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Sample records for charge carrier transport

  1. Charge carrier transport in polyvinylcarbazole

    NASA Astrophysics Data System (ADS)

    Tyutnev, Andrey P.; Saenko, Vladimir S.; Pozhidaev, Evgenii D.; Kolesnikov, Vladislav A.

    2006-07-01

    A critical analysis of the existing time-of-flight (TOF) data in poly(N-vinylcarbazole) (PVK) proves that these are highly controversial with claims and counterclaims about charge carrier transport (dispersive versus Gaussian). It is felt that the TOF method taken alone is incapable of resolving the standing dilemma. As a final means to resolve it, we propose a combination of two varieties of the TOF technique using both sheet-like and uniform carrier generation modes in conjunction with radiation-induced conductivity measurements. All three techniques are realized using the ELA-50 electron gun facility. To demonstrate the effectiveness of our approach we report experimental data for PVK, which show that carrier transport in this polymer is indeed dispersive. Evidence is presented substantiating the gross interference the surface traps could exert on the shape of a TOF transient. As a result, a preflight part of the TOF signal should not be used for parameter evaluation.

  2. Charge carrier transport in polycrystalline organic thin film based field effect transistors

    NASA Astrophysics Data System (ADS)

    Rani, Varsha; Sharma, Akanksha; Ghosh, Subhasis

    2016-05-01

    The charge carrier transport mechanism in polycrystalline thin film based organic field effect transistors (OFETs) has been explained using two competing models, multiple trapping and releases (MTR) model and percolation model. It has been shown that MTR model is most suitable for explaining charge carrier transport in grainy polycrystalline organic thin films. The energetic distribution of traps determined independently using Mayer-Neldel rule (MNR) is in excellent agreement with the values obtained by MTR model for copper phthalocyanine and pentacene based OFETs.

  3. Picosecond charge transport in rutile at high carrier densities studied by transient terahertz spectroscopy

    NASA Astrophysics Data System (ADS)

    Zajac, V.; Němec, H.; Kužel, P.

    2016-09-01

    We study terahertz photoconductivity of a rutile single crystal between 10 and 300 K under strong photoexcitation by femtosecond pulses at 266 nm. A marked dependence of the carrier mobility on the carrier density is observed leading to highly complex transport phenomena on a picosecond time scale. We develop a general model of carrier photoconductive response in the case of time dependent inhomogeneous distribution of carrier density and mobility. This allows us to assess an important role of both electrons and holes in the response of photoexcited rutile. At low temperatures, the carrier mobility is initially reduced due to the electron-hole scattering and increases by one order of magnitude upon ambipolar diffusion of the carriers into deeper regions of the sample. At room temperature, contributions of transient hot optical phonons and/or of midinfrared polaron excitations with charge-density-dependent dielectric strength emerge in the photoconductivity spectra.

  4. Analysis of Charge Carrier Transport in Organic Photovoltaic Thin Films and Nanoparticle Assemblies

    NASA Astrophysics Data System (ADS)

    Han, Xu; Maroudas, Dimitrios

    2014-03-01

    We present a systematic analysis of charge carrier transport in organic photovoltaic (OPV) devices based on phenomenological charge carrier transport models. These transient drift-diffusion-reaction models describe electron and hole transport and their trapping, detrapping, and recombination self-consistently with Poisson's equation for the electric field in the active layer. We predict transient currents in devices with active layers composed of P3HT, PCBM, and PBTDV polymers, as well as donor-acceptor blends. The propensity of the material to generate charge, zero-field carrier mobilities, as well as trapping, detrapping, and recombination rate coefficients are determined by fitting the modeling predictions to experimental data of photocurrent evolution. We have investigated effects of material structure and morphology by comparing the fitting outcomes for active layers consisting of both thin films and nanoparticle assemblies. We have also analyzed the effect on charge carrier transport of nanoparticle surface characteristics, as well as of thermal annealing of both thin-film and nanoparticle-assembly active layers. The model predictions provide valuable input toward synthesis of new nanoparticle assemblies that lead to improved OPV device performance.

  5. Intragrain charge transport in kesterite thin films—Limits arising from carrier localization

    NASA Astrophysics Data System (ADS)

    Hempel, Hannes; Redinger, Alex; Repins, Ingrid; Moisan, Camille; Larramona, Gerardo; Dennler, Gilles; Handwerg, Martin; Fischer, Saskia F.; Eichberger, Rainer; Unold, Thomas

    2016-11-01

    Intragrain charge carrier mobilities measured by time-resolved terahertz spectroscopy in state of the art Cu2ZnSn(S,Se)4 kesterite thin films are found to increase from 32 to 140 cm2 V-1 s-1 with increasing Se content. The mobilities are limited by carrier localization on the nanometer-scale, which takes place within the first 2 ps after carrier excitation. The localization strength obtained from the Drude-Smith model is found to be independent of the excited photocarrier density. This is in accordance with bandgap fluctuations as a cause of the localized transport. Charge carrier localization is a general issue in the probed kesterite thin films, which were deposited by coevaporation, colloidal inks, and sputtering followed by annealing with varying Se/S contents and yield 4.9%-10.0% efficiency in the completed device.

  6. Intragrain charge transport in kesterite thin films—Limits arising from carrier localization

    SciTech Connect

    Hempel, Hannes; Redinger, Alex; Repins, Ingrid; Moisan, Camille; Larramona, Gerardo; Dennler, Gilles; Handwerg, Martin; Fischer, Saskia F.; Eichberger, Rainer; Unold, Thomas

    2016-11-03

    Intragrain charge carrier mobilities measured by time-resolved terahertz spectroscopy in state of the art Cu2ZnSn(S,Se)4 kesterite thin films are found to increase from 32 to 140 cm2V-1s-1 with increasing Se content. The mobilities are limited by carrier localization on the nanometer-scale, which takes place within the first 2 ps after carrier excitation. The localization strength obtained from the Drude-Smith model is found to be independent of the excited photocarrier density. This is in accordance with bandgap fluctuations as a cause of the localized transport. Lastly, charge carrier localization is a general issue in the probed kesterite thin films, which were deposited by coevaporation, colloidal inks, and sputtering followed by annealing with varying Se/S contents and yield 4.9%-10.0% efficiency in the completed device.

  7. Intragrain charge transport in kesterite thin films—Limits arising from carrier localization

    DOE PAGES

    Hempel, Hannes; Redinger, Alex; Repins, Ingrid; ...

    2016-11-03

    Intragrain charge carrier mobilities measured by time-resolved terahertz spectroscopy in state of the art Cu2ZnSn(S,Se)4 kesterite thin films are found to increase from 32 to 140 cm2V-1s-1 with increasing Se content. The mobilities are limited by carrier localization on the nanometer-scale, which takes place within the first 2 ps after carrier excitation. The localization strength obtained from the Drude-Smith model is found to be independent of the excited photocarrier density. This is in accordance with bandgap fluctuations as a cause of the localized transport. Lastly, charge carrier localization is a general issue in the probed kesterite thin films, which weremore » deposited by coevaporation, colloidal inks, and sputtering followed by annealing with varying Se/S contents and yield 4.9%-10.0% efficiency in the completed device.« less

  8. Charge carrier transport and photogeneration in P3HT:PCBM photovoltaic blends.

    PubMed

    Laquai, Frédéric; Andrienko, Denis; Mauer, Ralf; Blom, Paul W M

    2015-06-01

    This article reviews the charge transport and photogeneration in bulk-heterojunction solar cells made from blend films of regioregular poly(3-hexylthiophene) (RR-P3HT) and methano-fullerene (PCBM). The charge transport, specifically the hole mobility in the RR-P3HT phase of the polymer:fullerene photovoltaic blend, is dramatically affected by thermal annealing. The hole mobility increases more than three orders of magnitude and reaches a value of up to 2 × 10(-4) cm(2) V(-1) s(-1) after the thermal annealing process as a result of an improved semi-crystallinity of the film. This significant increase of the hole mobility balances the electron and hole mobilities in a photovoltaic blend in turn reducing space-charge formation, and this is the most important factor for the strong enhancement of the photovoltaic efficiency compared to an as cast, that is, non-annealed device. In fact, the balanced charge carrier mobility in RR-P3HT:PCBM blends in combination with a field- and temperature-independent charge carrier generation and greatly reduced non-geminate recombination explains the large quantum efficiencies mea-sured in P3HT:PCBM photovoltaic devices.

  9. Charge Carrier Transport Mechanism Based on Stable Low Voltage Organic Bistable Memory Device.

    PubMed

    Ramana, V V; Moodley, M K; Kumar, A B V Kiran; Kannan, V

    2015-05-01

    A solution processed two terminal organic bistable memory device was fabricated utilizing films of polymethyl methacrylate PMMA/ZnO/PMMA on top of ITO coated glass. Electrical characterization of the device structure showed that the two terminal device exhibited favorable switching characteristics with an ON/OFF ratio greater than 1 x 10(4) when the voltage was swept between - 2 V and +3 V. The device maintained its state after removal of the bias voltage. The device did not show degradation after a 1-h retention test at 120 degrees C. The memory functionality was consistent even after fifty cycles of operation. The charge transport switching mechanism is discussed on the basis of carrier transport mechanism and our analysis of the data shows that the charge carrier trans- port mechanism of the device during the writing process can be explained by thermionic emission (TE) and space-charge-limited-current (SCLC) mechanism models while erasing process could be explained by the FN tunneling mechanism. This demonstration provides a class of memory devices with the potential for low-cost, low-power consumption applications, such as a digital memory cell.

  10. Polymer-Free Carbon Nanotube Thermoelectrics with Improved Charge Carrier Transport and Power Factor

    SciTech Connect

    Norton-Baker, Brenna; Ihly, Rachelle; Gould, Isaac E.; Avery, Azure D.; Owczarczyk, Zbyslaw R.; Ferguson, Andrew J.; Blackburn, Jeffrey L.

    2016-12-09

    Semiconducting single-walled carbon nanotubes (s-SWCNTs) have recently attracted attention for their promise as active components in a variety of optical and electronic applications, including thermoelectricity generation. Here we demonstrate that removing the wrapping polymer from the highly enriched s-SWCNT network leads to substantial improvements in charge carrier transport and thermoelectric power factor. These improvements arise primarily from an increase in charge carrier mobility within the s-SWCNT networks because of removal of the insulating polymer and control of the level of nanotube bundling in the network, which enables higher thin-film conductivity for a given carrier density. Ultimately, these studies demonstrate that highly enriched s-SWCNT thin films, in the complete absence of any accompanying semiconducting polymer, can attain thermoelectric power factors in the range of approximately 400 uW m-1K-2, which is on par with that of some of the best single-component organic thermoelectrics demonstrated to date.

  11. Spiro-OMeTAD single crystals: Remarkably enhanced charge-carrier transport via mesoscale ordering

    PubMed Central

    Shi, Dong; Qin, Xiang; Li, Yuan; He, Yao; Zhong, Cheng; Pan, Jun; Dong, Huanli; Xu, Wei; Li, Tao; Hu, Wenping; Brédas, Jean-Luc; Bakr, Osman M.

    2016-01-01

    We report the crystal structure and hole-transport mechanism in spiro-OMeTAD [2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9′-spirobifluorene], the dominant hole-transporting material in perovskite and solid-state dye-sensitized solar cells. Despite spiro-OMeTAD’s paramount role in such devices, its crystal structure was unknown because of highly disordered solution-processed films; the hole-transport pathways remained ill-defined and the charge carrier mobilities were low, posing a major bottleneck for advancing cell efficiencies. We devised an antisolvent crystallization strategy to grow single crystals of spiro-OMeTAD, which allowed us to experimentally elucidate its molecular packing and transport properties. Electronic structure calculations enabled us to map spiro-OMeTAD’s intermolecular charge-hopping pathways. Promisingly, single-crystal mobilities were found to exceed their thin-film counterparts by three orders of magnitude. Our findings underscore mesoscale ordering as a key strategy to achieving breakthroughs in hole-transport material engineering of solar cells. PMID:27152342

  12. Directional Charge-Carrier Transport in Oriented Benzodithiophene Covalent Organic Framework Thin Films.

    PubMed

    Medina, Dana D; Petrus, Michiel L; Jumabekov, Askhat N; Margraf, Johannes T; Weinberger, Simon; Rotter, Julian M; Clark, Timothy; Bein, Thomas

    2017-02-22

    Charge-carrier transport in oriented COF thin films is an important factor for realizing COF-based optoelectronic devices. We describe how highly oriented electron-donating benzodithiophene BDT-COF thin films serve as a model system for a directed charge-transport study. Oriented BDT-COF films were deposited on different electrodes with excellent control over film roughness and topology, allowing for high-quality electrode-COF interfaces suitable for device fabrication. Hole-only devices were constructed to study the columnar hole mobility of the BDT-COF films. The transport measurements reveal a clear dependency of the measured hole mobilities on the BDT-COF film thickness, where thinner films showed about two orders of magnitude higher mobilities than thicker ones. Transport measurements under illumination yielded an order of magnitude higher mobility than in the dark. In-plane electrical conductivity values of up to 5 × 10(-7) S cm(-1) were obtained for the oriented films. Impedance measurements of the hole-only devices provided further electrical description of the oriented BDT-COF films in terms of capacitance, recombination resistance, and dielectric constant. An exceptionally low dielectric constant value of approximately 1.7 was estimated for the BDT-COF films, a further indication of their highly porous nature. DFT and molecular-dynamics simulations were carried out to gain further insights into the relationships between the COF layer interactions, electronic structure, and the potential device performance.

  13. Bulk charge carrier transport in push-pull type organic semiconductor.

    PubMed

    Karak, Supravat; Liu, Feng; Russell, Thomas P; Duzhko, Volodimyr V

    2014-12-10

    Operation of organic electronic and optoelectronic devices relies on charge transport properties of active layer materials. The magnitude of charge carrier mobility, a key efficiency metrics of charge transport properties, is determined by the chemical structure of molecular units and their crystallographic packing motifs, as well as strongly depends on the film fabrication approaches that produce films with different degrees of anisotropy and structural order. Probed by the time-of-flight and grazing incidence X-ray diffraction techniques, bulk charge carrier transport, molecular packing, and film morphology in different structural phases of push-pull type organic semiconductor, 7,7'-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b']dithiophene-2,6-diyl)bis(6-fluoro-4-(5'-hexyl-[2,2'-bithiophen]-5yl)benzo[c][1,2,5] thiadiazole), one of the most efficient small-molecule photovoltaic materials to-date, are described herein. In the isotropic phase, the material is ambipolar with high mobilities for a fluid state. The electron and hole mobilities at the phase onset at 210.78 °C are 1.0 × 10(-3) cm(2)/(V s) and 6.5 × 10(-4) cm(2)/(V s), respectively. Analysis of the temperature and electric field dependences of the mobilities in the framework of Gaussian disorder formalism suggests larger energetic and positional disorder for electron transport sites. Below 210 °C, crystallization into a polycrystalline film with a triclinic unit cell symmetry and high degree of anisotropy leads to a 10-fold increase of hole mobility. The mobility is limited by the charge transfer along the direction of branched alkyl side chains. Below 90 °C, faster cooling rates produce even higher hole mobilities up to 2 × 10(-2) cm(2)/(V s) at 25 °C because of the more isotropic orientations of crystalline domains. These properties facilitate in understanding efficient material performance in photovoltaic devices and will guide further development of materials and devices.

  14. Distribution of charge carrier transport properties in organic semiconductors with Gaussian disorder

    NASA Astrophysics Data System (ADS)

    Lorrmann, Jens; Ruf, Manuel; Vocke, David; Dyakonov, Vladimir; Deibel, Carsten

    2014-05-01

    The charge carrier drift mobility in disordered semiconductors is commonly graphically extracted from time-of-flight (TOF) photocurrent transients yielding a single transit time. However, the term transit time is ambiguously defined and fails to deliver a mobility in terms of a statistical average. Here, we introduce an advanced computational procedure to evaluate TOF transients, which allows to extract the whole distribution of transit times and mobilities from the photocurrent transient, instead of a single value. This method, extending the work of Scott et al. (Phys. Rev. B 46, 8603 (1992)), is applicable to disordered systems with a Gaussian density of states and its accuracy is validated using one-dimensional Monte Carlo simulations. We demonstrate the superiority of this new approach by comparing it to the common geometrical analysis of hole TOF transients measured on poly(3-hexyl thiophene-2,5-diyl). The extracted distributions provide access to a very detailed and accurate analysis of the charge carrier transport. For instance, not only the mobility given by the mean transit time but also the mean mobility can be calculated. Whereas the latter determines the macroscopic photocurrent, the former is relevant for an accurate determination of the energetic disorder parameter σ within the Gaussian disorder model. σ derived by using the common geometrical method is, as we show, underestimated instead.

  15. A new approach to calculate charge carrier transport mobility in organic molecular crystals from imaginary time path integral simulations

    SciTech Connect

    Song, Linze; Shi, Qiang

    2015-05-07

    We present a new non-perturbative method to calculate the charge carrier mobility using the imaginary time path integral approach, which is based on the Kubo formula for the conductivity, and a saddle point approximation to perform the analytic continuation. The new method is first tested using a benchmark calculation from the numerical exact hierarchical equations of motion method. Imaginary time path integral Monte Carlo simulations are then performed to explore the temperature dependence of charge carrier delocalization and mobility in organic molecular crystals (OMCs) within the Holstein and Holstein-Peierls models. The effects of nonlocal electron-phonon interaction on mobility in different charge transport regimes are also investigated.

  16. Facet-selective charge carrier transport, deactivation mechanism and stabilization of a Cu2O photo-electro-catalyst.

    PubMed

    Li, Yang; Yun, Xiaogang; Chen, Hong; Zhang, Wenqin; Li, Yongdan

    2016-03-14

    A facet-dependent photo-deactivation mechanism of Cu2O was verified and reported, which is caused by the facet-dependent charge carrier transport. During irradiation, the {100} and {110} crystal facets are selectively corroded by the photo-generated holes, while the {111} facets are comparatively stable.

  17. Influence of high-pressure treatment on charge carrier transport in PbS colloidal quantum dot solids.

    PubMed

    Heo, Seung Jin; Yoon, Seokhyun; Oh, Sang Hoon; Yoon, Doo Hyun; Kim, Hyun Jae

    2014-01-21

    We investigated the effects of high-pressure treatment on charge carrier transport in PbS colloidal quantum dot (CQD) solids. We applied high pressure to PbS CQD solids using nitrogen gas to reduce the inter-dot distance. Using this simple process, we obtained conductive PbS CQD solids. Terahertz time-domain spectroscopy was used to study charge carrier transport as a function of pressure. We found that the minimum pressure needed to increase the dielectric constant, conductivity, and carrier mobility was 4 MPa. All properties dramatically improved at 5 MPa; for example, the mobility increased from 0.13 cm(2) V(-1) s(-1) at 0.1 MPa to 0.91 cm(2) V(-1) s(-1) at 5 MPa. We propose this simple process as a nondestructive approach for making conductive PbS CQD solids that are free of chemical and physical defects.

  18. Compositional dependence of charge carrier transport in kesterite Cu2ZnSnS4 solar cells

    NASA Astrophysics Data System (ADS)

    Just, Justus; Nichterwitz, Melanie; Lützenkirchen-Hecht, Dirk; Frahm, Ronald; Unold, Thomas

    2016-12-01

    Cu2ZnSnS4 solar cells deposited by thermal co-evaporation have been characterized structurally and electronically to determine the dependence of the electronic properties on the elemental composition of the kesterite phase, which can significantly deviate from the total sample composition. To this end, the kesterite phase content and composition were determined by a combination of X-ray fluorescence and X-ray absorption measurements. The electronic properties, such as carrier density and minority carrier diffusion length, were determined by electron beam induced current measurements and capacitance-voltage profiling. The charge-carrier transport properties are found to strongly depend on the Cu/(Sn+Zn) ratio of the kesterite phase. For the Cu-poor sample, a minority carrier diffusion length of 270 nm and a total collection length of approx. 500 nm are deduced, indicating that current collection should not be an issue in thin devices.

  19. A quantitative model for charge carrier transport, trapping and recombination in nanocrystal-based solar cells

    NASA Astrophysics Data System (ADS)

    Bozyigit, Deniz; Lin, Weyde M. M.; Yazdani, Nuri; Yarema, Olesya; Wood, Vanessa

    2015-01-01

    Improving devices incorporating solution-processed nanocrystal-based semiconductors requires a better understanding of charge transport in these complex, inorganic-organic materials. Here we perform a systematic study on PbS nanocrystal-based diodes using temperature-dependent current-voltage characterization and thermal admittance spectroscopy to develop a model for charge transport that is applicable to different nanocrystal-solids and device architectures. Our analysis confirms that charge transport occurs in states that derive from the quantum-confined electronic levels of the individual nanocrystals and is governed by diffusion-controlled trap-assisted recombination. The current is limited not by the Schottky effect, but by Fermi-level pinning because of trap states that is independent of the electrode-nanocrystal interface. Our model successfully explains the non-trivial trends in charge transport as a function of nanocrystal size and the origins of the trade-offs facing the optimization of nanocrystal-based solar cells. We use the insights from our charge transport model to formulate design guidelines for engineering higher-performance nanocrystal-based devices.

  20. A quantitative model for charge carrier transport, trapping and recombination in nanocrystal-based solar cells

    PubMed Central

    Bozyigit, Deniz; Lin, Weyde M. M.; Yazdani, Nuri; Yarema, Olesya; Wood, Vanessa

    2015-01-01

    Improving devices incorporating solution-processed nanocrystal-based semiconductors requires a better understanding of charge transport in these complex, inorganic–organic materials. Here we perform a systematic study on PbS nanocrystal-based diodes using temperature-dependent current–voltage characterization and thermal admittance spectroscopy to develop a model for charge transport that is applicable to different nanocrystal-solids and device architectures. Our analysis confirms that charge transport occurs in states that derive from the quantum-confined electronic levels of the individual nanocrystals and is governed by diffusion-controlled trap-assisted recombination. The current is limited not by the Schottky effect, but by Fermi-level pinning because of trap states that is independent of the electrode–nanocrystal interface. Our model successfully explains the non-trivial trends in charge transport as a function of nanocrystal size and the origins of the trade-offs facing the optimization of nanocrystal-based solar cells. We use the insights from our charge transport model to formulate design guidelines for engineering higher-performance nanocrystal-based devices. PMID:25625647

  1. FOB-SH: Fragment orbital-based surface hopping for charge carrier transport in organic and biological molecules and materials

    NASA Astrophysics Data System (ADS)

    Spencer, J.; Gajdos, F.; Blumberger, J.

    2016-08-01

    We introduce a fragment orbital-based fewest switches surface hopping method, FOB-SH, designed to efficiently simulate charge carrier transport in strongly fluctuating condensed phase systems such as organic semiconductors and biomolecules. The charge carrier wavefunction is expanded and the electronic Hamiltonian constructed in a set of singly occupied molecular orbitals of the molecular sites that mediate the charge transfer. Diagonal elements of the electronic Hamiltonian (site energies) are obtained from a force field, whereas the off-diagonal or electronic coupling matrix elements are obtained using our recently developed analytic overlap method. We derive a general expression for the exact forces on the adiabatic ground and excited electronic state surfaces from the nuclear gradients of the charge localized electronic states. Applications to electron hole transfer in a model ethylene dimer and through a chain of ten model ethylenes validate our implementation and demonstrate its computational efficiency. On the larger system, we calculate the qualitative behaviour of charge mobility with change in temperature T for different regimes of the intermolecular electronic coupling. For small couplings, FOB-SH predicts a crossover from a thermally activated regime at low temperatures to a band-like transport regime at higher temperatures. For higher electronic couplings, the thermally activated regime disappears and the mobility decreases according to a power law. This is interpreted by a gradual loss in probability for resonance between the sites as the temperature increases. The polaron hopping model solved for the same system gives a qualitatively different result and underestimates the mobility decay at higher temperatures. Taken together, the FOB-SH methodology introduced here shows promise for a realistic investigation of charge carrier transport in complex organic, aqueous, and biological systems.

  2. Charge carrier transport and collection enhancement of copper indium diselenide photoactive nanoparticle-ink by laser crystallization

    SciTech Connect

    Nian, Qiong; Cheng, Gary J.; Zhang, Martin Y.; Wang, Yuefeng; Das, Suprem R.; Bhat, Venkataprasad S.; Huang, Fuqiang

    2014-09-15

    There has been increasing needs for cost-effective and high performance thin film deposition techniques for photovoltaics. Among all deposition techniques, roll-to-roll printing of nanomaterials has been a promising method. However, the printed thin film contains many internal imperfections, which reduce the charge-collection performance. Here, direct pulse laser crystallization (DPLC) of photoactive nanoparticles-inks is studied to meet this challenge. In this study, copper indium selenite (CIS) nanoparticle-inks is applied as an example. Enhanced crystallinity, densified structure in the thin film is resulted after DLPC under optimal conditions. It is found that the decreased film internal imperfections after DPLC results in reducing scattering and multi-trapping effects. Both of them contribute to better charge-collection performance of CIS absorber material by increasing extended state mobility and carrier lifetime, when carrier transport and kinetics are coupled. Charge carrier transport was characterized after DPLC, showing mobility increased by 2 orders of magnitude. Photocurrent under AM1.5 illumination was measured and shown 10 times enhancement of integrated power density after DPLC, which may lead to higher efficiency in photo-electric energy conversion.

  3. Photogeneration and transport of charge carriers in hybrid materials of conjugated polymers and dye-sensitized TiO2

    NASA Astrophysics Data System (ADS)

    Däubler, T. K.; Glowacki, I.; Scherf, U.; Ulanski, J.; Hörhold, H.-H.; Neher, D.

    1999-12-01

    Steady state photoconductivity and current-voltage (I-V) experiments are performed on solid films of organic/inorganic composites of dye-sensitized TiO2 in combination with poly(N-vinylcarbazole) (PVK), a ladder-type PPP and a soluble PPV derivative. The I-V characteristics of the composites in the dark are explained by the formation of percolation networks of nanoparticles between the electrodes. Photoaction spectra of the devices prove that the photogeneration of charge carriers is significantly enhanced and spectrally broadened only if electron transfer from the polymer to the dye is possible. Increasing the concentration of the nanoparticles in the hybrid materials changes the spectral shape of the photoresponse. For high TiO2 contents signatures due to the absorption of the Ruthenium dye can be observed. The different electronic properties of anatase/brookite TiO2 and rutile TiO2 have only minor effects on the generation of charge carriers and on the shape of the photoaction spectra. Indeed, photocurrents are more related to the Brunauer—Emmett-Teller surface area of the nanoparticles and thus, to the amount of dye adsorbed. Charge collection efficiencies exceeding 100%, observed for both bias directions, can be explained by photoconductivity gain. It is proposed that recombination is reduced by transport of the oppositely charged carriers in two different phases.

  4. Charge carrier thermalization in organic diodes

    PubMed Central

    van der Kaap, N. J.; Koster, L. J. A.

    2016-01-01

    Charge carrier mobilities of organic semiconductors are often characterized using steady-state measurements of space charge limited diodes. These measurements assume that charge carriers are in a steady-state equilibrium. In reality, however, energetically hot carriers are introduces by photo-excitation and injection into highly energetic sites from the electrodes. These carriers perturb the equilibrium density of occupied states, and therefore change the overall charge transport properties. In this paper, we look into the effect of energetically hot carriers on the charge transport in organic semiconductors using steady state kinetic Monte Carlo simulations. For injected hot carriers in a typical organic semiconductor, rapid energetic relaxation occurs in the order of tens of nanoseconds, which is much faster than the typical transit time of a charge carrier throught the device. Furthermore, we investigate the impact of photo-generated carriers on the steady-state mobility. For a typical organic voltaic material, an increase in mobility of a factor of 1.1 is found. Therefore, we conclude that the impact of energetically hot carriers on normal device operation is limited. PMID:26791095

  5. Massively parallel kinetic Monte Carlo simulations of charge carrier transport in organic semiconductors

    NASA Astrophysics Data System (ADS)

    van der Kaap, N. J.; Koster, L. J. A.

    2016-02-01

    A parallel, lattice based Kinetic Monte Carlo simulation is developed that runs on a GPGPU board and includes Coulomb like particle-particle interactions. The performance of this computationally expensive problem is improved by modifying the interaction potential due to nearby particle moves, instead of fully recalculating it. This modification is achieved by adding dipole correction terms that represent the particle move. Exact evaluation of these terms is guaranteed by representing all interactions as 32-bit floating numbers, where only the integers between -222 and 222 are used. We validate our method by modelling the charge transport in disordered organic semiconductors, including Coulomb interactions between charges. Performance is mainly governed by the particle density in the simulation volume, and improves for increasing densities. Our method allows calculations on large volumes including particle-particle interactions, which is important in the field of organic semiconductors.

  6. Thermal influence on charge carrier transport in solar cells based on GaAs PN junctions

    SciTech Connect

    Osses-Márquez, Juan; Calderón-Muñoz, Williams R.

    2014-10-21

    The electron and hole one-dimensional transport in a solar cell based on a Gallium Arsenide (GaAs) PN junction and its dependency with electron and lattice temperatures are studied here. Electrons and heat transport are treated on an equal footing, and a cell operating at high temperatures using concentrators is considered. The equations of a two-temperature hydrodynamic model are written in terms of asymptotic expansions for the dependent variables with the electron Reynolds number as a perturbation parameter. The dependency of the electron and hole densities through the junction with the temperature is analyzed solving the steady-state model at low Reynolds numbers. Lattice temperature distribution throughout the device is obtained considering the change of kinetic energy of electrons due to interactions with the lattice and heat absorbed from sunlight. In terms of performance, higher values of power output are obtained with low lattice temperature and hot energy carriers. This modeling contributes to improve the design of heat exchange devices and thermal management strategies in photovoltaic technologies.

  7. Charge-carrier transport and recombination in heteroepitaxial CdTe

    SciTech Connect

    Kuciauskas, Darius Farrell, Stuart; Dippo, Pat; Moseley, John; Moutinho, Helio; Li, Jian V.; Allende Motz, A. M.; Kanevce, Ana; Zaunbrecher, Katherine; Gessert, Timothy A.; Levi, Dean H.; Metzger, Wyatt K.; Colegrove, Eric; Sivananthan, S.

    2014-09-28

    We analyze charge-carrier dynamics using time-resolved spectroscopy and varying epitaxial CdTe thickness in undoped heteroepitaxial CdTe/ZnTe/Si. By employing one-photon and nonlinear two-photon excitation, we assess surface, interface, and bulk recombination. Two-photon excitation with a focused laser beam enables characterization of recombination velocity at the buried epilayer/substrate interface, 17.5 μm from the sample surface. Measurements with a focused two-photon excitation beam also indicate a fast diffusion component, from which we estimate an electron mobility of 650 cm² (Vs)⁻¹ and diffusion coefficient D of 17 cm² s⁻¹. We find limiting recombination at the epitaxial film surface (surface recombination velocity Ssurface = (2.8 ± 0.3) × 10⁵cm s ⁻¹) and at the heteroepitaxial interface (interface recombination velocity Sinterface = (4.8 ± 0.5) × 10⁵ cm s⁻¹). The results demonstrate that reducing surface and interface recombination velocity is critical for photovoltaic solar cells and electronic devices that employ epitaxial CdTe.

  8. Charge carrier transport properties in polymer liquid crystals containing oxadiazole and amine moieties in the same side chain.

    PubMed

    Kawamoto, Masuki; Mochizuki, Hiroyuki; Ikeda, Tomiki; Iino, Hiroaki; Hanna, Jun-ichi

    2005-05-19

    Steady-state and transient photocurrent measurements were carried out to study the charge carrier transport properties of polymer liquid crystal (LC) containing oxadiazole (OXD) and amine moieties in the same side chain. The steady-state photocurrent measurement with asymmetric electrodes of ITO and Al and a short penetration depth of the illumination light indicated that both electrons and holes can be transported in this film. The transient hole photocurrent observed by time-of-flight (TOF) experiments was dispersive at room temperature. The hole drift mobility significantly depended on temperature and electric field and was determined to be 6.1 x 10(-8) cm2/Vs at a field of 9.1 x 10(5) V/cm. According to the disorder formalism, the Gaussian width of the density of states was determined to be 170 meV for holes. Despite the indication of possible electron transport in this film, we could not determine the electron mobility by TOF experiments due to strong dispersive photocurrent. We discuss the present charge transport properties of the film in relation to a large dipole attributed to an electrical push-pull structure of p-dimethylaminophenyl-substitited OXD moiety in polymer LC and its electroluminescent properties.

  9. The Effect of Dynamical Image Forces on The Transport Properties of Charge Carriers and Excitons in Metal-Semiconductor Nanostructures

    NASA Astrophysics Data System (ADS)

    Cherqui, Charles

    We examine coupled metal nanoparticle/semiconductor hybrid nano-stuctures and analyze the effect that the surface response metal nanoparticles (MNP) has on the transport properties of the system. This analysis is accomplished by treating surface plasmons as quantum oscillators. We find that charge carriers traveling in the nearby semiconductors experience a repulsion due to the ground state energy of the quantum SP (QSP). This effect is shown to be the quantum analogue of the ponderomotive effect found in plasma physics. We then extend the theory to examine the transport properties of carbon nano-tube excitons in the presence of localized SPs and show that this system maps onto a Fano-Anderson Hamiltonian. Through numerical simulation, we show that the emission patterns of the system are severely modified by the presence of localized surface plasmons.

  10. Engineering Thin Films of a Tetrabenzoporphyrin toward Efficient Charge-Carrier Transport: Selective Formation of a Brickwork Motif.

    PubMed

    Takahashi, Kohtaro; Shan, Bowen; Xu, Xiaomin; Yang, Shuaijun; Koganezawa, Tomoyuki; Kuzuhara, Daiki; Aratani, Naoki; Suzuki, Mitsuharu; Miao, Qian; Yamada, Hiroko

    2017-03-08

    Tetrabenzoporphyrin (BP) is a p-type organic semiconductor characterized by the large, rigid π-framework, excellent stability, and good photoabsorption capability. These characteristics make BP and its derivatives prominent active-layer components in organic electronic and optoelectronic devices. However, the control of the solid-state arrangement of BP frameworks, especially in solution-processed thin films, has not been intensively explored, and charge-carrier mobilities observed in BP-based materials have stayed relatively low as compared to those in the best organic molecular semiconductors. This work concentrates on engineering the solid-state packing of a BP derivative, 5,15-bis(triisopropylsilyl)ethynyltetrabenzoporphyrin (TIPS-BP), toward achieving efficient charge-carrier transport in its solution-processed thin films. The effort leads to the selective formation of a brickwork packing that has two dimensionally extended π-staking. The maximum field-effect hole mobility in the resulting films reaches 1.1 cm(2) V(-1) s(-1), which is approximately 14 times higher than the record value for pristine free-base BP (0.070 cm(2) V(-1) s(-1)). This achievement is enabled mainly through the optimization of three factors; namely, deposition process, cast solvent, and self-assembled monolayer that constitutes the dielectric surface. On the other hand, polarized-light microscopy and grazing-incident wide-angle X-ray diffraction analyses show that there remains some room for improvement in the in-plane homogeneity of molecular alignment, suggesting even higher charge-carrier mobilities can be obtained upon further optimization. These results will provide a useful basis for the polymorph engineering and morphology optimization in solution-processed organic molecular semiconductors.

  11. Charge-carrier transport mechanisms in composites containing carbon-nanotube inclusions

    SciTech Connect

    Usanov, D. A. Skripal’, A. V.; Romanov, A. V.

    2015-12-15

    From the microwave-radiation transmittance and reflectance spectra, the temperature dependence of the complex permittivity of carbon nanotubes, subjected to high-temperature annealing, and composite materials produced on their basis is determined. The electron transport mechanisms in composites with inclusions of unannealed carbon nanotubes and nanotubes subjected to high-temperature annealing are determined. The influence of the annealing temperature on the parameters that are characteristic of these mechanisms and control the temperature dependence of the conductivity of multiwall carbon nanotubes is established.

  12. In-crystal and surface charge transport of electric-field-induced carriers in organic single-crystal semiconductors.

    PubMed

    Takeya, J; Kato, J; Hara, K; Yamagishi, M; Hirahara, R; Yamada, K; Nakazawa, Y; Ikehata, S; Tsukagoshi, K; Aoyagi, Y; Takenobu, T; Iwasa, Y

    2007-05-11

    Gate-voltage dependence of carrier mobility is measured in high-performance field-effect transistors of rubrene single crystals by simultaneous detection of the longitudinal conductivity sigma(square) and Hall coefficient R(H). The Hall mobility mu(H) (identical with sigma(square)R(H)) reaches nearly 10 cm(2)/V s when relatively low-density carriers (<10(11) cm(-2)) distribute into the crystal. mu(H) rapidly decreases with higher-density carriers as they are essentially confined to the surface and are subjected to randomness of the amorphous gate insulators. The mechanism to realize high carrier mobility in the organic transistor devices involves intrinsic-semiconductor character of the high-purity organic crystals and diffusive bandlike carrier transport in the bulk.

  13. Analysis of carrier transport and carrier trapping in organic diodes with polyimide-6,13-Bis(triisopropylsilylethynyl)pentacene double-layer by charge modulation spectroscopy and optical second harmonic generation measurement

    SciTech Connect

    Lim, Eunju E-mail: taguchi.d.aa@m.titech.ac.jp; Taguchi, Dai E-mail: taguchi.d.aa@m.titech.ac.jp Iwamoto, Mitsumasa E-mail: taguchi.d.aa@m.titech.ac.jp

    2014-08-18

    We studied the carrier transport and carrier trapping in indium tin oxide/polyimide (PI)/6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)/Au diodes by using charge modulation spectroscopy (CMS) and time-resolved electric field induced optical second harmonic generation (TR-EFISHG) measurements. TR-EFISHG directly probes the spatial carrier behaviors in the diodes, and CMS is useful in explaining the carrier motion with respect to energy. The results clearly indicate that the injected carriers move across TIPS-pentacene thorough the molecular energy states of TIPS-pentacene and accumulate at the PI/TIPS-pentacene interface. However, some carriers are trapped in the PI layers. These findings take into account the capacitance-voltage and current-voltage characteristics of the diodes.

  14. Effective Charge Carrier Utilization in Photocatalytic Conversions.

    PubMed

    Zhang, Peng; Wang, Tuo; Chang, Xiaoxia; Gong, Jinlong

    2016-05-17

    Continuous efforts have been devoted to searching for sustainable energy resources to alleviate the upcoming energy crises. Among various types of new energy resources, solar energy has been considered as one of the most promising choices, since it is clean, sustainable, and safe. Moreover, solar energy is the most abundant renewable energy, with a total power of 173 000 terawatts striking Earth continuously. Conversion of solar energy into chemical energy, which could potentially provide continuous and flexible energy supplies, has been investigated extensively. However, the conversion efficiency is still relatively low since complicated physical, electrical, and chemical processes are involved. Therefore, carefully designed photocatalysts with a wide absorption range of solar illumination, a high conductivity for charge carriers, a small number of recombination centers, and fast surface reaction kinetics are required to achieve a high activity. This Account describes our recent efforts to enhance the utilization of charge carriers for semiconductor photocatalysts toward efficient solar-to-chemical energy conversion. During photocatalytic reactions, photogenerated electrons and holes are involved in complex processes to convert solar energy into chemical energy. The initial step is the generation of charge carriers in semiconductor photocatalysts, which could be enhanced by extending the light absorption range. Integration of plasmonic materials and introduction of self-dopants have been proved to be effective methods to improve the light absorption ability of photocatalysts to produce larger amounts of photogenerated charge carriers. Subsequently, the photogenerated electrons and holes migrate to the surface. Therefore, acceleration of the transport process can result in enhanced solar energy conversion efficiency. Different strategies such as morphology control and conductivity improvement have been demonstrated to achieve this goal. Fine-tuning of the

  15. Mean carrier transport properties and charge collection dynamics of single-crystal, natural type IIa diamonds from ion-induced conductivity measurements

    SciTech Connect

    Han, Sung Su

    1993-09-01

    Ion-induced conductivity has been used to investigate the detector characteristics of diamond detectors. Both integrated-charge, and time-resolved current measurements were performed to examine the mean carrier transport properties of diamond and the dynamics of charge collection under highly-localized and high-density excitation conditions. The integrated-charge measurements were conducted with a standard pulse-counting system with 241Am radioactivity as the excitation source for the detectors. The time-resolved current measurements were performed using a 70 GHz random sampling oscilloscope with the detectors incorporated into high-speed microstrip transmission lines and the excitation source for these measurements was an ion beam of either 5-MeV He+ or 10-MeV Si3+. The detectors used in both experiments can be described as metal-semiconductor-metal (MSM) devices where a volume of the detector material is sandwiched between two metal plates. A charge collection model was developed to interpret the integrated-charge measurements which enabled estimation of the energy required to produce an electron-hole pair (ϵdi) and the mean carrier transport properties in diamond, such as carrier mobility and lifetime, and the behavior of the electrical contacts to diamond.

  16. Localized charge carriers in graphene nanodevices

    SciTech Connect

    Bischoff, D. Varlet, A.; Simonet, P.; Eich, M.; Overweg, H. C.; Ihn, T.; Ensslin, K.

    2015-09-15

    Graphene—two-dimensional carbon—is a material with unique mechanical, optical, chemical, and electronic properties. Its use in a wide range of applications was therefore suggested. From an electronic point of view, nanostructured graphene is of great interest due to the potential opening of a band gap, applications in quantum devices, and investigations of physical phenomena. Narrow graphene stripes called “nanoribbons” show clearly different electronical transport properties than micron-sized graphene devices. The conductivity is generally reduced and around the charge neutrality point, the conductance is nearly completely suppressed. While various mechanisms can lead to this observed suppression of conductance, disordered edges resulting in localized charge carriers are likely the main cause in a large number of experiments. Localized charge carriers manifest themselves in transport experiments by the appearance of Coulomb blockade diamonds. This review focuses on the mechanisms responsible for this charge localization, on interpreting the transport details, and on discussing the consequences for physics and applications. Effects such as multiple coupled sites of localized charge, cotunneling processes, and excited states are discussed. Also, different geometries of quantum devices are compared. Finally, an outlook is provided, where open questions are addressed.

  17. Time-resolved correlative optical microscopy of charge-carrier transport, recombination, and space-charge fields in CdTe heterostructures

    NASA Astrophysics Data System (ADS)

    Kuciauskas, Darius; Myers, Thomas H.; Barnes, Teresa M.; Jensen, Søren A.; Allende Motz, Alyssa M.

    2017-02-01

    From time- and spatially resolved optical measurements, we show that extended defects can have a large effect on the charge-carrier recombination in II-VI semiconductors. In CdTe double heterostructures grown by molecular beam epitaxy on the InSb (100)-orientation substrates, we characterized the extended defects and found that near stacking faults the space-charge field extends by 2-5 μm. Charge carriers drift (with the space-charge field strength of 730-1,360 V cm-1) and diffuse (with the mobility of 260 ± 30 cm2 V-1 s-1) toward the extended defects, where the minority-carrier lifetime is reduced from 560 ns to 0.25 ns. Therefore, the extended defects are nonradiative recombination sinks that affect areas significantly larger than the typical crystalline grains in II-VI solar cells. From the correlative time-resolved photoluminescence and second-harmonic generation microscopy data, we developed a band-diagram model that can be used to analyze the impact of extended defects on solar cells and other electronic devices.

  18. Generation-dependent charge carrier transport in Cu(In,Ga)Se2/CdS/ZnO thin-film solar-cells

    NASA Astrophysics Data System (ADS)

    Nichterwitz, Melanie; Caballero, Raquel; Kaufmann, Christian A.; Schock, Hans-Werner; Unold, Thomas

    2013-01-01

    Cross section electron-beam induced current (EBIC) and illumination-dependent current voltage (IV) measurements show that charge carrier transport in Cu(In,Ga)Se2 (CIGSe)/CdS/ZnO solar-cells is generation-dependent. We perform a detailed analysis of CIGSe solar cells with different CdS layer thicknesses and varying Ga-content in the absorber layer. In conjunction with numerical simulations, EBIC and IV data are used to develop a consistent model for charge and defect distributions with a focus on the heterojunction region. The best model to explain our experimental data is based on a p+ layer at the CIGSe/CdS interface leading to generation-dependent transport in EBIC at room temperature. Acceptor-type defect states at the CdS/ZnO interface cause a significant reduction of the photocurrent in the red-light illuminated IV characteristics at low temperatures (red kink effect). Shallow donor-type defect states at the p+ layer/CdS interface of some grains of the absorber layer are responsible for grain specific, i.e., spatially inhomogeneous, charge carrier transport observed in EBIC.

  19. Enhanced Charge Carrier Transport and Device Performance Through Dual-Cesium Doping in Mixed-Cation Perovskite Solar Cells with Near Unity Free Carrier Ratios.

    PubMed

    Ye, Tao; Petrović, Miloš; Peng, Shengjie; Yoong, Jeremy Lee Kong; Vijila, Chellappan; Ramakrishna, Seeram

    2017-01-25

    PbI2-enriched mixed perovskite film [FA0.81MA0.15Pb(I0.836Br0.15)3] has been widely studied due to its great potential in perovskite solar cell (PSC) applications. Herein, a FA0.81MA0.15Pb(I0.836Br0.15)3 film has been fabricated with the temperature-dependent optical absorption spectra utilized to determine its exciton binding energy. A ∼13 meV exciton binding energy is estimated, and a near-unity fraction of free carriers out of the total photoexcitons has been obtained in the solar cell operating regime at equilibrium state. PSCs are fabricated with this mixed perovskite film, but a significant electron transport barrier at the TiO2-perovskite interface limited their performance. Cs2CO3 and CsI are then utilized as functional enhancers with which to substantially balance the electron and hole transport and increase the carriers (both electrons and holes) mobilities in PSCs, resulting in much-improved solar-cell performance. The modified PSCs exhibit reproducible power conversion efficiency (PCE) values with little hysteresis effect in the J-V curves, achieving PCEs up to 19.5% for the Cs2CO3-modified PSC and 20.6% when subsequently further doped with CsI.

  20. Optimization of charge carrier transport balance for performance improvement of PDPP3T-based polymer solar cells prepared using a hot solution.

    PubMed

    Wang, Jian; Zhang, Fujun; Zhang, Miao; Wang, Wenbin; An, Qiaoshi; Li, Lingliang; Sun, Qianqian; Tang, Weihua; Zhang, Jian

    2015-04-21

    Polymer solar cells (PSCs), with poly(diketopyrrolopyrrole-terthiophene) (PDPP3T):[6,6]-phenyl-C71-butyric acid methyl ester (PC71BM) as the active layers, were fabricated using solutions of different temperatures. The best power conversion efficiency (PCE) of the PSCs prepared using a hot solution was about 6.22%, which is better than 5.54% for PSCs prepared using cool (room temperature) solutions and 5.85% for PSCs prepared using cool solutions with a 1,8-diiodooctane (DIO) solvent additive. The underlying reasons for the improved PCE of the PSCs prepared using a hot solution could be attributed to the more dispersive donor and acceptor distribution in the active layer, resulting in a better bi-continuous interpenetrating network for exciton dissociation and charge carrier transport. An enhanced and more balanced charge carrier transport in the active layer is obtained for the PSCs prepared using a hot solution, which can be determined from the J-V curves of the related hole-only and electron-only devices.

  1. Graded morphology in bulk-heterojunction solar cells based on colloidal semiconductor nanostructures: Directed charge-separation and facile carrier transport

    NASA Astrophysics Data System (ADS)

    Dasgupta, Uttiya; Pal, Amlan J.

    2016-08-01

    We introduce density gradient of p- and n-type compound semiconductor nanostructures in bulk-heterojunction (BHJ) solar cells. The graded BHJs (GBHJs) were formed with the p-type copper-zinc-tin-sulfide (Cu2ZnSnS4) nanoparticles and n-type Bi2S3 nanorods, both of which were based on nontoxic and earth-abundant elements and were grown at a moderate reaction temperature (180 °C). The concentration gradient of the nanostructures in the GBHJs provided a preferred directionality of nano-depletion regions for directed charge separation and also a controlled vertical segregation for ever-increasing carrier-transport pathways during the charge-extraction process. A comparison of solar cell characteristics having a bilayer, a BHJ, and a GBHJ structure is being presented. The performance of the thickness-optimized devices for highest efficiency shows that the GBHJ offered an improved short-circuit current as compared to the bilayer and the BHJ structures and a higher fill-factor as compared to the BHJ device. The overall energy conversion efficiency (η) of GBHJ exceeded that of the other two heterojunctions. The advantages of GBHJ structures in yielding an improved η have been explained through an increased exciton dissociation process along with a lower carrier recombination as compared to the bilayer and the BHJ structures, respectively. Series and shunt resistances, which were derived from current-voltage characteristics and impedance spectroscopy, supported such analyses.

  2. Correlation of film morphology and defect content with the charge-carrier transport in thin-film transistors based on ZnO nanoparticles

    SciTech Connect

    Polster, S.; Jank, M. P. M.; Frey, L.

    2016-01-14

    The correlation of defect content and film morphology with the charge-carrier transport in field-effect devices based on zinc oxide nanoparticles was investigated. Changes in the defect content and the morphology were realized by annealing and sintering of the nanoparticle thin films. Temperature-dependent electrical measurements reveal that the carrier transport is thermally activated for both the unsintered and sintered thin films. Reduced energetic barrier heights between the particles have been determined after sintering. Additionally, the energetic barrier heights between the particles can be reduced by increasing the drain-to-source voltage and the gate-to-source voltage. The changes in the barrier height are discussed with respect to information obtained by scanning electron microscopy and photoluminescence measurements. It is found that a reduction of surface states and a lower roughness at the interface between the particle layer and the gate dielectric lead to lower barrier heights. Both surface termination and layer morphology at the interface affect the barrier height and thus are the main criteria for mobility improvement and device optimization.

  3. Charge carrier mobility in hybrid halide perovskites.

    PubMed

    Motta, Carlo; El-Mellouhi, Fedwa; Sanvito, Stefano

    2015-08-03

    The charge transport properties of hybrid halide perovskites are investigated with a combination of density functional theory including van der Waals interaction and the Boltzmann theory for diffusive transport in the relaxation time approximation. We find the mobility of electrons to be in the range 5-10 cm(2)V(-1)s(-1) and that for holes within 1-5 cm(2)V(-1)s(-1), where the variations depend on the crystal structure investigated and the level of doping. Such results, in good agreement with recent experiments, set the relaxation time to about 1 ps, which is the time-scale for the molecular rotation at room temperature. For the room temperature tetragonal phase we explore two possible orientations of the organic cations and find that the mobility has a significant asymmetry depending on the direction of the current with respect to the molecular axis. This is due mostly to the way the PbI3 octahedral symmetry is broken. Interestingly we find that substituting I with Cl has minor effects on the mobilities. Our analysis suggests that the carrier mobility is probably not a key factor in determining the high solar-harvesting efficiency of this class of materials.

  4. Charge carrier mobility in hybrid halide perovskites

    PubMed Central

    Motta, Carlo; El-Mellouhi, Fedwa; Sanvito, Stefano

    2015-01-01

    The charge transport properties of hybrid halide perovskites are investigated with a combination of density functional theory including van der Waals interaction and the Boltzmann theory for diffusive transport in the relaxation time approximation. We find the mobility of electrons to be in the range 5–10 cm2V−1s−1 and that for holes within 1–5 cm2V−1s−1, where the variations depend on the crystal structure investigated and the level of doping. Such results, in good agreement with recent experiments, set the relaxation time to about 1 ps, which is the time-scale for the molecular rotation at room temperature. For the room temperature tetragonal phase we explore two possible orientations of the organic cations and find that the mobility has a significant asymmetry depending on the direction of the current with respect to the molecular axis. This is due mostly to the way the PbI3 octahedral symmetry is broken. Interestingly we find that substituting I with Cl has minor effects on the mobilities. Our analysis suggests that the carrier mobility is probably not a key factor in determining the high solar-harvesting efficiency of this class of materials. PMID:26235910

  5. Effect of graphene-oxide on the microstructure and charge carrier transport of polyaniline nanocomposites under low applied electric fields

    NASA Astrophysics Data System (ADS)

    Mombrú, Dominique; Romero, Mariano; Faccio, Ricardo; Mombrú, Álvaro W.

    2017-01-01

    We report a study on the preparation and characterization of polyaniline-graphene oxide (PANI-GO-X) nanocomposites focusing in the study of its structure, microstructure, and correlations with electrical transport properties under low applied electric fields. X-ray diffraction analysis showed evidence of graphene oxide (GO) blending between polyaniline fibers, and according to small angle X-ray scattering, the fractal dimensionality was quasi-one dimensional for all nanocomposites. Confocal Raman spectroscopy revealed that the addition of GO leads to a notorious decrease of the polaron population of polyaniline. A significant increase in resistivity was observed for PANI-GO-X nanocomposites with respect to pure polyaniline, in agreement with the decrease in the polaron population. The electrical transport mechanism could be explained by an Arrhenius behavior at high temperatures (T > 255 K) and a broad transition with a logarithmic dependence of the activation energy with temperature for the low temperature regime (T < 255 K). Additionally, an increase in the hopping transport dimensionality from quasi-1D to quasi-3D was observed for X = 7% GO nanocomposites. The transport properties, studied after the polarization using low applied electric fields, revealed the modification of the electrical transport at low temperatures. In addition, the electrical transport of PANI-GO-X nanocomposites followed a typical ln(σ) vs E1/2 Poole-Frenkel type dependence in the presence of low applied electric fields. At low temperatures, X = 7% GO nanocomposites showed a notorious increase in the Poole-Frenkel slope at low applied electric fields with respect to pure polyaniline. The enhancement on the electric response using low applied electric fields (E ˜ 2 V/cm) could be of great interest for the development of new organic electronic devices.

  6. Transport of charge carriers through the thin base of a heterobipolar transistor under the impact of radiation

    SciTech Connect

    Puzanov, A. S. Obolenskii, S. V. Kozlov, V. A.

    2015-01-15

    The transport of electrons in heterobipolar transistors with radiation defects is studied under conditions where the characteristic sizes of defect clusters and the distances between them can be comparable or can even exceed the sizes of the device base. It is shown that, under some levels of irradiation, neutron radiation can bring about a decrease in the time of flight of hot electrons through the base, which retards the degradation of the transistor parameters.

  7. Charge transport network dynamics in molecular aggregates

    SciTech Connect

    Jackson, Nicholas E.; Chen, Lin X.; Ratner, Mark A.

    2016-07-20

    Due to the nonperiodic nature of charge transport in disordered systems, generating insight into static charge transport networks, as well as analyzing the network dynamics, can be challenging. Here, we apply time-dependent network analysis to scrutinize the charge transport networks of two representative molecular semiconductors: a rigid n-type molecule, perylenediimide, and a flexible p-type molecule, bBDT(TDPP)2. Simulations reveal the relevant timescale for local transfer integral decorrelation to be ~100 fs, which is shown to be faster than that of a crystalline morphology of the same molecule. Using a simple graph metric, global network changes are observed over timescales competitive with charge carrier lifetimes. These insights demonstrate that static charge transport networks are qualitatively inadequate, whereas average networks often overestimate network connectivity. Finally, a simple methodology for tracking dynamic charge transport properties is proposed.

  8. Charge transport network dynamics in molecular aggregates

    PubMed Central

    Jackson, Nicholas E.; Chen, Lin X.; Ratner, Mark A.

    2016-01-01

    Due to the nonperiodic nature of charge transport in disordered systems, generating insight into static charge transport networks, as well as analyzing the network dynamics, can be challenging. Here, we apply time-dependent network analysis to scrutinize the charge transport networks of two representative molecular semiconductors: a rigid n-type molecule, perylenediimide, and a flexible p-type molecule, bBDT(TDPP)2. Simulations reveal the relevant timescale for local transfer integral decorrelation to be ∼100 fs, which is shown to be faster than that of a crystalline morphology of the same molecule. Using a simple graph metric, global network changes are observed over timescales competitive with charge carrier lifetimes. These insights demonstrate that static charge transport networks are qualitatively inadequate, whereas average networks often overestimate network connectivity. Finally, a simple methodology for tracking dynamic charge transport properties is proposed. PMID:27439871

  9. Charge carrier coherence and Hall effect in organic semiconductors.

    PubMed

    Yi, H T; Gartstein, Y N; Podzorov, V

    2016-03-30

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

  10. Charge carrier coherence and Hall effect in organic semiconductors

    SciTech Connect

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-03-30

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Lastly, our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

  11. Charge carrier coherence and Hall effect in organic semiconductors

    PubMed Central

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-01-01

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor. PMID:27025354

  12. Columnar mesophases of hexabenzocoronene derivatives. II. Charge carrier mobility

    NASA Astrophysics Data System (ADS)

    Kirkpatrick, James; Marcon, Valentina; Kremer, Kurt; Nelson, Jenny; Andrienko, Denis

    2008-09-01

    Combining atomistic molecular dynamic simulations, Marcus-Hush theory description of charge transport rates, and master equation description of charge dynamics, we correlate the temperature-driven change of the mesophase structure with the change of charge carrier mobilities in columnar phases of hexabenzocoronene derivatives. The time dependence of fluctuations in transfer integrals shows that static disorder is predominant in determining charge transport characteristics. Both site energies and transfer integrals are distributed because of disorder in the molecular arrangement. It is shown that the contributions to the site energies from polarization and electrostatic effects are of opposite sign for positive charges. We look at three mesophases of hexabenzocoronene: herringbone, discotic, and columnar disordered. All results are compared to time resolved microwave conductivity data and show excellent agreement with no fitting parameters.

  13. Solid state cloaking for electrical charge carrier mobility control

    DOEpatents

    Zebarjadi, Mona; Liao, Bolin; Esfarjani, Keivan; Chen, Gang

    2015-07-07

    An electrical mobility-controlled material includes a solid state host material having a controllable Fermi energy level and electrical charge carriers with a charge carrier mobility. At least one Fermi level energy at which a peak in charge carrier mobility is to occur is prespecified for the host material. A plurality of particles are distributed in the host material, with at least one particle disposed with an effective mass and a radius that minimize scattering of the electrical charge carriers for the at least one prespecified Fermi level energy of peak charge carrier mobility. The minimized scattering of electrical charge carriers produces the peak charge carrier mobility only at the at least one prespecified Fermi level energy, set by the particle effective mass and radius, the charge carrier mobility being less than the peak charge carrier mobility at Fermi level energies other than the at least one prespecified Fermi level energy.

  14. Charge-carrier screening in single-layer graphene.

    PubMed

    Siegel, David A; Regan, William; Fedorov, Alexei V; Zettl, A; Lanzara, Alessandra

    2013-04-05

    The effect of charge-carrier screening on the transport properties of a neutral graphene sheet is studied by directly probing its electronic structure. We find that the Fermi velocity, Dirac point velocity, and overall distortion of the Dirac cone are renormalized due to the screening of the electron-electron interaction in an unusual way. We also observe an increase of the electron mean free path due to the screening of charged impurities. These observations help us to understand the basis for the transport properties of graphene, as well as the fundamental physics of these interesting electron-electron interactions at the Dirac point crossing.

  15. Dynamic Charge Carrier Trapping in Quantum Dot Field Effect Transistors.

    PubMed

    Zhang, Yingjie; Chen, Qian; Alivisatos, A Paul; Salmeron, Miquel

    2015-07-08

    Noncrystalline semiconductor materials often exhibit hysteresis in charge transport measurements whose mechanism is largely unknown. Here we study the dynamics of charge injection and transport in PbS quantum dot (QD) monolayers in a field effect transistor (FET). Using Kelvin probe force microscopy, we measured the temporal response of the QDs as the channel material in a FET following step function changes of gate bias. The measurements reveal an exponential decay of mobile carrier density with time constants of 3-5 s for holes and ∼10 s for electrons. An Ohmic behavior, with uniform carrier density, was observed along the channel during the injection and transport processes. These slow, uniform carrier trapping processes are reversible, with time constants that depend critically on the gas environment. We propose that the underlying mechanism is some reversible electrochemical process involving dissociation and diffusion of water and/or oxygen related species. These trapping processes are dynamically activated by the injected charges, in contrast with static electronic traps whose presence is independent of the charge state. Understanding and controlling these processes is important for improving the performance of electronic, optoelectronic, and memory devices based on disordered semiconductors.

  16. Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary

    SciTech Connect

    Choi, Wookjin; Miyakai, Tomoyo; Sakurai, Tsuneaki; Saeki, Akinori; Yokoyama, Masaaki; Seki, Shu

    2014-07-21

    The density of traps at semiconductor–insulator interfaces was successfully estimated using microwave dielectric loss spectroscopy with model thin-film organic field-effect transistors. The non-contact, non-destructive analysis technique is referred to as field-induced time-resolved microwave conductivity (FI-TRMC) at interfaces. Kinetic traces of FI-TRMC transients clearly distinguished the mobile charge carriers at the interfaces from the immobile charges trapped at defects, allowing both the mobility of charge carriers and the number density of trap sites to be determined at the semiconductor-insulator interfaces. The number density of defects at the interface between evaporated pentacene on a poly(methylmethacrylate) insulating layer was determined to be 10{sup 12 }cm{sup −2}, and the hole mobility was up to 6.5 cm{sup 2} V{sup −1} s{sup −1} after filling the defects with trapped carriers. The FI-TRMC at interfaces technique has the potential to provide rapid screening for the assessment of interfacial electronic states in a variety of semiconductor devices.

  17. Fractional lattice charge transport

    PubMed Central

    Flach, Sergej; Khomeriki, Ramaz

    2017-01-01

    We consider the dynamics of noninteracting quantum particles on a square lattice in the presence of a magnetic flux α and a dc electric field E oriented along the lattice diagonal. In general, the adiabatic dynamics will be characterized by Bloch oscillations in the electrical field direction and dispersive ballistic transport in the perpendicular direction. For rational values of α and a corresponding discrete set of values of E(α) vanishing gaps in the spectrum induce a fractionalization of the charge in the perpendicular direction - while left movers are still performing dispersive ballistic transport, the complementary fraction of right movers is propagating in a dispersionless relativistic manner in the opposite direction. Generalizations and the possible probing of the effect with atomic Bose-Einstein condensates and photonic networks are discussed. Zak phase of respective band associated with gap closing regime has been computed and it is found converging to π/2 value. PMID:28102302

  18. Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

    DOEpatents

    Rehak, Pavel; Gatti, Emilio

    1987-01-01

    A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.

  19. Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

    DOEpatents

    Rehak, P.; Gatti, E.

    1987-08-18

    A semiconductor charge transport device and method for making same are disclosed, characterized by providing a thin semiconductor wafer having rectifying junctions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution. 16 figs.

  20. Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages

    DOEpatents

    Rehak, P.; Gatti, E.

    1984-02-24

    A semiconductor charge transport device and method for making same, characterized by providing a thin semiconductor wafer having rectifying functions on its opposing major surfaces and including a small capacitance ohmic contact, in combination with bias voltage means and associated circuit means for applying a predetermined voltage to effectively deplete the wafer in regions thereof between the rectifying junctions and the ohmic contact. A charge transport device of the invention is usable as a drift chamber, a low capacitance detector, or a charge coupled device each constructed according to the methods of the invention for making such devices. Detectors constructed according to the principles of the invention are characterized by having significantly higher particle position indicating resolution than is attainable with prior art detectors, while at the same time requiring substantially fewer readout channels to realize such high resolution.

  1. Charge-transport model for conducting polymers

    NASA Astrophysics Data System (ADS)

    Dongmin Kang, Stephen; Jeffrey Snyder, G.

    2016-11-01

    The growing technological importance of conducting polymers makes the fundamental understanding of their charge transport extremely important for materials and process design. Various hopping and mobility edge transport mechanisms have been proposed, but their experimental verification is limited to poor conductors. Now that advanced organic and polymer semiconductors have shown high conductivity approaching that of metals, the transport mechanism should be discernible by modelling the transport like a semiconductor with a transport edge and a transport parameter s. Here we analyse the electrical conductivity and Seebeck coefficient together and determine that most polymers (except possibly PEDOT:tosylate) have s = 3 and thermally activated conductivity, whereas s = 1 and itinerant conductivity is typically found in crystalline semiconductors and metals. The different transport in polymers may result from the percolation of charge carriers from conducting ordered regions through poorly conducting disordered regions, consistent with what has been expected from structural studies.

  2. Nanofaceting as a stamp for periodic graphene charge carrier modulations

    PubMed Central

    Vondráček, M.; Kalita, D.; Kučera, M.; Fekete, L.; Kopeček, J.; Lančok, J.; Coraux, J.; Bouchiat, V.; Honolka, J.

    2016-01-01

    The exceptional electronic properties of monatomic thin graphene sheets triggered numerous original transport concepts, pushing quantum physics into the realm of device technology for electronics, optoelectronics and thermoelectrics. At the conceptual pivot point is the particular two-dimensional massless Dirac fermion character of graphene charge carriers and its volitional modification by intrinsic or extrinsic means. Here, interfaces between different electronic and structural graphene modifications promise exciting physics and functionality, in particular when fabricated with atomic precision. In this study we show that quasiperiodic modulations of doping levels can be imprinted down to the nanoscale in monolayer graphene sheets. Vicinal copper surfaces allow to alternate graphene carrier densities by several 1013 carriers per cm2 along a specific copper high-symmetry direction. The process is triggered by a self-assembled copper faceting process during high-temperature graphene chemical vapor deposition, which defines interfaces between different graphene doping levels at the atomic level. PMID:27040365

  3. Nanofaceting as a stamp for periodic graphene charge carrier modulations

    NASA Astrophysics Data System (ADS)

    Vondráček, M.; Kalita, D.; Kučera, M.; Fekete, L.; Kopeček, J.; Lančok, J.; Coraux, J.; Bouchiat, V.; Honolka, J.

