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Sample records for chemical vapor infiltration

  1. Overview of chemical vapor infiltration

    SciTech Connect

    Besmann, T.M.; Stinton, D.P.; Lowden, R.A.

    1993-06-01

    Chemical vapor infiltration (CVI) is developing into a commercially important method for the fabrication of continuous filament ceramic composites. Current efforts are focused on the development of an improved understanding of the various processes in CVI and its modeling. New approaches to CVI are being explored, including pressure pulse infiltration and microwave heating. Material development is also proceeding with emphasis on improving the oxidation resistance of the interfacial layer between the fiber and matrix. This paper briefly reviews these subjects, indicating the current state of the science and technology.

  2. Microwave assisted chemical vapor infiltration

    SciTech Connect

    Devlin, D.J.; Currier, R.P.; Barbero, R.S.; Espinoza, B.F.; Elliott, N.

    1991-12-31

    A microwave assisted process for production of continuous fiber reinforced ceramic matrix composites is described. A simple apparatus combining a chemical vapor infiltration reactor with a conventional 700 W multimode oven is described. Microwave induced inverted thermal gradients are exploited with the ultimate goal of reducing processing times on complex shapes. Thermal gradients in stacks of SiC (Nicalon) cloths have been measured using optical thermometry. Initial results on the ``inside out`` deposition of SiC via decomposition of methyltrichlorosilane in hydrogen are presented. Several key processing issues are identified and discussed. 5 refs.

  3. Microwave assisted chemical vapor infiltration

    SciTech Connect

    Devlin, D.J.

    1993-12-31

    The purpose of this program is to develop a new process for the fabrication of ceramic matrix composites by chemical vapor infiltration. This period has been devoted in part to the exploration of material systems suitable for MACVI processing. A number of potential processing schemes are possible using combinations of absorbing and transparent material as composite components. This includes the use of an absorbing preform (nicalon fiber) combined with a transparent matrix (silicon nitride). Composites 5 cm in diameter by 1 cm. thick have been fabricated to densities of 65% theoretical. Processing times for these materials are under 20 hours. Higher densities will require additional microwave power now possible with the new reactor. The most effective MACVI scheme will involve the use of a transparent fiber with an absorbing matrix. The hot spot will be initiated by appropriate treatment of the central region of the preform. To this end alumna fibers with pretreatments to control thermal gradients has been explored. Nextel 610 fibers have been effectively pretreated carbon coating resulting in preferential heating in the interior of the preform. Possible matrix materials include siliconized silicon carbide, doped silicon carbide, alumna and zirconia. A patent for MACVI has been issued 10/19/93.

  4. Chemical vapor infiltration using microwave energy

    DOEpatents

    Devlin, David J.; Currier, Robert P.; Laia, Jr., Joseph R.; Barbero, Robert S.

    1993-01-01

    A method for producing reinforced ceramic composite articles by means of chemical vapor infiltration and deposition in which an inverted temperature gradient is utilized. Microwave energy is the source of heat for the process.

  5. Fabrication of fiber-reinforced composites by chemical vapor infiltration

    SciTech Connect

    Matlin, W.M.; Stinton, D.P.; Besmann, T.M.

    1995-08-01

    A two-step forced chemical vapor infiltration process was developed that reduced infiltration times for 4.45 cm dia. by 1.27 cm thick Nicalon{sup +} fiber preforms by two thirds while maintaining final densities near 90 %. In the first stage of the process, micro-voids within fiber bundles in the cloth were uniformly infiltrated throughout the preform. In the second stage, the deposition rate was increased to more rapidly fill the macro-voids between bundles within the cloth and between layers of cloth. By varying the thermal gradient across the preform uniform infiltration rates were maintained and high final densities achieved.

  6. Chemical vapor infiltration of non-oxide ceramic matrix composites

    SciTech Connect

    Besmann, T.M.; Stinton, D.P.; Lowden, R.A.

    1993-12-31

    Continuous fiber ceramic composites are enabling new, high temperature structural applications. Chemical vapor infiltration methods for producing these composites are being investigated, with the complexity of filament weaves and deposition chemistry merged with standard heat and mass transport relationships. Silicon carbide- based materials are, by far, the most mature, and are already being used in aerospace applications. This paper addresses the state-of-the-art of the technology and outlines current issues.

  7. Fabrication of fiber-reinforced composites by chemical vapor infiltration

    SciTech Connect

    Besmann, T.M.; McLaughlin, J.C.; Probst, K.J.; Anderson, T.J.; Starr, T.L.

    1997-12-01

    Silicon carbide-based heat exchanger tubes are of interest to energy production and conversion systems due to their excellent high temperature properties. Fiber-reinforced SiC is of particular importance for these applications since it is substantially tougher than monolithic SiC, and therefore more damage and thermal shock tolerant. This paper reviews a program to develop a scaled-up system for the chemical vapor infiltration of tubular shapes of fiber-reinforced SiC. The efforts include producing a unique furnace design, extensive process and system modeling, and experimental efforts to demonstrate tube fabrication.

  8. Chemical vapor deposited fiber coatings and chemical vapor infiltrated ceramic matrix composites

    SciTech Connect

    Kmetz, M.A.

    1992-01-01

    Conventional Chemical Vapor Deposition (CVD) and Organometallic Chemical Vapor Deposition (MOCVD) were employed to deposit a series of interfacial coatings on SiC and carbon yarn. Molybdenum, tungsten and chromium hexacarbonyls were utilized as precursors in a low temperature (350[degrees]C) MOCVD process to coat SiC yarn with Mo, W and Cr oxycarbides. Annealing studies performed on the MoOC and WOC coated SiC yarns in N[sub 2] to 1,000[degrees]C establish that further decomposition of the oxycarbides occurred, culminating in the formation of the metals. These metals were then found to react with Si to form Mo and W disilicide coatings. In the Cr system, heating in N[sub 2] above 800[degrees]C resulted in the formation of a mixture of carbides and oxides. Convention CVD was also employed to coat SiC and carbon yarn with C, Bn and a new interface designated BC (a carbon-boron alloy). The coated tows were then infiltrated with SiC, TiO[sub 2], SiO[sub 2] and B[sub 4]C by a chemical vapor infiltration process. The B-C coatings were found to provide advantageous interfacial properties over carbon and BN coatings in several different composite systems. The effectiveness of these different coatings to act as a chemically inert barrier layer and their relationship to the degree of interfacial debonding on the mechanical properties of the composites were examined. The effects of thermal stability and strength of the coated fibers and composites were also determined for several difference atmospheres. In addition, a new method for determining the tensile strength of the as-received and coated yarns was also developed. The coated fibers and composites were further characterized by AES, SEM, XPS, IR and X-ray diffraction analysis.

  9. Chemical vapor infiltration of TiB{sub 2} composites

    SciTech Connect

    Besmann, T.M.

    1995-05-01

    This program is designed to develop a Hall-Heroult aluminum smelting cathode with substantially improved properties. The carbon cathodes in current use require significant anode-to-cathode spacing in order to prevent shorting, causing significant electrical inefficiencies. This is due to the non-wettability of carbon by aluminum which causes instability in the cathodic aluminum pad. It is suggested that a fiber reinforced-TiB{sub 2} matrix composite would have the requisite wettability, strength, strain-to-failure, cost, and lifetime to solve this problem. The approach selected to fabricate such a cathode material is chemical vapor infiltration (CVI). This program is designed to evaluate potential fiber reinforcements, fabricate test specimens, and test the materials in a static bath and lab-scale Hall cell.

  10. Mass transport measurements and modeling for chemical vapor infiltration

    SciTech Connect

    Starr, T.L.; Chiang, D.Y.; Fiadzo, O.G.; Hablutzel, N.

    1997-12-01

    This project involves experimental and modeling investigation of densification behavior and mass transport in fiber preforms and partially densified composites, and application of these results to chemical vapor infiltration (CVI) process modeling. This supports work on-going at ORNL in process development for fabrication of ceramic matrix composite (CMC) tubes. Tube-shaped composite preforms are fabricated at ORNL with Nextel{trademark} 312 fiber (3M Corporation, St. Paul, MN) by placing and compressing several layers of braided sleeve on a tubular mandrel. In terms of fiber architecture these preforms are significantly different than those made previously with Nicalon{trademark} fiber (Nippon Carbon Corp., Tokyo, Japan) square weave cloth. The authors have made microstructure and permeability measurements on several of these preforms and a few partially densified composites so as to better understand their densification behavior during CVI.

  11. Properties of chemical vapor infiltration diamond deposited in a diamond powder matrix

    SciTech Connect

    Panitz, J.K.G.; Tallant, D.R.; Hills, C.R.; Staley, D.J.

    1993-12-31

    Densifying non-mined diamond powder precursors with diamond produced by chemical vapor infiltration (CVI) is an attractive approach for forming thick diamond deposits that avoids many potential manufacturability problems associated with predominantly chemical vapor deposition (CVD) processes. The authors have developed two techniques: electrophoretic deposition and screen printing, to form nonmined diamond powder precursors on substrates. They then densify these precursors in a hot filament assisted reactor. Analysis indicated that a hot filament assisted chemical vapor infiltration process forms intergranular diamond deposits with properties that are to some degree different from predominantly hot-filament-assisted CVD material.

  12. Fabrication of fiber-reinforced composites by chemical vapor infiltration

    SciTech Connect

    Besmann, T.M.; Stinton, D.P.; Matlin, W.M.; Liaw, P.K.

    1996-08-01

    Processing equipment for the infiltration of fiber-reinforced composite tubes is being designed that incorporates improvements over the equipment used to infiltrate disks. A computer-controlled machine-man interface is being developed to allow for total control of all processing variables. Additionally, several improvements are being made to the furnace that will reduce the complexity and cost of the process. These improvements include the incorporation of free standing preforms, cast mandrels, and simpler graphite heating elements.

  13. Fabrication of fiber-reinforced composites by chemical vapor infiltration

    SciTech Connect

    Besmann, T.M.; Matlin, W.M.; Stinton, D.P.; Liaw, P.K.

    1996-06-01

    Processing equipment for the infiltration of fiber-reinforced composite tubes is being designed that incorporates improvements over the equipment used to infiltrate disks. A computer-controlled machine-man interface is being developed to allow for total control of all processing variables. Additionally, several improvements are being made to the furnace that will reduce the complexity and cost of the process. These improvements include the incorporation of free standing preforms, cast mandrels, and simpler graphite heating elements.

  14. Simulates the Forced-Flow Chemical Vapor Infiltration in Steady State

    1997-12-12

    GTCVI is a finite volume model for steady-state simulation of forced-flow chemical vapor infiltration in either Cartesian or cylindrical coordinates. The model solves energy and momentum balances simultaneously over a given domain discretized into an array of finite volume elements. The species balances and deposition rates are determined after the energy and momentum balances converge. Density-dependent preform properties are included in the model. Transient average density, backpressure, temperature gradient, and average radial deposition rates canmore » be summarized. Optimal infiltration conditions can be found by varying temperature, flow, and reactant concentration.« less

  15. Modeling of chemical vapor infiltration for ceramic composites reinforced with layered, woven fabrics

    NASA Technical Reports Server (NTRS)

    Chung, Gui-Yung; Mccoy, Benjamin J.

    1991-01-01

    A homogeneous model is developed for the chemical vapor infiltration by one-dimensional diffusion into a system of layered plies consisting of woven tows containing bundles of filaments. The model predictions of the amount of deposition and the porosity of the sample as a function of time are compared with the predictions of a recent nonhomogeneous model with aligned holes formed by the weave. The nonhomogeneous model allows for diffusion through the aligned holes, into the spaces between plies, and into the gaps around filaments; i.e., three diffusion equations apply. Relative to the nonhomogeneous results, the homogeneous model underestimates the amount of deposition, since the absence of holes and spaces allows earlier occlusion of gaps around filaments and restricts the vapor infiltration.

  16. Nextel{trademark}/SiC composites fabricated using forced chemical vapor infiltration

    SciTech Connect

    Weaver, B.L.; Lowden, R.A.; McLaughlin, J.C.; Stinton, D.P.; Besmann, T.M.; Schwarz, O.J.

    1993-06-01

    Oxide fiber-reinforced silicon carbide matrix composites were fabricated employing the forced-flow, thermal gradient chemical vapor infiltration (FCVI) process. Composites using Nextel{sup TM} fibers of varying composition were prepared to investigate the effectiveness of each Nextel{sup TM} fiber as a reinforcement for the given matrix. A carbon interface coating was used for the baseline materials, however, alternate interlayers with improved oxidation resistance were also explored Room-temperature flexure strengths of as-fabricated composites and specimens heated in air at 1273 K were measured and compared to results for other SiC-matrix composites.

  17. An X-Ray Tomography Based Modeling Solution For Chemical Vapor Infiltration Of Ceramic Matrix Composites

    NASA Astrophysics Data System (ADS)

    Ros, William; Vignoles, Gérard L.; Germain, Christian

    2010-05-01

    A numerical tool for the simulation of Chemical Vapor Infiltration of carbon/carbon composites is introduced. The structure of the fibrous medium can be studied by high resolution X-Ray Computed Micro Tomography. Gas transport in various regimes is simulated by a random walk technique whilst the morphological evolution of the fluid/solid interface is handled by a Marching Cube technique. The program can be used to evaluate effective diffusivity and first order reaction rate. The numerical tool is validated by comparing computed effective properties of a straight slit pore with reactive walls to their analytical expression. Simulation of CVI processing of a real complex media is then presented.

  18. X-ray Tomographic Study of Chemical Vapor Infiltration Processing of Ceramic Composites.

    PubMed

    Kinney, J H; Breunig, T M; Starr, T L; Haupt, D; Nichols, M C; Stock, S R; Butts, M D; Saroyan, R A

    1993-05-01

    The fabrication of improved ceramic-matrix composites will require a better understanding of processing variables and how they control the development of the composite microstructure. Noninvasive, high-resolution methods of x-ray tomography have been used to measure the growth of silicon carbide in a woven Nicalon-fiber composite during chemical vapor infiltration. The high spatial resolution allows one to measure the densification within individual fiber tows and to follow the closure of macroscopic pores in situ. The experiments provide a direct test of a recently proposed model that describes how the surface area available for matrix deposition changes during infiltration. The measurements indicate that this surface area is independent of the fiber architecture and location within the preform and is dominated by large-scale macroporosity during the final stages of composite consolidation. The measured surface areas are in good agreement with the theoretical model.

  19. Chemical vapor infiltration of TiB{sub 2} fibrous composites

    SciTech Connect

    Besmann, T.M.

    1997-04-01

    This program is designed to develop a Hall-Heroult aluminum smelting cathode with substantially improved properties. The carbon cathodes in current use require significant anode-to-cathode spacing in order to prevent shorting, causing significant electrical inefficiencies. This is due to the non-wettability of carbon by aluminum which causes instability in the cathodic aluminum pad. It is suggested that a fiber reinforced-TiB{sub 2} matrix composite would have the requisite wettability, strength, strain-to-failure, cost, and lifetime to solve this problem. The approach selected to fabricate such a cathode material is chemical vapor infiltration (CVI). This process produces high purity matrix TiB{sub 2} without damaging the relatively fragile fibers. The program is designed to evaluate potential fiber reinforcements, fabricate test specimens, and scale the process to provide demonstration components.

  20. Finite-volume model for chemical vapor infiltration incorporating radiant heat transfer. Interim report

    SciTech Connect

    Smith, A.W.; Starr, T.L.

    1995-05-01

    Most finite-volume thermal models account for the diffusion and convection of heat and may include volume heating. However, for certain simulation geometries, a large percentage of heat flux is due to thermal radiation. In this paper a finite-volume computational procedure for the simulation of heat transfer by conduction, convection and radiation in three dimensional complex enclosures is developed. The radiant heat transfer is included as a source term in each volume element which is derived by Monte Carlo ray tracing from all possible radiating and absorbing faces. The importance of radiative heat transfer is illustrated in the modeling of chemical vapor infiltration (CVI) of tubes. The temperature profile through the tube preform matches experimental measurements only when radiation is included. An alternative, empirical approach using an {open_quotes}effective{close_quotes} thermal conductivity for the gas space can match the initial temperature profile but does not match temperature changes that occur during preform densification.

  1. Thermal expansion of laminated, woven, continuous ceramic fiber/chemical-vapor-infiltrated silicon carbide matrix composites

    NASA Technical Reports Server (NTRS)

    Eckel, Andrew J.; Bradt, Richard C.

    1990-01-01

    Thermal expansions of three two-dimensional laminate, continuous fiber/chemical-vapor-infiltrated silicon carbide matrix composites reinforced with either FP-Alumina (alumina), Nextel (mullite), or Nicalon (Si-C-O-N) fibers are reported. Experimental thermal expansion coefficients parallel to a primary fiber orientation were comparable to values calculated by the conventional rule-of-mixtures formula, except for the alumina fiber composite. Hysteresis effects were also observed during repeated thermal cycling of that composite. Those features were attributed to reoccurring fiber/matrix separation related to the micromechanical stresses generated during temperature changes and caused by the large thermal expansion mismatch between the alumina fibers and the silicon carbide matrix.

  2. Forced chemical vapor infiltration of tubular geometries: Modeling, design, and scale-up

    SciTech Connect

    Stinton, D.P.; Besmann, T.M.; Matlin, W.M.

    1995-06-01

    In advanced indirectly fired coal combustion systems and externally fired combined cycle concepts, ceramic heat exchangers are required to transfer heat from the hot combustion gases to the clean air that drives the gas turbines. For high efficiencies, the temperature of the turbine inlet needs to exceed 1100{degrees}C and preferably be about 1260{degrees}C. The heat exchangers will operate under pressure and experience thermal and mechanical stresses during heating and cooling, and some transients will be severe under upset conditions. Silicon carbide-matrix composites are promising for such applications because of their high strength at elevated temperature, light weight, thermal and mechanical resistance, damage tolerance, and oxidation and corrosion resistance. Fiber-reinforced composite tubes of several fiber architectures were fabricated by forced chemical vapor infiltration (FCVI) and characterized. Unfortunately, long times ({approximately}150 hours) were required to thoroughly density the tubes. An objective of the current investigation was to optimize the forced CVI process so that composite tubes could be fabricated in much shorter times. To aid in such optimization, a computer code which models the CVI process was used to identify critical process parameters. Finally, successful demonstration of the utility of composite tubes for these applications will require the testing of near-full scale components. As a result a new infiltration system was designed and constructed to prepare 10-cm diameter tubes, and is described in this report.

  3. Analysis techniques of lattice fringe images for quantified evaluation of pyrocarbon by chemical vapor infiltration.

    PubMed

    Li, Miaoling; Zhao, Hongxia; Qi, Lehua; Li, Hejun

    2014-10-01

    Some image analysis techniques are developed for simplifying lattice fringe images of deposited pyrocarbon in carbon/carbon composites by chemical vapor infiltration. They are mainly the object counting method for detecting the optimum threshold, the self-adaptive morphological filtering, the node-separation technique for breaking the aggregate fringes, and some post processing algorithms for reconstructing the fringes. The simplified fringes are the foundation for defining and extracting quantitative nanostructure parameters of pyrocarbon. The frequency filter window of a Fourier transform is defined as the circular band that retains only those fringes with interlayer distance between 0.3 and 0.45 nm. Some judge criteria are set to define topological relation between fringes. For example, the aspect ratio and area of fringes are employed to detect aggregate fringes. Fringe coaxality and distance between endpoints are used to judge the disconnected fringes. The optimum values are determined by using the iterative correction techniques. The best cut-off value for the short fringes is chosen only when there is a reasonable match between the mean fringe length and the value measured by X-ray diffraction. The adopted techniques have been verified to be feasible and to have the potential to convert the complex lattice fringe image to a set of distinct fringe structures.

  4. Expedient Respiratory and Physical Protection: Does a Wet Towel Work to Prevent Chemical Warfare Agent Vapor Infiltration?

    SciTech Connect

    Sorensen, J.H.

    2002-08-30

    The purpose of this paper is to examine the effectiveness of expedient protection strategies to reduce exposure to vapors from chemical warfare agents. This includes an examination of the physical and the psychological effectiveness of measures such as using a wet towel to seal a door jam against the infiltration of chemicals while sheltering in place or to provide expedient respiratory protection. Respiratory protection for civilians has never been considered a viable option for population protection in the CSEPP. Problems of storage, ability to effectively don respirators, and questionable fit have been primary factors in rejecting this option. Expedient respiratory protection seems to offer little benefits for population protection for chemical agent vapors. Furthermore, using wet towels as a vapor barrier at the bottom of a door should be discouraged. The wetted towel provides no vapor filtration and its effectiveness in infiltration reduction is unknown. Taping the bottom of the door will still likely provide greater infiltration reduction and is recommended as the current method for use in sheltering.

  5. Aligned Carbon Nanotube Reinforced Silicon Carbide Composites by Chemical Vapor Infiltration

    SciTech Connect

    Gu, Zhan Jun; Yang, Ying Chao; Li, Kai Yuan; Tao, Xin Yong; Eres, Gyula; Howe, Jane Y; Zhang, Li Tong; Li, Xiao Dong; Pan, Zhengwei

    2011-01-01

    Owing to their exceptional stiffness and strength1 4, carbon nanotubes (CNTs) have long been considered to be an ideal reinforcement for light-weight, high-strength, and high-temperature-resistant ceramic matrix composites (CMCs)5 10. However, the research and development in CNT-reinforced CMCs have been greatly hindered due to the challenges related to manufacturing including poor dispersion, damages during dispersion, surface modification, densification and sintering, weak tube/matrix interfaces, and agglomeration of tubes at the matrix grain boundaries5,11. Here we report the fabrication of high-quality aligned CNT/SiC composites by chemical vapor infiltration (CVI), a technique that is being widely used to fabricate commercial continuous-filament CMCs12 15. Using the CVI technique most of the challenges previously encountered in the fabrication of CNT composites were readily overcome. Nanotube pullouts, an important toughening mechanism for CMCs, were consistently observed on all fractured CNT/SiC samples. Indeed, three-point bending tests conducted on individual CNT/SiC nanowires (diameters: 50 200 nm) using an atomic force microscope show that the CNT-reinforced SiC nanowires are about an order of magnitude tougher than the bulk SiC. The tube/matrix interface is so intimate and the SiC matrix is so dense that a ~50-nm-thick SiC coating can effectively protect the inside nanotubes from being oxidized at 1600 C in air. The CVI method may be extended to produce nanotube composites from a variety of matrix

  6. Structure and properties of braided sleeve preforms for chemical vapor infiltration

    SciTech Connect

    Starr, T.L.; Fiadzo, O.G.; Hablutzel, N.

    1998-04-01

    In all composites the properties and structure of the reinforcement strongly influence the performance of the material. For some composites, however, the reinforcement also affects the fabrication process itself exerting an additional, second order influence on performance. This is the case for the chemical vapor infiltration (CVI) process for fabrication of ceramic matrix composites. In this process the matrix forms progressively as a solid deposit, first onto the fiber surfaces, then onto the previous layer of deposit, ultimately growing to fill the inter-fiber porosity. The transport of reactants to the surfaces and the evolved morphology of the matrix depend on the initial reinforcement structure. This structure can vary greatly and is controlled by such factors as fiber size and cross-section, the number of filaments and amount of twist per tow or yarn, and the weave or braid architecture. Often the choice of reinforcement is based on mechanical performance analysis or on the cost and availability of the material or on the temperature stability of the fiber. Given this choice, the composite densification process--CVI--must be optimized to attain a successful material. Ceramic fiber in the form of cylindrical braided sleeve is an attractive choice for fabrication of tube-form ceramic matrix composites. Multiple, concentric layers of sleeve can be placed over a tubular mandrel, compressed and fixed with a binder to form a freestanding tube preform. This fiber architecture is different than that created by layup of plain weave cloth--the material used in most previous CVI development. This report presents the results of the investigation of CVI densification of braided sleeve preforms and the evolution of their structure and transport properties during processing.

  7. Growth mechanism of thin films of yttria-stabilized zirconia by chemical vapor infiltration using NiO-ceria substrate as oxygen source

    NASA Astrophysics Data System (ADS)

    Kikuchi, Kenji; Okada, Koji; Mineshige, Atsushi

    The deposition of yttria-stabilized zirconia films on a NiO-ceria substrate by chemical vapor infiltration (CVI) using ZrCl 4 and YCl 3 as metal sources and NiO-ceria as oxygen source was studied. The resultant films were cubic YSZ with a Y 2O 3 content of 3.7-4.2 mol%, and were transparent and strong. A NiO content of NiO-ceria above 60 mol% increases the growth rate of the YSZ film from about 5 to 25 μm over 2 h, indicating that chemical vapor deposition (CVD) occurred in addition to electrochemical vapor deposition (EVD), whereas NiO contents below 60 mol% does not affect the growth rate, indicating that only electrochemical vapor deposition occurred. The growth mechanism of the YSZ film is determined and a YSZ thin film is successfully fabricated on NiO-ceria to improve mechanical strength.

  8. A novel procedure to obtain nanocrystalline diamond/porous silicon composite by chemical vapor deposition/infiltration processes.

    PubMed

    Miranda, C R B; Azevedo, A F; Baldan, M R; Beloto, A F; Ferreira, N G

    2009-06-01

    Nanocrystalline diamond (NCD) films were formed on porous silicon (PS) substrate by Chemical Vapor Deposition/Infiltration (CVD/CVI) process using a hot filament reactor. This innovative procedure is determinant to grow a controlled three-dimensional diamond structure with diamond grains formation in the pores, covering uniformly the different growth planes. In this CVI process, a piece of reticulated vitreous carbon (RVC) was used, under de PS substrate, as an additional solid source of hydrocarbon that ensures the production of pertinent carbon growth species directly on PS and into its pores. PS substrates were obtained by anodization etching process of n-type silicon wafer in a hydrofluoric acid (HF) solution containing acetonitrile (CH3CN) which result in an uniform and well controlled porous distribution and size when compared with the usual ethanol solution. Depositions were performed using Ar-H2-CH4 where the methane concentration varied from 0 up to 1.0 vol%, to analyze the influence of RVC use as an additional carbon source on growth mechanism. Scanning Electron Microscopy (SEM) and Field Emission Gun (FEG) were used to investigate PS and NCD film morphology. SEM images of NCD showed faceted nanograins with average size from 5 to 16 nm and uniform surface texture covering all the supports among the pores resulting in an apparent micro honeycomb structure. Raman spectra confirmed the existence of sp2-bonded carbon at the grain boundaries. The spectra showed a peak that may be deconvoluted in two components at 1332 cm(-1) (diamond) and 1345 cm(-1) (D band). Two shoulders at 1150 and 1490 cm(-1) also appear and are assigned to transpolyacetylene (TPA) segments at the grain boundaries of NCD surfaces. In addition, X-ray diffraction analyses of all films presented characteristic diamond diffraction peaks corresponding to (111), (220) and (311). PMID:19504935

  9. A novel procedure to obtain nanocrystalline diamond/porous silicon composite by chemical vapor deposition/infiltration processes.

    PubMed

    Miranda, C R B; Azevedo, A F; Baldan, M R; Beloto, A F; Ferreira, N G

    2009-06-01

    Nanocrystalline diamond (NCD) films were formed on porous silicon (PS) substrate by Chemical Vapor Deposition/Infiltration (CVD/CVI) process using a hot filament reactor. This innovative procedure is determinant to grow a controlled three-dimensional diamond structure with diamond grains formation in the pores, covering uniformly the different growth planes. In this CVI process, a piece of reticulated vitreous carbon (RVC) was used, under de PS substrate, as an additional solid source of hydrocarbon that ensures the production of pertinent carbon growth species directly on PS and into its pores. PS substrates were obtained by anodization etching process of n-type silicon wafer in a hydrofluoric acid (HF) solution containing acetonitrile (CH3CN) which result in an uniform and well controlled porous distribution and size when compared with the usual ethanol solution. Depositions were performed using Ar-H2-CH4 where the methane concentration varied from 0 up to 1.0 vol%, to analyze the influence of RVC use as an additional carbon source on growth mechanism. Scanning Electron Microscopy (SEM) and Field Emission Gun (FEG) were used to investigate PS and NCD film morphology. SEM images of NCD showed faceted nanograins with average size from 5 to 16 nm and uniform surface texture covering all the supports among the pores resulting in an apparent micro honeycomb structure. Raman spectra confirmed the existence of sp2-bonded carbon at the grain boundaries. The spectra showed a peak that may be deconvoluted in two components at 1332 cm(-1) (diamond) and 1345 cm(-1) (D band). Two shoulders at 1150 and 1490 cm(-1) also appear and are assigned to transpolyacetylene (TPA) segments at the grain boundaries of NCD surfaces. In addition, X-ray diffraction analyses of all films presented characteristic diamond diffraction peaks corresponding to (111), (220) and (311).

  10. 3-D Braided, continuous fiber ceramic composites produced by chemical vapor infiltration. Final report, 18 January 1991-2 January 1992

    SciTech Connect

    Mello, M.D.; Florentine, R.A.

    1993-12-01

    Continuous fiber reinforced ceramic composites have been successfully fabricated by chemical vapor infiltration of silicon carbide and silicon nitride matrix materials. Fiber preforms were three dimensionally braided with Nicalon(TM) and Nextel(TM) fiber materials forming a network of through thickness fiber architectures. Three unique material compositions were produced with the objective of demonstrating the capability of braiding brittle ceramic fibers and producing quality composites structurally capable of performing in a ballistic environment. It is anticipated that the continuous fiber architecture will be a significant technical advantage towards improvements in ceramic armor applications where non-catastrophic failure and increased toughness are a concern.

  11. A two-dimensional model of chemical vapor infiltration with radio-frequency heating and spatio-temporal evolution of a pulsed chlorine plasma

    NASA Astrophysics Data System (ADS)

    Midha, Vikas

    The first part of this work focused on modeling radio- frequency assisted chemical vapor infiltration (CVI) for the fabrication of fiber-reinforced composite materials. CVI involves diffusion and chemical reaction of precursor gases in a fibrous preform to deposit solid material within the pores. A two-dimensional finite-element model was developed which included the solution of Maxwell's equations for electromagnetic fields, transport equations for multicomponent gas diffusion and chemical kinetics for the deposition of solid material. Simulation results showed that densification of long cylindrical preforms initially occurred radially around the central zone and then axially towards the ends of the preform. This densification pattern resulted in significant entrapment of porosity at the center of the preform and required a relatively long time for completion. Comparison of results with reported experimental data showed agreement of important trends which could not be predicted by existing one-dimensional models. Based on the geometry of the preform, novel schemes for improved radio-frequency assisted CVI were proposed which resulted in complete densification and reduced overall processing time significantly compared to conventional isothermal processes. The second part of this work focused on modeling of high- density, low-pressure chlorine discharges used for the fabrication of sub-micron devices in the semiconductor industry. Recent experiments showed that pulsing of input power can lead to significant improvement in the etching characteristics of electronegative gas discharges. A one- dimensional model was developed which captured the transition of an electron-ion plasma in the active glow to a negative-ion dominated or ion-ion plasma in the afterglow phase of a pulse. The spatial evolution of the negative-ion density showed formation of self-sharpening fronts during the active glow and subsequent back- propagation of the fronts during the afterglow. In the

  12. Chemical vapor deposition growth

    NASA Technical Reports Server (NTRS)

    Ruth, R. P.; Manasevit, H. M.; Kenty, J. L.; Moudy, L. A.; Simpson, W. I.; Yang, J. J.

    1976-01-01

    A chemical vapor deposition (CVD) reactor system with a vertical deposition chamber was used for the growth of Si films on glass, glass-ceramic, and polycrystalline ceramic substrates. Silicon vapor was produced by pyrolysis of SiH4 in a H2 or He carrier gas. Preliminary deposition experiments with two of the available glasses were not encouraging. Moderately encouraging results, however, were obtained with fired polycrystalline alumina substrates, which were used for Si deposition at temperatures above 1,000 C. The surfaces of both the substrates and the films were characterized by X-ray diffraction, reflection electron diffraction, scanning electron microscopy optical microscopy, and surface profilometric techniques. Several experiments were conducted to establish baseline performance data for the reactor system, including temperature distributions on the sample pedestal, effects of carrier gas flow rate on temperature and film thickness, and Si film growth rate as a function of temperature.

  13. Chemical vapor deposition growth

    NASA Technical Reports Server (NTRS)

    Ruth, R. P.; Manasevit, H. M.; Kenty, J. L.; Moudy, L. A.; Simpson, W. I.; Yang, J. J.

    1976-01-01

    The chemical vapor deposition (CVD) method for the growth of Si sheet on inexpensive substrate materials is investigated. The objective is to develop CVD techniques for producing large areas of Si sheet on inexpensive substrate materials, with sheet properties suitable for fabricating solar cells meeting the technical goals of the Low Cost Silicon Solar Array Project. Specific areas covered include: (1) modification and test of existing CVD reactor system; (2) identification and/or development of suitable inexpensive substrate materials; (3) experimental investigation of CVD process parameters using various candidate substrate materials; (4) preparation of Si sheet samples for various special studies, including solar cell fabrication; (5) evaluation of the properties of the Si sheet material produced by the CVD process; and (6) fabrication and evaluation of experimental solar cell structures, using standard and near-standard processing techniques.

  14. Chemical vapor deposition sciences

    SciTech Connect

    1992-12-31

    Chemical vapor deposition (CVD) is a widely used method for depositing thin films of a variety of materials. Applications of CVD range from the fabrication of microelectronic devices to the deposition of protective coatings. New CVD processes are increasingly complex, with stringent requirements that make it more difficult to commercialize them in a timely fashion. However, a clear understanding of the fundamental science underlying a CVD process, as expressed through computer models, can substantially shorten the time required for reactor and process development. Research scientists at Sandia use a wide range of experimental and theoretical techniques for investigating the science of CVD. Experimental tools include optical probes for gas-phase and surface processes, a range of surface analytic techniques, molecular beam methods for gas/surface kinetics, flow visualization techniques and state-of-the-art crystal growth reactors. The theoretical strategy uses a structured approach to describe the coupled gas-phase and gas-surface chemistry, fluid dynamics, heat and mass transfer of a CVD process. The software used to describe chemical reaction mechanisms is easily adapted to codes that model a variety of reactor geometries. Carefully chosen experiments provide critical information on the chemical species, gas temperatures and flows that are necessary for model development and validation. This brochure provides basic information on Sandia`s capabilities in the physical and chemical sciences of CVD and related materials processing technologies. It contains a brief description of the major scientific and technical capabilities of the CVD staff and facilities, and a brief discussion of the approach that the staff uses to advance the scientific understanding of CVD processes.

  15. Chemical vapor deposition growth

    NASA Technical Reports Server (NTRS)

    Ruth, R. P.; Manasevit, H. M.; Campbell, A. G.; Johnson, R. E.; Kenty, J. L.; Moudy, L. A.; Shaw, G. L.; Simpson, W. I.; Yang, J. J.

    1978-01-01

    The objective was to investigate and develop chemical vapor deposition (CVD) techniques for the growth of large areas of Si sheet on inexpensive substrate materials, with resulting sheet properties suitable for fabricating solar cells that would meet the technical goals of the Low Cost Silicon Solar Array Project. The program involved six main technical tasks: (1) modification and test of an existing vertical-chamber CVD reactor system; (2) identification and/or development of suitable inexpensive substrate materials; (3) experimental investigation of CVD process parameters using various candidate substrate materials; (4) preparation of Si sheet samples for various special studies, including solar cell fabrication; (5) evaluation of the properties of the Si sheet material produced by the CVD process; and (6) fabrication and evaluation of experimental solar cell structures, using impurity diffusion and other standard and near-standard processing techniques supplemented late in the program by the in situ CVD growth of n(+)/p/p(+) sheet structures subsequently processed into experimental cells.

  16. Microwave and RF assisted chemical vapor infiltration

    SciTech Connect

    Devlin, D.J.; Barbero, R.S.

    1995-05-01

    Work during this reporting period has focused on the development of a CVI technique for rapid production of carbon/carbon and alumina composite systems. The focus of the alumina effort is towards porous materials for membrane supports and hot gas filtration. Industrial interest in these applications include companies such as: Dow, Westinghouse, Amoco and DuPont. Applications for the carbon materials are numerous and include: brakes, sporting goods, biomedical materials, flaps and seals for thrust control, after burner nozzles, turbine engine flaps and rotors. This effort will focus on aircraft brakes. A collaboration is underway with Hitco a major producer of carbon/carbon materials.

  17. Simple Chemical Vapor Deposition Experiment

    ERIC Educational Resources Information Center

    Pedersen, Henrik

    2014-01-01

    Chemical vapor deposition (CVD) is a process commonly used for the synthesis of thin films for several important technological applications, for example, microelectronics, hard coatings, and smart windows. Unfortunately, the complexity and prohibitive cost of CVD equipment makes it seldom available for undergraduate chemistry students. Here, a…

  18. Chemical vapor deposition of sialon

    DOEpatents

    Landingham, R.L.; Casey, A.W.

    A laminated composite and a method for forming the composite by chemical vapor deposition are described. The composite includes a layer of sialon and a material to which the layer is bonded. The method includes the steps of exposing a surface of the material to an ammonia containing atmosphere; heating the surface to at least about 1200/sup 0/C; and impinging a gas containing N/sub 2/, SiCl/sub 4/, and AlCl/sub 3/ on the surface.

  19. Comparison of precursor infiltration into polymer thin films via atomic layer deposition and sequential vapor infiltration using in-situ quartz crystal microgravimetry

    SciTech Connect

    Padbury, Richard P.; Jur, Jesse S.

    2014-07-01

    Previous research exploring inorganic materials nucleation behavior on polymers via atomic layer deposition indicates the formation of hybrid organic–inorganic materials that form within the subsurface of the polymer. This has inspired adaptations to the process, such as sequential vapor infiltration, which enhances the diffusion of organometallic precursors into the subsurface of the polymer to promote the formation of a hybrid organic–inorganic coating. This work highlights the fundamental difference in mass uptake behavior between atomic layer deposition and sequential vapor infiltration using in-situ methods. In particular, in-situ quartz crystal microgravimetry is used to compare the mass uptake behavior of trimethyl aluminum in poly(butylene terephthalate) and polyamide-6 polymer thin films. The importance of trimethyl aluminum diffusion into the polymer subsurface and the subsequent chemical reactions with polymer functional groups are discussed.

  20. Chemical vapor deposition of sialon

    DOEpatents

    Landingham, Richard L.; Casey, Alton W.

    1982-01-01

    A laminated composite and a method for forming the composite by chemical vapor deposition. The composite includes a layer of sialon and a material to which the layer is bonded. The method includes the steps of exposing a surface of the material to an ammonia containing atmosphere; heating the surface to at least about 1200.degree. C.; and impinging a gas containing in a flowing atmosphere of air N.sub.2, SiCl.sub.4, and AlCl.sub.3 on the surface.

  1. Thickness limitations in carbon nanotube reinforced silicon nitride coatings synthesized by vapor infiltration

    SciTech Connect

    Eres, Gyula

    2012-01-01

    Chemical vapor infiltration is a convenient method for synthesizing carbon nanotube (CNT)-reinforced ceramic coatings. The thickness over which infiltration is relatively uniform is limited by gas phase diffusion in the pore structure. These effects were investigated in two types of silicon nitride matrix composites. With CNTs that were distributed uniformly on the substrate surface dense coatings were limited to thicknesses of several microns. With dual structured CNT arrays produced by photolithography coatings up to 400 gm thick were obtained with minimal residual porosity. Gas transport into these dual structured materials was facilitated by creating micron sized channels between "CNT pillars" (i.e. each pillar consisted of a large number of individual CNTs). The experimental results are consistent with basic comparisons between the rates of gas diffusion and silicon nitride growth in porous structures. This analysis also provides a general insight into optimizing infiltration conditions during the fabrication of thick CNT-reinforced composite coatings. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  2. Atmospheric pressure synthesis of photoluminescent hybrid materials by sequential organometallic vapor infiltration into polyethylene terephthalate fibers

    SciTech Connect

    Akyildiz, Halil I.; Mousa, Moataz Bellah M.; Jur, Jesse S.

    2015-01-28

    Exposing a polymer to sequential organometallic vapor infiltration (SVI) under low pressure conditions can significantly modify the polymer's chemical, mechanical, and optical properties. We demonstrate that SVI of trimethylaluminum into polyethylene terephthalate (PET) can also proceed readily at atmospheric pressure, and at 60 °C the extent of reaction determined by mass uptake is independent of pressure between 2.5 Torr and 760 Torr. At 120 °C, however, the mass gain is 50% larger at 2.5 Torr relative to that at 760 Torr, indicating that the precursor diffusion in the chamber and fiber matrix decreases at higher source pressure. Mass gain decreases, in general, as the SVI process temperature increases both at 2.5 Torr and 760 Torr attributed to the faster reaction kinetics forming a barrier layer, which prevents further diffusion of the reactive species. The resulting PET/Al-O{sub x} product shows high photoluminescence compared to untreated fibers. A physical mask on the polymer during infiltration at 760 Torr is replicated in the underlying polymer, producing an image in the polymer that is visible under UV illumination. Because of the reduced precursor diffusivity during exposure at 760 Torr, the image shows improved resolution compared to SVI performed under typical 2.5 Torr conditions.

  3. Chemical vapor deposition coating for micromachines

    SciTech Connect

    MANI,SEETHAMBAL S.; FLEMING,JAMES G.; SNIEGOWSKI,JEFFRY J.; DE BOER,MAARTEN P.; IRWIN,LAWRENCE W.; WALRAVEN,JEREMY A.; TANNER,DANELLE M.; DUGGER,MICHAEL T.

    2000-04-21

    Two major problems associated with Si-based MEMS devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structures to solve these problems. In this paper, the authors will present a process used to selectively coat MEMS devices with tungsten using a CVD (Chemical Vapor Deposition) process. The selective W deposition process results in a very conformal coating and can potentially solve both stiction and wear problems confronting MEMS processing. The selective deposition of tungsten is accomplished through silicon reduction of WF{sub 6}, which results in a self-limiting reaction. The selective deposition of W only on polysilicon surfaces prevents electrical shorts. Further, the self-limiting nature of this selective W deposition process ensures the consistency necessary for process control. Selective tungsten is deposited after the removal of the sacrificial oxides to minimize process integration problems. This tungsten coating adheres well and is hard and conducting, requirements for device performance. Furthermore, since the deposited tungsten infiltrates under adhered silicon parts and the volume of W deposited is less than the amount of Si consumed, it appears to be possible to release stuck parts that are contacted over small areas such as dimples. Results from tungsten deposition on MEMS structures with dimples will be presented. The effect of wet and vapor phase cleanings prior to the deposition will be discussed along with other process details. The W coating improved wear by orders of magnitude compared to uncoated parts. Tungsten CVD is used in the integrated-circuit industry, which makes this approach manufacturable.

  4. HANFORD CHEMICAL VAPORS WORKER CONCERNS & EXPOSURE EVALUATION

    SciTech Connect

    ANDERSON, T.J.

    2006-12-20

    Chemical vapor emissions from underground hazardous waste storage tanks on the Hanford site in eastern Washington State are a potential concern because workers enter the tank farms on a regular basis for waste retrievals, equipment maintenance, and surveillance. Tank farm contractors are in the process of retrieving all remaining waste from aging single-shell tanks, some of which date to World War II, and transferring it to newer double-shell tanks. During the waste retrieval process, tank farm workers are potentially exposed to fugitive chemical vapors that can escape from tank headspaces and other emission points. The tanks are known to hold more than 1,500 different species of chemicals, in addition to radionuclides. Exposure assessments have fully characterized the hazards from chemical vapors in half of the tank farms. Extensive sampling and analysis has been done to characterize the chemical properties of hazardous waste and to evaluate potential health hazards of vapors at the ground surface, where workers perform maintenance and waste transfer activities. Worker concerns. risk communication, and exposure assessment are discussed, including evaluation of the potential hazards of complex mixtures of chemical vapors. Concentrations of vapors above occupational exposure limits-(OEL) were detected only at exhaust stacks and passive breather filter outlets. Beyond five feet from the sources, vapors disperse rapidly. No vapors have been measured above 50% of their OELs more than five feet from the source. Vapor controls are focused on limited hazard zones around sources. Further evaluations of vapors include analysis of routes of exposure and thorough analysis of nuisance odors.

  5. Low-pressure, chemical vapor deposition polysilicon

    NASA Technical Reports Server (NTRS)

    Gallagher, B. D.; Crotty, G. C.

    1986-01-01

    The low-pressure chemical vapor deposition (LPCVD) of polycrystalline silicon was investigted. The physical system was described, as was the controlling process parameters and requirements for producing films for use as an integral portion of the solar cell contact system.

  6. Chemical vapor deposition of mullite coatings

    DOEpatents

    Sarin, Vinod; Mulpuri, Rao

    1998-01-01

    This invention is directed to the creation of crystalline mullite coatings having uniform microstructure by chemical vapor deposition (CVD). The process comprises the steps of establishing a flow of reactants which will yield mullite in a CVD reactor, and depositing a crystalline coating from the reactant flow. The process will yield crystalline coatings which are dense and of uniform thickness.

  7. Automated semiconductor vacuum chemical vapor deposition facility

    NASA Technical Reports Server (NTRS)

    1982-01-01

    A semiconductor vacuum chemical vapor deposition facility (totally automatic) was developed. Wafers arrived on an air track, automatically loaded into a furnace tube, processed, returned to the track, and sent on to the next operation. The entire process was controlled by a computer.

  8. Numerical modeling tools for chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Jasinski, Thomas J.; Childs, Edward P.

    1992-01-01

    Development of general numerical simulation tools for chemical vapor deposition (CVD) was the objective of this study. Physical models of important CVD phenomena were developed and implemented into the commercial computational fluid dynamics software FLUENT. The resulting software can address general geometries as well as the most important phenomena occurring with CVD reactors: fluid flow patterns, temperature and chemical species distribution, gas phase and surface deposition. The physical models are documented which are available and examples are provided of CVD simulation capabilities.

  9. Making Ceramic Fibers By Chemical Vapor

    NASA Technical Reports Server (NTRS)

    Revankar, Vithal V. S.; Hlavacek, Vladimir

    1994-01-01

    Research and development of fabrication techniques for chemical vapor deposition (CVD) of ceramic fibers presented in two reports. Fibers of SiC, TiB2, TiC, B4C, and CrB2 intended for use as reinforcements in metal-matrix composite materials. CVD offers important advantages over other processes: fibers purer and stronger and processed at temperatures below melting points of constituent materials.

  10. Silicon refinement by chemical vapor transport

    NASA Technical Reports Server (NTRS)

    Olson, J.

    1984-01-01

    Silicon refinement by chemical vapor transport is discussed. The operating characteristics of the purification process, including factors affecting the rate, purification efficiency and photovoltaic quality of the refined silicon were studied. The casting of large alloy plates was accomplished. A larger research scale reactor is characterized, and it is shown that a refined silicon product yields solar cells with near state of the art conversion efficiencies.

  11. Laser Velocimetry of Chemical Vapor Deposition Flows

    NASA Technical Reports Server (NTRS)

    1993-01-01

    Laser velocimetry (LV) is being used to measure the gas flows in chemical vapor deposition (CVD) reactors. These gas flow measurements can be used to improve industrial processes in semiconductor and optical layer deposition and to validate numerical models. Visible in the center of the picture is the graphite susceptor glowing orange-hot at 600 degrees C. It is inductively heated via the copper cool surrounding the glass reactor.

  12. Chemical-Vapor-Deposited Diamond Film

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1999-01-01

    This chapter describes the nature of clean and contaminated diamond surfaces, Chemical-vapor-deposited (CVD) diamond film deposition technology, analytical techniques and the results of research on CVD diamond films, and the general properties of CVD diamond films. Further, it describes the friction and wear properties of CVD diamond films in the atmosphere, in a controlled nitrogen environment, and in an ultra-high-vacuum environment.

  13. Chemical vapor deposition of epitaxial silicon

    DOEpatents

    Berkman, Samuel

    1984-01-01

    A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

  14. Graphene sheets via microwave chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Yuan, G. D.; Zhang, W. J.; Yang, Y.; Tang, Y. B.; Li, Y. Q.; Wang, J. X.; Meng, X. M.; He, Z. B.; Wu, C. M. L.; Bello, I.; Lee, C. S.; Lee, S. T.

    2009-01-01

    High-quality graphene sheets (GS) were synthesized on stainless steel substrates at ˜500 °C by microwave plasma chemical vapor deposition (CVD) in an atmosphere of methane/hydrogen mixture. The GS product was characterized to contain mostly 1- or 2-3-layers using scanning electron microscopy, transmission electron microscopy/selective area electron diffraction, atomic force microscopy, and Raman spectroscopy. The present CVD approach is capable of producing graphenes with high yield and high purity with no carbon impurities such as carbon nanotubes.

  15. Chemical Vapor Synthesis of Nanocrystalline Oxides

    NASA Astrophysics Data System (ADS)

    Djenadic, Ruzica; Winterer, Markus

    The generation of nanoparticles in the gas phase by Chemical Vapor Synthesis (CVS) may be described from the point of view of chemical engineering as a sequence of unit operations among which reactant delivery, reaction energy input, and product separation are key processes which determine the product characteristics and quality required by the applications of nanoparticles and powders. In case of CVS, the volatility of the reactants (precursors) may severely limit the possible type of products as well as the production rate. It is shown that these limits can be lifted by use of a laser flash evaporator which also enables the use of precursor mixtures for the production of complex oxides as shown for Co-doped ZnO and the pulsed operation to influence powder characteristics. The mode in which energy is supplied to the particle synthesis reactor has also substantial influence on particle and powder characteristics as is shown for TiO2 using different time-temperatureprofiles.

  16. Chemical vapor deposition of group IIIB metals

    DOEpatents

    Erbil, Ahmet

    1989-01-01

    Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula (I) ##STR1## where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula I is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula I and a heat decomposable tellurium compound under nonoxidizing conditions.

  17. Chemical Vapor Deposition Of Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Powell, J. Anthony; Larkin, David J.; Matus, Lawrence G.; Petit, Jeremy B.

    1993-01-01

    Large single-crystal SiC boules from which wafers of large area cut now being produced commerically. Availability of wafers opens door for development of SiC semiconductor devices. Recently developed chemical vapor deposition (CVD) process produces thin single-crystal SiC films on SiC wafers. Essential step in sequence of steps used to fabricate semiconductor devices. Further development required for specific devices. Some potential high-temperature applications include sensors and control electronics for advanced turbine engines and automobile engines, power electronics for electromechanical actuators for advanced aircraft and for space power systems, and equipment used in drilling of deep wells. High-frequency applications include communication systems, high-speed computers, and microwave power transistors. High-radiation applications include sensors and controls for nuclear reactors.

  18. Chemical vapor deposition of group IIIB metals

    DOEpatents

    Erbil, A.

    1989-11-21

    Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula given in the patent where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula 1 is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula 1 and a heat decomposable tellurium compound under nonoxidizing conditions.

  19. Chemical Vapor Deposition of Polybenzoxazole Precursors

    NASA Astrophysics Data System (ADS)

    Anthamatten, Mitchell

    2005-03-01

    Polybenzoxazoles are well known for their outstanding thermal and mechanical properties. We will describe a new solventless, chemical vapor deposition approach to fabricating films of high strength polybenzoxazoles. Advantages of such an approach are: 1) control of film thickness, 2) conformal coating onto substrates, and 3) potential improvement of in-plane mechanical properties. Our process involves the vacuum evaporation of two monomers: a hydroxyl-functionalized diamine (DHB) and a dianhydride (PMDA). The resulting films appear uniform and contain poly(amic acid) linkages. FTIR experiments show that the poly(amic acid) converts to a polyimide material upon curing at 150 to 200 degrees C. At higher temperatures there is evidence that benzoxazole linkages form, though, interestingly, we also observe a concomitant decrease in the film's mass. Our current studies aim at understanding these high-temperature processes and how they impact the polymer's crystallinity and mechanical properties.

  20. The influence of vapor pressure of chemicals on dermal penetration.

    PubMed

    Gilpin, Sarah

    2014-01-01

    Dermal exposure is an important route of entry for chemicals in occupational and consumer settings. Key to this exposure is the penetration of the skin's barrier, and key to this penetration is a chemical's vapor pressure. Until now, vapor pressure and its effects on the skin have yet to be widely studied. This review aims to provide some historical background on early work on dermal penetration for volatile materials, which has helped form later research into the effects of vapor pressure on chemical risk assessment for dermal exposures. This review should be the start of an investigation into more in-depth coverage of vapor pressure and current prediction models.

  1. Chemical vapor deposition of carbon nanomaterials

    NASA Astrophysics Data System (ADS)

    Hussain, Ashfaq

    Developments in the field of nanotechnology are causing a revolution in the world of materials science and engineering. Carbon nanomaterial thin films like nanocrystalline diamond films and carbon nanotubes are among the most prominent materials at the forefront of the nanotechnology revolution. Chief methods for synthesizing these materials have involved chemical vapor deposition (CVD) growth by catalysis from substrates. So far, these methods of synthesis have presented problems of cost and scalability because they have either employed multi-step, extensive substrate surface preparation procedures or used expensive CVD methods to achieve the desired growth. This research work presents the successful results of achieving the synthesis of nanocrystalline diamond thin films and high quality carbon nanotubes by a method which is both low cost and scalable. Specifically, this research program has employed the low cost and scalable method of hot filament chemical vapor deposition (HFCVD) in combination with very simple substrate surface preparation procedures and the CVD variables method of shaping carbon nanostructures to achieve the desired growth of carbon nanomaterial thin films. The CVD variables method, uniquely refined as a carbon nanotube shaping tool in this research work, consists of variation of CVD parameters like precursor gas composition, pressure, and temperature to change nanostructure morphology. The precursor gas mixture used contained variable proportions of the gases methane, hydrogen, and argon. Using this methodology, synthesis of nanocrystalline diamond was achieved on polished silicon substrates at a CVD precursor gas mixture composition in which argon to hydrogen ratio played a decisive role. By the same approach, optimum conditions for growth of carbon nanotubes on Fe-Ni and ferric sulfate coated silicon substrates were determined, leading to the growth of high purity carbon nanotubes of random and vertical orientation. The structures of

  2. Characterization of Metalorganic Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Jesser, W. A.

    1998-01-01

    A series of experimental and numerical investigations to develop a more complete understanding of the reactive fluid dynamics of chemical vapor deposition were conducted. In the experimental phases of the effort, a horizontal CVD reactor configuration was used for the growth of InP at UVA and for laser velocimetry measurements of the flow fields in the reactor at LaRC. This horizontal reactor configuration was developed for the growth of III-V semiconductors and has been used by our research group in the past to study the deposition of both GaAs and InP. While the ultimate resolution of many of the heat and mass transport issues will require access to a reduced-gravity environment, the series of groundbased research makes direct contributions to this area while attempting to answer the design questions for future experiments of how low must gravity be reduced and for how long must this gravity level be maintained to make the necessary measurements. It is hoped that the terrestrial experiments will be useful for the design of future microgravity experiments which likely will be designed to employ a core set of measurements for applications in the microgravity environment such as HOLOC, the Fluid Physics/Dynamics Facility, or the Schlieren photography, the Laser Imaging Velocimetry and the Laser Doppler Velocimetry instruments under development for the Advanced Fluids Experiment Module.

  3. Development of chemical vapor composites, CVC materials. Final report

    SciTech Connect

    1998-10-05

    Industry has a critical need for high-temperature operable ceramic composites that are strong, non-brittle, light weight, and corrosion resistant. Improvements in energy efficiency, reduced emissions and increased productivity can be achieved in many industrial processes with ceramic composites if the reaction temperature and pressure are increased. Ceramic composites offer the potential to meet these material requirements in a variety of industrial applications. However, their use is often restricted by high cost. The Chemical Vapor composite, CVC, process can reduce the high costs and multiple fabrication steps presently required for ceramic fabrication. CVC deposition has the potential to eliminate many difficult processing problems and greatly increase fabrication rates for composites. With CVC, the manufacturing process can control the composites` density, microstructure and composition during growth. The CVC process: can grow or deposit material 100 times faster than conventional techniques; does not require an expensive woven preform to infiltrate; can use high modulus fibers that cannot be woven into a preform; can deposit composites to tolerances of less than 0.025 mm on one surface without further machining.

  4. Preventing Chemical-Vapor Deposition In Selected Areas

    NASA Technical Reports Server (NTRS)

    Keeley, Joseph T.; Goela, Jitendra Singh; Pickering, Michael A.; Taylor, Raymond L.

    1991-01-01

    Method for prevention of chemical-vapor deposition of material in selected areas developed. Gas shroud isolates specific area from rest of deposition system. Inert gas flowing from beneath substrate prevents deposition between substrate and outer ring. Method extremely successful in selective deposition of SiC in chemical-vapor-deposition reactor. Used in deposition of SiC mirror blanks in Large Mirror Substrate and Lidar Mirror programs. Critical element in overall chemical-vapor-deposition process for producing large, lightweight mirrors.

  5. Worker Protection from Chemical Vapors: Hanford Tank Farms

    SciTech Connect

    Anderson, T.J.

    2007-07-01

    Chemical vapor emissions from underground hazardous waste storage tanks on the Hanford site in eastern Washington State are a potential concern because workers enter the tank farms on a regular basis for waste retrievals, equipment maintenance, and surveillance. Tank farm contractors are in the process of retrieving all remaining waste from aging single-shell tanks, some of which date to World War II, and transferring it to newer double-shell tanks. During the waste retrieval process, tank farm workers are potentially exposed to fugitive chemical vapors that can escape from tank head-spaces and other emission points. The tanks are known to hold more than 1,500 different species of chemicals, in addition to radionuclides. Exposure assessments have fully characterized the hazards from chemical vapors in half of the tank farms. Extensive sampling and analysis has been done to characterize the chemical properties of hazardous waste and to evaluate potential health hazards of vapors at the ground surface, where workers perform maintenance and waste transfer activities. Worker concerns, risk communication, and exposure assessment are discussed, including evaluation of the potential hazards of complex mixtures of chemical vapors. Concentrations of vapors above occupational exposure limits (OEL) were detected only at exhaust stacks and passive breather filter outlets. Beyond five feet from the sources, vapors disperse rapidly. No vapors have been measured above 50% of their OELs more than five feet from the source. Vapor controls are focused on limited hazard zones around sources. Further evaluations of vapors include analysis of routes of exposure and thorough analysis of nuisance odors. (authors)

  6. A visual and organic vapor sensitive photonic crystal sensor consisting of polymer-infiltrated SiO2 inverse opal.

    PubMed

    Zhang, Yuqi; Qiu, Jianhua; Hu, Rongrong; Li, Pei; Gao, Loujun; Heng, Liping; Tang, Ben Zhong; Jiang, Lei

    2015-04-21

    A photonic crystal (PC) sensor that can selectively detect organic vapors through visual color changes has been proposed. The sensor was fabricated by infiltrating a tetraphenylethene polymer (TPEP) into the voids of SiO2 inverse opal photonic crystal. When the sensor was exposed to tetrahydrofuran or acetone vapor, a red shift of the stopband of more than 50 nm could be clearly observed; meanwhile, the film's color changed from violet to cyan. Subsequently, when exposed to air, the stopband underwent a blue shift and the color returned to violet. The reason for the observed change is that a reversible adsorption-desorption process occurs on alternate exposure of the sensor to organic vapor and air, due to the high specific surface area of the inverse opal macroporous structure and the high affinity of TPEP to tetrahydrofuran and acetone. The adsorption of vapor analyte can increase the PC's effective refractive index, which will induce the stopband red shift and the resulting color change according to Bragg's Law. The reversible adsorption-desorption of organic vapors varied the effective refractive index of the sensor repeatedly, causing the reversible stopband shift and color change, and providing a general method for the design of visual vapor sensors. PMID:25777537

  7. A visual and organic vapor sensitive photonic crystal sensor consisting of polymer-infiltrated SiO2 inverse opal.

    PubMed

    Zhang, Yuqi; Qiu, Jianhua; Hu, Rongrong; Li, Pei; Gao, Loujun; Heng, Liping; Tang, Ben Zhong; Jiang, Lei

    2015-04-21

    A photonic crystal (PC) sensor that can selectively detect organic vapors through visual color changes has been proposed. The sensor was fabricated by infiltrating a tetraphenylethene polymer (TPEP) into the voids of SiO2 inverse opal photonic crystal. When the sensor was exposed to tetrahydrofuran or acetone vapor, a red shift of the stopband of more than 50 nm could be clearly observed; meanwhile, the film's color changed from violet to cyan. Subsequently, when exposed to air, the stopband underwent a blue shift and the color returned to violet. The reason for the observed change is that a reversible adsorption-desorption process occurs on alternate exposure of the sensor to organic vapor and air, due to the high specific surface area of the inverse opal macroporous structure and the high affinity of TPEP to tetrahydrofuran and acetone. The adsorption of vapor analyte can increase the PC's effective refractive index, which will induce the stopband red shift and the resulting color change according to Bragg's Law. The reversible adsorption-desorption of organic vapors varied the effective refractive index of the sensor repeatedly, causing the reversible stopband shift and color change, and providing a general method for the design of visual vapor sensors.

  8. Chemical Vapor Deposition Epitaxy an Patternless and Patterned Substrates.

    ERIC Educational Resources Information Center

    Takoudis, Christos G.

    1990-01-01

    Discusses chemical vapor deposition epitaxy on patternless and patterned substrates for an electronic materials processing course. Describes the processs types and features of epitaxy. Presents some potential problems of epitaxy. Lists 38 references. (YP)

  9. Chemical vapor deposition of copper films

    NASA Astrophysics Data System (ADS)

    Borgharkar, Narendra Shamkant

    We have studied the kinetics of copper chemical vapor deposition (CVD) for interconnect metallization using hydrogen (Hsb2) reduction of the Cu(hfac)sb2 (copper(II) hexafluoroacetylacetonate) precursor. Steady-state deposition rates were measured using a hot-wall microbalance reactor. For base case conditions of 2 Torr Cu(hfac)sb2, 40 Torr Hsb2, and 300sp°C, a growth rate of 0.5 mg cmsp{-2} hrsp{-1} (ca. 10 nm minsp{-1}) is observed. Reaction order experiments suggest that the deposition rate passes through a maximum at partial pressure of 2 Torr of Cu(hfac)sb2. The deposition rate has an overall half-order dependence on Hsb2 partial pressure. A Langmuir-Hinshelwood rate expression is used to describe the observed kinetic dependencies on Cu(hfac)sb2, Hsb2, and H(hfac). Based on the rate expression a mechanism is proposed in which the overall rate is determined by the surface reaction of adsorbed Cu(hfac)sb2 and H species. Additionally, the role of alcohols in enhancing the deposition rate has been investigated. Addition of isopropanol results in a six fold enhancement to yield a deposition rate of 3.3 mg cmsp{-2} hrsp{-1} (ca. 60 nm minsp{-1}) at 5 Torr of isopropanol, 0.4 Torr Cu(hfac)sb2, 40 Torr Hsb2, and 300sp°C. Ethanol and methanol give lower enhancements of 1.75 and 1.1 mg cmsp{-2} hrsp{-1}, respectively. A mechanism based on the ordering of the aqueous pKsba values of the alcohols is proposed to explain the observed results. Lastly, we have built a warm-wall Pedestal reactor apparatus to demonstrate copper CVD on TiN/Si substrates. The apparatus includes a liquid injection system for transport of isopropanol-diluted precursor solutions. At optimized conditions of precursor and substrate pre-treatments, we have deposited uniform films of copper on TiN/Si substrates at an average deposition rate of 3.0 mg cmsp{-2} hrsp{-1} (ca. 60 nm minsp{-1}).

  10. Chemical Vapor Deposition of Silicon from Silane Pyrolysis

    NASA Technical Reports Server (NTRS)

    Praturi, A. K.; Lutwack, R.; Hsu, G.

    1977-01-01

    The four basic elements in the chemical vapor deposition (CVD) of silicon from silane are analytically treated from a kinetic standpoint. These elements are mass transport of silane, pyrolysis of silane, nucleation of silicon, and silicon crystal growth. Rate expressions that describe the various steps involved in the chemical vapor deposition of silicon were derived from elementary principles. Applications of the rate expressions for modeling and simulation of the silicon CVD are discussed.

