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Sample records for carbon nanotube transistors

  1. Carbon nanotube electrodes in organic transistors.

    PubMed

    Valitova, Irina; Amato, Michele; Mahvash, Farzaneh; Cantele, Giovanni; Maffucci, Antonio; Santato, Clara; Martel, Richard; Cicoira, Fabio

    2013-06-07

    The scope of this Minireview is to provide an overview of the recent progress on carbon nanotube electrodes applied to organic thin film transistors. After an introduction on the general aspects of the charge injection processes at various electrode-semiconductor interfaces, we discuss the great potential of carbon nanotube electrodes for organic thin film transistors and the recent achievements in the field.

  2. Proton Damage Effects on Carbon Nanotube Field-Effect Transistors

    DTIC Science & Technology

    2014-06-19

    PROTON DAMAGE EFFECTS ON CARBON NANOTUBE FIELD-EFFECT TRANSISTORS THESIS Evan R. Kemp, Ctr...United States. AFIT-ENP-T-14-J-39 PROTON DAMAGE EFFECTS ON CARBON NANOTUBE FIELD-EFFECT TRANSISTORS THESIS Presented to...PROTON DAMAGE EFFECTS ON CARBON NANOTUBE FIELD-EFFECT TRANSISTORS Evan R. Kemp, BS Ctr, USAF Approved: // Signed

  3. Stretchable transistors with buckled carbon nanotube films as conducting channels

    DOEpatents

    Arnold, Michael S; Xu, Feng

    2015-03-24

    Thin-film transistors comprising buckled films comprising carbon nanotubes as the conductive channel are provided. Also provided are methods of fabricating the transistors. The transistors, which are highly stretchable and bendable, exhibit stable performance even when operated under high tensile strains.

  4. Chemical optimization of self-assembled carbon nanotube transistors.

    PubMed

    Auvray, Stéphane; Derycke, Vincent; Goffman, Marcelo; Filoramo, Arianna; Jost, Oliver; Bourgoin, Jean-Philippe

    2005-03-01

    We present the improvement of carbon nanotube field effects transistors (CNTFETs) performances by chemical tuning of the nanotube/substrate and nanotube/electrode interfaces. Our work is based on a method of selective placement of individual single walled carbon nanotubes (SWNTs) by patterned aminosilane monolayer and its use for the fabrication of self-assembled nanotube transistors. This method brings a relevant solution to the problem of systematic connection of self-organized nanotubes. The aminosilane monolayer reactivity can be used to improve carrier injection and doping level of the SWNT. We show that the Schottky barrier height at the nanotube/metal interface can be diminished in a continuous fashion down to an almost ohmic contact through these chemical treatments. Moreover, sensitivity to 20 ppb of triethylamine is demonstrated for self-assembled CNTFETs, thus opening new prospects for gas sensors taking advantages of the chemical functionality of the aminosilane used for assembling the CNTFETs.

  5. Differential Amplifier Circuits Based on Carbon Nanotube Field Effect Transistors (CNTFETs)

    DTIC Science & Technology

    2010-04-01

    Differential Amplifier Circuits Based on Carbon Nanotube Field Effect Transistors ( CNTFETs ) by Matthew Chin and Dr. Stephen Kilpatrick...20783-1197 ARL-TR-5151 April 2010 Differential Amplifier Circuits Based on Carbon Nanotube Field Effect Transistors ( CNTFETs ) Dr...AND SUBTITLE Differential Amplifier Circuits Based on Carbon Nanotube Field Effect Transistors ( CNTFETs ) 5a. CONTRACT NUMBER 5b. GRANT NUMBER

  6. Electroluminescence from single-wall carbon nanotube network transistors.

    PubMed

    Adam, E; Aguirre, C M; Marty, L; St-Antoine, B C; Meunier, F; Desjardins, P; Ménard, D; Martel, R

    2008-08-01

    The electroluminescence (EL) properties from single-wall carbon nanotube network field-effect transistors (NNFETs) and small bundle carbon nanotube field effect transistors (CNFETs) are studied using spectroscopy and imaging in the near-infrared (NIR). At room temperature, NNFETs produce broad (approximately 180 meV) and structured NIR spectra, while they are narrower (approximately 80 meV) for CNFETs. EL emission from NNFETs is located in the vicinity of the minority carrier injecting contact (drain) and the spectrum of the emission is red shifted with respect to the corresponding absorption spectrum. A phenomenological model based on a Fermi-Dirac distribution of carriers in the nanotube network reproduces the spectral features observed. This work supports bipolar (electron-hole) current recombination as the main mechanism of emission and highlights the drastic influence of carrier distribution on the optoelectronic properties of carbon nanotube films.

  7. Mechanism of gas sensing in carbon nanotube field effect transistors

    NASA Astrophysics Data System (ADS)

    Dube, Isha

    Gas sensors based on carbon nanotubes in the field effect transistor configuration have exhibited impressive sensitivities compared to the existing technologies. However, the lack of an understanding of the gas sensing mechanism in these carbon nanotube field effect transistors (CNTFETs) has impeded setting-up a calibration standard and customization of these nano-sensors for specified gas sensing application. Calibration requires identifying fundamental transistor parameters and establishing how they vary in the presence of a gas and influence the overall sensing behavior. This work focuses on modeling the sensing behavior of a CNTFET in the presence of oxidizing (NO 2) and reducing (NH3) gases and determining how each of the transistor parameters, namely: the Schottky barrier height, Schottky barrier width and doping level of the nanotube are affected by the presence of these gases. Earlier experiments have shown that the carbon nanotube-metal interface is responsible for the observed change in the CNTFET response. The interface consists of the metal contact and the depletion region in the carbon nanotube. A change in the metal work function will change the Schottky barrier height, whereas doping of the depletion region will affect the Schottky barrier width and the doping level of the carbon nanotube. A theoretical model containing these parameters was systematically fitted to the experimental transfer characteristics for different concentrations of NO2 and NH3. A direct correlation between the measured changes in the CNTFET saturated conductance and the Schottky barrier height was found. These changes are directly related to the changes in the metal work function of the electrodes that I determined experimentally, independently, with a Kelvin probe system. The overall change in the CNTFET characteristics were explained and quantified by also including changes due to doping from molecules adsorbed at the carbon nanotube-metal interface through the parameters

  8. Charge transfer induced polarity switching in carbon nanotube transistors.

    PubMed

    Klinke, Christian; Chen, Jia; Afzali, Ali; Avouris, Phaedon

    2005-03-01

    We probed the charge transfer interaction between the amine-containing molecules hydrazine, polyaniline, and aminobutyl phosphonic acid and carbon nanotube field effect transistors (CNTFETs). We successfully converted p-type CNTFETs to n-type and drastically improved the device performance in both the ON- and OFF-transistor states, utilizing hydrazine as dopant. We effectively switched the transistor polarity between p- and n- type by accessing different oxidation states of polyaniline. We also demonstrated the flexibility of modulating the threshold voltage (Vth) of a CNTFET by engineering various charge-accepting and -donating groups in the same molecule.

  9. Carbon Nanotube Thin Film Transistors for Flat Panel Display Application.

    PubMed

    Liang, Xuelei; Xia, Jiye; Dong, Guodong; Tian, Boyuan; Peng, Lianmao

    2016-12-01

    Carbon nanotubes (CNTs) are promising materials for both high performance transistors for high speed computing and thin film transistors for macroelectronics, which can provide more functions at low cost. Among macroelectronics applications, carbon nanotube thin film transistors (CNT-TFT) are expected to be used soon for backplanes in flat panel displays (FPDs) due to their superior performance. In this paper, we review the challenges of CNT-TFT technology for FPD applications. The device performance of state-of-the-art CNT-TFTs are compared with the requirements of TFTs for FPDs. Compatibility of the fabrication processes of CNT-TFTs and current TFT technologies are critically examined. Though CNT-TFT technology is not yet ready for backplane production line of FPDs, the challenges can be overcome by close collaboration between research institutes and FPD manufacturers in the short term.

  10. Hysteresis modeling in ballistic carbon nanotube field-effect transistors

    PubMed Central

    Liu, Yian; Moura, Mateus S; Costa, Ademir J; de Almeida, Luiz Alberto L; Paranjape, Makarand; Fontana, Marcio

    2014-01-01

    Theoretical models are adapted to describe the hysteresis effects seen in the electrical characteristics of carbon nanotube field-effect transistors. The ballistic transport model describes the contributions of conduction energy sub-bands over carbon nanotube field-effect transistor drain current as a function of drain-source and gate-source voltages as well as other physical parameters of the device. The limiting-loop proximity model, originally developed to understand magnetic hysteresis, is also utilized in this work. The curves obtained from our developed model corroborate well with the experimentally derived hysteretic behavior of the transistors. Modeling the hysteresis behavior will enable designers to reliably use these effects in both analog and memory applications. PMID:25187698

  11. A spiking neuron circuit based on a carbon nanotube transistor.

    PubMed

    Chen, C-L; Kim, K; Truong, Q; Shen, A; Li, Z; Chen, Y

    2012-07-11

    A spiking neuron circuit based on a carbon nanotube (CNT) transistor is presented in this paper. The spiking neuron circuit has a crossbar architecture in which the transistor gates are connected to its row electrodes and the transistor sources are connected to its column electrodes. An electrochemical cell is incorporated in the gate of the transistor by sandwiching a hydrogen-doped poly(ethylene glycol)methyl ether (PEG) electrolyte between the CNT channel and the top gate electrode. An input spike applied to the gate triggers a dynamic drift of the hydrogen ions in the PEG electrolyte, resulting in a post-synaptic current (PSC) through the CNT channel. Spikes input into the rows trigger PSCs through multiple CNT transistors, and PSCs cumulate in the columns and integrate into a 'soma' circuit to trigger output spikes based on an integrate-and-fire mechanism. The spiking neuron circuit can potentially emulate biological neuron networks and their intelligent functions.

  12. A carbon nanotube field effect transistor with a suspended nanotube gate.

    PubMed

    Tarakanov, Yury A; Kinaret, Jari M

    2007-08-01

    We investigate theoretically field effect transistors based on single-walled carbon nanotubes (CNTFET) and explore two device geometries with suspended multiwalled carbon nanotubes (MWNT) functioning as gate electrodes. In the two geometries, a doubly or singly clamped MWNT is electrostatically deflected toward the transistor channel, allowing for a variable gate coupling and leading to, for instance, a superior subthreshold slope. We suggest that the proposed designs can be used as nanoelectromechanical switches and as detectors of mechanical motion on the nanoscale.

  13. Controlling signal transport in a carbon nanotube opto-transistor

    NASA Astrophysics Data System (ADS)

    Li, Jinjin; Chu, Yanhui; Zhu, Ka-Di

    2016-11-01

    With the highly competitive development of communication technologies, modern information manufactures place high importance on the ability to control the transmitted signal using easy miniaturization materials. A controlled and miniaturized optical information device is, therefore, vital for researchers in information and communication fields. Here we propose a controlled signal transport in a doubly clamped carbon nanotube system, where the transmitted signal can be controlled by another pump beam. Pump off results in the transmitted signal off, while pump on results in the transmitted signal on. The more pump, the more amplified output signal transmission. Analogous with traditional cavity optomechanical system, the role of optical cavity is played by a localized exciton in carbon nanotube while the role of the mechanical element is played by the nanotube vibrations, which enables the realization of an opto-transistor based on carbon nanotube. Since the signal amplification and attenuation have been observed in traditional optomechanical system, and the nanotube optomechanical system has been realized in laboratory, the proposed carbon nanotube opto-transistor could be implemented in current experiments and open the door to potential applications in modern optical networks and future quantum networks.

  14. Controlling signal transport in a carbon nanotube opto-transistor

    PubMed Central

    Li, Jinjin; Chu, Yanhui; Zhu, Ka-Di

    2016-01-01

    With the highly competitive development of communication technologies, modern information manufactures place high importance on the ability to control the transmitted signal using easy miniaturization materials. A controlled and miniaturized optical information device is, therefore, vital for researchers in information and communication fields. Here we propose a controlled signal transport in a doubly clamped carbon nanotube system, where the transmitted signal can be controlled by another pump beam. Pump off results in the transmitted signal off, while pump on results in the transmitted signal on. The more pump, the more amplified output signal transmission. Analogous with traditional cavity optomechanical system, the role of optical cavity is played by a localized exciton in carbon nanotube while the role of the mechanical element is played by the nanotube vibrations, which enables the realization of an opto-transistor based on carbon nanotube. Since the signal amplification and attenuation have been observed in traditional optomechanical system, and the nanotube optomechanical system has been realized in laboratory, the proposed carbon nanotube opto-transistor could be implemented in current experiments and open the door to potential applications in modern optical networks and future quantum networks. PMID:27849016

  15. Electrical Transport and Channel Length Modulation in Semiconducting Carbon Nanotube Field-Effect Transistors

    DTIC Science & Technology

    2013-11-25

    AEROSPACE REPORT NO. ATR-2013-01138 Electrical Transport and Channel Length Modulation in Semiconducting Carbon Nanotube Field-Effect Transistors ...Transport and Channel Length Modulation in Semiconducting Carbon Nanotube Field-Effect Transistors November 25, 2013 Adam W. Bushmaker Electronics and...Electrical Transport and Channel Length Modulation in Semiconducting Carbon Nanotube Field-Effect Transistors Approved by: U^ g jj t^yt Steven C

  16. Graphical modelling of carbon nanotube field effect transistor

    NASA Astrophysics Data System (ADS)

    Sahoo, R.; Mishra, R. R.

    2015-02-01

    Carbon nanotube Field Effect Transistors (CNTFET) are found to be one of the most promising successors to conventional Si-MOSFET. This paper presents a novel modelling for planar CNTFET based on curve fitting method. The results obtained from the model are compared with the simulated results obtained by using the nanohub simulator. Finally the accuracy of the model is discussed by calculating the normalized root mean square difference between the nanohub simulation results and those obtained from the proposed model.

  17. Thin film transistors of single-walled carbon nanotubes grown directly on glass substrates.

    PubMed

    Bae, Eun Ju; Min, Yo-Sep; Kim, Un Jeong; Park, Wanjun

    2007-12-12

    We report a transistor of randomly networked single-walled carbon nanotubes on a glass substrate. The carbon nanotube networks acting as the active components of the thin film transistor were selectively formed on the transistor channel areas that were previously patterned with catalysts to avoid the etching process for isolating nanotubes. The nanotube density was more than 50 microm(-2), which is much larger than the percolation threshold. Transistors were successfully fabricated with a conducting and transparent ZnO for the back-side gate and the top-side gate. This allows the transparent electronics or suggests thin film applications of nanotubes for future opto-electronics.

  18. Antibody-Functionalized Carbon Nanotube Transistors as Biosensors for the Detection of Prostate Cancer

    DTIC Science & Technology

    2013-09-01

    1-0206 TITLE: ANTIBODY-FUNCTIONALIZED CARBON NANOTUBE TRANSISTORS AS BIOSENSORS FOR THE DETECTION OF PROSTATE CANCER PRINCIPAL...FUNCTIONALIZED CARBON NANOTUBE TRANSISTORS AS BIOSENSORS FOR THE DETECTION OF PROSTATE CANCER 5a. CONTRACT NUMBER W81XWH-09-1-0206...Approved for public release; distribution unlimited 13. SUPPLEMENTARY NOTES 14. ABSTRACT Prostate cancer (CaP) is the most commonly diagnosed

  19. Carbon Nanotube Field-Effect Transistor for DNA Sensing

    NASA Astrophysics Data System (ADS)

    Xuan, Chu T.; Thuy, Nguyen T.; Luyen, Tran T.; Huyen, Tran T. T.; Tuan, Mai A.

    2017-01-01

    A field-effect transistor (FET) using carbon nanotubes (CNTs) as the conducting channel (CNTFET) has been developed, designed such that the CNT conducting channel (15 μm long, 700 μm wide) is directly exposed to medium containing target deoxyribonucleic acid (DNA). The CNTFET operates at high ON-current of 1.91 μA, ON/OFF-current ratio of 1.2 × 105, conductance of 4.3 μS, and leakage current of 16.4 pA. We present initial trials showing the response of the CNTFET to injection of target DNA into aqueous medium.

  20. Carbon Nanotube Synaptic Transistor Network for Pattern Recognition.

    PubMed

    Kim, Sungho; Yoon, Jinsu; Kim, Hee-Dong; Choi, Sung-Jin

    2015-11-18

    Inspired by the human brain, a neuromorphic system combining complementary metal-oxide semiconductor (CMOS) and adjustable synaptic devices may offer new computing paradigms by enabling massive neural-network parallelism. In particular, synaptic devices, which are capable of emulating the functions of biological synapses, are used as the essential building blocks for an information storage and processing system. However, previous synaptic devices based on two-terminal resistive devices remain challenging because of their variability and specific physical mechanisms of resistance change, which lead to a bottleneck in the implementation of a high-density synaptic device network. Here we report that a three-terminal synaptic transistor based on carbon nanotubes can provide reliable synaptic functions that encode relative timing and regulate weight change. In addition, using system-level simulations, the developed synaptic transistor network associated with CMOS circuits can perform unsupervised learning for pattern recognition using a simplified spike-timing-dependent plasticity scheme.

  1. Radio frequency analog electronics based on carbon nanotube transistors

    PubMed Central

    Kocabas, Coskun; Kim, Hoon-sik; Banks, Tony; Rogers, John A.; Pesetski, Aaron A.; Baumgardner, James E.; Krishnaswamy, S. V.; Zhang, Hong

    2008-01-01

    The potential to exploit single-walled carbon nanotubes (SWNTs) in advanced electronics represents a continuing, major source of interest in these materials. However, scalable integration of SWNTs into circuits is challenging because of difficulties in controlling the geometries, spatial positions, and electronic properties of individual tubes. We have implemented solutions to some of these challenges to yield radio frequency (RF) SWNT analog electronic devices, such as narrow band amplifiers operating in the VHF frequency band with power gains as high as 14 dB. As a demonstration, we fabricated nanotube transistor radios, in which SWNT devices provide all of the key functions, including resonant antennas, fixed RF amplifiers, RF mixers, and audio amplifiers. These results represent important first steps to practical implementation of SWNTs in high-speed analog circuits. Comparison studies indicate certain performance advantages over silicon and capabilities that complement those in existing compound semiconductor technologies. PMID:18227509

  2. Carbon nanotube transistor based high-frequency electronics

    NASA Astrophysics Data System (ADS)

    Schroter, Michael

    At the nanoscale carbon nanotubes (CNTs) have higher carrier mobility and carrier velocity than most incumbent semiconductors. Thus CNT based field-effect transistors (FETs) are being considered as strong candidates for replacing existing MOSFETs in digital applications. In addition, the predicted high intrinsic transit frequency and the more recent finding of ways to achieve highly linear transfer characteristics have inspired investigations on analog high-frequency (HF) applications. High linearity is extremely valuable for an energy efficient usage of the frequency spectrum, particularly in mobile communications. Compared to digital applications, the much more relaxed constraints for CNT placement and lithography combined with already achieved operating frequencies of at least 10 GHz for fabricated devices make an early entry in the low GHz HF market more feasible than in large-scale digital circuits. Such a market entry would be extremely beneficial for funding the development of production CNTFET based process technology. This talk will provide an overview on the present status and feasibility of HF CNTFET technology will be given from an engineering point of view, including device modeling, experimental results, and existing roadblocks. Carbon nanotube transistor based high-frequency electronics.

  3. Analysis of Carbon Nanotube Field-Effect-Transistors (FETs)

    NASA Technical Reports Server (NTRS)

    Yamada, Toshishige

    1999-01-01

    This five page presentation is grouped into 11 numbered viewgraphs, most of which contain one or more diagrams. Some of the diagrams are accompanied by captions, including: 2) Nanotube FET by Delft, IBM; 3) Nanotube FET/Standard MOSFET; 5) Saturation with carrier-carrier; 7) Electronic properties of carbon nanotube; 8) Theoretical nanotube FET characteristics; 11) Summary: Delft and IBM nanotube FET analysis.

  4. Carbon Nanotube Band Structure Effect on Carbon Nanotube Field Effect Transistor

    NASA Astrophysics Data System (ADS)

    Ahamdi, M. T.; Johari, Z.; Ismail, R.; Webb, J. F.

    2010-06-01

    The band structure of a carbon nanotube (CNT) near to the minimum band energy is parabolic. However it is not parabolic in other parts of the band energy. In the parabolic part, based on the confinement effect, we present an analytical model that captures the essence of the physical processes relevant to the operation of a carbon nanotube field effect transistor (CNTFET). The model covers seamlessly the whole range of transport from drift-diffusion to ballistic. It has been clarified that the intrinsic speed of CNTs is governed by the transit time of electrons. Although the transit time is more dependent on the saturation velocity than on the weak-field mobility, the feature of high-electron mobility is beneficial in the sense that the drift velocity is always maintained closer to the saturation velocity, at least at the drain end of the transistor where the electric field is necessarily high and controls the saturation current. The results obtained are applied to the modeling of the current-voltage characteristics of a CNTFET. The channel-length modulation is shown to arise from the drain velocity becoming closer to the ultimate saturation velocity as the drain voltage is increased.

  5. Sensitizing Carbon Nanotube Transistors for Single Molecule Sensor Applications

    NASA Astrophysics Data System (ADS)

    Collins, Philip G.; Akhterov, Maxim; Sims, Patrick C.; Fuller, Elliot J.; Gul, O. Tolga; Pan, Deng

    2015-03-01

    Recent work has demonstrated single-charge sensitivity in two types of carbon nanotube transistors. In one case, a two-level system near the nanotube or noncovalently attached to the nanotube perturbs the current electrostatically. In a second case, a sidewall defect or other covalent modification sensitizes one site along the conductor. Comparative research has helped reveal differences in the transduction mechanisms of the two cases and provides design rules for maximizing reliable signals for sensing applications. The covalent modifications are not mere perturbations and they are far more sensitive than noncovalent attachments, for example. However, the new degrees of freedom that accompany covalent disorder often have similar energy scales, leading to multiple independent fluctuations that degrade the overall signal-to-noise. Noncovalent sensitization generally produces a smaller signal amplitude in a background of other low-energy fluctuators, but a well-designed noncovalent linker can result in a highly predictable signal amplitudes. Furthermore, noncovalent fabrication methods are scalable, so that wafer-scale arrays of molecular sensors are most likely to follow this path. This work was supported by NSF (ECCS-1231910).

  6. Scaling carbon nanotube complementary transistors to 5-nm gate lengths

    NASA Astrophysics Data System (ADS)

    Qiu, Chenguang; Zhang, Zhiyong; Xiao, Mengmeng; Yang, Yingjun; Zhong, Donglai; Peng, Lian-Mao

    2017-01-01

    High-performance top-gated carbon nanotube field-effect transistors (CNT FETs) with a gate length of 5 nanometers can be fabricated that perform better than silicon complementary metal-oxide semiconductor (CMOS) FETs at the same scale. A scaling trend study revealed that the scaled CNT-based devices, which use graphene contacts, can operate much faster and at much lower supply voltage (0.4 versus 0.7 volts) and with much smaller subthreshold slope (typically 73 millivolts per decade). The 5-nanometer CNT FETs approached the quantum limit of FETs by using only one electron per switching operation. In addition, the contact length of the CNT CMOS devices was also scaled down to 25 nanometers, and a CMOS inverter with a total pitch size of 240 nanometers was also demonstrated.

  7. Monoclonal Antibodies Attached to Carbon Nanotube Transistors for Paclitaxel Detection

    NASA Astrophysics Data System (ADS)

    Lee, Wonbae; Lau, Calvin; Richardson, Mark; Rajapakse, Arith; Weiss, Gregory; Collins, Philip; UCI, Molecular Biology; Biochemistry Collaboration; UCI, Departments of Physics; Astronomy Collaboration

    Paclitaxel is a naturally-occurring pharmaceutical used in numerous cancer treatments, despite its toxic side effects. Partial inhibition of this toxicity has been demonstrated using weakly interacting monoclonal antibodies (3C6 and 8A10), but accurate monitoring of antibody and paclitaxel concentrations remains challenging. Here, single-molecule studies of the kinetics of antibody-paclitaxel interactions have been performed using single-walled carbon nanotube field-effect transistors. The devices were sensitized with single antibody attachments to record the single-molecule binding dynamics of paclitaxel. This label-free technique recorded a range of dynamic interactions between the antibody and paclitaxel, and it provided sensitive paclitaxel detection for pM to nM concentrations. Measurements with two different antibodies suggest ways of extending this working range and uncovering the mechanistic differences among different antibodies.

  8. Computational study of exciton generation in suspended carbon nanotube transistors.

    PubMed

    Koswatta, Siyuranga O; Perebeinos, Vasili; Lundstrom, Mark S; Avouris, Phaedon

    2008-06-01

    Optical emission from carbon nanotube transistors (CNTFETs) has recently attracted significant attention due to its potential applications. In this paper, we use a self-consistent numerical solution of the Boltzmann transport equation in the presence of both phonon and exciton scattering to present a detailed study of the operation of a partially suspended CNTFET light emitter, which has been discussed in a recent experiment. We determine the energy distribution of hot carriers in the CNTFET and, as reported in the experiment, observe localized generation of excitons near the trench-substrate junction and an exponential increase in emission intensity with a linear increase in current versus gate voltage. We further provide detailed insight into device operation and propose optimization schemes for efficient exciton generation; a deeper trench increases the generation efficiency, and use of high-k substrate oxides could lead to even larger enhancements.

  9. CMOS-based carbon nanotube pass-transistor logic integrated circuits.

    PubMed

    Ding, Li; Zhang, Zhiyong; Liang, Shibo; Pei, Tian; Wang, Sheng; Li, Yan; Zhou, Weiwei; Liu, Jie; Peng, Lian-Mao

    2012-02-14

    Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for integrated circuits is a challenge. Here we demonstrate that a significant reduction in the use of field-effect transistors can be achieved by constructing carbon nanotube-based integrated circuits based on a pass-transistor logic configuration, rather than a complementary metal-oxide semiconductor configuration. Logic gates are constructed on individual carbon nanotubes via a doping-free approach and with a single power supply at voltages as low as 0.4 V. The pass-transistor logic configurarion provides a significant simplification of the carbon nanotube-based circuit design, a higher potential circuit speed and a significant reduction in power consumption. In particular, a full adder, which requires a total of 28 field-effect transistors to construct in the usual complementary metal-oxide semiconductor circuit, uses only three pairs of n- and p-field-effect transistors in the pass-transistor logic configuration.

  10. High performance transistors via aligned polyfluorene-sorted carbon nanotubes

    SciTech Connect

    Brady, Gerald J.; Joo, Yongho; Singha Roy, Susmit; Gopalan, Padma; Arnold, Michael S.

    2014-02-24

    We evaluate the performance of exceptionally electronic-type sorted, semiconducting, aligned single-walled carbon nanotubes (s-SWCNTs) in field effect transistors (FETs). High on-conductance and high on/off conductance modulation are simultaneously achieved at channel lengths which are both shorter and longer than individual s-SWCNTs. The s-SWCNTs are isolated from heterogeneous mixtures using a polyfluorene-derivative as a selective agent and aligned on substrates via dose-controlled, floating evaporative self-assembly at densities of ∼50 s-SWCNTs μm{sup −1}. At a channel length of 9 μm the s-SWCNTs percolate to span the FET channel, and the on/off ratio and charge transport mobility are 2.2 × 10{sup 7} and 46 cm{sup 2} V{sup −1} s{sup −1}, respectively. At a channel length of 400 nm, a large fraction of the s-SWCNTs directly span the channel, and the on-conductance per width is 61 μS μm{sup −1} and the on/off ratio is 4 × 10{sup 5}. These results are considerably better than previous solution-processed FETs, which have suffered from poor on/off ratio due to spurious metallic nanotubes that bridge the channel. 4071 individual and small bundles of s-SWCNTs are tested in 400 nm channel length FETs, and all show semiconducting behavior, demonstrating the high fidelity of polyfluorenes as selective agents and the promise of assembling s-SWCNTs from solution to create high performance semiconductor electronic devices.

  11. Carbon nanotube transistor based high-frequency electronics

    NASA Astrophysics Data System (ADS)

    Schroter, Michael

    At the nanoscale carbon nanotubes (CNTs) have higher carrier mobility and carrier velocity than most incumbent semiconductors. Thus CNT based field-effect transistors (FETs) are being considered as strong candidates for replacing existing MOSFETs in digital applications. In addition, the predicted high intrinsic transit frequency and the more recent finding of ways to achieve highly linear transfer characteristics have inspired investigations on analog high-frequency (HF) applications. High linearity is extremely valuable for an energy efficient usage of the frequency spectrum, particularly in mobile communications. Compared to digital applications, the much more relaxed constraints for CNT placement and lithography combined with already achieved operating frequencies of at least 10 GHz for fabricated devices make an early entry in the low GHz HF market more feasible than in large-scale digital circuits. Such a market entry would be extremely beneficial for funding the development of production CNTFET based process technology. This talk will provide an overview on the present status and feasibility of HF CNTFET technology will be given from an engineering point of view, including device modeling, experimental results, and existing roadblocks.

  12. Towards parallel fabrication of single electron transistors using carbon nanotubes.

    PubMed

    Islam, Muhammad R; Joung, Daeha; Khondaker, Saiful I

    2015-06-07

    Single electron transistors (SETs) are considered to be promising building blocks for post CMOS era electronic devices, however, a major bottleneck for practical realization of SET based devices is a lack of a parallel fabrication approach. Here, we have demonstrated a technique for the scalable fabrication of SETs using single-walled carbon nanotubes (SWNTs). The approach is based on the integration of solution processed individual SWNTs via dielectrophoresis (DEP) at the selected position of the circuit with a 100 nm channel length, where the metal-SWNT Schottky contact works as a tunnel barrier. Measurements carried out at a low temperature (4.2 K) show that the majority of the devices with a contact resistance (RT) > 100 kΩ display SET behavior. For the devices with 100 kΩ < RT < 1 MΩ, periodic, well-defined Coulomb diamonds with a charging energy of ∼14 meV, corresponding to the transport through a single quantum dot (QD) was observed. For devices with high RT (>1 MΩ) multiple QD behavior was observed. From the transport study of 50 SWNT devices, a total of 38 devices show SET behavior giving a yield of 76%. The results presented here are a significant step forward for the practical realization of SET based devices.

  13. Imperceptible and Ultraflexible p-Type Transistors and Macroelectronics Based on Carbon Nanotubes.

    PubMed

    Cao, Xuan; Cao, Yu; Zhou, Chongwu

    2016-01-26

    Flexible thin-film transistors based on semiconducting single-wall carbon nanotubes are promising for flexible digital circuits, artificial skins, radio frequency devices, active-matrix-based displays, and sensors due to the outstanding electrical properties and intrinsic mechanical strength of carbon nanotubes. Nevertheless, previous research effort only led to nanotube thin-film transistors with the smallest bending radius down to 1 mm. In this paper, we have realized the full potential of carbon nanotubes by making ultraflexible and imperceptible p-type transistors and circuits with a bending radius down to 40 μm. In addition, the resulted transistors show mobility up to 12.04 cm(2) V(-1) S(-1), high on-off ratio (∼10(6)), ultralight weight (<3 g/m(2)), and good mechanical robustness (accommodating severe crumpling and 67% compressive strain). Furthermore, the nanotube circuits can operate properly with 33% compressive strain. On the basis of the aforementioned features, our ultraflexible p-type nanotube transistors and circuits have great potential to work as indispensable components for ultraflexible complementary electronics.

  14. High-performance carbon nanotube thin-film transistors on flexible paper substrates

    SciTech Connect

    Liu, Na; Yun, Ki Nam; Yu, Hyun-Yong; Lee, Cheol Jin; Shim, Joon Hyung

    2015-03-09

    Single-walled carbon nanotubes (SWCNTs) are promising materials as active channels for flexible transistors owing to their excellent electrical and mechanical properties. However, flexible SWCNT transistors have never been realized on paper substrates, which are widely used, inexpensive, and recyclable. In this study, we fabricated SWCNT thin-film transistors on photo paper substrates. The devices exhibited a high on/off current ratio of more than 10{sup 6} and a field-effect mobility of approximately 3 cm{sup 2}/V·s. The proof-of-concept demonstration indicates that SWCNT transistors on flexible paper substrates could be applied as low-cost and recyclable flexible electronics.

  15. Carbon nanotube network thin-film transistors on flexible/stretchable substrates

    DOEpatents

    Takei, Kuniharu; Takahashi, Toshitake; Javey, Ali

    2016-03-29

    This disclosure provides systems, methods, and apparatus for flexible thin-film transistors. In one aspect, a device includes a polymer substrate, a gate electrode disposed on the polymer substrate, a dielectric layer disposed on the gate electrode and on exposed portions of the polymer substrate, a carbon nanotube network disposed on the dielectric layer, and a source electrode and a drain electrode disposed on the carbon nanotube network.

  16. Advances in NO2 sensing with individual single-walled carbon nanotube transistors.

    PubMed

    Chikkadi, Kiran; Muoth, Matthias; Roman, Cosmin; Haluska, Miroslav; Hierold, Christofer

    2014-01-01

    The charge carrier transport in carbon nanotubes is highly sensitive to certain molecules attached to their surface. This property has generated interest for their application in sensing gases, chemicals and biomolecules. With over a decade of research, a clearer picture of the interactions between the carbon nanotube and its surroundings has been achieved. In this review, we intend to summarize the current knowledge on this topic, focusing not only on the effect of adsorbates but also the effect of dielectric charge traps on the electrical transport in single-walled carbon nanotube transistors that are to be used in sensing applications. Recently, contact-passivated, open-channel individual single-walled carbon nanotube field-effect transistors have been shown to be operational at room temperature with ultra-low power consumption. Sensor recovery within minutes through UV illumination or self-heating has been shown. Improvements in fabrication processes aimed at reducing the impact of charge traps have reduced the hysteresis, drift and low-frequency noise in carbon nanotube transistors. While open challenges such as large-scale fabrication, selectivity tuning and noise reduction still remain, these results demonstrate considerable progress in transforming the promise of carbon nanotube properties into functional ultra-low power, highly sensitive gas sensors.

  17. A 1 GHz integrated circuit with carbon nanotube interconnects and silicon transistors.

    PubMed

    Close, Gael F; Yasuda, Shinichi; Paul, Bipul; Fujita, Shinobu; Wong, H-S Philip

    2008-02-01

    Due to their excellent electrical properties, metallic carbon nanotubes are promising materials for interconnect wires in future integrated circuits. Simulations have shown that the use of metallic carbon nanotube interconnects could yield more energy efficient and faster integrated circuits. The next step is to build an experimental prototype integrated circuit using carbon nanotube interconnects operating at high speed. Here, we report the fabrication of the first stand-alone integrated circuit combining silicon transistors and individual carbon nanotube interconnect wires on the same chip operating above 1 GHz. In addition to setting a milestone by operating above 1 GHz, this prototype is also a tool to investigate carbon nanotubes on a silicon-based platform at high frequencies, paving the way for future multi-GHz nanoelectronics.

  18. A review of carbon nanotube- and graphene-based flexible thin-film transistors.

    PubMed

    Sun, Dong-Ming; Liu, Chang; Ren, Wen-Cai; Cheng, Hui-Ming

    2013-04-22

    Carbon nanotubes (CNTs) and graphene have attracted great attention for numerous applications for future flexible electronics, owing to their supreme properties including exceptionally high electronic conductivity and mechanical strength. Here, the progress of CNT- and graphene-based flexible thin-film transistors from material preparation, device fabrication techniques to transistor performance control is reviewed. State-of-the-art fabrication techniques of thin-film transistors are divided into three categories: solid-phase, liquid-phase, and gas-phase techniques, and possible scale-up approaches to achieve realistic production of flexible nanocarbon-based transistors are discussed. In particular, the recent progress in flexible all-carbon nanomaterial transistor research is highlighted, and this all-carbon strategy opens up a perspective to realize extremely flexible, stretchable, and transparent electronics with a relatively low-cost and fast fabrication technique, compared to traditional rigid silicon, metal and metal oxide electronics.

  19. Fabrication and electrical properties of single wall carbon nanotube channel and graphene electrode based transistors arrays

    SciTech Connect

    Seo, M.; Kim, H.; Kim, Y. H.; Yun, H.; McAllister, K.; Lee, S. W.; Na, J.; Kim, G. T.; Lee, B. J.; Kim, J. J.; Jeong, G. H.; Lee, I.; Kim, K. S.

    2015-07-20

    A transistor structure composed of an individual single-walled carbon nanotube (SWNT) channel with a graphene electrode was demonstrated. The integrated arrays of transistor devices were prepared by transferring patterned graphene electrode patterns on top of the aligned SWNT along one direction. Both single and multi layer graphene were used for the electrode materials; typical p-type transistor and Schottky diode behavior were observed, respectively. Based on our fabrication method and device performances, several issues are suggested and discussed to improve the device reliability and finally to realize all carbon based future electronic systems.

  20. Improvement in the I-V characteristics of carbon nanotube network transistors using microwave treatment

    NASA Astrophysics Data System (ADS)

    Han, Jung Yoon; Kim, Ju Hun; Park, Wanjun

    2012-11-01

    This work describes the effects of microwave irradiation on the transfer characteristics of single-walled carbon-nanotube network transistors. The microwave treatment dramatically increases the on-off ratio of the electrical currents by reducing the off-state current. Detailed analyses of Raman spectroscopy data, the thermal effect, and a direct image comparison suggest preferential removal of the metallic paths formed in the transistor channel. This treatment can be utilized as method to repair for electrically failed transistors even after completion of device fabrication.

  1. Carbon Nanotubes, Semiconductor Nanowires and Graphene for Thin Film Transistor and Circuit Applications

    NASA Astrophysics Data System (ADS)

    Pribat, Didier; Cojocaru, Costel-Sorin

    2011-03-01

    In this paper, we briefly review the use of carbon nanotubes and semiconductor nanowires, which represent a new class of nanomaterials actively studied for thin film transistors and electronics applications. Although these nanomaterials are usually synthesised at moderate to high temperatures, they can be transferred to any kind of substrate after growth, paving the way for the fabrication of flexible displays and large area electronics systems on plastic. Over the past few years, the field has progressed well beyond the realisation of elementary devices, since active matrix displays driven by nanowire thin film transistors have been demonstrated, as well as the fabrication of medium scale integrated circuits based on random arrays of carbon nanotubes. Also, graphene, a new nanomaterial has appeared in the landscape; although it is a zero gap semiconductor, it can still be used to make transistors, provided narrow ribbons or bilayers are used. Graphene is also a serious contender for the replacement of oxide-based transparent conducting films.

  2. Thin film nanotube transistors based on self-assembled, aligned, semiconducting carbon nanotube arrays.

    PubMed

    Engel, Michael; Small, Joshua P; Steiner, Mathias; Freitag, Marcus; Green, Alexander A; Hersam, Mark C; Avouris, Phaedon

    2008-12-23

    Thin film transistors (TFTs) are now poised to revolutionize the display, sensor, and flexible electronics markets. However, there is a limited choice of channel materials compatible with low-temperature processing. This has inhibited the fabrication of high electrical performance TFTs. Single-walled carbon nanotubes (CNTs) have very high mobilities and can be solution-processed, making thin film CNT-based TFTs a natural direction for exploration. The two main challenges facing CNT-TFTs are the difficulty of placing and aligning CNTs over large areas and low on/off current ratios due to admixture of metallic nanotubes. Here, we report the self-assembly and self-alignment of CNTs from solution into micron-wide strips that form regular arrays of dense and highly aligned CNT films covering the entire chip, which is ideally suitable for device fabrication. The films are formed from pre-separated, 99% purely semiconducting CNTs and, as a result, the CNT-TFTs exhibit simultaneously high drive currents and large on/off current ratios. Moreover, they deliver strong photocurrents and are also both photo- and electroluminescent.

  3. Study of carbon nanotube field effect transistors performance based on changes in gate parameters.

    PubMed

    Shirazi, Shaahin G; Mirzakuchaki, Sattar

    2011-12-01

    Carbon nanotubes are known as an interesting material to be used in the next generations of electronic technology, especially at nano regime. Nowadays, carbon nanotube field effect transistor or CNTFET is one of the promising devices for future electronic applications. A CNTFET which uses carbon nanotube as channel or source/drain region is the most promising candidate for replacing the current silicon transistor technology. The study of modern manufacturing approach and impact of device parameters on its performance is one of the important research fields in nanoelectronics. In this paper we study some aspects of changes in gate parameters at different channel diameters. This paper shows that for small values of diameter, increasing the dielectric constant of gate insulator doesn't help to improve the performance as value of dielectric constant of gate insulator reaches a certain amount. Also, increasing the oxide thickness of gate insulator doesn't always decrease transistor performance. For high diameter values, increasing the thickness up to a certain value improves the transistor performance.

  4. Biosensors based on carbon nanotube-network field-effect transistors.

    PubMed

    Cid, Cristina C; Riu, Jordi; Maroto, Alicia; Rius, F Xavier

    2010-01-01

    We describe in detail the different steps involved in the construction of a carbon nanotube field-effect transistor (CNTFET) based on a network of single-walled carbon nanotubes (SWCNTs), which can selectively detect human immunoglobulin G (HIgG). HIgG antibodies, which are strongly adsorbed onto the walls of the SWCNTs, are the basic elements of the recognition layer. The nonspecific binding of proteins or other interferences are avoided by covering the nonadsorbed areas of the SWCNTs with Tween 20. The CNTFET is a reagentless device that does not need labels to detect HIgG.

  5. [Application of field-effect transistor based on carbon nanotube in biosensors].

    PubMed

    Yang, Danna; Wang, Lin; Chen, Zhiqiang; Li, Sai

    2011-12-01

    With the emergence of avian flu, influence A virus and other diseases, the development of rapid, real-time, label-free biological sensors has become increasingly significant at the early detection and clinical diagnoses of various diseases. Single-walled carbon nanotubes (SWNTs) have unique one-dimensional structure, special electrical properties, good biocompatibility and size compatibility, so that the SWNTs have great potential uses in the biosensor fields due to these advantages. This article reviews recent examples of carbon nanotubes field-effect transistor (CNTFET) as a label-free biosensors for detecting a variety of biological macromolecules, such as protein, enzyme, DNA, cancer, virus, carbohydrate and so on.

  6. Robust Noise Modulation of Nonlinearity in Carbon Nanotube Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Kawahara, Toshio; Yamaguchi, Satarou; Maehashi, Kenzo; Ohno, Yasuhide; Matsumoto, Kazuhiko; Kawai, Tomoji

    2010-02-01

    Carbon nanotubes (CNTs) are one of the candidates for nanosize devices such as field-effect transistors. CNT field-effect transistors (CNTFETs) have very special properties sometimes caused by surface states. For example, they are also well known as noisy devices caused by the molecule adhesion on the surface. Nonlinear systems, however, have some advantages such as weak signal detection or enhancement in working with noise. The small signal enhancement was conventionally studied as stochastic resonance. Therefore, we study the modification of nonlinearity of the systems under noise. For actual applications, the noise is also generated from the devices. Thus, we combined the noise CNTFET and another CNT transistor for the trial nonlinear system. Then, the sine wave amplification in the transistor with 1/ f noise of CNTFETs was measured. We used two different combinations of CNTFETs for noise and nonlinear CNTFETs, and observed the robustness of the noise modification on the nonlinearity.

  7. Carbon nanotube field effect transistors under high magnetic fields

    NASA Astrophysics Data System (ADS)

    Fedorov, Georgy; Smirnov, Dmitry; Tselev, Alexander; Yang, Yanfei; Kalugin, Nikolay

    2006-03-01

    Magnetic field, when applied parallel to the CNT axis, alters the energy gap in the CNT electron spectrum with a period corresponding to one quantum of magnetic flux through the cross-section of the CNT. With available magnetic fields (10^1T by the order of magnitude), gap oscillations can be observed only in multi-wall CNTs with diameters larger than approx 5 nm, where effects of band structure variation are smeared out by defects and by quantum interference effects. As follows from [1], it is possible to separate effects of disorder from those of the band structure modification by studying magnetotransport in small diameter CNTs while controllably changing the position of the Fermi level of the CNT by electrostatic doping, i.e. by applying a gate voltage in the field effect transistor configuration. We have studied several samples of individual CTNs contacted by palladium electrodes placed on an oxidized heavily doped silicon substrate that served as a back-gate. We find that magnetoresistance of a CNT strongly depends on the Fermi level position with respect to the nanotube's charge neutrality point (CNP). Details and the analysis of our experimental data will be presented. [1] S. Roche, R. Saito, Phys. Rev. Lett. 87, 246803 (2001)

  8. Ion-sensitive field effect transistors using carbon nanotubes as the transducing layer.

    PubMed

    Cid, Cristina C; Riu, Jordi; Maroto, Alicia; Rius, F Xavier

    2008-08-01

    We report a new type of ion-sensitive field effect transistor (ISFET). This type of ISFET incorporates a new architecture, containing a network of single-walled carbon nanotubes (SWCNTs) as the transduction layer, making an external reference electrode unnecessary. To show an example of its application, the SWCNT-based ISFET is able to detect at least 10(-8) M of potassium in water using an ion-selective membrane containing valinomycin.

  9. Fundamental performance limits of carbon nanotube thin-film transistors achieved using hybrid molecular dielectrics.

    PubMed

    Sangwan, Vinod K; Ortiz, Rocio Ponce; Alaboson, Justice M P; Emery, Jonathan D; Bedzyk, Michael J; Lauhon, Lincoln J; Marks, Tobin J; Hersam, Mark C

    2012-08-28

    In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics have been achieved through independent advances in postgrowth processing to resolve metallic versus semiconducting carbon nanotube heterogeneity, in improved gate dielectrics, and in self-assembly processes. Moreover, controlled tuning of specific device components has afforded fundamental probes of the trade-offs between materials properties and device performance metrics. Nevertheless, carbon nanotube transistor performance suitable for real-world applications awaits understanding-based progress in the integration of independently pioneered device components. We achieve this here by integrating high-purity semiconducting carbon nanotube films with a custom-designed hybrid inorganic-organic gate dielectric. This synergistic combination of materials circumvents conventional design trade-offs, resulting in concurrent advances in several transistor performance metrics such as transconductance (6.5 μS/μm), intrinsic field-effect mobility (147 cm(2)/(V s)), subthreshold swing (150 mV/decade), and on/off ratio (5 × 10(5)), while also achieving hysteresis-free operation in ambient conditions.

  10. Investigating the effect of some parameters of the channel on the characteristics of tunneling carbon nanotube field-effect transistor

    NASA Astrophysics Data System (ADS)

    Valed Karimi, Najmeh; Pourasad, Yaghoub

    2016-08-01

    This paper studies p-i-n tunneling carbon nanotube field-effect transistor to investigate the effect of various parameters of the channel on the characteristics of tunneling carbon nanotube field-effect transistor. Tunneling carbon nanotube field-effect transistor (T-CNTFET) has been simulated using non-equilibrium Green's function (NEGF), and the transmission was conducted through inelastic scattering. Besides the evaluation of device performance, various parameters of the channel were also compared. One of the parameters is considered as the variable, while other parameters of the channel are constant. Then, improved characteristics were discussed by selection of some channel parameters. T-CNTFET with CNT (10, 0) with oxide thickness = 1 nm shows reduced sub-threshold swing (18 mV/decade).

  11. Multichannel carbon nanotube field-effect transistors with compound channel layer

    NASA Astrophysics Data System (ADS)

    Chen, Changxin; Zhang, Wei; Zhang, Yafei

    2009-11-01

    A multichannel carbon nanotube field-effect transistor (MC-CNTFET) with compound channel layer has been built. In this MC-CNTFET, a dispersedly directed array of long single-walled carbon nanotubes (SWCNTs) is used as primary channel layer and a randomly aligned monolayer network of short SWCNTs acts as secondary set of "bridge" channel layer, which causes large numbers of short semiconducting percolation paths formed. The device exhibits a large on-state current of 2.01 mA and simultaneously retains a high current on/off ratio of 103-104. The function dependency of the on-state current on the density of long SWCNTs and length of short SWCNTs is also presented.

  12. Quantum transport in carbon nanotube field effect transistors in high magnetic fields

    NASA Astrophysics Data System (ADS)

    Stephens, Jeffrey Dale

    The dissertation is a study of data taken from carbon nanotube field effect transistors (CNTFET). The data presented was taken at two locations, University of Pennsylvania in Philadelphia, PA and at Lehigh University in Bethlehem, PA. The samples are exposed to very low temperature using dilution refrigerator techniques and placed in high magnetic fields using a superconducting magnet. One of the main focuses will be on the effect an external magnetic field can produce on the transport properties of a CNTFET. Particular attention will be paid to the Kondo effect and Coulomb blockade phenomena. Comparisons are drawn between the observed behavior of the samples studied and with published works on carbon nanotube electronics and traditional semiconductor quantum dots.

  13. Organic nanodielectrics for low voltage carbon nanotube thin film transistors and complementary logic gates.

    PubMed

    Hur, Seung-Hyun; Yoon, Myung-Han; Gaur, Anshu; Shim, Moonsub; Facchetti, Antonio; Marks, Tobin J; Rogers, John A

    2005-10-12

    We report the implementation of three dimensionally cross-linked, organic nanodielectric multilayers as ultrathin gate dielectrics for a type of thin film transistor device that uses networks of single-walled carbon nanotubes as effective semiconductor thin films. Unipolar n- and p-channel devices are demonstrated by use of polymer coatings to control the behavior of the networks. Monolithically integrating these devices yields complementary logic gates. The organic multilayers provide exceptionally good gate dielectrics for these systems and allow for low voltage, low hysteresis operation. The excellent performance characteristics suggest that organic dielectrics of this general type could provide a promising path to SWNT-based thin film electronics.

  14. Determination of the electrostatic lever arm of carbon nanotube field effect transistors using Kelvin force microscopy

    NASA Astrophysics Data System (ADS)

    Brunel, David; Deresmes, Dominique; Mélin, Thierry

    2009-06-01

    We use Kelvin force microscopy (KFM) to study the electrostatic properties of single-walled carbon nanotube field effect transistor devices (CNTFETs) with backgate geometry at room temperature. We show that KFM maps recorded as a function of the device backgate polarization enable a complete phenomenological determination of the averaging effects associated with the KFM probe side capacitances, and thus, to obtain KFM measurements with quantitative character. The value of the electrostatic lever arm of the CNTFET is determined from KFM measurements and found in agreement with transport measurements based on Coulomb blockade.

  15. Fabrication and radio frequency characterization of carbon nanotube field effect transistor: evidence of quantum capacitance.

    PubMed

    Hwang, D H; Kang, M G; Kim, T G; Hwang, J S; Kim, D W; Whang, D; Hwang, S W

    2011-08-01

    We fabricated an radio frequency (RF) carbon nanotube field effect transistor (CNTFET) whose electrode shapes were standard RF designed ground-signal-ground (GSG)-type pads. The S-parameters measured from our RF CNTFET in the frequency range up to 6 GHz were fitted with an RF equivalent circuit, and the extracted gate capacitance was shown to be the capacitance value of the series combination of the electrostatic capacitance and the quantum capacitance. The effect of the channel resistance and the kinetic inductance was also discussed.

  16. Scattering effects on the performance of carbon nanotube field effect transistor in a compact model

    NASA Astrophysics Data System (ADS)

    Hamieh, S. D.; Desgreys, P.; Naviner, J. F.

    2010-01-01

    Carbon nanotube field-effect transistors (CNTFET) are being extensively studied as possible successors to CMOS. Device simulators have been developed to estimate their performance in sub-10-nm and device structures have been fabricated. In this work, a new compact model of single-walled semiconducting CNTFET is proposed implementing the calculation of energy conduction sub-band minima and the treatment of scattering effects through energy shift in CNTFET. The developed model has been used to simulate I-V characteristics using VHDL-AMS simulator.

  17. Ultrasensitive Detection of DNA Hybridization Using Carbon Nanotube Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Maehashi, Kenzo; Matsumoto, Kazuhiko; Kerman, Kagan; Takamura, Yuzuru; Tamiya, Eiichi

    2004-12-01

    We have sensitively detected DNA hybridization using carbon nanotube field-effect transistors (CNTFETs) in real time. Amino modified peptide nucleic acid (PNA) oligonucleotides at 5' end were covalently immobilized onto the Au surface of the back gate. For 11-mer PNA oligonucletide probe, full-complementary DNA with concentration as low as 6.8 fM solution could be effectively detected. Our CNTFET-based biochip is a promising candidate for the development of an integrated, high-throughput, multiplexed DNA biosensor for medical, forensic and environmental diagnostics.

  18. Enrichment of semiconducting single-walled carbon nanotubes by carbothermic reaction for use in all-nanotube field effect transistors.

    PubMed

    Li, Shisheng; Liu, Chang; Hou, Peng-Xiang; Sun, Dong-Ming; Cheng, Hui-Ming

    2012-11-27

    Selective removal of metallic single-walled carbon nanotubes (SWCNTs) and consequent enrichment of semiconducting SWCNTs were achieved through an efficient carbothermic reaction with a NiO thin film at a relatively low temperature of 350 °C. All-SWCNT field effect transistors (FETs) were fabricated with the aid of a patterned NiO mask, in which the as-grown SWCNTs behaving as source/drain electrodes and the remaining semiconducting SWCNTs that survive in the carbothermic reaction as a channel material. The all-SWCNT FETs demonstrate improved current ON/OFF ratios of ∼10(3).

  19. Atomic layer deposition of aluminum oxide films for carbon nanotube network transistor passivation.

    PubMed

    Grigoras, Kestutis; Zavodchikova, Marina Y; Nasibulin, Albert G; Kauppinen, Esko I; Ermolov, Vladimir; Franssila, Sami

    2011-10-01

    Ultra-thin (2-5 nm thick) aluminum oxide layers were grown on non-functionalized individual single walled carbon nanotubes (SWCNT) and their bundles by atomic layer deposition (ALD) technique in order to investigate the mechanism of the coating process. Transmission electron microscopy (TEM) was used to examine the uniformity and conformality of the coatings grown at different temperatures (80 degrees C or 220 degrees C) and with different precursors for oxidation (water and ozone). We found that bundles of SWCNTs were coated continuously, but at the same time, bare individual nanotubes remained uncoated. The successful coating of bundles was explained by the formation of interstitial pores between the individual SWCNTs constituting the bundle, where the precursor molecules can adhere, initiating the layer growth. Thicker alumina layers (20-35 nm thick) were used for the coating of bottom-gated SWCNT-network based field effect transistors (FETs). ALD layers, grown at different conditions, were found to influence the performance of the SWCNT-network FETs: low temperature ALD layers caused the ambipolarity of the channel and pronounced n-type conduction, whereas high temperature ALD processes resulted in hysteresis suppression in the transfer characteristics of the SWCNT transistors and preserved p-type conduction. Fixed charges in the ALD layer have been considered as the main factor influencing the conduction change of the SWCNT network based transistors.

  20. Recent Progress in Obtaining Semiconducting Single-Walled Carbon Nanotubes for Transistor Applications.

    PubMed

    Islam, Ahmad E; Rogers, John A; Alam, Muhammad A

    2015-12-22

    High purity semiconducting single-walled carbon nanotubes (s-SWCNTs) with a narrow diameter distribution are required for high-performance transistors. Achieving this goal is extremely challenging because the as-grown material contains mixtures of s-SWCNTs and metallic- (m-) SWCNTs with wide diameter distributions, typically inadequate for integrated circuits. Since 2000, numerous ex situ methods have been proposed to improve the purity of the s-SWCNTs. The majority of these techniques fail to maintain the quality and integrity of the s-SWCNTs with a few notable exceptions. Here, the progress in realizing high purity s-SWCNTs in as-grown and post-processed materials is highlighted. A comparison of transistor parameters (such as on/off ratio and field-effect mobility) obtained from test structures establishes the effectiveness of various methods and suggests opportunities for future improvements.

  1. Memory operation devices based on light-illumination ambipolar carbon-nanotube thin-film-transistors

    SciTech Connect

    Aïssa, B.; Nedil, M.; Kroeger, J.; Haddad, T.; Rosei, F.

    2015-09-28

    We report the memory operation behavior of a light illumination ambipolar single-walled carbon nanotube thin film field-effect transistors devices. In addition to the high electronic-performance, such an on/off transistor-switching ratio of 10{sup 4} and an on-conductance of 18 μS, these memory devices have shown a high retention time of both hole and electron-trapping modes, reaching 2.8 × 10{sup 4} s at room temperature. The memory characteristics confirm that light illumination and electrical field can act as an independent programming/erasing operation method. This could be a fundamental step toward achieving high performance and stable operating nanoelectronic memory devices.

  2. Highly stretchable carbon nanotube transistors enabled by buckled ion gel gate dielectrics

    SciTech Connect

    Wu, Meng-Yin; Chang, Tzu-Hsuan; Ma, Zhenqiang; Zhao, Juan; Xu, Feng; Jacobberger, Robert M.; Arnold, Michael S.

    2015-08-03

    Deformable field-effect transistors (FETs) are expected to facilitate new technologies like stretchable displays, conformal devices, and electronic skins. We previously demonstrated stretchable FETs based on buckled thin films of polyfluorene-wrapped semiconducting single-walled carbon nanotubes as the channel, buckled metal films as electrodes, and unbuckled flexible ion gel films as the dielectric. The FETs were stretchable up to 50% without appreciable degradation in performance before failure of the ion gel film. Here, we show that by buckling the ion gel, the integrity and performance of the nanotube FETs are extended to nearly 90% elongation, limited by the stretchability of the elastomer substrate. The FETs maintain an on/off ratio of >10{sup 4} and a field-effect mobility of 5 cm{sup 2} V{sup −1} s{sup −1} under elongation and demonstrate invariant performance over 1000 stretching cycles.

  3. Highly stretchable carbon nanotube transistors enabled by buckled ion gel gate dielectrics

    NASA Astrophysics Data System (ADS)

    Wu, Meng-Yin; Zhao, Juan; Xu, Feng; Chang, Tzu-Hsuan; Jacobberger, Robert M.; Ma, Zhenqiang; Arnold, Michael S.

    2015-08-01

    Deformable field-effect transistors (FETs) are expected to facilitate new technologies like stretchable displays, conformal devices, and electronic skins. We previously demonstrated stretchable FETs based on buckled thin films of polyfluorene-wrapped semiconducting single-walled carbon nanotubes as the channel, buckled metal films as electrodes, and unbuckled flexible ion gel films as the dielectric. The FETs were stretchable up to 50% without appreciable degradation in performance before failure of the ion gel film. Here, we show that by buckling the ion gel, the integrity and performance of the nanotube FETs are extended to nearly 90% elongation, limited by the stretchability of the elastomer substrate. The FETs maintain an on/off ratio of >104 and a field-effect mobility of 5 cm2 V-1 s-1 under elongation and demonstrate invariant performance over 1000 stretching cycles.

  4. Molecular doping of single-walled carbon nanotube transistors: optoelectronic study

    NASA Astrophysics Data System (ADS)

    Zhang, Jiangbin; Emelianov, Aleksei V.; Bakulin, Artem A.; Bobrinetskiy, Ivan I.

    2016-09-01

    Single-walled carbon nanotubes (SWCNT) are a promising material for future optoelectronic applications, including flexible electrodes and field-effect transistors. Molecular doping of carbon nanotube surface can be an effective way to control the electronic structure and charge dynamics of these material systems. Herein, two organic semiconductors with different energy level alignment in respect to SWCNT are used to dope the channel of the SWCNT-based transistor. The effects of doping on the device performance are studied with a set of optoelectronic measurements. For the studied system, we observed an opposite change in photo-resistance, depending on the type (electron donor vs electron acceptor) of the dopants. We attribute this effect to interplay between two effects: (i) the change in the carrier concentration and (ii) the formation of trapping states at the SWCNT surface. We also observed a modest 4 pA photocurrent generation in the doped systems, which indicates that the studied system could be used as a platform for multi-pulse optoelectronic experiments with photocurrent detection.

  5. Numerical study of carbon nanotube field effect transistors in presence of carbon-carbon third nearest neighbor interactions

    NASA Astrophysics Data System (ADS)

    Naderi, Ali

    2014-07-01

    In this paper, for the first time, we have used a more precise Hamiltonian matrix based on first nearest neighbor (1NN) and third nearest neighbor (3NN) carbon-carbon interactions to simulate carbon nanotube field effect transistors (CNTFETs). By taking the interactions with more distant neighbors into account, an improvement in tight-binding picture is gained. A self-consistent solution of Schrodinger equation based on nonequilibrium Green's function (NEGF) formalism coupled to a two-dimensional Poisson's equation for treating the electrostatics of the device has been employed to simulate CNTFETs. A tight-binding Hamiltonian with an atomistic (pz orbitals) mode space basis in the ballistic limits has been used to describe the carbon nanotube (CNT) region. Simulations show that in the presence of 3NN, the energy bandgap of the CNT decreases and consequently the simulated device has lower threshold voltage compared to a simulated device with just 1NN. Short channel effects study demonstrates that neglecting 3NN underestimates the subthreshold swing and overestimates ON/OFF current ratio. All these investigations show that for simulating a CNTFET more precisely, the 3NN interactions can be taken into account in addition to the 1NN.

  6. Vacuum filtration based formation of liquid crystal films of semiconducting carbon nanotubes and high performance transistor devices

    NASA Astrophysics Data System (ADS)

    King, Benjamin; Panchapakesan, Balaji

    2014-05-01

    In this paper, we report ultra-thin liquid crystal films of semiconducting carbon nanotubes using a simple vacuum filtration process. Vacuum filtration of nanotubes in aqueous surfactant solution formed nematic domains on the filter membrane surface and exhibited local ordering. A 2D fast Fourier transform was used to calculate the order parameters from scanning electron microscopy images. The order parameter was observed to be sensitive to the filtration time demonstrating different regions of transformation namely nucleation of nematic domains, nanotube accumulation and large domain growth.Transmittance versus sheet resistance measurements of such films resulted in optical to dc conductivity of σ opt/σ dc = 9.01 indicative of purely semiconducting nanotube liquid crystal network.Thin films of nanotube liquid crystals with order parameters ranging from S = 0.1-0.5 were patterned into conducting channels of transistor devices which showed high I on/I off ratios from 10-19 800 and electron mobility values μ e = 0.3-78.8 cm2 (V-s)-1, hole mobility values μ h = 0.4-287 cm2 (V-s)-1. High I on/I off ratios were observed at low order parameters and film mass. A Schottky barrier transistor model is consistent with the observed transistor characteristics. Electron and hole mobilities were seen to increase with order parameters and carbon nanotube mass fractions. A fundamental tradeoff between decreasing on/off ratio and increasing mobility with increasing nanotube film mass and order parameter is therefore concluded. Increase in order parameters of nanotubes liquid crystals improved the electronic transport properties as witnessed by the increase in σ dc/σ opt values on macroscopic films and high mobilities in microscopic transistors. Liquid crystal networks of semiconducting nanotubes as demonstrated here are simple to fabricate, transparent, scalable and could find wide ranging device applications.

  7. Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET

    PubMed Central

    2012-01-01

    The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (Ion/Ioff), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency. PMID:22901374

  8. Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET

    NASA Astrophysics Data System (ADS)

    Tan, Michael Loong Peng; Lentaris, Georgios; Amaratunga AJ, Gehan

    2012-08-01

    The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio ( I on/ I off), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency.

