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Sample records for chromium oxide thin

  1. Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

    SciTech Connect

    El-Atab, Nazek; Rizk, Ayman; Nayfeh, Ammar; Okyay, Ali K.

    2013-11-15

    A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO{sub 2} layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (V{sub t}) shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V V{sub t} shift, the memory with CrO{sub 2} layer has a low programming voltage of 7.2V. Moreover, the deep trapping levels in CrO{sub 2} layer allows for additional scaling of the tunnel oxide due to an increase in the retention time. In addition, the structure was simulated using Physics Based TCAD. The results of the simulation fit very well with the experimental results providing an understanding of the charge trapping and tunneling physics.

  2. Compact chromium oxide thin film resistors for use in nanoscale quantum circuits

    SciTech Connect

    Nash, C. R.; Fenton, J. C.; Constantino, N. G. N.; Warburton, P. A.

    2014-12-14

    We report on the electrical characterisation of a series of thin amorphous chromium oxide (CrO{sub x}) films, grown by dc sputtering, to evaluate their suitability for use as on-chip resistors in nanoelectronics. By increasing the level of oxygen doping, the room-temperature sheet resistance of the CrO{sub x} films was varied from 28 Ω/◻ to 32.6 kΩ/◻. The variation in resistance with cooling to 4.2 K in liquid helium was investigated; the sheet resistance at 4.2 K varied with composition from 65 Ω/◻ to above 20 GΩ/◻. All of the films measured displayed linear current–voltage characteristics at all measured temperatures. For on-chip devices for quantum phase-slip measurements using niobium–silicon nanowires, interfaces between niobium–silicon and chromium oxide are required. We also characterised the contact resistance for one CrO{sub x} composition at an interface with niobium–silicon. We found that a gold intermediate layer is favourable: the specific contact resistivity of chromium-oxide-to-gold interfaces was 0.14 mΩcm{sup 2}, much lower than the value for direct CrO{sub x} to niobium–silicon contact. We conclude that these chromium oxide films are suitable for use in nanoscale circuits as high-value resistors, with resistivity tunable by oxygen content.

  3. Chromium and Ruthenium-Doped Zinc Oxide Thin Films for Propane Sensing Applications

    PubMed Central

    Gómez-Pozos, Heberto; González-Vidal, José Luis; Torres, Gonzalo Alberto; Rodríguez-Baez, Jorge; Maldonado, Arturo; de la Luz Olvera, María; Acosta, Dwight Roberto; Avendaño-Alejo, Maximino; Castañeda, Luis

    2013-01-01

    Chromium and ruthenium-doped zinc oxide (ZnO:Cr) and (ZnO:Ru) thin solid films were deposited on soda-lime glass substrates by the sol-gel dip-coating method. A 0.6 M solution of zinc acetate dihydrate dissolved in 2-methoxyethanol and monoethanolamine was used as basic solution. Chromium (III) acetylacetonate and Ruthenium (III) trichloride were used as doping sources. The Ru incorporation and its distribution profile into the films were proved by the SIMS technique. The morphology and structure of the films were studied by SEM microscopy and X-ray diffraction measurements, respectively. The SEM images show porous surfaces covered by small grains with different grain size, depending on the doping element, and the immersions number into the doping solutions. The sensing properties of ZnO:Cr and ZnO:Ru films in a propane (C3H8) atmosphere, as a function of the immersions number in the doping solution, have been studied in the present work. The highest sensitivity values were obtained for films doped from five immersions, 5.8 and 900, for ZnO:Cr and ZnO:Ru films, respectively. In order to evidence the catalytic effect of the chromium (Cr) and ruthenium (Ru), the sensing characteristics of undoped ZnO films are reported as well. PMID:23482091

  4. Stabilized chromium oxide film

    DOEpatents

    Nyaiesh, A.R.; Garwin, E.L.

    1986-08-04

    Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150A are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

  5. Stabilized chromium oxide film

    DOEpatents

    Garwin, Edward L.; Nyaiesh, Ali R.

    1988-01-01

    Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

  6. Reduction of a thin chromium oxide film on Inconel surface upon treatment with hydrogen plasma

    NASA Astrophysics Data System (ADS)

    Vesel, Alenka; Mozetic, Miran; Balat-Pichelin, Marianne

    2016-11-01

    Inconel samples with a surface oxide film composed of solely chromium oxide with a thickness of approximately 700 nm were exposed to low-pressure hydrogen plasma at elevated temperatures to determine the suitable parameters for reduction of the oxide film. The hydrogen pressure during treatment was set to 60 Pa. Plasma was created by a surfaguide microwave discharge in a quartz glass tube to allow for a high dissociation fraction of hydrogen molecules. Auger electron depth profiling (AES) was used to determine the decay of the oxygen in the surface film and X-ray diffraction (XRD) to measure structural modifications. During hydrogen plasma treatment, the oxidized Inconel samples were heated to elevated temperatures. The reduction of the oxide film started at temperatures of approximately 1300 K (considering the emissivity of 0.85) and the oxide was reduced in about 10 s of treatment as revealed by AES. The XRD showed sharper substrate peaks after the reduction. Samples treated in hydrogen atmosphere under the same conditions have not been reduced up to approximately 1500 K indicating usefulness of plasma treatment.

  7. Sodium sulfur container with chromium/chromium oxide coating

    DOEpatents

    Ludwig, Frank A.; Higley, Lin R.

    1981-01-01

    A coating of chromium/chromium oxide is disclosed for coating the surfaces of electrically conducting components of a sodium sulfur battery. This chromium/chromium oxide coating is placed on the surfaces of the electrically conducting components of the battery which are in contact with molten polysulfide and sulfur reactants during battery operation.

  8. Voltage Control of Exchange Bias in a Chromium Oxide Based Thin Film Heterostructure

    NASA Astrophysics Data System (ADS)

    Echtenkamp, Will; Street, Mike; Mahmood, Ather; Binek, Christian

    Controlling magnetism by electrical means is a key challenge in the field of spintronics, and electric control of exchange bias is one of the most promising routes to address this challenge. Isothermal electric control of exchange bias has been achieved near room temperature using bulk, single crystal, magnetoelectric Cr2O3. In this study the electrically-controlled exchange bias is investigated in an all thin film Cr2O3/PdCo exchange bias heterosystem where an MBE grown ferromagnetic and perpendicular anisotropic Pd/Co multilayer has been deposited on a PLD grown (0001) Cr2O3 thin film. Prototype devices are fabricated using lithography techniques. Using a process of magnetoelectric annealing, voltage control of exchange bias in Cr2O3 heterostructures is demonstrated with significant implications for scalability of ultra-low power memory and logical devices. In addition, the dependence of the exchange bias on the applied electric and magnetic fields are independently studied at 300K and isothermal voltage-controlled switching is investigated. This project was supported by SRC through CNFD, an SRC-NRI Center, by C-SPIN, part of STARnet, and by the NSF through MRSEC DMR-0820521.

  9. 21 CFR 73.3111 - Chromium oxide greens.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 1 2011-04-01 2011-04-01 false Chromium oxide greens. 73.3111 Section 73.3111... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Medical Devices § 73.3111 Chromium oxide greens. (a) Identity and specifications. The color additive chromium oxide greens (chromic oxide) (CAS Reg. No....

  10. 21 CFR 73.3111 - Chromium oxide greens.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 1 2014-04-01 2014-04-01 false Chromium oxide greens. 73.3111 Section 73.3111... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Medical Devices § 73.3111 Chromium oxide greens. (a) Identity and specifications. The color additive chromium oxide greens (chromic oxide) (CAS Reg. No....

  11. 21 CFR 73.3111 - Chromium oxide greens.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Chromium oxide greens. 73.3111 Section 73.3111... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Medical Devices § 73.3111 Chromium oxide greens. (a) Identity and specifications. The color additive chromium oxide greens (chromic oxide) (CAS Reg. No....

  12. 21 CFR 73.1327 - Chromium oxide greens.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 1 2013-04-01 2013-04-01 false Chromium oxide greens. 73.1327 Section 73.1327... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1327 Chromium oxide greens. (a) Identity. (1) The color additive chromium oxide greens is principally chromic sesquioxide (Cr2O3). (2) Color...

  13. 21 CFR 73.2327 - Chromium oxide greens.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Chromium oxide greens. 73.2327 Section 73.2327... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2327 Chromium oxide greens. (a) Identity and specifications. The color additive chromium oxide greens shall conform in identify and specifications to...

  14. 21 CFR 73.2327 - Chromium oxide greens.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 1 2013-04-01 2013-04-01 false Chromium oxide greens. 73.2327 Section 73.2327... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2327 Chromium oxide greens. (a) Identity and specifications. The color additive chromium oxide greens shall conform in identify and specifications to...

  15. 21 CFR 73.2327 - Chromium oxide greens.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 1 2011-04-01 2011-04-01 false Chromium oxide greens. 73.2327 Section 73.2327... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2327 Chromium oxide greens. (a) Identity and specifications. The color additive chromium oxide greens shall conform in identify and specifications to...

  16. 21 CFR 73.2327 - Chromium oxide greens.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 1 2014-04-01 2014-04-01 false Chromium oxide greens. 73.2327 Section 73.2327... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2327 Chromium oxide greens. (a) Identity and specifications. The color additive chromium oxide greens shall conform in identify and specifications to...

  17. 21 CFR 73.1327 - Chromium oxide greens.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 1 2014-04-01 2014-04-01 false Chromium oxide greens. 73.1327 Section 73.1327... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1327 Chromium oxide greens. (a) Identity. (1) The color additive chromium oxide greens is principally chromic sesquioxide (Cr2O3). (2) Color...

  18. 21 CFR 73.1327 - Chromium oxide greens.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 1 2012-04-01 2012-04-01 false Chromium oxide greens. 73.1327 Section 73.1327... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1327 Chromium oxide greens. (a) Identity. (1) The color additive chromium oxide greens is principally chromic sesquioxide (Cr2O3). (2) Color...

  19. 21 CFR 73.1327 - Chromium oxide greens.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 1 2011-04-01 2011-04-01 false Chromium oxide greens. 73.1327 Section 73.1327... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1327 Chromium oxide greens. (a) Identity. (1) The color additive chromium oxide greens is principally chromic sesquioxide (Cr2O3). (2) Color...

  20. 21 CFR 73.2327 - Chromium oxide greens.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 1 2012-04-01 2012-04-01 false Chromium oxide greens. 73.2327 Section 73.2327... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Cosmetics § 73.2327 Chromium oxide greens. (a) Identity and specifications. The color additive chromium oxide greens shall conform in identify and specifications to...

  1. 21 CFR 73.1327 - Chromium oxide greens.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Chromium oxide greens. 73.1327 Section 73.1327... COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1327 Chromium oxide greens. (a) Identity. (1) The color additive chromium oxide greens is principally chromic sesquioxide (Cr2O3). (2) Color...

  2. Chromium.

    PubMed

    Barceloux, D G

    1999-01-01

    Chromium occurs primarily in the trivalent state (III), which is the most stable form, or in the hexavalent state (VI), which is a strong oxidizing agent. Elemental chromium (0) does not occur naturally on earth. Trivalent chromium (III) is an essential trace metal necessary for the formation of glucose tolerance factor and for the metabolism of insulin. Commercial applications of chromium compounds include tanning (III), corrosion inhibition, plating, glassware-cleaning solutions, wood preservatives (VI), manufacture of safety matches, metal finishing (VI), and the production of pigments (III, VI). Hexavalent chromium (VI) contaminated local soil when chromium waste slag was part of the fill material present in residential, public, and industrial areas. In some urban areas, about two-thirds of the chromium in air results from the emission of hexavalent chromium from fossil fuel combustion and steel production. The remaining chromium in air is the trivalent form. The residence time of chromium in air is < 10 days, depending on the particle size. Trivalent compounds generally have low toxicity and the gastrointestinal tract poorly absorbs these compounds. Hexavalent chromium is a skin and mucous membrane irritant and some of these hexavalent compounds are strong corrosive agents. Hexavalent chromium compounds also produce an allergic contact dermatitis characterized by eczema. Sensitivity to trivalent compounds is much less frequent, but some workers may react to high concentrations of these compounds. Hexavalent chromium is recognized by the International Agency for Research on Cancer and by the US Toxicology Program as a pulmonary carcinogen. The increased risk of lung cancer occurs primarily in workers exposed to hexavalent chromium dust during the refining of chromite ore and the production of chromate pigments. Although individual studies suggest the possibility of an excess incidence of cancer at sites outside the lung, the results from these studies are

  3. Production of Chromium Oxide from Turkish Chromite Concentrate Using Ethanol

    NASA Astrophysics Data System (ADS)

    Aktas, S.; Eyuboglu, C.; Morcali, M. H.; Özbey, S.; Sucuoglu, Y.

    2015-05-01

    In this study, the possibility of chromium extraction from Turkish chromite concentrate and the production of chromium oxide were investigated. For the conversion of chromium(III) into chromium(VI), NaOH was employed, as well as air with a rate of 20 L/min. The effects of the base amount, fusing temperature, and fusing time on the chromium conversion percentage were investigated in detail. The conversion kinetics of chromium(III) to chromium(VI) was also undertaken. Following the steps of dissolving the sodium chromate in water and filtering, aluminum hydroxide was precipitated by adjusting the pH level of the solution. The chromium(VI) solution was subsequently converted to Cr(III) by the combination of sulfuric acid and ethanol. Interestingly, it was observed that ethanol precipitated chromium as chromium(VI) at mildly acidic pH levels, although this effect is more pronounced for K2Cr2O7 than Na2Cr2O7. On the other hand, in the strongly acidic regime, ethanol acted as a reducing agent role in that chromium(VI) was converted into Cr(III) whereas ethanol itself was oxidized to carbon dioxide and water. Subsequently, chromium hydroxide was obtained by the help of sodium hydroxide and converted to chromium oxide by heating at 800 °C, as indicated in thermo gravimetric analysis (TGA).

  4. Cytotoxicity and oxidative mechanisms of different forms of chromium.

    PubMed

    Bagchi, Debasis; Stohs, Sidney J; Downs, Bernard W; Bagchi, Manashi; Preuss, Harry G

    2002-10-30

    Chromium exists mostly in two valence states in nature: hexavalent chromium [chromium(VI)] and trivalent chromium [chromium(III)]. Chromium(VI) is commonly used in industrial chrome plating, welding, painting, metal finishes, steel manufacturing, alloy, cast iron and wood treatment, and is a proven toxin, mutagen and carcinogen. The mechanistic cytotoxicity of chromium(VI) is not completely understood, however, a large number of studies demonstrated that chromium(VI) induces oxidative stress, DNA damage, apoptotic cell death and altered gene expression. Conversely, chromium(III) is essential for proper insulin function and is required for normal protein, fat and carbohydrate metabolism, and is acknowledged as a dietary supplement. In this paper, comparative concentration- and time-dependent effects of chromium(VI) and chromium(III) were demonstrated on increased production of reactive oxygen species (ROS) and lipid peroxidation, enhanced excretion of urinary lipid metabolites, DNA fragmentation and apoptotic cell death in both in vitro and in vivo models. Chromium(VI) demonstrated significantly higher toxicity as compared with chromium(III). To evaluate the role of p53 gene, the dose-dependent effects of chromium(VI) were assessed in female C57BL/6Ntac and p53-deficient C57BL/6TSG p53 mice on enhanced production of ROS, lipid peroxidation and DNA fragmentation in hepatic and brain tissues. Chromium(VI) induced more pronounced oxidative damage in multiple target organs in p53 deficient mice. Comparative studies of chromium(III) picolinate and niacin-bound chromium(III), two popular dietary supplements, reveal that chromium(III) picolinate produces significantly more oxidative stress and DNA damage. Studies have implicated the toxicity of chromium picolinate in renal impairment, skin blisters and pustules, anemia, hemolysis, tissue edema, liver dysfunction; neuronal cell injury, impaired cognitive, perceptual and motor activity; enhanced production of hydroxyl

  5. Dimensionally Controlled Lithiation of Chromium Oxide

    SciTech Connect

    Fister, Tim T.; Hu, Xianyi; Esbenshade, Jennifer; Chen, Xiao; Wu, Jinsong; Dravid, Vinayak; Bedzyk, Michael; Long, Brandon; Gewirth, Andrew A.; Shi, Bing; Schlepütz, Christian M.; Fenter, Paul

    2016-01-12

    Oxide conversion reactions are an alternative approach for high capacity lithium ion batteries but are known to suffer from structural irreversibility associated with the phase separation and reconstitution of reduced metal species and Li2O. In particular, the morphology of the reduced metal species is thought to play a critical role in the electrochemical properties of a conversion material. Here we use a model electrode with alternating layers of chromium and chromium oxide to better understand and control these phase changes in real-time and at molecular length scales. Despite lacking crystallinity at the atomic scale, this superstructure is observed (with X-ray reflectivity, XR) to lithiate and delithiate in a purely one-dimensional manner, preserving the layered structure. The XR data show that the metal layers act as nucleation sites for the reduction of chromium in the conversion reaction. Irreversibility during delithiation is due to the formation of a ternary phase, LiCrO2, which can be further delithiated at higher potentials. The results reveal that the combination of confining lithiation to nanoscale sheets of Li2O and the availability of reaction sites in the metal layers in the layered structure is a strategy for improving the reversibility and mass transport properties that can be used in a wide range of conversion materials.

  6. Chromium oxidation state mapping in human cells

    NASA Astrophysics Data System (ADS)

    Ortega, R.; Fayard, B.; Salomé, M.; Devès, G.; Susini, J.

    2003-03-01

    The widespread use of chromium in industrial applications such as chemical production of pigments, refractory brick production, tanning, metallurgy, electroplating, and combustion of fuels has lead to human occupational exposure and to its increased introduction into the environment. Hexavalent chromium compounds are established carcinogens but their mechanism of cell transformation is not known. Up to now, no microanalytical technique was sensitive enough to allow the observation of chromium distribution, and oxidation state identification, within isolated cells at carcinogenic concentrations. In this experiment, we used successfully the ID-21 X-ray microscope to map Cr(VI) and total Cr distributions in cells exposed in vitro to soluble, and insoluble, Cr(VI) compounds. Exposure to soluble compounds, weak carcinogens, resulted in a homogeneous intracellular distribution of Cr, confirming by in situ measurement that Cr is present in the cell nucleus. Cr(VI) was never detected in cells which suggests a mechanism of rapid intracellular reducticn. On the other hand, exposure to insoluble compounds, strong carcinogens, also resulted in a homogeneous distribution of reduced forms of Cr in cells, and their nucleus. However, in this case, Cr(VI)-rich structures were observed into the cells suggesting that carcinogenicity is enhanced when oxidation reactions due to Cr(VI) chronic exposure are associated to Cr-DNA alterations.

  7. Self-Lubricating Composite Containing Chromium Oxide

    NASA Technical Reports Server (NTRS)

    Dellacorte, Christopher (Inventor); Edmonds, Brian J. (Inventor)

    1999-01-01

    A self lubricating. friction and wear reducing composite material useful over a wide temperature range of from cryogenic temperature up to about 900 C. contains 60 80 wt. % of particulate Cr2O3, dispersed in a metal binder of a metal alloy containing Cr and at least 50 wt. % of Ni, Cr or a mature of Ni and Cr. It also contains 5-20 wt. % of a fluoride of at least one Group I, Group II or rare earth metal and. optionally, 5-20 wt. % of a low temperature lubricant metal, such as Ag. Au, Pt, Pd, Rh and Cu. This composite exhibits less oxidation instability and less abrasiveness than composites containing chromium carbide, is readily applied using plasma spray and can be ground and polished with a silicon carbide abrasive.

  8. An X-Ray Diffraction Study of Chromium-Gold Thin Films.

    DTIC Science & Technology

    The chromium-gold thin films system was studied using direct recording X-ray diffraction. Chromium and/or gold thin films were deposited, in vacuum...onto glass substrates at ambient and elevated temperatures. Those thin films deposited at ambient temperatures were later annealed. The resultant X-ray

  9. Enhancement of oxidative vaporization of chromium (III) oxide and chromium by oxygen atoms

    NASA Technical Reports Server (NTRS)

    Fryburg, G. C.; Kohl, F. J.; Stearns, C. A.

    1974-01-01

    Rates of oxidative vaporization of Cr2O3 were found to be markedly enhanced in the presence of O atoms. Investigations were conducted over the temperature range 470 to 1520 K. For Cr2O3 the enhancement was about 10 to the 9th power at 820 K in oxygen containing 2.5 percent atoms. Rapid oxidative vaporization of bare chromium was observed below 1070 K, the rate being about one-half that of Cr2O3. Results are interpreted in terms of thermochemical analysis.

  10. 21 CFR 73.1015 - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ...), not more than 30 parts per million. Arsenic (as As), not more than 3 parts per million. Total oxides of aluminum, chromium, and cobalt not less than 97 percent. Lead and arsenic shall be determined...

  11. The effect of chromium oxyhydroxide on solid oxide fuel cells.

    SciTech Connect

    Krumpelt, M.; Cruse, T. A.; Ingram, B. J.; Routbort, J. L.; Wang, S.; Salvador, P. A.; Chen, G.; Carnegie Mellon Univ.; NETL; Ohio Univ.

    2010-01-01

    Hexavalent chromium species like the oxyhydroxide, CrO{sub 2}(OH){sub 2}, or hexoxide, CrO{sub 3}, are electrochemically reduced to Cr{sub 2}O{sub 3} in solid oxide fuel cells and adversely affect the cell operating potentials. Using a narrowly focused beam from the Advanced Photon Source, such chromium oxide deposits were unequivocally identified in the active region of the cathode by X-ray diffraction, suggesting that the triple phase boundaries were partially blocked. Under fuel cell operating conditions, the reaction has an equilibrium potential of about 0.9 V and the rate of chromium oxide deposition is therefore dependent on the operating potential of the cell. It becomes diffusion limited after several hours of steady operation. At low operating potentials, lanthanum manganite cathodes begin to be reduced to MnO, which reacts with the chromium oxide to form the MnCr{sub 2}O{sub 4} spinel.

  12. Achieving Zero Stress in Iridium, Chromium, and Nickle Thin Films

    NASA Technical Reports Server (NTRS)

    Broadway, David M.; Weimer, Jeffrey; Gurgew, Danielle; Lis, Tomasz; Ramsey, Brian D.; O'Dell, Stephen L.; Ames, A.; Bruni, R.

    2015-01-01

    We examine a method for achieving zero intrinsic stress in thin films of iridium, chromium, and nickel deposited by magnetron sputter deposition. The examination of the stress in these materials is motivated by efforts to advance the optical performance of light-weight x-ray space telescopes into the regime of sub-arc second resolution that rely on control of the film stress to values within 10-100 MPa. A characteristic feature of the intrinsic stress behavior in chromium and nickel is their sensitivity to the magnitude and sign of the intrinsic stress with argon gas pressure, including the existence of a critical pressure that results in zero film stress. This critical pressure scales linearly with the film's density. While the effect of stress reversal with argon pressure has been previously reported by Hoffman and others for nickel and chromium, we have discovered a similar behavior for iridium. Additionally, we have identified zero stress in iridium shortly after island coalescence. This feature of film growth is used for achieving a total internal stress of -2.89 MPa for a 15.8 nm thick iridium film. The surface roughness of this low-stress film was examined using scanning probe microscopy (SPM) and x-ray reflectivity (XRR) at CuKa and these results presented and discussed.

  13. Dielectric properties of polyamide 12-chromium(III) oxide nanocomposites

    NASA Astrophysics Data System (ADS)

    Zuev, Vjacheslav V.; Shapoval, Ekaterina S.; Sakhatskii, Aleksandr S.

    2016-08-01

    Broadband dielectric spectroscopy was employed to study polymer nanocomposites based on PA12 filled with of nanosized chromium(III) oxide. The experimental dielectric data were analyzed within the formalisms of complex permittivity and electric modulus. Three relaxation processes and Maxwell-Wagner-Sillars (MWS) interfacial polarizations were observed. It was found that presence of nanosized amphoteric chromium(III) oxide leads to softening of polyamide matrix that manifested in decrease of the activation energy of the α- and β-relaxation processes and glass transition temperatures. The softening of polymer matrix is the reason of the decrease of mechanical strength of polymer nanocomposites as compared with neat PA12.

  14. Ageing of chromium(III)-bearing slag and its relation to the atmospheric oxidation of solid chromium(III)-oxide in the presence of calcium oxide.

    PubMed

    Pillay, K; von Blottnitz, H; Petersen, J

    2003-09-01

    Slag arising in ferrochromium and stainless steel production is known to contain residual levels of trivalent chromium. As the chromium is normally bound in the slag matrix in various silicate or spinel phases, and hence not easily mobilised, utilisation or controlled disposal of such slag is generally considered unproblematic. Experimental test work with a number of slag materials indicates, however, that very gradual oxidation of trivalent to hexavalent chromium does occur when the slag is exposed to atmospheric oxygen, rendering a quantifiable but small portion of chromium in this much more mobile and toxic form. Mechanisms and rates of the oxidation reaction were investigated in a number of long-term studies using both original slag materials and artificial mixes of chromium and calcium oxides. Powders of these materials, some of them rolled into balls, were left to age under different conditions for periods of up to 12 months. In the slag samples, which contained between 1 and 3 wt.% chromium, 1000-10000 microg Cr(VI) were found per gram of chromium within 6-9 months of exposure to an ambient atmosphere. The rate of the oxidation reaction decreased exponentially, and the reaction could generally be said to have ceased within 12 months. In mixtures of calcium and chromium oxides the oxidation reaction is presumed to occur at the boundaries between chromium oxide and calcium oxide phases through diffusion of oxygen along the grain boundaries and of Cr(3+) across the boundaries, resulting in the formation of calcium chromate. In the slags, where calcium and chromium oxide can form a solid solution, the oxidation is likely to occur at the exposed surface of grains containing this solution.

  15. 21 CFR 73.3110a - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... 21 Food and Drugs 1 2011-04-01 2011-04-01 false Chromium-cobalt-aluminum oxide. 73.3110a Section... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Medical Devices § 73.3110a Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide (Pigment Blue 36) (CAS Reg....

  16. 21 CFR 73.3110a - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Chromium-cobalt-aluminum oxide. 73.3110a Section... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Medical Devices § 73.3110a Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide (Pigment Blue 36) (CAS Reg....

  17. 21 CFR 73.3110a - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2014 CFR

    2014-04-01

    ... 21 Food and Drugs 1 2014-04-01 2014-04-01 false Chromium-cobalt-aluminum oxide. 73.3110a Section... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Medical Devices § 73.3110a Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide (Pigment Blue 36) (CAS Reg....

  18. Chromium recovery from tannery sludge with saponin and oxidative remediation.

    PubMed

    Kiliç, Eylem; Font, Joaquim; Puig, Rita; Colak, Selime; Celik, Deniz

    2011-01-15

    Two new methods for treatment of tannery sludge were studied to achieve cost-effective and environmentally acceptable remediation solutions for high chromium containing tannery sludge. Quillaja bark saponin, a plant derived biosurfactant, was applied to dewatered tannery sludge for chromium recovery and a comparative assessment with H(2)O(2) oxidative treatment method is presented. Tannery sludge samples were treated on a laboratory scale with saponin in the pH range 2-3. The effects of various factors like time, concentration of saponin, pH, and temperature on the extraction of chromium were studied. The treatment with saponin extracted 24% of Cr from tannery sludge at a pH around2, performing multiple wash of 6h, at 33 °C. On the other hand, the H(2)O(2) treatment, which include Cr(III) oxidation to Cr(VI) and extraction with sulfuric acid solution at pH 2, enabled to extract 70% of chromium within less than 4h at room temperature (21 °C). The results indicate that the extraction efficiency of saponin was strongly dependent on the organic matter content of the sample, which affects chromium mobility by its high adsorption capacity. On the other hand hydrogen peroxide treatment is effective and the duration of the process is short and requires cheap chemicals and moderate conditions.

  19. 21 CFR 73.1015 - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... drug application, pursuant to section 505 of the Federal Food, Drug, and Cosmetic Act, is in effect for... 21 Food and Drugs 1 2013-04-01 2013-04-01 false Chromium-cobalt-aluminum oxide. 73.1015 Section 73.1015 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES...

  20. 21 CFR 73.1015 - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... drug application, pursuant to section 505 of the Federal Food, Drug, and Cosmetic Act, is in effect for... 21 Food and Drugs 1 2012-04-01 2012-04-01 false Chromium-cobalt-aluminum oxide. 73.1015 Section 73.1015 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES...

  1. 21 CFR 73.3111 - Chromium oxide greens.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 1 2012-04-01 2012-04-01 false Chromium oxide greens. 73.3111 Section 73.3111 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF... required to accomplish the intended coloring effect. (2) Authorization and compliance with this use...

  2. 21 CFR 73.3111 - Chromium oxide greens.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 1 2013-04-01 2013-04-01 false Chromium oxide greens. 73.3111 Section 73.3111 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL LISTING OF... required to accomplish the intended coloring effect. (2) Authorization and compliance with this use...

  3. Corrosion, ion release and Mott-Schottky probe of chromium oxide coatings in saline solution with potential for orthopaedic implant applications

    NASA Astrophysics Data System (ADS)

    Ogwu, A. A.; Oje, A. M.; Kavanagh, J.

    2016-04-01

    We report our investigation on chromium oxide thin film coatings that show a negligible ion release during electrochemical corrosion testing in saline solution. The chemical constituents of the films prepared by reactive magnetron sputtering were identified to be predominantly Cr2O3 based on Raman spectroscopy anti-symmetric stretching vibration modes for CrIII-O and other peaks and an FTIR spectroscopy E u vibrational mode at 409 cm-1. X-ray photoelectron spectroscopy, multiplet fitting for 2P 3/2 and 2P 1/2 states also confirmed the predominantly Cr2O3 stoichiometry in the films. The prepared chromium oxide coatings showed superior pitting corrosion resistance compared to the native chromium oxide films on bare uncoated stainless steel when tested under open circuit potential, potentiodynamic polarisation and cyclic voltammetry in saline solution. The chromium ion released into solution during the corrosion testing of stainless steel substrates coated with chromium oxide coatings was found to be negligibly small based on atomic absorption spectroscopy measurements. Our Mott-Schottky analysis investigation showed that the negligibly small ion release from the chromium oxide coated steel substrates is most likely due to a much lower defect density on the surface of the deposited coatings compared to the native oxide layer on the uncoated steel substrates. This opens up the opportunity for using chromium oxide surface coatings in hip, knee and other orthopaedic implants where possible metal ion release in vivo still poses a great challenge.

  4. Three-dimensional morphology control during wet chemical synthesis of porous chromium oxide spheres.

    PubMed

    Chen, Lifang; Song, Zhi; Wang, Xue; Prikhodko, Sergey V; Hu, Juncheng; Kodambaka, Suneel; Richards, Ryan

    2009-09-01

    Controlling the morphological evolution in nanostructures is essential for improving their functionality, for example, in catalysis. Here, we demonstrate, using chromium oxide as a model system, that morphologies of functional binary oxide particles can be tailored by an efficient template-free synthetic approach. We construct a morphological "phase diagram" for chromium oxide spheres that shows the evolution of size and surface roughness as a function of the precursor and urea concentrations. It is notable that these chromium oxide spheres show an exceptional ability to remove azo-dye pollutant in water treatment. Thus, the porous chromium oxide spheres with very good dye absorptions are expected to be useful in alternative absorption technologies.

  5. The influence of substrate temperature on the tribo- mechanical properties of chromium nitride thin films

    NASA Astrophysics Data System (ADS)

    Merie, V. V.; Negrea, G.; Modi, E.

    2016-08-01

    Different nitrides such as titanium nitride, chromium nitride and so on are used in a widespread range of applications such as cutting tools, medical implants, and microelectromechanical devices and all that due to their mechanical, physical and chemical properties. The aim of this study is to obtain chromium nitride thin films and to characterize them by atomic force microscopy investigations. The chromium nitride thin films were deposited by reactive magnetron sputtering on silicon substrates. During the deposition process, the discharge current, the argon and nitrogen flows, the pressure inside the chamber and the deposition time were kept constant. A chromium target with a purity of 99.95 % was used. Some of the films were deposited after a chromium buffer layer was previously deposited on the silicon substrate. The deposition was carried out when substrate temperature was at room temperature, at 300 and 500°C respectively. Once the films were deposited, atomic force microscopy investigations were performed in order to emphasize the influence of the substrate temperature on the topographical, mechanical and tribological characteristics. The results pointed out an important influence of the substrate temperature on topographical, mechanical and tribological properties of the investigated chromium nitride thin films.

  6. Structural, morphological and optical properties of chromium oxide nanoparticles

    SciTech Connect

    Babukutty, Blessy; Parakkal, Fasalurahman; Nair, Swapna S.; Bhalero, G. M.; Aravind, P. B.

    2015-06-24

    Chromium oxide nanoparticles are synthesized by reduction route from chloride precursors with surfactant, trioctylphosphine oxide (TOPO). Structural and morphological characterization are analyzed using X-ray Diffraction (XRD) and Transmission Electron Microscopy (TEM). Transmission Electron micrographs show that the average grain size lies in the range 5nm to 10nm. Optical characterization has been done by UV-VIS spectrophotometer. Distinct optical absorptions of Cr{sup 3+} ions show hinting towards the presence of Cr{sub 2}O{sub 3}. Presence of oxygen is also confirmed from Electron Energy Loss Spectroscopy (EELS) studies.

  7. Effective bioleaching of chromium in tannery sludge with an enriched sulfur-oxidizing bacterial community.

    PubMed

    Zeng, Jing; Gou, Min; Tang, Yue-Qin; Li, Guo-Ying; Sun, Zhao-Yong; Kida, Kenji

    2016-10-01

    In this study, a sulfur-oxidizing community was enriched from activated sludge generated in tannery wastewater treatment plants. Bioleaching of tannery sludge containing 0.9-1.2% chromium was investigated to evaluate the effectiveness of the enriched community, the effect of chromium binding forms on bioleaching efficiency, and the dominant microbes contributing to chromium bioleaching. Sludge samples inoculated with the enriched community presented 79.9-96.8% of chromium leaching efficiencies, much higher than those without the enriched community. High bioleaching efficiencies of over 95% were achieved for chromium in reducible fraction, while 60.9-97.9% were observed for chromium in oxidizable and residual fractions. Acidithiobacillus thiooxidans, the predominant bacteria in the enriched community, played an important role in bioleaching, whereas some indigenous heterotrophic species in sludge might have had a supporting role. The results indicated that A. thiooxidans-dominant enriched microbial community had high chromium bioleaching efficiency, and chromium binding forms affected the bioleaching performance.

  8. Chromium

    Technology Transfer Automated Retrieval System (TEKTRAN)

    The effects of chromium (Cr) on glucose and insulin metabolism are well documented. Normal dietary intake of Cr appears to be suboptimal because several studies have reported beneficial effects of Cr in people with elevated blood glucose or type 2 diabetes eating conventional diets. Stresses that ...

  9. Luminescent properties of alumina ceramics doped with chromium oxide

    NASA Astrophysics Data System (ADS)

    Kortov, V.; Kiryakov, A.; Pustovarov, V.

    2016-08-01

    Ceramics doped with chromium oxide were synthesized from alumina nanopowder at high heating and cooling rates. XRD analysis of the obtained samples shows that they consist mainly of Al2O3 α-phase. Photoluminescence (PL) spectra in the visible spectral region and thermoluminescence (TL) curves were measured. An effect of the dopant concentration on the intensity and shape of the PL bands as well as on the TL yield was found. Annealing of the quenching defects which emerged during the synthesis changed the PL spectra. The centers responsible for PL and TL in the synthesized ceramics were identified.

  10. Development of RF sputtered chromium oxide coating for wear application

    NASA Technical Reports Server (NTRS)

    Bhushan, B.

    1979-01-01

    The radio frequency sputtering technique was used to deposite a hard refractory, chromium oxide coating on an Inconel X-750 foil 0.1 mm thick. Optimized sputtering parameters for a smooth and adherent coating were found to be as follows: target-to-substrate spacing, 41.3 mm; argon pressure, 5-10 mTorr; total power to the sputtering module, 400 W (voltage at the target, 1600 V), and a water-cooled substrate. The coating on the annealed foil was more adherent than that on the heat-treated foil. Substrate biasing during the sputter deposition of Cr2O3 adversely affected adherence by removing naturally occurring interfacial oxide layers. The deposited coatings were amorphous and oxygen deficient. Since amorphous materials are extremely hard, the structure was considered to be desirable.

  11. Teaching the Properties of Chromium's Oxidation States with a Case Study Method

    ERIC Educational Resources Information Center

    Ozdilek, Zehra

    2015-01-01

    The purpose of this study was to investigate how a mixed-method case study affects pre-service science teachers' awareness of hexavalent chromium pollution and content knowledge about the properties of chromium's different oxidation states. The study was conducted in Turkey with 55 sophomores during the fall semester of 2013-2014. The students…

  12. Investigation of structural properties of chromium thin films prepared by a plasma focus device

    NASA Astrophysics Data System (ADS)

    Javadi, S.; Habibi, M.; Ghoranneviss, M.; Lee, S.; Saw, S. H.; Behbahani, R. A.

    2012-08-01

    We report the synthesis of chromium thin films on Si(400) substrates by utilizing a low-energy (1.6 kJ) plasma focus device. The films of chromium are deposited with different numbers of focus shots (15, 25 and 35) at a distance of 8 cm and at 0° angular position with respect to the anode axis. The films are investigated structurally by x-ray diffraction analysis and morphologically by atomic force microscopy and scanning electron microscopy. The elemental composition is characterized by energy dispersive x-ray analysis. Furthermore, Vicker's micro hardness is used to study the mechanical properties of the deposited films. The degree of crystallinity of chromium films, the size of the particles and the hardness values of the films increase when the number of focus shots is raised from 15 to 25 and then decrease when the substrate is treated with 35 shots. We discuss the dynamic processes involved in the formation of the chromium films.

  13. Adhesion analysis for chromium nitride thin films deposited by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Rusu, F. M.; Merie, V. V.; Pintea, I. M.; Molea, A.

    2016-08-01

    The thin film industry is continuously growing due to the wide range of applications that require the fabrication of advanced components such as sensors, biological implants, micro-electromechanical devices, optical coatings and so on. The selection regarding the deposition materials, as well as the deposition technology influences the properties of the material and determines the suitability of devices for certain real-world applications. This paper is focused on the adhesion force for several chromium nitride thin films obtained by reactive magnetron sputtering. All chromium nitride thin films were deposited on a silicon substrate, the discharge current and the argon flow being kept constant. The main purpose of the paper is to determine the influence of deposition parameters on the adhesion force. Therefore some of the deposition parameters were varied in order to study their effect on the adhesion force. Experimentally, the values of the adhesion force were determined in multiple points for each sample using the spectroscopy in point mode of the atomic force microscope. The obtained values were used to estimate the surface energy of the CrN thin films based on two existing mathematical models for the adhesion force when considering the contact between two bodies.