  11. Differentiation of vapor mixture with chemical sensor arrays

    NASA Astrophysics Data System (ADS)

    Kim, Chulki; Jung, Youngmo; Moon, Hi Gyu; Lee, Ji Eun; Shin, Bum Ju; Lim, Chaehyun; Choi, Jaebin; Seo, Minah; Kim, Jae Hun; Jun, Seong Chan; Kim, Sang Kyung; Kang, Chong Yun; Lee, Taikjin; Lee, Seok

    2015-07-01

    Arrays of partially selective chemical sensors have been the focus of extensive research over the past decades because of their potential for widespread application in ambient air monitoring, health and safety, and biomedical diagnostics. Especially, vapor sensor arrays based on functionalized nanomaterials have shown great promise with their high sensitivity by dimensionality and outstanding electronic properties. Here, we introduce experiments where individual vapors and mixtures of them are examined by different chemical sensor arrays. The collected data from those sensor arrays are further analyzed by a principal component analysis (PCA) and targeted vapors are recognized based on prepared database.

  12. Chemical vapor deposition of graphene single crystals.

    PubMed

    Yan, Zheng; Peng, Zhiwei; Tour, James M

    2014-04-15

    As a two-dimensional (2D) sp(2)-bonded carbon allotrope, graphene has attracted enormous interest over the past decade due to its unique properties, such as ultrahigh electron mobility, uniform broadband optical absorption and high tensile strength. In the initial research, graphene was isolated from natural graphite, and limited to small sizes and low yields. Recently developed chemical vapor deposition (CVD) techniques have emerged as an important method for the scalable production of large-size and high-quality graphene for various applications. However, CVD-derived graphene is polycrystalline and demonstrates degraded properties induced by grain boundaries. Thus, the next critical step of graphene growth relies on the synthesis of large graphene single crystals. In this Account, we first discuss graphene grain boundaries and their influence on graphene's properties. Mechanical and electrical behaviors of CVD-derived polycrystalline graphene are greatly reduced when compared to that of exfoliated graphene. We then review four representative pathways of pretreating Cu substrates to make millimeter-sized monolayer graphene grains: electrochemical polishing and high-pressure annealing of Cu substrate, adding of additional Cu enclosures, melting and resolidfying Cu substrates, and oxygen-rich Cu substrates. Due to these pretreatments, the nucleation site density on Cu substrates is greatly reduced, resulting in hexagonal-shaped graphene grains that show increased grain domain size and comparable electrical properties as to exfoliated graphene. Also, the properties of graphene can be engineered by its shape, thickness and spatial structure. Thus, we further discuss recently developed methods of making graphene grains with special spatial structures, including snowflakes, six-lobed flowers, pyramids and hexagonal graphene onion rings. The fundamental growth mechanism and practical applications of these well-shaped graphene structures should be interesting topics and

  13. The chemical vapor deposition of zirconium carbide onto ceramic substrates

    SciTech Connect

    Glass, John A, Jr.; Palmisiano, Nick, Jr.; Welsh, R. Edward

    1999-07-01

    Zirconium carbide is an attractive ceramic material due to its unique properties such as high melting point, good thermal conductivity, and chemical resistance. The controlled preparation of zirconium carbide films of superstoichiometric, stoichiometric, and substoichiometric compositions has been achieved utilizing zirconium tetrachloride and methane precursor gases in an atmospheric pressure high temperature chemical vapor deposition system.

  14. Flow of chemically reacting carbon vapor

    NASA Astrophysics Data System (ADS)

    Shustrov, Yu A.; Poniaev, S. A.; Bobashev, S. V.; Zhukov, B. G.

    2014-12-01

    Numerical simulation of a chemically reacting flow of an expanding gas flow consisting of carbon C and its clusters (C2 - C5) is presented. It is shown how the chemical composition of the mixture flow changes when it expands and its temperature decreases. The temperature range in which the nonequilibrium chemical model including separate direct and inverse cluster formation reactions should be used is determined. Variations in the effective adiabatic index in the C-C5 mixture and along the nozzle axis are given.

  15. Flexible Electronics: High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells (Adv. Mater. 28/2016).

    PubMed

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    On page 5939, J. V. Badding and co-workers describe the unrolling of a flexible hydrogenated amorphous silicon solar cell, deposited by high-pressure chemical vapor deposition. The high-pressure deposition process is represented by the molecules of silane infiltrating the small voids between the rolled up substrate, facilitating plasma-free deposition over a very large area. The high-pressure approach is expected to also find application for 3D nanoarchitectures.

  16. Flexible Electronics: High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells (Adv. Mater. 28/2016).

    PubMed

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    On page 5939, J. V. Badding and co-workers describe the unrolling of a flexible hydrogenated amorphous silicon solar cell, deposited by high-pressure chemical vapor deposition. The high-pressure deposition process is represented by the molecules of silane infiltrating the small voids between the rolled up substrate, facilitating plasma-free deposition over a very large area. The high-pressure approach is expected to also find application for 3D nanoarchitectures. PMID:27442970

  17. Vaporization of a mixed precursors in chemical vapor deposition for YBCO films

    NASA Technical Reports Server (NTRS)

    Zhou, Gang; Meng, Guangyao; Schneider, Roger L.; Sarma, Bimal K.; Levy, Moises

    1995-01-01

    Single phase YBa2Cu3O7-delta thin films with T(c) values around 90 K are readily obtained by using a single source chemical vapor deposition technique with a normal precursor mass transport. The quality of the films is controlled by adjusting the carrier gas flow rate and the precursor feed rate.

  18. A novel chemically selective siloxane polymer for chemical vapor sensing

    NASA Astrophysics Data System (ADS)

    Huang, Jia; Jiang, Yadong; Du, Xiaosong; Bi, Juan

    2010-10-01

    A new hydrogen-bond acidic carbosiloxane polymer for quartz crystal microbalance sensors (QCMs) application was synthesized via O-alkylation, Claisen rearrange, hydrosilylation reaction and functionalized the polysiloxane with trifluoroacetone groups (TFA). The trifluoroisopropanol functionalized polysiloxane was characterized by FT-IR and 1HNMR. And this novel siloxane polymer was coated onto AT-cut 8 MHz QCM sensors to investigate its gas sensitive responses to the organophosphorus nerve agent stimulant dimethyl methylphosphonate (DMMP) vapor as well as other interfering organic vapors. The research work indicated that frequency shifts of the trifluoroisopropanol functionalized polysiloxane based QCM sensor to the DMMP vapor were completely linear, and with a regression coefficient of 0.9973 in the concentration range of 10-60 ppm. In addition, the sensitivity of the fabricated QCM sensors to DMMP was up to 10.64 Hz/ ppm, and much higher than the other interfering vapors, limits of detection (LODs) of the QCM sensors was 0.28 ppm, thus high selectivity to DMMP was demonstrated in this work.

  19. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    ERIC Educational Resources Information Center

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  20. A novel induction heater for chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Ong, C. W.; Wong, H. K.; Sin, K. S.; Yip, S. T.; Chik, K. P.

    1989-06-01

    We report how an induction cooker for household use can be modified for heating substrate or heating gases to high temperature in a chemical vapor deposition system. Only minor changes of the cooker are necessary. Stable substrate temperature as high as 900 °C was achieved with input power of about 1150 W.

  1. Chemical vapor deposition for automatic processing of integrated circuits

    NASA Technical Reports Server (NTRS)

    Kennedy, B. W.

    1980-01-01

    Chemical vapor deposition for automatic processing of integrated circuits including the wafer carrier and loading from a receiving air track into automatic furnaces and unloading on to a sending air track is discussed. Passivation using electron beam deposited quartz is also considered.

  2. Chemical-vapor deposition of silicon from silane

    NASA Technical Reports Server (NTRS)

    Hsu, G. C.; Lutwack, R.; Praturi, A. K.

    1979-01-01

    Report lists tables of standard free-energy change, equilibrium constant, and heat of reaction for chemical vapor deposition (CVD) of silicon from silane over temperature range of 100 to 1000 K. Data indicates silicon CVD may be a commercially economical process for production of silicon for solar arrays and other applications.

  3. Fabrication of a multifunctional carbon nanotube "cotton" yarn by the direct chemical vapor deposition spinning process.

    PubMed

    Zhong, Xiao-Hua; Li, Ya-Li; Feng, Jian-Min; Kang, Yan-Ru; Han, Shuai-Shuai

    2012-09-21

    A continuous cotton-like carbon nanotube fiber yarn, consisting of multiple threads of high purity double walled carbon nanotubes, was fabricated in a horizontal CVD gas flow reactor with water vapor densification by the direct chemical vapor deposition spinning process. The water vapor interaction leads to homogeneous shrinking of the CNT sock-like assembly in the gas flow. This allows well controlled continuous winding of the dense thread inside the reactor. The CNT yarn is quite thick (1-3 mm), has a highly porous structure (99%) while being mechanically strong and electrically conductive. The water vapor interaction leads to homogeneous oxidation of the CNTs, offering the yarn oxygen-functionalized surfaces. The unique structure and surface of the CNT yarn provide it multiple processing advantages and properties. It can be mechanically engineered into a dense yarn, infiltrated with polymers to form a composite and mixed with other yarns to form a blend, as demonstrated in this research. Therefore, this CNT yarn can be used as a "basic yarn" for various CNT based structural and functional applications. PMID:22864939

  4. Fabrication of a multifunctional carbon nanotube "cotton" yarn by the direct chemical vapor deposition spinning process.

    PubMed

    Zhong, Xiao-Hua; Li, Ya-Li; Feng, Jian-Min; Kang, Yan-Ru; Han, Shuai-Shuai

    2012-09-21

    A continuous cotton-like carbon nanotube fiber yarn, consisting of multiple threads of high purity double walled carbon nanotubes, was fabricated in a horizontal CVD gas flow reactor with water vapor densification by the direct chemical vapor deposition spinning process. The water vapor interaction leads to homogeneous shrinking of the CNT sock-like assembly in the gas flow. This allows well controlled continuous winding of the dense thread inside the reactor. The CNT yarn is quite thick (1-3 mm), has a highly porous structure (99%) while being mechanically strong and electrically conductive. The water vapor interaction leads to homogeneous oxidation of the CNTs, offering the yarn oxygen-functionalized surfaces. The unique structure and surface of the CNT yarn provide it multiple processing advantages and properties. It can be mechanically engineered into a dense yarn, infiltrated with polymers to form a composite and mixed with other yarns to form a blend, as demonstrated in this research. Therefore, this CNT yarn can be used as a "basic yarn" for various CNT based structural and functional applications.

  5. Chemical vapor deposition reactor. [providing uniform film thickness

    NASA Technical Reports Server (NTRS)

    Chern, S. S.; Maserjian, J. (Inventor)

    1977-01-01

    An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials.

  6. Chemical Vapor Deposition of Turbine Thermal Barrier Coatings

    NASA Technical Reports Server (NTRS)

    Haven, Victor E.

    1999-01-01

    Ceramic thermal barrier coatings extend the operating temperature range of actively cooled gas turbine components, therefore increasing thermal efficiency. Performance and lifetime of existing ceram ic coatings are limited by spallation during heating and cooling cycles. Spallation of the ceramic is a function of its microstructure, which is determined by the deposition method. This research is investigating metalorganic chemical vapor deposition (MOCVD) of yttria stabilized zirconia to improve performance and reduce costs relative to electron beam physical vapor deposition. Coatings are deposited in an induction-heated, low-pressure reactor at 10 microns per hour. The coating's composition, structure, and response to the turbine environment will be characterized.

  7. Single nitrogen vacancy centers in chemical vapor deposited diamond nanocrystals.

    PubMed

    Rabeau, J R; Stacey, A; Rabeau, A; Prawer, S; Jelezko, F; Mirza, I; Wrachtrup, J

    2007-11-01

    Nanodiamond crystals containing single color centers have been grown by chemical vapor deposition (CVD). The fluorescence from individual crystallites was directly correlated with crystallite size using a combined atomic force and scanning confocal fluorescence microscope. Under the conditions employed, the optimal size for single optically active nitrogen-vacancy (NV) center incorporation was measured to be 60-70 nm. The findings highlight a strong dependence of NV incorporation on crystal size, particularly with crystals less than 50 nm in size.

  8. Combustion chemical vapor desposited coatings for thermal barrier coating systems

    SciTech Connect

    Hampikian, J.M.; Carter, W.B.

    1995-10-01

    The new deposition process, combustion chemical vapor deposition, shows a great deal of promise in the area of thermal barrier coating systems. This technique produces dense, adherent coatings, and does not require a reaction chamber. Coatings can therefore be applied in the open atmosphere. The process is potentially suitable for producing high quality CVD coatings for use as interlayers between the bond coat and thermal barrier coating, and/or as overlayers, on top of thermal barrier coatings.

  9. Growth of zinc oxide by chemical vapor transport

    NASA Astrophysics Data System (ADS)

    Mikami, Makoto; Eto, Toshiaki; Wang, JiFeng; Masa, Yoshihiko; Isshiki, Minoru

    2005-04-01

    ZnO crystal growth by chemical vapor transport (CVT) is carried out using carbon as a transport agent. Under the optimum ΔT and growth temperature, a single crystal was grown. The carbon contamination is not detected by SIMS measurements and all the crystals are orange-red colored. It is claimed that the orange-red color is attributed to the shift of stoichiometry to zinc rich atmosphere.

  10. Research on chemical vapor deposition processes for advanced ceramic coatings

    NASA Technical Reports Server (NTRS)

    Rosner, Daniel E.

    1993-01-01

    Our interdisciplinary background and fundamentally-oriented studies of the laws governing multi-component chemical vapor deposition (VD), particle deposition (PD), and their interactions, put the Yale University HTCRE Laboratory in a unique position to significantly advance the 'state-of-the-art' of chemical vapor deposition (CVD) R&D. With NASA-Lewis RC financial support, we initiated a program in March of 1988 that has led to the advances described in this report (Section 2) in predicting chemical vapor transport in high temperature systems relevant to the fabrication of refractory ceramic coatings for turbine engine components. This Final Report covers our principal results and activities for the total NASA grant of $190,000. over the 4.67 year period: 1 March 1988-1 November 1992. Since our methods and the technical details are contained in the publications listed (9 Abstracts are given as Appendices) our emphasis here is on broad conclusions/implications and administrative data, including personnel, talks, interactions with industry, and some known applications of our work.

  11. Fabrication of commercial-scale fiber-reinforced hot-gas filters by chemical vapor deposition

    SciTech Connect

    White, L.R.

    1992-11-01

    Goal was to fabricate a filter for removing particulates from hot gases; principal applications would be in advanced utility processes such as pressurized fluidized bed combustion or coal gasification combined cycle systems. Filters were made in two steps: make a ceramic fiber preform and coat it with SiC by chemical vapor infiltration (CVD). The most promising construction was felt/filament wound. Light, tough ceramic composite filters can be made; reinforcement by continuous fibers is needed to avoid brittleness. Direct metal to filter contact does not damage the top which simplifies installation. However, much of the filter surface of felt/filament wound structures is closed over by the CVD coating, and the surface is rough and subject to delamination. Recommendations are given for improving the filters.

  12. Model for the Vaporization of Mixed Organometallic Compounds in the Metalorganic Chemical Vapor Deposition of High Temperature Superconducting Films

    NASA Technical Reports Server (NTRS)

    Meng, Guangyao; Zhou, Gang; Schneider, Roger L.; Sarma, Bimal K.; Levy, Moises

    1993-01-01

    A model of the vaporization and mass transport of mixed organometallics from a single source for thin film metalorganic chemical vapor deposition is presented. A stoichiometric gas phase can be obtained from a mixture of the organometallics in the desired mole ratios, in spite of differences in the volatilities of the individual compounds. Proper film composition and growth rates are obtained by controlling the velocity of a carriage containing the organometallics through the heating zone of a vaporizer.

  13. Chemical vapor deposition modeling for high temperature materials

    NASA Technical Reports Server (NTRS)

    Goekoglu, Sueleyman

    1992-01-01

    The formalism for the accurate modeling of chemical vapor deposition (CVD) processes has matured based on the well established principles of transport phenomena and chemical kinetics in the gas phase and on surfaces. The utility and limitations of such models are discussed in practical applications for high temperature structural materials. Attention is drawn to the complexities and uncertainties in chemical kinetics. Traditional approaches based on only equilibrium thermochemistry and/or transport phenomena are defended as useful tools, within their validity, for engineering purposes. The role of modeling is discussed within the context of establishing the link between CVD process parameters and material microstructures/properties. It is argued that CVD modeling is an essential part of designing CVD equipment and controlling/optimizing CVD processes for the production and/or coating of high performance structural materials.

  14. Chemical Vapor Deposited Zinc Sulfide. SPIE Press Monograph

    SciTech Connect

    McCloy, John S.; Tustison, Randal W.

    2013-04-22

    Zinc sulfide has shown unequaled utility for infrared windows that require a combination of long-wavelength infrared transparency, mechanical durability, and elevated-temperature performance. This book reviews the physical properties of chemical vapor deposited ZnS and their relationship to the CVD process that produced them. An in-depth look at the material microstructure is included, along with a discussion of the material's optical properties. Finally, because the CVD process itself is central to the development of this material, a brief history is presented.

  15. Plasma-enhanced chemical vapor deposition of multiwalled carbon nanofibers

    NASA Technical Reports Server (NTRS)

    Matthews, Kristopher; Cruden, Brett A.; Chen, Bin; Meyyappan, M.; Delzeit, Lance

    2002-01-01

    Plasma-enhanced chemical vapor deposition is used to grow vertically aligned multiwalled carbon nanofibers (MWNFs). The graphite basal planes in these nanofibers are not parallel as in nanotubes; instead they exhibit a small angle resembling a stacked cone arrangement. A parametric study with varying process parameters such as growth temperature, feedstock composition, and substrate power has been conducted, and these parameters are found to influence the growth rate, diameter, and morphology. The well-aligned MWNFs are suitable for fabricating electrode systems in sensor and device development.

  16. Microwave transmission properties of chemical vapor deposition graphene

    NASA Astrophysics Data System (ADS)

    Wu, Yunqiu; Xu, Yuehang; Wang, Zegao; Xu, Cao; Tang, Zongxi; Chen, Yuanfu; Xu, Ruimin

    2012-07-01

    In this letter, the microwave transmission properties of graphene grown by the chemical vapor deposition are studied by using a multiple-layer coplanar-waveguide transmission-line based measurement method. Remarkable energy loss and phase shift have been observed in graphene from the measured scattering parameters through vector network analyzer. The effective permittivity is deduced by partial-capacitance technique, and the complex permittivity of graphene are extracted in the frequency range of 500 MHz to 6 GHz. Different from conventional dielectric material, the permittivity of graphene shows frequency-dependent below 4 GHz and has an magnitude larger than 104 for both real and imaginary parts.

  17. Combustion chemical vapor deposited coatings for thermal barrier coating systems

    SciTech Connect

    Hampikian, J.M.; Carter, W.B.

    1995-12-31

    The new deposition process, combustion chemical vapor deposition, shows a great deal of promise in the area of thermal barrier coating systems. This technique produces dense, adherent coatings, and does not require a reaction chamber. Coatings can therefore be applied in the open atmosphere. The process is potentially suitable for producing high quality CVD coatings for use as interlayers between the bond coat and thermal barrier coating, and/or as overlayers, on top of thermal barrier coatings. In this report, the evaluation of alumina and ceria coatings on a nickel-chromium alloy is described.

  18. Spectroscopic Observation of Chemical Interaction Between Impact-induced Vapor Clouds and the Ambient Atmosphere

    NASA Technical Reports Server (NTRS)

    Sugita, S.; Heineck, J. T.; Schultz, P. H.

    2000-01-01

    Chemical reactions within impact-induced vapor clouds were observed in laboratory experiments using a spectroscopic method. The results indicate that projectile-derived carbon-rich vapor reacts intensively with atmospheric nitrogen.

  19. Chemical vapor deposited diamond-on-diamond powder composites (LDRD final report)

    SciTech Connect

    Panitz, J.K.; Hsu, W.L.; Tallant, D.R.; McMaster, M.; Fox, C.; Staley, D.

    1995-12-01

    Densifying non-mined diamond powder precursors with diamond produced by chemical vapor infiltration (CVI) is an attractive approach for forming thick diamond deposits that avoids many potential manufacturability problems associated with predominantly chemical vapor deposition (CVD) processes. The authors developed techniques for forming diamond powder precursors and densified these precursors in a hot filament-assisted reactor and a microwave plasma-assisted reactor. Densification conditions were varied following a fractional factorial statistical design. A number of conclusions can be drawn as a result of this study. High density diamond powder green bodies that contain a mixture of particle sizes solidify more readily than more porous diamond powder green bodies with narrow distributions of particle sizes. No composite was completely densified although all of the deposits were densified to some degree. The hot filament-assisted reactor deposited more material below the exterior surface, in the interior of the powder deposits; in contrast, the microwave-assisted reactor tended to deposit a CVD diamond skin over the top of the powder precursors which inhibited vapor phase diamond growth in the interior of the powder deposits. There were subtle variations in diamond quality as a function of the CVI process parameters. Diamond and glassy carbon tended to form at the exterior surface of the composites directly exposed to either the hot filament or the microwave plasma. However, in the interior, e.g. the powder/substrate interface, diamond plus diamond-like-carbon formed. All of the diamond composites produced were grey and relatively opaque because they contained flawed diamond, diamond-like-carbon and glassy carbon. A large amount of flawed and non-diamond material could be removed by post-CVI oxygen heat treatments. Heat treatments in oxygen changed the color of the composites to white.

  20. Condensable chemical vapors for sterilization of freeze dryers.

    PubMed

    Bardat, A; Schmitthaeusler, R; Renzi, E

    1996-01-01

    Sterilization of freeze dryers is usually performed by subjecting them to saturated steam under pressure by steam (121 degrees C, 2 bar a., 30 minutes). In order to avoid such stressful conditions, another process was designed on the basis of a strong oxidizing mixture of condensable chemical vapors, consisting of ozone and hydrogen peroxide in acidic conditions. This process works at sub-zero temperatures up to 30 degrees C and under negative pressure. 10(6), inoculum of standard biological indicators as well as wild types of bioburden were easely sterilized from 2 minutes up to 10 minutes. Other parameters were studied, in order to optimize the main process conditions: temperature, pressure, concentration of chemicals, type of micro-organisms and their environmental surroundings. PMID:8935775

  1. Modeling of InP metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Black, Linda R.; Clark, Ivan O.; Kui, J.; Jesser, William A.

    1991-01-01

    The growth of InP by metalorganic chemical vapor deposition (MOCVD) in a horizontal reactor is being modeled with a commercially available computational fluid dynamics modeling code. The mathematical treatment of the MOCVD process has four primary areas of concern: 1) transport phenomena, 2) chemistry, 3) boundary conditions, and 4) numerical solution methods. The transport processes involved in CVD are described by conservation of total mass, momentum, energy, and atomic species. Momentum conservation is described by a generalized form of the Navier-Stokes equation for a Newtonian fluid and laminar flow. The effect of Soret diffusion on the transport of particular chemical species and on the predicted deposition rate is examined. Both gas-phase and surface chemical reactions are employed in the model. Boundary conditions are specified at the inlet and walls of the reactor for temperature, fluid flow and chemical species. The coupled set of equations described above is solved by a finite difference method over a nonuniform rectilinear grid in both two and three dimensions. The results of the 2-D computational model is presented for gravity levels of zero- and one-g. The predicted growth rates at one-g are compared to measured growth rates on fused silica substrates.

  2. Minefield edge detection using a novel chemical vapor sensing technique

    NASA Astrophysics Data System (ADS)

    Fisher, Mark E.; Sikes, John

    2003-09-01

    Nomadics has developed a novel sensing technology that detects the chemical signature of explosives emanating from buried landmines. Canines have demonstrated the ability to detect these signatures, but use of canines for this task presents a number of logistical and physical limitations that can be overcome by use of chemical sensors. Nomadics is the exclusive licensee of novel amplifying fluorescent polymer materials developed by the Massachusetts Institute of Technology (MIT). These materials enable detection of ultra-trace concentrations of nitroaromatic compounds such as TNT, the most commonly utilized explosive in the production of landmines. When vapors of nitroaromatics are presented to the sensor, the fluorescent polymers emit light at a greatly reduced intensity, a property that enables rapid detection of trace quantities of explosives using relatively low-cost electronics and optics. Studies performed by Jenkins et al suggest that the chemical signature of a landmine is heterogeneous and can be dispersed a significant distance from the location of the mine. Because the signature is not highly localized and is not characterized by a well-defined concentration gradient, the sensor may have difficulty indicating the exact position of a mine, especially in high-density minefields. Conversely, if the chemical signature extends some distance from the mine position, the sensor may have utility in detecting the edges of minefields. In combat scenarios, this will allow commanders to select safe paths for personnel and vehicles. This paper will present the latest findings related to minefield edge detection at several test sites.

  3. Chemiluminescent chemical sensors for inorganic and organic vapors

    SciTech Connect

    Collins, G.E.; Rose-Pehrsson, S.L.

    1995-12-31

    Chemiluminescent, chemical sensors for inorganic and organic vapors are being investigated via the immobilization of 3-aminophthalhydrazide (luminol) within hydrogels and polymeric, sorbent coatings. The films are supported behind a teflon membrane and positioned in front of a photomultiplier tube, permitting the sensitive detection of numerous toxic vapors. Some selectivity has been tailored into these devices by careful selection of the polymer type, pH and metal catalyst incorporated within the film. The incorporation of luminol and Fe(3) within a polyvinylalcohol hydrogel gave a film with superior sensitivity toward NO{sub 2} (detection limit of 0.46 ppb and a response time on the order of seconds). The use of the hydrogel matrix helped eliminate humidity problems associated with other polymeric films. Other chemiluminescent thin films prepared have demonstrated the detection of ppb levels of SO{sub 2}(g) and hydrazine, N{sub 2}H{sub 4}(g). Recently, the authors have begun investigating the incorporation of a heated Pt filament into the inlet line as a pre-oxidative step prior to passage of the gas stream across the teflon membrane. This has permitted the sensitive detection of ppm levels of CCl{sub 4}(g), CHCl{sub 3}(g) and CH{sub 2}Cl{sub 2}(g).

  4. Modeling and Simulation of Plasma Enhanced Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Smith, Aaron; Bett, Dominic; Cunningham, Monisha; Sen, Sudip

    2015-04-01

    Plasma Enhanced Chemical Vapor Deposition (PECVD) is a process used to deposit thin films from a gas state (vapor) to a solid state on a substrate. Recent study from the X-ray diffraction spectra of SnO2 films deposited as a function of RF power apparently indicates that RF power is playing a stabilizing role and hence in the better deposition. The results show that the RF power results in smoother morphology, improved crystallinity, and lower sheet resistance value in the PECVD process. The PECVD processing allows deposition at lower temperatures, which is often critical in the manufacture of semiconductors. In this talk we will address two aspects of the problem, first to develop a model to study the mechanism of how the PECVD is effected by the RF power, and second to actually simulate the effect of RF power on PECVD. As the PECVD is a very important component of the plasma processing technology with many applications in the semiconductor technology and surface science, the research proposed here has the prospect to revolutionize the plasma processing technology through the stabilizing role of the RF power.

  5. Chemical vapor deposition coatings for oxidation protection of titanium alloys

    NASA Technical Reports Server (NTRS)

    Cunnington, G. R.; Robinson, J. C.; Clark, R. K.

    1991-01-01

    Results of an experimental investigation of the oxidation protection afforded to Ti-14Al-21Nb and Ti-14Al-23Nb-2V titanium aluminides and Ti-17Mo-3Al-3Nb titanium alloy by aluminum-boron-silicon and boron-silicon coatings are presented. These coatings are applied by a combination of physical vapor deposition (PVD) and chemical vapor deposition (CVD) processes. The former is for the application of aluminum, and the latter is for codeposition of boron and silicon. Coating thickness is in the range of 2 to 7 microns, and coating weights are 0.6 to 2.0 mg/sq cm. Oxidation testing was performed in air at temperatures to 1255 K in both static and hypersonic flow environments. The degree of oxidation protection provided by the coatings is determined from weight change measurements made during the testing and post test compositional analyses. Temperature-dependent total normal emittance data are also presented for four coating/substrate combinations. Both types of coatings provided excellent oxidation protection for the exposure conditions of this investigation. Total normal emittances were greater than 0.80 in all cases.

  6. Radio-frequency plasma chemical vapor deposition growth of diamond

    NASA Technical Reports Server (NTRS)

    Meyer, Duane E.; Dillon, Rodney O.; Woollam, John A.

    1989-01-01

    Plasma chemical vapor deposition (CVD) at 13.56 MHz has been used to produce diamond particles in two different inductively coupled systems with a mixture of methane and hydrogen. The effect of a diamondlike carbon (DLC) overcoating on silicon, niobium, and stainless-steel substrates has been investigated and in the case of silicon has been found to enhance particle formation as compared to uncoated polished silicon. In addition the use of carbon monoxide in hydrogen has been found to produce well-defined individual faceted particles as well as polycrystalline films on quartz and DLC coated silicon substrates. Plasma CVD is a competitive approach to production of diamond films. It has the advantage over microwave systems of being easily scaled to large volume and high power.

  7. Development and study of chemical vapor deposited tantalum base alloys

    NASA Technical Reports Server (NTRS)

    Meier, G. H.; Bryant, W. A.

    1976-01-01

    A technique for the chemical vapor deposition of alloys was developed. The process, termed pulsing, involves the periodic injection of reactant gases into a previously-evacuated reaction chamber where they blanket the substrate almost instantaneously. Formation of alternating layers of the alloy components and subsequent homogenization allows the formation of an alloy of uniform composition with the composition being determined by the duration and relative numbers of the various cycles. The technique has been utilized to produce dense alloys of uniform thickness and composition (Ta- 10 wt % W) by depositing alternating layers of Ta and W by the hydrogen reduction of TaCl5 and WCl6. A similar attempt to deposit a Ta - 8 wt % W - 2 wt% Hf alloy was unsuccessful because of the difficulty in reducing HfCl4 at temperatures below those at which gas phase nucleation of Ta and W occurred.

  8. Chemical Vapor Deposition at High Pressure in a Microgravity Environment

    NASA Technical Reports Server (NTRS)

    McCall, Sonya; Bachmann, Klaus; LeSure, Stacie; Sukidi, Nkadi; Wang, Fuchao

    1999-01-01

    In this paper we present an evaluation of critical requirements of organometallic chemical vapor deposition (OMCVD) at elevated pressure for a channel flow reactor in a microgravity environment. The objective of using high pressure is to maintain single-phase surface composition for materials that have high thermal decomposition pressure at their optimum growth temperature. Access to microgravity is needed to maintain conditions of laminar flow, which is essential for process analysis. Based on ground based observations we present an optimized reactor design for OMCVD at high pressure and reduced gravity. Also, we discuss non-intrusive real-time optical monitoring of flow dynamics coupled to homogeneous gas phase reactions, transport and surface processes. While suborbital flights may suffice for studies of initial stages of heteroepitaxy experiments in space are essential for a complete evaluation of steady-state growth.

  9. Creep of chemically vapor deposited SiC fibers

    NASA Technical Reports Server (NTRS)

    Dicarlo, J. A.

    1984-01-01

    The creep, thermal expansion, and elastic modulus properties for chemically vapor deposited SiC fibers were measured between 1000 and 1500 C. Creep strain was observed to increase logarithmically with time, monotonically with temperature, and linearly with tensile stress up to 600 MPa. The controlling activation energy was 480 + or - 20 kJ/mole. Thermal pretreatments near 1200 and 1450 C were found to significantly reduce fiber creep. These results coupled with creep recovery observations indicate that below 1400 C fiber creep is anelastic with neglible plastic component. This allowed a simple predictive method to be developed for describing fiber total deformation as a function of time, temperature, and stress. Mechanistic analysis of the property data suggests that fiber creep is the result of beta-SiC grain boundary sliding controlled by a small percent of free silicon in the grain boundaries.

  10. Chemical vapor deposition of low reflective cobalt (II) oxide films

    NASA Astrophysics Data System (ADS)

    Amin-Chalhoub, Eliane; Duguet, Thomas; Samélor, Diane; Debieu, Olivier; Ungureanu, Elisabeta; Vahlas, Constantin

    2016-01-01

    Low reflective CoO coatings are processed by chemical vapor deposition from Co2(CO)8 at temperatures between 120 °C and 190 °C without additional oxygen source. The optical reflectivity in the visible and near infrared regions stems from 2 to 35% depending on deposition temperature. The combination of specific microstructural features of the coatings, namely a fractal "cauliflower" morphology and a grain size distribution more or less covering the near UV and IR wavelength ranges enhance light scattering and gives rise to a low reflectivity. In addition, the columnar morphology results in a density gradient in the vertical direction that we interpret as a refractive index gradient lowering reflectivity further down. The coating formed at 180 °C shows the lowest average reflectivity (2.9%), and presents an interesting deep black diffuse aspect.

  11. Low Temperature Chemical Vapor Deposition Of Thin Film Magnets

    DOEpatents

    Miller, Joel S.; Pokhodnya, Kostyantyn I.

    2003-12-09

    A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

  12. Synthesis of mullite coatings by chemical vapor deposition

    SciTech Connect

    Mulpuri, R.P.; Auger, M.; Sarin, V.K.

    1996-08-01

    Formation of mullite on ceramic substrates via chemical vapor deposition was investigated. Mullite is a solid solution of Al{sub 2}O{sub 3} and SiO{sub 2} with a composition of 3Al{sub 2}O{sub 3}{circ}2SiO{sub 2}. Thermodynamic calculations performed on the AlCl{sub 3}-SiCl{sub 4}-CO{sub 2}-H{sub 2} system were used to construct equilibrium CVD phase diagrams. With the aid of these diagrams and consideration of kinetic rate limiting factors, initial process parameters were determined. Through process optimization, crystalline CVD mullite coatings have been successfully grown on SiC and Si{sub 3}N{sub 4} substrates. Results from the thermodynamic analysis, process optimization, and effect of various process parameters on deposition rate and coating morphology are discussed.

  13. Chemical vapor deposition fluid flow simulation modelling tool

    NASA Technical Reports Server (NTRS)

    Bullister, Edward T.

    1992-01-01

    Accurate numerical simulation of chemical vapor deposition (CVD) processes requires a general purpose computational fluid dynamics package combined with specialized capabilities for high temperature chemistry. In this report, we describe the implementation of these specialized capabilities in the spectral element code NEKTON. The thermal expansion of the gases involved is shown to be accurately approximated by the low Mach number perturbation expansion of the incompressible Navier-Stokes equations. The radiative heat transfer between multiple interacting radiating surfaces is shown to be tractable using the method of Gebhart. The disparate rates of reaction and diffusion in CVD processes are calculated via a point-implicit time integration scheme. We demonstrate the use above capabilities on prototypical CVD applications.

  14. Selective vapor detection of an integrated chemical sensor array

    NASA Astrophysics Data System (ADS)

    Jung, Youngmo; Kim, Young Jun; Choi, Jaebin; Lim, Chaehyun; Shin, Beom Ju; Moon, Hi Gyu; Lee, Taikjin; Kim, Jae Hun; Seo, Minah; Kang, Chong Yun; Jun, Seong Chan; Lee, Seok; Kim, Chulki

    2015-07-01

    Graphene is a promising material for vapor sensor applications because of its potential to be functionalized for specific chemical gases. In this work, we present a graphene gas sensor that uses single-stranded DNA (ssDNA) molecules as its sensing agent. We investigate the characteristics of graphene field effect transistors (FETs) coated with different ssDNAs. The sensitivity and recovery rate for a specific gas are modified according to the differences in the DNA molecules' Guanine (G) and Cytosine (C) content. ssDNA-functionalized devices show a higher recovery rate compared to bare graphene devices. Pattern analysis of a 2-by-2 sensor array composed of graphene devices functionalized with different-sequence ssDNA enables identification of NH3, NO2, CO, SO2 using Principle Component Analysis (PCA).

  15. Characterization of Carbon Nanotubes Grown by Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Cochrane, J. C.; Zhu, Shen; Su, Ching-Hua; Lehoczky, S. L.; Rose, M. Franklin (Technical Monitor)

    2001-01-01

    Since the superior properties of multi-wall carbon nanotubes (MWCNT) could improve numerous devices such as electronics and sensors, many efforts have been made in investigating the growth mechanism of MWCNT to synthesize high quality MWCNT. Chemical vapor deposition (CVD) is widely used for MWCNT synthesis, and scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS) are useful methods for analyzing the structure, morphology and composition of MWCNT. Temperature and pressure are two important growth parameters for fabricating carbon nanotubes. In MWCNT growth by CVD, the plasma assisted method is normally used for low temperature growth. However a high temperature environment is required for thermal CVD. A systematic study of temperature and pressure-dependence is very helpful to understanding MWCNT growth. Transition metal particles are commonly used as catalysis in carbon nanotube growth. It is also interesting to know how temperature and pressure affect the interface of carbon species and catalyst particles

  16. Chemical and Magnetic Order in Vapor-Deposited Metal Films

    NASA Astrophysics Data System (ADS)

    Rooney, Peter Wiliam

    1995-01-01

    A stochastic Monte Carlo model of vapor deposition and growth of a crystalline, binary, A_3 B metallic alloy with a negative energy of mixing has been developed which incorporates deposition and surface diffusion in a physically correct manner and allows the simulation of deposition rates that are experimentally realizable. The effects of deposition rate and growth temperature on the development of short range order (SRO) in vapor-deposited films have been examined using this model. SRO in the simulated films increases with growth temperature up to the point at which the temperature corresponds to the energy of mixing, but we see no corresponding development of anisotropic SRO (preferential ordering of A-B pairs along the growth direction). Epitaxial (100) and (111) CoPt_3 films have been deposited over a range of growth temperatures from -50^circ C to 800^circC. Curie temperature (T_{rm c}) and saturation magnetization are dramatically enhanced in those films grown near 400^circ C over the values expected for the chemically homogeneous alloy. Magnetization data indicates that the high T _{rm c} films are inhomogeneous. These phenomena are interpreted as evidence of a previously unobserved magnetically driven miscibility gap in the Co-Pt phase diagram. Films grown near 400^circ C exhibit large uniaxial perpendicular magnetic anisotropy that cannot be accounted for by strain. The observed anisotropy coincides with the chemical phase separation and it seems likely that these two phenomena are related. Long range order (LRO) in the as-deposited films peaks at a growth temperature of 630^circC and then decreases with decreasing growth temperature. The decrease in LRO is either due to kinetic frustration or to competition from magnetically induced Co clustering. Theoretical phase diagrams based on the appropriate Blume-Emery-Griffiths Hamiltonian suggest the latter.

  17. Direct synthesis of large area graphene on insulating substrate by gallium vapor-assisted chemical vapor deposition

    SciTech Connect

    Murakami, Katsuhisa Hiyama, Takaki; Kuwajima, Tomoya; Fujita, Jun-ichi; Tanaka, Shunsuke; Hirukawa, Ayaka; Kano, Emi; Takeguchi, Masaki

    2015-03-02

    A single layer of graphene with dimensions of 20 mm × 20 mm was grown directly on an insulating substrate by chemical vapor deposition using Ga vapor catalysts. The graphene layer showed highly homogeneous crystal quality over a large area on the insulating substrate. The crystal quality of the graphene was measured by Raman spectroscopy and was found to improve with increasing Ga vapor density on the reaction area. High-resolution transmission electron microscopy observations showed that the synthesized graphene had a perfect atomic-scale crystal structure within its grains, which ranged in size from 50 nm to 200 nm.

  18. Graphene-Based Chemical Vapor Sensors for Electronic Nose Applications

    NASA Astrophysics Data System (ADS)

    Nallon, Eric C.

    An electronic nose (e-nose) is a biologically inspired device designed to mimic the operation of the olfactory system. The e-nose utilizes a chemical sensor array consisting of broadly responsive vapor sensors, whose combined response produces a unique pattern for a given compound or mixture. The sensor array is inspired by the biological function of the receptor neurons found in the human olfactory system, which are inherently cross-reactive and respond to many different compounds. The use of an e-nose is an attractive approach to predict unknown odors and is used in many fields for quantitative and qualitative analysis. If properly designed, an e-nose has the potential to adapt to new odors it was not originally designed for through laboratory training and algorithm updates. This would eliminate the lengthy and costly R&D costs associated with materiel and product development. Although e-nose technology has been around for over two decades, much research is still being undertaken in order to find new and more diverse types of sensors. Graphene is a single-layer, 2D material comprised of carbon atoms arranged in a hexagonal lattice, with extraordinary electrical, mechanical, thermal and optical properties due to its 2D, sp2-bonded structure. Graphene has much potential as a chemical sensing material due to its 2D structure, which provides a surface entirely exposed to its surrounding environment. In this configuration, every carbon atom in graphene is a surface atom, providing the greatest possible surface area per unit volume, so that electron transport is highly sensitive to adsorbed molecular species. Graphene has gained much attention since its discovery in 2004, but has not been realized in many commercial electronics. It has the potential to be a revolutionary material for use in chemical sensors due to its excellent conductivity, large surface area, low noise, and versatile surface for functionalization. In this work, graphene is incorporated into a

  19. Self-organization and nanostructure formation in chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Walgraef, Daniel

    2013-10-01

    When thin films are grown on a substrate by chemical vapor deposition, the evolution of the first deposited layers may be described, on mesoscopic scales, by dynamical models of the reaction-diffusion type. For monatomic layers, such models describe the evolution of atomic coverage due to the combined effect of reaction terms representing adsorption-desorption and chemical processes and nonlinear diffusion terms that are of the Cahn-Hilliard type. This combination may lead, below a critical temperature, to the instability of uniform deposited layers. This instability triggers the formation of nanostructures corresponding to regular spatial variations of substrate coverage. Patterns wavelengths and symmetries are selected by dynamical variables and not by variational arguments. According to the balance between reaction- and diffusion-induced nonlinearities, a succession of nanostructures including hexagonal arrays of dots, stripes, and localized structures of various types may be obtained. These structures may initiate different growth mechanisms, including Volmer-Weber and Frank-Van der Merwe types of growth. The relevance of this approach to the study of deposited layers of different species is discussed.

  20. Conversion Coatings for Aluminum Alloys by Chemical Vapor Deposition Mechanisms

    NASA Technical Reports Server (NTRS)

    Reye, John T.; McFadden, Lisa S.; Gatica, Jorge E.; Morales, Wilfredo

    2004-01-01

    With the rise of environmental awareness and the renewed importance of environmentally friendly processes, the United States Environmental Protection Agency has targeted surface pre-treatment processes based on chromates. Indeed, this process has been subject to regulations under the Clean Water Act as well as other environmental initiatives, and there is today a marked movement to phase the process out in the near future. Therefore, there is a clear need for new advances in coating technology that could provide practical options for replacing present industrial practices. Depending on the final application, such coatings might be required to be resistant to corrosion, act as chemically resistant coatings, or both. This research examined a chemical vapor deposition (CVD) mechanism to deposit uniform conversion coatings onto aluminum alloy substrates. Robust protocols based on solutions of aryl phosphate ester and multi-oxide conversion coating (submicron) films were successfully grown onto the aluminum alloy samples. These films were characterized by X-ray Photoelectron Spectroscopy (XPS). Preliminary results indicate the potential of this technology to replace aqueous-based chromate processes.

  1. Self-organization and nanostructure formation in chemical vapor deposition.

    PubMed

    Walgraef, Daniel

    2013-10-01

    When thin films are grown on a substrate by chemical vapor deposition, the evolution of the first deposited layers may be described, on mesoscopic scales, by dynamical models of the reaction-diffusion type. For monatomic layers, such models describe the evolution of atomic coverage due to the combined effect of reaction terms representing adsorption-desorption and chemical processes and nonlinear diffusion terms that are of the Cahn-Hilliard type. This combination may lead, below a critical temperature, to the instability of uniform deposited layers. This instability triggers the formation of nanostructures corresponding to regular spatial variations of substrate coverage. Patterns wavelengths and symmetries are selected by dynamical variables and not by variational arguments. According to the balance between reaction- and diffusion-induced nonlinearities, a succession of nanostructures including hexagonal arrays of dots, stripes, and localized structures of various types may be obtained. These structures may initiate different growth mechanisms, including Volmer-Weber and Frank-Van der Merwe types of growth. The relevance of this approach to the study of deposited layers of different species is discussed. PMID:24229187

  2. Nanostructure Engineered Chemical Sensors for Hazardous Gas and Vapor Detection

    NASA Technical Reports Server (NTRS)

    Li, Jing; Lu, Yijiang

    2005-01-01

    A nanosensor technology has been developed using nanostructures, such as single walled carbon nanotubes (SWNTs) and metal oxides nanowires or nanobelts, on a pair of interdigitated electrodes (IDE) processed with a silicon based microfabrication and micromachining technique. The IDE fingers were fabricated using thin film metallization techniques. Both in-situ growth of nanostructure materials and casting of the nanostructure dispersions were used to make chemical sensing devices. These sensors have been exposed to hazardous gases and vapors, such as acetone, benzene, chlorine, and ammonia in the concentration range of ppm to ppb at room temperature. The electronic molecular sensing in our sensor platform can be understood by electron modulation between the nanostructure engineered device and gas molecules. As a result of the electron modulation, the conductance of nanodevice will change. Due to the large surface area, low surface energy barrier and high thermal and mechanical stability, nanostructured chemical sensors potentially can offer higher sensitivity, lower power consumption and better robustness than the state-of-the-art systems, which make them more attractive for defense and space applications. Combined with MEMS technology, light weight and compact size sensors can be made in wafer scale with low cost.

  3. Correlation of chemical evaporation rate with vapor pressure.

    PubMed

    Mackay, Donald; van Wesenbeeck, Ian

    2014-09-01

    A new one-parameter correlation is developed for the evaporation rate (ER) of chemicals as a function of molar mass (M) and vapor pressure (P) that is simpler than existing correlations. It applies only to liquid surfaces that are unaffected by the underlying solid substrate as occurs in the standard ASTM evaporation rate test and to quiescent liquid pools. The relationship has a sounder theoretical basis than previous correlations because ER is correctly correlated with PM rather than P alone. The inclusion of M increases the slope of previous log ER versus log P regressions to a value close to 1.0 and yields a simpler one-parameter correlation, namely, ER (μg m(-1) h(-1)) = 1464P (Pa) × M (g mol(-1)). Applications are discussed for the screening level assessment and ranking of chemicals for evaporation rate, such as pesticides, fumigants, and hydrocarbon carrier fluids used in pesticide formulations, liquid consumer products used indoors, and accidental spills of liquids. The mechanistic significance of the single parameter as a mass-transfer coefficient or velocity is discussed.

  4. Advanced deposition model for thermal activated chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Cai, Dang

    Thermal Activated Chemical Vapor Deposition (TACVD) is defined as the formation of a stable solid product on a heated substrate surface from chemical reactions and/or dissociation of gaseous reactants in an activated environment. It has become an essential process for producing solid film, bulk material, coating, fibers, powders and monolithic components. Global market of CVD products has reached multi billions dollars for each year. In the recent years CVD process has been extensively used to manufacture semiconductors and other electronic components such as polysilicon, AlN and GaN. Extensive research effort has been directed to improve deposition quality and throughput. To obtain fast and high quality deposition, operational conditions such as temperature, pressure, fluid velocity and species concentration and geometry conditions such as source-substrate distance need to be well controlled in a CVD system. This thesis will focus on design of CVD processes through understanding the transport and reaction phenomena in the growth reactor. Since the in situ monitor is almost impossible for CVD reactor, many industrial resources have been expended to determine the optimum design by semi-empirical methods and trial-and-error procedures. This approach has allowed the achievement of improvements in the deposition sequence, but begins to show its limitations, as this method cannot always fulfill the more and more stringent specifications of the industry. To resolve this problem, numerical simulation is widely used in studying the growth techniques. The difficulty of numerical simulation of TACVD crystal growth process lies in the simulation of gas phase and surface reactions, especially the latter one, due to the fact that very limited kinetic information is available in the open literature. In this thesis, an advanced deposition model was developed to study the multi-component fluid flow, homogeneous gas phase reactions inside the reactor chamber, heterogeneous surface

  5. Lattice Matched Iii-V IV Semiconductor Heterostructures: Metalorganic Chemical Vapor Deposition and Remote Plasma Enhanced Chemical Vapor Deposition.

    NASA Astrophysics Data System (ADS)

    Choi, Sungwoo

    1992-01-01

    This thesis describes the growth and characterization of wide gap III-V compound semiconductors such as aluminum gallium arsenide (Al_{rm x} Ga_{rm 1-x}As), gallium nitride (GaN), and gallium phosphide (GaP), deposited by the metalorganic chemical vapor deposition (MOCVD) and remote plasma enhanced chemical vapor deposition (Remote PECVD). In the first part of the thesis, the optimization of GaAs and Al_{rm x}Ga _{rm 1-x}As hetero -epitaxial layers on Ge substrates is described in the context of the application in the construction of cascade solar cells. The emphasis on this study is on the trade-offs in the choice of the temperature related to increasing interdiffusion/autodoping and increasing perfection of the epilayer with increasing temperature. The structural, chemical, optical, and electrical properties of the heterostructures are characterized by x-ray rocking curve measurement, scanning electron microscopy (SEM), electron beam induced current (EBIC), cross-sectional transmission electron microscopy (X-TEM), Raman spectroscopy, secondary ion mass spectrometry (SIMS), and steady-state and time-resolved photoluminescence (PL). Based on the results of this work the optimum growth temperature is 720^circC. The second part of the thesis describes the growth of GaN and GaP layers on silicon and sapphire substrates and the homoepitaxy of GaP by remote PECVD. I have designed and built an ultra high vacuum (UHV) deposition system which includes: the gas supply system, the pumping system, the deposition chamber, the load-lock chamber, and the waste disposal system. The work on the deposition of GaN on Si and sapphire focuses onto the understanding of the growth kinetics. In addition, Auger electron spectroscopy (AES) for surface analysis, x-ray diffraction methods and microscopic analyses using SEM and TEM for structural characterization, infrared (IR) and ultraviolet (UV) absorption measurements for optical characterization, and electrical characterization results

  6. Combustion chemical vapor deposition: A novel thin-film deposition technique

    SciTech Connect

    Hunt, A.T.; Carter, W.B.; Cochran, J.K. Jr. )

    1993-07-12

    A new open-atmosphere chemical vapor deposition (CVD) technique has been developed that we term combustion chemical vapor deposition (CCVD). During CCVD a flame provides the necessary environment for the deposition of a dense film whose elemental constituents are derived from solution, vapor, or gas sources. Ag, YSZ, BaTiO[sub 3], YIG, YBa[sub 2]Cu[sub 3]O[sub [ital x

  7. Graphene by one-step chemical vapor deposition from ferrocene vapors: Properties and electrochemical evaluation

    NASA Astrophysics Data System (ADS)

    Pilatos, George; Perdikaki, Anna V.; Sapalidis, Andreas; Pappas, George S.; Giannakopoulou, Tatiana; Tsoutsou, Dimitra; Xenogiannopoulou, Evangelia; Boukos, Nikos; Dimoulas, Athanasios; Trapalis, Christos; Kanellopoulos, Nick K.; Karanikolos, Georgios N.

    2016-02-01

    Growth of few-layer graphene using ferrocene as precursor by chemical vapor deposition is reported. The growth did not involve any additional carbon or catalyst source or external hydrocarbon gases. Parametric investigation was performed using different conditions, namely, varying growth temperature from 600 to1000 °C, and growth duration from 5 min to 3 h, as well as using fast quenching or gradual cooling after the thermal treatment, in order to examine the effect on the quality of the produced graphene. The growth took place on silicon wafers and resulted, under optimal conditions, in formation of graphene with 2-3 layers and high graphitic quality, as evidenced by Raman spectroscopy, with characteristic full width at half maximum of the 2D band of 49.46 cm-1, and I2D/IG and ID/IG intensity ratios of 1.15 and 0.26, respectively. Atomic force microscopy and X-ray photoelectron spectroscopy were employed to further evaluate graphene characteristics and enlighten growth mechanism. Electrochemical evaluation of the developed material was performed using cyclic voltammetry, electrochemical impedance spectroscopy, and galvanostatic charge-discharge measurements.

  8. A handheld FTIR spectrometer with swappable modules for chemical vapor identification and surface swab analysis

    NASA Astrophysics Data System (ADS)

    Doherty, Walter J.; Falvey, Brendan; Vander Rhodes, Greg; Krasnobaev, Leo; Vachon, Kenneth

    2013-05-01

    ThermoFisher Scientific (formerly Ahura Scientific) has developed a handheld, modular detection and identification system for trace-level gases, chemical vapors and aerosols, and swab analyses. The sample chamber is a separate, removable module that can be tailored specifically to the users' needs. The vapor module can operate in three modes: ambient sampling, vapor/aerosol preconcentration, and direct injection. A swab module can be used to analyze thermally desorbed vapors from a sample swab. Limits of identification for vapors are as low as 0.1 ppm following a 15-min preconcentration period. The swab module can detect as little as 5 μg of TNT.

  9. Model of carrier dynamics in chemical vapor deposition diamond detectors

    SciTech Connect

    Borchi, Emilio; Lagomarsino, Stefano; Mersi, Stefano; Sciortino, Silvio

    2005-03-01

    We propose a quantitative model of electronic transport on the basis of a conductivity characterization of diamond-based sensors exposed to {beta} radiation. Some of the investigated samples have been irradiated with neutron up to a fluence of 2x10{sup 15}/cm{sup 2}. Radiation-induced current measurements have been performed to study the trapping and recombination of deep defect levels in the diamond band gap. We present a quantitative analysis of the passivation of deep traps and the release of carriers during thermal fading between consecutive exposures. We determine the density of trap states per unit volume and per unit energy and their capture cross sections. We also evaluate the modification of these parameters after neutron irradiation. Our analysis gives the cross sections of the traps involved in our measurements with an accuracy of 20-50%, which is far better than that attainable with thermal spectroscopy. Our results on the capture cross section of the recombination centers agree with relevant works presented in literature on natural IIa diamond. We propose that some defects are of the same nature in chemical vapor deposition diamond, but their concentration is far lower in the state-of-the-art material. We also study a modification of the trap level distribution after neutron irradiation. Finally we propose a rationale for the improvement obtained in recent years in the performances of top quality polycrystalline diamond sensors.

  10. Chemical vapor deposition of high T sub c superconductors

    NASA Technical Reports Server (NTRS)

    Webb, G. W.; Engelhardt, J. J.

    1978-01-01

    The results are reported of an investigation into the synthesis and properties of high temperature superconducting materials. A chemical vapor deposition apparatus was designed and built which is suitable for the preparation of multicomponent metal films This apparatus was used to prepare a series of high T sub c A-15 structure superconducting films in the binary system Nb-Ge. The effect on T sub c of a variety of substrate materials was investigated. An extensive series of ternary alloys were also prepared. Conditions allowing the brittle high T sub c (approximately 18 K) A-15 structure superconductor Nb3A1 to be prepared in a low T sub c but ductile form were found. Some of the ways that the ductile (bcc) form can be cold worked or machined are described. Measurements of rate of transformation of cold worked bcc material to the high T sub c A-15 structure with low temperature annealing are given. Preliminary measurements indicate that this material has attractive high field critical current densities.

  11. Optimized chemical vapor deposition of borophosphosilicate glass films

    NASA Astrophysics Data System (ADS)

    Kern, W.; Kurylo, W. A.; Tino, C. J.

    1985-06-01

    The optimization of atmospheric-pressure chemical vapor deposition (APCVD) of borophosphosilicate glass (BPSG) to produce glass films with few particle containments is discussed. The tests that were conducted in order to determine the optimum deposition temperature and proper oxygen/hydride ratio are explained. A decrease in deposition temperature and an increase in the oxygen/hydride ratio maximized the APCVD reaction. The techniques used to analyze the composition of BPSG after densification are described; the tests revealed that the elemental composition of BPSG was not altered by APCVD. An explanation of the film profiling technique used to determine the stability of BPSG films during processing is provided; BPSG films remain stable if they are densified or fused prior to the application of wet treatments. A comparison of conventional tube-furnace heating with rapid isothermal heating for fusion flow of BPSG is presented; fusion tapering by rapid heating was attained in 30 seconds at 175 C versus 30 minutes for tube heating.

  12. Chemical vapor deposition: Stable carbons from low-rank coals

    SciTech Connect

    Sharma, R.K.; Kulas, R.W.; Olson, E.S.

    1996-12-31

    A chemical vapor deposition (CVD) technique has been used to increase the oxidative stability of activated carbons. Activated carbons prepared from Gascoyne lignite (North Dakota) by thermal or potassium hydroxide activations were subjected to BCI, in helium at 727{degrees}C with or without benzene for a limited period of time, followed by annealing in helium at 900{degrees}C for three days. Untreated and acid-washed coal samples were used to assess the magnitude of the effect of mineral matter in the coal on the boron coating. The oxidative stability of the boron-modified carbons was determined from the decomposition curves obtained from the thermogravimetric analysis. Modification of the as-received, KOH-treated carbon yielded oxidatively stable carbons up to an initial temperature of 520{degrees}C, compared to about 350{degrees}C for the starting material. Similar results were obtained for the carbonized Gascoyne lignite. Sulfurous acid washing of the Gascoyne significantly enhanced the thermal stability (600{degrees}C) of the boron-modified carbon.

  13. Charged impurity-induced scatterings in chemical vapor deposited graphene

    SciTech Connect

    Li, Ming-Yang; Tang, Chiu-Chun; Ling, D. C.; Li, L. J.; Chi, C. C.; Chen, Jeng-Chung

    2013-12-21

    We investigate the effects of defect scatterings on the electric transport properties of chemical vapor deposited (CVD) graphene by measuring the carrier density dependence of the magneto-conductivity. To clarify the dominant scattering mechanism, we perform extensive measurements on large-area samples with different mobility to exclude the edge effect. We analyze our data with the major scattering mechanisms such as short-range static scatters, short-range screened Coulomb disorders, and weak-localization (WL). We establish that the charged impurities are the predominant scatters because there is a strong correlation between the mobility and the charge impurity density. Near the charge neutral point (CNP), the electron-hole puddles that are induced by the charged impurities enhance the inter-valley scattering, which is favorable for WL observations. Away from the CNP, the charged-impurity-induced scattering is weak because of the effective screening by the charge carriers. As a result, the local static structural defects govern the charge transport. Our findings provide compelling evidence for understanding the scattering mechanisms in graphene and pave the way for the improvement of fabrication techniques to achieve high-quality CVD graphene.

  14. Thirty Gigahertz Optoelectronic Mixing in Chemical Vapor Deposited Graphene.

    PubMed

    Montanaro, Alberto; Mzali, Sana; Mazellier, Jean-Paul; Bezencenet, Odile; Larat, Christian; Molin, Stephanie; Morvan, Loïc; Legagneux, Pierre; Dolfi, Daniel; Dlubak, Bruno; Seneor, Pierre; Martin, Marie-Blandine; Hofmann, Stephan; Robertson, John; Centeno, Alba; Zurutuza, Amaia

    2016-05-11

    The remarkable properties of graphene, such as broadband optical absorption, high carrier mobility, and short photogenerated carrier lifetime, are particularly attractive for high-frequency optoelectronic devices operating at 1.55 μm telecom wavelength. Moreover, the possibility to transfer graphene on a silicon substrate using a complementary metal-oxide-semiconductor-compatible process opens the ability to integrate electronics and optics on a single cost-effective chip. Here, we report an optoelectronic mixer based on chemical vapor-deposited graphene transferred on an oxidized silicon substrate. Our device consists in a coplanar waveguide that integrates a graphene channel, passivated with an atomic layer-deposited Al2O3 film. With this new structure, 30 GHz optoelectronic mixing in commercially available graphene is demonstrated for the first time. In particular, using a 30 GHz intensity-modulated optical signal and a 29.9 GHz electrical signal, we show frequency downconversion to 100 MHz. These results open promising perspectives in the domain of optoelectronics for radar and radio-communication systems. PMID:27043922

  15. Chemical Vapor Deposition of an Organic Magnet, Vanadium Tetracyanoethylene.

    PubMed

    Harberts, Megan; Lu, Yu; Yu, Howard; Epstein, Arthur J; Johnston-Halperin, Ezekiel

    2015-07-03

    Recent progress in the field of organic materials has yielded devices such as organic light emitting diodes (OLEDs) which have advantages not found in traditional materials, including low cost and mechanical flexibility. In a similar vein, it would be advantageous to expand the use of organics into high frequency electronics and spin-based electronics. This work presents a synthetic process for the growth of thin films of the room temperature organic ferrimagnet, vanadium tetracyanoethylene (V[TCNE]x, x~2) by low temperature chemical vapor deposition (CVD). The thin film is grown at <60 °C, and can accommodate a wide variety of substrates including, but not limited to, silicon, glass, Teflon and flexible substrates. The conformal deposition is conducive to pre-patterned and three-dimensional structures as well. Additionally this technique can yield films with thicknesses ranging from 30 nm to several microns. Recent progress in optimization of film growth creates a film whose qualities, such as higher Curie temperature (600 K), improved magnetic homogeneity, and narrow ferromagnetic resonance line-width (1.5 G) show promise for a variety of applications in spintronics and microwave electronics.

  16. A high temperature, plasma-assisted chemical vapor deposition system

    SciTech Connect

    Brusasco, R.M.; Britten, J.A.; Thorsness, C.B.; Scrivener, M.S.; Unites, W.G.; Campbell, J.H. ); Johnson, W.L. )

    1990-02-01

    We have designed and built a high-temperature, plasma-assisted, chemical vapor deposition system to deposit multilayer optical coatings of SiO{sub 2} and doped-SiO{sub 2} flat substrates. The coater concept and design is an outgrowth of our recent work with Schott Glasswerke demonstrating the use of plasma assisted CVD to prepare very high damage threshold optical coatings. The coater is designed to deposit up to several thousand alternating quarterwave layers of SiO{sub 2} and doped SiO{sub 2} substrate at deposition rates up to several microns per minute. The substrate is resistively heated to about 1000{degree}C during the deposition phase of the process. The plasma is driven by a 13.56 MHz RF unit capable of producing power densities of up to 140 W cm{sup {minus}3} in the reaction zone. The coater is designed to be adaptable to microwave generated plasmas, as well as RF. Reactant gas flow rates of up to 10 slm can be achieved at a 10 tar operating pressure. Reactants consist of O{sub 2}, SiCl{sub 4} and a volatile halogenated dopant. These gases react in the plasma volume producing SiO{sub 2} with dopant concentrations of up to a few percent. A variable dopant concentration is used to produce index differences between adjacent optical layers.

  17. Chemical vapor deposited silica coatings for solar mirror protection

    NASA Technical Reports Server (NTRS)

    Gulino, Daniel A.; Dever, Therese M.; Banholzer, William F.

    1988-01-01

    A variety of techniques is available to apply protective coatings to oxidation susceptible spacecraft components, and each has associated advantages and disadvantages. Film applications by means of chemical vapor deposition (CVD) has the advantage of being able to be applied conformally to objects of irregular shape. For this reason, a study was made of the oxygen plasma durability of thin film (less than 5000 A) silicon dioxide coatings applied by CVD. In these experiments, such coatings were applied to silver mirrors, which are strongly subject to oxidation, and which are proposed for use on the space station solar dynamic power system. Results indicate that such coatings can provide adequate protection without affecting the reflectance of the mirror. Scanning electron micrographs indicated that oxidation of the silver layer did occur at stress crack locations, but this did not affect the measured solar reflectances. Oxidation of the silver did not proceed beyond the immediate location of the crack. Such stress cracks did not occur in thinner silica flims, and hence such films would be desirable for this application.

  18. Synthesis Single Layer Transition Metal Dichalcogenides with Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Li, Yi-Hsien; Wang, Han; Yu, Lili; Fang, Wenjing; Palacios, Tomas; Li, Lain-Jong; Kong, Jing

    2013-03-01

    Recently, monolayers of layered transition metal dichalcogenides (LTMD), such as MX2 (M =Mo, W and X =S, Se), have been reported to exhibit significant spin-valley coupling and optoelectronic performances because of the unique structural symmetry and band structures. Monolayers in this class of materials offered a burgeoning field in fundamental physics, energy harvesting, electronics and optoelectronics. However, most studies to date are hindered with great challenges on the synthesis and transfer of high quality LTMD monolayers. Hence, a feasible synthetic process to overcome the challenges is essential. Here, we demonstrate the growth of high-quality MS2 (M =Mo, W) monolayers using ambient-pressure-chemical-vapor-deposition (APCVD) with the seeding of aromatic molecules. Electronic transport and optical performances of the as-grown MS2 monolayers are comparable to those of exfoliated MS2 monolayers. The growth of MS2 monolayer is achieved on various surfaces. Growth mechanism on the novel synthetic process is investigated. Understanding and better control of seeds for the novel growth on the class of materials may stimulate the progress in the emerging filed.

  19. Aerosol chemical vapor deposition of metal oxide films

    DOEpatents

    Ott, Kevin C.; Kodas, Toivo T.