  9. Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET.

    PubMed

    Tan, Michael Loong Peng; Lentaris, Georgios; Amaratunga Aj, Gehan

    2012-08-19

    The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (Ion/Ioff), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency.

  10. Screen printing as a scalable and low-cost approach for rigid and flexible thin-film transistors using separated carbon nanotubes.

    PubMed

    Cao, Xuan; Chen, Haitian; Gu, Xiaofei; Liu, Bilu; Wang, Wenli; Cao, Yu; Wu, Fanqi; Zhou, Chongwu

    2014-12-23

    Semiconducting single-wall carbon nanotubes are very promising materials in printed electronics due to their excellent mechanical and electrical property, outstanding printability, and great potential for flexible electronics. Nonetheless, developing scalable and low-cost approaches for manufacturing fully printed high-performance single-wall carbon nanotube thin-film transistors remains a major challenge. Here we report that screen printing, which is a simple, scalable, and cost-effective technique, can be used to produce both rigid and flexible thin-film transistors using separated single-wall carbon nanotubes. Our fully printed top-gated nanotube thin-film transistors on rigid and flexible substrates exhibit decent performance, with mobility up to 7.67 cm2 V(-1) s(-1), on/off ratio of 10(4)∼10(5), minimal hysteresis, and low operation voltage (<10 V). In addition, outstanding mechanical flexibility of printed nanotube thin-film transistors (bent with radius of curvature down to 3 mm) and driving capability for organic light-emitting diode have been demonstrated. Given the high performance of the fully screen-printed single-wall carbon nanotube thin-film transistors, we believe screen printing stands as a low-cost, scalable, and reliable approach to manufacture high-performance nanotube thin-film transistors for application in display electronics. Moreover, this technique may be used to fabricate thin-film transistors based on other materials for large-area flexible macroelectronics, and low-cost display electronics.

  11. Intrinsic memory function of carbon nanotube-based ferroelectric field-effect transistor.

    PubMed

    Fu, Wangyang; Xu, Zhi; Bai, Xuedong; Gu, Changzhi; Wang, Enge

    2009-03-01

    We demonstrate the intrinsic memory function of ferroelectric field-effect transistors (FeFETs) based on an integration of individual single-walled carbon nanotubes (SWCNTs) and epitaxial ferroelectric films. In contrast to the previously reported "charge-storage" CNT-FET memories, whose operations are haunted by a lack of control over the "charge traps", the present CNT-FeFETs exhibit a well-defined memory hysteresis loop induced by the reversible remnant polarization of the ferroelectric films. Large memory windows approximately 4 V, data retention time up to 1 week, and ultralow power consumption (energy per bit) of femto-joule, are highlighted in this report. Further simulations and experimental results show that the memory device is valid under operation voltage less than 1 V due to an electric-field enhancement effect induced by the ultrathin SWCNTs.

  12. Towards parallel, CMOS-compatible fabrication of carbon nanotube single electron transistors

    NASA Astrophysics Data System (ADS)

    Islam, Muhammad; Joung, Daeha; Khondaker, Saiful

    2014-03-01

    We demonstrate an approach for the parallel fabrication of single electron transistor (SET) using single-walled carbon nanotube (SWNT). The approach is based on the integration of individual SWNT via dielectrophoresis (DEP) and deposition of metal top contact. We fabricate SWNT devices with a channel length of 100 nm and study their electron transport properties. We observe a connection between the SET performance and room temperature resistance (RT) of the devices. Majority (90%) of the devices with 100 K Ω 1M Ω) , devices show multiple QD behaviors, while QD was not formed for low RT (<100 K Ω) devices. This easy, simple and CMOS-compatible fabrication process will provide a much desired insight towards the wide spread application and commercialization of SWNT SET devices.

  13. Single-molecule measurements of proteins using carbon nanotube field-effect transistors

    NASA Astrophysics Data System (ADS)

    Sims, Patrick Craig

    Single-walled carbon nanotube (SWCNT) field-effect transistors (FETs) provide a promising platform for investigating proteins at the single-molecule level. Recently, we have demonstrated that SWCNT FETs have sufficient sensitivity and bandwidth to monitor the conformational motions and processivity of an individual T4 lysozyme molecule. This is accomplished by functionalizing a SWCNT FET device with a single protein and measuring the conductance versus time through the device as it is submerged in an electrolyte solution. To generalize this approach for the study of a wide variety of proteins at the single-molecule level, this dissertation investigates the conjugation process to determine and isolate the key parameters involved in functionalizing a SWCNT with a single protein, the physical basis for transducing conformational motion of a protein into an electrical signal, and finally, the general application of the technique to monitor the binary and ternary complex formation of cAMP-dependent protein kinase (PKA).

  14. Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors.

    PubMed

    Kim, Bongjun; Geier, Michael L; Hersam, Mark C; Dodabalapur, Ananth

    2017-02-01

    Ambipolar and p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated into various complementary-like circuits on the same substrate by inkjet printing. We describe the fabrication and characteristics of inverters, ring oscillators, and NAND gates based on complementary-like circuits fabricated with such TFTs as building blocks. We also show that complementary-like circuits have potential use as chemical sensors in ambient conditions since changes to the TFT characteristics of the p-channel TFTs in the circuit alter the overall operating characteristics of the circuit. The use of circuits rather than individual devices as sensors integrates sensing and signal processing functions, thereby simplifying overall system design.

  15. Pattern Recognition Using Carbon Nanotube Synaptic Transistors with an Adjustable Weight Update Protocol.

    PubMed

    Kim, Sungho; Choi, Bongsik; Lim, Meehyun; Yoon, Jinsu; Lee, Juhee; Kim, Hee-Dong; Choi, Sung-Jin

    2017-03-28

    Recent electronic applications require an efficient computing system that can perform data processing with limited energy consumption. Inspired by the massive parallelism of the human brain, a neuromorphic system (hardware neural network) may provide an efficient computing unit to perform such tasks as classification and recognition. However, the implementation of synaptic devices (i.e., the essential building blocks for emulating the functions of biological synapses) remains challenging due to their uncontrollable weight update protocol and corresponding uncertain effects on the operation of the system, which can lead to a bottleneck in the continuous design and optimization. Here, we demonstrate a synaptic transistor based on highly purified, preseparated 99% semiconducting carbon nanotubes, which can provide adjustable weight update linearity and variation margin. The pattern recognition efficacy is validated using a device-to-system level simulation framework. The enlarged margin rather than the linear weight update can enhance the fault tolerance of the recognition system, which improves the recognition accuracy.

  16. Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors

    PubMed Central

    Kim, Bongjun; Geier, Michael L.; Hersam, Mark C.; Dodabalapur, Ananth

    2017-01-01

    Ambipolar and p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated into various complementary-like circuits on the same substrate by inkjet printing. We describe the fabrication and characteristics of inverters, ring oscillators, and NAND gates based on complementary-like circuits fabricated with such TFTs as building blocks. We also show that complementary-like circuits have potential use as chemical sensors in ambient conditions since changes to the TFT characteristics of the p-channel TFTs in the circuit alter the overall operating characteristics of the circuit. The use of circuits rather than individual devices as sensors integrates sensing and signal processing functions, thereby simplifying overall system design. PMID:28145438

  17. Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Bongjun; Geier, Michael L.; Hersam, Mark C.; Dodabalapur, Ananth

    2017-02-01

    Ambipolar and p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated into various complementary-like circuits on the same substrate by inkjet printing. We describe the fabrication and characteristics of inverters, ring oscillators, and NAND gates based on complementary-like circuits fabricated with such TFTs as building blocks. We also show that complementary-like circuits have potential use as chemical sensors in ambient conditions since changes to the TFT characteristics of the p-channel TFTs in the circuit alter the overall operating characteristics of the circuit. The use of circuits rather than individual devices as sensors integrates sensing and signal processing functions, thereby simplifying overall system design.

  18. Label-free detection of DNA hybridization using carbon nanotube network field-effect transistors

    NASA Astrophysics Data System (ADS)

    Star, Alexander; Tu, Eugene; Niemann, Joseph; Gabriel, Jean-Christophe P.; Joiner, C. Steve; Valcke, Christian

    2006-01-01

    We report carbon nanotube network field-effect transistors (NTNFETs) that function as selective detectors of DNA immobilization and hybridization. NTNFETs with immobilized synthetic oligonucleotides have been shown to specifically recognize target DNA sequences, including H63D single-nucleotide polymorphism (SNP) discrimination in the HFE gene, responsible for hereditary hemochromatosis. The electronic responses of NTNFETs upon single-stranded DNA immobilization and subsequent DNA hybridization events were confirmed by using fluorescence-labeled oligonucleotides and then were further explored for label-free DNA detection at picomolar to micromolar concentrations. We have also observed a strong effect of DNA counterions on the electronic response, thus suggesting a charge-based mechanism of DNA detection using NTNFET devices. Implementation of label-free electronic detection assays using NTNFETs constitutes an important step toward low-cost, low-complexity, highly sensitive and accurate molecular diagnostics. hemochromatosis | SNP | biosensor

  19. Effect of parametric variation on the performance of single wall carbon nanotube based field effect transistor

    NASA Astrophysics Data System (ADS)

    Kumar, Avshish; Husain, Mubashshir; Khan, Ayub; Husain, Mushahid

    2014-11-01

    The effects of dielectric constant and gate insulator thickness on the performance of single wall carbon nanotube field effect transistors (CNTFETs) have been analyzed using a mathematical model based on FETToy simulator. Both the parameters are found to have significant effect on the device performance, particularly the on-current; while the on-current (ION) increases on scaling down the gate oxide thickness, the level of leakage current (IOFF) is not considerably affected. This is an advantage of CNTFET over conventional MOSFETs where the thickness of thin oxide layer causes drastic increase in gate leakage current. Our analysis results show that thinner gate oxide and larger CNT improve the performance of CNTFETs. Therefore, the performance of our simulated CNTFETs using this model has clear lead over those of conventional MOSFETs.

  20. External-Noise-Induced Small-Signal Detection with Solution-Gated Carbon Nanotube Transistor

    NASA Astrophysics Data System (ADS)

    Hakamata, Yasufumi; Ohno, Yasuhide; Maehashi, Kenzo; Inoue, Koichi; Matsumoto, Kazuhiko

    2011-04-01

    A solution-gated carbon nanotube field-effect transistor (CNTFET) based on stochastic resonance (SR) was investigated in order to enhance small-signal detection under ambient noise conditions. When noise of optimal intensity was introduced at the reference electrode in a nonlinear CNTFET, the electric double layer in the solution was modulated, resulting in SR behavior. Moreover, when the CNTFET was used as a pH sensor, high sensitivity was achieved, which enabled the detection of small differences in pH. The best results were obtained in a noisy environment; therefore, a solution-gated SR-based CNTFET operated in the subthreshold regime is a promising high-sensitivity sensor.

  1. Modeling and simulation of carbon nanotube field effect transistor and its circuit application

    NASA Astrophysics Data System (ADS)

    Singh, Amandeep; Saini, Dinesh Kumar; Agarwal, Dinesh; Aggarwal, Sajal; Khosla, Mamta; Raj, Balwinder

    2016-07-01

    The carbon nanotube field effect transistor (CNTFET) is modelled for circuit application. The model is based on the transport mechanism and it directly relates the transport mechanism with the chirality. Also, it does not consider self consistent equations and thus is used to develop the HSPICE compatible circuit model. For validation of the model, it is applied to the top gate CNTFET structure and the MATLAB simulation results are compared with the simulations of a similar structure created in NanoTCAD ViDES. For demonstrating the circuit compatibility of the model, two circuits viz. inverter and SRAM are designed and simulated in HSPICE. Finally, SRAM performance metrics are compared with those of device simulations from Nano TCAD ViDES.

  2. Noise Reduction of Carbon Nanotube Field-Effect Transistor Biosensors by Alternating Current Measurement

    NASA Astrophysics Data System (ADS)

    Yamamoto, Yasuki; Ohno, Yasuhide; Maehashi, Kenzo; Matsumoto, Kazuhiko

    2009-06-01

    We demonstrated a marked improvement of sensitivity (signal-to-noise ratio) in carbon nanotube field-effect transistor (CNTFET) sensors. The alternating current (AC) measurement with a lock-in amplifier, which suppresses the fluctuations in drain current in CNTFETs without decreasing the signal level, was adopted. The noise level of CNTFETs used in buffer solutions was greatly decreased by AC measurement. Furthermore, we investigated the sensing operations of CNTFET pH sensors and biosensors by AC measurement. The sensing performance of CNTFET sensors was markedly improved. The signal-to-noise ratio of pH sensors measured using AC was six times higher than that obtained by direct current (DC) measurement. A small amount of bovine serum albumin of 250 pM was effectively detected by CNTFET biosensors by AC measurement.

  3. Floating-gated memory based on carbon nanotube field-effect transistors with Si floating dots

    NASA Astrophysics Data System (ADS)

    Seike, Kohei; Fujii, Yusuke; Ohno, Yasuhide; Maehashi, Kenzo; Inoue, Koichi; Matsumoto, Kazuhiko

    2014-01-01

    We have fabricated a carbon nanotube field-effect transistor (CNTFET)-based nonvolatile memory device with Si floating dots. The electrical characteristics of this memory device were compared with those of devices with a HfO2 charge storage layer or Au floating dots. For a sweep width of 6 V, the memory window of the devices with the Si floating dots increased twofold as compared with that of the devices with the HfO2 layer. Moreover, the retention characteristics revealed that, for the device with the Au floating dots, the off-state had almost the same current as the on-state at the 400th s. However, the devices with the Si floating dots had longer-retention characteristics. The results indicate that CNTFET-based devices with Si floating dots are promising candidates for low-power consumption nonvolatile memory devices.

  4. Performance analysis of junctionless carbon nanotube field effect transistors using NEGF formalism

    NASA Astrophysics Data System (ADS)

    Barbastegan, Saber; Shahhoseini, Ali

    2016-04-01

    This paper presents the simulation study of a junctionless carbon nanotube field effect transistor (JL-CNTFET) and a comparison is made with the conventional CNTFET using the atomistic scale simulation, within the non-equilibrium Green’s function (NEGF) formalism. In order to have a comprehensive analysis, both analog and digital parameters of the device are studied. Results have shown that JL-CNTFET with respect to C-CNTFET shows slightly higher ION/IOFF ratio about two times larger than that of C-CNTFET, smaller electric field along channel more than three order of magnitude and reduced tunneling current about 100 times. In addition, the investigation of analog properties of both devices has exhibited that junctionless structure has a transconductance about two times and an intrinsic gain of 15 dB larger than C-CNTFET in same bias condition which makes JL-CNTFET a promising candidate for low voltage analog applications.

  5. Novel attributes and design considerations of source and drain regions in carbon nanotube transistors

    NASA Astrophysics Data System (ADS)

    Orouji, Ali A.; Ahmadmiri, S. A.

    2010-03-01

    Source and drain regions are inseparable sections of carbon nanotube field effect transistor (CNTFET) whose parameters are effective for CNTFET performance. For the first time in this paper, design considerations of source and drain regions are presented by developing a two-dimensional (2-D) full quantum simulation. The simulations have been done by the self-consistent solution of 2-D Poisson-Schrödinger equations, within the nonequilibrium Green’s function (NEGF) formalism. The effects of varying the source and drain parameters are investigated in terms of on-off current ratio, transconductance characteristics, drain conductance, and subthreshold swing. Simulation results demonstrate that we could improve the CNTFET performance with proper selection of the source and drain parameters.

  6. Modeling of Gate Bias Modulation in Carbon Nanotube Field-Effect-Transistor

    NASA Technical Reports Server (NTRS)

    Toshishige, Yamada; Biegel, Bryan A. (Technical Monitor)

    2002-01-01

    The threshold voltages of a carbon-nanotube (CNT) field-effect transistor (FET) are studied. The CNT channel is so thin that there is no voltage drop perpendicular to the gate electrode plane, and this makes the device characteristics quite unique. The relation between the voltage and the electrochemical potentials, and the mass action law for electrons and holes are examined in the context of CNTs, and inversion and accumulation threshold voltages (V(sub Ti), and V(sub Ta)) are derived. V(sub Ti) of the CNTFETs has a much stronger doping dependence than that of the metal-oxide- semiconductor FETs, while V(sub Ta) of both devices depends weakly on doping with the same functional form.

  7. LDC-CNTFET: A carbon nanotube field effect transistor with linear doping profile channel

    NASA Astrophysics Data System (ADS)

    Naderi, Ali; Keshavarzi, Parviz; Orouji, Ali A.

    2011-08-01

    In this paper, a novel carbon nanotube field effect transistor with linear doping profile channel (LDC-CNTFET) is presented. The channel impurity concentration of the proposed structure is at maximum level at source side and linearly decreases toward zero at drain side. The simulation results show that the leakage current, on-off current ratio, subthreshold swing, drain induced barrier lowering, and voltage gain of the proposed structure improve in comparison with conventional CNTFET. Also, due to spreading the impurity throughout the channel region, the proposed structure has superior performance compared with a single halo CNTFET structure with equal saturation current. Design considerations show that the proposed structure enhances the device performance all over a wide range of channel lengths.

  8. A mathematical space mapping model for ballistic carbon nanotube field-effect transistors

    NASA Astrophysics Data System (ADS)

    Emamifar, Farnousha; Yousefi, Reza

    2016-11-01

    In this study, a mathematical model is presented based on mathematical space mapping for ballistic carbon nanotube field-effect transistors. This model is generalized from another model that was based on the concept of neural space mapping to calculate the three parameters of a coarse model. These parameters were the threshold voltage, the Early voltage, and assumed constant k of a modified "level 1" MOSFET model in simulation program with integrated circuit emphasis (SPICE). In this work, three analytical relations are introduced to replace the neural networks of the main model. The comparisons between the proposed model and a well-known reference model, named FETToy, show that the proposed model had reasonable accuracy in terms of different biases and physical parameters.

  9. Metal contact effect on the performance and scaling behavior of carbon nanotube thin film transistors

    NASA Astrophysics Data System (ADS)

    Xia, Jiye; Dong, Guodong; Tian, Boyuan; Yan, Qiuping; Zhang, Han; Liang, Xuelei; Peng, Lianmao

    2016-05-01

    Metal-tube contact is known to play an important role in carbon nanotube field-effect transistors (CNT-FETs) which are fabricated on individual CNTs. Less attention has been paid to the contact effect in network type carbon nanotube thin film transistors (CNT-TFTs). In this study, we demonstrate that contact plays an even more important role in CNT-TFTs than in CNT-FETs. Although the Schottky barrier height at the metal-tube contact can be tuned by the work function of the metal, similar to the case in CNT-FETs, the contact resistance (Rc) forms a much higher proportion of the total resistance in CNT-TFTs. Interestingly, the contact resistivity was found to increase with channel length, which is a consequence of the percolating nature of the transport in CNT films, and this behavior does not exist in CNT-FETs and normal 2D Ohmic conductors. Electrical transport in CNT-TFTs has been predicted to scale with channel length by stick percolation theory. However, the scaling behavior is also impacted, or even covered up by the effect of Rc. Once the contact effect is excluded, the covered scaling behavior can be revealed correctly. A possible way of reducing Rc in CNT-TFTs was proposed. We believe the findings in this paper will strengthen our understanding of CNT-TFTs, and even accelerate the commercialization of CNT-TFT technology.Metal-tube contact is known to play an important role in carbon nanotube field-effect transistors (CNT-FETs) which are fabricated on individual CNTs. Less attention has been paid to the contact effect in network type carbon nanotube thin film transistors (CNT-TFTs). In this study, we demonstrate that contact plays an even more important role in CNT-TFTs than in CNT-FETs. Although the Schottky barrier height at the metal-tube contact can be tuned by the work function of the metal, similar to the case in CNT-FETs, the contact resistance (Rc) forms a much higher proportion of the total resistance in CNT-TFTs. Interestingly, the contact

  10. High-performance partially aligned semiconductive single-walled carbon nanotube transistors achieved with a parallel technique.

    PubMed

    Wang, Yilei; Pillai, Suresh Kumar Raman; Chan-Park, Mary B

    2013-09-09

    Single-walled carbon nanotubes (SWNTs) are widely thought to be a strong contender for next-generation printed electronic transistor materials. However, large-scale solution-based parallel assembly of SWNTs to obtain high-performance transistor devices is challenging. SWNTs have anisotropic properties and, although partial alignment of the nanotubes has been theoretically predicted to achieve optimum transistor device performance, thus far no parallel solution-based technique can achieve this. Herein a novel solution-based technique, the immersion-cum-shake method, is reported to achieve partially aligned SWNT networks using semiconductive (99% enriched) SWNTs (s-SWNTs). By immersing an aminosilane-treated wafer into a solution of nanotubes placed on a rotary shaker, the repetitive flow of the nanotube solution over the wafer surface during the deposition process orients the nanotubes toward the fluid flow direction. By adjusting the nanotube concentration in the solution, the nanotube density of the partially aligned network can be controlled; linear densities ranging from 5 to 45 SWNTs/μm are observed. Through control of the linear SWNT density and channel length, the optimum SWNT-based field-effect transistor devices achieve outstanding performance metrics (with an on/off ratio of ~3.2 × 10(4) and mobility 46.5 cm(2) /Vs). Atomic force microscopy shows that the partial alignment is uniform over an area of 20 × 20 mm(2) and confirms that the orientation of the nanotubes is mostly along the fluid flow direction, with a narrow orientation scatter characterized by a full width at half maximum (FWHM) of <15° for all but the densest film, which is 35°. This parallel process is large-scale applicable and exploits the anisotropic properties of the SWNTs, presenting a viable path forward for industrial adoption of SWNTs in printed, flexible, and large-area electronics.

  11. Rapid detection of Aspergillus flavus in rice using biofunctionalized carbon nanotube field effect transistors.

    PubMed

    Villamizar, Raquel A; Maroto, Alicia; Rius, F Xavier

    2011-01-01

    In the present study, we have used carbon nanotube field effect transistors (FET) that have been functionalized with protein G and IgG to detect Aspergillus flavus in contaminated milled rice. The adsorbed protein G on the carbon nanotubes walls enables the IgG anti-Aspergillus antibodies to be well oriented and therefore to display full antigen binding capacity for fungal antigens. A solution of Tween 20 and gelatine was used as an effective blocking agent to prevent the non-specific binding of the antibodies and other moulds and also to protect the transducer against the interferences present in the rice samples. Our FET devices were able to detect at least 10 μg/g of A. flavus in only 30 min. To evaluate the selectivity of our biosensors, Fusarium oxysporum and Penicillium chrysogenum were tested as potential competing moulds for A. flavus. We have proved that our devices are highly selective tools for detecting mycotoxigenic moulds at low concentrations in real samples.

  12. Demonstration of high current carbon nanotube enabled vertical organic field effect transistors at industrially relevant voltages

    NASA Astrophysics Data System (ADS)

    McCarthy, Mitchell

    The display market is presently dominated by the active matrix liquid crystal display (LCD). However, the active matrix organic light emitting diode (AMOLED) display is argued to become the successor to the LCD, and is already beginning its way into the market, mainly in small size displays. But, for AMOLED technology to become comparable in market share to LCD, larger size displays must become available at a competitive price with their LCD counterparts. A major issue preventing low-cost large AMOLED displays is the thin-film transistor (TFT) technology. Unlike the voltage driven LCD, the OLEDs in the AMOLED display are current driven. Because of this, the mature amorphous silicon TFT backplane technology used in the LCD must be upgraded to a material possessing a higher mobility. Polycrystalline silicon and transparent oxide TFT technologies are being considered to fill this need. But these technologies bring with them significant manufacturing complexity and cost concerns. Carbon nanotube enabled vertical organic field effect transistors (CN-VFETs) offer a unique solution to this problem (now known as the AMOLED backplane problem). The CN-VFET allows the use of organic semiconductors to be used for the semiconductor layer. Organics are known for their low-cost large area processing compatibility. Although the mobility of the best organics is only comparable to that of amorphous silicon, the CN-VFET makes up for this by orienting the channel vertically, as opposed to horizontally (like in conventional TFTs). This allows the CN-VFET to achieve sub-micron channel lengths without expensive high resolution patterning. Additionally, because the CN-VFET can be easily converted into a light emitting transistor (called the carbon nanotube enabled vertical organic light emitting transistor---CN-VOLET) by essentially stacking an OLED on top of the CN-VFET, more potential benefits can be realized. These potential benefits include, increased aperture ratio, increased OLED

  13. The Effect of Hydrophobin Protein on Conductive Properties of Carbon Nanotube Field-Effect Transistors: First Study on Sensing Mechanism.

    PubMed

    Yotprayoonsakl, Peerapong; Szilvay, Géza R; Laaksonen, Päivi; Linder, Markus B; Ahlskog, Markus

    2015-03-01

    Hydrophobin is a surface active protein having both hydrophobic and hydrophilic functional domains which has previously been used for functionalization and solubilization of graphene and carbon nanotubes. In this work, field-effect transistors based on single nanotubes have been employed for electronic detection of hydrophobin protein in phosphate buffer solution. Individual nanotubes, single- and multiwalled, are characterized by atomic force microscopy after being immersed in protein solution, showing a relatively dense coverage with hydrophobin. We have studied aspects such as nanotube length (0.3-1.2 µm) and the hysteresis effect in the gate voltage dependent conduction. When measured in ambient condition after the exposure to hydrophobin, the resistance increase has a strong dependence on the nanotube length, which we ascribe to mobility degradation and localization effects. The change could be exceptionally large when measured in-situ in solution and at suitable gate voltage conditions, which is shown to relate to the different mechanism behind the hysteresis effect.

  14. Passivation effect on gate-bias stress instability of carbon nanotube thin film transistors

    SciTech Connect

    Won Lee, Sang; Suh, Dongseok; Young Lee, Si; Hee Lee, Young

    2014-04-21

    A prior requirement of any developed transistor for practical use is the stability test. Random network carbon nanotube-thin film transistor (CNT-TFT) was fabricated on SiO{sub 2}/Si. Gate bias stress stability was investigated with various passivation layers of HfO{sub 2} and Al{sub 2}O{sub 3}. Compared to the threshold voltage shift without passivation layer, the measured values in the presence of passivation layers were reduced independent of gate bias polarity except HfO{sub 2} under positive gate bias stress (PGBS). Al{sub 2}O{sub 3} capping layer was found to be the best passivation layer to prevent ambient gas adsorption, while gas adsorption on HfO{sub 2} layer was unavoidable, inducing surface charges to increase threshold voltage shift in particular for PGBS. This high performance in the gate bias stress test of CNT-TFT even superior to that of amorphous silicon opens potential applications to active TFT industry for soft electronics.

  15. Electrical properties of carbon-nanotube-network transistors in air after gamma irradiation

    NASA Astrophysics Data System (ADS)

    Ishii, Satoshi; Yabe, Daisuke; Enomoto, Shotaro; Koshio, Shigeru; Konishi, Teruaki; Hamano, Tsuyoshi; Hirao, Toshio

    2017-02-01

    We experimentally evaluate the electrical properties of carbon nanotube (CNT)-network transistors before and after 60Co gamma-ray irradiation up to 50 kGy in an air environment. When the total dose is increased, the degree of the threshold voltage (Vth) shift towards positive gate voltages in the drain current-gate voltage (ID-VGS) characteristics decreases for total irradiation doses above 30 kGy, although it is constant below 30 kGy. From our analysis of the ID-VGS characteristics along with micro-Raman spectroscopy, the gamma-ray irradiation does not change the structure of the CNT network channel for total doses up to 50 kGy; it instead generates charge traps near the CNT/SiO2 gate insulator interfaces. These traps are located within the SiO2 layer and/or the adsorbate on the device surface. The positively charged traps near the CNT/SiO2 interface contribute less to the Vth shift than the interface dipoles at the CNT/metal electrode interfaces and the segment of the CNT network channel below doses of 30 kGy, while the contribution of the charge traps increases for total doses above 30 kGy. Our findings indicate the possibility of the application of CNT-network transistors as radiation detectors suitable for use in air for radiation doses above 30 kGy.

  16. Random networks of carbon nanotubes optimized for transistor mass-production: searching for ultimate performance

    NASA Astrophysics Data System (ADS)

    Žeželj, M.; Stanković, I.

    2016-10-01

    Random networks of as-grown single-walled carbon nanotubes (CNTs) contain both metallic (m-CNTs) and semiconducting (s-CNTs) nanotubes in an approximate ratio of 1:2, which leads to a trade-off between on-conductance and the on/off ratio. We demonstrate how this design problem can be solved with a realistic numerical approach. We determine the CNT density, length, and channel dimensions under which CNT thin-film transistors simultaneously attain on-conductance higher than 1 μS and an on/off ratio higher than 104. The fact that asymmetric systems have more pronounced finite-size scaling behavior than symmetric systems allows us additional design freedom. A realization probability of the desired characteristics higher than 99% is obtained for the channels with aspect ratio {L}{{CH}}/{W}{{CH}}\\lt 1.2 and normalized size {L}{{CH}}{W}{{CH}}/{l}{{CNT}}2\\gt 250 when the CNT length is {l}{{CNT}}=4-20 μ {{m}} and the normalized density of CNTs is close to the value where the probability of percolation through only s-CNT pathways reaches its maximum.

  17. Rigid/flexible transparent electronics based on separated carbon nanotube thin-film transistors and their application in display electronics.

    PubMed

    Zhang, Jialu; Wang, Chuan; Zhou, Chongwu

    2012-08-28

    Transparent electronics has attracted numerous research efforts in recent years because of its promising commercial impact in a wide variety of areas such as transparent displays. High optical transparency as well as good electrical performance is required for transparent electronics. Preseparated, semiconducting enriched carbon nanotubes are excellent candidates for this purpose due to their excellent mobility, high percentage of semiconducting nanotubes, and room-temperature processing compatibility. Here we report fully transparent transistors based on separated carbon nanotube networks. Using a very thin metal layer together with indium tin oxide as source and drain contacts, excellent electrical performance as well as high transparency (~82%) has been achieved (350-800 nm). Also, devices on flexible substrates are fabricated, and only a very small variation in electric characteristics is observed during a flexibility test. Furthermore, an organic light-emitting diode control circuit with significant output light intensity modulation has been demonstrated with transparent, separated nanotube thin-film transistors. Our results suggest the promising future of separated carbon nanotube based transparent electronics, which can serve as the critical foundation for next-generation transparent display applications.

  18. Disposable immunosensors for C-reactive protein based on carbon nanotubes field effect transistors.

    PubMed

    Justino, Celine I L; Freitas, Ana C; Amaral, José P; Rocha-Santos, Teresa A P; Cardoso, Susana; Duarte, Armando C

    2013-04-15

    Label-free immunosensors based on single-walled carbon nanotubes field effect transistor (NTFET) devices were developed for the detection of C-reactive protein (CRP) which is currently the best validated inflammatory biomarker associated with cardiovascular diseases. The immunoreaction principle consists in the direct adsorption of CRP specific antibodies (anti-CRP) to single-walled carbon nanotubes (SWCNTs) networks. Such anti-CRP are the molecular receptors of CRP antigens which, in turn, can be detected by the developed NTFET devices in a linear dynamic range of 10(-4)-10(2) μg/mL. Thus, typical values of CRP (in blood serum) for healthy persons (<1 μg/mL), and higher levels (>5 μg/mL) corresponding to pathological states, can be both detected with the NTFET immunosensors, becoming an advantageous alternative as the basis for the development of analytical instrumentation for assessment of risk of occurrence of cardiovascular diseases. A log-log linear regression was applied to the experimental data with a correlation coefficient of r=0.9962 (p<0.001), and there is no statistical difference (from ANOVA) between individual NTFET devices (p=0.9582), demonstrating acceptable reproducibility. According to the experimental results, the estimate of detection limit (LOD, 10(-4)μg/mL) is 3-fold lower than that of some conventional immunoassay techniques for blood serum (e.g., LOD of 0.2 μg/mL for high-sensitivity enzyme-linked immunosorbent assay), and the dynamic range (10(-4)-10(2)μg/mL) is about 6-fold higher. Furthermore, this simple and low-cost methodology allows the use of sample volumes as low as 1 μL for the label-free detection of CRP.

  19. Printed thin film transistors and CMOS inverters based on semiconducting carbon nanotube ink purified by a nonlinear conjugated copolymer.

    PubMed

    Xu, Wenya; Dou, Junyan; Zhao, Jianwen; Tan, Hongwei; Ye, Jun; Tange, Masayoshi; Gao, Wei; Xu, Weiwei; Zhang, Xiang; Guo, Wenrui; Ma, Changqi; Okazaki, Toshiya; Zhang, Kai; Cui, Zheng

    2016-02-28

    Two innovative research studies are reported in this paper. One is the sorting of semiconducting carbon nanotubes and ink formulation by a novel semiconductor copolymer and second is the development of CMOS inverters using not the p-type and n-type transistors but a printed p-type transistor and a printed ambipolar transistor. A new semiconducting copolymer (named P-DPPb5T) was designed and synthesized with a special nonlinear structure and more condensed conjugation surfaces, which can separate large diameter semiconducting single-walled carbon nanotubes (sc-SWCNTs) from arc discharge SWCNTs according to their chiralities with high selectivity. With the sorted sc-SWCNTs ink, thin film transistors (TFTs) have been fabricated by aerosol jet printing. The TFTs displayed good uniformity, low operating voltage (±2 V) and subthreshold swing (SS) (122-161 mV dec(-1)), high effective mobility (up to 17.6-37.7 cm(2) V(-1) s(-1)) and high on/off ratio (10(4)-10(7)). With the printed TFTs, a CMOS inverter was constructed, which is based on the p-type TFT and ambipolar TFT instead of the conventional p-type and n-type TFTs. Compared with other recently reported inverters fabricated by printing, the printed CMOS inverters demonstrated a better noise margin (74% 1/2 Vdd) and was hysteresis free. The inverter has a voltage gain of up to 16 at an applied voltage of only 1 V and low static power consumption.

  20. Wafer scale fabrication of carbon nanotube thin film transistors with high yield

    NASA Astrophysics Data System (ADS)

    Tian, Boyuan; Liang, Xuelei; Yan, Qiuping; Zhang, Han; Xia, Jiye; Dong, Guodong; Peng, Lianmao; Xie, Sishen

    2016-07-01

    Carbon nanotube thin film transistors (CNT-TFTs) are promising candidates for future high performance and low cost macro-electronics. However, most of the reported CNT-TFTs are fabricated in small quantities on a relatively small size substrate. The yield of large scale fabrication and the performance uniformity of devices on large size substrates should be improved before the CNT-TFTs reach real products. In this paper, 25 200 devices, with various geometries (channel width and channel length), were fabricated on 4-in. size ridged and flexible substrates. Almost 100% device yield were obtained on a rigid substrate with high out-put current (>8 μA/μm), high on/off current ratio (>105), and high mobility (>30 cm2/V.s). More importantly, uniform performance in 4-in. area was achieved, and the fabrication process can be scaled up. The results give us more confidence for the real application of the CNT-TFT technology in the near future.

  1. Carbon nanotube field effect transistors for the fast and selective detection of human immunoglobulin G.

    PubMed

    Cid, Cristina C; Riu, Jordi; Maroto, Alicia; Rius, F Xavier

    2008-08-01

    We report a field effect transistor (FET) based on a network of single-walled carbon nanotubes (SWCNTs) which can selectively detect human immunoglobulin G (HIgG). HIgG antibodies, which are strongly adsorbed onto the walls of the SWCNTs, are the basic elements of the recognition layer. The non-specific binding of proteins and the effects of other interferences are avoided by covering the non-adsorbed areas of the SWCNTs with Tween 20. The selectivity of the sensor has been tested against bovine serum albumin (BSA), the most abundant protein in plasma. HIgG in aqueous solution with concentrations from 1.25 mg L(-1) (8 nM) can be readily detected with response times of about 10 min. The SWCNT networks that form the basis of the sensor are easily grown by chemical vapour deposition. Silver screen-printed electrodes make the sensor quick to build. The sensitivity obtained with this sensor is similar to other FET devices based on SWCNTs built using much more complicated lithography processes. Moreover, the sensor is a reagentless device that does not need labels to detect HIgG.

  2. High performance dendrimer functionalized single-walled carbon nanotubes field effect transistor biosensor for protein detection

    NASA Astrophysics Data System (ADS)

    Rajesh, Sharma, Vikash; Puri, Nitin K.; Mulchandani, Ashok; Kotnala, Ravinder K.

    2016-12-01

    We report a single-walled carbon nanotube (SWNT) field-effect transistor (FET) functionalized with Polyamidoamine (PAMAM) dendrimer with 128 carboxyl groups as anchors for site specific biomolecular immobilization of protein antibody for C-reactive protein (CRP) detection. The FET device was characterized by scanning electron microscopy and current-gate voltage (I-Vg) characteristic studies. A concentration-dependent decrease in the source-drain current was observed in the regime of clinical significance, with a detection limit of ˜85 pM and a high sensitivity of 20% change in current (ΔI/I) per decade CRP concentration, showing SWNT being locally gated by the binding of CRP to antibody (anti-CRP) on the FET device. The low value of the dissociation constant (Kd = 0.31 ± 0.13 μg ml-1) indicated a high affinity of the device towards CRP analyte arising due to high anti-CRP loading with a better probe orientation on the 3-dimensional PAMAM structure.

  3. Advantages of flattened electrode in bottom contact single-walled carbon nanotube field-effect transistor

    SciTech Connect

    Setiadi, Agung; Akai-Kasaya, Megumi Saito, Akira; Kuwahara, Yuji

    2014-09-01

    We fabricated single-walled carbon nanotube (SWNT) field-effect transistor (FET) devices on flattened electrodes, in which there are no height difference between metal electrodes and the substrate. SWNT-FET fabricated using bottom contact technique have some advantages, such that the SWNTs are free from electron irradiation, have direct contact with the desired metal electrodes, and can be functionalized before or after deposition. However, the SWNTs can be bent at the contact point with the metal electrodes leading to a different electrical characteristic of the devices. The number of SWNT direct junctions in short channel length devices is drastically increased by the use of flattened electrodes due to strong attractive interaction between SWNT and the substrate. The flattened electrodes show a better balance between their hole and electron mobility compared to that of the non-flattened electrodes, that is, ambipolar FET characteristic. It is considered that bending of the SWNTs in the non-flattened electrode devices results in a higher Schottky barrier for the electrons.

  4. Fabrication and characterization of junctionless carbon nanotube field effect transistor for cholesterol detection

    NASA Astrophysics Data System (ADS)

    Barik, Md. Abdul; Dutta, Jiten Ch.

    2014-08-01

    We have reported fabrication and characterization of polyaniline (PANI)/zinc oxide (ZnO) membrane-based junctionless carbon nanotube field effect transistor deposited on indium tin oxide glass plate for the detection of cholesterol (0.5-22.2 mM). Cholesterol oxidase (ChOx) has been immobilized on the PANI/ZnO membrane by physical adsorption technique. Electrical response has been recorded using digital multimeter (Agilent 3458A) in the presence of phosphate buffer saline of 50 mM, pH 7.0, and 0.9% NaCl contained in a glass pot. The results of response studies for cholesterol reveal linearity as 0.5-16.6 mM and improved sensitivity of 60 mV/decade in good agreement with Nernstian limit ˜59.2 mV/decade. The life time of this sensor has been found up to 5 months and response time of 1 s. The limit of detection with regression coefficient (r) ˜ 0.998 and Michaelis-Menten constant (Km) were found to be ˜0.25 and 1.4 mM, respectively, indicating high affinity of ChOx to cholesterol. The results obtained in this work show negligible interference with glucose and urea.

  5. Fabrication and characterization of junctionless carbon nanotube field effect transistor for cholesterol detection

    SciTech Connect

    Barik, Md. Abdul Dutta, Jiten Ch.

    2014-08-04

    We have reported fabrication and characterization of polyaniline (PANI)/zinc oxide (ZnO) membrane-based junctionless carbon nanotube field effect transistor deposited on indium tin oxide glass plate for the detection of cholesterol (0.5–22.2 mM). Cholesterol oxidase (ChOx) has been immobilized on the PANI/ZnO membrane by physical adsorption technique. Electrical response has been recorded using digital multimeter (Agilent 3458A) in the presence of phosphate buffer saline of 50 mM, pH 7.0, and 0.9% NaCl contained in a glass pot. The results of response studies for cholesterol reveal linearity as 0.5–16.6 mM and improved sensitivity of 60 mV/decade in good agreement with Nernstian limit ∼59.2 mV/decade. The life time of this sensor has been found up to 5 months and response time of 1 s. The limit of detection with regression coefficient (r) ∼ 0.998 and Michaelis-Menten constant (K{sub m}) were found to be ∼0.25 and 1.4 mM, respectively, indicating high affinity of ChOx to cholesterol. The results obtained in this work show negligible interference with glucose and urea.

  6. Carbon nanotube thin film transistors fabricated by an etching based manufacturing compatible process.

    PubMed

    Tian, Boyuan; Liang, Xuelei; Xia, Jiye; Zhang, Han; Dong, Guodong; Huang, Qi; Peng, Lianmao; Xie, Sishen

    2017-03-17

    Carbon nanotube thin film transistors (CNT-TFTs) have been regarded as strong competitors to currently commercialized TFT technologies. Though much progress has been achieved recently, CNT-TFT research is still in the stage of laboratory research. One critical challenge for commercializing CNT-TFT technology is that the commonly used device fabrication method is a lift-off based process, which is not suitable for mass production. In this paper, we report an etching based fabrication process for CNT-TFTs, which is fully manufacturing compatible. In our process, the CNT thin film channel was patterned by dry etching, while wet etching was used for patterning the layers of metal and insulator. The CNT-TFTs were successfully fabricated on a 4 inch wafer in both top-gate and buried-gate geometries with low Schottky barrier contact and pretty uniform performance. High output current (>1.2 μA μm(-1)), high on/off current ratio (>10(5)) and high mobility (>30 cm(2) V(-1) s(-1)) were obtained. Though the fabrication process still needs to be optimized, we believe our research on the etching fabrication process pushes CNT-TFT technology a step forward towards real applications in the near future.

  7. Solution-processed zinc oxide nanoparticles/single-walled carbon nanotubes hybrid thin-film transistors

    NASA Astrophysics Data System (ADS)

    Liu, Fangmei; Sun, Jia; Qian, Chuan; Hu, Xiaotao; Wu, Han; Huang, Yulan; Yang, Junliang

    2016-09-01

    Solution-processed thin-film transistors (TFTs) are the essential building blocks for manufacturing the low-cost and large-area consumptive electronics. Herein, solution-processed TFTs based on the composites of zinc oxide (ZnO) nanoparticles and single-walled carbon nanotubes (SWCNTs) were fabricated by the methods of spin-coating and doctor-blading. Through controlling the weight of SWCNTs, the ZnO/SWCNTs TFTs fabricated by spin-coating demonstrated a field-effect mobility of 4.7 cm2/Vs and a low threshold voltage of 0.8 V, while the TFTs devices fabricated by doctor-blading technique showed reasonable electrical performance with a mobility of 0.22 cm2/Vs. Furthermore, the ion-gel was used as an efficient electrochemical gate dielectric because of its large electric double-layer capacitance. The operating voltage of all the TFTs devices is as low as 4.0 V. The research suggests that ZnO/SWCNTs TFTs have the potential applications in low-cost, large-area and flexible consumptive electronics, such as chemical-biological sensors and smart label.

  8. Strain effects on the performance of zero-Schottky-barrier double-walled carbon nanotube transistors

    NASA Astrophysics Data System (ADS)

    Wahab, Md. Abdul; Khosru, Quazi D. M.

    2010-08-01

    Schrodinger's equation is solved using recursive Green's function algorithm self-consistently with Poisson's equation to study the transport physics of uniaxial and torsional strained double-walled (DW) carbon nanotube (CNT) field-effect transistors (FETs) and to analyze their performance. The characteristics and performance of proposed DW CNTFET are compared with existing single-walled (SW) CNTFET. The strain has great impact on the I-V characteristics of both SW and DW CNT devices. Tensile and torsional strains improve greatly the off-state current and on/off current ratio of both devices. Compressive strain improves on-state current, but this improvement is comparatively small. The effect of strain on off-state current, on-state current, and on/off current ratio is higher in SW CNTFET. The inverse subthreshold slope of DW CNTFET is better than SW CNTFET. But the variation in inverse subthreshold slope with strain is smaller in DW CNTFET. Unlike SW CNTFET the on-state transconductance of DW CNTFET improves with tensile and torsional strains, and degrades with compressive strain. The on-state cut-off frequency of DW CNTFET also shows opposite behavior to SW CNTFET with strain following on-state transconductance. Concrete Physical description is provided to explain all above changes with strain.

  9. Modeling of Gate Bias Modulation in Carbon Nanotube Field-Effect-Transistors

    NASA Technical Reports Server (NTRS)

    Yamada, Toshishige; Biegel, Bryan (Technical Monitor)

    2002-01-01

    The threshold voltages of a carbon nanotube (CNT) field-effect transistor (FET) are derived and compared with those of the metal oxide-semiconductor (MOS) FETs. The CNT channel is so thin that there is no voltage drop perpendicular to the gate electrode plane, which is the CNT diameter direction, and this makes the CNTFET characteristics quite different from those in MOSFETs. The relation between the voltage and the electrochemical potentials, and the mass action law for electrons and holes are examined in the context of CNTs, and it is shown that the familiar relations are still valid because of the macroscopic number of states available in the CNTs. This is in sharp contrast to the cases of quantum dots. Using these relations, we derive an inversion threshold voltage V(sub Ti) and an accumulation threshold voltage V(sub Ta) as a function of the Fermi level E(sub F) in the channel, where E(sub F) is a measure of channel doping. V(sub Ti) of the CNTFETs has a much stronger dependence than that of MOSFETs, while V(sub Ta)s of both CNTFETs and MOSFETs depend quite weakly on E(sub F) with the same functional form. This means the transition from normally-off mode to normally-on mode is much sharper in CNTFETs as the doping increases, and this property has to be taken into account in circuit design.

  10. Novel carbon nanotube field effect transistor with graded double halo channel

    NASA Astrophysics Data System (ADS)

    Naderi, Ali; Keshavarzi, Parviz

    2012-05-01

    A novel carbon nanotube field effect transistor with symmetric graded double halo channel (GDH-CNTFET) is presented for suppressing band to band tunneling and improving the device performance. GDH structure includes two symmetric graded haloes which are broadened throughout the channel. The doping concentration of GDH channel is at maximum level at drain/source side and is reduced gradually toward zero at the middle of channel. The doping distribution at source side of channel reduces the drain induced barrier lowering (DIBL) and the drain side suppresses the band to band tunneling effect. In addition, broadening the doping throughout the channel increases the recombination of electrons and holes and acts as an additional factor for improving the band to band tunneling. Simulation results show that applying this structure on CNTFET enhances the device performance. In comparison with double halo structure with equal saturation current, the proposed GDH structure shows better characteristics and short channel parameters. Furthermore, the delay and power delay product (PDP) analysis versus on/off current ratio shows the efficiency of the proposed GDH structure.

  11. Compact model for ballistic MOSFET-like carbon nanotube field-effect transistors

    NASA Astrophysics Data System (ADS)

    Abdolkader, Tarek M.; Fikry, Wael

    2016-01-01

    In this work, a compact model for MOSFET-like ballistic carbon nanotube field-effect transistors (CNFETs) is presented. The model is based on calculating the charge and surface potential on the top of the barrier between source and drain using closed-form analytical formulae. The formula for the surface potential is obtained by merging two simplified expressions obtained in two extreme cases (very low and very high gate bias). Two fitting parameters are introduced whose values are extracted by best fitting model results with numerically calculated ones. The model has a continuous derivative and thus it is SPICE-compatible. Accuracy of the model is compared to previous analytical model presented in the literature with numerical results taken as a reference. Proposed model proves to give less relative error over a wide range of gate biases, and for a drain bias up to 0.5 V. In addition, the model enables the calculation of quantum and gate capacitance analytically reproducing the negative capacitance behaviour known in CNFETs.

  12. Strain on field effect transistors with single–walled–carbon nanotube network on flexible substrate

    SciTech Connect

    Kim, T. G.; Kim, U. J.; Lee, E. H.; Hwang, J. S.; Hwang, S. W. E-mail: sangsig@korea.ac.kr; Kim, S. E-mail: sangsig@korea.ac.kr

    2013-12-07

    We have systematically analyzed the effect of strain on the electrical properties of flexible field effect transistors with a single-walled carbon nanotube (SWCNT) network on a polyethersulfone substrate. The strain was applied and estimated at the microscopic scale (<1 μm) by using scanning electron microscope (SEM) equipped with indigenously designed special bending jig. Interestingly, the strain estimated at the microscopic scale was found to be significantly different from the strain calculated at the macroscopic scale (centimeter-scale), by a factor of up to 4. Further in-depth analysis using SEM indicated that the significant difference in strain, obtained from two different measurement scales (microscale and macroscale), could be attributed to the formation of cracks and tears in the SWCNT network, or at the junction of SWCNT network and electrode during the strain process. Due to this irreversible morphological change, the electrical properties, such as on current level and field effect mobility, lowered by 14.3% and 4.6%, respectively.

  13. Harmonic and Intermodulation Performance of Metallic Carbon Nanotube (MCNT) and Complementary Carbon Nantube Field Effect Transistor (CNTFET) Amplifier

    NASA Astrophysics Data System (ADS)

    Abuelma'Atti, Muhammad Taher

    2009-05-01

    This paper presents a simple mathematical model for the output-voltage (current)/ input-voltage characteristic of the carbon nanotube field effect transistor (CNTFET) complementary inverting amplifier and the metallic carbon nanotube (MCNT) interconnect. The model, basically a Fourier series, yields closed-form expressions for the amplitudes of the harmonic and intermodulation components of the output voltage (current) resulting from a multisinusoidal input voltage. The special case of a two-tone equal-amplitude input voltage is considered in detail. The results show that the harmonic and intermodulation performance of the complementary CNTFET-based inverting amplifier and the MCNT interconnect is strongly dependent on the values of the amplitudes of the input tones with the third-order intermodulation component dominating over a wide range of the input voltage amplitudes. The results also show that while the harmonics may exhibit minima, the intermodulation products are almost monotonically increasing with the increase in the input voltage amplitude and exhibit no minima.

  14. Detection of the Odor Signature of Ovarian Cancer using DNA-Decorated Carbon Nanotube Field Effect Transistor Arrays

    NASA Astrophysics Data System (ADS)

    Kehayias, Christopher; Kybert, Nicholas; Yodh, Jeremy; Johnson, A. T. Charlie

    Carbon nanotubes are low-dimensional materials that exhibit remarkable chemical and bio-sensing properties and have excellent compatibility with electronic systems. Here, we present a study that uses an electronic olfaction system based on a large array of DNA-carbon nanotube field effect transistors vapor sensors to analyze the VOCs of blood plasma samples collected from patients with malignant ovarian cancer, patients with benign ovarian lesions, and age-matched healthy subjects. Initial investigations involved coating each CNT sensor with single-stranded DNA of a particular base sequence. 10 distinct DNA oligomers were used to functionalize the carbon nanotube field effect transistors, providing a 10-dimensional sensor array output response. Upon performing a statistical analysis of the 10-dimensional sensor array responses, we showed that blood samples from patients with malignant cancer can be reliably differentiated from those of healthy control subjects with a p-value of 3 x 10-5. The results provide preliminary evidence that the blood of ovarian cancer patients contains a discernable volatile chemical signature that can be detected using DNA-CNT nanoelectronic vapor sensors, a first step towards a minimally invasive electronic diagnostic technology for ovarian cancer.

  15. Simulation of diode characteristics of carbon nanotube field-effect transistors with symmetric source and drain contacts

    NASA Astrophysics Data System (ADS)

    Li, Jingqi; Zhang, Xixiang

    2011-09-01

    The diode characteristics of carbon nanotube field-effect transistors (CNTFETs) with symmetric source and drain contacts have been experimentally found at zero gate voltage (Li J. et al., Appl. Phys. Lett., 92 (2008) 133111). We calculate this characteristic using a semiclassical method based on Schottky barrier transistor mechanism. The influences of metal work function, the diameter of the carbon nanotubes and the dielectric thickness on the rectification behavior have been studied. The calculation results show that the metal with a higher work function results in a better diode characteristics for a p-type CNTFET. For single-walled carbon nanotubes (SWNTs) with different band gaps, both forward current and reverse current increase with decreasing band gap, but the ratio of forward current to reverse current decreases with decreasing band gap. This result is well consistent with the experimental observations reported previously. The simulation of the dielectric thickness effect indicates that the thinner the dielectric layer, the better the rectification behavior. The CNTFETs without a bottom gate could not show the diode characteristics, which is consistent with the reported experimental observation.

  16. Carbon nanotubes based transistors composed of single-walled carbon nanotubes mats as gas sensors: A review

    NASA Astrophysics Data System (ADS)

    Bondavalli, Paolo

    2010-06-01

    This contribution presents the main studies on the CNTFET based gas sensors obtained using Single-Walled Carbon Nanotubes mats (SWCNTs) as channel. Although these devices have allowed one to achieve sensors with an impressive sensitivity compared to existing technologies, the physical interpretation of the effect of interaction between the gas molecules and the CNTFETs has not yet been clarified. Concerning selectivity, we will deal with the main routes that have been proposed to overcome this problem: functionalization using polymers, electrodes metal diversification, metal decoration of SWCNT mats.

  17. Electrical Detection of Negatively Charged Proteins Using n-Type Carbon Nanotube Field-Effect Transistor Biosensors

    NASA Astrophysics Data System (ADS)

    Yamamoto, Yasuki; Maehashi, Kenzo; Ohno, Yasuhide; Matsumoto, Kazuhiko

    2010-02-01

    We fabricated n-type carbon nanotube field-effect transistor (CNTFET) biosensors. To prevent the single-wall carbon nanotube (SWNT)/metal contacts from adsorption of ambient molecules, SiNx passivation films were deposited on CNTFETs by catalytic chemical vapor deposition. CNTFETs with SiNx passivation films on SWNT/metal contacts, but SWNT channels are exposed to environment for sensing, exhibit n-type behavior both in air and solution. Negatively charged bovine serum albumin is successfully detected using the fabricated n-type CNTFET biosensors with SiNx passivation films. Electrical detections of both negatively and positively charged proteins are achieved using n- and p-type CNTFET biosensors, respectively.

  18. Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs.

    PubMed

    Brady, Gerald J; Way, Austin J; Safron, Nathaniel S; Evensen, Harold T; Gopalan, Padma; Arnold, Michael S

    2016-09-01

    Carbon nanotubes (CNTs) are tantalizing candidates for semiconductor electronics because of their exceptional charge transport properties and one-dimensional electrostatics. Ballistic transport approaching the quantum conductance limit of 2G 0 = 4e (2)/h has been achieved in field-effect transistors (FETs) containing one CNT. However, constraints in CNT sorting, processing, alignment, and contacts give rise to nonidealities when CNTs are implemented in densely packed parallel arrays such as those needed for technology, resulting in a conductance per CNT far from 2G 0. The consequence has been that, whereas CNTs are ultimately expected to yield FETs that are more conductive than conventional semiconductors, CNTs, instead, have underperformed channel materials, such as Si, by sixfold or more. We report quasi-ballistic CNT array FETs at a density of 47 CNTs μm(-1), fabricated through a combination of CNT purification, solution-based assembly, and CNT treatment. The conductance is as high as 0.46 G 0 per CNT. In parallel, the conductance of the arrays reaches 1.7 mS μm(-1), which is seven times higher than the previous state-of-the-art CNT array FETs made by other methods. The saturated on-state current density is as high as 900 μA μm(-1) and is similar to or exceeds that of Si FETs when compared at and equivalent gate oxide thickness and at the same off-state current density. The on-state current density exceeds that of GaAs FETs as well. This breakthrough in CNT array performance is a critical advance toward the exploitation of CNTs in logic, high-speed communications, and other semiconductor electronics technologies.

  19. Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs

    PubMed Central

    Brady, Gerald J.; Way, Austin J.; Safron, Nathaniel S.; Evensen, Harold T.; Gopalan, Padma; Arnold, Michael S.

    2016-01-01

    Carbon nanotubes (CNTs) are tantalizing candidates for semiconductor electronics because of their exceptional charge transport properties and one-dimensional electrostatics. Ballistic transport approaching the quantum conductance limit of 2G0 = 4e2/h has been achieved in field-effect transistors (FETs) containing one CNT. However, constraints in CNT sorting, processing, alignment, and contacts give rise to nonidealities when CNTs are implemented in densely packed parallel arrays such as those needed for technology, resulting in a conductance per CNT far from 2G0. The consequence has been that, whereas CNTs are ultimately expected to yield FETs that are more conductive than conventional semiconductors, CNTs, instead, have underperformed channel materials, such as Si, by sixfold or more. We report quasi-ballistic CNT array FETs at a density of 47 CNTs μm−1, fabricated through a combination of CNT purification, solution-based assembly, and CNT treatment. The conductance is as high as 0.46 G0 per CNT. In parallel, the conductance of the arrays reaches 1.7 mS μm−1, which is seven times higher than the previous state-of-the-art CNT array FETs made by other methods. The saturated on-state current density is as high as 900 μA μm−1 and is similar to or exceeds that of Si FETs when compared at and equivalent gate oxide thickness and at the same off-state current density. The on-state current density exceeds that of GaAs FETs as well. This breakthrough in CNT array performance is a critical advance toward the exploitation of CNTs in logic, high-speed communications, and other semiconductor electronics technologies. PMID:27617293

  20. Investigation of Schottky-Barrier carbon nanotube field-effect transistor by an efficient semi-classical numerical modeling

    NASA Astrophysics Data System (ADS)

    Chen, Changxin; Zhang, Wei; Zhao, Bo; Zhang, Yafei

    2009-12-01

    An efficient semi-classical numerical modeling approach has been developed to simulate the coaxial Schottky-barrier carbon nanotube field-effect transistor (SB-CNTFET). In the modeling, the electrostatic potential of the CNT is obtained by self-consistently solving the analytic expression of CNT carrier distribution and the cylindrical Poisson equation, which significantly enhances the computational efficiency and simultaneously present a result in good agreement to that obtained from the non-equilibrium Green's function (NEGF) formalism based on the first principle. With this method, the effects of the CNT diameter, power supply voltage, thickness and dielectric constant of gate insulator on the device performance are investigated.

  1. Printed thin film transistors and CMOS inverters based on semiconducting carbon nanotube ink purified by a nonlinear conjugated copolymer

    NASA Astrophysics Data System (ADS)

    Xu, Wenya; Dou, Junyan; Zhao, Jianwen; Tan, Hongwei; Ye, Jun; Tange, Masayoshi; Gao, Wei; Xu, Weiwei; Zhang, Xiang; Guo, Wenrui; Ma, Changqi; Okazaki, Toshiya; Zhang, Kai; Cui, Zheng

    2016-02-01

    Two innovative research studies are reported in this paper. One is the sorting of semiconducting carbon nanotubes and ink formulation by a novel semiconductor copolymer and second is the development of CMOS inverters using not the p-type and n-type transistors but a printed p-type transistor and a printed ambipolar transistor. A new semiconducting copolymer (named P-DPPb5T) was designed and synthesized with a special nonlinear structure and more condensed conjugation surfaces, which can separate large diameter semiconducting single-walled carbon nanotubes (sc-SWCNTs) from arc discharge SWCNTs according to their chiralities with high selectivity. With the sorted sc-SWCNTs ink, thin film transistors (TFTs) have been fabricated by aerosol jet printing. The TFTs displayed good uniformity, low operating voltage (+/-2 V) and subthreshold swing (SS) (122-161 mV dec-1), high effective mobility (up to 17.6-37.7 cm2 V-1 s-1) and high on/off ratio (104-107). With the printed TFTs, a CMOS inverter was constructed, which is based on the p-type TFT and ambipolar TFT instead of the conventional p-type and n-type TFTs. Compared with other recently reported inverters fabricated by printing, the printed CMOS inverters demonstrated a better noise margin (74% 1/2 Vdd) and was hysteresis free. The inverter has a voltage gain of up to 16 at an applied voltage of only 1 V and low static power consumption.Two innovative research studies are reported in this paper. One is the sorting of semiconducting carbon nanotubes and ink formulation by a novel semiconductor copolymer and second is the development of CMOS inverters using not the p-type and n-type transistors but a printed p-type transistor and a printed ambipolar transistor. A new semiconducting copolymer (named P-DPPb5T) was designed and synthesized with a special nonlinear structure and more condensed conjugation surfaces, which can separate large diameter semiconducting single-walled carbon nanotubes (sc-SWCNTs) from arc discharge

  2. a Computational Study of Strain Effects in the Band-To Carbon Nanotube Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Yousefi, Reza; Ghoreishi, Seyyed Saleh

    2012-11-01

    In this paper, the transport properties of the band-to-band-tunneling carbon nanotube field-effect transistors (BTBT-CNTFETs) under uniaxial strain are studied, with the nonequilibrium Green's function (NEGF) formalism. The effects of the uniaxial strain on the electrical properties, such as the ON current (ION), OFF current (IOFF), ION/IOFF ratio, subthreshold swing and intrinsic delay are evaluated. It was observed that the uniaxial strain has strong effects on the transport properties of these transistors. The results show that appropriate uniaxial strain, although degrades the ON current and the intrinsic delay, it also decreases the power consumption of the BTBT-CNTFETs and as a result can be used for low-power applications.

  3. High-performance carbon-nanotube-based complementary field-effect-transistors and integrated circuits with yttrium oxide

    SciTech Connect

    Liang, Shibo; Zhang, Zhiyong Si, Jia; Zhong, Donglai; Peng, Lian-Mao

    2014-08-11

    High-performance p-type carbon nanotube (CNT) transistors utilizing yttrium oxide as gate dielectric are presented by optimizing oxidization and annealing processes. Complementary metal-oxide-semiconductor (CMOS) field-effect-transistors (FETs) are then fabricated on CNTs, and the p- and n-type devices exhibit symmetrical high performances, especially with low threshold voltage near to zero. The corresponding CMOS CNT inverter is demonstrated to operate at an ultra-low supply voltage down to 0.2 V, while displaying sufficient voltage gain, high noise margin, and low power consumption. Yttrium oxide is proven to be a competitive gate dielectric for constructing high-performance CNT CMOS FETs and integrated circuits.

  4. A facile and low-cost length sorting of single-wall carbon nanotubes by precipitation and applications for thin-film transistors.

    PubMed

    Gui, Hui; Chen, Haitian; Khripin, Constantine Y; Liu, Bilu; Fagan, Jeffrey A; Zhou, Chongwu; Zheng, Ming

    2016-02-14

    Semiconducting single-wall carbon nanotubes (SWCNTs) with long lengths are highly desirable for many applications such as thin-film transistors and circuits. Previously reported length sorting techniques usually require sophisticated instrumentation and are hard to scale up. In this paper, we report for the first time a general phenomenon of a length-dependent precipitation of surfactant-dispersed carbon nanotubes by polymers, salts, and their combinations. Polyelectrolytes such as polymethacrylate (PMAA) and polystyrene sulfonate (PSS) are found to be especially effective on cholate and deoxycholate dispersed SWCNTs. By adding PMAA to these nanotube dispersions in a stepwise fashion, we have achieved nanotube precipitation in a length-dependent order: first nanotubes with an average length of 650 nm, and then successively of 450 nm, 350 nm, and 250 nm. A similar effect of nanotube length sorting has also been observed for PSS. To demonstrate the utility of the length fractionation, the 650 nm-long nanotube fraction was subjected to an aqueous two-phase separation to obtain semiconducting enriched nanotubes. Thin-film transistors fabricated with the resulting semiconducting SWCNTs showed a carrier mobility up to 18 cm(2) (V s)(-1) and an on/off ratio up to 10(7). Our result sheds new light on the phase behavior of aqueous nanotube dispersions under high concentrations of polymers and salts, and offers a facile, low-cost, and scalable method to produce length sorted semiconducting nanotubes for macroelectronics applications.