  14. Development of Alkaline Oxidative Dissolution Methods for Chromium (III) Compounds Present in Hanford Site Tank Sludges

    SciTech Connect

    NN Krot; VP Shilov; AM Fedoseev; NA Budantseva; MV Nikonov; AB Yusov; AYu Garnov; IA Charushnikova; VP Perminov; LN Astafurova; TS Lapitskaya; VI Makarenkov

    1999-07-02

    The high-level radioactive waste sludge in the underground storage tanks at the Hanford Site contains various chromium(III)solid phases. Dissolution and removal of chromium from tank waste sludges is desirable prior to high-level waste vitrification because increased volume is required to incorporate the residual chromium. Unfortunately, dissolution of chromium from the sludge to form Cr(OH){sub 4}{sup {minus}} through treatment with heated NaOH solution (also used to dissolve aluminum phases and metathesize phosphates to sodium salts) generally has been unsuccessful in tests with both simulated and genuine Hanford waste sludges. Oxidative dissolution of the Cr(III) compounds to form soluble chromate has been proposed as an alternative chromium solid phase dissolution method and results of limited prior testing have been reported.

  15. Oxidative vaporization kinetics of chromium (III) oxide in oxygen from 1270 to 1570 K

    NASA Technical Reports Server (NTRS)

    Stearns, C. A.; Kohl, F. J.; Fryburg, G. C.

    1974-01-01

    Rates of oxidative vaporization of Cr2O3 on preoxidized resistively heated chromium were determined in flowing oxygen at 0.115 torr for temperatures from 1270 to 1570 K. Reaction controlled rates were obtained from experimental rates by a gold calibration technique. These rates were shown to agree with those predicted by thermochemical analysis. The activation energy obtained for the oxidative vaporation reaction corresponded numerically with the thermochemical enthalpy of the reaction. A theoretical equation is given for calculating the rate from thermodynamic data by using boundary layer theory.

  16. Oxidation of Palladium-Chromium Alloys for High Temperature Applications

    NASA Technical Reports Server (NTRS)

    Piltch, Nancy D.; Jih-Fen, Lei; Zeller, Mary V.

    1994-01-01

    An alloy consisting of Pd with 13 wt % Cr is a promising material for high temperature applications. High temperature performance is degraded by the oxidation of the material, which is more severe in the fine wires and thin films used for sensor applications than in the bulk. The present study was undertaken to improve our understanding of the physical and chemical changes occurring at these temperatures and to identify approaches to limit oxidation of the alloy. The alloy was studied in both ribbon and wire forms. Ribbon samples were chosen to examine the role of grain boundaries in the oxidation process because of the convenience of handling for the oxidation studies. Wire samples 25 microns in diameter which are used in resistance strain gages were studied to correlate chemical properties with observed electrical, physical, and structural properties. Overcoating the material with a metallic Cr film did prevent the segregation of Pd to the surface; however, it did not eliminate the oxidation of the alloy.

  17. Thin film hydrous metal oxide catalysts

    DOEpatents

    Dosch, Robert G.; Stephens, Howard P.

    1995-01-01

    Thin film (<100 nm) hydrous metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

  18. Deposition of Chromium Thin Films on Stainless Steel-304 Substrates Using a Low Energy Plasma Focus Device

    NASA Astrophysics Data System (ADS)

    Javadi, S.; Ghoranneviss, M.; Hojabri, A.; Habibi, M.; Hosseinnejad, M. T.

    2012-06-01

    In this paper, we study thin films of chromium deposited on stainless steel-304 substrates using a low energy (1.6 kJ) plasma focus device. The films of chromium are likewise deposited with 25 focus shots each at various axial distances from the top of the anode (3, 5, 7, 9 and 11 cm). We also consider different angular positions with respect to the anode axis (0°, 15° and 30°) at a distance of 5 cm from the anode tip to deposit the chromium films on the stainless steel substrates. To characterize the structural properties of the films, we benefit from X-ray diffraction (XRD) analysis. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) are applied as well to study the surface morphology of these deposited films. Furthermore, we make use of Vicker's micro-hardness measurements to investigate the mechanical properties of chromium thin films. The XRD results show that the degree of crystallinity of chromium thin films depends on the substrate axial and angular positions. The AFM images illustrate that the film deposited at the distance of 5 cm and the angular position of 0° has quite a uniform surface with homogeneous distribution of grains on the film surface. From the hardness results, we observe that the sample deposited at the axial distance of 5 cm from the anode tip and at the angle of 0° with respect to the anode axis, is harder than the other deposited films.

  19. Chromium (VI)-induced oxidative stress, apoptotic cell death and modulation of p53 tumor suppressor gene.

    PubMed

    Bagchi, D; Bagchi, M; Stohs, S J

    2001-06-01

    Chromium (VI) is a widely used industrial chemical, extensively used in paints, metal finishes, steel including stainless steel manufacturing, alloy cast irons, chrome, and wood treatment. On the contrary, chromium (III) salts such as chromium polynicotinate, chromium chloride and chromium picolinate, are used as micronutrients and nutritional supplements, and have been demonstrated to exhibit a significant number of health benefits in rodents and humans. However, the cause for the hexavalent chromium to induce cytotoxicity is not entirely understood. A series of in vitro and in vivo studies have demonstrated that chromium (VI) induces an oxidative stress through enhanced production of reactive oxygen species (ROS) leading to genomic DNA damage and oxidative deterioration of lipids and proteins. A cascade of cellular events occur following chromium (VI)-induced oxidative stress including enhanced production of superoxide anion and hydroxyl radicals, increased lipid peroxidation and genomic DNA fragmentation, modulation of intracellular oxidized states, activation of protein kinase C, apoptotic cell death and altered gene expression. In this paper, we have demonstrated concentration- and time-dependent effects of sodium dichromate (chromium (VI) or Cr (VI)) on enhanced production of superoxide anion and hydroxyl radicals, changes in intracellular oxidized states as determined by laser scanning confocal microscopy, DNA fragmentation and apoptotic cell death (by flow cytometry) in human peripheral blood mononuclear cells. These results were compared with the concentration-dependent effects of chromium (VI) on chronic myelogenous leukemic K562 cells and J774A.1 murine macrophage cells. Chromium (VI)-induced enhanced production of ROS, as well as oxidative tissue and DNA damage were observed in these cells. More pronounced effect was observed on chronic myelogenous leukemic K562 cells and J774A.1 murine macrophage cells. Furthermore, we have assessed the effect of a

  20. Techniques for Achieving Zero Stress in Thin Films of Iridium, Chromium, and Nickel

    NASA Technical Reports Server (NTRS)

    Broadway, David M.; O'Dell, Stephen L.; Ramsey, Brian D.; Weimer, Jeffrey

    2015-01-01

    We examine techniques for achieving zero intrinsic stress in thin films of iridium, chromium, and nickel deposited by magnetron sputter deposition. The intrinsic stress is further correlated to the microstructural features and physical properties such as surface roughness and optical density at a scale appropriate to soft X-ray wavelengths. The examination of the stress in these materials is motivated by efforts to advance the optical performance of light-weight X-ray space telescopes into the regime of sub-arcsecond resolution through various deposition techniques that rely on control of the film stress to values within 10-100 MPa. A characteristic feature of the intrinsic stress behavior in chromium and nickel is their sensitivity to the magnitude and sign of the intrinsic stress with argon gas pressure and deposition rate, including the existence of a critical argon process pressure that results in zero film stress which scales linearly with the atomic mass of the sputtered species. While the effect of stress reversal with argon pressure has been previously reported by Hoffman and others for nickel and chromium, we report this effect for iridium. In addition to stress reversal, we identify zero stress in the optical functioning iridium layer shortly after island coalescence for low process pressures at a film thickness of approximately 35nm. The measurement of the low values of stress during deposition was achieved with the aid of a sensitive in-situ instrument capable of a minimum detectable level of stress, assuming a 35nm thick film, in the range of 0.40-6.0 MPa for <111> oriented crystalline silicon substrate thicknesses of 70-280 microns, respectively.

  1. Changes in oxidation state of chromium during LDEF exposure

    NASA Technical Reports Server (NTRS)

    Golden, Johnny L.

    1992-01-01

    The solar collector used for the McDonnell-Douglas Cascade Variable Heat Pipe, Experiment A0076 (Michael Grote - Principal Investigator) was finished with black chromium plating as a thermal control coating. The coating is metallic for low emittance, and is finely microcrystalline to a dimension which yields its high absorptivity. An underplate of nickel was applied to the aluminum absorber plate in order to achieve optimal absorptance characteristics from the black chromium plate surface. Experiment A0076 was located at tray position F9, receiving a projected 8.7 x 10 exp 21 atomic oxygen atoms/sq cm and 11,200 ESH solar radiation. During retrieval, it was observed that the aluminized kapton thermal blankets covering most of the tray were severely eroded by atomic oxygen, and that a 'flap' of aluminum foil was overlaying a roughly triangular shaped portion of the absorber panel. The aluminum foil 'flap' was lost sometime between the Long Duration Exposure Facility (LDEF) retrieval and deintegration. At deintegration, the black chromium was observed to have discolored where it had been covered by the foil 'flap'. A summary of the investigation into the cause of the discoloration is presented.

  2. 21 CFR 73.3110a - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2013 CFR

    2013-04-01

    ... 21 Food and Drugs 1 2013-04-01 2013-04-01 false Chromium-cobalt-aluminum oxide. 73.3110a Section 73.3110a Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL... required to accomplish the intended coloring effect. (2) Authorization for this use shall not be...

  3. 21 CFR 73.3110a - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2012 CFR

    2012-04-01

    ... 21 Food and Drugs 1 2012-04-01 2012-04-01 false Chromium-cobalt-aluminum oxide. 73.3110a Section 73.3110a Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL... required to accomplish the intended coloring effect. (2) Authorization for this use shall not be...

  4. Thermogravimetric study of the reduction of oxides of nickel and chromium

    NASA Technical Reports Server (NTRS)

    Herbell, T. P.

    1973-01-01

    The controlled hydrogen, carbon, and hydrogen-carbon reductions of the oxides of nickel and chromium were evaluated by thermogravimetric means. The materials studied were nickel (nickelous) oxide (NiO) and chromic sesquioxide (Cr2O3), mixed NiO-Cr2O3, and oxidized nickel - 20-percent chromium (Ni-20Cr). NiO was effectively reduced by all three atmospheres, Cr2O3 only by hydrogen-carbon, NiO-Cr2O3 by hydrogen and hydrogen-carbon, and oxidized Ni-20Cr by hydrogen and hydrogen-carbon and to a considerable extent by carbon alone. The results suggest that the presence of nickel promotes the reduction of Cr2O3. However, no definite explanation could be reached for the effectiveness of the hydrogen-carbon reduction of Cr2O3.

  5. Methylene blue photocatalytic mineralization under visible irradiation on TiO2 thin films doped with chromium

    NASA Astrophysics Data System (ADS)

    Diaz-Uribe, Carlos; Vallejo, William; Ramos, Wilkendry

    2014-11-01

    We studied changes in structural, optical and photocatalytic properties of TiO2 thin films due to doping process with chromium. Powders of undoped TiO2 and chromium-doped TiO2 (Cr:TiO2) were synthesized by sol-gel method and, thin films were deposited by doctor blade method. The properties of the thin films were studied by X-ray diffraction (XRD), infrared spectroscopy (IR) and diffuse reflectance. The XRD patterns indicated that doping process changed the crystalline phases radio of TiO2 thin films, furthermore, the optical analysis showed that band gap value of Cr:TiO2 thin films was 31% fewer than undoped TiO2 thin films. Along, Langmuir-Hinshelwood model was used to obtain kinetic information of the photo-mineralization process; results indicated that photocatalytic activity of Cr:TiO2 thin films were four times better than undoped TiO2 thin films; finally the synergic effect was tested by addition of the H2O2, photocatalytic yield was improved from 26% to 61% when methylene blue photo-mineralization was assisted with slightly amount of H2O2.

  6. CHROMIUM ELECTROANALYSIS AT SCREEN PRINTED ELECTRODE MODIFIED BY THIN FILMS OF NICKEL

    EPA Science Inventory

    A rapid and potentially cost-effective electrochemical method is reported for analysis of chromium (VI) and Chromium(III) using a nickel modified screen printed carbon ink electrode. Electrochemical characteristics of nickel modified electrode as well voltammetric behavior f...

  7. Chromium III histidinate exposure modulates antioxidant gene expression in HaCaT human keratinocytes exposed to oxidative stress

    Technology Transfer Automated Retrieval System (TEKTRAN)

    While the toxicity of hexavalent chromium is well established, trivalent Cr (Cr(III)) is an essential nutrient involved in insulin and glucose homeostasis. Recently, antioxidant effects of chromium (III) histidinate (Cr(III)His) were reported in HaCaT human keratinocytes exposed to oxidative stress...

  8. Neointimal hyperplasia in a thin-strut cobalt-chromium stent: insights from detailed 3-D intravascular ultrasound analysis.

    PubMed

    Otake, Hiromasa; Ako, Junya; Waseda, Katsuhisa; Sakurai, Ryota; Hirohata, Atsushi; Kaneda, Hideaki; Hasegawa, Takao; Honda, Yasuhiro; Fitzgerald, Peter J

    2010-11-05

    The effect of current generation cobalt-chromium stents on neointimal proliferation has not been fully elucidated. IVUS images of 137 patients treated with a single thin-strut cobalt-chromium stent (Driver: DRI, n=74) or stainless steel stent (Multilink plus: ML, n=63) were selected. Although % neointima volume (neointimal volume divided by stent volume) were comparable, DRI showed significantly smaller maximum %cross-sectional narrowing (%CSN: neointimal area divided by stent area) (P=0.006) with significantly less %CSN>60 (percent stent length with %CSN>60%) than ML (P=0.04). In conclusion, the amount of neointimal hyperplasia after DRI implantation was comparable to that after ML. However, current generation cobalt-chromium DRI may show less and shorter severe narrowing than the stainless steel ML.

  9. Manganese and chromium doping in atomically thin MoS2

    NASA Astrophysics Data System (ADS)

    Huang, Ce; Jin, Yibo; Wang, Weiyi; Tang, Lei; Song, Chaoyu; Xiu, Faxian

    2017-03-01

    Recently, two-dimensional materials have been attracting increasing attention because of their novel properties and promising applications. However, the impurity doping remains a significant challenge owing to the lack of the doping strategy in the atomically thin layers. Here we report on the chromium (Cr) and manganese (Mn) doping in atomically-thin {{{MoS}}}{{2}} crystals grown by chemical vapor deposition. The Cr/Mn doped {{{MoS}}}{{2}} samples are characterized by a peak at 1.76 and 1.79 eV in photoluminescence spectra, respectively, compared with the undoped one at 1.85 eV. The field-effect transistor (FET) devices based on the Mn doping show a higher threshold voltage than that of the pure {{{MoS}}}{{2}} while the Cr doping exhibits the opposite behavior. Importantly, the carrier concentration in these samples displays a remarkable difference arising from the doping effect, consistent with the evolution of the FET performance. The temperature-dependent conductivity measurements further demonstrate a large variation in activation energy. The successful incorporation of the Mn and Cr impurities into the monolayer {{{MoS}}}{{2}} paves the way towards the high Curie temperature two-dimensional dilute magnetic semiconductors. Project supported by the National Young 1000 Talent Plan, the Pujiang Talent Plan in Shanghai, the National Natural Science Foundation of China (Nos. 61322407, 11474058, 61674040), and the Chinese National Science Fund for Talent Training in Basic Science (No. J1103204).

  10. The effect of temperature on chromium vaporization and oxide scale growth on interconnect steels for Solid Oxide Fuel Cells

    NASA Astrophysics Data System (ADS)

    Falk-Windisch, Hannes; Svensson, Jan Erik; Froitzheim, Jan

    2015-08-01

    Chromium vaporization and oxide scale growth are probably the two most important degradation mechanisms associated with the interconnect in Solid Oxide Fuel Cells (SOFCs) when Cr2O3-forming alloys are used as the interconnect material. This study examines the influence of temperature on both mechanisms. Two commercially available steels; Crofer 22 H and Sanergy HT, were isothermally exposed at 650, 750 and 850 °C in an air-3% H2O atmosphere with a high flow rate. Volatile chromium species were collected using the denuder technique. The microstructure of thermally grown oxide scales was characterized using Scanning Electron Microscopy (SEM), Energy Dispersive X-Ray Analysis (EDX) and X-Ray Diffraction (XRD). The findings of this study show that although Cr evaporation is reduced with lower temperature, its relative importance compared to oxide scale growth is greater.

  11. Hydrogen peroxide effects on chromium oxidation state and solubility in four diverse, chromium-enriched soils.

    PubMed

    Rock, M L; James, B R; Helz, G R

    2001-10-15

    High concentrations of H2O2 are being tested for in situ oxidation and remediation of buried organic contaminants in soils and groundwater. Peroxide is being considered as a direct chemical oxidant in Fenton-type reactions or as a source of oxidizing equivalents in bioremediation schemes. How H2O2 affects the oxidation state and solubility of Cr(III) and Cr(VI), common co-contaminants with organic chemicals, is explored here in four chemically diverse soils containing elevated levels of Cr. Soil contaminated with soluble Cr(VI) from chromite ore processing residue and soil containing high levels of recently reduced Cr (III) from electroplating waste both released dissolved Cr(VI) after single applications of up to 24 mM H2O2. In no case was there evidence that H202 reduced preexisting Cr(VI) to Cr(III), even though this would be allowed thermodynamically. Chromate in the leachates exceeded the U.S. EPA drinking water standard for total dissolved Cr (2 microM) by a factor of 10-1000. Anaerobic conditions in an organic-rich, tannery waste-contaminated soil protected Cr(III) from oxidation and mobilization. Mineral forms of Cr in serpentinitic soil near a former chromite mine also resisted oxidation on the time scale of days. Mobilization of Cr(VI) could be a hazardous consequence of using H2O2 for in situ remediation of chemically complex wastes, but H2O2 could prove attractive for ex situ treatment (i.e., soil washing). This paper demonstrates marked differences among Cr-contaminated soils in their capacity to release Cr(VI) upon chemical treatment with H2O2.

  12. Reproductive toxicity of chromium in adult bonnet monkeys (Macaca radiata Geoffrey). Reversible oxidative stress in the semen

    SciTech Connect

    Subramanian, Senthivinayagam . E-mail: subbi100@yahoo.co.uk; Rajendiran, Gopalakrishnan; Sekhar, Pasupathi; Gowri, Chandrahasan; Govindarajulu, Pera; Aruldhas, Mariajoseph Michael

    2006-09-15

    The present study was designed to test the hypothesis that oxidative stress mediates chromium-induced reproductive toxicity. Monthly semen samples were collected from adult monkeys (Macaca radiata), which were exposed to varying doses (50, 100, 200 and 400 ppm) of chromium (as potassium dichromate) for 6 months through drinking water. Chromium treatment decreased sperm count, sperm forward motility and the specific activities of antioxidant enzymes, superoxide dismutase and catalase, and the concentration of reduced glutathione in both seminal plasma and sperm in a dose- and duration-dependent manner. On the other hand, the quantum of hydrogen peroxide in the seminal plasma/sperm from monkeys exposed to chromium increased with increasing dose and duration of chromium exposure. All these changes were reversed after 6 months of chromium-free exposure period. Simultaneous supplementation of vitamin C (0.5 g/L; 1.0 g/L; 2.0 g/L) prevented the development of chromium-induced oxidative stress. Data support the hypothesis and show that chronic chromium exposure induces a reversible oxidative stress in the seminal plasma and sperm by creating an imbalance between reactive oxygen species and antioxidant system, leading to sperm death and reduced motility of live sperm.

  13. Flexible high power-per-weight perovskite solar cells with chromium oxide-metal contacts for improved stability in air

    NASA Astrophysics Data System (ADS)

    Kaltenbrunner, Martin; Adam, Getachew; Głowacki, Eric Daniel; Drack, Michael; Schwödiauer, Reinhard; Leonat, Lucia; Apaydin, Dogukan Hazar; Groiss, Heiko; Scharber, Markus Clark; White, Matthew Schuette; Sariciftci, Niyazi Serdar; Bauer, Siegfried

    2015-10-01

    Photovoltaic technology requires light-absorbing materials that are highly efficient, lightweight, low cost and stable during operation. Organolead halide perovskites constitute a highly promising class of materials, but suffer limited stability under ambient conditions without heavy and costly encapsulation. Here, we report ultrathin (3 μm), highly flexible perovskite solar cells with stabilized 12% efficiency and a power-per-weight as high as 23 W g-1. To facilitate air-stable operation, we introduce a chromium oxide-chromium interlayer that effectively protects the metal top contacts from reactions with the perovskite. The use of a transparent polymer electrode treated with dimethylsulphoxide as the bottom layer allows the deposition--from solution at low temperature--of pinhole-free perovskite films at high yield on arbitrary substrates, including thin plastic foils. These ultra-lightweight solar cells are successfully used to power aviation models. Potential future applications include unmanned aerial vehicles--from airplanes to quadcopters and weather balloons--for environmental and industrial monitoring, rescue and emergency response, and tactical security applications.

  14. Flexible high power-per-weight perovskite solar cells with chromium oxide-metal contacts for improved stability in air.

    PubMed

    Kaltenbrunner, Martin; Adam, Getachew; Głowacki, Eric Daniel; Drack, Michael; Schwödiauer, Reinhard; Leonat, Lucia; Apaydin, Dogukan Hazar; Groiss, Heiko; Scharber, Markus Clark; White, Matthew Schuette; Sariciftci, Niyazi Serdar; Bauer, Siegfried

    2015-10-01

    Photovoltaic technology requires light-absorbing materials that are highly efficient, lightweight, low cost and stable during operation. Organolead halide perovskites constitute a highly promising class of materials, but suffer limited stability under ambient conditions without heavy and costly encapsulation. Here, we report ultrathin (3 μm), highly flexible perovskite solar cells with stabilized 12% efficiency and a power-per-weight as high as 23 W g(-1). To facilitate air-stable operation, we introduce a chromium oxide-chromium interlayer that effectively protects the metal top contacts from reactions with the perovskite. The use of a transparent polymer electrode treated with dimethylsulphoxide as the bottom layer allows the deposition-from solution at low temperature-of pinhole-free perovskite films at high yield on arbitrary substrates, including thin plastic foils. These ultra-lightweight solar cells are successfully used to power aviation models. Potential future applications include unmanned aerial vehicles-from airplanes to quadcopters and weather balloons-for environmental and industrial monitoring, rescue and emergency response, and tactical security applications.

  15. Enhanced sludge processing of HLW: Hydrothermal oxidation of chromium, technetium, and complexants by nitrate. 1997 mid-year progress report

    SciTech Connect

    Buelow, S.

    1997-06-01

    'Treatment of High Level Waste (HLW) is the second most costly problem identified by OEM. In order to minimize costs of disposal, the volume of HLW requiring vitrification and long term storage must be reduced. Methods for efficient separation of chromium from waste sludges, such as the Hanford Tank Wastes (HTW), are key to achieving this goal since the allowed level of chromium in high level glass controls waste loading. At concentrations above 0.5 to 1.0 wt.% chromium prevents proper vitrification of the waste. Chromium in sludges most likely exists as extremely insoluble oxides and minerals, with chromium in the plus III oxidation state [1]. In order to solubilize and separate it from other sludge components, Cr(III) must be oxidized to the more soluble Cr(VI) state. Efficient separation of chromium from HLW could produce an estimated savings of $3.4B[2]. Additionally, the efficient separation of technetium [3], TRU, and other metals may require the reformulation of solids to free trapped species as well as the destruction of organic complexants. New chemical processes are needed to separate chromium and other metals from tank wastes. Ideally they should not utilize additional reagents which would increase waste volume or require subsequent removal. The goal of this project is to apply hydrothermal processing for enhanced chromium separation from HLW sludges. Initially, the authors seek to develop a fundamental understanding of chromium speciation, oxidation/reduction and dissolution kinetics, reaction mechanisms, and transport properties under hydrothermal conditions in both simple and complex salt solutions. The authors also wish to evaluate the potential of hydrothermal processing for enhanced separations of technetium and TRU by examining technetium and TRU speciation at hydrothermal conditions optimal for chromium dissolution.'

  16. Challenges in Developing Oxidation-Resistant Chromium-Based Alloys for Applications Above 900°C

    NASA Astrophysics Data System (ADS)

    Dorcheh, Ali S.; Galetz, Mathias C.

    2016-11-01

    Chromium-based alloys are potential candidates for high-temperature structural applications. This article reviews the challenges of chromium and Cr-alloys used at temperatures higher than 900°C with the focus on their oxidation behavior. First, latest findings on the key environmental factors affecting the oxidation resistance such as volatilization and the impact of nitrogen in air are summarized. Oxidation resistance is addressed with regards to the effects of major alloying elements and reactive elements as well as its correlation with microstructure in multi-phase alloys. Secondly, the existing challenges to develop chromium alloys with enhanced high-temperature oxidation resistance are discussed. It is shown that volatilization and nitridation, the two major obstacles for the use of chromium alloys in air, can be significantly improved by alloy design.

  17. Evaluation of the chromium oxide arc spraying treatment on solar energy collectors

    NASA Astrophysics Data System (ADS)

    Fernandezarroyo, Gloria; Gonzalezgarcia-Conde, Antonio; Moralespoyato, Francisco; Arrerajaraiz, Jose Maria; Blancotemprano, Cristina; Camonalvarez, Francisco

    Accelerated aging tests were performed on steel specimens coated with plasma gun Cr2O3 arc sprays. The chromium oxide coating is attractive due to its radiation absorptance characteristic, especially for solar thermal energy absorption applications. The use of plasma blowpipes gives low porosity coatings. Collector efficiency curves were determined and compared to the curves of conventional black paint collectors. The efficiency is close to conventional painting. The excellent behavior at high temperatures makes this treatment applicable to concentrated radiation absorbers.

  18. Effect Of Oxidation On Chromium Leaching And Redox Capacity Of Slag-Containing Waste Forms

    SciTech Connect

    Almond, P. M.; Stefanko, D. B.; Langton, C. A.

    2013-03-01

    The rate of oxidation is important to the long-term performance of reducing salt waste forms because the solubility of some contaminants, e.g., technetium, is a function of oxidation state. TcO4- in the salt solution is reduced to Tc(IV) and has been shown to react with ingredients in the waste form to precipitate low solubility sulfide and/or oxide phases [Shuh, et al., 1994, Shuh, et al., 2000, Shuh, et al., 2003]. Upon exposure to oxygen, the compounds containing Tc(IV) oxidize to the pertechnetate ion, Tc(VII)O4-, which is very soluble. Consequently the rate of technetium oxidation front advancement into a monolith and the technetium leaching profile as a function of depth from an exposed surface are important to waste form performance and ground water concentration predictions. An approach for measuring contaminant oxidation rate (effective contaminant specific oxidation rate) based on leaching of select contaminants of concern is described in this report. In addition, the relationship between reduction capacity and contaminant oxidation is addressed. Chromate was used as a non-radioactive surrogate for pertechnetate in simulated waste form samples. Depth discrete subsamples were cut from material exposed to Savannah River Site (SRS) field cured conditions. The subsamples were prepared and analyzed for both reduction capacity and chromium leachability. Results from field-cured samples indicate that the depth at which leachable chromium was detected advanced further into the sample exposed for 302 days compared to the sample exposed to air for 118 days (at least 50 mm compared to at least 20 mm). Data for only two exposure time intervals is currently available. Data for additional exposure times are required to develop an equation for the oxidation front progression. Reduction capacity measurements (per the Angus-Glasser method, which is a measurement of the ability of a material to chemically reduce Ce(IV) to Ce

  19. Chromium VI administration induces oxidative stress in hypothalamus and anterior pituitary gland from male rats.

    PubMed

    Nudler, Silvana I; Quinteros, Fernanda A; Miler, Eliana A; Cabilla, Jimena P; Ronchetti, Sonia A; Duvilanski, Beatriz H

    2009-03-28

    Hexavalent chromium (Cr VI)-containing compounds are known carcinogens which are present in industrial settings and in the environment. The major route of chromium exposure for the general population is oral intake. Previously we have observed that Cr VI affects anterior pituitary secretion and causes oxidative stress in vitro. The aim of the present work was to investigate if in vivo Cr VI treatment (100 ppm of Cr VI in drinking water for up 30 days) causes oxidative stress in hypothalamus and anterior pituitary gland from male rats. This treatment produced a 4-fold increase of chromium content in hypothalamus and 10-fold increase in anterior pituitary gland. Lipid peroxidation showed a significant increase in hypothalamus and anterior pituitary. Cr VI augmented superoxide dismutase activity in anterior pituitary gland and glutathione reductase activity in hypothalamus, but glutathione peroxidase and catalase activities remained unchanged in both tissues. Heme oxygenase-1 mRNA expression significantly rose in both tissues. Metallothionein 1 mRNA content increased in anterior pituitary and metallothionein 3 mRNA increased in hypothalamus. These results show, for the first time, that oral chronic administration of Cr VI produces oxidative stress on the hypothalamus and anterior pituitary gland which may affect normal endocrine function.

  20. Thin-Film Solid Oxide Fuel Cells

    NASA Technical Reports Server (NTRS)

    Chen, Xin; Wu, Nai-Juan; Ignatiev, Alex

    2009-01-01

    The development of thin-film solid oxide fuel cells (TFSOFCs) and a method of fabricating them have progressed to the prototype stage. This can result in the reduction of mass, volume, and the cost of materials for a given power level.

  1. 21 CFR 73.1015 - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2011 CFR

    2011-04-01

    ... oxide may be safely used for coloring linear polyethylene surgical sutures, United States Pharmacopeia... procedure, the color additive is blended with the polyethylene resin. The mixture is heated to a...

  2. 21 CFR 73.1015 - Chromium-cobalt-aluminum oxide.

    Code of Federal Regulations, 2010 CFR

    2010-04-01

    ... oxide may be safely used for coloring linear polyethylene surgical sutures, United States Pharmacopeia... procedure, the color additive is blended with the polyethylene resin. The mixture is heated to a...

  3. Determination of carbon by the oxidation reduction reaction with chromium

    NASA Technical Reports Server (NTRS)

    Mashkovich, L.; Kuteynikov, A. F.

    1978-01-01

    Free carbon was determined in silicon and boron carbides in ash, oxides, and other materials by oxidation to carbon dioxide with a mixture of K2Cr2O7 + H2SO4. The determination was made from the amount of CR(6) consumed, by adding excess Mohr's salt and titrating with a standard solution of KMnO4. The amount of Cr(6) self reduced was determined in a blank test. Optimum oxidation and conditions were achieved when the volumes of 5% k2Cr2Oz and H2SO4 were equal. The mixture was boiled for 1-2 hours using a reflex condenser. The volume should not be reduced, in order to avoid an increase in the sulfuric acid concentration. The relative error was 4-7% for 0.005-0.04 g C and less than or equal to 3.5% for 0.1 g C.

  4. Enhanced oxidative vaporization of Cr2O3 and chromium by oxygen atoms

    NASA Technical Reports Server (NTRS)

    Fryburg, G. C.; Kohl, F. J.; Stearns, C. A.

    1974-01-01

    Rates of oxidative vaporization of Cr2O3 have been found to be markedly enhanced in the presence of oxygen atoms. Investigations were conducted over the temperature range 200-1250 C. For Cr2O3 the enhancement was about 10 to the 9th power at 550 C in oxygen containing 2.5% atoms. Rapid oxidative vaporization of bare chromium was observed below 800 C, the rate being about one-half that of Cr2O3. Results are interpreted in terms of thermochemical analysis.

  5. Pore Scale Modeling of the Reactive Transport of Chromium in the Cathode of a Solid Oxide Fuel Cell

    SciTech Connect

    Ryan, Emily M.; Tartakovsky, Alexandre M.; Recknagle, Kurtis P.; Khaleel, Mohammad A.; Amon, Cristina

    2011-01-01

    We present a pore scale model of a solid oxide fuel cell (SOFC) cathode. Volatile chromium species are known to migrate from the current collector of the SOFC into the cathode where over time they decrease the voltage output of the fuel cell. A pore scale model is used to investigate the reactive transport of chromium species in the cathode and to study the driving forces of chromium poisoning. A multi-scale modeling approach is proposed which uses a cell level model of the cathode, air channel and current collector to determine the boundary conditions for a pore scale model of a section of the cathode. The pore scale model uses a discrete representation of the cathode to explicitly model the surface reactions of oxygen and chromium with a cathode material. The pore scale model is used to study the reaction mechanisms of chromium by considering the effects of reaction rates, diffusion coefficients, chromium vaporization, and oxygen consumption on chromium’s deposition in the cathode. The study shows that chromium poisoning is most significantly affected by the chromium reaction rates in the cathode and that the reaction rates are a function of the local current density in the cathode.

  6. Preparation and Characterization of Chitosan Thin Films on Mixed-Matrix Membranes for Complete Removal of Chromium

    PubMed Central

    Nayak, Vignesh; Jyothi, Mannekote Shivanna; Balakrishna, R Geetha; Padaki, Mahesh; Ismail, Ahmad Fauzi

    2015-01-01

    Herein we present a new approach for the complete removal of CrVI species, through reduction of CrVI to CrIII, followed by adsorption of CrIII. Reduction of chromium from water is an important challenge, as CrIV is one of the most toxic substances emitted from industrial processes. Chitosan (CS) thin films were developed on plain polysulfone (PSf) and PSf/TiO2 membrane substrates by a temperature-induced technique using polyvinyl alcohol as a binder. Structure property elucidation was carried out by X-ray diffraction, microscopy, spectroscopy, contact angle measurement, and water uptake studies. The increase in hydrophilicity followed the order: PSf < PSf/TiO2 < PSf/TiO2/CS membranes. Use of this thin-film composite membrane for chromium removal was investigated with regards to the effects of light and pH. The observations reveal 100 % reduction of CrVI to CrIII through electrons and protons donated from OH and NH2 groups of the CS layer; the reduced CrIII species are adsorbed onto the CS layer via complexation to give chromium-free water. PMID:26246989

  7. Process for making a titanium diboride-chromium diboride-yttrium titanium oxide ceramic composition

    DOEpatents

    Holcombe, Cressie E.; Dykes, Norman L.

    1992-01-01

    A ceramic composition composition is described. The ceramic composition consists essentially of from about 84 to 96 w/o titanium diboride, from about 1 to 9 w/o chromium diboride, and from about 3 to aobut 15 w/o yttrium-titanium-oxide. A method of making the ceramic composition is also described. The method of making the ceramic composition comprises the following steps: Step 1--A consolidated body containing stoichiometric quantities of titanium diboride and chromium diboride is provided. Step 2--The consolidated body is enclosed in and in contact with a thermally insulated package of yttria granules having a thickness of at least 0.5 inches. Step 3--The consolidated body enclosed in the thermally insulated package of yttria granules is heated in a microwave oven with microwave energy to a temperature equal to or greater than 1,900 degrees centigrade to sinter and uniformly disperse yttria particles having a size range from about 1 to about 12 microns throughout the consolidated body forming a densified body consisting essentially of titanium diboride, chromium diboride, and yttrium-titanium-oxide. The resulting densified body has enhanced fracture toughness and hardness.

  8. Process for making a titanium diboride-chromium diboride-yttrium titanium oxide ceramic composition

    DOEpatents

    Holcombe, C.E.; Dykes, N.L.

    1992-04-28

    A ceramic composition is described. The ceramic composition consists essentially of from about 84 to 96 w/o titanium diboride, from about 1 to 9 w/o chromium diboride, and from about 3 to about 15 w/o yttrium-titanium-oxide. A method of making the ceramic composition is also described. The method of making the ceramic composition comprises the following steps: Step 1--A consolidated body containing stoichiometric quantities of titanium diboride and chromium diboride is provided. Step 2--The consolidated body is enclosed in and in contact with a thermally insulated package of yttria granules having a thickness of at least 0.5 inches. Step 3--The consolidated body enclosed in the thermally insulated package of yttria granules is heated in a microwave oven with microwave energy to a temperature equal to or greater than 1,900 degrees centigrade to sinter and uniformly disperse yttria particles having a size range from about 1 to about 12 microns throughout the consolidated body forming a densified body consisting essentially of titanium diboride, chromium diboride, and yttrium-titanium-oxide. The resulting densified body has enhanced fracture toughness and hardness. No Drawings

  9. Microstructure and response studies of chromium titanium oxide gas-sensitive resistors

    NASA Astrophysics Data System (ADS)

    Shukri, Khalid

    The aim of this project was to investigate the effects of microstructure and composition on the response of gas sensitive resistors fabricated from chromium titanium oxide powders. The methods of preparation were varied in order to vary the microstructure in the resulting devices. The chromium oxide starting material was obtained both by decomposition of ammonium dichromate, and by colloidal precipitation. Titanium dioxide was obtained by colloidal precipitation. Mixing both with and without the addition of surfactants was explored. Several compositions were prepared in each method and sintered at various firing temperatures. Changing the composition by varying the titanium content had a small effect on the response, which increased slightly as the titanium content was increased. Changing the microstructure by altering the preparation method or increasing the sintering time had a more prominent effect on the response, the response decreasing as the structure became more agglomerated and increasing to some of the test gases when the small grains were grown through prolonged sintering times. Agglomeration and grain-growth in the printed layers dominated the behaviour of the devices prepared from the powders. It was discovered that certain bonding agents used in printing the gold electrodes migrated into the oxide layer during the process of firing the oxide onto the substrate. The concentration of these fluxes was dependent on the preparation temperature of the sensors, and as this increased both the response of the sensor and its variation with depth within the porous oxide layer were affected.

  10. Oxidation behavior of nickel-chromium-aluminum-yttrium - Magnesium oxide and nickel-chromium-aluminum-yttrium - zirconate type of cermets

    NASA Technical Reports Server (NTRS)

    Zaplatynsky, I.

    1976-01-01

    The 1100 and 1200 C cyclic oxidation resistance of dense Ni-Cr-Al-Y - MgO, Ni-Cr-Al-Y - CaZrO3, Ni-Cr-Al-Y - SrZrO3, Ni-Cr-Al-Y - MgZro3 cermets and a 70 percent dense Ni-Cr-Al-Y developmental material was determined. The cermets contained 60 and 50 volume percent of Ni-Cr-Al-Y which formed a matrix with the oxide particles imbedded in it. The cermets containing MgO were superior to cermets based on zirconates and to the porous Ni-Cr-Al-Y material.

  11. Copper Zinc Cobalt Aluminium Chromium Hydroxycarbonates and Mixed Oxides

    NASA Astrophysics Data System (ADS)

    Morpurgo, Simone; Jacono, Mariano Lo; Porta, Piero

    1996-03-01

    Hydroxycarbonate precursors with different Cu/Zn/Co/Al/Cr atomic ratios were prepared by coprecipitation of the metal nitrates with a stoichiometric amount of NaHCO3under controlled conditions of temperature, stirring, and pH. Cu-Zn-Co-Al-Cr mixed oxides were obtained by decomposition of the precursors at different temperatures (623, 723, and 973 K in air). The characterization has been performed by X-ray powder diffraction (XRPD), diffuse reflectance spectroscopy in the UV-VIS-NIR region (DRS), thermal analysis (TGA/DTA), BET surface area determination, and measurements of magnetic susceptibility. The XRPD patterns show that the precursors are quasi-amorphous layered double hydroxides (LDHs or hydrotalcite-like materials with the general stoichiometric formula:MII6MIII2(OH)16CO3· 4H2O, whereMII= Cu, Zn, Co andMIII= Al, Cr) containing a variable amount of Cu2(OH)2CO3(malachite). The thermal decomposition of the precursors occurred through complete dehydration of the sample (up toT= 573 K) and further release of CO2(up toT= 773 K). The decomposition of Cu2(OH)2CO3occurred in a single step at about 653 K. The mixed oxides obtained by calcination of the precursors at 623 K were poorly crystalline materials. Crystalline oxide mixtures containing CuO, ZnO, and spinels as ZnCr2O4, ZnCo2O4, ZnAl2O4, and Co3O4in a solid solution were formed only at 973 K, after complete release of CO2.