    1994-01-01

    A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said FIELD OF THE INVENTION The present invention relates to the field of film coating deposition techniques, and more particularly to the deposition of multicomponent metal oxide films by aerosol chemical vapor deposition. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

  20. Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond

    NASA Astrophysics Data System (ADS)

    Zubkov, V. I.; Kucherova, O. V.; Bogdanov, S. A.; Zubkova, A. V.; Butler, J. E.; Ilyin, V. A.; Afanas'ev, A. V.; Vikharev, A. L.

    2015-10-01

    Precision admittance spectroscopy measurements over wide temperature and frequency ranges were carried out for chemical vapor deposition epitaxial diamond samples doped with various concentrations of boron. It was found that the experimentally detected boron activation energy in the samples decreased from 314 meV down to 101 meV with an increase of B/C ratio from 600 to 18000 ppm in the gas reactants. For the heavily doped samples, a transition from thermally activated valence band conduction to hopping within the impurity band (with apparent activation energy 20 meV) was detected at temperatures 120-150 K. Numerical simulation was used to estimate the impurity DOS broadening. Accurate determination of continuously altering activation energy, which takes place during the transformation of conduction mechanisms, was proposed by numerical differentiation of the Arrhenius plot. With increase of boron doping level the gradual decreasing of capture cross section from 3 × 10-13 down to 2 × 10-17 cm2 was noticed. Moreover, for the hopping conduction the capture cross section becomes 4 orders of magnitude less (˜2 × 10-20 cm2). At T > Troom in doped samples the birth of the second conductance peak was observed. We attribute it to a defect, related to the boron doping of the material.

  1. Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond

    SciTech Connect

    Zubkov, V. I. Kucherova, O. V.; Zubkova, A. V.; Ilyin, V. A.; Afanas'ev, A. V.; Bogdanov, S. A.; Vikharev, A. L.; Butler, J. E.

    2015-10-14

    Precision admittance spectroscopy measurements over wide temperature and frequency ranges were carried out for chemical vapor deposition epitaxial diamond samples doped with various concentrations of boron. It was found that the experimentally detected boron activation energy in the samples decreased from 314 meV down to 101 meV with an increase of B/C ratio from 600 to 18000 ppm in the gas reactants. For the heavily doped samples, a transition from thermally activated valence band conduction to hopping within the impurity band (with apparent activation energy 20 meV) was detected at temperatures 120–150 K. Numerical simulation was used to estimate the impurity DOS broadening. Accurate determination of continuously altering activation energy, which takes place during the transformation of conduction mechanisms, was proposed by numerical differentiation of the Arrhenius plot. With increase of boron doping level the gradual decreasing of capture cross section from 3 × 10{sup −13} down to 2 × 10{sup −17} cm{sup 2} was noticed. Moreover, for the hopping conduction the capture cross section becomes 4 orders of magnitude less (∼2 × 10{sup −20} cm{sup 2}). At T > T{sub room} in doped samples the birth of the second conductance peak was observed. We attribute it to a defect, related to the boron doping of the material.

  2. Growth of graphene underlayers by chemical vapor deposition

    SciTech Connect

    Fabiane, Mopeli; Khamlich, Saleh; Bello, Abdulhakeem; Dangbegnon, Julien; Momodu, Damilola; Manyala, Ncholu; Charlie Johnson, A. T.

    2013-11-15

    We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.

  3. Chemical vapor deposition of mesoporous graphene nanoballs for supercapacitor.

    PubMed

    Lee, Jung-Soo; Kim, Sun-I; Yoon, Jong-Chul; Jang, Ji-Hyun

    2013-07-23

    A mass-producible mesoporous graphene nanoball (MGB) was fabricated via a precursor-assisted chemical vapor deposition (CVD) technique for supercapacitor application. Polystyrene balls and reduced iron created under high temperature and a hydrogen gas environment provide a solid carbon source and a catalyst for graphene growth during the precursor-assisted CVD process, respectively. Carboxylic acid and sulfonic acid functionalization of the polystyrene ball facilitates homogeneous dispersion of the hydrophobic polymer template in the metal precursor solution, thus, resulting in a MGB with a uniform number of graphene layers. The MGB is shown to have a specific surface area of 508 m(2)/g and is mesoporous with a mean mesopore diameter of 4.27 nm. Mesopores are generated by the removal of agglomerated iron domains, permeating down through the soft polystyrene spheres and providing the surface for subsequent graphene growth during the heating process in a hydrogen environment. This technique requires only drop-casting of the precursor/polystyrene solution, allowing for mass-production of multilayer MGBs. The supercapacitor fabricated by the use of the MGB as an electrode demonstrates a specific capacitance of 206 F/g and more than 96% retention of capacitance after 10,000 cycles. The outstanding characteristics of the MGB as an electrode for supercapacitors verify the strong potential for use in energy-related areas. PMID:23782238

  4. Growth of graphene underlayers by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Fabiane, Mopeli; Khamlich, Saleh; Bello, Abdulhakeem; Dangbegnon, Julien; Momodu, Damilola; Charlie Johnson, A. T.; Manyala, Ncholu

    2013-11-01

    We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called "inverted wedding cake" stacking in multilayer graphene growth.

  5. Structure of chemical vapor deposition titania/silica gel

    SciTech Connect

    Leboda, R.; Gun'ko, V.M.; Marciniak, M.; Malygin, A.A.; Malkin, A.A.; Grzegorczyk, W.; Trznadel, B.J.; Pakhlov, E.M.; Voronin, E.F.

    1999-10-01

    The structure of porous silica gel/titania synthesized using chemical vapor deposition (CVD) of titania via repeated reactions of TiCl{sub 4} with the surface and subsequent hydrolysis of residual Ti-Cl bonds at different temperatures was investigated by means of low-temperature nitrogen adsorption-desorption, X-ray diffraction (XRD), IR spectroscopy, and theoretical methods. A globular model of porous solids with corpuscular structure was applied to estimate the porosity parameters of titania/silica gel adsorbents. The utilization of this model is useful, for example, to predict conditions for synthesis of titania/silica with a specified structure. Analysis of pore parameters and fractal dimension suggests that the porosity and fractality of samples decrease with increasing amount of TiO{sub 2} covering the silica gel surface in a nonuniform layer, which represents small particles embedded in pores and larger particles formed at the outer surface of silica globules. Theoretical simulation shows that the Si-O-Ti linkages between the cover and the substrate can be easily hydrolyzed, which is in agreement with the IR data corresponding to the absence of a band at 950 cm {sup {minus}1} (characteristic of Si-O-Ti bridges) independent of the concentration of CVD-titania.

  6. Thirty Gigahertz Optoelectronic Mixing in Chemical Vapor Deposited Graphene.

    PubMed

    Montanaro, Alberto; Mzali, Sana; Mazellier, Jean-Paul; Bezencenet, Odile; Larat, Christian; Molin, Stephanie; Morvan, Loïc; Legagneux, Pierre; Dolfi, Daniel; Dlubak, Bruno; Seneor, Pierre; Martin, Marie-Blandine; Hofmann, Stephan; Robertson, John; Centeno, Alba; Zurutuza, Amaia

    2016-05-11

    The remarkable properties of graphene, such as broadband optical absorption, high carrier mobility, and short photogenerated carrier lifetime, are particularly attractive for high-frequency optoelectronic devices operating at 1.55 μm telecom wavelength. Moreover, the possibility to transfer graphene on a silicon substrate using a complementary metal-oxide-semiconductor-compatible process opens the ability to integrate electronics and optics on a single cost-effective chip. Here, we report an optoelectronic mixer based on chemical vapor-deposited graphene transferred on an oxidized silicon substrate. Our device consists in a coplanar waveguide that integrates a graphene channel, passivated with an atomic layer-deposited Al2O3 film. With this new structure, 30 GHz optoelectronic mixing in commercially available graphene is demonstrated for the first time. In particular, using a 30 GHz intensity-modulated optical signal and a 29.9 GHz electrical signal, we show frequency downconversion to 100 MHz. These results open promising perspectives in the domain of optoelectronics for radar and radio-communication systems.

  7. Synthesis of Diamond by Plasma-Enhanced Chemical Vapor Deposition.

    NASA Astrophysics Data System (ADS)

    Chang, Jan-Jue

    Diamond possesses many desirable properties, e.g. high thermal conductivity, high electrical resistivity, high breakdown voltage, high resistance to chemical and radiation damage, high transparency over a wide range of optical spectrum, and extreme hardness. Thus diamond have high potential applicability in the fields of semiconductors, optical emitting materials, optical coating materials, abrasion, and high power and high frequency devices. To extend the range of applications, large-area uniformity and low temperature growth of diamond thin films has to be achieved. Low pressure deposition is one solution to the small area and nonuniformity problems of current diamond deposition methods. By decreasing the pressure, the mean free path of electrons becomes larger and the plasma covers a larger area. Low temperature deposition gives a smaller crystalline size of diamond, and hence improves the surface morphology of deposited films. To satisfy the supersaturation condition of diamond crystallization, low temperature growth should be performed at low pressure. This study experimentally investigates optimization of diamond growth at low pressure and low temperature by comparing three deposition systems (i.e. hot filament assisted, microwave induced plasma, and electron cyclotron resonance plasma chemical vapor deposition). The deposition system is designed to clearly show the effects of each experimental parameter on grown films. Thin diamond films were deposited on silicon substrates over a wide range of deposition parameters (e.g. CH _4 concentration 0-10%, substrate temperature 490-850^circC, total pressure 2-50 Torr, microwave power 0-1200 W). In addition, the effects of oxygen addition and substrate bias were studied. The diamond films were characterized by Raman spectroscopy and scanning electron microscopy, and the plasma was characterized by optical emission spectroscopy. Crystalline diamond was successfully deposited on silicon wafers at pressures as low as 2

  8. Single crystal diamond detectors grown by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Tuvè, C.; Angelone, M.; Bellini, V.; Balducci, A.; Donato, M. G.; Faggio, G.; Marinelli, M.; Messina, G.; Milani, E.; Morgada, M. E.; Pillon, M.; Potenza, R.; Pucella, G.; Russo, G.; Santangelo, S.; Scoccia, M.; Sutera, C.; Tucciarone, A.; Verona-Rinati, G.

    2007-01-01

    The detection properties of heteropitaxial (polycrystalline, pCVD) and homoepitaxial (single crystal, scCVD) diamond films grown by microwave chemical vapor deposition (CVD) in the Laboratories of Roma "Tor Vergata" University are reported. The pCVD diamond detectors were tested with α-particles from different sources and 12C ions produced by 15 MV Tandem accelerator at Southern National Laboratories (LNS) in Catania (Italy). pCVDs were also used to monitor 14 MeV neutrons produced by the D-T plasma at Joint European Torus (JET), Culham, U.K. The limit of pCVDs is the poor energy resolution. To overcome this problem, we developed scCVD diamonds using the same reactor parameters that optimized pCVD diamonds. scCVD were grown on a low cost (1 0 0) HPHT single crystal substrate. A detector 110 μm thick was tested under α-particles and under 14 MeV neutron irradiation. The charge collection efficiency spectrum measured under irradiation with a triple α-particle source shows three clearly resolved peaks, with an energy resolution of about 1.1%. The measured spectra under neutron irradiation show a well separated C(n,α0)9Be12 reaction peak with an energy spread of 0.5 MeV for 14.8 MeV neutrons and 0.3 MeV for 14.1 MeV neutrons, which are fully compatible with the energy spread of the incident neutron beams.

  9. Chemical reaction between water vapor and stressed glass

    NASA Technical Reports Server (NTRS)

    Soga, N.; Okamoto, T.; Hanada, T.; Kunugi, M.

    1979-01-01

    The crack velocity in soda-lime silicate glass was determined at room temperature at water-vapor pressures of 10 to 0.04 torr using the double torsion technique. A precracked glass specimen (70 x 16 x 1.6 mm) was placed in a vacuum chamber containing a four-point bending test apparatus. The plotted experimental results show that the crack propagation curve in water agrees fairly well with that of Wiederhorn (1967). Attention is given to the effect of water vapor pressure on crack velocity at K(I) = 550,000 N/m to the 3/2 power, with (Wiederhorn's data) or without N2 present. The plotted results reveal that the present crack velocity is about two orders of magnitude higher than that of Wiederhorn at high water-vapor conditions, but the difference decreases as the water-vapor concentration diminishes or the crack velocity slows down.

  10. Controlled vapor-liquid-solid growth of indium, gallium, and tinoxide nanowires via chemical vapor transport

    SciTech Connect

    Johnson, M.C.; Aloni, S.; McCready, D.E.; Bourret-Courchesne, E.D.

    2006-03-31

    We utilized a vapor-liquid-solid growth technique tosynthesize indium oxide, gallium oxide, and tin oxide nanowires usingchemical vapor transport with gold nanoparticles as the catalyst. Usingidentical growth parameters, we were able to synthesize single crystalnanowires typically 40-100 nm diameter and more than 10-100 m long. Theproducts were characterized by means of X-ray diffraction (XRD), scanningelectron microscopy (SEM), and high-resolution transmission electronmicroscopy (HRTEM). All the wires were grown under the same growthconditions with growth rates inversely proportional to the source metalvapor pressure. Initial experiments show that different transparent oxidenanowires can be grown simultaneously on a single substrate withpotential application for multicomponent gas sensors.

  11. Combustion chemical vapor deposition - A novel thin-film deposition technique

    NASA Astrophysics Data System (ADS)

    Hunt, A. T.; Carter, W. B.; Cochran, J. K., Jr.

    1993-07-01

    A new open-atmosphere chemical vapor deposition (CVD) technique has been developed that we term combustion chemical vapor deposition (CCVD). During CCVD a flame provides the necessary environment for the deposition of a dense film whose elemental constituents are derived from solution, vapor, or gas sources. Ag, YSZ, BaTiO3, YIG, YBa2Cu3O(x), and Y2BaCuO5 have been deposited via CCVD with the combustion of a sprayed, cation-containing, organic solution as the sole heat source. CCVD could, for some applications, be less expensive and more flexible than conventional CVD.

  12. Chemical vapor deposition of fluorine-doped zinc oxide

    DOEpatents

    Gordon, Roy G.; Kramer, Keith; Liang, Haifan

    2000-06-06

    Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.

  13. Potentiometric detection of chemical vapors using molecularly imprinted polymers as receptors

    NASA Astrophysics Data System (ADS)

    Liang, Rongning; Chen, Lusi; Qin, Wei

    2015-07-01

    Ion-selective electrode (ISE) based potentiometric gas sensors have shown to be promising analytical tools for detection of chemical vapors. However, such sensors are only capable of detecting those vapors which can be converted into ionic species in solution. This paper describes for the first time a polymer membrane ISE based potentiometric sensing system for sensitive and selective determination of neutral vapors in the gas phase. A molecularly imprinted polymer (MIP) is incorporated into the ISE membrane and used as the receptor for selective adsorption of the analyte vapor from the gas phase into the sensing membrane phase. An indicator ion with a structure similar to that of the vapor molecule is employed to indicate the change in the MIP binding sites in the membrane induced by the molecular recognition of the vapor. The toluene vapor is used as a model and benzoic acid is chosen as its indicator. Coupled to an apparatus manifold for preparation of vapor samples, the proposed ISE can be utilized to determine volatile toluene in the gas phase and allows potentiometric detection down to parts per million levels. This work demonstrates the possibility of developing a general sensing principle for detection of neutral vapors using ISEs.

  14. Potentiometric detection of chemical vapors using molecularly imprinted polymers as receptors

    PubMed Central

    Liang, Rongning; Chen, Lusi; Qin, Wei

    2015-01-01

    Ion-selective electrode (ISE) based potentiometric gas sensors have shown to be promising analytical tools for detection of chemical vapors. However, such sensors are only capable of detecting those vapors which can be converted into ionic species in solution. This paper describes for the first time a polymer membrane ISE based potentiometric sensing system for sensitive and selective determination of neutral vapors in the gas phase. A molecularly imprinted polymer (MIP) is incorporated into the ISE membrane and used as the receptor for selective adsorption of the analyte vapor from the gas phase into the sensing membrane phase. An indicator ion with a structure similar to that of the vapor molecule is employed to indicate the change in the MIP binding sites in the membrane induced by the molecular recognition of the vapor. The toluene vapor is used as a model and benzoic acid is chosen as its indicator. Coupled to an apparatus manifold for preparation of vapor samples, the proposed ISE can be utilized to determine volatile toluene in the gas phase and allows potentiometric detection down to parts per million levels. This work demonstrates the possibility of developing a general sensing principle for detection of neutral vapors using ISEs. PMID:26215887

  15. Magnetorheological finishing of chemical-vapor deposited zinc sulfide via chemically and mechanically modified fluids

    DOE PAGESBeta

    Salzman, Sivan; Romanofsky, Henry J.; Giannechini, Lucca J.; Jacobs, Stephen D.; Lambropoulos, John C.

    2016-02-19

    In this study, we describe the anisotropy in the material removal rate (MRR) of the polycrystalline, chemical-vapor deposited zinc sulfide (ZnS).We define the polycrystalline anisotropy via microhardness and chemical erosion tests for four crystallographic orientations of ZnS: (100), (110), (111), and (311). Anisotropy in the MRR was studied under magnetorheological finishing (MRF) conditions. Three chemically and mechanically modified magnetorheological (MR) fluids at pH values of 4, 5, and 6 were used to test the MRR variations among the four single-crystal planes. When polishing the single-crystal planes and the polycrystalline with pH 5 and pH 6MR fluids, variations were found inmore » the MRR among the four single-crystal planes and surface artifacts were observed on the polycrystalline material. When polishing the single-crystal planes and the polycrystalline with the modified MR fluid at pH 4, however, minimal variation was observed in the MRR among the four orientations and a reduction in surface artifacts was achieved on the polycrystalline material.« less

  16. Molecular restrictions for human eye irritation by chemical vapors

    SciTech Connect

    Cometto-Muniz, J. Enrique . E-mail: ecometto@ucsd.edu; Cain, William S.; Abraham, Michael H.

    2005-09-15

    Previous research showed a cut-off along homologous volatile organic compounds (VOCs) in their ability to produce acute human mucosal irritation. The present study sought to specify the particular cut-off homolog for sensory eye irritation in an acetate and n-alcohol series. A 1900-ml glass vessel system and a three-alternative forced-choice procedure served to test nonyl, decyl, and dodecyl acetate, and 1-nonanol, 1-decanol, and 1-undecanol. Flowrate to the eye ranged from 2 to 8 L/min and time of exposure from 3 to 24 s. Decyl acetate and 1-undecanol were the shortest homologs that failed to produce eye irritation under all conditions, producing a cut-off effect. Increasing the vapor concentration of decyl acetate and 1-undecanol by 3 and 8 times, respectively, via heating them to 37 deg C made either or both VOCs detectable to only half of the 12 subjects tested, even though the higher vapor concentration was well above a predicted eye irritation threshold. When eye irritation thresholds for homologous acetates and n-alcohols were plotted as a function of the longest unfolded length of the molecule, the values for decyl acetate and 1-undecanol fell within a restricted range of 18 to 19 A. The outcome suggests that the basis for the cut-off is biological, that is, the molecule lacks a key size or structure to trigger transduction, rather than physical, that is, the vapor concentration is too low to precipitate detection.

  17. Si Passivation and Chemical Vapor Deposition of Silicon Nitride: Final Technical Report, March 18, 2007

    SciTech Connect

    Atwater, H. A.

    2007-11-01

    This report investigated chemical and physical methods for Si surface passivation for application in crystalline Si and thin Si film photovoltaic devices. Overall, our efforts during the project were focused in three areas: i) synthesis of silicon nitride thin films with high hydrogen content by hot-wire chemical vapor deposition; ii) investigation of the role of hydrogen passivation of defects in crystalline Si and Si solar cells by out diffusion from hydrogenated silicon nitride films; iii) investigation of the growth kinetics and passivation of hydrogenated polycrystalline. Silicon nitride films were grown by hot-wire chemical vapor deposition and film properties have been characterized as a function of SiH4/NH3 flow ratio. It was demonstrated that hot-wire chemical vapor deposition leads to growth of SiNx films with controllable stoichiometry and hydrogen.

  18. Industrial Scale Synthesis of Carbon Nanotubes Via Fluidized Bed Chemical Vapor Deposition: A Senior Design Project

    ERIC Educational Resources Information Center

    Smith, York R.; Fuchs, Alan; Meyyappan, M.

    2010-01-01

    Senior year chemical engineering students designed a process to produce 10 000 tonnes per annum of single wall carbon nanotubes (SWNT) and also conducted bench-top experiments to synthesize SWNTs via fluidized bed chemical vapor deposition techniques. This was an excellent pedagogical experience because it related to the type of real world design…

  19. Controlled VLS Growth of Indium, Gallium and Tin Oxide Nanowiresvia Chemical Vapor Transport

    SciTech Connect

    Johnson, M.C.; Aloni, S.; McCready, D.E.; Bourret-Courchesne, E.D.

    2006-03-13

    We utilized a vapor-liquid-solid growth technique to synthesize indium oxide, gallium oxide, and tin oxide nanowires using chemical vapor transport with gold nanoparticles as the catalyst. Using identical growth parameters we were able to synthesize single crystal nanowires typically 40-100 nm diameter and more than 10-100 microns long. The products were characterized by means of XRD, SEM and HRTEM. All the wires were grown under the same growth conditions with growth rates inversely proportional to the source metal vapor pressure. Initial experiments show that different transparent oxide nanowires can be grown simultaneously on a single substrate with potential application for multi-component gas sensors.

  20. A model for chemical and isotopic fractionation in the lunar regolith by impact vaporization

    NASA Technical Reports Server (NTRS)

    Housley, R. M.

    1979-01-01

    Up until now there has been no complete model of chemical and isotopic fractionation effects which could occur in the lunar regolith as a result of hypervelocity impact vaporization. Previous work on the outlines for such a model are extended and show that impact vaporization could be an efficient mechanism for producing heavy isotope enrichments. Rough qualitative predictions based on the model show a general similarity to the observations on lunar samples.

  1. Metalorganic chemical vapor deposition of gallium nitride on sacrificial substrates

    NASA Astrophysics Data System (ADS)

    Fenwick, William Edward

    GaN-based light emitting diodes (LEDs) face several challenges if the technology is to continue to make a significant impact in general illumination, and on technology that has become known as solid state lighting (SSL). Two of the most pressing challenges for the continued penetration of SSL into traditional lighting applications are efficacy and total lumens from the device, and their related cost. The development of alternative substrate technologies is a promising avenue toward addressing both of these challenges, as both GaN-based device technology and the associated metalorganic chemical vapor deposition (MOCVD) technology are already relatively mature technologies with a well-understood cost base. Zinc oxide (ZnO) and silicon (Si) are among the most promising alternative substrates for GaN epitaxy. These substrates offer the ability to access both higher efficacy and lumen devices (ZnO) at a much reduced cost. This work focuses on the development of MOCVD growth processes to yield high quality GaN-based materials and devices on both ZnO and Si. ZnO is a promising substrate for growth of low defect-density GaN because of its similar lattice constant and thermal expansion coefficient. The major hurdles for GaN growth on ZnO are the instability of the substrate in a hydrogen atmosphere, which is typical of nitride growth conditions, and the inter-diffusion of zinc and oxygen from the substrate into the GaN-based epitaxial layer. A process was developed for the MOCVD growth of GaN and InxGa 1-xN on ZnO that attempted to address these issues. The structural and optical properties of these films were studied using various techniques. X-ray diffraction (XRD) showed the growth of wurtzite GaN on ZnO, and room-temperature photoluminescence (RT-PL) showed near band-edge luminescence from the GaN and InxGa1-xN layers. However, high zinc and oxygen concentrations due to interdiffusion near the ZnO substrate remained an issue; therefore, the diffusion of zinc and oxygen

  2. Removal of chemical oxygen demand and dissolved nutrients by a sunken lawn infiltration system during intermittent storm events.

    PubMed

    Hou, Lizhu; Yang, Huan; Li, Ming

    2014-01-01

    Urban surface water runoff typically contains high but varying amounts of organic matter and nutrients that require removal before reuse. Infiltration systems such as sunken lawns can improve water quality. However, there is currently insufficient information describing the treatment efficiency of lawn-based infiltration systems. In this study, novel sunken lawn infiltration systems (SLISs) were designed and their pollutant removal effectiveness was assessed. The results revealed that SLISs with Poa pratensis and Lolium perenne effectively removed most chemical oxygen demand (CODCr) and dissolved nutrients. Average CODCr, total nitrogen (TN), ammonium-nitrogen (NH4(+)-N) and total phosphorus (TP) concentrations were reduced by 78.93, 66.64, 71.86 and 75.83%, respectively, and the corresponding effluent concentrations met the standard for urban miscellaneous water consumption in China. The NH4(+)-N in the synthetic runoff was shown to be removed by adsorption during the stormwater dosing and nitrification during subsequent dry days, as well as through uptake by plants. Phosphorus was mainly removed by adsorption and chemical precipitation. The NH4(+)-N and phosphorus Langmuir isotherm model fitted the clay loam soil adsorption process better than the Freundlich model. Overall, these results indicate that an SLIS provides an alternative means of removing runoff pollutants owing to its efficiency, easy operation and maintenance. PMID:24473312

  3. Mathematical Analysis and Optimization of Infiltration Processes

    NASA Technical Reports Server (NTRS)

    Chang, H.-C.; Gottlieb, D.; Marion, M.; Sheldon, B. W.

    1997-01-01

    A variety of infiltration techniques can be used to fabricate solid materials, particularly composites. In general these processes can be described with at least one time dependent partial differential equation describing the evolution of the solid phase, coupled to one or more partial differential equations describing mass transport through a porous structure. This paper presents a detailed mathematical analysis of a relatively simple set of equations which is used to describe chemical vapor infiltration. The results demonstrate that the process is controlled by only two parameters, alpha and beta. The optimization problem associated with minimizing the infiltration time is also considered. Allowing alpha and beta to vary with time leads to significant reductions in the infiltration time, compared with the conventional case where alpha and beta are treated as constants.

  4. Application of laser Doppler velocimeter to chemical vapor laser system

    NASA Technical Reports Server (NTRS)

    Gartrell, Luther R.; Hunter, William W., Jr.; Lee, Ja H.; Fletcher, Mark T.; Tabibi, Bagher M.

    1993-01-01

    A laser Doppler velocimeter (LDV) system was used to measure iodide vapor flow fields inside two different-sized tubes. Typical velocity profiles across the laser tubes were obtained with an estimated +/-1 percent bias and +/-0.3 to 0.5 percent random uncertainty in the mean values and +/-2.5 percent random uncertainty in the turbulence-intensity values. Centerline velocities and turbulence intensities for various longitudinal locations ranged from 13 to 17.5 m/sec and 6 to 20 percent, respectively. In view of these findings, the effects of turbulence should be considered for flow field modeling. The LDV system provided calibration data for pressure and mass flow systems used routinely to monitor the research laser gas flow velocity.

  5. Method and apparatus for detection of chemical vapors

    DOEpatents

    Mahurin, Shannon Mark; Dai, Sheng; Caja, Josip

    2007-05-15

    The present invention is a gas detector and method for using the gas detector for detecting and identifying volatile organic and/or volatile inorganic substances present in unknown vapors in an environment. The gas detector comprises a sensing means and a detecting means for detecting electrical capacitance variance of the sensing means and for further identifying the volatile organic and volatile inorganic substances. The sensing means comprises at least one sensing unit and a sensing material allocated therein the sensing unit. The sensing material is an ionic liquid which is exposed to the environment and is capable of dissolving a quantity of said volatile substance upon exposure thereto. The sensing means constitutes an electrochemical capacitor and the detecting means is in electrical communication with the sensing means.

  6. A new whole-body vapor exposure chamber for protection performance research on chemical protective ensembles.

    PubMed

    Duncan, E J Scott; Dickson, Eva F Gudgin

    2003-01-01

    A chemical vapor exposure chamber was designed to permit the study of whole-body vapor exposure of individuals wearing full protective clothing and equipment systems. A methodology also was developed to quantify the vapor protection performance of chemical protective ensembles (CPE) under safe and validated laboratory procedures. The principal research objectives were to (1) provide a methodology to accurately assess the performance of CPE and equipment under different environmental and chemical vapor challenge conditions; (2) quantify the vapor protection on a per body region basis; (3) have a systems level tool to aid in the research and development of more effective CPE for use in chemical biological environments; and (4) have a safe and reliable means of qualifying new CPE on the basis of vapor protection. Although designed for the evaluation of military-style protective equipment, the procedures apply equally to other styles of CPE used by civilian agencies such as firefighters, police, and hazmat units. The chamber and methodology were specifically designed to examine the vapor protection performance of clothing ensembles, including the details of protection variation over the body. A variety of exposure conditions appropriate to indoor and outdoor scenarios are possible, including the effects of wind, temperature, and relative humidity. Protection performance results from a number of individuals wearing typical military-style CPE are presented. These results demonstrate that there is no such thing as a unique protection performance level obtained for a given CPE. Rather, the individual and the ensemble interact differently in each situation, resulting in a protection performance distribution for individuals, and for groups of wearers, even under a standardized set of exposure conditions. PMID:12688845

  7. Solar-induced chemical vapor deposition of diamond-type carbon films

    DOEpatents

    Pitts, J. Roland; Tracy, C. Edwin; King, David E.; Stanley, James T.

    1994-01-01

    An improved chemical vapor deposition method for depositing transparent continuous coatings of sp.sup.3 -bonded diamond-type carbon films, comprising: a) providing a volatile hydrocarbon gas/H.sub.2 reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and b) directing a concentrated solar flux of from about 40 to about 60 watts/cm.sup.2 through said reactant mixture to produce substrate temperatures of about 750.degree. C. to about 950.degree. C. to activate deposition of the film on said substrate.

  8. Solar-induced chemical vapor deposition of diamond-type carbon films

    DOEpatents

    Pitts, J.R.; Tracy, C.E.; King, D.E.; Stanley, J.T.

    1994-09-13

    An improved chemical vapor deposition method for depositing transparent continuous coatings of sp[sup 3]-bonded diamond-type carbon films, comprises: (a) providing a volatile hydrocarbon gas/H[sub 2] reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and (b) directing a concentrated solar flux of from about 40 to about 60 watts/cm[sup 2] through said reactant mixture to produce substrate temperatures of about 750 C to about 950 C to activate deposition of the film on said substrate. 11 figs.

  9. Selected area chemical vapor deposition of thin films for conductometric microelectronic chemical sensors

    NASA Astrophysics Data System (ADS)

    Majoo, Sanjeev

    Recent advances in microelectronics and silicon processing have been exploited to fabricate miniaturized chemical sensors. Although the capability of chemical sensing technology has grown steadily, it has been outpaced by the increasing demands for more reliable, inexpensive, and selective sensors. The diversity of applications requires the deployment of different sensing materials that have rich interfacial chemistry. However, several promising sensor materials are often incompatible with silicon micromachining and their deposition requires complicated masking steps. The new approach described here is to first micromachine a generic, instrumented, conductometric, microelectronic sensor platform that is fully functional except for the front-end sensing element. This generic platform contains a thin dielectric membrane, an integrated boron-doped silicon heater, and conductance electrodes. The membrane has low thermal mass and excellent thermal isolation. A proprietary selected-area chemical vapor deposition (SACVD) process in a cold-wall reactor at low pressures was then used to achieve maskless, self-lithographic deposition of thin films. The temperature-programmable integrated microheater initiates localized thermal decomposition/reaction of suitable CVD precursors confined to a small heated area (500 mum in diameter), and this creates the active sensing element. Platinum and titania (TiOsb2) films were deposited from pyrolysis of organometallic precursors, tetrakistrifluorophosphine platinum Pt(PFsb3)sb4 and titanium tetraisopropoxide Ti(OCH(CHsb3)sb2rbrack sb4, respectively. Deposition of gold metal films from chlorotriethylphosphine gold (Csb2Hsb5)sb3PAuCl precursor was also attempted but without success. The conductance electrodes permit in situ monitoring of film growth. The as-deposited films were characterized in situ by conductance measurements and optical microscopy and ex situ by electron microscopy and spectroscopy methods. Devices equipped with

  10. Reduced chemical warfare agent sorption in polyurethane-painted surfaces via plasma-enhanced chemical vapor deposition of perfluoroalkanes.

    PubMed

    Gordon, Wesley O; Peterson, Gregory W; Durke, Erin M

    2015-04-01

    Perfluoralkalation via plasma chemical vapor deposition has been used to improve hydrophobicity of surfaces. We have investigated this technique to improve the resistance of commercial polyurethane coatings to chemicals, such as chemical warfare agents. The reported results indicate the surface treatment minimizes the spread of agent droplets and the sorption of agent into the coating. The improvement in resistance is likely due to reduction of the coating's surface free energy via fluorine incorporation, but may also have contributing effects from surface morphology changes. The data indicates that plasma-based surface modifications may have utility in improving chemical resistance of commercial coatings.

  11. Chemical-vapor deposition of complex oxides: materials and process development

    SciTech Connect

    Muenchausen, R.

    1996-11-01

    This is the final report of a six-month, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL) part of the Advanced Materials Laboratory (AML). The demand for higher performance and lower cost in electronics is driving the need for advanced materials and consequent process integration. Ceramic thin-film technology is becoming more important in the manufacture of microelectronic devices, photovoltaics, optoelectronics, magneto-optics, sensors, microwave, and radio frequency communication devices, and high-Tc superconducting tapes. A flexible processing approach for potential large-scale manufacturing of novel electronic ceramic thin films is desirable. Current thin- film deposition technologies based on physical vapor-deposition techniques are limited in scale potential and have limited control of processing parameters. The lack of control over multiple process parameters inhibits the versatility and reproducibility of the physical vapor deposition processes applied to complex oxides. Chemical vapor deposition is emerging as a viable approach for large- scale manufacturing of electronic materials. Specifically, the ability to control more processing parameters with chemical vapor deposition than with other processing techniques provides the reliability and material property reproducibility required by manufacturing. This project sought to investigate the chemical vapor deposition of complex oxides.

  12. Evaluation of Chemical Warfare Agent Percutaneous Vapor Toxicity: Derivation of Toxicity Guidelines for Assessing Chemical Protective Ensembles.

    SciTech Connect

    Watson, A.P.

    2003-07-24

    Percutaneous vapor toxicity guidelines are provided for assessment and selection of chemical protective ensembles (CPEs) to be used by civilian and military first responders operating in a chemical warfare agent vapor environment. The agents evaluated include the G-series and VX nerve agents, the vesicant sulfur mustard (agent HD) and, to a lesser extent, the vesicant Lewisite (agent L). The focus of this evaluation is percutaneous vapor permeation of CPEs and the resulting skin absorption, as inhalation and ocular exposures are assumed to be largely eliminated through use of SCBA and full-face protective masks. Selection of appropriately protective CPE designs and materials incorporates a variety of test parameters to ensure operability, practicality, and adequacy. One aspect of adequacy assessment should be based on systems tests, which focus on effective protection of the most vulnerable body regions (e.g., the groin area), as identified in this analysis. The toxicity range of agent-specific cumulative exposures (Cts) derived in this analysis can be used as decision guidelines for CPE acceptance, in conjunction with weighting consideration towards more susceptible body regions. This toxicity range is bounded by the percutaneous vapor estimated minimal effect (EME{sub pv}) Ct (as the lower end) and the 1% population threshold effect (ECt{sub 01}) estimate. Assumptions of exposure duration used in CPE certification should consider that each agent-specific percutaneous vapor cumulative exposure Ct for a given endpoint is a constant for exposure durations between 30 min and 2 hours.

  13. Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Hazbun, Ramsey; Hart, John; Hickey, Ryan; Ghosh, Ayana; Fernando, Nalin; Zollner, Stefan; Adam, Thomas N.; Kolodzey, James

    2016-06-01

    The deposition of silicon using tetrasilane as a vapor precursor is described for an ultra-high vacuum chemical vapor deposition tool. The growth rates and morphology of the Si epitaxial layers over a range of temperatures and pressures are presented. The layers were characterized using transmission electron microscopy, x-ray diffraction, spectroscopic ellipsometry, Atomic Force Microscopy, and secondary ion mass spectrometry. Based on this characterization, high quality single crystal silicon epitaxy was observed. Tetrasilane was found to produce higher growth rates relative to lower order silanes, with the ability to deposit crystalline Si at low temperatures (T=400 °C), with significant amorphous growth and reactivity measured as low as 325 °C, indicating the suitability of tetrasilane for low temperature chemical vapor deposition such as for SiGeSn alloys.

  14. Development of a Computational Chemical Vapor Deposition Model: Applications to Indium Nitride and Dicyanovinylaniline

    NASA Technical Reports Server (NTRS)

    Cardelino, Carlos

    1999-01-01

    A computational chemical vapor deposition (CVD) model is presented, that couples chemical reaction mechanisms with fluid dynamic simulations for vapor deposition experiments. The chemical properties of the systems under investigation are evaluated using quantum, molecular and statistical mechanics models. The fluid dynamic computations are performed using the CFD-ACE program, which can simulate multispecies transport, heat and mass transfer, gas phase chemistry, chemistry of adsorbed species, pulsed reactant flow and variable gravity conditions. Two experimental setups are being studied, in order to fabricate films of: (a) indium nitride (InN) from the gas or surface phase reaction of trimethylindium and ammonia; and (b) 4-(1,1)dicyanovinyl-dimethylaminoaniline (DCVA) by vapor deposition. Modeling of these setups requires knowledge of three groups of properties: thermodynamic properties (heat capacity), transport properties (diffusion, viscosity, and thermal conductivity), and kinetic properties (rate constants for all possible elementary chemical reactions). These properties are evaluated using computational methods whenever experimental data is not available for the species or for the elementary reactions. The chemical vapor deposition model is applied to InN and DCVA. Several possible InN mechanisms are proposed and analyzed. The CVD model simulations of InN show that the deposition rate of InN is more efficient when pulsing chemistry is used under conditions of high pressure and microgravity. An analysis of the chemical properties of DCVA show that DCVA dimers may form under certain conditions of physical vapor transport. CVD simulations of the DCVA system suggest that deposition of the DCVA dimer may play a small role in the film and crystal growth processes.

  15. All-Hot-Wire Chemical Vapor Deposition a-Si:H Solar Cells

    SciTech Connect

    Iwaniczko, E.; Wang, Q.; Xu, Y.; Nelson, B. P.; Mahan, A. H.; Crandall, R. S.; Branz, H. M.

    2000-01-01

    Efficient hydrogenated amorphous silicon (a-Si:H) nip solar cells have been fabricated with all doped and undoped a-Si:H layers deposited by hot-wire chemical vapor deposition (HWCVD). The total deposition time of all layers, except the top ITO-contact, is less than 4 minutes.

  16. VAPOR SAMPLING DEVICE FOR INTERFACE WITH MICROTOX ASSAY FOR SCREENING TOXIC INDUSTRIAL CHEMICALS

    EPA Science Inventory

    A time-integrated sampling system interfaced with a toxicity-based assay is reported for monitoring volatile toxic industrial chemicals (TICs). Semipermeable membrane devices (SPMDs) using dimethyl sulfoxide (DMSO) as the fill solvent accumulated each of 17 TICs from the vapor...

  17. Low temperature junction growth using hot-wire chemical vapor deposition

    DOEpatents

    Wang, Qi; Page, Matthew; Iwaniczko, Eugene; Wang, Tihu; Yan, Yanfa

    2014-02-04

    A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

  18. High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells.

    PubMed

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    Thin films of hydrogenated amorphous silicon can be produced at MPa pressures from silane without the use of plasma at temperatures as low as 345 °C. High pressure chemical vapor deposition may open a new way to low cost deposition of amorphous silicon solar cells and other thin film structures over very large areas in very compact, simple reactors. PMID:27174318

  19. Chemical vapor deposition of W-Si-N and W-B-N

    DOEpatents

    Fleming, J.G.; Roherty-Osmun, E.L.; Smith, P.M.; Custer, J.S.; Jones, R.V.; Nicolet, M.; Madar, R.; Bernard, C.

    1999-06-29

    A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF[sub 6], either silicon or boron, and nitrogen. The result is a W-Si-N or W-B-N thin film useful for diffusion barrier and micromachining applications. 10 figs.

  20. Dopant gas effect on silicon chemical vapor depositions: A surface potential model

    NASA Technical Reports Server (NTRS)

    Chang, C. A.

    1975-01-01

    A surface potential model is proposed to consistently explain the known dopant gas effects on silicon chemical vapor deposition. This model predicts that the effects of the same dopant gases on the diamond deposition rate using methane and carbon tetrachloride should be opposite and similar to those of silane, respectively. Available data are in agreement with this prediction.

  1. High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells.

    PubMed

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    Thin films of hydrogenated amorphous silicon can be produced at MPa pressures from silane without the use of plasma at temperatures as low as 345 °C. High pressure chemical vapor deposition may open a new way to low cost deposition of amorphous silicon solar cells and other thin film structures over very large areas in very compact, simple reactors.

  2. Chemical vapor deposition of W-Si-N and W-B-N

    DOEpatents

    Fleming, James G.; Roherty-Osmun, Elizabeth Lynn; Smith, Paul M.; Custer, Jonathan S.; Jones, Ronald V.; Nicolet, Marc-A.; Madar, Roland; Bernard, Claude

    1999-01-01

    A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF.sub.6, either silicon or boron, and nitrogen. The result is a W--Si--N or W--B--N thin film useful for diffusion barrier and micromachining applications.

  3. A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilaments

    NASA Technical Reports Server (NTRS)

    Gokoglu, S. A.; Kuczmarski, M. A.

    1993-01-01

    Chemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis.

  4. Chemical vapor deposition and characterization of titanium dioxide thin films

    NASA Astrophysics Data System (ADS)

    Gilmer, David Christopher

    1998-12-01

    The continued drive to decrease the size and increase the speed of micro-electronic Metal-Oxide-Semiconductor (MOS) devices is hampered by some of the properties of the SiOsb2 gate dielectric. This research has focused on the CVD of TiOsb2 thin films to replace SiOsb2 as the gate dielectric in MOS capacitors and transistors. The relationship of CVD parameters and post-deposition anneal treatments to the physical and electrical properties of thin films of TiOsb2 has been studied. Structural and electrical characterization of TiOsb2 films grown from the CVD precursors tetraisopropoxotitanium (IV) (TTIP) and TTIP plus Hsb2O is described in Chapter 3. Both types of deposition produced stoichiometric TiOsb2 films comprised of polycrystalline anatase, but the interface properties were dramatically degraded when water vapor was added. Films grown with TTIP in the presence of Hsb2O contained greater than 50% more hydrogen than films grown using only TTIP and the hydrogen content of films deposited in both wet and dry TTIP environments decreased sharply with a post deposition Osb2 anneal. A significant thickness variation of the dielectric constant was observed which could be explained by an interfacial oxide and the finite accumulation thickness. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 38, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 4 discusses the low temperature CVD of crystalline TiOsb2 thin films deposited using the precursor tetranitratotitanium (IV), TNT, which produces crystalline TiOsb2 films of the anatase phase in UHV-CVD at temperatures as low as 184sp°C. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 17, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 5 describes the results of a comparison of physical and electrical properties between TiOsb2 films grown via LPCVD using

  5. Effect of irrigation with treated wastewater on soil chemical properties and infiltration rate.

    PubMed

    Bedbabis, Saida; Ben Rouina, Béchir; Boukhris, Makki; Ferrara, Giuseppe

    2014-01-15

    In Tunisia, water scarcity is one of the major constraints for agricultural activities. The reuse of treated wastewater (TWW) in agriculture can be a sustainable solution to face water scarcity. The research was conducted for a period of four years in an olive orchard planted on a sandy soil and subjected to irrigation treatments: a) rain-fed conditions (RF), as control b) well water (WW) and c) treated wastewater (TWW). In WW and TWW treatments, an annual amount of 5000 m(3) ha(-1) of water was supplied to the orchard. Soil samples were collected at the beginning of the study and after four years for each treatment. The main soil properties such as electrical conductivity (EC), pH, soluble cations, chloride (Cl(-)), sodium adsorption ratio (SAR), organic matter (OM) as well as the infiltration rate were investigated. After four years, either a significant decrease of pH and infiltration rate or a significant increase of OM, SAR and EC were observed in the soil subjected to treated wastewater treatment. PMID:24361727

  6. [The discussion of the infiltrative model of chemical knowledge stepping into genetics teaching in agricultural institute or university].

    PubMed

    Zou, Ping; Luo, Pei-Gao

    2010-05-01

    Chemistry is an important group of basic courses, while genetics is one of the important major-basic courses in curriculum of many majors in agricultural institutes or universities. In order to establish the linkage between the major course and the basic course, the ability of application of the chemical knowledge previously learned in understanding genetic knowledge in genetics teaching is worthy of discussion for genetics teachers. In this paper, the authors advocate to apply some chemical knowledge previously learned to understand genetic knowledge in genetics teaching with infiltrative model, which could help students learn and understand genetic knowledge more deeply. Analysis of the intrinsic logistic relationship among the knowledge of different courses and construction of the integral knowledge network are useful for students to improve their analytic, comprehensive and logistic abilities. By this way, we could explore a new teaching model to develop the talents with new ideas and comprehensive competence in agricultural fields.

  7. Oxidation of Chemically-Vapor-Deposited Silicon Carbide in Carbon Dioxide

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.; Nguyen, QuynhGiao N.

    1998-01-01

    Chemically-vapor-deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO2) at temperatures of 1200-1400 C for times between 96 and 500 h at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate limiting kinetic mechanisms are discussed. Passive oxidation of SiC by CO2 is negligible compared to the rates measured for other oxidants that are also found in combustion environments, oxygen and water vapor.

  8. Alcohol vapor sensing by cadmium-doped zinc oxide thick films based chemical sensor

    NASA Astrophysics Data System (ADS)

    Zargar, R. A.; Arora, M.; Chackrabarti, S.; Ahmad, S.; Kumar, J.; Hafiz, A. K.

    2016-04-01

    Cadmium-doped zinc oxide nanoparticles were derived by simple chemical co-precipitation route using zinc acetate dihydrate and cadmium acetate dihydrate as precursor materials. The thick films were casted from chemical co-precipitation route prepared nanoparticles by economic facile screen printing method. The structural, morphological, optical and electrical properties of the film were characterized relevant to alcohol vapor sensing application by powder XRD, SEM, UV-VIS and DC conductivity techniques. The response and sensitivity of alcohol (ethanol) vapor sensor are obtained from the recovery curves at optimum working temperature range from 20∘C to 50∘C. The result shows that maximum sensitivity of the sensor is observed at 25∘C operating temperature. On varying alcohol vapor concentration, minor variation in resistance has been observed. The sensing mechanism of sensor has been described in terms of physical adsorption and chemical absorption of alcohol vapors on cadmium-doped zinc oxide film surface and inside film lattice network through weak hydrogen bonding, respectively.

  9. Chemical vapor deposition of atomically thin materials for membrane dialysis applications

    NASA Astrophysics Data System (ADS)

    Kidambi, Piran; Mok, Alexander; Jang, Doojoon; Boutilier, Michael; Wang, Luda; Karnik, Rohit; Microfluidics; Nanofluidics Research Lab Team

    2015-11-01

    Atomically thin 2D materials like graphene and h-BN represent a new class of membranes materials. They offer the possibility of minimum theoretical membrane transport resistance along with the opportunity to tune pore sizes at the nanometer scale. Chemical vapor deposition has emerged as the preferable route towards scalable, cost effective synthesis of 2D materials. Here we show selective molecular transport through sub-nanometer diameter pores in graphene grown via chemical vapor deposition processes. A combination of pressure driven and diffusive transport measurements shows evidence for size selective transport behavior which can be used for separation by dialysis for applications such as desalting of biomolecular or chemical solutions. Principal Investigator

  10. The design, construction and three dimensional modeling of a high pressure organometallic chemical vapor deposition reactor

    NASA Astrophysics Data System (ADS)

    McCall, Sonya Denise

    Two high pressure reactors have been designed, built and tested, in order to extend Organometallic Chemical Vapor Deposition (OMCVD) to materials that exhibit large thermal decomposition pressures at their optimum growth temperature. The Differentially Pressure Controlled (DPC) Reactor System was designed and built for use at pressures ≤10 atm. A second generation reactor, the Compact Hard Shell (CHS) Reactor was built in order to extend pressures ≤100 atm. A physico-chemical model of the High Pressure Organometallic Chemical Vapor Deposition (HPOMCVD) process that describes three dimensional transport phenomena as well as gas-phase and surface reactions underlying the growth of compound semiconductors is presented. A reduced-order model of the Organometallic Chemical Vapor Deposition of InN from trimethylindium and ammonia at elevated pressures has been developed and tested. The model describes the flow dynamics coupled to chemical reactions and transport in the flow channel of the Compact Hard Shell Reactor, as a function of substrate temperature, total pressure and centerline flow velocity.

  11. Oxidation Kinetics of Chemically Vapor-Deposited Silicon Carbide in Wet Oxygen

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.

    1994-01-01

    The oxidation kinetics of chemically vapor-deposited SiC in dry oxygen and wet oxygen (P(sub H2O) = 0.1 atm) at temperatures between 1200 C and 1400 C were monitored using thermogravimetric analysis. It was found that in a clean environment, 10% water vapor enhanced the oxidation kinetics of SiC only very slightly compared to rates found in dry oxygen. Oxidation kinetics were examined in terms of the Deal and Grove model for oxidation of silicon. It was found that in an environment containing even small amounts of impurities, such as high-purity Al2O3 reaction tubes containing 200 ppm Na, water vapor enhanced the transport of these impurities to the oxidation sample. Oxidation rates increased under these conditions presumably because of the formation of less protective sodium alumino-silicate scales.

  12. Effects of growth pressure on morphology of ZnO nanostructures by chemical vapor transport

    NASA Astrophysics Data System (ADS)

    Babu, Eadi Sunil; Kim, Sungjin; Song, Jung-Hoon; Hong, Soon-Ku

    2016-08-01

    The effect of growth pressure on the morphology of the ZnO nanostructures in chemical vapor transport by using Zn powder and oxygen as source materials has been investigated. Highly uniform aligned ZnO nanorods or multifaceted tripod structures were grown depending on the growth pressure. The mechanism governing the morphology change was explained by the relative concentration of Zn vapor and supersaturation based on experimental observations. It was concluded that heterogeneous nucleation on the substrate is enhanced at low growth pressure, while homogeneous nucleation from vapor phase is enhanced at high growth pressure. The difference resulted in different morphology of ZnO nanostructures. ZnO nanorods grown at optimized condition were used for the fabrication of gas sensor for the detection of H2 gas.

  13. Diagnostic for Plasma Enhanced Chemical Vapor Deposition and Etch Systems

    NASA Technical Reports Server (NTRS)

    Cappelli, Mark A.

    1999-01-01

    In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies ion the processing of semiconductor materials arising from understanding etch chemistries are being developed through a research collaboration between Stanford University and NASA-Ames Research Center, Although a great deal of laboratory-scale research has been performed on many of materials processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. In addition, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. The research described involves the study of plasmas used in semiconductor processes. An inductively coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics and chemistries. This ICP source generates plasmas with higher electron densities (approximately 10(exp 12)/cu cm) and lower operating pressures (approximately 7 mTorr) than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The motivation for this study is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas-phase and surface reaction rates. species

  14. Combinatorial Characterization of TiO2 Chemical Vapor Deposition Utilizing Titanium Isopropoxide.

    PubMed

    Reinke, Michael; Ponomarev, Evgeniy; Kuzminykh, Yury; Hoffmann, Patrik

    2015-07-13

    The combinatorial characterization of the growth kinetics in chemical vapor deposition processes is challenging because precise information about the local precursor flow is usually difficult to access. In consequence, combinatorial chemical vapor deposition techniques are utilized more to study functional properties of thin films as a function of chemical composition, growth rate or crystallinity than to study the growth process itself. We present an experimental procedure which allows the combinatorial study of precursor surface kinetics during the film growth using high vacuum chemical vapor deposition. As consequence of the high vacuum environment, the precursor transport takes place in the molecular flow regime, which allows predicting and modifying precursor impinging rates on the substrate with comparatively little experimental effort. In this contribution, we study the surface kinetics of titanium dioxide formation using titanium tetraisopropoxide as precursor molecule over a large parameter range. We discuss precursor flux and temperature dependent morphology, crystallinity, growth rates, and precursor deposition efficiency. We conclude that the surface reaction of the adsorbed precursor molecules comprises a higher order reaction component with respect to precursor surface coverage.

  15. Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications

    SciTech Connect

    Rainer Wallny

    2012-10-15

    Diamond was studied as a possible radiation hard technology for use in future high radiation environments. With the commissioning of the LHC expected in 2010, and the LHC upgrades expected in 2015, all LHC experiments are planning for detector upgrades which require radiation hard technologies. Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle and CDF and is installed and operational in all LHC experiments. As a result, this material is now being discussed as an alternative sensor material for tracking very close to the interaction region of the super-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications.

  16. Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications

    SciTech Connect

    Harris Kagan; K.K. Gan; Richard Kass

    2009-03-31

    Diamond was studied as a possible radiation hard technology for use in future high radiation environments. With the commissioning of the LHC expected in 2009, and the LHC upgrades expected in 2013, all LHC experiments are planning for detector upgrades which require radiation hard technologies. Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of BaBar, Belle and CDF and is installed in all LHC experiments. As a result, this material is now being discussed as an alternative sensor material for tracking very close to the interaction region of the super-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications.

  17. Process for the preparation of fiber-reinforced ceramic composites by chemical vapor deposition

    DOEpatents

    Lackey, Jr., Walter J.; Caputo, Anthony J.

    1986-01-01

    A chemical vapor deposition (CVD) process for preparing fiber-reinforced ceramic composites. A specially designed apparatus provides a steep thermal gradient across the thickness of a fibrous preform. A flow of gaseous ceramic matrix material is directed into the fibrous preform at the cold surface. The deposition of the matrix occurs progressively from the hot surface of the fibrous preform toward the cold surface. Such deposition prevents the surface of the fibrous preform from becoming plugged. As a result thereof, the flow of reactant matrix gases into the uninfiltrated (undeposited) portion of the fibrous preform occurs throughout the deposition process. The progressive and continuous deposition of ceramic matrix within the fibrous preform provides for a significant reduction in process time over known chemical vapor deposition processes.

  18. Chemically enhanced mixed region vapor stripping of TCE-contaminated saturated peat and silty clay soils

    SciTech Connect

    West, O.R.; Cameron, P.A.; Lucero, A.J.; Koran, L.J. Jr.

    1996-01-01

    The objective of this study was to conduct further testing of MRVS, chemically enhanced with calcium oxide conditioning, on field- contaminated soils collected from beneath the NASA Michoud Rinsewater Impoundment. In this study, residual soil VOC levels as a function of vapor stripping time were measured to quantify VOC removal rates. Physical and chemical soil parameters expected to affect MRVS efficiency were measures. The effects of varying the calcium oxide loadings as well as varying the vapor stripping flow rates on VOC removal were also evaluated. The results of this study will be used to determine whether acceptable removals can be achieved within reasonable treatment times, remediation costs being directly proportional to the latter. The purpose of this report is to document the experimental results of this study, as well as to address issues that were raised after completion of the previous Michoud treatability work.

  19. Proposed Occupational Exposure Limits for Non-Carcinogenic Hanford Waste Tank Vapor Chemicals

    SciTech Connect

    Poet, Torka S.; Timchalk, Chuck

    2006-03-24

    A large number of volatile chemicals have been identified in the headspaces of tanks used to store mixed chemical and radioactive waste at the U.S. Department of Energy (DOE) Hanford Site, and there is concern that vapor releases from the tanks may be hazardous to workers. Contractually established occupational exposure limits (OELs) established by the Occupational Safety and Health Administration (OSHA) and American Conference of Governmental Industrial Hygienists (ACGIH) do not exist for all chemicals of interest. To address the need for worker exposure guidelines for those chemicals that lack OSHA or ACGIH OELs, a procedure for assigning Acceptable Occupational Exposure Limits (AOELs) for Hanford Site tank farm workers has been developed and applied to a selected group of 57 headspace chemicals.

  20. Conductivity of Thin Films Based on Single-Walled Carbon Nanotubes Grown by Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Rybakov, M. S.; Kosobutsky, A. V.; Sevostyanov, O. G.; Russakov, D. M.; Lomakin, M. V.; Chirkova, I. M.; Shandakov, S. D.

    2015-03-01

    Electrical and optical properties of thin films of single-walled carbon nanotubes (SWCNT) obtained by aerosol chemical vapor deposition using ethanol, ferrocene, and sulfur are studied. Structural and geometrical characteristics of the synthesis products are determined by the methods of Raman spectroscopy and transmission electron microscopy. The effect of sulfur on the properties of the SWCNTs and thin films based on them is found.

  1. Magnetic nanostructures fabricated by scanning tunneling microscope-assisted chemical vapor deposition

    SciTech Connect

    Pai, W.W.; Zhang, J.; Wendelken, J.F.; Warmack, R.J.

    1997-07-01

    We have successfully used scanning tunneling microscope-assisted chemical vapor deposition to fabricate magnetic nanostructures as fine as 5 nm wide and {lt}2 nm high using ferrocene [Fe(C{sub 5}H{sub 5}){sub 2}] as the metal-organic source gas. The physical properties of these nanostructures were qualitatively characterized and {ital ex situ} magnetic force microscopy measurements indicate these features are strongly magnetic.

  2. Fabrication of lightweight ceramic mirrors by means of a chemical vapor deposition process

    NASA Technical Reports Server (NTRS)

    Goela, Jitendra S. (Inventor); Taylor, Raymond L. (Inventor)

    1991-01-01

    A process to fabricate lightweigth ceramic mirrors, and in particular, silicon/silicon carbide mirrors, involves three chemical vapor deposition steps: one to produce the mirror faceplate, the second to form the lightweight backstructure which is deposited integral to the faceplate, and the third and final step which results in the deposition of a layer of optical grade material, for example, silicon, onto the front surface of the faceplate. The mirror figure and finish are fabricated into this latter material.

  3. Synthesis of Cobalt Oxides Thin Films Fractal Structures by Laser Chemical Vapor Deposition

    PubMed Central

    Haniam, P.; Kunsombat, C.; Chiangga, S.; Songsasen, A.

    2014-01-01

    Thin films of cobalt oxides (CoO and Co3O4) fractal structures have been synthesized by using laser chemical vapor deposition at room temperature and atmospheric pressure. Various factors which affect the density and crystallization of cobalt oxides fractal shapes have been examined. We show that the fractal structures can be described by diffusion-limited aggregation model and discuss a new possibility to control the fractal structures. PMID:24672354

  4. Synthesis of cobalt oxides thin films fractal structures by laser chemical vapor deposition.

    PubMed

    Haniam, P; Kunsombat, C; Chiangga, S; Songsasen, A

    2014-01-01

    Thin films of cobalt oxides (CoO and Co3O4) fractal structures have been synthesized by using laser chemical vapor deposition at room temperature and atmospheric pressure. Various factors which affect the density and crystallization of cobalt oxides fractal shapes have been examined. We show that the fractal structures can be described by diffusion-limited aggregation model and discuss a new possibility to control the fractal structures. PMID:24672354

  5. Gravity Effects in Carbon Nanotube Growth by Thermal Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Zhu, S.; Su, C. H.; Cochrane, J. C.; Lehoczky, S. L.; Cui, Y.; Burger, A.; Whitaker, Ann F. (Technical Monitor)

    2001-01-01

    Carbon nanotubes are synthesized using thermal chemical vapor deposition. The sizes of these carbon nanotubes (CNT) are quite uniform and the length of the tube is up to several tens of micrometers. With the substrate surface normal either along or against the gravity vector, different growth orientations of CNT are observed by scanning electron microscopy although the Raman spectra are similar for samples synthesized at different locations. These results suggest the gravitation effects in the growth of long and small diameter CNT.

  6. Electrochromic properties of molybdenum trioxide thin films prepared by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Maruyama, Toshiro; Kanagawa, Tetsuya

    1995-05-01

    Electrochromic molybdenum trioxide thin films were prepared by chemical vapor deposition. The source material was molybdenum carbonyl. Amorphous molybdenum trioxide thin films were produced at a substrate temperature 300 C. Reduction and oxidation of the films in a 0.3M LiClO4 propylene carbon ate solution caused desirable changes in optical absorption. Coulometry indicated that the coloration efficiency was 25.8 sq cm center-dot C(exp -1).

  7. Metal organic chemical vapor deposition of 111-v compounds on silicon

    DOEpatents

    Vernon, Stanley M.

    1986-01-01

    Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

  8. The development of chemically vapor deposited mullite coatings for the corrosion protection of SiC

    SciTech Connect

    Auger, M.; Hou, P.; Sengupta, A.; Basu, S.; Sarin, V.

    1998-05-01

    Crystalline mullite coatings have been chemically vapor deposited onto SiC substrates to enhance the corrosion and oxidation resistance of the substrate. Current research has been divided into three distinct areas: (1) Development of the deposition processing conditions for increased control over coating`s growth rate, microstructure, and morphology; (2) Analysis of the coating`s crystal structure and stability; (3) The corrosion resistance of the CVD mullite coating on SiC.

  9. GaN Stress Evolution During Metal-Organic Chemical Vapor Deposition

    SciTech Connect

    Amano, H.; Chason, E.; Figiel, J.; Floro, J.A.; Han, J.; Hearne, S.; Hunter, J.; Tsong, I.

    1998-10-14

    The evolution of stress in gallium nitride films on sapphire has been measured in real- time during metal organic chemical vapor deposition. In spite of the 161%0 compressive lattice mismatch of GaN to sapphire, we find that GaN consistently grows in tension at 1050"C. Furthermore, in-situ stress monitoring indicates that there is no measurable relaxation of the tensile growth stress during annealing or thermal cycling.

  10. Negative Electron Affinity Effect on the Surface of Chemical Vapor Deposited Diamond Polycrystalline Films

    NASA Technical Reports Server (NTRS)

    Krainsky, I. L.; Asnin, V. M.; Mearini, G. T.; Dayton, J. A., Jr.

    1996-01-01

    Strong negative electron affinity effects have been observed on the surface of as-grown chemical vapor deposited diamond using Secondary Electron Emission. The test samples were randomly oriented and the surface was terminated with hydrogen. The effect appears as an intensive peak in the low energy part of the spectrum of the electron energy distribution and may be described in the model of effective negative electron affinity.

  11. Hydrological, chemical, and isotopic budgets of Lake Chad: a quantitative assessment of evaporation, transpiration and infiltration fluxes

    NASA Astrophysics Data System (ADS)

    Bouchez, Camille; Goncalves, Julio; Deschamps, Pierre; Vallet-Coulomb, Christine; Hamelin, Bruno; Doumnang, Jean-Claude; Sylvestre, Florence

    2016-04-01

    In the Sahelian belt, Lake Chad is a key water body for 13 million people, who live on its resources. It experiences, however, substantial and frequent surface changes. Located at the centre of one of the largest endorheic basins in the world, its waters remain surprisingly fresh. Its low salinity has been attributed to a low infiltration flow whose value remains poorly constrained. Understanding the lake's hydrological behaviour in response to climate variability requires a better constraint of the factors that control its water and chemical balance. Based on the three-pool conceptualization of Lake Chad proposed by Bader et al. (2011), this study aims to quantify the total water outflow from the lake, the respective proportions of evaporation (E), transpiration (T), and infiltration (I), and the associated uncertainties. A Bayesian inversion method based on lake-level data was used, leading to total water loss estimates in each pool (E + T + I = ETI). Sodium and stable isotope mass balances were then used to separate total water losses into E, T, and I components. Despite the scarcity of representative data available on the lake, the combination of these two geochemical tracers is relevant to assess the relative contribution of these three outflows involved in the control of the hydrological budget. Mean evapotranspiration rates were estimated at 2070 ± 100 and 2270 ± 100 mm yr-1 for the southern and northern pools, respectively. Infiltration represents between 100 and 300 mm yr-1 but most of the water is evapotranspirated in the first few kilometres from the shorelines and does not efficiently recharge the Quaternary aquifer. Transpiration is shown to be significant, around 300 mm yr-1 and reaches 500 mm yr-1 in the vegetated zone of the archipelagos. Hydrological and chemical simulations reproduce the marked hydrological change between the normal lake state that occurred before 1972 and the small lake state after 1972 when the lake surface shrunk to a one

  12. Hydrological, chemical and isotopic budgets of Lake Chad: a quantitative assessment of evaporation, transpiration and infiltration fluxes

    NASA Astrophysics Data System (ADS)

    Bouchez, C.; Goncalves, J.; Deschamps, P.; Vallet-Coulomb, C.; Hamelin, B.; Doumnang, J.-C.; Sylvestre, F.