  5. High performance nanocomposite thin film transistors with bilayer carbon nanotube-polythiophene active channel by ink-jet printing

    NASA Astrophysics Data System (ADS)

    Hsieh, Gen-Wen; Li, Flora M.; Beecher, Paul; Nathan, Arokia; Wu, Yiliang; Ong, Beng S.; Milne, William I.

    2009-12-01

    Nanocomposite thin film transistors (TFTs) based on nonpercolating networks of single-walled carbon nanotubes (CNTs) and polythiophene semiconductor [poly[5,5'-bis(3-dodecyl-2-thienyl)-2,2'-bithiophene] (PQT-12)] thin film hosts are demonstrated by ink-jet printing. A systematic study on the effect of CNT loading on the transistor performance and channel morphology is conducted. With an appropriate loading of CNTs into the active channel, ink-jet printed composite transistors show an effective hole mobility of 0.23 cm2 V-1 s-1, which is an enhancement of more than a factor of 7 over ink-jet printed pristine PQT-12 TFTs. In addition, these devices display reasonable on/off current ratio of 105-106, low off currents of the order of 10 pA, and a sharp subthreshold slope (<0.8 V dec-1). The work presented here furthers our understanding of the interaction between polythiophene polymers and nonpercolating CNTs, where the CNT density in the bilayer structure substantially influences the morphology and transistor performance of polythiophene. Therefore, optimized loading of ink-jet printed CNTs is crucial to achieve device performance enhancement. High performance ink-jet printed nanocomposite TFTs can present a promising alternative to organic TFTs in printed electronic applications, including displays, sensors, radio-frequency identification (RFID) tags, and disposable electronics.

  6. The Nano-Memory Devices of a Single Wall and Peapod Structural Carbon Nanotube Field Effect Transistor

    NASA Astrophysics Data System (ADS)

    Lee, C. H.; Kang, K. T.; Park, K. S.; Kim, M. S.; Kim, H. S.; Kim, H. G.; Fischer, J. E.; Johnson, A. T.

    2003-08-01

    The rediscovery and the memory application of single walled carbon nanotubes (SWNTs) give a new method in nanoelectronics applications. At first we will report the memory effects of a SWNT, and attempt to use this property in a memory device. To use a SWNT field effect transistor (FET) as a charge-storage memory device, the device operates by injecting electrons from the nanotube channel of a TubeFET into charge traps on the surface of the SiO2 gate dielectric, thus shifting the threshold voltage. This memory can be written and erased many times, and has a hold time of hundreds of seconds at room temperature. At second we have attempted to make a Peapod tubeFET. It is the structure that a C60 was contained within the tube and separated from it by a graphitic Van der Waals gap. I-V property of the Peapod shows semiconducting property.

  7. Length separation of single-walled carbon nanotubes and its impact on structural and electrical properties of wafer-level fabricated carbon nanotube-field-effect transistors

    NASA Astrophysics Data System (ADS)

    Böttger, Simon; Hermann, Sascha; Schulz, Stefan E.; Gessner, Thomas

    2016-10-01

    For an industrial realization of devices based on single-walled carbon nanotube (SWCNTs) such as field-effect transistors (FETs) it becomes increasingly important to consider technological aspects such as intrinsic device structure, integration process controllability as well as yield. From the perspective of a wafer-level integration technology, the influence of SWCNT length on the performance of short-channel CNT-FETs is demonstrated by means of a statistical and comparative study. Therefore, a methodological development of a length separation process based on size-exclusion chromatography was conducted in order to extract well-separated SWCNT dispersions with narrowed length distribution. It could be shown that short SWCNTs adversely affect integrability and reproducibility, underlined by a 25% decline of the integration yield with respect to long SWCNTs. Furthermore, it turns out that the significant changes in electrical performance are directly linked to a SWCNT chain formation in the transistor channel. In particular, CNT-FETs with long SWCNTs outperform reference and short SWCNTs with respect to hole mobility and subthreshold controllability by up to 300% and up to 140%, respectively. As a whole, this study provides a statistical and comparative analysis towards chain-less CNT-FETs fabricated with a wafer-level technology.

  8. Field Effect Transistor Using Carbon Nanotubes and DNA as Electrical Gate

    NASA Astrophysics Data System (ADS)

    Abdalla, S.; Al-Marzouki, F. M.; Al-Ghamdi, Ahmed A.

    2017-02-01

    We present an electronic sensor in the molecular scale, which is very sensitive for detection and sensing of DNA characteristics and DNA activities in particular activities between DNA duplex and any protein. Here, the device shows that DNA is electronically inserted to be on the same time as an electrical device transducer and as a biological target in a carbon nanotube-DNA-carbon nanotube electronic sensor. We have performed a DNA binding through an amide group by the electron transfer through amide group. The presented device has shown an efficient and rapid procedure to bind the electrical vulnerability of DNA with the detection of enzymatic effectiveness leading to high efficient biosensor.

  9. Impact of Radial Compression on the Conductance of Carbon Nanotube Field Effect Transistors

    NASA Astrophysics Data System (ADS)

    Choudhary, Sudhanshu; Saini, Gaurav; Qureshi, S.

    2014-01-01

    The electronic behavior of semiconducting carbon nanotubes based CNTFET under the influence of radial deformation defect present in the channel is theoretically investigated using nonequilibrium Green's function method self-consistently coupled with three-dimensional electrostatics. It was found that deformation in the CNTFET channel composed of a small diameter semiconducting carbon nanotube can increase its conductance by a factor of 4 or more depending upon the average reduction in the C-C bond length after compression. This increase in CNTFET conductance is directly related to the movement of the electronic states toward the Fermi level when the tubes are squeezed. Furthermore, the device ON-OFF current ratio also decreases with increase in applied compression which makes it hard to switch-OFF the device.

  10. Harmonic and intermodulation performance of carbon nanotube field-effect transistor-based and single-electron tunnelling transistor-based inverting amplifiers

    NASA Astrophysics Data System (ADS)

    Taher Abuelma'atti, Muhammad

    2011-07-01

    This article presents a simple mathematical model for the output-voltage/input-voltage characteristics of the carbon nanotube field-effect transistor (CNTFET)-based and the single-electron tunnelling transistor (SET)-based inverting amplifiers. The model, basically a Fourier-series, yields closed-form expressions for the amplitudes of the harmonic and intermodulation components of the output voltage resulting from a multisinusoidal input voltage. The special case of a two-tone equal-amplitude input signal is considered in detail. The results show that the harmonic and intermodulation performance of the CNTFET-based and SET-based inverting amplifiers is strongly dependent on the values of the bias voltage and the amplitudes of the input tones. Moreover, the results show that for the CNTFET-based inverting amplifier, either the relative second-order or the relative third-order intermodulation component is dominant, while for the SET-based inverting amplifier, the relative third-order intermodulation is always dominant. The results also show that all the harmonics and intermodulation products may exhibit minima at different values of the input bias voltages and tone amplitudes.

  11. Acoustic-assisted assembly of an individual monochromatic ultralong carbon nanotube for high on-current transistors

    PubMed Central

    Zhu, Zhenxing; Wei, Nan; Xie, Huanhuan; Zhang, Rufan; Bai, Yunxiang; Wang, Qi; Zhang, Chenxi; Wang, Sheng; Peng, Lianmao; Dai, Liming; Wei, Fei

    2016-01-01

    Great effort has been applied to scientific research on the controllable synthesis of carbon nanotubes (CNTs) with high semiconducting selectivity or high areal density toward the macroscale applications of high-performance carbon-based electronics. However, the key issue of compatibility between these two requirements for CNTs remains a challenge, blocking the expected performance boost of CNT devices. We report an in situ acoustic-assisted assembly of high-density monochromatic CNT tangles (m-CNT-Ts), consisting of one self-entangled CNT with a length of up to 100 mm and consistent chirality. On the basis of a minimum consumed energy model with a Strouhal number of approximately 0.3, the scale could be controlled within the range of 1 × 104 to 3 × 104 μm2 or even a larger range. Transistors fabricated with one m-CNT-T showed an on/off ratio of 103 to 106 with 4-mA on-state current, which is also the highest on-state current recorded so far for single CNT–based transistors. This acoustic-assisted assembly of chiral-consistent m-CNT-Ts will provide new opportunities for the fabrication of high-performance electronics based on perfect CNTs with high purity and high density. PMID:28138534

  12. Enhancement of carbon nanotube FET performance via direct synthesis of poly (sodium 4-styrenesulfonate) in the transistor channel

    NASA Astrophysics Data System (ADS)

    Toader, M.; Schubel, R.; Hartmann, M.; Scharfenberg, L.; Jordan, R.; Mertig, M.; Schulz, S. E.; Gessner, T.; Hermann, S.

    2016-09-01

    Direct synthesis of poly (sodium 4-styrenesulfonate) (P(NaSS)) inside the channel of single-walled carbon nanotube (SWCNT) field-effect transistors (FETs), is shown to be highly beneficial in improving the device parameters. Starting with monomeric compounds, the FET-channel was in-situ polymerized, using the self-initiated photografting and photopolymerization process. Upon formation of the P(NaSS) polymer matrix, we report improved device-to-device consistency, lower variability in the threshold voltage, higher drain currents and higher on/off ratios. Annealing in vacuum was shown to further improve the device performance and induce an ambipolar behavior. Moreover, those FET devices showed a long-term stability even under ambient environment.

  13. Single-Hole Charging and Discharging Phenomena in Carbon Nanotube Field-Effect-Transistor-Based Nonvolatile Memory

    NASA Astrophysics Data System (ADS)

    Ohori, Takahiro; Nagaso, Satoshi; Ohno, Yasuhide; Maehashi, Kenzo; Inoue, Koichi; Matsumoto, Kazuhiko

    2010-06-01

    We have fabricated nonvolatile memory based on top-gated carbon nanotube field-effect transistors (CNTFETs). Two kinds of insulating films, SiNx and SiO2, were deposited to control the hysteresis characteristics after the removal of water molecules around the single-walled CNT channels. The interface between the SiNx and SiO2 films is expected to act as a charge storage node of nonvolatile memory. The fabricated CNTFET-based memory devices clearly exhibited not only a memory effect but also good retention characteristics for charge storage. Furthermore, single-hole charging and discharging phenomena were clearly observed in the CNTFET-based memory devices by reducing the number of carriers trapped in the interface between the SiNx and SiO2 films. These results indicate that the CNTFET-based nonvolatile memory can be potentially used to realize single-electron memory.

  14. Attachment of a Genetically Engineered Antibody to a Carbon Nanotube Transistor for Detection of Prostate Cancer Biomarkers

    NASA Astrophysics Data System (ADS)

    Lerner, Mitchell; Dailey, Jennifer; Goldsmith, Brett; Robinson, Matthew; Johnson, A. T. Charlie

    2011-03-01

    We have developed a novel detection method for osteopontin (OPN) by attaching an engineered single chain variable fragment (scFv) protein with high binding affinity for OPN to a carbon nanotube transistor. Osteopontin is a potential new biomarker for prostate cancer; its presence in humans is already associated with several forms of cancer, arthritis, osteoporosis and stress. Prostate cancer is the most commonly diagnosed cancer and second leading cause of cancer deaths among American men and as such represents a major public health issue. Detection of early-stage cancer often results in successful treatment, with long term disease-free survival in 60-90% of patients. Electronic transport measurements are used to detect the presence of OPN in solution at clinically relevant concentrations.

  15. High-quality, highly concentrated semiconducting single-wall carbon nanotubes for use in field effect transistors and biosensors.

    PubMed

    Li, Wen-Shan; Hou, Peng-Xiang; Liu, Chang; Sun, Dong-Ming; Yuan, Jiangtan; Zhao, Shi-Yong; Yin, Li-Chang; Cong, Hongtao; Cheng, Hui-Ming

    2013-08-27

    We developed a simple and scalable selective synthesis method of high-quality, highly concentrated semiconducting single-wall carbon nanotubes (s-SWCNTs) by in situ hydrogen etching. Samples containing ~93% s-SWCNTs were obtained in bulk. These s-SWCNTs with good structural integrity showed a high oxidation resistance temperature of ~800 °C. Thin-film transistors based on the s-SWCNTs demonstrated a high carrier mobility of 21.1 cm(2) V(-1) s(-1) at an on/off ratio of 1.1 × 10(4) and a high on/off ratio of 4.0 × 10(5) with a carrier mobility of 7.0 cm(2) V(-1) s(-1). A biosensor fabricated using the s-SWCNTs had a very low dopamine detection limit of 10(-18) mol/L at room temperature.

  16. Probing Biological Processes on Supported Lipid Bilayers with Single-Walled Carbon Nanotube Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Zhou, Xinjian; Moran-Mirabal, Jose Manuel; Craighead, Harold; McEuen, Paul

    2006-03-01

    We have formed supported lipid bilayers (SLBs) by small unilamellar vesicle fusion on substrates containing single-walled carbon nanotube field-effect transistors (SWNT-FETs). We are able to detect the self-assembly of SLBs electrically with SWNT-FETs since their threshold voltages are shifted by this event. The SLB fully covers the NT surface and lipid molecules can diffuse freely in the bilayer surface across the NT. To study the interactions of important biological entities with receptors imbedded within the membrane, we have also integrated a membrane protein, GT1b ganglioside, in the bilayer. While bare gangliosides can diffuse freely across the NT, interestingly the NT acts as a diffusion barrier for the gangliosides when they are bound with tetanus toxin. This experiment opens the possibility of using SWNT-FETs as biosensors for label-free detection.

  17. Fabrication and Characterization of Self-Aligned T-gate High-Purity Semiconducting Carbon Nanotube RF Transistors

    NASA Astrophysics Data System (ADS)

    Che, Yuchi; Badmaev, Alexander; Kim, Pyojae; Jooyaie, Alborz; Zhou, Chongwu; Chongwu Zhou's nanolab Team

    2013-03-01

    We applied the scalable self-aligned T-shaped gate design to semiconducting nanotube RF transistors. In this way, the channel length can be scaled down to 140 nm which enables quasi ballistic transport, and the gate dielectric is reduced to 2-3 nm aluminum oxide, leading to quasi quantum capacitance operation. As a result, our nanotube transistors exhibit excellent on-chip device performance and high linearity with channel length scaling down to 140 nm. With T-shaped gate structure, a cut-off frequency up to 22 GHz and power gain frequency of 10 GHz for separated nanotube transistor are achieved. The T-shaped gate design enables high-yield wafer-scale fabrication with controllable gate length scaling. Furthermore, we also characterized the linearity properties of nanotube transistors, with the 1-dB compression point measurement, in source/load pull setup, with positive power gain to our knowledge, for the first time. Above all, our work reveals that the semiconducting nanotube RF transistor is an interesting and promising direction in high frequency device and circuit exploration.

  18. Top-Contact Self-Aligned Printing for High-Performance Carbon Nanotube Thin-Film Transistors with Sub-Micron Channel Length.

    PubMed

    Cao, Xuan; Wu, Fanqi; Lau, Christian; Liu, Yihang; Liu, Qingzhou; Zhou, Chongwu

    2017-02-28

    Semiconducting single-wall carbon nanotubes are ideal semiconductors for printed thin-film transistors due to their excellent electrical performance and intrinsic printability with solution-based deposition. However, limited by resolution and registration accuracy of current printing techniques, previously reported fully printed nanotube transistors had rather long channel lengths (>20 μm) and consequently low current-drive capabilities (<0.2 μA/μm). Here we report fully inkjet printed nanotube transistors with dramatically enhanced on-state current density of ∼4.5 μA/μm by downscaling the devices to a sub-micron channel length with top-contact self-aligned printing and employing high-capacitance ion gel as the gate dielectric. Also, the printed transistors exhibited a high on/off ratio of ∼10(5), low-voltage operation, and good mobility of ∼15.03 cm(2) V(-1)s(-1). These advantageous features of our printed transistors are very promising for future high-definition printed displays and sensing systems, low-power consumer electronics, and large-scale integration of printed electronics.

  19. In Situ Fabrication of Nano Transistors by Selective Deposition of a Gate Dielectric around Carbon Nanotubes.

    PubMed

    Lee, Jae-Hyeok; Jeong, Young K; Peters, John A; Nam, Gwang-Hyeon; Jin, Sunghwan; Kim, Jae-Ho

    2015-11-04

    The CNT-SiO2 core-shell structure is particularly appealing because the insulating SiO2 layer wraps around the CNTs, functioning as a gate dielectric. However, it is still a challenge to expose both end-caps of the structure for enabling them to serve as electrodes, which additionally requires complicated postprocesses. Here, we present a unique CNTs-SiO2 core-shell structure where both ends are uncovered with SiO2 in a "peeled-wire" structure. In this structure, SiO2 particles partially encapsulate the CNTs during the synthesis, resulting in both end-caps of the nanotube being self-exposed and electrically conductive. The field-effect transistor build-up with this structure exhibits p-type characteristics with a linear conductance behavior on Id-Vd output performance. This approach for making self-formed electrodes in the CNT-SiO2 core-shell structure provides a simple and efficient way for applying them to future nanodevices in terms of process simplicity and cost effectiveness.

  20. Extrinsic and intrinsic photoresponse in monodisperse carbon nanotube thin film transistors

    NASA Astrophysics Data System (ADS)

    Sczygelski, Erik; Sangwan, Vinod K.; Wu, Chung-Chiang; Arnold, Heather N.; Everaerts, Ken; Marks, Tobin J.; Hersam, Mark C.; Lauhon, Lincoln J.

    2013-02-01

    Spectroscopic, time-resolved scanning photocurrent microscopy is shown to distinguish the intrinsic photoresponse of monodisperse semiconducting (99%) single-walled carbon nanotubes (SWCNTs) from the extrinsic photoresponse of the substrate. A persistent positive photocurrent induced by near-infrared excitation is attributed to the generation of free carriers by inter-band excitation in SWCNTs. For shorter excitation wavelengths, absorption by the Si substrate generates two types of photocurrent: a transient positive photoresponse, identified as a displacement current, and a persistent negative photocurrent that arises from photogating of the SWCNT thin film.

  1. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Operation Mechanism of Double-Walled Carbon Nanotubes Transistors Investigated By ab initio Calculations

    NASA Astrophysics Data System (ADS)

    Lan, Hai-Ping; Zhang, Shuang

    2009-11-01

    Recently, a new switching characteristic of double-walled carbon nanotubes (DWNTs) transistors is found in during experiments. We carry out a series of ab intio calculations on DWNTs' electronic properities, together with verification on the electronic response under the electric field. Our results reveal that the peculiar energy states relation in DWNTs and related contact modes should account for the distinct switching behavior of DWNT transistors. We believe these results have important implications in the fabrication and understanding of electronic devices with DWNTs.

  2. Supported lipid bilayer/carbon nanotube hybrids

    NASA Astrophysics Data System (ADS)

    Zhou, Xinjian; Moran-Mirabal, Jose M.; Craighead, Harold G.; McEuen, Paul L.

    2007-03-01

    Carbon nanotube transistors combine molecular-scale dimensions with excellent electronic properties, offering unique opportunities for chemical and biological sensing. Here, we form supported lipid bilayers over single-walled carbon nanotube transistors. We first study the physical properties of the nanotube/supported lipid bilayer structure using fluorescence techniques. Whereas lipid molecules can diffuse freely across the nanotube, a membrane-bound protein (tetanus toxin) sees the nanotube as a barrier. Moreover, the size of the barrier depends on the diameter of the nanotube-with larger nanotubes presenting bigger obstacles to diffusion. We then demonstrate detection of protein binding (streptavidin) to the supported lipid bilayer using the nanotube transistor as a charge sensor. This system can be used as a platform to examine the interactions of single molecules with carbon nanotubes and has many potential applications for the study of molecular recognition and other biological processes occurring at cell membranes.

  3. Does Organic Field Effect Transistors (OFETs) Device Performance using Single-walled Carbon Nanotubes (SWNTs) Depend on the Density of SWNT in the Electrode?

    NASA Astrophysics Data System (ADS)

    Kang, Narae; Sarker, Biddut K.; Khondaker, Saiful I.

    2012-02-01

    Carbon nanotubes as an electrode material for organic field effect transistors (OFETs) have attracted significant attention. One open question is that whether the density of the Single-walled carbon nanotubes (SWNTs) in the electrode has any influence in the device performance of OFETs. In order to address this issue, we fabricated OFETs using SWNT aligned array electrode, where we varied the linear density of the nanotubes in the array of the electrodes during dielectrophoretic assembly of high quality surfactant free and stable aqueous SWNT solution. The source and drain of SWNT electrodes have been formed by electron beam lithography (EBL) and oxygen plasma etching. The OFETs were fabricated by depositing a thin film of poly (3-hexylthiophene) on the SWNT electrodes. We will present detailed result of our study.

  4. Flexible logic circuits based on top-gate thin film transistors with printed semiconductor carbon nanotubes and top electrodes

    NASA Astrophysics Data System (ADS)

    Xu, Weiwei; Liu, Zhen; Zhao, Jianwen; Xu, Wenya; Gu, Weibing; Zhang, Xiang; Qian, Long; Cui, Zheng

    2014-11-01

    In this report printed thin film transistors and logic circuits on flexible substrates are reported. The top-gate thin film transistors were made of the sorted semiconducting single-walled carbon nanotubes (sc-SWCNTs) ink as channel material and printed silver lines as top electrodes and interconnect. 5 nm HfOx thin films pre-deposited on PET substrates by atomic layer deposition (ALD) act as the adhesion layers to significantly improve the immobilization efficiency of sc-SWCNTs and environmental stability. The immobilization mechanism was investigated in detail. The flexible partially-printed top-gate SWCNT TFTs display ambipolar characteristics with slightly strong p-type when using 50 nm HfOx thin films as dielectric layer, as well as the encapsulation layer by atomic layer deposition (ALD) at 120 °C. The hole mobility, on/off ratio and subthreshold swing (SS) are ~46.2 cm2 V-1 s-1, 105 and 109 mV per decade, respectively. Furthermore, partially-printed TFTs show small hysteresis, low operating voltage (2 V) and high stability in air. Flexible partially-printed inverters show good performance with voltage gain up to 33 with 1.25 V supply voltage, and can work at 10 kHz. The frequency of flexible partially-printed five-stage ring oscillators can reach 1.7 kHz at supply voltages of 2 V with per stage delay times of 58.8 μs. This work paves a way to achieve printed SWCNT advanced logic circuits and systems on flexible substrates.In this report printed thin film transistors and logic circuits on flexible substrates are reported. The top-gate thin film transistors were made of the sorted semiconducting single-walled carbon nanotubes (sc-SWCNTs) ink as channel material and printed silver lines as top electrodes and interconnect. 5 nm HfOx thin films pre-deposited on PET substrates by atomic layer deposition (ALD) act as the adhesion layers to significantly improve the immobilization efficiency of sc-SWCNTs and environmental stability. The immobilization mechanism

  5. Flexible logic circuits based on top-gate thin film transistors with printed semiconductor carbon nanotubes and top electrodes.

    PubMed

    Xu, Weiwei; Liu, Zhen; Zhao, Jianwen; Xu, Wenya; Gu, Weibing; Zhang, Xiang; Qian, Long; Cui, Zheng

    2014-12-21

    In this report printed thin film transistors and logic circuits on flexible substrates are reported. The top-gate thin film transistors were made of the sorted semiconducting single-walled carbon nanotubes (sc-SWCNTs) ink as channel material and printed silver lines as top electrodes and interconnect. 5 nm HfOx thin films pre-deposited on PET substrates by atomic layer deposition (ALD) act as the adhesion layers to significantly improve the immobilization efficiency of sc-SWCNTs and environmental stability. The immobilization mechanism was investigated in detail. The flexible partially-printed top-gate SWCNT TFTs display ambipolar characteristics with slightly strong p-type when using 50 nm HfO(x) thin films as dielectric layer, as well as the encapsulation layer by atomic layer deposition (ALD) at 120 °C. The hole mobility, on/off ratio and subthreshold swing (SS) are ∼ 46.2 cm(2) V(-1) s(-1), 10(5) and 109 mV per decade, respectively. Furthermore, partially-printed TFTs show small hysteresis, low operating voltage (2 V) and high stability in air. Flexible partially-printed inverters show good performance with voltage gain up to 33 with 1.25 V supply voltage, and can work at 10 kHz. The frequency of flexible partially-printed five-stage ring oscillators can reach 1.7 kHz at supply voltages of 2 V with per stage delay times of 58.8 μs. This work paves a way to achieve printed SWCNT advanced logic circuits and systems on flexible substrates.

  6. Gate voltage dependent characteristics of p-n diodes and bipolar transistors based on multiwall CN(x)/carbon nanotube intramolecular junctions.

    PubMed

    Zhang, W J; Zhang, Q F; Chai, Y; Shen, X; Wu, J L

    2007-10-03

    The electrical transport characteristics of multiwall CN(x)/carbon nanotube intramolecular junctions were studied. The junctions could be used as diodes. We found that the rectification resulted from p-n junctions, not from metal-semiconductor junctions. The gate effect was very weak when the diodes were reverse biased. At forward bias, however, some of the p-n diodes could be n-type transistors. Experimental results supported the opinion that the gate voltage dependent property is derived from the Schottky barrier between the CN(x) part and the electrode. Using p-n diodes, a bipolar transistor with nanoscale components was built, whose behavior was very similar to that of a conventional planar bipolar transistor.

  7. Bio-fabrication of nanomesh channels of single-walled carbon nanotubes for locally gated field-effect transistors

    NASA Astrophysics Data System (ADS)

    Byeon, Hye-Hyeon; Lee, Woo Chul; Kim, Wonbin; Kim, Seong Keun; Kim, Woong; Yi, Hyunjung

    2017-01-01

    Single-walled carbon nanotubes (SWNTs) are one of the promising electronic components for nanoscale electronic devices such as field-effect transistors (FETs) owing to their excellent device characteristics such as high conductivity, high carrier mobility and mechanical flexibility. Localized gating gemometry of FETs enables individual addressing of active channels and allows for better electrostatics via thinner dielectric layer of high k-value. For localized gating of SWNTs, it becomes critical to define SWNTs of controlled nanostructures and functionality onto desired locations in high precision. Here, we demonstrate that a biologically templated approach in combination of microfabrication processes can successfully produce a nanostructured channels of SWNTs for localized active devices such as local bottom-gated FETs. A large-scale nanostructured network, nanomesh, of SWNTs were assembled in solution using an M13 phage with strong binding affinity toward SWNTs and micrometer-scale nanomesh channels were defined using negative photolithography and plasma-etching processes. The bio-fabrication approach produced local bottom-gated FETs with remarkably controllable nanostructures and successfully enabled semiconducting behavior out of unsorted SWNTs. In addition, the localized gating scheme enhanced the device performances such as operation voltage and I on/I off ratio. We believe that our approach provides a useful and integrative method for fabricating electronic devices out of nanoscale electronic materials for applications in which tunable electrical properties, mechanical flexibility, ambient stability, and chemical stability are of crucial importance.

  8. Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric

    PubMed Central

    Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; Seong, Hyejeong; Im, Sung Gap; Choi, Sung-Jin; Choi, Yang-Kyu

    2016-01-01

    Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm2 V−1 sec−1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 104), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process. PMID:27184121

  9. High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

    PubMed

    Yang, Yingjun; Ding, Li; Han, Jie; Zhang, Zhiyong; Peng, Lian-Mao

    2017-03-29

    Solution-derived carbon nanotube (CNT) network films with high semiconducting purity are suitable materials for the wafer-scale fabrication of field-effect transistors (FETs) and integrated circuits (ICs). However, it is challenging to realize high-performance complementary metal-oxide semiconductor (CMOS) FETs with high yield and stability on such CNT network films, and this difficulty hinders the development of CNT-film-based ICs. In this work, we developed a doping-free process for the fabrication of CMOS FETs based on solution-processed CNT network films, in which the polarity of the FETs was controlled using Sc or Pd as the source/drain contacts to selectively inject carriers into the channels. The fabricated top-gated CMOS FETs showed high symmetry between the characteristics of n- and p-type devices and exhibited high-performance uniformity and excellent scalability down to a gate length of 1 μm. Many common types of CMOS ICs, including typical logic gates, sequential circuits, and arithmetic units, were constructed based on CNT films, and the fabricated ICs exhibited rail-to-rail outputs because of the high noise margin of CMOS circuits. In particular, 4-bit full adders consisting of 132 CMOS FETs were realized with 100% yield, thereby demonstrating that this CMOS technology shows the potential to advance the development of medium-scale CNT-network-film-based ICs.

  10. Low Hysteresis Carbon Nanotube Transistors Constructed via a General Dry-Laminating Encapsulation Method on Diverse Surfaces.

    PubMed

    Yang, Yi; Wang, Zhongwu; Xu, Zeyang; Wu, Kunjie; Yu, Xiaoqin; Chen, Xiaosong; Meng, Yancheng; Li, Hongwei; Qiu, Song; Jin, Hehua; Li, Liqiang; Li, Qingwen

    2017-04-11

    Electrical hysteresis in carbon nanotube thin-film transistor (CNTTFT) due to surface adsorption of H2O/O2 is a severe obstacle for practical applications. The conventional encapsulation methods based on vacuum-deposited inorganic materials or wet-coated organic materials have some limitations. In this work, we develop a general and highly efficient dry-laminating encapsulation method to reduce the hysteresis of CNTTFTs, which may simultaneously realize the construction and encapsulation of CNTTFT. Furthermore, by virtue of dry procedure and wide compatibility of PMMA, this method is suitable for the construction of CNTTFT on diverse surface including both inorganic and organic dielectric materials. Significantly, the dry-encapsulated CNTTFT exhibits very low or even negligible hysteresis with good repeatability and air stability, which is greatly superior to the nonencapsulated and wet-encapsulated CNTTFT with spin-coated PMMA. The dry-laminating encapsulation strategy, a kind of technological innovation, resolves a significant problem of CNTTFT and therefore will be promising in facile transferring and packaging the CNT films for high-performance optoelectronic devices.

  11. Selective Dispersion of Highly Pure Large-Diameter Semiconducting Carbon Nanotubes by a Flavin for Thin-Film Transistors.

    PubMed

    Park, Minsuk; Kim, Somin; Kwon, Hyeokjae; Hong, Sukhyun; Im, Seongil; Ju, Sang-Yong

    2016-09-07

    Scalable and simple methods for selective extraction of pure, semiconducting (s) single-walled carbon nanotubes (SWNTs) is of profound importance for electronic and photovoltaic applications. We report a new, one-step procedure to obtain respective large-diameter s- and metallic (m)-SWNT enrichment purity in excess of 99% and 78%, respectively, via interaction between the aromatic dispersing agent and SWNTs. The approach utilizes N-dodecyl isoalloxazine (FC12) as a surfactant in conjunction with sonication and benchtop centrifugation methods. After centrifugation, the supernatant is enriched in s-SWNTs with less carbonaceous impurities, whereas precipitate is enhanced in m-SWNTs. In addition, the use of an increased centrifugal force enhances both the purity and population of larger diameter s-SWNTs. Photoinduced energy transfer from FC12 to SWNTs is facilitated by respective electronic level alignment. Owing to its peculiar photoreduction capability, FC12 can be employed to precipitate SWNTs upon UV irradiation and observe absorption of higher optical transitions of SWNTs. A thin-film transistor prepared from a dispersion of enriched s-SWNTs was fabricated to verify electrical performance of the sorted sample and was observed to display p-type conductance with an average on/off ratio over 10(6) and an average mobility over 10 cm(2)/V·s.

  12. Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric

    NASA Astrophysics Data System (ADS)

    Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; Seong, Hyejeong; Im, Sung Gap; Choi, Sung-Jin; Choi, Yang-Kyu

    2016-05-01

    Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm2 V‑1 sec‑1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 104), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process.

  13. Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric.

    PubMed

    Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; Seong, Hyejeong; Im, Sung Gap; Choi, Sung-Jin; Choi, Yang-Kyu

    2016-05-17

    Printing electronics has become increasingly prominent in the field of electronic engineering because this method is highly efficient at producing flexible, low-cost and large-scale thin-film transistors. However, TFTs are typically constructed with rigid insulating layers consisting of oxides and nitrides that are brittle and require high processing temperatures, which can cause a number of problems when used in printed flexible TFTs. In this study, we address these issues and demonstrate a method of producing inkjet-printed TFTs that include an ultra-thin polymeric dielectric layer produced by initiated chemical vapor deposition (iCVD) at room temperature and highly purified 99.9% semiconducting carbon nanotubes. Our integrated approach enables the production of flexible logic circuits consisting of CNT-TFTs on a polyethersulfone (PES) substrate that have a high mobility (up to 9.76 cm(2) V(-1) sec(-)1), a low operating voltage (less than 4 V), a high current on/off ratio (3 × 10(4)), and a total device yield of 90%. Thus, it should be emphasized that this study delineates a guideline for the feasibility of producing flexible CNT-TFT logic circuits with high performance based on a low-cost and simple fabrication process.

  14. Sdc-Cntfet Stepwise Doping Channel Design in Carbon Nanotube Field Effect Transistors for Improving Short Channel Effects Immunity

    NASA Astrophysics Data System (ADS)

    Jamalabadi, Zahra; Keshavarzi, Parviz; Naderi, Ali

    2014-01-01

    A novel carbon nanotube field-effect transistor with stepwise doping profile channel (SDC-CNTFET) is introduced for short-channel effects (SCEs) improvement. In SDC-CNTFET, the channel is divided into five sections of equal length. Impurity concentration was reduced from 0.8 nm-1 to zero from the source side to the drain side of the channel, with stepwise profile. The devices have been simulated by the self-consistent solution of two-dimensional (2D) Poisson-Schrödinger equations, within the nonequilibrium Green's function (NEGF) formalism. We demonstrate that the proposed structure for CNTFETs shows considerable improvement in device performance focusing on leakage current and ON-OFF current ratio. In addition, the investigation of SCEs for the proposed structure shows the improved drain-induced barrier lowering (DIBL) and subthreshold swing (SS). Moreover, we will prove that the proposed structure has acceptable performance at different values of channel impurity concentration in terms of delay and power-delay product (PDP). All these investigations introduce SDC-CNTFET as a more reliable device structure in short-channel regime.

  15. Novel attributes in the performance and scaling effects of carbon nanotube field-effect transistors with halo doping

    NASA Astrophysics Data System (ADS)

    Arefinia, Zahra; Orouji, Ali A.

    2009-06-01

    In this paper, we performed a comprehensive scaling study of a carbon nanotube field-effect transistor (CNTFET) with halo doping (HD) using self-consistent and atomistic scale simulations. Our simulation results demonstrate that drain induced barrier lowering (DIBL) diminishes in the HD-CNTFET due to a step in the potential of the CNT at the interface of p-doped and undoped regions in the channel. Also, the hot carrier effect minimizes with reduction of the peak of the electric field at the drain side of the HD-CNTFET. Moreover, the features of the HD-CNTFET can be controlled by the length and concentration engineering of the HD region. Leakage current, on-off current ratio and subthreshold swing improve with an increase of the length and concentration of the HD region, due to the increment of the threshold voltage and the barrier height of the p-n junction near the source. Therefore, this work can provide an incentive for further experimental exploration.

  16. Photopatternable source/drain electrodes using multiwalled carbon nanotube/polymer nanocomposites for organic field-effect transistors.

    PubMed

    Hong, Kipyo; Yang, Chanwoo; Kim, Se Hyun; Jang, Jaeyoung; Nam, Sooji; Park, Chan Eon

    2009-10-01

    We fabricated photopatternable and conductive polymer/multiwalled carbon nanotube (MWNT) composites by dispersing MWNTs with poly(4-styrenesulfonic acid) (PSS) and poly(acrylic acid) (PAA) in water. PAA enables photo-cross-linking in the composite by adding ammonium dichromate, and PSS assists the dispersion of MWNTs in the composites, leading to higher conductivity. Composite films of PAA/PSS-MWNTs were characterized by conductivities of 1.4-210 S/cm and a work function of 4.46 eV, which could be increased to 4.76 eV during UV photo-cross-linking. By using PAA/PSS-MWNT composites as source/drain electrodes, 6,13-bis(triisopropylsilylethynyl)pentacene field-effect transistors (FET) exhibited a field-effect mobility of 0.101 +/- 0.034 cm(2)/(V s), which is 9 times higher than that of FETs fabricated with gold as source/drain electrodes (0.012 +/- 0.003 cm(2)/(V s)).

  17. Mobilities in ambipolar field effect transistors based on single-walled carbon nanotube network and formed on a gold nanoparticle template

    SciTech Connect

    Wongsaeng, Chalao; Singjai, Pisith

    2014-04-07

    Ambipolar field effect transistors based on a single-walled carbon nanotube (SWNT) network formed on a gold nanoparticle (AuNP) template with polyvinyl alcohol as a gate insulator were studied by measuring the current–gate voltage characteristics. It was found that the mobilities of holes and electrons increased with increasing AuNP number density. The disturbances in the flow pattern of the carbon feedstock in the chemical vapor deposition growth that were produced by the AuNP geometry, resulted in the differences in the crystallinity and the diameter, as well as the changes in the degree of the semiconductor behavior of the SWNTs.

  18. Solution-processed single-walled carbon nanotube field effect transistors and bootstrapped inverters for disintegratable, transient electronics

    SciTech Connect

    Jin, Sung Hun E-mail: jhl@snu.ac.kr Shin, Jongmin; Cho, In-Tak; Lee, Jong-Ho E-mail: jhl@snu.ac.kr; Han, Sang Youn; Lee, Dong Joon; Lee, Chi Hwan; Rogers, John A. E-mail: jhl@snu.ac.kr

    2014-07-07

    This paper presents materials, device designs, and physical/electrical characteristics of a form of nanotube electronics that is physically transient, in the sense that all constituent elements dissolve and/or disperse upon immersion into water. Studies of contact effects illustrate the ability to use water soluble metals such as magnesium for source/drain contacts in nanotube based field effect transistors. High mobilities and on/off ratios in transistors that use molybdenum, silicon nitride, and silicon oxide enable full swing characteristics for inverters at low voltages (∼5 V) and with high gains (∼30). Dissolution/disintegration tests of such systems on water soluble sheets of polyvinyl alcohol demonstrate physical transience within 30 min.

  19. Oxygen and light sensitive field-effect transistors based on ZnO nanoparticles attached to individual double-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Chanaewa, Alina; Juárez, Beatriz H.; Weller, Horst; Klinke, Christian

    2011-12-01

    The attachment of semiconducting nanoparticles to carbon nanotubes is one of the most challenging subjects in nanotechnology. Successful high coverage attachment and control over the charge transfer mechanism and photo-current generation open a wide field of new applications such as highly effective solar cells and fibre-enhanced polymers. In this work we study the charge transfer in individual double-walled carbon nanotubes highly covered with uniform ZnO nanoparticles. The synthetic colloidal procedure was chosen to avoid long-chained ligands at the nanoparticle-nanotube interface. The resulting composite material was used as conductive channel in a field-effect transistor device and the electrical photo-response was analysed under various conditions. By means of the transfer characteristics we could elucidate the mechanism of charge transfer from non-covalently attached semiconducting nanoparticles to carbon nanotubes. The role of positive charges remaining on the nanoparticles is discussed in terms of a gating effect.The attachment of semiconducting nanoparticles to carbon nanotubes is one of the most challenging subjects in nanotechnology. Successful high coverage attachment and control over the charge transfer mechanism and photo-current generation open a wide field of new applications such as highly effective solar cells and fibre-enhanced polymers. In this work we study the charge transfer in individual double-walled carbon nanotubes highly covered with uniform ZnO nanoparticles. The synthetic colloidal procedure was chosen to avoid long-chained ligands at the nanoparticle-nanotube interface. The resulting composite material was used as conductive channel in a field-effect transistor device and the electrical photo-response was analysed under various conditions. By means of the transfer characteristics we could elucidate the mechanism of charge transfer from non-covalently attached semiconducting nanoparticles to carbon nanotubes. The role of positive

  20. Transition of single-walled carbon nanotubes from metallic to semiconducting in field-effect transistors by hydrogen plasma treatment.

    PubMed

    Zheng, Gang; Li, Qunqing; Jiang, Kaili; Zhang, Xiaobo; Chen, Jia; Ren, Zheng; Fan, Shoushan

    2007-06-01

    We report hydrogen plasma treatment results on converting the metallic single-walled carbon nanotubes to semiconducting single-walled carbon nanotubes. We found that the as-grown single-walled carbon nanotubes (SWNTs) can be sorted as three groups which behave as metallic, as-metallic, and semiconducting SWNTs. These three groups have different changes under hydrogen plasma treatment and successive annealing process. The SWNTs can be easily hydrogenated in the hydrogen plasma environment and the as-metallic SWNTs can be transformed to semiconducting SWNTs. The successive annealing process can break the C-H bond, so the conversion is reversible.

  1. A New Approach to the Characteristics and Short-Channel Effects of Double-Gate Carbon Nanotube Field-Effect Transistors using MATLAB: A Numerical Study

    NASA Astrophysics Data System (ADS)

    Heidari, Alireza; Heidari, Niloofar; Jahromi, Foad Khademi; Amiri, Roozbeh; Ghorbani, Mohammadali

    2012-07-01

    In this paper, first, the impact of different gate arrangements on the short-channel effects of carbon nanotube field-effect transistors with doped source and drain with the self-consistent solution of the three-dimensional Poisson equation and the Schr¨odinger equation with open boundary conditions, within the non-equilibrium Green function, is investigated. The results indicate that the double-gate structure possesses a quasi-ideal subthreshold oscillation and an acceptable decrease in the drain induced barrier even for a relatively thick gate oxide (5 nm). Afterward, the electrical characteristics of the double-gate carbon nanotube field-effect transistors (DG-CNTFET) are investigated. The results demonstrate that an increase in diameter and density of the nanotubes in the DG-CNTFET increases the on-state current. Also, as the drain voltage increases, the off-state current of the DG-CNTFET decreases. In addition, regarding the negative gate voltages, for a high drain voltage, increasing in the drain current due to band-to-band tunnelling requires a larger negative gate voltage, and for a low drain voltage, resonant states appear

  2. Tuning the threshold voltage of carbon nanotube transistors by n-type molecular doping for robust and flexible complementary circuits

    PubMed Central

    Wang, Huiliang; Wei, Peng; Li, Yaoxuan; Han, Jeff; Lee, Hye Ryoung; Naab, Benjamin D.; Liu, Nan; Wang, Chenggong; Adijanto, Eric; Tee, Benjamin C.-K.; Morishita, Satoshi; Li, Qiaochu; Gao, Yongli; Cui, Yi; Bao, Zhenan

    2014-01-01

    Tuning the threshold voltage of a transistor is crucial for realizing robust digital circuits. For silicon transistors, the threshold voltage can be accurately controlled by doping. However, it remains challenging to tune the threshold voltage of single-wall nanotube (SWNT) thin-film transistors. Here, we report a facile method to controllably n-dope SWNTs using 1H-benzoimidazole derivatives processed via either solution coating or vacuum deposition. The threshold voltages of our polythiophene-sorted SWNT thin-film transistors can be tuned accurately and continuously over a wide range. Photoelectron spectroscopy measurements confirmed that the SWNT Fermi level shifted to the conduction band edge with increasing doping concentration. Using this doping approach, we proceeded to fabricate SWNT complementary inverters by inkjet printing of the dopants. We observed an unprecedented noise margin of 28 V at VDD = 80 V (70% of 1/2VDD) and a gain of 85. Additionally, robust SWNT complementary metal−oxide−semiconductor inverter (noise margin 72% of 1/2VDD) and logic gates with rail-to-rail output voltage swing and subnanowatt power consumption were fabricated onto a highly flexible substrate. PMID:24639537

  3. On-Chip Chemical Self-Assembly of Semiconducting Single-Walled Carbon Nanotubes (SWNTs): Toward Robust and Scale Invariant SWNTs Transistors.

    PubMed

    Derenskyi, Vladimir; Gomulya, Widianta; Talsma, Wytse; Salazar-Rios, Jorge Mario; Fritsch, Martin; Nirmalraj, Peter; Riel, Heike; Allard, Sybille; Scherf, Ullrich; Loi, Maria A

    2017-04-05

    In this paper, the fabrication of carbon nanotubes field effect transistors by chemical self-assembly of semiconducting single walled carbon nanotubes (s-SWNTs) on prepatterned substrates is demonstrated. Polyfluorenes derivatives have been demonstrated to be effective in selecting s-SWNTs from raw mixtures. In this work the authors functionalized the polymer with side chains containing thiols, to obtain chemical self-assembly of the selected s-SWNTs on substrates with prepatterned gold electrodes. The authors show that the full side functionalization of the conjugated polymer with thiol groups partially disrupts the s-SWNTs selection, with the presence of metallic tubes in the dispersion. However, the authors determine that the selectivity can be recovered either by tuning the number of thiol groups in the polymer, or by modulating the polymer/SWNTs proportions. As demonstrated by optical and electrical measurements, the polymer containing 2.5% of thiol groups gives the best s-SWNT purity. Field-effect transistors with various channel lengths, using networks of SWNTs and individual tubes, are fabricated by direct chemical self-assembly of the SWNTs/thiolated-polyfluorenes on substrates with lithographically defined electrodes. The network devices show superior performance (mobility up to 24 cm(2) V(-1) s(-1) ), while SWNTs devices based on individual tubes show an unprecedented (100%) yield for working devices. Importantly, the SWNTs assembled by mean of the thiol groups are stably anchored to the substrate and are resistant to external perturbation as sonication in organic solvents.

  4. Fully Screen-Printed, Large-Area, and Flexible Active-Matrix Electrochromic Displays Using Carbon Nanotube Thin-Film Transistors.

    PubMed

    Cao, Xuan; Lau, Christian; Liu, Yihang; Wu, Fanqi; Gui, Hui; Liu, Qingzhou; Ma, Yuqiang; Wan, Haochuan; Amer, Moh R; Zhou, Chongwu

    2016-11-22

    Semiconducting single-wall carbon nanotubes are ideal semiconductors for printed electronics due to their advantageous electrical and mechanical properties, intrinsic printability in solution, and desirable stability in air. However, fully printed, large-area, high-performance, and flexible carbon nanotube active-matrix backplanes are still difficult to realize for future displays and sensing applications. Here, we report fully screen-printed active-matrix electrochromic displays employing carbon nanotube thin-film transistors. Our fully printed backplane shows high electrical performance with mobility of 3.92 ± 1.08 cm(2) V(-1) s(-1), on-off current ratio Ion/Ioff ∼ 10(4), and good uniformity. The printed backplane was then monolithically integrated with an array of printed electrochromic pixels, resulting in an entirely screen-printed active-matrix electrochromic display (AMECD) with good switching characteristics, facile manufacturing, and long-term stability. Overall, our fully screen-printed AMECD is promising for the mass production of large-area and low-cost flexible displays for applications such as disposable tags, medical electronics, and smart home appliances.

  5. Effect of Polymer Gate Dielectrics on Charge Transport in Carbon Nanotube Network Transistors: Low-k Insulator for Favorable Active Interface.

    PubMed

    Lee, Seung-Hoon; Xu, Yong; Khim, Dongyoon; Park, Won-Tae; Kim, Dong-Yu; Noh, Yong-Young

    2016-11-30

    Charge transport in carbon nanotube network transistors strongly depends on the properties of the gate dielectric that is in direct contact with the semiconducting carbon nanotubes. In this work, we investigate the dielectric effects on charge transport in polymer-sorted semiconducting single-walled carbon nanotube field-effect transistors (s-SWNT-FETs) by using three different polymer insulators: A low-permittivity (εr) fluoropolymer (CYTOP, εr = 1.8), poly(methyl methacrylate) (PMMA, εr = 3.3), and a high-εr ferroelectric relaxor [P(VDF-TrFE-CTFE), εr = 14.2]. The s-SWNT-FETs with polymer dielectrics show typical ambipolar charge transport with high ON/OFF ratios (up to ∼10(5)) and mobilities (hole mobility up to 6.77 cm(2) V(-1) s(-1) for CYTOP). The s-SWNT-FET with the lowest-k dielectric, CYTOP, exhibits the highest mobility owing to formation of a favorable interface for charge transport, which is confirmed by the lowest activation energies, evaluated by the fluctuation-induced tunneling model (FIT) and the traditional Arrhenius model (EaFIT = 60.2 meV and EaArr = 10 meV). The operational stability of the devices showed a good agreement with the activation energies trend (drain current decay ∼14%, threshold voltage shift ∼0.26 V in p-type regime of CYTOP devices). The poor performance in high-εr devices is accounted for by a large energetic disorder caused by the randomly oriented dipoles in high-k dielectrics. In conclusion, the low-k dielectric forms a favorable interface with s-SWNTs for efficient charge transport in s-SWNT-FETs.

  6. Carbon nanotube composite materials

    DOEpatents

    O'Bryan, Gregory; Skinner, Jack L; Vance, Andrew; Yang, Elaine Lai; Zifer, Thomas

    2015-03-24

    A material consisting essentially of a vinyl thermoplastic polymer, un-functionalized carbon nanotubes and hydroxylated carbon nanotubes dissolved in a solvent. Un-functionalized carbon nanotube concentrations up to 30 wt % and hydroxylated carbon nanotube concentrations up to 40 wt % can be used with even small concentrations of each (less than 2 wt %) useful in producing enhanced conductivity properties of formed thin films.

  7. Carbon Based Transistors and Nanoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Rouhi, Nima

    Carbon based materials (carbon nanotube and graphene) has been extensively researched during the past decade as one of the promising materials to be used in high performance device technology. In long term it is thought that they may replace digital and/or analog electronic devices, due to their size, near-ballistic transport, and high stability. However, a more realistic point of insertion into market may be the printed nanoelectronic circuits and sensors. These applications include printed circuits for flexible electronics and displays, large-scale bendable electrical contacts, bio-membranes and bio sensors, RFID tags, etc. In order to obtain high performance thin film transistors (as the basic building block of electronic circuits) one should be able to manufacture dense arrays of all semiconducting nanotubes. Besides, graphene synthesize and transfer technology is in its infancy and there is plenty of room to improve the current techniques. To realize the performance of nanotube and graphene films in such systems, we need to economically fabricate large-scale devices based on these materials. Following that the performance control over such devices should also be considered for future design variations for broad range of applications. Here we have first investigated carbon nanotube ink as the base material for our devices. The primary ink used consisted of both metallic and semiconducting nanotubes which resulted in networks suitable for moderate-resistivity electrical connections (such as interconnects) and rfmatching circuits. Next, purified all-semiconducting nanotube ink was used to fabricate waferscale, high performance (high mobility, and high on/off ratio) thin film transistors for printed electronic applications. The parameters affecting device performance were studied in detail to establish a roadmap for the future of purified nanotube ink printed thin film transistors. The trade of between mobility and on/off ratio of such devices was studied and the

  8. Adjustable hydrazine modulation of single-wall carbon nanotube network field effect transistors from p-type to n-type

    NASA Astrophysics Data System (ADS)

    Dai, Ruixuan; Xie, Dan; Xu, Jianlong; Sun, Yilin; Sun, MengXing; Zhang, Cheng; Li, Xian

    2016-11-01

    Single-wall carbon nanotube (SWCNT) network field effect transistors (FETs), which show decent p-type electronic properties, have been fabricated. The use of hydrazine as an aqueous solution and a strong n-type dopant for the SWCNTs is demonstrated in this paper. The electrical properties are obviously tuned by hydrazine treatment at different concentrations on the surface of the SWCNT network FETs. The transport behavior of SWCNTs can be modulated from p-type to n-type, demonstrating the controllable and adjustable doping effect of hydrazine. With a higher concentration of hydrazine, more electrons can be transferred from the hydrazine molecules to the SWCNT network films, thus resulting in a change of threshold voltage, carrier mobility and on-current. By cleaning the device, the hydrazine doping effects vanish, which indicates that the doping effects of hydrazine are reversible. Through x-ray photoelectron spectroscopy (XPS) characterization, the doping effects of hydrazine have also been studied.

  9. Fast picomolar selective detection of bisphenol A in water using a carbon nanotube field effect transistor functionalized with estrogen receptor-alpha.

    PubMed

    Sánchez-Acevedo, Zayda C; Riu, Jordi; Rius, F Xavier

    2009-05-15

    In this paper we report a biosensor for the fast, ultrasensitive and selective determination of bisphenol A in water. It is based on a field effect transistor (FET) in which a network of single-walled carbon nanotubes (SWCNTs) acts as the conductor channel. SWCNTs are functionalized for the first time with a nuclear receptor, the estrogen receptor alpha (ER-alpha), which is adsorbed onto the SWCNTs and acts as the sensing part of the biosensor. SWCTNs are subsequently protected to prevent the non-specific binding of interferences. With this biosensor we can detect picomolar concentrations of BPA in only 2 min of analysis. Selectivity has been tested against possible interferences such as fluoranthene, pentacloronitrobenzene and malathion, and this is the first device that experimentally shows that small molecules can also be selectively detected at ultralow concentrations using a CNTFET biosensor.

  10. Network single-walled carbon nanotube-field effect transistors (SWNT-FETs) with increased Schottky contact area for highly sensitive biosensor applications.

    PubMed

    Byon, Hye Ryung; Choi, Hee Cheul

    2006-02-22

    Highly sensitive single-walled carbon nanotube-field effect transistor (SWNT-FET) devices, which detect protein adsorptions and specific protein-protein interactions at 1 pM concentrations, have been achieved. The detection limit has been improved 104-fold compared to the devices fabricated by photolithography. The substantially increased sensitivity is mainly due to the increased Schottky contact area which accommodates relatively more numbers of proteins even at very low concentration. The augmented number of proteins adsorbed on a device induces instant modulation of the work function of metal contact electrodes, which eventually changes the conductance of the device. Such devices have been attained by addressing metal electrodes on network-type SWNTs using a shadow mask on a tilted angle sample stage. The shadow mask allows metals to penetrate underneath the mask efficiently, therefore forming a thin and wide Schottky contact area on SWNT channels.

  11. Investigation of the performance and band-to-band tunneling effect of a new double-halo-doping carbon nanotube field-effect transistor

    NASA Astrophysics Data System (ADS)

    Arefinia, Zahra

    2009-10-01

    Carbon nanotube field-effect transistors (CNTFETs) can be fabricated with Ohmic- or Schottky-type contacts. We focus here on Ohmic CNTFETs. The CNTFETs suffer from band-to-band tunneling which in turn causes the ambipolar conduction. In this paper, to suppress the ambipolar behavior of CNTFETs and improve the performance of these devices, we have proposed application of symmetric double-halo (DH)-doping in CNTFETs. In this new structure, the source-side halo doping reduces the drain-induced barrier lowering (DIBL) and the drain-side halo reduces the band-to-band tunneling effect. Simulation results show in the DH-CNTFET, subthreshold swing below the 60 mV/decade conventional limit can be achieved. Also it decreases significantly the leakage current and drain conductance and increases on-off current ratio and voltage gain as compared to conventional CNTFET.

  12. Analysis of resonant detection of terahertz radiation in high-electron mobility transistor with a nanostring/carbon nanotube as the mechanically floating gate

    NASA Astrophysics Data System (ADS)

    Leiman, V. G.; Ryzhii, M.; Satou, A.; Ryabova, N.; Ryzhii, V.; Otsuji, T.; Shur, M. S.

    2008-07-01

    We develop a device model for a resonant detector of electromagnetic radiation with a frequency in the terahertz (THz) range modulated by megahertz (MHz) or gigahertz (GHz) signals based on a micromachined high-electron mobility transistor (HEMT) with a metallized nanostring (NS) or metallic carbon nanotube (CNT) as mechanically the floating gate and analyze the detector operation. The device model describes both the NS/CNT mechanical motion and plasma effects in the HEMT two-dimensional electron channel. Using this model, we calculate the output gate alternating current and the detector responsivity as functions of the carrier (in the THz range) and modulation frequencies, which are in the THz and MHz (or GHz range), respectively. It is shown that the THz detector responsivity exhibits sharp and high maxima under the conditions of both mechanical and plasma resonances.

  13. Carbon nanotube nanoelectrode arrays

    DOEpatents

    Ren, Zhifeng; Lin, Yuehe; Yantasee, Wassana; Liu, Guodong; Lu, Fang; Tu, Yi

    2008-11-18

    The present invention relates to microelectode arrays (MEAs), and more particularly to carbon nanotube nanoelectrode arrays (CNT-NEAs) for chemical and biological sensing, and methods of use. A nanoelectrode array includes a carbon nanotube material comprising an array of substantially linear carbon nanotubes each having a proximal end and a distal end, the proximal end of the carbon nanotubes are attached to a catalyst substrate material so as to form the array with a pre-determined site density, wherein the carbon nanotubes are aligned with respect to one another within the array; an electrically insulating layer on the surface of the carbon nanotube material, whereby the distal end of the carbon nanotubes extend beyond the electrically insulating layer; a second adhesive electrically insulating layer on the surface of the electrically insulating layer, whereby the distal end of the carbon nanotubes extend beyond the second adhesive electrically insulating layer; and a metal wire attached to the catalyst substrate material.

  14. Supported Lipid Bilayer/Carbon Nanotube Hybrids

    NASA Astrophysics Data System (ADS)

    Zhou, Xinjian; Moran-Mirabal, Jose; Craighead, Harold; McEuen, Paul

    2007-03-01

    We form supported lipid bilayers on single-walled carbon nanotubes and use this hybrid structure to probe the properties of lipid membranes and their functional constituents. We first demonstrate membrane continuity and lipid diffusion over the nanotube. A membrane-bound tetanus toxin protein, on the other hand, sees the nanotube as a diffusion barrier whose strength depends on the diameter of the nanotube. Finally, we present results on the electrical detection of specific binding of streptavidin to biotinylated lipids with nanotube field effect transistors. Possible techniques to extract dynamic information about the protein binding events will also be discussed.

  15. Effects of Ambient Air and Temperature on Ionic Gel Gated Single-Walled Carbon Nanotube Thin-Film Transistor and Circuits.

    PubMed

    Li, Huaping; Zhou, Lili

    2015-10-21

    Single-walled carbon nanotube thin-film transistor (SWCNT TFT) and circuits were fabricated by fully inkjet printing gold nanoparticles as source/drain electrodes, semiconducting SWCNT thin films as channel materials, PS-PMMA-PS/EMIM TFSI composite gel as gate dielectrics, and PEDOT/PSS as gate electrodes. The ionic gel gated SWCNT TFT shows reversible conversion from p-type transistor behavior in air to ambipolar features under vacuum due to reversible oxygen doping in semiconducting SWCNT thin films. The threshold voltages of ionic gel gated SWCNT TFT and inverters are largely shifted to the low value (0.5 V for p-region and 1.0 V for n-region) by vacuum annealing at 140 °C to exhausively remove water that is incorporated in the ionic gel as floating gates. The vacuum annealed ionic gel gated SWCNT TFT shows linear temperature dependent transconductances and threshold voltages for both p- and n-regions. The strong temperature dependent transconductances (0.08 μS/K for p-region, 0.4 μS/K for n-region) indicate their potential application in thermal sensors. In the other hand, the weak temperature dependent threshold voltages (-1.5 mV/K for p-region, -1.1 mV/K for n-region) reflect their excellent thermal stability.

  16. Simultaneous Improvement of Hole and Electron Injection in Organic Field-effect Transistors by Conjugated Polymer-wrapped Carbon Nanotube Interlayers

    PubMed Central

    Lee, Seung-Hoon; Khim, Dongyoon; Xu, Yong; Kim, Juhwan; Park, Won-Tae; Kim, Dong-Yu; Noh, Yong-Young

    2015-01-01

    Efficient charge injection is critical for flexible organic electronic devices such as organic light-emitting diodes (OLEDs) and field-effect transistors (OFETs). Here, we investigated conjugated polymer-wrapped semiconducting single-walled carbon nanotubes (s-SWNTs) as solution-processable charge-injection layers in ambipolar organic field-effect transistors with poly(thienylenevinylene-co-phthalimide)s. The interlayers were prepared using poly(9,9-di-n-octylfluorene-alt-benzothiadiazole) (F8BT) or poly(9,9-dioctylfluorene) (PFO) to wrap s-SWNTs. In the contact-limited ambipolar OFETs, the interlayer led to significantly lower contact resistance (Rc) and increased mobilities for both holes and electrons. The resulting PTVPhI-Eh OFETs with PFO-wrapped s-SWNT interlayers showed very well-balanced ambipolar transport properties with a hole mobility of 0.5 cm2V-1S-1 and an electron mobility of 0.5 cm2V-1S-1 in linear regime. In addition, the chirality of s-SWNTs and kind of wrapping of conjugated polymers are not critical to improving charge-injection properties. We found that the improvements caused by the interlayer were due to the better charge injection at the metal/organic semiconductor contact interface and the increase in the charge concentration through a detailed examination of charge transport with low-temperature measurements. Finally, we successfully demonstrated complementary ambipolar inverters incorporating the interlayers without excessive patterning. PMID:26001198

  17. Composite films of oxidized multiwall carbon nanotube and poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) as a contact electrode for transistor and inverter devices.

    PubMed

    Yun, Dong-Jin; Rhee, Shi-Woo

    2012-02-01

    Composite films of multiwall carbon nanotube (MWNT)/poly(3,4-ethylenedioxythiophene) polymerized with poly(4-styrenesulfonate) (PEDOT:PSS) were prepared by spin-coating a mixture solution. The effect of the MWNT loading and the MWNT oxidation, with acid solution or ultraviolet (UV)-ozone treatment, on the film properties such as surface roughness, work function, surface energy, optical transparency and conductivity were studied. Also pentacene thin film transistors and inverters were made with these composite films as a contact metal and the device characteristics were measured. The oxidation of MWNT reduced the conductivity of MWNT/PEDOT:PSS composite film but increased the work function and transparency. UV-ozone treated MWNT/PEDOT:PSS composite film showed higher conductivity (14000 Ω/□) and work function (4.9 eV) than acid-oxidized MWNT/PEDOT:PSS composite film and showed better performance as a source/drain electrode in organic thin film transistor (OTFT) than other types of MWNT/PEDOT:PSS composite films. Hole injection barrier of the UV-ozone treated MWNT/PEDOT:PSS composite film with pentacene was significantly lower than any other films because of the higher work function.

