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Sample records for chemical vapour deposited

  1. Tungsten Deposition on Graphite using Plasma Enhanced Chemical Vapour Deposition.

    NASA Astrophysics Data System (ADS)

    Sharma, Uttam; Chauhan, Sachin S.; Sharma, Jayshree; Sanyasi, A. K.; Ghosh, J.; Choudhary, K. K.; Ghosh, S. K.

    2016-10-01

    The tokamak concept is the frontrunner for achieving controlled thermonuclear reaction on earth, an environment friendly way to solve future energy crisis. Although much progress has been made in controlling the heated fusion plasmas (temperature ∼ 150 million degrees) in tokamaks, technological issues related to plasma wall interaction topic still need focused attention. In future, reactor grade tokamak operational scenarios, the reactor wall and target plates are expected to experience a heat load of 10 MW/m2 and even more during the unfortunate events of ELM's and disruptions. Tungsten remains a suitable choice for the wall and target plates. It can withstand high temperatures, its ductile to brittle temperature is fairly low and it has low sputtering yield and low fuel retention capabilities. However, it is difficult to machine tungsten and hence usages of tungsten coated surfaces are mostly desirable. To produce tungsten coated graphite tiles for the above-mentioned purpose, a coating reactor has been designed, developed and made operational at the SVITS, Indore. Tungsten coating on graphite has been attempted and successfully carried out by using radio frequency induced plasma enhanced chemical vapour deposition (rf -PECVD) for the first time in India. Tungsten hexa-fluoride has been used as a pre-cursor gas. Energy Dispersive X-ray spectroscopy (EDS) clearly showed the presence of tungsten coating on the graphite samples. This paper presents the details of successful operation and achievement of tungsten coating in the reactor at SVITS.

  2. Light-induced chemical vapour deposition painting with titanium dioxide

    NASA Astrophysics Data System (ADS)

    Halary-Wagner, E.; Bret, T.; Hoffmann, P.

    2003-03-01

    Light-induced chemical vapour deposits of titanium dioxide are obtained from titanium tetra-isopropoxide (TTIP) in an oxygen and nitrogen atmosphere with a long pulse (250 ns) 308 nm XeCl excimer laser using a mask projection set-up. The demonstrated advantages of this technique are: (i) selective area deposition, (ii) precise control of the deposited thickness and (iii) low temperature deposition, enabling to use a wide range of substrates. A revolving mask system enables, in a single reactor load, to deposit shapes of controlled heights, which overlap to build up a complex pattern. Interferential multi-coloured deposits are achieved, and the process limitations (available colours and resolution) are discussed.

  3. Nano structured carbon nitrides prepared by chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Karuppannan, Ramesh; Prashantha, M.

    2010-08-01

    Nanostructured carbon nitride films were prepared by pyrolysis assisted chemical vapour deposition(CVD). A two zone furnace with a temperature profile having a uniform temperature over a length of 20 cm length has been designed and developed. The precursor Azabenzimidazole was taken in a quartz tube and evaporated at 400 0C. The dense vapours enter the pyrolysis zone kept at a desired temperature and deposit on the quartz substrates. The FTIR spectrum of the prepared samples shows peaks at 1272 cm-1 (C.N stretching) and 1600 cm-1 (C=N) confirms the bonding of nitrogen with carbon. Raman D and G peaks, are observed at 1360 cm-1 and 1576 cm-1 respectively. XPS core level spectra of C 1s and N 1s show the formation of π bonding between carbon and nitrogen atoms. The size of the nano crystals estimated from the SEM images and XRD is ~100 nm. In some regions of the sample a maximum of 57 atom % of nitrogen has been observed.

  4. Chemical vapour deposition: Transition metal carbides go 2D

    DOE PAGES

    Gogotsi, Yury

    2015-08-17

    Here, the research community has been steadily expanding the family of few-atom-thick crystals beyond graphene, discovering new materials or producing known materials in a 2D state and demonstrating their unique properties1, 2. Recently, nanometre-thin 2D transition metal carbides have also joined this family3. Writing in Nature Materials, Chuan Xu and colleagues now report a significant advance in the field, showing the synthesis of large-area, high-quality, nanometre-thin crystals of molybdenum carbide that demonstrate low-temperature 2D superconductivity4. Moreover, they also show that other ultrathin carbide crystals, such as tungsten and tantalum carbides, can be grown by chemical vapour deposition with a highmore » crystallinity and very low defect concentration.« less

  5. Chemical vapour deposition synthetic diamond: materials, technology and applications

    NASA Astrophysics Data System (ADS)

    Balmer, R. S.; Brandon, J. R.; Clewes, S. L.; Dhillon, H. K.; Dodson, J. M.; Friel, I.; Inglis, P. N.; Madgwick, T. D.; Markham, M. L.; Mollart, T. P.; Perkins, N.; Scarsbrook, G. A.; Twitchen, D. J.; Whitehead, A. J.; Wilman, J. J.; Woollard, S. M.

    2009-09-01

    Substantial developments have been achieved in the synthesis of chemical vapour deposition (CVD) diamond in recent years, providing engineers and designers with access to a large range of new diamond materials. CVD diamond has a number of outstanding material properties that can enable exceptional performance in applications as diverse as medical diagnostics, water treatment, radiation detection, high power electronics, consumer audio, magnetometry and novel lasers. Often the material is synthesized in planar form; however, non-planar geometries are also possible and enable a number of key applications. This paper reviews the material properties and characteristics of single crystal and polycrystalline CVD diamond, and how these can be utilized, focusing particularly on optics, electronics and electrochemistry. It also summarizes how CVD diamond can be tailored for specific applications, on the basis of the ability to synthesize a consistent and engineered high performance product.

  6. Chemical vapour deposition: Transition metal carbides go 2D

    SciTech Connect

    Gogotsi, Yury

    2015-08-17

    Here, the research community has been steadily expanding the family of few-atom-thick crystals beyond graphene, discovering new materials or producing known materials in a 2D state and demonstrating their unique properties1, 2. Recently, nanometre-thin 2D transition metal carbides have also joined this family3. Writing in Nature Materials, Chuan Xu and colleagues now report a significant advance in the field, showing the synthesis of large-area, high-quality, nanometre-thin crystals of molybdenum carbide that demonstrate low-temperature 2D superconductivity4. Moreover, they also show that other ultrathin carbide crystals, such as tungsten and tantalum carbides, can be grown by chemical vapour deposition with a high crystallinity and very low defect concentration.

  7. Long distance spin communication in chemical vapour deposited graphene

    PubMed Central

    Kamalakar, M. Venkata; Groenveld, Christiaan; Dankert, André; Dash, Saroj P.

    2015-01-01

    Graphene is an ideal medium for long-distance spin communication in future spintronic technologies. So far, the prospect is limited by the smaller sizes of exfoliated graphene flakes and lower spin transport properties of large-area chemical vapour-deposited (CVD) graphene. Here we demonstrate a high spintronic performance in CVD graphene on SiO2/Si substrate at room temperature. We show pure spin transport and precession over long channel lengths extending up to 16 μm with a spin lifetime of 1.2 ns and a spin diffusion length ∼6 μm at room temperature. These spin parameters are up to six times higher than previous reports and highest at room temperature for any form of pristine graphene on industrial standard SiO2/Si substrates. Our detailed investigation reinforces the observed performance in CVD graphene over wafer scale and opens up new prospects for the development of lateral spin-based memory and logic applications. PMID:25857650

  8. Photo Initiated Chemical Vapour Deposition To Increase Polymer Hydrophobicity

    PubMed Central

    Bérard, Ariane; Patience, Gregory S.; Chouinard, Gérald; Tavares, Jason R.

    2016-01-01

    Apple growers face new challenges to produce organic apples and now many cover orchards with high-density polyethylene (HDPE) nets to exclude insects, rather than spraying insecticides. However, rainwater- associated wetness favours the development of apple scabs, Venturia inaequalis, whose lesions accumulate on the leaves and fruit causing unsightly spots. Treating the nets with a superhydrophobic coating should reduce the amount of water that passes through the net. Here we treat HDPE and polyethylene terephthalate using photo-initiated chemical vapour deposition (PICVD). We placed polymer samples in a quartz tube and passed a mixture of H2 and CO through it while a UVC lamp (254 nm) illuminated the surface. After the treatment, the contact angle between water droplets and the surface increased by an average of 20°. The contact angle of samples placed 70 cm from the entrance of the tube was higher than those at 45 cm and 20 cm. The PICVD-treated HDPE achieved a contact angle of 124°. Nets spray coated with a solvent-based commercial product achieved 180° but water ingress was, surprisingly, higher than that for nets with a lower contact angle. PMID:27531048

  9. Hot filament chemical vapour deposition of diamond ultramicroelectrodes.

    PubMed

    Hu, Jingping; Foord, John S; Holt, Katherine B

    2007-10-28

    The hot filament chemical vapour deposition of boron-doped diamond was optimised for the fabrication of diamond ultramicroelectrodes. Applications of ultramicroelectrodes require thin, conformal and non-porous diamond coatings, which display electrochemical properties similar to those associated with good quality doped diamond electrodes. The growth conditions to attain these goals are elucidated. The influence of the use of nanodiamond ultrasonic seeding prior to growth, in order to promote nucleation, and varying the negative electrical bias and methane concentration during growth, to control the growth chemistry, are explored. Although Raman spectroscopy shows a deterioration of diamond phase quality with increased negative bias voltage during growth, cyclic voltammetry indicates an improved electrochemical performance due to decreased porosity at reduced grain size under moderate bias voltage. At even higher bias voltage, the electrochemical properties deteriorate due to aggregation of sp(2) hybridised carbon at grain boundaries. By combining efficient nucleation methods and appropriate methane concentrations and electrical bias during growth, small grain polycrystalline diamond coatings can be obtained, which show optimal electrochemical properties most suitable for ultramicroelectrode applications.

  10. High crystalline quality single crystal chemical vapour deposition diamond.

    PubMed

    Martineau, P M; Gaukroger, M P; Guy, K B; Lawson, S C; Twitchen, D J; Friel, I; Hansen, J O; Summerton, G C; Addison, T P G; Burns, R

    2009-09-09

    Homoepitaxial chemical vapour deposition (CVD) on high pressure, high temperature (HPHT) synthetic diamond substrates allows the production of diamond material with controlled point defect content. In order to minimize the extended defect content, however, it is necessary to minimize the number of substrate extended defects that reach the initial growth surface and the nucleation of dislocations at the interface between the CVD layer and its substrate. X-ray topography has indicated that when type IIa HPHT synthetic substrates are used, the density of dislocations nucleating at the interface can be less than 400  cm(-2). X-ray topography, photoluminescence imaging and birefringence microscopy of HPHT grown synthetic type IIa diamond clearly show that the extended defect content is growth sector dependent. ⟨111⟩ sectors contain the highest concentration of both stacking faults and dislocations but ⟨100⟩ sectors are relatively free of both. It has been shown that HPHT treatment of such material can significantly reduce the area of stacking faults and cause dislocations to move. This knowledge, coupled with an understanding of how growth sectors develop during HPHT synthesis, has been used to guide selection and processing of substrates suitable for CVD synthesis of material with high crystalline perfection and controlled point defect content.

  11. Photo Initiated Chemical Vapour Deposition To Increase Polymer Hydrophobicity

    NASA Astrophysics Data System (ADS)

    Bérard, Ariane; Patience, Gregory S.; Chouinard, Gérald; Tavares, Jason R.

    2016-08-01

    Apple growers face new challenges to produce organic apples and now many cover orchards with high-density polyethylene (HDPE) nets to exclude insects, rather than spraying insecticides. However, rainwater- associated wetness favours the development of apple scabs, Venturia inaequalis, whose lesions accumulate on the leaves and fruit causing unsightly spots. Treating the nets with a superhydrophobic coating should reduce the amount of water that passes through the net. Here we treat HDPE and polyethylene terephthalate using photo-initiated chemical vapour deposition (PICVD). We placed polymer samples in a quartz tube and passed a mixture of H2 and CO through it while a UVC lamp (254 nm) illuminated the surface. After the treatment, the contact angle between water droplets and the surface increased by an average of 20°. The contact angle of samples placed 70 cm from the entrance of the tube was higher than those at 45 cm and 20 cm. The PICVD-treated HDPE achieved a contact angle of 124°. Nets spray coated with a solvent-based commercial product achieved 180° but water ingress was, surprisingly, higher than that for nets with a lower contact angle.

  12. Photo Initiated Chemical Vapour Deposition To Increase Polymer Hydrophobicity.

    PubMed

    Bérard, Ariane; Patience, Gregory S; Chouinard, Gérald; Tavares, Jason R

    2016-08-17

    Apple growers face new challenges to produce organic apples and now many cover orchards with high-density polyethylene (HDPE) nets to exclude insects, rather than spraying insecticides. However, rainwater- associated wetness favours the development of apple scabs, Venturia inaequalis, whose lesions accumulate on the leaves and fruit causing unsightly spots. Treating the nets with a superhydrophobic coating should reduce the amount of water that passes through the net. Here we treat HDPE and polyethylene terephthalate using photo-initiated chemical vapour deposition (PICVD). We placed polymer samples in a quartz tube and passed a mixture of H2 and CO through it while a UVC lamp (254 nm) illuminated the surface. After the treatment, the contact angle between water droplets and the surface increased by an average of 20°. The contact angle of samples placed 70 cm from the entrance of the tube was higher than those at 45 cm and 20 cm. The PICVD-treated HDPE achieved a contact angle of 124°. Nets spray coated with a solvent-based commercial product achieved 180° but water ingress was, surprisingly, higher than that for nets with a lower contact angle.

  13. On The Stability Of Model Flows For Chemical Vapour Deposition

    NASA Astrophysics Data System (ADS)

    Miller, Robert

    2016-11-01

    The flow in a chemical vapour deposition (CVD) reactor is assessed. The reactor is modelled as a flow over an infinite-radius rotating disk, where the mean flow and convective instability of the disk boundary layer are measured. Temperature-dependent viscosity and enforced axial flow are used to model the steep temperature gradients present in CVD reactors and the pumping of the gas towards the disk, respectively. Increasing the temperature-dependence parameter of the fluid viscosity (ɛ) results in an overall narrowing of the fluid boundary layer. Increasing the axial flow strength parameter (Ts) accelerates the fluid both radially and axially, while also narrowing the thermal boundary layer. It is seen that when both effects are imposed, the effects of axial flow generally dominate those of the viscosity temperature dependence. A local stability analysis is performed and the linearized stability equations are solved using a Galerkin projection in terms of Chebyshev polynomials. The neutral stability curves are then plotted for a range of ɛ and Ts values. Preliminary results suggest that increasing Ts has a stabilising effect on both type I and type II stationary instabilities, while small increases in ɛ results in a significant reduction to the critical Reynolds number.

  14. Simplified Monte Carlo simulations of chemical vapour deposition diamond growth.

    PubMed

    May, Paul W; Allan, Neil L; Ashfold, Michael N R; Richley, James C; Mankelevich, Yuri A

    2009-09-09

    A simple one-dimensional Monte Carlo model has been developed to simulate the chemical vapour deposition (CVD) of a diamond (100) surface. The model considers adsorption, etching/desorption, lattice incorporation, and surface migration along and across the dimer rows. The top of a step-edge is considered to have an infinite Ehrlich-Schwoebel potential barrier, so that mobile surface species cannot migrate off the edge. The reaction probabilities are taken from experimental or calculated literature values for standard CVD diamond conditions. The criterion used for the critical nucleus needed to form a new layer is considered to be two surface carbon species bonded together, which forms an immobile, unetchable step on the surface. This nucleus can arise from two migrating species meeting, or from direct adsorption of a carbon species next to a migrating species. The analysis includes film growth rate, surface roughness, and the evolving film morphology as a function of varying reaction probabilities. Using standard CVD diamond parameters, the simulations reveal that a smooth film is produced with apparent step-edge growth, with growth rates (∼1 µm h(-1)) consistent with experiment. The β-scission reaction was incorporated into the model, but was found to have very little effect upon growth rates or film morphology. Renucleation events believed to be due to reactive adsorbates, such as C atoms or CN groups, were modelled by creating random surface defects which form another type of critical nucleus upon which to nucleate a new layer. These were found to increase the growth rate by a factor of ∼10 when the conditions were such that the rate-limiting step for growth was new layer formation. For other conditions these surface defects led to layered 'wedding cake' structures or to rough irregular surfaces resembling those seen experimentally during CVD of nanocrystalline diamond.

  15. Carbon Nanotubes/Nanofibers by Plasma Enhanced Chemical Vapour Deposition

    NASA Technical Reports Server (NTRS)

    Teo, K. B. K.; Hash, D. B.; Bell, M. S.; Chhowalla, M.; Cruden, B. A.; Amaratunga, G. A. J.; Meyyappan, M.; Milne, W. I.

    2005-01-01

    Plasma enhanced chemical vapour deposition (PECVD) has been recently used for the production of vertically aligned carbon nanotubedfibers (CN) directly on substrates. These structures are potentially important technologically as electron field emitters (e.g. microguns, microwave amplifiers, displays), nanoelectrodes for sensors, filter media, superhydrophobic surfaces and thermal interface materials for microelectronics. A parametric study on the growth of CN grown by glow discharge dc-PECVD is presented. In this technique, a substrate containing thin film Ni catalyst is exposed to C2H2 and NH3 gases at 700 C. Without plasma, this process is essentially thermal CVD which produces curly spaghetti-like CN as seen in Fig. 1 (a). With the plasma generated by biasing the substrate at -6OOV, we observed that the CN align vertically during growth as shown in Fig. l(b), and that the magnitude of the applied substrate bias affects the degree of alignment. The thickness of the thin film Ni catalyst was found to determine the average diameter and inversely the length of the CN. The yield and density of the CN were controlled by the use of different diffusion barrier materials under the Ni catalyst. Patterned CN growth [Fig. l(c)], with la variation in CN diameter of 4.1% and 6.3% respectively, is achieved by lithographically defining the Ni thin film prior to growth. The shape of the structures could be varied from very straight nanotube-like to conical tip-like nanofibers by increasing the ratio of C2H2 in the gas flow. Due to the plasma decomposition of C2H2, amorphous carbon (a-C) is an undesirable byproduct which could coat the substrate during CN growth. Using a combination of depth profiled Auger electron spectroscopy to study the substrate and in-situ mass spectroscopy to examine gas phase neutrals and ions, the optimal conditions for a-C free growth of CN is determined.

  16. Structural and optical properties of CZTS thin films deposited by ultrasonically assisted chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Zubair Ansari, Mohd; Khare, Neeraj

    2014-05-01

    Ultrasonically assisted chemical vapour deposition has been used for the deposition of thin films of Cu2ZnSnS4 (CZTS) on glass substrates. The effect of substrate temperature on the structural and optical properties of thin films has been investigated. The CZTS films show a tetragonal structure with preferential orientation along the (1 1 2) plane. X-ray diffraction and Raman studies confirm the formation of a single-phase CZTS film at a deposition temperature of 325 °C. These films show p-type semiconducting behaviour with a carrier concentration ˜1017 cm-3, optical absorption coefficient ˜104 cm-1 and direct optical band gap ˜1.4 eV. At higher substrate temperatures (⩾350 °C), secondary phases of Cu2-xS and SnS2 also start growing along with the CZTS phase. The band gap of CZTS films increases from 1.40 to 1.50 eV as the deposition temperature increases from 325 to 400 °C. The observed higher band gap for CZTS films deposited at 400 °C has been attributed to the growth of the Cu2-xS and SnS2 secondary phase and a sulfur-poor CZTS phase. The activation energy of the CZTS thin film deposited at 325 °C is 15 meV.

  17. Characterisation of TiO 2 deposited by photo-induced chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Kaliwoh, Never; Zhang, Jun-Ying; Boyd, Ian W.

    2002-01-01

    We report the deposition of thin TiO 2 films on crystalline Si and quartz by photo-induced chemical vapour deposition (CVD) using UV excimer lamps employing a dielectric barrier discharge in krypton chloride (KrCl ∗) to provide intense narrow band radiation at λ=222 nm. The precursor used was titanium isopropoxide (TTIP). Films from around 20-510 nm in thickness with refractive indices from 2.20 to 2.54 were grown at temperatures between 50 and 350 °C. The higher refractive index values compare favourably with the value of 2.58 recorded for the bulk material. The measured deposition rate was around 50 nm/min at 350 °C. Fourier transform infrared spectroscopy (FTIR) revealed the presence of TiO 2 through the observation of a Ti-O absorption peak and the absence of OH in films deposited at 250-350 °C indicated relatively good quality films. The phase of films deposited at 200-350 °C was anatase as determined by X-ray diffraction.

  18. Fluorinated carboxylic membranes deposited by plasma enhanced chemical vapour deposition for fuel cell applications

    NASA Astrophysics Data System (ADS)

    Thery, J.; Martin, S.; Faucheux, V.; Le Van Jodin, L.; Truffier-Boutry, D.; Martinent, A.; Laurent, J.-Y.

    Among the fuel cell technologies, the polymer electrolyte membrane fuel cells (PEMFCs) are particularly promising because they are energy-efficient, clean, and fuel-flexible (i.e., can use hydrogen or methanol). The great majority of PEM fuel cells rely on a polymer electrolyte from the family of perfluorosulfonic acid membranes, nevertheless alternative materials are currently being developed, mainly to offer the alternative workout techniques which are required for the portable energy sources. Plasma polymerization represents a good solution, as it offers the possibility to deposit thin layer with an accurate and homogeneous thickness, even on 3D surfaces. In this paper, we present the results for the growth of proton conductive fluoro carboxylic membranes elaborated by plasma enhanced chemical vapour deposition. These membranes present conductivity values of the same order than the one of Nafion ®. The properties of the membrane, such as the chemical composition, the ionic conductivity, the swelling behaviour and the permeability were correlated to the plasma process parameters. The membranes were integrated in fuel cells on porous substrates and we present here the results regarding the barrier effect and the power output. Barrier effect similar to those of 40 μm Nafion ® layers was reached for 10 μm thick carboxylic membranes. Power outputs around 3 mW cm -2 were measured. We discuss the results regarding the gas barrier effect and the power outputs.

  19. Chemical vapour deposition of thermochromic vanadium dioxide thin films for energy efficient glazing

    SciTech Connect

    Warwick, Michael E.A.; Binions, Russell

    2014-06-01

    Vanadium dioxide is a thermochromic material that undergoes a semiconductor to metal transitions at a critical temperature of 68 °C. This phase change from a low temperature monoclinic structure to a higher temperature rutile structure is accompanied by a marked change in infrared reflectivity and change in resistivity. This ability to have a temperature-modulated film that can limit solar heat gain makes vanadium dioxide an ideal candidate for thermochromic energy efficient glazing. In this review we detail the current challenges to such glazing becoming a commercial reality and describe the key chemical vapour deposition technologies being employed in the latest research. - Graphical abstract: Schematic demonstration of the effect of thermochromic glazing on solar radiation (red arrow represents IR radiation, black arrow represents all other solar radiation). - Highlights: • Vanadium dioxide thin films for energy efficient glazing. • Reviews chemical vapour deposition techniques. • Latest results for thin film deposition for vanadium dioxide.

  20. Light induced chemical vapour deposition of titanium oxide thin films at room temperature

    NASA Astrophysics Data System (ADS)

    Halary, E.; Benvenuti, G.; Wagner, F.; Hoffmann, P.

    2000-02-01

    High resolution patterned deposition of titania is achieved by light induced chemical vapour deposition (LICVD), by imaging a mask onto a glass substrate. A long pulse XeCl Excimer laser (308 nm) provides, by perpendicular irradiation, the energy to convert titanium tetraisopropoxide (TTIP) vapour into titanium dioxide films, in an oxygen atmosphere, on unheated glass substrates. The amorphous titania deposits contain about 6% carbon contamination according to X-ray photoelectron spectroscopy (XPS) measurements. The deposition rate increases with increasing laser fluence until a maximum value is reached, then remains constant over a wide range, and finally decreases with further fluence increase due to titania ablation or thermal effects. The film thickness increases linearly with the number of pulses after a nucleation period. The strong influence of the laser pulse repetition rate on the growth rate and the thickness profile are reported.

  1. Chemical vapour deposition of zeolitic imidazolate framework thin films.

    PubMed

    Stassen, Ivo; Styles, Mark; Grenci, Gianluca; Gorp, Hans Van; Vanderlinden, Willem; Feyter, Steven De; Falcaro, Paolo; Vos, Dirk De; Vereecken, Philippe; Ameloot, Rob

    2016-03-01

    Integrating metal-organic frameworks (MOFs) in microelectronics has disruptive potential because of the unique properties of these microporous crystalline materials. Suitable film deposition methods are crucial to leverage MOFs in this field. Conventional solvent-based procedures, typically adapted from powder preparation routes, are incompatible with nanofabrication because of corrosion and contamination risks. We demonstrate a chemical vapour deposition process (MOF-CVD) that enables high-quality films of ZIF-8, a prototypical MOF material, with a uniform and controlled thickness, even on high-aspect-ratio features. Furthermore, we demonstrate how MOF-CVD enables previously inaccessible routes such as lift-off patterning and depositing MOF films on fragile features. The compatibility of MOF-CVD with existing infrastructure, both in research and production facilities, will greatly facilitate MOF integration in microelectronics. MOF-CVD is the first vapour-phase deposition method for any type of microporous crystalline network solid and marks a milestone in processing such materials.

  2. Functionalization of Hydrogenated Chemical Vapour Deposition-Grown Graphene by On-Surface Chemical Reactions.

    PubMed

    Drogowska, Karolina; Kovaříček, Petr; Kalbáč, Martin

    2017-03-23

    The reactivity of hydrogenated graphene when treated with oxidising agents, KMnO4 and KIO4 , as well as alkylated with benzyl bromide (BnBr) was studied. The probed reactions are strictly limited to the partly hydrogenated form of graphene in which most of the hydrogen atoms are located in activated benzylic/allylic positions. This, in turn, clearly demonstrates the presence of hydrogen attached to the graphene lattice. Attachment of the benzyl group was also unequivocally demonstrated by characteristic vibrations recorded in the surface-enhanced Raman spectra, and all reactions were shown to proceed solely on hydrogenated graphene as evidenced by the comparison with pristine chemical vapour deposition-grown graphene.

  3. Laser-induced chemical vapour deposition of conductive and insulating thin films

    NASA Astrophysics Data System (ADS)

    Reisse, G.; Gaensicke, F.; Ebert, R.; Illmann, U.; Johansen, H.

    1992-01-01

    Investigations concerning the laser-induced chemical vapour deposition of Mo, W, Co and TiSi 2 conductive thin film structures from Mo(CO) 6, W(CO) 6, Co 2(CO) 8, TiCl 4 and SiH 4 using a direct writing method are presented. SiO 2 thin films were deposited from SiH 4 and N 2O in a large area deposition process stimulated by an excimer laser by using a parallel beam configuration.

  4. Aerosol assisted chemical vapour deposition of tungsten oxide films from polyoxotungstate precursors: active photocatalysts.

    PubMed

    Cross, Warren B; Parkin, Ivan P

    2003-07-21

    Aerosol assisted chemical vapour deposition of polyoxotungstate precursors [n-Bu4N]2[W6O19] and [n-Bu4N]4H3[PW11O39] produces films of WO(3 - x) and WO3 on glass substrates; the WO3 films show significant photocatalytic decomposition of a test organic pollutant--stearic acid--when irradiated with either 254 or 365 nm radiation.

  5. Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapour Deposition

    DTIC Science & Technology

    2011-06-01

    active investigation, both experimentally25–28 and theoretically29–31. For example, exfoliated monolayer graphene flakes can show both zigzag and...crystalsmade of eithermultilayer or monolayer CVD graphene as well as transferred exfoliated graphene /graphite. Seeds made from multilayer CVD graphene ...synthesis of graphene by chemical vapour deposition and its application in hydrogen sensing. Sens. Actuat. B 150, 296–300 (2010). 21. Li, X. S., Cai, W. W

  6. Chemical vapour deposition of oriented diamond nanocrystallites by a bias-enhanced nucleation method.

    PubMed

    Yan, Jhih-Kun; Chang, Li

    2006-11-28

    A microwave plasma chemical vapour deposition (MPCVD) system has been used to deposit nanometre-sized single-crystalline diamonds on 1 × 1 cm(2) Si(100) substrates. The distribution of deposited diamonds has good uniformity over the whole Si substrate surface by using a dome-shaped Mo anode which allows the application of bias-enhanced nucleation. The morphology and crystallinity of the deposits on Si were characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) with electron diffraction and lattice images. SEM and TEM observations show that oriented diamond nuclei as single crystals with facets can form on self-formed Si cones through epitaxial SiC within a short bias period. After a longer bias time, it has been observed that polycrystalline diamonds formed as a result of secondary nucleation.

  7. Graphene growth by transfer-free chemical vapour deposition on a cobalt layer

    NASA Astrophysics Data System (ADS)

    Macháč, Petr; Hejna, Ondřej; Slepička, Petr

    2017-01-01

    The contribution deals with the preparation of graphene films by a transfer-free chemical vapour deposition process utilizing a thin cobalt layer. This method allows growing graphene directly on a dielectric substrate. The process was carried out in a cold-wall reactor with methane as carbon precursor. We managed to prepare bilayer graphene. The best results were obtained for a structure with a cobalt layer with a thickness of 50 nm. The quality of prepared graphene films and of the number of graphene layers were estimated using Raman spectroscopy. with a minimal dots diameter of 180 nm and spacing of 1000 nm were successfully developed.

  8. Amorphous hollow carbon spheres synthesized using radio frequency plasma-enhanced chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Yang, G. M.; Xu, Q.; Tian, H. W.; Wang, X.; Zheng, W. T.

    2008-10-01

    We report a method to synthesize amorphous hollow carbon spheres, with diameters ranging from 100 to 800 nm, which are dispersed among bent graphitized carbon nanotubes using radio frequency plasma-enhanced chemical vapour deposition in mixed CH4/H2 gases. The products are characterized by techniques including scanning electron microscopy, energy-dispersive x-ray spectroscopy, Raman spectroscopy and transmission electron microscopy. It is found that MgO and Ni nanoparticles together with hydrogen play important roles in the formation of the spheres. A possible formation mechanism for the carbon composites has been proposed.

  9. Chemical vapour deposition of thermochromic vanadium dioxide thin films for energy efficient glazing

    NASA Astrophysics Data System (ADS)

    Warwick, Michael E. A.; Binions, Russell

    2014-06-01

    Vanadium dioxide is a thermochromic material that undergoes a semiconductor to metal transitions at a critical temperature of 68 °C. This phase change from a low temperature monoclinic structure to a higher temperature rutile structure is accompanied by a marked change in infrared reflectivity and change in resistivity. This ability to have a temperature-modulated film that can limit solar heat gain makes vanadium dioxide an ideal candidate for thermochromic energy efficient glazing. In this review we detail the current challenges to such glazing becoming a commercial reality and describe the key chemical vapour deposition technologies being employed in the latest research.

  10. TOPICAL REVIEW Charged nanoparticles in thin film and nanostructure growth by chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Hwang, Nong-Moon; Lee, Dong-Kwon

    2010-12-01

    The critical role of charged nanoclusters and nanoparticles in the growth of thin films and nanostructures by chemical vapour deposition (CVD) is reviewed. Advanced nanoparticle detection techniques have shown that charged gas-phase nuclei tend to be formed under conventional processing conditions of thin films and nanostructures by thermal, hot-wire and plasma CVD. The relation between gas-phase nuclei and thin film and nanostructure growth has not been clearly understood. In this review it will be shown that many films and nanostructures, which have been believed to grow by individual atoms or molecules, actually grow by the building blocks of such charged nuclei. This new growth mechanism was revealed in an attempt to explain many puzzling phenomena involved in the gas-activated diamond CVD process. Therefore, detailed thermodynamic and kinetic analyses will be made to draw the conclusion that the well-known phenomenon of deposition of less stable diamond with simultaneous etching of stable graphite should be an indication of diamond growth exclusively by charged nuclei formed in the gas phase. A similar logic was applied to the phenomenon of simultaneous deposition and etching of silicon, which also leads to the conclusion that silicon films by CVD should grow mainly by the building blocks of charged nuclei. This new mechanism of crystal growth appears to be general in many CVD and some physical vapour deposition (PVD) processes. In plasma CVD, this new mechanism has already been utilized to open a new field of plasma-aided nanofabrication.

  11. Giant spin Hall effect in graphene grown by chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Balakrishnan, Jayakumar; Koon, Gavin Kok Wai; Avsar, Ahmet; Ho, Yuda; Lee, Jong Hak; Jaiswal, Manu; Baeck, Seung-Jae; Ahn, Jong-Hyun; Ferreira, Aires; Cazalilla, Miguel A.; Neto, Antonio H. Castro; Özyilmaz, Barbaros

    2014-09-01

    Advances in large-area graphene synthesis via chemical vapour deposition on metals like copper were instrumental in the demonstration of graphene-based novel, wafer-scale electronic circuits and proof-of-concept applications such as flexible touch panels. Here, we show that graphene grown by chemical vapour deposition on copper is equally promising for spintronics applications. In contrast to natural graphene, our experiments demonstrate that chemically synthesized graphene has a strong spin-orbit coupling as high as 20 meV giving rise to a giant spin Hall effect. The exceptionally large spin Hall angle ~0.2 provides an important step towards graphene-based spintronics devices within existing complementary metal-oxide-semiconductor technology. Our microscopic model shows that unavoidable residual copper adatom clusters act as local spin-orbit scatterers and, in the resonant scattering limit, induce transverse spin currents with enhanced skew-scattering contribution. Our findings are confirmed independently by introducing metallic adatoms-copper, silver and gold on exfoliated graphene samples.

  12. Giant spin Hall effect in graphene grown by chemical vapour deposition.

    PubMed

    Balakrishnan, Jayakumar; Koon, Gavin Kok Wai; Avsar, Ahmet; Ho, Yuda; Lee, Jong Hak; Jaiswal, Manu; Baeck, Seung-Jae; Ahn, Jong-Hyun; Ferreira, Aires; Cazalilla, Miguel A; Castro Neto, Antonio H; Özyilmaz, Barbaros

    2014-09-01

    Advances in large-area graphene synthesis via chemical vapour deposition on metals like copper were instrumental in the demonstration of graphene-based novel, wafer-scale electronic circuits and proof-of-concept applications such as flexible touch panels. Here, we show that graphene grown by chemical vapour deposition on copper is equally promising for spintronics applications. In contrast to natural graphene, our experiments demonstrate that chemically synthesized graphene has a strong spin-orbit coupling as high as 20 meV giving rise to a giant spin Hall effect. The exceptionally large spin Hall angle ~0.2 provides an important step towards graphene-based spintronics devices within existing complementary metal-oxide-semiconductor technology. Our microscopic model shows that unavoidable residual copper adatom clusters act as local spin-orbit scatterers and, in the resonant scattering limit, induce transverse spin currents with enhanced skew-scattering contribution. Our findings are confirmed independently by introducing metallic adatoms-copper, silver and gold on exfoliated graphene samples.

  13. Hot-wire chemical vapour deposition at low substrate temperatures for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Bakker, R.

    2010-09-01

    The need for large quantities of rapidly and cheaply produced electronic devices has increased rapidly over the past decades. The transistors and diodes that are used to build these devices are predominantly made of crystalline silicon. Since crystalline silicon is very expensive to produce on a large scale and cannot be directly deposited on plastic substrates, much research is being done on thin film amorphous or nanocrystalline semiconductors and insulators. Hot-wire chemical vapour deposition (HWCVD) is a novel, low cost, and convenient way to deposit these materials. The process can be controlled in such a way that specific chemical reactions take place and unwanted side reactions are minimized. It can easily be scaled up to produce large-area thin film electronics. Conventionally, plasma enhanced chemical vapour deposition (PECVD) is used to deposit semiconductors and inorganic dielectrics. Recently, HWCVD has been explored for fast deposition of such materials. An adaptation of HWCVD, initiated chemical vapour deposition (iCVD), offers the unique possibility of producing organic materials and polymers in a vacuum reactor, without the use of solvents. This technique was originally proposed at the Massachusetts institute of technology (MIT) by Prof. Karen Gleason. The iCVD process involves the creation of radicals by dissociation of a peroxide (a molecule with a ~O-O~ bond) by a heated wire in a vacuum reactor. This radical initiates a polymerization reaction of a vinyl (a molecule with a double carbon-carbon bond, ~C=C~) monomer at a substrate held at room temperature. This thesis describes a dedicated iCVD reactor for polymer deposition, installed at Utrecht University, along with a reactor with a cooled substrate holder in an existing HWCVD multi-chamber setup for low-temperature silicon nitride (SiNx) depositions. The most important features of these reactors are described and the characterization techniques are explained. This thesis contains four new

  14. High-quality monolayer superconductor NbSe2 grown by chemical vapour deposition.

    PubMed

    Wang, Hong; Huang, Xiangwei; Lin, Junhao; Cui, Jian; Chen, Yu; Zhu, Chao; Liu, Fucai; Zeng, Qingsheng; Zhou, Jiadong; Yu, Peng; Wang, Xuewen; He, Haiyong; Tsang, Siu Hon; Gao, Weibo; Suenaga, Kazu; Ma, Fengcai; Yang, Changli; Lu, Li; Yu, Ting; Teo, Edwin Hang Tong; Liu, Guangtong; Liu, Zheng

    2017-08-30

    The discovery of monolayer superconductors bears consequences for both fundamental physics and device applications. Currently, the growth of superconducting monolayers can only occur under ultrahigh vacuum and on specific lattice-matched or dangling bond-free substrates, to minimize environment- and substrate-induced disorders/defects. Such severe growth requirements limit the exploration of novel two-dimensional superconductivity and related nanodevices. Here we demonstrate the experimental realization of superconductivity in a chemical vapour deposition grown monolayer material-NbSe2. Atomic-resolution scanning transmission electron microscope imaging reveals the atomic structure of the intrinsic point defects and grain boundaries in monolayer NbSe2, and confirms the low defect concentration in our high-quality film, which is the key to two-dimensional superconductivity. By using monolayer chemical vapour deposited graphene as a protective capping layer, thickness-dependent superconducting properties are observed in as-grown NbSe2 with a transition temperature increasing from 1.0 K in monolayer to 4.56 K in 10-layer.Two-dimensional superconductors will likely have applications not only in devices, but also in the study of fundamental physics. Here, Wang et al. demonstrate the CVD growth of superconducting NbSe2 on a variety of substrates, making these novel materials increasingly accessible.

  15. Gas-phase dynamics in graphene growth by chemical vapour deposition.

    PubMed

    Li, Gan; Huang, Sheng-Hong; Li, Zhenyu

    2015-09-21

    Chemical vapour deposition on a Cu substrate is becoming a very important approach to obtain high quality graphene samples. Previous studies of graphene growth on Cu mainly focus on surface processes. However, recent experiments suggest that gas-phase dynamics also plays an important role in graphene growth. In this article, gas-phase processes are systematically studied using computational fluid dynamics. Our simulations clearly show that graphene growth is limited by mass transport under ambient pressures while it is limited by surface reactions under low pressures. The carbon deposition rate at different positions in the tube furnace and the concentration of different gas phase species are calculated. Our results confirm that the previously realized graphene thickness control by changing the position of the Cu foil is a result of gas-phase methane decomposition reactions.

  16. Growth of polycrystalline silicon films on glass by high-temperature chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Bergmann, R. B.; Brendel, R.; Wolf, M.; Lölgen, P.; Krinke, J.; Strunk, H. P.; Werner, J. H.

    1997-02-01

    Covering glass substrates with polycrystalline Si films for electronic devices such as solar cells still presents a great challenge. In a two-step process, we first coat a novel high-temperature resistant glass substrate with a thin film of amorphous Si, which is then solid-phase crystallized at 0268-1242/12/2/012/img9. In the second step, atmospheric pressure chemical vapour deposition at 0268-1242/12/2/012/img10 serves to deposit a several micron thick light-absorbing film. The minority carrier diffusion length in our films correlates with the area weighted grain size determined by transmission electron microscopy. We obtain a hole mobility of 0268-1242/12/2/012/img11 after hydrogen passivation and an electron diffusion length of 0268-1242/12/2/012/img12.

  17. The use of cationic surfactants to control the structure of zinc oxide films prepared by chemical vapour deposition.

    PubMed

    McNally, Ciara S; Turner, David P; Kulak, Alex N; Meldrum, Fiona C; Hyett, Geoffrey

    2012-02-01

    This paper describes a powerful and versatile new method for controlling the structure of zinc oxide thin films prepared by aerosol assisted chemical vapour deposition, based on the use of a common surfactant. The technique combines the benefits of solution and vapour based methods and leads to high quality morphologically-defined and orientated thin films. This journal is © The Royal Society of Chemistry 2012

  18. Single-source precursor for chemical vapour deposition of collapsed boron nitride nanotubes

    NASA Astrophysics Data System (ADS)

    Tang, Chengchun; Bando, Yoshio; Shen, Guozhen; Zhi, Chunyi; Golberg, Dmitri

    2006-12-01

    Ammonium tetrafluoroborate, a cheap and commonly used chemical, was successfully utilized in this study to synthesize BN-coated MgF2 nanowires and collapsed BN nanotubes, although previous investigations have indicated that the compound cannot be used as a chemical vapour deposition (CVD) reaction precursor of amorphous or crystalline BN. Our study reveals that when MgCl2 is used as a promoter a crystalline BN phase can be obtained on a large scale. The MgCl2 also controls the product morphology, resulting in collapsed BN-coated MgF2 nanowires at the first stage of CVD. The detailed morphology of the composite nanowires also depends on the reaction temperature. Increase in temperature stimulates the nanowire formation. The MgF2 inclusions can be fully removed via a simple high-temperature evaporation procedure, forming collapsed BN nanotubes of high purity and yield.

  19. Patterned synthesis of laterally oriented ultrafine ZnO nanowires by controlled metalorganic chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Lee, D. H.; Son, K.; Park, W. I.

    2010-06-01

    Selective and lateral growth of ultrafine ZnO nanowires using metalorganic chemical vapour deposition (MOCVD) is studied. For selective growth of ZnO nanowires, oxidized substrates were patterned with Au layers, which serve as nucleation sites for the initial stage of ZnO nanowire growth. Electron microscopy confirmed that ultrafine ZnO nanowires with a mean diameter in the range ~8-20 nm were rooted selectively in Au patterns and laterally extended to several micrometres on the substrate surfaces. Interestingly, nanowire bridges crosslinking the Au patterns or nanowire link-ups were frequently observed, indicating that self-organizing electrical interconnects and optical networks can be developed. Photoresponse measurements showed that exposure of the ultrafine ZnO nanowires to ultraviolet light rapidly increased the channel current from ~150 to ~400 nA at an applied bias voltage of 1 V.

  20. A mechanism for crystal twinning in the growth of diamond by chemical vapour deposition.

    PubMed

    Butler, James E; Oleynik, Ivan

    2008-01-28

    A model for the formation of crystal twins in chemical vapour deposited diamond materials is presented. The twinning mechanism originates from the formation of a hydrogen-terminated four carbon atom cluster on a local {111} surface morphology, which also serves as a nucleus to the next layer of growth. Subsequent growth proceeds by reaction at the step edges with one and two carbon atom-containing species. The model also provides an explanation for the high defect concentration observed in 111 growth sectors, the formation of penetration and contact twins, and the dramatic enhancement in polycrystalline diamond growth rates and morphology changes when small amounts of nitrogen are added to the plasma-assisted growth environments.

  1. Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restoration

    NASA Astrophysics Data System (ADS)

    Chang, Sung-Jin; Hyun, Moon Seop; Myung, Sung; Kang, Min-A.; Yoo, Jung Ho; Lee, Kyoung G.; Choi, Bong Gill; Cho, Youngji; Lee, Gaehang; Park, Tae Jung

    2016-03-01

    Understanding the underlying mechanisms involved in graphene growth via chemical vapour deposition (CVD) is critical for precise control of the characteristics of graphene. Despite much effort, the actual processes behind graphene synthesis still remain to be elucidated in a large number of aspects. Herein, we report the evolution of graphene properties during in-plane growth of graphene from reduced graphene oxide (RGO) on copper (Cu) via methane CVD. While graphene is laterally grown from RGO flakes on Cu foils up to a few hundred nanometres during CVD process, it shows appreciable improvement in structural quality. The monotonous enhancement of the structural quality of the graphene with increasing length of the graphene growth from RGO suggests that seeded CVD growth of graphene from RGO on Cu surface is accompanied by the restoration of graphitic structure. The finding provides insight into graphene growth and defect reconstruction useful for the production of tailored carbon nanostructures with required properties.

  2. Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restoration.

    PubMed

    Chang, Sung-Jin; Hyun, Moon Seop; Myung, Sung; Kang, Min-A; Yoo, Jung Ho; Lee, Kyoung G; Choi, Bong Gill; Cho, Youngji; Lee, Gaehang; Park, Tae Jung

    2016-03-10

    Understanding the underlying mechanisms involved in graphene growth via chemical vapour deposition (CVD) is critical for precise control of the characteristics of graphene. Despite much effort, the actual processes behind graphene synthesis still remain to be elucidated in a large number of aspects. Herein, we report the evolution of graphene properties during in-plane growth of graphene from reduced graphene oxide (RGO) on copper (Cu) via methane CVD. While graphene is laterally grown from RGO flakes on Cu foils up to a few hundred nanometres during CVD process, it shows appreciable improvement in structural quality. The monotonous enhancement of the structural quality of the graphene with increasing length of the graphene growth from RGO suggests that seeded CVD growth of graphene from RGO on Cu surface is accompanied by the restoration of graphitic structure. The finding provides insight into graphene growth and defect reconstruction useful for the production of tailored carbon nanostructures with required properties.

  3. Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restoration

    PubMed Central

    Chang, Sung-Jin; Hyun, Moon Seop; Myung, Sung; Kang, Min-A; Yoo, Jung Ho; Lee, Kyoung G.; Choi, Bong Gill; Cho, Youngji; Lee, Gaehang; Park, Tae Jung

    2016-01-01

    Understanding the underlying mechanisms involved in graphene growth via chemical vapour deposition (CVD) is critical for precise control of the characteristics of graphene. Despite much effort, the actual processes behind graphene synthesis still remain to be elucidated in a large number of aspects. Herein, we report the evolution of graphene properties during in-plane growth of graphene from reduced graphene oxide (RGO) on copper (Cu) via methane CVD. While graphene is laterally grown from RGO flakes on Cu foils up to a few hundred nanometres during CVD process, it shows appreciable improvement in structural quality. The monotonous enhancement of the structural quality of the graphene with increasing length of the graphene growth from RGO suggests that seeded CVD growth of graphene from RGO on Cu surface is accompanied by the restoration of graphitic structure. The finding provides insight into graphene growth and defect reconstruction useful for the production of tailored carbon nanostructures with required properties. PMID:26961409

  4. Some considerations of the thermodynamics and kinetics of the chemical vapour deposition of tungsten

    NASA Astrophysics Data System (ADS)

    Hitchman, Michael L.; Jobson, Andrew D.; Kwakman, Loek F. Tz.

    1989-09-01

    The possibility of the chemical vapour deposition of tungsten for metallisation for microelectronic applications has been considered and investigated for about twenty years, but the process still remains problematical and has serious limitations. Many of the difficulties arise from a lack of a good understanding of the chemistry of the processes and on the effect of that chemistry on layer properties and characteristics. In particular, the very limited information about the thermodynamics and kinetics of the processes allows little more than an empirical approach to the control of reaction parameters or reactor design. In this paper we review the two predominant reactions of silicon and hydrogen reduction of tungsten hexafluoride and we make some observations and comments on the thermodynamics and kinetics of the two reactions. We also review the chemistry of selective deposition of tungsten. However, in order to fully exploit the chemistry of the deposition processes it is pointed out that for both basic studies and applications it is necessary to make use of high vacuum technology in order to minimise the effect of atmospheric impurities, particularly water, and reaction by-products.

  5. Wetting behaviour of carbon nitride nanostructures grown by plasma enhanced chemical vapour deposition technique

    NASA Astrophysics Data System (ADS)

    Ahmad Kamal, Shafarina Azlinda; Ritikos, Richard; Abdul Rahman, Saadah

    2015-02-01

    Tuning the wettability of various coating materials by simply controlling the deposition parameters is essential for various specific applications. In this work, carbon nitride (CNx) films were deposited on silicon (1 1 1) substrates using radio-frequency plasma enhanced chemical vapour deposition employing parallel plate electrode configuration. Effects of varying the electrode distance (DE) on the films' structure and bonding properties were investigated using Field emission scanning electron microscopy, Atomic force microscopy, Fourier transform infrared and X-ray photoemission spectroscopy. The wettability of the films was analyzed using water contact angle measurements. At high DE, the CNx films' surface was smooth and uniform. This changed into fibrous nanostructures when DE was decreased. Surface roughness of the films increased with this morphological transformation. Nitrogen incorporation increased with decrease in DE which manifested the increase in both relative intensities of Cdbnd N to Cdbnd C and Nsbnd H to Osbnd H bonds. sp2-C to sp3-C ratio increased as DE decreased due to greater deformation of sp2 bonded carbon at lower DE. The films' characteristics changed from hydrophilic to super-hydrophobic with the decrease in DE. Roughness ratio, surface porosity and surface energy calculated from contact angle measurements were strongly dependent on the morphology, surface roughness and bonding properties of the films.

  6. Titanium oxide thin films obtained with physical and chemical vapour deposition methods for optical biosensing purposes.

    PubMed

    Dominik, M; Leśniewski, A; Janczuk, M; Niedziółka-Jönsson, J; Hołdyński, M; Wachnicki, Ł; Godlewski, M; Bock, W J; Śmietana, M

    2017-07-15

    This work discusses an application of titanium oxide (TiOx) thin films deposited using physical (reactive magnetron sputtering, RMS) and chemical (atomic layer deposition, ALD) vapour deposition methods as a functional coating for label-free optical biosensors. The films were applied as a coating for two types of sensors based on the localised surface plasmon resonance (LSPR) of gold nanoparticles deposited on a glass plate and on a long-period grating (LPG) induced in an optical fibre. Optical and structural properties of the TiOx thin films were investigated and discussed. It has been found that deposition method has a significant influence on optical properties and composition of the films, but negligible impact on TiOx surface silanization effectiveness. A higher content of oxygen with lower Ti content in the ALD films leads to the formation of layers with higher refractive index and slightly higher extinction coefficient than for the RMS TiOx. Moreover, application of the TiOx film independently on deposition method enables not only for tuning of the spectral response of the investigated biosensors, but also in case of LSPR for enhancing the ability for biofunctionalization, i.e., TiOx film mechanically protects the nanoparticles and induces change in the biofunctionalization procedure to the one typical for oxides. TiOx coated LSPR and LPG sensors with refractive index sensitivity of close to 30 and 3400nm/RIU, respectively, were investigated. The ability for molecular recognition was evaluated with the well-known complex formation between avidin and biotin as a model system. The shift in resonance wavelength reached 3 and 13.2nm in case of LSPR and LPG sensors, respectively. Any modification in TiOx properties resulting from the biofunctionalization process can be also clearly detected.

  7. In-line silicon epitaxy for photovoltaics using a continous chemical vapour deposition reactor.

    PubMed

    Keller, Martin; Reber, Stefan; Schillinger, Norbert; Pocza, David; Arnold, Martin

    2011-09-01

    Thin film solar cell techniques can effectively reduce the costs for photovoltaic solar power. However, most of these techniques still have the disadvantage of a comparatively low efficiency. One way to realize a thin film solar cell concept with high efficiency potential is the crystalline silicon thin-film (cSiTF) concept. Following the high-temperature approach, this concept is based on a silicon epitaxy process. This paper reports the current status of the development of a high throughput epitaxy tool at Fraunhofer ISE and presents first results. Also presented is the development of a simulation tool which is a virtual image of the real setup in order to forecast save deposition conditions. The presented epitaxy tool is the ConCVD (Continuous Chemical Vapour Deposition), in which an improved reactor setup has been installed, based on the experience gained so far. To provide insight into upcoming further advances, the industrial scale epitaxy tool ProConCVD is presented as well.

  8. Epitaxial chemical vapour deposition growth of monolayer hexagonal boron nitride on a Cu(111)/sapphire substrate.

    PubMed

    Uchida, Yuki; Iwaizako, Tasuku; Mizuno, Seigi; Tsuji, Masaharu; Ago, Hiroki

    2017-03-22

    Hexagonal boron nitride (h-BN), an atomically thin insulating material, shows a large band gap, mechanical flexibility, and optical transparency. It can be stacked with other two-dimensional (2D) materials through van der Waals interactions to form layered heterostructures. These properties promise its application as an insulating layer of novel 2D electronic devices due to its atomically smooth surface with a large band gap. Herein, we demonstrated the ambient-pressure chemical vapour deposition (CVD) growth of high-quality, large-area monolayer h-BN on a Cu(111) thin film deposited on a c-plane sapphire using ammonia borane (BH3NH3) as the feedstock. Highly oriented triangular h-BN grains grow on Cu(111), which finally coalescence to cover the entire Cu surface. Low-energy electron diffraction (LEED) measurements indicated that the hexagonal lattice of the monolayer h-BN is well-oriented along the underlying Cu(111) lattice, thus implying the epitaxial growth of h-BN, which can be applied in various 2D electronic devices.

  9. Methyldichloroborane evidenced as an intermediate in the chemical vapour deposition synthesis of boron carbide.

    PubMed

    Reinisch, G; Patel, S; Chollon, G; Leyssale, J-M; Alotta, D; Bertrand, N; Vignoles, G L

    2011-09-01

    The most recent ceramic-matrix composites (CMC) considered for long-life applications as thermostructural parts in aerospace propulsion contain, among others, boron-rich phases like boron carbide. This compound is prepared by thermal Chemical Vapour Infiltration (CVI), starting from precursors like boron halides and hydrocarbons. We present a study aiming at a precise knowledge of the gas-phase composition in a hot-zone LPCVD reactor fed with BCl3, CH4 and H2, which combines experimental and theoretical approaches. This work has brought strong evidences of the presence of Methydichloroborane (MDB, BCl2CH3) in the process. It is demonstrated that this intermediate, the presence of which had never been formally proved before, appears for processing temperatures slightly lower than the deposition temperature of boron carbide. The study features quantum chemical computations, which provide several pieces of information like thermochemical and kinetic data, as well as vibration and rotation frequencies, reaction kinetics computations, and experimental gas-phase characterization of several species by FTIR, for several processing parameter sets. The main results are presented, and the place of MDB in the reaction scheme is discussed.

  10. Alumina coating on dense tungsten powder by fluidized bed metal organic chemical vapour deposition.

    PubMed

    Rodriguez, Philippe; Caussat, Brigitte; Ablitzer, Carine; Iltis, Xavière; Brothier, Meryl

    2011-09-01

    In order to study the feasibility of coating very dense powders by alumina using Fluidized Bed Metal Organic Chemical Vapour Deposition (FB-MOCVD), experiments were performed on a commercial tungsten powder, 75 microm in median volume diameter and 19,300 kg/m3 in grain density. The first part of the work was dedicated to the experimental study of the tungsten powder fluidization using argon as carrier gas at room temperature and at 400 degrees C. Due to the very high density of the tungsten powder, leading to low initial fixed bed heights and low bed expansions, different weights of powder were tested in order to reach satisfactory temperature profiles along the fluidized bed. Then, using argon as a fluidized bed former and aluminium acetylacetonate Al(C5O2H7)3 as a single source precursor, alumina thin films were deposited on tungsten particles at a low temperature range (e.g., 370-420 degrees C) by FB-MOCVD. The influence of the weight of powder, bed temperature and run duration was studied. Characterizations of the obtained samples were performed by various techniques including scanning electron microscopy (SEM) coupled with Energy Dispersive X-ray Spectroscopy (EDS) analyses, Field Emission Gun SEM (FEG-SEM) and Fourier Transform InfraRed (FT-IR) spectroscopy. The different analyses indicated that tungsten particles were uniformly coated by a continuous alumina thin film. The thickness of the film ranged between 25 and 80 nm, depending on the coating conditions. The alumina thin films were amorphous and contained carbon contamination. This latter may correspond to the adsorption of species resulting from incomplete decomposition of the precursor at so low deposition temperature.

  11. Si-nanocrystal-based LEDs fabricated by ion implantation and plasma-enhanced chemical vapour deposition.

    PubMed

    Perálvarez, M; Barreto, J; Carreras, Josep; Morales, A; Navarro-Urrios, D; Lebour, Y; Domínguez, C; Garrido, B

    2009-10-07

    An in-depth study of the physical and electrical properties of Si-nanocrystal-based MOSLEDs is presented. The active layers were fabricated with different concentrations of Si by both ion implantation and plasma-enhanced chemical vapour deposition. Devices fabricated by ion implantation exhibit a combination of direct current and field-effect luminescence under a bipolar pulsed excitation. The onset of the emission decreases with the Si excess from 6 to 3 V. The direct current emission is attributed to impact ionization and is associated with the reasonably high current levels observed in current-voltage measurements. This behaviour is in good agreement with transmission electron microscopy images that revealed a continuous and uniform Si nanocrystal distribution. The emission power efficiency is relatively low, approximately 10(-3)%, and the emission intensity exhibits fast degradation rates, as revealed from accelerated ageing experiments. Devices fabricated by chemical deposition only exhibit field-effect luminescence, whose onset decreases with the Si excess from 20 to 6 V. The absence of the continuous emission is explained by the observation of a 5 nm region free of nanocrystals, which strongly reduces the direct current through the gate. The main benefit of having this nanocrystal-free region is that tunnelling current flow assisted by nanocrystals is blocked by the SiO2 stack so that power consumption is strongly reduced, which in return increases the device power efficiency up to 0.1%. In addition, the accelerated ageing studies reveal a 50% degradation rate reduction as compared to implanted structures.

  12. Al-Cu intermetallic coatings processed by sequential metalorganic chemical vapour deposition and post-deposition annealing

    NASA Astrophysics Data System (ADS)

    Aloui, Lyacine; Duguet, Thomas; Haidara, Fanta; Record, Marie-Christine; Samélor, Diane; Senocq, François; Mangelinck, Dominique; Vahlas, Constantin

    2012-06-01

    Sequential processing of aluminum and copper followed by reactive diffusion annealing is used as a paradigm for the metalorganic chemical vapour deposition (MOCVD) of coatings containing intermetallic alloys. Dimethylethylamine alane and copper N,N'-di-isopropylacetamidinate are used as aluminum and copper precursors, respectively. Deposition is performed on steel and silica substrates at 1.33 kPa and 493-513 K. Different overall compositions in the entire range of the Al-Cu phase diagram are obtained by varying the relative thickness of the two elemental layers while maintaining the overall thickness of the coating close to 1 μm. As-deposited films present a rough morphology attributed to the difficulty of copper to nucleate on aluminum. Post-deposition annealing is monitored by in situ X-ray diffraction, and allows smoothening the microstructure and identifying conditions leading to several Al-Cu phases. Our results establish a proof of principle following which MOCVD of metallic alloys is feasible, and are expected to extend the materials pool for numerous applications, with innovative thin film processing on, and surface properties of complex in shape parts.

  13. Assessment of conservative weighting scheme in simulating chemical vapour deposition with trace species

    NASA Astrophysics Data System (ADS)

    Wu, J.-S.; Hsiao, W.-J.; Lian, Y.-Y.; Tseng, K.-C.

    2003-09-01

    Low-pressure or ultra-high vacuum chemical vapour deposition often involves important trace species in both gas-phase and surface reactions. The conservative weighting scheme (J. Thermophys. Heat Transfer 1996; 10(4) : 579) has been used to deal with the trace species often involved in some non-reactive physical processes, which is otherwise considered computationally impossible using the conventional DSMC method. This conservative weighting scheme (CWS) improves greatly the statistical uncertainties by decreasing the weighting factors of trace-species particles and ensures the conservation of both momentum and energy between two colliding particles with large difference of weighting factors. This CWS is further extended to treat reactive processes for gas-phase and surface reactions with trace species, which is called extended conservative weighting scheme (ECWS). A single-cell equilibrium simulation is performed for verifying both the CWS and ECWS in treating trace species. The results of using CWS show that it is most efficient and accurate for weight ratio (trace to non-trace) equal to or less than 0.01 for flows with two and three species. The results of a single-cell simulation using ECWS for gas-phase reaction and surface reactions show that only ECWS can produce acceptable results with reasonable computational time.

  14. Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

    PubMed Central

    Lafont, F.; Ribeiro-Palau, R.; Kazazis, D.; Michon, A.; Couturaud, O.; Consejo, C.; Chassagne, T.; Zielinski, M.; Portail, M.; Jouault, B.; Schopfer, F.; Poirier, W.

    2015-01-01

    Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within 10−9 in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by Si sublimation, under higher magnetic fields. Here, we report on a graphene device grown by chemical vapour deposition on SiC, which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron-density devices. PMID:25891533

  15. Chemical Vapour Deposition of Graphene with Re-useable Pt and Cu substrates for Flexible Electronics

    NASA Astrophysics Data System (ADS)

    Karamat, Shumaila; Sonusen, Selda; Celik, Umit; Uysalli, Yigit; Oral, Ahmet

    2015-03-01

    Graphene has gained the attention of scientific world due to its outstanding physical properties. The future demand of flexible electronics such as solar cells, light emitting diodes, photo-detectors and touch screen technology requires more exploration of graphene properties on flexible substrates. The most interesting application of graphene is in organic light emitting diodes (OLED) where efforts are in progress to replace brittle indium tin oxide (ITO) electrode with a flexible graphene electrode because ITO raw materials are becoming increasingly expensive, and its brittle nature makes it unsuitable for flexible devices. In this work, we grow graphene on Pt and Cu substrates using chemical vapour deposition (CVD) and transferred it to a polymer material (PVA) using lamination technique. We used hydrogen bubbling method for separating graphene from Pt and Cu catalyst to reuse the substrates many times. After successful transfer of graphene on polymer samples, we checked the resistivity values of the graphene sheet which varies with growth conditions. Furthermore, Raman, atomic force microscopy (AFM), I-V and Force-displacement measurements will be presented for these samples.

  16. Synthesis of few-layer graphene via microwave plasma-enhanced chemical vapour deposition.

    PubMed

    Malesevic, Alexander; Vitchev, Roumen; Schouteden, Koen; Volodin, Alexander; Zhang, Liang; Tendeloo, Gustaaf Van; Vanhulsel, Annick; Haesendonck, Chris Van

    2008-07-30

    If graphene is ever going to live up to the promises of future nanoelectronic devices, an easy and cheap route for mass production is an essential requirement. A way to extend the capabilities of plasma-enhanced chemical vapour deposition to the synthesis of freestanding few-layer graphene is presented. Micrometre-wide flakes consisting of four to six atomic layers of stacked graphene sheets have been synthesized by controlled recombination of carbon radicals in a microwave plasma. A simple and highly reproducible technique is essential, since the resulting flakes can be synthesized without the need for a catalyst on the surface of any substrate that withstands elevated temperatures up to 700 °C. A thorough structural analysis of the flakes is performed with electron microscopy, x-ray diffraction, Raman spectroscopy and scanning tunnelling microscopy. The resulting graphene flakes are aligned vertically to the substrate surface and grow according to a three-step process, as revealed by the combined analysis of electron microscopy and x-ray photoelectron spectroscopy.

  17. Electrical Conduction Mechanism in Chemical Vapour Deposition Grown Multi-Wall Carbon Nanotubes Film.

    PubMed

    Al-Hazmi, F S

    2015-07-01

    Multi-walled carbon nanotubes are interesting systems where different aspects of conduction are observed, mostly due to their low dimensionalities and small dimensions. Electrical conduction mechanism in multi wall carbon nanotubes film is studied. The studied multi-walled nanotubes are grown by a low pressure chemical vapour deposition system. To understand the conduction mechanism in these nanotubes, temperature dependence of conductivity of the multi wall nanotubes film over a temperature range of (400-200 K) is studied. On the basis of the results, one may suggest the thermally activated conduction mechanism for the temperature range (400-300 K). The low temperature data is fitted with the hopping conduction for the transport of charge carriers in the temperature range of 300-200 K. This hopping conduction mechanism is characterized by variable range hopping (VRH), which shows complete agreement with the Mott's type of VRH mechanism. Applying this model, a number of Mott's parameters such as density of states, hopping distance, hopping energy are calculated. The calculated values of all the studied parameters matches well the reported results on other multi-wall nanotubes film.

  18. Microstructural and conductivity changes induced by annealing of ZnO:B thin films deposited by chemical vapour deposition.

    PubMed

    David, C; Girardeau, T; Paumier, F; Eyidi, D; Lacroix, B; Papathanasiou, N; Tinkham, B P; Guérin, P; Marteau, M

    2011-08-24

    Zinc oxide (ZnO) thin films have attracted much attention in recent years due to progress in crystal growth for a large variety of technological applications including optoelectronics and transparent electrodes in solar cells. Boron (B)-doped ZnO thin films are deposited by low pressure chemical vapour deposition (LPCVD) on Si(100). These films exhibit a strong (002) texture with a pyramidal grain structure. The ZnO films were annealed after growth; the annealing temperature and the atmosphere appear to strongly impact the layer conductivity. This work will first present the modification of the physical properties (carrier concentration, mobility) extracted from the simulation of layer reflection in the infrared range. At low annealing temperatures the mobility increases slightly before decreasing drastically above a temperature close to 250 °C. The chemical and structural evolution (XPS, x-ray diffraction) of the films was also studied to identify the relationship between microstructural modifications and the variations observed in the film conductivity. An in situ XRD study during annealing has been performed under air and low pressure conditions. As observed for electrical properties, the microstructural modifications shift to higher temperatures for vacuum annealing.

  19. Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

    NASA Astrophysics Data System (ADS)

    Liu, A. Y.; Sun, C.; Markevich, V. P.; Peaker, A. R.; Murphy, J. D.; Macdonald, D.

    2016-11-01

    It is known that the interstitial iron concentration in silicon is reduced after annealing silicon wafers coated with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The underlying mechanism for the significant iron reduction has remained unclear and is investigated in this work. Secondary ion mass spectrometry (SIMS) depth profiling of iron is performed on annealed iron-contaminated single-crystalline silicon wafers passivated with PECVD silicon nitride films. SIMS measurements reveal a high concentration of iron uniformly distributed in the annealed silicon nitride films. This accumulation of iron in the silicon nitride film matches the interstitial iron loss in the silicon bulk. This finding conclusively shows that the interstitial iron is gettered by the silicon nitride films during annealing over a wide temperature range from 250 °C to 900 °C, via a segregation gettering effect. Further experimental evidence is presented to support this finding. Deep-level transient spectroscopy analysis shows that no new electrically active defects are formed in the silicon bulk after annealing iron-containing silicon with silicon nitride films, confirming that the interstitial iron loss is not due to a change in the chemical structure of iron related defects in the silicon bulk. In addition, once the annealed silicon nitride films are removed, subsequent high temperature processes do not result in any reappearance of iron. Finally, the experimentally measured iron decay kinetics are shown to agree with a model of iron diffusion to the surface gettering sites, indicating a diffusion-limited iron gettering process for temperatures below 700 °C. The gettering process is found to become reaction-limited at higher temperatures.