    2015-10-01

    In the Sahelian belt, Lake Chad is a key water body for 13 million people who live on its resources. It experiences, however, substantial and frequent surface changes. Located at the center of one of the largest endorheic basins in the world, its waters remain surprisingly fresh. Its low salinity has been attributed to a low infiltration flow whose value remains poorly constrained. Understanding the lake's hydrological behavior in response to climate variability requires a better constraint of the factors that control its water and chemical balance. Based on the three-pool conceptualization of Lake Chad proposed by J. C. Bader, J. Lemoalle, and M. Leblanc (Bader et al., 2011), this study aims to quantify the total water outflow from the lake, the respective proportions of evaporation (E), transpiration (T) and infiltration (I), and the associated uncertainties. A Bayesian inversion method based on lake-level data was used, leading to total water loss estimates in each pool (ETI). Sodium and stable isotope mass balances were then used to separate total water losses into E, T and I components. Despite the scarcity of representative data available on the lake, the combination of these two geochemical tracers is relevant to assess the relative contribution of these three outflows involved in the control of the hydrological budget. Mean evapotranspiration rates were estimated at 2070 ± 100 and 2270 ± 100 mm yr-1 for the southern and northern pools respectively. Infiltration represents between 100 and 300 mm yr-1 but most of the water is evapotranspirated in the first few kilometers from the shorelines and does not efficiently recharge the Quaternary aquifer. Transpiration is shown to be significant, around 300 mm yr-1 and reaches 500 mm yr-1 in the vegetated zone of the archipelagos. Hydrological and chemical simulations reproduce the marked hydrological change between the normal lake state that occurred before 1972 and the small lake state after 1972 when the lake

  13. Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

    PubMed

    Papadimitropoulos, G; Davazoglou, D

    2011-09-01

    In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage. PMID:22097561

  14. Chemical vapor deposition of high T(sub c) superconducting films in a microgravity environment

    NASA Technical Reports Server (NTRS)

    Levy, Moises; Sarma, Bimal K.

    1994-01-01

    Since the discovery of the YBaCuO bulk materials in 1987, Metalorganic Chemical Vapor Deposition (MOCVD) has been proposed for preparing HTSC high T(sub c) films. This technique is now capable of producing high-T(sub c) superconducting thin films comparable in quality to those prepared by any other methods. The MOCVD technique has demonstrated its superior advantage in making large area high quality HTSC thin films and will play a major role in the advance of device applications of HTSC thin films. The organometallic precursors used in the MOCVD preparation of HTSC oxide thin films are most frequently metal beta-diketonates. High T(sub c) superconductors are multi-component oxides which require more than one component source, with each source, containing one kind of precursor. Because the volatility and stability of the precursors are strongly dependent on temperature, system pressure, and carrier gas flow rate, it has been difficult to control the gas phase composition, and hence film stoichiometry. In order circumvent these problems we have built and tested a single source MOCVD reactor in which a specially designed vaporizer was employed. This vaporizer can be used to volatilize a stoichiometric mixture of diketonates of yttrium, barium and copper to produce a mixed vapor in a 1:2:3 ratio respectively of the organometellics. This is accomplished even though the three compounds have significantly different volatilities. We have developed a model which provides insight into the process of vaporizing mixed precursors to produce high quality thin films of Y1Ba2Cu3O7. It shows that under steady state conditions the mixed organometallic vapor must have a stoichiometric ratio of the individual organometallics identical to that in the solid mixture.

  15. Chemical effects in vaporizing synthetic fuels. Final report, June 23-November 30, 1981. [Tetradecane

    SciTech Connect

    Vranos, A.; Liscinsky, D.S.

    1982-01-01

    Chemical changes that occur during fuel vaporization were investigated experimentally in this program. Analytical techniques were developed to characterize fuels and reaction products. The major components of SRC-II middle distillate MD and fuel decomposition products were polycyclic aromatic hydrocarbons (PAH). Capillary gas chromatography was the preferred method of analysis for identifying and quantifying PAH. Decomposition of SRC-II MD under surface vaporizing conditions was studied as a function of temperature (heating rate), vapor phase residence time, and oxygen level. Decomposition was found to be greatest at low temperature. Boiling mode did not appear to affect the extent of decomposition. Decomposition was weakly related to chemical class and strongly related to component volatility. The effect of gas phase residence time and oxygen level were negligible at the conditions studied. A droplet vaporization apparatus was used to study the decomposition of SRC-II MD, No. 2 fuel oil, and n-tetradecane as a function of temperature, vapor-phase residence time, droplet spacing, and oxygen level. Emphasis was placed on formation of PAH, soot, and light pyrolysis products. The light gases accounted for nearly all of the fuel carbon prior to the onset of sooting. PAH concentrations maximized at the onset of sooting. The major PAH species found in the condensed decomposition products were phenanthrene, fluoranthene, pyrene, and cyclopenta(cd)pyrene. PAH levels were a function of temperature and residence time. PAH products distributions were a function of droplet spacing due to reduced heat transfer. The concentrations of all hydrocarbon decomposition products were decreased by the addition of oxygen. 9 references, 24 figures, 13 tables.

  16. Synthesis of single-crystalline anisotropic gold nano-crystals via chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Manna, Sohini; Kim, Jong Woo; Takahashi, Yukiko; Shpyrko, Oleg G.; Fullerton, Eric E.

    2016-05-01

    We report on a novel one-step catalyst-free, thermal chemical vapor deposition procedure to synthesize gold nanocrystals on silicon substrates. This approach yields single-crystal nanocrystals with various morphologies, such as prisms, icosahedrons, and five-fold twinned decahedrons. Our approach demonstrates that high-quality anisotropic crystals composed of fcc metals can be produced without the need for surfactants or templates. Compared with the traditional wet chemical synthesis processes, our method enables direct formation of highly pure and single crystalline nanocrystals on solid substrates which have applications in catalysis. We investigated the evolution of gold nanocrystals and established their formation mechanism.

  17. High rate chemical vapor deposition of carbon films using fluorinated gases

    DOEpatents

    Stafford, Byron L.; Tracy, C. Edwin; Benson, David K.; Nelson, Arthur J.

    1993-01-01

    A high rate, low-temperature deposition of amorphous carbon films is produced by PE-CVD in the presence of a fluorinated or other halide gas. The deposition can be performed at less than 100.degree. C., including ambient room temperature, with a radio frequency plasma assisted chemical vapor deposition process. With less than 6.5 atomic percent fluorine incorporated into the amorphous carbon film, the characteristics of the carbon film, including index of refraction, mass density, optical clarity, and chemical resistance are within fifteen percent (15%) of those characteristics for pure amorphous carbon films, but the deposition rates are high.

  18. Removal characteristics of plasma chemical vaporization machining with a pipe electrode for optical fabrication

    SciTech Connect

    Takino, Hideo; Yamamura, Kazuya; Sano, Yasuhisa; Mori, Yuzo

    2010-08-10

    Plasma chemical vaporization machining (CVM) is a high-precision chemical shaping method using rf plasma generated in the proximity of an electrode in an atmospheric environment. The purpose of the present study is to clarify the removal characteristics of plasma CVM using a pipe electrode. Polished fused silica plates were processed by plasma CVM, polishing, and precision grinding under various conditions. The removal rate of plasma CVM was about 4 to 1100 times faster than that of polishing, and the maximum removal rate was almost equal to that of precision grinding. The roughness of the resultant surfaces was almost the same as that of the polished surfaces.

  19. Monocrystalline molybdenum silicide based quantum dot superlattices grown by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Savelli, Guillaume; Silveira Stein, Sergio; Bernard-Granger, Guillaume; Faucherand, Pascal; Montès, Laurent

    2016-09-01

    This paper presents the growth of doped monocrystalline molybdenum-silicide-based quantum dot superlattices (QDSL). This is the first time that such nanostructured materials integrating molybdenum silicide nanodots have been grown. QDSL are grown by reduced pressure chemical vapor deposition (RPCVD). We present here their crystallographic structures and chemical properties, as well as the influence of the nanostructuration on their thermal and electrical properties. Particularly, it will be shown some specific characteristics for these QDSL, such as a localization of nanodots between the layers, unlike other silicide based QDSL, an accumulation of doping atoms near the nanodots, and a strong decrease of the thermal conductivity obtained thanks to the nanostructuration.

  20. Low power, lightweight vapor sensing using arrays of conducting polymer composite chemically-sensitive resistors

    NASA Technical Reports Server (NTRS)

    Ryan, M. A.; Lewis, N. S.

    2001-01-01

    Arrays of broadly responsive vapor detectors can be used to detect, identify, and quantify vapors and vapor mixtures. One implementation of this strategy involves the use of arrays of chemically-sensitive resistors made from conducting polymer composites. Sorption of an analyte into the polymer composite detector leads to swelling of the film material. The swelling is in turn transduced into a change in electrical resistance because the detector films consist of polymers filled with conducting particles such as carbon black. The differential sorption, and thus differential swelling, of an analyte into each polymer composite in the array produces a unique pattern for each different analyte of interest, Pattern recognition algorithms are then used to analyze the multivariate data arising from the responses of such a detector array. Chiral detector films can provide differential detection of the presence of certain chiral organic vapor analytes. Aspects of the spaceflight qualification and deployment of such a detector array, along with its performance for certain analytes of interest in manned life support applications, are reviewed and summarized in this article.

  1. Determination of cadmium in water samples by fast pyrolysis-chemical vapor generation atomic fluorescence spectrometry

    NASA Astrophysics Data System (ADS)

    Zhang, Jingya; Fang, Jinliang; Duan, Xuchuan

    2016-08-01

    A pyrolysis-vapor generation procedure to determine cadmium by atomic fluorescence spectrometry has been established. Under fast pyrolysis, cadmium ion can be reduced to volatile cadmium species by sodium formate. The presence of thiourea enhanced the efficiency of cadmium vapor generation and eliminated the interference of copper. The possible mechanism of vapor generation of cadmium was discussed. The optimization of the parameters for pyrolysis-chemical vapor generation, including pyrolysis temperature, amount of sodium formate, concentration of hydrochloric acid, and carrier argon flow rate were carried out. Under the optimized conditions, the absolute and concentration detection limits were 0.38 ng and 2.2 ng ml- 1, respectively, assuming that 0.17 ml of sample was injected. The generation efficiency of was 28-37%. The method was successfully applied to determine trace amounts of cadmium in two certified reference materials of Environmental Water (GSB07-1185-2000 and GSBZ 50009-88). The results were in good agreement with the certified reference values.

  2. Prediction of Chemical Vapor Deposition Rates on Monofilaments and Its Implications for Fiber Properties

    NASA Technical Reports Server (NTRS)

    Gokoglu, S. A.; Kuczmarski, M.; Veitch, L. C.

    1992-01-01

    Deposition rates are predicted in a cylindrical upflow reactor designed for chemical vapor deposition (CVD) on monofilaments. Deposition of silicon from silane in a hydrogen carrier gas is chosen as a relevant example. The effects of gas and surface chemistry are studied in a two-dimensional axisymmetric flow field for this chemically well-studied system. Model predictions are compared to experimental CVD rate measurements. The differences in some physical and chemical phenomena between such small diameter (about 150 microns) fiber substrates and other typical CVD substrates are highlighted. The influence of the Soret mass transport mechanism is determined to be extraordinarily significant. The difficulties associated with the accurate measurement and control of the fiber temperature are discussed. Model prediction sensitivities are investigated with respect to fiber temperatures, fiber radii, Soret transport, and chemical kinetic parameters. The implications of the predicted instantaneous rates are discussed relative to the desired fiber properties for both the batch and the continuous processes.

  3. Quantum Chemical Simulation of Carbon Nanotube Nucleation on Al2O3 Catalysts via CH4 Chemical Vapor Deposition.

    PubMed

    Page, Alister J; Saha, Supriya; Li, Hai-Bei; Irle, Stephan; Morokuma, Keiji

    2015-07-29

    We present quantum chemical simulations demonstrating how single-walled carbon nanotubes (SWCNTs) form, or "nucleate", on the surface of Al2O3 nanoparticles during chemical vapor deposition (CVD) using CH4. SWCNT nucleation proceeds via the formation of extended polyyne chains that only interact with the catalyst surface at one or both ends. Consequently, SWCNT nucleation is not a surface-mediated process. We demonstrate that this unusual nucleation sequence is due to two factors. First, the π interaction between graphitic carbon and Al2O3 is extremely weak, such that graphitic carbon is expected to desorb at typical CVD temperatures. Second, hydrogen present at the catalyst surface actively passivates dangling carbon bonds, preventing a surface-mediated nucleation mechanism. The simulations reveal hydrogen's reactive chemical pathways during SWCNT nucleation and that the manner in which SWCNTs form on Al2O3 is fundamentally different from that observed using "traditional" transition metal catalysts. PMID:26148208

  4. Flexible electrochemical capacitors based on polypyrrole/carbon fibers via chemical polymerization of pyrrole vapor

    NASA Astrophysics Data System (ADS)

    Yuan, Wei; Han, Gaoyi; Xiao, Yaoming; Chang, Yunzhen; Liu, Cuixian; Li, Miaoyu; Li, Yanping; Zhang, Ying

    2016-07-01

    Polypyrrole (PPy) has been deposited on the carbon fibers (CFs) via chemical oxidation of monomer vapor strategy, during which FeCl3·6H2O in acetonitrile adsorbed on CFs acts as oxidant to polymerize the pyrrole vapor. The morphologies and capacitive properties of the PPy deposited on CFs (PPy/CFs) are strongly influenced by the concentration of oxidant used in the process. The assembled flexible capacitors by using PPy/CFs as electrodes and LiCl/polyvinyl alcohol as gel electrolyte have been evaluated by cyclic voltammetry, galvanostatic charge/discharge and electrochemical impedance spectroscopy. The results show that the composites of PPy/CFs prepared by using 350 mg mL-1 FeCl3·6H2O as oxidant (PPy/CFs-350) exhibit relatively higher specific capacitance and good rate capability. Compared with PPy/CFs prepared by electrochemical deposition (retaining 5% of the initial capacitance), the PPy/CFs prepared by chemically polymerizing monomer vapor shows excellent stability (retaining 85% of initial capacitance after 5000 cycles). Furthermore, cells fabricated by PPy/CFs show a fairly good performance under various bending states, three cells of PPy/CFs-350 connected in series can light up a light emitting diode with a voltage threshold of about 2.5 V for approximate 10 min after being charged for about 3 min, revealing the potential of the cells' practical applications.

  5. Aerosol-Assisted Chemical Vapor Deposited Thin Films for Space Photovoltaics

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; McNatt, Jeremiah; Dickman, John E.; Jin, Michael H.-C.; Banger, Kulbinder K.; Kelly, Christopher V.; AquinoGonzalez, Angel R.; Rockett, Angus A.

    2006-01-01

    Copper indium disulfide thin films were deposited via aerosol-assisted chemical vapor deposition using single source precursors. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties in order to optimize device-quality material. Growth at atmospheric pressure in a horizontal hot-wall reactor at 395 C yielded best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier, smoother, denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands (1.45, 1.43, 1.37, and 1.32 eV) and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was 1.03 percent.

  6. Uptake rate constants and partition coefficients for vapor phase organic chemicals using semipermeable membrane devices (SPMDs)

    USGS Publications Warehouse

    Cranor, W.L.; Alvarez, D.A.; Huckins, J.N.; Petty, J.D.

    2009-01-01

    To fully utilize semipermeable membrane devices (SPMDs) as passive samplers in air monitoring, data are required to accurately estimate airborne concentrations of environmental contaminants. Limited uptake rate constants (kua) and no SPMD air partitioning coefficient (Ksa) existed for vapor-phase contaminants. This research was conducted to expand the existing body of kinetic data for SPMD air sampling by determining kua and Ksa for a number of airborne contaminants including the chemical classes: polycyclic aromatic hydrocarbons, organochlorine pesticides, brominated diphenyl ethers, phthalate esters, synthetic pyrethroids, and organophosphate/organosulfur pesticides. The kuas were obtained for 48 of 50 chemicals investigated and ranged from 0.03 to 3.07??m3??g-1??d-1. In cases where uptake was approaching equilibrium, Ksas were approximated. Ksa values (no units) were determined or estimated for 48 of the chemicals investigated and ranging from 3.84E+5 to 7.34E+7. This research utilized a test system (United States Patent 6,877,724 B1) which afforded the capability to generate and maintain constant concentrations of vapor-phase chemical mixtures. The test system and experimental design employed gave reproducible results during experimental runs spanning more than two years. This reproducibility was shown by obtaining mean kua values (n??=??3) of anthracene and p,p???-DDE at 0.96 and 1.57??m3??g-1??d-1 with relative standard deviations of 8.4% and 8.6% respectively.

  7. MICHIGAN SOIL VAPOR EXTRACTION REMEDIATION (MISER) MODEL: A COMPUTER PROGRAM TO MODEL SOIL VAPOR EXTRACTION AND BIOVENTING OF ORGANIC CHEMICALS IN UNSATURATED GEOLOGICAL MATERIAL

    EPA Science Inventory

    Soil vapor extraction (SVE) and bioventing (BV) are proven strategies for remediation of unsaturated zone soils. Mathematical models are powerful tools that can be used to integrate and quantify the interaction of physical, chemical, and biological processes occurring in field sc...

  8. Field emission properties of porous diamond-like films produced by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Mammana, V. P.; Santos, T. E. A.; Mammana, A. P.; Baranauskas, V.; Ceragioli, Helder J.; Peterlevitz, A. C.

    2002-10-01

    The field emission properties of "porous diamond-like" carbon structures have been characterized. A hot filament chemical vapor deposition system fed with ethyl alcohol vapor diluted in helium was used to deposit the samples. Morphological analysis by field emission scanning electron microscopy revealed that they had a highly porous structure, which was attributed to the modification of the kinetics of the carbon deposition process due to the presence of helium as a buffer gas. Micro-Raman spectroscopy showed two peaks in the graphene and microcrystalline graphite frequencies and a new peak at 1620 cm-1. Low threshold fields (Et) and hysteresis in the current versus voltage characteristic have been observed, and a model to explain the hysteresis is proposed.

  9. Continuous growth of single-wall carbon nanotubes using chemical vapor deposition

    DOEpatents

    Grigorian, Leonid; Hornyak, Louis; Dillon, Anne C; Heben, Michael J

    2014-09-23

    The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

  10. Continuous growth of single-wall carbon nanotubes using chemical vapor deposition

    DOEpatents

    Grigorian, Leonid; Hornyak, Louis; Dillon, Anne C; Heben, Michael J

    2008-10-07

    The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

  11. Chemical Vapor Deposition Synthesis and Raman Spectroscopic Characterization of Large-Area Graphene Sheets

    NASA Astrophysics Data System (ADS)

    Liao, Chun-Da; Lu, Yi-Ying; Tamalampudi, Srinivasa Reddy; Cheng, Hung-Chieh; Chen, Yit-Tsong

    2013-10-01

    We present a chemical vapor deposition (CVD) method to catalytically synthesize large-area, transferless, single- to few-layer graphene sheets using hexamethyldisilazane (HMDS) on a SiO2/Si substrate as a carbon source and thermally evaporated alternating Ni/Cu/Ni layers as a catalyst. The as-synthesized graphene films were characterized by Raman spectroscopic imaging to identify single- to few-layer sheets. This HMDS-derived graphene layer is continuous over the entire growth substrate, and single- to trilayer mixed sheets can be up to 30 -m in the lateral dimension. With the synthetic CVD method proposed here, graphene can be grown into tailored shapes directly on a SiO2/Si surface through vapor priming of HMDS onto predefined photolithographic patterns. The transparent and conductive HMDS-derived graphene exhibits its potential for widespread electronic and opto-electronic applications.

  12. High rate epitaxy of silicon thick films by medium pressure plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Kambara, M.; Yagi, H.; Sawayanagi, M.; Yoshida, T.

    2006-04-01

    Homoepitaxial silicon thick films have been produced by medium pressure plasma chemical vapor deposition at rates as fast as 60 nm/s and at a temperature of around 700 °C, with a silane gas partial pressure of 4 mTorr. The continuous transition of the film structures from agglomerated to faceted columnar and to epitaxial planar structure was observed with an increase in the plasma power. The calorimetric analysis during deposition has also confirmed that the thermal boundary layer thickness between the plasma and substrate reduced with the increasing power and became comparable to the mean free path of the vapors when epitaxy was achieved at high rates. In addition, the rate for epitaxial growth was observed to increase linearly with silane gas partial pressure. These potentially indicate that less coagulated silicon atom clusters formed in the reduced boundary thickness have contributed effectively to the high rate epitaxial growth.

  13. Functionalization of multi-walled carbon nanotubes using water-assisted chemical vapor deposition

    SciTech Connect

    Ran Maofei; Sun Wenjing; Liu Yan; Chu Wei; Jiang Chengfa

    2013-01-15

    A simple and novel method, water-assisted chemical vapor deposition (CVD) was developed to functionalize multi-walled carbon nanotubes (MWCNTs) during the synthesis process. The functionalized MWCNTs were characterized using Raman spectroscopy, XPS, TGA, NH{sub 3}-TPD, SEM and HR-TEM. It was found that new defects are introduced and the amount of acidic groups is increased on the MWCNT surface during the water-assisted CVD process. The amount of C-OH and C-O group on the MWCNT surface is found to be increased from 21.1% to 42% with water vapor assistance. Density functional theory (DFT) was employed to study the chemical behavior of water vapor molecule on the catalyst particle surface of Ni(1 1 1) cluster. Based on the experimental and DFT simulation results, a mechanism for functionalization of MWCNTs by water-assisted CVD is proposed. - Graphical abstract: Water is adsorbed and activated on Ni surface, then dissociated into OH and O species, followed by part of OH and O species desorbed from the surface. Finally, the desorbed OH and O species oxidize the unsaturated carbon atoms of carbon nanotubes, form defects and oxygen-containing groups. Highlights: Black-Right-Pointing-Pointer MWCNTs were functionalized by water-assisted CVD method. Black-Right-Pointing-Pointer Defects and weak-medium acidic sites were created on the MWCNT sidewalls. Black-Right-Pointing-Pointer Oxygen-containing groups in functionalized MWCNT were increased from 21.1% to 42%. Black-Right-Pointing-Pointer A mechanism for the influence of water vapor on MWCNTs was proposed.

  14. Copper-vapor-assisted chemical vapor deposition for high-quality and metal-free single-layer graphene on amorphous SiO2 substrate.

    PubMed

    Kim, Hyungki; Song, Intek; Park, Chibeom; Son, Minhyeok; Hong, Misun; Kim, Youngwook; Kim, Jun Sung; Shin, Hyun-Joon; Baik, Jaeyoon; Choi, Hee Cheul

    2013-08-27

    We report that high-quality single-layer graphene (SLG) has been successfully synthesized directly on various dielectric substrates including amorphous SiO2/Si by a Cu-vapor-assisted chemical vapor deposition (CVD) process. The Cu vapors produced by the sublimation of Cu foil that is suspended above target substrates without physical contact catalyze the pyrolysis of methane gas and assist nucleation of graphene on the substrates. Raman spectra and mapping images reveal that the graphene formed on a SiO2/Si substrate is almost defect-free and homogeneous single layer. The overall quality of graphene grown by Cu-vapor-assisted CVD is comparable to that of the graphene grown by regular metal-catalyzed CVD on a Cu foil. While Cu vapor induces the nucleation and growth of SLG on an amorphous substrate, the resulting SLG is confirmed to be Cu-free by synchrotron X-ray photoelectron spectroscopy. The SLG grown by Cu-vapor-assisted CVD is fabricated into field effect transistor devices without transfer steps that are generally required when SLG is grown by regular CVD process on metal catalyst substrates. This method has overcome two important hurdles previously present when the catalyst-free CVD process is used for the growth of SLG on fused quartz and hexagonal boron nitride substrates, that is, high degree of structural defects and limited size of resulting graphene, respectively. PMID:23869700

  15. Chemical and physical sputtering effects on the surface morphology of carbon films grown by plasma chemical vapor deposition

    SciTech Connect

    Vazquez, Luis

    2009-08-01

    We have studied the influence of chemical and physical sputtering on the surface morphology of hydrogenated carbon films deposited on silicon substrates by bias-enhanced electron cyclotron resonance chemical vapor deposition. Atomic force microscopy based power spectrum density (PSD) and roughness analysis have been used to investigate the film morphology. This study has been possible due to the appropriate choice of the experimental variables, in particular, gas mixture, resulting in either nitrogen-free (a-C:H) or nitrogenated carbon (a-CN:H) films, and substrate bias (V{sub b}). Under these conditions, chemical sputtering is present for a-CN:H deposition but it is negligible for a-C:H film growth, while physical sputtering processes appear for both systems for V{sub b}<=-85 V. When physical sputtering does not operate, the film growth with simultaneous chemical sputtering leads to a characteristic a-CN:H granular surface morphology. Furthermore, PSD analysis reveals that a spatial correlation of the a-CN:H film surface roughness, up to distances approx300 nm, becomes a fingerprint of the coexistence of growth and chemical erosion processes on the film morphology. However, once physical sputtering takes place, the influence of chemical sputtering by reactive nitrogen species on the final surface morphology becomes negligible and both a-CN:H and a-C:H film morphologies are ultrasmooth.

  16. Chemical vapor deposition of ceramic coatings on metals and ceramic fibers

    NASA Astrophysics Data System (ADS)

    Nable, Jun Co

    2005-07-01

    The research presented in this study consists of two major parts. The first part is about the development of ceramic coatings on metals by chemical vapor deposition (CVD) and metal-organic chemical vapor deposition (MOCVD). Ceramics such as Al2O3 and Cr2O3, are used as protective coatings for materials used at elevated temperatures (>700°C). These metal oxides either exhibit oxidation resistance or have been used as environmental bond coats. Conventional methods of coating by chemical vapor deposition requires deposition temperatures of >950°C which could damage the substrate material during the coating process. Lower deposition temperatures (400 to 600°C) by MOCVD of these metal oxides were successful on Ni metal substrates. Surface modification such as pre-oxidation and etching were also investigated. In addition, a novel approach for the CVD of TiN on metals was developed. This new approach utilizes ambient pressure conditions which lead to deposition temperatures of 800°C or lower compared to conventional CVD of TiN at 1000°C. Titanium nitride can be used as an abrasive and wear coating on cutting and grinding tools. This nitride can also serve as a diffusion coating in metals. The second major part of this research involves the synthesis of interfacial coatings on ceramic reinforcing fibers for ceramic matrix composites. Aluminum and chromium oxides were deposited onto SiC, and Al2O3-SiO 2 fibers by MOCVD. The effects of the interface coatings on the tensile strength of ceramic fibers are also discussed. New duplex interface coatings consisting of BN or TiN together with Al2O3 or ZrO 2 were also successfully deposited and evaluated on SiC fibers.

  17. Significance of vapor phase chemical reactions on CVD rates predicted by chemically frozen and local thermochemical equilibrium boundary layer theories

    NASA Technical Reports Server (NTRS)

    Gokoglu, Suleyman A.

    1988-01-01

    This paper investigates the role played by vapor-phase chemical reactions on CVD rates by comparing the results of two extreme theories developed to predict CVD mass transport rates in the absence of interfacial kinetic barrier: one based on chemically frozen boundary layer and the other based on local thermochemical equilibrium. Both theories consider laminar convective-diffusion boundary layers at high Reynolds numbers and include thermal (Soret) diffusion and variable property effects. As an example, Na2SO4 deposition was studied. It was found that gas phase reactions have no important role on Na2SO4 deposition rates and on the predictions of the theories. The implications of the predictions of the two theories to other CVD systems are discussed.

  18. Chemical Species in the Vapor Phase of Hanford Double-Shell Tanks: Potential Impacts on Waste Tank Corrosion Processes

    SciTech Connect

    Felmy, Andrew R.; Qafoku, Odeta; Arey, Bruce W.; Boomer, Kayle D.

    2010-09-22

    The presence of corrosive and inhibiting chemicals on the tank walls in the vapor space, arising from the waste supernatant, dictate the type and degree of corrosion that occurs there. An understanding of how waste chemicals are transported to the walls and the affect on vapor species from changing supernatant chemistry (e.g., pH, etc.), are basic to the evaluation of risks and impacts of waste changes on vapor space corrosion (VSC). In order to address these issues the expert panel workshop on double-shell tank (DST) vapor space corrosion testing (RPP-RPT-31129) participants made several recommendations on the future data and modeling needs in the area of DST corrosion. In particular, the drying of vapor phase condensates or supernatants can form salt or other deposits at the carbon steel interface resulting in a chemical composition at the near surface substantially different from that observed directly in the condensates or the supernatants. As a result, over the past three years chemical modeling and experimental studies have been performed on DST supernatants and condensates to predict the changes in chemical composition that might occur as condensates or supernatants equilibrate with the vapor space species and dry at the carbon steel surface. The experimental studies included research on both the chemical changes that occurred as the supernatants dried as well as research on how these chemical changes impact the corrosion of tank steels. The chemical modeling and associated experimental studies were performed at the Pacific Northwest National Laboratory (PNNL) and the research on tank steel corrosion at the Savannah River National Laboratory (SRNL). This report presents a summary of the research conducted at PNNL with special emphasis on the most recent studies conducted in FY10. An overall summary of the project results as well as their broader implications for vapor space corrosion of the DST’s is given at the end of this report.

  19. Growth of 2D black phosphorus film from chemical vapor deposition.

    PubMed

    Smith, Joshua B; Hagaman, Daniel; Ji, Hai-Feng

    2016-05-27

    Phosphorene, a novel 2D material isolated from bulk black phosphorus (BP), is an intrinsic p-type material with a variable bandgap for a variety of applications. However, these applications are limited by the inability to isolate large films of phosphorene. Here we present an in situ chemical vapor deposition type approach that demonstrates progress towards growth of large area 2D BP with average areas >3 μm2 and thicknesses representing samples around four layers and thicker samples with average areas >100 μm2. Transmission electron microscopy and Raman spectroscopy have confirmed successful growth of 2D BP from red phosphorus. PMID:27087456

  20. Synthesize of N-doped Carbon nanotube according to gas flow rate by Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Kim, J. B.; Kim, C. D.; Kong, S. J.; Kim, J. H.; Min, B. K.; Jung, W. S.; Lee, H. R.

    2011-12-01

    Nitrogen-doped (N-doped) Carbon nanotubes (CNTs) have been prepared by Thermal Chemical Vapor Deposition (CVD). As doping accompanies with the recombination of carbon atoms into CNTs in the CVD process, N atoms can be substitutionally doped into the CNTs lattice, which is hard to realize by other synthetic methods. The synthesis technique and the characteristic analysis of N-doped CNT will move up the industrialization and the basic study of CNT. We will elucidate the basic properties of CNT such as the structural characteristics of the N-doped CNT material and study for the industrial application of the N-doped CNTs to the electrode of fuel cell.

  1. Microstructure and properties of multiphase and functionally graded materials prepared by chemical vapor deposition

    SciTech Connect

    Lee, W.Y.

    1996-05-01

    The synthesis of multiphase and functionally graded materials by chemical vapor deposition is discussed from a perspective of controlling their composition and microstructure at a nano-scale level, and ultimately, tailoring their material properties. Prior research is briefly reviewed to address the current state of this novel material concept. Recent experimental results relating to controlling the selected properties of two multiphase systems, TiN + MoS{sub 2} and NiAl + Al{sub 2}O{sub 3}, are described to illustrate this concept`s potential merits and challenges for use in realistic applications.

  2. Optical properties of epitaxial single-crystal chemical-vapor-deposited diamond

    NASA Astrophysics Data System (ADS)

    Turri, Giorgio; Chen, Ying; Bass, Michael; Orchard, David; Butler, James E.; Magana, Sally; Feygelson, Tatayana; Thiel, Derrick; Fourspring, Kevin; Pentony, Joni; Hawkins, Samantha; Baronowski, Meghan; Dewees, Randle V.; Seltzer, Michael D.; Guenthner, Andrew; Harris, Daniel C.; Stickley, C. Martin

    2007-04-01

    Epitaxial single-crystal chemical-vapor-deposited diamond was obtained from Element Six Ltd. (Ascot, UK) and from Apollo Diamond (Boston, MA). Both companies provided 5 x 5 mm squares with thicknesses ranging from 0.5 to 1.5 mm. In addition, Element Six provided 10-mm-diameter disks with a thickness of 1.0 mm. The absorptance of all specimens at 1064 nm was measured by laser calorimetry, with good agreement between independent measurements at the University of Central Florida and at QinetiQ (Malvern, UK). Depolarization at 1064 nm and ultraviolet absorption properties are also reported.

  3. Templated growth of diamond optical resonators via plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhang, X.; Hu, E. L.

    2016-08-01

    We utilize plasma-enhanced chemical vapor deposition through a patterned silica mask for templated diamond growth to create optical resonators. The pyramid-shaped structures have quality factors Q up to 600, measured using confocal photoluminescence spectroscopy, and mode volumes V as small as 2.5 (λ/n) 3 for resonances at wavelengths λ between 550 and 650 nm, and refractive index n, obtained using finite-difference time-domain simulations. Bright luminescence from nitrogen-vacancy and silicon-vacancy centers in the grown diamond is observed. The resonator design and fabrication technique obviates any etching of diamond, which preserves emitter properties in a pristine host lattice.

  4. Single crystal chemical vapor deposit diamond detector for energetic plasma measurement in space

    NASA Astrophysics Data System (ADS)

    Ogasawara, K.; Broiles, T. W.; Coulter, K. E.; Dayeh, M. A.; Desai, M. I.; Livi, S. A.; McComas, D. J.; Walther, B. C.

    2015-03-01

    This study reports the performance of single crystal chemical vapor deposit diamond detectors for measuring space plasma and energetic particles: ~7 keV energy resolution for protons with a 14 keV threshold level, and good response linearity for ions and electrons as expected from Monte-Carlo calculations of primary particle energy loss. We investigated that these diamond detectors are able to operate at high temperature (> 70 ° C) and have fast response times (< 1 ns rise time). While silicon detectors have proven capability over this energy range for space plasma measurements, diamond detectors offer a faster response, higher temperature operation, greater radiation tolerance, and immunity to light.

  5. Metal organic chemical vapor deposition of phase change Ge1Sb2Te4 nanowires.

    PubMed

    Longo, Massimo; Fallica, Roberto; Wiemer, Claudia; Salicio, Olivier; Fanciulli, Marco; Rotunno, Enzo; Lazzarini, Laura

    2012-03-14

    The self-assembly of Ge(1)Sb(2)Te(4) nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, catalyzed by Au nanoislands in a narrow range of temperatures and deposition pressures. In the optimized conditions of 400 °C, 50 mbar, the NWs are Ge(1)Sb(2)Te(4) single hexagonal crystals. Phase change memory switching was reversibly induced by nanosecond current pulses through metal-contacted NWs with threshold voltage of about 1.35 V.

  6. Spectroscopic signatures of AA' and AB stacking of chemical vapor deposited bilayer MoS2

    DOE PAGESBeta

    Xia, Ming; Li, Bo; Yin, Kuibo; Capellini, Giovanni; Niu, Gang; Gong, Yongji; Zhou, Wu; Ajayan, Pulickel M.; Xie, Ya -Hong

    2015-11-04

    We discuss prominent resonance Raman and photoluminescence spectroscopic differences between AA'and AB stacked bilayer molybdenum disulfide (MoS2) grown by chemical vapor deposition are reported. Bilayer MoS2 islands consisting of the two stacking orders were obtained under identical growth conditions. Also, resonance Raman and photoluminescence spectra of AA' and AB stacked bilayer MoS2 were obtained on Au nanopyramid surfaces under strong plasmon resonance. Both resonance Raman and photoluminescence spectra show distinct features indicating clear differences in interlayer interaction between these two phases. The implication of these findings on device applications based on spin and valley degrees of freedom.

  7. Simulation of chemical-vapor-deposited silicon carbide for a cold wall vertical reactor

    NASA Astrophysics Data System (ADS)

    Lee, Y. L.; Sanchez, J. M.

    1997-07-01

    The growth rate of silicon carbide obtained by low-pressure chemical vapor deposition from tetramethylsilane is numerically simulated for a cold wall vertical reactor. The transport equations for momentum, heat, and mass transfer are simultaneously solved by employing the finite volume method. A model for reaction rate is also proposed in order to predict the measured growth rates [A. Figueras, S. Garelik, J. Santiso, R. Rodroguez-Clemente, B. Armas, C. Combescure, R. Berjoan, J.M. Saurel and R. Caplain, Mater. Sci. Eng. B 11 (1992) 83]. Finally, the effects of thermal diffusion on the growth rate are investigated.

  8. Oxygen and hydrogen effects on the chemical vapor deposition of aluminum nitride films

    SciTech Connect

    Aspar, B.; Armas, B.; Combescure, C. ); Figueras, A.; Rodriguez-Clemente, R. ); Mazel, A.; Kihn, Y.; Sevely, J. )

    1993-06-01

    Aluminum nitride has been obtained by chemical vapor deposition using AlCl[sub 3] and NH[sub 3] as precursors. Progressive introduction of N[sub 2]0 in the gas mixture has shown the possibility of inserting oxygen in the AlN lattice. This involves strong changes of surface morphology of the deposit and the formation of less-crystallized materials. When hydrogen is added to the gas mixture, these effects are reduced, Electron energy loss spectroscopy has shown that, in this case, oxygen is mainly concentrated on the external parts of AlN crystals, the structure of which has been found consistent with the wurtzite structure.

  9. Development of a polysilicon process based on chemical vapor deposition, phase 1

    NASA Technical Reports Server (NTRS)

    Plahutnik, F.; Arvidson, A.; Sawyer, D.

    1982-01-01

    The goal of this program is to demonstrate that a dichlorosilane-based reductive chemical vapor deposition (CVD) process is capable of producing, at low cost, high quality polycrystalline silicon. Physical form and purity of this material will be consistent with LSA material requirements for use in the manufacture of high efficiency solar cells. Four polysilicon deposition runs were completed in an intermediate size reactor using dichlorosilane fed from 250 pound cylinders. Results from the intermediate size reactor are consistent with those obtained earlier with a small experimental reactor. Modifications of two intermediate size reactors were completed to interface with the dichlorosilane process demonstration unit (PDU).

  10. Convection and mass-transport in laser-induced chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Patnaik, S.; Brown, R. A.

    1988-01-01

    Gas flow and energy and species transport in laser-induced chemical vapor deposition (LICVD) of amorphous silicon films by silane pyrolysis are analyzed by finite element analysis of a two-dimensional model for the process. Spatial nonuniformity of the deposited film is shown to result from diffusion controlled transport of products between the beam and substrate. Deposition profiles are affected by buoyancy-driven convection only at increased gas pressures. Horizontal orientation of the reactor with respect to gravity is optimal because the stagnation-like flow, that results adjacent to the substrate, enhances mixing, and smoothes the film profile.

  11. Thermodynamic Analysis and Growth of Zirconium Carbide by Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Wei, Sun; Hua, Hao Zheng; Xiang, Xiong

    Equilibrium calculations were used to optimize conditions for the chemical vapor deposition of zirconium carbide from zirconium halide + CxHy+H2+Ar system. The results show the CVD-ZrC phase diagram is divided into ZrC+C, ZrC and ZrC+Zr zones by C, Zr generating lines. For the same mole of ZrCl4 reactant, it needs higher concentration of CH4 to generate single ZrC phase than that of C3H6. Using these calculations as a guide, single-phase cubic zirconium carbide coatings were deposited onto graphite substrate.

  12. Observation of spin-charge conversion in chemical-vapor-deposition-grown single-layer graphene

    SciTech Connect

    Ohshima, Ryo; Sakai, Atsushi; Ando, Yuichiro; Shiraishi, Masashi; Shinjo, Teruya; Kawahara, Kenji; Ago, Hiroki

    2014-10-20

    Conversion of pure spin current to charge current in single-layer graphene (SLG) is investigated by using spin pumping. Large-area SLG grown by chemical vapor deposition is used for the conversion. Efficient spin accumulation in SLG by spin pumping enables observing an electromotive force produced by the inverse spin Hall effect (ISHE) of SLG. The spin Hall angle of SLG is estimated to be 6.1 × 10{sup −7}. The observed ISHE in SLG is ascribed to its non-negligible spin-orbit interaction in SLG.

  13. Method of making AlInSb by metal-organic chemical vapor deposition

    DOEpatents

    Biefeld, Robert M.; Allerman, Andrew A.; Baucom, Kevin C.

    2000-01-01

    A method for producing aluminum-indium-antimony materials by metal-organic chemical vapor deposition (MOCVD). This invention provides a method of producing Al.sub.X In.sub.1-x Sb crystalline materials by MOCVD wherein an Al source material, an In source material and an Sb source material are supplied as a gas to a heated substrate in a chamber, said Al source material, In source material, and Sb source material decomposing at least partially below 525.degree. C. to produce Al.sub.x In.sub.1-x Sb crystalline materials wherein x is greater than 0.002 and less than one.

  14. Chemical vapor deposition of Ti-Si-N films for diffusion barrier applications

    SciTech Connect

    Smith, P.M.; Custer, J.S.; Jones, R.V.

    1995-11-01

    Structurally disordered refractory ternary films such as titanium silicon nitride (Ti-Si-N) have potential as advanced diffusion barriers in future ULSI metallization schemes. The authors demonstrate chemical vapor deposition (CVD) of Ti-Si-N-containing films in a commercially available single-wafer CVD system using two different Ti precursors, TiCl{sub 4} and tetrakis(diethylamino)titanium (TDEAT). In particular, the TDEAT-based films can be grown conformally with low impurity content, and are promising candidates for advanced diffusion barrier applications.

  15. Synthesis and Characterization of Tin(IV) Oxide Obtained by Chemical Vapor Deposition Method.

    PubMed

    Nagirnyak, Svitlana V; Lutz, Victoriya A; Dontsova, Tatiana A; Astrelin, Igor M

    2016-12-01

    The effect of precursors on the characteristics of tin oxide obtained by chemical vapor deposition (CVD) method was investigated. The synthesis of nanosized tin(IV) oxide was carried out with the use of two different precursors: tin(II) oxalate obtained using tin chloride(II) and oxalic acid; tin(II) oxalate obtained using tin chloride(II); and ammonium oxalate. The synthesized tin(IV) oxide samples were studied by electron microscopy, X-ray diffraction and optical spectra. The lattice parameters of tin(IV) oxide samples were defined, the bandgap of samples were calculated. PMID:27456501

  16. Studies on non-oxide coating on carbon fibers using plasma enhanced chemical vapor deposition technique

    NASA Astrophysics Data System (ADS)

    Patel, R. H.; Sharma, S.; Prajapati, K. K.; Vyas, M. M.; Batra, N. M.

    2016-05-01

    A new way of improving the oxidative behavior of carbon fibers coated with SiC through Plasma Enhanced Chemical Vapor Deposition technique. The complete study includes coating of SiC on glass slab and Stainless steel specimen as a starting test subjects but the major focus was to increase the oxidation temperature of carbon fibers by PECVD technique. This method uses relatively lower substrate temperature and guarantees better stoichiometry than other coating methods and hence the substrate shows higher resistance towards mechanical and thermal stresses along with increase in oxidation temperature.

  17. Spectroscopic Signatures of AA' and AB Stacking of Chemical Vapor Deposited Bilayer MoS2.

    PubMed

    Xia, Ming; Li, Bo; Yin, Kuibo; Capellini, Giovanni; Niu, Gang; Gong, Yongji; Zhou, Wu; Ajayan, Pulickel M; Xie, Ya-Hong

    2015-12-22

    Prominent resonance Raman and photoluminescence spectroscopic differences between AA' and AB stacked bilayer molybdenum disulfide (MoS2) grown by chemical vapor deposition are reported. Bilayer MoS2 islands consisting of the two stacking orders were obtained under identical growth conditions. Resonance Raman and photoluminescence spectra of AA' and AB stacked bilayer MoS2 were obtained on Au nanopyramid surfaces under strong plasmon resonance. Both resonance Raman and photoluminescence spectra show distinct features indicating clear differences in interlayer interaction between these two phases. The implication of these findings on device applications based on spin and valley degrees of freedom will be discussed. PMID:26536495

  18. Boron coating on boron nitride coated nuclear fuels by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Durmazuçar, Hasan H.; Gündüz, Güngör

    2000-12-01

    Uranium dioxide-only and uranium dioxide-gadolinium oxide (5% and 10%) ceramic nuclear fuel pellets which were already coated with boron nitride were coated with thin boron layer by chemical vapor deposition to increase the burn-up efficiency of the fuel during reactor operation. Coating was accomplished from the reaction of boron trichloride with hydrogen at 1250 K in a tube furnace, and then sintering at 1400 and 1525 K. The deposited boron was identified by infrared spectrum. The morphology of the coating was studied by using scanning electron microscope. The plate, grainy and string (fiber)-like boron structures were observed.

  19. MgB2 superconducting whiskers synthesized by using the hybrid physical-chemical vapor deposition.

    PubMed

    Wang, Yazhou; Zhuang, Chenggang; Gao, Jingyun; Shan, Xudong; Zhang, Jingmin; Liao, Zhimin; Xu, Hongjun; Yu, Dapeng; Feng, Qingrong

    2009-02-25

    In this work, MgB(2) whiskers were fabricated on a copper substrate by using the hybrid physical-chemical vapor deposition, which was one of the most effective ways to make high quality pure MgB(2) films, with the possible growth mechanism discussed. The whiskers are hexagonal and conelike and grow along the [0001] direction with a single-crystal structure. The onset transition temperature is approximately 39 K, which is among the best in the published nanostructure MgB(2) papers. Fabrication of nanoscale MgB(2) whiskers provides the fundamental understanding of the effect of dimensionality and size on superconductivity.

  20. MgB2 ultrathin films fabricated by hybrid physical chemical vapor deposition and ion milling

    NASA Astrophysics Data System (ADS)

    Acharya, Narendra; Wolak, Matthäus A.; Tan, Teng; Lee, Namhoon; Lang, Andrew C.; Taheri, Mitra; Cunnane, Dan; Karasik, Boris. S.; Xi, X. X.

    2016-08-01

    In this letter, we report on the structural and transport measurements of ultrathin MgB2 films grown by hybrid physical-chemical vapor deposition followed by low incident angle Ar ion milling. The ultrathin films as thin as 1.8 nm, or 6 unit cells, exhibit excellent superconducting properties such as high critical temperature (Tc) and high critical current density (Jc). The results show the great potential of these ultrathin films for superconducting devices and present a possibility to explore superconductivity in MgB2 at the 2D limit.

  1. Synthesis and Characterization of Tin(IV) Oxide Obtained by Chemical Vapor Deposition Method

    NASA Astrophysics Data System (ADS)

    Nagirnyak, Svitlana V.; Lutz, Victoriya A.; Dontsova, Tatiana A.; Astrelin, Igor M.

    2016-07-01

    The effect of precursors on the characteristics of tin oxide obtained by chemical vapor deposition (CVD) method was investigated. The synthesis of nanosized tin(IV) oxide was carried out with the use of two different precursors: tin(II) oxalate obtained using tin chloride(II) and oxalic acid; tin(II) oxalate obtained using tin chloride(II); and ammonium oxalate. The synthesized tin(IV) oxide samples were studied by electron microscopy, X-ray diffraction and optical spectra. The lattice parameters of tin(IV) oxide samples were defined, the bandgap of samples were calculated.

  2. Chemical vapor deposition techniques and related methods for manufacturing microminiature thermionic converters

    DOEpatents

    King, Donald B.; Sadwick, Laurence P.; Wernsman, Bernard R.

    2002-06-25

    Methods of manufacturing microminiature thermionic converters (MTCs) having high energy-conversion efficiencies and variable operating temperatures using MEMS manufacturing techniques including chemical vapor deposition. The MTCs made using the methods of the invention incorporate cathode to anode spacing of about 1 micron or less and use cathode and anode materials having work functions ranging from about 1 eV to about 3 eV. The MTCs also exhibit maximum efficiencies of just under 30%, and thousands of the devices can be fabricated at modest costs.

  3. Improvement of uniformity in chemical vapor deposition of silicon carbide by using CFD

    NASA Astrophysics Data System (ADS)

    Seo, Jin-Won; Kim, Jun-Woo; Choi, Kyoon; Lee, Jong-Heun

    2016-01-01

    The chemical vapor deposition (CVD) of silicon carbide (SiC) on carbon has been widely used as a general method to suppress dust generation on carbon surfaces. For a CH3SiCl3 (MTS) and hydrogen system, computational fluid dynamic simulations to predict the growth rate of the silicon carbide are performed. The results of the simulations are consistent with the experimental results where the deposition rate depends highly on the H/Si composition and the specimen's location. This simulation can provide guidance in optimizing the CVD process and improving the apparatus for CVD of SiC.

  4. Microstructural modification of nc-Si/SiOx films during plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhang, X. W.

    2005-07-01

    Nanocrystalline-silicon embedded silicon oxide films are prepared by plasma-enhanced chemical vapor deposition (PECVD) at 300 °C without post-heat treatment. Measurements of XPS, IR, XRD, and HREM are performed. Microstructural modifications are found occurring throughout the film deposition. The silica network with a high oxide state is suggested to be formed directly under the abduction of the former deposited layer, rather than processing repeatedly from the original low-oxide state of silica. Nanocrystalline silicon particles with a size of 6-10 nm are embedded in the SiOx film matrix, indicating the potential application in Si-based optoelectronic integrity.

  5. Shape correction of optical surfaces using plasma chemical vaporization machining with a hemispherical tip electrode.

    PubMed

    Takino, Hideo; Yamamura, Kazuya; Sano, Yasuhisa; Mori, Yuzo

    2012-01-20

    We propose a plasma chemical vaporization machining device with a hemispherical tip electrode for optical fabrication. Radio-frequency plasma is generated close to the electrode under atmospheric conditions, and a workpiece is scanned relative to the stationary electrode under three-axis motion control to remove target areas on a workpiece surface. Experimental results demonstrate that surface removal progresses although process gas is not forcibly supplied to the plasma. The correction of shape errors on conventionally polished spheres is performed. As a result, highly accurate smooth surfaces with the desired rms shape accuracy of 3 nm are successfully obtained, which confirms that the device is effective for the fabrication of optics.

  6. Characteristics of epitaxial garnets grown by CVD using single metal alloy sources. [Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Besser, P. J.; Hamilton, T. N.; Mee, J. E.; Stermer, R. L.

    1974-01-01

    Single metal alloys have been explored as the cation source in the chemical vapor deposition (CVD) of iron garnets. Growth of good quality single crystal garnet films containing as many as five different cations has been achieved over a wide range of deposition conditions. The relationship of film composition to alloy compositions and deposition conditions has been determined for several materials. By proper choice of the alloy composition and the deposition conditions, uncrazed deposits were grown on (111) gadolinium gallium garnet (GGG) substrates. Data on physical, magnetic and optical properties of representative films is presented and discussed.

  7. Growth of 2D black phosphorus film from chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Smith, Joshua B.; Hagaman, Daniel; Ji, Hai-Feng

    2016-05-01

    Phosphorene, a novel 2D material isolated from bulk black phosphorus (BP), is an intrinsic p-type material with a variable bandgap for a variety of applications. However, these applications are limited by the inability to isolate large films of phosphorene. Here we present an in situ chemical vapor deposition type approach that demonstrates progress towards growth of large area 2D BP with average areas >3 μm2 and thicknesses representing samples around four layers and thicker samples with average areas >100 μm2. Transmission electron microscopy and Raman spectroscopy have confirmed successful growth of 2D BP from red phosphorus.

  8. Second harmonic generation in ZnO thin films fabricated by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Liu, C. Y.; Zhang, B. P.; Binh, N. T.; Segawa, Y.

    2004-07-01

    Second harmonic generation (SHG) from ZnO thin films fabricated by metalorganic chemical vapor deposition (MOCVD) technique was carried out. By comparing the second harmonic signal generated in a series of ZnO films with different deposition temperatures, we conclude that a significant part of second harmonic signal is generated at the film deposited with appropriate temperature. The second-order susceptibility tensor χ(2)zzz=9.2 pm/V was deduced for a film deposited at 250 °C.

  9. Synthesis and Characterization of Tin(IV) Oxide Obtained by Chemical Vapor Deposition Method.

    PubMed

    Nagirnyak, Svitlana V; Lutz, Victoriya A; Dontsova, Tatiana A; Astrelin, Igor M

    2016-12-01

    The effect of precursors on the characteristics of tin oxide obtained by chemical vapor deposition (CVD) method was investigated. The synthesis of nanosized tin(IV) oxide was carried out with the use of two different precursors: tin(II) oxalate obtained using tin chloride(II) and oxalic acid; tin(II) oxalate obtained using tin chloride(II); and ammonium oxalate. The synthesized tin(IV) oxide samples were studied by electron microscopy, X-ray diffraction and optical spectra. The lattice parameters of tin(IV) oxide samples were defined, the bandgap of samples were calculated.

  10. Fabrication of Carbon Nanotubes by Slot-Excited Microwave Plasma-Enhanced Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Shim, Gyu Il; Kojima, Yoshihiro; Kono, Satoshi; Ohno, Yutaka; Ishijima, Tatsuo

    2008-07-01

    Carbon nanotubes (CNTs) are fabricated by adopting plasma-enhanced chemical vapor deposition (PECVD) with a planar microwave plasma source. Plasma is produced by a slot antenna at 2.45-GHz microwave injection in CH4/H2 mixture. In this study, it is shown that avoiding the exposure of the substrate to the plasma drastically improves the CNT growth. Furthermore, it is found that the CNT quality can be controlled with the optimization of one of the steps in the catalyst treatment, such as the preheating procedure; the treated catalyst is considered to be unaffected by the heating in the high-density microwave plasma treatment during the CNT growth.

  11. Fabrication of Carbon Nanotube Field Effect Transistors Using Plasma-Enhanced Chemical Vapor Deposition Grown Nanotubes

    NASA Astrophysics Data System (ADS)

    Ohnaka, Hirofumi; Kojima, Yoshihiro; Kishimoto, Shigeru; Ohno, Yutaka; Mizutani, Takashi

    2006-06-01

    Single-walled carbon nanotubes are grown using grid-inserted plasma-enhanced chemical vapor deposition (PECVD). The field effect transistor operation was confirmed using the PECVD grown carbon nanotubes (CNTs). The preferential growth of the semiconducting nanotubes was confirmed in the grid-inserted PECVD by measuring current-voltage (I-V) characteristics of the devices. Based on the measurement of the electrical breakdown of the metallic CNTs, the probability of growing the semiconducting nanotubes has been estimated to be more than 90%.

  12. Influence of Alumina Reaction Tube Impurities on the Oxidation of Chemically-Vapor-Deposited Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth

    1995-01-01

    Pure coupons of chemically vapor deposited (CVD) SiC were oxidized for 100 h in dry flowing oxygen at 1300 C. The oxidation kinetics were monitored using thermogravimetry (TGA). The experiments were first performed using high-purity alumina reaction tubes. The experiments were then repeated using fused quartz reaction tubes. Differences in oxidation kinetics, scale composition, and scale morphology were observed. These differences were attributed to impurities in the alumina tubes. Investigators interested in high-temperature oxidation of silica formers should be aware that high-purity alumina can have significant effects on experiment results.

  13. Chemical Vapor Deposition of Phosphorous- and Boron-Doped Graphene Using Phenyl-Containing Molecules.

    PubMed

    Mekan Ovezmyradov; Magedov, Igor V; Frolova, Liliya V; Chandler, Gary; Garcia, Jill; Bethke, Donald; Shaner, Eric A; Kalugin, Nikolai G

    2015-07-01

    Simultaneous chemical vapor deposition (CVD) of graphene and "in-situ" phosphorous or boron doping of graphene was accomplished using Triphenylphosphine (TPP) and 4-Methoxyphenylboronic acid (4-MPBA). The TPP and 4-MPBA molecules were sublimated and supplied along with CH4 molecules during graphene growth at atmospheric pressure. The grown graphene samples were characterized using Raman spectroscopy. Phosphorous and boron presence in phosphorous and boron doped graphene was confirmed with Auger electron spectroscopy. The possibility of obtaining phosphorous and boron doped graphene using solid-source molecule precursors via CVD can lead to an easy and rapid production of modified large area graphene.

  14. Tunneling characteristics in chemical vapor deposited graphene–hexagonal boron nitride–graphene junctions

    SciTech Connect

    Roy, T.; Hesabi, Z. R.; Joiner, C. A.; Vogel, E. M.; Liu, L.; Gu, G.; Barrera, S. de la; Feenstra, R. M.; Chakrabarti, B.

    2014-03-24

    Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate graphene–hexagonal boron nitride–graphene symmetric field effect transistors. Gate control of the tunneling characteristics is observed similar to previously reported results for exfoliated graphene–hexagonal boron nitride–graphene devices. Density-of-states features are observed in the tunneling characteristics of the devices, although without large resonant peaks that would arise from lateral momentum conservation. The lack of distinct resonant behavior is attributed to disorder in the devices, and a possible source of the disorder is discussed.

  15. Catalytic chemical vapor deposition of single-wall carbon nanotubes at low temperatures.

    PubMed

    Cantoro, Mirco; Hofmann, Stephan; Pisana, Simone; Scardaci, Vittorio; Parvez, Atlus; Ducati, Caterina; Ferrari, Andrea C; Blackburn, Arthur M; Wang, Kai-You; Robertson, John

    2006-06-01

    We report surface-bound growth of single-wall carbon nanotubes (SWNTs) at temperatures as low as 350 degrees C by catalytic chemical vapor deposition from undiluted C2H2. NH3 or H2 exposure critically facilitates the nanostructuring and activation of sub-nanometer Fe and Al/Fe/Al multilayer catalyst films prior to growth, enabling the SWNT nucleation at lower temperatures. We suggest that carbon nanotube growth is governed by the catalyst surface without the necessity of catalyst liquefaction.

  16. Observation of defects in mercury cadmium telluride crystals grown by chemical vapor transport

    NASA Technical Reports Server (NTRS)

    Irene, E. A.; Tierney, E.; Wiedemeier, H.; Chandra, D.

    1983-01-01

    A mixture of nitric and hydrochloric acids was found to yield etch pits on mercury cadmium telluride crystals grown by chemical vapor transport using iodine or mercuric iodide as the transport agent. Two types of pits were observed by optical microscopy: triangular pyramidal and round saucer shaped pits. Transmission electron microscopy confirmed that two types of defects were present: dislocations and second phase occlusions. The present study suggests that the defects are near the crystal surface and therefore will probably not significantly affect the electrical characteristics.

  17. Multi-Walled Carbon Nanotube Growth in Multi-Walled Carbon Nanotubes by Chemical Vapor Deposition.

    PubMed

    Hasegawa, Takayuki; Arenas, Daniel J; Kohno, Hideo

    2015-02-01

    We report chemical vapor deposition (CVD) growth of a multi-walled carbon nanotube (MWCNT) inside another MWCNTs from a cementite (Fe3C) catalyst nanoparticles. The CNTs have bi or tri-layered core(s)-sheath structure with various crystallinity. The sheath grows first at a lower temperature, and then the catalyst nanoparticle works again to grow the core(s) at a higher temperature in the tip or root growth mode. Transmission electron microscopy (TEM) observation provides a clear piece of evidence of reverse-inward growth. PMID:26353735

  18. Aromatic chemicals by iron-catalyzed hydrotreatment of lignin pyrolysis vapor.

    PubMed

    Olcese, Roberto Nicolas; Lardier, George; Bettahar, Mohammed; Ghanbaja, Jaafar; Fontana, Sébastien; Carré, Vincent; Aubriet, Frédéric; Petitjean, Dominique; Dufour, Anthony

    2013-08-01

    Lignin is a potential renewable material for the production of bio-sourced aromatic chemicals. We present the first hydrotreatment of lignin pyrolysis vapors, before any condensation, using inexpensive and sustainable iron-silica (Fe/SiO2 ) and iron-activated carbon (Fe/AC) catalysts. Lignin pyrolysis was conducted in a tubular reactor and vapors were injected in a fixed bed of catalysts (673 K, 1 bar) with stacks to investigate the profile of coke deposit. More than 170 GC-analyzable compounds were identified by GCxGC (heart cutting)/flame ionization detector mass spectrometry. Lignin oligomers were analyzed by very high resolution mass spectrometry, called the "petroleomic" method. They are trapped by the catalytic fixed bed and, in particular, by the AC. The catalysts showed a good selectivity for the hydrodeoxygenation of real lignin vapors to benzene, toluene, xylenes, phenol, cresols, and alkyl phenols. The spent catalysts were characterized by temperature-programmed oxidation, transmission electron microscopy (TEM), and N2 sorption. Micropores in the Fe/AC catalyst are completely plugged by coke deposits, whereas the mesoporous structure of Fe/SiO2 is unaffected. TEM images reveal two different types of coke deposit: 1) catalytic coke deposited in the vicinity of iron particles and 2) thermal coke (carbonaceous particles ≈1 μm in diameter) formed from the gas-phase growth of lignin oligomers.

  19. Opportunities and challenges in GaN metal organic chemical vapor deposition for electron devices

    NASA Astrophysics Data System (ADS)

    Matsumoto, Koh; Yamaoka, Yuya; Ubukata, Akinori; Arimura, Tadanobu; Piao, Guanxi; Yano, Yoshiki; Tokunaga, Hiroki; Tabuchi, Toshiya

    2016-05-01

    The current situation and next challenge in GaN metal organic chemical vapor deposition (MOCVD) for electron devices of both GaN on Si and GaN on GaN are presented. We have examined the possibility of increasing the growth rate of GaN on 200-mm-diameter Si by using a multiwafer production MOCVD machine, in which the vapor phase parasitic reaction is well controlled. The impact of a high-growth-rate strained-layer-superlattice (SLS) buffer layer is presented in terms of material properties. An SLS growth rate of as high as 3.46 µm/h, which was 73% higher than the current optimum, was demonstrated. As a result, comparable material properties were obtained. Next, a typical result of GaN doped with Si of 1 × 1016 cm-3 grown at the growth rate of 3.7 µm/h is shown. For high-voltage application, we need a thick high-purity GaN drift layer with a low carbon concentration, of less than 1016 cm-3. It is shown that achieving a high growth rate by precise control of the vapor phase reaction is still challenge in GaN MOCVD.

  20. Functionalized bioinspired microstructured optical fiber pores for applications in chemical vapor sensing

    NASA Astrophysics Data System (ADS)

    Calkins, Jacob A.

    Chemical vapor sensing for defense, homeland security, environmental, and agricultural application is a challenge, which due combined requirements of ppt sensitivity, high selectivity, and rapid response, cannot be met using conventional analytical chemistry techniques. New sensing approaches and platforms are necessary in order to make progress in this rapidly evolving field. Inspired by the functionalized nanopores on moth sensilla hairs that contribute to the high selectivity and sensitivity of this biological system, a chemical vapor sensor based on the micro to nanoscale pores in microstructured optical fibers (MOFs) was designed. This MOF based chemical vapor sensor design utilizes MOF pores functionalized with organic self-assembled monolayers (SAMs) for selectivity and separations and a gold plasmonic sensor for detection and discrimination. Thin well-controlled gold films in MOF pores are critical components for the fabrication of structured plasmonic chemical vapor sensors. Thermal decomposition of dimethyl Au(II) trifluoroacetylacetonate dissolved in near-critical CO2 was used to deposit gold island films within the MOF pores. Using a 3mercatopropyltrimethoxysilane adhesion layer, continuous gold thin films as thin as 20--30 nm were deposited within MOF pores as small as 500 nm in diameter. The gold island films proved to be SERS active and were used to detect 900 ppt 2,4 DNT vapor in high pressure nitrogen and 6 ppm benzaldehyde. MOF based waveguide Raman (WGR), which can probe the air/silica interface between a waveguiding core and surrounding pores, was developed to detect and characterize SAMs and other thin films deposited in micro to nanoscale MOF pores. MOF based WGR was used to characterize an octadecyltrichlorosilane (OTS) SAM deposited in 1.6 mum diameter pores iv to demonstrate that the SAM was well-formed, uniform along the pore length, and only a single layer. MOF based WGR was used to detect a human serum albumin monolayer deposited on the

  1. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    NASA Astrophysics Data System (ADS)

    Konakov, S. A.; Krzhizhanovskaya, V. V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics. The PECVD technology is inherently multiscale, from macroscale processes in the chemical reactor to atomic-scale surface chemistry. Our macroscale model is based on Navier-Stokes equations for a transient laminar flow of a compressible chemically reacting gas mixture, together with the mass transfer and energy balance equations, Poisson equation for electric potential, electrons and ions balance equations. The chemical kinetics model includes 24 species and 58 reactions: 37 in the gas phase and 21 on the surface. A deposition model consists of three stages: adsorption to the surface, diffusion along the surface and embedding of products into the substrate. A new model has been validated on experimental results obtained with the "Plasmalab System 100" reactor. We present the mathematical model and simulation results investigating the influence of flow rate and source gas proportion on silicon nitride film growth rate and chemical composition.