    2016-04-01

    The exceptional electronic properties of monatomic thin graphene sheets triggered numerous original transport concepts, pushing quantum physics into the realm of device technology for electronics, optoelectronics and thermoelectrics. At the conceptual pivot point is the particular two-dimensional massless Dirac fermion character of graphene charge carriers and its volitional modification by intrinsic or extrinsic means. Here, interfaces between different electronic and structural graphene modifications promise exciting physics and functionality, in particular when fabricated with atomic precision. In this study we show that quasiperiodic modulations of doping levels can be imprinted down to the nanoscale in monolayer graphene sheets. Vicinal copper surfaces allow to alternate graphene carrier densities by several 1013 carriers per cm2 along a specific copper high-symmetry direction. The process is triggered by a self-assembled copper faceting process during high-temperature graphene chemical vapor deposition, which defines interfaces between different graphene doping levels at the atomic level.

  4. Organic (opto)electronic materials: understanding charge carrier dynamics

    NASA Astrophysics Data System (ADS)

    Ostroverkhova, Oksana

    2008-05-01

    There is growing interest in using organic (opto)electronic materials for applications in electronics and photonics. In particular, organic semiconductor thin films offer several advantages over traditional silicon technology, including low-cost processing, the potential for large-area flexible devices, high-efficiency light emission, and widely tunable properties through functionalization of the molecules. Over the past decade, remarkable progress in materials design and purification has been made, which led to applications of organic semiconductors in light-emitting diodes, polymer lasers, photovoltaic cells, high-speed photodetectors, organic thin-film transistors, and many others. Most of the applications envisioned for organic semiconductors rely on their conductive or photoconductive properties. However, despite remarkable progress in organic electronics and photonics, the nature of charge carrier photogeneration and transport in organic semiconductors is not completely understood and remains controversial, partly due to difficulties in assessing intrinsic properties that are often masked by impurities, grain boundaries, etc. Measurements of charge carrier dynamics at picosecond time scales after excitation reveal the intrinsic nature of mobile charge carriers before they are trapped at defect sites. In this presentation, I will review the current state of the field and summarize our recent results on photoconductivity of novel high-performance organic semiconductors (such as functionalized pentacene and anthradithiophene thin films) from picoseconds to seconds after photoexcitation. Photoluminescent properties of these novel materials will also be discussed.

  5. Biogenesis of endosome-derived transport carriers.

    PubMed

    Chi, Richard J; Harrison, Megan S; Burd, Christopher G

    2015-09-01

    Sorting of macromolecules within the endosomal system is vital for physiological control of nutrient homeostasis, cell motility, and proteostasis. Trafficking routes that export macromolecules from the endosome via vesicle and tubule transport carriers constitute plasma membrane recycling and retrograde endosome-to-Golgi pathways. Proteins of the sorting nexin family have been discovered to function at nearly every step of endosomal transport carrier biogenesis and it is becoming increasingly clear that they form the core machineries of cargo-specific transport pathways that are closely integrated with cellular physiology. Here, we summarize recent progress in elucidating the pathways that mediate the biogenesis of endosome-derived transport carriers.

  6. Charge carrier coherence and Hall effect in organic semiconductors

    DOE PAGES

    Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

    2016-03-30

    Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force actingmore » on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Lastly, our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.« less

  7. Hot Charge Carrier Transmission from Plasmonic Nanostructures.

    PubMed

    Christopher, Phillip; Moskovits, Martin

    2017-03-16

    Surface plasmons have recently been harnessed to carry out processes such as photovoltaic current generation, redox photochemistry, photocatalysis, and photodetection, all of which are enabled by separating energetic (hot) electrons and holes-processes that, previously, were the domain of semiconductor junctions. Currently, the power conversion efficiencies of systems using plasmon excitation are low. However, the very large electron/hole per photon quantum efficiencies observed for plasmonic devices fan the hope of future improvements through a deeper understanding of the processes involved and through better device engineering, especially of critical interfaces such as those between metallic and semiconducting nanophases (or adsorbed molecules). In this review, we focus on the physics and dynamics governing plasmon-derived hot charge carrier transfer across, and the electronic structure at, metal-semiconductor (molecule) interfaces, where we feel the barriers contributing to low efficiencies reside. We suggest some areas of opportunity that deserve early attention in the still-evolving field of hot carrier transmission from plasmonic nanostructures to neighboring phases. Expected final online publication date for the Annual Review of Physical Chemistry Volume 68 is April 20, 2017. Please see http://www.annualreviews.org/page/journal/pubdates for revised estimates.

  8. Charge Transport Properties in Disordered Organic Semiconductor as a Function of Charge Density: Monte Carlo Simulation

    NASA Astrophysics Data System (ADS)

    Shukri, Seyfan Kelil

    2017-01-01

    We have done Kinetic Monte Carlo (KMC) simulations to investigate the effect of charge carrier density on the electrical conductivity and carrier mobility in disordered organic semiconductors using a lattice model. The density of state (DOS) of the system are considered to be Gaussian and exponential. Our simulations reveal that the mobility of the charge carrier increases with charge carrier density for both DOSs. In contrast, the mobility of charge carriers decreases as the disorder increases. In addition the shape of the DOS has a significance effect on the charge transport properties as a function of density which are clearly seen. On the other hand, for the same distribution width and at low carrier density, the change occurred on the conductivity and mobility for a Gaussian DOS is more pronounced than that for the exponential DOS.

  9. Anomalous Charge Transport in Disordered Organic Semiconductors

    SciTech Connect

    Muniandy, S. V.; Woon, K. L.; Choo, K. Y.

    2011-03-30

    Anomalous charge carrier transport in disordered organic semiconductors is studied using fractional differential equations. The connection between index of fractional derivative and dispersion exponent is examined from the perspective of fractional Fokker-Planck equation and its link to the continuous time random walk formalism. The fractional model is used to describe the bi-scaling power-laws observed in the time-of flight photo-current transient data for two different types of organic semiconductors.

  10. Charge Transport Processes in Molecular Junctions

    NASA Astrophysics Data System (ADS)

    Smith, Christopher Eugene

    Molecular electronics (ME) has evolved into a rich area of exploration that combines the fields of chemistry, materials, electronic engineering and computational modeling to explore the physics behind electronic conduction at the molecular level. Through studying charge transport properties of single molecules and nanoscale molecular materials the field has gained the potential to bring about new avenues for the miniaturization of electrical components where quantum phenomena are utilized to achieve solid state molecular device functionality. Molecular junctions are platforms that enable these studies and consist of a single molecule or a small group of molecules directly connected to electrodes. The work presented in this thesis has built upon the current understanding of the mechanisms of charge transport in ordered junctions using self-assembled monolayer (SAM) molecular thin films. Donor and acceptor compounds were synthesized and incorporated into SAMs grown on metal substrates then the transport properties were measured with conducting probe atomic force microscopy (CP-AFM). In addition to experimentally measured current-voltage (I-V) curves, the transport properties were addressed computationally and modeled theoretically. The key objectives of this project were to 1) investigate the impact of molecular structure on hole and electron charge transport, 2) understand the nature of the charge carriers and their structure-transport properties through long (<4 nm) conjugated molecular wires, and 3) quantitatively extract interfacial properties characteristic to macroscopic junctions, such as energy level alignment and molecule-contact electronic coupling from experimental I-V curves. Here, we lay ground work for creating a more complete picture of charge transport in macroscopically ordered molecular junctions of controlled architecture, length and charge carrier. The polaronic nature of hopping transport has been predicted in long, conjugated molecular wires

  11. Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

    SciTech Connect

    Zhu, Xiaoyang

    2014-12-10

    The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering. Organic semiconductors are emerging as viable materials for low-cost electronics and optoelectronics, such as organic photovoltaics (OPV), organic field effect transistors (OFETs), and organic light emitting diodes (OLEDs). Despite extensive studies spanning many decades, a clear understanding of the nature of charge carriers in organic semiconductors is still lacking. It is generally appreciated that polaron formation and charge carrier trapping are two hallmarks associated with electrical transport in organic semiconductors; the former results from the low dielectric constants and weak intermolecular electronic overlap while the latter can be attributed to the prevalence of structural disorder. These properties have lead to the common observation of low charge carrier mobilities, e.g., in the range of 10-5 - 10-3 cm2/Vs, particularly at low carrier concentrations. However, there is also growing evidence that charge carrier mobility approaching those of inorganic semiconductors and metals can exist in some crystalline organic semiconductors, such as pentacene, tetracene and rubrene. A particularly striking example is single crystal rubrene (Figure 1), in which hole mobilities well above 10 cm2/Vs have been observed in OFETs operating at room temperature. Temperature dependent transport and spectroscopic measurements both revealed evidence of free carriers in rubrene. Outstanding questions are: what are the structural features and physical properties that make rubrene so unique? How do we establish fundamental design principles for the development of other organic semiconductors of high mobility? These questions are critically important but not comprehensive, as the nature of

  12. Organic Charge Carriers for Perovskite Solar Cells.

    PubMed

    Völker, Sebastian F; Collavini, Silvia; Delgado, Juan Luis

    2015-09-21

    The photovoltaic field is currently experiencing the "perovskite revolution". These materials have been known for decades, but only recently have they been applied in solid-state solar cells to obtain outstanding power conversion efficiencies. Given that the variety of perovskites used so far is limited, a lot of attention has been devoted to the development of suitable organic charge-transport materials to improve device performance. In this article, we will focus on the most promising materials able to transport electrons or holes from a structural point of view. Thereby, we focus on organic materials owing to their ease of preparation and manipulation, and this is nicely combined with the potential tuning of their properties through chemical synthesis.

  13. NREL Studies Carrier Separation and Transport in Perovskite Solar Cells

    SciTech Connect

    2016-01-01

    NREL scientists studied charge separation and transport in perovskite solar cells by determining the junction structure across the solar device using the nanoelectrical characterization technique of Kelvin probe force microscopy. The distribution of electrical potential across both planar and porous devices demonstrates a p-n junction structure at the interface between titanium dioxide and perovskite. In addition, minority-carrier transport within the devices operates under diffusion/drift. Clarifying the fundamental junction structure provides significant guidance for future research and development. This NREL study points to the fact that improving carrier mobility is a critical factor for continued efficiency gains in perovskite solar cells.

  14. Molecular length dictates the nature of charge carriers in single-molecule junctions of oxidized oligothiophenes.

    PubMed

    Dell, Emma J; Capozzi, Brian; Xia, Jianlong; Venkataraman, Latha; Campos, Luis M

    2015-03-01

    To develop advanced materials for electronic devices, it is of utmost importance to design organic building blocks with tunable functionality and to study their properties at the molecular level. For organic electronic and photovoltaic applications, the ability to vary the nature of charge carriers and so create either electron donors or acceptors is critical. Here we demonstrate that charge carriers in single-molecule junctions can be tuned within a family of molecules that contain electron-deficient thiophene-1,1-dioxide (TDO) building blocks. Oligomers of TDO were designed to increase electron affinity and maintain delocalized frontier orbitals while significantly decreasing the transport gap. Through thermopower measurements we show that the dominant charge carriers change from holes to electrons as the number of TDO units is increased. This results in a unique system in which the charge carrier depends on the backbone length, and provides a new means to tune p- and n-type transport in organic materials.

  15. Dynamics of charge carriers on hexagonal nanoribbons with vacancy defects

    NASA Astrophysics Data System (ADS)

    Ferreira da Cunha, Wiliam; de Oliveira Neto, Pedro Henrique; Terai, Akira; Magela e Silva, Geraldo

    2016-07-01

    We develop a general model to investigate the dynamics of charge carriers in vacancy endowed honeycomb two-dimensional nanolattices. As a fundamental application, results concerning the influence of vacancies placed on different sites of semiconducting armchair graphene nanoribbons (AGNR) over the transport of polarons are presented. It is observed that the positioning of vacancies plays a major role over the scattering of the charge carriers, in the sense that their overall mobility is determined by where the defect is allocated. By considering different structural configurations of the system, the arising polaron can either move freely or be reflected. Therefore, our work provides a phenomenological understanding of the underlying mechanism responsible for the change of conductivity experienced by systems in which structural defects are present, a fact that has been reported for different nanostructures of the same symmetry. Because vacancies are one of the most common kinds of defects and are, in practice, unavoidable, the kind of description proposed in the present paper is crucial to correctly address transport and electronic properties in more realistic electronic devices based on two-dimensional nanolattices.

  16. Charge transport in organic semiconductors.

    PubMed

    Bässler, Heinz; Köhler, Anna

    2012-01-01

    Modern optoelectronic devices, such as light-emitting diodes, field-effect transistors and organic solar cells require well controlled motion of charges for their efficient operation. The understanding of the processes that determine charge transport is therefore of paramount importance for designing materials with improved structure-property relationships. Before discussing different regimes of charge transport in organic semiconductors, we present a brief introduction into the conceptual framework in which we interpret the relevant photophysical processes. That is, we compare a molecular picture of electronic excitations against the Su-Schrieffer-Heeger semiconductor band model. After a brief description of experimental techniques needed to measure charge mobilities, we then elaborate on the parameters controlling charge transport in technologically relevant materials. Thus, we consider the influences of electronic coupling between molecular units, disorder, polaronic effects and space charge. A particular focus is given to the recent progress made in understanding charge transport on short time scales and short length scales. The mechanism for charge injection is briefly addressed towards the end of this chapter.

  17. Charge transport in electrically doped amorphous organic semiconductors.

    PubMed

    Yoo, Seung-Jun; Kim, Jang-Joo

    2015-06-01

    This article reviews recent progress on charge generation by doping and its influence on the carrier mobility in organic semiconductors (OSs). The doping induced charge generation efficiency is generally low in OSs which was explained by the integer charge transfer model and the hybrid charge transfer model. The ionized dopants formed by charge transfer between hosts and dopants can act as Coulomb traps for mobile charges, and the presence of Coulomb traps in OSs broadens the density of states (DOS) in doped organic films. The Coulomb traps strongly reduce the carrier hopping rate and thereby change the carrier mobility, which was confirmed by experiments in recent years. In order to fully understand the doping mechanism in OSs, further quantitative and systematic analyses of charge transport characteristics must be accomplished.

  18. Charging up Transportation.

    ERIC Educational Resources Information Center

    Vail, Kathleen R.

    1994-01-01

    In Antelope Valley, California, a regional transportation consortium, cooperatively run by six adjacent school districts, is operating an electric-powered school bus as a pilot project. Although the prototype bus cost nearly six times more than a traditional school bus, lower operating and maintenance expenses and safety factors appeal to many…

  19. Modelling of the charge carrier mobility in disordered linear polymer materials.

    PubMed

    Toman, Petr; Menšík, Miroslav; Bartkowiak, Wojciech; Pfleger, Jiří

    2017-03-15

    We introduced a molecular-scale description of disordered on-chain charge carrier states into a theoretical model of the charge carrier transport in polymer semiconductors. The presented model combines the quantum mechanical approach with a semi-classical solution of the inter-chain charge hopping. Our model takes into account the significant local anisotropy of the charge carrier mobility present in linear conjugated polymers. Contrary to the models based on the effective medium approximation, our approach allowed avoiding artefacts in the calculated concentration dependence of the mobility originated in its problematic configurational averaging. Monte Carlo numerical calculations show that, depending on the degree of the energetic and structural disorder, the charge carrier mobility increases significantly with increasing charge concentration due to trap filling. At high charge carrier concentrations, the effect of the energetic disorder disappears and the mobility decreases slightly due to the lower density of unoccupied states available for the hopping transport. It could explain the experimentally observed mobility degradation in organic field-effect transistors at high gate voltage.

  20. Harnessing Solute Carrier Transporters for Precision Oncology.

    PubMed

    Nyquist, Michael D; Prasad, Bhagwat; Mostaghel, Elahe A

    2017-03-28

    Solute Carrier (SLC) transporters are a large superfamily of transmembrane carriers involved in the regulated transport of metabolites, nutrients, ions and drugs across cellular membranes. A subset of these solute carriers play a significant role in the cellular uptake of many cancer therapeutics, ranging from chemotherapeutics such as antimetabolites, topoisomerase inhibitors, platinum-based drugs and taxanes to targeted therapies such as tyrosine kinase inhibitors. SLC transporters are co-expressed in groups and patterns across normal tissues, suggesting they may comprise a coordinated regulatory circuit serving to mediate normal tissue functions. In cancer however, there are dramatic changes in expression patterns of SLC transporters. This frequently serves to feed the increased metabolic demands of the tumor cell for amino acids, nucleotides and other metabolites, but also presents a therapeutic opportunity, as increased transporter expression may serve to increase intracellular concentrations of substrate drugs. In this review, we examine the regulation of drug transporters in cancer and how this impacts therapy response, and discuss novel approaches to targeting therapies to specific cancers via tumor-specific aberrations in transporter expression. We propose that among the oncogenic changes in SLC transporter expression there exist emergent vulnerabilities that can be exploited therapeutically, extending the application of precision medicine from tumor-specific drug targets to tumor-specific determinants of drug uptake.

  1. Anisotropic charged impurity-limited carrier mobility in monolayer phosphorene

    SciTech Connect

    Ong, Zhun-Yong; Zhang, Gang; Zhang, Yong Wei

    2014-12-07

    The room temperature carrier mobility in atomically thin 2D materials is usually far below the intrinsic limit imposed by phonon scattering as a result of scattering by remote charged impurities in its environment. We simulate the charged impurity-limited carrier mobility μ in bare and encapsulated monolayer phosphorene. We find a significant temperature dependence in the carrier mobilities (μ ∝ T{sup −γ}) that results from the temperature variability of the charge screening and varies with the crystal orientation. The anisotropy in the effective mass leads to an anisotropic carrier mobility, with the mobility in the armchair direction about one order of magnitude larger than in the zigzag direction. In particular, this mobility anisotropy is enhanced at low temperatures and high carrier densities. Under encapsulation with a high-κ overlayer, the mobility increases by up to an order of magnitude although its temperature dependence and its anisotropy are reduced.

  2. On the role of local charge carrier mobility in the charge separation mechanism of organic photovoltaics.

    PubMed

    Yoshikawa, Saya; Saeki, Akinori; Saito, Masahiko; Osaka, Itaru; Seki, Shu

    2015-07-21

    Although the charge separation (CS) and transport processes that compete with geminate and non-geminate recombination are commonly regarded as the governing factors of organic photovoltaic (OPV) efficiency, the details of the CS mechanism remain largely unexplored. Here we provide a systematic investigation on the role of local charge carrier mobility in bulk heterojunction films of ten different low-bandgap polymers and polythiophene analogues blended with methanofullerene (PCBM). By correlating with the OPV performances, we demonstrated that the local mobility of the blend measured by time-resolved microwave conductivity is more important for the OPV output than those of the pure polymers. Furthermore, the results revealed two separate trends for crystalline and semi-crystalline polymers. This work offers guidance in the design of high-performance organic solar cells.

  3. 47 CFR 69.153 - Presubscribed interexchange carrier charge (PICC).

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... (PICC). 69.153 Section 69.153 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON... § 69.153 Presubscribed interexchange carrier charge (PICC). (a) A charge expressed in dollars and cents... maximum of $4.31 per line per month. In the event the ceilings on the PICC prevent the PICC...

  4. 41 CFR 302-7.103 - How are the charges calculated when a carrier charges a minimum weight, but the actual weight of...

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ...-TRANSPORTATION AND TEMPORARY STORAGE OF HOUSEHOLD GOODS AND PROFESSIONAL BOOKS, PAPERS, AND EQUIPMENT (PBP&E... calculated when a carrier charges a minimum weight, but the actual weight of HHG, PBP&E and temporary storage... actual weight of HHG, PBP&E and temporary storage is less than the minimum weight charged? Charges...

  5. 41 CFR 302-7.103 - How are the charges calculated when a carrier charges a minimum weight, but the actual weight of...

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ...-TRANSPORTATION AND TEMPORARY STORAGE OF HOUSEHOLD GOODS AND PROFESSIONAL BOOKS, PAPERS, AND EQUIPMENT (PBP&E... calculated when a carrier charges a minimum weight, but the actual weight of HHG, PBP&E and temporary storage... actual weight of HHG, PBP&E and temporary storage is less than the minimum weight charged? Charges...

  6. 41 CFR 302-7.103 - How are the charges calculated when a carrier charges a minimum weight, but the actual weight of...

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ...-TRANSPORTATION AND TEMPORARY STORAGE OF HOUSEHOLD GOODS AND PROFESSIONAL BOOKS, PAPERS, AND EQUIPMENT (PBP&E... calculated when a carrier charges a minimum weight, but the actual weight of HHG, PBP&E and temporary storage... actual weight of HHG, PBP&E and temporary storage is less than the minimum weight charged? Charges...

  7. Charge transport through inhomogeneous polymeric materials

    NASA Astrophysics Data System (ADS)

    Vakhshouri, Kiarash

    The generation of unique properties through mixing of organic semiconductors has enabled improved performance and novel functionalities in organic electronic devices. In organic light emitting diodes (OLEDs), isolated phases of a second material within the photoactive layer can act as recombination centers, enhancing the overall device performance. Mixing of flexible polymer semiconductors with high-mobility small organic molecules can yield high-performance flexible thin film transistors. Solution-processed, bulk-heterojunction (BHJ), thin-film organic solar cells rely on the self-assembly of polymer/fullerene donor/acceptor mixtures to create the necessary morphology with a high interfacial area for efficient photocurrent generation. Efficient conversion of absorbed photons into photocurrent requires sufficiently intimate mixing of the donor and acceptor phases such that photogenerated excitons can easily find an interface, as well as a sufficiently large thermodynamic driving force for charge separation at the interface. At the same time, efficient transport of separated charges towards the electrodes requires a certain degree of phase segregation between the two materials, to enable ordered molecular packing within each phase and also minimize interfacial recombination. Despite the importance of creating inhomogeneous mixtures of organic semiconductors and the tremendous recent advances in the performance of the aforementioned devices, it remains a challenge to fully describe the optoelectronic properties of organic semiconductor mixtures and understand the effects of structural and morphological parameters on charge transport. Recently, it has been shown that highly regioregular poly(3-hexylthiophene) (RR-P3HT) and poly[2,5-bis(3-hexadecylthiophen-2-yl)thieno(3,2-b)thiophene] (PBTTT) are promising materials for organic electronic applications due to the relatively high charge carrier mobility, high solubility in different organic solvents and acceptable film

  8. Slower carriers limit charge generation in organic semiconductor light-harvesting systems

    PubMed Central

    Stolterfoht, Martin; Armin, Ardalan; Shoaee, Safa; Kassal, Ivan; Burn, Paul; Meredith, Paul

    2016-01-01

    Blends of electron-donating and -accepting organic semiconductors are widely used as photoactive materials in next-generation solar cells and photodetectors. The yield of free charges in these systems is often determined by the separation of interfacial electron–hole pairs, which is expected to depend on the ability of the faster carrier to escape the Coulomb potential. Here we show, by measuring geminate and non-geminate losses and key transport parameters in a series of bulk-heterojunction solar cells, that the charge-generation yield increases with increasing slower carrier mobility. This is in direct contrast with the well-established Braun model where the dissociation rate is proportional to the mobility sum, and recent models that underscore the importance of fullerene aggregation for coherent electron propagation. The behaviour is attributed to the restriction of opposite charges to different phases, and to an entropic contribution that favours the joint separation of both charge carriers. PMID:27324720

  9. Charge-carrier dynamics in hybrid metal halide perovskites (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Milot, Rebecca L.; Rehman, Waqaas; Eperon, Giles E.; Snaith, Henry J.; Johnston, Michael B.; Herz, Laura M.

    2016-09-01

    Hybrid metal halide perovskites are attractive components for many optoelectronic applications due to a combination of their superior charge transport properties and relative ease of fabrication. A complete understanding of the nature of charge transport in these materials is therefore essential for current and future device development. We have evaluated two systems - the standard perovskite methylammonium lead triiodide (CH3NH3PbI3) and a series of mixed-iodide/bromide formamidinium lead perovskites - in an effort to determine what effect structural and chemical composition have on optoelectronic properties including mobility, charge-carrier recombination dynamics, and charge-carrier diffusion length. The photoconductivity in thin films of CH3NH3PbI3was investigated from 8 K to 370 K across three structural phases [1]. While the monomolecular charge-carrier recombination rate was found to increase with rising temperature indicating a mechanism dominated by ionized impurity mediated recombination, the bimolecular rate constant decreased with rising temperature as charge-carrier mobility declined. The Auger rate constant was highly phase specific, suggesting a strong dependence on electronic band structure. For the mixed-halide formamidinuim lead bromide-iodide perovskites, HC(NH2)2Pb(BryI1-y)3, bimolecular and Auger charge-carrier recombination rate constants strongly correlated with bromide content, which indicated a link with electronic structure [2]. Although HC(NH2)2PbBr3 and HC(NH2)2PbI3 exhibited high charge-carrier mobilities and diffusion lengths exceeding 1 μm, mobilities for mixed Br/I perovskites were all lower as a result of crystalline phase disorder.

  10. The solute carrier 6 family of transporters

    PubMed Central

    Bröer, Stefan; Gether, Ulrik

    2012-01-01

    The solute carrier 6 (SLC6) family of the human genome comprises transporters for neurotransmitters, amino acids, osmolytes and energy metabolites. Members of this family play critical roles in neurotransmission, cellular and whole body homeostasis. Malfunction or altered expression of these transporters is associated with a variety of diseases. Pharmacological inhibition of the neurotransmitter transporters in this family is an important strategy in the management of neurological and psychiatric disorders. This review provides an overview of the biochemical and pharmacological properties of the SLC6 family transporters. LINKED ARTICLES BJP published a themed section on Transporters in 2011. To view articles in this section visit http://onlinelibrary.wiley.com/doi/10.1111/bph.2011.164.issue-7/issuetoc PMID:22519513

  11. Charge carrier transport and lifetimes in n-type and p-type phosphorene as 2D device active materials: an ab initio study.

    PubMed

    Tea, E; Hin, C

    2016-08-10

    In this work, we provide a detailed analysis of phosphorene's performance as an n-type and p-type active material. This study is based on first principles calculations of the phosphorene electronic structure, and the resulting electron and hole scattering rates and lifetimes. Emphasis is put on extreme regimes commonly found in semiconductor devices, i.e. high electric fields and heavy doping, where impact ionization and Auger recombination can occur. We found that electron-initiated impact ionization is weaker than the hole-initiated process, when compared to carrier-phonon interaction rates, suggesting resilience to impact ionization initiated breakdown. Moreover, calculated minority electron lifetimes are limited by radiative recombination only, not by Auger processes, suggesting that phosphorene could achieve good quantum efficiencies in optoelectronic devices. The provided scattering rates and lifetimes are critical input data for the modeling and understanding of phosphorene-based device physics.

  12. Charge transport mechanism in lead oxide revealed by CELIV technique

    PubMed Central

    Semeniuk, O.; Juska, G.; Oelerich, J.-O.; Wiemer, M.; Baranovskii, S. D.; Reznik, A.

    2016-01-01

    Although polycrystalline lead oxide (PbO) belongs to the most promising photoconductors for optoelectronic and large area detectors applications, the charge transport mechanism in this material still remains unclear. Combining the conventional time-of-flight and the photo-generated charge extraction by linear increasing voltage (photo-CELIV) techniques, we investigate the transport of holes which are shown to be the faster carriers in poly-PbO. Experimentally measured temperature and electric field dependences of the hole mobility suggest a highly dispersive transport. In order to analyze the transport features quantitatively, the theory of the photo-CELIV is extended to account for the dispersive nature of charge transport. While in other materials with dispersive transport the amount of dispersion usually depends on temperature, this is not the case in poly-PbO, which evidences that dispersive transport is caused by the spatial inhomogeneity of the material and not by the energy disorder. PMID:27628537

  13. Photogeneration of charge carriers in titanium oxides

    NASA Astrophysics Data System (ADS)

    Itoh, Chihiro; Iwahashi, Kuniaki; Kan'no, Ken-ichi

    2002-05-01

    We have measured action spectra of the photoconductivity of rutile crystal at ˜4 K. The photoconductivity spectrum shows a keen rise at 3.0 eV and shows a peak at 3.2 eV and a shoulder around 3.7 eV. The threshold energy of the photoconductivity excitation well agrees with the onset of the fundamental optical absorption. This result indicates that the carriers contributing to the photoconductivity are generated by the fundamental excitation of the crystal. We have found that the photoconductivity shows remarkable field dependence. Below 5 V/mm, the photoconductivity was almost field independent. On the other hand, increasing the field strength in the range from 5 to 25 V/mm strongly enhanced the photoconductivity and varied the shape of the action spectrum. The origin of the field dependence is discussed.

  14. Comprehensive approach to intrinsic charge carrier mobility in conjugated organic molecules, macromolecules, and supramolecular architectures.

    PubMed

    Saeki, Akinori; Koizumi, Yoshiko; Aida, Takuzo; Seki, Shu

    2012-08-21

    Si-based inorganic electronics have long dominated the semiconductor industry. However, in recent years conjugated polymers have attracted increasing attention because such systems are flexible and offer the potential for low-cost, large-area production via roll-to-roll processing. The state-of-the-art organic conjugated molecular crystals can exhibit charge carrier mobilities (μ) that nearly match or even exceed that of amorphous silicon (1-10 cm(2) V(-1) s(-1)). The mean free path of the charge carriers estimated from these mobilities corresponds to the typical intersite (intermolecular) hopping distances in conjugated organic materials, which strongly suggests that the conduction model for the electronic band structure only applies to μ > 1 cm(2) V(-1) s(-1) for the translational motion of the charge carriers. However, to analyze the transport mechanism in organic electronics, researchers conventionally use a disorder formalism, where μ is usually less than 1 cm(2) V(-1) s(-1) and dominated by impurities, disorders, or defects that disturb the long-range translational motion. In this Account, we discuss the relationship between the alternating-current and direct-current mobilities of charge carriers, using time-resolved microwave conductivity (TRMC) and other techniques including field-effect transistor, time-of-flight, and space-charge limited current. TRMC measures the nanometer-scale mobility of charge carriers under an oscillating microwave electric field with no contact between the semiconductors and the metals. This separation allows us to evaluate the intrinsic charge carrier mobility with minimal trapping effects. We review a wide variety of organic electronics in terms of their charge carrier mobilities, and we describe recent studies of macromolecules, molecular crystals, and supramolecular architecture. For example, a rigid poly(phenylene-co-ethynylene) included in permethylated cyclodextrin shows a high intramolecular hole mobility of 0.5 cm(2) V

  15. Combined charge carrier transport and photoelectrochemical characterization of BiVO4 single crystals: intrinsic behavior of a complex metal oxide.

    PubMed

    Rettie, Alexander J E; Lee, Heung Chan; Marshall, Luke G; Lin, Jung-Fu; Capan, Cigdem; Lindemuth, Jeffrey; McCloy, John S; Zhou, Jianshi; Bard, Allen J; Mullins, C Buddie

    2013-07-31

    Bismuth vanadate (BiVO4) is a promising photoelectrode material for the oxidation of water, but fundamental studies of this material are lacking. To address this, we report electrical and photoelectrochemical (PEC) properties of BiVO4 single crystals (undoped, 0.6% Mo, and 0.3% W:BiVO4) grown using the floating zone technique. We demonstrate that a small polaron hopping conduction mechanism dominates from 250 to 400 K, undergoing a transition to a variable-range hopping mechanism at lower temperatures. An anisotropy ratio of ~3 was observed along the c axis, attributed to the layered structure of BiVO4. Measurements of the ac field Hall effect yielded an electron mobility of ~0.2 cm(2) V(-1) s(-1) for Mo and W:BiVO4 at 300 K. By application of the Gärtner model, a hole diffusion length of ~100 nm was estimated. As a result of low carrier mobility, attempts to measure the dc Hall effect were unsuccessful. Analyses of the Raman spectra showed that Mo and W substituted for V and acted as donor impurities. Mott-Schottky analysis of electrodes with the (001) face exposed yielded a flat band potential of 0.03-0.08 V versus the reversible H2 electrode, while incident photon conversion efficiency tests showed that the dark coloration of the doped single crystals did not result in additional photocurrent. Comparison of these intrinsic properties to those of other metal oxides for PEC applications gives valuable insight into this material as a photoanode.

  16. 47 CFR 69.154 - Per-minute carrier common line charge.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 47 Telecommunication 3 2010-10-01 2010-10-01 false Per-minute carrier common line charge. 69.154 Section 69.154 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES... carrier common line charge. (a) Local exchange carriers may recover a per-minute carrier common...

  17. Charge Transport in Silicon Nanomembranes

    NASA Astrophysics Data System (ADS)

    Lagally, Max G.

    2010-03-01

    Charge transport in very thin semiconductor sheets, ribbons, or nanowires is dominated by surface and interface effects as a consequence of the absence of an extended bulk. In silicon, a model system for exploring these effects, factors can include interface states and fixed oxide charges if the Si nanomembrane is oxidized, surface states in chemically modified surfaces, reconstruction if the surface is clean, or a combination of these factors if the surfaces are not equivalent (e.g., one oxidized, the other clean). Additionally, in membranes or wires thin enough that quantum size effects are observable, surface roughness may influence conduction. For conventionally doped Si, effects become noticeable at nanomembrane thicknesses below ˜200 nm (depending on doping). We describe experiments on a platform based on (001) oriented silicon-on-insulator (SOI), using van der Pauw, Hall effect, and I-V measurements, along with scanning tunneling microscopy and diffraction, and theoretical analysis of several situations that shed light on the interplay of these factors. Measurements are compared on oxidixed membranes, clean and chemically modified surfaces on membranes, and attached and freestanding nanowires with well-defined surfaces, patterned from SOI. Most importantly, large changes in conductivity are possible with small changes in surface condition, making nanomembranes (well defined in surface orientation, thickness, and surface quality) an ideal vehicle for establishing a framework for understanding charge transport in nanostructured semiconductors. With W. Peng, S. Scott, F. Chen, J. Endres, I, Knezevic, D. Savage, M. Eriksson, C.-H. Lee, C. Ritz, M.-H. Huang, M. Ziwisky, and R. Blise [4pt] [1] P.P. Zhang et al., Nature 439 703 2006 [0pt] [2] S. Scott et al., ACS Nano 3 1683 2009 [0pt] [3] C-H. Lee et al., submitted

  18. 47 CFR 36.381 - Carrier access charge billing and collecting expense.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 47 Telecommunication 2 2010-10-01 2010-10-01 false Carrier access charge billing and collecting... Operating Expenses and Taxes Customer Operations Expenses § 36.381 Carrier access charge billing and... billing and collecting of access charges to interexchange carriers. (b) Of access charges other than...

  19. 47 CFR 36.381 - Carrier access charge billing and collecting expense.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 47 Telecommunication 2 2011-10-01 2011-10-01 false Carrier access charge billing and collecting... Operating Expenses and Taxes Customer Operations Expenses § 36.381 Carrier access charge billing and... billing and collecting of access charges to interexchange carriers. (b) Of access charges other than...

  20. Carrier transport in magnesium diboride: Role of nano-inclusions

    NASA Astrophysics Data System (ADS)

    Awasthi, A. M.; Bhardwaj, S.; Awana, V. P. S.; Figini Albisetti, A.; Giunchi, G.; Narlikar, A. V.

    2013-09-01

    Anisotropic-gap and two-band effects smear out the superconducting transition (Tc) in literature reported thermal conductivity of MgB2, where large electronic contributions also suppress anomaly-manifestation in their negligible phononic-parts. Present thermal transport results on scarcely explored specimens featuring nano-inclusions exhibit a small but clear Tc-signature, traced to relatively appreciable phononic conduction, and its dominant electronic-scattering. The self-formed MgO as extended defects strongly scatter the charge carriers and minutely the phonons with their longer-mean-free-path near Tc. Conversely, near room temperature, the shorter-dominant-wavelength phonon's transport is hugely affected by these nanoparticles, undergoing ballistic to diffusive crossover and eventually entering the Ioffe-Regel mobility threshold regime.

  1. Charge Carrier Hopping Dynamics in Homogeneously Broadened PbS Quantum Dot Solids.

    PubMed

    Gilmore, Rachel H; Lee, Elizabeth M Y; Weidman, Mark C; Willard, Adam P; Tisdale, William A

    2017-02-08

    Energetic disorder in quantum dot solids adversely impacts charge carrier transport in quantum dot solar cells and electronic devices. Here, we use ultrafast transient absorption spectroscopy to show that homogeneously broadened PbS quantum dot arrays (σhom(2):σinh(2) > 19:1, σinh/kBT < 0.4) can be realized if quantum dot batches are sufficiently monodisperse (δ ≲ 3.3%). The homogeneous line width is found to be an inverse function of quantum dot size, monotonically increasing from ∼25 meV for the largest quantum dots (5.8 nm diameter/0.92 eV energy) to ∼55 meV for the smallest (4.1 nm/1.3 eV energy). Furthermore, we show that intrinsic charge carrier hopping rates are faster for smaller quantum dots. This finding is the opposite of the mobility trend commonly observed in device measurements but is consistent with theoretical predictions. Fitting our data to a kinetic Monte Carlo model, we extract charge carrier hopping times ranging from 80 ps for the smallest quantum dots to over 1 ns for the largest, with the same ethanethiol ligand treatment. Additionally, we make the surprising observation that, in slightly polydisperse (δ ≲ 4%) quantum dot solids, structural disorder has a greater impact than energetic disorder in inhibiting charge carrier transport. These findings emphasize how small improvements in batch size dispersity can have a dramatic impact on intrinsic charge carrier hopping behavior and will stimulate further improvements in quantum dot device performance.

  2. Monte Carlo simulations of charge transport in heterogeneous organic semiconductors

    NASA Astrophysics Data System (ADS)

    Aung, Pyie Phyo; Khanal, Kiran; Luettmer-Strathmann, Jutta

    2015-03-01

    The efficiency of organic solar cells depends on the morphology and electronic properties of the active layer. Research teams have been experimenting with different conducting materials to achieve more efficient solar panels. In this work, we perform Monte Carlo simulations to study charge transport in heterogeneous materials. We have developed a coarse-grained lattice model of polymeric photovoltaics and use it to generate active layers with ordered and disordered regions. We determine carrier mobilities for a range of conditions to investigate the effect of the morphology on charge transport.

  3. Electrostatic Charge Carrier Injection into the Charge-Ordered Organic Material α-(BEDT-TTF)2I3

    NASA Astrophysics Data System (ADS)

    Kimata, Motoi; Ishihara, Takuma; Tajima, Hiroyuki

    2012-07-01

    We have fabricated a field effect transistor structure using the charge-ordered (CO) organic material α-(BEDT-TTF)2I3 to investigate the effects of electrostatic carrier injection. We have observed both n-type and bipolar behaviors in the CO state, whereas, previously, only n-type characteristics were reported. The present results indicate that the transfer characteristics for a negative gate voltage, i.e., hole transport characteristics, are highly dependent on the interface conditions between α-(BEDT-TTF)2I3 and the electrodes and/or gate insulator. In addition, the activation energy of the CO state is essentially independent of VSG. This result suggests the robustness of the CO state to electrostatic charge carrier injection.

  4. Charge transport in nanoscale junctions.

    PubMed

    Albrecht, Tim; Kornyshev, Alexei; Bjørnholm, Thomas

    2008-09-03

    Understanding the fundamentals of nanoscale charge transfer is pivotal for designing future nano-electronic devices. Such devices could be based on individual or groups of molecular bridges, nanotubes, nanoparticles, biomolecules and other 'active' components, mimicking wire, diode and transistor functions. These have operated in various environments including vacuum, air and condensed matter, in two- or three-electrode configurations, at ultra-low and room temperatures. Interest in charge transport in ultra-small device components has a long history and can be dated back to Aviram and Ratner's letter in 1974 (Chem. Phys. Lett. 29 277-83). So why is there a necessity for a special issue on this subject? The area has reached some degree of maturity, and even subtle geometric effects in the nanojunction and noise features can now be resolved and rationalized based on existing theoretical concepts. One purpose of this special issue is thus to showcase various aspects of nanoscale and single-molecule charge transport from experimental and theoretical perspectives. The main principles have 'crystallized' in our minds, but there is still a long way to go before true single-molecule electronics can be implemented. Major obstacles include the stability of electronic nanojunctions, reliable operation at room temperature, speed of operation and, last but not least, integration into large networks. A gradual transition from traditional silicon-based electronics to devices involving a single (or a few) molecule(s) therefore appears to be more viable from technologic and economic perspectives than a 'quantum leap'. As research in this area progresses, new applications emerge, e.g. with a view to characterizing interfacial charge transfer at the single-molecule level in general. For example, electrochemical experiments with individual enzyme molecules demonstrate that catalytic processes can be studied with nanometre resolution, offering a route towards optimizing biosensors at

  5. Modification of electrostatic charge on inhaled carrier lactose particles by addition of fine particles.

    PubMed

    Bennett, F S; Carter, P A; Rowley, G; Dandiker, Y

    1999-01-01

    Triboelectrification affects particle adhesion and agglomeration and hence the formulation, manufacture, and use of dry powder inhaler (DPI) devices. Electrostatic charge measurement of two component mixes of spray-dried or crystalline lactose fine particles (< 10 microns) 0, 5, 10, 15, 20, and 30% w/w with spray-dried or crystalline lactose 63-90 microns, respectively, has been undertaken using a system incorporating pneumatic transport of the mixed powders to a stainless steel cyclone charging device. The magnitude of charge on the mixes was shown to decrease with increased fine particle content, and there was no significant difference in charge for each concentration between spray-dried and crystalline lactose. Both the variation of charge and powder adhesion to the cyclone surface increased with increase in fine particle content. The proportion of fine particles in carrier systems in DPIs may thus have an important role where triboelectrification is involved.

  6. Charge transport in single crystal organic semiconductors

    NASA Astrophysics Data System (ADS)

    Xie, Wei

    high-quality single crystals and exhibit large ambipolar mobilities. Nevertheless, a gap remains between the theory-predicted properties and this preliminary result, which itself is another fundamental challenge. This is further addressed by appropriate device optimization, and in particular, contact engineering approach to improve the charge injection efficiencies. The outcome is not only the achievement of new record ambipolar mobilities in one of the derivatives, namely, 4.8 cm2V-1s-1 for holes and 4.2 cm2V-1s-1 for electrons, but also provides a comprehensive and rational pathway towards the realization of high-performance organic semiconductors. Efforts to achieve high mobility in other organic single crystals are also presented. The second challenge is tuning the transition of electronic ground states, i.e., semiconducting, metallic and superconducting, in organic single crystals. Despite an active research area since four decades ago, we aim to employ the electrostatic approach instead of chemical doping for reversible and systematic control of charge densities within the same crystal. The key material in this study is the high-capacitance electrolyte, such as ionic liquids (ILs), whose specific capacitance reaches ~ μF/cm2, thus allowing accumulation of charge carrier above 1013 cm-2 when novel transport phenomena, such as insulator-metal transition and superconductivity, are likely to occur. This thesis addresses the electrical characterization, device physics and transport physics in electrolyte-gated single crystals, in the device architecture known as the electrical double layer transistor (EDLT). A detailed characterization scheme is first demonstrated for accurate determination of several key parameters, e.g., carrier mobility and charge density, in organic EDLTs. Further studies, combining both experiments and theories, are devoted to understanding the unusual charge density dependent channel conductivity and gate-to-channel capacitance behaviors. In

  7. Spectroscopy of Charge Carriers and Traps in Field-Doped Organic Semiconductors

    SciTech Connect

    Zhu, Xiaoyang; Frisbie, C Daniel

    2012-08-13

    This research project aims to achieve quantitative and molecular level understanding of charge carriers and traps in field-doped organic semiconductors via in situ optical absorption spectroscopy, in conjunction with time-resolved electrical measurements. During the funding period, we have made major progress in three general areas: (1) probed charge injection at the interface between a polymeric semiconductor and a polymer electrolyte dielectric and developed a thermodynamic model to quantitatively describe the transition from electrostatic to electrochemical doping; (2) developed vibrational Stark effect to probe electric field at buried organic semiconductor interfaces; (3) used displacement current measurement (DCM) to study charge transport at organic/dielectric interfaces and charge injection at metal/organic interfaces.

  8. Niosomal carriers enhance oral bioavailability of carvedilol: effects of bile salt-enriched vesicles and carrier surface charge.

    PubMed

    Arzani, Gelareh; Haeri, Azadeh; Daeihamed, Marjan; Bakhtiari-Kaboutaraki, Hamid; Dadashzadeh, Simin

    2015-01-01

    Carvedilol (CRV) is an antihypertensive drug with both alpha and beta receptor blocking activity used to preclude angina and cardiac arrhythmias. To overcome the low, variable oral bioavailability of CRV, niosomal formulations were prepared and characterized: plain niosomes (without bile salts), bile salt-enriched niosomes (bilosomes containing various percentages of sodium cholate or sodium taurocholate), and charged niosomes (negative, containing dicetyl phosphate and positive, containing hexadecyl trimethyl ammonium bromide). All formulations were characterized in terms of encapsulation efficiency, size, zeta potential, release profile, stability, and morphology. Various formulations were administered orally to ten groups of Wistar rats (n=6 per group). The plasma levels of CRV were measured by a validated high-performance liquid chromatography (HPLC) method and pharmacokinetic properties of different formulations were characterized. Contribution of lymphatic transport to the oral bioavailability of niosomes was also investigated using a chylomicron flow-blocking approach. Of the bile salt-enriched vesicles examined, bilosomes containing 20% sodium cholate (F2) and 30% sodium taurocholate (F5) appeared to give the greatest enhancement of intestinal absorption. The relative bioavailability of F2 and F5 formulations to the suspension was estimated to be 1.84 and 1.64, respectively. With regard to charged niosomes, the peak plasma concentrations (Cmax) of CRV for positively (F7) and negatively charged formulations (F10) were approximately 2.3- and 1.7-fold higher than after a suspension. Bioavailability studies also revealed a significant increase in extent of drug absorption from charged vesicles. Tissue histology revealed no signs of inflammation or damage. The study proved that the type and concentration of bile salts as well as carrier surface charge had great influences on oral bioavailability of niosomes. Blocking the lymphatic absorption pathway

  9. Charge Transport across DNA-Based Three-Way Junctions.

    PubMed

    Young, Ryan M; Singh, Arunoday P N; Thazhathveetil, Arun K; Cho, Vincent Y; Zhang, Yuqi; Renaud, Nicolas; Grozema, Ferdinand C; Beratan, David N; Ratner, Mark A; Schatz, George C; Berlin, Yuri A; Lewis, Frederick D; Wasielewski, Michael R

    2015-04-22

    DNA-based molecular electronics will require charges to be transported from one site within a 2D or 3D architecture to another. While this has been shown previously in linear, π-stacked DNA sequences, the dynamics and efficiency of charge transport across DNA three-way junction (3WJ) have yet to be determined. Here, we present an investigation of hole transport and trapping across a DNA-based three-way junction systems by a combination of femtosecond transient absorption spectroscopy and molecular dynamics simulations. Hole transport across the junction is proposed to be gated by conformational fluctuations in the ground state which bring the transiently populated hole carrier nucleobases into better aligned geometries on the nanosecond time scale, thus modulating the π-π electronic coupling along the base pair sequence.

  10. Explicitly Solvable Model of the Charge Carriers' Phenomena in Isotropic Conducting Crystals

    NASA Astrophysics Data System (ADS)

    Budzak, Yaroslav S.; Wacławski, Tadeusz

    2017-01-01

    In this paper, a theoretical analysis of the kinetic properties of the isotropic conducting crystals is presented. The general formulas for these kinetic properties are expressed in terms of the Fermi integrals. These integrals were obtained using methods of statistical ensembles with varying number of particles and the Gibbs's grand canonical distribution. The determination of the scattering function and the exploration of its relation with the mobility of the current carriers inside these crystals have been made. Together with the results of theoretical analysis of the scattering function and its relation with the current carriers' mobility, these formulas constitute the mathematical model of the charge carriers' transport phenomena in conducting crystals (where a non-parabolic energy spectrum is described by Kane's formula) and provide algorithms for the calculation of these properties.

  11. Explicitly Solvable Model of the Charge Carriers' Phenomena in Isotropic Conducting Crystals

    NASA Astrophysics Data System (ADS)

    Budzak, Yaroslav S.; Wacławski, Tadeusz

    2017-04-01

    In this paper, a theoretical analysis of the kinetic properties of the isotropic conducting crystals is presented. The general formulas for these kinetic properties are expressed in terms of the Fermi integrals. These integrals were obtained using methods of statistical ensembles with varying number of particles and the Gibbs's grand canonical distribution. The determination of the scattering function and the exploration of its relation with the mobility of the current carriers inside these crystals have been made. Together with the results of theoretical analysis of the scattering function and its relation with the current carriers' mobility, these formulas constitute the mathematical model of the charge carriers' transport phenomena in conducting crystals (where a non-parabolic energy spectrum is described by Kane's formula) and provide algorithms for the calculation of these properties.

  12. Collective bulk carrier delocalization driven by electrostatic surface charge accumulation.

    PubMed

    Nakano, M; Shibuya, K; Okuyama, D; Hatano, T; Ono, S; Kawasaki, M; Iwasa, Y; Tokura, Y

    2012-07-25

    In the classic transistor, the number of electric charge carriers--and thus the electrical conductivity--is precisely controlled by external voltage, providing electrical switching capability. This simple but powerful feature is essential for information processing technology, and also provides a platform for fundamental physics research. As the number of charges essentially determines the electronic phase of a condensed-matter system, transistor operation enables reversible and isothermal changes in the system's state, as successfully demonstrated in electric-field-induced ferromagnetism and superconductivity. However, this effect of the electric field is limited to a channel thickness of nanometres or less, owing to the presence of Thomas-Fermi screening. Here we show that this conventional picture does not apply to a class of materials characterized by inherent collective interactions between electrons and the crystal lattice. We prepared metal-insulator-semiconductor field-effect transistors based on vanadium dioxide--a strongly correlated material with a thermally driven, first-order metal-insulator transition well above room temperature--and found that electrostatic charging at a surface drives all the previously localized charge carriers in the bulk material into motion, leading to the emergence of a three-dimensional metallic ground state. This non-local switching of the electronic state is achieved by applying a voltage of only about one volt. In a voltage-sweep measurement, the first-order nature of the metal-insulator transition provides a non-volatile memory effect, which is operable at room temperature. Our results demonstrate a conceptually new field-effect device, extending the concept of electric-field control to macroscopic phase control.

  13. Lateral Charge Transport in Silicon Nanomembranes

    NASA Astrophysics Data System (ADS)

    Hu, Weiwei

    Silicon nanomembranes, also called SiNMs, Si thin sheets or films, are a great platform to study surface sciences, since the bulk is diminished and the surface-to-volume ratio is large. In a single crystalline material, atoms on the surface experience different forces, electric fields, thermodynamic surroundings, etc., than those within the bulk. Therefore, unique structural, mechanical, electronic, optical, and many other properties associated with surfaces overweigh bulk effects; novel phenomena emerge. In particular, electronic features of Si are of significance due to the extensive use of Si in integrated circuit devices and biochemical sensor technologies. As a result, especially with the size of transistors quickly decreasing nowadays, the exploration of electronic characteristics of Si surfaces become much more significant. This is also interesting as a topic within the area of fundamental surface science. Silicon-on-insulator (SOI) provides a new structure for studying charge transport in the SiNM, which is monocrystalline and sits on top of the SOI wafer. I use SOI based SiNMs with two surface orientations: Si (001) and Si (111). The former is pervasive in industrial applications while the latter has interesting metallic surface states when 7x7 reconstruction occurs on a clean surface. My goal is to measure/infer the sheet conductance in the true surface layer with different surface situations, and to further investigate the surface band structure and how carriers distribute and move accordingly. The biggest challenge is to eliminate interferences, e.g., bulk effects. The following are two solutions. 1) The thickness of the used SiNMs spans 40 nm to 500 nm, with a nominal doping level of 1015 cm -3 in our experiment. A straightforward calculation of areal dopant density indicates that charge carriers from the extrinsic doping are 1˜2 orders of magnitude fewer than the trap states at the interface between the buried oxide in SOI and the top SiNM, meaning

  14. Acoustic charge transport induced by the surface acoustic wave in chemical doped graphene

    NASA Astrophysics Data System (ADS)

    Zheng, Shijun; Zhang, Hao; Feng, Zhihong; Yu, Yuanyuan; Zhang, Rui; Sun, Chongling; Liu, Jing; Duan, Xuexin; Pang, Wei; Zhang, Daihua

    2016-10-01

    A graphene/LiNbO3 hybrid device is used to investigate the acoustic induced charge transport in chemical doped graphene. The chemical doping of graphene via its physisorption of gas molecules affects the surface acoustic wave (SAW) charge carrier transport in a manner different from electric field drift. That transport induces doping dependent macroscopic acoustoelectric current. The chemical doping can manipulate majority carriers and induces unique acoustoelectric features. The observation is explained by a classical relaxation model. Eventually the device based on acoustoelectric current is proved to outperform the common chemiresistor for chemicals. Our finding provides insight into acoustic charge carrier transport during chemical doping. The doping affects interaction of carriers with SAW phonon and facilitates the understanding of nanoscale acoustoelectric effect. The exploration inspires potential acoustoelectric application for chemical detection involving emerging 2D nanomaterials.

  15. Polaron mass of charge carriers in semiconductor quantum wells

    SciTech Connect

    Maslov, A. Yu. Proshina, O. V.

    2015-10-15

    A theory of the interaction of charge carriers with optical phonons in a quantum well is developed with consideration for interface optical phonons. The dependence of the polaron effective mass on the quantum-well dimensions and dielectric characteristics of barriers is analyzed in detail. It is shown that, in narrow quantum wells, a quasi-two-dimensional polaron can be formed. In this case, however, the interaction parameters are defined by the charge-carrier effective mass in the quantum well and by the frequencies of interface optical phonons. If barriers are made of a nonpolar material, the polaron effective mass depends on the quantum-well width. As the quantum-well width is increased, a new mechanism of enhancement of the electron–phonon interaction develops. The mechanism is implemented, if the optical phonon energy is equal to the energy of one of the electronic transitions. This condition yields an unsteady dependence of the polaron effective mass on the quantum-well width.

  16. Charge carrier tuning of mid-infrared plasmonic devices

    NASA Astrophysics Data System (ADS)

    Anglin, Kevin

    There is currently a wide variety of passive plasmonic technologies, with applications in the fields of sensing, security, and optical interconnects and computing. Development of a rapidly and broadly tunable plasmonic device would be an enabling technology, giving active control over these traditionally passive devices. The free charge carrier concentration directly affects the dielectric permittivity of a semiconductor, which in turn determines the plasmonic resonance. Metal-oxide-semiconductor capacitors using n-type substrates permit the modulation of free charge carriers in a semiconductor by applying a bias. In this study, MOS-capacitors were fabricated with an extraordinary optical transmission gratings built into the top gate. Tuning of the optical resonance of an EOT spectrum is shown applying a reverse bias across the semiconductor. The oxide layer used was hafnium dioxide, grown by atomic layer deposition. The electrical properties of the hafnia were studied in order to maximize the capabilities of this design. The samples were processed using standard photolithography and wet etching techniques, and characterized by optical microscopy, probe testing, and transmission spectroscopy. Resonant tuning of 30 nm has been demonstrated. The maximum depletion width in the semiconductor limited the effect and prohibited broader tuning.

  17. 41 CFR 302-7.103 - How are the charges calculated when a carrier charges a minimum weight, but the actual weight of...

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ...-TRANSPORTATION AND TEMPORARY STORAGE OF HOUSEHOLD GOODS, PROFESSIONAL BOOKS, PAPERS, AND EQUIPMENT, (PBP&E) AND... calculated when a carrier charges a minimum weight, but the actual weight of HHG, PBP&E and temporary storage... minimum weight, but the actual weight of HHG, PBP&E and temporary storage is less than the minimum...

  18. Intrinsic slow charge response in the perovskite solar cells: Electron and ion transport

    SciTech Connect

    Shi, Jiangjian; Xu, Xin; Zhang, Huiyin; Luo, Yanhong; Li, Dongmei; Meng, Qingbo

    2015-10-19

    The intrinsic charge response and hysteresis characteristic in the perovskite solar cell has been investigated by an electrically modulated transient photocurrent technology. An ultraslow charge response process in the timescale of seconds is observed, which can be well explained by the ion migration in the perovskite CH{sub 3}NH{sub 3}PbI{sub 3} film driven by multiple electric fields derived from the heterojunction depletion charge, the external modulation, and the accumulated ion charge. Furthermore, theoretical calculation of charge transport reveals that the hysteresis behavior is also significantly influenced by the interfacial charge extraction velocity and the carrier transport properties inside the cell.

  19. Charge Transport in Hybrid Halide Perovskite Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Jurchescu, Oana

    Hybrid organic-inorganic trihalide perovskite (HTP) materials exhibit a strong optical absorption, tunable band gap, long carrier lifetimes and fast charge carrier transport. These remarkable properties, coupled with their reduced complexity processing, make the HTPs promising contenders for large scale, low-cost thin film optoelectronic applications. But in spite of the remarkable demonstrations of high performance solar cells, light-emitting diodes and field-effect transistor devices, all of which took place in a very short time period, numerous questions related to the nature and dynamics of the charge carriers and their relation to device performance, stability and reliability still remain. This presentation describes the electrical properties of HTPs evaluated from field-effect transistor measurements. The electrostatic gating of provides an unique platform for the study of intrinsic charge transport in these materials, and, at the same time, expand the use of HTPs towards switching electronic devices, which have not been explored previously. We fabricated FETs on SiO2 and polymer dielectrics from spin coating, thermal evaporation and spray deposition and compare their properties. CH3NH3PbI3-xClx can reach balanced electron and hole mobilities of 10 cm2/Vs upon tuning the thin-film microstructure, injection and the defect density at the semiconductor/dielectric interface. The work was performed in collaboration with Yaochuan Mei (Wake Forest University), Chuang Zhang, and Z. Valy Vardeny (University of Utah). The work is supported by ONR Grant N00014-15-1-2943.

  20. Charge carrier photogeneration, trapping, and space-charge field formation in PVK-based photorefractive materials

    NASA Astrophysics Data System (ADS)

    Däubler, T. K.; Bittner, R.; Meerholz, K.; Cimrová, V.; Neher, D.

    2000-05-01

    We studied the dark conductivity (jdark), the photoconductivity (jphoto), and the charge carrier photogeneration efficiency η of poly(N-vinylcarbazole)-based photorefractive (PR) materials with different glass-transition temperatures (Tg) and chromophore content (ρCHR). Measurements were carried out at wavelengths similar to those used in degenerate four-wave mixing (DFWM) and two-beam coupling (2BC) experiments. Both thick (37 μm) and thin samples (~1 μm) were analyzed. Photoconductivity experiments at different temperatures show that both jdark and jphoto are thermally activated. For jdark the activation is not related to the glass-transition temperature of the blends, whereas photocurrents exhibit a universal behavior with respect to Tr=Tg-T. The charge carrier photogeneration efficiency η was measured by xerographic discharge experiments. η was found to be independent of both Tg and of ρCHR. The photoconductivity gain factor G defined as the number of charge carriers measured in photoconductivity in relation to the number of carriers initially photogenerated as determined by the xerographic experiments is used to compare the results of photoconductivity and xerographic discharge experiments. G is found to be much smaller than unity even for thin samples, which indicates that the mean free path of the photogenerated charge carriers is less than 1 μm at photoelectrical equilibrium. Using Schildkraut's model for the space-charge field formation in organic PR materials, trap densities Ti of approximately 1017 cm-3 could be derived from G. The field and temperature dependence of Ti is independent of ρCHR and might account for the universal Tr dependence of jphoto. The estimated trap densities are used to calculate the first-order Fourier component of the space-charge field in the PR materials illuminated with a sinusoidal intensity pattern. Modifying Schildkraut's model so that the tilt between the applied electric field and the index of refraction grating

  1. Acoustic carrier transportation induced by surface acoustic waves in graphene in solution

    NASA Astrophysics Data System (ADS)

    Okuda, Satoshi; Ikuta, Takashi; Kanai, Yasushi; Ono, Takao; Ogawa, Shinpei; Fujisawa, Daisuke; Shimatani, Masaaki; Inoue, Koichi; Maehashi, Kenzo; Matsumoto, Kazuhiko

    2016-04-01

    The acoustic charge transportation induced by surface acoustic wave (SAW) propagation in graphene in solution was investigated. The sign of acoustic current (I A) was found to switch when crossing the Dirac point because the major carrier was transitioned from holes to electrons by the change in electrolyte-gate voltage. I A also exhibited a peak value under conditions of both hole and electron conduction. These results can be explained on the basis of a change in the type of major carrier in graphene, as well as a change in the carrier mobility of graphene.

  2. Charge and spin transport in mesoscopic superconductors

    PubMed Central

    Wolf, M J; Hübler, F; Kolenda, S

    2014-01-01

    Summary Background: Non-equilibrium charge transport in superconductors has been investigated intensely in the 1970s and 1980s, mostly in the vicinity of the critical temperature. Much less attention has been paid to low temperatures and the role of the quasiparticle spin. Results: We report here on nonlocal transport in superconductor hybrid structures at very low temperatures. By comparing the nonlocal conductance obtained by using ferromagnetic and normal-metal detectors, we discriminate charge and spin degrees of freedom. We observe spin injection and long-range transport of pure, chargeless spin currents in the regime of large Zeeman splitting. We elucidate charge and spin transport by comparison to theoretical models. Conclusion: The observed long-range chargeless spin transport opens a new path to manipulate and utilize the quasiparticle spin in superconductor nanostructures. PMID:24605283

  3. 14 CFR 382.31 - May carriers impose special charges on passengers with a disability for providing services and...

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 4 2014-01-01 2014-01-01 false May carriers impose special charges on... 382.31 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION (AVIATION PROCEEDINGS) SPECIAL REGULATIONS NONDISCRIMINATION ON THE BASIS OF DISABILITY IN AIR TRAVEL...

  4. 14 CFR 382.31 - May carriers impose special charges on passengers with a disability for providing services and...

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 4 2010-01-01 2010-01-01 false May carriers impose special charges on... 382.31 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION (AVIATION PROCEEDINGS) SPECIAL REGULATIONS NONDISCRIMINATION ON THE BASIS OF DISABILITY IN AIR TRAVEL...

  5. Charge generation, charge transport, and residual charge in the electrospinning of polymers: A review of issues and complications

    NASA Astrophysics Data System (ADS)

    Collins, George; Federici, John; Imura, Yuki; Catalani, Luiz H.

    2012-02-01

    Electrospinning has become a widely implemented technique for the generation of nonwoven mats that are useful in tissue engineering and filter applications. The overriding factor that has contributed to the popularity of this method is the ease with which fibers with submicron diameters can be produced. Fibers on that size scale are comparable to protein filaments that are observed in the extracellular matrix. The apparatus and procedures for conducting electrospinning experiments are ostensibly simple. While it is rarely reported in the literature on this topic, any experience with this method of fiber spinning reveals substantial ambiguities in how the process can be controlled to generate reproducible results. The simplicity of the procedure belies the complexity of the physical processes that determine the electrospinning process dynamics. In this article, three process domains and the physical domain of charge interaction are identified as important in electrospinning: (a) creation of charge carriers, (b) charge transport, (c) residual charge. The initial event that enables electrospinning is the generation of region of excess charge in the fluid that is to be electrospun. The electrostatic forces that develop on this region of charged fluid in the presence of a high potential result in the ejection of a fluid jet that solidifies into the resulting fiber. The transport of charge from the charge solution to the grounded collection device produces some of the current which is observed. That transport can occur by the fluid jet and through the atmosphere surrounding the electrospinning apparatus. Charges that are created in the fluid that are not dissipated remain in the solidified fiber as residual charges. The physics of each of these domains in the electrospinning process is summarized in terms of the current understanding, and possible sources of ambiguity in the implementation of this technique are indicated. Directions for future research to further

  6. The effect of carrier gas contaminants on the charging probability of aerosols under bipolar charging conditions

    PubMed Central

    Steiner, Gerhard; Reischl, Georg P.

    2012-01-01

    This work concentrates on the experimental determination of the properties of ionic molecular clusters that are produced in the bipolar ionic atmosphere of a radioactivity based 241Am charger. The main scope of this study was to investigate the dependency of the ions' properties on carrier gas contaminants caused by the evaporation of trace gases from different kinds of frequently encountered tubing materials. A recently developed high resolution mobility spectrometer allows the precise determination of the ions' electrical mobility; an empirical mass-mobility relationship was used to approximate the corresponding ion masses. It was found that impurities in the carrier gas dramatically change the pattern of the ion mobility/size distribution, resulting in very different ion properties that strongly depend on the carrier gas composition. Since the ion properties control the charging process of aerosols, it was further investigated how the different ion properties affect the calculation of the charging probabilities of aerosols. The results show that despite large variations of the ions' properties, only a minor effect on the calculated charging probabilities can be found. PMID:23209330

  7. Fractal spectrum of charge carriers in quasiperiodic graphene structures.

    PubMed

    Sena, S H R; Pereira, J M; Farias, G A; Vasconcelos, M S; Albuquerque, E L

    2010-11-24

    In this work we investigate the interaction of charge carriers in graphene with a series of p-n-p junctions arranged according to a deterministic quasiperiodic substitutional Fibonacci sequence. The junctions create a potential landscape with quantum wells and barriers of different widths, allowing the existence of quasi-confined states. Spectra of quasi-confined states are calculated for several generations of the Fibonacci sequence as a function of the wavevector component parallel to the barrier interfaces. The results show that, as the Fibonacci generation is increased, the dispersion branches form energy bands distributed as a Cantor-like set. Besides, for a quasiperiodic set of potential barriers, we obtain the electronic tunneling probability as a function of energy, which shows a striking self-similar behavior for different generation numbers.

  8. Ambipolar charge transport in microcrystalline silicon thin-film transistors

    SciTech Connect

    Knipp, Dietmar; Marinkovic, M.; Chan, Kah-Yoong; Gordijn, Aad; Stiebig, Helmut

    2011-01-15

    Hydrogenated microcrystalline silicon ({mu}c-Si:H) is a promising candidate for thin-film transistors (TFTs) in large-area electronics due to high electron and hole charge carrier mobilities. We report on ambipolar TFTs based on {mu}c-Si:H prepared by plasma-enhanced chemical vapor deposition at temperatures compatible with flexible substrates. Electrons and holes are directly injected into the {mu}c-Si:H channel via chromium drain and source contacts. The TFTs exhibit electron and hole charge carrier mobilities of 30-50 cm{sup 2}/V s and 10-15 cm{sup 2}/V s, respectively. In this work, the electrical characteristics of the ambipolar {mu}c-Si:H TFTs are described by a simple analytical model that takes the ambipolar charge transport into account. The analytical expressions are used to model the transfer curves, the potential and the net surface charge along the channel of the TFTs. The electrical model provides insights into the electronic transport of ambipolar {mu}c-Si:H TFTs.