  18. Raman mapping investigation of single-walled carbon nanotube bending in bottom-contact field-effect-transistor devices

    NASA Astrophysics Data System (ADS)

    Setiadi, Agung; Akai-Kasaya, Megumi; Kuwahara, Yuji

    2016-09-01

    We investigated the bending of single-walled carbon nanotubes (SWNTs) in bottom-contact SWNT devices using Raman mapping measurements. The height difference between the metal electrodes and the substrate caused the SWNTs to bend, down-shifting the G+ and G- bands of the bent SWNTs. No shifting of the G+ and G- bands was observed when flat electrodes were used. Shifting of the G+ and G- bands in SWNTs is strongly correlated to modulation of the Fermi level. We confirmed this effect by measuring the transport properties of the SWNT devices, which were in good agreement with the Raman measurement results.

  19. Optoelectronics with Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Kinoshita, Megumi

    2011-12-01

    The carbon nanotube is a promising material for future micro- and nano-scale electronics because of its unique electronic properties, high carrier mobility and extraordinary capacity for high current density. In particular, semiconducting carbon nanotubes are direct bandgap materials with a typical energy gap in the order of 1 eV, which means they emit light in the near-infrared range, making them an attractive option in telecommunications applications. However, there have been few systematic investigations of electrically-induced light emission (i.e. electroluminescence) from carbon nanotubes, and their emission properties are not well understood. In this dissertation, we explore the characteristics of electroluminescence in three different types of carbon-nanotube devices. The first is a single-tube field-effect transistor (CNTFET), whose emission has previously been found to have a very broad spectral shape and low emission efficiency. We analyze the spectral shape in detail, which reveals that a high electric field near metal contacts contributes most to the bias-dependent component of broadening, in addition to smaller contributions from tube nonuniformity, inelastic scattering of phonons, high temperature, etc. In the second part of the study, single-tube light-emitting diodes are constructed by employing a split top-gate scheme. The split gate creates p- and n-doped regions electrostatically, so that electrons and holes combine between the two sections and can decay radiatively. This configuration creates electron-hole pairs under much lower electric fields and gives us a greater control over carrier distribution in the device channel, resulting in much narrower spectral linewidths and an emission intensity several orders of magnitude larger than that of CNTFETs. The much better signal-to-noise also leads to the observation of emission from defect-induced states. Finally, we extend the idea of the single-tube p-n diode and fabricate CNT film diodes from many

  20. Engineering carbon nanotubes and nanotube circuits using electrical breakdown.

    PubMed

    Collins, P G; Arnold, M S; Avouris, P

    2001-04-27

    Carbon nanotubes display either metallic or semiconducting properties. Both large, multiwalled nanotubes (MWNTs), with many concentric carbon shells, and bundles or "ropes" of aligned single-walled nanotubes (SWNTs), are complex composite conductors that incorporate many weakly coupled nanotubes that each have a different electronic structure. Here we demonstrate a simple and reliable method for selectively removing single carbon shells from MWNTs and SWNT ropes to tailor the properties of these composite nanotubes. We can remove shells of MWNTs stepwise and individually characterize the different shells. By choosing among the shells, we can convert a MWNT into either a metallic or a semiconducting conductor, as well as directly address the issue of multiple-shell transport. With SWNT ropes, similar selectivity allows us to generate entire arrays of nanoscale field-effect transistors based solely on the fraction of semiconducting SWNTs.

  1. Flexible CMOS-Like Circuits Based on Printed P-Type and N-Type Carbon Nanotube Thin-Film Transistors.

    PubMed

    Zhang, Xiang; Zhao, Jianwen; Dou, Junyan; Tange, Masayoshi; Xu, Weiwei; Mo, Lixin; Xie, Jianjun; Xu, Wenya; Ma, Changqi; Okazaki, Toshiya; Cui, Zheng

    2016-09-01

    P-type and n-type top-gate carbon nanotube thin-film transistors (TFTs) can be selectively and simultaneously fabricated on the same polyethylene terephthalate (PET) substrate by tuning the types of polymer-sorted semiconducting single-walled carbon nanotube (sc-SWCNT) inks, along with low temperature growth of HfO2 thin films as shared dielectric layers. Both the p-type and n-type TFTs show good electrical properties with on/off ratio of ≈10(5) , mobility of ≈15 cm(2) V(-1) s(-1) , and small hysteresis. Complementary metal oxide semiconductor (CMOS)-like logic gates and circuits based on as-prepared p-type and n-type TFTs have been achieved. Flexible CMOS-like inverters exhibit large noise margin of 84% at low voltage (1/2 Vdd = 1.5 V) and maximum voltage gain of 30 at Vdd of 1.5 V and low power consumption of 0.1 μW. Both of the noise margin and voltage gain are one of the best values reported for flexible CMOS-like inverters at Vdd less than 2 V. The printed CMOS-like inverters work well at 10 kHz with 2% voltage loss and delay time of ≈15 μs. A 3-stage ring oscillator has also been demonstrated on PET substrates and the oscillation frequency of 3.3 kHz at Vdd of 1 V is achieved.

  2. Functionalization of carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Korneva, Guzeliya

    Carbon nanotubes have unique properties that make them attractive for different engineering applications. However, because of their chemical inertness, carbon nanotubes have to be functionalized in order to acquire additional physico-chemical properties. Large multiwalled carbon nanotubes are different from fullerenes and singlewalled nanotubes because the stresses in their walls are almost relaxed while most chemical methods for fullerene functionalization exploit this effect of stressed bonds. The objective of this work is to develop new methods for functionalization of multiwalled carbon nanotubes. This work is dedicated to study two functionalization methods. The first deals with physico-chemical functionalization by filling the nanotube interior with colloidal suspensions. Irreversible adsorption of functional nanoparticles on the nanotube wall leads to the nanotube functionalization. The second method is purely chemical functionalization, which uses the reaction of cyclopropanation to break pi-bonds in the benzene rings of the nanotubes with formation of new σ-bonds with deprotonated malonate. This so-called Bingel reaction has been used in fullerene chemistry and in this work was applied for the first time to functionalize multiwalled carbon nanotubes. While capillary filling of carbon nanotubes was known long ago, the research community was skeptical about possibility of engulfing nanoparticles into nanotubes by capillary forces. We developed and implemented capillary method to fill nanotubes with different nanoparticles. Using this method, magnetic carbon nanotubes were produced for the first time. Synthesized nanotubes have very high magnetic moment and allow to manipulate them by magnetic field. These magnetic nanotubes have been successfully used in fabrication of carbon nanotube-tipped pipettes for biological probes. The Bingel reaction was studied on three sets of multiwalled carbon nanotubes with diameters: 20nm, 100nm, and 300nm. To estimate the

  3. Reinforced Carbon Nanotubes.

    DOEpatents

    Ren, Zhifen; Wen, Jian Guo; Lao, Jing Y.; Li, Wenzhi

    2005-06-28

    The present invention relates generally to reinforced carbon nanotubes, and more particularly to reinforced carbon nanotubes having a plurality of microparticulate carbide or oxide materials formed substantially on the surface of such reinforced carbon nanotubes composite materials. In particular, the present invention provides reinforced carbon nanotubes (CNTs) having a plurality of boron carbide nanolumps formed substantially on a surface of the reinforced CNTs that provide a reinforcing effect on CNTs, enabling their use as effective reinforcing fillers for matrix materials to give high-strength composites. The present invention also provides methods for producing such carbide reinforced CNTs.

  4. Effect of gate-dielectrics on the electrical characteristics of solution-processed single-wall-carbon-nanotube thin-film transistors

    NASA Astrophysics Data System (ADS)

    Ha, Tae-Jun

    2017-02-01

    High performance of solution-processed, single-wall-carbon-nanotube (SWCNT) thin-film transistors (TFTs) is investigated through the use in the different gate-dielectrics of silicon dioxide (SiO2), silicon nitride (SiNx), the bilayers of SiO2 and SiNx, and hexagonal boron-nitride (h-BN) thin films. The different interfacial characteristics affect the electrical characteristics of the SWCNT-TFTs including key device metrics. Significantly, the hysteresis window that is normally observed in drop-casted SWCNT-TFTs was majorly suppressed by the employment of a thin lower dielectric-constant material on a higher dielectricconstant material. Sub-2V operating SWCNT-TFTs with solution-processed h-BN gate dielectrics with good above- and sub-threshold characteristics are also investigated on the basis of interfacial characteristics underlying the device physics. Such performance can be realized by the suppressed interfacial impurity scattering through the chemically clean interface combined with optimized solution-process below 100 °C. [Figure not available: see fulltext.

  5. Electrical transport properties of single wall carbon nanotube/polyurethane composite based field effect transistors fabricated by UV-assisted direct-writing technology

    NASA Astrophysics Data System (ADS)

    Aïssa, B.; Therriault, D.; Farahani, R. D.; Lebel, L. L.; El Khakani, M. A.

    2012-03-01

    We report on the fabrication and transport properties of single-walled carbon nanotube (SWCNT)/polyurethane (PU) nanocomposite microfiber-based field effect transistors (FETs). UV-assisted direct-writing technology was used, and microfibers consisting of cylindrical micro-rods, having different diameters and various SWCNT loads, were fabricated directly onto SiO2/Si substrates in a FET scheme. The room temperature dc electrical conductivities of these microfibers were shown to increase with respect to the SWCNT concentrations in the nanocomposite, and were about ten orders of magnitude higher than that of the pure polyurethane, when the SWCNT load ranged from 0.1 to 2.5 wt% only. Our results show that for SWCNT loads ≤ 1.5 wt%, all the microfibers behave as a FET with p-type transport. The resulting FET exhibited excellent performance, with an Ion/Ioff ratio of 105 and a maximum on-state current (Ion) exceeding 70 µA. Correlations between the FET performance, SWCNTs concentration, and the microfiber diameters are also discussed.

  6. Electrical transport properties of single wall carbon nanotube/polyurethane composite based field effect transistors fabricated by UV-assisted direct-writing technology.

    PubMed

    Aïssa, B; Therriault, D; Farahani, R D; Lebel, L L; El Khakani, M A

    2012-03-23

    We report on the fabrication and transport properties of single-walled carbon nanotube (SWCNT)/polyurethane (PU) nanocomposite microfiber-based field effect transistors (FETs). UV-assisted direct-writing technology was used, and microfibers consisting of cylindrical micro-rods, having different diameters and various SWCNT loads, were fabricated directly onto SiO₂/Si substrates in a FET scheme. The room temperature dc electrical conductivities of these microfibers were shown to increase with respect to the SWCNT concentrations in the nanocomposite, and were about ten orders of magnitude higher than that of the pure polyurethane, when the SWCNT load ranged from 0.1 to 2.5 wt% only. Our results show that for SWCNT loads ≤ 1.5 wt%, all the microfibers behave as a FET with p-type transport. The resulting FET exhibited excellent performance, with an I(on)/I(off) ratio of 10⁵ and a maximum on-state current (I(on)) exceeding 70 µA. Correlations between the FET performance, SWCNTs concentration, and the microfiber diameters are also discussed.

  7. Multiwall carbon nanotube and poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) composite films for transistor and inverter devices.

    PubMed

    Yun, Dong-Jin; Hong, KiPyo; Kim, Se hyun; Yun, Won-Min; Jang, Jae-young; Kwon, Woo-Sung; Park, Chan-Eon; Rhee, Shi-Woo

    2011-01-01

    Highly conductive multiwalled carbon nanotube (MWNT)/Poly(3,4-ethylenedioxythiophene) polymerized with poly(4-styrenesulfonate) (PEDOT:PSS) films were prepared by spin coating a mixture solution. The solution was prepared by dispersing MWNT in the PEDOT:PSS solution in water using ultrasonication without any oxidation process. The effect of the MWNT loading in the solution on the film properties such as surface roughness, work function, surface energy, optical transparency, and conductivity was studied. The conductivity of MWNT/PEDOT:PSS composite film was increased with higher MWNT loading and the high conductivity of MWNT/PEDOT:PSS films enabled them to be used as a source/drain electrode in organic thin film transistor (OTFT). The pentacene TFT with MWNT/PEDOT:PSS S/D electrode showed much higher performance with mobility about 0.2 cm²/(V s) and on/off ratio about 5 × 10⁵ compared to that with PEDOT:PSS S/D electrode (∼0.05 cm²/(V s), 1 × 10⁵). The complementary inverters exhibited excellent characteristics, including high gain value of about 30.

  8. Scalability of carbon-nanotube-based thin film transistors for flexible electronic devices manufactured using an all roll-to-roll gravure printing system

    PubMed Central

    Koo, Hyunmo; Lee, Wookyu; Choi, Younchang; Sun, Junfeng; Bak, Jina; Noh, Jinsoo; Subramanian, Vivek; Azuma, Yasuo; Majima, Yutaka; Cho, Gyoujin

    2015-01-01

    To demonstrate that roll-to-roll (R2R) gravure printing is a suitable advanced manufacturing method for flexible thin film transistor (TFT)-based electronic circuits, three different nanomaterial-based inks (silver nanoparticles, BaTiO3 nanoparticles and single-walled carbon nanotubes (SWNTs)) were selected and optimized to enable the realization of fully printed SWNT-based TFTs (SWNT-TFTs) on 150-m-long rolls of 0.25-m-wide poly(ethylene terephthalate) (PET). SWNT-TFTs with 5 different channel lengths, namely, 30, 80, 130, 180, and 230 μm, were fabricated using a printing speed of 8 m/min. These SWNT-TFTs were characterized, and the obtained electrical parameters were related to major mechanical factors such as web tension, registration accuracy, impression roll pressure and printing speed to determine whether these mechanical factors were the sources of the observed device-to-device variations. By utilizing the electrical parameters from the SWNT-TFTs, a Monte Carlo simulation for a 1-bit adder circuit, as a reference, was conducted to demonstrate that functional circuits with reasonable complexity can indeed be manufactured using R2R gravure printing. The simulation results suggest that circuits with complexity, similar to the full adder circuit, can be printed with a 76% circuit yield if threshold voltage (Vth) variations of less than 30% can be maintained. PMID:26411839

  9. Low mass MEMS/NEMS switch for a substitute of CMOS transistor using single-walled carbon nanotube thin film

    NASA Astrophysics Data System (ADS)

    Jang, Min-Woo

    Power dissipation is a key factor for mobile devices and other low power applications. Complementary metal oxide semiconductor (CMOS) is the dominant integrated circuit (IC) technology responsible for a large part of this power dissipation. As the minimum feature size of CMOS devices enters into the sub 50 nanometer (nm) regime, power dissipation becomes much worse due to intrinsic physical limits. Many approaches have been studied to reduce power dissipation of deeply scaled CMOS ICs. One possible candidate is the electrostatic electromechanical switch, which could be fabricated with conventional CMOS processing techniques. They have critical advantages compared to CMOS devices such as almost zero standby leakage in the off-state due to the absence of a pn junction and a gate oxide, as well as excellent drive current in the on-state due to a metallic channel. Despite their excellent standby power dissipation, the electrostatic MEMS/NEMS switches have not been considered as a viable replacement for CMOS devices due to their large mechanical delay. Moreover, previous literature reveals that their pull-in voltage and switching speed are strongly proportional to each other. This reduces their potential advantage. However, in this work, we theoretically and experimentally demonstrated that the use of single-walled carbon nanotube (SWNT) with very low mass density and strong mechanical properties could provide a route to move off of the conventional trend with respect to the pull-in voltage / switching speed tradeoff observed in the literature. We fabricated 2-terminal fixed- beam switches with aligned composite SWNT thin films. In this work, layer-by-layer (LbL) self-assembly and dielectrophoresis were selected for aligned-composite SWNT thin film deposition. The dense membranes were successfully patterned to form submicron beams by e-beam lithography and oxygen plasma etching. Fixed-fixed beam switches using these membranes successfully operated with approximately 600

  10. Air-stable conversion of separated carbon nanotube thin-film transistors from p-type to n-type using atomic layer deposition of high-κ oxide and its application in CMOS logic circuits.

    PubMed

    Zhang, Jialu; Wang, Chuan; Fu, Yue; Che, Yuchi; Zhou, Chongwu

    2011-04-26

    Due to extraordinary electrical properties, preseparated, high purity semiconducting carbon nanotubes hold great potential for thin-film transistors (TFTs) and integrated circuit applications. One of the main challenges it still faces is the fabrication of air-stable n-type nanotube TFTs with industry-compatible techniques. Here in this paper, we report a novel and highly reliable method of converting the as-made p-type TFTs using preseparated semiconducting nanotubes into air-stable n-type transistors by adding a high-κ oxide passivation layer using atomic layer deposition (ALD). The n-type devices exhibit symmetric electrical performance compared with the p-type devices in terms of on-current, on/off ratio, and device mobility. Various factors affecting the conversion process, including ALD temperature, metal contact material, and channel length, have also been systematically studied by a series of designed experiments. A complementary metal-oxide-semiconductor (CMOS) inverter with rail-to-rail output, symmetric input/output behavior, and large noise margin has been further demonstrated. The excellent performance gives us the feasibility of cascading multiple stages of logic blocks and larger scale integration. Our approach can serve as the critical foundation for future nanotube-based thin-film macroelectronics.

  11. Intrinsically stretchable and transparent thin-film transistors based on printable silver nanowires, carbon nanotubes and an elastomeric dielectric

    PubMed Central

    Liang, Jiajie; Li, Lu; Chen, Dustin; Hajagos, Tibor; Ren, Zhi; Chou, Shu-Yu; Hu, Wei; Pei, Qibing

    2015-01-01

    Thin-film field-effect transistor is a fundamental component behind various mordern electronics. The development of stretchable electronics poses fundamental challenges in developing new electronic materials for stretchable thin-film transistors that are mechanically compliant and solution processable. Here we report the fabrication of transparent thin-film transistors that behave like an elastomer film. The entire fabrication is carried out by solution-based techniques, and the resulting devices exhibit a mobility of ∼30 cm2 V−1 s−1, on/off ratio of 103–104, switching current >100 μA, transconductance >50 μS and relative low operating voltages. The devices can be stretched by up to 50% strain and subjected to 500 cycles of repeated stretching to 20% strain without significant loss in electrical property. The thin-film transistors are also used to drive organic light-emitting diodes. The approach and results represent an important progress toward the development of stretchable active-matrix displays. PMID:26173436

  12. Intrinsically stretchable and transparent thin-film transistors based on printable silver nanowires, carbon nanotubes and an elastomeric dielectric.

    PubMed

    Liang, Jiajie; Li, Lu; Chen, Dustin; Hajagos, Tibor; Ren, Zhi; Chou, Shu-Yu; Hu, Wei; Pei, Qibing

    2015-07-15

    Thin-film field-effect transistor is a fundamental component behind various mordern electronics. The development of stretchable electronics poses fundamental challenges in developing new electronic materials for stretchable thin-film transistors that are mechanically compliant and solution processable. Here we report the fabrication of transparent thin-film transistors that behave like an elastomer film. The entire fabrication is carried out by solution-based techniques, and the resulting devices exhibit a mobility of ∼30 cm(2) V(-1) s(-1), on/off ratio of 10(3)-10(4), switching current >100 μA, transconductance >50 μS and relative low operating voltages. The devices can be stretched by up to 50% strain and subjected to 500 cycles of repeated stretching to 20% strain without significant loss in electrical property. The thin-film transistors are also used to drive organic light-emitting diodes. The approach and results represent an important progress toward the development of stretchable active-matrix displays.

  13. Nanomechanics of carbon nanotubes.

    PubMed

    Kis, Andras; Zettl, Alex

    2008-05-13

    Some of the most important potential applications of carbon nanotubes are related to their mechanical properties. Stiff sp2 bonds result in a Young's modulus close to that of diamond, while the relatively weak van der Waals interaction between the graphitic shells acts as a form of lubrication. Previous characterization of the mechanical properties of nanotubes includes a rich variety of experiments involving mechanical deformation of nanotubes using scanning probe microscopes. These results have led to promising prototypes of nanoelectromechanical devices such as high-performance nanomotors, switches and oscillators based on carbon nanotubes.

  14. Hemotoxicity of carbon nanotubes.

    PubMed

    Bussy, Cyrill; Methven, Laura; Kostarelos, Kostas

    2013-12-01

    Carbon nanotubes may enter into the bloodstream and interact with blood components indirectly via translocation following unintended exposure or directly after an intended administration for biomedical purposes. Once introduced into systemic circulation, nanotubes will encounter various proteins, biomolecules or cells which have specific roles in the homeostasis of the circulatory system. It is therefore essential to determine whether those interactions will lead to adverse effects or not. Advances in the understanding of how carbon nanotubes interact with blood proteins, the complement system, red blood cells and the hemostatic system are reviewed in this article. While many studies on carbon nanotube health risk assessment and their biomedical applications have appeared in the last few years, reports on the hemocompatibility of these nanomaterials remain surprisingly limited. Yet, defining the hemotoxicological profile is a mandatory step toward the development of clinically-relevant medications or contrast agents based on carbon nanotubes.

  15. A Tunable Carbon Nanotube Oscillator

    NASA Astrophysics Data System (ADS)

    Sazonova, Vera

    2005-03-01

    Nanoelectromechanical systems (NEMS) hold promise for a number of scientific and technological applications. Carbon nanotubes (NT) are perhaps the ultimate material for realizing a NEMS device as they are the stiffest material known, have low density, ultrasmall cross sections and can be defect-free. Equally important, a nanotube can act as a transistor and thus is able to sense its own motion. Here, we report the electrical actuation and detection of the guitar-string oscillation modes of doubly-clamped NT oscillators. We observed resonance frequencies in the 5MHz to 150MHz range with quality factors in the 50 to 100 range. We showed that the resonance frequencies can be widely tuned by a gate voltage. We also report on the temperature dependence of the quality factor and present a discussion of possible loss mechanisms.

  16. Effect of surface wettability properties on the electrical properties of printed carbon nanotube thin-film transistors on SiO2/Si substrates.

    PubMed

    Liu, Zhen; Zhao, Jianwen; Xu, Wenya; Qian, Long; Nie, Shuhong; Cui, Zheng

    2014-07-09

    The precise placement and efficient deposition of semiconducting single-walled carbon nanotubes (sc-SWCNTs) on substrates are challenges for achieving printed high-performance SWCNT thin-film transistors (TFTs) with independent gates. It was found that the wettability of the substrate played a key role in the electrical properties of TFTs for sc-SWCNTs sorted by poly[(9,9-dioctylfluorene-2,7-diyl)-co-(1,4-benzo-2,1,3-thiadiazole)] (PFO-BT). In the present work we report a simple and scalable method which can rapidly and selectively deposit a high concentration of sc-SWCNTs in TFT channels by aerosol-jet-printing. The method is based on oxygen plasma treatment of substrates, which tunes the surface wettability. TFTs printed on the treated substrates demonstrated a low operation voltage, small hysteresis, high mobility up to 32.3 cm(2) V(-1) s(-1), and high on/off ratio up to 10(6) after only two printings. Their mobilities were 10 and 30 times higher than those of TFTs fabricated on untreated and low-wettability substrates. The uniformity of printed TFTs was also greatly improved. Inverters were constructed by printed top-gate TFTs, and a maximum voltage gain of 17 at Vdd = 5 V was achieved. The mechanism of such improvements is that the PFO-BT-functionalized sc-SWCNTs are preferably immobilized on the oxygen plasma treated substrates due to the strong hydrogen bonds between sc-SWCNTs and hydroxyl groups on the substrates.

  17. Investigation of light doping and hetero gate dielectric carbon nanotube tunneling field-effect transistor for improved device and circuit-level performance

    NASA Astrophysics Data System (ADS)

    Wang, Wei; Sun, Yuan; Wang, Huan; Xu, Hongsong; Xu, Min; Jiang, Sitao; Yue, Gongshu

    2016-03-01

    We perform a comparative study (both for device and circuit simulations) of three carbon nanotube tunneling field-effect transistor (CNT-TFET) designs: high-K gate dielectric TFETs (HK-TFETs), hetero gate dielectric TFETs (HTFETs) and a novel CNT-TFET-based combination of light doping and hetero gate dielectric TFETs (LD-HTFETs). At device level, the effects of channel and gate dielectric engineering on the switching and high-frequency characteristics for CNT-TFET have been theoretically investigated using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green’s functions solved self-consistently with Poisson’s equations. It is revealed that the proposed LD-HTFET structure can significantly reduce leakage current, enhance control ability of the gate on the channel, improve the switching speed, and is more suitable for use in low-power, high-frequency circuits. At circuit level, using HSPICE with look-up table-based Verilog-A models, the performance and reliability of CNT-TFET logic gate circuits is evaluated on the basis of power consumption, average delay, stability, energy consumption and power-delay product (PDP). Simulation results indicate that, compared to a traditional CNT-TFET-based circuit, the one based on LD-HTFET has a significantly better performance (static noise margin, energy, delay, PDP). It is also observed that our proposed design exhibits better robustness under different operational conditions by considering power supply voltage and temperature variations. Our results may be useful for designing and optimizing CNTFET devices and circuits.

  18. Transport in Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Datta, S.; Xue, Yong-Qinag; Anantram, M. P.; Saini, Subhash (Technical Monitor)

    1999-01-01

    This presentation discusses coupling between carbon nanotubes (CNT), simple metals (FEG) and a graphene sheet. The graphene sheet did not couple well with FEG, but the combination of a graphene strip and CNT did couple well with most simple metals.

  19. Carbon nanotubes: Fibrillar pharmacology

    NASA Astrophysics Data System (ADS)

    Kostarelos, Kostas

    2010-10-01

    The mechanisms by which chemically functionalized carbon nanotubes flow in blood and are excreted through the kidneys illustrate the unconventional behaviour of these fibrillar nanostructures, and the opportunities they offer as components for the design of advanced delivery vehicles.

  20. Carbon nanotube solar cells.

    PubMed

    Klinger, Colin; Patel, Yogeshwari; Postma, Henk W Ch

    2012-01-01

    We present proof-of-concept all-carbon solar cells. They are made of a photoactive side of predominantly semiconducting nanotubes for photoconversion and a counter electrode made of a natural mixture of carbon nanotubes or graphite, connected by a liquid electrolyte through a redox reaction. The cells do not require rare source materials such as In or Pt, nor high-grade semiconductor processing equipment, do not rely on dye for photoconversion and therefore do not bleach, and are easy to fabricate using a spray-paint technique. We observe that cells with a lower concentration of carbon nanotubes on the active semiconducting electrode perform better than cells with a higher concentration of nanotubes. This effect is contrary to the expectation that a larger number of nanotubes would lead to more photoconversion and therefore more power generation. We attribute this to the presence of metallic nanotubes that provide a short for photo-excited electrons, bypassing the load. We demonstrate optimization strategies that improve cell efficiency by orders of magnitude. Once it is possible to make semiconducting-only carbon nanotube films, that may provide the greatest efficiency improvement.

  1. Inkjet Printing of Carbon Nanotubes

    PubMed Central

    Tortorich, Ryan P.; Choi, Jin-Woo

    2013-01-01

    In an attempt to give a brief introduction to carbon nanotube inkjet printing, this review paper discusses the issues that come along with preparing and printing carbon nanotube ink. Carbon nanotube inkjet printing is relatively new, but it has great potential for broad applications in flexible and printable electronics, transparent electrodes, electronic sensors, and so on due to its low cost and the extraordinary properties of carbon nanotubes. In addition to the formulation of carbon nanotube ink and its printing technologies, recent progress and achievements of carbon nanotube inkjet printing are reviewed in detail with brief discussion on the future outlook of the technology.

  2. Vertical Alignment of Single-Walled Carbon Nanotubes on Nanostructure Fabricated by Atomic Force Microscope

    DTIC Science & Technology

    2009-12-16

    Kobayashi Y, Yamashita T, Ueno Y, Niwa O, Homma Y, Ogino T. Extremely intense Raman signals from single-walled carbon nanotubes suspended between Si...carbon nanotube field effect transistors with carbon nanotube electrodes. Appl Phys Lett. 2008;92(4):043110-3. [13] Jung YJ, Homma Y, Ogino T...Homma Y, Yamashita T, Kobayashi Y, Ogino T. Interconnection of nanostructures using carbon nanotubes. Physica B. 2002;323(1-4):122-3. [23] Searson

  3. Automated circuit fabrication and direct characterization of carbon nanotube vibrations

    PubMed Central

    Zeevi, G.; Shlafman, M.; Tabachnik, T.; Rogachevsky, Z.; Rechnitz, S.; Goldshtein, I.; Shlafman, S.; Gordon, N.; Alchanati, G.; Itzhak, M.; Moshe, Y.; Hajaj, E. M.; Nir, H.; Milyutin, Y.; Izraeli, T. Y.; Razin, A.; Shtempluck, O.; Kotchtakov, V.; Yaish, Y. E.

    2016-01-01

    Since their discovery, carbon nanotubes have fascinated many researchers due to their unprecedented properties. However, a major drawback in utilizing carbon nanotubes for practical applications is the difficulty in positioning or growing them at specific locations. Here we present a simple, rapid, non-invasive and scalable technique that enables optical imaging of carbon nanotubes. The carbon nanotube scaffold serves as a seed for nucleation and growth of small size, optically visible nanocrystals. After imaging the molecules can be removed completely, leaving the surface intact, and thus the carbon nanotube electrical and mechanical properties are preserved. The successful and robust optical imaging allowed us to develop a dedicated image processing algorithm through which we are able to demonstrate a fully automated circuit design resulting in field effect transistors and inverters. Moreover, we demonstrate that this imaging method allows not only to locate carbon nanotubes but also, as in the case of suspended ones, to study their dynamic mechanical motion. PMID:27396506

  4. Carbon Nanotube Flexible and Stretchable Electronics

    NASA Astrophysics Data System (ADS)

    Cai, Le; Wang, Chuan

    2015-08-01

    The low-cost and large-area manufacturing of flexible and stretchable electronics using printing processes could radically change people's perspectives on electronics and substantially expand the spectrum of potential applications. Examples range from personalized wearable electronics to large-area smart wallpapers and from interactive bio-inspired robots to implantable health/medical apparatus. Owing to its one-dimensional structure and superior electrical property, carbon nanotube is one of the most promising material platforms for flexible and stretchable electronics. Here in this paper, we review the recent progress in this field. Applications of single-wall carbon nanotube networks as channel semiconductor in flexible thin-film transistors and integrated circuits, as stretchable conductors in various sensors, and as channel material in stretchable transistors will be discussed. Lastly, state-of-the-art advancement on printing process, which is ideal for large-scale fabrication of flexible and stretchable electronics, will also be reviewed in detail.

  5. Carbon Nanotube Flexible and Stretchable Electronics.

    PubMed

    Cai, Le; Wang, Chuan

    2015-12-01

    The low-cost and large-area manufacturing of flexible and stretchable electronics using printing processes could radically change people's perspectives on electronics and substantially expand the spectrum of potential applications. Examples range from personalized wearable electronics to large-area smart wallpapers and from interactive bio-inspired robots to implantable health/medical apparatus. Owing to its one-dimensional structure and superior electrical property, carbon nanotube is one of the most promising material platforms for flexible and stretchable electronics. Here in this paper, we review the recent progress in this field. Applications of single-wall carbon nanotube networks as channel semiconductor in flexible thin-film transistors and integrated circuits, as stretchable conductors in various sensors, and as channel material in stretchable transistors will be discussed. Lastly, state-of-the-art advancement on printing process, which is ideal for large-scale fabrication of flexible and stretchable electronics, will also be reviewed in detail.

  6. Templated Growth of Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Siochik Emilie J. (Inventor)

    2007-01-01

    A method of growing carbon nanotubes uses a synthesized mesoporous si lica template with approximately cylindrical pores being formed there in. The surfaces of the pores are coated with a carbon nanotube precu rsor, and the template with the surfaces of the pores so-coated is th en heated until the carbon nanotube precursor in each pore is convert ed to a carbon nanotube.

  7. Carbon nanotube array based sensor

    DOEpatents

    Lee, Christopher L.; Noy, Aleksandr; Swierkowski, Stephan P.; Fisher, Karl A.; Woods, Bruce W.

    2005-09-20

    A sensor system comprising a first electrode with an array of carbon nanotubes and a second electrode. The first electrode with an array of carbon nanotubes and the second electrode are positioned to produce an air gap between the first electrode with an array of carbon nanotubes and the second electrode. A measuring device is provided for sensing changes in electrical capacitance between the first electrode with an array of carbon nanotubes and the second electrode.

  8. Electrical properties and applications of carbon nanotube structures.

    PubMed

    Bandaru, Prabhakar R

    2007-01-01

    The experimentally verified electrical properties of carbon nanotube structures and manifestations in related phenomena such as thermoelectricity, superconductivity, electroluminescence, and photoconductivity are reviewed. The possibility of using naturally formed complex nanotube morphologies, such as Y-junctions, for new device architectures are then considered. Technological applications of the electrical properties of nanotube derived structures in transistor applications, high frequency nanoelectronics, field emission, and biological sensing are then outlined. The review concludes with an outlook on the technological potential of nanotubes and the need for new device architectures for nanotube systems integration.

  9. Selective Conversion from p-Type to n-Type of Printed Bottom-Gate Carbon Nanotube Thin-Film Transistors and Application in Complementary Metal-Oxide-Semiconductor Inverters.

    PubMed

    Xu, Qiqi; Zhao, Jianwen; Pecunia, Vincenzo; Xu, Wenya; Zhou, Chunshan; Dou, Junyan; Gu, Weibing; Lin, Jian; Mo, Lixin; Zhao, Yanfei; Cui, Zheng

    2017-04-12

    The fabrication of printed high-performance and environmentally stable n-type single-walled carbon nanotube (SWCNT) transistors and their integration into complementary (i.e., complementary metal-oxide-semiconductor, CMOS) circuits are widely recognized as key to achieving the full potential of carbon nanotube electronics. Here, we report a simple, efficient, and robust method to convert the polarity of SWCNT thin-film transistors (TFTs) using cheap and readily available ethanolamine as an electron doping agent. Printed p-type bottom-gate SWCNT TFTs can be selectively converted into n-type by deposition of ethanolamine inks on the transistor active region via aerosol jet printing. Resulted n-type TFTs show excellent electrical properties with an on/off ratio of 10(6), effective mobility up to 30 cm(2) V(-1) s(-1), small hysteresis, and small subthreshold swing (90-140 mV dec(-1)), which are superior compared to the original p-type SWCNT devices. The n-type SWCNT TFTs also show good stability in air, and any deterioration of performance due to shelf storage can be fully recovered by a short low-temperature annealing. The easy polarity conversion process allows construction of CMOS circuitry. As an example, CMOS inverters were fabricated using printed p-type and n-type TFTs and exhibited a large noise margin (50 and 103% of 1/2 Vdd = 1 V) and a voltage gain as high as 30 (at Vdd = 1 V). Additionally, the CMOS inverters show full rail-to-rail output voltage swing and low power dissipation (0.1 μW at Vdd = 1 V). The new method paves the way to construct fully functional complex CMOS circuitry by printed TFTs.

  10. A tunable carbon nanotube electromechanical oscillator

    NASA Astrophysics Data System (ADS)

    Sazonova, Vera; Yaish, Yuval; Üstünel, Hande; Roundy, David; Arias, Tomás A.; McEuen, Paul L.

    2004-09-01

    Nanoelectromechanical systems (NEMS) hold promise for a number of scientific and technological applications. In particular, NEMS oscillators have been proposed for use in ultrasensitive mass detection, radio-frequency signal processing, and as a model system for exploring quantum phenomena in macroscopic systems. Perhaps the ultimate material for these applications is a carbon nanotube. They are the stiffest material known, have low density, ultrasmall cross-sections and can be defect-free. Equally important, a nanotube can act as a transistor and thus may be able to sense its own motion. In spite of this great promise, a room-temperature, self-detecting nanotube oscillator has not been realized, although some progress has been made. Here we report the electrical actuation and detection of the guitar-string-like oscillation modes of doubly clamped nanotube oscillators. We show that the resonance frequency can be widely tuned and that the devices can be used to transduce very small forces.

  11. Carbon nanotube based pressure sensor for flexible electronics

    SciTech Connect

    So, Hye-Mi; Sim, Jin Woo; Kwon, Jinhyeong; Yun, Jongju; Baik, Seunghyun; Chang, Won Seok

    2013-12-15

    Highlights: • The electromechanical change of vertically aligned carbon nanotubes. • Fabrication of CNT field-effect transistor on flexible substrate. • CNT based FET integrated active pressure sensor. • The integrated device yields an increase in the source-drain current under pressure. - Abstract: A pressure sensor was developed based on an arrangement of vertically aligned carbon nanotubes (VACNTs) supported by a polydimethylsiloxane (PDMS) matrix. The VACNTs embedded in the PDMS matrix were structurally flexible and provided repeated sensing operation due to the high elasticities of both the polymer and the carbon nanotubes (CNTs). The conductance increased in the presence of a loading pressure, which compressed the material and induced contact between neighboring CNTs, thereby producing a dense current path and better CNT/metal contacts. To achieve flexible functional electronics, VACNTs based pressure sensor was integrated with field-effect transistor, which is fabricated using sprayed semiconducting carbon nanotubes on plastic substrate.

  12. Sorting Carbon Nanotubes.

    PubMed

    Zheng, Ming

    2017-02-01

    Sorting of single-wall carbon nanotubes by their electronic and atomic structures in liquid phases is reviewed in this chapter. We first introduce the sorting problem, and then provide an overview of several sorting methodologies, following roughly the chronological order of their development over the past 15 years or so. Major methods discussed include ion-exchange chromatography, density-gradient ultracentrifugation, selective extraction in organic solvents, gel chromatography, and aqueous two-phase extraction. A main focus of the review is on the common mechanisms underlining all sorting processes. We propose that differences in solvation among different nanotube species are the ultimate driving force of sorting, and we corroborate this proposal by presenting analysis on how the differences are realized in electronic-structure-based sorting and atomic-structure-based sorting. In the end, we offer some suggestions on future directions that may grow out of carbon nanotube sorting. In particular, the prospect of expanding the function of DNA/carbon nanotube hybrid to control inter-particle interactions both inside and outside the nanotube is discussed.

  13. Different Technical Applications of Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Abdalla, S.; Al-Marzouki, F.; Al-Ghamdi, Ahmed A.; Abdel-Daiem, A.

    2015-09-01

    Carbon nanotubes have been of great interest because of their simplicity and ease of synthesis. The novel properties of nanostructured carbon nanotubes such as high surface area, good stiffness, and resilience have been explored in many engineering applications. Research on carbon nanotubes have shown the application in the field of energy storage, hydrogen storage, electrochemical supercapacitor, field-emitting devices, transistors, nanoprobes and sensors, composite material, templates, etc. For commercial applications, large quantities and high purity of carbon nanotubes are needed. Different types of carbon nanotubes can be synthesized in various ways. The most common techniques currently practiced are arc discharge, laser ablation, and chemical vapor deposition and flame synthesis. The purification of CNTs is carried out using various techniques mainly oxidation, acid treatment, annealing, sonication, filtering chemical functionalization, etc. However, high-purity purification techniques still have to be developed. Real applications are still under development. This paper addresses the current research on the challenges that are associated with synthesis methods, purification methods, and dispersion and toxicity of CNTs within the scope of different engineering applications, energy, and environmental impact.

  14. Different Technical Applications of Carbon Nanotubes.

    PubMed

    Abdalla, S; Al-Marzouki, F; Al-Ghamdi, Ahmed A; Abdel-Daiem, A

    2015-12-01

    Carbon nanotubes have been of great interest because of their simplicity and ease of synthesis. The novel properties of nanostructured carbon nanotubes such as high surface area, good stiffness, and resilience have been explored in many engineering applications. Research on carbon nanotubes have shown the application in the field of energy storage, hydrogen storage, electrochemical supercapacitor, field-emitting devices, transistors, nanoprobes and sensors, composite material, templates, etc. For commercial applications, large quantities and high purity of carbon nanotubes are needed. Different types of carbon nanotubes can be synthesized in various ways. The most common techniques currently practiced are arc discharge, laser ablation, and chemical vapor deposition and flame synthesis. The purification of CNTs is carried out using various techniques mainly oxidation, acid treatment, annealing, sonication, filtering chemical functionalization, etc. However, high-purity purification techniques still have to be developed. Real applications are still under development. This paper addresses the current research on the challenges that are associated with synthesis methods, purification methods, and dispersion and toxicity of CNTs within the scope of different engineering applications, energy, and environmental impact.

  15. A carbon nanotube immunosensor for Salmonella

    NASA Astrophysics Data System (ADS)

    Lerner, Mitchell B.; Goldsmith, Brett R.; McMillon, Ronald; Dailey, Jennifer; Pillai, Shreekumar; Singh, Shree R.; Johnson, A. T. Charlie

    2011-12-01

    Antibody-functionalized carbon nanotube devices have been suggested for use as bacterial detectors for monitoring of food purity in transit from the farm to the kitchen. Here we report progress towards that goal by demonstrating specific detection of Salmonella in complex nutrient broth solutions using nanotube transistors functionalized with covalently-bound anti-Salmonella antibodies. The small size of the active device region makes them compatible with integration in large-scale arrays. We find that the on-state current of the transistor is sensitive specifically to the Salmonella concentration and saturates at low concentration (<1000 cfu/ml). In contrast, the carrier mobility is affected comparably by Salmonella and other bacteria types, with no sign of saturation even at much larger concentrations (108 cfu/ml).

  16. Copper-philic carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Belgamwar, Sachin U.; Sharma, Niti Nipun

    2016-04-01

    Carbon nanotube is having poor wet-ability with copper metal. Wet-ability of carbon nanotube was improved by exposing and creating more active sites on the surface of carbon nanotube. Carbon nanotubes were subjected to the prolong ultrasonication treatment of 20×103 Hz and 500W, which helped in disentanglement of carbon nanotube agglomerates and in breaking the weak bonds like pentagonal or heptagonal structure on the surface and on the CNT cap. Disentanglement of the carbon nanotube, resulted in exposing the defective sites on the surface and breaking of weak bonds, which assisted in creating the new defects on the surface. This process results in generates more active sites on the surface and it helps in improving the wet-ability of the carbon nanotube in copper.

  17. Electrically excited, localized infrared emission from single carbon nanotubes.

    PubMed

    Freitag, Marcus; Tsang, James C; Kirtley, John; Carlsen, Autumn; Chen, Jia; Troeman, Aico; Hilgenkamp, Hans; Avouris, Phaedon

    2006-07-01

    Carbon nanotube field-effect transistors (CNTFETs) produce band gap derived infrared emission under both ambipolar and unipolar transport conditions. We demonstrate here that heterogeneities/defects in the local environment of a CNTFET perturb the local potentials and, as a result, the characteristic bias dependent motion of the ambipolar light emission. Such defects can also introduce localized infrared emission due to impact excitation by carriers accelerated by a voltage drop at the defect. The correlation of the change in the motion of the ambipolarlight emission and of the stationary electroluminescence with the electrical characteristics of the CNTFETs shows that stationaryelectroluminescence can identify "environmental defects" in carbon nanotubes and help evaluate their influence on electrical transport and device operation. A number of different defects are studied involving local dielectric environment changes (partially polymer-covered nanotubes), nanotube-nanotube contacts in looped nanotubes, and nanotube segments close to the electronic contacts. Random defects due to local charging are also observed.

  18. Transport Through Carbon Nanotube Wires

    NASA Technical Reports Server (NTRS)

    Anantram, M. P.; Kwak, Dochan (Technical Monitor)

    2001-01-01

    This viewgraph presentation deals with the use of carbon nanotubes as a transport system. Contact, defects, tubular bend, phonons, and mechanical deformations all contribute to reflection within the nanotube wire. Bragg reflection, however, is native to an ideal energy transport system. Transmission resistance depends primarily on the level of energy present. Finally, the details regarding coupling between carbon nanotubes and simple metals are presented.

  19. Carbon nanotubes: Synthesis, integration and properties

    NASA Astrophysics Data System (ADS)

    Kong, Jing

    Ever since their discovery in 1991, carbon nanotubes have captured the attention of researchers worldwide due to their remarkable structural, electrical and mechanical properties. They not only offer an ideal playground for fundamental research but also render great potential for all kinds of applications, including future electronic devices, sensors, exceptionally strong materials, flat-panel displays, hydrogen fuel cells, and so on. This thesis reports the study of nanotube properties and some of its applications. It is divided into three parts: (1) The chemical synthesis of individual single-walled nanotubes (SWNTs) via chemical vapor deposition of methane; (2) the integration of individual SWNT into electronic circuits; (3) The studies on the electrical properties of these nanotubes, and the exploration of their potential applications. In order to facilitate the studies and applications of nanotubes, great efforts have been made towards their synthesis and production. Our approach is the chemical vapor deposition (CVD) method, through which we can produce individual SWNTs with high quality and high yield. However, the nanotubes produced directly using CVD (and other methods like laser ablation and arc discharge) are always tangled and bundled up together, and buried inside the graphitized bulk catalyst, which renders the manipulation and characterization a difficult task. We solved this problem by combining the chemical synthesis and conventional nanofabrication techniques together with selectively growing nanotubes at specific sites. Therefore, individual carbon nanotubes can be easily integrated into electrical circuits. Theoretical studies have shown nanotubes possess unique electronic properties; a SWNT be metallic, semiconducting or semi-metallic depending on its helicity. In our experimental studies we have observed all the 3 types of behaviors and confirmed the theoretical predictions. We also investigated the realization of various nanotube functional

  20. Carbon nanotube filters

    NASA Astrophysics Data System (ADS)

    Srivastava, A.; Srivastava, O. N.; Talapatra, S.; Vajtai, R.; Ajayan, P. M.

    2004-09-01

    Over the past decade of nanotube research, a variety of organized nanotube architectures have been fabricated using chemical vapour deposition. The idea of using nanotube structures in separation technology has been proposed, but building macroscopic structures that have controlled geometric shapes, density and dimensions for specific applications still remains a challenge. Here we report the fabrication of freestanding monolithic uniform macroscopic hollow cylinders having radially aligned carbon nanotube walls, with diameters and lengths up to several centimetres. These cylindrical membranes are used as filters to demonstrate their utility in two important settings: the elimination of multiple components of heavy hydrocarbons from petroleum-a crucial step in post-distillation of crude oil-with a single-step filtering process, and the filtration of bacterial contaminants such as Escherichia coli or the nanometre-sized poliovirus (~25 nm) from water. These macro filters can be cleaned for repeated filtration through ultrasonication and autoclaving. The exceptional thermal and mechanical stability of nanotubes, and the high surface area, ease and cost-effective fabrication of the nanotube membranes may allow them to compete with ceramic- and polymer-based separation membranes used commercially.

  1. Carbon nanotube filters.

    PubMed

    Srivastava, A; Srivastava, O N; Talapatra, S; Vajtai, R; Ajayan, P M

    2004-09-01

    Over the past decade of nanotube research, a variety of organized nanotube architectures have been fabricated using chemical vapour deposition. The idea of using nanotube structures in separation technology has been proposed, but building macroscopic structures that have controlled geometric shapes, density and dimensions for specific applications still remains a challenge. Here we report the fabrication of freestanding monolithic uniform macroscopic hollow cylinders having radially aligned carbon nanotube walls, with diameters and lengths up to several centimetres. These cylindrical membranes are used as filters to demonstrate their utility in two important settings: the elimination of multiple components of heavy hydrocarbons from petroleum-a crucial step in post-distillation of crude oil-with a single-step filtering process, and the filtration of bacterial contaminants such as Escherichia coli or the nanometre-sized poliovirus ( approximately 25 nm) from water. These macro filters can be cleaned for repeated filtration through ultrasonication and autoclaving. The exceptional thermal and mechanical stability of nanotubes, and the high surface area, ease and cost-effective fabrication of the nanotube membranes may allow them to compete with ceramic- and polymer-based separation membranes used commercially.

  2. Carbon nanotubes for microelectronics?

    PubMed

    Graham, Andrew P; Duesberg, Georg S; Seidel, Robert V; Liebau, Maik; Unger, Eugen; Pamler, Werner; Kreupl, Franz; Hoenlein, Wolfgang

    2005-04-01

    Despite all prophecies of its end, silicon-based microelectronics still follows Moore's Law and continues to develop rapidly. However, the inherent physical limits will eventually be reached. Carbon nanotubes offer the potential for further miniaturization as long as it is possible to selectively deposit them with defined properties.

  3. Integration of suspended carbon nanotube arrays into electronic devices and electromechanical systems

    NASA Astrophysics Data System (ADS)

    Franklin, Nathan R.; Wang, Qian; Tombler, Thomas W.; Javey, Ali; Shim, Moonsub; Dai, Hongjie

    2002-07-01

    A synthetic strategy is devised for reliable integration of long suspended single-walled carbon nanotubes into electrically addressable devices. The method involves patterned growth of nanotubes to bridge predefined molybdenum electrodes, and is versatile in yielding various microstructures comprised of suspended nanotubes that are electrically wired up. The approach affords single-walled nanotube devices without any postgrowth processing, and will find applications in scalable nanotube transistors (mobility up to 10 000 cm2/V s) and nanoelectromechanical systems based on nanowires.

  4. The Toxicology of Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Donaldson, Ken; Poland, Craig; Duffin, Rodger; Bonner, James

    2012-06-01

    1. Carbon nanotube structure, synthesis and applications C. Singh and W. Song; 2. The aerodynamic behaviour and pulmonary deposition of carbon nanotubes A. Buckley, R. Smith and R Maynard; 3. Utilising the concept of the biologically effective dose to define the particle and fibre hazards of carbon nanotubes K. Donaldson, R. Duffin, F. Murphy and C. Poland; 4. CNT, biopersistence and the fibre paradigm D. Warheit and M. DeLorme; 5. Length-dependent retention of fibres in the pleural space C. Poland, F. Murphy and K. Donaldson; 6. Experimental carcinogenicity of carbon nanotubes in the context of other fibres K. Unfried; 7. Fate and effects of carbon nanotubes following inhalation J. Ryman-Rasmussen, M. Andersen and J. Bonner; 8. Responses to pulmonary exposure to carbon nanotubes V. Castranova and R. Mercer; 9. Genotoxicity of carbon nanotubes R. Schins, C. Albrecht, K. Gerloff and D. van Berlo; 10. Carbon nanotube-cellular interactions; macrophages, epithelial and mesothelial cells V. Stone, M. Boyles, A. Kermanizadeh, J. Varet and H. Johnston; 11. Systemic health effects of carbon nanotubes following inhalation J. McDonald; 12. Dosimetry and metrology of carbon nanotubes L. Tran, L. MacCalman and R. Aitken; Index.

  5. Carbon Nanotube Purification and Functionalization

    NASA Technical Reports Server (NTRS)

    Lebron, Marisabel; Mintz, Eric; Smalley, Richard E.; Meador, Michael A.

    2003-01-01

    Carbon nanotubes have the potential to significantly enhance the mechanical, thermal, and electrical properties of polymers. However, dispersion of carbon nanotubes in a polymer matrix is hindered by the electrostatic forces that cause them to agglomerate. Chemical modification of the nanotubes is necessary to minimize these electrostatic forces and promote adhesion between the nanotubes and the polymer matrix. In a collaborative research program between Clark Atlanta University, Rice University, and NASA Glenn Research Center several approaches are being explored to chemically modify carbon nanotubes. The results of this research will be presented.

  6. Production of carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Journet, C.; Bernier, P.

    Carbon nanostructures such as single-walled and multi-walled nanotubes (SWNTs and MWNTs) or graphitic polyhedral nanoparticles can be produced using various methods. Most of them are based on the sublimation of carbon under an inert atmosphere, such as the electric arc discharge process, the laser ablation method, or the solar technique. But chemical methods can also be used to synthesize these kinds of carbon materials: the catalytic decomposition of hydrocarbons, the production by electrolysis, the heat treatment of a polymer, the low temperature solid pyrolysis, or the in situ catalysis.

  7. Carbon nanotubes on a substrate

    DOEpatents

    Gao, Yufei [Kennewick, WA; Liu, Jun [West Richland, WA

    2002-03-26

    The present invention includes carbon nanotubes whose hollow cores are 100% filled with conductive filler. The carbon nanotubes are in uniform arrays on a conductive substrate and are well-aligned and can be densely packed. The uniformity of the carbon nanotube arrays is indicated by the uniform length and diameter of the carbon nanotubes, both which vary from nanotube to nanotube on a given array by no more than about 5%. The alignment of the carbon nanotubes is indicated by the perpendicular growth of the nanotubes from the substrates which is achieved in part by the simultaneous growth of the conductive filler within the hollow core of the nanotube and the densely packed growth of the nanotubes. The present invention provides a densely packed carbon nanotube growth where each nanotube is in contact with at least one nearest-neighbor nanotube. The substrate is a conductive substrate coated with a growth catalyst, and the conductive filler can be single crystals of carbide formed by a solid state reaction between the substrate material and the growth catalyst. The present invention further provides a method for making the filled carbon nanotubes on the conductive substrates. The method includes the steps of depositing a growth catalyst onto the conductive substrate as a prepared substrate, creating a vacuum within a vessel which contains the prepared substrate, flowing H2/inert (e.g. Ar) gas within the vessel to increase and maintain the pressure within the vessel, increasing the temperature of the prepared substrate, and changing the H2/Ar gas to ethylene gas such that the ethylene gas flows within the vessel. Additionally, varying the density and separation of the catalyst particles on the conductive substrate can be used to control the diameter of the nanotubes.

  8. Method of manufacturing carbon nanotubes

    NASA Technical Reports Server (NTRS)

    Benavides, Jeanette M. (Inventor); Leidecker, Henning W. (Inventor); Frazier, Jeffrey (Inventor)

    2004-01-01

    A process for manufacturing carbon nanotubes, including a step of inducing electrical current through a carbon anode and a carbon cathode under conditions effective to produce the carbon nanotubes, wherein the carbon cathode is larger than the carbon anode. Preferably, a welder is used to induce the electrical current via an arc welding process. Preferably, an exhaust hood is placed on the anode, and the process does not require a closed or pressurized chamber. The process provides high-quality, single-walled carbon nanotubes, while eliminating the need for a metal catalyst.

  9. Spectroscopy of Many-Body Effects in Carbon Nanotubes

    DTIC Science & Technology

    2010-05-15

    modules of this project: Module 1. Fabrication of Carbon Nanotube Field Effect Transistor ( CNTFET ): At the heart of this project lies the...fabrication of CNTFET which enables us to controllably change the Fermi energy in a semiconducting nanotube by changing the gate voltage. By applying a...the CNTFET device. We have a new design for the fabrication procedure of CNTFET with a step-by-step roadmap towards completion of the device. We

  10. Carbon nanotube network varactor

    NASA Astrophysics Data System (ADS)

    Generalov, A. A.; Anoshkin, I. V.; Erdmanis, M.; Lioubtchenko, D. V.; Ovchinnikov, V.; Nasibulin, A. G.; Räisänen, A. V.

    2015-01-01

    Microelectromechanical system (MEMS) varactors based on a freestanding layer of single-walled carbon nanotube (SWCNT) films were designed, fabricated and tested. The freestanding SWCNT film was employed as a movable upper patch in the parallel plate capacitor of the MEMS. The measurements of the SWCNT varactors show very high tunability, nearly 100%, of the capacitance with a low actuation voltage of 10 V. The functionality of the varactor is improved by implementing a flexible nanocellulose aerogel filling.

  11. Carbon Nanotubes Toxicity

    NASA Astrophysics Data System (ADS)

    Bellucci, Stefano

    We describe current and possible future developments in nanotechnology for biological and medical applications. Nanostructured, composite materials for drug delivery, biosensors, diagnostics and tumor therapy are reviewed as examples, placing special emphasis on silica composites. Carbon nanotubes are discussed as a primary example of emerging nanomaterials for many of the above-mentioned applications. Toxicity effects of this novel nanomaterial are discussed and the need for further study of potential hazards for human health, professionally exposed workers and the environment is motivated.

  12. Carbon nanotube IR detectors (SV)

    SciTech Connect

    Leonard, F. L.

    2012-03-01

    Sandia National Laboratories (Sandia) and Lockheed Martin Corporation (LMC) collaborated to (1) evaluate the potential of carbon nanotubes as channels in infrared (IR) photodetectors; (2) assemble and characterize carbon nanotube electronic devices and measure the photocurrent generated when exposed to infrared light;(3) compare the performance of the carbon nanotube devices with that of traditional devices; and (4) develop and numerically implement models of electronic transport and opto-electronic behavior of carbon nanotube infrared detectors. This work established a new paradigm for photodetectors.

  13. Carbon Nanotubes Based Quantum Devices

    NASA Technical Reports Server (NTRS)

    Lu, Jian-Ping

    1999-01-01

    This document represents the final report for the NASA cooperative agreement which studied the application of carbon nanotubes. The accomplishments are reviewed: (1) Wrote a review article on carbon nanotubes and its potentials for applications in nanoscale quantum devices. (2) Extensive studies on the effects of structure deformation on nanotube electronic structure and energy band gaps. (3) Calculated the vibrational spectrum of nanotube rope and the effect of pressure. and (4) Investigate the properties of Li intercalated nanotube ropes and explore their potential for energy storage materials and battery applications. These studies have lead to four publications and seven abstracts in international conferences.

  14. Self-consistent electrothermal analysis of nanotube network transistors

    NASA Astrophysics Data System (ADS)

    Kumar, S.; Pimparkar, N.; Murthy, J. Y.; Alam, M. A.

    2011-01-01

    We develop an electrothermal transport model for nanocomposite thin films based on self-consistent solution of drift-diffusion and Poisson equations for electrons coupled with diffusive transport of heat. This model is used to analyze the performance of an electronic display the pixels of which are controlled by carbon nanotube (CNT) network thin-film transistors (TFTs). The effect of electrothermal coupling on device performance and steady state temperature rise is analyzed as a function of key device parameters such as channel length, network density, tube-to-substrate thermal conductance, and tube-to-substrate thermal conductivity ratio. Our analysis suggests that device on-current Ion may reduce by 30% for a 1 μm channel length devices due to self-heating. The temperature rise in such devices can be as high as 500 K in extreme cases due to the thermally insulating substrate and the low tube-to-substrate thermal conductance. These results suggest that an appropriate combination of network density, channel length and width should be selected for CNT-TFTs to avoid device temperature rise above acceptable limits. We analyze the effectiveness of active cooling in reducing the temperature and enhancing the performance of the device. We find that the high thermal spreading resistance between the CNT device and the electronic display reduces the effectiveness of forced convective cooling, necessitating the exploration of alternative designs for viable CNT-FET based display technology.

  15. High Speed Capacitor-Inverter Based Carbon Nanotube Full Adder

    PubMed Central

    2010-01-01

    Carbon Nanotube filed-effect transistor (CNFET) is one of the promising alternatives to the MOS transistors. The geometry-dependent threshold voltage is one of the CNFET characteristics, which is used in the proposed Full Adder cell. In this paper, we present a high speed Full Adder cell using CNFETs based on majority-not (Minority) function. Presented design uses eight transistors and eight capacitors. Simulation results show significant improvement in terms of delay and power-delay product in comparison to contemporary CNFET Adder Cells. Simulations were carried out using HSPICE based on CNFET model with 0.6 V VDD. PMID:20671796

  16. High speed capacitor-inverter based carbon nanotube full adder.

    PubMed

    Navi, K; Rashtian, M; Khatir, A; Keshavarzian, P; Hashemipour, O

    2010-03-18

    Carbon Nanotube filed-effect transistor (CNFET) is one of the promising alternatives to the MOS transistors. The geometry-dependent threshold voltage is one of the CNFET characteristics, which is used in the proposed Full Adder cell. In this paper, we present a high speed Full Adder cell using CNFETs based on majority-not (Minority) function. Presented design uses eight transistors and eight capacitors. Simulation results show significant improvement in terms of delay and power-delay product in comparison to contemporary CNFET Adder Cells. Simulations were carried out using HSPICE based on CNFET model with 0.6 V VDD.

  17. Semiconducting nanotube dominant chemical vapor deposition synthesis of isopropanol carbon feedstock

    NASA Astrophysics Data System (ADS)

    Che, Yuchi; Wang, Chuan; Liu, Jia; Lin, Xue; Wong, H.-S. Philip; Zhou, Chongwu

    2012-02-01

    The development of guided chemical vapor deposition (CVD) growth of single wall carbon nanotubes provides great platform for wafer-scale integration of aligned nanotube into circuits and systems. However, the co-existence of the metallic and semiconducting nanotubes is still a major problem for the development of carbon nanotube based nanoelectronics. To address this limitation, we developed a method to get semiconducting dominant nanotube by using isopropanol carbon feedstock. We achieved a purity of 87% of semiconducting nanotube growth, which was verified by measuring single nanotube transistors fabricated from aligned nanotube arrays. Besides, Raman spectrum was characterized to confirm the enhanced fraction of semiconducting nanotube as well. To further understand chemical mechanism of synthesis at atomic level, we performed the mass spectrum study and compared the measurement results from different carbon source. Furthermore, to discuss the future application of this synthesis method, we fabricated thin-film transistor from as-grown nanotube network. Transistor with on/off ratio over 104 and mobility up to 116 cm2/vs was achieved, which shows great potential for thin-film transistor applications.

  18. Carbon nanotube Archimedes screws.

    PubMed

    Oroszlány, László; Zólyomi, Viktor; Lambert, Colin J

    2010-12-28

    Recently, nanomechanical devices composed of a long stationary inner carbon nanotube and a shorter, slowly rotating outer tube have been fabricated. In this paper, we study the possibility of using such devices as nanoscale transducers of motion into electricity. When the outer tube is chiral, we show that such devices act like quantum Archimedes screws, which utilize mechanical energy to pump electrons between reservoirs. We calculate the pumped charge from one end of the inner tube to the other, driven by the rotation of a chiral outer nanotube. We show that the pumped charge can be greater than one electron per 360° rotation, and consequently, such a device operating with a rotational frequency of 10 MHz, for example, would deliver a current of ≈1 pAmp.

  19. Synthesis, assembly, and applications of single-walled carbon nanotube

    NASA Astrophysics Data System (ADS)

    Ryu, Koungmin

    This dissertation presents the synthesis and assembly of aligned carbon nanotubes, and their applications in both nano-electronics such as transistor and integrated circuits and macro-electronics in energy conversion devices as transparent conducting electrodes. Also, the high performance chemical sensor using metal oxide nanowire has been demonstrated. Chapter 1 presents a brief introduction of carbon nanotube, followed by discussion of a new synthesis technique using nanosphere lithography to grow highly aligned single-walled carbon nanotubes atop quartz and sapphire substrates. This method offers great potential to produce carbon nanotube arrays with simultaneous control over the nanotube orientation, position, density, diameter and even chirality. Chapter 3 introduces the wafer-scale integration and assembly of aligned carbon nanotubes, including full-wafer scale synthesis and transfer of massively aligned carbon nanotube arrays, and nanotube device fabrication on 4 inch Si/SiO2 wafer to yield submicron channel transistors with high on-current density ˜ 20 muA/mum and good on/off ratio and CMOS integrated circuits. In addition, various chemical doping methods for n-type nanotube transistors are studied to fabricate CMOS integrated nanotube circuits such as inverter, NAND and NOR logic devices. Furthermore, defect-tolerant circuit design for NAND and NOR is proposed and demonstrated to guarantee the correct operation of logic circuit, regardless of the presence of mis-aligned or mis-positioned nanotubes. Carbon nanotube flexible electronics and smart textiles for ubiquitous computing and sensing are demonstrated in chapter 4. A facile transfer printing technique has been introduced to transfer massively aligned single-walled carbon nanotubes from the original sapphire/quartz substrates to virtually any other substrates, including glass, silicon, polymer sheets, and even fabrics. The characterization of transferred nanotubes reveals that the transferred

  20. Carbon nanotubes: opportunities and challenges

    NASA Astrophysics Data System (ADS)

    Dai, Hongjie

    2002-03-01

    Carbon nanotubes are graphene sheets rolled-up into cylinders with diameters as small as one nanometer. Extensive work carried out worldwide in recent years has revealed the intriguing electrical and mechanical properties of these novel molecular scale wires. It is now well established that carbon nanotubes are ideal model systems for studying the physics in one-dimensional solids and have significant potential as building blocks for various practical nanoscale devices. Nanotubes have been shown to be useful for miniaturized electronic, mechanical, electromechanical, chemical and scanning probe devices and materials for macroscopic composites. Progress in nanotube growth has facilitated the fundamental study and applications of nanotubes. Gaining control over challenging nanotube growth issues is critical to the future advancement of nanotube science and technology, and is being actively pursued by researchers.

