Caliste 64: detection unit of a spectro imager array for a hard x-ray space telescope

NASA Astrophysics Data System (ADS)

Meuris, A.; Limousin, O.; Lugiez, F.; Gevin, O.; Pinsard, F.; Blondel, C.; Le Mer, I.; Delagnes, E.; Vassal, M. C.; Soufflet, F.; Bocage, R.

2008-07-01

In the frame of the hard X-ray Simbol-X observatory, a joint CNES-ASI space mission to be flown in 2014, a prototype of miniature Cd(Zn)Te camera equipped with 64 pixels has been designed. The device, called Caliste 64, is a spectro-imager with high resolution event time-tagging capability. Caliste 64 integrates a Cd(Zn)Te semiconductor detector with segmented electrode and its front-end electronics made of 64 independent analog readout channels. This 1 × 1 × 2 cm3 camera, able to detect photons in the range from 2 keV up to 250 keV, is an elementary detection unit juxtaposable on its four sides. Consequently, large detector array can be made assembling a mosaic of Caliste 64 units. Electronics readout module is achieved by stacking four IDeF-X V1.1 ASICs, perpendicular to the detection plane. We achieved good noise performances, with a mean Equivalent Noise Charge of ~65 electrons rms over the 64 channels. Time resolution is better than 70 ns rms for energy deposits greater than 50 keV, taking into account electronic noise and technological dispersal, which enables to reject background by anticoincidence with very low probability of error. For the first prototypes, we chose CdTe detectors equipped with Al-Ti-Au Schottky barrier contacts because of their very low dark current and excellent spectroscopic performances. So far, three Caliste 64 cameras have been realized and tested. When the crystal is cooled down to -10°C, the sum spectrum built with the 64 pixels of a Caliste 64 sample results in a spectral resolution of 664 eV FWHM at 13.94 keV and 841 eV FWHM at 59.54 keV.

Development of Tiled Imaging CZT Detectors for Sensitive Wide-Field Hard X-Ray Surveys to EXIST

NASA Technical Reports Server (NTRS)

Grindlay, J.; Hong, J.; Allen, B.; Barthelmy, S.; Baker, R.

2011-01-01

Motivated by the proposed EXIST mission, a "medium-class" space observatory to survey black holes and the Early Universe proposed to the 2010 NAS/NRC Astronomy and Astrophysics Decadal Survey, we have developed the first "large" area 256 sq cm close-tiled (0.6 mm gaps) hard X-ray (20-600 keV) imaging detector employing pixelated (2.5 mm) CdZnTe (CZT) detectors, each 2 x 2 x 0.5 cubic cm. We summarize the design, development and operation of this detector array (8 x 8 CZTs) and its performance as the imager for a coded aperture telescope on a high altitude (40 km) balloon flight in October. 2009, as the ProtoEX1STl payload. We then outline our current development of a second-generation imager, ProtcEXIST2. with 0.6 mm pixels on a 32 x 32 array on each CZT, and how it will lead to the ultimate imaging system needed for EXIST. Other applications of this technology will also be mentioned.

Fast Neutron Detection Using Pixelated CdZnTe Spectrometers

NASA Astrophysics Data System (ADS)

Streicher, Michael; Goodman, David; Zhu, Yuefeng; Brown, Steven; Kiff, Scott; He, Zhong

2017-07-01

Fast neutrons are an important signature of special nuclear materials (SNMs). They have a low natural background rate and readily penetrate high atomic number materials that easily shield gamma-ray signatures. Therefore, they provide a complementary signal to gamma rays for detecting shielded SNM. Scattering kinematics dictate that a large nucleus (such as Cd or Te) will recoil with small kinetic energy after an elastic collision with a fast neutron. Charge carrier recombination and quenching further reduce the recorded energy deposited. Thus, the energy threshold of CdZnTe detectors must be very low in order to sense the small signals from these recoils. In this paper, the threshold was reduced to less than 5 keVee to demonstrate that the 5.9-keV X-ray line from 55Fe could be separated from electronic noise. Elastic scattering neutron interactions were observed as small energy depositions (less than 20 keVee) using digitally sampled pulse waveforms from pixelated CdZnTe detectors. Characteristic gamma-ray lines from inelastic neutron scattering were also observed.

Study of sub-pixel position resolution with time-correlated transient signals in 3D pixelated CdZnTe detectors with varying pixel sizes

NASA Astrophysics Data System (ADS)

Ocampo Giraldo, L.; Bolotnikov, A. E.; Camarda, G. S.; De Geronimo, G.; Fried, J.; Gul, R.; Hodges, D.; Hossain, A.; Ünlü, K.; Vernon, E.; Yang, G.; James, R. B.

2018-03-01

We evaluated the sub-pixel position resolution achievable in large-volume CdZnTe pixelated detectors with conventional pixel patterns and for several different pixel sizes: 2.8 mm, 1.72 mm, 1.4 mm and 0.8 mm. Achieving position resolution below the physical dimensions of pixels (sub-pixel resolution) is a practical path for making high-granularity position-sensitive detectors, <100 μm, using a limited number of pixels dictated by the mechanical constraints and multi-channel readout electronics. High position sensitivity is important for improving the imaging capability of CZT gamma cameras. It also allows for making more accurate corrections of response non-uniformities caused by crystal defects, thus enabling use of standard-grade (unselected) and less expensive CZT crystals for producing large-volume position-sensitive CZT detectors feasible for many practical applications. We analyzed the digitized charge signals from a representative 9 pixels and the cathode, generated using a pulsed-laser light beam focused down to 10 μm (650 nm) to scan over a selected 3 × 3 pixel area. We applied our digital pulse processing technique to the time-correlated signals captured from adjacent pixels to achieve and evaluate the capability for sub-pixel position resolution. As an example, we also demonstrated an application of 3D corrections to improve the energy resolution and positional information of the events for the tested detectors.

Study of sub-pixel position resolution with time-correlated transient signals in 3D pixelated CdZnTe detectors with varying pixel sizes

DOE PAGES

Giraldo, L. Ocampo; Bolotnikov, A. E.; Camarda, G. S.; ...

2017-12-18

Here, we evaluated the sub-pixel position resolution achievable in large-volume CdZnTe pixelated detectors with conventional pixel patterns and for several different pixel sizes: 2.8 mm, 1.72 mm, 1.4 mm and 0.8 mm. Achieving position resolution below the physical dimensions of pixels (sub-pixel resolution) is a practical path for making high-granularity position-sensitive detectors, <100 μμm, using a limited number of pixels dictated by the mechanical constraints and multi-channel readout electronics. High position sensitivity is important for improving the imaging capability of CZT gamma cameras. It also allows for making more accurate corrections of response non-uniformities caused by crystal defects, thus enablingmore » use of standard-grade (unselected) and less expensive CZT crystals for producing large-volume position-sensitive CZT detectors feasible for many practical applications. We analyzed the digitized charge signals from a representative 9 pixels and the cathode, generated using a pulsed-laser light beam focused down to 10 m (650 nm) to scan over a selected 3×3 pixel area. We applied our digital pulse processing technique to the time-correlated signals captured from adjacent pixels to achieve and evaluate the capability for sub-pixel position resolution. As an example, we also demonstrated an application of 3D corrections to improve the energy resolution and positional information of the events for the tested detectors.« less

Study of sub-pixel position resolution with time-correlated transient signals in 3D pixelated CdZnTe detectors with varying pixel sizes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giraldo, L. Ocampo; Bolotnikov, A. E.; Camarda, G. S.

Here, we evaluated the sub-pixel position resolution achievable in large-volume CdZnTe pixelated detectors with conventional pixel patterns and for several different pixel sizes: 2.8 mm, 1.72 mm, 1.4 mm and 0.8 mm. Achieving position resolution below the physical dimensions of pixels (sub-pixel resolution) is a practical path for making high-granularity position-sensitive detectors, <100 μμm, using a limited number of pixels dictated by the mechanical constraints and multi-channel readout electronics. High position sensitivity is important for improving the imaging capability of CZT gamma cameras. It also allows for making more accurate corrections of response non-uniformities caused by crystal defects, thus enablingmore » use of standard-grade (unselected) and less expensive CZT crystals for producing large-volume position-sensitive CZT detectors feasible for many practical applications. We analyzed the digitized charge signals from a representative 9 pixels and the cathode, generated using a pulsed-laser light beam focused down to 10 m (650 nm) to scan over a selected 3×3 pixel area. We applied our digital pulse processing technique to the time-correlated signals captured from adjacent pixels to achieve and evaluate the capability for sub-pixel position resolution. As an example, we also demonstrated an application of 3D corrections to improve the energy resolution and positional information of the events for the tested detectors.« less

Results from a Prototype Multi-Element CdZnTe Gamma-Ray Detector for Planetary Missions

NASA Technical Reports Server (NTRS)

Moss, C. E.; Browne, M. C.; Ianakiev, K. D.; Prettyman, T. H.; Reedy, R. C.

2001-01-01

We present high energy results for a 2 x 2 x 2 array of eight 10 mm x 10 mm x 5 mm coplanar grid CdZnTe detectors. We conclude that such an array can provide a room-temperature detector with good resolution and efficiency for planetary missions. Additional information is contained in the original extended abstract.

A mechanism for dynamic lateral polarization in CdZnTe under high flux x-ray irradiation

NASA Astrophysics Data System (ADS)

Bale, Derek S.; Soldner, Stephen A.; Szeles, Csaba

2008-02-01

It has been observed that pixillated CdZnTe detectors fabricated from crystals with low hole transport properties (μhτh<10-5cm2V-1) experience a dynamic lateral polarization when exposed to a high flux of x-rays. In this effect, counts are transferred from pixels near the edge of the irradiated region to pixels in the interior. In this letter, we propose a mechanism capable of explaining the observed dynamical effect. The mechanism is based on a transverse electric field that is generated due to space charge that builds within the material. This transverse field, in turn, is responsible for the altered carrier trajectories toward the center of the irradiated region.

Polarimetric analysis of a CdZnTe spectro-imager under multi-pixel irradiation conditions

NASA Astrophysics Data System (ADS)

Pinto, M.; da Silva, R. M. Curado; Maia, J. M.; Simões, N.; Marques, J.; Pereira, L.; Trindade, A. M. F.; Caroli, E.; Auricchio, N.; Stephen, J. B.; Gonçalves, P.

2016-12-01

So far, polarimetry in high-energy astrophysics has been insufficiently explored due to the complexity of the required detection, electronic and signal processing systems. However, its importance is today largely recognized by the astrophysical community, therefore the next generation of high-energy space instruments will certainly provide polarimetric observations, contemporaneously with spectroscopy and imaging. We have been participating in high-energy observatory proposals submitted to ESA Cosmic Vision calls, such as GRI (Gamma-Ray Imager), DUAL and ASTROGAM, where the main instrument was a spectro-imager with polarimetric capabilities. More recently, the H2020 AHEAD project was launched with the objective to promote more coherent and mature future high-energy space mission proposals. In this context of high-energy proposal development, we have tested a CdZnTe detection plane prototype polarimeter under a partially polarized gamma-ray beam generated from an aluminum target irradiated by a 22Na (511 keV) radioactive source. The polarized beam cross section was 1 cm2, allowing the irradiation of a wide multi-pixelated area where all the pixels operate simultaneously as a scatterer and as an absorber. The methods implemented to analyze such multi-pixel irradiation are similar to those required to analyze a spectro-imager polarimeter operating in space, since celestial source photons should irradiate its full pixilated area. Correction methods to mitigate systematic errors inherent to CdZnTe and to the experimental conditions were also implemented. The polarization level ( 40%) and the polarization angle (precision of ±5° up to ±9°) obtained under multi-pixel irradiation conditions are presented and compared with simulated data.

Fast Neutron Detection using Pixelated CdZnTe Spectrometers

DOE PAGES

Streicher, Michael; Goodman, David; Zhu, Yuefeng; ...

2017-05-29

One important important signature of special nuclear materials (SNM) are fast neutrons. Fast neutrons have a low natural background rate and readily penetrate high atomic number materials which easily shield gamma-ray signatures. Thus, fast neutrons provide a complementary signal to gamma rays for detecting shielded SNM. Scattering kinematics dictate that a large nucleus (such as Cd or Te) will recoil with small kinetic energy after an elastic collision with a fast neutron. Charge carrier recombination and quenching further reduce the recorded energy deposited. Thus, the energy threshold of CdZnTe detectors must be very low in order to sense the smallmore » signals from these recoils. Here, the threshold was reduced to less than 5 keVee to demonstrate that the 5.9 keV x-ray line from 55Fe could be separated from electronic noise. Elastic scattering neutron interactions were observed as small energy depositions (less than 20 keVee) using digitally-sampled pulse waveforms from pixelated CdZnTe detectors. Characteristic gamma-ray lines from inelastic neutron scattering were also observed.« less

Performance simulation of an x-ray detector for spectral CT with combined Si and Cd[Zn]Te detection layers

NASA Astrophysics Data System (ADS)

Herrmann, Christoph; Engel, Klaus-Jürgen; Wiegert, Jens

2010-12-01

The most obvious problem in obtaining spectral information with energy-resolving photon counting detectors in clinical computed tomography (CT) is the huge x-ray flux present in conventional CT systems. At high tube voltages (e.g. 140 kVp), despite the beam shaper, this flux can be close to 109 Mcps mm-2 in the direct beam or in regions behind the object, which are close to the direct beam. Without accepting the drawbacks of truncated reconstruction, i.e. estimating missing direct-beam projection data, a photon-counting energy-resolving detector has to be able to deal with such high count rates. Sub-structuring pixels into sub-pixels is not enough to reduce the count rate per pixel to values that today's direct converting Cd[Zn]Te material can cope with (<=10 Mcps in an optimistic view). Below 300 µm pixel pitch, x-ray cross-talk (Compton scatter and K-escape) and the effect of charge diffusion between pixels are problematic. By organising the detector in several different layers, the count rate can be further reduced. However this alone does not limit the count rates to the required level, since the high stopping power of the material becomes a disadvantage in the layered approach: a simple absorption calculation for 300 µm pixel pitch shows that the required layer thickness of below 10 Mcps/pixel for the top layers in the direct beam is significantly below 100 µm. In a horizontal multi-layer detector, such thin layers are very difficult to manufacture due to the brittleness of Cd[Zn]Te. In a vertical configuration (also called edge-on illumination (Ludqvist et al 2001 IEEE Trans. Nucl. Sci. 48 1530-6, Roessl et al 2008 IEEE NSS-MIC-RTSD 2008, Conf. Rec. Talk NM2-3)), bonding of the readout electronics (with pixel pitches below 100 µm) is not straightforward although it has already been done successfully (Pellegrini et al 2004 IEEE NSS MIC 2004 pp 2104-9). Obviously, for the top detector layers, materials with lower stopping power would be advantageous. The possible choices are, however, quite limited, since only 'mature' materials, which operate at room temperature and can be manufactured reliably should reasonably be considered. Since GaAs is still known to cause reliability problems, the simplest choice is Si, however with the drawback of strong Compton scatter which can cause considerable inter-pixel cross-talk. To investigate the potential and the problems of Si in a multi-layer detector, in this paper the combination of top detector layers made of Si with lower layers made of Cd[Zn]Te is studied by using Monte Carlo simulated detector responses. It is found that the inter-pixel cross-talk due to Compton scatter is indeed very high; however, with an appropriate cross-talk correction scheme, which is also described, the negative effects of cross-talk are shown to be removed to a very large extent.

Using a pulsed laser beam to investigate the feasibility of sub-pixel position resolution with time-correlated transient signals in 3D pixelated CdZnTe detectors

DOE PAGES

Giraldo, L. Ocampo; Bolotnikov, A. E.; Camarda, G. S.; ...

2017-04-20

For this study, we evaluated the X-Y position resolution achievable in 3D pixelated detectors by processing the signal waveforms readout from neighboring pixels. In these measurements we used a focused light beam, down to 10 μm, generated by a ~1 mW pulsed laser (650 nm) to carry out raster scans over selected 3×3 pixel areas, while recording the charge signals from the 9 pixels and the cathode using two synchronized digital oscilloscopes.

Caliste 64: detection unit of a spectro imager array for a hard x-ray space telescope

NASA Astrophysics Data System (ADS)

Limousin, O.; Meuris, A.; Lugiez, F.; Gevin, Olivier; Pinsard, F.; Blondel, C.; Le Mer, I.; Delagnes, E.; Vassal, M. C.; Soufflet, F.; Bocage, R.; Penquer, A.; Billot, M.

2017-11-01

In the frame of the hard X-ray Simbol-X observatory, a joint CNES-ASI space mission to be flown in 2014, a prototype of miniature Cd(Zn)Te camera equipped with 64 pixels has been designed. The device, called Caliste 64, is a spectro-imager with high resolution event timetagging capability. Caliste 64 integrates a Cd(Zn)Te semiconductor detector with segmented electrode and its front-end electronics made of 64 independent analog readout channels. This 1 × 1 × 2 cm3 camera, able to detect photons in the range from 2 keV up to 250 keV, is an elementary detection unit juxtaposable on its four sides. Consequently, large detector array can be made assembling a mosaic of Caliste 64 units. Electronics readout module is achieved by stacking four IDeF-X V1.1 ASICs, perpendicular to the detection plane. We achieved good noise performances, with a mean Equivalent Noise Charge of 65 electrons rms over the 64 channels. For the first prototypes, we chose Pt//CdTe//Al/Ti/Au Schottky detectors because of their very low dark current and excellent spectroscopic performances. Recently a Caliste 64 prototype has been also equipped with a 2 mm thick Au//CdZnTe//Au detector. This paper presents the performances of these four prototypes and demonstrates spectral performances better than 1 keV fwhm at 59.54 keV when the samples are moderately cooled down to -10°C.

Performance simulation of an x-ray detector for spectral CT with combined Si and Cd[Zn]Te detection layers.

PubMed

Herrmann, Christoph; Engel, Klaus-Jürgen; Wiegert, Jens

2010-12-21

The most obvious problem in obtaining spectral information with energy-resolving photon counting detectors in clinical computed tomography (CT) is the huge x-ray flux present in conventional CT systems. At high tube voltages (e.g. 140 kVp), despite the beam shaper, this flux can be close to 10⁹ Mcps mm⁻² in the direct beam or in regions behind the object, which are close to the direct beam. Without accepting the drawbacks of truncated reconstruction, i.e. estimating missing direct-beam projection data, a photon-counting energy-resolving detector has to be able to deal with such high count rates. Sub-structuring pixels into sub-pixels is not enough to reduce the count rate per pixel to values that today's direct converting Cd[Zn]Te material can cope with (≤ 10 Mcps in an optimistic view). Below 300 µm pixel pitch, x-ray cross-talk (Compton scatter and K-escape) and the effect of charge diffusion between pixels are problematic. By organising the detector in several different layers, the count rate can be further reduced. However this alone does not limit the count rates to the required level, since the high stopping power of the material becomes a disadvantage in the layered approach: a simple absorption calculation for 300 µm pixel pitch shows that the required layer thickness of below 10 Mcps/pixel for the top layers in the direct beam is significantly below 100 µm. In a horizontal multi-layer detector, such thin layers are very difficult to manufacture due to the brittleness of Cd[Zn]Te. In a vertical configuration (also called edge-on illumination (Ludqvist et al 2001 IEEE Trans. Nucl. Sci. 48 1530-6, Roessl et al 2008 IEEE NSS-MIC-RTSD 2008, Conf. Rec. Talk NM2-3)), bonding of the readout electronics (with pixel pitches below 100 µm) is not straightforward although it has already been done successfully (Pellegrini et al 2004 IEEE NSS MIC 2004 pp 2104-9). Obviously, for the top detector layers, materials with lower stopping power would be advantageous. The possible choices are, however, quite limited, since only 'mature' materials, which operate at room temperature and can be manufactured reliably should reasonably be considered. Since GaAs is still known to cause reliability problems, the simplest choice is Si, however with the drawback of strong Compton scatter which can cause considerable inter-pixel cross-talk. To investigate the potential and the problems of Si in a multi-layer detector, in this paper the combination of top detector layers made of Si with lower layers made of Cd[Zn]Te is studied by using Monte Carlo simulated detector responses. It is found that the inter-pixel cross-talk due to Compton scatter is indeed very high; however, with an appropriate cross-talk correction scheme, which is also described, the negative effects of cross-talk are shown to be removed to a very large extent.

Use of high-granularity CdZnTe pixelated detectors to correct response non-uniformities caused by defects in crystals

DOE PAGES

Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; ...

2015-09-06

Following our successful demonstration of the position-sensitive virtual Frisch-grid detectors, we investigated the feasibility of using high-granularity position sensing to correct response non-uniformities caused by the crystal defects in CdZnTe (CZT) pixelated detectors. The development of high-granularity detectors able to correct response non-uniformities on a scale comparable to the size of electron clouds opens the opportunity of using unselected off-the-shelf CZT material, whilst still assuring high spectral resolution for the majority of the detectors fabricated from an ingot. Here, we present the results from testing 3D position-sensitive 15×15×10 mm 3 pixelated detectors, fabricated with conventional pixel patterns with progressively smallermore » pixel sizes: 1.4, 0.8, and 0.5 mm. We employed the readout system based on the H3D front-end multi-channel ASIC developed by BNL's Instrumentation Division in collaboration with the University of Michigan. We use the sharing of electron clouds among several adjacent pixels to measure locations of interaction points with sub-pixel resolution. By using the detectors with small-pixel sizes and a high probability of the charge-sharing events, we were able to improve their spectral resolutions in comparison to the baseline levels, measured for the 1.4-mm pixel size detectors with small fractions of charge-sharing events. These results demonstrate that further enhancement of the performance of CZT pixelated detectors and reduction of costs are possible by using high spatial-resolution position information of interaction points to correct the small-scale response non-uniformities caused by crystal defects present in most devices.« less

Correlation Between Bulk Material Defects and Spectroscopic Response in Cadmium Zinc Telluride Detectors

NASA Technical Reports Server (NTRS)

Parker, Bradford H.; Stahle, C. M.; Barthelmy, S. D.; Parsons, A. M.; Tueller, J.; VanSant, J. T.; Munoz, B. F.; Snodgrass, S. J.; Mullinix, R. E.

1999-01-01

One of the critical challenges for large area cadmium zinc telluride (CdZnTe) detector arrays is obtaining material capable of uniform imaging and spectroscopic response. Two complementary nondestructive techniques for characterizing bulk CdZnTe have been developed to identify material with a uniform response. The first technique, infrared transmission imaging, allows for rapid visualization of bulk defects. The second technique, x-ray spectral mapping, provides a map of the material spectroscopic response when it is configured as a planar detector. The two techniques have been used to develop a correlation between bulk defect type and detector performance. The correlation allows for the use of infrared imaging to rapidly develop wafer mining maps. The mining of material free of detrimental defects has the potential to dramatically increase the yield and quality of large area CdZnTe detector arrays.

Characterisation of Redlen high-flux CdZnTe

NASA Astrophysics Data System (ADS)

Thomas, B.; Veale, M. C.; Wilson, M. D.; Seller, P.; Schneider, A.; Iniewski, K.

2017-12-01

CdZnTe is a promising material for the current generation of free electron laser light sources and future laser-driven γ-ray sources which require detectors capable of high flux imaging at X-ray and γ-ray energies (> 10 keV) . However, at high fluxes CdZnTe has been shown to polarise due to hole trapping, leading to poor performance. Novel Redlen CdZnTe material with improved hole transport properties has been designed for high flux applications. Small pixel CdZnTe detectors were fabricated by Redlen Technologies and flip-chip bonded to PIXIE ASICs. An XIA Digital Gamma Finder PIXIE-16 system was used to digitise each of the nine analogue signals with a timing resolution of 10 ns. Pulse shape analysis was used to extract the rise times and amplitude of signals. These were measured as a function of applied bias voltage and used to calculate the mobility (μ) and mobility-lifetime (μτ) of electrons and holes in the material for three identical detectors. The measured values of the transport properties of electrons in the high-flux-capable material was lower than previously reported for Redlen CdZnTe material (μeτe ~ 1 × 10-3 cm2V-1 and μe ~ 1000 cm2V-1s-1) while the hole transport properties were found to have improved (μhτh ~ 3 × 10-4 cm2V-1 and μh ~ 100 cm2V-1s-1).

Development of a Spectral Model Based on Charge Transport for the Swift/BAT 32K CdZnTe Detector Array

NASA Technical Reports Server (NTRS)

Sato, Goro; Parsons, Ann; Hillinger, Derek; Suzuki, Masaya; Takahashi, Tadayuki; Tashiro, Makoto; Nakazawa, Kazuhiro; Okada, Yuu; Takahashi, Hiromitsu; Watanabe, Shin

2005-01-01

The properties of 32K CdZnTe (4 x 4 sq mm large, 2 mm thick) detectors have been studied in the pre-flight calibration of the Burst Alert Telescope (BAT) on-board the Swift Gamma-ray Burst Explorer (scheduled for launch in November 2004). In order to understand the energy response of the BAT CdZnTe array, we first quantify the mobility-lifetime (mu tau) products of carriers in individual CdZnTe detectors, which produce a position dependency in the charge induction efficiency and results in a low energy tail in the energy spectrum. Based on a new method utilizing (57)Co spectra obtained at different bias voltages, the mu tau for electrons ranges from 5.0 x 10(exp -4) to 1.0 x 10(exp -2) sq cm/V while the mu tau for holes ranges from 1.3 x 10(exp -5 to 1.8 x 10(exp -4) sq cm/V. We find that this wide distribution of mu tau products explains the large diversity in spectral shapes between CdZnTe detectors well. We also find that the variation of mu tau products can be attributed to the difference of crystal ingots or manufacturing harness. We utilize the 32K sets of extracted mu tau products to develop a spectral model of the detector. In combination with Monte Carlo simulations, we can construct a spectral model for any photon energy or any incident angle.

Affordable CZT SPECT with dose-time minimization (Conference Presentation)

NASA Astrophysics Data System (ADS)

Hugg, James W.; Harris, Brian W.; Radley, Ian

2017-03-01

PURPOSE Pixelated CdZnTe (CZT) detector arrays are used in molecular imaging applications that can enable precision medicine, including small-animal SPECT, cardiac SPECT, molecular breast imaging (MBI), and general purpose SPECT. The interplay of gamma camera, collimator, gantry motion, and image reconstruction determines image quality and dose-time-FOV tradeoffs. Both dose and exam time can be minimized without compromising diagnostic content. METHODS Integration of pixelated CZT detectors with advanced ASICs and readout electronics improves system performance. Because historically CZT was expensive, the first clinical applications were limited to small FOV. Radiation doses were initially high and exam times long. Advances have significantly improved efficiency of CZT-based molecular imaging systems and the cost has steadily declined. We have built a general purpose SPECT system using our 40 cm x 53 cm CZT gamma camera with 2 mm pixel pitch and characterized system performance. RESULTS Compared to NaI scintillator gamma cameras: intrinsic spatial resolution improved from 3.8 mm to 2.0 mm; energy resolution improved from 9.8% to <4 % at 140 keV; maximum count rate is <1.5 times higher; non-detection camera edges are reduced 3-fold. Scattered photons are greatly reduced in the photopeak energy window; image contrast is improved; and the optimal FOV is increased to the entire camera area. CONCLUSION Continual improvements in CZT detector arrays for molecular imaging, coupled with optimal collimator and image reconstruction, result in minimized dose and exam time. With CZT cost improving, affordable whole-body CZT general purpose SPECT is expected to enable precision medicine applications.

Development of EXITE3, Imaging Detectors and a Long Duration Balloon Gondola

NASA Technical Reports Server (NTRS)

2003-01-01

In this Report we summarize the work conducted for the EXITE program under grant NAG5-5103. This grant supported the ongoing EXITE program at Harvard for the development of imaging hard x-ray detectors and telescopes over the 3 year period 1997-2000 with a one year extension to 2001 to transition to the next SR&T grant in this program. Work was conducted in three major parts: analysis of the EXITE2 balloon flight data (from our May 1997 flight); development of pixellated imaging Cd-Zn-Te detector arrays and readout systems for the proposed EXITE3 detector and telescope; and development of systems for a Long Duration Balloon (LDB) gondola. Progress on all three major aspects of this research is summarized for each of the years of this grant.

Test apparatus to monitor time-domain signals from semiconductor-detector pixel arrays

NASA Astrophysics Data System (ADS)

Haston, Kyle; Barber, H. Bradford; Furenlid, Lars R.; Salçin, Esen; Bora, Vaibhav

2011-10-01

Pixellated semiconductor detectors, such as CdZnTe, CdTe, or TlBr, are used for gamma-ray imaging in medicine and astronomy. Data analysis for these detectors typically estimates the position (x, y, z) and energy (E) of each interacting gamma ray from a set of detector signals {Si} corresponding to completed charge transport on the hit pixel and any of its neighbors that take part in charge sharing, plus the cathode. However, it is clear from an analysis of signal induction, that there are transient signal on all pixel electrodes during the charge transport and, when there is charge trapping, small negative residual signals on all electrodes. If we wish to optimally obtain the event parameters, we should take all these signals into account. We wish to estimate x,y,z and E from the set of all electrode signals, {Si(t)}, including time dependence, using maximum-likelihood techniques[1]. To do this, we need to determine the probability of the electrode signals, given the event parameters {x, y, z, E}, i.e. Pr( {Si(t)} | {x, y, z, E} ). Thus we need to map the detector response of all pixels, {Si(t)}, for a large number of events with known x,y,z and E.In this paper we demonstrate the existence of the transient signals and residual signals and determine their magnitudes. They are typically 50-100 times smaller than the hit-pixel signals. We then describe development of an apparatus to measure the response of a 16-pixel semiconductor detector and show some preliminary results. We also discuss techniques for measuring the event parameters for individual gamma-ray interactions, a requirement for determining Pr( {Si(t)} | {x, y, z, E}).

Tomographic Small-Animal Imaging Using a High-Resolution Semiconductor Camera

PubMed Central

Kastis, GA; Wu, MC; Balzer, SJ; Wilson, DW; Furenlid, LR; Stevenson, G; Barber, HB; Barrett, HH; Woolfenden, JM; Kelly, P; Appleby, M

2015-01-01

We have developed a high-resolution, compact semiconductor camera for nuclear medicine applications. The modular unit has been used to obtain tomographic images of phantoms and mice. The system consists of a 64 x 64 CdZnTe detector array and a parallel-hole tungsten collimator mounted inside a 17 cm x 5.3 cm x 3.7 cm tungsten-aluminum housing. The detector is a 2.5 cm x 2.5 cm x 0.15 cm slab of CdZnTe connected to a 64 x 64 multiplexer readout via indium-bump bonding. The collimator is 7 mm thick, with a 0.38 mm pitch that matches the detector pixel pitch. We obtained a series of projections by rotating the object in front of the camera. The axis of rotation was vertical and about 1.5 cm away from the collimator face. Mouse holders were made out of acrylic plastic tubing to facilitate rotation and the administration of gas anesthetic. Acquisition times were varied from 60 sec to 90 sec per image for a total of 60 projections at an equal spacing of 6 degrees between projections. We present tomographic images of a line phantom and mouse bone scan and assess the properties of the system. The reconstructed images demonstrate spatial resolution on the order of 1–2 mm. PMID:26568676

The Effect of Twin Boundaries on the Spectroscopic Performance of CdZnTe Detectors

NASA Technical Reports Server (NTRS)

Parker, Bradford H.; Stahle, C. M.; Roth, D.; Babu, S.; Tueller, Jack; Powers, Edward I. (Technical Monitor)

2001-01-01

Most single grains in cadmium zinc telluride (CdZnTe) grown by the high-pressure Bridgman (HPB) technique contain multiple twin boundaries. As a consequence, twin boundaries are one of the most common macroscopic material defects found in large area (400 to 700 sq mm) CdZnTe specimens obtained from HPB ingots. Due to the prevalence of twin boundaries, understanding their effect on detector performance is key to the material selection process. Twin boundaries in several 2 mm thick large area specimens were first, documented using infrared transmission imaging. These specimens were then fabricated into either 2 mm pixel or planar detectors in order to examine the effect of the twin boundaries on detector performance. Preliminary results show that twin boundaries, which are decorated with tellurium inclusions, produce a reduction in detector efficiency and a degradation in resolution. The extent of the degradation appears to be a function of the density of tellurium inclusions.

Charge-sensitive front-end electronics with operational amplifiers for CdZnTe detectors

NASA Astrophysics Data System (ADS)

Födisch, P.; Berthel, M.; Lange, B.; Kirschke, T.; Enghardt, W.; Kaever, P.

2016-09-01

Cadmium zinc telluride (CdZnTe, CZT) radiation detectors are suitable for a variety of applications, due to their high spatial resolution and spectroscopic energy performance at room temperature. However, state-of-the-art detector systems require high-performance readout electronics. Though an application-specific integrated circuit (ASIC) is an adequate solution for the readout, requirements of high dynamic range and high throughput are not available in any commercial circuit. Consequently, the present study develops the analog front-end electronics with operational amplifiers for an 8×8 pixelated CZT detector. For this purpose, we modeled an electrical equivalent circuit of the CZT detector with the associated charge-sensitive amplifier (CSA). Based on a detailed network analysis, the circuit design is completed by numerical values for various features such as ballistic deficit, charge-to-voltage gain, rise time, and noise level. A verification of the performance is carried out by synthetic detector signals and a pixel detector. The experimental results with the pixel detector assembly and a 22Na radioactive source emphasize the depth dependence of the measured energy. After pulse processing with depth correction based on the fit of the weighting potential, the energy resolution is 2.2% (FWHM) for the 511 keV photopeak.

OPTIMIZATION OF VIRTUAL FRISCH-GRID CdZnTe DETECTOR DESIGNS FOR IMAGING AND SPECTROSCOPY OF GAMMA RAYS.

DOE Office of Scientific and Technical Information (OSTI.GOV)

BOLOTNIKOV,A.E.; ABDUL-JABBAR, N.M.; BABALOLA, S.

2007-08-21

In the past, various virtual Frisch-grid designs have been proposed for cadmium zinc telluride (CZT) and other compound semiconductor detectors. These include three-terminal, semi-spherical, CAPture, Frisch-ring, capacitive Frisch-grid and pixel devices (along with their modifications). Among them, the Frisch-grid design employing a non-contacting ring extended over the entire side surfaces of parallelepiped-shaped CZT crystals is the most promising. The defect-free parallelepiped-shaped crystals with typical dimensions of 5x5{approx}12 mm3 are easy to produce and can be arranged into large arrays used for imaging and gamma-ray spectroscopy. In this paper, we report on further advances of the virtual Frisch-grid detector design formore » the parallelepiped-shaped CZT crystals. Both the experimental testing and modeling results are described.« less

An array of virtual Frisch-grid CdZnTe detectors and a front-end application-specific integrated circuit for large-area position-sensitive gamma-ray cameras.

PubMed

Bolotnikov, A E; Ackley, K; Camarda, G S; Cherches, C; Cui, Y; De Geronimo, G; Fried, J; Hodges, D; Hossain, A; Lee, W; Mahler, G; Maritato, M; Petryk, M; Roy, U; Salwen, C; Vernon, E; Yang, G; James, R B

2015-07-01

We developed a robust and low-cost array of virtual Frisch-grid CdZnTe detectors coupled to a front-end readout application-specific integrated circuit (ASIC) for spectroscopy and imaging of gamma rays. The array operates as a self-reliant detector module. It is comprised of 36 close-packed 6 × 6 × 15 mm(3) detectors grouped into 3 × 3 sub-arrays of 2 × 2 detectors with the common cathodes. The front-end analog ASIC accommodates up to 36 anode and 9 cathode inputs. Several detector modules can be integrated into a single- or multi-layer unit operating as a Compton or a coded-aperture camera. We present the results from testing two fully assembled modules and readout electronics. The further enhancement of the arrays' performance and reduction of their cost are possible by using position-sensitive virtual Frisch-grid detectors, which allow for accurate corrections of the response of material non-uniformities caused by crystal defects.

ChromAIX2: A large area, high count-rate energy-resolving photon counting ASIC for a Spectral CT Prototype

NASA Astrophysics Data System (ADS)

Steadman, Roger; Herrmann, Christoph; Livne, Amir

2017-08-01

Spectral CT based on energy-resolving photon counting detectors is expected to deliver additional diagnostic value at a lower dose than current state-of-the-art CT [1]. The capability of simultaneously providing a number of spectrally distinct measurements not only allows distinguishing between photo-electric and Compton interactions but also discriminating contrast agents that exhibit a K-edge discontinuity in the absorption spectrum, referred to as K-edge Imaging [2]. Such detectors are based on direct converting sensors (e.g. CdTe or CdZnTe) and high-rate photon counting electronics. To support the development of Spectral CT and show the feasibility of obtaining rates exceeding 10 Mcps/pixel (Poissonian observed count-rate), the ChromAIX ASIC has been previously reported showing 13.5 Mcps/pixel (150 Mcps/mm2 incident) [3]. The ChromAIX has been improved to offer the possibility of a large area coverage detector, and increased overall performance. The new ASIC is called ChromAIX2, and delivers count-rates exceeding 15 Mcps/pixel with an rms-noise performance of approximately 260 e-. It has an isotropic pixel pitch of 500 μm in an array of 22×32 pixels and is tile-able on three of its sides. The pixel topology consists of a two stage amplifier (CSA and Shaper) and a number of test features allowing to thoroughly characterize the ASIC without a sensor. A total of 5 independent thresholds are also available within each pixel, allowing to acquire 5 spectrally distinct measurements simultaneously. The ASIC also incorporates a baseline restorer to eliminate excess currents induced by the sensor (e.g. dark current and low frequency drifts) which would otherwise cause an energy estimation error. In this paper we report on the inherent electrical performance of the ChromAXI2 as well as measurements obtained with CZT (CdZnTe)/CdTe sensors and X-rays and radioactive sources.

An array of virtual Frisch-grid CdZnTe detectors and a front-end application-specific integrated circuit for large-area position-sensitive gamma-ray cameras

DOE PAGES

Bolotnikov, A. E.; Ackley, K.; Camarda, G. S.; ...

2015-07-28

We developed a robust and low-cost array of virtual Frisch-grid CdZnTe (CZT) detectors coupled to a front-end readout ASIC for spectroscopy and imaging of gamma rays. The array operates as a self-reliant detector module. It is comprised of 36 close-packed 6x6x15 mm 3 detectors grouped into 3x3 sub-arrays of 2x2 detectors with the common cathodes. The front-end analog ASIC accommodates up to 36 anode and 9 cathode inputs. Several detector modules can be integrated into a single- or multi-layer unit operating as a Compton or a coded-aperture camera. We present the results from testing two fully assembled modules and readoutmore » electronics. The further enhancement of the arrays’ performance and reduction of their cost are made possible by using position-sensitive virtual Frisch-grid detectors, which allow for accurate corrections of the response of material non-uniformities caused by crystal defects.« less

MBE Growth of HgCdTe on Large-Area Si and CdZnTe Wafers for SWIR, MWIR and LWIR Detection

NASA Astrophysics Data System (ADS)

Reddy, M.; Peterson, J. M.; Lofgreen, D. D.; Franklin, J. A.; Vang, T.; Smith, E. P. G.; Wehner, J. G. A.; Kasai, I.; Bangs, J. W.; Johnson, S. M.

2008-09-01

Molecular beam epitaxy (MBE) growth of HgCdTe on large-size Si (211) and CdZnTe (211)B substrates is critical to meet the demands of extremely uniform and highly functional third-generation infrared (IR) focal-panel arrays (FPAs). We have described here the importance of wafer maps of HgCdTe thickness, composition, and the macrodefects across the wafer not only to qualify material properties against design specifications but also to diagnose and classify the MBE-growth-related issues on large-area wafers. The paper presents HgCdTe growth with exceptionally uniform composition and thickness and record low macrodefect density on large Si wafers up to 6-in in diameter for the detection of short-wave (SW), mid-wave (MW), and long-wave (LW) IR radiation. We have also proposed a cost-effective approach to use the growth of HgCdTe on low-cost Si substrates to isolate the growth- and substrate-related problems that one occasionally comes across with the CdZnTe substrates and tune the growth parameters such as growth rate, cutoff wavelength ( λ cutoff) and doping parameters before proceeding with the growth on costly large-area CdZnTe substrates. In this way, we demonstrated HgCdTe growth on large CdZnTe substrates of size 7 cm × 7 cm with excellent uniformity and low macrodefect density.

Growth of CdZnTe Crystals for Radiation Detector Applications by Directional Solidification

NASA Technical Reports Server (NTRS)

Su, Ching-Hua

2014-01-01

Advances in Cadmium Zinc Telluride (Cd(sub 1-x)Zn(sub x)Te) growth techniques are needed for the production of large-scale arrays of gamma and x-ray astronomy. The research objective is to develop crystal growth recipes and techniques to obtain large, high quality CdZnTe single crystal with reduced defects, such as charge trapping, twinning, and tellurium precipitates, which degrade the performance of CdZnTe and, at the same time, to increase the yield of usable material from the CdZnTe ingot. A low gravity material experiment, "Crystal Growth of Ternary Compound Semiconductors in Low Gravity Environment", will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). One section of the flight experiment is the melt growth of CdZnTe ternary compounds. This talk will focus on the ground-based studies on the growth of Cd(sub 0.80)Zn(sub 0.20)Te crystals for radiation detector applications by directional solidification. In this investigation, we have improved the properties that are most critical for the detector applications (electrical properties and crystalline quality): a) Electrical resistivity: use high purity starting materials (with reproducible impurity levels) and controlled Cd over pressure during growth to reproducibly balance the impurity levels and Cd vacancy concentration b) Crystalline quality: use ultra-clean growth ampoule (no wetting after growth), optimized thermal profile and ampoule design, as well as a technique for supercool reduction to growth large single crystal with high crystalline quality

Development of High Resolution Mirrors and Cd-Zn-Te Detectors for Hard X-ray Astronomy

NASA Technical Reports Server (NTRS)

Ramsey, Brian D.; Speegle, Chet O.; Gaskin, Jessica; Sharma, Dharma; Engelhaupt, Darell; Six, N. Frank (Technical Monitor)

2002-01-01

We describe the fabrication and implementation of a high-resolution conical, grazing- incidence, hard X-ray (20-70 keV) telescope. When flown aboard stratospheric balloons, these mirrors are used to image cosmic sources such as supernovae, neutron stars, and quasars. The fabrication process involves generating super-polished mandrels, mirror shell electroforming, and mirror testing. The cylindrical mandrels consist of two conical segments; each segment is approximately 305 mm long. These mandrels are first, precision ground to within approx. 1.0 micron straightness along each conical segment and then lapped and polished to less than 0.5 micron straightness. Each mandrel segment is the super-polished to an average surface roughness of approx. 3.25 angstrom rms. By mirror shell replication, this combination of good figure and low surface roughness has enabled us to achieve 15 arcsec, confirmed by X-ray measurements in the Marshall Space Flight Center 102 meter test facility. To image the focused X-rays requires a focal plane detector with appropriate spatial resolution. For 15 arcsec optics of 6 meter focal length, this resolution must be around 200 microns. In addition, the detector must have a high efficiency, relatively high energy resolution, and low background. We are currently developing Cadmium-Zinc-Telluride fine-pixel detectors for this purpose. The detectors under study consist of a 16x16 pixel array with a pixel pitch of 300 microns and are 1 mm and 2 mm thick. At 60 keV, the measured energy resolution is around 2%.

Nuclear Spectroscopic Telescope Array (NuSTAR) Mission

NASA Technical Reports Server (NTRS)

Kim, Yunjin; Willis, Jason; Dodd, Suzanne; Harrison, Fiona; Forster, Karl; Craig, William; Bester, Manfred; Oberg, David

2013-01-01

The Nuclear Spectroscopic Telescope Array (NuSTAR) is a National Aeronautics and Space Administration (NASA) Small Explorer mission that carried the first focusing hard X-ray (6-79 keV) telescope into orbit. It was launched on a Pegasus rocket into a low-inclination Earth orbit on June 13, 2012, from Reagan Test Site, Kwajalein Atoll. NuSTAR will carry out a two-year primary science mission. The NuSTAR observatory is composed of the X-ray instrument and the spacecraft. The NuSTAR spacecraft is three-axis stabilized with a single articulating solar array based on Orbital Sciences Corporation's LEOStar-2 design. The NuSTAR science instrument consists of two co-aligned grazing incidence optics focusing on to two shielded solid state CdZnTe pixel detectors. The instrument was launched in a compact, stowed configuration, and after launch, a 10-meter mast was deployed to achieve a focal length of 10.15 m. The NuSTAR instrument provides sub-arcminute imaging with excellent spectral resolution over a 12-arcminute field of view. The NuSTAR observatory will be operated out of the Mission Operations Center (MOC) at UC Berkeley. Most science targets will be viewed for a week or more. The science data will be transferred from the UC Berkeley MOC to a Science Operations Center (SOC) located at the California Institute of Technology (Caltech). In this paper, we will describe the mission architecture, the technical challenges during the development phase, and the post-launch activities.

Arrays of Position-Sensitive Virtual Frisch-Grid CdZnTe Detectors: Results From a $$4\\times 4$$ Array Prototype

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ocampo Giraldo, L. A.; Bolotnikov, A. E.; Camarda, G. S.

Position-sensitive virtual Frisch-grid (VFG) CdZnTe (CZT) detectors offer a unique capability for correcting the response nonuniformities caused by crystal defects. This allowed us to achieve high energy resolution, while using typical-grade commercial CZT crystals with relaxed requirements to their quality, thus reducing the overall cost of detectors. Another advantage of the VFG detectors is that they can be integrated into arrays and used in small compact hand-held instruments or large-area gamma cameras that will enhance detection capability for many practical applications, including nonproliferation, medical imaging, and gamma-ray astronomy. Here in this paper, we present the results from testing small arraymore » prototypes coupled with front-end application-specified integrated circuit. Each detector in the array is furnished with 5-mm-wide charge-sensing pads placed near the anode. The pads signals are converted into XY coordinates, which combined with the cathode signals (for Z coordinates) provide 3-D position information of all interaction points. The basic array consists of a number of detectors grouped into 2×2 subarrays, each having a common cathode made by connecting together the cathodes of the individual detectors. Lastly, these features can significantly improve the performance of detectors while using typical-grade low-cost CZT crystals to reduce the overall cost of the proposed instrument.« less

Arrays of Position-Sensitive Virtual Frisch-Grid CdZnTe Detectors: Results From a $$4\\times 4$$ Array Prototype

DOE PAGES

Ocampo Giraldo, L. A.; Bolotnikov, A. E.; Camarda, G. S.; ...

2017-08-22

Position-sensitive virtual Frisch-grid (VFG) CdZnTe (CZT) detectors offer a unique capability for correcting the response nonuniformities caused by crystal defects. This allowed us to achieve high energy resolution, while using typical-grade commercial CZT crystals with relaxed requirements to their quality, thus reducing the overall cost of detectors. Another advantage of the VFG detectors is that they can be integrated into arrays and used in small compact hand-held instruments or large-area gamma cameras that will enhance detection capability for many practical applications, including nonproliferation, medical imaging, and gamma-ray astronomy. Here in this paper, we present the results from testing small arraymore » prototypes coupled with front-end application-specified integrated circuit. Each detector in the array is furnished with 5-mm-wide charge-sensing pads placed near the anode. The pads signals are converted into XY coordinates, which combined with the cathode signals (for Z coordinates) provide 3-D position information of all interaction points. The basic array consists of a number of detectors grouped into 2×2 subarrays, each having a common cathode made by connecting together the cathodes of the individual detectors. Lastly, these features can significantly improve the performance of detectors while using typical-grade low-cost CZT crystals to reduce the overall cost of the proposed instrument.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kay, Randolph R; Campbell, David V; Shinde, Subhash L

A modular, scalable focal plane array is provided as an array of integrated circuit dice, wherein each die includes a given amount of modular pixel array circuitry. The array of dice effectively multiplies the amount of modular pixel array circuitry to produce a larger pixel array without increasing die size. Desired pixel pitch across the enlarged pixel array is preserved by forming die stacks with each pixel array circuitry die stacked on a separate die that contains the corresponding signal processing circuitry. Techniques for die stack interconnections and die stack placement are implemented to ensure that the desired pixel pitchmore » is preserved across the enlarged pixel array.« less

Image compression technique

DOEpatents

Fu, Chi-Yung; Petrich, Loren I.

1997-01-01

An image is compressed by identifying edge pixels of the image; creating a filled edge array of pixels each of the pixels in the filled edge array which corresponds to an edge pixel having a value equal to the value of a pixel of the image array selected in response to the edge pixel, and each of the pixels in the filled edge array which does not correspond to an edge pixel having a value which is a weighted average of the values of surrounding pixels in the filled edge array which do correspond to edge pixels; and subtracting the filled edge array from the image array to create a difference array. The edge file and the difference array are then separately compressed and transmitted or stored. The original image is later reconstructed by creating a preliminary array in response to the received edge file, and adding the preliminary array to the received difference array. Filling is accomplished by solving Laplace's equation using a multi-grid technique. Contour and difference file coding techniques also are described. The techniques can be used in a method for processing a plurality of images by selecting a respective compression approach for each image, compressing each of the images according to the compression approach selected, and transmitting each of the images as compressed, in correspondence with an indication of the approach selected for the image.

Image compression technique

DOEpatents

Fu, C.Y.; Petrich, L.I.

1997-03-25

An image is compressed by identifying edge pixels of the image; creating a filled edge array of pixels each of the pixels in the filled edge array which corresponds to an edge pixel having a value equal to the value of a pixel of the image array selected in response to the edge pixel, and each of the pixels in the filled edge array which does not correspond to an edge pixel having a value which is a weighted average of the values of surrounding pixels in the filled edge array which do correspond to edge pixels; and subtracting the filled edge array from the image array to create a difference array. The edge file and the difference array are then separately compressed and transmitted or stored. The original image is later reconstructed by creating a preliminary array in response to the received edge file, and adding the preliminary array to the received difference array. Filling is accomplished by solving Laplace`s equation using a multi-grid technique. Contour and difference file coding techniques also are described. The techniques can be used in a method for processing a plurality of images by selecting a respective compression approach for each image, compressing each of the images according to the compression approach selected, and transmitting each of the images as compressed, in correspondence with an indication of the approach selected for the image. 16 figs.

Achieving subpixel resolution with time-correlated transient signals in pixelated CdZnTe gamma-ray sensors using a focused laser beam (Conference Presentation)

NASA Astrophysics Data System (ADS)

Ocampo Giraldo, Luis A.; Bolotnikov, Aleksey E.; Camarda, Giuseppe S.; Cui, Yonggang; De Geronimo, Gianluigi; Gul, Rubi; Fried, Jack; Hossain, Anwar; Unlu, Kenan; Vernon, Emerson; Yang, Ge; James, Ralph B.

2017-05-01

High-resolution position-sensitive detectors have been proposed to correct response non-uniformities in Cadmium Zinc Telluride (CZT) crystals by virtually subdividing the detectors area into small voxels and equalizing responses from each voxel. 3D pixelated detectors coupled with multichannel readout electronics are the most advanced type of CZT devices offering many options in signal processing and enhancing detector performance. One recent innovation proposed for pixelated detectors is to use the induced (transient) signals from neighboring pixels to achieve high sub-pixel position resolution while keeping large pixel sizes. The main hurdle in achieving this goal is the relatively low signal induced on the neighboring pixels because of the electrostatic shielding effect caused by the collecting pixel. In addition, to achieve high position sensitivity one should rely on time-correlated transient signals, which means that digitized output signals must be used. We present the results of our studies to measure the amplitude of the pixel signals so that these can be used to measure positions of the interaction points. This is done with the processing of digitized correlated time signals measured from several adjacent pixels taking into account rise-time and charge-sharing effects. In these measurements we used a focused pulsed laser to generate a 10-micron beam at one milliwatt (650-nm wavelength) over the detector surface while the collecting pixel was moved in cardinal directions. The results include measurements that present the benefits of combining conventional pixel geometry with digital pulse processing for the best approach in achieving sub-pixel position resolution with the pixel dimensions of approximately 2 mm. We also present the sub-pixel resolution measurements at comparable energies from various gamma emitting isotopes.

The COBRA demonstrator at the LNGS underground laboratory

NASA Astrophysics Data System (ADS)

Ebert, J.; Fritts, M.; Gehre, D.; Gößling, C.; Göpfert, T.; Hagner, C.; Heidrich, N.; Klingenberg, R.; Köttig, T.; Kröninger, K.; Michel, T.; Neddermann, T.; Nitsch, C.; Oldorf, C.; Quante, T.; Rajek, S.; Rebber, H.; Reinecke, O.; Rohatsch, K.; Schulz, O.; Sörensen, A.; Stekl, I.; Tebrügge, J.; Temminghoff, R.; Theinert, R.; Timm, J.; Wester, T.; Wonsak, B.; Zatschler, S.; Zuber, K.

2016-01-01

The COBRA demonstrator, a prototype for a large-scale experiment searching for neutrinoless double beta-decay, was built at the underground laboratory Laboratori Nazionali del Gran Sasso (LNGS) in Italy. It consists of an array of 64 monolithic, calorimetric CdZnTe semiconductor detectors with a coplanar-grid design and a total mass of 380 g. It is used to investigate the experimental challenges faced when operating CdZnTe detectors in low-background mode, to identify potential background sources and to show the long-term stability of the detectors. The first data-taking period started in 2011 with a subset of the detectors, while the demonstrator was completed in November 2013. To date, more than 250 kg d of data have been collected. This paper describes the technical details of the experimental setup and the hardware components.

Blocking contacts for N-type cadmium zinc telluride

NASA Technical Reports Server (NTRS)

Stahle, Carl M. (Inventor); Parker, Bradford H. (Inventor); Babu, Sachidananda R. (Inventor)

2012-01-01

A process for applying blocking contacts on an n-type CdZnTe specimen includes cleaning the CdZnTe specimen; etching the CdZnTe specimen; chemically surface treating the CdZnTe specimen; and depositing blocking metal on at least one of a cathode surface and an anode surface of the CdZnTe specimen.

Mapping Electrical Crosstalk in Pixelated Sensor Arrays

NASA Technical Reports Server (NTRS)

Seshadri, Suresh (Inventor); Cole, David (Inventor); Smith, Roger M. (Inventor); Hancock, Bruce R. (Inventor)

2017-01-01

The effects of inter pixel capacitance in a pixilated array may be measured by first resetting all pixels in the array to a first voltage, where a first image is read out, followed by resetting only a subset of pixels in the array to a second voltage, where a second image is read out, where the difference in the first and second images provide information about the inter pixel capacitance. Other embodiments are described and claimed.

Mapping Electrical Crosstalk in Pixelated Sensor Arrays

NASA Technical Reports Server (NTRS)

Smith, Roger M (Inventor); Hancock, Bruce R. (Inventor); Cole, David (Inventor); Seshadri, Suresh (Inventor)

2013-01-01

The effects of inter pixel capacitance in a pixilated array may be measured by first resetting all pixels in the array to a first voltage, where a first image is read out, followed by resetting only a subset of pixels in the array to a second voltage, where a second image is read out, where the difference in the first and second images provide information about the inter pixel capacitance. Other embodiments are described and claimed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.

Following our successful demonstration of the position-sensitive virtual Frisch-grid detectors, we investigated the feasibility of using high-granularity position sensing to correct response non-uniformities caused by the crystal defects in CdZnTe (CZT) pixelated detectors. The development of high-granularity detectors able to correct response non-uniformities on a scale comparable to the size of electron clouds opens the opportunity of using unselected off-the-shelf CZT material, whilst still assuring high spectral resolution for the majority of the detectors fabricated from an ingot. Here, we present the results from testing 3D position-sensitive 15×15×10 mm 3 pixelated detectors, fabricated with conventional pixel patterns with progressively smallermore » pixel sizes: 1.4, 0.8, and 0.5 mm. We employed the readout system based on the H3D front-end multi-channel ASIC developed by BNL's Instrumentation Division in collaboration with the University of Michigan. We use the sharing of electron clouds among several adjacent pixels to measure locations of interaction points with sub-pixel resolution. By using the detectors with small-pixel sizes and a high probability of the charge-sharing events, we were able to improve their spectral resolutions in comparison to the baseline levels, measured for the 1.4-mm pixel size detectors with small fractions of charge-sharing events. These results demonstrate that further enhancement of the performance of CZT pixelated detectors and reduction of costs are possible by using high spatial-resolution position information of interaction points to correct the small-scale response non-uniformities caused by crystal defects present in most devices.« less

Circuit for high resolution decoding of multi-anode microchannel array detectors

NASA Technical Reports Server (NTRS)

Kasle, David B. (Inventor)

1995-01-01

A circuit for high resolution decoding of multi-anode microchannel array detectors consisting of input registers accepting transient inputs from the anode array; anode encoding logic circuits connected to the input registers; midpoint pipeline registers connected to the anode encoding logic circuits; and pixel decoding logic circuits connected to the midpoint pipeline registers is described. A high resolution algorithm circuit operates in parallel with the pixel decoding logic circuit and computes a high resolution least significant bit to enhance the multianode microchannel array detector's spatial resolution by halving the pixel size and doubling the number of pixels in each axis of the anode array. A multiplexer is connected to the pixel decoding logic circuit and allows a user selectable pixel address output according to the actual multi-anode microchannel array detector anode array size. An output register concatenates the high resolution least significant bit onto the standard ten bit pixel address location to provide an eleven bit pixel address, and also stores the full eleven bit pixel address. A timing and control state machine is connected to the input registers, the anode encoding logic circuits, and the output register for managing the overall operation of the circuit.

Mapping Capacitive Coupling Among Pixels in a Sensor Array

NASA Technical Reports Server (NTRS)

Seshadri, Suresh; Cole, David M.; Smith, Roger M.

2010-01-01

An improved method of mapping the capacitive contribution to cross-talk among pixels in an imaging array of sensors (typically, an imaging photodetector array) has been devised for use in calibrating and/or characterizing such an array. The method involves a sequence of resets of subarrays of pixels to specified voltages and measurement of the voltage responses of neighboring non-reset pixels.

Downsampling Photodetector Array with Windowing

NASA Technical Reports Server (NTRS)

Patawaran, Ferze D.; Farr, William H.; Nguyen, Danh H.; Quirk, Kevin J.; Sahasrabudhe, Adit

2012-01-01

In a photon counting detector array, each pixel in the array produces an electrical pulse when an incident photon on that pixel is detected. Detection and demodulation of an optical communication signal that modulated the intensity of the optical signal requires counting the number of photon arrivals over a given interval. As the size of photon counting photodetector arrays increases, parallel processing of all the pixels exceeds the resources available in current application-specific integrated circuit (ASIC) and gate array (GA) technology; the desire for a high fill factor in avalanche photodiode (APD) detector arrays also precludes this. Through the use of downsampling and windowing portions of the detector array, the processing is distributed between the ASIC and GA. This allows demodulation of the optical communication signal incident on a large photon counting detector array, as well as providing architecture amenable to algorithmic changes. The detector array readout ASIC functions as a parallel-to-serial converter, serializing the photodetector array output for subsequent processing. Additional downsampling functionality for each pixel is added to this ASIC. Due to the large number of pixels in the array, the readout time of the entire photodetector is greater than the time between photon arrivals; therefore, a downsampling pre-processing step is done in order to increase the time allowed for the readout to occur. Each pixel drives a small counter that is incremented at every detected photon arrival or, equivalently, the charge in a storage capacitor is incremented. At the end of a user-configurable counting period (calculated independently from the ASIC), the counters are sampled and cleared. This downsampled photon count information is then sent one counter word at a time to the GA. For a large array, processing even the downsampled pixel counts exceeds the capabilities of the GA. Windowing of the array, whereby several subsets of pixels are designated for processing, is used to further reduce the computational requirements. The grouping of the designated pixel frame as the photon count information is sent one word at a time to the GA, the aggregation of the pixels in a window can be achieved by selecting only the designated pixel counts from the serial stream of photon counts, thereby obviating the need to store the entire frame of pixel count in the gate array. The pixel count se quence from each window can then be processed, forming lower-rate pixel statistics for each window. By having this processing occur in the GA rather than in the ASIC, future changes to the processing algorithm can be readily implemented. The high-bandwidth requirements of a photon counting array combined with the properties of the optical modulation being detected by the array present a unique problem that has not been addressed by current CCD or CMOS sensor array solutions.

Imaging properties of pixellated scintillators with deep pixels

PubMed Central

Barber, H. Bradford; Fastje, David; Lemieux, Daniel; Grim, Gary P.; Furenlid, Lars R.; Miller, Brian W.; Parkhurst, Philip; Nagarkar, Vivek V.

2015-01-01

We have investigated the light-transport properties of scintillator arrays with long, thin pixels (deep pixels) for use in high-energy gamma-ray imaging. We compared 10×10 pixel arrays of YSO:Ce, LYSO:Ce and BGO (1mm × 1mm × 20 mm pixels) made by Proteus, Inc. with similar 10×10 arrays of LSO:Ce and BGO (1mm × 1mm × 15mm pixels) loaned to us by Saint-Gobain. The imaging and spectroscopic behaviors of these scintillator arrays are strongly affected by the choice of a reflector used as an inter-pixel spacer (3M ESR in the case of the Proteus arrays and white, diffuse-reflector for the Saint-Gobain arrays). We have constructed a 3700-pixel LYSO:Ce Prototype NIF Gamma-Ray Imager for use in diagnosing target compression in inertial confinement fusion. This system was tested at the OMEGA Laser and exhibited significant optical, inter-pixel cross-talk that was traced to the use of a single-layer of ESR film as an inter-pixel spacer. We show how the optical cross-talk can be mapped, and discuss correction procedures. We demonstrate a 10×10 YSO:Ce array as part of an iQID (formerly BazookaSPECT) imager and discuss issues related to the internal activity of 176Lu in LSO:Ce and LYSO:Ce detectors. PMID:26236070

Imaging properties of pixellated scintillators with deep pixels

NASA Astrophysics Data System (ADS)

Barber, H. Bradford; Fastje, David; Lemieux, Daniel; Grim, Gary P.; Furenlid, Lars R.; Miller, Brian W.; Parkhurst, Philip; Nagarkar, Vivek V.

2014-09-01

We have investigated the light-transport properties of scintillator arrays with long, thin pixels (deep pixels) for use in high-energy gamma-ray imaging. We compared 10x10 pixel arrays of YSO:Ce, LYSO:Ce and BGO (1mm x 1mm x 20 mm pixels) made by Proteus, Inc. with similar 10x10 arrays of LSO:Ce and BGO (1mm x 1mm x 15mm pixels) loaned to us by Saint-Gobain. The imaging and spectroscopic behaviors of these scintillator arrays are strongly affected by the choice of a reflector used as an inter-pixel spacer (3M ESR in the case of the Proteus arrays and white, diffuse-reflector for the Saint-Gobain arrays). We have constructed a 3700-pixel LYSO:Ce Prototype NIF Gamma-Ray Imager for use in diagnosing target compression in inertial confinement fusion. This system was tested at the OMEGA Laser and exhibited significant optical, inter-pixel cross-talk that was traced to the use of a single-layer of ESR film as an inter-pixel spacer. We show how the optical cross-talk can be mapped, and discuss correction procedures. We demonstrate a 10x10 YSO:Ce array as part of an iQID (formerly BazookaSPECT) imager and discuss issues related to the internal activity of 176Lu in LSO:Ce and LYSO:Ce detectors.

Mercury cadmium telluride infrared detector development in India: status and issues

NASA Astrophysics Data System (ADS)

Singh, R. N.

2009-05-01

In the present paper, we describe the development of Long Wave Infrared (8-12 μm) linear and 2-D IR FPA detectors using HgCdTe for use in thermal imagers and IIR seekers. In this direction, Solid State Physics Laboratory(SSPL) (DRDO) tried to concentrate initially in the bulk growth and characterization of HgCdTe during the early eighties. Some efforts were then made to develop a LWIR photoconductive type MCT array in linear configuration with the IRFPA processed on bulk MCT crystals grown in the laboratory. Non availability of quality epilayers with the required specification followed by the denial of supply of CdTe, CdZnTe and even high purity Te by advanced countries, forced us to shift our efforts during early nineties towards development of 60 element PC IR detectors. High performance linear PC arrays were developed. A novel horizontal casting procedure was evolved for growing high quality bulk material using solid state recrystallization technique. Efforts for ultra purification of Te to 7N purity with the help of a sister concern has made it possible to have this material indigenously. Having succeded in the technology for growing single crystalline CdZnTe with (111) orientation and LPE growth of HgCdTe epilayers on CdZnTe substrates an attempt was made to establish the fabrication of 2D short PV arrays showing significant IR response. Thus a detailed technological knowhow for passivation, metallization, ion implanted junction formation, etc. was generated. Parallel work on the development of a matching CCD Mux readout in silicon by Semiconductor Complex Limited was also completed which was tested first in stand-alone mode followed by integration with IRFPAs through indigenously-developed indium bumps. These devices were integrated into an indigenously fabricated glass dewar cooled by a self-developed JT minicooler. In recent years, the LPE (Liquid Phase Epitaxy) growth from Terich route has been standardized for producing epitaxial layers with high compositional and thickness uniformity leading to a respectable stage of maturity in FPA technology.

Data acquisition system

DOEpatents

Shapiro, Stephen L.; Mani, Sudhindra; Atlas, Eugene L.; Cords, Dieter H. W.; Holbrook, Britt

1997-01-01

A data acquisition circuit for a particle detection system that allows for time tagging of particles detected by the system. The particle detection system screens out background noise and discriminate between hits from scattered and unscattered particles. The detection system can also be adapted to detect a wide variety of particle types. The detection system utilizes a particle detection pixel array, each pixel containing a back-biased PIN diode, and a data acquisition pixel array. Each pixel in the particle detection pixel array is in electrical contact with a pixel in the data acquisition pixel array. In response to a particle hit, the affected PIN diodes generate a current, which is detected by the corresponding data acquisition pixels. This current is integrated to produce a voltage across a capacitor, the voltage being related to the amount of energy deposited in the pixel by the particle. The current is also used to trigger a read of the pixel hit by the particle.

Spatial light modulator array with heat minimization and image enhancement features

DOEpatents

Jain, Kanti [Briarcliff Manor, NY; Sweatt, William C [Albuquerque, NM; Zemel, Marc [New Rochelle, NY

2007-01-30

An enhanced spatial light modulator (ESLM) array, a microelectronics patterning system and a projection display system using such an ESLM for heat-minimization and resolution enhancement during imaging, and the method for fabricating such an ESLM array. The ESLM array includes, in each individual pixel element, a small pixel mirror (reflective region) and a much larger pixel surround. Each pixel surround includes diffraction-grating regions and resolution-enhancement regions. During imaging, a selected pixel mirror reflects a selected-pixel beamlet into the capture angle of a projection lens, while the diffraction grating of the pixel surround redirects heat-producing unused radiation away from the projection lens. The resolution-enhancement regions of selected pixels provide phase shifts that increase effective modulation-transfer function in imaging. All of the non-selected pixel surrounds redirect all radiation energy away from the projection lens. All elements of the ESLM are fabricated by deposition, patterning, etching and other microelectronic process technologies.

Terahertz Array Receivers with Integrated Antennas

NASA Technical Reports Server (NTRS)

Chattopadhyay, Goutam; Llombart, Nuria; Lee, Choonsup; Jung, Cecile; Lin, Robert; Cooper, Ken B.; Reck, Theodore; Siles, Jose; Schlecht, Erich; Peralta, Alessandro;

Pixel electronic noise as a function of position in an active matrix flat panel imaging array

NASA Astrophysics Data System (ADS)

Yazdandoost, Mohammad Y.; Wu, Dali; Karim, Karim S.

2010-04-01

We present an analysis of output referred pixel electronic noise as a function of position in the active matrix array for both active and passive pixel architectures. Three different noise sources for Active Pixel Sensor (APS) arrays are considered: readout period noise, reset period noise and leakage current noise of the reset TFT during readout. For the state-of-the-art Passive Pixel Sensor (PPS) array, the readout noise of the TFT switch is considered. Measured noise results are obtained by modeling the array connections with RC ladders on a small in-house fabricated prototype. The results indicate that the pixels in the rows located in the middle part of the array have less random electronic noise at the output of the off-panel charge amplifier compared to the ones in rows at the two edges of the array. These results can help optimize for clearer images as well as help define the region-of-interest with the best signal-to-noise ratio in an active matrix digital flat panel imaging array.

Molecular beam epitaxy grown long wavelength infrared HgCdTe on compliant Si substrates

NASA Astrophysics Data System (ADS)

Wijewarnasuriya, Priyalal S.; Chen, Yuanping; Brill, Gregory; Dhar, Nibir K.; Carmody, Michael; Bailey, Robert; Arias, Jose

2006-05-01

At the Army Research Laboratory (ARL), a new ternary semiconductor system CdSe xTe 1-x/Si(211) is being investigated as an alternative substrate to bulk-grown CdZnTe substrates for HgCdTe growth by molecular beam epitaxy. Under optimized conditions, best layers show surface defect density less than 400 cm -2 and full width at half maximum of X-ray double crystal rocking curve as low as 100 arc-sec with excellent uniformity over 3 inch area. LW-HgCdTe layers on these compliant substrates exhibit comparable electrical properties to those grown on bulk CZT substrates. Photovoltaic devices fabricated on these LWIR material shows diffusion limited performance at 78K indicating high quality material. Measured R °A at 78K on λ co = 10 μm material is on the order of 340 Ω-cm II. In addition to single devices, we have fabricated 256x256 2-D arrays with 40 μm pixel pitch on LW-HgCdTe grown on Si compliant substrates. Data shows excellent QE operability of 99% at 78K under a tactical background flux of 6.7x10 15 ph/cm2sec. Most probable dark current at the peak distribution is 5.5 x 10 9 e-/sec and is very much consistent with the measured R °A values from single devices. Initial results indicate NETD of 33 mK for a cut-off wavelength of 10 μm with 40 micron pixels size. This work demonstrates CdSe xTe 1-x/Si(211) substrates provides a potential road map to more affordable, robust 3 rd generation FPAs.

