi-perovskite + volatile during the course of the diamond ascent under pressure conditions from 15 to less than 0.8 GPa. The oxygen and carbon isotopic compositions of the studied minerals are inhomogeneous. They fractionated during the process of the decomposition of primary minerals to very varying values:more » δ18O from –3.3 to +15.4 ‰ SMOW and δ13C from –2.8 to +9.3 ‰ VPDB. As a result, these values significantly extend the mantle values for these elements in both isotopically-light and isotopically-heavy areas.« less

  8. Isotopic fractionation of oxygen and carbon in decomposed lower-mantle inclusions in diamond

    SciTech Connect

    Kaminsky, Felix; Matzel, Jennifer; Jacobsen, Ben; Hutcheon, Ian; Wirth, Richard

    2015-07-25

    Two carbonatitic mineral assemblages, calcite + wollastonite and calcite + monticellite, which are encapsulated in two diamond grains from the Rio Soriso basin in the Juina area, Mato Grosso State, Brazil, were studied utilizing the NanoSIMS technique. The assemblages were formed as the result of the decomposition of the lower-mantle assemblage calcite + CaSi-perovskite + volatile during the course of the diamond ascent under pressure conditions from 15 to less than 0.8 GPa. The oxygen and carbon isotopic compositions of the studied minerals are inhomogeneous. They fractionated during the process of the decomposition of primary minerals to very varying values: δ18O from –3.3 to +15.4 ‰ SMOW and δ13C from –2.8 to +9.3 ‰ VPDB. As a result, these values significantly extend the mantle values for these elements in both isotopically-light and isotopically-heavy areas.

  9. Mechanical Properties of Plasma Immersion Ion Implanted PEEK for Bioactivation of Medical Devices.

    PubMed

    Wakelin, Edgar A; Fathi, Ali; Kracica, Masturina; Yeo, Giselle C; Wise, Steven G; Weiss, Anthony S; McCulloch, Dougal G; Dehghani, Fariba; Mckenzie, David R; Bilek, Marcela M M

    2015-10-21

    Plasma immersion ion implantation (PIII) is used to modify the surface properties of polyether ether ketone for biomedical applications. Modifications to the mechanical and chemical properties are characterized as a function of ion fluence (treatment time) to determine the suitability of the treated surfaces for biological applications. Young's modulus and elastic recovery were found to increase with respect to treatment time at the surface from 4.4 to 5.2 MPa and from 0.49 to 0.68, respectively. The mechanical properties varied continuously with depth, forming a graded layer where the mechanical properties returned to untreated values deep within the layer. The treated surface layer exhibited cracking under cyclical loads, associated with an increased modulus due to dehydrogenation and cross-linking; however, it did not show any sign of delamination, indicating that the modified layer is well integrated with the substrate, a critical factor for bioactive surface coatings. The oxygen concentration remained unchanged at the surface; however, in contrast to ion implanted polymers containing only carbon and hydrogen, the oxygen concentration within the treated layer was found to decrease. This effect is attributed to UV exposure and suggests that PIII treatments can modify the surface to far greater depths than previously reported. Protein immobilization on PIII treated surfaces was found to be independent of treatment time, indicating that the surface mechanical properties can be tuned for specific applications without affecting the protein coverage. Our findings on the mechanical properties demonstrate such treatments render PEEK well suited for use in orthopedic implantable devices.

  10. Etching and structure transformations in uncured epoxy resin under rf-plasma and plasma immersion ion implantation

    NASA Astrophysics Data System (ADS)

    Kondyurin, Alexey; Bilek, Marcela

    2010-05-01

    Uncured epoxy resin was spun onto silicon wafer and treated by plasma and plasma immersion ion implantation (PIII) by argon ions with energy up to 20 keV. Ellipsometry, FTIR spectroscopy and optical microscopy methods were used for analysis. The etching, carbonization, oxidation and crosslinking effects were observed. The curing reactions in modified epoxy resin are observed without a hardening agent. A model of structural transformations in epoxy resin under plasma and ion beam irradiation is proposed and discussed in relation to processes in a space environment.