  1. Half-metallic carbon nanotubes.

    PubMed

    Lee, Kyu Won; Lee, Cheol Eui

    2012-04-17

    Half-metallicity in carbon nanotubes is achieved and controlled by hydrogen adsorption patterns. The edge states in carbon nanotubes are unstable under an electric field due to the spin-conserving electron transfer between the edges, but a large enough transfer barrier between the edge states, obtained by controlling the adsorption patterns, renders the CNTs half-metallic.

  2. Carbon Nanotube Based Flexible Supercapacitors

    DTIC Science & Technology

    2011-04-01

    NOTES 14. ABSTRACT Electrochemical double layer capacitors are fabricated using carbon nanotube (CNT)/paper flexible electrodes. An extensive...TERMS Carbon nanotube, supercapacitor, electrochemical double layer capacitor 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT UU 18...layer capacitors (Supercapacitors) are expected to play a significant role in future hybrid power systems due to their high specific power, cycle

  3. Carbon Nanotube for Radio-frequency Electronics.

    PubMed

    Donglai, Zhong; Zhang, Zhiyong; Peng, Lian-Mao

    2017-03-31

    Carbon nanotube (CNT) is considered as a promising material for radio frequency (RF) applications owing to its high carrier mobility and saturated drift velocity, as well as ultra-small intrinsic gate capacitance. Here we review the progress on CNT-based devices and integrated circuits for RF applications, including theoretical projection of RF performance of CNT-based devices, preparation of CNT materials, fabrication, optimization of RF field-effect transistors (FETs) structures, ambipolar FET based RF applications, and outline the challenges and prospective of CNT-based RF applications.

  4. Assembly, physics, and application of highly electronic-type purified semiconducting carbon nanotubes in aligned array field effect transistors and photovoltaics

    NASA Astrophysics Data System (ADS)

    Arnold, Michael

    2015-03-01

    Recent advances in (1) achieving highly monodisperse semiconducting carbon nanotubes without problematic metallic nanotubes and (2) depositing these nanotubes into useful, organized arrays and assemblies on substrates have created new opportunities for studying the physics of these one-dimensional conductors and for applying them in electronics and photonics technologies. In this talk, I will present on two topics that are along these lines. In the first, we have pioneered a scalable approach for depositing aligned arrays of ultrahigh purity semiconducting SWCNTs (prepared using polyfluorene-derivatives) called floating evaporative self-assembly (FESA). FESA is exploited to create FETs with exceptionally high combined on-conductance and on-off ratio of 261 μS/ μm and 2 x105, respectively, for a channel length of 240 nm. This is 1400 x greater on-off ratio than SWCNT FETs fabricated by other methods, at comparable on-conductance per width of 250 μS/ μm, and 30-100 x greater on-conductance per width, at comparable on-off ratio of 105-107. In the second, we have discovered how to efficiently harvest photons using semiconducting SWCNTs by driving the dissociation of excitons using donor/acceptor heterojunctions. The flow of energy in SWCNT films occurs across a complex energy landscape, temporally resolved using two-dimensional white light ultrafast spectroscopy. We have demonstrated simple solar cells driven by SWCNT excitons, based on bilayers between C60 and ultrathin (5 nm) films of SWCNTs that achieve a 1% solar power conversion efficiency (7% at the bandgap). High internal quantum efficiency indicates that future blended or multijunction cells exploiting multiple layers will be many times more efficient.

  5. Carbon nanotubes as liquid crystals.

    PubMed

    Zhang, Shanju; Kumar, Satish

    2008-09-01

    Carbon nanotubes are the best of known materials with a combination of excellent mechanical, electronic, and thermal properties. To fully exploit individual nanotube properties for various applications, the grand challenge is to fabricate macroscopic ordered nanotube assemblies. Liquid-crystalline behavior of the nanotubes provides a unique opportunity toward reaching this challenge. In this Review, the recent developments in this area are critically reviewed by discussing the strategies for fabricating liquid-crystalline phases, addressing the solution properties of liquid-crystalline suspensions, and exploiting the practical techniques of liquid-crystal routes to prepare macroscopic nanotube fibers and films.

  6. Carbon nanotube sensors

    NASA Astrophysics Data System (ADS)

    Dai, Liming

    2002-07-01

    Measurement represents one of the oldest methods used by human beings to better understand and control the world. Many measurement systems are primarily physical sensors, which measure time, temperature, weight, distance, and various other physical parameters. The need for cheaper, faster, and more accurate meansurements has been a driving force for the development of new systems and technologies for measurements of materials, both chemical and biological. In fact, chemical and biological sensors (or biosensors) are the evolved products of physical measurement technologies. Chemical sensors are measurement devices that convert a chemical or physical change of a specific analyte into a measurable signal, whose magnitude is normally proportional to the concentration of the analyte. On the other hand, biosensors are a subset of chemical sensors that employ a biological sensing element connected to a transducer to recognize the physiochemical change and to produce the measurable signal from particular analytes, which are not necessary to be biological materials themselves, although sometimes they are. Depending on the basis of the transduction principle, chemical and biological sensors can be classified into three major classes with different transducers: sensors with electrical transducers, sensors with optical transducers, and sensors with other transducers (e.g. mass change). The unique properties of carbon nanotubes have led to their use in areas as diverse as sensors, actuators, field-emitting flat panel displays, energy and gas storages (Dai and Mau, 2001). As we shall see below, the principles for carbon nanotube sensors to detect the nature of gases and to determine their concentrations are based on change in electrical properties induced by charge transfer with the gas molecules (e.g. O2, H2, CO2) or in mass due to physical adsorption. This article provides a status report on the research and development of carbon nanotube sensors.

  7. Studies of Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Caneba, Gerard T.

    2005-01-01

    The fellowship experience for this summer for 2004 pertains to carbon nanotube coatings for various space-related applications. They involve the following projects: (a) EMI protection films from HiPco-polymers, and (b) Thermal protection nanosilica materials. EMI protection films are targeted to be eventually applied onto casings of laptop computers. These coatings are composites of electrically-conductive SWNTs and compatible polymers. The substrate polymer will be polycarbonate, since computer housings are typically made of carbon composites of this type of polymer. A new experimental copolymer was used last year to generate electrically-conductive and thermal films with HiPco at 50/50 wt/wt composition. This will be one of the possible formulations. Reference films will be base polycarbonate and neat HiPco onto polycarbonate films. Other coating materials that will be tried will be based on HiPco composites with commercial enamels (polyurethane, acrylic, polyester), which could be compatible with the polycarbonate substrate. Nanosilica fibers are planned for possible use as thermal protection tiles on the shuttle orbiter. Right now, microscale silica is used. Going to the nanoscale will increase the surface-volume-per-unit-area of radiative heat dissipation. Nanoscale carbon fibers/nanotubes can be used as templates for the generation of nanosilica. A sol-gel operation is employed for this purpose.

  8. Functionalization of Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Khare, Bishun N. (Inventor); Meyyappan, Meyya (Inventor)

    2007-01-01

    Method and system for functionalizing a collection of carbon nanotubes (CNTs). A selected precursor gas (e.g., H2, or F2, or CnHm) is irradiated to provide a cold plasma of selected target particles, such as atomic H or F, in a first chamber. The target particles are directed toward an array of CNTs located in a second chamber while suppressing transport of ultraviolet radiation to the second chamber. A CNT array is functionalized with the target particles, at or below room temperature, to a point of saturation, in an exposure time interval no longer than about 30 sec.

  9. Functionalization of carbon nanotubes

    NASA Technical Reports Server (NTRS)

    Khare, Bishun N. (Inventor); Meyyappan, Meyya (Inventor)

    2007-01-01

    Method and system for functionalizing a collection of carbon nanotubes (CNTs). A selected precursor gas (e.g., H.sub.2 or F.sub.2 or C.sub.nH.sub.m) is irradiated to provide a cold plasma of selected target particles, such as atomic H or F, in a first chamber. The target particles are directed toward an array of CNTs located in a second chamber while suppressing transport of ultraviolet radiation to the second chamber. A CNT array is functionalized with the target particles, at or below room temperature, to a point of saturation, in an exposure time interval no longer than about 30 sec.

  10. Carbon Nanotube Interconnect

    NASA Technical Reports Server (NTRS)

    Li, Jun (Inventor); Meyyappan, Meyya (Inventor)

    2006-01-01

    Method and system for fabricating an electrical interconnect capable of supporting very high current densities ( 10(exp 6)-10(exp 10) Amps/sq cm), using an array of one or more carbon nanotubes (CNTs). The CNT array is grown in a selected spaced apart pattern, preferably with multi-wall CNTs, and a selected insulating material, such as SiOw, or SiuNv is deposited using CVD to encapsulate each CNT in the array. An exposed surface of the insulating material is planarized to provide one or more exposed electrical contacts for one or more CNTs.

  11. Carbon Nanotubes for Space Applications

    NASA Technical Reports Server (NTRS)

    Meyyappan, Meyya

    2000-01-01

    The potential of nanotube technology for NASA missions is significant and is properly recognized by NASA management. Ames has done much pioneering research in the last five years on carbon nanotube growth, characterization, atomic force microscopy, sensor development and computational nanotechnology. NASA Johnson Space Center has focused on laser ablation production of nanotubes and composites development. These in-house efforts, along with strategic collaboration with academia and industry, are geared towards meeting the agency's mission requirements. This viewgraph presentation (including an explanation for each slide) outlines the research focus for Ames nanotechnology, including details on carbon nanotubes' properties, applications, and synthesis.

  12. Continuous carbon nanotube reinforced composites.

    PubMed

    Ci, L; Suhr, J; Pushparaj, V; Zhang, X; Ajayan, P M

    2008-09-01

    Carbon nanotubes are considered short fibers, and polymer composites with nanotube fillers are always analogues of random, short fiber composites. The real structural carbon fiber composites, on the other hand, always contain carbon fiber reinforcements where fibers run continuously through the composite matrix. With the recent optimization in aligned nanotube growth, samples of nanotubes in macroscopic lengths have become available, and this allows the creation of composites that are similar to the continuous fiber composites with individual nanotubes running continuously through the composite body. This allows the proper utilization of the extreme high modulus and strength predicted for nanotubes in structural composites. Here, we fabricate such continuous nanotube polymer composites with continuous nanotube reinforcements and report that under compressive loadings, the nanotube composites can generate more than an order of magnitude improvement in the longitudinal modulus (up to 3,300%) as well as damping capability (up to 2,100%). It is also observed that composites with a random distribution of nanotubes of same length and similar filler fraction provide three times less effective reinforcement in composites.

  13. Analysis of long-channel nanotube field-effect-transistors (NT FETs)

    NASA Technical Reports Server (NTRS)

    Toshishige, Yamada; Kwak, Dochan (Technical Monitor)

    2001-01-01

    This viewgraph presentation provides an analysis of long-channel nanotube (NT) field effect transistors (FET) from NASA's Ames Research Center. The structure of such a transistor including the electrode contact, 1D junction, and the planar junction is outlined. Also mentioned are various characteristics of a nanotube tip-equipped scanning tunnel microscope (STM).

  14. Carbon Nanotube Biosensors

    NASA Astrophysics Data System (ADS)

    Tilmaciu, Carmen-Mihaela; Morris, May

    2015-10-01

    Nanomaterials possess unique features which make them particularly attractive for biosensing applications. In particular Carbon Nanotubes (CNTs) can serve as scaffolds for immobilization of biomolecules at their surface, and combine several exceptional physical, chemical, electrical and optical characteristics properties which make them one of the best suited materials for the transduction of signals associated with the recognition of analytes, metabolites or disease biomarkers. Here we provide a comprehensive review on these carbon nanostructures, in which we will describe their structural and physical properties, discuss functionalization and cellular uptake, biocompatibility and toxicity issues. We further review historical developments in the field of biosensors, and describe the different types of biosensors which have been developed over time, with specific focus on CNT-conjugates engineered for biosensing applications, and in particular detection of cancer biomarkers.

  15. Carbon nanotube biosensors

    PubMed Central

    Tîlmaciu, Carmen-Mihaela; Morris, May C.

    2015-01-01

    Nanomaterials possess unique features which make them particularly attractive for biosensing applications. In particular, carbon nanotubes (CNTs) can serve as scaffolds for immobilization of biomolecules at their surface, and combine several exceptional physical, chemical, electrical, and optical characteristics properties which make them one of the best suited materials for the transduction of signals associated with the recognition of analytes, metabolites, or disease biomarkers. Here we provide a comprehensive review on these carbon nanostructures, in which we describe their structural and physical properties, functionalization and cellular uptake, biocompatibility, and toxicity issues. We further review historical developments in the field of biosensors, and describe the different types of biosensors which have been developed over time, with specific focus on CNT-conjugates engineered for biosensing applications, and in particular detection of cancer biomarkers. PMID:26579509

  16. Atomic transportation via carbon nanotubes.

    PubMed

    Wang, Quan

    2009-01-01

    The transportation of helium atoms in a single-walled carbon nanotube is reported via molecular dynamics simulations. The efficiency of the atomic transportation is found to be dependent on the type of the applied loading and the loading rate as well as the temperature in the process. Simulations show the transportation is a result of the van der Waals force between the nanotube and the helium atoms through a kink propagation initiated in the nanotube.

  17. Method for synthesizing carbon nanotubes

    DOEpatents

    Fan, Hongyou

    2012-09-04

    A method for preparing a precursor solution for synthesis of carbon nanomaterials, where a polar solvent is added to at least one block copolymer and at least one carbohydrate compound, and the precursor solution is processed using a self-assembly process and subsequent heating to form nanoporous carbon films, porous carbon nanotubes, and porous carbon nanoparticles.

  18. Electronic and Ionic Transport in Carbon Nanotubes and Other Nanostructures

    NASA Astrophysics Data System (ADS)

    Cao, Di

    This thesis describes several experiments based on carbon nanotube nanofludic devices and field-effect transistors. The first experiment detected ion and molecule translocation through one single-walled carbon nanotube (SWCNT) that spans a barrier between two fluid reservoirs. The electrical ionic current is measured. Translocation of small single stranded DNA oligomers is marked by large transient increases in current through the tube and confirmed by a PCR (polymerase chain reaction) analysis. Carbon nanotubes simplify the construction of nanopores, permit new types of electrical measurement, and open new avenues for control of DNA translocation. The second experiment constructed devices in which the interior of a single-walled carbon nanotube field-effect transistor (CNT-FET) acts as a nanofluidic channel that connects two fluid reservoirs, permitting measurement of the electronic properties of the SWCNT as it is wetted by an analyte. Wetting of the inside of the SWCNT by water turns the transistor on, while wetting of the outside has little effect. This finding may provide a new method to investigate water behavior at nanoscale. This also opens a new avenue for building sensors in which the SWCNT functions as an electronic detector. This thesis also presents some experiments that related to nanofabrication, such as construction of FET with tin sulfide (SnS) quantum ribbon. This work demonstrates the application of solution processed IV-VI semiconductor nanostructures in nanoscale devices.

  19. Carbon nanotubes in hyperthermia therapy.

    PubMed

    Singh, Ravi; Torti, Suzy V

    2013-12-01

    Thermal tumor ablation therapies are being developed with a variety of nanomaterials, including single- and multiwalled carbon nanotubes. Carbon nanotubes (CNTs) have attracted interest due to their potential for simultaneous imaging and therapy. In this review, we highlight in vivo applications of carbon nanotube-mediated thermal therapy (CNMTT) and examine the rationale for use of this treatment in recurrent tumors or those resistant to conventional cancer therapies. Additionally, we discuss strategies to localize and enhance the cancer selectivity of this treatment and briefly examine issues relating the toxicity and long term fate of CNTs.

  20. Carbon nanotubes as vaccine scaffolds

    PubMed Central

    Scheinberg, David A.; McDevitt, Michael R.; Dao, Tao; Mulvey, Justin J.; Feinberg, Evan; Alidori, Simone

    2013-01-01

    Carbon nanotubes display characteristics that are potentially useful in their development as scaffolds for vaccine compositions. These features include stability in vivo, lack of intrinsic immunogenicity, low toxicity, and the ability to be appended with multiple copies of antigens. In addition, the particulate nature of carbon nanotubes and their unusual properties of rapid entry into antigen-presenting cells, such as dendritic cells, make them especially useful as carriers of antigens. Early attempts demonstrating carbon nanotube-based vaccines can be used in both infectious disease settings and cancer are promising. PMID:23899863

  1. Carbon nanotubes in hyperthermia therapy

    PubMed Central

    Singh, Ravi; Torti, Suzy V.

    2013-01-01

    Thermal tumor ablation therapies are being developed with a variety of nanomaterials, including single-and multiwalled carbon nanotubes. Carbon nanotubes (CNTs) have attracted interest due to their potential for simultaneous imaging and therapy. In this review, we highlight in vivo applications of carbon nanotube-mediated thermal therapy (CNMTT) and examine the rationale for use of this treatment in recurrent tumors or those resistant to conventional cancer therapies. Additionally, we discuss strategies to localize and enhance the cancer selectivity of this treatment and briefly examine issues relating the toxicity and long term fate of CNTs. PMID:23933617

  2. Observation of the urbach tail in the effective density of States in carbon nanotubes.

    PubMed

    Jones, David A; Lee, Ji Ung

    2011-10-12

    While a number of studies have reported evidence of localized states in carbon nanotube devices, the density distribution of these states has not been reported until now. By measuring trap emission current in carbon nanotube field-effect transistors, we observe a prominent exponential tail in the density of states near the band edge. Since continuous distributions of localized states are typically associated with highly disordered systems, this observation was quite unexpected in carbon nanotubes, which are nearly ideal crystals. This continuum of localized states may explain a variety of phenomena in carbon nanotube systems, including the nearly universal lack of n-type conduction in strongly gated field-effect transistors. While our focus is on carbon nanotubes, this phenomenon may be ubiquitous to low-dimensional semiconductors in nonvacated environments.

  3. Carbon nanotubes: engineering biomedical applications.

    PubMed

    Gomez-Gualdrón, Diego A; Burgos, Juan C; Yu, Jiamei; Balbuena, Perla B

    2011-01-01

    Carbon nanotubes (CNTs) are cylinder-shaped allotropic forms of carbon, most widely produced under chemical vapor deposition. They possess astounding chemical, electronic, mechanical, and optical properties. Being among the most promising materials in nanotechnology, they are also likely to revolutionize medicine. Among other biomedical applications, after proper functionalization carbon nanotubes can be transformed into sophisticated biosensing and biocompatible drug-delivery systems, for specific targeting and elimination of tumor cells. This chapter provides an introduction to the chemical and electronic structure and properties of single-walled carbon nanotubes, followed by a description of the main synthesis and post-synthesis methods. These sections allow the reader to become familiar with the specific characteristics of these materials and the manner in which these properties may be dependent on the specific synthesis and post-synthesis processes. The chapter ends with a review of the current biomedical applications of carbon nanotubes, highlighting successes and challenges.

  4. Method for producing carbon nanotubes

    DOEpatents

    Phillips, Jonathan; Perry, William L.; Chen, Chun-Ku

    2006-02-14

    Method for producing carbon nanotubes. Carbon nanotubes were prepared using a low power, atmospheric pressure, microwave-generated plasma torch system. After generating carbon monoxide microwave plasma, a flow of carbon monoxide was directed first through a bed of metal particles/glass beads and then along the outer surface of a ceramic tube located in the plasma. As a flow of argon was introduced into the plasma through the ceramic tube, ropes of entangled carbon nanotubes, attached to the surface of the tube, were produced. Of these, longer ropes formed on the surface portion of the tube located in the center of the plasma. Transmission electron micrographs of individual nanotubes revealed that many were single-walled.

  5. Carbon nanotube electronics--moving forward.

    PubMed

    Wang, Chuan; Takei, Kuniharu; Takahashi, Toshitake; Javey, Ali

    2013-04-07

    Single-walled carbon nanotubes (SWNTs) possess fascinating electrical properties and offer new entries into a wide range of novel electronic applications that are unattainable with conventional Si-based devices. The field initially focused on the use of individual or parallel arrays of nanotubes as the channel material for ultra-scaled nanoelectronic devices. However, the challenge in the deterministic assembly has proven to be a major technological barrier. In recent years, solution deposition of semiconductor-enriched SWNT networks has been actively explored for high performance and uniform thin-film transistors (TFTs) on mechanically rigid and flexible substrates. This presents a unique niche for nanotube electronics by overcoming their limitations and taking full advantage of their superb chemical and physical properties. This review focuses on the large-area processing and electronic properties of SWNT TFTs. A wide range of applications in conformal integrated circuits, radio-frequency electronics, artificial skin sensors, and displays are discussed--with emphasis on large-area systems where nm-scale accuracy in the assembly of nanotubes is not required. The demonstrations show SWNTs' immense promise as a low-cost and scalable TFT technology for nonconventional electronic systems with excellent device performances.

  6. Carbon nanotube electron gun

    NASA Technical Reports Server (NTRS)

    Nguyen, Cattien V. (Inventor); Ribaya, Bryan P. (Inventor)

    2010-01-01

    An electron gun, an electron source for an electron gun, an extractor for an electron gun, and a respective method for producing the electron gun, the electron source and the extractor are disclosed. Embodiments provide an electron source utilizing a carbon nanotube (CNT) bonded to a substrate for increased stability, reliability, and durability. An extractor with an aperture in a conductive material is used to extract electrons from the electron source, where the aperture may substantially align with the CNT of the electron source when the extractor and electron source are mated to form the electron gun. The electron source and extractor may have alignment features for aligning the electron source and the extractor, thereby bringing the aperture and CNT into substantial alignment when assembled. The alignment features may provide and maintain this alignment during operation to improve the field emission characteristics and overall system stability of the electron gun.

  7. Carbon Nanotube Electron Gun

    NASA Technical Reports Server (NTRS)

    Nguyen, Cattien V. (Inventor); Ribaya, Bryan P. (Inventor)

    2013-01-01

    An electron gun, an electron source for an electron gun, an extractor for an electron gun, and a respective method for producing the electron gun, the electron source and the extractor are disclosed. Embodiments provide an electron source utilizing a carbon nanotube (CNT) bonded to a substrate for increased stability, reliability, and durability. An extractor with an aperture in a conductive material is used to extract electrons from the electron source, where the aperture may substantially align with the CNT of the electron source when the extractor and electron source are mated to form the electron gun. The electron source and extractor may have alignment features for aligning the electron source and the extractor, thereby bringing the aperture and CNT into substantial alignment when assembled. The alignment features may provide and maintain this alignment during operation to improve the field emission characteristics and overall system stability of the electron gun.

  8. Toxicity of carbon nanotubes.

    PubMed

    Wang, Jing; Xu, Yuanzhi; Yang, Zhi; Huang, Renhuan; Chen, Jing; Wang, Raorao; Lin, Yunfeng

    2013-10-01

    Carbon nanotubes (CNTs) find their extensive application as a promising material in medicine due to unique characteristics. However, such materials have been accompanied with potentially hazardous effects on human health. The toxicity of CNTs may vary depending on their structural characteristics, surface properties and chemical composition. To gain insight into the toxicity of CNTs in vivo and in vitro, we summarize contributing factors for the toxic effects of CNTs in this review. In addition, we elaborate on the toxic effects and mechanisms in target sites at systemic, organic, cellular, and biomacromolecule levels. Various issues are reported to be effected when exposed to CNTs including (1) blood circulation, (2) lymph circulation, (3) lung, (4) heart, (5) kidney, (6) spleen, (7) bone marrow, and (8) blood brain barrier. Though there have been published reports on the toxic effects of CNTs to date, more studies will still be needed to gain full understanding of their potential toxicity and underlying mechanisms.

  9. Carbon nanotube biconvex microcavities

    SciTech Connect

    Butt, Haider Ahmed, Rajib; Yetisen, Ali K.; Yun, Seok Hyun; Dai, Qing

    2015-03-23

    Developing highly efficient microcavities with predictive narrow-band resonance frequencies using the least amount of material will allow the applications in nonlinear photonic devices. We have developed a microcavity array that comprised multi-walled carbon nanotubes (MWCNT) organized in a biconvex pattern. The finite element model allowed designing microcavity arrays with predictive transmission properties and assessing the effects of the microarray geometry. The microcavity array demonstrated negative index and produced high Q factors. 2–3 μm tall MWCNTs were patterned as biconvex microcavities, which were separated by 10 μm in an array. The microcavity was iridescent and had optical control over the diffracted elliptical patterns with a far-field pattern, whose properties were predicted by the model. It is anticipated that the MWCNT biconvex microcavities will have implications for the development of highly efficient lenses, metamaterial antennas, and photonic circuits.

  10. Functionalization of Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Khare, Bishun N. (Inventor); Meyyappan, Meyya (Inventor)

    2009-01-01

    Method and system for functionalizing a collection of carbon nanotubes (CNTs). A selected precursor gas (e.g., H2 or F2 or CnHm) is irradiated to provide a cold plasma of selected target species particles, such as atomic H or F, in a first chamber. The target species particles are d irected toward an array of CNTs located in a second chamber while suppressing transport of ultraviolet radiation to the second chamber. A CNT array is functionalized with the target species particles, at or below room temperature, to a point of saturation, in an exposure time interval no longer than about 30 sec. *Discrimination against non-target species is provided by (i) use of a target species having a lifetime that is much greater than a lifetime of a non-target species and/or (2) use of an applied magnetic field to discriminate between charged particle trajectories for target species and for non-target species.

  11. Carbon Nanotube based Nanotechnolgy

    NASA Astrophysics Data System (ADS)

    Meyyappan, M.

    2000-10-01

    Carbon nanotube(CNT) was discovered in the early 1990s and is an off-spring of C60(the fullerene or buckyball). CNT, depending on chirality and diameter, can be metallic or semiconductor and thus allows formation of metal-semiconductor and semiconductor-semiconductor junctions. CNT exhibits extraordinary electrical and mechanical properties and offers remarkable potential for revolutionary applications in electronics devices, computing and data storage technology, sensors, composites, storage of hydrogen or lithium for battery development, nanoelectromechanical systems(NEMS), and as tip in scanning probe microscopy(SPM) for imaging and nanolithography. Thus the CNT synthesis, characterization and applications touch upon all disciplines of science and engineering. A common growth method now is based on CVD though surface catalysis is key to synthesis, in contrast to many CVD applications common in microelectronics. A plasma based variation is gaining some attention. This talk will provide an overview of CNT properties, growth methods, applications, and research challenges and opportunities ahead.

  12. Selective functionalization of carbon nanotubes

    NASA Technical Reports Server (NTRS)

    Strano, Michael S. (Inventor); Usrey, Monica (Inventor); Barone, Paul (Inventor); Dyke, Christopher A. (Inventor); Tour, James M. (Inventor); Kittrell, W. Carter (Inventor); Hauge, Robert H. (Inventor); Smalley, Richard E. (Inventor)

    2009-01-01

    The present invention is directed toward methods of selectively functionalizing carbon nanotubes of a specific type or range of types, based on their electronic properties, using diazonium chemistry. The present invention is also directed toward methods of separating carbon nanotubes into populations of specific types or range(s) of types via selective functionalization and electrophoresis, and also to the novel compositions generated by such separations.

  13. Functional materials based on carbon nanotubes: Carbon nanotube actuators and noncovalent carbon nanotube modification

    NASA Astrophysics Data System (ADS)

    Fifield, Leonard S.

    Carbon nanotubes have attractive inherent properties that encourage the development of new functional materials and devices based on them. The use of single wall carbon nanotubes as electromechanical actuators takes advantage of the high mechanical strength, surface area and electrical conductivity intrinsic to these molecules. The work presented here investigates the mechanisms that have been discovered for actuation of carbon nanotube paper: electrostatic, quantum chemical charge injection, pneumatic and viscoelastic. A home-built apparatus for the measurement of actuation strain is developed and utilized in the investigation. An optical fiber switch, the first demonstrated macro-scale device based on the actuation of carbon nanotubes, is described and its performance evaluated. Also presented here is a new general process designed to modify the surface of carbon nanotubes in a non-covalent, non-destructive way. This method can be used to impart new functionalities to carbon nanotube samples for a variety of applications including sensing, solar energy conversion and chemical separation. The process described involves the achievement of large degrees of graphitic surface coverage with polycyclic aromatic hydrocarbons through the use of supercritical fluids. These molecules are bifunctional agents that anchor a desired chemical group to the aromatic surface of the carbon nanotubes without adversely disrupting the conjugated backbone that gives rise the attractive electronic and physical properties of the nanotubes. Both the nanotube functionalization work and the actuator work presented here emphasize how an understanding and control of nanoscale structure and phenomena can be of vital importance in achieving desired performance for active materials. Opportunities for new devices with improved function over current state-of-the-art can be envisioned and anticipated based on this understanding and control.

  14. Nanotechnology with Carbon Nanotubes: Mechanics, Chemistry, and Electronics

    NASA Technical Reports Server (NTRS)

    Srivastava, Deepak

    2003-01-01

    This viewgraph presentation reviews the Nanotechnology of carbon nanotubes. The contents include: 1) Nanomechanics examples; 2) Experimental validation of nanotubes in composites; 3) Anisotropic plastic collapse; 4) Spatio-temporal scales, yielding single-wall nanotubes; 5) Side-wall functionalization of nanotubes; 6) multi-wall Y junction carbon nanotubes; 7) Molecular electronics with Nanotube junctions; 8) Single-wall carbon nanotube junctions; welding; 9) biomimetic dendritic neurons: Carbon nanotube, nanotube electronics (basics), and nanotube junctions for Devices,

  15. Electrical and optical characterization of carbon nanotube diodes

    NASA Astrophysics Data System (ADS)

    Malapanis, Argyrios

    Carbon nanotubes are good candidates for future applications, including nanoelectronic and nanophotonic devices. Their quasi-one dimensional (1D) character offers appealing device properties. These include reduced carrier scattering, carrier mobility up to two orders of magnitude higher than that of materials used in state-of-the-art computer chips today, current densities rivaling those of the best semiconductors, enhanced optical absorption, and band gaps tunable with tube diameter and doping. Recent breakthroughs in research point to the possibility of placing nanotubes precisely on substrates with densities approaching that of transistors on today's computer chips in a way that's integratable with existing Si-based technology. Such advances may accelerate the day when high-speed and power-efficient applications using carbon nanotubes as the transistor channel can become a reality. Thus the need to explore the fundamental properties of carbon nanotubes becomes more pressing. Using single-walled carbon nanotube (SWNT) p-n diodes as the medium, the purpose of this work is to examine SWNT fundamental properties that little experimental work has dealt with measuring. These properties include the band-gap of a SWNT, band-gap renormalization (shrinkage) as a function of doping, and optical absorption in the infrared region of the spectrum. This dissertation also shows the extreme sensitivity of carbon nanotubes to their environment (i.e. exposure to air). In addition, it demonstrates a new technique---current annealing---that can reverse the degradation of the electrical and optical properties of carbon nanotube diodes due to ambient exposure

  16. Filling carbon nanotubes with particles.

    PubMed

    Kim, Byong M; Qian, Shizhi; Bau, Haim H

    2005-05-01

    The filling of carbon nanotubes (CNTs) with fluorescent particles was studied experimentally and theoretically. The fluorescent signals emitted by the particles were visible through the walls of the nanotubes, and the particles inside the tubes were observable with an electron microscope. Taking advantage of the template-grown carbon nanotubes' transparency to fluorescent light, we measured the filling rate of the tubes with particles at room conditions. Liquids such as ethylene glycol, water, and ethylene glycol/water mixtures, laden with 50 nm diameter fluorescent particles, were brought into contact with 500 nm diameter CNTs. The liquid and the particles' transport were observed, respectively, with optical and fluorescence microscopy. The CNTs were filled controllably with particles by the complementary action of capillary forces and the evaporation of the liquid. The experimental results were compared and favorably agreed with theoretical predictions. This is the first report on fluorescence studies of particle transport in carbon nanotubes.

  17. Carbon nanotube network embroidered graphene films for monolithic all-carbon electronics.

    PubMed

    Shi, Enzheng; Li, Hongbian; Yang, Long; Hou, Junfeng; Li, Yuanchang; Li, Li; Cao, Anyuan; Fang, Ying

    2015-01-27

    A unique cage growth of graphene is developed by using carbon nanotube (CNT) spider webs as porous templates, resulting in CNT/graphene hybrids with high conductivity and mechanical flexibility. Furthermore, monolithic all-carbon transistors with graphene as active elements and CNT/graphene hybrids as contacts and interconnects are directly formed by chemical synthesis, and flexible all-carbon bioelectronics are subsequently demonstrated for in vivo mapping of cardiac signals.

  18. Properties of Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Masood, Samina; Bullmore, Daniel; Duran, Michael; Jacobs, Michael

    2012-10-01

    Different synthesizing methods are used to create various nanostructures of carbon; we are mainly interested in single and multi-wall carbon nanotubes, (SWCNTs) and (MWCNTs) respectively. The properties of these tubes are related to their synthetic methods, chirality, and diameter. The extremely sturdy structure of CNTs, with their distinct thermal and electromagnetic properties, suggests a tremendous use of these tubes in electronics and medicines. Here, we analyze various physical properties of SWCNTs with a special emphasis on electromagnetic and chemical properties. By examining their electrical properties, we demonstrate the viability of discrete CNT based components. After considering the advantages of using CNTs over microstructures, we make a case for the advancement and development of nanostructures based electronics. As for current CNT applications, it's hard to overlook their use and functionality in the development of cancer treatment. Whether the tubes are involved in chemotherapeutic drug delivery, molecular imaging and targeting, or photodynamic therapy, we show that the remarkable properties of SWCNTs can be used in advantageous ways by many different industries.

  19. Carbon Nanotube Purification

    NASA Technical Reports Server (NTRS)

    Delzeit, Lance D. (Inventor); Delzeit, Clement J. (Inventor)

    2005-01-01

    A method for cleaning or otherwise removing amorphous carbon and other residues that arise in growth of a carbon nanotube (CNT) array. The CNT array is exposed to a plurality of hydroxyls or hydrogen, produced from a selected vapor or liquid source such as H2O or H2O2. and the hydroxyls or hydrogen (neutral or electrically charged) react with the residues to produce partly or fully dissolved or hydrogenated or hydroxylizated products that can be removed or separated from the CNT array. The hydroxyls or hydrogen can be produced by heating the CNT array, residue and selected vapor or liquid source or by application of an electromagnetic excitation signal with a selected frequency or range of frequencies to dissociate the selected vapor or liquid. The excitation frequency can be chirped to cover a selected range of frequencies corresponding to dissociation of the selected vapor or liquid. Sonication may be uscd to supplement dissociation of the H2O and/or H2O2.

  20. Carbon Nanotubes for Polymer Photovoltaics

    NASA Astrophysics Data System (ADS)

    Anctil, Annick; Dileo, Roberta; Schauerman, Chris; Landi, Brian; Raffaelle, Ryne

    2007-03-01

    Carbon nanotubes are being investigated for optical absorption, exciton dissociation, and carrier transport in polymer photovoltaic devices. In the present work, single wall carbon nanotubes (SWNTs) were synthesized by an Alexandrite pulsed laser vaporization reactor at standard conditions and purified based upon our previously reported TOP procedure. The SWNTs were dispersed in polymer composites for pure MEH-PPV, pure P3HT, and [C60]-PCBM-P3HT (1:1 by weight) as a function of nanotube weight loading (0.1 -- 5% w/w). The AM0 current-voltage measurements for structures sandwiched between PEDOT/PSS coated ITO substrates and an evaporated aluminum contact demonstrate the dramatic effect of SWNT content on the short circuit current density, with conversions efficiencies consistently greater than 1%. The temperature coefficient for nanotube-containing polymer photovoltaics has been compared to conventional PCBM-P3HT devices, and the general relationship of increasing efficiency with increasing temperature is observed. However, the necessity to control nanotube percolation to prevent device shunting has led to recent developments which focus on controlling nanotube length through oxidative cutting, the deposition of intrinsic polymer layers, and the use of aligned carbon nanotube arrays for preferential charge transport.

  1. Group IV nanotube transistors for next generation ubiquitous computing

    NASA Astrophysics Data System (ADS)

    Fahad, Hossain M.; Hussain, Aftab M.; Sevilla Torres, Galo A.; Banerjee, Sanjay K.; Hussain, Muhammad M.

    2014-06-01

    Evolution in transistor technology from increasingly large power consuming single gate planar devices to energy efficient multiple gate non-planar ultra-narrow (< 20 nm) fins has enhanced the scaling trend to facilitate doubling performance. However, this performance gain happens at the expense of arraying multiple devices (fins) per operation bit, due to their ultra-narrow dimensions (width) originated limited number of charges to induce appreciable amount of drive current. Additionally arraying degrades device off-state leakage and increases short channel characteristics, resulting in reduced chip level energy-efficiency. In this paper, a novel nanotube device (NTFET) topology based on conventional group IV (Si, SiGe) channel materials is discussed. This device utilizes a core/shell dual gate strategy to capitalize on the volume-inversion properties of an ultra-thin (< 10 nm) group IV nanotube channel to minimize leakage and short channel effects while maximizing performance in an area-efficient manner. It is also shown that the NTFET is capable of providing a higher output drive performance per unit chip area than an array of gate-all-around nanowires, while maintaining the leakage and short channel characteristics similar to that of a single gate-all-around nanowire, the latter being the most superior in terms of electrostatic gate control. In the age of big data and the multitude of devices contributing to the internet of things, the NTFET offers a new transistor topology alternative with maximum benefits from performance-energy efficiency-functionality perspective.

  2. Electronic Sensitivity of Carbon Nanotubes to Internal Water Wetting

    SciTech Connect

    Cao, Di; Pang, Pei; He, Jin; Luo, Tao; Park, Jae Hyun nmn; Krstic, Predrag S; Nuckolls, Colin; Tang, Jinyao; Lindsay, Stuart

    2011-01-01

    We have constructed devices in which the interior of a single-walled carbon nanotube (SWCNT) field-effect transistor acts as a nanofluidic channel that connects two fluid reservoirs, permitting measurement of the electronic properties of the SWCNT as it is wetted by an analyte. Wetting of the inside of the SWCNT by water turns the transistor on, while wetting of the outside has little effect. These observations are consistent with theoretical simulations that show that internal water both generates a large dipole electric field, causing charge polarization of the tube and metal electrodes, and shifts the valance band of the SWCNT, while external water has little effect.

  3. Probing Photosensitization by Functionalized Carbon Nanotubes

    EPA Science Inventory

    Carbon nanotubes (CNTs) photosensitize the production of reactive oxygen species that can damage organisms by biomembrane oxidation or mediate CNTs' environmental transformations. The photosensitized nature of derivatized carbon nanotubes from various synthetic methods, and thus ...

  4. Occupational Exposure to Carbon Nanotubes and Nanofibers

    MedlinePlus

    ... Current Intelligence Bulletin 65: Occupational Exposure to Carbon Nanotubes and Nanofibers Recommend on Facebook Tweet Share Compartir ... composed of engineered nanoparticles, such as metal oxides, nanotubes, nanowires, quantum dots, and carbon fullerenes (buckyballs), among ...

  5. Carbon nanotube macroelectronics: toward system-on-plastic

    NASA Astrophysics Data System (ADS)

    Wang, Chuan; Takei, Kuniharu; Takahashi, Toshitakei; Javey, Ali

    2013-05-01

    We report solution-based processing of high-purity semiconducting carbon nanotube networks that has led to low-cost fabrication of large quantity of thin-film transistors (TFTs) with excellent yield and highly uniform, respectable performance on mechanically flexible substrates. Based on the semiconducting carbon nanotube TFTs, a wide range of macro-scale system-level electronics have been demonstrated including flexible integrated circuits, flexible full-color active-matrix organic light-emitting diode display, and smart interactive skin sensor that can simultaneously map and respond to the outside stimulus. Our work shows carbon nanotubes' immense promise as a low-cost and scalable TFT technology for nonconventional electronic systems with excellent performances.

  6. Carbon Nanotube Based Molecular Electronics

    NASA Technical Reports Server (NTRS)

    Srivastava, Deepak; Saini, Subhash; Menon, Madhu

    1998-01-01

    Carbon nanotubes and the nanotube heterojunctions have recently emerged as excellent candidates for nanoscale molecular electronic device components. Experimental measurements on the conductivity, rectifying behavior and conductivity-chirality correlation have also been made. While quasi-one dimensional simple heterojunctions between nanotubes with different electronic behavior can be generated by introduction of a pair of heptagon-pentagon defects in an otherwise all hexagon graphene sheet. Other complex 3- and 4-point junctions may require other mechanisms. Structural stability as well as local electronic density of states of various nanotube junctions are investigated using a generalized tight-binding molecular dynamics (GDBMD) scheme that incorporates non-orthogonality of the orbitals. The junctions investigated include straight and small angle heterojunctions of various chiralities and diameters; as well as more complex 'T' and 'Y' junctions which do not always obey the usual pentagon-heptagon pair rule. The study of local density of states (LDOS) reveal many interesting features, most prominent among them being the defect-induced states in the gap. The proposed three and four pointjunctions are one of the smallest possible tunnel junctions made entirely of carbon atoms. Furthermore the electronic behavior of the nanotube based device components can be taylored by doping with group III-V elements such as B and N, and BN nanotubes as a wide band gap semiconductor has also been realized in experiments. Structural properties of heteroatomic nanotubes comprising C, B and N will be discussed.

  7. Multiscale Modeling with Carbon Nanotubes

    SciTech Connect

    Maiti, A

    2006-02-21

    Technologically important nanomaterials come in all shapes and sizes. They can range from small molecules to complex composites and mixtures. Depending upon the spatial dimensions of the system and properties under investigation computer modeling of such materials can range from equilibrium and nonequilibrium Quantum Mechanics, to force-field-based Molecular Mechanics and kinetic Monte Carlo, to Mesoscale simulation of evolving morphology, to Finite-Element computation of physical properties. This brief review illustrates some of the above modeling techniques through a number of recent applications with carbon nanotubes: nano electromechanical sensors (NEMS), chemical sensors, metal-nanotube contacts, and polymer-nanotube composites.

  8. Removal of some impurities from carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Feng, Yongcheng; Zhou, Gumin; Wang, Guoping; Qu, Meizhen; Yu, Zuolong

    2003-07-01

    A non-destructive mild oxidation method of removing some impurities from as-grown carbon nanotubes (CNTs), including single-wall carbon nanotubes (SWNTs) and multi-wall carbon nanotubes (MWNTs), by H 2O 2 oxidation and HCl treatment, has been investigated, and somewhat pure carbon nanotubes have been prepared. The CNTs from which some impurities were removed have been evaluated by transmission electron microscopy (TEM) and temperature programmed oxidation and gas chromatography (TPO-GC).

  9. Directed Growth of Carbon Nanotubes Across Gaps

    NASA Technical Reports Server (NTRS)

    Delzeit, Lance; Meyyapan, Meyya

    2008-01-01

    An experiment has shown that when single-walled carbon nanotubes (SWNTs) are grown by chemical vapor deposition in the presence of an electric field of suitable strength, the nanotubes become aligned along the electric field. In an important class of contemplated applications, one would exploit this finding in fabricating nanotube transistors; one would grow SWNTs across gaps between electrodes that would serve, subsequently, as source and drain contacts during operation of the transistors. In preparation for the experiment, a multilayer catalyst comprising a 20-nmthick underlayer of iridium (platinum group), a 1-nm-thick middle layer of iron, and a 0.2-nm-thick outer layer of molybdenum was ion-beam sputtered onto a quartz substrate. A 25 micrometers-diameter iron wire was used as a shadow mask during the sputtering to create a 25 micrometers gap in the catalyst. Then electrical leads were connected to the catalyst areas separated by the gap so that these catalyst areas would also serve as electrodes. The substrate as thus prepared was placed in a growth chamber that consisted of a quartz tube of 1-in. (2.54-cm) diameter enclosed in a furnace. SWNTs of acceptably high quantity and quality were grown in 10 minutes with methane at atmospheric pressure flowing through the chamber at a rate of 1,000 standard cubic centimeters per minute at a temperature of 900 C. To prevent oxidation of the SWNTs, the chamber was purged with 99.999-percent pure argon before and after growth, and the chamber was cooled to less than 300 C before opening it to the atmosphere after growth. When no voltage was applied across the gap, the SWNTs grew in random directions extending out from the edges of the catalyst at the gap. When a potential of 10 V was applied between the catalyst/electrode areas to create an electric field across the gap, the SWNTs grew across the gap, as shown in the figure.

  10. EDITORIAL: Focus on Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    2003-09-01

    The study of carbon nanotubes, since their discovery by Iijima in 1991, has become a full research field with significant contributions from all areas of research in solid-state and molecular physics and also from chemistry. This Focus Issue in New Journal of Physics reflects this active research, and presents articles detailing significant advances in the production of carbon nanotubes, the study of their mechanical and vibrational properties, electronic properties and optical transitions, and electrical and transport properties. Fundamental research, both theoretical and experimental, represents part of this progress. The potential applications of nanotubes will rely on the progress made in understanding their fundamental physics and chemistry, as presented here. We believe this Focus Issue will be an excellent guide for both beginners and experts in the research field of carbon nanotubes. It has been a great pleasure to edit the many excellent contributions from Europe, Japan, and the US, as well from a number of other countries, and to witness the remarkable effort put into the manuscripts by the contributors. We thank all the authors and referees involved in the process. In particular, we would like to express our gratitude to Alexander Bradshaw, who invited us put together this Focus Issue, and to Tim Smith and the New Journal of Physics staff for their extremely efficient handling of the manuscripts. Focus on Carbon Nanotubes Contents <;A article="1367-2630/5/1/117">Transport theory of carbon nanotube Y junctions R Egger, B Trauzettel, S Chen and F Siano The tubular conical helix of graphitic boron nitride F F Xu, Y Bando and D Golberg Formation pathways for single-wall carbon nanotube multiterminal junctions Inna Ponomareva, Leonid A Chernozatonskii, Antonis N Andriotis and Madhu Menon Synthesis and manipulation of carbon nanotubes J W Seo, E Couteau

  11. EDITORIAL: Focus on Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    2003-09-01

    The study of carbon nanotubes, since their discovery by Iijima in 1991, has become a full research field with significant contributions from all areas of research in solid-state and molecular physics and also from chemistry. This Focus Issue in New Journal of Physics reflects this active research, and presents articles detailing significant advances in the production of carbon nanotubes, the study of their mechanical and vibrational properties, electronic properties and optical transitions, and electrical and transport properties. Fundamental research, both theoretical and experimental, represents part of this progress. The potential applications of nanotubes will rely on the progress made in understanding their fundamental physics and chemistry, as presented here. We believe this Focus Issue will be an excellent guide for both beginners and experts in the research field of carbon nanotubes. It has been a great pleasure to edit the many excellent contributions from Europe, Japan, and the US, as well from a number of other countries, and to witness the remarkable effort put into the manuscripts by the contributors. We thank all the authors and referees involved in the process. In particular, we would like to express our gratitude to Alexander Bradshaw, who invited us put together this Focus Issue, and to Tim Smith and the New Journal of Physics staff for their extremely efficient handling of the manuscripts. Focus on Carbon Nanotubes Contents Transport theory of carbon nanotube Y junctions R Egger, B Trauzettel, S Chen and F Siano The tubular conical helix of graphitic boron nitride F F Xu, Y Bando and D Golberg Formation pathways for single-wall carbon nanotube multiterminal junctions Inna Ponomareva, Leonid A Chernozatonskii, Antonis N Andriotis and Madhu Menon Synthesis and manipulation of carbon nanotubes J W Seo, E Couteau, P Umek, K Hernadi, P Marcoux, B Lukic, Cs Mikó, M Milas, R Gaál and L Forró Transitional behaviour in the transformation from active end

  12. Large-Scale Processing of Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Finn, John; Sridhar, K. R.; Meyyappan, M.; Arnold, James O. (Technical Monitor)

    1998-01-01

    Scale-up difficulties and high energy costs are two of the more important factors that limit the availability of various types of nanotube carbon. While several approaches are known for producing nanotube carbon, the high-powered reactors typically produce nanotubes at rates measured in only grams per hour and operate at temperatures in excess of 1000 C. These scale-up and energy challenges must be overcome before nanotube carbon can become practical for high-consumption structural and mechanical applications. This presentation examines the issues associated with using various nanotube production methods at larger scales, and discusses research being performed at NASA Ames Research Center on carbon nanotube reactor technology.

  13. Dispersions of Carbon nanotubes in Polymer Matrices

    NASA Technical Reports Server (NTRS)

    Wise, Kristopher Eric (Inventor); Park, Cheol (Inventor); Siochi, Emilie J. (Inventor); Harrison, Joycelyn S. (Inventor); Lillehei, Peter T. (Inventor); Lowther, Sharon E. (Inventor)

    2010-01-01

    Dispersions of carbon nanotubes exhibiting long term stability are based on a polymer matrix having moieties therein which are capable of a donor-acceptor complexation with carbon nanotubes. The carbon nanotubes are introduced into the polymer matrix and separated therein by standard means. Nanocomposites produced from these dispersions are useful in the fabrication of structures, e.g., lightweight aerospace structures.

  14. Improving Ambipolar Charge Injection in Polymer FETs with Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Zaumseil, Jana

    2013-03-01

    Efficient charge injection is a key issue for organic field-effect transistors (FET). Various methods can be used to optimize injection of either holes or electrons, for example, by modifying the workfunction of metallic electrodes with self-assembled monolayers. For ambipolar FETs this is much more difficult because injection of both charge carriers has to be improved at the same time. Here we demonstrate a simple process to significantly improve ambipolar charge injection in bottom contact/top gate polymer field-effect transistors by adding single-walled carbon nanotubes (SWNT) to the semiconducting polymer at concentrations well below the percolation limit. Such polymer/carbon nanotube hybrid systems are easily produced by ultrasonication and dispersion of SWNT in a conjugated polymer solution. Even at very low nanotube concentrations the charge injection of both holes and electrons, for example, into poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) and poly(9,9-dioctylfluorene) (PFO) is significantly enhanced leading to lower contact resistances and threshold voltages than in FETs with pristine polymer films. This method can be extended to other semiconductors like n-type naphthalene-bis(dicarboximide)-based polymers (e.g. P(NDI2OD-T2)) for which hole injection was greatly enhanced. The proposed mechanism for this effect of carbon nanotubes on injection is independent of the polarity of the charge carriers. It can be maximized by patterning layers of pure carbon nanotubes onto the injecting electrodes before spincoating the pristine polymers leading to almost ohmic contacts for polymers, which usually show only strongly Schottky-barrier-limited injection. This improved injection of holes and electrons allows for a wider range of accessible polymers for ambipolar and thus also light-emitting transistors.

  15. Hydrodynamic properties of carbon nanotubes.

    PubMed

    Walther, J H; Werder, T; Jaffe, R L; Koumoutsakos, P

    2004-06-01

    We study water flowing past an array of single walled carbon nanotubes using nonequilibrium molecular dynamics simulations. For carbon nanotubes mounted with a tube spacing of 16.4 x 16.4 nm and diameters of 1.25 and 2.50 nm, respectively, we find drag coefficients in reasonable agreement with the macroscopic, Stokes-Oseen solution. The slip length is -0.11 nm for the 1.25 nm carbon nanotube, and 0.49 for the 2.50 nm tube for a flow speed of 50 m/s, respectively, and 0.28 nm for the 2.50 nm tube at 200 m/s. A slanted flow configuration with a stream- and spanwise velocity component of 100 ms(-1) recovers the two-dimensional results, but exhibits a significant 88 nm slip along the axis of the tube. These results indicate that slip depends on the particular flow configuration.

  16. Carbon nanotube-polymer composite actuators

    DOEpatents

    Gennett, Thomas; Raffaelle, Ryne P.; Landi, Brian J.; Heben, Michael J.

    2008-04-22

    The present invention discloses a carbon nanotube (SWNT)-polymer composite actuator and method to make such actuator. A series of uniform composites was prepared by dispersing purified single wall nanotubes with varying weight percents into a polymer matrix, followed by solution casting. The resulting nanotube-polymer composite was then successfully used to form a nanotube polymer actuator.

  17. Design considerations and emerging challenges for nanotube-, nanowire-, and negative capacitor-field effect transistors

    NASA Astrophysics Data System (ADS)

    Wahab, Md. Abdul

    As the era of classical planar metal-oxide-semiconductor field-effect transistors (MOSFETs) comes to an end, the semiconductor industry is beginning to adopt 3D device architectures, such as FinFETs, starting at the 22 nm technology node. Since physical limits such as short channel effect (SCE) and self-heating may dominate, it may be difficult to scale Si FinFET below 10 nm. In this regard, transistors with different materials, geometries, or operating principles may help. For example, gate has excellent electrostatic control over 2D thin film channel with planar geometry, and 1D nanowire (NW) channel with gate-all-around (GAA) geometry to reduce SCE. High carrier mobility of single wall carbon nanotube (SWNT) or III-V channels may reduce VDD to reduce power consumption. Therefore, as channel of transistor, 2D thin film of array SWNTs and 1D III-V multi NWs are promising for sub 10 nm technology nodes. In this thesis, we analyze the potential of these transistors from process, performance, and reliability perspectives. For SWNT FETs, we discuss a set of challenges (such as how to (i) characterize diameter distribution, (ii) remove metallic (m)-SWNTs, and (iii) avoid electrostatic cross-talk among the neighboring SWNTs), and demonstrate solution strategies both theoretically and experimentally. Regarding self-heating in these new class of devices (SWNT FET and GAA NW FET including state-of-the-art FinFET), higher thermal resistance from poor thermal conducting oxides results significant temperature rise, and reduces the IC life-time. For GAA NW FETs, we discuss accurate self-heating evaluation with good spatial, temporal, and thermal resolutions. The introduction of negative capacitor (NC), as gate dielectric stack of transistor, allows sub 60 mV/dec operation to reduce power consumption significantly. Taken together, our work provides a comprehensive perspective regarding the challenges and opportunities of sub 10 nm technology nodes.

  18. Gears Based on Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Jaffe, Richard; Han, Jie; Globus, Al; Deardorff, Glenn

    2005-01-01

    Gears based on carbon nanotubes (see figure) have been proposed as components of an emerging generation of molecular- scale machines and sensors. In comparison with previously proposed nanogears based on diamondoid and fullerene molecules, the nanotube-based gears would have simpler structures and are more likely to be realizable by practical fabrication processes. The impetus for the practical development of carbon-nanotube- based gears arises, in part, from rapid recent progress in the fabrication of carbon nanotubes with prescribed diameters, lengths, chiralities, and numbers of concentric shells. The shafts of the proposed gears would be made from multiwalled carbon nanotubes. The gear teeth would be rigid molecules (typically, benzyne molecules), bonded to the nanotube shafts at atomically precise positions. For fabrication, it may be possible to position the molecular teeth by use of scanning tunneling microscopy (STM) or other related techniques. The capability to position individual organic molecules at room temperature by use of an STM tip has already been demonstrated. Routes to the chemical synthesis of carbon-nanotube-based gears are also under investigation. Chemical and physical aspects of the synthesis of molecular scale gears based on carbon nanotubes and related molecules, and dynamical properties of nanotube- based gears, have been investigated by computational simulations using established methods of quantum chemistry and molecular dynamics. Several particularly interesting and useful conclusions have been drawn from the dynamical simulations performed thus far: The forces acting on the gears would be more sensitive to local molecular motions than to gross mechanical motions of the overall gears. Although no breakage of teeth or of chemical bonds is expected at temperatures up to at least 3,000 K, the gears would not work well at temperatures above a critical range from about 600 to about 1,000 K. Gear temperature could probably be controlled by

  19. CMOS Integrated Carbon Nanotube Sensor

    SciTech Connect

    Perez, M. S.; Lerner, B.; Boselli, A.; Lamagna, A.; Obregon, P. D. Pareja; Julian, P. M.; Mandolesi, P. S.; Buffa, F. A.

    2009-05-23

    Recently carbon nanotubes (CNTs) have been gaining their importance as sensors for gases, temperature and chemicals. Advances in fabrication processes simplify the formation of CNT sensor on silicon substrate. We have integrated single wall carbon nanotubes (SWCNTs) with complementary metal oxide semiconductor process (CMOS) to produce a chip sensor system. The sensor prototype was designed and fabricated using a 0.30 um CMOS process. The main advantage is that the device has a voltage amplifier so the electrical measure can be taken and amplified inside the sensor. When the conductance of the SWCNTs varies in response to media changes, this is observed as a variation in the output tension accordingly.

  20. Magnetoresistance of multiwall carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Lu, Li; Kang, N.; Kong, W. J.; Hu, J. S.; Pan, Z. W.; Xie, S. S.

    2002-03-01

    We have investigated the magnetoresistance of multiwall carbon nanotubes bundles. At temperatures above 15 K, the magnetoresistance was found to follow exactly a scaling law as predicted by the theory of two-dimensional (2D) weak localization. Below 15 K, the 2D weak localization behavior is modified due to the formation of a Coulomb gap. This modification does not fit to those theories which treat electron-electron interaction as a perturbation. Altshular-Aronov-Spivak (AAS) resistance oscillation was observed in milli-Kelvin temperature range. The results will be discussed in terms of the interplay between electron-electron interaction and disorder scattering in multiwall carbon nanotube.

  1. Modified carbon nanotubes and methods of forming carbon nanotubes

    DOEpatents

    Heintz, Amy M.; Risser, Steven; Elhard, Joel D.; Moore, Bryon P.; Liu, Tao; Vijayendran, Bhima R.

    2016-06-14

    In this invention, processes which can be used to achieve stable doped carbon nanotubes are disclosed. Preferred CNT structures and morphologies for achieving maximum doping effects are also described. Dopant formulations and methods for achieving doping of a broad distribution of tube types are also described.

  2. Observation of Unidirectional Current Rectification and AC-to-DC Power Conversion by As-Grown Single-Walled Carbon Nanotube Transistors

    DTIC Science & Technology

    2008-12-01

    irregularities and possibly due to change in the chirality of a single tube. Utilizing the fabricated SWNT FETs for the first time, a nanoscale AC-to...al., 2000, Lee et al., 2004). Theoretical predictions suggest the cross or Y-type junctions, atomic defect, and/or changes in chirality along...property due to the hybrid chirality of single tubes. The electronic structure of the nanotubes depend on their diameter and helicity (Saito et. al

  3. Gate-voltage induced trions in suspended carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Yoshida, Masahiro; Popert, Alexander; Kato, Yuichiro K.

    We observe trion emission from suspended carbon nanotubes where carriers are introduced electrostatically using field-effect transistor structures. The trion peak emerges below the E11 emission energy at gate voltages that coincide with the onset of bright exciton quenching. By investigating nanotubes with various chiralities, we verify that the energy separation between the bright exciton peak and the trion peak becomes smaller for larger diameter tubes. Trion binding energies that are significantly larger compared to surfactant-wrapped carbon nanotubes are obtained, and the difference is attributed to the reduced dielectric screening in suspended tubes. Work supported by JSPS (KAKENHI 24340066), the Canon Foundation, the Sasakawa Scientific Research Grant, and MEXT (Photon Frontier Network Program, Nanotechnology Platform). M.Y. is supported by ALPS.

  4. Effect of Carbon Nanotubes on Mammalian Cells

    NASA Astrophysics Data System (ADS)

    Chen, Michelle; Ahmed, Asma; Black, Melanie; Kawamoto, Nicole; Lucas, Jessica; Pagala, Armie; Pham, Tram; Stankiewicz, Sara; Chen, Howard

    2010-03-01

    Carbon Nanotubes possess extraordinary electrical, mechanical, and thermal properties. Research on applying the carbon nanotubes for ultrasensitive detection, disease diagnosis, and drug delivery is rapidly developing. While the fundamental and technological findings on carbon nanotubes show great promise, it is extremely important to investigate the effect of the carbon nanotubes on human health. In our experiments, we introduce purified carbon nanotubes in suspension to ovary cells cultured from Hamsters. These cells are chosen since they show robust morphological changes associated with cytotoxicity that can easily be observed under a light microscope. We will discuss the toxicity of carbon nanotubes by characterizing the cell morphology and viability as a function of time and the concentration of carbon nanotube suspension.

  5. Carbon Nanotube Material Quality Assessment

    NASA Technical Reports Server (NTRS)

    Yowell, Leonard; Arepalli, Sivaram; Sosa, Edward; Niolaev, Pavel; Gorelik, Olga

    2006-01-01

    The nanomaterial activities at NASA Johnson Space Center focus on carbon nanotube production, characterization and their applications for aerospace systems. Single wall carbon nanotubes are produced by arc and laser methods. Characterization of the nanotube material is performed using the NASA JSC protocol developed by combining analytical techniques of SEM, TEM, UV-VIS-NIR absorption, Raman, and TGA. A possible addition of other techniques such as XPS, and ICP to the existing protocol will be discussed. Changes in the quality of the material collected in different regions of the arc and laser production chambers is assessed using the original JSC protocol. The observed variations indicate different growth conditions in different regions of the production chambers.

  6. Conductance Oscillations in Squashed Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Mehrez, H.; Anantram, M. P.; Svizhenko, A.

    2003-01-01

    A combination of molecular dynamics and electrical conductance calculations are used to probe the electromechanical properties of squashed metallic carbon nanotubes. We find that the conductance and bandgap of armchair nanotubes show oscillations upon squashing. The physical origin of these oscillations is attributed to interaction of carbon atoms with a fourth neighbor. Squashing of armchair and zigzag nanotubes ultimately leads to metallic behavior.

  7. Terahertz detection and carbon nanotubes

    SciTech Connect

    Leonard, Francois

    2014-06-11

    Researchers at Sandia National Laboratories, along with collaborators from Rice University and the Tokyo Institute of Technology, are developing new terahertz detectors based on carbon nanotubes that could lead to significant improvements in medical imaging, airport passenger screening, food inspection and other applications.

  8. Terahertz detection and carbon nanotubes

    ScienceCinema

    Leonard, Francois

    2016-07-12

    Researchers at Sandia National Laboratories, along with collaborators from Rice University and the Tokyo Institute of Technology, are developing new terahertz detectors based on carbon nanotubes that could lead to significant improvements in medical imaging, airport passenger screening, food inspection and other applications.

  9. Carbon Nanotubes and Human Cells?

    ERIC Educational Resources Information Center

    King, G. Angela

    2005-01-01

    Single-walled carbon nanotubes that were chemically altered to be water soluble are shown to enter fibroblasts, T cells, and HL60 cells. Nanoparticles adversely affect immortalized HaCaT human keratinocyte cultures, indicating that they may enter cells.