  2. Metal infiltration into biomaterials by ALD and CVD: a comparative study.

    PubMed

    Lee, Seung-Mo; Pippel, Eckhard; Knez, Mato

    2011-03-14

    Atomic layer deposition (ALD) is a subset of chemical vapor deposition (CVD) and both use very similar chemistry. Recently, it has been reported that ALD has the potential to realize a new design paradigm of bioinorganic materials through metal infiltration, which in nature has been employed as a hardening strategy for many tissues in diverse biological organisms. Herein, using a spider dragline silk and a collagen membrane as targets, we have performed a comparative study to elucidate the difference of the metal infiltration effect by ALD and CVD. From the comparison of mechanical properties, concentration of the infiltrated metal, and structural changes induced by the infiltrated metal, it has been proven that the metal can effectively infiltrate biomaterials by ALD and the infiltrated metal leads to highly improved mechanical properties accompanied by substantial changes in the protein structures, whereas CVD is less effective.

  3. Growth and characterization of boron doped graphene by Hot Filament Chemical Vapor Deposition Technique (HFCVD)

    NASA Astrophysics Data System (ADS)

    Jafari, A.; Ghoranneviss, M.; Salar Elahi, A.

    2016-03-01

    Large-area boron doped graphene was synthesized on Cu foil (as a catalyst) by Hot Filament Chemical Vapor Deposition (HFCVD) using boron oxide powder and ethanol vapor. To investigate the effect of different boron percentages, grow time and the growth mechanism of boron-doped graphene, scanning electron microscopy (SEM), Raman scattering and X-ray photoelectron spectroscopy (XPS) were applied. Also in this experiment, the I-V characteristic carried out for study of electrical property of graphene with keithley 2361 system. Nucleation of graphene domains with an average domain size of ~20 μm was observed when the growth time is 9 min that has full covered on the Cu surface. The Raman spectroscopy show that the frequency of the 2D band down-shifts with B doping, consistent with the increase of the in-plane lattice constant, and a weakening of the B-C in-plane bond strength relative to that of C-C bond. Also the shifts of the G-band frequencies can be interpreted in terms of the size of the C-C ring and the changes in the electronic structure of graphene in the presence of boron atoms. The study of electrical property shows that by increasing the grow time the conductance increases which this result in agree with SEM images and graphene grain boundary. Also by increasing the boron percentage in gas mixer the conductance decreases since doping graphene with boron creates a band-gap in graphene band structure. The XPS results of B doped graphene confirm the existence of boron in doped graphene, which indicates the boron atoms doped in the graphene lattice are mainly in the form of BC3. The results showed that boron-doped graphene can be successfully synthesized using boron oxide powder and ethanol vapor via a HFCVD method and also chemical boron doping can be change the electrical conductivity of the graphene.

  4. Chemical sensing of copper phthalocyanine sol-gel glass through organic vapors

    NASA Astrophysics Data System (ADS)

    Ridhi, R.; Gawri, Isha; Abbas, Saeed J.; Saini, G. S. S.; Tripathi, S. K.

    2015-05-01

    The sensitivities of metallophthalocyanine to vapor phase electron donors has gained significance in many areas and disciplines due to their sensing properties and ease of operation. In the present study the interaction mechanism of organic vapors in Copper Phthalocyanine (CuPc) sol-gel glass has been studied. The interaction mechanism is affected by many factors like morphology, electrical or optical properties of film. CuPc sol-gel glass has been synthesized using chemical route sol-gel method. Its structural characterization was conducted using XRD and the amorphous nature of the silicate glass was observed with characteristic α polymorph phase of CuPc at around 6.64˚ with 13.30Å interplanar spacing. The size of the particle as determined using Debbye Scherre's formula comes out around 15.5 nm. The presence of α phase of CuPc was confirmed using FTIR with the appearance of crystal parameter marker band at 787 cm-1. Apart from this A2u and Eu symmetry bands of CuPc have also been observed. The UV absorption spectrum of CuPc exhibits absorption peaks owing to π→ π* and n→ π* transitions. A blue shift in the prepared CuPc glass has been observed as compared to the dopant CuPc salt indicating increase of band gap. A split in B (Soret) band and Q band appears as observed with the help of Lorentzian fitting. CuPc sol gel glass has been exposed with chemical vapors of Methanol, Benzene and Bromine individually and the electrical measurements have been carried out. These measurements show the variation in conductivity and the interaction mechanism has been analyzed.

  5. Chemical sensing of copper phthalocyanine sol-gel glass through organic vapors

    SciTech Connect

    Ridhi, R.; Gawri, Isha; Abbas, Saeed J.; Saini, G. S. S.; Tripathi, S. K.

    2015-05-15

    The sensitivities of metallophthalocyanine to vapor phase electron donors has gained significance in many areas and disciplines due to their sensing properties and ease of operation. In the present study the interaction mechanism of organic vapors in Copper Phthalocyanine (CuPc) sol-gel glass has been studied. The interaction mechanism is affected by many factors like morphology, electrical or optical properties of film. CuPc sol-gel glass has been synthesized using chemical route sol-gel method. Its structural characterization was conducted using XRD and the amorphous nature of the silicate glass was observed with characteristic α polymorph phase of CuPc at around 6.64° with 13.30Å interplanar spacing. The size of the particle as determined using Debbye Scherre’s formula comes out around 15.5 nm. The presence of α phase of CuPc was confirmed using FTIR with the appearance of crystal parameter marker band at 787 cm-1. Apart from this A2u and Eu symmetry bands of CuPc have also been observed. The UV absorption spectrum of CuPc exhibits absorption peaks owing to π→ π* and n→ π* transitions. A blue shift in the prepared CuPc glass has been observed as compared to the dopant CuPc salt indicating increase of band gap. A split in B (Soret) band and Q band appears as observed with the help of Lorentzian fitting. CuPc sol gel glass has been exposed with chemical vapors of Methanol, Benzene and Bromine individually and the electrical measurements have been carried out. These measurements show the variation in conductivity and the interaction mechanism has been analyzed.

  6. Fabrication of ultrathin and highly uniform silicon on insulator by numerically controlled plasma chemical vaporization machining.

    PubMed

    Sano, Yasuhisa; Yamamura, Kazuya; Mimura, Hidekazu; Yamauchi, Kazuto; Mori, Yuzo

    2007-08-01

    Metal-oxide semiconductor field-effect transistors fabricated on a silicon-on-insulator (SOI) wafer operate faster and at a lower power than those fabricated on a bulk silicon wafer. Scaling down, which improves their performances, demands thinner SOI wafers. In this article, improvement on the thinning of SOI wafers by numerically controlled plasma chemical vaporization machining (PCVM) is described. PCVM is a gas-phase chemical etching method in which reactive species generated in atmospheric-pressure plasma are used. Some factors affecting uniformity are investigated and methods for improvements are presented. As a result of thinning a commercial 8 in. SOI wafer, the initial SOI layer thickness of 97.5+/-4.7 nm was successfully thinned and made uniform at 7.5+/-1.5 nm.

  7. New sources for chemical vapor transport growth of zinc oxide nanowires

    NASA Astrophysics Data System (ADS)

    Wright, Cody; Tzolov, Marian

    2015-03-01

    Zinc Oxide (ZnO) nanowires have attracted scientific interest due to their optical and piezoelectric properties. Chemical vapor transport is a simple and effective growth method. We have shown previously that the nature of the chemical reactions excludes carbon from incorporating the in the nanowires and the presence of carbon monoxide can modify the growth significantly. Building on these findings, we have developed new sources modifying the presence of carbon monoxide during the growth. We will present our findings of the source consumption and the morphology of the formed zinc oxide nanowires. These results are the base of our model for the processes within the source and in the growth zone. We are showing that the formation of thin, high aspect ratio nanowires is promoted by the presence of carbon monoxide during the growth. We will present evidence for the significance of the reactions in the gas mixture on the nanowire formation.

  8. Simultaneous Chemical and Optical Patterning of Polyacrylonitrile Film by Vapor-Based Reaction.

    PubMed

    Shin, Jae-Won; Lee, Choonghyeon; Cha, Sang-Ho; Jang, Jyongsik; Lee, Kyung Jin

    2015-06-01

    The surface of polyacrylonitrile (PAN) film is treated with ethyleneamines (EDA) in a simple chemical vapor phase reaction. Successful introduction of amine functional groups on the cyano group of PAN backbone is verified by FT-IR and NMR measurements. Further UV-vis and photoluminescence analyses show a red shift of the emission peak after repeated EDA treatment, which might be attributed to the formation of imine conjugation from newly formed carbon-nitrogen bonds on the PAN backbone. Further confocal laser scanning microscopy reveals that selective patterning of EDA on PAN films is possible via local polydimethylsiloxane masking. The results indicate that both chemical and optical patterning on PAN film can be realized via a single reaction and show the potential of this novel methodology in selective patterning.

  9. Characterization of chemical-vapor-deposited low-k thin films using x-ray porosimetry

    NASA Astrophysics Data System (ADS)

    Lee, Hae-Jeong; Lin, Eric K.; Bauer, Barry J.; Wu, Wen-li; Hwang, Byung Keun; Gray, William D.

    2003-02-01

    Trimethylsilane-based carbon-doped silica films prepared with varying chemical-vapor-deposition process conditions were characterized using x-ray reflectivity and porosimetry to measure the film thickness, average film density, density depth profile, wall density, and porosity. Samples deposited under single or dual frequency conditions with either N2O or O2 as an oxidant were compared. The structural parameters were correlated with the chemical bond structure measured by Fourier transform infrared spectroscopy. The density profiles of the porous films were uniform with a slight densification at the film surface. The distribution of pores was also uniform through the film. Films prepared under a single frequency and/or N2O atmosphere had the lowest film density, wall density, and dielectric constant. The porosities of the films were similar and the pore sizes were less than 10 Å.

  10. Nucleation Chemical Physics: From Vapor Phase Clusters to Crystals in Solution

    SciTech Connect

    Kathmann, Shawn M.

    2007-08-03

    Both vapor-phase clusters and condensed-phase crystals are important in a wide variety of fundamental and applied problems in chemical physics. Favorable fluctuations in a supersaturated phase generate clusters of the new phase – exactly how one defines these new clusters as distinct from the mother phase represents a continuing challenge in molecular theories of nucleation. These incipient clusters can form homogeneously within the mother phase or heterogeneously on seeds, dust, impurities, ions, or others stability-inducing atomic/molecular structures (e.g., steps, edges, vacancies, etc.). Upon reaching a critical size the clusters may grow to macroscopic dimensions if enough nucleating material is present in surrounding environment or until relaxation processes dominate bringing the phase transformation to completion. This work was supported by the Chemical and Material Sciences Division, Office of Basic Energy Sciences, Department of Energy. The Pacific Northwest National Laboratory is operated by Battelle for the US Department of Energy.

  11. Synthesis of carbon nanowall by plasma-enhanced chemical vapor deposition method.

    PubMed

    Liu, Rulin; Chi, Yaqing; Fang, Liang; Tang, Zhensen; Yi, Xun

    2014-02-01

    Plasma-enhanced chemical vapor deposition (PECVD) is widely used for the synthesis of carbon materials, such as diamond-like carbons (DLCs), carbon nanotubes (CNTs) and carbon nanowalls (CNWs). Advantages of PECVD are low synthesis temperature compared with thermal CVD and the ability to grow vertically, free-standing structures. Due to its self-supported property and high specific surface area, CNWs are a promising material for field emission devices and other chemical applications. This article reviews the recent process on the synthesis of CNW by the PECVD method. We briefly introduce the structure and properties of CNW with characterization techniques. Growth mechanism is also discussed to analyze the influence of plasma conditions, substrates, temperature, and other parameters to the final film, which will give a suggestion on parameter modulation for desired film. PMID:24749447

  12. Simultaneous Chemical and Optical Patterning of Polyacrylonitrile Film by Vapor-Based Reaction.

    PubMed

    Shin, Jae-Won; Lee, Choonghyeon; Cha, Sang-Ho; Jang, Jyongsik; Lee, Kyung Jin

    2015-06-01

    The surface of polyacrylonitrile (PAN) film is treated with ethyleneamines (EDA) in a simple chemical vapor phase reaction. Successful introduction of amine functional groups on the cyano group of PAN backbone is verified by FT-IR and NMR measurements. Further UV-vis and photoluminescence analyses show a red shift of the emission peak after repeated EDA treatment, which might be attributed to the formation of imine conjugation from newly formed carbon-nitrogen bonds on the PAN backbone. Further confocal laser scanning microscopy reveals that selective patterning of EDA on PAN films is possible via local polydimethylsiloxane masking. The results indicate that both chemical and optical patterning on PAN film can be realized via a single reaction and show the potential of this novel methodology in selective patterning. PMID:25855336

  13. Low Temperature Direct Growth of Graphene Films on Transparent Substrates by Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Antoine, Geoffrey Sandosh Jeffy

    Graphene, two dimensional sheet of carbon atoms has recently gained attention as some of its properties are very useful for electronics, optoelectronics and photovoltaic applications. Its high mobility makes it useful in radio-frequency applications and its transparency makes it useful as transparent electrodes in photovoltaics. It is known that chemical vapor deposition (CVD) is one of the techniques that can be used to synthesize graphene. A lot of work has been done on selecting appropriate substrates and hydrocarbon sources. Nickel, having a high solubility at high temperatures has been in focus lately. Ethylene which has a lower breaking point compared to other hydrocarbons has a good efficiency in the synthesis of graphene. Complexity associated with graphene synthesis and transfers onto transparent substrates constitute the major obstacles to using this material for photovoltaics and optoelectronics applications. Here we show a novel method of obtaining graphene directly on glass via chemical vapor deposition (CVD) using ethylene as the hydrocarbon source and nickel as the catalyst. The low cracking temperature of ethylene which is 542.8 °C permits us to use glass substrates directly in the CVD furnace. To improve the thickness of graphene, a good manipulation of pressure and hydrogen during the growth process will be useful. We introduce a novel catalyst etching technique after the growth results in graphene settling down on the glass substrate in a transfer-free process. Raman spectroscopy indicated good uniformity and high quality before and after the etching process.

  14. Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications

    SciTech Connect

    Kagan, Harris; Kass, Richard; Gan, K. K.

    2014-01-23

    With the LHC upgrades in 2013, and further LHC upgrades scheduled in 2018, most LHC experiments are planning for detector upgrades which require more radiation hard technologies than presently available. At present all LHC experiments now have some form of diamond detector. As a result Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of all LHC experiments. Moreover CVD diamond is now being discussed as an alternative sensor material for tracking very close to the interaction region of the HL-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications. Our accomplishments include: • Developed a two U.S.companies to produce electronic grade diamond, • Worked with companies and acquired large area diamond pieces, • Performed radiation hardness tests using various proton energies: 70 MeV (Cyric, Japan), 800 MeV (Los Alamos), and 24 GeV (CERN).

  15. Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond

    SciTech Connect

    Ohtani, Ryota; Yamamoto, Takashi; Janssens, Stoffel D.; Yamasaki, Satoshi

    2014-12-08

    Microwave plasma enhanced chemical vapor deposition is a promising way to generate n-type, e.g., phosphorus-doped, diamond layers for the fabrication of electronic components, which can operate at extreme conditions. However, a deeper understanding of the doping process is lacking and low phosphorus incorporation efficiencies are generally observed. In this work, it is shown that systematically changing the internal design of a non-commercial chemical vapor deposition chamber, used to grow diamond layers, leads to a large increase of the phosphorus doping efficiency in diamond, produced in this device, without compromising its electronic properties. Compared to the initial reactor design, the doping efficiency is about 100 times higher, reaching 10%, and for a very broad doping range, the doping efficiency remains highly constant. It is hypothesized that redesigning the deposition chamber generates a higher flow of active phosphorus species towards the substrate, thereby increasing phosphorus incorporation in diamond and reducing deposition of phosphorus species at reactor walls, which additionally reduces undesirable memory effects.

  16. Graphene-assisted growth of high-quality AlN by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zeng, Qing; Chen, Zhaolong; Zhao, Yun; Wei, Tongbo; Chen, Xiang; Zhang, Yun; Yuan, Guodong; Li, Jinmin

    2016-08-01

    High-quality AlN films were directly grown on graphene/sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The graphene layers were directly grown on sapphire by atmospheric-pressure chemical vapor deposition (APCVD), a low-cost catalyst-free method. We analyzed the influence of the graphene layer on the nucleation of AlN at the initial stage of growth and found that sparse AlN grains on graphene grew and formed a continuous film via lateral coalescence. Graphene-assisted AlN films are smooth and continuous, and the full width at half maximum (FWHM) values for (0002) and (10\\bar{1}2) reflections are 360 and 622.2 arcsec, which are lower than that of the film directly grown on sapphire. The high-resolution TEM images near the AlN/sapphire interface for graphene-assisted AlN films clearly show the presence of graphene, which kept its original morphology after the 1200 °C growth of AlN.

  17. Suitable alkaline for graphene peeling grown on metallic catalysts using chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Karamat, S.; Sonuşen, S.; Çelik, Ü.; Uysallı, Y.; Oral, A.

    2016-04-01

    In chemical vapor deposition, the higher growth temperature roughens the surface of the metal catalyst and a delicate method is necessary for the transfer of graphene from metal catalyst to the desired substrates. In this work, we grow graphene on Pt and Cu foil via ambient pressure chemical vapor deposition (AP-CVD) method and further alkaline water electrolysis was used to peel off graphene from the metallic catalyst. We used different electrolytes i.e., sodium hydroxide (NaOH), potassium hydroxide (KOH), lithium hydroxide (LiOH) and barium hydroxide Ba(OH)2 for electrolysis, hydrogen bubbles evolved at the Pt cathode (graphene/Pt/PMMA stack) and as a result graphene layer peeled off from the substrate without damage. The peeling time for KOH and LiOH was ∼6 min and for NaOH and Ba(OH)2 it was ∼15 min. KOH and LiOH peeled off graphene very efficiently as compared to NaOH and Ba(OH)2 from the Pt electrode. In case of copper, the peeling time is ∼3-5 min. Different characterizations like optical microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and atomic force microscopy were done to analyze the as grown and transferred graphene samples.

  18. Polymer Thin Films and Surface Modification by Chemical Vapor Deposition: Recent Progress.

    PubMed

    Chen, Nan; Kim, Do Han; Kovacik, Peter; Sojoudi, Hossein; Wang, Minghui; Gleason, Karen K

    2016-06-01

    Chemical vapor deposition (CVD) polymerization uses vapor phase monomeric reactants to synthesize organic thin films directly on substrates. These thin films are desirable as conformal surface engineering materials and functional layers. The facile tunability of the films and their surface properties allow successful integration of CVD thin films into prototypes for applications in surface modification, device fabrication, and protective films. CVD polymers also bridge microfabrication technology with chemical and biological systems. Robust coatings can be achieved via CVD methods as antifouling, anti-icing, and antihydrate surfaces, as well as stimuli-responsive or biocompatible polymers and novel nanostructures. Use of low-energy input, modest vacuum, and room-temperature substrates renders CVD polymerization compatible with thermally sensitive substrates and devices. Compared with solution-based methods, CVD is particularly useful for insoluble materials, such as electrically conductive polymers and controllably crosslinked networks, and has the potential to reduce environmental, health, and safety impacts associated with solvents. This review discusses the relevant background and selected applications of recent advances by two methods that display and use the high retention of the organic functional groups from their respective monomers, initiated CVD (iCVD) and oxidative CVD (oCVD) polymerization. PMID:27276550

  19. Opening of triangular hole in triangular-shaped chemical vapor deposited hexagonal boron nitride crystal

    PubMed Central

    Sharma, Subash; Kalita, Golap; Vishwakarma, Riteshkumar; Zulkifli, Zurita; Tanemura, Masaki

    2015-01-01

    In-plane heterostructure of monolayer hexagonal boron nitride (h-BN) and graphene is of great interest for its tunable bandgap and other unique properties. Here, we reveal a H2-induced etching process to introduce triangular hole in triangular-shaped chemical vapor deposited individual h-BN crystal. In this study, we synthesized regular triangular-shaped h-BN crystals with the sizes around 2-10 μm on Cu foil by chemical vapor deposition (CVD). The etching behavior of individual h-BN crystal was investigated by annealing at different temperature in an H2:Ar atmosphere. Annealing at 900 °C, etching of h-BN was observed from crystal edges with no visible etching at the center of individual crystals. While, annealing at a temperature ≥950 °C, highly anisotropic etching was observed, where the etched areas were equilateral triangle-shaped with same orientation as that of original h-BN crystal. The etching process and well-defined triangular hole formation can be significant platform to fabricate planar heterostructure with graphene or other two-dimensional (2D) materials. PMID:25994455

  20. Synthesis of silicon nanowires using tin catalyst by hot wire chemical vapor processing

    SciTech Connect

    Meshram, Nagsen; Kumbhar, Alka; Dusane, R.O.

    2013-06-01

    Highlights: ► Silicon nanowires are grown by hot wire chemical vapor processing at 400 °C using Sn as catalyst material via VLS. ► For nanowire synthesis Sn nanotemplates are formed with hot wire generated atomic hydrogen. ► The TEM image reveals the crystalline nature of nanowire. - Abstract: Silicon nanowires (SiNWs) have been synthesized at temperatures in the range 300–400 °C by the hot wire chemical vapor processing (HWCVP) using tin nanotemplate. The tin nano-template is formed by hot wire atomic hydrogen treatment of thermally evaporated Sn films (∼300 nm thick) on glass substrates. Silicon nanowires are then grown using hot wire induced dissociation of SiH{sub 4} gas over the nanotemplate. Growth conditions like growth time and temperature were varied to study their effect on the tin nanoparticle size and on the silicon nanowire dimensions thereafter. From the observations, it is clear that the nanowire diameters and lengths depend on the size of nanoparticles and the growth time respectively. Though SiNWs were observed to grow at temperatures as low as 300 °C, nanowires with a narrow diameter distribution were achieved at 400 °C. Raman spectra and transmission electron microscope (TEM) reveal the crystalline nature of the silicon nanowires.

  1. Patterned growth of carbon nanotubes obtained by high density plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Mousinho, A. P.; Mansano, R. D.

    2015-03-01

    Patterned growth of carbon nanotubes by chemical vapor deposition represents an assembly approach to place and orient nanotubes at a stage as early as when they are synthesized. In this work, the carbon nanotubes were obtained at room temperature by High Density Plasmas Chemical Vapor Deposition (HDPCVD) system. This CVD system uses a new concept of plasma generation, where a planar coil coupled to an RF system for plasma generation was used with an electrostatic shield for plasma densification. In this mode, high density plasmas are obtained. We also report the patterned growth of carbon nanotubes on full 4-in Si wafers, using pure methane plasmas and iron as precursor material (seed). Photolithography processes were used to pattern the regions on the silicon wafers. The carbon nanotubes were characterized by micro-Raman spectroscopy, the spectra showed very single-walled carbon nanotubes axial vibration modes around 1590 cm-1 and radial breathing modes (RBM) around 120-400 cm-1, confirming that high quality of the carbon nanotubes obtained in this work. The carbon nanotubes were analyzed by atomic force microscopy and scanning electron microscopy too. The results showed that is possible obtain high-aligned carbon nanotubes with patterned growth on a silicon wafer with high reproducibility and control.

  2. High-performance chemical sensing using Schottky-contacted chemical vapor deposition grown monolayer MoS2 transistors.

    PubMed

    Liu, Bilu; Chen, Liang; Liu, Gang; Abbas, Ahmad N; Fathi, Mohammad; Zhou, Chongwu

    2014-05-27

    Trace chemical detection is important for a wide range of practical applications. Recently emerged two-dimensional (2D) crystals offer unique advantages as potential sensing materials with high sensitivity, owing to their very high surface-to-bulk atom ratios and semiconducting properties. Here, we report the first use of Schottky-contacted chemical vapor deposition grown monolayer MoS2 as high-performance room temperature chemical sensors. The Schottky-contacted MoS2 transistors show current changes by 2-3 orders of magnitude upon exposure to very low concentrations of NO2 and NH3. Specifically, the MoS2 sensors show clear detection of NO2 and NH3 down to 20 ppb and 1 ppm, respectively. We attribute the observed high sensitivity to both well-known charger transfer mechanism and, more importantly, the Schottky barrier modulation upon analyte molecule adsorption, the latter of which is made possible by the Schottky contacts in the transistors and is not reported previously for MoS2 sensors. This study shows the potential of 2D semiconductors as high-performance sensors and also benefits the fundamental studies of interfacial phenomena and interactions between chemical species and monolayer 2D semiconductors.

  3. Investigation of forced and isothermal chemical vapor infiltrated SiC/SiC ceramic matrix composites. Final report

    SciTech Connect

    Sankar, J.; Kelkar, A.D.; Vaidyanathan, R.

    1993-09-01

    Mechanical properties of two different layups for each of the forced CVI (41 specimens) and isothermal CVI (36 specimens) materials were investigated in air at room temperature (RT), 1000C, and at room temperature after thermal shock (RT/TS) and exposure to oxidation (RT/OX). The FCVI specimens had a nominal interfacial coating thickness of 0.3 {mu}m of pyrolytic carbon, while CVI specimens had a coating thickness of 0.1 {mu}m. Effect of reinforcement and interfacial bond on mechanical properties of composite were investigated. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were employed to analyze the fiber-matrix interface and the toughening mechanisms in this ceramic composite system.

  4. Determination of fracture toughness in 2-D woven SiC matrix composites made by chemical vapor infiltration

    SciTech Connect

    Droillard, C.; Voisard, P.; Heibst, C.; Lamon, J.

    1995-05-01

    An approach to the R-curve behavior of 2-D woven ceramic matrix composites is proposed. This approach takes into account the presence of a process zone at the crack tip. The strain energy release rate is determined using an equivalent system of two specimens free of process zones. The process zone size is determined independently by assimilating a notch tip region to a beam of bimaterial. Compact tension specimens having different dimensions and single-edge notched beam specimens were used for the analysis. Important trends in toughening of ceramic matrix composites were anticipated.

  5. Heteroepitaxial growth of 3-5 semiconductor compounds by metal-organic chemical vapor deposition for device applications

    NASA Technical Reports Server (NTRS)

    Collis, Ward J.; Abul-Fadl, Ali

    1988-01-01

    The purpose of this research is to design, install and operate a metal-organic chemical vapor deposition system which is to be used for the epitaxial growth of 3-5 semiconductor binary compounds, and ternary and quaternary alloys. The long-term goal is to utilize this vapor phase deposition in conjunction with existing current controlled liquid phase epitaxy facilities to perform hybrid growth sequences for fabricating integrated optoelectronic devices.

  6. Adhesion and chemical vapor testing of second surface silver/glass solar mirrors

    SciTech Connect

    Dake, L.S.; Lind, M.A.

    1980-09-01

    Second surface silvered glass mirrors supplied by four different commercial manufacturers were evaluated for silver-to-glass adhesion and resistance to chemical vapor attack. The mirrors were chemically silvered on identical substrates of low iron float glass. Experiments were performed in order to assess the viability of using adhesion and chemical attack as screening tests for predicting the relative long-term durability of solar mirrors. The results of these tests will be compared at a future time with the survivability of field mirrors deployed in stationary exposure racks at ten locations throughout the United States. The adhesion tests were performed using a commercially-available thin film tensile pull tester in which a stud bonded to the film is pulled and the yield load recorded. Numerous subtleties regarding the selection of the adhesive used to bond the study and the validity of the testing procedure are discussed. Several different methods of normalizing the results were attempted in an effort to reduce the scatter in the data. The same set of samples were exposed to salt spray, water, HCl, H/sub 2/SO/sub 4/, and HNO/sub 3/ vapors and then ranked according to their performance. Visual comparison of tested samples did not yield consistent results; however, definite trends were observed favoring one of the manufacturers. Some SEM/EDX analysis was performed on these mirrors subject to accelerated degradation in order to compare them to mirrors subject to natural degradation. However, insufficient data has been collected to show that any of the tests performed will accurately predict the relative life expectancy of the mirrors in an outdoor environment.

  7. Modeling chemical vapor deposition of silicon dioxide in microreactors at atmospheric pressure

    NASA Astrophysics Data System (ADS)

    Konakov, S. A.; Krzhizhanovskaya, V. V.

    2015-01-01

    We developed a multiphysics mathematical model for simulation of silicon dioxide Chemical Vapor Deposition (CVD) from tetraethyl orthosilicate (TEOS) and oxygen mixture in a microreactor at atmospheric pressure. Microfluidics is a promising technology with numerous applications in chemical synthesis due to its high heat and mass transfer efficiency and well-controlled flow parameters. Experimental studies of CVD microreactor technology are slow and expensive. Analytical solution of the governing equations is impossible due to the complexity of intertwined non-linear physical and chemical processes. Computer simulation is the most effective tool for design and optimization of microreactors. Our computational fluid dynamics model employs mass, momentum and energy balance equations for a laminar transient flow of a chemically reacting gas mixture at low Reynolds number. Simulation results show the influence of microreactor configuration and process parameters on SiO2 deposition rate and uniformity. We simulated three microreactors with the central channel diameter of 5, 10, 20 micrometers, varying gas flow rate in the range of 5-100 microliters per hour and temperature in the range of 300-800 °C. For each microchannel diameter we found an optimal set of process parameters providing the best quality of deposited material. The model will be used for optimization of the microreactor configuration and technological parameters to facilitate the experimental stage of this research.

  8. Improved detection and false alarm rejection for chemical vapors using passive hyperspectral imaging

    NASA Astrophysics Data System (ADS)

    Marinelli, William J.; Miyashiro, Rex; Gittins, Christopher M.; Konno, Daisei; Chang, Shing; Farr, Matt; Perkins, Brad

    2013-05-01

    Two AIRIS sensors were tested at Dugway Proving Grounds against chemical agent vapor simulants. The primary objectives of the test were to: 1) assess performance of algorithm improvements designed to reduce false alarm rates with a special emphasis on solar effects, and 3) evaluate performance in target detection at 5 km. The tests included 66 total releases comprising alternating 120 kg glacial acetic acid (GAA) and 60 kg triethyl phosphate (TEP) events. The AIRIS sensors had common algorithms, detection thresholds, and sensor parameters. The sensors used the target set defined for the Joint Service Lightweight Chemical Agent Detector (JSLSCAD) with TEP substituted for GA and GAA substituted for VX. They were exercised at two sites located at either 3 km or 5 km from the release point. Data from the tests will be presented showing that: 1) excellent detection capability was obtained at both ranges with significantly shorter alarm times at 5 km, 2) inter-sensor comparison revealed very comparable performance, 3) false alarm rates < 1 incident per 10 hours running time over 143 hours of sensor operations were achieved, 4) algorithm improvements eliminated both solar and cloud false alarms. The algorithms enabling the improved false alarm rejection will be discussed. The sensor technology has recently been extended to address the problem of detection of liquid and solid chemical agents and toxic industrial chemical on surfaces. The phenomenology and applicability of passive infrared hyperspectral imaging to this problem will be discussed and demonstrated.

  9. CHEMICALLY VAPOR DEPOSITED YTTRIA-STABILIZED ZIRCONIA (YSZ) FOR THERMAL AND ENVIRONMENTAL BARRIER COATING

    SciTech Connect

    Varanasi, V.G.; Besmann, T.M.; Lothian, J.L.; Xu, W.; Starr, T.L.

    2003-04-22

    Yttria-stabilized zirconia (YSZ) is used as a thermal barrier coating (TBC) to protect super-alloy blades such as Mar-M247 or Rene-N5 during engine operation. The current method for YSZ fabrication for TBC applications is by air-plasma spraying (APS) or electron beam physical vapor deposition (EB-PVD) (Haynes 1997). APS gives reasonable deposition rates, but has a limited life and aging effects due to its porous and lamellar structure. The EB-PVD coatings are more stable and can accommodate thermomechanical stresses due to their characteristic strain-tolerant, columnar microstructure. EB-PVD, however, is primarily line-of-sight, which often leaves ''hidden areas'' uncoated, has low throughput, and has high capital cost. The process of metal-organic chemical vapor deposition (MOCVD) is investigated here as an economical alternative to EB-PVD and APS, with the potential for better overall coverage as well as the ability to produce thick (100-250 {micro}m), strain-tolerant, columnar coatings. MOCVD of YSZ involves the use of zirconium and yttrium organometallic precursors reacting with an oxygen source. Previous researchers have used diketonate or chloride precursors and oxygen (Wahl et al. 2001a, Wahl et al. 2001b, Yamane and Harai 1989). These precursors have low transport rates due to their low carrier solvent solubility (Varanasi et al. 2003). Solvated zirconium and yttrium butoxide precursors were investigated here due to their higher vapor pressures and high solvent solubility. This work uses predictive equilibrium modeling and experiments involving butoxide precursors for tetragonal YSZ fabrication.

  10. Temperature regulated-chemical vapor deposition for incorporating NiO nanoparticles into mesoporous media

    NASA Astrophysics Data System (ADS)

    Han, Sang Wook; Kim, Il Hee; Kim, Dae Han; Park, Ki Jung; Park, Eun Ji; Jeong, Myung-Geun; Kim, Young Dok

    2016-11-01

    We have developed a novel strategy for incorporating NiO nanoparticles into mesoporous Al2O3 with a mean pore size of ∼12 nm and particle size of ∼1 mm. Ni-precursor vapor and ambient atmosphere were filled in a closed chamber with mesoporous Al2O3, and the chamber was initially heated at ∼100 °C, at which no chemical reaction between the inorganic precursor, oxygen, water vapor in the atmosphere, and the surface of Al2O3 took place. Next, the temperature of the system was increased to 260 °C for deposition of NiO. We found that NiO nanoparticles were not only deposited on the surface, but were also incorporated in a 50 μm-deep region of the mesoporous Al2O3 gel. We also demonstrated high CO oxidation activity and reusability of the deactivated NiO/Al2O3 catalysts prepared by the aforementioned method. These results suggest that our strategy could be widely applicable to the incorporation of various nanoparticles into mesoporous supports.

  11. Initiated chemical vapor deposition of thermoresponsive poly(N-vinylcaprolactam) thin films for cell sheet engineering.

    PubMed

    Lee, Bora; Jiao, Alex; Yu, Seungjung; You, Jae Bem; Kim, Deok-Ho; Im, Sung Gap

    2013-08-01

    Poly(N-vinylcaprolactam) (PNVCL) is a thermoresponsive polymer known to be nontoxic, water soluble and biocompatible. Here, PNVCL homopolymer was successfully synthesized for the first time by use of a one-step vapor-phase process, termed initiated chemical vapor deposition (iCVD). Fourier transform infrared spectroscopy results showed that radical polymerization took place from N-vinylcaprolactam monomers without damaging the functional caprolactam ring. A sharp lower critical solution temperature transition was observed at 31°C from the iCVD poly(N-vinylcaprolactam) (PNVCL) film. The thermoresponsive PNVCL surface exhibited a hydrophilic/hydrophobic alteration with external temperature change, which enabled the thermally modulated attachment and detachment of cells. The conformal coverage of PNVCL film on various substrates with complex topography, including fabrics and nanopatterns, was successfully demonstrated, which can further be utilized to fabricate cell sheets with aligned cell morphology. The advantage of this system is that cells cultured on such thermoresponsive surfaces could be recovered as an intact cell sheet by simply lowering the temperature, eliminating the need for conventional enzymatic treatments.

  12. Design and implementation of a novel portable atomic layer deposition/chemical vapor deposition hybrid reactor.

    PubMed

    Selvaraj, Sathees Kannan; Jursich, Gregory; Takoudis, Christos G

    2013-09-01

    We report the development of a novel portable atomic layer deposition chemical vapor deposition (ALD/CVD) hybrid reactor setup. Unique feature of this reactor is the use of ALD/CVD mode in a single portable deposition system to fabricate multi-layer thin films over a broad range from "bulk-like" multi-micrometer to nanometer atomic dimensions. The precursor delivery system and control-architecture are designed so that continuous reactant flows for CVD and cyclic pulsating flows for ALD mode are facilitated. A custom-written LabVIEW program controls the valve sequencing to allow synthesis of different kinds of film structures under either ALD or CVD mode or both. The entire reactor setup weighs less than 40 lb and has a relatively small footprint of 8 × 9 in., making it compact and easy for transportation. The reactor is tested in the ALD mode with titanium oxide (TiO2) ALD using tetrakis(diethylamino)titanium and water vapor. The resulting growth rate of 0.04 nm/cycle and purity of the films are in good agreement with literature values. The ALD/CVD hybrid mode is demonstrated with ALD of TiO2 and CVD of tin oxide (SnOx). Transmission electron microscopy images of the resulting films confirm the formation of successive distinct TiO2-ALD and SnO(x)-CVD layers. PMID:24089868

  13. Design and implementation of a novel portable atomic layer deposition/chemical vapor deposition hybrid reactor.

    PubMed

    Selvaraj, Sathees Kannan; Jursich, Gregory; Takoudis, Christos G

    2013-09-01

    We report the development of a novel portable atomic layer deposition chemical vapor deposition (ALD/CVD) hybrid reactor setup. Unique feature of this reactor is the use of ALD/CVD mode in a single portable deposition system to fabricate multi-layer thin films over a broad range from "bulk-like" multi-micrometer to nanometer atomic dimensions. The precursor delivery system and control-architecture are designed so that continuous reactant flows for CVD and cyclic pulsating flows for ALD mode are facilitated. A custom-written LabVIEW program controls the valve sequencing to allow synthesis of different kinds of film structures under either ALD or CVD mode or both. The entire reactor setup weighs less than 40 lb and has a relatively small footprint of 8 × 9 in., making it compact and easy for transportation. The reactor is tested in the ALD mode with titanium oxide (TiO2) ALD using tetrakis(diethylamino)titanium and water vapor. The resulting growth rate of 0.04 nm/cycle and purity of the films are in good agreement with literature values. The ALD/CVD hybrid mode is demonstrated with ALD of TiO2 and CVD of tin oxide (SnOx). Transmission electron microscopy images of the resulting films confirm the formation of successive distinct TiO2-ALD and SnO(x)-CVD layers.

  14. Chemical Vapor Deposition of Fluoroalkylsilane Monolayer Films for Adhesion Control in Microelectromechanical Systems

    SciTech Connect

    MAYER,THOMAS M.; DE BOER,MAARTEN P.; SHINN,NEAL D.; CLEWS,PEGGY J.; MICHALSKE,TERRY A.

    2000-01-26

    We have developed a new process for applying a hydrophobic, low adhesion energy coating to microelectromechanical (MEMS) devices. Monolayer films are synthesized from tridecafluoro-1,1,2,2-tetrahydrooctyltrichlorosilane (FOTS) and water vapor in a low-pressure chemical vapor deposition process at room temperature. Film thickness is self-limiting by virtue of the inability of precursors to stick to the fluorocarbon surface of the film once it has formed. We have measured film densities of {approx}3 molecules nm{sup 2} and film thickness of {approx}1 nm. Films are hydrophobic, with a water contact angle >110{sup o}. We have also incorporated an in-situ downstream microwave plasma cleaning process, which provides a clean, reproducible oxide surface prior to film deposition. Adhesion tests on coated and uncoated MEMS test structures demonstrate superior performance of the FOTS coatings. Cleaned, uncoated cantilever beam structures exhibit high adhesion energies in a high humidity environment. An adhesion energy of 100 mJ m{sup -2} is observed after exposure to >90% relative humidity. Fluoroalkylsilane coated beams exhibit negligible adhesion at low humidity and {<=} 20 {micro}J m{sup -2} adhesion energy at >90% relative humidity. No obvious film degradation was observed for films exposed to >90% relative humidity at room temperature for >24 hr.

  15. Ultrathin antifouling coatings with stable surface zwitterionic functionality by initiated chemical vapor deposition (iCVD).

    PubMed

    Yang, Rong; Gleason, Karen K

    2012-08-21

    Antifouling thin films of poly[N,N-dimethyl-N-methacryloxyethyl-N-(3-sulfopropyl)-co-2-(dimethylamino)ethyl methacrylate-co-ethylene glycol dimethacrylate] (PDDE) were synthesized via a substrate-independent and all-dry-initiated chemical vapor deposition (iCVD) technique followed by a diffusion-limited vapor-phase reaction with 1,3-propane sultone. Coated surfaces exhibited very low absorption of various foulants including bovine serum albumin (BSA), humic acid (HA), and sodium alginate (SA), as measured with the quartz crystal microbalance with dissipation monitoring (QCM-D). The fouling by humic acid was dependent on the presence of divalent cations such as Ca(2+). Both depth profiling and angle-resolved X-ray photoelectron spectroscopy (XPS) measurements indicated that the zwitterionic groups were highly concentrated in the top ~3 nm of the film. The contact angle measurements revealed a limited degree of surface chain reorganization upon contacting water. The dynamic contact angles remained unchanged after 100 days of storage in air, indicating the stability of the interface. The coating was substrate-independent, and the film was conformal on surface nanostructures including trenches, reverse osmosis membranes, and electrospun nanofiber mats. PMID:22873558

  16. Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper

    PubMed Central

    Banszerus, Luca; Schmitz, Michael; Engels, Stephan; Dauber, Jan; Oellers, Martin; Haupt, Federica; Watanabe, Kenji; Taniguchi, Takashi; Beschoten, Bernd; Stampfer, Christoph

    2015-01-01

    Graphene research has prospered impressively in the past few years, and promising applications such as high-frequency transistors, magnetic field sensors, and flexible optoelectronics are just waiting for a scalable and cost-efficient fabrication technology to produce high-mobility graphene. Although significant progress has been made in chemical vapor deposition (CVD) and epitaxial growth of graphene, the carrier mobility obtained with these techniques is still significantly lower than what is achieved using exfoliated graphene. We show that the quality of CVD-grown graphene depends critically on the used transfer process, and we report on an advanced transfer technique that allows both reusing the copper substrate of the CVD growth and making devices with mobilities as high as 350,000 cm2 V–1 s–1, thus rivaling exfoliated graphene. PMID:26601221

  17. Thermal metalorganic chemical vapor deposition of Ti-Si-N films for diffusion barrier applications

    SciTech Connect

    Custer, J.S.; Smith, P.M.; Jones, R.V.; Maverick, A.W.; Roberts, D.A.; Norman, J.A.T.; Hochberg, A.K.

    1996-04-01

    Structurally disordered refractory ternary films such as titanium silicon nitride (Ti-Si-N) have potential as advanced diffusion barriers in future ULSI metallization schemes. Here the authors present results on purely thermal metalorganic chemical vapor deposition (CVD) of Ti-Si-N. At temperatures between 300 and 450 C, tetrakis(diethylamido)titanium (TDEAT), silane, and ammonia react to grow Ti-Si-N films with Si contents of 0--20 at.%. Typical impurity contents are 5--10 at.%H and 0.5 to 1.5 at.% C, with no O or other impurities detected in the bulk of the film. Although the film resistivity increases with increasing Si content, it remains below 1,000 {micro}{Omega}-cm for films with less than 5 at.% Si. These films are promising candidates for advanced diffusion barriers.

  18. The response of the ionosphere to the injection of chemically reactive vapors

    NASA Technical Reports Server (NTRS)

    Bernhardt, P. A.

    1976-01-01

    As a gas released in the ionosphere expands, it is rapidly cooled. When the vapor becomes sufficiently tenuous, it is reheated by collisions with the ambient atmosphere and its flow is then governed by diffusive expansion. As the injected gas becomes well mixed with the plasma, a hole is created by chemical processes. In the case of diatomic hydrogen release, depression of the electron concentrations is governed by the charge exchange reaction between oxygen ions and hydrogen, producing positive hydroxyl ions. Hydroxyl ions rapidly react with the electron gas to produce excited oxygen and hydrogen atoms. Enhanced airglow emissions result from the transition of the excited atoms to lower energy states. The electron temperature in the depleted region rises sharply causing a thermal expansion of the plasma and a further reduction in the local plasma concentration.

  19. Relatively low temperature synthesis of graphene by radio frequency plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Qi, J. L.; Zheng, W. T.; Zheng, X. H.; Wang, X.; Tian, H. W.

    2011-05-01

    We present a simple, low-cost and high-effective method for synthesizing high-quality, large-area graphene using radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) on SiO 2/Si substrate covered with Ni thin film at relatively low temperatures (650 °C). During deposition, the trace amount of carbon (CH 4 gas flow rate of 2 sccm) is introduced into PECVD chamber and the deposition time is only 30 s, in which the carbon atoms diffuse into the Ni film and then segregate on its surface, forming single-layer or few-layer graphene. After deposition, Ni is removed by wet etching, and the obtained single continuous graphene film can easily be transferred to other substrates. This investigation provides a large-area, low temperature and low-cost synthesis method for graphene as a practical electronic material.

  20. Uniformity of large-area bilayer graphene grown by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Sheng, Yuewen; Rong, Youmin; He, Zhengyu; Fan, Ye; Warner, Jamie H.

    2015-10-01

    Graphene grown by chemical vapor deposition (CVD) on copper foils is a viable method for large area films for transparent conducting electrode (TCE) applications. We examine the spatial uniformity of large area films on the centimeter scale when transferred onto both Si substrates with 300 nm oxide and flexible transparent polyethylene terephthalate substrates. A difference in the quality of graphene, as measured by the sheet resistance and transparency, is found for the areas at the edges of large sheets that depends on the supporting boat used for the CVD growth. Bilayer graphene is grown with uniform properties on the centimeter scale when a flat support is used for CVD growth. The flat support provides consistent delivery of precursor to the copper catalyst for graphene growth. These results provide important insights into the upscaling of CVD methods for growing high quality graphene and its transfer onto flexible substrates for potential applications as a TCE.

  1. Uniformity of large-area bilayer graphene grown by chemical vapor deposition.

    PubMed

    Sheng, Yuewen; Rong, Youmin; He, Zhengyu; Fan, Ye; Warner, Jamie H

    2015-10-01

    Graphene grown by chemical vapor deposition (CVD) on copper foils is a viable method for large area films for transparent conducting electrode (TCE) applications. We examine the spatial uniformity of large area films on the centimeter scale when transferred onto both Si substrates with 300 nm oxide and flexible transparent polyethylene terephthalate substrates. A difference in the quality of graphene, as measured by the sheet resistance and transparency, is found for the areas at the edges of large sheets that depends on the supporting boat used for the CVD growth. Bilayer graphene is grown with uniform properties on the centimeter scale when a flat support is used for CVD growth. The flat support provides consistent delivery of precursor to the copper catalyst for graphene growth. These results provide important insights into the upscaling of CVD methods for growing high quality graphene and its transfer onto flexible substrates for potential applications as a TCE. PMID:26349521

  2. Development of polishing methods for Chemical Vapor Deposited Silicon Carbide mirrors for synchrotron radiation

    SciTech Connect

    Fuchs, B.A.; Brown, N.J.

    1987-01-01

    Material properties of Chemical Vapor Deposited Silicon Carbide (CVD SiC) make it ideal for use in mirrors for synchrotron radiation experiments. We developed methods to grind and polish flat samples of CVD SiC down to measured surface roughness values as low as 1.1 Angstroms rms. We describe the processing details, including observations we made during trial runs with alternative processing recipes. We conclude that pitch polishing using progressively finer diamond abrasive, augmented with specific water based lubricants and additives, produces superior results. Using methods based on these results, a cylindrical and a toroidal mirror, each about 100 x 300mm, were respectively finished by Continental Optical and Frank Cooke, Incorporated. WYCO Interferometry shows these mirrors have surface roughness less than 5.7 Angstroms rms. These mirrors have been installed on the LLNL/UC X-ray Calibration and Standards Facility at the Stanford Synthrotron Radiation Laboratory.

  3. Nanoscale arrays of antimony telluride single crystals by selective chemical vapor deposition.

    PubMed

    Huang, Ruomeng; Benjamin, Sophie L; Gurnani, Chitra; Wang, Yudong; Hector, Andrew L; Levason, William; Reid, Gillian; De Groot, C H Kees

    2016-01-01

    Arrays of individual single nanocrystals of Sb2Te3 have been formed using selective chemical vapor deposition (CVD) from a single source precursor. Crystals are self-assembled reproducibly in confined spaces of 100 nm diameter with pitch down to 500 nm. The distribution of crystallite sizes across the arrays is very narrow (standard deviation of 15%) and is affected by both the hole diameter and the array pitch. The preferred growth of the crystals in the <1 1 0> orientation along the diagonal of the square holes strongly indicates that the diffusion of adatoms results in a near thermodynamic equilibrium growth mechanism of the nuclei. A clear relationship between electrical resistivity and selectivity is established across a range of metal selenides and tellurides, showing that conductive materials result in more selective growth and suggesting that electron donation is of critical importance for selective deposition. PMID:27283116

  4. Large single crystals of graphene on melted copper using chemical vapor deposition.

    PubMed

    Wu, Yimin A; Fan, Ye; Speller, Susannah; Creeth, Graham L; Sadowski, Jerzy T; He, Kuang; Robertson, Alex W; Allen, Christopher S; Warner, Jamie H

    2012-06-26

    A simple method is presented for synthesizing large single crystal graphene domains on melted copper using atmospheric pressure chemical vapor deposition (CVD). This is achieved by performing the reaction above the melting point of copper (1090 °C) and using a molybdenum or tungsten support to prevent balling of the copper from dewetting. By controlling the amount of hydrogen during growth, individual single crystal domains of monolayer graphene greater than 200 μm are produced within a continuous film. Stopping growth before a complete film is formed reveals individual hexagonal domains of graphene that are epitaxially aligned in their orientation. Angular resolved photoemission spectroscopy is used to show that the graphene grown on copper exhibits a linear dispersion relationship and no sign of doping. HRTEM and electron diffraction reveal a uniform high quality crystalline atomic structure of monolayer graphene.

  5. Study of surface morphology and alignment of MWCNTs grown by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Shukrullah, S.; Mohamed, N. M.; Shaharun, M. S.; Yasar, M.

    2014-10-01

    In this research work, Multiwalled Carbon Nanotubes (MWCNTs) have been synthesized successfully by using floating catalytic chemical vapor deposition (FCCVD) method. Different ferrocene amounts (0.1, 0.125 and 0.15 g) were used as catalyst and ethylene was used as a carbon precursor at reaction temperature of 800°C. Characterization of the grown MWCNTs was carried out by using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The obtained data showed that the catalyst weight affects the nanotubes diameter, alignment, crystallinity and growth significantly, whereas negligible influence was noticed on CNTs forest length. The dense, uniform and meadow like patterns of grown CNTs were observed for 0.15 g ferrocene. The average diameter of the grown CNTs was found in the range of 32 to 75 nm. Close inspection of the TEM images also confirmed the defects in some of the grown CNTs, where few black spots were evident in CNTs structure.

  6. Study of surface morphology and alignment of MWCNTs grown by chemical vapor deposition

    SciTech Connect

    Shukrullah, S. E-mail: noranimuti-mohamed@petronas.com.my Mohamed, N. M. E-mail: noranimuti-mohamed@petronas.com.my Shaharun, M. S. E-mail: noranimuti-mohamed@petronas.com.my; Yasar, M.

    2014-10-24

    In this research work, Multiwalled Carbon Nanotubes (MWCNTs) have been synthesized successfully by using floating catalytic chemical vapor deposition (FCCVD) method. Different ferrocene amounts (0.1, 0.125 and 0.15 g) were used as catalyst and ethylene was used as a carbon precursor at reaction temperature of 800°C. Characterization of the grown MWCNTs was carried out by using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The obtained data showed that the catalyst weight affects the nanotubes diameter, alignment, crystallinity and growth significantly, whereas negligible influence was noticed on CNTs forest length. The dense, uniform and meadow like patterns of grown CNTs were observed for 0.15 g ferrocene. The average diameter of the grown CNTs was found in the range of 32 to 75 nm. Close inspection of the TEM images also confirmed the defects in some of the grown CNTs, where few black spots were evident in CNTs structure.

  7. Growth of well-oriented VACNTs using thermal chemical vapor deposition method

    NASA Astrophysics Data System (ADS)

    Yousefi, Amin Termeh; Mahmood, Mohamad Rusop; Ikeda, Shoichiro

    2016-07-01

    The remarkable properties of carbon nanotubes (CNTs) make them attractive for biosensor applications, especially for medical detecting devices. In this paper, we describe a process to grow high oriented ratio CNT arrays to improve the electrical properties of the devices based on CNTs. Chemical vapor deposition (CVD) was used to grow highly oriented CNT using camphor as the carbon source, and argon and hydrogen as carrier gases to grow perpendicular CNTs on the surface of the silicon substrate in presence of ferrocene as a metallic catalyst. Images were revealed by FESEM indicates that the formation mechanism of oriented CNTs with high morphological purity nanotubes, which is depends significantly on deposition time and applied temperature to the furnaces. This method might be an effective method to produce oriented MWCNT in different length.

  8. Helicon wave plasma chemical vapor deposition of nanocrystalline silicon carbide films at low substrate temperature

    NASA Astrophysics Data System (ADS)

    Yu, Wei; Lu, Wanbing; Wang, Baozhu; Han, Li; Fu, Guangsheng

    2005-02-01

    Silicon carbide thin films have been deposited by helicon wave plasma enhanced chemical vapor deposition (HW-PECVD) technique under the conditions of variant deposition temperatures from 300 to 600°C. Silane, methane and hydrogen are used as reactive gas. The structural properties of the deposited films are characterized using Fourier transform infrared (FTIR), scan electron microscopy (SEM), transmission electron microscopy (TEM) and ultraviolet-visible optical absorption techniques. Detailed analysis of the FTIR spectra indicates that the onset of growing nanocrystalline SiC films at low substrate temperature is closed related with the high plasma ionization rate of helicon wave plasma and the condition of low working gas pressure and strong hydrogen dilution in experiment. The SEM and TEM measurements confirm that the structure of the deposited films is nanocrystalline SiC grains embedded in amorphous matrix and the size of the crystalline gains increases with substrate temperature.

  9. Ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Grill, A.; Patel, V.

    2001-08-01

    Carbon-doped oxide materials (SiCOH films) with ultralow dielectric constants have been prepared by plasma-enhanced chemical vapor deposition (PECVD) from mixtures of SiCOH precursors with organic materials. The films have been characterized by Rutherford backscattering and forward recoil elastic scattering analysis, Fourier transform infrared spectroscopy and index of refraction measurements, and measurement of step heights in the films. The electrical properties of the films have been measured on metal-insulator-silicon structures. By proper choice of the precursor and deposition conditions, the dielectric constants of the SiCOH films can be reduced to values below 2.1, demonstrating the extendibility of PECVD-prepared carbon-doped oxides as the interconnect dielectrics for future generation of very large scale integrated chips.

  10. Controlling nucleation of monolayer WSe2 during metal-organic chemical vapor deposition growth

    NASA Astrophysics Data System (ADS)

    Eichfeld, Sarah M.; Oliveros Colon, Víctor; Nie, Yifan; Cho, Kyeongjae; Robinson, Joshua A.

    2016-06-01

    Tungsten diselenide (WSe2) is a semiconducting, two-dimensional (2D) material that has gained interest in the device community recently due to its electronic properties. The synthesis of atomically thin WSe2, however, is still in its infancy. In this work we elucidate the requirements for large selenium/tungsten precursor ratios and explain the effect of nucleation temperature on the synthesis of WSe2 via metal-organic chemical vapor deposition (MOCVD). The introduction of a nucleation-step prior to growth demonstrates that increasing nucleation temperature leads to a transition from a Volmer–Weber to Frank–van der Merwe growth mode. Additionally, the nucleation step prior to growth leads to an improvement of WSe2 layer coverage on the substrate. Finally, we note that the development of this two-step technique may allow for improved control and quality of 2D layers grown via CVD and MOCVD processes.

  11. Growth of GaN micro/nanolaser arrays by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Liu, Haitao; Zhang, Hanlu; Dong, Lin; Zhang, Yingjiu; Pan, Caofeng

    2016-09-01

    Optically pumped ultraviolet lasing at room temperature based on GaN microwire arrays with Fabry–Perot cavities is demonstrated. GaN microwires have been grown perpendicularly on c-GaN/sapphire substrates through simple catalyst-free chemical vapor deposition. The GaN microwires are [0001] oriented single-crystal structures with hexagonal cross sections, each with a diameter of ∼1 μm and a length of ∼15 μm. A possible growth mechanism of the vertical GaN microwire arrays is proposed. Furthermore, we report room-temperature lasing in optically pumped GaN microwire arrays based on the Fabry–Perot cavity. Photoluminescence spectra exhibit lasing typically at 372 nm with an excitation threshold of 410 kW cm‑2. The result indicates that these aligned GaN microwire arrays may offer promising prospects for ultraviolet-emitting micro/nanodevices.

  12. One-step synthesis of chlorinated graphene by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Fan, Liwei; Zhang, Hui; Zhang, Pingping; Sun, Xuhui

    2015-08-01

    We developed an approach to synthesize the chlorinated single layer graphene (Cl-G) by one-step plasma enhanced chemical vapor deposition. Copper foil was simply treated with hydrochloric acid and then CuCl2 formed on the surface was used as Cl source under the assistance of plasma treatment. Compared with other two-step methods by post plasma/photochemical treatment of CVD-grown single layer graphene (SLG), one-step Cl-G synthesis approach is quite straightforward and effective. X-ray photoelectron spectroscopy (XPS) revealed that ∼2.45 atom% Cl remained in SLG. Compared with the pristine SLG, the obvious blue shifts of G band and 2D band along with the appearance of D' band and D + G band in the Raman spectra indicate p-type doping of Cl-G.

  13. Vertical graphene nanosheets synthesized by thermal chemical vapor deposition and the field emission properties

    NASA Astrophysics Data System (ADS)

    Guo, Xin; Qin, Shengchun; Bai, Shuai; Yue, Hongwei; Li, Yali; Chen, Qiang; Li, Junshuai; He, Deyan

    2016-09-01

    In this paper, we explored synthesis of vertical graphene nanosheets (VGNs) by thermal chemical vapor deposition (CVD). Through optimizing the experimental condition, growth of well aligned VGNs with uniform morphologies on nickel-coated stainless steel (SS) was realized for the first time by thermal CVD. In the meantime, influence of growth parameters on the VGN morphology was understood based on the balancing between the concentration and kinetic energy of carbon-containing radicals. Structural characterizations demonstrate that the achieved VGNs are normally composed of several graphene layers and less corrugated compared to the ones synthesized by other approaches, e.g. plasma enhanced (PE) CVD. The field emission measurement indicates that the VGNs exhibit relatively stable field emission and a field enhancement factor of about 1470, which is comparable to the values of VGNs prepared by PECVD can be achieved.

  14. Growth of GaN micro/nanolaser arrays by chemical vapor deposition.

    PubMed

    Liu, Haitao; Zhang, Hanlu; Dong, Lin; Zhang, Yingjiu; Pan, Caofeng

    2016-09-01

    Optically pumped ultraviolet lasing at room temperature based on GaN microwire arrays with Fabry-Perot cavities is demonstrated. GaN microwires have been grown perpendicularly on c-GaN/sapphire substrates through simple catalyst-free chemical vapor deposition. The GaN microwires are [0001] oriented single-crystal structures with hexagonal cross sections, each with a diameter of ∼1 μm and a length of ∼15 μm. A possible growth mechanism of the vertical GaN microwire arrays is proposed. Furthermore, we report room-temperature lasing in optically pumped GaN microwire arrays based on the Fabry-Perot cavity. Photoluminescence spectra exhibit lasing typically at 372 nm with an excitation threshold of 410 kW cm(-2). The result indicates that these aligned GaN microwire arrays may offer promising prospects for ultraviolet-emitting micro/nanodevices.

  15. Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Nouhi, Akbar (Inventor); Stirn, Richard J. (Inventor)

    1990-01-01

    A method for preparation of a dilute magnetic semiconductor (DMS) film is provided, wherein a Group II metal source, a Group VI metal source and a transition metal magnetic ion source are pyrolyzed in the reactor of a metalorganic chemical vapor deposition (MOCVD) system by contact with a heated substrate. As an example, the preparation of films of Cd.sub.1-x Mn.sub.x Te, wherein 0.ltoreq..times..ltoreq.0.7, on suitable substrates (e.g., GaAs) is described. As a source of manganese, tricarbonyl (methylcyclopentadienyl) maganese (TCPMn) is employed. To prevent TCPMn condensation during the introduction thereof int the reactor, the gas lines, valves and reactor tubes are heated. A thin-film solar cell of n-i-p structure, wherein the i-type layer comprises a DMS, is also described; the i-type layer is suitably prepared by MOCVD.

  16. Development of a polysilicon process based on chemical vapor deposition (phase 1)

    NASA Technical Reports Server (NTRS)

    Mccormick, J.; Arvidson, A.; Sawyer, D.; Plahutnik, F.

    1981-01-01

    A dichlorosilane-based reductive chemical vapor deposition (CVD) process demonstrated is capable of producing, at low cost, high quality polycrystalline silicon. Testing of decomposition reactor heat shields to insure that the shield provides adequate personnel protection assuming a worst case explosion was completed. Minor modifications to a production reactor heat shield provided adequate heat shield integrity. Construction of the redesigned PDU (Process Development Unit) to accommodate all safety related information proceeded on schedule. Structural steel work was completed as is the piping and instrumentation design work. Major pieces of process equipment were received and positioned in the support structure and all transfer piping and conduits to the PDU were installed. Construction was completed on a feed system for supplying DCS to an intermediate sized reactor. The feed system was successfully interfaced with a reactor equipped with a modified heat shield. Reactor checkout was completed.

  17. Development of a polysilicon process based on chemical vapor deposition, phase 1

    NASA Technical Reports Server (NTRS)

    Mccormick, J.; Sharp, K.; Arvidson, A.; Sawyer, D.

    1981-01-01

    The development of a dichlorosilane-based reductive chemical vapor deposition process for the production of polycrystalline silicon is discussed. Experimental data indicate that the ease of ignition and explosion severity of dichlorosilane (DCS)/air mixtures is substantially attenuated if the DCS is diluted with hydrogen. Redesign of the process development unit to accommodate safety related information is described. Several different sources of trichlorosilane were used to generate a mixture of redistributed chlorosilanes via Dowex ion exchange resin. The unseparated mixtures were then fed to an experimental reactor in which silicon was deposited and the deposited silicon analyzed for electrically active impurities. At least one trichlorosilane source provided material of requisite purity. Silicon grown in the experimental reactor was converted to single crystal material and solar cells fabricated and tested.

  18. Environmental effects on the tensile strength of chemically vapor deposited silicon carbide fibers

    NASA Technical Reports Server (NTRS)

    Bhatt, R. T.; Kraitchman, M. D.

    1985-01-01

    The room temperature and elevated temperature tensile strengths of commercially available chemically vapor-deposited (CVD) silicon carbide fibers were measured after 15 min heat treatment to 1600 C in various environments. These environments included oxygen, air, argon and nitrogen at one atmosphere and vacuum at 10/9 atmosphere. Two types of fibers were examined which differed in the SiC content of their carbon-rich coatings. Threshold temperature for fiber strength degradation was observed to be dependent on the as-received fiber-flaw structure, on the environment and on the coating. Fractographic analyses and flexural strength measurements indicate that tensile strength losses were caused by surface degradation. Oxidation of the surface coating is suggested as one possible degradation mechanism. The SiC fibers containing the higher percentage of SiC near the surface of the carbon-rich coating show better strength retention and higher elevated temperature strength.

  19. Life cycle cost study for coated conductor manufacture by metal organic chemical vapor deposition

    SciTech Connect

    Chapman, J.N.

    1999-07-13

    The purpose of this report is to calculate the cost of producing high temperature superconducting wire by the Metal Organic Chemical Vapor Deposition (MOCVD) process. The technology status is reviewed from the literature and a plant conceptual design is assumed for the cost calculation. The critical issues discussed are the high cost of the metal organic precursors, the material utilization efficiency and the capability of the final product as measured by the critical current density achieved. Capital, operating and material costs are estimated and summed as the basis for calculating the cost per unit length of wire. Sensitivity analyses of key assumptions are examined to determine their effects on the final wire cost. Additionally, the cost of wire on the basis of cost per kiloampere per meter is calculated for operation at lower temperatures than the liquid nitrogen boiling temperature. It is concluded that this process should not be ruled out on the basis of high cost of precursors alone.