  11. Superlubricity mechanism of diamond-like carbon with glycerol. Coupling of experimental and simulation studies

    NASA Astrophysics Data System (ADS)

    DeBarros Bouchet, M. I.; Matta, C.; Le-Mogne, Th; Martin, J. Michel; Zhang, Q.; Goddard, W., III; Kano, M.; Mabuchi, Y.; Ye, J.

    2007-11-01

    We report a unique tribological system that produces superlubricity under boundary lubrication conditions with extremely little wear. This system is a thin coating of hydrogen-free amorphous Diamond-Like-Carbon (denoted as ta-C) at 353 K in a ta-C/ta-C friction pair lubricated with pure glycerol. To understand the mechanism of friction vanishing we performed ToF-SIMS experiments using deuterated glycerol and 13C glycerol. This was complemented by first-principles-based computer simulations using the ReaxFF reactive force field to create an atomistic model of ta-C. These simulations show that DLC with the experimental density of 3.24 g/cc leads to an atomistic structure consisting of a 3D percolating network of tetrahedral (sp3) carbons accounting for 71.5% of the total, in excellent agreement with the 70% deduced from our Auger spectroscopy and XANES experiments. The simulations show that the remaining carbons (with sp2 and sp1 character) attach in short chains of length 1 to 7. In sliding simulations including glycerol molecules, the surface atoms react readily to form a very smooth carbon surface containing OH-terminated groups. This agrees with our SIMS experiments. The simulations find that the OH atoms are mostly bound to surface sp1 atoms leading to very flexible elastic response to sliding. Both simulations and experiments suggest that the origin of the superlubricity arises from the formation of this OH-terminated surface.

  12. Carbon isotope fractionation during diamond growth in depleted peridotite: Counterintuitive insights from modelling water-maximum CHO fluids as multi-component systems

    NASA Astrophysics Data System (ADS)

    Stachel, T.; Chacko, T.; Luth, R. W.

    2017-09-01

    Because of the inability of depleted cratonic peridotites to effectively buffer oxygen fugacities when infiltrated by CHO or carbonatitic fluids, it has been proposed recently (Luth and Stachel, 2014) that diamond formation in peridotites typically does not occur by rock-buffered redox reactions as previously thought but by an oxygen-conserving reaction in which minor coexisting CH4 and CO2 components in a water-rich fluid react to form diamond (CO2 + CH4 = 2C + 2H2O). In such fluid-buffered systems, carbon isotope fractionation during diamond precipitation occurs in the presence of two dominant fluid carbon species. Carbon isotope modelling of diamond precipitation from mixed CH4- and CO2-bearing fluids reveals unexpected fundamental differences relative to diamond crystallization from a single carbon fluid species: (1) irrespective of which carbon fluid species (CH4 or CO2) is dominant in the initial fluid, diamond formation is invariably associated with progressive minor (<1‰) enrichment of diamond in 13C as crystallization proceeds. This is in contrast to diamond precipitation by rock-buffered redox processes from a fluid containing only a single carbon species, which can result in either progressive 13C enrichment (CO2 or carbonate fluids) or 13C depletion (CH4 fluids) in the diamond. (2) Fluid speciation is the key factor controlling diamond δ13 C values; as XCO2 (XCO2 = CO2/[CO2 + CH4]) in the initial fluid increases from 0.1 to 0.9 (corresponding to an increase in fO2 of 0.8 log units), the carbon isotope composition of the first-precipitated diamond decreases by 3.7‰. The tight mode in δ13C of - 5 ± 1 ‰ for diamonds worldwide places strict constraints on the dominant range of XCO2 in water-rich fluids responsible for diamond formation. Specifically, precipitation of diamonds with δ13C values in the range -4 to -6‰ from mantle-derived fluids with an average δ13C value of -5‰ (derived from evidence not related to diamonds) requires that

  13. Surface modification of polymeric materials by plasma immersion ion implantation

    NASA Astrophysics Data System (ADS)

    Fu, Ricky K. Y.; Cheung, I. T. L.; Mei, Y. F.; Shek, C. H.; Siu, G. G.; Chu, Paul K.; Yang, W. M.; Leng, Y. X.; Huang, Y. X.; Tian, X. B.; Yang, S. Q.