  9. Intrinsic Charge Carrier Mobility in Single-Layer Black Phosphorus.

    PubMed

    Rudenko, A N; Brener, S; Katsnelson, M I

    2016-06-17

    We present a theory for single- and two-phonon charge carrier scattering in anisotropic two-dimensional semiconductors applied to single-layer black phosphorus (BP). We show that in contrast to graphene, where two-phonon processes due to the scattering by flexural phonons dominate at any practically relevant temperatures and are independent of the carrier concentration n, two-phonon scattering in BP is less important and can be considered negligible at n≳10^{13}  cm^{-2}. At smaller n, however, phonons enter in the essentially anharmonic regime. Compared to the hole mobility, which does not exhibit strong anisotropy between the principal directions of BP (μ_{xx}/μ_{yy}∼1.4 at n=10^{13} cm^{-2} and T=300  K), the electron mobility is found to be significantly more anisotropic (μ_{xx}/μ_{yy}∼6.2). Absolute values of μ_{xx} do not exceed 250 (700)  cm^{2} V^{-1} s^{-1} for holes (electrons), which can be considered as an upper limit for the mobility in BP at room temperature.

  10. Plasma model of carrier transportation in photoelectric semiconductor detectors

    NASA Astrophysics Data System (ADS)

    Ma, L. Q.; Lu, Q. S.; Du, S. J.

    2006-02-01

    A new model, called the plasma model, describing carrier transportation in photoelectric semiconductor detectors is proposed. Semiconductor material under laser irradiation is regarded as a plasma of low temperature with high carrier density, and it is considered that the carrier temperature is different from the lattice temperature when the irradiating laser power is high but lower than the damage threshold of the detectors. Equations for the carrier density, velocity and temperature are established. According to the model, numerical simulations of a photoconductive semiconductor detector were carried out by programming. The instantaneous change behaviors of the photoconductive detector are obtained. The results of the numerical calculation match well with the experimental results.

  11. Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Puls, Conor P.; Staley, Neal E.; Moon, Jeong-Sun; Robinson, Joshua A.; Campbell, Paul M.; Tedesco, Joseph L.; Myers-Ward, Rachael L.; Eddy, Charles R.; Gaskill, D. Kurt; Liu, Ying

    2011-07-01

    We show that an e-gun deposited dielectric impose severe limits on epitaxial graphene-based device performance based on Raman spectroscopy and low-temperature transport measurements. Specifically, we show from studies of epitaxial graphene Hall bars covered by SiO2 that the measured carrier density is strongly inhomogenous and predominantly induced by charged impurities at the grapheme/dielectric interface that limit mobility via Coulomb interactions. Our work emphasizes that material integration of epitaxial graphene and a gate dielectric is the next major road block towards the realization of graphene-based electronics.

  12. Photo-excited charge carriers suppress sub-terahertz phonon mode in silicon at room temperature

    PubMed Central

    Liao, Bolin; Maznev, A. A.; Nelson, Keith A.; Chen, Gang

    2016-01-01

    There is a growing interest in the mode-by-mode understanding of electron and phonon transport for improving energy conversion technologies, such as thermoelectrics and photovoltaics. Whereas remarkable progress has been made in probing phonon–phonon interactions, it has been a challenge to directly measure electron–phonon interactions at the single-mode level, especially their effect on phonon transport above cryogenic temperatures. Here we use three-pulse photoacoustic spectroscopy to investigate the damping of a single sub-terahertz coherent phonon mode by free charge carriers in silicon at room temperature. Building on conventional pump–probe photoacoustic spectroscopy, we introduce an additional laser pulse to optically generate charge carriers, and carefully design temporal sequence of the three pulses to unambiguously quantify the scattering rate of a single-phonon mode due to the electron–phonon interaction. Our results confirm predictions from first-principles simulations and indicate the importance of the often-neglected effect of electron–phonon interaction on phonon transport in doped semiconductors. PMID:27731406

  13. Photo-excited charge carriers suppress sub-terahertz phonon mode in silicon at room temperature

    NASA Astrophysics Data System (ADS)

    Liao, Bolin; Maznev, A. A.; Nelson, Keith A.; Chen, Gang

    2016-10-01

    There is a growing interest in the mode-by-mode understanding of electron and phonon transport for improving energy conversion technologies, such as thermoelectrics and photovoltaics. Whereas remarkable progress has been made in probing phonon-phonon interactions, it has been a challenge to directly measure electron-phonon interactions at the single-mode level, especially their effect on phonon transport above cryogenic temperatures. Here we use three-pulse photoacoustic spectroscopy to investigate the damping of a single sub-terahertz coherent phonon mode by free charge carriers in silicon at room temperature. Building on conventional pump-probe photoacoustic spectroscopy, we introduce an additional laser pulse to optically generate charge carriers, and carefully design temporal sequence of the three pulses to unambiguously quantify the scattering rate of a single-phonon mode due to the electron-phonon interaction. Our results confirm predictions from first-principles simulations and indicate the importance of the often-neglected effect of electron-phonon interaction on phonon transport in doped semiconductors.

  14. Evolved phase separation toward balanced charge transport and high efficiency in polymer solar cells.

    PubMed

    Fan, Haijun; Zhang, Maojie; Guo, Xia; Li, Yongfang; Zhan, Xiaowei

    2011-09-01

    Understanding effect of morphology on charge carrier transport within polymer/fullerene bulk heterojunction is necessary to develop high-performance polymer solar cells. In this work, we synthesized a new benzodithiophene-based polymer with good self-organization behavior as well as favorable morphology evolution of its blend films with PC(71)BM under improved processing conditions. Charge carrier transport behavior of blend films was characterized by space charge limited current method. Evolved blend film morphology by controlling blend composition and additive content gradually reaches an optimized state, featured with nanoscale fibrilla polymer phase in moderate size and balanced mobility ratio close to 1:1 for hole and electron. This optimized morphology toward more balanced charge carrier transport accounts for the best power conversion efficiency of 3.2%, measured under simulated AM 1.5 solar irradiation 100 mW/cm(2), through enhancing short circuit current and reducing geminate recombination loss.

  15. Superexchange Charge Transport in Loaded Metal Organic Frameworks.

    PubMed

    Neumann, Tobias; Liu, Jianxi; Wächter, Tobias; Friederich, Pascal; Symalla, Franz; Welle, Alexander; Mugnaini, Veronica; Meded, Velimir; Zharnikov, Michael; Wöll, Christof; Wenzel, Wolfgang

    2016-07-26

    In the past, nanoporous metal-organic frameworks (MOFs) have been mostly studied for their huge potential with regard to gas storage and separation. More recently, the discovery that the electrical conductivity of a widely studied, highly insulating MOF, HKUST-1, improves dramatically when loaded with guest molecules has triggered a huge interest in the charge carrier transport properties of MOFs. The observed high conductivity, however, is difficult to reconcile with conventional transport mechanisms: neither simple hopping nor band transport models are consistent with the available experimental data. Here, we combine theoretical results and new experimental data to demonstrate that the observed conductivity can be explained by an extended hopping transport model including virtual hops through localized MOF states or molecular superexchange. Predictions of this model agree well with precise conductivity measurements, where experimental artifacts and the influence of defects are largely avoided by using well-defined samples and the Hg-drop junction approach.

  16. 49 CFR 375.705 - If a shipment is transported on more than one vehicle, what charges may I collect at delivery?

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 49 Transportation 5 2011-10-01 2011-10-01 false If a shipment is transported on more than one vehicle, what charges may I collect at delivery? 375.705 Section 375.705 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL MOTOR CARRIER SAFETY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION FEDERAL MOTOR CARRIER...

  17. Mechanisms of carrier transport induced by a microswimmer bath.

    PubMed

    Kaiser, Andreas; Sokolov, Andrey; Aranson, Igor S; Löwen, Hartmut

    2015-04-01

    It was shown that a wedgelike microparticle (referred to as "carrier") exhibits a directed translational motion along the wedge cusp if it is exposed to a bath of microswimmers. Here we model this effect in detail by resolving the microswimmers explicitly using interaction models with different degrees of mutual alignment. Using computer simulations we study the impact of these interactions on the transport efficiency of a V-shaped carrier. We show that the transport mechanism itself strongly depends on the degree of alignment embodied in the modeling of the individual swimmer dynamics. For weak alignment, optimal carrier transport occurs in the turbulent microswimmer state and is induced by swirl depletion inside the carrier. For strong aligning interactions, optimal transport occurs already in the dilute regime and is mediated by a polar cloud of swimmers in the carrier wake pushing the wedge-particle forward. We also demonstrate that the optimal shape of the carrier leading to maximal transport speed depends on the kind of interaction model used.

  18. Theoretical characterization of charge transport in organic molecular crystals

    NASA Astrophysics Data System (ADS)

    Sanchez-Carrera, Roel S.

    The rapid growth in the interest to explore new synthetic crystalline organic semiconductors and their subsequent device characterization has revived the debate on the development of theoretical models to better understand the intrinsic charge transport mechanisms in organic materials. At the moment, several charge-transport theories for organic molecular crystals have been proposed and have observed a comparable agreement with experimental results. However, these models are limited in scope and restricted to specific ranges of microscopic parameters and temperatures. A general description that is applicable in all parameter regimes is still unavailable. The first step towards a complete understanding of the problem associated with the charge transport in organic molecular crystals includes the development of a first-principles theoretical methodology to evaluate with high accuracy the main microscopic charge-transport parameters and their respective couplings with intra- and intermolecular vibrational degrees of freedom. In this thesis, we have developed a first-principles methodology to investigate the impact of electron-phonon interactions on the charge-carrier mobilities in organic molecular crystals. Well-known organic materials such as oligoacene and oligothienoacene derivatives were studied in detail. To predict the charge-transport phenomena in organic materials, we rely on the Marcus theory of electron-transfer reactions. Within this context, the nature of the intramolecular vibronic coupling in oligoacenes was studied using an approach that combines high-resolution gas-phase photo-electron spectroscopy measurements with first-principles quantum-mechanical calculations. This further led to investigation of the electron interactions with optical phonons in oligoacene single crystals. The lattice phonon modes were computed at both density functional theory (DFT) and empirical force field levels. The low-frequency optical modes are found to play a significant

  19. Improved charge carrier lifetime in planar perovskite solar cells by bromine doping

    NASA Astrophysics Data System (ADS)

    Kiermasch, David; Rieder, Philipp; Tvingstedt, Kristofer; Baumann, Andreas; Dyakonov, Vladimir

    2016-12-01

    The charge carrier lifetime is an important parameter in solar cells as it defines, together with the mobility, the diffusion length of the charge carriers, thus directly determining the optimal active layer thickness of a device. Herein, we report on charge carrier lifetime values in bromine doped planar methylammonium lead iodide (MAPbI3) solar cells determined by transient photovoltage. The corresponding charge carrier density has been derived from charge carrier extraction. We found increased lifetime values in solar cells incorporating bromine compared to pure MAPbI3 by a factor of ~2.75 at an illumination intensity corresponding to 1 sun. In the bromine containing solar cells we additionally observe an anomalously high value of extracted charge, which we deduce to originate from mobile ions.

  20. Improved charge carrier lifetime in planar perovskite solar cells by bromine doping

    PubMed Central

    Kiermasch, David; Rieder, Philipp; Tvingstedt, Kristofer; Baumann, Andreas; Dyakonov, Vladimir

    2016-01-01

    The charge carrier lifetime is an important parameter in solar cells as it defines, together with the mobility, the diffusion length of the charge carriers, thus directly determining the optimal active layer thickness of a device. Herein, we report on charge carrier lifetime values in bromine doped planar methylammonium lead iodide (MAPbI3) solar cells determined by transient photovoltage. The corresponding charge carrier density has been derived from charge carrier extraction. We found increased lifetime values in solar cells incorporating bromine compared to pure MAPbI3 by a factor of ~2.75 at an illumination intensity corresponding to 1 sun. In the bromine containing solar cells we additionally observe an anomalously high value of extracted charge, which we deduce to originate from mobile ions. PMID:27982095

  1. Improved charge carrier lifetime in planar perovskite solar cells by bromine doping.

    PubMed

    Kiermasch, David; Rieder, Philipp; Tvingstedt, Kristofer; Baumann, Andreas; Dyakonov, Vladimir

    2016-12-16

    The charge carrier lifetime is an important parameter in solar cells as it defines, together with the mobility, the diffusion length of the charge carriers, thus directly determining the optimal active layer thickness of a device. Herein, we report on charge carrier lifetime values in bromine doped planar methylammonium lead iodide (MAPbI3) solar cells determined by transient photovoltage. The corresponding charge carrier density has been derived from charge carrier extraction. We found increased lifetime values in solar cells incorporating bromine compared to pure MAPbI3 by a factor of ~2.75 at an illumination intensity corresponding to 1 sun. In the bromine containing solar cells we additionally observe an anomalously high value of extracted charge, which we deduce to originate from mobile ions.

  2. Carrier transport and viscosity of discotic liquid-crystalline photoconductor hexaoctylthio-triphenylene

    NASA Astrophysics Data System (ADS)

    Monobe, Hirosato; Shimizu, Yo

    2014-01-01

    In this study, the electronic and ionic carrier transports and viscosity of 2,3,6,7,10,11-hexaoctylthio-triphenylene (C8STP) were studied by a time-of-flight method and using a rotational viscometer. Ambipolar charge carrier transport was investigated in the isotropic liquid (Iso) phase of C8STP, similarly to the columnar hexagonal mesophase, and the activation energies were estimated to be 0.1 eV for one positive and one negative, and 0.4 eV for the other negative charge carrier mobility in Iso. The viscosity of C8STP was investigated using a rotation viscometer, and relative viscosity was measured by a capillary method in the isotropic phase, and the activation energy of viscosity was 0.4 eV. The Stokes radii of ionic carriers were experimentally estimated using Walden’s rule. The existence of ionic and electronic (hopping) carrier transports in Iso was implied for the discotic liquid crystalline photoconductor.

  3. Charge carrier mobilities in organic semiconductors: crystal engineering and the importance of molecular contacts.

    PubMed

    Bashir, Asif; Heck, Alexander; Narita, Akimitsu; Feng, Xinliang; Nefedov, Alexei; Rohwerder, Michael; Müllen, Klaus; Elstner, Marcus; Wöll, Christof

    2015-09-14

    We have conducted a combined experimental and theoretical study on the optimization of hexa-peri-hexabenzocoronene (HBC) as organic semiconductor. While orientations with high electronic coupling are unfavorable in the native liquid crystalline phase of HBC, we enforced such orientations by applying external constraints. To this end, self-assembled monolayers (SAMs) were formed by a non-conventional preparation method on an Au-substrate using electrochemical control. Within these SAMs the HBC units are forced into favorable orientations that cannot be achieved by unconstrained crystallization. For simulating the charge transport we applied a recently developed approach, where the molecular structure and the charge carrier are propagated simultaneously during a molecular dynamics simulation. Experiments as well as simulations are mutually supportive of an improved mobility in these novel materials. The implication of these findings for a rational design of future organic semiconductors will be discussed.

  4. Electric Properties of Obsidian: Evidence for Positive Hole Charge Carriers

    NASA Astrophysics Data System (ADS)

    Nordvik, R.; Freund, F. T.

    2012-12-01

    The blackness of obsidian is due to the presence of oxygen anions in the valence state 1-, creating broad energy levels at the upper edge of the valence band, which absorb visible light over a wide spectral range. These energy states are associated with defect electrons in the oxygen anion sublattice, well-known from "smoky quartz", where Al substituting for Si captures a defect electron in the oxygen anion sublattice for charge compensation [1]. Such defect electrons, also known as positive holes, are responsible for the increase in electrical conductivity in igneous rocks when uniaxial stresses are applied, causing the break-up of pre-existing peroxy defects, Si-OO-Si [2]. Peroxy defects in obsidian cannot be so easily activated by mechanical stress because the glassy matrix will break before sufficiently high stress levels can be reached. If peroxy defects do exist, however, they can be studied by activating them thermally [3]. We describe experiments with rectangular slabs of obsidian with Au electrodes at both ends. Upon heating one end, we observe (i) a thermopotential and (ii) a thermocurrent developing at distinct temperatures around 250°C and 450°C, marking the 2-step break-up of peroxy bonds. [1] Schnadt, R., and Schneider, J.: The electronic structure of the trapped-hole center in smoky quartz, Zeitschrift Physik B Condensed Matter 11, 19-42, 1970. [2] Freund, F. T., Takeuchi, A., and Lau, B. W.: Electric currents streaming out of stressed igneous rocks - A step towards understanding pre-earthquake low frequency EM emissions, Physics and Chemistry of the Earth, 31, 389-396, 2006. [3] Freund, F., and Masuda, M. M.: Highly mobile oxygen hole-type charge carriers in fused silica, Journal Material Research, 8, 1619-1622, 1991.

  5. 47 CFR 36.381 - Carrier access charge billing and collecting expense.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... Operating Expenses and Taxes Customer Operations Expenses § 36.381 Carrier access charge billing and collecting expense. (a) This classification includes the revenue accounting functions associated with the... Carrier access charge billing and collecting expense classification based on the relative...

  6. 47 CFR 36.381 - Carrier access charge billing and collecting expense.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... Operating Expenses and Taxes Customer Operations Expenses § 36.381 Carrier access charge billing and collecting expense. (a) This classification includes the revenue accounting functions associated with the... Carrier access charge billing and collecting expense classification based on the relative...

  7. Symposium GC: Nanoscale Charge Transport in Excitonic Solar Cells

    SciTech Connect

    Bommisetty, Venkat

    2011-06-23

    This paper provides a summary only and table of contents of the sessions. Excitonic solar cells, including all-organic, hybrid organic-inorganic and dye-sensitized solar cells (DSSCs), offer strong potential for inexpensive and large-area solar energy conversion. Unlike traditional inorganic semiconductor solar cells, where all the charge generation and collection processes are well understood, these excitonic solar cells contain extremely disordered structures with complex interfaces which results in large variations in nanoscale electronic properties and has a strong influence on carrier generation, transport, dissociation and collection. Detailed understanding of these processes is important for fabrication of highly efficient solar cells. Efforts to improve efficiency are underway at a large number of research groups throughout the world focused on inorganic and organic semiconductors, photonics, photophysics, charge transport, nanoscience, ultrafast spectroscopy, photonics, semiconductor processing, device physics, device structures, interface structure etc. Rapid progress in this multidisciplinary area requires strong synergetic efforts among researchers from diverse backgrounds. Such effort can lead to novel methods for development of new materials with improved photon harvesting and interfacial treatments for improved carrier transport, process optimization to yield ordered nanoscale morphologies with well defined electronic structures.

  8. Mechanisms of Carrier Transport Induced by a Microswimmer Bath

    SciTech Connect

    Kaiser, Andreas; Sokolov, Andrey; Aranson, Igor S.; Lowen, Hartmut

    2015-04-01

    Recently, it was found that a wedgelike microparticle (referred to as ”carrier”) which is only allowed to translate but not to rotate exhibits a directed translational motion along the wedge cusp if it is exposed to a bath of microswimmers. Here we model this effect in detail by resolving the microswimmers explicitly using interaction models with different degrees of mutual alignment. Using computer simulations we study the impact of these interactions on the transport efficiency of V-shaped carrier. We show that the transport mechanisms itself strongly depends on the degree of alignment embodied in the modelling of the individual swimmer dynamics. For weak alignment, optimal carrier transport occurs in the turbulent microswimmer state and is induced by swirl depletion inside the carrier. For strong aligning interactions, optimal transport occurs already in the dilute regime and is mediated by a polar cloud of swimmers in the carrier wake pushing the wedge-particle forward. We also demonstrate that the optimal shape of the carrier leading to maximal transport speed depends on the kind of interaction model used.

  9. Transmission line model for strained quantum well lasers including carrier transport and carrier heating effects.

    PubMed

    Xia, Mingjun; Ghafouri-Shiraz, H

    2016-03-01

    This paper reports a new model for strained quantum well lasers, which are based on the quantum well transmission line modeling method where effects of both carrier transport and carrier heating have been included. We have applied this new model and studied the effect of carrier transport on the output waveform of a strained quantum well laser both in time and frequency domains. It has been found that the carrier transport increases the turn-on, turn-off delay times and damping of the quantum well laser transient response. Also, analysis in the frequency domain indicates that the carrier transport causes the output spectrum of the quantum well laser in steady state to exhibit a redshift which has a narrower bandwidth and lower magnitude. The simulation results of turning-on transients obtained by the proposed model are compared with those obtained by the rate equation laser model. The new model has also been used to study the effects of pump current spikes on the laser output waveforms properties, and it was found that the presence of current spikes causes (i) wavelength blueshift, (ii) larger bandwidth, and (iii) reduces the magnitude and decreases the side-lobe suppression ratio of the laser output spectrum. Analysis in both frequency and time domains confirms that the new proposed model can accurately predict the temporal and spectral behaviors of strained quantum well lasers.

  10. Charge carrier concentration and temperature dependent recombination in polymer-fullerene solar cells

    NASA Astrophysics Data System (ADS)

    Foertig, A.; Baumann, A.; Rauh, D.; Dyakonov, V.; Deibel, C.

    2009-08-01

    We performed temperature dependent transient photovoltage and photocurrent measurements on poly(3-hexylthiophene):[6,6]-phenyl-C61 butyric acid methyl ester bulk heterojuction solar cells. We found a strongly charge carrier concentration and temperature dependent Langevin recombination prefactor. The observed recombination mechanism is discussed in terms of bimolecular recombination. The experimental results were compared with charge carrier extraction by linearly increasing voltage measurements done on the same blend system. We explain the charge carrier dynamics, following an apparent order larger than two, by dynamic trapping of charges in the tail states of the Gaussian density of states.

  11. Measuring charge carrier mobility in photovoltaic devices with micron-scale resolution

    SciTech Connect

    Ashraf, A.; Dissanayake, D. M. N. M.; Eisaman, M. D.

    2015-03-16

    We present a charge-extraction technique, micron-scale charge extraction by linearly increasing voltage, which enables simultaneous spatially resolved measurements of charge carrier mobility and photocurrent in thin-film photovoltaic devices with micron-scale resolution. An intensity-modulated laser with beam diameter near the optical diffraction limit is scanned over the device, while a linear voltage ramp in reverse bias is applied at each position of illumination. We calculate the majority carrier mobility, photocurrent, and number of photogenerated charge carriers from the resulting current transient. We demonstrate this technique on an organic photovoltaic device, but it is applicable to a wide range of photovoltaic materials.

  12. Organic Semiconductors: A Molecular Picture of the Charge-Transport and Energy-Transport Processes.

    NASA Astrophysics Data System (ADS)

    Brédas, Jean-Luc

    2007-03-01

    Conjugated organic oligomer and polymer materials are being increasingly considered for their incorporation as the active semiconductor elements in devices such as photo-voltaic cells, light-emitting diodes, or field-effects transistors. In the operation of these devices, electron-transfer and energy-transfer processes play a key role, for instance in the form of charge transport (in the bulk or across interfaces), energy transport, charge separation, or charge recombination [1]. Here, we provide a theoretical description of electron-transfer phenomena based on electron-transfer theory, which allows us to provide a molecular, chemically-oriented understanding. In this presentation, we focus on the parameters that impact the mobility of charge carriers [2], that is the electronic coupling within chains and between adjacent chains and the reorganization energy of the chains upon ionization. Materials under study include conjugated oligomers such as oligoacenes, oligothiophene-acenes, oligothiophenes, and oligothienacenes. [1] J.L. Br'edas, D. Beljonne, V. Coropceanu, and J. Cornil, ``Charge-Transfer and Energy-Transfer Processes in pi-Conjugated Oligomers and Polymers'', Chemical Reviews, 104, 4971-5004 (2004). [2] V. Coropceanu, J. Cornil, D.A. da Silva Filho, Y. Olivier, R. Silbey, and J.L. Br'edas, ``Charge Transport in Organic Semiconductors'', Chemical Reviews, 107, xxx (2007).

  13. Raman scattering studies and charge transport in polyfluorenes

    NASA Astrophysics Data System (ADS)

    Arif, Mohammad Ali Iftekhar

    Organic semiconductors, such as short-chain oligomers and long-chain polymers, are now a core constituent in numerous organic and organic-inorganic hybrid technologies. Blue-emitting polyfluorenes (PFs) have emerged as especially attractive pi conjugated polymers (CP) due to their high luminescence efficiency and excellent electronic properties and thus great prospects for device applications. The performance of devices based on these polymers depends on side chain conformations, overall crystalline structure, and charge transport processes at the microscopic level. This project entails detailed Raman scattering studies and charge transport properties of two side chain substituted PFs: Poly(2,7-[9,9'-bis(2-ethylhexyl)] fluorene) (PF2/6) and Poly(9,9-(di-n,n-octyl) fluorene) (PF8). The structural properties of PFs are extremely sensitive to the choice of functionalizing side chains. PF8 adopts metastable structures that depend upon the thermal history and choice of solvents used in film forming conditions. Raman scattering techniques as a function of thermal cycling are used to monitor the changes in the backbone and side chain morphology of PF8. These studies establish a correlation between the conformational isomers and the side and main chain morphology. Theoretical modeling of the vibrational spectra of single chain oligomers in conjunction with the experimental results demonstrate the incompatibility of the beta phase, a low energy emitting chromophore, with the overall crystalline phase in PF8. Further, electroluminescence and photoluminescence measurements from PF-based light-emitting diodes (LEDs) are presented and discussed in terms of the crystalline phases and chain morphologies in the PFs. Charge carrier injection and transport properties of PF-based LEDs are presented using current-voltage (I--V) characteristic which is modeled by a space-charge-limited conduction (SCLC) for discrete and continuous traps. PF2/6 with a high level of molecular disorder is

  14. Hall effect and band-like carrier transport in high mobility polymer transistors

    NASA Astrophysics Data System (ADS)

    Yamashita, Yu; Hinkel, Felix; Marszalek, Tomasz; Zajaczkowski, Wojciech; Pisula, Wojciech; Baumgarten, Martin; Matsui, Hiroyuki; Müllen, Klaus; Takeya, Jun; Takeya Group Team, Prof.; Müllen Group Team, Prof.

    A microscopic understanding of charge carrier transport in polymeric semiconductors is essential to improve the state of the art of flexible or printed electronic devices. In particular, thin-film field-effect transistors based on donor-acceptor polymers are in the focus of current literature reaching high charge-carrier mobility. In this work, we demonstrate the Hall effect and the temperature dependence of the charge carrier mobility based on uniaxially ordered CDT-BTZ donor-acceptor copolymer films. Uniaxially ordered films of CDT-BTZ with hexadecyl (C16) and eicosyl (C20) sidechains showed mobility of 5.6 cm2/Vs and 11.4 cm2/Vs respectively. The activation energy of the mobility decreased with the increasing carrier density, and finally the negative temperature dependence of the mobility was observed. Both polymers showed Hall effect, which also indicates the presence of extended electronic states. The temperature and carrier density dependence will be further discussed in the presentation.

  15. Interfacial Study To Suppress Charge Carrier Recombination for High Efficiency Perovskite Solar Cells.

    PubMed

    Adhikari, Nirmal; Dubey, Ashish; Khatiwada, Devendra; Mitul, Abu Farzan; Wang, Qi; Venkatesan, Swaminathan; Iefanova, Anastasiia; Zai, Jiantao; Qian, Xuefeng; Kumar, Mukesh; Qiao, Qiquan

    2015-12-09

    We report effects of an interface between TiO2-perovskite and grain-grain boundaries of perovskite films prepared by single step and sequential deposited technique using different annealing times at optimum temperature. Nanoscale kelvin probe force microscopy (KPFM) measurement shows that charge transport in a perovskite solar cell critically depends upon the annealing conditions. The KPFM results of single step and sequential deposited films show that the increase in potential barrier suppresses the back-recombination between electrons in TiO2 and holes in perovskite. Spatial mapping of the surface potential within perovskite film exhibits higher positive potential at grain boundaries compared to the surface of the grains. The average grain boundary potential of 300-400 mV is obtained upon annealing for sequentially deposited films. X-ray diffraction (XRD) spectra indicate the formation of a PbI2 phase upon annealing which suppresses the recombination. Transient analysis exhibits that the optimum device has higher carrier lifetime and short carrier transport time among all devices. An optimum grain boundary potential and proper band alignment between the TiO2 electron transport layer (ETL) and the perovskite absorber layer help to increase the overall device performance.

  16. Transport-reaction model for defect and carrier behavior within displacement cascades in gallium arsenide

    SciTech Connect

    Wampler, William R.; Myers, Samuel M.

    2014-02-01

    A model is presented for recombination of charge carriers at displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers and defects within a representative spherically symmetric cluster. The initial radial defect profiles within the cluster were chosen through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Charging of the defects can produce high electric fields within the cluster which may influence transport and reaction of carriers and defects, and which may enhance carrier recombination through band-to-trap tunneling. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to pulsed neutron irradiation.

  17. Effect of film nanostructure on in-plane charge transport in organic bulk heterojunction materials

    NASA Astrophysics Data System (ADS)

    Danielson, Eric; Ooi, Zi-En; Dodabalapur, Ananth

    2013-09-01

    Bulk heterojunction (BHJ) organic solar cells are a promising alternative energy technology, but a thorough understanding of charge transport behavior in BHJ materials is necessary in order to design devices with high power conversion efficiencies. Parameters such as carrier mobilities, carrier concentrations, and the recombination coefficient have traditionally been successfully measured using vertical structures similar to organic photovoltaic (OPV) cells. We have developed a lateral BHJ device which complements these vertical techniques by allowing spatially resolved measurement along the transport direction of charge carriers. This is essential for evaluating the effect of nanoscale structure and morphology on these important charge transport parameters. Nanomorphology in organic BHJ films has been controlled using a variety of methods, but the effect of these procedures has been infrequently correlated with the charge transport parameter of the BHJ material. Electron beam lithography has been used to create lateral device structures with many voltage probes at a sub-micron resolution throughout the device channel. By performing in-situ potentiometry, we can calculate both carrier mobilities and determine the effect of solvent choice and annealing procedure on the charge transport in BHJ system. Spin coated P3HT:PCBM films prepared from solutions in chloroform and o-xylene are characterized using this technique.

  18. The nature of free-carrier transport in organometal halide perovskites

    NASA Astrophysics Data System (ADS)

    Hakamata, Tomoya; Shimamura, Kohei; Shimojo, Fuyuki; Kalia, Rajiv K.; Nakano, Aiichiro; Vashishta, Priya

    2016-01-01

    Organometal halide perovskites are attracting great attention as promising material for solar cells because of their high power conversion efficiency. The high performance has been attributed to the existence of free charge carriers and their large diffusion lengths, but the nature of carrier transport at the atomistic level remains elusive. Here, nonadiabatic quantum molecular dynamics simulations elucidate the mechanisms underlying the excellent free-carrier transport in CH3NH3PbI3. Pb and I sublattices act as disjunct pathways for rapid and balanced transport of photoexcited electrons and holes, respectively, while minimizing efficiency-degrading charge recombination. On the other hand, CH3NH3 sublattice quickly screens out electrostatic electron-hole attraction to generate free carriers within 1 ps. Together this nano-architecture lets photoexcited electrons and holes dissociate instantaneously and travel far away to be harvested before dissipated as heat. This work provides much needed structure-property relationships and time-resolved information that potentially lead to rational design of efficient solar cells.

  19. Hybrid-Type Organic Thermoelectric Materials Containing Nanoparticles as a Carrier Transport Promoter

    NASA Astrophysics Data System (ADS)

    Oshima, Keisuke; Inoue, Junta; Sadakata, Shifumi; Shiraishi, Yukihide; Toshima, Naoki

    2016-08-01

    Carbon nanotubes (CNTs) have recently received much attention as thermoelectric materials. Although the carrier mobility within a single CNT is very high, the charge carrier transport between CNTs is quite slow. We have utilized nanoparticles (NPs) for promotion of the carrier transport between CNTs for improving their thermoelectric performance. Poly(vinyl chloride) (PVC) was used as a binder of the CNTs. Thus, hybrid-type organic thermoelectric materials containing the NPs were constructed from Pd NPs, CNTs, and PVC. The thermoelectric properties were slightly improved in the three-component films by only mixing the separately-prepared Pd NPs. The NPs of a polymer complex, poly(nickel 1,1,2,2-ethenetetrathiolate) (n-PETT), were also used as a charge carrier transport promoter instead of the Pd NPs to produce n-PETT/CNT/PVC hybrid films. Treatment of the three-component films with methanol produced a high thermoelectric power factor and low thermal conductivity, resulting in a high "apparent" thermoelectric performance (ZT ˜ 0.3 near room temperature) although the thermal conductivity was measured in the through-plane direction, which is a different direction from that for the electrical conductivity.

  20. The nature of free-carrier transport in organometal halide perovskites

    PubMed Central

    Hakamata, Tomoya; Shimamura, Kohei; Shimojo, Fuyuki; Kalia, Rajiv K.; Nakano, Aiichiro; Vashishta, Priya

    2016-01-01

    Organometal halide perovskites are attracting great attention as promising material for solar cells because of their high power conversion efficiency. The high performance has been attributed to the existence of free charge carriers and their large diffusion lengths, but the nature of carrier transport at the atomistic level remains elusive. Here, nonadiabatic quantum molecular dynamics simulations elucidate the mechanisms underlying the excellent free-carrier transport in CH3NH3PbI3. Pb and I sublattices act as disjunct pathways for rapid and balanced transport of photoexcited electrons and holes, respectively, while minimizing efficiency-degrading charge recombination. On the other hand, CH3NH3 sublattice quickly screens out electrostatic electron-hole attraction to generate free carriers within 1 ps. Together this nano-architecture lets photoexcited electrons and holes dissociate instantaneously and travel far away to be harvested before dissipated as heat. This work provides much needed structure-property relationships and time-resolved information that potentially lead to rational design of efficient solar cells. PMID:26781627

  1. The nature of free-carrier transport in organometal halide perovskites

    SciTech Connect

    Hakamata, Tomoya; Shimamura, Kohei; Shimojo, Fuyuki; Kalia, Rajiv K.; Nakano, Aiichiro; Vashishta, Priya

    2016-01-19

    Organometal halide perovskites are attracting great attention as promising material for solar cells because of their high power conversion efficiency. The high performance has been attributed to the existence of free charge carriers and their large diffusion lengths, but the nature of carrier transport at the atomistic level remains elusive. Here, nonadiabatic quantum molecular dynamics simulations elucidate the mechanisms underlying the excellent free-carrier transport in CH3NH3PbI3. Pb and I sublattices act as disjunct pathways for rapid and balanced transport of photoexcited electrons and holes, respectively, while minimizing efficiency-degrading charge recombination. On the other hand, CH3NH3 sublattice quickly screens out electrostatic electron-hole attraction to generate free carriers within 1 ps. Together this nano-architecture lets photoexcited electrons and holes dissociate instantaneously and travel far away to be harvested before dissipated as heat. As a result, this work provides much needed structure-property relationships and time-resolved information that potentially lead to rational design of efficient solar cells.

  2. The nature of free-carrier transport in organometal halide perovskites

    DOE PAGES

    Hakamata, Tomoya; Shimamura, Kohei; Shimojo, Fuyuki; ...

    2016-01-19

    Organometal halide perovskites are attracting great attention as promising material for solar cells because of their high power conversion efficiency. The high performance has been attributed to the existence of free charge carriers and their large diffusion lengths, but the nature of carrier transport at the atomistic level remains elusive. Here, nonadiabatic quantum molecular dynamics simulations elucidate the mechanisms underlying the excellent free-carrier transport in CH3NH3PbI3. Pb and I sublattices act as disjunct pathways for rapid and balanced transport of photoexcited electrons and holes, respectively, while minimizing efficiency-degrading charge recombination. On the other hand, CH3NH3 sublattice quickly screens out electrostaticmore » electron-hole attraction to generate free carriers within 1 ps. Together this nano-architecture lets photoexcited electrons and holes dissociate instantaneously and travel far away to be harvested before dissipated as heat. As a result, this work provides much needed structure-property relationships and time-resolved information that potentially lead to rational design of efficient solar cells.« less

  3. Anomalous charge transport in CeB{sub 6}

    SciTech Connect

    Ignatov, M.I. . E-mail: ignatov@lt.gpi.ru; Bogach, A.V.; Demishev, S.V.; Glushkov, V.V.; Levchenko, A.V.; Paderno, Yu.B.; Shitsevalova, N.Yu.; Sluchanko, N.E.

    2006-09-15

    The comprehensive study of conductivity {sigma}, Hall coefficient R{sub H} and Seebeck coefficient S has been carried out on high-quality single crystals of CeB{sub 6} in a wide range of temperatures 1.8-300K. An anomalous behavior of all transport characteristics ({sigma}, R{sub H}, S) was found for the first time in the vicinity of T*{approx}80K. The strong decrease of conductivity {sigma} as well as the unusual asymptotic behavior of Seebeck coefficient S(T){approx}-lnT observed below T* allowed us to conclude in favor of crossover between different regimes of charge transport in CeB{sub 6}. The pronounced change of Hall mobility {mu}{sub H}, which diminishes from the maximum value of 20cm{sup 2}/(Vs) at T* to the values of {approx}6cm{sup 2}/(Vs) at T{approx}10K, seems to be attributed to the strong enhancement of charge carriers scattering due to fast spin fluctuations on Ce-sites. The low-temperature anomalies of the charge transport characteristics are compared with the predictions of the Kondo-lattice model.

  4. Charge transport through molecular rods with reduced pi-conjugation.

    PubMed

    Lörtscher, Emanuel; Elbing, Mark; Tschudy, Meinrad; von Hänisch, Carsten; Weber, Heiko B; Mayor, Marcel; Riel, Heike

    2008-10-24

    A series of oligophenylene rods of increasing lengths is synthesized to investigate the charge-transport mechanisms. Methyl groups are attached to the phenyl rings to weaken the electronic overlap of the pi-subsystems along the molecular backbones. Out-of-plane rotation of the phenyl rings is confirmed in the solid state by means of X-ray analysis and in solution by using UV/Vis spectroscopy. The influence of the reduced pi-conjugation on the resonant charge transport is studied at the single-molecule level by using the mechanically controllable break-junction technique. Experiments are performed under ultra-high-vacuum conditions at low temperature (50 K). A linear increase of the conductance gap with increasing number of phenyl rings (from 260 meV for one ring to 580 meV for four rings) is revealed. In addition, the absolute conductance of the first resonant peaks does not depend on the length of the molecular wire. Resonant transport through the first molecular orbital is found to be dominated by charge-carrier injection into the molecule, rather than by the intrinsic resistance of the molecular wire length.

  5. Understanding Charge Transport in Mixed Networks of Semiconducting Carbon Nanotubes

    PubMed Central

    2016-01-01

    The ability to select and enrich semiconducting single-walled carbon nanotubes (SWNT) with high purity has led to a fast rise of solution-processed nanotube network field-effect transistors (FETs) with high carrier mobilities and on/off current ratios. However, it remains an open question whether it is best to use a network of only one nanotube species (monochiral) or whether a mix of purely semiconducting nanotubes but with different bandgaps is sufficient for high performance FETs. For a range of different polymer-sorted semiconducting SWNT networks, we demonstrate that a very small amount of narrow bandgap nanotubes within a dense network of large bandgap nanotubes can dominate the transport and thus severely limit on-currents and effective carrier mobility. Using gate-voltage-dependent electroluminescence, we spatially and spectrally reveal preferential charge transport that does not depend on nominal network density but on the energy level distribution within the network and carrier density. On the basis of these results, we outline rational guidelines for the use of mixed SWNT networks to obtain high performance FETs while reducing the cost for purification. PMID:26867006

  6. Thermally activated charge transport in microbial protein nanowires

    NASA Astrophysics Data System (ADS)

    Lampa-Pastirk, Sanela; Veazey, Joshua P.; Walsh, Kathleen A.; Feliciano, Gustavo T.; Steidl, Rebecca J.; Tessmer, Stuart H.; Reguera, Gemma

    2016-03-01

    The bacterium Geobacter sulfurreducens requires the expression of conductive protein filaments or pili to respire extracellular electron acceptors such as iron oxides and uranium and to wire electroactive biofilms, but the contribution of the protein fiber to charge transport has remained elusive. Here we demonstrate efficient long-range charge transport along individual pili purified free of metal and redox organic cofactors at rates high enough to satisfy the respiratory rates of the cell. Carrier characteristics were within the orders reported for organic semiconductors (mobility) and inorganic nanowires (concentration), and resistivity was within the lower ranges reported for moderately doped silicon nanowires. However, the pilus conductance and the carrier mobility decreased when one of the tyrosines of the predicted axial multistep hopping path was replaced with an alanine. Furthermore, low temperature scanning tunneling microscopy demonstrated the thermal dependence of the differential conductance at the low voltages that operate in biological systems. The results thus provide evidence for thermally activated multistep hopping as the mechanism that allows Geobacter pili to function as protein nanowires between the cell and extracellular electron acceptors.

  7. Thermally activated charge transport in microbial protein nanowires.

    PubMed

    Lampa-Pastirk, Sanela; Veazey, Joshua P; Walsh, Kathleen A; Feliciano, Gustavo T; Steidl, Rebecca J; Tessmer, Stuart H; Reguera, Gemma

    2016-03-24

    The bacterium Geobacter sulfurreducens requires the expression of conductive protein filaments or pili to respire extracellular electron acceptors such as iron oxides and uranium and to wire electroactive biofilms, but the contribution of the protein fiber to charge transport has remained elusive. Here we demonstrate efficient long-range charge transport along individual pili purified free of metal and redox organic cofactors at rates high enough to satisfy the respiratory rates of the cell. Carrier characteristics were within the orders reported for organic semiconductors (mobility) and inorganic nanowires (concentration), and resistivity was within the lower ranges reported for moderately doped silicon nanowires. However, the pilus conductance and the carrier mobility decreased when one of the tyrosines of the predicted axial multistep hopping path was replaced with an alanine. Furthermore, low temperature scanning tunneling microscopy demonstrated the thermal dependence of the differential conductance at the low voltages that operate in biological systems. The results thus provide evidence for thermally activated multistep hopping as the mechanism that allows Geobacter pili to function as protein nanowires between the cell and extracellular electron acceptors.

  8. Thermally activated charge transport in microbial protein nanowires

    PubMed Central

    Lampa-Pastirk, Sanela; Veazey, Joshua P.; Walsh, Kathleen A.; Feliciano, Gustavo T.; Steidl, Rebecca J.; Tessmer, Stuart H.; Reguera, Gemma

    2016-01-01

    The bacterium Geobacter sulfurreducens requires the expression of conductive protein filaments or pili to respire extracellular electron acceptors such as iron oxides and uranium and to wire electroactive biofilms, but the contribution of the protein fiber to charge transport has remained elusive. Here we demonstrate efficient long-range charge transport along individual pili purified free of metal and redox organic cofactors at rates high enough to satisfy the respiratory rates of the cell. Carrier characteristics were within the orders reported for organic semiconductors (mobility) and inorganic nanowires (concentration), and resistivity was within the lower ranges reported for moderately doped silicon nanowires. However, the pilus conductance and the carrier mobility decreased when one of the tyrosines of the predicted axial multistep hopping path was replaced with an alanine. Furthermore, low temperature scanning tunneling microscopy demonstrated the thermal dependence of the differential conductance at the low voltages that operate in biological systems. The results thus provide evidence for thermally activated multistep hopping as the mechanism that allows Geobacter pili to function as protein nanowires between the cell and extracellular electron acceptors. PMID:27009596

  9. Transport in charged colloids driven by thermoelectricity.

    PubMed

    Würger, Alois

    2008-09-05

    We study the thermal diffusion coefficient D{T} of a charged colloid in a temperature gradient, and find that it is to a large extent determined by the thermoelectric response of the electrolyte solution. The thermally induced salinity gradient leads in general to a strong increase with temperature. The difference of the heat of transport of coions and counterions gives rise to a thermoelectric field that drives the colloid to the cold or to the warm, depending on the sign of its charge. Our results provide an explanation for recent experimental findings on thermophoresis in colloidal suspensions.

  10. Lysosomal solute carrier transporters gain momentum in research.

    PubMed

    Bissa, B; Beedle, A M; Govindarajan, R

    2016-11-01

    Emerging evidence indicates that lysosome function extends beyond macromolecular degradation. Genetic and functional defects in components of the lysosomal transport machinery cause lysosomal storage disorders implicating the lysosomal solute carrier (SLC) transporters as essential to vital cell processes. The pathophysiology and therapeutic potential of lysosomal SLC transporters are highlighted here, focusing on recent discoveries in autophagic amino acid sensing (SLC38A9), phagocytic regulation in macrophages (SLC29A3, SLC15A3/A4), adenosine triphosphate (ATP) exocytosis in neurotransmission (SLC17A9), and lysosomal transport of maytansine catabolites into the cytoplasm (SLC46A3).

  11. Lysosomal solute carrier transporters gain momentum in research

    PubMed Central

    Beedle, AM; Govindarajan, R

    2016-01-01

    Emerging evidence indicates that lysosome function extends beyond macromolecular degradation. Genetic and functional defects in components of the lysosomal transport machinery cause lysosomal storage disorders implicating the lysosomal solute carrier (SLC) transporters as essential to vital cell processes. The pathophysiology and therapeutic potential of lysosomal SLC transporters are highlighted here, focusing on recent discoveries in autophagic amino acid sensing (SLC38A9), phagocytic regulation in macrophages (SLC29A3, SLC15A3/A4), adenosine triphosphate (ATP) exocytosis in neurotransmission (SLC17A9), and lysosomal transport of maytansine catabolites into the cytoplasm (SLC46A3). PMID:27530302

  12. Stacking dependence of carrier transport properties in multilayered black phosphorous.

    PubMed

    Sengupta, A; Audiffred, M; Heine, T; Niehaus, T A

    2016-02-24

    We present the effect of different stacking orders on carrier transport properties of multi-layer black phosphorous. We consider three different stacking orders AAA, ABA and ACA, with increasing number of layers (from 2 to 6 layers). We employ a hierarchical approach in density functional theory (DFT), with structural simulations performed with generalized gradient approximation (GGA) and the bandstructure, carrier effective masses and optical properties evaluated with the meta-generalized gradient approximation (MGGA). The carrier transmission in the various black phosphorous sheets was carried out with the non-equilibrium green's function (NEGF) approach. The results show that ACA stacking has the highest electron and hole transmission probabilities. The results show tunability for a wide range of band-gaps, carrier effective masses and transmission with a great promise for lattice engineering (stacking order and layers) in black phosphorous.

  13. Stacking dependence of carrier transport properties in multilayered black phosphorous

    NASA Astrophysics Data System (ADS)

    Sengupta, A.; Audiffred, M.; Heine, T.; Niehaus, T. A.

    2016-02-01

    We present the effect of different stacking orders on carrier transport properties of multi-layer black phosphorous. We consider three different stacking orders AAA, ABA and ACA, with increasing number of layers (from 2 to 6 layers). We employ a hierarchical approach in density functional theory (DFT), with structural simulations performed with generalized gradient approximation (GGA) and the bandstructure, carrier effective masses and optical properties evaluated with the meta-generalized gradient approximation (MGGA). The carrier transmission in the various black phosphorous sheets was carried out with the non-equilibrium green’s function (NEGF) approach. The results show that ACA stacking has the highest electron and hole transmission probabilities. The results show tunability for a wide range of band-gaps, carrier effective masses and transmission with a great promise for lattice engineering (stacking order and layers) in black phosphorous.

  14. On the nature of high field charge transport in reinforced silicone dielectrics: Experiment and simulation

    NASA Astrophysics Data System (ADS)

    Huang, Yanhui; Schadler, Linda S.

    2016-08-01

    The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field and were compared with the properties of other dielectric polymers. It is argued that the energy and spatial distribution of localized electronic states are crucial in determining these properties for polymer dielectrics. Tunneling to localized states likely dominates the charge injection process. A transient transport regime arises due to the relaxation of charge carriers into deep traps at the energy band tails and is successfully verified by a Monte Carlo simulation using the multiple-hopping model. The charge carrier mobility is found to be highly heterogeneous due to the non-uniform trapping. The slow moving electron packet exhibits a negative field dependent drift velocity possibly due to the spatial disorder of traps.

  15. Extra domains in secondary transport carriers and channel proteins.

    PubMed

    Barabote, Ravi D; Tamang, Dorjee G; Abeywardena, Shannon N; Fallah, Neda S; Fu, Jeffrey Yu Chung; Lio, Jeffrey K; Mirhosseini, Pegah; Pezeshk, Ronnie; Podell, Sheila; Salampessy, Marnae L; Thever, Mark D; Saier, Milton H

    2006-10-01

    "Extra" domains in members of the families of secondary transport carrier and channel proteins provide secondary functions that expand, amplify or restrict the functional nature of these proteins. Domains in secondary carriers include TrkA and SPX domains in DASS family members, DedA domains in TRAP-T family members (both of the IT superfamily), Kazal-2 and PDZ domains in OAT family members (of the MF superfamily), USP, IIA(Fru) and TrkA domains in ABT family members (of the APC superfamily), ricin domains in OST family members, and TrkA domains in AAE family members. Some transporters contain highly hydrophilic domains consisting of multiple repeat units that can also be found in proteins of dissimilar function. Similarly, transmembrane alpha-helical channel-forming proteins contain unique, conserved, hydrophilic domains, most of which are not found in carriers. In some cases the functions of these domains are known. They may be ligand binding domains, phosphorylation domains, signal transduction domains, protein/protein interaction domains or complex carbohydrate-binding domains. These domains mediate regulation, subunit interactions, or subcellular targeting. Phylogenetic analyses show that while some of these domains are restricted to closely related proteins derived from specific organismal types, others are nearly ubiquitous within a particular family of transporters and occur in a tremendous diversity of organisms. The former probably became associated with the transporters late in the evolutionary process; the latter probably became associated with the carriers much earlier. These domains can be located at either end of the transporter or in a central region, depending on the domain and transporter family. These studies provide useful information about the evolution of extra domains in channels and secondary carriers and provide novel clues concerning function.

  16. Carrier Transport and Related Effects in Detectors of the Cryogenic Dark Matter Search

    SciTech Connect

    Sundqvist, Kyle Michael

    2012-01-01

    The Cryogenic Dark Matter Search (CDMS) is searching for weakly-interacting massive particles (WIMPS), which could explain the dark matter problem in cosmology and particle physics. By simultaneously measuring signals from deposited charge and the energy in nonequilibrium phonons created by particle interactions in intrinsic germanium crystals at a temperature of 40 mK, a signature response for each event is produced. This response, combined with phonon pulse-shape information, allows CDMS to actively discriminate candidate WIMP interactions with nuclei from electromagnetic radioactive background which interacts with electrons. The challenges associated with these techniques are unique. Carrier scattering is dominated by the spontaneous emission of Luke-Neganov phonons due to zeropoint fluctuations of the lattice ions. Drift fields are maintained at only a few V/cm, else these emitted phonons would dominate the phonons of the original interaction. The dominant systematic issues with CDMS detectors are due to the effects of space charge accumulation. It has been an open question how space charge accrues, and by which of several potential recombination and ionization processes. In this work, we have simulated the transport of electrons and holes in germanium under CDMS conditions. We have implemented both a traditional Monte Carlo technique based on carrier energy, followed later by a novel Monte Carlo algorithm with scattering rates defined and sampled by vector momentum. This vector-based method provides for a full anisotropic simulation of carrier transport including free-fight acceleration with an anisotropic mass, and anisotropic scattering rates. With knowledge of steady state carrier dynamics as a function of applied field, the results of our Monte Carlo simulations allow us to make a wide variety of predictions for energy dependent processes for both electrons and holes. Such processes include carrier capture by charged impurities, neutral impurities, static

  17. Airline Transport Pilot-Airplane (Air Carrier) Written Test Guide.

    ERIC Educational Resources Information Center

    Federal Aviation Administration (DOT), Washington, DC. Flight Standards Service.

    Presented is information useful to applicants who are preparing for the Airline Transport Pilot-Airplane (Air Carrier) Written Test. The guide describes the basic aeronautical knowledge and associated requirements for certification, as well as information on source material, instructions for taking the official test, and questions that are…

  18. Variational multiscale models for charge transport

    PubMed Central

    Wei, Guo-Wei; Zheng, Qiong; Chen, Zhan; Xia, Kelin

    2012-01-01

    This work presents a few variational multiscale models for charge transport in complex physical, chemical and biological systems and engineering devices, such as fuel cells, solar cells, battery cells, nanofluidics, transistors and ion channels. An essential ingredient of the present models, introduced in an earlier paper (Bulletin of Mathematical Biology, 72, 1562-1622, 2010), is the use of differential geometry theory of surfaces as a natural means to geometrically separate the macroscopic domain from the microscopic domain, meanwhile, dynamically couple discrete and continuum descriptions. Our main strategy is to construct the total energy functional of a charge transport system to encompass the polar and nonpolar free energies of solvation, and chemical potential related energy. By using the Euler-Lagrange variation, coupled Laplace-Beltrami and Poisson-Nernst-Planck (LB-PNP) equations are derived. The solution of the LB-PNP equations leads to the minimization of the total free energy, and explicit profiles of electrostatic potential and densities of charge species. To further reduce the computational complexity, the Boltzmann distribution obtained from the Poisson-Boltzmann (PB) equation is utilized to represent the densities of certain charge species so as to avoid the computationally expensive solution of some Nernst-Planck (NP) equations. Consequently, the coupled Laplace-Beltrami and Poisson-Boltzmann-Nernst-Planck (LB-PBNP) equations are proposed for charge transport in heterogeneous systems. A major emphasis of the present formulation is the consistency between equilibrium LB-PB theory and non-equilibrium LB-PNP theory at equilibrium. Another major emphasis is the capability of the reduced LB-PBNP model to fully recover the prediction of the LB-PNP model at non-equilibrium settings. To account for the fluid impact on the charge transport, we derive coupled Laplace-Beltrami, Poisson-Nernst-Planck and Navier-Stokes equations from the variational principle

  19. Charge transport and injection in amorphous organic electronic materials

    NASA Astrophysics Data System (ADS)

    Tse, Shing Chi

    This thesis presents how we use various measuring techniques to study the charge transport and injection in organic electronic materials. Understanding charge transport and injection properties in organic solids is of vital importance for improving performance characteristics of organic electronic devices, including organic-light-emitting diodes (OLEDs), photovoltaic cells (OPVs), and field effect transistors (OFETs). The charge transport properties of amorphous organic materials, commonly used in organic electronic devices, are investigated by the means of carrier mobility measurements. Transient electroluminescence (EL) technique was used to evaluate the electron mobility of an electron transporting material--- tris(8-hydroxyquinoline) aluminum (Alq3). The results are in excellent agreement with independent time-of-flight (TOF) measurements. Then, the effect of dopants on electron transport was also examined. TOF technique was also used to examine the effects of tertiary-butyl (t-Bu) substitutions on anthracene derivatives (ADN). All ADN compounds were found to be ambipolar. As the degree of t-Bu substitution increases, the carrier mobilities decrease progressively. The reduction of carrier mobilities with increasing t-butylation can be attributed to a decrease in the charge-transfer integral or the wavefunction overlap. In addition, from TOF measurements, two naphthylamine-based hole transporters, namely, N,N'-diphenyl-N,N'-bis(1-naphthyl)(1,1'-biphenyl)-4,4'diamine (NPB) and 4,4',4"-tris(n-(2-naphthyl)-n-phenyl-amino)-triphenylamine (2TNATA) were found to possess electron-transporting (ET) abilities. An organic light-emitting diode that employed NPB as the ET material was demonstrated. The electron conducting mechanism of NPB and 2TNATA in relation to the hopping model will be discussed. Furthermore, the ET property of NPB applied in OLEDs will also be examined. Besides transient EL and TOF techniques, we also use dark-injection space-charge-limited current

  20. Charge Transport in Conjugated Block Copolymers

    NASA Astrophysics Data System (ADS)

    Smith, Brandon; Le, Thinh; Lee, Youngmin; Gomez, Enrique

    Interest in conjugated block copolymers for high performance organic photovoltaic applications has increased considerably in recent years. Polymer/fullerene mixtures for conventional bulk heterojunction devices, such as P3HT:PCBM, are severely limited in control over interfaces and domain length scales. In contrast, microphase separated block copolymers self-assemble to form lamellar morphologies with alternating electron donor and acceptor domains, thereby maximizing electronic coupling and local order at interfaces. Efficiencies as high as 3% have been reported in solar cells for one block copolymer, P3HT-PFTBT, but the details concerning charge transport within copolymers have not been explored. To fill this gap, we probed the transport characteristics with thin-film transistors. Excellent charge mobility values for electron transport have been observed on aluminum source and drain contacts in a bottom gate, bottom contact transistor configuration. Evidence of high mobility in ordered PFTBT phases has also been obtained following thermal annealing. The insights gleaned from our investigation serve as useful guideposts, revealing the significance of the interplay between charge mobility, interfacial order, and optimal domain size in organic block copolymer semiconductors.

  1. A two-scale method for fast estimation of the charge-carrier diffusion coefficient in nano-porous semi-conductors

    NASA Astrophysics Data System (ADS)

    Ebrahimi, Fatemeh; Koochi, Hakimeh

    2017-01-01

    Current numerical methods that simultaneously take into account both spatial and energy disorders in charge-carrier transport in semi-conductor nano-porous structures are exact but involve intensive computations. Here, we will describe a two-scale simulation approach that incorporates all the relevant data on the morphology as well as the microscopic transport model. To test this method, we carried out extensive computer simulations for estimation of the charge-carrier diffusion coefficient in structures of different local and global morphologies. Excellent agreement was found between the results of our proposed model and the results emerged from full-scale calculations. The speed-up in the computations is almost four orders of magnitude. As such, this method provides us with a fast and straightforward approach to separate the role of local and global morphology on the charge-carrier transport and hence might be helpful in future designing of devices like dye-sensitized solar cells.

  2. Field dependent thermoelectric properties of organic semiconductors—A tool to determine the nature of charge transport in materials exhibiting thermally activated transport

    NASA Astrophysics Data System (ADS)

    Mendels, Dan; Tessler, Nir

    2015-03-01

    By implementing Monte Carlo simulations and employing the concept of effective temperature, we explore the effects of an applied field bias on the charge carrier statistics and Peltier coefficient in hopping systems subject to the parameter range applicable to disordered organic semiconductors. Distinct differences are found between the observed field dependences as obtained from systems in which energetic disorder is spatially correlated and those in which it is not. Considerable differences are also found between the charge carrier statistics and the Peltier coefficient's field dependence in systems in which charge is transported by bare charge carriers and systems in which it is propagated by polarons. Peltier coefficient field dependence investigations are, hence, proposed as a new tool for studying charge transport and thermoelectricity in disordered organic semiconductors and systems which exhibit thermally activated transport in general.

  3. Dust Charging and Transport on Surfaces

    SciTech Connect

    Wang, X.; Robertson, S.; Horanyi, M.

    2011-11-29

    In this paper, we review laboratory studies of dust transport on surfaces in plasmas, performed for a number of different mechanisms: 1) Dust particles were levitated in plasma sheaths by electrostatic forces balancing the gravitational force. 2) Dust was observed to spread over and lift off a surface that repels electrons in a plasma. 3) Dust was transported on surfaces having different secondary electron yields in plasma with an electron beam as a consequence of differential charging. 4) We also report a mechanism of dust transport by electric fields occurring at electron beam impact/shadow boundaries. These processes are candidates to explain the formation of dust ponds that were recently observed in craters on the asteroid Eros by the NEAR Shoemaker spacecraft.

  4. Temperature dependence of exciton and charge carrier dynamics in organic thin films

    NASA Astrophysics Data System (ADS)

    Platt, A. D.; Kendrick, M. J.; Loth, M.; Anthony, J. E.; Ostroverkhova, O.

    2011-12-01

    -TES-F films. In ADT-TES-F/ADT-TIPS-CN (2%) blends, an additional charge carrier photogeneration component was observed at room temperature at time scales of ˜20 ns due to exciplex dissociation. At ˜0.5-5 ns after photoexcitation, the carriers propagated via thermally and electric-field-activated hopping with an activation energy of ˜0.025 eV. At time scales longer than ˜5 ns, charge transport of carriers that are not frozen in traps proceeded through tunneling via isoenergetic sites.

  5. Charge Transport and Glassy Dynamics in Ionic Liquids

    SciTech Connect

    Sangoro, Joshua R; Kremer, Friedrich

    2012-01-01

    Ionic liquids (ILs) exhibit unique features such as low melting points, low vapor pressures, wide liquidus temperature ranges, high thermal stability, high ionic conductivity, and wide electrochemical windows. As a result, they show promise for use in variety of applications: as reaction media, in batteries and supercapacitors, in solar and fuel cells, for electrochemical deposition of metals and semiconductors, for protein extraction and crystallization, and many others. Because of the ease with which they can be supercooled, ionic liquids offer new opportunities to investigate long-standing questions regarding the nature of the dynamic glass transition and its possible link to charge transport. Despite the significant steps achieved from experimental and theoretical studies, no generally accepted quantitative theory of dynamic glass transition to date has been capable of reproducing all the experimentally observed features. In this Account, we discuss recent studies of the interplay between charge transport and glassy dynamics in ionic liquids as investigated by a combination of several experimental techniques including broadband dielectric spectroscopy, pulsed field gradient nuclear magnetic resonance, dynamic mechanical spectroscopy, and differential scanning calorimetry. Based on EinsteinSmoluchowski relations, we use dielectric spectra of ionic liquids to determine diffusion coefficients in quantitative agreement with independent pulsed field gradient nuclear magnetic resonance measurements, but spanning a broader range of more than 10 orders of magnitude. This approach provides a novel opportunity to determine the electrical mobility and effective number density of charge carriers as well as their types of thermal activation from the measured dc conductivity separately. We also unravel the origin of the remarkable universality of charge transport in different classes of glass-forming ionic liquids.

  6. Charge transport in polycrystalline silicon thin-films on glass substrates

    NASA Astrophysics Data System (ADS)

    Scheller, L.-P.; Nickel, N. H.

    2012-07-01

    Charge carrier transport in solid-phase crystallized polycrystalline silicon (poly-Si) was investigated as a function of the deposition temperature, Td, the amorphous starting material and the used substrates. The samples were characterized using temperature dependent transport measurements to determine the carrier concentration, mobility, and conductivity. Samples prepared on a-SiN:H covered borofloat glass exhibit a low carrier concentration that is independent of Td. In these samples, charge transport is dominated by intra-grain scattering mechanisms. In contrast, when poly-Si is prepared on corning glass, the carrier concentration shows an inverted U-shape behavior with increasing deposition temperature. The Hall mobility is thermally activated, which is consistent with thermionic carrier emission over potential energy barriers. The change of the activation energy with experimental parameters is accompanied by a large change of the exponential prefactor by more than 4 orders of magnitude. This is indicative of a Meyer-Neldel behavior. Moreover, at low temperatures, the conductivity deviates from an activated behavior indicating hopping transport with a mean hopping distance of ≈140 Å and an energy difference of ≈82 meV between the participating states. To derive insight into the underlying transport mechanisms and to determine information on barrier energy heights and grain-boundary defect-densities, the experimental data were analyzed employing transport models for polycrystalline materials.

  7. Electric field assisted charge carrier photogeneration in poly(spirobifluorene-co-benzothiadiazole)

    SciTech Connect

    Devizis, A.; Serbenta, A.; Peckus, D.; Thiessen, A.; Alle, R.; Meerholz, K.; Hertel, D.; Gulbinas, V.

    2010-10-28

    The dynamics of charge carrier generation in poly(spirobifluorene-co-benzothiadiazole) was investigated by electric field-induced fluorescence quenching and differential absorption measurements. Three different time domains of carrier generation have been identified: an ultrafast phase, a subnanosecond phase, and an entire lifetime phase. The charge generation efficiencies during the first and second phases were found to be almost independent of temperature, being about 25% and 10%, respectively, at an applied electric field of 1.3x10{sup 6} V/cm, while the generation efficiency during the third phase increases from 2% at 80 K to 10% at room temperature. The results of transient spectroscopy measurements and quantum chemical calculations suggest an intramolecular charge transfer for about 1 ps from the alkoxy-substituted fluorene side group to the benzothiadiazole subunit of the main chain. The formation and evolution of the resulting charge transfer states determine the way of charge carrier generation.

  8. Earthquake lights and the stress-activation of positive hole charge carriers in rocks

    USGS Publications Warehouse

    St-Laurent, F.; Derr, J.S.; Freund, F.T.

    2006-01-01

    Earthquake-related luminous phenomena (also known as earthquake lights) may arise from (1) the stress-activation of positive hole (p-hole) charge carriers in igneous rocks and (2) the accumulation of high charge carrier concentrations at asperities in the crust where the stress rates increase very rapidly as an earthquake approaches. It is proposed that, when a critical charge carrier concentration is reached, the p-holes form a degenerated solid state plasma that can break out of the confined rock volume and propagate as a rapidly expanding charge cloud. Upon reaching the surface the charge cloud causes dielectric breakdown at the air-rock interface, i.e. corona discharges, accompanied by the emission of light and high frequency electromagnetic radiation. ?? 2006 Elsevier Ltd. All rights reserved.

  9. Low temperature carrier transport properties in isotopically controlled germanium

    SciTech Connect

    Itoh, Kohei

    1994-12-01

    Investigations of electronic and optical properties of semiconductors often require specimens with extremely homogeneous dopant distributions and precisely controlled net-carrier concentrations and compensation ratios. The previous difficulties in fabricating such samples are overcome as reported in this thesis by growing high-purity Ge single crystals of controlled 75Ge and 70Ge isotopic compositions, and doping these crystals by the neutron transmutation doping (NTD) technique. The resulting net-impurity concentrations and the compensation ratios are precisely determined by the thermal neutron fluence and the [74Ge]/[70Ge] ratios of the starting Ge materials, respectively. This method also guarantees unprecedented doping uniformity. Using such samples the authors have conducted four types of electron (hole) transport studies probing the nature of (1) free carrier scattering by neutral impurities, (2) free carrier scattering by ionized impurities, (3) low temperature hopping conduction, and (4) free carrier transport in samples close to the metal-insulator transition.