  12. Oxidative Stress and DNA Damage Induced by Chromium in Liver and Kidney of Goldfish, Carassius auratus

    PubMed Central

    Velma, Venkatramreddy; Tchounwou, Paul B.

    2013-01-01

    Chromium (Cr) is an abundant element in the Earth’s crust. It exhibits various oxidation states, from divalent to hexavalent forms. Cr has diverse applications in various industrial processes and inadequate treatment of the industrial effluents leads to the contamination of the surrounding water resources. Hexavalent chromium (Cr (VI)) is the most toxic form, and its toxicity has been associated with oxidative stress. The present study was designed to investigate the toxic potential of Cr (VI) in fish. In this research, we investigated the role of oxidative stress in chromium-induced genotoxicity in the liver and kidney cells of goldfish, Carassius auratus. Goldfish were acclimatized to the laboratory conditions and exposed them to 5% and 10% of 96 hr-LC50 (85.7 mg/L) of aqueous Cr (VI) in a continuous flow through system. Fish were sampled every 7 days for a period of 28 days to analyze the lipid hydroperoxides (LHP) levels and genotoxic potentials in the liver and kidney. LHP levels were analyzed by spectrophotometry while genotoxicity was assessed by single cell gel electrophoresis (comet) assay. LHP levels in the liver increased significantly at week 1, followed by a decrease. LHP levels in the kidney increased significantly at weeks 1, 2, and 3, and decreased at week 4 compared to the control. The percentage of DNA damage increased in both liver and kidney at both test concentrations. The results clearly indicate that Cr (VI) induces significant levels of DNA damage in liver and kidney cells of goldfish. The induced LHP levels in both organs were concentration-dependent and were directly correlated with the levels of DNA damage. The two tested Cr (VI) concentrations induced significant levels of oxidative stress in both organs, however the kidney appears to be more vulnerable and sensitive to Cr-induced toxicity than the liver. PMID:23700361

  13. Effect of chromium oxide as active site over TiO2-PILC for selective catalytic oxidation of NO.

    PubMed

    Zhang, Jingxin; Zhang, Shule; Cai, Wei; Zhong, Qin

    2013-12-01

    This study introduced TiO2-pillared clays (TiO2-PILC) as a support for the catalytic oxidation of NO and analyzed the performance of chromium oxides as the active site of the oxidation process. Cr-based catalysts were prepared by a wet impregnation method. It was found that the 10 wt.% chromium doping on the support achieved the best catalytic activity. At 350 degrees C, the NO conversion was 61% under conditions of GHSV = 23600 hr(-1). The BET data showed that the support particles had a mesoporous structure. H2-TPR showed that Cr(10)TiP (10 wt.% Cr doping on TiO2-PILC) clearly exhibited a smooth single peak. EPR and XPS were used to elucidate the oxidation process. During the NO + O2 adsorption, the intensity of evolution of superoxide ions (O2(-)) increased. The content of Cr3+ on the surface of the used catalyst was 40.37%, but when the used catalyst continued adsorbing NO, the Cr3+ increased to 50.28%. Additionally, O(alpha)/O(beta) increased markedly through the oxidation process. The NO conversion decreased when SO2 was added into the system, but when the SO2 was removed, the catalytic activity recovered almost up to the initial level. FT-IR spectra did not show a distinct characteristic peak of SO4(2-).

  14. Reduction of chromium oxides in stainless steel dust

    NASA Astrophysics Data System (ADS)

    Zhang, Yan-ling; Guo, Wen-ming; Jia, Xin-lei

    2015-06-01

    The recovery of metal oxides from stainless steel dust using C (graphite), SiFe, and Al as reductants was investigated under various conditions. The apparent distribution ratio of Cr ( L'{Cr/m/s}) in the recovered metal and residual slag phases was defined as the major performance metric. The results show that the recovery ratio of metals increases as the ratio of CaO:SiO2 by mass in the residual slag increases to 1.17. The residual content of metals in the slag decreases as the Al2O3 content of the slag is increased from approximately 8wt% to 10wt%. The recovery ratio of Cr increases with increasing L'{Cr/m/s}, and a linear relationship between L'{Cr/m/s} and the activity coefficient ratio of CrO in the slag and the recovered metal phase is observed. The combination of C and SiFe or Al as the reducing agents reveals that Si is the more effective coreductant.

  15. Nitrogen Impurity Gettering in Oxide Dispersion Ductilized Chromium

    SciTech Connect

    Brady, Michael P; Anderson, Ian M; Weaver, Mark; Meyer III, Harry M; Walker, Larry R; Miller, Michael K; Larson, David James; Wright, Ian G; Sikka, Vinod K; Rar, Andrei; Pharr, George Mathews; Keiser, James R; Walls, Claudia Alexandra

    2003-01-01

    Work by Scruggs in the 1960s demonstrated that tensile ductility could be achieved at room temperature in powder metallurgically-produced Cr alloyed with MgO. During consolidation, much of the MgO converted to the MgCr{sub 2}O{sub 4} spinel phase, which was hypothesized to getter nitrogen from the Cr, rendering it ductile. We have duplicated this effect, achieving room temperature tensile elongations of 4% for hot-pressed Cr-6MgO-(0-1)Ti (wt.%) and 10% for hot-pressed and extruded Cr-6MgO-0.75Ti. Direct incorporation of nitrogen into the MgCr{sub 2}O{sub 4} phase was not detected; however, impurities, particularly nitrogen and sulfur, were observed to segregate to and/or precipitate at interfaces between the MgO/MgCr{sub 2}O{sub 4} phases and the Cr matrix. Exploratory studies of other non-spinel forming oxide dispersions (La{sub 2}O{sub 3}, TiO{sub 2} and Y{sub 2}O{sub 3}) showed a similar pattern of impurity segregation/precipitation, suggesting that there is nothing unique about spinel dispersions in Cr with regards to impurities. However, none of these other dispersions resulted in similar levels of tensile elongation.

  16. CRYSTALLINE CHROMIUM DOPED ALUMINUM OXIDE (RUBY) USE AS A LUMINESCENT SCREEN FOR PROTON BEAMS.

    SciTech Connect

    BROWN,K.A.; GASSNER,D.M.

    1999-03-29

    In our search for a better luminescent screen material, we tested pieces of mono-crystalline chromium doped aluminum oxide (more commonly known as a ruby) using a 24 GeV proton beam. Due to the large variations in beam intensity and species which are run at the Alternating Gradient Synchrotron (AGS), we hope to find a material which can sufficiently luminesce, is compatible in vacuum, and maintain its performance level over extended use. Results from frame grabbed video camera images using a variety of neutral density filters are presented.

  17. Supercritical water oxidation of tannery sludge: stabilization of chromium and destruction of organics.

    PubMed

    Zou, Daoan; Chi, Yong; Dong, Jun; Fu, Chao; Wang, Fei; Ni, Mingjiang

    2013-10-01

    The supercritical water oxidation (SCWO) of industrial tannery sludge was investigated to understand the simultaneous destruction of organic pollutants and recovery of high content chromium. Experiments were performed in a batch reactor at temperatures of 350-500 °C, reaction time of 150-300 s and different oxygen ratios, to exhibit the effect of operation conditions. Results showed that removal efficiency of chemical oxygen demand (COD) increased with higher temperature, larger oxidant amount and reaction time; a maximum value of 96% was obtained. Meanwhile, destruction yield was much higher under supercritical conditions than that in subcritical water. In addition, removal efficiency of Cr from sludge reached more than 98% under all conditions; higher temperature played a positive role. Further, leaching toxicity tests of heavy metals in solid products were conducted based on toxicity characteristic leaching procedure. All heavy metals except nickel showed a greatly reduced leaching toxicity through their stabilization. The chromium oxide recovered in ash was amorphous below 550 °C, so that the structure of Cr could not be identified by X-ray diffraction pattern. Special attention should be paid on nickel as its leaching toxicity increased due to the corrosion of reactor surface under severe reaction conditions.

  18. Evolution of microstructure and residual stress in sputtered chromium and chromium(x) nitrogen(y) thin films

    NASA Astrophysics Data System (ADS)

    Zhao, Zhibo

    This dissertation examines several fundamental aspects of sputtered films, including chemistry, structure, texture, residual stress and growth morphology. The systems considered are Cr films, CxNy films and Ta films. In the first system, the studies focus on some of the unique microstructural features of Cr films. These films develop well-organized anisotropic microstructures and in-plane texture. A texture turnover with thickness has been revealed. The out-of-plane preferred orientation changes from [110] to [111], and conformally, the in-plane preferred orientations vary as well. A new methodology has been developed, in which an anisotropic in-plane stress distribution in a thin film can be determined. This approach has been applied to the Cr films. The anisotropic stresses in these films are related to the evolution of anisotropic microstructure and in-plane texture. The studies of reactively sputtered CrxNy thin films concentrate on phase formation, microstructure, texture, residual stress and growth morphology. It has been shown that these characteristics are predominantly affected by nitrogen flows. The phases identified in the films include Cr, hexagonal Cr2N, and cubic CrxNy, depending on deposition conditions. The composition of the cubic phase exhibits a wide homogeneity span as indicated by large variations of its lattice parameter. At certain nitrogen flow, a nano-crystalline, N-deficient CrxN y film can be obtained. The CrxNy films deposited at high nitrogen flows develop both out-of-plane texture and in-plane texture. In these films, the elongated grains align crystallographically, forming well-defined microstructures. A new experimental apparatus, which utilizes white beam transmission Laue topography and concomitant radiography, has been developed and applied to study cracking/delamination of thin films. Using the systems, the sputtered Ta and CrN films have been studied, and their failures are related to different types of stress development

  19. Characterization by temperature-programmed reduction and by temperature-programmed oxidation (TPR-TPO) of chromium (III) oxide-based catalysts: Correlation with the catalytic activity for hydrofluoroalkane synthesis

    SciTech Connect

    Brunet, S.; Requieme, B.; Matouba, E.; Barrault, J.; Blanchard, M.

    1995-03-01

    The catalytic activity of chromium (III) oxide for the fluorination of CF{sub 3}CH{sub 2}Cl (HCFC 133a) is proportional to the number of reversibly oxidized sites. The proportionality coefficient depends on the atmosphere employed during the pretreatment of the catalyst. The temperature-programmed reduction and temperature-programmed oxidation experiments constitute a simple technique that allows the number of reversibly oxidized chromium atoms to be measured. The method of preparation of the chromium hydroxide has little effect on the catalytic properties of chromium (III) oxide. The activation atmosphere and the temperature are essential parameters in the formation of chromium (III) oxide from hydroxide. Indeed, the most active chromium (III) oxide for the fluorination of CF{sub 3}CH{sub 2}Cl is obtained by thermal treatment of hydroxide at 380{degrees}C under nitrogen. 20 refs., 5 figs., 4 tabs.

  20. The Effect of Silicon and Aluminum Additions on the Oxidation Resistance of Lean Chromium Stainless Steels

    SciTech Connect

    Dunning, J.S.; Alman, D.E.; Rawers, J.C.

    2001-09-01

    The effect of Si and Al additions on the oxidation of lean chromium austenitic stainless steels has been studied. A baseline composition of Fe-16Cr-16Ni-2Mn-1Mo was selected to allow combined Si and Al additions of up to 5 wt. pct. in a fully austenitic alloy. The baseline composition was selected using a net Cr equivalent equation to predict the onset of G-ferrite formation in austenite. Cyclic oxidation tests in air for 1000 hours were carried out on alloys with Si only or combined Si and Al additions in the temperature range 700 C to 800 C. Oxidation resistance of alloys with Si only additions were outstanding, particularly at 800 C. It was evident that different rate controlling mechanisms for oxidation were operative at 700 C and 800 C in the Si alloys. In addition, Si alloys pre-oxidized at 800 C, showed a zero weight gain in subsequent testing for 1000 hours at 700 C. The rate controlling mechanism in alloys with combined Si and Al addition for oxidation at 800 C was also different than alloys with Si only. SEM and ESCA analysis of the oxide films and base material at the oxide/base metal interface were conducted to study potential rate controlling mechanisms.

  1. Sprayed lanthanum doped zinc oxide thin films

    NASA Astrophysics Data System (ADS)

    Bouznit, Y.; Beggah, Y.; Ynineb, F.

    2012-01-01

    Lanthanum doped zinc oxide thin films were deposited on soda-lime glass substrates using a pneumatic spray pyrolysis technique. The films were prepared using different lanthanum concentrations at optimum deposition parameters. We studied the variations in structural, morphological and optical properties of the samples due to the change of doping concentration in precursor solutions. X-ray diffraction (XRD) patterns show that pure and La-doped ZnO thin films are highly textured along c-axis perpendicular to the surface of the substrate. Scanning electron micrographs show that surface morphology of ZnO films undergoes a significant change according to lanthanum doping. All films exhibit a transmittance higher than 80% in the visible region.

  2. Fabrication and characterization of a deep ultraviolet wire grid polarizer with a chromium-oxide subwavelength grating.

    PubMed

    Asano, Kosuke; Yokoyama, Satoshi; Kemmochi, Atsushi; Yatagai, Toyohiko

    2014-05-01

    A wire grid polarizer comprised of chromium oxide is designed for a micro-lithography system using an ArF excimer laser. Optical properties for some material candidates are calculated using a rigorous coupled-wave analysis. The chromium oxide wire grid polarizer with a 90 nm period is fabricated by a double-patterning technique using KrF lithography and dry etching. The extinction ratio of the grating is greater than 20 dB (100:1) at a wavelength of 193 nm. Differences between the calculated and experimental results are discussed.

  3. Amorphous iron–chromium oxide nanoparticles with long-term stability

    SciTech Connect

    Iacob, Mihail; Cazacu, Maria; Turta, Constantin; Doroftei, Florica; Botko, Martin; Čižmár, Erik; Zeleňáková, Adriana; Feher, Alexander

    2015-05-15

    Highlights: • Fe–Cr oxide nanoparticles with pre-established metals ratio were obtained. • The amorphous state and its long-term stability were highlighted by X-ray diffraction. • The average diameter of dried nanoparticles was 3.5 nm, as was estimated by TEM, AFM. • In hexane dispersion, nanoparticles with diameter in the range 2.33–4.85 nm were found. • Superparamagnetic state of NPs co-exists with diamagnetism of the organic layer. - Abstract: Iron–chromium nanoparticles (NPs) were obtained through the thermal decomposition of μ{sub 3}-oxo heterotrinuclear (FeCr{sub 2}O) acetate in the presence of sunflower oil and dodecylamine (DA) as surfactants. The average diameter of the NPs was 3.5 nm, as estimated on the basis of transmission electron microscopy and atomic force microscopy images. Both techniques revealed the formation of roughly approximated spheres with some irregularities and agglomerations in larger spherical assemblies of 50–100 nm. In hexane, NPs with diameters in the 2.33–4.85 nm range are individually dispersed, as emphasized by dynamic light scattering measurements. The amorphous nature of the product was emphasized by X-ray powder diffraction. The study of the magnetic properties shows the presence of superparamagnetic state of iron–chromium oxide NPs and the diamagnetic contribution from DA layer forming a shell of NPs.

  4. Electrochromism: from oxide thin films to devices

    NASA Astrophysics Data System (ADS)

    Rougier, A.; Danine, A.; Faure, C.; Buffière, S.

    2014-03-01

    In respect of their adaptability and performance, electrochromic devices, ECDs, which are able to change their optical properties under an applied voltage, have received significant attention. Target applications are multifold both in the visible region (automotive sunroofs, smart windows, ophthalmic lenses, and domestic appliances (oven, fridge…)) and in the infrared region (Satellites Thermal Control, IR furtivity). In our group, focusing on oxide thin films grown preferentially at room temperature, optimization of ECDs performances have been achieved by tuning the microstructure, the stoichiometry and the cationic composition of the various layers. Herein, our approach for optimized ECDs is illustrated through the example of WO3 electrochromic layer in the visible and in the IR domain as well as ZnO based transparent conducting oxide layer. Targeting the field of printed electronics, simplification of the device architecture for low power ECDs is also reported.

  5. Hexavalent Chromium-Induced Apoptosis in Rat Uterus: Involvement of Oxidative Stress.

    PubMed

    Marouani, Neila; Tebourbi, Olfa; Mokni, Moncef; Yacoubi, Mohamed Tahar; Sakly, Mohsen; Benkhalifa, Moncef; Rhouma, Khémais Ben

    2015-01-01

    The present study is designed to test the hypothesis that oxidative stress mediates hexavalent chromium (VI)-induced apoptosis in uterus. Female Wistar rats received an intraperitoneal (i.p.) injection of potassium dichromate at doses of 1 and 2 mg/kg. Superoxide anion production was assessed by determination of the reduction of cytochrome c and iodonitrotetrazolium (INT), lipid peroxidation (LPO), metallothioneins (MTs), and catalase (CAT) activity. The expression of Bax and Bcl-2 proteins was investigated. After 15 days of treatment, an increase of LPO and MT levels occurred, whereas CAT activity decreased. Intense apoptosis was observed in endometriotic stromal cells of Cr-exposed rats. Bax protein expression was induced in endometriotic stromal cells with 1 mg of Cr(VI)/kg, and in stromal and epithelial cells at the higher dose. These results clearly suggest that Cr(VI) subacute treatment causes oxidative stress in rat uterus, leading to endometriotic stromal cells apoptosis.

  6. Cobalt-chromium spinel catalyst of exhaustive oxidation of ethyl chloride

    SciTech Connect

    Vlasenko, V.M.; Feshchenko, L.F.; Chernobrivets, V.L.

    1992-05-10

    Ethyl chloride is formed as a by-product in many plants for organochlorine synthesis and is emitted into the atmosphere with gaseous wastes, polluting the environment. Due to the toxicity of ethyl chloride, it is necessary to create methods for scrubbing this substance from waste gases. The catalytic method based on the reaction of exhaustive oxidation of the removed contaminant to carbon dioxide, water, and hydrogen chloride or chlorine, which can either be removed or used for production purposes in some cases, is a relatively effective and economical method of scrubbing toxic organochlorine contaminants from gases. Catalytic oxidation of organochlorine compounds usually takes place on catalysts containing noble metals. The shortage of catalysts resistant to aggressive media has prevented the wide use of this method. The authors present a synthesis method for a cobalt-chromium catalyst for this purpose. 6 refs., 3 figs., 3 tabs.

  7. rf plasma oxidation of Ni thin films sputter deposited to generate thin nickel oxide layers

    SciTech Connect

    Hoey, Megan L.; Carlson, J. B.; Osgood, R. M. III; Kimball, B.; Buchwald, W.

    2010-10-11

    Nickel oxide (NiO) layers were formed on silicon (Si) substrates by plasma oxidation of nickel (Ni) film lines. This ultrathin NiO layer acted as a barrier layer to conduction, and was an integral part of a metal-insulator-metal (MIM) diode, completed by depositing gold (Au) on top of the oxide. The electrical and structural properties of the NiO thin film were examined using resistivity calculations, current-voltage (I-V) measurements and cross-sectional transmission electron microscopy (XTEM) imaging. The flow rate of the oxygen gas, chamber pressure, power, and exposure time and their influence on the characteristics of the NiO thin film were studied.

  8. Chromium poisoning in (La,Sr)MnO3 cathode: Three-dimensional simulation of a solid oxide fuel cell

    NASA Astrophysics Data System (ADS)

    Miyoshi, Kota; Iwai, Hiroshi; Kishimoto, Masashi; Saito, Motohiro; Yoshida, Hideo

    2016-09-01

    A three-dimensional numerical model of a single solid oxide fuel cell (SOFC) considering chromium poisoning on the cathode side has been developed to investigate the evolution of the SOFC performance over long-term operation. The degradation model applied in the simulation describes the loss of the cathode electrochemical activity as a decrease in the active triple-phase boundary (TPB) length. The calculations are conducted for two types of cell: lanthanum strontium manganite (LSM)/yttria-stabilized zirconia (YSZ)/Ni-YSZ and LSM-YSZ/YSZ/Ni-YSZ. Their electrode microstructures are acquired by imaging with a focused ion beam scanning-electron microscope (FIB-SEM). The simulation results qualitatively reproduce the trends of chromium poisoning reported in the literature. It has been revealed that the performance degradation by chromium is primarily due to an increase in the cathode activation overpotential. In addition, in the LSM-YSZ composite cathode, TPBs in the vicinity of the cathode-electrolyte interface preferentially deteriorate, shifting the active reaction site towards the cathode surface. This also results in an increase in the cathode ohmic loss associated with oxide ion conduction through the YSZ phase. The effects of the cell temperature, the partial pressure of steam at the chromium source, the cathode microstructure, and the cathode thickness on chromium poisoning are also discussed.

  9. Computer Simulation and Experimental Validation on the Oxidation and Sulfate Corrosion Resistance of Novel Chromium Based High Temperature Alloys

    SciTech Connect

    Yang, Shizhong

    2013-02-28

    This report summarizes our recent works of ab initio molecular dynamics inter-atomic potentials development on dilute rare earth element yttrium (Y) etc. doped chromium (Cr) alloy systems, its applications in oxidation and corrosion resistance simulation, and experiment validation on the candidate systems. The simulation methods, experimental validation techniques, achievements already reached, students training, and future improvement are briefly introduced.

  10. Role of Iron Anode Oxidation on Transformation of Chromium by Electrolysis.

    PubMed

    Sarahney, Hussam; Mao, Xuhui; Alshawabkeh, Akram N

    2012-12-30

    The potential for chemical reduction of hexavalent chromium Cr(VI) in contaminated water and formation of a stable precipitate by Zero Valent Iron (ZVI) anode electrolysis is evaluated in separated electrodes system. Oxidation of iron electrodes produces ferrous ions causing the development of a reducing environment in the anolyte, chemical reduction of Cr(VI) to Cr(III) and formation of stable iron-chromium precipitates. Cr(VI) transformation rates are dependent on the applied electric current density. Increasing the electric current increases the transformation rates; however, the process is more efficient under lower volumetric current density (for example 1.5 mA L(-1) in this study). The transformation follows a zero order rate that is dependent on the electric current density. Cr(VI) transformation occurs in the anolyte when the electrodes are separated as well as when the electrolytes (anolyte/catholyte) are mixed, as used in electrocoagulation. The study shows that the transformation occurs in the anolyte as a result of ferrous ion formation and the product is a stable Fe(15)Cr(5)(OH)(60) precipitate.

  11. Role of Iron Anode Oxidation on Transformation of Chromium by Electrolysis

    PubMed Central

    Sarahney, Hussam; Mao, Xuhui; Alshawabkeh, Akram N.

    2012-01-01

    The potential for chemical reduction of hexavalent chromium Cr(VI) in contaminated water and formation of a stable precipitate by Zero Valent Iron (ZVI) anode electrolysis is evaluated in separated electrodes system. Oxidation of iron electrodes produces ferrous ions causing the development of a reducing environment in the anolyte, chemical reduction of Cr(VI) to Cr(III) and formation of stable iron-chromium precipitates. Cr(VI) transformation rates are dependent on the applied electric current density. Increasing the electric current increases the transformation rates; however, the process is more efficient under lower volumetric current density (for example 1.5 mA L−1 in this study). The transformation follows a zero order rate that is dependent on the electric current density. Cr(VI) transformation occurs in the anolyte when the electrodes are separated as well as when the electrolytes (anolyte/catholyte) are mixed, as used in electrocoagulation. The study shows that the transformation occurs in the anolyte as a result of ferrous ion formation and the product is a stable Fe15Cr5(OH)60 precipitate. PMID:23284182

  12. Geogenic Cr oxidation on the surface of mafic minerals and the hydrogeological conditions influencing hexavalent chromium concentrations in groundwater.

    PubMed

    Kazakis, N; Kantiranis, N; Voudouris, K S; Mitrakas, M; Kaprara, E; Pavlou, A

    2015-05-01

    This study aims to specify the source minerals of geogenic chromium in soils and sediments and groundwater and to determine the favorable hydrogeological environment for high concentrations of Cr(VI) in groundwaters. For this reason, chromium origin and the relevant minerals were identified, the groundwater velocity was calculated and the concentrations of Cr(VI) in different aquifer types were determined. Geochemical and mineralogical analyses showed that chromium concentrations in soils and sediments range from 115 to 959 mg/kg and that serpentine prevails among the phyllosilicates. The high correlation between chromium and serpentine, amphibole and pyroxene minerals verifies the geogenic origin of chromium in soils and sediments and, therefore, in groundwater. Manganese also originates from serpentine, amphibole and pyroxene, and is strongly correlated with chromium, indicating that the oxidation of Cr(III) to Cr(VI) is performed by manganese-iron oxides located on the surface of Cr-Mn-rich minerals. Backscattered SEM images of the soils revealed the unweathered form of chromite grains and the presence of Fe-Mn-rich oxide on the outer surface of serpentine grains. Chemical analyses revealed that the highest Cr(VI) concentrations were found in shallow porous aquifers with low water velocities and their values vary from 5 to 70 μg/L. Cr(VI) concentrations in ophiolitic complex aquifers ranged between 3 and 17 μg/L, while in surface water, karst and deeper porous aquifers, Cr(VI) concentrations were lower than the detection limit of 1.4 μg/L.

  13. Chromium oxide as a metal diffusion barrier layer: An x-ray absorption fine structure spectroscopy study

    NASA Astrophysics Data System (ADS)

    Ahamad Mohiddon, Md.; Lakshun Naidu, K.; Ghanashyam Krishna, M.; Dalba, G.; Ahmed, S. I.; Rocca, F.

    2014-01-01

    The interaction at the interface between chromium and amorphous Silicon (a-Si) films in the presence of a sandwich layer of chromium oxide is investigated using X-ray absorption fine structure (XAFS) spectroscopy. The oxidized interface was created, in situ, prior to the deposition of a 400 nm tick a-Si layer over a 50 nm tick Cr layer. The entire stack of substrate/metallic Cr/Cr2O3/a-Si was then annealed at temperatures from 300 up to 700 °C. Analysis of the near edge and extended regions of each XAFS spectrum shows that only a small fraction of Cr is able to diffuse through the oxide layer up to 500 °C, while the remaining fraction is buried under the oxide layer in the form of metallic Cr. At higher temperatures, diffusion through the oxide layer is enhanced and the diffused metallic Cr reacts with a-Si to form CrSi2. At 700 °C, the film contains Cr2O3 and CrSi2 without evidence of unreacted metallic Cr. The activation energy and diffusion coefficient of Cr are quantitatively determined in the two temperature regions, one where the oxide acts as diffusion barrier and another where it is transparent to Cr diffusion. It is thus demonstrated that chromium oxide can be used as a diffusion barrier to prevent metal diffusion into a-Si.

  14. Metalloradical Complexes of Manganese and Chromium Featuring an Oxidatively Rearranged Ligand

    PubMed Central

    Çelenligil-Çetin, Remle; Paraskevopoulou, Patrina; Lalioti, Nikolia; Sanakis, Yiannis; Staples, Richard J.; Rath, Nigam P.; Stavropoulos, Pericles

    2009-01-01

    Redox events involving both metal and ligand sites are receiving increased attention since a number of biological processes direct redox equivalents toward functional residues. Metalloradical synthetic analogs remain scarce and require better definition of their mode of formation and subsequent operation. The trisamido-amine ligand [(RNC6H4)3N]3−, where R is the electron-rich 4-t-BuPh, is employed in this study to generate redox active residues in manganese and chromium complexes. Solutions of [(L1)Mn(II)–THF]− in THF are oxidized by dioxygen to afford [(L1re–1)Mn(III)–(O)2–Mn(III)(L1re–1)]2− as the major product. The rare dinuclear manganese (III,III) core is stabilized by a rearranged ligand that has undergone an one-electron oxidative transformation, followed by retention of the oxidation equivalent as a π radical in an o-diiminobenzosemiquinonate moiety. Magnetic studies indicate that the ligand-centered radical is stabilized by means of extended antiferromagnetic coupling between the S = ½ radical and the adjacent S = 2 Mn(III) site, as well as between the two Mn(III) centers via the dioxo bridge. Electrochemical and EPR data suggest that this system can store higher levels of oxidation potency. Entry to the corresponding Cr(III) chemistry is achieved by employing CrCl3 to access both [(L1)Cr(III)–THF] and [(L1re–1)Cr(III)–THF(Cl)], featuring the intact and the oxidatively rearranged ligands, respectively. The latter is generated by ligand-centered oxidation of the former compound. The rearranged ligand is perceived to be the product of an one-electron oxidation of the intact ligand to afford a metal-bound aminyl radical that subsequently mediates a radical 1,4-(N-to-N) aryl migration. PMID:18937446

  15. Review of Zinc Oxide Thin Films

    DTIC Science & Technology

    2014-12-23

    Laboratory Air Force Materiel Command   a. REPORT U   b. ABSTRACT U   c. THIS PAGE U REPORT DOCUMENTATION PAGE Form ApprovedOMB No. 0704-0188 The public...PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ORGANIZATION. 1.  REPORT DATE (DD-MM-YYYY)      18-12-2014 2.  REPORT TYPE      Final Performance 3.  DATES...Standard Form 298 (Rev. 8/98) Prescribed by ANSI Std. Z39.18 1    Review of Zinc Oxide Thin Films   Abstract  The present review paper reports on the

  16. Four-Wire Impedance Spectroscopy on Planar Zeolite/Chromium Oxide Based Hydrocarbon Gas Sensors

    PubMed Central

    Hagen, Gunter; Schulz, Anne; Knörr, Matthias; Moos, Ralf

    2007-01-01

    Impedometric zeolite hydrocarbon sensors with a chromium oxide intermediate layer show a very promising behavior with respect to sensitivity and selectivity. The underlying physico-chemical mechanism is under investigation at the moment. In order to verify that the effect occurs at the electrode and that zeolite bulk properties remain almost unaffected by hydrocarbons, a special planar setup was designed, which is very close to real sensor devices. It allows for conducting four-wire impedance spectroscopy as well as two-wire impedance spectroscopy. Using this setup, it could be clearly demonstrated that the sensing effect can be ascribed to an electrode impedance. Furthermore, by combining two- and four-wire impedance measurements at only one single frequency, the interference of the volume impedance can be suppressed and an easy signal evaluation is possible, without taking impedance data at different frequencies.

  17. In Vivo Wear Performance of Cobalt-Chromium Versus Oxidized Zirconium Femoral Total Knee Replacements.

    PubMed

    Gascoyne, Trevor C; Teeter, Matthew G; Guenther, Leah E; Burnell, Colin D; Bohm, Eric R; Naudie, Douglas R

    2016-01-01

    This study examines the damage and wear on the polyethylene (PE) inserts from 52 retrieved Genesis II total knee replacements to identify differences in tribological performance between matched pairs of cobalt-chromium (CoCr) and oxidized zirconium (OxZr) femoral components. Observer damage scoring and microcomputed tomography were used to quantify PE damage and wear, respectively. No significant differences were found between CoCr and OxZr groups in terms of PE insert damage, surface penetration, or wear. No severe damage such as cracking or delamination was noted on any of the 52 PE inserts. Observer damage scoring did not correlate with penetrative or volumetric PE wear. The more costly OxZr femoral component does not demonstrate clear tribological benefit over the standard CoCr component in the short term with this total knee replacement design.

  18. The x ray microprobe determination of chromium oxidation state in olivine from lunar basalt and kimberlitic diamonds

    NASA Technical Reports Server (NTRS)

    Sutton, S. R.; Bajt, S.; Rivers, M. L.; Smith, J. V.

    1993-01-01

    The synchrotron x-ray microprobe is being used to obtain oxidation state information on planetary materials with high spatial resolution. Initial results on chromium in olivine from various sources including laboratory experiments, lunar basalt, and kimberlitic diamonds are reported. The lunar olivine was dominated by Cr(2+) whereas the diamond inclusions had Cr(2+/Cr(3+) ratios up to about 0.3. The simpliest interpretation is that the terrestrial olivine crystallized in a more oxidizing environment than the lunar olivine.

  19. Formation of Superhexagonal Chromium Hydride by Exposure of Chromium Thin Film to High Temperature, High Pressure Hydrogen in a Ballistic Compressor.

    NASA Astrophysics Data System (ADS)

    Pan, Yi.

    This dissertation describes a novel, non-equilibrium method which was used to synthesize a new chromium hydride phase. Single crystal, body centered cubic Cr thin films were prepared by vacuum evaporation. These films were exposed to high temperature (close to the melting point of Cr), high pressure hydrogen gas in a ballistic compressor. This was followed by rapid cooling (>10^5^ circC/s) to room temperature. Using the transmission electron microscope (TEM), second phase particles of superhexagonal structure, which has lattice constant A = 4.77A and C/A = 1.84, are found in the films. This structure has a volume per Cr atom slightly larger than that of hexagonal closed packed CrH, so that the superhexagonal structure may contain more hydrogen than the hexagonal close packed CrH. The superhexagonal particles have a definite orientation relationship with the matrix: (021) _{rm sh} // (001) _{rm b} and (212)_{rm sh} // (110)_{rm b} . The superhexagonal structure is quite stable in air and at room temperature, but decomposes to body centered cubic Cr when bombarded by the electron beam in the TEM. No such particles were observed in Cr films exposed to pure argon under similar conditions in the ballistic compressor. Positive identification of hydrogen content was obtained by high-temperature vacuum extraction in a discharge tube. After vacuum extraction, hydrogen spectrum was observed, and the intensity of electron diffraction from superhexagonal structure decreased. Using an energy dispersive spectrometer with the capability of detecting elements down to atomic number six (carbon), no changes in composition of the films were found by comparing the characteristic x-ray spectra of the same film before and after exposure to hot, dense hydrogen in the ballistic compressor. This result suggests that this non-equilibrium method may be used for other metal-hydrogen system to obtain new structural phases that are of scientific or technological interest.

  20. Thin films for micro solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Beckel, D.; Bieberle-Hütter, A.; Harvey, A.; Infortuna, A.; Muecke, U. P.; Prestat, M.; Rupp, J. L. M.; Gauckler, L. J.

    Thin film deposition as applied to micro solid oxide fuel cell (μSOFC) fabrication is an emerging and highly active field of research that is attracting greater attention. This paper reviews thin film (thickness ≤1 μm) deposition techniques and components relevant to SOFCs including current research on nanocrystalline thin film electrolyte and thin-film-based model electrodes. Calculations showing the geometric limits of μSOFCs and first results towards fabrication of μSOFCs are also discussed.

  1. Rapid-extraction oxidation process to recover and reuse copper chromium and arsenic from industrial wood preservative sludge.

    PubMed

    Kazi, F K M; Cooper, P A

    2002-01-01

    Chromated copper arsenate (CCA) wood preservative can form insoluble sludges when the hexavalent chromium component is reduced by wood extractives, wood particles and preservative additives in the solution. This sludge accumulates in treating solution work tanks, sumps and in-line filters and must be disposed of as hazardous wastes by waste disposal companies at high costs. A number of commercial sludges were investigated and found to contain 18-94% copper, chromium and arsenic as oxides combined with sand, oil, wood particles, additives and wood extractives. We have developed a multi-stage recycling process whereby approximately 97% of the CCA components are recovered from the sludge. It involves extraction with sodium hypochlorite to remove and oxidize chromium (more than 90%) and extract most of the arsenic (approx. 80%) followed by extraction of the copper and remaining arsenic and chromium with phosphoric acid. The phosphoric acid extract contains some trivalent chromium, which is subsequently oxidized by sodium hypochlorite. The combined oxidized extract containing CrVI, CuII and AsV was compatible with CCA treating solutions and could be re-used commercially for treating wood without having a significant effect on the preservative fixation rate or the leach resistance of the treated wood. A cost analysis showed that the economic savings from recovery of CCA chemicals and reduced landfill costs exceeded the variable costs for materials and energy for the process by as much as Can $966 per tonne of sludge if sodium sulfite can be acquired in bulk quantities for the process.

  2. Electrochemical investigation of chromium oxide-coated Ti-6Al-4V and Co-Cr-Mo alloy substrates.

    PubMed

    Swaminathan, Viswanathan; Zeng, Haitong; Lawrynowicz, Daniel; Zhang, Zongtao; Gilbert, Jeremy L

    2011-08-01

    Hard coatings for articulating surfaces of total joint replacements may improve the overall wear resistance. However, any coating approach must take account of changes in corrosion behavior. This preliminary assessment analyzes the corrosion kinetics, impedance and mechanical-electrochemical stability of 100 μm thick plasma sprayed chromium oxide (Cr₂O₃) coatings on bearing surfaces in comparison to the native alloy oxide films on Co-Cr-Mo and Ti-6Al-6V. Cyclic potentiodynamic polarization, electrochemical impedance spectroscopy, and mechanical abrasion under potentiostatic conditions were performed on coated and substrate surfaces in physiological saline. SEM analysis characterized the coating morphology. The results showed that the corrosion current density values of chromium oxide coatings (0.4-1.2 μA/cm²) were of the same order of magnitude as Ti-6Al-4V alloy. Mechanical abrasion did not increase corrosion rates of chromium oxide coatings but did for uncoated Co-Cr-Mo and Ti-6Al-4V. The impedance response of chromium oxide coatings was very different than Co-Cr-Mo and Ti-6Al-4V native oxides characterized by a defected coating model. More of a frequency-independent purely resistive response was seen in mid-frequency range for the coatings (CPE(coat) : 40-280 nF/cm² (rad/s)(1-α) , α: 0.67-0.83) whereas a more capacitive character is seen for Co-Cr-Mo and Ti-6Al-4V (CPE(ox) around 20 μF/cm² (rad/s)(1-α) , α around 0.9). Pores, interparticle gaps and incomplete fusion typical for thermal spray coatings were present in these oxides which could have influenced corrosion resistance. The coating microstructure could have allowed some fluid penetration. Overall, these coatings appear to have suitable corrosion properties for wear surfaces.

  3. Selenium alleviates chromium toxicity by preventing oxidative stress in cabbage (Brassica campestris L. ssp. Pekinensis) leaves.