  20. Textured fluorine-doped tin dioxide films formed by chemical vapour deposition.

    PubMed

    Bhachu, Davinder S; Waugh, Mathew R; Zeissler, Katharina; Branford, Will R; Parkin, Ivan P

    2011-10-04

    The use of an aerosol delivery system enabled fluorine-doped tin dioxide films to be formed from monobutyltin trichloride methanolic solutions at 350-550 °C with enhanced functional properties compared with commercial standards. It was noted that small aerosol droplets (0.3 μm) gave films with better figures of merit than larger aerosol droplets (45 μm) or use of a similar precursor set using atmospheric pressure chemical vapour deposition (CVD) conditions. Control over the surface texturing and physical properties of the thin films were investigated by variation in the deposition temperature and dopant concentration. Optimum deposition conditions for low-emissivity coatings were found to be at a substrate temperature of about 450 °C with a dopant concentration of 1.6 atm% (30 mol% F:Sn in solution), which resulted in films with a low visible light haze value (1.74%), a high charge-carrier mobility (25 cm(2) V s(-1)) and a high charge-carrier density (5.7×10(20) cm(-3)) resulting in a high transmittance across the visible (≈80%), a high reflectance in the IR (80% at 2500 nm) and plasma-edge onset at 1400 nm. Optimum deposition conditions for coatings with applications as top electrodes in thin film photovoltaics were found to be a substrate temperature of about 500 °C with a dopant concentration of 2.2 atm% (30 mol% F:Sn in solution), which resulted in films with a low sheet resistance (3 Ω sq(-1)), high charge-carrier density (6.4×10(20) cm(-3)), a plasma edge onset of 1440 nm and the films also showed pyramidal surface texturing on the micrometer scale which corresponded to a high visible light haze value (8%) for light scattering and trapping within thin film photovoltaic devices. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Tuning the conditions for the deposition of nanocrystalline diamond by hot filament chemical vapour deposition.

    PubMed

    Santos, J A; Ranjbar, Samaneh; Neto, V F; Ruch, D; Grácio, J

    2012-08-01

    Although large focus has been placed into the deposition of nanocrystalline and ultra-nanocrystalline diamond films, most of this research uses microwave plasma assisted CVD systems. However, the growth conditions used in microwave systems cannot be directly used in hot-filament CVD systems. This paper, aims to enlarge the knowledge of the diamond film depositing process. H2/CH4/Ar gas mixtures have been used to deposit micro, nano and ultra-nanocrystalline diamond films by hot-filament CVD systems. Additionally, the distance between the filaments array and the substrate was varied, in order to observe its effect and consequently the effect of a lower substrate temperature in the nucleation density and deposition. All the samples were characterized for microstructure and quality, using scanning electron microscopy and Raman spectroscopy.

  2. The Role of Plasma in Plasma Enhanced Chemical Vapour Deposition of Nanostructure Growth

    NASA Technical Reports Server (NTRS)

    Hash, David B.; Meyyappan, M.; Teo, Kenneth B. K.; Lacerda, Rodrigo G.; Rupesinghe, Nalin L.

    2004-01-01

    Chemical vapour deposition (CVD) has become the preferred process for high yield growth of carbon nanotubes and nanofibres because of its ability to pattern growth through lithographic positioning of transition metal catalysts on substrates. Many potential applications of nanotubes such as field emitters [1] require not only patterned growth but also vertical alignment. Some degree of ali,ment in thermal CVD processes can be obtained when carbon nanotubes are grown closely together as a result of van der Waals interactions. The ali,onment however is marginal, and the van der Waals prerequisite makes growth of freestanding nanofibres with thermal CVD unrealizable. The application of electric fields as a means of ali,onment has been shown to overcome this limitation [2-5], and highly aligned nanostructures can be grown if electric fields on the order of 0.5 V/microns are employed. Plasma enhanced CVD in various configurations including dc, rf, microwave, inductive and electron cyclotron resonance has been pursued as a means of enabling alignment in the CVD process. However, the sheath fields for the non-dc sources are in general not sufficient for a high degree of ali,pment and an additional dc bias is usually applied to the growth substrate. This begs the question as to the actual role of the plasma. It is clear that the plasma itself is not required for aligned growth as references [3] and [4] employed fields through small applied voltages (3-20 V) across very small electrode spacings (10-100 microns) and thus avoided striking a discharge.

  3. Temporal Stability of Metal-Chloride-Doped Chemical-Vapour-Deposited Graphene.

    PubMed

    Kang, Moon H; Milne, William I; Cole, Matthew T

    2016-08-18

    Graphene has proven to be a promising material for transparent flexible electronics. In this study, we report the development of a transfer and doping scheme of large-area chemical vapour deposited (CVD) graphene. A technique to transfer the as-grown material onto mechanically flexible and optically transparent polymeric substrates using an ultraviolet adhesive (UVA) is outlined, along with the temporal stability of the sheet resistance and optical transparency following chemical doping with various metal chlorides (Mx Cly The sheet resistance (RS ) and 550 nm optical transparency (%T550 ) of the transferred un-doped graphene was 3.5 kΩ sq(-1) (±0.2 kΩ sq(-1) ) and 84.1 % (±2.9 %), respectively. Doping with AuCl3 showed a notable reduction in RS by some 71.4 % (to 0.93 kΩ sq(-1) ) with a corresponding %T550 of 77.0 %. After 200 h exposure to air at standard temperature and pressure, the increase in RS was found to be negligible (ΔRS AuCl3 =0.06 kΩ sq(-1) ), indicating that, of the considered Mx Cly species, AuCl3 doping offered the highest degree of time stability under ambient conditions. There appears a tendency of increasing RS with time for the remaining metal chlorides studied. We attribute the observed temporal shift to desorption of molecular dopants. We find that desorption was most significant in RhCl3 -doped samples whereas, in contrast, after 200 h in ambient conditions, AuCl3 -doped graphene showed only marginal desorption. The results of this study demonstrate that chemical doping of UVA-transferred graphene is a promising means for enhancing large-area CVD graphene in order to realise a viable platform for next-generation optically transparent and mechanically flexible electronics.

  4. Chemical vapour deposition of tungsten oxide thin films from single-source precursors

    NASA Astrophysics Data System (ADS)

    Cross, Warren Bradley

    This thesis describes the chemical vapour deposition (CVD) of tungsten oxide thin films on glass from a wide range of single-source precursors. Chapter 1 describes previous work that has motivated this research. Chapter 2 discusses the synthesis of conventional style candidates for single-source precursors. Reactions of WOCl4 with 3-methyl salicylic acid (MesaliH2) and 3,5-di-iso-propyl salicylic acid (di-i-PrsaliH2) yielded the ditungsten complexes [WO(Mesali)(MesaliH)2(mu-O)], 1, and [WO(di-i-Prsali)(di-i-PrsaliH)2(mu-O)], 2, and the monotungsten complex [WO(di-i-Pr sali)(di-i-PrsaliH)Cl], 3. Tungsten(VI) dioxo complexes were prepared by ligand exchange reactions of [WO2(acac)2], 4, yielding [WO2(catH)2], 5, and [WO2(malt)2], 6, (catH2 = 3,5-di-tert-butyl-catechol; maltH = maltol). Chapter 3 describes thermal analyses of the complexes 1 - 6 and tungsten hexaphenoxide, and consequently their suitability for CVD. The use of [W(OPh)6] and 2 - 6 in aerosol assisted CVD is reported in Chapter 4. Brown tungsten oxide was deposited from 2 and 3 at 600 °C; blue partially-reduced WO3-x thin films were deposited from [W(OPh)6] from 300 to 500 °C, from 4 at 600 °C and 6 at 620 °C. Sintering all of the coatings in air at 550 °C afforded yellow films of stoichiometric WO3. Raman spectroscopy and glancing angle XRD showed that coatings deposited from [W(OPh)6] at 300 °C were amorphous, whereas all the other films were the monoclinic phase gamma-tungsten oxide. Taking full advantage of the aerosol vaporisation technique led to the CVD of tungsten oxide films from polyoxometalate single-source precursors, as described in Chapter 5. The isopolyanion [nBu4N]2[W6O19], 7, afforded WO3 at 410 °C; the heteropolyanions [nBu4N]4H3[PW11O39], 8, and [nBu4N]4[PNbW11O40], 9, were used to deposit doped WO3 thin films in a highly-controlled manner at 480 °C. Thus, the unprecedented use of large, charged clusters for CVD was demonstrated. Chapter 6 describes investigations of the

  5. Chemical vapour deposition of silicon under reduced pressure in a hot-wall reactor: Equilibrium and kinetics

    NASA Astrophysics Data System (ADS)

    Langlais, Francis; Hottier, François; Cadoret, Robert

    1982-02-01

    Silicon chemical vapour deposition (SiH 2Cl 2/H 2 system), under reduced pressure conditions, in a hot-wall reactor, is presented. The vapour phase composition is assessed by evaluating two distnct equilbria. The "homogeneous equilibrium", which assumes that the vapour phase is not in equilibrium with solid silicon, is thought to give an adequate description of the vapour phase in the case of low pressure, high gas velocities, good temperature homogeneity conditions. A comparison with "heterogeneous equilibrium" enables us to calculate the supersaturation so evidencing a highly irreversible growth system. The experimental determination of the growth rate reveals two distinct temperature ranges: below 1000°C, polycrystalline films are usually obtained with a thermally activated growth rate (+40 kcal mole -1) and a reaction order, with respect to the predominant species SiCl 2, close to one; above 1000°C, the films are always monocrystalline and their growth rate exhibits a much lower or even negative activation energy, the reaction order in SiCl 2 remaining about one.

  6. Chemical vapour deposition enhanced by atmospheric microwave plasmas: a large-scale industrial process or the next nanomanufacturing tool?

    NASA Astrophysics Data System (ADS)

    Belmonte, T.; Gries, T.; Cardoso, R. P.; Arnoult, G.; Kosior, F.; Henrion, G.

    2011-04-01

    This paper describes several specific aspects of atmospheric plasma deposition carried out with a microwave resonant cavity. Deposition over a wide substrate is first studied. We show that high deposition rates (several hundreds of μm h-1) are due to localization of fluxes on the substrate by convection when slightly turbulent flows are used. Next, we describe possible routes to localize deposition over a nanometre-sized area. Scaling down atmospheric plasma deposition is possible and two strategies to reach nanometre scales are described. Finally, we study self-organization of SiO2 nanodots deposited by chemical vapour deposition at atmospheric pressure enhanced by an Ar-O2 micro-afterglow operating at high temperature (>1200 K). When the film being deposited is thin enough (~500 nm) nanodots are obtained and they can be assembled into threads to create patterned surfaces. When the coating becomes thicker (~1 µm), and for relatively high content in HMDSO, SiO2 walls forming hexagonal cells are obtained.

  7. Modelling of infrared optical constants for polycrystalline low pressure chemical vapour deposition ZnO:B films

    NASA Astrophysics Data System (ADS)

    Prunici, P.; Hamelmann, F. U.; Beyer, W.; Kurz, H.; Stiebig, H.

    2013-03-01

    Doped zinc oxide films are of high interest in thin film solar cell technology for application as transparent conducting oxide. Rapid and detailed characterisation of ZnO thin film properties is required for quality control and optimisation of the deposited films. In the present work, a new model of dielectric functions based on the effective medium approximation (EMA) is developed and is applied for characterisation of polycrystalline boron doped zinc oxide (ZnO:B) films, deposited by low pressure chemical vapour deposition (LPCVD) technique onto glass substrates. The model takes into account that polycrystalline ZnO is considered to consist of crystal grains surrounded by depletion layers. Using this model and Fourier Transform Infrared Spectroscopy (FTIR) performed in reflection configuration over a wide mid-infrared spectral region (from 2 μm up to 25 μm), the properties of depletion layer and the bulk of the grains in ZnO can be rapidly characterised in detail, and the volume fraction of the depletion layer can be extracted. The results are in good agreement with previously presented theories of electron transport in polycrystalline materials. Using electrical measurements like conductivity and Hall techniques in addition to the optically determined parameters, predominant electron scattering mechanisms in polycrystalline films for different doping levels are identified. The measurements show the impact of the doping level on depletion layer of the crystallites. It is shown, furthermore, that under a water vapour rich environment the volume fraction of the depletion layer may increase up to 5 times and more, while the mobility of the charge carriers in the depletion layer drops drastically from about 31 cm2V-1s-1 to about 8 cm2V-1s-1. This indicates that water vapour exposure causes an increase of the potential barrier in the grain boundary depletion layer, limiting the electron transport across the grain boundaries to a classical thermionic emission

  8. Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene

    PubMed Central

    Kitzmann, Julia; Göritz, Alexander; Fraschke, Mirko; Lukosius, Mindaugas; Wenger, Christian; Wolff, Andre; Lupina, Grzegorz

    2016-01-01

    We investigate the use of perfluorodecyltrichlorosilane-based self-assembled monolayer as seeding layer for chemical vapour deposition of HfO2 on large area CVD graphene. The deposition and evolution of the FDTS-based seed layer is investigated by X-ray photoelectron spectroscopy, Auger electron spectroscopy, and transmission electron microscopy. Crystalline quality of graphene transferred from Cu is monitored during formation of the seed layer as well as the HfO2 growth using Raman spectroscopy. We demonstrate that FDTS-based seed layer significantly improves nucleation of HfO2 layers so that graphene can be coated in a conformal way with HfO2 layers as thin as 10 nm. Proof-of-concept experiments on 200 mm wafers presented here validate applicability of the proposed approach to wafer scale graphene device fabrication. PMID:27381715

  9. Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene

    NASA Astrophysics Data System (ADS)

    Kitzmann, Julia; Göritz, Alexander; Fraschke, Mirko; Lukosius, Mindaugas; Wenger, Christian; Wolff, Andre; Lupina, Grzegorz

    2016-07-01

    We investigate the use of perfluorodecyltrichlorosilane-based self-assembled monolayer as seeding layer for chemical vapour deposition of HfO2 on large area CVD graphene. The deposition and evolution of the FDTS-based seed layer is investigated by X-ray photoelectron spectroscopy, Auger electron spectroscopy, and transmission electron microscopy. Crystalline quality of graphene transferred from Cu is monitored during formation of the seed layer as well as the HfO2 growth using Raman spectroscopy. We demonstrate that FDTS-based seed layer significantly improves nucleation of HfO2 layers so that graphene can be coated in a conformal way with HfO2 layers as thin as 10 nm. Proof-of-concept experiments on 200 mm wafers presented here validate applicability of the proposed approach to wafer scale graphene device fabrication.

  10. Palm Oil as the Carbon Source for the Synthesis of Carbon Nanotubes using Floating Catalyst—Chemical Vapour Deposition Method

    NASA Astrophysics Data System (ADS)

    Zobir, S. A. M.; Suriani, A. B.; Khusaimi, Z.; Mamat, H.; Zainal, Z.; Sarijo, S. H.; Rusop, M.

    2011-03-01

    CNTs were synthesized using floating catalyst by dual-furnace thermal chemical vapour deposition method at 800-1000° C. Cooking oil made of palm oil was used as the carbon precursor. Ferrocene in the presence of 0.05 M zinc nitrate and a p-type silicon wafer was used as a catalyst precursor and a sample target, respectively. The deposition temperature was varied from 800-1000° C. Nitrogen gas was used as a gas carrier with a constant flow rate of 150 sccm/min. Field emission scanning electron micrographs show the formation of CNTs together with other carbons formed on the silicon substrate. Raman spectroscopy studies were also supported the formation of CNTs.

  11. Electric, dielectric and optical properties of Ga2O3 grown by metal organic chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Paskaleva, A.; Spassov, D.; Terziyska, P.

    2017-01-01

    Thin film (15-130 nm) of gallium oxide were grown by the industry relevant metal organic chemical vapour deposition (MOCVD) technique on p-type Si to check the possibility for integration of newly rediscovered wide bandgap material with the Si technology. Electric, dielectric and optical properties were studied and analyzed. To perform electrical characterization, Ga2O3 films were integrated into Al/Ga2O3/p-Si metal–oxide–semiconductor (MOS) capacitors. Relative dielectric permittivity, flat-band voltage shift and effective oxide charge density were obtained from C-V measurements. Spectroscopic ellipsometry measurements reveal that Ga2O3 deposited by MOCVD is a direct bandgap material with a large optical bandgap of about 5.1 eV. Both ellipsometrical and electrical results show formation of a thick interfacial SiO2.

  12. A novel three-jet microreactor for localized metal-organic chemical vapour deposition of gallium arsenide: design and simulation

    NASA Astrophysics Data System (ADS)

    Konakov, S. A.; Krzhizhanovskaya, V. V.

    2016-08-01

    We present a novel three-jet microreactor design for localized deposition of gallium arsenide (GaAs) by low-pressure Metal-Organic Chemical Vapour Deposition (MOCVD) for semiconductor devices, microelectronics and solar cells. Our approach is advantageous compared to the standard lithography and etching technology, since it preserves the nanostructure of the deposited material, it is less time-consuming and less expensive. We designed two versions of reactor geometry with a 10-micron central microchannel for precursor supply and with two side jets of a dilutant to control the deposition area. To aid future experiments, we performed computational modeling of a simplified-geometry (twodimensional axisymmetric) microreactor, based on Navier-Stokes equations for a laminar flow of chemically reacting gas mixture of Ga(CH3)3-AsH3-H2. Simulation results show that we can achieve a high-rate deposition (over 0.3 μm/min) on a small area (less than 30 μm diameter). This technology can be used in material production for microelectronics, optoelectronics, photovoltaics, solar cells, etc.

  13. N-type crystalline silicon films free of amorphous silicon deposited on glass by HCl addition using hot wire chemical vapour deposition.

    PubMed

    Chung, Yung-Bin; Park, Hyung-Ki; Lee, Sang-Hoon; Song, Jean-Ho; Hwang, Nong-Moon

    2011-09-01

    Since n-type crystalline silicon films have the electric property much better than those of hydrogenated amorphous and microcrystalline silicon films, they can enhance the performance of advanced electronic devices such as solar cells and thin film transistors (TFTs). Since the formation of amorphous silicon is unavoidable in the low temperature deposition of microcrystalline silicon on a glass substrate at temperatures less than 550 degrees C in the plasma-enhanced chemical vapour deposition and hot wire chemical vapour deposition (HWCVD), crystalline silicon films have not been deposited directly on a glass substrate but fabricated by the post treatment of amorphous silicon films. In this work, by adding the HCl gas, amorphous silicon-free n-type crystalline silicon films could be deposited directly on a glass substrate by HWCVD. The resistivity of the n-type crystalline silicon film for the flow rate ratio of [HCl]/[SiH4] = 7.5 and [PH3]/[SiH4] = 0.042 was 5.31 x 10(-4) ohms cm, which is comparable to the resistivity 1.23 x 10(-3) ohms cm of films prepared by thermal annealing of amorphous silicon films. The absence of amorphous silicon in the film could be confirmed by high resolution transmission electron microscopy.

  14. Aerosol assisted chemical vapour deposition of gas sensitive SnO2 and Au-functionalised SnO2 nanorods via a non-catalysed vapour solid (VS) mechanism

    PubMed Central

    Vallejos, Stella; Selina, Soultana; Annanouch, Fatima Ezahra; Gràcia, Isabel; Llobet, Eduard; Blackman, Chris

    2016-01-01

    Tin oxide nanorods (NRs) are vapour synthesised at relatively lower temperatures than previously reported and without the need for substrate pre-treatment, via a vapour-solid mechanism enabled using an aerosol-assisted chemical vapour deposition method. Results demonstrate that the growth of SnO2 NRs is promoted by a compression of the nucleation rate parallel to the substrate and a decrease of the energy barrier for growth perpendicular to the substrate, which are controlled via the deposition conditions. This method provides both single-step formation of the SnO2 NRs and their integration with silicon micromachined platforms, but also allows for in-situ functionalization of the NRs with gold nanoparticles via co-deposition with a gold precursor. The functional properties are demonstrated for gas sensing, with microsensors using functionalised NRs demonstrating enhanced sensing properties towards H2 compared to those based on non-functionalised NRs. PMID:27334232

  15. Probing the Gas-Phase Dynamics of Graphene Chemical Vapour Deposition using in-situ UV Absorption Spectroscopy.

    PubMed

    Shivayogimath, Abhay; Mackenzie, David; Luo, Birong; Hansen, Ole; Bøggild, Peter; Booth, Timothy J

    2017-07-21

    The processes governing multilayer nucleation in the chemical vapour deposition (CVD) of graphene are important for obtaining high-quality monolayer sheets, but remain poorly understood. Here we show that higher-order carbon species in the gas-phase play a major role in multilayer nucleation, through the use of in-situ ultraviolet (UV) absorption spectroscopy. These species are the volatilized products of reactions between hydrogen and carbon contaminants that have backstreamed into the reaction chamber from downstream system components. Consequently, we observe a dramatic suppression of multilayer nucleation when backstreaming is suppressed. These results point to an important and previously undescribed mechanism for multilayer nucleation, wherein higher-order gas-phase carbon species play an integral role. Our work highlights the importance of gas-phase dynamics in understanding the overall mechanism of graphene growth.

  16. Applying a potential difference to minimise damage to carbon fibres during carbon nanotube grafting by chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Anthony, David B.; Qian, Hui; Clancy, Adam J.; Greenhalgh, Emile S.; Bismarck, Alexander; Shaffer, Milo S. P.

    2017-07-01

    The application of an in situ potential difference between carbon fibres and a graphite foil counter electrode (300 V, generating an electric field ca 0.3-0.7 V μm-1), during the chemical vapour deposition synthesis of carbon nanotube (CNT) grafted carbon fibres, significantly improves the uniformity of growth without reducing the tensile properties of the underlying carbon fibres. Grafted CNTs with diameters 55 nm ± 36 nm and lengths around 10 μm were well attached to the carbon fibre surface, and were grown without the requirement for protective barrier coatings. The grafted CNTs increased the surface area to 185 m2 g-1 compared to the as-received sized carbon fibre 0.24 m2 g-1. The approach is not restricted to batch systems and has the potential to improve CNT grafted carbon fibre production for continuous processing.

  17. Sticking non-stick: Surface and Structure control of Diamond-like Carbon in Plasma Enhanced Chemical Vapour Deposition

    NASA Astrophysics Data System (ADS)

    Jones, B. J.; Nelson, N.

    2016-10-01

    This short review article explores the practical use of diamond-like carbon (DLC) produced by plasma enhanced chemical vapour deposition (PECVD). Using as an example issues relating to the DLC coating of a hand-held surgical device, we draw on previous works using atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, tensiometry and electron paramagnetic resonance. Utilising data from these techniques, we examine the surface structure, substrate-film interface and thin film microstructure, such as sp2/sp3 ratio (graphitic/diamond-like bonding ratio) and sp2 clustering. We explore the variations in parameters describing these characteristics, and relate these to the final device properties such as friction, wear resistance, and diffusion barrier integrity. The material and device characteristics are linked to the initial plasma and substrate conditions.

  18. Growth of large size diamond single crystals by plasma assisted chemical vapour deposition: Recent achievements and remaining challenges

    NASA Astrophysics Data System (ADS)

    Tallaire, Alexandre; Achard, Jocelyn; Silva, François; Brinza, Ovidiu; Gicquel, Alix

    2013-02-01

    Diamond is a material with outstanding properties making it particularly suited for high added-value applications such as optical windows, power electronics, radiation detection, quantum information, bio-sensing and many others. Tremendous progresses in its synthesis by microwave plasma assisted chemical vapour deposition have allowed obtaining single crystal optical-grade material with thicknesses of up to a few millimetres. However the requirements in terms of size, purity and crystalline quality are getting more and more difficult to achieve with respect to the forecasted applications, thus pushing the synthesis method to its scientific and technological limits. In this paper, after a short description of the operating principles of the growth technique, the challenges of increasing crystal dimensions both laterally and vertically, decreasing and controlling point and extended defects as well as modulating crystal conductivity by an efficient doping will be detailed before offering some insights into ways to overcome them.

  19. Growth of ZnO Nanorods on Stainless Steel Wire Using Chemical Vapour Deposition and Their Photocatalytic Activity

    PubMed Central

    Abd Aziz, Siti Nor Qurratu Aini; Pung, Swee-Yong; Ramli, Nurul Najiah; Lockman, Zainovia

    2014-01-01

    The photodegradation efficiency of ZnO nanoparticles in removal of organic pollutants deteriorates over time as a high percentage of the nanoparticles can be drained away by water during the wastewater treatment. This problem can be solved by growing the ZnO nanorods on stainless steel wire. In this work, ZnO nanorods were successfully grown on stainless steel wire by chemical vapour deposition. The SAED analysis indicates that ZnO nanorod is a single crystal and is preferentially grown in [0001] direction. The deconvoluted O 1s peak at 531.5 eV in XPS analysis is associated with oxygen deficient, revealing that the ZnO nanorods contain many oxygen vacancies. This observation is further supported by the finding of the small Iuv/Ivis ratio, that is, ~1 in the photoluminescence analysis. The growth of ZnO nanorods on stainless steel wire was governed by vapour-solid mechanism as there were no Fe particles observed at the tips of the nanorods. The photodegradation of Rhodamine B solution by ZnO nanorods followed the first-order kinetics. PMID:24587716

  20. Morphological and optical study of thin films of CuAlS2 deposited by metal organic chemical vapour deposition technique

    NASA Astrophysics Data System (ADS)

    Damisa, J.; Olofinjana, B.; Ebomwonyi, O.; Bakare, F.; Azi, S. O.

    2017-08-01

    Single solid source precursor of Copper-Aluminium dithiocarbamate was prepared and characterized by infrared spectroscopy. Thin films of copper aluminium sulphide were deposited on the substrate (soda lime glass) using metal organic chemical vapour deposition (MOCVD) technique within temperature ranges of 420 and 450 °C through the pyrolysis of the prepared precursor. Morphological and optical characterizations were then carried out. Morphological study carried out using scanning electron microscopy (SEM) showed that the deposited films are dense and polycrystalline in nature, uniform with the particle size distribution of the grains decreasing with increase in temperature. A direct optical energy gap of 3.28 and 2.88 eV were obtained for films deposited at 420 and 450 °C respectively. Other optical constants were found to increase as temperature increased.

  1. Osteoconductive Potential of Barrier NanoSiO2 PLGA Membranes Functionalized by Plasma Enhanced Chemical Vapour Deposition

    PubMed Central

    Terriza, Antonia; Vilches-Pérez, Jose I.; de la Orden, Emilio; Yubero, Francisco; Gonzalez-Caballero, Juan L.; González-Elipe, Agustin R.; Vilches, José; Salido, Mercedes

    2014-01-01

    The possibility of tailoring membrane surfaces with osteoconductive potential, in particular in biodegradable devices, to create modified biomaterials that stimulate osteoblast response should make them more suitable for clinical use, hopefully enhancing bone regeneration. Bioactive inorganic materials, such as silica, have been suggested to improve the bioactivity of synthetic biopolymers. An in vitro study on HOB human osteoblasts was performed to assess biocompatibility and bioactivity of SiO2 functionalized poly(lactide-co-glycolide) (PLGA) membranes, prior to clinical use. A 15 nm SiO2 layer was deposited by plasma enhanced chemical vapour deposition (PECVD), onto a resorbable PLGA membrane. Samples were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, and infrared spectroscopy (FT-IR). HOB cells were seeded on sterilized test surfaces where cell morphology, spreading, actin cytoskeletal organization, and focal adhesion expression were assessed. As proved by the FT-IR analysis of samples, the deposition by PECVD of the SiO2 onto the PLGA membrane did not alter the composition and other characteristics of the organic membrane. A temporal and spatial reorganization of cytoskeleton and focal adhesions and morphological changes in response to SiO2 nanolayer were identified in our model. The novedous SiO2 deposition method is compatible with the standard sterilization protocols and reveals as a valuable tool to increase bioactivity of resorbable PLGA membranes. PMID:24883304

  2. Plasma enhanced chemical vapour deposition of silica onto Ti: Analysis of surface chemistry, morphology and functional hydroxyl groups

    PubMed Central

    Szili, Endre J.; Kumar, Sunil; Smart, Roger St. C.; Lowe, Rachel; Saiz, Eduardo; Voelcker, Nicolas H.

    2009-01-01

    Previously, we have developed and characterised a procedure for the deposition of thin silica films by a plasma enhanced chemical vapour deposition (PECVD) procedure using tetraethoxysilane (TEOS) as the main precursor. We have used the silica coatings for improving the corrosion resistance of metals and for enhancing the bioactivity of biomedical metallic implants. Recently, we have been fine-tuning the PECVD method for producing high quality and reproducible PECVD-silica (PECVD-Si) coatings on metals, primarily for biomaterial applications. In order to understand the interaction of the PECVD-Si coatings with biological species (such as proteins and cells), it is important to first analyse the properties of the silica films deposited using the optimised parameters. Therefore, this current investigation was carried out to analyse the characteristic features of PECVD-Si deposited on Ti substrates (PECVD-Si-Ti). We determined that the PECVD-Si coatings on Ti were conformal to the substrate surface, strongly adhered to the underlying substrate and were resistant to delamination. The PECVD-Si surface was composed of stoichiometric SiO2, showed a low carbon content (below 10 at.%) and was very hydrophilic (contact angle <10°). Finally, we also showed that the PECVD-Si coatings contain functional hydroxyl groups. PMID:19809536

  3. Plasma enhanced chemical vapour deposition of silica onto Ti: Analysis of surface chemistry, morphology and functional hydroxyl groups.

    PubMed

    Szili, Endre J; Kumar, Sunil; Smart, Roger St C; Lowe, Rachel; Saiz, Eduardo; Voelcker, Nicolas H

    2008-07-15

    Previously, we have developed and characterised a procedure for the deposition of thin silica films by a plasma enhanced chemical vapour deposition (PECVD) procedure using tetraethoxysilane (TEOS) as the main precursor. We have used the silica coatings for improving the corrosion resistance of metals and for enhancing the bioactivity of biomedical metallic implants. Recently, we have been fine-tuning the PECVD method for producing high quality and reproducible PECVD-silica (PECVD-Si) coatings on metals, primarily for biomaterial applications. In order to understand the interaction of the PECVD-Si coatings with biological species (such as proteins and cells), it is important to first analyse the properties of the silica films deposited using the optimised parameters. Therefore, this current investigation was carried out to analyse the characteristic features of PECVD-Si deposited on Ti substrates (PECVD-Si-Ti). We determined that the PECVD-Si coatings on Ti were conformal to the substrate surface, strongly adhered to the underlying substrate and were resistant to delamination. The PECVD-Si surface was composed of stoichiometric SiO(2), showed a low carbon content (below 10 at.%) and was very hydrophilic (contact angle <10°). Finally, we also showed that the PECVD-Si coatings contain functional hydroxyl groups.

  4. Titania Coated Mica via Chemical Vapour Deposition, Post N-doped by Liquid Ammonia Treatment

    NASA Astrophysics Data System (ADS)

    Powell, Michael J.; Parkin, Ivan P.

    TiO2 films were successfully grown on synthetic mica powders via Chemical Vapor Deposition (CVD). The CVD rig is a cold-walled design that allows surface coverage of a powder to be successfully achieved. The TiO2 was produced by the reaction between TiCl4 and Ethyl Acetate. The powder produced could be successfully N-doped using post liquid ammonia treatment. The TiO2 powder produced could have potential applications in self-cleaning surfaces or antimicrobial paints.

  5. Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition

    DOE PAGES

    Liu, Zheng; Amani, Matin; Najmaei, Sina; ...

    2014-11-18

    Monolayer molybdenum disulfide (MoS2) has attracted tremendous attention due to its promising applications in high-performance field-effect transistors, phototransistors, spintronic devices, and nonlinear optics. The enhanced photoluminescence effect in monolayer MoS2 was discovered and, as a strong tool, was employed for strain and defect analysis in MoS2. Recently, large-size monolayer MoS2 has been produced by chemical vapor deposition but has not yet been fully explored. Here we systematically characterize chemical vapor deposition grown MoS2 by PL spectroscopy and mapping, and demonstrate non-uniform strain in single-crystalline monolayer MoS2 and strain-induced band gap engineering. We also evaluate the effective strain transferred from polymermore » substrates to MoS2 by three-dimensional finite element analysis. In addition, our work demonstrates that PL mapping can be used as a non-contact approach for quick identification of grain boundaries in MoS2.« less

  6. Modifying friction between ultra-high molecular weight polyethylene (UHMWPE) yarns with plasma enhanced chemical vapour deposition (PCVD)

    NASA Astrophysics Data System (ADS)

    Chu, Yanyan; Chen, Xiaogang; Tian, Lipeng

    2017-06-01

    Ultra-high molecular weight polyethylene (UHMWPE) yarns are widely used in military applications for protection owing to its high modulus and high strength; however, the friction between UHMWPE yarns is too small, which is a weakness for ballistic applications. The purpose of current research is to increase the friction between UHMWPE yarns by plasma enhanced chemical vapour deposition (PCVD). The changes of morphology and chemical structure were characterised by SEM and FTIR individually. The coefficients of friction between yarns were tested by means of Capstan method. Results from tests showed that the yarn-yarn coefficient of static friction (CSF) has been improved from 0.12 to 0.23 and that of kinetic friction (CSF) increased from 0.11 to 0.19, as the samples exposure from 21 s to 4 min. The more inter-yarn friction can be attributed to more and more particles and more polar groups deposited on the surfaces of yarns, including carboxyl, carbonyl, hydroxyl and amine groups and compounds containing silicon. The tensile strength and modulus of yarns, which are essential to ballistic performance, keep stable and are not affected by the treatments, indicating that PCVD treatment is an effective way to improve the inter-yarn friction without mechanical property degradation.

  7. Nanofabrication using home-made RF plasma coupled chemical vapour deposition system

    NASA Astrophysics Data System (ADS)

    Ong, Si Ci; Ilyas, Usman; Rawat, Rajdeep Singh

    2014-08-01

    Zinc oxide, ZnO, a popular semiconductor material with a wide band gap (3.37 eV) and high binding energy of the exciton (60 meV), has numerous applications such as in optoelectronics, chemical/biological sensors, and drug delivery. This project aims to (i) optimize the operating conditions for growth of ZnO nanostructures using the chemical vapor deposition (CVD) method, and (ii) investigate the effects of coupling radiofrequency (RF) plasma to the CVD method on the quality of ZnO nanostructures. First, ZnO nanowires were synthesized using a home-made reaction setup on gold-coated and non-coated Si (100) substrates at 950 °C. XRD, SEM, EDX, and PL measurements were used for characterizations and it was found that a deposition duration of 10 minutes produced the most well-defined ZnO nanowires. SEM analysis revealed that the nanowires had diameters ranging from 30-100 mm and lengths ranging from 1-4 µm. In addition, PL analysis showed strong UV emission at 380 nm, making it suitable for UV lasing. Next, RF plasma was introduced for 30 minutes. Both remote and in situ RF plasma produced less satisfactory ZnO nanostructures with poorer crystalline structure, surface morphology, and optical properties due to etching effect of energetic ions produced from plasma. However, a reduction in plasma discharge duration to 10 minutes produced thicker and shorter ZnO nanostructures. Based on experimentation conducted, it is insufficient to conclude that RF plasma cannot aid in producing well-defined ZnO nanostructures. It can be deduced that the etching effect of energetic ions outweighed the increased oxygen radical production in RF plasma nanofabrication.

  8. Low temperature silicon nitride by hot wire chemical vapour deposition for the use in impermeable thin film encapsulation on flexible substrates.

    PubMed

    Spee, D A; van der Werf, C H M; Rath, J K; Schropp, R E I

    2011-09-01

    High quality non porous silicon nitride layers were deposited by hot wire chemical vapour deposition at substrate temperatures lower than 110 degrees C. The layer properties were investigated using FTIR, reflection/transmission measurements and 1:6 buffered HF etching rate. A Si-H peak position of 2180 cm(-1) in the Fourier transform infrared absorption spectrum indicates a N/Si ratio around 1.2. Together with a refractive index of 1.97 at a wavelength of 632 nm and an extinction coefficient of 0.002 at 400 nm, this suggests that a transparent high density silicon nitride material has been made below 110 degrees C, which is compatible with polymer films and is expected to have a high impermeability. To confirm the compatibility with polymer films a silicon nitride layer was deposited on poly(glycidyl methacrylate) made by initiated chemical vapour deposition, resulting in a highly transparent double layer.

  9. Plasma and ion beam enhanced chemical vapour deposition of diamond and diamond-like carbon

    NASA Astrophysics Data System (ADS)

    Tang, Yongji

    WC-Co cutting tools are widely used in the machining industry. The application of diamond coatings on the surfaces of the tools would prolong the cutting lifetime and improves the manufacturing efficiency. However, direct chemical vapor deposition (CVD) of diamond coatings on WC-Co suffer from severe premature adhesion failure due to interfacial graphitization induced by the binder phase Co. In this research, a combination of hydrochloric acid (HCl) and hydrogen (H2) plasma pretreatments and a novel double interlayer of carbide forming element (CFE)/Al were developed to enhance diamond nucleation and adhesion. The results showed that both the pretreatments and interlayers were effective in forming continuous and adhesive nanocrystalline diamond coatings. The method is a promising replacement of the hazardous Murakami's regent currently used in WC-Co pretreatment with a more environmental friendly approach. Apart from coatings, diamond can be fabricated into other forms of nanostructures, such as nanotips. In this work, it was demonstrated that oriented diamond nanotip arrays can be fabricated by ion beam etching of as-grown CVD diamond. The orientation of diamond nanotips can be controlled by adjusting the direction of incident ion beam. This method overcomes the limits of other techniques in producing nanotip arrays on large areas with controlled orientation. Oriented diamond nano-tip arrays have been used to produce anisotropic frictional surface, which is successfully used in ultra-precision positioning systems. Diamond-like carbon (DLC) has many properties comparable to diamond. In this thesis, the preparation of alpha-C:H thin films by end-Hall (EH) ion source and the effects of ion energy and nitrogen doping on the microstructure and mechanical properties of the as-deposited thin films were investigated. The results have demonstrated that smooth and uniform alpha-C:H and alpha-C:H:N films with large area and reasonably high hardness and Young's modulus can be

  10. Catalyst-free growth of ZnO nanowires by metal-organic chemical vapour deposition (MOCVD) and thermal evaporation

    SciTech Connect

    Lee, Woong; Jeong, Min-Chang; Myoung, Jae-Min

    2004-08-02

    ZnO nanowires were grown on GaAs(0 0 2) substrates using metal-organic chemical vapour deposition (MOCVD) and on Si(0 0 1) substrates using thermal evaporation of source powders, respectively. It was demonstrated that well-aligned single crystalline nanowires could be grown with controlled sizes using a typical thin film deposition technique without catalysts. Arsenic doping of the ZnO nanowires grown on GaAs substrate was possible using post-growth heat-treatment, proposing a possible way of producing p-type ZnO nanowires. It was also shown that simplified process of carrier-free thermal evaporation without catalyst could be employed to grow nanowires with high yield while maintaining good crystalline and optical properties. Application potential of the nanowires as probes of atomic force microscopes (AFMs) was discussed by predicting their structural compatibility with AFM cantilevers based on continuum elasticity. It was predicted that the nanowires fabricated herein are structurally compatible with typical AFM cantilevers suggesting that they are promising candidates for high aspect ratio probes.

  11. Effects of ball-milling on lithium insertion into multi-walled carbon nanotubes synthesized by thermal chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Eom, JiYong; Kim, DongYung; Kwon, HyukSang

    The effects of ball-milling on Li insertion into multi-walled carbon nanotubes (MWNTs) are presented. The MWNTs are synthesized on supported catalysts by thermal chemical vapour deposition, purified, and mechanically ball-milled by the high energy ball-milling. The purified MWNTs and the ball-milled MWNTs were electrochemically inserted with Li. Structural and chemical modifications in the ball-milled MWNTs change the insertion-extraction properties of Li ions into/from the ball-milled MWNTs. The reversible capacity (C rev) increases with increasing ball-milling time, namely, from 351 mAh g -1 (Li 0.9C 6) for the purified MWNTs to 641 mAh g -1 (Li 1.7C 6) for the ball-milled MWNTs. The undesirable irreversible capacity (C irr) decreases continuously with increase in the ball-milling time, namely, from 1012 mAh g -1 (Li 2.7C 6) for the purified MWNTs to 518 mAh g -1 (Li 1.4C 6) for the ball-milled MWNTs. The decrease in C irr of the ball-milled samples results in an increase in the coulombic efficiency from 25% for the purified samples to 50% for the ball-milled samples. In addition, the ball-milled samples maintain a more stable capacity than the purified samples during charge-discharge cycling.

  12. Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

    SciTech Connect

    Issaoui, R.; Achard, J.; Tallaire, A.; Silva, F.; Gicquel, A.; Bisaro, R.; Servet, B.; Garry, G.; Barjon, J.

    2012-03-19

    In this study, 4 x 4 mm{sup 2} freestanding boron-doped diamond single crystals with thickness up to 260 {mu}m have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 10{sup 18} to 10{sup 20} cm{sup -3} which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 {Omega} cm have been obtained.

  13. Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition

    DOE PAGES

    Yoo, Jinkyoung; Ahmed, Towfiq; Tang, Wei; ...

    2017-09-05

    ZnO radial p–n junction architecture has the potential for forward-leap of light-emitting diode (LED) technology in terms of higher efficacy and economical production. Here, we report on ZnO radial p–n junction-based light emitting diodes prepared by full metalorganic chemical vapour deposition (MOCVD) with hydrogen-assisted p-type doping approach. The p-type ZnO(P) thin films were prepared by MOCVD with the precursors of dimethylzinc, tert-butanol, and tertiarybutylphosphine. Controlling the precursor flow for dopant results in the systematic change of doping concentration, Hall mobility, and electrical conductivity. Moreover, the approach of hydrogen-assisted phosphorous doping in ZnO expands the understanding of doping behaviour in ZnO.more » Ultraviolet and visible electroluminescence of ZnO radial p–n junction was demonstrated through a combination of position-controlled nano/microwire and crystalline p-type ZnO(P) radial shell growth on the wires. Lastly, the reported research opens a pathway of realisation of production-compatible ZnO p–n junction LEDs.« less

  14. Influence of metal organic chemical vapour deposition growth conditions on vibrational and luminescent properties of ZnO nanorods

    NASA Astrophysics Data System (ADS)

    Montenegro, D. N.; Hortelano, V.; Martínez, O.; Martínez-Tomas, M. C.; Sallet, V.; Muñoz-Sanjosé, V.; Jiménez, J.

    2013-04-01

    A detailed optical characterization by means of micro Raman and cathodoluminescence spectroscopy of catalyst-free ZnO nanorods grown by atmospheric-metal organic chemical vapour deposition has been carried out. This characterization has allowed correlating the growth conditions, in particular the precursors partial-pressures and growth time, with the optical properties of nanorods. It has been shown that a high Zn supersaturation can favor the incorporation of nonradiative recombination centers, which can tentatively be associated with ZnI-related defects. Characterization of individual nanorods has evidenced that ZnI-related defects have a tendency to accumulate in the tip part of the nanorods, which present dark cathodoluminescence contrast with respect to the nanorods bottom. The effect of a ZnO buffer layer on the properties of the nanorods has been also investigated, showing that the buffer layer improves the luminescence efficiency of the ZnO nanorods, revealing a significant reduction of the concentration of nonradiative recombination centers.

  15. Synthesis of ultrathin polymer insulating layers by initiated chemical vapour deposition for low-power soft electronics.

    PubMed

    Moon, Hanul; Seong, Hyejeong; Shin, Woo Cheol; Park, Won-Tae; Kim, Mincheol; Lee, Seungwon; Bong, Jae Hoon; Noh, Yong-Young; Cho, Byung Jin; Yoo, Seunghyup; Im, Sung Gap

    2015-06-01

    Insulating layers based on oxides and nitrides provide high capacitance, low leakage, high breakdown field and resistance to electrical stresses when used in electronic devices based on rigid substrates. However, their typically high process temperatures and brittleness make it difficult to achieve similar performance in flexible or organic electronics. Here, we show that poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3) prepared via a one-step, solvent-free technique called initiated chemical vapour deposition (iCVD) is a versatile polymeric insulating layer that meets a wide range of requirements for next-generation electronic devices. Highly uniform and pure ultrathin films of pV3D3 with excellent insulating properties, a large energy gap (>8 eV), tunnelling-limited leakage characteristics and resistance to a tensile strain of up to 4% are demonstrated. The low process temperature, surface-growth character, and solvent-free nature of the iCVD process enable pV3D3 to be grown conformally on plastic substrates to yield flexible field-effect transistors as well as on a variety of channel layers, including organics, oxides, and graphene.

  16. Direct synthesis of solid and hollow carbon nanospheres over NaCl crystals using acetylene by chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Chandra Kishore, S.; Anandhakumar, S.; Sasidharan, M.

    2017-04-01

    Carbon nanospheres (CNS) with hollow and solid morphologies have been synthesised by a simple chemical vapour deposition method using acetylene as a carbon precursor. Sodium chloride (NaCl) powder as a template was used for the direct growth of CNS via facile and low-cost approach. The effect of various temperatures (500 °C, 600 °C and 700 °C) and acetylene flow rates were investigated to study the structural evolution on the carbon products. The purified CNS thus obtained was characterized by various physicochemical techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), Raman spectroscopy, and cyclicvoltametry. The synthesised hollow nanospheres were investigated as anode materials for Li-ion batteries. After 25 cycles of repeated charge/discharge cycles, the discharge and charge capacities were found to be 574 mAh/g and 570 mAh/g, respectively which are significantly higher than the commercial graphite samples.

  17. Temperature-dependent Hall effect studies of ZnO thin films grown by metalorganic chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Roro, K. T.; Kassier, G. H.; Dangbegnon, J. K.; Sivaraya, S.; Westraadt, J. E.; Neethling, J. H.; Leitch, A. W. R.; Botha, J. R.

    2008-05-01

    The electrical properties of zinc oxide (ZnO) thin films of various thicknesses (0.3-4.4 µm) grown by metalorganic chemical vapour deposition on glass substrates have been studied by using temperature-dependent Hall-effect (TDH) measurements in the 18-300 K range. The high quality of the layers has been confirmed with x-ray diffraction, transmission electron microscopy, scanning electron microscopy and photoluminescence techniques. TDH measurements indicate the presence of a degenerate layer which significantly influences the low-temperature data. It is found that the measured mobility generally increases with increasing layer thickness, reaching a value of 120 cm2 V-1 s-1 at room temperature for the 4.4 µm thick sample. The lateral grain size of the layers is also found to increase with thickness indicating a clear correlation between the size of the surface grains and the electrical properties of corresponding films. Theoretical fits to the Hall data suggest that the bulk conduction of the layers is dominated by a weakly compensated donor with activation energy in the 33-41 meV range and concentration of the order of 1017 cm-3, as well as a total acceptor concentration of mid-1015 cm-3. Grain boundary scattering is found to be an important limiting factor of the mobility throughout the temperature range considered.

  18. Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Yoo, Jinkyoung; Ahmed, Towfiq; Tang, Wei; Kim, Yong-Jin; Hong, Young Joon; Lee, Chul-Ho; Yi, Gyu-Chul

    2017-09-01

    ZnO radial p–n junction architecture has the potential for forward-leap of light-emitting diode (LED) technology in terms of higher efficacy and economical production. We report on ZnO radial p–n junction-based light emitting diodes prepared by full metalorganic chemical vapour deposition (MOCVD) with hydrogen-assisted p-type doping approach. The p-type ZnO(P) thin films were prepared by MOCVD with the precursors of dimethylzinc, tert-butanol, and tertiarybutylphosphine. Controlling the precursor flow for dopant results in the systematic change of doping concentration, Hall mobility, and electrical conductivity. Moreover, the approach of hydrogen-assisted phosphorous doping in ZnO expands the understanding of doping behaviour in ZnO. Ultraviolet and visible electroluminescence of ZnO radial p–n junction was demonstrated through a combination of position-controlled nano/microwire and crystalline p-type ZnO(P) radial shell growth on the wires. The reported research opens a pathway of realisation of production-compatible ZnO p–n junction LEDs.

  19. Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition.

    PubMed

    Yoo, Jinkyoung; Ahmed, Towfiq; Tang, Wei; Kim, Yong-Jin; Joon Hong, Young; Lee, Chul-Ho; Yi, Gyu-Chul

    2017-09-27

    ZnO radial p-n junction architecture has the potential for forward-leap of light-emitting diode (LED) technology in terms of higher efficacy and economical production. We report on ZnO radial p-n junction-based light emitting diodes prepared by full metalorganic chemical vapour deposition (MOCVD) with hydrogen-assisted p-type doping approach. The p-type ZnO(P) thin films were prepared by MOCVD with the precursors of dimethylzinc, tert-butanol, and tertiarybutylphosphine. Controlling the precursor flow for dopant results in the systematic change of doping concentration, Hall mobility, and electrical conductivity. Moreover, the approach of hydrogen-assisted phosphorous doping in ZnO expands the understanding of doping behaviour in ZnO. Ultraviolet and visible electroluminescence of ZnO radial p-n junction was demonstrated through a combination of position-controlled nano/microwire and crystalline p-type ZnO(P) radial shell growth on the wires. The reported research opens a pathway of realisation of production-compatible ZnO p-n junction LEDs.

  20. Ultraviolet absorption measurements of CF2 in the parallel plate pyrolytic chemical vapour deposition process

    NASA Astrophysics Data System (ADS)

    Cruden, Brett A.; Gleason, Karen K.; Sawin, Herbert H.

    2002-03-01

    Polytetrafluoroethylene films have been deposited for use as low dielectric constant materials. Deposition is performed through pyrolysis of hexafluoropropylene oxide (HFPO) to produce CF2, which can then polymerize and deposit as a thin film. The variation of CF2 concentration as a function of reactor conditions has been characterized by ultraviolet absorption spectroscopy. CF2 concentration is observed to go through a maximum with respect to both pressure and pyrolysis temperature when it is present in large amounts (~1014 cm-3). A one-dimensional model including known kinetic reactions for HFPO decomposition and CF2 recombination and multi-component diffusive transport has been applied to the parallel plate system. The result is seen to overestimate the measured concentration and does not capture the maxima observed versus pressure and temperature. An additional mechanism of particle formation, by CF2 insertion into (CF2)n oligomers, has been introduced to produce a kinetic model that explains the CF2 concentration measurements.

  1. Metal-organic chemical vapour deposition of polycrystalline tetragonal indium sulphide (InS) thin films

    NASA Technical Reports Server (NTRS)

    Macinnes, Andrew N.; Cleaver, William M.; Barron, Andrew R.; Power, Michael B.; Hepp, Aloysius F.

    1992-01-01

    The dimeric indium thiolate /(t Bu)2In(mu-S sup t Bu)/2 has been used as a single-source precursor for the MOCVD of InS thin films. The dimeric In2S2 core is proposed to account for the formation of the nonequilibrium high-pressure tetragonal phase in the deposited films. Analysis of the deposited films has been obtained by TEM, with associated energy-dispersive X-ray analysis and X-ray photoelectron spectroscopy.

  2. Metal-organic chemical vapour deposition of polycrystalline tetragonal indium sulphide (InS) thin films

    NASA Technical Reports Server (NTRS)

    Macinnes, Andrew N.; Cleaver, William M.; Barron, Andrew R.; Power, Michael B.; Hepp, Aloysius F.

    1992-01-01

    The dimeric indium thiolate /(t Bu)2In(mu-S sup t Bu)/2 has been used as a single-source precursor for the MOCVD of InS thin films. The dimeric In2S2 core is proposed to account for the formation of the nonequilibrium high-pressure tetragonal phase in the deposited films. Analysis of the deposited films has been obtained by TEM, with associated energy-dispersive X-ray analysis and X-ray photoelectron spectroscopy.

  3. Al2O3 thin films by plasma-enhanced chemical vapour deposition using trimethyl-amine alane (TMAA) as the Al precursor

    NASA Astrophysics Data System (ADS)

    Chryssou, C. E.; Pitt, C. W.

    We report the low temperature (200-300 °C) deposition of uniform, amorphous Al2O3 thin films by plasma-enhanced chemical vapour deposition (PECVD) using trimethyl-amine alane (TMAA) as the Al precursor. The thin films were deposited on both Si and quartz silica (SiO2) substrates. Deposition rates were typically 60 Åmin-1 keeping the TMAA temperature constant at 45 °C. The deposited Al2O3 thin films were stoichiometric alumina with low carbon contamination (0.7-1.3 At%). The refractive index ranged from 1.54 to 1.62 depending on the deposition conditions. The deposition rate was studied as a function of both the RF power and the substrate temperature. The structure and the surface of the deposited Al2O3 thin films were studied using X-ray diffraction, atomic force microscopy (AFM) and scanning electron microscopy (SEM).

  4. Effects of precursor concentration on the optical and electrical properties of SnXSY thin films prepared by plasma-enhanced chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Sanchez-Juarez, A.; Ortíz, A.

    2002-09-01

    We have carried out the electrical and optical characterization of thin films of compounds based on Sn-S bonds (SnS2, Sn2S3), prepared by plasma-enhanced chemical vapour deposition (PECVD), as a function of the relative concentration of the precursor vapours, SnCl4 and H2S, keeping all other deposition parameters constant. In all studied cases, the deposited films were formed by polycrystalline materials. The optical bandgap values of deposited materials were calculated from optical transmittance and reflectance measurements. The SnS2 compound produced under certain deposition conditions has a forbidden bandgap around 2.2 eV. This compound shows n-type electrical conductivity, whose dark value at room temperature is 2 × 10-2 (Ω cm)-1. Also, it shows the typical semiconductor dependence of its electrical conductivity on the temperature with an activation energy of about 0.15 eV. However, thin films of a mixture of SnS2 and Sn2S3 compounds were deposited with higher values of the relative concentration of source vapours than those used to obtain the SnS2 compound. The optical bandgap shows a decreasing trend as the relative concentration increases. A similar trend is observed for dark electrical conductivity. These results create the opportunity to use SnX SY compounds in thin films for building heterojunction solar cells prepared completely by PECVD.

  5. Chemical vapour deposition of nitrogen-doped titanium dioxide thin films.

    PubMed

    Alexandrov, S E; Baryshnikova, M V; Filatov, L A; Shahmin, A L; Andreeva, V D

    2011-09-01

    Nitrogen-doped titanium dioxide is often considered as a promising nanomaterial for photocatalytic applications. Here we report the first results of a study of APCVD of N-doped TiO2 thin films prepared with the use of ammonia as a source of nitrogen and titanium tetraisopropoxide (TTIP) as a source of Ti and O atoms. The obtained films were analyzed with X-ray diffraction, infrared spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy, UV-Vis spectroscopy, and ellipsometry. It was found that the film growth rate in the TTIP-NH3-Ar reaction system varied insignificantly with substrate temperature in the range of 450,..., 750 degrees C and did not exceed 4.4 nm/min. Yellow and orange layers with nitrogen content of about 7.6% were formed at the deposition temperature higher than 600 degrees C. The results of the structure analysis of the deposited films showed that addition of ammonia led to stabilization of the amorphous phase in the films. The effect of ammonia on optical and photocatalytic properties was also considered.

  6. A comparison of various surface charge transfer hole doping of graphene grown by chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Chandramohan, S.; Seo, Tae Hoon; Janardhanam, V.; Hong, Chang-Hee; Suh, Eun-Kyung

    2017-10-01

    Charge transfer doping is a renowned route to modify the electrical and electronic properties of graphene. Understanding the stability of potentially important charge-transfer materials for graphene doping is a crucial first step. Here we present a systematic comparison on the doping efficiency and stability of single layer graphene using molybdenum trioxide (MoO3), gold chloride (AuCl3), and bis(trifluoromethanesulfonyl)amide (TFSA). Chemical dopants proved to be very effective, but MoO3 offers better thermal stability and device fabrication compatibility. Single layer graphene films with sheet resistance values between 100 and 200 ohm/square were consistently produced by implementing a two-step growth followed by doping without compromising the optical transmittance.

  7. Biological properties of carbon powders synthesized using chemical vapour deposition and detonation methods.

    PubMed

    Batory, M; Batory, D; Grabarczyk, J; Kaczorowski, W; Kupcewicz, B; Mitura, K; Nasti, T H; Yusuf, N; Niedzielski, P

    2012-12-01

    Carbon powders can be synthesized using variety of CVD and detonation methods. Several interesting properties of carbon powder particles make them a very attractive material examined in many laboratories all over the world. However there is a lack of information discussing investigation of carbon powders directed to its application in pharmaceutical-cosmetic industry and medicine. Earlier investigation results proved that diamond powders present properties fighting free radicals. Presented work discusses the influence of carbon powder particles manufactured using MW/RF PACVD, RF PACVD and detonation methods onto hydro-lipid skin coat. Before the biological examinations physicochemical properties of carbon powders were determined. Grain size, shape and chemical composition of carbon powders were determined using the scanning electron microscopy. Surface functional groups were characterized by IR Fourier-transform spectroscopy and X-ray photoelectron spectroscopy. Structure and phase composition were investigated by means of the Raman spectroscopy. Results of allergy tests performed on laboratory mice proved that carbon powder particles synthesized using different methods do not cause allergy. In the following stage, the group of 20 patients applied the formula including carbon powder on their face skin. The influence of carbon powder onto hydro-lipid skin coat was determined by measurement of such parameters as: pH reaction, skin temperature, lipid fotometry and level of hydration. Additionally, macro pictures of places where the cream had been applied were registered. As the result of the investigation it was found that powders synthesized using various methods present different physicochemical properties which may individually affect the face skin parameters. The noticeable improvement of hydro-lipid skin coat kilter was observed.

  8. Study of barrier properties and chemical resistance of recycled PET coated with amorphous carbon through a plasma enhanced chemical vapour deposition (PECVD) process.

    PubMed

    Cruz, S A; Zanin, M; Nerin, C; De Moraes, M A B

    2006-01-01

    Many studies have been carried out in order to make bottle-to-bottle recycling feasible. The problem is that residual contaminants in recycled plastic intended for food packaging could be a risk to public health. One option is to use a layer of virgin material, named functional barrier, which prevents the contaminants migration process. This paper shows the feasibility of using polyethylene terephthalate (PET) recycled for food packaging employing a functional barrier made from hydrogen amorphous carbon film deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) process. PET samples were deliberately contaminated with a series of surrogates using a FDA protocol. After that, PET samples were coated with approximately 600 and 1200 Angstrons thickness of amorphous carbon film. Then, the migration tests using as food simulants: water, 10% ethanol, 3% acetic acid, and isooctane were applied to the sample in order to check the chemical resistance of the new coated material. After the tests, the liquid extracts were analysed using a solid-phase microextraction device (SPME) coupled to GC-MS.

  9. Barrier properties to surrogates of hydrogenated carbon nano-films deposited on PET by plasma-enhanced chemical vapour deposition.

    PubMed

    Oliveira, Éder C; Echegoyen, Yolanda; Nerin, Cristina; Cruz, Sandra A

    2014-01-01

    Poly(ethylene terephthalate) resin was contaminated with a series of surrogates using a US Food and Drug Administration protocol. The contaminated samples were coated with two different kinds of hydrogenated amorphous carbon thin films (a-C:H): one with diamond-like hydrogenated amorphous carbon and another with polymer-like hydrogenated carbon (PLCH) phases. To evaluate the barrier properties of the a-C:H films, migration assays were performed using food simulants. After the tests, analysis by gas chromatography with different detectors was carried out. The appearance of the films before and after the migration experiments was studied by field emission scanning electron microscopy. The results showed that a-C:H films have good barrier properties for most of the evaluated compounds, mainly when they are deposited as PLCH phase.

  10. Surface engineering of artificial heart valve disks using nanostructured thin films deposited by chemical vapour deposition and sol-gel methods.

    PubMed

    Jackson, M J; Robinson, G M; Ali, N; Kousar, Y; Mei, S; Gracio, J; Taylor, H; Ahmed, W

    2006-01-01

    Pyrolytic carbon (PyC) is widely used in manufacturing commercial artificial heart valve disks (HVD). Although PyC is commonly used in HVD, it is not the best material for this application since its blood compatibility is not ideal for prolonged clinical use. As a result thrombosis often occurs and the patients are required to take anti-coagulation drugs on a regular basis in order to minimize the formation of thrombosis. However, anti-coagulation therapy gives rise to some detrimental side effects in patients. Therefore, it is extremely urgent that newer and more technically advanced materials with better surface and bulk properties are developed. In this paper, we report the mechanical properties of PyC-HVD, i.e. strength, wear resistance and coefficient of friction. The strength of the material was assessed using Brinell indentation tests. Furthermore, wear resistance and coefficient of friction values were obtained from pin-on-disk testing. The micro-structural properties of PyC were characterized using XRD, Raman spectroscopy and SEM analysis. Also in this paper we report the preparation of freestanding nanocrystalline diamond films (FSND) using the time-modulated chemical vapour deposition (TMCVD) process. Furthermore, the sol-gel technique was used to uniformly coat PyC-HVD with dense, nanocrystalline-titanium oxide (nc-TiO2) coatings. The as-grown nc-TiO2 coatings were characterized for microstructure using SEM and XRD analysis.

  11. Rapid thermal low-pressure chemical vapour deposition of tungsten films onto InP using WF6 and H2

    NASA Astrophysics Data System (ADS)

    Katz, A.; Feingold, A.; El-Roy, A.; Pearton, S. J.; Lane, E.; Nakahara, S.; Geva, M.

    1992-11-01

    Tungsten (W) films were deposited onto InP in a cold wall, rapid thermal low-pressure chemical vapour deposition (RT-LPCVD) reactor, from a tungsten hexafluoride (WF6) gas reduced by hydrogen (H2). W films of thickness 50-450 nm were deposited in the temperature range 350-550 degrees C, pressure range 0.5-4.5 Torr at deposition rates up to 4 nm s-1 with an apparent activation energy of about 1.12 eV. The film stress varied depending upon the deposition pressure, from low compressive for deposition at 0.5 Torr to moderate tensile for deposition at about 4.5 Torr. The films were aged at temperatures as high as 300 degrees C for about 800 h and exhibited an excellent mechanical stability. Post-deposition sintering of the W films at temperatures up to 600 degrees C led to reduction of the resistivity with a minimum value of about 55 mu Omega cm as a result of heating at 500 degrees C. Conditions for both selective and blanket deposition were defined, and a dry etching process for further geometrical definitions of the films was developed, providing etch rates of 40-50 nm min-1. This report reflects the first attempt to deposit W films onto III-V semiconductor at a very high rate by means of RT-LPCVD.

  12. A Comparative Study of the Dispersion of Multi-Wall Carbon Nanotubes Made by Arc-Discharge and Chemical Vapour Deposition.

    PubMed

    Frømyr, Tomas-Roll; Bourgeaux-Goget, Marie; Hansen, Finn Knut

    2015-05-01

    A method has been developed to characterize the dispersion of multi-wall carbon nanotubes in water using a disc centrifuge for the detection of individual carbon nanotubes, residual aggregates, and contaminants. Carbon nanotubes produced by arc-discharge have been measured and compared with carbon nanotubes produced by chemical vapour deposition. Studies performed on both pristine (see text) arc-discharge nanotubes is rather strong and that high ultra-sound intensity is required to achieve complete dispersion of carbon nanotube bundles. The logarithm of the mode of the particle size distribution of the arc-discharge carbon nanotubes was found to be a linear function of the logarithm of the total ultrasonic energy input in the dispersion process.

  13. Low Pressure Chemical Vapour Deposition of Crystalline Ga2Te3 and Ga2Se3 Thin Films from Single Source Precursors Using Telluroether and Selenoether Complexes

    NASA Astrophysics Data System (ADS)

    George, Kathryn; Groot, C. H. (Kees) de; Gurnani, Chitra; Hector, Andrew L.; Huang, Ruomeng; Jura, Marek; Levason, William; Reid, Gillian

    Neutral telluro- and seleno-ether complexes of the form [GaCl3(nBu2E)] (E = Se, Te) and [(GaCl3)2{nBuE(CH2)nEnBu}] (E = Se, n = 2; E = Te, n = 3) have been synthesised via a facile, high yielding reaction. These complexes have been shown to be suitable precursors for the low pressure chemical vapour deposition of Ga2Te3 and Ga2Se3, the first reported example of a telluroether complex being used for the deposition of a metal telluride. The thin films have been characterised by X- ray diffraction, SEM, EDX, Raman and Hall measurements. The films are crystalline, have good, uniform coverage and Raman spectra match literature values. Hall measurements show that the thin films are p-type semiconductors. Competitive deposition of Ga2Te3 onto photolithographically patterned SiO2/TiN substrates shows a preference for deposition onto TiN.

  14. Substrate patterning with NiOx nanoparticles and hot-wire chemical vapour deposition of WO3x and carbon nanostructures

    NASA Astrophysics Data System (ADS)

    Houweling, Z. S.

    2011-10-01

    The first part of the thesis treats the formation of nickel catalyst nanoparticles. First, a patterning technique using colloids is employed to create ordered distributions of monodisperse nanoparticles. Second, nickel films are thermally dewetted, which produces mobile species that self-arrange in non-ordered distributions of polydisperse particles. Third, the mobility of the nickel species is successfully reduced by the addition of air during the dewetting and the use of a special anchoring layer. Thus, non-ordered distributions of self-arranged monodisperse nickel oxide nanoparticles (82±10 nm x 16±2 nm) are made. Studies on nickel thickness, dewetting time and dewetting temperature are conducted. With these particle templates, graphitic carbon nanotubes are synthesised using catalytic hot-wire chemical vapour deposition (HWCVD), demonstrating the high-temperature processability of the nanoparticles. The second part of this thesis treats the non-catalytic HWCVD of tungsten oxides (WO3-x). Resistively heated tungsten filaments exposed to an air flow at subatmospheric pressures, produce tungsten oxide vapour species, which are collected on substrates and are subsequently characterised. First, a complete study on the process conditions is conducted, whereby the effects of filament radiation, filament temperature, process gas pressure and substrate temperature, are investigated. The thus controlled growth of nanogranular smooth amorphous and crystalline WO3-x thin films is presented for the first time. Partially crystalline smooth hydrous WO3-x thin films consisting of 20 nm grains can be deposited at very high rates. The synthesis of ultrafine powders with particle sizes of about 7 nm and very high specific surface areas of 121.7±0.4 m2·g-1 at ultrahigh deposition rates of 36 µm·min-1, is presented. Using substrate heating to 600°C or more, while using air pressures of 3·10-5 mbar to 0.1 mbar, leads to pronounced crystal structures, from nanowires, to

  15. Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition

    SciTech Connect

    Liu, Zheng; Amani, Matin; Najmaei, Sina; Xu, Quan; Zou, Xiaolong; Zhou, Wu; Yu, Ting; Qiu, Caiyu; Birdwell, A. Glen; Crowne, Frank J.; Vajtai, Robert; Yakobson, Boris I.; Xia, Zhenhai; Dubey, Madan; Ajayan, Pulickel M.; Lou, Jun

    2014-11-18

    Monolayer molybdenum disulfide (MoS2) has attracted tremendous attention due to its promising applications in high-performance field-effect transistors, phototransistors, spintronic devices, and nonlinear optics. The enhanced photoluminescence effect in monolayer MoS2 was discovered and, as a strong tool, was employed for strain and defect analysis in MoS2. Recently, large-size monolayer MoS2 has been produced by chemical vapor deposition but has not yet been fully explored. Here we systematically characterize chemical vapor deposition grown MoS2 by PL spectroscopy and mapping, and demonstrate non-uniform strain in single-crystalline monolayer MoS2 and strain-induced band gap engineering. We also evaluate the effective strain transferred from polymer substrates to MoS2 by three-dimensional finite element analysis. In addition, our work demonstrates that PL mapping can be used as a non-contact approach for quick identification of grain boundaries in MoS2.