ASIC Readout Circuit Architecture for Large Geiger Photodiode Arrays

NASA Technical Reports Server (NTRS)

Vasile, Stefan; Lipson, Jerold

2012-01-01

The objective of this work was to develop a new class of readout integrated circuit (ROIC) arrays to be operated with Geiger avalanche photodiode (GPD) arrays, by integrating multiple functions at the pixel level (smart-pixel or active pixel technology) in 250-nm CMOS (complementary metal oxide semiconductor) processes. In order to pack a maximum of functions within a minimum pixel size, the ROIC array is a full, custom application-specific integrated circuit (ASIC) design using a mixed-signal CMOS process with compact primitive layout cells. The ROIC array was processed to allow assembly in bump-bonding technology with photon-counting infrared detector arrays into 3-D imaging cameras (LADAR). The ROIC architecture was designed to work with either common- anode Si GPD arrays or common-cathode InGaAs GPD arrays. The current ROIC pixel design is hardwired prior to processing one of the two GPD array configurations, and it has the provision to allow soft reconfiguration to either array (to be implemented into the next ROIC array generation). The ROIC pixel architecture implements the Geiger avalanche quenching, bias, reset, and time to digital conversion (TDC) functions in full-digital design, and uses time domain over-sampling (vernier) to allow high temporal resolution at low clock rates, increased data yield, and improved utilization of the laser beam.

Junction-side illuminated silicon detector arrays

DOEpatents

Iwanczyk, Jan S.; Patt, Bradley E.; Tull, Carolyn

2004-03-30

A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.

New Optimizations of Microcalorimeter Arrays for High-Resolution Imaging X-ray Spectroscopy

NASA Astrophysics Data System (ADS)

Kilbourne, Caroline

We propose to continue our successful research program in developing arrays of superconducting transition-edge sensors (TES) for x-ray astrophysics. Our standard 0.3 mm TES pixel achieves better than 2.5-eV resolution, and we now make 32x32 arrays of such pixels. We have also achieved better than 1-eV resolution in smaller pixels, and promising performance in a range of position-sensitive designs. We propose to continue to advance the designs of both the single-pixel and position-sensitive microcalorimeters so that we can produce arrays suitable for several x-ray spectroscopy observatories presently in formulation. We will also investigate various array and pixel optimizations such as would be needed for large arrays for surveys, large- pixel arrays for diffuse soft x-ray measurements, or sub-arrays of fast pixels optimized for neutron-star burst spectroscopy. In addition, we will develop fabrication processes for integrating sub-arrays with very different pixel designs into a monolithic focal-plane array to simplify the design of the focal-plane assembly and make feasible new detector configurations such as the one currently baselined for AXSIO. Through a series of measurements on test devices, we have improved our understanding of the weak-link physics governing the observed resistive transitions in TES detectors. We propose to build on that work and ultimately use the results to improve the immunity of the detector to environmental magnetic fields, as well as its fundamental performance, in each of the targeted optimizations we are developing.

Dynamically re-configurable CMOS imagers for an active vision system

NASA Technical Reports Server (NTRS)

Yang, Guang (Inventor); Pain, Bedabrata (Inventor)

2005-01-01

A vision system is disclosed. The system includes a pixel array, at least one multi-resolution window operation circuit, and a pixel averaging circuit. The pixel array has an array of pixels configured to receive light signals from an image having at least one tracking target. The multi-resolution window operation circuits are configured to process the image. Each of the multi-resolution window operation circuits processes each tracking target within a particular multi-resolution window. The pixel averaging circuit is configured to sample and average pixels within the particular multi-resolution window.

High density pixel array and laser micro-milling method for fabricating array

NASA Technical Reports Server (NTRS)

McFall, James Earl (Inventor); Wiener-Avnear, Eliezer (Inventor)

2003-01-01

A pixel array device is fabricated by a laser micro-milling method under strict process control conditions. The device has an array of pixels bonded together with an adhesive filling the grooves between adjacent pixels. The array is fabricated by moving a substrate relative to a laser beam of predetermined intensity at a controlled, constant velocity along a predetermined path defining a set of grooves between adjacent pixels so that a predetermined laser flux per unit area is applied to the material, and repeating the movement for a plurality of passes of the laser beam until the grooves are ablated to a desired depth. The substrate is of an ultrasonic transducer material in one example for fabrication of a 2D ultrasonic phase array transducer. A substrate of phosphor material is used to fabricate an X-ray focal plane array detector.

High density pixel array

NASA Technical Reports Server (NTRS)

McFall, James Earl (Inventor); Wiener-Avnear, Eliezer (Inventor)

2004-01-01

A pixel array device is fabricated by a laser micro-milling method under strict process control conditions. The device has an array of pixels bonded together with an adhesive filling the grooves between adjacent pixels. The array is fabricated by moving a substrate relative to a laser beam of predetermined intensity at a controlled, constant velocity along a predetermined path defining a set of grooves between adjacent pixels so that a predetermined laser flux per unit area is applied to the material, and repeating the movement for a plurality of passes of the laser beam until the grooves are ablated to a desired depth. The substrate is of an ultrasonic transducer material in one example for fabrication of a 2D ultrasonic phase array transducer. A substrate of phosphor material is used to fabricate an X-ray focal plane array detector.

Color filter array pattern identification using variance of color difference image

NASA Astrophysics Data System (ADS)

Shin, Hyun Jun; Jeon, Jong Ju; Eom, Il Kyu

2017-07-01

A color filter array is placed on the image sensor of a digital camera to acquire color images. Each pixel uses only one color, since the image sensor can measure only one color per pixel. Therefore, empty pixels are filled using an interpolation process called demosaicing. The original and the interpolated pixels have different statistical characteristics. If the image is modified by manipulation or forgery, the color filter array pattern is altered. This pattern change can be a clue for image forgery detection. However, most forgery detection algorithms have the disadvantage of assuming the color filter array pattern. We present an identification method of the color filter array pattern. Initially, the local mean is eliminated to remove the background effect. Subsequently, the color difference block is constructed to emphasize the difference between the original pixel and the interpolated pixel. The variance measure of the color difference image is proposed as a means of estimating the color filter array configuration. The experimental results show that the proposed method is effective in identifying the color filter array pattern. Compared with conventional methods, our method provides superior performance.

A new 9T global shutter pixel with CDS technique

NASA Astrophysics Data System (ADS)

Liu, Yang; Ma, Cheng; Zhou, Quan; Wang, Xinyang

2015-04-01

Benefiting from motion blur free, Global shutter pixel is very widely used in the design of CMOS image sensors for high speed applications such as motion vision, scientifically inspection, etc. In global shutter sensors, all pixel signal information needs to be stored in the pixel first and then waiting for readout. For higher frame rate, we need very fast operation of the pixel array. There are basically two ways for the in pixel signal storage, one is in charge domain, such as the one shown in [1], this needs complicated process during the pixel fabrication. The other one is in voltage domain, one example is the one in [2], this pixel is based on the 4T PPD technology and normally the driving of the high capacitive transfer gate limits the speed of the array operation. In this paper we report a new 9T global shutter pixel based on 3-T partially pinned photodiode (PPPD) technology. It incorporates three in-pixel storage capacitors allowing for correlated double sampling (CDS) and pipeline operation of the array (pixel exposure during the readout of the array). Only two control pulses are needed for all the pixels at the end of exposure which allows high speed exposure control.

Status of two-color and large format HgCdTe FPA technology at Raytheon Vision Systems

NASA Astrophysics Data System (ADS)

Smith, E. P. G.; Bornfreund, R. E.; Kasai, I.; Pham, L. T.; Patten, E. A.; Peterson, J. M.; Roth, J. A.; Nosho, B. Z.; De Lyon, T. J.; Jensen, J. E.; Bangs, J. W.; Johnson, S. M.; Radford, W. A.

2006-02-01

Raytheon Vision Systems (RVS) is developing two-color and large format single color FPAs fabricated from molecular beam epitaxy (MBE) grown HgCdTe triple layer heterojunction (TLHJ) wafers on CdZnTe substrates and double layer heterojunction (DLHJ) wafers on Si substrates, respectively. MBE material growth development has resulted in scaling TLHJ growth on CdZnTe substrates from 10cm2 to 50cm2, long-wavelength infrared (LWIR) DLHJ growth on 4-inch Si substrates and the first demonstration of mid-wavelength infrared (MWIR) DLHJ growth on 6-inch Si substrates with low defect density (<1000cm -2) and excellent uniformity (composition<0.1%, cut-off wavelength Δcenter-edge<0.1μm). Advanced FPA fabrication techniques such as inductively coupled plasma (ICP) etching are being used to achieve high aspect ratio mesa delineation of individual detector elements with benefits to detector performance. Recent two-color detectors with MWIR and LWIR cut-off wavelengths of 5.5μm and 10.5μm, respectively, exhibit significant improvement in 78K LW performance with >70% quantum efficiency, diffusion limited reverse bias dark currents below 300pA and RA products (zero field-of-view, +150mV bias) in excess of 1×103 Ωcm2. Two-color 20μm unit-cell 1280×720 MWIR/LWIR FPAs with pixel response operability approaching 99% have been produced and high quality simultaneous imaging of the spectral bands has been achieved by mating the FPA to a readout integrated circuit (ROIC) with Time Division Multiplexed Integration (TDMI). Large format mega pixel 20μm unit-cell 2048×2048 and 25μm unit-cell 2560×512 FPAs have been demonstrated using DLHJ HgCdTe growth on Si substrates in the short wavelength infrared (SWIR) and MWIR spectral range. Recent imaging of 30μm unit-cell 256×256 LWIR FPAs with 10.0-10.7μm 78K cut-off wavelength and pixel response operability as high as 99.7% show the potential for extending HgCdTe/Si technology to LWIR wavelengths.

Synthetic aperture radar images with composite azimuth resolution

DOEpatents

Bielek, Timothy P; Bickel, Douglas L

2015-03-31

A synthetic aperture radar (SAR) image is produced by using all phase histories of a set of phase histories to produce a first pixel array having a first azimuth resolution, and using less than all phase histories of the set to produce a second pixel array having a second azimuth resolution that is coarser than the first azimuth resolution. The first and second pixel arrays are combined to produce a third pixel array defining a desired SAR image that shows distinct shadows of moving objects while preserving detail in stationary background clutter.

Dead pixel replacement in LWIR microgrid polarimeters.

PubMed

Ratliff, Bradley M; Tyo, J Scott; Boger, James K; Black, Wiley T; Bowers, David L; Fetrow, Matthew P

2007-06-11

LWIR imaging arrays are often affected by nonresponsive pixels, or "dead pixels." These dead pixels can severely degrade the quality of imagery and often have to be replaced before subsequent image processing and display of the imagery data. For LWIR arrays that are integrated with arrays of micropolarizers, the problem of dead pixels is amplified. Conventional dead pixel replacement (DPR) strategies cannot be employed since neighboring pixels are of different polarizations. In this paper we present two DPR schemes. The first is a modified nearest-neighbor replacement method. The second is a method based on redundancy in the polarization measurements.We find that the redundancy-based DPR scheme provides an order-of-magnitude better performance for typical LWIR polarimetric data.

Design and Performance Testing of a Linear Array of Position-Sensitive Virtual Frisch-Grid CdZnTe Detectors for Uranium Enrichment Measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ocampo, Luis

Abstract— Arrays of position-sensitive virtual Frisch-grid CdZnTe (CZT) detectors with enhanced energy resolution have been proposed for spectroscopy and imaging of gamma-ray sources in different applications. The flexibility of the array design, which can employ CZT crystals with thicknesses up to several centimeters in the direction of electron drift, allows for integration into different kinds of field-portable instruments. These can include small hand-held devices, compact gamma cameras and large field-of-view imaging systems. In this work, we present results for a small linear array of such detectors optimized for the low-energy region, 50-400 keV gamma-rays, which is principally intended for incorporationmore » into hand-held instruments. There are many potential application areas for such instruments, including uranium enrichment measurements, storage monitoring, dosimetry and other safeguards-related tasks that can benefit from compactness and isotope-identification capability. The array described here provides a relatively large area with a minimum number of readout channels, which potentially allows the developers to avoid using an ASIC-based electronic readout by substituting it with hybrid preamplifiers followed by digitizers. The array prototype consists of six (5x5.7x25 mm3) CZT detectors positioned in a line facing the source to achieve a maximum exposure area (~10 cm2). Each detector is furnished with 5 mm-wide charge-sensing pads placed near the anode. The pad signals are converted into X-Y coordinates for each interaction event, which are combined with the cathode signals (for determining the Z coordinates) to give 3D positional information for all interaction points. This information is used to correct the response non-uniformity caused by material inhomogeneity, which therefore allows the usage of standard-grade (unselected) CZT crystals, while achieving high-resolution spectroscopic performance for the instrument. In this presentation we describe the design of the array, the results from detailed laboratory tests, and preliminary results from measurements taken during a field test.« less

Kilopixel X-Ray Microcalorimeter Arrays for Astrophysics: Device Performance and Uniformity

NASA Technical Reports Server (NTRS)

Eckart, M. E.; Adams, J. S.; Bailey, C. N.; Bandler, S. R.; Chervenak, F. M.

2011-01-01

We are developing kilo-pixel arrays of TES microcalorimeters to enable high-resolution X-ray imaging spectrometers for future X-ray observatories and laboratory astrophysics experiments. Our current array design was targeted as a prototype for the X-ray Microcalorimeter Spectrometer proposed for the International X-ray Observatory, which calls for a 40x40-pixel core array of 300 micron devices with 2.5 e V energy resolution (at 6 keV). Here we present device characterization of our 32x32 arrays, including X-ray spectral performance of individual pixels within the array. We present our results in light of the understanding that our Mo/Au TESs act as weak superconducting links, causing the TES critical current (Ic) and transition shape to oscillate with applied magnetic field (B). We show Ic(B) measurements and discuss the uniformity of these measurements across the array, as well as implications regarding the uniformity of device noise and response. In addition, we are working to reduce pixel-to-pixel electrical and thermal crosstalk; we present recent test results from an array that has microstrip wiring and an angle-evaporated Cu backside heatsinking layer, which provides Cu coverage on the four sidewalls of the silicon wells beneath each pixel.

Method of fabrication of display pixels driven by silicon thin film transistors

DOEpatents

Carey, Paul G.; Smith, Patrick M.

1999-01-01

Display pixels driven by silicon thin film transistors are fabricated on plastic substrates for use in active matrix displays, such as flat panel displays. The process for forming the pixels involves a prior method for forming individual silicon thin film transistors on low-temperature plastic substrates. Low-temperature substrates are generally considered as being incapable of withstanding sustained processing temperatures greater than about 200.degree. C. The pixel formation process results in a complete pixel and active matrix pixel array. A pixel (or picture element) in an active matrix display consists of a silicon thin film transistor (TFT) and a large electrode, which may control a liquid crystal light valve, an emissive material (such as a light emitting diode or LED), or some other light emitting or attenuating material. The pixels can be connected in arrays wherein rows of pixels contain common gate electrodes and columns of pixels contain common drain electrodes. The source electrode of each pixel TFT is connected to its pixel electrode, and is electrically isolated from every other circuit element in the pixel array.

Ultrasensitive Kilo-Pixel Imaging Array of Photon Noise-Limited Kinetic Inductance Detectors Over an Octave of Bandwidth for THz Astronomy

NASA Astrophysics Data System (ADS)

Bueno, J.; Murugesan, V.; Karatsu, K.; Thoen, D. J.; Baselmans, J. J. A.

2018-05-01

We present the development of a background-limited kilo-pixel imaging array of ultrawide bandwidth kinetic inductance detectors (KIDs) suitable for space-based THz astronomy applications. The array consists of 989 KIDs, in which the radiation is coupled to each KID via a leaky lens antenna, covering the frequency range between 1.4 and 2.8 THz. The single pixel performance is fully characterised using a representative small array in terms of sensitivity, optical efficiency, beam pattern and frequency response, matching very well its expected performance. The kilo-pixel array is characterised electrically, finding a yield larger than 90% and an averaged noise-equivalent power lower than 3 × 10^{-19} W/Hz^{1/2} . The interaction between the kilo-pixel array and cosmic rays is studied, with an expected dead time lower than 0.6% when operated in an L2 or a similar far-Earth orbit.

Transition-Edge Sensor Pixel Parameter Design of the Microcalorimeter Array for the X-Ray Integral Field Unit on Athena

NASA Technical Reports Server (NTRS)

Smith, S. J.; Adams, J. S.; Bandler, S. R.; Betancourt-Martinez, G. L.; Chervenak, J. A.; Chiao, M. P.; Eckart, M. E.; Finkbeiner, F. M.; Kelley, R. L.; Kilbourne, C. A.;

Transition-edge sensor pixel parameter design of the microcalorimeter array for the x-ray integral field unit on Athena

NASA Astrophysics Data System (ADS)

Smith, S. J.; Adams, J. S.; Bandler, S. R.; Betancourt-Martinez, G. L.; Chervenak, J. A.; Chiao, M. P.; Eckart, M. E.; Finkbeiner, F. M.; Kelley, R. L.; Kilbourne, C. A.; Miniussi, A. R.; Porter, F. S.; Sadleir, J. E.; Sakai, K.; Wakeham, N. A.; Wassell, E. J.; Yoon, W.; Bennett, D. A.; Doriese, W. B.; Fowler, J. W.; Hilton, G. C.; Morgan, K. M.; Pappas, C. G.; Reintsema, C. N.; Swetz, D. S.; Ullom, J. N.; Irwin, K. D.; Akamatsu, H.; Gottardi, L.; den Hartog, R.; Jackson, B. D.; van der Kuur, J.; Barret, D.; Peille, P.

2016-07-01

The focal plane of the X-ray integral field unit (X-IFU) for ESA's Athena X-ray observatory will consist of 4000 transition edge sensor (TES) x-ray microcalorimeters optimized for the energy range of 0.2 to 12 keV. The instrument will provide unprecedented spectral resolution of 2.5 eV at energies of up to 7 keV and will accommodate photon fluxes of 1 mCrab (90 cps) for point source observations. The baseline configuration is a uniform large pixel array (LPA) of 4.28" pixels that is read out using frequency domain multiplexing (FDM). However, an alternative configuration under study incorporates an 18 × 18 small pixel array (SPA) of 2" pixels in the central 36" region. This hybrid array configuration could be designed to accommodate higher fluxes of up to 10 mCrab (900 cps) or alternately for improved spectral performance (< 1.5 eV) at low count-rates. In this paper we report on the TES pixel designs that are being optimized to meet these proposed LPA and SPA configurations. In particular we describe details of how important TES parameters are chosen to meet the specific mission criteria such as energy resolution, count-rate and quantum efficiency, and highlight performance trade-offs between designs. The basis of the pixel parameter selection is discussed in the context of existing TES arrays that are being developed for solar and x-ray astronomy applications. We describe the latest results on DC biased diagnostic arrays as well as large format kilo-pixel arrays and discuss the technical challenges associated with integrating different array types on to a single detector die.

Analysis of Etched CdZnTe Substrates

NASA Astrophysics Data System (ADS)

Benson, J. D.; Bubulac, L. O.; Jaime-Vasquez, M.; Lennon, C. M.; Arias, J. M.; Smith, P. J.; Jacobs, R. N.; Markunas, J. K.; Almeida, L. A.; Stoltz, A.; Wijewarnasuriya, P. S.; Peterson, J.; Reddy, M.; Jones, K.; Johnson, S. M.; Lofgreen, D. D.

2016-09-01

State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surface impurity concentration of Al = 1.7 × 1015 atoms cm-2, Si = 3.7 × 1013 atoms cm-2, Cl = 3.12 × 1015 atoms cm-2, S = 1.7 × 1014 atoms cm-2, P = 1.1 × 1014 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 1.2 × 1014 atoms cm-2, and Cu = 4 × 1012 atoms cm-2 was observed on the as-received CdZnTe wafers. CdZnTe particulates and residual SiO2 polishing grit were observed on the surface of the as-received (112)B CdZnTe substrates. The polishing grit/CdZnTe particulate density on CdZnTe wafers was observed to vary across a 6 cm × 6 cm wafer from ˜4 × 107 cm-2 to 2.5 × 108 cm-2. The surface impurity and damage layer of the (112)B CdZnTe wafers dictate that a molecular beam epitaxy (MBE) preparation etch is required. The contamination for one 4 cm × 4 cm and one 6 cm × 6 cm CdZnTe wafer after a standard MBE Br:methanol preparation etch procedure was also analyzed. A maximum surface impurity concentration of Al = 2.4 × 1015 atoms cm-2, Si = 4.0 × 1013 atoms cm-2, Cl = 7.5 × 1013 atoms cm-2, S = 4.4 × 1013 atoms cm-2, P = 9.8 × 1013 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 2.9 × 1014 atoms cm-2, and Cu = 5.2 × 1012 atoms cm-2 was observed on the MBE preparation-etched CdZnTe wafers. The MBE preparation-etched surface contamination consists of Cd(Zn)Te particles/flakes. No residual SiO2 polishing grit was observed on the (112)B surface.

Realistic full wave modeling of focal plane array pixels

DOE PAGES

Campione, Salvatore; Warne, Larry K.; Jorgenson, Roy E.; ...

2017-11-01

Here, we investigate full-wave simulations of realistic implementations of multifunctional nanoantenna enabled detectors (NEDs). We focus on a 2x2 pixelated array structure that supports two wavelengths of operation. We design each resonating structure independently using full-wave simulations with periodic boundary conditions mimicking the whole infinite array. We then construct a supercell made of a 2x2 pixelated array with periodic boundary conditions mimicking the full NED; in this case, however, each pixel comprises 10-20 antennas per side. In this way, the cross-talk between contiguous pixels is accounted for in our simulations. We observe that, even though there are finite extent effects,more » the pixels work as designed, each responding at the respective wavelength of operation. This allows us to stress that realistic simulations of multifunctional NEDs need to be performed to verify the design functionality by taking into account finite extent and cross-talk effects.« less

The Nuclear Spectroscopic Telescope Array (NuSTAR)

NASA Technical Reports Server (NTRS)

Harrison, Fiona A.; Boggs, Steven; Christensen, Finn; Craig, William; Hailey, Charles; Stern, Daniel; Zhang, William; Angelini, Lorella; An, Hong Jun; Bhalereo, Varun;

Scientific grade CCDs from EG & G Reticon

NASA Technical Reports Server (NTRS)

Cizdziel, Philip J.

1990-01-01

The design and performance of three scientific grade CCDs are summarized: a 1200 x 400 astronomical array of 27 x 27 sq micron pixels, a 512 x 512 scientific array of 27 x 27 sq micron pixels and a 404 x 64 VNIR array of 52 x 52 sq micron pixels. Each of the arrays is fabricated using a four phase, double poly, buried n-channel, multi-pinned phase CCD process. Performance data for each sensor is presented.

System and method for generating a deselect mapping for a focal plane array

DOEpatents

Bixler, Jay V; Brandt, Timothy G; Conger, James L; Lawson, Janice K

2013-05-21

A method for generating a deselect mapping for a focal plane array according to one embodiment includes gathering a data set for a focal plane array when exposed to light or radiation from a first known target; analyzing the data set for determining which pixels or subpixels of the focal plane array to add to a deselect mapping; adding the pixels or subpixels to the deselect mapping based on the analysis; and storing the deselect mapping. A method for gathering data using a focal plane array according to another embodiment includes deselecting pixels or subpixels based on a deselect mapping; gathering a data set using pixels or subpixels in a focal plane array that are not deselected upon exposure thereof to light or radiation from a target of interest; and outputting the data set.

Limits in point to point resolution of MOS based pixels detector arrays

NASA Astrophysics Data System (ADS)

Fourches, N.; Desforge, D.; Kebbiri, M.; Kumar, V.; Serruys, Y.; Gutierrez, G.; Leprêtre, F.; Jomard, F.

2018-01-01

In high energy physics point-to-point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron range. Present-day technologies, although not fully implemented in actual detectors, can reach a 5-μm limit, this limit being based on statistical measurements, with a pixel-pitch in the 10 μm range. This paper is devoted to the evaluation of the building blocks for use in pixel arrays enabling accurate tracking of charged particles. Basing us on simulations we will make here a quantitative evaluation of the physical and technological limits in pixel size. Attempts to design small pixels based on SOI technology will be briefly recalled here. A design based on CMOS compatible technologies that allow a reduction of the pixel size below the micrometer is introduced here. Its physical principle relies on a buried carrier-localizing collecting gate. The fabrication process needed by this pixel design can be based on existing process steps used in silicon microelectronics. The pixel characteristics will be discussed as well as the design of pixel arrays. The existing bottlenecks and how to overcome them will be discussed in the light of recent ion implantation and material characterization experiments.

Readout of a 176 pixel FDM system for SAFARI TES arrays

NASA Astrophysics Data System (ADS)

Hijmering, R. A.; den Hartog, R.; Ridder, M.; van der Linden, A. J.; van der Kuur, J.; Gao, J. R.; Jackson, B.

2016-07-01

In this paper we present the results of our 176-pixel prototype of the FDM readout system for SAFARI, a TES-based focal-plane instrument for the far-IR SPICA mission. We have implemented the knowledge obtained from the detailed study on electrical crosstalk reported previously. The effect of carrier leakage is reduced by a factor two, mutual impedance is reduced to below 1 nH and mutual inductance is removed. The pixels are connected in stages, one quarter of the array half of the array and the full array, to resolve intermediate technical issues. A semi-automated procedure was incorporated to find all optimal settings for all pixels. And as a final step the complete array has been connected and 132 pixels have been read out simultaneously within the frequency range of 1-3.8MHz with an average frequency separation of 16kHz. The noise was found to be detector limited and was not affected by reading out all pixels in a FDM mode. With this result the concept of using FDM for multiplexed bolometer read out for the SAFARI instrument has been demonstrated.

Numerical simulation of crosstalk in reduced pitch HgCdTe photon-trapping structure pixel arrays.

PubMed

Schuster, Jonathan; Bellotti, Enrico

2013-06-17

We have investigated crosstalk in HgCdTe photovoltaic pixel arrays employing a photon trapping (PT) structure realized with a periodic array of pillars intended to provide broadband operation. We have found that, compared to non-PT pixel arrays with similar geometry, the array employing the PT structure has a slightly higher optical crosstalk. However, when the total crosstalk is evaluated, the presence of the PT region drastically reduces the total crosstalk; making the use of the PT structure not only useful to obtain broadband operation, but also desirable for reducing crosstalk in small pitch detector arrays.

Performance measurements of hybrid PIN diode arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jernigan, J.G.; Arens, J.F.; Kramer, G.

We report on the successful effort to develop hybrid PIN diode arrays and to demonstrate their potential as components of vertex detectors. Hybrid pixel arrays have been fabricated by the Hughes Aircraft Co. by bump bonding readout chips developed by Hughes to an array of PIN diodes manufactured by Micron Semiconductor Inc. These hybrid pixel arrays were constructed in two configurations. One array format having 10 {times} 64 pixels, each 120 {mu}m square, and the other format having 256 {times} 256 pixels, each 30 {mu}m square. In both cases, the thickness of the PIN diode layer is 300 {mu}m. Measurementsmore » of detector performance show that excellent position resolution can be achieved by interpolation. By determining the centroid of the charge cloud which spreads charge into a number of neighboring pixels, a spatial resolution of a few microns has been attained. The noise has been measured to be about 300 electrons (rms) at room temperature, as expected from KTC and dark current considerations, yielding a signal-to-noise ratio of about 100 for minimum ionizing particles. 4 refs., 13 figs.« less

Evaluation of the MTF for a-Si:H imaging arrays

NASA Astrophysics Data System (ADS)

Yorkston, John; Antonuk, Larry E.; Seraji, N.; Huang, Weidong; Siewerdsen, Jeffrey H.; El-Mohri, Youcef

1994-05-01

Hydrogenated amorphous silicon imaging arrays are being developed for numerous applications in medical imaging. Diagnostic and megavoltage images have previously been reported and a number of the intrinsic properties of the arrays have been investigated. This paper reports on the first attempt to characterize the intrinsic spatial resolution of the imaging pixels on a 450 micrometers pitch, n-i-p imaging array fabricated at Xerox P.A.R.C. The pre- sampled modulation transfer function was measured by scanning a approximately 25 micrometers wide slit of visible wavelength light across a pixel in both the DATA and FET directions. The results show that the response of the pixel in these orthogonal directions is well described by a simple model that accounts for asymmetries in the pixel response due to geometric aspects of the pixel design.

The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zha, Gangqiang; Yang, Jian; Xu, Lingyan

2014-01-28

Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance canmore » be explained using the deep trap model.« less

32 x 16 CMOS smart pixel array for optical interconnects

NASA Astrophysics Data System (ADS)

Kim, Jongwoo; Guilfoyle, Peter S.; Stone, Richard V.; Hessenbruch, John M.; Choquette, Kent D.; Kiamilev, Fouad E.

2000-05-01

Free space optical interconnects can increase throughput capacities and eliminate much of the energy consumption required for `all electronic' systems. High speed optical interconnects can be achieved by integrating optoelectronic devices with conventional electronics. Smart pixel arrays have been developed which use optical interconnects. An individual smart pixel cell is composed of a vertical cavity surface emitting laser (VCSEL), a photodetector, an optical receiver, a laser driver, and digital logic circuitry. Oxide-confined VCSELs are being developed to operate at 850 nm with a threshold current of approximately 1 mA. Multiple quantum well photodetectors are being fabricated from AlGaAs for use with the 850 nm VCSELs. The VCSELs and photodetectors are being integrated with complementary metal oxide semiconductor (CMOS) circuitry using flip-chip bonding. CMOS circuitry is being integrated with a 32 X 16 smart pixel array. The 512 smart pixels are serially linked. Thus, an entire data stream may be clocked through the chip and output electrically by the last pixel. Electrical testing is being performed on the CMOS smart pixel array. Using an on-chip pseudo random number generator, a digital data sequence was cycled through the chip verifying operation of the digital circuitry. Although, the prototype chip was fabricated in 1.2 micrometers technology, simulations have demonstrated that the array can operate at 1 Gb/s per pixel using 0.5 micrometers technology.

Alternative Optimizations of X-ray TES Arrays: Soft X-rays, High Count Rates, and Mixed-Pixel Arrays

NASA Technical Reports Server (NTRS)

Kilbourne, C. A.; Bandler, S. R.; Brown, A.-D.; Chervenak, J. A.; Figueroa-Feliciano, E.; Finkbeiner, F. M.; Iyomoto, N.; Kelley, R. L.; Porter, F. S.; Smith, S. J.

2007-01-01

We are developing arrays of superconducting transition-edge sensors (TES) for imaging spectroscopy telescopes such as the XMS on Constellation-X. While our primary focus has been on arrays that meet the XMS requirements (of which, foremost, is an energy resolution of 2.5 eV at 6 keV and a bandpass from approx. 0.3 keV to 12 keV), we have also investigated other optimizations that might be used to extend the XMS capabilities. In one of these optimizations, improved resolution below 1 keV is achieved by reducing the heat capacity. Such pixels can be based on our XMS-style TES's with the separate absorbers omitted. These pixels can added to an array with broadband response either as a separate array or interspersed, depending on other factors that include telescope design and science requirements. In one version of this approach, we have designed and fabricated a composite array of low-energy and broad-band pixels to provide high spectral resolving power over a broader energy bandpass than could be obtained with a single TES design. The array consists of alternating pixels with and without overhanging absorbers. To explore optimizations for higher count rates, we are also optimizing the design and operating temperature of pixels that are coupled to a solid substrate. We will present the performance of these variations and discuss other optimizations that could be used to enhance the XMS or enable other astrophysics experiments.

High Dynamic Range Pixel Array Detector for Scanning Transmission Electron Microscopy.

PubMed

Tate, Mark W; Purohit, Prafull; Chamberlain, Darol; Nguyen, Kayla X; Hovden, Robert; Chang, Celesta S; Deb, Pratiti; Turgut, Emrah; Heron, John T; Schlom, Darrell G; Ralph, Daniel C; Fuchs, Gregory D; Shanks, Katherine S; Philipp, Hugh T; Muller, David A; Gruner, Sol M

2016-02-01

We describe a hybrid pixel array detector (electron microscope pixel array detector, or EMPAD) adapted for use in electron microscope applications, especially as a universal detector for scanning transmission electron microscopy. The 128×128 pixel detector consists of a 500 µm thick silicon diode array bump-bonded pixel-by-pixel to an application-specific integrated circuit. The in-pixel circuitry provides a 1,000,000:1 dynamic range within a single frame, allowing the direct electron beam to be imaged while still maintaining single electron sensitivity. A 1.1 kHz framing rate enables rapid data collection and minimizes sample drift distortions while scanning. By capturing the entire unsaturated diffraction pattern in scanning mode, one can simultaneously capture bright field, dark field, and phase contrast information, as well as being able to analyze the full scattering distribution, allowing true center of mass imaging. The scattering is recorded on an absolute scale, so that information such as local sample thickness can be directly determined. This paper describes the detector architecture, data acquisition system, and preliminary results from experiments with 80-200 keV electron beams.

Colorization-Based RGB-White Color Interpolation using Color Filter Array with Randomly Sampled Pattern

PubMed Central

Oh, Paul; Lee, Sukho; Kang, Moon Gi

2017-01-01

Recently, several RGB-White (RGBW) color filter arrays (CFAs) have been proposed, which have extra white (W) pixels in the filter array that are highly sensitive. Due to the high sensitivity, the W pixels have better SNR (Signal to Noise Ratio) characteristics than other color pixels in the filter array, especially, in low light conditions. However, most of the RGBW CFAs are designed so that the acquired RGBW pattern image can be converted into the conventional Bayer pattern image, which is then again converted into the final color image by using conventional demosaicing methods, i.e., color interpolation techniques. In this paper, we propose a new RGBW color filter array based on a totally different color interpolation technique, the colorization algorithm. The colorization algorithm was initially proposed for colorizing a gray image into a color image using a small number of color seeds. Here, we adopt this algorithm as a color interpolation technique, so that the RGBW color filter array can be designed with a very large number of W pixels to make the most of the highly sensitive characteristics of the W channel. The resulting RGBW color filter array has a pattern with a large proportion of W pixels, while the small-numbered RGB pixels are randomly distributed over the array. The colorization algorithm makes it possible to reconstruct the colors from such a small number of RGB values. Due to the large proportion of W pixels, the reconstructed color image has a high SNR value, especially higher than those of conventional CFAs in low light condition. Experimental results show that many important information which are not perceived in color images reconstructed with conventional CFAs are perceived in the images reconstructed with the proposed method. PMID:28657602

Colorization-Based RGB-White Color Interpolation using Color Filter Array with Randomly Sampled Pattern.

PubMed

Oh, Paul; Lee, Sukho; Kang, Moon Gi

2017-06-28

Recently, several RGB-White (RGBW) color filter arrays (CFAs) have been proposed, which have extra white (W) pixels in the filter array that are highly sensitive. Due to the high sensitivity, the W pixels have better SNR (Signal to Noise Ratio) characteristics than other color pixels in the filter array, especially, in low light conditions. However, most of the RGBW CFAs are designed so that the acquired RGBW pattern image can be converted into the conventional Bayer pattern image, which is then again converted into the final color image by using conventional demosaicing methods, i.e., color interpolation techniques. In this paper, we propose a new RGBW color filter array based on a totally different color interpolation technique, the colorization algorithm. The colorization algorithm was initially proposed for colorizing a gray image into a color image using a small number of color seeds. Here, we adopt this algorithm as a color interpolation technique, so that the RGBW color filter array can be designed with a very large number of W pixels to make the most of the highly sensitive characteristics of the W channel. The resulting RGBW color filter array has a pattern with a large proportion of W pixels, while the small-numbered RGB pixels are randomly distributed over the array. The colorization algorithm makes it possible to reconstruct the colors from such a small number of RGB values. Due to the large proportion of W pixels, the reconstructed color image has a high SNR value, especially higher than those of conventional CFAs in low light condition. Experimental results show that many important information which are not perceived in color images reconstructed with conventional CFAs are perceived in the images reconstructed with the proposed method.

Kilopixel X-Ray Microcalorimeter Arrays for Astrophysics: Device Performance and Uniformity

NASA Technical Reports Server (NTRS)

Eckart, M. E.; Adams, J. S.; Bailey, C. N.; Bandler, S. R.; Busch, S. E.; Chervenak, J. A.; Finkbeiner, F. M.; Kelley, R. L.; Kilbourne, C. A.; Porter, F. S.;

Infrared sensors for Earth observation missions

NASA Astrophysics Data System (ADS)

Ashcroft, P.; Thorne, P.; Weller, H.; Baker, I.

2007-10-01

SELEX S&AS is developing a family of infrared sensors for earth observation missions. The spectral bands cover shortwave infrared (SWIR) channels from around 1μm to long-wave infrared (LWIR) channels up to 15μm. Our mercury cadmium telluride (MCT) technology has enabled a sensor array design that can satisfy the requirements of all of the SWIR and medium-wave infrared (MWIR) bands with near-identical arrays. This is made possible by the combination of a set of existing technologies that together enable a high degree of flexibility in the pixel geometry, sensitivity, and photocurrent integration capacity. The solution employs a photodiode array under the control of a readout integrated circuit (ROIC). The ROIC allows flexible geometries and in-pixel redundancy to maximise operability and reliability, by combining the photocurrent from a number of photodiodes into a single pixel. Defective or inoperable diodes (or "sub-pixels") can be deselected with tolerable impact on the overall pixel performance. The arrays will be fabricated using the "loophole" process in MCT grown by liquid-phase epitaxy (LPE). These arrays are inherently robust, offer high quantum efficiencies and have been used in previous space programs. The use of loophole arrays also offers access to SELEX's avalanche photodiode (APD) technology, allowing low-noise, highly uniform gain at the pixel level where photon flux is very low.

A Multi-Modality CMOS Sensor Array for Cell-Based Assay and Drug Screening.

PubMed

Chi, Taiyun; Park, Jong Seok; Butts, Jessica C; Hookway, Tracy A; Su, Amy; Zhu, Chengjie; Styczynski, Mark P; McDevitt, Todd C; Wang, Hua

2015-12-01

In this paper, we present a fully integrated multi-modality CMOS cellular sensor array with four sensing modalities to characterize different cell physiological responses, including extracellular voltage recording, cellular impedance mapping, optical detection with shadow imaging and bioluminescence sensing, and thermal monitoring. The sensor array consists of nine parallel pixel groups and nine corresponding signal conditioning blocks. Each pixel group comprises one temperature sensor and 16 tri-modality sensor pixels, while each tri-modality sensor pixel can be independently configured for extracellular voltage recording, cellular impedance measurement (voltage excitation/current sensing), and optical detection. This sensor array supports multi-modality cellular sensing at the pixel level, which enables holistic cell characterization and joint-modality physiological monitoring on the same cellular sample with a pixel resolution of 80 μm × 100 μm. Comprehensive biological experiments with different living cell samples demonstrate the functionality and benefit of the proposed multi-modality sensing in cell-based assay and drug screening.

Nuclear resonant scattering measurements on (57)Fe by multichannel scaling with a 64-pixel silicon avalanche photodiode linear-array detector.

PubMed

Kishimoto, S; Mitsui, T; Haruki, R; Yoda, Y; Taniguchi, T; Shimazaki, S; Ikeno, M; Saito, M; Tanaka, M

2014-11-01

We developed a silicon avalanche photodiode (Si-APD) linear-array detector for use in nuclear resonant scattering experiments using synchrotron X-rays. The Si-APD linear array consists of 64 pixels (pixel size: 100 × 200 μm(2)) with a pixel pitch of 150 μm and depletion depth of 10 μm. An ultrafast frontend circuit allows the X-ray detector to obtain a high output rate of >10(7) cps per pixel. High-performance integrated circuits achieve multichannel scaling over 1024 continuous time bins with a 1 ns resolution for each pixel without dead time. The multichannel scaling method enabled us to record a time spectrum of the 14.4 keV nuclear radiation at each pixel with a time resolution of 1.4 ns (FWHM). This method was successfully applied to nuclear forward scattering and nuclear small-angle scattering on (57)Fe.

Study on the mechanism of using IR illumination to improve the carrier transport performance of CdZnTe detector

NASA Astrophysics Data System (ADS)

Mao, Yifei; Zhang, Jijun; Lin, Liwen; Lai, Jianming; Min, Jiahua; Liang, Xiaoyan; Huang, Jian; Tang, Ke; Wang, Linjun

2018-04-01

Different wavelength IR light (770-1150 nm) was used to evaluate the effect of IR light on the carrier transport performance of CdZnTe detector. The effective mobility-lifetime product (μτ*) of CdZnTe achieved 10-2 cm2 V-1 when the IR wavelength was in the range of 820-920 nm, but decreased to 1 × 10-4 cm2 V-1 when the wavelength was longer than 920 nm. The mechanism about how IR light affecting the carrier transport property of CdZnTe detector was analyzed with Shockley-Read-Hall model. The defect of doubly ionized Cd vacancy ([VCd]2-) was found to be the main factor that assist IR light affecting the μτ of CdZnTe detector. The photoconductive experiment under 770-1150 nm IR illumination was carried out, and three kinds of photocurrent curve were detected and analyzed by solving the Hecht equation. The experiments demonstrated the effect of [VCd]2- defect on the carrier transport property of CdZnTe detector under IR illumination.

Method for fabricating pixelated silicon device cells

DOEpatents

Nielson, Gregory N.; Okandan, Murat; Cruz-Campa, Jose Luis; Nelson, Jeffrey S.; Anderson, Benjamin John

2015-08-18

A method, apparatus and system for flexible, ultra-thin, and high efficiency pixelated silicon or other semiconductor photovoltaic solar cell array fabrication is disclosed. A structure and method of creation for a pixelated silicon or other semiconductor photovoltaic solar cell array with interconnects is described using a manufacturing method that is simplified compared to previous versions of pixelated silicon photovoltaic cells that require more microfabrication steps.

III-V infrared research at the Jet Propulsion Laboratory

NASA Astrophysics Data System (ADS)

Gunapala, S. D.; Ting, D. Z.; Hill, C. J.; Soibel, A.; Liu, John; Liu, J. K.; Mumolo, J. M.; Keo, S. A.; Nguyen, J.; Bandara, S. V.; Tidrow, M. Z.

2009-08-01

Jet Propulsion Laboratory is actively developing the III-V based infrared detector and focal plane arrays (FPAs) for NASA, DoD, and commercial applications. Currently, we are working on multi-band Quantum Well Infrared Photodetectors (QWIPs), Superlattice detectors, and Quantum Dot Infrared Photodetector (QDIPs) technologies suitable for high pixel-pixel uniformity and high pixel operability large area imaging arrays. In this paper we report the first demonstration of the megapixel-simultaneously-readable and pixel-co-registered dual-band QWIP focal plane array (FPA). In addition, we will present the latest advances in QDIPs and Superlattice infrared detectors at the Jet Propulsion Laboratory.

Frequency-multiplexed bias and readout of a 16-pixel superconducting nanowire single-photon detector array

NASA Astrophysics Data System (ADS)

Doerner, S.; Kuzmin, A.; Wuensch, S.; Charaev, I.; Boes, F.; Zwick, T.; Siegel, M.

2017-07-01

We demonstrate a 16-pixel array of microwave-current driven superconducting nanowire single-photon detectors with an integrated and scalable frequency-division multiplexing architecture, which reduces the required number of bias and readout lines to a single microwave feed line. The electrical behavior of the photon-sensitive nanowires, embedded in a resonant circuit, as well as the optical performance and timing jitter of the single detectors is discussed. Besides the single pixel measurements, we also demonstrate the operation of a 16-pixel array with a temporal, spatial, and photon-number resolution.

CdZnTe Background Measurements at Balloon Altitudes with PoRTIA

NASA Technical Reports Server (NTRS)

Parsons, A.; Barthelmy, S.; Bartlett, L.; Gehrels, N.; Naya, J.; Stahle, C. M.; Tueller, J.; Teegarden, B.

2003-01-01

Measurements of the CdZnTe internal background at balloon altitudes are essential to determine which physical processes make the most important background contributions. We present results from CdZnTe background measurements made by PoRTIA, a small CdZnTe balloon instrument that was flown three times in three different shielding configurations. PoRTIA was passively shielded during its first flight from Palestine, Texas and actively shielded as a piggyback instrument on the GRIS balloon experiment during its second and third flights from Alice Springs, Australia, using the thick GRIS Nal anticoincidence shield. A significant CdZnTe background reduction was achieved during the third flight with PoRTIA placed completely inside the GRIS shield and blocking crystal, and thus completely surrounded by 15 cm of Nal. A unique balloon altitude background data set is provided by CdZnTe and Ge detectors simultaneously surrounded by the same thick anticoincidence shield; the presence of a single coxial Ge detector inside the shield next to PoRTIA allowed a measurement of the ambient neutron flux inside the shield throughout the flight. These neutrons interact with the detector material to produce isomeric states of the Cd, Zn and Te nuclei that radiatively decay; calculations are presented that indicate that these decays may explain most of the fully shielded CdZnTe background.

An All Silicon Feedhorn-Coupled Focal Plane for Cosmic Microwave Background Polarimetry

NASA Technical Reports Server (NTRS)

Hubmayr, J.; Appel, J. W.; Austermann, J. E.; Beall, J. A.; Becker, D.; Benson, B. A.; Bleem, L. E.; Carlstrom, J. E.; Chang, C. L.; Cho, H. M.;

IDeF-X ECLAIRs: A CMOS ASIC for the Readout of CdTe and CdZnTe Detectors for High Resolution Spectroscopy

NASA Astrophysics Data System (ADS)

Gevin, Olivier; Baron, Pascal; Coppolani, Xavier; Daly, FranÇois; Delagnes, Eric; Limousin, Olivier; Lugiez, Francis; Meuris, Aline; Pinsard, FrÉdÉric; Renaud, Diana

2009-08-01

The very last member of the IDeF-X ASIC family is presented: IDeF-X ECLAIRs is a 32-channel front end ASIC designed for the readout of Cadmium Telluride (CdTe) and Cadmium Zinc Telluride (CdZnTe) Detectors. Thanks to its noise performance (Equivalent Noise Charge floor of 33 e- rms) and to its radiation hardened design (Single Event Latchup Linear Energy Transfer threshold of 56 MeV.cm2.mg-1), the chip is well suited for soft X-rays energy discrimination and high energy resolution, ldquospace proof,rdquo hard X-ray spectroscopy. We measured an energy low threshold of less than 4 keV with a 10 pF input capacitor and a minimal reachable sensitivity of the Equivalent Noise Charge (ENC) to input capacitance of less than 7 e-/pF obtained with a 6 mus peak time. IDeF-X ECLAIRs will be used for the readout of 6400 CdTe Schottky monopixel detectors of the 2D coded mask imaging telescope ECLAIRs aboard the SVOM satellite. IDeF-X ECLAIRs (or IDeF-X V2) has also been designed for the readout of a pixelated CdTe detector in the miniature spectro-imager prototype Caliste 256 that is currently foreseen for the high energy detector module of the Simbol-X mission.

Optimization of Focusing by Strip and Pixel Arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burke, G J; White, D A; Thompson, C A

Professor Kevin Webb and students at Purdue University have demonstrated the design of conducting strip and pixel arrays for focusing electromagnetic waves [1, 2]. Their key point was to design structures to focus waves in the near field using full wave modeling and optimization methods for design. Their designs included arrays of conducting strips optimized with a downhill search algorithm and arrays of conducting and dielectric pixels optimized with the iterative direct binary search method. They used a finite element code for modeling. This report documents our attempts to duplicate and verify their results. We have modeled 2D conducting stripsmore » and both conducting and dielectric pixel arrays with moment method and FDTD codes to compare with Webb's results. New designs for strip arrays were developed with optimization by the downhill simplex method with simulated annealing. Strip arrays were optimized to focus an incident plane wave at a point or at two separated points and to switch between focusing points with a change in frequency. We also tried putting a line current source at the focus point for the plane wave to see how it would work as a directive antenna. We have not tried optimizing the conducting or dielectric pixel arrays, but modeled the structures designed by Webb with the moment method and FDTD to compare with the Purdue results.« less

High-speed, large-area, p-i-n InGaAs photodiode linear array at 2-micron wavelength

NASA Astrophysics Data System (ADS)

Joshi, Abhay; Datta, Shubhashish

2012-06-01

We present 16-element and 32-element lattice-mismatched InGaAs photodiode arrays having a cut-off wavelength of ~2.2 um. Each 100 um × 200 um large pixel of the 32-element array has a capacitance of 2.5 pF at 5 V reverse bias, thereby allowing a RC-limited bandwidth of ~1.3 GHz. At room temperature, each pixel demonstrates a dark current of 25 uA at 5 V reverse bias. Corresponding results for the 16-element array having 200 um × 200 um pixels are also reported. Cooling the photodiode array to 150K is expected to reduce its dark current to < 50 nA per pixel at 5 V reverse bias. Additionally, measurement results of 2-micron single photodiodes having 16 GHz bandwidth and corresponding PIN-TIA photoreceiver having 6 GHz bandwidth are also reported.

Array Technology for Terahertz Imaging

NASA Technical Reports Server (NTRS)

Reck, Theodore; Siles, Jose; Jung, Cecile; Gill, John; Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, Imran; Cooper, Ken

2012-01-01

Heterodyne terahertz (0.3 - 3THz) imaging systems are currently limited to single or a low number of pixels. Drastic improvements in imaging sensitivity and speed can be achieved by replacing single pixel systems with an array of detectors. This paper presents an array topology that is being developed at the Jet Propulsion Laboratory based on the micromachining of silicon. This technique fabricates the array's package and waveguide components by plasma etching of silicon, resulting in devices with precision surpassing that of current metal machining techniques. Using silicon increases the versatility of the packaging, enabling a variety of orientations of circuitry within the device which increases circuit density and design options. The design of a two-pixel transceiver utilizing a stacked architecture is presented that achieves a pixel spacing of 10mm. By only allowing coupling from the top and bottom of the package the design can readily be arrayed in two dimensions with a spacing of 10mm x 18mm.

1024x1024 Pixel MWIR and LWIR QWIP Focal Plane Arrays and 320x256 MWIR:LWIR Pixel Colocated Simultaneous Dualband QWIP Focal Plane Arrays

NASA Technical Reports Server (NTRS)

Gunapala, Sarath D.; Bandara, Sumith V.; Liu, John K.; Hill, Cory J.; Rafol, S. B.; Mumolo, Jason M.; Trinh, Joseph T.; Tidrow, M. Z.; Le Van, P. D.

2005-01-01

Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024x1024 pixel quantum well infrared photodetector (QWIP) focal planes have been demonstrated with excellent imaging performance. The MWIR QWIP detector array has demonstrated a noise equivalent differential temperature (NE(Delta)T) of 17 mK at a 95K operating temperature with f/2.5 optics at 300K background and the LWIR detector array has demonstrated a NE(Delta)T of 13 mK at a 70K operating temperature with the same optical and background conditions as the MWIR detector array after the subtraction of system noise. Both MWIR and LWIR focal planes have shown background limited performance (BLIP) at 90K and 70K operating-temperatures respectively, with similar optical and background conditions. In addition, we are in the process of developing MWIR and LWIR pixel collocated simultaneously readable dualband QWIP focal plane arrays.

HRTEM Analysis of Crystallographic Defects in CdZnTe Single Crystal

NASA Astrophysics Data System (ADS)

Yasar, Bengisu; Ergunt, Yasin; Kabukcuoglu, Merve Pinar; Parlak, Mehmet; Turan, Rasit; Kalay, Yunus Eren

2018-01-01

In recent years, CdZnTe has attracted much attention due to its superior electrical and structural properties for room-temperature operable gamma and x-ray detectors. However, CdZnTe (CZT) material has often suffered from crystallographic defects encountered during the growth and post-growth processes. The identification and structural characterization of these defects is crucial to synthesize defect-free CdZnTe single crystals. In this study, Cd0.95 Zn0.05 Te single crystals were grown using a three-zone vertical Bridgman system. The single crystallinity of the material was ensured by using x-ray diffraction measurements. High-resolution electron microscopy (HRTEM) was used to characterize the nano-scale defects on the CdZnTe matrix. The linear defects oriented along the ⟨211⟩ direction were examined by transmission electron microscopy (TEM) and the corresponding HRTEM image simulations were performed by using a quantitative scanning TEM simulation package.

Evaluation of ZnO:Al as a contact material to CdZnTe for radiation detector applications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Roy, Utpal N.; Camarda, Giuseppe S.; Cui, Yonggang; Gul, Rubi; Hossain, Anwar; Yang, Ge; James, Ralph B.; Pradhan, Aswini K.; Mundle, Rajeh

2016-09-01

Aluminum (Al) doped ZnO with very high Al concentration acts as metal regarding its electrical conductivity. ZnO offers many advantages over the commonly-known metals being used today as electrode materials for nuclear detector fabrication. Often, the common metals show poor adhesion to CdZnTe or CdTe surfaces and have a tendency to peel off. In addition, there is a large mismatch of the coefficients of thermal expansion (CTE) between the metals and underlying CdZnTe, which is one of the reasons for mechanical degradation of the contact. In contrast ZnO has a close match of the CTE with CdZnTe and possesses 8-20 times higher hardness than the commonly-used metals. In this presentation, we will explore and discuss the properties of CdZnTe detectors with ZnO:Al contacts.

A 400 KHz line rate 2048-pixel stitched SWIR linear array

NASA Astrophysics Data System (ADS)

Anchlia, Ankur; Vinella, Rosa M.; Gielen, Daphne; Wouters, Kristof; Vervenne, Vincent; Hooylaerts, Peter; Deroo, Pieter; Ruythooren, Wouter; De Gaspari, Danny; Das, Jo; Merken, Patrick

2016-05-01

Xenics has developed a family of stitched SWIR long linear arrays that operate up to 400 KHz of line rate. These arrays serve medical and industrial applications that require high line rates as well as space applications that require long linear arrays. The arrays are based on a modular ROIC design concept: modules of 512 pixels are stitched during fabrication to achieve 512, 1024 and 2048 pixel arrays. Each 512-pixel module has its own on-chip digital sequencer, analog readout chain and 4 output buffers. This modular concept enables a long array to run at a high line rates irrespective of the array length, which limits the line rate in a traditional linear array. The ROIC is flip-chipped with InGaAs detector arrays. The FPA has a pixel pitch of 12.5μm and has two pixel flavors: square (12.5μm) and rectangular (250μm). The frontend circuit is based on Capacitive Trans-impedance Amplifier (CTIA) to attain stable detector bias, and good linearity and signal integrity, especially at high speeds. The CTIA has an input auto-zero mechanism that allows to have low detector bias (<20mV). An on-chip Correlated Double Sample (CDS) facilitates removal of CTIA KTC and 1/f noise, and other offsets, achieving low noise performance. There are five gain modes in the FPA giving the full well range from 85Ke- to 40Me-. The measured input referred noise is 35e-rms in the highest gain mode. The FPA operates in Integrate While Read mode and, at a master clock rate of 60MHz and a minimum integration time of 1.4μs, achieves the highest line rate of 400 KHz. In this paper, design details and measurements results are presented in order to demonstrate the array performance.

In-situ device integration of large-area patterned organic nanowire arrays for high-performance optical sensors

PubMed Central

Wu, Yiming; Zhang, Xiujuan; Pan, Huanhuan; Deng, Wei; Zhang, Xiaohong; Zhang, Xiwei; Jie, Jiansheng

2013-01-01

Single-crystalline organic nanowires (NWs) are important building blocks for future low-cost and efficient nano-optoelectronic devices due to their extraordinary properties. However, it remains a critical challenge to achieve large-scale organic NW array assembly and device integration. Herein, we demonstrate a feasible one-step method for large-area patterned growth of cross-aligned single-crystalline organic NW arrays and their in-situ device integration for optical image sensors. The integrated image sensor circuitry contained a 10 × 10 pixel array in an area of 1.3 × 1.3 mm2, showing high spatial resolution, excellent stability and reproducibility. More importantly, 100% of the pixels successfully operated at a high response speed and relatively small pixel-to-pixel variation. The high yield and high spatial resolution of the operational pixels, along with the high integration level of the device, clearly demonstrate the great potential of the one-step organic NW array growth and device construction approach for large-scale optoelectronic device integration. PMID:24287887

Fabrication of close-packed TES microcalorimeter arrays using superconducting molybdenum/gold transition-edge sensors

NASA Astrophysics Data System (ADS)

Finkbeiner, F. M.; Brekosky, R. P.; Chervenak, J. A.; Figueroa-Feliciano, E.; Li, M. J.; Lindeman, M. A.; Stahle, C. K.; Stahle, C. M.; Tralshawala, N.

2002-02-01

We present an overview of our efforts in fabricating Transition-Edge Sensor (TES) microcalorimeter arrays for use in astronomical x-ray spectroscopy. Two distinct types of array schemes are currently pursued: 5×5 single pixel TES array where each pixel is a TES microcalorimeter, and Position-Sensing TES (PoST) array. In the latter, a row of 7 or 15 thermally-linked absorber pixels is read out by two TES at its ends. Both schemes employ superconducting Mo/Au bilayers as the TES. The TES are placed on silicon nitride membranes for thermal isolation from the structural frame. The silicon nitride membranes are prepared by a Deep Reactive Ion Etch (DRIE) process into a silicon wafer. In order to achieve the concept of closely packed arrays without decreasing its structural and functional integrity, we have already developed the technology to fabricate arrays of cantilevered pixel-sized absorbers and slit membranes in silicon nitride films. Furthermore, we have started to investigate ultra-low resistance through-wafer micro-vias to bring the electrical contact out to the back of a wafer. .

Demonstration of 1024x1024 pixel dual-band QWIP focal plane array

NASA Astrophysics Data System (ADS)

Gunapala, S. D.; Bandara, S. V.; Liu, J. K.; Mumolo, J. M.; Ting, D. Z.; Hill, C. J.; Nguyen, J.; Rafol, S. B.

2010-04-01

QWIPs are well known for their stability, high pixel-pixel uniformity and high pixel operability which are quintessential parameters for large area imaging arrays. In this paper we report the first demonstration of the megapixel-simultaneously-readable and pixel-co-registered dual-band QWIP focal plane array (FPA). The dual-band QWIP device was developed by stacking two multi-quantum-well stacks tuned to absorb two different infrared wavelengths. The full width at half maximum (FWHM) of the mid-wave infrared (MWIR) band extends from 4.4 - 5.1 μm and FWHM of the long-wave infrared (LWIR) band extends from 7.8 - 8.8 μm. Dual-band QWIP detector arrays were hybridized with direct injection 30 μm pixel pitch megapixel dual-band simultaneously readable CMOS read out integrated circuits using the indium bump hybridization technique. The initial dual-band megapixel QWIP FPAs were cooled to 68K operating temperature. The preliminary data taken from the first megapixel QWIP FPA has shown system NE▵T of 27 and 40 mK for MWIR and LWIR bands respectively.

Development of Kilo-Pixel Arrays of Transition-Edge Sensors for X-Ray Spectroscopy

NASA Technical Reports Server (NTRS)

Adams, J. S.; Bandler, S. R.; Busch, S. E.; Chervenak, J. A.; Chiao, M. P.; Eckart, M. E.; Ewin, A. J.; Finkbeiner, F. M.; Kelley, R. L.; Kelly, D. P.;

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bolotnikov, A. E., E-mail: bolotnik@bnl.gov; Ackley, K.; Camarda, G. S.

We developed a robust and low-cost array of virtual Frisch-grid CdZnTe detectors coupled to a front-end readout application-specific integrated circuit (ASIC) for spectroscopy and imaging of gamma rays. The array operates as a self-reliant detector module. It is comprised of 36 close-packed 6 × 6 × 15 mm{sup 3} detectors grouped into 3 × 3 sub-arrays of 2 × 2 detectors with the common cathodes. The front-end analog ASIC accommodates up to 36 anode and 9 cathode inputs. Several detector modules can be integrated into a single- or multi-layer unit operating as a Compton or a coded-aperture camera. We presentmore » the results from testing two fully assembled modules and readout electronics. The further enhancement of the arrays’ performance and reduction of their cost are possible by using position-sensitive virtual Frisch-grid detectors, which allow for accurate corrections of the response of material non-uniformities caused by crystal defects.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bolotnikov, A. E.; Ackley, K.; Camarda, G. S.

We developed a robust and low-cost array of virtual Frisch-grid CdZnTe (CZT) detectors coupled to a front-end readout ASIC for spectroscopy and imaging of gamma rays. The array operates as a self-reliant detector module. It is comprised of 36 close-packed 6x6x15 mm 3 detectors grouped into 3x3 sub-arrays of 2x2 detectors with the common cathodes. The front-end analog ASIC accommodates up to 36 anode and 9 cathode inputs. Several detector modules can be integrated into a single- or multi-layer unit operating as a Compton or a coded-aperture camera. We present the results from testing two fully assembled modules and readoutmore » electronics. The further enhancement of the arrays’ performance and reduction of their cost are made possible by using position-sensitive virtual Frisch-grid detectors, which allow for accurate corrections of the response of material non-uniformities caused by crystal defects.« less

Smart-Pixel Array Processors Based on Optimal Cellular Neural Networks for Space Sensor Applications

NASA Technical Reports Server (NTRS)

Fang, Wai-Chi; Sheu, Bing J.; Venus, Holger; Sandau, Rainer

1997-01-01

A smart-pixel cellular neural network (CNN) with hardware annealing capability, digitally programmable synaptic weights, and multisensor parallel interface has been under development for advanced space sensor applications. The smart-pixel CNN architecture is a programmable multi-dimensional array of optoelectronic neurons which are locally connected with their local neurons and associated active-pixel sensors. Integration of the neuroprocessor in each processor node of a scalable multiprocessor system offers orders-of-magnitude computing performance enhancements for on-board real-time intelligent multisensor processing and control tasks of advanced small satellites. The smart-pixel CNN operation theory, architecture, design and implementation, and system applications are investigated in detail. The VLSI (Very Large Scale Integration) implementation feasibility was illustrated by a prototype smart-pixel 5x5 neuroprocessor array chip of active dimensions 1380 micron x 746 micron in a 2-micron CMOS technology.

Gamma ray detector modules

NASA Technical Reports Server (NTRS)

Capote, M. Albert (Inventor); Lenos, Howard A. (Inventor)

2009-01-01

A radiation detector assembly has a semiconductor detector array substrate of CdZnTe or CdTe, having a plurality of detector cell pads on a first surface thereof, the pads having a contact metallization and a solder barrier metallization. An interposer card has planar dimensions no larger than planar dimensions of the semiconductor detector array substrate, a plurality of interconnect pads on a first surface thereof, at least one readout semiconductor chip and at least one connector on a second surface thereof, each having planar dimensions no larger than the planar dimensions of the interposer card. Solder columns extend from contacts on the interposer first surface to the plurality of pads on the semiconductor detector array substrate first surface, the solder columns having at least one solder having a melting point or liquidus less than 120 degrees C. An encapsulant is disposed between the interposer circuit card first surface and the semiconductor detector array substrate first surface, encapsulating the solder columns, the encapsulant curing at a temperature no greater than 120 degrees C.

The charge pump PLL clock generator designed for the 1.56 ns bin size time-to-digital converter pixel array of the Timepix3 readout ASIC

NASA Astrophysics Data System (ADS)

Fu, Y.; Brezina, C.; Desch, K.; Poikela, T.; Llopart, X.; Campbell, M.; Massimiliano, D.; Gromov, V.; Kluit, R.; van Beauzekom, M.; Zappon, F.; Zivkovic, V.

2014-01-01

Timepix3 is a newly developed pixel readout chip which is expected to be operated in a wide range of gaseous and silicon detectors. It is made of 256 × 256 pixels organized in a square pixel-array with 55 μm pitch. Oscillators running at 640 MHz are distributed across the pixel-array and allow for a highly accurate measurement of the arrival time of a hit. This paper concentrates on a low-jitter phase locked loop (PLL) that is located in the chip periphery. This PLL provides a control voltage which regulates the actual frequency of the individual oscillators, allowing for compensation of process, voltage, and temperature variations.

Linear fitting of multi-threshold counting data with a pixel-array detector for spectral X-ray imaging

PubMed Central

Muir, Ryan D.; Pogranichney, Nicholas R.; Muir, J. Lewis; Sullivan, Shane Z.; Battaile, Kevin P.; Mulichak, Anne M.; Toth, Scott J.; Keefe, Lisa J.; Simpson, Garth J.

2014-01-01

Experiments and modeling are described to perform spectral fitting of multi-threshold counting measurements on a pixel-array detector. An analytical model was developed for describing the probability density function of detected voltage in X-ray photon-counting arrays, utilizing fractional photon counting to account for edge/corner effects from voltage plumes that spread across multiple pixels. Each pixel was mathematically calibrated by fitting the detected voltage distributions to the model at both 13.5 keV and 15.0 keV X-ray energies. The model and established pixel responses were then exploited to statistically recover images of X-ray intensity as a function of X-ray energy in a simulated multi-wavelength and multi-counting threshold experiment. PMID:25178010

Linear fitting of multi-threshold counting data with a pixel-array detector for spectral X-ray imaging.

PubMed

Muir, Ryan D; Pogranichney, Nicholas R; Muir, J Lewis; Sullivan, Shane Z; Battaile, Kevin P; Mulichak, Anne M; Toth, Scott J; Keefe, Lisa J; Simpson, Garth J

2014-09-01

Experiments and modeling are described to perform spectral fitting of multi-threshold counting measurements on a pixel-array detector. An analytical model was developed for describing the probability density function of detected voltage in X-ray photon-counting arrays, utilizing fractional photon counting to account for edge/corner effects from voltage plumes that spread across multiple pixels. Each pixel was mathematically calibrated by fitting the detected voltage distributions to the model at both 13.5 keV and 15.0 keV X-ray energies. The model and established pixel responses were then exploited to statistically recover images of X-ray intensity as a function of X-ray energy in a simulated multi-wavelength and multi-counting threshold experiment.

Experimental realization of a metamaterial detector focal plane array.

PubMed

Shrekenhamer, David; Xu, Wangren; Venkatesh, Suresh; Schurig, David; Sonkusale, Sameer; Padilla, Willie J

2012-10-26

We present a metamaterial absorber detector array that enables room-temperature, narrow-band detection of gigahertz (GHz) radiation in the S band (2-4 GHz). The system is implemented in a commercial printed circuit board process and we characterize the detector sensitivity and angular dependence. A modified metamaterial absorber geometry allows for each unit cell to act as an isolated detector pixel and to collectively form a focal plane array . Each pixel can have a dedicated microwave receiver chain and functions together as a hybrid device tuned to maximize the efficiency of detected power. The demonstrated subwavelength pixel shows detected sensitivity of -77 dBm, corresponding to a radiation power density of 27 nW/m(2), with pixel to pixel coupling interference below -14 dB at 2.5 GHz.

GaAs QWIP Array Containing More Than a Million Pixels

NASA Technical Reports Server (NTRS)

Jhabvala, Murzy; Choi, K. K.; Gunapala, Sarath

2005-01-01

A 1,024 x 1,024-pixel array of quantum-well infrared photodetectors (QWIPs) has been built on a 1.8 x 1.8- cm GaAs chip. In tests, the array was found to perform well in detecting images at wavelengths from 8 to 9 m in operation at temperatures between 60 and 70 K. The largest-format QWIP prior array that performed successfully in tests contained 512 x 640 pixels. There is continuing development effort directed toward satisfying actual and anticipated demands to increase numbers of pixels and pixel sizes in order to increase the imaging resolution of infrared photodetector arrays. A 1,024 x 1,024-pixel and even larger formats have been achieved in the InSb and HgCdTe material systems, but photodetector arrays in these material systems are very expensive and manufactured by fewer than half a dozen large companies. In contrast, GaAs-photodetector-array technology is very mature, and photodetectors in the GaAs material system can be readily manufactured by a wide range of industrial technologists, by universities, and government laboratories. There is much similarity between processing in the GaAs industry and processing in the pervasive silicon industry. With respect to yield and cost, the performance of GaAs technology substantially exceeds that of InSb and HgCdTe technologies. In addition, GaAs detectors can be designed to respond to any portion of the wavelength range from 3 to about 16 micrometers - a feature that is very desirable for infrared imaging. GaAs QWIP arrays, like the present one, have potential for use as imaging sensors in infrared measuring instruments, infrared medical imaging systems, and infrared cameras.

Design, optimization and evaluation of a "smart" pixel sensor array for low-dose digital radiography

NASA Astrophysics Data System (ADS)

Wang, Kai; Liu, Xinghui; Ou, Hai; Chen, Jun

2016-04-01

Amorphous silicon (a-Si:H) thin-film transistors (TFTs) have been widely used to build flat-panel X-ray detectors for digital radiography (DR). As the demand for low-dose X-ray imaging grows, a detector with high signal-to-noise-ratio (SNR) pixel architecture emerges. "Smart" pixel is intended to use a dual-gate photosensitive TFT for sensing, storage, and switch. It differs from a conventional passive pixel sensor (PPS) and active pixel sensor (APS) in that all these three functions are combined into one device instead of three separate units in a pixel. Thus, it is expected to have high fill factor and high spatial resolution. In addition, it utilizes the amplification effect of the dual-gate photosensitive TFT to form a one-transistor APS that leads to a potentially high SNR. This paper addresses the design, optimization and evaluation of the smart pixel sensor and array for low-dose DR. We will design and optimize the smart pixel from the scintillator to TFT levels and validate it through optical and electrical simulation and experiments of a 4x4 sensor array.