  20. Preparation of γ-Al2O3 films by laser chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Gao, Ming; Ito, Akihiko; Goto, Takashi

    2015-06-01

    γ- and α-Al2O3 films were prepared by chemical vapor deposition using CO2, Nd:YAG, and InGaAs lasers to investigate the effects of varying the laser wavelength and deposition conditions on the phase composition and microstructure. The CO2 laser was found to mostly produce α-Al2O3 films, whereas the Nd:YAG and InGaAs lasers produced γ-Al2O3 films when used at a high total pressure. γ-Al2O3 films had a cauliflower-like structure, while the α-Al2O3 films had a dense and columnar structure. Of the three lasers, it was the Nd:YAG laser that interacted most with intermediate gas species. This promoted γ-Al2O3 nucleation in the gas phase at high total pressure, which explains the cauliflower-like structure of nanoparticles observed.

  1. Spiral growth of few-layer MoS2 by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Dong, X.; Yan, C.; Tomer, D.; Li, C. H.; Li, L.

    2016-08-01

    Growth spirals exhibit appealing properties due to a preferred layer stacking and lack of inversion symmetry. Here, we report spiral growth of MoS2 during chemical vapor deposition on SiO2/Si and epitaxial graphene/SiC substrates, and their physical and electronic properties. We determine the layer-dependence of the MoS2 bandgap, ranging from 2.4 eV for the monolayer to a constant of 1.3 eV beyond the fifth layer. We further observe that spirals predominantly initiate at the step edges of the SiC substrate, based on which we propose a growth mechanism driven by screw dislocation created by the coalescence of two growth fronts at steps.

  2. Diamond synthesis at atmospheric pressure by microwave capillary plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Hemawan, Kadek W.; Gou, Huiyang; Hemley, Russell J.

    2015-11-01

    Polycrystalline diamond has been synthesized on silicon substrates at atmospheric pressure, using a microwave capillary plasma chemical vapor deposition technique. The CH4/Ar plasma was generated inside of quartz capillary tubes using 2.45 GHz microwave excitation without adding H2 into the deposition gas chemistry. Electronically excited species of CN, C2, Ar, N2, CH, Hβ, and Hα were observed in the emission spectra. Raman measurements of deposited material indicate the formation of well-crystallized diamond, as evidenced by the sharp T2g phonon at 1333 cm-1 peak relative to the Raman features of graphitic carbon. Field emission scanning electron microscopy images reveal that, depending on the growth conditions, the carbon microstructures of grown films exhibit "coral" and "cauliflower-like" morphologies or well-facetted diamond crystals with grain sizes ranging from 100 nm to 10 μm.

  3. Template assisted synthesis of photocatalytic titanium dioxide nanotubes by hot filament chemical vapor deposition method

    NASA Astrophysics Data System (ADS)

    Karaman, Mustafa; Sarıipek, Fatma; Köysüren, Özcan; Yıldız, H. Bekir

    2013-10-01

    Titanium dioxide thin films were deposited conformally over electrospun polymethyl methacrylate (PMMA) fibers by hot filament chemical vapor deposition method. Deposition rates were observed to be very high to allow for rapid coatings. Thermal annealing of as deposited materials leads the clean decomposition of the polymeric inner layer and formation of randomly distributed anatase TiO2 nanotubes. Nanotubular TiO2 structure was clearly identified by SEM and that structure is ideal for good photocatalytic activity because of its high surface area per unit volume ratio. FTIR and XPS results show the formation of stoichiometric TiO2, and the crystalline form of the final nanotubes was found to be anatase (1 0 1) after XRD analysis. High photocatalytic activity of TiO2 nanotubes under UV irradiation was observed with an apparent rate constant of 0.74 h-1 for methyl orange decomposition.

  4. Thin films of barium fluoride scintillator deposited by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Kirlin, P. S.; Binder, R.; Winn, D. R.; O'Hare, J.; LaPierre, C.; Whitmore, M.

    1990-04-01

    We have used metal-organic chemical vapor deposition (MOCVD) technology to coat optical substrates with thin (˜1-10 μm thick) films of inorganic BaF 2 scintillator. Scanning electron microscope (SEM) photographs indicate that high-quality epitaxial crystalline film growth was achieved, with surface defects typically smaller than optical wavelengths. The scintillation light created by the deposition of ionizing radiation in the scintillating films was measured with a photomultiplier and shown to be similar to bulk melt-grown crystals. The results demonstrate the potential of these composite optical materials for planar and fiber scintillation radiation detectors in high energy and nuclear physics, synchrotron radiation research, and in radiation and X-ray imaging and monitoring.

  5. Structural and electronic characterization of graphene grown by chemical vapor deposition and transferred onto sapphire

    NASA Astrophysics Data System (ADS)

    Joucken, Frédéric; Colomer, Jean-François; Sporken, Robert; Reckinger, Nicolas

    2016-08-01

    We present a combination of magnetotransport and local probe measurements on graphene grown by chemical vapor deposition on copper foil and subsequently transferred onto a sapphire substrate. A rather strong p-doping is observed (∼9 × 1012 cm-2) together with quite low carrier mobility (∼1350 cm2/V s). Atomic force and tunneling imaging performed on the transport devices reveals the presence of contaminants between sapphire and graphene, explaining the limited performance of our devices. The transferred graphene displays ridges similar to those observed whilst graphene is still on the copper foil. We show that, on sapphire, these ridges are made of different thicknesses of the contamination layer and that, contrary to what was reported for hBN or certain transition metal dichalcogenides, no self-cleansing process of the sapphire substrate is observed.

  6. Growth of MoS2 Layers by Two-Step Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Sheu, An-Di

    Monolayer molybdenum disulfide (MoS2), a two-dimensional (2D) crystal with a direct bandgap, is a promising candidate for nano electronic devices, energy storage, and photocatalysts. People are researching for large-area single-layer MoS2 growth. In my work, I investigated the growth of monolayer MoS2 on SiO2/Si substrate by chemical vapor deposition (CVD). Using sulfur and molybdenum trioxide (MoO3) as precursors to grow 2D MoS2 in the tube furnace CVD system. As part of my thesis, I carried out several growth experiments while varying the deposition parameters. The as-grown samples are characterized using optical, scanning electron, and atomic force microscopes and Raman spectroscopy. I have also developed a two-step approach to grow MoS2 layers. This new approach has great potential to grow large-area single-layer MoS2.

  7. Carbon impurities on graphene synthesized by chemical vapor deposition on platinum

    SciTech Connect

    Ping, Jinglei; Fuhrer, Michael S.

    2014-07-28

    We report nanocrystalline carbon impurities coexisting with graphene synthesized via chemical vapor deposition on platinum. For certain growth conditions, we observe micron-size island-like impurity layers which can be mistaken for second graphene layers in optical microscopy or scanning electron microscopy. The island orientation depends on the crystalline orientation of the Pt, as shown by electron backscatter diffraction, indicating growth of carbon at the platinum surface below graphene. Dark-field transmission electron microscopy indicates that in addition to uniform single-crystal graphene, our sample is decorated with nanocrystalline carbon impurities with a spatially inhomogeneous distribution. The impurity concentration can be reduced significantly by lowering the growth temperature. Raman spectra show a large D peak, however, electrical characterization shows high mobility (∼8000 cm{sup 2}/Vs), indicating a limitation for Raman spectroscopy in characterizing the electronic quality of graphene.

  8. Growth inhibition to enhance conformal coverage in thin film chemical vapor deposition.

    PubMed

    Kumar, Navneet; Yanguas-Gil, Angel; Daly, Scott R; Girolami, Gregory S; Abelson, John R

    2008-12-31

    We introduce the use of a growth inhibitor to enhance thin film conformality in low temperature chemical vapor deposition. Films of TiB(2) grown from the single source precursor Ti(BH(4))(3)(dme) are much more highly conformal when grown in the presence of one of the film growth byproducts, 1,2-dimethoxyethane (dme). This effect can be explained in terms of two alternative inhibitory mechanisms: one involving blocking of surface reactive sites, which is equivalent to reducing the rate of the forward reaction leading to film growth, the other analogous to Le Chatelier's principle, in which the addition of a reaction product increases the rate of the back reaction. The reduction in growth rate corresponds to a reduction in the sticking probability of the precursor, which enhances conformality by enabling the precursor to diffuse deeper into a recessed feature before it reacts. PMID:19067582

  9. Multi-layer graphene on Co(0001) by ethanol chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Kazi, H.; Cao, Y.; Tanabe, I.; Driver, M. S.; Dowben, P. A.; Kelber, J. A.

    2014-09-01

    N layer (1 ⩽ N ⩽ 10) monolayer films of graphene were formed by the chemical vapor deposition of ethanol on either clean or oxidized Co(0001) substrates at 1000 K, with no evidence of either interfacial oxide formation or graphene/substrate charge transfer. Low energy electron diffraction data indicate that the graphene layers or domains are azimuthally rotated, but otherwise show the characteristics of graphene with a Raman spectra D/G intensity ratio of 0.25 or less, and a C 1s binding energy of 284.5 eV with an observable π → π* transition. Magneto optic Kerr effect spectra indicate only the ferromagnetic hysteresis with high remanence, with no evidence of Co/graphene exchange bias. This is very different from the negligible remanent magnetization of graphene/Co3O4/Co trilayer structures.

  10. Characterization of nanocarbon deposited on insulator substrate by alcohol chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Tsujimoto, Marina; Murata, Hidenobu; Tachibana, Masaru

    2016-10-01

    Single-layer-graphene-like nanocarbon materials were directly deposited on c-plane sapphire substrates by thermal chemical vapor deposition with ethanol as a carbon source. Scanning electron microscopy (SEM) images show that the deposited materials have sheetlike grains of around 100 nm diameter. Most of them have “hills” with 32 nm diameter on the grains. According to atomic force microscopy (AFM) observation, the height of the sheetlike grains is below 1 nm, which is comparable to that of single-layer graphene, while the hills have a height of several nm. Raman spectra show that the material is similar to graphitic nanocarbon, which has a strong D band. This result implies that there are a number of defects in the nanocarbon materials.

  11. Controlling nucleation of monolayer WSe2 during metal-organic chemical vapor deposition growth

    NASA Astrophysics Data System (ADS)

    Eichfeld, Sarah M.; Oliveros Colon, Víctor; Nie, Yifan; Cho, Kyeongjae; Robinson, Joshua A.

    2016-06-01

    Tungsten diselenide (WSe2) is a semiconducting, two-dimensional (2D) material that has gained interest in the device community recently due to its electronic properties. The synthesis of atomically thin WSe2, however, is still in its infancy. In this work we elucidate the requirements for large selenium/tungsten precursor ratios and explain the effect of nucleation temperature on the synthesis of WSe2 via metal-organic chemical vapor deposition (MOCVD). The introduction of a nucleation-step prior to growth demonstrates that increasing nucleation temperature leads to a transition from a Volmer-Weber to Frank-van der Merwe growth mode. Additionally, the nucleation step prior to growth leads to an improvement of WSe2 layer coverage on the substrate. Finally, we note that the development of this two-step technique may allow for improved control and quality of 2D layers grown via CVD and MOCVD processes.

  12. Growth of GaN micro/nanolaser arrays by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Liu, Haitao; Zhang, Hanlu; Dong, Lin; Zhang, Yingjiu; Pan, Caofeng

    2016-09-01

    Optically pumped ultraviolet lasing at room temperature based on GaN microwire arrays with Fabry-Perot cavities is demonstrated. GaN microwires have been grown perpendicularly on c-GaN/sapphire substrates through simple catalyst-free chemical vapor deposition. The GaN microwires are [0001] oriented single-crystal structures with hexagonal cross sections, each with a diameter of ˜1 μm and a length of ˜15 μm. A possible growth mechanism of the vertical GaN microwire arrays is proposed. Furthermore, we report room-temperature lasing in optically pumped GaN microwire arrays based on the Fabry-Perot cavity. Photoluminescence spectra exhibit lasing typically at 372 nm with an excitation threshold of 410 kW cm-2. The result indicates that these aligned GaN microwire arrays may offer promising prospects for ultraviolet-emitting micro/nanodevices.

  13. Improved carrier mobility of chemical vapor deposition-graphene by counter-doping with hydrazine hydrate

    SciTech Connect

    Chen, Zhiying; Zhang, Yanhui; Zhang, Haoran; Sui, Yanping; Zhang, Yaqian; Ge, Xiaoming; Yu, Guanghui Xie, Xiaoming; Li, Xiaoliang; Jin, Zhi; Liu, Xinyu

    2015-03-02

    We developed a counter-doping method to tune the electronic properties of chemical vapor deposition (CVD)-grown graphene by varying the concentration and time of graphene exposure to hydrazine hydrate (N{sub 2}H{sub 4}·H{sub 2}O). The shift of G and 2D peaks of Raman spectroscopy is analyzed as a function of N{sub 2}H{sub 4}·H{sub 2}O concentration. The result revealed that N{sub 2}H{sub 4}·H{sub 2}O realized n-type doping on CVD grown graphene. X-ray photoelectron spectroscopy measurement proved the existence of nitrogen, which indicated the adsorption of N{sub 2}H{sub 4} on the surface of graphene. After counter-doping, carrier mobility, which was measured by Hall measurements, increased three fold.

  14. Atmospheric Pressure Chemical Vapor Deposition of Graphene Using a Liquid Benzene Precursor.

    PubMed

    Kang, Cheong; Jung, Da Hee; Lee, Jin Seok

    2015-11-01

    Graphene has attracted great attention owing to its unique structural and electrical properties. Among various synthetic approaches of the graphene, metal assisted chemical vapor deposition (CVD) is the most reasonable and proper method to produce large-scale and low-defect graphene films. Until now, CVD from gaseous hydrocarbon sources has shown great promises for large-scale graphene growth, but high growth temperature is required for such growth. A recent work by using liquid benzene precursor has shown that monolayer graphene could be obtained at 300 degrees C by low pressure, required for high vacuum equipment. Here, we report the first successful attempt of atmospheric pressure CVD graphene growth on Cu foil using liquid benzene as a precursor. We investigated the effect of hydrogen partial pressure, growth time, and precursor temperature on the domain size of as-grown graphene. Also, micro-Raman analysis confirmed that these reaction parameters influenced the number of layer and uniformity of the graphene.

  15. Reducing flicker noise in chemical vapor deposition graphene field-effect transistors

    NASA Astrophysics Data System (ADS)

    Arnold, Heather N.; Sangwan, Vinod K.; Schmucker, Scott W.; Cress, Cory D.; Luck, Kyle A.; Friedman, Adam L.; Robinson, Jeremy T.; Marks, Tobin J.; Hersam, Mark C.

    2016-02-01

    Single-layer graphene derived from chemical vapor deposition (CVD) holds promise for scalable radio frequency (RF) electronic applications. However, prevalent low-frequency flicker noise (1/f noise) in CVD graphene field-effect transistors is often up-converted to higher frequencies, thus limiting RF device performance. Here, we achieve an order of magnitude reduction in 1/f noise in field-effect transistors based on CVD graphene transferred onto silicon oxide substrates by utilizing a processing protocol that avoids aqueous chemistry after graphene transfer. Correspondingly, the normalized noise spectral density (10-7-10-8 μm2 Hz-1) and noise amplitude (4 × 10-8-10-7) in these devices are comparable to those of exfoliated and suspended graphene. We attribute the reduction in 1/f noise to a decrease in the contribution of fluctuations in the scattering cross-sections of carriers arising from dynamic redistribution of interfacial disorder.

  16. Effects of postdeposition treatments on the mechanical properties of a chemical-vapor-deposited silicon carbide

    SciTech Connect

    Wang, H.; Singh, R.N.; Goela, J.S.

    1995-09-01

    The influence of different postdeposition treatments such as water quench and thermal heating in air, nitrogen, and vacuum on mechanical properties of chemical-vapor-deposited (CVD) silicon carbide was investigated. The results showed that these postdeposition treatments increased the flexural strength by as much as 60% but did not significantly change other properties such as hardness and fracture toughness. The strength increase was achieved by treatments performed in both the oxidizing and nonoxidizing environments. Compressive residual stresses in CVD SiC increased because of these treatments, but this increase was not large enough to explain fully the observed increase in the flexural strength. It is proposed that these thermal treatments led to strength increase via healing of surface machining flaws. Thermal treatments in nonoxidizing environments reduced or blunted the flaws through the rearrangement of atoms and restoration of damaged crystal structure in SiC, while in oxidizing environments, passive oxidation may have served as an additional flaw healing mechanism.

  17. High Current Emission from Patterned Aligned Carbon Nanotubes Fabricated by Plasma-Enhanced Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Cui, Linfan; Chen, Jiangtao; Yang, Bingjun; Jiao, Tifeng

    2015-12-01

    Vertically, carbon nanotube (CNT) arrays were successfully fabricated on hexagon patterned Si substrates through radio frequency plasma-enhanced chemical vapor deposition using gas mixtures of acetylene (C2H2) and hydrogen (H2) with Fe/Al2O3 catalysts. The CNTs were found to be graphitized with multi-walled structures. Different H2/C2H2 gas flow rate ratio was used to investigate the effect on CNT growth, and the field emission properties were optimized. The CNT emitters exhibited excellent field emission performance (the turn-on and threshold fields were 2.1 and 2.4 V/μm, respectively). The largest emission current could reach 70 mA/cm2. The emission current was stable, and no obvious deterioration was observed during the long-term stability test of 50 h. The results were relevant for practical applications based on CNTs.

  18. High Current Emission from Patterned Aligned Carbon Nanotubes Fabricated by Plasma-Enhanced Chemical Vapor Deposition.

    PubMed

    Cui, Linfan; Chen, Jiangtao; Yang, Bingjun; Jiao, Tifeng

    2015-12-01

    Vertically, carbon nanotube (CNT) arrays were successfully fabricated on hexagon patterned Si substrates through radio frequency plasma-enhanced chemical vapor deposition using gas mixtures of acetylene (C2H2) and hydrogen (H2) with Fe/Al2O3 catalysts. The CNTs were found to be graphitized with multi-walled structures. Different H2/C2H2 gas flow rate ratio was used to investigate the effect on CNT growth, and the field emission properties were optimized. The CNT emitters exhibited excellent field emission performance (the turn-on and threshold fields were 2.1 and 2.4 V/μm, respectively). The largest emission current could reach 70 mA/cm(2). The emission current was stable, and no obvious deterioration was observed during the long-term stability test of 50 h. The results were relevant for practical applications based on CNTs. PMID:26666912

  19. Boron nitride nanowires synthesis via a simple chemical vapor deposition at 1200 °C

    SciTech Connect

    Ahmad, Pervaiz; Khandaker, Mayeen Uddin; Amin, Yusoff Mohd; Khan, Ziaul Raza

    2015-04-24

    A very simple chemical vapor deposition technique is used to synthesize high quality boron nitride nanowires at 1200 °C within a short growth duration of 30 min. FESEM micrograph shows that the as-synthesized boron nitride nanowires have a clear wire like morphology with diameter in the range of ∼20 to 150 nm. HR-TEM confirmed the wire-like structure of boron nitride nanowires, whereas XPS and Raman spectroscopy are used to find out the elemental composition and phase of the synthesized material. The synthesized boron nitride nanowires have potential applications as a sensing element in solid state neutron detector, neutron capture therapy and microelectronic devices with uniform electronic properties.

  20. Carbon nanowalls grown by microwave plasma enhanced chemical vapor deposition during the carbonization of polyacrylonitrile fibers

    NASA Astrophysics Data System (ADS)

    Li, Jiangling; Su, Shi; Zhou, Lei; Kundrát, Vojtěch; Abbot, Andrew M.; Mushtaq, Fajer; Ouyang, Defang; James, David; Roberts, Darren; Ye, Haitao

    2013-01-01

    We used microwave plasma enhanced chemical vapor deposition (MPECVD) to carbonize an electrospun polyacrylonitrile (PAN) precursor to form carbon fibers. Scanning electron microscopy, Raman spectroscopy, and Fourier transform infrared spectroscopy were used to characterize the fibers at different evolution stages. It was found that MPECVD-carbonized PAN fibers do not exhibit any significant change in the fiber diameter, whilst conventionally carbonized PAN fibers show a 33% reduction in the fiber diameter. An additional coating of carbon nanowalls (CNWs) was formed on the surface of the carbonized PAN fibers during the MPECVD process without the assistance of any metallic catalysts. The result presented here may have a potential to develop a novel, economical, and straightforward approach towards the mass production of carbon fibrous materials containing CNWs.

  1. In situ nitrogen-doped graphene grown from polydimethylsiloxane by plasma enhanced chemical vapor deposition

    SciTech Connect

    Wang, Chundong; Zhou, Yungang; He, Lifang; Ng, Tsz-Wai; Hong, Guo; Wu, Qi-Hui; Gao, Fei; Lee, Chun-Sing; Zhang, Wenjun

    2013-01-21

    Due to its unique electronic properties and wide spectrum of promising applications, graphene has attracted much attention from scientists in various fields. Control and engineering of graphene’s semiconducting properties is considered to be the key of its applications in electronic devices. Here, we report a novel method to prepare in situ nitrogen-doped graphene by microwave plasma assisted chemical vapor deposition (CVD) using PDMS (Polydimethylsiloxane) as a solid carbon source. Based on this approach, the concentration of nitrogen-doping can be easily controlled via the flow rate of nitrogen during the CVD process. X-ray photoelectron spectroscopy results indicated that the nitrogen atoms doped into graphene lattice were mainly in the forms of pyridinic and pyrrolic structures. Moreover, first-principles calculations show that the incorporated nitrogen atoms can lead to p-type doping of graphene. This in situ approach provides a promising strategy to prepare graphene with controlled electronic properties.

  2. Capillary - Discharge Based Hand-Held Detector For Chemical Vapor Monitoring

    DOEpatents

    Duan, Yixiang

    2005-05-31

    A handheld/portable detector for chemical vapor monitoring includes a housing and a discharge chamber that is established therein. The plasma discharge has a relatively small volume, e.g., in the micro-liter range. A first electrode and a second electrode are disposed within the discharge chamber and a discharge gap is established therebetween. A sample gas tube is in fluid communication with the discharge chamber and provides a sample gas to the discharge chamber. Also, a plasma gas tube is in fluid communication with the discharge chamber and provides a plasma gas thereto. Accordingly, the plasma gas can be used to maintain microplasma discharge between the electrodes and the sample gas can be introduced into the microplasma discharge. A spectrometer optically connected to the handheld/portable detector is used to measure the radiation emitted by the sample gas when subjected to the microplasma discharge.

  3. Carbon nanowalls grown by microwave plasma enhanced chemical vapor deposition during the carbonization of polyacrylonitrile fibers

    SciTech Connect

    Li Jiangling; Su Shi; Kundrat, Vojtech; Abbot, Andrew M.; Ye, Haitao; Zhou Lei; Mushtaq, Fajer; Ouyang Defang; James, David; Roberts, Darren

    2013-01-14

    We used microwave plasma enhanced chemical vapor deposition (MPECVD) to carbonize an electrospun polyacrylonitrile (PAN) precursor to form carbon fibers. Scanning electron microscopy, Raman spectroscopy, and Fourier transform infrared spectroscopy were used to characterize the fibers at different evolution stages. It was found that MPECVD-carbonized PAN fibers do not exhibit any significant change in the fiber diameter, whilst conventionally carbonized PAN fibers show a 33% reduction in the fiber diameter. An additional coating of carbon nanowalls (CNWs) was formed on the surface of the carbonized PAN fibers during the MPECVD process without the assistance of any metallic catalysts. The result presented here may have a potential to develop a novel, economical, and straightforward approach towards the mass production of carbon fibrous materials containing CNWs.

  4. Synchrotron radiation x-ray beam profile monitor using chemical vapor deposition diamond film

    SciTech Connect

    Kudo, Togo; Takahashi, Sunao; Nariyama, Nobuteru; Hirono, Toko; Tachibana, Takeshi; Kitamura, Hideo

    2006-12-15

    Photoluminescence (PL) of a Si-doped polycrystalline diamond film fabricated using the chemical vapor deposition technique was employed to measure the profile of a synchrotron radiation pink x-ray beam emitted from an in-vacuum hybrid undulator at the SPring-8 facility. The spectrum of the section of the diamond film penetrated by the emitted visible red light exhibited a peak at 739 nm and a wideband structure extending from 550 to 700 nm. The PL intensity increased with the absorbed dose of the incident beam in the diamond within a dynamic range of 10{sup 3}. A two-dimensional distribution of the PL intensity revealed the undulator beam profile.

  5. Silicon Chemical Vapor Deposition on macro and submicron powders in a fluidized bed

    SciTech Connect

    Cadoret, L.; Reuge, N; Pannala, Sreekanth; Syamlal, M; Rossignol, C; Dexpert-Ghys, J; Coufort, C; Caussat, B

    2009-01-01

    Titanium oxide (TiO2) submicron powders have been treated by Chemical Vapor Deposition (CVD) in a vibro-fluidized bed in order to deposit silicon layers of nanometer scale on each individual grain from silane (SiH4). Experimental results show that for the conditions tested, the original granular structure of the powders is preserved for 90% of the initial bed weight while the remaining 10% consisted of agglomerates in millimetre range found near the distributor of the reactor. A comparison between experimental and modelling results using the MFIX code shows that for Geldart's Group B alumina particles (Al2O3), the model represents both the bed hydrodynamics and silane conversion rates quite well. The future objective is to extend the simulation capability to cohesive submicron powders in order to achieve better predictability of the phenomena governing ultrafine particles.

  6. Selective charge doping of chemical vapor deposition-grown graphene by interface modification

    SciTech Connect

    Wang, Shengnan Suzuki, Satoru; Furukawa, Kazuaki; Orofeo, Carlo M.; Takamura, Makoto; Hibino, Hiroki

    2013-12-16

    The doping and scattering effect of substrate on the electronic properties of chemical vapor deposition (CVD)-grown graphene are revealed. Wet etching the underlying SiO{sub 2} of graphene and depositing self-assembled monolayers (SAMs) of organosilane between graphene and SiO{sub 2} are used to modify various substrates for CVD graphene transistors. Comparing with the bare SiO{sub 2} substrate, the carrier mobility of CVD graphene on modified substrate is enhanced by almost 5-fold; consistently the residual carrier concentration is reduced down to 10{sup 11} cm{sup −2}. Moreover, scalable and reliable p- and n-type graphene and graphene p-n junction are achieved on various silane SAMs with different functional groups.

  7. Time Dependent DD Neutrons Measurement Using a Single Crystal Chemical Vapor Deposition Diamond Detector on EAST

    NASA Astrophysics Data System (ADS)

    Du, Tengfei; Peng, Xingyu; Chen, Zhongjing; Hu, Zhimeng; Ge, Lijian; Hu, Liqun; Zhong, Guoqiang; Pu, Neng; Chen, Jinxiang; Fan, Tieshuan

    2016-09-01

    A single crystal chemical vapor deposition (scCVD) diamond detector has been successfully employed for neutron measurements in the EAST (Experimental Advanced Superconducting Tokamak) plasmas. The scCVD diamond detector coated with a 5 μm 6LiF (95% 6Li enriched) layer was placed inside a polyethylene moderator to enhance the detection efficiency. The time-dependent neutron emission from deuteron plasmas during neutral beam injection (NBI) heating was obtained. The measured results are compared with that of fission chamber detectors, which always act as standard neutron flux monitors. The scCVD diamond detector exhibits good reliability, stability and the capability to withstand harsh radiation environments despite its low detection efficiency due to the small active volume. supported by the National Magnetic Confinement Fusion Science Program of China (Nos. 2013GB106004 and 2012GB101003) and National Natural Science Foundation of China (No. 91226102)

  8. Nanoscale arrays of antimony telluride single crystals by selective chemical vapor deposition

    PubMed Central

    Huang, Ruomeng; Benjamin, Sophie L.; Gurnani, Chitra; Wang, Yudong; Hector, Andrew L.; Levason, William; Reid, Gillian; De Groot, C. H. (Kees)

    2016-01-01

    Arrays of individual single nanocrystals of Sb2Te3 have been formed using selective chemical vapor deposition (CVD) from a single source precursor. Crystals are self-assembled reproducibly in confined spaces of 100 nm diameter with pitch down to 500 nm. The distribution of crystallite sizes across the arrays is very narrow (standard deviation of 15%) and is affected by both the hole diameter and the array pitch. The preferred growth of the crystals in the <1 1 0> orientation along the diagonal of the square holes strongly indicates that the diffusion of adatoms results in a near thermodynamic equilibrium growth mechanism of the nuclei. A clear relationship between electrical resistivity and selectivity is established across a range of metal selenides and tellurides, showing that conductive materials result in more selective growth and suggesting that electron donation is of critical importance for selective deposition. PMID:27283116

  9. Direct Growth Properties of Graphene Layers on Sapphire Substrate by Alcohol-Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Nakamura, Atsushi; Miyasaka, Yuta; Temmyo, Jiro

    2012-04-01

    Few nanometers thick graphene layers were directly grown on a-plane (11bar 20) sapphire substrates by alcohol-chemical vapor deposition (alcohol-CVD) using ethanol as a carbon source and without any catalytic metal on the substrate surface. The growth relationship between the graphene layer and substrate was analyzed using a transmission electron microscope (TEM). The growth rate of graphene layers with different growth temperatures revealed that the Al atom act as a catalyst for synthesizing a graphitic material during the decomposition of ethanol. An optical transmittance and a sheet resistance of the graphene sheet directly grown on sapphire substrate were observed. SiO2/Si and n-6H-SiC substrates were also examined for graphene direct growth to discuss the catalytic behavior of Si atoms compared with Al atoms.

  10. Effect of cooling condition on chemical vapor deposition synthesis of graphene on copper catalyst.

    PubMed

    Choi, Dong Soo; Kim, Keun Soo; Kim, Hyeongkeun; Kim, Yena; Kim, TaeYoung; Rhy, Se-hyun; Yang, Cheol-Min; Yoon, Dae Ho; Yang, Woo Seok

    2014-11-26

    Here, we show that chemical vapor deposition growth of graphene on copper foil is strongly affected by the cooling conditions. Variation of cooling conditions such as cooling rate and hydrocarbon concentration in the cooling step has yielded graphene islands with different sizes, density of nuclei, and growth rates. The nucleation site density on Cu substrate is greatly reduced when the fast cooling condition was applied, while continuing methane flow during the cooling step also influences the nucleation and growth rate. Raman spectra indicate that the graphene synthesized under fast cooling condition and methane flow on cool-down exhibit superior quality of graphene. Further studies suggest that careful control of the cooling rate and CH4 gas flow on the cooling step yield a high quality of graphene. PMID:25386721

  11. Nanosoldering carbon nanotube junctions by local chemical vapor deposition for improved device performance.

    PubMed

    Do, Jae-Won; Estrada, David; Xie, Xu; Chang, Noel N; Mallek, Justin; Girolami, Gregory S; Rogers, John A; Pop, Eric; Lyding, Joseph W

    2013-01-01

    The performance of carbon nanotube network (CNN) devices is usually limited by the high resistance of individual nanotube junctions (NJs). We present a novel method to reduce this resistance through a nanoscale chemical vapor deposition (CVD) process. By passing current through the devices in the presence of a gaseous CVD precursor, localized nanoscale Joule heating induced at the NJs stimulates the selective and self-limiting deposition of metallic nanosolder. The effectiveness of this nanosoldering process depends on the work function of the deposited metal (here Pd or HfB2), and it can improve the on/off current ratio of a CNN device by nearly an order of magnitude. This nanosoldering technique could also be applied to other device types where nanoscale resistance components limit overall device performance. PMID:24215439

  12. Growth of FePt encapsulated carbon nanotubes by thermal chemical vapor deposition

    SciTech Connect

    Fujiwara, Yuji Kaneko, Tetsuya; Hori, Kenta; Takase, Sho; Sato, Hideki; Maeda, Kohji; Kobayashi, Tadashi; Kato, Takeshi; Iwata, Satoshi; Jimbo, Mutsuko

    2014-03-15

    FePt encapsulated carbon nanotubes (CNTs) were grown by thermal chemical vapor deposition using an Fe/Pt bilayer catalyst. The CNTs were grown according to the base growth model. Selected area electron diffraction results revealed that the encapsulated particles were A1-FePt, L1{sub 0}-FePt, and Fe{sub 3}PtC. The crystal structures of particles found at the root parts of CNTs were not able to be identified, however. The layered structure of catalytic films seemed to be responsible for the difference in Pt content between particles found at tip and root parts of CNTs. Approximately 60% of CNTs grown at 800 °C had particles at their tip parts, compared to only 30% when the growth temperature was 700 °C, indicating that higher process temperatures promote particle encapsulation in CNTs.

  13. Modification of tubular ceramic membranes with carbon nanotubes using catalytic chemical vapor deposition.

    PubMed

    Tran, Duc Trung; Thieffry, Guillemette; Jacob, Matthieu; Batiot-Dupeyrat, Catherine; Teychene, Benoit

    2015-01-01

    In this study, carbon nanotubes (CNTs) were successfully grown on tubular ceramic membranes using the catalytic chemical vapor deposition (CCVD) method. CNTs were synthesized at 650°C for 3-6 h under a 120 mL min(-1) flow of C2H6 on ceramic membranes impregnated with iron salt. The synthesis procedure was beforehand optimized in terms of catalyst amount, impregnation duration and reaction temperature, using small pieces of tubular ceramic membranes. The yield, size and structure of the CNTs produced were characterized using thermogravimetric analysis and microscopic imaging techniques. Afterwards, preliminary filtration tests with alginate and phenol were performed on two modified tubular membranes. The results indicate that the addition of CNTs on the membrane material increased the permeability of ceramic membrane and its ability to reject alginate and adsorb phenol, yet decreased its fouling resistance. PMID:26465312

  14. Optimization of the chemical vapor deposition process for fabrication of carbon nanotube/Al composite powders

    SciTech Connect

    He, C.N.; Zhao, N.Q.; Shi, C.S.; Song, S.Z.

    2010-09-15

    In order to optimize the chemical vapor deposition process for fabrication of carbon nanotube/Al composite powders, the effect of different reaction conditions (such as reaction temperature, reaction time, and reaction gas ratio) on the morphological and structural development of the powder and dispersion of CNTs in Al powder was investigated using transmission electron microscope. The results showed that low temperatures (500-550 {sup o}C) give rise to herringbone-type carbon nanofibers and high temperatures (600-630 {sup o}C) lead to multi-walled CNTs. Long reaction times broaden the CNT size distribution and increase the CNT yield. Appropriate nitrogen flow is preferred for CNT growth, but high and low nitrogen flow result in carbon nanospheres and CNTs with coarse surfaces, respectively. Above results show that appropriate parameters are effective in dispersing the nanotubes in the Al powder which simultaneously protects the nanotubes from damage.

  15. Growth of aligned carbon nanotubes on carbon microfibers by dc plasma-enhanced chemical vapor deposition

    SciTech Connect

    Chen, L H.; AuBuchon, J F.; Chen, I C.; Daraio, C; Ye, X R.; Gapin, A; Jin, Sungho; Wang, Chong M.

    2006-01-16

    It is shown that unidirectionally aligned carbon nanotubes can be grown on electrically conductive network of carbon microfibers via control of buffer layer material and applied electric field during dc plasma chemical vapor deposition growth. Ni catalyst deposition on carbon microfiber produces relatively poorly aligned nanotubes with significantly varying diameters and lengths obtained. The insertion of Ti 5 nm thick underlayer between Ni catalyst layer and C microfiber substrate significantly alters the morphology of nanotubes, resulting in much better aligned, finer diameter, and longer array of nanotubes. This beneficial effect is attributed to the reduced reaction between Ni and carbon paper, as well as prevention of plasma etching of carbon paper by inserting a Ti buffer layer. Such a unidirectionally aligned nanotube structure on an open-pore conductive substrate structure may conveniently be utilized as a high-surface-area base electrodes for fuel cells, batteries, and other electrochemical and catalytic reactions.

  16. Direct Chemical Vapor Deposition-Derived Graphene Glasses Targeting Wide Ranged Applications.

    PubMed

    Sun, Jingyu; Chen, Yubin; Priydarshi, Manish Kr; Chen, Zhang; Bachmatiuk, Alicja; Zou, Zhiyu; Chen, Zhaolong; Song, Xiuju; Gao, Yanfeng; Rümmeli, Mark H; Zhang, Yanfeng; Liu, Zhongfan

    2015-09-01

    Direct growth of graphene on traditional glasses is of great importance for various daily life applications. We report herein the catalyst-free atmospheric-pressure chemical vapor deposition approach to directly synthesizing large-area, uniform graphene films on solid glasses. The optical transparency and sheet resistance of such kinds of graphene glasses can be readily adjusted together with the experimentally tunable layer thickness of graphene. More significantly, these graphene glasses find a broad range of real applications by enabling the low-cost construction of heating devices, transparent electrodes, photocatalytic plates, and smart windows. With a practical scalability, the present work will stimulate various applications of transparent, electrically and thermally conductive graphene glasses in real-life scenarios. PMID:26305883

  17. Plasma-enhanced chemical vapor deposition of amorphous Si on graphene

    NASA Astrophysics Data System (ADS)

    Lupina, G.; Strobel, C.; Dabrowski, J.; Lippert, G.; Kitzmann, J.; Krause, H. M.; Wenger, Ch.; Lukosius, M.; Wolff, A.; Albert, M.; Bartha, J. W.

    2016-05-01

    Plasma-enhanced chemical vapor deposition of thin a-Si:H layers on transferred large area graphene is investigated. Radio frequency (RF, 13.56 MHz) and very high frequency (VHF, 140 MHz) plasma processes are compared. Both methods provide conformal coating of graphene with Si layers as thin as 20 nm without any additional seed layer. The RF plasma process results in amorphization of the graphene layer. In contrast, the VHF process keeps the high crystalline quality of the graphene layer almost intact. Correlation analysis of Raman 2D and G band positions indicates that Si deposition induces reduction of the initial doping in graphene and an increase of compressive strain. Upon rapid thermal annealing, the amorphous Si layer undergoes dehydrogenation and transformation into a polycrystalline film, whereby a high crystalline quality of graphene is preserved.

  18. Direct Chemical Vapor Deposition-Derived Graphene Glasses Targeting Wide Ranged Applications.

    PubMed

    Sun, Jingyu; Chen, Yubin; Priydarshi, Manish Kr; Chen, Zhang; Bachmatiuk, Alicja; Zou, Zhiyu; Chen, Zhaolong; Song, Xiuju; Gao, Yanfeng; Rümmeli, Mark H; Zhang, Yanfeng; Liu, Zhongfan

    2015-09-01

    Direct growth of graphene on traditional glasses is of great importance for various daily life applications. We report herein the catalyst-free atmospheric-pressure chemical vapor deposition approach to directly synthesizing large-area, uniform graphene films on solid glasses. The optical transparency and sheet resistance of such kinds of graphene glasses can be readily adjusted together with the experimentally tunable layer thickness of graphene. More significantly, these graphene glasses find a broad range of real applications by enabling the low-cost construction of heating devices, transparent electrodes, photocatalytic plates, and smart windows. With a practical scalability, the present work will stimulate various applications of transparent, electrically and thermally conductive graphene glasses in real-life scenarios.

  19. Prediction of aqueous solubility, vapor pressure and critical micelle concentration for aquatic partitioning of perfluorinated chemicals.

    PubMed

    Bhhatarai, Barun; Gramatica, Paola

    2011-10-01

    The majority of perfluorinated chemicals (PFCs) are of increasing risk to biota and environment due to their physicochemical stability, wide transport in the environment and difficulty in biodegradation. It is necessary to identify and prioritize these harmful PFCs and to characterize their physicochemical properties that govern the solubility, distribution and fate of these chemicals in an aquatic ecosystem. Therefore, available experimental data (10-35 compounds) of three important properties: aqueous solubility (AqS), vapor pressure (VP) and critical micelle concentration (CMC) on per- and polyfluorinated compounds were collected for quantitative structure-property relationship (QSPR) modeling. Simple and robust models based on theoretical molecular descriptors were developed and externally validated for predictivity. Model predictions on selected PFCs were compared with available experimental data and other published in silico predictions. The structural applicability domains (AD) of the models were verified on a bigger data set of 221 compounds. The predicted properties of the chemicals that are within the AD, are reliable, and they help to reduce the wide data gap that exists. Moreover, the predictions of AqS, VP, and CMC of most common PFCs were evaluated to understand the aquatic partitioning and to derive a relation with the available experimental data of bioconcentration factor (BCF).

  20. Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition

    SciTech Connect

    Mantovan, R. Vangelista, S.; Wiemer, C.; Lamperti, A.; Tallarida, G.; Chikoidze, E.; Dumont, Y.; Fanciulli, M.

    2014-05-07

    R-Fe-O (R = rare earth) compounds have recently attracted high interest as potential new multiferroic materials. Here, we report a method based on the solid-state reaction between Er{sub 2}O{sub 3} and Fe layers, respectively grown by atomic layer deposition and chemical vapor deposition, to synthesize Er-Fe-O thin films. The reaction is induced by thermal annealing and evolution of the formed phases is followed by in situ grazing incidence X-ray diffraction. Dominant ErFeO{sub 3} and ErFe{sub 2}O{sub 4} phases develop following subsequent thermal annealing processes at 850 °C in air and N{sub 2}. Structural, chemical, and morphological characterization of the layers are conducted through X-ray diffraction and reflectivity, time-of-flight secondary ion-mass spectrometry, and atomic force microscopy. Magnetic properties are evaluated by magnetic force microscopy, conversion electron Mössbauer spectroscopy, and vibrating sample magnetometer, being consistent with the presence of the phases identified by X-ray diffraction. Our results constitute a first step toward the use of cost-effective chemical methods for the synthesis of this class of multiferroic thin films.

  1. Development of a new laser heating system for thin film growth by chemical vapor deposition.

    PubMed

    Fujimoto, Eiji; Sumiya, Masatomo; Ohnishi, Tsuyoshi; Lippmaa, Mikk; Takeguchi, Masaki; Koinuma, Hideomi; Matsumoto, Yuji

    2012-09-01

    We have developed a new laser heating system for thin film growth by chemical vapor deposition (CVD). A collimated beam from a high-power continuous-wave 808 nm semiconductor laser was directly introduced into a CVD growth chamber without an optical fiber. The light path of the heating laser inside the chamber was isolated mechanically from the growth area by bellows to protect the optics from film coating. Three types of heat absorbers, (10 × 10 × 2 mm(3)) consisting of SiC, Ni/NiO(x), or pyrolytic graphite covered with pyrolytic BN (PG/PBN), located at the backside of the substrate, were tested for heating performance. It was confirmed that the substrate temperature could reach higher than 1500 °C in vacuum when a PG/PBN absorber was used. A wide-range temperature response between 400 °C and 1000 °C was achieved at high heating and cooling rates. Although the thermal energy loss increased in a H(2) gas ambient due to the higher thermal conductivity, temperatures up to 1000 °C were achieved even in 200 Torr H(2). We have demonstrated the capabilities of this laser heating system by growing ZnO films by metalorganic chemical vapor deposition. The growth mode of ZnO films was changed from columnar to lateral growth by repeated temperature modulation in this laser heating system, and consequently atomically smooth epitaxial ZnO films were successfully grown on an a-plane sapphire substrate.

  2. Development of aerosol assisted chemical vapor deposition for thin film fabrication

    NASA Astrophysics Data System (ADS)

    Maulana, Dwindra Wilham; Marthatika, Dian; Panatarani, Camellia; Mindara, Jajat Yuda; Joni, I. Made

    2016-02-01

    Chemical vapor deposition (CVD) is widely used to grow a thin film applied in many industrial applications. This paper report the development of an aerosol assisted chemical vapor deposition (AACVD) which is one of the CVD methods. Newly developed AACVD system consists of a chamber of pyrex glass, two wire-heating elements placed to cover pyrex glass, a substrate holder, and an aerosol generator using an air brush sprayer. The temperature control system was developed to prevent condensation on the chamber walls. The control performances such as the overshoot and settling time were obtained from of the developed temperature controller. Wire-heating elements were controlled at certain setting value to heat the injected aerosol to form a thin film in the substrate. The performance of as-developed AACVD system tested to form a thin film where aerosol was sprayed into the chamber with a flow rate of 7 liters/minutes, and vary in temperatures and concentrations of precursor. The temperature control system have an overshoot around 25 °C from the desired set point temperature, very small temperature ripple 2 °C and a settling time of 20 minutes. As-developed AACVD successfully fabricated a ZnO thin film with thickness of below 1 µm. The performances of system on formation of thin films influenced by the generally controlled process such as values of setting temperature and concentration where the aerosol flow rate was fixed. Higher temperature was applied, the more uniform ZnO thin films were produced. In addition, temperature of the substrate also affected on surface roughness of the obtained films, while concentration of ZnO precursor determined the thickness of produce films. It is concluded that newly simple AACVD can be applied to produce a thin film.

  3. Comprehensive investigation of HgCdTe metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Raupp, Gregory B.

    1993-01-01

    The principal objective of this experimental and theoretical research program was to explore the possibility of depositing high quality epitaxial CdTe and HgCdTe at very low pressures through metalorganic chemical vapor deposition (MOCVD). We explored two important aspects of this potential process: (1) the interaction of molecular flow transport and deposition in an MOCVD reactor with a commercial configuration, and (2) the kinetics of metal alkyl source gas adsorption, decomposition and desorption from the growing film surface using ultra high vacuum surface science reaction techniques. To explore the transport-reaction issue, we have developed a reaction engineering analysis of a multiple wafer-in-tube ultrahigh vacuum chemical vapor deposition (UHV/CVD) reactor which allows an estimate of wafer or substrate throughput for a reactor of fixed geometry and a given deposition chemistry with specified film thickness uniformity constraints. The model employs a description of ballistic transport and reaction based on the pseudo-steady approximation to the Boltzmann equation in the limit of pure molecular flow. The model representation takes the form of an integral equation for the flux of each reactant or intermediate species to the wafer surfaces. Expressions for the reactive sticking coefficients (RSC) for each species must be incorporated in the term which represents reemission from a wafer surface. The interactions of MOCVD precursors with Si and CdTe were investigated using temperature programmed desorption (TPD) in ultra high vacuum combined with Auger electron spectroscopy (AES). These studies revealed that diethyltellurium (DETe) and dimethylcadmium (DMCd) adsorb weakly on clean Si(100) and desorb upon heating without decomposing. These precursors adsorb both weakly and strongly on CdTe(111)A, with DMCd exhibiting the stronger interaction with the surface than DETe.

  4. Dynamics of chemical vapor sensing with MoS2 using 1T/2H phase contacts/channel

    NASA Astrophysics Data System (ADS)

    Friedman, Adam L.; Perkins, F. Keith; Hanbicki, Aubrey T.; Culbertson, James C.; Campbell, Paul M.

    2016-06-01

    Ultra-thin transition metal dichalcogenides (TMDs) films show remarkable potential for use in chemical vapor sensing devices. Electronic devices fabricated from TMD films are inexpensive, inherently flexible, low-power, amenable to industrial-scale processing because of emergent growth techniques, and have shown high sensitivity and selectivity to electron donor analyte molecules important for explosives and nerve gas detection. However, for devices reported to date, the conductance response to chemical vapors is dominated by Schottky contacts, to the detriment of the sensitivity, selectivity, recovery, and obscuring their intrinsic behavior. Here, we use contact engineering to transition the contacts in a MoS2 FET-based chemical vapor sensor to the 1T conducting phase, while leaving the channel in the 2H semiconducting state, and thus providing Ohmic contacts to the film. We demonstrate that the resultant sensors have much improved electrical characteristics, are more selective, and recover fully after chemical vapor exposure--all major enhancements to previously MoS2 sensor devices. We identify labile nitrogen-containing electron donors as the primary species that generate a response in MoS2, and we study the dynamics of the sensing reactions, identifying two possible qualitative models for the chemical sensing reaction.

  5. Dynamics of chemical vapor sensing with MoS2 using 1T/2H phase contacts/channel.

    PubMed

    Friedman, Adam L; Perkins, F Keith; Hanbicki, Aubrey T; Culbertson, James C; Campbell, Paul M

    2016-06-01

    Ultra-thin transition metal dichalcogenides (TMDs) films show remarkable potential for use in chemical vapor sensing devices. Electronic devices fabricated from TMD films are inexpensive, inherently flexible, low-power, amenable to industrial-scale processing because of emergent growth techniques, and have shown high sensitivity and selectivity to electron donor analyte molecules important for explosives and nerve gas detection. However, for devices reported to date, the conductance response to chemical vapors is dominated by Schottky contacts, to the detriment of the sensitivity, selectivity, recovery, and obscuring their intrinsic behavior. Here, we use contact engineering to transition the contacts in a MoS2 FET-based chemical vapor sensor to the 1T conducting phase, while leaving the channel in the 2H semiconducting state, and thus providing Ohmic contacts to the film. We demonstrate that the resultant sensors have much improved electrical characteristics, are more selective, and recover fully after chemical vapor exposure-all major enhancements to previously MoS2 sensor devices. We identify labile nitrogen-containing electron donors as the primary species that generate a response in MoS2, and we study the dynamics of the sensing reactions, identifying two possible qualitative models for the chemical sensing reaction. PMID:27194452

  6. Effect of precursor supply on structural and morphological characteristics of fe nanomaterials synthesized via chemical vapor condensation method.

    PubMed

    Ha, Jong-Keun; Ahn, Hyo-Jun; Kim, Ki-Won; Nam, Tae-Hyun; Cho, Kwon-Koo

    2012-01-01

    Various physical, chemical and mechanical methods, such as inert gas condensation, chemical vapor condensation, sol-gel, pulsed wire evaporation, evaporation technique, and mechanical alloying, have been used to synthesize nanoparticles. Among them, chemical vapor condensation (CVC) has the benefit of its applicability to almost all materials because a wide range of precursors are available for large-scale production with a non-agglomerated state. In this work, Fe nanoparticles and nanowires were synthesized by chemical vapor condensation method using iron pentacarbonyl (Fe(CO)5) as the precursor. The effect of processing parameters on the microstructure, size and morphology of Fe nanoparticles and nanowires were studied. In particular, we investigated close correlation of size and morphology of Fe nanoparticles and nanowires with atomic quantity of inflow precursor into the electric furnace as the quantitative analysis. The atomic quantity was calculated by Boyle's ideal gas law. The Fe nanoparticles and nanowires with various diameter and morphology have successfully been synthesized by the chemical vapor condensation method. PMID:22524015

  7. Chemical vapor deposition of silicon, silicon dioxide, titanium and ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Chen, Feng

    Various silicon-based thin films (such as epitaxial, polycrystalline and amorphous silicon thin films, silicon dioxide thin films and silicon nitride thin films), titanium thin film and various ferroelectric thin films (such as BaTiO3 and PbTiO3 thin films) play critical roles in the manufacture of microelectronics circuits. For the past few years, there have been tremendous interests to search for cheap, safe and easy-to-use methods to develop those thin films with high quality and good step coverage. Silane is a critical chemical reagent widely used to deposit silicon-based thin films. Despite its wide use, silane is a dangerous material. It is pyrophoric, extremely flammable and may explode from heat, shock and/or friction. Because of the nature of silane, serious safety issues have been raised concerning the use, transportation, and storage of compressed gas cylinders of silane. Therefore it is desired to develop safer ways to deposit silicon-based films. In chapter III, I present the results of our research in the following fields: (1) Silane generator, (2) Substitutes of silane for deposition of silicon and silicon dioxide thin films, (3) Substitutes of silane for silicon dioxide thin film deposition. In chapter IV, hydropyridine is introduced as a new ligand for use in constructing precursors for chemical vapor deposition. Detachement of hydropyridine occurs by a low-temperature reaction leaving hydrogen in place of the hydropyridine ligands. Hydropyridine ligands can be attached to a variety of elements, including main group metals, such as aluminum and antimony, transition metals, such as titanium and tantalum, semiconductors such as silicon, and non-metals such as phosphorus and arsenic. In this study, hydropyridine-containing titanium compounds were synthesized and used as chemical vapor deposition precursors for deposition of titanium containing thin films. Some other titanium compounds were also studied for comparison. In chapter V, Chemical Vapor

  8. Cytotoxicity of Boron-Doped Nanocrystalline Diamond Films Prepared by Microwave Plasma Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Liu, Dan; Gou, Li; Ran, Junguo; Zhu, Hong; Zhang, Xiang

    2015-07-01

    Boron-doped nanocrystalline diamond (NCD) exhibits extraordinary mechanical properties and chemical stability, making it highly suitable for biomedical applications. For implant materials, the impact of boron-doped NCD films on the character of cell growth (i.e., adhesion, proliferation) is very important. Boron-doped NCD films with resistivity of 10-2 Ω·cm were grown on Si substrates by the microwave plasma chemical vapor deposition (MPCVD) process with H2 bubbled B2O3. The crystal structure, diamond character, surface morphology, and surface roughness of the boron-doped NCD films were analyzed using different characterization methods, such as X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The contact potential difference and possible boron distribution within the film were studied with a scanning kelvin force microscope (SKFM). The cytotoxicity of films was studied by in vitro tests, including fluorescence microscopy, SEM and MTT assay. Results indicated that the surface roughness value of NCD films was 56.6 nm and boron was probably accumulated at the boundaries between diamond agglomerates. MG-63 cells adhered well and exhibited a significant growth on the surface of films, suggesting that the boron-doped NCD films were non-toxic to cells. supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (University of Electronic Science and Technology of China) (No. KFJJ201313)

  9. Growth and properties of W-B-N diffusion barriers deposited by chemical vapor deposition

    SciTech Connect

    Fleming, J.G.; Roherty-Osmun, E.; Custer, J.; Smith, P.M.; Reid, J.S.; Nicolet, M.A.

    1995-10-01

    The authors have used chemical vapor deposition to grow ternary tungsten-based diffusion barriers to determine if they exhibit properties similar to those of sputter-deposited ternaries. A range of different W-B-N compositions in a band of compositions roughly between 20 and 40% W were produced. The deposition temperature was low, 350 C, and the precursors used are well accepted by the industry. Deposition rates are high for a diffusion barrier application. Resistivities range from 200 to 20,000 {micro}{Omega}-cm, the films with the best barrier properties having {approximately}1,000 {micro}{Omega}-cm resistivities. Adhesion to oxides is sufficient to allow these films to be used as the adhesion layer in a tungsten chemical mechanical polishing plug application. The films are x-ray amorphous as-deposited and have crystallization temperatures of up to 900 C. Barrier performance against Cu has been tested using diode test structures. A composition of W{sub .23}B{sub .49}N{sub .28} was able to prevent diode failure up to a 700 C, 30 minute anneal. These materials, deposited by CVD, display properties similar to those deposited by physical deposition techniques.

  10. The density factor in the synthesis of carbon nanotube forest by injection chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Call, R. W.; Read, C. G.; Mart, C.; Shen, T.-C.

    2012-12-01

    Beneath the seeming straight-forwardness of growing carbon nanotube (CNT) forests by the injection chemical vapor deposition (CVD) method, control of the forest morphology on various substrates is yet to be achieved. Using ferrocene dissolved in xylene as the precursor, we demonstrate that the concentration of ferrocene and the injection rate of the precursor dictate the CNT density of these forests. However, CNT density will also be affected by the substrates and the growth temperature which determine the diffusion of the catalyst adatoms. The CNT growth rate is controlled by the temperature and chemical composition of the gases in the CVD reactor. We show that the final height of the forest is diffusion limited, at least in the conditions of our experiments. Because of the proximity and entanglement of the CNTs in a forest, the growing CNTs can lift-up the inactive CNTs resulting in reduced density toward the base of the forest unless the nucleation rate of the new catalyst particles is sufficiently high to replenish the inactive catalyst particles. Significant loss of CNT attachment by the lift-up effect reduces the adhesion of the forest to the substrate. Optimizing the ferrocene concentration in the precursor, precursor injection rate, gas mixture, substrate, and temperature is necessary to achieve desired forest morphology for specific applications.

  11. Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition.

    PubMed

    Ma, Teng; Ren, Wencai; Zhang, Xiuyun; Liu, Zhibo; Gao, Yang; Yin, Li-Chang; Ma, Xiu-Liang; Ding, Feng; Cheng, Hui-Ming

    2013-12-17

    The controlled growth of large-area, high-quality, single-crystal graphene is highly desired for applications in electronics and optoelectronics; however, the production of this material remains challenging because the atomistic mechanism that governs graphene growth is not well understood. The edges of graphene, which are the sites at which carbon accumulates in the two-dimensional honeycomb lattice, influence many properties, including the electronic properties and chemical reactivity of graphene, and they are expected to significantly influence its growth. We demonstrate the growth of single-crystal graphene domains with controlled edges that range from zigzag to armchair orientations via growth-etching-regrowth in a chemical vapor deposition process. We have observed that both the growth and the etching rates of a single-crystal graphene domain increase linearly with the slanted angle of its edges from 0° to ∼19° and that the rates for an armchair edge are faster than those for a zigzag edge. Such edge-structure-dependent growth/etching kinetics of graphene can be well explained at the atomic level based on the concentrations of the kinks on various edges and allow the evolution and control of the edge and morphology in single-crystal graphene following the classical kinetic Wulff construction theory. Using these findings, we propose several strategies for the fabrication of wafer-sized, high-quality, single-crystal graphene.

  12. Diagnostic Techniques Used to Study Chemical-Vapor-Deposited Diamond Films

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    2000-01-01

    The advantages and utility of chemical-vapor-deposited (CVD) diamond as an industrial ceramic can only be realized if the price and quality are right. Until recently, this technology was of interest only to the academic and basic research community. However, interest has grown because of advances made by leading CVD diamond suppliers: 1) Reduction of the cost of CVD polycrystalline diamond deposition below $5/carat ($8/sq cm); 2) Installation of production capacity; 3) Epitaxial growth of CVD single-crystal diamond. Thus, CVD diamond applications and business are an industrial reality. At present, CVD diamond is produced in the form of coatings or wafers. CVD diamond film technology offers a broader technological potential than do natural and high-pressure synthetic diamonds because size, geometry, and eventually cost will not be as limiting. Now that they are cost effective, diamond coatings - with their extreme properties - can be used in a variety of applications. Diamond coatings can improve many of the surface properties of engineering substrate materials, including erosion, corrosion, and wear resistance. Examples of actual and potential applications, from microelectromechanical systems to the wear parts of diamond coatings and related superhard coatings are described. For example, diamond coatings can be used as a chemical and mechanical barrier for the space shuttles check valves, particularly on the guide pins and seat assemblies.

  13. Superhydrophobicity of polyvinylidene fluoride membrane fabricated by chemical vapor deposition from solution

    NASA Astrophysics Data System (ADS)

    Zheng, Zhenrong; Gu, Zhenya; Huo, Ruiting; Ye, Yonghong

    2009-05-01

    Due to the chemical stability and flexibility, polyvinylidene fluoride (PVDF) membranes are widely used as the topcoat of architectural membrane structures, roof materials of vehicle, tent fabrics, and so on. Further modified PVDF membrane with superhydrophobic property may be even superior as the coating layer surface. The lotus flower is always considered to be a sacred plant, which can protect itself against water, dirt, and dust. The superhydrophobic surface of lotus leaf is rough, showing the micro- and nanometer scale morphology. In this work, the microreliefs of lotus leaf were mimicked using PVDF membrane and the nanometer scale peaks on the top of the microreliefs were obtained by the method of chemical vapor deposition from solution. The surface morphology of PVDF membrane was investigated by scanning electronic microscopy (SEM) and atomic force microscope (AFM). Elemental composition analysis by X-ray photoelectron spectroscopy (XPS) revealed that the material of the nanostructure of PVDF membrane was polymethylsiloxane. On the lotus-leaf-like PVDF membrane, the water contact angle and sliding angle were 155° and 4°, respectively, exhibiting superhydrophobic property.

  14. Metal Nanoparticles Protected with Monolayers: Applications for Chemical Vapor Sensing and Gas Chromatography

    SciTech Connect

    Grate, Jay W.; Nelson, David A.; Skaggs, Rhonda L.; Synovec, Robert E.; Gross, Gwen M.

    2004-03-31

    Nanoparticles and nanoparticle-based materials are of considerable interest for their unique properties and their potential for use in a variety of applications. Metal nanoparticles, in which each particle’s surface is coated with a protective organic monolayer, are of particular interest because the surface monolayer stabilizes them relative to aggregation and they can be taken up into solutions.(1-4) As a result they can be processed into thin films for device applications. We will refer to these materials as monolayer-protected nanoparticles, or MPNs. Typically the metal is gold, the organic layer is a self-assembled thiol layer, and this composition will be assumed throughout the remainder of this chapter. A diversity of materials and properties is readily accessible by straightforward synthetic procedures, either by the structures of the monolayer-forming thiols used in the synthesis or by post-synthetic modifications of the monolayers. A particularly promising application for these materials is as selective layers on chemical vapor sensors. In this role, the thin film of MPNs on the device surface serves to collect and concentrate gas molecules at the sensor’s surface. Their sorptive properties also lend them to use as new nanostructured gas chromatographic stationary phases. This chapter will focus on the sorptive properties of MPNs as they relate to chemical sensors and gas chromatography.

  15. Gas temperature measurements inside a hot wall chemical vapor synthesis reactor.

    PubMed

    Notthoff, Christian; Schilling, Carolin; Winterer, Markus

    2012-11-01

    One key but complex parameter in the chemical vapor synthesis (CVS) of nanoparticles is the time temperature profile of the gas phase, which determines particle characteristics such as size (distribution), morphology, microstructure, crystal, and local structure. Relevant for the CVS process and for the corresponding particle characteristics is, however, not the T(t)-profile generated by an external energy source such as a hot wall or microwave reactor but the temperature of the gas carrying reactants and products (particles). Due to a complex feedback of the thermodynamic and chemical processes in the reaction volume with the external energy source, it is very difficult to predict the real gas phase temperature field from the externally applied T(t)-profile. Therefore, a measurement technique capable to determine the temperature distribution of the gas phase under process conditions is needed. In this contribution, we demonstrate with three proof of principle experiments the use of laser induced fluorescence thermometry to investigate the CVS process under realistic conditions.

  16. Chemical vapor deposition grown monolayer graphene field-effect transistors with reduced impurity concentration

    NASA Astrophysics Data System (ADS)

    Ha, Tae-Jun; Lee, Alvin

    2015-07-01

    We report on the restoration of the electronic characteristics of waferscale chemical vapor deposition (CVD) monolayer graphene field-effect transistors (GFETs) by reducing the impurity concentration. An optimized electropolishing process on copper foils combined with carbon-fluorine encapsulation using a suitable amorphous fluoropolymer enables reducing the surface roughness of graphene and screening out interfacial impurity scattering, which leads to an improvement in all key device metrics. The conductivity at the Dirac point is substantially reduced, resulting in an increase in the on-off current ratio. In addition, the field-effect mobility increased from 1817 to 3918 cm2/V-s, the impurity concentration decreased from 1.1 × 1012 to 2.1 × 1011 cm-2 and the electron and hole transport became more symmetric. Significantly, favorable shifts toward zero voltage were observed in the Dirac point. We postulate that the smoother surface due to electropolishing and a pool of strong dipole-dipole moments in the flouropolymer coating provide a charge buffer that relaxes the fluctuation in the electron-hole puddles. We also investigate the long-term stability in GFETs encapsulated with fluoropolymer, which exhibit a high hydrophobicity that suppresses the chemical interaction with water molecules. [Figure not available: see fulltext.

  17. Plasma restructuring of catalysts for chemical vapor deposition of carbon nanotubes

    SciTech Connect

    Cantoro, M.; Hofmann, S.; Pisana, S.; Parvez, A.; Fasoli, A.; Scardaci, V.; Ferrari, A. C.; Robertson, J.; Mattevi, C.; Ducati, C.

    2009-03-15

    The growth of multiwalled carbon nanotubes and carbon nanofibers by catalytic chemical vapor deposition at lower temperatures is found to be aided by a separate catalyst pretreatment step in which the catalyst thin film is restructured into a series of nanoparticles with a more active surface. The restructuring is particularly effective when carried out by an ammonia plasma. The nature of the restructuring is studied by atomic force microscopy, transmission electron microscopy, x-ray photoelectron spectroscopy, and Raman. We find that as the growth temperature decreases, there is a limiting maximum catalyst thickness, which gives any nanotube growth. Plasmas are found to restructure the catalyst by a combination of physical etching and chemical modification. Large plasma powers can lead to complete etching of thin catalyst films, and hence loss of activity. Ni is found to be the better catalyst at low temperatures because it easily reduced from any oxide form to the catalytically active metallic state. On the other hand, Fe gives the largest nanotube length and density yield at moderate temperatures because it is less easy to reduce at low temperatures and it is more easily poisoned at high temperatures.