  10. Study on temperature-dependent carrier transport for bilayer graphene

    NASA Astrophysics Data System (ADS)

    Liu, Yali; Li, Weilong; Qi, Mei; Li, Xiaojun; Zhou, Yixuan; Ren, Zhaoyu

    2015-05-01

    In order to investigate the temperature-dependent carrier transport property of the bilayer graphene, graphene films were synthesized on Cu foils by a home-built chemical vapor deposition (CVD) with C2H2. Samples regularity, transmittance (T) and layer number were analyzed by transmission electron microscope (TEM) images, transmittance spectra and Raman spectra. Van Der Pauw method was used for resistivity measurements and Hall measurements at different temperatures. The results indicated that the sheet resistance (Rs), carrier density (n), and mobility (μ) were 1096.20 Ω/sq, 0.75×1012 cm-2, and 7579.66 cm2 V-1 s-1 at room temperature, respectively. When the temperature increased from 0 °C to 240 °C, carrier density (n) increased from 0.66×1012 cm-2 to 1.55×1012 cm-2, sheet resistance (Rs) decreased from 1215.55 Ω/sq to 560.77 Ω/sq, and mobility (μ) oscillated around a constant value 7773.99 cm2 V-1 s-1. The decrease of the sheet resistance (Rs) indicated that the conductive capability of the bilayer graphene film increased with the temperature. The significant cause of the increase of carrier density (n) was the thermal activation of carriers from defects and unconscious doping states. Because the main influence on the carrier mobility (μ) was the lattice defect scattering and a small amount of impurity scattering, the carrier mobility (μ) was temperature-independent for the bilayer graphene.

  11. High-frequency acoustic charge transport in GaAs nanowires.

    PubMed

    Büyükköse, S; Hernández-Mínguez, A; Vratzov, B; Somaschini, C; Geelhaar, L; Riechert, H; van der Wiel, W G; Santos, P V

    2014-04-04

    The oscillating piezoelectric fields accompanying surface acoustic waves are able to transport charge carriers in semiconductor heterostructures. Here, we demonstrate high-frequency (above 1 GHz) acoustic charge transport in GaAs-based nanowires deposited on a piezoelectric substrate. The short wavelength of the acoustic modulation, smaller than the length of the nanowire, allows the trapping of photo-generated electrons and holes at the spatially separated energy minima and maxima of conduction and valence bands, respectively, and their transport along the nanowire with a well defined acoustic velocity towards indium-doped recombination centers.

  12. Observation of complete space-charge-limited transport in metal-oxide-graphene heterostructure

    SciTech Connect

    Chen, Wei; Wang, Fei; Fang, Jingyue; Wang, Guang; Qin, Shiqiao; Zhang, Xue-Ao E-mail: xazhang@nudt.edu.cn; Wang, Chaocheng; Wang, Li E-mail: xazhang@nudt.edu.cn

    2015-01-12

    The metal-oxide-graphene heterostructures have abundant physical connotations. As one of the most important physical properties, the electric transport property of the gold-chromium oxide-graphene heterostructure has been studied. The experimental measurement shows that the conductive mechanism is dominated by the space-charge-limited transport, a kind of bulk transport of an insulator with charge traps. Combining the theoretical analysis, some key parameters such as the carrier mobility and trap energy also are obtained. The study of the characteristics of the metal-oxide-graphene heterostructures is helpful to investigate the graphene-based electronic and photoelectric devices.

  13. Molecular modeling and ligand docking for Solute Carrier (SLC) transporters

    PubMed Central

    Schlessinger, Avner; Khuri, Natalia; Giacomini, Kathleen M.; Sali, Andrej

    2014-01-01

    Solute Carrier (SLC) transporters are membrane proteins that transport solutes, such as ions, metabolites, peptides, and drugs, across biological membranes, using diverse energy coupling mechanisms. In human, there are 386 SLC transporters, many of which contribute to the absorption, distribution, metabolism, and excretion of drugs and/or can be targeted directly by therapeutics. Recent atomic structures of SLC transporters determined by X-ray crystallography and NMR spectroscopy have significantly expanded the applicability of structure-based prediction of SLC transporter ligands, by enabling both comparative modeling of additional SLC transporters and virtual screening of small molecules libraries against experimental structures as well as comparative models. In this review, we begin by describing computational tools, including sequence analysis, comparative modeling, and virtual screening, that are used to predict the structures and functions of membrane proteins such as SLC transporters. We then illustrate the applications of these tools to predicting ligand specificities of select SLC transporters, followed by experimental validation using uptake kinetic measurements and other assays. We conclude by discussing future directions in the discovery of the SLC transporter ligands. PMID:23578028

  14. [Is pneumatic sample transport system also a carrier for microorganisms?].

    PubMed

    Alpat, Saygin Nayman; Ozgüneş, Ilhan; Aybey, Aşkin Derya; Ertem, Osman Turgut; Akşit, Filiz

    2009-07-01

    The purpose of this study was to evaluate the possible infection and contamination risk of the pneumatic system used in our hospital and to establish essential infection control measures. The study was conducted in a quaternary health care center with 1.000 bed capacity. A total of 614 specimens were taken 2 times weekly from the pneumatic transport system and its carriers at 22 wards, 5 intensive care units, 3 laboratories, 2 blood taking units, and pharmacy. Samples were also obtained from the fingertips of 33 subjects using the system, before and after contact with the carriers. A questionnaire that consisted of 8 questions was applied to 224 subjects who worked in those units, evaluating the degree of compliance to the obligations for the cleaning of the pneumatic system and carriers and their approach in case of visible pollution at the system. Bacterial growth was observed in 15.2% (45/296) of samples in the 1st week and 7.6% (18/238) of the samples in the 2nd week, making a total of 11.8% (63/534) bacterial growth. No growth was detected from the areas where the carriers were placed. Of these 69.8% were coagulase negative staphylococci, 11.1% diphteroids, 7.9% Acinetobacter Iwoffii, 4.8% Staphylococcus aureus, 4.8% Bacillus spp. and 1.6% Enterococcus durans. Acinetobacter baumannii and Aspergillus were detected at two fingertip samples taken before the contact with carriers, while again A. baumannii and Enterobacter cloacae were detected at the samples following contact. Moreover, 31.3% of the subjects noted that they cleaned the carriers only if any visible contamination was present. In addition, 14.3% reported that they have encountered broken or spilled up material in the system for more than 5 times, 10.3% reported that they followed the instructions in case of presence of infected material inside the carriers, 23.7% reported that they always washed their hands after any contact with the carriers, 9.8% noted that they always used gloves during contact

  15. 75 FR 18255 - Passenger Facility Charge Database System for Air Carrier Reporting

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-04-09

    ... Federal Aviation Administration Passenger Facility Charge Database System for Air Carrier Reporting AGENCY... interested parties of the availability of the Passenger Facility Charge (PFC) database system to report PFC... public agency. The FAA has developed a national PFC database system in order to more easily track the...

  16. Exciton transport, charge extraction, and loss mechanisms in organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Scully, Shawn Ryan

    the primary losses that puts stringent requirements on the charge carrier mobilities in these cells is the recombination losses due to space charge build up at the heterojunction. Because electrons are confined to the acceptor and holes to the donor, net charge density always exists even when mobilities are matched, in contrast to bulk heterojunctions wherein matched mobilities lead to zero net charge. This net charge creates an electric field which opposes the built-in field and limits the current that can be carried away from this heterojunction. Using simulations we show that for relevant current densities charge carrier mobilities must be higher than 10-4 cm2/V.s to avoid significant losses due to space charge formation. In the last part of this work, we will focus on the second class of architectures in which exciton harvesting is efficient. We will present a systematic analysis of one of the leading polymer:fullerene bulk heterojunction cells to show that losses in this architecture are due to charge recombination. Using optical measurements and simulations, exciton harvesting measurements, and device characteristics we will show that the dominant loss is likely due to field-dependent geminate recombination of the electron and hole pair created immediately following exciton dissociation. No losses in this system are seen due to bimolecular recombination or space charge which provides information on charge-carrier mobility targets necessary for the future design of high efficiency organic photovoltaics.

  17. Effect of charged metal nanoparticles on carrier injection in graphene by an external electric field

    NASA Astrophysics Data System (ADS)

    Matsubara, Manaho; Okada, Susumu

    2017-02-01

    First-principles total-energy calculations clarify the effect of charged Al nanoparticles on carrier accumulation in graphene by an external electric field. Carrier injection in graphene with Al nanoparticles is sensitive to the relative position of the Al nanoparticles to the gate electrode. The nanoparticles sandwiched between graphene and an electrode prevent carrier injection in graphene, while the nanoparticles adsorbed on the opposite side do not affect the Dirac point shift, resulting in successive carrier injection in graphene. Because of the density of the state difference, the capacitance of graphene with Al nanoparticle also depends on the electrode position.

  18. Bimodal behaviour of charge carriers in graphene induced by electric double layer

    PubMed Central

    Tsai, Sing-Jyun; Yang, Ruey-Jen

    2016-01-01

    A theoretical investigation is performed into the electronic properties of graphene in the presence of liquid as a function of the contact area ratio. It is shown that the electric double layer (EDL) formed at the interface of the graphene and the liquid causes an overlap of the conduction bands and valance bands and increases the density of state (DOS) at the Fermi energy (EF). In other words, a greater number of charge carriers are induced for transport and the graphene changes from a semiconductor to a semimetal. In addition, it is shown that the dependence of the DOS at EF on the contact area ratio has a bimodal distribution which responses to the experimental observation, a pinnacle curve. The maximum number of induced carriers is expected to occur at contact area ratios of 40% and 60%. In general, the present results indicate that modulating the EDL provides an effective means of tuning the electronic properties of graphene in the presence of liquid. PMID:27464986

  19. Diffusion length of photo-generated charge carriers in layers and powders of CH3NH3PbI3 perovskite

    NASA Astrophysics Data System (ADS)

    Dittrich, Th.; Lang, F.; Shargaieva, O.; Rappich, J.; Nickel, N. H.; Unger, E.; Rech, B.

    2016-08-01

    The diffusion or transport lengths of photo-generated charge carriers in CH3NH3PbI3 layers (thickness up to 1 μm) and powders have been directly measured with high accuracy by modulated surface photovoltage after Goodman. The values of the diffusion lengths of photo-generated charge carriers ranged from 200 nm to tenths of μm. In thin CH3NH3PbI3 layers, the transport lengths corresponded to the layer thickness whereas in thicker layers and in crystallites of CH3NH3PbI3 powders the grain size limited the diffusion length. For grains, the diffusion length of photo-generated charge carriers depended on the measurement conditions.

  20. Charge and Spin Transport in Dilute Magnetic Semiconductors

    SciTech Connect

    Ullrich, Carsten A.

    2009-07-23

    This proposal to the DOE outlines a three-year plan of research in theoretical and computational condensed-matter physics, with the aim of developing a microscopic theory for charge and spin dynamics in disordered materials with magnetic impurities. Important representatives of this class of materials are the dilute magnetic semiconductors (DMS), which have attracted great attention as a promising basis for spintronics devices. There is an intense experimental effort underway to study the transport properties of ferromagnetic DMS such as (Ga,Mn)As, and a number of interesting features have emerged: negative magnetoresistance, anomalous Hall effect, non-Drude dynamical conductivity, and resistivity maxima at the Curie temperature. Available theories have been able to account for some of these features, but at present we are still far away from a systematic microscopic understanding of transport in DMS. We propose to address this challenge by developing a theory of charge and spin dynamics based on a combination of the memory-function formalism and time-dependent density functional theory. This approach will be capable of dealing with two important issues: (a) the strong degree of correlated disorder in DMS, close to the localization transition (which invalidates the usual relaxation-time approximation to the Boltzmann equation), (b) the essentially unknown role of dynamical many-body effects such as spin Coulomb drag. We will calculate static and dynamical conductivities in DMS as functions of magnetic order and carrier density, which will advance our understanding of recent transport and infrared absorption measurements. Furthermore, we will study collective plasmon excitations in DMS (3D, 2D and quantum wells), whose linewidths could constitute a new experimental probe of the correlation of disorder, many-body effects and charge and spin dynamics in these materials.

  1. 29 CFR 780.155 - Delivery “to carriers for transportation to market.”

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 29 Labor 3 2010-07-01 2010-07-01 false Delivery âto carriers for transportation to market.â 780... “to carriers for transportation to market.” The term “delivery * * * to carriers for transportation to market” includes taking agricultural or horticultural commodities, dairy products, livestock, bees...

  2. 29 CFR 780.155 - Delivery “to carriers for transportation to market.”

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 29 Labor 3 2011-07-01 2011-07-01 false Delivery âto carriers for transportation to market.â 780... “to carriers for transportation to market.” The term “delivery * * * to carriers for transportation to market” includes taking agricultural or horticultural commodities, dairy products, livestock, bees...

  3. Matrix engineering, state filling, and charge transport in PbSe quantum dot solids

    NASA Astrophysics Data System (ADS)

    Law, Matt

    Colloidal semiconductor quantum dots (QDs) are attractive building blocks for solar photovoltaics (PV). In this talk, I will highlight our recent progress in designing PbX (X = S, Se, Te) QD thin film absorbers for next-generation PV. Basic requirements for QD absorber layers include efficient light absorption, charge separation, charge transport, and long-term stability. I begin by discussing QD film fabrication, charge transport physics, insights from theory, and evidence that the carrier diffusion length is short and limited by electronic states in the QD band gap. Studies of carrier mobility as a function of basic film parameters such as inter-QD spacing, QD size, and QD size distribution have led to a better understanding of charge transport within highly disordered QD films. Efforts to improve carrier mobility by enhancing inter-dot electronic coupling, passivating surface states, and implementing surface doping will be highlighted. Engineering the inter-QD matrix to produce QD/inorganic or QD/organic nanocomposites is presented as a powerful way to optimize coupling, remove surface states, eliminate hysteretic charge trapping and ion motion, and achieve long-term environmental stability for high-performance, robust QD films that feature good carrier multiplication efficiency. New results on the use of atomic layer deposition infilling of QD films to yield all-inorganic QD transistors free of the bias-stress effect will be presented, and the likely role of ion transport in QD optoelectronics discussed. The use of infrared transmission spectroscopy to understand state filling and study charge transport in QD thin film transistors will be presented.

  4. Charge carrier mobility and electronic properties of Al(Op)3: impact of excimer formation

    PubMed Central

    Friederich, Pascal; Schäfer, Bernhard; Fattori, Valeria; Sun, Xiangnan; Strunk, Timo; Meded, Velimir; Hueso, Luis E; Wenzel, Wolfgang; Ruben, Mario

    2015-01-01

    Summary We have studied the electronic properties and the charge carrier mobility of the organic semiconductor tris(1-oxo-1H-phenalen-9-olate)aluminium(III) (Al(Op)3) both experimentally and theoretically. We experimentally estimated the HOMO and LUMO energy levels to be −5.93 and −3.26 eV, respectively, which were close to the corresponding calculated values. Al(Op)3 was successfully evaporated onto quartz substrates and was clearly identified in the absorption spectra of both the solution and the thin film. A structured steady state fluorescence emission was detected in solution, whereas a broad, red-shifted emission was observed in the thin film. This indicates the formation of excimers in the solid state, which is crucial for the transport properties. The incorporation of Al(Op)3 into organic thin film transistors (TFTs) was performed in order to measure the charge carrier mobility. The experimental setup detected no electron mobility, while a hole mobility between 0.6 × 10−6 and 2.1 × 10−6 cm2·V−1·s−1 was measured. Theoretical simulations, on the other hand, predicted an electron mobility of 9.5 × 10−6 cm2·V−1·s−1 and a hole mobility of 1.4 × 10−4 cm2·V−1·s−1. The theoretical simulation for the hole mobility predicted an approximately one order of magnitude higher hole mobility than was observed in the experiment, which is considered to be in good agreement. The result for the electron mobility was, on the other hand, unexpected, as both the calculated electron mobility and chemical common sense (based on the capability of extended aromatic structures to efficiently accept and delocalize additional electrons) suggest more robust electron charge transport properties. This discrepancy is explained by the excimer formation, whose inclusion in the multiscale simulation workflow is expected to bring the theoretical simulation and experiment into agreement. PMID:26171287

  5. Tuning The Optical, Charge Injection, and Charge Transport Properties of Organic Electronic Devices

    NASA Astrophysics Data System (ADS)

    Zalar, Peter

    Since the early 1900's, synthetic insulating polymers (plastics) have slowly taken over the role that traditional materials like wood or metal have had as basic components for construction, manufactured goods, and parts. Plastics allow for high throughput, low temperature processing, and control of bulk properties through molecular modifications. In the same way, pi-conjugated organic molecules are emerging as a possible substitute for inorganic materials due to their electronic properties. The semiconductive nature of pi-conjugated materials make them an attractive candidate to replace inorganic materials, primarily due to their promise for low cost and large-scale production of basic semiconducting devices such as light-emitting diodes, solar cells, and field-effect transistors. Before organic semiconductors can be realized as a commercial product, several hurdles must be cleared. The purpose of this dissertation is to address three distinct properties that dominate the functionality of devices harnessing these materials: (1) optical properties, (2) charge injection, and (3) charge transport. First, it is shown that the electron injection barrier in the emissive layer of polymer light-emitting diodes can be significantly reduced by processing of novel conjugated oligoelectrolytes or deoxyribonucleic acid atop the emissive layer. Next, the charge transport properties of several polymers could be modified by processing them from solvents containing small amounts of additives or by using regioregular and enantiopure chemical structures. It is then demonstrated that the optical and electronic properties of Lewis basic polymer structures can be readily modified by interactions with strongly electron-withdrawing Lewis acids. Through red-shifted absorption, photoluminescence, and electroluminescence, a single pi-conjugated backbone can be polychromatic. In addition, interaction with Lewis acids can remarkably p-dope the hole transport of the parent polymer, leading to a

  6. Interfacial Engineering and Charge Carrier Dynamics in Extremely Thin Absorber Solar Cells

    NASA Astrophysics Data System (ADS)

    Edley, Michael

    Photovoltaic energy is a clean and renewable source of electricity; however, it faces resistance to widespread use due to cost. Nanostructuring decouples constraints related to light absorption and charge separation, potentially reducing cost by allowing a wider variety of processing techniques and materials to be used. However, the large interfacial areas also cause an increased dark current which negatively affects cell efficiency. This work focuses on extremely thin absorber (ETA) solar cells that used a ZnO nanowire array as a scaffold for an extremely thin CdSe absorber layer. Photoexcited electrons generated in the CdSe absorber are transferred to the ZnO layer, while photogenerated holes are transferred to the liquid electrolyte. The transfer of photoexcited carriers to their transport layer competes with bulk recombination in the absorber layer. After charge separation, transport of charge carriers to their respective contacts must occur faster than interfacial recombination for efficient collection. Charge separation and collection depend sensitively on the dimensions of the materials as well as their interfaces. We demonstrated that an optimal absorber thickness can balance light absorption and charge separation. By treating the ZnO/CdSe interface with a CdS buffer layer, we were able to improve the Voc and fill factor, increasing the ETA cell's efficiency from 0.53% to 1.34%, which is higher than that achievable using planar films of the same material. We have gained additional insight into designing ETA cells through the use of dynamic measurements. Ultrafast transient absorption spectroscopy revealed that characteristic times for electron injection from CdSe to ZnO are less than 1 ps. Electron injection is rapid compared to the 2 ns bulk lifetime in CdSe. Optoelectronic measurements such as transient photocurrent/photovoltage and electrochemical impedance spectroscopy were applied to study the processes of charge transport and interfacial recombination

  7. Effects of Surface Conditions on Carrier Transport in III-V Compounds.

    DTIC Science & Technology

    1981-11-01

    large enough that charging effects would complicate the XPS measurements. Consequently, a doping density in the 1016 cm-3 range is very suitable for XPS...constant, T is the absolute temperature, Nc is the effective conduction-band density of states and ND is the donor density . For ND W1017 cm-3 , EcEF...CHART NAIIONAt BLRLJALI Of MANDARD, lq% A AFWAL-TR-81-1200 AD A109 7 (0 3 EFFECTS OF SURFACE CONDITIONS ON CARRIER TRANSPORT IN Ill-V COMPOUNDS R.W

  8. DNA Charge Transport over 34 nm

    PubMed Central

    Slinker, Jason D.; Muren, Natalie B.; Renfrew, Sara E.; Barton, Jacqueline K.

    2011-01-01

    Molecular wires show promise in nanoscale electronics but the synthesis of uniform, long conductive molecules is a significant challenge. DNA of precise length, by contrast, is easily synthesized, but its conductivity has not been explored over the distances required for nanoscale devices. Here we demonstrate DNA charge transport (CT) over 34 nm in 100-mer monolayers on gold. Multiplexed gold electrodes modified with 100-mer DNA yield sizable electrochemical signals from a distal, covalent Nile Blue redox probe. Significant signal attenuation upon incorporation of a single base pair mismatch demonstrates that CT is DNA-mediated. Efficient cleavage of these 100-mers by a restriction enzyme indicates that the DNA adopts a native conformation that is accessible to protein binding. Similar electron transfer rates are measured through 100-mer and 17-mer monolayers, consistent with rate-limiting electron tunneling through the saturated carbon linker. This DNA-mediated CT distance of 34 nm surpasses most reports of molecular wires. PMID:21336329

  9. A general relationship between disorder, aggregation and charge transport in conjugated polymers.

    PubMed

    Noriega, Rodrigo; Rivnay, Jonathan; Vandewal, Koen; Koch, Felix P V; Stingelin, Natalie; Smith, Paul; Toney, Michael F; Salleo, Alberto

    2013-11-01

    Conjugated polymer chains have many degrees of conformational freedom and interact weakly with each other, resulting in complex microstructures in the solid state. Understanding charge transport in such systems, which have amorphous and ordered phases exhibiting varying degrees of order, has proved difficult owing to the contribution of electronic processes at various length scales. The growing technological appeal of these semiconductors makes such fundamental knowledge extremely important for materials and process design. We propose a unified model of how charge carriers travel in conjugated polymer films. We show that in high-molecular-weight semiconducting polymers the limiting charge transport step is trapping caused by lattice disorder, and that short-range intermolecular aggregation is sufficient for efficient long-range charge transport. This generalization explains the seemingly contradicting high performance of recently reported, poorly ordered polymers and suggests molecular design strategies to further improve the performance of future generations of organic electronic materials.

  10. Analysis of electrolyte transport through charged nanopores

    NASA Astrophysics Data System (ADS)

    Peters, P. B.; van Roij, R.; Bazant, M. Z.; Biesheuvel, P. M.

    2016-05-01

    We revisit the classical problem of flow of electrolyte solutions through charged capillary nanopores or nanotubes as described by the capillary pore model (also called "space charge" theory). This theory assumes very long and thin pores and uses a one-dimensional flux-force formalism which relates fluxes (electrical current, salt flux, and fluid velocity) and driving forces (difference in electric potential, salt concentration, and pressure). We analyze the general case with overlapping electric double layers in the pore and a nonzero axial salt concentration gradient. The 3 ×3 matrix relating these quantities exhibits Onsager symmetry and we report a significant new simplification for the diagonal element relating axial salt flux to the gradient in chemical potential. We prove that Onsager symmetry is preserved under changes of variables, which we illustrate by transformation to a different flux-force matrix given by Gross and Osterle [J. Chem. Phys. 49, 228 (1968), 10.1063/1.1669814]. The capillary pore model is well suited to describe the nonlinear response of charged membranes or nanofluidic devices for electrokinetic energy conversion and water desalination, as long as the transverse ion profiles remain in local quasiequilibrium. As an example, we evaluate electrical power production from a salt concentration difference by reverse electrodialysis, using an efficiency versus power diagram. We show that since the capillary pore model allows for axial gradients in salt concentration, partial loops in current, salt flux, or fluid flow can develop in the pore. Predictions for macroscopic transport properties using a reduced model, where the potential and concentration are assumed to be invariant with radial coordinate ("uniform potential" or "fine capillary pore" model), are close to results of the full model.

  11. Carrier Transport and Viscosity of Discotic Liquid Crystalline Photoconductor Hexaoctyloxytriphenylene

    NASA Astrophysics Data System (ADS)

    Monobe, Hirosato; Okamoto, Shuichi; Enomoto, Hiroyuki; Shimizu, Yo

    2010-01-01

    In this study, the carrier transport and viscosity of 2,3,6,7,10,11-hexaoctyloxytriphenylene (C8OTP) have been studied by a time-of-flight method and a rotation viscometer. One-anion and two-cation transport was observed in the isotropic liquid phase, whereas the ambipolar electronic and one-anion transport was observed in the columnar mesophase. The activation energies for the ionic conductions in the isotropic liquid phase and columnar mesophase were 0.3 and 0.3 eV, respectively. The viscosity of C8OTP was investigated in the isotropic liquid phase and the activation energy was 0.4 eV. The Stokes radii of ionic carriers were experimentally estimated using Walden's rule. The Stokes radii for one anion and two cations were approximated to be 1, 2, and 8 Å, respectively. The Stokes radius of 8 Å for the larger cation represented the molecular size of C8OTP itself, assuming that C8OTP is a flat spheroid.

  12. Novel macrocyclic carriers for proton-coupled liquid membrane transport

    SciTech Connect

    Lamb, J.D.

    1991-06-10

    The objective of our research program is to elucidate the chemical principles which are responsible for the cation selectivity and permeability of liquid membranes containing macrocyclic carriers. Several new macrocyclic carriers were synthesized during the last three year period, including selenium-containing macrocycles, new crown-4 structures, and several new crown structures containing nitrogen based heterocycles as substituents in the principal macrocyclic ring. The cation binding properties of these macrocycles were investigated by potentiometric titration, calorimetric titration, solvent extraction, and NMR techniques. In addition, hydrophobic macrocycles were incorporated into dual hollow fiber membrane systems to investigate their membrane performance, especially in the proton-coupled transport mode. It was found that the dual hollow fiber system maintains the cation selectivity and permeability of supported liquid membranes, while enhancing membrane stability. The diffusion limited transport model was expanded to account for membrane solvent effects. Furthermore, Eu{sup 2+} transport was found to be similar to that of strontium and much higher than that of the lanthanides, in supported liquid membrane systems.

  13. Probing charge transfer and hot carrier dynamics in organic solar cells with terahertz spectroscopy

    NASA Astrophysics Data System (ADS)

    Cunningham, Paul D.; Lane, Paul A.; Melinger, Joseph S.; Esenturk, Okan; Heilweil, Edwin J.

    2016-04-01

    Time-resolved terahertz spectroscopy (TRTS) was used to explore charge generation, transfer, and the role of hot carriers in organic solar cell materials. Two model molecular photovoltaic systems were investigated: with zinc phthalocyanine (ZnPc) or alpha-sexathiophene (α-6T) as the electron donors and buckminsterfullerene (C60) as the electron acceptor. TRTS provides charge carrier conductivity dynamics comprised of changes in both population and mobility. By using time-resolved optical spectroscopy in conjunction with TRTS, these two contributions can be disentangled. The sub-picosecond photo-induced conductivity decay dynamics of C60 were revealed to be caused by auto-ionization: the intrinsic process by which charge is generated in molecular solids. In donor-acceptor blends, the long-lived photo-induced conductivity is used for weight fraction optimization of the constituents. In nanoscale multilayer films, the photo-induced conductivity identifies optimal layer thicknesses. In films of ZnPc/C60, electron transfer from ZnPc yields hot charges that localize and become less mobile as they thermalize. Excitation of high-lying Franck Condon states in C60 followed by hole-transfer to ZnPc similarly produces hot charge carriers that self-localize; charge transfer clearly precedes carrier cooling. This picture is contrasted to charge transfer in α-6T/C60, where hole transfer takes place from a thermalized state and produces equilibrium carriers that do not show characteristic signs of cooling and self-localization. These results illustrate the value of terahertz spectroscopic methods for probing charge transfer reactions.

  14. Xanthan hydrogel films: molecular conformation, charge density and protein carriers.

    PubMed

    Bueno, Vânia Blasques; Petri, Denise Freitas Siqueira

    2014-01-30

    In this article the molecular conformation of xanthan chains in hydrogel films was investigated by means of circular dichroism, showing substantial differences between xanthan hydrogel prepared in the absence (XNT) and in the presence of citric acid (XCA). The xanthan chains in XNT hydrogels films presented ordered conformation (helixes), while in XCA they were in the disordered conformation (coils), exposing a larger number of carboxylate groups than XNT. The large charge density in XCA hydrogels was evidenced by their behavior under variable ionic strength. Studies about the application of XNT and XCA for loading and delivering of bovine serum albumin (BSA) and lysozyme (LYZ) showed that both events are controlled by hydrogels and proteins net charge, which can be triggered by pH. The preservation of LYZ native conformation after hydrogel loading explained the substantial bactericidal activity of LYZ loaded hydrogels and enables their use as active wound dressings.

  15. Elastic tunneling charge transport mechanisms in silicon quantum dots / Si O 2 thin films and superlattices

    NASA Astrophysics Data System (ADS)

    Illera, S.; Prades, J. D.; Cirera, A.

    2015-05-01

    The role of different charge transport mechanisms in Si / Si O 2 structures has been studied. A theoretical model based on the Transfer Hamiltonian Formalism has been developed to explain experimental current trends in terms of three different elastic tunneling processes: (1) trap assisted tunneling; (2) transport through an intermediate quantum dot; and (3) direct tunneling between leads. In general, at low fields carrier transport is dominated by the quantum dots whereas, for moderate and high fields, transport through deep traps inherent to the SiO2 is the most relevant process. Besides, current trends in Si / Si O 2 superlattice structure have been properly reproduced.

  16. Unraveling Charge Carriers Generation, Diffusion, and Recombination in Formamidinium Lead Triiodide Perovskite Polycrystalline Thin Film.

    PubMed

    Piatkowski, Piotr; Cohen, Boiko; Ponseca, Carlito S; Salado, Manuel; Kazim, Samrana; Ahmad, Shahzada; Sundström, Villy; Douhal, Abderrazzak

    2016-01-07

    We report on studies of the formamidinium lead triiodide (FAPbI3) perovskite film using time-resolved terahertz (THz) spectroscopy (TRTS) and flash photolysis to explore charge carriers generation, migration, and recombination. The TRTS results show that upon femtosecond excitation above the absorption edge, the initial high photoconductivity (∼75 cm(2) V(-1) s(-1)) remains constant at least up to 8 ns, which corresponds to a diffusion length of 25 μm. Pumping below the absorption edge results in a mobility of 40 cm(2) V(-1) s(-1) suggesting lower mobility of charge carriers located at the bottom of the conduction band or shallow sub-bandgap states. Furthermore, analysis of the THz kinetics reveals rising components of <1 and 20 ps, reflecting dissociation of excitons having different binding energies. Flash photolysis experiments indicate that trapped charge carriers persist for milliseconds.

  17. Charge carrier mobility in an organic-inorganic hybrid nanocomposite

    NASA Astrophysics Data System (ADS)

    Choudhury, Kaushik Roy; Winiarz, Jeffrey G.; Samoc, Marek; Prasad, Paras N.

    2003-01-01

    Organic-inorganic hybrid materials are media for electronic and optoelectronic applications. We present a study of the electronic transport in such a model nanoparticle-sensitized hybrid organic-inorganic photorefractive host system, consisting of poly(N-vinylcarbazole) doped with quantum dots of cadmium sulfide, using standard time-of-flight techniques. The photocurrent transients exhibit features typical of dispersive transport in an amorphous semiconductor. The hole mobility depends strongly on the electric field and temperature indicating Poole-Frenkel-like activated hopping transport; a thickness dependence of the mobility is observed. The presence of nanoparticles does not lead to increased trapping of holes. Conversely, a surprising result is observed: the mobility actually increases with the increase of nanoparticle concentration even though it is well below the percolation limit.

  18. Interface Charge Transport in Organic Transistors as Investigated by Field-Induced Electron Spin Resonance

    NASA Astrophysics Data System (ADS)

    Hasegawa, Tatsuo

    2013-03-01

    Most of high-performance organic thin-film transistors (OTFTs) as recently developed is attainable with non-doped, single-component π-conjugated materials that exhibit high layer crystallinity both for small-molecules and polymers. The layer crystallinity is quite suitable to compose channel transport layers of the OTFTs, although the main origin to hinder the charge transport or the intrinsic carrier mobility is still controversial; intra- or intermolecular electron-phonon coupling, polarization effects by the gate-dielectrics, or thermal or extrinsic disorder effects. Here we discuss the interface charge transport in the OTFTs, as investigated by field-induced electron spin resonance (FESR) technique that probes 1/2 spin of carriers induced by gate voltage. It is shown that the FESR technique is extremely useful especially for OTFTs, because of the fairly small spin-orbit interactions in organic materials as well as of the high layer crystallinity and the anisotropy. The following important aspects of the interface charge transport are presented and discussed: (1) Carrier motion in OTFTs can be understood in terms of the multiple trap-and-release (MTR) transport. The analyses of the motional narrowing effects allow us to estimate the average trap residence time that reaches about 1 ns. (2) Carriers are frozen at the respective trap sites at low temperature. The low-temperature spectral analyses allow us to obtain the distribution of trapped carriers over their degree of localization. (3) We also developed a unique technique to investigate the intra- and inter-domain transport in polycrystalline OTFTs by using anisotropic FESR measurements. The method allows us to evaluate the potential barrier height at the domain boundaries within the films.

  19. Charge Transport Characterization of Novel Electronic Materials.

    NASA Astrophysics Data System (ADS)

    Marcy, Henry Orlando, 5th.

    1990-01-01

    The work presented includes analysis of electronic transport data and related measurements for the following types of materials: molecular metals and conducting polymers based upon phthalocyanine (Pc) building blocks, new composites of conducting polymers with inorganic polymeric and layered materials, and both bulk and thin film samples of the high -T_{rm c} ceramic superconductors. To successfully study such a wide spectrum of materials, the charge transport instrumentation has evolved into multiple computer-controlled experimental arrangements which process data for temperature dependent ac and dc conductivity, thermoelectric power, critical current density, and other measurements, over the temperature range of 1.5 K to 400 K. The phthalocyanine-based molecular metals and conducting polymers exhibit some of the highest reported conductivities for environmentally stable organic conductors, and possess a unique structure which is inherently resistant to large structural transformations upon donor/acceptor doping. These properties are demonstrated primarily by results for Ni(Pc)(ClO_4) _{rm y} and { (Si(Pc)O) X_{rm y}}_{rm n}. The rigidly-enforced structure of the latter system of materials allows for controllable tuning of the band-filling and hence, the charge transport properties of an organic conductor, from insulating to metal-like behavior, without any major structural alterations of the polymeric backbone. Other types of polymeric samples for which results are presented consist of composite fibers formed from the rigid rod polymers, Kevlar and PBT, "alloyed" with the (Pc)-based conducting polymers, and new microlaminates formed by intercalating various conducting polymers into the van der Waals gap of inorganic, layered host materials. Significant success has been achieved in the fabrication of superconducting films of Y-Ba-Cu-O, Bi-Sr(Pb)-Ca-Cu -O, and Tl-Ba-Ca-Cu-O by organometallic chemical vapor deposition. Results are also presented for films prepared

  20. Charge Carrier Processes in Photovoltaic Materials and Devices: Lead Sulfide Quantum Dots and Cadmium Telluride

    NASA Astrophysics Data System (ADS)

    Roland, Paul

    Charge separation, transport, and recombination represent fundamental processes for electrons and holes in semiconductor photovoltaic devices. Here, two distinct materials systems, based on lead sulfide quantum dots and on polycrystalline cadmium telluride, are investigated to advance the understanding of their fundamental nature for insights into the material science necessary to improve the technologies. Lead sulfide quantum dots QDs have been of growing interest in photovoltaics, having recently produced devices exceeding 10% conversion efficiency. Carrier transport via hopping through the quantum dot thin films is not only a function of inter-QD distance, but of the QD size and dielectric media of the surrounding materials. By conducting temperature dependent transmission, photoluminescence, and time resolved photoluminescence measurements, we gain insight into photoluminescence quenching and size-dependent carrier transport through QD ensembles. Turning to commercially relevant cadmium telluride (CdTe), we explore the high concentrations of self-compensating defects (donors and acceptors) in polycrystalline thin films via photoluminescence from recombination at defect sites. Low temperature (25 K) photoluminescence measurements of CdTe reveal numerous radiative transitions due to exciton, trap assisted, and donor-acceptor pair recombination events linked with various defect states. Here we explore the difference between films deposited via close space sublimation (CSS) and radio frequency magnetron sputtering, both as-grown and following a cadmium chloride treatment. The as-grown CSS films exhibited a strong donor-acceptor pair transition associated with deep defect states. Constructing photoluminescence spectra as a function of time from time-resolved photoluminescence data, we report on the temporal evolution of this donor-acceptor transition. Having gained insight into the cadmium telluride film quality from low temperature photoluminescence measurements

  1. Simulating charge transport in organic semiconductors and devices: a review

    NASA Astrophysics Data System (ADS)

    Groves, C.

    2017-02-01

    Charge transport simulation can be a valuable tool to better understand, optimise and design organic transistors (OTFTs), photovoltaics (OPVs), and light-emitting diodes (OLEDs). This review presents an overview of common charge transport and device models; namely drift-diffusion, master equation, mesoscale kinetic Monte Carlo and quantum chemical Monte Carlo, and a discussion of the relative merits of each. This is followed by a review of the application of these models as applied to charge transport in organic semiconductors and devices, highlighting in particular the insights made possible by modelling. The review concludes with an outlook for charge transport modelling in organic electronics.

  2. Near-field control and imaging of free charge carrier variations in GaN nanowires

    NASA Astrophysics Data System (ADS)

    Berweger, Samuel; Blanchard, Paul T.; Brubaker, Matt D.; Coakley, Kevin J.; Sanford, Norman A.; Wallis, Thomas M.; Bertness, Kris A.; Kabos, Pavel

    2016-02-01

    Despite their uniform crystallinity, the shape and faceting of semiconducting nanowires (NWs) can give rise to variations in structure and associated electronic properties. Here, we develop a hybrid scanning probe-based methodology to investigate local variations in electronic structure across individual n-doped GaN NWs integrated into a transistor device. We perform scanning microwave microscopy (SMM), which we combine with scanning gate microscopy to determine the free-carrier SMM signal contribution and image local charge carrier density variations. In particular, we find significant variations in free carriers across NWs, with a higher carrier density at the wire facets. By increasing the local carrier density through tip-gating, we find that the tip injects current into the NW with strongly localized current when positioned over the wire vertices. These results suggest that the strong variations in electronic properties observed within NWs have significant implications for device design and may lead to new paths to optimization.

  3. Influence of NO2 molecule adsorption on free charge carriers and spin centers in porous silicon

    NASA Astrophysics Data System (ADS)

    Konstantinova, E. A.; Osminkina, L. A.; Sharov, C. S.; Timoshenko, V. Yu.; Kashkarov, P. K.

    2005-06-01

    The effect of nitrogen dioxide (NO2) adsorption on free charge carriers and spin centers in porous silicon has been studied by FTIR and ESR spectroscopy. The silicon dangling bond (Pb1-center) density rises with increasing NO2 pressure (PNO2) while free charge carrier concentration depends on PNO2 nonmonotonically. The experimental results are explained by a microscopic model taking into account both the formation of Pb1+ -(NO2)- donor-acceptor pairs and NO2-induced oxidation of Si nanocrystal surfaces.

  4. Preface: Charge transport in nanoscale junctions

    NASA Astrophysics Data System (ADS)

    Albrecht, Tim; Kornyshev, Alexei; Bjørnholm, Thomas

    2008-09-01

    Understanding the fundamentals of nanoscale charge transfer is pivotal for designing future nano-electronic devices. Such devices could be based on individual or groups of molecular bridges, nanotubes, nanoparticles, biomolecules and other 'active' components, mimicking wire, diode and transistor functions. These have operated in various environments including vacuum, air and condensed matter, in two- or three-electrode configurations, at ultra-low and room temperatures. Interest in charge transport in ultra-small device components has a long history and can be dated back to Aviram and Ratner's letter in 1974 (Chem. Phys. Lett. 29 277-83). So why is there a necessity for a special issue on this subject? The area has reached some degree of maturity, and even subtle geometric effects in the nanojunction and noise features can now be resolved and rationalized based on existing theoretical concepts. One purpose of this special issue is thus to showcase various aspects of nanoscale and single-molecule charge transport from experimental and theoretical perspectives. The main principles have 'crystallized' in our minds, but there is still a long way to go before true single-molecule electronics can be implemented. Major obstacles include the stability of electronic nanojunctions, reliable operation at room temperature, speed of operation and, last but not least, integration into large networks. A gradual transition from traditional silicon-based electronics to devices involving a single (or a few) molecule(s) therefore appears to be more viable from technologic and economic perspectives than a 'quantum leap'. As research in this area progresses, new applications emerge, e.g. with a view to characterizing interfacial charge transfer at the single-molecule level in general. For example, electrochemical experiments with individual enzyme molecules demonstrate that catalytic processes can be studied with nanometre resolution, offering a route towards optimizing biosensors at

  5. Carrier transport properties of nanocrystalline Er{sub 3}N@C{sub 80}

    SciTech Connect

    Sun, Yong Maeda, Yuki; Sezaimaru, Hiroki; Sakaino, Masamichi; Kirimoto, Kenta

    2014-07-21

    Electrical transport properties of the nanocrystalline Er{sub 3}N@C{sub 80} with fcc crystal structure were characterized by measuring both temperature-dependent d.c. conductance and a.c. impedance. The results showed that the Er{sub 3}N@C{sub 80} sample has characteristics of n-type semiconductor and an electron affinity larger than work function of gold metal. The Er{sub 3}N@C{sub 80}/Au interface has an ohmic contact behavior and the contact resistance was very small as compared with bulk resistance of the Er{sub 3}N@C{sub 80} sample. The charge carriers in the sample were thermally excited from various trapped levels and both acoustic phonon and ionic scatterings become a dominant process in different temperature regions, respectively. At temperatures below 250 K, the activation energy of the trapped carrier was estimated to be 35.5 meV, and the ionic scattering was a dominant mechanism. On the other hand, at temperatures above 350 K, the activation energy was reduced to 15.9 meV, and the acoustic phonon scattering was a dominant mechanism. In addition, a polarization effect from the charge carrier was observed at low frequencies below 2.0 MHz, and the relative intrinsic permittivity of the Er{sub 3}N@C{sub 80} nanocrystalline lattice was estimated to be 4.6 at frequency of 5.0 MHz.

  6. Carrier transport performance of Cd0.9Zn0.1Te detector by direct current photoconductive technology

    NASA Astrophysics Data System (ADS)

    Ling, Yunpeng; Min, Jiahua; Liang, Xiaoyan; Zhang, Jijun; Yang, Liuqing; Zhang, Ying; Li, Ming; Liu, Zhaoxin; Wang, Linjun

    2017-01-01

    In this paper, based on the derivation of the Hecht model and Many model, we establish a new theoretical model and deduce its mathematical equation by considering an even-distributed charged center of certain concentration under constant illumination. This model helps us deeply understand the carrier transport performance of Cd0.9Zn0.1Te (CZT) under various illuminations and non-uniform distribution of the internal electric field in CZT. In our research, direct current photoconductive technology (DCPT) is applied to assess the electrical transport properties of carriers in CZT crystals, which is verified by room temperature Am-241 alpha-particle responses and charge collection efficiency test. The mobility-lifetime product ( μτ ) for carriers is extracted from fitting the Hecht model by DCPT for CZT radiated from the cathode and anode by a constant laser, respectively. Moreover, the carrier transport properties of CZT under various light intensities and during a wide range of temperatures are also taken and analyzed in detail, which enable us to develop the best performance of CZT. In addition, we figure out a method for estimating μeτe and μhτh on different positions of CZT wafer on the basis of the pixel detector that collects single polarity charge, and several corrective actions have improved the accuracy of the measurement.

  7. Charge transfer polarisation wave and carrier pairing in the high T(sub c) copper oxides

    NASA Technical Reports Server (NTRS)

    Chakraverty, B. K.

    1990-01-01

    The High T(sub c) oxides are highly polarizable materials and are charge transfer insulators. The charge transfer polarization wave formalism is developed in these oxides. The dispersion relationships due to long range dipole-dipole interaction of a charge transfer dipole lattice are obtained in 3-D and 2-D. These are high frequency bosons and their coupling with carriers is weak and antiadiabatic in nature. As a result, the mass renormalization of the carriers is negligible in complete contrast to conventional electron-phonon interaction, that give polarons and bipolarons. Both bound and superconducting pairing is discussed for a model Hamiltonian valid in the antiadiabatic regime, both in 3-D and 2-D. The stability of the charge transfer dipole lattice has interesting consequences that are discussed.

  8. Microstructure defects mediated charge transport in Nb-doped epitaxial BaTiO3 thin films

    NASA Astrophysics Data System (ADS)

    Zhou, Jian; Jing, Xiaosai; Alexe, Marin; Dai, Jiyan; Qin, Minghui; Wu, Sujuan; Zeng, Min; Gao, Jinwei; Lu, Xubing; Liu, J.-M.

    2016-05-01

    Nb-doped BaTiO3 (BNTO) films were deposited on MgO substrates at different substrate temperatures by pulsed laser deposition. The temperature dependence of their resistivity, carrier mobility and carrier concentration were systematically investigated. It reveals that the BNTO films deposited at lower temperature show higher resistivity and lower carrier mobility, and only show semiconductor characteristics at measurement temperatures ranging from 10 to 400 K. There is a metal-semiconductor transition at about 20 K for the films grown at relatively higher temperature. The intrinsic mechanism responsible for the different charge transport behavior was revealed by microstructure studies. Low crystal quality and high density of microstructure defects, observed for BNTO films grown at low temperatures, are, in particular, massively affecting the charge transport behavior of the BNTO films. The mediated charge transport of the microstructure defects is dominated by the thermal excitation process.

  9. Recombination in liquid filled ionisation chambers with multiple charge carrier species: Theoretical and numerical results

    NASA Astrophysics Data System (ADS)

    Aguiar, P.; González-Castaño, D. M.; Gómez, F.; Pardo-Montero, J.

    2014-10-01

    Liquid-filled ionisation chambers (LICs) are used in radiotherapy for dosimetry and quality assurance. Volume recombination can be quite important in LICs for moderate dose rates, causing non-linearities in the dose rate response of these detectors, and needs to be corrected for. This effect is usually described with Greening and Boag models for continuous and pulsed radiation respectively. Such models assume that the charge is carried by two different species, positive and negative ions, each of those species with a given mobility. However, LICs operating in non-ultrapure mode can contain different types of electronegative impurities with different mobilities, thus increasing the number of different charge carriers. If this is the case, Greening and Boag models can be no longer valid and need to be reformulated. In this work we present a theoretical and numerical study of volume recombination in parallel-plate LICs with multiple charge carrier species, extending Boag and Greening models. Results from a recent publication that reported three different mobilities in an isooctane-filled LIC have been used to study the effect of extra carrier species on recombination. We have found that in pulsed beams the inclusion of extra mobilities does not affect volume recombination much, a behaviour that was expected because Boag formula for charge collection efficiency does not depend on the mobilities of the charge carriers if the Debye relationship between mobilities and recombination constant holds. This is not the case in continuous radiation, where the presence of extra charge carrier species significantly affects the amount of volume recombination.

  10. DNA charge transport over 34 nm

    NASA Astrophysics Data System (ADS)

    Slinker, Jason D.; Muren, Natalie B.; Renfrew, Sara E.; Barton, Jacqueline K.

    2011-03-01

    Molecular wires show promise in nanoscale electronics, but the synthesis of uniform, long conductive molecules is a significant challenge. Deoxyribonucleic acid (DNA) of precise length, by contrast, is synthesized easily, but its conductivity over the distances required for nanoscale devices has not been explored. Here we demonstrate DNA charge transport (CT) over 34 nm in 100-mer monolayers on gold. Multiplexed gold electrodes modified with 100-mer DNA yield sizable electrochemical signals from a distal, covalent Nile Blue redox probe. Significant signal attenuation upon incorporation of a single base-pair mismatch demonstrates that CT is DNA-mediated. Efficient cleavage of these 100-mers by a restriction enzyme indicates that the DNA adopts a native conformation accessible to protein binding. Similar electron-transfer rates measured through 100-mer and 17-mer monolayers are consistent with rate-limiting electron tunnelling through the saturated carbon linker. This DNA-mediated CT distance of 34 nm surpasses that of most reports of molecular wires.

  11. 31 CFR 337.2 - Transportation charges and risks.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 31 Money and Finance: Treasury 2 2010-07-01 2010-07-01 false Transportation charges and risks. 337.2 Section 337.2 Money and Finance: Treasury Regulations Relating to Money and Finance (Continued... FEDERAL HOUSING ADMINISTRATION DEBENTURES Certificated Debentures § 337.2 Transportation charges and...

  12. Metal oxide charge transport material doped with organic molecules

    DOEpatents

    Forrest, Stephen R.; Lassiter, Brian E.

    2016-08-30

    Doping metal oxide charge transport material with an organic molecule lowers electrical resistance while maintaining transparency and thus is optimal for use as charge transport materials in various organic optoelectronic devices such as organic photovoltaic devices and organic light emitting devices.

  13. Brownian dynamics determine universality of charge transport in ionic liquids

    SciTech Connect

    Sangoro, Joshua R; Iacob, Ciprian; Mierzwa, Michal; Paluch, Marian; Kremer, Friedrich

    2012-01-01

    Broadband dielectric spectroscopy is employed to investigate charge transport in a variety of glass-forming ionic liquids over wide frequency, temperature and pressure ranges. Using a combination of Einstein, Einstein-Smoluchowski, and Langevin relations, the observed universal scaling of charge transport in ionic liquids is traced back to the dominant role of Brownian dynamics.

  14. Hybrid Perovskites for Photovoltaics: Charge-Carrier Recombination, Diffusion, and Radiative Efficiencies.

    PubMed

    Johnston, Michael B; Herz, Laura M

    2016-01-19

    Photovoltaic (PV) devices that harvest the energy provided by the sun have great potential as renewable energy sources, yet uptake has been hampered by the increased cost of solar electricity compared with fossil fuels. Hybrid metal halide perovskites have recently emerged as low-cost active materials in PV cells with power conversion efficiencies now exceeding 20%. Rapid progress has been achieved over only a few years through improvements in materials processing and device design. In addition, hybrid perovskites appear to be good light emitters under certain conditions, raising the prospect of applications in low-cost light-emitting diodes and lasers. Further optimization of such hybrid perovskite devices now needs to be supported by a better understanding of how light is converted into electrical currents and vice versa. This Account provides an overview of charge-carrier recombination and mobility mechanisms encountered in such materials. Optical-pump-terahertz-probe (OPTP) photoconductivity spectroscopy is an ideal tool here, because it allows the dynamics of mobile charge carriers inside the perovskite to be monitored following excitation with a short laser pulse whose photon energy falls into the range of the solar spectrum. We first review our insights gained from transient OPTP and photoluminescence spectroscopy on the mechanisms dominating charge-carrier recombination in these materials. We discuss that mono-molecular charge-recombination predominantly originates from trapping of charges, with trap depths being relatively shallow (tens of millielectronvolts) for hybrid lead iodide perovskites. Bimolecular recombination arises from direct band-to-band electron-hole recombination and is found to be in significant violation of the simple Langevin model. Auger recombination exhibits links with electronic band structure, in accordance with its requirement for energy and momentum conservation for all charges involved. We further discuss charge-carrier mobility

  15. Universal crossover of the charge carrier fluctuation mechanism in different polymer/carbon nanotubes composites

    SciTech Connect

    Barone, C. Mauro, C.; Pagano, S.; Landi, G.; Neitzert, H. C.

    2015-10-05

    Carbon nanotubes added to polymer and epoxy matrices are compounds of interest for applications in electronics and aerospace. The realization of high-performance devices based on these materials can profit from the investigation of their electric noise properties, as this gives a more detailed insight of the basic charge carriers transport mechanisms at work. The dc and electrical noise characteristics of different polymer/carbon nanotubes composites have been analyzed from 10 to 300 K. The results suggest that all these systems can be regarded as random resistive networks of tunnel junctions formed by adjacent carbon nanotubes. However, in the high-temperature regime, contributions deriving from other possible mechanisms cannot be separated using dc information alone. A transition from a fluctuation-induced tunneling process to a thermally activated regime is instead revealed by electric noise spectroscopy. In particular, a crossover is found from a two-level tunneling mechanism, operating at low temperatures, to resistance fluctuations of a percolative network, in the high-temperature region. The observed behavior of 1/f noise seems to be a general feature for highly conductive samples, independent on the type of polymer matrix and on the nanotube density.

  16. Universal crossover of the charge carrier fluctuation mechanism in different polymer/carbon nanotubes composites

    NASA Astrophysics Data System (ADS)

    Barone, C.; Landi, G.; Mauro, C.; Neitzert, H. C.; Pagano, S.

    2015-10-01

    Carbon nanotubes added to polymer and epoxy matrices are compounds of interest for applications in electronics and aerospace. The realization of high-performance devices based on these materials can profit from the investigation of their electric noise properties, as this gives a more detailed insight of the basic charge carriers transport mechanisms at work. The dc and electrical noise characteristics of different polymer/carbon nanotubes composites have been analyzed from 10 to 300 K. The results suggest that all these systems can be regarded as random resistive networks of tunnel junctions formed by adjacent carbon nanotubes. However, in the high-temperature regime, contributions deriving from other possible mechanisms cannot be separated using dc information alone. A transition from a fluctuation-induced tunneling process to a thermally activated regime is instead revealed by electric noise spectroscopy. In particular, a crossover is found from a two-level tunneling mechanism, operating at low temperatures, to resistance fluctuations of a percolative network, in the high-temperature region. The observed behavior of 1/f noise seems to be a general feature for highly conductive samples, independent on the type of polymer matrix and on the nanotube density.

  17. Interference of spin-, charge- and orbital degrees of freedom in low-carrier rare earth compounds, investigated by NMR

    NASA Astrophysics Data System (ADS)

    Wada, S.

    2006-05-01

    In rare earth compounds, the concentration of charge carriers is known to strongly influence the nature, and the charge carriers caused by valence fluctuations result in a complete suppression of the magnetic state, as typically observed for YbInCu4. The notable exception has been reported for the cubic (NaCl structure) TmX and YbX families with low carrier, that exhibits antiferro-magnetic (AFM) order at low temperatures. Among these families, TmTe and YbSb with degenerate low-lying multiplets have an additional transition of antiferro-quadrupolar (AFQ) orderings. To elucidate the interplay between the electronic transport and magnetic and/or orbital phenomena close to a semiconductor-to-metal transition, we have carried NMR measurements of 63Cu in YbInCu4, 125Te in TmTe, and 121Sb in YbSb down to 1.2 K and the implication of NMR findings is discussed in terms of the CEF splitting.

  18. Universal arrhenius temperature activated charge transport in diodes from disordered organic semiconductors.

    PubMed

    Craciun, N I; Wildeman, J; Blom, P W M

    2008-02-08

    Charge transport models developed for disordered organic semiconductors predict a non-Arrhenius temperature dependence ln(mu) proportional, variant1/T(2) for the mobility mu. We demonstrate that in space-charge limited diodes the hole mobility (micro(h)) of a large variety of organic semiconductors shows a universal Arrhenius temperature dependence micro(h)(T) = micro(0)exp(-Delta/kT) at low fields, due to the presence of extrinsic carriers from the Ohmic contact. The transport in a range of organic semiconductors, with a variation in room temperature mobility of more than 6 orders of magnitude, is characterized by a universal mobility micro(0) of 30-40 cm(2)/V s. As a result, we can predict the full temperature dependence of their charge transport properties with only the mobility at one temperature known.

  19. Charge transport and structural dynamics in carboxylic-acid-based deep eutectic mixtures.

    PubMed

    Griffin, Philip J; Cosby, Tyler; Holt, Adam P; Benson, Roberto S; Sangoro, Joshua R

    2014-08-07

    Charge transport and structural dynamics in the 1:2 mol ratio mixture of lidocaine and decanoic acid (LID-DA), a model deep eutectic mixture (DEM), have been characterized over a wide temperature range using broad-band dielectric spectroscopy and depolarized dynamic light scattering. Additionally, Fourier transform infrared spectroscopy measurements were performed to assess the degree of proton transfer between the neutral parent molecules. From our detailed analysis of the dielectric spectra, we have determined that this carboxylic-acid-based DEM is approximately 25% ionic at room temperature. Furthermore, we have found that the characteristic diffusion rate of mobile charge carriers is practically identical to the rate of structural relaxation at all measured temperatures, indicating that fast proton transport does not occur in LID-DA. Our results demonstrate that while LID-DA exhibits the thermal characteristics of a DEM, its charge transport properties resemble those of a protic ionic liquid.

  20. Hybrid organic—inorganic perovskites: low-cost semiconductors with intriguing charge-transport properties

    NASA Astrophysics Data System (ADS)

    Brenner, Thomas M.; Egger, David A.; Kronik, Leeor; Hodes, Gary; Cahen, David

    2016-01-01

    Solution-processed hybrid organic-inorganic perovskites (HOIPs) exhibit long electronic carrier diffusion lengths, high optical absorption coefficients and impressive photovoltaic device performance. Recent results allow us to compare and contrast HOIP charge-transport characteristics to those of III-V semiconductors — benchmarks of photovoltaic (and light-emitting and laser diode) performance. In this Review, we summarize what is known and unknown about charge transport in HOIPs, with particular emphasis on their advantages as photovoltaic materials. Experimental and theoretical findings are integrated into one narrative, in which we highlight the fundamental questions that need to be addressed regarding the charge-transport properties of these materials and suggest future research directions.

  1. 14 CFR 206.4 - Exemption of air carriers for military transportation.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 4 2010-01-01 2010-01-01 false Exemption of air carriers for military transportation. 206.4 Section 206.4 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION... AUTHORIZATIONS AND EXEMPTIONS § 206.4 Exemption of air carriers for military transportation. Air...

  2. 14 CFR 206.4 - Exemption of air carriers for military transportation.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 14 Aeronautics and Space 4 2012-01-01 2012-01-01 false Exemption of air carriers for military transportation. 206.4 Section 206.4 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION... AUTHORIZATIONS AND EXEMPTIONS § 206.4 Exemption of air carriers for military transportation. Air...

  3. 14 CFR 206.4 - Exemption of air carriers for military transportation.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 14 Aeronautics and Space 4 2013-01-01 2013-01-01 false Exemption of air carriers for military transportation. 206.4 Section 206.4 Aeronautics and Space OFFICE OF THE SECRETARY, DEPARTMENT OF TRANSPORTATION... AUTHORIZATIONS AND EXEMPTIONS § 206.4 Exemption of air carriers for military transportation. Air...

  4. 75 FR 7616 - Mitigation of Carrier Fines for Transporting Aliens Without Proper Documents; Modification of...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-02-22

    ... SECURITY U.S. Customs and Border Protection Mitigation of Carrier Fines for Transporting Aliens Without... Security. ACTION: General notice. SUMMARY: A carrier that transports to the United States an alien who does... fine for each alien transported lacking the required documentation. Pursuant to statute and...

  5. 49 CFR 385.13 - Unsatisfactory rated motor carriers; prohibition on transportation; ineligibility for Federal...

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... on transportation; ineligibility for Federal contracts. 385.13 Section 385.13 Transportation Other... rated motor carriers; prohibition on transportation; ineligibility for Federal contracts. (a) Generally, a motor carrier rated “unsatisfactory” is prohibited from operating a CMV. Information on...

  6. 49 CFR 385.13 - Unsatisfactory rated motor carriers; prohibition on transportation; ineligibility for Federal...

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... on transportation; ineligibility for Federal contracts. 385.13 Section 385.13 Transportation Other... rated motor carriers; prohibition on transportation; ineligibility for Federal contracts. (a) Generally, a motor carrier rated “unsatisfactory” is prohibited from operating a CMV. Information on...

  7. 49 CFR 385.13 - Unsatisfactory rated motor carriers; prohibition on transportation; ineligibility for Federal...

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... on transportation; ineligibility for Federal contracts. 385.13 Section 385.13 Transportation Other... rated motor carriers; prohibition on transportation; ineligibility for Federal contracts. (a) Generally, a motor carrier rated “unsatisfactory” is prohibited from operating a CMV. Information on...

  8. 49 CFR 385.13 - Unsatisfactory rated motor carriers; prohibition on transportation; ineligibility for Federal...

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... on transportation; ineligibility for Federal contracts. 385.13 Section 385.13 Transportation Other... rated motor carriers; prohibition on transportation; ineligibility for Federal contracts. (a) Generally, a motor carrier rated “unsatisfactory” is prohibited from operating a CMV. Information on...

  9. Mapping the spatial distribution of charge carriers in quantum-confined heterostructures

    PubMed Central

    Smith, Andrew M.; Lane, Lucas A.; Nie, Shuming

    2014-01-01

    Quantum-confined nanostructures are considered ‘artificial atoms’ because the wavefunctions of their charge carriers resemble those of atomic orbitals. For multiple-domain heterostructures, however, carrier wavefunctions are more complex and still not well understood. We have prepared a unique series of cation-exchanged HgxCd1−xTe quantum dots (QDs) and seven epitaxial core–shell QDs and measured their first and second exciton peak oscillator strengths as a function of size and chemical composition. A major finding is that carrier locations can be quantitatively mapped and visualized during shell growth or cation exchange simply using absorption transition strengths. These results reveal that a broad range of quantum heterostructures with different internal structures and band alignments exhibit distinct carrier localization patterns that can be used to further improve the performance of optoelectronic devices and enhance the brightness of QD probes for bioimaging. PMID:25080298

  10. Charge Carrier Trapping at Surface Defects of Perovskite Solar Cell Absorbers: A First-Principles Study.

    PubMed

    Uratani, Hiroki; Yamashita, Koichi

    2017-02-16

    The trapping of charge carriers at defects on surfaces or grain boundaries is detrimental for the performance of perovskite solar cells (PSCs). For example, it is the main limiting factor for carrier lifetime. Moreover, it causes hysteresis in the current-voltage curves, which is considered to be a serious issue for PSCs' operation. In this work, types of surface defects responsible for carrier trapping are clarified by a comprehensive first-principles investigation into surface defects of tetragonal CH3NH3PbI3 (MAPbI3). Considering defect formation energetics, it is proposed that a Pb-rich condition is preferred to an I-rich one; however, a moderate condition might possibly be the best choice. Our result paves the way for improving the performance of PSCs through a rational strategy of suppressing carrier trapping at surface defects.

  11. Strontium Insertion in Methylammonium Lead Iodide: Long Charge Carrier Lifetime and High Fill-Factor Solar Cells

    SciTech Connect

    Pérez-del-Rey, Daniel; Savenije, Tom J.; Nordlund, Dennis; Schulz, Philip; Berry, Joseph J.; Sessolo, Michele

    2016-09-22

    The addition of Sr2+ in CH3NH3PbI3 perovskite films enhances the charge carrier collection efficiency of solar cells leading to very high fill factors, up to 85%. The charge carrier lifetime of Sr2+-containing perovskites is in excess of 40 us, longer than those reported for perovskite single crystals.

  12. DNA Charge Transport within the Cell

    PubMed Central

    Grodick, Michael A.; Muren, Natalie B.; Barton, Jacqueline K.

    2015-01-01

    The unique characteristics of DNA charge transport (CT) have prompted an examination of roles for this chemistry within a biological context. Not only can DNA CT facilitate long range oxidative damage of DNA, but redox-active proteins can couple to the DNA base stack and participate in long range redox reactions using DNA CT. DNA transcription factors with redox-active moieties such as SoxR and p53 can use DNA CT as a form of redox sensing. DNA CT chemistry also provides a means to monitor the integrity of the DNA, given the sensitivity of DNA CT to perturbations in base stacking as arise with mismatches and lesions. Enzymes that utilize this chemistry include an interesting and ever-growing class of DNA-processing enzymes involved in DNA repair, replication, and transcription that have been found to contain 4Fe-4S clusters. DNA repair enzymes containing 4Fe-4S clusters, that include Endonuclease III (EndoIII), MutY, and DinG from bacteria, as well as XPD from archaea, have been shown to be redox-active when bound to DNA, share a DNA-bound redox potential, and can be reduced and oxidized at long range via DNA CT. Interactions between DNA and these proteins in solution, in addition to genetics experiments within E. coli, suggest that DNA-mediated CT can be used as a means of cooperative signaling among DNA repair proteins that contain 4Fe-4S clusters as a first step in finding DNA damage, even within cells. Based on these data, we can consider also how DNA-mediated CT may be used as a means of signaling to coordinate DNA processing across the genome. PMID:25606780

  13. Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors.

    PubMed

    Li, Song-Lin; Tsukagoshi, Kazuhito; Orgiu, Emanuele; Samorì, Paolo

    2016-01-07

    Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable semiconducting materials known. Their unique optical, electronic and mechanical properties hold great potential for harnessing them as key components in novel applications for electronics and optoelectronics. However, the charge transport behavior in 2D semiconductors is more susceptible to external surroundings (e.g. gaseous adsorbates from air and trapped charges in substrates) and their electronic performance is generally lower than corresponding bulk materials due to the fact that the surface and bulk coincide. In this article, we review recent progress on the charge transport properties and carrier mobility engineering of 2D transition metal chalcogenides, with a particular focus on the markedly high dependence of carrier mobility on thickness. We unveil the origin of this unique thickness dependence and elaborate the devised strategies to master it for carrier mobility optimization. Specifically, physical and chemical methods towards the optimization of the major factors influencing the extrinsic transport such as electrode/semiconductor contacts, interfacial Coulomb impurities and atomic defects are discussed. In particular, the use of ad hoc molecules makes it possible to engineer the interface with the dielectric and heal the vacancies in such materials. By casting fresh light on the theoretical and experimental studies, we provide a guide for improving the electronic performance of 2D semiconductors, with the ultimate goal of achieving technologically viable atomically thin (opto)electronics.