Smart trigger logic for focal plane arrays

DOEpatents

Levy, James E; Campbell, David V; Holmes, Michael L; Lovejoy, Robert; Wojciechowski, Kenneth; Kay, Randolph R; Cavanaugh, William S; Gurrieri, Thomas M

2014-03-25

An electronic device includes a memory configured to receive data representing light intensity values from pixels in a focal plane array and a processor that analyzes the received data to determine which light values correspond to triggered pixels, where the triggered pixels are those pixels that meet a predefined set of criteria, and determines, for each triggered pixel, a set of neighbor pixels for which light intensity values are to be stored. The electronic device also includes a buffer that temporarily stores light intensity values for at least one previously processed row of pixels, so that when a triggered pixel is identified in a current row, light intensity values for the neighbor pixels in the previously processed row and for the triggered pixel are persistently stored, as well as a data transmitter that transmits the persistently stored light intensity values for the triggered and neighbor pixels to a data receiver.

Self-similar grid patterns in free-space shuffle-exchange networks

NASA Astrophysics Data System (ADS)

Haney, Michael W.

1993-12-01

Self-similar grid patterns are proposed as an alternative to rectangular grid, array optoelectronic sources, and detectors of smart pixels. For shuffle based multistage interconnection networks, it is suggested that smart pixel should not be arrayed on a rectangular grid and that smart pixel unit cell should be the kernel of a self-similar grid pattern.

Method and apparatus for detection of charge on ions and particles

DOEpatents

Fuerstenau, Stephen Douglas; Soli, George Arthur

2002-01-01

The present invention provides a tessellated array detector with charge collecting plate (or cup) electrode pixels and amplifying circuitry integrated into each pixel making it sensitive to external electrostatic charge; a micro collector/amplifier pixel design possessing a small capacitance to ensure a high charge to voltage signal conversion for low noise/high sensitivity operation; a micro-fabricated array of such pixels to create a useful macroscopic target area for ion and charged particle collection.

Numerical simulation of the modulation transfer function (MTF) in infrared focal plane arrays: simulation methodology and MTF optimization

NASA Astrophysics Data System (ADS)

Schuster, J.

2018-02-01

Military requirements demand both single and dual-color infrared (IR) imaging systems with both high resolution and sharp contrast. To quantify the performance of these imaging systems, a key measure of performance, the modulation transfer function (MTF), describes how well an optical system reproduces an objects contrast in the image plane at different spatial frequencies. At the center of an IR imaging system is the focal plane array (FPA). IR FPAs are hybrid structures consisting of a semiconductor detector pixel array, typically fabricated from HgCdTe, InGaAs or III-V superlattice materials, hybridized with heat/pressure to a silicon read-out integrated circuit (ROIC) with indium bumps on each pixel providing the mechanical and electrical connection. Due to the growing sophistication of the pixel arrays in these FPAs, sophisticated modeling techniques are required to predict, understand, and benchmark the pixel array MTF that contributes to the total imaging system MTF. To model the pixel array MTF, computationally exhaustive 2D and 3D numerical simulation approaches are required to correctly account for complex architectures and effects such as lateral diffusion from the pixel corners. It is paramount to accurately model the lateral di_usion (pixel crosstalk) as it can become the dominant mechanism limiting the detector MTF if not properly mitigated. Once the detector MTF has been simulated, it is directly decomposed into its constituent contributions to reveal exactly what is limiting the total detector MTF, providing a path for optimization. An overview of the MTF will be given and the simulation approach will be discussed in detail, along with how different simulation parameters effect the MTF calculation. Finally, MTF optimization strategies (crosstalk mitigation) will be discussed.

Mercuric iodide room-temperature array detectors for gamma-ray imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patt, B.

Significant progress has been made recently in the development of mercuric iodide detector arrays for gamma-ray imaging, making real the possibility of constructing high-performance small, light-weight, portable gamma-ray imaging systems. New techniques have been applied in detector fabrication and then low noise electronics which have produced pixel arrays with high-energy resolution, high spatial resolution, high gamma stopping efficiency. Measurements of the energy resolution capability have been made on a 19-element protypical array. Pixel energy resolutions of 2.98% fwhm and 3.88% fwhm were obtained at 59 keV (241-Am) and 140-keV (99m-Tc), respectively. The pixel spectra for a 14-element section of themore » data is shown together with the composition of the overlapped individual pixel spectra. These techniques are now being applied to fabricate much larger arrays with thousands of pixels. Extension of these principles to imaging scenarios involving gamma-ray energies up to several hundred keV is also possible. This would enable imaging of the 208 keV and 375-414 keV 239-Pu and 240-Pu structures, as well as the 186 keV line of 235-U.« less

High-speed massively parallel scanning

DOEpatents

Decker, Derek E [Byron, CA

2010-07-06

A new technique for recording a series of images of a high-speed event (such as, but not limited to: ballistics, explosives, laser induced changes in materials, etc.) is presented. Such technique(s) makes use of a lenslet array to take image picture elements (pixels) and concentrate light from each pixel into a spot that is much smaller than the pixel. This array of spots illuminates a detector region (e.g., film, as one embodiment) which is scanned transverse to the light, creating tracks of exposed regions. Each track is a time history of the light intensity for a single pixel. By appropriately configuring the array of concentrated spots with respect to the scanning direction of the detection material, different tracks fit between pixels and sufficient lengths are possible which can be of interest in several high-speed imaging applications.

Array-scale performance of TES X-ray Calorimeters Suitable for Constellation-X

NASA Technical Reports Server (NTRS)

Kilbourne, C. A.; Bandler, S. R.; Brown, A. D.; Chervenak, J. A.; Eckart, M. E.; Finkbeiner, F. M.; Iyomoto, N.; Kelley, R. L.; Porter, F. S.; Smith, S. J.;

High throughput reconfigurable data analysis system

NASA Technical Reports Server (NTRS)

Bearman, Greg (Inventor); Pelletier, Michael J. (Inventor); Seshadri, Suresh (Inventor); Pain, Bedabrata (Inventor)

2008-01-01

The present invention relates to a system and method for performing rapid and programmable analysis of data. The present invention relates to a reconfigurable detector comprising at least one array of a plurality of pixels, where each of the plurality of pixels can be selected to receive and read-out an input. The pixel array is divided into at least one pixel group for conducting a common predefined analysis. Each of the pixels has a programmable circuitry programmed with a dynamically configurable user-defined function to modify the input. The present detector also comprises a summing circuit designed to sum the modified input.

A study of response of a LuYAP:Ce array with innovative assembling for PET

NASA Astrophysics Data System (ADS)

Pani, Roberto; Cinti, Maria Nerina; Scafè, Raffaele; Bennati, Paolo; Lo Meo, Sergio; Preziosi, Enrico; Pellegrini, Rosanna; De Vincentis, Giuseppe; Sacco, Donatella; Fabbri, Andrea

2015-09-01

We propose the characterization of a first array of 10×10 Lutetium Yttrium Orthoaluminate Perovskite (LuYAP:Ce) crystals, 2 mm×2 mm×10 mm pixel size, with an innovative assembling designed to enhance light output, uniformity and detection efficiency. The innovation consists of the use of 0.015 mm thick dielectric coating as inter-pixel light-insulators, manufactured by Crytur (Czech Republic) intended to improve crystal insulation and then light collection. Respect to the traditional treatment with 0.2 mm of white epoxy, a thinner pixel gap enhances packing fraction up to 98% with a consequent improvement of detection efficiency. Spectroscopic characterization of the array was performed by a Hamamatsu R6231 photomultiplier tube. A pixel-by-pixel scanning with a collimated 99mTc radioisotope (140 keV photon energy) highlighted a deviation in pulse height close to 3.5% respect to the overall mean value. Meanwhile, in term of energy resolution a difference between the response of single pixel and the array of about 10% was measured. Results were also supported and validated by Monte Carlo simulations performed with GEANT4. Although the dielectric coating pixel insulator cannot overcome the inherent limitations of LuYAP crystal due to its self-absorption of light (still present), this study demonstrated that the new coating treatment allows better light collection (nearly close to the expected one) with in addition a very good uniformity between different pixels. These results confirm the high potentiality of this coating for any other crystal array suited for imaging application and new expectations for the use of LuYAP for PET systems.

A 400 KHz line rate 2048 pixel modular SWIR linear array for earth observation applications

NASA Astrophysics Data System (ADS)

Anchlia, Ankur; Vinella, Rosa M.; Wouters, Kristof; Gielen, Daphne; Hooylaerts, Peter; Deroo, Pieter; Ruythooren, Wouter; van der Zanden, Koen; Vermeiren, Jan; Merken, Patrick

2015-10-01

In this paper, we report about a family of linear imaging FPAs sensitive in the [0.9 - 1.7um] band, developed for high speed applications such as LIDAR, wavelength references and OCT analyzers and also for earth observation applications. Fast linear FPAs can also be used in a wide variety of terrestrial applications, including high speed sorting, electro- and photo-luminesce and medical applications. The arrays are based on a modular ROIC design concept: modules of 512 pixels are stitched during fabrication to achieve 512, 1024 and 2048 pixel arrays. In principle, this concept can be extended to any multiple of 512 pixels, the limiting factor being the pixel yield of long InGaAs arrays and the CTE differences in the hybrid setup. Each 512-pixel module has its own on-chip digital sequencer, analog readout chain and 4 output buffers. This modular concept enables a long-linear array to run at a high line rate of 400 KHz irrespective of the array length, which limits the line rate in a traditional linear array. The pixel has a pitch of 12.5um. The detector frontend is based on CTIA (Capacitor Trans-impedance Amplifier), having 5 selectable integration capacitors giving full well from 62x103e- (gain0) to 40x106e- (gain4). An auto-zero circuit limits the detector bias non-uniformity to 5-10mV across broad intensity levels, limiting the input referred dark signal noise to 20e-rms for Tint=3ms at room temperature. An on-chip CDS that follows the CTIA facilitates removal of Reset/KTC noise, CTIA offsets and most of the 1/f noise. The measured noise of the ROIC is 35e-rms in gain0. At a master clock rate of 60MHz and a minimum integration time of 1.4us, the FPAs reach the highest line rate of 400 KHz.

High-MTF hybrid ferroelectric IRFPA

NASA Astrophysics Data System (ADS)

Evans, Scott B.; Hayden, Terrence

1998-07-01

Low cost, uncooled hybrid infrared focal plane arrays (IRFPA's) are in full-scale production at Raytheon Systems Company (RSC), formerly Texas Instruments Defense Systems and Electronics Group. Detectors consist of reticulated ceramic barium strontium titanate (BST) arrays of 320 X 240 pixels on 48.5 micrometer pitch. The principal performance shortcoming of the hybrid arrays has been low MTF due to thermal crosstalk between pixels. In the past two years, significant improvements have been made to increase MTF making hybrids more competitive in performance with monolithic arrays. The improvements are (1) the reduction of the thickness of the IR absorbing layer electrode that maintains electrical continuity and increases thermal isolation between pixels, (2) reduction of the electrical crosstalk from the ROIC, and (3) development of a process to increase the thermal path-length between pixels called 'elevated optical coat.' This paper describes all three activities and their efficacy. Also discussed is the uncooled IRFPA production capability at RSC.

Fabrication of Transition Edge Sensor Microcalorimeters for X-Ray Focal Planes

NASA Technical Reports Server (NTRS)

Chervenak, James A.; Adams, Joseph S.; Audley, Heather; Bandler, Simon R.; Betancourt-Martinez, Gabriele; Eckart, Megan E.; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline; Lee, Sang Jun;

Design and characterization of high precision in-pixel discriminators for rolling shutter CMOS pixel sensors with full CMOS capability

NASA Astrophysics Data System (ADS)

Fu, Y.; Hu-Guo, C.; Dorokhov, A.; Pham, H.; Hu, Y.

2013-07-01

In order to exploit the ability to integrate a charge collecting electrode with analog and digital processing circuitry down to the pixel level, a new type of CMOS pixel sensors with full CMOS capability is presented in this paper. The pixel array is read out based on a column-parallel read-out architecture, where each pixel incorporates a diode, a preamplifier with a double sampling circuitry and a discriminator to completely eliminate analog read-out bottlenecks. The sensor featuring a pixel array of 8 rows and 32 columns with a pixel pitch of 80 μm×16 μm was fabricated in a 0.18 μm CMOS process. The behavior of each pixel-level discriminator isolated from the diode and the preamplifier was studied. The experimental results indicate that all in-pixel discriminators which are fully operational can provide significant improvements in the read-out speed and the power consumption of CMOS pixel sensors.

X-ray photon correlation spectroscopy using a fast pixel array detector with a grid mask resolution enhancer.

PubMed

Hoshino, Taiki; Kikuchi, Moriya; Murakami, Daiki; Harada, Yoshiko; Mitamura, Koji; Ito, Kiminori; Tanaka, Yoshihito; Sasaki, Sono; Takata, Masaki; Jinnai, Hiroshi; Takahara, Atsushi

2012-11-01

The performance of a fast pixel array detector with a grid mask resolution enhancer has been demonstrated for X-ray photon correlation spectroscopy (XPCS) measurements to investigate fast dynamics on a microscopic scale. A detecting system, in which each pixel of a single-photon-counting pixel array detector, PILATUS, is covered by grid mask apertures, was constructed for XPCS measurements of silica nanoparticles in polymer melts. The experimental results are confirmed to be consistent by comparison with other independent experiments. By applying this method, XPCS measurements can be carried out by customizing the hole size of the grid mask to suit the experimental conditions, such as beam size, detector size and sample-to-detector distance.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Campione, Salvatore; Warne, Larry K.; Jorgenson, Roy E.

Here, we investigate full-wave simulations of realistic implementations of multifunctional nanoantenna enabled detectors (NEDs). We focus on a 2x2 pixelated array structure that supports two wavelengths of operation. We design each resonating structure independently using full-wave simulations with periodic boundary conditions mimicking the whole infinite array. We then construct a supercell made of a 2x2 pixelated array with periodic boundary conditions mimicking the full NED; in this case, however, each pixel comprises 10-20 antennas per side. In this way, the cross-talk between contiguous pixels is accounted for in our simulations. We observe that, even though there are finite extent effects,more » the pixels work as designed, each responding at the respective wavelength of operation. This allows us to stress that realistic simulations of multifunctional NEDs need to be performed to verify the design functionality by taking into account finite extent and cross-talk effects.« less

The CAOS camera platform: ushering in a paradigm change in extreme dynamic range imager design

NASA Astrophysics Data System (ADS)

Riza, Nabeel A.

2017-02-01

Multi-pixel imaging devices such as CCD, CMOS and Focal Plane Array (FPA) photo-sensors dominate the imaging world. These Photo-Detector Array (PDA) devices certainly have their merits including increasingly high pixel counts and shrinking pixel sizes, nevertheless, they are also being hampered by limitations in instantaneous dynamic range, inter-pixel crosstalk, quantum full well capacity, signal-to-noise ratio, sensitivity, spectral flexibility, and in some cases, imager response time. Recently invented is the Coded Access Optical Sensor (CAOS) Camera platform that works in unison with current Photo-Detector Array (PDA) technology to counter fundamental limitations of PDA-based imagers while providing high enough imaging spatial resolution and pixel counts. Using for example the Texas Instruments (TI) Digital Micromirror Device (DMD) to engineer the CAOS camera platform, ushered in is a paradigm change in advanced imager design, particularly for extreme dynamic range applications.

Performance of photovoltaic arrays in-vivo and characteristics of prosthetic vision in animals with retinal degeneration

PubMed Central

Lorach, Henri; Goetz, Georges; Mandel, Yossi; Lei, Xin; Kamins, Theodore I.; Mathieson, Keith; Huie, Philip; Dalal, Roopa; Harris, James S.; Palanker, Daniel

2014-01-01

Summary Loss of photoreceptors during retinal degeneration leads to blindness, but information can be reintroduced into the visual system using electrical stimulation of the remaining retinal neurons. Subretinal photovoltaic arrays convert pulsed illumination into pulsed electric current to stimulate the inner retinal neurons. Since required irradiance exceeds the natural luminance levels, an invisible near-infrared (915nm) light is used to avoid photophobic effects. We characterized the thresholds and dynamic range of cortical responses to prosthetic stimulation with arrays of various pixel sizes and with different number of photodiodes. Stimulation thresholds for devices with 140µm pixels were approximately half those of 70µm pixels, and with both pixel sizes, thresholds were lower with 2 diodes than with 3 diodes per pixel. In all cases these thresholds were more than two orders of magnitude below the ocular safety limit. At high stimulation frequencies (>20Hz), the cortical response exhibited flicker fusion. Over one order of magnitude of dynamic range could be achieved by varying either pulse duration or irradiance. However, contrast sensitivity was very limited. Cortical responses could be detected even with only a few illuminated pixels. Finally, we demonstrate that recording of the corneal electric potential in response to patterned illumination of the subretinal arrays allows monitoring the current produced by each pixel, and thereby assessing the changes in the implant performance over time. PMID:25255990

SU-C-201-03: Coded Aperture Gamma-Ray Imaging Using Pixelated Semiconductor Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joshi, S; Kaye, W; Jaworski, J

2015-06-15

Purpose: Improved localization of gamma-ray emissions from radiotracers is essential to the progress of nuclear medicine. Polaris is a portable, room-temperature operated gamma-ray imaging spectrometer composed of two 3×3 arrays of thick CdZnTe (CZT) detectors, which detect gammas between 30keV and 3MeV with energy resolution of <1% FWHM at 662keV. Compton imaging is used to map out source distributions in 4-pi space; however, is only effective above 300keV where Compton scatter is dominant. This work extends imaging to photoelectric energies (<300keV) using coded aperture imaging (CAI), which is essential for localization of Tc-99m (140keV). Methods: CAI, similar to the pinholemore » camera, relies on an attenuating mask, with open/closed elements, placed between the source and position-sensitive detectors. Partial attenuation of the source results in a “shadow” or count distribution that closely matches a portion of the mask pattern. Ideally, each source direction corresponds to a unique count distribution. Using backprojection reconstruction, the source direction is determined within the field of view. The knowledge of 3D position of interaction results in improved image quality. Results: Using a single array of detectors, a coded aperture mask, and multiple Co-57 (122keV) point sources, image reconstruction is performed in real-time, on an event-by-event basis, resulting in images with an angular resolution of ∼6 degrees. Although material nonuniformities contribute to image degradation, the superposition of images from individual detectors results in improved SNR. CAI was integrated with Compton imaging for a seamless transition between energy regimes. Conclusion: For the first time, CAI has been applied to thick, 3D position sensitive CZT detectors. Real-time, combined CAI and Compton imaging is performed using two 3×3 detector arrays, resulting in a source distribution in space. This system has been commercialized by H3D, Inc. and is being acquired for various applications worldwide, including proton therapy imaging R&D.« less

Investigation to optimize the energy resolution and efficiency of cadmium(zinc)telluride for photon measurements

NASA Astrophysics Data System (ADS)

Kim, Hadong

While the investigations of the Cd(Zn)Te characteristics were completed, a new method to make arbitrary anode shapes, without the troublesome shadow mask technique, was found. With this technique, the two-anode geometry Cd(Zn)Te detector was introduced and tested. The semiconductor performance of the two-anode geometry detectors for the incoming gamma rays of 241Am, 57Co, and 137Cs were compared to the responses of the planar device. The very promising photon energy resolutions of 9.3 and 5.4% FWHM were obtained with the two-anode geometry detector for the gamma rays energies of 122 keV and 662 keV, respectively, while no discernible full energy peaks were apparent with the planar detector. Several simulation programs that are very easy to handle were developed as useful tools for investigating the complicated gamma ray pulse height distributions, which were due to the energy deposition events inside the semiconductors. Comparisons to the known values and with the results from other application programs, validated the information obtained from the simulation programs, which were developed during this research effort. A graphical user interface (GUI) was designed for the user's convenience in order to enter the required input parameters for the specific requirements of each simulation programs. The idealized noise free spectra for the planar detector and for the small pixel geometry detector were successfully obtained by applying Monte Carlo techniques.

Low Power, Room Temperature Systems for the Detection and Identification of Radionuclides from Atmospheric Nuclear Test

DTIC Science & Technology

2013-07-01

3 2.0 TELLURIUM ANTISITES IN CdZnTe ...........................................................................•. 4 3.0 EFFECTS OF...five journals, reported in eleven presentations, and printed in four conference proceedings. 3 2.0 TELLURIUM ANTISITES IN CdZnTe 1. M. Ch~ S...Terterian, D. Ting, R.B. James, J.C. Erickson, R W. Yao, T.T. Lam. M. Szawlowski, and R. Sczeboitz, " Tellurium Antisites in CdZnTe," SPIE Proceedings

Infrared LED Enhanced Spectroscopic CdZnTe Detector Working under High Fluxes of X-rays

PubMed Central

Pekárek, Jakub; Dědič, Václav; Franc, Jan; Belas, Eduard; Rejhon, Martin; Moravec, Pavel; Touš, Jan; Voltr, Josef

2016-01-01

This paper describes an application of infrared light-induced de-polarization applied on a polarized CdZnTe detector working under high radiation fluxes. We newly demonstrate the influence of a high flux of X-rays and simultaneous 1200-nm LED illumination on the spectroscopic properties of a CdZnTe detector. CdZnTe detectors operating under high radiation fluxes usually suffer from the polarization effect, which occurs due to a screening of the internal electric field by a positive space charge caused by photogenerated holes trapped at a deep level. Polarization results in the degradation of detector charge collection efficiency. We studied the spectroscopic behavior of CdZnTe under various X-ray fluxes ranging between 5×105 and 8×106 photons per mm2 per second. It was observed that polarization occurs at an X-ray flux higher than 3×106 mm−2·s−1. Using simultaneous illumination of the detector by a de-polarizing LED at 1200 nm, it was possible to recover X-ray spectra originally deformed by the polarization effect. PMID:27690024

High-speed on-chip windowed centroiding using photodiode-based CMOS imager

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Sun, Chao (Inventor); Yang, Guang (Inventor); Cunningham, Thomas J. (Inventor); Hancock, Bruce (Inventor)

2003-01-01

A centroid computation system is disclosed. The system has an imager array, a switching network, computation elements, and a divider circuit. The imager array has columns and rows of pixels. The switching network is adapted to receive pixel signals from the image array. The plurality of computation elements operates to compute inner products for at least x and y centroids. The plurality of computation elements has only passive elements to provide inner products of pixel signals the switching network. The divider circuit is adapted to receive the inner products and compute the x and y centroids.

High-speed on-chip windowed centroiding using photodiode-based CMOS imager

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Sun, Chao (Inventor); Yang, Guang (Inventor); Cunningham, Thomas J. (Inventor); Hancock, Bruce (Inventor)

2004-01-01

A centroid computation system is disclosed. The system has an imager array, a switching network, computation elements, and a divider circuit. The imager array has columns and rows of pixels. The switching network is adapted to receive pixel signals from the image array. The plurality of computation elements operates to compute inner products for at least x and y centroids. The plurality of computation elements has only passive elements to provide inner products of pixel signals the switching network. The divider circuit is adapted to receive the inner products and compute the x and y centroids.

Selective document image data compression technique

DOEpatents

Fu, C.Y.; Petrich, L.I.

1998-05-19

A method of storing information from filled-in form-documents comprises extracting the unique user information in the foreground from the document form information in the background. The contrast of the pixels is enhanced by a gamma correction on an image array, and then the color value of each of pixel is enhanced. The color pixels lying on edges of an image are converted to black and an adjacent pixel is converted to white. The distance between black pixels and other pixels in the array is determined, and a filled-edge array of pixels is created. User information is then converted to a two-color format by creating a first two-color image of the scanned image by converting all pixels darker than a threshold color value to black. All the pixels that are lighter than the threshold color value to white. Then a second two-color image of the filled-edge file is generated by converting all pixels darker than a second threshold value to black and all pixels lighter than the second threshold color value to white. The first two-color image and the second two-color image are then combined and filtered to smooth the edges of the image. The image may be compressed with a unique Huffman coding table for that image. The image file is also decimated to create a decimated-image file which can later be interpolated back to produce a reconstructed image file using a bilinear interpolation kernel. 10 figs.

A PFM-based MWIR DROIC employing off-pixel fine conversion of photocharge to digital using integrated column ADCs

NASA Astrophysics Data System (ADS)

Abbasi, S.; Galioglu, A.; Shafique, A.; Ceylan, O.; Yazici, M.; Gurbuz, Y.

2017-02-01

A 32x32 prototype of a digital readout IC (DROIC) for medium-wave infrared focal plane arrays (MWIR IR-FPAs) is presented. The DROIC employs in-pixel photocurrent to digital conversion based on a pulse frequency modulation (PFM) loop and boasts a novel feature of off-pixel residue conversion using 10-bit column SAR ADCs. The remaining charge at the end of integration in typical PFM based digital pixel sensors is usually wasted. Previous works employing in-pixel extended counting methods make use of extra memory and counters to convert this left-over charge to digital, thereby performing fine conversion of the incident photocurrent. This results in a low quantization noise and hence keeps the readout noise low. However, focal plane arrays (FPAs) with small pixel pitch are constrained in pixel area, which makes it difficult to benefit from in-pixel extended counting circuitry. Thus, in this work, a novel approach to measure the residue outside the pixel using column -parallel SAR ADCs has been proposed. Moreover, a modified version of the conventional PFM based pixel has been designed to help hold the residue charge and buffer it to the column ADC. In addition to the 2D array of pixels, the prototype consists of 32 SAR ADCs, a timing controller block and a memory block to buffer the residue data coming out of the ADCs. The prototype has been designed and fabricated in 90nm CMOS.

Selective document image data compression technique

DOEpatents

Fu, Chi-Yung; Petrich, Loren I.

1998-01-01

A method of storing information from filled-in form-documents comprises extracting the unique user information in the foreground from the document form information in the background. The contrast of the pixels is enhanced by a gamma correction on an image array, and then the color value of each of pixel is enhanced. The color pixels lying on edges of an image are converted to black and an adjacent pixel is converted to white. The distance between black pixels and other pixels in the array is determined, and a filled-edge array of pixels is created. User information is then converted to a two-color format by creating a first two-color image of the scanned image by converting all pixels darker than a threshold color value to black. All the pixels that are lighter than the threshold color value to white. Then a second two-color image of the filled-edge file is generated by converting all pixels darker than a second threshold value to black and all pixels lighter than the second threshold color value to white. The first two-color image and the second two-color image are then combined and filtered to smooth the edges of the image. The image may be compressed with a unique Huffman coding table for that image. The image file is also decimated to create a decimated-image file which can later be interpolated back to produce a reconstructed image file using a bilinear interpolation kernel.--(235 words)

CdZnTe substrate impurities and their effects on liquid phase epitaxy HgCdTe

NASA Astrophysics Data System (ADS)

Tower, J. P.; Tobin, S. P.; Kestigian, M.; Norton, P. W.; Bollong, A. B.; Schaake, H. F.; Ard, C. K.

1995-05-01

Impurity levels were tracked through the stages of substrate and liquid phase epitaxy (LPE) layer processing to identify sources of elements which degrade infrared photodetector performance. Chemical analysis by glow discharge mass spectrometry and Zeeman corrected graphite furnace atomic absorption effectively showed the levels of impurities introduced into CdZnTe substrate material from the raw materials and the crystal growth processes. A new purification process (in situ distillation zone refining) for raw materials was developed, resulting in improved CdZnTe substrate purity. Substrate copper contamination was found to degrade the LPE layer and device electrical properties, in the case of lightly doped HgCdTe. Anomalous HgCdTe carrier type conversion was correlated to certain CdZnTe and CdTe substrate ingots.

A neighbor pixel communication filtering structure for Dynamic Vision Sensors

NASA Astrophysics Data System (ADS)

Xu, Yuan; Liu, Shiqi; Lu, Hehui; Zhang, Zilong

2017-02-01

For Dynamic Vision Sensors (DVS), thermal noise and junction leakage current induced Background Activity (BA) is the major cause of the deterioration of images quality. Inspired by the smoothing filtering principle of horizontal cells in vertebrate retina, A DVS pixel with Neighbor Pixel Communication (NPC) filtering structure is proposed to solve this issue. The NPC structure is designed to judge the validity of pixel's activity through the communication between its 4 adjacent pixels. The pixel's outputs will be suppressed if its activities are determined not real. The proposed pixel's area is 23.76×24.71μm2 and only 3ns output latency is introduced. In order to validate the effectiveness of the structure, a 5×5 pixel array has been implemented in SMIC 0.13μm CIS process. 3 test cases of array's behavioral model show that the NPC-DVS have an ability of filtering the BA.

Simulation of Small-Pitch HgCdTe Photodetectors

NASA Astrophysics Data System (ADS)

Vallone, Marco; Goano, Michele; Bertazzi, Francesco; Ghione, Giovanni; Schirmacher, Wilhelm; Hanna, Stefan; Figgemeier, Heinrich

2017-09-01

Recent studies indicate as an important technological step the development of infrared HgCdTe-based focal plane arrays (FPAs) with sub-wavelength pixel pitch, with the advantage of smaller volume, lower weight, and potentially lower cost. In order to assess the limits of pixel pitch scaling, we present combined three-dimensional optical and electrical simulations of long-wavelength infrared HgCdTe FPAs, with 3 μm, 5 μm, and 10 μm pitch. Numerical simulations predict significant cavity effects, brought by the array periodicity. The optical and electrical contributions to spectral inter-pixel crosstalk are investigated as functions of pixel pitch, by illuminating the FPAs with Gaussian beams focused on the central pixel. Despite the FPAs being planar with 100% pixel duty cycle, our calculations suggest that the total crosstalk with nearest-neighbor pixels could be kept acceptably small also with pixels only 3 μ m wide and a diffraction-limited optical system.

A novel high electrode count spike recording array using an 81,920 pixel transimpedance amplifier-based imaging chip.

PubMed

Johnson, Lee J; Cohen, Ethan; Ilg, Doug; Klein, Richard; Skeath, Perry; Scribner, Dean A

2012-04-15

Microelectrode recording arrays of 60-100 electrodes are commonly used to record neuronal biopotentials, and these have aided our understanding of brain function, development and pathology. However, higher density microelectrode recording arrays of larger area are needed to study neuronal function over broader brain regions such as in cerebral cortex or hippocampal slices. Here, we present a novel design of a high electrode count picocurrent imaging array (PIA), based on an 81,920 pixel Indigo ISC9809 readout integrated circuit camera chip. While originally developed for interfacing to infrared photodetector arrays, we have adapted the chip for neuron recording by bonding it to microwire glass resulting in an array with an inter-electrode pixel spacing of 30 μm. In a high density electrode array, the ability to selectively record neural regions at high speed and with good signal to noise ratio are both functionally important. A critical feature of our PIA is that each pixel contains a dedicated low noise transimpedance amplifier (∼0.32 pA rms) which allows recording high signal to noise ratio biocurrents comparable to single electrode voltage amplifier recordings. Using selective sampling of 256 pixel subarray regions, we recorded the extracellular biocurrents of rabbit retinal ganglion cell spikes at sampling rates up to 7.2 kHz. Full array local electroretinogram currents could also be recorded at frame rates up to 100 Hz. A PIA with a full complement of 4 readout circuits would span 1cm and could acquire simultaneous data from selected regions of 1024 electrodes at sampling rates up to 9.3 kHz. Published by Elsevier B.V.

High-density arrays of x-ray microcalorimeters for Constellation-X

NASA Astrophysics Data System (ADS)

Kilbourne, C. A.; Bandler, S. R.; Chervenak, J. A.; Figueroa-Feliciano, E.; Finkbeiner, F. M.; Iyomoto, N.; Kelley, R. L.; Porter, F. S.; Saab, T.; Sadleir, J.

2005-12-01

We have been developing x-ray microcalorimeters for the Constellation-X mission. Devices based on superconducting transition edge sensors (TES) have demonstrated the potential to meet the Constellation-X requirements for spectral resolution, speed, and array scale (> 1000 pixels) in a close-packed geometry. In our part of the GSFC/NIST collaboration on this technology development, we have been concentrating on the fabrication of arrays of pixels suitable for the Constellation-X reference configuration. We have fabricated 8x8 arrays with 0.25-mm pixels arranged with 92% fill factor. The pixels are based on Mo/Au TES and Bi/Cu absorbers. We have achieved a resolution of 4.9 eV FWHM at 6 keV in such devices. Studies of the thermal transport in our Bi/Cu absorbers have shown that, while there is room for improvement, for 0.25 mm pixels our existing absorber design is adequate to avoid line-broadening from position dependence caused by thermal diffusion. In order to push closer to the 4-eV requirement and 2-eV goal at 6 keV, we are refining the design of the TES and the interface to the absorber. For the 32x32 arrays ultimately needed for Constellation-X, signal lead routing and heatsinking will drive the design. We have had early successes with experiments in electroplating electrical vias and thermal busses into micro-machined features in silicon substrates. The next steps will be fabricating arrays that have all of the essential features of the required flight design, testing, and then engineering a prototype array for optimum performance.

Fabrication of a Kilopixel Array of Superconducting Microcalorimeters with Microstripline Wiring

NASA Technical Reports Server (NTRS)

Chervenak, James

2012-01-01

A document describes the fabrication of a two-dimensional microcalorimeter array that uses microstrip wiring and integrated heat sinking to enable use of high-performance pixel designs at kilopixel scales (32 X 32). Each pixel is the high-resolution design employed in small-array test devices, which consist of a Mo/Au TES (transition edge sensor) on a silicon nitride membrane and an electroplated Bi/Au absorber. The pixel pitch within the array is 300 microns, where absorbers 290 microns on a side are cantilevered over a silicon support grid with 100-micron-wide beams. The high-density wiring and heat sinking are both carried by the silicon beams to the edge of the array. All pixels are wired out to the array edge. ECR (electron cyclotron resonance) oxide underlayer is deposited underneath the sensor layer. The sensor (TES) layer consists of a superconducting underlayer and a normal metal top layer. If the sensor is deposited at high temperature, the ECR oxide can be vacuum annealed to improve film smoothness and etch characteristics. This process is designed to recover high-resolution, single-pixel x-ray microcalorimeter performance within arrays of arbitrarily large format. The critical current limiting parts of the circuit are designed to have simple interfaces that can be independently verified. The lead-to-TES interface is entirely determined in a single layer that has multiple points of interface to maximize critical current. The lead rails that overlap the TES sensor element contact both the superconducting underlayer and the TES normal metal

Noise characterization of a 512×16 spad line sensor for time-resolved spectroscopy applications

NASA Astrophysics Data System (ADS)

Finlayson, Neil; Usai, Andrea; Erdogan, Ahmet T.; Henderson, Robert K.

2018-02-01

Time-resolved spectroscopy in the presence of noise is challenging. We have developed a new 512 pixel line sensor with 16 single-photon-avalanche (SPAD) detectors per pixel and ultrafast in-pixel time-correlated single photon counting (TCSPC) histogramming for such applications. SPADs are near shot noise limited detectors but we are still faced with the problem of high dark count rate (DCR) SPADs. The noisiest SPADs can be switched off to optimise signal-to-noiseratios (SNR) at the expense of longer acquisition/exposure times than would be possible if more SPADs were exploited. Here we present detailed noise characterization of our array. We build a DCR map for the sensor and demonstrate the effect of switching off the noisiest SPADs in each pixel. 24% percent of SPADs in the array are measured to have DCR in excess of 1kHz, while the best SPAD selection per pixel reduces DCR to 53+/-7Hz across the entire array. We demonstrate that selection of the lowest DCR SPAD in each pixel leads to the emergence of sparse spatial sampling noise in the sensor.

Application of dot-matrix illumination of liquid crystal phase space light modulator in 3D imaging of APD array

NASA Astrophysics Data System (ADS)

Wang, Shuai; Sun, Huayan; Guo, Huichao

2018-01-01

Aiming at the problem of beam scanning in low-resolution APD array in three-dimensional imaging, a method of beam scanning with liquid crystal phase-space optical modulator is proposed to realize high-resolution imaging by low-resolution APD array. First, a liquid crystal phase spatial light modulator is used to generate a beam array and then a beam array is scanned. Since the sub-beam divergence angle in the beam array is smaller than the field angle of a single pixel in the APD array, the APD's pixels respond only to the three-dimensional information of the beam illumination position. Through the scanning of the beam array, a single pixel is used to collect the target three-dimensional information multiple times, thereby improving the resolution of the APD detector. Finally, MATLAB is used to simulate the algorithm in this paper by using two-dimensional scalar diffraction theory, which realizes the splitting and scanning with a resolution of 5 x 5. The feasibility is verified theoretically.

Comparison between Pixelated Scintillators: CsI(Tl), LaCl 3(Ce) and LYSO(Ce) when coupled to a Silicon Photomultipliers Array

NASA Astrophysics Data System (ADS)

Jeong, Manhee; Van, Benjamin; Wells, Byron T.; D'Aries, Lawrence J.; Hammig, Mark D.

2018-06-01

A large area SiPM array is individually coupled to five different types of scintillators in and each is evaluated for the development of a coded aperture imaging system. In order to readout signals from the 144 pixel array, a resistor network with symmetric charge division circuitry was developed, which successfully provides a significant reduction in the multiplicity of the analog outputs and reduces the size of the accumulated data. Energy resolutions at 662 keV for pixelated arrays of dimensions and material types as follows: 3 × 3 × 20 mm3 CsI(Tl), 4 × 4 × 20 mm3 CsI(Tl), 4 × 4 × 5 mm3 LYSO(Ce), 4 × 4 × 10 mm3 LYSO(Ce), and 2 × 2 × 5 mm3 LaCl3(Ce) have been determined. In addition, sub-millimeter FWHM pixel-identification resolutions were acquired from all of the scintillators tested.

In-flight calibration of the Hitomi Soft X-ray Spectrometer. (2) Point spread function

NASA Astrophysics Data System (ADS)

Maeda, Yoshitomo; Sato, Toshiki; Hayashi, Takayuki; Iizuka, Ryo; Angelini, Lorella; Asai, Ryota; Furuzawa, Akihiro; Kelley, Richard; Koyama, Shu; Kurashima, Sho; Ishida, Manabu; Mori, Hideyuki; Nakaniwa, Nozomi; Okajima, Takashi; Serlemitsos, Peter J.; Tsujimoto, Masahiro; Yaqoob, Tahir

2018-03-01

We present results of inflight calibration of the point spread function of the Soft X-ray Telescope that focuses X-rays onto the pixel array of the Soft X-ray Spectrometer system. We make a full array image of a point-like source by extracting a pulsed component of the Crab nebula emission. Within the limited statistics afforded by an exposure time of only 6.9 ks and limited knowledge of the systematic uncertainties, we find that the raytracing model of 1 {^'.} 2 half-power-diameter is consistent with an image of the observed event distributions across pixels. The ratio between the Crab pulsar image and the raytracing shows scatter from pixel to pixel that is 40% or less in all except one pixel. The pixel-to-pixel ratio has a spread of 20%, on average, for the 15 edge pixels, with an averaged statistical error of 17% (1 σ). In the central 16 pixels, the corresponding ratio is 15% with an error of 6%.

Effect of thickness on physical properties of electron beam vacuum evaporated CdZnTe thin films for tandem solar cells

NASA Astrophysics Data System (ADS)

Chander, Subhash; Dhaka, M. S.

2016-10-01

The thickness and physical properties of electron beam vacuum evaporated CdZnTe thin films have been optimized in the present work. The films of thickness 300 nm and 400 nm were deposited on ITO coated glass substrates and subjected to different characterization tools like X-ray diffraction (XRD), UV-Vis spectrophotometer, source meter and scanning electron microscopy (SEM) to investigate the structural, optical, electrical and surface morphological properties respectively. The XRD results show that the as-deposited CdZnTe thin films have zinc blende cubic structure and polycrystalline in nature with preferred orientation (111). Different structural parameters are also evaluated and discussed. The optical study reveals that the optical transition is found to be direct and energy band gap is decreased for higher thickness. The transmittance is found to increase with thickness and red shift observed which is suitable for CdZnTe films as an absorber layer in tandem solar cells. The current-voltage characteristics of deposited films show linear behavior in both forward and reverse directions as well as the conductivity is increased for higher film thickness. The SEM studies show that the as-deposited CdZnTe thin films are found to be homogeneous, uniform, small circle-shaped grains and free from crystal defects. The experimental results confirm that the film thickness plays an important role to optimize the physical properties of CdZnTe thin films for tandem solar cell applications as an absorber layer.

Fabrication of X-ray Microcalorimeter Focal Planes Composed of Two Distinct Pixel Types.

PubMed

Wassell, E J; Adams, J S; Bandler, S R; Betancourt-Martinez, G L; Chiao, M P; Chang, M P; Chervenak, J A; Datesman, A M; Eckart, M E; Ewin, A J; Finkbeiner, F M; Ha, J Y; Kelley, R; Kilbourne, C A; Miniussi, A R; Sakai, K; Porter, F; Sadleir, J E; Smith, S J; Wakeham, N A; Yoon, W

2017-06-01

We are developing superconducting transition-edge sensor (TES) microcalorimeter focal planes for versatility in meeting specifications of X-ray imaging spectrometers including high count-rate, high energy resolution, and large field-of-view. In particular, a focal plane composed of two sub-arrays: one of fine-pitch, high count-rate devices and the other of slower, larger pixels with similar energy resolution, offers promise for the next generation of astrophysics instruments, such as the X-ray Integral Field Unit (X-IFU) instrument on the European Space Agency's Athena mission. We have based the sub-arrays of our current design on successful pixel designs that have been demonstrated separately. Pixels with an all gold X-ray absorber on 50 and 75 micron scales where the Mo/Au TES sits atop a thick metal heatsinking layer have shown high resolution and can accommodate high count-rates. The demonstrated larger pixels use a silicon nitride membrane for thermal isolation, thinner Au and an added bismuth layer in a 250 micron square absorber. To tune the parameters of each sub-array requires merging the fabrication processes of the two detector types. We present the fabrication process for dual production of different X-ray absorbers on the same substrate, thick Au on the small pixels and thinner Au with a Bi capping layer on the larger pixels to tune their heat capacities. The process requires multiple electroplating and etching steps, but the absorbers are defined in a single ion milling step. We demonstrate methods for integrating heatsinking of the two types of pixel into the same focal plane consistent with the requirements for each sub-array, including the limiting of thermal crosstalk. We also discuss fabrication process modifications for tuning the intrinsic transition temperature (T c ) of the bilayers for the different device types through variation of the bilayer thicknesses. The latest results on these "hybrid" arrays will be presented.

Fabrication of X-ray Microcalorimeter Focal Planes Composed of Two Distinct Pixel Types

PubMed Central

Wassell, E. J.; Adams, J. S.; Bandler, S. R.; Betancourt-Martinez, G. L.; Chiao, M. P.; Chang, M. P.; Chervenak, J. A.; Datesman, A. M.; Eckart, M. E.; Ewin, A. J.; Finkbeiner, F. M.; Ha, J. Y.; Kelley, R.; Kilbourne, C. A.; Miniussi, A. R.; Sakai, K.; Porter, F.; Sadleir, J. E.; Smith, S. J.; Wakeham, N. A.; Yoon, W.

2017-01-01

We are developing superconducting transition-edge sensor (TES) microcalorimeter focal planes for versatility in meeting specifications of X-ray imaging spectrometers including high count-rate, high energy resolution, and large field-of-view. In particular, a focal plane composed of two sub-arrays: one of fine-pitch, high count-rate devices and the other of slower, larger pixels with similar energy resolution, offers promise for the next generation of astrophysics instruments, such as the X-ray Integral Field Unit (X-IFU) instrument on the European Space Agency’s Athena mission. We have based the sub-arrays of our current design on successful pixel designs that have been demonstrated separately. Pixels with an all gold X-ray absorber on 50 and 75 micron scales where the Mo/Au TES sits atop a thick metal heatsinking layer have shown high resolution and can accommodate high count-rates. The demonstrated larger pixels use a silicon nitride membrane for thermal isolation, thinner Au and an added bismuth layer in a 250 micron square absorber. To tune the parameters of each sub-array requires merging the fabrication processes of the two detector types. We present the fabrication process for dual production of different X-ray absorbers on the same substrate, thick Au on the small pixels and thinner Au with a Bi capping layer on the larger pixels to tune their heat capacities. The process requires multiple electroplating and etching steps, but the absorbers are defined in a single ion milling step. We demonstrate methods for integrating heatsinking of the two types of pixel into the same focal plane consistent with the requirements for each sub-array, including the limiting of thermal crosstalk. We also discuss fabrication process modifications for tuning the intrinsic transition temperature (Tc) of the bilayers for the different device types through variation of the bilayer thicknesses. The latest results on these “hybrid” arrays will be presented. PMID:28804229

An investigation of signal performance enhancements achieved through innovative pixel design across several generations of indirect detection, active matrix, flat-panel arrays

PubMed Central

Antonuk, Larry E.; Zhao, Qihua; El-Mohri, Youcef; Du, Hong; Wang, Yi; Street, Robert A.; Ho, Jackson; Weisfield, Richard; Yao, William

2009-01-01

Active matrix flat-panel imager (AMFPI) technology is being employed for an increasing variety of imaging applications. An important element in the adoption of this technology has been significant ongoing improvements in optical signal collection achieved through innovations in indirect detection array pixel design. Such improvements have a particularly beneficial effect on performance in applications involving low exposures and∕or high spatial frequencies, where detective quantum efficiency is strongly reduced due to the relatively high level of additive electronic noise compared to signal levels of AMFPI devices. In this article, an examination of various signal properties, as determined through measurements and calculations related to novel array designs, is reported in the context of the evolution of AMFPI pixel design. For these studies, dark, optical, and radiation signal measurements were performed on prototype imagers incorporating a variety of increasingly sophisticated array designs, with pixel pitches ranging from 75 to 127 μm. For each design, detailed measurements of fundamental pixel-level properties conducted under radiographic and fluoroscopic operating conditions are reported and the results are compared. A series of 127 μm pitch arrays employing discrete photodiodes culminated in a novel design providing an optical fill factor of ∼80% (thereby assuring improved x-ray sensitivity), and demonstrating low dark current, very low charge trapping and charge release, and a large range of linear signal response. In two of the designs having 75 and 90 μm pitches, a novel continuous photodiode structure was found to provide fill factors that approach the theoretical maximum of 100%. Both sets of novel designs achieved large fill factors by employing architectures in which some, or all of the photodiode structure was elevated above the plane of the pixel addressing transistor. Generally, enhancement of the fill factor in either discrete or continuous photodiode arrays was observed to result in no degradation in MTF due to charge sharing between pixels. While the continuous designs exhibited relatively high levels of charge trapping and release, as well as shorter ranges of linearity, it is possible that these behaviors can be addressed through further refinements to pixel design. Both the continuous and the most recent discrete photodiode designs accommodate more sophisticated pixel circuitry than is present on conventional AMFPIs – such as a pixel clamp circuit, which is demonstrated to limit signal saturation under conditions corresponding to high exposures. It is anticipated that photodiode structures such as the ones reported in this study will enable the development of even more complex pixel circuitry, such as pixel-level amplifiers, that will lead to further significant improvements in imager performance. PMID:19673228

Laser pixelation of thick scintillators for medical imaging applications: x-ray studies

NASA Astrophysics Data System (ADS)

Sabet, Hamid; Kudrolli, Haris; Marton, Zsolt; Singh, Bipin; Nagarkar, Vivek V.

2013-09-01

To achieve high spatial resolution required in nuclear imaging, scintillation light spread has to be controlled. This has been traditionally achieved by introducing structures in the bulk of scintillation materials; typically by mechanical pixelation of scintillators and fill the resultant inter-pixel gaps by reflecting materials. Mechanical pixelation however, is accompanied by various cost and complexity issues especially for hard, brittle and hygroscopic materials. For example LSO and LYSO, hard and brittle scintillators of interest to medical imaging community, are known to crack under thermal and mechanical stress; the material yield drops quickly with large arrays with high aspect ratio pixels and therefore the pixelation process cost increases. We are utilizing a novel technique named Laser Induced Optical Barriers (LIOB) for pixelation of scintillators that overcomes the issues associated with mechanical pixelation. In this technique, we can introduce optical barriers within the bulk of scintillator crystals to form pixelated arrays with small pixel size and large thickness. We applied LIOB to LYSO using a high-frequency solid-state laser. Arrays with different crystal thickness (5 to 20 mm thick), and pixel size (0.8×0.8 to 1.5×1.5 mm2) were fabricated and tested. The width of the optical barriers were controlled by fine-tuning key parameters such as lens focal spot size and laser energy density. Here we report on LIOB process, its optimization, and the optical crosstalk measurements using X-rays. There are many applications that can potentially benefit from LIOB including but not limited to clinical/pre-clinical PET and SPECT systems, and photon counting CT detectors.

The CHROMA focal plane array: a large-format, low-noise detector optimized for imaging spectroscopy

NASA Astrophysics Data System (ADS)

Demers, Richard T.; Bailey, Robert; Beletic, James W.; Bernd, Steve; Bhargava, Sidharth; Herring, Jason; Kobrin, Paul; Lee, Donald; Pan, Jianmei; Petersen, Anders; Piquette, Eric; Starr, Brian; Yamamoto, Matthew; Zandian, Majid

2013-09-01

The CHROMA (Configurable Hyperspectral Readout for Multiple Applications) is an advanced Focal Plane Array (FPA) designed for visible-infrared imaging spectroscopy. Using Teledyne's latest substrateremoved HgCdTe detector, the CHROMA FPA has very low dark current, low readout noise and high, stable quantum efficiency from the deep blue (390nm) to the cutoff wavelength. CHROMA has a pixel pitch of 30 microns and is available in array formats ranging from 320×480 to 1600×480 pixels. Users generally disperse spectra over the 480 pixel-length columns and image spatially over the n×160 pixellength rows, where n=2, 4, 8, 10. The CHROMA Readout Integrated Circuit (ROIC) has Correlated Double Sampling (CDS) in pixel and generates its own internal bias signals and clocks. This paper presents the measured performance of the CHROMA FPA with 2.5 micron cutoff wavelength including the characterization of noise versus pixel gain, power dissipation and quantum efficiency.

Analysis of Te and TeO 2 on CdZnTe Nuclear Detectors Treated with Hydrogen Bromide and Ammonium-Based Solutions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Drabo, Mebougna L.; Egarievwe, Stephen U.; Okwechime, Ifechukwude O.

Surface defects caused during cutting and polishing in the fabrication of cadmium zinc telluride (CdZnTe) nuclear detectors limit their spectral performance. Chemical treatments are often used to remove surface damages and defects. In this paper, we present the analysis of Te and TeO 2 species on the surfaces of CdZnTe nuclear detectors treated with hydrogen bromide and ammonium-based solutions. The CdZnTe wafers were chemo-mechanically polished in a mixture of hydrogen bromide in hydrogen peroxide and ethylene glycol, followed by a chemical passivation in a mixture of ammonium fluoride and hydrogen peroxide solution. X-ray photoelectron spectroscopy showed significant conversion of Temore » to TeO 2, thus producing a more chemically stable surface. The resistivity of the CdZnTe samples is in the order of 1010 ohms-cm. The current for a given applied voltage increased following the passivation and decreased after a 3-hour period. Results from spectral response measurements showed that the 59.5-keV gamma-peak of Am-241 was stable under the same channel for the surface treatment processes.« less

Progress in the Development of CdZnTe Unipolar Detectors for Different Anode Geometries and Data Corrections

PubMed Central

Zhang, Qiushi; Zhang, Congzhe; Lu, Yanye; Yang, Kun; Ren, Qiushi

2013-01-01

CdZnTe detectors have been under development for the past two decades, providing good stopping power for gamma rays, lightweight camera heads and improved energy resolution. However, the performance of this type of detector is limited primarily by incomplete charge collection problems resulting from charge carriers trapping. This paper is a review of the progress in the development of CdZnTe unipolar detectors with some data correction techniques for improving performance of the detectors. We will first briefly review the relevant theories. Thereafter, two aspects of the techniques for overcoming the hole trapping issue are summarized, including irradiation direction configuration and pulse shape correction methods. CdZnTe detectors of different geometries are discussed in detail, covering the principal of the electrode geometry design, the design and performance characteristics, some detector prototypes development and special correction techniques to improve the energy resolution. Finally, the state of art development of 3-D position sensing and Compton imaging technique are also discussed. Spectroscopic performance of CdZnTe semiconductor detector will be greatly improved even to approach the statistical limit on energy resolution with the combination of some of these techniques. PMID:23429509

Analysis of Te and TeO 2 on CdZnTe Nuclear Detectors Treated with Hydrogen Bromide and Ammonium-Based Solutions

DOE PAGES

Drabo, Mebougna L.; Egarievwe, Stephen U.; Okwechime, Ifechukwude O.; ...

2017-04-30

Surface defects caused during cutting and polishing in the fabrication of cadmium zinc telluride (CdZnTe) nuclear detectors limit their spectral performance. Chemical treatments are often used to remove surface damages and defects. In this paper, we present the analysis of Te and TeO 2 species on the surfaces of CdZnTe nuclear detectors treated with hydrogen bromide and ammonium-based solutions. The CdZnTe wafers were chemo-mechanically polished in a mixture of hydrogen bromide in hydrogen peroxide and ethylene glycol, followed by a chemical passivation in a mixture of ammonium fluoride and hydrogen peroxide solution. X-ray photoelectron spectroscopy showed significant conversion of Temore » to TeO 2, thus producing a more chemically stable surface. The resistivity of the CdZnTe samples is in the order of 1010 ohms-cm. The current for a given applied voltage increased following the passivation and decreased after a 3-hour period. Results from spectral response measurements showed that the 59.5-keV gamma-peak of Am-241 was stable under the same channel for the surface treatment processes.« less

A time-resolved image sensor for tubeless streak cameras

NASA Astrophysics Data System (ADS)

Yasutomi, Keita; Han, SangMan; Seo, Min-Woong; Takasawa, Taishi; Kagawa, Keiichiro; Kawahito, Shoji

2014-03-01

This paper presents a time-resolved CMOS image sensor with draining-only modulation (DOM) pixels for tube-less streak cameras. Although the conventional streak camera has high time resolution, the device requires high voltage and bulky system due to the structure with a vacuum tube. The proposed time-resolved imager with a simple optics realize a streak camera without any vacuum tubes. The proposed image sensor has DOM pixels, a delay-based pulse generator, and a readout circuitry. The delay-based pulse generator in combination with an in-pixel logic allows us to create and to provide a short gating clock to the pixel array. A prototype time-resolved CMOS image sensor with the proposed pixel is designed and implemented using 0.11um CMOS image sensor technology. The image array has 30(Vertical) x 128(Memory length) pixels with the pixel pitch of 22.4um. .

A 25μm pitch LWIR focal plane array with pixel-level 15-bit ADC providing high well capacity and targeting 2mK NETD

NASA Astrophysics Data System (ADS)

Guellec, Fabrice; Peizerat, Arnaud; Tchagaspanian, Michael; de Borniol, Eric; Bisotto, Sylvette; Mollard, Laurent; Castelein, Pierre; Zanatta, Jean-Paul; Maillart, Patrick; Zecri, Michel; Peyrard, Jean-Christophe

2010-04-01

CEA Leti has recently developed a new readout IC (ROIC) with pixel-level ADC for cooled infrared focal plane arrays (FPAs). It operates at 50Hz frame rate in a snapshot Integrate-While-Read (IWR) mode. It targets applications that provide a large amount of integrated charge thanks to a long integration time. The pixel-level analog-to-digital conversion is based on charge packets counting. This technique offers a large well capacity that paves the way for a breakthrough in NETD performances. The 15 bits ADC resolution preserves the excellent detector SNR at full well (3Ge-). These characteristics are essential for LWIR FPAs as broad intra-scene dynamic range imaging requires high sensitivity. The ROIC, featuring a 320x256 array with 25μm pixel pitch, has been designed in a standard 0.18μm CMOS technology. The main design challenges for this digital pixel array (SNR, power consumption and layout density) are discussed. The IC has been hybridized to a LWIR detector fabricated using our in-house HgCdTe process. The first electro-optical test results of the detector dewar assembly are presented. They validate both the pixel-level ADC concept and its circuit implementation. Finally, the benefit of this LWIR FPA in terms of NETD performance is demonstrated.

Characterization of HgCdTe Films Grown on Large-Area CdZnTe Substrates by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Arkun, F. Erdem; Edwall, Dennis D.; Ellsworth, Jon; Douglas, Sheri; Zandian, Majid; Carmody, Michael

2017-09-01

Recent advances in growth of Hg1- x Cd x Te films on large-area (7 cm × 7.5 cm) CdZnTe (CZT) substrates is presented. Growth of Hg1- x Cd x Te with good uniformity on large-area wafers is achieved using a Riber 412 molecular beam epitaxy (MBE) tool designed for growth of Hg1- x Cd x Te compounds. The reactor is equipped with conventional CdTe, Te, and Hg sources for achieving uniform exposure of the wafer during growth. The composition of the Hg1- x Cd x Te compound is controlled in situ by employing a closed-loop spectral ellipsometry technique to achieve a cutoff wavelength ( λ co) of 14 μm at 78 K. We present data on the thickness and composition uniformity of films grown for large-format focal-plane array applications. The composition and thickness nonuniformity are determined to be <1% over the area of a 7 cm × 7.5 cm wafer. The films are further characterized by Fourier-transform infrared spectroscopy, optical microscopy, and Hall measurements. Additionally, defect maps show the spatial distribution of defects generated during the epitaxial growth of the Hg1- x Cd x Te films. Microdefect densities are in the low 103 cm-2 range, and void defects are below 500 cm-2. Dislocation densities less than 5 × 105 cm-2 are routinely achieved for Hg1- x Cd x Te films grown on CZT substrates. HgCdTe 4k × 4k focal-plane arrays with 15 μm pitch for astronomical wide-area infrared imagers have been produced using the recently developed MBE growth process at Teledyne Imaging Sensors.

Overview of APEX Capabilities

NASA Astrophysics Data System (ADS)

De Breuck, Carlos

2018-03-01

The APEX telescope has a range instruments that are highly complementary to ALMA. The single pixel heterodyne receivers cover virtually all atmospheric windows from 157 GHz to above 1 THz, augmented by 7-pixel heterodyne arrays covering 280 to 950 GHz, while the bolometer arrays cover the 870, 450 and 350µm bands.

Towards dualband megapixel QWIP focal plane arrays

NASA Astrophysics Data System (ADS)

Gunapala, S. D.; Bandara, S. V.; Liu, J. K.; Mumolo, J. M.; Hill, C. J.; Rafol, S. B.; Salazar, D.; Woolaway, J.; LeVan, P. D.; Tidrow, M. Z.

2007-04-01

Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024 × 1024 pixel quantum well infrared photodetector (QWIP) focal planes have been demonstrated with excellent imaging performance. The MWIR QWIP detector array has demonstrated a noise equivalent differential temperature (NEΔT) of 17 mK at a 95 K operating temperature with f/2.5 optics at 300 K background and the LWIR detector array has demonstrated a NEΔT of 13 mK at a 70 K operating temperature with the same optical and background conditions as the MWIR detector array after the subtraction of system noise. Both MWIR and LWIR focal planes have shown background limited performance (BLIP) at 90 K and 70 K operating temperatures respectively, with similar optical and background conditions. In addition, we have demonstrated MWIR and LWIR pixel co-registered simultaneously readable dualband QWIP focal plane arrays. In this paper, we will discuss the performance in terms of quantum efficiency, NEΔT, uniformity, operability, and modulation transfer functions of the 1024 × 1024 pixel arrays and the progress of dualband QWIP focal plane array development work.

Multicolor megapixel QWIP focal plane arrays for remote sensing instruments

NASA Astrophysics Data System (ADS)

Gunapala, S. D.; Bandara, S. V.; Liu, J. K.; Hill, C. J.; Rafol, S. B.; Mumolo, J. M.; Trinh, J. T.; Tidrow, M. Z.; LeVan, P. D.

2006-08-01

Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024x1024 pixel quantum well infrared photodetector (QWIP) focal planes have been demonstrated with excellent imaging performance. The MWIR QWIP detector array has demonstrated a noise equivalent differential temperature (NEΔT) of 17 mK at a 95K operating temperature with f/2.5 optics at 300K background and the LWIR detector array has demonstrated a NEΔT of 13 mK at a 70K operating temperature with the same optical and background conditions as the MWIR detector array after the subtraction of system noise. Both MWIR and LWIR focal planes have shown background limited performance (BLIP) at 90K and 70K operating temperatures respectively, with similar optical and background conditions. In addition, we have demonstrated MWIR and LWIR pixel co-registered simultaneously readable dualband QWIP focal plane arrays. In this paper, we will discuss the performance in terms of quantum efficiency, NEΔT, uniformity, operability, and modulation transfer functions of the 1024x1024 pixel arrays and the progress of dualband QWIP focal plane array development work.

Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

PubMed Central

Sordo, Stefano Del; Abbene, Leonardo; Caroli, Ezio; Mancini, Anna Maria; Zappettini, Andrea; Ubertini, Pietro

2009-01-01

Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors. PMID:22412323

Development of Fuses for Protection of Geiger-Mode Avalanche Photodiode Arrays

NASA Astrophysics Data System (ADS)

Grzesik, Michael; Bailey, Robert; Mahan, Joe; Ampe, Jim

2015-11-01

Current-limiting fuses composed of Ti/Al/Ni were developed for use in Geiger-mode avalanche photodiode arrays for each individual pixel in the array. The fuses were designed to burn out at ˜4.5 × 10-3 A and maintain post-burnout leakage currents less than 10-7 A at 70 V sustained for several minutes. Experimental fuse data are presented and successful incorporation of the fuses into a 256 × 64 pixel InP-based Geiger-mode avalanche photodiode array is reported.

Photon-counting array detectors for space and ground-based studies at ultraviolet and vacuum ultraviolet /VUV/ wavelengths

NASA Technical Reports Server (NTRS)

Timothy, J. G.; Bybee, R. L.

1981-01-01

The Multi-Anode Microchannel Arrays (MAMAs) are a family of photoelectric photon-counting array detectors, with formats as large as (256 x 1024)-pixels that can be operated in a windowless configuration at vacuum ultraviolet (VUV) and soft X-ray wavelengths or in a sealed configuration at ultraviolet and visible wavelengths. This paper describes the construction and modes of operation of (1 x 1024)-pixel and (24 x 1024)-pixel MAMA detector systems that are being built and qualified for use in sounding-rocket spectrometers for solar and stellar observations at wavelengths below 1300 A. The performance characteristics of the MAMA detectors at ultraviolet and VUV wavelengths are also described.

WE-G-204-03: Photon-Counting Hexagonal Pixel Array CdTe Detector: Optimal Resampling to Square Pixels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shrestha, S; Vedantham, S; Karellas, A

Purpose: Detectors with hexagonal pixels require resampling to square pixels for distortion-free display of acquired images. In this work, the presampling modulation transfer function (MTF) of a hexagonal pixel array photon-counting CdTe detector for region-of-interest fluoroscopy was measured and the optimal square pixel size for resampling was determined. Methods: A 0.65mm thick CdTe Schottky sensor capable of concurrently acquiring up to 3 energy-windowed images was operated in a single energy-window mode to include ≥10 KeV photons. The detector had hexagonal pixels with apothem of 30 microns resulting in pixel spacing of 60 and 51.96 microns along the two orthogonal directions.more » Images of a tungsten edge test device acquired under IEC RQA5 conditions were double Hough transformed to identify the edge and numerically differentiated. The presampling MTF was determined from the finely sampled line spread function that accounted for the hexagonal sampling. The optimal square pixel size was determined in two ways; the square pixel size for which the aperture function evaluated at the Nyquist frequencies along the two orthogonal directions matched that from the hexagonal pixel aperture functions, and the square pixel size for which the mean absolute difference between the square and hexagonal aperture functions was minimized over all frequencies up to the Nyquist limit. Results: Evaluation of the aperture functions over the entire frequency range resulted in square pixel size of 53 microns with less than 2% difference from the hexagonal pixel. Evaluation of the aperture functions at Nyquist frequencies alone resulted in 54 microns square pixels. For the photon-counting CdTe detector and after resampling to 53 microns square pixels using quadratic interpolation, the presampling MTF at Nyquist frequency of 9.434 cycles/mm along the two directions were 0.501 and 0.507. Conclusion: Hexagonal pixel array photon-counting CdTe detector after resampling to square pixels provides high-resolution imaging suitable for fluoroscopy.« less

Fast, Deep-Record-Length, Fiber-Coupled Photodiode Imaging Array for Plasma Diagnostics

NASA Astrophysics Data System (ADS)

Brockington, Samuel; Case, Andrew; Witherspoon, F. Douglas

2014-10-01

HyperV Technologies has been developing an imaging diagnostic comprised of an array of fast, low-cost, long-record-length, fiber-optically-coupled photodiode channels to investigate plasma dynamics and other fast, bright events. By coupling an imaging fiber bundle to a bank of amplified photodiode channels, imagers and streak imagers of 100 to 1000 pixels can be constructed. By interfacing analog photodiode systems directly to commercial analog-to-digital converters and modern memory chips, a prototype 100 pixel array with an extremely deep record length (128 k points at 20 Msamples/s) and 10 bit pixel resolution has already been achieved. HyperV now seeks to extend these techniques to construct a prototype 1000 Pixel framing camera with up to 100 Msamples/sec rate and 10 to 12 bit depth. Preliminary experimental results as well as Phase 2 plans will be discussed. Work supported by USDOE Phase 2 SBIR Grant DE-SC0009492.

Fill-factor improvement of Si CMOS single-photon avalanche diode detector arrays by integration of diffractive microlens arrays.

PubMed

Intermite, Giuseppe; McCarthy, Aongus; Warburton, Ryan E; Ren, Ximing; Villa, Federica; Lussana, Rudi; Waddie, Andrew J; Taghizadeh, Mohammad R; Tosi, Alberto; Zappa, Franco; Buller, Gerald S

2015-12-28

Single-photon avalanche diode (SPAD) detector arrays generally suffer from having a low fill-factor, in which the photo-sensitive area of each pixel is small compared to the overall area of the pixel. This paper describes the integration of different configurations of high efficiency diffractive optical microlens arrays onto a 32 × 32 SPAD array, fabricated using a 0.35 µm CMOS technology process. The characterization of SPAD arrays with integrated microlens arrays is reported over the spectral range of 500-900 nm, and a range of f-numbers from f/2 to f/22. We report an average concentration factor of 15 measured for the entire SPAD array with integrated microlens array. The integrated SPAD and microlens array demonstrated a very high uniformity in overall efficiency.

1024-Pixel CMOS Multimodality Joint Cellular Sensor/Stimulator Array for Real-Time Holistic Cellular Characterization and Cell-Based Drug Screening.

PubMed

Park, Jong Seok; Aziz, Moez Karim; Li, Sensen; Chi, Taiyun; Grijalva, Sandra Ivonne; Sung, Jung Hoon; Cho, Hee Cheol; Wang, Hua

2018-02-01

This paper presents a fully integrated CMOS multimodality joint sensor/stimulator array with 1024 pixels for real-time holistic cellular characterization and drug screening. The proposed system consists of four pixel groups and four parallel signal-conditioning blocks. Every pixel group contains 16 × 16 pixels, and each pixel includes one gold-plated electrode, four photodiodes, and in-pixel circuits, within a pixel footprint. Each pixel supports real-time extracellular potential recording, optical detection, charge-balanced biphasic current stimulation, and cellular impedance measurement for the same cellular sample. The proposed system is fabricated in a standard 130-nm CMOS process. Rat cardiomyocytes are successfully cultured on-chip. Measured high-resolution optical opacity images, extracellular potential recordings, biphasic current stimulations, and cellular impedance images demonstrate the unique advantages of the system for holistic cell characterization and drug screening. Furthermore, this paper demonstrates the use of optical detection on the on-chip cultured cardiomyocytes to real-time track their cyclic beating pattern and beating rate.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Becker, Julian; Tate, Mark W.; Shanks, Katherine S.

Pixel Array Detectors (PADs) consist of an x-ray sensor layer bonded pixel-by-pixel to an underlying readout chip. This approach allows both the sensor and the custom pixel electronics to be tailored independently to best match the x-ray imaging requirements. Here we describe the hybridization of CdTe sensors to two different charge-integrating readout chips, the Keck PAD and the Mixed-Mode PAD (MM-PAD), both developed previously in our laboratory. The charge-integrating architecture of each of these PADs extends the instantaneous counting rate by many orders of magnitude beyond that obtainable with photon counting architectures. The Keck PAD chip consists of rapid, 8-frame,more » in-pixel storage elements with framing periods <150 ns. The second detector, the MM-PAD, has an extended dynamic range by utilizing an in-pixel overflow counter coupled with charge removal circuitry activated at each overflow. This allows the recording of signals from the single-photon level to tens of millions of x-rays/pixel/frame while framing at 1 kHz. Both detector chips consist of a 128×128 pixel array with (150 µm){sup 2} pixels.« less

Detector Having A Transmission Grating Beam Splitter For Multi-Wavelength Sample Analysis.

DOEpatents

Liu, Changsheng; Li, Qingbo

2000-09-12

A detector for DNA sample identification is provided with a transmission grating beam splitter (TGBS). The TGBS split fluoresced light from a tagged DNA sample into 0th order and a 1st order components, both of which are detected on a two-dimensional detector array of a CCD camera. The 0th and 1st order components are detected along a column of pixels in the detector array, and are spaced apart from one another. The DNA samples are tagged with four fluorescent dyes, one dye specific for each nucleotide, and all four dyes responding in slightly different manner to the same monochromatic excitation signal. The TGBS splits fluoresced incoming light into 0th and 1st order components, which are then spread out among a number of pixels in the detector array. The 1st component of this light is received by pixels whose position relative to the 0th order component depends on the frequency of fluorescence. Thus, the position at which signal energy is detected on the array is indicative of the particular dye, and therefore, the corresponding nucleotide tagged by that dye. Monitoring signal energy at the 0th order pixel and selected 1st order pixels, provides a set of data from which one may then identify the particular nucleotide.

Detector Having A Transmission Grating Beam Splitter For Multi-Wavelength.