  18. Mechanism of incipient oxidation of bulk chemical vapor deposited Si3N4

    NASA Technical Reports Server (NTRS)

    Ogbuji, L. U. T.; Jayne, D. T.

    1993-01-01

    X-ray photoelectron spectroscopy was employed, in conjunction with ion bombardment, to analyze the chemical composition profile across thin (less than 50 nm) oxide films on chemically vapor deposited Si3N4. The thermal oxides were grown in dry oxygen at 1100 C on samples with or without native oxide film (formed in room air). The results show that the thermal oxidation product was silicon oxynitride of graded N:O ratio, and that the presence of a native oxide film promotes the formation of a SiO2 crust over the oxynitride. It is proposed that the fundamental mechanism of Si3N4 oxidation is progressive O-for-N substitution in the silicon oxynitride unit tetrahedron, which is best designated SiN(2-x)O(2+x), where x is also an index of depth. The corresponding equation for nonstoichiometric oxidation of Si3N4 describes a bulk (rather than an interface) reaction process, with significant implications for O2 and N2 fluxes and diffusivities.

  19. Control of interface nanoscale structure created by plasma-enhanced chemical vapor deposition.

    PubMed

    Peri, Someswara R; Akgun, Bulent; Satija, Sushil K; Jiang, Hao; Enlow, Jesse; Bunning, Timothy J; Foster, Mark D

    2011-09-01

    Tailoring the structure of films deposited by plasma-enhanced chemical vapor deposition (PECVD) to specific applications requires a depth-resolved understanding of how the interface structures in such films are impacted by variations in deposition parameters such as feed position and plasma power. Analysis of complementary X-ray and neutron reflectivity (XR, NR) data provide a rich picture of changes in structure with feed position and plasma power, with those changes resolved on the nanoscale. For plasma-polymerized octafluorocyclobutane (PP-OFCB) films, a region of distinct chemical composition and lower cross-link density is found at the substrate interface for the range of processing conditions studied and a surface layer of lower cross-link density also appears when plasma power exceeds 40 W. Varying the distance of the feed from the plasma impacts the degree of cross-linking in the film center, thickness of the surface layer, and thickness of the transition region at the substrate. Deposition at the highest power, 65 W, both enhances cross-linking and creates loose fragments with fluorine content higher than the average. The thickness of the low cross-link density region at the air interface plays an important role in determining the width of the interface built with a layer subsequently deposited atop the first. PMID:21875044

  20. Superior Mobility in Chemical Vapor Deposition Synthesized Graphene by Grain Size Engineering

    NASA Astrophysics Data System (ADS)

    Petrone, Nicholas; Dean, Cory; Meric, Inanc; van der Zande, Arend; Huang, Pinshane; Wang, Lei; Muller, David; Shepard, Kenneth; Hone, James

    2012-02-01

    Chemical vapor deposition (CVD) offers a promising method to produce large-area films of graphene, crucial for commercial realization of graphene-based applications. However, electron transport in CVD grown graphene has continued to fall short of the performance demonstrated by graphene derived from mechanical exfoliation. Lattice defects and grain boundaries developed during growth, structural defects and chemical contamination introduced during transfer, and charged scatterers present in sub-optimal dielectric substrates have all been identified as sources of disorder in CVD grown graphene devices. We grow CVD graphene and fabricate field-effect transistors, attempting to minimize potential sources of disorder. We reduce density of grain boundaries in CVD graphene by controlling domain sizes up to 250 microns. By transferring CVD graphene onto h-BN utilizing a dry-transfer method, we minimize trapped charges at the interface between graphene and in the underlying substrate. We report field-effect mobilities up to 110,000 cm2V-1s-1 and oscillations in magnetotransport measurements below 1 T, confirming the high quality and low disorder in our CVD graphene devices.

  1. Flexible Nonvolatile Polymer Memory Array on Plastic Substrate via Initiated Chemical Vapor Deposition.

    PubMed

    Jang, Byung Chul; Seong, Hyejeong; Kim, Sung Kyu; Kim, Jong Yun; Koo, Beom Jun; Choi, Junhwan; Yang, Sang Yoon; Im, Sung Gap; Choi, Sung-Yool

    2016-05-25

    Resistive random access memory based on polymer thin films has been developed as a promising flexible nonvolatile memory for flexible electronic systems. Memory plays an important role in all modern electronic systems for data storage, processing, and communication; thus, the development of flexible memory is essential for the realization of flexible electronics. However, the existing solution-processed, polymer-based RRAMs have exhibited serious drawbacks in terms of the uniformity, electrical stability, and long-term stability of the polymer thin films. Here, we present poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3)-based RRAM arrays fabricated via the solvent-free technique called initiated chemical vapor deposition (iCVD) process for flexible memory application. Because of the outstanding chemical stability of pV3D3 films, the pV3D3-RRAM arrays can be fabricated by a conventional photolithography process. The pV3D3-RRAM on flexible substrates showed unipolar resistive switching memory with an on/off ratio of over 10(7), stable retention time for 10(5) s, excellent cycling endurance over 10(5) cycles, and robust immunity to mechanical stress. In addition, pV3D3-RRAMs showed good uniformity in terms of device-to-device distribution. The pV3D3-RRAM will pave the way for development of next-generation flexible nonvolatile memory devices. PMID:27142537

  2. Plasma restructuring of catalysts for chemical vapor deposition of carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Cantoro, M.; Hofmann, S.; Mattevi, C.; Pisana, S.; Parvez, A.; Fasoli, A.; Ducati, C.; Scardaci, V.; Ferrari, A. C.; Robertson, J.

    2009-03-01

    The growth of multiwalled carbon nanotubes and carbon nanofibers by catalytic chemical vapor deposition at lower temperatures is found to be aided by a separate catalyst pretreatment step in which the catalyst thin film is restructured into a series of nanoparticles with a more active surface. The restructuring is particularly effective when carried out by an ammonia plasma. The nature of the restructuring is studied by atomic force microscopy, transmission electron microscopy, x-ray photoelectron spectroscopy, and Raman. We find that as the growth temperature decreases, there is a limiting maximum catalyst thickness, which gives any nanotube growth. Plasmas are found to restructure the catalyst by a combination of physical etching and chemical modification. Large plasma powers can lead to complete etching of thin catalyst films, and hence loss of activity. Ni is found to be the better catalyst at low temperatures because it easily reduced from any oxide form to the catalytically active metallic state. On the other hand, Fe gives the largest nanotube length and density yield at moderate temperatures because it is less easy to reduce at low temperatures and it is more easily poisoned at high temperatures.

  3. Control of interface nanoscale structure created by plasma-enhanced chemical vapor deposition.

    PubMed

    Peri, Someswara R; Akgun, Bulent; Satija, Sushil K; Jiang, Hao; Enlow, Jesse; Bunning, Timothy J; Foster, Mark D

    2011-09-01

    Tailoring the structure of films deposited by plasma-enhanced chemical vapor deposition (PECVD) to specific applications requires a depth-resolved understanding of how the interface structures in such films are impacted by variations in deposition parameters such as feed position and plasma power. Analysis of complementary X-ray and neutron reflectivity (XR, NR) data provide a rich picture of changes in structure with feed position and plasma power, with those changes resolved on the nanoscale. For plasma-polymerized octafluorocyclobutane (PP-OFCB) films, a region of distinct chemical composition and lower cross-link density is found at the substrate interface for the range of processing conditions studied and a surface layer of lower cross-link density also appears when plasma power exceeds 40 W. Varying the distance of the feed from the plasma impacts the degree of cross-linking in the film center, thickness of the surface layer, and thickness of the transition region at the substrate. Deposition at the highest power, 65 W, both enhances cross-linking and creates loose fragments with fluorine content higher than the average. The thickness of the low cross-link density region at the air interface plays an important role in determining the width of the interface built with a layer subsequently deposited atop the first.

  4. Heat-Resistant Co-W Catalytic Metals for Multilayer Graphene Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Ueno, Kazuyoshi; Karasawa, Yusuke; Kuwahara, Satoru; Baba, Shotaro; Hanai, Hitoshi; Yamazaki, Yuichi; Sakuma, Naoshi; Kajita, Akihiro; Sakai, Tadashi

    2013-04-01

    Multilayer graphene (MLG) is expected to be a low-resistance and high-reliability interconnect material replacing copper (Cu) in nanoscale interconnects. Chemical vapor deposition (CVD) on catalytic metals is expected as a practical method for MLG deposition. To obtain high-quality MLG films without catalyst agglomeration by CVD, heat-resistant Co-W catalytic metals were investigated. The agglomeration of the Co-W catalytic metals was suppressed by increasing the W composition; however, MLG deposition was suppressed at the same time. The effects of W addition on the MLG growth were discussed from the viewpoints of the crystallographic change of the Co-W catalysts and chemical reactions. It was found that the Co grain size was reduced and the fcc Co formation was suppressed by W addition. In addition, graphite formation was supposed to be suppressed by W addition owing to the formation of phases other than fcc Co according to the Co-W-C phase diagram. With the optimum W concentration, MLG crystallinity was improved by high-temperature CVD using the heat-resistant Co-W catalytic metals (0.7 at. %) without agglomeration, compared with that in the case of using pure-Co catalysts.

  5. Epitaxial Thin Film Silicon Solar Cells Fabricated by Hot Wire Chemical Vapor Deposition Below 750 ..deg..C: Preprint

    SciTech Connect

    Alberi, K.; Martin, I. T.; Shub, M.; Teplin, C. W.; Iwaniczko, E.; Xu, Y.; duda, A.; Stradin, P.; Johnston, S. W.; Romero, M. J.; Branz, H. M.; Young, D. L.

    2009-06-01

    We report on fabricating film c-Si solar cells on Si wafer templates by hot-wire chemical vapor deposition. These devices, grown at glass-compatible temperatures < 750..deg..C, demonstrate open-circuit voltages > 500 mV and efficiencies > 5%.

  6. Deposition of SiOx layer by plasma-enhanced chemical vapor deposition for the protection of silver (Ag) surfaces

    NASA Astrophysics Data System (ADS)

    Tarazi, Saad Al; Volpe, Luca; Antonelli, Luca; Jafer, Rashida; Batani, Dimitri; d'Esposito, Antonio; Vitobello, Marialuisa

    2014-03-01

    Silver surfaces have been treated with plasma-enhanced chemical vapor deposition to produce SiO2-like coatings for possible applications in the jewelry industry. Different experimental conditions have been tested in order to optimize the protective effectiveness of the deposited layers. Samples were analyzed with optical and scanning electron microscopy and energy-dispersive spectrometry.

  7. High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Vohra, Yogesh K. (Inventor); McCauley, Thomas S. (Inventor)

    1997-01-01

    The deposition of high quality diamond films at high linear growth rates and substrate temperatures for microwave-plasma chemical vapor deposition is disclosed. The linear growth rate achieved for this process is generally greater than 50 .mu.m/hr for high quality films, as compared to rates of less than 5 .mu.m/hr generally reported for MPCVD processes.

  8. Superhydrophobic photocatalytic surfaces through direct incorporation of titania nanoparticles into a polymer matrix by aerosol assisted chemical vapor deposition.

    PubMed

    Crick, Colin R; Bear, Joseph C; Kafizas, Andreas; Parkin, Ivan P

    2012-07-10

    A new class of superhydrophobic photocatalytic surfaces that are self-cleaning through light-induced photodegradation and the Lotus effect are presented. The films are formed in a single-step aerosol-assisted chemical vapor deposition (AACVD) process. The films are durable and show no degradation on continuous exposure to UV-C radiation. PMID:22706974

  9. Nonradioactive Environmental Emissions Chemical Source Term for the Double Shell Tank (DST) Vapor Space During Waste Retrieval Operations

    SciTech Connect

    MAY, T.H.

    2000-04-21

    A nonradioactive chemical vapor space source term for tanks on the Phase 1 and the extended Phase 1 delivery, storage, and disposal mission was determined. Operations modeled included mixer pump operation and DST waste transfers. Concentrations of ammonia, specific volatile organic compounds, and quantitative volumes of aerosols were estimated.

  10. Chemical Vapor Deposition Synthesized Atomically Thin Molybdenum Disulfide with Optoelectronic-Grade Crystalline Quality.

    PubMed

    Bilgin, Ismail; Liu, Fangze; Vargas, Anthony; Winchester, Andrew; Man, Michael K L; Upmanyu, Moneesh; Dani, Keshav M; Gupta, Gautam; Talapatra, Saikat; Mohite, Aditya D; Kar, Swastik

    2015-09-22

    The ability to synthesize high-quality samples over large areas and at low cost is one of the biggest challenges during the developmental stage of any novel material. While chemical vapor deposition (CVD) methods provide a promising low-cost route for CMOS compatible, large-scale growth of materials, it often falls short of the high-quality demands in nanoelectronics and optoelectronics. We present large-scale CVD synthesis of single- and few-layered MoS2 using direct vapor-phase sulfurization of MoO2, which enables us to obtain extremely high-quality single-crystal monolayer MoS2 samples with field-effect mobility exceeding 30 cm(2)/(V s) in monolayers. These samples can be readily synthesized on a variety of substrates, and demonstrate a high-degree of optoelectronic uniformity in Raman and photoluminescence mapping over entire crystals with areas exceeding hundreds of square micrometers. Because of their high crystalline quality, Raman spectroscopy on these samples reveal a range of multiphonon processes through peaks with equal or better clarity compared to past reports on mechanically exfoliated samples. This enables us to investigate the layer thickness and substrate dependence of the extremely weak phonon processes at 285 and 487 cm(-1) in 2D-MoS2. The ultrahigh, optoelectronic-grade crystalline quality of these samples could be further established through photocurrent spectroscopy, which clearly reveal excitonic states at room temperature, a feat that has been previously demonstrated only on samples which were fabricated by micro-mechanical exfoliation and then artificially suspended across trenches. Our method reflects a big step in the development of atomically thin, 2D-MoS2 for scalable, high-quality optoelectronics. PMID:26256639

  11. Chemical Vapor Deposition Synthesized Atomically Thin Molybdenum Disulfide with Optoelectronic-Grade Crystalline Quality.

    PubMed

    Bilgin, Ismail; Liu, Fangze; Vargas, Anthony; Winchester, Andrew; Man, Michael K L; Upmanyu, Moneesh; Dani, Keshav M; Gupta, Gautam; Talapatra, Saikat; Mohite, Aditya D; Kar, Swastik

    2015-09-22

    The ability to synthesize high-quality samples over large areas and at low cost is one of the biggest challenges during the developmental stage of any novel material. While chemical vapor deposition (CVD) methods provide a promising low-cost route for CMOS compatible, large-scale growth of materials, it often falls short of the high-quality demands in nanoelectronics and optoelectronics. We present large-scale CVD synthesis of single- and few-layered MoS2 using direct vapor-phase sulfurization of MoO2, which enables us to obtain extremely high-quality single-crystal monolayer MoS2 samples with field-effect mobility exceeding 30 cm(2)/(V s) in monolayers. These samples can be readily synthesized on a variety of substrates, and demonstrate a high-degree of optoelectronic uniformity in Raman and photoluminescence mapping over entire crystals with areas exceeding hundreds of square micrometers. Because of their high crystalline quality, Raman spectroscopy on these samples reveal a range of multiphonon processes through peaks with equal or better clarity compared to past reports on mechanically exfoliated samples. This enables us to investigate the layer thickness and substrate dependence of the extremely weak phonon processes at 285 and 487 cm(-1) in 2D-MoS2. The ultrahigh, optoelectronic-grade crystalline quality of these samples could be further established through photocurrent spectroscopy, which clearly reveal excitonic states at room temperature, a feat that has been previously demonstrated only on samples which were fabricated by micro-mechanical exfoliation and then artificially suspended across trenches. Our method reflects a big step in the development of atomically thin, 2D-MoS2 for scalable, high-quality optoelectronics.

  12. Development of a fiber optic chemical sensor for detection of toxic vapors

    NASA Astrophysics Data System (ADS)

    Bansal, Lalitkumar

    Nerve agents are among the most potent of the chemical warfare agents being highly toxic in both liquid and gaseous form. In this thesis the development of a fiber optic chemical sensor for detection of organophosphorous nerve agent sarin precursor dimethyl-methylphosphonate (DMMP) is presented. The optical fiber sensor developed is based on the modified cladding approach using conducting polymer polypyrrole as a chemo-chromic material. Polypyrrole is synthesized by chemical oxidation and characterized by FTIR and Raman Spectroscopy. To characterize the electrical and optical property changes that come about in polypyrrole upon exposure to DMMP, four probe technique, ellipsometry, thin film transmission are used. The polypyrrole coating is applied to un-cladded fiber core using two different coating techniques, i.e. in-situ deposition and monomer vapor phase deposition. Preliminary results show an intensity decrease of 2.1% when the sensing element is exposed to 134ppm of DMMP. Three different dopant anions, i.e. 1--5, Napthalene disulphonic acid, Anthraquenone sulphonic acid and Hydrochloric acid, are added to improve the sensor sensitivity. The developed device is tested for DMMP sensitivity optimizations in terms of substrate nature, Cu2+ dopant, waveguide geometry, and light source intensity. The sensitivity optimization has resulted in a 25.75% sensor response and a detection of 26ppm of DMMP concentration. Selectivity and environmental stability of the developed device is investigated. The mechanical property and adhesion investigated using the nanoindentation and ASTM D-4541 pull-off test method. The influence of these adhesion enhancements on the sensor response is investigated.

  13. Microstructural, chemical and textural characterization of ZnO nanorods synthesized by aerosol assisted chemical vapor deposition

    SciTech Connect

    Sáenz-Trevizo, A.; Amézaga-Madrid, P.; Fuentes-Cobas, L.; Pizá-Ruiz, P.; Antúnez-Flores, W.; Ornelas-Gutiérrez, C.; Pérez-García, S.A.; Miki-Yoshida, M.

    2014-12-15

    ZnO nanorods were synthesized by aerosol assisted chemical vapor deposition onto TiO{sub 2} covered borosilicate glass substrates. Deposition parameters were optimized and kept constant. Solely the effect of different nozzle velocities on the growth of ZnO nanorods was evaluated in order to develop a dense and uniform structure. The crystalline structure was characterized by conventional X-ray diffraction in grazing incidence and Bragg–Brentano configurations. In addition, two-dimensional grazing incidence synchrotron radiation diffraction was employed to determine the preferred growth direction of the nanorods. Morphology and growth characteristics analyzed by electron microscopy were correlated with diffraction outcomes. Chemical composition was established by X-ray photoelectron spectroscopy. X-ray diffraction results and X-ray photoelectron spectroscopy showed the presence of wurtzite ZnO and anatase TiO{sub 2} phases. Morphological changes noticed when the deposition velocity was lowered to the minimum, indicated the formation of relatively vertically oriented nanorods evenly distributed onto the TiO{sub 2} buffer film. By coupling two-dimensional X-ray diffraction and computational modeling with ANAELU it was proved that a successful texture determination was achieved and confirmed by scanning electron microscopy analysis. Texture analysis led to the conclusion of a preferred growth direction in [001] having a distribution width Ω = 20° ± 2°. - Highlights: • Uniform and pure single-crystal ZnO nanorods were obtained by AACVD technique. • Longitudinal and transversal axis parallel to the [001] and [110] directions, respectively. • Texture was determined by 2D synchrotron diffraction and electron microscopy analysis. • Nanorods have its [001] direction distributed close to the normal of the substrate. • Angular spread about the preferred orientation is 20° ± 2°.

  14. Chemical vapor deposition and characterization of zinc oxide thin films and nanostructures

    NASA Astrophysics Data System (ADS)

    Liu, Xiang

    2003-07-01

    Zinc oxide (ZnO) is a wide band gap semiconductor material. It is a promising candidate for short wavelength optoelectronic devices. Single crystalline and nanocrystalline ZnO thin films have been grown by organo-metallic chemical vapor depositions in a pulsed organo-metallic beam epitaxy (POMBE) system. The structural and morphological properties of ZnO films strongly depend on growth conditions. For epitaxially grown ZnO films on sapphire under optimal conditions, excellent crystallinity have been confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy (TEM) studies. Nanocrystalline films with columnar-shaped grains are grown with different grain sizes. With decreasing growth temperature, the morphology of POMBE grown ZnO goes through an transition from continuous thin film to nanorods. Well-aligned ZnO nanorods have been grown using two-step chemical vapor deposition methods. The growth mechanism is based on studies of ZnO nucleation. By controlling substrate temperature and oxygen concentration during the nucleation and growth steps, ZnO nanorods growth is achieved without any catalysts. High-resolution TEM studies show that ZnO nanorods are single crystals. Alignment of these nanorods depends on lattice match between ZnO and substrate. ZnO nanorods with different areal densities can be obtained by varying nucleation time. The photoluminescence (PL) spectra of nonorods have shown band edge emission at 380 nm with full width at half maximum (FWHM) of 106 meV which is comparable to films grown by molecular beam epitaxy (MBE). Green emissions are found to originate from oxygen vacancies and zinc interstitials; while orange-red emissions are attributed to oxygen interstitials. Optical properties of ZnO thin films and nanostructures are studied. Clear excitonic features observed in different optical measurements have proven good optical qualities of single crystal ZnO films. By alloying with magnesium, band gap of ZnO can be widened

  15. Process development for the manufacture of an integrated dispenser cathode assembly using laser chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Johnson, Ryan William

    2005-07-01

    Laser Chemical Vapor Deposition (LCVD) has been shown to have great potential for the manufacture of small, complex, two or three dimensional metal and ceramic parts. One of the most promising applications of the technology is in the fabrication of an integrated dispenser cathode assembly. This application requires the deposition of a boron nitride-molybdenum composite structure. In order to realize this structure, work was done to improve the control and understanding of the LCVD process and to determine experimental conditions conducive to the growth of the required materials. A series of carbon fiber and line deposition studies were used to characterize process-shape relationships and study the kinetics of carbon LCVD. These studies provided a foundation for the fabrication of the first high aspect ratio multi-layered LCVD wall structures. The kinetics studies enabled the formulation of an advanced computational model in the FLUENT CFD package for studying energy transport, mass and momentum transport, and species transport within a forced flow LCVD environment. The model was applied to two different material systems and used to quantify deposition rates and identify rate-limiting regimes. A computational thermal-structural model was also developed using the ANSYS software package to study the thermal stress state within an LCVD deposit during growth. Georgia Tech's LCVD system was modified and used to characterize both boron nitride and molybdenum deposition independently. The focus was on understanding the relations among process parameters and deposit shape. Boron nitride was deposited using a B3 N3H6-N2 mixture and growth was characterized by sporadic nucleation followed by rapid bulk growth. Molybdenum was deposited from the MoCl5-H2 system and showed slow, but stable growth. Each material was used to grow both fibers and lines. The fabrication of a boron nitride-molybdenum composite was also demonstrated. In sum, this work served to both advance the

  16. Chemical vapor deposition and atomic layer deposition of metal oxide and nitride thin films

    NASA Astrophysics Data System (ADS)

    Barton, Jeffrey Thomas

    Processes for depositing thin films with various electronic, optical, mechanical, and chemical properties are indispensable in many industries today. Of the many deposition methods available, chemical vapor deposition (CVD) has proved over time to be one of the most flexible, efficient, and cost-effective. Atomic layer deposition (ALD) is a newer process that is gaining favor as a method for depositing films with excellent properties and unparalleled precision. This work describes the development of novel CVD and ALD processes to deposit a variety of materials. Hafnium oxide and zirconium oxide show promise as replacements for SiO 2 as gate dielectrics in future-generation transistors. These high-k materials would provide sufficient capacitance with layers thick enough to avoid leakage from tunneling. An ALD method is presented here for depositing conformal hafnium oxide from tetrakis-(diethylamido)hafnium and oxygen gas. A CVD method for depositing zirconium oxide from tetrakis-(dialkylamido)zirconium and either oxygen gas or water vapor is also described. The use of copper for interconnects in integrated circuits requires improved diffusion barrier materials, given its high diffusivity compared to the previously-used aluminum and tungsten. Tungsten nitride has a low resistivity among barrier materials, and can be deposited in amorphous films that are effective diffusion barriers in layers as thin as a few nanometers. Here we demonstrate CVD and plasma-enhanced CVD methods to deposit tungsten nitride films from bis-(dialkylamido)bis-( tert-butylimido)tungsten precursors and ammonia gas. Recent findings had shown uniform copper growth on tantalum silicate films, without the dewetting that usually occurs on oxide surfaces. Tantalum and tungsten silicates were deposited by a CVD reaction from the reaction of either tris-(diethylamido)ethylimido tantalum or bis-(ethylmethylamido)-bis-( tert-butylimido)tungsten with tris-(tert-butoxy)silanol. The ability of evaporated

  17. Role of hydrogen in the chemical vapor deposition growth of MoS2 atomic layers

    NASA Astrophysics Data System (ADS)

    Li, Xiao; Li, Xinming; Zang, Xiaobei; Zhu, Miao; He, Yijia; Wang, Kunlin; Xie, Dan; Zhu, Hongwei

    2015-04-01

    Hydrogen plays a crucial role in the chemical vapor deposition (CVD) growth of graphene. Here, we have revealed the roles of hydrogen in the two-step CVD growth of MoS2. Our study demonstrates that hydrogen acts as the following: (i) an inhibitor of the thermal-induced etching effect in the continuous film growth process; and (ii) a promoter of the desulfurization reaction by decreasing the S/Mo atomic ratio and the oxidation reaction of the obtained MoSx (0 < x < 2) films. A high hydrogen content of more than 100% in argon forms nano-sized circle-like defects and damages the continuity and uniformity of the film. Continuous MoS2 films with a high crystallinity and a nearly perfect S/Mo atomic ratio were finally obtained after sulfurization annealing with a hydrogen content in the range of 20%-80%. This insightful understanding reveals the crucial roles of hydrogen in the CVD growth of MoS2 and paves the way for the controllable synthesis of two-dimensional materials.Hydrogen plays a crucial role in the chemical vapor deposition (CVD) growth of graphene. Here, we have revealed the roles of hydrogen in the two-step CVD growth of MoS2. Our study demonstrates that hydrogen acts as the following: (i) an inhibitor of the thermal-induced etching effect in the continuous film growth process; and (ii) a promoter of the desulfurization reaction by decreasing the S/Mo atomic ratio and the oxidation reaction of the obtained MoSx (0 < x < 2) films. A high hydrogen content of more than 100% in argon forms nano-sized circle-like defects and damages the continuity and uniformity of the film. Continuous MoS2 films with a high crystallinity and a nearly perfect S/Mo atomic ratio were finally obtained after sulfurization annealing with a hydrogen content in the range of 20%-80%. This insightful understanding reveals the crucial roles of hydrogen in the CVD growth of MoS2 and paves the way for the controllable synthesis of two-dimensional materials. Electronic supplementary

  18. Nanostructure and nanochemistry of gate dielectrics and processing of tunable dielectrics by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Wang, Chang-Gong

    2002-01-01

    PbTiO3-SrTiO3 (PST) thin films that are voltage tunable were developed for high-frequency application by a metal-organic chemical vapor deposition technique at rates of 10--15 nm/min. PST films (90--150nm) were deposited on Pt/TiO2/SiO2/Si and Sapphire (0001) substrates and characterized by various techniques to control the composition and structure. The tunability and dielectric loss (tandelta) of a 90nm PST film were 37% and 0.02, respectively, at 1MHz and 3V in a parallel plates capacitor (Pt/PST/Pt) configuration. PST films on (0001) Sapphire were epitaxial with an orientation relationship of PST [1 1 1]// Sapphire [0 0 0 1], and in-plane alignment of PST [1 i 0]// Sapphire [2 i i 0] and PST [i i 2]// Sapphire [0 1 i 0]. A coplanar waveguide structure was used to determine the tunability (31.3%) and figure of merit (13 degrees/dB) of an epitaxial 100nm PST film on Sapphire at 12 GHz. The tandelta, derived from transmission-type resonator, is explained in terms of composition inhomogeneities and in-plane biaxial stress due to lattice mismatch between PST and Sapphire. A 4nm-ZrOx/1.2nm-SiOx layer structure was formed on 200mm Si wafers by a manufacturable atomic layer chemical vapor deposition (ALCVD) technique for advanced metal oxide semiconductor gate dielectrics. The nanostructure and nanochemistry of this gate stack were investigated by various techniques, before and after oxygen annealing (700°C). The results showed that a multiphase and heterogeneous structure evolved, defined as Zr-O/interlayer(IL)/Si stack. The critical parameters that control the nanostructural and nanochemical evolution are discussed using some simple mechanistic explanations and literature data. The stacks were characterized for their dielectric and electrical properties using a Pt/Zr-O/IL/Si capacitor configuration. The flat band shift (DeltaV FB), capacitance voltage hysteresis, and leakage current density were correlated with defects and roughness of the interface, thickness of IL

  19. Synthesis of one-dimensional boron-related nanostructures by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Guo, Li

    in the submicron range were used to synthesize aligned BNNTs. Fine BN nanostructures with a diameter around 10-20 nm and length up to 10 microns were grown and dispersed in the Ni dots. Nanosized Ni dots were suggested for the growth of the vertically aligned BNNTs. Boron nanowires (BNWs) were also grown by the decomposition of diborane using a thermal CVD process at a temperature of 900°C, a pressure of 20 torr, diborane flow rate (5 vol.% in hydrogen) of 5 sccm, and nitrogen flow rate of 55 sccm. These BNWs had diameters in a range of 20-200 nanometers and lengths up to several tens of micrometers. Repeatable Raman spectra indicated icosahedra B12 to be the basic building units forming the B nanowires. Amorphous BNWs with rough surface were obtained without any catalysts on different substrates, such as Si wafer or ZrB2 powders. A vapor-solid (VS) growth was proposed for the amorphous BNWs, in which the solid phase precipitated directly from the vapor phase reactions. The amorphous BNWs were modified for size and composition using a plasma CVD process containing argon, ammonia and hydrogen. The diameters of these BNWs were reduced from 200 nm to several tens of nanometers, and a small amount of N was incorporated into BNWs after the plasma treatment. On the other hand, the metal catalyst proved to be effective for the growth of crystalline BNWs. Tetragonal BNWs with smooth surface were grown on thin Ni film (1 nm) coated Si substrates. Ni attachment was observed at the tip of the BNW for the first time, which indicated that the vapor-liquid-solid (VLS) growth mechanism can be used for synthesis of the BNW. The diameters of these BNWs were strongly dependent on the size of the metal particles encapsulated in the BNWs. In summary, two boron-related nanostructures were synthesized by chemical vapor deposition (CVD) in this work. A new method was successfully developed to decrease the substrate temperature more than 400°C to fabricate boron nitride nanotubes in a

  20. Chemical Vapor Deposition of MoS2: Insight Into the Growth Mechanism by Separated Gas Flow Experiments.

    PubMed

    Yanase, Takashi; Watanabe, Sho; Weng, Mengting; Nagahama, Taro; Shimada, Toshihiro

    2016-04-01

    We report detailed experiments on chemical vapor deposition of an atomic' layer semiconductor MoS2. We developed a new type of CVD system in which MoO3 and S sources are separately supplied to the substrates. It has become possible to precisely control the supply of the materials separately in the order of seconds. Raman and XPS analysis of the films grown under various conditions revealed that the initially obtained films are S-deficient and complete stoichiometry is reached after several minutes under S vapor flow. PMID:27451608

  1. Heteroepitaxial growth of Cd(1-x)Mn(x)Te on GaAs by metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Nouhi, Akbar; Stirn, Richard J.

    1987-01-01

    In this letter, preliminary results are reported of heteroepitaxial growth of the dilute magnetic semiconductor alloy Cd(1-x)Mn(x)Te on GaAs by metalorganic chemical vapor deposition. Dimethylcadmium (DMCd), diethyltellurium (DETe), and tricarbonyl (methylcyclopentadienyl) manganese (TCPMn) were used as source materials. The TCPMn had to be heated to as high as 140 C to provide the required vapor pressure. Films with Mn atomic fractions up to 30 percent have been grown over the temperature range 410-450 C. Results of optical absorption/transmission, photoluminescence, and X-ray diffraction measurements are presented along with a scanning electron micrograph showing good surface morphology of the grown layers.

  2. Y-junction carbon nanocoils: synthesis by chemical vapor deposition and formation mechanism

    PubMed Central

    Ding, Er-Xiong; Wang, Jing; Geng, Hong-Zhang; Wang, Wen-Yi; Wang, Yan; Zhang, Ze-Chen; Luo, Zhi-Jia; Yang, Hai-Jie; Zou, Cheng-Xiong; Kang, Jianli; Pan, Lujun

    2015-01-01

    Y-junction carbon nanocoils (Y-CNCs) were synthesized by thermal chemical vapor deposition using Ni catalyst prepared by spray-coating method. According to the emerging morphologies of Y-CNCs, several growth models were advanced to elucidate their formation mechanisms. Regarding the Y-CNCs without metal catalyst in the Y-junctions, fusing of contiguous CNCs and a tip-growth mechanism are considered to be responsible for their formation. However, as for the Y-CNCs with catalyst presence in the Y-junctions, the formation can be ascribed to nanoscale soldering/welding and bottom-growth mechanism. It is found that increasing spray-coating time for catalyst preparation generates agglomerated larger nanoparticles strongly adhering to the substrate, resulting in bottom-growth of CNCs and appearance of the metal catalyst in the Y-junctions. In the contrary case, CNCs catalyzed by isolated smaller nanoparticles develop Y-junctions with an absence of metal catalyst by virtue of weaker adhesion of catalyst with the substrate and tip-growth of CNCs. PMID:26063127

  3. Impedance spectroscopy of manganite films prepared by metalorganic chemical vapor deposition.

    PubMed

    Nakamura, Toshihiro; Homma, Kohei; Tachibana, Kunihide

    2011-09-01

    Polycrystalline Pr(1-x)CaxMnO3 (PCMO) films were prepared by liquid source metalorganic chemical vapor deposition using in situ infrared spectroscopic monitoring. The electric properties of the PCMO-based devices with Ni and Al electrodes (Ni-PCMO-Ni and Al-PCMO-Al devices) were studied by dc current-voltage (I-V) measurements and ac impedance spectroscopy. The current varied linearly with the applied voltage in Ni-PCMO-Ni devices, while nonlinear behavior was observed in I-V curves for Al-PCMO-Al devices. Impedance spectra were also different between Ni-PCMO-Ni and Al-PCMO-Al devices. The Cole-Cole plots for the Ni-PCMO-Ni devices showed only a single semicircular arc, which was assigned to the PCMO bulk impedance. Impedance spectra for the Al-PCMO-Al devices had two distinct components, which could be attributed to the PCMO bulk and to the interface between the PCMO film and the Al electrode, respectively. The bias dependence of the impedance spectra suggested that the resistance switching in the Al-PCMO-Al devices was mainly due to the resistance change in the interface between the film and the electrode. The metal electrode plays an important role in the resistance switching in the PCMO-based devices. The choice of the optimum metal electrodes is essential to the ReRAM application of the manganite-based devices.

  4. Investigation of chemical vapor deposition of garnet films for bubble domain memories

    NASA Technical Reports Server (NTRS)

    Besser, P. J.; Hamilton, T. N.

    1973-01-01

    The important process parameters and control required to grow reproducible device quality ferrimagnetic films by chemical vapor deposition (CVD) were studied. The investigation of the critical parameters in the CVD growth process led to the conclusion that the required reproducibility of film properties cannot be achieved with individually controlled separate metal halide sources. Therefore, the CVD growth effort was directed toward replacement of the halide sources with metallic sources with the ultimate goal being the reproducible growth of complex garnet compositions utilizing a single metal alloy source. The characterization of the YGdGaIG films showed that certain characteristics of this material, primarily the low domain wall energy and the large temperature sensitivity, severely limited its potential as a useful material for bubble domain devices. Consequently, at the time of the change from halide to metallic sources, the target film compositions were shifted to more useful materials such as YGdTmGaIG, YEuGaIG and YSmGaIG.

  5. Facile synthesis 3D flexible core-shell graphene/glass fiber via chemical vapor deposition

    PubMed Central

    2014-01-01

    Direct deposition of graphene layers on the flexible glass fiber surface to form the three-dimensional (3D) core-shell structures is offered using a two-heating reactor chemical vapor deposition system. The two-heating reactor is utilized to offer sufficient, well-proportioned floating C atoms and provide a facile way for low-temperature deposition. Graphene layers, which are controlled by changing the growth time, can be grown on the surface of wire-type glass fiber with the diameter from 30 nm to 120 um. The core-shell graphene/glass fiber deposition mechanism is proposed, suggesting that the 3D graphene films can be deposited on any proper wire-type substrates. These results open a facile way for direct and high-efficiency deposition of the transfer-free graphene layers on the low-temperature dielectric wire-type substrates. PACS 81.05.U-; 81.07.-b; 81.15.Gh PMID:25170331

  6. Optimization of silicon oxynitrides by plasma-enhanced chemical vapor deposition for an interferometric biosensor

    NASA Astrophysics Data System (ADS)

    Choo, Sung Joong; Lee, Byung-Chul; Lee, Sang-Myung; Park, Jung Ho; Shin, Hyun-Joon

    2009-09-01

    In this paper, silicon oxynitride layers deposited with different plasma-enhanced chemical vapor deposition (PECVD) conditions were fabricated and optimized, in order to make an interferometric sensor for detecting biochemical reactions. For the optimization of PECVD silicon oxynitride layers, the influence of the N2O/SiH4 gas flow ratio was investigated. RF power in the PEVCD process was also adjusted under the optimized N2O/SiH4 gas flow ratio. The optimized silicon oxynitride layer was deposited with 15 W in chamber under 25/150 sccm of N2O/SiH4 gas flow rates. The clad layer was deposited with 20 W in chamber under 400/150 sccm of N2O/SiH4 gas flow condition. An integrated Mach-Zehnder interferometric biosensor based on optical waveguide technology was fabricated under the optimized PECVD conditions. The adsorption reaction between bovine serum albumin (BSA) and the silicon oxynitride surface was performed and verified with this device.

  7. Hydrogen-free spray pyrolysis chemical vapor deposition method for the carbon nanotube growth: Parametric studies

    NASA Astrophysics Data System (ADS)

    Ionescu, Mihnea Ioan; Zhang, Yong; Li, Ruying; Sun, Xueliang; Abou-Rachid, Hakima; Lussier, Louis-Simon

    2011-05-01

    Spray pyrolysis chemical vapor deposition (CVD) in the absence of hydrogen at low carrier gas flow rates has been used for the growth of carbon nanotubes (CNTs). A parametric study of the carbon nanotube growth has been conducted by optimizing various parameters such as temperature, injection speed, precursor volume, and catalyst concentration. Experimental observations and characterizations reveal that the growth rate, size and quality of the carbon nanotubes are significantly dependent on the reaction parameters. Scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy techniques were employed to characterize the morphology, structure and crystallinity of the carbon nanotubes. The synthesis process can be applied to both semiconducting silicon wafer and conducting substrates such as carbon microfibers and stainless steel plates. This approach promises great potential in building various nanodevices with different electron conducting requirements. In addition, the absence of hydrogen as a carrier gas and the relatively low synthesis temperature (typically 750 °C) qualify the spray pyrolysis CVD method as a safe and easy way to scale up the CNT growth, which is applicable in industrial production.

  8. Equilibrium chemical vapor deposition growth of Bernal-stacked bilayer graphene.

    PubMed

    Zhao, Pei; Kim, Sungjin; Chen, Xiao; Einarsson, Erik; Wang, Miao; Song, Yenan; Wang, Hongtao; Chiashi, Shohei; Xiang, Rong; Maruyama, Shigeo

    2014-11-25

    Using ethanol as the carbon source, self-limiting growth of AB-stacked bilayer graphene (BLG) has been achieved on Cu via an equilibrium chemical vapor deposition (CVD) process. We found that during this alcohol catalytic CVD (ACCVD) a source-gas pressure range exists to break the self-limitation of monolayer graphene on Cu, and at a certain equilibrium state it prefers to form uniform BLG with a high surface coverage of ∼94% and AB-stacking ratio of nearly 100%. More importantly, once the BLG is completed, this growth shows a self-limiting manner, and an extended ethanol flow time does not result in additional layers. We investigate the mechanism of this equilibrium BLG growth using isotopically labeled (13)C-ethanol and selective surface aryl functionalization, and results reveal that during the equilibrium ACCVD process a continuous substitution of graphene flakes occurs to the as-formed graphene and the BLG growth follows a layer-by-layer epitaxy mechanism. These phenomena are significantly in contrast to those observed for previously reported BLG growth using methane as precursor.

  9. The evolution of carbon nanotubes during their growth by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Wang, Hengzhi; Ren, Z. F.

    2011-10-01

    During the growth of carbon nanotubes (CNTs) by plasma enhanced chemical vapor deposition (PECVD), plasma etching is the crucial factor that determines the growth mode and alignment of the CNTs. Focusing on a thin catalyst coating (Ni = 5 nm), this study finds that the CNT growth by PECVD goes through three stages from randomly entangled (I-CNTs) to partially aligned (II-CNTs) to fully aligned (III-CNTs). The I-CNTs and II-CNTs are mostly etched away by the plasma as time goes by ending up with III-CNTs as the only product when growth time is long enough. However, with a thickness of the catalyst coating of 10 nm or more, neither I-CNTs nor II-CNTs are produced, but III-CNTs are the only type of CNTs grown during the whole growth process. During the growth of III-CNTs, the catalyst particles (Ni) stay on the tips of each of the aligned CNTs and act as a 'safety helmet' to protect the CNTs from plasma ion bombardment. On the other hand, it is also the plasma that limits the growth of III-CNTs, since the plasma eventually etches all the catalytic particles out and stops the growth.

  10. Combinatorial atmospheric pressure chemical vapor deposition (cAPCVD): a route to functional property optimization.

    PubMed

    Kafizas, Andreas; Parkin, Ivan P

    2011-12-21

    We demonstrate how combinatorial atmospheric pressure chemical vapor deposition (cAPCVD) can be used as a synthetic tool for rapidly optimizing the functional properties of thin-films, by analyzing the self-cleaning properties of tungsten doped anatase as an example. By introducing reagents at separate points inside the reactor, a tungsten/titanium compositional gradient was formed and a diverse range of film growth conditions were obtained. By partially mixing the metal sources, a combinatorial film with a compositional profile that varied primarily in the lateral plane was synthesized. A combinatorial thin-film of anatase TiO(2) doped with an array of tungsten levels as a solid solution ranging from 0.38-13.8 W/Ti atom % was formed on a single glass substrate. The compositional-functional relationships were understood through comprehensively analyzing combinatorial phase space, with 200 positions investigated by high-throughput methods in this study. Physical and functional properties, and their compositional dependencies, were intercorrelated. It was found that increases in photocatalytic activity and conductivity were most highly dependent on film crystallinity within the 0.38-13.8 atom % W/Ti doping regime. However, enhancements in photoinduced surface wetting were primarily dependent on increases in preferred growth in the (211) crystal plane. PMID:22050427

  11. Desalination by Membrane Distillation using Electrospun Polyamide Fiber Membranes with Surface Fluorination by Chemical Vapor Deposition.

    PubMed

    Guo, Fei; Servi, Amelia; Liu, Andong; Gleason, Karen K; Rutledge, Gregory C

    2015-04-22

    Fibrous membranes of poly(trimethyl hexamethylene terephthalamide) (PA6(3)T) were fabricated by electrospinning and rendered hydrophobic by applying a conformal coating of poly(1H,1H,2H,2H-perfluorodecyl acrylate) (PPFDA) using initiated chemical vapor deposition (iCVD). A set of iCVD-treated electrospun PA6(3)T fiber membranes with fiber diameters ranging from 0.25 to 1.8 μm were tested for desalination using the air gap membrane distillation configuration. Permeate fluxes of 2-11 kg/m2/h were observed for temperature differentials of 20-45 °C between the feed stream and condenser plate, with rejections in excess of 99.98%. The liquid entry pressure was observed to increase dramatically, from 15 to 373 kPa with reduction in fiber diameter. Contrary to expectation, for a given feed temperature the permeate flux was observed to increase for membranes of decreasing fiber diameter. The results for permeate flux and salt rejection show that it is possible to construct membranes for membrane distillation even from intrinsically hydrophilic materials after surface modification by iCVD and that the fiber diameter is shown to play an important role on the membrane distillation performance in terms of permeate flux, salt rejection, and liquid entry pressure. PMID:25835769

  12. Fully porous GaN p-n junction diodes fabricated by chemical vapor deposition.

    PubMed

    Bilousov, Oleksandr V; Carvajal, Joan J; Geaney, Hugh; Zubialevich, Vitaly Z; Parbrook, Peter J; Martínez, Oscar; Jiménez, Juan; Díaz, Francesc; Aguiló, Magdalena; O'Dwyer, Colm

    2014-10-22

    Porous GaN based LEDs produced by corrosion etching techniques demonstrated enhanced light extraction efficiency in the past. However, these fabrication techniques require further postgrown processing steps, which increases the price of the final system. Also, the penetration depth of these etching techniques is limited, and affects not only the semiconductor but also the other elements constituting the LED when applied to the final device. In this paper, we present the fabrication of fully porous GaN p-n junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p-n junction. We characterized their diode behavior from room temperature to 673 K and demonstrated their ability as current rectifiers, thus proving the potential of these fully porous p-n junctions for diode and LEDs applications. The electrical and luminescence characterization confirm that high electronic quality porous structures can be obtained by this method, and we believe this investigation can be extended to other III-N materials for the development of white light LEDs, or to reduce reflection losses and narrowing the output light cone for improved LED external quantum efficiencies.

  13. Photoinitiated chemical vapor deposition of cytocompatible poly(2-hydroxyethyl methacrylate) films.

    PubMed

    McMahon, Brian J; Pfluger, Courtney A; Sun, Bing; Ziemer, Katherine S; Burkey, Daniel D; Carrier, Rebecca L

    2014-07-01

    Poly(2-hydroxyethyl methacrylate) (pHEMA) is a widely utilized biomaterial due to lack of toxicity and suitable mechanical properties; conformal thin pHEMA films produced via chemical vapor deposition (CVD) would thus have broad biomedical applications. Thin films of pHEMA were deposited using photoinitiated CVD (piCVD). Incorporation of ethylene glycol diacrylate (EGDA) into the pHEMA polymer film as a crosslinker, confirmed via Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy, resulted in varied swelling and degradation behavior. 2-Hydroxyethyl methacrylate-only films showed significant thickness loss (up to 40%), possibly due to extraction of low-molecular-weight species or erosion, after 24 h in aqueous solution, whereas films crosslinked with EGDA (9.25-12.4%) were stable for up to 21 days. These results differ significantly from those obtained with plasma-polymerized pHEMA, which degraded steadily over a 21-day period, even with crosslinking. This suggests that the piCVD films differ structurally from those fabricated via plasma polymerization (plasma-enhanced CVD). piCVD pHEMA coatings proved to be good cell culture materials, with Caco-2 cell attachment and viability comparable to results obtained on tissue-culture polystyrene. Thus, thin film CVD pHEMA offers the advantage of enabling conformal coating of a cell culture substrate with tunable properties depending on method of preparation and incorporation of crosslinking agents.

  14. Amorphous Carbon Deposited by a Novel Aerosol-Assisted Chemical Vapor Deposition for Photovoltaic Solar Cells

    NASA Astrophysics Data System (ADS)

    Ahmad, Nurfadzilah; Kamaruzzaman, Dayana; Rusop, Mohamad

    2012-06-01

    Amorphous carbon (a-C) solar cells were successfully prepared using a novel and self-designed aerosol-assisted chemical vapor deposition (AACVD) method using camphor oil as a precursor. The fabricated solar cell with the configuration of Au/p-C/n-Si/Au achieved an efficiency of 0.008% with a fill factor of 0.15 for the device deposited at 0.5 h. The current-voltage (I-V) graph emphasized on the linear graph (ohmic) for the a-C thin films, whereas for the p-n device structure, a rectifying curve was obtained. The rectifying curves signify the heterojunction between the p-type a-C film and the n-Si substrate and designate the generation of electron-hole pair of the samples under illumination. Photoresponse characteristics of the deposited a-C was highlighted when being illuminated (AM 1.5 illumination: 100 mW/cm2, 25 °C). Transmittance spectrum exhibit a large transmittance value (>85%) and absorption coefficient value of 103-104 cm-1 at the visible range of 390 to 790 nm. The atomization of a liquid precursor solution into fine sub-micrometre-sized aerosol droplets in AACVD induced the smooth surface of a-C films. To the best of our knowledge, fabrication of a-C solar cell using this AACVD method has not yet been reported.

  15. Semiconducting Properties of Nanostructured Amorphous Carbon Thin Films Incorporated with Iodine by Thermal Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Kamaruzaman, Dayana; Ahmad, Nurfadzilah; Annuar, Ishak; Rusop, Mohamad

    2013-11-01

    Nanostructured iodine-post doped amorphous carbon (a-C:I) thin films were prepared from camphor oil using a thermal chemical vapor deposition (TCVD) technique at different doping temperatures. The structural properties of the films were studied by field-emission scanning electron microscopy (FESEM), energy-dispersive spectroscopy (EDS), Raman, and Fourier transform infrared (FTIR) studies. FESEM and EDS studies showed successful iodine doping. FTIR and Raman studies showed that the a-C:I thin films consisted of a mixture of sp2- and sp3-bonded carbon atoms. The optical and electrical properties of a-C:I thin films were determined by UV-vis-NIR spectroscopy and current-voltage (I-V) measurement respectively. The optical band gap of a-C thin films decreased upon iodine doping. The highest electrical conductivity was found at 400 °C doping. Heterojunctions are confirmed by rectifying the I-V characteristics of an a-C:I/n-Si junction.

  16. Diamond deposition from fluorinated precursors using microwave-plasma chemical vapor deposition

    SciTech Connect

    Fox, C.A.; McMaster, M.C.; Hsu, W.L.; Kelly, M.A.; Hagstrom, S.B.

    1995-10-16

    Diamond thin films were grown using fluorinated precursors by microwave plasma-assisted chemical vapor deposition. Using CH{sub 4}/H{sub 2}, CH{sub 3}F/H{sub 2}, and CF{sub 4}/H{sub 2} gas mixtures, films were grown at surface temperatures in the range 600--900 {degree}C at constant microwave power, carbon mole fraction, and pressure. Growth activation energies for the CH{sub 4}/H{sub 2}, CH{sub 3}F/H{sub 2}, and CF{sub 4}/H{sub 2} mixtures were 12.6{plus_minus}1.8, 13.7{plus_minus}1.2, and 12.4{plus_minus}1.1 kcal/mole, respectively. Argon ion etching in conjunction with x-ray photoelectron spectroscopy indicated negligible fluorine incorporation into the films. These results are consistent with the hypothesis that diamond is grown from the same intermediates, namely methyl radicals and atomic hydrogen, for all of these mixtures. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  17. High optical quality polycrystalline indium phosphide grown on metal substrates by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zheng, Maxwell; Yu, Zhibin; Joon Seok, Tae; Chen, Yu-Ze; Kapadia, Rehan; Takei, Kuniharu; Aloni, Shaul; Ager, Joel W.; Wu, Ming; Chueh, Yu-Lun; Javey, Ali

    2012-06-01

    III-V semiconductor solar cells have demonstrated the highest power conversion efficiencies to date. However, the cost of III-V solar cells has historically been too high to be practical outside of specialty applications. This stems from the cost of raw materials, need for a lattice-matched substrate for single-crystal growth, and complex epitaxial growth processes. To address these challenges, here, we explore the direct non-epitaxial growth of thin poly-crystalline films of III-Vs on metal substrates by using metalorganic chemical vapor deposition. This method minimizes the amount of raw material used while utilizing a low cost substrate. Specifically, we focus on InP which is known to have a low surface recombination velocity of carriers, thereby, making it an ideal candidate for efficient poly-crystalline cells where surface/interface properties at the grain boundaries are critical. The grown InP films are 1-3 μm thick and are composed of micron-sized grains that generally extend from the surface to the Mo substrate. They exhibit similar photoluminescence peak widths and positions as single-crystalline InP, as well as excellent crystallinity as examined through TEM and XRD analyses. This work presents poly-InP as a promising absorber layer for future photovoltaics.

  18. Ultrathin 2D Photodetectors Utilizing Chemical Vapor Deposition Grown WS2 With Graphene Electrodes.

    PubMed

    Tan, Haijie; Fan, Ye; Zhou, Yingqiu; Chen, Qu; Xu, Wenshuo; Warner, Jamie H

    2016-08-23

    In this report, graphene (Gr) is used as a 2D electrode and monolayer WS2 as the active semiconductor in ultrathin photodetector devices. All of the 2D materials are grown by chemical vapor deposition (CVD) and thus pose as a viable route to scalability. The monolayer thickness of both electrode and semiconductor gives these photodetectors ∼2 nm thickness. We show that graphene is different to conventional metal (Au) electrodes due to the finite density of states from the Dirac cones of the valence and conduction bands, which enables the photoresponsivity to be modulated by electrostatic gating and light input control. We demonstrate lateral Gr-WS2-Gr photodetectors with photoresponsivities reaching 3.5 A/W under illumination power densities of 2.5 × 10(7) mW/cm(2). The performance of monolayer WS2 is compared to bilayer WS2 in photodetectors and we show that increased photoresponsivity is achieved in the thicker bilayer WS2 crystals due to increased optical absorption. This approach of incorporating graphene electrodes in lateral TMD based devices provides insights on the contact engineering in 2D optoelectronics, which is crucial for the development of high performing ultrathin photodetector arrays for versatile applications.

  19. Chemical vapor deposition and etching of high-quality monolayer hexagonal boron nitride films.

    PubMed

    Sutter, Peter; Lahiri, Jayeeta; Albrecht, Peter; Sutter, Eli

    2011-09-27

    The growth of large-area hexagonal boron nitride (h-BN) monolayers on catalytic metal substrates is a topic of scientific and technological interest. We have used real-time microscopy during the growth process to study h-BN chemical vapor deposition (CVD) from borazine on Ru(0001) single crystals and thin films. At low borazine pressures, individual h-BN domains nucleate sparsely, grow to macroscopic dimensions, and coalescence to form a closed monolayer film. A quantitative analysis shows borazine adsorption and dissociation predominantly on Ru, with the h-BN covered areas being at least 100 times less reactive. We establish strong effects of hydrogen added to the CVD precursor gas in controlling the in-plane expansion and morphology of the growing h-BN domains. High-temperature exposure of h-BN/Ru to pure hydrogen causes the controlled edge detachment of B and N and can be used as a clean etching process for h-BN on metals.

  20. Doping of vanadium to nanocrystalline diamond films by hot filament chemical vapor deposition.

    PubMed

    Zhang, Yaozhong; Zhang, Liying; Zhao, Jiang; Wang, Liang; Zhao, Gang; Zhang, Yafei

    2012-01-01

    Doping an impure element with a larger atomic volume into crystalline structure of buck crystals is normally blocked because the rigid crystalline structure could not tolerate a larger distortion. However, this difficulty may be weakened for nanocrystalline structures. Diamonds, as well as many semiconductors, have a difficulty in effective doping. Theoretical calculations carried out by DFT indicate that vanadium (V) is a dopant element for the n-type diamond semiconductor, and their several donor state levels are distributed between the conduction band and middle bandgap position in the V-doped band structure of diamond. Experimental investigation of doping vanadium into nanocrystalline diamond films (NDFs) was first attempted by hot filament chemical vapor deposition technique. Acetone/H2 gas mixtures and vanadium oxytripropoxide (VO(OCH2CH2CH3)3) solutions of acetone with V and C elemental ratios of 1:5,000, 1:2,000, and 1:1,000 were used as carbon and vanadium sources, respectively. The resistivity of the V-doped NDFs decreased two orders with the increasing V/C ratios.

  1. Deposition of nanocrystalline SiC films using helicon wave plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Lu, Wanbing; Yu, Wei; Ma, Luo; Wu, Liping; Fu, Guangsheng

    2008-11-01

    Hydrogenated nanocrystalline SiC films have been deposited by using helicon wave plasma enhanced chemical vapor deposition (HW-PECVD) in H2, SiH4 and CH4 gas mixtures at different RF powers. Their structural and optical properties have been investigated by Fourier transform infrared absorption (FTIR), atomic force microscopy (AFM) and ultraviolet-visible (UV-VIS) transmission spectra. The results indicate that RF power has an important influence on properties of the deposited films. It is found that in a 300 °C low substrate temperature, only amorphous SiC can be deposited at the radio frequency (RF) power of lower than 400 W, while nanocrystalline SiC can be grown at the RF power of equal to or higher than 400 W. The analyses show that the high plasma density of helicon wave plasma source and the high hydrogen dilution condition are two key factors for depositing nanocrystalline SiC films at a low temperature.

  2. Nitrogen doping of chemical vapor deposition grown graphene on 4H-SiC (0001)

    SciTech Connect

    Urban, J. M.; Binder, J.; Wysmołek, A.; Dąbrowski, P.; Strupiński, W.; Kopciuszyński, M.; Jałochowski, M.; Klusek, Z.

    2014-06-21

    We present optical, electrical, and structural properties of nitrogen-doped graphene grown on the Si face of 4H-SiC (0001) by chemical vapor deposition method using propane as the carbon precursor and N{sub 2} as the nitrogen source. The incorporation of nitrogen in the carbon lattice was confirmed by X-ray photoelectron spectroscopy. Angle-resolved photoemission spectroscopy shows carrier behavior characteristic for massless Dirac fermions and confirms the presence of a graphene monolayer in the investigated nitrogen-doped samples. The structural and electronic properties of the material were investigated by Raman spectroscopy. A systematical analysis of the graphene Raman spectra, including D, G, and 2D bands, was performed. In the case of nitrogen-doped samples, an electron concentration on the order of 5–10 × 10{sup 12} cm{sup −2} was estimated based upon Raman and Hall effect measurements and no clear dependence of the carrier concentration on nitrogen concentration used during growth was observed. This high electron concentration can be interpreted as both due to the presence of nitrogen in graphitic-like positions of the graphene lattice as well as to the interaction with the substrate. A greater intensity of the Raman D band and increased inhomogeneity, as well as decreased electron mobility, observed for nitrogen-doped samples, indicate the formation of defects and a modification of the growth process induced by nitrogen doping.

  3. Ultraviolet-light-driven doping modulation in chemical vapor deposition grown graphene.

    PubMed

    Iqbal, M Z; Iqbal, M W; Khan, M F; Eom, Jonghwa

    2015-08-28

    The tuning of charge carrier density of graphene is an essential factor to achieve the integration of high-efficiency electronic and optoelectronic devices. We demonstrate the reversible doping in graphene using deep ultraviolet (UV) irradiation and treatment with O2 and N2 gases. The Dirac point shift towards a positive gate voltage of chemical vapor deposition grown graphene field-effect transistors confirms the p-type doping, which is observed under UV irradiation and treatment with O2 gas, while it restores its pristine state after treatment with N2 gas under UV irradiation. The emergence of an additional peak in the X-ray photoelectron spectra during UV irradiation and treatment with O2 gas represents the oxidation of graphene, and the elimination of this peak during UV irradiation and treatment with N2 gas reveals the restoration of graphene in its pristine state. The shift in the G and 2D bands in Raman spectra towards higher and then lower wavenumber also suggests p-type doping and then reversible doping in graphene. The controlled doping and its reversibility in large area grown graphene offer a new vision for electronic applications.

  4. Cooperative Island Growth of Large Area Single-Crystal Graphene by Chemical Vapor Deposition on Cu

    SciTech Connect

    Regmi, Murari; Rouleau, Christopher; Puretzky, Alexander A; Ivanov, Ilia N; Geohegan, David B; Chen, Jihua; Eastman, Jeffrey; Eres, Gyula

    2014-01-01

    We describe a two-step approach for suppressing nucleation of graphene on Cu using chemical vapor deposition. In the first step, as received Cu foils are oxidized in air at temperatures up to 500 C to remove surface impurities and to induce the regrowth of Cu grains during subsequent annealing in H2 flow at 1040 C prior to graphene growth. In the second step, transient reactant cooling is performed by using a brief Ar pulse at the onset of growth to induce collisional deactivation of the carbon growth species. The combination of these two steps results in a three orders of magnitude reduction in the graphene nucleation density, enabling the growth of millimeter-size single crystal graphene grains. A kinetic model shows that suppressing nucleation promotes a cooperative island growth mode that favors the formation of large area single crystal graphene, and it is accompanied by a roughly 3 orders of magnitude increase in the reactive sticking probability of methane compared to that in random nucleation growth.

  5. Optical emission diagnostics of plasmas in chemical vapor deposition of single-crystal diamond

    SciTech Connect

    Hemawan, Kadek W. Hemley, Russell J.

    2015-11-15

    A key aspect of single crystal diamond growth via microwave plasma chemical vapor deposition is in-process control of the local plasma–substrate environment, that is, plasma gas phase concentrations of activated species at the plasma boundary layer near the substrate surface. Emission spectra of the plasma relative to the diamond substrate inside the microwave plasma reactor chamber have been analyzed via optical emission spectroscopy. The spectra of radical species such as CH, C{sub 2}, and H (Balmer series) important for diamond growth were identified and analyzed. The emission intensities of these electronically excited species were found to be more dependent on operating pressure than on microwave power. Plasma gas temperatures were calculated from measurements of the C{sub 2} Swan band (d{sup 3}Π → a{sup 3}Π transition) system. The plasma gas temperature ranges from 2800 to 3400 K depending on the spatial location of the plasma ball, microwave power and operating pressure. Addition of Ar into CH{sub 4}+H{sub 2} plasma input gas mixture has little influence on the Hα, Hβ, and Hγ intensities and single-crystal diamond growth rates.

  6. Chemical vapor-deposited carbon nanofibers on carbon fabric for supercapacitor electrode applications

    PubMed Central

    2012-01-01

    Entangled carbon nanofibers (CNFs) were synthesized on a flexible carbon fabric (CF) via water-assisted chemical vapor deposition at 800°C at atmospheric pressure utilizing iron (Fe) nanoparticles as catalysts, ethylene (C2H4) as the precursor gas, and argon (Ar) and hydrogen (H2) as the carrier gases. Scanning electron microscopy, transmission electron microscopy, and electron dispersive spectroscopy were employed to characterize the morphology and structure of the CNFs. It has been found that the catalyst (Fe) thickness affected the morphology of the CNFs on the CF, resulting in different capacitive behaviors of the CNF/CF electrodes. Two different Fe thicknesses (5 and 10 nm) were studied. The capacitance behaviors of the CNF/CF electrodes were evaluated by cyclic voltammetry measurements. The highest specific capacitance, approximately 140 F g−1, has been obtained in the electrode grown with the 5-nm thickness of Fe. Samples with both Fe thicknesses showed good cycling performance over 2,000 cycles. PMID:23181897

  7. High Yield Chemical Vapor Deposition Growth of High Quality Large-Area AB Stacked Bilayer Graphene

    PubMed Central

    Liu, Lixin; Zhou, Hailong; Cheng, Rui; Yu, Woo Jong; Liu, Yuan; Chen, Yu; Shaw, Jonathan; Zhong, Xing; Huang, Yu; Duan, Xiangfeng

    2012-01-01

    Bernal stacked (AB stacked) bilayer graphene is of significant interest for functional electronic and photonic devices due to the feasibility to continuously tune its band gap with a vertical electrical field. Mechanical exfoliation can be used to produce AB stacked bilayer graphene flakes but typically with the sizes limited to a few micrometers. Chemical vapor deposition (CVD) has been recently explored for the synthesis of bilayer graphene but usually with limited coverage and a mixture of AB and randomly stacked structures. Herein we report a rational approach to produce large-area high quality AB stacked bilayer graphene. We show that the self-limiting effect of graphene growth on Cu foil can be broken by using a high H2/CH4 ratio in a low pressure CVD process to enable the continued growth of bilayer graphene. A high temperature and low pressure nucleation step is found to be critical for the formation of bilayer graphene nuclei with high AB stacking ratio. A rational design of a two-step CVD process is developed for the growth of bilayer graphene with high AB stacking ratio (up to 90 %) and high coverage (up to 99 %). The electrical transport studies demonstrated that devices made of the as-grown bilayer graphene exhibit typical characteristics of AB stacked bilayer graphene with the highest carrier mobility exceeding 4,000 cm2/V·s at room temperature, comparable to that of the exfoliated bilayer graphene. PMID:22906199

  8. Hierarchical chrysanthemum-flower-like carbon nanomaterials grown by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Ding, Er-Xiong; Geng, Hong-Zhang; Wang, Jing; Luo, Zhi-Jia; Li, Guangfen; Wang, Wen-Yi; Li, Lin-Ge; Yang, Hai-Jie; Da, Shi-Xun; Wang, Jie; Jiang, Hua; Kauppinen, Esko I.