    PubMed

    Qing, Xuejiao; Zhao, Xiaohu; Hu, Chengxiao; Wang, Peng; Zhang, Ying; Zhang, Xuan; Wang, Pengcheng; Shi, Hanzhi; Jia, Fen; Qu, Chanjuan

    2015-04-01

    The beneficial role of selenium (Se) in alleviation of chromium (Cr)-induced oxidative stress is well established. However, little is known about the underlying mechanism. The impacts of exogenous Se (0.1mg/L) on Cr(1mg/L)-induced oxidative stress and antioxidant systems in leaves of cabbage (Brassica campestris L. ssp. Pekinensis) were investigated by using cellular and biochemical approaches. The results showed that supplementation of the medium with Se was effective in reducing Cr-induced increased levels of lipid peroxides and superoxide free radicals (O(-)2(·)), as well as increasing activities of superoxide dismutase (SOD) and peroxidase (POD). Meanwhile, 1mg/L Cr induced loss of plasma membrane integrity, growth inhibition, as well as ultrastructural changes of leaves were significantly reversed due to Se supplementation in the medium. In addition, Se application significantly altered the subcellular distribution of Cr which transported from mitochondria, nucleus and the cell-wall material to the soluble fraction and chloroplasts. However, Se application did no significant alteration of Cr effects on osmotic adjustment accumulating products. The study suggested that Se is able to protect leaves of cabbage against Cr toxicity by alleviation of Cr induced oxidative stress, and re-distribution of Cr in the subcellular of the leaf. Furthermore, free radicals, lipid peroxides, activity of SOD and POD, and subcellular distribution of Cr can be considered the efficient biomarkers to indicate the efficiency of Se to detoxification Cr.

  4. Chromium(VI) oxide oxidation of non-ethoxylated and ethoxylated alcohols for determination by electrospray ionization mass spectrometry.

    PubMed

    Beneito-Cambra, Miriam; Bernabé-Zafón, Virginia; Simó-Alfonso, Ernesto F; Ramis-Ramos, Guillermo

    2010-07-30

    A new derivatization procedure to increase the sensitivity of electrospray ionization mass spectrometry (ESI-MS) to non-ethoxylated and ethoxylated alcohols was investigated. The analytes were oxidized with chromium(VI) oxide and the resulting carboxylic and ethoxy-carboxylic acids were isolated by extraction with ethyl acetate; the extracts were alkalinized and infused into the ESI-MS system working in the negative-ion mode. The yields of the combined oxidation-extraction were ca. 100% for non-ethoxylated fatty alcohols dissolved in acetone and they decreased moderately in samples containing increasing amounts of water (e.g., a 75% yield was obtained with 50% water). Ethoxylated alcohols with more than two ethylene oxide units resulted in yields of ca. 60%. Low limits of detection (LODs) were obtained when the procedure was applied to the analysis of body-care products and cosmetics containing fatty alcohols, e.g., in a varicose-vein cream, the LODs were 25 microg cetyl alcohol and 7.5 microg stearyl alcohol (detected as palmitic acid and stearic acid, respectively) per gram of sample. High molecular mass alcohols were also detected in seawater after pre-concentration by solid-phase extraction. Thus, the proposed method is particularly valuable for use in industrial samples having complex matrices and in environmental samples and it is competitive with other methods for the analysis of trace amounts of fatty alcohols.

  5. Removal of hexavalent chromium in carbonic acid solution by oxidizing slag discharged from steelmaking process in electric arc furnace

    NASA Astrophysics Data System (ADS)

    Yokoyama, Seiji; Okazaki, Kohei; Sasano, Junji; Izaki, Masanobu

    2014-02-01

    Hexavalent chromium (Cr(VI)) is well-known to be a strong oxidizer, and is recognized as a carcinogen. Therefore, it is regulated for drinking water, soil, groundwater and sea by the environmental quality standards all over the world. In this study, it was attempted to remove Cr(VI) ion in a carbonic acid solution by the oxidizing slag that was discharged from the normal steelmaking process in an electric arc furnace. After the addition of the slag into the aqueous solution contained Cr(VI) ion, concentrations of Cr(VI) ion and total chromium (Cr(VI) + trivalent chromium (Cr(III)) ions decreased to lower detection limit of them. Therefore, the used slag could reduce Cr(VI) and fix Cr(III) ion on the slag. While Cr(VI) ion existed in the solution, iron did not dissolve from the slag. From the relation between predicted dissolution amount of iron(II) ion and amount of decrease in Cr(VI) ion, the Cr(VI) ion did not react with iron(II) ion dissolved from the slag. Therefore, Cr(VI) ion was removed by the reductive reaction between Cr(VI) ion and the iron(II) oxide (FeO) in the slag. This reaction progressed on the newly appeared surface of iron(II) oxide due to the dissolution of phase composed of calcium etc., which existed around iron(II) oxide grain in the slag.

  6. Effects of FeS on Chromium Oxidation Mediated by Manganese Oxidizers

    SciTech Connect

    Wu, Youxian; Deng, Baolin

    2004-03-31

    Reductive immobilization of Cr(VI) has been widely explored as a cost-effective approach for Cr-contaminated site remediation. The long-term stability of the immobilized Cr(III), however, is a concern. Cr(III) is known to be oxidized by Mn oxides chemically and Mn-oxides could be produced through microbially mediated Mn(II) oxidation. This study examined the effect of FeS on Cr(III) oxidation mediated by Pseudomonas putida. The results showed that commercial granular FeS did not affect Cr(III) oxidation in the culture of P. putida with Mn(II), but freshly precipitated FeS slurry inhibited Cr(III) oxidation. A 10 mg/l of FeS did not inhibit the microbial growth, but delayed the production of Mn oxides, thus postponing potential Cr(III) oxidation. In the presence of excessive FeS slurry, both Cr(VI) and Mn oxides were reduced rapidly. The reduced Cr(III) could not be re-oxidized as long as freshly formed FeS was present, even in the presence of the manganese oxidizers.

  7. Stress Intensity Effect on Solid State Oxidation of Ni-Cr Alloy with Different Chromium Concentrates

    NASA Astrophysics Data System (ADS)

    Tirtom, Ismail; Das, Nishith Kumar; Shoji, Tetsuo

    Ni-base alloy is widely used in light water reactor component and the recent study has shown stress corrosion cracking (SCC). Over the years various attempts have been made to obtain mechanism of SCC but it still require more fundamental study to understand clearly. This study presents an approach based on the multiscale modeling, to assess the influence of alloy composition and stress intensity on the initial stage of solid state oxidation of the Ni-Cr alloy. The multiscale modeling considers different length scales such as finite element method (FEM) / quasi-continuum (QC) / quantum chemical molecular dynamics (QCMD), for analyzing crack tip molecular domain. The compact tension (CT) specimen of alloy 600 has been loaded for stress intensity, after that the micro region has chosen for the QC model which is a combination of continuum and atomic method. Finally, the deformed atomic position has picked for the QCMD simulation with some water molecules. The simulated results show that the chromium segregates faster than nickel atoms from the surface and make preferential bonding with oxygen. The preferential bonding forms a passive film. Applied stress intensity deformed the structure which may increase the atomic distance. As distance increases the absorption of water molecule or OH or oxygen into lattice increases. The stress intensity raises the crack tip solid state oxidation that may enhance SCC initiation.

  8. The Applicability of Oxidative Stress Biomarkers in Assessing Chromium Induced Toxicity in the Fish Labeo rohita

    PubMed Central

    Khare, Ankur; Dange, Swati

    2014-01-01

    The evaluation of metal's toxicity in freshwater is one of the imperative areas of research and there is an emergent concern on the development of techniques for detecting toxic effects in aquatic animals. Oxidative stress biomarkers are very useful in assessing the health of aquatic life and more in depth studies are necessary to establish an exact cause effect relationship. Therefore, to study the effectiveness of this approach, a laboratory study was conducted in the fish Labeo rohita as a function of hexavalent chromium and the toxicity indices using a battery of oxidative stress biomarkers such as catalase (CAT), superoxide dismutase (SOD), and glutathione reductase (GR) in the liver, muscle, gills, and brain have been studied along with biometric parameters, behavioral changes, and Cr bioaccumulation. A significant increased HSI was observed in contrast to CF which reduced significantly. SOD, CAT, and GR activity increased significantly in all the tissues of treated fishes. The bioaccumulation of Cr was highest in liver followed by gills, muscle, and brain. This study highlights the significance of using a set of integrated biomarker and advocate to include these parameters in National Water Quality Monitoring Program in areas potentially polluted with metals to assess the health of the ecosystem. PMID:25302308

  9. Method of producing solution-derived metal oxide thin films

    DOEpatents

    Boyle, Timothy J.; Ingersoll, David

    2000-01-01

    A method of preparing metal oxide thin films by a solution method. A .beta.-metal .beta.-diketonate or carboxylate compound, where the metal is selected from groups 8, 9, 10, 11, and 12 of the Periodic Table, is solubilized in a strong Lewis base to form a homogeneous solution. This precursor solution forms within minutes and can be deposited on a substrate in a single layer or a multiple layers to form a metal oxide thin film. The substrate with the deposited thin film is heated to change the film from an amorphous phase to a ceramic metal oxide and cooled.

  10. Method of producing solution-derived metal oxide thin films

    SciTech Connect

    Boyle, T.J.; Ingersoll, D.

    2000-07-11

    A method is described for preparing metal oxide thin films by a solution method. A {beta}-metal {beta}-diketonate or carboxylate compound, where the metal is selected from groups 8, 9, 10, 11, and 12 of the Periodic Table, is solubilized in a strong Lewis base to form a homogeneous solution. This precursor solution forms within minutes and can be deposited on a substrate in a single layer or a multiple layers to form a metal oxide thin film. The substrate with the deposited thin film is heated to change the film from an amorphous phase to a ceramic metal oxide and cooled.

  11. Avoiding chromium transport from stainless steel interconnects into contact layers and oxygen electrodes in intermediate temperature solid oxide electrolysis stacks

    NASA Astrophysics Data System (ADS)

    Schlupp, Meike V. F.; Kim, Ji Woo; Brevet, Aude; Rado, Cyril; Couturier, Karine; Vogt, Ulrich F.; Lefebvre-Joud, Florence; Züttel, Andreas

    2014-12-01

    We investigated the ability of (La0.8Sr0.2)(Mn0.5Co0.5)O3-δ (LSMC) and La(Ni0.6Fe0.4)O3-δ (LNF) contact coatings to avoid the transport of Cr from steel interconnects to solid oxide electrolysis electrodes, especially to the anode. The transport of chromium from commercial Crofer 22 APU (ThyssenKrupp) and K41X (AISI441, Aperam Isbergues) steels through LSMC and LNF contact coatings into adjacent (La0.8Sr0.2)MnO3-δ (LSM) oxygen electrodes was investigated in an oxygen atmosphere at 700 °C. Chromium concentrations of up to 4 atom% were detected in the contact coatings after thermal treatments for 3000 h, which also lead to the presence of chromium in adjacent LSM electrodes. Introduction of a dense (Co,Mn)3O4 coating between steel and contact coating was necessary to prevent the diffusion of chromium into contact coatings and electrodes and should lead to extended stack performance and lifetime.

  12. Cytogenetic studies of chromium (III) oxide nanoparticles on Allium cepa root tip cells.

    PubMed

    Kumar, Deepak; Rajeshwari, A; Jadon, Pradeep Singh; Chaudhuri, Gouri; Mukherjee, Anita; Chandrasekaran, Natarajan; Mukherjee, Amitava

    2015-12-01

    The current study evaluates the cytogenetic effects of chromium (III) oxide nanoparticles on the root cells of Allium cepa. The root tip cells of A. cepa were treated with the aqueous dispersions of Cr2O3 nanoparticles (NPs) at five different concentrations (0.01, 0.1, 1, 10, and 100μg/mL) for 4hr. The colloidal stability of the nanoparticle suspensions during the exposure period were ascertained by particle size analyses. After 4hr exposure to Cr2O3 NPs, a significant decrease in mitotic index (MI) from 35.56% (Control) to 35.26% (0.01μg/mL), 34.64% (0.1μg/mL), 32.73% (1μg/mL), 29.6% (10μg/mL) and 20.92% (100μg/mL) was noted. The optical, fluorescence and confocal laser scanning microscopic analyses demonstrated specific chromosomal aberrations such as-chromosome stickiness, chromosome breaks, laggard chromosome, clumped chromosome, multipolar phases, nuclear notch, and nuclear bud at different exposure concentrations. The concentration-dependent internalization/bio-uptake of Cr2O3 NPs may have contributed to the enhanced production of anti oxidant enzyme, superoxide dismutase to counteract the oxidative stress, which in turn resulted in observed chromosomal aberrations and cytogenetic effects. These results suggest that A. cepa root tip assay can be successfully applied for evaluating environmental risk of Cr2O3 NPs over a wide range of concentrations.

  13. The role of intracellular zinc in chromium(VI)-induced oxidative stress, DNA damage and apoptosis.

    PubMed

    Rudolf, Emil; Cervinka, Miroslav

    2006-09-25

    Several studies have demonstrated that zinc is required for the optimal functioning of the skin. Changes in intracellular zinc concentrations have been associated with both improved protection of skin cells against various noxious factors as well as with increased susceptibility to external stress. Still, little is known about the role of intracellular zinc in hexavalent chromium (Cr(VI))-induced skin injury. To address this question, the effects of zinc deficiency or supplementation on Cr(VI)-induced cytotoxicity, oxidative stress, DNA injury and cell death were investigated in human diploid dermal fibroblasts during 48 h. Zinc levels in fibroblasts were manipulated by pretreatment of cells with 100 microM ZnSO4 and 4 or 25 microM zinc chelator TPEN. Cr(VI) (50, 10 and 1 microM) was found to produce time- and dose-dependent cytotoxicity resulting in oxidative stress, suppression of antioxidant systems and activation of p53-dependent apoptosis which is reported for the first time in this model in relation to environmental Cr(VI). Increased intracellular zinc partially attenuated Cr(VI)-induced cytotoxicity, oxidative stress and apoptosis by enhancing cellular antioxidant systems while inhibiting Cr(VI)-dependent apoptosis by preventing the activation of caspase-3. Decreased intracellular zinc enhanced cytotoxic effects of all the tested Cr(VI) concentrations, leading to rapid loss of cell membrane integrity and nuclear dispersion--hallmarks of necrosis. These new findings suggest that Cr(VI) as a model environmental toxin may damage in deeper regions residing skin fibroblasts whose susceptibility to such toxin depends among others on their intracellular Zn levels. Further investigation of the impact of Zn status on skin cells as well as any other cell populations exposed to Cr(VI) or other heavy metals is warranted.

  14. Active Oxygen Generator by Silent Discharge and Oxidation Power in Formation of Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Tanaka, Masaaki; Kawagoe, Yasuyuki; Tsukazaki, Hisashi; Yamanishi, Kenichiro

    We have studied the low pressure silent discharge type active oxygen generator in terms of the application to the formation of oxide thin films. In this paper the oxidation power of active oxygen in the oxide thin film formation is compared with that of oxygen and ozone by forming silicon oxide thin films. It was confirmed that the oxidation power is in turn of active oxygen > ozone > oxygen from the experimental result of the number of x in SiOx thin film. Furthermore we applied active oxygen to the formation of the thin film high temperature super conductor and active oxygen was found to be effective to the formation of the thin film with high performance.

  15. Effects of chromium and chromium + vitamin C combination on metabolic, oxidative, and fear responses of broilers transported under summer conditions

    NASA Astrophysics Data System (ADS)

    Perai, A. H.; Kermanshahi, H.; Moghaddam, H. Nassiri; Zarban, A.

    2015-04-01

    A total of 240 female broilers (42 days old) were randomly assigned to four groups with six replicates and fed either a basal diet (two control groups) or a basal diet supplemented with either 1,200 μg Cr+3 from chromium (Cr) methionine/kg (Cr group) or 1,200 μg Cr+3 from Cr methionine plus 800 mg vitamin C (Vit C)/kg of diet (Cr + Vit C group). After 7 days on the dietary treatment, all groups except one of the controls were transported for 3 h under the summer conditions. Performance parameters were not influenced by dietary treatments. The plasma concentrations of insulin, triiodothyronine, triglyceride, and the ratio of triiodothyronine/thyroxin were decreased and the ratio of glucose/insulin was increased due to transport process. Road transportation also increased the plasma concentrations of protein, cholesterol, aspartate aminotransferase, and creatine kinase and decreased the concentration of low-density lipoprotein cholesterol in the Cr + Vit C group. The pretransport concentrations of insulin and triiodothyronine were highest in the Cr + Vit C group. The concentration of phosphorous was lower in the Cr group than that in the other groups after transport. No significant effects of dietary treatments were observed on the other biochemical parameters. Transport increased malondialdehyde concentration in the control group and did not change plasma total antioxidant capacity and erythrocyte glutathione peroxidase activity. Either in combination or alone, Cr increased plasma total antioxidant capacity (before transport P ≤ 0.05, after transport P = 0.07) but did not affect the concentration of malondialdehyde and activity of glutathione peroxidase. The duration of tonic immobility (TI) was similar between nontransported control chicks and transported chicks without any supplements. Pretreatment with Cr + Vit C significantly reduced the duration of TI.

  16. Chromium (VI) detoxification by oxidation and flocculation of exopolysaccharides from Arthrobacter sp. B4.

    PubMed

    Li, Yumei; Li, Qiang; Fengying, Yang; Bao, Jie; Hu, Zhiheng; Zhu, Wenwen; Zhao, Yueyue; Lin, Zhaodang; Dong, Qingsheng

    2015-11-01

    The exopolysaccharides from Arthrobacter sp. B4 (B4-EPS) exhibited an excellent chromium (VI) (Cr(VI)) removal capability without any pH adjustment, whereby 50mgL(-1) of Cr(VI) could be completely removed by 4gL(-1) of B4-EPS. The kinetics tests revealed that the first-order rate constant was 8.3×10(-5)s(-1) and the optimal reaction time was 720min. However, a low initial concentration of Cr(VI) (5-30mgL(-1)) would accelerate the reaction rate of Cr(VI) removal and shorten reaction time to less than 360min. Meanwhile, the X-ray photoelectron spectroscopy (XPS) and ultraviolet-visible (UV-vis) spectra indicated that Cr(VI) was reduced to Cr(III) by B4-EPS in accordance with the emergence of the green reaction products. Furthermore, the Fourier transform-infrared spectra (FT-IR) and nuclear magnetic resonance (NMR) showed that carboxyl and hydroxyl groups of B4-EPS contributed to Cr(VI) reduction. Additionally, a feasible scheme for Cr(VI) detoxification by oxidation and flocculation of B4-EPS is presented.

  17. Unidirectional oxide hetero-interface thin-film diode

    SciTech Connect

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

    2015-10-05

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

  18. Magnetoelectric coupling of multiferroic chromium doped barium titanate thin film probed by magneto-impedance spectroscopy

    SciTech Connect

    Shah, Jyoti Kotnala, Ravinder K. E-mail: rkkotnala@gmail.com

    2014-04-07

    Thin film of BaTiO{sub 3} doped with 0.1 at. % Cr (Cr:BTO) has been prepared by pulsed laser deposition technique. Film was deposited on Pt/SrTiO{sub 3} substrate at 500 °C in 50 mTorr Oxygen gas pressure using KrF (298 nm) laser. Polycrystalline growth of single phase Cr:BTO thin film has been confirmed by grazing angle X-ray diffraction. Cr:BTO film exhibited remnant polarization 6.4 μC/cm{sup 2} and 0.79 MV/cm coercivity. Magnetization measurement of Cr:BTO film showed magnetic moment 12 emu/cc. Formation of weakly magnetic domains has been captured by magnetic force microscopy. Theoretical impedance equation fitted to experimental data in Cole-Cole plot for thin film in presence of transverse magnetic field resolved the increase in grain capacitance from 4.58 × 10{sup −12} to 5.4 × 10{sup −11} F. Film exhibited high value 137 mV/cm-Oe magneto-electric (ME) coupling coefficient at room temperature. The high value of ME coupling obtained can reduce the typical processing steps involved in multilayer deposition to obtain multiferrocity in thin film. Barium titanate being best ferroelectric material has been tailored to be multiferroic by non ferromagnetic element, Cr, doping in thin film form opens an avenue for more stable and reliable spintronic material for low power magnetoelectric random excess memory applications.

  19. Stable Isotope Fractionation during Chromium(III) Oxidation by δ-MnO2

    NASA Astrophysics Data System (ADS)

    Wang, D. T.; Fregoso, D. C.; Ellis, A. S.; Johnson, T. M.; Bullen, T. D.

    2010-12-01

    Hexavalent chromium is a highly mobile anthropogenic pollutant, and reduction of Cr(VI) to the less-soluble Cr(III) is the most important natural process involved in contamination attenuation. Earlier work has shown a preferential reduction of lighter Cr stable isotopes attributed to a kinetically-controlled mechanism, and isotope ratio measurements may be used as indicators of Cr(VI) reduction [1]. Recent work has detected no significant isotope exchange between dissolved Cr(III) and Cr(VI) over a period of days to weeks, and has suggested that complex bidirectional reactions control fractionation during Cr(III) oxidation by H2O2 [2]. Previous studies on oxidation by pyrolusite (β-MnO2) have reported δ53/52Cr up to approximately +1.1‰ in the Cr(VI) product [3]. However, laboratory investigations of fractionation during Cr(III) oxidation by birnessite (δ-MnO2) have been inconclusive, and oxidation mechanisms remain unclear [4]. In order to fully exploit stable isotope fractionation during redox reactions of Cr in groundwater as an indicator of Cr attenuation, the effect of Cr(III) oxidation on isotope ratios must be better understood. We will report the latest measurements of isotope fractionation during oxidation on birnessite under varying pH and MnO2 and Cr(III) concentrations. Our preliminary findings (at initial Cr(III) and δ-MnO2 concentrations of 10 mg/L and 100 mg/L, respectively) show the Cr(VI) product shifted by -0.5‰ to +0.0‰ relative to the reactant at pH ≈ 4.5. The reaction is incomplete and plateaus within 60 min. Unlike that observed with pyrolusite, fractionation during Cr oxidation on birnessite is much smaller or absent. These initial results suggest that kinetic effects are either very small or are negated by back reaction or equilibration in the multi-step oxidation mechanism. Alternatively, in our experiments, a step involving little isotope fractionation may be rate-limiting; thus, the final magnitude of isotope fractionation

  20. Structural characterization of impurified zinc oxide thin films

    SciTech Connect

    Trinca, L. M.; Galca, A. C. Stancu, V. Chirila, C. Pintilie, L.

    2014-11-05

    Europium doped zinc oxide (Eu:ZnO) thin films have been obtained by pulsed laser deposition (PLD). 002 textured thin films were achieved on glass and silicon substrates, while hetero-epilayers and homo-epilayers have been attained on single crystal SrTiO{sub 3} and ZnO, respectively. X-ray Diffraction (XRD) was employed to characterize the Eu:ZnO thin films. Extended XRD studies confirmed the different thin film structural properties as function of chosen substrates.

  1. Titanium diboride-chromium diboride-yttrium titanium oxide ceramic composition and a process for making the same

    DOEpatents

    Holcombe, Cressie E.; Dykes, Norman L.

    1991-01-01

    A ceramic composition is described. The ceramic composition consists essentially of from about 84 to 96 w/o titanium diboride, from about 1 to 9 w/o chromium diboride, and from about 3 to about 15 w/o yttrium-titanium-oxide. A method of making the ceramic composition is also described. The method of making the ceramic composition comprises the following steps: Step 1--A consolidated body containing stoichiometric quantities of titanium diboride and chromium diboride is provided. Step 2--The consolidated body is enclosed in and in contact with a thermally insulated package of yttria granules having a thickness of at least 0.5 inches. Step 3--The consolidated body enclosed in the thermally insulated package of yttria granules is heated in a microwave oven with microwave energy to a temperature equal to or greater than 1,900 degrees centigrade to sinter and uniformly disperse yttria particles having a size range from about 1 to about 12 microns throughout the consolidated body forming a densified body consisting essentially of titanium diboride, chromium diboride, and yttrium-titanium-oxide. The resulting densified body has enhanced fracture toughness and hardness.

  2. Biological versus mineralogical chromium reduction: potential for reoxidation by manganese oxide.

    PubMed

    Butler, Elizabeth C; Chen, Lixia; Hansel, Colleen M; Krumholz, Lee R; Elwood Madden, Andrew S; Lan, Ying

    2015-11-01

    Hexavalent chromium (Cr(vi), present predominantly as CrO4(2-) in water at neutral pH) is a common ground water pollutant, and reductive immobilization is a frequent remediation alternative. The Cr(iii) that forms upon microbial or abiotic reduction often co-precipitates with naturally present or added iron (Fe), and the stability of the resulting Fe-Cr precipitate is a function of its mineral properties. In this study, Fe-Cr solids were formed by microbial Cr(vi) reduction using Desulfovibrio vulgaris strain RCH1 in the presence of the Fe-bearing minerals hematite, aluminum substituted goethite (Al-goethite), and nontronite (NAu-2, Clay Minerals Society), or by abiotic Cr(vi) reduction by dithionite reduced NAu-2 or iron sulfide (FeS). The properties of the resulting Fe-Cr solids and their behavior upon exposure to the oxidant manganese (Mn) oxide (birnessite) differed significantly. In microcosms containing strain RCH1 and hematite or Al-goethite, there was significant initial loss of Cr(vi) in a pattern consistent with adsorption, and significant Cr(vi) was found in the resulting solids. The solid formed when Cr(vi) was reduced by FeS contained a high proportion of Cr(iii) and was poorly crystalline. In microcosms with strain RCH1 and hematite, Cr precipitates appeared to be concentrated in organic biofilms. Reaction between birnessite and the abiotically formed Cr(iii) solids led to production of significant dissolved Cr(vi) compared to the no-birnessite controls. This pattern was not observed in the solids generated by microbial Cr(vi) reduction, possibly due to re-reduction of any Cr(vi) generated upon oxidation by birnessite by active bacteria or microbial enzymes. The results of this study suggest that Fe-Cr precipitates formed in groundwater remediation may remain stable only in the presence of active anaerobic microbial reduction. If exposed to environmentally common Mn oxides such as birnessite in the absence of microbial activity, there is the potential

  3. Ferromagnetism in chromium doped topological insulator thin films and nanoplate crystals

    NASA Astrophysics Data System (ADS)

    Chen, Zhiyi; Zhao, Lukas; Korzhovska, Inna; Deng, Haiming; Huang, Limin; Raoux, Simone; Jordan-Sweet, Jean; O'Brien, Stephen; Krusin-Elbaum, Lia

    2012-02-01

    The surface states of topological insulators are protected by time-reversal symmetry. Introducing magnetic impurities should break this symmetry and open a gap in the otherwise gapless surface states. Recent first-principle calculations predict that when topological insulators are doped with transition metal elements, such as Cr or Fe, a magnetically ordered insulating state will form -- a state that in thin (quasi-2D) samples may support a quantized Hall conductance. Here we report on electrical and magnetic characterization of thin Cr doped topological insulators: Sb2Te3 nanoplate crystals and ˜50 nm thin films of Bi2Te3. Electrical contacts to samples were lithographically defined, with rf sputtered films grown on pre-patterned substrates. Low-temperature in-plane resistivity, Hall, and magnetization measurements were performed in up to 5 T magnetic fields. For 5 at% Cr content, a distinct ferromagnetic hysteretic response is observed at temperatures below 10 K. Hysteretic loops, also observed in Hall resistivity, indicate low-T coercive fields of the order of 0.5 T. Correlation of transport and magnetic measurements indicating anomalous Hall effect, and strong dependence on dopant concentration and sample thickness will be presented.

  4. Quantitative analysis of trace chromium in blood samples. Combination of the advanced oxidation process with catalytic adsorptive stripping voltammetry.

    PubMed

    Yong, Li; Armstrong, Kristie C; Dansby-Sparks, Royce N; Carrington, Nathan A; Chambers, James Q; Xue, Zi-Ling

    2006-11-01

    A new method for pretreating blood samples for trace Cr analysis is described. The advanced oxidation process (AOP with H2O2 and 5.5-W UV irradiation for 60 min) is used to remove biological/organic species for subsequent analysis. Prior to the AOP pretreatment, acid (HNO3) is used at pH 3.0 to inhibit the enzyme catalase in the blood samples. Catalytic adsorptive stripping voltammetry at a bismuth film electrode gives a Cr concentration of 6.0 +/- 0.3 ppb in the blood samples. This concentration was confirmed by dry-ashing the blood samples and subsequent analysis by atomic absorption spectroscopy. This current method may be used to monitor chromium, a trace metal in humans, and the efficacy and safety of chromium supplements as adjuvant therapy for diabetes.

  5. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    NASA Astrophysics Data System (ADS)

    Coloma Ribera, R.; van de Kruijs, R. W. E.; Yakshin, A. E.; Bijkerk, F.

    2015-08-01

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO2 films were found to show Arrhenius behaviour. However, a gradual decrease in diffusion rates was observed with oxide growth, with the activation energy increasing from about 2.1 to 2.4 eV. Further exploration of the Arrhenius pre-exponential factor for diffusion process revealed that oxidation of polycrystalline ruthenium joins the class of materials that obey the Meyer-Neldel rule.

  6. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    SciTech Connect

    Coloma Ribera, R. Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F.

    2015-08-07

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO{sub 2} films were found to show Arrhenius behaviour. However, a gradual decrease in diffusion rates was observed with oxide growth, with the activation energy increasing from about 2.1 to 2.4 eV. Further exploration of the Arrhenius pre-exponential factor for diffusion process revealed that oxidation of polycrystalline ruthenium joins the class of materials that obey the Meyer-Neldel rule.

  7. Synergy between hexavalent chromium ions and TiO2 nanoparticles inside TUD-1 in the photocatalytic oxidation of propane, a spectroscopic study

    NASA Astrophysics Data System (ADS)

    Hamdy, Mohamed S.

    2016-02-01

    Siliceous TUD-1 mesoporous material was bi-functionalized by titanium dioxide nanoparticles and hexavalent chromium ions. The synthesis was carried out by one-pot procedure based on sol-gel technique. The photocatalytic performance of the prepared material was evaluated in the oxidation of propane under the illumination of ultraviolet light (wavelength = 360 nm) and monitored by in situ Fourier transform infrared spectroscopy. The photocatalytic activity of the prepared material exhibited an extra-ordinary activity than the reference samples that contain either hexavalent chromium ions or titanium dioxide nanoparticles only, confirming the true synergy between hexavalent chromium and tetravalent titanium ions of titanium dioxide nanoparticles.

  8. Effects of chromium and aluminum on mechanical and oxidation properties of iron-nickel-base superalloys based on CG-27

    NASA Technical Reports Server (NTRS)

    Schuon, S. R.

    1985-01-01

    The effects of chromium and aluminum on the mechanical and oxidation properties of a series of gamma-prime-strengthened alloys based on CG-27 were studied. Gamma-prime dispersion and solid-solution strengthening were the principal modes of alloy strengthening. The oxidation attack parameter K sub a decreased with increasing Cr and Al contents for each alloy group based on Al content. As a group, alloys with 3 wt % Al had the lowest attack parameters. Therefore, 3 wt % is the optimum level of Al for parabolic oxidation behavior. Spalling, due to diffusion-induced grain growth, was controlled by the overall Cr and Al levels. The alloy with 4 wt % Cr and 3 wt % Al had stress-rupture properties superior to those of the base alloy, CG-27, and maintained parabolic oxidation behavior while the Cr content was reduced by two-thirds of its value in cast CG-27.

  9. Phenolic sensor development based on chromium oxide-decorated carbon nanotubes for environmental safety.

    PubMed

    Rahman, Mohammed M; Balkhoyor, Hasan B; Asiri, Abdullah M

    2017-03-01

    A nanocomposite (NC) composed of chromium(III)oxide nanomaterials decorated carbon nanotubes (Cr2O3-CNT NC) was prepared via a simple solution method with reducing agents in an alkaline medium. The Cr2O3-CNT NC was characterized using ultraviolet-visible (UV/Vs.) spectroscopy, Fourier-transform infrared (FTIR) spectroscopy, energy-dispersive X-ray spectroscopy (XEDS), X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and field-emission scanning electron microscopy (FESEM). The Cr2O3-CNT composite was deposited on a flat glassy carbon electrode (GCE) with conducting nafion (5%) binders to produce a sensor that exhibited fast response and high selectivity toward 4-methoxyphenol (4MP) in phosphate buffer phase at pH 7. Furthermore, the sensor performance parameters, including the sensitivity, lower detection range, reliability, and reproducibility, ease of integration, long-term stability, and selectivity were investigated in detail. The calibration plot was found to be linear in the concentration range of 0.01 nM-0.1 μM. The sensitivity and detection limit were calculated as 1.4768 μA cm(-2) μM(-1) and 0.06428 ± 0.0002 nM (at a signal-to-noise ratio of 3), respectively. Thus, it was concluded that the proposed selective and efficient sensor represents a promising approach to effectively detect toxic phenolic compounds in the environment with acceptable and reliable results.

  10. Spectroscopic characterization of genotoxic chromium(V) peptide complexes: Oxidation of Chromium(III) triglycine, tetraglycine and pentaglycine complexes.

    PubMed

    Headlam, Henrietta A; Lay, Peter A

    2016-09-01

    Evidence is growing that metabolites of Cr(III) dietary supplements are partially oxidized to carcinogenic Cr(VI) and Cr(V) in vivo. Hence, we examined oxidations of Cr(III) peptide (triglycine, tetraglycine and pentaglycine) complexes to Cr(VI) and Cr(V) by PbO2 at 37°C and physiological pH values between 3.85 and 7.4. The products were characterized by EPR and UV/Vis spectroscopies and electrospray mass spectrometry. At pH3.85, the monomeric Cr(V) complexes produced were relatively unstable and degraded over min to hr under the acidic conditions. The triglycine and tetraglycine Cr(V) complexes had five-line (14)N-superhyperfine-coupled EPR signals; giso, (AN) values 1.9824 (2.44×10(-4)cm(-1)) and 1.9825 (2.43×10(-4)cm(-1)), respectively. The pentaglycine Cr(V) complex had a seven-line (14)N-superhyperfine-coupled EPR signal: giso=1.9844; AN=2.27×10(-4)cm(-1). In phosphate buffer (pH7.4 and 5.85), several Cr(V) intermediates were produced, but Cr(VI) was the end product. For the triglycine, tetraglycine and pentaglycine Cr(V) complexes, the giso (AN, 10(-4)cm(-1)) values were 1.9831 (2.17), 1.9843 (2.27) and 1.9844 (2.30), respectively. A second EPR signal with unresolved superhyperfine structure was observed at giso~1.966. At 1min, the tetraglycine and pentaglycine Cr(V) complexes, had another signal at giso~1.978, which decayed relative to the other signals with time. This chemistry has relevance to: (i) certain types of DNA damage produced by Cr carcinogens; (ii) the intracellular oxidation of Cr(III) to Cr(VI); and (iii) redox recycling of Cr(III) metabolites formed from both the intracellular reduction of carcinogenic Cr(VI) and from Cr(III) supplements.

  11. High temperature coefficient of resistance molybdenum oxide and nickel oxide thin films for microbolometer applications

    NASA Astrophysics Data System (ADS)

    Jin, Yao O.; John, David Saint; Podraza, Nikolas J.; Jackson, Thomas N.; Horn, Mark W.

    2015-03-01

    Molybdenum oxide (MoOx) and nickel oxide (NiOx) thin films were deposited by reactive biased target ion beam deposition. MoOx thin film resistivity varied from 3 to 2000 Ω.cm with a temperature coefficient of resistance (TCR) from -1.7% to -3.2%/K, and NiOx thin film resistivity varied from 1 to 300 Ω.cm with a TCR from -2.2% to -3.3%/K, both easily controlled by varying the oxygen partial pressure. Biased target ion beam deposited high TCR MoOx and NiOx thin films are polycrystalline semiconductors and have good stability in air. Compared with commonly used vanadium oxide thin films, MoOx or NiOx thin films offer improved process control for resistive temperature sensors.

  12. Lateral solid-phase epitaxy of oxide thin films on glass substrate seeded with oxide nanosheets.

    PubMed

    Taira, Kenji; Hirose, Yasushi; Nakao, Shoichiro; Yamada, Naoomi; Kogure, Toshihiro; Shibata, Tatsuo; Sasaki, Takayoshi; Hasegawa, Tetsuya

    2014-06-24

    We developed a technique to fabricate oxide thin films with uniaxially controlled crystallographic orientation and lateral size of more than micrometers on amorphous substrates. This technique is lateral solid-phase epitaxy, where epitaxial crystallization of amorphous precursor is seeded with ultrathin oxide nanosheets sparsely (≈10% coverage) deposited on the substrate. Transparent conducting Nb-doped anatase TiO2 thin films were fabricated on glass substrates by this technique. Perfect (001) orientation and large grains with lateral sizes up to 10 μm were confirmed by X-ray diffraction, atomic force microscopy, and electron beam backscattering diffraction measurements. As a consequence of these features, the obtained film exhibited excellent electrical transport properties comparable to those of epitaxial thin films on single-crystalline substrates. This technique is a versatile method for fabricating high-quality oxide thin films other than anatase TiO2 and would increase the possible applications of oxide-based thin film devices.

  13. Studies on optoelectronic properties of DC reactive magnetron sputtered chromium doped CdO thin films

    SciTech Connect

    Hymavathi, B. Rao, T. Subba; Kumar, B. Rajesh

    2014-10-15

    Cr doped CdO thin films were deposited on glass substrates by DC reactive magnetron sputtering method and subsequently annealed from 200 °C to 500 °C. X-ray diffraction analysis showed that the films exhibit (1 1 1) preferred orientation. The optical transmittance of the films increases from 64% to 88% with increasing annealing temperature. The optical band gap values were found to be decreased from 2.77 to 2.65 eV with the increase of annealing temperature. The decrease in optical band gap energy with increasing annealing temperature can be attributed to improvement in the crystallinity of the films and may also be due to quantum confinement effect. A minimum resistivity of 2.23 × 10{sup −4} Ω.cm and sheet resistance of 6.3 Ω/sq is obtained for Cr doped CdO film annealed at 500 °C.

  14. Characterization of reliability of printed indium tin oxide thin films.

    PubMed

    Hong, Sung-Jei; Kim, Jong-Woong; Jung, Seung-Boo

    2013-11-01

    Recently, decreasing the amount of indium (In) element in the indium tin oxide (ITO) used for transparent conductive oxide (TCO) thin film has become necessary for cost reduction. One possible approach to this problem is using printed ITO thin film instead of sputtered. Previous studies showed potential for printed ITO thin films as the TCO layer. However, nothing has been reported on the reliability of printed ITO thin films. Therefore, in this study, the reliability of printed ITO thin films was characterized. ITO nanoparticle ink was fabricated and printed onto a glass substrate followed by heating at 400 degrees C. After measurement of the initial values of sheet resistance and optical transmittance of the printed ITO thin films, their reliabilities were characterized with an isothermal-isohumidity test for 500 hours at 85 degrees C and 85% RH, a thermal shock test for 1,000 cycles between 125 degrees C and -40 degrees C, and a high temperature storage test for 500 hours at 125 degrees C. The same properties were investigated after the tests. Printed ITO thin films showed stable properties despite extremely thermal and humid conditions. Sheet resistances of the printed ITO thin films changed slightly from 435 omega/square to 735 omega/square 507 omega/square and 442 omega/square after the tests, respectively. Optical transmittances of the printed ITO thin films were slightly changed from 84.74% to 81.86%, 88.03% and 88.26% after the tests, respectively. These test results suggest the stability of printed ITO thin film despite extreme environments.