DOEpatents

Liu, Changsheng; Li, Qingbo (State College, PA

1999-12-07

A detector for DNA sample identification is provided with a transmission grating beam splitter (TGBS). The TGBS split fluoresced light from a tagged DNA sample into 0th order and a 1st order components, both of which are detected on a two-dimensional detector array of a CCD camera. The 0th and 1st order components are detected along a column of pixels in the detector array, and are spaced apart from one another. The DNA samples are tagged with four fluorescent dyes, one dye specific for each nucleotide, and all four dyes responding in slightly different manner to the same monochromatic excitation signal. The TGBS splits fluoresced incoming light into 0th and 1st order components, which are then spread out among a number of pixels in the detector array. The 1st component of this light is received by pixels whose position relative to the 0th order component depends on the frequency of fluorescence. Thus, the position at which signal energy is detected on the array is indicative of the particular dye, and therefore, the corresponding nucleotide tagged by that dye. Monitoring signal energy at the 0th order pixel and selected 1st order pixels, provides a set of data from which one may then identify the particular nucleotide.

Modulation transfer function measurement of microbolometer focal plane array by Lloyd's mirror method

NASA Astrophysics Data System (ADS)

Druart, Guillaume; Rommeluere, Sylvain; Viale, Thibault; Guerineau, Nicolas; Ribet-Mohamed, Isabelle; Crastes, Arnaud; Durand, Alain; Taboury, Jean

2014-05-01

Today, both military and civilian applications require miniaturized and cheap optical systems. One way to achieve this trend consists in decreasing the pixel pitch of focal plane arrays (FPA). In order to evaluate the performance of the overall optical systems, it is necessary to measure the modulation transfer function (MTF) of these pixels. However, small pixels lead to higher cut-off frequencies and therefore, original MTF measurements that are able to extract frequencies up to these high cut-off frequencies, are needed. In this paper, we will present a way to extract 1D MTF at high frequencies by projecting fringes on the FPA. The device uses a Lloyd mirror placed near and perpendicular to the focal plane array. Consequently, an interference pattern of fringes can be projected on the detector. By varying the angle of incidence of the light beam, we can tune the period of the interference fringes and, thus, explore a wide range of spatial frequencies, and mainly around the cut-off frequency of the pixel which is one of the most interesting area. Illustration of this method will be applied to a 640×480 microbolometer focal plane array with a pixel pitch of 17µm in the LWIR spectral region.

The NUC and blind pixel eliminating in the DTDI application

NASA Astrophysics Data System (ADS)

Su, Xiao Feng; Chen, Fan Sheng; Pan, Sheng Da; Gong, Xue Yi; Dong, Yu Cui

2013-12-01

AS infrared CMOS Digital TDI (Time Delay and integrate) has a simple structure, excellent performance and flexible operation, it has been used in more and more applications. Because of the limitation of the Production process level, the plane array of the infrared detector has a large NU (non-uniformity) and a certain blind pixel rate. Both of the two will raise the noise and lead to the TDI works not very well. In this paper, for the impact of the system performance, the most important elements are analyzed, which are the NU of the optical system, the NU of the Plane array and the blind pixel in the Plane array. Here a reasonable algorithm which considers the background removal and the linear response model of the infrared detector is used to do the NUC (Non-uniformity correction) process, when the infrared detector array is used as a Digital TDI. In order to eliminate the impact of the blind pixel, the concept of surplus pixel method is introduced in, through the method, the SNR (signal to noise ratio) can be improved and the spatial and temporal resolution will not be changed. Finally we use a MWIR (Medium Ware Infrared) detector to do the experiment and the result proves the effectiveness of the method.

Flight performance of an advanced CZT imaging detector in a balloon-borne wide-field hard X-ray telescope—ProtoEXIST1

NASA Astrophysics Data System (ADS)

Hong, J.; Allen, B.; Grindlay, J.; Barthelemy, S.; Baker, R.; Garson, A.; Krawczynski, H.; Apple, J.; Cleveland, W. H.

2011-10-01

We successfully carried out the first high-altitude balloon flight of a wide-field hard X-ray coded-aperture telescope ProtoEXIST1, which was launched from the Columbia Scientific Balloon Facility at Ft. Sumner, New Mexico on October 9, 2009. ProtoEXIST1 is the first implementation of an advanced CdZnTe (CZT) imaging detector in our ongoing program to establish the technology required for next generation wide-field hard X-ray telescopes such as the High Energy Telescope (HET) in the Energetic X-ray Imaging Survey Telescope (EXIST). The CZT detector plane in ProtoEXIST1 consists of an 8×8 array of closely tiled 2 cm×2 cm×0.5 cm thick pixellated CZT crystals, each with 8×8 pixels, mounted on a set of readout electronics boards and covering a 256 cm2 active area with 2.5 mm pixels. A tungsten mask, mounted at 90 cm above the detector provides shadowgrams of X-ray sources in the 30-600 keV band for imaging, allowing a fully coded field of view of 9°×9° (and 19°×19° for 50% coding fraction) with an angular resolution of 20‧. In order to reduce the background radiation, the detector is surrounded by semi-graded (Pb/Sn/Cu) passive shields on the four sides all the way to the mask. On the back side, a 26 cm×26 cm×2 cm CsI(Na) active shield provides signals to tag charged particle induced events as well as ≳100keV background photons from below. The flight duration was only about 7.5 h due to strong winds (60 knots) at float altitude (38-39 km). Throughout the flight, the CZT detector performed excellently. The telescope observed Cyg X-1, a bright black hole binary system, for ˜1h at the end of the flight. Despite a few problems with the pointing and aspect systems that caused the telescope to track about 6.4° off the target, the analysis of the Cyg X-1 data revealed an X-ray source at 7.2σ in the 30-100 keV energy band at the expected location from the optical images taken by the onboard daytime star camera. The success of this first flight is very encouraging for the future development of the advanced CZT imaging detectors (ProtoEXIST2, with 0.6 mm pixels), which will take advantage of the modularization architecture employed in ProtoEXIST1.

Prototype AEGIS: A Pixel-Array Readout Circuit for Gamma-Ray Imaging.

PubMed

Barber, H Bradford; Augustine, F L; Furenlid, L; Ingram, C M; Grim, G P

2005-07-31

Semiconductor detector arrays made of CdTe/CdZnTe are expected to be the main components of future high-performance, clinical nuclear medicine imaging systems. Such systems will require small pixel-pitch and much larger numbers of pixels than are available in current semiconductor-detector cameras. We describe the motivation for developing a new readout integrated circuit, AEGIS, for use in hybrid semiconductor detector arrays, that may help spur the development of future cameras. A basic design for AEGIS is presented together with results of an HSPICE ™ simulation of the performance of its unit cell. AEGIS will have a shaper-amplifier unit cell and neighbor pixel readout. Other features include the use of a single input power line with other biases generated on-board, a control register that allows digital control of all thresholds and chip configurations and an output approach that is compatible with list-mode data acquisition. An 8×8 prototype version of AEGIS is currently under development; the full AEGIS will be a 64×64 array with 300 μm pitch.

High-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor array

NASA Astrophysics Data System (ADS)

Guss, Paul; Rabin, Michael; Croce, Mark; Hoteling, Nathan; Schwellenbach, David; Kruschwitz, Craig; Mocko, Veronika; Mukhopadhyay, Sanjoy

2017-09-01

We demonstrate very high-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor (TES) array. The readout circuit consists of superconducting microwave resonators coupled to radio frequency superconducting-quantum-interference devices (RF-SQUIDs) and transduces changes in input current to changes in phase of a microwave signal. We used a flux-ramp modulation to linearize the response and avoid low-frequency noise. The result is a very high-resolution photon spectroscopy with a microwave-multiplexed 4-pixel transition edge sensor array. We performed and validated a small-scale demonstration and test of all the components of our concept system, which encompassed microcalorimetry, microwave multiplexing, RF-SQUIDs, and software-defined radio (SDR). We shall display data we acquired in the first simultaneous combination of all key innovations in a 4-pixel demonstration, including microcalorimetry, microwave multiplexing, RF-SQUIDs, and SDR. We present the energy spectrum of a gadolinium-153 (153Gd) source we measured using our 4-pixel TES array and the RF-SQUID multiplexer. For each pixel, one can observe the two 97.4 and 103.2 keV photopeaks. We measured the 153Gd photon source with an achieved energy resolution of 70 eV, full width half maximum (FWHM) at 100 keV, and an equivalent readout system noise of 90 pA/pHz at the TES. This demonstration establishes a path for the readout of cryogenic x-ray and gamma ray sensor arrays with more elements and spectral resolving powers. We believe this project has improved capabilities and substantively advanced the science useful for missions such as nuclear forensics, emergency response, and treaty verification through the explored TES developments.

Micromachined poly-SiGe bolometer arrays for infrared imaging and spectroscopy

NASA Astrophysics Data System (ADS)

Leonov, Vladimir N.; Perova, Natalia A.; De Moor, Piet; Du Bois, Bert; Goessens, Claus; Grietens, Bob; Verbist, Agnes; Van Hoof, Chris A.; Vermeiren, Jan P.

2003-03-01

The state-of-the-art characteristics of micromachined polycrystalline SiGe microbolometer arrays are reported. An average NETD of 85 mK at a time constant of 14 ms is already achievable on typical self-supported 50 μm pixels in a linear 64-element array. In order to reach these values, the design optimization was performed based on the performance characteristics of linear 32-, 64- and 128-element arrays of 50-, 60- and 75-μm-pixel bolometers on several detector lots. The infrared and thermal modeling accounting for the read-out properties and self-heating effect in bolometers resulted in improved designs and competitive NETD values of 80 mK on 50 μm pixels in a 160x128 format at standard frame rates and f-number of 1. In parallel, the TCR-to-1/f noise ratio and the mechanical design of the pixels were improved making poly-SiGe a good candidate for a low-cost uncooled thermal array. The technological CMOS-based process possesses an attractive balance between characteristics and price, and allows the micromachining of thin structures, less than 0.2 μm. The resistance and TCR non-uniformity with σ/μ better than 0.2% combined with 99.93% yield are demonstrated. The first lots of fully processed linear arrays have already come from the IMEC process line and the results of characterization are presented. Next year, the first linear and small 2D arrays will be introduced on the market.

Submillimeter Bolometer Array for the CSO

NASA Astrophysics Data System (ADS)

Wang, Ning; Hunter, T. R.; Benford, D. J.; Phillips, T. G.

We are building a bolometer array for use as a submillimeter continuum camera for the Caltech Submillimeter Observatory (CSO) located on Mauna Kea. This effort is a collaboration with Moseley et al. at Goddard Space Flight Center, who have developed the technique for fabricating monolithic bolometer arrays on Si wafers, as well as a sophisticated data taking system to use with these arrays (Moseley et al. 1984). Our primary goal is to construct a camera with 1x24 bolometer pixels operating at 350 and 450 microns using a 3He refrigerator. The monolithic bolometer arrays are fabricated using the techniques of photolithography and micromachining. Each pixel of the array is suspended by four thin Si legs 2 mm long and 12x14 square microns in cross section. These thin legs, obtained by wet Si etching, provide the weak thermal link between the bolometer pixel and the heat sink. A thermistor is formed on each bolometer pixel by P implantation compensated with 50% B. The bolometer array to be used for the camera will have a pixel size of 1x2 square millimeters, which is about half of the CSO beam size at a wavelength of 400 microns. We plan to use mirrors to focus the beam onto the pixels intead of Winston cones. In order to eliminate background radiation from warm surroundings reaching the bolometers, cold baffles will be inserted along the beam passages. To increase the bolometer absorption to radiation, a thin metal film will be deposited on the back of each bolometer pixel. It has been demonstrated that a proper impedance match of the bolometer element can increase the bolometer absorption efficiency to about 50% (Clarke et al., 1978). The use of baffle approach to illumination will make it easier for us to expand to more pixels in the future. The first stage amplification will be performed with cold FETs, connected to each bolometer pixel. Signals from each bolometer will be digitized using a 16 bit A/D with differential inputs. The digitizing frequency will be up to 40 kHz, though 1 kHz should be sufficient for our application. The output from the A/D will be fed to a digital signal processing (DSP) board via fiber optic cables, which will minimize the RF interference to the bolometers. To date, we have assembled a 1x24 bolometer array, and we are in the process of testing it. We are also designing and bulding cryogenic optics. The data acquisition hardware is nearly completed, as well as the electronics. Our goal is to get the instrument working after a new chopping secondary mirror in installed at the CSO in the summer of 1994. References: Moseley, S.H. et al. 1984, J. Appl. Phys.,56,1257; Clarke et al. 1977, J. Appl. Phys., 48, 4865.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kishimoto, S., E-mail: syunji.kishimoto@kek.jp; Haruki, R.; Mitsui, T.

We developed a silicon avalanche photodiode (Si-APD) linear-array detector for use in nuclear resonant scattering experiments using synchrotron X-rays. The Si-APD linear array consists of 64 pixels (pixel size: 100 × 200 μm{sup 2}) with a pixel pitch of 150 μm and depletion depth of 10 μm. An ultrafast frontend circuit allows the X-ray detector to obtain a high output rate of >10{sup 7} cps per pixel. High-performance integrated circuits achieve multichannel scaling over 1024 continuous time bins with a 1 ns resolution for each pixel without dead time. The multichannel scaling method enabled us to record a time spectrummore » of the 14.4 keV nuclear radiation at each pixel with a time resolution of 1.4 ns (FWHM). This method was successfully applied to nuclear forward scattering and nuclear small-angle scattering on {sup 57}Fe.« less

Log polar image sensor in CMOS technology

NASA Astrophysics Data System (ADS)

Scheffer, Danny; Dierickx, Bart; Pardo, Fernando; Vlummens, Jan; Meynants, Guy; Hermans, Lou

1996-08-01

We report on the design, design issues, fabrication and performance of a log-polar CMOS image sensor. The sensor is developed for the use in a videophone system for deaf and hearing impaired people, who are not capable of communicating through a 'normal' telephone. The system allows 15 detailed images per second to be transmitted over existing telephone lines. This framerate is sufficient for conversations by means of sign language or lip reading. The pixel array of the sensor consists of 76 concentric circles with (up to) 128 pixels per circle, in total 8013 pixels. The interior pixels have a pitch of 14 micrometers, up to 250 micrometers at the border. The 8013-pixels image is mapped (log-polar transformation) in a X-Y addressable 76 by 128 array.

Pixel parallel localized driver design for a 128 x 256 pixel array 3D 1Gfps image sensor

NASA Astrophysics Data System (ADS)

Zhang, C.; Dao, V. T. S.; Etoh, T. G.; Charbon, E.

2017-02-01

In this paper, a 3D 1Gfps BSI image sensor is proposed, where 128 × 256 pixels are located in the top-tier chip and a 32 × 32 localized driver array in the bottom-tier chip. Pixels are designed with Multiple Collection Gates (MCG), which collects photons selectively with different collection gates being active at intervals of 1ns to achieve 1Gfps. For the drivers, a global PLL is designed, which consists of a ring oscillator with 6-stage current starved differential inverters, achieving a wide frequency tuning range from 40MHz to 360MHz (20ps rms jitter). The drivers are the replicas of the ring oscillator that operates within a PLL. Together with level shifters and XNOR gates, continuous 3.3V pulses are generated with desired pulse width, which is 1/12 of the PLL clock period. The driver array is activated by a START signal, which propagates through a highly balanced clock tree, to activate all the pixels at the same time with virtually negligible skew.

Transparent Fingerprint Sensor System for Large Flat Panel Display.

PubMed

Seo, Wonkuk; Pi, Jae-Eun; Cho, Sung Haeung; Kang, Seung-Youl; Ahn, Seong-Deok; Hwang, Chi-Sun; Jeon, Ho-Sik; Kim, Jong-Uk; Lee, Myunghee

2018-01-19

In this paper, we introduce a transparent fingerprint sensing system using a thin film transistor (TFT) sensor panel, based on a self-capacitive sensing scheme. An armorphousindium gallium zinc oxide (a-IGZO) TFT sensor array and associated custom Read-Out IC (ROIC) are implemented for the system. The sensor panel has a 200 × 200 pixel array and each pixel size is as small as 50 μm × 50 μm. The ROIC uses only eight analog front-end (AFE) amplifier stages along with a successive approximation analog-to-digital converter (SAR ADC). To get the fingerprint image data from the sensor array, the ROIC senses a capacitance, which is formed by a cover glass material between a human finger and an electrode of each pixel of the sensor array. Three methods are reviewed for estimating the self-capacitance. The measurement result demonstrates that the transparent fingerprint sensor system has an ability to differentiate a human finger's ridges and valleys through the fingerprint sensor array.

Transparent Fingerprint Sensor System for Large Flat Panel Display

PubMed Central

Seo, Wonkuk; Pi, Jae-Eun; Cho, Sung Haeung; Kang, Seung-Youl; Ahn, Seong-Deok; Hwang, Chi-Sun; Jeon, Ho-Sik; Kim, Jong-Uk

2018-01-01

In this paper, we introduce a transparent fingerprint sensing system using a thin film transistor (TFT) sensor panel, based on a self-capacitive sensing scheme. An armorphousindium gallium zinc oxide (a-IGZO) TFT sensor array and associated custom Read-Out IC (ROIC) are implemented for the system. The sensor panel has a 200 × 200 pixel array and each pixel size is as small as 50 μm × 50 μm. The ROIC uses only eight analog front-end (AFE) amplifier stages along with a successive approximation analog-to-digital converter (SAR ADC). To get the fingerprint image data from the sensor array, the ROIC senses a capacitance, which is formed by a cover glass material between a human finger and an electrode of each pixel of the sensor array. Three methods are reviewed for estimating the self-capacitance. The measurement result demonstrates that the transparent fingerprint sensor system has an ability to differentiate a human finger’s ridges and valleys through the fingerprint sensor array. PMID:29351218

Large-format platinum silicide microwave kinetic inductance detectors for optical to near-IR astronomy.

PubMed

Szypryt, P; Meeker, S R; Coiffard, G; Fruitwala, N; Bumble, B; Ulbricht, G; Walter, A B; Daal, M; Bockstiegel, C; Collura, G; Zobrist, N; Lipartito, I; Mazin, B A

2017-10-16

We have fabricated and characterized 10,000 and 20,440 pixel Microwave Kinetic Inductance Detector (MKID) arrays for the Dark-speckle Near-IR Energy-resolved Superconducting Spectrophotometer (DARKNESS) and the MKID Exoplanet Camera (MEC). These instruments are designed to sit behind adaptive optics systems with the goal of directly imaging exoplanets in a 800-1400 nm band. Previous large optical and near-IR MKID arrays were fabricated using substoichiometric titanium nitride (TiN) on a silicon substrate. These arrays, however, suffered from severe non-uniformities in the TiN critical temperature, causing resonances to shift away from their designed values and lowering usable detector yield. We have begun fabricating DARKNESS and MEC arrays using platinum silicide (PtSi) on sapphire instead of TiN. Not only do these arrays have much higher uniformity than the TiN arrays, resulting in higher pixel yields, they have demonstrated better spectral resolution than TiN MKIDs of similar design. PtSi MKIDs also do not display the hot pixel effects seen when illuminating TiN on silicon MKIDs with photons with wavelengths shorter than 1 µm.

Angle- and polarization-insensitive, small area, subtractive color filters via a-Si nanopillar arrays (Conference Presentation)

NASA Astrophysics Data System (ADS)

Fountaine, Katherine T.; Ito, Mikinori; Pala, Ragip; Atwater, Harry A.

2016-09-01

Spectrally-selective nanophotonic and plasmonic structures enjoy widespread interest for application as color filters in imaging devices, due to their potential advantages over traditional organic dyes and pigments. Organic dyes are straightforward to implement with predictable optical performance at large pixel size, but suffer from inherent optical cross-talk and stability (UV, thermal, humidity) issues and also exhibit increasingly unpredictable performance as pixel size approaches dye molecule size. Nanophotonic and plasmonic color filters are more robust, but often have polarization- and angle-dependent optical response and/or require large-range periodicity. Herein, we report on design and fabrication of polarization- and angle-insensitive CYM color filters based on a-Si nanopillar arrays as small as 1um2, supported by experiment, simulation, and analytic theory. Analytic waveguide and Mie theories explain the color filtering mechanism- efficient coupling into and interband transition-mediated attenuation of waveguide-like modes—and also guided the FDTD simulation-based optimization of nanopillar array dimensions. The designed a-Si nanopillar arrays were fabricated using e-beam lithography and reactive ion etching; and were subsequently optically characterized, revealing the predicted polarization- and angle-insensitive (±40°) subtractive filter responses. Cyan, yellow, and magenta color filters have each been demonstrated. The effects of nanopillar array size and inter-array spacing were investigated both experimentally and theoretically to probe the issues of ever-shrinking pixel sizes and cross-talk, respectively. Results demonstrate that these nanopillar arrays maintain their performance down to 1um2 pixel sizes with no inter-array spacing. These concepts and results along with color-processed images taken with a fabricated color filter array will be presented and discussed.

A 64-pixel NbTiN superconducting nanowire single-photon detector array for spatially resolved photon detection.

PubMed

Miki, Shigehito; Yamashita, Taro; Wang, Zhen; Terai, Hirotaka

2014-04-07

We present the characterization of two-dimensionally arranged 64-pixel NbTiN superconducting nanowire single-photon detector (SSPD) array for spatially resolved photon detection. NbTiN films deposited on thermally oxidized Si substrates enabled the high-yield production of high-quality SSPD pixels, and all 64 SSPD pixels showed uniform superconducting characteristics within the small range of 7.19-7.23 K of superconducting transition temperature and 15.8-17.8 μA of superconducting switching current. Furthermore, all of the pixels showed single-photon sensitivity, and 60 of the 64 pixels showed a pulse generation probability higher than 90% after photon absorption. As a result of light irradiation from the single-mode optical fiber at different distances between the fiber tip and the active area, the variations of system detection efficiency (SDE) in each pixel showed reasonable Gaussian distribution to represent the spatial distributions of photon flux intensity.

Design and Development of 256x256 Linear Mode Low-Noise Avalanche Photodiode Arrays

NASA Technical Reports Server (NTRS)

Yuan, Ping; Sudharsanan, Rengarajan; Bai, Xiaogang; Boisvert, Joseph; McDonald, Paul; Chang, James

2011-01-01

A larger format photodiode array is always desirable for many LADAR imaging applications. However, as the array format increases, the laser power or the lens aperture has to increase to maintain the same flux per pixel thus increasing the size, weight and power of the imaging system. In order to avoid this negative impact, it is essential to improve the pixel sensitivity. The sensitivity of a short wavelength infrared linear-mode avalanche photodiode (APD) is a delicate balance of quantum efficiency, usable gain, excess noise factor, capacitance, and dark current of APD as well as the input equivalent noise of the amplifier. By using InA1As as a multiplication layer in an InP-based APD, the ionization coefficient ratio, k, is reduced from 0.40 (lnP) to 0.22, and the excess noise is reduced by about 50%. An additional improvement in excess noise of 25% was achieved by employing an impact-ionization-engineering structure with a k value of 0.15. Compared with the traditional InP structure, about 30% reduction in the noise-equivalent power with the following amplifier can be achieved. Spectrolab demonstrated 30-um mesa APD pixels with a dark current less than 10 nA and a capacitance of 60 fF at gain of 10. APD gain uninformity determines the usable gain of most pixels in an array, which is critical to focal plane array sensitivity. By fine tuning the material growth and device process, a break-down-voltage standard deviation of 0.1 V and gain of 30 on individual pixels were demonstrated in our 256x256 linear-mode APD arrays.

Signal-Conditioning Block of a 1 × 200 CMOS Detector Array for a Terahertz Real-Time Imaging System

PubMed Central

Yang, Jong-Ryul; Lee, Woo-Jae; Han, Seong-Tae

2016-01-01

A signal conditioning block of a 1 × 200 Complementary Metal-Oxide-Semiconductor (CMOS) detector array is proposed to be employed with a real-time 0.2 THz imaging system for inspecting large areas. The plasmonic CMOS detector array whose pixel size including an integrated antenna is comparable to the wavelength of the THz wave for the imaging system, inevitably carries wide pixel-to-pixel variation. To make the variant outputs from the array uniform, the proposed signal conditioning block calibrates the responsivity of each pixel by controlling the gate bias of each detector and the voltage gain of the lock-in amplifiers in the block. The gate bias of each detector is modulated to 1 MHz to improve the signal-to-noise ratio of the imaging system via the electrical modulation by the conditioning block. In addition, direct current (DC) offsets of the detectors in the array are cancelled by initializing the output voltage level from the block. Real-time imaging using the proposed signal conditioning block is demonstrated by obtaining images at the rate of 19.2 frame-per-sec of an object moving on the conveyor belt with a scan width of 20 cm and a scan speed of 25 cm/s. PMID:26950128

Signal-Conditioning Block of a 1 × 200 CMOS Detector Array for a Terahertz Real-Time Imaging System.

PubMed

Yang, Jong-Ryul; Lee, Woo-Jae; Han, Seong-Tae

2016-03-02

A signal conditioning block of a 1 × 200 Complementary Metal-Oxide-Semiconductor (CMOS) detector array is proposed to be employed with a real-time 0.2 THz imaging system for inspecting large areas. The plasmonic CMOS detector array whose pixel size including an integrated antenna is comparable to the wavelength of the THz wave for the imaging system, inevitably carries wide pixel-to-pixel variation. To make the variant outputs from the array uniform, the proposed signal conditioning block calibrates the responsivity of each pixel by controlling the gate bias of each detector and the voltage gain of the lock-in amplifiers in the block. The gate bias of each detector is modulated to 1 MHz to improve the signal-to-noise ratio of the imaging system via the electrical modulation by the conditioning block. In addition, direct current (DC) offsets of the detectors in the array are cancelled by initializing the output voltage level from the block. Real-time imaging using the proposed signal conditioning block is demonstrated by obtaining images at the rate of 19.2 frame-per-sec of an object moving on the conveyor belt with a scan width of 20 cm and a scan speed of 25 cm/s.

Characteristics of Monolithically Integrated InGaAs Active Pixel Imager Array

NASA Technical Reports Server (NTRS)

Kim, Q.; Cunningham, T. J.; Pain, B.; Lange, M. J.; Olsen, G. H.

2000-01-01

Switching and amplifying characteristics of a newly developed monolithic InGaAs Active Pixel Imager Array are presented. The sensor array is fabricated from InGaAs material epitaxially deposited on an InP substrate. It consists of an InGaAs photodiode connected to InP depletion-mode junction field effect transistors (JFETs) for low leakage, low power, and fast control of circuit signal amplifying, buffering, selection, and reset. This monolithically integrated active pixel sensor configuration eliminates the need for hybridization with silicon multiplexer. In addition, the configuration allows the sensor to be front illuminated, making it sensitive to visible as well as near infrared signal radiation. Adapting the existing 1.55 micrometer fiber optical communication technology, this integration will be an ideal system of optoelectronic integration for dual band (Visible/IR) applications near room temperature, for use in atmospheric gas sensing in space, and for target identification on earth. In this paper, two different types of small 4 x 1 test arrays will be described. The effectiveness of switching and amplifying circuits will be discussed in terms of circuit effectiveness (leakage, operating frequency, and temperature) in preparation for the second phase demonstration of integrated, two-dimensional monolithic InGaAs active pixel sensor arrays for applications in transportable shipboard surveillance, night vision, and emission spectroscopy.

Comparison of the surfaces and interfaces formed for sputter and electroless deposited gold contacts on CdZnTe

NASA Astrophysics Data System (ADS)

Bell, Steven J.; Baker, Mark A.; Duarte, Diana D.; Schneider, Andreas; Seller, Paul; Sellin, Paul J.; Veale, Matthew C.; Wilson, Matthew D.

2018-01-01

Cadmium zinc telluride (CdZnTe) is a leading sensor material for spectroscopic X/γ-ray imaging in the fields of homeland security, medical imaging, industrial analysis and astrophysics. The metal-semiconductor interface formed during contact deposition is of fundamental importance to the spectroscopic performance of the detector and is primarily determined by the deposition method. A multi-technique analysis of the metal-semiconductor interface formed by sputter and electroless deposition of gold onto (111) aligned CdZnTe is presented. Focused ion beam (FIB) cross section imaging, X-ray photoelectron spectroscopy (XPS) depth profiling and current-voltage (IV) analysis have been applied to determine the structural, chemical and electronic properties of the gold contacts. In a novel approach, principal component analysis has been employed on the XPS depth profiles to extract detailed chemical state information from different depths within the profile. It was found that electroless deposition forms a complicated, graded interface comprised of tellurium oxide, gold/gold telluride particulates, and cadmium chloride. This compared with a sharp transition from surface gold to bulk CdZnTe observed for the interface formed by sputter deposition. The electronic (IV) response for the detector with electroless deposited contacts was symmetric, but was asymmetric for the detector with sputtered gold contacts. This is due to the electroless deposition degrading the difference between the Cd- and Te-faces of the CdZnTe (111) crystal, whilst these differences are maintained for the sputter deposited gold contacts. This work represents an important step in the optimisation of the metal-semiconductor interface which currently is a limiting factor in the development of high resolution CdZnTe detectors.

Heat Sinking, Cross Talk, and Temperature Stability for Large, Close-Packed Arrays of Microcalorimeters

NASA Technical Reports Server (NTRS)

Imoto, Naoko; Bandler, SImon; Brekosky, Regis; Chervenak, James; Figueroa-Felicano, Enectali; Finkbeiner, Frederick; Kelley, Richard; Kilbourne, Caroline; Porter, Frederick; Sadleir, Jack;

First Tests of Prototype SCUBA-2 Superconducting Bolometer Array

NASA Astrophysics Data System (ADS)

Woodcraft, Adam L.; Ade, Peter A. R.; Bintley, Dan; Hunt, Cynthia L.; Sudiwala, Rashmi V.; Hilton, Gene C.; Irwin, Kent D.; Reintsema, Carl D.; Audley, Michael D.; Holland, Wayne S.; MacIntosh, Mike

2006-09-01

We present results of the first tests on a 1280 pixel superconducting bolometer array, a prototype for SCUBA-2, a sub-mm camera being built for the James Clerk Maxwell Telescope in Hawaii. The bolometers are TES (transition edge sensor) detectors; these take advantage of the large variation of resistance with temperature through the superconducting transition. To keep the number of wires reasonable, a multiplexed read-out is used. Each pixel is read out through an individual DC SQUID; room temperature electronics switch between rows in the array by biasing the appropriate SQUIDs in turn. Arrays of 100 SQUIDs in series for each column then amplify the output. Unlike previous TES arrays, the multiplexing elements are located beneath each pixel, making large arrays possible, but construction more challenging. The detectors are constructed from Mo/Cu bi-layers; this technique enables the transition temperature to be tuned using the proximity effect by choosing the thickness of the normal and superconducting materials. To achieve the required performance, the detectors are operated at a temperature of approximately 120 mK. We describe the results of a basic characterisation of the array, demonstrating that it is fully operational, and give the results of signal to noise measurements.

Structural colour printing from a reusable generic nanosubstrate masked for the target image

NASA Astrophysics Data System (ADS)

Rezaei, M.; Jiang, H.; Kaminska, B.

2016-02-01

Structural colour printing has advantages over traditional pigment-based colour printing. However, the high fabrication cost has hindered its applications in printing large-area images because each image requires patterning structural pixels in nanoscale resolution. In this work, we present a novel strategy to print structural colour images from a pixelated substrate which is called a nanosubstrate. The nanosubstrate is fabricated only once using nanofabrication tools and can be reused for printing a large quantity of structural colour images. It contains closely packed arrays of nanostructures from which red, green, blue and infrared structural pixels can be imprinted. To print a target colour image, the nanosubstrate is first covered with a mask layer to block all the structural pixels. The mask layer is subsequently patterned according to the target colour image to make apertures of controllable sizes on top of the wanted primary colour pixels. The masked nanosubstrate is then used as a stamp to imprint the colour image onto a separate substrate surface using nanoimprint lithography. Different visual colours are achieved by properly mixing the red, green and blue primary colours into appropriate ratios controlled by the aperture sizes on the patterned mask layer. Such a strategy significantly reduces the cost and complexity of printing a structural colour image from lengthy nanoscale patterning into high throughput micro-patterning and makes it possible to apply structural colour printing in personalized security features and data storage. In this paper, nanocone array grating pixels were used as the structural pixels and the nanosubstrate contains structures to imprint the nanocone arrays. Laser lithography was implemented to pattern the mask layer with submicron resolution. The optical properties of the nanocone array gratings are studied in detail. Multiple printed structural colour images with embedded covert information are demonstrated.

Charge Gain, Voltage Gain, and Node Capacitance of the SAPHIRA Detector Pixel by Pixel

NASA Astrophysics Data System (ADS)

Pastrana, Izabella M.; Hall, Donald N. B.; Baker, Ian M.; Jacobson, Shane M.; Goebel, Sean B.

2018-01-01

The University of Hawai`i Institute for Astronomy has partnered with Leonardo (formerly Selex) in the development of HgCdTe linear mode avalanche photodiode (L-APD) SAPHIRA detectors. The SAPHIRA (Selex Avalanche Photodiode High-speed Infra-Red Array) is ideally suited for photon-starved astronomical observations, particularly near infrared (NIR) adaptive optics (AO) wave-front sensing. I have measured the stability, and linearity with current, of a 1.7-um (10% spectral bandpass) infrared light emitting diode (IR LED) used to illuminate the SAPHIRA and have then utilized this source to determine the charge gain (in e-/ADU), voltage gain (in uV/ADU), and node capacitance (in fF) for each pixel of the 320x256@24um SAPHIRA. These have previously only been averages over some sub-array. Determined from the ratio of the temporal averaged signal level to variance under constant 1.7-um LED illumination, I present the charge gain pixel-by-pixel in a 64x64 sub-array at the center of the active area of the SAPHIRA (analyzed separately as four 32x32 sub-arrays) to be about 1.6 e-/ADU (σ=0.5 e-/ADU). Additionally, the standard technique of varying the pixel reset voltage (PRV) in 10 mV increments and recording output frames for the same 64x64 subarray found the voltage gain per pixel to be about 11.7 uV/ADU (σ=0.2 uV/ADU). Finally, node capacitance was found to be approximately 23 fF (σ=6 fF) utilizing the aforementioned charge and voltage gain measurements. I further discuss the linearity measurements of the 1.7-um LED used in the charge gain characterization procedure.

Nonuniformity correction algorithm with efficient pixel offset estimation for infrared focal plane arrays.

PubMed

Orżanowski, Tomasz

2016-01-01

This paper presents an infrared focal plane array (IRFPA) response nonuniformity correction (NUC) algorithm which is easy to implement by hardware. The proposed NUC algorithm is based on the linear correction scheme with the useful method of pixel offset correction coefficients update. The new approach to IRFPA response nonuniformity correction consists in the use of pixel response change determined at the actual operating conditions in relation to the reference ones by means of shutter to compensate a pixel offset temporal drift. Moreover, it permits to remove any optics shading effect in the output image as well. To show efficiency of the proposed NUC algorithm some test results for microbolometer IRFPA are presented.

Evaluating video digitizer errors

NASA Astrophysics Data System (ADS)

Peterson, C.

2016-01-01

Analog output video cameras remain popular for recording meteor data. Although these cameras uniformly employ electronic detectors with fixed pixel arrays, the digitization process requires resampling the horizontal lines as they are output in order to reconstruct the pixel data, usually resulting in a new data array of different horizontal dimensions than the native sensor. Pixel timing is not provided by the camera, and must be reconstructed based on line sync information embedded in the analog video signal. Using a technique based on hot pixels, I present evidence that jitter, sync detection, and other timing errors introduce both position and intensity errors which are not present in cameras which internally digitize their sensors and output the digital data directly.

Layer by layer: complex analysis with OCT technology

NASA Astrophysics Data System (ADS)

Florin, Christian

2017-03-01

Standard visualisation systems capture two- dimensional images and need more or less fast image processing systems. Now, the ASP Array (Actives sensor pixel array) opens a new world in imaging. On the ASP array, each pixel is provided with its own lens and with its own signal pre-processing. The OCT technology works in "real time" with highest accuracy. In the ASP array systems functionalities of the data acquisition and signal processing are even integrated onto the "pixel level". For the extraction of interferometric features, the time-of-flight principle (TOF) is used. The ASP architecture offers the demodulation of the optical signal within a pixel with up to 100 kHz and the reconstruction of the amplitude and its phase. The dynamics of image capture with the ASP array is higher by two orders of magnitude in comparison with conventional image sensors!!! The OCT- Technology allows a topographic imaging in real time with an extremely high geometric spatial resolution. The optical path length is generated by an axial movement of the reference mirror. The amplitude-modulated optical signal and the carrier frequency are proportional to the scan rate and contains the depth information. Each maximum of the signal envelope corresponds to a reflection (or scattering) within a sample. The ASP array produces at same time 300 * 300 axial Interferorgrams which touch each other on all sides. The signal demodulation for detecting the envelope is not limited by the frame rate of the ASP array in comparison to standard OCT systems. If an optical signal arrives to a pixel of the ASP Array an electrical signal is generated. The background is faded to saturation of pixels by high light intensity to avoid. The sampled signal is integrated continuously multiplied by a signal of the same frequency and two paths whose phase is shifted by 90 degrees from each other are averaged. The outputs of the two paths are routed to the PC, where the envelope amplitude and the phase calculate a three-dimensional tomographic image. For 3D measuring technique specially designed ASP- arrays with a very high image rate are available. If ASP- Arrays are coupled with the OCT method, layer thicknesses can be determined without contact, sealing seams can be inspected or geometrical shapes can be measured. From a stack of hundreds of single OCT images, interesting images can be selected and fed to the computer to analyse them.

Soft lithography microlens fabrication and array for enhanced light extraction from organic light emitting diodes (OLEDs)

DOEpatents

Leung, Wai Y.; Park, Joong-Mok; Gan, Zhengqing; Constant, Kristen P.; Shinar, Joseph; Shinar, Ruth; ho, Kai-Ming

2014-06-03

Provided are microlens arrays for use on the substrate of OLEDs to extract more light that is trapped in waveguided modes inside the devices and methods of manufacturing same. Light extraction with microlens arrays is not limited to the light emitting area, but is also efficient in extracting light from the whole microlens patterned area where waveguiding occurs. Large microlens array, compared to the size of the light emitting area, extract more light and result in over 100% enhancement. Such a microlens array is not limited to (O)LEDs of specific emission, configuration, pixel size, or pixel shape. It is suitable for all colors, including white, for microcavity OLEDs, and OLEDs fabricated directly on the (modified) microlens array.

Design and fabrication of AlGaInP-based micro-light-emitting-diode array devices

NASA Astrophysics Data System (ADS)

Bao, Xingzhen; Liang, Jingqiu; Liang, Zhongzhu; Wang, Weibiao; Tian, Chao; Qin, Yuxin; Lü, Jinguang

2016-04-01

An integrated high-resolution (individual pixel size 80 μm×80 μm) solid-state self-emissive active matrix programmed with 320×240 micro-light-emitting-diode arrays structure was designed and fabricated on an AlGaInP semiconductor chip using micro electro-mechanical systems, microstructure and semiconductor fabricating techniques. Row pixels share a p-electrode and line pixels share an n-electrode. We experimentally investigated GaAs substrate thickness affects the electrical and optical characteristics of the pixels. For a 150-μm-thick GaAs substrate, the single pixel output power was 167.4 μW at 5 mA, and increased to 326.4 μW when current increase to 10 mA. The device investigated potentially plays an important role in many fields.

A 128 x 128 InGaAs detector array for 1.0 - 1.7 microns

NASA Technical Reports Server (NTRS)

Olsen, G.; Joshi, A.; Lange, M.; Woodruff, K.; Mykietyn, E.; Gay, D.; Ackley, D.; Erickson, G.; Ban, V.; Staller, C.

1990-01-01

A two-dimensional 128 x 128 detector array for the 1.0 - 1.7 micron spectral region has been demonstrated with indium gallium arsenide. The 30 micron square pixels had 60 micron spacing in both directions and were designed to be compatible with a 2D Reticon multiplexer. Dark currents below 100 pA, capacitance near 0.1 pF, and quantum efficiencies above 80 percent were measured. Probe maps of dark current and quantum efficiency are presented along with pixel dropout data and wafer yield which was as high as 99.89 percent (7 dropouts) in an area of 6528 pixels and 99.37 percent (103 dropouts) over an entire 128 x 128 pixel region.

CMOS imager for pointing and tracking applications

NASA Technical Reports Server (NTRS)

Sun, Chao (Inventor); Pain, Bedabrata (Inventor); Yang, Guang (Inventor); Heynssens, Julie B. (Inventor)

2006-01-01

Systems and techniques to realize pointing and tracking applications with CMOS imaging devices. In general, in one implementation, the technique includes: sampling multiple rows and multiple columns of an active pixel sensor array into a memory array (e.g., an on-chip memory array), and reading out the multiple rows and multiple columns sampled in the memory array to provide image data with reduced motion artifact. Various operation modes may be provided, including TDS, CDS, CQS, a tracking mode to read out multiple windows, and/or a mode employing a sample-first-read-later readout scheme. The tracking mode can take advantage of a diagonal switch array. The diagonal switch array, the active pixel sensor array and the memory array can be integrated onto a single imager chip with a controller. This imager device can be part of a larger imaging system for both space-based applications and terrestrial applications.

Three-dimensional cross point readout detector design for including depth information

NASA Astrophysics Data System (ADS)

Lee, Seung-Jae; Baek, Cheol-Ha

2018-04-01

We designed a depth-encoding positron emission tomography (PET) detector using a cross point readout method with wavelength-shifting (WLS) fibers. To evaluate the characteristics of the novel detector module and the PET system, we used the DETECT2000 to perform optical photon transport in the crystal array. The GATE was also used. The detector module is made up of four layers of scintillator arrays, the five layers of WLS fiber arrays, and two sensor arrays. The WLS fiber arrays in each layer cross each other to transport light to each sensor array. The two sensor arrays are coupled to the forward and left sides of the WLS fiber array, respectively. The identification of three-dimensional pixels was determined using a digital positioning algorithm. All pixels were well decoded, with the system resolution ranging from 2.11 mm to 2.29 mm at full width at half maximum (FWHM).

Analysis of low-offset CTIA amplifier for small-size-pixel infrared focal plane array

NASA Astrophysics Data System (ADS)

Zhang, Xue; Huang, Zhangcheng; Shao, Xiumei

2014-11-01

The design of input stage amplifier becomes more and more difficult as the expansion of format arrays and reduction of pixel size. A design method of low-offset amplifier based on 0.18-μm process used in small-size pixel is analyzed in order to decrease the dark signal of extended wavelength InGaAs infrared focal plane arrays (IRFPA). Based on an example of a cascode operational amplifier (op-amp), the relationship between input offset voltage and size of each transistor is discussed through theoretical analysis and Monte Carlo simulation. The results indicate that input transistors and load transistors have great influence on the input offset voltage while common-gate transistors are negligible. Furthermore, the offset voltage begins to increase slightly when the width and length of transistors decrease along with the diminution of pixel size, and raises rapidly when the size is smaller than a proximate threshold value. The offset voltage of preamplifiers with differential architecture and single-shared architecture in small pitch pixel are studied. After optimization under same conditions, simulation results show that single-shared architecture has smaller offset voltage than differential architecture.

MKID digital readout tuning with deep learning

NASA Astrophysics Data System (ADS)

Dodkins, R.; Mahashabde, S.; O'Brien, K.; Thatte, N.; Fruitwala, N.; Walter, A. B.; Meeker, S. R.; Szypryt, P.; Mazin, B. A.

2018-04-01

Microwave Kinetic Inductance Detector (MKID) devices offer inherent spectral resolution, simultaneous read out of thousands of pixels, and photon-limited sensitivity at optical wavelengths. Before taking observations the readout power and frequency of each pixel must be individually tuned, and if the equilibrium state of the pixels change, then the readout must be retuned. This process has previously been performed through manual inspection, and typically takes one hour per 500 resonators (20 h for a ten-kilo-pixel array). We present an algorithm based on a deep convolution neural network (CNN) architecture to determine the optimal bias power for each resonator. The bias point classifications from this CNN model, and those from alternative automated methods, are compared to those from human decisions, and the accuracy of each method is assessed. On a test feed-line dataset, the CNN achieves an accuracy of 90% within 1 dB of the designated optimal value, which is equivalent accuracy to a randomly selected human operator, and superior to the highest scoring alternative automated method by 10%. On a full ten-kilopixel array, the CNN performs the characterization in a matter of minutes - paving the way for future mega-pixel MKID arrays.

Spectral X-Ray Diffraction using a 6 Megapixel Photon Counting Array Detector.

PubMed

Muir, Ryan D; Pogranichniy, Nicholas R; Muir, J Lewis; Sullivan, Shane Z; Battaile, Kevin P; Mulichak, Anne M; Toth, Scott J; Keefe, Lisa J; Simpson, Garth J

2015-03-12

Pixel-array array detectors allow single-photon counting to be performed on a massively parallel scale, with several million counting circuits and detectors in the array. Because the number of photoelectrons produced at the detector surface depends on the photon energy, these detectors offer the possibility of spectral imaging. In this work, a statistical model of the instrument response is used to calibrate the detector on a per-pixel basis. In turn, the calibrated sensor was used to perform separation of dual-energy diffraction measurements into two monochromatic images. Targeting applications include multi-wavelength diffraction to aid in protein structure determination and X-ray diffraction imaging.

Spectral x-ray diffraction using a 6 megapixel photon counting array detector

NASA Astrophysics Data System (ADS)

Muir, Ryan D.; Pogranichniy, Nicholas R.; Muir, J. Lewis; Sullivan, Shane Z.; Battaile, Kevin P.; Mulichak, Anne M.; Toth, Scott J.; Keefe, Lisa J.; Simpson, Garth J.

2015-03-01

Pixel-array array detectors allow single-photon counting to be performed on a massively parallel scale, with several million counting circuits and detectors in the array. Because the number of photoelectrons produced at the detector surface depends on the photon energy, these detectors offer the possibility of spectral imaging. In this work, a statistical model of the instrument response is used to calibrate the detector on a per-pixel basis. In turn, the calibrated sensor was used to perform separation of dual-energy diffraction measurements into two monochromatic images. Targeting applications include multi-wavelength diffraction to aid in protein structure determination and X-ray diffraction imaging.

Surface-Micromachined Planar Arrays of Thermopiles

NASA Technical Reports Server (NTRS)

Foote, Marc C.

2003-01-01

Planar two-dimensional arrays of thermopiles intended for use as thermal-imaging detectors are to be fabricated by a process that includes surface micromachining. These thermopile arrays are designed to perform better than do prior two-dimensional thermopile arrays. The lower performance of prior two-dimensional thermopile arrays is attributed to the following causes: The thermopiles are made from low-performance thermoelectric materials. The devices contain dielectric supporting structures, the thermal conductances of which give rise to parasitic losses of heat from detectors to substrates. The bulk-micromachining processes sometimes used to remove substrate material under the pixels, making it difficult to incorporate low-noise readout electronic circuitry. The thermoelectric lines are on the same level as the infrared absorbers, thereby reducing fill factor. The improved pixel design of a thermopile array of the type under development is expected to afford enhanced performance by virtue of the following combination of features: Surface-micromachined detectors are thermally isolated through suspension above readout circuitry. The thermopiles are made of such high-performance thermoelectric materials as Bi-Te and Bi-Sb-Te alloys. Pixel structures are supported only by the thermoelectric materials: there are no supporting dielectric structures that could leak heat by conduction to the substrate.

Design, Fabrication, and Testing of a TiN Ti TiN Trilayer KID Array for 3mm CMB Observations

NASA Technical Reports Server (NTRS)

Lowitz, A. E.; Brown, A. D.; Mikula, V.; Stevenson, T. R.; Timbie, P. T.; Wollack, E. J.

2016-01-01

Kinetic inductance detectors (KIDs) are a promising technology for astronomical observations over a wide range of wavelengths in the mm and sub-mm regime. Simple fabrication, in as little as one lithographic layer, and passive frequency-domain multiplexing, with readout of up to 1000 pixels on a single line with a single cold amplifier, make KIDs an attractive solution for high-pixel-count detector arrays. We are developing an array that optimizes KIDs for optical frequencies near 100GHz to expand their usefulness in mm-wave applications, with a particular focus on CMBB-mode measurement efforts in association with the QUBIC telescope. We have designed, fabricated, and tested a 20-pixel prototype array using a simple quasi lumped microstrip design and pulsed DC reactive magnetron-sputtered TiNTiTiN trilayer resonators, optimized for detecting 100GHz (3mm) signals. Here we present a discussion of design considerations for the array, as well as preliminary detector characterization measurements and results from a study of TiN trilayer properties.

X-ray characterization of a multichannel smart-pixel array detector.

PubMed

Ross, Steve; Haji-Sheikh, Michael; Huntington, Andrew; Kline, David; Lee, Adam; Li, Yuelin; Rhee, Jehyuk; Tarpley, Mary; Walko, Donald A; Westberg, Gregg; Williams, George; Zou, Haifeng; Landahl, Eric

2016-01-01

The Voxtel VX-798 is a prototype X-ray pixel array detector (PAD) featuring a silicon sensor photodiode array of 48 × 48 pixels, each 130 µm × 130 µm × 520 µm thick, coupled to a CMOS readout application specific integrated circuit (ASIC). The first synchrotron X-ray characterization of this detector is presented, and its ability to selectively count individual X-rays within two independent arrival time windows, a programmable energy range, and localized to a single pixel is demonstrated. During our first trial run at Argonne National Laboratory's Advance Photon Source, the detector achieved a 60 ns gating time and 700 eV full width at half-maximum energy resolution in agreement with design parameters. Each pixel of the PAD holds two independent digital counters, and the discriminator for X-ray energy features both an upper and lower threshold to window the energy of interest discarding unwanted background. This smart-pixel technology allows energy and time resolution to be set and optimized in software. It is found that the detector linearity follows an isolated dead-time model, implying that megahertz count rates should be possible in each pixel. Measurement of the line and point spread functions showed negligible spatial blurring. When combined with the timing structure of the synchrotron storage ring, it is demonstrated that the area detector can perform both picosecond time-resolved X-ray diffraction and fluorescence spectroscopy measurements.

Achieving ultra-high temperatures with a resistive emitter array

NASA Astrophysics Data System (ADS)

Danielson, Tom; Franks, Greg; Holmes, Nicholas; LaVeigne, Joe; Matis, Greg; McHugh, Steve; Norton, Dennis; Vengel, Tony; Lannon, John; Goodwin, Scott

2016-05-01

The rapid development of very-large format infrared detector arrays has challenged the IR scene projector community to also develop larger-format infrared emitter arrays to support the testing of systems incorporating these detectors. In addition to larger formats, many scene projector users require much higher simulated temperatures than can be generated with current technology in order to fully evaluate the performance of their systems and associated processing algorithms. Under the Ultra High Temperature (UHT) development program, Santa Barbara Infrared Inc. (SBIR) is developing a new infrared scene projector architecture capable of producing both very large format (>1024 x 1024) resistive emitter arrays and improved emitter pixel technology capable of simulating very high apparent temperatures. During earlier phases of the program, SBIR demonstrated materials with MWIR apparent temperatures in excess of 1400 K. New emitter materials have subsequently been selected to produce pixels that achieve even higher apparent temperatures. Test results from pixels fabricated using the new material set will be presented and discussed. A 'scalable' Read In Integrated Circuit (RIIC) is also being developed under the same UHT program to drive the high temperature pixels. This RIIC will utilize through-silicon via (TSV) and Quilt Packaging (QP) technologies to allow seamless tiling of multiple chips to fabricate very large arrays, and thus overcome the yield limitations inherent in large-scale integrated circuits. Results of design verification testing of the completed RIIC will be presented and discussed.

Mixed Linear/Square-Root Encoded Single Slope Ramp Provides a Fast, Low Noise Analog to Digital Converter with Very High Linearity for Focal Plane Arrays

NASA Technical Reports Server (NTRS)

Wrigley, Christopher James (Inventor); Hancock, Bruce R. (Inventor); Cunningham, Thomas J. (Inventor); Newton, Kenneth W. (Inventor)

2014-01-01

An analog-to-digital converter (ADC) converts pixel voltages from a CMOS image into a digital output. A voltage ramp generator generates a voltage ramp that has a linear first portion and a non-linear second portion. A digital output generator generates a digital output based on the voltage ramp, the pixel voltages, and comparator output from an array of comparators that compare the voltage ramp to the pixel voltages. A return lookup table linearizes the digital output values.

High Speed Edge Detection

NASA Technical Reports Server (NTRS)

Prokop, Norman F (Inventor)

2016-01-01

Analog circuits for detecting edges in pixel arrays are disclosed. A comparator may be configured to receive an all pass signal and a low pass signal for a pixel intensity in an array of pixels. A latch may be configured to receive a counter signal and a latching signal from the comparator. The comparator may be configured to send the latching signal to the latch when the all pass signal is below the low pass signal minus an offset. The latch may be configured to hold a last negative edge location when the latching signal is received from the comparator.

High Speed Edge Detection

NASA Technical Reports Server (NTRS)

Prokop, Norman F (Inventor)

2015-01-01

Analog circuits for detecting edges in pixel arrays are disclosed. A comparator may be configured to receive an all pass signal and a low pass signal for a pixel intensity in an array of pixels. A latch may be configured to receive a counter signal and a latching signal from the comparator. The comparator may be configured to send the latching signal to the latch when the all pass signal is below the low pass signal minus an offset. The latch may be configured to hold a last negative edge location when the latching signal is received from the comparator.

Polarized-pixel performance model for DoFP polarimeter

NASA Astrophysics Data System (ADS)

Feng, Bin; Shi, Zelin; Liu, Haizheng; Liu, Li; Zhao, Yaohong; Zhang, Junchao

2018-06-01

A division of a focal plane (DoFP) polarimeter is manufactured by placing a micropolarizer array directly onto the focal plane array (FPA) of a detector. Each element of the DoFP polarimeter is a polarized pixel. This paper proposes a performance model for a polarized pixel. The proposed model characterizes the optical and electronic performance of a polarized pixel by three parameters. They are respectively major polarization responsivity, minor polarization responsivity and polarization orientation. Each parameter corresponds to an intuitive physical feature of a polarized pixel. This paper further extends this model to calibrate polarization images from a DoFP (division of focal plane) polarimeter. This calibration work is evaluated quantitatively by a developed DoFP polarimeter under varying illumination intensity and angle of linear polarization. The experiment proves that our model reduces nonuniformity to 6.79% of uncalibrated DoLP (degree of linear polarization) images, and significantly improves the visual effect of DoLP images.

X-ray analog pixel array detector for single synchrotron bunch time-resolved imaging.

PubMed

Koerner, Lucas J; Gruner, Sol M

2011-03-01

Dynamic X-ray studies can reach temporal resolutions limited by only the X-ray pulse duration if the detector is fast enough to segregate synchrotron pulses. An analog integrating pixel array detector with in-pixel storage and temporal resolution of around 150 ns, sufficient to isolate pulses, is presented. Analog integration minimizes count-rate limitations and in-pixel storage captures successive pulses. Fundamental tests of noise and linearity as well as high-speed laser measurements are shown. The detector resolved individual bunch trains at the Cornell High Energy Synchrotron Source at levels of up to 3.7 × 10(3) X-rays per pixel per train. When applied to turn-by-turn X-ray beam characterization, single-shot intensity measurements were made with a repeatability of 0.4% and horizontal oscillations of the positron cloud were detected.

X-ray analog pixel array detector for single synchrotron bunch time-resolved imaging

PubMed Central

Koerner, Lucas J.; Gruner, Sol M.

2011-01-01

Dynamic X-ray studies can reach temporal resolutions limited by only the X-ray pulse duration if the detector is fast enough to segregate synchrotron pulses. An analog integrating pixel array detector with in-pixel storage and temporal resolution of around 150 ns, sufficient to isolate pulses, is presented. Analog integration minimizes count-rate limitations and in-pixel storage captures successive pulses. Fundamental tests of noise and linearity as well as high-speed laser measurements are shown. The detector resolved individual bunch trains at the Cornell High Energy Synchrotron Source at levels of up to 3.7 × 103 X-rays per pixel per train. When applied to turn-by-turn X-ray beam characterization, single-shot intensity measurements were made with a repeatability of 0.4% and horizontal oscillations of the positron cloud were detected. PMID:21335901

Characterization of Etch Pit Formation via the Everson-Etching Method on CdZnTe Crystal Surfaces from the Bulk to the Nano-Scale

DOE Office of Scientific and Technical Information (OSTI.GOV)

Teague, L.; Duff, M.; Cadieux, J.

2010-09-24

A combination of atomic force microscopy, optical microscopy, and mass spectrometry was employed to study CdZnTe crystal surface and used etchant solution following exposure of the CdZnTe crystal to the Everson etch solution. We discuss the results of these studies in relationship to the initial surface preparation methods, the performance of the crystals as radiation spectrometers, the observed etch pit densities, and the chemical mechanism of surface etching. Our results show that the surface features that are exposed to etchants result from interactions with the chemical components of the etchants as well as pre-existing mechanical polishing.

Producibility improvements suggested by a validated process model of seeded CdZnTe vertical Bridgman growth

NASA Astrophysics Data System (ADS)

Larson, David J., Jr.; Casagrande, Louis G.; Di Marzio, Don; Levy, Alan; Carlson, Frederick M.; Lee, Taipao; Black, David R.; Wu, Jun; Dudley, Michael

1994-07-01

We have successfully validated theoretical models of seeded vertical Bridgman-Stockbarger CdZnTe crystal growth and post-solidification processing, using in-situ thermal monitoring and innovative material characterization techniques. The models predict the thermal gradients, interface shape, fluid flow and solute redistribution during solidification, as well as the distributions of accumulated excess stress that causes defect generation and redistribution. Data from the furnace and ampoule wall have validated predictions from the thermal model. Results are compared to predictions of the thermal and thermo-solutal models. We explain the measured initial, change-of-rate, and terminal compositional transients as well as the macrosegregation. Macro and micro-defect distributions have been imaged on CdZnTe wafers from 40 mm diameter boules. Superposition of topographic defect images and predicted excess stress patterns suggests the origin of some frequently encountered defects, particularly on a macro scale, to result from the applied and accumulated stress fields and the anisotropic nature of the CdZnTe crystal. Implications of these findings with respect to producibility are discussed.

Towards Development of Microcalorimeter Arrays of Mo/Au Transition-Edge Sensors with Bismuth Absorbers

NASA Technical Reports Server (NTRS)

Tralshawala, Nilesh; Brekosky, Regis; Figueroa-Feliciano, Enectali; Li, Mary; Stahle, Carl; Stahle, Caroline

2000-01-01

We report on our progress towards the development of arrays of X-ray microcalorimeters as candidates for the high resolution x-ray spectrometer on the Constellation-X mission. The microcalorimeter arrays (30 x 30) with appropriate pixel sizes (0.25 mm. x 0.25 mm) and high packing fractions (greater than 96%) are being developed. Each individual pixel has a 10 micron thick Bi X-ray absorber that is shaped like a mushroom to increase the packing fraction, and a Mo/Au proximity effect superconducting transition edge sensor (TES). These are deposited on a 0.25 or 0.5 micron thick silicon nitride membrane with slits to provide a controllable weak thermal link to the sink temperature. Studies are underway to model, test and optimize the TES pixel uniformity, critical current, heat capacity and the membrane thermal conductance in the array structure. Fabrication issues and procedures, and results of our efforts based on these optimizations will be provided.

Characterization System of Multi-pixel Array TES Microcalorimeter

NASA Astrophysics Data System (ADS)

Yoshimoto, Shota; Maehata, Keisuke; Mitsuda, Kazuhisa; Yamanaka, Yoshihiro; Sakai, Kazuhiro; Nagayoshi, Kenichiro; Yamamoto, Ryo; Hayashi, Tasuku; Muramatsu, Haruka

We have constructed characterization system for 64-pixel array transition-edge sensor (TES) microcalorimeter using a 3He-4He dilution refrigerator (DR) with the cooling power of 60 µW at a temperature of 100 mK. A stick equipped with 384 of Manganin wires was inserted into the refrigerator to perform characteristic measurements of 64-pixel array TES microcalorimeter and superconducting quantum interference device (SQUID) array amplifiers. The stick and Manganin wires were thermally anchored at temperatures of 4 and 1 K with sufficient thermal contact. The cold end of the Manganin wires were thermally anchored and connected to CuNi clad NbTi wires at 0.7 K anchor. Then CuNi clad NbTi wires were wired to connectors placed on the holder mounted on the cold stage attached to the base plate of the mixing chamber. The heat flow to the cold stage through the installed wires was estimated to be 0.15 µW. In the operation test the characterization system maintained temperature below 100 mK.

Development of an ultra-high temperature infrared scene projector at Santa Barbara Infrared Inc.

NASA Astrophysics Data System (ADS)

Franks, Greg; Laveigne, Joe; Danielson, Tom; McHugh, Steve; Lannon, John; Goodwin, Scott

2015-05-01

The rapid development of very-large format infrared detector arrays has challenged the IR scene projector community to develop correspondingly larger-format infrared emitter arrays to support the testing needs of systems incorporating these detectors. As with most integrated circuits, fabrication yields for the read-in integrated circuit (RIIC) that drives the emitter pixel array are expected to drop dramatically with increasing size, making monolithic RIICs larger than the current 1024x1024 format impractical and unaffordable. Additionally, many scene projector users require much higher simulated temperatures than current technology can generate to fully evaluate the performance of their systems and associated processing algorithms. Under the Ultra High Temperature (UHT) development program, Santa Barbara Infrared Inc. (SBIR) is developing a new infrared scene projector architecture capable of producing both very large format (>1024x1024) resistive emitter arrays and improved emitter pixel technology capable of simulating very high apparent temperatures. During an earlier phase of the program, SBIR demonstrated materials with MWIR apparent temperatures in excess of 1000K. New emitter materials have subsequently been selected to produce pixels that achieve even higher apparent temperatures. Test results from pixels fabricated using the new material set will be presented and discussed. Also in development under the same UHT program is a 'scalable' RIIC that will be used to drive the high temperature pixels. This RIIC will utilize through-silicon vias (TSVs) and quilt packaging (QP) technologies to allow seamless tiling of multiple chips to fabricate very large arrays, and thus overcome the inherent yield limitations of very-large-scale integrated circuits. Current status of the RIIC development effort will also be presented.

CdCl2 passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells

NASA Astrophysics Data System (ADS)

Swanson, Drew E.; Reich, Carey; Abbas, Ali; Shimpi, Tushar; Liu, Hanxiao; Ponce, Fernando A.; Walls, John M.; Zhang, Yong-Hang; Metzger, Wyatt K.; Sampath, W. S.; Holman, Zachary C.

2018-05-01

As single-junction silicon solar cells approach their theoretical limits, tandems provide the primary path to higher efficiencies. CdTe alloys can be tuned with magnesium (CdMgTe) or zinc (CdZnTe) for ideal tandem pairing with silicon. A II-VI/Si tandem holds the greatest promise for inexpensive, high-efficiency top cells that can be quickly deployed in the market using existing polycrystalline CdTe manufacturing lines combined with mature silicon production lines. Currently, all high efficiency polycrystalline CdTe cells require a chloride-based passivation process to passivate grain boundaries and bulk defects. This research examines the rich chemistry and physics that has historically limited performance when extending Cl treatments to polycrystalline 1.7-eV CdMgTe and CdZnTe absorbers. A combination of transmittance, quantum efficiency, photoluminescence, transmission electron microscopy, and energy-dispersive X-ray spectroscopy clearly reveals that during passivation, Mg segregates and out-diffuses, initially at the grain boundaries but eventually throughout the bulk. CdZnTe exhibits similar Zn segregation behavior; however, the onset and progression is localized to the back of the device. After passivation, CdMgTe and CdZnTe can render a layer that is reduced to predominantly CdTe electro-optical behavior. Contact instabilities caused by inter-diffusion between the layers create additional complications. The results outline critical issues and paths for these materials to be successfully implemented in Si-based tandems and other applications.

Novel laser-processed CsI:Tl detector for SPECT

PubMed Central

Sabet, H.; Bläckberg, L.; Uzun-Ozsahin, D.; El-Fakhri, G.

2016-01-01

Purpose: The aim of this work is to demonstrate the feasibility of a novel technique for fabrication of high spatial resolution CsI:Tl scintillation detectors for single photon emission computed tomography systems. Methods: The scintillators are fabricated using laser-induced optical barriers technique to create optical microstructures (or optical barriers) inside the CsI:Tl crystal bulk. The laser-processed CsI:Tl crystals are 3, 5, and 10 mm in thickness. In this work, the authors focus on the simplest pattern of optical barriers in that the barriers are created in the crystal bulk to form pixel-like patterns resembling mechanically pixelated scintillators. The monolithic CsI:Tl scintillator samples are fabricated with optical barrier patterns with 1.0 × 1.0 mm2 and 0.625 × 0.625 mm2 pixels. Experiments were conducted to characterize the fabricated arrays in terms of pixel separation and energy resolution. A 4 × 4 array of multipixel photon counter was used to collect the scintillation light in all the experiments. Results: The process yield for fabricating the CsI:Tl arrays is 100% with processing time under 50 min. From the flood maps of the fabricated detectors exposed to 122 keV gammas, peak-to-valley (P/V) ratios of greater than 2.3 are calculated. The P/V values suggest that regardless of the crystal thickness, the pixels can be resolved. Conclusions: The results suggest that optical barriers can be considered as a robust alternative to mechanically pixelated arrays and can provide high spatial resolution while maintaining the sensitivity in a high-throughput and cost-effective manner. PMID:27147372

Digital radiology using active matrix readout: amplified pixel detector array for fluoroscopy.

PubMed

Matsuura, N; Zhao, W; Huang, Z; Rowlands, J A

1999-05-01

Active matrix array technology has made possible the concept of flat panel imaging systems for radiography. In the conventional approach a thin-film circuit built on glass contains the necessary switching components (thin-film transistors or TFTs) to readout an image formed in either a phosphor or photoconductor layer. Extension of this concept to real time imaging--fluoroscopy--has had problems due to the very low noise required. A new design strategy for fluoroscopic active matrix flat panel detectors has therefore been investigated theoretically. In this approach, the active matrix has integrated thin-film amplifiers and readout electronics at each pixel and is called the amplified pixel detector array (APDA). Each amplified pixel consists of three thin-film transistors: an amplifier, a readout, and a reset TFT. The performance of the APDA approach compared to the conventional active matrix was investigated for two semiconductors commonly used to construct active matrix arrays--hydrogenated amorphous silicon and polycrystalline silicon. The results showed that with amplification close to the pixel, the noise from the external charge preamplifiers becomes insignificant. The thermal and flicker noise of the readout and the amplifying TFTs at the pixel become the dominant sources of noise. The magnitude of these noise sources is strongly dependent on the TFT geometry and its fabrication process. Both of these could be optimized to make the APDA active matrix operate at lower noise levels than is possible with the conventional approach. However, the APDA cannot be made to operate ideally (i.e., have noise limited only by the amount of radiation used) at the lowest exposure rate required in medical fluoroscopy.

CMOS VLSI Active-Pixel Sensor for Tracking

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Sun, Chao; Yang, Guang; Heynssens, Julie

2004-01-01

An architecture for a proposed active-pixel sensor (APS) and a design to implement the architecture in a complementary metal oxide semiconductor (CMOS) very-large-scale integrated (VLSI) circuit provide for some advanced features that are expected to be especially desirable for tracking pointlike features of stars. The architecture would also make this APS suitable for robotic- vision and general pointing and tracking applications. CMOS imagers in general are well suited for pointing and tracking because they can be configured for random access to selected pixels and to provide readout from windows of interest within their fields of view. However, until now, the architectures of CMOS imagers have not supported multiwindow operation or low-noise data collection. Moreover, smearing and motion artifacts in collected images have made prior CMOS imagers unsuitable for tracking applications. The proposed CMOS imager (see figure) would include an array of 1,024 by 1,024 pixels containing high-performance photodiode-based APS circuitry. The pixel pitch would be 9 m. The operations of the pixel circuits would be sequenced and otherwise controlled by an on-chip timing and control block, which would enable the collection of image data, during a single frame period, from either the full frame (that is, all 1,024 1,024 pixels) or from within as many as 8 different arbitrarily placed windows as large as 8 by 8 pixels each. A typical prior CMOS APS operates in a row-at-a-time ( grolling-shutter h) readout mode, which gives rise to exposure skew. In contrast, the proposed APS would operate in a sample-first/readlater mode, suppressing rolling-shutter effects. In this mode, the analog readout signals from the pixels corresponding to the windows of the interest (which windows, in the star-tracking application, would presumably contain guide stars) would be sampled rapidly by routing them through a programmable diagonal switch array to an on-chip parallel analog memory array. The diagonal-switch and memory addresses would be generated by the on-chip controller. The memory array would be large enough to hold differential signals acquired from all 8 windows during a frame period. Following the rapid sampling from all the windows, the contents of the memory array would be read out sequentially by use of a capacitive transimpedance amplifier (CTIA) at a maximum data rate of 10 MHz. This data rate is compatible with an update rate of almost 10 Hz, even in full-frame operation

Design methodology: edgeless 3D ASICs with complex in-pixel processing for pixel detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fahim Farah, Fahim Farah; Deptuch, Grzegorz W.; Hoff, James R.