  16. Effects of boron addition on a-Si(90)Ge(10):H films obtained by low frequency plasma enhanced chemical vapour deposition.

    PubMed

    Pérez, Arllene M; Renero, Francisco J; Zúñiga, Carlos; Torres, Alfonso; Santiago, César

    2005-06-29

    Optical, structural and electric properties of (a-(Si(90)Ge(10))(1-y)B(y):H) thin film alloys, deposited by low frequency plasma enhanced chemical vapour deposition, are presented. The chemical bonding structure has been studied by IR spectroscopy, while the composition was investigated by Raman spectroscopy. A discussion about boron doping effects, in the composition and bonding of samples, is presented. Transport of carriers has been studied by measurement of the conductivity dependence on temperature, which increases from 10(-3) to 10(1) Ω(-1) cm(-1) when the boron content varies from 0 to 50%. Similarly, the activation energy is between 0.62 and 0.19 eV when the doping increases from 0 to 83%. The optical properties have been determined from the film's optical transmission, using Swanepoel's method. It is shown that the optical gap varies from 1.3 to 0.99 eV.

  17. Direct observation of electron emission from the grain boundaries of chemical vapour deposition diamond films by tunneling atomic force microscopy

    SciTech Connect

    Chatterjee, Vijay; Harniman, Robert; May, Paul W.; Barhai, P. K.

    2014-04-28

    The emission of electrons from diamond in vacuum occurs readily as a result of the negative electron affinity of the hydrogenated surface due to features with nanoscale dimensions, which can concentrate electric fields high enough to induce electron emission from them. Electrons can be emitted as a result of an applied electric field (field emission) with possible uses in displays or cold-cathode devices. Alternatively, electrons can be emitted simply by heating the diamond in vacuum to temperatures as low as 350 °C (thermionic emission), and this may find applications in solar energy generation or energy harvesting devices. Electron emission studies usually use doped polycrystalline diamond films deposited onto Si or metallic substrates by chemical vapor deposition, and these films have a rough, faceted morphology on the micron or nanometer scale. Electron emission is often improved by patterning the diamond surface into sharp points or needles, the idea being that the field lines concentrate at the points lowering the barrier for electron emission. However, there is little direct evidence that electrons are emitted from these sharp tips. The few reports in the literature that have studied the emission sites suggested that emission came from the grain boundaries and not the protruding regions. We now present direct observation of the emission sites over a large area of polycrystalline diamond using tunneling atomic force microscopy. We confirm that the emission current comes mostly from the grain boundaries, which is consistent with a model for emission in which the non-diamond phase is the source of electrons with a threshold that is determined by the surrounding hydrogenated diamond surface.

  18. Towards optimization of time modulated chemical vapour deposition for nanostructured diamond films on Ti6Al4V.

    PubMed

    Nibennaoune, Z; George, D; Antoni, F; Santos, J; Cabral, G; Ahzi, S; Ruch, D; Gracio, J; Remond, Y

    2010-04-01

    In this paper, we report the use of the TMCVD technique for the optimisation of deposited diamond films onto Ti6Al4V substrates. A number of samples were made varying the experimental parameters. The specimen surfaces were characterised using micro Raman spectra and SEM analyses. Results show that very different surface finish (from micro to nanostructures) and film characteristics can be obtained from the experimental parameters used. The quality of deposited diamond is very dependant on the experimental settings and process. It was found that lower residual stresses are developed using the TMCVD technique than with conventional CVD but depend on the structural diamond growth during the process. The quality of the deposited film was evaluated as a function of diamond to amorphous carbon ratio but showed no direct relation with the surface finish since it characterises the quality of the deposited diamond but not the quality of the film surface.

  19. Age and structure of a model vapour-deposited glass

    NASA Astrophysics Data System (ADS)

    Reid, Daniel R.; Lyubimov, Ivan; Ediger, M. D.; de Pablo, Juan J.

    2016-10-01

    Glass films prepared by a process of physical vapour deposition have been shown to have thermodynamic and kinetic stability comparable to those of ordinary glasses aged for thousands of years. A central question in the study of vapour-deposited glasses, particularly in light of new knowledge regarding anisotropy in these materials, is whether the ultra-stable glassy films formed by vapour deposition are ever equivalent to those obtained by liquid cooling. Here we present a computational study of vapour deposition for a two-dimensional glass forming liquid using a methodology, which closely mimics experiment. We find that for the model considered here, structures that arise in vapour-deposited materials are statistically identical to those observed in ordinary glasses, provided the two are compared at the same inherent structure energy. We also find that newly deposited hot molecules produce cascades of hot particles that propagate far into the film, possibly influencing the relaxation of the material.

  20. Age and structure of a model vapour-deposited glass

    PubMed Central

    Reid, Daniel R.; Lyubimov, Ivan; Ediger, M. D.; de Pablo, Juan J.

    2016-01-01

    Glass films prepared by a process of physical vapour deposition have been shown to have thermodynamic and kinetic stability comparable to those of ordinary glasses aged for thousands of years. A central question in the study of vapour-deposited glasses, particularly in light of new knowledge regarding anisotropy in these materials, is whether the ultra-stable glassy films formed by vapour deposition are ever equivalent to those obtained by liquid cooling. Here we present a computational study of vapour deposition for a two-dimensional glass forming liquid using a methodology, which closely mimics experiment. We find that for the model considered here, structures that arise in vapour-deposited materials are statistically identical to those observed in ordinary glasses, provided the two are compared at the same inherent structure energy. We also find that newly deposited hot molecules produce cascades of hot particles that propagate far into the film, possibly influencing the relaxation of the material. PMID:27762262

  1. Polyethylene Oxide Films Polymerized by Radio Frequency Plasma-Enhanced Chemical Vapour Phase Deposition and Its Adsorption Behaviour of Platelet-Rich Plasma

    NASA Astrophysics Data System (ADS)

    Hu, Wen-Juan; Xie, Fen-Yan; Chen, Qiang; Weng, Jing

    2008-10-01

    We present polyethylene oxide (PEO) functional films polymerized by rf plasma-enhanced vapour chemical deposition (rf-PECVD) on p-Si (100) surface with precursor ethylene glycol dimethyl ether (EGDME) and diluted Ar in pulsed plasma mode. The influences of discharge parameters on the film properties and compounds are investigated. The film structure is analysed by Fourier transform infrared (FTIR) spectroscopy. The water contact angle measurement and atomic force microscope (AFM) are employed to examine the surface polarity and to detect surface morphology, respectively. It is concluded that the smaller duty cycle in pulsed plasma mode contributes to the rich C-O-C (EO) group on the surfaces. As an application, the adsorption behaviour of platelet-rich plasma on plasma polymerization films performed in-vitro is explored. The shapes of attached cells are studied in detail by an optic invert microscope, which clarifies that high-density C-O-C groups on surfaces are responsible for non-fouling adsorption behaviour of the PEO films.

  2. Effect of organic additives in catalyst preparation on the growth of single-wall carbon nanotubes prepared by catalyst-assisted chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Shen, Lihua; Zhang, Xiaobin; Li, Yu; Yang, Xiaofang; Luo, Junhang; Xu, Guoliang

    2004-03-01

    The effect of organic additives, including citric acid, PEG (2000) and PEG (200), on the yield and quality of single-wall carbon nanotubes (SWNTs) synthesized by a Fe-Mo catalyst dispersed on an alumina matrix prepared by the sol-gel process in assisted chemical vapour deposition (CVD) has been investigated by transmission electron microscopy (TEM), thermo-gravimetric analysis (TGA) and Raman spectroscopy. Different morphologies of catalyst including big flakes, spherical particles and porous supporting materials were obtained using citric acid, PEG (2000) and PEG (200) as dispersant, respectively. SWNT yields of 10 wt%, 16 wt% and 33 wt% were obtained using citric acid, PEG (2000) and PEG (200) as the dispersants, respectively, which implies that the PEG (200) is the most effective at improving the yield of SWNTs due to the effect of additives on the specific surface area of the catalyst. The as-grown SWNTs are mostly in large bundles with diameters of 0.5-2 nm, but in some cases, isolated tubes with much larger diameters can also be found. Finally a preliminary explanation for the increased SWNT yield using PEG (200) is presented.

  3. Effects of time on the quality of vertically oriented single-walled carbon nanotubes by gravity-assisted chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Yeh, C. M.; Chen, M. Y.; Gan, J.-Y.; Hwang, J.; Lin, C. D.; Chao, T. Y.; Cheng, Y. T.

    2007-04-01

    The qualities of freestanding single-walled carbon nanotubes (SWCNTs) grown on Co/Si(100) in the gravity-assisted chemical vapour deposition (CVD) process have been investigated. Vertically oriented SWCNTs of high quality appear at a growth time of less than 3 min, verified by the clear radial breathing mode (RBM) in the Raman spectra and by the high resolution images taken by a transmission electron microscope (TEM). At a growth time of 3 min, vertical and looped SWCNTs co-appear on the substrate. A SWCNT longer than ~1 µm tends to bend into a semicircular loop. At a longer growth time such as 20 min, the coating of amorphous carbon (a-C) on the SWCNT becomes dominant, which is attributed to catalytic poisoning. A relatively long SWCNT (~10-40 µm) surrounded with a thick a-C layer is the final structure. The bending stiffness of the a-C tube is estimated ~15 times larger than that of the SWCNT, which helps to keep the a-C/SWCNT composite structure in a nearly vertical shape. A mechanism has been proposed to explain the coating of a-C on SWCNTs.

  4. Effect of oxygen plasma on field emission characteristics of single-wall carbon nanotubes grown by plasma enhanced chemical vapour deposition system

    SciTech Connect

    Kumar, Avshish; Parveen, Shama; Husain, Samina; Ali, Javid; Zulfequar, Mohammad; Harsh; Husain, Mushahid

    2014-02-28

    Field emission properties of single wall carbon nanotubes (SWCNTs) grown on iron catalyst film by plasma enhanced chemical vapour deposition system were studied in diode configuration. The results were analysed in the framework of Fowler-Nordheim theory. The grown SWCNTs were found to be excellent field emitters, having emission current density higher than 20 mA/cm{sup 2} at a turn-on field of 1.3 V/μm. The as grown SWCNTs were further treated with Oxygen (O{sub 2}) plasma for 5 min and again field emission characteristics were measured. The O{sub 2} plasma treated SWCNTs have shown dramatic improvement in their field emission properties with emission current density of 111 mA/cm{sup 2} at a much lower turn on field of 0.8 V/μm. The as grown as well as plasma treated SWCNTs were also characterized by various techniques, such as scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, and Fourier transform infrared spectroscopy before and after O{sub 2} plasma treatment and the findings are being reported in this paper.

  5. Annealing study of H2O and O3 grown Al2O3 deposited by atomic layer chemical vapour deposition on n-type 4H-SiC

    NASA Astrophysics Data System (ADS)

    Avice, Marc; Grossner, Ulrike; Nilsen, Ola; Christensen, Jens S.; Fjellvåg, Helmer; Svensson, Bengt G.

    2006-09-01

    Al2O3 has been grown by atomic layer chemical vapour deposition on HF cleaned n-type 4H-SiC using either H2O or O3 as an oxidant. After post-deposition annealing at high temperature (1000°C) in argon atmosphere for different durations (1, 2 and 3 h), bulk and interface properties of the films were studied by capacitance-voltage (CV), current-voltage (IV) and secondary ion mass spectrometry (SIMS) measurements. Electrical measurements show a decreasing shift of the flatband voltage indicating a diminution of the negative oxide charges with increasing annealing time. The SIMS measurements reveal accumulation of boron, sodium and potassium at the Al2O3/SiC interface but the accumulation decreases with annealing at 1000°C where also out diffusion of silicon into the Al2O3 film takes place.

  6. Mechanical characteristics of ultra-long horizontal nanocantilevers grown by real-time feedback control on focused-ion-beam chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Guo, Dengji; Warisawa, Shin'ichi; Ishihara, Sunao; Kometani, Reo

    2015-12-01

    Focused-ion-beam chemical vapour deposition (FIB-CVD) has been repeatedly proved to be a useful tool for the growth of three-dimensional (3D) micro- and nano-structures. The strategy of real-time feedback control on FIB-CVD was previously proposed and experimentally demonstrated to be effective for growing ultra-long horizontal nanocantilevers. To fabricate various nanoelectromechanical systems that consist of such types of nanocantilever structures, the mechanical characteristics of ultra-long horizontal nanocantilevers should be investigated. In this study, nanocantilevers with an overhang length of up to 35 μm were grown by using a 30 kV Ga+ FIB, a beam current of 0.50 pA and phenanthrene (C14H10) as the gas source to deposit a diamond-like carbon structure. The Young’s modulus of each nanocantilever was measured by bending the nanocantilever with a nanopillar whose Young’s modulus was known. The average density of each nanocantilever was calculated from the Young’s modulus and the measured resonant frequency. We found that the mechanical characteristics of each nanocantilever depended on the length of the nanocantilever if the strategy of real-time feedback control was applied in fabrication. The Young’s moduli and the averaged densities of the nanocantilevers with a length of 11 to 34 μm were found to be 86 to 254 GPa and 1950 to 5750 kg m-3, respectively. With the increase of the overhang length, the Young’s modulus and the average density were found to gradually increase.

  7. Size- and density-controlled deposition of Ag nanoparticle films by a novel low-temperature spray chemical vapour deposition method—research into mechanism, particle growth and optical simulation

    NASA Astrophysics Data System (ADS)

    Liu, Yang; Plate, Paul; Hinrichs, Volker; Köhler, Tristan; Song, Min; Manley, Phillip; Schmid, Martina; Bartsch, Peter; Fiechter, Sebastian; Lux-Steiner, Martha Ch.; Fischer, Christian-Herbert

    2017-04-01

    Ag nanoparticles have attracted interest for plasmonic absorption enhancement of solar cells. For this purpose, well-defined particle sizes and densities as well as very low deposition temperatures are required. Thus, we report here a new spray chemical vapour deposition method for producing Ag NP films with independent size and density control at substrate temperatures even below 100 °C, which is much lower than for many other techniques. This method can be used on different substrates to deposit Ag NP films. It is a reproducible, low-cost process which uses trimethylphosphine (hexafluoroacetylacetonato) silver as a precursor in alcoholic solution. By systematic variation of deposition parameters and classic experiments, mechanisms of particle growth and of deposition processes as well as the low decomposition temperature of the precursor could be explained. Using the 3D finite element method, absorption spectra of selected samples were simulated, which fitted well with the measured results. Hence, further applications of such Ag NP films for generating plasmonic near field can be predicted by the simulation.

  8. Effect of reaction parameters on the growth of MWCNTs using mesoporous Sb/MCM-41 by chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Atchudan, R.; Pandurangan, A.; Subramanian, K.

    2011-11-01

    Mesoporous Si-MCM-41 molecular sieve was synthesized hydrothermally and different wt.% of Sb (1.0, 2.0, 3.0, 5.0, 10.0, 15.0 and 20.0) was loaded on it by wet impregnation method. The Sb/MCM-41 materials were characterized by various physico-chemical techniques such as XRD, TGA and TEM. The TEM image showed a honeycomb structure of the host material. They were used as catalytic templates for the growth of MWCNTs by CVD method with different temperatures at 700, 800, 900 and 1000 °C using acetylene as a carbon precursor. The reaction temperature was optimized for the better formation of MWCNTs and they were purified and then characterized by XRD, SEM, HR-TEM and Raman spectroscopy techniques. The formation of MWCNTs with diameter in the range of 4-6 nm was observed from HR-TEM. The good thermal stability and high productivity of catalyst observed in this study revealed that the 2 wt.% Sb loaded MCM-41 could be a promising support for the catalytic synthesis of MWCNTs at 800 °C by CVD method.

  9. A spectrometer on chemical vapour deposition-diamond basis for the measurement of the charge-state distribution of heavy ions in a laser-generated plasma

    SciTech Connect

    Cayzac, Witold; Frank, Alexander; Schumacher, Dennis; Roth, Markus; Blazevic, Abel; Wamers, Felix; Traeger, Michael; Berdermann, Eleni; Voss, Bernd; Hessling, Thomas

    2013-04-15

    This article reports on the development and the first applications of a new spectrometer which enables the precise and time-resolved measurement of both the energy loss and the charge-state distribution of ion beams with 10 < Z < 30 at energies of 4-8 MeV/u after their interaction with a laser-generated plasma. The spectrometer is based on five 20 Multiplication-Sign 7 mm{sup 2} large and 20 {mu}m thick polycrystalline diamond samples produced via the Chemical Vapour Deposition (CVD) process and was designed with the help of ion-optical simulations. First experiments with the spectrometer were successfully carried out at GSI using {sup 48}Ca ions at an energy of 4.8 MeV/u interacting with a carbon plasma generated by the laser irradiation of a thin foil target. Owing to the high rate capability and the short response time of the spectrometer, pulsed ion beams with 10{sup 3}-10{sup 4} ions per bunch at a bunch frequency of 108 MHz could be detected. The temporal evolution of the five main charge states of the calcium ion beams as well as the corresponding energy loss values could be measured simultaneously. Due to the outstanding properties of diamond as a particle detector, a beam energy resolution ({Delta}E/E) Almost-Equal-To 0.1% could be reached using the presented experimental method, while a precision of 10% in the energy loss and charge-state distribution data was obtained.

  10. A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

    SciTech Connect

    Madito, M. J.; Bello, A.; Dangbegnon, J. K.; Momodu, D. Y.; Masikhwa, T. M.; Barzegar, F.; Manyala, N.; Oliphant, C. J.; Jordaan, W. A.; Fabiane, M.

    2016-01-07

    A bilayer graphene film obtained on copper (Cu) foil is known to have a significant fraction of non-Bernal (AB) stacking and on copper/nickel (Cu/Ni) thin films is known to grow over a large-area with AB stacking. In this study, annealed Cu foils for graphene growth were doped with small concentrations of Ni to obtain dilute Cu(Ni) alloys in which the hydrocarbon decomposition rate of Cu will be enhanced by Ni during synthesis of large-area AB-stacked bilayer graphene using atmospheric pressure chemical vapour deposition. The Ni doped concentration and the Ni homogeneous distribution in Cu foil were confirmed with inductively coupled plasma optical emission spectrometry and proton-induced X-ray emission. An electron backscatter diffraction map showed that Cu foils have a single (001) surface orientation which leads to a uniform growth rate on Cu surface in early stages of graphene growth and also leads to a uniform Ni surface concentration distribution through segregation kinetics. The increase in Ni surface concentration in foils was investigated with time-of-flight secondary ion mass spectrometry. The quality of graphene, the number of graphene layers, and the layers stacking order in synthesized bilayer graphene films were confirmed by Raman and electron diffraction measurements. A four point probe station was used to measure the sheet resistance of graphene films. As compared to Cu foil, the prepared dilute Cu(Ni) alloy demonstrated the good capability of growing large-area AB-stacked bilayer graphene film by increasing Ni content in Cu surface layer.

  11. A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Madito, M. J.; Bello, A.; Dangbegnon, J. K.; Oliphant, C. J.; Jordaan, W. A.; Momodu, D. Y.; Masikhwa, T. M.; Barzegar, F.; Fabiane, M.; Manyala, N.

    2016-01-01

    A bilayer graphene film obtained on copper (Cu) foil is known to have a significant fraction of non-Bernal (AB) stacking and on copper/nickel (Cu/Ni) thin films is known to grow over a large-area with AB stacking. In this study, annealed Cu foils for graphene growth were doped with small concentrations of Ni to obtain dilute Cu(Ni) alloys in which the hydrocarbon decomposition rate of Cu will be enhanced by Ni during synthesis of large-area AB-stacked bilayer graphene using atmospheric pressure chemical vapour deposition. The Ni doped concentration and the Ni homogeneous distribution in Cu foil were confirmed with inductively coupled plasma optical emission spectrometry and proton-induced X-ray emission. An electron backscatter diffraction map showed that Cu foils have a single (001) surface orientation which leads to a uniform growth rate on Cu surface in early stages of graphene growth and also leads to a uniform Ni surface concentration distribution through segregation kinetics. The increase in Ni surface concentration in foils was investigated with time-of-flight secondary ion mass spectrometry. The quality of graphene, the number of graphene layers, and the layers stacking order in synthesized bilayer graphene films were confirmed by Raman and electron diffraction measurements. A four point probe station was used to measure the sheet resistance of graphene films. As compared to Cu foil, the prepared dilute Cu(Ni) alloy demonstrated the good capability of growing large-area AB-stacked bilayer graphene film by increasing Ni content in Cu surface layer.

  12. A comprehensive understanding of the chemical vapour deposition of cadmium chalcogenides using Cd[(C6H5)2PSSe]2 single-source precursor: a density functional theory approach.

    PubMed

    Opoku, Francis; Asare-Donkor, Noah Kyame; Adimado, Anthony Adimado

    2016-01-01

    The phosphinato complexes of group IIB are of great interest for their potential toward technological applications. A gas phase mechanistic investigation of the chemical vapour deposition of cadmium chalcogenides from the decomposition of Cd[(C6H5)2PSSe]2, as a single source precursor is carried out and reported herein within the framework of density functional theory at the M06/LACVP* level of theory. The results reveal that the activation barriers and the product stabilities on the singlet potential energy surface (PES) favour CdS decomposition pathways, respectively. However, on the doublet PES, the activation barriers favour CdS while the product stabilities favour CdSe decomposition pathways, respectively. Contrary to the previously reported theoretical result for Cd[( (i) Pr)2PSSe]2, CdSe decomposition pathways were found to be the major pathways on both the singlet and the doublet PESs, respectively. Exploration of the complex gas phase mechanism and a detailed identification of the reaction intermediates enable us to understand and optimise selective growth process that occur in a chemical vapour deposition.Graphical abstractStructure of Cd[(C6H5)2PSSe]2 single-source precursor.

  13. Annealing effects on capacitance-voltage characteristics of a-Si/SiN(x) multilayer prepared using hot-wire chemical vapour deposition.

    PubMed

    Panchal, A K; Rai, D K; Solanki, C S

    2011-04-01

    Post-deposition annealing of a-Si/SiN(x) multilayer films at different temperature shows varying shift in high frequency (1 MHz) capacitance-voltage (HFCV) characteristics. Various a-Si/SiN(x) multilayer films were deposited using hot wire chemical vapor deposition (HWCVD) and annealed in the temperature range of 800 to 900 degrees C to precipitate Si quantum dots (Si-QD) in a-Si layers. HFCV measurements of the as-deposited and annealed films in metal-insulator-semiconductor (MIS) structures show hysterisis in C-V curves. The hysteresis in the as-deposited films and annealed films is attributed to charge trapping in Si-dangling bonds in a-Si layer and in Si-QD respectively. The charge trapping density in Si-QD increases with temperature while the interface defects density (D(it)) remains constant.

  14. Surface Modification by Physical Vapour Deposition,

    DTIC Science & Technology

    1983-07-13

    effect of the rare-earth metals is to form a stable oxide at the surface, or to form stable perovskites such as CaTiO3 or EuTiO3 , and thus prevent...Bunshah, "High Rate Deposition Of Hafnium By Activated Reactive Evaporation", Thin Solid Films, 63, 327, (1979). 5 B.E. Jacobson, R. Nimuagadda, R.F

  15. Impact of (111)-Oriented SrRuO3/Pt Tailored Electrode for Highly Reproducible Preparation of Metal Organic Chemical Vapour Deposited Pb(Zr,Ti)O3 Films for High Density Ferroelectric Random Access Memory Applications

    NASA Astrophysics Data System (ADS)

    Menou, Nicolas; Kuwabara, Hiroki; Funakubo, Hiroshi

    2007-04-01

    In the present paper we report a comparative study of the structural, morphologic, and electric properties of Pb(Zr,Ti)O3 films, deposited by pulsed metal-organic chemical vapour deposition (MOCVD), on different (111)-oriented bottom-electrode stacks (SrRuO3/Pt, Pt, and Ir substrates). The Pb input ratio in the MOCVD chamber was systematically modified for each deposition run to obtain PZT films with various compositions within the Pb process window. Our results clearly demonstrate that only PZT films deposited on SrRuO3 show high quality and reproducible properties throughout the process window, i.e., high (111) texture, low roughness (<5 nm), high Pr (˜40 μC/cm2), low Vc (<1 V), as well as a relatively low leakage current (˜ 10-5 A/cm2 at 1.5 V). This study provides further evidence that SrRuO3/Pt substrates are good candidates for integration in next-generation high-density ferroelectric random access memories (FeRAM).

  16. Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP

    SciTech Connect

    Mohandas, Reshma A.; Freeman, Joshua R. Rosamond, Mark C.; Chowdhury, Siddhant; Cunningham, John E.; Davies, A. Giles; Linfield, Edmund H.; Dean, Paul; Hatem, Osama; Ponnampalam, Lalitha; Fice, Martyn; Seeds, Alwyn J.; Cannard, Paul J.; Robertson, Michael J.; Moodie, David G.

    2016-04-21

    We demonstrate the generation of continuous wave terahertz (THz) frequency radiation from photomixers fabricated on both Fe-doped InGaAs and Fe-doped InGaAsP, grown by metal-organic chemical vapor deposition. The photomixers were excited using a pair of distributed Bragg reflector lasers with emission around 1550 nm, and THz radiation was emitted over a bandwidth of greater than 2.4 THz. Two InGaAs and four InGaAsP wafers with different Fe doping concentrations were investigated, with the InGaAs material found to outperform the InGaAsP in terms of emitted THz power. The dependencies of the emitted power on the photomixer applied bias, incident laser power, and material doping level were also studied.

  17. Resonant and nonresonant vibrational excitation of ammonia molecules in the growth of gallium nitride using laser-assisted metal organic chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Golgir, Hossein Rabiee; Zhou, Yun Shen; Li, Dawei; Keramatnejad, Kamran; Xiong, Wei; Wang, Mengmeng; Jiang, Li Jia; Huang, Xi; Jiang, Lan; Silvain, Jean Francois; Lu, Yong Feng

    2016-09-01

    The influence of exciting ammonia (NH3) molecular vibration in the growth of gallium nitride (GaN) was investigated by using an infrared laser-assisted metal organic chemical vapor deposition method. A wavelength tunable CO2 laser was used to selectively excite the individual vibrational modes. Resonantly exciting the NH-wagging mode (v2) of NH3 molecules at 9.219 μm led to a GaN growth rate of 84 μm/h, which is much higher than the reported results. The difference between the resonantly excited and conventional thermally populated vibrational states was studied via resonant and nonresonant vibrational excitations of NH3 molecules. Resonant excitation of various vibrational modes was achieved at 9.219, 10.35, and 10.719 μm, respectively. Nonresonant excitation was conducted at 9.201 and 10.591 μm, similar to conventional thermal heating. Compared to nonresonant excitation, resonant excitation noticeably promotes the GaN growth rate and crystalline quality. The full width at half maximum value of the XRD rocking curves of the GaN (0002) and GaN (10-12) diffraction peaks decreased at resonant depositions and reached its minimum value of 45 and 53 arcmin, respectively, at the laser wavelength of 9.219 μm. According to the optical emission spectroscopic studies, resonantly exciting the NH3 v2 mode leads to NH3 decomposition at room temperature, reduces the formation of the TMGa:NH3 adduct, promotes the supply of active species in GaN formation, and, therefore, results in the increased GaN growth rate.

  18. Investigation of chemical vapour deposition MoS2 field effect transistors on SiO2 and ZrO2 substrates

    NASA Astrophysics Data System (ADS)

    Liu, Xi; Chai, Yang; Liu, Zhaojun

    2017-04-01

    With the development of portable electronics, higher performance transistors are required to reduce the form factor and improve the performance of the devices. The key issue relies on developing transistors with outstanding electrical properties and low energy consumption at small scale. Here we demonstrate chemical vapor deposition (CVD) grown MoS2 transistors with a high on/off ratio using ZrO2 as a gate dielectric. Using 10 nm thick ZrO2, the transistor has an on/off ratio of 108, a sub-threshold swing of 0.1 V/dec, and a mobility of 64.66 cm2 V-1 s-1. Compared to the MoS2 devices grown on 300 nm SiO2, the electrical performance demonstrates an all round improvement, which indicates the high crystalline quality of MoS2/ZrO2. Owing to the high-k ZrO2 dielectrics, the MoS2 transistor has a high on/off ratio, a low operating voltage, and good channel modulation capability which ensures that MoS2 is a good candidate for low power electronics.

  19. Chemical vapour deposition of graphene on Nk(111) and Co(0001) and intercalation with Au to study Dirac Cone Formation and Rashba splitting

    SciTech Connect

    Sanchez-Barriga, J.; Vescovo, E.; Varykhalov, A.; Scholz, M.R.; Rader, O.; Marchenko, D.; Rybkin, A.

    2010-01-01

    We show in detail monitoring by photoelectron spectroscopy how graphene can be grown by chemical vapor deposition on the transition-metal surfaces Ni(111) and Co(0001) and intercalated by a monoatomic layer of Au. For both systems, a linear E(k) dispersion of massless Dirac fermions appears in the graphene {pi}-band in the vicinity of the Fermi energy. In order to study ferromagnetism and spin-orbit effects by spin- and angle-resolved photoelectron spectroscopy, the sample must be magnetized in remanence. To this end, a W(110) substrate is prepared, its cleanliness verified by photoemission from W(110) surface states and surface core levels, and epitaxial Ni(111) and Co(0001) thin films are grown on top. Spin-resolved photoemission from the {pi}-band shows that the ferromagnetic polarization of graphene/Ni(111) and graphene/Co(0001) is negligible and that graphene on Ni(111) is after intercalation of Au spin-orbit split by the Rashba effect.

  20. Investigation of chemical vapour deposition MoS2 field effect transistors on SiO2 and ZrO2 substrates.

    PubMed

    Liu, Xi; Chai, Yang; Liu, Zhaojun

    2017-04-21

    With the development of portable electronics, higher performance transistors are required to reduce the form factor and improve the performance of the devices. The key issue relies on developing transistors with outstanding electrical properties and low energy consumption at small scale. Here we demonstrate chemical vapor deposition (CVD) grown MoS2 transistors with a high on/off ratio using ZrO2 as a gate dielectric. Using 10 nm thick ZrO2, the transistor has an on/off ratio of 10(8), a sub-threshold swing of 0.1 V/dec, and a mobility of 64.66 cm(2) V(-1) s(-1). Compared to the MoS2 devices grown on 300 nm SiO2, the electrical performance demonstrates an all round improvement, which indicates the high crystalline quality of MoS2/ZrO2. Owing to the high-k ZrO2 dielectrics, the MoS2 transistor has a high on/off ratio, a low operating voltage, and good channel modulation capability which ensures that MoS2 is a good candidate for low power electronics.

  1. CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: A Simple Route of Morphology Control and Structural and Optical Properties of ZnO Grown by Metal-Organic Chemical Vapour Deposition

    NASA Astrophysics Data System (ADS)

    Fan, Hai-Bo; Yang, Shao-Yan; Zhang, Pan-Feng; Wei, Hong-Yuan; Liu, Xiang-Lin; Jiao, Chun-Mei; Zhu, Qin-Sheng; Chen, Yong-Hai; Wang, Zhan-Guo

    2008-08-01

    Employing the metal-organic chemical vapour deposition (MOCVD) technique, we prepare ZnO samples with different morphologies from the film to nanorods through conveniently changing the bubbled diethylzinc flux (BDF) and the carrier gas flux of oxygen (OCGF). The scanning electron microscope images indicate that small BDF and OCGF induce two-dimensional growth while the large ones avail quasi-one-dimensional growth. X-ray diffraction (XRD) and Raman scattering analyses show that all of the morphology-dependent ZnO samples are of high crystal quality with a c-axis orientation. From the precise shifts of the 2θ locations of ZnO (002) face in the XRD patterns and the E2 (high) locations in the Raman spectra, we deduce that the compressive stress forms in the ZnO samples and is strengthened with the increasing BDF and OCGF. Photoluminescence spectroscopy results show all the samples have a sharp ultraviolet luminescent band without any defects-related emission. Upon the experiments a possible growth mechanism is proposed.

  2. Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001)

    NASA Astrophysics Data System (ADS)

    Kim, Jun-Young; Ionescu, Adrian; Mansell, Rhodri; Farrer, Ian; Oehler, Fabrice; Kinane, Christy J.; Cooper, Joshaniel F. K.; Steinke, Nina-Juliane; Langridge, Sean; Stankiewicz, Romuald; Humphreys, Colin J.; Cowburn, Russell P.; Holmes, Stuart N.; Barnes, Crispin H. W.

    2017-01-01

    Structural and magnetic properties of 1-10 nm thick Fe films deposited on GaN(0001) were investigated. In-situ reflecting high energy electron diffraction images indicated a α-Fe(110)/GaN(0001) growth of the 3D Volmer-Weber type. The α-Fe(110) X-ray diffraction peak showed a 1° full-width at half-maximum, indicating ≈20 nm grain sizes. A significant reduction in Fe atomic moment from its bulk value was observed for films thinner than 4 nm. Both GaN/Fe interface roughness and Fe film coercivity increased with Fe thickness, indicating a possible deterioration of Fe crystalline quality. Magnetic anisotropy was mainly uniaxial for all films while hexagonal anisotropies appeared for thicknesses higher than 3.7 nm.

  3. Growth of n-type polycrystalline pyrite (FeS 2) films by metalorganic chemical vapour deposition and their electrical characterization

    NASA Astrophysics Data System (ADS)

    Oertel, J.; Ellmer, K.; Bohne, W.; Röhrich, J.; Tributsch, H.

    1999-03-01

    The compound semiconductor pyrite (FeS 2) has attracted attention as a possible absorber material for thin film solar cells. In this article it is shown for the first time that polycrystalline pyrite films which normally show p-type conductivity, can in situ be doped n-type by using cobalt as a dopant above a concentration of 0.3 at%. The chemical cobalt concentration - determined by high energy heavy ion Rutherford backscattering analysis - is proportional to the cobalt-to-iron ratio in the gas phase. The carrier concentrations are very high (>10 20 cm -3) and the Seebeck coefficients are low (<70 μV/K), pointing at degenerated semiconductor properties. The carrier transport in the films can be described by the grain barrier limited transport model described by Seto (1975). From the temperature dependence of the Hall mobility, barrier heights of 7-37 meV have been determined. The trap density in the grain barriers is about 2×10 13 cm -2, a value which is much higher than in polycrystalline silicon or CdS-films.

  4. Experimental and theoretical rationalization of the growth mechanism of silicon quantum dots in non-stoichiometric SiN x : role of chlorine in plasma enhanced chemical vapour deposition.

    PubMed

    Mon-Pérez, E; Salazar, J; Ramos, E; Salazar, J Santoyo; Suárez, A López; Dutt, A; Santana, G; Monroy, B Marel

    2016-11-11

    Silicon quantum dots (Si-QDs) embedded in an insulator matrix are important from a technological and application point of view. Thus, being able to synthesize them in situ during the matrix growth process is technologically advantageous. The use of SiH2Cl2 as the silicon precursor in the plasma enhanced chemical vapour deposition (PECVD) process allows us to obtain Si-QDs without post-thermal annealing. Foremost in this work, is a theoretical rationalization of the mechanism responsible for Si-QD generation in a film including an analysis of the energy released by the extraction of HCl and the insertion of silylene species into the terminal surface bonds. From the results obtained using density functional theory (DFT), we propose an explanation of the mechanism responsible for the formation of Si-QDs in non-stoichiometric SiN x starting from chlorinated precursors in a PECVD system. Micrograph images obtained through transmission electron microscopy confirmed the presence of Si-QDs, even in nitrogen-rich (N-rich) samples. The film stoichiometry was controlled by varying the growth parameters, in particular the NH3/SiH2Cl2 ratio and hydrogen dilution. Experimental and theoretical results together show that using a PECVD system, along with chlorinated precursors it is possible to obtain Si-QDs at a low substrate temperature without annealing treatment. The optical property studies carried out in the present work highlight the prospects of these thin films for down shifting and as an antireflection coating in silicon solar cells.

  5. Experimental and theoretical rationalization of the growth mechanism of silicon quantum dots in non-stoichiometric SiN x : role of chlorine in plasma enhanced chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Mon-Pérez, E.; Salazar, J.; Ramos, E.; Santoyo Salazar, J.; López Suárez, A.; Dutt, A.; Santana, G.; Marel Monroy, B.

    2016-11-01

    Silicon quantum dots (Si-QDs) embedded in an insulator matrix are important from a technological and application point of view. Thus, being able to synthesize them in situ during the matrix growth process is technologically advantageous. The use of SiH2Cl2 as the silicon precursor in the plasma enhanced chemical vapour deposition (PECVD) process allows us to obtain Si-QDs without post-thermal annealing. Foremost in this work, is a theoretical rationalization of the mechanism responsible for Si-QD generation in a film including an analysis of the energy released by the extraction of HCl and the insertion of silylene species into the terminal surface bonds. From the results obtained using density functional theory (DFT), we propose an explanation of the mechanism responsible for the formation of Si-QDs in non-stoichiometric SiN x starting from chlorinated precursors in a PECVD system. Micrograph images obtained through transmission electron microscopy confirmed the presence of Si-QDs, even in nitrogen-rich (N-rich) samples. The film stoichiometry was controlled by varying the growth parameters, in particular the NH3/SiH2Cl2 ratio and hydrogen dilution. Experimental and theoretical results together show that using a PECVD system, along with chlorinated precursors it is possible to obtain Si-QDs at a low substrate temperature without annealing treatment. The optical property studies carried out in the present work highlight the prospects of these thin films for down shifting and as an antireflection coating in silicon solar cells.

  6. Chemical vapour transport of III-V semiconductor materials

    NASA Astrophysics Data System (ADS)

    Davis, Mervyn Howard

    Over the temperature range 770 to 1310 K, however, two bromides compete for prominence, dependent upon temperature. In both instances, it is shown that vapour transport becomes rate limited at low temperature. Further to the chemical vapour transport of indium phosphide, the dissociative sublimation of the compound has also been investigated. Raman spectroscopy has been used to identify high temperature molecular species involved in vapour transport of III-V semiconductor materials. Supplementary work has been performed on the thermochemistry of indium monobromide. The heat of formation of indium bromide crystals has been determined using a solution calormetric technique. Differential scanning calorimetry was used to measure the heat capacity and heat of fusion, of the salt. An entrainment study of the evaporation of liquid indium monobromide was undertaken to yield a value for its heat of vaporisation. Using a statistical thermodynamic approach, the heat capacity of the vapour was calculated. Collating the information, a value for the heat of formation of indium monobromide gas at 1000 K has been calculated for use in other thermodynamic calculations.

  7. Infrared hyperspectral imaging for chemical vapour detection

    NASA Astrophysics Data System (ADS)

    Ruxton, K.; Robertson, G.; Miller, W.; Malcolm, G. P. A.; Maker, G. T.; Howle, C. R.

    2012-10-01

    Active hyperspectral imaging is a valuable tool in a wide range of applications. One such area is the detection and identification of chemicals, especially toxic chemical warfare agents, through analysis of the resulting absorption spectrum. This work presents a selection of results from a prototype midwave infrared (MWIR) hyperspectral imaging instrument that has successfully been used for compound detection at a range of standoff distances. Active hyperspectral imaging utilises a broadly tunable laser source to illuminate the scene with light at a range of wavelengths. While there are a number of illumination methods, the chosen configuration illuminates the scene by raster scanning the laser beam using a pair of galvanometric mirrors. The resulting backscattered light from the scene is collected by the same mirrors and focussed onto a suitable single-point detector, where the image is constructed pixel by pixel. The imaging instrument that was developed in this work is based around an IR optical parametric oscillator (OPO) source with broad tunability, operating in the 2.6 to 3.7 μm (MWIR) and 1.5 to 1.8 μm (shortwave IR, SWIR) spectral regions. The MWIR beam was primarily used as it addressed the fundamental absorption features of the target compounds compared to the overtone and combination bands in the SWIR region, which can be less intense by more than an order of magnitude. We show that a prototype NCI instrument was able to locate hydrocarbon materials at distances up to 15 metres.

  8. Efficient planar heterojunction perovskite solar cells by vapour deposition.

    PubMed

    Liu, Mingzhen; Johnston, Michael B; Snaith, Henry J

    2013-09-19

    Many different photovoltaic technologies are being developed for large-scale solar energy conversion. The wafer-based first-generation photovoltaic devices have been followed by thin-film solid semiconductor absorber layers sandwiched between two charge-selective contacts and nanostructured (or mesostructured) solar cells that rely on a distributed heterojunction to generate charge and to transport positive and negative charges in spatially separated phases. Although many materials have been used in nanostructured devices, the goal of attaining high-efficiency thin-film solar cells in such a way has yet to be achieved. Organometal halide perovskites have recently emerged as a promising material for high-efficiency nanostructured devices. Here we show that nanostructuring is not necessary to achieve high efficiencies with this material: a simple planar heterojunction solar cell incorporating vapour-deposited perovskite as the absorbing layer can have solar-to-electrical power conversion efficiencies of over 15 per cent (as measured under simulated full sunlight). This demonstrates that perovskite absorbers can function at the highest efficiencies in simplified device architectures, without the need for complex nanostructures.

  9. Heat stress in chemical protective clothing: porosity and vapour resistance.

    PubMed

    Havenith, George; den Hartog, Emiel; Martini, Svein

    2011-05-01

    Heat strain in chemical protective clothing is an important factor in industrial and military practice. Various improvements to the clothing to alleviate strain while maintaining protection have been attempted. More recently, selectively permeable membranes have been introduced to improve protection, but questions are raised regarding their effect on heat strain. In this paper the use of selectively permeable membranes with low vapour resistance was compared to textile-based outer layers with similar ensemble vapour resistance. For textile-based outer layers, the effect of increasing air permeability was investigated. When comparing ensembles with a textile vs. a membrane outer layer that have similar heat and vapour resistances measured for the sum of fabric samples, a higher heat strain is observed in the membrane ensemble, as in actual wear, and the air permeability of the textile version improves ventilation and allows better cooling by sweat evaporation. For garments with identical thickness and static dry heat resistance, but differing levels of air permeability, a strong correlation of microclimate ventilation due to wind and movement with air permeability was observed. This was reflected in lower values of core and skin temperatures and heart rate for garments with higher air permeability. For heart rate and core temperature the two lowest and the two highest air permeabilities formed two distinct groups, but they did not differ within these groups. Based on protection requirements, it is concluded that air permeability increases can reduce heat strain levels allowing optimisation of chemical protective clothing. STATEMENT OF RELEVANCE: In this study on chemical, biological, radiological and nuclear (CBRN) protective clothing, heat strain is shown to be significantly higher with selectively permeable membranes compared to air permeable ensembles. Optimisation of CBRN personal protective equipment needs to balance sufficient protection with reduced heat

  10. Photocatalytic property of titanium dioxide thin films deposited by radio frequency magnetron sputtering in argon and water vapour plasma

    NASA Astrophysics Data System (ADS)

    Sirghi, L.; Hatanaka, Y.; Sakaguchi, K.

    2015-10-01

    The present work is investigating the photocatalytic activity of TiO2 thin films deposited by radiofrequency magnetron sputtering of a pure TiO2 target in Ar and Ar/H2O (pressure ratio 40/3) plasmas. Optical absorption, structure, surface morphology and chemical structure of the deposited films were comparatively studied. The films were amorphous and included a large amount of hydroxyl groups (about 5% of oxygen atoms were bounded to hydrogen) irrespective of the intentional content of water in the deposition chamber. Incorporation of hydroxyl groups in the film deposited in pure Ar plasma is explained as contamination of the working gas with water molecules desorbed by plasma from the deposition chamber walls. However, intentional input of water vapour into the discharge chamber decreased the deposition speed and roughness of the deposited films. The good photocatalytic activity of the deposited films could be attributed hydroxyl groups in their structures.

  11. Chemical vapor deposition growth

    NASA Technical Reports Server (NTRS)

    Ruth, R. P.; Manasevit, H. M.; Kenty, J. L.; Moudy, L. A.; Simpson, W. I.; Yang, J. J.

    1976-01-01

    A chemical vapor deposition (CVD) reactor system with a vertical deposition chamber was used for the growth of Si films on glass, glass-ceramic, and polycrystalline ceramic substrates. Silicon vapor was produced by pyrolysis of SiH4 in a H2 or He carrier gas. Preliminary deposition experiments with two of the available glasses were not encouraging. Moderately encouraging results, however, were obtained with fired polycrystalline alumina substrates, which were used for Si deposition at temperatures above 1,000 C. The surfaces of both the substrates and the films were characterized by X-ray diffraction, reflection electron diffraction, scanning electron microscopy optical microscopy, and surface profilometric techniques. Several experiments were conducted to establish baseline performance data for the reactor system, including temperature distributions on the sample pedestal, effects of carrier gas flow rate on temperature and film thickness, and Si film growth rate as a function of temperature.

  12. Controlled oxidation of iron nanoparticles in chemical vapour synthesis

    NASA Astrophysics Data System (ADS)

    Ruusunen, Jarno; Ihalainen, Mika; Koponen, Tarmo; Torvela, Tiina; Tenho, Mikko; Salonen, Jarno; Sippula, Olli; Joutsensaari, Jorma; Jokiniemi, Jorma; Lähde, Anna

    2014-02-01

    In the present study, iron oxide nanoparticles (primary particle size of 80-90 nm) with controlled oxidation state were prepared via an atmospheric pressure chemical vapour synthesis (APCVS) method. Iron pentacarbonyl [Fe(CO)5], a precursor material, was thermally decomposed to iron in the APCVS reactor. Subsequently, the iron was oxidized with controlled amount of oxygen in the reactor to produce nearly pure magnetite or haematite particles depending on the oxygen concentration. Size, morphology and crystal structure of the synthesized nanoparticles were studied with scanning mobility particle sizer (SMPS), transmission electron microscopy (TEM) and X-ray diffraction (XRD). In addition, thermodynamic equilibrium calculations and computational fluid dynamics model were used to predict the oxidation state of the iron oxides and the reaction conditions during mixing. Aggregates of crystalline particles were formed, determined as magnetite at the oxygen volumetric fraction of 0.1 % and haematite at volumetric fraction of 0.5 %, according to the XRD. The geometric mean electrical mobility diameter of the aggregates increased from 110 to 155 nm when the volumetric fraction of oxygen increased from 0.1 to 0.5 %, determined using the SMPS. The aggregates were highly sintered based on TEM analyses. As a conclusion, APCVS method can be used to produce nearly pure crystalline magnetite or haematite nanoparticles with controlled oxidation in a continuous one-stage gas-phase process.

  13. Synthesis of Pt nanowires with the participation of physical vapour deposition

    NASA Astrophysics Data System (ADS)

    Dobrzański, Leszek A.; Szindler, Marek; Pawlyta, Mirosława; Szindler, Magdalena M.; Boryło, Paulina; Tomiczek, Błazej

    2016-01-01

    The following paper presents the possibility of formation of Pt nanowires, achieved by a three-step method consisting of conformal deposition of a carbon nanotube and conformal coverage with platinum by physical vapour deposition, followed by removal of the carbonaceous template. The characterization of this new nanostructure was carried out through scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD).

  14. Sub-10-nm patterning via directed self-assembly of block copolymer films with a vapour-phase deposited topcoat

    NASA Astrophysics Data System (ADS)

    Suh, Hyo Seon; Kim, Do Han; Moni, Priya; Xiong, Shisheng; Ocola, Leonidas E.; Zaluzec, Nestor J.; Gleason, Karen K.; Nealey, Paul F.

    2017-07-01

    Directed self-assembly (DSA) of the domain structure in block copolymer (BCP) thin films is a promising approach for sub-10-nm surface patterning. DSA requires the control of interfacial properties on both interfaces of a BCP film to induce the formation of domains that traverse the entire film with a perpendicular orientation. Here we show a methodology to control the interfacial properties of BCP films that uses a polymer topcoat deposited by initiated chemical vapour deposition (iCVD). The iCVD topcoat forms a crosslinked network that grafts to and immobilizes BCP chains to create an interface that is equally attractive to both blocks of the underlying copolymer. The topcoat, in conjunction with a chemically patterned substrate, directs the assembly of the grating structures in BCP films with a half-pitch dimension of 9.3 nm. As the iCVD topcoat can be as thin as 7 nm, it is amenable to pattern transfer without removal. The ease of vapour-phase deposition, applicability to high-resolution BCP systems and integration with pattern-transfer schemes are attractive properties of iCVD topcoats for industrial applications.

  15. Sub-10-nm patterning via directed self-assembly of block copolymer films with a vapour-phase deposited topcoat

    DOE PAGES

    Suh, Hyo Seon; Kim, Do Han; Moni, Priya; ...

    2017-03-27

    Directed self-assembly (DSA) of the domain structure in block copolymer (BCP) thin films is a promising approach for sub-10-nm surface patterning. DSA requires the control of interfacial properties on both interfaces of a BCP film to induce the formation of domains that traverse the entire film with a perpendicular orientation. Here we show a methodology to control the interfacial properties of BCP films that uses a polymer topcoat deposited by initiated chemical vapour deposition (iCVD). The iCVD topcoat forms a crosslinked network that grafts to and immobilizes BCP chains to create an interface that is equally attractive to both blocksmore » of the underlying copolymer. The topcoat, in conjunction with a chemically patterned substrate, directs the assembly of the grating structures in BCP films with a half-pitch dimension of 9.3 nm. As the iCVD topcoat can be as thin as 7 nm, it is amenable to pattern transfer without removal. As a result, the ease of vapour-phase deposition, applicability to high-resolution BCP systems and integration with pattern-transfer schemes are attractive properties of iCVD topcoats for industrial applications.« less

  16. Investigations of vapour-phase deposited transition metal dichalcogenide films for future electronic applications

    NASA Astrophysics Data System (ADS)

    Gatensby, Riley; Hallam, Toby; Lee, Kangho; McEvoy, Niall; Duesberg, Georg S.

    2016-11-01

    Two-dimensional (2D) transitional metal dichalcogenides (TMDs) are of major interest to the research and electrical engineering community. A number of TMDs are semiconducting and have a wide range of bandgaps, they can exhibit n- or p-type behaviour, and the electronic structure changes with the number of layers. These exceptional properties hold much promise for a host of electrical applications including low- or high power field-effect transistors, sensors and diodes. Moreover, the unique optical properties of TMDs make them attractive for optoelectronic applications such as light-emitting diodes, photodiodes, and photovoltaic cells. A prerequisite for all of these applications is a synthesis route which is well controlled, scalable, reproducible and compatible with semiconductor industry process flows. Thermally assisted conversion (TAC), a variant of chemical vapour deposition, shows much promise for meeting these requirements. Herein we review the current progress and challenges of research on 2D semiconducting materials for electronics with a special focus on TAC produced TMD thin films.

  17. Preparation and internal stress estimation of BN films by ion mixing and vapour deposition technique

    NASA Astrophysics Data System (ADS)

    Hanaki, S.; Leng, B.; Uchida, H.

    2010-07-01

    Boron Nitride (BN) films were synthesized onto silicone wafer by depositing B metal vapour under simultaneous irradiation of N ions. Here, film thickness, ion beam energy and transport ratio (B/N) were selected as a preparation parameter and they were controlled in the range of 0.2-1μm, 0.2~2keV and 1~5, respectively. The BN films prepared were characterized using several analytical techniques and their internal stresses were estimated using Stoney's equation. From Fourier transform infrared spectroscopy, it was found that use of low energy N ions is effective for the formation of cubic BN (cBN) phase using ion mixing and vapour deposition (IVD) technique. At this condition, high compressive stress is measured and strong correlations were found among crystal structure, internal stress and Knoop hardness of BN films.

  18. Ion Vapour Deposited (IVD) Aluminium Coatings for the Corrosion Protection of High Strength Steel

    DTIC Science & Technology

    1991-04-01

    4 ARL-MAT-R-123 AR-006-584 AD-A242 738 A ,- "" DEPARTMENT OF DEFENCE DEFENCE SCIENCE AND TECHNOLOGY ORGANISATION AERONAUTICAL RESEARCH LABORATORY...SCIENCE AND TECHNOLOGY ORGANISATION AERONAUTICAL RESEARCH LABORATORY Aircraft Materials Report 123 ION VAPOUR DEPOSITED (lVD) ALUMINIUM COATINGS FOR...the steel substrate provided the coating was sufficiently thick and its porosity low. Exposure of IID coated steel to aqzeous enviroments was found to

  19. Material design of plasma-enhanced chemical vapour deposition SiCH films for low-k cap layers in the further scaling of ultra-large-scale integrated devices-Cu interconnects

    NASA Astrophysics Data System (ADS)

    Shimizu, Hideharu; Nagano, Shuji; Uedono, Akira; Tajima, Nobuo; Momose, Takeshi; Shimogaki, Yukihiro

    2013-10-01

    Cap layers for Cu interconnects in ultra-large-scale integrated devices (ULSIs), with a low dielectric constant (k-value) and strong barrier properties against Cu and moisture diffusion, are required for the future further scaling of ULSIs. There is a trade-off, however, between reducing the k-value and maintaining strong barrier properties. Using quantum mechanical simulations and other theoretical computations, we have designed ideal dielectrics: SiCH films with Si-C2H4-Si networks. Such films were estimated to have low porosity and low k; thus they are the key to realizing a cap layer with a low k and strong barrier properties against diffusion. For fabricating these ideal SiCH films, we designed four novel precursors: isobutyl trimethylsilane, diisobutyl dimethylsilane, 1, 1-divinylsilacyclopentane and 5-silaspiro [4,4] noname, based on quantum chemical calculations, because such fabrication is difficult by controlling only the process conditions in plasma-enhanced chemical vapor deposition (PECVD) using conventional precursors. We demonstrated that SiCH films prepared using these newly designed precursors had large amounts of Si-C2H4-Si networks and strong barrier properties. The pore structure of these films was then analyzed by positron annihilation spectroscopy, revealing that these SiCH films actually had low porosity, as we designed. These results validate our material and precursor design concepts for developing a PECVD process capable of fabricating a low-k cap layer.

  20. Material design of plasma-enhanced chemical vapour deposition SiCH films for low-k cap layers in the further scaling of ultra-large-scale integrated devices-Cu interconnects.

    PubMed

    Shimizu, Hideharu; Nagano, Shuji; Uedono, Akira; Tajima, Nobuo; Momose, Takeshi; Shimogaki, Yukihiro

    2013-10-01

    Cap layers for Cu interconnects in ultra-large-scale integrated devices (ULSIs), with a low dielectric constant (k-value) and strong barrier properties against Cu and moisture diffusion, are required for the future further scaling of ULSIs. There is a trade-off, however, between reducing the k-value and maintaining strong barrier properties. Using quantum mechanical simulations and other theoretical computations, we have designed ideal dielectrics: SiCH films with Si-C2H4-Si networks. Such films were estimated to have low porosity and low k; thus they are the key to realizing a cap layer with a low k and strong barrier properties against diffusion. For fabricating these ideal SiCH films, we designed four novel precursors: isobutyl trimethylsilane, diisobutyl dimethylsilane, 1, 1-divinylsilacyclopentane and 5-silaspiro [4,4] noname, based on quantum chemical calculations, because such fabrication is difficult by controlling only the process conditions in plasma-enhanced chemical vapor deposition (PECVD) using conventional precursors. We demonstrated that SiCH films prepared using these newly designed precursors had large amounts of Si-C2H4-Si networks and strong barrier properties. The pore structure of these films was then analyzed by positron annihilation spectroscopy, revealing that these SiCH films actually had low porosity, as we designed. These results validate our material and precursor design concepts for developing a PECVD process capable of fabricating a low-k cap layer.

  1. Chemical vapor deposition growth

    NASA Technical Reports Server (NTRS)

    Ruth, R. P.; Manasevit, H. M.; Kenty, J. L.; Moudy, L. A.; Simpson, W. I.; Yang, J. J.

    1976-01-01

    The chemical vapor deposition (CVD) method for the growth of Si sheet on inexpensive substrate materials is investigated. The objective is to develop CVD techniques for producing large areas of Si sheet on inexpensive substrate materials, with sheet properties suitable for fabricating solar cells meeting the technical goals of the Low Cost Silicon Solar Array Project. Specific areas covered include: (1) modification and test of existing CVD reactor system; (2) identification and/or development of suitable inexpensive substrate materials; (3) experimental investigation of CVD process parameters using various candidate substrate materials; (4) preparation of Si sheet samples for various special studies, including solar cell fabrication; (5) evaluation of the properties of the Si sheet material produced by the CVD process; and (6) fabrication and evaluation of experimental solar cell structures, using standard and near-standard processing techniques.

  2. Formation and Yield of Multi-Walled Carbon Nanotubes Synthesized via Chemical Vapour Deposition Routes Using Different Metal-Based Catalysts of FeCoNiAl, CoNiAl and FeNiAl-LDH

    PubMed Central

    Hussein, Mohd Zobir; Mohamad Jaafar, Adila; Hj. Yahaya, Asmah; Masarudin, Mas Jaffri; Zainal, Zulkarnain

    2014-01-01

    Multi-walled carbon nanotubes (MWCNTs) were prepared via chemical vapor deposition (CVD) using a series of different catalysts, derived from FeCoNiAl, CoNiAl and FeNiAl layered double hydroxides (LDHs). Catalyst-active particles were obtained by calcination of LDHs at 800 °C for 5 h. Nitrogen and hexane were used as the carrier gas and carbon source respectively, for preparation of MWCNTs using CVD methods at 800 °C. MWCNTs were allowed to grow for 30 min on the catalyst spread on an alumina boat in a quartz tube. The materials were subsequently characterized through X-ray diffraction, Fourier transform infrared spectroscopy, surface area analysis, field emission scanning electron microscopy and transmission electron microscopy. It was determined that size and yield of MWCNTs varied depending on the type of LDH catalyst precursor that is used during synthesis. MWCNTs obtained using CoNiAl-LDH as the catalyst precursor showed smaller diameter and higher yield compared to FeCoNiAl and FeNiAl LDHs. PMID:25380526

  3. A computer-controlled system for generation of chemical vapours in in vitro dermal uptake studies.

    PubMed

    Rauma, Matias; Johanson, Gunnar

    2007-02-01

    Recent work in our laboratory suggests that dermal absorption and desorption of volatile chemicals may be assessed in vitro by thermogravimetric analysis (TGA), i.e. by passing chemical vapour over a piece of skin while recording the weight increase at constant temperature and humidity. This paper describes a high-precision automated vapour-generating system for use with the TGA equipment. The system consists of computer-controlled magnetic valves and mass flow meters that split and redirect a flow of pure, dry air through different stainless-steel gas wash bottles thermostated to 25.00+/-0.05 degrees C. Each wash bottle is filled with a neat volatile chemical and designed so that the air leaving reaches 100% saturation within seconds, as shown with cyclohexanone. The air leaving the wash bottles are combined and directed via stainless-steel liners to the skin piece in the TGA chamber. The liners are heated to 30 degrees C to prevent condensation of water or chemical. Special computer software was developed to allow automatic runs with different wash bottles (chemicals) and air flows over several days. A number of measurements were made to characterize the stability and reproducibility of the vapour-generating system. We have developed a computer-controlled vapour-generating system for use in measurements of dermal absorption of chemicals by thermal gravimetry. The system has high stability and reproducibility and produces little noise.

  4. Chemical vapor deposition growth

    NASA Technical Reports Server (NTRS)

    Ruth, R. P.; Manasevit, H. M.; Campbell, A. G.; Johnson, R. E.; Kenty, J. L.; Moudy, L. A.; Shaw, G. L.; Simpson, W. I.; Yang, J. J.

    1978-01-01

    The objective was to investigate and develop chemical vapor deposition (CVD) techniques for the growth of large areas of Si sheet on inexpensive substrate materials, with resulting sheet properties suitable for fabricating solar cells that would meet the technical goals of the Low Cost Silicon Solar Array Project. The program involved six main technical tasks: (1) modification and test of an existing vertical-chamber CVD reactor system; (2) identification and/or development of suitable inexpensive substrate materials; (3) experimental investigation of CVD process parameters using various candidate substrate materials; (4) preparation of Si sheet samples for various special studies, including solar cell fabrication; (5) evaluation of the properties of the Si sheet material produced by the CVD process; and (6) fabrication and evaluation of experimental solar cell structures, using impurity diffusion and other standard and near-standard processing techniques supplemented late in the program by the in situ CVD growth of n(+)/p/p(+) sheet structures subsequently processed into experimental cells.

  5. Structure and stability characterization of anti-adhesion self-assembled monolayers formed by vapour deposition for NIL use

    NASA Astrophysics Data System (ADS)

    Garidel, Sophie; Zelsmann, Marc; Voisin, Pauline; Rochat, Nevine; Michallon, Philippe

    2007-03-01

    Anti-sticking efficiency remains a key issue in nanoimprint lithography. In order to address this problem, a selfassembled monolayer (SAM) of a fluorinated silane release agent is generally applied to the stamp surface, either in wet or in vapour phase. We present here the study on vapour deposition of (tridecafluoro-1,1,2,2-tetrahydrooctyl)TriChloroSilane (F 13-TCS) and wet and vapour deposition of a commercial product, OPTOOL DSX from Daikin. They are both fluorinated silanes used for the formation of anti-adhesive layers in nanoimprint lithography. Results will be compared in term of anti-adhesion properties and homogeneity for the obtained layers. Characterizations are made by means of contact angle measurements, Fourier Transform Infra-Red analysis and Atomic Force Microscopy observations. The vapour phase deposition of F 13-TCS allows us to reach surface energies as low as 11mN/m without increasing initial roughness. OPTOOL DSX TM deposition in wet phase presents comparable results, but with an increased roughness mainly due to the deposition procedure. The durability of the formed layers was investigated as a function of number of prints. For both materials, a significant degradation of the anti-adhesion properties occurs after few imprinted dies.

  6. A mechanical-force-driven physical vapour deposition approach to fabricating complex hydride nanostructures

    NASA Astrophysics Data System (ADS)

    Pang, Yuepeng; Liu, Yongfeng; Gao, Mingxia; Ouyang, Liuzhang; Liu, Jiangwen; Wang, Hui; Zhu, Min; Pan, Hongge

    2014-03-01

    Nanoscale hydrides desorb and absorb hydrogen at faster rates and lower temperatures than bulk hydrides because of their high surface areas, abundant grain boundaries and short diffusion distances. No current methods exist for the direct fabrication of nanoscale complex hydrides (for example, alanates, borohydrides) with unique morphologies because of their extremely high reducibility, relatively low thermodynamic stability and complicated elemental composition. Here, we demonstrate a mechanical-force-driven physical vapour deposition procedure for preparing nanoscale complex hydrides without scaffolds or supports. Magnesium alanate nanorods measuring 20-40 nm in diameter and lithium borohydride nanobelts measuring 10-40 nm in width are successfully synthesised on the basis of the one-dimensional structure of the corresponding organic coordination polymers. The dehydrogenation kinetics of the magnesium alanate nanorods are improved, and the nanorod morphology persists through the dehydrogenation-hydrogenation process. Our findings may facilitate the fabrication of such hydrides with improved hydrogen storage properties for practical applications.

  7. A mechanical-force-driven physical vapour deposition approach to fabricating complex hydride nanostructures.

    PubMed

    Pang, Yuepeng; Liu, Yongfeng; Gao, Mingxia; Ouyang, Liuzhang; Liu, Jiangwen; Wang, Hui; Zhu, Min; Pan, Hongge

    2014-03-24

    Nanoscale hydrides desorb and absorb hydrogen at faster rates and lower temperatures than bulk hydrides because of their high surface areas, abundant grain boundaries and short diffusion distances. No current methods exist for the direct fabrication of nanoscale complex hydrides (for example, alanates, borohydrides) with unique morphologies because of their extremely high reducibility, relatively low thermodynamic stability and complicated elemental composition. Here, we demonstrate a mechanical-force-driven physical vapour deposition procedure for preparing nanoscale complex hydrides without scaffolds or supports. Magnesium alanate nanorods measuring 20-40 nm in diameter and lithium borohydride nanobelts measuring 10-40 nm in width are successfully synthesised on the basis of the one-dimensional structure of the corresponding organic coordination polymers. The dehydrogenation kinetics of the magnesium alanate nanorods are improved, and the nanorod morphology persists through the dehydrogenation-hydrogenation process. Our findings may facilitate the fabrication of such hydrides with improved hydrogen storage properties for practical applications.

  8. Crystalline gamma-Al2O3 physical vapour deposition-coating for steel thixoforging tools.

    PubMed

    Bobzin, K; Hirt, G; Bagcivan, N; Khizhnyakova, L; Ewering, M

    2011-10-01

    The process of thixoforming, which has been part of many researches during the last decades, combines the advantages of forging and casting for the shaping of metallic components. But due to the high temperatures of semi-solid steel alloys high demands on the tools are requested. To resists the thermal and mechanical loads (wear, friction, thermal and thermomechanical fatigue) protecting thin films are necessary. In this regard crystalline gamma-Al2O3 deposited via Physical Vapour Deposition (PVD) is a promising candidate: It exhibits high thermal stability, high oxidation resistance and high hot hardness. In the present work the application of a (Ti, Al)N/gamma-Al2O3 coating deposited by means of Magnetron Sputter Ion Plating in an industrial coating unit is presented. The coating was analysed by means of Rockwell test, nanoindentation, and Scanning Electron Microscopy (SEM). The coated tool was tested in thixoforging experiments with steel grade X210CrW12 (AlSI D6). The surface of the coated dies was examined with Scanning Electron Microscope (SEM) after 22, 42, 90 and 170 forging cycles.