  15. Evolution of exchange interaction constants across magnetic phase transitions in the chromium spinel oxide CdCr2O4

    NASA Astrophysics Data System (ADS)

    Kimura, Shojiro; Sawada, Yuya; Narumi, Yasuo; Watanabe, Kazuo; Hagiwara, Masayuki; Kindo, Koichi; Ueda, Hiroaki

    2015-10-01

    High field electron spin resonance (ESR) and magnetization measurements reveal the crucial role of the strong spin-lattice coupling to generate the peculiar phase transitions in the chromium spinel oxide CdCr2O4 , which possesses a spin-driven Jahn-Teller transition and a field-induced 1/2-magnetization plateau state. From our analysis of the ESR modes and the spin wave dispersion, which was observed from the previous neutron scattering studies, these magnetic properties are shown to originate from the modifications of the exchange interactions due to the lattice distortions. The evaluated exchange constants are examined by the magnetoelastic theory proposed by Penc et al .

  16. Thin film passivation of laser generated 3D micro patterns in lithium manganese oxide cathodes

    NASA Astrophysics Data System (ADS)

    Pröll, J.; Kohler, R.; Bruns, M.; Oberst, V.; Weidler, P. G.; Heißler, S.; Kübel, C.; Scherer, T.; Prang, R.; Seifert, H. J.; Pfleging, W.

    2013-03-01

    The increasing need for long-life lithium-ion batteries requires the further development of electrode materials. Especially on the cathode side new materials or material composites are needed to increase the cycle lifetime. On the one hand, spinel-type lithium manganese oxide is a promising candidate to be used as cathode material due to its non-toxicity, low cost and good thermal stability. On the other hand, the spinel structure suffers from change in the oxidation state of manganese during cycling which is also accompanied by loss of active material into the liquid electrolyte. The general trend is to enhance the active surface area of the cathode in order to increase lithium-ion mobility through the electrode/electrolyte interface, while an enhanced surface area will also promote chemical degradation. In this work, laser microstructuring of lithium manganese oxide thin films was applied in a first step to increase the active surface area. This was done by using 248 nm excimer laser radiation and chromium/quartz mask imaging techniques. In a second step, high power diode laser-annealing operating at a wavelength of 940 nm was used for forming a cubic spinel-like battery phase. This was verified by means of Raman spectroscopy and cyclic voltammetric measurements. In a last step, the laser patterned thin films were coated with indium tin oxide (ITO) layers with a thickness of 10 nm to 50 nm. The influence of the 3D surface topography as well as the ITO thickness on the electrochemical performance was studied by cyclic voltammetry. Post-mortem studies were carried out by using scanning electron microscopy and focused ion beam analysis.

  17. Review of solution-processed oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Si Joon; Yoon, Seokhyun; Kim, Hyun Jae

    2014-02-01

    In this review, we summarize solution-processed oxide thin-film transistors (TFTs) researches based on our fulfillments. We describe the fundamental studies of precursor composition effects at the beginning in order to figure out the role of each component in oxide semiconductors, and then present low temperature process for the adoption of flexible devices. Moreover, channel engineering for high performance and reliability of solution-processed oxide TFTs and various coating methods: spin-coating, inkjet printing, and gravure printing are also presented. The last topic of this review is an overview of multi-functional solution-processed oxide TFTs for various applications such as photodetector, biosensor, and memory.

  18. Chromium (VI) induced oxidative stress in halotolerant alga Dunaliella salina and D. tertiolecta isolated from sambhar salt lake of Rajasthan (India).

    PubMed

    Arun, N; Vidyalaxmi; Singh, D P

    2014-12-24

    Chromium (Cr) is one of the most serious pollutants in aquatic systems. This study was performed to understand the effect of Cr (VI) on halophilic algal strains of D. salina and D. tertiolecta. The results revealed good tolerance of D. salina towards chromium (VI) up to 8 ppm concentration, whereas tolerance level in D. tertiolecta was up to 2 ppm concentration. Cr (VI) not only inhibited the growth of D. tertiolecta, but also showed increased inhibition in the level of photosynthetic pigments, protein and carbohydrate. Results have revealed that chromium (VI) induced higher increase in lipid peroxidation and H2O2 production in D. tertiolecta than the D. salina, particularly at higher concentration of chromium (VI). Chromium (VI) induced increase in the rate of RNO bleaching, loss of pigments and thiol (-SH) group was relatively higher in D. tertiolecta than the D. salina, which is indicating that D. tertiolecta was prone to Cr (VI) induced oxidative stress. Results on RNO bleaching in the presence of radical quenchers suggested that OH° radical played an important role in the chromium (VI)-induced general oxidative stress in D. tertiolecta.

  19. Multiferroic oxide thin films and heterostructures

    NASA Astrophysics Data System (ADS)

    Lu, Chengliang; Hu, Weijin; Tian, Yufeng; Wu, Tom

    2015-06-01

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  20. Multiferroic oxide thin films and heterostructures

    SciTech Connect

    Lu, Chengliang E-mail: Tao.Wu@kaust.edu.sa; Hu, Weijin; Wu, Tom E-mail: Tao.Wu@kaust.edu.sa; Tian, Yufeng

    2015-06-15

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  1. High quality transparent conducting oxide thin films

    DOEpatents

    Gessert, Timothy A.; Duenow, Joel N.; Barnes, Teresa; Coutts, Timothy J.

    2012-08-28

    A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm.sup.2/V-sec while simultaneously maintaining a high carrier density of .about.4.4e.times.10.sup.20 cm.sup.-3.

  2. Pro-oxidative vs antioxidative properties of ascorbic acid in chromium(VI)-induced damage: an in vivo and in vitro approach.

    PubMed

    Poljsak, B; Gazdag, Z; Jenko-Brinovec, S; Fujs, S; Pesti, M; Bélagyi, J; Plesnicar, S; Raspor, P

    2005-01-01

    The effect of antioxidant ascorbic acid (vitamin C) pretreatment on chromium(VI)-induced damage was investigated using the yeast Saccharomyces cerevisiae as a model organism. The objective of this study was to pretreat yeast cells with the antioxidant ascorbic acid in an effort to increase cell tolerance against reactive chromium intermediates and reactive oxygen species formed during chromium(VI) reduction. Intracellular oxidation was estimated using the fluorescence indicators dihidro-2,7-dichlorofluorescein, dihydroethidium and dihydrorhodamine 123. The role of ascorbic acid pretreatment on chromium(VI) toxicity was determined by measuring mitotic gene conversion, reverse mutations, 8-OHdG, hydroxyl radical, superoxide anion and chromium(V) formation. The chromium content in the biomass was determined by flame atomic absorption spectrometry. In the absence of chromium, ascorbic acid effectively protected the cells against endogenous reactive oxygen species formed during normal cellular metabolism. In vitro measurements employing EPR and the results of supercoiled DNA cleavage revealed that the pro-oxidative action of ascorbic acid during Cr(VI) reduction was concentration-dependent and that harmful hydroxyl radical and Cr(V) had formed following Cr(VI) reduction. However, the in vivo results highlighted the important role of increased cytosol reduction capacity related to modification of Cr(V) formation, increased chromium accumulation, better scavenging ability of superoxide anions and hydrogen peroxide, and consequently decreased cytotoxicity and genotoxicity in ascorbic acid pretreated cells. Ascorbic acid influenced Cr(VI) toxicity both as a reducing agent, by decreasing Cr(V) persistence, and as an antioxidant, by decreasing intracellular superoxide anion and hydrogen peroxide formation and by quenching free radicals formed during Cr(VI) to Cr(III) reduction. Increased 8-OHdG and decreased reduced glutathione in ascorbic acid-treated cells might induce an

  3. Comment on "Some Thermodynamic Aspects of the Oxides of Chromium" by A. Mittal, G.J. Albertsson, G.S. Gupta, S. Seetharaman, and S. Subramanian

    NASA Astrophysics Data System (ADS)

    Panda, Sourav Kumar; Jung, In-Ho

    2015-02-01

    In a recent publication, Mittal et al. tried to assess the stabilities of the chromium oxides at high temperature in order to understand the Cr hexavalent gas emission. For that, they compared the thermodynamic data of chromium oxides from two commercial databases, FactSage and Thermo-Calc, and NIST-JANAF Thermochemical Tables and found significant discrepancies between them. Apparently, some mistakes were being made in their study which led the present authors to re-evaluate their work and correct their analysis.

  4. Raman spectroscopic analysis of iron chromium oxide microspheres generated by nanosecond pulsed laser irradiation on stainless steel.

    PubMed

    Ortiz-Morales, M; Soto-Bernal, J J; Frausto-Reyes, C; Acosta-Ortiz, S E; Gonzalez-Mota, R; Rosales-Candelas, I

    2015-06-15

    Iron chromium oxide microspheres were generated by pulsed laser irradiation on the surface of two commercial samples of stainless steel at room temperature. An Ytterbium pulsed fiber laser was used for this purpose. Raman spectroscopy was used for the characterization of the microspheres, whose size was found to be about 0.2-1.7 μm, as revealed by SEM analysis. The laser irradiation on the surface of the stainless steel modified the composition of the microspheres generated, affecting the concentration of the main elemental components when laser power was increased. Furthermore, the peak ratio of the main bands in the Raman spectra has been associated to the concentration percentage of the main components of the samples, as revealed by Energy-Dispersive X-ray Spectroscopy (EDS) analysis. These experiments showed that it is possible to generate iron chromium oxide microspheres on stainless steel by laser irradiation and that the concentration percentage of their main components is associated with the laser power applied.

  5. Effect of oxidation heat treatment on the bond strength between a ceramic and cast and milled cobalt-chromium alloys.

    PubMed

    Li, Jieyin; Ye, Xiuhua; Li, Bohua; Liao, Juankun; Zhuang, Peilin; Ye, Jiantao

    2015-08-01

    There is a dearth of dental scientific literature on the effect of different oxidation heat treatments (OHTs) (as surface pretreatments) on the bonding performance of cast and milled cobalt-chromium (CoCr) alloys. The objective of this study was to evaluate the effect of different OHTs on the bond strength between a ceramic and cast and milled CoCr alloys. Cobalt-chromium metallic specimens were prepared using either a cast or a milled method. Specimens were subjected to four different OHT methods: without OHT; OHT under normal atmospheric pressure; OHT under vacuum; and OHT under vacuum followed by sandblasting. The metal-ceramic bond strength was evaluated using a three-point bending test according to ISO9693. Scanning electron microscopy and energy-dispersive spectroscopy were used to study the specimens' microstructure and elemental composition. The bond strength was not affected by the CoCr manufacturing method. Oxidation heat treatment performed under normal atmospheric pressure resulted in the highest bond strength. The concentration of oxygen on the alloy surfaces varied with the different pretreatment methods in the following order: OHT under normal atmospheric pressure > OHT under vacuum > without OHT ≈ OHT under vacuum followed by sandblasting.

  6. High glucose and ketosis (acetoacetate) increases, and chromium niacinate decreases, IL-6, IL-8, and MCP-1 secretion and oxidative stress in U937 monocytes.

    PubMed

    Jain, Sushil K; Rains, Justin L; Croad, Jennifer L

    2007-10-01

    Elevated blood levels of the proinflammatory cytokines interleukin-6 (IL-6), interleukin-8 (IL-8), and MCP-1 (monocyte chemoattractant protein-1) increase insulin resistance and the risk of cardiovascular disease (CVD). There is no previous study that has examined the effect of ketosis and trivalent chromium on IL-6, IL-8, or MCP-1 secretion in any cell type or in human or animal model. The authors examined the hypothesis that ketosis increases and trivalent chromium decreases the levels of cytokines and oxidative stress in diabetes using a U937 monocyte cell culture model. Cells were cultured with control, high glucose (HG), and acetoacetate (AA) in the absence or presence (0.5-10 microM) of CrCl(3), chromium picolinate (Cr-P), or chromium niacinate (Cr-N) at 37 degrees C for 24 h. The data show a significant stimulation of IL-6, IL-8, and MCP-1 secretion and an increase in oxidative stress in cells treated with HG or AA. The effect of HG on cytokine secretion was reduced by Cr-N, and to a lesser extent by CrCl(3) and Cr-P. The effect of HG on oxidative stress was reduced by Cr-N and CrCl 3, but not by Cr-P. Similarly, Cr-N decreased the cytokine secretion in HG + AA-treated cells. Cr-N significantly decreased standard oxidant (H(2)O(2)) induced cytokine secretion, which suggests that reduction of cytokine secretion by Cr-N is in part mediated by its antioxidative effect. In a cell culture model, Cr-N appears to be the most effective form of chromium in inhibiting oxidative stress and proinflammatory cytokine secretion by monocytes. This study suggests that chromium niacinate supplementation may be useful in reducing vascular inflammation and the risk of CVD in diabetes.

  7. Zinc Oxide Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Fortunato, E.; Barquinha, P.; Pimentel, A.; Gonçalves, A.; Marques, A.; Pereira, L.; Martins, R.

    ZnO thin film transistors (ZnO-TFT) have been fabricated by rf magnetron sputtering at room temperature with a bottom-gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 21 V, a field effect mobility of 20 cm2/Vs, a gate voltage swing of 1.24 V/decade and an on/off ratio of 2×105. The ZnO-TFT present an average optical transmission (including the glass substrate) of 80 % in the visible part of the spectrum. The combination of transparency, high channel mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of invisible and flexible electronics. Moreover, the processing technology used to fabricate this device is relatively simple and it is compatible with inexpensive plastic/flexible substrate technology.

  8. Ln polyoxocations: yttrium oxide solution speciation & solution deposited thin films.

    PubMed

    Marsh, David A; Goberna-Ferrón, Sara; Baumeister, Mary K; Zakharov, Lev N; Nyman, May; Johnson, Darren W

    2017-01-17

    Rare earth oxide materials, including thin film coatings, are critically important in magnetic, luminescent and microelectric devices, and few substitutes have been discovered with comparable performance. Thin film coatings from solution are almost unknown for rare earth oxides, likely due to their high activity towards hydrolysis which yields poor quality thin films. The hexamer [Ln6(O)(OH)8(H2O)12(NO3)6](2+) is a rare example of a metal-oxo cluster isolated and stabilized without additional supporting organic ligands. Herein we report a new method for both the preparation and stabilization in non-aqueous media, which makes these clusters valuable precursors for solution-processed thin films. Solution characterization (NMR, small-angle X-ray scattering and Raman spectroscopy) in wet organic solvents indicated that the clusters evolve via a fragmentation and reaggregation process. This is especially true for hexamers of the smaller Ln(3+)-ions: the higher charge density yields higher hydration rates. This process produced an entirely new hexadecameric cluster formulated Y16O3(OH)24(NO3)18(OSMe2)16(OCMe2)2(H2O)4. The new structure represents an intermediate hydrolysis product on the pathway from hexanuclear clusters to metal oxyhydroxide bulk solid. DMSO solvent ligands displace aqua ligands on the cluster and likely explain the additional stability observed for these clusters in organic solvents. The enhanced cluster stability in DMF and DMSO also enables solution-processing methods to create high quality thin films.

  9. Altering properties of cerium oxide thin films by Rh doping

    SciTech Connect

    Ševčíková, Klára; Nehasil, Václav; Vorokhta, Mykhailo; Haviar, Stanislav; Matolín, Vladimír; and others

    2015-07-15

    Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO{sub x} thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO{sub x} thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce{sup 4+} and Ce{sup 3+} and rhodium occurs in two oxidation states, Rh{sup 3+} and Rh{sup n+}. We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO{sub x} thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO{sub x} thin films leads to preparing materials with different properties.

  10. Oxidative Stress and Antimicrobial Activity of Chromium(III) and Ruthenium(II) Complexes on Staphylococcus aureus and Escherichia coli

    PubMed Central

    Páez, Paulina L.; Bazán, Claudia M.; Bongiovanni, María E.; Toneatto, Judith; Albesa, Inés; Becerra, María C.; Argüello, Gerardo A.

    2013-01-01

    The prevalence of antibiotic resistance has resulted in the need for new approaches to be developed to combat previously easily treatable infections. The main aim of this work was to establish the potential of the synthetic α-diimine chromium(III) and ruthenium(II) complexes (where the α-diimine ligands are bpy = 2,2-bipyridine, phen = 1,10-phenanthroline, and dppz = dipyrido[3,2-a:2′,3′-c]-phenazine) like [Cr(phen)3]3+, [Cr(phen)2(dppz)]3+, [Ru(phen)3]2+, and [Ru(bpy)3]2+ as antibacterial agents by generating oxidative stress. The [Cr(phen)3]3+ and [Cr(phen)2(dppz)]3+ complexes showed activity against Gram positive and Gram negative bacteria with minimum inhibitory concentrations (MICs) ranging from 0.125 μg/mL to 1 μg/mL, while [Ru(phen)3]2+ and [Ru(bpy)3]2+ do not exhibit antimicrobial activity against the two bacterial genera studied at the concentration range used. When ciprofloxacin was combined with [Cr(phen)3]3+ for the inhibition of Staphylococcus aureus and Escherichia coli, an important synergistic effect was observed, FIC 0.066 for S. aureus and FIC 0.064 for E. coli. The work described here shows that chromium(III) complexes are bactericidal for S. aureus and E. coli. Our results indicate that α-diimine chromium(III) complexes may be interesting to open new paths for metallodrug chemotherapy against different bacterial genera since some of these complexes have been found to exhibit remarkable antibacterial activities. PMID:24093107

  11. Synthesis, characterization, and crystal structures of uranyl compounds containing mixed chromium oxidation states

    SciTech Connect

    Unruh, Daniel K.; Quicksall, Andrew; Pressprich, Laura; Stoffer, Megan; Qiu, Jie; Nuzhdin, Kirill; Wu, Weiqiang; Vyushkova, Mariya; Burns, Peter C.

    2012-07-15

    The mixed-valence chromium uranyl compounds Li{sub 5}[(UO{sub 2}){sub 4}(Cr(V)O{sub 5})(Cr(VI)O{sub 4}){sub 4}](H{sub 2}O){sub 17} (1), (Mg(H{sub 2}O){sub 6}){sub 5}[(UO{sub 2}){sub 8}(Cr(V)O{sub 5}){sub 2}(Cr(VI)O{sub 4}){sub 8}] (2) and (NH{sub 4}){sub 5}[(UO{sub 2}){sub 4}(Cr(V)O{sub 5})(Cr(VI)O{sub 4}){sub 2}]H{sub 2}O{sub 11} (3) have been synthesized and characterized. Each contains an identical sheet of cation-centered polyhedra. Central to the connectivity of the sheet are four uranyl pentagonal bipyramids that share some of their equatorial vertices, giving a four-membered ring. The Cr(V) cation located near the center of this ring is coordinated by O atoms in a square pyramidal arrangement. The Cr(VI) is tetrahedrally coordinated by O atoms, and these tetrahedra link the four-membered rings of bipyramids. The mixed-valence nature of the sheet was verified by XANES, an EPR spectrum, and bond-valence analysis. Low-valence cations and H{sub 2}O groups reside between the sheets of uranyl and chromate polyhedra, where they provide linkages between adjacent sheets. - Graphical abstract: Three uranyl chromate compounds contain both pentavalent and hexavalent chromium. The unusual topology of the uranyl chromate sheet contains unusual pentavalent chromium in a square pyramidal coordination environment. Highlights: Black-Right-Pointing-Pointer The first uranyl compounds with mixed Cr valences are reported. Black-Right-Pointing-Pointer A sheet of uranyl polyhedra stabilizes pentavalent chromium. Black-Right-Pointing-Pointer Uranyl and chromate polyhedra form a topologically novel sheet.

  12. Reaction of CO2 with propylene oxide and styrene oxide catalyzed by a chromium(III) amine-bis(phenolate) complex.

    PubMed

    Dean, Rebecca K; Devaine-Pressing, Katalin; Dawe, Louise N; Kozak, Christopher M

    2013-07-07

    A diamine-bis(phenolate) chromium(III) complex, {CrCl[O2NN'](BuBu)}2 catalyzes the copolymerization of propylene oxide with carbon dioxide. The synthesis of this metal complex is straightforward and it can be obtained in high yields. This catalyst incorporates a tripodal amine-bis(phenolate) ligand, which differs from the salen or salan ligands typically used with Cr and Co complexes that have been employed as catalysts for the synthesis of such polycarbonates. The catalyst reported herein yields low molecular weight polymers with narrow polydispersities when the reaction is performed at room temperature. Performing the reaction at elevated temperatures causes the selective synthesis of propylene carbonate. The copolymerization activity for propylene oxide and carbon dioxide, as well as the coupling of carbon dioxide and styrene oxide to give styrene carbonate are presented.

  13. Thin film zinc oxide deposited by CVD and PVD

    NASA Astrophysics Data System (ADS)

    Hamelmann, Frank U.

    2016-10-01

    Zinc oxide is known as a mineral since 1810, but it came to scientific interest after its optoelectronic properties found to be tuneable by p-type doping. Since the late 1980’s the number of publications increased exponentially. All thin film deposition technologies, including sol-gel and spray pyrolysis, are able to produce ZnO films. However, for outstanding properties and specific doping, only chemical vapor deposition and physical vapor deposition have shown so far satisfying results in terms of high conductivity and high transparency. In this paper the different possibilities for doping will be discussed, some important applications of doped ZnO thin films will be presented. The deposition technologies used for industrial applications are shown in this paper. Especially sputtering of aluminium doped Zinc Oxide (ZnO:Al or AZO) and LPCVD of boron doped Zinc Oxide (ZnO:B or BZO) are used for the commercial production of transparent conductive oxide films on glass used for thin film photovoltaic cells. For this special application the typical process development for large area deposition is presented, with the important trade-off between optical properties (transparency and ability for light scattering) and electrical properties (conductivity). Also, the long term stability of doped ZnO films is important for applications, humidity in the ambient is often the reason for degradation of the films. The differences between the mentioned materials are presented.

  14. Nanostructured copper, chromium, and tin oxide multicomponent materials as catalysts for methanol decomposition: 11C-radiolabeling study.

    PubMed

    Tsoncheva, Tanya; Sarkadi-Priboczki, Eva; Dimitrov, Momtchil; Genova, Izabela

    2013-01-01

    Copper and chromium modified tin oxide nanocomposites were obtained via incipient wetness impregnation of high surface area nanosized SnO(2) with the corresponding metal acetylacetonates and their further decomposition in air. Powder X-ray diffraction (XRD), Nitrogen physisorption, UV-Vis, and Temperature-programmed reduction (TPR) with hydrogen were applied for the samples characterization. The catalytic activity of the obtained materials was tested in methanol conversion. A new approach based on the selective coverage of the surface with (11)C-methanol was used for the characterization of the catalytic sites. It was demonstrated that the products distribution could be controlled by the surface coverage with methanol and the role of different active sites was discussed. The modification of SnO(2) with copper oxide increased the activity in methanol decomposition to CO(2)via dioxymethylene intermediates, but the catalyst suffered considerable loss of activity due to the reduction transformations by the reaction medium and formation of an inactive intermetallic alloy. The modification with chromium changed the acid-basic properties of SnO(2) by the formation of Cr(2)O(3) nanoparticles as well as anchored to the support chromate species. The former particles facilitated the formation of dimethyl ether (DME), while the latter species converted methanol predominantly to hydrocarbons. The fraction of chromate species increased in Cu-Cr-Sn oxide multicomponent nanocomposites and promoted the formation of hydrocarbons over DME at low temperatures, while at higher temperatures, the activity of the copper species leading to CO(2) formation was more pronounced.

  15. Reactive pulsed magnetron-sputtered tantalum oxide thin films

    NASA Astrophysics Data System (ADS)

    Nielsen, Matthew Christian

    Current high speed, advanced packaging applications require the use of integrated capacitors. Tantalum oxide is one material currently being considered for use in the capacitors; however, the deposition technique used to make the thin film dielectric can alter its performance. Pulsed magnetron reactive sputtering was investigated in this thesis as it offers a robust, clean, and low temperature deposition alternative. This is a new deposition technique created to control the negative effects of target poisoning; however, to understand the relationships between the deposition variables and the resultant film properties a thorough investigation is needed. The instantaneous voltage at the target was captured using a high speed digital oscilloscope. Three target oxidation states were imaged and identified to be that of the metallic and oxidized states with an abrupt transition region separating the two. Using high resolution X-ray photoelectron spectroscopy the bonding present in the deposited films was correlated to the oxidation state of the target. While operating the target in the metallic mode, a mix of oxidized, sub-oxide and metallic states were discovered. Alternatively, the bonding present in the films deposited when the target was in the oxidized state were that of fully oxidized tantalum pentoxide. The films deposited above the critical partial pressure demonstrated excellent leakage current densities. The exact magnitude of the leakage current density inversely scaled to the relative amount of oxygen included into the sputtering atmosphere. Detailed plot analysis showed that there were two different conduction mechanisms controlling the current flow in the capacitors. High frequency test vehicles were measured up to 10 GHz in order to determine the frequency response of the dielectric material. A circuit equivalent model describing the testing system and samples was created and utilized to fit the collected data. Overall, the technique of pulsed magnetron

  16. Nitrogen doped zinc oxide thin film

    SciTech Connect

    Li, Sonny Xiao-zhe

    2003-01-01

    To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introduced into the films by reactive sputtering in an NO2 plasma or by N+ implantation. All ZnO films grown show n-type conductivity. In unintentionally doped ZnO films, the n-type conductivities are attributed to Zni, a native shallow donor. In NO2-grown ZnO films, the n-type conductivity is attributed to (N2)O, a shallow double donor. In NO2-grown ZnO films, 0.3 atomic % nitrogen was found to exist in the form of N2O and N2. Upon annealing, N2O decomposes into N2 and O2. In furnace-annealed samples N2 redistributes diffusively and forms gaseous N2 bubbles in the films. Unintentionally doped ZnO films were grown at different oxygen partial pressures. Zni was found to form even at oxygen-rich condition and led to n-type conductivity. N+ implantation into unintentionally doped ZnO film deteriorates the crystallinity and optical properties and leads to higher electron concentration. The free electrons in the implanted films are attributed to the defects introduced by implantation and formation of (N2)O and Zni. Although today there is still no reliable means to produce good quality, stable p-type ZnO material, ZnO remains an attractive material with potential for high performance short wavelength optoelectronic devices. One may argue that gallium nitride was in a similar situation a decade ago. Although we did not obtain any p-type conductivity, we hope our research will provide a valuable reference to the literature.

  17. Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films grown by atomic layer deposition

    SciTech Connect

    Tamm, Aile Kozlova, Jekaterina; Aarik, Lauri; Aarik, Jaan; Kukli, Kaupo; Link, Joosep; Stern, Raivo

    2015-01-15

    Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films were grown by atomic layer deposition on silicon substrates. For depositing dysprosium and titanium oxides Dy(thd){sub 3}-O{sub 3} and TiCl{sub 4}-O{sub 3} were used as precursors combinations. Appropriate parameters for Dy(thd){sub 3}-O{sub 3} growth process were obtained by using a quartz crystal microbalance system. The Dy{sub 2}O{sub 3} films were deposited on planar substrates and on three-dimensional substrates with aspect ratio 1:20. The Dy/Ti ratio of Dy{sub 2}O{sub 3}-doped TiO{sub 2} films deposited on a planar silicon substrate ranged from 0.04 to 0.06. Magnetometry studies revealed that saturation of magnetization could not be observed in planar Dy{sub 2}O{sub 3} films, but it was observable in Dy{sub 2}O{sub 3} films on 3D substrates and in doped TiO{sub 2} films with a Dy/Ti atomic ratio of 0.06. The latter films exhibited saturation magnetization 10{sup −6} A cm{sup 2} and coercivity 11 kA/m at room temperature.

  18. Anisotropic thermal conductivity of thin polycrystalline oxide samples

    SciTech Connect

    Tiwari, A.; Boussois, K.; Nait-Ali, B.; Smith, D. S.; Blanchart, P.

    2013-11-15

    This paper reports about the development of a modified laser-flash technique and relation to measure the in-plane thermal diffusivity of thin polycrystalline oxide samples. Thermal conductivity is then calculated with the product of diffusivity, specific heat and density. Design and operating features for evaluating in-plane thermal conductivities are described. The technique is advantageous as thin samples are not glued together to measure in-plane thermal conductivities like earlier methods reported in literature. The approach was employed to study anisotropic thermal conductivity in alumina sheet, textured kaolin ceramics and montmorillonite. Since it is rare to find in-plane thermal conductivity values for such anisotropic thin samples in literature, this technique offers a useful variant to existing techniques.

  19. Review paper: Transparent amorphous oxide semiconductor thin film transistor

    NASA Astrophysics Data System (ADS)

    Kwon, Jang-Yeon; Lee, Do-Joong; Kim, Ki-Bum

    2011-03-01

    Thin film transistors (TFTs) with oxide semiconductors have drawn great attention in the last few years, especially for large area electronic applications, such as high resolution active matrix liquid crystal displays (AMLCDs) and active matrix organic light-emitting diodes (AMOLEDs), because of their high electron mobility and spatial uniform property. This paper reviews and summarizes recent emerging reports that include potential applications, oxide semiconductor materials, and the impact of the fabrication process on electrical performance. We also address the stability behavior of such devices under bias/illumination stress and critical factors related to reliability, such as the gate insulator, the ambient and the device structure.

  20. Growth control of the oxidation state in vanadium oxide thin films

    SciTech Connect

    Lee, Shinbuhm; Meyer, Tricia L.; Lee, Ho Nyung; Park, Sungkyun; Egami, Takeshi

    2014-12-01

    Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research but also technological applications that utilize the subtle change in the physical properties originating from the metal-insulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase pure epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V{sub 2}{sup +3}O{sub 3}, V{sup +4}O{sub 2}, and V{sub 2}{sup +5}O{sub 5}. A well pronounced MIT was only observed in VO{sub 2} films grown in a very narrow range of oxygen partial pressure P(O{sub 2}). The films grown either in lower (<10 mTorr) or higher P(O{sub 2}) (>25 mTorr) result in V{sub 2}O{sub 3} and V{sub 2}O{sub 5} phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO{sub 2} thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an improved MIT behavior.

  1. Growth control of the oxidation state in vanadium oxide thin films

    SciTech Connect

    Lee, Shinbuhm; Meyer, Tricia L.; Park, Sungkyun; Lee, Ho Nyung

    2014-12-05

    Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical properties originating from the metalinsulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase pure epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V₂⁺²O₃, V⁺⁴O₂, and V₂⁺⁵O₅. A well pronounced MIT was only observed in VO₂ films grown in a very narrow range of oxygen partial pressure P(O₂). The films grown either in lower (< 10 mTorr) or higher P(O₂) (> 25 mTorr) result in V₂O₃ and V₂O₅ phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO₂ thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an 3 improved MIT behavior.

  2. Growth control of the oxidation state in vanadium oxide thin films

    NASA Astrophysics Data System (ADS)

    Lee, Shinbuhm; Meyer, Tricia L.; Park, Sungkyun; Egami, Takeshi; Lee, Ho Nyung

    2014-12-01

    Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research but also technological applications that utilize the subtle change in the physical properties originating from the metal-insulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase pure epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V2 + 3 O 3 , V + 4 O 2 , and V2 + 5 O 5 . A well pronounced MIT was only observed in VO2 films grown in a very narrow range of oxygen partial pressure P(O2). The films grown either in lower (<10 mTorr) or higher P(O2) (>25 mTorr) result in V2O3 and V2O5 phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO2 thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an improved MIT behavior.

  3. Growth control of the oxidation state in vanadium oxide thin films

    DOE PAGES

    Lee, Shinbuhm; Meyer, Tricia L.; Park, Sungkyun; ...

    2014-12-05

    Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical properties originating from the metalinsulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase puremore » epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V₂⁺²O₃, V⁺⁴O₂, and V₂⁺⁵O₅. A well pronounced MIT was only observed in VO₂ films grown in a very narrow range of oxygen partial pressure P(O₂). The films grown either in lower (< 10 mTorr) or higher P(O₂) (> 25 mTorr) result in V₂O₃ and V₂O₅ phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO₂ thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an 3 improved MIT behavior.« less

  4. Environmentally Responsible Redox Chemistry: An Example of Convenient Oxidation Methodology without Chromium Waste

    ERIC Educational Resources Information Center

    Crumbie, Robyn L.

    2006-01-01

    The reactions use recyclable Magtrieve as the oxidant in a simple reaction sequence illustrating the reciprocity of oxidation and reduction processes. The reciprocity of oxidation and reduction reactions are explored while undertaking the reactions in an environmentally friendly manner.

  5. Application of Fe-Cu binary oxide nanoparticles for the removal of hexavalent chromium from aqueous solution.

    PubMed

    Khan, Saif Ullah; Zaidi, Rumman; Hassan, Saeikh Z; Farooqi, I H; Azam, Ameer

    2016-01-01

    The adsorption process has been used as an effective technique for the removal of metal ions from aqueous solutions. Groundwater remediation by nanoparticles has received interest in recent years. In the present study, a binary metal oxide of Fe-Cu was prepared and used for the removal of hexavalent chromium from aqueous solution. Batch experiments were performed to investigate the effects of initial Cr (VI) concentration, dose of adsorbent, and pH of solution on the removal efficiency of Cr (VI). The prepared nanostructured Fe-Cu binary oxides were able to reduce the concentration of Cr (VI) in aqueous solution. Binary metal oxides nanoparticle exhibited an outstanding ability to remove Cr (VI) due to high surface area, low particle size, and high inherent activity. The percentage removal efficiency of Cr (VI) increased with nanoparticles doses (0.1 g L(-1)-2.5 g L(-1)), whereas it decreased with initial Cr (VI) concentration (1 mg L(-1)-25 mg L(-1)) and with pH (3-9). The Freundlich model was found to be the better fit for adsorption isotherm. The prepared nanomaterial was characterized using powder X-ray diffraction, scanning electron microscopy (SEM), and ultraviolet (UV)-visible spectroscopy. It showed that the Fe-Cu binary oxides were formed in single phase. SEM micrograph showed aggregates with many nano-sized particles. UV-visible spectroscopy showed quantum confinement effect.

  6. Investigation of iron-chromium-niobium-titanium ferritic stainless steel for solid oxide fuel cell interconnect applications

    NASA Astrophysics Data System (ADS)

    Yang, Zhenguo; Xia, Guan-Guang; Wang, Chong-Min; Nie, Zimin; Templeton, Joshua; Stevenson, Jeffry W.; Singh, Prabhakar

    As part of an effort to develop cost-effective ferritic stainless steel-based interconnects for solid oxide fuel cell (SOFC) stacks, both bare AISI441 and AISI441 coated with (Mn,Co) 3O 4 protection layers were studied in terms of its metallurgical characteristics, oxidation behavior, and electrical performance. The addition of minor alloying elements, in particular Nb, led to formation of Laves phases both inside grains and along grain boundaries. In particular, the Laves phase which precipitated out along grain boundaries during exposure at intermediate SOFC operating temperatures was found to be rich in both Nb and Si. The capture of Si in the Laves phase minimized the Si activity in the alloy matrix and prevented formation of an insulating silica layer at the scale/metal interface, resulting in a reduction in area-specific electrical resistance (ASR). However, the relatively high oxidation rate of the steel, which leads to increasing ASR over time, and the need to prevent volatilization of chromium from the steel necessitates the application of a conductive protection layer on the steel. In particular, the application of a Mn 1.5Co 1.5O 4 spinel protection layer substantially improved the electrical performance of the 441 by reducing the oxidation rate.

  7. Oxidation of Light Alkanes Using Photocatalytic Thin Films

    DTIC Science & Technology

    2006-01-01

    Transformation of the TiO2 from anatase to the rutile crystalline phase was also delayed in the mixed oxides leading to a photocatalyst with higher...at room temperature using a WO3 / TiO2 binary system compared to plain TiO2 . Improvements in the photocatalytic activity were attributed to more... TiO2 thin film photocatalyst . It was observed that efficient reactor design requires optimization of catalyst packing to minimize bypass of the

  8. Structure, magnetism, and dissociation energy of small bimetallic cobalt-chromium oxide cluster cations: A density-functional-theory study

    NASA Astrophysics Data System (ADS)

    Pham, Hung Tan; Cuong, Ngo Tuan; Tam, Nguyen Minh; Lam, Vu Dinh; Tung, Nguyen Thanh

    2016-01-01

    We study CoxCryOm+ (x + y = 2, 3 and 1 ≤ m ≤ 4) clusters by means of density-functional-theory calculations. It is found that the clusters grow preferentially through maximizing the number of metal-oxygen bonds with a favor on Cr sites. The size- and composition-dependent magnetic behavior is discussed in relation with the local atomic magnetic moments. While doped species show an oscillatory magnetic behavior, the total magnetic moment of pure cobalt and chromium oxide clusters tends to enhance or reduce as increasing the oxygen content, respectively. The dissociation energies for different evaporation channels are also calculated to suggest the stable patterns, as fingerprints for future photofragmentation experiments.

  9. The effect of chromium oxide on the properties of simulated nuclear waste glasses

    SciTech Connect

    Vojtech, O.; Sussmilch, J.; Urbanec, Z.

    1996-02-01

    A study of the effect of chromium on the properties of selected glasses was performed in the frame of a Contract between Battelle, Pacific Northwest Laboratories and Nuclear Research Institute, ReZ. In the period from July 1994 to June 1995 two borosilicate glasses of special composition were prepared according to the PNL procedure and their physical and structural characteristics of glasses were studied. This Final Report contains a vast documentation on the properties of all glasses studied. For the preparation of the respective technology more detailed study of physico-chemical properties and crystallinity of investigated systems would be desirable.

  10. Electrical properties of vanadium tungsten oxide thin films

    SciTech Connect

    Nam, Sung-Pill; Noh, Hyun-Ji; Lee, Sung-Gap; Lee, Young-Hie

    2010-03-15

    The vanadium tungsten oxide thin films deposited on Pt/Ti/SiO{sub 2}/Si substrates by RF sputtering exhibited good TCR and dielectric properties. The dependence of crystallization and electrical properties are related to the grain size of V{sub 1.85}W{sub 0.15}O{sub 5} thin films with different annealing temperatures. It was found that the dielectric properties and TCR properties of V{sub 1.85}W{sub 0.15}O{sub 5} thin films were strongly dependent upon the annealing temperature. The dielectric constants of the V{sub 1.85}W{sub 0.15}O{sub 5} thin films annealed at 400 {sup o}C were 44, with a dielectric loss of 0.83%. The TCR values of the V{sub 1.85}W{sub 0.15}O{sub 5} thin films annealed at 400 {sup o}C were about -3.45%/K.

  11. Nanostructured thin solid oxide fuel cells with high power density.

    PubMed

    Ignatiev, Alex; Chen, Xin; Wu, Naijuan; Lu, Zigui; Smith, Laverne

    2008-10-28

    Nanostructured thin film solid oxide fuel cells (SOFC) have been developed for reduced temperature operation, with high power density, and to be self reforming. A thin film electrolyte (1-2 microm thickness), e.g., yttria-stabilized zirconia (YSZ), is deposited on a nickel foil substrate. The electrolyte thin film is polycrystalline when deposited on a polycrystalline nickel foil substrate, and is (100) textured when deposited on an atomically textured nickel foil substrate. The Ni foil substrate is then converted into a porous SOFC anode by photolithographic patterning and etching to develop porosity. A composite La(0.5)Sr(0.5)CoO(3) cathode is then deposited on the thin film electrolyte. The resultant thin film hetero structure fuel cells have operated at a significantly reduced temperature: as low as 470 degrees C, with a maximum power density of 140 mW cm(-2) at 575 degrees C, and an efficiency of >50%. This drastic reduction in operating temperature for an SOFC now also allows for the use of hydrocarbon fuels without the need for a separate reformer as the nickel anode effectively dissociates hydrocarbons within this temperature range. These nanostructured fuel cells show excellent potential for high power density, small volume, high efficiency fuel cells for power generation applications.