The design methodology for the development of 3D integrated edgeless pixel detectors with in-pixel processing using Electronic Design Automation (EDA) tools is presented. A large area 3 tier 3D detector with one sensor layer and two ASIC layers containing one analog and one digital tier, is built for x-ray photon time of arrival measurement and imaging. A full custom analog pixel is 65μm x 65μm. It is connected to a sensor pixel of the same size on one side, and on the other side it has approximately 40 connections to the digital pixel. A 32 x 32 edgeless array withoutmore » any peripheral functional blocks constitutes a sub-chip. The sub-chip is an indivisible unit, which is further arranged in a 6 x 6 array to create the entire 1.248cm x 1.248cm ASIC. Each chip has 720 bump-bond I/O connections, on the back of the digital tier to the ceramic PCB. All the analog tier power and biasing is conveyed through the digital tier from the PCB. The assembly has no peripheral functional blocks, and hence the active area extends to the edge of the detector. This was achieved by using a few flavors of almost identical analog pixels (minimal variation in layout) to allow for peripheral biasing blocks to be placed within pixels. The 1024 pixels within a digital sub-chip array have a variety of full custom, semi-custom and automated timing driven functional blocks placed together. The methodology uses a modified mixed-mode on-top digital implementation flow to not only harness the tool efficiency for timing and floor-planning but also to maintain designer control over compact parasitically aware layout. The methodology uses the Cadence design platform, however it is not limited to this tool.« less

Design methodology: edgeless 3D ASICs with complex in-pixel processing for pixel detectors

NASA Astrophysics Data System (ADS)

Fahim, Farah; Deptuch, Grzegorz W.; Hoff, James R.; Mohseni, Hooman

2015-08-01

The design methodology for the development of 3D integrated edgeless pixel detectors with in-pixel processing using Electronic Design Automation (EDA) tools is presented. A large area 3 tier 3D detector with one sensor layer and two ASIC layers containing one analog and one digital tier, is built for x-ray photon time of arrival measurement and imaging. A full custom analog pixel is 65μm x 65μm. It is connected to a sensor pixel of the same size on one side, and on the other side it has approximately 40 connections to the digital pixel. A 32 x 32 edgeless array without any peripheral functional blocks constitutes a sub-chip. The sub-chip is an indivisible unit, which is further arranged in a 6 x 6 array to create the entire 1.248cm x 1.248cm ASIC. Each chip has 720 bump-bond I/O connections, on the back of the digital tier to the ceramic PCB. All the analog tier power and biasing is conveyed through the digital tier from the PCB. The assembly has no peripheral functional blocks, and hence the active area extends to the edge of the detector. This was achieved by using a few flavors of almost identical analog pixels (minimal variation in layout) to allow for peripheral biasing blocks to be placed within pixels. The 1024 pixels within a digital sub-chip array have a variety of full custom, semi-custom and automated timing driven functional blocks placed together. The methodology uses a modified mixed-mode on-top digital implementation flow to not only harness the tool efficiency for timing and floor-planning but also to maintain designer control over compact parasitically aware layout. The methodology uses the Cadence design platform, however it is not limited to this tool.

A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

NASA Technical Reports Server (NTRS)

Kimble, Randy A.; Pain, Bedabrata; Norton, Timothy J.; Haas, J. Patrick; Oegerle, William R. (Technical Monitor)

2002-01-01

Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest of by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

Intrapixel measurement techniques on large focal plane arrays for astronomical applications: a comparative study

NASA Astrophysics Data System (ADS)

Ketchazo, C.; Viale, T.; Boulade, O.; de la Barrière, F.; Dubreuil, D.; Mugnier, L.; Moreau, V.; Guérineau, N.; Mulet, P.; Druart, G.; Delisle, C.

2017-09-01

The intrapixel response is the signal detected by a single pixel illuminated by a Dirac distribution as a function of the position of this Dirac inside this pixel. It is also known as the pixel response function (PRF). This function measures the sensitivity variation at the subpixel scale and gives a spatial map of the sensitivity across a pixel.

Integrated Lens Antennas for Multi-Pixel Receivers

NASA Technical Reports Server (NTRS)

Lee, Choonsup; Chattopadhyay, Goutam

2011-01-01

Future astrophysics and planetary experiments are expected to require large focal plane arrays with thousands of detectors. Feedhorns have excellent performance, but their mass, size, fabrication challenges, and expense become prohibitive for very large focal plane arrays. Most planar antenna designs produce broad beam patterns, and therefore require additional elements for efficient coupling to the telescope optics, such as substrate lenses or micromachined horns. An antenna array with integrated silicon microlenses that can be fabricated photolithographically effectively addresses these issues. This approach eliminates manual assembly of arrays of lenses and reduces assembly errors and tolerances. Moreover, an antenna array without metallic horns will reduce mass of any planetary instrument significantly. The design has a monolithic array of lens-coupled, leaky-wave antennas operating in the millimeter- and submillimeter-wave frequencies. Electromagnetic simulations show that the electromagnetic fields in such lens-coupled antennas are mostly confined in approximately 12 15 . This means that one needs to design a small-angle sector lens that is much easier to fabricate using standard lithographic techniques, instead of a full hyper-hemispherical lens. Moreover, this small-angle sector lens can be easily integrated with the antennas in an array for multi-pixel imager and receiver implementation. The leaky antenna is designed using double-slot irises and fed with TE10 waveguide mode. The lens implementation starts with a silicon substrate. Photoresist with appropriate thickness (optimized for the lens size) is spun on the substrate and then reflowed to get the desired lens structure. An antenna array integrated with individual lenses for higher directivity and excellent beam profile will go a long way in realizing multi-pixel arrays and imagers. This technology will enable a new generation of compact, low-mass, and highly efficient antenna arrays for use in multi-pixel receivers and imagers for future planetary and astronomical instruments. These antenna arrays can also be used in radars and imagers for contraband detection at stand-off distances. This will be enabling technology for future balloon-borne, smaller explorer class mission (SMEX), and other missions, and for a wide range of proposed planetary sounders and radars for planetary bodies.

Modulate chopper technique used in pyroelectric uncooled focal plane array thermal imager

NASA Astrophysics Data System (ADS)

He, Yuqing; Jin, Weiqi; Liu, Guangrong; Gao, Zhiyun; Wang, Xia; Wang, Lingxue

2002-09-01

Pyroelectric uncooled focal plane array (FPA) thermal imager has the advantages of low cost, small size, high responsibility and can work under room temperature, so it has great progress in recent years. As a matched technique, the modulate chopper has become one of the key techniques in uncooled FPA thermal imaging system. Now the Archimedes spiral cord chopper technique is mostly used. When it works, the chopper pushing scans the detector's pixel array, thus makes the pixels being exposed continuously. This paper simulates the shape of this kind of chopper, analyses the exposure time of the detector's every pixel, and also analyses the whole detector pixels' exposure sequence. From the analysis we can get the results: the parameter of Archimedes spiral cord, the detector's thermal time constant, the detector's geometrical dimension, the relative position of the detector to the chopper's spiral cord are the system's important parameters, they will affect the chopper's exposure efficiency and uniformity. We should design the chopper's relevant parameter according to the practical request to achieve the chopper's appropriate structure.

Development of X-Ray Microcalorimeter Imaging Spectrometers for the X-Ray Surveyor Mission Concept

NASA Technical Reports Server (NTRS)

Bandler, Simon R.; Adams, Joseph S.; Chervenak, James A.; Datesman, Aaron M.; Eckart, Megan E.; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline A.; Betncourt-Martinez, Gabriele; Miniussi, Antoine R.;

Strong mechanical adhesion of gold electroless contacts on CdZnTe deposited by alcoholic solutions

NASA Astrophysics Data System (ADS)

Benassi, G.; Nasi, L.; Bettelli, M.; Zambelli, N.; Calestani, D.; Zappettini, A.

2017-02-01

CdZnTe crystals are nowadays employed as X-ray detectors for a number of applications, such as medical imaging, security, and environmental monitoring. One of the main difficulties connected with CdZnTe-based detector processing is the poor contact adhesion that affect bonding procedures and device long term stability. We have shown that it is possible to obtain mechanically stable contacts by common electroless deposition using alcoholic solutions instead of water solutions. The contacts show blocking current-voltage characteristic that is required for obtaining spectroscopic detectors. Nanoscale-resolved chemical analysis indicated that the improved mechanical adhesion is due to a better control of the stoichiometry of the CdZnTe layer below the contact.

Surface Passivation of CdZnTe Detector by Hydrogen Peroxide Solution Etching

NASA Technical Reports Server (NTRS)

Hayes, M.; Chen, H.; Chattopadhyay, K.; Burger, A.; James, R. B.

1998-01-01

The spectral resolution of room temperature nuclear radiation detectors such as CdZnTe is usually limited by the presence of conducting surface species that increase the surface leakage current. Studies have shown that the leakage current can be reduced by proper surface preparation. In this study, we try to optimize the performance of CdZnTe detector by etching the detector with hydrogen peroxide solution as function of concentration and etching time. The passivation effect that hydrogen peroxide introduces have been investigated by current-voltage (I-V) measurement on both parallel strips and metal-semiconductor-metal configurations. The improvements on the spectral response of Fe-55 and 241Am due to hydrogen peroxide treatment are presented and discussed.

Submillisecond X-ray photon correlation spectroscopy from a pixel array detector with fast dual gating and no readout dead-time

DOE PAGES

Zhang, Qingteng; Dufresne, Eric M.; Grybos, Pawel; ...

2016-04-19

Small-angle scattering X-ray photon correlation spectroscopy (XPCS) studies were performed using a novel photon-counting pixel array detector with dual counters for each pixel. Each counter can be read out independently from the other to ensure there is no readout dead-time between the neighboring frames. A maximum frame rate of 11.8 kHz was achieved. Results on test samples show good agreement with simple diffusion. Lastly, the potential of extending the time resolution of XPCS beyond the limit set by the detector frame rate using dual counters is also discussed.

Submillisecond X-ray photon correlation spectroscopy from a pixel array detector with fast dual gating and no readout dead-time

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Qingteng; Dufresne, Eric M.; Grybos, Pawel

Small-angle scattering X-ray photon correlation spectroscopy (XPCS) studies were performed using a novel photon-counting pixel array detector with dual counters for each pixel. Each counter can be read out independently from the other to ensure there is no readout dead-time between the neighboring frames. A maximum frame rate of 11.8 kHz was achieved. Results on test samples show good agreement with simple diffusion. Lastly, the potential of extending the time resolution of XPCS beyond the limit set by the detector frame rate using dual counters is also discussed.

Submillisecond X-ray photon correlation spectroscopy from a pixel array detector with fast dual gating and no readout dead-time.

PubMed

Zhang, Qingteng; Dufresne, Eric M; Grybos, Pawel; Kmon, Piotr; Maj, Piotr; Narayanan, Suresh; Deptuch, Grzegorz W; Szczygiel, Robert; Sandy, Alec

2016-05-01

Small-angle scattering X-ray photon correlation spectroscopy (XPCS) studies were performed using a novel photon-counting pixel array detector with dual counters for each pixel. Each counter can be read out independently from the other to ensure there is no readout dead-time between the neighboring frames. A maximum frame rate of 11.8 kHz was achieved. Results on test samples show good agreement with simple diffusion. The potential of extending the time resolution of XPCS beyond the limit set by the detector frame rate using dual counters is also discussed.

Design and fabrication of reflective spatial light modulator for high-dynamic-range wavefront control

NASA Astrophysics Data System (ADS)

Zhu, Hao; Bierden, Paul; Cornelissen, Steven; Bifano, Thomas; Kim, Jin-Hong

2004-10-01

This paper describes design and fabrication of a microelectromechanical metal spatial light modulator (SLM) integrated with complementary metal-oxide semiconductor (CMOS) electronics, for high-dynamic-range wavefront control. The metal SLM consists of a large array of piston-motion MEMS mirror segments (pixels) which can deflect up to 0.78 µm each. Both 32x32 and 150x150 arrays of the actuators (1024 and 22500 elements respectively) were fabricated onto the CMOS driver electronics and individual pixels were addressed. A new process has been developed to reduce the topography during the metal MEMS processing to fabricate mirror pixels with improved optical quality.

A 4MP high-dynamic-range, low-noise CMOS image sensor

NASA Astrophysics Data System (ADS)

Ma, Cheng; Liu, Yang; Li, Jing; Zhou, Quan; Chang, Yuchun; Wang, Xinyang

2015-03-01

In this paper we present a 4 Megapixel high dynamic range, low dark noise and dark current CMOS image sensor, which is ideal for high-end scientific and surveillance applications. The pixel design is based on a 4-T PPD structure. During the readout of the pixel array, signals are first amplified, and then feed to a low- power column-parallel ADC array which is already presented in [1]. Measurement results show that the sensor achieves a dynamic range of 96dB, a dark noise of 1.47e- at 24fps speed. The dark current is 0.15e-/pixel/s at -20oC.

Modeling Charge Collection in Detector Arrays

NASA Technical Reports Server (NTRS)

Hardage, Donna (Technical Monitor); Pickel, J. C.

2003-01-01

A detector array charge collection model has been developed for use as an engineering tool to aid in the design of optical sensor missions for operation in the space radiation environment. This model is an enhancement of the prototype array charge collection model that was developed for the Next Generation Space Telescope (NGST) program. The primary enhancements were accounting for drift-assisted diffusion by Monte Carlo modeling techniques and implementing the modeling approaches in a windows-based code. The modeling is concerned with integrated charge collection within discrete pixels in the focal plane array (FPA), with high fidelity spatial resolution. It is applicable to all detector geometries including monolithc charge coupled devices (CCDs), Active Pixel Sensors (APS) and hybrid FPA geometries based on a detector array bump-bonded to a readout integrated circuit (ROIC).

High frame-rate computational ghost imaging system using an optical fiber phased array and a low-pixel APD array.

PubMed

Liu, Chunbo; Chen, Jingqiu; Liu, Jiaxin; Han, Xiang'e

2018-04-16

To obtain a high imaging frame rate, a computational ghost imaging system scheme is proposed based on optical fiber phased array (OFPA). Through high-speed electro-optic modulators, the randomly modulated OFPA can provide much faster speckle projection, which can be precomputed according to the geometry of the fiber array and the known phases for modulation. Receiving the signal light with a low-pixel APD array can effectively decrease the requirement on sampling quantity and computation complexity owing to the reduced data dimensionality while avoiding the image aliasing due to the spatial periodicity of the speckles. The results of analysis and simulation show that the frame rate of the proposed imaging system can be significantly improved compared with traditional systems.

An inverter-based capacitive trans-impedance amplifier readout with offset cancellation and temporal noise reduction for IR focal plane array

NASA Astrophysics Data System (ADS)

Chen, Hsin-Han; Hsieh, Chih-Cheng

2013-09-01

This paper presents a readout integrated circuit (ROIC) with inverter-based capacitive trans-impedance amplifier (CTIA) and pseudo-multiple sampling technique for infrared focal plane array (IRFPA). The proposed inverter-based CTIA with a coupling capacitor [1], executing auto-zeroing technique to cancel out the varied offset voltage from process variation, is used to substitute differential amplifier in conventional CTIA. The tunable detector bias is applied from a global external bias before exposure. This scheme not only retains stable detector bias voltage and signal injection efficiency, but also reduces the pixel area as well. Pseudo-multiple sampling technique [2] is adopted to reduce the temporal noise of readout circuit. The noise reduction performance is comparable to the conventional multiple sampling operation without need of longer readout time proportional to the number of samples. A CMOS image sensor chip with 55×65 pixel array has been fabricated in 0.18um CMOS technology. It achieves a 12um×12um pixel size, a frame rate of 72 fps, a power-per-pixel of 0.66uW/pixel, and a readout temporal noise of 1.06mVrms (16 times of pseudo-multiple sampling), respectively.

Integrated sensor with frame memory and programmable resolution for light adaptive imaging

NASA Technical Reports Server (NTRS)

Zhou, Zhimin (Inventor); Fossum, Eric R. (Inventor); Pain, Bedabrata (Inventor)

2004-01-01

An image sensor operable to vary the output spatial resolution according to a received light level while maintaining a desired signal-to-noise ratio. Signals from neighboring pixels in a pixel patch with an adjustable size are added to increase both the image brightness and signal-to-noise ratio. One embodiment comprises a sensor array for receiving input signals, a frame memory array for temporarily storing a full frame, and an array of self-calibration column integrators for uniform column-parallel signal summation. The column integrators are capable of substantially canceling fixed pattern noise.

Characterization of Kilopixel TES detector arrays for PIPER

NASA Astrophysics Data System (ADS)

Datta, Rahul; Ade, Peter; Benford, Dominic; Bennett, Charles; Chuss, David; Costen, Nicholas; Coughlin, Kevin; Dotson, Jessie; Eimer, Joseph; Fixsen, Dale; Gandilo, Natalie; Halpern, Mark; Essinger-Hileman, Thomas; Hilton, Gene; Hinshaw, Gary; Irwin, Kent; Jhabvala, Christine; Kimball, Mark; Kogut, Al; Lazear, Justin; Lowe, Luke; Manos, George; McMahon, Jeff; Miller, Timothy; Mirel, Paul; Moseley, Samuel Harvey; Pawlyk, Samuel; Rodriguez, Samelys; Sharp, Elmer; Shirron, Peter; Staguhn, Johannes G.; Sullivan, Dan; Switzer, Eric; Taraschi, Peter; Tucker, Carole; Walts, Alexander; Wollack, Edward

2018-01-01

The Primordial Inflation Polarization ExploreR (PIPER) is a balloon-borne instrument optimized to measure the polarization of the Cosmic Microwave Background (CMB) at large angular scales. It will map 85% of the sky in four frequency bands centered at 200, 270, 350, and 600 GHz to characterize dust foregrounds and constrain the tensor-to-scalar ratio, r. The sky is imaged on to 32x40 pixel arrays of time-domain multiplexed Transition-Edge Sensor (TES) bolometers operating at a bath temperature of 100 mK to achieve background-limited sensitivity. Each kilopixel array is indium-bump-bonded to a 2D superconducting quantum interference device (SQUID) time-domain multiplexer (MUX) chip and read out by warm electronics. Each pixel measures total incident power over a frequency band defined by bandpass filters in front of the array, while polarization sensitivity is provided by the upstream Variable-delay Polarization Modulators (VPMs) and analyzer grids. We present measurements of the detector parameters from the laboratory characterization of the first kilopixel science array for PIPER including transition temperature, saturation power, thermal conductivity, time constant, and noise performance. We also describe the testing of the 2D MUX chips, optimization of the integrated readout parameters, and the overall pixel yield of the array. The first PIPER science flight is planned for June 2018 from Palestine, Texas.

Pixelated coatings and advanced IR coatings

NASA Astrophysics Data System (ADS)

Pradal, Fabien; Portier, Benjamin; Oussalah, Meihdi; Leplan, Hervé

2017-09-01

Reosc developed pixelated infrared coatings on detector. Reosc manufactured thick pixelated multilayer stacks on IR-focal plane arrays for bi-spectral imaging systems, demonstrating high filter performance, low crosstalk, and no deterioration of the device sensitivities. More recently, a 5-pixel filter matrix was designed and fabricated. Recent developments in pixelated coatings, shows that high performance infrared filters can be coated directly on detector for multispectral imaging. Next generation space instrument can benefit from this technology to reduce their weight and consumptions.

High-speed particle tracking in microscopy using SPAD image sensors

NASA Astrophysics Data System (ADS)

Gyongy, Istvan; Davies, Amy; Miguelez Crespo, Allende; Green, Andrew; Dutton, Neale A. W.; Duncan, Rory R.; Rickman, Colin; Henderson, Robert K.; Dalgarno, Paul A.

2018-02-01

Single photon avalanche diodes (SPADs) are used in a wide range of applications, from fluorescence lifetime imaging microscopy (FLIM) to time-of-flight (ToF) 3D imaging. SPAD arrays are becoming increasingly established, combining the unique properties of SPADs with widefield camera configurations. Traditionally, the photosensitive area (fill factor) of SPAD arrays has been limited by the in-pixel digital electronics. However, recent designs have demonstrated that by replacing the complex digital pixel logic with simple binary pixels and external frame summation, the fill factor can be increased considerably. A significant advantage of such binary SPAD arrays is the high frame rates offered by the sensors (>100kFPS), which opens up new possibilities for capturing ultra-fast temporal dynamics in, for example, life science cellular imaging. In this work we consider the use of novel binary SPAD arrays in high-speed particle tracking in microscopy. We demonstrate the tracking of fluorescent microspheres undergoing Brownian motion, and in intra-cellular vesicle dynamics, at high frame rates. We thereby show how binary SPAD arrays can offer an important advance in live cell imaging in such fields as intercellular communication, cell trafficking and cell signaling.

High Sensitivity Long-Wavelength Infrared QWIP Focal Plane Array Based Instrument for Remote Sensing of Icy Satellites

NASA Technical Reports Server (NTRS)

Gunapala, S.; Bandara, S.; Ivanov, A.

2003-01-01

GaAs based Quantum Well Infrared Photodetector (QWIP) technology has shown remarkable success in advancing low cost, highly uniform, high-operability, large format multi-color focal plane arrays. QWIPs afford greater flexibility than the usual extrinsically doped semiconductor IR detectors. The wavelength of the peak response and cutoff can be continuously tailored over a range wide enough to enable light detection at any wavelength range between 6 and 20 micron. The spectral band-width of these detectors can be tuned from narrow (Deltalambda/lambda is approximately 10%) to wide (Deltalambda/lambda is approximately 40%) allowing various applications. Furthermore, QWIPs offer low cost per pixel and highly uniform large format focal plane arrays due to mature GaAs/AlGaAs growth and processing technologies. The other advantages of GaAs/AlGaAs based QWIPS are higher yield, lower l/f noise and radiation hardness (1.5 Mrad). In this presentation, we will discuss our recent demonstrations of 640x512 pixel narrow-band, broad-band, multi-band focal plane arrays, and the current status of the development of 1024x1024 pixel long-wavelength infrared QWIP focal plane arrays.

Optical sectioning in wide-field microscopy obtained by dynamic structured light illumination and detection based on a smart pixel detector array.

PubMed

Mitić, Jelena; Anhut, Tiemo; Meier, Matthias; Ducros, Mathieu; Serov, Alexander; Lasser, Theo

2003-05-01

Optical sectioning in wide-field microscopy is achieved by illumination of the object with a continuously moving single-spatial-frequency pattern and detecting the image with a smart pixel detector array. This detector performs an on-chip electronic signal processing that extracts the optically sectioned image. The optically sectioned image is directly observed in real time without any additional postprocessing.

Microcomputer control of infrared detector arrays used in direct imaging and in Fabry-Perot spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rossano, G.S.

1989-02-01

A microcomputer based data acquisition system has been developed for astronomical observing with two-dimensional infrared detector arrays operating at high pixel rates. The system is based on a 16-bit 8086/8087 microcomputer operating at 10 MHz. Data rates of up to 560,000 pixels/sec from arrays of up to 4096 elements are supported using the microcomputer system alone. A hardware co-adder the authors are developing permits data accumulation at rates of up to 1.67 million pixels/sec in both staring and chopped data acquisition modes. The system has been used for direct imaging and for data acquisition in a Fabry-Perot Spectrometer developed bymore » NRL. The hardware is operated using interactive software which supports the several available modes of data acquisition, and permits data display and reduction during observing sessions.« less

High-speed femtosecond pump-probe spectroscopy with a smart pixel detector array.

PubMed

Bourquin, S; Prasankumar, R P; Kärtner, F X; Fujimoto, J G; Lasser, T; Salathé, R P

2003-09-01

A new femtosecond pump-probe spectroscopy technique is demonstrated that permits the high-speed, parallel acquisition of pump-probe measurements at multiple wavelengths. This is made possible by use of a novel, two-dimensional smart pixel detector array that performs amplitude demodulation in real time on each pixel. This detector array can not only achieve sensitivities comparable with lock-in amplification but also simultaneously performs demodulation of probe transmission signals at multiple wavelengths, thus permitting rapid time- and wavelength-resolved femtosecond pump-probe spectroscopy. Measurements on a thin sample of bulk GaAs are performed across 58 simultaneous wavelengths. Differential probe transmission changes as small as approximately 2 x 10(-4) can be measured over a 5-ps delay scan in only approximately 3 min. This technology can be applied to a wide range of pump-probe measurements in condensed matter, chemistry, and biology.

The Full-Scale Prototype for the Fluorescence Detector Array of Single-Pixel Telescopes

NASA Astrophysics Data System (ADS)

Fujii, T.; Malacari, M.; Bellido, J. A.; Farmer, J.; Galimova, A.; Horvath, P.; Hrabovsky, M.; Mandat, D.; Matalon, A.; Matthews, J. N.; Merolle, M.; Ni, X.; Nozka, L.; Palatka, M.; Pech, M.; Privitera, P.; Schovanek, P.; Thomas, S. B.; Travnicek, P.

The Fluorescence detector Array of Single-pixel Telescopes (FAST) is a design concept for the next generation of ultrahigh-energy cosmic ray (UHECR) observatories, addressing the requirements for a large-area, low-cost detector suitable for measuring the properties of the highest energy cosmic rays. In the FAST design, a large field of view is covered by a few pixels at the focal plane of a mirror or Fresnel lens. Motivated by the successful detection of UHECRs using a prototype comprised of a single 200 mm photomultiplier-tube and a 1 m2 Fresnel lens system, we have developed a new "full-scale" prototype consisting of four 200 mm photomultiplier-tubes at the focus of a segmented mirror of 1.6 m in diameter. We report on the status of the full-scale prototype, including test measurements made during first light operation at the Telescope Array site in central Utah, U.S.A.

Reduced-Scale Transition-Edge Sensor Detectors for Solar and X-Ray Astrophysics

NASA Technical Reports Server (NTRS)

Datesman, Aaron M.; Adams, Joseph S.; Bandler, Simon R.; Betancourt-Martinez, Gabriele L.; Chang, Meng-Ping; Chervenak, James A.; Eckart, Megan E.; Ewin, Audrey E.; Finkbeiner, Fred M.; Ha, Jong Yoon;

A programmable computational image sensor for high-speed vision

NASA Astrophysics Data System (ADS)

Yang, Jie; Shi, Cong; Long, Xitian; Wu, Nanjian

2013-08-01

In this paper we present a programmable computational image sensor for high-speed vision. This computational image sensor contains four main blocks: an image pixel array, a massively parallel processing element (PE) array, a row processor (RP) array and a RISC core. The pixel-parallel PE is responsible for transferring, storing and processing image raw data in a SIMD fashion with its own programming language. The RPs are one dimensional array of simplified RISC cores, it can carry out complex arithmetic and logic operations. The PE array and RP array can finish great amount of computation with few instruction cycles and therefore satisfy the low- and middle-level high-speed image processing requirement. The RISC core controls the whole system operation and finishes some high-level image processing algorithms. We utilize a simplified AHB bus as the system bus to connect our major components. Programming language and corresponding tool chain for this computational image sensor are also developed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kishimoto, S., E-mail: syunji.kishimoto@kek.jp; Haruki, R.; Mitsui, T.

We developed a silicon avalanche photodiode (Si-APD) linear-array detector to be used for time-resolved X-ray scattering experiments using synchrotron X-rays. The Si-APD linear array consists of 64 pixels (pixel size: 100 × 200 μm{sup 2}) with a pixel pitch of 150 μm and a depletion depth of 10 μm. The multichannel scaler counted X-ray pulses over continuous 2046 time bins for every 0.5 ns and recorded a time spectrum at each pixel with a time resolution of 0.5 ns (FWHM) for 8.0 keV X-rays. Using the detector system, we were able to observe X-ray peaks clearly separated with 2 nsmore » interval in the multibunch-mode operation of the Photon Factory ring. The small-angle X-ray scattering for polyvinylidene fluoride film was also observed with the detector.« less

CdCl2 Passivation of Polycrystalline CdMgTe and CdZnTe Absorbers for Tandem Photovoltaic Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metzger, Wyatt K; Swanson, Drew; Reich, Carey

As single-junction silicon solar cells approach their theoretical limits, tandems provide the primary path to higher efficiencies. CdTe alloys can be tuned with magnesium (CdMgTe) or zinc (CdZnTe) for ideal tandem pairing with silicon. A II-VI/Si tandem holds the greatest promise for inexpensive, high-efficiency top cells that can be quickly deployed in the market using existing polycrystalline CdTe manufacturing lines combined with mature silicon production lines. Currently, all high efficiency polycrystalline CdTe cells require a chloride-based passivation process to passivate grain boundaries and bulk defects. This research examines the rich chemistry and physics that has historically limited performance when extendingmore » Cl treatments to polycrystalline 1.7-eV CdMgTe and CdZnTe absorbers. A combination of transmittance, quantum efficiency, photoluminescence, transmission electron microscopy, and energy-dispersive X-ray spectroscopy clearly reveals that during passivation, Mg segregates and out-diffuses, initially at the grain boundaries but eventually throughout the bulk. CdZnTe exhibits similar Zn segregation behavior; however, the onset and progression is localized to the back of the device. After passivation, CdMgTe and CdZnTe can render a layer that is reduced to predominantly CdTe electro-optical behavior. Contact instabilities caused by inter-diffusion between the layers create additional complications. The results outline critical issues and paths for these materials to be successfully implemented in Si-based tandems and other applications.« less

IXO/XMS Detector Trade-Off Study

NASA Technical Reports Server (NTRS)

Kilbourne, Caroline Anne; deKorte, P.; Smith, S.; Hoevers, H.; vdKuur, J.; Ezoe, Y.; Ullom, J.

2010-01-01

This document presents the outcome of the detector trade-off for the XMS instrument on IXO. This trade-off is part of the Cryogenic instrument Phase-A study as proposed to ESA in the Declaration of Interest SRONXMS-PL-2009-003 dated June 6, 2009. The detector consists of two components: a core array for the highest spectral resolution and an outer array to increase the field of view substantially with modest increase in the number of read-out channels. Degraded resolution of the outer array in comparison with the core array is accepted in order to make this scheme possible. The two detector components may be a single unit or separate units. These arrays comprise pixels and the components that allow them to be arrayed. Each pixel comprises a thermometer, an absorber, and the thermal links between them and to the rest of the array. These links may be interfaces or distinct components. The array infrastructure comprises the mechanical structure of the array, the arrangement of the leads, and features added to improve the integrated thermal properties of the array in the focal-plane assembly.

MT3825BA: a 384×288-25µm ROIC for uncooled microbolometer FPAs

NASA Astrophysics Data System (ADS)

Eminoglu, Selim; Gulden, M. Ali; Bayhan, Nusret; Incedere, O. Samet; Soyer, S. Tuncer; Ustundag, Cem M. B.; Isikhan, Murat; Kocak, Serhat; Turan, Ozge; Yalcin, Cem; Akin, Tayfun

2014-06-01

This paper reports the development of a new microbolometer Readout Integrated Circuit (ROIC) called MT3825BA. It has a format of 384 × 288 and a pixel pitch of 25μm. MT3825BA is Mikro-Tasarim's second microbolometer ROIC product, which is developed specifically for resistive surface micro-machined microbolometer detector arrays using high-TCR pixel materials, such as VOx and a-Si. MT3825BA has a system-on-chip architecture, where all the timing, biasing, and pixel non-uniformity correction (NUC) operations in the ROIC are applied using on-chip circuitry simplifying the use and system integration of this ROIC. The ROIC is designed to support pixel resistance values ranging from 30 KΩ to 100 KΩ. MT3825BA is operated using conventional row based readout method, where pixels in the array are read out in a row-by-row basis, where the applied bias for each pixel in a given row is updated at the beginning of each line period according to the applied line based NUC data. The NUC data is applied continuously in a row-by-row basis using the serial programming interface, which is also used to program user configurable features of the ROIC, such as readout gain, integration time, and number of analog video outputs. MT3825BA has a total of 4 analog video outputs and 2 analog reference outputs, placed at the top and bottom of the ROIC, which can be programmed to operate in the 1, 2, and 4-output modes, supporting frames rates well above 60 fps at a 3 MHz pixel output rate. The pixels in the array are read out with respect to reference pixels implemented above and below actual array pixels. The bias voltage of the pixels can be programmed over a 1.0 V range to compensate for the changes in the detector resistance values due to the variations coming from the manufacturing process or changes in the operating temperature. The ROIC has an on-chip integrated temperature sensor with a sensitivity of better than 5 mV / K, and the output of the temperature sensor can be read out the output as part of the analog video stream. MT3825BA can be used to build a microbolometer FPAs with an NETD value below 100 mK using a microbolometer detector array fabrication technology with a detector resistance value up to 100 KΩ, a high TCR value (< 2 % / K), and a sufficiently low pixel thermal conductance (Gth ≤ 20 nW / K). MT3825BA measures 13.0 mm × 13.5 mm and is fabricated on 200 mm CMOS wafers. The microbolometer ROIC wafers are engineered to have flat surface finish to simplify the wafer level detector fabrication and wafer level vacuum packaging (WLVP). The ROIC runs on 3.3 V analog and 1.8 V digital supplies, and dissipates less than 85 mW in the 2-output mode at 30 fps. Mikro-Tasarim provides tested ROIC wafers and offers compact test electronics and software for its ROIC customers to shorten their FPA and camera development cycles.

Multiple-Event, Single-Photon Counting Imaging Sensor

NASA Technical Reports Server (NTRS)

Zheng, Xinyu; Cunningham, Thomas J.; Sun, Chao; Wang, Kang L.

2011-01-01

The single-photon counting imaging sensor is typically an array of silicon Geiger-mode avalanche photodiodes that are monolithically integrated with CMOS (complementary metal oxide semiconductor) readout, signal processing, and addressing circuits located in each pixel and the peripheral area of the chip. The major problem is its single-event method for photon count number registration. A single-event single-photon counting imaging array only allows registration of up to one photon count in each of its pixels during a frame time, i.e., the interval between two successive pixel reset operations. Since the frame time can t be too short, this will lead to very low dynamic range and make the sensor merely useful for very low flux environments. The second problem of the prior technique is a limited fill factor resulting from consumption of chip area by the monolithically integrated CMOS readout in pixels. The resulting low photon collection efficiency will substantially ruin any benefit gained from the very sensitive single-photon counting detection. The single-photon counting imaging sensor developed in this work has a novel multiple-event architecture, which allows each of its pixels to register as more than one million (or more) photon-counting events during a frame time. Because of a consequently boosted dynamic range, the imaging array of the invention is capable of performing single-photon counting under ultra-low light through high-flux environments. On the other hand, since the multiple-event architecture is implemented in a hybrid structure, back-illumination and close-to-unity fill factor can be realized, and maximized quantum efficiency can also be achieved in the detector array.

High Dynamic Range Imaging at the Quantum Limit with Single Photon Avalanche Diode-Based Image Sensors †

PubMed Central

Mattioli Della Rocca, Francescopaolo

2018-01-01

This paper examines methods to best exploit the High Dynamic Range (HDR) of the single photon avalanche diode (SPAD) in a high fill-factor HDR photon counting pixel that is scalable to megapixel arrays. The proposed method combines multi-exposure HDR with temporal oversampling in-pixel. We present a silicon demonstration IC with 96 × 40 array of 8.25 µm pitch 66% fill-factor SPAD-based pixels achieving >100 dB dynamic range with 3 back-to-back exposures (short, mid, long). Each pixel sums 15 bit-planes or binary field images internally to constitute one frame providing 3.75× data compression, hence the 1k frames per second (FPS) output off-chip represents 45,000 individual field images per second on chip. Two future projections of this work are described: scaling SPAD-based image sensors to HDR 1 MPixel formats and shrinking the pixel pitch to 1–3 µm. PMID:29641479

Terahertz imaging with compressive sensing

NASA Astrophysics Data System (ADS)

Chan, Wai Lam

Most existing terahertz imaging systems are generally limited by slow image acquisition due to mechanical raster scanning. Other systems using focal plane detector arrays can acquire images in real time, but are either too costly or limited by low sensitivity in the terahertz frequency range. To design faster and more cost-effective terahertz imaging systems, the first part of this thesis proposes two new terahertz imaging schemes based on compressive sensing (CS). Both schemes can acquire amplitude and phase-contrast images efficiently with a single-pixel detector, thanks to the powerful CS algorithms which enable the reconstruction of N-by- N pixel images with much fewer than N2 measurements. The first CS Fourier imaging approach successfully reconstructs a 64x64 image of an object with pixel size 1.4 mm using a randomly chosen subset of the 4096 pixels which defines the image in the Fourier plane. Only about 12% of the pixels are required for reassembling the image of a selected object, equivalent to a 2/3 reduction in acquisition time. The second approach is single-pixel CS imaging, which uses a series of random masks for acquisition. Besides speeding up acquisition with a reduced number of measurements, the single-pixel system can further cut down acquisition time by electrical or optical spatial modulation of random patterns. In order to switch between random patterns at high speed in the single-pixel imaging system, the second part of this thesis implements a multi-pixel electrical spatial modulator for terahertz beams using active terahertz metamaterials. The first generation of this device consists of a 4x4 pixel array, where each pixel is an array of sub-wavelength-sized split-ring resonator elements fabricated on a semiconductor substrate, and is independently controlled by applying an external voltage. The spatial modulator has a uniform modulation depth of around 40 percent across all pixels, and negligible crosstalk, at the resonant frequency. The second-generation spatial terahertz modulator, also based on metamaterials with a higher resolution (32x32), is under development. A FPGA-based circuit is designed to control the large number of modulator pixels. Once fully implemented, this second-generation device will enable fast terahertz imaging with both pulsed and continuous-wave terahertz sources.

Solar XUV Imaging and Non-dispersive Spectroscopy for Solar-C Enabled by Scientific CMOS APS Arrays

NASA Astrophysics Data System (ADS)

Stern, Robert A.; Lemen, J. R.; Shing, L.; Janesick, J.; Tower, J.

2009-05-01

Monolithic CMOS Advanced Pixel Sensor (APS) arrays are showing great promise as eventual replacements for the current workhorse of solar physics focal planes, the scientific CCD. CMOS APS devices have individually addressable pixels, increased radiation tolerance compared to CCDs, and require lower clock voltages, and thus lower power. However, commercially available CMOS chips, while suitable for use with intensifiers or fluorescent coatings, are generally not optimized for direct detection of EUV and X-ray photons. A high performance scientific CMOS array designed for these wavelengths will have significant new capabilities compared to CCDs, including the ability to read out small regions of the solar disk at high (sub sec) cadence, count single X-ray photons with Fano-limited energy resolution, and even operate at room temperature with good noise performance. Such capabilities will be crucial for future solar X-ray and EUV missions such as Solar-C. Sarnoff Corporation has developed scientific grade, monolithic CMOS arrays for X-ray imaging and photon counting. One prototype device, the "minimal" array, has 8 um pixels, is 15 to 25 um thick, is fabricated on high-resistivity ( 10 to 20 kohm-cm) Si wafers, and can be back-illuminated. These characteristics yield high quantum efficiency and high spatial resolution with minimal charge sharing among pixels, making it ideal for the detection of keV X-rays. When used with digital correlated double sampling, the array has demonstrated noise performance as low as 2 e, allowing single photon counting of X-rays over a range of temperatures. We report test results for this device in X-rays, and discuss the implications for future solar space missions.

A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

NASA Technical Reports Server (NTRS)

Kimble, Randy A.; Pain, B.; Norton, T. J.; Haas, P.; Fisher, Richard R. (Technical Monitor)

2001-01-01

Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution for the readout while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest or by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

High-temperature MIRAGE XL (LFRA) IRSP system development

NASA Astrophysics Data System (ADS)

McHugh, Steve; Franks, Greg; LaVeigne, Joe

2017-05-01

The development of very-large format infrared detector arrays has challenged the IR scene projector community to develop larger-format infrared emitter arrays. Many scene projector applications also require much higher simulated temperatures than can be generated with current technology. This paper will present an overview of resistive emitterbased (broadband) IR scene projector system development, as well as describe recent progress in emitter materials and pixel designs applicable for legacy MIRAGE XL Systems to achieve apparent temperatures >1000K in the MWIR. These new high temperature MIRAGE XL (LFRA) Digital Emitter Engines (DEE) will be "plug and play" equivalent with legacy MIRAGE XL DEEs, the rest of the system is reusable. Under the High Temperature Dynamic Resistive Array (HDRA) development program, Santa Barbara Infrared Inc. (SBIR) is developing a new infrared scene projector architecture capable of producing both very large format (>2k x 2k) resistive emitter arrays and improved emitter pixel technology capable of simulating very high apparent temperatures. During earlier phases of the program, SBIR demonstrated materials with MWIR apparent temperatures in excess of 1500 K. These new emitter materials can be utilized with legacy RIICs to produce pixels that can achieve 7X the radiance of the legacy systems with low cost and low risk. A 'scalable' Read-In Integrated Circuit (RIIC) is also being developed under the same HDRA program to drive the high temperature pixels. This RIIC will utilize through-silicon via (TSV) and Quilt Packaging (QP) technologies to allow seamless tiling of multiple chips to fabricate very large arrays, and thus overcome the yield limitations inherent in large-scale integrated circuits. These quilted arrays can be fabricated in any N x M size in 512 steps.

The Kepler DB: a database management system for arrays, sparse arrays, and binary data

NASA Astrophysics Data System (ADS)

McCauliff, Sean; Cote, Miles T.; Girouard, Forrest R.; Middour, Christopher; Klaus, Todd C.; Wohler, Bill

2010-07-01

The Kepler Science Operations Center stores pixel values on approximately six million pixels collected every 30 minutes, as well as data products that are generated as a result of running the Kepler science processing pipeline. The Kepler Database management system (Kepler DB)was created to act as the repository of this information. After one year of flight usage, Kepler DB is managing 3 TiB of data and is expected to grow to over 10 TiB over the course of the mission. Kepler DB is a non-relational, transactional database where data are represented as one-dimensional arrays, sparse arrays or binary large objects. We will discuss Kepler DB's APIs, implementation, usage and deployment at the Kepler Science Operations Center.

The Kepler DB, a Database Management System for Arrays, Sparse Arrays and Binary Data

NASA Technical Reports Server (NTRS)

McCauliff, Sean; Cote, Miles T.; Girouard, Forrest R.; Middour, Christopher; Klaus, Todd C.; Wohler, Bill

2010-01-01

The Kepler Science Operations Center stores pixel values on approximately six million pixels collected every 30-minutes, as well as data products that are generated as a result of running the Kepler science processing pipeline. The Kepler Database (Kepler DB) management system was created to act as the repository of this information. After one year of ight usage, Kepler DB is managing 3 TiB of data and is expected to grow to over 10 TiB over the course of the mission. Kepler DB is a non-relational, transactional database where data are represented as one dimensional arrays, sparse arrays or binary large objects. We will discuss Kepler DB's APIs, implementation, usage and deployment at the Kepler Science Operations Center.

Active pixel imagers incorporating pixel-level amplifiers based on polycrystalline-silicon thin-film transistors

PubMed Central

El-Mohri, Youcef; Antonuk, Larry E.; Koniczek, Martin; Zhao, Qihua; Li, Yixin; Street, Robert A.; Lu, Jeng-Ping

2009-01-01

Active matrix, flat-panel imagers (AMFPIs) employing a 2D matrix of a-Si addressing TFTs have become ubiquitous in many x-ray imaging applications due to their numerous advantages. However, under conditions of low exposures and∕or high spatial resolution, their signal-to-noise performance is constrained by the modest system gain relative to the electronic additive noise. In this article, a strategy for overcoming this limitation through the incorporation of in-pixel amplification circuits, referred to as active pixel (AP) architectures, using polycrystalline-silicon (poly-Si) TFTs is reported. Compared to a-Si, poly-Si offers substantially higher mobilities, enabling higher TFT currents and the possibility of sophisticated AP designs based on both n- and p-channel TFTs. Three prototype indirect detection arrays employing poly-Si TFTs and a continuous a-Si photodiode structure were characterized. The prototypes consist of an array (PSI-1) that employs a pixel architecture with a single TFT, as well as two arrays (PSI-2 and PSI-3) that employ AP architectures based on three and five TFTs, respectively. While PSI-1 serves as a reference with a design similar to that of conventional AMFPI arrays, PSI-2 and PSI-3 incorporate additional in-pixel amplification circuitry. Compared to PSI-1, results of x-ray sensitivity demonstrate signal gains of ∼10.7 and 20.9 for PSI-2 and PSI-3, respectively. These values are in reasonable agreement with design expectations, demonstrating that poly-Si AP circuits can be tailored to provide a desired level of signal gain. PSI-2 exhibits the same high levels of charge trapping as those observed for PSI-1 and other conventional arrays employing a continuous photodiode structure. For PSI-3, charge trapping was found to be significantly lower and largely independent of the bias voltage applied across the photodiode. MTF results indicate that the use of a continuous photodiode structure in PSI-1, PSI-2, and PSI-3 results in optical fill factors that are close to unity. In addition, the greater complexity of PSI-2 and PSI-3 pixel circuits, compared to that of PSI-1, has no observable effect on spatial resolution. Both PSI-2 and PSI-3 exhibit high levels of additive noise, resulting in no net improvement in the signal-to-noise performance of these early prototypes compared to conventional AMFPIs. However, faster readout rates, coupled with implementation of multiple sampling protocols allowed by the nondestructive nature of pixel readout, resulted in a significantly lower noise level of ∼560 e (rms) for PSI-3. PMID:19673229

Active pixel imagers incorporating pixel-level amplifiers based on polycrystalline-silicon thin-film transistors.

PubMed

El-Mohri, Youcef; Antonuk, Larry E; Koniczek, Martin; Zhao, Qihua; Li, Yixin; Street, Robert A; Lu, Jeng-Ping

2009-07-01

Active matrix, flat-panel imagers (AMFPIs) employing a 2D matrix of a-Si addressing TFTs have become ubiquitous in many x-ray imaging applications due to their numerous advantages. However, under conditions of low exposures and/or high spatial resolution, their signal-to-noise performance is constrained by the modest system gain relative to the electronic additive noise. In this article, a strategy for overcoming this limitation through the incorporation of in-pixel amplification circuits, referred to as active pixel (AP) architectures, using polycrystalline-silicon (poly-Si) TFTs is reported. Compared to a-Si, poly-Si offers substantially higher mobilities, enabling higher TFT currents and the possibility of sophisticated AP designs based on both n- and p-channel TFTs. Three prototype indirect detection arrays employing poly-Si TFTs and a continuous a-Si photodiode structure were characterized. The prototypes consist of an array (PSI-1) that employs a pixel architecture with a single TFT, as well as two arrays (PSI-2 and PSI-3) that employ AP architectures based on three and five TFTs, respectively. While PSI-1 serves as a reference with a design similar to that of conventional AMFPI arrays, PSI-2 and PSI-3 incorporate additional in-pixel amplification circuitry. Compared to PSI-1, results of x-ray sensitivity demonstrate signal gains of approximately 10.7 and 20.9 for PSI-2 and PSI-3, respectively. These values are in reasonable agreement with design expectations, demonstrating that poly-Si AP circuits can be tailored to provide a desired level of signal gain. PSI-2 exhibits the same high levels of charge trapping as those observed for PSI-1 and other conventional arrays employing a continuous photodiode structure. For PSI-3, charge trapping was found to be significantly lower and largely independent of the bias voltage applied across the photodiode. MTF results indicate that the use of a continuous photodiode structure in PSI-1, PSI-2, and PSI-3 results in optical fill factors that are close to unity. In addition, the greater complexity of PSI-2 and PSI-3 pixel circuits, compared to that of PSI-1, has no observable effect on spatial resolution. Both PSI-2 and PSI-3 exhibit high levels of additive noise, resulting in no net improvement in the signal-to-noise performance of these early prototypes compared to conventional AMFPIs. However, faster readout rates, coupled with implementation of multiple sampling protocols allowed by the nondestructive nature of pixel readout, resulted in a significantly lower noise level of approximately 560 e (rms) for PSI-3.

Direct formation of nano-pillar arrays by phase separation of polymer blend for the enhanced out-coupling of organic light emitting diodes with low pixel blurring.

PubMed

Lee, Cholho; Han, Kyung-Hoon; Kim, Kwon-Hyeon; Kim, Jang-Joo

2016-03-21

We have demonstrated a simple and efficient method to fabricate OLEDs with enhanced out-coupling efficiencies and with low pixel blurring by inserting nano-pillar arrays prepared through the lateral phase separation of two immiscible polymers in a blend film. By selecting a proper solvent for the polymer and controlling the composition of the polymer blend, the nano-pillar arrays were formed directly after spin-coating of the polymer blend and selective removal of one phase, needing no complicated processes such as nano-imprint lithography. Pattern size and distribution were easily controlled by changing the composition and thickness of the polymer blend film. Phosphorescent OLEDs using the internal light extraction layer containing the nano-pillar arrays showed a 30% enhancement of the power efficiency, no spectral variation with the viewing angle, and only a small increment in pixel blurring. With these advantages, this newly developed method can be adopted for the commercial fabrication process of OLEDs for lighting and display applications.

NASA's Spitzer Space Telescope's Operational Mission Experience

NASA Technical Reports Server (NTRS)

Wilson, Robert K.; Scott, Charles P.

2006-01-01

New Generation of Detector Arrays(100 to 10,000 Gain in Capability over Previous Infrared Space Missions). IRAC: 256 x 256 pixel arrays operating at 3.6 microns, 4.5 microns, 5.8 microns, 8.0 microns. MIPS: Photometer with 3 sets of arrays operating at 24 microns, 70 microns and 160 microns. 128 x 128; 32 x 32 and 2 x 20 arrays. Spectrometer with 50-100 micron capabilities. IRS: 4 Array (128x128 pixel) Spectrograph, 4 -40 microns. Warm Launch Architecture: All other Infrared Missions launched with both the telescope and scientific instrument payload within the cryostat or Dewar. Passive cooling used to cool outer shell to approx.40 K. Cryogenic Boil-off then cools telescope to required 5.5K. Earth Trailing Heliocentric Orbit: Increased observing efficiency, simplification of observation planning, removes earth as heat source.

High-resolution ionization detector and array of such detectors

DOEpatents

McGregor, Douglas S [Ypsilanti, MI; Rojeski, Ronald A [Pleasanton, CA

2001-01-16

A high-resolution ionization detector and an array of such detectors are described which utilize a reference pattern of conductive or semiconductive material to form interaction, pervious and measurement regions in an ionization substrate of, for example, CdZnTe material. The ionization detector is a room temperature semiconductor radiation detector. Various geometries of such a detector and an array of such detectors produce room temperature operated gamma ray spectrometers with relatively high resolution. For example, a 1 cm.sup.3 detector is capable of measuring .sup.137 Cs 662 keV gamma rays with room temperature energy resolution approaching 2% at FWHM. Two major types of such detectors include a parallel strip semiconductor Frisch grid detector and the geometrically weighted trapezoid prism semiconductor Frisch grid detector. The geometrically weighted detector records room temperature (24.degree. C.) energy resolutions of 2.68% FWHM for .sup.137 Cs 662 keV gamma rays and 2.45% FWHM for .sup.60 Co 1.332 MeV gamma rays. The detectors perform well without any electronic pulse rejection, correction or compensation techniques. The devices operate at room temperature with simple commercially available NIM bin electronics and do not require special preamplifiers or cooling stages for good spectroscopic results.

CMOS Active-Pixel Image Sensor With Simple Floating Gates

NASA Technical Reports Server (NTRS)

Fossum, Eric R.; Nakamura, Junichi; Kemeny, Sabrina E.

1996-01-01

Experimental complementary metal-oxide/semiconductor (CMOS) active-pixel image sensor integrated circuit features simple floating-gate structure, with metal-oxide/semiconductor field-effect transistor (MOSFET) as active circuit element in each pixel. Provides flexibility of readout modes, no kTC noise, and relatively simple structure suitable for high-density arrays. Features desirable for "smart sensor" applications.

Hierarchical Phased Array Antenna Focal Plane for Cosmic Microwave Background Polarization and Sub-mm Observations

NASA Astrophysics Data System (ADS)

Lee, Adrian

We propose to develop planar-antenna-coupled superconducting bolometer arrays for observations at sub-millimeter to millimeter wavelengths. Our pixel architecture features a dual-polarization, log-periodic antenna with a 5:1 bandwidth ratio, followed by a filter bank that divides the total bandwidth into several broad photometric bands. We propose to develop an hierarchical phased array of our basic pixel type that gives optimal mapping speed (sensitivity) over a much broader range of frequencies. The advantage of this combination of an intrinsically broadband pixel with hierarchical phase arraying include a combination of greatly reduced focal-plane mass, higher array sensitivity, and a larger number of spectral bands compared to focal-plane designs using conventional single-color pixels. These advantages have the potential to greatly reduce cost and/or increase performance of NASA missions in the sub-millimeter to millimeter bands. For CMB polarization, a wide frequency range of about 30 to 400 GHz is required to subtract galactic foregrounds. As an example, the multichroic architecture we propose could reduce the focal plane mass of the EPIC-IM CMB polarization mission study concept by a factor of 4, with great savings in required cryocooler performance and therefore cost. We have demonstrated the lens-coupled antenna concept in the POLARBEAR groundbased CMB polarization experiment which is now operating in Chile. That experiment uses a single-band planar antenna that gives excellent beam properties and optical efficiency. POLARBEAR recently succeeded in detecting gravitational lensing B-modes in the CMB polarization. In the laboratory, we have measured two octaves of total bandwidth in the log-periodic sinuous antenna. We have built filter banks of 2, 3, and 7 bands with 4, 6, and 14 bolometers per pixel for two linear polarizations. Pixels of this type are slated to be deployed on the ground in POLARBEAR and SPT-3G and proposed to be used on a balloon by EBEX-IDS and in space on the LiteBIRD CMB polarization mission. The deliverables for the proposed work include: *Fabrication and test of a sinuous-antenna-based pixel with a 5:1 total bandwidth. Separate pixels will be built that are sensitive down to 30 GHz and others that are sensitive up to 400 GHz to cover the full range required for CMB measurements and to push into the sub-mm wavelength range. The efficiency of these pixels will be maximized by introducing a low loss silicon nitride insulator layer in all of the transmission lines. *Hierarchical phased arrays that use up to five levels of arraying will be fabricated and tested. The hierarchical phased array approaches the optimal mapping speed (sensitivity) at all frequencies by adjusting the beam size of the array with frequency. *We will develop 3 and 5 layer anti-reflection coatings using a new ``thermal spray" technique that we have developed which heats ceramics and plastics to melting temperature an then sprays them on optical surfaces with excellent uniformity and thickness control. The dielectric constant of each layer can be adjusted by choosing mixing ratios of high and low dielectric constant materials. Prioritization committees including the Astro2010 decadal, Quarks to Cosmos, and Weiss Committee have strongly advocated for prioritizing Cosmic Microwave Background polarization measurements and other science goals in the mm and sub-mm wavelength regime. The technology we propose to develop has the potential to greatly increase the cost effectiveness of potential missions in this frequency range. We have assembled an experienced team that includes expertise in antenna design, RF superconducting circuits, microfabrication, and CMB observations. Our team includes detector and/or CMB observation experts Bill Holzapfel, Adrian Lee, Akito Kusaka, and Aritoki Suzuki.

Scalable gamma-ray camera for wide-area search based on silicon photomultipliers array

NASA Astrophysics Data System (ADS)

Jeong, Manhee; Van, Benjamin; Wells, Byron T.; D'Aries, Lawrence J.; Hammig, Mark D.

2018-03-01

Portable coded-aperture imaging systems based on scintillators and semiconductors have found use in a variety of radiological applications. For stand-off detection of weakly emitting materials, large volume detectors can facilitate the rapid localization of emitting materials. We describe a scalable coded-aperture imaging system based on 5.02 × 5.02 cm2 CsI(Tl) scintillator modules, each partitioned into 4 × 4 × 20 mm3 pixels that are optically coupled to 12 × 12 pixel silicon photo-multiplier (SiPM) arrays. The 144 pixels per module are read-out with a resistor-based charge-division circuit that reduces the readout outputs from 144 to four signals per module, from which the interaction position and total deposited energy can be extracted. All 144 CsI(Tl) pixels are readily distinguishable with an average energy resolution, at 662 keV, of 13.7% FWHM, a peak-to-valley ratio of 8.2, and a peak-to-Compton ratio of 2.9. The detector module is composed of a SiPM array coupled with a 2 cm thick scintillator and modified uniformly redundant array mask. For the image reconstruction, cross correlation and maximum likelihood expectation maximization methods are used. The system shows a field of view of 45° and an angular resolution of 4.7° FWHM.

Ultrahigh-frame CCD imagers

NASA Astrophysics Data System (ADS)

Lowrance, John L.; Mastrocola, V. J.; Renda, George F.; Swain, Pradyumna K.; Kabra, R.; Bhaskaran, Mahalingham; Tower, John R.; Levine, Peter A.

2004-02-01

This paper describes the architecture, process technology, and performance of a family of high burst rate CCDs. These imagers employ high speed, low lag photo-detectors with local storage at each photo-detector to achieve image capture at rates greater than 106 frames per second. One imager has a 64 x 64 pixel array with 12 frames of storage. A second imager has a 80 x 160 array with 28 frames of storage, and the third imager has a 64 x 64 pixel array with 300 frames of storage. Application areas include capture of rapid mechanical motion, optical wavefront sensing, fluid cavitation research, combustion studies, plasma research and wind-tunnel-based gas dynamics research.

Mosaic-Detector-Based Fluorescence Spectral Imager

NASA Technical Reports Server (NTRS)

Son, Kyung-Ah; Moon, Jeong

2007-01-01

A battery-powered, pen-sized, portable instrument for measuring molecular fluorescence spectra of chemical and biological samples in the field has been proposed. Molecular fluorescence spectroscopy is among the techniques used most frequently in laboratories to analyze compositions of chemical and biological samples. Heretofore, it has been possible to measure fluorescence spectra of molecular species at relative concentrations as low as parts per billion (ppb), with a few nm spectral resolution. The proposed instrument would include a planar array (mosaic) of detectors, onto which a fluorescence spectrum would be spatially mapped. Unlike in the larger laboratory-type molecular fluorescence spectrometers, mapping of wavelengths to spatial positions would be accomplished without use of relatively bulky optical parts. The proposed instrument is expected to be sensitive enough to enable measurement of spectra of chemical species at relative concentrations <1 ppb, with spectral resolution that could be tailored by design to be comparable to a laboratory molecular fluorescence spectrometer. The proposed instrument (see figure) would include a button-cell battery and a laser diode, which would generate the monochromatic ultraviolet light needed to excite fluorescence in a sample. The sample would be held in a cell bounded by far-ultraviolet-transparent quartz or optical glass. The detector array would be, more specifically, a complementary metal oxide/ semiconductor or charge-coupled- device imaging photodetector array, the photodetectors of which would be tailored to respond to light in the wavelength range of the fluorescence spectrum to be measured. The light-input face of the photodetector array would be covered with a matching checkerboard array of multilayer thin film interference filters, such that each pixel in the array would be sensitive only to light in a spectral band narrow enough so as not to overlap significantly with the band of an adjacent pixel. The wavelength interval between adjacent pixels (and, thus, the spectral resolution) would typically be chosen by design to be approximately equal to the width of the total fluorescence wavelength range of interest divided by the number of pixels. The unitary structure comprising the photodetector array overlaid with the matching filter array would be denoted a hyperspectral mosaic detector (HMD) array.

Theoretical investigation of the noise performance of active pixel imaging arrays based on polycrystalline silicon thin film transistors.

PubMed

Koniczek, Martin; Antonuk, Larry E; El-Mohri, Youcef; Liang, Albert K; Zhao, Qihua

2017-07-01

Active matrix flat-panel imagers, which typically incorporate a pixelated array with one a-Si:H thin-film transistor (TFT) per pixel, have become ubiquitous by virtue of many advantages, including large monolithic construction, radiation tolerance, and high DQE. However, at low exposures such as those encountered in fluoroscopy, digital breast tomosynthesis and breast computed tomography, DQE is degraded due to the modest average signal generated per interacting x-ray relative to electronic additive noise levels of ~1000 e, or greater. A promising strategy for overcoming this limitation is to introduce an amplifier into each pixel, referred to as the active pixel (AP) concept. Such circuits provide in-pixel amplification prior to readout as well as facilitate correlated multiple sampling, enhancing signal-to-noise and restoring DQE at low exposures. In this study, a methodology for theoretically investigating the signal and noise performance of imaging array designs is introduced and applied to the case of AP circuits based on low-temperature polycrystalline silicon (poly-Si), a semiconductor suited to manufacture of large area, radiation tolerant arrays. Computer simulations employing an analog circuit simulator and performed in the temporal domain were used to investigate signal characteristics and major sources of electronic additive noise for various pixel amplifier designs. The noise sources include photodiode shot noise and resistor thermal noise, as well as TFT thermal and flicker noise. TFT signal behavior and flicker noise were parameterized from fits to measurements performed on individual poly-Si test TFTs. The performance of three single-stage and three two-stage pixel amplifier designs were investigated under conditions relevant to fluoroscopy. The study assumes a 20 × 20 cm 2 , 150 μm pitch array operated at 30 fps and coupled to a CsI:Tl x-ray converter. Noise simulations were performed as a function of operating conditions, including sampling mode, of the designs. The total electronic additive noise included noise contributions from each circuit component. The total noise results were found to exhibit a strong dependence on circuit design and operating conditions, with TFT flicker noise generally found to be the dominant noise contributor. For the single-stage designs, significantly increasing the size of the source-follower TFT substantially reduced flicker noise - with the lowest total noise found to be ~574 e [rms]. For the two-stage designs, in addition to tuning TFT sizes and introducing a low-pass filter, replacing a p-type TFT with a resistor (under the assumption in the study that resistors make no flicker noise contribution) resulted in significant noise reduction - with the lowest total noise found to be ~336 e [rms]. A methodology based on circuit simulations which facilitates comprehensive explorations of signal and noise characteristics has been developed and applied to the case of poly-Si AP arrays. The encouraging results suggest that the electronic additive noise of such devices can be substantially reduced through judicious circuit design, signal amplification, and multiple sampling. This methodology could be extended to explore the noise performance of arrays employing other pixel circuitry such as that for photon counting as well as other semiconductor materials such as a-Si:H and a-IGZO. © 2017 American Association of Physicists in Medicine.

The Design of Optical Sensor for the Pinhole/Occulter Facility

NASA Technical Reports Server (NTRS)

Greene, Michael E.

1990-01-01

Three optical sight sensor systems were designed, built and tested. Two optical lines of sight sensor system are capable of measuring the absolute pointing angle to the sun. The system is for use with the Pinhole/Occulter Facility (P/OF), a solar hard x ray experiment to be flown from Space Shuttle or Space Station. The sensor consists of a pinhole camera with two pairs of perpendicularly mounted linear photodiode arrays to detect the intensity distribution of the solar image produced by the pinhole, track and hold circuitry for data reduction, an analog to digital converter, and a microcomputer. The deflection of the image center is calculated from these data using an approximation for the solar image. A second system consists of a pinhole camera with a pair of perpendicularly mounted linear photodiode arrays, amplification circuitry, threshold detection circuitry, and a microcomputer board. The deflection of the image is calculated by knowing the position of each pixel of the photodiode array and merely counting the pixel numbers until threshold is surpassed. A third optical sensor system is capable of measuring the internal vibration of the P/OF between the mask and base. The system consists of a white light source, a mirror and a pair of perpendicularly mounted linear photodiode arrays to detect the intensity distribution of the solar image produced by the mirror, amplification circuitry, threshold detection circuitry, and a microcomputer board. The deflection of the image and hence the vibration of the structure is calculated by knowing the position of each pixel of the photodiode array and merely counting the pixel numbers until threshold is surpassed.

Instrumentation for single-dish observations with The Greenland Telescope

NASA Astrophysics Data System (ADS)

Grimes, Paul K.; Asada, K.; Blundell, R.; Burgos, R.; Chang, H.-H.; Chen, M. T.; Goldie, D.; Groppi, C.; Han, C. C.; Ho, P. T. P.; Huang, Y. D.; Inoue, M.; Kubo, D.; Koch, P.; Leech, J.; de Lera Acedo, E.; Martin-Cocher, P.; Nishioka, H.; Nakamura, M.; Matsushita, S.; Paine, S. N.; Patel, N.; Raffin, P.; Snow, W.; Sridharan, T. K.; Srinivasan, R.; Thomas, C. N.; Tong, E.; Wang, M.-J.; Wheeler, C.; Withington, S.; Yassin, G.; Zeng, L.-Z.

2014-07-01

The Greenland Telescope project will deploy and operate a 12m sub-millimeter telescope at the highest point of the Greenland i e sheet. The Greenland Telescope project is a joint venture between the Smithsonian As- trophysical Observatory (SAO) and the Academia Sinica Institute of Astronomy and Astrophysics (ASIAA). In this paper we discuss the concepts, specifications, and science goals of the instruments being developed for single-dish observations with the Greenland Telescope, and the coupling optics required to couple both them and the mm-VLBI receivers to antenna. The project will outfit the ALMA North America prototype antenna for Arctic operations and deploy it to Summit Station,1 a NSF operated Arctic station at 3,100m above MSL on the Greenland I e Sheet. This site is exceptionally dry, and promises to be an excellent site for sub-millimeter astronomical observations. The main science goal of the Greenland Telescope is to carry out millimeter VLBI observations alongside other telescopes in Europe and the Americas, with the aim of resolving the event horizon of the super-massive black hole at the enter of M87. The Greenland Telescope will also be outfitted for single-dish observations from the millimeter-wave to Tera-hertz bands. In this paper we will discuss the proposed instruments that are currently in development for the Greenland Telescope - 350 GHz and 650 GHz heterodyne array receivers; 1.4 THz HEB array receivers and a W-band bolometric spectrometer. SAO is leading the development of two heterodyne array instruments for the Greenland Telescope, a 48- pixel, 325-375 GHz SIS array receiver, and a 4 pixel, 1.4 THz HEB array receiver. A key science goal for these instruments is the mapping of ortho and para H2D+ in old protostellar ores, as well as general mapping of CO and other transitions in molecular louds. An 8-pixel prototype module for the 350 GHz array is currently being built for laboratory and operational testing on the Greenland Telescope. Arizona State University are developing a 650 GHz 256 pixel SIS array receiver based on the KAPPa SIS mixer array technology and ASIAA are developing 1.4 THz HEB single pixel and array receivers. The University of Cambridge and SAO are collaborating on the development of the CAMbridge Emission Line Surveyor (CAMELS), a W-band `on- hip' spectrometer instrument with a spectral resolution of R ~ 3000. CAMELS will consist of two pairs of horn antennas, feeding super conducting niobium nitride filter banks read by tantalum based Kinetic Inductance Detectors.

Zn influence on the plasticity of Cdo{0.96}Zn{0.04}Te

NASA Astrophysics Data System (ADS)

Imhoff, D.; Zozime, A.; Triboulet, R.

1991-11-01

Compression tests were performed on CdTe and Cd{0.96}Zn{0.04}Te to elucidate the mechanism through which Zn inhibits dislocation formation and motion during CdTe crystal growth, thus leading to a decreasing of the dislocation density. Uniaxial deformation experiments performed with CdTe and CdZnTe at constant strain rate within a wide temperature range (0. 14;T_m le T le 0.87;T_m,;T_m = 1 365; K), have revealed a strong hardening effect of Zn within the whole temperature range. They also showed in CdZnTe a Portevin Le Chatelier effect between 770 K and 920 K confirmed by static strain aging experiments. Critical resolved shear stress (C.R.S.S.) values at T = 195; K and static strain aging results with CdZnTe point to size effect as the dominant interaction between Zn and dislocations. Thermal activation parameters were estimated in both materials. La déformation plastique a été utilisée comme approche des mécanismes par lesquels le zinc entrave le mouvement des dislocations au cours du processus de croissance cristalline de CdTe massif, réduisant ainsi la densité de dislocations. Les expériences de compression uniaxiale à vitesse constante, réalisées dans CdTe et CdZnTe entre 0,14 T_f et 0,87 T_f ont montré que le zinc est responsable d'un fort durcissement sur tout le domaine de températures étudié. Les expériences de déformation dans CdZnTe ont mis en évidence un phénomène du type Portevin Le Chatelier entre 770 K et 920 K, confirmé par des expériences de vieillissement statique. Les valeurs de scission critique tau_c à 195 K et les résultats des expériences de vieillissement statique dans CdZnTe sont compatibles avec un effet de taille dominant pour les interactions Zndislocations. Les paramètres d'activation thermique ont été estimés dans les deux matériaux.

Active pixel sensors with substantially planarized color filtering elements

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Kemeny, Sabrina E. (Inventor)

1999-01-01

A semiconductor imaging system preferably having an active pixel sensor array compatible with a CMOS fabrication process. Color-filtering elements such as polymer filters and wavelength-converting phosphors can be integrated with the image sensor.

Active Pixel Sensors: Are CCD's Dinosaurs?

NASA Technical Reports Server (NTRS)

Fossum, Eric R.

1993-01-01

Charge-coupled devices (CCD's) are presently the technology of choice for most imaging applications. In the 23 years since their invention in 1970, they have evolved to a sophisticated level of performance. However, as with all technologies, we can be certain that they will be supplanted someday. In this paper, the Active Pixel Sensor (APS) technology is explored as a possible successor to the CCD. An active pixel is defined as a detector array technology that has at least one active transistor within the pixel unit cell. The APS eliminates the need for nearly perfect charge transfer -- the Achilles' heel of CCDs. This perfect charge transfer makes CCD's radiation 'soft,' difficult to use under low light conditions, difficult to manufacture in large array sizes, difficult to integrate with on-chip electronics, difficult to use at low temperatures, difficult to use at high frame rates, and difficult to manufacture in non-silicon materials that extend wavelength response.

PRISM project optical instrument

NASA Technical Reports Server (NTRS)

Taylor, Charles R.

1994-01-01

The scientific goal of the Passively-cooled Reconnaissance of the InterStellar Medium (PRISM) project is to map the emission of molecular hydrogen at 17.035 micrometers and 28.221 micrometers. Since the atmosphere is opaque at these infrared wavelengths, an orbiting telescope is being studied. The availability of infrared focal plane arrays enables infrared imaging spectroscopy at the molecular hydrogen wavelengths. The array proposed for PRISM is 128 pixels square, with a pixel size of 75 micrometers. In order to map the sky in a period of six months, and to resolve the nearer molecular clouds, each pixel must cover 0.5 arcminutes. This sets the focal length at 51.6 cm. In order for the pixel size to be half the diameter of the central diffraction peak at 28 micrometers would require a telescope aperture of 24 cm; an aperture of 60 cm has been selected for the PRISM study for greater light gathering power.