  10. Thermoelectrics: Carbon nanotubes get high

    NASA Astrophysics Data System (ADS)

    Crispin, Xavier

    2016-04-01

    Waste heat can be converted to electricity by thermoelectric generators, but their development is hindered by the lack of cheap materials with good thermoelectric properties. Now, carbon-nanotube-based materials are shown to have improved properties when purified to contain only semiconducting species and then doped.

  11. Conductance of Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Datta, Supriyo; Anatram, M. P.

    1998-01-01

    The recent report of quantized conductance in a 4 m long multiwalled nanotube (MWNT) raises the exciting possibility of ballistic transport at room temperature over relatively long distances. We argue that this is made possible by the special symmetry of the eigenstates of the lowest propagating modes in metallic nanotubes which suppresses backscattering. This unusual effect is absent for the higher propagating modes so that transport is not ballistic once the bias exceeds the cut-off energy for the higher modes, which is estimated to be approximately 75 meV for nanotubes of diameter approximately 15 nm. Also, we show that the symmetry of the eigenstates can significantly affect their coupling to the reservoir and hence the contact resistance. A simple model is presented that can be used to understand the observed conductance-voltage characteristics.

  12. Nanopattern formation using localized plasma for growth of single-standing carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Javadi, Mohammad; Abdi, Yaser

    2017-01-01

    We report a novel method for formation of self-organized single-standing carbon nanotubes by customizing a plasma-based process. The growth of carbon nanotubes by plasma-enhanced chemical vapor deposition provides suitable grounds to utilize plasma-solid interactions for nanopatterning. The bulk plasma is utilized to fabricate carbon nanotubes on the prepatterned Ni catalyst which in turn can confine the plasma to the growth region. The plasma localization leads to a dielectrophoretic force exerted on Ni atoms and can be engineered in order to grow a specific pattern of self-organized single-standing carbon nanotubes. Numerical simulations based on the plasma localization and dielectrophoretic force confirmed the experimental results. This method provides a simple and cost-effective approach to obtain nanopatterned arrays of carbon nanotubes which can be used for fabrication of photonic and phononic crystals, self-gated field emission-based transistors and displays.

  13. LDRD final report : chromophore-functionalized aligned carbon nanotube arrays.

    SciTech Connect

    Vance, Andrew L.; Yang, Chu-Yeu Peter; Krafcik, Karen Lee

    2011-09-01

    The goal of this project was to expand upon previously demonstrated single carbon nanotube devices by preparing a more practical, multi-single-walled carbon nanotube (SWNT) device. As a late-start, proof-of-concept project, the work focused on the fabrication and testing of chromophore-functionalized aligned SWNT field effect transistors (SWNT-FET). Such devices have not yet been demonstrated. The advantages of fabricating aligned SWNT devices include increased device cross-section to improve sensitivity to light, elimination of increased electrical resistance at nanotube junctions in random mat devices, and the ability to model device responses. The project did not achieve the goal of fabricating and testing chromophore-modified SWNT arrays, but a new SWNT growth capability was established that will benefit future projects. Although the ultimate goal of fabricating and testing chromophore-modified SWNT arrays was not achieved, the work did lead to a new carbon nanotube growth capability at Sandia/CA. The synthesis of dense arrays of horizontally aligned SWNTs is a developing area of research with significant potential for new discoveries. In particular, the ability to prepare arrays of carbon nanotubes of specific electronic types (metallic or semiconducting) could yield new classes of nanoscale devices.

  14. Peel test of spinnable carbon nanotube webs

    NASA Astrophysics Data System (ADS)

    Khandoker, Noman; Hawkins, Stephen C.; Ibrahim, Raafat; Huynh, Chi P.

    2014-06-01

    This paper presents results of peel tests with spinnable carbon nanotube webs. Peel tests were performed to study the effect of orientation angles on interface energies between nanotubes. In absence of any binding agent the interface energy represents the Van Der Waals energies between the interacting nanotubes. Therefore, the effect of the orientations on Van Der Waals energies between carbon nanotubes is obtained through the peel test. It is shown that the energy for crossed nanotubes at 90° angle is lower than the energy for parallel nanotubes at 0° angle. This experimental observation was validated by hypothetical theoretical calculations.

  15. Arrays of single-walled carbon nanotubes with full surface coverage for high-performance electronics.

    PubMed

    Cao, Qing; Han, Shu-jen; Tulevski, George S; Zhu, Yu; Lu, Darsen D; Haensch, Wilfried

    2013-03-01

    Single-walled carbon nanotubes have exceptional electronic properties and have been proposed as a replacement for silicon in applications such as low-cost thin-film transistors and high-performance logic devices. However, practical devices will require dense, aligned arrays of electronically pure nanotubes to optimize performance, maximize device packing density and provide sufficient drive current (or power output) for each transistor. Here, we show that aligned arrays of semiconducting carbon nanotubes can be assembled using the Langmuir-Schaefer method. The arrays have a semiconducting nanotube purity of 99% and can fully cover a surface with a nanotube density of more than 500 tubes/µm. The nanotube pitch is self-limited by the diameter of the nanotube plus the van der Waals separation, and the intrinsic mobility of the nanotubes is preserved after array assembly. Transistors fabricated using this approach exhibit significant device performance characteristics with a drive current density of more than 120 µA µm(-1), transconductance greater than 40 µS µm(-1) and on/off ratios of ∼1 × 10(3).

  16. Carbon nanotubes by the metallocene route

    NASA Astrophysics Data System (ADS)

    Sen, Rahul; Govindaraj, A.; Rao, C. N. R.

    1997-03-01

    Pyrolysis of metallocenes such as ferrocene, cobaltocene and nickelocene, is shown to yield carbon nanotubes and metal-filled onion-like structures. Pyrolysis of benzene in the presence of a metallocene gives high yields of nanotubes, the wall thickness of the nanotubes depending on the metallocene content. Pyrolysis of benzene in the absence of any metal however gives monodispersed nanospheres of carbon rather than nanotubes.

  17. Carbon nanotubes and graphene towards soft electronics

    NASA Astrophysics Data System (ADS)

    Chae, Sang Hoon; Lee, Young Hee

    2014-04-01

    Although silicon technology has been the main driving force for miniaturizing device dimensions to improve cost and performance, the current application of Si to soft electronics (flexible and stretchable electronics) is limited due to material rigidity. As a result, various prospective materials have been proposed to overcome the rigidity of conventional Si technology. In particular, nano-carbon materials such as carbon nanotubes (CNTs) and graphene are promising due to outstanding elastic properties as well as an excellent combination of electronic, optoelectronic, and thermal properties compared to conventional rigid silicon. The uniqueness of these nano-carbon materials has opened new possibilities for soft electronics, which is another technological trend in the market. This review covers the recent progress of soft electronics research based on CNTs and graphene. We discuss the strategies for soft electronics with nano-carbon materials and their preparation methods (growth and transfer techniques) to devices as well as the electrical characteristics of transparent conducting films (transparency and sheet resistance) and device performances in field effect transistor (FET) (structure, carrier type, on/off ratio, and mobility). In addition to discussing state of the art performance metrics, we also attempt to clarify trade-off issues and methods to control the trade-off on/off versus mobility). We further demonstrate accomplishments of the CNT network in flexible integrated circuits on plastic substrates that have attractive characteristics. A future research direction is also proposed to overcome current technological obstacles necessary to realize commercially feasible soft electronics.

  18. High performance thin film transistors based on regioregular poly(3-dodecylthiophene)-sorted large diameter semiconducting single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Wang, Chao; Qian, Long; Xu, Wenya; Nie, Shuhong; Gu, Weibing; Zhang, Jianhui; Zhao, Jianwen; Lin, Jian; Chen, Zheng; Cui, Zheng

    2013-05-01

    In this work, a simple and rapid method to selectively sort semiconducting-SWCNTs (sc-SWCNTs) with large diameters using regioregular poly(3-dodecylthiophene) (rr-P3DDT) is presented. The absorption spectra and Raman spectra demonstrated that metallic species of arc discharge SWCNTs were effectively removed after interaction with rr-P3DDT in toluene with the aid of sonication and centrifugation. The sorted sc-SWCNT inks have been directly used to fabricate thin film transistors (TFTs) by dip-coating, drop-casting and inkjet printing. TFTs with an effective mobility of ~34 cm2 V-1 s-1 and on-off ratios of ~107 have been achieved by dip coating and drop casting the ink on SiO2/Si substrates with pre-patterned interdigitated gold electrode arrays. The printed devices also showed excellent electrical properties with a mobility of up to 6.6 cm2 V-1 s-1 and on-off ratios of up to 105. Printed inverters based on the TFTs have been constructed on glass substrates, showing a maximum voltage gain of 112 at a Vdd of -5 V. This work paves the way for making printable logic circuits for real applications.In this work, a simple and rapid method to selectively sort semiconducting-SWCNTs (sc-SWCNTs) with large diameters using regioregular poly(3-dodecylthiophene) (rr-P3DDT) is presented. The absorption spectra and Raman spectra demonstrated that metallic species of arc discharge SWCNTs were effectively removed after interaction with rr-P3DDT in toluene with the aid of sonication and centrifugation. The sorted sc-SWCNT inks have been directly used to fabricate thin film transistors (TFTs) by dip-coating, drop-casting and inkjet printing. TFTs with an effective mobility of ~34 cm2 V-1 s-1 and on-off ratios of ~107 have been achieved by dip coating and drop casting the ink on SiO2/Si substrates with pre-patterned interdigitated gold electrode arrays. The printed devices also showed excellent electrical properties with a mobility of up to 6.6 cm2 V-1 s-1 and on-off ratios of up to 105

  19. The effects of local chemistry on the growth and electronic properties of carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Simmons, Jason M.

    Though carbon nanotubes have been actively studied for fifteen years, their interaction with their local environment is still an active area of research. Since every atom in a single-walled nanotube is a surface atom, changes in the local chemistry can have large effects on nanotube properties. This feature has been exploited in a number of attempts at using nanotubes for various sensor applications, but it is important for every application, from transistors to composites. Nanotubes will always feel their environment; and environmental effects must be understood in order to control them. In the course of this thesis research, I have investigated local chemical effects on the growth and properties of single-walled carbon nanotubes. During the catalytic growth of carbon nanotubes, the transition metal catalyst must remain active. Interactions with the substrate, particularly silicon, can lead to non-catalytic compounds that prevent nanotube growth. By controlling the thickness of the silicon dioxide diffusion barrier, high yield nanotube growth from iron catalysts can be achieved on ultra-thin (>4 nm) oxides. Once the nanotube is placed into an electronic device, local chemistry can again affect the nanotube properties. Using ozone oxidation as a model for covalent functionalization, I show that the disruption of the conjugated pi band in the nanotube lattice leads to drastic reductions in the conductivity. Though there are a large number of other potential causes for the conductivity reduction; the use of several experimental techniques, from electrical transport to optical and electron spectroscopies, enables each of them to be excluded as the dominant processes. The conductivity in a nanotube transistor can also be controlled by the local chemistry. This is demonstrated by functionalizing nanotube transistors with an organic chromophore. Photoisomerization of the chromophore changes the molecular dipole moments and causes a change in the local electrostatic

  20. Carbon-Nanotube Schottky Diodes

    NASA Technical Reports Server (NTRS)

    Manohara, Harish; Wong, Eric; Schlecht, Erich; Hunt, Brian; Siegel, Peter

    2006-01-01

    Schottky diodes based on semiconducting single-walled carbon nanotubes are being developed as essential components of the next generation of submillimeter-wave sensors and sources. Initial performance predictions have shown that the performance characteristics of these devices can exceed those of the state-of-the-art solid-state Schottky diodes that have been the components of choice for room-temperature submillimeter-wave sensors for more than 50 years. For state-of-the-art Schottky diodes used as detectors at frequencies above a few hundred gigahertz, the inherent parasitic capacitances associated with their semiconductor junction areas and the resistances associated with low electron mobilities limit achievable sensitivity. The performance of such a detector falls off approximately exponentially with frequency above 500 GHz. Moreover, when used as frequency multipliers for generating signals, state-of-the-art solid-state Schottky diodes exhibit extremely low efficiencies, generally putting out only micro-watts of power at frequencies up to 1.5 THz. The shortcomings of the state-of-the-art solid-state Schottky diodes can be overcome by exploiting the unique electronic properties of semiconducting carbon nanotubes. A single-walled carbon nanotube can be metallic or semiconducting, depending on its chirality, and exhibits high electron mobility (recently reported to be approx.= 2x10(exp 5)sq cm/V-s) and low parasitic capacitance. Because of the narrowness of nanotubes, Schottky diodes based on carbon nanotubes have ultra-small junction areas (of the order of a few square nanometers) and consequent junction capacitances of the order of 10(exp -18) F, which translates to cutoff frequency >5 THz. Because the turn-on power levels of these devices are very low (of the order of nano-watts), the input power levels needed for pumping local oscillators containing these devices should be lower than those needed for local oscillators containing state-of-the-art solid

  1. High performance thin film transistors based on regioregular poly(3-dodecylthiophene)-sorted large diameter semiconducting single-walled carbon nanotubes.

    PubMed

    Wang, Chao; Qian, Long; Xu, Wenya; Nie, Shuhong; Gu, Weibing; Zhang, Jianhui; Zhao, Jianwen; Lin, Jian; Chen, Zheng; Cui, Zheng

    2013-05-21

    In this work, a simple and rapid method to selectively sort semiconducting-SWCNTs (sc-SWCNTs) with large diameters using regioregular poly(3-dodecylthiophene) (rr-P3DDT) is presented. The absorption spectra and Raman spectra demonstrated that metallic species of arc discharge SWCNTs were effectively removed after interaction with rr-P3DDT in toluene with the aid of sonication and centrifugation. The sorted sc-SWCNT inks have been directly used to fabricate thin film transistors (TFTs) by dip-coating, drop-casting and inkjet printing. TFTs with an effective mobility of ∼34 cm(2) V(-1) s(-1) and on-off ratios of ∼10(7) have been achieved by dip coating and drop casting the ink on SiO2/Si substrates with pre-patterned interdigitated gold electrode arrays. The printed devices also showed excellent electrical properties with a mobility of up to 6.6 cm(2) V(-1) s(-1) and on-off ratios of up to 10(5). Printed inverters based on the TFTs have been constructed on glass substrates, showing a maximum voltage gain of 112 at a V(dd) of -5 V. This work paves the way for making printable logic circuits for real applications.

  2. Quantum transport in carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Laird, Edward A.; Kuemmeth, Ferdinand; Steele, Gary A.; Grove-Rasmussen, Kasper; Nygârd, Jesper; Flensberg, Karsten; Kouwenhoven, Leo P.

    2015-07-01

    Carbon nanotubes are a versatile material in which many aspects of condensed matter physics come together. Recent discoveries have uncovered new phenomena that completely change our understanding of transport in these devices, especially the role of the spin and valley degrees of freedom. This review describes the modern understanding of transport through nanotube devices. Unlike in conventional semiconductors, electrons in nanotubes have two angular momentum quantum numbers, arising from spin and valley freedom. The interplay between the two is the focus of this review. The energy levels associated with each degree of freedom, and the spin-orbit coupling between them, are explained, together with their consequences for transport measurements through nanotube quantum dots. In double quantum dots, the combination of quantum numbers modifies the selection rules of Pauli blockade. This can be exploited to read out spin and valley qubits and to measure the decay of these states through coupling to nuclear spins and phonons. A second unique property of carbon nanotubes is that the combination of valley freedom and electron-electron interactions in one dimension strongly modifies their transport behavior. Interaction between electrons inside and outside a quantum dot is manifested in SU(4) Kondo behavior and level renormalization. Interaction within a dot leads to Wigner molecules and more complex correlated states. This review takes an experimental perspective informed by recent advances in theory. As well as the well-understood overall picture, open questions for the field are also clearly stated. These advances position nanotubes as a leading system for the study of spin and valley physics in one dimension where electronic disorder and hyperfine interaction can both be reduced to a low level.

  3. Carbon nanotube coatings as chemical absorbers

    DOEpatents

    Tillotson, Thomas M.; Andresen, Brian D.; Alcaraz, Armando

    2004-06-15

    Airborne or aqueous organic compound collection using carbon nanotubes. Exposure of carbon nanotube-coated disks to controlled atmospheres of chemical warefare (CW)-related compounds provide superior extraction and retention efficiencies compared to commercially available airborne organic compound collectors. For example, the carbon nanotube-coated collectors were four (4) times more efficient toward concentrating dimethylmethyl-phosphonate (DMMP), a CW surrogate, than Carboxen, the optimized carbonized polymer for CW-related vapor collections. In addition to DMMP, the carbon nanotube-coated material possesses high collection efficiencies for the CW-related compounds diisopropylaminoethanol (DIEA), and diisopropylmethylphosphonate (DIMP).

  4. Submicrosecond-timescale readout of carbon nanotube mechanical motion

    NASA Astrophysics Data System (ADS)

    Meerwaldt, H. B.; Johnston, S. R.; van der Zant, H. S. J.; Steele, G. A.

    2013-07-01

    We report fast readout of the motion of a carbon nanotube mechanical resonator. A close-proximity high electron mobility transistor amplifier is used to increase the bandwidth of the measurement of nanotube displacements from the kHz to the MHz regime. Using an electrical detection scheme with the nanotube acting as a mixer, we detect the amplitude of its mechanical motion at room temperature with an intermediate frequency of 6 MHz and a timeconstant of 780 ns, both up to five orders of magnitude faster than achieved before. The transient response of the mechanical motion indicates a ring-down time faster than our enhanced time resolution, placing an upper bound on the contribution of energy relaxation processes to the room temperature mechanical quality factor.

  5. Analytical modeling of glucose biosensors based on carbon nanotubes

    PubMed Central

    2014-01-01

    In recent years, carbon nanotubes have received widespread attention as promising carbon-based nanoelectronic devices. Due to their exceptional physical, chemical, and electrical properties, namely a high surface-to-volume ratio, their enhanced electron transfer properties, and their high thermal conductivity, carbon nanotubes can be used effectively as electrochemical sensors. The integration of carbon nanotubes with a functional group provides a good and solid support for the immobilization of enzymes. The determination of glucose levels using biosensors, particularly in the medical diagnostics and food industries, is gaining mass appeal. Glucose biosensors detect the glucose molecule by catalyzing glucose to gluconic acid and hydrogen peroxide in the presence of oxygen. This action provides high accuracy and a quick detection rate. In this paper, a single-wall carbon nanotube field-effect transistor biosensor for glucose detection is analytically modeled. In the proposed model, the glucose concentration is presented as a function of gate voltage. Subsequently, the proposed model is compared with existing experimental data. A good consensus between the model and the experimental data is reported. The simulated data demonstrate that the analytical model can be employed with an electrochemical glucose sensor to predict the behavior of the sensing mechanism in biosensors. PMID:24428818

  6. Method of making carbon nanotube composite materials

    DOEpatents

    O'Bryan, Gregory; Skinner, Jack L; Vance, Andrew; Yang, Elaine Lai; Zifer, Thomas

    2014-05-20

    The present invention is a method of making a composite polymeric material by dissolving a vinyl thermoplastic polymer, un-functionalized carbon nanotubes and hydroxylated carbon nanotubes and optionally additives in a solvent to make a solution and removing at least a portion of the solvent after casting onto a substrate to make thin films. The material has enhanced conductivity properties due to the blending of the un-functionalized and hydroxylated carbon nanotubes.

  7. High Performance Multiwall Carbon Nanotube Bolometers

    DTIC Science & Technology

    2010-10-21

    REPORT High performance multiwall carbon nanotube bolometers 14. ABSTRACT 16. SECURITY CLASSIFICATION OF: High infrared bolometric photoresponse has...been observed in multiwall carbon nanotube MWCNT films at room temperature. The observed detectivity D in exceeding 3.3 106 cm Hz1/2 /W on MWCNT film...U.S. Army Research Office P.O. Box 12211 Research Triangle Park, NC 27709-2211 15. SUBJECT TERMS carbon nanotube, infrared detector, bolometer

  8. Carbon Nanotube Array for Infrared Detection

    DTIC Science & Technology

    2011-09-28

    REPORT Carbon Nanotube Array for Infrared Detection 14. ABSTRACT 16. SECURITY CLASSIFICATION OF: The core effort of this project has been the electrical...transport and infrared photoresponse properties of carbon nanotube (CNT) systems. 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13-06-2012 13...DATES COVERED (From - To) 1-Jul-2008 Standard Form 298 (Rev 8/98) Prescribed by ANSI Std. Z39.18 - 30-Jun-2011 Carbon Nanotube Array for Infrared

  9. High-throughput optical imaging and spectroscopy of individual carbon nanotubes in devices.

    PubMed

    Liu, Kaihui; Hong, Xiaoping; Zhou, Qin; Jin, Chenhao; Li, Jinghua; Zhou, Weiwei; Liu, Jie; Wang, Enge; Zettl, Alex; Wang, Feng

    2013-12-01

    Single-walled carbon nanotubes are uniquely identified by a pair of chirality indices (n,m), which dictate the physical structures and electronic properties of each species. Carbon nanotube research is currently facing two outstanding challenges: achieving chirality-controlled growth and understanding chirality-dependent device physics. Addressing these challenges requires, respectively, high-throughput determination of the nanotube chirality distribution on growth substrates and in situ characterization of the nanotube electronic structure in operating devices. Direct optical imaging and spectroscopy techniques are well suited for both goals, but their implementation at the single nanotube level has remained a challenge due to the small nanotube signal and unavoidable environment background. Here, we report high-throughput real-time optical imaging and broadband in situ spectroscopy of individual carbon nanotubes on various substrates and in field-effect transistor devices using polarization-based microscopy combined with supercontinuum laser illumination. Our technique enables the complete chirality profiling of hundreds of individual carbon nanotubes, both semiconducting and metallic, on a growth substrate. In devices, we observe that high-order nanotube optical resonances are dramatically broadened by electrostatic doping, an unexpected behaviour that points to strong interband electron-electron scattering processes that could dominate ultrafast dynamics of excited states in carbon nanotubes.

  10. Carbon Nanotube Thermoelectric Coolers

    DTIC Science & Technology

    2015-02-06

    The cooling cycle : The electric current pulls out the electron and hole excitations from the central region of the nanotube. (c) The heating cycle ...thermoelectric heating and cooling cycles . The sharp features in the  eG V curve corresponding to energy levels EC localized in the active region...liquid nitrogen temperature 77T  K up to hot 134 8T  K, or decreases from 77T  K down to about cold 20 6T  K, thus evidencing a strong

  11. Torsional carbon nanotube artificial muscles.

    PubMed

    Foroughi, Javad; Spinks, Geoffrey M; Wallace, Gordon G; Oh, Jiyoung; Kozlov, Mikhail E; Fang, Shaoli; Mirfakhrai, Tissaphern; Madden, John D W; Shin, Min Kyoon; Kim, Seon Jeong; Baughman, Ray H

    2011-10-28

    Rotary motors of conventional design can be rather complex and are therefore difficult to miniaturize; previous carbon nanotube artificial muscles provide contraction and bending, but not rotation. We show that an electrolyte-filled twist-spun carbon nanotube yarn, much thinner than a human hair, functions as a torsional artificial muscle in a simple three-electrode electrochemical system, providing a reversible 15,000° rotation and 590 revolutions per minute. A hydrostatic actuation mechanism, as seen in muscular hydrostats in nature, explains the simultaneous occurrence of lengthwise contraction and torsional rotation during the yarn volume increase caused by electrochemical double-layer charge injection. The use of a torsional yarn muscle as a mixer for a fluidic chip is demonstrated.

  12. Ballistic Fracturing of Carbon Nanotubes.

    PubMed

    Ozden, Sehmus; Machado, Leonardo D; Tiwary, ChandraSekhar; Autreto, Pedro A S; Vajtai, Robert; Barrera, Enrique V; Galvao, Douglas S; Ajayan, Pulickel M

    2016-09-21

    Advanced materials with multifunctional capabilities and high resistance to hypervelocity impact are of great interest to the designers of aerospace structures. Carbon nanotubes (CNTs) with their lightweight and high strength properties are alternative to metals and/or metallic alloys conventionally used in aerospace applications. Here we report a detailed study on the ballistic fracturing of CNTs for different velocity ranges. Our results show that the highly energetic impacts cause bond breakage and carbon atom rehybridizations, and sometimes extensive structural reconstructions were also observed. Experimental observations show the formation of nanoribbons, nanodiamonds, and covalently interconnected nanostructures, depending on impact conditions. Fully atomistic reactive molecular dynamics simulations were also carried out in order to gain further insights into the mechanism behind the transformation of CNTs. The simulations show that the velocity and relative orientation of the multiple colliding nanotubes are critical to determine the impact outcome.

  13. Carbon Nanotubes: Molecular Electronic Components

    NASA Technical Reports Server (NTRS)

    Srivastava, Deepak; Saini, Subhash; Menon, Madhu

    1997-01-01

    The carbon Nanotube junctions have recently emerged as excellent candidates for use as the building blocks in the formation of nanoscale molecular electronic networks. While the simple joint of two dissimilar tubes can be generated by the introduction of a pair of heptagon-pentagon defects in an otherwise perfect hexagonal graphene sheet, more complex joints require other mechanisms. In this work we explore structural characteristics of complex 3-point junctions of carbon nanotubes using a generalized tight-binding molecular-dynamics scheme. The study of pi-electron local densities of states (LDOS) of these junctions reveal many interesting features, most prominent among them being the defect-induced states in the gap.

  14. Torsional Carbon Nanotube Artificial Muscles

    NASA Astrophysics Data System (ADS)

    Foroughi, Javad; Spinks, Geoffrey M.; Wallace, Gordon G.; Oh, Jiyoung; Kozlov, Mikhail E.; Fang, Shaoli; Mirfakhrai, Tissaphern; Madden, John D. W.; Shin, Min Kyoon; Kim, Seon Jeong; Baughman, Ray H.

    2011-10-01

    Rotary motors of conventional design can be rather complex and are therefore difficult to miniaturize; previous carbon nanotube artificial muscles provide contraction and bending, but not rotation. We show that an electrolyte-filled twist-spun carbon nanotube yarn, much thinner than a human hair, functions as a torsional artificial muscle in a simple three-electrode electrochemical system, providing a reversible 15,000° rotation and 590 revolutions per minute. A hydrostatic actuation mechanism, as seen in muscular hydrostats in nature, explains the simultaneous occurrence of lengthwise contraction and torsional rotation during the yarn volume increase caused by electrochemical double-layer charge injection. The use of a torsional yarn muscle as a mixer for a fluidic chip is demonstrated.

  15. Multilayer Film Assembly of Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Cassell, Alan M.; Meyyappan, M.; Han, Jie; Arnold, J. (Technical Monitor)

    2000-01-01

    An approach to assemble multilayers of carbon nanotubes on a substrate is presented. Chemical vapor deposition using a transition metal catalyst formulation is used to grow the nanotubes. Results show a bilayer assembly of nanotubes each with a different density of tubes.

  16. Carbon Nanotube Field Emission Arrays

    DTIC Science & Technology

    2011-06-01

    deposition (PE-CVD), which is a hybrid of plasma based and thermal based synthesis, and silicon carbide ( SiC ) surface decomposition which, though a true...fabrication method. 2.4.3.2. Surface Decomposition The fabrication of carbon nanotubes by surface decomposition of silicon carbide offers some unique...CNTs are vertically aligned and attached to the remaining silicon carbide substrate. Surface decomposition is achieved through high temperatures in a

  17. Nanospot welding of carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Hirayama, H.; Kawamoto, Y.; Ohshima, Y.; Takayanagi, K.

    2001-08-01

    Single wall carbon nanotube (SWNT) bundles protruding from the SWNT layers on self-aligned Sn apexes were brought to a distance of 30 nm by a scanning tunneling microscope inside a transmission electron microscope. A straight bundle on the tip could be observed in situ in contact electrostatically with a looped bundle on the sample by applying tip bias voltages above 2.0 V. The bundles were welded at the nanometer size contact area by local Joule heating.

  18. From carbon nanobells to nickel nanotubes

    NASA Astrophysics Data System (ADS)

    Ma, S.; Srikanth, V. V. S. S.; Maik, D.; Zhang, G. Y.; Staedler, T.; Jiang, X.

    2009-01-01

    A generic strategy is proposed to prepare one dimensional (1D) metallic nanotubes by using 1D carbon nanostructures as the initial templates. Following the strategy, nickel (Ni) nanotubes are prepared by using carbon nanobells (CNBs) as the initial templates. CNBs are first prepared by microwave plasma enhanced chemical vapor deposition technique. Carbon/nickel core/shell structures are then prepared by electroplating the CNBs in a nickel-Watts electrolytic cell. In the final step, the carbon core is selectively removed by employing hydrogen plasma etching to obtain Ni nanotubes. The mechanism leading to Ni nanotubes is briefly discussed.

  19. Thermal conductivity of deformed carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Zhong, Wei-Rong; Zhang, Mao-Ping; Zheng, Dong-Qin; Ai, Bao-Quan

    2011-04-01

    We investigate the thermal conductivity of four types of deformed carbon nanotubes by using the nonequilibrium molecular dynamics method. It is reported that various deformations have different influences on the thermal properties of carbon nanotubes. For bending carbon nanotubes, the thermal conductivity is independent of the bending angle. However, the thermal conductivity increases lightly with xy-distortion and decreases rapidly with z-distortion. The thermal conductivity does not change with the screw ratio before the breaking of carbon nanotubes, but it decreases sharply after the critical screw ratio.

  20. A Thermal Model for Carbon Nanotube Interconnects

    PubMed Central

    Mohsin, Kaji Muhammad; Srivastava, Ashok; Sharma, Ashwani K.; Mayberry, Clay

    2013-01-01

    In this work, we have studied Joule heating in carbon nanotube based very large scale integration (VLSI) interconnects and incorporated Joule heating influenced scattering in our previously developed current transport model. The theoretical model explains breakdown in carbon nanotube resistance which limits the current density. We have also studied scattering parameters of carbon nanotube (CNT) interconnects and compared with the earlier work. For 1 µm length single-wall carbon nanotube, 3 dB frequency in S12 parameter reduces to ~120 GHz from 1 THz considering Joule heating. It has been found that bias voltage has little effect on scattering parameters, while length has very strong effect on scattering parameters.

  1. Carbon nanotubes - curse or blessing.

    PubMed

    Kaiser, J-P; Roesslein, M; Buerki-Thurnherr, T; Wick, P

    2011-01-01

    Although nanotechnology is a relatively new scientific field, quite many different products are already introduced in the market containing nanosized particles. A special class of nanosized materials namely the carbon nanotubes (CNT) possesses outstanding new properties and extraordinary potential for creating new products. Carbon nanotubes are already used in various consumer products, industrial applications and science. It is not as this time clear how CNT are able to affect human health since most types of CNTs differ significantly in terms of structural characteristics (morphology, size, shape and length), surface properties (surface chemistry and surface charge) and chemical composition. This review provides an overview about contradicting reports that are found in the literature. We summarize the studies that report about nontoxic as well as toxic effects of CNT in-vitro and in-vivo. We describe how carbon nanotubes can readily be degraded under certain conditions. Another phenomenon is that despite the observed toxic effects which may occur to cells, organs and animals after uptake of CNT, intensive research investigations were undertaken in order to use these outstanding materials in medical applications. The second part of this review starts with a short description of the main principles in metrology. Observed conflicts were discussed in CNT toxicity assays into terms of measurement science or metrology issues. It was demonstrated that any specification of a measurand is only valid within the given framework. This means that many of the published results are within their measurement framework correct, but there are no means to compare them outside this framework.

  2. Torsional electromechanical quantum oscillations in carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Cohen-Karni, Tzahi; Segev, Lior; Srur-Lavi, Onit; Cohen, Sidney R.; Joselevich, Ernesto

    2006-10-01

    Carbon nanotubes can be distinctly metallic or semiconducting depending on their diameter and chirality. Here we show that continuously varying the chirality by mechanical torsion can induce conductance oscillations, which can be attributed to metal-semiconductor periodic transitions. The phenomenon is observed in multiwalled carbon nanotubes, where both the torque and the current are shown to be carried predominantly by the outermost wall. The oscillation period with torsion is consistent with the theoretical shifting of the corners of the first Brillouin zone of graphene across different sub-bands allowed in the nanotube. Beyond a critical torsion, the conductance irreversibly drops due to torsional failure, allowing us to determine the torsional strength of carbon nanotubes. Carbon nanotubes could be ideal torsional springs for nanoscopic pendulums, because electromechanical detection of motion could replace the microscopic detection techniques used at present. Our experiments indicate that carbon nanotubes could be used as electronic sensors of torsional motion in nanoelectromechanical systems.

  3. Understanding Charge Transport in Mixed Networks of Semiconducting Carbon Nanotubes

    PubMed Central

    2016-01-01

    The ability to select and enrich semiconducting single-walled carbon nanotubes (SWNT) with high purity has led to a fast rise of solution-processed nanotube network field-effect transistors (FETs) with high carrier mobilities and on/off current ratios. However, it remains an open question whether it is best to use a network of only one nanotube species (monochiral) or whether a mix of purely semiconducting nanotubes but with different bandgaps is sufficient for high performance FETs. For a range of different polymer-sorted semiconducting SWNT networks, we demonstrate that a very small amount of narrow bandgap nanotubes within a dense network of large bandgap nanotubes can dominate the transport and thus severely limit on-currents and effective carrier mobility. Using gate-voltage-dependent electroluminescence, we spatially and spectrally reveal preferential charge transport that does not depend on nominal network density but on the energy level distribution within the network and carrier density. On the basis of these results, we outline rational guidelines for the use of mixed SWNT networks to obtain high performance FETs while reducing the cost for purification. PMID:26867006

  4. Physically unclonable cryptographic primitives using self-assembled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Hu, Zhaoying; Comeras, Jose Miguel M. Lobez; Park, Hongsik; Tang, Jianshi; Afzali, Ali; Tulevski, George S.; Hannon, James B.; Liehr, Michael; Han, Shu-Jen

    2016-06-01

    Information security underpins many aspects of modern society. However, silicon chips are vulnerable to hazards such as counterfeiting, tampering and information leakage through side-channel attacks (for example, by measuring power consumption, timing or electromagnetic radiation). Single-walled carbon nanotubes are a potential replacement for silicon as the channel material of transistors due to their superb electrical properties and intrinsic ultrathin body, but problems such as limited semiconducting purity and non-ideal assembly still need to be addressed before they can deliver high-performance electronics. Here, we show that by using these inherent imperfections, an unclonable electronic random structure can be constructed at low cost from carbon nanotubes. The nanotubes are self-assembled into patterned HfO2 trenches using ion-exchange chemistry, and the width of the trench is optimized to maximize the randomness of the nanotube placement. With this approach, two-dimensional (2D) random bit arrays are created that can offer ternary-bit architecture by determining the connection yield and switching type of the nanotube devices. As a result, our cryptographic keys provide a significantly higher level of security than conventional binary-bit architecture with the same key size.

  5. Physically unclonable cryptographic primitives using self-assembled carbon nanotubes.

    PubMed

    Hu, Zhaoying; Comeras, Jose Miguel M Lobez; Park, Hongsik; Tang, Jianshi; Afzali, Ali; Tulevski, George S; Hannon, James B; Liehr, Michael; Han, Shu-Jen

    2016-06-01

    Information security underpins many aspects of modern society. However, silicon chips are vulnerable to hazards such as counterfeiting, tampering and information leakage through side-channel attacks (for example, by measuring power consumption, timing or electromagnetic radiation). Single-walled carbon nanotubes are a potential replacement for silicon as the channel material of transistors due to their superb electrical properties and intrinsic ultrathin body, but problems such as limited semiconducting purity and non-ideal assembly still need to be addressed before they can deliver high-performance electronics. Here, we show that by using these inherent imperfections, an unclonable electronic random structure can be constructed at low cost from carbon nanotubes. The nanotubes are self-assembled into patterned HfO2 trenches using ion-exchange chemistry, and the width of the trench is optimized to maximize the randomness of the nanotube placement. With this approach, two-dimensional (2D) random bit arrays are created that can offer ternary-bit architecture by determining the connection yield and switching type of the nanotube devices. As a result, our cryptographic keys provide a significantly higher level of security than conventional binary-bit architecture with the same key size.

  6. Simulation of carbon nanotube welding through Ar bombardment.

    PubMed

    Kucukkal, Mustafa U; Stuart, Steven J

    2017-04-01

    Single-walled carbon nanotubes show promise as nanoscale transistors for nanocomputing applications. This use will require appropriate methods for creating electrical connections between distinct nanotubes, analogous to welding of metallic wires at larger length scales, but methods for performing nanoscale chemical welding are not yet sufficiently understood. This study examines the effect of Ar bombardment on the junction of two crossed single-walled carbon nanotubes, to understand the value and limitations of this method for generating connections between nanotubes. A geometric criterion was used to assess the quality of the junctions formed, with the goal of identifying the most productive conditions for experimental ion bombardment. In particular, the effects of nanotube chirality, Ar impact kinetic energy, impact particle flux and fluence, and annealing temperature were considered. The most productive bombardment conditions, leading to the most crosslinking of the tubes with the smallest loss of graphitic (i.e., conductive) character, were found to be at relatively mild impact energies (100 eV), with low flux and high-temperature (3000 K) annealing. Particularly noteworthy for experimental application, a high junction quality is maintained for a relatively broad range of fluences, from 3 × 10(19) m(-2) to at least 1 × 10(20) m(-2).

  7. Improved Process for Fabricating Carbon Nanotube Probes

    NASA Technical Reports Server (NTRS)

    Stevens, R.; Nguyen, C.; Cassell, A.; Delzeit, L.; Meyyappan, M.; Han, Jie

    2003-01-01

    An improved process has been developed for the efficient fabrication of carbon nanotube probes for use in atomic-force microscopes (AFMs) and nanomanipulators. Relative to prior nanotube tip production processes, this process offers advantages in alignment of the nanotube on the cantilever and stability of the nanotube's attachment. A procedure has also been developed at Ames that effectively sharpens the multiwalled nanotube, which improves the resolution of the multiwalled nanotube probes and, combined with the greater stability of multiwalled nanotube probes, increases the effective resolution of these probes, making them comparable in resolution to single-walled carbon nanotube probes. The robust attachment derived from this improved fabrication method and the natural strength and resiliency of the nanotube itself produces an AFM probe with an extremely long imaging lifetime. In a longevity test, a nanotube tip imaged a silicon nitride surface for 15 hours without measurable loss of resolution. In contrast, the resolution of conventional silicon probes noticeably begins to degrade within minutes. These carbon nanotube probes have many possible applications in the semiconductor industry, particularly as devices are approaching the nanometer scale and new atomic layer deposition techniques necessitate a higher resolution characterization technique. Previously at Ames, the use of nanotube probes has been demonstrated for imaging photoresist patterns with high aspect ratio. In addition, these tips have been used to analyze Mars simulant dust grains, extremophile protein crystals, and DNA structure.

  8. Detecting Lyme disease using antibody-functionalized carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Dailey, Jennifer; Lerner, Mitchell; Goldsmith, Brett; Brisson, Dustin; Johnson, A. T. Charlie

    2011-03-01

    We combine antibodies for Lyme flagellar protein with carbon nanotube transistors to create an electronic sensor capable of definitive detection of Lyme disease. Over 35,000 cases of Lyme disease are reported in the United States each year, of which more than 23 percent are originally misdiagnosed. Rational design of the coupling of the biological system to the electronic system gives us a flexible sensor platform which we can apply to several biological systems. By coupling these antibodies to carbon nanotubes in particular, we allow for fast, sensitive, highly selective, electronic detection. Unlike antibody or biomarker detection, bacterial protein detection leads to positive identification of both early and late stage bacterial infections, and is easily expandable to environmental monitoring.

  9. Applications of carbon nanotubes on integrated circuits

    NASA Astrophysics Data System (ADS)

    Zhang, Min

    The microelectronics technology falls within the boundaries of that definition. Carbon nanotube (CNT) is a promising alternative material for the future nanoelectronics. Owing to the unique properties of CNTs and the maturity of CMOS IC technology, the integration of the two technologies will take advantages of both. In this work, we demonstrate a new local silicon-gate carbon nanotube field-effect transistor (CNFET) by combining the in situ CNT growth technology and the SOI technology. The proposed CNFET structure has realized individual device operation, batch fabrication, low parasitics and better compatibility to the CMOS process at the same time. The configuration proposes a feasible approach to integrate the CNTs to CMOS platform for the first time, which makes CNT a step closer to application. The CNFETs show advanced DC characteristics. The ambipolar conductance and the scaling effect of the CNFETs have been analyzed based on the SB modulated conductance mechanism. Investigation of radio-frequency (RF) characteristics of CNTs is essential for their application. RF transmission characteristics of the semiconducting and metallic CNTs are investigated to the frequency of 12 GHz using the full two-port S-parameter methodology for the first time. Without the effect of the parasitics, the signal transmission capability of the CNTs maintains at a constant level and shows no degeneration even at a high frequency of 12 GHz. An empirical RLC element model has been proposed to fit the RF response of the CNT array. Capacitive contact is reported between the CNTs and the metal electrodes. We also explore the high-frequency properties of the local silicon-gate CNFET as an active device by measuring its S parameters using a common-source configuration. In addition, we demonstrate the application of CNT as via/contact filler to solve the problems of copper vias used in ICs nowadays. We have optimized the fabrication process for the CNT via integration. The CNT vias with

  10. Lipid bilayers covalently anchored to carbon nanotubes.

    PubMed

    Dayani, Yasaman; Malmstadt, Noah

    2012-05-29

    The unique physical and electrical properties of carbon nanotubes make them an exciting material for applications in various fields such as bioelectronics and biosensing. Due to the poor water solubility of carbon nanotubes, functionalization for such applications has been a challenge. Of particular need are functionalization methods for integrating carbon nanotubes with biomolecules and constructing novel hybrid nanostructures for bionanoelectronic applications. We present a novel method for the fabrication of dispersible, biocompatible carbon nanotube-based materials. Multiwalled carbon nanotubes (MWCNTs) are covalently modified with primary amine-bearing phospholipids in a carbodiimide-activated reaction. These modified carbon nanotubes have good dispersibility in nonpolar solvents. Fourier transform infrared (FTIR) spectroscopy shows peaks attributable to the formation of amide bonds between lipids and the nanotube surface. Simple sonication of lipid-modified nanotubes with other lipid molecules leads to the formation of a uniform lipid bilayer coating the nanotubes. These bilayer-coated nanotubes are highly dispersible and stable in aqueous solution. Confocal fluorescence microscopy shows labeled lipids on the surface of bilayer-modified nanotubes. Transmission electron microscopy (TEM) shows the morphology of dispersed bilayer-coated MWCNTs. Fluorescence quenching of lipid-coated MWCNTs confirms the bilayer configuration of the lipids on the nanotube surface, and fluorescence anisotropy measurements show that the bilayer is fluid above the gel-to-liquid transition temperature. The membrane protein α-hemolysin spontaneously inserts into the MWCNT-supported bilayer, confirming the biomimetic membrane structure. These biomimetic nanostructures are a promising platform for the integration of carbon nanotube-based materials with biomolecules.

  11. Plasticity and Kinky Chemistry of Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Srivastava, Deepak; Dzegilenko, Fedor

    2000-01-01

    Since their discovery in 1991, carbon nanotubes have been the subject of intense research interest based on early predictions of their unique mechanical, electronic, and chemical properties. Materials with the predicted unique properties of carbon nanotubes are of great interest for use in future generations of aerospace vehicles. For their structural properties, carbon nanotubes could be used as reinforcing fibers in ultralight multifunctional composites. For their electronic properties, carbon nanotubes offer the potential of very high-speed, low-power computing elements, high-density data storage, and unique sensors. In a continuing effort to model and predict the properties of carbon nanotubes, Ames accomplished three significant results during FY99. First, accurate values of the nanomechanics and plasticity of carbon nanotubes based on quantum molecular dynamics simulations were computed. Second, the concept of mechanical deformation catalyzed-kinky-chemistry as a means to control local chemistry of nanotubes was discovered. Third, the ease of nano-indentation of silicon surfaces with carbon nanotubes was established. The elastic response and plastic failure mechanisms of single-wall nanotubes were investigated by means of quantum molecular dynamics simulations.

  12. Electrostatic gating in carbon nanotube aptasensors

    NASA Astrophysics Data System (ADS)

    Zheng, Han Yue; Alsager, Omar A.; Zhu, Bicheng; Travas-Sejdic, Jadranka; Hodgkiss, Justin M.; Plank, Natalie O. V.

    2016-07-01

    Synthetic DNA aptamer receptors could boost the prospects of carbon nanotube (CNT)-based electronic biosensors if signal transduction can be understood and engineered. Here, we report CNT aptasensors for potassium ions that clearly demonstrate aptamer-induced electrostatic gating of electronic conduction. The CNT network devices were fabricated on flexible substrates via a facile solution processing route and non-covalently functionalised with potassium binding aptamers. Monotonic increases in CNT conduction were observed in response to increasing potassium ion concentration, with a level of detection as low as 10 picomolar. The signal was shown to arise from a specific aptamer-target interaction that stabilises a G-quadruplex structure, bringing high negative charge density near the CNT channel. Electrostatic gating is established via the specificity and the sign of the current response, and by observing its suppression when higher ionic strength decreases the Debye length at the CNT-water interface. Sensitivity towards potassium and selectivity against other ions is demonstrated in both resistive mode and real time transistor mode measurements. The effective device architecture presented, along with the identification of clear response signatures, should inform the development of new electronic biosensors using the growing library of aptamer receptors.Synthetic DNA aptamer receptors could boost the prospects of carbon nanotube (CNT)-based electronic biosensors if signal transduction can be understood and engineered. Here, we report CNT aptasensors for potassium ions that clearly demonstrate aptamer-induced electrostatic gating of electronic conduction. The CNT network devices were fabricated on flexible substrates via a facile solution processing route and non-covalently functionalised with potassium binding aptamers. Monotonic increases in CNT conduction were observed in response to increasing potassium ion concentration, with a level of detection as low as 10

  13. CARBON NANOTUBES: PROPERTIES AND APPLICATIONS

    SciTech Connect

    Fischer, John, E.

    2009-07-24

    Carbon nanotubes were discovered in 1991 as a minority byproduct of fullerene synthesis. Remarkable progress has been made in the ensuing years, including the discovery of two basic types of nanotubes (single-wall and multi-wall), great strides in synthesis and purification, elucidation of many fundamental physical properties, and important steps towards practical applications. Both the underlying science and technological potential of SWNT can profitably be studied at the scale of individual tubes and on macroscopic assemblies such as fibers. Experiments on single tubes directly reveal many of the predicted quantum confinement and mechanical properties. Semiconductor nanowires have many features in common with nanotubes, and many of the same fundamental and practical issues are in play – quantum confinement and its effect on properties; possible device structures and circuit architectures; thermal management; optimal synthesis, defect morphology and control, etc. In 2000 we began a small effort in this direction, conducted entirely by undergraduates with minimal consumables support from this grant. With DOE-BES approval, this grew into a project in parallel with the carbon nanotube work, in which we studied of inorganic semiconductor nanowire growth, characterization and novel strategies for electronic and electromechanical device fabrication. From the beginnings of research on carbon nanotubes, one of the major applications envisioned was hydrogen storage for fuel-cell powered cars and trucks. Subsequent theoretical models gave mixed results, the most pessimistic indicating that the fundamental H2-SWNT interaction was similar to flat graphite (physisorption) with only modest binding energies implying cryogenic operation at best. New material families with encouraging measured properties have emerged, and materials modeling has gained enormously in predictive power, sophistication, and the ability to treat a realistically representative number of atoms. One of

  14. Covalent Sidewall Functionalization of Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Chiang, I.W.; Saini, R. K.; Mickelson, E. T.; Billups, W. E.; Hauge, R. H.; Margrave, J. L.

    2001-01-01

    Progress of fluorination of single-wall carbon nanotubes is being reported. Covalent attachment of alkyl groups including methyl, n-butyl and n-hexyl groups to the sidewalls of single wall carbon nanotubes (SWNTs) has been achieved. Quantitative measurement of the alkylation was done by thermal gravimetric analysis. FTIR, Raman and UV-Vis-NIR were used to characterize these alkylated SWNTs. Application of these nanotubes are being investigated-fibers, composites, batteries, lubricants, etc.

  15. Amorphous Carbon-Boron Nitride Nanotube Hybrids

    NASA Technical Reports Server (NTRS)

    Kim, Jae Woo (Inventor); Siochi, Emilie J. (Inventor); Wise, Kristopher E. (Inventor); Lin, Yi (Inventor); Connell, John (Inventor)

    2016-01-01

    A method for joining or repairing boron nitride nanotubes (BNNTs). In joining BNNTs, the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures. In repairing BNNTs, the damaged site of the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures at the damage site.

  16. Hydrogen Storage in Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Gilbert, Joseph; Gilbert, Matthew; Naab, Fabian; Savage, Lauren; Holland, Wayne; Duggan, Jerome; McDaniel, Floyd

    2004-10-01

    Hydrogen as a fuel source is an attractive, relatively clean alternative to fossil fuels. However, a major limitation in its use for the application of automobiles has been the requirement for an efficient hydrogen storage medium. Current hydrogen storage systems are: physical storage in high pressure tanks, metal hydride, and gas-on-solid absorption. However, these methods do not fulfill the Department of Energy's targeted requirements for a usable hydrogen storage capacity of 6.5 wt.%, operation near ambient temperature and pressure, quick extraction and refueling, reliability and reusability.Reports showing high capacity hydrogen storage in single-walled carbon nanotubes originally prompted great excitement in the field, but further research has shown conflicting results. Results for carbon nanostructures have ranged from less than 1 wt.% to 70 wt.%. The wide range of adsorption found in previous experiments results from the difficulty in measuring hydrogen in objects just nanometers in size. Most previous experiments relied on weight analysis and residual gas analysis to determine the amount of hydrogen being adsorbed by the CNTs. These differing results encouraged us to perform our own analysis on single-walled (SWNTs), double-walled (DWNTs), and multi-walled carbon nanotubes (MWNTs), as well as carbon fiber. We chose to utilize direct measurement of hydrogen in the materials using elastic recoil detection analysis (ERDA). This work was supported by the National Science Foundation's Research Experience for Undergraduates and the University of North Texas.

  17. Multiscale Simulations of Carbon Nanotubes and Liquids

    NASA Astrophysics Data System (ADS)

    Koumoutsakos, Petros

    2005-11-01

    We present molecular dynamics and hybrid continuum/atomistic simulations of carbon nanotubes in liquid environments with an emphasis on aqueous solutions. We emphasize computational issues such as interaction potentials and coupling techniques and their influence on the simulated physics. We present results from simulations of water flows inside and outside doped and pure carbon nanotubes and discuss their implications for experimental studies.

  18. Ophthalmologial Applications of Carbon Nanotube Nanotechology

    NASA Technical Reports Server (NTRS)

    Loftus, David; Girten, Beverly (Technical Monitor)

    2002-01-01

    The development of an implantable device consisting of an array of carbon nanotubes on a silicon chip for restoration of vision in patients with macular degeneration and other retinal disorders is presented. The use of carbon nanotube bucky paper for retinal cell transplantation is proposed. This paper is in viewgraph form.

  19. Nanocapillarity and chemistry in carbon nanotubes

    SciTech Connect

    Ugarte, D.; Chatelain, A.; Heer, W.A. de

    1996-12-13

    Open carbon nanotubes were filled with molten silver nitrate by capillary forces. Only those tubes with inner diameters of 4 nanometers or more were filled, suggesting a capillarity size dependence as a result of the lowering of the nanotube-salt interface energy with increasing curvature of the nanotube walls. Nanotube cavities should also be less chemically reactive than graphite and may serve as nanosize test tubes. This property has been illustrated by monitoring the decomposition of silver nitrate within nanotubes in situ in an electron microscope, which produced chains of silver nanobeads separated by high-pressure gas pockets. 32 refs., 3 figs.

  20. Epitaxial Approaches to Carbon Nanotube Organization

    NASA Astrophysics Data System (ADS)

    Ismach, Ariel

    Carbon nanotubes have unique electronic, mechanical, optical and thermal properties, which make them ideal candidates as building blocks in nano-electronic and electromechanical systems. However, their organization into well-defined geometries and arrays on surfaces remains a critical challenge for their integration into functional nanosystems. In my PhD, we developed a new approach for the organization of carbon nanotubes directed by crystal surfaces. The principle relies on the guided growth of single-wall carbon nanotubes (SWNTs) by atomic features presented on anisotropic substrates. We identified three different modes of surface-directed growth (or 'nanotube epitaxy'), in which the growth of carbon nanotubes is directed by crystal substrates: We first observed the nanotube unidirectional growth along atomic steps ('ledge-directed epitaxy') and nanofacets ('graphoepitaxy') on the surface of miscut C-plane sapphire and quartz. The orientation along crystallographic directions ('lattice-directed epitaxy') was subsequently observed by other groups on different crystals. We have proposed a "wake growth" mechanism for the nanotube alignment along atomic steps and nanofacets. In this mechanism, the catalyst nanoparticle slides along the step or facet, leaving the nanotube behind as a wake. In addition, we showed that the combination of surface-directed growth with external forces, such as electric-field and gas flow, can lead to the simultaneous formation of complex nanotube structures, such as grids and serpentines. The "wake growth" model, which explained the growth of aligned nanotubes, could not explain the formation of nanotube serpentines. For the latter, we proposed a "falling spaghetti" mechanism, in which the nanotube first grows by a free-standing process, aligned in the direction of the gas flow, then followed by absorption on the stepped surface in an oscillatory manner, due to the competition between the drag force caused by the gas flow on the suspended

  1. A carbon nanotube based x-ray detector

    NASA Astrophysics Data System (ADS)

    Boucher, Richard A.; Bauch, Jürgen; Wünsche, Dietmar; Lackner, Gerhard; Majumder, Anindya

    2016-11-01

    X-ray detectors based on metal-oxide semiconductor field effect transistors couple instantaneous measurement with high accuracy. However, they only have a limited measurement lifetime because they undergo permanent degradation due to x-ray beam exposure. A field effect transistor based on carbon nanotubes (CNTs), however, overcomes this drawback of permanent degradation, because it can be reset into its starting state after being exposed to the x-ray beam. In this work the CNTs were deposited using a dielectrophoresis method on SiO2 coated p-type (boron-doped) Si substrates. For the prepared devices a best gate voltage shift of 244 V Gy-1 and a source-drain current sensitivity of 382 nA Gy-1 were achieved. These values are larger than those reached by the currently used MOSFET based devices.

  2. A modified structure for MOSFET-like carbon nanotube FET

    NASA Astrophysics Data System (ADS)

    Zeydi, Maryam Mirasanloo; Yousefi, Reza

    2016-04-01

    In this paper, non-equilibrium Green's function method is used to investigate the characteristics of carbon nanotube field-effect transistors (CNTFETs). Leakage current resulted from band-to-band tunneling, and ambipolarity behaviors are among the known effects for CNTFET devices. To minimize these phenomena, a modified structure is presented in which density of source and drain in the transistor is reduced in steps while going toward the intrinsic channel. The proposed structure shows a better ambipolar property and less power-delay product at a given I ON/ I OFF ratio, and also less delay time at a given I ON compared with the available structure. Also, its other ON- and OFF-state characteristics are almost intact. Afterward, the effect of different factors on the behavior of the device and their optimal values such as channel length changes, chirality, dielectric constant, and gate length changes are investigated.

  3. Spray-gun deposition of catalyst for large area and versatile synthesis of carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Gohier, A.; Kim, K.-H.; Norman, E. D.; Gorintin, L.; Bondavalli, P.; Cojocaru, C. S.

    2012-06-01

    Spray gun deposition technique was investigated for large area deposition of nano-catalysts. In particular, we studied iron chloride salts solutions as catalyst precursor for the synthesis of carbon nanotubes (CNTs). Iron chloride salts are shown to decompose upon thermal annealing into Fe(III) oxide based species that make it suitable for further growth of various carbon nanotube structures. Depending on the spraying process, versatile synthesis of 2-D single-walled carbon nanotube network as well as vertically aligned carbon nanotubes arrays on functional substrates can be achieved. Such simple process for the preparation of CNT-based architecture opens new perspectives in the field of thin-film transistor and nanostructured electrodes.

  4. Selective breakdown of metallic pathways in double-walled carbon nanotube networks.

    PubMed

    Ng, Allen L; Sun, Yong; Powell, Lyndsey; Sun, Chuan-Fu; Chen, Chien-Fu; Lee, Cheng S; Wang, YuHuang

    2015-01-07

    Covalently functionalized, semiconducting double-walled carbon nanotubes exhibit remarkable properties and can outperform their single-walled carbon nanotube counterparts. In order to harness their potential for electronic applications, metallic double-walled carbon nanotubes must be separated from the semiconductors. However, the inner wall is inaccessible to current separation techniques which rely on the surface properties. Here, the first approach to address this challenge through electrical breakdown of metallic double-walled carbon nanotubes, both inner and outer walls, within networks of mixed electronic types is described. The intact semiconductors demonstrate a ∼62% retention of the ON-state conductance in thin film transistors in response to covalent functionalization. The selective elimination of the metallic pathways improves the ON/OFF ratio, by more than 360 times, to as high as 40 700, while simultaneously retaining high ON-state conductance.

  5. Coated carbon nanotube array electrodes

    DOEpatents

    Ren, Zhifeng; Wen, Jian; Chen, Jinghua; Huang, Zhongping; Wang, Dezhi

    2008-10-28

    The present invention provides conductive carbon nanotube (CNT) electrode materials comprising aligned CNT substrates coated with an electrically conducting polymer, and the fabrication of electrodes for use in high performance electrical energy storage devices. In particular, the present invention provides conductive CNTs electrode material whose electrical properties render them especially suitable for use in high efficiency rechargeable batteries. The present invention also provides methods for obtaining surface modified conductive CNT electrode materials comprising an array of individual linear, aligned CNTs having a uniform surface coating of an electrically conductive polymer such as polypyrrole, and their use in electrical energy storage devices.

  6. Coated carbon nanotube array electrodes

    DOEpatents

    Ren, Zhifeng; Wen, Jian; Chen, Jinghua; Huang, Zhongping; Wang, Dezhi

    2006-12-12

    The present invention provides conductive carbon nanotube (CNT) electrode materials comprising aligned CNT substrates coated with an electrically conducting polymer, and the fabrication of electrodes for use in high performance electrical energy storage devices. In particular, the present invention provides conductive CNTs electrode material whose electrical properties render them especially suitable for use in high efficiency rechargeable batteries. The present invention also provides methods for obtaining surface modified conductive CNT electrode materials comprising an array of individual linear, aligned CNTs having a uniform surface coating of an electrically conductive polymer such as polypyrrole, and their use in electrical energy storage devices.

  7. Carbon nanotube growth density control

    NASA Technical Reports Server (NTRS)

    Delzeit, Lance D. (Inventor); Schipper, John F. (Inventor)

    2010-01-01

    Method and system for combined coarse scale control and fine scale control of growth density of a carbon nanotube (CNT) array on a substrate, using a selected electrical field adjacent to a substrate surface for coarse scale density control (by one or more orders of magnitude) and a selected CNT growth temperature range for fine scale density control (by multiplicative factors of less than an order of magnitude) of CNT growth density. Two spaced apart regions on a substrate may have different CNT growth densities and/or may use different feed gases for CNT growth.

  8. Carbon nanotube interaction with DNA.

    PubMed

    Lu, Gang; Maragakis, Paul; Kaxiras, Efthimios

    2005-05-01

    We investigate a system consisting of B-DNA and an array of (10,0) carbon nanotubes periodically arranged to fit into the major groove of the DNA. We obtain an accurate electronic structure of the combined system, which reveals that it is semiconducting and that the bands on either end of the gap are derived exclusively from one of the two components. We discuss in detail how this system can be used as either an electronic switch involving transport through both components, or as a device for ultrafast DNA sequencing.

  9. Computer generated holograms for carbon nanotube arrays

    NASA Astrophysics Data System (ADS)

    Montelongo, Yunuen; Butt, Haider; Butler, Tim; Wilkinson, Timothy D.; Amaratunga, Gehan A. J.

    2013-05-01

    Multiwalled carbon nanotubes are highly diffractive structures in the optical regime. Their metallic character and large scattering cross-section allow their usage as diffractive elements in Fraunhofer holograms. This work elaborates some important features of the far field diffraction patterns produced from periodic arrays of nanotubes. A theoretical approach for the interaction of arrays of nanotubes with light is presented and a computer generated hologram is calculated by means of periodical patterns. Based on the results, fabrication of carbon nanotube arrays (in holographic patterns) was performed. Experimentally measured diffraction patterns were in good agreement with the calculations.

  10. Computer generated holograms for carbon nanotube arrays.

    PubMed

    Montelongo, Yunuen; Butt, Haider; Butler, Tim; Wilkinson, Timothy D; Amaratunga, Gehan A J

    2013-05-21

    Multiwalled carbon nanotubes are highly diffractive structures in the optical regime. Their metallic character and large scattering cross-section allow their usage as diffractive elements in Fraunhofer holograms. This work elaborates some important features of the far field diffraction patterns produced from periodic arrays of nanotubes. A theoretical approach for the interaction of arrays of nanotubes with light is presented and a computer generated hologram is calculated by means of periodical patterns. Based on the results, fabrication of carbon nanotube arrays (in holographic patterns) was performed. Experimentally measured diffraction patterns were in good agreement with the calculations.

  11. Electrical Switching in Metallic Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Son, Young-Woo; Ihm, Jisoon; Cohen, Marvin L.; Louie, Steven G.; Choi, Hyoung Joon

    2005-11-01

    We present first-principles calculations of quantum transport which show that the resistance of metallic carbon nanotubes can be changed dramatically with homogeneous transverse electric fields if the nanotubes have impurities or defects. The change of the resistance is predicted to range over more than 2 orders of magnitude with experimentally attainable electric fields. This novel property has its origin that backscattering of conduction electrons by impurities or defects in the nanotubes is strongly dependent on the strength and/or direction of the applied electric fields. We expect this property to open a path to new device applications of metallic carbon nanotubes.

  12. Carbon nanotube materials characterization and devices design

    NASA Astrophysics Data System (ADS)

    Li, Weifeng

    The objective of this research is to characterize the electrical and mechanical properties of Carbon Nanotube (CNT) materials, and explore possible device applications for these materials. In order to achieve this goal, different forms of Carbon Nanotube materials---including Carbon Nanotubes, Carbon Nanotube Arrays, Carbon Nanotube Ribbon, Carbon Nanotube Thread, and sub-micrometer Carbon Nanotube Thread---were tested under a Scanning Electron Microscope (SEM) using a Micromanipulator (MM). Video and sound recording of the testing in the microscope provided new understanding how thread is formed and how nanotube materials fail. As-produced and thermally treated nanotubes were also tested. The main electrical parameters measured were electrical resistivity and maximum current density. The main mechanical property measured was strength. Together, these parameters are helping to determine the strongest and most conductive forms of CNT material. Putting nanotube materials into application is the ultimate goal of this continuing research. Several aggressive application ideas were investigated in a preliminary way in this work. In biomedical applications, a bundle of CNTs was formed for use as an electrode for accurate biosensing. A simple robot was designed using CNT electrical fiber. The robot was powered by two solenoids and could act as an in-body sensor and actuator to perform some impossible tasks from the viewpoint of current medical technology. In aerospace engineering, CNT materials could replace copper wire to reduce the weight of aircraft. Based on the excellent mechanical properties of CNT materials, a challenging idea is to use CNT material to build elevators to move payloads to outer space without using rockets. This dissertation makes contributions in the characterization of nanotube materials and in the design of miniature electromagnetic devices.