  12. Oxidation Temperature Effects on ZnO Thin Films Prepared from Zn Thin Films on Quartz Substrates.

    PubMed

    Park, Seonhee; Kim, Younggyu; Leem, Jae-Young

    2015-11-01

    We investigated the structural and optical properties of the ZnO thin films formed by oxidation of Zn thin films. Zn thin films were deposited by thermal evaporation and were then annealed from 300 to 800 degrees C to prepare ZnO thin films. We found that ZnO thin films were formed by thermal oxidation of Zn thin films at oxidation temperatures over 400 degrees C. The grain size of ZnO thin films increased with the oxidation temperature and the highest ZnO (002) intensity was obtained at 600 degrees C. In the PL spectra, the intensity of the near-band-edge peak increased with the oxidation temperatures until 400 degrees C. However, these values gradually decreased with a further increase in the oxidation temperatures over 400 degrees C. The transmittance of the ZnO thin films was more than 90% for the visible wavelength region, and the optical band gap was red-shifted with increase in the oxidation temperature.

  13. The synthesis and characterization of multifunctional oxide thin films

    NASA Astrophysics Data System (ADS)

    Kharel, Parashu Ram

    2008-10-01

    Multifunctional materials offer a number of very interesting properties for developing new generation novel devices. Motivated by this fact, we concentrated our research efforts on investigating two different class of multifunctional materials namely: Diluted Magnetic Semiconducting Oxides (DMSO) and Multiferroic Oxides. The primary goal of this study was to determine how to resolve the controversy concerning the origin of room temperature ferromagnetic order in DMSO and to demonstrate the theoretically predicted coupling between ferroelectric and magnetic order parameters in multiferroic oxides. We chose several materials of current interest such as TiO2, ZnOand In2O3 (DMSO) and Ni3V2O8 and BiFeO 3 (multiferroic oxides) as the experimental specimens. We synthesized thin film samples of these materials using metal organic decomposition by spin coating and RF magnetron sputtering techniques. We succeeded in growing single phase polycrystalline thin films using both of the techniques with the sputter deposited samples showing highly preferred orientations. We did not observe any secondary phases and accidental impurities leading to robust ferromagnetic order in our samples within the detection limit of XRD, Raman spectroscopy and TEM. We have demonstrated that the lattice defects such as oxygen vacancies and cation vacancies play crucial role in the development of ferromagnetic order in DMSO materials. Based on the investigation carried out on TiO 2, ZnO and In2O3, we conclude that ferromagnetism can be developed in oxygen deficient DMSO thin films without the subbstitution of any external magnetic impurities but the incorporation of magnetic impurities may help in stabilizing the observed ferromagnetic order. Most importantly, we demonstrated with the direct measurement of spin polarization in In 2O3 and Cr doped In2O3 thin films that the charge carriers responsible for the ferromagnetic order are spin polarized. We have successfully demonstrated that the low

  14. Guanine and 7,8-dihydro-8-oxo-guanine-specific oxidation in DNA by chromium(V).

    PubMed

    Sugden, Kent D; Martin, Brooke D

    2002-10-01

    The hexavalent oxidation state of chromium [Cr(VI)] is a well-established human carcinogen, although the mechanism of cancer induction is currently unknown. Intracellular reduction of Cr(VI) forms Cr(V), which is thought to play a fundamental role in the mechanism of DNA damage by this carcinogen. Two separate pathways of DNA damage, an oxidative pathway and a metal-binding pathway, have been proposed to account for the lesions observed in cell systems. We have used a model Cr(V) complex, N,N-ethylenebis(salicylidene-animato)oxochromium(V) [Cr(V)-Salen], to investigate the oxidative pathway of DNA damage and to elucidate the lesions generated from this oxidation process. Reaction of Cr(V)-Salen with synthetic oligonucleotides produced guanine-specific lesions that were not 8-oxo-2'-deoxyguanosine, based on the inability of iridium(IV) to further oxidize these sites. Oxidation products were identified using a 7,8-dihydro-8-oxo-2'-deoxyguanosine (8-oxo-G) containing oligonucleotide to increase the yields of product for identification by electrospray ionization mass spectrometry. The guanine-based lesions observed by mass spectrometry corresponded to the lesions guanidinohydantoin and spiroiminodihydantoin. The effects of these Cr(V)-Salen-induced lesions on DNA replication fidelity was assayed using a polymerase-based misincorporation assay. These lesions produced G --> T transversion mutations and polymerase stops at levels greater than those observed for 8-oxo-G. These data suggest a model by which chromate can cause DNA damage leading to mutations and cancer.

  15. Air plasma-material interactions at the oxidized surface of the PM1000 nickel-chromium superalloy

    NASA Astrophysics Data System (ADS)

    Panerai, Francesco; Marschall, Jochen; Thömel, Jan; Vandendael, Isabelle; Hubin, Annick; Chazot, Olivier

    2014-10-01

    Nickel-based superalloys are promising options for the thermal protection systems of hypersonic re-entry vehicles operating under moderate aerothermal heating conditions. We present an experimental study on the interactions between PM1000, an oxide dispersion strengthened nickel-chromium superalloy, and air plasma at surface temperatures between 1000 and 1600 K and pressures of 1500, 7500 and 10,000 Pa. Pre-oxidized PM1000 specimens are tested in high-enthalpy reactive air plasma flows generated by the Plasmatron wind tunnel at the von Karman Institute for Fluid Dynamics. Microscopic analysis of plasma-exposed specimens shows enhanced damage to the chromia scale at the lowest plasma pressure. Elemental surface analysis reveals the loss of Cr and the enhancement of Ni at the scale surface. A thermodynamic analysis supports the accelerated volatilization of Cr2O3 and the relative stability of NiO in the presence of atomic oxygen. Changes in the reflectance and emissivity of the oxidized surfaces due to plasma-exposure are presented. The catalytic efficiencies for dissociated air species recombination are determined as a function of surface temperature and pressure through a numerical rebuilding procedure and are compared with values presented in the literature for the same material.

  16. Investigation of Iron-Chromium-Niobium-Titanium Ferritic Stainless Steel for Solid Oxide Fuel Cell Interconnect Applications

    SciTech Connect

    Yang, Zhenguo; Xia, Guanguang; Wang, Chong M.; Nie, Zimin; Templeton, Joshua D.; Stevenson, Jeffry W.; Singh, Prabhakar

    2008-09-01

    As part of an effort to develop cost-effective ferritic stainless steel-based interconnects for solid oxide fuel cell (SOFC) stacks, AL 441 HPTM was studied in terms of its metallurgical characteristics, oxidation behavior, and electrical performance. Minor alloying elements (Nb and Ti) captured interstitials such as C by forming carbides, stabilizing the ferritic structure and mitigating the risks of sensitization and inter-granular corrosion. Laves phases rich in Nb and Si precipitated along grain boundaries during high temperature exposure, improving the steel’s high temperature mechanical strength. The capture of Si in the Laves phase minimized the Si activity in the steel substrate and prevented formation of an insulating silica layer at the scale/metal interface. However, the relatively high oxidation rate, and thus increasing ASR over time, necessitates the application of a conductive protection layer on the steel. In particular, Mn1.5Co1.5O4 spinel protection layers drastically improved the electrical performance of the ferritic stainless steel 441, acting as barriers to chromium outward and oxygen inward diffusion.

  17. Thin-film transistors with a graphene oxide nanocomposite channel.

    PubMed

    Jilani, S Mahaboob; Gamot, Tanesh D; Banerji, P

    2012-12-04

    Graphene oxide (GO) and graphene oxide-zinc oxide nanocomposites (GO-ZnO) were used as channel materials on SiO(2)/Si to fabricate thin-film transistors (TFT) with an aluminum source and drain. Pure GO-based TFT showed poor field-effect characteristics. However, GO-ZnO-nanocomposite-based TFT showed better field-effect performance because of the anchoring of ZnO nanostructures in the GO matrix, which causes a partial reduction in GO as is found from X-ray photoelectron spectroscopic data. The field-effect mobility of charge carriers at a drain voltage of 1 V was found to be 1.94 cm(2)/(V s). The transport of charge carriers in GO-ZnO was explained by a fluctuation-induced tunneling mechanism.

  18. Development of oxidation resistance in thoriated nickel-chromium base alloys

    NASA Technical Reports Server (NTRS)

    Seltzer, M. S.; Wilcox, B. A.; Jaffee, R. I.; Stringer, J.

    1971-01-01

    A pack process was developed which permits the introduction of nearly six weight percent aluminum into solid solution in the near-surface region of TDNiCr (Ni-20Cr-2ThO2. At this aluminum concentration an adherent alumina scale is produced on the alloy surface upon exposure to an environment of 1330 n/sq m (10 torr) or 101,000 n/sq m (760 torr) air at temperatures of 1093 C (2000 F) and 1204 C (2200 F). Room temperature mechanical properties of the aluminized alloys compare favorably with those of TDNiCr as received. While diffusivities for aluminum are a factor of three higher than those for chromium in TDNiCr or Ni-20Cr, the diffusion rates are similar for either of these elements in the thoriated or unthoriated alloy for a given temperature and grain size.

  19. Evolution of Defective State of Aluminum Oxide Irradiated with Chromium Ions after Annealing in Oxygen Environment

    NASA Astrophysics Data System (ADS)

    Kabyshev, A. V.; Konusov, F. V.

    2017-01-01

    The characteristics of interband and exponential optical absorption of leucosapphire and polycrystalline corundum (polycor) after irradiation with chromium ions and subsequent annealing in vacuum at 300–1800 K and in air at 300–800 K are studied. Contributions of defects with different thermal and chemical stability into optical parameters were established. The effect of intrinsic radiation defects, of substitutional defects and of complexes on base of oxygen and defects on formation the focal point in absorption spectra owing to fulfilment of the Urbach rule was determined. Heating in air of strongly defective material synthesized in surface layers of alumina by the ion–heat modification influences the characteristics of defects and the electronic structure of band gap negligibly.

  20. Application of Doehlert matrix to the study of electrochemical oxidation of Cr(III) to Cr(VI) in order to recover chromium from wastewater tanning baths.

    PubMed

    Ouejhani, A; Hellal, F; Dachraoui, M; Lallevé, G; Fauvarque, J F

    2008-09-15

    The aim of this study was to optimize simultaneously the chemical and faradic yields of electrochemical oxidation of chromium(III) to chromium(VI) over a titanium-platinum anode in order to recover trivalent chromium from aqueous and tanning baths effluent. A Doehlert design was used to optimize the significant experimental variables: concentration of chloride ions [Cl(-)] (mol L(-1)); temperature of reactional media T (degrees C); pH of reactional media; intensity of electrolysis current I (A); time of electrolysis t(h). The quadratic models of second degree relate chemical (R(C)) and faradic (R(F)) yields to the different variables affecting the electrochemical reaction were determined by the NEMROD software program. Having to study simultaneously two responses, the Pareto graphic analysis of effects was used. The results obtained in this study have shown that the current intensity and the electrolysis time were the main influent parameters on the removal ratio of chemical oxygen demand (COD), total organic carbon (TOC) and electrochemical oxidation of trivalent chromium.

  1. Chromium-Induced Ultrastructural Changes and Oxidative Stress in Roots of Arabidopsis thaliana

    PubMed Central

    Eleftheriou, Eleftherios P.; Adamakis, Ioannis-Dimosthenis S.; Panteris, Emmanuel; Fatsiou, Maria

    2015-01-01

    Chromium (Cr) is an abundant heavy metal in nature, toxic to living organisms. As it is widely used in industry and leather tanning, it may accumulate locally at high concentrations, raising concerns for human health hazards. Though Cr effects have extensively been investigated in animals and mammals, in plants they are poorly understood. The present study was then undertaken to determine the ultrastructural malformations induced by hexavalent chromium [Cr(VI)], the most toxic form provided as 100 μM potassium dichromate (K2Cr2O7), in the root tip cells of the model plant Arabidopsis thaliana. A concentration-dependent decrease of root growth and a time-dependent increase of dead cells, callose deposition, hydrogen peroxide (H2O2) production and peroxidase activity were found in Cr(VI)-treated seedlings, mostly at the transition root zone. In the same zone, nuclei remained ultrastructurally unaffected, but in the meristematic zone some nuclei displayed bulbous outgrowths or contained tubular structures. Endoplasmic reticulum (ER) was less affected under Cr(VI) stress, but Golgi bodies appeared severely disintegrated. Moreover, mitochondria and plastids became spherical and displayed translucent stroma with diminished internal membranes, but noteworthy is that their double-membrane envelopes remained structurally intact. Starch grains and electron dense deposits occurred in the plastids. Amorphous material was also deposited in the cell walls, the middle lamella and the vacuoles. Some vacuoles were collapsed, but the tonoplast appeared integral. The plasma membrane was structurally unaffected and the cytoplasm contained opaque lipid droplets and dense electron deposits. All electron dense deposits presumably consisted of Cr that is sequestered from sensitive sites, thus contributing to metal tolerance. It is concluded that the ultrastructural changes are reactive oxygen species (ROS)-correlated and the malformations observed are organelle specific. PMID:26184178

  2. Alleviation of chromium toxicity by glycinebetaine is related to elevated antioxidant enzymes and suppressed chromium uptake and oxidative stress in wheat (Triticum aestivum L.).

    PubMed

    Ali, Shafaqat; Chaudhary, Aaifa; Rizwan, Muhammad; Anwar, Hafiza Tania; Adrees, Muhammad; Farid, Mujahid; Irshad, Muhammad Kashif; Hayat, Tahir; Anjum, Shakeel Ahmad

    2015-07-01

    Little information is available on the role of glycinebetaine (GB) in chromium (Cr) tolerance while Cr toxicity is widespread problem in crops grown on Cr-contaminated soils. In this study, we investigated the influence of GB on Cr tolerance in wheat (Triticum aestivum L.) grown in sand and soil mediums. Three concentrations of chromium (0, 0.25, and 0.5 mM) were tested with and without foliar application of GB (0.1 M). Chromium alone led to a significant growth inhibition and content of chlorophyll a, b, proteins and enhanced the activity of antioxidant enzymes. Glycinebetaine foliar application successfully alleviated the toxic effects of Cr on wheat plants and enhanced growth characteristics, biomass, proteins, and chlorophyll contents. Glycinebetaine also reduced Cr accumulation in wheat plants especially in grains and enhanced the activity of antioxidant enzymes in both shoots and roots. This study provides evidence that GB application contributes to decreased Cr concentrations in wheat plants and its importance in the detoxification of heavy metals.

  3. High angular sensitivity thin film tin oxide sensor

    NASA Astrophysics Data System (ADS)

    Kaur, Davinder; Madaan, Divya; Sharma, V. K.; Kapoor, A.

    2016-05-01

    We present theoretical anlaysis of a thin film SnO2 (Tin Oxide) sensor for the measurement of variation in the refractive index of the bulk media. It is based on lossy mode resonance between the absorbing thin film lossy modes and the evanescent wave. Also the addition of low index dielectric matching layer between the prism and the lossy waveguiding layer future increase the angular sensitivity and produce an efficient refractive index sensor. The angular interrogation is done and obtained sensitivity is 110 degree/RIU. Theoretical analysis of the proposed sensor based on Fresnel reflection coefficients is presented. This enhanced sensitivity will further improve the monitoring of biomolecular interactions and the higher sensitivity of the proposed configurations makes it to be a much better option to be employed for biosensing applications.

  4. Work function recovery of air exposed molybdenum oxide thin films

    NASA Astrophysics Data System (ADS)

    Irfan, Irfan; James Turinske, Alexander; Bao, Zhenan; Gao, Yongli

    2012-08-01

    We report substantial work function (WF) recovery of air exposed molybdenum oxide thin films with vacuum annealing. We observed a sharp reduction in the MoOx WF (from 6.8 eV to 5.6 eV) as well as a very thin layer of oxygen rich adsorbate on the MoOx film after an hour of air exposure. The WF of the exposed MoOx film started to gradually recover with increasing annealing temperature in vacuum, and the saturation in the WF recovery was observed at 450 °C with WF ˜6.4 eV. We further studied the interface formation between the annealed MoOx and copper phthalocyanine (CuPc). The highest occupied molecular orbital (HOMO) level of CuPc was observed to be almost pinned to the Fermi level, strongly suggesting the possibility of efficient hole injection with the vacuum annealed MoOx film.

  5. Luminescent sulfides and solution-deposited oxide thin films

    NASA Astrophysics Data System (ADS)

    Anderson, Jeremy T.

    Solid state luminescent sulfides are prepared as powders in order to elucidate the relationship between structure and light emission. While the sulfides studied in this dissertation are known phosphors, materials are investigated in a variety of new ways. Elementary properties and structures of MgS are reviewed, and preparation of MgS is described with sufficient detail that it may be reproduced in laboratories worldwide. Luminescence of MgS:Eu is evaluated, primarily by interpretation of published work. Solid pellets of MgS:Eu are created for the purpose of depositing thin-film layers by physical vapor deposition, and incorporating the phosphor layer within ACTFEL structures. Fabricated devices are found to exhibit bright ACTFEL luminescence--the brightest known for MgS. Similarly, MgS films are doped with a variety of lanthanide atoms to investigate the hot-electron distribution in MgS layers during device operation. The system BaGa2S4--SrGa 2S4 is evaluated for mutual solid phase solubility. Addition of Eu2+ causes each of these phases to photoluminescence. The emission energies (and therefore colors) are adjusted according to composition. Thin-film oxides are deposited from solution sources. Solution-deposited ZnO serves as the semiconductor layer in transparent thin-film transistor devices. A new class of dielectric material is also developed by solution methods. HafSOx and ZircSOx films, and derivative compositions, are evaluated in simple capacitor structures and demonstrated in functioning transistor devices. High-resolution nanolaminate structures are also constructed from this class of materials. From the knowledge and experience of developing oxide thin-films, more general chemical strategies are expressed.

  6. Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties

    NASA Astrophysics Data System (ADS)

    Dey, Arjun; Nayak, Manish Kumar; Esther, A. Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A. K.; Bera, Parthasarathi; Barshilia, Harish C.; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D. Raghavendra; Sridhara, N.; Sharma, Anand Kumar

    2016-11-01

    Vanadium oxide-molybdenum oxide (VO-MO) thin (21–475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V2O5, V2O3 and VO2 along with MoO3. Reversible or smart transition was found to occur just above the room temperature i.e., at ~45–50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10‑5 mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films.

  7. Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties.

    PubMed

    Dey, Arjun; Nayak, Manish Kumar; Esther, A Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A K; Bera, Parthasarathi; Barshilia, Harish C; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D Raghavendra; Sridhara, N; Sharma, Anand Kumar

    2016-11-17

    Vanadium oxide-molybdenum oxide (VO-MO) thin (21-475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V2O5, V2O3 and VO2 along with MoO3. Reversible or smart transition was found to occur just above the room temperature i.e., at ~45-50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10(-5) mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films.

  8. Isothermal thermogravimetric analysis of soybean oil oxidation correlated to thin film micro-oxidation test methods

    Technology Transfer Automated Retrieval System (TEKTRAN)

    A method of correlation between the Thin Film Micro-Oxidation (TFMO) test with isothermal thermogravimetric analysis is reported utilizing a soybean oil system. Utilizing a kinetic model, pseudo-rate constants and “activation energy” can be calculated from weight loss data. This model accounts for o...

  9. Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties

    PubMed Central

    Dey, Arjun; Nayak, Manish Kumar; Esther, A. Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A. K.; Bera, Parthasarathi; Barshilia, Harish C.; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D. Raghavendra; Sridhara, N.; Sharma, Anand Kumar

    2016-01-01

    Vanadium oxide-molybdenum oxide (VO-MO) thin (21–475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V2O5, V2O3 and VO2 along with MoO3. Reversible or smart transition was found to occur just above the room temperature i.e., at ~45–50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10−5 mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films. PMID:27853234

  10. Cobalt vanadium oxide thin nanoplates: primary electrochemical capacitor application

    PubMed Central

    Zhang, Youjuan; Liu, Yuanying; Chen, Jing; Guo, Qifei; Wang, Ting; Pang, Huan

    2014-01-01

    Co3V2O8 thin nanoplates are firstly described as a kind of electrode material for supercapacitors. More importantly, from electrochemical measurements, the obtained Co3V2O8 nanoplate electrode shows a good specific capacitance (0.5 A g−1, 739 F g−1) and cycling stability (704 F g−1 retained after 2000 cycles). This study essentially offers a new kind of metal vanadium oxides as electrochemical active material for the development of supercapacitors. PMID:25023373

  11. Improved Charge Transfer by Thin Metal Oxide Films

    NASA Astrophysics Data System (ADS)

    Irfan

    The field of electronics has an immense impact on our day to day life. Efficient charge transfer at the semiconductor and electrode interface is one of the most crucial issues for the performance of any electronic device. A lot of effort has been spent to address this issue. A counter intuitive phenomenon of insertion of a thin metal oxide film at the semiconductor and electrode interface has gained momentum recently. In the current thesis, based on results of several experiments, I will propose a prominent mechanism of performance improvement with such insertions. I will also demonstrate the applicability of such metal oxide thin films in many other systems. First, I will introduce the scope of the thesis in detail. I will also introduce the background to understand the electronic structure of organic semiconductors, along with the interface formation at the semiconductor/metal interface. Then, I will discuss the measurement techniques. I will start the discussion on results with the insertion of a thin layer of MoOx (a transition metal oxide) between indium tin oxide (ITO) and two well studied organic semiconductors. I will also demonstrate that the optimum insertion layer thickness is just a few nanometers. I will illustrate the importance of high vacuum during the deposition of such insertion layers. I will also discuss the method to recover work function of air exposed MoOx films. I will further demonstrate that a thin layer of MoOx can be utilized to dope C60 strongly p-type. Then, I will discuss the application of MoO x insertion layer in CdTe based solar cells. I will further show the application of MoOx and organic double-inter-layer in organic devices. At the end, I will discuss an intense oxygen plasma treatment on ITO films and demonstrate a method to achieve high work function ITO films. The mechanism of high work function and application in devices will also be explained in detail. Finally, I will summarize the thesis.

  12. Trap States of the Oxide Thin Film Transistor

    NASA Astrophysics Data System (ADS)

    Yu, Kyeong Min; Yuh, Jin Tae; Park, Sang Hee Ko; Ryu, Min Ki; Yun, Eui Jung; Bae, Byung Seong

    2013-10-01

    We investigated the temperature dependent recovery of the threshold voltage shift observed in both ZnO and indium gallium zinc oxide (IGZO) thin film transistors (TFTs) after application of gate bias and light illumination. Two types of recovery were observed for both the ZnO and IGZO TFTs; low temperature recovery (below 110 °C) which is attributed to the trapped charge and high temperature recovery (over 110 °C) which is related to the annihilation of trap states generated during stresses. From a comparison study of the recovery rate with the analysis of hydrogen diffusion isochronal annealing, a similar behavior was observed for both TFT recovery and hydrogen diffusion. This result suggests that hydrogen plays an important role in the generation and annihilation of trap states in oxide TFTs under gate bias or light illumination stresses.

  13. Thin water film formation on metal oxide crystal surfaces.

    PubMed

    Gilbert, Benjamin; Katz, Jordan E; Rude, Bruce; Glover, T E; Hertlein, Marcus P; Kurz, Charles; Zhang, Xiaoyi

    2012-10-09

    Reactions taking place at hydrated metal oxide surfaces are of considerable environmental and technological importance. Surface-sensitive X-ray methods can provide structural and chemical information on stable interfacial species, but it is challenging to perform in situ studies of reaction kinetics in the presence of water. We have implemented a new approach to creating a micrometer-scale water film on a metal oxide surface by combining liquid and gas jets on a spinning crystal. The water films are stable indefinitely and sufficiently thin to allow grazing incidence X-ray reflectivity and spectroscopy measurements. The approach will enable studies of a wide range of surface reactions and is compatible with interfacial optical-pump/X-ray-probe studies.

  14. Enhanced electrochromism in cerium doped molybdenum oxide thin films

    SciTech Connect

    Dhanasankar, M.; Purushothaman, K.K.; Muralidharan, G.

    2010-12-15

    Cerium (5-15% by weight) doped molybdenum oxide thin films have been prepared on FTO coated glass substrate at 250 {sup o}C using sol-gel dip coating method. The structural and morphological changes were observed with the help of XRD, SEM and EDS analysis. The amorphous structure of the Ce doped samples, favours easy intercalation and deintercalation processes. Mo oxide films with 10 wt.% of Ce exhibit maximum anodic diffusion coefficient of 24.99 x 10{sup -11} cm{sup 2}/s and the change in optical transmittance of ({Delta}T at 550 nm) of 79.28% between coloured and bleached state with the optical density of ({Delta}OD) 1.15.

  15. Study of the thermodynamics of chromium(III) and chromium(VI) binding to iron(II/III)oxide or magnetite or ferrite and magnanese(II) iron (III) oxide or jacobsite or manganese ferrite nanoparticles.

    PubMed

    Luther, Steven; Brogfeld, Nathan; Kim, Jisoo; Parsons, J G

    2013-06-15

    Removal of chromium(III) or (VI) from aqueous solution was achieved using Fe3O4, and MnFe2O4 nanomaterials. The nanomaterials were synthesized using a precipitation method and characterized using XRD. The size of the nanomaterials was determined to be 22.4±0.9 nm (Fe3O4) and 15.5±0.5 nm (MnFe2O4). The optimal binding pH for chromium(III) and chromium(VI) were pH 6 and pH 3. Isotherm studies were performed, under light and dark conditions, to determine the capacity of the nanomaterials. The capacities for the light studies with MnFe2O4 and Fe3O4 were determined to be 7.189 and 10.63 mg/g, respectively, for chromium(III). The capacities for the light studies with MnFe2O4 and Fe3O4 were 3.21 and 3.46 mg/g, respectively, for chromium(VI). Under dark reaction conditions the binding of chromium(III) to the MnFe2O4 and Fe3O4 nanomaterials were 5.74 and 15.9 mg/g, respectively. The binding capacity for the binding of chromium(VI) to MnFe2O4 and Fe3O4 under dark reaction conditions were 3.87 and 8.54 mg/g, respectively. The thermodynamics for the reactions showed negative ΔG values, and positive ΔH values. The ΔS values were positive for the binding of chromium(III) and for chromium(VI) binding under dark reaction conditions. The ΔS values for chromium(VI) binding under the light reaction conditions were determined to be negative.

  16. Synthesis, characterization, and crystal structures of uranyl compounds containing mixed chromium oxidation states

    NASA Astrophysics Data System (ADS)

    Unruh, Daniel K.; Quicksall, Andrew; Pressprich, Laura; Stoffer, Megan; Qiu, Jie; Nuzhdin, Kirill; Wu, Weiqiang; Vyushkova, Mariya; Burns, Peter C.

    2012-07-01

    The mixed-valence chromium uranyl compounds Li5[(UO2)4(Cr(V)O5)(Cr(VI)O4)4](H2O)17 (1), (Mg(H2O)6)5[(UO2)8(Cr(V)O5)2(Cr(VI)O4)8] (2) and (NH4)5[(UO2)4(Cr(V)O5)(Cr(VI)O4)2]H2O11 (3) have been synthesized and characterized. Each contains an identical sheet of cation-centered polyhedra. Central to the connectivity of the sheet are four uranyl pentagonal bipyramids that share some of their equatorial vertices, giving a four-membered ring. The Cr(V) cation located near the center of this ring is coordinated by O atoms in a square pyramidal arrangement. The Cr(VI) is tetrahedrally coordinated by O atoms, and these tetrahedra link the four-membered rings of bipyramids. The mixed-valence nature of the sheet was verified by XANES, an EPR spectrum, and bond-valence analysis. Low-valence cations and H2O groups reside between the sheets of uranyl and chromate polyhedra, where they provide linkages between adjacent sheets.

  17. Method of reforming gasoline to raise the octane thereof utilizing low valence chromium composited with non-oxidizing high surface area support

    SciTech Connect

    Gleim, W.K.T.

    1984-05-15

    This invention relates to a method of reforming gasoline to raise the octane number thereof utilizing a novel catalyst comprising a low valence chromium metallic component composited with a non-oxidizing high surface area support. The low valence metallic component is present in divalent form or as a combination of the metallic state and the divalent form-preferably as a chloride and/or bromide. The preferred support is a high surface area coke.

  18. Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors

    NASA Astrophysics Data System (ADS)

    Kim, Chang-Jung; Kim, Sangwook; Lee, Je-Hun; Park, Jin-Seong; Kim, Sunil; Park, Jaechul; Lee, Eunha; Lee, Jaechul; Park, Youngsoo; Kim, Joo Han; Shin, Sung Tae; Chung, U.-In

    2009-12-01

    We developed amorphous hafnium-indium-zinc oxide (HIZO) thin films as oxide semiconductors and investigated the films electrically and physically. Adding of hafnium (Hf) element can suppress growing the columnar structure and drastically decrease the carrier concentration and hall mobility in HIZO films. The thin film transistors (TFTs) with amorphous HIZO active channel exhibit good electrical properties with field effect mobility of around 10 cm2/Vs, S of 0.23 V/decade, and high Ion/off ratio of over 108, enough to operate the next electronic devices. In particular, under bias-temperature stress test, the HIZO TFTs with 0.3 mol % (Hf content) showed only 0.46 V shift in threshold voltage, compared with 3.25 V shift in HIZO TFT (0.1 mol %). The Hf ions may play a key role to improve the instability of TFTs due to high oxygen bonding ability. Therefore, the amorphous HIZO semiconductor will be a prominent candidate as an operation device for large area electronic applications.

  19. Synthesis and Oxidation Resistance of h-BN Thin Films

    NASA Astrophysics Data System (ADS)

    Stewart, David; Meulenberg, Robert; Lad, Robert

    Hexagonal boron nitride (h-BN) is an exciting 2D material for use in sensors and other electronic devices that operate in harsh, high temperature environments. Not only is h-BN a wide band gap material with excellent wear resistance and high temperature stability, but recent reports indicate that h-BN can prevent metallic substrates from oxidizing above 600°C in low O2 pressures. However, the PVD of highly crystalline h-BN films required for this oxidation protection has proven challenging. In this work, we have explored the growth of h-BN thin films by reactive RF magnetron sputtering from an elemental B target in an Ar/N2 atmosphere. The film growth rate is extremely slow and the resulting films are atomically smooth and homogeneous. Using DC biasing during deposition and high temperature annealing treatments, the degree of film crystallinity can be controlled. The oxidation resistance of h-BN films deposited on inert sapphire and reactive metal substrates such as Zr and ZrB2 has been examined by techniques such as XPS, XRD, and SEM after oxidation between 600 and 1200°C under varying oxygen pressures. The success of h-BN as a passivation layer for metallic substrates in harsh environments is shown to depend greatly on its crystalline quality and defects. Supported by the NSF SusChEM program.

  20. Promotive role of 5-aminolevulinic acid on chromium-induced morphological, photosynthetic, and oxidative changes in cauliflower (Brassica oleracea botrytis L.).

    PubMed

    Ahmad, Rehan; Ali, Shafaqat; Hannan, Fakhir; Rizwan, Muhammad; Iqbal, Muhammad; Hassan, Zaidul; Akram, Nudrat Aisha; Maqbool, Saliha; Abbas, Farhat

    2017-03-01

    Chromium (Cr) is among the most toxic pollutants in the environment that adversely affect the living organisms and physiological processes in different plants. The present study investigated the effect of 15 mg L(-1) of 5-aminolevulinic acid (ALA) on morpho-physiological attributes of cauliflower (Brassica oleracea botrytis L.) under different Cr concentrations (0, 10, 100, and 200 μM) in the growth medium. The results showed that Cr stress decreased the growth, biomass, photosynthetic, and gas exchange parameters. Chromium stress enhanced the activities of enzymatic antioxidants, catalase (CAT), superoxide dismutase (SOD), and peroxidase (POD) in response to oxidative stress caused by the elevated levels of malondialdehyde (MDA), hydrogen peroxide (H2O2), and electrolyte leakage (EL) in both roots and leaves of cauliflower. Chromium concentrations and total Cr uptake were increased in leaves, stems, and roots with increasing Cr levels in the culture medium. Foliar application of ALA increased the plant growth parameters, biomass, gas exchange parameters, and photosynthetic pigments under Cr stress compared to the treatments without ALA. Foliar application ALA decreased the levels of MDA, EL, and H2O2 while further improved the performance of antioxidant in both leaves and roots compared to only Cr-stressed plant. Chromium concentrations and total Cr uptake were decreased by the ALA application compared to treatments without ALA application. The results of the present study indicated that foliar application of ALA might be beneficial in minimizing Cr uptake and its toxic effects in cauliflower.

  1. Thin films of chromium oxide compounds formed by the spray-ICP technique

    NASA Astrophysics Data System (ADS)

    Suzuki, M.; Kagawa, M.; Syono, Y.; Hirai, T.

    1990-01-01

    This films of Cr 2O 3, MCr 2O 4 (M = Co, Ni, Zn) and LaCrO 3 were synthesized on single crystal sapphire and fused quartz substrates, by introducing ultrasonically atomized solutions of corresponding metal nitrates into an inductively coupled plasma above 5000 K (the spray-ICP technique). All the films were transparent, with preferred orientations (110) for Cr 2O 3, (311) for MCr 2O 4 and (112) for LaCrO 3, when deposited on the sapphire substrates with a surface giving background X-ray reflection peaks. The (311) orientation of MCr 2O 4, however, changed to (111) with increasing substrate temperature. Non-oriented films were formed on the fused quartz substrates.

  2. Resistance of nickel-chromium-aluminum alloys to cyclic oxidation at 1100 C and 1200 C

    NASA Technical Reports Server (NTRS)

    Barrett, C. A.; Lowell, C. E.

    1976-01-01

    Nickel-rich alloys in the Ni-Cr-Al system were evaluated for cyclic oxidation resistance in still air at 1,100 and 1,200 C. A first approximation oxidation attack parameter Ka was derived from specific weight change data involving both a scaling growth constant and a spalling constant. An estimating equation was derived with Ka as a function of the Cr and Al content by multiple linear regression and translated into countour ternary diagrams showing regions of minimum attack. An additional factor inferred from the regression analysis was that alloys melted in zirconia crucibles had significantly greater oxidation resistance than comparable alloys melted otherwise.

  3. The 1200 C cyclic oxidation behavior of two nickel-aluminum alloys (Ni3AL and NiAl) with additions of chromium, silicon, and titanium

    NASA Technical Reports Server (NTRS)

    Lowell, C. E.; Santoro, G. J.

    1972-01-01

    The alloys Ni3Al and NiAl with and without 1 and 3 atomic percent chromium, silicon, and titanium replacing the aluminum were cyclically oxidized at 1200 C for times to 200 hours, and the results were compared with those obtained with the alloy B-1900 subjected to the same oxidation process. The evaluation was based on metal recession, specific weight change, metallography, electron microprobe analysis, and X-ray diffraction. The oxidation resistance of Ni3Al was improved by Si, unaffected by Ti, and degraded by Cr. The oxidation resistance of NiAl was slightly improved by Ti, unaffected by Si, and degraded by Cr. The oxidation resistance of Ni3Al with 1 atomic percent Si was nearly equal to that of NiAl. Alloy B-1900 exhibited oxidation resistance comparable to that of Ni3Al + Cr compositions.

  4. Substitution for chromium in 304 stainless steel. [effects on oxidation and corrosion resistance

    NASA Technical Reports Server (NTRS)

    Stephens, J. R.; Barrett, C. A.

    1978-01-01

    An investigation was conducted to determine the effects of substituting less strategic elements for Cr on oxidation and corrosion resistance of AISI 304 stainless steel. Cyclic oxidation resistance was evaluated at 870 C. Corrosion resistance was determined by exposure of specimens to a boiling copper-rich solution of copper sulfate and sulfuric acid. Alloy substitutes for Cr included Al, Mn, Mo, Si, Ti, V, Y, and misch metal. A level of about 12% Cr was the minimum amount of Cr required for adequate oxidation and corrosion resistance in the modified composition 304 stainless steels. This represents a Cr saving of 33 percent. Two alloys containing 12% Cr plus 2% Al plus 2% Mo and 12% Cr plus 2.65% Si were identified which exhibited oxidation and corrosion resistance comparable to AISI 304 stainless steel.

  5. Physical investigation of electrophoretically deposited graphene oxide and reduced graphene oxide thin films

    NASA Astrophysics Data System (ADS)

    Politano, Grazia Giuseppina; Versace, Carlo; Vena, Carlo; Castriota, Marco; Ciuchi, Federica; Fasanella, Angela; Desiderio, Giovanni; Cazzanelli, Enzo

    2016-11-01

    Graphene oxide and reduced graphene oxide thin films are very promising materials because they can be used in optoelectronic devices and in a growing range of applications such as touch screens and flexible displays. In this work, graphene oxide (GO) and thermally reduced graphene oxide (rGO) thin films, deposited on Ti/glass substrates, have been obtained by electrophoretic deposition. The morphological and the structural properties of the samples have been investigated by micro-Raman technique, X-ray reflectometry, and SEM analysis. In order to study the optical and electrical properties, variable angle spectroscopic ellipsometry and impedance analysis have been performed. The thermal annealing changes strongly the structural, electrical, and optical properties, because during the thermal processes some amount of sp3 bonds originally present in GO were removed. In particular, the annealing enhances the Ohmic behavior of the rGO film increasing its conductivity and the estimated optical density. Moreover, using electrophoretic deposition, we have found a higher value of optical density for GO thin films, not observed in GO films obtained with other deposition methods.

  6. Toxicity and oxidative stress induced by chromium in workers exposed from different occupational settings around the globe: A review.

    PubMed

    Junaid, Muhammad; Hashmi, Muhammad Zaffar; Malik, Riffat Naseem; Pei, De-Sheng

    2016-10-01

    The present review focused on the levels and toxicological status of heavy metals especially chromium (Cr) in the exposed workers from different occupational settings around the globe and in Pakistan. It was found that exposed workers from leather tanning and metal plating units showed elevated levels of Cr than the workers from other occupational settings. Cr and other heavy metals level in biological matrices of the exposed workers in different occupational settings revealed that developing countries are severely contaminated. Occupational settings from the Sialkot district, Pakistan exhibited elevated level of Cr in biological entities of the exposed workers. Review suggested that higher level of Cr exposure to the workers enhance the oxidative stress (reactive oxygen species (ROS) and hydroxyl (OH) radical generation) which may cause; cellular and molecular damage such as genotoxicity and chromosomal aberration formations, and carcinogenic effects. This review will help to understand the Cr contamination mechanisms and associated health implications in different occupational settings around the globe in general and particularly to Pakistan. This study will also assist occupational health and safety management authorities to devise or change the Cr recommended exposure limits (REL) for different occupational settings.

  7. Impact of maternal chromium restriction on glucose tolerance, plasma insulin and oxidative stress in WNIN rat offspring.