Heavy Ion Transient Characterization of a Photobit Hardened-by-Design Active Pixel Sensor Array

NASA Technical Reports Server (NTRS)

Marshall, Paul W.; Byers, Wheaton B.; Conger, Christopher; Eid, El-Sayed; Gee, George; Jones, Michael R.; Marshall, Cheryl J.; Reed, Robert; Pickel, Jim; Kniffin, Scott

2002-01-01

This paper presents heavy ion data on the single event transient (SET) response of a Photobit active pixel sensor (APS) four quadrant test chip with different radiation tolerant designs in a standard 0.35 micron CMOS process. The physical design techniques of enclosed geometry and P-channel guard rings are used to design the four N-type active photodiode pixels as described in a previous paper. Argon transient measurements on the 256 x 256 chip array as a function of incident angle show a significant variation in the amount of charge collected as well as the charge spreading dependent on the pixel type. The results are correlated with processing and design information provided by Photobit. In addition, there is a large degree of statistical variability between individual ion strikes. No latch-up is observed up to an LET of 106 MeV/mg/sq cm.

Demosaicking algorithm for the Kodak-RGBW color filter array

NASA Astrophysics Data System (ADS)

Rafinazari, M.; Dubois, E.

2015-01-01

Digital cameras capture images through different Color Filter Arrays and then reconstruct the full color image. Each CFA pixel only captures one primary color component; the other primary components will be estimated using information from neighboring pixels. During the demosaicking algorithm, the two unknown color components will be estimated at each pixel location. Most of the demosaicking algorithms use the RGB Bayer CFA pattern with Red, Green and Blue filters. The least-Squares Luma-Chroma demultiplexing method is a state of the art demosaicking method for the Bayer CFA. In this paper we develop a new demosaicking algorithm using the Kodak-RGBW CFA. This particular CFA reduces noise and improves the quality of the reconstructed images by adding white pixels. We have applied non-adaptive and adaptive demosaicking method using the Kodak-RGBW CFA on the standard Kodak image dataset and the results have been compared with previous work.

Characterization of a 2-mm thick, 16x16 Cadmium-Zinc-Telluride Pixel Array

NASA Technical Reports Server (NTRS)

Gaskin, Jessica; Richardson, Georgia; Mitchell, Shannon; Ramsey, Brian; Seller, Paul; Sharma, Dharma

2003-01-01

The detector under study is a 2-mm-thick, 16x16 Cadmium-Zinc-Telluride pixel array with a pixel pitch of 300 microns and inter-pixel gap of 50 microns. This detector is a precursor to that which will be used at the focal plane of the High Energy Replicated Optics (HERO) telescope currently being developed at Marshall Space Flight Center. With a telescope focal length of 6 meters, the detector needs to have a spatial resolution of around 200 microns in order to take full advantage of the HERO angular resolution. We discuss to what degree charge sharing will degrade energy resolution but will improve our spatial resolution through position interpolation. In addition, we discuss electric field modeling for this specific detector geometry and the role this mapping will play in terms of charge sharing and charge loss in the detector.

The Advanced ACTPol 27/39 GHz Array

NASA Astrophysics Data System (ADS)

Simon, S. M.; Beall, J. A.; Cothard, N. F.; Duff, S. M.; Gallardo, P. A.; Ho, S. P.; Hubmayr, J.; Koopman, B. J.; McMahon, J. J.; Nati, F.; Niemack, M. D.; Staggs, S. T.; Vavagiakis, E. M.; Wollack, E. J.

2018-05-01

Advanced ACTPol (AdvACT) will observe the temperature and polarization of the cosmic microwave background (CMB) at multiple frequencies and high resolution to place improved constraints on inflation, dark matter, and dark energy. Foregrounds from synchrotron and dust radiation are a source of contamination that must be characterized and removed across a wide range of frequencies. AdvACT will thus observe at five frequency bands from 27 to 230 GHz. We discuss the design of the pixels and feedhorns for the 27/39 GHz multichroic array for AdvACT, which will target the synchrotron radiation that dominates at these frequencies. To gain 35% in mapping speed in the 39 GHz band where the foreground signals are faintest, the pixel number was increased through reducing the pixel diameter to 1.08λ at the lowest frequency, which represents a 22% decrease in size compared to our previously most tightly packed pixels.

A 10MHz Fiber-Coupled Photodiode Imaging Array for Plasma Diagnostics

NASA Astrophysics Data System (ADS)

Brockington, Samuel; Case, Andrew; Witherspoon, F. Douglas

2013-10-01

HyperV Technologies has been developing an imaging diagnostic comprised of arrays of fast, low-cost, long-record-length, fiber-optically-coupled photodiode channels to investigate plasma dynamics and other fast, bright events. By coupling an imaging fiber bundle to a bank of amplified photodiode channels, imagers and streak imagers of 100 to 10,000 pixels can be constructed. By interfacing analog photodiode systems directly to commercial analog to digital convertors and modern memory chips, a prototype pixel with an extremely deep record length (128 k points at 40 Msamples/s) has been achieved for a 10 bit resolution system with signal bandwidths of at least 10 MHz. Progress on a prototype 100 Pixel streak camera employing this technique is discussed along with preliminary experimental results and plans for a 10,000 pixel imager. Work supported by USDOE Phase 1 SBIR Grant DE-SC0009492.

High Voltage Dielectrophoretic and Magnetophoretic Hybrid Integrated Circuit / Microfluidic Chip

PubMed Central

Issadore, David; Franke, Thomas; Brown, Keith A.; Hunt, Thomas P.; Westervelt, Robert M.

2010-01-01

A hybrid integrated circuit (IC) / microfluidic chip is presented that independently and simultaneously traps and moves microscopic objects suspended in fluid using both electric and magnetic fields. This hybrid chip controls the location of dielectric objects, such as living cells and drops of fluid, on a 60 × 61 array of pixels that are 30 × 38 μm2 in size, each of which can be individually addressed with a 50 V peak-to-peak, DC to 10 MHz radio frequency voltage. These high voltage pixels produce electric fields above the chip’s surface with a magnitude , resulting in strong dielectrophoresis (DEP) forces . Underneath the array of DEP pixels there is a magnetic matrix that consists of two perpendicular sets of 60 metal wires running across the chip. Each wire can be sourced with 120 mA to trap and move magnetically susceptible objects using magnetophoresis (MP). The DEP pixel array and magnetic matrix can be used simultaneously to apply forces to microscopic objects, such as living cells or lipid vesicles, that are tagged with magnetic nanoparticles. The capabilities of the hybrid IC / microfluidic chip demonstrated in this paper provide important building blocks for a platform for biological and chemical applications. PMID:20625468

High Voltage Dielectrophoretic and Magnetophoretic Hybrid Integrated Circuit / Microfluidic Chip.

PubMed

Issadore, David; Franke, Thomas; Brown, Keith A; Hunt, Thomas P; Westervelt, Robert M

2009-12-01

A hybrid integrated circuit (IC) / microfluidic chip is presented that independently and simultaneously traps and moves microscopic objects suspended in fluid using both electric and magnetic fields. This hybrid chip controls the location of dielectric objects, such as living cells and drops of fluid, on a 60 × 61 array of pixels that are 30 × 38 μm(2) in size, each of which can be individually addressed with a 50 V peak-to-peak, DC to 10 MHz radio frequency voltage. These high voltage pixels produce electric fields above the chip's surface with a magnitude , resulting in strong dielectrophoresis (DEP) forces . Underneath the array of DEP pixels there is a magnetic matrix that consists of two perpendicular sets of 60 metal wires running across the chip. Each wire can be sourced with 120 mA to trap and move magnetically susceptible objects using magnetophoresis (MP). The DEP pixel array and magnetic matrix can be used simultaneously to apply forces to microscopic objects, such as living cells or lipid vesicles, that are tagged with magnetic nanoparticles. The capabilities of the hybrid IC / microfluidic chip demonstrated in this paper provide important building blocks for a platform for biological and chemical applications.

The Transition-Edge-Sensor Array for the Micro-X Sounding Rocket

NASA Technical Reports Server (NTRS)

Eckart, M. E.; Adams, J. S.; Bailey, C. N.; Bandler, S. R.; Busch, Sarah Elizabeth; Chervenak J. A.; Finkbeiner, F. M.; Kelley, R. L.; Kilbourne, C. A.; Porst, J. P.;

Spatiotemporal Pixelization to Increase the Recognition Score of Characters for Retinal Prostheses

PubMed Central

Kim, Hyun Seok; Park, Kwang Suk

2017-01-01

Most of the retinal prostheses use a head-fixed camera and a video processing unit. Some studies proposed various image processing methods to improve visual perception for patients. However, previous studies only focused on using spatial information. The present study proposes a spatiotemporal pixelization method mimicking fixational eye movements to generate stimulation images for artificial retina arrays by combining spatial and temporal information. Input images were sampled with a resolution that was four times higher than the number of pixel arrays. We subsampled this image and generated four different phosphene images. We then evaluated the recognition scores of characters by sequentially presenting phosphene images with varying pixel array sizes (6 × 6, 8 × 8 and 10 × 10) and stimulus frame rates (10 Hz, 15 Hz, 20 Hz, 30 Hz, and 60 Hz). The proposed method showed the highest recognition score at a stimulus frame rate of approximately 20 Hz. The method also significantly improved the recognition score for complex characters. This method provides a new way to increase practical resolution over restricted spatial resolution by merging the higher resolution image into high-frame time slots. PMID:29073735

Verification of intensity modulated profiles using a pixel segmented liquid-filled linear array.

PubMed

Pardo, J; Roselló, J V; Sánchez-Doblado, F; Gómez, F

2006-06-07

A liquid isooctane (C8H18) filled ionization chamber linear array developed for radiotherapy quality assurance, consisting of 128 pixels (each of them with a 1.7 mm pitch), has been used to acquire profiles of several intensity modulated fields. The results were compared with film measurements using the gamma test. The comparisons show a very good matching, even in high gradient dose regions. The volume-averaging effect of the pixels is negligible and the spatial resolution is enough to verify these regions. However, some mismatches between the detectors have been found in regions where low-energy scattered photons significantly contribute to the total dose. These differences are not very important (in fact, the measurements of both detectors are in agreement using the gamma test with tolerances of 3% and 3 mm in most of those regions), and may be associated with the film energy dependence. In addition, the linear array repeatability (0.27% one standard deviation) is much better than the film one ( approximately 3%). The good repeatability, small pixel size and high spatial resolution make the detector ideal for the real time profile verification of high gradient beam profiles like those present in intensity modulated radiation therapy and radiosurgery.

A CMOS active pixel sensor for retinal stimulation

NASA Astrophysics Data System (ADS)

Prydderch, Mark L.; French, Marcus J.; Mathieson, Keith; Adams, Christopher; Gunning, Deborah; Laudanski, Jonathan; Morrison, James D.; Moodie, Alan R.; Sinclair, James

2006-02-01

Degenerative photoreceptor diseases, such as age-related macular degeneration and retinitis pigmentosa, are the most common causes of blindness in the western world. A potential cure is to use a microelectronic retinal prosthesis to provide electrical stimulation to the remaining healthy retinal cells. We describe a prototype CMOS Active Pixel Sensor capable of detecting a visual scene and translating it into a train of electrical pulses for stimulation of the retina. The sensor consists of a 10 x 10 array of 100 micron square pixels fabricated on a 0.35 micron CMOS process. Light incident upon each pixel is converted into output current pulse trains with a frequency related to the light intensity. These outputs are connected to a biocompatible microelectrode array for contact to the retinal cells. The flexible design allows experimentation with signal amplitudes and frequencies in order to determine the most appropriate stimulus for the retina. Neural processing in the retina can be studied by using the sensor in conjunction with a Field Programmable Gate Array (FPGA) programmed to behave as a neural network. The sensor has been integrated into a test system designed for studying retinal response. We present the most recent results obtained from this sensor.

Optimising the multiplex factor of the frequency domain multiplexed readout of the TES-based microcalorimeter imaging array for the X-IFU instrument on the Athena x-ray observatory

NASA Astrophysics Data System (ADS)

van der Kuur, J.; Gottardi, L. G.; Akamatsu, H.; van Leeuwen, B. J.; den Hartog, R.; Haas, D.; Kiviranta, M.; Jackson, B. J.

2016-07-01

Athena is a space-based X-ray observatory intended for exploration of the hot and energetic universe. One of the science instruments on Athena will be the X-ray Integrated Field Unit (X-IFU), which is a cryogenic X-ray spectrometer, based on a large cryogenic imaging array of Transition Edge Sensors (TES) based microcalorimeters operating at a temperature of 100mK. The imaging array consists of 3800 pixels providing 2.5 eV spectral resolution, and covers a field of view with a diameter of of 5 arc minutes. Multiplexed readout of the cryogenic microcalorimeter array is essential to comply with the cooling power and complexity constraints on a space craft. Frequency domain multiplexing has been under development for the readout of TES-based detectors for this purpose, not only for the X-IFU detector arrays but also for TES-based bolometer arrays for the Safari instrument of the Japanese SPICA observatory. This paper discusses the design considerations which are applicable to optimise the multiplex factor within the boundary conditions as set by the space craft. More specifically, the interplay between the science requirements such as pixel dynamic range, pixel speed, and cross talk, and the space craft requirements such as the power dissipation budget, available bandwidth, and electromagnetic compatibility will be discussed.

Modulation transfer function of a triangular pixel array detector.

PubMed

Karimzadeh, Ayatollah

2014-07-01

The modulation transfer function (MTF) is the main parameter that is used to evaluate image quality in electro-optical systems. Detector sampling MTF in most electro-optical systems determines the cutoff frequency of the system. The MTF of the detector depends on its pixel shape. In this work, we calculated the MTF of a detector with an equilateral triangular pixel shape. Some new results were found in deriving the MTF for the equilateral triangular pixel shape.

Pulse shaping system research of CdZnTe radiation detector for high energy x-ray diagnostic

NASA Astrophysics Data System (ADS)

Li, Miao; Zhao, Mingkun; Ding, Keyu; Zhou, Shousen; Zhou, Benjie

2018-02-01

As one of the typical wide band-gap semiconductor materials, the CdZnTe material has high detection efficiency and excellent energy resolution for the hard X-ray and the Gamma ray. The generated signal of the CdZnTe detector needs to be transformed to the pseudo-Gaussian pulse with a small impulse-width to remove noise and improve the energy resolution by the following nuclear spectrometry data acquisition system. In this paper, the multi-stage pseudo-Gaussian shaping-filter has been investigated based on the nuclear electronic principle. The optimized circuit parameters were also obtained based on the analysis of the characteristics of the pseudo-Gaussian shaping-filter in our following simulations. Based on the simulation results, the falling-time of the output pulse was decreased and faster response time can be obtained with decreasing shaping-time τs-k. And the undershoot was also removed when the ratio of input resistors was set to 1 to 2.5. Moreover, a two stage sallen-key Gaussian shaping-filter was designed and fabricated by using a low-noise voltage feedback operation amplifier LMH6628. A detection experiment platform had been built by using the precise pulse generator CAKE831 as the imitated radiation pulse which was equivalent signal of the semiconductor CdZnTe detector. Experiment results show that the output pulse of the two stage pseudo-Gaussian shaping filter has minimum 200ns pulse width (FWHM), and the output pulse of each stage was well consistent with the simulation results. Based on the performance in our experiment, this multi-stage pseudo-Gaussian shaping-filter can reduce the event-lost caused by pile-up in the CdZnTe semiconductor detector and improve the energy resolution effectively.

Large format imaging arrays for the Atacama Cosmology Telescope

NASA Technical Reports Server (NTRS)

Chervenak, J. A.; Wollack, E. J.; Marraige, T.; Staggs, S.; Niemack, M.; Doriese, B.

2006-01-01

We describe progress in the fabrication, characterization, and production of detector arrays for the Atacama Cosmology Telescope (ACT). The completed ACT instrument is specified to image simultaneously at 145, 225, and 265 GHz using three 32x32 filled arrays of superconducting transition edge sensors (TES) read out with time-division-multiplexed SQUID amplifiers. We present details of the pixel design and testing including the optimization of the electrical parameters for multiplexed readout. Using geometric noise suppression and careful tuning of operation temperature and device bias resistance, the excess noise in the TES devices is balanced with detector speed for interfacing with the ACT optics. The design also accounts for practical tolerances such as transition temperature gradients and scatter that occur in the production of multiple wafers to populate fully the kilopixel cameras. We have developed an implanted absorber layer compatible with our silicon-on-insulator process that allows for tunable optical resistance with requisite on-wafer uniformity and wafer-to-wafer reproducibility. Arrays of 32 elements have been tested in the laboratory environment including electrical, optical, and multiplexed performance. Given this pixel design, optical tests and modeling are used to predict the performance of the filled array under anticipated viewing conditions. Integration of the filled array of pixels with a tuned backshort and dielectric plate in front of the array maximize absorption and the focal plane and suppress reflections. A mechanical design for the build of the full structure is completed and we report on progress toward the construction of a prototype array for first light on the ACT.

Signal dependence of inter-pixel capacitance in hybridized HgCdTe H2RG arrays for use in James Webb space telescope's NIRcam

NASA Astrophysics Data System (ADS)

Donlon, Kevan; Ninkov, Zoran; Baum, Stefi

2016-08-01

Interpixel capacitance (IPC) is a deterministic electronic coupling by which signal generated in one pixel is measured in neighboring pixels. Examination of dark frames from test NIRcam arrays corroborates earlier results and simulations illustrating a signal dependent coupling. When the signal on an individual pixel is larger, the fractional coupling to nearest neighbors is lesser than when the signal is lower. Frames from test arrays indicate a drop in average coupling from approximately 1.0% at low signals down to approximately 0.65% at high signals depending on the particular array in question. The photometric ramifications for this non-uniformity are not fully understood. This non-uniformity intro-duces a non-linearity in the current mathematical model for IPC coupling. IPC coupling has been mathematically formalized as convolution by a blur kernel. Signal dependence requires that the blur kernel be locally defined as a function of signal intensity. Through application of a signal dependent coupling kernel, the IPC coupling can be modeled computationally. This method allows for simultaneous knowledge of the intrinsic parameters of the image scene, the result of applying a constant IPC, and the result of a signal dependent IPC. In the age of sub-pixel precision in astronomy these effects must be properly understood and accounted for in order for the data to accurately represent the object of observation. Implementation of this method is done through python scripted processing of images. The introduction of IPC into simulated frames is accomplished through convolution of the image with a blur kernel whose parameters are themselves locally defined functions of the image. These techniques can be used to enhance the data processing pipeline for NIRcam.

Effect of Te inclusions in CdZnTe crystals at different temperatures

NASA Astrophysics Data System (ADS)

Hossain, A.; Bolotnikov, A. E.; Camarda, G. S.; Gul, R.; Kim, K.-H.; Cui, Y.; Yang, G.; Xu, L.; James, R. B.

2011-02-01

CdZnTe crystals often exhibit nonuniformities due to the presence of Te inclusions and dislocations. High concentrations of such defects in these crystals generally entail severe charge-trapping, a major problem in ensuring the device's satisfactory performance. In this study, we employed a high-intensity, high-spatial-resolution synchrotron x-ray beam as the ideal tool to generate charges by focusing it over the large Te inclusions, and then observing the carrier's response at room- and at low-temperatures. A high spatial 5-μm resolution raster scan revealed the fine details of the presence of extended defects, like Te inclusions and dislocations in the CdZnTe crystals. A noticeable change was observed in the efficiency of electron charge collection at low temperature (1 °C), but it was hardly altered at room-temperature.

X-ray metrology of an array of active edge pixel sensors for use at synchrotron light sources

NASA Astrophysics Data System (ADS)

Plackett, R.; Arndt, K.; Bortoletto, D.; Horswell, I.; Lockwood, G.; Shipsey, I.; Tartoni, N.; Williams, S.

2018-01-01

We report on the production and testing of an array of active edge silicon sensors as a prototype of a large array. Four Medipix3RX.1 chips were bump bonded to four single chip sized Advacam active edge n-on-n sensors. These detectors were then mounted into a 2 by 2 array and tested on B16 at Diamond Light Source with an x-ray beam spot of 2um. The results from these tests, compared with optical metrology demonstrate that this type of sensor is sensitive to the physical edge of the silicon, with only a modest loss of efficiency in the final two rows of pixels. We present the efficiency maps recorded with the microfocus beam and a sample powder diffraction measurement. These results give confidence that this sensor technology can be used effectively in larger arrays of detectors at synchrotron light sources.

Active hyperspectral imaging using a quantum cascade laser (QCL) array and digital-pixel focal plane array (DFPA) camera.

PubMed

Goyal, Anish; Myers, Travis; Wang, Christine A; Kelly, Michael; Tyrrell, Brian; Gokden, B; Sanchez, Antonio; Turner, George; Capasso, Federico

2014-06-16

We demonstrate active hyperspectral imaging using a quantum-cascade laser (QCL) array as the illumination source and a digital-pixel focal-plane-array (DFPA) camera as the receiver. The multi-wavelength QCL array used in this work comprises 15 individually addressable QCLs in which the beams from all lasers are spatially overlapped using wavelength beam combining (WBC). The DFPA camera was configured to integrate the laser light reflected from the sample and to perform on-chip subtraction of the passive thermal background. A 27-frame hyperspectral image was acquired of a liquid contaminant on a diffuse gold surface at a range of 5 meters. The measured spectral reflectance closely matches the calculated reflectance. Furthermore, the high-speed capabilities of the system were demonstrated by capturing differential reflectance images of sand and KClO₃ particles that were moving at speeds of up to 10 m/s.

Advanced Code-Division Multiplexers for Superconducting Detector Arrays

NASA Astrophysics Data System (ADS)

Irwin, K. D.; Cho, H. M.; Doriese, W. B.; Fowler, J. W.; Hilton, G. C.; Niemack, M. D.; Reintsema, C. D.; Schmidt, D. R.; Ullom, J. N.; Vale, L. R.

2012-06-01

Multiplexers based on the modulation of superconducting quantum interference devices are now regularly used in multi-kilopixel arrays of superconducting detectors for astrophysics, cosmology, and materials analysis. Over the next decade, much larger arrays will be needed. These larger arrays require new modulation techniques and compact multiplexer elements that fit within each pixel. We present a new in-focal-plane code-division multiplexer that provides multiplexing elements with the required scalability. This code-division multiplexer uses compact lithographic modulation elements that simultaneously multiplex both signal outputs and superconducting transition-edge sensor (TES) detector bias voltages. It eliminates the shunt resistor used to voltage bias TES detectors, greatly reduces power dissipation, allows different dc bias voltages for each TES, and makes all elements sufficiently compact to fit inside the detector pixel area. These in-focal plane code-division multiplexers can be combined with multi-GHz readout based on superconducting microresonators to scale to even larger arrays.

Initial astronomical results with a new 5-14 micron Si:Ga 58x62 DRO array camera

NASA Technical Reports Server (NTRS)

Gezari, Dan; Folz, Walter; Woods, Larry

1989-01-01

A new array camera system was developed using a 58 x 62 pixel Si:Ga (gallium doped silicon) DRO (direct readout) photoconductor array detector manufactured by Hughes/Santa Barbara Research Center (SBRC). The camera system is a broad band photometer designed for 5 to 14 micron imaging with large ground-based optical telescopes. In a typical application a 10 micron photon flux of about 10(exp 9) photons sec(exp -1) m(exp -2) microns(exp -1) arcsec(exp -2) is incident in the telescope focal plane, while the detector well capacity of these arrays is 10(exp 5) to 10 (exp 6) electrons. However, when the real efficiencies and operating conditions are accounted for, the 2-channel 3596 pixel array operates with about 1/2 full wells at 10 micron and 10% bandwidth with high duty cycle and no real experimental compromises.

Numerical methods for industrial vertical Bridgman growth of (Cd,Zn)Te

NASA Astrophysics Data System (ADS)

Lin, K.; Boschert, S.; Dold, P.; Benz, K. W.; Kriessl, O.; Schmidt, A.; Siebert, K. G.; Dziuk, G.

2002-04-01

This paper presents efficient numerical methods—the "inverse modeling" method and the adaptive finite element method—for optimizing the heat transport as well as for investigating the heat and mass transport under the influence of convection during crystal growth, especially near the liquid/solid interface. These methods have been applied to industrial Bridgman-furnaces for the growth of 65-75 mm diameter (Cd,Zn)Te crystals.

Development of depth encoding small animal PET detectors using dual-ended readout of pixelated scintillator arrays with SiPMs.

PubMed

Kuang, Zhonghua; Sang, Ziru; Wang, Xiaohui; Fu, Xin; Ren, Ning; Zhang, Xianming; Zheng, Yunfei; Yang, Qian; Hu, Zhanli; Du, Junwei; Liang, Dong; Liu, Xin; Zheng, Hairong; Yang, Yongfeng

2018-02-01

The performance of current small animal PET scanners is mainly limited by the detector performance and depth encoding detectors are required to develop PET scanner to simultaneously achieve high spatial resolution and high sensitivity. Among all depth encoding PET detector approaches, dual-ended readout detector has the advantage to achieve the highest depth of interaction (DOI) resolution and spatial resolution. Silicon photomultiplier (SiPM) is believed to be the photodetector of the future for PET detector due to its excellent properties as compared to the traditional photodetectors such as photomultiplier tube (PMT) and avalanche photodiode (APD). The purpose of this work is to develop high resolution depth encoding small animal PET detector using dual-ended readout of finely pixelated scintillator arrays with SiPMs. Four lutetium-yttrium oxyorthosilicate (LYSO) arrays with 11 × 11 crystals and 11.6 × 11.6 × 20 mm 3 outside dimension were made using ESR, Toray and BaSO 4 reflectors. The LYSO arrays were read out with Hamamatsu 4 × 4 SiPM arrays from both ends. The SiPM array has a pixel size of 3 × 3 mm 2 , 0.2 mm gap in between the pixels and a total active area of 12.6 × 12.6 mm 2 . The flood histograms, DOI resolution, energy resolution and timing resolution of the four detector modules were measured and compared. All crystals can be clearly resolved from the measured flood histograms of all four arrays. The BaSO 4 arrays provide the best and the ESR array provides the worst flood histograms. The DOI resolution obtained from the DOI profiles of the individual crystals of the four array is from 2.1 to 2.35 mm for events with E > 350 keV. The DOI ratio variation among crystals is bigger for the BaSO 4 arrays as compared to both the ESR and Toray arrays. The BaSO 4 arrays provide worse detector based DOI resolution. The photopeak amplitude of the Toray array had the maximum change with depth, it provides the worst energy resolution of 21.3%. The photopeak amplitude of the BaSO 4 array with 80 μm reflector almost doesn't change with depth, it provides the best energy resolution of 12.9%. A maximum timing shift of 1.37 ns to 1.61 ns among the corner and the center crystals in the four arrays was obtained due to the use of resistor network readout. A crystal based timing resolution of 0.68 ns to 0.83 ns and a detector based timing resolution of 1.26 ns to 1.45 ns were obtained for the four detector modules. Four high resolution depth encoding small animal PET detectors were developed using dual-ended readout of pixelated scintillator arrays with SiPMs. The performance results show that those detectors can be used to build a small animal PET scanner to simultaneously achieve uniform high spatial resolution and high sensitivity. © 2017 American Association of Physicists in Medicine.

Performance of the QWIP Focal Plane Arrays for NASA's Landsat Data Continuity Mission

NASA Technical Reports Server (NTRS)

Jhabvala, M.; Choi, K.; Waczynski, A.; La, A.; Sundaram, M.; Costard, E.; Jhabvala, C.; Kan, E.; Kahle, D.; Foltz, R.;

Distributed Antenna-Coupled TES for FIR Detectors Arrays

NASA Technical Reports Server (NTRS)

Day, Peter K.; Leduc, Henry G.; Dowell, C. Darren; Lee, Richard A.; Zmuidzinas, Jonas

2007-01-01

We describe a new architecture for a superconducting detector for the submillimeter and far-infrared. This detector uses a distributed hot-electron transition edge sensor (TES) to collect the power from a focal-plane-filling slot antenna array. The sensors lay directly across the slots of the antenna and match the antenna impedance of about 30 ohms. Each pixel contains many sensors that are wired in parallel as a single distributed TES, which results in a low impedance that readily matches to a multiplexed SQUID readout These detectors are inherently polarization sensitive, with very low cross-polarization response, but can also be configured to sum both polarizations. The dual-polarization design can have a bandwidth of 50The use of electron-phonon decoupling eliminates the need for micro-machining, making the focal plane much easier to fabricate than with absorber-coupled, mechanically isolated pixels. We discuss applications of these detectors and a hybridization scheme compatible with arrays of tens of thousands of pixels.

Non-invasive, transdermal, path-selective and specific glucose monitoring via a graphene-based platform

NASA Astrophysics Data System (ADS)

Lipani, Luca; Dupont, Bertrand G. R.; Doungmene, Floriant; Marken, Frank; Tyrrell, Rex M.; Guy, Richard H.; Ilie, Adelina

2018-06-01

Currently, there is no available needle-free approach for diabetics to monitor glucose levels in the interstitial fluid. Here, we report a path-selective, non-invasive, transdermal glucose monitoring system based on a miniaturized pixel array platform (realized either by graphene-based thin-film technology, or screen-printing). The system samples glucose from the interstitial fluid via electroosmotic extraction through individual, privileged, follicular pathways in the skin, accessible via the pixels of the array. A proof of principle using mammalian skin ex vivo is demonstrated for specific and `quantized' glucose extraction/detection via follicular pathways, and across the hypo- to hyper-glycaemic range in humans. Furthermore, the quantification of follicular and non-follicular glucose extraction fluxes is clearly shown. In vivo continuous monitoring of interstitial fluid-borne glucose with the pixel array was able to track blood sugar in healthy human subjects. This approach paves the way to clinically relevant glucose detection in diabetics without the need for invasive, finger-stick blood sampling.

Eclipse SteerTech liquid lenslet beam steering technology

NASA Astrophysics Data System (ADS)

Westfall, Raymond T.; Rogers, Stanley; Shannon, Kenneth C., III

2007-09-01

Eclipse SteerTech TM transmissive fluid state electrowetting technology has successfully demonstrated the ability to control the shape and position of a fluid lenslet. In its final form, the technology will incorporate a dual fluid lenslet approach capable of operating in extremely high acceleration environments. The beam steering system works on the principle of electro-wetting. A substrate is covered with a closely spaced array of, independently addressable, transparent, electrically conductive pixels utilizing Eclipse's proprietary EclipseTEC TM technology. By activating and deactivating selected EclipseTEC TM pixels in the proper sequence, the shape and position of fluid lenslets or arrays of lenslets can be dynamically changed at will. The position and shape of individual fluid lenslets may be accurately controlled on any flat, simply curved, or complex curved, transparent or reflective surface. The smaller the pixels the better control of the position and shape of the fluid lenslets. Information on the successful testing of the Eclipse SteerTech TM lenslet and discussion of its use in a de-centered lenslet array will be presented.

Analog pixel array detectors.

PubMed

Ercan, A; Tate, M W; Gruner, S M

2006-03-01

X-ray pixel array detectors (PADs) are generally thought of as either digital photon counters (DPADs) or X-ray analog-integrating pixel array detectors (APADs). Experiences with APADs, which are especially well suited for X-ray imaging experiments where transient or high instantaneous flux events must be recorded, are reported. The design, characterization and experimental applications of several APAD designs developed at Cornell University are discussed. The simplest design is a ;flash' architecture, wherein successive integrated X-ray images, as short as several hundred nanoseconds in duration, are stored in the detector chips for later off-chip digitization. Radiography experiments using a prototype flash APAD are summarized. Another design has been implemented that combines flash capability with the ability to continuously stream X-ray images at slower (e.g. milliseconds) rates. Progress is described towards radiation-hardened APADs that can be tiled to cover a large area. A mixed-mode PAD, design by combining many of the attractive features of both APADs and DPADs, is also described.

Microwave SQUID Multiplexing of Metallic Magnetic Calorimeters: Status of Multiplexer Performance and Room-Temperature Readout Electronics Development

NASA Astrophysics Data System (ADS)

Wegner, M.; Karcher, N.; Krömer, O.; Richter, D.; Ahrens, F.; Sander, O.; Kempf, S.; Weber, M.; Enss, C.

2018-02-01

To our present best knowledge, microwave SQUID multiplexing (μ MUXing) is the most suitable technique for reading out large-scale low-temperature microcalorimeter arrays that consist of hundreds or thousands of individual pixels which require a large readout bandwidth per pixel. For this reason, the present readout strategy for metallic magnetic calorimeter (MMC) arrays combining an intrinsic fast signal rise time, an excellent energy resolution, a large energy dynamic range, a quantum efficiency close to 100% as well as a highly linear detector response is based on μ MUXing. Within this paper, we summarize the state of the art in MMC μ MUXing and discuss the most recent results. This particularly includes the discussion of the performance of a 64-pixel detector array with integrated, on-chip microwave SQUID multiplexer, the progress in flux ramp modulation of MMCs as well as the status of the development of a software-defined radio-based room-temperature electronics which is specifically optimized for MMC readout.

Indium antimonide large-format detector arrays

NASA Astrophysics Data System (ADS)

Davis, Mike; Greiner, Mark

2011-06-01

Large format infrared imaging sensors are required to achieve simultaneously high resolution and wide field of view image data. Infrared sensors are generally required to be cooled from room temperature to cryogenic temperatures in less than 10 min thousands of times during their lifetime. The challenge is to remove mechanical stress, which is due to different materials with different coefficients of expansion, over a very wide temperature range and at the same time, provide a high sensitivity and high resolution image data. These challenges are met by developing a hybrid where the indium antimonide detector elements (pixels) are unconnected islands that essentially float on a silicon substrate and form a near perfect match to the silicon read-out circuit. Since the pixels are unconnected and isolated from each other, the array is reticulated. This paper shows that the front side illuminated and reticulated element indium antimonide focal plane developed at L-3 Cincinnati Electronics are robust, approach background limited sensitivity limit, and provide the resolution expected of the reticulated pixel array.

Development of a High Dynamic Range Pixel Array Detector for Synchrotrons and XFELs

NASA Astrophysics Data System (ADS)

Weiss, Joel Todd

Advances in synchrotron radiation light source technology have opened new lines of inquiry in material science, biology, and everything in between. However, x-ray detector capabilities must advance in concert with light source technology to fully realize experimental possibilities. X-ray free electron lasers (XFELs) place particularly large demands on the capabilities of detectors, and developments towards diffraction-limited storage ring sources also necessitate detectors capable of measuring very high flux [1-3]. The detector described herein builds on the Mixed Mode Pixel Array Detector (MM-PAD) framework, developed previously by our group to perform high dynamic range imaging, and the Adaptive Gain Integrating Pixel Detector (AGIPD) developed for the European XFEL by a collaboration between Deustsches Elektronen-Synchrotron (DESY), the Paul-Scherrer-Institute (PSI), the University of Hamburg, and the University of Bonn, led by Heinz Graafsma [4, 5]. The feasibility of combining adaptive gain with charge removal techniques to increase dynamic range in XFEL experiments is assessed by simulating XFEL scatter with a pulsed infrared laser. The strategy is incorporated into pixel prototypes which are evaluated with direct current injection to simulate very high incident x-ray flux. A fully functional 16x16 pixel hybrid integrating x-ray detector featuring several different pixel architectures based on the prototypes was developed. This dissertation describes its operation and characterization. To extend dynamic range, charge is removed from the integration node of the front-end amplifier without interrupting integration. The number of times this process occurs is recorded by a digital counter in the pixel. The parameter limiting full well is thereby shifted from the size of an integration capacitor to the depth of a digital counter. The result is similar to that achieved by counting pixel array detectors, but the integrators presented here are designed to tolerate a sustained flux >1011 x-rays/pixel/second. In addition, digitization of residual analog signals allows sensitivity for single x-rays or low flux signals. Pixel high flux linearity is evaluated by direct exposure to an unattenuated synchrotron source x-ray beam and flux measurements of more than 1010 9.52 keV x-rays/pixel/s are made. Detector sensitivity to small signals is evaluated and dominant sources of error are identified. These new pixels boast multiple orders of magnitude improvement in maximum sustained flux over the MM-PAD, which is capable of measuring a sustained flux in excess of 108 x-rays/pixel/second while maintaining sensitivity to smaller signals, down to single x-rays.

Plenoptic camera image simulation for reconstruction algorithm verification

NASA Astrophysics Data System (ADS)

Schwiegerling, Jim

2014-09-01

Plenoptic cameras have emerged in recent years as a technology for capturing light field data in a single snapshot. A conventional digital camera can be modified with the addition of a lenslet array to create a plenoptic camera. Two distinct camera forms have been proposed in the literature. The first has the camera image focused onto the lenslet array. The lenslet array is placed over the camera sensor such that each lenslet forms an image of the exit pupil onto the sensor. The second plenoptic form has the lenslet array relaying the image formed by the camera lens to the sensor. We have developed a raytracing package that can simulate images formed by a generalized version of the plenoptic camera. Several rays from each sensor pixel are traced backwards through the system to define a cone of rays emanating from the entrance pupil of the camera lens. Objects that lie within this cone are integrated to lead to a color and exposure level for that pixel. To speed processing three-dimensional objects are approximated as a series of planes at different depths. Repeating this process for each pixel in the sensor leads to a simulated plenoptic image on which different reconstruction algorithms can be tested.

A Detailed Look at the Performance Characteristics of the Lightning Imaging Sensor

NASA Technical Reports Server (NTRS)

Zhang, Daile; Cummins, Kenneth L.; Bitzer, Phillip; Koshak, William J.

2018-01-01

The Lightning Imaging Sensor (LIS) on board the Tropical Rainfall Measuring Mission (TRMM) effectively reached its end of life on April 15, 2015 after 17+ years of observation. Given the wealth of information in the archived LIS lightning data, and growing use of optical observations of lightning from space throughout the world, it is still of importance to better understand LIS calibration and performance characteristics. In this work, we continue our efforts to quantify the optical characteristics of the LIS pixel array, and to further characterize the detection efficiency and location accuracy of LIS. The LIS pixel array was partitioned into four quadrants, each having its own signal amplifier and digital conversion hardware. In addition, the sensor optics resulted in a decreasing sensitivity with increasing displacement from the center of the array. These engineering limitations resulted in differences in the optical emissions detected across the pixel array. Our work to date has shown a 20% increase in the count of the lightning events detected in one of the LIS quadrants, because of a lower detection threshold. In this study, we will discuss our work in progress on these limitations, and their potential impact on the group- and flash-level parameters.

A focal plane metrology system and PSF centroiding experiment

NASA Astrophysics Data System (ADS)

Li, Haitao; Li, Baoquan; Cao, Yang; Li, Ligang

2016-10-01

In this paper, we present an overview of a detector array equipment metrology testbed and a micro-pixel centroiding experiment currently under development at the National Space Science Center, Chinese Academy of Sciences. We discuss on-going development efforts aimed at calibrating the intra-/inter-pixel quantum efficiency and pixel positions for scientific grade CMOS detector, and review significant progress in achieving higher precision differential centroiding for pseudo star images in large area back-illuminated CMOS detector. Without calibration of pixel positions and intrapixel response, we have demonstrated that the standard deviation of differential centroiding is below 2.0e-3 pixels.

Characteristics of depth-sensing coplanar grid CdZnTe detectors

NASA Astrophysics Data System (ADS)

He, Zhong; Sturm, Ben W.

2005-12-01

The latest depth-sensing coplanar grid CdZnTe detectors have been tested. Two of these have dimensions 1.5×1.5×1.0 cm 3 and one is a cylindrical detector with 1.5 cm diameter and 1.0 cm length, all of them using the third-generation coplanar anode design. Energy resolutions of 2.0% and 2.4% FWHM at 662 keV γ-ray energies were obtained. Detector performance has been observed experimentally as a function of depth of the γ-ray interaction, and as a function of radial position near the anode surface. The measured results show the improvement of the third-generation anode design. Material uniformity of CdZnTe crystals manufactured by eV Products have been directly observed and compared on two 1.5×1.5×1.0 cm 3 detectors.

Low Temperature Photoluminescence Characterization of Orbitally Grown CdZnTe

NASA Technical Reports Server (NTRS)

Ritter, Timothy M.; Larson, D. J.

1998-01-01

The II-VI ternary alloy CdZnTe is a technologically important material because of its use as a lattice matched substrate for HgCdTe based devices. The increasingly stringent requirements on performance that must be met by such large area infrared detectors also necessitates a higher quality substrate. Such substrate material is typically grown using the Bridgman technique. Due to the nature of bulk semiconductor growth, gravitationally dependent phenomena can adversely affect crystalline quality. The most direct way to alleviate this problem is by crystal growth in a reduced gravity environment. Since it requires hours, even days, to grow a high quality crystal, an orbiting space shuttle or space station provides a superb platform on which to conduct such research. For well over ten years NASA has been studying the effects of microgravity semiconductor crystal growth. This paper reports the results of photoluminescence characterization performed on an arbitrary grown CdZnTe bulk crystal.

Segregation formation, thermal and electronic properties of ternary cubic CdZnTe clusters: MD simulations and DFT calculations

NASA Astrophysics Data System (ADS)

Kurban, Mustafa; Erkoç, Şakir

2017-04-01

Surface and core formation, thermal and electronic properties of ternary cubic CdZnTe clusters are investigated by using classical molecular dynamics (MD) simulations and density functional theory (DFT) calculations. In this work, MD simulations of the CdZnTe clusters are performed by means of LAMMPS by using bond order potential (BOP). MD simulations are carried out at different temperatures to study the segregation phenomena of Cd, Zn and Te atoms, and deviation of clusters and heat capacity. After that, using optimized geometries obtained, excess charge on atoms, dipole moments, highest occupied molecular orbitals, lowest unoccupied molecular orbitals, HOMO-LUMO gaps (Eg) , total energies, spin density and the density of states (DOS) have been calculated with DFT. Simulation results such as heat capacity and segregation formation are compared with experimental bulk and theoretical results.

Development of HgCdTe large format MBE arrays and noise-free high speed MOVPE EAPD arrays for ground based NIR astronomy

NASA Astrophysics Data System (ADS)

Finger, G.; Baker, I.; Downing, M.; Alvarez, D.; Ives, D.; Mehrgan, L.; Meyer, M.; Stegmeier, J.; Weller, H. J.

2017-11-01

Large format near infrared HgCdTe 2Kx2K and 4Kx4K MBE arrays have reached a level of maturity which meets most of the specifications required for near infrared (NIR) astronomy. The only remaining problem is the persistence effect which is device specific and not yet fully under control. For ground based multi-object spectroscopy on 40 meter class telescopes larger pixels would be advantageous. For high speed near infrared fringe tracking and wavefront sensing the only way to overcome the CMOS noise barrier is the amplification of the photoelectron signal inside the infrared pixel by means of the avalanche gain. A readout chip for a 320x256 pixel HgCdTe eAPD array will be presented which has 32 parallel video outputs being arranged in such a way that the full multiplex advantage is also available for small sub-windows. In combination with the high APD gain this allows reducing the readout noise to the subelectron level by applying nondestructive readout schemes with subpixel sampling. Arrays grown by MOVPE achieve subelectron readout noise and operate with superb cosmetic quality at high APD gain. Efforts are made to reduce the dark current of those arrays to make this technology also available for large format focal planes of NIR instruments offering noise free detectors for deep exposures. The dark current of the latest MOVPE eAPD arrays is already at a level adequate for noiseless broad and narrow band imaging in scientific instruments.

Fast, High-Precision Readout Circuit for Detector Arrays

NASA Technical Reports Server (NTRS)

Rider, David M.; Hancock, Bruce R.; Key, Richard W.; Cunningham, Thomas J.; Wrigley, Chris J.; Seshadri, Suresh; Sander, Stanley P.; Blavier, Jean-Francois L.

2013-01-01

The GEO-CAPE mission described in NASA's Earth Science and Applications Decadal Survey requires high spatial, temporal, and spectral resolution measurements to monitor and characterize the rapidly changing chemistry of the troposphere over North and South Americas. High-frame-rate focal plane arrays (FPAs) with many pixels are needed to enable such measurements. A high-throughput digital detector readout integrated circuit (ROIC) that meets the GEO-CAPE FPA needs has been developed, fabricated, and tested. The ROIC is based on an innovative charge integrating, fast, high-precision analog-to-digital circuit that is built into each pixel. The 128×128-pixel ROIC digitizes all 16,384 pixels simultaneously at frame rates up to 16 kHz to provide a completely digital output on a single integrated circuit at an unprecedented rate of 262 million pixels per second. The approach eliminates the need for off focal plane electronics, greatly reducing volume, mass, and power compared to conventional FPA implementations. A focal plane based on this ROIC will require less than 2 W of power on a 1×1-cm integrated circuit. The ROIC is fabricated of silicon using CMOS technology. It is designed to be indium bump bonded to a variety of detector materials including silicon PIN diodes, indium antimonide (InSb), indium gallium arsenide (In- GaAs), and mercury cadmium telluride (HgCdTe) detector arrays to provide coverage over a broad spectral range in the infrared, visible, and ultraviolet spectral ranges.

Amorphous silicon thin film transistor active-matrix organic light-emitting diode displays fabricated on flexible substrates

NASA Astrophysics Data System (ADS)

Nichols, Jonathan A.

Organic light-emitting diode (OLED) displays are of immense interest because they have several advantages over liquid crystal displays, the current dominant flat panel display technology. OLED displays are emissive and therefore are brighter, have a larger viewing angle, and do not require backlights and filters, allowing thinner, lighter, and more power efficient displays. The goal of this work was to advance the state-of-the-art in active-matrix OLED display technology. First, hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) active-matrix OLED pixels and arrays were designed and fabricated on glass substrates. The devices operated at low voltages and demonstrated that lower performance TFTs could be utilized in active-matrix OLED displays, possibly allowing lower cost processing and the use of polymeric substrates. Attempts at designing more control into the display at the pixel level were also made. Bistable (one bit gray scale) active-matrix OLED pixels and arrays were designed and fabricated. Such pixels could be used in novel applications and eventually help reduce the bandwidth requirements in high-resolution and large-area displays. Finally, a-Si:H TFT active-matrix OLED pixels and arrays were fabricated on a polymeric substrate. Displays fabricated on a polymeric substrates would be lightweight; flexible, more rugged, and potentially less expensive to fabricate. Many of the difficulties associated with fabricating active-matrix backplanes on flexible substrates were studied and addressed.

IR detectors for the Infrared Atmospheric Sounding Interferometer (IASI) instrument payload for the METOP-1 ESA polar platform

NASA Astrophysics Data System (ADS)

Royer, Michel; Lorans, Dominique; Bischoff, Isabelle; Giotta, Dominique; Wolny, Michel

1994-12-01

IASI is an Infrared Atmospheric Sounding Interferometer devoted to the operational meteorology and to atmospheric studies and is to be installed on board the second ESA Polar Platform called METOP-1, planned to be launched in the year 2000. The main purpose of this high performance instrument is to record temperature and humidity profiles. The required lifetime is 4 years. This paper presents the characteristics of the LW IR detection arrays for the IASI spectrometer which consist of HgCdTe de- tectors. SAT has to develop the Engineering Model, Qualification Model and Fight Models of detectors, each having 4 pixels and AR-coated microlenses in a dedicated space housing equipped with a flexible line and a connector. An array is composed of HgCdTe photoconductive detectors. For this long wavelength the array is sensitive from 8.26 micrometers to 15.5 micrometers . The detectors, with sensitive areas of 900 x 900 micrometers 2, are 100 K operating with passive cooling. High quality HgCdTe material is a key feature for the manufacturing of high performance photoconductive detectors. Therefore epitaxial HgCdTe layers are used in this project. These epilayers are grown at CEA/LETI on lattice matched CdZnTe substrates, by Te-rich liquid phase epitaxy, based on a slider technique. The Cd content in the layer is carefully adjusted to meet the required cut off wavelength on the devices. After growth of the epilayers, the samples are annealed under Hg pressure in order to convert them into N type mate- rials. The electrical transport properties of the liquid phase epitaxied wafers are, at 100 K, mobility (mu) over 150,000 cm2/V.s and electrical concentration N of 1.5 1015 cm-3, the residual doping level being 1014 cm-3 at low temperature. On these materials the feasibility study of long wavelength HgCdTe photoconductors has been achieved with the following results: the responsivity is 330 V/W. The bias voltage is Vp=300 mV for a 4 mW limitation of power for each element. The resistance of an element is around 30 (Omega) .The detectivity is: D* at (lambda) pic (FOV, F, (Delta) F)=2x1010 cm HZ1/2W-1 and NEP=0.5 nW. Measurements are made under Earth observing flux corresponding to the conditions of the PPF sun-synchronous orbit.

Superconducting Bolometer Array Architectures

NASA Technical Reports Server (NTRS)

Benford, Dominic; Chervenak, Jay; Irwin, Kent; Moseley, S. Harvey; Shafer, Rick; Staguhn, Johannes; Wollack, Ed; Oegerle, William (Technical Monitor)

2002-01-01

The next generation of far-infrared and submillimeter instruments require large arrays of detectors containing thousands of elements. These arrays will necessarily be multiplexed, and superconducting bolometer arrays are the most promising present prospect for these detectors. We discuss our current research into superconducting bolometer array technologies, which has recently resulted in the first multiplexed detections of submillimeter light and the first multiplexed astronomical observations. Prototype arrays containing 512 pixels are in production using the Pop-Up Detector (PUD) architecture, which can be extended easily to 1000 pixel arrays. Planar arrays of close-packed bolometers are being developed for the GBT (Green Bank Telescope) and for future space missions. For certain applications, such as a slewed far-infrared sky survey, feedhorncoupling of a large sparsely-filled array of bolometers is desirable, and is being developed using photolithographic feedhorn arrays. Individual detectors have achieved a Noise Equivalent Power (NEP) of -10(exp 17) W/square root of Hz at 300mK, but several orders of magnitude improvement are required and can be reached with existing technology. The testing of such ultralow-background detectors will prove difficult, as this requires optical loading of below IfW. Antenna-coupled bolometer designs have advantages for large format array designs at low powers due to their mode selectivity.

Compressive spectral testbed imaging system based on thin-film color-patterned filter arrays.

PubMed

Rueda, Hoover; Arguello, Henry; Arce, Gonzalo R

2016-11-20

Compressive spectral imaging systems can reliably capture multispectral data using far fewer measurements than traditional scanning techniques. In this paper, a thin-film patterned filter array-based compressive spectral imager is demonstrated, including its optical design and implementation. The use of a patterned filter array entails a single-step three-dimensional spatial-spectral coding on the input data cube, which provides higher flexibility on the selection of voxels being multiplexed on the sensor. The patterned filter array is designed and fabricated with micrometer pitch size thin films, referred to as pixelated filters, with three different wavelengths. The performance of the system is evaluated in terms of references measured by a commercially available spectrometer and the visual quality of the reconstructed images. Different distributions of the pixelated filters, including random and optimized structures, are explored.

High-speed X-ray imaging pixel array detector for synchrotron bunch isolation

DOE PAGES

Philipp, Hugh T.; Tate, Mark W.; Purohit, Prafull; ...

2016-01-28

A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8–12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10–100 ps) and intense X-ray pulses atmore » megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. Lastly, we detail the characteristics, operation, testing and application of the detector.« less

High-speed X-ray imaging pixel array detector for synchrotron bunch isolation

PubMed Central

Philipp, Hugh T.; Tate, Mark W.; Purohit, Prafull; Shanks, Katherine S.; Weiss, Joel T.; Gruner, Sol M.

2016-01-01

A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8–12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10–100 ps) and intense X-ray pulses at megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. The characteristics, operation, testing and application of the detector are detailed. PMID:26917125

High-speed X-ray imaging pixel array detector for synchrotron bunch isolation.

PubMed

Philipp, Hugh T; Tate, Mark W; Purohit, Prafull; Shanks, Katherine S; Weiss, Joel T; Gruner, Sol M

2016-03-01

A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8-12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10-100 ps) and intense X-ray pulses at megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. The characteristics, operation, testing and application of the detector are detailed.

Design and realization of 144 x 7 TDI ROIC with hybrid integrated test structure

NASA Astrophysics Data System (ADS)

Ceylan, Omer; Kayahan, Huseyin; Yazici, Melik; Baran, Muhammet Burak; Gurbuz, Yasar

2012-06-01

Design and realization of a 144x7 silicon readout integrated circuit (ROIC) based on switched capacitor TDI for MCT LWIR scanning type focal plane arrays (FPAs) and its corresponding hybrid integrated test circuits are presented. TDI operation with 7 detectors improves the SNR of the system by a factor of √7, while oversampling rate of 3 improves the spatial resolution of the system. ROIC supports bidirectional scan, 5 adjustable gain settings, bypass operation, automatic gain adjustment in case of mulfunctioning pixels and pixel select/deselect properties. Integration time of the system can be determined by the help of an external clock. Programming of ROIC can be done in parallel or serial mode according to the needs of the system. All properties except pixel select/deselect property can be performed in parallel mode, while pixel select/deselect property can be performed only in serial mode. ROIC can handle up to 3.75V dynamic range with a load of 25pF and output settling time of 80ns. Input referred noise of the ROIC is less than 750 rms electrons, while the power consumption is less than 100mW. To test ROIC in absence of detector array, a process and temperature compensated current reference array, which supplies uniform input current in range of 1-50nA to ROIC, is designed and measured both in room and cryogenic (77ºK) temperatures. Standard deviations of current reference arrays are measured 3.26% for 1nA and 0.99% for 50nA. ROIC and current reference array are fabricated seperately, and then flip-chip bonded for the test of the system. Flip-chip bonded system including ROIC and current reference test array is successfully measured both in room and cryogenic temperatures, and measurement results are presented. The manufacturing technology is 0.35μm, double poly-Si, four metal, 5V CMOS process.

Evaluation and display of polarimetric image data using long-wave cooled microgrid focal plane arrays

NASA Astrophysics Data System (ADS)

Bowers, David L.; Boger, James K.; Wellems, L. David; Black, Wiley T.; Ortega, Steve E.; Ratliff, Bradley M.; Fetrow, Matthew P.; Hubbs, John E.; Tyo, J. Scott

2006-05-01

Recent developments for Long Wave InfraRed (LWIR) imaging polarimeters include incorporating a microgrid polarizer array onto the focal plane array (FPA). Inherent advantages over typical polarimeters include packaging and instantaneous acquisition of thermal and polarimetric information. This allows for real time video of thermal and polarimetric products. The microgrid approach has inherent polarization measurement error due to the spatial sampling of a non-uniform scene, residual pixel to pixel variations in the gain corrected responsivity and in the noise equivalent input (NEI), and variations in the pixel to pixel micro-polarizer performance. The Degree of Linear Polarization (DoLP) is highly sensitive to these parameters and is consequently used as a metric to explore instrument sensitivities. Image processing and fusion techniques are used to take advantage of the inherent thermal and polarimetric sensing capability of this FPA, providing additional scene information in real time. Optimal operating conditions are employed to improve FPA uniformity and sensitivity. Data from two DRS Infrared Technologies, L.P. (DRS) microgrid polarizer HgCdTe FPAs are presented. One FPA resides in a liquid nitrogen (LN2) pour filled dewar with a 80°K nominal operating temperature. The other FPA resides in a cryogenic (cryo) dewar with a 60° K nominal operating temperature.

CMOS minimal array

NASA Astrophysics Data System (ADS)

Janesick, James; Cheng, John; Bishop, Jeanne; Andrews, James T.; Tower, John; Walker, Jeff; Grygon, Mark; Elliot, Tom

2006-08-01

A high performance prototype CMOS imager is introduced. Test data is reviewed for different array formats that utilize 3T photo diode, 5T pinned photo diode and 6T photo gate CMOS pixel architectures. The imager allows several readout modes including progressive scan, snap and windowed operation. The new imager is built on different silicon substrates including very high resistivity epitaxial wafers for deep depletion operation. Data products contained in this paper focus on sensor's read noise, charge capacity, charge transfer efficiency, thermal dark current, RTS dark spikes, QE, pixel cross- talk and on-chip analog circuitry performance.

Development and test of an active pixel sensor detector for heliospheric imager on solar orbiter and solar probe plus

NASA Astrophysics Data System (ADS)

Korendyke, Clarence M.; Vourlidas, Angelos; Plunkett, Simon P.; Howard, Russell A.; Wang, Dennis; Marshall, Cheryl J.; Waczynski, Augustyn; Janesick, James J.; Elliott, Thomas; Tun, Samuel; Tower, John; Grygon, Mark; Keller, David; Clifford, Gregory E.

2013-10-01

The Naval Research Laboratory is developing next generation CMOS imaging arrays for the Solar Orbiter and Solar Probe Plus missions. The device development is nearly complete with flight device delivery scheduled for summer of 2013. The 4Kx4K mosaic array with 10micron pixels is well suited to the panoramic imaging required for the Solar Orbiter mission. The devices are robust (<100krad) and exhibit minimal performance degradation with respect to radiation. The device design and performance are described.

Preliminary performances measured on a CMOS long linear array for space application

NASA Astrophysics Data System (ADS)

Renard, Christophe; Artinian, Armand; Dantes, Didier; Lepage, Gérald; Diels, Wim

2017-11-01

This paper presents the design and the preliminary performances of a CMOS linear array, resulting from collaboration between Alcatel Alenia Space and Cypress Semiconductor BVBA, which takes advantage of emerging potentialities of CMOS technologies. The design of the sensor is presented: it includes 8000 panchromatic pixels with up to 25 rows used in TDI mode, and 4 lines of 2000 pixels for multispectral imaging. Main system requirements and detector tradeoffs are recalled, and the preliminary test results obtained with a first generation prototype are summarized and compared with predicted performances.

Thermodynamics of post-growth annealing of cadmium zinc telluride nuclear radiation detectors

NASA Astrophysics Data System (ADS)

Adams, Aaron Lee

Nuclear Radiation Detectors are used for detecting, tracking, and identifying radioactive materials which emit high-energy gamma and X-rays. The use of Cadmium Zinc Telluride (CdZnTe) detectors is particularly attractive because of the detector's ability to operate at room temperature and measure the energy spectra of gamma-ray sources with a high resolution, typically less than 1% at 662 keV. While CdZnTe detectors are acceptable imperfections in the crystals limit their full market potential. One of the major imperfections are Tellurium inclusions generated during the crystal growth process by the retrograde solubility of Tellurium and Tellurium-rich melt trapped at the growth interface. Tellurium inclusions trap charge carriers generated by gamma and X-ray photons and thus reduce the portion of generated charge carriers that reach the electrodes for collection and conversion into a readable signal which is representative of the ionizing radiation's energy and intensity. One approach in resolving this problem is post-growth annealing which has the potential of removing the Tellurium inclusions and associated impurities. The goal of this project is to use experimental techniques to study the thermodynamics of Tellurium inclusion migration in post-growth annealing of CdZnTe nuclear detectors with the temperature gradient zone migration (TGZM) technique. Systematic experiments will be carried out to provide adequate thermodynamic data that will inform the engineering community of the optimum annealing parameters. Additionally, multivariable correlations that involve the Tellurium diffusion coefficient, annealing parameters, and CdZnTe properties will be analyzed. The experimental approach will involve systematic annealing experiments (in Cd vapor overpressure) on different sizes of CdZnTe crystals at varying temperature gradients ranging from 0 to 60°C/mm (used to migrate the Tellurium inclusion to one side of the crystal), and at annealing temperatures ranging from 500 to 800°C. The characterization techniques that will be used to quantify the effects of the post-growth annealing experiments include: 1) 3D infrared transmission microscopy to measure the size, distribution, and concentration of Tellurium inclusions; 2) current-voltage measurements to determine the effect of post-growth annealing on the resistivity of CdZnTe crystals; and 3) X-ray diffraction topography, available at the National Synchrotron Light Source (NSLS) facilities at Brookhaven National Laboratory (BNL), to measure the correlation between device performance and annealing conditions

Mapping Electrical Crosstalk in Pixelated Sensor Arrays

NASA Technical Reports Server (NTRS)

Seshadri, S.; Cole, D. M.; Hancock, B. R.; Smith, R. M.

2008-01-01

Electronic coupling effects such as Inter-Pixel Capacitance (IPC) affect the quantitative interpretation of image data from CMOS, hybrid visible and infrared imagers alike. Existing methods of characterizing IPC do not provide a map of the spatial variation of IPC over all pixels. We demonstrate a deterministic method that provides a direct quantitative map of the crosstalk across an imager. The approach requires only the ability to reset single pixels to an arbitrary voltage, different from the rest of the imager. No illumination source is required. Mapping IPC independently for each pixel is also made practical by the greater S/N ratio achievable for an electrical stimulus than for an optical stimulus, which is subject to both Poisson statistics and diffusion effects of photo-generated charge. The data we present illustrates a more complex picture of IPC in Teledyne HgCdTe and HyViSi focal plane arrays than is presently understood, including the presence of a newly discovered, long range IPC in the HyViSi FPA that extends tens of pixels in distance, likely stemming from extended field effects in the fully depleted substrate. The sensitivity of the measurement approach has been shown to be good enough to distinguish spatial structure in IPC of the order of 0.1%.

Spatial optical crosstalk in CMOS image sensors integrated with plasmonic color filters.

PubMed

Yu, Yan; Chen, Qin; Wen, Long; Hu, Xin; Zhang, Hui-Fang

2015-08-24

Imaging resolution of complementary metal oxide semiconductor (CMOS) image sensor (CIS) keeps increasing to approximately 7k × 4k. As a result, the pixel size shrinks down to sub-2μm, which greatly increases the spatial optical crosstalk. Recently, plasmonic color filter was proposed as an alternative to conventional colorant pigmented ones. However, there is little work on its size effect and the spatial optical crosstalk in a model of CIS. By numerical simulation, we investigate the size effect of nanocross array plasmonic color filters and analyze the spatial optical crosstalk of each pixel in a Bayer array of a CIS with a pixel size of 1μm. It is found that the small pixel size deteriorates the filtering performance of nanocross color filters and induces substantial spatial color crosstalk. By integrating the plasmonic filters in the low Metal layer in standard CMOS process, the crosstalk reduces significantly, which is compatible to pigmented filters in a state-of-the-art backside illumination CIS.

Modulation Transfer Function of Infrared Focal Plane Arrays

NASA Technical Reports Server (NTRS)

Gunapala, S. D.; Rafol, S. B.; Ting, D. Z.; Soibel, A.; Hill, C. J.; Khoshakhlagh, A.; Liu, J. K.; Mumolo, J. M.; Hoglund, L.; Luong, E. M.

2015-01-01

Modulation transfer function (MTF) is the ability of an imaging system to faithfully image a given object. The MTF of an imaging system quantifies the ability of the system to resolve or transfer spatial frequencies. In this presentation we will discuss the detail MTF measurements of 1024x1024 pixels mid -wavelength and long- wavelength quantum well infrared photodetector, and 320x256 pixels long- wavelength InAs/GaSb superlattice infrared focal plane arrays (FPAs). Long wavelength Complementary Barrier Infrared Detector (CBIRD) based on InAs/GaSb superlattice material is hybridized to recently designed and fabricated 320x256 pixel format ROIC. The n-type CBIRD was characterized in terms of performance and thermal stability. The experimentally measured NE delta T of the 8.8 micron cutoff n-CBIRD FPA was 18.6 mK with 300 K background and f/2 cold stop at 78K FPA operating temperature. The horizontal and vertical MTFs of this pixel fully delineated CBIRD FPA at Nyquist frequency are 49% and 52%, respectively.

A 128×96 Pixel Stack-Type Color Image Sensor: Stack of Individual Blue-, Green-, and Red-Sensitive Organic Photoconductive Films Integrated with a ZnO Thin Film Transistor Readout Circuit

NASA Astrophysics Data System (ADS)

Seo, Hokuto; Aihara, Satoshi; Watabe, Toshihisa; Ohtake, Hiroshi; Sakai, Toshikatsu; Kubota, Misao; Egami, Norifumi; Hiramatsu, Takahiro; Matsuda, Tokiyoshi; Furuta, Mamoru; Hirao, Takashi

2011-02-01

A color image was produced by a vertically stacked image sensor with blue (B)-, green (G)-, and red (R)-sensitive organic photoconductive films, each having a thin-film transistor (TFT) array that uses a zinc oxide (ZnO) channel to read out the signal generated in each organic film. The number of the pixels of the fabricated image sensor is 128×96 for each color, and the pixel size is 100×100 µm2. The current on/off ratio of the ZnO TFT is over 106, and the B-, G-, and R-sensitive organic photoconductive films show excellent wavelength selectivity. The stacked image sensor can produce a color image at 10 frames per second with a resolution corresponding to the pixel number. This result clearly shows that color separation is achieved without using any conventional color separation optical system such as a color filter array or a prism.

Optical and x-ray characterization of two novel CMOS image sensors

NASA Astrophysics Data System (ADS)

Bohndiek, Sarah E.; Arvanitis, Costas D.; Venanzi, Cristian; Royle, Gary J.; Clark, Andy T.; Crooks, Jamie P.; Prydderch, Mark L.; Turchetta, Renato; Blue, Andrew; Speller, Robert D.

2007-02-01

A UK consortium (MI3) has been founded to develop advanced CMOS pixel designs for scientific applications. Vanilla, a 520x520 array of 25μm pixels benefits from flushed reset circuitry for low noise and random pixel access for region of interest (ROI) readout. OPIC, a 64x72 test structure array of 30μm digital pixels has thresholding capabilities for sparse readout at 3,700fps. Characterization is performed with both optical illumination and x-ray exposure via a scintillator. Vanilla exhibits 34+/-3e - read noise, interactive quantum efficiency of 54% at 500nm and can read a 6x6 ROI at 24,395fps. OPIC has 46+/-3e - read noise and a wide dynamic range of 65dB due to high full well capacity. Based on these characterization studies, Vanilla could be utilized in applications where demands include high spectral response and high speed region of interest readout while OPIC could be used for high speed, high dynamic range imaging.

Large-Format HgCdTe Dual-Band Long-Wavelength Infrared Focal-Plane Arrays

NASA Astrophysics Data System (ADS)

Smith, E. P. G.; Venzor, G. M.; Gallagher, A. M.; Reddy, M.; Peterson, J. M.; Lofgreen, D. D.; Randolph, J. E.

2011-08-01

Raytheon Vision Systems (RVS) continues to further its capability to deliver state-of-the-art high-performance, large-format, HgCdTe focal-plane arrays (FPAs) for dual-band long-wavelength infrared (L/LWIR) detection. Specific improvements have recently been implemented at RVS in molecular-beam epitaxy (MBE) growth and wafer fabrication and are reported in this paper. The aim of the improvements is to establish producible processes for 512 × 512 30- μm-unit-cell L/LWIR FPAs, which has resulted in: the growth of triple-layer heterojunction (TLHJ) HgCdTe back-to-back photodiode detector designs on 6 cm × 6 cm CdZnTe substrates with 300-K Fourier-transform infrared (FTIR) cutoff wavelength uniformity of ±0.1 μm across the entire wafer; demonstration of detector dark-current performance for the longer-wavelength detector band approaching that of single-color liquid-phase epitaxy (LPE) LWIR detectors; and uniform, high-operability, 512 × 512 30- μm-unit-cell FPA performance in both LWIR bands.

A hyperspectral image projector for hyperspectral imagers

NASA Astrophysics Data System (ADS)

Rice, Joseph P.; Brown, Steven W.; Neira, Jorge E.; Bousquet, Robert R.

2007-04-01

We have developed and demonstrated a Hyperspectral Image Projector (HIP) intended for system-level validation testing of hyperspectral imagers, including the instrument and any associated spectral unmixing algorithms. HIP, based on the same digital micromirror arrays used in commercial digital light processing (DLP*) displays, is capable of projecting any combination of many different arbitrarily programmable basis spectra into each image pixel at up to video frame rates. We use a scheme whereby one micromirror array is used to produce light having the spectra of endmembers (i.e. vegetation, water, minerals, etc.), and a second micromirror array, optically in series with the first, projects any combination of these arbitrarily-programmable spectra into the pixels of a 1024 x 768 element spatial image, thereby producing temporally-integrated images having spectrally mixed pixels. HIP goes beyond conventional DLP projectors in that each spatial pixel can have an arbitrary spectrum, not just arbitrary color. As such, the resulting spectral and spatial content of the projected image can simulate realistic scenes that a hyperspectral imager will measure during its use. Also, the spectral radiance of the projected scenes can be measured with a calibrated spectroradiometer, such that the spectral radiance projected into each pixel of the hyperspectral imager can be accurately known. Use of such projected scenes in a controlled laboratory setting would alleviate expensive field testing of instruments, allow better separation of environmental effects from instrument effects, and enable system-level performance testing and validation of hyperspectral imagers as used with analysis algorithms. For example, known mixtures of relevant endmember spectra could be projected into arbitrary spatial pixels in a hyperspectral imager, enabling tests of how well a full system, consisting of the instrument + calibration + analysis algorithm, performs in unmixing (i.e. de-convolving) the spectra in all pixels. We discuss here the performance of a visible prototype HIP. The technology is readily extendable to the ultraviolet and infrared spectral ranges, and the scenes can be static or dynamic.