  9. Chemical vapor deposition growth

    NASA Technical Reports Server (NTRS)

    Ruth, R. P.; Manasevit, H. M.; Johnson, R. E.; Kenty, J. L.; Moudy, L. A.; Simpson, W. I.; Yang, J. J.

    1976-01-01

    A laboratory type CVD reactor system with a vertical deposition chamber and sample pedestal heated by an external RF coil has been extensively modified by installation of mass flow controllers, automatic process sequence timers, and special bellows-sealed air-operated valves for overall improved performance. Various film characterization procedures, including classical metallography, SEM analyses, X ray diffraction analyses, surface profilometry, and electrical measurements (resistivity, carrier concentration, mobility, spreading resistance profiles, and minority-carrier lifetime by the C-V-t method) area used to correlate Si sheet properties with CVD parameters and substrate properties. Evaluation procedures and measurements are given. Experimental solar cell structures were made both in epitaxial Si sheet (on sapphire substrates) and in polycrystalline material on alumina substrates, the former to provide an indication of what might be an upper limit on performance of the latter. Preliminary results are given, as obtained in cell structures not specially designed to allow for the unique properties of the sheet material, and fabricated in material known to be far from optimum for photovoltaic performance. Low power conversion efficiencies have been obtained in the epitaxial as well as the polycrystalline Si sheet.

  10. Atmospheric pressure chemical vapour deposition of vanadium oxides

    NASA Astrophysics Data System (ADS)

    Manning, Troy Darrell

    The APCVD of vanadium(IV) oxide thin films from halide precursors was investigated. It was found that the phase of vanadium oxide obtained could be controlled by the reactor temperature and precursor ratio. For vanadium(IV) chloride and water, reactor temperatures > 550 °C and an excess of water over VCI4 was required to produce VO2 thin films. For vanadium(V) oxytrichloride and water, reactor temperatures > 550 °C and an excess of water over VOCI3 also produced VO2 but required low total gas flow rates (< 1 L min 1) for complete coverage of the substrate. Vanadium(IV) oxide thin films doped with metal ions (W, Cr, Nb, Ti, Mo or Sn) were also prepared by the APCVD process in order to reduce the thermochromic transition temperature (TC) from 68 °C for the undoped material to < 30 °C. The most successful dopant was tungsten, introduced into the VOCl3, and water system as WCI6, which lowered T to 5 °C for a 3 atom% tungsten doped thin film. Tungsten (VI) ethoxide was introduced into the VCI4 and water system and reduced TC, of VO2, to 42 °C for a 1 atom% tungsten doped thin film. Chromium, introduced as CrCO2Cl2, formed a chromium vanadium oxide that did not display any thermochromic properties. Niobium, introduced as NbCl5 into the VOCl3 system, reduced TC of VO2, but the amount of niobium introduced could not be easily controlled. Molybdenum, introduced as MoCI5, also reduced TC of VO2, but the form of the molybdenum appeared to be different from that required for complete control of TC, Titanium, introduced as TiCl4, produced phase segregated films of VO2 and TiO2, with interesting multifunctional properties and a reduced TC. Tin, introduced as SnCl4, also formed a phase segregated material of VO2, and SnO2, with a slightly reduced TC.

  11. Simple Chemical Vapor Deposition Experiment

    ERIC Educational Resources Information Center

    Pedersen, Henrik

    2014-01-01

    Chemical vapor deposition (CVD) is a process commonly used for the synthesis of thin films for several important technological applications, for example, microelectronics, hard coatings, and smart windows. Unfortunately, the complexity and prohibitive cost of CVD equipment makes it seldom available for undergraduate chemistry students. Here, a…

  12. Simple Chemical Vapor Deposition Experiment

    ERIC Educational Resources Information Center

    Pedersen, Henrik

    2014-01-01

    Chemical vapor deposition (CVD) is a process commonly used for the synthesis of thin films for several important technological applications, for example, microelectronics, hard coatings, and smart windows. Unfortunately, the complexity and prohibitive cost of CVD equipment makes it seldom available for undergraduate chemistry students. Here, a…

  13. Ballistic transport in graphene grown by chemical vapor deposition

    SciTech Connect

    Calado, V. E.; Goswami, S.; Xu, Q.; Vandersypen, L. M. K.; Zhu, Shou-En; Janssen, G. C. A. M.; Watanabe, K.; Taniguchi, T.

    2014-01-13

    In this letter, we report the observation of ballistic transport on micron length scales in graphene synthesised by chemical vapour deposition (CVD). Transport measurements were done on Hall bar geometries in a liquid He cryostat. Using non-local measurements, we show that electrons can be ballistically directed by a magnetic field (transverse magnetic focussing) over length scales of ∼1 μm. Comparison with atomic force microscope measurements suggests a correlation between the absence of wrinkles and the presence of ballistic transport in CVD graphene.

  14. Chemical vapor deposition of sialon

    DOEpatents

    Landingham, R.L.; Casey, A.W.

    A laminated composite and a method for forming the composite by chemical vapor deposition are described. The composite includes a layer of sialon and a material to which the layer is bonded. The method includes the steps of exposing a surface of the material to an ammonia containing atmosphere; heating the surface to at least about 1200/sup 0/C; and impinging a gas containing N/sub 2/, SiCl/sub 4/, and AlCl/sub 3/ on the surface.

  15. Chemical vapor deposition of sialon

    DOEpatents

    Landingham, Richard L.; Casey, Alton W.

    1982-01-01

    A laminated composite and a method for forming the composite by chemical vapor deposition. The composite includes a layer of sialon and a material to which the layer is bonded. The method includes the steps of exposing a surface of the material to an ammonia containing atmosphere; heating the surface to at least about 1200.degree. C.; and impinging a gas containing in a flowing atmosphere of air N.sub.2, SiCl.sub.4, and AlCl.sub.3 on the surface.

  16. Well-controlled metal co-catalysts synthesised by chemical vapour impregnation for photocatalytic hydrogen production and water purification.

    PubMed

    Su, Ren; Forde, Michael M; He, Qian; Shen, Yanbin; Wang, Xueqin; Dimitratos, Nikolaos; Wendt, Stefan; Huang, Yudong; Iversen, Bo B; Kiely, Christopher J; Besenbacher, Flemming; Hutchings, Graham J

    2014-10-28

    As co-catalyst materials, metal nanoparticles (NPs) play crucial roles in heterogeneous photocatalysis. The photocatalytic performance strongly relies on the physical properties (i.e., composition, microstructure, and surface impurities) of the metal NPs. Here we report a convenient chemical vapour impregnation (CVI) approach for the deposition of monometallic-, alloyed, and core-shell structured metal co-catalysts onto the TiO2 photocatalyst. The as-synthesised metal NPs are highly dispersed on the support and show narrow size distributions, which suit photocatalysis applications. More importantly, the surfaces of the as-synthesised metal NPs are free of protecting ligands, enabling the photocatalysts to be ready to use without further treatment. The effect of the metal identity, the alloy chemical composition, and the microstructure on the photocatalytic performance has been investigated for hydrogen production and phenol decomposition. Whilst the photocatalytic H2 production performance can be greatly enhanced by using the core-shell structured co-catalyst (Pdshell-Aucore and Ptshell-Aucore), the Ptshell-Aucore modified TiO2 yields enhanced quantum efficiency but a reduced effective decomposition of phenol to CO2 compared to that of the monometallic counterparts. We consider the CVI approach provides a feasible and elegant process for the decoration of photocatalyst materials.

  17. PdZn catalysts for CO2 hydrogenation to methanol using chemical vapour impregnation (CVI).

    PubMed

    Bahruji, H; Bowker, M; Jones, W; Hayward, J; Ruiz Esquius, J; Morgan, D J; Hutchings, G J

    2017-02-09

    The formation of PdZn bimetallic alloys on ZnO, TiO2 and Al2O3 supports was investigated, together with the effect of alloy formation on the CO2 hydrogenation reaction. The chemical vapour impregnation (CVI) method produced PdZn nanoparticles with diameters of 3-6 nm. X-ray photoelectron spectroscopy and X-ray diffraction revealed the changes in the structure of the PdZn alloy that help stabilise formate intermediates during methanol synthesis. PdZn supported on TiO2 exhibits high methanol productivity of 1730 mmol kgcat(-1) h(-1) that is associated with the high dispersion of the supported PdZn alloy.

  18. Chemical vapor deposition of epitaxial silicon

    DOEpatents

    Berkman, Samuel

    1984-01-01

    A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

  19. The reaction-field effect on the chemical potentials of polar aprotic non-aromatic liquids 1. Vapour pressure

    NASA Astrophysics Data System (ADS)

    Rosseinsky, D. R.; Stead, K.; Mowforth, C. W.

    1998-10-01

    The reaction field for the interaction of a molecule with its identical neighbours is shown to be a major determinant of the chemical potential of many dipolar liquids. The electrostatic potential w, derived for immersion of the dipolar molecule in its own kind, and notably comprising solely static and hf permittivities, is equated with the difference between the polar-liquid chemical potential and that of an isostructural non-polar hydrocarbon. For all the 26 non-aromatic Onsager liquids for which the requisite data are available, acceptable conformity is established of the vapour pressure calculated from w with that observed, fluorocarbons excepted. If w turns out to be small, vapour pressures of (these 12) dipolars approximate quite closely to those of the isostructural non-polars, as expected. For ketones and nitroalkanes varied-temperature data are available and well reproduced via w: thus calculated vaporization enthalpies equal the observed.

  20. Laser Induced Chemical Liquid Phase Deposition (LCLD)

    SciTech Connect

    Nanai, Laszlo; Balint, Agneta M.

    2012-08-17

    Laser induced chemical deposition (LCLD) of metals onto different substrates attracts growing attention during the last decade. Deposition of metals onto the surface of dielectrics and semiconductors with help of laser beam allows the creation of conducting metal of very complex architecture even in 3D. In the processes examined the deposition occurs from solutions containing metal ions and reducing agents. The deposition happens in the region of surface irradiated by laser beam (micro reactors). Physics -chemical reactions driven by laser beam will be discussed for different metal-substrate systems. The electrical, optical, mechanical properties of created interfaces will be demonstrated also including some practical-industrial applications.

  1. Chemical enhancement of surface deposition

    DOEpatents

    Patch, K.D.; Morgan, D.T.

    1997-07-29

    A method and apparatus are disclosed for increasing the deposition of ions onto a surface, such as the adsorption of uranium ions on the detecting surface of a radionuclide detector. The method includes the step of exposing the surface to a complexing agent, such as a phosphate ion solution, which has an affinity for the dissolved species to be deposited on the surface. This provides, for example, enhanced sensitivity of the radionuclide detector. 16 figs.

  2. Chemical enhancement of surface deposition

    DOEpatents

    Patch, Keith D.; Morgan, Dean T.

    1997-07-29

    A method and apparatus for increasing the deposition of ions onto a surface, such as the adsorption of uranium ions on the detecting surface of a radionuclide detector. The method includes the step of exposing the surface to a complexing agent, such as a phosphate ion solution, which has an affinity for the dissolved species to be deposited on the surface. This provides, for example, enhanced sensitivity of the radionuclide detector.

  3. Spectroscopic investigation of different concentrations of the vapour deposited copper phthalocyanine as a "guest" in polyimide matrix.

    PubMed

    Georgiev, Anton; Yordanov, Dancho; Dimov, Dean; Assa, Jacob; Spassova, Erinche; Danev, Gencho

    2015-04-05

    Nanocomposite layers 250 nm copper phthalocyanine/polyimide prepared by simultaneous vapour deposition of three different sources were studied. Different concentrations of copper phthalocyanine as a "guest" in polyimide matrix as a function of conditions of the preparation have been determined by FTIR (Fourier Transform Infrared) and UV-VIS (Ultraviolet-Visible) spectroscopies. The aim was to estimate the possibility of the spectroscopic methods for quantitative determination of the "guest" and compare with the quality of the polyimide thin films in relation to the "guest" concentration. The band at 1334 cm(-1) has been used for quantitative estimation of "guest" in polyimide matrix. The concentrations of the copper phthalocyanine less than 20% require curve fitting techniques with Fourier self deconvolution. The relationship between "guest" concentrations and degree of imidization, as well as the electronic UV-VIS spectra are discussed in relation to the composition, imidization degree and the two crystallographic modification of the embedded chromophore.

  4. Spectroscopic investigation of different concentrations of the vapour deposited copper phthalocyanine as a "guest" in polyimide matrix

    NASA Astrophysics Data System (ADS)

    Georgiev, Anton; Yordanov, Dancho; Dimov, Dean; Assa, Jacob; Spassova, Erinche; Danev, Gencho

    2015-04-01

    Nanocomposite layers 250 nm copper phthalocyanine/polyimide prepared by simultaneous vapour deposition of three different sources were studied. Different concentrations of copper phthalocyanine as a "guest" in polyimide matrix as a function of conditions of the preparation have been determined by FTIR (Fourier Transform Infrared) and UV-VIS (Ultraviolet-Visible) spectroscopies. The aim was to estimate the possibility of the spectroscopic methods for quantitative determination of the "guest" and compare with the quality of the polyimide thin films in relation to the "guest" concentration. The band at 1334 cm-1 has been used for quantitative estimation of "guest" in polyimide matrix. The concentrations of the copper phthalocyanine less than 20% require curve fitting techniques with Fourier self deconvolution. The relationship between "guest" concentrations and degree of imidization, as well as the electronic UV-VIS spectra are discussed in relation to the composition, imidization degree and the two crystallographic modification of the embedded chromophore.

  5. Chemical vapor deposition of mullite coatings

    DOEpatents

    Sarin, Vinod; Mulpuri, Rao

    1998-01-01

    This invention is directed to the creation of crystalline mullite coatings having uniform microstructure by chemical vapor deposition (CVD). The process comprises the steps of establishing a flow of reactants which will yield mullite in a CVD reactor, and depositing a crystalline coating from the reactant flow. The process will yield crystalline coatings which are dense and of uniform thickness.

  6. Numerical modeling tools for chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Jasinski, Thomas J.; Childs, Edward P.

    1992-01-01

    Development of general numerical simulation tools for chemical vapor deposition (CVD) was the objective of this study. Physical models of important CVD phenomena were developed and implemented into the commercial computational fluid dynamics software FLUENT. The resulting software can address general geometries as well as the most important phenomena occurring with CVD reactors: fluid flow patterns, temperature and chemical species distribution, gas phase and surface deposition. The physical models are documented which are available and examples are provided of CVD simulation capabilities.

  7. Chemical-vapor-deposition reactor

    NASA Technical Reports Server (NTRS)

    Chern, S.

    1979-01-01

    Reactor utilizes multiple stacked trays compactly arranged in paths of horizontally channeled reactant gas streams. Design allows faster and more efficient deposits of film on substrates, and reduces gas and energy consumption. Lack of dead spots that trap reactive gases reduces reactor purge time.

  8. Quantum chemical and solution phase evaluation of metallocenes as reducing agents for the prospective atomic layer deposition of copper.

    PubMed

    Dey, Gangotri; Wrench, Jacqueline S; Hagen, Dirk J; Keeney, Lynette; Elliott, Simon D

    2015-06-14

    We propose and evaluate the use of metallocene compounds as reducing agents for the chemical vapour deposition (and specifically atomic layer deposition, ALD) of the transition metal Cu from metalorganic precursors. Ten different transition metal cyclopentadienyl compounds are screened for their utility in the reduction of Cu from five different Cu precursors by evaluating model reaction energies with density functional theory (DFT) and solution phase chemistry.

  9. Towards engineered branch placement: Unreal™ match between vapour-liquid-solid glancing angle deposition nanowire growth and simulation

    SciTech Connect

    Taschuk, M. T.; Tucker, R. T.; LaForge, J. M.; Beaudry, A. L.; Kupsta, M. R.; Brett, M. J.

    2013-12-28

    The vapour-liquid-solid glancing angle deposition (VLS-GLAD) process is capable of producing complex nanotree structures with control over azimuthal branch orientation and height. We have developed a thin film growth simulation including ballistic deposition, simplified surface diffusion, and droplet-mediated cubic crystal growth for the VLS-GLAD process using the Unreal{sup TM} Development Kit. The use of a commercial game engine has provided an interactive environment while allowing a custom physics implementation. Our simulation's output is verified against experimental data, including a volumetric film reconstruction produced using focused ion beam and scanning-electron microscopy (SEM), crystallographic texture, and morphological characteristics such as branch orientation. We achieve excellent morphological and texture agreement with experimental data, as well as qualitative agreement with SEM imagery. The simplified physics in our model reproduces the experimental films, indicating that the dominant role flux geometry plays in the VLS-GLAD competitive growth process responsible for azimuthally oriented branches and biaxial crystal texture evolution. The simulation's successful reproduction of experimental data indicates that it should have predictive power in designing novel VLS-GLAD structures.

  10. Chemical-Vapor-Deposited Diamond Film

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa

    1999-01-01

    This chapter describes the nature of clean and contaminated diamond surfaces, Chemical-vapor-deposited (CVD) diamond film deposition technology, analytical techniques and the results of research on CVD diamond films, and the general properties of CVD diamond films. Further, it describes the friction and wear properties of CVD diamond films in the atmosphere, in a controlled nitrogen environment, and in an ultra-high-vacuum environment.

  11. Laser Velocimetry of Chemical Vapor Deposition Flows

    NASA Technical Reports Server (NTRS)

    1993-01-01

    Laser velocimetry (LV) is being used to measure the gas flows in chemical vapor deposition (CVD) reactors. These gas flow measurements can be used to improve industrial processes in semiconductor and optical layer deposition and to validate numerical models. Visible in the center of the picture is the graphite susceptor glowing orange-hot at 600 degrees C. It is inductively heated via the copper cool surrounding the glass reactor.

  12. A difference in using atomic layer deposition or physical vapour deposition TiN as electrode material in metal-insulator-metal and metal-insulator-silicon capacitors.

    PubMed

    Groenland, A W; Wolters, R A M; Kovalgin, A Y; Schmitz, J

    2011-09-01

    In this work, metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) capacitors are studied using titanium nitride (TiN) as the electrode material. The effect of structural defects on the electrical properties on MIS and MIM capacitors is studied for various electrode configurations. In the MIM capacitors the bottom electrode is a patterned 100 nm TiN layer (called BE type 1), deposited via sputtering, while MIS capacitors have a flat bottom electrode (called BE type 2-silicon substrate). A high quality 50-100 nm thick SiO2 layer, made by inductively-coupled plasma CVD at 150 degrees C, is deposited as a dielectric on top of both types of bottom electrodes. BE type 1 (MIM) capacitors have a varying from low to high concentration of structural defects in the SiO2 layer. BE type 2 (MIS) capacitors have a low concentration of structural defects and are used as a reference. Two sets of each capacitor design are fabricated with the TiN top electrode deposited either via physical vapour deposition (PVD, i.e., sputtering) or atomic layer deposition (ALD). The MIM and MIS capacitors are electrically characterized in terms of the leakage current at an electric field of 0.1 MV/cm (I leak) and for different structural defect concentrations. It is shown that the structural defects only show up in the electrical characteristics of BE type 1 capacitors with an ALD TiN-based top electrode. This is due to the excellent step coverage of the ALD process. This work clearly demonstrates the sensitivity to process-induced structural defects, when ALD is used as a step in process integration of conductors on insulation materials.

  13. Chemical effect on ozone deposition over seawater

    EPA Science Inventory

    Surface layer resistance plays an important role in determining ozone deposition velocity over seawater. Recent studies suggest that surface layer resistance over sea-water is influenced by wind-speed and chemical interaction at the air-water interface. Here, we investigate the e...

  14. Chemical effect on ozone deposition over seawater

    EPA Science Inventory

    Surface layer resistance plays an important role in determining ozone deposition velocity over seawater. Recent studies suggest that surface layer resistance over sea-water is influenced by wind-speed and chemical interaction at the air-water interface. Here, we investigate the e...

  15. Automated semiconductor vacuum chemical vapor deposition facility

    NASA Technical Reports Server (NTRS)

    1982-01-01

    A semiconductor vacuum chemical vapor deposition facility (totally automatic) was developed. Wafers arrived on an air track, automatically loaded into a furnace tube, processed, returned to the track, and sent on to the next operation. The entire process was controlled by a computer.

  16. CHEMICAL VAPOR DEPOSITED MATERIALS FOR ELECTRON TUBES.

    DTIC Science & Technology

    The combined techniques of chemical vapor deposition and photocopying offer the promise of new and useful slow -wave structures for microwave tubes...These slow -wave structures include conventional periodic structures such as the helix, meander line and interdigital line. In addition, structures

  17. Low-pressure, chemical vapor deposition polysilicon

    NASA Technical Reports Server (NTRS)

    Gallagher, B. D.; Crotty, G. C.

    1986-01-01

    The low-pressure chemical vapor deposition (LPCVD) of polycrystalline silicon was investigted. The physical system was described, as was the controlling process parameters and requirements for producing films for use as an integral portion of the solar cell contact system.

  18. Chemical vapor deposition coating for micromachines

    SciTech Connect

    MANI,SEETHAMBAL S.; FLEMING,JAMES G.; SNIEGOWSKI,JEFFRY J.; DE BOER,MAARTEN P.; IRWIN,LAWRENCE W.; WALRAVEN,JEREMY A.; TANNER,DANELLE M.; DUGGER,MICHAEL T.

    2000-04-21

    Two major problems associated with Si-based MEMS devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structures to solve these problems. In this paper, the authors will present a process used to selectively coat MEMS devices with tungsten using a CVD (Chemical Vapor Deposition) process. The selective W deposition process results in a very conformal coating and can potentially solve both stiction and wear problems confronting MEMS processing. The selective deposition of tungsten is accomplished through silicon reduction of WF{sub 6}, which results in a self-limiting reaction. The selective deposition of W only on polysilicon surfaces prevents electrical shorts. Further, the self-limiting nature of this selective W deposition process ensures the consistency necessary for process control. Selective tungsten is deposited after the removal of the sacrificial oxides to minimize process integration problems. This tungsten coating adheres well and is hard and conducting, requirements for device performance. Furthermore, since the deposited tungsten infiltrates under adhered silicon parts and the volume of W deposited is less than the amount of Si consumed, it appears to be possible to release stuck parts that are contacted over small areas such as dimples. Results from tungsten deposition on MEMS structures with dimples will be presented. The effect of wet and vapor phase cleanings prior to the deposition will be discussed along with other process details. The W coating improved wear by orders of magnitude compared to uncoated parts. Tungsten CVD is used in the integrated-circuit industry, which makes this approach manufacturable.

  19. Deposition of H15NO3 vapour to white oak, red maple and loblolly pine foliage: experimental observations and a generalized model

    SciTech Connect

    Hanson, Paul J; Garten Jr, Charles T

    1992-10-01

    Nitric acid vapour enriched with {sup 15}N (H{sup 15}NO{sub 3}) was volatilized into the cuvette of an open-flow gas exchange system containing red maple (Acer rubrum L.), white oak (Quercus alba L.), or loblolly pine (Pinus taeda L.) seedling shoots to facilitate direct measurements of total foliar deposition, and subsequent assessments of the rate of HNO{sub 3} movement across the cuticle (transcuticular uptake). Total H{sup 15}NO{sub 3} vapour deposition to foliar surfaces ranged from <5 to 27 nmol m{sup -2} s{sup -1} the variability being largely accounted for by differences in HNO{sub 3} concentrations and leaf conductance. Mean whole-leaf conductance to HNO{sub 3} ranged between 0.9 and 3.4 mm s{sup -1} for hardwoods and between 6 and 34 mm s{sup -1} for loblolly pine. Of the total H{sup 15}NO{sub 3} vapour deposited to leaves, an average of 39 to 48% was immediately 'bound' into hardwood foliage whereas only 3% was bound to loblolly pine needles. This implies that rain events might extract greater amounts of HNO{sub 3}-derived nitrate in throughfall from conifer canopies as compared to hardwood canopies. Post-exposure H{sup 15}NO{sub 3} uptake rates across the leaf cuticle increased with surface nitrate concentrations, but were 1 to 2 orders of magnitude lower (O06 to 0.24 nmol m{sup -2} s{sup -1}) than total HNO{sub 3}, deposition during exposures. A generalized leaf-level model of HNO{sub 3} deposition to foliage capable of simulating deposition pathways to sorption sites on the leaf surface, and to the metabolically active leaf interior via transcuticular or stomatal pathways is formulated and suggested for use in planning future work on HNO{sub 3} deposition.

  20. Hair analysis as a useful procedure for detection of vapour exposure to chemical warfare agents: simulation of sulphur mustard with methyl salicylate.

    PubMed

    Spiandore, Marie; Piram, Anne; Lacoste, Alexandre; Josse, Denis; Doumenq, Pierre

    2014-06-01

    Chemical warfare agents (CWA) are highly toxic compounds which have been produced to kill or hurt people during conflicts or terrorist attacks. Despite the fact that their use is strictly prohibited according to international convention, populations' exposure still recently occurred. Development of markers of exposure to CWA is necessary to distinguish exposed victims from unexposed ones. We present the first study of hair usage as passive sampler to assess contamination by chemicals in vapour form. This work presents more particularly the hair adsorption capacity for methyl salicylate used as a surrogate of the vesicant sulphur mustard. Chemical vapours toxicity through the respiratory route has historically been defined through Haber's law's concentration-time (Ct) product, and vapour exposure of hair to methyl salicylate was conducted with various times or doses of exposure in the range of incapacitating and lethal Ct products corresponding to sulphur mustard. Following exposure, extraction of methyl salicylate from hair was conducted by simple soaking in dichloromethane. Methyl salicylate could be detected on hair for vapour concentration corresponding to about one fifth of the sulphur mustard concentration that would kill 50% of exposed individuals (LCt50). The amount of methyl salicylate recovered from hair increased with time or dose of exposure. It showed a good correlation with the concentration-time product, suggesting that hair could be used like a passive sampler to assess vapour exposure to chemical compounds. It introduces great perspectives concerning the use of hair as a marker of exposure to CWA.

  1. Metal film deposition by laser breakdown chemical vapor deposition

    SciTech Connect

    Jervis, T.R.

    1985-01-01

    Dielectric breakdown of gas mixtures can be used to deposit homogeneous thin films by chemical vapor deposition with appropriate control of flow and pressure conditions to suppress gas phase nucleation and particle formation. Using a pulsed CO/sub 2/ laser operating at 10.6 microns where there is no significant resonant absorption in any of the source gases, we have succeeded in depositing homogeneous films from several gas phase precursors by gas phase laser pyrolysis. Nickel and molybdenum from the respective carbonyls and tungsten from the hexafluoride have been examined to date. In each case the gas precursor is buffered to reduce the partial pressure of the reactants and to induce breakdown. The films are spectrally reflective and uniform over a large area. Films have been characterized by Auger electron spectroscopy, x-ray diffraction, pull tests, and resistivity measurements. The highest quality films have resulted from the nickel depositions. Detailed x-ray diffraction analysis of these films yields a very small domain size (approx. 50 A) consistent with rapid quenching from the gas phase reaction zone. This analysis also shows nickel carbide formation consistent with the temperature of the reaction zone and the Auger electron spectroscopy results which show some carbon and oxygen incorporation (8% and 1% respectively). Gas phase transport and condensation of the molybdenum carbonyl results in substantial carbon and oxygen contamination of the molybdenum films requiring heated substrates, a requirement not consistent with the goals of the program to maximize the quench rate of the deposition. Results from tungsten deposition experiments representing a reduction chemistry instead of the decomposition chemistry involved in the carbonyl experiments are also reported.

  2. Metal film deposition by laser breakdown chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Jervis, T. R.

    1985-01-01

    Dielectric breakdown of gas mixtures can be used to deposit homogeneous thin films by chemical vapor deposition with appropriate control of flow and pressure conditions to suppress gas phase nucleation and particle formation. Using a pulsed CO2 laser operating at 10.6 microns where there is no significant resonant absorption in any of the source gases, we have succeeded in depositing homogeneous films from several gas phase precursors by gas phase laser pyrolysis. Nickel and molybdenum from the respective carbonyls and tungsten from the hexafluoride have been examined to date. In each case the gas precursor is buffered to reduce the partial pressure of the reactants and to induce breakdown. The films are spectrally reflective and uniform over a large area. Films have been characterized by Auger electron spectroscopy, X-ray diffraction, pull tests, and resistivity measurements. The highest quality films have resulted from the nickel depositions. Detailed X-ray diffraction analysis of these films yields a very small domain size (approx. 50 A) consistent with rapid quenching from the gas phase reaction zone. This analysis also shows nickel carbide formation consistent with the temperature of the reaction zone and the Auger electron spectroscopy results which show some carbon and oxygen incorporation (8% and 1% respectively). Gas phase transport and condensation of the molybdenum carbonyl results in substantial carbon and oxygen contamination of the molybdenum films requiring heated substrates, a requirement not consistent with the goals of the program to maximize the quench rate of the deposition. Results from tungsten deposition experiments representing a reduction chemistry instead of the decomposition chemistry involved in the carbonyl experiments are also reported.

  3. Metal film deposition by laser breakdown chemical vapor deposition

    SciTech Connect

    Jervis, T. R.; Newkirk, L. R.

    1986-06-01

    Dielectric breakdown of gas mixtures can be used to deposit thin films by chemical vapor deposition with appropriate control of flow and pressure conditions to suppress gas-phase nucleation and particle formation. Using a pulsed CO/sub 2/ laser operating at 10.6 ..mu.. where there is no significant resonant absorption in any of the source gases, homogeneous films from several gas-phase precursors have been sucessfully deposited by gas-phase laser pyrolysis. Nickel and molybdenum from the respective carbonyls representing decomposition chemistry and tungsten from the hexafluoride representing reduction chemistry have been demonstrated. In each case the gas precursor is buffered with argon to reduce the partial pressure of the reactants and to induce breakdown. Films have been characterized by Auger electron spectroscopy, x-ray diffraction, transmission electron microscopy, pull tests, and resistivity measurements. The highest quality films have resulted from the nickel depositions. Detailed x-ray diffraction analysis of these films yields a very small domain size consistent with the low temperature of the substrate and the formation of metastable nickel carbide. Transmission electron microscopy supports this analysis.

  4. Chemical vapor deposition of group IIIB metals

    DOEpatents

    Erbil, Ahmet

    1989-01-01

    Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula (I) ##STR1## where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula I is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula I and a heat decomposable tellurium compound under nonoxidizing conditions.

  5. Chemical vapor deposition of group IIIB metals

    DOEpatents

    Erbil, A.

    1989-11-21

    Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula given in the patent where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula 1 is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula 1 and a heat decomposable tellurium compound under nonoxidizing conditions.

  6. Templated Chemically Deposited Semiconductor Optical Fiber Materials

    NASA Astrophysics Data System (ADS)

    Sparks, Justin R.; Sazio, Pier J. A.; Gopalan, Venkatraman; Badding, John V.

    2013-07-01

    Chemical deposition is a powerful technology for fabrication of planar microelectronics. Optical fibers are the dominant platform for telecommunications, and devices such as fiber lasers are forming the basis for new industries. High-pressure chemical vapor deposition (HPCVD) allows for conformal layers and void-free wires of precisely doped crystalline unary and compound semiconductors inside the micro-to-nanoscale-diameter pores of microstructured optical fibers (MOFs). Drawing the fibers to serve as templates into which these semiconductor structures can be fabricated allows for geometric design flexibility that is difficult to achieve with planar fabrication. Seamless coupling of semiconductor optoelectronic and photonic devices with existing fiber infrastructure thus becomes possible, facilitating all-fiber technological approaches. The deposition techniques also allow for a wider range of semiconductor materials compositions to be exploited than is possible by means of preform drawing. Gigahertz bandwidth junction-based fiber devices can be fabricated from doped crystalline semiconductors, for example. Deposition of amorphous hydrogenated silicon, which cannot be drawn, allows for the exploitation of strong nonlinear optical function in fibers. Finally, crystalline compound semiconductor fiber cores hold promise for high-power infrared light-guiding fiber devices and subwavelength-resolution, large-area infrared imaging.

  7. Advanced deposition model for thermal activated chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Cai, Dang

    Thermal Activated Chemical Vapor Deposition (TACVD) is defined as the formation of a stable solid product on a heated substrate surface from chemical reactions and/or dissociation of gaseous reactants in an activated environment. It has become an essential process for producing solid film, bulk material, coating, fibers, powders and monolithic components. Global market of CVD products has reached multi billions dollars for each year. In the recent years CVD process has been extensively used to manufacture semiconductors and other electronic components such as polysilicon, AlN and GaN. Extensive research effort has been directed to improve deposition quality and throughput. To obtain fast and high quality deposition, operational conditions such as temperature, pressure, fluid velocity and species concentration and geometry conditions such as source-substrate distance need to be well controlled in a CVD system. This thesis will focus on design of CVD processes through understanding the transport and reaction phenomena in the growth reactor. Since the in situ monitor is almost impossible for CVD reactor, many industrial resources have been expended to determine the optimum design by semi-empirical methods and trial-and-error procedures. This approach has allowed the achievement of improvements in the deposition sequence, but begins to show its limitations, as this method cannot always fulfill the more and more stringent specifications of the industry. To resolve this problem, numerical simulation is widely used in studying the growth techniques. The difficulty of numerical simulation of TACVD crystal growth process lies in the simulation of gas phase and surface reactions, especially the latter one, due to the fact that very limited kinetic information is available in the open literature. In this thesis, an advanced deposition model was developed to study the multi-component fluid flow, homogeneous gas phase reactions inside the reactor chamber, heterogeneous surface

  8. Chemical deposition methods using supercritical fluid solutions

    DOEpatents

    Sievers, Robert E.; Hansen, Brian N.

    1990-01-01

    A method for depositing a film of a desired material on a substrate comprises dissolving at least one reagent in a supercritical fluid comprising at least one solvent. Either the reagent is capable of reacting with or is a precursor of a compound capable of reacting with the solvent to form the desired product, or at least one additional reagent is included in the supercritical solution and is capable of reacting with or is a precursor of a compound capable of reacting with the first reagent or with a compound derived from the first reagent to form the desired material. The supercritical solution is expanded to produce a vapor or aerosol and a chemical reaction is induced in the vapor or aerosol so that a film of the desired material resulting from the chemical reaction is deposited on the substrate surface. In an alternate embodiment, the supercritical solution containing at least one reagent is expanded to produce a vapor or aerosol which is then mixed with a gas containing at least one additional reagent. A chemical reaction is induced in the resulting mixture so that a film of the desired material is deposited.

  9. Liquid and vapour-phase antifungal activities of selected essential oils against candida albicans: microscopic observations and chemical characterization of cymbopogon citratus

    PubMed Central

    2010-01-01

    Background Use of essential oils for controlling Candida albicans growth has gained significance due to the resistance acquired by pathogens towards a number of widely-used drugs. The aim of this study was to test the antifungal activity of selected essential oils against Candida albicans in liquid and vapour phase and to determine the chemical composition and mechanism of action of most potent essential oil. Methods Minimum Inhibitory concentration (MIC) of different essential oils in liquid phase, assayed through agar plate dilution, broth dilution & 96-well micro plate dilution method and vapour phase activity evaluated through disc volatilization method. Reduction of C. albicans cells with vapour exposure was estimated by kill time assay. Morphological alteration in treated/untreated C. albicans cells was observed by the Scanning electron microscopy (SEM)/Atomic force microscopy (AFM) and chemical analysis of the strongest antifungal agent/essential oil has been done by GC, GC-MS. Results Lemon grass (Cymbopogon citratus) essential oil exhibited the strongest antifungal effect followed by mentha (Mentha piperita) and eucalyptus (Eucalyptus globulus) essential oil. The MIC of lemon grass essential oil in liquid phase (288 mg/l) was significantly higher than that in the vapour phase (32.7 mg/l) and a 4 h exposure was sufficient to cause 100% loss in viability of C. albicans cells. SEM/AFM of C. albicans cells treated with lemon grass essential oil at MIC level in liquid and vapour phase showed prominent shrinkage and partial degradation, respectively, confirming higher efficacy of vapour phase. GC-MS analysis revealed that lemon grass essential oil was dominated by oxygenated monoterpenes (78.2%); α-citral or geranial (36.2%) and β-citral or neral (26.5%), monoterpene hydrocarbons (7.9%) and sesquiterpene hydrocarbons (3.8%). Conclusion Lemon grass essential oil is highly effective in vapour phase against C. albicans, leading to deleterious morphological

  10. Liquid and vapour-phase antifungal activities of selected essential oils against Candida albicans: microscopic observations and chemical characterization of Cymbopogon citratus.

    PubMed

    Tyagi, Amit K; Malik, Anushree

    2010-11-10

    Use of essential oils for controlling Candida albicans growth has gained significance due to the resistance acquired by pathogens towards a number of widely-used drugs. The aim of this study was to test the antifungal activity of selected essential oils against Candida albicans in liquid and vapour phase and to determine the chemical composition and mechanism of action of most potent essential oil. Minimum Inhibitory concentration (MIC) of different essential oils in liquid phase, assayed through agar plate dilution, broth dilution & 96-well micro plate dilution method and vapour phase activity evaluated through disc volatilization method. Reduction of C. albicans cells with vapour exposure was estimated by kill time assay. Morphological alteration in treated/untreated C. albicans cells was observed by the Scanning electron microscopy (SEM)/Atomic force microscopy (AFM) and chemical analysis of the strongest antifungal agent/essential oil has been done by GC, GC-MS. Lemon grass (Cymbopogon citratus) essential oil exhibited the strongest antifungal effect followed by mentha (Mentha piperita) and eucalyptus (Eucalyptus globulus) essential oil. The MIC of lemon grass essential oil in liquid phase (288 mg/l) was significantly higher than that in the vapour phase (32.7 mg/l) and a 4 h exposure was sufficient to cause 100% loss in viability of C. albicans cells. SEM/AFM of C. albicans cells treated with lemon grass essential oil at MIC level in liquid and vapour phase showed prominent shrinkage and partial degradation, respectively, confirming higher efficacy of vapour phase. GC-MS analysis revealed that lemon grass essential oil was dominated by oxygenated monoterpenes (78.2%); α-citral or geranial (36.2%) and β-citral or neral (26.5%), monoterpene hydrocarbons (7.9%) and sesquiterpene hydrocarbons (3.8%). Lemon grass essential oil is highly effective in vapour phase against C. albicans, leading to deleterious morphological changes in cellular structures and cell

  11. Origin and chemical composition of evaporite deposits

    USGS Publications Warehouse

    Moore, George William

    1960-01-01

    A comparative study of marine evaporite deposits forming at the present time along the pacific coast of central Mexico and evaporite formations of Permian age in West Texas Basin was made in order to determine if the modern sediments provide a basis for understanding environmental conditions that existed during deposition of the older deposits. The field work was supplemented by investigations of artificial evaporite minerals precipitated in the laboratory and by study of the chemical composition of halite rock of different geologic ages. The environment of deposition of contemporaneous marine salt deposits in Mexico is acidic, is strongly reducing a few centimeters below the surface, and teems with microscopic life. Deposition of salt, unlike that of many other sediments, is not wholly a constructional phenomenon. Permanent deposits result only if a favorable balance exists between deposition in the dry season and dissolution in the wet season. Evaporite formations chosen for special study in the West Texas Basin are, in ascending order, the Castile, Salado, and Rustler formations, which have a combined thickness of 1200 meters. The Castile formation is largely composed of gypsum rock, the Salado, halite rock, and the Rustler, quartz and carbonate sandstone. The lower part of the Castile formation is bituminous and contains limestone laminae. The Castile and Rustler formations thicken to the south at the expense of salt of the intervening Salado formation. The clastic rocks of the Rustler formation are interpreted as the deposits of a series of barrier islands north of which halite rock of the Salado was deposited. The salt is believed to have formed in shallow water of uniform density that was mixed by the wind. Where water depth exceeded the depth of the wind mixing, density stratification developed, and gypsum was deposited. Dense water of high salinity below the density discontinuity was overlain by less dense, more normally saline water which was derived from

  12. Construction of conductive multilayer films of biogenic triangular gold nanoparticles and their application in chemical vapour sensing

    NASA Astrophysics Data System (ADS)

    Singh, Amit; Chaudhari, Minakshi; Sastry, Murali

    2006-05-01

    Metal nanoparticles are interesting building blocks for realizing films for a number of applications that include bio- and chemical sensing. To date, spherical metal nanoparticles have been used to generate functional electrical coatings. In this paper we demonstrate the synthesis of electrically conductive coatings using biologically prepared gold nanotriangles as the building blocks. The gold nanotriangles are prepared by the reduction of aqueous chloroaurate ions using an extract of the lemongrass plant (Cymbopogon flexuosus) which are thereafter assembled onto a variety of substrates by simple solution casting. The conductivity of the film shows a drastic fall upon mild heat treatment, leading to the formation of electrically conductive thin films of nanoparticles. We have also investigated the possibility of using the gold nanotriangle films in vapour sensing. A large fall in film resistance is observed upon exposure to polar molecules such as methanol, while little change occurs upon exposure to weakly polar molecules such as chloroform.

  13. Radiative transfer modeling of surface chemical deposits

    NASA Astrophysics Data System (ADS)

    Reichardt, Thomas A.; Kulp, Thomas J.

    2016-05-01

    Remote detection of a surface-bound chemical relies on the recognition of a pattern, or "signature," that is distinct from the background. Such signatures are a function of a chemical's fundamental optical properties, but also depend upon its specific morphology. Importantly, the same chemical can exhibit vastly different signatures depending on the size of particles composing the deposit. We present a parameterized model to account for such morphological effects on surface-deposited chemical signatures. This model leverages computational tools developed within the planetary and atmospheric science communities, beginning with T-matrix and ray-tracing approaches for evaluating the scattering and extinction properties of individual particles based on their size and shape, and the complex refractive index of the material itself. These individual-particle properties then serve as input to the Ambartsumian invariant imbedding solution for the reflectance of a particulate surface composed of these particles. The inputs to the model include parameters associated with a functionalized form of the particle size distribution (PSD) as well as parameters associated with the particle packing density and surface roughness. The model is numerically inverted via Sandia's Dakota package, optimizing agreement between modeled and measured reflectance spectra, which we demonstrate on data acquired on five size-selected silica powders over the 4-16 μm wavelength range. Agreements between modeled and measured reflectance spectra are assessed, while the optimized PSDs resulting from the spectral fitting are then compared to PSD data acquired from independent particle size measurements.

  14. Physical-chemical conditions of ore deposition

    USGS Publications Warehouse

    Barton, P.B.

    1981-01-01

    Ore deposits form under a wide range of physical and chemical conditions, but those precipitating from hot, aqueous fluids-i.e. the hydrothermal deposits-form generally below 700??C and at pressures of only 1 or 2 kbar or less. Natural aqueous fluids in rocks may extract metal and sulfur from a variety of rock types or may acquire them as a residual heritage from a crystallizing silicate magma. Ore-forming hydrothermal fluids never appear as hot springs (except in deep, submarine situations) because they boil, mix with surface waters, and cool, thereby losing their ore-bearing ability before reaching the surface. Mineral systems function as chemical buffers and indicators just as buffers and indicators function in a chemical laboratory. By reading the record written in the buffer/indicator assemblages of minerals one can reconstruct many aspects of the former chemical environment. By studying the record of changing conditions one may deduce information regarding the processes functioning to create the succession of chemical environments and the ore deposits they represent. The example of the OH vein at Creede, Colorado, shows a pH buffered by the K-feldspar + muscovite + quartz assemblage and the covariation of S2 and O2 buffered by the assemblage chlorite + pyrite + quartz. Boiling of the ore fluid led to its oxidation to hematite-bearing assemblages and simultaneously produced an intensely altered, sericitic capping over the vein in response to the condensation of vapors bearing acidic components. The solubility of metals as calculated from experimental and theoretical studies of mineral solubility appears too low by at least one or two powers of ten to explain the mineralization at Creede. In contrast to Creede where the mineral stabilities all point to a relatively consistent chemistry, the Mississippi Valley type deposits present a puzzle of conflicting chemical clues that are impossible to reconcile with any single equilibrium situation. Thus we must

  15. Chemical weathering within high mountain depositional structures

    NASA Astrophysics Data System (ADS)

    Emberson, R.; Hovius, N.; Hsieh, M.; Galy, A.

    2013-12-01

    Material eroded from active mountain belts can spend extended periods in depositional structures within the mountain catchments before reaching its final destination. This can be in the form of colluvial fills, debris fans, or alluvial valley fills and terraces. The existence of these landforms is testament to the catastrophic nature of the events that lead to their formation. Sourced by landslides or debris flows, the material that forms them is in many cases either unweathered or incompletely weathered (e.g. Hsieh and Chyi 2010). Due to their porosity and permeability, these deposits likely serve as locations for extensive chemical weathering within bedrock landscapes. Recent studies considering the weathering flux from active mountain belts (e.g. Calmels et al. 2011) have distinguished between shallow and deep groundwater in terms of the contribution to the solute budget from a catchment; in this study we have attempted to more tightly constrain the sources of these groundwater components in the context of the previously mentioned depositional structures. We have collected water samples from a large number of sites within the Chen-you-lan catchment (370 km2) in central west Taiwan to elucidate the location of chemical weathering as well as how the sourcing of weathering products varies depending on the meteorological conditions. Central Taiwan has good attributes for this work considering both the extremely active tectonics and tropical climate, (including extensive cyclonic activity) which stimulate both extensive physical erosion (Dadson et al. 2003) and chemical weathering (Calmels et al. 2011). The Chen-you-lan catchment in particular contains some of the largest alluvial deposits inside the Taiwan mountain belt (Hsieh and Chyi 2010). Our preliminary results suggest that weathering within intramontane deposits may be a significant source of solutes, with the hyporheic systems within mountain rivers of particular import. This input of solutes occurs over

  16. Development of new duplex treatments on 100Cr6steel combining Thermochemical Treatments, Laser Shock Peening and Physical Vapour Deposition

    NASA Astrophysics Data System (ADS)

    Osés, J.; Fuentes, G. G.; Santo Domingo, S.; Miguel, I.; Gimeno, S.; Carreras, L.; Peyre, P.; Gorny, C.

    2017-05-01

    100Cr6 steel (AISI 52100) is one of the most used steel grades in the manufacturing of through hardening bearings mainly due to its properties: controlled impurities during steel making process, high hardenability and well known mechanical properties such as wear and fatigue resistance on clean environments. These characteristics play an important role on the performance of a bearing together with the bearing design, loads and environment. However, there is an increasing set of demanding applications where the above mentioned steel does not fulfil the required needs and thus, bearing manufacturers continuously work on the development of technologies to improve the bearing performance. Nowadays thermochemical treatments (TCT), such as carbonitriding are being applied to this steel in order to enhance the performance of such pieces in contaminated environment, where particles can produce defects on the raceway, increasing the onset of defects that eventually lead to premature fail. These treatments induce the formation of carbides and nitrides which are directly related to the enhancement of the wear resistance and also to increasing the amount of Retained Austenite (RA) in the surface which may have a beneficial effect as it delays the crack propagation on subsurface regions, then increasing bearing fatigue life. In this work, different TCTs have been applied to 100Cr6 steel flat samples. Using a tribometer (ball-on-disc configuration) and a grinding machine, surface and in-depth wear resistance measurements have been carried out, obtaining wear resistance profiles that have been correlated with the microstructure, microhardness profiles and RA content. The most promising TCT has been combined either with Laser Shock Peening (LSP) treatments or carbonaceous Physical Vapour Deposition (PVD) coatings with the aim of improving not only the wear resistance but also the CoF of the duplex treated sample. The results obtained on flat samples are promising; the combination

  17. Chemical vapor deposition of copper films

    NASA Astrophysics Data System (ADS)

    Borgharkar, Narendra Shamkant

    We have studied the kinetics of copper chemical vapor deposition (CVD) for interconnect metallization using hydrogen (Hsb2) reduction of the Cu(hfac)sb2 (copper(II) hexafluoroacetylacetonate) precursor. Steady-state deposition rates were measured using a hot-wall microbalance reactor. For base case conditions of 2 Torr Cu(hfac)sb2, 40 Torr Hsb2, and 300sp°C, a growth rate of 0.5 mg cmsp{-2} hrsp{-1} (ca. 10 nm minsp{-1}) is observed. Reaction order experiments suggest that the deposition rate passes through a maximum at partial pressure of 2 Torr of Cu(hfac)sb2. The deposition rate has an overall half-order dependence on Hsb2 partial pressure. A Langmuir-Hinshelwood rate expression is used to describe the observed kinetic dependencies on Cu(hfac)sb2, Hsb2, and H(hfac). Based on the rate expression a mechanism is proposed in which the overall rate is determined by the surface reaction of adsorbed Cu(hfac)sb2 and H species. Additionally, the role of alcohols in enhancing the deposition rate has been investigated. Addition of isopropanol results in a six fold enhancement to yield a deposition rate of 3.3 mg cmsp{-2} hrsp{-1} (ca. 60 nm minsp{-1}) at 5 Torr of isopropanol, 0.4 Torr Cu(hfac)sb2, 40 Torr Hsb2, and 300sp°C. Ethanol and methanol give lower enhancements of 1.75 and 1.1 mg cmsp{-2} hrsp{-1}, respectively. A mechanism based on the ordering of the aqueous pKsba values of the alcohols is proposed to explain the observed results. Lastly, we have built a warm-wall Pedestal reactor apparatus to demonstrate copper CVD on TiN/Si substrates. The apparatus includes a liquid injection system for transport of isopropanol-diluted precursor solutions. At optimized conditions of precursor and substrate pre-treatments, we have deposited uniform films of copper on TiN/Si substrates at an average deposition rate of 3.0 mg cmsp{-2} hrsp{-1} (ca. 60 nm minsp{-1}).

  18. Chemical vapor deposited carbon nanotubes for aqueous H2-Cl2 fuel cells.

    PubMed

    Suryavanshi, U B; Bhosale, C H

    2010-06-01

    Carbon nanotubes having large surface area is an interesting material to develop H2-Cl2 fuel cell electrodes. The attempts were made to deposit carbon nanotubes on porous substrates by chemical vapour deposition. Turpentine oil (C10H16) was used as a precursor, decomposed at 1100 degrees C reactor temperature. Nickel, platinum, tin, Ni-Pt, Ni-Sn, Pt-Sn, Ni-Pt-Sn catalysts were used to grow carbon nanotubes. Nickel was deposited with electrodeposition, platinum with sputter coater and tin with vacuum deposition technique. The developed electrodes were characterized by XRD, SEM, TEM, FTIR, and resistivity by van-der Pauw method. Carbon nanotubes have been formed for 0.25 N nickel deposited for 45 and 60 min; 0.5 N, 0.75 N and 1 N nickel deposited for 15 to 60 min, at the interval of 15. Ni-Pt, Ni-Sn, Pt-Sn and Ni-Pt-Sn activated carbon also shows the well grown CNTs. Aqueous H2-Cl2 fuel cell performance was tested with these grown carbon nanotubes. 40% KCl with 1067 mohm(-1) cm(-1) conductivity was used as electrolyte. Linear sweep voltametry shows reduction potential for hydrogen gas. Chronoamperometry results show better half cell performance for nickel, deposited with 1 N, 45 min deposition time period; and combination of Ni-Pt-Sn with 140, and 110-100 mA/cm2 stable current density respectively.

  19. Preventing Chemical-Vapor Deposition In Selected Areas

    NASA Technical Reports Server (NTRS)

    Keeley, Joseph T.; Goela, Jitendra Singh; Pickering, Michael A.; Taylor, Raymond L.

    1991-01-01

    Method for prevention of chemical-vapor deposition of material in selected areas developed. Gas shroud isolates specific area from rest of deposition system. Inert gas flowing from beneath substrate prevents deposition between substrate and outer ring. Method extremely successful in selective deposition of SiC in chemical-vapor-deposition reactor. Used in deposition of SiC mirror blanks in Large Mirror Substrate and Lidar Mirror programs. Critical element in overall chemical-vapor-deposition process for producing large, lightweight mirrors.

  20. Optical Emission Spectroscopy of Electron Cyclotron Resonance-Plasma Enchanced Metalorganic Chemical Vapor Deposition Process for Deposition of GaN Film

    NASA Astrophysics Data System (ADS)

    Fu, Silie; Chen, Junfang; Li, Yun; Li, Wei; Zhang, Maoping; Hu, Shejun

    2008-02-01

    An investigation was made into the nitrogen-trimethylgallium mixed electron cyclotron resonance (ECR) plasma by optical emission spectroscopy (OES). The ECR plasma enhanced metalorganic chemical vapour deposition technology was adopted to grow GaN film on an α-Al2O3 substrate. X-ray diffraction (XRD) analyses showed that the peak of GaN (0002) was at 2θ = 34.48°, being sharper and more intense with the increase in the N2: trimethylgallium(TMG) flow ratio. The results demonstrate that the electron cyclotron resonance-plasma enchanced metalorganic chemical vapor deposition (ECR-MOPECVD) technology is evidently advantageous for the deposition of GaN film at a low growth temperature.

  1. Preparation, characterisation and optimisation of lithium battery anodes consisting of silicon synthesised using Laser assisted Chemical Vapour Pyrolysis

    NASA Astrophysics Data System (ADS)

    Veliscek, Ziga; Perse, Lidija Slemenik; Dominko, Robert; Kelder, Erik; Gaberscek, Miran

    2015-01-01

    Suitability of silicon prepared using Laser assisted Chemical Vapour Pyrolysis (LaCVP) as a potential anode material in lithium batteries is systematically investigated. Its compositional, morphological, physical-chemical and electrochemical properties are compared to a current benchmark commercial silicon. Important differences in particle size and particle composition are found which, as shown, affect critically the rheological properties of the corresponding electrode slurries. In order to overcome the rheological problems of prepared nanosilicon, we introduce and optimise a spraying method instead of using the usual casting technique for slurry application. Interestingly, the optimised electrodes show similar electrochemical performance, regardless of the particle size or composition of nanosilicon. This unexpected result is explained by the unusually high resistance of electrochemical wiring in silicon-based electrodes (about 60 Ohm per 1 mg cm-2 of active material loading). Despite that, the optimised material still shows a capacity up to 1200 mA h g-1 at a relatively high loading of 1.6 mg cm-2 and after 20 cycles. On the other hand, by decreasing the loading to below ca. 0.9 mg cm-2 the wiring problems are effectively overcome and capacities close to theoretical values can be obtained.

  2. Detection of chemical substances in water using an oxide nanowire transistor covered with a hydrophobic nanoparticle thin film as a liquid-vapour separation filter

    NASA Astrophysics Data System (ADS)

    Lim, Taekyung; Lee, Jonghun; Ju, Sanghyun

    2016-08-01

    We have developed a method to detect the presence of small amounts of chemical substances in water, using a Al2O3 nanoparticle thin film covered with phosphonic acid (HDF-PA) self-assembled monolayer. The HDF-PA self-assembled Al2O3 nanoparticle thin film acts as a liquid-vapour separation filter, allowing the passage of chemical vapour while blocking liquids. Prevention of the liquid from contacting the SnO2 nanowire and source-drain electrodes is required in order to avoid abnormal operation. Using this characteristic, the concentration of chemical substances in water could be evaluated by measuring the current changes in the SnO2 nanowire transistor covered with the HDF-PA self-assembled Al2O3 nanoparticle thin film.

  3. Chemical Vapor Deposition Of Silicon Carbide

    NASA Technical Reports Server (NTRS)

    Powell, J. Anthony; Larkin, David J.; Matus, Lawrence G.; Petit, Jeremy B.

    1993-01-01

    Large single-crystal SiC boules from which wafers of large area cut now being produced commerically. Availability of wafers opens door for development of SiC semiconductor devices. Recently developed chemical vapor deposition (CVD) process produces thin single-crystal SiC films on SiC wafers. Essential step in sequence of steps used to fabricate semiconductor devices. Further development required for specific devices. Some potential high-temperature applications include sensors and control electronics for advanced turbine engines and automobile engines, power electronics for electromechanical actuators for advanced aircraft and for space power systems, and equipment used in drilling of deep wells. High-frequency applications include communication systems, high-speed computers, and microwave power transistors. High-radiation applications include sensors and controls for nuclear reactors.

  4. Characterization of Metalorganic Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Jesser, W. A.

    1998-01-01

    A series of experimental and numerical investigations to develop a more complete understanding of the reactive fluid dynamics of chemical vapor deposition were conducted. In the experimental phases of the effort, a horizontal CVD reactor configuration was used for the growth of InP at UVA and for laser velocimetry measurements of the flow fields in the reactor at LaRC. This horizontal reactor configuration was developed for the growth of III-V semiconductors and has been used by our research group in the past to study the deposition of both GaAs and InP. While the ultimate resolution of many of the heat and mass transport issues will require access to a reduced-gravity environment, the series of groundbased research makes direct contributions to this area while attempting to answer the design questions for future experiments of how low must gravity be reduced and for how long must this gravity level be maintained to make the necessary measurements. It is hoped that the terrestrial experiments will be useful for the design of future microgravity experiments which likely will be designed to employ a core set of measurements for applications in the microgravity environment such as HOLOC, the Fluid Physics/Dynamics Facility, or the Schlieren photography, the Laser Imaging Velocimetry and the Laser Doppler Velocimetry instruments under development for the Advanced Fluids Experiment Module.

  5. Chemical characteristics of some major uranium deposits in western USA

    SciTech Connect

    Spirakis, C.S.; Pierson, C.T.

    1984-04-01

    Multi-element chemical analyses of several thousand samples were retrieved from the US Geological Survey's computerized Rock Analysis Storage System and used to estimate the average abundances of various elements in each of several types of uranium deposits, in altered rocks associated with some of these deposits, and in unmineralized parts of the various host rocks. Deposits for which results are presented include the tabular deposits in the Morrison Formation, Ambrosia Lake district, New Mexico; secondary deposits in the Ambrosia Lake district; tabular deposits in the Morrison Formation of the Henry Mountains, Utah; tabular deposits in the Chinle Formation in Utah and Colorado; roll-type deposits in Tertiary rocks from the Texas Gulf district; roll-type deposits in the Tertiary basins of Wyoming; tabular deposits in the Entrada Sandstone in Colorado; and a vein-type deposit in crystalline rocks of the Front Range of Colorado. Statistical treatment of the data identified elements that were notably more or less abundant in the deposits and altered rocks than in the unmineralized parts of the host rocks. Comparisons of the mean abundances of elements in the deposits show that the chemical composition of roll-type deposits varies greatly even among deposits in the same district. By contrast, the chemical characteristics of tabular deposits display little variation; the Ambrosia Lake tabular deposits and those of the Henry Mountains district are particularly similar. The data place some constraints on the geochemical aspects of genetic models and suggest certain elements as potential prospecting guides.

  6. Surface chemical deposition of advanced electronic materials

    NASA Astrophysics Data System (ADS)

    Bjelkevig, Cameron

    The focus of this work was to examine the direct plating of Cu on Ru diffusion barriers for use in interconnect technology and the substrate mediated growth of graphene on boron nitride for use in advanced electronic applications. The electrodeposition of Cu on Ru(0001) and polycrystalline substrates (with and without pretreatment in an iodine containing solution) has been studied by cyclic voltammetry (CV), current--time transient measurements (CTT), in situ electrochemical atomic force microscopy (EC-AFM), and X-ray photoelectron spectroscopy (XPS). The EC-AFM data show that at potentials near the OPD/UPD threshold, Cu crystallites exhibit pronounced growth anisotropy, with lateral dimensions greatly exceeding vertical dimensions. XPS measurements confirmed the presence and stability of adsorbed I on the Ru surface following pre-treatment in a KI/H2SO4 solution and following polarization to at least -200 mV vs. Ag/AgCl. CV data of samples pre-reduced in I-containing electrolyte exhibited a narrow Cu deposition peak in the overpotential region and a UPD peak. The kinetics of the electrodeposited Cu films was investigated by CTT measurements and applied to theoretical models of nucleation. The data indicated that a protective I adlayer may be deposited on an airexposed Ru electrode as the oxide surface is electrochemically reduced, and that this layer will inhibit reformation of an oxide during the Cu electroplating process. A novel method for epitaxial graphene growth directly on a dielectric substrate of systematically variable thickness was studied. Mono/multilayers of BN(111) were grown on Ru(0001) by atomic layer deposition (ALD), exhibiting a flat (non-nanomesh) R30(✓3x✓3) structure. BN(111) was used as a template for growth of graphene by chemical vapor deposition (CVD) of C2H4 at 1000 K. Characterization by LEED, Auger, STM/STS and Raman indicate the graphene is in registry with the BN substrate, and exhibits a HOPG-like 0 eV bandgap density

  7. Oil mist and vapour concentrations from drilling fluids: inter- and intra-laboratory comparison of chemical analyses.

    PubMed

    Galea, Karen S; Searl, Alison; Sánchez-Jiménez, Araceli; Woldbæk, Torill; Halgard, Kristin; Thorud, Syvert; Steinsvåg, Kjersti; Krüger, Kirsti; Maccalman, Laura; Cherrie, John W; van Tongeren, Martie

    2012-01-01

    There are no recognized analytical methods for measuring oil mist and vapours arising from drilling fluids used in offshore petroleum drilling industry. To inform the future development of improved methods of analysis for oil mist and vapours this study assessed the inter- and intra-laboratory variability in oil mist and vapour analysis. In addition, sample losses during transportation and storage were assessed. Replicate samples for oil mist and vapour were collected using the 37-mm Millipore closed cassette and charcoal tube assembly. Sampling was conducted in a simulated shale shaker room, similar to that found offshore for processing drilling fluids. Samples were analysed at two different laboratories, one in Norway and one in the UK. Oil mist samples were analysed using Fourier transform infrared spectroscopy (FTIR), while oil vapour samples were analysed by gas chromatography (GC). The comparison of replicate samples showed substantial within- and between-laboratory variability in reported oil mist concentrations. The variability in oil vapour results was considerably reduced compared to oil mist, provided that a common method of calibration and quantification was adopted. The study also showed that losses can occur during transportation and storage of samples. There is a need to develop a harmonized method for the quantification of oil mist on filter and oil vapour on charcoal supported by a suitable proficiency testing scheme for laboratories involved in the analysis of occupational hygiene samples for the petroleum industry. The uncertainties in oil mist and vapour measurement have substantial implications in relation to compliance with occupational exposure limits and also in the reliability of any exposure-response information reported in epidemiological studies.

  8. High-performance perovskite CH3NH3PbI3 thin films for solar cells prepared by single-source physical vapour deposition

    PubMed Central

    Fan, Ping; Gu, Di; Liang, Guang-Xing; Luo, Jing-Ting; Chen, Ju-Long; Zheng, Zhuang-Hao; Zhang, Dong-Ping

    2016-01-01

    In this work, an alternative route to fabricating high-quality CH3NH3PbI3 thin films is proposed. Single-source physical vapour deposition (SSPVD) without a post-heat-treating process was used to prepare CH3NH3PbI3 thin films at room temperature. This new process enabled complete surface coverage and moisture stability in a non-vacuum solution. Moreover, the challenges of simultaneously controlling evaporation processes of the organic and inorganic sources via dual-source vapour evaporation and the heating process required to obtain high crystallization were avoided. Excellent composition with stoichiometry transferred from the powder material, a high level of tetragonal phase-purity, full surface coverage, well-defined grain structure, high crystallization and reproducibility were obtained. A PCE of approximately 10.90% was obtained with a device based on SSPVD CH3NH3PbI3. These initial results suggest that SSPVD is a promising method to significantly optimize perovskite CH3NH3PbI3 solar cell efficiency. PMID:27426686

  9. High-performance perovskite CH3NH3PbI3 thin films for solar cells prepared by single-source physical vapour deposition

    NASA Astrophysics Data System (ADS)

    Fan, Ping; Gu, Di; Liang, Guang-Xing; Luo, Jing-Ting; Chen, Ju-Long; Zheng, Zhuang-Hao; Zhang, Dong-Ping

    2016-07-01

    In this work, an alternative route to fabricating high-quality CH3NH3PbI3 thin films is proposed. Single-source physical vapour deposition (SSPVD) without a post-heat-treating process was used to prepare CH3NH3PbI3 thin films at room temperature. This new process enabled complete surface coverage and moisture stability in a non-vacuum solution. Moreover, the challenges of simultaneously controlling evaporation processes of the organic and inorganic sources via dual-source vapour evaporation and the heating process required to obtain high crystallization were avoided. Excellent composition with stoichiometry transferred from the powder material, a high level of tetragonal phase-purity, full surface coverage, well-defined grain structure, high crystallization and reproducibility were obtained. A PCE of approximately 10.90% was obtained with a device based on SSPVD CH3NH3PbI3. These initial results suggest that SSPVD is a promising method to significantly optimize perovskite CH3NH3PbI3 solar cell efficiency.

  10. High-performance perovskite CH3NH3PbI3 thin films for solar cells prepared by single-source physical vapour deposition.

    PubMed

    Fan, Ping; Gu, Di; Liang, Guang-Xing; Luo, Jing-Ting; Chen, Ju-Long; Zheng, Zhuang-Hao; Zhang, Dong-Ping

    2016-07-18

    In this work, an alternative route to fabricating high-quality CH3NH3PbI3 thin films is proposed. Single-source physical vapour deposition (SSPVD) without a post-heat-treating process was used to prepare CH3NH3PbI3 thin films at room temperature. This new process enabled complete surface coverage and moisture stability in a non-vacuum solution. Moreover, the challenges of simultaneously controlling evaporation processes of the organic and inorganic sources via dual-source vapour evaporation and the heating process required to obtain high crystallization were avoided. Excellent composition with stoichiometry transferred from the powder material, a high level of tetragonal phase-purity, full surface coverage, well-defined grain structure, high crystallization and reproducibility were obtained. A PCE of approximately 10.90% was obtained with a device based on SSPVD CH3NH3PbI3. These initial results suggest that SSPVD is a promising method to significantly optimize perovskite CH3NH3PbI3 solar cell efficiency.

  11. Modeling of Tungsten Thermal Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Kim, Byunghoon; Akiyama, Yasunobu; Imaishi, Nobuyuki; Park, Heung-Chul

    1999-05-01

    Low-pressure chemical vapor deposition (LPCVD) of tungsten (W)film on silicon (Si) substrate was performed by reducting hexafluoride(WF6) with hydrogen. This CVD system is known for its nonlineardependence of growth rate on WF6 concentration. This study adopted asimple surface-reaction model which assumes that the precursor, i.e.,WF6, in the gas phase adsorbs on solid surfaces and then the adsorbedWF6 molecule is converted into tungsten solid film. The two kineticparameters involved in the model are derived from the experimentalresults. The solidification rate constant (ks) is equal to the growthrate at very high WF6 concentrations. The adsorption rate constant(ka) is derived from profile analyses of films grown in microtrenchesunder very low WF6 concentrations by applying the conventional MonteCarlo simulation code, which is valid for linear surface-reactionsystems. In the temperature range of 623 to 823 K, ka and ks haveactivation energies of 82 kJmol-1, 66.1 kJmol-1, respectively. A newlyproposed Monte Carlo simulation for nonlinear reaction systems, incombination with the two kinetic parameters, can quantitativelypredict the shape of film in microtrenches for a wide range oftemperatures and WF6 concentrations.