    PubMed

    Padmavathi, Inagadapa J N; Rao, Kalashikam Rajender; Raghunath, Manchala

    2011-12-01

    Robust evidence suggests that nutritional insult during fetal development could program the offspring to glucose intolerance, impaired insulin response and insulin resistance (IR). Considering the importance of chromium (Cr) in maintaining carbohydrate metabolism, this study determined the effect of maternal Cr restriction (CrR) on glucose metabolism and plasma insulin in Wistar/NIN (WNIN) rat offspring and the associated biochemical and/or molecular mechanisms. Female, weanling WNIN rats received ad libitum for 12 weeks, a control diet or the same with 65% restriction of Cr and mated with control males. Some of the Cr-restricted dams were rehabilitated from conception or parturition and their pups weaned on to control diet. At the time of weaning, half of the Cr restricted offspring were rehabilitated to control diet while others continued on Cr-restricted diet. Maternal CrR increased fasting plasma glucose, fasting insulin, homeostasis model assessment of IR, and area under the curve of glucose and insulin during oral glucose tolerance test in the offspring. Expression and activity of rate-limiting enzymes of glucose metabolism were comparable among different groups and expression of genes involved in insulin secretion was increased albeit in male offspring whereas antioxidant enzyme activities were decreased in offspring of both genders. Rehabilitation, in general, corrected the changes albeit partially. Maternal dietary CrR induced IR, impaired glucose tolerance in WNIN rat offspring and was associated with increased oxidative stress, which may predispose them to type 2 diabetes in their later life.

  8. Chromium (VI) induced oxidative damage to DNA: increase of urinary 8-hydroxydeoxyguanosine concentrations (8-OHdG) among electroplating workers

    PubMed Central

    Kuo, H; Chang, S; Wu, K; Wu, F

    2003-01-01

    Aims: To investigate the concentration of urinary 8-hydroxydeoxyguanosine (8-OHdG) among electroplating workers in Taiwan. Methods: Fifty workers were selected from five chromium (Cr) electroplating plants in central Taiwan. The 20 control subjects were office workers with no previous exposure to Cr. Urinary 8-OHdG concentrations were determined using high performance liquid chromatography with electrochemical detection. Results: Urinary 8-OHdG concentrations among Cr workers (1149.5 pmol/kg/day) were higher than those in the control group (730.2 pmol/kg/day). There was a positive correlation between urinary 8-OHdG concentrations and urinary Cr concentration (r = 0.447, p < 0.01), and urinary 8-OHdG correlated positively with airborne Cr concentration (r = 0.285). Using multiple regression analysis, the factors that affected urinary 8-OHdG concentrations were alcohol, the common cold, and high urinary Cr concentration. There was a high correlation of urinary 8-OHdG with both smoking and drinking, but multiple regression analysis showed that smoking was not a significant factor. Age and gender were also non-significant factors. Conclusion: 8-OHdG, which is an indicator of oxidative DNA damage, was a sensitive biomarker for Cr exposure. PMID:12883020

  9. Lactational hexavalent chromium exposure-induced oxidative stress in rat uterus is associated with delayed puberty and impaired gonadotropin levels.

    PubMed

    Samuel, Jawahar B; Stanley, Jone A; Roopha, Dailiah P; Vengatesh, Ganapathy; Anbalagan, Jaganathan; Banu, Sakhila K; Aruldhas, Michael M

    2011-02-01

    Hexavalent chromium (CrVI) is a transition element utilized in many fields of modern industries. CrVI is a reproductive metal toxicant that can traverse the placental barrier and cause a wide range of fetal effects. Therefore, the present study was carried out to determine the CrVI-induced utero-toxicity. In the present study, lactating rats received drinking water containing CrVI (50 mg/L and 200 mg/L) from postnatal days (PND) 1-21. During PND 1-21, the pups received CrVI via the mother's milk. Pups from both control and treatment groups were continued on regular diet and water from PND-21 onwards and euthanized on PND-45 and -65. Specific activities antioxidants such as superoxide dismutase (SOD), catalase (CAT), glutathione peroxidase (GPx), glutathione reductase (GR), glutathione-S-transferase (GST) were estimated. Hydrogen peroxide (H₂O₂), lipid peroxidation (LPO) and serum gonadotropins viz. Luteinizing hormone (LH) and follicle stimulating hormone (FSH) were also assayed. Specific activities of SOD, CAT, GPX, GR and GST and serum testosterone and progesterone were significantly decreased, while H₂O₂, LPO and serum FSH was increased in 50-parts per million (ppm) and 200 ppm-treated rats in an age-dependent manner. These results suggest that lactational CrVI exposure induces oxidative stress in rat uterus by decreasing antioxidant enzymes, which were associated with delayed puberty and altered steroids and gonadotrophin levels.

  10. Structural and Magnetoresistive Properties of Nanometric Films Based on Iron and Chromium Oxides on the Si Substrate

    NASA Astrophysics Data System (ADS)

    Smirnov, Aleksey B.; Kryvyi, Serhii B.; Mulenko, Sergii A.; Sadovnikova, Maria L.; Savkina, Rada K.; Stefan, Nicolaie

    2016-10-01

    Ultraviolet photons of KrF laser (248 nm) was used for the synthesis of nanometric films based on iron and chromium oxides (Fe2O3 - X (0 ≤ x ≤ 1) and Cr3 - X O3 - Y (0 ≤ x ≤ 2; 0 ≤ y ≤ 2)) with variable thickness, stoichiometry, and electrical properties. Film deposition was carried out on the silicon substrate Si < 100 > at the substrate's temperature T S = 293 K. X-ray diffraction and X-ray reflectometry analysis were used for the obtained structure characterization. Such a combined investigation reveals the composition and texture for samples investigated and provides useful information about layer thickness and roughness. Fe2O3 - X (0 ≤ x ≤ 1) nanometric films demonstrate the negative magnetoresistance in magnetic fields up 7 kOe. At the same time, for hybrid systems of the alternate layers Fe2O3 - X (0 ≤ x ≤ 1)/Cr3 - X O3 - Y (0 ≤ x ≤ 2; 0 ≤ y ≤ 2), the positive magnetoresistance as well as the magnetic hysteresis and magnetoresistivity switching effect in the low magnetic fields were observed.

  11. Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

    DOEpatents

    Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

    2010-07-13

    Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

  12. The structure of nickel and indium oxide thin films from EXAFS data

    NASA Astrophysics Data System (ADS)

    Bets, V.; Zamozdiks, T.; Lusis, A.; Purans, J.; Bausk, N.; Sheromov, M.

    1987-11-01

    The structure of nickel oxide and indium oxide doped by tin films prepared by reactive magnetron sputtering has been studied by the EXAFS method. It has been found that the nickel oxide thin film has a microcrystalline structure with significant disorder proved by the increase of the Debye-Waller factor and the sharp decrease of peak amplitudes. The indium oxide thin film has a noticeable structural disorder due to 8% tin dopping.

  13. Flexible Electronics Powered by Mixed Metal Oxide Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Marrs, Michael

    A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detectors. Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer improves both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment to the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors. Low temperature (200°C) processed amorphous silicon photodiodes were developed successfully by balancing the tradeoffs

  14. Oxidation behavior of Cr(III) during thermal treatment of chromium hydroxide in the presence of alkali and alkaline earth metal chlorides.

    PubMed

    Mao, Linqiang; Gao, Bingying; Deng, Ning; Liu, Lu; Cui, Hao

    2016-02-01

    The oxidation behavior of Cr(III) during the thermal treatment of chromium hydroxide in the presence of alkali and alkaline earth metal chlorides (NaCl, KCl, MgCl2, and CaCl2) was investigated. The amounts of Cr(III) oxidized at various temperatures and heating times were determined, and the Cr-containing species in the residues were characterized. During the transformation of chromium hydroxide to Cr2O3 at 300 °C approximately 5% of the Cr(III) was oxidized to form intermediate compounds containing Cr(VI) (i.e., CrO3), but these intermediates were reduced to Cr2O3 when the temperature was above 400 °C. Alkali and alkaline earth metals significantly promoted the oxidation of Cr(III) during the thermal drying process. Two pathways were involved in the influences the alkali and alkaline earth metals had on the formation of Cr(VI). In pathway I, the alkali and alkaline earth metals were found to act as electron transfer agents and to interfere with the dehydration process, causing more intermediate Cr(VI)-containing compounds (which were identified as being CrO3 and Cr5O12) to be formed. The reduction of intermediate compounds to Cr2O3 was also found to be hindered in pathway I. In pathway II, the alkali and alkaline earth metals were found to contribute to the oxidation of Cr(III) to form chromates. The results showed that the presence of alkali and alkaline earth metals significantly increases the degree to which Cr(III) is oxidized during the thermal drying of chromium-containing sludge.

  15. Effect of nano-oxide particle size on radiation resistance of iron-chromium alloys

    NASA Astrophysics Data System (ADS)

    Xu, Weizong; Li, Lulu; Valdez, James A.; Saber, Mostafa; Zhu, Yuntian; Koch, Carl C.; Scattergood, Ronald O.

    2016-02-01

    Radiation resistance of Fe-14Cr alloys under 200 keV He irradiation at 500 °C was systematically investigated with varying sizes of nano oxide Zr, Hf and Cr particles. It is found that these nano oxide particles acted as effective sites for He bubble formation. By statistically analyzing 700-1500 He bubbles at the depth of about 150-700 nm from a series of HRTEM images for each sample, we established the variation of average He bubble size, He bubble density, and swelling percentage along the depth, and found them to be consistent with the He concentration profile calculated from the SIRM program. Oxide particles with sizes less than 3.5-4 nm are found most effective for enhancing radiation resistance in the studied alloy systems.

  16. Oxidation and corrosion behavior of modified-composition, low-chromium 304 stainless steel alloys

    NASA Technical Reports Server (NTRS)

    Stephens, J. R.; Barrett, C. A.

    1977-01-01

    The effects of substituting less strategic elements than Cr on the oxidation and corrosion resistance of AISI 304 stainless steel were investigated. Cyclic oxidation resistance was evaluated at 870 C. Corrosion resistance was determined by exposure of specimens to a boiling copper-rich solution of copper sulfate and sulfuric acid. Alloy substitutes for Cr included Al, Mn, Mo, Si, Ti, V, Y, and misch metal. A level of about 12% Cr was the minimum amount of Cr required for adequate oxidation and corrosion resistance in the modified composition 304 stainless steels. This represents a Cr saving of at least 33%. Two alloys containing 12% Cr and 2% Al plus 2% Mo and 12% Cr plus 2.65% Si were identified as most promising for more detailed evaluation.

  17. Self-formed copper oxide contact interlayer for high-performance oxide thin film transistors

    SciTech Connect

    Gao, Xu E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Aikawa, Shinya; Mitoma, Nobuhiko; Lin, Meng-Fang; Kizu, Takio; Tsukagoshi, Kazuhito E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Nabatame, Toshihide

    2014-07-14

    Oxide thin film transistor employing copper source/drain electrodes shows a small turn on voltage and reduced hysteresis. Cross-sectional high-resolution transmission electron microscopy image confirmed the formation of ∼4 nm CuO{sub x} related interlayer. The lower bond-dissociation energy of Cu-O compared to Si-O and In-O suggests that the interlayer was formed by adsorbing oxygen molecules from surrounding environment instead of getting oxygen atoms from the semiconductor film. The formation of CuO{sub x} interlayer acting as an acceptor could suppress the carrier concentration in the transistor channel, which would be utilized to control the turn on voltage shifts in oxide thin film transistors.

  18. Properties of mixed molybdenum oxide iridium oxide thin films synthesized by spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Patil, P. S.; Kawar, R. K.; Sadale, S. B.; Inamdar, A. I.; Deshmukh, H. P.

    2006-09-01

    Molybdenum-doped iridium oxide thin films have been deposited onto corning glass- and fluorine-doped tin oxide coated corning glass substrates at 350 °C by using a pneumatic spray pyrolysis technique. An aqueous solution of 0.01 M ammonium molybdate was mixed with 0.01 M iridium trichloride solution in different volume proportions and the resultant solution was used as a precursor solution for spraying. The as-deposited samples were annealed at 600 °C in air medium for 1 h. The structural, electrical and optical properties of as-deposited and annealed Mo-doped iridium oxide were studied and values of room temperature electrical resistivity, and thermoelectric power were estimated. The as-deposited samples with 2% Mo doping exhibit more pronounced electrochromism than other samples, including pristine Ir oxide.

  19. Oxidative stress and antioxidant responses to increasing concentrations of trivalent chromium in the Andean crop species Chenopodium quinoa Willd.

    PubMed

    Scoccianti, Valeria; Bucchini, Anahi E; Iacobucci, Marta; Ruiz, Karina B; Biondi, Stefania

    2016-11-01

    Quinoa (Chenopodium quinoa Willd), an ancient Andean seed crop, exhibits exceptional nutritional properties and resistance to abiotic stress. The species' tolerance to heavy metals has, however, not yet been investigated nor its ability to take up and translocate chromium (Cr). This study aimed to investigate the metabolic adjustments occurring upon exposure of quinoa to several concentrations (0.01-5mM) of CrCl3. Young hydroponically grown plants were used to evaluate Cr uptake, growth, oxidative stress, and other biochemical parameters three and/or seven days after treatment. Leaves accumulated the lowest amounts of Cr, while roots and stems accumulated the most at low and at high metal concentrations, respectively. Fresh weight and photosynthetic pigments were reduced only by the higher Cr(III) doses. Substantially increased lipid peroxidation, hydrogen peroxide, and proline levels were observed only with 5mM Cr(III). Except for a significant decrease at day 7 with 5mM Cr(III), total polyphenols and flavonoids maintained control levels in Cr(III)-treated plants, whereas antioxidant activity increased in a dose-dependent manner. Maximum polyamine accumulation was observed in 1mM CrCl3-treated plants. Even though α- and γ-tocopherols also showed enhanced levels only with the 1mM concentration, tyrosine aminotransferase (TAT, EC 2.6.1.5) activity increased under Cr(III) treatment in a dose- and time-dependent manner. Taken together, results suggest that polyamines, tocopherols, and TAT activity could contribute to tolerance to 1mM Cr(III), but not to the highest concentration that, instead, generated oxidative stress.

  20. Direct oxidation of guanine and 7,8-dihydro-8-oxoguanine in DNA by a high-valent chromium complex: a possible mechanism for chromate genotoxicity.

    PubMed

    Sugden, K D; Campo, C K; Martin, B D

    2001-09-01

    Intracellular reductive activation of the human carcinogen chromate, Cr(VI), is a necessary step in the formation of DNA lesions that lead to cancer. Reductive activation forms the transient metastable high-valent oxidation state of Cr(V) as a precursor to the final intracellularly stable oxidation state, Cr(III). In this study, we have used a model high-valent Cr(V) complex, N,N'-ethylenebis(salicylideneanimato)oxochromium(V), Cr(V)-Salen, to probe the mechanism of interaction between this oxidation state of chromium and DNA. This interaction was found to be specific toward the oxidation of the nucleic acid base guanine in unmodified single- and double-stranded oligonucleotides as measured by an increased level of DNA strand cleavage at these sites following piperidine treatment. Replacement of a single guanine residue in DNA with a more readily oxidized 7,8-dihydro-8-oxoguanine (8-oxo-G) base allowed for site-specific oxidation at this modified site within the DNA strand by the Cr(V)-Salen complex. HPLC and ESI-mass spectrometry were used to identify the modified guanine base lesions formed in the reaction of this high-valent chromium complex with the 8-oxo-G-containing DNA substrate. Two of these modified base lesions, identified as guanidinohydantoin and spiroiminodihydantoin, were found in the reaction of the Cr(V)-Salen complex with 8-oxo-G-modified DNA, while only one, spiroiminodihydantoin, was formed from oxidation of the 8-oxo-G nucleoside. A primer extension assay using the exo(-) Klenow fragment demonstrated polymerase arrest at the site of these base modifications as well as a high degree of misincorporation of adenine opposite the site of modification. These results suggest that mutations arising from G --> T transversions would predominate with these lesions. The mechanism of damage and base oxidation products for the interaction between high-valent chromium and DNA described herein may be relevant to the in vivo formation of DNA damage leading to

  1. Visible light-induced photocatalytic reduction of graphene oxide by tungsten oxide thin films

    NASA Astrophysics Data System (ADS)

    Choobtashani, M.; Akhavan, O.

    2013-07-01

    Tungsten oxide thin films (deposited by thermal evaporation or sol gel method) were used for photocatalytic reduction of graphene oxide (GO) platelets (synthesized through a chemical exfoliation method) on surface of the films under UV or visible light of the environment, in the absence of any aqueous ambient at room temperature. Atomic force microscopy (AFM) technique was employed to characterize surface morphology of the GO sheets and the tungsten oxide films. Moreover, using X-ray photoelectron spectroscopy (XPS), chemical state of the tungsten oxide films and the photocatalytic reduction of the GO platelets were quantitatively investigated. The better performance of the sol-gel tungsten oxide films in photocatalytic reduction of GO platelets as compared to the evaporated tungsten oxide films was assigned to lower W5+/W6+ ratio (i.e., a better stoichiometry) and higher surface water content of the sol-gel film. The GO reduction level achieved after 24 h UV-assisted photocatalytic reduction on surface of the sol-gel tungsten oxide film was comparable with the reduction level usually obtainable by hydrazine. The sol-gel tungsten oxide film even showed an efficient photocatalytic reduction of the GO platelets after exposure to the visible light of the environment for 2 days.

  2. Investigation of pyrite oxidation by hexavalent chromium: solution species and surface chemistry.

    PubMed

    Demoisson, Frédéric; Mullet, Martine; Humbert, Bernard

    2007-12-15

    Pyrite oxidation processes by aqueous Cr(VI) were investigated at 25 degrees C under an argon atmosphere. Synthetic pyrite suspensions (6 g L(-1)) were reacted for 20 h with a range of Cr(VI) solutions from 0 to 700 microM and at pH 2-12. The main objective of this work was to investigate the reaction mechanisms by emphasizing the role of sulfur species. Aqueous chemical processes were well illustrated in acidic media where significant amounts of sulfate and iron species were determined. Sulfate anions are the final stable sulfur species involved in the reaction pathway. Experiments showing complete Cr(VI) removal from solution displayed ratios [S(VI)]/[Fe](tot)<2, probably due to a deficit in aqueous sulfur species. Experiments showing incomplete Cr(VI) removal displayed ratios [Cr(VI)](removed)/[S(VI)] close to 1.5. This ratio was found to be consistent with the formation of thiosulfate (S(2)O(2-)(3)). Thiosulfate ions disproportionated into elemental sulfur S(0) and tetrathionate ions (S(4)O(2-)(6)) that were finally oxidized to sulfate anions under acidic conditions. The distribution of the oxidation state of sulfur atoms at the pyrite surface determined by XPS was additional evidence for the multistep sulfur oxidation process. The presence of elemental sulfur in the S(2p) spectra correlated well with the disproportion of thiosulfate under acidic conditions.

  3. Oxidation behavior of iron-chromium alloys at elevated temperatures: A reactive-element effect

    SciTech Connect

    Park, J.H.; Natesan, K.

    1992-03-01

    Oxidation tests were conducted on samples of Fe-25Cr, Fe-25Cr,-0.3-1.0Y, and Fe-25Cr-1Ce at temperatures of 700 to 1000{degrees}C and oxygen partial pressures of 1 to 20 atm for time periods of 19 to 160 h. In some tests, oxidized samples were quenched from test temperature to room temperature in {approximately}20 min to examine characteristics of the spallation scales. The results showed that the scales, even though of the same composition, spalled totally when developed on Fe-25Cr alloy, while those on Ce- and Y-containing alloys exhibited good scale adherence and no spallation. After removal of the spalled scales, specimens of Fe-25Cr alloy were reoxidized to gain insight into development and morphology of thermally grown scales and their spallation characteristics. The reoxidized samples formed complex scale layers that had iron oxide phase at the gas side of the interface; the scale layer was adherent and no spallation was noted. Experiments were conducted to evaluate the roles of alloy grain size and grain growth rate in development and spallation of oxide scales. Results showed that excessive alloy grain growth is the primary cause of spallation of thermally grown scales. Additions of reactive elements such as Y and Ce minimize alloy grain growth and thus improve the adhesion of scales to the substrate and virtually eliminate spallation.

  4. Removal of chromium(VI) and dye Alizarin Red S (ARS) using polymer-coated iron oxide (Fe3O4) magnetic nanoparticles by co-precipitation method

    NASA Astrophysics Data System (ADS)

    Hanif, Sara; Shahzad, Asma

    2014-06-01

    The present research was conducted with an aim to develop such adsorbent system: polymer-coated magnetic nanoparticles which can remove heavy metal and dye from water of different concentration. Synthesis of magnetic iron oxide nanoparticles for contaminated water purification has been one of the outcomes of application of rapidly growing field of Nanotechnology in Environmental Science. In the present study, the efficiency of magnetic nanoparticles for removal of Cr(VI) and dye (alizarin) from water solutions of known concentrations were evaluated. The nanoparticles were prepared by co-precipitation method and characterized by X-ray photoelectron spectroscopy, transmission electron microscopy, and Fourier transform infrared spectroscopy. Polymer-coated magnetic iron oxide nanoparticles carrying functional groups on their surface were synthesized by different methods for permanent magnet-assisted removal of heavy metal (chromium) and dye (Alizarin Red S) from water. The characterization showed that synthesized nanoparticles were in the size range of 10-50 nm. The adsorption capacities of the Fe3O4 using polyMETAC-coated particles for dye (Alizarin Red S) removal were 80-96 % and chromium 62-91 %. The chromium concentration was determined after magnetic separation using atomic absorption spectrophotometer and dye concentration was estimated with UV-visible spectrophotometer. Nanoparticles of polymer coated showed the highest removal capacity from water for metal and dye. The developed adsorbents had higher capacity for removal of heavy metal ions and dye.

  5. Occurrences, uses, and properties of chromium.

    PubMed

    Barnhart, J

    1997-08-01

    Chromium is the 21st most abundant element in the Earth's crust with a mean concentration in United States soils of about 40 mg/kg. Although it exists in several oxidation states, the zero, trivalent, and hexavalent states are the most important in commercial products and the environment. Nearly all naturally occurring chromium is in the trivalent state, usually in combination with iron or other metal oxides. Although only about 15% of the chromium mined is used in the manufacture of chemicals, most applications of chromium utilize the chemistry of chromium. For instance, the "stainless" nature of stainless steel is due to the chemical properties of the chromium oxides which form on the surface of the alloy. Similarly, the protective properties of chrome plating of metals, chromated copper arsenate (CCA) treatment of wood, and chrome tanning of leather are all dependent on chromium chemistry. The key to these uses is that under typical environmental and biological conditions of pH and oxidation-reduction potential, the most stable form of chromium is the trivalent oxide. This form has very low solubility and low reactivity resulting in low mobility in the environment and low toxicity in living organisms. In this paper the chemical properties of chromium are discussed for the major commercial products in the context of the Eh-pH diagram for chromium.

  6. Metal oxide semiconductor thin-film transistors for flexible electronics

    NASA Astrophysics Data System (ADS)

    Petti, Luisa; Münzenrieder, Niko; Vogt, Christian; Faber, Hendrik; Büthe, Lars; Cantarella, Giuseppe; Bottacchi, Francesca; Anthopoulos, Thomas D.; Tröster, Gerhard

    2016-06-01

    The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular

  7. Melting of thin films of alkanes on magnesium oxide

    NASA Astrophysics Data System (ADS)

    Arnold, T.; Barbour, A.; Chanaa, S.; Cook, R. E.; Fernandez-Canato, D.; Landry, P.; Seydel, T.; Yaron, P.; Larese, J. Z.

    2009-02-01

    Recent incoherent neutron scattering investigations of the dynamics of thin alkane films adsorbed on the Magnesium Oxide (100) surface are reported. There are marked differences in the behaviour of these films, as a function of temperature and coverage, compared to similar measurements on graphite. In particular, it has previously been shown that adsorbed multilayer films on graphite exhibit an interfacial solid monolayer that coexists with bulk-like liquid, well above the bulk melting point. In contrast, these studies show that the alkane films on MgO exhibit no such stabilization of the solid layer closest to the substrate as a function of the film thickness, even though the monolayer crystal structures are remarkably similar. These studies are supported by extensive thermodynamic data, a growing body of structural data from neutron diffraction and state of the art computer modelling

  8. Studies on nickel-tungsten oxide thin films

    SciTech Connect

    Usha, K. S.; Sivakumar, R.; Sanjeeviraja, C.

    2014-10-15

    Nickel-Tungsten oxide (95:5) thin films were prepared by rf sputtering at 200W rf power with various substrate temperatures. X-ray diffraction study reveals the amorphous nature of films. The substrate temperature induced decrease in energy band gap with a maximum transmittance of 71%1 was observed. The Micro-Raman study shows broad peaks at 560 cm{sup −1} and 1100 cm{sup −1} correspond to Ni-O vibration and the peak at 860 cm{sup −1} can be assigned to the vibration of W-O-W bond. Photoluminescence spectra show two peaks centered on 420 nm and 485 nm corresponding to the band edge emission and vacancies created due to the addition of tungsten, respectively.

  9. Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

    DOEpatents

    Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.; Lloyd, Matthew T.; Widjonarko, Nicodemus Edwin; Miedaner, Alexander; Curtis, Calvin J.; Ginley, David S.; Olson, Dana C.

    2017-01-10

    A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

  10. Chemical Strain Engineering of Magnetism in Oxide Thin Films.

    PubMed

    Copie, Olivier; Varignon, Julien; Rotella, Hélène; Steciuk, Gwladys; Boullay, Philippe; Pautrat, Alain; David, Adrian; Mercey, Bernard; Ghosez, Philippe; Prellier, Wilfrid

    2017-04-03

    Transition metal oxides having a perovskite structure form a wide and technologically important class of compounds. In these systems, ferroelectric, ferromagnetic, ferroelastic, or even orbital and charge orderings can develop and eventually coexist. These orderings can be tuned by external electric, magnetic, or stress field, and the cross-couplings between them enable important multifunctional properties, such as piezoelectricity, magneto-electricity, or magneto-elasticity. Recently, it has been proposed that additional to typical fields, the chemical potential that controls the concentration of ion vacancies in these systems may reveal an efficient alternative parameter to further tune their properties and achieve new functionalities. In this study, concretizing this proposal, the authors show that the control of the content of oxygen vacancies in perovskite thin films can indeed be used to tune their magnetic properties. Growing PrVO3 thin films epitaxially on an SrTiO3 substrate, the authors reveal a concrete pathway to achieve this effect. The authors demonstrate that monitoring the concentration of oxygen vacancies through the oxygen partial pressure or the growth temperature can produce a substantial macroscopic tensile strain of a few percent. In turn, this strain affects the exchange interactions, producing a nontrivial evolution of Néel temperature in a range of 30 K.

  11. Highly conductive grain boundaries in copper oxide thin films

    NASA Astrophysics Data System (ADS)

    Deuermeier, Jonas; Wardenga, Hans F.; Morasch, Jan; Siol, Sebastian; Nandy, Suman; Calmeiro, Tomás; Martins, Rodrigo; Klein, Andreas; Fortunato, Elvira

    2016-06-01

    High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu2O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu2O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu2O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.

  12. Oxidative Weathering of Earth's Surface 3.7 Billion Years ago? - A Chromium Isotope Perspective

    NASA Astrophysics Data System (ADS)

    Frei, R.; Crowe, S.; Bau, M.; Polat, A.; Fowle, D. A.; Døssing, L. N.

    2015-12-01

    The Great Oxidation Event signals the first large-scale oxygenation of the atmosphere roughly 2.4 Gyr ago. Geochemical signals diagnostic of oxidative weathering, however, extend as far back as 3.3-2.9 Gyr ago. 3.8-3.7 Gyr old rocks from Isua, Greenland stand as a deep time outpost, recording information on Earth's earliest surface chemistry and the low oxygen primordial biosphere. We find positive Cr isotope values (average δ53Cr = +0.05 +/- 0.10 permil; δ53Cr = (53Cr/52Cr)sample/(53Cr/52Cr)SRM 979 - 1) x 1000, where SRM 979 denotes Standard Reference Material 979 in both the Fe and Si-rich mesobands of 7 compositionally distinct quartz-magnetite and magnesian banded iron formation (BIF) samples collected from the eastern portion of the Isua BIF (Western Greenland). These postively fractioned Cr isotopes, relative to the igneous silicate Earth reservoir, in metamorphosed BIFs from Isua indicate oxidative Cr cycling 3.8-3.7 Gyr ago. We also examined the distribution of U, which is immobile in its reduced state but mobile when it is oxidized. Elevated U/Th ratios (mean U/Th ratio of 0.70 ± 0.29) in these BIFs relative to the contemporary crust, also signal oxidative mobilization of U. We suggest that reactive oxygen species (ROS) accumulated in Earth's surface environment inducing the oxidative weathering of rocks during the deposition of the Isua BIFs. The precise threshold atmospheric O2 concentrations for the induction of Cr isotope fractionation remain uncertain, but we argue that our data are consistent with the very low levels of oxygen or other ROS indicated by other proxies. Importantly, any trace of Cr that cycled through redox reactions on land would tend both to be heavy, and to mobilize into the contemporaneous run-off more readily than Cr weathered directly as Cr(III). Once having reached the oceans, this fractionated Cr would have been stripped from seawater by Fe (oxy)hydroxides formed during the deposition of BIFs from low oxygen oceans. The

  13. F2-Laser-Induced Modification of Aluminum Thin Films into Transparent Aluminum Oxide

    NASA Astrophysics Data System (ADS)

    Okoshi, Masayuki; Iwai, Kazufumi; Nojiri, Hidetoshi; Inoue, Narumi

    2012-12-01

    A vacuum-UV F2 laser of 157 nm wavelength induced strong oxidation of 10-nm-thick Al thin films, forming transparent Al2O3 on silica glass. The laser-induced modification occurred at the surface of Al thin films; consequently, the thickness of the formed Al2O3 thin films increased linearly with increasing number of F2 laser photons. The formation of equivalent-phase Al2O3 thin films was confirmed by X-ray photoelectron spectroscopy. The oxidation reaction in the laser-induced modification of 10-nm-thick Al thin films was slower than that for 20- and 60-nm-thick Al thin films. Morphological changes leading to the crystallization of the Al2O3 thin films were also observed when the thickness of Al thin films increased from 10 to 20 and 60 nm.

  14. Mechanical properties and oxidation and corrosion resistance of reduced-chromium 304 stainless steel alloys

    NASA Technical Reports Server (NTRS)

    Stephens, J. R.; Barrett, C. A.; Gyorgak, C. A.

    1979-01-01

    An experimental program was undertaken to identify effective substitutes for part of the Cr in 304 stainless steel as a method of conserving the strategic element Cr. Although special emphasis was placed on tensile properties, oxidation and corrosion resistance were also examined. Results indicate that over the temperature range of -196 C to 540 C the yield stress of experimental austenitic alloys with only 12 percent Cr compare favorably with the 18 percent Cr in 304 stainless steel. Oxidation resistance and in most cases corrosion resistance for the experimental alloys were comparable to the commercial alloy. Effective substitutes for Cr included Al, Mo, Si, Ti, and V, while Ni and Mn contents were increased to maintain an austenitic structure.

  15. Chromium removal by combining the magnetic properties of iron oxide with adsorption properties of carbon nanotubes.

    PubMed

    Gupta, V K; Agarwal, Shilpi; Saleh, Tawfik A

    2011-03-01

    The adsorption features of multiwall carbon nanotubes (MWCNTs) with the magnetic properties of iron oxides have been combined in a composite to produce a magnetic adsorbent. Composites of MWCNT/nano-iron oxide were prepared, and were characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and Fourier transform infrared spectroscopy (FTIR). XRD suggests that the magnetic phase formed is maghemite and/or magnetite. FESEM image shows nano-iron oxides attached to a network of MWCNTs. The adsorption capability of the composites was tested in batch and fixed bed modes. The composites have demonstrated a superior adsorption capability to that of activated carbon. The results also show that the adsorptions of Cr(III) on the composites is strongly dependent on contact time, agitation speed and pH, in the batch mode; and on flow rate and the bed thickness in the fixed bed mode. Along with the high surface area of the MWCNTs, the advantage of the magnetic composite is that it can be used as adsorbent for contaminants in water and can be subsequently controlled and removed from the medium by a simple magnetic process.

  16. Amperometric detection and electrochemical oxidation of aliphatic amines and ammonia on silver-lead oxide thin-film electrodes

    SciTech Connect

    Ge, Jisheng

    1996-01-08

    This thesis comprises three parts: Electrocatalysis of anodic oxygen-transfer reactions: aliphatic amines at mixed Ag-Pb oxide thin-film electrodes; oxidation of ammonia at anodized Ag-Pb eutectic alloy electrodes; and temperature effects on oxidation of ethylamine, alanine, and aquated ammonia.

  17. Microstructural Stability and Oxidation Resistance of 9-12 Chromium Steels at Elevated Temperatures

    SciTech Connect

    Dogan, O.N.; Alman, D.E.; Jablonski, P.D.; Hawk, J.A.

    2006-05-01

    Various martensitic 9-12 Cr steels are utilized currently in fossil fuel powered energy plants for their good elevated temperature properties such as creep strength, steam side oxidation resistance, fire side corrosion resistance, and thermal fatigue resistance. Need for further improvements on the properties of 9-12 Cr steels for higher temperature (>600oC) use is driven by the environmental concerns (i.e., improve efficiency to reduce emissions and fossil fuel consumption). In this paper, we will discuss the results of the research done to explore new subsitutional solute solution and precipitate hardening mechanisms for improved strength of 9-12 Cr martensitic steels. Stability of the phases present in the steels will be evaluated for various temperature and time exposures. A comparison of microstructural properties of the experimental steels and commercial steels will also be presented.

    The influence of a Ce surface treatment on oxidation behavior of a commercial (P91) and several experimental steels containing 9 to 12 weight percent Cr was examined at 650ºC in flowing dry and moist air. The oxidation behavior of all the alloys without the Ce modification was significantly degraded by the presence of moisture in the air during testing. For instance the weight gain for P91 was two orders of magnitude greater in moist air than in dry air. This was accompanied by a change in oxide scale from the formation of Cr-based scales in dry air to the formation of Fe-based scales in moist air. The Ce surface treatment was very effective in improving the oxidation resistance of the experimental steels in both moist and dry air. For instance, after exposure to moist air at 650ºC for 2000 hours, an experimental alloy with the cerium surface modification had a weight gain three orders of magnitude lower than the alloy without the Ce modification and two orders of magnitude lower than P91. The Ce surface treatment suppressed the formation of Fe-based scales and

  18. Groundwater contaminant by hexavalent chromium

    SciTech Connect

    Parsons, C.

    1995-11-01

    Oxidation of trivalent chromium to hexavalent chromium has been investigated as a function of total manganese in soils as well as various incubation conditions. Chromium and manganese contents were analyzed by atomic absorption (graphite furnace and flame emission respectively) following acid digestion. Total hexavalent chromium generation capacity was determined by addition of 0.001 M CrCL3, incubation, and analysis by s-diphenyl carbazide. Samples were then leached with CaSO{sub 4} and MgSO{sub 4} and incubated in various environments (oven, freeze-drier, field moist, ultrafreeze) to test for geogenic generation of Cr(IV). The degree of geogenic generation of hexavalent chromium was compared with total Mn and Cr content as well as hexavalent generational capacity.

  19. Laser patterning of very thin indium tin oxide thin films on PET substrates

    NASA Astrophysics Data System (ADS)

    McDonnell, C.; Milne, D.; Prieto, C.; Chan, H.; Rostohar, D.; O'Connor, G. M.

    2015-12-01

    This work investigates the film removal properties of 30 nm thick Indium Tin Oxide (ITO) thin films, on flexible polyethylene terephthalate (PET) substrates, using 355, 532 and 1064 nm nanosecond pulses (ns), and 343 and 1064 nm femtosecond pulses. The ablation threshold was found to be dependent on the applied wavelength and pulse duration. The surface topography of the laser induced features were examined using atomic force microscopy across the range of wavelengths and pulse durations. The peak temperature, strain and stress tensors were examined in the film and substrate during laser heating, using finite element computational methods. Selective removal of the thin ITO film from the polymer substrate is possible at all wavelengths except at 266 nm, were damage to substrate is observed. The damage to the substrate results in periodic surface structures (LIPPS) on the exposed PET, with a period of twice the incident wavelength. Fragmented crater edges are observed at all nanosecond pulse durations. Film removal using 1030 nm femtosecond pulses results in clean crater edges, however, minor 5 nm damage to the substrate is also observed. The key results show that film removal for ITO on PET, is through film de-lamination across all wavelengths and pulse durations. Film de-lamination occurs due to thermo-elastic stress at the film substrate interface region, as the polymer substrate expands under heating from direct laser absorption and heat conduction across the film substrate interface.

  20. Effect of chromium supplementation on the diabetes induced-oxidative stress in liver and brain of adult rats.

    PubMed

    Refaie, Fawzia M; Esmat, Amr Y; Mohamed, Aly F; Aboul Nour, Wael H

    2009-12-01

    This study was designed to investigate the susceptibility of liver and brain tissues, as insulinin-dependent tissues, of normal adult male rats to the oxidative challenge of subchronic supplementation with chromium picolinate (CrPic) at low (human equivalent) and high doses (2.90 and 13.20 μg Cr kg(-1) day(-1), respectively). Also, the modulative effect of CrPic administration on the enhanced oxidative stress in the liver and brain tissues of alloxan-diabetic rats was studied. Fasting serum glucose level was not modified in normal rats but significantly reduced in diabetic rats that had received CrPic supplement. A mild oxidative stress was observed in the liver and brain of CrPic-supplemented normal rats confirmed by the dose-dependent reductions in the levels of hepatic and cerebral free fatty acids, superoxide dismutase and glutathione peroxidase activities, and in contrast increased tissue malondialdehyde concentration. On the other hand, hepatic and cerebral catalase activity was reduced in the high dose group only. CrPic supplementation did not act as a peroxisome proliferator confirmed by the significant reductions in liver and brain peroxisomal palmitoyl CoA oxidase activity. The non significant alterations in liver protein/DNA and RNA/DNA ratios indicate that CrPic did not affect protein synthesis per cell, and that mild elevations in hepatic total protein and RNA concentrations might be due to block or decrease in the export rate of synthesized proteins from the liver to the plasma. In diabetic rats, elevated levels of hepatic and cerebral free fatty acids and malondialdehyde, and in contrast the overwhelmed antioxidant enzymes, were significantly modulated in the low dose group and near-normalized in the high dose group. The significant increases observed in liver total protein and RNA concentrations, as well as protein/DNA and RNA/ DNA ratios in diabetic rats supplemented with the high dose of Cr, compared to untreated diabetics, may be related to the

  1. Several braze filler metals for joining an oxide-dispersion-strengthened nickel-chromium-aluminum alloy

    NASA Technical Reports Server (NTRS)

    Gyorgak, C. A.

    1975-01-01

    An evaluation was made of five braze filler metals for joining an aluminum-containing oxide dispersion-strengthened (ODS) alloy, TD-NiCrAl. All five braze filler metals evaluated are considered suitable for joining TD-NiCrAl in terms of wettability and flow. Also, the braze alloys appear to be tolerant of slight variations in brazing procedures since joints prepared by three sources using three of the braze filler metals exhibited similar brazing characteristics and essentially equivalent 1100 C stress-rupture properties in a brazed butt-joint configuration. Recommendations are provided for brazing the aluminum-containing ODS alloys.