  13. Electrostatic gating in carbon nanotube aptasensors.

    PubMed

    Zheng, Han Yue; Alsager, Omar A; Zhu, Bicheng; Travas-Sejdic, Jadranka; Hodgkiss, Justin M; Plank, Natalie O V

    2016-07-14

    Synthetic DNA aptamer receptors could boost the prospects of carbon nanotube (CNT)-based electronic biosensors if signal transduction can be understood and engineered. Here, we report CNT aptasensors for potassium ions that clearly demonstrate aptamer-induced electrostatic gating of electronic conduction. The CNT network devices were fabricated on flexible substrates via a facile solution processing route and non-covalently functionalised with potassium binding aptamers. Monotonic increases in CNT conduction were observed in response to increasing potassium ion concentration, with a level of detection as low as 10 picomolar. The signal was shown to arise from a specific aptamer-target interaction that stabilises a G-quadruplex structure, bringing high negative charge density near the CNT channel. Electrostatic gating is established via the specificity and the sign of the current response, and by observing its suppression when higher ionic strength decreases the Debye length at the CNT-water interface. Sensitivity towards potassium and selectivity against other ions is demonstrated in both resistive mode and real time transistor mode measurements. The effective device architecture presented, along with the identification of clear response signatures, should inform the development of new electronic biosensors using the growing library of aptamer receptors.

  14. Single-walled carbon nanotubes for high-performance electronics.

    PubMed

    Cao, Qing; Han, Shu-jen

    2013-10-07

    Single-walled carbon nanotubes (SWNT) could replace silicon in high-performance electronics with their exceptional electrical properties and intrinsic ultra-thin body. During the past five years, the major focus of this field is gradually shifting from proof-of-concept prototyping in academia to technology development in industry with emphasis on manufacturability and integration issues. This article reviews recent advances, starting with experimental and modeling works that evaluate the potential of adopting SWNTs in ultimately scaled transistors. Techniques to separate nanotubes according to their electronic types and assemble them into aligned arrays are then discussed, followed by a description of the engineering aspects in their implementation in integrated circuits and systems. A concluding discussion provides some perspectives on future challenges and research opportunities.

  15. Aligned carbon nanotubes: from controlled synthesis to electronic applications

    NASA Astrophysics Data System (ADS)

    Liu, Bilu; Wang, Chuan; Liu, Jia; Che, Yuchi; Zhou, Chongwu

    2013-09-01

    Single-wall carbon nanotubes (SWNTs) possess superior geometrical, electronic, chemical, thermal, and mechanical properties and are very attractive for applications in electronic devices and circuits. To make this a reality, the nanotube orientation, density, diameter, electronic property, and even chirality should be well controlled. This Feature article focuses on recent achievements researchers have made on the controlled growth of horizontally aligned SWNTs and SWNT arrays on substrates and their electronic applications. Principles and strategies to control the morphology, structure, and properties of SWNTs are reviewed in detail. Furthermore, electrical properties of field-effect transistors fabricated on both individual SWNTs and aligned SWNT arrays are discussed. State-of-the-art electronic devices and circuits based on aligned SWNTs and SWNT arrays are also highlighted.

  16. Development of Carbon-Nanotube/Polymer Composites

    NASA Technical Reports Server (NTRS)

    Reynolds, Thomas A.

    2005-01-01

    A report presents a short discussion of one company's effort to develop composites of carbon nanotubes in epoxy and other polymer matrices. The focus of the discussion is on the desirability of chemically modifying carbon nanotubes to overcome their inherent chemical nonreactivity and thereby enable the formation of strong chemical bonds between nanotubes and epoxies (or other polymeric matrix materials or their monomeric precursors). The chemical modification is effected in a process in which discrete functional groups are covalently attached to the nanotube surfaces. The functionalization process was proposed by the company and demonstrated in practice for the first time during this development effort. The covalently attached functional groups are capable of reacting with the epoxy or other matrix resin to form covalent bonds. Furthermore, the company uses this process to chemically modify the nanotube surfaces, affording tunable adhesion to polymers and solubility in select solvents. Flat-sheet composites containing functionalized nanotubes demonstrate significantly improved mechanical, thermal, and electrical properties.

  17. Stress Calculations for Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Halicioglu, Timur; Langhoff, Stephen R. (Technical Monitor)

    1996-01-01

    Atomic stresses were calculated for carbon nanotubes under strain conditions. Graphitic tubules with radii ranging from approximately 2 to 11 Angstroms and two different tubule structures with varying atomic orientations were included in the calculations. Elongations and contractions were applied in the axial direction and atomic stress values were calculated for infinitely long tubules. The calculations were carried out using Brenner's function which was developed for carbon species. Results indicate that the stress is tensile in the radial direction while it is compressive in the tangential direction. Variations in stress values in the direction of the cylindrical aids were investigated as a function of applied strain. Furthermore, using the stress-strain curve (calculated based on atomic considerations), the values of Young's modulus and Poisson's ratio for nanotubules were also estimated.

  18. A Tester for Carbon Nanotube Mode Lockers

    NASA Astrophysics Data System (ADS)

    Song, Yong-Won; Yamashita, Shinji

    2007-05-01

    We propose and demonstrate a tester for laser pulsating operation of carbon nanotubes employing a circulator with the extra degree of freedom of the second port to access diversified nanotube samples. The nanotubes are deposited onto the end facet of a dummy optical fiber by spray method that guarantees simple sample loading along with the minimized perturbation of optimized laser cavity condition. Resultant optical spectra, autocorrelation traces and pulse train of the laser outputs with qualified samples are presented.

  19. Pointwise plucking of suspended carbon nanotubes.

    PubMed

    Luo, Jun; Ouyang, Wengen; Li, Xiaopei; Jin, Zhong; Yang, Leijing; Chen, Changqing; Zhang, Jin; Li, Yan; Warner, Jamie H; Peng, Lian-Mao; Zheng, Quanshui; Zhu, Jing

    2012-07-11

    Vibration of nanotubes/wires is significant for fundamental and applied researches. However, it remains challenging to control the vibration with point-level precision. Herein, individual suspended carbon nanotubes are plucked point by point to vibrate in scanning electron microscope with the electron beam as a nanoscale pointer. The vibration is directly imaged, and its images fit well with simulations from the plucking mechanism. This demonstrates a new way to manipulate the nanotube vibration with unprecedented precision.

  20. Si/Ge hetero-structure nanotube tunnel field effect transistor

    SciTech Connect

    Hanna, A. N.; Hussain, M. M.

    2015-01-07

    We discuss the physics of conventional channel material (silicon/germanium hetero-structure) based transistor topology mainly core/shell (inner/outer) gated nanotube vs. gate-all-around nanowire architecture for tunnel field effect transistor application. We show that nanotube topology can result in higher performance through higher normalized current when compared to nanowire architecture at V{sub dd} = 1 V due to the availability of larger tunneling cross section and lower Shockley-Reed-Hall recombination. Both architectures are able to achieve sub 60 mV/dec performance for more than five orders of magnitude of drain current. This enables the nanotube configuration achieving performance same as the nanowire architecture even when V{sub dd} is scaled down to 0.5 V.

  1. Electric field dependence of photoluminescence from individual single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Yasukochi, S.; Murai, T.; Shimada, T.; Chiashi, S.; Maruyama, S.; Kato, Y. K.

    2011-03-01

    Using suspended single-walled carbon nanotubes, we investigate electric field effects on photoluminescence. Trenches are fabricated on Si O2 /Si substrates, and Pt is deposited for electrical contacts. Carbon nanotubes are grown by patterned chemical vapor deposition. These devices operate as back-gate field effect transistors, allowing application of electric fields on as-grown ultraclean nanotubes. Individual suspended carbon nanotubes are identified by taking photoluminescence images using a home-built laser-scanning confocal microscope. After determining the chirality by photoluminescence excitation spectra, we measure gate voltage dependence of photoluminescence. We observe quenching of photoluminescence intensity and shifts of emission wavelength as gate voltages are applied. This work is supported by KAKENHI, Mizuho Foundation for the Promotion of Sciences, Research Foundation for Opto-Science and Technology, TEPCO Research Foundation, SCAT, SCOPE, and Photon Frontier Network Program of MEXT, Japan.

  2. Application of carbon nanotubes and graphene for digital and analog electronics

    NASA Astrophysics Data System (ADS)

    Badmaev, Alexander

    2011-07-01

    Carbon nanomaterials, one-dimensional (1D) carbon nanotubes and two-dimensional (2D) graphene, exhibit the highest electron mobility (˜100,000 cm 2/V/s at room temperature) among all conductors, and huge current carrying capacity of more than 109 A/cm2. Additionally, single-atomic thickness provides ideal electrostatic geometry for field effect devices. These properties make carbon nanomaterials to be strong candidates to replace or supplement conventional semiconductors. Theoretical and experimental studies on individual nanotubes and graphene flakes demonstrated superior performance of carbon based field-effect transistors (FETs). However, in order to realize this potential in electronic applications, scalable synthesis and assembly of carbon nanomaterials, as well as further devices design and fabrication, still remain to be a significant challenge. In this thesis, I present our developments in order to overcome some of the critical problems in practical implementation of carbon based electronics. In our approaches, we address issues starting from the scalable controllable synthesis of carbon nanomaterials and their assembly, including design of electronic devices and material methods for their fabrication, and, finally, integration of these devices into functional circuits. This broad range of issues is tightly and often inseparably inter-connected with each other, as can be seen from an example of very large scale integrated (VLSI) silicon electronics, therefore, ultimately presenting one major goal of developing carbon based electronics. The structure of the thesis is as follows. Chapter 1 gives introduction to nano-scale carbon materials, their electronic properties and problems towards realization of carbon-based electronics. Chapter 2 presents chemical vapor deposition (CVD) methods for synthesis of carbon nanotubes and graphene. CVD synthesis methods proved to be highly promising for large scale synthesis of high quality carbon nanomaterials. The

  3. Enzymatic degradation of multiwalled carbon nanotubes.

    PubMed

    Zhao, Yong; Allen, Brett L; Star, Alexander

    2011-09-01

    Because of their unique properties, carbon nanotubes and, in particular, multiwalled carbon nanotubes (MWNTs) have been used for the development of advanced composite and catalyst materials. Despite their growing commercial applications and increased production, the potential environmental and toxicological impacts of MWNTs are not fully understood; however, many reports suggest that they may be toxic. Therefore, a need exists to develop protocols for effective and safe degradation of MWNTs. In this article, we investigated the effect of chemical functionalization of MWNTs on their enzymatic degradation with horseradish peroxidase (HRP) and hydrogen peroxide (H(2)O(2)). We investigated HRP/H(2)O(2) degradation of purified, oxidized, and nitrogen-doped MWNTs and proposed a layer-by-layer degradation mechanism of nanotubes facilitated by side wall defects. These results provide a better understanding of the interaction between HRP and carbon nanotubes and suggest an eco-friendly way of mitigating the environmental impact of nanotubes.

  4. Methods for producing reinforced carbon nanotubes

    DOEpatents

    Ren, Zhifen; Wen, Jian Guo; Lao, Jing Y.; Li, Wenzhi

    2008-10-28

    Methods for producing reinforced carbon nanotubes having a plurality of microparticulate carbide or oxide materials formed substantially on the surface of such reinforced carbon nanotubes composite materials are disclosed. In particular, the present invention provides reinforced carbon nanotubes (CNTs) having a plurality of boron carbide nanolumps formed substantially on a surface of the reinforced CNTs that provide a reinforcing effect on CNTs, enabling their use as effective reinforcing fillers for matrix materials to give high-strength composites. The present invention also provides methods for producing such carbide reinforced CNTs.

  5. Characterization of Carbon Nanotube Reinforced Nickel

    NASA Technical Reports Server (NTRS)

    Gill, Hansel; Hudson, Steve; Bhat, Biliyar; Munafo, Paul M. (Technical Monitor)

    2002-01-01

    Carbon nanotubes are cylindrical molecules composed of carbon atoms in a regular hexagonal arrangement. If nanotubes can be uniformly dispersed in a supporting matrix to form structural materials, the resulting structures could be significantly lighter and stronger than current aerospace materials. Work is currently being done to develop an electrolyte-based self-assembly process that produces a Carbon Nanotube/Nickel composite material with high specific strength. This process is expected to produce a lightweight metal matrix composite material, which maintains it's thermal and electrical conductivities, and is potentially suitable for applications such as advanced structures, space based optics, and cryogenic tanks.

  6. Carbon nanotube fiber spun from wetted ribbon

    DOEpatents

    Zhu, Yuntian T; Arendt, Paul; Zhang, Xiefei; Li, Qingwen; Fu, Lei; Zheng, Lianxi

    2014-04-29

    A fiber of carbon nanotubes was prepared by a wet-spinning method involving drawing carbon nanotubes away from a substantially aligned, supported array of carbon nanotubes to form a ribbon, wetting the ribbon with a liquid, and spinning a fiber from the wetted ribbon. The liquid can be a polymer solution and after forming the fiber, the polymer can be cured. The resulting fiber has a higher tensile strength and higher conductivity compared to dry-spun fibers and to wet-spun fibers prepared by other methods.

  7. Carbon Nanotubes for Human Space Flight

    NASA Technical Reports Server (NTRS)

    Scott, Carl D.; Files, Brad; Yowell, Leonard

    2003-01-01

    Single-wall carbon nanotubes offer the promise of a new class of revolutionary materials for space applications. The Carbon Nanotube Project at NASA Johnson Space Center has been actively researching this new technology by investigating nanotube production methods (arc, laser, and HiPCO) and gaining a comprehensive understanding of raw and purified material using a wide range of characterization techniques. After production and purification, single wall carbon nanotubes are processed into composites for the enhancement of mechanical, electrical, and thermal properties. This "cradle-to-grave" approach to nanotube composites has given our team unique insights into the impact of post-production processing and dispersion on the resulting material properties. We are applying our experience and lessons-learned to developing new approaches toward nanotube material characterization, structural composite fabrication, and are also making advances in developing thermal management materials and electrically conductive materials in various polymer-nanotube systems. Some initial work has also been conducted with the goal of using carbon nanotubes in the creation of new ceramic materials for high temperature applications in thermal protection systems. Human space flight applications such as advanced life support and fuel cell technologies are also being investigated. This discussion will focus on the variety of applications under investigation.

  8. Covalent enzyme immobilization onto carbon nanotubes using a membrane reactor

    NASA Astrophysics Data System (ADS)

    Voicu, Stefan Ioan; Nechifor, Aurelia Cristina; Gales, Ovidiu; Nechifor, Gheorghe

    2011-05-01

    Composite porous polysulfone-carbon nanotubes membranes were prepared by dispersing carbon nanotubes into a polysulfone solution followed by the membrane formation by phase inversion-immersion precipitation technique. The carbon nanotubes with amino groups on surface were functionalized with different enzymes (carbonic anhydrase, invertase, diastase) using cyanuric chloride as linker between enzyme and carbon nanotube. The composite membrane was used as a membrane reactor for a better dispersion of carbon nanotubes and access to reaction centers. The membrane also facilitates the transport of enzymes to active carbon nanotubes centers for functionalization (amino groups). The functionalized carbon nanotubes are isolated by dissolving the membranes after the end of reaction. Carbon nanotubes with covalent immobilized enzymes are used for biosensors fabrications. The obtained membranes were characterized by Scanning Electron Microscopy, Thermal analysis, FT-IR Spectroscopy, Nuclear Magnetic Resonance, and functionalized carbon nanotubes were characterized by FT-IR spectroscopy.

  9. Applications and production of carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Hafner, Jason Howard

    Carbon nanotubes, a recently discovered form of carbon fiber with structural perfection similar to that of a fullerene molecule, have interesting electronic, chemical and mechanical properties due to their size and structure. Nanotubes have great potential as a bulk material for strong, lightweight composite materials, and as individual nano-scale tools or devices. Initial work on applications with individual multiwalled nanotubes as field emission sources and scanning force microscopy tips is described. The nanotubes display intriguing field emission behavior interpreted as the nanotube unraveling under the influence of the electric field. The unraveling process is believed to result in facile field emission from linear atomic carbon chains at the end of the nanotube. Such atomic wires represent an excellent field emitter. The work on multiwalled nanotube SFM tips was equally encouraging. The high aspect ratio of the nanotube allows it to image deep trenches inaccessible to commercially available Si pyramidal tips, and it reduces the interaction with the ambient water layer on the sample which perturbs image quality. The most remarkable advantage of nanotube SFM tips is a result of their mechanical properties. It was found that the nanotubes will remain rigid during normal imaging, but conveniently buckle to the side if circumstances arise which create large forces known to damage the tip and sample. This feature makes the tip more durable than Si tips, and is especially important for soft biological samples. In these two applications, as well as others, and in the measurements of novel nanotube properties, high quality, small diameter (0.5 to 2 nm) diameter single-walled nanotubes are most interesting. Such material can be produced slowly and in small amounts by catalytic arc vaporization and catalytic laser vaporization of graphite. It is well known that nanotubes can be mass produced by catalytic chemical vapor deposition (CCVD), but the product consists only

  10. Flightweight Carbon Nanotube Magnet Technology

    NASA Technical Reports Server (NTRS)

    Chapman, J. N.; Schmidt, H. J.; Ruoff, R. S.; Chandrasekhar, V.; Dikin, D. A.; Litchford, R. J.

    2003-01-01

    Virtually all plasma-based systems for advanced airborne/spaceborne propulsion and power depend upon the future availability of flightweight magnet technology. Unfortunately, current technology for resistive and superconducting magnets yields system weights that tend to counteract the performance advantages normally associated with advanced plasma-based concepts. The ongoing nanotechnology revolution and the continuing development of carbon nanotubes (CNT), however, may ultimately relieve this limitation in the near future. Projections based on recent research indicate that CNTs may achieve current densities at least three orders of magnitude larger than known superconductors and mechanical strength two orders of magnitude larger than steel. In fact, some published work suggests that CNTs are superconductors. Such attributes imply a dramatic increase in magnet performance-to-weight ratio and offer real hope for the construction of true flightweight magnets. This Technical Publication reviews the technology status of CNTs with respect to potential magnet applications and discusses potential techniques for using CNT wires and ropes as a winding material and as an integral component of the containment structure. The technology shortfalls are identified and a research and technology strategy is described that addresses the following major issues: (1) Investigation and verification of mechanical and electrical properties, (2) development of tools for manipulation and fabrication on the nanoscale, (3) continuum/molecular dynamics analysis of nanotube behavior when exposed to practical bending and twisting loads, and (4) exploration of innovative magnet fabrication techniques that exploit the natural attributes of CNTs.

  11. Synthesis, properties and applications of 3D carbon nanotube-graphene junctions

    NASA Astrophysics Data System (ADS)

    Lin, Chun-Yu; Zhao, Zhenghang; Niu, Jianbing; Xia, Zhenhai

    2016-11-01

    Integration of 1D carbon nanotubes and 2D graphene sheets through covalent bonding can create novel 3D nanoporous hybrid nanostructures that inherit unique mechanical, thermal, electrical and chemical properties of their building blocks and even have new properties in three dimensions. Great progress has been made in developing 3D carbon nanotube-graphene nanoarchitectures for various applications such as mechanical cushions, thermal sinkers, transistors, and renewable energy conversion. This review presents the recent advances in synthesis and analysis of the 3D nanostructures. Emphasis is put on design principles, molecular structures, processes and properties of the materials.

  12. Deconvoluting hepatic processing of carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Alidori, Simone; Bowman, Robert L.; Yarilin, Dmitry; Romin, Yevgeniy; Barlas, Afsar; Mulvey, J. Justin; Fujisawa, Sho; Xu, Ke; Ruggiero, Alessandro; Riabov, Vladimir; Thorek, Daniel L. J.; Ulmert, Hans David S.; Brea, Elliott J.; Behling, Katja; Kzhyshkowska, Julia; Manova-Todorova, Katia; Scheinberg, David A.; McDevitt, Michael R.

    2016-07-01

    Single-wall carbon nanotubes present unique opportunities for drug delivery, but have not advanced into the clinic. Differential nanotube accretion and clearance from critical organs have been observed, but the mechanism not fully elucidated. The liver has a complex cellular composition that regulates a range of metabolic functions and coincidently accumulates most particulate drugs. Here we provide the unexpected details of hepatic processing of covalently functionalized nanotubes including receptor-mediated endocytosis, cellular trafficking and biliary elimination. Ammonium-functionalized fibrillar nanocarbon is found to preferentially localize in the fenestrated sinusoidal endothelium of the liver but not resident macrophages. Stabilin receptors mediate the endocytic clearance of nanotubes. Biocompatibility is evidenced by the absence of cell death and no immune cell infiltration. Towards clinical application of this platform, nanotubes were evaluated for the first time in non-human primates. The pharmacologic profile in cynomolgus monkeys is equivalent to what was reported in mice and suggests that nanotubes should behave similarly in humans.

  13. Carbon Nanotube Composites: Strongest Engineering Material Ever?

    NASA Technical Reports Server (NTRS)

    Mayeaux, Brian; Nikolaev, Pavel; Proft, William; Nicholson, Leonard S. (Technical Monitor)

    1999-01-01

    The primary goal of the carbon nanotube project at Johnson Space Center (JSC) is to fabricate structural materials with a much higher strength-to-weight ratio than any engineered material today, Single-wall nanotubes present extraordinary mechanical properties along with new challenges for materials processing. Our project includes nanotube production, characterization, purification, and incorporation into applications studies. Now is the time to move from studying individual nanotubes to applications work. Current research at JSC focuses on structural polymeric materials to attempt to lower the weight of spacecraft necessary for interplanetary missions. These nanoscale fibers present unique new challenges to composites engineers. Preliminary studies show good nanotube dispersion and wetting by the epoxy materials. Results of tensile strength tests will also be reported. Other applications of nanotubes are also of interest for energy storage, gas storage, nanoelectronics, field emission, and biomedical uses.

  14. Double-walled carbon nanotube solar cells.

    PubMed

    Wei, Jinquan; Jia, Yi; Shu, Qinke; Gu, Zhiyi; Wang, Kunlin; Zhuang, Daming; Zhang, Gong; Wang, Zhicheng; Luo, Jianbin; Cao, Anyuan; Wu, Dehai

    2007-08-01

    We directly configured double-walled carbon nanotubes as energy conversion materials to fabricate thin-film solar cells, with nanotubes serving as both photogeneration sites and a charge carriers collecting/transport layer. The solar cells consist of a semitransparent thin film of nanotubes conformally coated on a n-type crystalline silicon substrate to create high-density p-n heterojunctions between nanotubes and n-Si to favor charge separation and extract electrons (through n-Si) and holes (through nanotubes). Initial tests have shown a power conversion efficiency of >1%, proving that DWNTs-on-Si is a potentially suitable configuration for making solar cells. Our devices are distinct from previously reported organic solar cells based on blends of polymers and nanomaterials, where conjugate polymers generate excitons and nanotubes only serve as a transport path.

  15. Purification of Carbon Nanotubes: Alternative Methods

    NASA Technical Reports Server (NTRS)

    Files, Bradley; Scott, Carl; Gorelik, Olga; Nikolaev, Pasha; Hulse, Lou; Arepalli, Sivaram

    2000-01-01

    Traditional carbon nanotube purification process involves nitric acid refluxing and cross flow filtration using surfactant TritonX. This is believed to result in damage to nanotubes and surfactant residue on nanotube surface. Alternative purification procedures involving solvent extraction, thermal zone refining and nitric acid refiuxing are used in the current study. The effect of duration and type of solvent to dissolve impurities including fullerenes and P ACs (polyaromatic compounds) are monitored by nuclear magnetic reasonance, high performance liquid chromatography, and thermogravimetric analysis. Thermal zone refining yielded sample areas rich in nanotubes as seen by scanning electric microscopy. Refluxing in boiling nitric acid seem to improve the nanotube content. Different procedural steps are needed to purify samples produced by laser process compared to arc process. These alternative methods of nanotube purification will be presented along with results from supporting analytical techniques.

  16. Carbon nanotubes as field emitter.

    PubMed

    Zou, Rujia; Hu, Junqing; Song, Yuelin; Wang, Na; Chen, Huihui; Chen, Haihua; Wu, Jianghong; Sun, Yangang; Chen, Zhigang

    2010-12-01

    Carbon nanotubes (CNTs) have recently emerged as a promising material of electron field emitters. They exhibit extraordinary field emission properties because of their high electrical conductivity, high aspect ratio "needle like" shape for optimum geometrical field enhancement, and remarkable thermal stability. In this Review, we emphasize the estimation and influencing factors of CNTs' emission properties, and discuss in detail the emission properties of macroscopic CNT cathodes, especially fabricated by transplant methods, and describe recent progress on understanding of CNT field emitters and analyze issues related to applications of CNT based cold cathodes in field emission display (FED). We foresee that CNT-FED will take an important place in display technologies in the near future.

  17. Carbon Nanotube Based Light Sensor

    NASA Technical Reports Server (NTRS)

    Wincheski, russell A. (Inventor); Smits, Jan M. (Inventor); Jordan, Jeffrey D. (Inventor); Watkins, Anthony Neal (Inventor); Ingram, JoAnne L. (Inventor)

    2006-01-01

    A light sensor substrate comprises a base made from a semi-conductive material and topped with a layer of an electrically non-conductive material. A first electrode and a plurality of carbon nanotube (CNT)-based conductors are positioned on the layer of electrically non-conductive material with the CNT-based conductors being distributed in a spaced apart fashion about a periphery of the first electrode. Each CNT-based conductor is coupled on one end thereof to the first electrode and extends away from the first electrode to terminate at a second free end. A second or gate electrode is positioned on the non-conductive material layer and is spaced apart from the second free end of each CNT-based conductor. Coupled to the first and second electrode is a device for detecting electron transfer along the CNT-based conductors resulting from light impinging on the CNT-based conductors.

  18. Photonics based on carbon nanotubes

    PubMed Central

    2013-01-01

    Among direct-bandgap semiconducting nanomaterials, single-walled carbon nanotubes (SWCNT) exhibit strong quasi-one-dimensional excitonic optical properties, which confer them a great potential for their integration in future photonics devices as an alternative solution to conventional inorganic semiconductors. In this paper, we will highlight SWCNT optical properties for passive as well as active applications in future optical networking. For passive applications, we directly compare the efficiency and power consumption of saturable absorbers (SAs) based on SWCNT with SA based on conventional multiple quantum wells. For active applications, exceptional photoluminescence properties of SWCNT, such as excellent light-emission stabilities with temperature and excitation power, hold these nanometer-scale materials as prime candidates for future active photonics devices with superior performances. PMID:23803293

  19. Functionalized carbon nanotubes: biomedical applications

    PubMed Central

    Vardharajula, Sandhya; Ali, Sk Z; Tiwari, Pooja M; Eroğlu, Erdal; Vig, Komal; Dennis, Vida A; Singh, Shree R

    2012-01-01

    Carbon nanotubes (CNTs) are emerging as novel nanomaterials for various biomedical applications. CNTs can be used to deliver a variety of therapeutic agents, including biomolecules, to the target disease sites. In addition, their unparalleled optical and electrical properties make them excellent candidates for bioimaging and other biomedical applications. However, the high cytotoxicity of CNTs limits their use in humans and many biological systems. The biocompatibility and low cytotoxicity of CNTs are attributed to size, dose, duration, testing systems, and surface functionalization. The functionalization of CNTs improves their solubility and biocompatibility and alters their cellular interaction pathways, resulting in much-reduced cytotoxic effects. Functionalized CNTs are promising novel materials for a variety of biomedical applications. These potential applications are particularly enhanced by their ability to penetrate biological membranes with relatively low cytotoxicity. This review is directed towards the overview of CNTs and their functionalization for biomedical applications with minimal cytotoxicity. PMID:23091380

  20. Functionalized carbon nanotubes: biomedical applications.

    PubMed

    Vardharajula, Sandhya; Ali, Sk Z; Tiwari, Pooja M; Eroğlu, Erdal; Vig, Komal; Dennis, Vida A; Singh, Shree R

    2012-01-01

    Carbon nanotubes (CNTs) are emerging as novel nanomaterials for various biomedical applications. CNTs can be used to deliver a variety of therapeutic agents, including biomolecules, to the target disease sites. In addition, their unparalleled optical and electrical properties make them excellent candidates for bioimaging and other biomedical applications. However, the high cytotoxicity of CNTs limits their use in humans and many biological systems. The biocompatibility and low cytotoxicity of CNTs are attributed to size, dose, duration, testing systems, and surface functionalization. The functionalization of CNTs improves their solubility and biocompatibility and alters their cellular interaction pathways, resulting in much-reduced cytotoxic effects. Functionalized CNTs are promising novel materials for a variety of biomedical applications. These potential applications are particularly enhanced by their ability to penetrate biological membranes with relatively low cytotoxicity. This review is directed towards the overview of CNTs and their functionalization for biomedical applications with minimal cytotoxicity.

  1. Carbon Nanotube Tape Vibrating Gyroscope

    NASA Technical Reports Server (NTRS)

    Tucker, Dennis Stephen (Inventor)

    2016-01-01

    A vibrating gyroscope includes a piezoelectric strip having length and width dimensions. The piezoelectric strip includes a piezoelectric material and carbon nanotubes (CNTs) substantially aligned and polled along the strip's length dimension. A spindle having an axis of rotation is coupled to the piezoelectric strip. The axis of rotation is parallel to the strip's width dimension. A first capacitance sensor is mechanically coupled to the spindle for rotation therewith. The first capacitance sensor is positioned at one of the strip's opposing ends and is spaced apart from one of the strip's opposing faces. A second capacitance sensor is mechanically coupled to the spindle for rotation therewith. The second capacitance sensor is positioned at another of the strip's opposing ends and is spaced apart from another of the strip's opposing faces. A voltage source applies an AC voltage to the piezoelectric strip.

  2. Carbon nanotube polymer composition and devices

    DOEpatents

    Liu, Gao; Johnson, Stephen; Kerr, John B.; Minor, Andrew M.; Mao, Samuel S.

    2011-06-14

    A thin film device and compound having an anode, a cathode, and at least one light emitting layer between the anode and cathode, the at least one light emitting layer having at least one carbon nanotube and a conductive polymer.

  3. Carbon nanotube heat-exchange systems

    DOEpatents

    Hendricks, Terry Joseph; Heben, Michael J.

    2008-11-11

    A carbon nanotube heat-exchange system (10) and method for producing the same. One embodiment of the carbon nanotube heat-exchange system (10) comprises a microchannel structure (24) having an inlet end (30) and an outlet end (32), the inlet end (30) providing a cooling fluid into the microchannel structure (24) and the outlet end (32) discharging the cooling fluid from the microchannel structure (24). At least one flow path (28) is defined in the microchannel structure (24), fluidically connecting the inlet end (30) to the outlet end (32) of the microchannel structure (24). A carbon nanotube structure (26) is provided in thermal contact with the microchannel structure (24), the carbon nanotube structure (26) receiving heat from the cooling fluid in the microchannel structure (24) and dissipating the heat into an external medium (19).

  4. Fabrication of porous carbon nanotube network.

    PubMed

    Su, Jun-Wei; Fu, Shu-Juan; Gwo, Shangjr; Lin, Kuan-Jiuh; Lin, Kuna-Jiuh

    2008-11-21

    We used the spin-coating method combined with ultrasonic atomization as a continuous, one-step process to generate a two-dimensional honeycomb network that was constructed from pure multi-walled carbon nanotubes.

  5. Controlled growth and assembly of single-walled carbon nanotubes for nanoelectronics

    NASA Astrophysics Data System (ADS)

    Omrane, Badr

    carbon nanotube growth and applications, was demonstrated. Chemical vapor deposition growth of the patterned regions shows individual and bundles of single-walled carbon nanotubes. This was confirmed by Raman spectroscopy of the samples, giving single-walled carbon nanotubes ˜1-2 nm in diameter. The capabilities of the nanowriting process were also explored for direct-writing of carbon based nanomaterials such as single-walled carbon nanotubes and C 60 molecules. Finally, a brief survey on carbon nanotube field-effect transistor modeling tools has been presented, followed by two-terminal current-voltage measurements on colloidal lithography and nanowriting samples. Results show primarily ohmic behavior with conductances of ˜0.86-16.5 muS for the hexagonal catalyst array patterned samples for various geometries and ˜0.27-1 muS for the nanowriting samples. In addition, compact models have been used to gain insights into the device performance and the unique advantages of the hexagonal array approach over devices fabricated using parallel or randomly distributed SWCNTs. Device performance appears to be determined primarily by the contact resistance which includes both Schottky barrier resistances and an interface resistance. In summary, colloidal lithography and direct-writing of single-walled carbon nanotube catalyst have been used to achieve the controlled growth and assembly of carbon nanotubes. Electronic transport of carbon nanotube devices fabricated using these two methods showed near ohmic behavior with device performance modeled primarily by the contact resistance. The approaches developed in this thesis allow nanoscale control over catalyst deposition and nanotube growth which makes them promising for the fabrication of future carbon nanotube electronic devices.

  6. Lateral force microscopy of multiwalled carbon nanotubes.

    PubMed

    Lievonen, J; Ahlskog, M

    2009-06-01

    Carbon nanotubes are usually imaged with the atomic force microscope (AFM) in non-contact mode. However, in many applications, such as mechanical manipulation or elasticity measurements, contact mode is used. The forces affecting the nanotube are then considerable and not fully understood. In this work lateral forces were measured during contact mode imaging with an AFM across a carbon nanotube. We found that, qualitatively, both magnitude and sign of the lateral forces to the AFM tip were independent of scan direction and can be concluded to arise from the tip slipping on the round edges of the nanotube. The dependence on the normal force applied to the tip and on the ratio between nanotube diameter and tip radius was studied. We show that for small values of this ratio, the lateral force signal can be explained with a simple geometrical model.

  7. [Hygienic evaluation of multilayer carbon nanotubes].

    PubMed

    Haliullin, T O; Zalyalov, R R; Shvedova, A A; Tkachov, A G

    2015-01-01

    The authors demonstrate that traditional methods evaluating work conditions on contemporary innovative enterprises producing nanomaterials assess these conditions as harmless and safe. At the same time, special investigation methods enable to reveal new hazards for workers' health: the study results prove that workers engaged into multilayer carbon nanotubes production are exposed to multilayer carbon nanotubes aerosols in concentrations exceeding internationally acceptable levels of 1 μg/ml (NIOSH)--that can harm the workers' health.

  8. Controlled Deposition and Alignment of Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Smits, Jan M. (Inventor); Wincheski, Russell A. (Inventor); Ingram, JoAnne L. (Inventor); Watkins, Anthony Neal (Inventor); Jordan, Jeffrey D. (Inventor)

    2009-01-01

    A carbon nanotube (CNT) attraction material is deposited on a substrate in the gap region between two electrodes on the . substrate. An electric potential is applied to the two electrodes. The CNT attraction material is wetted with a solution defined by a carver liquid having carbon nanotubes (CNTs) suspended therein. A portion of the CNTs align with the electric field and adhere to The CNT attraction material. The carrier liquid and any CNTs not adhered to the CNT attraction material are then removed.

  9. Controlled Deposition and Alignment of Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Smits, Jan M. (Inventor); Wincheski, Russell A. (Inventor); Patry, JoAnne L. (Inventor); Watkins, Anthony Neal (Inventor); Jordan, Jeffrey D. (Inventor)

    2012-01-01

    A carbon nanotube (CNT) attraction material is deposited on a substrate in the gap region between two electrodes on the substrate. An electric potential is applied to the two electrodes. The CNT attraction material is wetted with a solution defined by a carrier liquid having carbon nanotubes (CNTs) suspended therein. A portion of the CNTs align with the electric field and adhere to the CNT attraction material. The carrier liquid and any CNTs not adhered to the CNT attraction material are then removed.

  10. Nanoparticle Decoration of Carbon Nanotubes by Sputtering

    DTIC Science & Technology

    2013-02-01

    R E N C E S [1] Claussen JC, Franklin AD, Haque AU, Porterfield DM, Fisher TS. Electrochemical biosensor of nanocube-augmented carbon nanotube...applications. Often nanoparti- cles are deposited by electrochemical methods, which gener- ally require time consuming treatments with strong acid for surface...techniques as scalable alternatives to electrochemical treatment for growth of metal nanoparticles on the sidewalls of multi-wall carbon nanotubes (MWCNTs

  11. Carbon nanotube temperature and pressure sensors

    DOEpatents

    Ivanov, Ilia N.; Geohegan, David B.

    2016-12-13

    The present invention, in one embodiment, provides a method of measuring pressure or temperature using a sensor including a sensor element composed of a plurality of carbon nanotubes. In one example, the resistance of the plurality of carbon nanotubes is measured in response to the application of temperature or pressure. The changes in resistance are then recorded and correlated to temperature or pressure. In one embodiment, the present invention provides for independent measurement of pressure or temperature using the sensors disclosed herein.

  12. Carbon nanotube temperature and pressure sensors

    DOEpatents

    Ivanov, Ilia N.; Geohegan, David B.

    2016-11-15

    The present invention, in one embodiment, provides a method of measuring pressure or temperature using a sensor including a sensor element composed of a plurality of carbon nanotubes. In one example, the resistance of the plurality of carbon nanotubes is measured in response to the application of temperature or pressure. The changes in resistance are then recorded and correlated to temperature or pressure. In one embodiment, the present invention provides for independent measurement of pressure or temperature using the sensors disclosed herein.

  13. Carbon nanotube temperature and pressure sensors

    DOEpatents

    Ivanov, Ilia N.; Geohegan, David B.

    2016-10-25

    The present invention, in one embodiment, provides a method of measuring pressure or temperature using a sensor including a sensor element composed of a plurality of carbon nanotubes. In one example, the resistance of the plurality of carbon nanotubes is measured in response to the application of temperature or pressure. The changes in resistance are then recorded and correlated to temperature or pressure. In one embodiment, the present invention provides for independent measurement of pressure or temperature using the sensors disclosed herein.

  14. Carbon nanotube temperature and pressure sensors

    DOEpatents

    Ivanov, Ilia N; Geohegan, David Bruce

    2013-10-29

    The present invention, in one embodiment, provides a method of measuring pressure or temperature using a sensor including a sensor element composed of a plurality of carbon nanotubes. In one example, the resistance of the plurality of carbon nanotubes is measured in response to the application of temperature or pressure. The changes in resistance are then recorded and correlated to temperature or pressure. In one embodiment, the present invention provides for independent measurement of pressure or temperature using the sensors disclosed herein.

  15. TiO{sub 2} nanotube-based field effect transistors and their application as humidity sensors

    SciTech Connect

    Liang, Fengxia; Luo, Lin-Bao; Tsang, Chun-Kwan; Zheng, Lingxia; Cheng, Hua; Li, Yang Yang

    2012-01-15

    Highlights: Black-Right-Pointing-Pointer Individual TiO{sub 2} nanotubes fabricated by directly anodizing a Ti foil followed by ultrasonification. Black-Right-Pointing-Pointer Individual TiO{sub 2} nanotubes used to construct field effect transistors. Black-Right-Pointing-Pointer Electrical properties measured from the TiO{sub 2} nanotube-based field effect transistors. Black-Right-Pointing-Pointer Sensitive response of the TiO{sub 2} nanotube-based field effect transistors to water vapor. -- Abstract: TiO{sub 2} nanotubes are the building units of various devices of energy- and environment-related applications and the property studies of individual TiO{sub 2} nanotubes are important to understand and improve the performance of TiO{sub 2} nanotubes-based devices. Here we report the electrical property study of individual TiO{sub 2} nanotubes enabled by the construction of field effect transistors based on individual TiO{sub 2} nanotubes. It is found that individual TiO{sub 2} nanotubes exhibit typical n-type electrical conduction characteristics, with electron mobility of 6.9 Multiplication-Sign 10{sup -3} cm{sup 2}/V s at V{sub ds} = 1 V, and electron concentration of 2.8 Multiplication-Sign 10{sup 17} cm{sup -3}. Moreover, the on-off ratio of the TiO{sub 2} nanotube-based field effect transistors is as high as 10{sup 3}. Humidity sensing test shows the sensitive response of the individual TiO{sub 2} nanotubes to water vapor.

  16. Filling of carbon nanotubes and nanofibres

    PubMed Central

    Gately, Reece D

    2015-01-01

    Summary The reliable production of carbon nanotubes and nanofibres is a relatively new development, and due to their unique structure, there has been much interest in filling their hollow interiors. In this review, we provide an overview of the most common approaches for filling these carbon nanostructures. We highlight that filled carbon nanostructures are an emerging material for biomedical applications. PMID:25821693

  17. Carbon nanotubes for thermal interface materials in microelectronic packaging

    NASA Astrophysics Data System (ADS)

    Lin, Wei

    As the integration scale of transistors/devices in a chip/system keeps increasing, effective cooling has become more and more important in microelectronics. To address the thermal dissipation issue, one important solution is to develop thermal interface materials with higher performance. Carbon nanotubes, given their high intrinsic thermal and mechanical properties, and their high thermal and chemical stabilities, have received extensive attention from both academia and industry as a candidate for high-performance thermal interface materials. The thesis is devoted to addressing some challenges related to the potential application of carbon nanotubes as thermal interface materials in microelectronics. These challenges include: 1) controlled synthesis of vertically aligned carbon nanotubes on various bulk substrates via chemical vapor deposition and the fundamental understanding involved; 2) development of a scalable annealing process to improve the intrinsic properties of synthesized carbon nanotubes; 3) development of a state-of-art assembling process to effectively implement high-quality vertically aligned carbon nanotubes into a flip-chip assembly; 4) a reliable thermal measurement of intrinsic thermal transport property of vertically aligned carbon nanotube films; 5) improvement of interfacial thermal transport between carbon nanotubes and other materials. The major achievements are summarized. 1. Based on the fundamental understanding of catalytic chemical vapor deposition processes and the growth mechanism of carbon nanotube, fast synthesis of high-quality vertically aligned carbon nanotubes on various bulk substrates (e.g., copper, quartz, silicon, aluminum oxide, etc.) has been successfully achieved. The synthesis of vertically aligned carbon nanotubes on the bulk copper substrate by the thermal chemical vapor deposition process has set a world record. In order to functionalize the synthesized carbon nanotubes while maintaining their good vertical alignment

  18. Method for manufacturing high quality carbon nanotubes

    NASA Technical Reports Server (NTRS)

    Benavides, Jeanette M. (Inventor)

    2006-01-01

    A non-catalytic process for the production of carbon nanotubes includes supplying an electric current to a carbon anode and a carbon cathode which have been securely positioned in the open atmosphere with a gap between them. The electric current creates an electric arc between the carbon anode and the carbon cathode, which causes carbon to be vaporized from the carbon anode and a carbonaceous residue to be deposited on the carbon cathode. Inert gas is pumped into the gap to flush out oxygen, thereby preventing interference with the vaporization of carbon from the anode and preventing oxidation of the carbonaceous residue being deposited on the cathode. The anode and cathode are cooled while electric current is being supplied thereto. When the supply of electric current is terminated, the carbonaceous residue is removed from the cathode and is purified to yield carbon nanotubes.

  19. Device study, chemical doping, and logic circuits based on transferred aligned single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Wang, Chuan; Ryu, Koungmin; Badmaev, Alexander; Patil, Nishant; Lin, Albert; Mitra, Subhasish; Wong, H.-S. Philip; Zhou, Chongwu

    2008-07-01

    In this paper, high-performance back-gated carbon nanotube field-effect transistors based on transferred aligned carbon nanotubes were fabricated and studies found that the on/off ratio can reach 107 and the current density can reach 1.6μA/μm after electrical breakdown. In addition, chemical doping with hydrazine was used to convert the p-type aligned nanotube devices into n-type. These devices were further utilized to demonstrate various logic circuits, including p-type metal-oxide-semiconductor inverters, diode-loaded inverters, complementary metal-oxide-semiconductor inverters, NAND, and NOR gates. This approach could work as the platform for future nanotube-based nanoelectronics.

  20. Method for nano-pumping using carbon nanotubes

    DOEpatents

    Insepov, Zeke; Hassanein, Ahmed

    2009-12-15

    The present invention relates generally to the field of nanotechnology, carbon nanotubes and, more specifically, to a method and system for nano-pumping media through carbon nanotubes. One preferred embodiment of the invention generally comprises: method for nano-pumping, comprising the following steps: providing one or more media; providing one or more carbon nanotubes, the one or more nanotubes having a first end and a second end, wherein said first end of one or more nanotubes is in contact with the media; and creating surface waves on the carbon nanotubes, wherein at least a portion of the media is pumped through the nanotube.

  1. Fast readout of carbon nanotube mechanical resonators

    NASA Astrophysics Data System (ADS)

    Meerwaldt, Harold; Singh, Vibhor; Schneider, Ben; Schouten, Raymond; van der Zant, Herre; Steele, Gary

    2013-03-01

    We perform fast readout measurements of carbon nanotube mechanical resonators. Using an electronic mixing scheme, we can detect the amplitude of the mechanical motion with an intermediate frequency (IF) of 46 MHz and a timeconstant of 1 us, up to 5 orders of magnitude faster than before. Previous measurements suffered from a low bandwidth due to the combination of the high resistance of the carbon nanotube and a large stray capacitance. We have increased the bandwidth significantly by using a high-impedance, close-proximity HEMT amplifier. The increased bandwidth should allow us to observe the nanotube's thermal motion and its transient response, approaching the regime of real-time detection of the carbon nanotube's mechanical motion.

  2. Carbon nanotubes/TiO2 nanotubes hybrid supercapacitor.

    PubMed

    Wang, Qiang; Wen, Zhenhai; Li, Jinghong

    2007-09-01

    The rational selection and assembly of materials are central issues in the development of energy conversion and storage applications. Incorporating the utilization of carbon nanotubes cathode and TiO2 nanotubes anode in energy storage, a nonaqueous hybrid supercapacitor was developed in order to significantly increase the energy density of the supercapacitor. The electrochemical performance of the hybrid supercapacitor is characterized by charge/discharge test and cyclic voltam-mograms. According to the voltage value, the energy density of the asymmetric supercapacitor, by applying a potential varying from 0 to 2.8 V, is found to be 14.4 Wh/kg at upwards of 10 C, which is twice more than for the conventional symmetric supercapacitor utilizing carbon nanotubes, while maintaining desirable cycling stability and rate capability.

  3. Carbon Nanotube Based Microfluidic Elements for Filtration and Concentration

    SciTech Connect

    Bakajin, O; Ben-Barak, N; Peng, J; Noy, A

    2003-06-25

    We have developed a method for integration of patterned arrays of carbon nanotubes or the ''nanotube mesh'' into microfabricated channels. The method includes standard lithographic methods for patterning and etching the substrate, followed by catalyst patterning, CVD deposition of nanotubes, and anodic bonding of coverslip top. We will describe a carbon nanotube filtering device fabricated using this method and discuss the use of carbon nanotube arrays as molecular concentration and separation media.

  4. Static and dynamic wetting measurements of single carbon nanotubes.

    PubMed

    Barber, Asa H; Cohen, Sidney R; Wagner, H Daniel

    2004-05-07

    Individual carbon nanotubes were immersed and removed from various organic liquids using atomic force microscopy. The carbon nanotube-liquid interactions could be monitored in situ, and accurate measurements of the contact angle between liquids and the nanotube surface were made. These wetting data were used to produce Owens and Wendt plots giving the dispersive and polar components of the nanotube surface.

  5. Optical properties of carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Chen, Gugang

    This thesis addresses the optical properties of novel carbon filamentary nanomaterials: single-walled carbon nanotubes (SWNTs), double-walled carbon nanotubes (DWNTs), and SWNTs with interior C60 molecules ("peapods"). Optical reflectance spectra of bundled SWNTs are discussed in terms of their electronic energy band structure. An Effective Medium Model for a composite material was found to provide a reasonable description of the spectra. Furthermore, we have learned from optical absorption studies of DWNTs and C60-peapods that the host tube and the encapsulant interact weakly; small shifts in interband absorption structure were observed. Resonant Raman scattering studies on SWNTs synthesized via the HiPCO process show that the "zone-folding" approximation for phonons and electrons works reasonably well, even for small diameter (d < 1 nm) tubes. The energy of optical transitions between van Hove singularities in the electronic density of states computed from the "zone-folding" model (with gamma0 = 2.9 eV) agree well with the resonant conditions for Raman scattering. Small diameter tubes were found to exhibit additional sharp Raman bands in the frequency range 500-1200 cm-1 with an, as yet, undetermined origin. The Raman spectrum of a DWNT was found to be well described by a superposition of the Raman spectra expected for inner and outer tubes, i.e., no charge transfer occurs and the weak van der Waals (vdW) interaction between tubes does not have significant impact on the phonons. A ˜7 cm-1 downshift of the small diameter, inner-tube tangential mode frequency was observed, however, but attributed to a tube wall curvature effect, rather than the vdW interaction. Finally, we studied the chemical doping of DWNTs, where the dopant (Br anions) is chemically bound to the outside of the outer tube. The doped DWNT system is a model for a cylindrical molecular capacitor. We found experimentally that 90% of the positive charge resides on the outer tube, so that most of

  6. Polymerization initated at sidewalls of carbon nanotubes

    NASA Technical Reports Server (NTRS)

    Tour, James M. (Inventor); Hudson, Jared L. (Inventor); Krishnamoorti, Ramanan (Inventor); Yurekli, Koray (Inventor); Mitchell, Cynthia A. (Inventor)

    2011-01-01

    The present invention is directed to aryl halide (such as aryl bromide) functionalized carbon nanotubes that can be utilized in anionic polymerization processes to form polymer-carbon nanotube materials with improved dispersion ability in polymer matrices. In this process the aryl halide is reacted with an alkyllithium species or is reacted with a metal to replace the aryl-bromine bond with an aryl-lithium or aryl-metal bond, respectively. It has further been discovered that other functionalized carbon nanotubes, after deprotonation with a deprotonation agent, can similarly be utilized in anionic polymerization processes to form polymer-carbon nanotube materials. Additionally or alternatively, a ring opening polymerization process can be performed. The resultant materials can be used by themselves due to their enhanced strength and reinforcement ability when compared to their unbound polymer analogs. Additionally, these materials can also be blended with pre-formed polymers to establish compatibility and enhanced dispersion of nanotubes in otherwise hard to disperse matrices resulting in significantly improved material properties. The resultant polymer-carbon nanotube materials can also be used in drug delivery processes due to their improved dispersion ability and biodegradability, and can also be used for scaffolding to promote cellular growth of tissue.

  7. Nanoprocessing and nanomeasurements of carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Lin, Xiwei

    A piezoelectric nanomanipulator inside a Transmission Electron Microscope (TEM) specimen holder has been developed, which is capable of manipulating a probe three-dimensionally in translation ranges wider than 40 mum with a positional control precision better than 0.4 nm, and meanwhile allows applying electrical potential across the probe and a sample. The nanomanipulator in TEM permits handling objects of small size with nanometer resolution under real-time TEM inspection, measuring the mechanical and electrical properties of the sample at specified locations, and, at the same time, analyzing the structures of the sample using various TEM techniques. The nanomanipulator in TEM was exploited as an effective tool to measure the electron transport properties of individual carbon nanotubes in contact with a copper probe, and to process multi-walled carbon nanotubes precisely by varieties of approaches, such as nano-welding, nano-cutting, peeling off the outer shells of multi-walled nanotubes. These approaches provide a controllable and reliable method to tailor carbon nanotubes into highly desirable geometry with an ideal number of the shells for many practical applications. The nanomanipulator in TEM was also used to study the field emission of carbon nanotubes by mounting single characterized nanotubes on the probe as the field emitters. It was found that the effective energy barrier for emitting electrons from nanotube tips is lower than the work function of graphite, which is responsible for the good field emission characteristics of carbon nanotubes as well as their high aspect ratio. The strong attractive interaction between carbon nanotube tips and in-situ carbon nanowire growth induced by a high electrical field were first observed using the nanomanipulator in TEM. Electron holography was employed to investigate the nanoscale features of carbon nanotubes and their particulate derivatives. Reconstructed phase images of holograms offer a quantitative means to

  8. Lysozyme binds onto functionalized carbon nanotubes.

    PubMed

    Bomboi, Francesca; Tardani, Franco; Gazzoli, Delia; Bonincontro, Adalberto; La Mesa, Camillo

    2013-08-01

    Single walled carbon nanotubes have singular physicochemical properties making them attractive in a wide range of applications. Studies on carbon nanotubes and biological macromolecules exist in literature. However, ad hoc investigations are helpful to better understand the interaction mechanisms. We report on a system consisting of single walled carbon nanotubes and lysozyme. The phenomenology of nanotube-protein interactions and its effects on protein conformation were determined. We investigated the formation of oxidized nanotube-lysozyme conjugates, by studying the effect of both protein concentration and pH. Electrophoretic mobility, dielectric spectroscopy and dynamic light scattering were used to determine the interaction pathways, monitoring the surface charge density and the size of the complexes. The results allowed identifying the conditions of surface saturation at different pH values. The secondary structure of nanotube-adsorbed protein was controlled by circular dichroism; it was observed that it substantially retains its native conformation. Interestingly, we found that the interactions among oxidized nanotubes and lysozyme molecules are mainly of electrostatic nature and easily tunable by varying the pH of the solutions.

  9. Modeling of carbon nanotubes and carbon nanotube-polymer composites

    NASA Astrophysics Data System (ADS)

    Pal, G.; Kumar, S.

    2016-01-01

    In order to meet stringent environmental, safety and performance requirements from respective regulatory bodies, various technology-based industries are promoting the use of advanced carbon nanotube (CNT) reinforced lightweight and high strength polymer nanocomposites (PNCs) as a substitute to conventional materials both in structural and non-structural applications. The superior mechanical properties of PNCs made up of CNTs or bundles of CNTs can be attributed to the interfacial interaction between the CNTs and matrix, CNT's morphologies and to their uniform dispersion in the matrix. In PNCs, CNTs physically bond with polymeric matrix at a level where the assumption of continuum level interactions is not applicable. Modeling and prediction of mechanical response and failure behavior of CNTs and their composites becomes a complex task and is dealt with the help of up-scale modeling strategies involving multiple spatial and temporal scales in hierarchical or concurrent manner. Firstly, the article offers an insight into various modeling techniques in studying the mechanical response of CNTs; namely, equivalent continuum approach, quasi-continuum approach and molecular dynamics (MD) simulation. In the subsequent steps, these approaches are combined with analytical and numerical micromechanics models in a multiscale framework to predict the average macroscopic response of PNCs. The review also discusses the implementation aspects of these computational approaches, their current status and associated challenges with a future outlook.

  10. Oscillatory characteristics of carbon nanotubes inside carbon nanotube bundles

    NASA Astrophysics Data System (ADS)

    Ansari, R.; Alipour, A.; Sadeghi, F.

    2012-12-01

    This article presents a comprehensive study on the mechanics of carbon nanotubes (CNTs) oscillating in CNT bundles. Using the continuum approximation along with Lennard-Jones (LJ) potential function, new semi-analytical expressions in terms of double integrals are presented to evaluate van der Waals (vdW) potential energy and interaction force upon which the equation of motion is directly solved. The obtained potential expression enables one to arrive at a new semi-analytical formula for the exact evaluation of oscillation frequency. Also, an algebraic frequency formula is extracted on the basis of the simplifying assumption of constant vdW force. Based on the present expressions, a thorough study on various aspects of operating frequencies under different system parameters is given, which permits fresh insight into the problem. The strong dependence of oscillation frequency on system parameters, such as the extrusion distance and initial velocity of the core as initial conditions for the motion is indicated. Interestingly, a specific initial velocity is found at which the oscillation frequency is independent of the core length. In addition, a relation between this specific initial velocity and the escape velocity is disclosed.

  11. Carbon nanotube ecotoxicity in amphibians: assessment of multiwalled carbon nanotubes and comparison with double-walled carbon nanotubes.

    PubMed

    Mouchet, Florence; Landois, Perine; Puech, Pascal; Pinelli, Eric; Flahaut, Emmanuel; Gauthier, Laury

    2010-08-01

    The potential impact of industrial multiwalled carbon nanotubes (MWNTs) was investigated under normalized laboratory conditions according to the International Standard micronucleus assay ISO 21427-1 for 12 days of half-static exposure to 0.1, 1, 10 and 50 mg/l of MWNTs in water. Three different end points were carried out for 12 days of exposure: mortality, growth inhibition and micronuclei induction in erythrocytes of the circulating blood of larvae. Raman spectroscopy analysis was used to study the presence of carbon nanotubes in the biological samples. Considering the high diversity of carbon nanotubes according to their different characteristics, MWNTs were analyzed in Xenopus larvae, comparatively to double-walled carbon nanotubes used in a previous study in similar conditions. Growth inhibition in larvae exposed to 50 mg/l of MWNTs was evidenced; however, no genetoxicity (micronucleus assay) was noticed, at any concentration. Carbon nanotube localization in the larvae leads to different possible hypothesis of mechanisms explaining toxicity in Xenopus.

  12. Carbon Nanotube Suspensions: some underlying issues

    NASA Astrophysics Data System (ADS)

    Windle, Alan

    2006-03-01

    Entropy of mixing of rigid particles in a suspending medium is determined on a per-particle basis and thus, for a given weight fraction will decrease with increasing particle size. In the case of carbon nanotubes, the entropy contribution to mixing will thus be small compared with the interparticle forces which comprise the enthalpic energy contribution to any thermodynamic equilibrium. These forces will generally be short range with the exception of electrostatic forces in the cases that the particles carry a charge. The ability to form carbon nanotube suspensions depends on both the chemical affinity between the medium and the tubes and, it appears, the size of the medium molecules. Surface treatments of the nanotubes have been developed both using covalently attached functional groups and surfactants, and each strategy has been successfully applied to both multi and single wall CNTs. Because carbon nanotubes are long, thin, rigid and comparatively straight, they have been shown to self assemble into liquid crystalline phases showing all the attributes of conventional systems. The relationship between such CNT systems and the conventional ‘Flory’ phase diagram will be described, as will the exploitation of these phase equilibria to fractionate nanotubes on the basis of mesogenicity. The use of liquid crystalline phases as a basis for the processing of carbon nanotubes into aligned assemblies such as fibres will also be outlined.

  13. Carbon Nanotube-Based Synthetic Gecko Tapes

    NASA Astrophysics Data System (ADS)

    Dhinojwala, Ali

    2008-03-01

    Wall-climbing geckos have unique ability to attach to different surfaces without the use of any viscoelastic glues. On coming in contact with any surface, the micron-size gecko foot-hairs deform, enabling molecular contact over large areas, thus translating weak van der Waals (vdW) interactions into enormous shear forces. We will present our recent results on the development of synthetic gecko tape using aligned carbon nanotubes to mimic the keratin hairs found on gecko feet. The patterned carbon nanotube-based gecko tape can support a shear stress (36 N/cm^2) nearly four times higher than the gecko foot and sticks to a variety of surfaces, including Teflon. Both the micron-size setae (replicated by nanotube bundles) and nanometer-size spatulas (individual nanotubes) are necessary to achieve macroscopic shear adhesion and to translate the weak vdW interactions into high shear forces. The carbon nanotube based tape offers an excellent synthetic option as a dry conductive reversible adhesive in microelectronics, robotics and space applications. The mechanism behind these large shear forces and self-cleaning properties of these carbon nanotube based synthetic gecko tapes will be discussed. This work was performed in collaboration with graduate students Liehui Ge, and Sunny Sethi, and collaborators from RPI; Lijie Ci and Professor Pulickel Ajayan.

  14. Fullerenes, carbon nanotubes, and graphene for molecular electronics.

    PubMed

    Pinzón, Julio R; Villalta-Cerdas, Adrián; Echegoyen, Luis

    2012-01-01

    With the constant growing complexity of electronic devices, the top-down approach used with silicon based technology is facing both technological and physical challenges. Carbon based nanomaterials are good candidates to be used in the construction of electronic circuitry using a bottom-up approach, because they have semiconductor properties and dimensions within the required physical limit to establish electrical connections. The unique electronic properties of fullerenes for example, have allowed the construction of molecular rectifiers and transistors that can operate with more than two logical states. Carbon nanotubes have shown their potential to be used in the construction of molecular wires and FET transistors that can operate in the THz frequency range. On the other hand, graphene is not only the most promising material for replacing ITO in the construction of transparent electrodes but it has also shown quantum Hall effect and conductance properties that depend on the edges or chemical doping. The purpose of this review is to present recent developments on the utilization carbon nanomaterials in molecular electronics.

  15. Two novel low-power and high-speed dynamic carbon nanotube full-adder cells

    PubMed Central

    2011-01-01

    In this paper, two novel low-power and high-speed carbon nanotube full-adder cells in dynamic logic style are presented. Carbon nanotube field-effect transistors (CNFETs) are efficient in designing a high performance circuit. To design our full-adder cells, CNFETs with three different threshold voltages (low threshold, normal threshold, and high threshold) are used. First design generates SUM and COUT through separate transistors, and second design is a multi-output dynamic full adder. Proposed full adders are simulated using HSPICE based on CNFET model with 0.9 V supply voltages. Simulation result shows that the proposed designs consume less power and have low power-delay product compared to other CNFET-based full-adder cells. PMID:21888634

  16. Selective Functionalization of Carbon Nanotubes: Part II

    NASA Technical Reports Server (NTRS)

    Meyyappan, Meyya; Khare, Bishun

    2010-01-01

    An alternative method of low-temperature plasma functionalization of carbon nanotubes provides for the simultaneous attachment of molecular groups of multiple (typically two or three) different species or different mixtures of species to carbon nanotubes at different locations within the same apparatus. This method is based on similar principles, and involves the use of mostly the same basic apparatus, as those of the methods described in "Low-Temperature Plasma Functionalization of Carbon Nanotubes" (ARC-14661-1), NASA Tech Briefs, Vol. 28, No. 5 (May 2004), page 45. The figure schematically depicts the basic apparatus used in the aforementioned method, with emphasis on features that distinguish the present alternative method from the other. In this method, one exploits the fact that the composition of the deposition plasma changes as the plasma flows from its source in the precursor chamber toward the nanotubes in the target chamber. As a result, carbon nanotubes mounted in the target chamber at different flow distances (d1, d2, d3 . . .) from the precursor chamber become functionalized with different species or different mixtures of species. In one series of experiments to demonstrate this method, N2 was used as the precursor gas. After the functionalization process, the carbon nanotubes from three different positions in the target chamber were examined by Fourier-transform infrared spectroscopy to identify the molecular groups that had become attached. On carbon nanotubes from d1 = 1 cm, the attached molecular groups were found to be predominantly C-N and C=N. On carbon nanotubes from d2 = 2.5 cm, the attached molecular groups were found to be predominantly C-(NH)2 and/or C=NH2. (The H2 was believed to originate as residual hydrogen present in the nanotubes.) On carbon nanotubes from d3 = 7 cm no functionalization could be detected - perhaps, it was conjectured, because this distance is downstream of the plasma source, all of the free ions and free radicals of

  17. Carbon Nanotube Reinforced Polymers for Radiation Shielding Applications

    NASA Technical Reports Server (NTRS)

    Thibeault, S. (Technical Monitor); Vaidyanathan, Ranji

    2004-01-01

    This viewgraph presentation provides information on the use of Extrusion Freeform Fabrication (EEF) for the fabrication of carbon nanotubes. The presentation addresses TGA analysis, Raman spectroscopy, radiation tests, and mechanical properties of the carbon nanotubes.