  12. Computational studies of elementary steps relating to boron doping during diamond chemical vapour deposition.

    PubMed

    Cheesman, Andrew; Harvey, Jeremy N; Ashfold, Michael N R

    2005-03-21

    Density functional theory-based electronic structure computations on small models of the diamond {100} surface have enabled prediction of the energetics and activation parameters of a number of plausible mechanistic steps for boron incorporation into, and boron loss from, the growing diamond surface. Initial proving calculations for the carbon-only case show, as in previous work, that the rate-limiting step for diamond growth involves opening of a five-membered ring species, and subsequent closure to form six-membered rings as in bulk diamond. The five-membered ring intermediate arises following 2 x 1 reconstruction of the {100} surface, or at steps on the {111} surface. Diamond growth arises as a result of successful competition between the ring-opening step and a two-carbon loss step, both of which involve significant activation barriers. In the boron case, we find that BH(x) (x = 0-3) species can all bind to radical sites on the diamond {100} surface to form stable adducts. Interconversion between the surface bound BH, species is facile at the H and H2 number densities and temperatures typical for diamond CVD conditions. B incorporation can occur by a ring expansion mechanism, as in the all-carbon case, and by direct insertion of surface bound BH (and B) species into the C-C bond on the diamond {100} surface. BH(x) loss processes identified include release of surface bound BH3 and/or CH2BH species into the gas phase. Both B incorporation into, and B loss from, the diamond {100} surface are deduced to be significantly less energy demanding than the corresponding carbon addition and loss processes.

  13. Chemical vapour deposition growth of large single crystals of monolayer and bilayer graphene.

    PubMed

    Zhou, Hailong; Yu, Woo Jong; Liu, Lixin; Cheng, Rui; Chen, Yu; Huang, Xiaoqing; Liu, Yuan; Wang, Yang; Huang, Yu; Duan, Xiangfeng

    2013-01-01

    The growth of large-domain single crystalline graphene with the controllable number of layers is of central importance for large-scale integration of graphene devices. Here we report a new pathway to greatly reduce the graphene nucleation density from ~10(6) to 4 nuclei cm(-2), enabling the growth of giant single crystals of monolayer graphene with a lateral size up to 5 mm and Bernal-stacked bilayer graphene with the lateral size up to 300 μm, both the largest reported to date. The formation of the giant graphene single crystals eliminates the grain boundary scattering to ensure excellent device-to-device uniformity and remarkable electronic properties with the expected quantum Hall effect and the highest carrier mobility up to 16,000 cm(2) V(-1) s(-1). The availability of the ultra large graphene single crystals can allow for high-yield fabrication of integrated graphene devices, paving a pathway to scalable electronic and photonic devices based on graphene materials.

  14. The role of carbon precursor on carbon nanotube chirality in floating catalyst chemical vapour deposition.

    PubMed

    Barnard, J S; Paukner, C; Koziol, K K

    2016-10-06

    We have studied the influence of different carbon precursors (methane, ethanol and toluene) on the type, diameter and chiral angle distributions of carbon nanotubes (CNTs) grown with the floating catalyst technique in a horizontal gas-flow reactor. Using electron diffraction to study their atomic structures, we found that ethanol and toluene precursors gave high single-wall CNT yields (92% and 89% respectively), with narrow diameter distributions: 1.1 nm to 1.7 nm (ethanol); 1.3 nm to 2.1 nm (toluene), with a propensity for armchair-type chiral angles. In contrast, methane-grown CNTs gave high double-wall CNT yields (75%) with broader diameter populations: 1.2 to 4.6 nm (inner CNT) and 2.2 to 5.3 nm (outer CNT) with a more uniform spread of chiral angles, but weakly peaked around 15 to 20 degrees. These observations agree with known growth models. However, double-wall CNTs grown with toluene showed an unusually narrow interlayer spacing of 0.286 ± 0.003 nm with suggestions of large, 20° to 25°, differences between inner and outer CNT chiral angles. Methane gave a large interlayer spacing (0.385 ± 0.002 nm) with suggestions of small 5° to 10° inter-tube chirality correlations.

  15. Chemical vapour deposition growth of large single crystals of monolayer and bilayer graphene

    NASA Astrophysics Data System (ADS)

    Zhou, Hailong; Yu, Woo Jong; Liu, Lixin; Cheng, Rui; Chen, Yu; Huang, Xiaoqing; Liu, Yuan; Wang, Yang; Huang, Yu; Duan, Xiangfeng

    2013-06-01

    The growth of large-domain single crystalline graphene with the controllable number of layers is of central importance for large-scale integration of graphene devices. Here we report a new pathway to greatly reduce the graphene nucleation density from ~106 to 4 nuclei cm-2, enabling the growth of giant single crystals of monolayer graphene with a lateral size up to 5 mm and Bernal-stacked bilayer graphene with the lateral size up to 300 μm, both the largest reported to date. The formation of the giant graphene single crystals eliminates the grain boundary scattering to ensure excellent device-to-device uniformity and remarkable electronic properties with the expected quantum Hall effect and the highest carrier mobility up to 16,000 cm2 V-1 s-1. The availability of the ultra large graphene single crystals can allow for high-yield fabrication of integrated graphene devices, paving a pathway to scalable electronic and photonic devices based on graphene materials.

  16. Strain and Structure Heterogeneity in MoS2 Atomic Layers Grown by Chemical Vapour Deposition

    DTIC Science & Technology

    2014-11-18

    AGENCY NAME(S) AND ADDRESS (ES) U.S. Anny Research Office P.O. Box 12211 Research Triangle Park , NC 27709-2211 12. DISTRIBUTION AVAILIBILITY...University, Singapore 639798, Singapore. 3 (INTRA CNRS/NTU/THALES, UMI3288, Research Techno Plaza, 50 Nanyang Drive, Border X Block, level 6, Singapore

  17. Excitation mechanism and thermal emission quenching of Tb ions in silicon rich silicon oxide thin films grown by plasma-enhanced chemical vapour deposition—Do we need silicon nanoclusters?

    SciTech Connect

    Podhorodecki, A. Golacki, L. W.; Zatryb, G.; Misiewicz, J.; Wang, J.; Jadwisienczak, W.; Fedus, K.

    2014-04-14

    In this work, we will discuss the excitation and emission properties of Tb ions in a Silicon Rich Silicon Oxide (SRSO) matrix obtained at different technological conditions. By means of electron cyclotron resonance plasma-enhanced chemical vapour deposition, undoped and doped SRSO films have been obtained with different Si content (33, 35, 39, 50 at. %) and were annealed at different temperatures (600, 900, 1100 °C). The samples were characterized optically and structurally using photoluminescence (PL), PL excitation, time resolved PL, absorption, cathodoluminescence, temperature dependent PL, Rutherford backscattering spectrometry, Fourier transform infrared spectroscopy and positron annihilation lifetime spectroscopy. Based on the obtained results, we discuss how the matrix modifications influence excitation and emission properties of Tb ions.

  18. Graphene decorated microelectrodes for simultaneous detection of ascorbic, dopamine, and folic acids by means of chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Namdar, N.; Hassanpour Amiri, M.; Dehghan Nayeri, F.; Gholizadeh, A.; Mohajerzadeh, S.

    2015-09-01

    In this paper, high quality and large area graphene layers were synthesized using thermal chemical vapour deposition on copper foil substrates. We use graphene incorporated electrodes to measure simultaneously ascorbic acid, dopamine and folic acid. Cyclic voltammetry and differential pulse voltammetry methods were used to evaluate electrochemical behaviour of the grown graphene layers. The graphene-modified electrode shows large electrochemical potential difference compared to bare gold electrodes with higher current responses. Also our fabricated electrodes configuration can be used easily for microfluidic analysis.

  19. Atmospheric deposition of toxic chemicals to the Great Lakes: A review of data through 1994

    NASA Astrophysics Data System (ADS)

    Hoff, R. M.; Strachan, W. M. J.; Sweet, C. W.; Chan, C. H.; Shackleton, M.; Bidleman, T. F.; Brice, K. A.; Burniston, D. A.; Cussion, S.; Gatz, D. F.; Harlin, K.; Schroeder, W. H.

    An update is presented of the atmospheric loadings of 11 organochlorine chemicals, five trace elements and four polynuclear aromatic hydrocarbons (PAHs) to the Great Lakes. Intercomparison of this 1994 estimate is made with earlier loading estimates made in 1988 and 1992 by Strachan and Eisenreich. The flux calculations include wet deposition, dry deposition and two-film vapour transfer across each of the lakes. Of these processes, confidence is highest for wet deposition estimates and lowest for the gas transfer component. This is unfortunate since gas transfer has been estimated to be the most important process for the OC chemicals. PCBs, dieldrin, HCB, DDE, phenanthrene and pyrene are currently showing net loss from the lakes to the atmosphere via volatilization. p,p'-DDT is still being loaded into the lakes from the atmosphere. α- and γ-HCH are near equilibrium with the water bodies and show volatilization in the summer and fall for α-HCH but net deposition for the rest of the year. Hg assessment for the net loading to Lake Superior is given and points out the importance of each of the atmospheric deposition routes for this trace element. The results taken from the IADN program provide a detailed data set for the interpretation of atmospheric impact on the lakes. Relative assessment in relation to other sources of input is difficult due to sparsity of data in other media of the lakes. Particularly important is the inconsistent intercomparison of air and water concentrations from different years leading to gas transfer estimates which could be dated or incorrect. For chemicals which are showing rapidly changing concentrations in the lakes, the calculation of gaseous mass transfer should be made on the basis of short-term, concurrent measurements in both air and water.

  20. Vapour breakthrough behaviour of carbon tetrachloride - A simulant for chemical warfare agent on ASZMT carbon: A comparative study with whetlerite carbon

    NASA Astrophysics Data System (ADS)

    Srivastava, Avanish Kumar; Shah, Dilip K.; Mahato, T. H.; Roy, A.; Yadav, S. S.; Srivas, S. K.; Singh, Beer

    2013-06-01

    ASZMT and whetlerite carbon was prepared by impregnation of active carbon with ammonical salts of Cu (II), Ag (I), Zn (II), Mo (VI), TEDA and Cu (II), Ag (I), Cr (VI), NaOH, C5H5N respectively using incipient wetness technique. Thereafter, impregnated carbon systems were characterized using scanning electron microscopy, energy dispersive X-ray, atomic absorption spectroscopy, thermogravimetry and surface characterization techniques. Impregnated carbon systems were evaluated under dynamic conditions against carbon tetrachloride (CCl4) vapour that was used as a simulant for the persistent chemical warfare agents for testing breakthrough times of filter cartridges and canisters of gas masks in the national approval test of respirators. The protective potential of ASZMT carbon was compared with the whetlerite carbon which is presently used in NBC filtration system. The effect of CCl4 concentration, test flow rate, temperature and relative humidity on the breakthrough behaviour of the impregnated carbon systems has also been studied. The study clearly indicated that the whetlerite carbon possessed breakthrough time greater than ASZMT carbon. However, ASZMT carbon provided adequate protection against CCl4 vapours and can be used as an alternative to whetlerite carbon that contain Cr(VI), which is reported to be carcinogenic and having lesser shelf life. The study indicated the breakthrough time of impregnated carbon systems were found to decrease with the increase of the CCl4 concentration and flow rate. The variation in temperature and relative humidity did not significantly affect the breakthrough behaviour of impregnated carbon systems at high vapour concentration of CCl4 whereasbreak through time of impregnated carbon systems reduced by an increase of relative humidity at low CCl4 vapour concentration.

  1. Effect of Sodium Treatment on the Performance of Electrostatic Spray Assisted Vapour Deposited Copper-poor Cu(In,Ga)(S,Se) 2 Solar Cells.

    PubMed

    Wang, Mingqing; Hossain, Md Anower; Choy, Kwang-Leong

    2017-07-28

    In our work, eco-friendly, non-vacuum and low cost Electrostatic Spray Assisted Vapour Deposition (ESAVD) method has been used to produce Cu(In,Ga)(S,Se)2 (CIGS) solar cells. Copper (Cu) deficient (Cu/In + Ga = 0.76) CIGS films were designed to avoid the rather dangerous KCN treatment step for the removal of conductive minor phases of Cu2S/Cu2Se. A simple sodium (Na) treatment method was used to modify the morphology and electronic properties of the absorber and it clearly improved the solar cell performance. The SEM and XRD results testified a slightly increase of the grain size and (112) crystal orientation in the Na-incorporated CIGS thin films. From the Mott-schottky results, it can be seen that the functions of the Na treatment in our non-vacuum deposited CIGS are mainly used for defect passivation and reduction of charge recombination. Photovoltaic characteristics and j-V curve demonstrated that the dipping of CIGS films in 0.2 M NaCl solution for 20 minutes followed by selenization at 550 °C under selenium vapor resulted in the optimum photovoltaic performance, with j sc, V oc, FF and η of the optimized solar cell of 29.30 mA cm(-2), 0.564 V, 65.59% and 10.83%, respectively.

  2. Chemical vapor deposition of graphene single crystals.

    PubMed

    Yan, Zheng; Peng, Zhiwei; Tour, James M

    2014-04-15

    As a two-dimensional (2D) sp(2)-bonded carbon allotrope, graphene has attracted enormous interest over the past decade due to its unique properties, such as ultrahigh electron mobility, uniform broadband optical absorption and high tensile strength. In the initial research, graphene was isolated from natural graphite, and limited to small sizes and low yields. Recently developed chemical vapor deposition (CVD) techniques have emerged as an important method for the scalable production of large-size and high-quality graphene for various applications. However, CVD-derived graphene is polycrystalline and demonstrates degraded properties induced by grain boundaries. Thus, the next critical step of graphene growth relies on the synthesis of large graphene single crystals. In this Account, we first discuss graphene grain boundaries and their influence on graphene's properties. Mechanical and electrical behaviors of CVD-derived polycrystalline graphene are greatly reduced when compared to that of exfoliated graphene. We then review four representative pathways of pretreating Cu substrates to make millimeter-sized monolayer graphene grains: electrochemical polishing and high-pressure annealing of Cu substrate, adding of additional Cu enclosures, melting and resolidfying Cu substrates, and oxygen-rich Cu substrates. Due to these pretreatments, the nucleation site density on Cu substrates is greatly reduced, resulting in hexagonal-shaped graphene grains that show increased grain domain size and comparable electrical properties as to exfoliated graphene. Also, the properties of graphene can be engineered by its shape, thickness and spatial structure. Thus, we further discuss recently developed methods of making graphene grains with special spatial structures, including snowflakes, six-lobed flowers, pyramids and hexagonal graphene onion rings. The fundamental growth mechanism and practical applications of these well-shaped graphene structures should be interesting topics and

  3. Chemical Vapor Deposition Epitaxy an Patternless and Patterned Substrates.

    ERIC Educational Resources Information Center

    Takoudis, Christos G.

    1990-01-01

    Discusses chemical vapor deposition epitaxy on patternless and patterned substrates for an electronic materials processing course. Describes the processs types and features of epitaxy. Presents some potential problems of epitaxy. Lists 38 references. (YP)

  4. Chemical vapor deposition for automatic processing of integrated circuits

    NASA Technical Reports Server (NTRS)

    Kennedy, B. W.

    1980-01-01

    Chemical vapor deposition for automatic processing of integrated circuits including the wafer carrier and loading from a receiving air track into automatic furnaces and unloading on to a sending air track is discussed. Passivation using electron beam deposited quartz is also considered.

  5. Chronic nitrogen deposition influences the chemical dynamics ...

    EPA Pesticide Factsheets

    Atmospheric nitrogen deposition induces a forest carbon sink across broad parts of the Northern Hemisphere; this carbon sink may partly result from slower litter decomposition. Although microbial responses to experimental nitrogen deposition have been well-studied, evidence linking these microbial responses to changes in the degradation of specific compounds in decaying litter is sparse. We used wet chemistry and Fourier transform infrared spectroscopy (FTIR) methodologies to study the effects of chronic simulated nitrogen deposition on leaf litter and fine root chemistry during a three-year decomposition experiment at four northern hardwood forests in the north-central USA. Leaf litter and fine roots were highly different in initial chemistry such as concentrations of acid-insoluble fraction (AIF, or Klason lignin) and condensed tannins (CTs). These initial differences persisted over the course of decomposition. Results from gravimetrically-defined AIF and lignin/carbohydrate reference IR peak ratios both provide evidence that lignin in fine roots was selectively preserved under simulated nitrogen deposition. Lignin/carbohydrate peak ratios were strongly correlated with AIF, suggesting that AIF is a good predictor of lignin. Because AIF is abundant in fine roots, slower AIF degradation was the major driver of the slower fine root decomposition under nitrogen enrichment, explaining 73.9 % of the additional root mass retention. Nitrogen enrichment also slowed the

  6. Chemical vapor deposition of aluminum oxide

    DOEpatents

    Gordon, Roy; Kramer, Keith; Liu, Xinye

    2000-01-01

    An aluminum oxide film is deposited on a heated substrate by CVD from one or more alkylaluminum alkoxide compounds having composition R.sub.n Al.sub.2 (OR').sub.6-n, wherein R and R' are alkyl groups and n is in the range of 1 to 5.

  7. Temperature-dependent transport mechanisms through PE-CVD coatings: comparison of oxygen and water vapour

    NASA Astrophysics Data System (ADS)

    Kirchheim, D.; Wilski, S.; Jaritz, M.; Mitschker, F.; Gebhard, M.; Brochhagen, M.; Böke, M.; Benedikt, Jan; Awakowicz, P.; Devi, A.; Hopmann, Ch; Dahlmann, R.

    2017-10-01

    When it comes to thin coatings such as plasma-enhanced chemical vapour deposition or plasma-enhanced atomic layer deposition coatings on substrates of polymeric material, existing models often describe transport through these thin coatings as mainly driven by transport through defects of different sizes. However, temperature-dependent measurements of permeation could not confirm this hypothesis and instead gaseous transport through these thin coatings was found to more likely to occur through the molecular structure. This paper correlates existing transport models with data from oxygen transmission experiments and puts recent investigations for water vapour transmission mechanisms into context for a better understanding of gaseous transport through thin coatings.

  8. 3D-printed poly(vinylidene fluoride)/carbon nanotube composites as a tunable, low-cost chemical vapour sensing platform

    SciTech Connect

    Kennedy, Z. C.; Christ, J. F.; Evans, K. A.; Arey, B. W.; Sweet, L. E.; Warner, M. G.; Erikson, R. L.; Barrett, C. A.

    2017-01-01

    We report the production of flexible, highly-conductive poly(vinylidene flouride) (PVDF) and multi-walled carbon nanotube (MWCNT) composites as filament feedstock for 3D-printing. This account further describes, for the first-time, fused deposition modelling (FDM) derived 3D-printed objects with chemiresistive properties in response to volatile organic compounds. The typically prohibitive thermal expansion and die swell characteristics of PVDF were minimized by the presence of MWCNTs in the composites enabling straightforward processing and printing. The nanotubes form a dispersed network as characterized by helium ion microscopy, contributing to excellent conductivity (1 x 10-2 S / cm). The printed composites contain little residual metal particulate relative to parts from commercial PLA-nanocomposite material visualized by micro X-ray computed tomography (μ-CT) and corroborated with thermogravimetric analysis. Printed sensing strips, with MWCNT loadings up to 15 % mass, function as reversible vapour sensors with the strongest responses arising with organic compounds capable of readily intercalating, and subsequently swelling the PVDF matrix (acetone and ethyl acetate). A direct correlation between MWCNT concentration and resistance change was also observed, with larger responses (up to 161 % after 3 minutes) generated with decreased MWCNT loadings. These findings highlight the utility of FDM printing in generating low-cost sensors that respond strongly and reproducibly to target vapours. Furthermore, the sensors can be easily printed in different geometries, expanding their utility to wearable form factors. The proposed formulation strategy may be tailored to sense diverse sets of vapour classes through structural modification of the polymer backbone and/or functionalization of the nanotubes within the composite.

  9. 3D-printed poly(vinylidene fluoride)/carbon nanotube composites as a tunable, low-cost chemical vapour sensing platform.

    PubMed

    Kennedy, Z C; Christ, J F; Evans, K A; Arey, B W; Sweet, L E; Warner, M G; Erikson, R L; Barrett, C A

    2017-05-04

    We report the production of flexible, highly-conductive poly(vinylidene fluoride) (PVDF) and multi-walled carbon nanotube (MWCNT) composites as filament feedstock for 3D printing. This account further describes, for the first time, fused deposition modelling (FDM) derived 3D-printed objects with chemiresistive properties in response to volatile organic compounds. The typically prohibitive thermal expansion and die swell characteristics of PVDF were minimized by the presence of MWCNTs in the composites enabling straightforward processing and printing. The nanotubes form a dispersed network as characterized by helium ion microscopy, contributing to excellent conductivity (∼3 × 10(-2) S cm(-1)). The printed composites contain little residual metal particulate relative to parts from commercial PLA-nanocomposite material visualized by micro-X-ray computed tomography (μ-CT) and corroborated with thermogravimetric analysis. Printed sensing strips, with MWCNT loadings up to 15% mass, function as reversible vapour sensors with the strongest responses arising with organic compounds capable of readily intercalating and subsequently swelling the PVDF matrix (acetone and ethyl acetate). A direct correlation between MWCNT concentration and resistance change was also observed, with larger responses (up to 161% after 3 minutes) being generated with decreased MWCNT loadings. These findings highlight the utility of FDM printing in generating low-cost sensors that respond strongly and reproducibly to target vapours. Furthermore, the sensors can be easily printed in different geometries, expanding their utility to wearable form factors. The proposed formulation strategy may be tailored to sense diverse sets of vapour classes through structural modification of the polymer backbone and/or functionalization of the nanotubes within the composite.

  10. Atmospheric Transport and Deposition of Agricultural Chemicals

    NASA Astrophysics Data System (ADS)

    Majewski, M. S.; Vogel, J. R.; Capel, P. D.

    2006-05-01

    Concentrations of more than 80 pesticides and select transformation products were measured in atmospheric deposition during two growing seasons in five agricultural areas across the United States. Rainfall samples were collected at study areas in California, Indiana, Maryland, and Nebraska. In the arid Yakima Valley of Washington, dry deposition for the same compounds was estimated using air concentration measurements and depositional models. In the predominantly corn, soybean, and alfalfa growing region of Nebraska, Indiana, and Maryland, the herbicides acetochlor, alachlor, atrazine, and metolachlor where the predominant pesticides detected, and the highest concentrations ranged from 0.64 microgram per liter (ug/L) for metolachlor in a small, predominantly dairy use dominated watershed in Maryland to 6.6 ug/L and 19 ug/L for atrazine in Indiana and Nebraska, respectively. California showed a different seasonal occurrence pattern and suite of detected pesticides because the rainy season occurs during the winter months and a wide variety of crops are grown throughout the year. With the exception of metolachlor (0.23 ug/L, max.), the corn and soybean herbicides were not used to any great extent in the California study area and were not detected. The insecticides diazinon (1.21 ug/L, max.) and chlorpyrifos (0.12 ug/L, max.) were detected in nearly every sample taken in California. The Washington study area was similar to California in terms of the variety of crops grown and the pesticides use, but it receives very little rainfall. Dry deposition was estimated at this site from air concentrations and particle settling velocities. The results of these studies show the importance of the atmosphere as an additional source of pesticide loading to agricultural watersheds.

  11. Oxidation Protection Systems for Carbon-Carbon Composites Formed by Chemical Vapor Deposition and Plasma Assisted Chemical Vapor Deposition Techniques

    DTIC Science & Technology

    1992-04-22

    3 limitations. The most cow , ron technique used to deposit protective coatings is chemical vapor deposition (CVD). CVD is generally defined as "a... istalled in the gas feeding system. As illustrated in Figure 3-2, the vaporization device contains a Varian type tee adapter, in which ZrCl 4 powder was

  12. Chemical Vapor Deposition of Turbine Thermal Barrier Coatings

    NASA Technical Reports Server (NTRS)

    Haven, Victor E.

    1999-01-01

    Ceramic thermal barrier coatings extend the operating temperature range of actively cooled gas turbine components, therefore increasing thermal efficiency. Performance and lifetime of existing ceram ic coatings are limited by spallation during heating and cooling cycles. Spallation of the ceramic is a function of its microstructure, which is determined by the deposition method. This research is investigating metalorganic chemical vapor deposition (MOCVD) of yttria stabilized zirconia to improve performance and reduce costs relative to electron beam physical vapor deposition. Coatings are deposited in an induction-heated, low-pressure reactor at 10 microns per hour. The coating's composition, structure, and response to the turbine environment will be characterized.

  13. The chemical vapor deposition of zirconium carbide onto ceramic substrates

    SciTech Connect

    Glass, John A, Jr.; Palmisiano, Nick, Jr.; Welsh, R. Edward

    1999-07-01

    Zirconium carbide is an attractive ceramic material due to its unique properties such as high melting point, good thermal conductivity, and chemical resistance. The controlled preparation of zirconium carbide films of superstoichiometric, stoichiometric, and substoichiometric compositions has been achieved utilizing zirconium tetrachloride and methane precursor gases in an atmospheric pressure high temperature chemical vapor deposition system.

  14. The Chemical Vapor Deposition of Iridium.

    DTIC Science & Technology

    1981-07-01

    accepted types are made of porous tungsten impregnated with barium calcium aluminates (Levi, 1955; Brodie and Jenkins, 1956). The emission capability of the...not only does the chemical composition of the pore ends and the bulk material undergo alteration, but the crystal structure of the tungsten (Maloney... hexafluoride to iridium metal or IrF 6 species. In our work, IrF 6 was prepared and stored in fluorine-passivated apparatus, and between runs maintained at

  15. Thermocamera studies of gases and vapours.

    PubMed Central

    Carlsson, P; Ljungqvist, B; Neikter, K

    1982-01-01

    Most gases and vapours with a bipolar molecular structure absorb infrared energy. If such a gas is interposed between an object emitting infrared radiation and a thermocamera the gas will absorb some of the infrared radiation and thus cast a shadow on the thermocamera picture. In this assay it is possible to visualise the gas. This method had been used to study pollution with anaesthetic gases and vapours in operating theatres. The vapours of other chemicals used in hospitals and other places of work also have been studied. The method permits the study of dispersion and flow patterns of polluting gases and vapours during work. Images PMID:7093159

  16. Fabrication and evaluation of chemically vapor deposited tungsten heat pipe

    NASA Technical Reports Server (NTRS)

    Bacigalupi, R. J.

    1972-01-01

    A network of lithium-filled tungsten heat pipes is considered as a method of heat extraction from high temperature nuclear reactors. The need for material purity and shape versatility in these applications dictates the use of chemically vapor deposited (CVD) tungsten. Adaptability of CVD tungsten to complex heat pipe designs is shown. Deposition and welding techniques are described. Operation of two lithium-filled CVD tungsten heat pipes above 1800 K is discussed.

  17. Kinetics, Chemistry, and Morphology of Syngas Photoinitiated Chemical Vapor Deposition.

    PubMed

    Farhanian, Donya; De Crescenzo, Gregory; Tavares, Jason R

    2017-02-28

    Syngas is the product of gasification processes and is used for the production of petrochemicals. Little attention has been paid to its use in the production of oligomeric thin films under ambient conditions. Herein, the nature of the photoinitiated chemical vapor deposition of films made from syngas using high-wavelength ultraviolet light is discussed, including an exploration of the oligomeric films' structure, synthesis mechanism, and growth kinetics. Specifically, X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry analyses provide insight into the chemical structure, illustrating the effect of photogenerated radicals in the formation of aliphatic, anhydride, and cyclic structures. The films are covalently bonded to the substrate and chemically uniform. Electron and atomic force microscopy identify an islandlike morphology for the deposit. These insights into the mechanism and structure are linked to processing parameters through a study on the effect of residence time and treatment duration on the deposition rate, as determined through profilometry.

  18. Laser-induced chemical deposition from the gas phase

    NASA Astrophysics Data System (ADS)

    Teslenko, V. V.

    1990-02-01

    The results of the study of the chemical reactions involved in the deposition of various substances from the gas phase using the pulsed, quasi-continuous, and continuous laser radiation in the wavelength range 0.193-10.6 μm have been summarised. Particular attention has been paid to the deposition of inorganic substances, including non-metals (C, Si, Ge, etc.), metals (Cu, Au, Zn, Cd, Al, Cr, Mo, W, Ni), and a number of simple compounds. Detailed experimental data are given on the influence of the radiation parameters (wavelength, duration and spacing of the pulses, intensity of radiation, shape and position of the laser beam) and the nature of the reagents (hydrides, halides, carbonyls, alkyl organometallic compounds, etc.) on the rate of deposition and the composition of the deposit. The characteristics of photolytic deposition reactions and their possible applications have been examined. The bibliography contains 202 references.

  19. Observations of atmospheric chemical deposition to high Arctic snow

    NASA Astrophysics Data System (ADS)

    Macdonald, Katrina M.; Sharma, Sangeeta; Toom, Desiree; Chivulescu, Alina; Hanna, Sarah; Bertram, Allan K.; Platt, Andrew; Elsasser, Mike; Huang, Lin; Tarasick, David; Chellman, Nathan; McConnell, Joseph R.; Bozem, Heiko; Kunkel, Daniel; Duan Lei, Ying; Evans, Greg J.; Abbatt, Jonathan P. D.

    2017-05-01

    Rapidly rising temperatures and loss of snow and ice cover have demonstrated the unique vulnerability of the high Arctic to climate change. There are major uncertainties in modelling the chemical depositional and scavenging processes of Arctic snow. To that end, fresh snow samples collected on average every 4 days at Alert, Nunavut, from September 2014 to June 2015 were analyzed for black carbon, major ions, and metals, and their concentrations and fluxes were reported. Comparison with simultaneous measurements of atmospheric aerosol mass loadings yields effective deposition velocities that encompass all processes by which the atmospheric species are transferred to the snow. It is inferred from these values that dry deposition is the dominant removal mechanism for several compounds over the winter while wet deposition increased in importance in the fall and spring, possibly due to enhanced scavenging by mixed-phase clouds. Black carbon aerosol was the least efficiently deposited species to the snow.

  20. Deposition of electrochromic tungsten oxide thin films by plasma-enhanced chemical vapor deposition

    SciTech Connect

    Henley, W.B.; Sacks, G.J.

    1997-03-01

    Use of plasma-enhanced chemical vapor deposition (PECVD) for electrochromic WO{sub 3} film deposition is investigated. Oxygen, hydrogen, and tungsten hexafluoride were used as source gases. Reactant gas flow was investigated to determine the effect on film characteristics. High quality optical films were obtained at deposition rates on the order of 100 {angstrom}/s. Higher deposition rates were attainable but film quality and optical coherence degraded. Atomic emission spectroscopy (AES), was used to provide an in situ assessment of the plasma deposition chemistry. Through AES, it is shown that the hydrogen gas flow is essential to the deposition of the WO{sub 3} film. Oxygen gas flow and tungsten hexafluoride gas flow must be approximately equal for high quality films.

  1. Chemical vapor deposition reactor. [providing uniform film thickness

    NASA Technical Reports Server (NTRS)

    Chern, S. S.; Maserjian, J. (Inventor)

    1977-01-01

    An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials.

  2. Chemical vapor deposition modeling: An assessment of current status

    NASA Technical Reports Server (NTRS)

    Gokoglu, Suleyman A.

    1991-01-01

    The shortcomings of earlier approaches that assumed thermochemical equilibrium and used chemical vapor deposition (CVD) phase diagrams are pointed out. Significant advancements in predictive capabilities due to recent computational developments, especially those for deposition rates controlled by gas phase mass transport, are demonstrated. The importance of using the proper boundary conditions is stressed, and the availability and reliability of gas phase and surface chemical kinetic information are emphasized as the most limiting factors. Future directions for CVD are proposed on the basis of current needs for efficient and effective progress in CVD process design and optimization.

  3. Metalorganic chemical vapor deposition of iron disulfide and its use for solar energy conversion

    NASA Astrophysics Data System (ADS)

    Ennaoui, Ahmed; Fiechter, Sebastian; Vogel, Ralf; Giersig, M.; Weller, Horst; Tributsch, Helmut

    1992-12-01

    Thin polycrystalline films of iron disulfide have been grown on different substrates by chemical vapour deposition. The films were characterized using optical absorption and TEM. RBS and EDAX analysis has been used to explore the chemical stoichiometry. XRD and FTIR allowed the identification of both FeS2 phases pyrite and marcasite. A novel method for sensitization of highly porous Ti02 elecrodes with ultra thin (10-20 nm) polycrystalline films of FeS2 (pyrite) is presented. Photoelectrochemical solar cell using the above electrode generated high photovoltage of up to 600mV compared with single crystalline electrode (200 mV). In this device the semiconductor with a small band gap and high absorption coefficient (FeS2 pyrite; EG = 0.9 eV; a = 6 x 105 cm-1) absorbs the light and injects electrons into the conduction band the wide band gap semiconductor (Ti02 anatase; EG = 3.2 eV). Regeneration of holes is taking place by electron transfer from redox system in the electrolyte.

  4. Growth and properties of W-B-N diffusion barriers deposited by chemical vapor deposition

    SciTech Connect

    Fleming, J.G.; Roherty-Osmun, E.; Custer, J.; Smith, P.M.; Reid, J.S.; Nicolet, M.A.

    1995-10-01

    The authors have used chemical vapor deposition to grow ternary tungsten-based diffusion barriers to determine if they exhibit properties similar to those of sputter-deposited ternaries. A range of different W-B-N compositions in a band of compositions roughly between 20 and 40% W were produced. The deposition temperature was low, 350 C, and the precursors used are well accepted by the industry. Deposition rates are high for a diffusion barrier application. Resistivities range from 200 to 20,000 {micro}{Omega}-cm, the films with the best barrier properties having {approximately}1,000 {micro}{Omega}-cm resistivities. Adhesion to oxides is sufficient to allow these films to be used as the adhesion layer in a tungsten chemical mechanical polishing plug application. The films are x-ray amorphous as-deposited and have crystallization temperatures of up to 900 C. Barrier performance against Cu has been tested using diode test structures. A composition of W{sub .23}B{sub .49}N{sub .28} was able to prevent diode failure up to a 700 C, 30 minute anneal. These materials, deposited by CVD, display properties similar to those deposited by physical deposition techniques.

  5. Physical properties of vapour grown indium monotelluride platelets

    NASA Astrophysics Data System (ADS)

    Kunjomana, A. G.; Chandrasekharan, K. A.; Teena, M.

    2015-02-01

    Indium monotelluride (InTe) crystals were grown from vapour phase under different temperature gradients by employing physical vapour deposition (PVD) method. The morphology of these crystals such as whiskers, needles, platelets etc., strongly depends on the temperature distribution in the horizontal dual zone furnace. InTe platelets were deposited by setting the temperature of the charge (TC) and growth (TS) zones at 1073 K and 773 K (ΔT=300 K), respectively, for different growth periods (24 h, 48 h, 72 h and 96 h). The surface growth features have been analyzed by scanning electron microscopes, which indicate layer growth mechanism for all the crystals. Various crystals grown under ΔT=200 K and 300 K (retaining TS invariant) were examined by X-ray diffraction and elemental analysis. InTe samples exhibited consistent lattice parameters, density and atomic percentage, establishing stoichiometry and chemical homogeneity. The results obtained for Seebeck coefficient, electrical conductivity, power factor, dislocation density and microhardness are found to be reproducible as well. The vapour deposited InTe platelets are mechanically stable and possess high value of TEP, which ensure their practical application in thermoelectric power generation.

  6. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    ERIC Educational Resources Information Center

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  7. A novel induction heater for chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Ong, C. W.; Wong, H. K.; Sin, K. S.; Yip, S. T.; Chik, K. P.

    1989-06-01

    We report how an induction cooker for household use can be modified for heating substrate or heating gases to high temperature in a chemical vapor deposition system. Only minor changes of the cooker are necessary. Stable substrate temperature as high as 900 °C was achieved with input power of about 1150 W.

  8. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    ERIC Educational Resources Information Center

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  9. Ultrafine Microstructure Composites Prepared by Chemical Vapor Deposition

    DTIC Science & Technology

    1988-12-01

    deposition experiments reported in this paper, we performed numerous thermo- dynamic calculations using the SOLGASMIX - PV program [21]. In summary...Besmann, " SOLGASMIX - PV , A Computer Program to Calculate Equilibrium Relationships in Complex Chemical Systems," ORNL/TM-5775, Oak Ridge National

  10. Synthesis of mullite coatings by chemical vapor deposition

    SciTech Connect

    Mulpuri, R.P.; Sarin, V.K.

    1996-06-01

    Formation of mullite on ceramic substrates via chemical vapor deposition was investigated. Mullite is a solid solution of Al{sub 2}O{sub 3} and SiO{sub 2} with a composition of 3Al{sub 2}O{sub 3}{center_dot}2SiO{sub 2}. Thermodynamic calculations performed on the AlCl{sub 3}{endash}SiCl{sub 4}{endash}CO{sub 2}{endash}H{sub 2} system were used to construct equilibrium chemical vapor deposition (CVD) phase diagrams. With the aid of these diagrams and consideration of kinetic rate limiting factors, initial process parameters were determined. Through process optimization, crystalline CVD mullite coatings have been successfully grown on SiC and Si{sub 3}N{sub 4} substrates. Results from the thermodynamic analysis, process optimization, and effect of various process parameters on deposition rate and coating morphology are discussed. {copyright} {ital 1996 Materials Research Society.}

  11. Metal Organic-Chemical Vapor Deposition fabrication of semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Thomas, C.

    1980-08-01

    The metal organic chemical vapor deposition (MO-CVD) process was studied and implemented in detail. Single crystal GaAs, and Ga(x)Al(1-x)As films were grown on GaAs by depositing metal organic alkyl gallium compounds in the presence of an arsine mixture. The metal organic chemical vapor deposition process allowed formation of the semiconductor compound directly on the heated substrate in only one hot temperature zone. With MO-CVD, semiconductor films can be efficiently produced by a more economical, less complicated process which will lend itself more easily than past fabrication procedures, to high quantity, high quality reproduction techniques of semiconductor lasers. Clearly MO-CVD is of interest to the communication industry where semiconductor lasers are used extensively in fiber optic communication systems, and similarly to the solar energy business where GaAs substrates are used as photoelectric cells.

  12. Effect of deposition temperature on the chemical properties of thermally deposited silicon nitride films

    NASA Astrophysics Data System (ADS)

    Patil, L. S.; Pandey, R. K.; Bange, Jaspal P.; Gaikwad, S. A.; Gautam, D. K.

    2005-01-01

    Silicon nitride (Si 3N 4) films have been deposited by using dimethyl dichloro silane (DMDS) as a source of silicon and ammonia (NH 3) gas as a source of nitrogen at 760-860 °C deposition temperature by thermal-CVD system. An extensive analysis of the chemical properties of the films was carried out using Ellipsometry and Fourier Transform Infrared (FTIR) Spectroscopy measurements. The deposited silicon nitride films show the presence of hydrogen bonded to silicon and nitrogen. The relative number of Si-H, N-H, and Si-N bonds has been estimated and the Si-H, N-H and Si-N-Si stretching characteristic peaks of Si 3N 4 films have also been observed with significant intensities through FTIR spectroscopy as a function of deposition temperature. It has been found that films deposited in the temperature range of 760-860 °C, have some amount of hydrogen contents. The total hydrogen concentration in the films decreases with corresponding increase in deposition temperature, which reveals that the densification of deposited films increases on increasing the deposition temperature. The film properties including N-H/Si-H ratio, hydrogen content, and density of films are most sensitive to change in the deposition temperature.

  13. The use of electrophoretically deposited diamond powder coatings as a precursor for chemically vapor deposited diamond

    SciTech Connect

    Panitz, J.K.G.

    1991-12-31

    It has generally been observed that in order in expedite the formation of chemical vapor deposited (CVD) diamond coatings, it is desirable to prepare a substrate by ``seeding`` it with diamond powder. We have determined that thick, stress free, shaped, diamond powder coatings can be electrophoretically deposited in a relatively short amounts of time. These diamond powder precursor coatings are then densified in a hot filament assisted CVD reactor to produce good quality CVD diamond/diamond powder composites. This combination of deposition techniques avoids many potential problems associated with predominantly CVD diamond.

  14. Textured (100) yttria-stabilized zirconia thin films deposited by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Holzschuh, H.; Suhr, H.

    1991-07-01

    Thin films of yttria-stabilized zirconia were deposited by plasma-enhanced chemical vapor deposition on quartz Si(100), Si(111), Ni, and the steels V2A and Hastelloy at substrate temperatures (Ts): 673-873 K. The metal beta-diketonates Y (thd)3 and Zr(thd)4 were used as precursors. The fully stabilized fluorite-type cubic structure was obtained over a wide range of yttria contents from 3.5 to 80 mol pct (Ts = 773 K). The quality of the films depended on the match of the thermal expansion coefficients of substrate and deposit.

  15. Characterization of copper selenide thin films deposited by chemical bath deposition technique

    NASA Astrophysics Data System (ADS)

    Al-Mamun; Islam, A. B. M. O.

    2004-11-01

    A low-cost chemical bath deposition (CBD) technique has been used for the preparation of Cu2-xSe thin films onto glass substrates and deposited films were characterized by X-ray diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and UV-vis spectrophotometry. Good quality thin films of smooth surface of copper selenide thin films were deposited using sodium selenosulfate as a source of selenide ions. The structural and optical behaviour of the films are discussed in the light of the observed data.

  16. SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

    NASA Astrophysics Data System (ADS)

    Chaki, Sunil H.; Chaudhary, Mahesh D.; Deshpande, M. P.

    2016-05-01

    The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 °C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I-V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.

  17. Low-temperature deposition of crystalline silicon nitride nanoparticles by hot-wire chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Kim, Chan-Soo; Youn, Woong-Kyu; Lee, Dong-Kwon; Seol, Kwang-Soo; Hwang, Nong-Moon

    2009-07-01

    The nanocrystalline alpha silicon nitride (α-Si 3N 4) was deposited on a silicon substrate by hot-wire chemical vapor deposition at the substrate temperature of 700 °C under 4 and 40 Torr at the wire temperatures of 1430 and 1730 °C, with a gas mixture of SiH 4 and NH 3. The size and density of crystalline nanoparticles on the substrate increased with increasing wire temperature. With increasing reactor pressure, the crystallinity of α-Si 3N 4 nanoparticles increased, but the deposition rate decreased.

  18. Low temperature deposition of inorganic films by excimer laser assisted chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Kuk, Seungkuk; Park, Jongmin; Zhang, Tao; Hwang, David J.

    2017-02-01

    In this study, silicon nitride film is deposited by laser assisted chemical vapor deposition technique based on the direct photolysis of SiH4/NH3 gas mixture using argon fluoride excimer laser of 193 nm wavelength at low substrate temperature around 100°C. By illuminating laser beam in parallel to sample surface, sample damage or heating can be avoided allowing compatibility of temperature sensitive device architectures. A wide range of processing parameters for laser and reactant gases are examined in correlation with deposition mechanisms.

  19. Modified chemical route for deposition of molybdenum disulphide thin films

    SciTech Connect

    Vyas, Akshay N. Sartale, S. D.

    2014-04-24

    Molybdenum disulphide (MoS{sub 2}) thin films were deposited on quartz substrates using a modified chemical route. Sodium molybdate and sodium sulphide were used as precursors for molybdenum and sulphur respectively. The route involves formation of tetrathiomolybdate ions (MoS{sub 4}{sup 2−}) and further reduction by sodium borohydride to form MoS{sub 2}. The deposition was performed at room temperature. The deposited films were annealed in argon atmosphere at 1073 K for 1 hour to improve its crystallinity. The deposited films were characterized using scanning electron microscopy (SEM) for morphology, UV-Vis absorption spectroscopy for optical studies and X-ray diffraction (XRD) for structure determination.

  20. Chemical vapor deposition and atomic layer deposition of metal oxide and nitride thin films

    NASA Astrophysics Data System (ADS)

    Barton, Jeffrey Thomas

    Processes for depositing thin films with various electronic, optical, mechanical, and chemical properties are indispensable in many industries today. Of the many deposition methods available, chemical vapor deposition (CVD) has proved over time to be one of the most flexible, efficient, and cost-effective. Atomic layer deposition (ALD) is a newer process that is gaining favor as a method for depositing films with excellent properties and unparalleled precision. This work describes the development of novel CVD and ALD processes to deposit a variety of materials. Hafnium oxide and zirconium oxide show promise as replacements for SiO 2 as gate dielectrics in future-generation transistors. These high-k materials would provide sufficient capacitance with layers thick enough to avoid leakage from tunneling. An ALD method is presented here for depositing conformal hafnium oxide from tetrakis-(diethylamido)hafnium and oxygen gas. A CVD method for depositing zirconium oxide from tetrakis-(dialkylamido)zirconium and either oxygen gas or water vapor is also described. The use of copper for interconnects in integrated circuits requires improved diffusion barrier materials, given its high diffusivity compared to the previously-used aluminum and tungsten. Tungsten nitride has a low resistivity among barrier materials, and can be deposited in amorphous films that are effective diffusion barriers in layers as thin as a few nanometers. Here we demonstrate CVD and plasma-enhanced CVD methods to deposit tungsten nitride films from bis-(dialkylamido)bis-( tert-butylimido)tungsten precursors and ammonia gas. Recent findings had shown uniform copper growth on tantalum silicate films, without the dewetting that usually occurs on oxide surfaces. Tantalum and tungsten silicates were deposited by a CVD reaction from the reaction of either tris-(diethylamido)ethylimido tantalum or bis-(ethylmethylamido)-bis-( tert-butylimido)tungsten with tris-(tert-butoxy)silanol. The ability of evaporated

  1. Transport mechanisms through PE-CVD coatings: influence of temperature, coating properties and defects on permeation of water vapour

    NASA Astrophysics Data System (ADS)

    Kirchheim, Dennis; Jaritz, Montgomery; Mitschker, Felix; Gebhard, Maximilian; Brochhagen, Markus; Hopmann, Christian; Böke, Marc; Devi, Anjana; Awakowicz, Peter; Dahlmann, Rainer

    2017-03-01

    Gas transport mechanisms through plastics are usually described by the temperature-dependent Arrhenius-model and compositions of several plastic layers are represented by the CLT. When it comes to thin films such as plasma-enhanced chemical vapour deposition (PE-CVD) or plasma-enhanced atomic layer deposition (PE-ALD) coatings on substrates of polymeric material, a universal model is lacking. While existing models describe diffusion through defects, these models presume that permeation does not occur by other means of transport mechanisms. This paper correlates the existing transport models with data from water vapour transmission experiments.

  2. Chemically Deposited Thin-Film Solar Cell Materials

    NASA Technical Reports Server (NTRS)

    Raffaelle, R.; Junek, W.; Gorse, J.; Thompson, T.; Harris, J.; Hehemann, D.; Hepp, A.; Rybicki, G.

    2005-01-01

    We have been working on the development of thin film photovoltaic solar cell materials that can be produced entirely by wet chemical methods on low-cost flexible substrates. P-type copper indium diselenide (CIS) absorber layers have been deposited via electrochemical deposition. Similar techniques have also allowed us to incorporate both Ga and S into the CIS structure, in order to increase its optical bandgap. The ability to deposit similar absorber layers with a variety of bandgaps is essential to our efforts to develop a multi-junction thin-film solar cell. Chemical bath deposition methods were used to deposit a cadmium sulfide (CdS) buffer layers on our CIS-based absorber layers. Window contacts were made to these CdS/CIS junctions by the electrodeposition of zinc oxide (ZnO). Structural and elemental determinations of the individual ZnO, CdS and CIS-based films via transmission spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy and energy dispersive spectroscopy will be presented. The electrical characterization of the resulting devices will be discussed.

  3. Investigation of diamond deposition by chemical vapor transport with hydrogen

    NASA Astrophysics Data System (ADS)

    Piekarczyk, Wladyslaw; Messier, Russell F.; Roy, Rustum; Engdahl, Chris

    1990-12-01

    The carbon-hydrogen chemical vapor transport system was examined in accordance with a four-stage transport model. A result of this examination is that graphite co-deposition could be avoided when diamond is deposited from gas solutions under-saturated with respect to diamond. Actual deposition experiments showed that this unusual requirement can be fulfilled but only for the condition that the transport distance between the carbon source and the substrate surface is short. In such a case diamond can be deposited equally from super-saturated as well as from under-saturated gas solutions. On the basis of thermodynamic considerations a possible explanation of this unusual phenomenon is given. It is shown that there is a possibility of deposition of diamond from both super-saturated as well as under-saturated gas solutions but only on the condition that they are in a non-equilibrium state generally called the activated state. A model of the diamond deposition process consisting of two steps is proposed. In the first step diamond and graphite are deposited simultaneously. The most important carbon deposition reaction is C2H2(g) + 2 H(g) C(diamond graphite) + CH(g). The amount of co-deposited graphite is not a direct function of the saturation state of the gas phase. In the second step graphite is etched according to the most probable reaction C(graphite) + 4 H(g) CH4(g). Atomic hydrogen in a super-equilibrium concentration is necessary not only to etch graphite but also to precipitate and graphite. 1.

  4. Combustion chemical vapor deposited coatings for thermal barrier coating systems

    SciTech Connect

    Hampikian, J.M.; Carter, W.B.

    1995-12-31

    The new deposition process, combustion chemical vapor deposition, shows a great deal of promise in the area of thermal barrier coating systems. This technique produces dense, adherent coatings, and does not require a reaction chamber. Coatings can therefore be applied in the open atmosphere. The process is potentially suitable for producing high quality CVD coatings for use as interlayers between the bond coat and thermal barrier coating, and/or as overlayers, on top of thermal barrier coatings. In this report, the evaluation of alumina and ceria coatings on a nickel-chromium alloy is described.

  5. Silicon nanocrystals prepared by plasma enhanced chemical vapor deposition: Importance of parasitic oxidation for third generation photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Hartel, A. M.; Gutsch, S.; Hiller, D.; Kübel, C.; Zakharov, N.; Werner, P.; Zacharias, M.

    2012-11-01

    We report on an in-situ oxidation effect during annealing of SiO2/SiO1.0N0.23 multilayers prepared by plasma enhanced chemical vapour deposition (PECVD). This in-situ oxidation leads to an undesired growth of the tunneling oxide and also affects the silicon nanocrystal (SiNC) size control, i.e., a NC shrinkage. The origin of this oxidation is identified to be a "quasi-wet" oxidation by O-H groups incorporated in the PECVD-SiO2 barrier layers. By varying the thickness of the PECVD-SiO2 layer underneath a single SiO1.0N0.23 layer, the extent of NC oxidation is tuned. The shrinkage of SiNCs is proven by a blueshift of the photoluminescence peak position as well as by transmission electron microscopy.

  6. Optical Properties of Novel GaN 3D Structures Grown by Metal-Organic Chemical Vapor Deposition (MOCVD)

    NASA Astrophysics Data System (ADS)

    Sacilotti, Marco; Imhoff, Luc; Dumas, Colette; Viste, Pierre; Vial, Jean-Claude; Baldeck, Patrice; Colombier, Isabelle; Donatini, Fabrice

    2004-06-01

    Optical properties of novel micrometer-size Ga and GaN three-dimensional structures obtained by the metal-organic chemical vapour deposition (MOCVD) technique are presented in this letter. These structures are obtained as metallic three dimensions (3D) micrometer-size objects on an appropriate substrate by metalorganic (TMGa) pyrolisis and then GaN transformed on annealing under NH3 atmosphere at 650-750°C. These 3D GaN structures are analysed by optical means, using two-photon excitation (800 nm) and by UV Hg lamp fluorescent spectroscopy techniques, adapted to two-optical-microscopes apparatus. Very intense and blue/yellow light emission is observed from these 3D structures under 800 nm two-photon laser excitation and under UV Hg lamp excitation.

  7. Chemical etching of copper foils for single-layer graphene growth by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Yoshihara, Naoki; Noda, Masaru

    2017-10-01

    Chemical etching on copper surface is essential as a pre-treatment for single-layer graphene growth by chemical vapor deposition (CVD). Here, we investigated the effect of chemical etching treatment on copper foils for single-layer graphene CVD growth. The chemical etching conditions, such as the type of chemical etchants and the treatment time, were found to strongly influence the graphene domain size. Moreover, a drastic change in the layer structure of graphene sheets, which was attributed to the surface morphology of the etched copper foil, was confirmed by graphene transmittance and Raman mapping measurements.

  8. Chemical vapor deposition and characterization of tungsten boron alloy films

    SciTech Connect

    Smith, P.M.; Fleming, J.G.; Lujan, R.D.; Roherty-Osmun, E.; Reid, J.S.; Hochberg, A.K.; Roberts, D.A.

    1993-11-01

    A low pressure chemical vapor deposition (LPCVD) process for depositing W{sub X}B{sub (1-X)} films from WF{sub 6} and B{sub 2}H{sub 6} is described. The depositions were performed in a cold wall reactor on 6 in. Si wafers at 400C. During deposition, pressure was maintained at a fixed level in the range of 200 to 260 mTorr. Ratio of WF{sub 6}/B{sub 2}H{sub 6} was varied from 0.05 to 1.07. Carrier gas was either 100 sccm of Ar with a gas flow of 308 to 591 sccm, or 2000 sccm of Ar and 2000 sccm of H{sub 2} with the overall gas flow from 4213 to 4452 sccm. Two stable deposition regions were found separated by an unstable region that produced non-uniform films. The B-rich films produced in one of the stable deposition regions had W concentrations of 30 at.% and resistivities between 200 and 300 {mu}ohm{center_dot}cm. The W-rich films produced in the other stable deposition region had W concentrations of 80 at.% and resistivities of 100 {mu}ohm{center_dot}cm. As-deposited films had densities similar to bulk material of similar stoichiometry. Barrier properties of the films against diffusion of Cu to 700C in vacuum were measured by 4-point probe. Also, annealing was carried out to 900C in order to determine phases formed as the films crystallize. These studies indicate that W{sub X}B{sub (1-X)} films may be useful barriers in ULSI metallization applications.

  9. Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Li, Dong-ling; Feng, Xiao-fei; Wen, Zhi-yu; Shang, Zheng-guo; She, Yin

    2016-07-01

    Stress controllable silicon nitride (SiNx) films deposited by plasma enhanced chemical vapor deposition (PECVD) are reported. Low stress SiNx films were deposited in both high frequency (HF) mode and dual frequency (HF/LF) mode. By optimizing process parameters, stress free (-0.27 MPa) SiNx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited SiNx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit (IC), micro-electro-mechanical systems (MEMS) and bio-MEMS.

  10. Optimization of chemical bath deposited cadmium sulfide thin films

    SciTech Connect

    Oladeji, I.O.; Chow, L.

    1997-07-01

    Cadmium sulfide (CdS) is known to be an excellent heterojunction partner of p-type cadmium telluride (CdTe) or p-type copper indium diselenide (CuInSe{sub 2}) due essentially to its high electron affinity. It is widely used as a window material in high efficiency thin-film solar cells based on CdTe or CuInSe{sub 2} owing to its transparency and photoconductivity among other properties. The authors report the optimization of CdS thin film grown by chemical bath deposition where homogeneous reactions are minimized. The optimum parameters have enabled them to maximize the thickness of the deposited film in a single dip and to grow thicker films by periodically replenishing the concentration of reactants while the substrate remains continuously dipped in the reaction bath. Characterization results reveal the deposited CdS films exhibit improved optical and electrical properties.

  11. Development and study of chemical vapor deposited tantalum base alloys

    NASA Technical Reports Server (NTRS)

    Meier, G. H.; Bryant, W. A.

    1976-01-01

    A technique for the chemical vapor deposition of alloys was developed. The process, termed pulsing, involves the periodic injection of reactant gases into a previously-evacuated reaction chamber where they blanket the substrate almost instantaneously. Formation of alternating layers of the alloy components and subsequent homogenization allows the formation of an alloy of uniform composition with the composition being determined by the duration and relative numbers of the various cycles. The technique has been utilized to produce dense alloys of uniform thickness and composition (Ta- 10 wt % W) by depositing alternating layers of Ta and W by the hydrogen reduction of TaCl5 and WCl6. A similar attempt to deposit a Ta - 8 wt % W - 2 wt% Hf alloy was unsuccessful because of the difficulty in reducing HfCl4 at temperatures below those at which gas phase nucleation of Ta and W occurred.

  12. CHEMICAL SOLUTION DEPOSITION BASED OXIDE BUFFERS AND YBCO COATED CONDUCTORS

    SciTech Connect

    Paranthaman, Mariappan Parans

    2011-01-01

    We have reviewed briefly the growth of buffer and high temperature superconducting oxide thin films using a chemical solution deposition (CSD) method. In the Rolling-Assisted Biaxially Textured Substrates (RABiTS) process, developed at Oak Ridge National Laboratory, utilizes the thermo mechanical processing to obtain the flexible, biaxially oriented copper, nickel or nickel-alloy substrates. Buffers and Rare Earth Barium Copper Oxide (REBCO) superconductors have been deposited epitaxially on the textured nickel alloy substrates. The starting substrate serves as a template for the REBCO layer, which has substantially fewer weak links. Buffer layers play a major role in fabricating the second generation REBCO wire technology. The main purpose of the buffer layers is to provide a smooth, continuous and chemically inert surface for the growth of the REBCO film, while transferring the texture from the substrate to the superconductor layer. To achieve this, the buffer layers need to be epitaxial to the substrate, i.e. they have to nucleate and grow in the same bi-axial texture provided by the textured metal foil. The most commonly used RABiTS multi-layer architectures consist of a starting template of biaxially textured Ni-5 at.% W (Ni-W) substrate with a seed (first) layer of Yttrium Oxide (Y2O3), a barrier (second) layer of Yttria Stabilized Zirconia (YSZ), and a Cerium Oxide (CeO2) cap (third) layer. These three buffer layers are generally deposited using physical vapor deposition (PVD) techniques such as reactive sputtering. On top of the PVD template, REBCO film is then grown by a chemical solution deposition. This article reviews in detail about the list of oxide buffers and superconductor REBCO films grown epitaxially on single crystal and/or biaxially textured Ni-W substrates using a CSD method.

  13. Oxidative chemical vapor deposition of polyaniline thin films.

    PubMed

    Smolin, Yuriy Y; Soroush, Masoud; Lau, Kenneth K S

    2017-01-01

    Polyaniline (PANI) is synthesized via oxidative chemical vapor deposition (oCVD) using aniline as monomer and antimony pentachloride as oxidant. Microscopy and spectroscopy indicate that oCVD processing conditions influence the PANI film chemistry, oxidation, and doping level. Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS) indicate that a substrate temperature of 90 °C is needed to minimize the formation of oligomers during polymerization. Lower substrate temperatures, such as 25 °C, lead to a film that mostly includes oligomers. Increasing the oxidant flowrate to nearly match the monomer flowrate favors the deposition of PANI in the emeraldine state, and varying the oxidant flowrate can directly influence the oxidation state of PANI. Changing the reactor pressure from 700 to 35 mTorr does not have a significant effect on the deposited film chemistry, indicating that the oCVD PANI process is not concentration dependent. This work shows that oCVD can be used for depositing PANI and for effectively controlling the chemical state of PANI.

  14. Laser Induced Chemical Vapor Deposition of Gallium Arsenide Films.

    DTIC Science & Technology

    1987-08-20

    be grown. The VPE processes can be subdivided into (a) the chloride and (b) the metalorganic chemical vapor deposition (MOCVD) processes. The... chloride VPE processes, utilizing 1= AsCl 3 -Ga-H 2 or HC1-Ga-AsH3 . are capable of producing epitazial layers with low carrier concentrations and high...electron mobilities. However. the chloride systems have not been successful for the growth of aluminum- containing III-V alloys because of the reactivity

  15. Processing Research on Chemically Vapor Deposited Silicon Nitride.

    DTIC Science & Technology

    1979-12-01

    the feasi- bility of synthesizing free-standing plate and figured geometries of phase-pure silicon nitride by the chemical vapor deposition (CVD) method...ates toward moisture and the probability that they all contain absorbed ammonium chloride and ammonia. A strong ammoniacal odor indicates that...solid (V- L -S) processes favored by high ammonia/silicon ratios, high concentrations and long times. Whisker formation would be favored by the opposite

  16. Chemical vapor deposition coating of fibers using microwave application

    NASA Technical Reports Server (NTRS)

    Barmatz, Martin B. (Inventor); Hoover, Gordon (Inventor); Jackson, Henry W. (Inventor)

    2000-01-01

    Chemical vapor deposition coating is carried out in a cylindrical cavity. The fibers are heated by a microwave source that is uses a TM0N0 mode, where O is an integer, and produces a field that depends substantially only on radius. The fibers are observed to determine their heating, and their position can be adjusted. Once the fibers are uniformly heated, a CVD reagent is added to process the fibers.

  17. Extraordinary magnetoresistance in shunted chemical vapor deposition grown graphene devices

    DTIC Science & Technology

    2011-07-01

    than 95% single-layer gra- phene using chemical vapor deposition (CVD) on copper foils.12 These large-area films are transferable to any arbi- trary...graphene will reconcile with the need for higher mobility, as mobility coupled the cleanliness and defectiveness of the graphene. Nonetheless, such devices...Wiesendagner, Science 320, 82 (2008). 21A. L. Friedman, H. Chun, Y. J. Jung, D. Heiman, E. R. Glaser , and L. Menon, Phys. Rev. B 81, 115461 (2010). FIG. 3

  18. Research on chemical vapor deposition processes for advanced ceramic coatings

    NASA Technical Reports Server (NTRS)

    Rosner, Daniel E.

    1993-01-01

    Our interdisciplinary background and fundamentally-oriented studies of the laws governing multi-component chemical vapor deposition (VD), particle deposition (PD), and their interactions, put the Yale University HTCRE Laboratory in a unique position to significantly advance the 'state-of-the-art' of chemical vapor deposition (CVD) R&D. With NASA-Lewis RC financial support, we initiated a program in March of 1988 that has led to the advances described in this report (Section 2) in predicting chemical vapor transport in high temperature systems relevant to the fabrication of refractory ceramic coatings for turbine engine components. This Final Report covers our principal results and activities for the total NASA grant of $190,000. over the 4.67 year period: 1 March 1988-1 November 1992. Since our methods and the technical details are contained in the publications listed (9 Abstracts are given as Appendices) our emphasis here is on broad conclusions/implications and administrative data, including personnel, talks, interactions with industry, and some known applications of our work.

  19. Evaluation of water vapour assimilation in the tropical upper troposphere and lower stratosphere by a chemical transport model

    NASA Astrophysics Data System (ADS)

    Payra, Swagata; Ricaud, Philippe; Abida, Rachid; El Amraoui, Laaziz; Attié, Jean-Luc; Rivière, Emmanuel; Carminati, Fabien; von Clarmann, Thomas

    2016-09-01

    The present analysis deals with one of the most debated aspects of the studies on the upper troposphere/lower stratosphere (UTLS), namely the budget of water vapour (H2O) at the tropical tropopause. Within the French project "Multiscale water budget in the upper troposphere and lower stratosphere in the TROpics" (TRO-pico), a global-scale analysis has been set up based on space-borne observations, models and assimilation techniques. The MOCAGE-VALENTINA assimilation tool has been used to assimilate the Aura Microwave Limb Sounder (MLS) version 3.3 H2O measurements within the 316-5 hPa range from August 2011 to March 2013 with an assimilation window of 1 h. Diagnostics based on observations minus analysis and forecast are developed to assess the quality of the assimilated H2O fields. Comparison with an independent source of H2O measurements in the UTLS based on the space-borne Michelson Interferometer for Passive Atmospheric Sounding (MIPAS) observations and with meteorological ARPEGE analyses is also shown. Sensitivity studies of the analysed fields have been performed by (1) considering periods when no MLS measurements are available and (2) using H2O data from another MLS version (4.2). The studies have been performed within three different spaces in time and space coincidences with MLS (hereafter referred to as MLS space) and MIPAS (MIPAS space) observations and with the model (model space) outputs and at three different levels: 121 hPa (upper troposphere), 100 hPa (tropopause) and 68 hPa (lower stratosphere) in January and February 2012. In the MLS space, the analyses behave consistently with the MLS observations from the upper troposphere to the lower stratosphere. In the model space, the analyses are wetter than the reference atmosphere as represented by ARPEGE and MLS in the upper troposphere (121 hPa) and around the tropopause (100 hPa), but are consistent with MLS and MIPAS in the lower stratosphere (68 hPa). In the MIPAS space, the sensitivity and the

  20. A high temperature, plasma-assisted chemical vapor deposition system

    SciTech Connect

    Brusasco, R.M.; Britten, J.A.; Thorsness, C.B.; Scrivener, M.S.; Unites, W.G.; Campbell, J.H. ); Johnson, W.L. )

    1990-02-01

    We have designed and built a high-temperature, plasma-assisted, chemical vapor deposition system to deposit multilayer optical coatings of SiO{sub 2} and doped-SiO{sub 2} flat substrates. The coater concept and design is an outgrowth of our recent work with Schott Glasswerke demonstrating the use of plasma assisted CVD to prepare very high damage threshold optical coatings. The coater is designed to deposit up to several thousand alternating quarterwave layers of SiO{sub 2} and doped SiO{sub 2} substrate at deposition rates up to several microns per minute. The substrate is resistively heated to about 1000{degree}C during the deposition phase of the process. The plasma is driven by a 13.56 MHz RF unit capable of producing power densities of up to 140 W cm{sup {minus}3} in the reaction zone. The coater is designed to be adaptable to microwave generated plasmas, as well as RF. Reactant gas flow rates of up to 10 slm can be achieved at a 10 tar operating pressure. Reactants consist of O{sub 2}, SiCl{sub 4} and a volatile halogenated dopant. These gases react in the plasma volume producing SiO{sub 2} with dopant concentrations of up to a few percent. A variable dopant concentration is used to produce index differences between adjacent optical layers.

  1. Deposition of CdS thin films by chemical bath and photochemical deposition methods and its characterization

    NASA Astrophysics Data System (ADS)

    Kumar, V. Nirmal; Suriakarthick, R.; Shyju, T. S.; Gopalakrishnan, R.

    2013-06-01

    Cadmium sulfide nanocrystalline thin films were deposited by chemical bath and photochemical methods and their properties were studied. Cadmium sulfide thin films were deposited from aqueous solution, which contains cadmium sulfate pentahydrade and thiourea for chemical bath deposition and ammonia was used as a complexing agent, whereas in the photochemical deposition, the solution contains cadmium sulfate and sodium thiosulfate in appropriate concentration and CdS was deposited. The properties of the deposited Cadmium sulfide thin films were analyzed by XRD, SEM with EDX and Photoluminescence.