    2016-02-01

    Novel hierarchical chrysanthemum-flower-like carbon nanomaterials (CFL-CNMs) were synthesized by thermal chemical vapor deposition based on acetylene decomposition. A scanning electron microscope and a transmission electron microscope were employed to observe the morphology and structure of the unconventional nanostructures. It is found that the CFL-CNMs look like a blooming chrysanthemum with a stem rather than a spherical flower. The carbon flower has an average diameter of 5 μm, an average stem diameter of 150 nm, branch diameters ranging from 20 to 70 nm, and branch lengths ranging from 0.5 to 3 μm. The morphologies of the CFL-CNMs are unlike any of those previously reported. Fishbone-like carbon nanofibers with a spindle-shaped catalyst locating at the tip can also be found. Furthermore, the catalyst split was proposed to elucidate the formation mechanism of CFL-CNMs. A large and glomerate catalyst particle at the tip of the carbon nanofiber splits into smaller catalyst particles which are catalytic-active points for branch formation, resulting in the formation of CFL-CNMs.

  9. Hierarchical chrysanthemum-flower-like carbon nanomaterials grown by chemical vapor deposition.

    PubMed

    Ding, Er-Xiong; Geng, Hong-Zhang; Wang, Jing; Luo, Zhi-Jia; Li, Guangfen; Wang, Wen-Yi; Li, Lin-Ge; Yang, Hai-Jie; Da, Shi-Xun; Wang, Jie; Jiang, Hua; Kauppinen, Esko I

    2016-02-26

    Novel hierarchical chrysanthemum-flower-like carbon nanomaterials (CFL-CNMs) were synthesized by thermal chemical vapor deposition based on acetylene decomposition. A scanning electron microscope and a transmission electron microscope were employed to observe the morphology and structure of the unconventional nanostructures. It is found that the CFL-CNMs look like a blooming chrysanthemum with a stem rather than a spherical flower. The carbon flower has an average diameter of 5 μm, an average stem diameter of 150 nm, branch diameters ranging from 20 to 70 nm, and branch lengths ranging from 0.5 to 3 μm. The morphologies of the CFL-CNMs are unlike any of those previously reported. Fishbone-like carbon nanofibers with a spindle-shaped catalyst locating at the tip can also be found. Furthermore, the catalyst split was proposed to elucidate the formation mechanism of CFL-CNMs. A large and glomerate catalyst particle at the tip of the carbon nanofiber splits into smaller catalyst particles which are catalytic-active points for branch formation, resulting in the formation of CFL-CNMs. PMID:26808687

  10. Photoluminescence characterization of Nd-doped GaP grown by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Takahei, Kenichiro; Nakagome, Hiroshi

    1992-10-01

    Nd-doped GaP is grown by metalorganic chemical vapor deposition and characterized by photoluminescence measurements. The liquid-helium-temperature luminescence spectra due to Nd intra-4f-shell transitions depend on the growth conditions of the crystals. Some crystals show only a small number of luminescence lines, while some other crystals show many luminescence lines, indicating the presence of many kinds of Nd light emitting centers. Intensities of some luminescence lines begin to decrease at about 50 K and they are below the detection limit at 100 K. However, thermal quenching of some other luminescence lines begins at higher temperatures and their luminescence can be observed up to room temperature. A study on photoexcitation with above- and below-band gap energy photons reveals that some Nd centers can be excited even by below-band gap energy photons, indicating the role of mid-gap levels, in the excitation mechanism, related to the Nd centers. A further comparative study of luminescence characteristics on GaP and GaAs doped with Nd shows that the experimental evidence is consistent with the excitation mechanism proposed for intra-4f-shell luminescence of Yb in InP, where the rare earth 4f shells are excited by way of electron-hole recombination at rare-earth-related trap levels with successive energy transfer.

  11. Advances in silicon carbide Chemical Vapor Deposition (CVD) for semiconductor device fabrication

    NASA Technical Reports Server (NTRS)

    Powell, J. Anthony; Petit, Jeremy B.; Matus, Lawrence G.

    1991-01-01

    Improved SiC chemical vapor deposition films of both 3C and 6H polytypes were grown on vicinal (0001) 6H-SiC wafers cut from single-crystal boules. These films were produced from silane and propane in hydrogen at one atmosphere at a temperature of 1725 K. Among the more important factors which affected the structure and morphology of the grown films were the tilt angle of the substrate, the polarity of the growth surface, and the pregrowth surface treatment of the substrate. With proper pregrowth surface treatment, 6H films were grown on 6H substrates with tilt angles as small as 0.1 degrees. In addition, 3C could be induced to grow within selected regions on a 6H substrate. The polarity of the substrate was a large factor in the incorporation of dopants during epitaxial growth. A new growth model is discussed which explains the control of SiC polytype in epitaxial growth on vicinal (0001) SiC substrates.

  12. Growth temperature dependence of partially Fe filled MWCNT using chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Sengupta, Joydip; Jacob, Chacko

    2009-12-01

    This investigation deals with the effect of growth temperature on the growth behavior of Fe filled multi-walled carbon nanotubes (MWCNTs). Carbon nanotube (CNT) synthesis was carried out in a thermal chemical vapor deposition (CVD) reactor in the temperature range 650-950 °C using propane as the carbon source, Fe as the catalyst material, and Si as the catalyst support. Atomic force microscopy (AFM) analysis of the catalyst exhibits that at elevated temperature clusters of catalyst coalesce and form macroscopic islands. Field emission scanning electron microscopy (FESEM) results show that with increased growth temperature the average diameter of the nanotubes increases but their density decreases. High-resolution transmission electron microscopy (HRTEM) studies suggest that the nanotubes have multi-walled structure with partial Fe filling for all growth temperatures. The X-ray diffraction (XRD) pattern of the grown materials indicates that they are graphitic in nature. The characterization of nanotubes by Raman spectroscopy reveals that the optimized growth temperature for Fe filled CNTs is 850 °C, in terms of quality. A simple model for the growth of Fe filled carbon nanotubes is proposed.

  13. Aspects of nitrogen surface chemistry relevant to TiN chemical vapor deposition

    SciTech Connect

    Schulberg, M.T.; Allendorf, M.D.; Outka, D.A.

    1996-08-01

    NH{sub 3} is an important component of many chemical vapor deposition (CVD) processes for TiN films, which are used for diffusion barriers and other applications in microelectronic circuits. In this study, the interaction of NH{sub 3} with TiN surfaces is examined with temperature programmed desorption (TPD) and Auger electron spectroscopy. NH{sub 3} has two adsorption states on TiN: a chemisorbed state and a multilayer state. A new method for analyzing TPD spectra in systems with slow pumping speeds yields activation energies for desorption for the two states of 24 kcal/mol and 7.3 kcal/mol, respectively. The sticking probability into the chemisorption state is {approximately}0.06. These results are discussed in the context of TiN CVD. In addition, the high temperature stability of TiN is investigated. TiN decomposes to its elements only after heating to 1300 K, showing that decomposition is unlikely to occur under CVD conditions.

  14. The organometallic chemical vapor deposition of transition metal carbides: The use of homoleptic alkyls

    SciTech Connect

    Healy, M.D.; Smith, D.C.; Springer, R.W.; Rubiano, R.R.; Springer, R.W.; Parmeter, J.E.

    1993-12-31

    The organometallic chemical vapor deposition of transition metal carbides (M = Ti, Zr, Hf, and Cr) from tetraneopentyl-metal precursors has been carried out. Metal carbides can be deposited on Si, Al{sub 2}O{sub 3}, and stainless steel substrates from M[CH{sub 2}C(CH{sub 3}){sub 3}]{sub 4} at temperatures in the range of 300 to 750 C and pressures from 10{sup {minus}2} to 10{sup {minus}4} Torr. Thin films have also been grown using a carrier gas (Ar, H{sub 2}). The effects of variation of the metal center, deposition conditions, and reactor design on the resulting material have been examined by SEM, XPS, XRD, ERD and AES. Hydrocarbon fragments generated in the deposition chamber have been studied in by in-situ mass spectrometry. Complementary studies examining the UHV surface decomposition of Zr[CH{sub 2}C(CH{sub 3}){sub 3}]{sub 4} have allowed for a better understanding of the mechanism leading to film growth.

  15. Ultralight boron nitride aerogels via template-assisted chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Song, Yangxi; Li, Bin; Yang, Siwei; Ding, Guqiao; Zhang, Changrui; Xie, Xiaoming

    2015-05-01

    Boron nitride (BN) aerogels are porous materials with a continuous three-dimensional network structure. They are attracting increasing attention for a wide range of applications. Here, we report the template-assisted synthesis of BN aerogels by catalyst-free, low-pressure chemical vapor deposition on graphene-carbon nanotube composite aerogels using borazine as the B and N sources with a relatively low temperature of 900 °C. The three-dimensional structure of the BN aerogels was achieved through the structural design of carbon aerogel templates. The BN aerogels have an ultrahigh specific surface area, ultralow density, excellent oil absorbing ability, and high temperature oxidation resistance. The specific surface area of BN aerogels can reach up to 1051 m2 g-1, 2-3 times larger than the reported BN aerogels. The mass density can be as low as 0.6 mg cm-3, much lower than that of air. The BN aerogels exhibit high hydrophobic properties and can absorb up to 160 times their weight in oil. This is much higher than porous BN nanosheets reported previously. The BN aerogels can be restored for reuse after oil absorption simply by burning them in air. This is because of their high temperature oxidation resistance and suggests broad utility as water treatment tools.

  16. Synthesis of high performance ceramic fibers by chemical vapor deposition for advanced metallics reinforcing

    NASA Technical Reports Server (NTRS)

    Revankar, Vithal; Hlavacek, Vladimir

    1991-01-01

    The chemical vapor deposition (CVD) synthesis of fibers capable of effectively reinforcing intermetallic matrices at elevated temperatures which can be used for potential applications in high temperature composite materials is described. This process was used due to its advantage over other fiber synthesis processes. It is extremely important to produce these fibers with good reproducible and controlled growth rates. However, the complex interplay of mass and energy transfer, blended with the fluid dynamics makes this a formidable task. The design and development of CVD reactor assembly and system to synthesize TiB2, CrB, B4C, and TiC fibers was performed. Residual thermal analysis for estimating stresses arising form thermal expansion mismatch were determined. Various techniques to improve the mechanical properties were also performed. Various techniques for improving the fiber properties were elaborated. The crystal structure and its orientation for TiB2 fiber is discussed. An overall view of the CVD process to develop CrB2, TiB2, and other high performance ceramic fibers is presented.

  17. Anomalously high thermal conductivity of amorphous Si deposited by hot-wire chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Yang, Ho-Soon; Cahill, David G.; Liu, X.; Feldman, J. L.; Crandall, R. S.; Sperling, B. A.; Abelson, J. R.

    2010-03-01

    The thermal conductivities of thin films of amorphous Si (a-Si) deposited by hot-wire chemical vapor deposition (HWCVD) are measured by time-domain thermoreflectance (TDTR). Amorphous Si samples prepared at the National Renewable Energy Laboratory (NREL) show an anomalous enhancement in thermal conductivity compared to other forms of a-Si and compared to the prediction of the model of the minimum thermal conductivity. The thermal conductivity of the NREL HWCVD a-Si samples also decreases with increasing frequency of the temperature fields used in the experiment. This frequency dependence of the thermal conductivity is nearly identical to the results of our previous studies of crystalline semiconductor alloys; a comparison of the frequency dependence to a phonon-scattering model suggests that Rayleigh-type scattering controls the mean-free path of ˜5meV phonons in this material. Amorphous Si films prepared at University of Illinois (U. Illinois) do not show an enhanced thermal conductivity even though Raman vibrational spectra of the U. Illinois and NREL samples are nearly identical. Thus, the thermal conductivity of a-Si depends on details of the microstructure that are not revealed by vibrational spectroscopy and measurements by TDTR provide a convenient method of identifying novel microstructures in amorphous materials.

  18. Synthesis of vertically aligned carbon nanofibers-carbon nanowalls by plasma-enhanced chemical vapor deposition.

    PubMed

    Okamoto, Atsuto; Tanaka, Kei; Yoshimura, Masamichi; Ueda, Kazuyuki; Ghosh, Pradip; Tanemura, Masaki

    2013-03-01

    Vertically aligned carbon nanofibers (VA-CNFs)-carbon nanowalls (CNWs) have been prepared on a silicon (Si) substrate by plasma-enhanced chemical vapor deposition. The VA-CNFs-CNWs were formed at bias voltage of - 185 V, whereas conventional VA-CNFs were synthesized under conditions of high bias voltages. Degenerated CNWs with turbostratic graphite structure were created on amorphous carbon layer around CNFs like a flag attached to a pole, which is evidenced by scanning electron microscopy, transmission electron microscopy, electron diffraction, and micro-Raman spectroscopy. Electron field emission characteristics of VA-CNFs-CNWs with unique microstructure, fabricated on the Si substrate, were primarily investigated. As a result, the VA-CNFs-CNWs showed the turn-on and the threshold fields of 1.7 V x microm(-1) and 3.35 V x microm(-1) with current densities of 10 nA x cm(-2) and 1 microA x cm(-2), respectively. The field enhancement factor beta was estimated to be 1059 by using Fowler-Nordheim theory. PMID:23755628

  19. Extreme ultraviolet single-crystal diamond detectors by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Balducci, A.; Marinelli, Marco; Milani, E.; Morgada, M. E.; Tucciarone, A.; Verona-Rinati, G.; Angelone, M.; Pillon, M.

    2005-05-01

    High-quality single-crystal diamond films, homoepitaxially grown by microwave chemical vapor deposition, have been used to produce diamond-based photodetectors. Such devices were tested over a very wide spectral range, from the extreme ultraviolet (UV) (20 nm) up to the near IR region (2400 nm). An optical parametric oscillator tunable laser was used to investigate the 210-2400 nm spectral range in pulse mode. In this region, the spectral response shows a UV to visible contrast of about 6 orders of magnitude. A time response shorter than 5 ns, i.e., the laser pulse duration, was observed. By integrating the pulse shape, a minor slow component was evidenced, which can be explained in terms of trapping-detrapping effects. Extreme UV gas sources and a toroidal grating vacuum monochromator were used to measure the device response down to 20 nm in continuous mode. In particular, the extreme UV He spectrum was measured and the He II m, 30.4 nmand He I 58.4 nm emission lines were clearly detected. The measured time response of 0.2 s is totally due to the instrumental readout time constants. In both experimental setups an extremely good stability and reproducibility of the device response were obtained, whereas no persistent photoconductivity nor undesirable pumping effects were observed.

  20. Synthesis of Graphene Films on Copper Foils by Chemical Vapor Deposition.

    PubMed

    Li, Xuesong; Colombo, Luigi; Ruoff, Rodney S

    2016-08-01

    Over the past decade, graphene has advanced rapidly as one of the most promising materials changing human life. Development of production-worthy synthetic methodologies for the preparation of various types of graphene forms the basis for its investigation and applications. Graphene can be used in the forms of either microflake powders or large-area thin films. Graphene powders are prepared by the exfoliation of graphite or the reduction of graphene oxide, while graphene films are prepared predominantly by chemical vapor deposition (CVD) on a variety of substrates. Both metal and dielectric substrates have been explored; while dielectric substrates are preferred over any other substrate, much higher quality graphene large-area films have been grown on metal substrates such as Cu. The focus here is on the progress of graphene synthesis on Cu foils by CVD, including various CVD techniques, graphene growth mechanisms and kinetics, strategies for synthesizing large-area graphene single crystals, graphene transfer techniques, and, finally, challenges and prospects are discussed. PMID:26991960

  1. Preparation and structure of porous dielectrics by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Gates, S. M.; Neumayer, D. A.; Sherwood, M. H.; Grill, A.; Wang, X.; Sankarapandian, M.

    2007-05-01

    The preparation of ultralow dielectric constant porous silicon, carbon, oxygen, hydrogen alloy dielectrics, called "pSiCOH," using a production 200mm plasma enhanced chemical vapor deposition tool and a thermal treatment is reported here. The effect of deposition temperature on the pSiCOH film is examined using Fourier transform infrared (FTIR) spectroscopy, dielectric constant (k), and film shrinkage measurements. For all deposition temperatures, carbon in the final porous film is shown to be predominantly Si -CH3 species, and lower k is shown to correlate with increased concentration of Si -CH3. NMR and FTIR spectroscopies clearly detect the loss of a removable, unstable, hydrocarbon (CHx) phase during the thermal treatment. Also detected are increased cross-linking of the Si-O skeleton, and concentration changes for three distinct structures of carbon. In the as deposited films, deposition temperature also affects the hydrocarbon (CHx) content and the presence of C O and C C functional groups.

  2. Ultraprecision grinding of chemical vapor deposited silicon carbide mirrors for synchrotron radiation

    NASA Astrophysics Data System (ADS)

    Namba, Yoshiharu

    1996-11-01

    Chemically vapor deposited silicon carbide (CVD-SiC) is the most important material of mirrors for high-brightness synchrotron radiation beamlines, though the material is too difficult to be machined. It takes quite a long time to polish SiC substrate to make mirrors. This paper intends to reduce the machining time to make CVD-SiC mirrors by using ultra-precision grinding technology. The CVD-SiC sample has been ground into 0.4 nm rms in surface roughness by a resinoid-bonded diamond wheel and an ultra-precision surface grinder having a glass-ceramic spindle of extremely-low thermal expansion. The surface roughness of ground samples were measured with TOPO-3D and AFM. 88.7% reflectivity has been obtained on the ground CVD-SiC flat surface, measured with X-ray of 0.834 nm in wavelength at the grazing incidence angle of 0.7 - 0.95 degree. The reflectivity depends upon the angle between the direction of incident beam and grinding marks on the sample. The relationship between the surface roughness and grinding conditions was also discussed.

  3. Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Nouhi, Akbar (Inventor); Stirn, Richard J. (Inventor)

    1988-01-01

    A method for preparation of a dilute magnetic semiconductor (DMS) film is provided, in which a Group II metal source, a Group VI metal source and a transition metal magnetic ion source are pyrolyzed in the reactor of a metalorganic chemical vapor deposition (MOCVD) system by contact with a heated substrate. As an example, the preparation of films of Cd(sub 1-x)Mn(sub x)Te, in which 0 is less than or equal to x less than or equal to 0.7, on suitable substrates (e.g., GaAs) is described. As a source of manganese, tricarbonyl (methylcyclopentadienyl) manganese (TCPMn) is employed. To prevent TCPMn condensation during its introduction into the reactor, the gas lines, valves and reactor tubes are heated. A thin-film solar cell of n-i-p structure, in which the i-type layer comprises a DMS, is also described; the i-type layer is suitably prepared by MOCVD.

  4. Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Foronda, Humberto M.; Laurent, Matthew A.; Yonkee, Benjanim; Keller, Stacia; DenBaars, Steven P.; Speck, James S.

    2016-08-01

    Parasitic pre-reactions are known to play a role in the growth of aluminum nitride (AlN) via metal organic chemical vapor deposition, where they can deplete precursor molecules before reaching the substrate, leading to poor growth efficiency. Studies have shown that reducing the growth pressure and growth temperature results in improved growth efficiency of AlN; however, superior crystal quality and reduced impurity incorporation are generally best obtained when growing at high temperatures. This study shows that, with proper alkyl source dilution, parasitic pre-reactions can be suppressed while maintaining high growth temperatures. The results show an 18× increase in growth rate and efficiency of AlN films: from 0.04 μm h-1 to 0.73 μm h-1, and 26 μm mol-1 to 502 μm mol-1, respectively; under constant TMAl flow and a small change in total gas flow. This results in 6.8% of Al atoms from the injected TMAl being utilized for AlN layer growth for this reactor configuration. This is better than the standard GaN growth, where 6.0% of the Ga atoms injected from TMGa are utilized for GaN growth.

  5. Atmospheric Pressure Spray Chemical Vapor Deposited CuInS2 Thin Films for Photovoltaic Applications

    NASA Technical Reports Server (NTRS)

    Harris, J. D.; Raffaelle, R. P.; Banger, K. K.; Smith, M. A.; Scheiman, D. A.; Hepp, A. F.

    2002-01-01

    Solar cells have been prepared using atmospheric pressure spray chemical vapor deposited CuInS2 absorbers. The CuInS2 films were deposited at 390 C using the single source precursor (PPh3)2CuIn(SEt)4 in an argon atmosphere. The absorber ranges in thickness from 0.75 - 1.0 micrometers, and exhibits a crystallographic gradient, with the leading edge having a (220) preferred orientation and the trailing edge having a (112) orientation. Schottky diodes prepared by thermal evaporation of aluminum contacts on to the CuInS2 yielded diodes for films that were annealed at 600 C. Solar cells were prepared using annealed films and had the (top down) composition of Al/ZnO/CdS/CuInS2/Mo/Glass. The Jsc, Voc, FF and (eta) were 6.46 mA per square centimeter, 307 mV, 24% and 0.35%, respectively for the best small area cells under simulated AM0 illumination.

  6. Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Cao, Helin; Venkatasubramanian, Rama; Liu, Chang; Pierce, Jonathan; Yang, Haoran; Zahid Hasan, M.; Wu, Yue; Chen, Yong P.

    2012-10-01

    Topological insulator (TI) materials such as Bi2Te3 and Bi2Se3 have attracted strong recent interests. Large scale, high quality TI thin films are important for developing TI-based device applications. In this work, structural and electronic properties of Bi2Te3 thin films deposited by metal organic chemical vapor deposition (MOCVD) on GaAs (001) substrates were characterized via x-ray diffraction (XRD), Raman spectroscopy, angle-resolved photoemission spectroscopy (ARPES), and electronic transport measurements. The characteristic topological surface states with a single Dirac cone have been clearly revealed in the electronic band structure measured by ARPES, confirming the TI nature of the MOCVD Bi2Te3 films. Resistivity and Hall effect measurements have demonstrated relatively high bulk carrier mobility of ˜350 cm2/Vs at 300 K and ˜7400 cm2/Vs at 15 K. We have also measured the Seebeck coefficient of the films. Our demonstration of high quality topological insulator films grown by a simple and scalable method is of interests for both fundamental research and practical applications of thermoelectric and TI materials.

  7. Chemical vapor deposition graphene transfer process to a polymeric substrate assisted by a spin coater

    NASA Astrophysics Data System (ADS)

    Kessler, Felipe; da Rocha, Caique O. C.; Medeiros, Gabriela S.; Fechine, Guilhermino J. M.

    2016-03-01

    A new method to transfer chemical vapor deposition graphene to polymeric substrates is demonstrated here, it is called direct dry transfer assisted by a spin coater (DDT-SC). Compared to the conventional method DDT, the improvement of the contact between graphene-polymer due to a very thin polymeric film deposited by spin coater before the transfer process prevented air bubbles and/or moisture and avoided molecular expansion on the graphene-polymer interface. An acrylonitrile-butadiene-styrene copolymer, a high impact polystyrene, polybutadiene adipate-co-terephthalate, polylactide acid, and a styrene-butadiene-styrene copolymer are the polymers used for the transfers since they did not work very well by using the DDT process. Raman spectroscopy and optical microscopy were used to identify, to quantify, and to qualify graphene transferred to the polymer substrates. The quantity of graphene transferred was substantially increased for all polymers by using the DDT-SC method when compared with the DDT standard method. After the transfer, the intensity of the D band remained low, indicating low defect density and good quality of the transfer. The DDT-SC transfer process expands the number of graphene applications since the polymer substrate candidates are increased.

  8. Effect of transition metal salts on the initiated chemical vapor deposition of polymer thin films

    SciTech Connect

    Kwong, Philip; Seidel, Scott; Gupta, Malancha

    2015-05-15

    In this work, the effect of transition metal salts on the initiated chemical vapor deposition of polymer thin films was studied using x-ray photoelectron spectroscopy. The polymerizations of 4-vinyl pyridine and 1H,1H,2H,2H-perfluorodecyl acrylate were studied using copper(II) chloride (CuCl{sub 2}) and iron(III) chloride (FeCl{sub 3}) as the transition metal salts. It was found that the surface coverages of both poly(4-vinyl pyridine) (P4VP) and poly(1H,1H,2H,2H-perfluorodecyl acrylate) were decreased on CuCl{sub 2}, while the surface coverage of only P4VP was decreased on FeCl{sub 3}. The decreased polymer surface coverage was found to be due to quenching of the propagating radicals by the salt, which led to a reduction of the oxidation state of the metal. The identification of this reaction mechanism allowed for tuning of the effectiveness of the salts to decrease the polymer surface coverage through the adjustment of processing parameters such as the filament temperature. Additionally, it was demonstrated that the ability of transition metal salts to decrease the polymer surface coverage could be extended to the fabrication of patterned cross-linked coatings, which is important for many practical applications such as sensors and microelectronics.

  9. Controlled growth of high-quality graphene using hot-filament chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Selvakumar, N.; Vadivel, B.; Rao, D. V. Sridhara; Krupanidhi, S. B.; Barshilia, Harish C.

    2016-11-01

    High-quality graphene was grown on polycrystalline copper (Cu) foils (1 cm × 1 cm) using hot-filament chemical vapor deposition method. The role of process parameters such as gas flow rates (methane and hydrogen), growth temperatures (filament and substrate) and durations on the growth of graphene was studied. The process parameters were also optimized to grow monolayer, bilayer and multilayer graphene in a controlled manner, and a growth mechanism was deduced from the experimental results. The presence of graphene on Cu foils was confirmed using X-ray photoelectron spectroscopy, micro-Raman spectroscopy, field-emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) techniques. FESEM micrographs clearly showed that the graphene starts nucleating as hexagonal islands and later evolves as dendritic lobe-shaped islands with an increase in supersaturation. The TEM images substantiate the growth of monolayer, bilayer and multilayer graphene. The I 2D/ I G ratio = 2 confirmed the presence of the monolayer graphene and the absence of `D' peak in the Raman spectrum indicated the high purity of graphene grown on Cu foils. These results also show that the polycrystalline copper foil morphology has negligible effect on the growth of monolayer graphene.

  10. High pressure studies using two-stage diamond micro-anvils grown by chemical vapor deposition

    SciTech Connect

    Vohra, Yogesh K.; Samudrala, Gopi K.; Moore, Samuel L.; Montgomery, Jeffrey M.; Tsoi, Georgiy M.; Velisavljevic, Nenad

    2015-06-10

    Ultra-high static pressures have been achieved in the laboratory using a two-stage micro-ball nanodiamond anvils as well as a two-stage micro-paired diamond anvils machined using a focused ion-beam system. The two-stage diamond anvils’ designs implemented thus far suffer from a limitation of one diamond anvil sliding past another anvil at extreme conditions. We describe a new method of fabricating two-stage diamond micro-anvils using a tungsten mask on a standard diamond anvil followed by microwave plasma chemical vapor deposition (CVD) homoepitaxial diamond growth. A prototype two stage diamond anvil with 300 μm culet and with a CVD diamond second stage of 50 μm in diameter was fabricated. We have carried out preliminary high pressure X-ray diffraction studies on a sample of rare-earth metal lutetium sample with a copper pressure standard to 86 GPa. Furthermore, the micro-anvil grown by CVD remained intact during indentation of gasket as well as on decompression from the highest pressure of 86 GPa.

  11. Chemical vapor deposition and etching of high-quality monolayer hexagonal boron nitride films.

    PubMed

    Sutter, Peter; Lahiri, Jayeeta; Albrecht, Peter; Sutter, Eli

    2011-09-27

    The growth of large-area hexagonal boron nitride (h-BN) monolayers on catalytic metal substrates is a topic of scientific and technological interest. We have used real-time microscopy during the growth process to study h-BN chemical vapor deposition (CVD) from borazine on Ru(0001) single crystals and thin films. At low borazine pressures, individual h-BN domains nucleate sparsely, grow to macroscopic dimensions, and coalescence to form a closed monolayer film. A quantitative analysis shows borazine adsorption and dissociation predominantly on Ru, with the h-BN covered areas being at least 100 times less reactive. We establish strong effects of hydrogen added to the CVD precursor gas in controlling the in-plane expansion and morphology of the growing h-BN domains. High-temperature exposure of h-BN/Ru to pure hydrogen causes the controlled edge detachment of B and N and can be used as a clean etching process for h-BN on metals. PMID:21793550

  12. Low-temperature-grown continuous graphene films from benzene by chemical vapor deposition at ambient pressure

    PubMed Central

    Jang, Jisu; Son, Myungwoo; Chung, Sunki; Kim, Kihyeun; Cho, Chunhum; Lee, Byoung Hun; Ham, Moon-Ho

    2015-01-01

    There is significant interest in synthesizing large-area graphene films at low temperatures by chemical vapor deposition (CVD) for nanoelectronic and flexible device applications. However, to date, low-temperature CVD methods have suffered from lower surface coverage because micro-sized graphene flakes are produced. Here, we demonstrate a modified CVD technique for the production of large-area, continuous monolayer graphene films from benzene on Cu at 100–300 °C at ambient pressure. In this method, we extended the graphene growth step in the absence of residual oxidizing species by introducing pumping and purging cycles prior to growth. This led to continuous monolayer graphene films with full surface coverage and excellent quality, which were comparable to those achieved with high-temperature CVD; for example, the surface coverage, transmittance, and carrier mobilities of the graphene grown at 300 °C were 100%, 97.6%, and 1,900–2,500 cm2 V−1 s−1, respectively. In addition, the growth temperature was substantially reduced to as low as 100 °C, which is the lowest temperature reported to date for pristine graphene produced by CVD. Our modified CVD method is expected to allow the direct growth of graphene in device manufacturing processes for practical applications while keeping underlying devices intact. PMID:26658923

  13. Band structure characterization of WS2 grown by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Tanabe, Iori; Gomez, Michael; Coley, William C.; Le, Duy; Echeverria, Elena M.; Stecklein, Gordon; Kandyba, Viktor; Balijepalli, Santosh K.; Klee, Velveth; Nguyen, Ariana E.; Preciado, Edwin; Lu, I.-Hsi; Bobek, Sarah; Barroso, David; Martinez-Ta, Dominic; Barinov, Alexei; Rahman, Talat S.; Dowben, Peter A.; Crowell, Paul A.; Bartels, Ludwig

    2016-06-01

    Growth by chemical vapor deposition (CVD) leads to multilayer WS2 of very high quality, based on high-resolution angle-resolved photoemission spectroscopy. The experimental valence band electronic structure is considered to be in good agreement with that obtained from density functional theory calculations. We find the spin-orbit splitting at the K ¯ point to be 420 ± 20 meV with a hole effective mass of -0.35 ± 0.02 me for the upper spin-orbit component (the branch closer to the Fermi level) and -0.43 ± 0.07 me for the lower spin-orbit component. As predicted by theory, a thickness-dependent increase of bandwidth is observed at the top of the valence band, in the region of the Brillouin zone center. The top of the valence band of the CVD-prepared films exhibits a substantial binding energy, consistent with n-type behavior, and in agreement with transistor characteristics acquired using devices incorporating the same WS2 material.

  14. Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Li, Dong-ling; Feng, Xiao-fei; Wen, Zhi-yu; Shang, Zheng-guo; She, Yin

    2016-07-01

    Stress controllable silicon nitride (SiNx) films deposited by plasma enhanced chemical vapor deposition (PECVD) are reported. Low stress SiNx films were deposited in both high frequency (HF) mode and dual frequency (HF/LF) mode. By optimizing process parameters, stress free (-0.27 MPa) SiNx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited SiNx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit (IC), micro-electro-mechanical systems (MEMS) and bio-MEMS.

  15. Fabrication of Nanocarbon Composites Using In Situ Chemical Vapor Deposition and Their Applications.

    PubMed

    He, Chunnian; Zhao, Naiqin; Shi, Chunsheng; Liu, Enzuo; Li, Jiajun

    2015-09-23

    Nanocarbon (carbon nanotubes (CNTs) and graphene (GN)) composites attract considerable research interest due to their fascinating applications in many fields. Here, recent developments in the field of in situ chemical vapor deposition (CVD) for the design and controlled preparation of advanced nanocarbon composites are highlighted, specifically, CNT-reinforced bulk structural composites, as well as CNT, GN, and CNT/GN functional composites, together with their practical and potential applications. In situ CVD is a very attractive approach for the fabrication of composites because of its engaging features, such as its simplicity, low-cost, versatility, and tunability. The morphologies, structures, dispersion, and interface of the resulting nanocarbon composites can be easily modulated by varying the experimental parameters (such as temperature, catalysts, carbon sources, templates or template catalysts, etc.), which enables a great potential for the in situ synthesis of high-quality nanocarbons with tailored size and dimension for constructing high-performance composites, which has not yet been achieved by conventional methods. In addition, new trends of the in situ CVD toward nanocarbon composites are discussed.

  16. Differing morphologies of textured diamond films with electrical properties made with microwave plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Lai, Wen Chi; Wu, Yu-Shiang; Chang, Hou-Cheng; Lee, Yuan-Haun

    2010-12-01

    This study investigates the orientation of textured diamond films produced through microwave plasma chemical vapor deposition (MPCVD) at 1200 W, 110 Torr, CH 4/H 2 = 1/20, with depositions times of 0.5-4.0 h. After a growth period of 2.0-4.0 h, this particular morphology revealed a rectangular structure stacked regularly on the diamond film. The orientation on {1 1 1}-textured diamond films grew a preferred orientation of {1 1 0} on the surface, as measured by XRD. The formation of the diamond epitaxial film formed textured octahedrons in ball shaped (or cauliflower-like) diamonds in the early stages (0.5 h), and the surface of the diamond film extended to pile the rectangular structure at 4.0 h. The width of the tier was approximately 200 nm at the 3.0 h point of deposition, according to TEM images. The results revealed that the textured diamond films showed two different morphological structures (typical ball shaped and rectangular diamonds), at different stages of the deposition period. The I- V characteristics of the oriented diamond films after 4.0 h of deposition time showed good conformity with the ohmic contact.

  17. Unraveling the growth of vertically aligned multi-walled carbon nanotubes by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Ramirez, A.; Royo, C.; Latorre, N.; Mallada, R.; Tiggelaar, R. M.; Monzón, A.

    2014-12-01

    The interaction between the main operational variables during the growth of vertically aligned multiwalled carbon nanotubes (VA-MWCNTs) by catalytic chemical vapor deposition is studied. In this contribution, we report the influence of the carbon source (i.e. acetylene, ethylene and propylene), the reaction/activation temperature, the rate of heating, the reaction time, the metal loading, and the metallic nanoparticle size and distribution on the growth and alignment of carbon nanotubes. Fe/Al thin films deposited onto silicon samples by electron-beam evaporation are used as catalyst. A phenomenological growth mechanism is proposed to explain the interaction between these multiple factors. Three different outcomes of the synthesis process are found: i) formation of forests of non-aligned, randomly oriented multi-walled carbon nanotubes, ii) growth of vertically aligned tubes with a thin and homogeneous carbonaceous layer on the top, and iii) formation of vertically aligned carbon nanotubes. This carbonaceous layer (ii) has not been reported before. The main requirements to promote vertically aligned carbon nanotube growth are determined.

  18. Metalorganic chemical vapor deposition of few-layer sp2 bonded boron nitride films

    NASA Astrophysics Data System (ADS)

    Paduano, Qing; Snure, Michael; Weyburne, David; Kiefer, Arnold; Siegel, Gene; Hu, Jianjun

    2016-09-01

    A systematic study of the growth of atomically smooth few-layer sp2 bonded BN on 50 mm sapphire substrates by metalorganic chemical vapor deposition (MOCVD) using Triethylboron (TEB) and NH3 as precursors is described. Based on the experimental results obtained using Raman spectroscopy, atomic force microscopy (AFM), X-ray reflectance measurements and transmission electron microscopy, we explored the growth parameter space and identified three different growth modes: random three-dimensional (3D) growth, a self-terminating few-layer growth mode, and a very slow layer-by-layer mode. The growth mode depends on the temperature, pressure, V/III ratio, and surface nitridation conditions, as follows: 3D island growth is dominant in the low V/III range and is characterized by a decreasing growth rate with increasing deposition temperature. When the V/III ratio is increased this 3D island growth mode transitions to a self-terminating few-layer growth mode. An additional transition from self-terminating growth to 3D growth occurs when the growth pressure is increased. Very slow layer by layer growth is found at high temperature and low pressure. Finally, substrate surface nitridation promotes self-terminating growth that results in atomically smooth films.

  19. What are the active carbon species during graphene chemical vapor deposition growth?

    PubMed

    Shu, Haibo; Tao, Xiao-Ming; Ding, Feng

    2015-02-01

    The dissociation of carbon feedstock is a crucial step for understanding the mechanism of graphene chemical vapor deposition (CVD) growth. Using first-principles calculations, we performed a comprehensive theoretical study for the population of various active carbon species, including carbon monomers and various radicals, CHi (i = 1, 2, 3, 4), on four representative transition-metal surfaces, Cu(111), Ni(111), Ir(111) and Rh(111), under different experimental conditions. On the Cu surface, which is less active, the population of CH and C monomers at the subsurface is found to be very high and thus they are the most important precursors for graphene CVD growth. On the Ni surface, which is more active than Cu, C monomers at the subsurface dominate graphene CVD growth under most experimental conditions. In contrast, on the active Ir and Rh surfaces, C monomers on the surfaces are found to be very stable and thus are the main precursors for graphene growth. This study shows that the mechanism of graphene CVD growth depends on the activity of catalyst surfaces and the detailed graphene growth process at the atomic level can be controlled by varying the temperature or partial pressure of hydrogen.

  20. Raman mapping investigation of chemical vapor deposition-fabricated twisted bilayer graphene with irregular grains.

    PubMed

    Chen, Yuming; Meng, Lijuan; Zhao, Weiwei; Liang, Zheng; Wu, Xing; Nan, Haiyan; Wu, Zhangting; Huang, Shan; Sun, Litao; Wang, Jinlan; Ni, Zhenhua

    2014-10-21

    Bilayer graphene as a prototype of two-dimensional stacked material has recently attracted great attention. The twist angle between graphene layers adds another dimension to control its properties. In this study, we used Raman mapping to investigate the twist angle dependence of properties of twisted bilayer graphene (TBG) with irregular grains that was fabricated by chemical vapor deposition (CVD). Different Raman parameters including intensity, width, and position of G and 2D peaks were used to distinguish TBG with different twist angles. The statistical results from Raman imaging on the distribution of twist angle are consistent with the results from selected area election diffraction (SAED). Finally, the Raman peak at approximately 1347 cm(-1) for TBG with a large twist angle was assigned to the D-like peak, although it has similar excitation energy dependence of frequency as the defect-induced D peak. Theoretical calculation further confirmed that vacancy-like defect is not favored in the formation energy for TBG with a large twist angle as compared to monolayer graphene or TBG with other twist angles. These results will help to advance the understanding of TBG properties, especially for CVD samples with irregular grains.

  1. Selective growth of graphene in layer-by-layer via chemical vapor deposition.

    PubMed

    Park, Jaehyun; An, Hyosub; Choi, Dong-Chul; Hussain, Sajjad; Song, Wooseok; An, Ki-Seok; Lee, Won-Jun; Lee, Naesung; Lee, Wan-Gyu; Jung, Jongwan

    2016-08-14

    Selective and precise control of the layer number of graphene remains a critical issue for the practical applications of graphene. First, it is highly challenging to grow a continuous and uniform few-layer graphene since once the monolayer graphene fully covers a copper (Cu) surface, the growth of the second layer stops, resulting in mostly nonhomogeneous films. Second, from the selective adlayer growth point of view, there is no clear pathway for achieving this. We have developed the selective growth of a graphene adlayer in layer-by-layer via chemical vapor deposition (CVD) which makes it possible to stack graphene on a specific position. The key idea is to deposit a thin Cu layer (∼40 nm thick) on pre-grown monolayer graphene and to apply additional growth. The thin Cu atop the graphene/Cu substrate acts as a catalyst to decompose methane (CH4) gas during the additional growth. The adlayer is grown selectively on the pre-grown graphene, and the thin Cu is removed through evaporation during CVD, eventually forming large-area and uniform double layer graphene. With this technology, highly uniform graphene films with precise thicknesses of 1 to 5 layers and graphene check patterns with 1 to 3 layers were successfully demonstrated. This method provides precise LBL growth for a uniform graphene film and a technique for the design of new graphene devices. PMID:27436358

  2. Low-temperature-grown continuous graphene films from benzene by chemical vapor deposition at ambient pressure

    NASA Astrophysics Data System (ADS)

    Jang, Jisu; Son, Myungwoo; Chung, Sunki; Kim, Kihyeun; Cho, Chunhum; Lee, Byoung Hun; Ham, Moon-Ho

    2015-12-01

    There is significant interest in synthesizing large-area graphene films at low temperatures by chemical vapor deposition (CVD) for nanoelectronic and flexible device applications. However, to date, low-temperature CVD methods have suffered from lower surface coverage because micro-sized graphene flakes are produced. Here, we demonstrate a modified CVD technique for the production of large-area, continuous monolayer graphene films from benzene on Cu at 100-300 °C at ambient pressure. In this method, we extended the graphene growth step in the absence of residual oxidizing species by introducing pumping and purging cycles prior to growth. This led to continuous monolayer graphene films with full surface coverage and excellent quality, which were comparable to those achieved with high-temperature CVD; for example, the surface coverage, transmittance, and carrier mobilities of the graphene grown at 300 °C were 100%, 97.6%, and 1,900-2,500 cm2 V-1 s-1, respectively. In addition, the growth temperature was substantially reduced to as low as 100 °C, which is the lowest temperature reported to date for pristine graphene produced by CVD. Our modified CVD method is expected to allow the direct growth of graphene in device manufacturing processes for practical applications while keeping underlying devices intact.

  3. Static Pressure Above 300 GPa Using Chemical Vapor Deposited Two-stage Diamond Micro-anvils

    NASA Astrophysics Data System (ADS)

    Montgomery, Jeffrey; Samudrala, Gopi; Tsoi, Georgiy; Smith, Spencer; Vohra, Yogesh

    Two-stage diamond micro-anvils were grown via chemical vapor deposition (CVD) on beveled diamond anvils with 30 micron central flats. These anvils were used to compress a pre-indented rhenium foil to pressures in excess of 300 Gigapascals (GPa) at relatively small applied loads. Powder diffraction patterns were collected across the high-pressure region using an x-ray beam collimated to 1x2 microns in a grid with a spacing of 1 micron. While multi-megabar pressures were seen across the entire second stage, the highest pressure regions were confined to areas of a few microns in diameter. These were observed at points near the edge of the second stage with nearby pressure gradients as high as 100 GPa/micron. The transmitted x-rays show that the second stage plastically deformed while maintaining multi-megabar pressures. This may have created a second-stage gasket consisting of CVD diamond and rhenium that supported the pressure gradient without substantial external confining pressure. Further improvements in two-stage diamond micro-anvils would require controlling the geometry and microcrystalline/nanocrystalline diamond content during CVD growth process. This work was supported by the Department of Energy (DOE), National Nuclear Security Administration under Grant Number DE-NA0002014.

  4. Growth of diamond by RF plasma-assisted chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Meyer, Duane E.; Ianno, Natale J.; Woollam, John A.; Swartzlander, A. B.; Nelson, A. J.

    1988-01-01

    A system has been designed and constructed to produce diamond particles by inductively coupled radio-frequency, plasma-assisted chemical vapor deposition. This is a low-pressure, low-temperature process used in an attempt to deposit diamond on substrates of glass, quartz, silicon, nickel, and boron nitride. Several deposition parameters have been varied including substrate temperature, gas concentration, gas pressure, total gas flow rate, RF input power, and deposition time. Analytical methods employed to determine composition and structure of the deposits include scanning electron microscopy, absorption spectroscopy, scanning Auger microprobe spectroscopy, and Raman spectroscopy. Analysis indicates that particles having a thin graphite surface, as well as diamond particles with no surface coatings, have been deposited. Deposits on quartz have exhibited optical bandgaps as high as 4.5 eV. Scanning electron microscopy analysis shows that particles are deposited on a pedestal which Auger spectroscopy indicates to be graphite. This is a phenomenon that has not been previously reported in the literature.

  5. Diamond synthesis at atmospheric pressure by microwave capillary plasma chemical vapor deposition

    SciTech Connect

    Hemawan, Kadek W.; Gou, Huiyang; Hemley, Russell J.

    2015-11-02

    Polycrystalline diamond has been synthesized on silicon substrates at atmospheric pressure, using a microwave capillary plasma chemical vapor deposition technique. The CH{sub 4}/Ar plasma was generated inside of quartz capillary tubes using 2.45 GHz microwave excitation without adding H{sub 2} into the deposition gas chemistry. Electronically excited species of CN, C{sub 2}, Ar, N{sub 2}, CH, H{sub β}, and H{sub α} were observed in the emission spectra. Raman measurements of deposited material indicate the formation of well-crystallized diamond, as evidenced by the sharp T{sub 2g} phonon at 1333 cm{sup −1} peak relative to the Raman features of graphitic carbon. Field emission scanning electron microscopy images reveal that, depending on the growth conditions, the carbon microstructures of grown films exhibit “coral” and “cauliflower-like” morphologies or well-facetted diamond crystals with grain sizes ranging from 100 nm to 10 μm.

  6. Application of Chlorine-Assisted Chemical Vapor Deposition of Diamond at Low Temperatures

    NASA Technical Reports Server (NTRS)

    Pan, Chenyu; Altemir, David A.; Margrave, John L.; Hauge, Robert H.

    1994-01-01

    Low temperature deposition of diamond has been achieved by a chlorine-assisted diamond chemical vapor deposition (CA-CVD) process. This method begins with the thermal dissociation of molecular chlorine into atomic chlorine in a resistively heated graphite furnace at temperatures between 1300 and 1500 deg. C. The atomic chlorine, upon mixing, subsequently reacts with molecular hydrogen and hydrocarbons. The rapid exchange reactions between the atomic chlorine, molecular hydrogen, and hydrocarbons give rise to the atomic hydrogen and carbon precursors required for diamond deposition. Homoepitaxial diamond growth on diamond substrates has been studied over the substrate temperature range of 100-950 C. It was found that the diamond growth rates are approximately 0.2 microns/hr in the temperature range between 102 and 300 C and that the growth rates do not decrease significantly with a decrease in substrate temperature. This is unique because the traditional diamond deposition using H2/CH4 systems usually disappears at substrate temperatures below approx. 500 deg. C. This opens up a possible route to the deposition of diamond on low-melting point materials such as aluminum and its alloys.

  7. TiOx thin films grown on Pd(100) and Pd(111) by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Farstad, M. H.; Ragazzon, D.; Grönbeck, H.; Strømsheim, M. D.; Stavrakas, C.; Gustafson, J.; Sandell, A.; Borg, A.

    2016-07-01

    The growth of ultrathin TiOx (0≤x≤2) films on Pd(100) and Pd(111) surfaces by chemical vapor deposition (CVD), using Titanium(IV)isopropoxide (TTIP) as precursor, has been investigated by high resolution photoelectron spectroscopy, low energy electron diffraction and scanning tunneling microscopy. Three different TiOx phases and one Pd-Ti alloy phase have been identified for both surfaces. The Pd-Ti alloy phase is observed at the initial stages of film growth. Density functional theory (DFT) calculations for Pd(100) and Pd(111) suggest that Ti is alloyed into the second layer of the substrate. Increasing the TTIP dose yields a wetting layer comprising Ti2 + species (TiOx, x ∼0.75). On Pd(100), this phase exhibits a mixture of structures with (3 × 5) and (4 × 5) periodicity with respect to the Pd(100) substrate, while an incommensurate structure is formed on Pd(111). Most importantly, on both surfaces this phase consists of a zigzag pattern similar to observations on other reactive metal surfaces. Further increase in coverage results in growth of a fully oxidized (TiO2) phase on top of the partially oxidized layer. Preliminary investigations indicate that the fully oxidized phase on both Pd(100) and Pd(111) may be the TiO2(B) phase.

  8. Equilibrium chemical vapor deposition growth of Bernal-stacked bilayer graphene.

    PubMed

    Zhao, Pei; Kim, Sungjin; Chen, Xiao; Einarsson, Erik; Wang, Miao; Song, Yenan; Wang, Hongtao; Chiashi, Shohei; Xiang, Rong; Maruyama, Shigeo

    2014-11-25

    Using ethanol as the carbon source, self-limiting growth of AB-stacked bilayer graphene (BLG) has been achieved on Cu via an equilibrium chemical vapor deposition (CVD) process. We found that during this alcohol catalytic CVD (ACCVD) a source-gas pressure range exists to break the self-limitation of monolayer graphene on Cu, and at a certain equilibrium state it prefers to form uniform BLG with a high surface coverage of ∼94% and AB-stacking ratio of nearly 100%. More importantly, once the BLG is completed, this growth shows a self-limiting manner, and an extended ethanol flow time does not result in additional layers. We investigate the mechanism of this equilibrium BLG growth using isotopically labeled (13)C-ethanol and selective surface aryl functionalization, and results reveal that during the equilibrium ACCVD process a continuous substitution of graphene flakes occurs to the as-formed graphene and the BLG growth follows a layer-by-layer epitaxy mechanism. These phenomena are significantly in contrast to those observed for previously reported BLG growth using methane as precursor. PMID:25363605

  9. Chain Assemblies from Nanoparticles Synthesized by Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition: The Computational View.

    PubMed

    Mishin, Maxim V; Zamotin, Kirill Y; Protopopova, Vera S; Alexandrov, Sergey E

    2015-12-01

    This article refers to the computational study of nanoparticle self-organization on the solid-state substrate surface with consideration of the experimental results, when nanoparticles were synthesised during atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD). The experimental study of silicon dioxide nanoparticle synthesis by AP-PECVD demonstrated that all deposit volume consists of tangled chains of nanoparticles. In certain cases, micron-sized fractals are formed from tangled chains due to deposit rearrangement. This work is focused on the study of tangled chain formation only. In order to reveal their formation mechanism, a physico-mathematical model was developed. The suggested model was based on the motion equation solution for charged and neutral nanoparticles in the potential fields with the use of the empirical interaction potentials. In addition, the computational simulation was carried out based on the suggested model. As a result, the influence of such experimental parameters as deposition duration, particle charge, gas flow velocity, and angle of gas flow was found. It was demonstrated that electrical charges carried by nanoparticles from the discharge area are not responsible for the formation of tangled chains from nanoparticles, whereas nanoparticle kinetic energy plays a crucial role in deposit morphology and density. The computational results were consistent with experimental results. PMID:26682441

  10. Characterization of diamond-like nanocomposite thin films grown by plasma enhanced chemical vapor deposition

    SciTech Connect

    Santra, T. S.; Liu, C. H.; Bhattacharyya, T. K.; Patel, P.; Barik, T. K.

    2010-06-15

    Diamond-like nanocomposite (DLN) thin films, comprising the networks of a-C:H and a-Si:O were deposited on pyrex glass or silicon substrate using gas precursors (e.g., hexamethyldisilane, hexamethyldisiloxane, hexamethyldisilazane, or their different combinations) mixed with argon gas, by plasma enhanced chemical vapor deposition technique. Surface morphology of DLN films was analyzed by atomic force microscopy. High-resolution transmission electron microscopic result shows that the films contain nanoparticles within the amorphous structure. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) were used to determine the structural change within the DLN films. The hardness and friction coefficient of the films were measured by nanoindentation and scratch test techniques, respectively. FTIR and XPS studies show the presence of C-C, C-H, Si-C, and Si-H bonds in the a-C:H and a-Si:O networks. Using Raman spectroscopy, we also found that the hardness of the DLN films varies with the intensity ratio I{sub D}/I{sub G}. Finally, we observed that the DLN films has a better performance compared to DLC, when it comes to properties like high hardness, high modulus of elasticity, low surface roughness and low friction coefficient. These characteristics are the critical components in microelectromechanical systems (MEMS) and emerging nanoelectromechanical systems (NEMS).

  11. High pressure studies using two-stage diamond micro-anvils grown by chemical vapor deposition

    DOE PAGESBeta

    Vohra, Yogesh K.; Samudrala, Gopi K.; Moore, Samuel L.; Montgomery, Jeffrey M.; Tsoi, Georgiy M.; Velisavljevic, Nenad

    2015-06-10

    Ultra-high static pressures have been achieved in the laboratory using a two-stage micro-ball nanodiamond anvils as well as a two-stage micro-paired diamond anvils machined using a focused ion-beam system. The two-stage diamond anvils’ designs implemented thus far suffer from a limitation of one diamond anvil sliding past another anvil at extreme conditions. We describe a new method of fabricating two-stage diamond micro-anvils using a tungsten mask on a standard diamond anvil followed by microwave plasma chemical vapor deposition (CVD) homoepitaxial diamond growth. A prototype two stage diamond anvil with 300 μm culet and with a CVD diamond second stage ofmore » 50 μm in diameter was fabricated. We have carried out preliminary high pressure X-ray diffraction studies on a sample of rare-earth metal lutetium sample with a copper pressure standard to 86 GPa. Furthermore, the micro-anvil grown by CVD remained intact during indentation of gasket as well as on decompression from the highest pressure of 86 GPa.« less

  12. Modeling of Sheath Ion-Molecule Reactions in Plasma Enhanced Chemical Vapor Deposition of Carbon Nanotubes

    NASA Technical Reports Server (NTRS)

    Hash, David B.; Govindan, T. R.; Meyyappan, M.

    2004-01-01

    In many plasma simulations, ion-molecule reactions are modeled using ion energy independent reaction rate coefficients that are taken from low temperature selected-ion flow tube experiments. Only exothermic or nearly thermoneutral reactions are considered. This is appropriate for plasma applications such as high-density plasma sources in which sheaths are collisionless and ion temperatures 111 the bulk p!asma do not deviate significantly from the gas temperature. However, for applications at high pressure and large sheath voltages, this assumption does not hold as the sheaths are collisional and ions gain significant energy in the sheaths from Joule heating. Ion temperatures and thus reaction rates vary significantly across the discharge, and endothermic reactions become important in the sheaths. One such application is plasma enhanced chemical vapor deposition of carbon nanotubes in which dc discharges are struck at pressures between 1-20 Torr with applied voltages in the range of 500-700 V. The present work investigates The importance of the inclusion of ion energy dependent ion-molecule reaction rates and the role of collision induced dissociation in generating radicals from the feedstock used in carbon nanotube growth.

  13. Band gap engineering of chemical vapor deposited graphene by in situ BN doping.

    PubMed

    Chang, Cheng-Kai; Kataria, Satender; Kuo, Chun-Chiang; Ganguly, Abhijit; Wang, Bo-Yao; Hwang, Jeong-Yuan; Huang, Kay-Jay; Yang, Wei-Hsun; Wang, Sheng-Bo; Chuang, Cheng-Hao; Chen, Mi; Huang, Ching-I; Pong, Way-Faung; Song, Ker-Jar; Chang, Shoou-Jinn; Guo, Jing-Hua; Tai, Yian; Tsujimoto, Masahiko; Isoda, Seiji; Chen, Chun-Wei; Chen, Li-Chyong; Chen, Kuei-Hsien

    2013-02-26

    Band gap opening and engineering is one of the high priority goals in the development of graphene electronics. Here, we report on the opening and scaling of band gap in BN doped graphene (BNG) films grown by low-pressure chemical vapor deposition method. High resolution transmission electron microscopy is employed to resolve the graphene and h-BN domain formation in great detail. X-ray photoelectron, micro-Raman, and UV-vis spectroscopy studies revealed a distinct structural and phase evolution in BNG films at low BN concentration. Synchrotron radiation based XAS-XES measurements concluded a gap opening in BNG films, which is also confirmed by field effect transistor measurements. For the first time, a significant band gap as high as 600 meV is observed for low BN concentrations and is attributed to the opening of the π-π* band gap of graphene due to isoelectronic BN doping. As-grown films exhibit structural evolution from homogeneously dispersed small BN clusters to large sized BN domains with embedded diminutive graphene domains. The evolution is described in terms of competitive growth among h-BN and graphene domains with increasing BN concentration. The present results pave way for the development of band gap engineered BN doped graphene-based devices.

  14. Thermal chemical vapor deposition (T-CVD) growth of carbon nanotubes on different metallic underlayers

    NASA Astrophysics Data System (ADS)

    Kim, S. M.; Gangloff, L.

    2011-06-01

    The synthesis of carbon nanotubes (CNTs) on various substrates by thermal chemical vapor deposition (T-CVD) (500-800 °C) is described. C 2H 2 (98% purity) is used as the carbon feedstock and the metallic underlayers, i.e., AlCu, Cu, Ag, Ta, and NiV are used. A crucial component is the insertion (or inclusion) of an Al layer between the metal and the catalyst, which then leads to the effective growth of CNTs. The types of CNTs (single or multi walled) could be dependent on the diameter of Al xO y nanoparticles that are formed during the annealing process. In situ mass spectroscopy reveals that the increase in CO 2 and H 2O with temperature, during the growth, could be correlated to the formation of longer CNTs (∼2 μm) on NiV and Ta due to their etching effects (i.e. C+CO 2→2CO and C+H 2O→CO+H 2).

  15. Aerosol assisted chemical vapor deposition of superconducting YBa 2Cu 3O 7-χ

    NASA Astrophysics Data System (ADS)

    Salazar, K. V.; Ott, K. C.; Dye, R. C.; Hubbard, K. M.; Peterson, E. J.; Coulter, J. Y.; Kodas, T. T.

    1992-08-01

    A hybrid process, aerosol-assisted chemical vapor deposotion (AACVD), is described for reproducible preparation of superconducting thin films of YBa 2Cu 3O 7-χ. The process consists of atomizing a toluene solution of the Y, Ba, and Cu tetramethylheptanedionato complexes using an aerosol generator. The aerosol is transported into a CVD reactor where solvent and precursor evaporation and deposition occur at atmospheric pressure on heated substrates. The process provides stable evaporation rates for all three precursors, yielding constant film stoichiometry throughout the deposition period and from film to film. Superconducting films may be deposited in-situ at substrate heater temperatures above 825°C, or may be formed at lower temperatures by deposition followed by post-deposition annealing at higher temperatures. The microstructure and quality of films are highly dependent on the conditions employed in deposition and in the case of films deposited below 825°C, the post-deposition annealing conditions. Superconducting films prepared by the AACVD/post-annealing process have a metallic normal state resistivity signature with a zero resistance temperature typically above 88K, and are highly c-axis oriented. Transport critical current densities measured at 75 K on polycrystalline films prepared by the AACVD process are 220 000 A/cm 2 and 84 000 A/cm 2 at self-field and 0.1 T, respectively.

  16. Simplified route to multi-walled carbon nanotube synthesis by aerosol assisted chemical vapor deposition.

    PubMed

    Antúnez-Flores, W; Valenzuela-Muñiz, A M; Amézaga-Madrid, P; Alonso-Nuñez, G; Verde, Y; Martínez-Sánchez, R; Miki-Yoshida, M

    2008-12-01

    Uniform multi-walled carbon nanotubes (MWCNTs) were obtained decomposing toluene inside of fused silica tubing previously covered with Co oxide thin film. The two-step process, ruled successively in the same aerosol assisted chemical vapor deposition (AACVD) set up, constitutes a simplified route to the synthesis of MWCNTs. First, Co oxide thin film was deposited inside of fused silica tubing at 723 K, using a precursor solution of Co acetate in absolute methanol. After Co oxide deposition, the covered tubing was heated up to 1173 K under Ar flow, then a mist of toluene was injected inside the tubing, using also Ar as carrier gas, consequently MWCNTs were obtained in the internal wall of the tubing. The Co oxide film and the MWCNTs were analyzed by scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) and atomic force microscopy (AFM). Uniform and very long MWCNTs (several tens of microm) with diameters around 20 to 100 nm were observed, with the advantage that the content of Co particles inside the nanotube was very low. PMID:19205220

  17. Aerosol-assisted chemical vapor deposition (AACVD) of binary alloy films: Studies of film composition

    SciTech Connect

    Xu, C.; Hampden-Smith, M.J.; Kodas, T.T.

    1995-08-01

    The chemical vapor deposition (CVD) of Cu-Ag and Cu-Pd alloys using aerosol precursor delivery over a range of preheating temperatures, 70 {approximately} 80 C and substrate temperatures, 250 {approximately} 300 C is described. The precursors used include Cu(hfac){sub 2}, (hfac)Ag(SEt{sub 2}) and Pd(hfac){sub 2} dissolved in toluene and 10% H{sub 2} in Ar as carrier gas. The films were characterized by SEM, EDS and X-ray diffraction (XRD). The X-ray diffraction results showed the Cu/Ag films were composed of {alpha}- and {beta}-phases of Cu-Ag alloys, the Cu/Pd films were Cu-Pd and Pd-Ag alloy, solid solutions, under these conditions. Compositional variation studies in Cu-Pd and Pd-Ag alloy systems were also conducted by mixing Cu(hfac){sub 2}/Pd(hfac){sub 2} and (hfac) Ag(SEt{sub 2})/Pd(hfac){sub 2} in toluene solution in different ratios. The films were characterized by X-ray diffraction and the results showed the composition of films was affected by the solution stoichiometry.

  18. Growth of ultra long multiwall carbon nanotube arrays by aerosol-assisted chemical vapor deposition.

    PubMed

    Byeon, Heejun; Kim, Sang Yong; Koh, Ken Ha; Lee, Soonil

    2010-09-01

    Using a home-made aerosol nebulizer, we developed a new aerosol-assisted chemical vapor deposition (AACVD) process that made it possible to synthesize vertically-aligned carbon nanotube (VACNT) arrays with heights over a few millimeters routinely. An essential part of this technique was in-situ formation of metal catalyst nanoparticles via pyrolysis of ferrocene-ethanol aerosol right before CNT synthesis. Through the optimization of aerosol supply and CVD process parameters, we were able to synthesize clean VACNT arrays as long as 4.38 mm with very low metal contents in 20 min. Furthermore, it is worthy noting that such an outstanding height is achieved very quickly without supporting materials and water-assistance. By taking advantage of almost complete inhibition of CNT growth on low melting-temperature metals, we were able to fabricate patterned VACNT arrays by combining AACVD process with a conventional photolithograpic patterning of gold lines. Characterizations of as-grown nanotubes such as morphology, purity, and metal contents are presented. PMID:21133158

  19. Ultrathin 2D Photodetectors Utilizing Chemical Vapor Deposition Grown WS2 With Graphene Electrodes.

    PubMed

    Tan, Haijie; Fan, Ye; Zhou, Yingqiu; Chen, Qu; Xu, Wenshuo; Warner, Jamie H

    2016-08-23

    In this report, graphene (Gr) is used as a 2D electrode and monolayer WS2 as the active semiconductor in ultrathin photodetector devices. All of the 2D materials are grown by chemical vapor deposition (CVD) and thus pose as a viable route to scalability. The monolayer thickness of both electrode and semiconductor gives these photodetectors ∼2 nm thickness. We show that graphene is different to conventional metal (Au) electrodes due to the finite density of states from the Dirac cones of the valence and conduction bands, which enables the photoresponsivity to be modulated by electrostatic gating and light input control. We demonstrate lateral Gr-WS2-Gr photodetectors with photoresponsivities reaching 3.5 A/W under illumination power densities of 2.5 × 10(7) mW/cm(2). The performance of monolayer WS2 is compared to bilayer WS2 in photodetectors and we show that increased photoresponsivity is achieved in the thicker bilayer WS2 crystals due to increased optical absorption. This approach of incorporating graphene electrodes in lateral TMD based devices provides insights on the contact engineering in 2D optoelectronics, which is crucial for the development of high performing ultrathin photodetector arrays for versatile applications. PMID:27440384

  20. Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Foronda, Humberto M.; Laurent, Matthew A.; Yonkee, Benjanim; Keller, Stacia; DenBaars, Steven P.; Speck, James S.

    2016-08-01

    Parasitic pre-reactions are known to play a role in the growth of aluminum nitride (AlN) via metal organic chemical vapor deposition, where they can deplete precursor molecules before reaching the substrate, leading to poor growth efficiency. Studies have shown that reducing the growth pressure and growth temperature results in improved growth efficiency of AlN; however, superior crystal quality and reduced impurity incorporation are generally best obtained when growing at high temperatures. This study shows that, with proper alkyl source dilution, parasitic pre-reactions can be suppressed while maintaining high growth temperatures. The results show an 18× increase in growth rate and efficiency of AlN films: from 0.04 μm h‑1 to 0.73 μm h‑1, and 26 μm mol‑1 to 502 μm mol‑1, respectively; under constant TMAl flow and a small change in total gas flow. This results in 6.8% of Al atoms from the injected TMAl being utilized for AlN layer growth for this reactor configuration. This is better than the standard GaN growth, where 6.0% of the Ga atoms injected from TMGa are utilized for GaN growth.