  18. A carbon nanotube wall membrane for water treatment.

    PubMed

    Lee, Byeongho; Baek, Youngbin; Lee, Minwoo; Jeong, Dae Hong; Lee, Hong H; Yoon, Jeyong; Kim, Yong Hyup

    2015-05-14

    Various forms of carbon nanotubes have been utilized in water treatment applications. The unique characteristics of carbon nanotubes, however, have not been fully exploited for such applications. Here we exploit the characteristics and corresponding attributes of carbon nanotubes to develop a millimetre-thick ultrafiltration membrane that can provide a water permeability that approaches 30,000 l m(-2) h(-1) bar(-1), compared with the best water permeability of 2,400 l m(-2) h(-1) bar(-1) reported for carbon nanotube membranes. The developed membrane consists only of vertically aligned carbon nanotube walls that provide 6-nm-wide inner pores and 7-nm-wide outer pores that form between the walls of the carbon nanotubes when the carbon nanotube forest is densified. The experimental results reveal that the permeance increases as the pore size decreases. The carbon nanotube walls of the membrane are observed to impede bacterial adhesion and resist biofilm formation.

  19. Release characteristics of selected carbon nanotube polymer composites

    EPA Science Inventory

    Multi-walled carbon nanotubes (MWCNTs) are commonly used in polymer formulations to improve strength, conductivity, and other attributes. A developing concern is the potential for carbon nanotube polymer nanocomposites to release nanoparticles into the environment as the polymer ...

  20. Methods for Gas Sensing with Single-Walled Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Kaul, Anupama B. (Inventor)

    2013-01-01

    Methods for gas sensing with single-walled carbon nanotubes are described. The methods comprise biasing at least one carbon nanotube and exposing to a gas environment to detect variation in temperature as an electrical response.

  1. A carbon nanotube wall membrane for water treatment

    NASA Astrophysics Data System (ADS)

    Lee, Byeongho; Baek, Youngbin; Lee, Minwoo; Jeong, Dae Hong; Lee, Hong H.; Yoon, Jeyong; Kim, Yong Hyup

    2015-05-01

    Various forms of carbon nanotubes have been utilized in water treatment applications. The unique characteristics of carbon nanotubes, however, have not been fully exploited for such applications. Here we exploit the characteristics and corresponding attributes of carbon nanotubes to develop a millimetre-thick ultrafiltration membrane that can provide a water permeability that approaches 30,000 l m-2 h-1 bar-1, compared with the best water permeability of 2,400 l m-2 h-1 bar-1 reported for carbon nanotube membranes. The developed membrane consists only of vertically aligned carbon nanotube walls that provide 6-nm-wide inner pores and 7-nm-wide outer pores that form between the walls of the carbon nanotubes when the carbon nanotube forest is densified. The experimental results reveal that the permeance increases as the pore size decreases. The carbon nanotube walls of the membrane are observed to impede bacterial adhesion and resist biofilm formation.

  2. Carbon Nanotube-Based Permeable Membranes

    SciTech Connect

    Holt, J K; Park, H G; Bakajin, O; Noy, A; Huser, T; Eaglesham, D

    2004-04-06

    A membrane of multiwalled carbon nanotubes embedded in a silicon nitride matrix was fabricated for use in studying fluid mechanics on the nanometer scale. Characterization by fluorescent tracer diffusion and scanning electron microscopy suggests that the membrane is void-free near the silicon substrate on which it rests, implying that the hollow core of the nanotube is the only conduction path for molecular transport. Assuming Knudsen diffusion through this nanotube membrane, a maximum helium transport rate (for a pressure drop of 1 atm) of 0.25 cc/sec is predicted. Helium flow measurements of a nanoporous silicon nitride membrane, fabricated by sacrificial removal of carbon, give a flow rate greater than 1x10{sup -6} cc/sec. For viscous, laminar flow conditions, water is estimated to flow across the nanotube membrane (under a 1 atm pressure drop) at up to 2.8x10{sup -5} cc/sec (1.7 {micro}L/min).

  3. Carbon Nanotube Tower-Based Supercapacitor

    NASA Technical Reports Server (NTRS)

    Meyyappan, Meyya (Inventor)

    2012-01-01

    A supercapacitor system, including (i) first and second, spaced apart planar collectors, (ii) first and second arrays of multi-wall carbon nanotube (MWCNT) towers or single wall carbon nanotube (SWCNT) towers, serving as electrodes, that extend between the first and second collectors where the nanotube towers are grown directly on the collector surfaces without deposition of a catalyst and without deposition of a binder material on the collector surfaces, and (iii) a porous separator module having a transverse area that is substantially the same as the transverse area of at least one electrode, where (iv) at least one nanotube tower is functionalized to permit or encourage the tower to behave as a hydrophilic structure, with increased surface wettability.

  4. Electrical Switching in Metallic Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Choi, Hyoung Joon; Son, Young-Woo; Ihm, Jisoon; Cohen, Marvin L.; Louie, Steven G.

    2006-03-01

    We present first-principles calculations of quantum transport which show that the resistance of metallic carbon nanotubes can be changed dramatically with homogeneous transverse electric fields if the nanotubes have impurities or defects. The change of the resistance is predicted to range over more than two orders of magnitude with experimentally attainable electric fields. This novel property has its origin that backscattering of conduction electrons by impurities or defects in the nanotubes is strongly dependent on the strength and/or direction of the applied electric fields. We expect that this property will open a path to new device applications of metallic carbon nanotubes. Ref.) Young-Woo Son et al., Phys. Rev. Lett. 95, 216602 (2005).

  5. Functionalized carbon nanotubes for potential medicinal applications.

    PubMed

    Zhang, Yi; Bai, Yuhong; Yan, Bing

    2010-06-01

    Functionalized carbon nanotubes display unique properties that enable a variety of medicinal applications, including the diagnosis and treatment of cancer, infectious diseases and central nervous system disorders, and applications in tissue engineering. These potential applications are particularly encouraged by their ability to penetrate biological membranes and relatively low toxicity. High aspect ratio, unique optical property and the likeness as small molecule make carbon nanotubes an unusual allotrope of element carbon. After functionalization, carbon nanotubes display potentials for a variety of medicinal applications, including the diagnosis and treatment of cancer, infectious diseases and central nervous system disorders, and applications in tissue engineering. These potential applications are particularly encouraged by their ability to penetrate biological membranes and relatively low toxicity.

  6. Carbon Nanotubes and Chronic Granulomatous Disease

    PubMed Central

    Barna, Barbara P.; Judson, Marc A.; Thomassen, Mary Jane

    2014-01-01

    Use of nanomaterials in manufactured consumer products is a rapidly expanding industry and potential toxicities are just beginning to be explored. Combustion-generated multiwall carbon nanotubes (MWCNT) or nanoparticles are ubiquitous in non-manufacturing environments and detectable in vapors from diesel fuel, methane, propane, and natural gas. In experimental animal models, carbon nanotubes have been shown to induce granulomas or other inflammatory changes. Evidence suggesting potential involvement of carbon nanomaterials in human granulomatous disease, has been gathered from analyses of dusts generated in the World Trade Center disaster combined with epidemiological data showing a subsequent increase in granulomatous disease of first responders. In this review we will discuss evidence for similarities in the pathophysiology of carbon nanotube-induced pulmonary disease in experimental animals with that of the human granulomatous disease, sarcoidosis. PMID:25525507

  7. Electromechanical properties of single-walled carbon nanotube devices on micromachined cantilevers

    NASA Astrophysics Data System (ADS)

    Jeon, Eun-Kyoung; Park, Chan-Hyun; Lee, Jung A.; Kim, Min-Seok; Lee, Kwang-Cheol; So, Hye-Mi; Ahn, Chiwon; Chang, Hyunju; Kong, Ki-jeong; Kim, Ju-Jin; Lee, Jeong-O.

    2012-11-01

    We have investigated the electromechanical properties of single-walled carbon nanotubes (SWNTs) by constructing carbon nanotube transistors on micro-cantilevers. SWNTs and ultra-long carbon nanotubes (UNTs) were grown on free-standing Si3N4 membranes by using chemical vapor deposition, and electrical contacts were generated with electron beam lithography and lift-off. The cantilevers bearing SWNT devices were micromachined so that hybrid cantilevers with various spring constants were fabricated. To measure the electromechanical properties of the SWNTs, precisely controlled forces were generated by a microbalance and applied to the hybrid cantilever devices. Upon bending, the conductances of the metallic and large-gap semiconducting UNTs showed no notable change, whereas the conductances of the small-gap semiconducting UNTs and networks of SWNTs increased. Numerical simulations of bended SWNT made using a multiscale simulator supported the hypothesis that the small-gap semiconducting SWNTs undergo a metallic transformation upon bending.

  8. Nerve agent detection using networks of single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Novak, J. P.; Snow, E. S.; Houser, E. J.; Park, D.; Stepnowski, J. L.; McGill, R. A.

    2003-11-01

    We report the use of carbon nanotubes as a sensor for chemical nerve agents. Thin-film transistors constructed from random networks of single-walled carbon nanotubes were used to detect dimethyl methylphosphonate (DMMP), a simulant for the nerve agent sarin. These sensors are reversible and capable of detecting DMMP at sub-ppb concentration levels, and they are intrinsically selective against interferent signals from hydrocarbon vapors and humidity. We provide additional chemical specificity by the use of filters coated with chemoselective polymer films. These results indicate that the electronic detection of sub-ppb concentrations of nerve agents and potentially other chemical warfare agents is possible with simple-to-fabricate carbon nanotube devices.

  9. Growth of semiconducting single-wall carbon nanotubes with a narrow band-gap distribution

    PubMed Central

    Zhang, Feng; Hou, Peng-Xiang; Liu, Chang; Wang, Bing-Wei; Jiang, Hua; Chen, Mao-Lin; Sun, Dong-Ming; Li, Jin-Cheng; Cong, Hong-Tao; Kauppinen, Esko I.; Cheng, Hui-Ming

    2016-01-01

    The growth of high-quality semiconducting single-wall carbon nanotubes with a narrow band-gap distribution is crucial for the fabrication of high-performance electronic devices. However, the single-wall carbon nanotubes grown from traditional metal catalysts usually have diversified structures and properties. Here we design and prepare an acorn-like, partially carbon-coated cobalt nanoparticle catalyst with a uniform size and structure by the thermal reduction of a [Co(CN)6]3− precursor adsorbed on a self-assembled block copolymer nanodomain. The inner cobalt nanoparticle functions as active catalytic phase for carbon nanotube growth, whereas the outer carbon layer prevents the aggregation of cobalt nanoparticles and ensures a perpendicular growth mode. The grown single-wall carbon nanotubes have a very narrow diameter distribution centred at 1.7 nm and a high semiconducting content of >95%. These semiconducting single-wall carbon nanotubes have a very small band-gap difference of ∼0.08 eV and show excellent thin-film transistor performance. PMID:27025784

  10. Carbon nanotube filaments in household light bulbs

    NASA Astrophysics Data System (ADS)

    Wei, Jinquan; Zhu, Hongwei; Wu, Dehai; Wei, Bingqing

    2004-06-01

    Household light bulbs made from macroscopic single-walled and double-walled carbon nanotube filaments were fabricated and tested. The nanotube bulbs are found to possess several interesting features when compared to a conventional tungsten filament in safelight (36 V, 40 W), such as lower threshold voltage for light emission and higher brightness at high voltages. Electrically induced excited peaks at 407, 417, 655 nm were identified to be an intrinsic property of nanotubes and these peaks are observed to become stronger in the light emission spectra at high temperatures which cannot be explained easily with the concept of blackbody emission.

  11. Magnetic Susceptibility of Collapsed Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Ando, Tsuneya

    2017-02-01

    The orbital magnetic susceptibility is calculated in collapsed carbon nanotubes within an effective-mass scheme for two magnetic-field configurations, perpendicular and parallel to the flattened plane. The response is diamagnetic in both directions and is much larger for the perpendicular configuration, with some rare exceptions. In chiral nanotubes, calculated results show small and almost negligible effects of collapsing except for some modification due to change in the effective magnetic field. In nonchiral zigzag and armchair nanotubes, the susceptibility is strongly modified, depending on relative displacement of two layers in the flattened region.

  12. High-sensitive label-free biosensors based on single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Maehashi, Kenzo; Matsumoto, Kazuhiko

    2006-02-01

    DNA hybridization has sensitively been detected using carbon nanotube field-effect transistors (CNTFETs) in real time. After full-complementary DNA introduction, the source-drain current gradually increased while monitoring in real time. Full-complementary DNA with concentration as low as 1 fmol/L solution could be effectively detected. Our CNTFET-based biochip is a promising candidate for the development of an integrated, high-throughput, multiplexed DNA biosensor for medical, forensic and environmental diagnostics.

  13. Carbon nanotube polymer composites for photonic devices

    NASA Astrophysics Data System (ADS)

    Scardaci, V.; Rozhin, A. G.; Hennrich, F.; Milne, W. I.; Ferrari, A. C.

    2007-03-01

    We report the fabrication of high optical quality single wall carbon nanotube polyvinyl alcohol composites and their application in nanotube based photonic devices. These show a broad absorption of semiconductor tubes centred at ∼1.55 μm, the spectral range of interest for optical communications. The films are used as mode-lockers in an erbium doped fibre laser, achieving ∼700 fs mode-locked pulses. Raman spectroscopy shows no damage after a long time continuous laser operation.

  14. Does water dope carbon nanotubes?

    SciTech Connect

    Bell, Robert A.; Payne, Michael C.; Mostofi, Arash A.

    2014-10-28

    We calculate the long-range perturbation to the electronic charge density of carbon nanotubes (CNTs) as a result of the physisorption of a water molecule. We find that the dominant effect is a charge redistribution in the CNT due to polarisation caused by the dipole moment of the water molecule. The charge redistribution is found to occur over a length-scale greater than 30 Å, highlighting the need for large-scale simulations. By comparing our fully first-principles calculations to ones in which the perturbation due to a water molecule is treated using a classical electrostatic model, we estimate that the charge transfer between CNT and water is negligible (no more than 10{sup −4} e per water molecule). We therefore conclude that water does not significantly dope CNTs, a conclusion that is consistent with the poor alignment of the relevant energy levels of the water molecule and CNT. Previous calculations that suggest water n-dopes CNTs are likely due to the misinterpretation of Mulliken charge partitioning in small supercells.

  15. Carbon nanotube fiber terahertz polarizer

    NASA Astrophysics Data System (ADS)

    Zubair, Ahmed; Tsentalovich, Dmitri E.; Young, Colin C.; Heimbeck, Martin S.; Everitt, Henry O.; Pasquali, Matteo; Kono, Junichiro

    2016-04-01

    Conventional, commercially available terahertz (THz) polarizers are made of uniformly and precisely spaced metallic wires. They are fragile and expensive, with performance characteristics highly reliant on wire diameters and spacings. Here, we report a simple and highly error-tolerant method for fabricating a freestanding THz polarizer with nearly ideal performance, reliant on the intrinsically one-dimensional character of conduction electrons in well-aligned carbon nanotubes (CNTs). The polarizer was constructed on a mechanical frame over which we manually wound acid-doped CNT fibers with ultrahigh electrical conductivity. We demonstrated that the polarizer has an extinction ratio of ˜-30 dB with a low insertion loss (<0.5 dB) throughout a frequency range of 0.2-1.1 THz. In addition, we used a THz ellipsometer to measure the Müller matrix of the CNT-fiber polarizer and found comparable attenuation to a commercial metallic wire-grid polarizer. Furthermore, based on the classical theory of light transmission through an array of metallic wires, we demonstrated the most striking difference between the CNT-fiber and metallic wire-grid polarizers: the latter fails to work in the zero-spacing limit, where it acts as a simple mirror, while the former continues to work as an excellent polarizer even in that limit due to the one-dimensional conductivity of individual CNTs.

  16. Elastomer Reinforced with Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Hudson, Jared L.; Krishnamoorti, Ramanan

    2009-01-01

    Elastomers are reinforced with functionalized, single-walled carbon nanotubes (SWNTs) giving them high-breaking strain levels and low densities. Cross-linked elastomers are prepared using amine-terminated, poly(dimethylsiloxane) (PDMS), with an average molecular weight of 5,000 daltons, and a functionalized SWNT. Cross-link densities, estimated on the basis of swelling data in toluene (a dispersing solvent) indicated that the polymer underwent cross-linking at the ends of the chains. This thermally initiated cross-linking was found to occur only in the presence of the aryl alcohol functionalized SWNTs. The cross-link could have been via a hydrogen-bonding mechanism between the amine and the free hydroxyl group, or via attack of the amine on the ester linage to form an amide. Tensile properties examined at room temperature indicate a three-fold increase in the tensile modulus of the elastomer, with rupture and failure of the elastomer occurring at a strain of 6.5.

  17. Thermal Transport in Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Christman, Jeremy; Moore, Andrew; Khatun, Mahfuza

    2011-10-01

    Recent advances in nanostructure technology have made it possible to create small devices at the nanoscale. Carbon nanotubes (CNT's) are among the most exciting building blocks of nanotechnology. Their versatility and extremely desirable properties for electronic and other devices have driven intense research and development efforts in recent years. A review of electrical and thermal conduction of the structures will be presented. The theoretical investigation is mainly based on molecular dynamics. Green Kubo relation is used for the study of thermal conductivity. Results include kinetic energy, potential energy, heat flux autocorrelation function, and heat conduction of various CNT structures. Most of the computation and simulation has been conducted on the Beowulf cluster at Ball State University. Various software packages and tools such as Visual Molecular Dynamics (VMD), Large-scale Atomic/Molecular Massively Parallel Simulator (LAMMPS), and NanoHUB, the open online resource at Purdue University have been used for the research. The work has been supported by the Indiana Academy of Science Research Fund, 2010-2011.

  18. Selective synthesis and device applications of semiconducting single-walled carbon nanotubes using isopropyl alcohol as feedstock.

    PubMed

    Che, Yuchi; Wang, Chuan; Liu, Jia; Liu, Bilu; Lin, Xue; Parker, Jason; Beasley, Cara; Wong, H-S Philip; Zhou, Chongwu

    2012-08-28

    The development of guided chemical vapor deposition (CVD) growth of single-walled carbon nanotubes provides a great platform for wafer-scale integration of aligned nanotubes into circuits and functional electronic systems. However, the coexistence of metallic and semiconducting nanotubes is still a major obstacle for the development of carbon-nanotube-based nanoelectronics. To address this problem, we have developed a method to obtain predominantly semiconducting nanotubes from direct CVD growth. By using isopropyl alcohol (IPA) as the carbon feedstock, a semiconducting nanotube purity of above 90% is achieved, which is unambiguously confirmed by both electrical and micro-Raman measurements. Mass spectrometric study was performed to elucidate the underlying chemical mechanism. Furthermore, high performance thin-film transistors with an on/off ratio above 10(4) and mobility up to 116 cm(2)/(V·s) have been achieved using the IPA-synthesized nanotube networks grown on silicon substrate. The method reported in this contribution is easy to operate and the results are highly reproducible. Therefore, such semiconducting predominated single-walled carbon nanotubes could serve as an important building block for future practical and scalable carbon nanotube electronics.

  19. Chemical reactions confined within carbon nanotubes.

    PubMed

    Miners, Scott A; Rance, Graham A; Khlobystov, Andrei N

    2016-08-22

    In this critical review, we survey the wide range of chemical reactions that have been confined within carbon nanotubes, particularly emphasising how the pairwise interactions between the catalysts, reactants, transition states and products of a particular molecular transformation with the host nanotube can be used to control the yields and distributions of products of chemical reactions. We demonstrate that nanoscale confinement within carbon nanotubes enables the control of catalyst activity, morphology and stability, influences the local concentration of reactants and products thus affecting equilibria, rates and selectivity, pre-arranges the reactants for desired reactions and alters the relative stability of isomeric products. We critically evaluate the relative advantages and disadvantages of the confinement of chemical reactions inside carbon nanotubes from a chemical perspective and describe how further developments in the controlled synthesis of carbon nanotubes and the incorporation of multifunctionality are essential for the development of this ever-expanding field, ultimately leading to the effective control of the pathways of chemical reactions through the rational design of multi-functional carbon nanoreactors.

  20. Measurement Challenges for Carbon Nanotube Material

    NASA Technical Reports Server (NTRS)

    Sosa, Edward; Arepalli, Sivaram; Nikolaev, Pasha; Gorelik, Olga; Yowell, Leonard

    2006-01-01

    The advances in large scale applications of carbon nanotubes demand a reliable supply of raw and processed materials. It is imperative to have a consistent quality control of these nanomaterials to distinguish material inconsistency from the modifications induced by processing of nanotubes for any application. NASA Johnson Space Center realized this need five years back and started a program to standardize the characterization methods. The JSC team conducted two workshops (2003 and 2005) in collaboration with NIST focusing on purity and dispersion measurement issues of carbon nanotubes [1]. In 2004, the NASA-JSC protocol was developed by combining analytical techniques of SEM, TEM, UV-VIS-NIR absorption, Raman, and TGA [2]. This protocol is routinely used by several researchers across the world as a first step in characterizing raw and purified carbon nanotubes. A suggested practice guide consisting of detailed chapters on TGA, Raman, electron microscopy and NIR absorption is in the final stages and is undergoing revisions with input from the nanotube community [3]. The possible addition of other techniques such as XPS, and ICP to the existing protocol will be presented. Recent activities at ANSI and ISO towards implementing these protocols as nanotube characterization standards will be discussed.

  1. Bulk Cutting of Carbon Nanotubes Using Electron Beam Irradiation

    NASA Technical Reports Server (NTRS)

    Ziegler, Kirk J. (Inventor); Rauwald, Urs (Inventor); Hauge, Robert H. (Inventor); Schmidt, Howard K. (Inventor); Smalley, Richard E. (Inventor); Kittrell, W. Carter (Inventor); Gu, Zhenning (Inventor)

    2013-01-01

    According to some embodiments, the present invention provides a method for attaining short carbon nanotubes utilizing electron beam irradiation, for example, of a carbon nanotube sample. The sample may be pretreated, for example by oxonation. The pretreatment may introduce defects to the sidewalls of the nanotubes. The method is shown to produces nanotubes with a distribution of lengths, with the majority of lengths shorter than 100 tun. Further, the median length of the nanotubes is between about 20 nm and about 100 nm.

  2. Effects of single-walled carbon nanotubes on lysozyme gelation.

    PubMed

    Tardani, Franco; La Mesa, Camillo

    2014-09-01

    The possibility to disperse carbon nanotubes in biocompatible matrices has got substantial interest from the scientific community. Along this research line, the inclusion of single walled carbon nanotubes in lysozyme-based hydrogels was investigated. Experiments were performed at different nanotube/lysozyme weight ratios. Carbon nanotubes were dispersed in protein solutions, in conditions suitable for thermal gelation. The state of the dispersions was determined before and after thermal treatment. Rheology, dynamic light scattering and different microscopies investigated the effect that carbon nanotubes exert on gelation. The gelation kinetics and changes in gelation temperature were determined. The effect of carbon and lysozyme content on the gel properties was, therefore, determined. At fixed lysozyme content, moderate amounts of carbon nanotubes do not disturb the properties of hydrogel composites. At moderately high volume fractions in carbon nanotubes, the gels become continuous in both lysozyme and nanotubes. This is because percolating networks are presumably formed. Support to the above statements comes by rheology.

  3. Formation of Carbon Nanotubes in a Microgravity Environment

    NASA Technical Reports Server (NTRS)

    Alford, J. M.; Mason, G. R.; Feikema, D. A.

    2001-01-01

    Even though nanotube science has become one of the worlds most rapidly advancing areas of research, very little is known about the processes involved in nanotube synthesis. To study the formation of carbon nanotubes in an environment unhindered by the buoyancy induced flows generated by the high temperatures necessary to vaporize carbon and grow nanotubes, we have designed a miniature carbon arc apparatus that can produce carbon nanotubes under microgravity conditions. During the first phase of this project, we designed, built, and successfully tested the mini carbon arc in both 1g and 2.2 sec drop tower microgravity conditions. We have demonstrated that microgravity can eliminate the strong convective flows from the carbon arc and we have successfully produced single-walled carbon nanotubes in microgravity. We believe that microgravity processing will allow us to better understand the nanotube formation process and eventually allow us to grow nanotubes that are superior to ground-based production.

  4. Mechanics of Carbon Nanotubes and their Polymer Composites

    NASA Technical Reports Server (NTRS)

    Wei, Chenyu; Cho, K. J.; Srivastava, Deepak; Tang, Harry (Technical Monitor)

    2002-01-01

    Contents include the folloving: carbon nanotube (CNT): structures, application of carbon nanotubes, simulation method, Elastic properties of carbon nanotubes, yield strain of CNT, yielding under tensile stress, yielding: strain-rate and temperature dependence, yield strain under tension, yielding at realistic conditions, nano fibers, polymer CNT composite, force field, density dependency on temperature, diffusion coefficients, young modulus, and conclusions.

  5. Carbon Nanotube/Graphene Supercapacitors Containing Manganese Oxide Nanoparticles

    DTIC Science & Technology

    2012-12-01

    Carbon Nanotube/Graphene Supercapacitors Containing Manganese Oxide Nanoparticles by Matthew Ervin, Vinay Raju, Mary Hendrickson, and...Laboratory Adelphi, MD 20783-1197 ARL-TR-6289 December 2012 Carbon Nanotube/Graphene Supercapacitors Containing Manganese Oxide...From - To) October 2011 to September 2012 4. TITLE AND SUBTITLE Carbon Nanotube/Graphene Supercapacitors Containing Manganese Oxide Nanoparticles

  6. Interaction of pristine and functionalized carbon nanotubes with lipid membranes.

    PubMed

    Baoukina, Svetlana; Monticelli, Luca; Tieleman, D Peter

    2013-10-10

    Carbon nanotubes are widely used in a growing number of applications. Their interactions with biological materials, cell membranes in particular, is of interest in applications including drug delivery and for understanding the toxicity of carbon nanotubes. We use extensive molecular dynamics simulations with the MARTINI model to study the interactions of model nanotubes of different thickness, length, and patterns of chemical modification with model membranes. In addition, we characterize the interactions of small bundles of carbon nanotubes with membrane models. Short pristine carbon nanotubes readily insert into membranes and adopt an orientation parallel to the plane of the membrane in the center of the membrane. Larger aggregates and functionalized nanotubes exhibit a range of possible interactions. The distribution and orientation of carbon nanotubes can be controlled by functionalizing the nanotubes. Free energy calculations provide thermodynamic insight into the preferred orientations of different nanotubes and quantify structural defects in the lipid matrix.

  7. Graphene-carbon nanotube hybrid materials and use as electrodes

    DOEpatents

    Tour, James M.; Zhu, Yu; Li, Lei; Yan, Zheng; Lin, Jian

    2016-09-27

    Provided are methods of making graphene-carbon nanotube hybrid materials. Such methods generally include: (1) associating a graphene film with a substrate; (2) applying a catalyst and a carbon source to the graphene film; and (3) growing carbon nanotubes on the graphene film. The grown carbon nanotubes become covalently linked to the graphene film through carbon-carbon bonds that are located at one or more junctions between the carbon nanotubes and the graphene film. In addition, the grown carbon nanotubes are in ohmic contact with the graphene film through the carbon-carbon bonds at the one or more junctions. The one or more junctions may include seven-membered carbon rings. Also provided are the formed graphene-carbon nanotube hybrid materials.

  8. Carbon Nanotube Computer: Transforming Scientific Discoveries into Working Systems

    NASA Astrophysics Data System (ADS)

    Mitra, Subhasish

    2014-03-01

    The miniaturization of electronic devices has been the principal driving force behind the semiconductor industry, and has brought about major improvements in computational power and energy efficiency. Although advances with silicon-based electronics continue to be made, alternative technologies are being explored. Digital circuits based on transistors fabricated from carbon nanotubes (CNTs) have the potential to outperform silicon by improving the energy- delay product, a metric of energy efficiency, by more than an order of magnitude. Hence, CNTs are an exciting complement to existing semiconductor technologies. However, carbon nanotubes (CNTs) are subject to substantial inherent imperfections that pose major obstacles to the design of robust and very large-scale CNFET digital systems: (i) It is nearly impossible to guarantee perfect alignment and positioning of all CNTs. This limitation introduces stray conducting paths, resulting in incorrect circuit functionality. (ii) CNTs can be metallic or semiconducting depending on chirality. Metallic CNTs cause shorts resulting in excessive leakage and incorrect circuit functionality. A combination of design and processing technique overcomes these challenges by creating robust CNFET digital circuits that are immune to these inherent imperfections. This imperfection-immune design paradigm enables the first experimental demonstration of the carbon nanotube computer, and, more generally, arbitrary digital systems that can be built using CNFETs. The CNT computer is capable of performing multitasking: as a demonstration, we perform counting and integer-sorting simultaneously. In addition, we emulate 20 different instructions from the commercial MIPS instruction set to demonstrate the generality of our CNT computer. This is the most complex carbon-based electronic system yet demonstrated. It is a considerable advance because CNTs are prominent among a variety of emerging technologies that are being considered for the next

  9. Carbon nanotube high-performance logic technology - challenges and current progress

    NASA Astrophysics Data System (ADS)

    Han, Shu-Jen

    2015-03-01

    In the last four decades, we have witnessed a tremendous information technology revolution originated from the relentless scaling of Si complementary metal-oxide semiconductor (CMOS) devices. CMOS scaling provides ever-improved transistor performance, density, power and cost, and will continue to bring new applications and functions to our daily life. However, the conventional homogeneous scaling of silicon devices has become very difficult, firstly due to the unsatisfactory electrostatic control from the gate dielectric. In addition, as we look forward to the technology nodes with sub-10 nm channel length, non-Si based channel materials will be required to provide continuous carrier velocity enhancement when the conventional strained-Si techniques run out of steam. Single-walled carbon nanotubes are promising to replace silicon as the channel material for high-performance electronics near the end of silicon scaling roadmap, with their superb electrical properties, intrinsic ultrathin body, and nearly transparent contact with certain metals. This talk discusses recent advances in modeling and experimental works that reveal the properties and potential of ultra-scaled nanotube transistors, separation and assembly techniques for forming nanotube arrays with high semiconducting nanotube purity and tight pitch separation, and engineering aspects of their implementation in integrated circuits and functional systems. A concluding discussion highlights most significant challenges from technology points of view, and provides perspectives on the future of carbon nanotube based nanoelectronics.

  10. Single Nanotube Spectral Imaging To Determine Molar Concentrations of Isolated Carbon Nanotube Species.

    PubMed

    Galassi, Thomas V; Jena, Prakrit V; Roxbury, Daniel; Heller, Daniel A

    2017-01-17

    Electronic and biological applications of carbon nanotubes can be highly dependent on the species (chirality) of nanotube, purity, and concentration. Existing bulk methods, such as absorbance spectroscopy, can quantify sp(2) carbon based on spectral bands, but nanotube length distribution, defects, and carbonaceous impurities can complicate quantification of individual particles. We present a general method to relate the optical density of a photoluminescent nanotube sample to the number of individual nanotubes. By acquiring 3-dimensional images of nanotubes embedded in a gel matrix with a reducing environment, we quantified all emissive nanotubes in a volume. Via spectral imaging, we assessed structural impurities and precisely determined molar concentrations of the (8,6) and (9,4) nanotube species. We developed an approach to obtain the molarity of any structurally enriched semiconducting single-walled carbon nanotube preparation on a per-nanotube basis.

  11. Carbon nanotubes in neuroregeneration and repair.

    PubMed

    Fabbro, Alessandra; Prato, Maurizio; Ballerini, Laura

    2013-12-01

    In the last decade, we have experienced an increasing interest and an improved understanding of the application of nanotechnology to the nervous system. The aim of such studies is that of developing future strategies for tissue repair to promote functional recovery after brain damage. In this framework, carbon nanotube based technologies are emerging as particularly innovative tools due to the outstanding physical properties of these nanomaterials together with their recently documented ability to interface neuronal circuits, synapses and membranes. This review will discuss the state of the art in carbon nanotube technology applied to the development of devices able to drive nerve tissue repair; we will highlight the most exciting findings addressing the impact of carbon nanotubes in nerve tissue engineering, focusing in particular on neuronal differentiation, growth and network reconstruction.

  12. Carbon Nanotube Bolometer for Absolute FTIR Spectroscopy

    NASA Astrophysics Data System (ADS)

    Woods, Solomon; Neira, Jorge; Tomlin, Nathan; Lehman, John

    We have developed and calibrated planar electrical-substitution bolometers which employ absorbers made from vertically-aligned carbon nanotube arrays. The nearly complete absorption of light by the carbon nanotubes from the visible range to the far-infrared can be exploited to enable a device with read-out in native units equivalent to optical power. Operated at cryogenic temperatures near 4 K, these infrared detectors are designed to have time constant near 10 ms and a noise floor of about 10 pW. Built upon a micro-machined silicon platform, each device has an integrated heater and thermometer, either a carbon nanotube thermistor or superconducting transition edge sensor, for temperature control. We are optimizing temperature-controlled measurement techniques to enable high resolution spectral calibrations using these devices with a Fourier-transform spectrometer.

  13. A review on protein functionalized carbon nanotubes.

    PubMed

    Nagaraju, Kathyayini; Reddy, Roopa; Reddy, Narendra

    2015-12-18

    Carbon nanotubes (CNTs) have been widely recognized and used for controlled drug delivery and in various other fields due to their unique properties and distinct advantages. Both single-walled carbon nanotubes (SWCNTs) and multiwalled (MWCNTs) carbon nanotubes are used and/or studied for potential applications in medical, energy, textile, composite, and other areas. Since CNTs are chemically inert and are insoluble in water or other organic solvents, they are functionalized or modified to carry payloads or interact with biological molecules. CNTs have been preferably functionalized with proteins because CNTs are predominantly used for medical applications such as delivery of drugs, DNA and genes, and also for biosensing. Extensive studies have been conducted to understand the interactions, cytotoxicity, and potential applications of protein functionalized CNTs but contradicting results have been published on the cytotoxicity of the functionalized CNTs. This paper provides a brief review of CNTs functionalized with proteins, methods used to functionalize the CNTs, and their potential applications.

  14. Boron-Filled Hybrid Carbon Nanotubes.

    PubMed

    Patel, Rajen B; Chou, Tsengming; Kanwal, Alokik; Apigo, David J; Lefebvre, Joseph; Owens, Frank; Iqbal, Zafar

    2016-07-27

    A unique nanoheterostructure, a boron-filled hybrid carbon nanotube (BHCNT), has been synthesized using a one-step chemical vapor deposition process. The BHCNTs can be considered to be a novel form of boron carbide consisting of boron doped, distorted multiwalled carbon nanotubes (MWCNTs) encapsulating boron nanowires. These MWCNTs were found to be insulating in spite of their graphitic layered outer structures. While conventional MWCNTs have great axial strength, they have weak radial compressive strength, and do not bond well to one another or to other materials. In contrast, BHCNTs are shown to be up to 31% stiffer and 233% stronger than conventional MWCNTs in radial compression and have excellent mechanical properties at elevated temperatures. The corrugated surface of BHCNTs enables them to bond easily to themselves and other materials, in contrast to carbon nanotubes (CNTs). BHCNTs can, therefore, be used to make nanocomposites, nanopaper sheets, and bundles that are stronger than those made with CNTs.

  15. Boron-Filled Hybrid Carbon Nanotubes

    PubMed Central

    Patel, Rajen B.; Chou, Tsengming; Kanwal, Alokik; Apigo, David J.; Lefebvre, Joseph; Owens, Frank; Iqbal, Zafar

    2016-01-01

    A unique nanoheterostructure, a boron-filled hybrid carbon nanotube (BHCNT), has been synthesized using a one-step chemical vapor deposition process. The BHCNTs can be considered to be a novel form of boron carbide consisting of boron doped, distorted multiwalled carbon nanotubes (MWCNTs) encapsulating boron nanowires. These MWCNTs were found to be insulating in spite of their graphitic layered outer structures. While conventional MWCNTs have great axial strength, they have weak radial compressive strength, and do not bond well to one another or to other materials. In contrast, BHCNTs are shown to be up to 31% stiffer and 233% stronger than conventional MWCNTs in radial compression and have excellent mechanical properties at elevated temperatures. The corrugated surface of BHCNTs enables them to bond easily to themselves and other materials, in contrast to carbon nanotubes (CNTs). BHCNTs can, therefore, be used to make nanocomposites, nanopaper sheets, and bundles that are stronger than those made with CNTs. PMID:27460526

  16. Piezoresistive effect in carbon nanotube fibers.

    PubMed

    Lekawa-Raus, Agnieszka; Koziol, Krzysztof K K; Windle, Alan H

    2014-11-25

    The complex structure of the macroscopic assemblies of carbon nanotubes and variable intrinsic piezoresistivity of nanotubes themselves lead to highly interesting piezoresistive performance of this new type of conductive material. Here, we present an in-depth study of the piezoresistive effect in carbon nanotube fibers, i.e., yarnlike assemblies made purely of aligned carbon nanotubes, which are expected to find applications as electrical and electronic materials. The resistivity changes of carbon nanotube fibers were measured on initial loading, through the elastic/plastic transition, on cyclic loading and on stress relaxation. The various regimes of stress/strain behavior were modeled using a standard linear solid model, which was modified with an additional element in series to account for the observed creep behavior. On the basis of the experimental and modeling results, the origin of piezoresistivity is discussed. An additional effect on the resistivity was found as the fiber was held under load which led to observations of the effect of humidity and the associated water adsorption level on the resistivity. We show that the equilibrium uptake of moisture leads to the decrease in gauge factor of the fiber decrease, i.e., the reduction in the sensitivity of fiber resistivity to loading.

  17. Carbon Nanotubes Synthesis Through Gamma Radiation

    NASA Astrophysics Data System (ADS)

    Tirado, Pablo; Garcia, Rafael; Montes, Jorge; Melendrez, Rodrigo; Barboza, Marcelino; Contreras, Oscar

    2015-03-01

    Carbon nanotubes show a great potential of applications since there discovery by Iijima in 1991[1] due to their numerous physical-chemical properties such as their high weight to strength relationship, which make them ideal to use in high resistance compound materials, and in many other applications[2] In this work, a novel method for the synthesis of carbon nanotubes is presented, starting from an ultra-thin sheet of graphite synthesized by the chemical vapor decomposition technique (CVD), using ultra high purity methane and hydrogen at 1200°C in a horizontal quartz reactor. For the synthesis of carbon nanotubes, the graphite sheets were exposed to different doses of radiation, with the objective of breaking the graphite bonds and form carbon nanotubes; a Gammacell equipment model 220 Excel was used for the purpose, which counts with a radiation source of cobalt 60, and a current radiation rate of 0.9 Gy/seconds. The time of exposure to radiation was varied in each sample, according to the desired dose of radiation in each case, afterwards the samples were characterized using the Raman spectroscopy and TEM microscopy techniques with the objective of observing the kind of nanotubes formed, their morphology and their number of defects. Results will be shown during the poster session.

  18. High Performance Organic Transistors: Percolating Arrays of Nanotubes Functionalized with an Electron Deficient Olefin

    DTIC Science & Technology

    2011-04-03

    electronics. In the present work, we have extended carbon nanotube functionalization via a 2-2 cycloaddition to electron withdrawing non-fluorinated...have extended carbon nanotube functionalization via a 2-2 cycloaddition to electron withdrawing non-fluorinated olefins as well. Our results show...Moyon et Al. 27 work on cycloaddition of azomenthine suggests preferential functionalization of the semiconducting tubes. In contrast, Kamaras et al

  19. Transport Through Carbon Nanotube Wires

    NASA Technical Reports Server (NTRS)

    Anantram, M. P.; Yan, Jerry (Technical Monitor)

    2000-01-01

    This viewgraph presentation gives an overview of the the current carrying capacity of nanotube wires. Information is given on the motivation for the research, models and assumptions, Bragg reflection and Zener tunneling effects, and the influence of defects. Results show that dI/dv versus V does not increase in a manner commensurate with the increase in the number of subbands; in small diameter nanotubes, Zener tunneling is ineffective; Zener tunneling contributes to current with increase in nanotube diameter; and the increase in dI/dV with bias is much smaller than the increase in the number of subbands.

  20. Stable doping of carbon nanotubes via molecular self assembly

    SciTech Connect

    Lee, B.; Chen, Y.; Podzorov, V.; Cook, A.; Zakhidov, A.

    2014-10-14

    We report a novel method for stable doping of carbon nanotubes (CNT) based on methods of molecular self assembly. A conformal growth of a self-assembled monolayer of fluoroalkyl trichloro-silane (FTS) at CNT surfaces results in a strong increase of the sheet conductivity of CNT electrodes by 60–300%, depending on the CNT chirality and composition. The charge carrier mobility of undoped partially aligned CNT films was independently estimated in a field-effect transistor geometry (~100 cm²V⁻¹s⁻¹). The hole density induced by the FTS monolayer in CNT sheets is estimated to be ~1.8 ×10¹⁴cm⁻². We also show that FTS doping of CNT anodes greatly improves the performance of organic solar cells. This large and stable doping effect, easily achieved in large-area samples, makes this approach very attractive for applications of CNTs in transparent and flexible electronics.

  1. Morphological and electrical characteristics of biofunctionalized layers on carbon nanotubes.

    PubMed

    Villamizar, Raquel A; Braun, Julia; Gompf, Bruno; Dressel, Martin; Rius, F Xavier

    2009-09-15

    In this study we have investigated the morphology and electrical characteristics of protein layers non-covalently adsorbed onto an irregular network of carbon nanotubes (CNT). The layer system presents a prototype for an ion-sensitive field-effect transistor based on CNT-networks. The complementary characterization techniques AFM and ellipsometry give the overall morphology of the functionalized layer system and in combination with concentration dependent measurements a detailed image of the adsorption dynamics. The advantage of CNT-based FETs is their huge surface area, which makes them extremely sensitive even to weak adsorption processes. The here-presented comparative investigations clearly show that significant changes in the transport properties of the CNTs occur much below one monolayer. This sensitivity is an important condition for the future development of efficient biodevices with optimal performance parameters for the detection of pathogenic microorganisms.

  2. A molybdenum disulfide/carbon nanotube heterogeneous complementary inverter.

    PubMed

    Huang, Jun; Somu, Sivasubramanian; Busnaina, Ahmed

    2012-08-24

    We report a simple, bottom-up/top-down approach for integrating drastically different nanoscale building blocks to form a heterogeneous complementary inverter circuit based on layered molybdenum disulfide and carbon nanotube (CNT) bundles. The fabricated CNT/MoS(2) inverter is composed of n-type molybdenum disulfide (MOS(2)) and p-type CNT transistors, with a high voltage gain of 1.3. The CNT channels are fabricated using directed assembly while the layered molybdenum disulfide channels are fabricated by mechanical exfoliation. This bottom-up fabrication approach for integrating various nanoscale elements with unique characteristics provides an alternative cost-effective methodology to complementary metal-oxide-semiconductors, laying the foundation for the realization of high performance logic circuits.

  3. Electrically induced ambipolar spin vanishments in carbon nanotubes

    PubMed Central

    Matsumoto, D.; Yanagi, K.; Takenobu, T.; Okada, S.; Marumoto, K.

    2015-01-01

    Carbon nanotubes (CNTs) exhibit various excellent properties, such as ballistic transport. However, their electrically induced charge carriers and the relation between their spin states and the ballistic transport have not yet been microscopically investigated because of experimental difficulties. Here we show an electron spin resonance (ESR) study of semiconducting single-walled CNT thin films to investigate their spin states and electrically induced charge carriers using transistor structures under device operation. The field-induced ESR technique is suitable for microscopic investigation because it can directly observe spins in the CNTs. We observed a clear correlation between the ESR decrease and the current increase under high charge density conditions, which directly demonstrated electrically induced ambipolar spin vanishments in the CNTs. The result provides a first clear evidence of antimagnetic interactions between spins of electrically induced charge carriers and vacancies in the CNTs. The ambipolar spin vanishments would contribute the improvement of transport properties of CNTs because of greatly reduced carrier scatterings. PMID:26148487

  4. Upgrading non-oxidized carbon nanotubes by thermally decomposed hydrazine

    NASA Astrophysics Data System (ADS)

    Wang, Pen-Cheng; Liao, Yu-Chun; Liu, Li-Hung; Lai, Yu-Ling; Lin, Ying-Chang; Hsu, Yao-Jane

    2014-06-01

    We found that the electrical properties of conductive thin films based on non-oxidized carbon nanotubes (CNTs) could be further improved when the CNTs consecutively underwent a mild hydrazine adsorption treatment and then a sufficiently effective thermal desorption treatment. We also found that, after several rounds of vapor-phase hydrazine treatments and baking treatments were applied to an inferior single-CNT field-effect transistor device, the device showed improvement in Ion/Ioff ratio and reduction in the extent of gate-sweeping hysteresis. Our experimental results indicate that, even though hydrazine is a well-known reducing agent, the characteristics of our hydrazine-exposed CNT samples subject to certain treatment conditions could become more graphenic than graphanic, suggesting that the improvement in the electrical and electronic properties of CNT samples could be related to the transient bonding and chemical scavenging of thermally decomposed hydrazine on the surface of CNTs.

  5. Subnanowatt carbon nanotube complementary logic enabled by threshold voltage control.

    PubMed

    Geier, Michael L; Prabhumirashi, Pradyumna L; McMorrow, Julian J; Xu, Weichao; Seo, Jung-Woo T; Everaerts, Ken; Kim, Chris H; Marks, Tobin J; Hersam, Mark C

    2013-10-09

    In this Letter, we demonstrate thin-film single-walled carbon nanotube (SWCNT) complementary metal-oxide-semiconductor (CMOS) logic devices with subnanowatt static power consumption and full rail-to-rail voltage transfer characteristics as is required for logic gate cascading. These results are enabled by a local metal gate structure that achieves enhancement-mode p-type and n-type SWCNT thin-film transistors (TFTs) with widely separated and symmetric threshold voltages. These complementary SWCNT TFTs are integrated to demonstrate CMOS inverter, NAND, and NOR logic gates at supply voltages as low as 0.8 V with ideal rail-to-rail operation, subnanowatt static power consumption, high gain, and excellent noise immunity. This work provides a direct pathway for solution processable, large area, power efficient SWCNT advanced logic circuits and systems.

  6. Carbon Nanostructure-Based Field-Effect Transistors for Label-Free Chemical/Biological Sensors

    PubMed Central

    Hu, PingAn; Zhang, Jia; Li, Le; Wang, Zhenlong; O’Neill, William; Estrela, Pedro

    2010-01-01

    Over the past decade, electrical detection of chemical and biological species using novel nanostructure-based devices has attracted significant attention for chemical, genomics, biomedical diagnostics, and drug discovery applications. The use of nanostructured devices in chemical/biological sensors in place of conventional sensing technologies has advantages of high sensitivity, low decreased energy consumption and potentially highly miniaturized integration. Owing to their particular structure, excellent electrical properties and high chemical stability, carbon nanotube and graphene based electrical devices have been widely developed for high performance label-free chemical/biological sensors. Here, we review the latest developments of carbon nanostructure-based transistor sensors in ultrasensitive detection of chemical/biological entities, such as poisonous gases, nucleic acids, proteins and cells. PMID:22399927

  7. Carbon Nanotube Spaceframes for Low-Density Aerospace Materials

    DTIC Science & Technology

    2012-01-26

    Functionalization Methods Chemically sculpting carbon nanotubes into nano-objects of the type needed for synthesizing CNT spaceframe materials require two...distinct functionalization chemistries that produce distinct functional structures at the ends of the nanotubes and on the sidewalls of the nanotubes ...which are applied to the nanotubes . In this project, oxidative etching techniques were explored for end selective functionalization . Selective

  8. Carbon Nanotube-Enhanced Carbon-Phenenolic Ablator Material

    NASA Technical Reports Server (NTRS)

    Kikolaev, P.; Stackpoole, M.; Fan, W.; Cruden, B. A.; Waid, M.; Moloney, P.; Arepalli, S.; Arnold, J.; Partridge, H.; Yowell, L.

    2006-01-01

    This viewgraph presentation reviews the use of PICA (phenolic impregnated carbon ablator) as the selected material for heat shielding for future earth return vehicles. It briefly reviews the manufacturing of PICA and the advantages for the use of heat shielding, and then explains the reason for using Carbon Nanotubes to improve strength of phenolic resin that binds carbon fibers together. It reviews the work being done to create a carbon nanotube enhanced PICA. Also shown are various micrographic images of the various PICA materials.

  9. A carbon nanotube optical rectenna.

    PubMed

    Sharma, Asha; Singh, Virendra; Bougher, Thomas L; Cola, Baratunde A

    2015-12-01

    An optical rectenna--a device that directly converts free-propagating electromagnetic waves at optical frequencies to direct current--was first proposed over 40 years ago, yet this concept has not been demonstrated experimentally due to fabrication challenges at the nanoscale. Realizing an optical rectenna requires that an antenna be coupled to a diode that operates on the order of 1 PHz (switching speed on the order of 1 fs). Diodes operating at these frequencies are feasible if their capacitance is on the order of a few attofarads, but they remain extremely difficult to fabricate and to reliably couple to a nanoscale antenna. Here we demonstrate an optical rectenna by engineering metal-insulator-metal tunnel diodes, with a junction capacitance of ∼2 aF, at the tip of vertically aligned multiwalled carbon nanotubes (∼10 nm in diameter), which act as the antenna. Upon irradiation with visible and infrared light, we measure a d.c. open-circuit voltage and a short-circuit current that appear to be due to a rectification process (we account for a very small but quantifiable contribution from thermal effects). In contrast to recent reports of photodetection based on hot electron decay in a plasmonic nanoscale antenna, a coherent optical antenna field appears to be rectified directly in our devices, consistent with rectenna theory. Finally, power rectification is observed under simulated solar illumination, and there is no detectable change in diode performance after numerous current-voltage scans between 5 and 77 °C, indicating a potential for robust operation.

  10. A carbon nanotube optical rectenna

    NASA Astrophysics Data System (ADS)

    Sharma, Asha; Singh, Virendra; Bougher, Thomas L.; Cola, Baratunde A.

    2015-12-01

    An optical rectenna—a device that directly converts free-propagating electromagnetic waves at optical frequencies to direct current—was first proposed over 40 years ago, yet this concept has not been demonstrated experimentally due to fabrication challenges at the nanoscale. Realizing an optical rectenna requires that an antenna be coupled to a diode that operates on the order of 1 PHz (switching speed on the order of 1 fs). Diodes operating at these frequencies are feasible if their capacitance is on the order of a few attofarads, but they remain extremely difficult to fabricate and to reliably couple to a nanoscale antenna. Here we demonstrate an optical rectenna by engineering metal-insulator-metal tunnel diodes, with a junction capacitance of ˜2 aF, at the tip of vertically aligned multiwalled carbon nanotubes (˜10 nm in diameter), which act as the antenna. Upon irradiation with visible and infrared light, we measure a d.c. open-circuit voltage and a short-circuit current that appear to be due to a rectification process (we account for a very small but quantifiable contribution from thermal effects). In contrast to recent reports of photodetection based on hot electron decay in a plasmonic nanoscale antenna, a coherent optical antenna field appears to be rectified directly in our devices, consistent with rectenna theory. Finally, power rectification is observed under simulated solar illumination, and there is no detectable change in diode performance after numerous current-voltage scans between 5 and 77 °C, indicating a potential for robust operation.

  11. Laser ablative synthesis of carbon nanotubes

    DOEpatents

    Smith, Michael W.; Jordan, Kevin; Park, Cheol

    2010-03-02

    An improved method for the production of single walled carbon nanotubes that utilizes an RF-induction heated side-pumped synthesis chamber for the production of such. Such a method, while capable of producing large volumes of carbon nanotubes, concurrently permits the use of a simplified apparatus that allows for greatly reduced heat up and cool down times and flexible flowpaths that can be readily modified for production efficiency optimization. The method of the present invention utilizes a free electron laser operating at high average and peak fluence to illuminate a rotating and translating graphite/catalyst target to obtain high yields of SWNTs without the use of a vacuum chamber.

  12. Electroluminescence et radiation thermique dans les nanotubes de carbone

    NASA Astrophysics Data System (ADS)

    Adam, Elyse

    be ruled out as the main mechanism of emission in this case. We also studied network field effect transistor with shorter channel length in order to extract the light emission spectra. As expected, all spectra exhibit a broad peak (linewidth ˜ 200 meV) with a maxima that correspond to the first excitonic level in semiconducting nanotube, the so-called ES11 . These results support bipolar (electron-hole) current recombination as the main mechanism of emission and allowed to rule out the impact excitation mechanism of electroluminescence. We also observed that the spectrum of the emission is red-shifted with respect to the corresponding absorption spectrum. This spectral feature reveals that large diameter carbon nanotubes contribute the most to the electroluminescence spectra. Two different effects are proposed to explain why the emission is dominated by the large diameter nanotubes: (i) the carrier density distribution is higher on large diameter nanotubes and (ii) an effective energy transfer process takes place from small to large diameter nanotubes. We finally measured light emission spectra from individual carbon nanotube transistors in air and under vacuum. In air, each spectrum is characterized by a peak that is narrower (˜ 80-150 meV) than those measured in network FETs (˜ 200 meV), suggesting that many carbon nanotubes do emit light simultaneously in the network. Moreover, the peak position of individual nanotube FETs changes from device to device, as expected for electroluminescence from individual carbon nanotubes having different diameters. This set of results suggests that the main mechanism of light emission from individual nanotube FETs in air is dominated by electroluminescence. In vacuum, although low current spectra have a peaked-shape similar to the one measured in air, spectra taken at high current present a totally different shape. The general shape is a blackbody tail that is similar to the spectra measured for suspended film. This result

  13. Modeling of Current-Voltage Characteristics in Large Metal-Semiconducting Carbon Nanotube Systems

    NASA Technical Reports Server (NTRS)

    Yamada, Toshishige; Biegel, Bryon A. (Technical Monitor)

    2000-01-01

    A model is proposed for two observed current-voltage (I-V) patterns in recent experiment with a scanning tunneling microscope tip and a carbon nanotube [Collins et al., Science 278, 100 (1997)]. We claim that there are two contact modes for a tip (metal)-nanotube (semiconductor) junction depending whether the alignment of the metal and the semiconductor band structures is (1) variable (vacuum-gap) or (2) fixed (touching) with V. With the tip grounded, the tunneling case in (1) would produce large dI/dV with V > 0, small dI/dV with V < 0, and I = 0 near V = 0 for an either n- or p-nanotube. However, the Schottky mechanism in (2) would result in forward current with V < 0 for an n-nanotube, while with V > 0 for an p-nanotube. The two observed I-V patterns are thus entirely explained by a tip-nanotube contact of the two types, where the nanotube must be n-type. We apply this model to the source-drain I-V characteristics in a long nanotube-channel field-effect-transistor with metallic electrodes at low temperature [Zhou et al., Appl. Phys. Lett. 76, 1597 (2000)], and show that two independent metal-semiconductor junctions in series are responsible for the observed behavior.

  14. The Use of Plasma Vortexes in Creating Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Leith, Alexander; Alexander Leith Collaboration

    2016-03-01

    Carbon nanotubes have been created in a variety of ways such as arc discharge, laser ablation, and chemical vapor deposition (CVD). Each of these techniques has been proven to produce carbon nanotubes in small quantities in a lab setting. This is the problem that we have been addressing. Over the course of 16 months, we have been working on a new method of carbon nanotube production that is based around fluid dynamics and plasma. We have created the basic components to test this new way to produce carbon nanotubes. This research will ideally provide a new avenue for carbon nanotube production. Worked with Dr. Randal Tagg of the University of Colorado Denver.

  15. Multipurpose organically modified carbon nanotubes: from functionalization to nanotube composites.

    PubMed

    Georgakilas, Vasilios; Bourlinos, Athanasios; Gournis, Dimitrios; Tsoufis, Theodoros; Trapalis, Christos; Mateo-Alonso, Aurelio; Prato, Maurizio

    2008-07-09

    We show that covalent functionalization of carbon nanotubes (CNTs) via 1,3-dipolar cycloaddition is a powerful method for enhancing the ability to process CNTs and facilitating the preparation of hybrid composites, which is achieved solely by mixing. CNTs were functionalized with phenol groups, providing stable dispersions in a range of polar solvents, including water. Additionally, the functionalized CNTs could easily be combined with polymers and layered aluminosilicate clay minerals to give homogeneous, coherent, transparent CNT thin films and gels.

  16. Computational Nanomechanics of Carbon Nanotubes and Composites

    NASA Technical Reports Server (NTRS)

    Srivastava, Deepak; Wei, Chenyu; Cho, Kyeongjae; Biegel, Bryan (Technical Monitor)

    2002-01-01

    Nanomechanics of individual carbon and boron-nitride nanotubes and their application as reinforcing fibers in polymer composites has been reviewed with interplay of theoretical modeling, computer simulations and experimental observations. The emphasis in this work is on elucidating the multi-length scales of the problems involved, and of different simulation techniques that are needed to address specific characteristics of individual nanotubes and nanotube polymer-matrix interfaces. Classical molecular dynamics simulations are shown to be sufficient to describe the generic behavior such as strength and stiffness modulus but are inadequate to describe elastic limit and nature of plastic buckling at large strength. Quantum molecular dynamics simulations are shown to bring out explicit atomic nature dependent behavior of these nanoscale materials objects that are not accessible either via continuum mechanics based descriptions or through classical molecular dynamics based simulations. As examples, we discus local plastic collapse of carbon nanotubes under axial compression and anisotropic plastic buckling of boron-nitride nanotubes. Dependence of the yield strain on the strain rate is addressed through temperature dependent simulations, a transition-state-theory based model of the strain as a function of strain rate and simulation temperature is presented, and in all cases extensive comparisons are made with experimental observations. Mechanical properties of nanotube-polymer composite materials are simulated with diverse nanotube-polymer interface structures (with van der Waals interaction). The atomistic mechanisms of the interface toughening for optimal load transfer through recycling, high-thermal expansion and diffusion coefficient composite formation above glass transition temperature, and enhancement of Young's modulus on addition of nanotubes to polymer are discussed and compared with experimental observations.

  17. Nickel oxide nanotube synthesis using multiwalled carbon nanotubes as sacrificial templates for supercapacitor application

    NASA Astrophysics Data System (ADS)

    Abdalla, Ahmed M.; Sahu, Rakesh P.; Wallar, Cameron J.; Chen, Ri; Zhitomirsky, Igor; Puri, Ishwar K.

    2017-02-01

    A novel approach for the fabrication of nickel oxide nanotubes based on multiwalled carbon nanotubes as a sacrificial template is described. Electroless deposition is employed to deposit nickel onto carbon nanotubes. The subsequent annealing of the product in the presence of air oxidizes nickel to nickel oxide, and carbon is released as gaseous carbon dioxide, leaving behind nickel oxide nanotubes. Electron microscopy and elemental mapping confirm the formation of nickel oxide nanotubes. New chelating polyelectrolytes are used as dispersing agents to achieve high colloidal stability for both the nickel-coated carbon nanotubes and the nickel oxide nanotubes. A gravimetric specific capacitance of 245.3 F g-1 and an areal capacitance of 3.28 F cm-2 at a scan rate of 2 mV s-1 is achieved, with an electrode fabricated using nickel oxide nanotubes as the active element with a mass loading of 24.1 mg cm-2.

  18. Nickel oxide nanotube synthesis using multiwalled carbon nanotubes as sacrificial templates for supercapacitor application.

    PubMed

    Abdalla, Ahmed M; Sahu, Rakesh P; Wallar, Cameron J; Chen, Ri; Zhitomirsky, Igor; Puri, Ishwar K

    2017-02-17

    A novel approach for the fabrication of nickel oxide nanotubes based on multiwalled carbon nanotubes as a sacrificial template is described. Electroless deposition is employed to deposit nickel onto carbon nanotubes. The subsequent annealing of the product in the presence of air oxidizes nickel to nickel oxide, and carbon is released as gaseous carbon dioxide, leaving behind nickel oxide nanotubes. Electron microscopy and elemental mapping confirm the formation of nickel oxide nanotubes. New chelating polyelectrolytes are used as dispersing agents to achieve high colloidal stability for both the nickel-coated carbon nanotubes and the nickel oxide nanotubes. A gravimetric specific capacitance of 245.3 F g(-1) and  an areal capacitance of 3.28 F cm(-2) at a scan rate of 2 mV s(-1) is achieved, with an electrode fabricated using nickel oxide nanotubes as the active element with a mass loading of 24.1 mg cm(-2).

  19. Flexible microdevices based on carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Allen, Ashante'; Cannon, Andrew; Lee, Jungchul; King, William P.; Graham, Samuel

    2006-12-01

    This work reports the fabrication and testing of flexible carbon nanotube microdevices made using hot embossing material transfer. Both micro-plasma and photodetector devices were made using as-grown unpurified multi-wall carbon nanotubes printed on PMMA substrates. Optical detectors were fabricated by attaching metal wires and monitoring the resistance as a function of light exposure. The electrical resistance of the nanotubes showed a strong sensitivity to light exposure which was also enhanced by heating the devices. While such processes in MWCNTs are not fully understood, the addition of thermal energy is believed to generate additional free charge carriers in the nanotubes. The plasma-generating microdevices consisted of a thin layer of thermoplastic polymer having the CNT electrode on one side and a metal electrode on the reverse side. The devices were electrically tested under atmospheric conditions with 0.01-1 kV ac and at 2.5 kHz, with the plasma igniting near 0.7 kV. The fabrication of these flexible organic devices demonstrates the ability to pattern useful carbon nanotube microdevices in low-cost thermoplastic polymers.

  20. Improved Method of Purifying Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Delzeit, Lance D.

    2004-01-01

    An improved method of removing the residues of fabrication from carbon nanotubes has been invented. These residues comprise amorphous carbon and metal particles that are produced during the growth process. Prior methods of removing the residues include a variety of processes that involved the use of halogens, oxygen, or air in both thermal and plasma processes. Each of the prior methods entails one or more disadvantages, including non-selectivity (removal or damage of nanotubes in addition to removal of the residues), the need to dispose of toxic wastes, and/or processing times as long as 24 hours or more. In contrast, the process described here does not include the use of toxic chemicals, the generation of toxic wastes, causes little or no damage to the carbon nanotubes, and involves processing times of less than 1 hour. In the improved method, purification is accomplished by flowing water vapor through the reaction chamber at elevated temperatures and ambient pressures. The impurities are converted to gaseous waste products by the selective hydrogenation and hydroxylation by the water in a reaction chamber. This process could be performed either immediately after growth or in a post-growth purification process. The water used needs to be substantially free of oxygen and can be obtained by a repeated freeze-pump-thaw process. The presence of oxygen will non-selectively attach the carbon nanotubes in addition to the amorphous carbon.