  2. A novel approach to grow ZnO nanowires and nanoholes by combined colloidal lithography and MOCVD deposition.

    PubMed

    Fragalà, Maria Elena; Satriano, Cristina; Malandrino, Graziella

    2009-02-21

    A hybrid approach of colloidal lithography and metalorganic chemical vapour deposition (MOCVD) has been used to fabricate ZnO nanowire bundles and nanoholes by using a silver metalorganic precursor as the growth catalyst.

  3. Deposition of silicon nitride films using chemical vapor deposition for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Jhansirani, K.; Dubey, R. S.; More, M. A.; Singh, Shyam

    Silicon nitride is a versatile material since many decades due to its compatibility with conventional fabrication technology. Other than its potential applications in microelectronics, this material has been regarded as an antireflection coating in solar cells. In this paper, we present the fabrication and characterization of silicon nitride (Si3N4) films deposited at 750, 800 and 850 °C using atmospheric chemical vapor deposition. We have investigated the effect of deposition temperature on the physical and optical properties of the prepared films. The refractive index and film thickness were found to be increased in accordance with an increase in the deposition temperature. Fourier transform infrared (FTIR) spectroscopy analysis showed the Si-N-Si stretching peak at 917 cm-1 further, the full width at half maxima and Si-N-Si peak position showed their dependency on the deposition temperature. Finally, the optimal reflectance was observed through Si3N4 film deposited at temperature 800 °C which confirms its suitability as an antireflection coating.

  4. Chemical etching and organometallic chemical vapor deposition on varied geometries of GaAs

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila G.; Landis, Geoffrey A.; Wilt, David M.

    1989-01-01

    Results of micron-spaced geometries produced by wet chemical etching and subsequent OMCVD growth on various GaAs surfaces are presented. The polar lattice increases the complexity of the process. The slow-etch planes defined by anisotropic etching are not always the same as the growth facets produced during MOCVD deposition, especially for deposition on higher-order planes produced by the hex groove etching.

  5. Modeling of InP metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Black, Linda R.; Clark, Ivan O.; Kui, J.; Jesser, William A.

    1991-01-01

    The growth of InP by metalorganic chemical vapor deposition (MOCVD) in a horizontal reactor is being modeled with a commercially available computational fluid dynamics modeling code. The mathematical treatment of the MOCVD process has four primary areas of concern: 1) transport phenomena, 2) chemistry, 3) boundary conditions, and 4) numerical solution methods. The transport processes involved in CVD are described by conservation of total mass, momentum, energy, and atomic species. Momentum conservation is described by a generalized form of the Navier-Stokes equation for a Newtonian fluid and laminar flow. The effect of Soret diffusion on the transport of particular chemical species and on the predicted deposition rate is examined. Both gas-phase and surface chemical reactions are employed in the model. Boundary conditions are specified at the inlet and walls of the reactor for temperature, fluid flow and chemical species. The coupled set of equations described above is solved by a finite difference method over a nonuniform rectilinear grid in both two and three dimensions. The results of the 2-D computational model is presented for gravity levels of zero- and one-g. The predicted growth rates at one-g are compared to measured growth rates on fused silica substrates.

  6. Modeling of InP metalorganic chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Black, Linda R.; Clark, Ivan O.; Kui, J.; Jesser, William A.

    1991-01-01

    The growth of InP by metalorganic chemical vapor deposition (MOCVD) in a horizontal reactor is being modeled with a commercially available computational fluid dynamics modeling code. The mathematical treatment of the MOCVD process has four primary areas of concern: 1) transport phenomena, 2) chemistry, 3) boundary conditions, and 4) numerical solution methods. The transport processes involved in CVD are described by conservation of total mass, momentum, energy, and atomic species. Momentum conservation is described by a generalized form of the Navier-Stokes equation for a Newtonian fluid and laminar flow. The effect of Soret diffusion on the transport of particular chemical species and on the predicted deposition rate is examined. Both gas-phase and surface chemical reactions are employed in the model. Boundary conditions are specified at the inlet and walls of the reactor for temperature, fluid flow and chemical species. The coupled set of equations described above is solved by a finite difference method over a nonuniform rectilinear grid in both two and three dimensions. The results of the 2-D computational model is presented for gravity levels of zero- and one-g. The predicted growth rates at one-g are compared to measured growth rates on fused silica substrates.

  7. Chemical vapor deposition modeling for high temperature materials

    NASA Technical Reports Server (NTRS)

    Goekoglu, Sueleyman

    1992-01-01

    The formalism for the accurate modeling of chemical vapor deposition (CVD) processes has matured based on the well established principles of transport phenomena and chemical kinetics in the gas phase and on surfaces. The utility and limitations of such models are discussed in practical applications for high temperature structural materials. Attention is drawn to the complexities and uncertainties in chemical kinetics. Traditional approaches based on only equilibrium thermochemistry and/or transport phenomena are defended as useful tools, within their validity, for engineering purposes. The role of modeling is discussed within the context of establishing the link between CVD process parameters and material microstructures/properties. It is argued that CVD modeling is an essential part of designing CVD equipment and controlling/optimizing CVD processes for the production and/or coating of high performance structural materials.

  8. Short review on chemical bath deposition of thin film and characterization

    NASA Astrophysics Data System (ADS)

    Mugle, Dhananjay; Jadhav, Ghanshyam

    2016-05-01

    This reviews the theory of early growth of the thin film using chemical deposition methods. In particular, it critically reviews the chemical bath deposition (CBD) method for preparation of thin films. The different techniques used for characterizations of the chemically films such as X-ray diffractometer (XRD), Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), Electrical conductivity and Energy Dispersive Spectroscopy (EDS) are discussed. Survey shows the physical and chemical properties solely depend upon the time of deposition, temperature of deposition.

  9. Short review on chemical bath deposition of thin film and characterization

    SciTech Connect

    Mugle, Dhananjay Jadhav, Ghanshyam

    2016-05-06

    This reviews the theory of early growth of the thin film using chemical deposition methods. In particular, it critically reviews the chemical bath deposition (CBD) method for preparation of thin films. The different techniques used for characterizations of the chemically films such as X-ray diffractometer (XRD), Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), Electrical conductivity and Energy Dispersive Spectroscopy (EDS) are discussed. Survey shows the physical and chemical properties solely depend upon the time of deposition, temperature of deposition.

  10. Chemical vapor deposition of magnetic oxide semiconductors for spintronic applications

    NASA Astrophysics Data System (ADS)

    Falco, Lucas

    2005-11-01

    Moore's law, which states that the number of transistor's per square inch on integrated circuits doubles every 18 months, has set the pace of progress for the electronics industry since the 1970's. This in turn has led to a significant reduction in the cost of computers and communications devices. However, because of quantum mechanic effects, a limit in the miniaturization of devices is rapidly approaching where any further reduction in size may hinder their operation. Taking advantage of the electron spin, a quantum effect, and integrating it with electronics design, a new field is emerging, known as spintronics. In this respect, a very active area of research is in dilute magnetic semiconductors (DMS). In this work the author examines the use of chemical vapor deposition (CVD) as a method for the preparation of magnetic oxide semiconductors for spintronic applications. CVD has been used extensively as an efficient and inexpensive method to deposit magnetic and semiconducting thin films. The author examined the chemical, structural, and morphological properties of hematite (alpha-Fe2O3) thin films prepared by plasma enhanced chemical vapor deposition (PECVD) on silicon oxide (SiO2) substrates. Using X-ray diffraction (XRD) it was determined that the films contain a alpha-Fe2O3 phase. The author also studied the deposition of SnO2 by atomic layer deposition (ALD) and CVD. The effect of SnI4 pulse time was analyzed and it was determined that ALD growth was achieved after an 8 second pulse time. Ultimately, the preparation of cobalt oxide and Co-doped SnO2 films was the objective of this work. After several cobalt precursors were tried, the author found a suitable precursor, cobalt (II) acetylacetonate, to grow cobalt oxide and Co-doped SnO2 films. Sn1-XCO XO2+delta films were epitaxial for Co at% < 1 and indicated ferromagnetism on both SiO2 and sapphire substrate. In general, it was observed that higher magnetic moments were found for samples with lower cobalt

  11. Crystalline ha coating on peek via chemical deposition

    NASA Astrophysics Data System (ADS)

    Almasi, D.; Izman, S.; Assadian, M.; Ghanbari, M.; Abdul Kadir, M. R.

    2014-09-01

    Polyether ether ketone (PEEK) has a similar elastic modulus to bone and can be a suitable alternative to metallic implants. However, PEEK is bioinert and does not integrate well with the surrounding tissues. The current commercial method for solving this problem is by coating PEEK substrates with calcium phosphates via plasma spraying. However, this method produces a low bonding strength between the substrate and the coating layer, as well as non-uniform density of the coating. In this study, chemical deposition was used to deposit HA crystalline particles on PEEK substrate without any subsequent crystallisation process therefore producing crystalline treated layer. EDX results confirmed the deposition of HA, and the XRD results confirmed that the treated layer was crystalline HA. FT-IR analysis confirmed the chemical bonding between HA and the substrate. Surface roughness increased from 24.27 nm to 34.08 nm for 3 min immersion time. The water contact angle showed an increase in wettability of the treated sample from 71.6 to 36.4 degrees, which in turn increased its bioactivity. The proposed method is a suitable alternative to other conventional methods as high temperature was not involved in the process which could damage the surface of the substrate.

  12. Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

    PubMed

    Papadimitropoulos, G; Davazoglou, D

    2011-09-01

    In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage.

  13. Finite Element Analysis Modeling of Chemical Vapor Deposition of Silicon Carbide

    DTIC Science & Technology

    2014-06-19

    Conference on Computational Fluid Dynamics . 6. de Jong, F. & M. Meyyappan. (1996). Numerical Simulation of Silicon Carbide Chemical Vapor Deposition...FINITE ELEMENT ANALYSIS MODELING OF CHEMICAL VAPOR DEPOSITION OF SILICON CARBIDE !! THESIS JUNE 2014 ! Brandon M. Allen...T-14-J-38 ! ! FINITE ELEMENT ANALYSIS MODELING OF CHEMICAL VAPOR DEPOSITION OF SILICON CARBIDE !! THESIS Presented to the Faculty Department of

  14. Aerosol chemical vapor deposition of metal oxide films

    DOEpatents

    Ott, Kevin C.; Kodas, Toivo T.

    1994-01-01

    A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said FIELD OF THE INVENTION The present invention relates to the field of film coating deposition techniques, and more particularly to the deposition of multicomponent metal oxide films by aerosol chemical vapor deposition. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

  15. CdSe nanowires grown by using chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Gubur, H. Metin; Septekin, F.; Alpdogan, S.

    2015-10-01

    The Cadmium-selenide (CdSe) nanowire thin films were prepared on glass substrates by using chemical bath deposition (CBD) at 70 °C. Cadmium sulfate and sodium selenosulphate were used as Cd2+ and Se2- ion sources, respectively. The CdSe nanowire film was annealed in an air atmosphere at 573 K for 1 hour. X-ray diffraction (XRD) results showed that the nanowire films as-deposited and annealed had mixed cubic and hexagonal phase. Scanning electron microscopy (SEM) indicated that the CdSe nanowires had lengths ranging from 642 nm to 2.5 μm and diameters ranging from 46 nm to 211 nm. The optical properties of the as-deposited and the annealed nanowire films, an investigated by recording the transmission spectra by using an UV-visible spectrophotometer revealed that the energy band gap decreased (from 1.78 eV to 1.50 eV) upon annealing. The conductivity measurements made by using four-probe methods for both the annealed and the as-deposited films showed that the resistivity, conductivity and activation energy changed upon annealing.

  16. Effect of gas flow rates on the anatase-rutile transformation temperature of nanocrystalline TiO2 synthesised by chemical vapour synthesis.

    PubMed

    Ahmad, Md Imteyaz; Bhattacharya, S S; Fasel, Claudia; Hahn, Horst

    2009-09-01

    Of the three crystallographic allotropes of nanocrystalline titania (rutile, anatase and brookite), anatase exhibits the greatest potential for a variety of applications, especially in the area of catalysis and sensors. However, with rutile being thermodynamically the most stable phase, anatase tends to transform into rutile on heating to temperatures in the range of 500 degrees C to 700 degrees C. Efforts made to stabilize the anatase phase at higher temperatures by doping with metal oxides suffer from the problems of having a large amorphous content on synthesis as well as the formation of secondary impurity phases on doping. Recent studies have suggested that the as-synthesised phase composition, crystallite size, initial surface area and processing conditions greatly influence the anatase to rutile transformation temperature. In this study nanocrystalline titania was synthesised in the anatase form bya chemical vapour synthesis (CVS) method using titanium tetra iso-propoxide (TTIP) as a precursor under varying flow rates of oxygen and helium. The anatase to rutile transformation was studied using high temperature X-ray diffraction (HTXRD) and simultaneous thermogravimetric analysis (STA), followed by transmission electron microscopy (TEM). It was demonstrated that the anatase-rutile transformation temperatures were dependent on the oxygen to helium flow rate ratio during CVS and the results are presented and discussed.

  17. Influence of Deposition Time on ZnS Thin Films Performance with Chemical Bath Deposition

    NASA Astrophysics Data System (ADS)

    Zhou, Limei; Tang, Nan; Wu, Sumei; Hu, Xiaofei; Xue, Yuzhi

    ZnS thin films had been deposited by chemical bath deposition method onto glass substrates in alkaline liquor. The reaction solution is made of ZnSO4, NH4OH and SC(NH2)2. Different deposition times (1 h, 1.5 h, 2 h, 2.5 h and 3 h) were selected to study the performance of ZnS thin films. As the results, the ZnS films' thickness were about 50-207 nm. XRD results showed an amorphous structure. Through comparing the surface morphology before and after annealing, it could be seen that annealing made some particles grow up and the surface smooth and even. The transmittance decreased with the increase of deposition time in the range of 300-800 nm. The transmittance of annealed ZnS film was lower than that of deposited one in the range of 300-800 nm. The ZnS band gap values were calculated in the range of 3.72-3.9 eV.

  18. Chemical vapor deposition of low reflective cobalt (II) oxide films

    NASA Astrophysics Data System (ADS)

    Amin-Chalhoub, Eliane; Duguet, Thomas; Samélor, Diane; Debieu, Olivier; Ungureanu, Elisabeta; Vahlas, Constantin

    2016-01-01

    Low reflective CoO coatings are processed by chemical vapor deposition from Co2(CO)8 at temperatures between 120 °C and 190 °C without additional oxygen source. The optical reflectivity in the visible and near infrared regions stems from 2 to 35% depending on deposition temperature. The combination of specific microstructural features of the coatings, namely a fractal ⿿cauliflower⿿ morphology and a grain size distribution more or less covering the near UV and IR wavelength ranges enhance light scattering and gives rise to a low reflectivity. In addition, the columnar morphology results in a density gradient in the vertical direction that we interpret as a refractive index gradient lowering reflectivity further down. The coating formed at 180 °C shows the lowest average reflectivity (2.9%), and presents an interesting deep black diffuse aspect.

  19. Optimization of chemical displacement deposition of copper on porous silicon.

    PubMed

    Bandarenka, Hanna; Redko, Sergey; Nenzi, Paolo; Balucani, Marco; Bondarenko, Vitaly

    2012-11-01

    Copper (II) sulfate was used as a source of copper to achieve uniform distribution of Cu particles deposited on porous silicon. Layers of the porous silicon were formed by electrochemical anodization of Si wafers in a mixture of HF, C3H7OH and deionized water. The well-known chemical displacement technique was modified to grow the copper particles of specific sizes. SEM and XRD analysis revealed that the outer surface of the porous silicon was covered with copper particles of the crystal orientation inherited from the planes of porous silicon skeleton. The copper crystals were found to have the cubic face centering elementary cell. In addition, the traces of Cu2O cubic primitive crystalline phases were identified. The dimensions of Cu particles were determined by the Feret's analysis of the SEM images. The sizes of the particles varied widely from a few to hundreds of nanometers. A phenomenological model of copper deposition was proposed.

  20. Synthesis of mullite coatings by chemical vapor deposition

    SciTech Connect

    Mulpuri, R.P.; Auger, M.; Sarin, V.K.

    1996-08-01

    Formation of mullite on ceramic substrates via chemical vapor deposition was investigated. Mullite is a solid solution of Al{sub 2}O{sub 3} and SiO{sub 2} with a composition of 3Al{sub 2}O{sub 3}{circ}2SiO{sub 2}. Thermodynamic calculations performed on the AlCl{sub 3}-SiCl{sub 4}-CO{sub 2}-H{sub 2} system were used to construct equilibrium CVD phase diagrams. With the aid of these diagrams and consideration of kinetic rate limiting factors, initial process parameters were determined. Through process optimization, crystalline CVD mullite coatings have been successfully grown on SiC and Si{sub 3}N{sub 4} substrates. Results from the thermodynamic analysis, process optimization, and effect of various process parameters on deposition rate and coating morphology are discussed.

  1. Direct fabrication of 3D graphene on nanoporous anodic alumina by plasma-enhanced chemical vapor deposition

    PubMed Central

    Zhan, Hualin; Garrett, David J.; Apollo, Nicholas V.; Ganesan, Kumaravelu; Lau, Desmond; Prawer, Steven; Cervenka, Jiri

    2016-01-01

    High surface area electrode materials are of interest for a wide range of potential applications such as super-capacitors and electrochemical cells. This paper describes a fabrication method of three-dimensional (3D) graphene conformally coated on nanoporous insulating substrate with uniform nanopore size. 3D graphene films were formed by controlled graphitization of diamond-like amorphous carbon precursor films, deposited by plasma-enhanced chemical vapour deposition (PECVD). Plasma-assisted graphitization was found to produce better quality graphene than a simple thermal graphitization process. The resulting 3D graphene/amorphous carbon/alumina structure has a very high surface area, good electrical conductivity and exhibits excellent chemically stability, providing a good material platform for electrochemical applications. Consequently very large electrochemical capacitance values, as high as 2.1 mF for a sample of 10 mm3, were achieved. The electrochemical capacitance of the material exhibits a dependence on bias voltage, a phenomenon observed by other groups when studying graphene quantum capacitance. The plasma-assisted graphitization, which dominates the graphitization process, is analyzed and discussed in detail. PMID:26805546

  2. Direct fabrication of 3D graphene on nanoporous anodic alumina by plasma-enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Zhan, Hualin; Garrett, David J.; Apollo, Nicholas V.; Ganesan, Kumaravelu; Lau, Desmond; Prawer, Steven; Cervenka, Jiri

    2016-01-01

    High surface area electrode materials are of interest for a wide range of potential applications such as super-capacitors and electrochemical cells. This paper describes a fabrication method of three-dimensional (3D) graphene conformally coated on nanoporous insulating substrate with uniform nanopore size. 3D graphene films were formed by controlled graphitization of diamond-like amorphous carbon precursor films, deposited by plasma-enhanced chemical vapour deposition (PECVD). Plasma-assisted graphitization was found to produce better quality graphene than a simple thermal graphitization process. The resulting 3D graphene/amorphous carbon/alumina structure has a very high surface area, good electrical conductivity and exhibits excellent chemically stability, providing a good material platform for electrochemical applications. Consequently very large electrochemical capacitance values, as high as 2.1 mF for a sample of 10 mm3, were achieved. The electrochemical capacitance of the material exhibits a dependence on bias voltage, a phenomenon observed by other groups when studying graphene quantum capacitance. The plasma-assisted graphitization, which dominates the graphitization process, is analyzed and discussed in detail.

  3. Photoassisted Chemically Deposited Tin Sulfide Thin Films Based on Two Different Chemical Formulations

    NASA Astrophysics Data System (ADS)

    Remadevi, T. L.; Dhanya, A. C.; Deepa, K.

    2014-11-01

    Photoassisted chemical deposition is a customized form of chemical bath deposition where the reaction is carried out in the presence of ultraviolet light. Deposition of tin sulfide films was carried out by this method using two different chemical baths. The as-prepared samples from the acetone bath were crystalline, exhibiting the orthorhombic structure of the Sn2S3 phase, but those from the glacial acetic acid bath were amorphous. The crystallinity of the films was improved on annealing. The deposition rate was found to depend on the pH of the bath and the chemical formulation. Distinct morphology was obtained for as-grown films. The films from the acetone bath were compact with uniform morphology of needle-shaped grains having equal diameters and lengths. The films from the glacial acetic acid bath were similar, with smaller needles. The high absorption coefficients of as-grown and annealed films show their potential application as absorber layers in photovoltaic devices. The refractive index was estimated from the reflectance of the films. The estimated activation energies of the as-prepared films from the acetone and glacial acetic acid baths were 0.4 eV and 0.46 eV, whereas those of the annealed samples were 0.2 eV and 0.44 eV, respectively. The activation energy was found to decrease for annealed films due to a decrease in trap sites.

  4. Chemical Vapor Deposited Zinc Sulfide. SPIE Press Monograph

    SciTech Connect

    McCloy, John S.; Tustison, Randal W.

    2013-04-22

    Zinc sulfide has shown unequaled utility for infrared windows that require a combination of long-wavelength infrared transparency, mechanical durability, and elevated-temperature performance. This book reviews the physical properties of chemical vapor deposited ZnS and their relationship to the CVD process that produced them. An in-depth look at the material microstructure is included, along with a discussion of the material's optical properties. Finally, because the CVD process itself is central to the development of this material, a brief history is presented.

  5. Unusual thermopower of inhomogeneous graphene grown by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Nam, Youngwoo; Sun, Jie; Lindvall, Niclas; Jae Yang, Seung; Rae Park, Chong; Woo Park, Yung; Yurgens, August

    2014-01-01

    We report on thermopower (TEP) and resistance measurements of inhomogeneous graphene grown by chemical vapor deposition (CVD). Unlike the conventional resistance of pristine graphene, the gate-dependent TEP shows a large electron-hole asymmetry. This can be accounted for by inhomogeneity of the CVD-graphene where individual graphene regions contribute with different TEPs. At the high magnetic field and low temperature, the TEP has large fluctuations near the Dirac point associated with the disorder in the CVD-graphene. TEP measurements reveal additional characteristics of CVD-graphene, which are difficult to obtain from the measurement of resistance alone.

  6. Highly sensitive wide bandwidth photodetectors using chemical vapor deposited graphene

    NASA Astrophysics Data System (ADS)

    Goo Kang, Chang; Kyung Lee, Sang; Jin Yoo, Tae; Park, Woojin; Jung, Ukjin; Ahn, Jinho; Hun Lee, Byoung

    2014-04-01

    A photodetector generating a nearly constant photocurrent in a very wide spectral range from ultraviolet (UV) to infrared has been demonstrated using chemical vapor deposited (CVD) graphene. Instability due to a photochemical reaction in the UV region has been minimized using an Al2O3 passivation layer, and a responsivity comparable to that of Highly Ordered Pyrolytic Graphite graphene photodetectors of ˜8 mA/W has been achieved at a 0.1 V bias, despite high defect density in the CVD graphene. A highly sensitive multi-band photodetector using graphene has many potential applications including optical interconnects, multi-band imaging sensors, highly sensitive motion detectors, etc.

  7. Plasma-enhanced chemical vapor deposition of multiwalled carbon nanofibers

    NASA Technical Reports Server (NTRS)

    Matthews, Kristopher; Cruden, Brett A.; Chen, Bin; Meyyappan, M.; Delzeit, Lance

    2002-01-01

    Plasma-enhanced chemical vapor deposition is used to grow vertically aligned multiwalled carbon nanofibers (MWNFs). The graphite basal planes in these nanofibers are not parallel as in nanotubes; instead they exhibit a small angle resembling a stacked cone arrangement. A parametric study with varying process parameters such as growth temperature, feedstock composition, and substrate power has been conducted, and these parameters are found to influence the growth rate, diameter, and morphology. The well-aligned MWNFs are suitable for fabricating electrode systems in sensor and device development.

  8. Josephson tunnel junctions with chemically vapor deposited polycrystalline germanium barriers

    SciTech Connect

    Kroger, H.; Jillie, D.W.; Smith, L.N.; Phaneuf, L.E.; Potter, C.N.; Shaw, D.M.; Cukauskas, E.J.; Nisenoff, M.

    1984-03-01

    High quality Josephson tunnel junctions have been fabricated whose tunneling barrier is polycrystalline germanium chemically vapor deposited on a NbN base electrode and covered by a Nb counterelectrode. These junctions have excellent characteristics for device applications: values of V/sub m/ (the product of the critical current and the subgap resistance measured at 2 mV and 4.2 K) ranging between 35--48 mV, ideal threshold curves, a steep current rise at the gap voltage, and Josephson current densities from 100 to 1100 A/cm/sup 2/.

  9. Chemical surface deposition of ultra-thin semiconductors

    DOEpatents

    McCandless, Brian E.; Shafarman, William N.

    2003-03-25

    A chemical surface deposition process for forming an ultra-thin semiconducting film of Group IIB-VIA compounds onto a substrate. This process eliminates particulates formed by homogeneous reactions in bath, dramatically increases the utilization of Group IIB species, and results in the formation of a dense, adherent film for thin film solar cells. The process involves applying a pre-mixed liquid coating composition containing Group IIB and Group VIA ionic species onto a preheated substrate. Heat from the substrate causes a heterogeneous reaction between the Group IIB and VIA ionic species of the liquid coating composition, thus forming a solid reaction product film on the substrate surface.

  10. ZnS nanoflakes deposition by modified chemical method

    SciTech Connect

    Desai, Mangesh A. Sartale, S. D.

    2014-04-24

    We report deposition of zinc sulfide nanoflakes on glass substrates by modified chemical method. The modified chemical method involves adsorption of zinc–thiourea complex on the substrate and its dissociation in presence of hydroxide ions to release sulfur ions from thiourea which react with zinc ions present in the complex to form zinc sulfide nanoflakes at room temperature. Influence of zinc salt and thiourea concentrations ratios on the morphology of the films was investigated by scanning electron microscope (SEM). The ratio of zinc and thiourea in the zinc–thiourea complex significantly affect the size of the zinc sulfide nanoflakes, especially width and density of the nanoflakes. The X-ray diffraction analysis exhibits polycrystalline nature of the zinc sulfide nanoflakes with hexagonal phase.

  11. ZnS nanoflakes deposition by modified chemical method

    NASA Astrophysics Data System (ADS)

    Desai, Mangesh A.; Sartale, S. D.

    2014-04-01

    We report deposition of zinc sulfide nanoflakes on glass substrates by modified chemical method. The modified chemical method involves adsorption of zinc-thiourea complex on the substrate and its dissociation in presence of hydroxide ions to release sulfur ions from thiourea which react with zinc ions present in the complex to form zinc sulfide nanoflakes at room temperature. Influence of zinc salt and thiourea concentrations ratios on the morphology of the films was investigated by scanning electron microscope (SEM). The ratio of zinc and thiourea in the zinc-thiourea complex significantly affect the size of the zinc sulfide nanoflakes, especially width and density of the nanoflakes. The X-ray diffraction analysis exhibits polycrystalline nature of the zinc sulfide nanoflakes with hexagonal phase.

  12. Ti-doped hydrogenated diamond like carbon coating deposited by hybrid physical vapor deposition and plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Lee, Na Rae; Sle Jun, Yee; Moon, Kyoung Il; Sunyong Lee, Caroline

    2017-03-01

    Diamond-like carbon films containing titanium and hydrogen (Ti-doped DLC:H) were synthesized using a hybrid technique based on physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD). The film was deposited under a mixture of argon (Ar) and acetylene gas (C2H2). The amount of Ti in the Ti-doped DLC:H film was controlled by varying the DC power of the Ti sputtering target ranging from 0 to 240 W. The composition, microstructure, mechanical and chemical properties of Ti-doped DLC:H films with varying Ti concentrations, were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nano indentation, a ball-on-disk tribometer, a four-point probe system and dynamic anodic testing. As a result, the optimum composition of Ti in Ti-doped DLC:H film using our hybrid method was found to be a Ti content of 18 at. %, having superior electrical conductivity and high corrosion resistance, suitable for bipolar plates. Its hardness value was measured to be 25.6 GPa with a low friction factor.

  13. Chemical vapor deposition of conformal, functional, and responsive polymer films.

    PubMed

    Alf, Mahriah E; Asatekin, Ayse; Barr, Miles C; Baxamusa, Salmaan H; Chelawat, Hitesh; Ozaydin-Ince, Gozde; Petruczok, Christy D; Sreenivasan, Ramaswamy; Tenhaeff, Wyatt E; Trujillo, Nathan J; Vaddiraju, Sreeram; Xu, Jingjing; Gleason, Karen K

    2010-05-11

    Chemical vapor deposition (CVD) polymerization utilizes the delivery of vapor-phase monomers to form chemically well-defined polymeric films directly on the surface of a substrate. CVD polymers are desirable as conformal surface modification layers exhibiting strong retention of organic functional groups, and, in some cases, are responsive to external stimuli. Traditional wet-chemical chain- and step-growth mechanisms guide the development of new heterogeneous CVD polymerization techniques. Commonality with inorganic CVD methods facilitates the fabrication of hybrid devices. CVD polymers bridge microfabrication technology with chemical, biological, and nanoparticle systems and assembly. Robust interfaces can be achieved through covalent grafting enabling high-resolution (60 nm) patterning, even on flexible substrates. Utilizing only low-energy input to drive selective chemistry, modest vacuum, and room-temperature substrates, CVD polymerization is compatible with thermally sensitive substrates, such as paper, textiles, and plastics. CVD methods are particularly valuable for insoluble and infusible films, including fluoropolymers, electrically conductive polymers, and controllably crosslinked networks and for the potential to reduce environmental, health, and safety impacts associated with solvents. Quantitative models aid the development of large-area and roll-to-roll CVD polymer reactors. Relevant background, fundamental principles, and selected applications are reviewed.

  14. Quantitative study on the chemical solution deposition of zinc oxysulfide

    SciTech Connect

    Reinisch, Michael; Perkins, Craig L.; Steirer, K. Xerxes

    2015-11-21

    Zinc Oxysulfide (ZnOS) has demonstrated potential in the last decade to replace CdS as a buffer layer material since it is a wide-band-gap semiconductor with performance advantages over CdS (Eg = 2.4 eV) in the near UV-range for solar energy conversion. However, questions remain on the growth mechanisms of chemical bath deposited ZnOS. In this study, a detailed model is employed to calculate solubility diagrams that describe simple conditions for complex speciation control using only ammonium hydroxide without additional base. For these conditions, ZnOS is deposited via aqueous solution deposition on a quartz crystal microbalance in a continuous flow cell. Data is used to analyze the growth rate dependence on temperature and also to elucidate the effects of dimethylsulfoxide (DMSO) when used as a co-solvent. Activation energies (EA) of ZnOS are calculated for different flow rates and solution compositions. As a result, the measured EA relationships are affected by changes in the primary growth mechanism when DMSO is included.

  15. Fundamental studies of the chemical vapor deposition of diamond

    SciTech Connect

    Stevenson, D.A.

    1991-01-01

    The plasma or thermally enhanced low pressure chemical vapor deposition of diamond films is an exciting development with many challenging fundamental problems. The early stages of nucleation is relevant to the initial growth rate and the perfection and morphology of the deposit. To isolate one of the factors that influence nucleation, we have studied the effect of surface topography on the nucleation process. Our earlier work has shown preferential nucleation on sharp convex features and we have proposed several possible reasons for this behavior, including dangling bonds at the convex features. In our recent work, we have extended our investigation to include a novel patterning of silicon substrates used to pattern silicon solar cells. The results are consistent with our earlier observations that the majority of nucleation events occur on protruding surface features. In an effort to establish whether dangling bonds at the protruding surfaces may be responsible for the selective nucleation, we have evaluated the dangling bond concentration using electron spin resonance. We have carried out deposition under nominally identical surface topography, but with different concentrations of dangling bonds at or near the surface. The results of this study indicate that dangling bonds play a minor role in enhancing nucleation, in contrast to a substantial role played by special surface topographical features. In the course of the past year, we have submitted four manuscripts for publication and have made six presentations.

  16. Quantitative study on the chemical solution deposition of zinc oxysulfide

    DOE PAGES

    Reinisch, Michael; Perkins, Craig L.; Steirer, K. Xerxes

    2015-11-21

    Zinc Oxysulfide (ZnOS) has demonstrated potential in the last decade to replace CdS as a buffer layer material since it is a wide-band-gap semiconductor with performance advantages over CdS (Eg = 2.4 eV) in the near UV-range for solar energy conversion. However, questions remain on the growth mechanisms of chemical bath deposited ZnOS. In this study, a detailed model is employed to calculate solubility diagrams that describe simple conditions for complex speciation control using only ammonium hydroxide without additional base. For these conditions, ZnOS is deposited via aqueous solution deposition on a quartz crystal microbalance in a continuous flow cell.more » Data is used to analyze the growth rate dependence on temperature and also to elucidate the effects of dimethylsulfoxide (DMSO) when used as a co-solvent. Activation energies (EA) of ZnOS are calculated for different flow rates and solution compositions. As a result, the measured EA relationships are affected by changes in the primary growth mechanism when DMSO is included.« less

  17. Conversion Coatings for Aluminum Alloys by Chemical Vapor Deposition Mechanisms

    NASA Technical Reports Server (NTRS)

    Reye, John T.; McFadden, Lisa S.; Gatica, Jorge E.; Morales, Wilfredo

    2004-01-01

    With the rise of environmental awareness and the renewed importance of environmentally friendly processes, the United States Environmental Protection Agency has targeted surface pre-treatment processes based on chromates. Indeed, this process has been subject to regulations under the Clean Water Act as well as other environmental initiatives, and there is today a marked movement to phase the process out in the near future. Therefore, there is a clear need for new advances in coating technology that could provide practical options for replacing present industrial practices. Depending on the final application, such coatings might be required to be resistant to corrosion, act as chemically resistant coatings, or both. This research examined a chemical vapor deposition (CVD) mechanism to deposit uniform conversion coatings onto aluminum alloy substrates. Robust protocols based on solutions of aryl phosphate ester and multi-oxide conversion coating (submicron) films were successfully grown onto the aluminum alloy samples. These films were characterized by X-ray Photoelectron Spectroscopy (XPS). Preliminary results indicate the potential of this technology to replace aqueous-based chromate processes.

  18. Precursors for chemical and photochemical vapor deposition of copper metal

    NASA Astrophysics Data System (ADS)

    James, Alicia Marie

    The colorless square-planar cluster [CuN(SiMe3)2] 4, which contains four Cu(I) ions with four bridging amide groups, was studied as a precursor for chemical and photochemical vapor deposition of Cu metal. The cluster phosphoresces in CH2Cl2 solution and in the solid state at room temperature. Its electronic spectrum in CH 2Cl2 consists of two intense bands which are assigned to symmetry-allowed 3d → 4p transitions; the phosphorescence is also likely to be metal-centered. Solid [CuN(SiMe3)2]4 luminesces with approximately the same spectrum as that of the CH2Cl2 solutions. At 77 K, the solid-state luminescence red-shifts slightly. The emission lifetime in glassy Et2O solution is 690 mus. [CuN(SiMe3) 2]4 deposits Cu metal via chemical vapor deposition under H2 carrier gas at substrate temperatures of 145--200°C. Deposition also occurs photochemically beginning at 136--138°C under near-UV irradiation. The preparation of monomeric derivatives of [CuN(SiMe3) 2]4 was attempted by using neutral donor ligands L (e.g. LnCuN(SiMe3)2; L = CO, PR3, CN-t-Bu; n = 1--3). The target compounds were expected to be more volatile than the copper cluster and still maintain photosensitivity. CuCl and [Cu(CH 3CN)4]PF6 were used as starting materials. Even in the presence of L, [CuN(SiMe3)2] 4 is a major product in reactions using CuCl and NaN(SiCH3) 2- [Cu(CH3CN)4]PF6 was a promising route for the monomeric Cu(I) complexes because of ready dissociation of its acetonitrile ligands. However, the characterization of these complexes was unsuccessful. Other Cu(I) amide clusters have been prepared; they may also be suitable for chemical and photochemical vapor deposition of Cu. [CuNEt2] 4, [CuN(i-Pr)2]4, and [CuN(t-Bu)(SiMe 3)]4 are phosphorescent though they are very air sensitive. They should be more volatile and produce Cu metal films more readily than [CuN(SiMe3)2]4 Cu(hfac)2 is a versatile Lewis acid, forming adducts with a variety of bases. The bases that were used were ethylene

  19. Robust Ultralow-k Dielectric (Fluorocarbon) Deposition by Microwave Plasma-Enhanced Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Kikuchi, Yoshiyuki; Miyatani, Kotaro; Kobayashi, Yasuo; Kawamura, Kohei; Nemoto, Takenao; Nakamura, Masahiro; Matsumoto, Hirokazu; Ito, Azumi; Shirotori, Akihide; Nozawa, Toshihisa; Matsuoka, Takaaki

    2012-05-01

    A robust fluorocarbon film was successfully deposited on a substrate at a temperature above 400 °C by the new microwave plasma-enhanced chemical vapor deposition (MWPE-CVD) method using the linear C5F8 precursor instead of a conventional cyclic C5F8 one. The fluorocarbon performed keeping the dielectric constant low as a value of 2.25 by controlling the molecular structure forming cross-linked poly(tetrafluoroethylene) (PTFE) chains with configurational carbon atoms. The novel fluorocarbon demonstrates less fluorine degassing at an elevated temperature, with high mechanical strength and without degradation of adhesion of the fluorocarbon film to SiCN and SiOx stacked films after thermal stress at 400 °C and 1 atm N2 for 1 h. Consequently, this robust fluorocarbon film is considered a promising candidate for general porous silicon materials with applications to practical integration processes as an interlayer dielectric.

  20. NASA evaluation of Type 2 chemical depositions. [effects of deicer deposition on aircraft tire friction performance

    NASA Technical Reports Server (NTRS)

    Yager, Thomas J.; Stubbs, Sandy M.; Howell, W. Edward; Webb, Granville L.

    1993-01-01

    Recent findings from NASA Langley tests to define effects of aircraft Type 2 chemical deicer depositions on aircraft tire friction performance are summarized. The Aircraft Landing Dynamics Facility (ALDF) is described together with the scope of the tire cornering and braking friction tests conducted up to 160 knots ground speed. Some lower speed 32 - 96 km/hr (20 - 60 mph) test run data obtained using an Instrumented Tire Test Vehicle (ITTV) to determine effects of tire bearing pressure and transverse grooving on cornering friction performance are also discussed. Recommendations are made concerning which parameters should be evaluated in future testing.

  1. Chemical Vapor Deposition of Cu Film on SiO2 Using Cyclopentadienylcoppertriethylphosphine

    NASA Astrophysics Data System (ADS)

    Chichibu, Shigefusa; Yoshida, Nobuhide; Higuchi, Hirofumi; Matsumoto, Satoru

    1992-12-01

    Chemical vapor deposition of Cu film on SiO2 has been studied using cyclopentadienylcoppertriethylphosphine (C5H5CuP(C2H5)3), which contains no oxygen atom itself. The deposited Cu films had complete (111) preferred orientation for deposition temperatures below 450°C. From Auger electron spectroscopy measurements, no simultaneous incorporation of oxygen during the deposition has been confirmed. Relatively low temperature deposition is preferable to reduce the condensation of deposited Cu.

  2. Electrochromic and optical study of atmospheric pressure chemical vapour deposition MoO3-Cr2O3 films.

    PubMed

    Ivanova, T; Gesheva, K A; Kozlov, M; Abrashev, M

    2011-09-01

    Electrochromism (EC) is a phenomenon in which materials are able to change their optical properties in a reversible and persistent way under the action of a voltage pulse. The studied MoO3-Cr2O3 films are obtained by atmospheric pressure CVD. Mixing MoO3 films with Cr2O3 is expected to enhance optical transparency and to modulate electrochromic properties of MoO3 films. In the present work, the study is focused on the morphological, structural and optical properties of MoO3-Cr2O3 films as a function of annealing temperatures. Raman spectroscopy and optical spectrophotometry are used for the film characterization. The mixed oxide films obtained on ordinary glass substrates show transmittance values in the range of 70-80%. Surface morphology is analyzed by SEM and AFM methods. The microanalysis of MoO3-Cr2O3 films reveals uniform distribution of the elements, which is a sign of homogeneous structure.

  3. CORRIGENDUM: Optical and electronic properties of ZnO:P/n+-Si heterostructures fabricated by metalorganic chemical vapour deposition

    NASA Astrophysics Data System (ADS)

    Zhu, H.; Du, G.; Li, X.; Zhang, Y.; Cui, Y.; Huang, K.; Xia, X.; Yang, T.; Zhang, B.; Chang, Y.

    2007-04-01

    There is a mistake in the first sentence of the paper, where 'II-III' should read as 'II-IV'. The corrected sentence is: Zinc oxide (ZnO) is a II-IV compound semiconductor with a hexagonal wurtzite-type crystal structure.

  4. Magnetic and Optical Properties of Ga(1-x)Mn(x)N Grown by Metalorganic Chemical Vapour Deposition

    DTIC Science & Technology

    2005-02-17

    microscopy (AFM) was performed using a PSIA XE-100. Magnetic properties were analysed using a Quantum Design MPMS 5S SQUID magnetometer at temperatures from...magnetization behaviour of the films was determined by temperature-dependent SQUID magnetometry on undoped and Mn-doped samples from 5 K to 300 K. A...of Defense. MS gratefully acknowledges the fellowship of the Alexander von Humboldt -foundation. The authors are grateful to A M Payne, D Nicol, D

  5. Design and implementation of a novel portable atomic layer deposition/chemical vapor deposition hybrid reactor.

    PubMed

    Selvaraj, Sathees Kannan; Jursich, Gregory; Takoudis, Christos G

    2013-09-01

    We report the development of a novel portable atomic layer deposition chemical vapor deposition (ALD/CVD) hybrid reactor setup. Unique feature of this reactor is the use of ALD/CVD mode in a single portable deposition system to fabricate multi-layer thin films over a broad range from "bulk-like" multi-micrometer to nanometer atomic dimensions. The precursor delivery system and control-architecture are designed so that continuous reactant flows for CVD and cyclic pulsating flows for ALD mode are facilitated. A custom-written LabVIEW program controls the valve sequencing to allow synthesis of different kinds of film structures under either ALD or CVD mode or both. The entire reactor setup weighs less than 40 lb and has a relatively small footprint of 8 × 9 in., making it compact and easy for transportation. The reactor is tested in the ALD mode with titanium oxide (TiO2) ALD using tetrakis(diethylamino)titanium and water vapor. The resulting growth rate of 0.04 nm/cycle and purity of the films are in good agreement with literature values. The ALD/CVD hybrid mode is demonstrated with ALD of TiO2 and CVD of tin oxide (SnOx). Transmission electron microscopy images of the resulting films confirm the formation of successive distinct TiO2-ALD and SnO(x)-CVD layers.

  6. Design and implementation of a novel portable atomic layer deposition/chemical vapor deposition hybrid reactor

    NASA Astrophysics Data System (ADS)

    Selvaraj, Sathees Kannan; Jursich, Gregory; Takoudis, Christos G.

    2013-09-01

    We report the development of a novel portable atomic layer deposition chemical vapor deposition (ALD/CVD) hybrid reactor setup. Unique feature of this reactor is the use of ALD/CVD mode in a single portable deposition system to fabricate multi-layer thin films over a broad range from "bulk-like" multi-micrometer to nanometer atomic dimensions. The precursor delivery system and control-architecture are designed so that continuous reactant flows for CVD and cyclic pulsating flows for ALD mode are facilitated. A custom-written LabVIEW program controls the valve sequencing to allow synthesis of different kinds of film structures under either ALD or CVD mode or both. The entire reactor setup weighs less than 40 lb and has a relatively small footprint of 8 × 9 in., making it compact and easy for transportation. The reactor is tested in the ALD mode with titanium oxide (TiO2) ALD using tetrakis(diethylamino)titanium and water vapor. The resulting growth rate of 0.04 nm/cycle and purity of the films are in good agreement with literature values. The ALD/CVD hybrid mode is demonstrated with ALD of TiO2 and CVD of tin oxide (SnOx). Transmission electron microscopy images of the resulting films confirm the formation of successive distinct TiO2-ALD and SnOx-CVD layers.

  7. Influence of deposition parameters on chemical properties of calcium phosphate coatings prepared by using electrostatic spray deposition.

    PubMed

    Leeuwenburgh, S; Wolke, J; Schoonman, J; Jansen, J A

    2005-08-01

    The electrostatic spray deposition (ESD) technique offers the possibility of depositing calcium phosphate (CaP) coatings onto various substrate materials with defined chemical and morphological properties. The relationship between physical, apparatus-related deposition parameters, and the chemical characteristics of ESD coatings was investigated by means of X-ray diffraction, Fourier transform infrared spectroscopy, and energy dispersive spectroscopy to be able to deposit CaP coatings with tailored chemical properties. The results showed that the chemical characteristics of CaP coatings, deposited with use of the ESD technique, were strongly dependent on the deposition temperature, the nozzle-to-substrate distance, the liquid flow rate, and the geometry of the spraying nozzle. By investigating the influence of the deposition temperature, information could be obtained on the formation mechanism of CaP coatings-and specifically the biologically interesting carbonate apatite phase-using the ESD technique. CaP coatings were not formed merely because of solvent evaporation; a chemical reaction was needed to synthesize the coatings. This reaction involved thermal decomposition of the organic solvent butyl carbitol into carbonate ions via formation of intermediate oxalate ions. The amount of carbonate incorporation, and consequently, the Ca/P ratios of the deposited coatings, was shown 1) to decrease with increasing nozzle-to-substrate distance, 2) to decrease with increasing liquid flow rate, and 3) to decrease by making use of a novel two-component nozzle geometry. (c) 2005 Wiley Periodicals, Inc.

  8. Radio-frequency plasma chemical vapor deposition growth of diamond

    NASA Technical Reports Server (NTRS)

    Meyer, Duane E.; Dillon, Rodney O.; Woollam, John A.

    1989-01-01

    Plasma chemical vapor deposition (CVD) at 13.56 MHz has been used to produce diamond particles in two different inductively coupled systems with a mixture of methane and hydrogen. The effect of a diamondlike carbon (DLC) overcoating on silicon, niobium, and stainless-steel substrates has been investigated and in the case of silicon has been found to enhance particle formation as compared to uncoated polished silicon. In addition the use of carbon monoxide in hydrogen has been found to produce well-defined individual faceted particles as well as polycrystalline films on quartz and DLC coated silicon substrates. Plasma CVD is a competitive approach to production of diamond films. It has the advantage over microwave systems of being easily scaled to large volume and high power.

  9. Low Temperature Chemical Vapor Deposition Of Thin Film Magnets

    DOEpatents

    Miller, Joel S.; Pokhodnya, Kostyantyn I.

    2003-12-09

    A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

  10. Creep of chemically vapor deposited SiC fibers

    NASA Technical Reports Server (NTRS)

    Dicarlo, J. A.

    1984-01-01

    The creep, thermal expansion, and elastic modulus properties for chemically vapor deposited SiC fibers were measured between 1000 and 1500 C. Creep strain was observed to increase logarithmically with time, monotonically with temperature, and linearly with tensile stress up to 600 MPa. The controlling activation energy was 480 + or - 20 kJ/mole. Thermal pretreatments near 1200 and 1450 C were found to significantly reduce fiber creep. These results coupled with creep recovery observations indicate that below 1400 C fiber creep is anelastic with neglible plastic component. This allowed a simple predictive method to be developed for describing fiber total deformation as a function of time, temperature, and stress. Mechanistic analysis of the property data suggests that fiber creep is the result of beta-SiC grain boundary sliding controlled by a small percent of free silicon in the grain boundaries.

  11. Chemically deposited nanocrystalline PbS: effect of substrates

    NASA Astrophysics Data System (ADS)

    Choudhury, N.

    2016-03-01

    PbS nanoparticles have been grown in polyvinyl alcohol matrix on glass and mica substrates by chemical bath deposition method at room temperature. The structural investigation of nanocrystalline PbS has been carried out by X-ray diffraction profile analysis using Williamson-Hall and modified Williamson-Hall methods. The values of the crystallite size are found to be within the range from 10 to 17 nm having very high dislocation density of the order of 1017 m-2. The optical band gaps of the films have been determined from optical absorption measurements and found to be within the range from 2.1 to 2.8 eV. The band gap is shifted from infrared to the visible region on the account of quantum confinement in the nanostructured films due to small crystallite size. Such films, with a band gap lying in the visible region, are suitable for use as solar absorbers rather than infrared applications.

  12. Strain relaxation in graphene grown by chemical vapor deposition

    SciTech Connect

    Troppenz, Gerald V. Gluba, Marc A.; Kraft, Marco; Rappich, Jörg; Nickel, Norbert H.

    2013-12-07

    The growth of single layer graphene by chemical vapor deposition on polycrystalline Cu substrates induces large internal biaxial compressive strain due to thermal expansion mismatch. Raman backscattering spectroscopy and atomic force microscopy were used to study the strain relaxation during and after the transfer process from Cu foil to SiO{sub 2}. Interestingly, the growth of graphene results in a pronounced ripple structure on the Cu substrate that is indicative of strain relaxation of about 0.76% during the cooling from the growth temperature. Removing graphene from the Cu substrates and transferring it to SiO{sub 2} results in a shift of the 2D phonon line by 27 cm{sup −1} to lower frequencies. This translates into additional strain relaxation. The influence of the processing steps, used etching solution and solvents on strain, is investigated.

  13. Advanced titania buffer layer architectures prepared by chemical solution deposition

    NASA Astrophysics Data System (ADS)

    Kunert, J.; Bäcker, M.; Brunkahl, O.; Wesolowski, D.; Edney, C.; Clem, P.; Thomas, N.; Liersch, A.

    2011-08-01

    Chemical solution deposition (CSD) was used to grow high-quality (100) oriented films of SrTiO3 (STO) on CSD CaTiO3 (CTO), Ba0.1Ca0.9TiO3 (BCT) and STO seed and template layers. These template films bridge the lattice misfit between STO and the nickel-tungsten (NiW) substrate, assisting in dense growth of textured STO. Additional niobium (Nb) doping of the STO buffer layer reduces oxygen diffusion which is necessary to avoid undesired oxidation of the NiW. The investigated templates offer suitable alternatives to established standard buffer systems like La2Zr2O7 (LZO) and CeO2 for coated conductors.

  14. Chemical Vapor Deposition at High Pressure in a Microgravity Environment

    NASA Technical Reports Server (NTRS)

    McCall, Sonya; Bachmann, Klaus; LeSure, Stacie; Sukidi, Nkadi; Wang, Fuchao

    1999-01-01

    In this paper we present an evaluation of critical requirements of organometallic chemical vapor deposition (OMCVD) at elevated pressure for a channel flow reactor in a microgravity environment. The objective of using high pressure is to maintain single-phase surface composition for materials that have high thermal decomposition pressure at their optimum growth temperature. Access to microgravity is needed to maintain conditions of laminar flow, which is essential for process analysis. Based on ground based observations we present an optimized reactor design for OMCVD at high pressure and reduced gravity. Also, we discuss non-intrusive real-time optical monitoring of flow dynamics coupled to homogeneous gas phase reactions, transport and surface processes. While suborbital flights may suffice for studies of initial stages of heteroepitaxy experiments in space are essential for a complete evaluation of steady-state growth.

  15. Chemical Vapor Deposition Growth of Graphene and Related Materials

    NASA Astrophysics Data System (ADS)

    Kitaura, Ryo; Miyata, Yasumitsu; Xiang, Rong; Hone, James; Kong, Jing; Ruoff, Rodney S.; Maruyama, Shigeo

    2015-12-01

    Research on atomic layers including graphene, hexagonal boron nitride (hBN), transition metal dichalcogenides (TMDCs) and their heterostructures has attracted a great deal of attention. Chemical vapor deposition (CVD) can provide large-area structure-defined high-quality atomic layer samples, which have considerably contributed to the recent advancement of atomic-layer research. In this article, we focus on the CVD growth of various atomic layers and review recent progresses including (1) the CVD growth of graphene using methane and ethanol as carbon sources, (2) the CVD growth of hBN using borazine and ammonia borane, (3) the CVD growth of various TMDCs using single and multi-furnace methods, and (4) CVD growth of vertical and lateral heterostructures such as graphene/hBN, MoS2/graphite, WS2/hBN and MoS2/WS2.

  16. Characterization of Carbon Nanotubes Grown by Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Cochrane, J. C.; Zhu, Shen; Su, Ching-Hua; Lehoczky, S. L.; Rose, M. Franklin (Technical Monitor)

    2001-01-01

    Since the superior properties of multi-wall carbon nanotubes (MWCNT) could improve numerous devices such as electronics and sensors, many efforts have been made in investigating the growth mechanism of MWCNT to synthesize high quality MWCNT. Chemical vapor deposition (CVD) is widely used for MWCNT synthesis, and scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS) are useful methods for analyzing the structure, morphology and composition of MWCNT. Temperature and pressure are two important growth parameters for fabricating carbon nanotubes. In MWCNT growth by CVD, the plasma assisted method is normally used for low temperature growth. However a high temperature environment is required for thermal CVD. A systematic study of temperature and pressure-dependence is very helpful to understanding MWCNT growth. Transition metal particles are commonly used as catalysis in carbon nanotube growth. It is also interesting to know how temperature and pressure affect the interface of carbon species and catalyst particles

  17. Chemical vapor deposition fluid flow simulation modelling tool

    NASA Technical Reports Server (NTRS)

    Bullister, Edward T.

    1992-01-01

    Accurate numerical simulation of chemical vapor deposition (CVD) processes requires a general purpose computational fluid dynamics package combined with specialized capabilities for high temperature chemistry. In this report, we describe the implementation of these specialized capabilities in the spectral element code NEKTON. The thermal expansion of the gases involved is shown to be accurately approximated by the low Mach number perturbation expansion of the incompressible Navier-Stokes equations. The radiative heat transfer between multiple interacting radiating surfaces is shown to be tractable using the method of Gebhart. The disparate rates of reaction and diffusion in CVD processes are calculated via a point-implicit time integration scheme. We demonstrate the use above capabilities on prototypical CVD applications.

  18. Field emission properties of chemical vapor deposited individual graphene

    SciTech Connect

    Zamri Yusop, Mohd; Kalita, Golap; Yaakob, Yazid; Takahashi, Chisato; Tanemura, Masaki

    2014-03-03

    Here, we report field emission (FE) properties of a chemical vapor deposited individual graphene investigated by in-situ transmission electron microscopy. Free-standing bilayer graphene is mounted on a cathode microprobe and FE processes are investigated varying the vacuum gap of cathode and anode. The threshold field for 10 nA current were found to be 515, 610, and 870 V/μm for vacuum gap of 400, 300, and 200 nm, respectively. It is observed that the structural stability of a high quality bilayer graphene is considerably stable during emission process. By contacting the nanoprobe with graphene and applying a bias voltage, structural deformation and buckling are observed with significant rise in temperature owing to Joule heating effect. The finding can be significant for practical application of graphene related materials in emitter based devices as well as understanding the contact resistance influence and heating effect.

  19. Patterned growth of tungsten diselenide flakes by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Wang, Zhendong; Huang, Qi; Chen, Peng; Wang, Jianyu; Lu, Yan; Zhang, Sihong; Liang, Xuelei; Wang, Li

    2017-08-01

    By introducing prepatterned Pt/Ti dots, arrays of WSe2 flakes have been successfully grown on SiO2 substrates by chemical vapor deposition, opening a new pathway for the large-scale production of WSe2-based devices. The WSe2 flakes are high-quality single crystals characterized by transmission electron microscopy and Raman spectroscopy. Field-effect transistors were fabricated on these WSe2 flakes, and the field effect mobility was measured to be 11.0 cm2 V-1 s-1 and an on/off ratio of ˜106 was achieved. The growth of highly patterned WSe2 flake arrays facilitates the fabrication of WSe2 flake-based integrated devices.

  20. Strain and Electrical Characterization of Boron-Doped SiGeC Layers Grown by Chemical Vapor Deposition

    NASA Astrophysics Data System (ADS)

    Hållstedt, J.; Parent, A.; Zhang, S.-L.; Östling, M.; Radamson, H. H.

    2004-01-01

    Incorporation, induced strain and electrical properties of boron and carbon in Si1 x yGexCy epitaxial layers (x = 0.23 and 0.28 with y = 0 and 0.005) grown by chemical vapour deposition (CVD) have been studied. The boron concentration in the epitaxial layers was in the range of 3 × 1018 1 × 1021cm 3. The growth rate enhanced weakly by increasing boron partial pressure up to 0.002 mtorr corresponding to 2 × 1019cm 3 where a significant increase in deposition rate was observed. In SiGeC layers, the active boron concentration was obtained from the strain compensation amount. It was also found that the boron atoms have a tendency to locate at substitutional sites more preferentially compared to carbon. The incorporation of boron in SiGeC layers was clearly improved in the range 2 × 1019 3 × 1020cm 3. These investigations also enabled an estimation of the Hall scattering factor of the SiGeC layers. A comparison between our results with the previous theoretical calculations showed a good agreement. This created the possibility to evaluate the drift mobility in our samples.

  1. Optical Diagnostics in the Combustion Chemical Vapor Deposition Proces

    NASA Astrophysics Data System (ADS)

    Luten, Henry; Oljaca, Miodrag; Tomov, Trifon; Metzger, Timothy

    1999-11-01

    Optical emission spectroscopy and IR temperature measurements are used to investigate the structure of a sub-micron droplet spray flame in the Combustion Chemical Vapor Deposition (CCVD) process. The specific system examined in this study is the deposition of barium-strontium-titanate (BaxSr1-xTiO3), a high performance ferroelectric. Spectral measurements were used to determine the decomposition rates of the precursors as well as the lifetimes and relative concentrations of the primary decomposition products. The emissions from atomic and unimolecular species reach a maximum value early in the flame and then decrease sharply, indicating very fast reaction rates. This data, however, is a function of the flame temperature. In order to arrive at proper relative concentration data, the optical emission data must be normalized using measured temperature. Two-dimensional temperature maps were obtained using a non-contact, infrared temperature sensor with peak sensitivity at 4.5 microns. It was found that the sodium emission intensity correlates with the flame temperature, and the sodium emission was used as an internal standard for removing the temperature factor and isolating the relative concentration data. While the flame temperature reaches maximum value at approximately 2 cm, the normalized emission for most species reaches peak intensity closer to the nozzle exit.

  2. Testing of Wrought Iridium/Chemical Vapor Deposition Rhenium Rocket

    NASA Technical Reports Server (NTRS)

    Reed, Brian D.; Schneider, Steven J.

    1996-01-01

    A 22-N class, iridium/rhenium (Ir/Re) rocket chamber, composed of a thick (418 miocrometer) wrought iridium (Ir) liner and a rhenium substrate deposited via chemical vapor deposition, was tested over an extended period on gaseous oxygen/gaseous hydrogen (GO2/GH2) propellants. The test conditions were designed to produce species concentrations similar to those expected in an Earth-storable propellant combustion environment. Temperatures attained in testing were significantly higher than those expected with Earth-storable propellants, both because of the inherently higher combustion temperature of GO2/GH2 propellants and because the exterior surface of the rocket was not treated with a high-emissivity coating that would be applied to flight class rockets. Thus the test conditions were thought to represent a more severe case than for typical operational applications. The chamber successfully completed testing (over 11 hr accumulated in 44 firings), and post-test inspections showed little degradation of the Ir liner. The results indicate that use of a thick, wrought Ir liner is a viable alternative to the Ir coatings currently used for Ir/Re rockets.

  3. Chemical Vapor Deposition of an Organic Magnet, Vanadium Tetracyanoethylene

    PubMed Central

    Harberts, Megan; Lu, Yu; Yu, Howard; Epstein, Arthur J.; Johnston-Halperin, Ezekiel

    2015-01-01

    Recent progress in the field of organic materials has yielded devices such as organic light emitting diodes (OLEDs) which have advantages not found in traditional materials, including low cost and mechanical flexibility. In a similar vein, it would be advantageous to expand the use of organics into high frequency electronics and spin-based electronics. This work presents a synthetic process for the growth of thin films of the room temperature organic ferrimagnet, vanadium tetracyanoethylene (V[TCNE]x, x~2) by low temperature chemical vapor deposition (CVD). The thin film is grown at <60 °C, and can accommodate a wide variety of substrates including, but not limited to, silicon, glass, Teflon and flexible substrates. The conformal deposition is conducive to pre-patterned and three-dimensional structures as well. Additionally this technique can yield films with thicknesses ranging from 30 nm to several microns. Recent progress in optimization of film growth creates a film whose qualities, such as higher Curie temperature (600 K), improved magnetic homogeneity, and narrow ferromagnetic resonance line-width (1.5 G) show promise for a variety of applications in spintronics and microwave electronics. PMID:26168285

  4. Chemical vapor deposition coatings for oxidation protection of titanium alloys

    NASA Technical Reports Server (NTRS)

    Cunnington, G. R.; Robinson, J. C.; Clark, R. K.

    1991-01-01

    Results of an experimental investigation of the oxidation protection afforded to Ti-14Al-21Nb and Ti-14Al-23Nb-2V titanium aluminides and Ti-17Mo-3Al-3Nb titanium alloy by aluminum-boron-silicon and boron-silicon coatings are presented. These coatings are applied by a combination of physical vapor deposition (PVD) and chemical vapor deposition (CVD) processes. The former is for the application of aluminum, and the latter is for codeposition of boron and silicon. Coating thickness is in the range of 2 to 7 microns, and coating weights are 0.6 to 2.0 mg/sq cm. Oxidation testing was performed in air at temperatures to 1255 K in both static and hypersonic flow environments. The degree of oxidation protection provided by the coatings is determined from weight change measurements made during the testing and post test compositional analyses. Temperature-dependent total normal emittance data are also presented for four coating/substrate combinations. Both types of coatings provided excellent oxidation protection for the exposure conditions of this investigation. Total normal emittances were greater than 0.80 in all cases.

  5. Thirty Gigahertz Optoelectronic Mixing in Chemical Vapor Deposited Graphene.

    PubMed

    Montanaro, Alberto; Mzali, Sana; Mazellier, Jean-Paul; Bezencenet, Odile; Larat, Christian; Molin, Stephanie; Morvan, Loïc; Legagneux, Pierre; Dolfi, Daniel; Dlubak, Bruno; Seneor, Pierre; Martin, Marie-Blandine; Hofmann, Stephan; Robertson, John; Centeno, Alba; Zurutuza, Amaia

    2016-05-11

    The remarkable properties of graphene, such as broadband optical absorption, high carrier mobility, and short photogenerated carrier lifetime, are particularly attractive for high-frequency optoelectronic devices operating at 1.55 μm telecom wavelength. Moreover, the possibility to transfer graphene on a silicon substrate using a complementary metal-oxide-semiconductor-compatible process opens the ability to integrate electronics and optics on a single cost-effective chip. Here, we report an optoelectronic mixer based on chemical vapor-deposited graphene transferred on an oxidized silicon substrate. Our device consists in a coplanar waveguide that integrates a graphene channel, passivated with an atomic layer-deposited Al2O3 film. With this new structure, 30 GHz optoelectronic mixing in commercially available graphene is demonstrated for the first time. In particular, using a 30 GHz intensity-modulated optical signal and a 29.9 GHz electrical signal, we show frequency downconversion to 100 MHz. These results open promising perspectives in the domain of optoelectronics for radar and radio-communication systems.

  6. Chemical Vapor Deposition of an Organic Magnet, Vanadium Tetracyanoethylene.

    PubMed

    Harberts, Megan; Lu, Yu; Yu, Howard; Epstein, Arthur J; Johnston-Halperin, Ezekiel

    2015-07-03

    Recent progress in the field of organic materials has yielded devices such as organic light emitting diodes (OLEDs) which have advantages not found in traditional materials, including low cost and mechanical flexibility. In a similar vein, it would be advantageous to expand the use of organics into high frequency electronics and spin-based electronics. This work presents a synthetic process for the growth of thin films of the room temperature organic ferrimagnet, vanadium tetracyanoethylene (V[TCNE]x, x~2) by low temperature chemical vapor deposition (CVD). The thin film is grown at <60 °C, and can accommodate a wide variety of substrates including, but not limited to, silicon, glass, Teflon and flexible substrates. The conformal deposition is conducive to pre-patterned and three-dimensional structures as well. Additionally this technique can yield films with thicknesses ranging from 30 nm to several microns. Recent progress in optimization of film growth creates a film whose qualities, such as higher Curie temperature (600 K), improved magnetic homogeneity, and narrow ferromagnetic resonance line-width (1.5 G) show promise for a variety of applications in spintronics and microwave electronics.

  7. Selected area chemical vapor deposition of thin films for conductometric microelectronic chemical sensors

    NASA Astrophysics Data System (ADS)

    Majoo, Sanjeev

    Recent advances in microelectronics and silicon processing have been exploited to fabricate miniaturized chemical sensors. Although the capability of chemical sensing technology has grown steadily, it has been outpaced by the increasing demands for more reliable, inexpensive, and selective sensors. The diversity of applications requires the deployment of different sensing materials that have rich interfacial chemistry. However, several promising sensor materials are often incompatible with silicon micromachining and their deposition requires complicated masking steps. The new approach described here is to first micromachine a generic, instrumented, conductometric, microelectronic sensor platform that is fully functional except for the front-end sensing element. This generic platform contains a thin dielectric membrane, an integrated boron-doped silicon heater, and conductance electrodes. The membrane has low thermal mass and excellent thermal isolation. A proprietary selected-area chemical vapor deposition (SACVD) process in a cold-wall reactor at low pressures was then used to achieve maskless, self-lithographic deposition of thin films. The temperature-programmable integrated microheater initiates localized thermal decomposition/reaction of suitable CVD precursors confined to a small heated area (500 mum in diameter), and this creates the active sensing element. Platinum and titania (TiOsb2) films were deposited from pyrolysis of organometallic precursors, tetrakistrifluorophosphine platinum Pt(PFsb3)sb4 and titanium tetraisopropoxide Ti(OCH(CHsb3)sb2rbrack sb4, respectively. Deposition of gold metal films from chlorotriethylphosphine gold (Csb2Hsb5)sb3PAuCl precursor was also attempted but without success. The conductance electrodes permit in situ monitoring of film growth. The as-deposited films were characterized in situ by conductance measurements and optical microscopy and ex situ by electron microscopy and spectroscopy methods. Devices equipped with

  8. High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Vohra, Yogesh K. (Inventor); McCauley, Thomas S. (Inventor)

    1997-01-01

    The deposition of high quality diamond films at high linear growth rates and substrate temperatures for microwave-plasma chemical vapor deposition is disclosed. The linear growth rate achieved for this process is generally greater than 50 .mu.m/hr for high quality films, as compared to rates of less than 5 .mu.m/hr generally reported for MPCVD processes.