  14. Charge transport in tri-p-tolylamine doped trinaphthalylbenzene glass

    NASA Astrophysics Data System (ADS)

    Lin, Liang-Bih; O'Reilly, James M.; Magin, Edward H.; Weiss, David S.; Jenekhe, Samson A.

    2000-09-01

    The charge transport properties of tri-p-tolylamine (TTA) doped trinaphthalylbenzene have been measured as a function of electric field and temperature. The charge mobilities of the composite are comparable to but somewhat lower than that of TTA doped polystyrene, a nonpolar polymeric host, at similar weight fractions. We suggest that the difference is due to inhomogeneity between the host and the dopant. The results suggest that, similar to polymer hosts in molecularly doped polymers, the molecular host only functions as an inert diluter and does not directly participate in the charge transport manifold. The results also substantiate the importance of molecular packing to charge hopping in disordered organic materials. The charge mobility data are analyzed with a disorder model due to Bässler and coworkers and a recently modified expression due to Novikov and coworkers [Phys. Rev. Lett. 81, 4472 (1998)]. Both models provide adequate descriptions of charge transport in organic amorphous materials.

  15. A molecule to detect and perturb the confinement of charge carriers in quantum dots.

    PubMed

    Frederick, Matthew T; Amin, Victor A; Cass, Laura C; Weiss, Emily A

    2011-12-14

    This paper describes unprecedented bathochromic shifts (up to 970 meV) of the optical band gaps of CdS, CdSe, and PbS quantum dots (QDs) upon adsorption of an organic ligand, phenyldithiocarbamate (PTC), and the use of PTC to map the quantum confinement of specific charge carriers within the QDs as a function of their radius. For a given QD material and physical radius, R, the magnitude of the increase in apparent excitonic radius (ΔR) upon delocalization by PTC directly reflects the degree of quantum confinement of one or both charge carriers. The plots of ΔR vs R for CdSe and CdS show that exciton delocalization by PTC occurs specifically through the excitonic hole. Furthermore, the plot for CdSe, which spans a range of R over multiple confinement regimes for the hole, identifies the radius (R∼1.9 nm) at which the hole transitions between regimes of strong and intermediate confinement. This demonstration of ligand-induced delocalization of a specific charge carrier is a first step toward eliminating current-limiting resistive interfaces at organic-inorganic junctions within solid-state hybrid devices. Facilitating carrier-specific electronic coupling across heterogeneous interfaces is especially important for nanostructured devices, which comprise a high density of such interfaces.

  16. Beam transport and space charge compensation strategies (invited)

    SciTech Connect

    Meusel, O. Droba, M.; Noll, D.; Schulte, K.; Schneider, P. P.; Wiesner, C.

    2016-02-15

    The transport of intense ion beams is affected by the collective behavior of this kind of multi-particle and multi-species system. The space charge expressed by the generalized perveance dominates the dynamical process of thermalisation, which leads to emittance growth. To prevent changes of intrinsic beam properties and to reduce the intensity dependent focusing forces, space charge compensation seems to be an adequate solution. In the case of positively charged ion beams, electrons produced by residual gas ionization and secondary electrons provide the space charge compensation. The influence of the compensation particles on the beam transport and the local degree of space charge compensation is given by different beam properties as well as the ion beam optics. Especially for highly charged ion beams, space charge compensation in combination with poor vacuum conditions leads to recombination processes and therefore increased beam losses. Strategies for providing a compensation-electron reservoir at very low residual gas pressures will be discussed.

  17. Beam transport and space charge compensation strategies (invited).

    PubMed

    Meusel, O; Droba, M; Noll, D; Schulte, K; Schneider, P P; Wiesner, C

    2016-02-01

    The transport of intense ion beams is affected by the collective behavior of this kind of multi-particle and multi-species system. The space charge expressed by the generalized perveance dominates the dynamical process of thermalisation, which leads to emittance growth. To prevent changes of intrinsic beam properties and to reduce the intensity dependent focusing forces, space charge compensation seems to be an adequate solution. In the case of positively charged ion beams, electrons produced by residual gas ionization and secondary electrons provide the space charge compensation. The influence of the compensation particles on the beam transport and the local degree of space charge compensation is given by different beam properties as well as the ion beam optics. Especially for highly charged ion beams, space charge compensation in combination with poor vacuum conditions leads to recombination processes and therefore increased beam losses. Strategies for providing a compensation-electron reservoir at very low residual gas pressures will be discussed.

  18. Electrode configuration and signal subtraction technique for single polarity charge carrier sensing in ionization detectors

    DOEpatents

    Luke, P.

    1996-06-25

    An ionization detector electrode and signal subtraction apparatus and method provide at least one first conductive trace formed onto the first surface of an ionization detector. The first surface opposes a second surface of the ionization detector. At least one second conductive trace is also formed on the first surface of the ionization detector in a substantially interlaced and symmetrical pattern with the at least one first conductive trace. Both of the traces are held at a voltage potential of a first polarity type. By forming the traces in a substantially interlaced and symmetric pattern, signals generated by a charge carrier are substantially of equal strength with respect to both of the traces. The only significant difference in measured signal strength occurs when the charge carrier moves to within close proximity of the traces and is received at the collecting trace. The measured signals are then subtracted and compared to quantitatively measure the magnitude of the charge and to determine the position at which the charge carrier originated within the ionization detector. 9 figs.

  19. Electrode configuration and signal subtraction technique for single polarity charge carrier sensing in ionization detectors

    DOEpatents

    Luke, Paul

    1996-01-01

    An ionization detector electrode and signal subtraction apparatus and method provides at least one first conductive trace formed onto the first surface of an ionization detector. The first surface opposes a second surface of the ionization detector. At least one second conductive trace is also formed on the first surface of the ionization detector in a substantially interlaced and symmetrical pattern with the at least one first conductive trace. Both of the traces are held at a voltage potential of a first polarity type. By forming the traces in a substantially interlaced and symmetric pattern, signals generated by a charge carrier are substantially of equal strength with respect to both of the traces. The only significant difference in measured signal strength occurs when the charge carrier moves to within close proximity of the traces and is received at the collecting trace. The measured signals are then subtracted and compared to quantitatively measure the magnitude of the charge and to determine the position at which the charge carrier originated within the ionization detector.

  20. 41 CFR 302-7.103 - How are the charges calculated when a carrier charges a minimum weight, but the actual weight of...

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 41 Public Contracts and Property Management 4 2012-07-01 2012-07-01 false How are the charges calculated when a carrier charges a minimum weight, but the actual weight of HHG, PBP&E and temporary storage is less than the minimum weight charged? 302-7.103 Section 302-7.103 Public Contracts and...

  1. 49 CFR 385.13 - Unsatisfactory rated motor carriers; prohibition on transportation; ineligibility for Federal...

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... TRANSPORTATION FEDERAL MOTOR CARRIER SAFETY REGULATIONS SAFETY FITNESS PROCEDURES General § 385.13 Unsatisfactory... safety fitness, FMCSA may allow the motor carrier to operate for up to 60 additional days. (b) A Federal... motor carrier from operating a CMV in interstate commerce shall remain in effect until the...

  2. Charge Transport by Superexchange in Molecular Host-Guest Systems

    NASA Astrophysics Data System (ADS)

    Symalla, Franz; Friederich, Pascal; Massé, Andrea; Meded, Velimir; Coehoorn, Reinder; Bobbert, Peter; Wenzel, Wolfgang

    2016-12-01

    Charge transport in disordered organic semiconductors is generally described as a result of incoherent hopping between localized states. In this work, we focus on multicomponent emissive host-guest layers as used in organic light-emitting diodes (OLEDs), and show using multiscale ab initio based modeling that charge transport can be significantly enhanced by the coherent process of molecular superexchange. Superexchange increases the rate of emitter-to-emitter hopping, in particular if the emitter molecules act as relatively deep trap states, and allows for percolation path formation in charge transport at low guest concentrations.

  3. 49 CFR 1572.203 - Transportation of explosives from Canada to the United States via railroad carrier.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... railroad carrier may transport in commerce any explosive into the United States from Canada, via a train... carrier must submit the following information to Transport Canada: (i) The railroad carrier's... addresses. (3) Transport Canada will determine whether the railroad carrier and offeror are...

  4. 49 CFR 1572.203 - Transportation of explosives from Canada to the United States via railroad carrier.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... railroad carrier may transport in commerce any explosive into the United States from Canada, via a train... carrier must submit the following information to Transport Canada: (i) The railroad carrier's... addresses. (3) Transport Canada will determine whether the railroad carrier and offeror are...

  5. Impact of charge transport on current–voltage characteristics and power-conversion efficiency of organic solar cells

    PubMed Central

    Würfel, Uli; Neher, Dieter; Spies, Annika; Albrecht, Steve

    2015-01-01

    This work elucidates the impact of charge transport on the photovoltaic properties of organic solar cells. Here we show that the analysis of current–voltage curves of organic solar cells under illumination with the Shockley equation results in values for ideality factor, photocurrent and parallel resistance, which lack physical meaning. Drift-diffusion simulations for a wide range of charge-carrier mobilities and illumination intensities reveal significant carrier accumulation caused by poor transport properties, which is not included in the Shockley equation. As a consequence, the separation of the quasi Fermi levels in the organic photoactive layer (internal voltage) differs substantially from the external voltage for almost all conditions. We present a new analytical model, which considers carrier transport explicitly. The model shows excellent agreement with full drift-diffusion simulations over a wide range of mobilities and illumination intensities, making it suitable for realistic efficiency predictions for organic solar cells. PMID:25907581

  6. Impact of charge transport on current-voltage characteristics and power-conversion efficiency of organic solar cells.

    PubMed

    Würfel, Uli; Neher, Dieter; Spies, Annika; Albrecht, Steve

    2015-04-24

    This work elucidates the impact of charge transport on the photovoltaic properties of organic solar cells. Here we show that the analysis of current-voltage curves of organic solar cells under illumination with the Shockley equation results in values for ideality factor, photocurrent and parallel resistance, which lack physical meaning. Drift-diffusion simulations for a wide range of charge-carrier mobilities and illumination intensities reveal significant carrier accumulation caused by poor transport properties, which is not included in the Shockley equation. As a consequence, the separation of the quasi Fermi levels in the organic photoactive layer (internal voltage) differs substantially from the external voltage for almost all conditions. We present a new analytical model, which considers carrier transport explicitly. The model shows excellent agreement with full drift-diffusion simulations over a wide range of mobilities and illumination intensities, making it suitable for realistic efficiency predictions for organic solar cells.

  7. A theoretical study of charge transport properties of trifluoromethyl (-CF3) substituted naphthalene (TFMNA) molecule

    NASA Astrophysics Data System (ADS)

    Sahoo, S. R.; Parida, S. K.; Sahu, S.

    2016-09-01

    We present a density functional (DFT) study of the charge transport properties of CF3-naphthalene. Nature of charge transport is investigated using parameters such as reorganization energy (X), transfer integral (t), ionization potential (IP), electron affinity (EA), and carrier mobility (μ) computed through electronic structure calculations. We observe a decrease in X and IP from 2,6-DTFMNA to 1,5-DTFMNA, whereas, the EA is found to be enhanced, as a result p-type characteristics, with mild n-type signature, in the organic semiconductor gets increased. In addition, the HOMO-LUMO gap also gets reduced inferring more charge injection through the potential barrier. The maximum hole and electron mobility values for the substituted compound are obtained to be 2.17 cm2/ Vsec & 0.20 cm2/ Vsec, respectively.

  8. Base Sequence Effects on Charge Carrier Generation in Dna:. a Theoretical Study

    NASA Astrophysics Data System (ADS)

    Starikov, E. B.; Lewis, J. P.; Sankey, O. F.

    We have thoroughly analyzed the electronic structure of stacked DNA Watson-Crick (WC) base pair dimers using ab initio Hartree-Fock and semiempirical Hartree-Fock-configuration-interaction quantum chemistry. We consider all the possible base compositions and sequences at the nucleoside level in vacuo. The results show that in such systems charge carrier generation could in principle be possible via charge transfer excitons, which turn out to dominate the first excited electronic states of the WC base pairs and their stacked dimers, and this process is largely sequence- and conformation-dependent. Possible consequences of this result for polymeric DNA duplexes are discussed.

  9. Molecular ion battery: a rechargeable system without using any elemental ions as a charge carrier.

    PubMed

    Yao, Masaru; Sano, Hikaru; Ando, Hisanori; Kiyobayashi, Tetsu

    2015-06-04

    Is it possible to exceed the lithium redox potential in electrochemical systems? It seems impossible to exceed the lithium potential because the redox potential of the elemental lithium is the lowest among all the elements, which contributes to the high voltage characteristics of the widely used lithium ion battery. However, it should be possible when we use a molecule-based ion which is not reduced even at the lithium potential in principle. Here we propose a new model system using a molecular electrolyte salt with polymer-based active materials in order to verify whether a molecular ion species serves as a charge carrier. Although the potential of the negative-electrode is not yet lower than that of lithium at present, this study reveals that a molecular ion can work as a charge carrier in a battery and the system is certainly a molecular ion-based "rocking chair" type battery.

  10. Charge carrier mobility in organic molecular materials probed by electromagnetic waves.

    PubMed

    Seki, Shu; Saeki, Akinori; Sakurai, Tsuneaki; Sakamaki, Daisuke

    2014-06-21

    Charge carrier mobility is an essential parameter providing control over the performance of semiconductor devices fabricated using a variety of organic molecular materials. Recent design strategies toward molecular materials have been directed at the substitution of amorphous silicon-based semiconductors; accordingly, numerous measurement techniques have been designed and developed to probe the electronic conducting nature of organic materials bearing extremely wide structural variations in comparison with inorganic and/or metal-oxide semiconductor materials. The present perspective highlights the evaluation methodologies of charge carrier mobility in organic materials, as well as the merits and demerits of techniques examining the feasibility of organic molecules, crystals, and supramolecular assemblies in semiconductor applications. Beyond the simple substitution of amorphous silicon, we have attempted to address in this perspective the systematic use of measurement techniques for future development of organic molecular semiconductors.

  11. The Effective Mass of a Charged Carrier in a Nonpolar Liquid:. Applications to Superfluid Helium

    NASA Astrophysics Data System (ADS)

    Varlamov, Andrei; Chikina, Ioulia; Shikin, Valeriy

    The problem of a correct definition of the charged carrier effective mass in superfluid helium is revised. It is shown that the effective mass of such a quasi-particle can be introduced without Atkins's idea about the solidification of liquid He4 in the close vicinity of an ion (the so-called “snowball” model). Moreover, in addition to generalization of the Atkins's model, the charged carrier effective mass formation is considered within the framework of the two-fluid scenario. The physical reasons of the normal fluid contribution divergency and the way of corresponding regularization procedure are discussed. Agreement between the theory and the available experimental data is found in a wide range of temperatures.

  12. Effective mass of a charged carrier in a nonpolar liquid: Snowball effect in superfluid helium

    NASA Astrophysics Data System (ADS)

    Chikina, I.; Shikin, V.; Varlamov, A. A.

    2007-05-01

    The problem of a correct definition of the charged carrier effective mass in superfluid helium is revised. It is shown that the effective mass of such a quasiparticle can be introduced without Atkins’s idea about the solidification of liquid He4 in the close vicinity of an ion (the so-called “snowball” model). Moreover, in addition to the generalization of Atkins’s model, the charged carrier effective mass formation is considered within the framework of the two-fluid scenario. The physical reasons of the normal-fluid contribution divergency and the way of the corresponding regularization procedure are discussed. Agreement between the theory and the available experimental data is found in a wide range of temperatures.

  13. The Effective Mass of a Charged Carrier in a Nonpolar Liquid:. Applications to Superfluid Helium

    NASA Astrophysics Data System (ADS)

    Varlamov, Andrei; Chikina, Ioulia; Shikin, Valeriy

    2009-12-01

    The problem of a correct definition of the charged carrier effective mass in superfluid helium is revised. It is shown that the effective mass of such a quasi-particle can be introduced without Atkins's idea about the solidification of liquid He4 in the close vicinity of an ion (the so-called "snowball" model). Moreover, in addition to generalization of the Atkins's model, the charged carrier effective mass formation is considered within the framework of the two-fluid scenario. The physical reasons of the normal fluid contribution divergency and the way of corresponding regularization procedure are discussed. Agreement between the theory and the available experimental data is found in a wide range of temperatures.

  14. Molecular ion battery: a rechargeable system without using any elemental ions as a charge carrier

    PubMed Central

    Yao, Masaru; Sano, Hikaru; Ando, Hisanori; Kiyobayashi, Tetsu

    2015-01-01

    Is it possible to exceed the lithium redox potential in electrochemical systems? It seems impossible to exceed the lithium potential because the redox potential of the elemental lithium is the lowest among all the elements, which contributes to the high voltage characteristics of the widely used lithium ion battery. However, it should be possible when we use a molecule-based ion which is not reduced even at the lithium potential in principle. Here we propose a new model system using a molecular electrolyte salt with polymer-based active materials in order to verify whether a molecular ion species serves as a charge carrier. Although the potential of the negative-electrode is not yet lower than that of lithium at present, this study reveals that a molecular ion can work as a charge carrier in a battery and the system is certainly a molecular ion-based “rocking chair” type battery. PMID:26043147

  15. Effective mass of a charged carrier in a nonpolar liquid: Snowball effect in superfluid helium

    SciTech Connect

    Chikina, I.; Varlamov, A. A.

    2007-05-01

    The problem of a correct definition of the charged carrier effective mass in superfluid helium is revised. It is shown that the effective mass of such a quasiparticle can be introduced without Atkins's idea about the solidification of liquid He{sup 4} in the close vicinity of an ion (the so-called ''snowball'' model). Moreover, in addition to the generalization of Atkins's model, the charged carrier effective mass formation is considered within the framework of the two-fluid scenario. The physical reasons of the normal-fluid contribution divergency and the way of the corresponding regularization procedure are discussed. Agreement between the theory and the available experimental data is found in a wide range of temperatures.

  16. Phenol photodegradation on platinized-TiO2 photocatalysts related to charge-carrier dynamics.

    PubMed

    Emilio, Carina A; Litter, Marta I; Kunst, Marinus; Bouchard, Michel; Colbeau-Justin, Christophe

    2006-04-11

    Three commercial TiO2 compounds (Degussa P25, Sachtleben UV100, and Millenium PC50) and their platinized forms have been studied by the time-resolved microwave conductivity (TRMC) method to follow their charge-carrier dynamics and to relate it to the photocatalytic activity for phenol degradation in TiO2 aqueous suspensions. The degradation reaction has been studied in detail, following the time evolution of the concentration of phenol and its intermediates by liquid chromatography. The results show that platinization has a distinct influence on the commercial compounds, decreasing globally the activity of P25 and increasing the activity of PC50 and UV100. An influence of charge-carrier lifetimes on the photoactivity of pure and platinized TiO2 samples has been evidenced.

  17. Charge transport and device physics of layered-crystalline organic semiconductors (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Hasegawa, Tatsuo

    2015-10-01

    Here we present and discuss our recent investigations into the understanding of microscopic charge transport, novel film processing technologies, and a development of layered-crystalline organic semiconductors for high performance OTFTs. We first discuss the microscopic charge transport in the OTFTs, as investigated by field-induced electron spin resonance spectroscopy. The technique can detect signals due to tiny amount of field-induced carriers, accumulated at the semiconductor-insulator interfaces. Following aspects are presented and discussed; 1) Carrier motion within the crystalline domains can be understood in terms of the trap-and-release transport, 2) charge trap states are spatially extended over several sites depending on the trap levels, and 3) the intra- and inter-domain transport can be discriminated by anisotropic electron spin resonance measurements. Next we discuss novel print production technologies for organic semiconductors showing high layered crystallinity. The concept of "printed electronics" is now regarded as a realistic paradigm to manufacture light-weight, thin, and impact-resistant electronics devices, although production of highly crystalline semiconductor films may be incompatible with conventional printing process. We here present printing techniques for manufacturing high performance OTFTs; 1) double-shot inkjet printing for small-molecule-based semiconductors, and 2) push-coating for semiconducting polymers. We demonstrate that both processes are useful to manufacture high quality semiconductor layers with the high layered crystallinity.

  18. 9 CFR 91.18 - Cleaning and disinfection of transport carriers for export.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 9 Animals and Animal Products 1 2010-01-01 2010-01-01 false Cleaning and disinfection of transport carriers for export. 91.18 Section 91.18 Animals and Animal Products ANIMAL AND PLANT HEALTH INSPECTION....18 Cleaning and disinfection of transport carriers for export. All fittings, utensils and...

  19. Conductivity Contrast and Tunneling Charge Transport in the Vortexlike Ferroelectric Domain Patterns of Multiferroic Hexagonal YMnO3

    NASA Astrophysics Data System (ADS)

    Ruff, E.; Krohns, S.; Lilienblum, M.; Meier, D.; Fiebig, M.; Lunkenheimer, P.; Loidl, A.

    2017-01-01

    We deduce the intrinsic conductivity properties of the ferroelectric domain walls around the topologically protected domain vortex cores in multiferroic YMnO3 . This is achieved by performing a careful equivalent-circuit analysis of dielectric spectra measured in single-crystalline samples with different vortex densities. The conductivity contrast between the bulk domains and the less conducting domain boundaries is revealed to reach up to a factor of 500 at room temperature, depending on the sample preparation. Tunneling of localized defect charge carriers is the dominant charge-transport process in the domain walls that are depleted of mobile charge carriers. This work demonstrates that, via equivalent-circuit analysis, dielectric spectroscopy can provide valuable information on the intrinsic charge-transport properties of ferroelectric domain walls, which is of high relevance for the design of new domain-wall-based microelectronic devices.

  20. Charge Transport in Nonaqueous Liquid Electrolytes: A Paradigm Shift

    DTIC Science & Technology

    2015-05-18

    SECURITY CLASSIFICATION OF: We studied the temperature-dependence of mass and charge transport (ionic conductivity , self-diffusion, fluidity, and...Office P.O. Box 12211 Research Triangle Park, NC 27709-2211 temperature dependence, conductivity , self-diffusion, fluidity, organic liquid...Shift Report Title We studied the temperature-dependence of mass and charge transport (ionic conductivity , self-diffusion, fluidity, and dielectric

  1. Spectroscopic characterization of charge carrier anisotropic motion in twisted few-layer graphene

    PubMed Central

    Kandyba, Viktor; Yablonskikh, Mikhail; Barinov, Alexei

    2015-01-01

    Graphene, a layer of carbon atoms in a honeycomb lattice, captures enormous interest as probably the most promising component of future electronics thanks to its mechanical robustness, flexibility, and unique charge carrier quasiparticles propagating like massless high energy Dirac fermions. If several graphene layers form a stack, the interaction between them is, on the one hand, weak, allowing realization of various registries between the layers and, on the other hand, strong enough for a wide range tuning of the electronic properties. Here we grow few layer graphene with various number of layers and twist configurations and address the electronic properties of individual atomic layers in single microscopic domains using angle-resolved photoelectron spectromicroscopy. The dependence of the interlayer coupling on the twist angle is analyzed and, in the domains with tri-layers and more, if different rotations are present, the electrons in weaker coupled adjacent layers are shown to have different properties manifested by coexisting van Hove singularities, moiré superlattices with corresponding superlattice Dirac points, and charge carrier group velocity renormalizations. Moreover, pronounced anisotropy in the charge carrier motion, opening a possibility to transform strongly coupled graphene bilayers into quasi one-dimensional conductors, is observed. PMID:26548567

  2. Role of Adsorbed Water on Charge Carrier Dynamics in Photoexcited TiO2

    PubMed Central

    2017-01-01

    Overall photocatalytic water splitting is one of the most sought after processes for sustainable solar-to-chemical energy conversion. The efficiency of this process strongly depends on charge carrier recombination and interaction with surface adsorbates at different time scales. Here, we investigated how hydration of TiO2 P25 affects dynamics of photogenerated electrons at the millisecond to minute time scale characteristic for chemical reactions. We used rapid scan diffuse-reflectance infrared Fourier transform spectroscopy (DRIFTS). The decay of photogenerated electron absorption was substantially slower in the presence of associated water. For hydrated samples, the charge carrier recombination rates followed an Arrhenius-type behavior in the temperature range of 273–423 K; these became temperature-independent when the material was dehydrated at temperatures above 423 K or cooled below 273 K. A DFT+U analysis revealed that hydrogen bonding with adsorbed water stabilizes surface-trapped holes at anatase TiO2(101) facet and lowers the barriers for hole migration. Hence, hole mobility should be higher in the hydrated material than in the dehydrated system. This demonstrates that adsorbed associated water can efficiently stabilize photogenerated charge carriers in nanocrystalline TiO2 and suppress their recombination at the time scale up to minutes.

  3. An acoustic charge transport imager for high definition television applications

    NASA Technical Reports Server (NTRS)

    Hunt, William D.; Brennan, Kevin F.; Summers, Chris J.

    1992-01-01

    In this report we present the progress during the second six month period of the project. This includes both experimental and theoretical work on the acoustic charge transport (ACT) portion of the chip, the theoretical program modelling of both the avalanche photodiode (APD) and the charge transfer and overflow transistor and the materials growth and fabrication part of the program.

  4. Spatial and temporal imaging of long-range charge transport in perovskite thin films by ultrafast microscopy

    PubMed Central

    Guo, Zhi; Manser, Joseph S.; Wan, Yan; Kamat, Prashant V.; Huang, Libai

    2015-01-01

    Charge carrier diffusion coefficient and length are important physical parameters for semiconducting materials. Long-range carrier diffusion in perovskite thin films has led to remarkable solar cell efficiencies; however, spatial and temporal mechanisms of charge transport remain unclear. Here we present a direct measurement of carrier transport in space and in time by mapping carrier density with simultaneous ultrafast time resolution and ∼50-nm spatial precision in perovskite thin films using transient absorption microscopy. These results directly visualize long-range carrier transport of ∼220 nm in 2 ns for solution-processed polycrystalline CH3NH3PbI3 thin films. Variations of the carrier diffusion coefficient at the μm length scale have been observed with values ranging between 0.05 and 0.08 cm2 s−1. The spatially and temporally resolved measurements reported here underscore the importance of the local morphology and establish an important first step towards discerning the underlying transport properties of perovskite materials. PMID:26101051

  5. The photovoltaic effect and charge carrier mobility in layered compositions of bithiophene or related rotaxane copolymer with C70 fullerene derivative

    NASA Astrophysics Data System (ADS)

    Kostromin, S. V.; Malov, V. V.; Tameev, A. R.; Bronnikov, S. V.; Farcas, A.

    2017-02-01

    Organic photovoltaic cells with a bulk heterojunction have been manufactured in which the photoactive layer consists of a mixture of bithiophene copolymer or related rotaxane with a fullerene derivative (PC70BM). The mobility of charge carriers in photoactive layers has been determined, the current-voltage characteristics of photovoltaic cells have been measured, and the energy level diagram of cell components has been constructed. It is established that the polyrotaxane component (macrocycle) insulates a part of thiophene fragments of the macromolecule, thus hindering the transport of carriers and leading to large energy losses for exciton dissociation, which results in a decreasing photovoltaic effect.

  6. DNA Charge Transport for Sensing and Signaling

    PubMed Central

    Sontz, Pamela A.; Muren, Natalie B.; Barton, Jacqueline K.

    2012-01-01

    Conspectus The DNA duplex is an exquisite macromolecular array that stores genetic information to encode proteins and regulate pathways, but its unique structure imparts chemical function that allows it also to mediate charge transport (CT). We have utilized diverse platforms to probe DNA CT, using spectroscopic, electrochemical, and even genetic methods. These studies have established powerful features of DNA CT chemistry. DNA CT can occur over long molecular distances as long as the bases are well stacked; perturbations in base stacking as arise with single base mismatches, DNA lesions, and the binding of some proteins that kink the DNA, all serve to inhibit DNA CT. Significantly, single molecule studies of DNA CT show that ground state CT can occur over 34 nm as long as the duplex is well stacked; one single base mismatch inhibits CT. The DNA duplex is an effective sensor for the integrity of the base pair stack. Moreover the efficiency of DNA CT is what one would expect for a stack of graphite sheets, equivalent to the stack of DNA base pairs, and independent of the sugar-phosphate backbone. Since DNA CT offers a means to carry out redox chemistry from a distance, we have considered how this chemistry might be used for long range signaling in a biological context. We have taken advantage of our chemical probes and platforms to characterize DNA CT also in the context of the cell. CT can occur over long distances, perhaps funneling damage to particular sites and insulating others from oxidative stress. Significantly, transcription factors that activate the genome to respond to oxidative stress can also be activated from a distance through DNA CT. Numerous proteins work to maintain the integrity of the genome and increasingly they have been found to contain [4Fe-4S] clusters that do not appear to carry out either structural or enzymatic roles. Using electrochemical methods, we find that DNA binding shifts the redox potentials of the clusters, activating them

  7. Long-range hot-carrier transport in hybrid perovskites visualized by ultrafast microscopy.

    PubMed

    Guo, Zhi; Wan, Yan; Yang, Mengjin; Snaider, Jordan; Zhu, Kai; Huang, Libai

    2017-04-07

    The Shockley-Queisser limit for solar cell efficiency can be overcome if hot carriers can be harvested before they thermalize. Recently, carrier cooling time up to 100 picoseconds was observed in hybrid perovskites, but it is unclear whether these long-lived hot carriers can migrate long distance for efficient collection. We report direct visualization of hot-carrier migration in methylammonium lead iodide (CH3NH3PbI3) thin films by ultrafast transient absorption microscopy, demonstrating three distinct transport regimes. Quasiballistic transport was observed to correlate with excess kinetic energy, resulting in up to 230 nanometers transport distance that could overcome grain boundaries. The nonequilibrium transport persisted over tens of picoseconds and ~600 nanometers before reaching the diffusive transport limit. These results suggest potential applications of hot-carrier devices based on hybrid perovskites.

  8. Energy Models for One-Carrier Transport in Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Jerome, Joseph W.; Shu, Chi-Wang

    1991-01-01

    Moment models of carrier transport, derived from the Boltzmann equation, made possible the simulation of certain key effects through such realistic assumptions as energy dependent mobility functions. This type of global dependence permits the observation of velocity overshoot in the vicinity of device junctions, not discerned via classical drift-diffusion models, which are primarily local in nature. It was found that a critical role is played in the hydrodynamic model by the heat conduction term. When ignored, the overshoot is inappropriately damped. When the standard choice of the Wiedemann-Franz law is made for the conductivity, spurious overshoot is observed. Agreement with Monte-Carlo simulation in this regime required empirical modification of this law, or nonstandard choices. Simulations of the hydrodynamic model in one and two dimensions, as well as simulations of a newly developed energy model, the RT model, are presented. The RT model, intermediate between the hydrodynamic and drift-diffusion model, was developed to eliminate the parabolic energy band and Maxwellian distribution assumptions, and to reduce the spurious overshoot with physically consistent assumptions. The algorithms employed for both models are the essentially non-oscillatory shock capturing algorithms. Some mathematical results are presented and contrasted with the highly developed state of the drift-diffusion model.

  9. P type porous silicon resistivity and carrier transport

    SciTech Connect

    Ménard, S.; Fèvre, A.; Billoué, J.; Gautier, G.

    2015-09-14

    The resistivity of p type porous silicon (PS) is reported on a wide range of PS physical properties. Al/PS/Si/Al structures were used and a rigorous experimental protocol was followed. The PS porosity (P{sub %}) was found to be the major contributor to the PS resistivity (ρ{sub PS}). ρ{sub PS} increases exponentially with P{sub %}. Values of ρ{sub PS} as high as 1 × 10{sup 9} Ω cm at room temperature were obtained once P{sub %} exceeds 60%. ρ{sub PS} was found to be thermally activated, in particular, when the temperature increases from 30 to 200 °C, a decrease of three decades is observed on ρ{sub PS}. Based on these results, it was also possible to deduce the carrier transport mechanisms in PS. For P{sub %} lower than 45%, the conduction occurs through band tails and deep levels in the tissue surrounding the crystallites. When P{sub %} overpasses 45%, electrons at energy levels close to the Fermi level allow a hopping conduction from crystallite to crystallite to appear. This study confirms the potential of PS as an insulating material for applications such as power electronic devices.

  10. Time resolved imaging of carrier and thermal transport in silicon

    SciTech Connect

    D. H. Hurley; O. B. Wright; O. Matsuda; S. L. Shinde

    2010-01-01

    We use ultrashort optical pulses to microscopically image carrier and thermal diffusion in two spatial dimensions in pristine and mechanically polished surfaces of crystalline silicon. By decomposing changes in reflectivity in the latter sample into a transient component that varies with delay time and a steady state component that varies with pump chopping frequency, the influence of thermal diffusion is isolated from that of carrier diffusion and recombination. Additionally, studies using carrier injection density as a parameter are used to clearly identify the carrier recombination pathway.

  11. Excited state and charge-carrier dynamics in perovskite solar cell materials.

    PubMed

    Ponseca, Carlito S; Tian, Yuxi; Sundström, Villy; Scheblykin, Ivan G

    2016-02-26

    Organo-metal halide perovskites (OMHPs) have attracted enormous interest in recent years as materials for application in optoelectronics and solar energy conversion. These hybrid semiconductors seem to have the potential to challenge traditional silicon technology. In this review we will give an account of the recent development in the understanding of the fundamental light-induced processes in OMHPs from charge-photo generation, migration of charge carries through the materials and finally their recombination. Our and other literature reports on time-resolved conductivity, transient absorption and photoluminescence properties are used to paint a picture of how we currently see the fundamental excited state and charge-carrier dynamics. We will also show that there is still no fully coherent picture of the processes in OMHPs and we will indicate the problems to be solved by future research.

  12. Excited state and charge-carrier dynamics in perovskite solar cell materials

    NASA Astrophysics Data System (ADS)

    Ponseca, Carlito S., Jr.; Tian, Yuxi; Sundström, Villy; Scheblykin, Ivan G.

    2016-02-01

    Organo-metal halide perovskites (OMHPs) have attracted enormous interest in recent years as materials for application in optoelectronics and solar energy conversion. These hybrid semiconductors seem to have the potential to challenge traditional silicon technology. In this review we will give an account of the recent development in the understanding of the fundamental light-induced processes in OMHPs from charge-photo generation, migration of charge carries through the materials and finally their recombination. Our and other literature reports on time-resolved conductivity, transient absorption and photoluminescence properties are used to paint a picture of how we currently see the fundamental excited state and charge-carrier dynamics. We will also show that there is still no fully coherent picture of the processes in OMHPs and we will indicate the problems to be solved by future research.

  13. Charge accumulation due to spin transport in magnetic multilayers

    NASA Astrophysics Data System (ADS)

    Zhu, Yao-Hui; Xu, Deng-Hui; Geng, Ai-Cong

    2014-08-01

    Starting with the Valet-Fert theory of the current-perpendicular-to-plane giant magnetoresistance, we studied the charge accumulation due to spin transport in magnetic multilayers by solving Poisson's equation analytically. Our results show that, in ferromagnetic layers, the charge accumulation has two exponential terms with opposite signs and different decaying lengths: the Thomas-Fermi screening length (on the order of angstrom) and the spin diffusion length (tens of nm in 3d ferromagnetic metals). The charge accumulation on the scale of the screening length is spin-unpolarized and also present in spin-independent transport in nonmagnetic multilayers. However, the charge accumulation on the scale of the spin diffusion length is spin-polarized and shows up only in ferromagnetic layers. Our analysis also provides new insights into the widely used quasi-neutrality approximation, which neglects the charge accumulation.

  14. 47 CFR 69.111 - Tandem-switched transport and tandem charge.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... presumed reasonable if the incumbent local exchange carrier bases the charges on a weighted per-minute... (a)(1) of this section shall be presumed reasonable if the incumbent local exchange carrier bases the... presumed reasonable if the incumbent local exchange carrier bases the charges on a weighted...

  15. 47 CFR 69.111 - Tandem-switched transport and tandem charge.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... presumed reasonable if the incumbent local exchange carrier bases the charges on a weighted per-minute... (a)(1) of this section shall be presumed reasonable if the incumbent local exchange carrier bases the... presumed reasonable if the incumbent local exchange carrier bases the charges on a weighted...

  16. Understanding dispersive charge-transport in crystalline organic-semiconductors.

    PubMed

    Yavuz, Ilhan; Lopez, Steven A

    2016-12-21

    The effect of short-range order and dispersivity on charge-transport for organic crystalline semiconductors are important and unresolved questions. This exploration is the first to discern the role of short-range order on charge-transport for crystalline organic semiconductors. A multimode computational approach (including Molecular Dynamics and kinetic Monte Carlo simulations) is employed to understand the hole mobility dispersivity of crystalline organic semiconductors. Crystalline organic solids feature a mesoscale region where dispersive charge-transport dominates; our calculations show a clear transition of charge-mobility from non-dispersive to dispersive. An empirical relationship between the dispersive and non-dispersive transport transition region and ideal simulation box thickness is put forth. The dispersive to non-dispersive transition region occurs when energetic disorder approaches 72 meV. Non-dispersive transport is observed for simulation box sizes greater than 3.7 nm, which corresponds to approximately 12 π-stacked layers in typical π-stacked organic solids. A qualitative relationship is deduced between the variability of measured dispersive hole and variability of computed dispersive hole mobilities and system size. This relationship will guide future charge-transport investigations of condensed-phase organic systems.

  17. Simulation of charge transport in pixelated CdTe

    NASA Astrophysics Data System (ADS)

    Kolstein, M.; Ariño, G.; Chmeissani, M.; De Lorenzo, G.

    2014-12-01

    The Voxel Imaging PET (VIP) Pathfinder project intends to show the advantages of using pixelated semiconductor technology for nuclear medicine applications to achieve an improved image reconstruction without efficiency loss. It proposes designs for Positron Emission Tomography (PET), Positron Emission Mammography (PEM) and Compton gamma camera detectors with a large number of signal channels (of the order of 106). The design is based on the use of a pixelated CdTe Schottky detector to have optimal energy and spatial resolution. An individual read-out channel is dedicated for each detector voxel of size 1 × 1 × 2 mm3 using an application-specific integrated circuit (ASIC) which the VIP project has designed, developed and is currently evaluating experimentally. The behaviour of the signal charge carriers in CdTe should be well understood because it has an impact on the performance of the readout channels. For this purpose the Finite Element Method (FEM) Multiphysics COMSOL software package has been used to simulate the behaviour of signal charge carriers in CdTe and extract values for the expected charge sharing depending on the impact point and bias voltage. The results on charge sharing obtained with COMSOL are combined with GAMOS, a Geant based particle tracking Monte Carlo software package, to get a full evaluation of the amount of charge sharing in pixelated CdTe for different gamma impact points.

  18. Simulation of charge transport in pixelated CdTe

    PubMed Central

    Kolstein, M.; Ariño, G.; Chmeissani, M.; De Lorenzo, G.

    2014-01-01

    The Voxel Imaging PET (VIP) Pathfinder project intends to show the advantages of using pixelated semiconductor technology for nuclear medicine applications to achieve an improved image reconstruction without efficiency loss. It proposes designs for Positron Emission Tomography (PET), Positron Emission Mammography (PEM) and Compton gamma camera detectors with a large number of signal channels (of the order of 106). The design is based on the use of a pixelated CdTe Schottky detector to have optimal energy and spatial resolution. An individual read-out channel is dedicated for each detector voxel of size 1 × 1 × 2 mm3 using an application-specific integrated circuit (ASIC) which the VIP project has designed, developed and is currently evaluating experimentally. The behaviour of the signal charge carriers in CdTe should be well understood because it has an impact on the performance of the readout channels. For this purpose the Finite Element Method (FEM) Multiphysics COMSOL software package has been used to simulate the behaviour of signal charge carriers in CdTe and extract values for the expected charge sharing depending on the impact point and bias voltage. The results on charge sharing obtained with COMSOL are combined with GAMOS, a Geant based particle tracking Monte Carlo software package, to get a full evaluation of the amount of charge sharing in pixelated CdTe for different gamma impact points. PMID:25729404

  19. Simulation of charge transport in pixelated CdTe.

    PubMed

    Kolstein, M; Ariño, G; Chmeissani, M; De Lorenzo, G

    2014-12-01

    The Voxel Imaging PET (VIP) Pathfinder project intends to show the advantages of using pixelated semiconductor technology for nuclear medicine applications to achieve an improved image reconstruction without efficiency loss. It proposes designs for Positron Emission Tomography (PET), Positron Emission Mammography (PEM) and Compton gamma camera detectors with a large number of signal channels (of the order of 10(6)). The design is based on the use of a pixelated CdTe Schottky detector to have optimal energy and spatial resolution. An individual read-out channel is dedicated for each detector voxel of size 1 × 1 × 2 mm(3) using an application-specific integrated circuit (ASIC) which the VIP project has designed, developed and is currently evaluating experimentally. The behaviour of the signal charge carriers in CdTe should be well understood because it has an impact on the performance of the readout channels. For this purpose the Finite Element Method (FEM) Multiphysics COMSOL software package has been used to simulate the behaviour of signal charge carriers in CdTe and extract values for the expected charge sharing depending on the impact point and bias voltage. The results on charge sharing obtained with COMSOL are combined with GAMOS, a Geant based particle tracking Monte Carlo software package, to get a full evaluation of the amount of charge sharing in pixelated CdTe for different gamma impact points.

  20. Charge carrier mobilities in organic semiconductor crystals based on the spectral overlap.

    PubMed

    Stehr, Vera; Fink, Reinhold F; Deibel, Carsten; Engels, Bernd

    2016-09-05

    The prediction of substance-related charge-transport properties is important for the tayloring of new materials for organic devices, such as organic solar cells. Assuming a hopping process, the Marcus theory is frequently used to model charge transport. Here another approach, which is already widely used for exciton transport, is adapted to charge transport. It is based on the spectral overlap of the vibrational donor and acceptor spectra. As the Marcus theory it is derived from Fermi's Golden rule, however, it contains less approximations, as the molecular vibrations are treated quantum mechanically. In contrast, the Marcus theory reduces all vibrational degrees of freedom to one and treats its influence classically. The approach is tested on different acenes and predicts most of the experimentally available hole mobilities in these materials within a factor of 2. This represents a significant improvement to values obtained from Marcus theory which is qualitatively correct but frequently overestimates the mobilities by factors up to 10. Furthermore, the charge-transport properties of two derivatives of perylene bisimide are investigated. © 2016 Wiley Periodicals, Inc.

  1. Charge Carrier Conduction Mechanism in PbS Quantum Dot Solar Cells: Electrochemical Impedance Spectroscopy Study.

    PubMed

    Wang, Haowei; Wang, Yishan; He, Bo; Li, Weile; Sulaman, Muhammad; Xu, Junfeng; Yang, Shengyi; Tang, Yi; Zou, Bingsuo

    2016-07-20

    With its properties of bandgap tunability, low cost, and substrate compatibility, colloidal quantum dots (CQDs) are becoming promising materials for optoelectronic applications. Additionally, solution-processed organic, inorganic, and hybrid ligand-exchange technologies have been widely used in PbS CQDs solar cells, and currently the maximum certified power conversion efficiency of 9.9% has been reported by passivation treatment of molecular iodine. Presently, there are still some challenges, and the basic physical mechanism of charge carriers in CQDs-based solar cells is not clear. Electrochemical impedance spectroscopy is a monitoring technology for current by changing the frequency of applied alternating current voltage, and it provides an insight into its electrical properties that cannot be measured by direct current testing facilities. In this work, we used EIS to analyze the recombination resistance, carrier lifetime, capacitance, and conductivity of two typical PbS CQD solar cells Au/PbS-TBAl/ZnO/ITO and Au/PbS-EDT/PbS-TBAl/ZnO/ITO, in this way, to better understand the charge carriers conduction mechanism behind in PbS CQD solar cells, and it provides a guide to design high-performance quantum-dots solar cells.

  2. Glass transition dynamics and charge carrier mobility in conjugated polyfluorene thin films

    NASA Astrophysics Data System (ADS)

    Qin, Hui; Liu, Dan; Wang, Tao

    Conjugated polymers are commonly used in organic optoelectronic devices, e.g. organic photovoltaics (OPVs), light-emitting diodes (LEDs) and field effect transistors (FETs). In these devices, the conjugated polymers are prepared as thin films with thicknesses in the range of tens to hundreds of nanometers, and are interfaced with different function layers made from organic or inorganic materials. We have studied the glass transition temperature (Tg) of poly(9, 9-dioctylfluorene)-co-N-(1, 4-butylphenyl)diphenylamine) (TFB) thin films supported on different substrates, as well as their SCLC charge carrier mobility in photodiodes. Both Monotonic and non-monotonic Tg deviations are observed in TFB thin films supported on Si/SiOx and PEDOT:PSS, respectively. With low to moderate thermal crosslinking, the thickness dependent Tg deviation still exists, which diminishes in TFB films with a high crosslinking degree. The vertical charge carrier mobility of TFB thin films extracted from the SCLC measurements is found increase with film thickness, a value increases from 1 to 50 x 10-6 cm2 V-1 s-1 in the thickness range from 15 to 180 nm. Crosslinking was found to reduce the carrier mobility in TFB thin films. The Tg deviations are also discussed using the classic layered models in the literature. Our results provide a precise guide for the fabrication and design of high performance optoelectronic devices.

  3. Charge-transport anisotropy in black phosphorus: critical dependence on the number of layers.

    PubMed

    Banerjee, Swastika; Pati, Swapan K

    2016-06-28

    Phosphorene is a promising candidate for modern electronics because of the anisotropy associated with high electron-hole mobility. Additionally, superior mechanical flexibility allows the strain-engineering of various properties including the transport of charge carriers in phosphorene. In this work, we have shown the criticality of the number of layers to dictate the transport properties of black phosphorus. Trilayer black phosphorus (TBP) has been proposed as an excellent anisotropic material, based on the transport parameters using Boltzmann transport formalisms coupled with density functional theory. The mobilities of both the electron and the hole are found to be higher along the zigzag direction (∼10(4) cm(2) V(-1) s(-1) at 300 K) compared to the armchair direction (∼10(2) cm(2) V(-1) s(-1)), resulting in the intrinsic directional anisotropy. Application of strain leads to additional electron-hole anisotropy with 10(3) fold higher mobility for the electron compared to the hole. Critical strain for maximum anisotropic response has also been determined. Whether the transport anisotropy is due to the spatial or charge-carrier has been determined through analyses of the scattering process of electrons and holes, and their recombination as well as relaxation dynamics. In this context, we have derived two descriptors (S and F(k)), which are general enough for any 2D or quasi-2D systems. Information on the scattering involving purely the carrier states also helps to understand the layer-dependent photoluminescence and electron (hole) relaxation in black phosphorus. Finally, we justify trilayer black phosphorus (TBP) as the material of interest with excellent transport properties.

  4. Charge Transport at Ti-Doped Hematite (001)/Aqueous Interfaces

    SciTech Connect

    Chatman, Shawn ME; Pearce, Carolyn I.; Rosso, Kevin M.

    2015-03-10

    Solid-state transport and electrochemical properties of Ti-doped hematite (001) epitaxial thin films (6.0, 8.3, and 16.6 at% Ti) were probed to achieve a better understanding of doped hematite for photoelectrochemical (PEC) applications. Room temperature resistivity measurements predict a resistivity minimum near 10 at% Ti doping, which can be rationalized as maximizing charge compensating Fe2+ concentration and Fe3+ electron accepting percolation pathways simultaneously. Temperature dependent resistivity data are consistent with small polaron hopping, revealing an activation energy that is Ti concentration dependent and commensurate with previously reported values (≈ 0.11 eV). In contact with inert electrolyte, linear Mott-Schottky data at various pH values indicate that there is predominantly a single donor for Ti-doped hematite at 6.0 at% Ti and 16.6 at% Ti concentrations. Two slope Mott-Schottky data at pH extremes indicate the presence of a second donor or surface state in the 8.3 at% Ti-doped film, with an energy level ≈ 0.7 eV below the Fermi level. Mott-Schottky plots indicate pH and Ti concentration dependent flatband potentials of -0.4 to -1.1 V vs. Ag/AgCl, commensurate with previously reported data. Flatband potentials exhibited super-Nernstian pH dependence ranging from -69.1 to -101.0 mV/pH. Carrier concentration data indicate that the Fermi energy of the Ti-doped system is Ti concentration dependent, with a minimum of 0.15 eV near 10 at% Ti. These energy level data allow us to construct an energy band diagram for Ti-doped hematite electrode/electrolyte interfaces, and to determine a Ti-doping concentration t

  5. Importance of Depletion Width on Charge Transport and Interfacial Recombination in Extremely Thin Absorber Solar Cells

    NASA Astrophysics Data System (ADS)

    Edley, Michael; Jones, Treavor; Baxter, Jason

    The dynamics of charge carrier transport and recombination and their dependence on physical and electrochemical length scales in extremely thin absorber (ETA) solar cells is vital to cell design. We used J-V characterization, transient photocurrent / photovoltage, and electrochemical impedance spectroscopy to study electron transport and interfacial recombination in ETA cell. ETA cells were composed of ZnO nanowires coated with an ultrathin (5 nm) CdS buffer layer and CdSe absorbers with thicknesses of 10 - 40 nm, with polysulfide electrolyte. In thinner absorbers near short circuit, the depletion region can extend radially into the nanowire, inhibiting interfacial recombination rate. However, depleting the periphery of the nanowire reduces the cross sectional area for charge transport, resulting in longer characteristic collection times. Thicker absorbers suffered more significant bias-dependent collection, and we conclude that slight radial penetration of the depletion region into the nanowires enhances charge collection. This work highlights the importance of considering the impact of depletion width on charge transport and interfacial recombination in the design of liquid junction, semiconductor-sensitized solar cells.

  6. Geant4 Simulations of SuperCDMS iZip Detector Charge Carrier Propagation and FET Readout

    NASA Astrophysics Data System (ADS)

    Agnese, Rob

    2013-04-01

    The SuperCDMS experiment aims to directly detect dark matter particles called WIMPs (Weakly Interacting Massive Particles). The detectors collect phonon and ionization energy of incident particles for analysis. The SuperCDMS Detector Monte Carlo group is implementing low temperature phonon and ionization simulations in Geant4 in order to study the response of the detectors to incident events. Phonons and electron-hole pairs are tracked in a low temperature crystal detector. The resulting TES phonon readout, as well as the FET charge readout are simulated. The Geant4 framework is well-suited to these tasks. The charge transport in the presence of a complex electric field is performed by calculating a tetrahedral mesh of potentials across the crystal volume. To calculate the FET readout, the Shockley-Ramo theorem is applied to simulate the current in the FET. The focus of this presentation will be on incorporating and using the software package, Qhull, to calculate a tetrahedral mesh from known potentials and then using barycentric coordinates to perform a linear interpolation to calculate the field. After calculating the field at each charge carrier's position, the Shockley-Ramo theorem is applied and the previous triangulation technique is performed to simulate the FET response

  7. Collective transport of charges in charge density wave systems based on traveling soliton lattices

    NASA Astrophysics Data System (ADS)

    Rojo-Bravo, A.; Jacques, V. L. R.; Le Bolloc'h, D.

    2016-11-01

    Solitons are peculiar excitations that appear in a wide range of nonlinear systems such as in fluids or optics. We show here that the collective transport of charges observed in charge density wave (CDW) systems can be explained by using a similar theory based on a traveling soliton lattice. A coherent x-ray diffraction experiment performed in the sliding state of a CDW material reveals peculiar diffraction patterns in good agreement with this assumption. Therefore, the collective transport of charges in CDW systems may be due to a nonlinear interaction leading to a self-localized excitation, carrying charges without deformation through the sample, on top of the CDW ground state. This single theory explains why charges remain spatially correlated over very long distances and reconciles the main features of sliding CDW systems observed by transport measurements and diffraction. This approach highlights a new type of charge transport in CDW systems and opens perspectives in controlling correlated charges without dispersion over macroscopic distances.

  8. Kinetics of photo-activated charge carriers in Sn:CdS

    NASA Astrophysics Data System (ADS)

    Patidar, Manju Mishra; Panda, Richa; Gorli, V. R.; Gangrade, Mohan; Nath, R.; Ganesan, V.

    2016-05-01

    Kinetics of the photo-activated charge carriers has been investigated in Tin substituted Cadmium Sulphide, Cd1-xSnxS (x=0, 0.05, 0.10 and 0.15), thin films prepared by spray pyrolysis. X-Ray Diffraction shows an increase in strain that resulted in the decreased crystallite size upon Sn substitution. At the first sight, the photo current characteristics show a quenching effect on Sn substitution. However, survival of persistent photocurrents is seen even up to 15% of Sn substitution. Transient photo current decay could be explained with a 2τ relaxation model. CdS normally has an n-type character and the Sn doping expected to inject hole carriers. The two fold increase in τ1, increase in activation energy and the decrease in photocurrents upon Sn substitution point towards a band gap cleaning scenario that include compensation and associated carrier injection dynamics. In addition Atomic Force Microscopy shows a drastic change in microstructure that modulates the carrier dynamics as a whole.

  9. Ion and water transport in charge-modified graphene nanopores

    NASA Astrophysics Data System (ADS)

    Qiu, Ying-Hua; Li, Kun; Chen, Wei-Yu; Si, Wei; Tan, Qi-Yan; Chen, Yun-Fei

    2015-10-01

    Porous graphene has a high mechanical strength and an atomic-layer thickness that makes it a promising material for material separation and biomolecule sensing. Electrostatic interactions between charges in aqueous solutions are a type of strong long-range interaction that may greatly influence fluid transport through nanopores. In this study, molecular dynamic simulations were conducted to investigate ion and water transport through 1.05-nm diameter monolayer graphene nanopores, with their edges charge-modified. Our results indicated that these nanopores are selective to counterions when they are charged. As the charge amount increases, the total ionic currents show an increase-decrease profile while the co-ion currents monotonically decrease. The co-ion rejection can reach 76.5% and 90.2% when the nanopores are negatively and positively charged, respectively. The Cl- ion current increases and reaches a plateau, and the Na+ current decreases as the charge amount increases in systems in which Na+ ions act as counterions. In addition, charge modification can enhance water transport through nanopores. This is mainly due to the ion selectivity of the nanopores. Notably, positive charges on the pore edges facilitate water transport much more strongly than negative charges. Project supported by the National Basic Research Program of China (Grant Nos. 2011CB707601 and 2011CB707605), the National Natural Science Foundation of China (Grant No. 50925519), the Fundamental Research Funds for the Central Universities, Funding of Jiangsu Provincial Innovation Program for Graduate Education, China (Grant No. CXZZ13_0087), and the Scientific Research Foundation of Graduate School of Southeast University (Grant No. YBJJ 1322).

  10. Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors

    PubMed Central

    Chu, Leiqiang; Schmidt, Hennrik; Pu, Jiang; Wang, Shunfeng; Özyilmaz, Barbaros; Takenobu, Taishi; Eda, Goki

    2014-01-01

    Charge transport in MoS2 in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS2 emerge in the high density regime where conduction occurs via extended states. Here, we investigate the transport properties of mechanically exfoliated mono-, bi-, and trilayer MoS2 sheets over a wide range of carrier densities realized by a combination of ion gel top gate and SiO2 back gate, which allows us to achieve high charge carrier (>1013 cm−2) densities. We discuss the gating properties of the devices as a function of layer thickness and demonstrate resistivities as low as 1 kΩ for monolayer and 420 Ω for bilayer devices at 10 K. We show that from the capacitive coupling of the two gates, quantum capacitance can be roughly estimated to be on the order of 1 μF/cm2 for all devices studied. The temperature dependence of the carrier mobility in the high density regime indicates that short-range scatterers limit charge transport at low temperatures. PMID:25465059

  11. Stress Activation and Propagation of Electronic Charge Carriers in Igneous Rocks

    NASA Astrophysics Data System (ADS)

    Ling, J.; Freund, F. T.

    2007-12-01

    Igneous and high-grade metamorphic rocks in the Earth's crust generate electric currents when subjected to deviatoric stresses. The reason is that these rocks contain dormant electronic charge carriers in the form of peroxy links. Peroxy links are sites in the crystal structures of the constituent minerals where oxygen anions have converted from their common 2- valence state to the 1- valence state, O3X-OO-XO3 with X=Si4+, Al3+ etc. As rocks are stressed and dislocations sweep through the mineral grains, the peroxy links break up, activating electrons and pholes ("phole" is an abbreviation for "positive hole", a defect electron on the oxygen sublattice, chemically O- in a matrix of O2-). The pholes are mobile electronic charge carriers that can spread out of the stressed rock into the surrounding unstressed rock. They travel via energy levels at the upper edge of the valence bands, cross grain boundaries and achieve a phase velocity on the order of 200±50 m/sec, consistent with phonon-assisted electron hopping. Due to mutual repulsion inside the rock volume the pholes spread to the surface, where they build up a positive surface charge. The surface charge can be measured with a non-contact capacitive sensor. If a Cu contact is applied to the surface of the rock, electrons are injected from ground into the rock in response to the evolving positive charge on the rock surface. We modeled surface potentials and burst-like electron injections following low and medium velocity impact experiments, 100 m/sec and 1.5 km/sec respectively.

  12. Charge Transport Properties in Polymer Brushes

    NASA Astrophysics Data System (ADS)

    Moog, Mark; Tsui, Frank; Vonwald, Ian; You, Wei

    Electrical transport properties in poly(3-methyl)thiophene (P3MT) brushes have been studied. The P3MT brushes correspond to a new type of surface-tethered, vertically oriented conjugated molecular wires, sandwiched between two metallic electrodes to form the electrode-molecule-electrode (EME) devices. P3MT is a highly conjugated polymer, a ''workhorse'' material for organic electronics and photonics. The P3MT brushes were grown on ITO surfaces with controlled length (between 2 and 100 nm). The top electrodes were transfer-printed Au films with lateral dimensions between 200 nm and 50 μm. I-V and differential conductance measurements were performed using conductive AFM and 4-terminal techniques. Tunneling and field-emission measurements in EME devices with molecular lengths < 5 nm show HOMO mediated direct hole tunneling with energy barriers of 0.3 and 0.5 eV at the respective interfaces with ITO and Au. The transport properties in longer brushes are indicative of the two quasi-Ohmic interfaces with a characteristic offset in the conductance minimum of 0.12 V biased toward the ITO. Temperature dependent parameters have been examined at various molecular lengths. The drift mobility and the interplay between intra- and intermolecular transport have been investigated.

  13. Effect of surface charge of immortalized mouse cerebral endothelial cell monolayer on transport of charged solutes.

    PubMed

    Yuan, Wei; Li, Guanglei; Gil, Eun Seok; Lowe, Tao Lu; Fu, Bingmei M

    2010-04-01

    Charge carried by the surface glycocalyx layer (SGL) of the cerebral endothelium has been shown to significantly modulate the permeability of the blood-brain barrier (BBB) to charged solutes in vivo. The cultured monolayer of bEnd3, an immortalized mouse cerebral endothelial cell line, is becoming a popular in vitro BBB model due to its easy growth and maintenance of many BBB characteristics over repeated passages. To test whether the SGL of bEnd3 monolayer carries similar charge as that in the intact BBB and quantify this charge, which can be characterized by the SGL thickness (L(f)) and charge density (C(mf)), we measured the solute permeability of bEnd3 monolayer to neutral solutes and to solutes with similar size but opposite charges: negatively charged alpha-lactalbumin (-11) and positively charged ribonuclease (+3). Combining the measured permeability data with a transport model across the cell monolayer, we predicted the L(f) and the C(mf) of bEnd3 monolayer, which is approximately 160 nm and approximately 25 mEq/L, respectively. We also investigated whether orosomucoid, a plasma glycoprotein modulating the charge of the intact BBB, alters the charge of bEnd3 monolayer. We found that 1 mg/mL orosomucoid would increase SGL charge density of bEnd3 monolayer to approximately 2-fold of its control value.

  14. Monte Carlo Simulations of Charge Transport in 2D Organic Photovoltaics.

    PubMed

    Gagorik, Adam G; Mohin, Jacob W; Kowalewski, Tomasz; Hutchison, Geoffrey R

    2013-01-03

    The effect of morphology on charge transport in organic photovoltaics is assessed using Monte Carlo. In isotopic two-phase morphologies, increasing the domain size from 6.3 to 18.3 nm improves the fill factor by 11.6%, a result of decreased tortuosity and relaxation of Coulombic barriers. Additionally, when small aggregates of electron acceptors are interdispersed into the electron donor phase, charged defects form in the system, reducing fill factors by 23.3% on average, compared with systems without aggregates. In contrast, systems with idealized connectivity show a 3.31% decrease in fill factor when domain size was increased from 4 to 64 nm. We attribute this to a decreased rate of exciton separation at donor-acceptor interfaces. Finally, we notice that the presence of Coulomb interactions increases device performance as devices become smaller. The results suggest that for commonly found isotropic morphologies the Coulomb interactions between charge carriers dominates exciton separation effects.

  15. Frequency dependent magneto-transport in charge transfer Co(II) complex

    NASA Astrophysics Data System (ADS)

    Shaw, Bikash Kumar; Saha, Shyamal K.

    2014-09-01

    A charge transfer chelated system containing ferromagnetic metal centers is the ideal system to investigate the magneto-transport and magneto-dielectric effects due to the presence of both electronic as well as magnetic properties and their coupling. Magneto-transport properties in materials are usually studied through dc charge transport under magnetic field. As frequency dependent conductivity is an essential tool to understand the nature of carrier wave, its spatial extension and their mutual interaction, in the present work, we have investigated frequency dependent magneto-transport along with magnetization behavior in [Co2(II)-(5-(4-PhMe)-1,3,4-oxadiazole-H+-2-thiolate)5](OAc)4 metal complex to elucidate the nature of above quantities and their response under magnetic field in the transport property. We have used the existing model for ac conduction incorporating the field dependence to explain the frequency dependent magneto-transport. It is seen that the frequency dependent magneto-transport could be well explained using the existing model for ac conduction.

  16. Charge Carrier Dynamics of Quantum Confined Semiconductor Nanoparticles Analyzed via Transient Absorption Spectroscopy

    NASA Astrophysics Data System (ADS)

    Thibert, Arthur Joseph, III

    Semiconductor nanoparticles are tiny crystalline structures (typically range from 1 - 100 nm) whose shape in many cases can be dictated through tailored chemical synthesis with atomic scale precision. The small size of these nanoparticles often results in quantum confinement (spatial confinement of wave functions), which imparts the ability to manipulate band-gap energies thus allowing them to be optimally engineered for different applications (i.e., photovoltaics, photocatalysis, imaging). However, charge carriers excited within these nanoparticles are often involved in many different processes: trapping, trap migration, Auger recombination, non-radiative relaxation, radiative relaxation, oxidation / reduction, or multiple exciton generation. Broadband ultrafast transient absorption laser spectroscopy is used to spectrally resolve the fate of excited charge carriers in both wavelength and time, providing insight as to what synthetic developments or operating conditions will be necessary to optimize their efficiency for certain applications. This thesis outlines the effort of resolving the dynamics of excited charge carriers for several Cd and Si based nanoparticle systems using this experimental technique. The thesis is organized into five chapters and two appendices as indicated below. Chapter 1 provides a brief introduction to the photophysics of semiconductor nanoparticles. It begins by defining what nanoparticles, semiconductors, charge carriers, and quantum confinement are. From there it details how the study of charge carrier dynamics within nanoparticles can lead to increased efficiency in applications such as photocatalysis. Finally, the experimental methodology associated with ultrafast transient absorption spectroscopy is introduced and its power in mapping charge carrier dynamics is established. Chapter 2 (JPCC, 19647, 2011) introduces the first of the studied samples: water-solubilized 2D CdSe nanoribbons (NRs), which were synthesized in the Osterloh

  17. Experimental measurements of charge carrier mobility: lifetime products for large sample of pixilated CZT detectors

    NASA Astrophysics Data System (ADS)

    Vadawale, S. V.; Shanmugam, M.; Purohit, Shishir; Acharya, Y. B.; Sudhakar, Manju

    2012-07-01

    Cadmium-Zinc-Telluride (CZT) is thought to be a primary work horse for hard X-ray astronomy in future. Due to the relatively large band-gap, it offers near room temperature operation while maintaining much better energy resolution then scintillator detectors operating in similar energy range. Further, CZT detectors are available in the form of pixilated detectors with area up to few cm2 and hence it is possible to realize very large detector area by having an array of such pixilated CZT detectors. However, it is well known that the energy spectrum of mono-energetic X-ray measured by CZT detectors does not have a Gaussian shape but has significant low-energy tail. This is mainly due to relatively poor mobility and small life time of the charge carriers, particularly of holes, in the CZT crystals. Thus, in order to understand spectral response for a large array of CZT detectors consisting of multiple elements / pixels, it is essential to characterize the mobility-lifetime products of charge carriers for each individual elements / pixels. Here we present experimental measurements of charge carrier mobility-lifetime products for large sample of multi-pixel CZT detectors. The mobility-lifetime products are measured by simultaneously fitting a ‘CZT line’ model to pixel wise spectra of 122 keV X-rays from 57Co at three different bias voltages. These were carried out as a part of selection of CZT detector modules for the “High Energy X-ray spectrometer (HEX)” onboard Indian moon mission - Chandrayaan-1.

  18. Transportable charge in a periodic alternating gradient system

    SciTech Connect

    Lee, E.P.; Fessenden, T.J.; Laslett, L.J.

    1985-05-01

    A simple set of formulas is derived which relate emittance, line charge density, matched maximum and average envelope radii, occupancy factors, and the (space charge) depressed and vacuum values of tune. This formulation is an improvement on the smooth limit approximation; deviations from exact (numerically determined) relations are on the order of +-2%, while the smooth limit values are in error by up to +-30%. This transport formalism is used to determine the limits of transportable line charge density in an electrostatic quadrupole array, with specific application to the low energy portion of the High Temperature Experiment of Heavy Ion Fusion Accelerator Research. The line charge density limit is found to be essentially proportional to the voltage on the pole faces and the fraction of occupied aperture area. A finite injection energy (greater than or equal to 2 MeV) is required to realize this limit, independent of particle mass.