Mechanical Design and Development of TES Bolometer Detector Arrays for the Advanced ACTPol Experiment

NASA Technical Reports Server (NTRS)

Ward, Jonathan T.; Austermann, Jason; Beall, James A.; Choi, Steve K.; Crowley, Kevin T.; Devlin, Mark J.; Duff, Shannon M.; Gallardo, Patricio M.; Henderson, Shawn W.; Ho, Shuay-Pwu Patty;

Mechanical designs and development of TES bolometer detector arrays for the Advanced ACTPol experiment

NASA Astrophysics Data System (ADS)

Ward, Jonathan T.; Austermann, Jason; Beall, James A.; Choi, Steve K.; Crowley, Kevin T.; Devlin, Mark J.; Duff, Shannon M.; Gallardo, Patricio A.; Henderson, Shawn W.; Ho, Shuay-Pwu Patty; Hilton, Gene; Hubmayr, Johannes; Khavari, Niloufar; Klein, Jeffrey; Koopman, Brian J.; Li, Dale; McMahon, Jeffrey; Mumby, Grace; Nati, Federico; Niemack, Michael D.; Page, Lyman A.; Salatino, Maria; Schillaci, Alessandro; Schmitt, Benjamin L.; Simon, Sara M.; Staggs, Suzanne T.; Thornton, Robert; Ullom, Joel N.; Vavagiakis, Eve M.; Wollack, Edward J.

2016-07-01

The next generation Advanced ACTPol (AdvACT) experiment is currently underway and will consist of four Transition Edge Sensor (TES) bolometer arrays, with three operating together, totaling 5800 detectors on the sky. Building on experience gained with the ACTPol detector arrays, AdvACT will utilize various new technologies, including 150 mm detector wafers equipped with multichroic pixels, allowing for a more densely packed focal plane. Each set of detectors includes a feedhorn array of stacked silicon wafers which form a spline profile leading to each pixel. This is then followed by a waveguide interface plate, detector wafer, back short cavity plate, and backshort cap. Each array is housed in a custom designed structure manufactured from high purity copper and then gold plated. In addition to the detector array assembly, the array package also encloses cryogenic readout electronics. We present the full mechanical design of the AdvACT high frequency (HF) detector array package along with a detailed look at the detector array stack assemblies. This experiment will also make use of extensive hardware and software previously developed for ACT, which will be modified to incorporate the new AdvACT instruments. Therefore, we discuss the integration of all AdvACT arrays with pre-existing ACTPol infrastructure.

Influence of infrared stimulation on spectroscopy characteristics of co-planar grid CdZnTe detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fjodorov, V.; Ivanov, V.; Loutchanski, A.

It was previously found that illumination with monochromatic infrared (IR) light with wavelengths close to the absorption edge of the CdZnTe exert significant positive influence on the spectrometric characteristics of quasi-hemispherical CdZnTe detectors at room temperature. In this paper, preliminary results of IR stimulation on the spectrometric characteristics of coplanar-grid CdZnTe detectors as well as results of further studies of planar and quasi-hemispherical detectors are presented. Coplanar-grid detectors of 10 mm x 10 mm x 10 mm from Redlen Technologies and commercial available IR LEDs with different wavelengths of 800-1000 nm were used in the experiments. Influence of intensity andmore » direction of IR illumination on the detector's characteristics was studied. Analysis of signals shapes from the preamplifiers outputs at registration of alpha particles showed that IR illumination leads to a change in the shapes of these signals. This may indicate changes in electric fields distributions. An improvement in energy resolution at gamma-energy of 662 keV was observed with quasi-hemispherical and co-planar detectors at the certain levels of IR illumination intensity. The most noticeable effect of IR stimulation was observed with quasi-hemispherical detectors. It is due with optimization of charge collection conditions in the quasi-hemispherical detectors under IT stimulation. (authors)« less

Multi-anode microchannel arrays. [for use in ground-based and spaceborne telescopes

NASA Technical Reports Server (NTRS)

Timothy, J. G.; Mount, G. H.; Bybee, R. L.

1979-01-01

The Multi-Anode Microchannel Arrays (MAMA's) are a family of photoelectric, photon-counting array detectors being developed for use in instruments on both ground-based and space-borne telescopes. These detectors combine high sensitivity and photometric stability with a high-resolution imaging capability. MAMA detectors can be operated in a windowless configuration at extreme-ultraviolet and soft X-ray wavelengths or in a sealed configuration at ultraviolet and visible wavelengths. Prototype MAMA detectors with up to 512 x 512 pixels are now being tested in the laboratory and telescope operation of a simple (10 x 10)-pixel visible-light detector has been initiated. The construction and modes-of-operation of the MAMA detectors are briefly described and performance data are presented.

CMOS foveal image sensor chip

NASA Technical Reports Server (NTRS)

Scott, Peter (Inventor); Sridhar, Ramalingam (Inventor); Bandera, Cesar (Inventor); Xia, Shu (Inventor)

2002-01-01

A foveal image sensor integrated circuit comprising a plurality of CMOS active pixel sensors arranged both within and about a central fovea region of the chip. The pixels in the central fovea region have a smaller size than the pixels arranged in peripheral rings about the central region. A new photocharge normalization scheme and associated circuitry normalizes the output signals from the different size pixels in the array. The pixels are assembled into a multi-resolution rectilinear foveal image sensor chip using a novel access scheme to reduce the number of analog RAM cells needed. Localized spatial resolution declines monotonically with offset from the imager's optical axis, analogous to biological foveal vision.

Development of pixellated Ir-TESs

NASA Astrophysics Data System (ADS)

Zen, Nobuyuki; Takahashi, Hiroyuki; Kunieda, Yuichi; Damayanthi, Rathnayaka M. T.; Mori, Fumiakira; Fujita, Kaoru; Nakazawa, Masaharu; Fukuda, Daiji; Ohkubo, Masataka

2006-04-01

We have been developing Ir-based pixellated superconducting transition edge sensors (TESs). In the area of material or astronomical applications, the sensor with few eV energy resolution and over 1000 pixels imaging property is desired. In order to achieve this goal, we have been analyzing signals from pixellated TESs. In the case of a 20 pixel array of Ir-TESs, with 45 μm×45 μm pixel sizes, the incident X-ray signals have been classified into 16 groups. We have applied numerical signal analysis. On the one hand, the energy resolution of our pixellated TES is strongly degraded. However, using pulse shape analysis, we can dramatically improve the resolution. Thus, we consider that the pulse signal analysis will lead this device to be used as a practical photon incident position identifying TES.

Reduced signal crosstalk multi neurotransmitter image sensor by microhole array structure

NASA Astrophysics Data System (ADS)

Ogaeri, Yuta; Lee, You-Na; Mitsudome, Masato; Iwata, Tatsuya; Takahashi, Kazuhiro; Sawada, Kazuaki

2018-06-01

A microhole array structure combined with an enzyme immobilization method using magnetic beads can enhance the target discernment capability of a multi neurotransmitter image sensor. Here we report the fabrication and evaluation of the H+-diffusion-preventing capability of the sensor with the array structure. The structure with an SU-8 photoresist has holes with a size of 24.5 × 31.6 µm2. Sensors were prepared with the array structure of three different heights: 0, 15, and 60 µm. When the sensor has the structure of 60 µm height, 48% reduced output voltage is measured at a H+-sensitive null pixel that is located 75 µm from the acetylcholinesterase (AChE)-immobilized pixel, which is the starting point of H+ diffusion. The suppressed H+ immigration is shown in a two-dimensional (2D) image in real time. The sensor parameters, such as height of the array structure and measuring time, are optimized experimentally. The sensor is expected to effectively distinguish various neurotransmitters in biological samples.

High-Energy 3D Calorimeter for Use in Gamma-Ray Astronomy Based on Position-Sensitive Virtual Frisch-Grid CdZnTe Detectors

NASA Technical Reports Server (NTRS)

Moiseev, A.; Bolotnikov, A.; DeGeronimo, G.; Hays, E.; James, R.; Thompson, D.; Vernon, E.

2017-01-01

We will present a concept for a calorimeter based on a novel approach of 3D position-sensitive virtual Frisch-grid CdZnTe (hereafter CZT) detectors. This calorimeter aims to measure photons with energies from approximately 100 keV to 20 - 50 MeV . The expected energy resolution at 662 keV is better than 1% FWHM, and the photon interaction position-measurement accuracy is better than 1 mm in all 3 dimensions. Each CZT bar is a rectangular prism with typical cross-section from 5 x 5 to 7 x 7 mm2 and length of 2 - 4 cm. The bars are arranged in modules of 4 x 4 bars, and the modules themselves can be assembled into a larger array. The 3D virtual voxel approach solves a long-standing problem with CZT detectors associated with material imperfections that limit the performance and usefulness of relatively thick detectors (i.e., greater than 1 cm). Also, it allows us to use the standard (unselected) grade crystals, while achieving the energy resolution of the premium detectors and thus substantially reducing the cost of the instrument. Such a calorimeter can be successfully used in space telescopes that use Compton scattering of gamma rays, such as AMEGO, serving as part of its calorimeter and providing the position and energy measurement for Compton-scattered photons (like a focal plane detector in a Compton camera). Also, it could provide suitable energy resolution to allow for spectroscopic measurements of gamma ray lines from nuclear decays.

High-energy 3D calorimeter for use in gamma-ray astronomy based on position-sensitive virtual Frisch-grid CdZnTe detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moiseev, Alexander; Bolotnikov, A.; DeGeronimo, G.

Here, we will present a concept for a calorimeter based on a novel approach of 3D position-sensitive virtual Frisch-grid CdZnTe (hereafter CZT) detectors. This calorimeter aims to measure photons with energies from ~100 keV to 20–50 MeV . The expected energy resolution at 662 keV is better than 1% FWHM, and the photon interaction position-measurement accuracy is better than 1 mm in all 3 dimensions. Each CZT bar is a rectangular prism with typical cross-section from 5×5 to 7×7 mm 2 and length of 2–4 cm. The bars are arranged in modules of 4×4 bars, and the modules themselves canmore » be assembled into a larger array. The 3D virtual voxel approach solves a long-standing problem with CZT detectors associated with material imperfections that limit the performance and usefulness of relatively thick detectors (i.e., >1 cm). Also, it allows us to use the standard (unselected) grade crystals, while achieving the energy resolution of the premium detectors and thus substantially reducing the cost of the instrument. Such a calorimeter can be successfully used in space telescopes that use Compton scattering of γ-rays, such as AMEGO, serving as part of its calorimeter and providing the position and energy measurement for Compton-scattered photons (like a focal plane detector in a Compton camera). Also, it could provide suitable energy resolution to allow for spectroscopic measurements of γ-ray lines from nuclear decays.« less

High-energy 3D calorimeter for use in gamma-ray astronomy based on position-sensitive virtual Frisch-grid CdZnTe detectors

DOE PAGES

Moiseev, Alexander; Bolotnikov, A.; DeGeronimo, G.; ...

2017-12-19

Here, we will present a concept for a calorimeter based on a novel approach of 3D position-sensitive virtual Frisch-grid CdZnTe (hereafter CZT) detectors. This calorimeter aims to measure photons with energies from ~100 keV to 20–50 MeV . The expected energy resolution at 662 keV is better than 1% FWHM, and the photon interaction position-measurement accuracy is better than 1 mm in all 3 dimensions. Each CZT bar is a rectangular prism with typical cross-section from 5×5 to 7×7 mm 2 and length of 2–4 cm. The bars are arranged in modules of 4×4 bars, and the modules themselves canmore » be assembled into a larger array. The 3D virtual voxel approach solves a long-standing problem with CZT detectors associated with material imperfections that limit the performance and usefulness of relatively thick detectors (i.e., >1 cm). Also, it allows us to use the standard (unselected) grade crystals, while achieving the energy resolution of the premium detectors and thus substantially reducing the cost of the instrument. Such a calorimeter can be successfully used in space telescopes that use Compton scattering of γ-rays, such as AMEGO, serving as part of its calorimeter and providing the position and energy measurement for Compton-scattered photons (like a focal plane detector in a Compton camera). Also, it could provide suitable energy resolution to allow for spectroscopic measurements of γ-ray lines from nuclear decays.« less

Backside illuminated CMOS-TDI line scan sensor for space applications

NASA Astrophysics Data System (ADS)

Cohen, Omer; Ofer, Oren; Abramovich, Gil; Ben-Ari, Nimrod; Gershon, Gal; Brumer, Maya; Shay, Adi; Shamay, Yaron

2018-05-01

A multi-spectral backside illuminated Time Delayed Integration Radiation Hardened line scan sensor utilizing CMOS technology was designed for continuous scanning Low Earth Orbit small satellite applications. The sensor comprises a single silicon chip with 4 independent arrays of pixels where each array is arranged in 2600 columns with 64 TDI levels. A multispectral optical filter whose spectral responses per array are adjustable per system requirement is assembled at the package level. A custom 4T Pixel design provides the required readout speed, low-noise, very low dark current, and high conversion gains. A 2-phase internally controlled exposure mechanism improves the sensor's dynamic MTF. The sensor high level of integration includes on-chip 12 bit per pixel analog to digital converters, on-chip controller, and CMOS compatible voltage levels. Thus, the power consumption and the weight of the supporting electronics are reduced, and a simple electrical interface is provided. An adjustable gain provides a Full Well Capacity ranging from 150,000 electrons up to 500,000 electrons per column and an overall readout noise per column of less than 120 electrons. The imager supports line rates ranging from 50 to 10,000 lines/sec, with power consumption of less than 0.5W per array. Thus, the sensor is characterized by a high pixel rate, a high dynamic range and a very low power. To meet a Latch-up free requirement RadHard architecture and design rules were utilized. In this paper recent electrical and electro-optical measurements of the sensor's Flight Models will be presented for the first time.

Contact CMOS imaging of gaseous oxygen sensor array

PubMed Central

Daivasagaya, Daisy S.; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C.; Chodavarapu, Vamsy P.; Bright, Frank V.

2014-01-01

We describe a compact luminescent gaseous oxygen (O2) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O2-sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp)3]2+) encapsulated within sol–gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors. PMID:24493909

Contact CMOS imaging of gaseous oxygen sensor array.

PubMed

Daivasagaya, Daisy S; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C; Chodavarapu, Vamsy P; Bright, Frank V

2011-10-01

We describe a compact luminescent gaseous oxygen (O 2 ) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O 2 -sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp) 3 ] 2+ ) encapsulated within sol-gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors.

Comparison of experimental results of a Quad-CZT array detector, a NaI(Tl), a LaBr3(Ce), and a HPGe for safeguards applications

NASA Astrophysics Data System (ADS)

Kwak, S.-W.; Choi, J.; Park, S. S.; Ahn, S. H.; Park, J. S.; Chung, H.

2017-11-01

A compound semiconductor detector, CdTe (or CdZnTe), has been used in various areas including nuclear safeguards applications. To address its critical drawback, low detection efficiency, which leads to a long measurement time, a Quad-CZT array-based gamma-ray spectrometer in our previous study has been developed by combining four individual CZT detectors. We have re-designed the developed Quad-CZT array system to make it more simple and compact for a hand-held gamma-ray detector. The objective of this paper aims to compare the improved Quad-CZT array system with the traditional gamma-ray spectrometers (NaI(Tl), LaBr3(Ce), HPGe); these detectors currently have been the most commonly used for verification of nuclear materials. Nuclear materials in different physical forms in a nuclear facility of Korea were measured by the Quad-CZT array system and the existing gamma-ray detectors. For measurements of UO2 pellets and powders, and fresh fuel rods, the Quad-CZT array system turned out to be superior to the NaI(Tl) and LaBr3(Ce). For measurements of UF6 cylinders with a thick wall, the Quad-CZT array system and HPGe gave similar accuracy under the same measurement time. From the results of the field tests conducted, we can conclude that the improved Quad-CZT array system would be used as an alternative to HPGes and scintillation detectors for the purpose of increasing effectivenss and efficiency of safeguards applications. This is the first paper employing a multi-element CZT array detector for measurement of nuclear materials—particularly uranium in a UF6 cylinder—in a real nuclear facility. The present work also suggests that the multi-CZT array system described in this study would be one promising method to address a serious weakness of CZT-based radiation detection.

Argus: A W-band 16-pixel focal plane array for the Green Bank Telescope

NASA Astrophysics Data System (ADS)

Devaraj, Kiruthika; Church, Sarah; Cleary, Kieran; Frayer, David; Gawande, Rohit; Goldsmith, Paul; Gundersen, Joshua; Harris, Andrew; Kangaslahti, Pekka; Readhead, Tony; Reeves, Rodrigo; Samoska, Lorene; Sieth, Matt; Voll, Patricia

2015-05-01

We are building Argus, a 16-pixel square-packed focal plane array that will cover the 75-115.3 GHz frequency range on the Robert C. Byrd Green Bank Telescope (GBT). The primary research area for Argus is the study of star formation within our Galaxy and nearby galaxies. Argus will map key molecules that trace star formation, including carbon monoxide (CO) and hydrogen cyanide (HCN). An additional key science area is astrochemistry, which will be addressed by observing complex molecules in the interstellar medium, and the study of formation of solar systems, which will be addressed by identifying dense pre-stellar cores and by observing comets in our solar system. Argus has a highly scalable architecture and will be a technology path finder for larger arrays. The array is modular in construction, which will allow easy replacement of malfunctioning and poorly performing components.

Uncooled infrared focal plane array imaging in China

NASA Astrophysics Data System (ADS)

Lei, Shuyu

2015-06-01

This article reviews the development of uncooled infrared focal plane array (UIFPA) imaging in China in the past decade. Sensors based on optical or electrical read-out mechanism were developed but the latter dominates the market. In resistive bolometers, VOx and amorphous silicon are still the two major thermal-sensing materials. The specifications of the IRFPA made by different manufactures were collected and compared. Currently more than five Chinese companies and institutions design and fabricate uncooled infrared focal plane array. Some devices have sensitivity as high as 30 mK; the largest array for commercial products is 640×512 and the smallest pixel size is 17 μm. Emphasis is given on the pixel MEMS design, ROIC design, fabrication, and packaging of the IRFPA manufactured by GWIC, especially on design for high sensitivities, low noise, better uniformity and linearity, better stabilization for whole working temperature range, full-digital design, etc.

Instrumentation effects on U and Pu CBNM standards spectra quality measured on a 500 mm3 CdZnTe and a 2×2 inch LaBr3 detectors

NASA Astrophysics Data System (ADS)

Meleshenkovskii, I.; Borella, A.; Van der Meer, K.; Bruggeman, M.; Pauly, N.; Labeau, P. E.; Schillebeeckx, P.

2018-01-01

Nowadays, there is interest in developing gamma-ray measuring devices based on the room temperature operated medium resolution detectors such as semiconductor detectors of the CdZnTe type and scintillators of the LaBr3 type. This is true also for safeguards applications and the International Atomic Energy Agency (IAEA) has launched a project devoted to the assessment of medium resolution gamma-ray spectroscopy for the verification of the isotopic composition of U and Pu bearing samples. This project is carried out within the Non-Destructive Assay Working Group of the European Safeguards Research and Development Association (ESARDA). In this study we analyze medium resolution spectra of U and Pu standards with the aim to develop an isotopic composition determination algorithm, particularly suited for these types of detectors. We show how the peak shape of a CdZnTe detector is influenced by the instrumentation parameters. The experimental setup consisted of a 500 mm3 CdZnTe detector, a 2×2 inch LaBr3 detector, two types of measurement instrumentation - an analogue one and a digital one, and a set of certified samples - a 207Bi point source and U and Pu CBNM standards. The results of our measurements indicate that the lowest contribution to the peak asymmetry and thus the smallest impact on the resolution of the 500 mm3 CdZnTe detector was achieved with the digital MCA. Analysis of acquired spectra allowed to reject poor quality measurement runs and produce summed spectra files with the least impact of instrumentation instabilities. This work is preliminary to further studies concerning the development of an isotopic composition determination algorithm particularly suited for CZT and LaBr3 detectors for safeguards applications.

320 x 240 uncooled IRFPA with pixel wise thin film vacuum packaging

NASA Astrophysics Data System (ADS)

Yon, J.-J.; Dumont, G.; Rabaud, W.; Becker, S.; Carle, L.; Goudon, V.; Vialle, C.; Hamelin, A.; Arnaud, A.

2012-10-01

Silicon based vacuum packaging is a key enabling technology for achieving affordable uncooled Infrared Focal Plane Arrays (IRFPA) as required by the promising mass market for very low cost IR applications, such as automotive driving assistance, energy loss monitoring in buildings, motion sensors… Among the various approaches studied worldwide, the CEA, LETI is developing a unique technology where each bolometer pixel is sealed under vacuum at the wafer level, using an IR transparent thin film deposition. This technology referred to as PLP (Pixel Level Packaging), leads to an array of hermetic micro-caps each containing a single microbolometer. Since the successful demonstration that the PLP technology, when applied on a single microbolometer pixel, can provide the required vacuum < 10-3 mbar, the authors have pushed forward the development of the technology on fully operational QVGA readout circuits CMOS base wafers (320 x 240 pixels). In this outlook, the article reports on the electro optical performance obtained from this preliminary PLP based QVGA demonstrator. Apart from the response, noise and NETD distributions, the paper also puts emphasis on additional key features such as thermal time constant, image quality, and ageing properties.

Simultaneous measurement of X-ray specular reflection and off-specular diffuse scattering from liquid surfaces using a two-dimensional pixel array detector: the liquid-interface reflectometer of BL37XU at SPring-8.

PubMed

Yano, Yohko F; Uruga, Tomoya; Tanida, Hajime; Toyokawa, Hidenori; Terada, Yasuko; Yamada, Hironari

2010-07-01

An X-ray reflectometer for simultaneous measurement of specular and off-specular reflection of liquid surfaces is described. The reflectometer, equipped with a two-dimensional single X-ray photon-counting pixel array detector obtained the full range of X-ray specular and off-specular reflections in an extremely short time (1 s). Both the specular and off-specular reflection of water exhibited good agreement with the predicted capillary-wave theory within the appropriate instrumental resolution. The approach is also demonstrated on an aqueous solution of 1-dodecyl-3-methylimidazolium chloride. The monolayer in which the dodecyl chain faces upwards and the Cl(-) anion locates next to the imidazolium ring formed on the water surface was found to be laterally homogeneous. The use of a pixel array detector will be particularly powerful for in situ measurements to investigate both out-of-plane and in-plane structures simultaneously, not only for liquid surfaces but also for other thin films.

X-ray performance of 0.18 µm CMOS APS test arrays for solar observation

NASA Astrophysics Data System (ADS)

Dryer, B. J.; Holland, A. D.; Jerram, P.; Sakao, Taro

2012-07-01

Solar-C is the third generation solar observatory led by JAXA. The accepted ‘Plan-B’ payload calls for a radiation-hard solar-staring photon-counting x-ray spectrometer. CMOS APS technology offers advantages over CCDs for such an application such as increased radiation hardness and high frame rate (instrument target of 1000 fps). Looking towards the solution of a bespoke CMOS APS, this paper reports the x-ray spectroscopy performance, concentrating on charge collection efficiency and split event analysis, of two baseline e2v CMOS APSs not designed for x-ray performance, the EV76C454 and the Ocean Colour Imager (OCI) test array. The EV76C454 is an industrial 5T APS designed for machine vision, available back and front illuminated. The OCI test arrays have varying pixel design across the chips, but are 4T, back illuminated and have thin low-resistivity and thick high-resistivity variants. The OCI test arrays’ pixel variants allow understanding of how pixel design can affect x-ray performance.

Active-Pixel Image Sensor With Analog-To-Digital Converters

NASA Technical Reports Server (NTRS)

Fossum, Eric R.; Mendis, Sunetra K.; Pain, Bedabrata; Nixon, Robert H.

1995-01-01

Proposed single-chip integrated-circuit image sensor contains 128 x 128 array of active pixel sensors at 50-micrometer pitch. Output terminals of all pixels in each given column connected to analog-to-digital (A/D) converter located at bottom of column. Pixels scanned in semiparallel fashion, one row at time; during time allocated to scanning row, outputs of all active pixel sensors in row fed to respective A/D converters. Design of chip based on complementary metal oxide semiconductor (CMOS) technology, and individual circuit elements fabricated according to 2-micrometer CMOS design rules. Active pixel sensors designed to operate at video rate of 30 frames/second, even at low light levels. A/D scheme based on first-order Sigma-Delta modulation.

The Latest Results from the Focal L-Band Array for the Green Bank Telescope (FLAG), the World's (Current) Most Sensitive Phased Array Feed

NASA Astrophysics Data System (ADS)

Pingel, Nickolas; Pisano, D. J.

2018-01-01

Phased Array Feeds (PAFs) represent the next revolution in radio astronomy instrumentation. I will present results from the latest commissioning run from the Focal L-Band Array for the Green Bank telescope (FLAG), which holds the current world record for PAF sensitivity. Since we are able to operate at system temperatures comparable with the traditional GBT single pixel L-Band feed, the increase in the field-of-view provided by the beamforming capabilities of PAFs results in a dramatic (a factor of 5) increase in survey speeds. In particular, FLAG can probe similar neutral hydrogen column density regimes over a 4 sq. deg region in 24.6 minutes as opposed to 4.1 hours in an equivalent single pixel map (excluding observing overhead). In addition to comparisons between data taken with FLAG and the single-pixel L-Band feed, I will also discuss the technical aspects of the observing procedure, data reduction, and the transition path for FLAG from an instrument that is principle-investigator run to one that is general use. These FLAG results provide a very encouraging outlook on how the GBT will continue to compete with current and planned radio telescope facilities.

The First Multichroic Polarimeter Array on the Atacama Cosmology Telescope: Characterization and Performance

NASA Technical Reports Server (NTRS)

Ho, S. P.; Pappas, C. G.; Austermann, J.; Beall, J. A.; Becker, D.; Choi, S. K.; Datta, R.; Duff, S. M.; Gallardo, P. A.; Grace, E.;

The First Multichroic Polarimeter Array on the Atacama Cosmology Telescope: Characterization and Performance

NASA Astrophysics Data System (ADS)

Ho, S. P.; Pappas, C. G.; Austermann, J.; Beall, J. A.; Becker, D.; Choi, S. K.; Datta, R.; Duff, S. M.; Gallardo, P. A.; Grace, E.; Hasselfield, M.; Henderson, S. W.; Hilton, G. C.; Hubmayr, J.; Koopman, B. J.; Lanen, J. V.; Li, D.; McMahon, J.; Nati, F.; Niemack, M. D.; Niraula, P.; Salatino, M.; Schillaci, A.; Schmitt, B. L.; Simon, S. M.; Staggs, S. T.; Stevens, J. R.; Ward, J. T.; Wollack, E. J.; Vavagiakis, E. M.

2016-08-01

The Atacama Cosmology Telescope Polarimeter (ACTPol) is a polarization sensitive receiver for the 6-m Atacama Cosmology Telescope (ACT) and measures the small angular scale polarization anisotropies in the cosmic microwave background (CMB). The full focal plane is composed of three detector arrays, containing over 3000 transition edge sensors (TES detectors) in total. The first two detector arrays, observing at 146 GHz, were deployed in 2013 and 2014, respectively. The third and final array is composed of multichroic pixels sensitive to both 90 and 146 GHz and saw first light in February 2015. Fabricated at NIST, this dichroic array consists of 255 pixels, with a total of 1020 polarization sensitive bolometers and is coupled to the telescope with a monolithic array of broad-band silicon feedhorns. The detectors are read out using time-division SQUID multiplexing and cooled by a dilution refrigerator at 110 mK. We present an overview of the assembly and characterization of this multichroic array in the lab, and the initial detector performance in Chile. The detector array has a TES detector electrical yield of 85 %, a total array sensitivity of less than 10 \\upmu K√{ {s}}, and detector time constants and saturation powers suitable for ACT CMB observations.

A kilo-pixel imaging system for future space based far-infrared observatories using microwave kinetic inductance detectors

NASA Astrophysics Data System (ADS)

Baselmans, J. J. A.; Bueno, J.; Yates, S. J. C.; Yurduseven, O.; Llombart, N.; Karatsu, K.; Baryshev, A. M.; Ferrari, L.; Endo, A.; Thoen, D. J.; de Visser, P. J.; Janssen, R. M. J.; Murugesan, V.; Driessen, E. F. C.; Coiffard, G.; Martin-Pintado, J.; Hargrave, P.; Griffin, M.

2017-05-01

Aims: Future astrophysics and cosmic microwave background space missions operating in the far-infrared to millimetre part of the spectrum will require very large arrays of ultra-sensitive detectors in combination with high multiplexing factors and efficient low-noise and low-power readout systems. We have developed a demonstrator system suitable for such applications. Methods: The system combines a 961 pixel imaging array based upon Microwave Kinetic Inductance Detectors (MKIDs) with a readout system capable of reading out all pixels simultaneously with only one readout cable pair and a single cryogenic amplifier. We evaluate, in a representative environment, the system performance in terms of sensitivity, dynamic range, optical efficiency, cosmic ray rejection, pixel-pixel crosstalk and overall yield at an observation centre frequency of 850 GHz and 20% fractional bandwidth. Results: The overall system has an excellent sensitivity, with an average detector sensitivity < NEPdet> =3×10-19 WHz measured using a thermal calibration source. At a loading power per pixel of 50 fW we demonstrate white, photon noise limited detector noise down to 300 mHz. The dynamic range would allow the detection of 1 Jy bright sources within the field of view without tuning the readout of the detectors. The expected dead time due to cosmic ray interactions, when operated in an L2 or a similar far-Earth orbit, is found to be <4%. Additionally, the achieved pixel yield is 83% and the crosstalk between the pixels is <-30 dB. Conclusions: This demonstrates that MKID technology can provide multiplexing ratios on the order of a 1000 with state-of-the-art single pixel performance, and that the technology is now mature enough to be considered for future space based observatories and experiments.

Position and time resolution measurements with a microchannel plate image intensifier: A comparison of monolithic and pixelated CeBr3 scintillators

NASA Astrophysics Data System (ADS)

Ackermann, Ulrich; Eschbaumer, Stephan; Bergmaier, Andreas; Egger, Werner; Sperr, Peter; Greubel, Christoph; Löwe, Benjamin; Schotanus, Paul; Dollinger, Günther

2016-07-01

To perform Four Dimensional Age Momentum Correlation measurements in the near future, where one obtains the positron lifetime in coincidence with the three dimensional momentum of the electron annihilating with the positron, we have investigated the time and position resolution of two CeBr3 scintillators (monolithic and an array of pixels) using a Photek IPD340/Q/BI/RS microchannel plate image intensifier. The microchannel plate image intensifier has an active diameter of 40 mm and a stack of two microchannel plates in chevron configuration. The monolithic CeBr3 scintillator was cylindrically shaped with a diameter of 40 mm and a height of 5 mm. The pixelated scintillator array covered the whole active area of the microchannel plate image intensifier and the shape of each pixel was 2.5·2.5·8 mm3 with a pixel pitch of 3.3 mm. For the monolithic setup the measured mean single time resolution was 330 ps (FWHM) at a gamma energy of 511 keV. No significant dependence on the position was detected. The position resolution at the center of the monolithic scintillator was about 2.5 mm (FWHM) at a gamma energy of 662 keV. The single time resolution of the pixelated crystal setup reached 320 ps (FWHM) in the region of the center of the active area of the microchannel plate image intensifier. The position resolution was limited by the cross-section of the pixels. The gamma energy for the pixel setup measurements was 511 keV.

Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zappettini, A.; Zambelli, N.; Benassi, G.

2014-06-23

The presence of Te inclusions is one of the main factors limiting performances of CdZnTe crystals as X-ray detectors. We show that by means of infrared laser radiation it is possible to move and anneal tellurium inclusions exploiting a thermo-diffusion mechanism. The process is studied live during irradiation by means of an optical microscope equipment. Experimental conditions, and, in particular, energy laser fluence, for annealing inclusions of different dimensions are determined.

Advances in Small Pixel TES-Based X-Ray Microcalorimeter Arrays for Solar Physics and Astrophysics

NASA Technical Reports Server (NTRS)

Bandler, S. R.; Adams, J. S.; Bailey, C. N.; Busch, S. E.; Chervenak, J. A.; Eckart, M. E.; Ewin, A. E.; Finkbeiner, F. M.; Kelley, R. L.; Kelly, D. P.;

Pilot Studies With BGO Scintillators Coupled to Low-Noise, Large-Area, SiPM Arrays

NASA Astrophysics Data System (ADS)

González, Antonio J.; Sánchez, Filomeno; Majewski, Stan; Parkhurst, Philip; Vaigneur, Keith; Benlloch, José M.

2016-10-01

Despite the fact that timing capabilities for devices based on BGO are limited when compared with LYSO or LSO based systems, the cost of BGO is considerably lower and could thus, be an option for devices with high scintillator volumes (as in the case of nuclear medicine scanners), but also in smaller dedicated imagers. Recently, many studies have been carried out in order to determine the potential capabilities of BGO for PET and SPECT applications, where BGO scintillator crystals have been coupled to SiPM photosensor devices. However, so far these studies have only been done on small-size BGO samples. In this work, we have studied three different BGO size configurations, coupled to a 12 × 12 low-noise SiPM array. Each SiPM has an active area of 3 × 3 mm2 with a pixel pitch of 4.2 mm. A special charge division network providing information for each row and column output of the SiPM array has been used. The first tested BGO configuration has 2.5 mm crystal pixel pitch and 10 mm thickness, while the second makes use of smaller 1.5 mm pixels with 1.67 mm pitch but only 3 mm thick. The third evaluated configuration provided limited photon depth of interaction (DOI) information by using two staggered layers of BGO pixels also with 2.5 mm pitch and with a total thickness of 20 mm. Performances of these configurations in terms of spatial and energy resolutions have been determined. Energy resolution as good as 14.2% was obtained. Our results indicate that single layer crystal arrays with pixel values as low as 1.5 mm or two staggered layers with 2.5 mm pitch are well suited for PET applications, such as low-cost and high performance dedicated PET systems or large systems.

High-density arrays of x-ray microcalorimeters for Constellation-X

NASA Astrophysics Data System (ADS)

Kilbourne, Caroline A.; Bandler, Simon R.; Brown, Ari D.; Chervenak, James A.; Figueroa-Feliciano, Enectali; Finkbeiner, Fred M.; Iyomoto, Naoko; Kelley, Richard L.; Porter, F. Scott; Saab, Tarek; Sadleir, John; White, Jennifer

2006-06-01

We have been developing x-ray microcalorimeters for the Constellation-X mission. Devices based on superconducting transition-edge sensors (TES) have demonstrated the potential to meet the Constellation-X requirements for spectral resolution, speed, and array scale (> 1000 pixels) in a close-packed geometry. In our part of the GSFC/NIST collaboration on this technology development, we have been concentrating on the fabrication of arrays of pixels suitable for the Constellation-X reference configuration. We have fabricated 8x8 arrays with 0.25-mm pixels arranged with 92% fill factor. The pixels are based on Mo/Au TES and Bi/Cu or Au/Bi absorbers. We have achieved a resolution of 4.0 eV FWHM at 6 keV in such devices, which meets the Constellation-X resolution requirement at 6 keV. Studies of the thermal transport in our Bi/Cu absorbers have shown that, while there is room for improvement, for 0.25-mm pixels the standard absorber design is adequate to avoid unacceptable line-broadening from position dependence caused by thermal diffusion. In order to improve reproducibility and to push closer to the 2-eV goal at 6 keV, however, we are refining the design of the TES and the interface to the absorber. Recent efforts to introduce a barrier layer between the Bi and the Mo/Au to avoid variable interface chemistry and thus improve the reproducibility of device characteristics have thus far yielded unsatisfactory results. However, we have developed a new set of absorber designs with contacts to the TES engineered to allow contact only in regions that do not serve as the active thermometer. We have further constrained the design so that a low-resistance absorber will not electrically short the TES. It is with such a design that we have achieved 4.0 eV resolution at 6 keV.

Geiger-mode avalanche photodiode focal plane arrays for three-dimensional imaging LADAR

NASA Astrophysics Data System (ADS)

Itzler, Mark A.; Entwistle, Mark; Owens, Mark; Patel, Ketan; Jiang, Xudong; Slomkowski, Krystyna; Rangwala, Sabbir; Zalud, Peter F.; Senko, Tom; Tower, John; Ferraro, Joseph

2010-09-01

We report on the development of focal plane arrays (FPAs) employing two-dimensional arrays of InGaAsP-based Geiger-mode avalanche photodiodes (GmAPDs). These FPAs incorporate InP/InGaAs(P) Geiger-mode avalanche photodiodes (GmAPDs) to create pixels that detect single photons at shortwave infrared wavelengths with high efficiency and low dark count rates. GmAPD arrays are hybridized to CMOS read-out integrated circuits (ROICs) that enable independent laser radar (LADAR) time-of-flight measurements for each pixel, providing three-dimensional image data at frame rates approaching 200 kHz. Microlens arrays are used to maintain high fill factor of greater than 70%. We present full-array performance maps for two different types of sensors optimized for operation at 1.06 μm and 1.55 μm, respectively. For the 1.06 μm FPAs, overall photon detection efficiency of >40% is achieved at <20 kHz dark count rates with modest cooling to ~250 K using integrated thermoelectric coolers. We also describe the first evalution of these FPAs when multi-photon pulses are incident on single pixels. The effective detection efficiency for multi-photon pulses shows excellent agreement with predictions based on Poisson statistics. We also characterize the crosstalk as a function of pulse mean photon number. Relative to the intrinsic crosstalk contribution from hot carrier luminescence that occurs during avalanche current flows resulting from single incident photons, we find a modest rise in crosstalk for multi-photon incident pulses that can be accurately explained by direct optical scattering.

Extended focal-plane array development for the International X-ray Observatory

NASA Astrophysics Data System (ADS)

Smith, Stephen J.; Bandler, Simon R.; Beyer, Joern; Chervenak, James A.; Drung, Dietmar; Eckart, Megan E.; Finkbeiner, Fred M.; Kelley, Richard L.; Kilbourne, Caroline A.; Scott Porter, F.; Sadleir, John E.

2009-12-01

We are developing arrays of transition-edge sensors (TES's) for the International X-ray observatory (IXO). The IXO microcalorimeter array will consist of a central 40×40 core of 300 μm pitch pixels with a resolution of 2.5 eV from 0.3-10 keV. To maximize the science return from the mission, an outer extended array is also required. This 52×52 array (2304 elements surrounding the core) of 600 μm pitch pixels increases the field-of-view from 2' to 5.4' with a resolution of 10 eV. However, significantly increasing the number of readout channels is unfavorable due to the increase in mass and power of the readout chain as well as adding complexity at the focal plane. Consequently, we are developing position-sensitive devices which maintain the same plate scale but at a reduced number of readout channels. One option is to use multiple absorber elements with different thermal conductances to a single TES. Position discrimination is achieved from differences in the pulse rise-time. Another new option is to inductively couple several TES's to a single SQUID. Position discrimination can be achieved by using different combinations of coupling polarity, inductive couplings and heat sink conductances. We present first results demonstrating <9 eV across four 500 μm pixels coupled to a single SQUID. A further possibility is to increase the number of channels to be time-division multiplexed in a single column at some expense in resolution. In this paper we discuss experimental results and trade-offs for these extended array options.

Reducing the Read Noise of HAWAII-2RG Detector Systems with Improved Reference Sampling and Subtraction (IRS2)

NASA Technical Reports Server (NTRS)

Rauscher, Bernard J.; Arendt, Richard G.; Fixsen, D. J.; Lander, Matthew; Lindler, Don; Loose, Markus; Moseley, S. H.; Wilson, Donna V.; Xenophontos, Christos

2012-01-01

IRS2 is a Wiener-optimal approach to using all of the reference information that Teledyne's HAWAII-2RG detector arrays provide. Using a new readout pattern, IRS2 regularly interleaves reference pixels with the normal pixels during readout. This differs from conventional clocking, in which the reference pixels are read out infrequently, and only in a few rows and columns around the outside edges of the detector array. During calibration, the data are processed in Fourier space, which is <;:lose to the noise's eigenspace. Using IRS2, we have reduced the read noise of the James Webb Space Telescope Near Infrared Spectrograph by 15% compared to conventional readout. We are attempting to achieve further gains by calibrating out recently recognized non-stationary noise that appears at the frame rate.

Characterization of multiport solid state imagers at megahertz data rates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yates, G.J.; Pena, C.R.; Turko, B.T.

1994-08-01

Test results obtained from two recently developed multiport Charge-Coupled Devices (CCDs) operated at pixel rates in the 10-to-100 MHz range will be presented . The CCDs were evaluated in Los Alamos National Laboratory`s High Speed Solid State Imager Test Station (HSTS) which features PC-based programmable clock waveform generation (Tektronix DAS 9200) and synchronously clocked Digital Sampling Oscilloscopes (DSOs) (LeCroy 9424/9314 series) for CCD pixel data acquisition, analysis and storage. The HSTS also provided special designed optical pinhole array test patterns in the 5-to-50 micron diameter range for use with Xenon Strobe and pulsed laser light sources to simultaneously provide multiplemore » single-pixel illumination patterns to study CCD point-spread-function (PSF) and pixel smear characteristics. The two CCDs tested, EEV model CCD-13 and EG&G Reticon model HSO512J, are both 512 {times} 512 pixel arrays with eight (8) and sixteen (16) video output ports respectively. Both devices are generically Frame Transfer CCDs (FT CCDs) designed for parallel bi-directional vertical readout to augment their multiport design for increased pixel rates over common single port serial readout architecture. Although both CCDs were tested similarly, differences in their designs precluded normalization or any direct comparisons of test results. Rate dependent parameters investigated include S/N, PSF, and MTF. The performance observed for the two imagers at various pixel rates from selected typical output ports is discussed.« less

Small-angle solution scattering using the mixed-mode pixel array detector.

PubMed

Koerner, Lucas J; Gillilan, Richard E; Green, Katherine S; Wang, Suntao; Gruner, Sol M

2011-03-01

Solution small-angle X-ray scattering (SAXS) measurements were obtained using a 128 × 128 pixel X-ray mixed-mode pixel array detector (MMPAD) with an 860 µs readout time. The MMPAD offers advantages for SAXS experiments: a pixel full-well of >2 × 10(7) 10 keV X-rays, a maximum flux rate of 10(8) X-rays pixel(-1) s(-1), and a sub-pixel point-spread function. Data from the MMPAD were quantitatively compared with data from a charge-coupled device (CCD) fiber-optically coupled to a phosphor screen. MMPAD solution SAXS data from lysozyme solutions were of equal or better quality than data captured by the CCD. The read-noise (normalized by pixel area) of the MMPAD was less than that of the CCD by an average factor of 3.0. Short sample-to-detector distances were required owing to the small MMPAD area (19.2 mm × 19.2 mm), and were revealed to be advantageous with respect to detector read-noise. As predicted by the Shannon sampling theory and confirmed by the acquisition of lysozyme solution SAXS curves, the MMPAD at short distances is capable of sufficiently sampling a solution SAXS curve for protein shape analysis. The readout speed of the MMPAD was demonstrated by continuously monitoring lysozyme sample evolution as radiation damage accumulated. These experiments prove that a small suitably configured MMPAD is appropriate for time-resolved solution scattering measurements.

Fast Imaging Detector Readout Circuits with In-Pixel ADCs for Fourier Transform Imaging Spectrometers

NASA Technical Reports Server (NTRS)

Rider, D.; Blavier, J-F.; Cunningham, T.; Hancock, B.; Key, R.; Pannell, Z.; Sander, S.; Seshadri, S.; Sun, C.; Wrigley, C.

2011-01-01

Focal plane arrays (FPAs) with high frame rates and many pixels benefit several upcoming Earth science missions including GEO-CAPE, GACM, and ACE by enabling broader spatial coverage and higher spectral resolution. FPAs for the PanFTS, a high spatial resolution Fourier transform spectrometer and a candidate instrument for the GEO-CAPE mission are the focus of the developments reported here, but this FPA technology has the potential to enable a variety of future measurements and instruments. The ESTO ACT Program funded the developed of a fast readout integrated circuit (ROIC) based on an innovative in-pixel analog-to-digital converter (ADC). The 128 X 128 pixel ROIC features 60 ?m pixels, a 14-bit ADC in each pixel and operates at a continuous frame rate of 14 kHz consuming only 1.1 W of power. The ROIC outputs digitized data completely eliminating the bulky, power consuming signal chains needed by conventional FPAs. The 128 X 128 pixel ROIC has been fabricated in CMOS and tested at the Jet Propulsion Laboratory. The current version is designed to be hybridized with PIN photodiode arrays via indium bump bonding for light detection in the visible and ultraviolet spectral regions. However, the ROIC design incorporates a small photodiode in each cell to permit detailed characterization of the ROICperformance without the need for hybridization. We will describe the essential features of the ROIC design and present results of ROIC performance measurements.

Large Format, Background Limited Arrays of Kinetic Inductance Detectors for Sub-mm Astronomy

NASA Astrophysics Data System (ADS)

Baselmans, Jochem

2018-01-01

We present the development of large format imaging arrays for sub-mm astronomy based upon microwave Kinetic Inductance detectors and their read-out. In particular we focus on the arrays developed for the A-MKID instrument for the APEX telescope. AMKID contains 2 focal plane arrays, covering a field of view of 15?x15?. One array is optimized for the 350 GHz telluric window, the other for the 850 GHz window. Both arrays are constructed from four 61 x 61 mm detector chips, each of which contains up to 3400 detectors and up to 880 detectors per readout line. The detectors are lens antenna coupled MKIDs made from NbTiN and Aluminium that reach photon noise limited sensitivity in combination with a high optical coupling. The lens-antenna radiation coupling enables the use of 4K optics and Lyot stop due to the intrinsic directivity of the detector beam, allowing a simple cryogenic architecture. We discuss the pixel design and verification, detector packaging and the array performance. We will also discuss the readout system, which is a combination of a digital and analog back-end that can read-out up to 4000 pixels simultaneously using frequency division multiplexing.

Vectorized image segmentation via trixel agglomeration

DOEpatents

Prasad, Lakshman [Los Alamos, NM; Skourikhine, Alexei N [Los Alamos, NM

2006-10-24

A computer implemented method transforms an image comprised of pixels into a vectorized image specified by a plurality of polygons that can be subsequently used to aid in image processing and understanding. The pixelated image is processed to extract edge pixels that separate different colors and a constrained Delaunay triangulation of the edge pixels forms a plurality of triangles having edges that cover the pixelated image. A color for each one of the plurality of triangles is determined from the color pixels within each triangle. A filter is formed with a set of grouping rules related to features of the pixelated image and applied to the plurality of triangle edges to merge adjacent triangles consistent with the filter into polygons having a plurality of vertices. The pixelated image may be then reformed into an array of the polygons, that can be represented collectively and efficiently by standard vector image.

New amorphous-silicon image sensor for x-ray diagnostic medical imaging applications

NASA Astrophysics Data System (ADS)

Weisfield, Richard L.; Hartney, Mark A.; Street, Robert A.; Apte, Raj B.

1998-07-01

This paper introduces new high-resolution amorphous Silicon (a-Si) image sensors specifically configured for demonstrating film-quality medical x-ray imaging capabilities. The devices utilizes an x-ray phosphor screen coupled to an array of a-Si photodiodes for detecting visible light, and a-Si thin-film transistors (TFTs) for connecting the photodiodes to external readout electronics. We have developed imagers based on a pixel size of 127 micrometer X 127 micrometer with an approximately page-size imaging area of 244 mm X 195 mm, and array size of 1,536 data lines by 1,920 gate lines, for a total of 2.95 million pixels. More recently, we have developed a much larger imager based on the same pixel pattern, which covers an area of approximately 406 mm X 293 mm, with 2,304 data lines by 3,200 gate lines, for a total of nearly 7.4 million pixels. This is very likely to be the largest image sensor array and highest pixel count detector fabricated on a single substrate. Both imagers connect to a standard PC and are capable of taking an image in a few seconds. Through design rule optimization we have achieved a light sensitive area of 57% and optimized quantum efficiency for x-ray phosphor output in the green part of the spectrum, yielding an average quantum efficiency between 500 and 600 nm of approximately 70%. At the same time, we have managed to reduce extraneous leakage currents on these devices to a few fA per pixel, which allows for very high dynamic range to be achieved. We have characterized leakage currents as a function of photodiode bias, time and temperature to demonstrate high stability over these large sized arrays. At the electronics level, we have adopted a new generation of low noise, charge- sensitive amplifiers coupled to 12-bit A/D converters. Considerable attention was given to reducing electronic noise in order to demonstrate a large dynamic range (over 4,000:1) for medical imaging applications. Through a combination of low data lines capacitance, readout amplifier design, optimized timing, and noise cancellation techniques, we achieve 1,000e to 2,000e of noise for the page size and large size arrays, respectively. This allows for true 12-bit performance and quantum limited images over a wide range of x-ray exposures. Various approaches to reducing line correlated noise have been implemented and will be discussed. Images documenting the improved performance will be presented. Avenues for improvement are under development, including higher resolution 97 micrometer pixel imagers, further improvements in detective quantum efficiency, and characterization of dynamic behavior.

High event rate ROICs (HEROICs) for astronomical UV photon counting detectors

NASA Astrophysics Data System (ADS)

Harwit, Alex; France, Kevin; Argabright, Vic; Franka, Steve; Freymiller, Ed; Ebbets, Dennis

2014-07-01

The next generation of astronomical photocathode / microchannel plate based UV photon counting detectors will overcome existing count rate limitations by replacing the anode arrays and external cabled electronics with anode arrays integrated into imaging Read Out Integrated Circuits (ROICs). We have fabricated a High Event Rate ROIC (HEROIC) consisting of a 32 by 32 array of 55 μm square pixels on a 60 μm pitch. The pixel sensitivity (threshold) has been designed to be globally programmable between 1 × 103 and 1 × 106 electrons. To achieve the sensitivity of 1 × 103 electrons, parasitic capacitances had to be minimized and this was achieved by fabricating the ROIC in a 65 nm CMOS process. The ROIC has been designed to support pixel counts up to 4096 events per integration period at rates up to 1 MHz per pixel. Integration time periods can be controlled via an external signal with a time resolution of less than 1 microsecond enabling temporally resolved imaging and spectroscopy of astronomical sources. An electrical injection port is provided to verify functionality and performance of each ROIC prior to vacuum integration with a photocathode and microchannel plate amplifier. Test results on the first ROICs using the electrical injection port demonstrate sensitivities between 3 × 103 and 4 × 105 electrons are achieved. A number of fixes are identified for a re-spin of this ROIC.

Pixel-level tunable liquid crystal lenses for auto-stereoscopic display

NASA Astrophysics Data System (ADS)

Li, Kun; Robertson, Brian; Pivnenko, Mike; Chu, Daping; Zhou, Jiong; Yao, Jun

2014-02-01

Mobile video and gaming are now widely used, and delivery of a glass-free 3D experience is of both research and development interest. The key drawbacks of a conventional 3D display based on a static lenticular lenslet array and parallax barriers are low resolution, limited viewing angle and reduced brightness, mainly because of the need of multiple-pixels for each object point. This study describes the concept and performance of pixel-level cylindrical liquid crystal (LC) lenses, which are designed to steer light to the left and right eye sequentially to form stereo parallax. The width of the LC lenses can be as small as 20-30 μm, so that the associated auto-stereoscopic display will have the same resolution as the 2D display panel in use. Such a thin sheet of tunable LC lens array can be applied directly on existing mobile displays, and can deliver 3D viewing experience while maintaining 2D viewing capability. Transparent electrodes were laser patterned to achieve the single pixel lens resolution, and a high birefringent LC material was used to realise a large diffraction angle for a wide field of view. Simulation was carried out to model the intensity profile at the viewing plane and optimise the lens array based on the measured LC phase profile. The measured viewing angle and intensity profile were compared with the simulation results.

Segmentation and quantification of materials with energy discriminating computed tomography: A phantom study

PubMed Central

Le, Huy Q.; Molloi, Sabee

2011-01-01

Purpose: To experimentally investigate whether a computed tomography (CT) system based on CdZnTe (CZT) detectors in conjunction with a least-squares parameter estimation technique can be used to decompose four different materials. Methods: The material decomposition process was divided into a segmentation task and a quantification task. A least-squares minimization algorithm was used to decompose materials with five measurements of the energy dependent linear attenuation coefficients. A small field-of-view energy discriminating CT system was built. The CT system consisted of an x-ray tube, a rotational stage, and an array of CZT detectors. The CZT array was composed of 64 pixels, each of which is 0.8×0.8×3 mm. Images were acquired at 80 kVp in fluoroscopic mode at 50 ms per frame. The detector resolved the x-ray spectrum into energy bins of 22–32, 33–39, 40–46, 47–56, and 57–80 keV. Four phantoms were constructed from polymethylmethacrylate (PMMA), polyethylene, polyoxymethylene, hydroxyapatite, and iodine. Three phantoms were composed of three materials with embedded hydroxyapatite (50, 150, 250, and 350 mg∕ml) and iodine (4, 8, 12, and 16 mg∕ml) contrast elements. One phantom was composed of four materials with embedded hydroxyapatite (150 and 350 mg∕ml) and iodine (8 and 16 mg∕ml). Calibrations consisted of PMMA phantoms with either hydroxyapatite (100, 200, 300, 400, and 500 mg∕ml) or iodine (5, 15, 25, 35, and 45 mg∕ml) embedded. Filtered backprojection and a ramp filter were used to reconstruct images from each energy bin. Material segmentation and quantification were performed and compared between different phantoms. Results: All phantoms were decomposed accurately, but some voxels in the base material regions were incorrectly identified. Average quantification errors of hydroxyapatite∕iodine were 9.26∕7.13%, 7.73∕5.58%, and 12.93∕8.23% for the three-material PMMA, polyethylene, and polyoxymethylene phantoms, respectively. The average errors for the four-material phantom were 15.62% and 2.76% for hydroxyapatite and iodine, respectively. Conclusions: The calibrated least-squares minimization technique of decomposition performed well in breast imaging tasks with an energy resolving detector. This method can provide material basis images containing concentrations of the relevant materials that can potentially be valuable in the diagnostic process. PMID:21361191

Purification of CdZnTe by electromigration

NASA Astrophysics Data System (ADS)

Kim, K.; Kim, Sangsu; Hong, Jinki; Lee, Jinseo; Hong, Taekwon; Bolotnikov, A. E.; Camarda, G. S.; James, R. B.

2015-04-01

Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 μm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. A CZT detector fabricated from the middle portion of the electro-migrated CZT boule showed an improved mobility-lifetime product of 0.91 × 10-2 cm2/V, compared with that of 1.4 × 10-3 cm2/V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.

Purification of CdZnTe by Electromigration

DOE PAGES

Kim, K.; Kim, Sangsu; Hong, Jinki; ...

2015-04-14

Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 lm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. Furthermore, a CZT detector fabricated from the middle portion of themore » electromigrated CZT boule showed an improved mobility-lifetime product of 0.91 10 -2 cm 2 /V, compared to that of 1.4 10 -3 cm 2 /V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.« less

Latest developments of 10μm pitch HgCdTe diode array from the legacy to the extrinsic technology

NASA Astrophysics Data System (ADS)

Péré-Laperne, Nicolas; Berthoz, Jocelyn; Taalat, Rachid; Rubaldo, Laurent; Kerlain, Alexandre; Carrère, Emmanuel; Dargent, Loïc.

2016-05-01

Sofradir recently presented Daphnis, its latest 10 μm pitch product family. Both Daphnis XGA and HD720 are 10μm pitch mid-wave infrared focal plane array. Development of small pixel pitch is opening the way to very compact products with a high spatial resolution. This new product is taking part in the HOT technology competition allowing reductions in size, weight and power of the overall package. This paper presents the recent developments achieved at Sofradir to make the 10μm pitch HgCdTe focal plane array based on the legacy technology. Electrical and electro-optical characterizations are presented to define the appropriate design of 10μm pitch diode array. The technological tradeoffs are explained to lower the dark current, to keep high quantum efficiency with a high operability above 110K, F/4. Also, Sofradir recently achieved outstanding Modulation Transfer Function (MTF) demonstration at this pixel pitch, which clearly demonstrates the benefit to users of adopting 10μm pixel pitch focal plane array based detectors. Furthermore, the HgCdTe technology has demonstrated an increase of the operating temperature, plus 40K, moving from the legacy to the P-on-n one at a 15μm pitch in mid-wave band. The first realizations using the extrinsic P-on-n technology and the characterizations of diodes with a 10μm pitch neighborhood will be presented in both mid-wave and long-wave bands.

Spatial-heterodyne sampling requirements in the off-axis pupil plane recording geometry for deep-turbulence wavefront sensing

NASA Astrophysics Data System (ADS)

Banet, Matthias T.; Spencer, Mark F.

2017-09-01

Spatial-heterodyne interferometry is a robust solution for deep-turbulence wavefront sensing. With that said, this paper analyzes the focal-plane array sampling requirements for spatial-heterodyne systems operating in the off-axis pupil plane recording geometry. To assess spatial-heterodyne performance, we use a metric referred to as the field-estimated Strehl ratio. We first develop an analytical description of performance with respect to the number of focal-plane array pixels across the Fried coherence diameter and then verify our results with wave-optics simulations. The analysis indicates that at approximately 5 focal-plane array pixels across the Fried coherence diameter, the field-estimated Strehl ratios begin to exceed 0:9 which is indicative of largely diffraction-limited results.

Coincidence detection of spatially correlated photon pairs with a monolithic time-resolving detector array.

PubMed

Unternährer, Manuel; Bessire, Bänz; Gasparini, Leonardo; Stoppa, David; Stefanov, André

2016-12-12

We demonstrate coincidence measurements of spatially entangled photons by means of a multi-pixel based detection array. The sensor, originally developed for positron emission tomography applications, is a fully digital 8×16 silicon photomultiplier array allowing not only photon counting but also per-pixel time stamping of the arrived photons with an effective resolution of 265 ps. Together with a frame rate of 500 kfps, this property exceeds the capabilities of conventional charge-coupled device cameras which have become of growing interest for the detection of transversely correlated photon pairs. The sensor is used to measure a second-order correlation function for various non-collinear configurations of entangled photons generated by spontaneous parametric down-conversion. The experimental results are compared to theory.

A 72 × 60 Angle-Sensitive SPAD Imaging Array for Lens-less FLIM.

PubMed

Lee, Changhyuk; Johnson, Ben; Jung, TaeSung; Molnar, Alyosha

2016-09-02

We present a 72 × 60, angle-sensitive single photon avalanche diode (A-SPAD) array for lens-less 3D fluorescence lifetime imaging. An A-SPAD pixel consists of (1) a SPAD to provide precise photon arrival time where a time-resolved operation is utilized to avoid stimulus-induced saturation, and (2) integrated diffraction gratings on top of the SPAD to extract incident angles of the incoming light. The combination enables mapping of fluorescent sources with different lifetimes in 3D space down to micrometer scale. Futhermore, the chip presented herein integrates pixel-level counters to reduce output data-rate and to enable a precise timing control. The array is implemented in standard 180 nm complementary metal-oxide-semiconductor (CMOS) technology and characterized without any post-processing.

Maskless lithography

DOEpatents

Sweatt, William C.; Stulen, Richard H.

1999-01-01

The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides.

Maskless lithography

DOEpatents

Sweatt, W.C.; Stulen, R.H.

1999-02-09

The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides. 12 figs.

Method for maskless lithography

DOEpatents

Sweatt, William C.; Stulen, Richard H.

2000-01-01

The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of these individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides.

A 72 × 60 Angle-Sensitive SPAD Imaging Array for Lens-less FLIM

PubMed Central

Lee, Changhyuk; Johnson, Ben; Jung, TaeSung; Molnar, Alyosha

2016-01-01

We present a 72 × 60, angle-sensitive single photon avalanche diode (A-SPAD) array for lens-less 3D fluorescence lifetime imaging. An A-SPAD pixel consists of (1) a SPAD to provide precise photon arrival time where a time-resolved operation is utilized to avoid stimulus-induced saturation, and (2) integrated diffraction gratings on top of the SPAD to extract incident angles of the incoming light. The combination enables mapping of fluorescent sources with different lifetimes in 3D space down to micrometer scale. Futhermore, the chip presented herein integrates pixel-level counters to reduce output data-rate and to enable a precise timing control. The array is implemented in standard 180 nm complementary metal-oxide-semiconductor (CMOS) technology and characterized without any post-processing. PMID:27598170

A CMOS Time-Resolved Fluorescence Lifetime Analysis Micro-System

PubMed Central

Rae, Bruce R.; Muir, Keith R.; Gong, Zheng; McKendry, Jonathan; Girkin, John M.; Gu, Erdan; Renshaw, David; Dawson, Martin D.; Henderson, Robert K.

2009-01-01

We describe a CMOS-based micro-system for time-resolved fluorescence lifetime analysis. It comprises a 16 × 4 array of single-photon avalanche diodes (SPADs) fabricated in 0.35 μm high-voltage CMOS technology with in-pixel time-gated photon counting circuitry and a second device incorporating an 8 × 8 AlInGaN blue micro-pixellated light-emitting diode (micro-LED) array bump-bonded to an equivalent array of LED drivers realized in a standard low-voltage 0.35 μm CMOS technology, capable of producing excitation pulses with a width of 777 ps (FWHM). This system replaces instrumentation based on lasers, photomultiplier tubes, bulk optics and discrete electronics with a PC-based micro-system. Demonstrator lifetime measurements of colloidal quantum dot and Rhodamine samples are presented. PMID:22291564

Readout and DAQ for Pixel Detectors

NASA Astrophysics Data System (ADS)

Platkevic, Michal

2010-01-01

Data readout and acquisition control of pixel detectors demand the transfer of significantly a large amounts of bits between the detector and the computer. For this purpose dedicated interfaces are used which are designed with focus on features like speed, small dimensions or flexibility of use such as digital signal processors, field-programmable gate arrays (FPGA) and USB communication ports. This work summarizes the readout and DAQ system built for state-of-the-art pixel detectors of the Medipix family.

Photovoltaic Retinal Prosthesis for Restoring Sight to Patients Blinded by Retinal Injury or Degeneration

DTIC Science & Technology

2016-02-01

are rapidly expanding [1][2]. Cochlear implants [3] have seen the most remarkable success in sensory neuroprosthetics, while retinal implants [4][5...intensities: Imax (bright pixels) and Imin (dark pixels). In the common return configurations (connected and monopolar), the current flowing through the...array forces the injected current to flow to the back side, which results in a potential build-up in front of the device. Near each pixel (within

A new generation of small pixel pitch/SWaP cooled infrared detectors

NASA Astrophysics Data System (ADS)

Espuno, L.; Pacaud, O.; Reibel, Y.; Rubaldo, L.; Kerlain, A.; Péré-Laperne, N.; Dariel, A.; Roumegoux, J.; Brunner, A.; Kessler, A.; Gravrand, O.; Castelein, P.

2015-10-01

Following clear technological trends, the cooled IR detectors market is now in demand for smaller, more efficient and higher performance products. This demand pushes products developments towards constant innovations on detectors, read-out circuits, proximity electronics boards, and coolers. Sofradir was first to show a 10μm focal plane array (FPA) at DSS 2012, and announced the DAPHNIS 10μm product line back in 2014. This pixel pitch is a key enabler for infrared detectors with increased resolution. Sofradir recently achieved outstanding products demonstrations at this pixel pitch, which clearly demonstrate the benefits of adopting 10μm pixel pitch focal plane array-based detectors. Both HD and XGA Daphnis 10μm products also benefit from a global video datapath efficiency improvement by transitioning to digital video interfaces. Moreover, innovative smart pixels functionalities drastically increase product versatility. In addition to this strong push towards a higher pixels density, Sofradir acknowledges the need for smaller and lower power cooled infrared detector. Together with straightforward system interfaces and better overall performances, latest technological advances on SWAP-C (Size, Weight, Power and Cost) Sofradir products enable the advent of a new generation of high performance portable and agile systems (handheld thermal imagers, unmanned aerial vehicles, light gimbals etc...). This paper focuses on those features and performances that can make an actual difference in the field.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ross, Steve; Haji-Sheikh, Michael; Huntington, Andrew

The Voxtel VX-798 is a prototype X-ray pixel array detector (PAD) featuring a silicon sensor photodiode array of 48 x 48 pixels, each 130 mu m x 130 mu m x 520 mu m thick, coupled to a CMOS readout application specific integrated circuit (ASIC). The first synchrotron X-ray characterization of this detector is presented, and its ability to selectively count individual X-rays within two independent arrival time windows, a programmable energy range, and localized to a single pixel is demonstrated. During our first trial run at Argonne National Laboratory's Advance Photon Source, the detector achieved a 60 ns gatingmore » time and 700 eV full width at half-maximum energy resolution in agreement with design parameters. Each pixel of the PAD holds two independent digital counters, and the discriminator for X-ray energy features both an upper and lower threshold to window the energy of interest discarding unwanted background. This smart-pixel technology allows energy and time resolution to be set and optimized in software. It is found that the detector linearity follows an isolated dead-time model, implying that megahertz count rates should be possible in each pixel. Measurement of the line and point spread functions showed negligible spatial blurring. When combined with the timing structure of the synchrotron storage ring, it is demonstrated that the area detector can perform both picosecond time-resolved X-ray diffraction and fluorescence spectroscopy measurements.« less

Design of an ultra low power CMOS pixel sensor for a future neutron personal dosimeter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Y.; Hu-Guo, C.; Husson, D.

2011-07-01

Despite a continuously increasing demand, neutron electronic personal dosimeters (EPDs) are still far from being completely established because their development is a very difficult task. A low-noise, ultra low power consumption CMOS pixel sensor for a future neutron personal dosimeter has been implemented in a 0.35 {mu}m CMOS technology. The prototype is composed of a pixel array for detection of charged particles, and the readout electronics is integrated on the same substrate for signal processing. The excess electrons generated by an impinging particle are collected by the pixel array. The charge collection time and the efficiency are the crucial pointsmore » of a CMOS detector. The 3-D device simulations using the commercially available Synopsys-SENTAURUS package address the detailed charge collection process. Within a time of 1.9 {mu}s, about 59% electrons created by the impact particle are collected in a cluster of 4 x 4 pixels with the pixel pitch of 80 {mu}m. A charge sensitive preamplifier (CSA) and a shaper are employed in the frond-end readout. The tests with electrical signals indicate that our prototype with a total active area of 2.56 x 2.56 mm{sup 2} performs an equivalent noise charge (ENC) of less than 400 e - and 314 {mu}W power consumption, leading to a promising prototype. (authors)« less

Mass test of AdvanSiD model ASD-NUV3S-P SiliconPMs for the Pixel Timing Counter of the MEG II experiment

NASA Astrophysics Data System (ADS)

Rossella, M.; Bariani, S.; Barnaba, O.; Cattaneo, P. W.; Cervi, T.; Menegolli, A.; Nardò, R.; Prata, M. C.; Romano, E.; Scagliotti, C.; Simonetta, M.; Vercellati, F.

2017-02-01

The MEG II Timing Counter will measure the positron time of arrival with a resolution of 30 ps relying on two arrays of scintillator pixels read out by 6144 Silicon Photomultipliers (SiPMs) from AdvanSiD. They must be characterized, measuring their breakdown voltage, to assure that the gains of the SiPMs of each pixel are as uniform as possible, to maximize the pixel resolution. To do this an automatic test system that can measure sequentially the parameters of 32 devices has been developed.

Miniature infrared hyperspectral imaging sensor for airborne applications

NASA Astrophysics Data System (ADS)

Hinnrichs, Michele; Hinnrichs, Bradford; McCutchen, Earl

2017-05-01

Pacific Advanced Technology (PAT) has developed an infrared hyperspectral camera, both MWIR and LWIR, small enough to serve as a payload on a miniature unmanned aerial vehicles. The optical system has been integrated into the cold-shield of the sensor enabling the small size and weight of the sensor. This new and innovative approach to infrared hyperspectral imaging spectrometer uses micro-optics and will be explained in this paper. The micro-optics are made up of an area array of diffractive optical elements where each element is tuned to image a different spectral region on a common focal plane array. The lenslet array is embedded in the cold-shield of the sensor and actuated with a miniature piezo-electric motor. This approach enables rapid infrared spectral imaging with multiple spectral images collected and processed simultaneously each frame of the camera. This paper will present our optical mechanical design approach which results in an infrared hyper-spectral imaging system that is small enough for a payload on a mini-UAV or commercial quadcopter. The diffractive optical elements used in the lenslet array are blazed gratings where each lenslet is tuned for a different spectral bandpass. The lenslets are configured in an area array placed a few millimeters above the focal plane and embedded in the cold-shield to reduce the background signal normally associated with the optics. We have developed various systems using a different number of lenslets in the area array. Depending on the size of the focal plane and the diameter of the lenslet array will determine the spatial resolution. A 2 x 2 lenslet array will image four different spectral images of the scene each frame and when coupled with a 512 x 512 focal plane array will give spatial resolution of 256 x 256 pixel each spectral image. Another system that we developed uses a 4 x 4 lenslet array on a 1024 x 1024 pixel element focal plane array which gives 16 spectral images of 256 x 256 pixel resolution each frame.

Infrared hyperspectral imaging miniaturized for UAV applications

NASA Astrophysics Data System (ADS)

Hinnrichs, Michele; Hinnrichs, Bradford; McCutchen, Earl

2017-02-01

Pacific Advanced Technology (PAT) has developed an infrared hyperspectral camera, both MWIR and LWIR, small enough to serve as a payload on a miniature unmanned aerial vehicles. The optical system has been integrated into the cold-shield of the sensor enabling the small size and weight of the sensor. This new and innovative approach to infrared hyperspectral imaging spectrometer uses micro-optics and will be explained in this paper. The micro-optics are made up of an area array of diffractive optical elements where each element is tuned to image a different spectral region on a common focal plane array. The lenslet array is embedded in the cold-shield of the sensor and actuated with a miniature piezo-electric motor. This approach enables rapid infrared spectral imaging with multiple spectral images collected and processed simultaneously each frame of the camera. This paper will present our optical mechanical design approach which results in an infrared hyper-spectral imaging system that is small enough for a payload on a mini-UAV or commercial quadcopter. Also, an example of how this technology can easily be used to quantify a hydrocarbon gas leak's volume and mass flowrates. The diffractive optical elements used in the lenslet array are blazed gratings where each lenslet is tuned for a different spectral bandpass. The lenslets are configured in an area array placed a few millimeters above the focal plane and embedded in the cold-shield to reduce the background signal normally associated with the optics. We have developed various systems using a different number of lenslets in the area array. Depending on the size of the focal plane and the diameter of the lenslet array will determine the spatial resolution. A 2 x 2 lenslet array will image four different spectral images of the scene each frame and when coupled with a 512 x 512 focal plane array will give spatial resolution of 256 x 256 pixel each spectral image. Another system that we developed uses a 4 x 4 lenslet array on a 1024 x 1024 pixel element focal plane array which gives 16 spectral images of 256 x 256 pixel resolution each frame.