  9. Electrochromic Devices Deposited on Low-Temperature Plastics by Plasma-Enhanced Chemical Vapor Deposition

    SciTech Connect

    Robbins, Joshua; Seman, Michael

    2005-09-20

    Electrochromic windows have been identified by the Basic energy Sciences Advisory committee as an important technology for the reduction of energy spent on heating and cooling in residential and commercial buildings. Electrochromic devices have the ability to reversibly alter their optical properties in response to a small electric field. By blocking ultraviolet and infrared radiation, while modulating the incoming visible radiation, electrochromics could reduce energy consumption by several Quads per year. This amounts to several percent of the total annual national energy expenditures. The purpose of this project was to demonstrate proof of concept for using plasma-enhanced chemical vapor deposition (PECVD) for depositing all five layers necessary for full electrochromic devices, as an alternative to sputtering techniques. The overall goal is to produce electrochromic devices on flexible polymer substrates using PECVD to significantly reduce the cost of the final product. We have successfully deposited all of the films necessary for a complete electrochromic devices using PECVD. The electrochromic layer, WO3, displayed excellent change in visible transmission with good switching times. The storage layer, V2O5, exhibited a high storage capacity and good clear state transmission. The electrolyte, Ta2O5, was shown to functional with good electrical resistivity to go along with the ability to transfer Li ions. There were issues with leakage over larger areas, which can be address with further process development. We developed a process to deposit ZnO:Ga with a sheet resistance of < 50 W/sq. with > 90% transmission. Although we were not able to deposit on polymers due to the temperatures required in combination with the inverted position of our substrates. Two types of full devices were produced. Devices with Ta2O5 were shown to be functional using small aluminum dots as the top contact. The polymer electrolyte devices were shown to have a clear state transmission of

  10. Plasma-enhanced chemical vapor deposition of tungsten films

    NASA Astrophysics Data System (ADS)

    Chu, J. K.; Tang, C. C.; Hess, D. W.

    1982-07-01

    High-purity films of tungsten are deposited from tungsten hexafluoride and hydrogen using plasma-enhanced deposition (PED). At 400 °C deposition temperature, resistivities of ˜40 μΩ cm are attained. After annealing at 1100 °C, the resistivity falls to ˜7 μΩ cm. Below 400 °C, the as-deposited film stress is <6×109 dynes/cm2. Tensile, unlike tungsten, molybdenum films deposited by PED displayed high resistivities.

  11. Chemical vapor deposited fiber coatings and chemical vapor infiltrated ceramic matrix composites

    SciTech Connect

    Kmetz, M.A.

    1992-01-01

    Conventional Chemical Vapor Deposition (CVD) and Organometallic Chemical Vapor Deposition (MOCVD) were employed to deposit a series of interfacial coatings on SiC and carbon yarn. Molybdenum, tungsten and chromium hexacarbonyls were utilized as precursors in a low temperature (350[degrees]C) MOCVD process to coat SiC yarn with Mo, W and Cr oxycarbides. Annealing studies performed on the MoOC and WOC coated SiC yarns in N[sub 2] to 1,000[degrees]C establish that further decomposition of the oxycarbides occurred, culminating in the formation of the metals. These metals were then found to react with Si to form Mo and W disilicide coatings. In the Cr system, heating in N[sub 2] above 800[degrees]C resulted in the formation of a mixture of carbides and oxides. Convention CVD was also employed to coat SiC and carbon yarn with C, Bn and a new interface designated BC (a carbon-boron alloy). The coated tows were then infiltrated with SiC, TiO[sub 2], SiO[sub 2] and B[sub 4]C by a chemical vapor infiltration process. The B-C coatings were found to provide advantageous interfacial properties over carbon and BN coatings in several different composite systems. The effectiveness of these different coatings to act as a chemically inert barrier layer and their relationship to the degree of interfacial debonding on the mechanical properties of the composites were examined. The effects of thermal stability and strength of the coated fibers and composites were also determined for several difference atmospheres. In addition, a new method for determining the tensile strength of the as-received and coated yarns was also developed. The coated fibers and composites were further characterized by AES, SEM, XPS, IR and X-ray diffraction analysis.

  12. A chemical kinetic model for chemical vapor deposition of carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Raji, K.; Thomas, Shijo; Sobhan, C. B.

    2011-10-01

    Carbon nanotubes (CNTs) are classified among the most promising novel materials due to their exceptional physical properties. Still, optimal fabrication of carbon nanotubes involves a number of challenges. Whatever be the fabrication method, a process optimization can be evolved only on the basis of a good theoretical model to predict the parametric influences on the final product. The work reported here investigates the dependence of the deposition parameters on the controllable parameters for carbon nanotube growth during Chemical vapor deposition (CVD), through a chemical kinetic model. The theoretical model consisted of the design equations and the energy balance equations, based on the reaction kinetics, for the plug flow and the batch reactor, which simulate the CVD system. The numerical simulation code was developed in-house in a g++ environment. The results predicted the growth conditions for CNT: the deposition temperature, pressure and number of atoms, which were found to be influenced substantially by the initial controllable parameters namely the temperature, volumetric flow rate of the carbon precursor, and the reaction time. An experimental study was also conducted on a CVD system developed in the laboratory, to benchmark the computational results. The experimental results were found to agree well with the theoretical predictions obtained from the model.

  13. Antireflective silica nanoparticle array directly deposited on flexible polymer substrates by chemical vapor deposition.

    PubMed

    Yun, Jungheum; Bae, Tae-Sung; Kwon, Jung-Dae; Lee, Sunghun; Lee, Gun-Hwan

    2012-11-21

    We report the direct coating of a novel antireflective (AR) nanoarray structure of silica nanoparticles on highly flexible polymer substrates by a conventional vacuum coating method using plasma-enhanced chemical vapor deposition. Globular-shaped silica nanoparticles are found to be self-arranged in a periodic pattern on subwavelength scales without the use of artificial assemblies that typically require complicated nanolithography or solution-based nanoparticle fabrication approaches. Highly efficient AR characteristics in the visible spectral range are obtained at optimized refractive indices by controlling the dimensions and average distances of the silica nanoparticle arrays in a level accuracy of tens of nanometers. The AR nanoarrays exhibit sufficient structural durability against the very high strain levels that arise from the flexibility of polymer substrates. This simple coating process provides a cost-effective, high-throughput, room-temperature fabrication solution for producing large-area polymer substrates with AR characteristics.

  14. Perovskite tungsten bronze-type crystals of Li{sub x}WO{sub 3} grown by chemical vapour transport and their characterisation

    SciTech Connect

    Ruescher, Claus H. Dey, Kalpana R.; Debnath, Tapas; Horn, Ingo; Glaum, Robert; Hussain, Altaf

    2008-01-15

    Crystals of Li{sub x}WO{sub 3} with nominal compositions, x=0.1, 0.25, 0.3, 0.35, 0.4 and 0.45 were grown by chemical vapour transport method using HgCl{sub 2} as transporting agent. A complete transport was achieved with a temperature gradient T{sub 1}/T{sub 2}=800/700 deg. C revealing bluish-black crystals of sizes up to a few 10th of a millimeter. X-ray powder diffraction and infrared (IR) absorption spectra show Perovskite tungsten bronze of cubic symmetry (PTB{sub c}) for x=0.45 and 0.4, mixed phase of PTB{sub c} and Perovskite tungsten bronze of tetragonal symmetry (PTB{sub t}) for x=0.35, 0.3 and 0.25 and of PTB{sub t} and Perovskite tungsten bronze of orthorhombic symmetry (PTB{sub o}) for x=0.1. The structure of PTB{sub t} is explained by the off centring of the W-ions along c and tilting of the WO{sub 6} octahedra around c. Crystal slices of mixed phase (i.e. PTB{sub c} and PTB{sub t}) reveal bright and dark areas on a sub-millimeter scale which are separated by sharp interfaces. Laser ablation inductively coupled plasma optical emission (LA ICP OES) analysis on small spot sizes show the separation into Li contents of x=0.18 (bright areas) and x=0.38 (dark areas) as threshold compositions of PTB{sub t} and PTB{sub c}, respectively. Polarized reflectivity using a microscope technique in the bright area of the crystals indicates strong anisotropic absorption effects with maximum between 1000 and 6000 cm{sup -1}, which are related to optical excitations of polarons. Crystals of composition x=0.4 and 0.45 appear optically homogeneous and show an effective 'free carrier-type plasma frequency' (w{sub p}) of about 12,900 and 13,700 cm{sup -1}, respectively. - Graphical abstract: Optical microscope image (reflection mode) of Li{sub x}WO{sub 3} crystals of nominal composition x=0.35. The separation into PTB{sub cubic} (dark areas) and PTB{sub tetragonal} (bright areas) were used to determine the miscibility gap and optical properties.

  15. Deposition barium titanate (BaTiO3) doped lanthanum with chemical solution deposition

    NASA Astrophysics Data System (ADS)

    Iriani, Y.; Jamaludin, A.; Nurhadi, N.

    2016-11-01

    Deposition of Barium Titanate (BaTiO3) thin films used Chemical Solution Deposition (CSD) method and prepared with spin coater. BaTiO3 is doped with lanthanum, 1%, 2%, and 3%. The thermal process use annealing temperature 900°C and holding time for 3 hours. The result of characterization with x-ray diffraction (XRD) equipment show that the addition of La3+ doped on Barium Titanate caused the change of angle diffraction.The result of refine with GSAS software shows that lanthanum have been included in the structure of BaTiO3. Increasing mol dopant La3+ cause lattice parameter and crystal volume become smaller. Characterization result using Scanning Electron Microscopy (SEM) equipment show that grain size (grain size) become smaller with increasing mole dopant (x) La3+. The result of characterization using Sawyer Tower methods show that all the samples (Barium Titanante and Barium Titanate doped lanthanum) are ferroelectric material. Increasing of mole dopant La3+ cause smaller coercive field and remanent polarization increases.

  16. Formation of amorphous metal alloys by chemical vapor deposition

    DOEpatents

    Mullendore, Arthur W.

    1990-01-01

    Amorphous alloys are deposited by a process of thermal dissociation of mixtures or organometallic compounds and metalloid hydrides, e.g., transition metal carbonyl such as nickel carbonyl, and diborane. Various sizes and shapes of deposits can be achieved, including near-net-shape free standing articles, multilayer deposits, and the like. Manipulation or absence of a magnetic field affects the nature and the structure of the deposit.

  17. Formation of amorphous metal alloys by chemical vapor deposition

    DOEpatents

    Mullendore, A.W.

    1988-03-18

    Amorphous alloys are deposited by a process of thermal dissociation of mixtures of organometallic compounds and metalloid hydrides,e.g., transition metal carbonyl, such as nickel carbonyl and diborane. Various sizes and shapes of deposits can be achieved, including near-net-shape free standing articles, multilayer deposits, and the like. Manipulation or absence of a magnetic field affects the nature and the structure of the deposit. 1 fig.

  18. Growth of graphene underlayers by chemical vapor deposition

    SciTech Connect

    Fabiane, Mopeli; Khamlich, Saleh; Bello, Abdulhakeem; Dangbegnon, Julien; Momodu, Damilola; Manyala, Ncholu; Charlie Johnson, A. T.

    2013-11-15

    We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.

  19. Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond

    SciTech Connect

    Zubkov, V. I. Kucherova, O. V.; Zubkova, A. V.; Ilyin, V. A.; Afanas'ev, A. V.; Bogdanov, S. A.; Vikharev, A. L.; Butler, J. E.

    2015-10-14

    Precision admittance spectroscopy measurements over wide temperature and frequency ranges were carried out for chemical vapor deposition epitaxial diamond samples doped with various concentrations of boron. It was found that the experimentally detected boron activation energy in the samples decreased from 314 meV down to 101 meV with an increase of B/C ratio from 600 to 18000 ppm in the gas reactants. For the heavily doped samples, a transition from thermally activated valence band conduction to hopping within the impurity band (with apparent activation energy 20 meV) was detected at temperatures 120–150 K. Numerical simulation was used to estimate the impurity DOS broadening. Accurate determination of continuously altering activation energy, which takes place during the transformation of conduction mechanisms, was proposed by numerical differentiation of the Arrhenius plot. With increase of boron doping level the gradual decreasing of capture cross section from 3 × 10{sup −13} down to 2 × 10{sup −17} cm{sup 2} was noticed. Moreover, for the hopping conduction the capture cross section becomes 4 orders of magnitude less (∼2 × 10{sup −20} cm{sup 2}). At T > T{sub room} in doped samples the birth of the second conductance peak was observed. We attribute it to a defect, related to the boron doping of the material.

  20. Chemical vapor deposition of high T sub c superconductors

    NASA Technical Reports Server (NTRS)

    Webb, G. W.; Engelhardt, J. J.

    1978-01-01

    The results are reported of an investigation into the synthesis and properties of high temperature superconducting materials. A chemical vapor deposition apparatus was designed and built which is suitable for the preparation of multicomponent metal films This apparatus was used to prepare a series of high T sub c A-15 structure superconducting films in the binary system Nb-Ge. The effect on T sub c of a variety of substrate materials was investigated. An extensive series of ternary alloys were also prepared. Conditions allowing the brittle high T sub c (approximately 18 K) A-15 structure superconductor Nb3A1 to be prepared in a low T sub c but ductile form were found. Some of the ways that the ductile (bcc) form can be cold worked or machined are described. Measurements of rate of transformation of cold worked bcc material to the high T sub c A-15 structure with low temperature annealing are given. Preliminary measurements indicate that this material has attractive high field critical current densities.

  1. Growth of graphene underlayers by chemical vapor deposition

    SciTech Connect

    Fabiane, Mopeli; Khamlich, Saleh; Bello, Abdulhakeem; Dangbegnon, Julien; Momodu, Damilola; Manyala, Ncholu; Charlie Johnson, A. T.

    2013-11-15

    We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.

  2. Carbon-assisted chemical vapor deposition of hexagonal boron nitride

    NASA Astrophysics Data System (ADS)

    Ismach, Ariel; Chou, Harry; Mende, Patrick; Dolocan, Andrei; Addou, Rafik; Aloni, Shaul; Wallace, Robert; Feenstra, Randall; Ruoff, Rodney S.; Colombo, Luigi

    2017-06-01

    We show that in a low-pressure chemical vapor deposition (CVD) system, the residual oxygen and/or air play a crucial role in the mechanism of the growth of hexagonal boron nitride (h-BN) films on Ni foil ‘enclosures’. Hexagonal-BN films grow on the Ni foil surface via the formation of an intermediate boric-oxide (BO x ) phase followed by a thermal reduction of the BO x by a carbon source (either amorphous carbon powder or methane), leading to the formation of single- and bi-layer h-BN. Low energy electron microscopy (LEEM) and diffraction (LEED) were used to map the number of layers over large areas; Raman spectroscopy, time-of-flight secondary ion mass spectrometry (ToF-SIMS), x-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM) were used to characterize the structure and physical quality of the ultra-thin h-BN film. The growth procedure reported here leads to a better understanding and control of the synthesis of ultra-thin h-BN films.

  3. Chemical vapor deposited silica coatings for solar mirror protection

    NASA Technical Reports Server (NTRS)

    Gulino, Daniel A.; Dever, Therese M.; Banholzer, William F.

    1988-01-01

    A variety of techniques is available to apply protective coatings to oxidation susceptible spacecraft components, and each has associated advantages and disadvantages. Film applications by means of chemical vapor deposition (CVD) has the advantage of being able to be applied conformally to objects of irregular shape. For this reason, a study was made of the oxygen plasma durability of thin film (less than 5000 A) silicon dioxide coatings applied by CVD. In these experiments, such coatings were applied to silver mirrors, which are strongly subject to oxidation, and which are proposed for use on the space station solar dynamic power system. Results indicate that such coatings can provide adequate protection without affecting the reflectance of the mirror. Scanning electron micrographs indicated that oxidation of the silver layer did occur at stress crack locations, but this did not affect the measured solar reflectances. Oxidation of the silver did not proceed beyond the immediate location of the crack. Such stress cracks did not occur in thinner silica flims, and hence such films would be desirable for this application.

  4. Chemical vapor deposited silica coatings for solar mirror protection

    NASA Technical Reports Server (NTRS)

    Gulino, Daniel A.; Dever, Therese M.; Banholzer, William F.

    1988-01-01

    A variety of techniques is available to apply protective coatings to oxidation susceptible spacecraft components, and each has associated advantages and disadvantages. Film applications by means of chemical vapor deposition (CVD) has the advantage of being able to be applied conformally to objects of irregular shape. For this reason, a study was made of the oxygen plasma durability of thin film (less than 5000 A) silicon dioxide coatings applied by CVD. In these experiments, such coatings were applied to silver mirrors, which are strongly subject to oxidation, and which are proposed for use on the space station solar dynamic power system. Results indicate that such coatings can provide adequate protection without affecting the reflectance of the mirror. Scanning electron micrographs indicated that oxidation of the silver layer did occur at stress crack locations, but this did not affect the measured solar reflectances. Oxidation of the silver did not proceed beyond the immediate location of the crack. Such stress cracks did not occur in thinner silica films, and hence such films would be desirable for this application.

  5. High surface area graphene foams by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Drieschner, Simon; Weber, Michael; Wohlketzetter, Jörg; Vieten, Josua; Makrygiannis, Evangelos; Blaschke, Benno M.; Morandi, Vittorio; Colombo, Luigi; Bonaccorso, Francesco; Garrido, Jose A.

    2016-12-01

    Three-dimensional (3D) graphene-based structures combine the unique physical properties of graphene with the opportunity to get high electrochemically available surface area per unit of geometric surface area. Several preparation techniques have been reported to fabricate 3D graphene-based macroscopic structures for energy storage applications such as supercapacitors. Although reaserch has been focused so far on achieving either high specific capacitance or high volumetric capacitance, much less attention has been dedicated to obtain high specific and high volumetric capacitance simultaneously. Here, we present a facile technique to fabricate graphene foams (GF) of high crystal quality with tunable pore size grown by chemical vapor deposition. We exploited porous sacrificial templates prepared by sintering nickel and copper metal powders. Tuning the particle size of the metal powders and the growth temperature allow fine control of the resulting pore size of the 3D graphene-based structures smaller than 1 μm. The as-produced 3D graphene structures provide a high volumetric electric double layer capacitance (165 mF cm-3). High specific capacitance (100 Fg-1) is obtained by lowering the number of layers down to single layer graphene. Furthermore, the small pore size increases the stability of these GFs in contrast to the ones that have been grown so far on commercial metal foams. Electrodes based on the as-prepared GFs can be a boost for the development of supercapacitors, where both low volume and mass are required.

  6. Residual metallic contamination of transferred chemical vapor deposited graphene.

    PubMed

    Lupina, Grzegorz; Kitzmann, Julia; Costina, Ioan; Lukosius, Mindaugas; Wenger, Christian; Wolff, Andre; Vaziri, Sam; Östling, Mikael; Pasternak, Iwona; Krajewska, Aleksandra; Strupinski, Wlodek; Kataria, Satender; Gahoi, Amit; Lemme, Max C; Ruhl, Guenther; Zoth, Guenther; Luxenhofer, Oliver; Mehr, Wolfgang

    2015-05-26

    Integration of graphene with Si microelectronics is very appealing by offering a potentially broad range of new functionalities. New materials to be integrated with the Si platform must conform to stringent purity standards. Here, we investigate graphene layers grown on copper foils by chemical vapor deposition and transferred to silicon wafers by wet etching and electrochemical delamination methods with respect to residual submonolayer metallic contaminations. Regardless of the transfer method and associated cleaning scheme, time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence measurements indicate that the graphene sheets are contaminated with residual metals (copper, iron) with a concentration exceeding 10(13) atoms/cm(2). These metal impurities appear to be partially mobile upon thermal treatment, as shown by depth profiling and reduction of the minority charge carrier diffusion length in the silicon substrate. As residual metallic impurities can significantly alter electronic and electrochemical properties of graphene and can severely impede the process of integration with silicon microelectronics, these results reveal that further progress in synthesis, handling, and cleaning of graphene is required to advance electronic and optoelectronic applications.

  7. Preparation of hydrosol suspensions of elemental and core-shell nanoparticles by co-deposition with water vapour from the gas-phase in ultra-high vacuum conditions

    NASA Astrophysics Data System (ADS)

    Binns, Chris; Prieto, Pilar; Baker, Stephen; Howes, Paul; Dondi, Ruggero; Burley, Glenn; Lari, Leonardo; Kröger, Roland; Pratt, Andrew; Aktas, Sitki; Mellon, John K.

    2012-09-01

    We report a new method to produce liquid suspensions of nanoparticles by co-deposition with water vapour from the gas-phase in ultra-high vacuum (UHV) conditions. The water is injected from outside the vacuum as a molecular beam onto a substrate maintained at 77 K and forms an ice layer with a UHV vapour pressure. Molecular dynamics simulations confirm that the nanoparticles are soft-landed close to the surface of the growing ice layer. We show that the un-agglomerated size distribution within the liquid is similar to the gas-phase size distribution and demonstrate that the inclusion of surfactants in the injected water prevents agglomeration. The method allows the flexibility and tight size control available with gas-phase production methods to be applied to making nanoparticle suspensions with any desired properties. This is important for practical applications, especially in medicine. We have extended the method to include core-shell nanoparticles, in which there is flexible control over the core size and shell thickness and free choice of the material in either. Here, we report the production of suspensions of Cu, Ag and Au elemental nanoparticles and Fe@Au and Fe@Fe-oxide core-shell nanoparticles with diameters in the range 5-15 nm. We demonstrate the power of the method in practical applications in the case of Fe@Fe-oxide nanoparticles, which have a specific absorption rate of an applied oscillating magnetic field that is significantly higher than available Fe-oxide nanoparticle suspensions and the highest yet reported. These will thus have a very high-performance in the treatment of tumours by magnetic nanoparticle hyperthermia.

  8. Y-Ba-Cu-O film deposition by metal organic chemical vapor deposition on buffered metal substrates.

    SciTech Connect

    Selvamanickam, V.; Galinski, G.; DeFrank, J.; Trautwein, C.; Haldar, P.; Balachandran, U.; Lanagan, M.; Chudzik, M.

    1999-10-12

    YBa{sub 2}Cu{sub 3}O{sub 2} (YBCO) films have been deposited on buffered metal substrates by Metal Organic Chemical Vapor Deposition (MOCVD). Cube-textured nickel substrates were fabricated by a thermomechanical process. Epitaxial CeO{sub 2}films were deposited on these substrates by thermal evaporation. Nickel alloy substrates with biaxially-textured Yttria-Stabilized Zirconia (YSZ) buffer layers deposited by Ion Beam Assisted Deposition were also prepared. Highly biaxially-textured YBCO films were deposited by MOCVD on both types of metal substrates. A critical current density greater than 10{sup 5} A/cm{sup 2} at 77 K has been achieved in YBCO films on metal substrates.

  9. Synthesis, structure, vapour pressure and deposition of ZnO thin film by plasma assisted MOCVD technique using a novel precursor bis[(pentylnitrilomethylidine) (pentylnitrilomethylidine-μ-phenalato)]dizinc(II)

    NASA Astrophysics Data System (ADS)

    Chandrakala, C.; Sravanthi, P.; Raj Bharath, S.; Arockiasamy, S.; George Johnson, M.; Nagaraja, K. S.; Jeyaraj, B.

    2017-02-01

    A novel binuclear zinc schiff's base complex bis[(pentylnitrilomethylidine)(pentylnitrilomethylidine-μ-phenalato)]dizinc(II) (hereafter referred as ZSP) was prepared and used as a precursor for the deposition of ZnO thin film by MOCVD. The dynamic TG run of ZSP showed sufficient volatility and good thermal stability. The temperature dependence of vapour pressure measured by transpiration technique yielded a value of 55.8 ± 2.3 kJ mol-1 for the enthalpy of sublimation (ΔH°sub) in the temperature range of 423-503 K. The crystal structure of ZSP was solved by single crystal XRD which exhibits triclinic crystal system with the space group of Pī. The molecular mass of ZSP was determined by mass spectrometry which yielded the m/z value of 891 and 445 Da corresponding to its dimeric as well as monomeric form. The complex ZSP was further characterized by FT-IR and NMR. The demonstration of ZnO thin film deposition was carried out by using plasma assisted MOCVD. The thin film XRD confirmed the highly oriented (002) ZnO thin films on Si(100) substrate. The uniformity and composition of the thin film were analyzed by SEM/EDX. The band gap of ZnO thin film measurement indicated the blue shift with the value of 3.79 eV.

  10. Properties of chemical vapor infiltration diamond deposited in a diamond powder matrix

    SciTech Connect

    Panitz, J.K.G.; Tallant, D.R.; Hills, C.R.; Staley, D.J.

    1993-12-31

    Densifying non-mined diamond powder precursors with diamond produced by chemical vapor infiltration (CVI) is an attractive approach for forming thick diamond deposits that avoids many potential manufacturability problems associated with predominantly chemical vapor deposition (CVD) processes. The authors have developed two techniques: electrophoretic deposition and screen printing, to form nonmined diamond powder precursors on substrates. They then densify these precursors in a hot filament assisted reactor. Analysis indicated that a hot filament assisted chemical vapor infiltration process forms intergranular diamond deposits with properties that are to some degree different from predominantly hot-filament-assisted CVD material.

  11. Diagnostic for Plasma Enhanced Chemical Vapor Deposition and Etch Systems

    NASA Technical Reports Server (NTRS)

    Cappelli, Mark A.

    1999-01-01

    In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies ion the processing of semiconductor materials arising from understanding etch chemistries are being developed through a research collaboration between Stanford University and NASA-Ames Research Center, Although a great deal of laboratory-scale research has been performed on many of materials processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. In addition, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. The research described involves the study of plasmas used in semiconductor processes. An inductively coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics and chemistries. This ICP source generates plasmas with higher electron densities (approximately 10(exp 12)/cu cm) and lower operating pressures (approximately 7 mTorr) than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The motivation for this study is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas-phase and surface reaction rates. species

  12. Development of a new direct liquid injection system for nanoparticle deposition by chemical vapor deposition using nanoparticle solutions

    NASA Astrophysics Data System (ADS)

    Vervaele, Mattias; De Roo, Bert; Deschaume, Olivier; Rajala, Markku; Guillon, Herve; Sousa, Marilyne; Bartic, Carmen; Van Haesendonck, Chris; Seo, Jin Won; Locquet, Jean-Pierre

    2016-02-01

    Nanoparticles of different materials are already in use for many applications. In some applications, these nanoparticles need to be deposited on a substrate in a fast and reproducible way. We have developed a new direct liquid injection system for nanoparticle deposition by chemical vapor deposition using a liquid nanoparticle precursor. The system was designed to deposit nanoparticles in a controlled and reproducible way by using two direct liquid injectors to deliver nanoparticles to the system. The nanoparticle solution is first evaporated and then the nanoparticles flow onto a substrate inside the vacuum chamber. To allow injection and evaporation of the liquid, a direct liquid injection and vaporization system are mounted on top of the process chamber. The deposition of the nanoparticles is controlled by parameters such as deposition temperature, partial pressure of the gases, and flow rate of the nanoparticle suspension. The concentration of the deposited nanoparticles can be varied simply by changing the flow rate and deposition time. We demonstrate the capabilities of this system using gold nanoparticles. The selected suspension flow rates were varied between 0.25 and 1 g/min. AFM analysis of the deposited samples showed that the aggregation of gold nanoparticles is well controlled by the flow and deposition parameters.

  13. Experimental Study of Diamond Nucleation by Plasmon Assisted Chemical Vapor Deposition

    DTIC Science & Technology

    2012-05-18

    REPORT Final Technical Report for Proposal Number 59187MSDRP: Experimental Study of Diamond Nucleation by Plasmon Assisted Chemical Vapor Deposition 14...chemical vapor deposition , characterization of diamond nanoparticles, and direct conversion of the polymer poly(hydridocarbyne) to diamond. We adapted the...Raman spectroscopy. With the addition of the filament, we were able to observe carbon deposition and etching of amorphous carbon. We were 1. REPORT

  14. New H2SO4 and HSO3 vapour measurements in the stratosphere - Evidence for a volcanic influence

    NASA Astrophysics Data System (ADS)

    Arnold, F.; Buehrke, T.

    1983-01-01

    In situ measurements of stratospheric H2SO4 and HSO3 vapour concentrations using passive chemical ionization mass spectrometry were made in 1982 before and after the dramatic eruptions of the Mexican volcano El Chichon. Substantial increases of the total concentration of these gases over previously measured values were observed, particularly around 25 km altitude where most of the eruption cloud material was deposited. Implications for stratospheric SO2-oxidation and nucleation processes are discussed.

  15. Chemical Vapor-Deposited (CVD) Diamond Films for Electronic Applications

    NASA Technical Reports Server (NTRS)

    1995-01-01

    Diamond films have a variety of useful applications as electron emitters in devices such as magnetrons, electron multipliers, displays, and sensors. Secondary electron emission is the effect in which electrons are emitted from the near surface of a material because of energetic incident electrons. The total secondary yield coefficient, which is the ratio of the number of secondary electrons to the number of incident electrons, generally ranges from 2 to 4 for most materials used in such applications. It was discovered recently at the NASA Lewis Research Center that chemical vapor-deposited (CVD) diamond films have very high secondary electron yields, particularly when they are coated with thin layers of CsI. For CsI-coated diamond films, the total secondary yield coefficient can exceed 60. In addition, diamond films exhibit field emission at fields orders of magnitude lower than for existing state-of-the-art emitters. Present state-of-the-art microfabricated field emitters generally require applied fields above 5x10^7 V/cm. Research on field emission from CVD diamond and high-pressure, high-temperature diamond has shown that field emission can be obtained at fields as low as 2x10^4 V/cm. It has also been shown that thin layers of metals, such as gold, and of alkali halides, such as CsI, can significantly increase field emission and stability. Emitters with nanometer-scale lithography will be able to obtain high-current densities with voltages on the order of only 10 to 15 V.

  16. Chemical Vapor-Deposited (CVD) Diamond Films for Electronic Applications

    NASA Technical Reports Server (NTRS)

    1995-01-01

    Diamond films have a variety of useful applications as electron emitters in devices such as magnetrons, electron multipliers, displays, and sensors. Secondary electron emission is the effect in which electrons are emitted from the near surface of a material because of energetic incident electrons. The total secondary yield coefficient, which is the ratio of the number of secondary electrons to the number of incident electrons, generally ranges from 2 to 4 for most materials used in such applications. It was discovered recently at the NASA Lewis Research Center that chemical vapor-deposited (CVD) diamond films have very high secondary electron yields, particularly when they are coated with thin layers of CsI. For CsI-coated diamond films, the total secondary yield coefficient can exceed 60. In addition, diamond films exhibit field emission at fields orders of magnitude lower than for existing state-of-the-art emitters. Present state-of-the-art microfabricated field emitters generally require applied fields above 5x10^7 V/cm. Research on field emission from CVD diamond and high-pressure, high-temperature diamond has shown that field emission can be obtained at fields as low as 2x10^4 V/cm. It has also been shown that thin layers of metals, such as gold, and of alkali halides, such as CsI, can significantly increase field emission and stability. Emitters with nanometer-scale lithography will be able to obtain high-current densities with voltages on the order of only 10 to 15 V.

  17. Review of chemical vapor deposition of graphene and related applications.

    PubMed

    Zhang, Yi; Zhang, Luyao; Zhou, Chongwu

    2013-10-15

    Since its debut in 2004, graphene has attracted enormous interest because of its unique properties. Chemical vapor deposition (CVD) has emerged as an important method for the preparation and production of graphene for various applications since the method was first reported in 2008/2009. In this Account, we review graphene CVD on various metal substrates with an emphasis on Ni and Cu. In addition, we discuss important and representative applications of graphene formed by CVD, including as flexible transparent conductors for organic photovoltaic cells and in field effect transistors. Growth on polycrystalline Ni films leads to both monolayer and few-layer graphene with multiple layers because of the grain boundaries on Ni films. We can greatly increase the percentage of monolayer graphene by using single-crystalline Ni(111) substrates, which have smooth surface and no grain boundaries. Due to the extremely low solubility of carbon in Cu, Cu has emerged as an even better catalyst for the growth of monolayer graphene with a high percentage of single layers. The growth of graphene on Cu is a surface reaction. As a result, only one layer of graphene can form on a Cu surface, in contrast with Ni, where more than one layer can form through carbon segregation and precipitation. We also describe a method for transferring graphene sheets from the metal using polymethyl methacrylate (PMMA). CVD graphene has electronic properties that are potentially valuable in a number of applications. For example, few-layer graphene grown on Ni can function as flexible transparent conductive electrodes for organic photovoltaic cells. In addition, because we can synthesize large-grain graphene on Cu foil, such large-grain graphene has electronic properties suitable for use in field effect transistors.

  18. A liquid crystalline chirality balance for vapours

    NASA Astrophysics Data System (ADS)

    Ohzono, Takuya; Yamamoto, Takahiro; Fukuda, Jun-Ichi

    2014-04-01

    Chiral discrimination of vapours plays an important role in olfactory perception of biological systems and its realization by artificial sensors has been an intriguing challenge. Here, we report a simple method that tangibly visualizes the chirality of a diverse variety of molecules dissolved from vapours with high sensitivity, by making use of a structural change in a periodic microstructure of a nematic liquid crystal confined in open microchannels. This microstructure is accompanied by a topological line defect of a zigzag form with equal lengths of ‘zig’ and ‘zag.’ We find that a tiny amount of vapour of chiral molecules injected onto the liquid crystal induces the imbalance of ‘zig’ and ‘zag’ depending on its enantiomeric excess within a few seconds. Our liquid-crystal-based ‘chirality balance’ offers a simple, quick and versatile chirality-sensing/-screening method for gas-phase analysis (for example, for odours, environmental chemicals or drugs).

  19. A liquid crystalline chirality balance for vapours.

    PubMed

    Ohzono, Takuya; Yamamoto, Takahiro; Fukuda, Jun-ichi

    2014-04-30

    Chiral discrimination of vapours plays an important role in olfactory perception of biological systems and its realization by artificial sensors has been an intriguing challenge. Here, we report a simple method that tangibly visualizes the chirality of a diverse variety of molecules dissolved from vapours with high sensitivity, by making use of a structural change in a periodic microstructure of a nematic liquid crystal confined in open microchannels. This microstructure is accompanied by a topological line defect of a zigzag form with equal lengths of 'zig' and 'zag.' We find that a tiny amount of vapour of chiral molecules injected onto the liquid crystal induces the imbalance of 'zig' and 'zag' depending on its enantiomeric excess within a few seconds. Our liquid-crystal-based 'chirality balance' offers a simple, quick and versatile chirality-sensing/-screening method for gas-phase analysis (for example, for odours, environmental chemicals or drugs).

  20. Control of crystallite size in diamond film chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Moran, Mark B.; Johnson, Linda F.; Klemm, Karl A.

    1992-12-01

    In depositing an adhering, continuous, polycrystalline diamond film of optical or semiconductor quality on a substrate, as by forming on the substrate a layer of a refractory nitride interlayer and depositing diamond on the interlayer without mechanical treatment or seeding of the substrate or the interlayer, the substrate is heated in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon, and the size of deposited diamond crystallites and their rate of deposition selectively varied by a bias voltage applied to the substrate.

  1. Dependence of electro-optical properties on the deposition conditions of chemical bath deposited CdS thin films

    SciTech Connect

    Dona, J.M.; Herrero, J.

    1997-11-01

    Lately, there has been a sharp increase in the publication of papers on chemical bath deposition of CdS thin films and related materials due to successful results obtained using this method to fabricate CdS thin-film buffer layers for CuInSe{sub 2}- and CdTe-based polycrystalline thin-film solar cells. Generally, these papers focus on previously proposed methods of studying film characteristics without a systematic study of the influence of deposition conditions on film characteristics. In this paper the authors present an exhaustive study of the chemical bath-deposited CdS thin films electro-optical properties dependence on deposition variables. The authors propose not only a set of conditions for obtaining CdS thin films by this method but additionally, suitable deposition process conditions for certain application requirements, such as buffer layers for thin-film solar cells. The observed electro-optical characteristics dependence on the deposition variables corroborates the chemical mechanism that they proposed previously for this process.

  2. Magnetorheological finishing of chemical-vapor deposited zinc sulfide via chemically and mechanically modified fluids

    SciTech Connect

    Salzman, Sivan; Romanofsky, Henry J.; Giannechini, Lucca J.; Jacobs, Stephen D.; Lambropoulos, John C.

    2016-02-19

    In this study, we describe the anisotropy in the material removal rate (MRR) of the polycrystalline, chemical-vapor deposited zinc sulfide (ZnS).We define the polycrystalline anisotropy via microhardness and chemical erosion tests for four crystallographic orientations of ZnS: (100), (110), (111), and (311). Anisotropy in the MRR was studied under magnetorheological finishing (MRF) conditions. Three chemically and mechanically modified magnetorheological (MR) fluids at pH values of 4, 5, and 6 were used to test the MRR variations among the four single-crystal planes. When polishing the single-crystal planes and the polycrystalline with pH 5 and pH 6MR fluids, variations were found in the MRR among the four single-crystal planes and surface artifacts were observed on the polycrystalline material. When polishing the single-crystal planes and the polycrystalline with the modified MR fluid at pH 4, however, minimal variation was observed in the MRR among the four orientations and a reduction in surface artifacts was achieved on the polycrystalline material.

  3. Magnetorheological finishing of chemical-vapor deposited zinc sulfide via chemically and mechanically modified fluids

    DOE PAGES

    Salzman, Sivan; Romanofsky, Henry J.; Giannechini, Lucca J.; ...

    2016-02-19

    In this study, we describe the anisotropy in the material removal rate (MRR) of the polycrystalline, chemical-vapor deposited zinc sulfide (ZnS).We define the polycrystalline anisotropy via microhardness and chemical erosion tests for four crystallographic orientations of ZnS: (100), (110), (111), and (311). Anisotropy in the MRR was studied under magnetorheological finishing (MRF) conditions. Three chemically and mechanically modified magnetorheological (MR) fluids at pH values of 4, 5, and 6 were used to test the MRR variations among the four single-crystal planes. When polishing the single-crystal planes and the polycrystalline with pH 5 and pH 6MR fluids, variations were found inmore » the MRR among the four single-crystal planes and surface artifacts were observed on the polycrystalline material. When polishing the single-crystal planes and the polycrystalline with the modified MR fluid at pH 4, however, minimal variation was observed in the MRR among the four orientations and a reduction in surface artifacts was achieved on the polycrystalline material.« less

  4. Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

    PubMed Central

    Liao, Yu-Kuang; Liu, Yung-Tsung; Hsieh, Dan-Hua; Shen, Tien-Lin; Hsieh, Ming-Yang; Tzou, An-Jye; Chen, Shih-Chen; Tsai, Yu-Lin; Lin, Wei-Sheng; Chan, Sheng-Wen; Shen, Yen-Ping; Cheng, Shun-Jen; Chen, Chyong-Hua; Wu, Kaung-Hsiung; Chen, Hao-Ming; Kuo, Shou-Yi; Charlton, Martin D. B.; Hsieh, Tung-Po; Kuo, Hao-Chung

    2017-01-01

    Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new ”paradigm shift” non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs) with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD) and chemical bath deposition (CBD) as used by the Cu(In,Ga)Se2 (CIGS) thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase. PMID:28383488

  5. Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition.

    PubMed

    Liao, Yu-Kuang; Liu, Yung-Tsung; Hsieh, Dan-Hua; Shen, Tien-Lin; Hsieh, Ming-Yang; Tzou, An-Jye; Chen, Shih-Chen; Tsai, Yu-Lin; Lin, Wei-Sheng; Chan, Sheng-Wen; Shen, Yen-Ping; Cheng, Shun-Jen; Chen, Chyong-Hua; Wu, Kaung-Hsiung; Chen, Hao-Ming; Kuo, Shou-Yi; Charlton, Martin D B; Hsieh, Tung-Po; Kuo, Hao-Chung

    2017-04-06

    Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new "paradigm shift" non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs) with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD) and chemical bath deposition (CBD) as used by the Cu(In,Ga)Se₂ (CIGS) thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase.

  6. Comparison of InGaAs(100) Grown by Chemical Beam Epitaxy and Metal Organic Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Williams, M. D.; Greene, A. L.; Daniels-Race, T.; Lum, R. M.

    2000-01-01

    Secondary ion mass spectrometry is used to study the effects of substrate temperature on the composition and growth rate of InGaAs/InP(100) multilayers grown by chemical beam epitaxy, metal-organic chemical vapor deposition and solid source molecular beam epitaxy. The growth kinetics of the material grown by the different techniques are analyzed and compared.

  7. Comparison of InGaAs(100) Grown by Chemical Beam Epitaxy and Metal Organic Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Williams, M. D.; Greene, A. L.; Daniels-Race, T.; Lum, R. M.

    2000-01-01

    Secondary ion mass spectrometry is used to study the effects of substrate temperature on the composition and growth rate of InGaAs/InP(100) multilayers grown by chemical beam epitaxy, metal-organic chemical vapor deposition and solid source molecular beam epitaxy. The growth kinetics of the material grown by the different techniques are analyzed and compared.

  8. High rate chemical vapor deposition of carbon films using fluorinated gases

    DOEpatents

    Stafford, Byron L.; Tracy, C. Edwin; Benson, David K.; Nelson, Arthur J.

    1993-01-01

    A high rate, low-temperature deposition of amorphous carbon films is produced by PE-CVD in the presence of a fluorinated or other halide gas. The deposition can be performed at less than 100.degree. C., including ambient room temperature, with a radio frequency plasma assisted chemical vapor deposition process. With less than 6.5 atomic percent fluorine incorporated into the amorphous carbon film, the characteristics of the carbon film, including index of refraction, mass density, optical clarity, and chemical resistance are within fifteen percent (15%) of those characteristics for pure amorphous carbon films, but the deposition rates are high.

  9. Solar-induced chemical vapor deposition of diamond-type carbon films

    DOEpatents

    Pitts, J. Roland; Tracy, C. Edwin; King, David E.; Stanley, James T.

    1994-01-01

    An improved chemical vapor deposition method for depositing transparent continuous coatings of sp.sup.3 -bonded diamond-type carbon films, comprising: a) providing a volatile hydrocarbon gas/H.sub.2 reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and b) directing a concentrated solar flux of from about 40 to about 60 watts/cm.sup.2 through said reactant mixture to produce substrate temperatures of about 750.degree. C. to about 950.degree. C. to activate deposition of the film on said substrate.

  10. Solar-induced chemical vapor deposition of diamond-type carbon films

    DOEpatents

    Pitts, J.R.; Tracy, C.E.; King, D.E.; Stanley, J.T.

    1994-09-13

    An improved chemical vapor deposition method for depositing transparent continuous coatings of sp[sup 3]-bonded diamond-type carbon films, comprises: (a) providing a volatile hydrocarbon gas/H[sub 2] reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and (b) directing a concentrated solar flux of from about 40 to about 60 watts/cm[sup 2] through said reactant mixture to produce substrate temperatures of about 750 C to about 950 C to activate deposition of the film on said substrate. 11 figs.

  11. Low resistance tungsten films on GaAs deposited by means of rapid thermal low pressure chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Katz, A.; Feingold, A.; Nakahara, S.; Pearton, S. J.; Lane, E.

    1992-08-01

    Low resistance tungsten (W) films were deposited onto GaAs substrates by means of rapid thermal low pressure chemical vapor deposition (RT-LPCVD), using tungsten hexafluoride (WF6) gas reduced by hydrogen (H2). Deposition temperatures up to 550 °C for durations of up to 30 s were explored, resulting in deposition of relatively pure W films (containing less than 2% O2 and C). Post-deposition sintering of the layers led to significant reduction of the resistivity to values as low as 50 μΩ cm. The efficiency of the deposition improved upon increasing the H2 flow rate up to 1250 sccm resulting in a deposition rate of about 10 nm/s at a total chamber pressure of 3.5 Torr and temperature of 500 °C. The films appeared to be polycrystalline with a very fine grain structure, regardless of the deposition temperature with good morphology and underwent a limited reaction with the underlying GaAs substrates.

  12. Practical silicon deposition rules derived from silane monitoring during plasma-enhanced chemical vapor deposition

    SciTech Connect

    Bartlome, Richard De Wolf, Stefaan; Demaurex, Bénédicte; Ballif, Christophe; Amanatides, Eleftherios; Mataras, Dimitrios

    2015-05-28

    We clarify the difference between the SiH{sub 4} consumption efficiency η and the SiH{sub 4} depletion fraction D, as measured in the pumping line and the actual reactor of an industrial plasma-enhanced chemical vapor deposition system. In the absence of significant polysilane and powder formation, η is proportional to the film growth rate. Above a certain powder formation threshold, any additional amount of SiH{sub 4} consumed translates into increased powder formation rather than into a faster growing Si film. In order to discuss a zero-dimensional analytical model and a two-dimensional numerical model, we measure η as a function of the radio frequency (RF) power density coupled into the plasma, the total gas flow rate, the input SiH{sub 4} concentration, and the reactor pressure. The adjunction of a small trimethylboron flow rate increases η and reduces the formation of powder, while the adjunction of a small disilane flow rate decreases η and favors the formation of powder. Unlike η, D is a location-dependent quantity. It is related to the SiH{sub 4} concentration in the plasma c{sub p}, and to the phase of the growing Si film, whether the substrate is glass or a c-Si wafer. In order to investigate transient effects due to the RF matching, the precoating of reactor walls, or the introduction of a purifier in the gas line, we measure the gas residence time and acquire time-resolved SiH{sub 4} density measurements throughout the ignition and the termination of a plasma.

  13. Processing tungsten single crystal by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Xiao, Zhigang; Zee, Ralph H.; Begg, Lester L.

    2000-01-01

    A tungsten single crystal layer has been fabricated on molybdenum single crystal substrate through the hydrogen (H2) reduction of the tungsten hexafluoride (WF6) in low pressure. Substrate temperature, reaction chamber pressure, and flow rate of WF6 and H2, are critical process parameters during deposition. A comprehensive analysis for the effects of these parameters on single crystal layer growth has been processed and optimized growth conditions have been achieved. The different orientation of the substrate shows the different deposition rate for tungsten. Low index plane has higher deposition rate than high index plane. The kinetics of the deposition process has also been investigated. SEM surface analysis indicates that the single crystal layer is smooth in macro-scale and rough and step-growth format in micro-scale. .

  14. Numerical modeling of chemical vapor deposition (CVD) in a horizontal reactor

    NASA Technical Reports Server (NTRS)

    Sheikholeslami, M. Z.; Jasinski, T.; Fretz, K. W.

    1988-01-01

    In the present numerical prediction of the deposition rate of silicon from silane in a CVD process, the conservation equations for mass, momentum, energy, and chemical species are solved on a staggered grid using the SIMPLE algorithm, while the rate of chemical reactions in the gas phase and on the susceptor surface is obtained from an Arrhenius rate equation. Predicted deposition rates as a function of position along the susceptor with and without the gas phase chemical reaction are compared with the available experimental and numerical data; agreement is excellent except at the leading edge of the susceptor, where the deposition rate is overpredicted.

  15. Numerical modeling of chemical vapor deposition (CVD) in a horizontal reactor

    NASA Technical Reports Server (NTRS)

    Sheikholeslami, M. Z.; Jasinski, T.; Fretz, K. W.

    1988-01-01

    In the present numerical prediction of the deposition rate of silicon from silane in a CVD process, the conservation equations for mass, momentum, energy, and chemical species are solved on a staggered grid using the SIMPLE algorithm, while the rate of chemical reactions in the gas phase and on the susceptor surface is obtained from an Arrhenius rate equation. Predicted deposition rates as a function of position along the susceptor with and without the gas phase chemical reaction are compared with the available experimental and numerical data; agreement is excellent except at the leading edge of the susceptor, where the deposition rate is overpredicted.

  16. Water vapour variability and trends in the Arctic stratosphere

    NASA Astrophysics Data System (ADS)

    Thölix, Laura; Kivi, Rigel; Backman, Leif; Karpechko, Alexey

    2014-05-01

    Water vapour in the upper troposphere-lower stratosphere (UTLS) is a radiatively and chemically important trace gas. Stratospheric water vapour also affects ozone chemistry through odd-hydrogen chemistry and formation of polar stratospheric clouds (PSC). Both transport and chemistry contribute to the extratropical lower stratospheric water vapour distribution and trends. The main sources of stratospheric water vapour are intrusion through the tropical tropopause and production from oxidation of methane. Accurate observations of UTLS water vapour are difficult to obtain due to the strong gradient in the water vapour profile over the tropopause. However, modelling the stratospheric water vapour distribution is challenging and accurate measurements are needed for model validation. Trends in Arctic water vapour will be analysed and explained in terms of contribution from different processes (transport and chemistry), using observations and chemistry transport model (CTM) simulations. Accurate water vapour soundings from Sodankylä will be used to study water vapour within the Arctic polar vortex, including process studies on formation of PSCs and dehydration. Water vapour profiles measured during the LAPBIAT atmospheric sounding campaign in Sodankylä in January 2010 indicated formation of ice clouds and dehydration. Effects on ozone chemistry will also be studied. Global middle atmospheric simulations have been performed with the FinROSE-ctm using ERA-Interim winds and temperatures. The FinROSE-ctm is a global middle atmosphere model that produces the distribution of 30 long-lived species and tracers and 14 short-lived species. The chemistry describes around 110 gas phase reactions, 37 photodissociation processes and the main heterogeneous reactions related to aerosols and polar stratospheric clouds.

  17. Characteristics of epitaxial garnets grown by CVD using single metal alloy sources. [Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Besser, P. J.; Hamilton, T. N.; Mee, J. E.; Stermer, R. L.

    1974-01-01

    Single metal alloys have been explored as the cation source in the chemical vapor deposition (CVD) of iron garnets. Growth of good quality single crystal garnet films containing as many as five different cations has been achieved over a wide range of deposition conditions. The relationship of film composition to alloy compositions and deposition conditions has been determined for several materials. By proper choice of the alloy composition and the deposition conditions, uncrazed deposits were grown on (111) gadolinium gallium garnet (GGG) substrates. Data on physical, magnetic and optical properties of representative films is presented and discussed.

  18. Characteristics of epitaxial garnets grown by CVD using single metal alloy sources. [Chemical Vapor Deposition

    NASA Technical Reports Server (NTRS)

    Besser, P. J.; Hamilton, T. N.; Mee, J. E.; Stermer, R. L.

    1974-01-01

    Single metal alloys have been explored as the cation source in the chemical vapor deposition (CVD) of iron garnets. Growth of good quality single crystal garnet films containing as many as five different cations has been achieved over a wide range of deposition conditions. The relationship of film composition to alloy compositions and deposition conditions has been determined for several materials. By proper choice of the alloy composition and the deposition conditions, uncrazed deposits were grown on (111) gadolinium gallium garnet (GGG) substrates. Data on physical, magnetic and optical properties of representative films is presented and discussed.

  19. Effects of the growth conditions on the roughness of amorphous hydrogenated carbon films deposited by plasma enhanced chemical vapor deposition

    SciTech Connect

    Capote, G.; Prioli, R.; Freire, F. L. Jr.

    2006-11-15

    The surface roughness and scaling behavior of a-C:H films deposited by plasma enhanced chemical vapor deposition from CH{sub 4}-Ar mixtures were studied using atomic force microscopy. Raman spectroscopy gives some insights about the film microstructure. The film surface roughness is shown to decrease with the increase of deposition negative self-bias, while the presence of Ar ions enhances this effect. An analysis of the film surface and scaling behavior suggests that there is a transition of the mechanism of the film growth from a random deposition with surface diffusion process to a thermal spike based process that occurs upon the increase of the negative self-bias voltage and the argon bombardment.

  20. Influence of the normalized ion flux on the constitution of alumina films deposited by plasma-assisted chemical vapor deposition

    SciTech Connect

    Kurapov, Denis; Reiss, Jennifer; Trinh, David H.; Hultman, Lars; Schneider, Jochen M.

    2007-07-15

    Alumina thin films were deposited onto tempered hot working steel substrates from an AlCl{sub 3}-O{sub 2}-Ar-H{sub 2} gas mixture by plasma-assisted chemical vapor deposition. The normalized ion flux was varied during deposition through changes in precursor content while keeping the cathode voltage and the total pressure constant. As the precursor content in the total gas mixture was increased from 0.8% to 5.8%, the deposition rate increased 12-fold, while the normalized ion flux decreased by approximately 90%. The constitution, morphology, impurity incorporation, and the elastic properties of the alumina thin films were found to depend on the normalized ion flux. These changes in structure, composition, and properties induced by normalized ion flux may be understood by considering mechanisms related to surface and bulk diffusion.

  1. Flux monitoring and control in epitaxy by chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Pearsall, T. P.; Brown, N.; Ricker, N. L.; Johnson, M.

    1998-06-01

    Atomic fluorescence spectroscopy is a promising technique to detect individual chemical species at typical growth pressures in chemical beam and metal-organic epitaxy. We report results of initial experiments to measure triethyl gallium and dimethylethylamine-alane. We have successfully detected both species, but further development is needed to adapt this measurement to the needs of real-time sensing and control in chemical beam epitaxy.

  2. Compositional study of silicon oxynitride thin films deposited using electron cyclotron resonance plasma-enhanced chemical vapor deposition technique

    SciTech Connect

    Baumann, H.; Sah, R.E.

    2005-05-01

    We have used backscattering spectrometry and {sup 15}N({sup 1}H,{alpha},{gamma}){sup 12}C nuclear reaction analysis techniques to study in detail the variation in the composition of silicon oxynitride films with deposition parameters. The films were deposited using 2.45 GHz electron cyclotron resonance plasma-enhanced chemical vapor deposition (PECVD) technique from mixtures of precursors argon, nitrous oxide, and silane at deposition temperature 90 deg. C. The deposition pressure and nitrous oxide-to-silane gas flow rates ratio have been found to have a pronounced influence on the composition of the films. When the deposition pressure was varied for a given nitrous oxide-to-silane gas flow ratio, the amount of silicon and nitrogen increased with the deposition pressure, while the amount of oxygen decreased. For a given deposition pressure, the amount of incorporated nitrogen and hydrogen decreased while that of oxygen increased with increasing nitrous oxide-to-silane gas flow rates ratio. For nitrous oxide-to-silane gas flow ratio of 5, we obtained films which contained neither chemically bonded nor nonbonded nitrogen atoms as revealed by the results of infrared spectroscopy, backscattering spectrometry, and nuclear reaction analysis. Our results demonstrate the nitrogen-free nearly stoichiometric silicon dioxide films can be prepared from a mixture of precursors argon, nitrous oxide, and silane at low substrate temperature using high-density PECVD technique. This avoids the use of a hazardous and an often forbidden pair of silane and oxygen gases in a plasma reactor.

  3. Organometallic Chemical Vapor Deposition Growth of Antimony Compounds

    NASA Astrophysics Data System (ADS)

    Chiang, Peng-Kuen

    This research is motivated by the desire to synthesize Sb III-V materials, including GaAs(,1-x)Sb(,x), InSb, and InAs(,1-x)Sb(,x). Ga-As-Sb system is known to have a significant solid phase miscibility gap from x = 0.2 to x = 0.8 at 600(DEGREES)C using a liquid phase epitaxy (LPE) growth technique. In this work, organometallic chemical vapor deposition (OM-CVD) has been shown to be a suitable growth technique for growing GaAs(,1-x)Sb(,x) alloys lying in the region of solid immiscibility. Conditions for growth of GaAs(,1-x)Sb(,x) layers with x as high as 0.7 on GaAs substrates are described for temperatures between 580 and 650(DEGREES)C. Effects of substrate orientation on growth characteristics are noted, and comparisons of growth on (511) and (100) GaAs faces are made. The experimental results indicate that growth is being controlled by surface reaction kinetics. A simple model based on kinetic control is presented. InSb is one of the most extensively examined semiconductors because of the small energy bandgap which is suitable for 3-5 (mu)m wavelength detection, and it also has highest mobility of any III-V compounds. OM-CVD has been used to epitaxially grow high quality InSb for the first time in this work. InSb with excellent morphology was achieved on both (100) and (111)B InSb substrates. The measured electron mobility at 300(DEGREES)K of undoped InSb grown on (100) GaAs semi-insulating substrates was 40,000 cm('2)/V -sec at a carrier concentration of N(,D)-N(,A) = 1.2 x 10('15)cm(' -3) has been measured at 77(DEGREES)K.Experimental data suggests that a dislocation scattering mechanism represents a significant mobility limiting process. InAs(,1-x)Sb(,x), with x (TURN) 0.6, has the lowest bandgap (=0.1 eV at 300(DEGREES)K) of any of the III-V ternary compounds. This bandgap is suitable for detectors in the 8-12 (mu)m wavelength region where an atmosphere window exists. So far, InAs(,1-x)Sb(,x) with 0.55 < x < 0.75 has not been achieved by LPE and molecular

  4. Process for the preparation of fiber-reinforced ceramic composites by chemical vapor deposition

    DOEpatents

    Lackey, Jr., Walter J.; Caputo, Anthony J.

    1986-01-01

    A chemical vapor deposition (CVD) process for preparing fiber-reinforced ceramic composites. A specially designed apparatus provides a steep thermal gradient across the thickness of a fibrous preform. A flow of gaseous ceramic matrix material is directed into the fibrous preform at the cold surface. The deposition of the matrix occurs progressively from the hot surface of the fibrous preform toward the cold surface. Such deposition prevents the surface of the fibrous preform from becoming plugged. As a result thereof, the flow of reactant matrix gases into the uninfiltrated (undeposited) portion of the fibrous preform occurs throughout the deposition process. The progressive and continuous deposition of ceramic matrix within the fibrous preform provides for a significant reduction in process time over known chemical vapor deposition processes.

  5. Low pressure chemical vapor deposition of niobium coating on silicon carbide

    NASA Astrophysics Data System (ADS)

    Liu, Qiaomu; Zhang, Litong; Cheng, Laifei; Liu, Jinling; Wang, Yiguang

    2009-07-01

    Nb coatings were prepared on a SiC substrate by low pressure chemical vapor deposition using NbCl 5. Thermodynamic calculations were performed to study the effect of temperature and partial pressure of NbCl 5 on the final products. The as-deposited coatings were characterized by scanning electron microscopy, X-ray diffraction, and energy dispersive spectroscopy. The Nb coatings are oriented and grow in the preferred (2 0 0) plane and (2 1 1) plane, at 1173 K and 1223-1423 K, respectively. At 1123-1273 K, the deposition is controlled by the surface kinetic processes. The activation energy is found to be 133 kJ/mol. At 1273-1373 K, the deposition is controlled by the mass transport processes. The activation energy is found to be 46 kJ/mol. The growth mechanism of the chemical vapor deposited Nb is also discussed based on the morphologies and the deposition rates.

  6. Metalorganic chemical vapor deposition of gallium nitride on sacrificial substrates

    NASA Astrophysics Data System (ADS)

    Fenwick, William Edward

    GaN-based light emitting diodes (LEDs) face several challenges if the technology is to continue to make a significant impact in general illumination, and on technology that has become known as solid state lighting (SSL). Two of the most pressing challenges for the continued penetration of SSL into traditional lighting applications are efficacy and total lumens from the device, and their related cost. The development of alternative substrate technologies is a promising avenue toward addressing both of these challenges, as both GaN-based device technology and the associated metalorganic chemical vapor deposition (MOCVD) technology are already relatively mature technologies with a well-understood cost base. Zinc oxide (ZnO) and silicon (Si) are among the most promising alternative substrates for GaN epitaxy. These substrates offer the ability to access both higher efficacy and lumen devices (ZnO) at a much reduced cost. This work focuses on the development of MOCVD growth processes to yield high quality GaN-based materials and devices on both ZnO and Si. ZnO is a promising substrate for growth of low defect-density GaN because of its similar lattice constant and thermal expansion coefficient. The major hurdles for GaN growth on ZnO are the instability of the substrate in a hydrogen atmosphere, which is typical of nitride growth conditions, and the inter-diffusion of zinc and oxygen from the substrate into the GaN-based epitaxial layer. A process was developed for the MOCVD growth of GaN and InxGa 1-xN on ZnO that attempted to address these issues. The structural and optical properties of these films were studied using various techniques. X-ray diffraction (XRD) showed the growth of wurtzite GaN on ZnO, and room-temperature photoluminescence (RT-PL) showed near band-edge luminescence from the GaN and InxGa1-xN layers. However, high zinc and oxygen concentrations due to interdiffusion near the ZnO substrate remained an issue; therefore, the diffusion of zinc and oxygen

  7. Comparison of chemical and heating methods to enhance latent fingerprint deposits on thermal paper.

    PubMed

    Bond, John W

    2014-03-01

    A comparison is made of proprietary methods to develop latent fingerprint deposits on the inked side of thermal paper using either chemical treatment (Thermanin) or the application of heat to the paper (Hot Print System). Results with a trial of five donors show that the application of heat produces statistically significantly more fingerprint ridge detail than the chemical treatment for both fingerprint deposits aged up to 4 weeks and for a nine sequence depletion series. Subjecting the thermal paper to heat treatment with the Hot Print System did not inhibit subsequent ninhydrin chemical development of fingerprint deposits on the noninked side of the paper. A further benefit of the application of heat is the rapid development of fingerprint deposits (less than a minute) compared with up to 12 h for the Thermanin chemical treatment.

  8. A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilaments

    NASA Technical Reports Server (NTRS)

    Gokoglu, S. A.; Kuczmarski, M. A.

    1993-01-01

    Chemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis.

  9. Plasma-enhanced chemical vapor deposition of low-resistive tungsten thin films

    SciTech Connect

    Kim, Y.T.; Min, S.; Hong, J.S. ); Kim, C.K. )

    1991-02-25

    Controlling the wafer temperatures from 200 to 500 {degree}C at H{sub 2}/WF{sub 6} flow ratio equal to 24, low-resistive (about 11 {mu}{Omega} cm) tungsten thin films are deposited by plasma-enhanced chemical vapor deposition. The as-deposited tungsten films have (110), (200), and (211) oriented bcc structures and Auger depth profile shows that fluorine and oxygen impurities are below the detection limit of Auger electron spectroscopy.

  10. Fabrication of lightweight ceramic mirrors by means of a chemical vapor deposition process

    NASA Technical Reports Server (NTRS)

    Goela, Jitendra S. (Inventor); Taylor, Raymond L. (Inventor)

    1991-01-01

    A process to fabricate lightweigth ceramic mirrors, and in particular, silicon/silicon carbide mirrors, involves three chemical vapor deposition steps: one to produce the mirror faceplate, the second to form the lightweight backstructure which is deposited integral to the faceplate, and the third and final step which results in the deposition of a layer of optical grade material, for example, silicon, onto the front surface of the faceplate. The mirror figure and finish are fabricated into this latter material.

  11. Optical emission study of a doped diamond deposition process by plasma enhanced chemical vapor deposition

    SciTech Connect

    Rayar, M.; Supiot, P.; Veis, P.; Gicquel, A.

    2008-08-01

    Standard H{sub 2}/CH{sub 4}/B{sub 2}H{sub 6} plasmas (99% of H{sub 2} and 1% of CH{sub 4}, with 0-100 ppm of B{sub 2}H{sub 6} added) used for doped diamond film growth are studied by optical emission spectroscopy in order to gain a better understanding of the influence of boron species on the gas phase chemistry. Only two boron species are detected under our experimental conditions (9/15/23 W cm{sup -3} average microwave power density values), and the emission spectra used for studies reported here are B({sup 2}S{sub 1/2}-{sup 2}P{sub 1/2,3/2}{sup 0}) and BH[A {sup 1}{pi}-X {sup 1}{sigma}{sup +}(0,0)]. Variations of their respective emission intensities as a function of the ratio B/C, the boron to carbon ratio in the gas mixture, are reported. We confirmed that the plasma parameters (T{sub g}, T{sub e}, and n{sub e}) are not affected by the introduction of diborane, and the number densities of B atoms and BH radical species were estimated from experimental measurements. The results are compared to those obtained from a zero-dimensional chemical kinetic model where two groups of reactions are considered: (1) BH{sub x}+H{r_reversible}BH{sub x-1}+H{sub 2} (x=1-3) by analogy with the well-known equilibrium CH{sub x}+H set of reactions, which occurs, in particular, in diamond deposition reactors; and (2) from conventional organic chemistry, the set of reactions involving boron species: BH{sub x}+C{sub 2}H{sub 2} (x=0-1). The results clearly show that the model based on hydrogen and boron hydrides reactions alone is not consistent with the experimental results, while it is so when taking into account both sets of reactions. Once an upper limit for the boron species number densities has been estimated, axial profiles are calculated on the basis of the plasma model results obtained previously in Laboratoire d'Ingenierie des Materiaux et des Hautes Pressions, and significant differences in trends for different boron species are found. At the plasma-to-substrate boundary

  12. Optical emission study of a doped diamond deposition process by plasma enhanced chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Rayar, M.; Supiot, P.; Veis, P.; Gicquel, A.

    2008-08-01

    Standard H2/CH4/B2H6 plasmas (99% of H2 and 1% of CH4, with 0-100ppm of B2H6 added) used for doped diamond film growth are studied by optical emission spectroscopy in order to gain a better understanding of the influence of boron species on the gas phase chemistry. Only two boron species are detected under our experimental conditions (9/15/23Wcm-3 average microwave power density values), and the emission spectra used for studies reported here are B(S1/22-P1/2,3/202) and BH [AΠ1-XΣ+1(0,0)]. Variations of their respective emission intensities as a function of the ratio B /C, the boron to carbon ratio in the gas mixture, are reported. We confirmed that the plasma parameters (Tg, Te, and ne) are not affected by the introduction of diborane, and the number densities of B atoms and BH radical species were estimated from experimental measurements. The results are compared to those obtained from a zero-dimensional chemical kinetic model where two groups of reactions are considered: (1) BHx+H ↔BHx -1+H2 (x=1-3) by analogy with the well-known equilibrium CHx+H set of reactions, which occurs, in particular, in diamond deposition reactors; and (2) from conventional organic chemistry, the set of reactions involving boron species: BHx+C2H2 (x =0-1). The results clearly show that the model based on hydrogen and boron hydrides reactions alone is not consistent with the experimental results, while it is so when taking into account both sets of reactions. Once an upper limit for the boron species number densities has been estimated, axial profiles are calculated on the basis of the plasma model results obtained previously in Laboratoire d'Ingénierie des Matériaux et des Hautes Pressions, and significant differences in trends for different boron species are found. At the plasma-to-substrate boundary, [BH] and [B] drop off in contrast to [BH2], which shows little decrease, and [BH3], which shows little increase, in this region.

  13. Low temperature junction growth using hot-wire chemical vapor deposition

    DOEpatents

    Wang, Qi; Page, Matthew; Iwaniczko, Eugene; Wang, Tihu; Yan, Yanfa

    2014-02-04

    A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

  14. Dopant gas effect on silicon chemical vapor depositions: A surface potential model

    NASA Technical Reports Server (NTRS)

    Chang, C. A.