    2005-08-01

    Polymer surfaces typically have low surface tension and high chemical inertness and so they usually have poor wetting and adhesion properties. The surface properties can be altered by modifying the molecular structure using plasma immersion ion implantation (PIII). In this work, Nylon-6 was treated using oxygen/nitrogen PIII. The observed improvement in the wettability is due to the oxygenated and nitrogen (amine) functional groups created on the polymer surface by the plasma treatment. X-ray photoelectron spectroscopy (XPS) results show that nitrogen and oxygen plasma implantation result in C-C bond breaking to form the imine and amine groups as well as alcohol and/or carbonyl groups on the surface. The water contact angle results reveal that the surface wetting properties depend on the functional groups, which can be adjusted by the ratio of oxygen-nitrogen mixtures.

  14. Develop techniques for ion implantation of PLZT for adaptive optics

    NASA Astrophysics Data System (ADS)

    Craig, R. A.; Batishko, C. R.; Brimhall, J. L.; Pawlewicz, W. T.; Stahl, K. A.

    1989-11-01

    Battelle Pacific Northwest Laboratory (PNL) conducted research into the preparation and characterization of ion-implanted adaptive optic elements based on lead-lanthanum-zirconate-titanate (PLZT). Over the 4-yr effort beginning FY 1985, the ability to increase the photosensitivity of PLZT and extend it to longer wavelengths was developed. The emphasis during the last two years was to develop a model to provide a basis for choosing implantation species and parameters. Experiments which probe the electronic structure were performed on virgin and implanted PLZT samples. Also performed were experiments designed to connect the developing conceptual model with the experimental results. The emphasis in FY 1988 was to extend the photosensitivity out to diode laser wavelengths. The experiments and modelling effort indicate that manganese will form appropriate intermediate energy states to achieve the longer wavelength photosensitivity. Preliminary experiments were also conducted to deposit thin film PLZT.

  15. Planar InAs photodiodes fabricated using He ion implantation.

    PubMed

    Sandall, Ian; Tan, Chee Hing; Smith, Andrew; Gwilliam, Russell

    2012-04-09

    We have performed Helium (He) ion implantation on InAs and performed post implant annealing to investigate the effect on the sheet resistance. Using the transmission line model (TLM) we have shown that the sheet resistance of a p⁺ InAs layer, with a nominal doping concentration of 1x10¹⁸ cm⁻³, can increase by over 5 orders of magnitude upon implantation. We achieved a sheet resistance of 1x10⁵ Ω/Square in an 'as-implanted' sample and with subsequent annealing this can be further increased to 1x10⁷ Ω/Square. By also performing implantation on p-i-n structures we have shown that it is possible to produce planar photodiodes with comparable dark currents and quantum efficiencies to chemically etched reference mesa InAs photodiodes.

  16. Versatile, high-sensitivity faraday cup array for ion implanters

    DOEpatents

    Musket, Ronald G.; Patterson, Robert G.

    2003-01-01

    An improved Faraday cup array for determining the dose of ions delivered to a substrate during ion implantation and for monitoring the uniformity of the dose delivered to the substrate. The improved Faraday cup array incorporates a variable size ion beam aperture by changing only an insertable plate that defines the aperture without changing the position of the Faraday cups which are positioned for the operation of the largest ion beam aperture. The design enables the dose sensitivity range, typically 10.sup.11 -10.sup.18 ions/cm.sup.2 to be extended to below 10.sup.6 ions/cm.sup.2. The insertable plate/aperture arrangement is structurally simple and enables scaling to aperture areas between <1 cm.sup.2 and >750 cm.sup.2, and enables ultra-high vacuum (UHV) applications by incorporation of UHV-compatible materials.