Quantum Cascade Laser Tuning by Digital Micromirror Array-controlled External Cavity

DTIC Science & Technology

2014-01-01

P. Vujkovic-Cvijin, B. Gregor, A. C. Samuels, E. S. Roese, Quantum cascade laser tuning by digital micromirror array-controlled external cavity...REPORT TYPE 3. DATES COVERED 00-00-2014 to 00-00-2014 4. TITLE AND SUBTITLE Quantum cascade laser tuning by digital micromirror array-controlled...dimensional digital micromirror array (DMA) is described. The laser is tuned by modulating the reflectivity of DMA micromirror pixels under computer

Optical design of microlens array for CMOS image sensors

NASA Astrophysics Data System (ADS)

Zhang, Rongzhu; Lai, Liping

2016-10-01

The optical crosstalk between the pixel units can influence the image quality of CMOS image sensor. In the meantime, the duty ratio of CMOS is low because of its pixel structure. These two factors cause the low detection sensitivity of CMOS. In order to reduce the optical crosstalk and improve the fill factor of CMOS image sensor, a microlens array has been designed and integrated with CMOS. The initial parameters of the microlens array have been calculated according to the structure of a CMOS. Then the parameters have been optimized by using ZEMAX and the microlens arrays with different substrate thicknesses have been compared. The results show that in order to obtain the best imaging quality, when the effect of optical crosstalk for CMOS is the minimum, the best distance between microlens array and CMOS is about 19.3 μm. When incident light successively passes through microlens array and the distance, obtaining the minimum facula is around 0.347 um in the active area. In addition, when the incident angle of the light is 0o 22o, the microlens array has obvious inhibitory effect on the optical crosstalk. And the anti-crosstalk distance between microlens array and CMOS is 0 μm 162 μm.

Applications of Digitized 3-D Position-Sensitive CdZnTe Spectrometers for National Security and Nuclear Nonproliferation

NASA Astrophysics Data System (ADS)

Streicher, Michael W.

A nuclear weapon detonation remains one of the gravest threats to the global community. Although the likelihood of a nuclear event remains small, the economic and political ramifications of an event are vast. The surest way to reduce the probability of an incident is to account for the special nuclear materials (SNM) which can be used to produce a nuclear weapon. Materials which can be used to manufacture a radiological dispersion device ("dirty bomb") must also be monitored. Rapidly-deployable, commercially-available, room-temperature imaging gamma-ray spectrometers are improving the ability of authorities to intelligently and quickly respond to threats. New electronics which digitally-sample the radiation-induced signals in CdZnTe detectors have expanded the capabilities of these sensors. This thesis explores national security applications where digital readout of CdZnTe detectors significantly enhances capabilities. Radioactive sources can be detected more quickly using digitally-sampled CdZnTe detector due to the improved energy resolution. The excellent energy resolution also improves the accuracy of measurements of uranium enrichment and allows users to measure plutonium grade. Small differences in the recorded gamma-ray energy spectrum can be used to estimate the effective atomic number and mass thickness of materials shielding SNM sources. Improved position resolution of gamma-ray interactions through digital readout allows high resolution gamma-ray images of SNM revealing information about the source configuration. CdZnTe sensors can detect the presence of neutrons, indirectly, through measurement of gamma rays released during capture of thermal neutrons by Cd-113 or inelastic scattering with any constituent nuclei. Fast neutrons, such as those released following fission, can be directly detected through elastic scattering interactions in the detector. Neutrons are a strong indicator of fissile material, and the background neutron rate is much lower than the gamma-ray background rate. Neutrons can more easily penetrate shielding materials as well which can greatly aid in the detection of shielded SNM. Digital CdZnTe readout enables the sensors to maintain excellent energy resolution at high count rates. Pulse pile-up and preamplifier decay can be monitored and corrected for on an event-by-event basis limiting energy resolution degradation in dose rates higher than 100 mR/hr. Finally, new iterations of the digital electronics have enhanced gamma-ray detection capabilities at high photon energies. Currently, gamma rays with energy up to 4.4 MeV have been detected. High-energy photon detection is critical for many proposed active interrogation systems.

Electronic displays using optically pumped luminescent semiconductor nanocrystals

DOEpatents

Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

2010-04-13

A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

CMOS Active-Pixel Image Sensor With Intensity-Driven Readout

NASA Technical Reports Server (NTRS)

Langenbacher, Harry T.; Fossum, Eric R.; Kemeny, Sabrina

1996-01-01

Proposed complementary metal oxide/semiconductor (CMOS) integrated-circuit image sensor automatically provides readouts from pixels in order of decreasing illumination intensity. Sensor operated in integration mode. Particularly useful in number of image-sensing tasks, including diffractive laser range-finding, three-dimensional imaging, event-driven readout of sparse sensor arrays, and star tracking.

Electronic displays using optically pumped luminescent semiconductor nanocrystals

DOEpatents

Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

2005-03-08

A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

Electronic displays using optically pumped luminescent semiconductor nanocrystals

DOEpatents

Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

2015-06-23

A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

Electronic displays using optically pumped luminescent semiconductor nanocrystals

DOEpatents

Weiss, Shimon; Schlamp, Michael C; Alivisatos, A. Paul

2014-02-11

A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

Electronic displays using optically pumped luminescent semiconductor nanocrystals

DOEpatents

Weiss, Shimon; Schlamp, Michael C.; Alivisatos, Paul A.

2015-11-10

A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

Electronic displays using optically pumped luminescent semiconductor nanocrystals

DOEpatents

Weiss, Shimon [Pinole, CA; Schlamp, Michael C [Plainsboro, NJ; Alivisatos, A Paul [Oakland, CA

2011-09-27

A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

Electronic displays using optically pumped luminescent semiconductor nanocrystals

DOEpatents

Weiss, Shimon; Schlam, Michael C; Alivisatos, A. Paul

2014-03-25

A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

Electronic displays using optically pumped luminescent semiconductor nanocrystals

DOEpatents

Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

2017-06-06

A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

Experimental study of HgCdTe imaging sensor irradiated by pulse CO2 laser

NASA Astrophysics Data System (ADS)

Wang, Xi; Wang, Qingsheng; Hu, Hongtao; Fang, Xiaodong; Nie, Jinsong

2016-10-01

The damages of TEA-CO2 laser to HgCdTe imaging sensor are researched experimentally and theoretically. The shadows, cracks and dark line are observed. There is a gap between photosensitive layer and CdZnTe which decreases light transmittance, so that the shadows occur. It shows that the crack damages begin from photosensitive layer. The sensor is irradiated by pulse laser, the absorptivity of photosensitive layer is strong, sharp temperatures fluctuations inside the sensor, leading to stress. With the stress increased, the cracks are observed on the surface of the detector. Cracked the surface of the substrate, and effective transmission reduced, which caused gray pixel response decline. The dark line in image occurs several times because Hg atoms separate out from the detector and gather together at the Si-COMS which makes a short circuit between silicon substrate and signal choice line. The volatility of Hg makes the short circuit is unstable, resulting in the dark line repeated in the output image, but the short circuit occurs by chance.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lecomte, Roger; Arpin, Louis; Beaudoin, Jean-Franç

Purpose: LabPET II is a new generation APD-based PET scanner designed to achieve sub-mm spatial resolution using truly pixelated detectors and highly integrated parallel front-end processing electronics. Methods: The basic element uses a 4×8 array of 1.12×1.12 mm{sup 2} Lu{sub 1.9}Y{sub 0.1}SiO{sub 5}:Ce (LYSO) scintillator pixels with one-to-one coupling to a 4×8 pixelated monolithic APD array mounted on a ceramic carrier. Four detector arrays are mounted on a daughter board carrying two flip-chip, 64-channel, mixed-signal, application-specific integrated circuits (ASIC) on the backside interfacing to two detector arrays each. Fully parallel signal processing was implemented in silico by encoding time andmore » energy information using a dual-threshold Time-over-Threshold (ToT) scheme. The self-contained 128-channel detector module was designed as a generic component for ultra-high resolution PET imaging of small to medium-size animals. Results: Energy and timing performance were optimized by carefully setting ToT thresholds to minimize the noise/slope ratio. ToT spectra clearly show resolved 511 keV photopeak and Compton edge with ToT resolution well below 10%. After correction for nonlinear ToT response, energy resolution is typically 24±2% FWHM. Coincidence time resolution between opposing 128-channel modules is below 4 ns FWHM. Initial imaging results demonstrate that 0.8 mm hot spots of a Derenzo phantom can be resolved. Conclusion: A new generation PET scanner featuring truly pixelated detectors was developed and shown to achieve a spatial resolution approaching the physical limit of PET. Future plans are to integrate a small-bore dedicated mouse version of the scanner within a PET/CT platform.« less

First light from a very large area pixel array for high-throughput x-ray polarimetry

NASA Astrophysics Data System (ADS)

Bellazzini, R.; Spandre, G.; Minuti, M.; Baldini, L.; Brez, A.; Cavalca, F.; Latronico, L.; Omodei, N.; Massai, M. M.; Sgrò, C.; Costa, E.; Soffitta, P.; Krummenacher, F.; de Oliveira, R.

2006-06-01

We report on a large active area (15x15mm2), high channel density (470 pixels/mm2), self-triggering CMOS analog chip that we have developed as pixelized charge collecting electrode of a Micropattern Gas Detector. This device, which represents a big step forward both in terms of size and performance, is the last version of three generations of custom ASICs of increasing complexity. The CMOS pixel array has the top metal layer patterned in a matrix of 105600 hexagonal pixels at 50μm pitch. Each pixel is directly connected to the underneath full electronics chain which has been realized in the remaining five metal and single poly-silicon layers of a standard 0.18μm CMOS VLSI technology. The chip has customizable self-triggering capability and includes a signal pre-processing function for the automatic localization of the event coordinates. In this way it is possible to reduce significantly the readout time and the data volume by limiting the signal output only to those pixels belonging to the region of interest. The very small pixel area and the use of a deep sub-micron CMOS technology has brought the noise down to 50 electrons ENC. Results from in depth tests of this device when coupled to a fine pitch (50μm on a triangular pattern) Gas Electron Multiplier are presented. The matching of readout and gas amplification pitch allows getting optimal results. The application of this detector for Astronomical X-Ray Polarimetry is discussed. The experimental detector response to polarized and unpolarized X-ray radiation when working with two gas mixtures and two different photon energies is shown. Results from a full MonteCarlo simulation for several galactic and extragalactic astronomical sources are also reported.

Wavelength scanning achieves pixel super-resolution in holographic on-chip microscopy

NASA Astrophysics Data System (ADS)

Luo, Wei; Göröcs, Zoltan; Zhang, Yibo; Feizi, Alborz; Greenbaum, Alon; Ozcan, Aydogan

2016-03-01

Lensfree holographic on-chip imaging is a potent solution for high-resolution and field-portable bright-field imaging over a wide field-of-view. Previous lensfree imaging approaches utilize a pixel super-resolution technique, which relies on sub-pixel lateral displacements between the lensfree diffraction patterns and the image sensor's pixel-array, to achieve sub-micron resolution under unit magnification using state-of-the-art CMOS imager chips, commonly used in e.g., mobile-phones. Here we report, for the first time, a wavelength scanning based pixel super-resolution technique in lensfree holographic imaging. We developed an iterative super-resolution algorithm, which generates high-resolution reconstructions of the specimen from low-resolution (i.e., under-sampled) diffraction patterns recorded at multiple wavelengths within a narrow spectral range (e.g., 10-30 nm). Compared with lateral shift-based pixel super-resolution, this wavelength scanning approach does not require any physical shifts in the imaging setup, and the resolution improvement is uniform in all directions across the sensor-array. Our wavelength scanning super-resolution approach can also be integrated with multi-height and/or multi-angle on-chip imaging techniques to obtain even higher resolution reconstructions. For example, using wavelength scanning together with multi-angle illumination, we achieved a halfpitch resolution of 250 nm, corresponding to a numerical aperture of 1. In addition to pixel super-resolution, the small scanning steps in wavelength also enable us to robustly unwrap phase, revealing the specimen's optical path length in our reconstructed images. We believe that this new wavelength scanning based pixel super-resolution approach can provide competitive microscopy solutions for high-resolution and field-portable imaging needs, potentially impacting tele-pathology applications in resource-limited-settings.

Smart CMOS image sensor for lightning detection and imaging.

PubMed

Rolando, Sébastien; Goiffon, Vincent; Magnan, Pierre; Corbière, Franck; Molina, Romain; Tulet, Michel; Bréart-de-Boisanger, Michel; Saint-Pé, Olivier; Guiry, Saïprasad; Larnaudie, Franck; Leone, Bruno; Perez-Cuevas, Leticia; Zayer, Igor

2013-03-01

We present a CMOS image sensor dedicated to lightning detection and imaging. The detector has been designed to evaluate the potentiality of an on-chip lightning detection solution based on a smart sensor. This evaluation is performed in the frame of the predevelopment phase of the lightning detector that will be implemented in the Meteosat Third Generation Imager satellite for the European Space Agency. The lightning detection process is performed by a smart detector combining an in-pixel frame-to-frame difference comparison with an adjustable threshold and on-chip digital processing allowing an efficient localization of a faint lightning pulse on the entire large format array at a frequency of 1 kHz. A CMOS prototype sensor with a 256×256 pixel array and a 60 μm pixel pitch has been fabricated using a 0.35 μm 2P 5M technology and tested to validate the selected detection approach.

Systems and methods that generate height map models for efficient three dimensional reconstruction from depth information

DOEpatents

Frahm, Jan-Michael; Pollefeys, Marc Andre Leon; Gallup, David Robert

2015-12-08

Methods of generating a three dimensional representation of an object in a reference plane from a depth map including distances from a reference point to pixels in an image of the object taken from a reference point. Weights are assigned to respective voxels in a three dimensional grid along rays extending from the reference point through the pixels in the image based on the distances in the depth map from the reference point to the respective pixels, and a height map including an array of height values in the reference plane is formed based on the assigned weights. An n-layer height map may be constructed by generating a probabilistic occupancy grid for the voxels and forming an n-dimensional height map comprising an array of layer height values in the reference plane based on the probabilistic occupancy grid.

The Acquisition of Development of Advanced Processing Techniques for CCD Arrays.

DTIC Science & Technology

1981-01-01

E57B 96 x 2048 TDI imager production run. A minor change was incorporated on wafers #1-3; an in situ doped-polysilicon technique was used instead of the...2047, - 10 - Ab-A~ and 2048 . In some cases charge collection extends beyond these pixels. The excess signal is measured here as a percentage (Table...amount of spurious charge in pixels #2047 and 2048 is always greater than for pixels #2 and 1, respectively. This is because there is more unshielded area

VizieR Online Data Catalog: UWISH2 extended H2 emission line sources (Froebrich+, 2015)

NASA Astrophysics Data System (ADS)

Froebrich, D.; Makin, S. V.; Davis, C. J.; Gledhill, T. M.; Kim, Y.; Koo, B.-C.; Rowles, J.; Eisloffel, J.; Nicholas, J.; Lee, J. J.; Williamson, J.; Buckner, A. S. M.

2016-07-01

All data were acquired using the Wide Field Camera (WFCAM) on the United Kingdom Infrared Telescope (UKIRT), Mauna Kea, Hawaii. WFCAM houses four Rockwell Hawaii-II (HgCdTe 2048x2048-pixel) arrays spaced by 94 per cent in the focal plane. The pixel scale measures 0.4-arcsec, although microstepping is used to generate reduced mosaics with a 0.2-arcsec pixel scale and thereby fully sample the expected seeing. (3 data files).

Photon-counting hexagonal pixel array CdTe detector: Spatial resolution characteristics for image-guided interventional applications

PubMed Central

Shrestha, Suman; Karellas, Andrew; Shi, Linxi; Gounis, Matthew J.; Bellazzini, Ronaldo; Spandre, Gloria; Brez, Alessandro; Minuti, Massimo

2016-01-01

Purpose: High-resolution, photon-counting, energy-resolved detector with fast-framing capability can facilitate simultaneous acquisition of precontrast and postcontrast images for subtraction angiography without pixel registration artifacts and can facilitate high-resolution real-time imaging during image-guided interventions. Hence, this study was conducted to determine the spatial resolution characteristics of a hexagonal pixel array photon-counting cadmium telluride (CdTe) detector. Methods: A 650 μm thick CdTe Schottky photon-counting detector capable of concurrently acquiring up to two energy-windowed images was operated in a single energy-window mode to include photons of 10 keV or higher. The detector had hexagonal pixels with apothem of 30 μm resulting in pixel pitch of 60 and 51.96 μm along the two orthogonal directions. The detector was characterized at IEC-RQA5 spectral conditions. Linear response of the detector was determined over the air kerma rate relevant to image-guided interventional procedures ranging from 1.3 nGy/frame to 91.4 μGy/frame. Presampled modulation transfer was determined using a tungsten edge test device. The edge-spread function and the finely sampled line spread function accounted for hexagonal sampling, from which the presampled modulation transfer function (MTF) was determined. Since detectors with hexagonal pixels require resampling to square pixels for distortion-free display, the optimal square pixel size was determined by minimizing the root-mean-squared-error of the aperture functions for the square and hexagonal pixels up to the Nyquist limit. Results: At Nyquist frequencies of 8.33 and 9.62 cycles/mm along the apothem and orthogonal to the apothem directions, the modulation factors were 0.397 and 0.228, respectively. For the corresponding axis, the limiting resolution defined as 10% MTF occurred at 13.3 and 12 cycles/mm, respectively. Evaluation of the aperture functions yielded an optimal square pixel size of 54 μm. After resampling to 54 μm square pixels using trilinear interpolation, the presampled MTF at Nyquist frequency of 9.26 cycles/mm was 0.29 and 0.24 along the orthogonal directions and the limiting resolution (10% MTF) occurred at approximately 12 cycles/mm. Visual analysis of a bar pattern image showed the ability to resolve close to 12 line-pairs/mm and qualitative evaluation of a neurovascular nitinol-stent showed the ability to visualize its struts at clinically relevant conditions. Conclusions: Hexagonal pixel array photon-counting CdTe detector provides high spatial resolution in single-photon counting mode. After resampling to optimal square pixel size for distortion-free display, the spatial resolution is preserved. The dual-energy capabilities of the detector could allow for artifact-free subtraction angiography and basis material decomposition. The proposed high-resolution photon-counting detector with energy-resolving capability can be of importance for several image-guided interventional procedures as well as for pediatric applications. PMID:27147324

Photon-counting hexagonal pixel array CdTe detector: Spatial resolution characteristics for image-guided interventional applications.

PubMed

Vedantham, Srinivasan; Shrestha, Suman; Karellas, Andrew; Shi, Linxi; Gounis, Matthew J; Bellazzini, Ronaldo; Spandre, Gloria; Brez, Alessandro; Minuti, Massimo

2016-05-01

High-resolution, photon-counting, energy-resolved detector with fast-framing capability can facilitate simultaneous acquisition of precontrast and postcontrast images for subtraction angiography without pixel registration artifacts and can facilitate high-resolution real-time imaging during image-guided interventions. Hence, this study was conducted to determine the spatial resolution characteristics of a hexagonal pixel array photon-counting cadmium telluride (CdTe) detector. A 650 μm thick CdTe Schottky photon-counting detector capable of concurrently acquiring up to two energy-windowed images was operated in a single energy-window mode to include photons of 10 keV or higher. The detector had hexagonal pixels with apothem of 30 μm resulting in pixel pitch of 60 and 51.96 μm along the two orthogonal directions. The detector was characterized at IEC-RQA5 spectral conditions. Linear response of the detector was determined over the air kerma rate relevant to image-guided interventional procedures ranging from 1.3 nGy/frame to 91.4 μGy/frame. Presampled modulation transfer was determined using a tungsten edge test device. The edge-spread function and the finely sampled line spread function accounted for hexagonal sampling, from which the presampled modulation transfer function (MTF) was determined. Since detectors with hexagonal pixels require resampling to square pixels for distortion-free display, the optimal square pixel size was determined by minimizing the root-mean-squared-error of the aperture functions for the square and hexagonal pixels up to the Nyquist limit. At Nyquist frequencies of 8.33 and 9.62 cycles/mm along the apothem and orthogonal to the apothem directions, the modulation factors were 0.397 and 0.228, respectively. For the corresponding axis, the limiting resolution defined as 10% MTF occurred at 13.3 and 12 cycles/mm, respectively. Evaluation of the aperture functions yielded an optimal square pixel size of 54 μm. After resampling to 54 μm square pixels using trilinear interpolation, the presampled MTF at Nyquist frequency of 9.26 cycles/mm was 0.29 and 0.24 along the orthogonal directions and the limiting resolution (10% MTF) occurred at approximately 12 cycles/mm. Visual analysis of a bar pattern image showed the ability to resolve close to 12 line-pairs/mm and qualitative evaluation of a neurovascular nitinol-stent showed the ability to visualize its struts at clinically relevant conditions. Hexagonal pixel array photon-counting CdTe detector provides high spatial resolution in single-photon counting mode. After resampling to optimal square pixel size for distortion-free display, the spatial resolution is preserved. The dual-energy capabilities of the detector could allow for artifact-free subtraction angiography and basis material decomposition. The proposed high-resolution photon-counting detector with energy-resolving capability can be of importance for several image-guided interventional procedures as well as for pediatric applications.

Demonstration of Lasercom and Spatial Tracking with a Silicon Geiger-Mode APD Array

DTIC Science & Technology

2016-02-26

standardized pixel mask as described in the previous paragraph disabling 167 of the 1024 detectors in the array , this gives an absolute maximum rate...number of elements in an array based detector .5 In this paper, we present the results of photon-counting communication tests based on an arrayed ...semiconductor photon-counting detector .6 The array also has the ability to sense the spatial distribution of the received light giving it the potential to act

Monte Carlo Techniques for Calculations of Charge Deposition and Displacement Damage from Protons in Visible and Infrared Sensor Arrays

NASA Technical Reports Server (NTRS)

Marshall, Paul; Reed, Robert; Fodness, Bryan; Jordan, Tom; Pickel, Jim; Xapsos, Michael; Burke, Ed

2004-01-01

This slide presentation examines motivation for Monte Carlo methods, charge deposition in sensor arrays, displacement damage calculations, and future work. The discussion of charge deposition sensor arrays includes Si active pixel sensor APS arrays and LWIR HgCdTe FPAs. The discussion of displacement damage calculations includes nonionizing energy loss (NIEL), HgCdTe NIEL calculation results including variance, and implications for damage in HgCdTe detector arrays.

Development of optimized detector/spectrophotometer technology for low background space astronomy missions

NASA Technical Reports Server (NTRS)

Jones, B.

1985-01-01

This program was directed towards a better understanding of some of the important factors in the performance of infrared detector arrays at low background conditions appropriate for space astronomy. The arrays were manufactured by Aerojet Electrosystems Corporation, Azusa. Two arrays, both bismuth doped silicon, were investigated: an AMCID 32x32 Engineering mosiac Si:Bi accumulation mode charge injection device detector array and a metal oxide semiconductor/field effect transistor (MOS-FET) switched array of 16x32 pixels.

An ultra-low power CMOS image sensor with on-chip energy harvesting and power management capability.

PubMed

Cevik, Ismail; Huang, Xiwei; Yu, Hao; Yan, Mei; Ay, Suat U

2015-03-06

An ultra-low power CMOS image sensor with on-chip energy harvesting and power management capability is introduced in this paper. The photodiode pixel array can not only capture images but also harvest solar energy. As such, the CMOS image sensor chip is able to switch between imaging and harvesting modes towards self-power operation. Moreover, an on-chip maximum power point tracking (MPPT)-based power management system (PMS) is designed for the dual-mode image sensor to further improve the energy efficiency. A new isolated P-well energy harvesting and imaging (EHI) pixel with very high fill factor is introduced. Several ultra-low power design techniques such as reset and select boosting techniques have been utilized to maintain a wide pixel dynamic range. The chip was designed and fabricated in a 1.8 V, 1P6M 0.18 µm CMOS process. Total power consumption of the imager is 6.53 µW for a 96 × 96 pixel array with 1 V supply and 5 fps frame rate. Up to 30 μW of power could be generated by the new EHI pixels. The PMS is capable of providing 3× the power required during imaging mode with 50% efficiency allowing energy autonomous operation with a 72.5% duty cycle.

An Ultra-Low Power CMOS Image Sensor with On-Chip Energy Harvesting and Power Management Capability

PubMed Central

Cevik, Ismail; Huang, Xiwei; Yu, Hao; Yan, Mei; Ay, Suat U.

2015-01-01

An ultra-low power CMOS image sensor with on-chip energy harvesting and power management capability is introduced in this paper. The photodiode pixel array can not only capture images but also harvest solar energy. As such, the CMOS image sensor chip is able to switch between imaging and harvesting modes towards self-power operation. Moreover, an on-chip maximum power point tracking (MPPT)-based power management system (PMS) is designed for the dual-mode image sensor to further improve the energy efficiency. A new isolated P-well energy harvesting and imaging (EHI) pixel with very high fill factor is introduced. Several ultra-low power design techniques such as reset and select boosting techniques have been utilized to maintain a wide pixel dynamic range. The chip was designed and fabricated in a 1.8 V, 1P6M 0.18 µm CMOS process. Total power consumption of the imager is 6.53 µW for a 96 × 96 pixel array with 1 V supply and 5 fps frame rate. Up to 30 μW of power could be generated by the new EHI pixels. The PMS is capable of providing 3× the power required during imaging mode with 50% efficiency allowing energy autonomous operation with a 72.5% duty cycle. PMID:25756863

Resistivity dependence on Zn concentration in semi-insulating (Cd,Zn)Te

NASA Astrophysics Data System (ADS)

Fiederle, Michael; Fauler, Alex; Babentsov, Vladimir N.; Franc, Jan; Benz, Klaus Werner

2003-01-01

The resistivity dependence on Zn concentration had been investigated in semi-insulating (Cd,Zn)Te crystals grown by the vertical Bridgman method. A coorelation between the zinc concentration and the resistivity distribution could be found. The obtained resistivity was in the interval of 2 ×109-1010 Ω cm as expected from the model of compensation. The main deep compensating levels detected by Photo Induced Current Transient Spectroscopy (PICTS) were at 0.64 +/- 0.02 eV and close the middle of the band gap at 0.80 +/- 0.02 eV.

Design and performance of single photon APD focal plane arrays for 3-D LADAR imaging

NASA Astrophysics Data System (ADS)

Itzler, Mark A.; Entwistle, Mark; Owens, Mark; Patel, Ketan; Jiang, Xudong; Slomkowski, Krystyna; Rangwala, Sabbir; Zalud, Peter F.; Senko, Tom; Tower, John; Ferraro, Joseph

2010-08-01

×We describe the design, fabrication, and performance of focal plane arrays (FPAs) for use in 3-D LADAR imaging applications requiring single photon sensitivity. These 32 × 32 FPAs provide high-efficiency single photon sensitivity for three-dimensional LADAR imaging applications at 1064 nm. Our GmAPD arrays are designed using a planarpassivated avalanche photodiode device platform with buried p-n junctions that has demonstrated excellent performance uniformity, operational stability, and long-term reliability. The core of the FPA is a chip stack formed by hybridizing the GmAPD photodiode array to a custom CMOS read-out integrated circuit (ROIC) and attaching a precision-aligned GaP microlens array (MLA) to the back-illuminated detector array. Each ROIC pixel includes an active quenching circuit governing Geiger-mode operation of the corresponding avalanche photodiode pixel as well as a pseudo-random counter to capture per-pixel time-of-flight timestamps in each frame. The FPA has been designed to operate at frame rates as high as 186 kHz for 2 μs range gates. Effective single photon detection efficiencies as high as 40% (including all optical transmission and MLA losses) are achieved for dark count rates below 20 kHz. For these planar-geometry diffused-junction GmAPDs, isolation trenches are used to reduce crosstalk due to hot carrier luminescence effects during avalanche events, and we present details of the crosstalk performance for different operating conditions. Direct measurement of temporal probability distribution functions due to cumulative timing uncertainties of the GmAPDs and ROIC circuitry has demonstrated a FWHM timing jitter as low as 265 ps (standard deviation is ~100 ps).

Recent developments in OLED-based chemical and biological sensors

NASA Astrophysics Data System (ADS)

Shinar, Joseph; Zhou, Zhaoqun; Cai, Yuankun; Shinar, Ruth

2007-09-01

Recent developments in the structurally integrated OLED-based platform of luminescent chemical and biological sensors are reviewed. In this platform, an array of OLED pixels, which is structurally integrated with the sensing elements, is used as the photoluminescence (PL) excitation source. The structural integration is achieved by fabricating the OLED array and the sensing element on opposite sides of a common glass substrate or on two glass substrates that are attached back-to-back. As it does not require optical fibers, lens, or mirrors, it results in a uniquely simple, low-cost, and potentially rugged geometry. The recent developments on this platform include the following: (1) Enhancing the performance of gas-phase and dissolved oxygen sensors. This is achieved by (a) incorporating high-dielectric TiO II nanoparticles in the oxygen-sensitive Pt and Pd octaethylporphyrin (PtOEP and PdOEP, respectively)- doped polystyrene (PS) sensor films, and (b) embedding the oxygen-sensitive dyes in a matrix of polymer blends such as PS:polydimethylsiloxane (PDMS). (2) Developing sensor arrays for simultaneous detection of multiple serum analytes, including oxygen, glucose, lactate, and alcohol. The sensing element for each analyte consists of a PtOEP-doped PS oxygen sensor, and a solution containing the oxidase enzyme specific to the analyte. Each sensing element is coupled to two individually addressable OLED pixels and a Si photodiode photodetector (PD). (3) Enhancing the integration of the platform, whereby a PD array is also structurally integrated with the OLED array and sensing elements. This enhanced integration is achieved by fabricating an array of amorphous or nanocrystalline Si-based PDs, followed by fabrication of the OLED pixels in the gaps between these Si PDs.

Testing of focal plane arrays at the AEDC

NASA Astrophysics Data System (ADS)

Nicholson, Randy A.; Mead, Kimberly D.; Smith, Robert W.

1992-07-01

A facility was developed at the Arnold Engineering Development Center (AEDC) to provide complete radiometric characterization of focal plane arrays (FPAs). The highly versatile facility provides the capability to test single detectors, detector arrays, and hybrid FPAs. The primary component of the AEDC test facility is the Focal Plane Characterization Chamber (FPCC). The FPCC provides a cryogenic, low-background environment for the test focal plane. Focal plane testing in the FPCC includes flood source testing, during which the array is uniformly irradiated with IR radiation, and spot source testing, during which the target radiation is focused onto a single pixel or group of pixels. During flood source testing, performance parameters such as power consumption, responsivity, noise equivalent input, dynamic range, radiometric stability, recovery time, and array uniformity can be assessed. Crosstalk is evaluated during spot source testing. Spectral response testing is performed in a spectral response test station using a three-grating monochromator. Because the chamber can accommodate several types of testing in a single test installation, a high throughput rate and good economy of operation are possible.

A 65k pixel, 150k frames-per-second camera with global gating and micro-lenses suitable for fluorescence lifetime imaging

NASA Astrophysics Data System (ADS)

Burri, Samuel; Powolny, François; Bruschini, Claudio E.; Michalet, Xavier; Regazzoni, Francesco; Charbon, Edoardo

2014-05-01

This paper presents our work on a 65k pixel single-photon avalanche diode (SPAD) based imaging sensor realized in a 0.35μm standard CMOS process. At a resolution of 512 by 128 pixels the sensor is read out in 6.4μs to deliver over 150k monochrome frames per second. The individual pixel has a size of 24μm2 and contains the SPAD with a 12T quenching and gating circuitry along with a memory element. The gating signals are distributed across the chip through a balanced tree to minimize the signal skew between the pixels. The array of pixels is row-addressable and data is sent out of the chip on 128 lines in parallel at a frequency of 80MHz. The system is controlled by an FPGA which generates the gating and readout signals and can be used for arbitrary real-time computation on the frames from the sensor. The communication protocol between the camera and a conventional PC is USB2. The active area of the chip is 5% and can be significantly improved with the application of a micro-lens array. A micro-lens array, for use with collimated light, has been designed and its performance is reviewed in the paper. Among other high-speed phenomena the gating circuitry capable of generating illumination periods shorter than 5ns can be used for Fluorescence Lifetime Imaging (FLIM). In order to measure the lifetime of fluorophores excited by a picosecond laser, the sensor's illumination period is synchronized with the excitation laser pulses. A histogram of the photon arrival times relative to the excitation is then constructed by counting the photons arriving during the sensitive time for several positions of the illumination window. The histogram for each pixel is transferred afterwards to a computer where software routines extract the lifetime at each location with an accuracy better than 100ps. We show results for fluorescence lifetime measurements using different fluorophores with lifetimes ranging from 150ps to 5ns.

Initial steps toward the realization of large area arrays of single photon counting pixels based on polycrystalline silicon TFTs

NASA Astrophysics Data System (ADS)

Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Jiang, Hao; Street, Robert A.; Lu, Jeng Ping

2014-03-01

The thin-film semiconductor processing methods that enabled creation of inexpensive liquid crystal displays based on amorphous silicon transistors for cell phones and televisions, as well as desktop, laptop and mobile computers, also facilitated the development of devices that have become ubiquitous in medical x-ray imaging environments. These devices, called active matrix flat-panel imagers (AMFPIs), measure the integrated signal generated by incident X rays and offer detection areas as large as ~43×43 cm2. In recent years, there has been growing interest in medical x-ray imagers that record information from X ray photons on an individual basis. However, such photon counting devices have generally been based on crystalline silicon, a material not inherently suited to the cost-effective manufacture of monolithic devices of a size comparable to that of AMFPIs. Motivated by these considerations, we have developed an initial set of small area prototype arrays using thin-film processing methods and polycrystalline silicon transistors. These prototypes were developed in the spirit of exploring the possibility of creating large area arrays offering single photon counting capabilities and, to our knowledge, are the first photon counting arrays fabricated using thin film techniques. In this paper, the architecture of the prototype pixels is presented and considerations that influenced the design of the pixel circuits, including amplifier noise, TFT performance variations, and minimum feature size, are discussed.

Pixel Stability in the Hubble Space Telescope WFC3/UVIS Detector

NASA Astrophysics Data System (ADS)

Bourque, Matthew; Baggett, Sylvia M.; Borncamp, David; Desjardins, Tyler D.; Grogin, Norman A.; Wide Field Camera 3 Team

2018-06-01

The Hubble Space Telescope (HST) Wide Field Camera 3 (WFC3) Ultraviolet-Visible (UVIS) detector has acquired roughly 12,000 dark images since the installation of WFC3 in 2009, as part of a daily monitoring program to measure the instrinsic dark current of the detector. These images have been reconfigured into 'pixel history' images in which detector columns are extracted from each dark and placed into a new time-ordered array, allowing for efficient analysis of a given pixel's behavior over time. We discuss how we measure each pixel's stability, as well as plans for a new Data Quality (DQ) flag to be introduced in a future release of the WFC3 calibration pipeline (CALWF3) for flagging pixels that are deemed unstable.

Chromatic Modulator for High Resolution CCD or APS Devices

NASA Technical Reports Server (NTRS)

Hartley, Frank T. (Inventor); Hull, Anthony B. (Inventor)

2003-01-01

A system for providing high-resolution color separation in electronic imaging. Comb drives controllably oscillate a red-green-blue (RGB) color strip filter system (or otherwise) over an electronic imaging system such as a charge-coupled device (CCD) or active pixel sensor (APS). The color filter is modulated over the imaging array at a rate three or more times the frame rate of the imaging array. In so doing, the underlying active imaging elements are then able to detect separate color-separated images, which are then combined to provide a color-accurate frame which is then recorded as the representation of the recorded image. High pixel resolution is maintained. Registration is obtained between the color strip filter and the underlying imaging array through the use of electrostatic comb drives in conjunction with a spring suspension system.

High-Performance LWIR Superlattice Detectors and FPA Based on CBIRD Design

NASA Technical Reports Server (NTRS)

Soibel, Alexander; Nguyen, Jean; Rafol, Sir B.; Liao, Anna; Hoeglund, Linda; Khoshakhlagh, Arezou; Keo, Sam A.; Mumolo, Jason M.; Liu, John; Ting, David Z.-Y.;

High-Performance LWIR Superlattice Detectors and FPA Based on CBIRD Design

NASA Technical Reports Server (NTRS)

Soibel, Alexander; Nguyen, Jean; Rafol, Sir B.; Liao, Anna; Hoeglund, Linda; Khoshakhlagh, Arezou; Keo, Sam A.; Mumolo, Jason M.; Liu, John; Ting, David Z.-Y.;

Method for maskless lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

NONE

The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of thesemore » individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides.« less

Maskless lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sweatt, W.C.; Stulen, R.H.

The present invention provides a method for maskless lithography. A plurality of individually addressable and rotatable micromirrors together comprise a two-dimensional array of micromirrors. Each micromirror in the two-dimensional array can be envisioned as an individually addressable element in the picture that comprises the circuit pattern desired. As each micromirror is addressed it rotates so as to reflect light from a light source onto a portion of the photoresist coated wafer thereby forming a pixel within the circuit pattern. By electronically addressing a two-dimensional array of these micromirrors in the proper sequence a circuit pattern that is comprised of thesemore » individual pixels can be constructed on a microchip. The reflecting surface of the micromirror is configured in such a way as to overcome coherence and diffraction effects in order to produce circuit elements having straight sides. 12 figs.« less

High-resolution pulse-counting array detectors for imaging and spectroscopy at ultraviolet wavelengths

NASA Technical Reports Server (NTRS)

Timothy, J. Gethyn; Bybee, Richard L.

1986-01-01

The performance characteristics of multianode microchannel array (MAMA) detector systems which have formats as large as 256 x 1024 pixels and which have application to imaging and spectroscopy at UV wavelengths are evaluated. Sealed and open-structure MAMA detector tubes with opaque CsI photocathodes can determine the arrival time of the detected photon to an accuracy of 100 ns or better. Very large format MAMA detectors with CsI and Cs2Te photocathodes and active areas of 52 x 52 mm (2048 x 2048 pixels) will be used as the UV solar blind detectors for the NASA STIS.

Assesment on the performance of electrode arrays using image processing technique

NASA Astrophysics Data System (ADS)

Usman, N.; Khiruddin, A.; Nawawi, Mohd

2017-08-01

Interpreting inverted resistivity section is time consuming, tedious and requires other sources of information to be relevant geologically. Image processing technique was used in order to perform post inversion processing which make geophysical data interpretation easier. The inverted data sets were imported into the PCI Geomatica 9.0.1 for further processing. The data sets were clipped and merged together in order to match the coordinates of the three layers and permit pixel to pixel analysis. Dipole-dipole array is more sensitive to resistivity variation with depth in comparison with Werner-Schlumberger and pole-dipole. Image processing serves as good post-inversion tool in geophysical data processing.

In situ two-dimensional imaging quick-scanning XAFS with pixel array detector.

PubMed

Tanida, Hajime; Yamashige, Hisao; Orikasa, Yuki; Oishi, Masatsugu; Takanashi, Yu; Fujimoto, Takahiro; Sato, Kenji; Takamatsu, Daiko; Murayama, Haruno; Arai, Hajime; Matsubara, Eiichiro; Uchimoto, Yoshiharu; Ogumi, Zempachi

2011-11-01

Quick-scanning X-ray absorption fine structure (XAFS) measurements were performed in transmission mode using a PILATUS 100K pixel array detector (PAD). The method can display a two-dimensional image for a large area of the order of a centimetre with a spatial resolution of 0.2 mm at each energy point in the XAFS spectrum. The time resolution of the quick-scanning method ranged from 10 s to 1 min per spectrum depending on the energy range. The PAD has a wide dynamic range and low noise, so the obtained spectra have a good signal-to-noise ratio.

Spectroscopic optical coherence tomography based on wavelength de-multiplexing and smart pixel array detection

NASA Astrophysics Data System (ADS)

Laubscher, Markus; Bourquin, Stéphane; Froehly, Luc; Karamata, Boris; Lasser, Theo

2004-07-01

Current spectroscopic optical coherence tomography (OCT) methods rely on a posteriori numerical calculation. We present an experimental alternative for accessing spectroscopic information in OCT without post-processing based on wavelength de-multiplexing and parallel detection using a diffraction grating and a smart pixel detector array. Both a conventional A-scan with high axial resolution and the spectrally resolved measurement are acquired simultaneously. A proof-of-principle demonstration is given on a dynamically changing absorbing sample. The method's potential for fast spectroscopic OCT imaging is discussed. The spectral measurements obtained with this approach are insensitive to scan non-linearities or sample movements.

2D Array of Far-infrared Thermal Detectors: Noise Measurements and Processing Issues

NASA Technical Reports Server (NTRS)

Lakew, B.; Aslam, S.; Stevenson, T.

2008-01-01

A magnesium diboride (MgB2) detector 2D array for use in future space-based spectrometers is being developed at GSFC. Expected pixel sensitivities and comparison to current state-of-the-art infrared (IR) detectors will be discussed.

Active pixel sensor array with multiresolution readout

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Kemeny, Sabrina E. (Inventor); Pain, Bedabrata (Inventor)

1999-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. The imaging device can also include an electronic shutter formed on the substrate adjacent the photogate, and/or a storage section to allow for simultaneous integration. In addition, the imaging device can include a multiresolution imaging circuit to provide images of varying resolution. The multiresolution circuit could also be employed in an array where the photosensitive portion of each pixel cell is a photodiode. This latter embodiment could further be modified to facilitate low light imaging.

Processing and characterization of high resolution GaN/InGaN LED arrays at 10 micron pitch for micro display applications

NASA Astrophysics Data System (ADS)

Dupré, Ludovic; Marra, Marjorie; Verney, Valentin; Aventurier, Bernard; Henry, Franck; Olivier, François; Tirano, Sauveur; Daami, Anis; Templier, François

2017-02-01

We report the fabrication process and characterization of high resolution 873 x 500 pixels emissive arrays based on blue or green GaN/InGaN light emitting diodes (LEDs) at a reduced pixel pitch of 10 μm. A self-aligned process along with a combination of damascene metallization steps is presented as the key to create a common cathode which is expected to provide good thermal dissipation and prevent voltage drops between center and side of the micro LED matrix. We will discuss the challenges of a self-aligned technology related to the choice of a good P contact metal and will present our solutions for the realization of the metallic interconnections between the GaN contacts and the higher levels of metallization at such a small pixel pitch. Enhanced control of each technological step allows scalability of the process up to 4 inch LED wafers and production of high quality LED arrays. The very high brightness (up to 107 cd.m-2) and good external quantum efficiency (EQE) of the resulting device make these kind of micro displays suitable for augmented reality or head up display applications.

X-ray tests of a microchannel plate detector and amorphous silicon pixel array readout for neutron radiography

NASA Astrophysics Data System (ADS)

Ambrosi, R. M.; Street, R.; Feller, B.; Fraser, G. W.; Watterson, J. I. W.; Lanza, R. C.; Dowson, J.; Ross, D.; Martindale, A.; Abbey, A. F.; Vernon, D.

2007-03-01

High-performance large area imaging detectors for fast neutrons in the 5-14 MeV energy range do not exist at present. The aim of this project is to combine microchannel plates or MCPs (or similar electron multiplication structures) traditionally used in image intensifiers and X-ray detectors with amorphous silicon (a-Si) pixel arrays to produce a composite converter and intensifier position sensitive imaging system. This detector will provide an order of magnitude improvement in image resolution when compared with current millimetre resolution limits obtained using phosphor or scintillator-based hydrogen rich converters. In this study we present the results of the initial experimental evaluation of the prototype system. This study was carried out using a medical X-ray source for the proof of concept tests, the next phase will involve neutron imaging tests. The hybrid detector described in this study is a unique development and paves the way for large area position sensitive detectors consisting of MCP or microsphere plate detectors and a-Si or polysilicon pixel arrays. Applications include neutron and X-ray imaging for terrestrial applications. The technology could be extended to space instrumentation for X-ray astronomy.

Research on Geometric Calibration of Spaceborne Linear Array Whiskbroom Camera

PubMed Central

Sheng, Qinghong; Wang, Qi; Xiao, Hui; Wang, Qing

2018-01-01

The geometric calibration of a spaceborne thermal-infrared camera with a high spatial resolution and wide coverage can set benchmarks for providing an accurate geographical coordinate for the retrieval of land surface temperature. The practice of using linear array whiskbroom Charge-Coupled Device (CCD) arrays to image the Earth can help get thermal-infrared images of a large breadth with high spatial resolutions. Focusing on the whiskbroom characteristics of equal time intervals and unequal angles, the present study proposes a spaceborne linear-array-scanning imaging geometric model, whilst calibrating temporal system parameters and whiskbroom angle parameters. With the help of the YG-14—China’s first satellite equipped with thermal-infrared cameras of high spatial resolution—China’s Anyang Imaging and Taiyuan Imaging are used to conduct an experiment of geometric calibration and a verification test, respectively. Results have shown that the plane positioning accuracy without ground control points (GCPs) is better than 30 pixels and the plane positioning accuracy with GCPs is better than 1 pixel. PMID:29337885

Implementation of total focusing method for phased array ultrasonic imaging on FPGA

NASA Astrophysics Data System (ADS)

Guo, JianQiang; Li, Xi; Gao, Xiaorong; Wang, Zeyong; Zhao, Quanke

2015-02-01

This paper describes a multi-FPGA imaging system dedicated for the real-time imaging using the Total Focusing Method (TFM) and Full Matrix Capture (FMC). The system was entirely described using Verilog HDL language and implemented on Altera Stratix IV GX FPGA development board. The whole algorithm process is to: establish a coordinate system of image and divide it into grids; calculate the complete acoustic distance of array element between transmitting array element and receiving array element, and transform it into index value; then index the sound pressure values from ROM and superimpose sound pressure values to get pixel value of one focus point; and calculate the pixel values of all focus points to get the final imaging. The imaging result shows that this algorithm has high SNR of defect imaging. And FPGA with parallel processing capability can provide high speed performance, so this system can provide the imaging interface, with complete function and good performance.

Polarization sensitive Multi-Chroic MKIDs

NASA Astrophysics Data System (ADS)

Johnson, Bradley R.; Flanigan, Daniel; Abitbol, Maximilian H.; Ade, Peter A. R.; Bryan, Sean; Cho, Hsiao-Mei; Datta, Rahul; Day, Peter; Doyle, Simon; Irwin, Kent; Jones, Glenn; Kernasovskiy, Sarah; Li, Dale; Mauskopf, Philip; McCarrick, Heather; McMahon, Jeff; Miller, Amber; Pisano, Giampaolo; Song, Yanru; Surdi, Harshad; Tucker, Carole

2016-07-01

We report on the development of scalable prototype microwave kinetic inductance detector (MKID) arrays tai- lored for future multi-kilo-pixel experiments that are designed to simultaneously characterize the polarization properties of both the cosmic microwave background (CMB) and Galactic dust emission. These modular arrays are composed of horn-coupled, polarization-sensitive MKIDs, and each pixel has four detectors: two polariza- tions in two spectral bands between 125 and 280 GHz. A horn is used to feed each array element, and a planar orthomode transducer, composed of two waveguide probe pairs, separates the incoming light into two linear po- larizations. Diplexers composed of resonant-stub band-pass filters separate the radiation into 125 to 170 GHz and 190 to 280 GHz pass bands. The millimeter-wave power is ultimately coupled to a hybrid co-planar waveguide microwave kinetic inductance detector using a novel, broadband circuit developed by our collaboration. Elec- tromagnetic simulations show the expected absorption efficiency of the detector is approximately 90%. Array fabrication will begin in the summer of 2016.

Imaging spectroscopy using embedded diffractive optical arrays

NASA Astrophysics Data System (ADS)

Hinnrichs, Michele; Hinnrichs, Bradford

2017-09-01

Pacific Advanced Technology (PAT) has developed an infrared hyperspectral camera based on diffractive optic arrays. This approach to hyperspectral imaging has been demonstrated in all three infrared bands SWIR, MWIR and LWIR. The hyperspectral optical system has been integrated into the cold-shield of the sensor enabling the small size and weight of this infrared hyperspectral sensor. This new and innovative approach to an infrared hyperspectral imaging spectrometer uses micro-optics that are made up of an area array of diffractive optical elements where each element is tuned to image a different spectral region on a common focal plane array. The lenslet array is embedded in the cold-shield of the sensor and actuated with a miniature piezo-electric motor. This approach enables rapid infrared spectral imaging with multiple spectral images collected and processed simultaneously each frame of the camera. This paper will present our optical mechanical design approach which results in an infrared hyper-spectral imaging system that is small enough for a payload on a small satellite, mini-UAV, commercial quadcopter or man portable. Also, an application of how this spectral imaging technology can easily be used to quantify the mass and volume flow rates of hydrocarbon gases. The diffractive optical elements used in the lenslet array are blazed gratings where each lenslet is tuned for a different spectral bandpass. The lenslets are configured in an area array placed a few millimeters above the focal plane and embedded in the cold-shield to reduce the background signal normally associated with the optics. The detector array is divided into sub-images covered by each lenslet. We have developed various systems using a different number of lenslets in the area array. Depending on the size of the focal plane and the diameter of the lenslet array will determine the number of simultaneous different spectral images collected each frame of the camera. A 2 x 2 lenslet array will image four different spectral images of the scene each frame and when coupled with a 512 x 512 focal plane array will give spatial resolution of 256 x 256 pixel each spectral image. Another system that we developed uses a 4 x 4 lenslet array on a 1024 x 1024 pixel element focal plane array which gives 16 spectral images of 256 x 256 pixel resolution each frame. This system spans the SWIR and MWIR bands with a single optical array and focal plane array.

High resolution phoswich gamma-ray imager utilizing monolithic MPPC arrays with submillimeter pixelized crystals

NASA Astrophysics Data System (ADS)

Kato, T.; Kataoka, J.; Nakamori, T.; Kishimoto, A.; Yamamoto, S.; Sato, K.; Ishikawa, Y.; Yamamura, K.; Kawabata, N.; Ikeda, H.; Kamada, K.

2013-05-01

We report the development of a high spatial resolution tweezers-type coincidence gamma-ray camera for medical imaging. This application consists of large-area monolithic Multi-Pixel Photon Counters (MPPCs) and submillimeter pixelized scintillator matrices. The MPPC array has 4 × 4 channels with a three-side buttable, very compact package. For typical operational gain of 7.5 × 105 at + 20 °C, gain fluctuation over the entire MPPC device is only ± 5.6%, and dark count rates (as measured at the 1 p.e. level) amount to <= 400 kcps per channel. We selected Ce-doped (Lu,Y)2(SiO4)O (Ce:LYSO) and a brand-new scintillator, Ce-doped Gd3Al2Ga3O12 (Ce:GAGG) due to their high light yield and density. To improve the spatial resolution, these scintillators were fabricated into 15 × 15 matrices of 0.5 × 0.5 mm2 pixels. The Ce:LYSO and Ce:GAGG scintillator matrices were assembled into phosphor sandwich (phoswich) detectors, and then coupled to the MPPC array along with an acrylic light guide measuring 1 mm thick, and with summing operational amplifiers that compile the signals into four position-encoded analog outputs being used for signal readout. Spatial resolution of 1.1 mm was achieved with the coincidence imaging system using a 22Na point source. These results suggest that the gamma-ray imagers offer excellent potential for applications in high spatial medical imaging.

Maximum likelihood positioning and energy correction for scintillation detectors

NASA Astrophysics Data System (ADS)

Lerche, Christoph W.; Salomon, André; Goldschmidt, Benjamin; Lodomez, Sarah; Weissler, Björn; Solf, Torsten

2016-02-01

An algorithm for determining the crystal pixel and the gamma ray energy with scintillation detectors for PET is presented. The algorithm uses Likelihood Maximisation (ML) and therefore is inherently robust to missing data caused by defect or paralysed photo detector pixels. We tested the algorithm on a highly integrated MRI compatible small animal PET insert. The scintillation detector blocks of the PET gantry were built with the newly developed digital Silicon Photomultiplier (SiPM) technology from Philips Digital Photon Counting and LYSO pixel arrays with a pitch of 1 mm and length of 12 mm. Light sharing was used to readout the scintillation light from the 30× 30 scintillator pixel array with an 8× 8 SiPM array. For the performance evaluation of the proposed algorithm, we measured the scanner’s spatial resolution, energy resolution, singles and prompt count rate performance, and image noise. These values were compared to corresponding values obtained with Center of Gravity (CoG) based positioning methods for different scintillation light trigger thresholds and also for different energy windows. While all positioning algorithms showed similar spatial resolution, a clear advantage for the ML method was observed when comparing the PET scanner’s overall single and prompt detection efficiency, image noise, and energy resolution to the CoG based methods. Further, ML positioning reduces the dependence of image quality on scanner configuration parameters and was the only method that allowed achieving highest energy resolution, count rate performance and spatial resolution at the same time.

MCT-Based LWIR and VLWIR 2D Focal Plane Detector Arrays for Low Dark Current Applications at AIM

NASA Astrophysics Data System (ADS)

Hanna, S.; Eich, D.; Mahlein, K.-M.; Fick, W.; Schirmacher, W.; Thöt, R.; Wendler, J.; Figgemeier, H.

2016-09-01

We present our latest results on n-on- p as well as on p-on- n low dark current planar mercury cadmium telluride (MCT) photodiode technology long wavelength infrared (LWIR) and very long wavelength infrared (VLWIR) two-dimensional focal plane arrays (FPAs) with quantum efficiency (QE) cut-off wavelength >11 μm at 80 K and a 512 × 640 pixel format FPA at 20 μm pitch stitched from two 512 × 320 pixel photodiode arrays. Significantly reduced dark currents as compared with Tennant's "Rule 07" are demonstrated in both polarities while retaining good detection efficiency ≥60% for operating temperatures between 30 K and 100 K. This allows for the same dark current performance at 20 K higher operating temperature than with previous AIM INFRAROT-MODULE GmbH (AIM) technology. For p-on- n LWIR MCT FPAs, broadband photoresponse nonuniformity of only about 1.2% is achieved at 55 K with low defective pixel numbers. For an n-on- p VLWIR MCT FPA with 13.6 μm cut-off at 55 K, excellent photoresponse nonuniformity of about 3.1% is achieved at moderate defective pixel numbers. This advancement in detector technology paves the way for outstanding signal-to-noise ratio performance infrared detection, enabling cutting-edge next-generation LWIR/VLWIR detectors for space instruments and devices with higher operating temperature and low size, weight, and power for field applications.

Circuit design for the retina-like image sensor based on space-variant lens array

NASA Astrophysics Data System (ADS)

Gao, Hongxun; Hao, Qun; Jin, Xuefeng; Cao, Jie; Liu, Yue; Song, Yong; Fan, Fan

2013-12-01

Retina-like image sensor is based on the non-uniformity of the human eyes and the log-polar coordinate theory. It has advantages of high-quality data compression and redundant information elimination. However, retina-like image sensors based on the CMOS craft have drawbacks such as high cost, low sensitivity and signal outputting efficiency and updating inconvenience. Therefore, this paper proposes a retina-like image sensor based on space-variant lens array, focusing on the circuit design to provide circuit support to the whole system. The circuit includes the following parts: (1) A photo-detector array with a lens array to convert optical signals to electrical signals; (2) a strobe circuit for time-gating of the pixels and parallel paths for high-speed transmission of the data; (3) a high-precision digital potentiometer for the I-V conversion, ratio normalization and sensitivity adjustment, a programmable gain amplifier for automatic generation control(AGC), and a A/D converter for the A/D conversion in every path; (4) the digital data is displayed on LCD and stored temporarily in DDR2 SDRAM; (5) a USB port to transfer the data to PC; (6) the whole system is controlled by FPGA. This circuit has advantages as lower cost, larger pixels, updating convenience and higher signal outputting efficiency. Experiments have proved that the grayscale output of every pixel basically matches the target and a non-uniform image of the target is ideally achieved in real time. The circuit can provide adequate technical support to retina-like image sensors based on space-variant lens array.

Detection of pointing errors with CMOS-based camera in intersatellite optical communications

NASA Astrophysics Data System (ADS)

Yu, Si-yuan; Ma, Jing; Tan, Li-ying

2005-01-01

For very high data rates, intersatellite optical communications hold a potential performance edge over microwave communications. Acquisition and Tracking problem is critical because of the narrow transmit beam. A single array detector in some systems performs both spatial acquisition and tracking functions to detect pointing errors, so both wide field of view and high update rate is required. The past systems tend to employ CCD-based camera with complex readout arrangements, but the additional complexity reduces the applicability of the array based tracking concept. With the development of CMOS array, CMOS-based cameras can employ the single array detector concept. The area of interest feature of the CMOS-based camera allows a PAT system to specify portion of the array. The maximum allowed frame rate increases as the size of the area of interest decreases under certain conditions. A commercially available CMOS camera with 105 fps @ 640×480 is employed in our PAT simulation system, in which only part pixels are used in fact. Beams angle varying in the field of view can be detected after getting across a Cassegrain telescope and an optical focus system. Spot pixel values (8 bits per pixel) reading out from CMOS are transmitted to a DSP subsystem via IEEE 1394 bus, and pointing errors can be computed by the centroid equation. It was shown in test that: (1) 500 fps @ 100×100 is available in acquisition when the field of view is 1mrad; (2)3k fps @ 10×10 is available in tracking when the field of view is 0.1mrad.

Small-angle solution scattering using the mixed-mode pixel array detector

PubMed Central

Koerner, Lucas J.; Gillilan, Richard E.; Green, Katherine S.; Wang, Suntao; Gruner, Sol M.

2011-01-01

Solution small-angle X-ray scattering (SAXS) measurements were obtained using a 128 × 128 pixel X-ray mixed-mode pixel array detector (MMPAD) with an 860 µs readout time. The MMPAD offers advantages for SAXS experiments: a pixel full-well of >2 × 107 10 keV X-rays, a maximum flux rate of 108 X-rays pixel−1 s−1, and a sub-pixel point-spread function. Data from the MMPAD were quantitatively compared with data from a charge-coupled device (CCD) fiber-optically coupled to a phosphor screen. MMPAD solution SAXS data from lysozyme solutions were of equal or better quality than data captured by the CCD. The read-noise (normalized by pixel area) of the MMPAD was less than that of the CCD by an average factor of 3.0. Short sample-to-detector distances were required owing to the small MMPAD area (19.2 mm × 19.2 mm), and were revealed to be advantageous with respect to detector read-noise. As predicted by the Shannon sampling theory and confirmed by the acquisition of lysozyme solution SAXS curves, the MMPAD at short distances is capable of sufficiently sampling a solution SAXS curve for protein shape analysis. The readout speed of the MMPAD was demonstrated by continuously monitoring lysozyme sample evolution as radiation damage accumulated. These experiments prove that a small suitably configured MMPAD is appropriate for time-resolved solution scattering measurements. PMID:21335900

Ultra-Low Dark Current HgCdTe Detector in SWIR for Space Applications

NASA Astrophysics Data System (ADS)

Cervera, C.; Boulade, O.; Gravrand, O.; Lobre, C.; Guellec, F.; Sanson, E.; Ballet, P.; Santailler, J. L.; Moreau, V.; Zanatta, J. P.; Fieque, B.; Castelein, P.

2017-10-01

This paper presents recent developments at Commissariat à l'Energie atomique, Laboratoire d'Electronique et de Technologie de l'Information infrared laboratory on processing and characterization of p-on- n HgCdTe (MCT) planar infrared focal plane arrays (FPAs) in short-wave infrared (SWIR) spectral band for the astrophysics applications. These FPAs have been grown using both liquid phase epitaxy and molecular beam epitaxy on a lattice-matched CdZnTe substrate. This technology exhibits lower dark current and lower series resistance in comparison with n-on- p vacancy-doped architecture and is well adapted for low flux detection or high operating temperature. This architecture has been evaluated for space applications in long-wave infrared and very-long-wave infrared spectral bands with cut-off wavelengths from 10 μm up to 17 μm at 78 K and is now evaluated for the SWIR range. The metallurgical nature of the absorbing layer is also examined and both molecular beam epitaxy and liquid phase epitaxy have been investigated. Electro-optical characterizations have been performed on individual photodiodes from test arrays, whereas dark current investigation has been performed with a fully functional readout integrated circuit dedicated to low flux operations.

Performance of Backshort-Under-Grid Kilopixel TES Arrays for HAWC+

NASA Technical Reports Server (NTRS)

Staguhn, J. G.; Benford, D. J.; Dowell, C. D.; Fixsen, D. J.; Hilton, G. C.; Irwin, K. D.; Jhabvala, C. A.; Maher, S. F.; Miller, T. M.; Moseley, S. H.;

Analysis of Deep and Shallow Traps in Semi-Insulating CdZnTe

DOE PAGES

Kim, Kihyun; Yoon, Yongsu; James, Ralph B.

2018-03-13

Trap levels which are deep or shallow play an important role in the electrical and the optical properties of a semiconductor; thus, a trap level analysis is very important in most semiconductor devices. Deep-level defects in CdZnTe are essential in Fermi level pinning at the middle of the bandgap and are responsible for incomplete charge collection and polarization effects. However, a deep level analysis in semi-insulating CdZnTe (CZT) is very difficult. Theoretical capacitance calculation for a metal/insulator/CZT (MIS) device with deep-level defects exhibits inflection points when the donor/acceptor level crosses the Fermi level in the surface-charge layer (SCL). Three CZTmore » samples with different resistivities, 2 × 10 4 (n-type), 2 × 10 6 (p-type), and 2 × 10 10 (p-type) Ω·cm, were used in fabricating the MIS devices. These devices showed several peaks in their capacitance measurements due to upward/downward band bending that depend on the surface potential. In conclusion, theoretical and experimental capacitance measurements were in agreement, except in the fully compensated case.« less

Noise in CdZnTe detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luke, P. N.; Amman, M.; Lee J. S.

2000-10-10

Noise in CdZnTe devices with different electrode configurations was investigated. Measurements on devices with guard-ring electrode structures showed that surface leakage current does not produce any significant noise. The parallel white noise component of the devices appeared to be generated by the bulk current alone, even though the surface current was substantially higher. This implies that reducing the surface leakage current of a CdZnTe detector may not necessarily result in a significant improvement in noise performance. The noise generated by the bulk current is also observed to be below full shot noise. This partial suppression of shot noise may bemore » the result of Coulomb interaction between carriers or carrier trapping. Devices with coplanar strip electrodes were observed to produce a 1/f noise term at the preamplifier output. Higher levels of this 1/f noise were observed with decreasing gap widths between electrodes. The level of this 1/f noise appeared to be independent of bias voltage and leakage current but was substantially reduced after certain surface treatments.« less

Analysis of Deep and Shallow Traps in Semi-Insulating CdZnTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Kihyun; Yoon, Yongsu; James, Ralph B.

Trap levels which are deep or shallow play an important role in the electrical and the optical properties of a semiconductor; thus, a trap level analysis is very important in most semiconductor devices. Deep-level defects in CdZnTe are essential in Fermi level pinning at the middle of the bandgap and are responsible for incomplete charge collection and polarization effects. However, a deep level analysis in semi-insulating CdZnTe (CZT) is very difficult. Theoretical capacitance calculation for a metal/insulator/CZT (MIS) device with deep-level defects exhibits inflection points when the donor/acceptor level crosses the Fermi level in the surface-charge layer (SCL). Three CZTmore » samples with different resistivities, 2 × 10 4 (n-type), 2 × 10 6 (p-type), and 2 × 10 10 (p-type) Ω·cm, were used in fabricating the MIS devices. These devices showed several peaks in their capacitance measurements due to upward/downward band bending that depend on the surface potential. In conclusion, theoretical and experimental capacitance measurements were in agreement, except in the fully compensated case.« less

Detector Sampling of Optical/IR Spectra: How Many Pixels per FWHM?

NASA Astrophysics Data System (ADS)

Robertson, J. Gordon

2017-08-01

Most optical and IR spectra are now acquired using detectors with finite-width pixels in a square array. Each pixel records the received intensity integrated over its own area, and pixels are separated by the array pitch. This paper examines the effects of such pixellation, using computed simulations to illustrate the effects which most concern the astronomer end-user. It is shown that coarse sampling increases the random noise errors in wavelength by typically 10-20 % at 2 pixels per Full Width at Half Maximum, but with wide variation depending on the functional form of the instrumental Line Spread Function (i.e. the instrumental response to a monochromatic input) and on the pixel phase. If line widths are determined, they are even more strongly affected at low sampling frequencies. However, the noise in fitted peak amplitudes is minimally affected by pixellation, with increases less than about 5%. Pixellation has a substantial but complex effect on the ability to see a relative minimum between two closely spaced peaks (or relative maximum between two absorption lines). The consistent scale of resolving power presented by Robertson to overcome the inadequacy of the Full Width at Half Maximum as a resolution measure is here extended to cover pixellated spectra. The systematic bias errors in wavelength introduced by pixellation, independent of signal/noise ratio, are examined. While they may be negligible for smooth well-sampled symmetric Line Spread Functions, they are very sensitive to asymmetry and high spatial frequency sub-structure. The Modulation Transfer Function for sampled data is shown to give a useful indication of the extent of improperly sampled signal in an Line Spread Function. The common maxim that 2 pixels per Full Width at Half Maximum is the Nyquist limit is incorrect and most Line Spread Functions will exhibit some aliasing at this sample frequency. While 2 pixels per Full Width at Half Maximum is nevertheless often an acceptable minimum for moderate signal/noise work, it is preferable to carry out simulations for any actual or proposed Line Spread Function to find the effects of various sampling frequencies. Where spectrograph end-users have a choice of sampling frequencies, through on-chip binning and/or spectrograph configurations, it is desirable that the instrument user manual should include an examination of the effects of the various choices.

A 2-D Array of Superconducting Magnesium Diboride (MgB2) Far-IR Thermal Detectors for Planetary Exploration

NASA Technical Reports Server (NTRS)

Lakew, Brook

2009-01-01

A 2-D array of superconducting Magnesium Diboride(MgB2) far IR thermal detectors has been fabricated. Such an array is intended to be at the focal plane of future generation thermal imaging far-IR instruments that will investigate the outer planets and their icy moons. Fabrication and processing of the pixels of the array as well as noise characterization of architectured MgB2 thin films will be presented. Challenges and solutions for improving the performance of the array will be discussed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lemley, James; Furey, Michael

The BNL Microelectronics group has designed a series of custom ASICs in CMOS technol­ogy for use with Cadmium-Zink-Telluride (CdZnTe) radiation detectors, primarily in the field of nuclear spectroscopy. An increased demand for CdZnTe based detection systems that can operate in high flux X-ray inspection equipment makes it necessary to develop a new type of signal processing ASIC, one which can achieve moderate energy resolution at very high count rate. This work covers the development of a high-rate, low power ASIC that classifies events into one of five energy windows at rates up to 2 MHz/channel.

Effect of hydrogenation on the electrical and optical properties of CdZnTe substrates and HgCdTe epitaxial layers

NASA Astrophysics Data System (ADS)

Sitharaman, S.; Raman, R.; Durai, L.; Pal, Surendra; Gautam, Madhukar; Nagpal, Anjana; Kumar, Shiv; Chatterjee, S. N.; Gupta, S. C.

2005-12-01

In this paper, we report the experimental observations on the effect of plasma hydrogenation in passivating intrinsic point defects, shallow/deep levels and extended defects in low-resistivity undoped CdZnTe crystals. The optical absorption studies show transmittance improvement in the below gap absorption spectrum. Using variable temperature Hall measurement technique, the shallow defect level on which the penetrating hydrogen makes complex, has been identified. In 'compensated' n-type HgCdTe epitaxial layers, hydrogenation can improve the resistivity by two orders of magnitude.

Crystal Growth of CdTe by Gradient Freeze in Universal Multizone Crystallizator (UMC)

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Lehoczky, S. L.; Li, C.; Knuteson, D.; Raghothamachar, B.; Dudley, M.; Szoke, J.; Barczy, P.

2004-01-01

In the case of unsealed melt growth of an array of II-VI compounds, namely, CdTe, CdZnTe and ZnSe, there is a tremendous amount of experimental data describing the correlations between melt conditions and crystal quality. The results imply that the crystallinity quality can be improved if the melt was markedly superheated or long-time held before growth. It is speculated that after high superheating the associated complex dissociate and the spontaneous nucleation is retarded. In this study, crystals of CdTe were grown from melts which have undergone different thermal history by the unseeded gradient freeze method using the Universal Multizone Crystallizator (UMC). The effects of melt conditions on the quality of grown crystal were studied by various characterization techniques, including Synchrotron White Beam X-ray Topography (SWSXT), infrared microscopy, chemical analysis by glow discharge mass spectroscopy (GDMS), electrical conductivity and Hall measurements.

Low Power Camera-on-a-Chip Using CMOS Active Pixel Sensor Technology

NASA Technical Reports Server (NTRS)

Fossum, E. R.

1995-01-01

A second generation image sensor technology has been developed at the NASA Jet Propulsion Laboratory as a result of the continuing need to miniaturize space science imaging instruments. Implemented using standard CMOS, the active pixel sensor (APS) technology permits the integration of the detector array with on-chip timing, control and signal chain electronics, including analog-to-digital conversion.