    1975-01-01

    A surface potential model is proposed to consistently explain the known dopant gas effects on silicon chemical vapor deposition. This model predicts that the effects of the same dopant gases on the diamond deposition rate using methane and carbon tetrachloride should be opposite and similar to those of silane, respectively. Available data are in agreement with this prediction.

  15. High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells.

    PubMed

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    Thin films of hydrogenated amorphous silicon can be produced at MPa pressures from silane without the use of plasma at temperatures as low as 345 °C. High pressure chemical vapor deposition may open a new way to low cost deposition of amorphous silicon solar cells and other thin film structures over very large areas in very compact, simple reactors.

  16. Chemical vapor deposition of W-Si-N and W-B-N

    DOEpatents

    Fleming, J.G.; Roherty-Osmun, E.L.; Smith, P.M.; Custer, J.S.; Jones, R.V.; Nicolet, M.; Madar, R.; Bernard, C.

    1999-06-29

    A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF[sub 6], either silicon or boron, and nitrogen. The result is a W-Si-N or W-B-N thin film useful for diffusion barrier and micromachining applications. 10 figs.

  17. Chemical vapor deposition of W-Si-N and W-B-N

    DOEpatents

    Fleming, James G.; Roherty-Osmun, Elizabeth Lynn; Smith, Paul M.; Custer, Jonathan S.; Jones, Ronald V.; Nicolet, Marc-A.; Madar, Roland; Bernard, Claude

    1999-01-01

    A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF.sub.6, either silicon or boron, and nitrogen. The result is a W--Si--N or W--B--N thin film useful for diffusion barrier and micromachining applications.

  18. Year 2 Update: Investigation of Chemical Vapor Deposited Aluminum as a Replacement Coating for Cadmium

    DTIC Science & Technology

    2007-01-24

    1/29/2007 1 Year 2 Update: Investigation of Chemical Vapor Deposited Aluminum as a Replacement Coating for Cadmium Dr. Elizabeth Berman and Dr. Eric...Investigation of Chemical Vapor Deposited Aluminum as a Replacement Coating for Cadmium 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6...13. SUPPLEMENTARY NOTES 27th Replacement of Hard Chrome and Cadmium Plating Program Review Meeting, January 23-25, 2007, New Orleans, LA. Sponsored

  19. Chemical Vapor Deposition of Atomically-Thin Molybdenum Disulfide (MoS2)

    DTIC Science & Technology

    2015-03-01

    UNCLASSIFIED AD-E403 625 Technical Report ARMET-TR-14041 CHEMICAL VAPOR DEPOSITION OF ATOMICALLY -THIN MOLYBDENUM...4. TITLE AND SUBTITLE CHEMICAL VAPOR DEPOSITION OF ATOMICALLY -THIN MOLYBDENUM DISULFIDE (MoS2) 5a. CONTRACT NUMBER 5b. GRANT NUMBER...materials, in their bulk form exist as lamellar structures, they can be exfoliated into individual, atomically -thin layers . While the exfoliated 2D materials

  20. Chemical vapor deposition of fluorine-doped zinc oxide

    DOEpatents

    Gordon, Roy G.; Kramer, Keith; Liang, Haifan

    2000-06-06

    Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.

  1. Direct chemical vapor deposition of graphene on dielectric surfaces

    DOEpatents

    Zhang, Yuegang; Ismach, Ariel

    2014-04-29

    A substrate is provided that has a metallic layer on a substrate surface of a substrate. A film made of a two dimensional (2-D) material, such as graphene, is deposited on a metallic surface of the metallic layer. The metallic layer is dewet and/or removed to provide the film on the substrate surface.

  2. Fabrication of large tungsten structures by chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Kahle, V. E.; Lewis, W. J.; Stubbs, V. R.

    1971-01-01

    Process is accomplished by reducing tungsten hexafluoride with hydrogen. Metallic tungsten of essentially 100 percent purity and density is produced and built up as dense deposit on heated mandrel assembly. Process variations are building up, sealing or bonding refractory metals at temperatures below transition temperatures of base metal substrates.

  3. On-line chemical vapour generation of cadmium in the presence of hexacyanochromate(III) for determination by inductively coupled plasma mass spectrometry (ICP-MS).

    PubMed

    Yilmaz, Vedat; Rose, Lakeysha; Arslan, Zikri; Little, Maria D

    2012-11-01

    A vapour generation (VG) procedure has been described for determination of Cd by ICP-MS. Volatile species of Cd were generated on-line by interacting acidic sample solution containing potassium hexacyanochromate(III), K3Cr(CN)6, with sodium borohydride (NaBH4). The hexacyanochromate(III) complex was generated on-line by reacting 0.04 mol L(-1) chromium(III) nitrate and 0.16 mol L(-1) potassium cyanide (KCN) solutions in water. The resulting suspension of chromium(III) hydroxide, Cr(OH)3, was fed continuously to acidic stream of sample solution in the presence of excess KCN. The experimental conditions were optimized for effective generation of volatile species of Cd. Optimum signals were obtained from reaction of sample solutions in 4% v/v HCl with 2% m/v NaBH4 solution. Presence of K3Cr(CN)6 improved the efficiency of Cd vapour generation substantially affording 15-fold higher sensitivity. This phenomenon was thought to occur through formation of reactive intermediates evolved from interaction of [Cr(CN)6](3-) with NaBH4 that react with Cd(II) to increase the yield volatile Cd species. Under the optimum conditions, no significant interferences were observed from the transition metals, including Cu and Ni, up to 1.0 μg mL(-1) levels. Among the hydride forming elements, Bi, Pb, Sb and Sn depressed the signals above 0.1 μg mL(-1). The detection limits (3s) were 6.2 and 5.2 ng L(-1) for (110)Cd and (111)Cd isotopes, respectively. The method was successfully applied to determination of Cd by ICP-MS in several certified reference materials, including Nearshore seawater (CASS-4), Bone ash (SRM 1400), Dogfish liver (DOLT-4) and Mussel tissue (SRM 2976).

  4. On-line chemical vapour generation of cadmium in the presence of hexacyanochromate(III) for determination by inductively coupled plasma mass spectrometry (ICP-MS)

    PubMed Central

    Yilmaz, Vedat; Rose, LaKeysha; Little, Maria D.

    2012-01-01

    A vapour generation (VG) procedure has been described for determination of Cd by ICP-MS. Volatile species of Cd were generated on-line by interacting acidic sample solution containing potassium hexacyanochromate(III), K3Cr(CN)6, with sodium borohydride (NaBH4). The hexacyanochromate(III) complex was generated on-line by reacting 0.04 mol L−1 chromium(III) nitrate and 0.16 mol L−1 potassium cyanide (KCN) solutions in water. The resulting suspension of chromium(III) hydroxide, Cr(OH)3, was fed continuously to acidic stream of sample solution in the presence of excess KCN. The experimental conditions were optimized for effective generation of volatile species of Cd. Optimum signals were obtained from reaction of sample solutions in 4% v/v HCl with 2% m/v NaBH4 solution. Presence of K3Cr(CN)6 improved the efficiency of Cd vapour generation substantially affording 15-fold higher sensitivity. This phenomenon was thought to occur through formation of reactive intermediates evolved from interaction of [Cr(CN)6]3− with NaBH4 that react with Cd(II) to increase the yield volatile Cd species. Under the optimum conditions, no significant interferences were observed from the transition metals, including Cu and Ni, up to 1.0 μg mL−1 levels. Among the hydride forming elements, Bi, Pb, Sb and Sn depressed the signals above 0.1 μg mL−1. The detection limits (3s) were 6.2 and 5.2 ng L−1 for 110Cd and 111Cd isotopes, respectively. The method was successfully applied to determination of Cd by ICP-MS in several certified reference materials, including Nearshore seawater (CASS-4), Bone ash (SRM 1400), Dogfish liver (DOLT-4) and Mussel tissue (SRM 2976). PMID:23997384

  5. Plasma-Enhanced Chemical Vapor Deposition as a Method for the Deposition of Peptide Nanotubes

    DTIC Science & Technology

    2013-09-17

    45432, United States Distribution A: Approved for public release; distribution is unlimited. 2    Introduction: The unique ability of dipeptides ...Using physical vapor deposition (PVD) well-ordered assemblies of peptide nanotubes (PNTs) composed of dipeptide subunits are obtained on various...the PECVD deposition chamber with sublimation capability in the laboratory of Dr. Rajesh Naik (AFRL/RXAS) and conditions were modified for dipeptide

  6. Photocatalytic and optical properties of titanium dioxide thin films prepared by metalorganic chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Khalifa, Z. S.; Mahmoud, S. A.

    2017-07-01

    Titanium dioxide thin films have been deposited by metalorganic chemical vapor deposition (MOCVD) over sodalime glass substrates at substrate temperatures ranging from 250 °C to 450 °C. The effect of deposition temperature on the structure and microstructure of the obtained films has been studied by x-rays diffraction (XRD) and scanning electron microscopy (SEM), respectively. Diffraction patterns show the existence of a pure anatase phase beside a texture change with the increase of deposition temperature. Micrographs show grain fragmentation with the increase in deposition temperature. UV-Vis. spectra have been recorded by spectrophotometery. The optical energy gap has been calculated for the deposited films from the spectrophotometrical data. Photocatalytic experiments have been carried out. The photocatalytic activity has been found to decrease with the increase in deposition temperature.

  7. Properties of TCO anodes deposited by atmospheric pressure chemical vapor deposition and their application to OLED lighting

    NASA Astrophysics Data System (ADS)

    Korotkov, R. Y.

    2012-02-01

    Doped ZnO is one of the materials currently being considered in commercial optoelectronic applications as a potential indium tin oxide (ITO) replacement for the transparent conducting oxide (TCO). The properties of doped ZnO anodes prepared at Arkema Inc. are analyzed using spectroscopic ellipsometer (230 to 1700 nm) and Hall-effect. The modeling of the refractive indexes is conducted using a double oscillator model. The model parameters are tested on a double layer: undoped and doped structure deposited by atmospheric pressure chemical vapor deposition (APCVD) on glass substrates. Excellent correlation between calculated and experimental parameters was obtained.

  8. Reduced chemical warfare agent sorption in polyurethane-painted surfaces via plasma-enhanced chemical vapor deposition of perfluoroalkanes.

    PubMed

    Gordon, Wesley O; Peterson, Gregory W; Durke, Erin M

    2015-04-01

    Perfluoralkalation via plasma chemical vapor deposition has been used to improve hydrophobicity of surfaces. We have investigated this technique to improve the resistance of commercial polyurethane coatings to chemicals, such as chemical warfare agents. The reported results indicate the surface treatment minimizes the spread of agent droplets and the sorption of agent into the coating. The improvement in resistance is likely due to reduction of the coating's surface free energy via fluorine incorporation, but may also have contributing effects from surface morphology changes. The data indicates that plasma-based surface modifications may have utility in improving chemical resistance of commercial coatings.

  9. Metal organic chemical vapor deposition of environmental barrier coatings for the inhibition of solid deposit formation from heated jet fuel

    NASA Astrophysics Data System (ADS)

    Mohan, Arun Ram

    Solid deposit formation from jet fuel compromises the fuel handling system of an aviation turbine engine and increases the maintenance downtime of an aircraft. The deposit formation process depends upon the composition of the fuel, the nature of metal surfaces that come in contact with the heated fuel and the operating conditions of the engine. The objective of the study is to investigate the effect of substrate surfaces on the amount and nature of solid deposits in the intermediate regime where both autoxidation and pyrolysis play an important role in deposit formation. A particular focus has been directed to examining the effectiveness of barrier coatings produced by metal organic chemical vapor deposition (MOCVD) on metal surfaces for inhibiting the solid deposit formation from jet fuel degradation. In the first part of the experimental study, a commercial Jet-A sample was stressed in a flow reactor on seven different metal surfaces: AISI316, AISI 321, AISI 304, AISI 347, Inconel 600, Inconel 718, Inconel 750X and FecrAlloy. Examination of deposits by thermal and microscopic analysis shows that the solid deposit formation is influenced by the interaction of organosulfur compounds and autoxidation products with the metal surfaces. The nature of metal sulfides was predicted by Fe-Ni-S ternary phase diagram. Thermal stressing on uncoated surfaces produced coke deposits with varying degree of structural order. They are hydrogen-rich and structurally disordered deposits, spherulitic deposits, small carbon particles with relatively ordered structures and large platelets of ordered carbon structures formed by metal catalysis. In the second part of the study, environmental barrier coatings were deposited on tube surfaces to inhibit solid deposit formation from the heated fuel. A new CVD system was configured by the proper choice of components for mass flow, pressure and temperature control in the reactor. A bubbler was designed to deliver the precursor into the reactor

  10. Contributions of Organic Vapours to Atmospheric Nanoparticle Growth

    NASA Astrophysics Data System (ADS)

    Wang, L.; Xu, W.; Khalizov, A. F.; Zhang, R.

    2010-12-01

    Atmospheric aerosol particles alter radiative balance of the earth-atmosphere system, impact the regional and global climate, and pose negative effects on human health. Aerosol nucleation events have been frequently observed under various tropospheric conditions and account for a major fraction of the total aerosol population. Although a number of studies suggest that organics are involved in both new particle formation and their subsequent growth, the fundamental chemical processes responsible for organic vapours’ contribution remain poorly understood. This work will focus on laboratory studies on the role of various organic vapours in sulphuric acid nanoparticles growth. Sulfuric acid nanoparticles of 4-20 nm diameter size are generated from homogeneous binary nucleation of H2SO4 and H2O vapors in a laminar flow reactor. The growth factor of H2SO4 nanoparticles exposed to organics including methyglyoxal, ethanol, 1-butanol, 1-heptanol, 1-decanol, and cis-pinonic acid is measured using a nano-tandem differential mobility analyzer (nano-TDMA). Also studied is the potential synergistic effect in the presence of two or more organic vapours to which sulphuric acid nanoparticles are exposed. The chemical compositions of H2SO4 particles exposed to the organics are analyzed by a thermal desorption-ion drift-chemical ionization mass spectrometer (TD-ID-CIMS), and the spectroscopic evolution of functional groups in H2SO4 particles of ~40 nm diameter size, deposited on ZnSe crystal and subsequently exposed to organics, is studied using attenuated total reflection-Fourier transform infrared spectroscopy (ATR-FT-IR). The combined techniques are used to elucidate the key factors in controlling atmospheric nanoparticle growth.

  11. Processing Research on Chemically Vapor Deposited Silicon Nitride

    DTIC Science & Technology

    1981-12-01

    advanced, high -performance tactical missile systems. The EM absorption coefficients of CVJ silicon nitride in the UV-IR / FORM DD I JAN 73 1473...deposition model now in hand, as a result of the Phase 3 program, a high probability exists in future process optimization studies for achieving...form of silicon nitride as a candidate electromagnetic window material for advanced, high -performance tactical missile systems. Over the range of

  12. Synthesis of multifilament silicon carbide fibers by chemical vapor deposition

    NASA Technical Reports Server (NTRS)

    Revankar, Vithal; Hlavacek, Vladimir

    1991-01-01

    A process for development of clean silicon carbide fiber with a small diameter and high reliability is presented. An experimental evaluation of operating conditions for SiC fibers of good mechanical properties and devising an efficient technique which will prevent welding together of individual filaments are discussed. The thermodynamic analysis of a different precursor system was analyzed vigorously. Thermodynamically optimum conditions for stoichiometric SiC deposit were obtained.

  13. CO2-fluxing collapses metal mobility in magmatic vapour

    DOE PAGES

    van Hinsberg, V. J.; Berlo, K.; Migdisov, A. A.; ...

    2016-05-18

    Magmatic systems host many types of ore deposits, including world-class deposits of copper and gold. Magmas are commonly an important source of metals and ore-forming fluids in these systems. In many magmatic-hydrothermal systems, low-density aqueous fluids, or vapours, are significant metal carriers. Such vapours are water-dominated shallowly, but fluxing of CO2-rich vapour exsolved from deeper magma is now recognised as ubiquitous during open-system magma degassing. Furthermore, we show that such CO2-fluxing leads to a sharp drop in element solubility, up to a factor of 10,000 for Cu, and thereby provides a highly efficient, but as yet unrecognised mechanism for metalmore » deposition.« less

  14. Chemical vapor deposition and characterization of titanium dioxide thin films

    NASA Astrophysics Data System (ADS)

    Gilmer, David Christopher

    1998-12-01

    The continued drive to decrease the size and increase the speed of micro-electronic Metal-Oxide-Semiconductor (MOS) devices is hampered by some of the properties of the SiOsb2 gate dielectric. This research has focused on the CVD of TiOsb2 thin films to replace SiOsb2 as the gate dielectric in MOS capacitors and transistors. The relationship of CVD parameters and post-deposition anneal treatments to the physical and electrical properties of thin films of TiOsb2 has been studied. Structural and electrical characterization of TiOsb2 films grown from the CVD precursors tetraisopropoxotitanium (IV) (TTIP) and TTIP plus Hsb2O is described in Chapter 3. Both types of deposition produced stoichiometric TiOsb2 films comprised of polycrystalline anatase, but the interface properties were dramatically degraded when water vapor was added. Films grown with TTIP in the presence of Hsb2O contained greater than 50% more hydrogen than films grown using only TTIP and the hydrogen content of films deposited in both wet and dry TTIP environments decreased sharply with a post deposition Osb2 anneal. A significant thickness variation of the dielectric constant was observed which could be explained by an interfacial oxide and the finite accumulation thickness. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 38, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 4 discusses the low temperature CVD of crystalline TiOsb2 thin films deposited using the precursor tetranitratotitanium (IV), TNT, which produces crystalline TiOsb2 films of the anatase phase in UHV-CVD at temperatures as low as 184sp°C. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 17, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 5 describes the results of a comparison of physical and electrical properties between TiOsb2 films grown via LPCVD using

  15. Optical properties of silicon nitride films formed by plasma-chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Vlasukova, L. A.; Komarov, F. F.; Parkhomenko, I. N.; Milchanin, O. V.; Leont'ev, A. V.; Mudryi, A. V.; Togambaeva, A. K.

    2013-03-01

    The optical properties and structure of layers of silicon nitride deposited on silicon substrates by plasma-aided chemical vapor deposition at 300°C are studied by ellipsometry, Raman scattering, IR spectroscopy, and photoluminescence techniques. It is found that immediately after deposition the silicon nitride contains hydrogen in the form of Si-H bonds. Annealing (1100°C, 30 min) leads to dehydrogenation and densification of the nitride layer. An intense Si3N4 photoluminescence signal is detected in the green. Immediately after deposition the photoluminescence peak appears at 542 nm and annealing shifts it to shorter wavelengths.

  16. Industrial Scale Synthesis of Carbon Nanotubes Via Fluidized Bed Chemical Vapor Deposition: A Senior Design Project

    ERIC Educational Resources Information Center

    Smith, York R.; Fuchs, Alan; Meyyappan, M.

    2010-01-01

    Senior year chemical engineering students designed a process to produce 10 000 tonnes per annum of single wall carbon nanotubes (SWNT) and also conducted bench-top experiments to synthesize SWNTs via fluidized bed chemical vapor deposition techniques. This was an excellent pedagogical experience because it related to the type of real world design…

  17. Industrial Scale Synthesis of Carbon Nanotubes Via Fluidized Bed Chemical Vapor Deposition: A Senior Design Project

    ERIC Educational Resources Information Center

    Smith, York R.; Fuchs, Alan; Meyyappan, M.

    2010-01-01

    Senior year chemical engineering students designed a process to produce 10 000 tonnes per annum of single wall carbon nanotubes (SWNT) and also conducted bench-top experiments to synthesize SWNTs via fluidized bed chemical vapor deposition techniques. This was an excellent pedagogical experience because it related to the type of real world design…

  18. Synthesis and Characterization of In2S3 Thin Films Deposited by Chemical Bath Deposition on Polyethylene Naphthalate Substrates

    NASA Astrophysics Data System (ADS)

    Castelo-González, O. A.; Santacruz-Ortega, H. C.; Quevedo-López, M. A.; Sotelo-Lerma, M.

    2012-04-01

    Indium sulfide (In2S3) thin films were deposited on polyethylene naphthalate (PEN) by chemical bath deposition (CBD). The materials were characterized by ultraviolet (UV)-visible spectroscopy, x-ray photoelectron spectroscopy (XPS), energy-dispersive x-ray spectroscopy (EDX), scanning electron microscopy (SEM), and x-ray diffraction (XRD) to investigate the influence of the polymeric substrate on the resulting thin In2S3. The films showed polycrystalline (cubic and tetragonal) structure. A reduction of the ordering of the polymeric chains at the surface of the PEN was also observed, demonstrated by the appearance of two infrared bands at 1094 cm-1 and 1266 cm-1. Presence of oxygen during the early stages of In2S3 growth was also identified. We propose a reaction mechanism for both the equilibrium and nucleation stages. These results demonstrate that In2S3 can be deposited at room temperature on a flexible substrate.

  19. Evaluation of physical and chemical properties and their interactions in fat, oil, and grease (FOG) deposits.

    PubMed

    Gross, Martin A; Jensen, Jeanette L; Gracz, Hanna S; Dancer, Jens; Keener, Kevin M

    2017-10-15

    Fat, oil and grease (FOG) blockages in sewer systems are a substantial problem in the United States. It has been estimated that over 50% of sewer overflows are a result of FOG blockages. In this work, a thorough laboratory study was undertaken to examine key variables that contribute to FOG deposit formation under controlled conditions. Physical and chemical properties and their interactions were evaluated and conditions that generated deposits that mimicked field FOG deposits were identified. It was found that 96 of the of 128 reaction conditions tested in the laboratory formed FOG deposits with similar physical and chemical characteristics as field FOG deposits. It was also found that FOG deposits can be created through fatty acid crystallization and not just saponification. Furthermore FOG deposits were found to be more complex than previously documented and contain free fatty acids, fatty acid metal salts, triacylglycerol's, diacylglycerol's and, monoacylglycerol's. Lastly it was found that FOG deposits that only contained saturated fatty acids were on average 2.1 times higher yield strength than deposits that contained unsaturated fatty acids. Copyright © 2017 Elsevier Ltd. All rights reserved.

  20. Chemical and physical sputtering effects on the surface morphology of carbon films grown by plasma chemical vapor deposition

    SciTech Connect

    Vazquez, Luis

    2009-08-01

    We have studied the influence of chemical and physical sputtering on the surface morphology of hydrogenated carbon films deposited on silicon substrates by bias-enhanced electron cyclotron resonance chemical vapor deposition. Atomic force microscopy based power spectrum density (PSD) and roughness analysis have been used to investigate the film morphology. This study has been possible due to the appropriate choice of the experimental variables, in particular, gas mixture, resulting in either nitrogen-free (a-C:H) or nitrogenated carbon (a-CN:H) films, and substrate bias (V{sub b}). Under these conditions, chemical sputtering is present for a-CN:H deposition but it is negligible for a-C:H film growth, while physical sputtering processes appear for both systems for V{sub b}<=-85 V. When physical sputtering does not operate, the film growth with simultaneous chemical sputtering leads to a characteristic a-CN:H granular surface morphology. Furthermore, PSD analysis reveals that a spatial correlation of the a-CN:H film surface roughness, up to distances approx300 nm, becomes a fingerprint of the coexistence of growth and chemical erosion processes on the film morphology. However, once physical sputtering takes place, the influence of chemical sputtering by reactive nitrogen species on the final surface morphology becomes negligible and both a-CN:H and a-C:H film morphologies are ultrasmooth.

  1. Si Passivation and Chemical Vapor Deposition of Silicon Nitride: Final Technical Report, March 18, 2007

    SciTech Connect

    Atwater, H. A.

    2007-11-01

    This report investigated chemical and physical methods for Si surface passivation for application in crystalline Si and thin Si film photovoltaic devices. Overall, our efforts during the project were focused in three areas: i) synthesis of silicon nitride thin films with high hydrogen content by hot-wire chemical vapor deposition; ii) investigation of the role of hydrogen passivation of defects in crystalline Si and Si solar cells by out diffusion from hydrogenated silicon nitride films; iii) investigation of the growth kinetics and passivation of hydrogenated polycrystalline. Silicon nitride films were grown by hot-wire chemical vapor deposition and film properties have been characterized as a function of SiH4/NH3 flow ratio. It was demonstrated that hot-wire chemical vapor deposition leads to growth of SiNx films with controllable stoichiometry and hydrogen.

  2. Antimony sulfide thin films prepared by laser assisted chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Shaji, S.; Garcia, L. V.; Loredo, S. L.; Krishnan, B.; Aguilar Martinez, J. A.; Das Roy, T. K.; Avellaneda, D. A.

    2017-01-01

    Antimony sulfide (Sb2S3) thin films were prepared by laser assisted chemical bath deposition (LACBD) technique. These thin films were deposited on glass substrates from a chemical bath containing antimony chloride, acetone and sodium thiosulfate under various conditions of normal chemical bath deposition (CBD) as well as in-situ irradiation of the chemical bath using a continuous laser of 532 nm wavelength. Structure, composition, morphology, optical and electrical properties of the Sb2S3 thin films produced by normal CBD and LACBD were analyzed by X-Ray diffraction (XRD), Raman Spectroscopy, Atomic force microscopy (AFM), X-Ray photoelectron spectroscopy (XPS), UV-vis spectroscopy and Photoconductivity. The results showed that LACBD is an effective synthesis technique to obtain Sb2S3 thin films for optoelectronic applications.

  3. Prediction of Chemical Vapor Deposition Rates on Monofilaments and Its Implications for Fiber Properties

    NASA Technical Reports Server (NTRS)

    Gokoglu, S. A.; Kuczmarski, M.; Veitch, L. C.

    1992-01-01

    Deposition rates are predicted in a cylindrical upflow reactor designed for chemical vapor deposition (CVD) on monofilaments. Deposition of silicon from silane in a hydrogen carrier gas is chosen as a relevant example. The effects of gas and surface chemistry are studied in a two-dimensional axisymmetric flow field for this chemically well-studied system. Model predictions are compared to experimental CVD rate measurements. The differences in some physical and chemical phenomena between such small diameter (about 150 microns) fiber substrates and other typical CVD substrates are highlighted. The influence of the Soret mass transport mechanism is determined to be extraordinarily significant. The difficulties associated with the accurate measurement and control of the fiber temperature are discussed. Model prediction sensitivities are investigated with respect to fiber temperatures, fiber radii, Soret transport, and chemical kinetic parameters. The implications of the predicted instantaneous rates are discussed relative to the desired fiber properties for both the batch and the continuous processes.

  4. AFM investigation and optical band gap study of chemically deposited PbS thin films

    NASA Astrophysics Data System (ADS)

    Zaman, S.; Mansoor, M.; Abubakar; Asim, M. M.

    2016-08-01

    The interest into deposition of nanocrystalline PbS thin films, the potential of designing and tailoring both the topographical features and the band gap energy (Eg) by controlling growth parameters, has significant technological importance. Nanocrystalline thin films of lead sulfide were grown onto glass substrates by chemical bath deposition (CBD) method. The experiments were carried out by varying deposition temperature. We report on the modification of structural and optical properties as a function of deposition temperature. The morphological changes of the films were analyzed by using SEM and AFM. AFM was also used to calculate average roughness of the films. XRD spectra indicated preferred growth of cubic phase of PbS films in (200) direction with increasing deposition time. Optical properties have been studied by UV-Spectrophotometer. From the diffused reflectance spectra we have calculated the optical Eg shift from 0.649-0.636 eV with increasing deposition time.

  5. Low temperature deposition of polycrystalline silicon thin films on a flexible polymer substrate by hot wire chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Lee, Sang-hoon; Jung, Jae-soo; Lee, Sung-soo; Lee, Sung-bo; Hwang, Nong-moon

    2016-11-01

    For the applications such as flexible displays and solar cells, the direct deposition of crystalline silicon films on a flexible polymer substrate has been a great issue. Here, we investigated the direct deposition of polycrystalline silicon films on a polyimide film at the substrate temperature of 200 °C. The low temperature deposition of crystalline silicon on a flexible substrate has been successfully made based on two ideas. One is that the Si-Cl-H system has a retrograde solubility of silicon in the gas phase near the substrate temperature. The other is the new concept of non-classical crystallization, where films grow by the building block of nanoparticles formed in the gas phase during hot-wire chemical vapor deposition (HWCVD). The total amount of precipitation of silicon nanoparticles decreased with increasing HCl concentration. By adding HCl, the amount and the size of silicon nanoparticles were reduced remarkably, which is related with the low temperature deposition of silicon films of highly crystalline fraction with a very thin amorphous incubation layer. The dark conductivity of the intrinsic film prepared at the flow rate ratio of RHCl=[HCl]/[SiH4]=3.61 was 1.84×10-6 Scm-1 at room temperature. The Hall mobility of the n-type silicon film prepared at RHCl=3.61 was 5.72 cm2 V-1s-1. These electrical properties of silicon films are high enough and could be used in flexible electric devices.

  6. Friction and Wear of Ion-Beam-Deposited Diamondlike Carbon on Chemical-Vapor-Deposited, Fine-Grain Diamond

    NASA Technical Reports Server (NTRS)

    Miyoshi, Kazuhisa; Wu, Richard L. C.; Lanter, William C.

    1996-01-01

    Friction and wear behavior of ion-beam-deposited diamondlike carbon (DLC) films coated on chemical-vapor-deposited (CVD), fine-grain diamond coatings were examined in ultrahigh vacuum, dry nitrogen, and humid air environments. The DLC films were produced by the direct impact of an ion beam (composed of a 3:17 mixture of Ar and CH4) at ion energies of 1500 and 700 eV and an RF power of 99 W. Sliding friction experiments were conducted with hemispherical CVD diamond pins sliding on four different carbon-base coating systems: DLC films on CVD diamond; DLC films on silicon; as-deposited, fine-grain CVD diamond; and carbon-ion-implanted, fine-grain CVD diamond on silicon. Results indicate that in ultrahigh vacuum the ion-beam-deposited DLC films on fine-grain CVD diamond (similar to the ion-implanted CVD diamond) greatly decrease both the friction and wear of fine-grain CVD diamond films and provide solid lubrication. In dry nitrogen and in humid air, ion-beam-deposited DLC films on fine-grain CVD diamond films also had a low steady-state coefficient of friction and a low wear rate. These tribological performance benefits, coupled with a wider range of coating thicknesses, led to longer endurance life and improved wear resistance for the DLC deposited on fine-grain CVD diamond in comparison to the ion-implanted diamond films. Thus, DLC deposited on fine-grain CVD diamond films can be an effective wear-resistant, lubricating coating regardless of environment.

  7. The Relationship Between Chemical Structure and Dielectric Properties of Plasma-Enhanced Chemical Vapor Deposited Polymer Thin Films (Postprint)

    DTIC Science & Technology

    2007-01-01

    Materials Sci & Tech Applications, LLC) N. Venkatasubramanian and John T. Grant (University of Dayton) Kurt Eyink, Jesse Enlow, and Timothy J. Bunning...structure and dielectric properties of plasma-enhanced chemical vapor deposited polymer thin films Hao Jiang b,⁎, Lianggou Hong b, N. Venkatasubramanian c

  8. Ultrafine Microstructure Composites Prepared by Chemical Vapor Deposition

    DTIC Science & Technology

    1987-12-01

    have performed numerous thermodynamic calculations for the BN + AIN and HfB2 + SiC systems. The calculations were performed usi..g the SOLGASMIX - PV ...CH3 SiCl 3 (methyltrichlorosilane or MTS1 again using the SOLGASMIX - PV program. A quantity of hydrogen was added equal to ten times the sum of the...Electro- chemical Society, Inc., Pennington, NJ, 1979, p.1. 7. T. M. Besmann, " SOLGASMIX - PV , A Computer Program to Calcu- late Equilibrium

  9. Preparation and analysis of chemically gradient functional bioceramic coating formed by pulsed laser deposition.

    PubMed

    Rajesh, P; Muraleedharan, C V; Sureshbabu, S; Komath, Manoj; Varma, Harikrishna

    2012-02-01

    Bioactive ceramic coatings based on calcium phosphates yield better functionality in the human body for a variety of metallic implant devices including orthopaedic and dental prostheses. In the present study chemically and hence functionally gradient bioceramic coating was obtained by pulsed laser deposition method. Calcium phosphate bioactive ceramic coatings based on hydroxyapatite (HA) and tricalcium phosphate (TCP) were deposited over titanium substrate to produce gradation in physico-chemical characteristics and in vitro dissolution behaviour. Sintered targets of HA and α-TCP were deposited in a multi target laser deposition system. The obtained deposits were characterized by X-ray diffraction, fourier transform infrared spectroscopy, scanning electron microscopy and energy dispersive X-ray analysis. Inductively coupled plasma spectroscopy was used to estimate the in vitro dissolution behaviour of coatings. The variation in mechanical property of the gradient layer was evaluated through scratch test and micro-indentation hardness. The bioactivity was examined in vitro with respect to the ability of HA layer to form on the surface as a result of contact with simulated body fluid. It could be inferred that chemically gradient functional bioceramic coating can be produced by laser deposition of multiple sintered targets with variable chemical composition.

  10. Chemical Weathering of New Pyroclastic Deposits from Mt. Merapi (Java), Indonesia

    SciTech Connect

    Fiantis, Dian; Nelson, Malik; Van Ranst, Eric; Shamshudin, Josup; Qafoku, Nikolla

    2009-09-01

    Java Island, Indonesia with abundant amount of pyroclastic deposits is located in the very active and dynamic Pacific Ring of Fires. Studying the geochemical weathering indices of these pyroclastic deposits is important to get a clear picture about weathering profiles on deposits resulting from the eruption of Mt. Merapi. Immediately after the first phase of the eruption (March to June 2006), moist and leached pyroclastic deposits were collected. These pyroclastic deposits were found to be composed of volcanic glass, plagioclase feldspar in various proportions, orthopyroxene, clinopyroxene, olivine, amphibole, and titanomagnetite. Total elemental composition of the bulk samples (including trace elements and heavy metals) were determined by wet chemical methods and X-ray fluorescence (XRF) analyses. Weathering of the pyroclastic deposits was studied using various weathering indices. The Ruxton ratio, weathering index of Parker, Vought resudual index and chemical index of weathering of moist pyroclastic are lower than the leached sample but the alteration indices (chemical and plagioclase) are slightly higher in the moist compared to the leached pyroclastic deposits.

  11. X-ray photoelectron spectroscopic study of the chemical vapor deposited W/Al interface

    NASA Astrophysics Data System (ADS)

    Ohshima, H.; Katayama, M.; Onoda, K.; Hattori, T.; Suzuki, H.; Tokuda, Y.

    1993-07-01

    The dependence of the amount of aluminum trifluoride (AlF3) piled up at the interface of chemical vapor deposited tungsten and the aluminum under layer on the deposition time and subsequent annealing in ultrahigh vacuum (UHV) or in monosilane (SiH4) gas has been studied. AlF3 is formed by the reaction of the aluminum under layer with tungsten hexafluoride (WF6) during the initial state of tungsten chemical vapor deposition. Tungsten was deposited on an Al layer under selective deposition conditions by SiH4 reduction at 250 °C. X-ray photoelectron spectroscopy measurement reveals that the amount of AlF3 decreases with an increase in the tungsten deposition time and that the reduction of AlF3 by volatilization of aluminum fluorides, which occurs at higher temperatures (≳400 °C) is not observed at low temperature (270 °C). Annealing in SiH4 gas after the tungsten deposition was effective to reduce the amount of AlF3 compared with annealing in UHV. This result and thermochemical data would suggest that the dependence of the amount of AlF3 on the tungsten deposition time is explained by the reduction of AlF3 with hydrogen atoms supplied from the dissociation of SiH4.

  12. Ultrafine Microstructure Composites Prepared by Chemical Vapor Deposition

    DTIC Science & Technology

    1989-12-01

    phase ceramic composites by CVD is that mechanical as well as chemical, electrical , optical, and thermal properties of the composites 2 can be favorably...while it is also an electrical insulator. Also, in Table 2-1, other important properties of BN are compared with those of AIN and other materials... Electrical Resistivity >10" >1016 >10" >10" >101 - (ncm) Density theo: 2.27 3.26 3.97 2.21 obs: 1.9 1.4 3.1 3.15 92% (g/cm’) to to to to 2.0 2.2 3.2

  13. Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Hazbun, Ramsey; Hart, John; Hickey, Ryan; Ghosh, Ayana; Fernando, Nalin; Zollner, Stefan; Adam, Thomas N.; Kolodzey, James

    2016-06-01

    The deposition of silicon using tetrasilane as a vapor precursor is described for an ultra-high vacuum chemical vapor deposition tool. The growth rates and morphology of the Si epitaxial layers over a range of temperatures and pressures are presented. The layers were characterized using transmission electron microscopy, x-ray diffraction, spectroscopic ellipsometry, Atomic Force Microscopy, and secondary ion mass spectrometry. Based on this characterization, high quality single crystal silicon epitaxy was observed. Tetrasilane was found to produce higher growth rates relative to lower order silanes, with the ability to deposit crystalline Si at low temperatures (T=400 °C), with significant amorphous growth and reactivity measured as low as 325 °C, indicating the suitability of tetrasilane for low temperature chemical vapor deposition such as for SiGeSn alloys.

  14. Electro-optic polymer waveguide fabricated using electric-field-assisted chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Tatsuura, Satoshi; Sotoyama, Wataru; Yoshimura, Tetsuzo

    1992-04-01

    The paper describes the fabrication of an electrooptic (EO) polymer channel waveguide using a new technique, electric-field-assisted chemical vapor deposition. A polymer film is deposited from epoxy and nonlinear optical (NLO) aliphatic amine, using chemical vapor deposition under an electric field applied by slit electrodes on a thermally oxidized Si wafer at room temperature. A clear propagating He-Ne laser beam is observed along the electrode gap. The propagated beam's near field pattern is bright for the TE mode, but very weak for the TM mode. This indicates the NLO side groups' in-plane alignment and the fabrication of a channel waveguide. The EO coefficient of this waveguide, measured in a Mach-Zehnder interferometer, is r(11) of about 0.1 pm/V. The polymer channel waveguide, which is poled at room temperature after film deposition, shows no EO response. This means NLO molecules are actually aligned during polymerizing, not after.

  15. Effects of Buffer Salt Concentration on the Dominated Deposition Mechanism and Optical Characteristics of Chemically Deposited Cadmium Sulfide Thin Films

    NASA Astrophysics Data System (ADS)

    Kakhaki, Z. Makhdoumi; Youzbashi, A.; Sangpour, P.; Kazemzadeh, A.; Naderi, N.; Bazargan, A. M.

    2016-02-01

    Effects of buffer salt concentration on the rate of deposition, dominated deposition mechanism and subsequently the structural, morphological, and optical properties of cadmium sulfide (CdS) thin films deposited by chemical bath deposition (CBD) on glass substrate were investigated. The precursors were chosen to be cadmium chloride (CdCl2) as the cadmium source, thiourea (CS(NH2)2) as the sulfur source, ammonium nitrate (NH4NO3) as the buffer salt and ammonia as the complexing agent and the pH controller. The influence of the NH4NO3 concentration on the structure, morphology, film uniformity, stoichiometry and optical properties of CdS thin films was also studied by X-ray diffractometer (XRD), field emission scanning electron microscope (FE-SEM), energy dispersive X-ray (EDX) spectroscope, uv-visible and photoluminescence (PL) spectroscopes. The XRD studies revealed that all the deposited films exhibited a (002)h/(111)c preferred orientation. The crystallite size was increased from 20nm to 30nm by the increase of concentration of NH4NO3 from 0.5M to 2.5M. The morphology of CdS thin films were agglomerated spherical particles consisted of smaller particles. The surface of thin films deposited at the NH4NO3 concentration of 0.5M was compact and smooth. The increase of the concentration of NH4NO3 decreased the packing density of the films. The optical band gap was in the range of 2.25-2.4eV, which was decreased by the decrement of packing density. The PL spectra showed two peaks centered at 400nm and 500nm which are attributed to violet and band-to-band emissions, respectively.

  16. Aerosol chemical vapor deposition of metal oxide films

    DOEpatents

    Ott, K.C.; Kodas, T.T.

    1994-01-11

    A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said substrate.

  17. Etching Effects During the Chemical Vapor Deposition of (100) Diamond

    SciTech Connect

    Battaile, C.C.; Srolovitz, D.J.; Oleinik, I.I.; Pettifor, D.G.; Sutton, A.P.; Harris, S.J.; Butler, J.E.

    1999-08-02

    Current theories of CVD growth on (100) diamond are unable to account for the numerous experimental observations of slow-growing, locally smooth (100)(2x1) films. In this paper they use quantum mechanical calculations of diamond surface thermochemistry and atomic-scale kinetic Monte Carlo simulations of deposition to investigate the efficacy of preferential etching as a mechanism that can help to reconcile this discrepancy. This etching mechanism allows for the removal of undercoordinated carbon atoms from the diamond surface. In the absence of etching, simulated growth on the (100)(2x1) surface is faster than growth on the (110) and (111) surfaces, and the (100) surface is atomically rough. When etching is included in the simulations, the (100) growth rates decrease to values near those observed experimentally, while the rates of growth on the other surfaces remain largely unaffected and similar to those observed experimentally. In addition, the etching mechanism promotes the growth of smooth (100) surface regions in agreement with numerous scanning probe studies.

  18. Plasma enhanced metalorganic chemical vapor deposition of amorphous aluminum nitride

    NASA Astrophysics Data System (ADS)

    Harris, H.; Biswas, N.; Temkin, H.; Gangopadhyay, S.; Strathman, M.

    2001-12-01

    Plasma enhanced deposition of amorphous aluminum nitride (AlN) using trimethylaluminum, hydrogen, and nitrogen was performed in a capacitively coupled plasma system. Temperature was varied from 350 to 550 °C, and pressure dependence of the film structure was investigated. Films were characterized by Fourier transform infrared, Rutherford backscattering (RBS), ellipsometry, and x-ray diffraction (XRD). The films are amorphous in nature, as indicated by XRD. Variations in the refractive index were observed in ellipsometric measurements, which is explained by the incorporation of carbon in the films, and confirmed by RBS. Capacitance-voltage, conductance-voltage (G-V), and current-voltage measurements were performed to reveal bulk and interface electrical properties. The electrical properties showed marked dependence on processing conditions of the AlN films. Clear peaks as observed in the G-V characteristics indicated that the losses are predominantly due to interface states. The interface state density ranged between 1010 and 1011eV-1 cm-2. Annealing in hydrogen resulted in lowering of interface state density values.

  19. Very narrow SiGe/Si quantum wells deposited by low-temperature atmospheric pressure chemical vapor deposition

    SciTech Connect

    Gruetzmacher, D.A.; Sedgwick, T.O.; Northrop, G.A.

    1993-05-01

    The optical, structural, and electrical properties of very narrow SiGe quantum wells grown by {open_quotes}ultra-clean{close_quotes} atmospheric pressure chemical vapor deposition (APCVD) are investigated. X-ray reflectivity data reveal abrupt interfaces with a root-mean-square roughness of not more than 0.2 nm. For the first time narrow (4.3 meV) excitonic photoluminescence (PL) spectra were obtained from APCVD grown samples containing SiGe wells with 12.5% to 32.5% Ge. For the narrowest wells PL doublets are observed which are attributed to atomic steps at the SiGe/Si interfaces. The Pl and x-ray diffractometry data show that process deposition control for well and barrier width is within the monolayer range. Resonant tunneling diodes fabricated with 2.5-mm-wide Si{sub 0.75}Ge{sub 0.25} wells show world record peak to valley ratios of 4.2. Magneto-transport measurements performed at high magnetic fields of two-dimensional hole gases exhibit pronounced Hall plateaus and well-defined Shubnikov de Hass oscillations, indicating high material quality. The results give evidence that atmospheric pressure chemical vapor deposition, which relies on gas switching sequences of the reactive gases in a hydrogen ambience, is able to produce interface abruptness comparable if not better than reported by any other technique. 22 refs., 7 figs.

  20. Groundwater chemical and microbiological composition in Aptian-Cenomanian deposits (Kaimisovsky oil-gas bearing province)

    NASA Astrophysics Data System (ADS)

    Nalivaiko, N. G.; Dutova, E. M.; Spiridonov, T. S.; Pokrovsky, D. S.; Pokrovskiy, V. D.

    2016-09-01

    This paper reveals the investigation results of the groundwater chemical and microbiological composition in Aptian-Cenomanian deposits, Kaimisovsky oil-gas bearing province. The mineral-forming behavior of the groundwater was evaluated. It was determined that the diversity of microbial communities could be corrosive- harmful for the groundwater used in reservoir pressure maintenance systems. According to the research results it is necessary to study the groundwater microorganisms in Aptian-Cenomanian deposits and their influence on groundwater itself.

  1. Composition and submicron structure of chemically deposited Cu2Se-In2Se3 films

    NASA Astrophysics Data System (ADS)

    Markov, V. F.; Tulenin, S. S.; Maskaeva, L. N.; Kuznetsov, M. V.; Barbin, N. M.

    2012-03-01

    Films of substitutional solid solutions of the Cu2Se-In2Se3 system containing up to 7.5 at. % In have been obtained by chemical deposition from aqueous media. The composition, structure, and morphology of the films have been studied. Data of X-ray diffraction and X-ray photoelectron spectroscopy showed that copper in the solid solution occurs in a single-valence state (Cu+). The deposited layers possess a globular morphology and are nanostructured.

  2. Mathematical Modeling of Chemical Vapor Deposition of Material on a Curvilinear Surface

    NASA Astrophysics Data System (ADS)

    Kuvyrkin, G. N.; Zhuravskii, A. V.; Savel‧eva, I. Yu.

    2016-11-01

    In this work, a mathematical model has been constructed that describes the process of chemical vapor deposition of material on a curvilinear plate. On the boundary where the deposition occurs, account is taken of convective heat transfer, heat transfer by radiation, and heat and mass transfer during the attachment of the substance to the surface. A numerical algorithm is proposed for finding the temperature profile at any instant of time; results and an analysis of numerical calculation are given for different materials.

  3. The development of chemically vapor deposited mullite coatings for the corrosion protection of SiC

    SciTech Connect

    Auger, M.; Hou, P.; Sengupta, A.; Basu, S.; Sarin, V.

    1998-05-01

    Crystalline mullite coatings have been chemically vapor deposited onto SiC substrates to enhance the corrosion and oxidation resistance of the substrate. Current research has been divided into three distinct areas: (1) Development of the deposition processing conditions for increased control over coating`s growth rate, microstructure, and morphology; (2) Analysis of the coating`s crystal structure and stability; (3) The corrosion resistance of the CVD mullite coating on SiC.

  4. Process and film characterization of chemical-bath-deposited ZnS thin films

    SciTech Connect

    Dona, J.M.; Herrero, J.

    1994-01-01

    Chemical-bath deposition of ZnS thin films from NH{sub 3}/NH{sub 2}-NH{sub 2}/SC(NH{sub 2}){sub 2}/ZnSO{sub 4} solutions has been studied. The effect of various process parameters on the growth and the film quality is presented. A first approach to a mechanistic interpretation of the chemical process is reported. The structural, optical, chemical, and electrical properties of the ZNS thin films deposited by this method have been studied. The electron diffraction (EDS) analysis shows that the films are microcrystalline with a cubic structure. EDS analysis has demonstrated that the films are highly stoichiometric. Scanning electron microscopy studies of the ZnS thin films deposited by this method show that the films are continuous and homogeneous. Electrical conductivity measurements have shown the highly resistivity nature of these films ({sigma} = 10{sup {minus}9} S/cm).

  5. Field emission property of hydrogenated chemical vapor deposited diamond films studied by scanning tunneling microscopy.

    PubMed

    Liu, Fengbin; Wang, Jiadao; Chen, Darong

    2010-11-01

    By using scanning tunneling microscopy, the plots of tunneling current versus applied voltage, at the local points for hydrogenated and oxygenated chemical vapor deposited diamond films, were investigated. For comparison, the measurement points were adopted on the centers of the crystalline grains and at the grain boundaries, respectively. The results indicated that, for the hydrogenated chemical vapor deposited diamond, the field emission character is much better on the center of the crystalline grains than at the grain boundary. In contrast, for the oxygenated samples, the crystalline grains show a poor field emission character. The two diamond surfaces exhibit similar field emission characters at the grain boundaries. The surface emission mechanisms of the hydrogenated chemical vapor deposited diamond films were also discussed.

  6. Improvement of the Crystallinity of Silicon Films Deposited by Hot-Wire Chemical Vapor Deposition with Negative Substrate Bias

    NASA Astrophysics Data System (ADS)

    Zhang, Lei; Shen, Honglie; You, Jiayi

    2013-08-01

    We have investigated the effect of negative substrate bias on microcrystalline silicon films deposited on glass and stainless steel by hot-wire chemical vapor deposition (HWCVD) to gain insight into the effect of negative substrate bias on crystallization. Structural characterization of the silicon films was performed by Raman spectroscopy, x-ray diffraction, and scanning electron microscopy. It was found that the crystallinity of the films is obviously improved by applying the substrate bias, especially for films on stainless steel. At hot-wire temperature of 1800°C and negative substrate bias of -800 V, grain size as large as 200 nm was obtained on stainless-steel substrate with crystalline fraction 9% higher than that of films deposited on glass and 15% higher than that of films deposited without substrate bias. It is deduced that the improvement of the crystallinity is mainly related to the accelerated electrons emitted from the hot wires. The differences in this improvement between different substrates are caused by the different electrical potential of the substrates. A solar cell fabricated by HWCVD with -800 V substrate bias is demonstrated, showing an obviously higher conversion efficiency than that without substrate bias.

  7. CuInS2 Films Deposited by Aerosol-Assisted Chemical Vapor Deposition Using Ternary Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Jin, Michael; Banger, Kal; Harris, Jerry; Hepp, Aloysius

    2003-01-01

    Polycrystalline CuInS2 films were deposited by aerosol-assisted chemical vapor deposition using both solid and liquid ternary single-source precursors (SSPs) which were prepared in-house. Films with either (112) or (204/220) preferred orientation, had a chalcopyrite structure, and (112)-oriented films contained more copper than (204/220)-oriented films. The preferred orientation of the film is likely related to the decomposition and reaction kinetics associated with the molecular structure of the precursors at the substrate. Interestingly, the (204/220)-oriented films were always In-rich and were accompanied by a secondary phase. From the results of post-growth annealing, etching experiments, and Raman spectroscopic data, the secondary phase was identified as an In-rich compound. On the contrary, (112)-oriented films were always obtained with a minimal amount of the secondary phase, and had a maximum grain size of about 0.5 micron. Electrical and optical properties of all the films grown were characterized. They all showed p-type conduction with an electrical resistivity between 0.1 and 30 Omega-cm, and an optical band gap of approximately 1.46 eV +/- 0.02, as deposited. The material properties of deposited films revealed this methodology of using SSPs for fabricating chalcopyrite-based solar cells to be highly promising.

  8. Electrical and mechanical characterization of chemical vapor deposition of tungsten on sputter-deposited TiN layers

    NASA Astrophysics Data System (ADS)

    Zhang, S.-L.; Palmans, R.; Petersson, C. S.; Maex, K.

    1995-12-01

    Tungsten (W) films are deposited from tungsten hexafluoride on sputter-deposited TiN adhesion layers in a cold-wall chemical vapor deposition reactor. The film resistivity of the W films is found to be thickness dependent. It decreases monotonically with increasing film thickness. Typical resistivity values of 40-nm-thick W films are about 19.3-23.4 μΩ cm, depending on the structure of the underlying TiN layer used. The resistivity of a 980-nm-thick W film is 9.8 μΩ cm. Oxygen and fluorine impurities, as well as structural difference in the W films are found to be the major causes for the resistivity variations. Lowering impurity level and/or increasing W crystallite size can decrease film resistivity. The stress of all the W films is found to be tensile, independent of the structure of the TiN layers. However, the absolute value of the stress is intimately associated with the structure of the TiN layers. The stress values can differ by a factor of more than 2 for the 40-nm-thick W films deposited on the different underlying TiN layers. The amplitude of stress also monotonically decreases with increasing film thickness. Consequently, the difference in stress induced by the difference in the underlying TiN layers gradually disappears as the film thickness increases. A strong correlation between the stress and the film texture is found.

  9. Physical properties of chemically deposited Bi2S3 thin films using two post-deposition treatments

    NASA Astrophysics Data System (ADS)

    Moreno-García, H.; Messina, S.; Calixto-Rodriguez, M.; Martínez, H.

    2014-08-01

    As-deposited bismuth sulfide (Bi2S3) thin films prepared by chemical bath deposition technique were treated with thermal annealed in air atmosphere and argon AC plasma. The as-deposited, thermally annealing and plasma treatment Bi2S3 thin films have been characterized by X-ray diffraction (XRD) analysis, atomic force microscopy analysis (AFM), transmission, specular reflectance and electrical measurements. The structural, morphological, optical and electrical properties of the films are compared. The XRD analysis showed that both post-deposition treatments, transform the thin films from amorphous to a crystalline phase. The atomic force microscopy (AFM) measurement showed a reduction of roughness for the films treated in plasma. The energy band gap value of the as-prepared film was Eg = 1.61 eV, while for the film thermally annealed was Eg = 1.60 eV and Eg = 1.56 eV for film treated with Plasma. The electrical conductivity under illumination of the as-prepared films was 3.6 × 10-5 (Ω cm)-1, whereas the conductivity value for the thermally annealed films was 2.0 × 10-3 (Ω cm)-1 and for the plasma treated films the electrical conductivity increases up to 7.7 × 10-2 (Ω cm)-1.

  10. Deposition of titanium coating on SiC fiber by chemical vapor deposition with Ti-I2 system

    NASA Astrophysics Data System (ADS)

    Luo, Xian; Wu, Shuai; Yang, Yan-qing; Jin, Na; Liu, Shuai; Huang, Bin

    2017-06-01

    Titanium coating was prepared on SiC fiber using titanium-iodine (Ti-I2) mixture by hot-wall chemical vapor deposition. Thermodynamic analysis and experimental observation were carried out in this work. The thermodynamic analysis of the reactions in the Ti-I2 system indicates that Ti and I2 raw powder materials transform to titanium coating as follows: Ti + I2 → (TiI2, TiI3), and (TiI2, TiI3) → Ti. In theory, the conversions of TiI3 and TiI2 reach the maximum when Ti:I2 is 1:1.5, while in actual experiment that reached the maximum when Ti:I2 was 1:2, as there existed the waste of I2 due to sublimation. Typical deposited coating is relatively flat and uniform. However, as SiC is prone to react with Ti at high temperatures, the obtained coating contained some Si and C elements except for Ti. So the coating was not a pure Ti coating but contained some carbides and silicides. Deposition rate of the coating increased with the increase of temperature. The deposited thickness increased with the increase of heat preservation time, and achieved the maximum thickness at 90 min.

  11. CuInS2 Films Deposited by Aerosol-Assisted Chemical Vapor Deposition Using Ternary Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Jin, Michael H.-C.; Banger, Kulbinder K.; Harris, Jerry D.; Hepp, Aloysius F.

    2004-01-01

    Polycrystalline CuInS2 films were deposited by aerosol-assisted chemical vapor deposition using both solid and liquid ternary single-source precursors (SSPs) prepared in-house. Films with either (112) or (204/220) preferred orientation were obtained, and compositional analysis showed that (112)-oriented films contained more copper than (204/220)-oriented films. Using X-ray diffraction, the signature of chalcopyrite structure was often confirmed for (112)-oriented films. The preferred orientation of the film is likely related to the decomposition and reaction kinetics associated with the molecular structure of the precursors at the substrate. Interestingly, the (204/220)-oriented films were always accompanied by a secondary phase, which was identified as an unknown In-rich compound from the results of post-growth annealing, etching experiments, and Raman spectroscopic data. By increasing Cu to In ratio in the film, (112)-oriented films were obtained with a maximum grain size of about 0.5 micrometers, and their X-ray diffractions did not show any observable signature of the In secondary phase. Electrical and optical properties of all the films grown were characterized. They all showed p-type conduction with an electrical resistivity between 0.1 omega cm and 30 omega cm, and an optical band gap of 1.46eV +/- 0.02, as deposited. The material properties of deposited films revealed this methodology of using SSPs for fabricating chalcopyrite-based solar cells to be highly promising.

  12. CuInS2 Films Deposited by Aerosol-Assisted Chemical Vapor Deposition Using Ternary Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Jin, Michael H.-C.; Banger, Kulbinder K.; Harris, Jerry D.; Hepp, Aloysius F.

    2004-01-01

    Polycrystalline CuInS2 films were deposited by aerosol-assisted chemical vapor deposition using both solid and liquid ternary single-source precursors (SSPs) prepared in-house. Films with either (112) or (204/220) preferred orientation were obtained, and compositional analysis showed that (112)-oriented films contained more copper than (204/220)-oriented films. Using X-ray diffraction, the signature of chalcopyrite structure was often confirmed for (112)-oriented films. The preferred orientation of the film is likely related to the decomposition and reaction kinetics associated with the molecular structure of the precursors at the substrate. Interestingly, the (204/220)-oriented films were always accompanied by a secondary phase, which was identified as an unknown In-rich compound from the results of post-growth annealing, etching experiments, and Raman spectroscopic data. By increasing Cu to In ratio in the film, (112)-oriented films were obtained with a maximum grain size of about 0.5 micrometers, and their X-ray diffractions did not show any observable signature of the In secondary phase. Electrical and optical properties of all the films grown were characterized. They all showed p-type conduction with an electrical resistivity between 0.1 omega cm and 30 omega cm, and an optical band gap of 1.46eV +/- 0.02, as deposited. The material properties of deposited films revealed this methodology of using SSPs for fabricating chalcopyrite-based solar cells to be highly promising.

  13. Development of a Computational Chemical Vapor Deposition Model: Applications to Indium Nitride and Dicyanovinylaniline

    NASA Technical Reports Server (NTRS)

    Cardelino, Carlos

    1999-01-01

    A computational chemical vapor deposition (CVD) model is presented, that couples chemical reaction mechanisms with fluid dynamic simulations for vapor deposition experiments. The chemical properties of the systems under investigation are evaluated using quantum, molecular and statistical mechanics models. The fluid dynamic computations are performed using the CFD-ACE program, which can simulate multispecies transport, heat and mass transfer, gas phase chemistry, chemistry of adsorbed species, pulsed reactant flow and variable gravity conditions. Two experimental setups are being studied, in order to fabricate films of: (a) indium nitride (InN) from the gas or surface phase reaction of trimethylindium and ammonia; and (b) 4-(1,1)dicyanovinyl-dimethylaminoaniline (DCVA) by vapor deposition. Modeling of these setups requires knowledge of three groups of properties: thermodynamic properties (heat capacity), transport properties (diffusion, viscosity, and thermal conductivity), and kinetic properties (rate constants for all possible elementary chemical reactions). These properties are evaluated using computational methods whenever experimental data is not available for the species or for the elementary reactions. The chemical vapor deposition model is applied to InN and DCVA. Several possible InN mechanisms are proposed and analyzed. The CVD model simulations of InN show that the deposition rate of InN is more efficient when pulsing chemistry is used under conditions of high pressure and microgravity. An analysis of the chemical properties of DCVA show that DCVA dimers may form under certain conditions of physical vapor transport. CVD simulations of the DCVA system suggest that deposition of the DCVA dimer may play a small role in the film and crystal growth processes.

  14. Development of a Computational Chemical Vapor Deposition Model: Applications to Indium Nitride and Dicyanovinylaniline

    NASA Technical Reports Server (NTRS)

    Cardelino, Carlos

    1999-01-01

    A computational chemical vapor deposition (CVD) model is presented, that couples chemical reaction mechanisms with fluid dynamic simulations for vapor deposition experiments. The chemical properties of the systems under investigation are evaluated using quantum, molecular and statistical mechanics models. The fluid dynamic computations are performed using the CFD-ACE program, which can simulate multispecies transport, heat and mass transfer, gas phase chemistry, chemistry of adsorbed species, pulsed reactant flow and variable gravity conditions. Two experimental setups are being studied, in order to fabricate films of: (a) indium nitride (InN) from the gas or surface phase reaction of trimethylindium and ammonia; and (b) 4-(1,1)dicyanovinyl-dimethylaminoaniline (DCVA) by vapor deposition. Modeling of these setups requires knowledge of three groups of properties: thermodynamic properties (heat capacity), transport properties (diffusion, viscosity, and thermal conductivity), and kinetic properties (rate constants for all possible elementary chemical reactions). These properties are evaluated using computational methods whenever experimental data is not available for the species or for the elementary reactions. The chemical vapor deposition model is applied to InN and DCVA. Several possible InN mechanisms are proposed and analyzed. The CVD model simulations of InN show that the deposition rate of InN is more efficient when pulsing chemistry is used under conditions of high pressure and microgravity. An analysis of the chemical properties of DCVA show that DCVA dimers may form under certain conditions of physical vapor transport. CVD simulations of the DCVA system suggest that deposition of the DCVA dimer may play a small role in the film and crystal growth processes.

  15. Enhanced Bactericidal Activity of Silver Thin Films Deposited via Aerosol-Assisted Chemical Vapor Deposition.

    PubMed

    Ponja, Sapna D; Sehmi, Sandeep K; Allan, Elaine; MacRobert, Alexander J; Parkin, Ivan P; Carmalt, Claire J

    2015-12-30

    Silver thin films were deposited on SiO2-barrier-coated float glass, fluorine-doped tin oxide (FTO) glass, Activ glass, and TiO2-coated float glass via AACVD using silver nitrate at 350 °C. The films were annealed at 600 °C and analyzed by X-ray powder diffraction, X-ray photoelectron spectroscopy, UV/vis/near-IR spectroscopy, and scanning electron microscopy. All the films were crystalline, and the silver was present in its elemental form and of nanometer dimension. The antibacterial activity of these samples was tested against Escherichia coli and Staphylococcus aureus in the dark and under UV light (365 nm). All Ag-deposited films reduced the numbers of E. coli by 99.9% within 6 h and the numbers of S. aureus by 99.9% within only 2 h. FTO/Ag reduced bacterial numbers of E. coli to below the detection limit after 60 min and caused a 99.9% reduction of S. aureus within only 15 min of UV irradiation. Activ/Ag reduced the numbers of S. aureus by 66.6% after 60 min and TiO2/Ag killed 99.9% of S. aureus within 60 min of UV exposure. More remarkably, we observed a 99.9% reduction in the numbers of E. coli within 6 h and the numbers of S. aureus within 4 h in the dark using our novel TiO2/Ag system.

  16. Chemical reactions in TEOS/ozone chemical vapor deposition[TetraEthylOrtho Silicate

    SciTech Connect

    HO,PAULINE

    2000-02-01

    A reaction mechanism for TEOS/O{sub 3} CVD in a SVG/WJ atmospheric pressure furnace belt reactor has been developed and calibrated with experimental deposition rate data. One-dimensional simulations using this mechanism successfully reproduce the trends observed in a set of 31 experimental runs in a WJ-TEOS999 reactor. Two-dimensional simulations using this mechanism successfully reproduce the average deposition rates for 3 different experimental conditions in a WJ-1500TF reactor, although the deposition profiles predicted by the model are flatter than the experimental static prints.

  17. Chemical bath deposition of thin film cadmium selenide for photoelectrochemical cells

    SciTech Connect

    Boudreau, R.A.; Raugh, R.D.

    1983-02-01

    Chemical bath deposition provides an attractive, low cost method of producing cadmium chalcogenide thin films. Intimate contact between the bath solution and the substrate material permits uniform deposition on substrates of complex geometry, presently difficult with spray pyrolysis, vacuum evaporation, or electrodeposition techniques. For CdSe, rigorous control of deposition conditions promotes the formation of a hexagonal, specularly reflecting deposit rather than a less desirable sphalerite (cubic) powdery deposit. Scanning electron microscopy reveals a small grained layered plate morphology similar to that produced by the evaporation method. Specularly reflecting CdSe films can be formed over large area substrates at a thickness optimal for their use as photoelectrochemical cells (PEC). Employing polysulfide as the redox couple, conversion efficiencies as high as 6.8% have been achieved in the authors' laboratory for these films using a tungstenhalogen white light source.

  18. Nanocrystalline CuInSSe thin films by chemical bath deposition technique

    SciTech Connect

    Shrotriya, Vipin Rajaram, P.

    2016-05-06

    Crystalline CuInSSe thin films have been deposited on glass substrate by chemical bath deposition technique. The CuCl{sub 2}, InCl{sub 3}, thiourea and SeO{sub 2} were used as source materials for the Cu{sup 2+}, In{sup 3+}, S{sup 2−} and Se{sup 2−} ions and the Cu/In ratio was kept at 1.0. EDC was used as a complexing agent. The XRD, Scanning Electron Microscope (SEM), Energy Dispersive Analysis of X-Ray (EDAX) and Optical transmission studies were used for structural analysis, surface morphology, elemental analysis and optical band gap, of the grown thin films respectively. The deposition parameters such as pH, deposition temperature and deposition time were optimized.

  19. Nanocrystalline CuInSSe thin films by chemical bath deposition technique

    NASA Astrophysics Data System (ADS)

    Shrotriya, Vipin; Rajaram, P.

    2016-05-01

    Crystalline CuInSSe thin films have been deposited on glass substrate by chemical bath deposition technique. The CuCl2, InCl3, thiourea and SeO2 were used as source materials for the Cu2+, In3+, S2- and Se2- ions and the Cu/In ratio was kept at 1.0. EDC was used as a complexing agent. The XRD, Scanning Electron Microscope (SEM), Energy Dispersive Analysis of X-Ray (EDAX) and Optical transmission studies were used for structural analysis, surface morphology, elemental analysis and optical band gap, of the grown thin films respectively. The deposition parameters such as pH, deposition temperature and deposition time were optimized.

  20. Comparison of the chemical characteristics of the uranium deposits of the Morrison Formation in the Grants uranium region, New Mexico

    USGS Publications Warehouse

    Spirakis, C.S.; Pierson, C.T.

    1983-01-01

    Statistical treatment of the chemical data of samples from the northeast Church Rock area, Ruby deposit, Mariano Lake deposit, and the Ambrosia Lake district indicates that primary ore-forming processes concentrated copper, iron, magnesium, manganese, molybdenum, selenium, vanadium, yttrium, arsenic, organic carbon, and sulfur, along with uranium. A barium halo that is associated with all of these deposits formed from secondary processes. Calcium and strontium were also enriched in the ores by secondary processes. Comparison of the chemical characteristics of the redistributed deposits in the Church Rock district to the primary deposits in the Grants uranium region indicates that calcium, manganese, strontium, yttrium, copper, iron, magnesium, molybdenum, lead, selenium, and vanadium are separated from uranium during redistribution of the deposits in the Church Rock area. Comparisons of the chemical characteristics of the Church Rock deposits and the secondary deposits at Ambrosia Lake suggest some differences in the processes that were involved in the genesis of the redistributed deposits in these two areas.