  17. Stoichiometric disturbances in compound semiconductors due to ion implantation

    NASA Technical Reports Server (NTRS)

    Avila, R. E.; Fung, C. D.

    1986-01-01

    A method is developed to calculate the depth distribution of the local stoichiometric disturbance (SD) resulting from ion implantation in binary-compound substrates. The calculation includes first-order recoils considering projected range straggle of projectiles and recoils and lateral straggle of recoils. The method uses tabulated final-range statistics to infer the projectile range distributions at intermediate energies. This approach greatly simplifies the calculation with little compromise on accuracy as compared to existing procedures. As an illustration, the SD profile is calculated for implantation of boron, silicon, and aluminum in silicon carbide. The results for the latter case suggest that the SD may be responsible for otherwise unexplained distortions in the annealed aluminum profile. A comparison with calculations by other investigators using the Boltzmann transport equation shows good agreement.

  18. Above room temperature ferromagnetism in Mn-ion implanted Si

    NASA Astrophysics Data System (ADS)

    Bolduc, M.; Awo-Affouda, C.; Stollenwerk, A.; Huang, M. B.; Ramos, F. G.; Agnello, G.; Labella, V. P.

    2005-01-01

    Above room temperature ferromagnetic behavior is achieved in Si through Mn ion implantation. Three-hundred-keV Mn+ ions were implanted to 0.1% and 0.8% peak atomic concentrations, yielding a saturation magnetization of 0.3emu/g at 300K for the highest concentration as measured using a SQUID magnetometer. The saturation magnetization increased by ˜2× after annealing at 800°C for 5min . The Curie temperature for all samples was found to be greater than 400K . A significant difference in the temperature-dependent remnant magnetization between the implanted p-type and n-type Si is observed, giving strong evidence that a Si-based diluted magnetic semiconductor can be achieved.

  19. Bubble formation in Zr alloys under heavy ion implantation

    SciTech Connect

    Pagano, L. Jr.; Motta, A.T.; Birtcher, R.C.

    1995-12-01

    Kr ions were used in the HVEM/Tandem facility at ANL to irradiate several Zr alloys, including Zircaloy-2 and -4, at 300-800 C to doses up to 2{times}10{sup 16}ion.cm{sup -2}. Both in-situ irradiation of thin foils as well as irradiation of bulk samples with an ion implanter were used in this study. For the thin foil irradiations, a distribution of small bubbles in the range of 30-100 {angstrom} was found at all temperatures with the exception of the Cr-rich Valloy where 130 {angstrom} bubbles were found. Irradiation of bulk samples at 700-800 C produced large faceted bubbles up to 300 {angstrom} after irradiation to 2{times}10{sup 16}ion.cm{sup -2}. Results are examined in context of existing models for bubble formation and growth in other metals.

  20. Deep Trench Doping by Plasma Immersion Ion Implantation in Silicon

    SciTech Connect

    Nizou, S.; Vervisch, V.; Etienne, H.; Torregrosa, F.; Roux, L.; Ziti, M.; Alquier, D.; Roy, M.

    2006-11-13

    The realization of three dimensional (3D) device structures remains a great challenge in microelectronics. One of the main technological breakthroughs for such devices is the ability to control dopant implantation along silicon trench sidewalls. Plasma Immersion Ion Implantation (PIII) has shown its wide efficiency for specific doping processing in semiconductor applications. In this work, we propose to study the capability of PIII method for large scale silicon trench doping. Ultra deep trenches with high aspect ratio were etched on 6'' N type Si wafers. Wafers were then implanted with a PIII Pulsion system using BF3 gas source at various pressures and energies. The obtained results evidence that PIII can be used and are of grateful help to define optimized processing conditions to uniformly dope silicon trench sidewalls through the wafers.