  19. Enhanced charge carrier generation in dye sensitized solar cells by nanoparticle plasmons

    NASA Astrophysics Data System (ADS)

    Hägglund, Carl; Zäch, Michael; Kasemo, Bengt

    2008-01-01

    An interesting possibility to improve the conversion and cost efficiencies of photovoltaic solar cells is to exploit the large optical cross sections of localized (nanoparticle) surface plasmon resonances (LSPRs). We have investigated this prospect for dye sensitized solar cells. Photoconductivity measurements were performed on flat TiO2 films, sensitized by a combination of dye molecules and arrays of nanofabricated elliptical gold disks. An enhanced dye charge carrier generation rate was found and shown to derive from the LSPR contribution by means of the polarization dependent resonance frequency in the anisotropic, aligned gold disks.

  20. Influence of Exciton Lifetime on Charge Carrier Dynamics in an Organic Heterostructure

    SciTech Connect

    Agrawal, Kanika L.; Sykes, Matthew E.; An, Kwang Hyup; Frieberg, Bradley; Green, P. F.; Shtein, Max

    2013-03-18

    Interactions between charge carriers and excitons, as well as between excitons and optical cavity modes in organic optoelectronic devices are fundamental to their operational limits and chief in preventing the realization of certain phenomena, such as electrically pumped organic lasing. We uncovered a previously unreported phenomenon, wherein optical cavity-modulated exciton decay rate leads to a concomitant modulation in the electrical current of an archetypal NPD/Alq₃ organic light emitting device operated in forward bias. The magnitude of this variation is sensitive to the local dielectric environment of the device and is found to be as large as 15%.

  1. Long-lived charge carrier dynamics in polymer/quantum dot blends and organometal halide perovskites

    NASA Astrophysics Data System (ADS)

    Nagaoka, Hirokazu

    Solution-processable semiconductors offer a potential route to deploy solar panels on a wide scale, based on the possibility of reduced manufacturing costs by using earth-abundant materials and inexpensive production technologies, such as inkjet or roll-to-roll printing. Understanding the fundamental physics underlying device operation is important to realize this goal. This dissertation describes studies of two kinds of solar cells: hybrid polymer/PbS quantum dot solar cells and organometal halide perovskite solar cells. Chapter two discusses details of the experimental techniques. Chapter three and four explore the mechanisms of charge transfer and energy transfer spectroscopically, and find that both processes contribute to the device photocurrent. Chapter four investigates the important question of how the energy level alignment of quantum dot acceptors affects the operation of hybrid polymer/quantum dot solar cells, by making use of the size-tunable energy levels of PbS quantum dots. We observe that long-lived charge transfer yield is diminished at larger dot sizes as the energy level offset at the polymer/quantum dot interface is changed through decreasing quantum confinement using a combination of spectroscopy and device studies. Chapter five discusses the effects of TiO2 surface chemistry on the performance of organometal halide perovskite solar cells. Specifically, chapter five studies the effect of replacing the conventional TiO2 electrode with Zr-doped TiO2 (Zr-TiO2). We aim to explore the correlation between charge carrier dynamics and device studies by incorporating zirconium into TiO2. We find that, compared to Zr-free controls, solar cells employing Zr-TiO2 give rise to an increase in overall power conversion efficiency, and a decrease in hysteresis. We also observe longer carrier lifetimes and higher charge carrier densities in devices on Zr-TiO2 electrodes at microsecond times in transient photovoltage experiments, as well as at longer persistent

  2. Carrier transport in graphite/Si{sub 3}N{sub 4}-nanobelt/PtIr Schottky barrier diodes

    SciTech Connect

    Bi, Jinghui; Wei, Guodong; Shang, Minghui; Gao, Fengmei; Yang, Weiyou E-mail: weiyouyang@tsinghua.org.cn; Tang, Bin E-mail: weiyouyang@tsinghua.org.cn

    2014-11-10

    Understanding the roles of contacts and interfaces between metals and semiconductors is critically important for exploring nanostructure-based nanodevices. The present study shed some light on the dominated mechanism of size-dependent carrier transfer in the Schottky barrier diodes configured by the Pt-Ir/Si{sub 3}N{sub 4}-nanobelt/graphite (metal-semiconductor-metal (MSM)) sandwiched structure via a conductive atomic force microscopy using nanobelts with various thicknesses. The observed I-V behaviors suggested that the charge transports under the low and high biases were dominated by the reverse-biased Schottky barrier and space-charge-limited current (SCLC), respectively. The intermediate region between the low and high biases presented the transition between the Ohmic and SCLC behaviors, in which the ≡Si and =N dangling bonds acted as the defects within the Si{sub 3}N{sub 4} nanobelt surface are predominant in the charge transfer.

  3. Interactive design environment transportation channel of relativistic charged particle beams

    NASA Astrophysics Data System (ADS)

    Osadchuk, I. O.; Averyanov, G. P.; Budkin, V. A.

    2017-01-01

    Considered a modern implementation of a computer environment for the design of channels of transportation of high-energy charged particle beams. The environment includes a software package for the simulation of the dynamics of charged particles in the channel, operating means for changing parameters of the channel, the elements channel optimization and processing of the output characteristics of the beam with the graphical output the main output parameters.

  4. The role of charge-transfer integral in determining and engineering the carrier mobilities of 9,10-di(2-naphthyl)anthracene compounds

    NASA Astrophysics Data System (ADS)

    Tse, S. C.; So, S. K.; Yeung, M. Y.; Lo, C. F.; Wen, S. W.; Chen, C. H.

    2006-05-01

    The charge transporting properties of t-butylated 9,10-di(2-naphthyl)anthracene (ADN) compounds have been investigated experimentally and computationally in relation to their molecular structures. The ADN compounds are found to be ambipolar with both electron and hole mobilities in the range of 1-4 × 10 -7 cm 2 V -1 s -1 (electric field 0.5-0.8 MV/cm). As the degree of t-butylation increases, the carrier mobility decreases progressively. The mobility reduction was examined by Marcus theory of reorganization energies. All ADN compounds possess similar reorganization energies of ˜0.3 eV. The reduction of carrier mobilities with increasing t-butylation can be attributed to a decrease in the charge-transfer integral or the wavefunction overlap.

  5. Elastic tunneling charge transport mechanisms in silicon quantum dots /SiO{sub 2} thin films and superlattices

    SciTech Connect

    Illera, S. Prades, J. D.; Cirera, A.

    2015-05-07

    The role of different charge transport mechanisms in Si/SiO{sub 2} structures has been studied. A theoretical model based on the Transfer Hamiltonian Formalism has been developed to explain experimental current trends in terms of three different elastic tunneling processes: (1) trap assisted tunneling; (2) transport through an intermediate quantum dot; and (3) direct tunneling between leads. In general, at low fields carrier transport is dominated by the quantum dots whereas, for moderate and high fields, transport through deep traps inherent to the SiO{sub 2} is the most relevant process. Besides, current trends in Si/SiO{sub 2} superlattice structure have been properly reproduced.

  6. Snapshots of the retarded interaction of charge carriers with ultrafast fluctuations in cuprates

    NASA Astrophysics Data System (ADS)

    Dal Conte, S.; Vidmar, L.; Golež, D.; Mierzejewski, M.; Soavi, G.; Peli, S.; Banfi, F.; Ferrini, G.; Comin, R.; Ludbrook, B. M.; Chauviere, L.; Zhigadlo, N. D.; Eisaki, H.; Greven, M.; Lupi, S.; Damascelli, A.; Brida, D.; Capone, M.; Bonča, J.; Cerullo, G.; Giannetti, C.

    2015-05-01

    One of the pivotal questions in the physics of high-temperature superconductors is whether the low-energy dynamics of the charge carriers is mediated by bosons with a characteristic timescale. This issue has remained elusive as electronic correlations are expected to greatly accelerate the electron-boson scattering processes, confining them to the very femtosecond timescale that is hard to access even with state-of-the-art ultrafast techniques. Here we simultaneously push the time resolution and frequency range of transient reflectivity measurements up to an unprecedented level, enabling us to directly observe the ~16 fs build-up of the effective electron-boson interaction in hole-doped copper oxides. This extremely fast timescale is in agreement with numerical calculations based on the t-J model and the repulsive Hubbard model, in which the relaxation of the photo-excited charges is achieved via inelastic scattering with short-range antiferromagnetic excitations.

  7. Analysis of carrier transport in quaterrylene thin film transistors formed by ultraslow vacuum deposition

    NASA Astrophysics Data System (ADS)

    Hayakawa, Ryoma; Petit, Matthieu; Chikyow, Toyohiro; Wakayama, Yutaka

    2008-07-01

    Quaterrylene field-effect transistors (FETs) with top-contact Au electrodes were formed on a SiO2 (200nm )/p-Si (001) substrate by an ultraslow vacuum deposition technique, and their carrier transport was investigated. The quaterrylene FETs showed typical p-channel transistor behavior. The dependence of carrier mobility on grain size, film thickness, and temperature was examined to gain insight into the transport mechanism. Carrier mobility increased with grain size, showing that carrier transport was limited by grain boundaries. Temperature dependence in the range from 300to60K was divided into two distinct behaviors. Above 210K, carrier mobility showed thermally activated behavior, with energies of 100-150meV required to overcome the potential barriers at grain boundaries. In contrast, the conduction mechanism became tunnel-transfer-like below 210K. In the low temperature range, tunnel transfer through potential barriers at grain boundaries predominated over the thermally activated type. The change in carrier mobility was correlated with film thickness. Carrier mobility rose sharply with increasing thickness in the two-dimensional (2D) growth region, followed by saturation at 3 or 4 ML, where the growth process changed from 2D to three-dimensional mode. This result reveals that the first few layers of 2D growth work as an effective transistor channel. Enhancement in 2D growth in the vertical direction is crucial to improving carrier transport.

  8. Origin of traps and charge transport mechanism in hafnia

    SciTech Connect

    Islamov, D. R. Gritsenko, V. A.; Cheng, C. H.; Chin, A.

    2014-12-01

    In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO{sub 2}. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. The thermal trap energy of 1.25 eV in HfO{sub 2} was determined based on the charge transport experiments.

  9. Simulation of bipolar charge transport in nanocomposite polymer films

    NASA Astrophysics Data System (ADS)

    Lean, Meng H.; Chu, Wei-Ping L.

    2015-03-01

    This paper describes 3D particle-in-cell simulation of bipolar charge injection and transport through nanocomposite film comprised of ferroelectric ceramic nanofillers in an amorphous polymer matrix. The classical electrical double layer (EDL) model for a monopolar core is extended (eEDL) to represent the nanofiller by replacing it with a dipolar core. Charge injection at the electrodes assumes metal-polymer Schottky emission at low to moderate fields and Fowler-Nordheim tunneling at high fields. Injected particles migrate via field-dependent Poole-Frenkel mobility and recombine with Monte Carlo selection. The simulation algorithm uses a boundary integral equation method for solution of the Poisson equation coupled with a second-order predictor-corrector scheme for robust time integration of the equations of motion. The stability criterion of the explicit algorithm conforms to the Courant-Friedrichs-Levy limit assuring robust and rapid convergence. The model is capable of simulating a wide dynamic range spanning leakage current to pre-breakdown. Simulation results for BaTiO3 nanofiller in amorphous polymer matrix indicate that charge transport behavior depend on nanoparticle polarization with anti-parallel orientation showing the highest leakage conduction and therefore lowest level of charge trapping in the interaction zone. Charge recombination is also highest, at the cost of reduced leakage conduction charge. The eEDL model predicts the meandering pathways of charge particle trajectories.

  10. Charge transport in a zigzag silicene nanoribbon

    NASA Astrophysics Data System (ADS)

    Mehrotra, Nakul; Kumar, Niraj; Sen, Arijit

    2013-02-01

    Nanoscale transport properties of a zigzag silicene nanoribbon (zSiNR) are studied using first-principles calculations based on the non-equilibrium Green's function approach. Our theoretical analysis demonstrates how the scattering wavefunctions in the device region can shed light on the conductance behavior of a nanoelectronic device, made up of 3-zSiNR, spanning the width of three hexagons. The lowering of conductance at 100 mV bias is due mainly to the dominant character of the lowest unoccupied molecular orbital (LUMO) in the transmission profile. A zSiNR, having higher conductance than germanene, can thus be a potential candidate for silicon-based nanoelectronic devices due to its rich optoelectronic properties.

  11. 14 CFR 234.13 - Reports by air carriers on incidents involving animals during air transport.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... carrier that provides scheduled passenger air transportation shall, within 15 days of the end of the month... Consumer Protection Division a report on any incidents involving the loss, injury, or death of an...

  12. 14 CFR 234.13 - Reports by air carriers on incidents involving animals during air transport.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... carrier that provides scheduled passenger air transportation shall, within 15 days of the end of the month... Consumer Protection Division a report on any incidents involving the loss, injury, or death of an...

  13. 14 CFR 234.13 - Reports by air carriers on incidents involving animals during air transport.

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... carrier that provides scheduled passenger air transportation shall, within 15 days of the end of the month... Consumer Protection Division a report on any incidents involving the loss, injury, or death of an...

  14. 14 CFR 234.13 - Reports by air carriers on incidents involving animals during air transport.

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... carrier that provides scheduled passenger air transportation shall, within 15 days of the end of the month... Consumer Protection Division a report on any incidents involving the loss, injury, or death of an...

  15. 14 CFR 234.13 - Reports by air carriers on incidents involving animals during air transport.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... carrier that provides scheduled passenger air transportation shall, within 15 days of the end of the month... Consumer Protection Division a report on any incidents involving the loss, injury, or death of an...

  16. Remote joule heating assisted carrier transport in MWCNTs probed at nanosecond time scale.

    PubMed

    Mishra, Abhishek; Shrivastava, Mayank

    2016-10-19

    Quantum model of joule heating relies on electron-phonon scattering in the high field region (hot side contact), which locally increases phonon population and forms hot spots. Hot spots in the high field region are known to suffer carrier transport. In this work, for the first time we report remote joule heating of the cold side contact, i.e. zero electric field region, through multi-walled CNTs (MWCNTs), which is discovered to assist in carrier transport through the MWCNT channels. To precisely capture the dynamics of remote joule heating assisted carrier transport, MWCNTs are probed at nanosecond time scales. This leverages investigations at time scales comparable to characteristic thermal diffusion times and allows electron-phonon interactions and the nature of carrier transport to be probed under non-equilibrium conditions.

  17. Charge transport and velocity distribution in ambipolar organic thin film Transistors based on a diketopyrrolopyrrole-benzothiadiazole copolymer

    NASA Astrophysics Data System (ADS)

    Ha, Tae-Jun; Sonar, Prashant; Singh, Samarendra Pratap; Dodabalapur, Ananth

    2011-03-01

    There have been reports of charge transport mechanisms in organic thin film transistors (OTFTs) focusing on steady-state characteristics but these measurements provide limited information. Time-resolved measurements can provide additional information in understanding transport mechanisms but existing reports have focused on unipolar organic characteristics. No previous reports on ambipolar organic devices have involved entire velocity distribution and charge transport mechanisms. Recently, we have fabricated ambipolar OTFTs based on a diketopyrrolopyrrole-benzothiadiazole copolymer (PDPP-TBT) with a field-effect mobility of more than 0.2 cm2 V- 1 s - 1 . Velocity distributions are measured by performing specialized dynamic measurements while keeping the RC-time constant of the measurement circuit small. This yields a distribution in arrival times of charge carriers from source to drain which can be converted to velocity distributions. We will also describe dynamic transport measurements on high-k-dielectric PDPP-TBT OTFTs.

  18. Jahn-Teller assisted polaronic hole hopping as a charge transport mechanism in CuO nanograins

    NASA Astrophysics Data System (ADS)

    Younas, M.; Nadeem, M.; Idrees, M.; Akhtar, M. J.

    2012-04-01

    Impedance spectroscopy has been employed to investigate the dielectric and electric transport phenomena in sol-gel synthesized CuO nanograins. Semiconducting features of the grains and grain boundaries have been endorsed to the thermal activation of the localized charge carriers. On cooling below 303 K, a transition from Jahn-Teller polaron hopping mechanism to the Mott's variable range hopping mechanism has been observed owing to random potential fluctuations among localized sites. Activation energies for conduction and relaxation processes at grain boundaries provide strong signatures for the involvement of Jahn-Teller adiabatic small polarons as a charge transport mechanism in CuO nanograins.

  19. Numerical Simulation on the Charge Transport in Tris(8-hydroxyquinolinato)aluminum-Based Organic Light-Emitting Diode Structure

    NASA Astrophysics Data System (ADS)

    Kim, Kwangsik; Won, Taeyoung

    2013-10-01

    In this paper, we report on our theoretical study on the charge transport of a multilayer structure for organic light-emitting diodes (OLEDs). Our simulation structure comprises a hole transport layer (HTL), an emission layer (EML), and an electron transport layer (ETL) between two electrodes wherein the HTL is N,N '-bis(3-methylphenyl)-N,N '-bis(phenyl)benzidine (TPD) and the ETL includes tris(8-hydroxyquinolinato)aluminum (Alq3). We discuss the carrier transport mechanism of the Alq3-based two-layer structure and thereby propose a high-efficiency device structure. We also report our investigation on the transient response during the turn-on/off period and the carrier transport in response to the variation of the injection barrier and applied voltage. This paper also reports the effect of the insertion of the EML layer and the efficiency dependence on the difference in the internal barrier height.

  20. Ionic charge transport between blockages: Sodium cation conduction in freshly excised bulk brain tissue

    SciTech Connect

    Emin, David; Akhtari, Massoud; Ellingson, B. M.; Mathern, G. W.

    2015-08-15

    We analyze the transient-dc and frequency-dependent electrical conductivities between blocking electrodes. We extend this analysis to measurements of ions’ transport in freshly excised bulk samples of human brain tissue whose complex cellular structure produces blockages. The associated ionic charge-carrier density and diffusivity are consistent with local values for sodium cations determined non-invasively in brain tissue by MRI (NMR) and diffusion-MRI (spin-echo NMR). The characteristic separation between blockages, about 450 microns, is very much shorter than that found for sodium-doped gel proxies for brain tissue, >1 cm.

  1. Tuning optoelectronic properties and understanding charge transport in nanocrystal thin films of earth abundant semiconducting materials

    NASA Astrophysics Data System (ADS)

    Riha, Shannon C.

    2011-12-01

    With the capability of producing nearly 600 TW annually, solar power is one renewable energy source with the potential to meet a large fraction of the world's burgeoning energy demand. To make solar technology cost-competitive with carbon-based fuels, cheaper devices need to be realized. Solution-processed solar cells from nanocrystal inks of earth abundant materials satisfy this requirement. Nonetheless, a major hurdle in commercializing such devices is poor charge transport through nanocrystal thin films. The efficiency of charge transport through nanocrystal thin films is strongly dependent on the quality of the nanocrystals, as well as their optoelectronic properties. Therefore, the first part of this dissertation is focused on synthesizing high quality nanocrystals of Cu2ZnSnS4, a promising earth abundant photovoltaic absorber material. The optoelectronic properties of the nanocrystals were tuned by altering the copper to zinc ratio, as well as by introducing selenium to create Cu2ZnSn(S1-xSe x)4 solid solutions. Photoelectrochemical characterization was used to test the Cu2ZnSnS4 and Cu2ZnSn(S 1-xSex)4 nanocrystal thin films. The results identify minority carrier diffusion and recombination via the redox shuttle as the major loss mechanisms hindering efficient charge transport through the nanocrystal thin films. One way to solve this issue is to sinter the nanocrystals together, creating large grains for efficient charge transport. Although this may be quick and effective, it can lead to the formation of structural defects, among other issues. To this end, using a different copper-based material, namely Cu2Se, and simple surface chemistry treatments, an alternative route to enhance charge transport through nanocrystals thin films is proposed.

  2. Charge carrier mobility and concentration as a function of composition in AgPO3-AgI glasses

    NASA Astrophysics Data System (ADS)

    Rodrigues, Ana Candida Martins; Nascimento, Marcio Luis Ferreira; Bragatto, Caio Barca; Souquet, Jean-Louis

    2011-12-01

    Conductivity data of the xAgI(1 - x)AgPO3 system (0 ≤ x ≤ 0.5) were collected in the liquid and glassy states. The difference in the dependence of ionic conductivity on temperature below and above their glass transition temperatures (Tg) is interpreted by a discontinuity in the charge carrier's mobility mechanisms. Charge carrier displacement occurs through an activated mechanism below Tg and through a Vogel-Fulcher-Tammann-Hesse mechanism above this temperature. Fitting conductivity data with the proposed model allows one to determine separately the enthalpies of charge carrier formation and migration. For the five investigated compositions, the enthalpy of charge carrier formation is found to decrease, with x, from 0.86 to 0.2 eV, while the migration enthalpy remains constant at ≈0.14 eV. Based on these values, the charge carrier mobility and concentration in the glassy state can then be calculated. Mobility values at room temperature (≈10-4 cm2 V-1 s-1) do not vary significantly with the AgI content and are in good agreement with those previously measured by the Hall-effect technique. The observed increase in ionic conductivity with x would thus only be due to an increase in the effective charge carrier concentration. Considering AgI as a weak electrolyte, the change in the effective charge carrier concentration is justified and is correlated to the partial free energy of silver iodide forming a regular solution with AgPO3.

  3. Real-time charge carrier motion in P3HT studied with Kelvin Probe Microscopy

    NASA Astrophysics Data System (ADS)

    Castaneda, Chloe; Zaidi, Alyina; Moscatello, Jason; Aidala, Katherine

    We have developed a technique that uses scanning probe microscopy (SPM) to study the real-time injection and extraction of charge carriers in organic semiconductor devices. We investigate P3HT (full name) in an inverted field effect transistor geometry with gold electrodes. By positioning the SPM tip at an individual location and using Kelvin probe microscopy to record the potential over time, we can record how the charge carriers respond to changing the backgate voltage while the source and drain electrodes are grounded. We see relatively fast screening for negative backgate voltages because holes are quickly injected into the P3HT film. The screening is slower for positive gate voltages, because some of these holes are trapped and therefore less mobile. We compare P3HT transistors with different fabrication procedures that are expected to change the trap distribution: no silanization of the oxide and no annealing, silanization and no annealing, and both silanization and annealing. By incrementally stepping the gate voltage, we probe different trap depths. The recorded change in potential over time is best fit by a double exponential, suggesting two physical mechanisms involved in screening. This work is supported by NSF Grant DMR-0955348, and the Center for Heirarchical Manufacturing at the University of Massachusetts, Amherst (NSF CMMI-1025020).

  4. Electrical Conductivity of Rocks and Dominant Charge Carriers. Part 1; Thermally Activated Positive Holes

    NASA Technical Reports Server (NTRS)

    Freund, Friedemann T.; Freund, Minoru M.

    2012-01-01

    The prevailing view in the geophysics community is that the electrical conductivity structure of the Earth's continental crust over the 5-35 km depth range can best be understood by assuming the presence of intergranular fluids and/or of intragranular carbon films. Based on single crystal studies of melt-grown MgO, magma-derived sanidine and anorthosite feldspars and upper mantle olivine, we present evidence for the presence of electronic charge carriers, which derive from peroxy defects that are introduced during cooling, under non-equilibrium conditions, through a redox conversion of pairs of solute hydroxyl arising from dissolution of H2O.The peroxy defects become thermally activated in a 2-step process, leading to the release of defect electrons in the oxygen anion sublattice. Known as positive holes and symbolized by h(dot), these electronic charge carriers are highly mobile. Chemically equivalent to O(-) in a matrix of O(2-) they are highly oxidizing. Being metastable they can exist in the matrix of minerals, which crystallized in highly reduced environments. The h(dot) are highly mobile. They appear to control the electrical conductivity of crustal rocks in much of the 5-35 km depth range.

  5. Doped GaN nanowires on diamond: Structural properties and charge carrier distribution

    NASA Astrophysics Data System (ADS)

    Schuster, Fabian; Winnerl, Andrea; Weiszer, Saskia; Hetzl, Martin; Garrido, Jose A.; Stutzmann, Martin

    2015-01-01

    In this work, we present a detailed study on GaN nanowire doping, which is vital for device fabrication. The nanowires (NWs) are grown by means of molecular beam epitaxy on diamond (111) substrates. Dopant atoms are found to facilitate nucleation, thus an increasing NW density is observed for increasing dopant fluxes. While maintaining nanowire morphology, we demonstrate the incorporation of Si and Mg up to concentrations of 9 × 1020cm-3 and 1 × 1020cm-3 , respectively. The dopant concentration in the nanowire cores is determined by the thermodynamic solubility limit, whereas excess dopants are found to segregate to the nanowire surface. The strain state of the NWs is investigated by X-ray diffraction, which confirms a negligible strain compared to planar thin films. Doping-related emissions are identified in low-temperature photoluminescence spectroscopy and the temperature quenching yields ionization energies of Si donors and Mg acceptors of 17 meV and 167 meV, respectively. At room temperature, luminescence and absorption spectra are found to coincide and the sub-band gap absorption is suppressed in n-type NWs. The charge carrier distribution in doped GaN nanowires is simulated under consideration of surface states at the non-polar side facets. For doping concentrations below 1017cm-3 , the nanowires are depleted of charge carriers, whereas they become highly conductive above 1019cm-3 .

  6. Surface charge transport in Silicon (111) nanomembranes

    NASA Astrophysics Data System (ADS)

    Hu, Weiwei; Scott, Shelley; Jacobson, Rb; Savage, Donald; Lagally, Max; The Lagally Group Team

    Using thin sheets (``nanomembranes'') of atomically flat crystalline semiconductors, we are able to investigate surface electronic properties, using back-gated van der Pauw measurement in UHV. The thinness of the sheet diminishes the bulk contribution, and the back gate tunes the conductivity until the surface dominates, enabling experimental determination of surface conductance. We have previously shown that Si(001) surface states interact with the body of the membrane altering the conductivity of the system. Here, we extended our prior measurements to Si(111) in order to probe the electronic transport properties of the Si(111) 7 ×7 reconstruction. Sharp (7 ×7) LEED images attest to the cleanliness of the Si(111) surface. Preliminary results reveal a highly conductive Si(111) 7 ×7 surface with a sheet conductance Rs of order of μS/ □, for 110nm thick membrane, and Rs is a very slowly varying function of the back gate voltage. This is in strong contrast to Si(001) nanomembranes which have a minimum conductance several orders of magnitude lower, and hints to the metallic nature of the Si(111) surface. Research supported by DOE.

  7. Correlation between thermal fluctuation effects and phase coherence factor in carrier transport of single-crystal organic semiconductors

    NASA Astrophysics Data System (ADS)

    Fukami, Tatsuya; Ishii, Hiroyuki; Kobayashi, Nobuhiko; Uemura, Takafumi; Sakai, Kenichi; Okada, Yugo; Takeya, Jun; Hirose, Kenji

    2015-04-01

    We find that the phase coherence factor derived from Hall effect measurements of single-crystal thin-film field-effect transistors of pentacene, which relates the intrinsic charge transport with the phase coherence, has a strong correlation with the thermal fluctuations of transfer energies between neighboring molecules. This observation also holds true for other organic semiconductors such as tetracene, dianthrathiophene (DAT)-V, and dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT). This gives us clues for constructing flexible molecular systems with high carrier mobility.

  8. Interplay between hopping and band transport in high-mobility disordered semiconductors at large carrier concentrations: The case of the amorphous oxide InGaZnO

    NASA Astrophysics Data System (ADS)

    Fishchuk, I. I.; Kadashchuk, A.; Bhoolokam, A.; de Jamblinne de Meux, A.; Pourtois, G.; Gavrilyuk, M. M.; Köhler, A.; Bässler, H.; Heremans, P.; Genoe, J.

    2016-05-01

    We suggest an analytic theory based on the effective medium approximation (EMA) which is able to describe charge-carrier transport in a disordered semiconductor with a significant degree of degeneration realized at high carrier concentrations, especially relevant in some thin-film transistors (TFTs), when the Fermi level is very close to the conduction-band edge. The EMA model is based on special averaging of the Fermi-Dirac carrier distributions using a suitably normalized cumulative density-of-state distribution that includes both delocalized states and the localized states. The principal advantage of the present model is its ability to describe universally effective drift and Hall mobility in heterogeneous materials as a function of disorder, temperature, and carrier concentration within the same theoretical formalism. It also bridges a gap between hopping and bandlike transport in an energetically heterogeneous system. The key assumption of the model is that the charge carriers move through delocalized states and that, in addition to the tail of the localized states, the disorder can give rise to spatial energy variation of the transport-band edge being described by a Gaussian distribution. It can explain a puzzling observation of activated and carrier-concentration-dependent Hall mobility in a disordered system featuring an ideal Hall effect. The present model has been successfully applied to describe experimental results on the charge transport measured in an amorphous oxide semiconductor, In-Ga-Zn-O (a-IGZO). In particular, the model reproduces well both the conventional Meyer-Neldel (MN) compensation behavior for the charge-carrier mobility and inverse-MN effect for the conductivity observed in the same a-IGZO TFT. The model was further supported by ab initio calculations revealing that the amorphization of IGZO gives rise to variation of the conduction-band edge rather than to the creation of localized states. The obtained changes agree with the one we

  9. Hyperfine-induced spin relaxation of a diffusively moving carrier in low dimensions: Implications for spin transport in organic semiconductors

    DOE PAGES

    Mkhitaryan, V. V.; Dobrovitski, V. V.

    2015-08-24

    The hyperfine coupling between the spin of a charge carrier and the nuclear spin bath is a predominant channel for the carrier spin relaxation in many organic semiconductors. We theoretically investigate the hyperfine-induced spin relaxation of a carrier performing a random walk on a d-dimensional regular lattice, in a transport regime typical for organic semiconductors. We show that in d=1 and 2, the time dependence of the space-integrated spin polarization P(t) is dominated by a superexponential decay, crossing over to a stretched-exponential tail at long times. The faster decay is attributed to multiple self-intersections (returns) of the random-walk trajectories, whichmore » occur more often in lower dimensions. We also show, analytically and numerically, that the returns lead to sensitivity of P(t) to external electric and magnetic fields, and this sensitivity strongly depends on dimensionality of the system (d=1 versus d=3). We investigate in detail the coordinate dependence of the time-integrated spin polarization σ(r), which can be probed in the spin-transport experiments with spin-polarized electrodes. We also demonstrate that, while σ(r) is essentially exponential, the effect of multiple self-intersections can be identified in transport measurements from the strong dependence of the spin-decay length on the external magnetic and electric fields.« less

  10. Hyperfine-induced spin relaxation of a diffusively moving carrier in low dimensions: Implications for spin transport in organic semiconductors

    SciTech Connect

    Mkhitaryan, V. V.; Dobrovitski, V. V.

    2015-08-24

    The hyperfine coupling between the spin of a charge carrier and the nuclear spin bath is a predominant channel for the carrier spin relaxation in many organic semiconductors. We theoretically investigate the hyperfine-induced spin relaxation of a carrier performing a random walk on a d-dimensional regular lattice, in a transport regime typical for organic semiconductors. We show that in d=1 and 2, the time dependence of the space-integrated spin polarization P(t) is dominated by a superexponential decay, crossing over to a stretched-exponential tail at long times. The faster decay is attributed to multiple self-intersections (returns) of the random-walk trajectories, which occur more often in lower dimensions. We also show, analytically and numerically, that the returns lead to sensitivity of P(t) to external electric and magnetic fields, and this sensitivity strongly depends on dimensionality of the system (d=1 versus d=3). We investigate in detail the coordinate dependence of the time-integrated spin polarization σ(r), which can be probed in the spin-transport experiments with spin-polarized electrodes. We also demonstrate that, while σ(r) is essentially exponential, the effect of multiple self-intersections can be identified in transport measurements from the strong dependence of the spin-decay length on the external magnetic and electric fields.

  11. [Hopping and superexchange mechanisms of charge transport to DNA].

    PubMed

    Lakhno, V D; Sultanov, V B

    2003-01-01

    A theory for charge transport in nucleobase sequences was constructed in which the hole migration proceeds via hopping between guanines. Each hop over the adenine-thymine (A-T) bridge connecting neighboring guanines occurs by means of the superexchange mechanism. The experimental data and theoretical results for various types of nucleobase sequences are compared.

  12. Proton intercalated two-dimensional WO3 nano-flakes with enhanced charge-carrier mobility at room temperature

    NASA Astrophysics Data System (ADS)

    Zhuiykov, Serge; Kats, Eugene; Carey, Benjamin; Balendhran, Sivacarendran

    2014-11-01

    Quasi two-dimensional (Q2D) semiconducting metal oxides with enhanced charge carrier mobility hold tremendous promise for nano-electronics, photonics, catalysis, nano-sensors and electrochromic applications. In addition to graphene and metal dichalcogenides MX2 (M = Mo, W; X = S, Se, Te), 2D sub-stoichiometric WO3-x is gaining importance as a promising semiconductor material for field-effect-transistor (FET) based devices. A combination of high permittivity, suppression of the Coulomb effects, and their stratified structure enhances the carrier mobility in such a material. Additionally, the sub-stoichiometry of this semiconductor oxide allows the reduction of the bandgap and increase of the free charge carriers at the same time. Here, we report for the first time H+ intercalated WO3 FETs, made of Q2D nano-flakes, with enhanced charge-carrier mobility exceeding 319 cm2 V-1 s-1 comparable with the charge-carrier mobility of Q2D dichalcogenides MoS2 and WSe2. Analyses indicate that the enhanced electrical properties of the sub-stoichiometric WO3-x depend on the oxygen vacancies in the intercalated nano-flakes. These findings confirmed that Q2D sub-stoichiometric WO3-x is a promising material for various functional FET devices.Quasi two-dimensional (Q2D) semiconducting metal oxides with enhanced charge carrier mobility hold tremendous promise for nano-electronics, photonics, catalysis, nano-sensors and electrochromic applications. In addition to graphene and metal dichalcogenides MX2 (M = Mo, W; X = S, Se, Te), 2D sub-stoichiometric WO3-x is gaining importance as a promising semiconductor material for field-effect-transistor (FET) based devices. A combination of high permittivity, suppression of the Coulomb effects, and their stratified structure enhances the carrier mobility in such a material. Additionally, the sub-stoichiometry of this semiconductor oxide allows the reduction of the bandgap and increase of the free charge carriers at the same time. Here, we report

  13. Physical constraints on charge transport through bacterial nanowires

    PubMed Central

    Polizzi, Nicholas F.; Skourtis, Spiros S.

    2012-01-01

    Extracellular appendages of the dissimilatory metal-reducing bacterium Shewanella oneidensis MR-1 were recently shown to sustain currents of 1010 electrons per second over distances of 0.5 microns [El-Naggar et al., Proc. Natl. Acad. Sci. U. S. A., 2010, 107, 18127]. However, the identity of the charge localizing sites and their organization along the “nanowire” remain unknown. We use theory to predict redox cofactor separation distances that would permit charge flow at rates of 1010 electrons per second over 0.5 microns for voltage biases of ≤1V, using a steady-state analysis governed by a non-adiabatic electron transport mechanism. We find the observed currents necessitate a multi-step hopping transport mechanism, with charge localizing sites separated by less than 1 nm and reorganization energies that rival the lowest known in biology. PMID:22470966

  14. Coherent and incoherent charge transport in linear triple quantum dots.

    PubMed

    Contreras-Pulido, L Debora; Bruderer, Martin

    2017-03-15

    One of the fundamental questions in quantum transport is how charge transfer through complex nanostructures is influenced by quantum coherence. We address this issue for linear triple quantum dots by comparing a Lindblad density matrix description with a Pauli rate equation approach and analyze the corresponding zero-frequency counting statistics of charge transfer. The impact of decaying coherences of the density matrix due to dephasing is also studied. Our findings reveal that the sensitivity to coherence shown by shot noise and skewness, in particular in the limit of large coupling to the drain reservoir, can be used to unambiguously evidence coherent processes involved in charge transport across triple quantum dots. Our analytical results are obtained by using the characteristic polynomial approach to full counting statistics.

  15. Physical constraints on charge transport through bacterial nanowires

    SciTech Connect

    Polizzi, Nicholas F.; Skourtis, Spiros S.; Beratan, David N.

    2012-01-01

    Extracellular appendages of the dissimilatory metal-reducing bacterium Shewanella oneidensis MR-1 were recently shown to sustain currents of 10{sup 10} electrons per second over distances of 0.5 microns [El-Naggar et al., Proc. Natl. Acad. Sci. U. S. A., 2010, 107, 18127]. However, the identity of the charge localizing sites and their organization along the “nanowire” remain unknown. We use theory to predict redox cofactor separation distances that would permit charge flow at rates of 10{sup 10} electrons per second over 0.5 microns for voltage biases of ≤1V, using a steady-state analysis governed by a non-adiabatic electron transport mechanism. We find the observed currents necessitate a multi-step hopping transport mechanism, with charge localizing sites separated by less than 1 nm and reorganization energies that rival the lowest known in biology.

  16. Physical constraints on charge transport through bacterial nanowires

    SciTech Connect

    Polizzi, Nicholas F.; Skourtis, Spiros S.; Beratan, David N.

    2011-10-17

    Extracellular appendages of the dissimilatory metal-reducing bacterium Shewanella oneidensis MR-1 were recently shown to sustain currents of 10¹⁰ electrons per second over distances of 0.5 microns [El-Naggar et al., Proc. Natl. Acad. Sci. U. S. A., 2010, 107, 18127]. However, the identity of the charge localizing sites and their organization along the “nanowire” remain unknown. We use theory to predict redox cofactor separation distances that would permit charge flow at rates of 10¹⁰ electrons per second over 0.5 microns for voltage biases of ≤1V, using a steady-state analysis governed by a non-adiabatic electron transport mechanism. We find the observed currents necessitate a multi-step hopping transport mechanism, with charge localizing sites separated by less than 1 nm and reorganization energies that rival the lowest known in biology.

  17. A multi-agent quantum Monte Carlo model for charge transport: Application to organic field-effect transistors

    SciTech Connect

    Bauer, Thilo; Jäger, Christof M.; Jordan, Meredith J. T.; Clark, Timothy

    2015-07-28

    We have developed a multi-agent quantum Monte Carlo model to describe the spatial dynamics of multiple majority charge carriers during conduction of electric current in the channel of organic field-effect transistors. The charge carriers are treated by a neglect of diatomic differential overlap Hamiltonian using a lattice of hydrogen-like basis functions. The local ionization energy and local electron affinity defined previously map the bulk structure of the transistor channel to external potentials for the simulations of electron- and hole-conduction, respectively. The model is designed without a specific charge-transport mechanism like hopping- or band-transport in mind and does not arbitrarily localize charge. An electrode model allows dynamic injection and depletion of charge carriers according to source-drain voltage. The field-effect is modeled by using the source-gate voltage in a Metropolis-like acceptance criterion. Although the current cannot be calculated because the simulations have no time axis, using the number of Monte Carlo moves as pseudo-time gives results that resemble experimental I/V curves.

  18. Charge pariticle transport in the non-isotropic turbulences

    NASA Astrophysics Data System (ADS)

    Sun, P.; Jokipii, J. R.

    2015-12-01

    The scattering and diffusion of energetic charged particles is not only important for understanding phenomena such as diffusive shock acceleration but it also is a natural probe of the statistical characteristics of magnetohydrodynamic (MHD) turbulence. Although Parker's transport equation (Parker 1965) allows us to describe the propagation of charged particles, the transport coefficients needed in the equation must be determined. Using Quasi-Linear Theory (QLT, e.g. Jokipii (1966)), one finds that coefficients can be related to the correlation function or power spectrum of homogeneous magnetic turbulence. However, different turbulence models will generally have a different influence on particle's scattering and diffusion. Among those models developed in MHD Turbulence, such as isotropic, Slab plus 2D (Tu & Marsch 1993; Gray et al 1996; Bieber et al 1996), etc. Here, using test-particle orbit simulations to calculate the transport coefficients, we study particle transport in synthesized asymmetric turbulence using the form first proposed by Goldreich & Sridhar (1995). We developed and introduce a systematic method to synthesize scale-dependent non-isotropic magnetic turbulences. We also developed and introduce a method to synthesize the 3d turbulent magnetic field from the observed solar wind time series dataset. We present the comparison of their effects on charge particle transport with previous theories and models.

  19. Inorganic/organic hybrid solar cells: optimal carrier transport in vertically aligned silicon nanowire arrays

    NASA Astrophysics Data System (ADS)

    Sato, Keisuke; Dutta, Mrinal; Fukata, Naoki

    2014-05-01

    Inorganic/organic hybrid radial heterojunction solar cells that combine vertically-aligned n-type silicon nanowires (SiNWs) with poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) have great potential for replacing commercial Si solar cells. The chief advantage of such solar cells is that they exhibit higher absorbance for a given thickness than commercial Si solar cells, due to incident light-trapping within the NW arrays, thus enabling lower-cost solar cell production. We report herein on the effects of NW length, annealing and surface electrode on the device performance of SiNW/PEDOT:PSS hybrid radial heterojunction solar cells. The power conversion efficiency (PCE) of the obtained SiNW/PEDOT:PSS hybrid solar cells can be optimized by tuning the thickness of the surface electrode, and the etching conditions during NW formation and post-annealing. The PCE of 9.3% is obtained by forming efficient transport pathways for photogenerated charge carriers to electrodes. Our approach is a significant contribution to design of high-performance and low-cost inorganic/organic hybrid heterojunction solar cells.Inorganic/organic hybrid radial heterojunction solar cells that combine vertically-aligned n-type silicon nanowires (SiNWs) with poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) have great potential for replacing commercial Si solar cells. The chief advantage of such solar cells is that they exhibit higher absorbance for a given thickness than commercial Si solar cells, due to incident light-trapping within the NW arrays, thus enabling lower-cost solar cell production. We report herein on the effects of NW length, annealing and surface electrode on the device performance of SiNW/PEDOT:PSS hybrid radial heterojunction solar cells. The power conversion efficiency (PCE) of the obtained SiNW/PEDOT:PSS hybrid solar cells can be optimized by tuning the thickness of the surface electrode, and the etching conditions during NW formation and

  20. 49 CFR 1572.203 - Transportation of explosives from Canada to the United States via railroad carrier.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... United States via railroad carrier. 1572.203 Section 1572.203 Transportation Other Regulations Relating... Transportation of explosives from Canada to the United States via railroad carrier. (a) Applicability. This section applies to railroad carriers that carry explosives from Canada to the United States, using a...

  1. Charge transport in thin layer Na x CoO2 (x ˜ 0.63) studied by terahertz spectroscopy

    NASA Astrophysics Data System (ADS)

    Němec, H.; Knížek, K.; Jirák, Z.; Hejtmánek, J.; Soroka, M.; Buršík, J.

    2016-09-01

    Charge transport in Na0.63CoO2 thin film deposited by a spin-coating method was investigated experimentally by time-domain terahertz spectroscopy and theoretically using Monte Carlo calculations of charge response in nano-structured materials. The dominating type of transport mechanism over the entire investigated range of temperatures (20-300 K) is a metallic-like conductivity of charges partly confined in constituting nano-sized grains. Due to the granular character of our thin film, the scattering time at low temperatures is limited by scattering on grain boundaries and the conductivity is strongly suppressed due to capture of a major fraction of charge carriers in deep traps. Nevertheless, our experimental setup and the applied model allowed us to distinguish the parameters related to the grain interior from those influenced by grain boundaries, and to conclude that the metallic type of conductivity is the intrinsic property relevant to single crystal materials.

  2. Molecular reorganization in organic field-effect transistors and its effect on two-dimensional charge transport pathways.

    PubMed

    Liscio, Fabiola; Albonetti, Cristiano; Broch, Katharina; Shehu, Arian; Quiroga, Santiago David; Ferlauto, Laura; Frank, Christian; Kowarik, Stefan; Nervo, Roberto; Gerlach, Alexander; Milita, Silvia; Schreiber, Frank; Biscarini, Fabio

    2013-02-26

    Charge transport in organic thin film transistors takes place in the first few molecular layers in contact with the gate dielectric. Here we demonstrate that the charge transport pathways in these devices are extremely sensitive to the orientational defects of the first monolayers, which arise from specific growth conditions. Although these defects partially heal during the growth, they cause depletion of charge carriers in the first monolayer, and drive the current to flow in the monolayers above the first one. Moreover, the residual defects induce lower crystalline order and charge mobility. These results, which are not intuitively explained by electrostatics arguments, have been obtained by combining in situ real time structural and electrical characterization together with ex situ AFM measurements, on thin films of a relevant n-type organic semiconductor, N,N'-bis(n-octyl)-dicyanoperylene-3,4:9,10-bis dicarboximide grown by sublimation in a quasi-layer-by-layer mode at different substrate temperatures.

  3. Charge transport measurements of vertically aligned carbon nanofibers

    NASA Astrophysics Data System (ADS)

    Zhang, Lan

    2005-07-01

    Vertically aligned carbon nanofibers (VACNFs) have found a variety of electronic applications. To further realize these applications, a good understanding of the charge transport properties is essential. In this work, charge transport properties have been systematically measured for three types of VACNF forests with Ni as catalyst, namely VACNFs grown by direct current PECVD, and inductively coupled PECVD at both normal pressure and low pressure. The structure and composition of these nanofibers have also been investigated in detail prior to the charge transport measurements. Four-probe I-V measurements on individual nanofibers have been enabled by the fabrication of multiple metal ohmic contacts on individual fibers that exhibited resistance of only a few kO. An O2 plasma reactive ion etch method has been used to achieve ohmic contacts between the nanofibers and Ti/Au, Ag/Au, Cd/Au, and Cr/Au electrodes. Direct current VACNFs exhibit linear I-V behavior at room temperature, with a resistivity of approximately 4.2 x 10-3 O·cm. Our measurements are consistent with a dominant transport mechanism of electrons traveling through intergraphitic planes in the dc VACNFs. The resistivity of these fibers is almost independent of temperature, and the contact resistance decreases as temperature increases. Further studies reveal that the 10--15 nm thick graphitic outer layer dominates the charge transport properties of do VACNFs. This is demonstrated by comparison of charge transport properties of as-grown VACNFs and VACNFs with the outer layer partially removed by oxygen plasma reactive ion etch. The linear I-V behavior of the fibers does not vary as this outer layer becomes thinner, but displays a drastic shift to a rectifying behavior when this layer is completely stripped away from some regions of the nanofiber. This shift may be related with the compositional differences in the outer layer and the inner core of the nanofibers. Two-probe charge transport measurements on

  4. Charge transport and recombination in P3HT:PbS solar cells

    SciTech Connect

    Firdaus, Yuliar; Khetubol, Adis; Van der Auweraer, Mark; Vandenplas, Erwin; Cheyns, David; Gehlhaar, Robert

    2015-03-07

    The charge carrier transport in thin film hybrid solar cells is analyzed and correlated with device performance and the mechanisms responsible for recombination loss. The hybrid bulk heterojunction consisted of a blend of poly(3-hexylthiophene) (P3HT) and small size (2.4 nm) PbS quantum dots (QDs). The charge transport in the P3HT:PbS blends was determined by measuring the space-charge limited current in hole-only and electron-only devices. When the loading of PbS QDs exceeds the percolation threshold, a significant increase of the electron mobility is observed in the blend with PbS QDs. The hole mobility, on the other hand, only slightly decreased upon increasing the loading of PbS QDs. We also showed that the photocurrent is limited by the low shunt resistance rather than by space-charge effects. The significant reduction of the fill factor at high light intensity suggests that under these conditions the non-geminate recombination dominates. However, at open-circuit conditions, the trap-assisted recombination dominates over non-geminate recombination.

  5. Different electronic and charge-transport properties of four organic semiconductors Tetraazaperopyrenes derivatives

    NASA Astrophysics Data System (ADS)

    Shi, Yarui; Wei, Huiling; Liu, Yufang

    2015-03-01

    Tetraazaperopyrenes (TAPPs) derivatives are high-performance n-type organic semiconductor material families with the remarkable long-term stabilities. The charge carrier mobilities in TAPPs derivatives crystals were calculated by the density functional theory (DFT) method combined with the Marcus-Hush electron-transfer theory. The existence of considerable C-H…F-C bonding defines the conformation of the molecular structure and contributes to its stability. We illustrated how it is possible to control the electronic and charge-transport parameters of TAPPs derivatives as a function of the positions, a type of the substituents. It is found that the core substitution of TAPPs has a drastic influence on the charge-transport mobilities. The maximum electron mobility value of the core-brominated 2,9-bis (perfluoroalkyl)-substituted TAPPs is 0.521 cm2 V-1 s-1, which appear in the orientation angle 95° and 275°. The results demonstrate that the TAPPs with bromine substituents in ortho positions exhibit the best charge-transfer efficiency among the four different TAPP derivatives.

  6. Pore network model of electrokinetic transport through charged porous media

    NASA Astrophysics Data System (ADS)

    Obliger, Amaël; Jardat, Marie; Coelho, Daniel; Bekri, Samir; Rotenberg, Benjamin

    2014-04-01

    We introduce a method for the numerical determination of the steady-state response of complex charged porous media to pressure, salt concentration, and electric potential gradients. The macroscopic fluxes of solvent, salt, and charge are computed within the framework of the Pore Network Model (PNM), which describes the pore structure of the samples as networks of pores connected to each other by channels. The PNM approach is used to capture the couplings between solvent and ionic flows which arise from the charge of the solid surfaces. For the microscopic transport coefficients on the channel scale, we take a simple analytical form obtained previously by solving the Poisson-Nernst-Planck and Stokes equations in a cylindrical channel. These transport coefficients are upscaled for a given network by imposing conservation laws for each pores, in the presence of macroscopic gradients across the sample. The complex pore structure of the material is captured by the distribution of channel diameters. We investigate the combined effects of this complex geometry, the surface charge, and the salt concentration on the macroscopic transport coefficients. The upscaled numerical model preserves the Onsager relations between the latter, as expected. The calculated macroscopic coefficients behave qualitatively as their microscopic counterparts, except for the permeability and the electro-osmotic coupling coefficient when the electrokinetic effects are strong. Quantitatively, the electrokinetic couplings increase the difference between the macroscopic coefficients and the corresponding ones for a single channel of average diameter.

  7. Ultrafast Spectroscopic Noninvasive Probe of Vertical Carrier Transport in Heterostructure Devices

    DTIC Science & Technology

    2016-03-01

    localization of holes and rapid electron tunneling.5 However, direct transport properties were Approved for public release; distribution is...electric fields, radiative and nonradiative recombination rates, carrier drift and diffusion times, field screening, and electron and hole velocities...to investigate instantaneous polarization of electron- hole pairs, ballistic transport, electron velocity overshoot, and steady-state drift in GaAs

  8. 9 CFR 91.18 - Cleaning and disinfection of transport carriers for export.

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 9 Animals and Animal Products 1 2012-01-01 2012-01-01 false Cleaning and disinfection of transport....18 Cleaning and disinfection of transport carriers for export. All fittings, utensils and equipment... prepared solution of: (a) Sodium carbonate (4 percent) in the proportion of 1 pound to 3 gallons of...

  9. 9 CFR 91.18 - Cleaning and disinfection of transport carriers for export.

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 9 Animals and Animal Products 1 2013-01-01 2013-01-01 false Cleaning and disinfection of transport....18 Cleaning and disinfection of transport carriers for export. All fittings, utensils and equipment... prepared solution of: (a) Sodium carbonate (4 percent) in the proportion of 1 pound to 3 gallons of...

  10. 77 FR 38747 - Reports by Air Carriers on Incidents Involving Animals During Air Transport

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-06-29

    ... all cats and dogs transported by the carrier, regardless of whether the cat or dog is transported as a... required to report all incidents involving the loss, injury, or death of cats and dogs that occur while they are traveling in an airline's care, custody, or control, regardless of whether the cat or dog...

  11. Charge transport and ac response under light illumination in gate-modulated DNA molecular junctions.

    PubMed

    Zhang, Yan; Zhu, Wen-Huan; Ding, Guo-Hui; Dong, Bing; Wang, Xue-Feng

    2015-05-22

    Using a two-strand tight-binding model and within nonequilibrium Green's function approach, we study charge transport through DNA sequences (GC)NGC and (GC)1(TA)NTA (GC)3 sandwiched between two Pt electrodes. We show that at low temperature DNA sequence (GC)NGC exhibits coherent charge carrier transport at very small bias, since the highest occupied molecular orbital in the GC base pair can be aligned with the Fermi energy of the metallic electrodes by a gate voltage. A weak distance dependent conductance is found in DNA sequence (GC)1(TA)NTA (GC)3 with large NTA. Different from the mechanism of thermally induced hopping of charges proposed by the previous experiments, we find that this phenomenon is dominated by quantum tunnelling through discrete quantum well states in the TA base pairs. In addition, ac response of this DNA junction under light illumination is also investigated. The suppression of ac conductances of the left and right lead of DNA sequences at some particular frequencies is attributed to the excitation of electrons in the DNA to the lead Fermi surface by ac potential, or the excitation of electrons in deep DNA energy levels to partially occupied energy levels in the transport window. Therefore, measuring ac response of DNA junctions can reveal a wealth of information about the intrinsic dynamics of DNA molecules.

  12. Polarized recombination of acoustically transported carriers in GaAs nanowires.

    PubMed

    Möller, Michael; Hernández-Mínguez, Alberto; Breuer, Steffen; Pfüller, Carsten; Brandt, Oliver; de Lima, Mauricio M; Cantarero, Andrés; Geelhaar, Lutz; Riechert, Henning; Santos, Paulo V

    2012-05-14

    : The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited electrons and holes in GaAs nanowires deposited on a SAW delay line on a LiNbO3 crystal. The carriers generated in the nanowire by a focused light spot are acoustically transferred to a second location where they recombine. We show that the recombination of the transported carriers occurs in a zinc blende section on top of the predominant wurtzite nanowire. This allows contactless control of the linear polarized emission by SAWs which is governed by the crystal structure. Additional polarization-resolved photoluminescence measurements were performed to investigate spin conservation during transport.

  13. Anomalous charge transport in RB12 (R = Ho, Er, Tm, Lu)

    NASA Astrophysics Data System (ADS)

    Sluchanko, N.; Bogomolov, L.; Glushkov, V.; Demishev, S.; Ignatov, M.; Khayrullin, Eu.; Samarin, N.; Sluchanko, D.; Levchenko, A.; Shitsevalova, N.; Flachbart, K.

    High precision measurements of Hall RH(T) and Seebeck S(T) coefficients have been carried out for the first time on single crystals of rare earth dodecaborides RB12 (R D Ho, Er, Tm, Lu) at temperatures 1.8-300 K. Low temperature anomalies detected on the temperature dependencies of RH(T) and S(T) are associated with antiferromagnetic phase transitions in HoB12, ErB12 and TmB12 compounds. The observed discrepancy between the change of charge carriers' mobility and de-Gennes factor (g - 1)2 J(J + 1) (J - angular momentum of the 4f shell) in the set of HoB12-TmB12 allows us to conclude about the appreciable influence of spin fluctuations on the charge transport in these compounds with B12 atomic clusters.

  14. Unity quantum yield of photogenerated charges and band-like transport in quantum-dot solids.

    PubMed

    Talgorn, Elise; Gao, Yunan; Aerts, Michiel; Kunneman, Lucas T; Schins, Juleon M; Savenije, T J; van Huis, Marijn A; van der Zant, Herre S J; Houtepen, Arjan J; Siebbeles, Laurens D A

    2011-09-25

    Solid films of colloidal quantum dots show promise in the manufacture of photodetectors and solar cells. These devices require high yields of photogenerated charges and high carrier mobilities, which are difficult to achieve in quantum-dot films owing to a strong electron-hole interaction and quantum confinement. Here, we show that the quantum yield of photogenerated charges in strongly coupled PbSe quantum-dot films is unity over a large temperature range. At high photoexcitation density, a transition takes place from hopping between localized states to band-like transport. These strongly coupled quantum-dot films have electrical properties that approach those of crystalline bulk semiconductors, while retaining the size tunability and cheap processing properties of colloidal quantum dots.

  15. Quantum states of charge carriers and longitudinal conductivity in double periodic n-type semiconductor lattice structures in electric field

    SciTech Connect

    Perov, A. A. Penyagin, I. V.

    2015-07-15

    Quantum states of charge carriers in double periodic semiconductor superlattices of n-type quantum dots with Rashba spin–orbit coupling in an electron gas have been calculated in the one-electron approximation in the presence of mutually perpendicular electric and magnetic fields. For these structures in weak constant electric field, the solution to the quasi-classical kinetic Boltzmann equation shows that the states of carriers in magnetic Landau minibands with negative differential conductivity are possible.

  16. Imaging the Long Transport Lengths of Photo-generated Carriers in Oriented Perovskite Films

    NASA Astrophysics Data System (ADS)

    Liu, Shuhao; Wang, Lili; Lin, Wei-Chun; Sucharitakul, Sukrit; Burda, Clemens; Gao, Xuan P. A.

    2016-12-01

    Organometal halide perovskite has emerged as a promising material for solar cells and optoelectronics. Although the long diffusion length of photo-generated carriers is believed to be a critical factor responsible for the material's high efficiency in solar cells, a direct study of carrier transport over long distances in organometal halide perovskites is still lacking. We fabricated highly oriented crystalline CH$_3$NH$_3$PbI$_3$ (MAPbI$_3$) thin film lateral transport devices with long channel length (~ 120 $\\mu$m). By performing spatially scanned photocurrent imaging measurements with local illumination, we directly show that the perovskite films prepared here have very long transport lengths for photo-generated carriers, with a minority carrier (electron) diffusion length on the order of 10 $\\mu$m. Our approach of applying scanning photocurrent microscopy to organometal halide perovskites may be further used to elucidate the carrier transport processes and vastly different carrier diffusion lengths (~ 100 nm to 100 $\\mu$m) in different types of organometal halide perovskites.

  17. Anomalous Magnetic Field Dependence of Charge Carrier Density in Ferromagnetic Semiconductors

    NASA Astrophysics Data System (ADS)

    Kuivalainen, P.; Sinkkonen, J.; Stubb, T.

    1980-01-01

    This paper reports calculations of temperature and magnetic field dependent thermal and optical activation energies of a shallow donor state and the energy of the conduction band edge in a ferromagnetic semiconductor. The formation of the bound magnetic polaron (BMP), i.e., a magnetically polarized cluster associated with the donor electron, is taken into account. The solution of a set of coupled equations for the energy of a donor electron and for the local non-uniform magnetization around the donor center indicates that the activation energies have their maxima near the Curie temperature and decrease with the application of a magnetic field. This decrease leads to a strong magnetic field dependence of the charge carrier density nc explains well the giant negative magnetoresistance of EuSe observed experimentally at low temperatures.

  18. Charge carrier dynamics in nanocrystalline Dy substituted ceria based oxygen ion conductors

    NASA Astrophysics Data System (ADS)

    Anirban, Sk.; Dutta, A.

    2016-05-01

    Nano-crystalline Ce1-xDyxO2-δ (x = 0.1-0.5) materials were prepared using the low temperature citrate auto-ignition method. The Rietveld analysis of the XRD data confirmed the single phase cubic fluorite structure. The particle sizes of the sintered samples are in nano range and lattice parameter increases with Dy concentration. Polydispersed and agglomerated particles are observed by SEM. The EDAX spectra show good stoichiometry of the different atoms in the samples. The conductivity is found to have both grain and grain boundary contribution and shows highest value at x= 0.2. The frequency dependence of dielectric permittivity has been analyzed using Havrilliak-Negami formalism. The variation in different electrical properties has been explained by formation defect associates and their interaction with charge carriers.

  19. Charge transport in nitro substituted oligo(phenylene-ethynylene) molecules

    NASA Astrophysics Data System (ADS)

    Cabassi, Marco Alberto

    2007-12-01

    This thesis presents research aimed at tackling two issues in the field of molecular electronics. The first issue is the large range of molecular conductance values reported by various research groups for identical molecules. This is addressed by studying the same molecule in dissimilar environments. The second issue is experimental uncertainty---whether the observed effects are inherent to the molecule or due to external causes. This is addressed by performing in-situ spectroscopy of the molecule as part of its electrical characterization. Oligo(phenylene-ethynylene)s are a well studied class of molecules in the field of molecular electronics, and this work focuses on charge transport through nitro substituted oligo(phenylene-ethynylene) molecules. The electrical characterization of these molecules was performed utilizing two testbeds. An electromigrated break-junction testbed was used to probe individual molecules, while a nanowire molecular junction testbed was used to probe self-assembled monolayers of the molecule. Experiments performed on individual molecules revealed a temperature dependent transition in the dominant charge transport mechanism. Above 50K, hopping is the dominant charge transport mechanism, while below 50K direct tunneling is the dominant charge transport mechanism. Experiments performed on self-assembled monolayers did not reveal any temperature dependent transitions. The dominant charge transport mechanism appears to be direct tunneling throughout the temperature range investigated. The results also indicate that molecules embedded in a self-assembled monolayer have significantly lower conductance than individual molecules. This is primarily due to a second charge transport mechanism (hopping) that opens up above 50K that is available only to individual molecules, and secondarily due to better potential screening properties of the self-assembled monolayers. Inelastic electron tunneling spectra obtained for the molecules in a self

  20. Time-resolved HAXPES using a microfocused XFEL beam: From vacuum space-charge effects to intrinsic charge-carrier recombination dynamics

    PubMed Central

    Oloff, Lars-Philip; Chainani, Ashish; Matsunami, Masaharu; Takahashi, Kazutoshi; Togashi, Tadashi; Osawa, Hitoshi; Hanff, Kerstin; Quer, Arndt; Matsushita, Ryuki; Shiraishi, Ryutaro; Nagashima, Maki; Kimura, Ayato; Matsuishi, Kotaro; Yabashi, Makina; Tanaka, Yoshihito; Rossi, Giorgio; Ishikawa, Tetsuya; Rossnagel, Kai; Oura, Masaki

    2016-01-01

    Time-resolved hard X-ray photoelectron spectroscopy (trHAXPES) using microfocused X-ray free-electron laser (XFEL, hν = 8 keV) pulses as a probe and infrared laser pulses (hν = 1.55 eV) as a pump is employed to determine intrinsic charge-carrier recombination dynamics in La:SrTiO3. By means of a combination of experiments and numerical N-body simulations, we first develop a simple approach to characterize and decrease XFEL-induced vacuum space-charge effects, which otherwise pose a serious limitation to spectroscopy experiments. We then show that, using an analytical mean-field model, vacuum space-charge effects can be counteracted by pump laser-induced photoholes at high excitation densities. This provides us a method to separate vacuum space-charge effects from the intrinsic charge-carrier recombination dynamics in the time domain. Our trHAXPES results thus open a route to studies of intrinsic charge-carrier dynamics on picosecond time scales with lateral spatial resolution on the micrometer scale. PMID:27731408

  1. Doped GaN nanowires on diamond: Structural properties and charge carrier distribution

    SciTech Connect

    Schuster, Fabian Winnerl, Andrea; Weiszer, Saskia; Hetzl, Martin; Garrido, Jose A.; Stutzmann, Martin

    2015-01-28

    In this work, we present a detailed study on GaN nanowire doping, which is vital for device fabrication. The nanowires (NWs) are grown by means of molecular beam epitaxy on diamond (111) substrates. Dopant atoms are found to facilitate nucleation, thus an increasing NW density is observed for increasing dopant fluxes. While maintaining nanowire morphology, we demonstrate the incorporation of Si and Mg up to concentrations of 9× 10{sup 20}cm{sup −3} and 1 × 10{sup 20}cm{sup −3}, respectively. The dopant concentration in the nanowire cores is determined by the thermodynamic solubility limit, whereas excess dopants are found to segregate to the nanowire surface. The strain state of the NWs is investigated by X-ray diffraction, which confirms a negligible strain compared to planar thin films. Doping-related emissions are identified in low-temperature photoluminescence spectroscopy and the temperature quenching yields ionization energies of Si donors and Mg acceptors of 17 meV and 167 meV, respectively. At room temperature, luminescence and absorption spectra are found to coincide and the sub-band gap absorption is suppressed in n-type NWs. The charge carrier distribution in doped GaN nanowires is simulated under consideration of surface states at the non-polar side facets. For doping concentrations below 10{sup 17}cm{sup −3}, the nanowires are depleted of charge carriers, whereas they become highly conductive above 10{sup 19}cm{sup −3}.

  2. Quantifying charge carrier concentration in ZnO thin films by Scanning Kelvin Probe Microscopy

    PubMed Central

    Maragliano, C.; Lilliu, S.; Dahlem, M. S.; Chiesa, M.; Souier, T.; Stefancich, M.

    2014-01-01

    In the last years there has been a renewed interest for zinc oxide semiconductor, mainly triggered by its prospects in optoelectronic applications. In particular, zinc oxide thin films are being widely used for photovoltaic applications, in which the determination of the electrical conductivity is of great importance. Being an intrinsically doped material, the quantification of its doping concentration has always been challenging. Here we show how to probe the charge carrier density of zinc oxide thin films by Scanning Kelvin Probe Microscopy, a technique that allows measuring the contact potential difference between the tip and the sample surface with high spatial resolution. A simple electronic energy model is used for correlating the contact potential difference with the doping concentration in the material. Limitations of this technique are discussed in details and some experimental solutions are proposed. Two-dimensional doping concentration images acquired on radio frequency-sputtered intrinsic zinc oxide thin films with different thickness and deposited under different conditions are reported. We show that results inferred with this technique are in accordance with carrier concentration expected for zinc oxide thin films deposited under different conditions and obtained from resistivity and mobility measurements. PMID:24569599

  3. Cycle of charge carrier states with formation and extinction of a floating gate in an ambipolar tetracyanoquaterthienoquinoid-based field-effect transistor

    NASA Astrophysics Data System (ADS)

    Itoh, Takuro; Toyota, Taro; Higuchi, Hiroyuki; Matsushita, Michio M.; Suzuki, Kentaro; Sugawara, Tadashi

    2017-03-01

    A tetracyanoquaterthienoquinoid (TCT4Q)-based field effect transistor is characterized by the ambipolar transfer characteristics and the facile shift of the threshold voltage induced by the bias stress. The trapping and detrapping kinetics of charge carriers was investigated in detail by the temperature dependence of the decay of source-drain current (ISD). We found a repeatable formation of a molecular floating gate is derived from a 'charge carrier-and-gate' cycle comprising four stages, trapping of mobile carriers, formation of a floating gate, induction of oppositely charged mobile carriers, and recombination between mobile and trapped carriers to restore the initial state.

  4. Phosphate transporters: a tale of two solute carrier families.

    PubMed

    Virkki, Leila V; Biber, Jürg; Murer, Heini; Forster, Ian C

    2007-09-01

    Phosphate is an essential component of life and must be actively transported into cells against its electrochemical gradient. In vertebrates, two unrelated families of Na+ -dependent P(i) transporters carry out this task. Remarkably, the two families transport different P(i) species: whereas type II Na+/P(i) cotransporters (SCL34) prefer divalent HPO(4)(2-), type III Na(+)/P(i) cotransporters (SLC20) transport monovalent H2PO(4)(-). The SCL34 family comprises both electrogenic and electroneutral members that are expressed in various epithelia and other polarized cells. Through regulated activity in apical membranes of the gut and kidney, they maintain body P(i) homeostasis, and in salivary and mammary glands, liver, and testes they play a role in modulating the P(i) content of luminal fluids. The two SLC20 family members PiT-1 and PiT-2 are electrogenic and ubiquitously expressed and may serve a housekeeping role for cell P(i) homeostasis; however, also more specific roles are emerging for these transporters in, for example, bone mineralization. In this review, we focus on recent advances in the characterization of the transport kinetics, structure-function relationships, and physiological implications of having two distinct Na+/P(i) cotransporter families.

  5. TIM29 is a subunit of the human carrier translocase required for protein transport.

    PubMed

    Callegari, Sylvie; Richter, Frank; Chojnacka, Katarzyna; Jans, Daniel C; Lorenzi, Isotta; Pacheu-Grau, David; Jakobs, Stefan; Lenz, Christof; Urlaub, Henning; Dudek, Jan; Chacinska, Agnieszka; Rehling, Peter

    2016-12-01

    Hydrophobic inner mitochondrial membrane proteins with internal targeting signals, such as the metabolite carriers, use the carrier translocase (TIM22 complex) for transport into the inner membrane. Defects in this transport pathway have been associated with neurodegenerative disorders. While the TIM22 complex is well studied in baker's yeast, very little is known about the mammalian TIM22 complex. Using immunoprecipitation, we purified the human carrier translocase and identified a mitochondrial inner membrane protein TIM29 as a novel component, specific to metazoa. We show that TIM29 is a constituent of the 440 kDa TIM22 complex and interacts with oxidized TIM22. Our analyses demonstrate that TIM29 is required for the structural integrity of the TIM22 complex and for import of substrate proteins by the carrier translocase.

  6. Role of band states and trap states in the charge transport properties of organic semiconductors (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Coropceanu, Veaceslav

    2016-11-01

    In this contribution, we examine the main factors that define charge transport in organic semiconductors. We consider both crystals based on a single molecule building block, such as oligoacenes, and two-component donor-acceptor crystals in which one component acts as an electron donor and the other as an acceptor. We will first discuss the state-of-the-art methodologies used in the derivation of the microscopic parameters (electron-vibration couplings, transfer integrals, band gaps, bandwidths, and effective masses) describing charge transport. In particular, we will discuss the impact that the amount of nonlocal Hartree-Fock exchange included in a hybrid density functional has on these parameters. In order to understand the role of disorder we use a combination of electronic-structure calculations and molecular mechanics/molecular dynamics simulations complemented by ensemble and time average approaches to separate the static and dynamic disorder components. The temperature dependence of the charge carrier mobility is studied by treating the electron-phonon interaction as a perturbation (Boltzmann theory), in the static approximation (Kubo formalism) and in the framework of mixed quantum/classical dynamics. Finally, based on the results of the kinetic Monte Carlo simulations we will compare the merits of a hopping model and a mobility edge model in the description of the effect of charge-carrier concentration on the electrical conductivity, carrier mobility, and Fermi energy of organic semiconductors.

  7. Inorganic/organic hybrid solar cells: optimal carrier transport in vertically aligned silicon nanowire arrays.

    PubMed

    Sato, Keisuke; Dutta, Mrinal; Fukata, Naoki

    2014-06-07

    Inorganic/organic hybrid radial heterojunction solar cells that combine vertically-aligned n-type silicon nanowires (SiNWs) with poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) have great potential for replacing commercial Si solar cells. The chief advantage of such solar cells is that they exhibit higher absorbance for a given thickness than commercial Si solar cells, due to incident light-trapping within the NW arrays, thus enabling lower-cost solar cell production. We report herein on the effects of NW length, annealing and surface electrode on the device performance of SiNW/PEDOT:PSS hybrid radial heterojunction solar cells. The power conversion efficiency (PCE) of the obtained SiNW/PEDOT:PSS hybrid solar cells can be optimized by tuning the thickness of the surface electrode, and the etching conditions during NW formation and post-annealing. The PCE of 9.3% is obtained by forming efficient transport pathways for photogenerated charge carriers to electrodes. Our approach is a significant contribution to design of high-performance and low-cost inorganic/organic hybrid heterojunction solar cells.

  8. Long-lived charge carrier generation in ordered films of a covalent perylenediimide–diketopyrrolopyrrole–perylenediimide molecule

    DOE PAGES

    Hartnett, Patrick E.; Dyar, Scott M.; Margulies, Eric A.; ...

    2015-07-31

    The photophysics of a covalently linked perylenediimide–diketopyrrolopyrrole–perylenediimide acceptor–donor–acceptor molecule (PDI–DPP–PDI, 1) were investigated and found to be markedly different in solution versus in unannealed and solvent annealed films. Photoexcitation of 1 in toluene results in quantitative charge separation in τ = 3.1 ± 0.2 ps, with charge recombination in τ = 340 ± 10 ps, while in unannealed/disordered films of 1, charge separation occurs in τ < 250 fs, while charge recombination displays a multiexponential decay in ~6 ns. The absence of long-lived, charge separation in the disordered film suggests that few free charge carriers are generated. In contrast, uponmore » CH₂Cl₂ vapor annealing films of 1, grazing-incidence X-ray scattering shows that the molecules form a more ordered structure. Photoexcitation of the ordered films results in initial formation of a spin-correlated radical ion pair (electron–hole pair) as indicated by magnetic field effects on the formation of free charge carriers which live for ~4 μs. This result has significant implications for the design of organic solar cells based on covalent donor–acceptor systems and shows that long-lived, charge-separated states can be achieved by controlling intramolecular charge separation dynamics in well-ordered systems.« less

  9. Long-lived charge carrier generation in ordered films of a covalent perylenediimide–diketopyrrolopyrrole–perylenediimide molecule

    SciTech Connect

    Hartnett, Patrick E.; Dyar, Scott M.; Margulies, Eric A.; Shoer, Leah E.; Cook, Andrew W.; Eaton, Samuel W.; Marks, Tobin J.; Wasielewski, Michael R.

    2015-07-31

    The photophysics of a covalently linked perylenediimide–diketopyrrolopyrrole–perylenediimide acceptor–donor–acceptor molecule (PDI–DPP–PDI, 1) were investigated and found to be markedly different in solution versus in unannealed and solvent annealed films. Photoexcitation of 1 in toluene results in quantitative charge separation in τ = 3.1 ± 0.2 ps, with charge recombination in τ = 340 ± 10 ps, while in unannealed/disordered films of 1, charge separation occurs in τ < 250 fs, while charge recombination displays a multiexponential decay in ~6 ns. The absence of long-lived, charge separation in the disordered film suggests that few free charge carriers are generated. In contrast, upon CH₂Cl₂ vapor annealing films of 1, grazing-incidence X-ray scattering shows that the molecules form a more ordered structure. Photoexcitation of the ordered films results in initial formation of a spin-correlated radical ion pair (electron–hole pair) as indicated by magnetic field effects on the formation of free charge carriers which live for ~4 μs. This result has significant implications for the design of organic solar cells based on covalent donor–acceptor systems and shows that long-lived, charge-separated states can be achieved by controlling intramolecular charge separation dynamics in well-ordered systems.

  10. Charge transport properties of CdMnTe radiation detectors

    SciTech Connect

    Kim K.; Rafiel, R.; Boardman, M.; Reinhard, I.; Sarbutt, A.; Watt, G.; Watt, C.; Uxa, S.; Prokopovich, D.A.; Belas, E.; Bolotnikov, A.E.; James, R.B.

    2012-04-11

    Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe)radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading chargecollection is reduced with increasing values of bias voltage. The electron transit time was determined from time of flight measurements. From the dependence of drift velocity on applied electric field the electron mobility was found to be n = (718 55) cm2/Vs at room temperature.

  11. Charge transport in gapless electron-hole systems with arbitrary band dispersion

    NASA Astrophysics Data System (ADS)

    Das Sarma, S.; Hwang, E. H.

    2015-05-01

    Using the semiclassical Boltzmann transport theory, we analytically consider dc charge transport in gapless electron-hole (both chiral and nonchiral) systems in the presence of resistive scattering due to static disorder arising from random quenched impurities in the background. We obtain the dependence of the Boltzmann conductivity on carrier density and temperature for arbitrary band dispersion in arbitrary dimensionality assuming long-range (˜1 /r ) Coulomb disorder and zero-range white-noise disorder [˜δ (r ) ]. We establish that the temperature and the density dependence of the Boltzmann conductivity manifests scaling behaviors determining, respectively, the intrinsic semimetallic or the extrinsic metallic property of the gapless system. Our results apply equally well to both chiral and nonchiral gapless systems, and provide a qualitative understanding of the dependence of the Boltzmann conductivity on the band dispersion in arbitrary dimensionality.

  12. Charge carrier dynamics and surface plasmon interaction in gold nanorod-blended organic solar cell

    NASA Astrophysics Data System (ADS)

    Rana, Aniket; Gupta, Neeraj; Lochan, Abhiram; Sharma, G. D.; Chand, Suresh; Kumar, Mahesh; Singh, Rajiv K.

    2016-08-01

    The inclusion of plasmonic nanoparticles into organic solar cell enhances the light harvesting properties that lead to higher power conversion efficiency without altering the device configuration. This work defines the consequences of the nanoparticle overloading amount and energy transfer process between gold nanorod and polymer (active matrix) in organic solar cells. We have studied the hole population decay dynamics coupled with gold nanorods loading amount which provides better understanding about device performance limiting factors. The exciton and plasmon together act as an interacting dipole; however, the energy exchange between these two has been elucidated via plasmon resonance energy transfer (PRET) mechanism. Further, the charge species have been identified specifically with respect to their energy levels appearing in ultrafast time domain. The specific interaction of these charge species with respective surface plasmon resonance mode, i.e., exciton to transverse mode of oscillation and polaron pair to longitudinal mode of oscillations, has been explained. Thus, our analysis reveals that PRET enhances the carrier population density in polymer via non-radiative process beyond the concurrence of a particular plasmon resonance oscillation mode and polymer absorption range. These findings give new insight and reveal specifically the factors that enhance and control the performance of gold nanorods blended organic solar cells. This work would lead in the emergence of future plasmon based efficient organic electronic devices.

  13. Wave propagation and optical properties in slabs with light-induced free charge carriers.

    PubMed

    Lencina, Alberto; Vaveliuk, Pablo; Ruiz, Beatriz; Tebaldi, Myrian; Bolognini, Néstor

    2006-11-01

    A theoretical analysis on wave propagation and optical properties of slabs with light-induced free charge carriers within a Fabry-Pérot framework is presented. The key of the analysis is to attack the wave propagation problem in terms of the time-averaged Poynting vector modulus within the medium through an alternative approach. This fact allows coupling the microscopic (free charge rate) and macroscopic (electromagnetic field evolution) equations self-consistently by means of the nonlinear permittivity and conductivity, which, in turn, depend on the time-averaged Poynting vector modulus. Thereby, the transmittance, reflectance, and absorptive power are derived as functions of the pump intensity and medium thickness. Bistable behavior is found at relatively high excitation intensity for positive values of the nonlinear permittivity coefficient. The bistability enhances for increasing values of such coefficient and weakens for increasing values of nonlinear photoconductivity coefficient. On the contrary, for negative nonlinear permittivity coefficient, bistability does not appear possessing these media mirrorlike behavior. Some possible applications are suggested.

  14. Initiating and imaging the coherent surface dynamics of charge carriers in real space

    PubMed Central

    Rusimova, K. R.; Bannister, N.; Harrison, P.; Lock, D.; Crampin, S.; Palmer, R. E.; Sloan, P. A.

    2016-01-01

    The tip of a scanning tunnelling microscope is an atomic-scale source of electrons and holes. As the injected charge spreads out, it can induce adsorbed molecules to react. By comparing large-scale ‘before' and ‘after' images of an adsorbate covered surface, the spatial extent of the nonlocal manipulation is revealed. Here, we measure the nonlocal manipulation of toluene molecules on the Si(111)-7 × 7 surface at room temperature. Both the range and probability of nonlocal manipulation have a voltage dependence. A region within 5–15 nm of the injection site shows a marked reduction in manipulation. We propose that this region marks the extent of the initial coherent (that is, ballistic) time-dependent evolution of the injected charge carrier. Using scanning tunnelling spectroscopy, we develop a model of this time-dependent expansion of the initially localized hole wavepacket within a particular surface state and deduce a quantum coherence (ballistic) lifetime of ∼10 fs. PMID:27677938

  15. Nonlinear charge transport in the helicoidal DNA molecule.

    PubMed

    Dang Koko, A; Tabi, C B; Ekobena Fouda, H P; Mohamadou, A; Kofané, T C

    2012-12-01

    Charge transport in the twist-opening model of DNA is explored via the modulational instability of a plane wave. The dynamics of charge is shown to be governed, in the adiabatic approximation, by a modified discrete nonlinear Schrödinger equation with next-nearest neighbor interactions. The linear stability analysis is performed on the latter and manifestations of the modulational instability are discussed according to the value of the parameter α, which measures hopping interaction correction. In so doing, increasing α leads to a reduction of the instability domain and, therefore, increases our chances of choosing appropriate values of parameters that could give rise to pattern formation in the twist-opening model. Our analytical predictions are verified numerically, where the generic equations for the radial and torsional dynamics are directly integrated. The impact of charge migration on the above degrees of freedom is discussed for different values of α. Soliton-like and localized structures are observed and thus confirm our analytical predictions. We also find that polaronic structures, as known in DNA charge transport, are generated through modulational instability, and hence reinforces the robustness of polaron in the model we study.

  16. Measurement of carrier transport and recombination parameter in heavily doped silicon

    NASA Technical Reports Server (NTRS)

    Swanson, Richard M.

    1986-01-01

    The minority carrier transport and recombination parameters in heavily doped bulk silicon were measured. Both Si:P and Si:B with bulk dopings from 10 to the 17th and 10 to the 20th power/cu cm were studied. It is shown that three parameters characterize transport in bulk heavily doped Si: the minority carrier lifetime tau, the minority carrier mobility mu, and the equilibrium minority carrier density of n sub 0 and p sub 0 (in p-type and n-type Si respectively.) However, dc current-voltage measurements can never measure all three of these parameters, and some ac or time-transient experiment is required to obtain the values of these parameters as a function of dopant density. Using both dc electrical measurements on bipolar transitors with heavily doped base regions and transients optical measurements on heavily doped bulk and epitaxially grown samples, lifetime, mobility, and bandgap narrowing were measured as a function of both p and n type dopant densities. Best fits of minority carrier mobility, bandgap narrowing and lifetime as a function of doping density (in the heavily doped range) were constructed to allow accurate modeling of minority carrier transport in heavily doped Si.

  17. Homoleptic copper(I) arylthiolates as a new class of p-type charge carriers: structures and charge mobility studies.

    PubMed

    Che, Chi-Ming; Li, Cheng-Hui; Chui, Stephen Sin-Yin; Roy, V A L; Low, Kam-Hung

    2008-01-01

    ) could be correlated with their unique chain-like copper-sulfur networks, with the para-substituent of the arylthiolate ligand influencing the charge-transport properties.

  18. An acoustic charge transport imager for high definition television applications

    NASA Technical Reports Server (NTRS)

    Hunt, W. D.; Brennan, K. F.; Summers, C. J.

    1994-01-01

    The primary goal of this research is to develop a solid-state television (HDTV) imager chip operating at a frame rate of about 170 frames/sec at 2 Megapixels/frame. This imager will offer an order of magnitude improvements in speed over CCD designs and will allow for monolithic imagers operating from the IR to UV. The technical approach of the project focuses on the development of the three basic components of the imager and their subsequent integration. The camera chip can be divided into three distinct functions: (1) image capture via an array of avalanche photodiodes (APD's); (2) charge collection, storage, and overflow control via a charge transfer transistor device (CTD); and (3) charge readout via an array of acoustic charge transport (ACT) channels. The use of APD's allows for front end gain at low noise and low operating voltages while the ACT readout enables concomitant high speed and high charge transfer efficiency. Currently work is progressing towards the optimization of each of these component devices. In addition to the development of each of the three distinct components, work towards their integration and manufacturability is also progressing. The component designs are considered not only to meet individual specifications but to provide overall system level performance suitable for HDTV operation upon integration. The ultimate manufacturability and reliability of the chip constrains the design as well. The progress made during this period is described in detail.

  19. An acoustic charge transport imager for high definition television applications

    NASA Technical Reports Server (NTRS)

    Hunt, W. D.; Brennan, Kevin F.

    1994-01-01

    The primary goal of this research is to develop a solid-state high definition television (HDTV) imager chip operating at a frame rate of about 170 frames/sec at 2 Megapixels per frame. This imager offers an order of magnitude improvement in speed over CCD designs and will allow for monolithic imagers operating from the IR to the UV. The technical approach of the project focuses on the development of the three basic components of the imager and their integration. The imager chip can be divided into three distinct components: (1) image capture via an array of avalanche photodiodes (APD's), (2) charge collection, storage and overflow control via a charge transfer transistor device (CTD), and (3) charge readout via an array of acoustic charge transport (ACT) channels. The use of APD's allows for front end gain at low noise and low operating voltages while the ACT readout enables concomitant high speed and high charge transfer efficiency. Currently work is progressing towards the development of manufacturable designs for each of these component devices. In addition to the development of each of the three distinct components, work towards their integration is also progressing. The component designs are considered not only to meet individual specifications but to provide overall system level performance suitable for HDTV operation upon integration. The ultimate manufacturability and reliability of the chip constrains the design as well. The progress made during this period is described in detail in Sections 2-4.

  20. Aggregate-mediated charge transport in ionomeric electrolytes

    NASA Astrophysics Data System (ADS)

    Lu, Keran; Maranas, Janna; Milner, Scott

    Polymers such PEO can conduct ions, and have been studied as possible replacements for organic liquid electrolytes in rechargeable metal-ion batteries. More generally, fast room-temperature ionic conduction has been reported for a variety of materials, from liquids to crystalline solids. Unfortunately, polymer electrolytes generally have limited conductivity; these polymers are too viscous to have fast ion diffusion like liquids, and too unstructured to promote cooperative transport like crystalline solids. Ionomers are polymer electrolytes in which ionic groups are covalently bound to the polymer backbone, neutralized by free counterions. These materials also conduct ions, and can exhibit strong ionic aggregation. Using coarse-grained molecular dynamics, we explore the forces driving ionic aggregation, and describe the role ion aggregates have in mediating charge transport. The aggregates are string-like such that ions typically have two neighbors. We find ion aggregates self-assemble like worm-like micelles. Excess charge, or free ions, occasionally coordinate with aggregates and are transported along the chain in a Grotthuss-like mechanism. We propose that controlling ionomer aggregate structure through materials design can enhance cooperative ion transport.

  1. Space-Charge Transport Limits in Periodic Channels

    SciTech Connect

    Lund, S M; Chawla, S R

    2005-05-16

    It has been empirically observed in both experiments and particle-in-cell simulations that space-charge-dominated beams suffer strong emittance growth and particle losses in alternating gradient quadrupole transport channels when the undepressed phase advance {sigma}{sub 0} increases beyond about 85{sup o} per lattice period. Although this criteria has been used extensively in practical designs of intense beam transport lattices, no theory exists that explains the limit. We propose a mechanism for the transport limit resulting from classes of halo particle resonances near the core of the beam that allow near-edge particles to rapidly increase in oscillation amplitude when the space-charge intensity and the flutter of the matched beam envelope are both sufficiently large. Due to a finite beam edge and/or perturbations, this mechanism can result in dramatic halo-driven increases in statistical beam phase space area, lost particles, and degraded transport. A core-particle model for a uniform density elliptical beam in a periodic focusing lattice is applied to parametrically analyze this process.

  2. Dislocation-assisted tunnelling of charge carriers across the Schottky barrier on the hydride vapour phase epitaxy grown GaN

    NASA Astrophysics Data System (ADS)

    Chatterjee, Abhishek; Khamari, Shailesh K.; Dixit, V. K.; Oak, S. M.; Sharma, T. K.

    2015-11-01

    Barrier height and Ideality factor of Ni/n-GaN Schottky diodes are measured by performing temperature dependent current-voltage measurements. The measured value of barrier height is found to be much smaller than the theoretically calculated Schottky-Mott barrier height for the Ni/n-GaN diodes. Furthermore, a high value of ideality factor (>2) is measured at low temperatures. In order to understand these results, we need to consider a double Gaussian distribution of barrier height where the two components are related to the thermionic emission and thermionic filed emission mediated by dislocation-assisted tunnelling of carriers across the Schottky barrier. Thermionic emission is seen to dominate at temperatures higher than 170 K while the dislocation-assisted tunnelling dominates at low temperatures. The value of characteristic tunnelling energy measured from the forward bias current-voltage curves also confirms the dominance of dislocation-assisted tunnelling at low temperatures which is strongly corroborated by the Hall measurements. However, the value of characteristic tunnelling energy for high temperature range cannot be supported by the Hall results. This discrepancy can be eliminated by invoking a two layer model to analyse the Hall data which confirms that the charged dislocations, which reach the sample surface from the layer-substrate interface, provide an alternate path for the transport of carriers. The dislocation-assisted tunnelling of carriers governs the values of Schottky diode parameters at low temperature and the same is responsible for the observed inhomogeneity in the values of barrier height. The present analysis is applicable wherever the charge transport characteristics are severely affected by the presence of a degenerate layer at GaN-Sapphire interface and dislocations lines pierce the Schottky junction to facilitate the tunnelling of carriers.

  3. Ultrafast relaxation and transfer of charge carriers in type-II heterodoping (n-i-p-i) superlattices

    NASA Astrophysics Data System (ADS)

    Moritz, N.; Hauenstein, H. M.; Seilmeier, A.

    1995-12-01

    In all-optical experiments, transient nonlinear absorption changes due to band filling and the Franz-Keldysh effect are used to study the ultrafast dynamics of charge carriers in AlxGa1-xAs type-II-hetero-n-i-p-i structures containing a single 20-nm-wide GaAs quantum well in each Ultrafast relaxation and transfer of charge carriers in type-II heterodoping superlattices intrinsic region. Pump pulses of 0.6 ps duration inject electron-hole pairs exclusively in the quantum wells located in the region with high electric field. We observe carrier cooling and thermionic transfer of the thermalized carriers perpendicular to the layers. The measured transfer times between ~50 and ~500 ps are found to increase with excitation power. The transfer process is followed by lateral carrier diffusion and, finally, by interband recombination which proceeds on a time scale from 100 μs to several seconds depending on the density of photoexcited carriers. The experimental results are compared with model calculations on Thomas-Fermi approximation.

  4. Charge Density and Molecular Weight of Polyphosphoramidate Gene Carrier Are Key Parameters Influencing Its DNA Compaction Ability and Transfection Efficiency

    PubMed Central

    Ren, Yong; Jiang, Xuan; Pan, Deng; Mao, Hai-Quan

    2011-01-01

    A series of polyphosphoramidates (PPA) with different molecular weights (MWs) and charge densities were synthesized and examined for their DNA compaction ability and transfection efficiency. A strong correlation was observed between the transfection efficiency of PPA/DNA nanoparticles and the MW and net positive charge density of the PPA gene carriers in three different cell lines (HeLa, HEK293 and HepG2 cells). An increase in MW and/or net positive charge density of PPA carrier yielded higher DNA compaction capacity, smaller nanoparticles with higher surface charges and higher complex stability against challenges by salt and polyanions. These favorable physicochemical properties of nanoparticles led to enhanced transfection efficiency. PPA/DNA nanoparticles with the highest complex stability showed comparable transfection efficiency as PEI/DNA nanoparticles likely by compensating the low buffering capacity with higher cellular uptake and affording higher level of protection to DNA in endolysosomal compartment. The differences in transfection efficiency were not attributed by any difference in cytotoxicity among the carriers, as all nanoparticles showed minimal level of cytotoxicity under the transfection conditions. Using PPA as a model system, we demonstrated the structural dependence of transfection efficiency of polymer gene carrier. These results offer more insights into nanoparticle engineering for non-viral gene delivery. PMID:21067136

  5. Study of the effect of the charge transport layer in the electrical characteristics of the organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Rahimi, Ronak; Roberts, Alex; Narang, V.; Kumbham, Vamsi Krishna; Korakakis, D.

    2013-09-01

    Significant progress in fabrication and optimization of organic photovoltaics (OPVs) has been made during the last decade. The main reason for popularity of OPVs is due to their low production cost, large area devices and compatibility with flexible substrates 1-3. Various approaches including optimizing morphology of the active layers 1, 2, introducing new materials as the donor and acceptor 3,4, new device structures such as tandem structure 5, 6 have been adapted to improve the efficiency of the organic photovoltaics. However, electrical characteristics of the OPVs do not only depend on the active layer materials or device structure. They can also be defined by the interface properties between active layers and the charge transport layers or the metal contacts. Within this paper, the effect of the thickness variation of the charge transport layer in the electrical properties of the bilayer heterojunction OPVs has been studied. Several devices with CuPc/PTCDI-C8 as the donor/acceptor layers have been fabricated with different thicknesses of electron transport layer. MoO3 and Alq3 have been used respectively as the hole transport layer (HTL) and the electron transport layer (ETL). It has been shown that the S-shape effect in the current-voltage curve is attributed to the accumulation of the charge carriers at the interface between the active layer and the charge transport layer 5, 7.

  6. Study of the effect of the charge transport layer in the electrical characteristics of the organic photovoltaics

    NASA Astrophysics Data System (ADS)

    Rahimi, Ronak; Roberts, Alex; Narang, V.; Kumbham, Vamsi Krishna; Korakakis, D.

    2013-03-01

    Significant progress in fabrication and optimization of organic photovoltaics (OPVs) has been made during the last decade. The main reason for popularity of OPVs is due to their low production cost, large area devices and compatibility with flexible substrates [1-3]. Various approaches including optimizing morphology of the active layers [1,2], introducing new materials as the donor and acceptor [3,4], new device structures such as tandem structure [5,6] have been adapted to improve the efficiency of the organic photovoltaics. However, electrical characteristics of the OPVs do not only depend on the active layer materials or device structure. They can also be defined by the interface properties between active layers and the charge transport layers or the metal contacts. Within this paper, the effect of the thickness variation of the charge transport layer in the electrical properties of the bilayer heterojunction OPVs has been studied. Several devices with CuPc/PTCDI-C8 as the donor/acceptor layers have been fabricated with different thicknesses of electron transport layer. MoO3 and Alq3 have been used respectively as the hole transport layer (HTL) and the electron transport layer (ETL). It has been shown that the S-shape effect in the current-voltage curve is attributed to the accumulation of the charge carriers at the interface between the active layer and the charge transport layer [5,7].

  7. Charge transport in organic donor-acceptor mixed-stack crystals: the role of nonlocal electron-phonon couplings.

    PubMed

    Zhu, Lingyun; Geng, Hua; Yi, Yuanping; Wei, Zhixiang

    2017-02-08

    The charge-transport properties in C8BTBT-FnTCNQ and DMQtT-F4TCNQ mixed-stack crystals have been investigated by means of density functional theory, molecular dynamics and kinetic Monte Carlo simulations. The super-exchange nature of charge transport in these crystals is elucidated by the Larsson partition-based electronic coupling method that was developed recently by us. Compared with hole transport, in addition to the donor HOMO-acceptor LUMO interaction, the interaction between the donor HOMO-1 and the acceptor LUMO will also make an important contribution to electron transport. Moreover, this additional interaction plays an opposite role and results in electron-dominant and hole-dominant transport in the C8BTBT-FnTCNQ and DMQtT-F4TCNQ crystals, respectively. Most importantly, our calculations point out that the nonlocal electron-phonon couplings are very weak and much smaller than the electronic couplings in all the studied crystals. This implies that the nonlocal couplings have little influence on charge transport. In contrast to the experimental measurements, the external reorganization energies are thus expected to play an essential role in determining charge carrier mobilities. These findings pave the way for rational design of high performance organic donor-acceptor mixed-stack semiconductors.

  8. Charge transport across tunable superlattice barriers in graphene

    NASA Astrophysics Data System (ADS)

    Dubey, Sudipta; Bhat, Ajay; Singh, Vibhor; Parikh, Pritesh; Prakash, Tanuj; Sebastian, Abhilash; Padmalekha, K. G.; Sengupta, Krishnendu; Tripathi, Vikram; Sensarma, Rajdeep; Deshmukh, Mandar

    2013-03-01

    We create an artificial superlattice structure in graphene using an array of top gate and a bottom gate. A superlattice potential modifies the band structure of graphene, so that extra Dirac points appear in the dispersion periodically as a function of the superlattice barrier height. Tuning the amplitude of the barrier thus gives us control over number of Dirac points generated. We have performed measurements on this superlattice structure. Oscillations in resistance are observed when the charge carrier induced by top gate and back gate are of opposite sign. In this region, the number of oscillations increases with increasing gate voltage. Measurements as a function of temperature show that these oscillations persist even at 70 K. The behaviour of these oscillations in presence of magnetic field is also observed. At low magnetic field we see weak localisation behaviour. At high magnetic field, the superlattice is a small perturbation and quantum Hall effect of pristine graphene is restored.

  9. Normal and impaired charge transport in biological systems

    NASA Astrophysics Data System (ADS)

    Miller, John H.; Villagrán, Martha Y. Suárez; Maric, Sladjana; Briggs, James M.

    2015-03-01

    We examine the physics behind some of the causes (e.g., hole migration and localization that cause incorrect base pairing in DNA) and effects (due to amino acid replacements affecting mitochondrial charge transport) of disease-implicated point mutations, with emphasis on mutations affecting mitochondrial DNA (mtDNA). First we discuss hole transport and localization in DNA, including some of our quantum mechanical modeling results, as they relate to certain mutations in cancer. Next, we give an overview of electron and proton transport in the mitochondrial electron transport chain, and how such transport can become impaired by mutations implicated in neurodegenerative diseases, cancer, and other major illnesses. In particular, we report on our molecular dynamics (MD) studies of a leucine→arginine amino acid replacement in ATP synthase, encoded by the T→G point mutation at locus 8993 of mtDNA. This mutation causes Leigh syndrome, a devastating maternally inherited neuromuscular disorder, and has been found to trigger rapid tumor growth in prostate cancer cell lines. Our MD results suggest, for the first time, that this mutation adversely affects water channels that transport protons to and from the c-ring of the rotary motor ATP synthase, thus impairing the ability of the motor to produce ATP. Finally, we discuss possible future research topics for biological physics, such as mitochondrial complex I, a large proton-pumping machine whose physics remains poorly understood.

  10. Charge transport in dye-sensitized solar cell

    NASA Astrophysics Data System (ADS)

    Yanagida, Masatoshi

    2015-03-01

    The effect of charge transport on the photovoltaic properties of dye-sensitized solar cells (DSCs) was investigated by the experimental results and the ion transport. The short current photocurrent density (Jsc) is determined by the electron transport in porous TiO2 when the diffusion limited current (Jdif) due to the {{I}3}- transport is larger than the photo-generated electron flux (Jg) estimated from the light harvesting efficiency of dye-sensitized porous TiO2 and the solar spectrum. However, the Jsc value is determined by the ion transport in the electrolyte solution at Jdif < Jg. The J value becomes constant against light intensity, and is expressed as the saturated current (Jscs). The {{J}s} value depends on the thickness (d) of the TiO2 layer, the initial concentration (COX0), and the diffusion coefficient (DOXb) of {{I}3}-. These suitable parameters were determined by using the ion transport. Invited talk at the 7th International Workshop on Advanced Materials Science and Nanotechnology IWAMSN2014, 2-6 November, 2014, Ha Long, Vietnam.

  11. 19 CFR 351.515 - Internal transport and freight charges for export shipments.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 19 Customs Duties 3 2010-04-01 2010-04-01 false Internal transport and freight charges for export... Internal transport and freight charges for export shipments. (a) Benefit—(1) In general. In the case of internal transport and freight charges on export shipments, a benefit exists to the extent that the...

  12. Charge transport model in solid-state avalanche amorphous selenium and defect suppression design

    NASA Astrophysics Data System (ADS)

    Scheuermann, James R.; Miranda, Yesenia; Liu, Hongyu; Zhao, Wei

    2016-01-01

    Avalanche amorphous selenium (a-Se) in a layer of High Gain Avalanche Rushing Photoconductor (HARP) is being investigated for its use in large area medical imagers. Avalanche multiplication of photogenerated charge requires electric fields greater than 70 V μm-1. For a-Se to withstand this high electric field, blocking layers are used to prevent the injection of charge carriers from the electrodes. Blocking layers must have a high injection barrier and deep trapping states to reduce the electric field at the interface. In the presence of a defect in the blocking layer, a distributed resistive layer (DRL) must be included into the structure to build up space charge and reduce the electric field in a-Se and the defect. A numerical charge transport model has been developed to optimize the properties of blocking layers used in various HARP structures. The model shows the incorporation of a DRL functionality into the p-layer can reduce dark current at a point defect by two orders of magnitude by reducing the field in a-Se to the avalanche threshold. Hole mobility in a DRL of ˜10-8 cm2 V-1 s-1 at 100 V μm-1 as demonstrated by the model can be achieved experimentally by varying the hole mobility of p-type organic or inorganic semiconductors through doping, e.g., using Poly(9-vinylcarbozole) doped with 1%-3% (by weight) of poly(3-hexylthiopene).

  13. Secondary electron emission and self-consistent charge transport in semi-insulating samples

    SciTech Connect

    Fitting, H.-J.; Touzin, M.

    2011-08-15

    Electron beam induced self-consistent charge transport and secondary electron emission (SEE) in insulators are described by means of an electron-hole flight-drift model (FDM) now extended by a certain intrinsic conductivity (c) and are implemented by an iterative computer simulation. Ballistic secondary electrons (SE) and holes, their attenuation to drifting charge carriers, and their recombination, trapping, and field- and temperature-dependent detrapping are included. As a main result the time dependent ''true'' secondary electron emission rate {delta}(t) released from the target material and based on ballistic electrons and the spatial distributions of currents j(x,t), charges {rho}(x,t), field F(x,t), and potential V(x,t) are obtained where V{sub 0} = V(0,t) presents the surface potential. The intrinsic electronic conductivity limits the charging process and leads to a conduction sample current to the support. In that case the steady-state total SE yield will be fixed below the unit: i.e., {sigma} {eta} + {delta} < 1.

  14. Charge Transport in Field-Effect Transistors based on Layered Materials and their Heterostructures

    NASA Astrophysics Data System (ADS)

    Kumar, Jatinder

    In the quest for energy efficiency and device miniaturization, the research in using atomically thin materials for device applications is gaining momentum. The electronic network in layered materials is different from 3D counterparts. It is due to the interlayer couplings and density of states because of their 2D nature. Therefore, understanding the charge transport in layered materials is fundamental to explore the vast opportunities these ultra-thin materials offer. Hence, the challenges targeted in the thesis are: (1) understanding the charge transport in layered materials based on electronic network of quantum and oxide capacitances, (2) studying thickness dependence, ranging from monolayer to bulk, of full range-characteristics of field-effect transistor (FET) based on layered materials, (3) investigating the total interface trap charges to achieve the ultimate subthreshold slope (SS) theoretically possible in FETs, (4) understanding the effect of the channel length on the performance of layered materials, (5) understanding the effect of substrate on performance of the TMDC FETs and studying if the interface of transition metal dichalcogenides (TMDCs)/hexagonalboron nitride (h-BN) can have less enough trap charges to observe ambipolar behavior, (6) Exploring optoelectronic properties in 2D heterostructures that includes understanding graphene/WS2 heterostructure and its optoelectronic applications by creating a p-n junction at the interface. The quality of materials and the interface are the issues for observing and extracting clean physics out of these layered materials and heterostructures. In this dissertation, we realized the use of quantum capacitance in layered materials, substrate effects and carrier transport in heterostructure.

  15. Charge transport across high surface area metal/diamond nanostructured composites.

    PubMed

    Plana, D; Humphrey, J J L; Bradley, K A; Celorrio, V; Fermín, D J

    2013-04-24

    High surface area composites featuring metal nanostructures and diamond particles have generated a lot of interest in the fields of heterogeneous catalysis, electrocatalysis, and sensors. Diamond surfaces provide a chemically robust framework for active nanostructures in comparison with sp(2) carbon supports. The present paper investigates the charge transport properties of high surface area films of high-pressure, high-temperature diamond particles in the presence and absence of metal nanostructures, employing electrochemical field-effect transistors. Oxygen- and hydrogen-terminated surfaces were generated on 500 nm diamond powders. Homogeneously distributed metal nanostructures, with metal volume fractions between ca. 5 and 20%, were either nucleated at the diamond particles by impregnation or incorporated from colloidal solution. Electrochemical field-effect transistor measurements, employing interdigitated electrodes, allowed the determination of composite conductivity as a function of electrode potential, as well as in air. In the absence of metal nanostructures, the lateral conductivity of the diamond assemblies in air is increased by over one order of magnitude upon hydrogenation of the particle surface. This observation is consistent with studies at diamond single crystals, although the somewhat modest change in conductivity suggests that charge transport is not only determined by the intrinsic surface conductivity of individual diamond particles but also by particle-to-particle charge transfer. Interestingly, the latter contribution effectively controls the assembly conductivity in the presence of an electrolyte solution as the difference between hydrogenated and oxygenated particles vanishes. The conductivity in the presence of metal nanoparticles is mainly determined by the metal volume fraction, while diamond surface termination and the presence of electrolyte solutions exert only minor effects. The experimental trends are discussed in terms of the

  16. Intrinsic non-ohmic electronic transport properties of the transparent In-Zn-O compound nanobelts under ohmic contact and out of the space charge limited transport region

    NASA Astrophysics Data System (ADS)

    Wen, Jing; Zhang, Xitian; Gao, Hong

    2016-02-01

    It is generally accepted that the nonlinear I-V characteristics for semiconductor nanostructures are mainly induced by the Schottky contacts or by the space charge limited transport mechanism. We perform I-V measurements on undoped and doped In-Zn-O compound nanobelts and confirm that their intrinsic non-ohmic transport behaviors are not caused by these mechanisms. A model based on the hopping assisted trap state electrons transport process is introduced to explain the nonlinear I-V characteristics and to extract their electrical parameters. An understanding of this trap-state influenced carrier transport can advance the progress of nanomaterials applications and enable us to distinguish their intrinsic transport behaviors from contact effects. The results also indicate that the material has good electrical properties and can be used as a potential substitute for In2O3.

  17. On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures

    SciTech Connect

    Aleksandrov, P. A. Belova, N. E.; Demakov, K. D.; Shemardov, S. G.

    2015-08-15

    A method for the production of high-quality radiation-resistant silicon-on-sapphire structures through the fabrication of a layer of nanopores in sapphire by helium ion implantation, i.e., by creating charge-carrier recombination centers, is proposed. In this case, the quality of the silicon layer is simultaneously improved. The problem of the thermal stability of the pores is discussed with the aim of analyzing the possibility of producing a microcircuit on the resultant modified silicon-on-sapphire sample. The layer of pores possesses a large total surface area and, hence, decreases the lifetime of charge carriers generated during irradiation of the operating microcircuit. This effect reduces the charge at the silicon-sapphire interface and improves radiation resistance.

  18. Intrinsic and Extrinsic Charge Transport in CH3NH3PbI3 Perovskites Predicted from First-Principles

    PubMed Central

    Zhao, Tianqi; Shi, Wen; Xi, Jinyang; Wang, Dong; Shuai, Zhigang

    2016-01-01

    Both intrinsic and extrinsic charge transport properties of methylammonium lead triiodide perovskites are investigated from first-principles. The weak electron-phonon couplings are revealed, with the largest deformation potential (~ 5 eV) comparable to that of single layer graphene. The intrinsic mobility limited by the acoustic phonon scattering is as high as a few thousands cm2 V−1 s−1 with the hole mobility larger than the electron mobility. At the impurity density of 1018 cm−3, the charged impurity scattering starts to dominate and lowers the electron mobility to 101 cm2 V−1 s−1 and the hole mobility to 72.2 cm2 V−1 s−1. The high intrinsic mobility warrants the long and balanced diffusion length of charge carriers. With the control of impurities or defects as well as charge traps in these perovskites, enhanced efficiencies of solar cells with simplified device structures are promised. PMID:26822239

  19. Analytical and numerical studies of photo-injected charge transport in molecularly-doped polymers

    NASA Astrophysics Data System (ADS)

    Roy Chowdhury, Amrita

    The mobility of photo-injected charge carriers in molecularly-doped polymers (MDPs) exhibits a commonly observed, and nearly universal Poole-Frenkel field dependence, mu exp√(beta0E), that has been shown to arise from the correlated Gaussian energy distribution of transport sites encountered by charges undergoing hopping transport through the material. Analytical and numerical studies of photo-injected charge transport in these materials are presented here with an attempt to understand how specific features of the various models developed to describe these systems depend on the microscopic parameters that define them. Specifically, previously published time-of-flight mobility data for the molecularly doped polymer 30% DEH:PC (polycarbonate doped with 30 wt.% aromatic hydrazone DEH) is compared with direct analytical and numerical predictions of five disorder-based models, the Gaussian disorder model (GDM) of Bassler, and four correlated disorder models introduced by Novikov, et al., and by Parris, et al. In these numerical studies, disorder parameters describing each model were varied from reasonable starting conditions, in order to give the best overall fit. The uncorrelated GDM describes the Poole-Frenkel field dependence of the mobility only at very high fields, but fails for fields lower than about 64 V/mum. The correlated disorder models with small amounts of geometrical disorder do a good over-all job of reproducing a robust Poole-Frenkel field dependence, with correlated disorder theories that employ polaron transition rates showing qualitatively better agreement with experiment than those that employ Miller-Abrahams rates. In a separate study, the heuristic treatment of spatial or geometric disorder incorporated in existing theories is critiqued, and a randomly-diluted lattice gas model is developed to describe the spatial disorder of the transport sites in a more realistic way.

  20. Disorder Effects in Charge Transport and Spin Response of Topological Insulators

    NASA Astrophysics Data System (ADS)

    Zhao, Lukas Zhonghua

    Topological insulators are a class of solids in which the non-trivial inverted bulk band structure gives rise to metallic surface states that are robust against impurity backscattering. First principle calculations predicted Bi2Te3, Sb2Te3 and Bi2Se3 to be three-dimensional (3D) topological insulators with a single Dirac cone on the surface. The topological surface states were subsequently observed by angle-resolved photoemission (ARPES) and scanning tunneling microscopy (STM). The investigations of charge transport through topological surfaces of 3D topological insulators, however, have faced a major challenge due to large charge carrier densities in the bulk donated by randomly distributed defects such as vacancies and antisites. This bulk disorder intermixes surface and bulk conduction channels, thereby complicating access to the low-energy (Dirac point) charge transport or magnetic response and resulting in the relatively low measured carrier mobilities. Moreover, charge inhomogeneity arising from bulk disorder can result in pronounced nanoscale spatial fluctuations of energy on the surface, leading to the formation of surface `puddles' of different carrier types. Great efforts have been made to combat the undesirable effects of disorder in 3D topological insulators and to reduce bulk carriers through chemical doping, nanostructure fabrication, and electric gating. In this work we have developed a new way to reduce bulk carrier densities using high-energy electron irradiation, thereby allowing us access to the topological surface quantum channels. We also found that disorder in 3D topological insulators can be beneficial. It can play an important part in enabling detection of unusual magnetic response from Dirac fermions and in uncovering new excitations, namely surface superconductivity in Dirac `puddles'. In Chapter 3 we show how by using differential magnetometry we could probe spin rotation in the 3D topological material family (Bi2Se 3, Bi2Te3 and Sb2Te3

  1. Switching and memory effects governed by the hopping mechanism of charge carrier transfer in composite films based on conducting polymers and inorganic nanoparticles

    NASA Astrophysics Data System (ADS)

    Aleshin, A. N.; Alexandrova, E. L.

    2008-10-01

    The switching and memory effects in composite films based on conducting polymers [poly(phenylenevinylene), thiophene, and carbazole derivatives] and inorganic nanoparticles (ZnO, Si) are investigated. It is established that the introduction of inorganic nanoparticles (ZnO, Si) exhibiting strong acceptor properties into polymer materials leads to the appearance of memory effects, which manifest themselves in the transition of the polymer from a low-conductivity state to a high-conductivity state. For a number of composites, this transition is accompanied by the formation of a region with a negative differential resistance and a hysteresis in the current-voltage characteristics. It is demonstrated that the observed effects are determined by the mechanism of charge carrier transfer in the composite. In particular, the main mechanism of transport in films based on thiophene derivatives is associated with electrical conduction due to the tunneling of charge carriers between conducting regions embedded in a nonconducting matrix, whereas the dominant mechanism of transport in “polymer-semiconductor nanoparticle” composite films is hopping conduction, which is responsible for the effects observed in these objects.

  2. Photogenerated carriers transport behaviors in L-cysteine capped ZnSe core-shell quantum dots

    SciTech Connect

    Shan, Qingsong; Li, Kuiying Lin, Yingying; Yin, Hua; Zhu, Ruiping; Xue, Zhenjie

    2016-02-07

    The photoexcited carrier transport behavior of zinc selenide (ZnSe) quantum dots (QDs) with core–shell structure is studied because of their unique photoelectronic characteristics. The surface photovoltaic (SPV) properties of self-assembled ZnSe/ZnS/L-Cys core–shell QDs were probed via electric field induced surface photovoltage and transient photovoltage (TPV) measurements supplemented by Fourier transform infrared, laser Raman, absorption, and photoluminescence spectroscopies. The ZnSe QDs displayed p-type SPV characteristics with a broader stronger SPV response over the whole ultraviolet-to-near-infrared range compared with those of other core–shell QDs in the same group. The relationship between the SPV phase value of the QDs and external bias was revealed in their SPV phase spectrum. The wide transient photovoltage response region from 3.3 × 10{sup −8} to 2 × 10{sup −3} s was closely related to the long diffusion distance of photoexcited free charge carriers in the interfacial space–charge region of the QDs. The strong SPV response corresponding to the ZnSe core mainly originated from an obvious quantum tunneling effect in the QDs.

  3. Ion transport through macrocapillaries - Oscillations due to charge patch formation

    NASA Astrophysics Data System (ADS)

    Kulkarni, D. D.; Lyle, L. A. M.; Sosolik, C. E.

    2016-09-01

    We present results on ion transport through large bore capillaries (macrocapillaries) that probe both the geometric and ion-guided aspects of this ion delivery mechanism. We have demonstrated that guiding in macrocapillaries exhibits position- and angle-dependent transmission properties which are directly related to the capillary material (either metal or insulator) and geometry. Specifically, we have passed 1 keV Rb+ ions through glass and metal macrocapillaries, and have observed oscillations for the transmitted ion current passing through the insulating capillaries. Straightforward calculations show that these oscillations can be attributed to beam deflections from charge patches that form on the interior walls of the capillary. The absence of these oscillations in the metal capillary data serve as further confirmation of the role of charge patch formation.

  4. Threshold for Transportation Charge Review Cost Benefit Analysis

    DTIC Science & Technology

    1990-07-01

    ole ai m o of Informtion is erstimreto rq htC0Ccion.ieldn ttm for 1111~~n mnttc2os ieem goewnS data vnu’rnq*Ve.I..o e (d me oin in o t ae ata ne.ed. sn...S u ite 1 0 4 .A ln g tO n . V A 2 2 2 0 2 -4 1 0 2 . a n d to th e O ff ice o f M a n a q e m e n t d u d e t. P"o t R e d u t ian P c 0ot1 0 ? 0...charges after they are reviewed and approved. This cost-benefit analysis found that the transportation charge threshold rhould be changed to $190. e

  5. Dust charging and transport on airless planetary bodies

    NASA Astrophysics Data System (ADS)

    Wang, X.; Schwan, J.; Hsu, H.-W.; Grün, E.; Horányi, M.

    2016-06-01

    We report on laboratory experiments to shed light on dust charging and transport that have been suggested to explain a variety of unusual phenomena on the surfaces of airless planetary bodies. We have recorded micron-sized insulating dust particles jumping to several centimeters high with an initial speed of ~0.6 m/s under ultraviolet illumination or exposure to plasmas, resulting in an equivalent height of ~0.11 m on the lunar surface that is comparable to the height of the so-called lunar horizon glow. Lofted large aggregates and surface mobilization are related to many space observations. We experimentally show that the emission and re-absorption of photoelectron and/or secondary electron at the walls of microcavities formed between neighboring dust particles below the surface are responsible for generating unexpectedly large negative charges and intense particle-particle repulsive forces to mobilize and lift off dust particles.

  6. Improved charge transportation at PbS QDs/TiO2 interface for efficient PEC hydrogen generation.

    PubMed

    Ikram, Ashi; Sahai, Sonal; Rai, Snigdha; Dass, Sahab; Shrivastav, Rohit; Satsangi, Vibha R

    2016-06-21

    The effect of lead sulfide (PbS) quantum dots (QDs) on the photoelectrochemical properties of TiO2 with a varied number of SILAR cycles has been investigated. The study has also highlighted physical processes including band alignment, charge recombination and transportation for a PbS QDs/TiO2 interface. The inclusion of PbS QDs underneath TiO2 thin film has significantly enhanced the PEC response due to a higher number of photogenerated charge carriers along with the efficient separation and facilitation of these carriers towards their respective electrodes. The uniqueness of the work lies in the high stability of the system as PbS QDs lie beneath the TiO2 thin film, compared to the commonly used QDs sensitization over metal oxide, along with a good photoresponse.

  7. 14 CFR 382.19 - May carriers refuse to provide transportation on the basis of disability?

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... 14 Aeronautics and Space 4 2012-01-01 2012-01-01 false May carriers refuse to provide transportation on the basis of disability? 382.19 Section 382.19 Aeronautics and Space OFFICE OF THE SECRETARY... DISABILITY IN AIR TRAVEL Nondiscrimination and Access to Services and Information § 382.19 May...

  8. 14 CFR 382.19 - May carriers refuse to provide transportation on the basis of disability?

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 14 Aeronautics and Space 4 2014-01-01 2014-01-01 false May carriers refuse to provide transportation on the basis of disability? 382.19 Section 382.19 Aeronautics and Space OFFICE OF THE SECRETARY... DISABILITY IN AIR TRAVEL Nondiscrimination and Access to Services and Information § 382.19 May...

  9. 14 CFR 382.19 - May carriers refuse to provide transportation on the basis of disability?

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 14 Aeronautics and Space 4 2011-01-01 2011-01-01 false May carriers refuse to provide transportation on the basis of disability? 382.19 Section 382.19 Aeronautics and Space OFFICE OF THE SECRETARY... DISABILITY IN AIR TRAVEL Nondiscrimination and Access to Services and Information § 382.19 May...

  10. 14 CFR 382.19 - May carriers refuse to provide transportation on the basis of disability?

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 14 Aeronautics and Space 4 2013-01-01 2013-01-01 false May carriers refuse to provide transportation on the basis of disability? 382.19 Section 382.19 Aeronautics and Space OFFICE OF THE SECRETARY... DISABILITY IN AIR TRAVEL Nondiscrimination and Access to Services and Information § 382.19 May...

  11. 14 CFR 382.19 - May carriers refuse to provide transportation on the basis of disability?

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 14 Aeronautics and Space 4 2010-01-01 2010-01-01 false May carriers refuse to provide transportation on the basis of disability? 382.19 Section 382.19 Aeronautics and Space OFFICE OF THE SECRETARY... DISABILITY IN AIR TRAVEL Nondiscrimination and Access to Services and Information § 382.19 May...

  12. Spatial localization of excitons and charge carriers in hybrid perovskite thin films

    DOE PAGES

    Simpson, Mary Jane; Doughty, Benjamin; Yang, Bin; ...

    2015-07-21

    The fundamental photophysics underlying the remarkably high power conversion efficiency of organic-inorganic hybrid perovskite-based solar cells has been increasingly studied using complementary spectroscopic techniques. The spatially heterogeneous polycrystalline morphology of the photoactive layers owing to the presence of distinct crystalline grains has been generally neglected in optical measurements and therefore the reported results are typically averaged over hundreds or even thousands of such grains. Here, we apply femtosecond transient absorption microscopy to spatially and temporally probe ultrafast electronic excited-state dynamics in pristine methylammonium lead tri-iodide (CH3NH3PbI3) thin films and composite structures. We found that the electronic excited-state relaxation kinetics aremore » extremely sensitive to the sample location probed, which was manifested by position-dependent decay timescales and transient signals. As a result, analysis of transient absorption kinetics acquired at distinct spatial positions enabled us to identify contributions of excitons and free charge carriers.« less

  13. Spatial Localization of Excitons and Charge Carriers in Hybrid Perovskite Thin Films

    DOE PAGES

    Simpson, Mary Jane; Doughty, Benjamin L; Yang, Bin; ...

    2015-01-01

    The fundamental photophysics underlying the remarkably high power conversion efficiency of organic-inorganic hybrid perovskite-based solar cells has been increasingly studied using complementary spectroscopic techniques. However, the spatially heterogeneous polycrystalline morphology of the photoactive layers owing to the presence of distinct crystalline grains has been generally neglected in optical measurements and therefore the reported results are typically averaged over hundreds or even thousands of such grains. Here, we apply femtosecond transient absorption microscopy to spatially and temporally probe ultrafast electronic excited-state dynamics in pristine methylammonium lead tri-iodide (CH3NH3PbI3) thin films and composite structures. We found that the electronic excited-state relaxation kineticsmore » are extremely sensitive to the sample location probed, which was manifested by position-dependent decay timescales and transient signals. Analysis of transient absorption kinetics acquired at distinct spatial positions enabled us to identify contributions of excitons and free charge carriers.« less

  14. Corneal permeation properties of a charged lipid nanoparticle carrier containing dexamethasone

    PubMed Central

    Ban, Junfeng; Zhang, Yan; Huang, Xin; Deng, Guanghan; Hou, Dongzhi; Chen, Yanzhong; Lu, Zhufen

    2017-01-01

    Drug delivery carriers can maintain effective therapeutic concentrations in the eye. To this end, we developed lipid nanoparticles (L/NPs) in which the surface was modified with positively charged chitosan, which engaged in hydrogen bonding with the phospholipid membrane. We evaluated in vitro corneal permeability and release characteristics, ocular irritation, and drug dynamics of modified and unmodified L/NPs in aqueous humor. The size of L/NPs was uniform and showed a narrow distribution. Corneal permeation was altered by the presence of chitosan and was dependent on particle size; the apparent permeability coefficient of dexamethasone increased by 2.7 and 1.8 times for chitosan-modified and unmodified L/NPs, respectively. In conclusion, a chitosan-modified system could be a promising method for increasing the ocular bioavailability of unmodified L/NPs by enhancing their retention time and permeation into the cornea. These findings provide a theoretical basis for the development of effective drug delivery systems in the treatment of ocular disease. PMID:28243093

  15. Computational Confirmation of the Carrier for the "XCN" Interstellar Ice Bank: OCN(-) Charge Transfer Complexes

    NASA Technical Reports Server (NTRS)

    Park, J.-Y.; Woon, D. E.

    2004-01-01

    Recent experimental studies provide evidence that carrier for the so-called XCN feature at 2165 cm(exp -1) (4.62 micron) in young stellar objects is an OCN(-)/NH4(+) charge transfer (CT) complex that forms in energetically processed interstellar icy grain mantles. Although other RCN nitriles and RCN iosonitriles have been considered, Greenberg's conjecture that OCN(-) is associated with the XCN feature has persisted for over 15 years. In this work we report a computational investigation that thoroughly confirms the hypothesis that the XCN feature observed in laboratory studies can result from OCN(-)/NH4(+) CT complexes arising from HNCO and NH3, in a water ice environment. Density functional theory calculations with theory calculations with HNCO, NH3, and up to 12 waters reproduce seven spectroscopic measurements associated with XCN: the band origin of the asymmetric stretching mode of OCN(-), shifts due to isotopic substitutions of C, N, O, and H, and two weak features. However, very similar values are also found for the OCN(-)/NH4(+) CT complex arising from HOCN and NH3. In both cases, the complex forms by barrierless proton transfer from HNCO or HOCN to NH3 during the optimization of the solvated system. Scaled B3LYP/6-31+G** harmonic frequencies for HNCO and HOCN cases are 2181 and 2202 cm(exp -1), respectively.

  16. Thickness dependent charge transfer states and dark carriers density in vacuum deposited small molecule organic photocell

    NASA Astrophysics Data System (ADS)

    Shekhar, Himanshu; Tzabari, Lior; Solomeshch, Olga; Tessler, Nir

    2016-10-01

    We have investigated the influence of the active layer thickness on the balance of the internal mechanisms affecting the efficiency of copper phthalocyanine - fullerene (C60) based vacuum deposited bulk heterojunction organic photocell. We fabricated a range of devices for which we varied the thickness of the active layer from 40 to 120 nm and assessed their performance using optical and electrical characterization techniques. As reported previously for phthalocyanine:C60, the performance of the device is highly dependent on the active layer thickness and of all the thicknesses we tried, the 40 nm thin active layer device showed the best solar cell characteristic parameters. Using the transfer matrix based optical model, which includes interference effects, we calculated the optical power absorbed in the active layers for the entire absorption band, and we found that this cannot explain the trend with thickness. Measurement of the cell quantum efficiency as a function of light intensity showed that the relative weight of the device internal processes changes when going from 40 nm to 120 nm thick active layer. Electrical modeling of the device, which takes different internal processes into account, allowed to quantify the changes in the processes affecting the generation - recombination balance. Sub gap external quantum efficiency and morphological analysis of the surface of the films agree with the model's result. We found that as the thickness grows the density of charge transfer states and of dark carriers goes up and the uniformity in the vertical direction is reduced.

  17. Spatial localization of excitons and charge carriers in hybrid perovskite thin films

    SciTech Connect

    Simpson, Mary Jane; Doughty, Benjamin; Yang, Bin; Xiao, Kai; Ma, Ying -Zhong

    2015-07-21

    The fundamental photophysics underlying the remarkably high power conversion efficiency of organic-inorganic hybrid perovskite-based solar cells has been increasingly studied using complementary spectroscopic techniques. The spatially heterogeneous polycrystalline morphology of the photoactive layers owing to the presence of distinct crystalline grains has been generally neglected in optical measurements and therefore the reported results are typically averaged over hundreds or even thousands of such grains. Here, we apply femtosecond transient absorption microscopy to spatially and temporally probe ultrafast electronic excited-state dynamics in pristine methylammonium lead tri-iodide (CH3NH3PbI3) thin films and composite structures. We found that the electronic excited-state relaxation kinetics are extremely sensitive to the sample location probed, which was manifested by position-dependent decay timescales and transient signals. As a result, analysis of transient absorption kinetics acquired at distinct spatial positions enabled us to identify contributions of excitons and free charge carriers.

  18. Solution of a new nonlinear equation for the distribution of charge carriers in a semiconductor

    NASA Astrophysics Data System (ADS)

    Liboff, Richard L.; Schenter, Gregory K.

    1986-11-01

    The solution of a recently obtained nonlinear differential equation for the distribution function of charge carriers in a semiconductor in an electric field is derived. It is given by fSL(x)=\\{1+B[s/(x+s)]sex \\}-1. This solution represents the symmetric part of the total distribution function. The nondimensional energy and applied electric field are x and √s , respectively, and B is a constant determined by normalization. The total distribution is given by the above and its derivative and is found to be rotationally symmetric about the electric field. This distribution reduces to the shifted Fermi-Dirac distribution for small s and to the Druyvesteyn distribution in the classical limit. An analytic expression for electrical conductivity is derived together with an approximate expression for the chemical potential in the small-electric-field limit. A generalized criterion for the classical versus quantum domains is discussed relevant to the present study. It is found that otherwise quantum domains become classical for sufficiently large applied electric fields.

  19. Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs

    NASA Astrophysics Data System (ADS)

    Harrison, S.; Young, M. P.; Hodgson, P. D.; Young, R. J.; Hayne, M.; Danos, L.; Schliwa, A.; Strittmatter, A.; Lenz, A.; Eisele, H.; Pohl, U. W.; Bimberg, D.

    2016-02-01

    Charge-carrier confinement in nanoscale In-rich agglomerations within a lateral InGaAs quantum well (QW) formed from stacked submonolayers (SMLs) of InAs in GaAs is studied. Low-temperature photoluminescence (PL) and magneto-PL clearly demonstrate strong vertical and weak lateral confinement, yielding two-dimensional (2D) excitons. In contrast, high-temperature (400 K) magneto-PL reveals excited states that fit a Fock-Darwin spectrum, characteristic of a zero-dimensional (0D) system in a magnetic field. This paradox is resolved by concluding that the system is heterodimensional: the light electrons extend over several In-rich agglomerations and see only the lateral InGaAs QW, i.e., are 2D, while the heavier holes are confined within the In-rich agglomerations, i.e., are 0D. This description is supported by single-particle effective-mass and eight-band k .p calculations. We suggest that the heterodimensional nature of nanoscale SML inclusions is fundamental to the ability of respective optoelectronic devices to operate efficiently and at high speed.

  20. Dopant effects on charge transport to enhance performance of phosphorescent white organic light emitting diodes

    SciTech Connect

    Zhu, Liping; Chen, Jiangshan; Ma, Dongge

    2015-11-07

    We compared the performance of phosphorescent white organic light emitting diodes (WOLEDs) with red-blue-green and green-blue-red sequent emissive layers. It was found that the influence of red and green dopants on electron and hole transport in emissive layers leads to the large difference in the efficiency of fabricated WOLEDs. This improvement mechanism is well investigated by the current density-voltage characteristics of single-carrier devices based on dopant doped emissive layers and the comparison of electroluminescent and photoluminescence spectra, and attributed to the different change of charge carrier transport by the dopants. The optimized device achieves a maximum power efficiency, current efficiency, and external quantum efficiency of 37.0 lm/W, 38.7 cd/A, and 17.7%, respectively, which are only reduced to 32.8 lm/W, 38.5 cd/A, and 17.3% at 1000 cd/m{sup 2} luminance. The critical current density is as high as 210 mA/cm{sup 2}. It can be seen that the efficiency roll-off in phosphorescent WOLEDs can be well improved by effectively designing the structure of emissive layers.

  1. Stable All-Organic Radicals with Ambipolar Charge Transport.

    PubMed

    Reig, Marta; Gozálvez, Cristian; Jankauskas, Vygintas; Gaidelis, Valentas; Grazulevicius, Juozas V; Fajarí, Lluís; Juliá, Luis; Velasco, Dolores

    2016-12-19

    A series of neutral long-lived purely organic radicals based on the stable [4-(N-carbazolyl)-2,6-dichlorophenyl]bis(2,4,6-trichlorophenyl)methyl radical adduct (Cbz-TTM) is reported herein. All compounds exhibit ambipolar charge-transport properties under ambient conditions owing to their radical character. High electron and hole mobilities up to 10(-2) and 10(-3)  cm(2)  V(-1)  s(-1) , respectively, were achieved. Xerographic single-layered photoreceptors were fabricated from the radicals studied herein, exhibiting good xerographic photosensitivity across the visible spectrum.

  2. Acoustic charge transport technology investigation for advanced development transponder

    NASA Technical Reports Server (NTRS)

    Kayalar, S.

    1993-01-01

    Acoustic charge transport (ACT) technology has provided a basis for a new family of analog signal processors, including a programmable transversal filter (PTF). Through monolithic integration of ACT delay lines with GaAs metal semiconductor field effect transistor (MESFET) digital memory and controllers, these devices significantly extend the performance of PTF's. This article introduces the basic operation of these devices and summarizes their present and future specifications. The production and testing of these devices indicate that this new technology is a promising one for future space applications.

  3. Charge transport in nanoscale vertical organic semiconductor pillar devices

    PubMed Central

    Wilbers, Janine G. E.; Xu, Bojian; Bobbert, Peter A.; de Jong, Michel P.; van der Wiel, Wilfred G.

    2017-01-01

    We report charge transport measurements in nanoscale vertical pillar structures incorporating ultrathin layers of the organic semiconductor poly(3-hexylthiophene) (P3HT). P3HT layers with thickness down to 5 nm are gently top-contacted using wedging transfer, yielding highly reproducible, robust nanoscale junctions carrying high current densities (up to 106 A/m2). Current-voltage data modeling demonstrates excellent hole injection. This work opens up the pathway towards nanoscale, ultrashort-channel organic transistors for high-frequency and high-current-density operation. PMID:28117371

  4. Charge transport studies of proton and ion conducting materials

    NASA Astrophysics Data System (ADS)

    Versek, Craig Wm

    The development of a high-throughput impedance spectroscopy instrumentation platform for conductivity characterization of ion transport materials is outlined. Collaborative studies using this system are summarized. Charge conduction mechanisms and conductivity data for small molecule proton conducting liquids, pyrazole, imidazole, 1,2,3-triazole, 1,2,4-triazole, and select mixtures of these compounds are documented. Furthermore, proton diffusivity measurements using a Pulse Field Gradient Nuclear Magnetic Resonance (PFG NMR) technique for imidazole and 1,2,3-triazole binary mixtures are compared. Studies of azole functionalized discotic and linear mesogens with conductivity, structural, and thermal characterizations are detailed.

  5. Complete ultrafast charge carrier dynamics in photo-excited all-inorganic perovskite nanocrystals (CsPbX3).

    PubMed

    Mondal, Navendu; Samanta, Anunay

    2017-02-02

    Understanding the nature and dynamics of the photo-induced transients of all-inorganic perovskite nanocrystals (NCs) is key to their exploitation in potential applications. In order to determine the nature of charge carriers, their deactivation pathways and dynamics, the photo-induced transients of CsPbBr3, CsPbBr2I, CsPbBr1.5I1.5 and CsPbI3 NCs are spectrally and temporally characterized employing a combination of femtosecond transient absorption (TA) and photoluminescence (PL) up-conversion techniques and global analysis of the data. The results provide distinct identities of the excitons and free charge carriers and distinguish the hot charge carriers from the cold ones. The carrier trapping is attributed to the electrons and their dynamics is unaffected in mixed halide perovskites. The excitation energy dependence of the TA dynamics suggests that the trap states are shallow in nature and mainly limited near the band-edge level. In mixed halide perovskites, an increase in the iodine content leads to hole trapping in a short time scale (<5 ps). The insights obtained from this study are likely to be helpful for tuning the photo-response of these substances and their better utilization in light-based applications.

  6. Microscopic observation of carrier-transport dynamics in quantum-structure solar cells using a time-of-flight technique

    SciTech Connect

    Toprasertpong, Kasidit; Fujii, Hiromasa; Sugiyama, Masakazu; Nakano, Yoshiaki; Kasamatsu, Naofumi; Kada, Tomoyuki; Asahi, Shigeo; Kita, Takashi; Wang, Yunpeng; Watanabe, Kentaroh

    2015-07-27

    In this study, we propose a carrier time-of-flight technique to evaluate the carrier transport time across a quantum structure in an active region of solar cells. By observing the time-resolved photoluminescence signal with a quantum-well probe inserted under the quantum structure at forward bias, the carrier transport time can be efficiently determined at room temperature. The averaged drift velocity shows linear dependence on the internal field, allowing us to estimate the quantum structure as a quasi-bulk material with low effective mobility containing the information of carrier dynamics. We show that this direct and real-time observation is more sensitive to carrier transport than other conventional techniques, providing better insights into microscopic carrier transport dynamics to overcome a device design difficulty.

  7. Kinetics of optically excited charge carriers at the GaN surface: Influence of catalytic Pt nanostructures

    SciTech Connect

    Winnerl, Andrea Pereira, Rui N.; Stutzmann, Martin

    2015-10-21

    In this work, we use GaN with different deposited Pt nanostructures as a controllable model system to investigate the kinetics of photo-generated charge carriers in hybrid photocatalysts. We combine conductance and contact potential difference measurements to investigate the influence of Pt on the processes involved in the capture and decay of photo-generated charge carriers at and close to the GaN surface. We found that in the presence of Pt nanostructures the photo-excitation processes are similar to those found in Pt free GaN. However, in GaN with Pt nanostructures, photo-generated holes are preferentially trapped in surface states of the GaN covered with Pt and/or in electronic states of the Pt and lead to an accumulation of positive charge there, whereas negative charge is accumulated in localized states in a shallow defect band of the GaN covered with Pt. This preferential accumulation of photo-generated electrons close to the surface is responsible for a dramatic acceleration of the turn-off charge transfer kinetics and a stronger dependence of the surface photovoltage on light intensity when compared to a Pt free GaN surface. Our study shows that in hybrid photocatalysts, the metal nanostructures induce a spatially inhomogeneous surface band bending of the semiconductor that promotes a lateral drift of photogenerated charges towards the catalytic nanostructures.

  8. Effect of charge trapping on effective carrier lifetime in compound semiconductors: High resistivity CdZnTe

    SciTech Connect

    Kamieniecki, Emil

    2014-11-21

    The dominant problem limiting the energy resolution of compound semiconductor based radiation detectors is the trapping of charge carriers. The charge trapping affects energy resolution through the carrier lifetime more than through the mobility. Conventionally, the effective carrier lifetime is determined using a 2-step process based on measurement of the mobility-lifetime product (μτ) and determining drift mobility using time-of-flight measurements. This approach requires fabrication of contacts on the sample. A new RF-based pulse rise-time method, which replaces this 2-step process with a single non-contact direct measurement, is discussed. The application of the RF method is illustrated with high-resistivity detector-grade CdZnTe crystals. The carrier lifetime in the measured CdZnTe, depending on the quality of the crystals, was between about 5 μs and 8 μs. These values are in good agreement with the results obtained using conventional 2-step approach. While the effective carrier lifetime determined from the initial portion of the photoresponse transient combines both recombination and trapping in a manner similar to the conventional 2-step approach, both the conventional and the non-contact RF methods offer only indirect evaluation of the effect of charge trapping in the semiconductors used in radiation detectors. Since degradation of detector resolution is associated not with trapping but essentially with detrapping of carriers, and, in particular, detrapping of holes in n-type semiconductors, it is concluded that evaluation of recombination and detrapping during photoresponse decay is better suited for evaluation of compound semiconductors used in radiation detectors. Furthermore, based on previously reported data, it is concluded that photoresponse decay in high resistivity CdZnTe at room temperature is dominated by detrapping of carriers from the states associated with one type of point defect and by recombination of carriers at one type of

  9. Remarkable enhancement of charge carrier mobility of conjugated polymer field-effect transistors upon incorporating an ionic additive.

    PubMed

    Luo, Hewei; Yu, Chenmin; Liu, Zitong; Zhang, Guanxin; Geng, Hua; Yi, Yuanping; Broch, Katharina; Hu, Yuanyuan; Sadhanala, Aditya; Jiang, Lang; Qi, Penglin; Cai, Zhengxu; Sirringhaus, Henning; Zhang, Deqing

    2016-05-01

    Organic semiconductors with high charge carrier mobilities are crucial for flexible electronic applications. Apart from designing new conjugated frameworks, different strategies have been explored to increase charge carrier mobilities. We report a new and simple approach to enhancing the charge carrier mobility of DPP-thieno[3,2-b]thiophene-conjugated polymer by incorporating an ionic additive, tetramethylammonium iodide, without extra treatments into the polymer. The resulting thin films exhibit a very high hole mobility, which is higher by a factor of 24 than that of thin films without the ionic additive under the same conditions. On the basis of spectroscopic grazing incidence wide-angle x-ray scattering and atomic force microscopy studies as well as theoretical calculations, the remarkable enhancement of charge mobility upon addition of tetramethylammonium iodide is attributed primarily to an inhibition of the torsion of the alkyl side chains by the presence of the ionic species, facilitating a more ordered lamellar packing of the alkyl side chains and interchain π-π interactions.

  10. Remarkable enhancement of charge carrier mobility of conjugated polymer field-effect transistors upon incorporating an ionic additive

    PubMed Central

    Luo, Hewei; Yu, Chenmin; Liu, Zitong; Zhang, Guanxin; Geng, Hua; Yi, Yuanping; Broch, Katharina; Hu, Yuanyuan; Sadhanala, Aditya; Jiang, Lang; Qi, Penglin; Cai, Zhengxu; Sirringhaus, Henning; Zhang, Deqing

    2016-01-01

    Organic semiconductors with high charge carrier mobilities are crucial for flexible electronic applications. Apart from designing new conjugated frameworks, different strategies have been explored to increase charge carrier mobilities. We report a new and simple approach to enhancing the charge carrier mobility of DPP-thieno[3,2-b]thiophene–conjugated polymer by incorporating an ionic additive, tetramethylammonium iodide, without extra treatments into the polymer. The resulting thin films exhibit a very high hole mobility, which is higher by a factor of 24 than that of thin films without the ionic additive under the same conditions. On the basis of spectroscopic grazing incidence wide-angle x-ray scattering and atomic force microscopy studies as well as theoretical calculations, the remarkable enhancement of charge mobility upon addition of tetramethylammonium iodide is attributed primarily to an inhibition of the torsion of the alkyl side chains by the presence of the ionic species, facilitating a more ordered lamellar packing of the alkyl side chains and interchain π-π interactions. PMID:27386541

  11. 41 CFR 302-10.402 - What costs must we pay a commercial carrier for transporting a mobile home?

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 41 Public Contracts and Property Management 4 2012-07-01 2012-07-01 false What costs must we pay a commercial carrier for transporting a mobile home? 302-10.402 Section 302-10.402 Public Contracts and... Responsibilities § 302-10.402 What costs must we pay a commercial carrier for transporting a mobile home? The...

  12. 41 CFR 302-10.402 - What costs must we pay a commercial carrier for transporting a mobile home?

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 41 Public Contracts and Property Management 4 2013-07-01 2012-07-01 true What costs must we pay a commercial carrier for transporting a mobile home? 302-10.402 Section 302-10.402 Public Contracts and... Responsibilities § 302-10.402 What costs must we pay a commercial carrier for transporting a mobile home? The...

  13. Transport of 3D space charge dominated beams

    NASA Astrophysics Data System (ADS)

    Lü, Jian-Qin

    2013-10-01

    In this paper we present the theoretical analysis and the computer code design for the intense pulsed beam transport. Intense beam dynamics is a very important issue in low-energy high-current accelerators and beam transport systems. This problem affects beam transmission and beam qualities. Therefore, it attracts the attention of the accelerator physicists worldwide. The analysis and calculation for the intense beam dynamics are very complicated, because the state of particle motion is dominated not only by the applied electromagnetic fields, but also by the beam-induced electromagnetic fields (self-fields). Moreover, the self fields are related to the beam dimensions and particle distributions. So, it is very difficult to get the self-consistent solutions of particle motion analytically. For this reason, we combine the Lie algebraic method and the particle in cell (PIC) scheme together to simulate intense 3D beam transport. With the Lie algebraic method we analyze the particle nonlinear trajectories in the applied electromagnetic fields up to third order approximation, and with the PIC algorithm we calculate the space charge effects to the particle motion. Based on the theoretical analysis, we have developed a computer code, which calculates beam transport systems consisting of electrostatic lenses, electrostatic accelerating columns, solenoid lenses, magnetic and electric quadruples, magnetic sextupoles, octopuses and different kinds of electromagnetic analyzers. The optimization calculations and the graphic display for the calculated results are provided by the code.

  14. Advantages of admittance spectroscopy over time-of-flight technique for studying dispersive charge transport in an organic semiconductor

    NASA Astrophysics Data System (ADS)

    Tsung, K. K.; So, S. K.

    2009-10-01

    We show that admittance spectroscopy (AS) is a better technique than time of flight (TOF) to study the charge transport properties in dispersive materials. The hole transport properties of N ,N'-diphenyl-N ,N'-bis(1-naphthyl)(1,1'-biphenyl)-4,4'-diamine (NPB) doped with different traps were evaluated by AS and TOF techniques. It was found that both techniques can show clear signals for measuring the mobility of NPB doped with shallow traps. When NPB was doped with deep traps, the AS signals were still clear for mobility extraction. In sharp contrast, the TOF transients become featureless and the carrier transit time cannot be determined. The validity of AS in mobility determination was demonstrated by comparing the extracted AS to TOF mobilities. Generally, the hole mobilities extracted by these two techniques were in excellent agreement. In addition, we will demonstrate that AS can be employed to measure carrier dispersion.

  15. Two-carrier analyses of the transport properties of black phosphorus under pressure

    NASA Astrophysics Data System (ADS)

    Akiba, Kazuto; Miyake, Atsushi; Akahama, Yuichi; Matsubayashi, Kazuyuki; Uwatoko, Yoshiya; Tokunaga, Masashi

    2017-03-01

    We report on the electronic transport properties of black phosphorus and analyze them using a two-carrier model in a wide range of pressure up to 2.5 GPa. In a semiconducting state at 0.29 GPa, the remarkable nonlinear behavior in the Hall resistance is reasonably reproduced by assuming the coexistence of two kinds of holes with different densities and mobilities. On the other hand, two-carrier analyses of the magnetotransport properties above 1.01 GPa suggest the coexistence of high-mobility electron and hole carriers that have almost the same densities, i.e., nearly compensated semimetallic nature of black phosphorus. In the semimetallic state, analyses of both the two-carrier model and quantum oscillations indicate a systematic increase in the carrier densities as pressure increases. An observed sign inversion of Hall resistivity at low magnetic fields suggests the existence of high-mobility electrons (˜105cm2V-1s-1 ), which is roughly ten times larger than that of holes, in the semimetallic black phosphorus. We conclude that the extremely large positive magnetoresistance that has been observed in the semimetallic state cannot be reproduced by a conventional two-carrier model.

  16. Polarized recombination of acoustically transported carriers in GaAs nanowires

    PubMed Central

    2012-01-01

    The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited electrons and holes in GaAs nanowires deposited on a SAW delay line on a LiNbO3 crystal. The carriers generated in the nanowire by a focused light spot are acoustically transferred to a second location where they recombine. We show that the recombination of the transported carriers occurs in a zinc blende section on top of the predominant wurtzite nanowire. This allows contactless control of the linear polarized emission by SAWs which is governed by the crystal structure. Additional polarization-resolved photoluminescence measurements were performed to investigate spin conservation during transport. PMID:22583747

  17. Efficient, non-toxic anion transport by synthetic carriers in cells and epithelia

    NASA Astrophysics Data System (ADS)

    Li, Hongyu; Valkenier, Hennie; Judd, Luke W.; Brotherhood, Peter R.; Hussain, Sabir; Cooper, James A.; Jurček, Ondřej; Sparkes, Hazel A.; Sheppard, David N.; Davis, Anthony P.

    2016-01-01

    Transmembrane anion transporters (anionophores) have potential for new modes of biological activity, including therapeutic applications. In particular they might replace the activity of defective anion channels in conditions such as cystic fibrosis. However, data on the biological effects of anionophores are scarce, and it remains uncertain whether such molecules are fundamentally toxic. Here, we report a biological study of an extensive series of powerful anion carriers. Fifteen anionophores were assayed in single cells by monitoring anion transport in real time through fluorescence emission from halide-sensitive yellow fluorescent protein. A bis-(p-nitrophenyl)ureidodecalin shows especially promising activity, including deliverability, potency and persistence. Electrophysiological tests show strong effects in epithelia, close to those of natural anion channels. Toxicity assays yield negative results in three cell lines, suggesting that promotion of anion transport may not be deleterious to cells. We therefore conclude that synthetic anion carriers are realistic candidates for further investigation as treatments for cystic fibrosis.

  18. Quantum charge transport and conformational dynamics of macromolecules.

    PubMed

    Boninsegna, L; Faccioli, P

    2012-06-07

    We study the dynamics of quantum excitations inside macromolecules which can undergo conformational transitions. In the first part of the paper, we use the path integral formalism to rigorously derive a set of coupled equations of motion which simultaneously describe the molecular and quantum transport dynamics, and obey the fluctuation/dissipation relationship. We also introduce an algorithm which yields the most probable molecular and quantum transport pathways in rare, thermally activated reactions. In the second part of the paper, we apply this formalism to simulate the propagation of a quantum charge during the collapse of a polymer from an initial stretched conformation to a final globular state. We find that the charge dynamics is quenched when the chain reaches a molten globule state. Using random matrix theory we show that this transition is due to an increase of quantum localization driven by dynamical disorder. We argue that collapsing conducting polymers may represent a physical realization of quantum small-world networks with dynamical rewiring probability.

  19. Controlling polymer translocation and ion transport via charge correlations.

    PubMed

    Buyukdagli, Sahin; Ala-Nissila, T

    2014-11-04

    We develop a correlation-corrected transport theory in order to predict ionic and polymer transport properties of membrane nanopores under physical conditions where mean-field electrostatics breaks down. The experimentally observed low KCl conductivity of open α-hemolysin pores is quantitatively explained by the presence of surface polarization effects. Upon the penetration of a DNA molecule into the pore, these polarization forces combined with the electroneutrality of DNA sets a lower boundary for the ionic current, explaining the weak salt dependence of blocked pore conductivities at dilute ion concentrations. The addition of multivalent counterions to the solution results in the reversal of the polymer charge and the direction of the electroosmotic flow. With trivalent spermidine or quadrivalent spermine molecules, the charge inversion is strong enough to stop the translocation of the polymer and to reverse its motion. This mechanism can be used efficiently in translocation experiments in order to improve the accuracy of DNA sequencing by minimizing the translocation velocity of the polymer.

  20. DNA-mediated charge transport for DNA repair

    PubMed Central

    Boon, Elizabeth M.; Livingston, Alison L.; Chmiel, Nikolas H.; David, Sheila S.; Barton, Jacqueline K.

    2003-01-01

    MutY, like many DNA base excision repair enzymes, contains a [4Fe4S]2+ cluster of undetermined function. Electrochemical studies of MutY bound to a DNA-modified gold electrode demonstrate that the [4Fe4S] cluster of MutY can be accessed in a DNA-mediated redox reaction. Although not detectable without DNA, the redox potential of DNA-bound MutY is ≈275 mV versus NHE, which is characteristic of HiPiP iron proteins. Binding to DNA is thus associated with a change in [4Fe4S]3+/2+ potential, activating the cluster toward oxidation. Given that DNA charge transport chemistry is exquisitely sensitive to perturbations in base pair structure, such as mismatches, we propose that this redox process of MutY bound to DNA exploits DNA charge transport and provides a DNA signaling mechanism to scan for mismatches and lesions in vivo. PMID:14559969

  1. Light-Induced Charge Transport within a Single Asymmetric Nanowire

    SciTech Connect

    Liu, Chong; Hwang, Yun Yeong; Jeong, Hoon Eui; Yang, Peidong

    2011-01-21

    Artificial photosynthetic systems using semiconductor materials have been explored for more than three decades in order to store solar energy in chemical fuels such as hydrogen. By mimicking biological photosynthesis with two light-absorbing centers that relay excited electrons in a nanoscopic space, a dual-band gap photoelectrochemical (PEC) system is expected to have higher theoretical energy conversion efficiency than a single band gap system. This work demonstrates the vectorial charge transport of photo-generated electrons and holes within a single asymmetric Si/TiO2 nanowire using Kelvin probe force microscopy (KPFM). Under UV illumination, higher surface potential was observed on the n-TiO₂ side, relative to the potential of the p-Si side, as a result of majority carriers’ recombination at the Si/TiO₂ interface. These results demonstrate a new approach to investigate charge separation and transport in a PEC system. This asymmetric nanowire heterostructure, with a dual band gap configuration and simultaneously exposed anode and cathode surfaces represents an ideal platform for the development of technologies for the generation of solar fuels, although better photoanode materials remain to be discovered.

  2. TFG clusters COPII-coated transport carriers and promotes early secretory pathway organization.

    PubMed

    Johnson, Adam; Bhattacharya, Nilakshee; Hanna, Michael; Pennington, Janice G; Schuh, Amber L; Wang, Lei; Otegui, Marisa S; Stagg, Scott M; Audhya, Anjon

    2015-03-12

    In mammalian cells, cargo-laden secretory vesicles leave the endoplasmic reticulum (ER) en route to ER-Golgi intermediate compartments (ERGIC) in a manner dependent on the COPII coat complex. We report here that COPII-coated transport carriers traverse a submicron, TFG (Trk-fused gene)-enriched zone at the ER/ERGIC interface. The architecture of TFG complexes as determined by three-dimensional electron microscopy reveals the formation of flexible, octameric cup-like structures, which are able to self-associate to generate larger polymers in vitro. In cells, loss of TFG function dramatically slows protein export from the ER and results in the accumulation of COPII-coated carriers throughout the cytoplasm. Additionally, the tight association between ER and ERGIC membranes is lost in the absence of TFG. We propose that TFG functions at the ER/ERGIC interface to locally concentrate COPII-coated transport carriers and link exit sites on the ER to ERGIC membranes. Our findings provide a new mechanism by which COPII-coated carriers are retained near their site of formation to facilitate rapid fusion with neighboring ERGIC membranes upon uncoating, thereby promoting interorganellar cargo transport.

  3. Simulating charge transport to understand the spectral response of Swept Charge Devices

    NASA Astrophysics Data System (ADS)

    Athiray, P. S.; Sreekumar, P.; Narendranath, S.; Gow, J. P. D.

    2015-11-01

    Context. Swept Charge Devices (SCD) are novel X-ray detectors optimized for improved spectral performance without any demand for active cooling. The Chandrayaan-1 X-ray Spectrometer (C1XS) experiment onboard the Chandrayaan-1 spacecraft used an array of SCDs to map the global surface elemental abundances on the Moon using the X-ray fluorescence (XRF) technique. The successful demonstration of SCDs in C1XS spurred an enhanced version of the spectrometer on Chandrayaan-2 using the next-generation SCD sensors. Aims: The objective of this paper is to demonstrate validation of a physical model developed to simulate X-ray photon interaction and charge transportation in a SCD. The model helps to understand and identify the origin of individual components that collectively contribute to the energy-dependent spectral response of the SCD. Furthermore, the model provides completeness to various calibration tasks, such as generating spectral matrices (RMFs - redistribution matrix files), estimating efficiency, optimizing event selection logic, and maximizing event recovery to improve photon-collection efficiency in SCDs. Methods: Charge generation and transportation in the SCD at different layers related to channel stops, field zones, and field-free zones due to photon interaction were computed using standard drift and diffusion equations. Charge collected in the buried channel due to photon interaction in different volumes of the detector was computed by assuming a Gaussian radial profile of the charge cloud. The collected charge was processed further to simulate both diagonal clocking read-out, which is a novel design exclusive for SCDs, and event selection logic to construct the energy spectrum. Results: We compare simulation results of the SCD CCD54 with measurements obtained during the ground calibration of C1XS and clearly demonstrate that our model reproduces all the major spectral features seen in calibration data. We also describe our understanding of interactions at

  4. The Effect of Correlated Energetic Disorder on Charge Transport in Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Allen, Jonathan; Röding, Sebastian; Cherqui, Charles; Dunlap, David

    2012-10-01

    In their 1995 paper describing a Monte Carlo simulation for dissociation of an electron-hole pair in the presence of Gaussian energetic disorder, Albrect and Bäassler reported a surprising result. They found that increasing the width σ of the energetic disorder increases the quantum yield φ. They attributed this behavior to the tendency for energy fluctuations to compete against the Coulombic pair attraction, driving the electron-hole pair apart at short distances where, without disorder, recombination would be almost certain. We have expanded upon this notion, and introduced spatial correlation into the energetic disorder. By correlating the energetic disorder, we have demonstrated even larger quantum yields in simulation, attributable to the tendency of correlation to drive the charges further apart spatially than merely random disorder. Our results generally support the findings of Greenham et al. in that a larger correlation radius gives a larger quantum yield. In addition to larger quantum yield, we believe that correlated disorder could be used to create pathways for charge transport within a material, allowing the charge carrier behavior to be tuned.

  5. Charge Transport in Two-Photon Semiconducting Structures for Solar Fuels.

    PubMed

    Liu, Guohua; Du, Kang; Haussener, Sophia; Wang, Kaiying

    2016-10-20

    Semiconducting heterostructures are emerging as promising light absorbers and offer effective electron-hole separation to drive solar chemistry. This technology relies on semiconductor composites or photoelectrodes that work in the presence of a redox mediator and that create cascade junctions to promote surface catalytic reactions. Rational tuning of their structures and compositions is crucial to fully exploit their functionality. In this review, we describe the possibilities of applying the two-photon concept to the field of solar fuels. A wide range of strategies including the indirect combination of two semiconductors by a redox couple, direct coupling of two semiconductors, multicomponent structures with a conductive mediator, related photoelectrodes, as well as two-photon cells are discussed for light energy harvesting and charge transport. Examples of charge extraction models from the literature are summarized to understand the mechanism of interfacial carrier dynamics and to rationalize experimental observations. We focus on a working principle of the constituent components and linking the photosynthetic activity with the proposed models. This work gives a new perspective on artificial photosynthesis by taking simultaneous advantages of photon absorption and charge transfer, outlining an encouraging roadmap towards solar fuels.

  6. Simultaneous enhancements in photon absorption and charge transport of bismuth vanadate photoanodes for solar water splitting

    NASA Astrophysics Data System (ADS)

    Kim, Tae Woo; Ping, Yuan; Galli, Giulia A.; Choi, Kyoung-Shin

    2015-10-01

    n-Type bismuth vanadate has been identified as one of the most promising photoanodes for use in a water-splitting photoelectrochemical cell. The major limitation of BiVO4 is its relatively wide bandgap (~2.5 eV), which fundamentally limits its solar-to-hydrogen conversion efficiency. Here we show that annealing nanoporous bismuth vanadate electrodes at 350 °C under nitrogen flow can result in nitrogen doping and generation of oxygen vacancies. This gentle nitrogen treatment not only effectively reduces the bandgap by ~0.2 eV but also increases the majority carrier density and mobility, enhancing electron-hole separation. The effect of nitrogen incorporation and oxygen vacancies on the electronic band structure and charge transport of bismuth vanadate are systematically elucidated by ab initio calculations. Owing to simultaneous enhancements in photon absorption and charge transport, the applied bias photon-to-current efficiency of nitrogen-treated BiVO4 for solar water splitting exceeds 2%, a record for a single oxide photon absorber, to the best of our knowledge.

  7. Simultaneous enhancements in photon absorption and charge transport of bismuth vanadate photoanodes for solar water splitting.

    PubMed

    Kim, Tae Woo; Ping, Yuan; Galli, Giulia A; Choi, Kyoung-Shin

    2015-10-26

    n-Type bismuth vanadate has been identified as one of the most promising photoanodes for use in a water-splitting photoelectrochemical cell. The major limitation of BiVO4 is its relatively wide bandgap (∼2.5 eV), which fundamentally limits its solar-to-hydrogen conversion efficiency. Here we show that annealing nanoporous bismuth vanadate electrodes at 350 °C under nitrogen flow can result in nitrogen doping and generation of oxygen vacancies. This gentle nitrogen treatment not only effectively reduces the bandgap by ∼0.2 eV but also increases the majority carrier density and mobility, enhancing electron-hole separation. The effect of nitrogen incorporation and oxygen vacancies on the electronic band structure and charge transport of bismuth vanadate are systematically elucidated by ab initio calculations. Owing to simultaneous enhancements in photon absorption and charge transport, the applied bias photon-to-current efficiency of nitrogen-treated BiVO4 for solar water splitting exceeds 2%, a record for a single oxide photon absorber, to the best of our knowledge.

  8. Simultaneous enhancements in photon absorption and charge transport of bismuth vanadate photoanodes for solar water splitting

    PubMed Central

    Kim, Tae Woo; Ping, Yuan; Galli, Giulia A.; Choi, Kyoung-Shin

    2015-01-01

    n-Type bismuth vanadate has been identified as one of the most promising photoanodes for use in a water-splitting photoelectrochemical cell. The major limitation of BiVO4 is its relatively wide bandgap (∼2.5 eV), which fundamentally limits its solar-to-hydrogen conversion efficiency. Here we show that annealing nanoporous bismuth vanadate electrodes at 350 °C under nitrogen flow can result in nitrogen doping and generation of oxygen vacancies. This gentle nitrogen treatment not only effectively reduces the bandgap by ∼0.2 eV but also increases the majority carrier density and mobility, enhancing electron–hole separation. The effect of nitrogen incorporation and oxygen vacancies on the electronic band structure and charge transport of bismuth vanadate are systematically elucidated by ab initio calculations. Owing to simultaneous enhancements in photon absorption and charge transport, the applied bias photon-to-current efficiency of nitrogen-treated BiVO4 for solar water splitting exceeds 2%, a record for a single oxide photon absorber, to the best of our knowledge. PMID:26498984

  9. Carrier-mediated system for transport of biotin in rat intestine in vitro

    SciTech Connect

    Said, H.M.; Redha, R.

    1987-01-01

    Transport of biotin was examined in rat intestine using the everted sac technique. Transport of 0.1 ..mu..M biotin was linear with time for at least 30 min of incubation and occurred at a rate 3.7 pmol g initial tissue wet wt/sup -1/ min/sup -1/. Transport of biotin was higher in the jejunum than the ileum and was minimum in the colon (85 +/- 6, 36 +/- 6, and 2.8 +/- 0.6 pmol x g initial tissue wet wt/sup -1/ x 25 min/sup -1/, respectively). In the jejunum, transport of biotin was saturable at low concentrations but linear at higher concentrations. The transport of low concentrations of biotin was 1) inhibited by structural analogues (desthiobiotin, biotin methyl ester, diaminobiotin, and biocytin), 2) Na/sup +/ dependent, 3) energy dependent, 4) temperature dependent, and 5) proceeded against a concentration gradient in the serosal compartment. No metabolic alteration occurs to the biotin molecule during transport. This study demonstrates that biotin transport in rat intestine occurs by a carrier-mediated process at low concentrations and by simple diffusion at high concentrations. Furthermore, the carrier-mediated process is Na/sup +/, energy, and temperature dependent.

  10. Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β -gallium oxide single crystals

    NASA Astrophysics Data System (ADS)

    Schubert, M.; Korlacki, R.; Knight, S.; Hofmann, T.; Schöche, S.; Darakchieva, V.; Janzén, E.; Monemar, B.; Gogova, D.; Thieu, Q.-T.; Togashi, R.; Murakami, H.; Kumagai, Y.; Goto, K.; Kuramata, A.; Yamakoshi, S.; Higashiwaki, M.

    2016-03-01

    We derive a dielectric function tensor model approach to render the optical response of monoclinic and triclinic symmetry materials with multiple uncoupled infrared and far-infrared active modes. We apply our model approach to monoclinic β -Ga2O3 single-crystal samples. Surfaces cut under different angles from a bulk crystal, (010) and (2 ¯01 ), are investigated by generalized spectroscopic ellipsometry within infrared and far-infrared spectral regions. We determine the frequency dependence of 4 independent β -Ga2O3 Cartesian dielectric function tensor elements by matching large sets of experimental data using a point-by-point data inversion approach. From matching our monoclinic model to the obtained 4 dielectric function tensor components, we determine all infrared and far-infrared active transverse optic phonon modes with Au and Bu symmetry, and their eigenvectors within the monoclinic lattice. We find excellent agreement between our model results and results of density functional theory calculations. We derive and discuss the frequencies of longitudinal optical phonons in β -Ga2O3 . We derive and report density and anisotropic mobility parameters of the free charge carriers within the tin-doped crystals. We discuss the occurrence of longitudinal phonon plasmon coupled modes in β -Ga2O3 and provide their frequencies and eigenvectors. We also discuss and present monoclinic dielectric constants for static electric fields and frequencies above the reststrahlen range, and we provide a generalization of the Lyddane-Sachs-Teller relation for monoclinic lattices with infrared and far-infrared active modes. We find that the generalized Lyddane-Sachs-Teller relation is fulfilled excellently for β -Ga2O3 .

  11. Mechanistic insights into the photoinduced charge carrier dynamics of BiOBr/CdS nanosheet heterojunctions for photovoltaic application.

    PubMed

    Jia, Huimin; Zhang, Beibei; He, Weiwei; Xiang, Yong; Zheng, Zhi

    2017-03-02

    The rational design of high performance hetero-structure photovoltaic devices requires a full understanding of the photoinduced charge transfer mechanism and kinetics at the interface of heterojunctions. In this paper, we intelligently fabricated p-BiOBr/n-CdS heterojunctions with perfect nanosheet arrays by using a facile successive ionic layer adsorption and reaction and chemical bath deposition methods at low temperature. A BiOBr/CdS heterojunction based solar cell has been fabricated which exhibited enhanced photovoltaic responses. Assisted by the surface photovoltage (SPV), transient photovoltage (TPV) and Kelvin probe technique, the photoinduced charge transfer dynamics on the BiOBr nanosheet and p-BiOBr/n-CdS interface were systematically investigated. It was found that the BiOBr/CdS nanosheet array heterojunctions were more efficient in facilitating charge carrier separation than both bare BiOBr and CdS films. The mechanism underlying the photoinduced charge carrier transfer behaviour was unravelled by allying the energy band of BiOBr/CdS p-n junctions from both the interfacial electric field and surface electric field. In addition, the CdS loading thickness in the p-BiOBr/n-CdS heterojunction and the incident wavelength affected greatly the transfer behavior of photoinduced charges, which was of great value for design of photovoltaic devices.

  12. Influence of the Si/SiO2 interface on the charge carrier density of Si nanowires

    NASA Astrophysics Data System (ADS)

    Schmidt, V.; Senz, S.; Gösele, U.

    2007-02-01

    The electrical properties of Si nanowires covered by a SiO2 shell are influenced by the properties of the Si/SiO2 interface. This interface can be characterized by the fixed oxide charge density Qf and the interface trap level density Dit. We derive expressions for the effective charge carrier density in silicon nanowires as a function of Qf, Dit, the nanowire radius, and the dopant density. It is found that a nanowire is fully depleted when its radius is smaller than a critical radius acrit. An analytic expression for acrit is derived.

  13. Negative differential mobility for negative carriers as revealed by space charge measurements on crosslinked polyethylene insulated model cables

    NASA Astrophysics Data System (ADS)

    Teyssedre, G.; Vu, T. T. N.; Laurent, C.

    2015-12-01

    Among features observed in polyethylene materials under relatively high field, space charge packets, consisting in a pulse of net charge that remains in the form of a pulse as it crosses the insulation, are repeatedly observed but without complete theory explaining their formation and propagation. Positive charge packets are more often reported, and the models based on negative differential mobility(NDM) for the transport of holes could account for some charge packets phenomenology. Conversely, NDM for electrons transport has never been reported so far. The present contribution reports space charge measurements by pulsed electroacoustic method on miniature cables that are model of HVDC cables. The measurements were realized at room temperature or with a temperature gradient of 10 °C through the insulation under DC fields on the order 30-60 kV/mm. Space charge results reveal systematic occurrence of a negative front of charges generated at the inner electrode that moves toward the outer electrode at the beginning of the polarization step. It is observed that the transit time of the front of negative charge increases, and therefore the mobility decreases, with the applied voltage. Further, the estimated mobility, in the range 10-14-10-13 m2 V-1 s-1 for the present results, increases when the temperature increases for the same condition of applied voltage. The features substantiate the hypothesis of negative differential mobility used for modelling space charge packets.

  14. Determination of the charge carrier compensation mechanism in Te-doped GaAs by scanning tunneling microscopy

    NASA Astrophysics Data System (ADS)

    Gebauer, J.; Weber, E. R.; Jäger, N. D.; Urban, K.; Ebert, Ph.

    2003-03-01

    We identified the charge carrier compensation mechanism in Te-doped GaAs with atomically resolved scanning tunneling microscopy. Three types of defects were found: tellurium donors (TeAs), Ga vacancies (VGa), and Ga vacancy-donor complexes (VGa-TeAs). We show quantitatively that the compensation in Te-doped bulk GaAs is exclusively caused by vacancy-donor complexes in contrast to Si-doped GaAs. This is explained with the Fermi-level effect as the universal mechanism leading to Ga vacancy formation in n-doped GaAs, and a Coulomb interaction leading to the formation of the complexes. The quantification of the carrier compensation yields a -3e charge state of VGa in bulk GaAs.

  15. Effect of temperature and rare-earth doping on charge-carrier mobility in indium-monoselenide crystals

    SciTech Connect

    Abdinov, A. Sh.; Babayeva, R. F.; Amirova, S. I.; Rzayev, R. M.

    2013-08-15

    In the temperature range T = 77-600 K, the dependence of the charge-carrier mobility ({mu}) on the initial dark resistivity is experimentally investigated at 77 K ({rho}d{sub 0}), as well as on the temperature and the level (N) of rare-earth doping with such elements as gadolinium (Gd), holmium (Ho), and dysprosium (Dy) in n-type indium-monoselenide (InSe) crystals. It is established that the anomalous behavior of the dependences {mu}(T), {mu}({rho}d{sub 0}), and {mu}(N) found from the viewpoint of the theory of charge-carrier mobility in crystalline semiconductors is related, first of all, to partial disorder in indium-monoselenide crystals and can be attributed to the presence of random drift barriers in the free energy bands.

  16. Antitubercular Agent Delamanid and Metabolites as Substrates and Inhibitors of ABC and Solute Carrier Transporters

    PubMed Central

    Shimokawa, Yoshihiko; Shibata, Masakazu; Hashizume, Kenta; Hamasako, Yusuke; Ohzone, Yoshihiro; Kashiyama, Eiji; Umehara, Ken

    2016-01-01

    Delamanid (Deltyba, OPC-67683) is the first approved drug in a novel class of nitro-dihydro-imidazooxazoles developed for the treatment of multidrug-resistant tuberculosis. Patients with tuberculosis require treatment with multiple drugs, several of which have known drug-drug interactions. Transporters regulate drug absorption, distribution, and excretion; therefore, the inhibition of transport by one agent may alter the pharmacokinetics of another, leading to unexpected adverse events. Therefore, it is important to understand how delamanid affects transport activity. In the present study, the potencies of delamanid and its main metabolites as the substrates and inhibitors of various transporters were evaluated in vitro. Delamanid was not transported by the efflux ATP-binding cassette (ABC) transporters P-glycoprotein (P-gp; MDR1/ABCB1) and breast cancer resistance protein (BCRP/ABCG2), solute carrier (SLC) transporters, organic anion-transporting polypeptides, or organic cation transporter 1. Similarly, metabolite 1 (M1) was not a substrate for any of these transporters except P-gp. Delamanid showed no inhibitory effect on ABC transporters MDR1, BCRP, and bile salt export pump (BSEP; ABCB11), SLC transporters, or organic anion transporters. M1 and M2 inhibited P-gp- and BCRP-mediated transport but did so only at the 50% inhibitory concentrations (M1, 4.65 and 5.71 μmol/liter, respectively; M2, 7.80 and 6.02 μmol/liter, respectively), well above the corresponding maximum concentration in plasma values observed following the administration of multiple doses in clinical trials. M3 and M4 did not affect the activities of any of the transporters tested. These in vitro data suggest that delamanid is unlikely to have clinically relevant interactions with drugs for which absorption and disposition are mediated by this group of transporters. PMID:27021329

  17. A new class of carriers that transport selective cargo from the trans Golgi network to the cell surface

    PubMed Central

    Wakana, Yuichi; van Galen, Josse; Meissner, Felix; Scarpa, Margherita; Polishchuk, Roman S; Mann, Matthias; Malhotra, Vivek

    2012-01-01

    We have isolated a membrane fraction enriched in a class of transport carriers that form at the trans Golgi network (TGN) and are destined for the cell surface in HeLa cells. Protein kinase D (PKD) is required for the biogenesis of these carriers that contain myosin II, Rab6a, Rab8a, and synaptotagmin II, as well as a number of secretory and plasma membrane-specific cargoes. Our findings reveal a requirement for myosin II in the migration of these transport carriers but not in their biogenesis per se. Based on the cargo secreted by these carriers we have named them CARTS for CARriers of the TGN to the cell Surface. Surprisingly, CARTS are distinct from the carriers that transport vesicular stomatitis virus (VSV)-G protein and collagen I from the TGN to the cell surface. Altogether, the identification of CARTS provides a valuable means to understand TGN to cell surface traffic. PMID:22909819

  18. Nonequilibrium charge susceptibility and dynamical conductance: identification of scattering processes in quantum transport.

    PubMed

    Ness, H; Dash, L K

    2012-03-23

    We calculate the nonequilibrium charge transport properties of nanoscale junctions in the steady state and extend the concept of charge susceptibility to the nonequilibrium conditions. We show that the nonequilibrium charge susceptibility is related to the nonlinear dynamical conductance. In spectroscopic terms, both contain the same features versus applied bias when charge fluctuation occurs in the corresponding electronic resonances. However, we show that, while the conductance exhibits features at biases corresponding to inelastic scattering with no charge fluctuations, the nonequilibrium charge susceptibility does not. We suggest that measuring both the nonequilibrium conductance and charge susceptibility in the same experiment will permit us to differentiate between different scattering processes in quantum transport.

  19. Electronic Properties, Screening, and Efficient Carrier Transport in NaSbS2

    NASA Astrophysics Data System (ADS)

    Sun, Jifeng; Singh, David J.

    2017-02-01

    NaSbS2 is a semiconductor that was recently shown to have remarkable efficacy as a solar absorber indicating efficient charge collection even in material containing defects. We report first-principles calculations of properties that show (1) an indirect gap only slightly smaller than the direct gap, which may impede the recombination of photoexcited carriers, (2) highly anisotropic electronic and optical properties reflecting a layered crystal structure, (3) a pushed-up valence-band maximum due to repulsion from the Sb 5 s states, and (4) cross-gap hybridization between the S p —derived valence bands and the Sb 5 p states. This latter feature leads to enhanced Born effective charges that can provide local screening and, therefore, defect tolerance. These features are discussed in relation to the performance of the compound as a semiconductor with efficient charge collection.

  20. Influence of radiative recombination on the minority-carrier transport in direct band-gap semiconductors

    NASA Technical Reports Server (NTRS)

    Von Roos, O.

    1983-01-01

    When a semiconductor sample is irradiated by means of an external source, emitting photons or electrons, excess carriers are produced which distribute themselves throughout the sample. One of the parameters which determine the distribution of the carriers is the surface recombination velocity. The present investigation is concerned with the recombination lifetime tau. The predominant mechanism for recombination in wide band-gap semiconductors is described by the Shockley-Read-Hall (SRH) theory. The transport equations are derived for free carriers and the radiation field. The considered theory is applied to a semiinfinite, one-dimensional semiconductor slab irradiated by light of a given frequency. Some numerical considerations based on n-type GaAs are presented. Attention is given to a determination of the radiation transmitted through the surface of the sample.

  1. Effects of hydrostatic pressure on lipid bilayer membranes. II. Activation and reaction volumes of carrier mediated ion transport.

    PubMed Central

    Benz, R.; Conti, F.

    1986-01-01

    Measurements of voltage relaxations following brief charge-pulses applied to lipid bilayers have been performed at different hydrostatic pressures in the presence of the neutral carriers cyclo (D-Val-L-Pro-L-Val-D-Pro)3(PV) and valinomycin. From double-exponential relaxations observed in membranes containing PV-K+ complexes estimates were obtained of the amount of membrane absorbed complexes, NMS, and of the rate of complex translocation, kMS. The pressure dependence of kMS corresponded to an activation volume for translocation of approximately 12 cm3/mol independent of ionic strength and K+ concentration. The pressure dependence of NMS strongly varied with K+-concentration suggesting a major role of ion-complexation in solution which is estimated to involve a reaction volume of 25.5 cm3/mol, while the volume of absorption of a PV-K+ complex by the membrane was estimated -7.5 cm3/mol. The relaxations observed in the presence of valinomycin contained three exponentials and could be used to estimate four rate constants and one absorption parameter which characterize the valinomycin-mediated transport. When the transport of Rb+ was tested, the rate constant for the complex dissociation, kD, and the total concentration of free and complexed carriers in the membrane, No, were found to be pressure insensitive. The translocation rates for the complex, kMS and for the free carrier, kS, were instead markedly pressure dependent according to estimated activation volumes in the range of 11 to 18 cm3/mol. The recombination rate constant kR was also pressure dependent according to an activation volume of 12-14 cm3/mol. The study of the valinomycin-K+ transport yielded similar results as far as N.,ks, and kms are concerned, but in this case kR was pressure independent, while kD was increased by pressure. The net volume change associated with the transfer of a free ion to the membrane in the form of a valinomycin-ion complex was nevertheless very similar for K+ and Rb+. It is

  2. Charge Transport Properties of Durene Crystals from First-Principles.

    PubMed

    Motta, Carlo; Sanvito, Stefano

    2014-10-14

    We establish a rigorous computational scheme for constructing an effective Hamiltonian to be used for the determination of the charge carrier mobility of pure organic crystals at finite temperature, which accounts for van der Waals interactions, and it includes vibrational contributions from the entire phonon spectrum of the crystal. Such an approach is based on the ab initio framework provided by density functional theory and the construction of a tight-binding effective model via Wannier transformation. The final Hamiltonian includes coupling of the electrons to the crystals phonons, which are also calculated from density functional theory. We apply this methodology to the case of durene, a small π-conjugated molecule, which forms a high-mobility herringbone-stacked crystal. We show that accounting correctly for dispersive forces is fundamental for obtaining a high-quality phonon spectrum, in agreement with experiments. Then, the mobility as a function of temperature is calculated along different crystallographic directions and the phonons most responsible for the scattering are identified.

  3. Two-dimensional Mineral [Pb2BiS3 ][AuTe2 ]: High mobility Charge Carriers in Single-atom-thick Layers

    NASA Astrophysics Data System (ADS)

    Fang, Lei; Im, J.; Stoumpos, C.; Shi, F.; Dravid, V.; Leroux, M.; Freeman, A.; Kwok, W.-K.,; Chung, D.-Y.; Kanatzidis, M.

    2015-03-01

    We report that [Pb2BiS3][AuTe2], known as a naturally occurring mineral buckhornite, hosts 2D carriers in single-atom-thick layers. The structure is composed of stacking layers of weakly coupled [Pb2BiS3] and [AuTe2] sheets. The insulating [Pb2BiS3] sheet inhibits interlayer charge hopping and confines the carriers in the basal plane of the single-atom-thick [AuTe2] layer. Magneto-transport measurements and theoretical calculations show a property of multiband semimetal with compensated density of electrons and holes, which exhibit high hole carrier mobility of 1360 cm2/Vs. This material possesses an extremely large anisotropy 104, comparable to benchmark materials graphite. The electronic structure features linear band dispersion at the Fermi level and ultrahigh Fermi velocities of 106 m/s which are virtually identical to that of graphene. The weak interlayer coupling gives rise to the highly cleavable property of single crystal specimens, indicating a prospect for monolayer system. This research was supported by the DoE, BES, under Contract No. DE-AC02-06CH11357, and NUANCE Center at the Northwestern Univeristy.

  4. Carrier-mediated placental transport of cimetidine and valproic acid across differentiating JEG-3 cell layers.

    PubMed

    Ikeda, K; Ueda, C; Yamada, K; Nakamura, A; Hatsuda, Y; Kawanishi, S; Nishii, S; Ogawa, M

    2015-07-01

    Human choriocarcinoma has been used as a model to study trophoblast transcellular drug transport in the placenta. Previous models had limitations regarding low molecular weight drug transport through the intracellular gap junction. The purpose of this study was to evaluate placental carrier-mediated transport across a differentiating JEG-3 choriocarcinoma cell (DJEGs) layer model in which the intracellular gap junction was restricted. Cimetidine is the substrate of an efflux transporter, breast cancer resistance protein (BCRP). BCRP highly expressed in the placenta, and its function in the DJEGs model was investigated. In addition, the placental drug transport of another efflux transporter, multidrug resistance-associated proteins (MRPs), and an influx transporter, monocarboxylate transporter (MCT), were examined with various substrates. Cimetidine permeated from the fetal side to the maternal side at significantly high levels and saturated in a dose-dependent manner. The permeability coefficient of a MRP substrate, fluorescein, across the DJEGs model was significantly increased by inhibiting MRP function with probenecid. On the other hand, permeation in the influx direction to the fetal side with a substrate of MCT, valproic acid, had a gentle dose-dependent saturation. These findings suggest that the DJEGs model could be used to evaluate transcellular placental drug transport mediated by major placental transporters.

  5. Non-dispersive carrier transport in molecularly doped polymers and the convection-diffusion equation

    NASA Astrophysics Data System (ADS)

    Tyutnev, A. P.; Parris, P. E.; Saenko, V. S.

    2015-08-01

    We reinvestigate the applicability of the concept of trap-free carrier transport in molecularly doped polymers and the possibility of realistically describing time-of-flight (TOF) current transients in these materials using the classical convection-diffusion equation (CDE). The problem is treated as rigorously as possible using boundary conditions appropriate to conventional time of flight experiments. Two types of pulsed carrier generation are considered. In addition to the traditional case of surface excitation, we also consider the case where carrier generation is spatially uniform. In our analysis, the front electrode is treated as a reflecting boundary, while the counter electrode is assumed to act either as a neutral contact (not disturbing the current flow) or as an absorbing boundary at which the carrier concentration vanishes. As expected, at low fields transient currents exhibit unusual behavior, as diffusion currents overwhelm drift currents to such an extent that it becomes impossible to determine transit times (and hence, carrier mobilities). At high fields, computed transients are more like those typically observed, with well-defined plateaus and sharp transit times. Careful analysis, however, reveals that the non-dispersive picture, and predictions of the CDE contradict both experiment and existing disorder-based theories in important ways, and that the CDE should be applied rather cautiously, and even then only for engineering purposes.

  6. Optical absorption and DFT calculations in L-aspartic acid anhydrous crystals: Charge carrier effective masses point to semiconducting behavior

    NASA Astrophysics Data System (ADS)

    Silva, A. M.; Silva, B. P.; Sales, F. A. M.; Freire, V. N.; Moreira, E.; Fulco, U. L.; Albuquerque, E. L.; Maia, F. F., Jr.; Caetano, E. W. S.

    2012-11-01

    Density functional theory (DFT) computations within the local-density approximation and generalized gradient approximation in pure form and with dispersion correction (GGA+D) were carried out to investigate the structural, electronic, and optical properties of L-aspartic acid anhydrous crystals. The electronic (band structure and density of states) and optical absorption properties were used to interpret the light absorption measurements we have performed in L-aspartic acid anhydrous crystalline powder at room temperature. We show the important role of the layered spatial disposition of L-aspartic acid molecules in anhydrous L-aspartic crystals to explain the observed electronic and optical properties. There is good agreement between the GGA+D calculated and experimental lattice parameters, with (Δa, Δb, Δc) deviations of (0.029,-0.023,-0.024) (units in Å). Mulliken [J. Chem. Phys.JCPSA60021-960610.1063/1.1740588 23, 1833 (1955)] and Hirshfeld [Theor. Chim. ActaTCHAAM0040-574410.1007/BF00549096 44, 129 (1977)] population analyses were also performed to assess the degree of charge polarization in the zwitterion state of the L-aspartic acid molecules in the DFT converged crystal. The lowest-energy optical absorption peaks related to transitions between the top of the valence band and the bottom of the conduction band involve O 2p valence states and C 1p and O 2p conduction states, with the carboxyl and COOH lateral chain group contributing significantly to the energy band gap. Among the calculated band gaps, the lowest GGA+D (4.49-eV) gap is smaller than the experimental estimate of 5.02 eV, as obtained by optical absorption. Such a wide-band-gap energy together with the small carrier effective masses estimated from band curvatures allows us to suggest that an L-aspartic acid anhydrous crystal can behave as a wide-gap semiconductor. A comparison of effective masses among directions parallel and perpendicular to the L-aspartic molecules layers reveals that charge

  7. Charge transport in amorphous and tetragonal semiconducting YBaCuO films

    NASA Astrophysics Data System (ADS)

    Çelik-Butler, Z.; Shan, P. C.; Butler, D. P.; Jahanzeb, A.; Travers, C. M.; Kula, W.; Sobolewski, R.

    1997-06-01

    We have explored the charge transport mechanisms in six different YBaCuO semiconducting thin films in the temperature range of 70 K to room temperature. Two of the samples were deposited on LaAlO 3 substrate and were tetragonal with the composition of YBa 2Cu 3O 6.5 and YBa 2Cu 3O 6.3. The other four were amorphous as-deposited on Si substrate with and without a MgO buffer layer, and on an oxidized Si substrate with and without a MgO buffer layer. All tested films exhibited semiconductor-type resistance vs. temperature characteristics with increasing resistance as the temperature was decreased. Around room temperature all six samples had thermally activated transport characteristics that was interpreted as activation of hole-like carriers from localized states around the Fermi level to extended states. As the temperature was decreased, two tetragonal samples went through a transition to a variable range hopping-like conduction. The amorphous ones remained within the thermally-activated transport regime in the temperature range of 253 K to 318 K, with EA ≈ 0.2 eV.

  8. Charge transport in hybrid nanorod-polymer composite photovoltaiccells

    SciTech Connect

    Huynh, Wendy U.; Dittmer, Janke J.; Teclemariam, Nerayo; Milliron, Delia; Alivisatos, A. Paul; Barnham, Keith W.J.

    2002-06-21

    Charge transport in composites of inorganic nanorods and aconjugated polymer is investigated using a photovoltaic device structure.We show that the current-voltage (I-V) curves in the dark can be modelledusing the Shockley equation modified to include series and shuntresistance at low current levels, and using an improved model thatincorporates both the Shockley equation and the presence of a spacecharge limited region at high currents. Under illumination, theefficiency of photocurrent generation is found to be dependent on appliedbias. Furthermore, the photocurrent-light intensity dependence was foundto be sublinear. An analysis of the shunt resistance as a function oflight intensity suggests that the photocurrent as well as the fill factoris diminished as a result of increased photoconductivity of the activelayer at high light intensity. By studying the intensity dependence ofthe open circuit voltage for nanocrystals with different diameters andthus ! band gaps, it was inferred that Fermi-level pinning occurs at theinterface between the aluminum electrode and the nanocrystal.

  9. Anisotropic charge transport in flavonoids as organic semiconductors

    NASA Astrophysics Data System (ADS)

    Hou, Chunyuan; Chen, Xin

    2015-03-01

    A quantum mechanical approach has been used to investigate on the potential for using two naturally occurring flavonoids: quercetin and luteolin as candidates for organic semiconductor. Selection of flavonoids enables to evaluate the effects of hydroxyl group structural features. The relationship between molecular packing and charge transport in flavonoids is presented. The calculated results indicate that quercetin should be an ideal candidate as high-performance p-type organic semiconductor material, while luteolin is predicted as n-type organic semiconductor material. The predicted maximum electron mobility value of quercetin is 0.075 cm2 V-1 s-1, which appears at the orientation angle near 91°/271° of conducting channel on the reference planes b-c. Theoretical investigation of natural semiconductors is helpful for designing higher performance electronic materials used in biochemical and industrial field to replace expensive and rare organic materials.

  10. Charge transport across the metal-polymer film boundary

    NASA Astrophysics Data System (ADS)

    Yumaguzin, Yu. M.; Salikhov, T. R.; Shayakhmetov, R. U.; Salikhov, R. B.

    2016-08-01

    Thin polyaniline films were fabricated by thermal vacuum evaporation from a Knudsen effusion cell. The conducting properties of films synthesized under different evaporation conditions were studied. The enhancement of the emission capacity of a wolfram tip coated with a polyaniline film of a nanometer thickness was demonstrated experimentally. A model of the discovered effect was proposed. The obtained Fowler-Nordheim current-voltage characteristics were used to estimate the change in the electronic work function occurring when a thin film is deposited on the tip surface. The effective temperature of electrons emitted from the polyaniline film was determined based on the results of analysis of energy distributions, and the specific features of charge transport in the metal-polyaniline-vacuum system were examined. A model of energy bands of the metal-polymer film contact was also constructed.

  11. Lunar dust transport by photoelectric charging at sunset

    NASA Technical Reports Server (NTRS)

    Pelizzari, M. A.; Criswell, D. R.

    1978-01-01

    The motion of dust grains from a photoelectrically charged object at the moon's sunset terminator is studied with the aid of a simple model. It is shown that sunlit objects ranging in size from less than 0.01 cm to 5 cm in radius are responsible for the levitation of dust grains to heights of observed horizon glow. The transverse displacement of these grains is observed to be at least twice their maximum altitude, so that fitting the latter to horizon glow implies horizontal particle ranges typically 6 to 60 cm. Detachment of these grains from the sunlit areas takes place mainly along the contracting sunlight boundaries as the areas shrink during sunset. A high ratio of intergrain adhesion force to dust-grain weight is essential for the occurrence of horizon glow and significant dust transport from the subcentimeter sized sunlit areas.

  12. Transport of intense beams of highly charged ions

    NASA Astrophysics Data System (ADS)

    Winkler, M.; Gammino, S.; Ciavola, G.; Celona, L.; Spadtke, P.; Tinschert, K.

    2005-10-01

    The new generation of ion sources delivers beams with intensities of several mA. This requires a careful design of the analysing system and the low-energy beam transport (LEBT) from the source to the subsequent systems. At INFN-LNS, high intensity proton sources (TRIPS [L. Celona, G. Ciavola, S. Gammino et al ., Rev. Sci. Instrum. 75(5) 1423 (2004)], PM-TRIPS [G. Ciavola, L. Celona, S. Gammino et al ., Rev. Sci. Instrum. 75(5) 1453 (2004)]) as well as ECR ion sources for the production of highly charged high-intensity heavy ion beams are developed (SERSE [S. Gammino, G. Ciavola, L. Celona et al ., Rev. Sci. Instrum. 72(11) 4090 (2001), and references therein], GyroSERSE [S. Gammino et al ., Rev. Sci. Instrum. 75(5) 1637 (2004)], MS-ECRIS [G. Ciavola et al ., (2005), 11th Int. Conf. on Ion Sources, Caen, (in press)]). In this paper, we present ion-optical design studies of various LEBT systems for ion-sources devoted to the production of intense beams. Calculations were performed using the computer codes GIOS [H. Wollnik, J. Brezina and M. Berz, NIM A 258 (1987)], GICO [M. Berz, H.C. Hoffmann, and H. Wollnik, NIM A 258 (1987)], and TRANSPORT [K.L. Brown, F. Rothacker and D.C. Carey, SLAC-R-95-462, Fermilab-Pub-95/069, UC-414 (1995)]. Simulations take into account the expected phase space growth of the beam emittance due to space-charge effects and image aberrations introduced by the magnetic elements.

  13. Microscopic theory on charge transports of a correlated multiorbital system

    NASA Astrophysics Data System (ADS)

    Arakawa, Naoya

    2016-07-01

    Current vertex correction (CVC), the backflowlike correction to the current, comes from conservation laws, and the CVC due to electron correlation contains information about many-body effects. However, it has been little understood how the CVC due to electron correlation affects the charge transports of a correlated multiorbital system. To improve this situation, I studied the in-plane resistivity ρa b and the Hall coefficient in the weak-field limit RH, in addition to the magnetic properties and the electronic structure, for a t2 g-orbital Hubbard model on a square lattice in a paramagnetic state away from or near an antiferromagnetic (AF) quantum-critical point (QCP) in the fluctuation-exchange (FLEX) approximation with the CVCs arising from the self-energy (Σ ), the Maki-Thompson (MT) irreducible four-point vertex function, and the main terms of the Aslamasov-Larkin (AL) one. Then, I found three main results about the CVCs. First, the main terms of the AL CVC do not qualitatively change the results obtained in the FLEX approximation with the Σ CVC and the MT CVC. Second, ρa b and RH near the AF QCP have a high-temperature region, governed mainly by the Σ CVC, and a low-temperature region, governed mainly by the Σ CVC and the MT CVC. Third, in case away from the AF QCP, the MT CVC leads to a considerable effect on only RH at low temperatures, although RH at high temperatures and ρa b at all temperatures considered are sufficiently described by including only the Σ CVC. Those findings reveal several aspects of many-body effects on the charge transports of a correlated multiorbital system. I also achieved the qualitative agreement with several experiments of Sr2RuO4 or Sr2Ru0.975Ti0.025O4 . Moreover, I showed several better points of this theory than other theories.

  14. DNA Charge Transport: From Chemical Principles to the Cell

    PubMed Central

    Arnold, Anna R.; Grodick, Michael A.; Barton, Jacqueline K.

    2016-01-01

    The DNA double helix has captured the imagination of many, bringing it to the forefront of biological research. DNA has unique features that extend our interest into areas of chemistry, physics, material science and engineering. Our laboratory has focused on studies of DNA charge transport (CT), wherein charges can efficiently travel long molecular distances through the DNA helix while maintaining an exquisite sensitivity to base pair π-stacking. Because DNA CT chemistry reports on the integrity of the DNA duplex, this property may be exploited to develop electrochemical devices to detect DNA lesions and DNA-binding proteins. Furthermore, studies now indicate that DNA CT may also be used in the cell by, for example, DNA repair proteins, as a cellular diagnostic, in order to scan the genome to localize efficiently to damage sites. In this review, we describe this evolution of DNA CT chemistry from the discovery of fundamental chemical principles to applications in diagnostic strategies and possible roles in biology. PMID:26933744

  15. Metal Complexes for DNA-Mediated Charge Transport

    PubMed Central

    Barton, Jacqueline K.; Olmon, Eric D.; Sontz, Pamela A.

    2010-01-01

    In all organisms, oxidation threatens the integrity of the genome. DNA-mediated charge transport (CT) may play an important role in the generation and repair of this oxidative damage. In studies involving long-range CT from intercalating Ru and Rh complexes to 5′-GG-3′ sites, we have examined the efficiency of CT as a function of distance, temperature, and the electronic coupling of metal oxidants bound to the base stack. Most striking is the shallow distance dependence and the sensitivity of DNA CT to how the metal complexes are stacked in the helix. Experiments with cyclopropylamine-modified bases have revealed that charge occupation occurs at all sites along the bridge. Using Ir complexes, we have seen that the process of DNA-mediated reduction is very similar to that of DNA-mediated oxidation. Studies involving metalloproteins have, furthermore, shown that their redox activity is DNA-dependent and can be DNA-mediated. Long range DNA-mediated CT can facilitate the oxidation of DNA-bound base excision repair proteins to initiate a redox-active search for DNA lesions. DNA CT can also activate the transcription factor SoxR, triggering a cellular response to oxidative stress. Indeed, these studies show that within the cell, redox-active proteins may utilize the same chemistry as that of synthetic metal complexes in vitro, and these proteins may harness DNA-mediated CT to reduce damage to the genome and regulate cellular processes. PMID:21643528

  16. Transport of colloidal silica in unsaturated sand: Effect of charging properties of sand and silica particles.

    PubMed

    Fujita, Yosuke; Kobayashi, Motoyoshi

    2016-07-01

    We have studied the transport of colloidal silica in various degrees of a water-saturated Toyoura sand column, because silica particles are widely used as catalyst carriers and abrasive agents, and their toxicity is reported recently. Since water-silica, water-sand, and air-water interfaces have pH-dependent negative charges, the magnitude of surface charge was controlled by changing the solution pH. The results show that, at high pH conditions (pH 7.4), the deposition of colloidal silica to the sand surface is interrupted and the silica concentration at the column outlet immediately reaches the input concentration in saturated conditions. In addition, the relative concentration of silica at the column outlet only slightly decreases to 0.9 with decreasing degrees of water saturation to 38%, because silica particles are trapped in straining regions in the soil pore and air-water interface. On the other hand, at pH 5 conditions (low pH), where sand and colloid have less charge, reduced repulsive forces result in colloidal silica attaching onto the sand in saturated conditions. The deposition amount of silica particles remarkably increases with decreasing degrees of water saturation to 37%, which is explained by more particles being retained in the sand column associated with the air-water interface. In conclusion, at higher pH, the mobility of silica particles is high, and the air-water interface is inactive for the deposition of silica. On the other hand, at low pH, the deposition amount increases with decreasing water saturation, and the particle transport is inhibited.

  17. Model for transport and reaction of defects and carriers within displacement cascades in gallium arsenide

    SciTech Connect

    Wampler, William R. Myers, Samuel M.

    2015-01-28

    A model is presented for recombination of charge carriers at evolving displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with the details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers, and defects within a representative spherically symmetric cluster of defects. The initial radial defect profiles within the cluster were determined through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to displacement damage from energetic particle irradiation.

  18. Model for transport and reaction of defects and carriers within displacement cascades in gallium arsenide

    NASA Astrophysics Data System (ADS)

    Wampler, William R.; Myers, Samuel M.

    2015-01-01

    A model is presented for recombination of charge carriers at evolving displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with the details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers, and defects within a representative spherically symmetric cluster of defects. The initial radial defect profiles within the cluster were determined through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to displacement damage from energetic particle irradiation.

  19. The Major Facilitative Folate Transporters Solute Carrier 19A1 and Solute Carrier 46A1: Biology and Role in Antifolate Chemotherapy of Cancer

    PubMed Central

    Wilson, Mike R.; Hou, Zhanjun

    2014-01-01

    This review summarizes the biology of the major facilitative membrane transporters, the reduced folate carrier (RFC) (Solute Carrier 19A1) and the proton-coupled folate transporter (PCFT) (Solute Carrier 46A1). Folates are essential vitamins, and folate deficiency contributes to a variety of health disorders. RFC is ubiquitously expressed and is the major folate transporter in mammalian cells and tissues. PCFT mediates the intestinal absorption of dietary folates and appears to be important for transport of folates into the central nervous system. Clinically relevant antifolates for cancer, such as methotrexate and pralatrexate, are transported by RFC, and loss of RFC transport is an important mechanism of methotrexate resistance in cancer cell lines and in patients. PCFT is expressed in human tumors, and is active at pH conditions associated with the tumor microenvironment. Pemetrexed is an excellent substrate for both RFC and PCFT. Novel tumor-targeted antifolates related to pemetrexed with selective membrane transport by PCFT over RFC are being developed. In recent years, there have been major advances in understanding the structural and functional properties and the regulation of RFC and PCFT. The molecular bases for methotrexate resistance associated with loss of RFC transport and for hereditary folate malabsorption, attributable to mutant PCFT, were determined. Future studies should continue to translate molecular insights from basic studies of RFC and PCFT biology into new therapeutic strategies for cancer and other diseases. PMID:24396145

  20. The major facilitative folate transporters solute carrier 19A1 and solute carrier 46A1: biology and role in antifolate chemotherapy of cancer.

    PubMed

    Matherly, Larry H; Wilson, Mike R; Hou, Zhanjun

    2014-04-01

    This review summarizes the biology of the major facilitative membrane transporters, the reduced folate carrier (RFC) (Solute Carrier 19A1) and the proton-coupled folate transporter (PCFT) (Solute Carrier 46A1). Folates are essential vitamins, and folate deficiency contributes to a variety of health disorders. RFC is ubiquitously expressed and is the major folate transporter in mammalian cells and tissues. PCFT mediates the intestinal absorption of dietary folates and appears to be important for transport of folates into the central nervous system. Clinically relevant antifolates for cancer, such as methotrexate and pralatrexate, are transported by RFC, and loss of RFC transport is an important mechanism of methotrexate resistance in cancer cell lines and in patients. PCFT is expressed in human tumors, and is active at pH conditions associated with the tumor microenvironment. Pemetrexed is an excellent substrate for both RFC and PCFT. Novel tumor-targeted antifolates related to pemetrexed with selective membrane transport by PCFT over RFC are being developed. In recent years, there have been major advances in understanding the structural and functional properties and the regulation of RFC and PCFT. The molecular bases for methotrexate resistance associated with loss of RFC transport and for hereditary folate malabsorption, attributable to mutant PCFT, were determined. Future studies should continue to translate molecular insights from basic studies of RFC and PCFT biology into new therapeutic strategies for cancer and other diseases.