  2. Oxide nucleation on thin films of copper during in situ oxidation in an electron microscope

    NASA Technical Reports Server (NTRS)

    Heinemann, K.; Rao, D. B.; Douglass, D. L.

    1975-01-01

    Single-crystal copper thin films were oxidized at an isothermal temperature of 425 C and at an oxygen partial pressure of 0.005 torr. Specimens were prepared by epitaxial vapor deposition onto polished faces of rocksalt and were mounted in a hot stage inside the ultrahigh-vacuum chamber of a high-resolution electron microscope. An induction period of roughly 30 min was established which was independent of the film thickness but depended strongly on the oxygen partial pressure and to exposure to oxygen prior to oxidation. Neither stacking faults nor dislocations were found to be associated with the Cu2O nucleation sites. The experimental data, including results from oxygen dissolution experiments and from repetitive oxidation-reduction-oxidation sequences, fit well into the framework of an oxidation process involving the formation of a surface charge layer, oxygen saturation of the metal with formation of a supersaturated zone near the surface, and nucleation followed by surface diffusion of oxygen and bulk diffusion of copper for lateral and vertical oxide growth, respectively.

  3. Structure and Optical Properties of Nanocrystalline Hafnium Oxide Thin Films (PostPrint)

    DTIC Science & Technology

    2014-09-01

    AFRL-RX-WP-JA-2014-0214 STRUCTURE AND OPTICAL PROPERTIES OF NANOCRYSTALLINE HAFNIUM OXIDE THIN FILMS (POSTPRINT) Neil R. Murphy AFRL...OPTICAL PROPERTIES OF NANOCRYSTALLINE HAFNIUM OXIDE THIN FILMS (POSTPRINT) 5a. CONTRACT NUMBER In-House 5b. GRANT NUMBER 5c. PROGRAM ELEMENT...microstructure and optical constants is established. 15. SUBJECT TERMS hafnium oxide , sputter-deposition, structure, XRR, optical properties

  4. Chromium in aqueous nitrate plutonium process streams: Corrosion of 316 stainless steel and chromium speciation

    SciTech Connect

    Smith, W.H.; Purdy, G.M.

    1995-12-31

    This study was undertaken to determine if chromium(+6) could exist in plutonium process solutions under normal operating conditions. Four individual reactions were studied: the rate of dissolution of stainless steel, which is the principal source of chromium in process solutions; the rate of oxidation of chromium(+3) to chromium(+6) by nitric acid; and the reduction of chromium(+6) back to chromium(+3) by reaction with stainless steel and with oxalic acid. The stainless steel corrosion rate was found to increase with increasing nitric acid concentration, increasing hydrofluoric acid concentration, and increasing temperature. Oxidation of chromium(+3) to chromium(+6) was negligible at room temperature and only became significant in hot concentrated nitric acid. The rate of reduction of chromium(+6) back to chromium(+3) by reaction with stainless steel or oxalic acid was found to be much greater than the rate of the reverse oxidation reaction. Based on these findings and taking into account normal operating conditions, it was determined that although there would be considerable chromium in plutonium process streams it would rarely be found in the (+6) oxidation state and would not exist in the (+6) state in the final process waste solutions.

  5. Electrical and structural characterization of IZO (indium oxide-zinc oxide) thin films for device applications

    NASA Astrophysics Data System (ADS)

    Yaglioglu, Burag

    Materials for oxide-based transparent electronics have been recently reported in the literature. These materials include various amorphous and crystalline compounds based on multi-component oxides and many of them offer useful combinations of transparency, controllable carrier concentrations, and reasonable n-carrier mobility. In this thesis, the properties of amorphous and crystalline In2O3-10wt%ZnO, IZO, thin films were investigated for their potential use in oxide electronics. The room temperature deposition of this material using DC magnetron sputtering results in the formation of amorphous films. Annealing amorphous IZO films at 500°C in air produces a previously unknown crystalline compound. Using electron diffraction experiments, it is reported that the crystal structure of this compound is based on the high-pressure rhombohedral phase of In2O3. Electrical properties of different phases of IZO were explored and it was concluded that amorphous films offer most promising characteristics for device applications. Therefore, thin film transistors (TFT) were fabricated based on amorphous IZO films where both the channel and metallization layers were deposited from the same target. The carrier densities in the channel and source-drain layers were adjusted by changing the oxygen content in the sputter chamber during deposition. The resulting transistors operate as depletion mode n-channel field effect devices with high saturation mobilities.

  6. Relation of structure to mechanical properties of thin thoria dispersion strengthened nickel-chromium (TD-NiCr alloy sheet

    NASA Technical Reports Server (NTRS)

    Whittenberger, J. D.

    1975-01-01

    A study of the relation between structure and mechanical properties of thin TD-NiCr sheet indicated that the elevated temperature tensile, stress-rupture, and creep strength properties depend primarily on the grain aspect ratio and sheet thickness. In general, the strength properties increased with increasing grain aspect ratio and sheet thickness. Tensile testing revealed an absence of ductility at elevated temperatures. A threshold stress for creep appears to exist. Even small amounts of prior creep deformation at elevated temperatures can produce severe creep damage.

  7. Nickel oxide and molybdenum oxide thin films for infrared imaging prepared by biased target ion-beam deposition

    NASA Astrophysics Data System (ADS)

    Jin, Yao; Saint John, David; Jackson, Tom N.; Horn, Mark W.

    2014-06-01

    Vanadium oxide (VOx) thin films have been intensively used as sensing materials for microbolometers. VOx thin films have good bolometric properties such as low resistivity, high negative temperature coefficient of resistivity (TCR) and low 1/f noise. However, the processing controllability of VOx fabrication is difficult due to the multiple valence states of vanadium. In this study, metal oxides such as nickel oxide (NiOx) and molybdenum oxide (MoOx) thin films have been investigated as possible new microbolometer sensing materials with improved process controllability. Nickel oxide and molybdenum oxide thin films were prepared by reactive sputtering of nickel and molybdenum metal targets in a biased target ion beam deposition tool. In this deposition system, the Ar+ ion energy (typically lower than 25 eV) and the target bias voltage can be independently controlled since ions are remotely generated. A residual gas analyzer (RGA) is used to precisely control the oxygen partial pressure. A real-time spectroscopic ellipsometry is used to monitor the evolution of microstructure and properties of deposited oxides during growth and post-deposition. The properties of deposited oxide thin films depend on processing parameters. The resistivity of the NiOx thin films is in the range of 0.5 to approximately 100 ohm-cm with a TCR from -2%/K to -3.3%/K, where the resistivity of MoOx is between 3 and 2000 ohm-cm with TCR from -2.1%/K to -3.2%/K. We also report on the thermal stability of these deposited oxide thin films.

  8. Surface morphology and electrical transport of rapid thermal annealed chromium-doped indium zinc oxides: The influence of zinc interstitials and out-diffusion

    SciTech Connect

    Hsu, C. Y.

    2013-12-09

    We investigate the complex impedance (CI) spectra of chromium-doped indium zinc oxide (CIZO) films with different rapid thermal annealing (RTA) temperatures. The CI spectra drawn from the impedance contributions of Zn-O and In-O bondings in CIZO films were analyzed by two sets of parallel resistance and capacitance components in series. The result demonstrates that zinc interstitials controls electron concentration and transition of electrical transport from semiconducting to metallic. At higher RTA temperature, high-density zinc interstitial promotes Zn atom diffusion from the surface, modifying surface morphology.

  9. 57Fe- and 119Sn-Moessbauer Studies of Tin Doped Chromium Iron Oxides of Composition {alpha}-Cr2-xFexO3

    SciTech Connect

    Helgason, Oern; Berry, Frank J.; Ren Xiaolin; Moyo, Thomas

    2005-04-26

    Tin-doped iron chromium oxides of composition {alpha}-Cr2-xFexO3 prepared by the calcination of precipitates adopt the corundum-related structure. 57Fe Moessbauer spectroscopy shows the materials to be composed of small superparamagnetic particles and no evidence for a Morin transition was observed above 80K. The supertransferred hyperfine magnetic field at the tin site is shown by 119Sn Moessbauer spectroscopy to be less than that experienced in tin-doped {alpha}-Fe2O3.

  10. Chromium in the environment of Finland.

    PubMed

    Mukherjee, A B

    1998-06-30

    This paper focuses upon the use, import and release of chromium to the environment of Finland. In addition, the behavior of trivalent and hexavalent chromium in soils has been briefly reviewed. In Finland, consumption of chromium compounds occurs in the following pattern: stainless steel > leather tanning > metal plating > chemicals. The emission of chromium has decreased from 114 t in 1979 to 28 t in 1995. The highest release of chromium continues to be from ferrochromium and stainless steel plants. From these facilities, 85% of slag and dusts are used by a secondary facility to recover valuable metal. In the industrial areas, the oxidizing behavior of chromium (III) is still unknown. In this study, the leachability of chromium (VI) to ground water and its effects on terrestrial and aquatic species in Finland are discussed.

  11. Growth and Oxidation of Thin Film Al(2)Cu

    SciTech Connect

    SON,KYUNG-AH; MISSERT,NANCY A.; BARBOUR,J. CHARLES; HREN,J.J.; COPELAND,ROBERT GUILD; MINOR,KENNETH G.

    2000-01-18

    Al{sub 2}Cu thin films ({approx} 382 nm) are fabricated by melting and resolidifying Al/Cu bilayers in the presence of a {micro} 3 nm Al{sub 2}O{sub 3} passivating layer. X-ray Photoelectron Spectroscopy (XPS) measures a 1.0 eV shift of the Cu2p{sub 3/2} peak and a 1.6 eV shift of the valence band relative to metallic Cu upon Al{sub 2}Cu formation. Scanning Electron microscopy (SEM) and Electron Back-Scattered Diffraction (EBSD) show that the Al{sub 2}Cu film is composed of 30-70 {micro}m wide and 10-25 mm long cellular grains with (110) orientation. The atomic composition of the film as estimated by Energy Dispersive Spectroscopy (EDS) is 67 {+-} 2% Al and 33 {+-} 2% Cu. XPS scans of Al{sub 2}O{sub 3}/Al{sub 2}Cu taken before and after air exposure indicate that the upper Al{sub 2}Cu layers undergo further oxidation to Al{sub 2}O{sub 3} even in the presence of {approx} 5 nm Al{sub 2}O{sub 3}. The majority of Cu produced from oxidation is believed to migrate below the Al{sub 2}O{sub 3} layers, based upon the lack of evidence for metallic Cu in the XPS scans. In contrast to Al/Cu passivated with Al{sub 2}O{sub 3}, melting/resolidifying the Al/Cu bilayer without Al{sub 2}O{sub 3} results in phase-segregated dendritic film growth.

  12. P-channel thin film transistors using reduced graphene oxide

    NASA Astrophysics Data System (ADS)

    Chakraborty, S.; Resmi, A. N.; Renuka Devi, P.; Jinesh, K. B.

    2017-04-01

    Chemically reduced graphene oxide (rGO) samples with various degrees of reduction were prepared using hydrazine hydrate as the reducing agent. Scanning tunnelling microscope imaging shows that rGO contains rows of randomly distributed patches of epoxy groups. The local density of states of the rGO samples were mapped with scanning tunnelling spectroscopy, which shows that the bandgap in rGO originates from the epoxide regions itself. The Fermi level of the epoxide regions is shifted towards the valence band, making rGO locally p-type and a range of bandgaps from 0–2.2 eV was observed in these regions. Thin film transistors were fabricated using rGO as the channel layer. The devices show excellent output characteristics with clear saturation and gate dependence. The transfer characteristics show that rGO behaves as a p-type semiconductor; the devices exhibit an on/off ratio of 104, with a low-bias hole mobility of 3.9 cm2 V‑1 s‑1.

  13. P-channel thin film transistors using reduced graphene oxide.

    PubMed

    Chakraborty, S; Resmi, A N; Devi, P Renuka; Jinesh, K B

    2017-04-18

    Chemically reduced graphene oxide (rGO) samples with various degrees of reduction were prepared using hydrazine hydrate as the reducing agent. Scanning tunnelling microscope imaging shows that rGO contains rows of randomly distributed patches of epoxy groups. The local density of states of the rGO samples were mapped with scanning tunnelling spectroscopy, which shows that the bandgap in rGO originates from the epoxide regions itself. The Fermi level of the epoxide regions is shifted towards the valence band, making rGO locally p-type and a range of bandgaps from 0-2.2 eV was observed in these regions. Thin film transistors were fabricated using rGO as the channel layer. The devices show excellent output characteristics with clear saturation and gate dependence. The transfer characteristics show that rGO behaves as a p-type semiconductor; the devices exhibit an on/off ratio of 10(4), with a low-bias hole mobility of 3.9 cm(2) V(-1) s(-1).

  14. Thin film bismuth iron oxides useful for piezoelectric devices

    DOEpatents

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  15. Perpendicular Magnetic Anisotropy and Spin Glass-like Behavior in Molecular Beam Epitaxy Grown Chromium Telluride Thin Films.

    PubMed

    Roy, Anupam; Guchhait, Samaresh; Dey, Rik; Pramanik, Tanmoy; Hsieh, Cheng-Chih; Rai, Amritesh; Banerjee, Sanjay K

    2015-04-28

    Reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), vibrating sample magnetometry, and other physical property measurements are used to investigate the structure, morphology, magnetic, and magnetotransport properties of (001)-oriented Cr2Te3 thin films grown on Al2O3(0001) and Si(111)-(7×7) surfaces by molecular beam epitaxy. Streaky RHEED patterns indicate flat smooth film growth on both substrates. STM studies show the hexagonal arrangements of surface atoms. Determination of the lattice parameter from the atomically resolved STM image is consistent with the bulk crystal structures. Magnetic measurements show the film is ferromagnetic, having a Curie temperature of about 180 K, and a spin glass-like behavior was observed below 35 K. Magnetotransport measurements show the metallic nature of the film with a perpendicular magnetic anisotropy along the c-axis.

  16. Remediation of soils contaminated with chromium using citric and hydrochloric acids: the role of chromium fractionation in chromium leaching.

    PubMed

    Cheng, Shu-Fen; Huang, Chin-Yuan; Tu, Yao-Ting

    2011-01-01

    Acid washing is a common method for soil remediation, but is not always efficient for chromium-contaminated soil. Both soil particle size and the forms of chromium existing in the soil affect the efficiency of soil washing. Laboratory batch and column dissolution experiments were conducted to determine the efficiencies of citric and hydrochloric acids as agents to extract chromium from soils contaminated with chromium. The effects of soil particle size and chromium fractionation on Cr leaching were also investigated. About 90% of chromium in the studied soil existed either in residual form or bound to iron and manganese oxides, and Cr fraction distributions were similar for all soil particle sizes. Almost all exchangeable and carbonate-bound chromium was removed by washing once with 0.5 M HCl, whereas organic chromium was more effectively removed by washing with citric acid rather than with HCl solution of the same concentration. For chromium fractions that were either bound to Fe-Mn oxides or existed as residual forms, the efficiencies of acid washing were usually 20% or less, except for 0.5 M HCl solution, which had much higher efficiencies. Separation of the soil sample by particle size before the separate washing of the soil fractions had little improvement on the chromium removal.

  17. Thin copper oxide films prepared by ion beam sputtering with subsequent thermal oxidation: Application in chemiresistors

    NASA Astrophysics Data System (ADS)

    Horak, P.; Bejsovec, V.; Vacik, J.; Lavrentiev, V.; Vrnata, M.; Kormunda, M.; Danis, S.

    2016-12-01

    Copper oxide films were prepared by thermal oxidation of thin Cu films deposited on substrates by ion beam sputtering. The subsequent oxidation was achieved in the temperature range of 200 °C-600 °C with time of treatment from 1 to 7 h (with a 1-h step) in a furnace open to air. At temperatures 250 °C-600 °C, the dominant phase formed was CuO, while at 200 °C mainly the Cu2O phase was identified. However, the oxidation at 200 °C led to a more complicated composition - in the depth Cu2O phase was observed, though in the near-surface layer the CuO dominant phase was found with a significant presence of Cu(OH)2. A limited amount of Cu2O was also found in samples annealed at 600 °C. The sheet resistance RS of the as-deposited Cu sample was 2.22 Ω/□, after gradual annealing RS was measured in the range 2.64 MΩ/□-2.45 GΩ/□. The highest RS values were obtained after annealing at 300 °C and 350 °C, respectively. Oxygen depth distribution was studied using the 16O(α,α) nuclear reaction with the resonance at energy 3032 keV. It was confirmed that the higher oxidation degree of copper is located in the near-surface region. Preliminary tests of the copper oxide films as an active layer of a chemiresistor were also performed. Hydrogen and methanol vapours, with a concentration of 1000 ppm, were detected by the sensor at an operating temperature of 300 °C and 350 °C, respectively. The response of the sensors, pointed at the p-type conductivity, was improved by the addition of thin Pd or Au catalytic films to the oxidic film surface. Pd-covered films showed an increased response to hydrogen at 300 °C, while Au-covered films were more sensitive to methanol vapours at 350 °C.

  18. Perovskite Oxide Thin Film Growth, Characterization, and Stability

    NASA Astrophysics Data System (ADS)

    Izumi, Andrew

    Studies into a class of materials known as complex oxides have evoked a great deal of interest due to their unique magnetic, ferroelectric, and superconducting properties. In particular, materials with the ABO3 perovskite structure have highly tunable properties because of the high stability of the structure, which allows for large scale doping and strain. This also allows for a large selection of A and B cations and valences, which can further modify the material's electronic structure. Additionally, deposition of these materials as thin films and superlattices through techniques such as pulsed laser deposition (PLD) results in novel properties due to the reduced dimensionality of the material. The novel properties of perovskite oxide heterostructures can be traced to a several sources, including chemical intermixing, strain and defect formation, and electronic reconstruction. The correlations between microstructure and physical properties must be investigated by examining the physical and electronic structure of perovskites in order to understand this class of materials. Some perovskites can undergo phase changes due to temperature, electrical fields, and magnetic fields. In this work we investigated Nd0.5Sr 0.5MnO3 (NSMO), which undergoes a first order magnetic and electronic transition at T=158K in bulk form. Above this temperature NSMO is a ferromagnetic metal, but transitions into an antiferromagnetic insulator as the temperature is decreased. This rapid transition has interesting potential in memory devices. However, when NSMO is deposited on (001)-oriented SrTiO 3 (STO) or (001)-oriented (LaAlO3)0.3-(Sr 2AlTaO6)0.7 (LSAT) substrates, this transition is lost. It has been reported in the literature that depositing NSMO on (110)-oriented STO allows for the transition to reemerge due to the partial epitaxial growth, where the NSMO film is strained along the [001] surface axis and partially relaxed along the [11¯0] surface axis. This allows the NSMO film enough

  19. p-Channel oxide thin film transistors using solution-processed copper oxide.

    PubMed

    Kim, Sang Yun; Ahn, Cheol Hyoun; Lee, Ju Ho; Kwon, Yong Hun; Hwang, Sooyeon; Lee, Jeong Yong; Cho, Hyung Koun

    2013-04-10

    Cu2O thin films were synthesized on Si (100) substrate with thermally grown 200-nm SiO2 by sol-gel spin coating method and postannealing under different oxygen partial pressure (0.04, 0.2, and 0.9 Torr). The morphology of Cu2O thin films was improved through N2 postannealing before O2 annealing. Under relatively high oxygen partial pressure of 0.9 Torr, the roughness of synthesized films was increased with the formation of CuO phase. Bottom-gated copper oxide (CuxO) thin film transistors (TFTs) were fabricated via conventional photolithography, and the electrical properties of the fabricated TFTs were measured. The resulting Cu2O TFTs exhibited p-channel operation, and field effect mobility of 0.16 cm2/(V s) and on-to-off drain current ratio of ∼1×10(2) were observed in the TFT device annealed at PO2 of 0.04 Torr. This study presented the potential of the solution-based process of the Cu2O TFT with p-channel characteristics for the first time.

  20. Surface and sub-surface thermal oxidation of thin ruthenium films

    NASA Astrophysics Data System (ADS)

    Coloma Ribera, R.; van de Kruijs, R. W. E.; Kokke, S.; Zoethout, E.; Yakshin, A. E.; Bijkerk, F.

    2014-09-01

    A mixed 2D (film) and 3D (nano-column) growth of ruthenium oxide has been experimentally observed for thermally oxidized polycrystalline ruthenium thin films. Furthermore, in situ x-ray reflectivity upon annealing allowed the detection of 2D film growth as two separate layers consisting of low density and high density oxides. Nano-columns grow at the surface of the low density oxide layer, with the growth rate being limited by diffusion of ruthenium through the formed oxide film. Simultaneously, with the growth of the columns, sub-surface high density oxide continues to grow limited by diffusion of oxygen or ruthenium through the oxide film.

  1. Surface and sub-surface thermal oxidation of thin ruthenium films

    SciTech Connect

    Coloma Ribera, R.; Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F.; Kokke, S.; Zoethout, E.

    2014-09-29

    A mixed 2D (film) and 3D (nano-column) growth of ruthenium oxide has been experimentally observed for thermally oxidized polycrystalline ruthenium thin films. Furthermore, in situ x-ray reflectivity upon annealing allowed the detection of 2D film growth as two separate layers consisting of low density and high density oxides. Nano-columns grow at the surface of the low density oxide layer, with the growth rate being limited by diffusion of ruthenium through the formed oxide film. Simultaneously, with the growth of the columns, sub-surface high density oxide continues to grow limited by diffusion of oxygen or ruthenium through the oxide film.

  2. Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

    2016-06-01

    We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ~ 4.1 Å), and low electrical resistivity (4.2 × 10-4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained "on/off" current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 × 107, 0.43 V/decade, 0.7 V, and 2.1 cm2/V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs.

  3. Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications

    NASA Astrophysics Data System (ADS)

    Wang, Shuyu; Yu, Shifeng; Lu, Ming; Liu, Mingzhao; Zuo, Lei

    2017-04-01

    Here we report the enhancement in the temperature coefficient of resistance (TCR) of atomic layer-deposited vanadium oxide thin films through the doping of titanium oxide. The Hall effect measurement provides a potential explanation for the phenomenon. The composition and morphology of the thin films are investigated by x-ray diffraction and scanning electron microscopy techniques. The high TCR, good uniformity, and low processing temperature of the material make it a good candidate for thermistor application.

  4. Interface properties of thin oxide layers grown on strained SiGe layers at low temperatures

    NASA Astrophysics Data System (ADS)

    Mukhopadhyay, M.; Ray, S. K.; Ghosh, T. B.; Sreemany, M.; Maiti, C. K.

    1996-03-01

    The chemical state and the electrical properties of the interfaces of thin oxide films grown on strained 0268-1242/11/3/014/img8 layers using plasma and thermal oxidation have been studied in detail. X-ray photoelectron spectroscopy studies show no Ge pile-up at the oxide/substrate interface. In the case of plasma oxidation, Ge at the oxide surface is found to be in a fully oxidized state, while the formation of an intermediate oxidized state is observed in the case of low-temperature thermal oxidation. High-frequency (1 MHz) capacitance - voltage (C - V) and conductance - voltage (G - V) measurements have indicated the growth of good quality gate oxides. The fixed oxide charge and interface state densities are comparable to those of low-temperature-grown metal - oxide - semiconductor capacitors on Si with aluminium gates.

  5. Nano-oxide thin films deposited via atomic layer deposition on microchannel plates.

    PubMed

    Yan, Baojun; Liu, Shulin; Heng, Yuekun

    2015-01-01

    Microchannel plate (MCP) as a key part is a kind of electron multiplied device applied in many scientific fields. Oxide thin films such as zinc oxide doped with aluminum oxide (ZnO:Al2O3) as conductive layer and pure aluminum oxide (Al2O3) as secondary electron emission (SEE) layer were prepared in the pores of MCP via atomic layer deposition (ALD) which is a method that can precisely control thin film thickness on a substrate with a high aspect ratio structure. In this paper, nano-oxide thin films ZnO:Al2O3 and Al2O3 were prepared onto varied kinds of substrates by ALD technique, and the morphology, element distribution, structure, and surface chemical states of samples were systematically investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and X-ray photoemission spectroscopy (XPS), respectively. Finally, electrical properties of an MCP device as a function of nano-oxide thin film thickness were firstly studied, and the electrical measurement results showed that the average gain of MCP was greater than 2,000 at DC 800 V with nano-oxide thin film thickness approximately 122 nm. During electrical measurement, current jitter was observed, and possible reasons were preliminarily proposed to explain the observed experimental phenomenon.

  6. Physical properties in thin films of iron oxides.

    SciTech Connect

    Uribe, J. D.; Osorio, J.; Barrero, C. A.; Girata, D.; Morales, A. L.; Hoffmann, A.; Materials Science Division; Univ. de Antioquia

    2008-01-01

    We have grown hematite ({alpha}-Fe{sub 2}O{sub 3}) thin films on stainless steel substrates and magnetite (Fe{sub 3}O{sub 4}) thin films on (0 0 1)-Si single crystal substrates by a RF magnetron sputtering process. {alpha}-Fe{sub 2}O{sub 3} thin films were grown in an Ar atmosphere at substrate temperatures around 400 C, and Fe{sub 3}O{sub 4} thin films in an Ar/O{sub 2} reactive atmosphere at substrate temperatures around 500 C. Conversion electron Moessbauer (CEM) spectra of {alpha}-Fe{sub 2}O{sub 3} thin films exhibit values for hyperfine parameter characteristic of the hematite stoichiometric phase in the weak ferromagnetic state [R.E. Vandenberghe, in: Moessbauer Spectroscopy and Applications in Geology, University Gent, Belgium, 1990. [1

  7. Nickel oxide thin film from electrodeposited nickel sulfide thin film: peroxide sensing and photo-decomposition of phenol.

    PubMed

    Jana, Sumanta; Samai, Subhasis; Mitra, Bibhas C; Bera, Pulakesh; Mondal, Anup

    2014-09-14

    A novel non-enzymatic peroxide sensor has been constructed by using nickel oxide (NiO) thin films as sensing material, which were prepared by a two-step process: (i) electrodeposition of nickel sulfide (NiS) and (ii) thermal air oxidation of as-deposited NiS to NiO. The resultant material is highly porous and comprises interconnected nanofibers. UV-Vis spectroscopy, FTIR spectroscopy, X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM) were used for a complete characterization of nanostructured NiO thin films. Cyclic voltammetry study shows that NiO/ITO electrode facilitates the oxidation of hydrogen peroxide and exhibits excellent catalytic activity towards its sensing. The amperometric study of NiO/ITO was carried out to determine the sensitivity, linear range, detection limit of the proposed sensor. The sensor exhibits prominent electrocatalytic activity toward the oxidation of H2O2 with a wide linear range and a low detection limit. The possible use of the synthesized NiO thin films as an effective photocatalyst for the decomposition of phenol is also discussed.

  8. Assessing the antimicrobial activity of zinc oxide thin films using disk diffusion and biofilm reactor

    NASA Astrophysics Data System (ADS)

    Gittard, Shaun D.; Perfect, John R.; Monteiro-Riviere, Nancy A.; Wei, Wei; Jin, Chunming; Narayan, Roger J.

    2009-03-01

    The electronic and chemical properties of semiconductor materials may be useful in preventing growth of microorganisms. In this article, in vitro methods for assessing microbial growth on semiconductor materials will be presented. The structural and biological properties of silicon wafers coated with zinc oxide thin films were evaluated using atomic force microscopy, X-ray photoelectron spectroscopy, and MTT viability assay. The antimicrobial properties of zinc oxide thin films were established using disk diffusion and CDC Biofilm Reactor studies. Our results suggest that zinc oxide and other semiconductor materials may play a leading role in providing antimicrobial functionality to the next-generation medical devices.

  9. Effect of substrate temperature on structural and electrical properties of RF sputtered hafnium oxide thin films

    SciTech Connect

    Das, K. C.; Ghosh, S. P.; Tripathy, N.; Kar, J. P.; Bose, G.; Lee, T.; Myoung, J. M.

    2015-06-24

    In this work hafnium oxide thin films were deposited on p-type silicon substrate by Radio frequency magnetron sputtering at different substrate temperature ranging from room temperature to 300 °C. The structural and electrical properties of the sputtered films were investigated by x-ray diffraction, capacitance-voltage and current-voltage measurements. The XRD results show the formation monoclinic structure of the hafnium oxide thin films. The shifting of C-V curves towards negative voltage side depicts the increase in positive oxide charges with the rise of substrate temperature. Leakage current was found increased, when temperature enhanced from room temperature to 300 °C.

  10. Novel Low Temperature Processing for Enhanced Properties of Ion Implanted Thin Films and Amorphous Mixed Oxide Thin Film Transistors

    NASA Astrophysics Data System (ADS)

    Vemuri, Rajitha

    This research emphasizes the use of low energy and low temperature post processing to improve the performance and lifetime of thin films and thin film transistors, by applying the fundamentals of interaction of materials with conductive heating and electromagnetic radiation. Single frequency microwave anneal is used to rapidly recrystallize the damage induced during ion implantation in Si substrates. Volumetric heating of the sample in the presence of the microwave field facilitates quick absorption of radiation to promote recrystallization at the amorphous-crystalline interface, apart from electrical activation of the dopants due to relocation to the substitutional sites. Structural and electrical characterization confirm recrystallization of heavily implanted Si within 40 seconds anneal time with minimum dopant diffusion compared to rapid thermal annealed samples. The use of microwave anneal to improve performance of multilayer thin film devices, e.g. thin film transistors (TFTs) requires extensive study of interaction of individual layers with electromagnetic radiation. This issue has been addressed by developing detail understanding of thin films and interfaces in TFTs by studying reliability and failure mechanisms upon extensive stress test. Electrical and ambient stresses such as illumination, thermal, and mechanical stresses are inflicted on the mixed oxide based thin film transistors, which are explored due to high mobilities of the mixed oxide (indium zinc oxide, indium gallium zinc oxide) channel layer material. Semiconductor parameter analyzer is employed to extract transfer characteristics, useful to derive mobility, subthreshold, and threshold voltage parameters of the transistors. Low temperature post processing anneals compatible with polymer substrates are performed in several ambients (oxygen, forming gas and vacuum) at 150 °C as a preliminary step. The analysis of the results pre and post low temperature anneals using device physics fundamentals

  11. Fully transparent thin film transistors based on zinc oxide channel layer and molybdenum doped indium oxide electrodes

    NASA Astrophysics Data System (ADS)

    MÄ dzik, Mateusz; Elamurugu, Elangovan; Viegas, Jaime

    2016-03-01

    In this work we report the fabrication of thin film transistors (TFT) with zinc oxide channel and molybdenum doped indium oxide (IMO) electrodes, achieved by room temperature sputtering. A set of devices was fabricated, with varying channel width and length from 5μm to 300μm. Output and transfer characteristics were then extracted to study the performance of thin film transistors, namely threshold voltage and saturation current, enabling to determine optimal fabrication process parameters. Optical transmission in the UV-VIS-IR are also reported.

  12. Role of a silicate phase in the reduction of iron and chromium and their oxidation with carbide formation during the manufacture of carbon ferrochrome

    NASA Astrophysics Data System (ADS)

    Roshchin, V. E.; Roshchin, A. V.; Akhmetov, K. T.; Salikhov, S. P.

    2016-11-01

    The reactions of reduction of chromium and iron from chromospinelide and the reactions of carbide formation from the reduced metals are separated in space in experiments performed on ore grains with an artificially applied silicate shell. It is found that the silicate layer that isolates spinelide fro direct contact with carbon takes part in the reactions of both reduction and carbide formation. Free carbon extracts oxygen anions from the layer at the contact surface with the formation of CO, and the forming anion vacancies transfer "excess" electrons to the iron and chromium cations in the spinelide lattice and reduce them. Free and carbide-fixed carbon extracts iron and chromium cations from the silicate layer, and carbides form on the surface. The cation vacancies and electron holes (high-charge cations) that form in the silicate phase under these conditions are involved in the oxidation of the metal reduced in spinelide and cause its dissolution in the silicate phase and the precipitation of lower carbides on the surface of the silicate phase. The structure that is characterized of carbon ferrochrome forms on the surface of the silicate phase. Carbide formation is slower than reduction because of higher energy consumed for the formation of high-charge cations and the transfer of cations from the spinelide volume to the outer surface of the silicate phase. In the absence of a silicate layer, a carbide shell blocks the contact of carbon with oxides, which leads to the stop of reduction and, then, carbide formation. In the presence of a silicate (slag) shell around a spinelide grain, the following two concentration galvanic cells operate in parallel: an oxygen (reduction) cell and a metal (oxidation) cell. The parallel operation of the two galvanic cells with a common electrolyte (silicate phase) results in a decrease in the electric potentials between spinelide inside the silicate phase and carbon and carbides on its surface, and each of the processes is

  13. Measurement of faradaic current during AFM local oxidation of magnetic metal thin films

    NASA Astrophysics Data System (ADS)

    Takemura, Yasushi; Shimada, Yasuyuki; Watanabe, Genta; Yamada, Tsutomu; Shirakashi, Jun-ichi

    2007-04-01

    Faradaic current during a local oxidation using an atomic force microscope was studied. The intensity of the measured faradaic current was increased with increasing bias voltage applied to a cantilever, resulting in fabrication of larger size of nano-oxide structures on Si substrates. On the other hand, an excess current (over current) that was considered not to contribute the oxidation reaction was observed noticeably in the local oxidation of NiFe thin films. It was found that the excess current could be suppressed by depositing insulating oxide layers on the surfaces. The surface oxide layers were also advantageous for stable existence of meniscus promoting the local oxidation because of their hydrophilic properties. This method of capped oxide layers is significant for stable performance of the local oxidation technique fabricating nanostructures and nano-devices.

  14. Electrocatalytic Oxidation of Alcohols on Cu2O/Cu Thin Film Electrodeposited on Titanium Substrate

    NASA Astrophysics Data System (ADS)

    Bezghiche-Imloul, T.; Hammache-Makhloufi, H.; Ait Ahmed, N.

    2016-05-01

    A novel class of nanomaterials consisting of a composite thin film of cooper metal nanoparticles and cuprous oxide (Cu2O/Cu) for the catalytic electrooxidation of methanol, ethanol and ethylene glycol is considered here. The material was prepared by electrochemical deposition under a potentiostatic condition of -250mV vs saturated calomel electrode (SCE) from acetate bath at titanium substrate. The effect of electrodeposition time on the structure, composition and morphology of the deposit was investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results indicated the formation of pure cuprous oxide Cu2O thin film at low electrodeposition time (5 min) and Cu2O oxide thin film decorated with Cu nanoparticles (Cu2O/Cu) at high electrodeposition time. The obtained Cu2O and Cu2O/Cu thin films were explored for the electrochemical oxidation of alcohols in 1 M NaOH alkaline medium using cyclic voltammetry (CV) method. The Cu2O/Cu thin film grown at electrodeposition time of 15 min shows the best electrocatalytic performance toward ethanol oxidation. The effect of concentration of alcohols on the oxidation reaction was studied by CV and chronoamperometry. It was found that the reaction is governed by an irreversible diffusion process. The promising electrocatalytic activity of the Cu2O/Cu electrode provides a new platform for the fabrication of high-performance thin films for alcohols oxidation in alkaline medium. Therefore, the Cu2O/Cu electrode is a suitable as a less expensive electrocatalyst for alcohols oxidation.

  15. Evaluation of Characterization Techniques for Iron Pipe Corrosion Products and Iron Oxide Thin Films

    SciTech Connect

    Borch, Thomas; Camper, Anne K.; Biederman, Joel A.; Butterfield, Phillip; Gerlach, Robin; Amonette, James E.

    2008-10-01

    A common problem faced by drinking water studies is that of properly characterizing the corrosion products (CP) in iron pipescor synthetic Fe (hydr)oxides used to simulate the iron pipe used in municipal drinking-water systems. The present work compares the relative applicability of a suite of imaging and analytical techniques for the characterization of CPs and synthetic Fe oxide thin films and provide an overview of the type of data that each instrument can provide as well as their limitations to help researchers and consultants choose the best technique for a given task. Crushed CP from a water distribution system and synthetic Fe oxide thin films formed on glass surfaces were chosen as test samples for this evaluation. The CP and synthetic Fe oxide thin films were analyzed by atomic force microscopy (AFM), scanning electron microscopy (SEM), energy-dispersive spectroscopy, time-of-flight secondary ion mass spectrometry (ToF-SIMS), X-ray powder diffractometry (XRD), grazing incident diffractometry (GID), transmission electron microscopy (TEM), selected area electron diffraction, X-ray photoelectron spectroscopy (XPS), Fourier transform infrared, Mössbauer spectroscopy, Brunauer-Emmett-Teller N2 adsorption and Fe concentration was determined by the ferrozine method. XRD and GID were found to be the most suitable techniques for identification of the mineralogical composition of CP and synthetic Fe oxide thin films, respectively. AFM and a combined ToF-SIMS-AFM approach proved excellent for roughness and depth profiling analysis of synthetic Fe oxide thin films, respectively. Corrosion products were difficult to study by AFM due to their surface roughness, while synthetic Fe oxide thin films resisted most spectroscopic methods due to their limited thickness (118 nm). XPS analysis is not recommended for mixtures of Fe (hydr)oxides due to their spectral similarities. SEM and TEM provided great detail on mineralogical morphology.

  16. Parallel writing on zirconium nitride thin films by local oxidation nanolithography

    NASA Astrophysics Data System (ADS)

    Farkas, N.; Comer, J. R.; Zhang, G.; Evans, E. A.; Ramsier, R. D.; Wight, S.; Dagata, J. A.

    2004-12-01

    Parallel pattern transfer of submicrometer-scale oxide features onto zirconium nitride thin films is reported. The oxidation reaction was verified by Auger microprobe analysis and secondary ion mass spectrometry. Oxide features of ˜70nm in height can be formed and selectively etched in a dilute aqueous hydrogen fluoride solution. This provides an interesting route to potential new applications for high-melting point, biocompatible surfaces that possess small feature sizes with controlled geometries.

  17. Reduction of hexavalent chromium collected on PVC filters.

    PubMed

    Shin, Y C; Paik, N W

    2000-01-01

    Chromium exists at various valences, including elemental, trivalent, and hexavalent chromium, and undergoes reduction-oxidation reactions in the environment. Since hexavalent chromium is known as a human carcinogen, it is most important to evaluate the oxidation-reduction characteristics of the hexavalent chromium species. Although hexavalent chromium can be reduced to trivalent state, the detailed information on this in workplace environments is limited. The purpose of this study was to investigate hexavalent chromium reduction in time in various conditions. A pilot chrome plating operation was prepared and operated in a laboratory for this study. There was evidence that the hexavalent chromium was reduced by time after mist generation. The percentage ratio (with 95% confidence intervals in parentheses) of hexavalent chromium to total chromium was almost 100% (99.1 approximately 102.3) immediately after mist generation, and was reduced to 87.4% (84.8 approximately 89.9) at 1 hour and 81.0% (78.3 approximately 83.5) at 2 hours, respectively. Another test indicated that hexavalent chromium collected on PVC filters was also reduced by time after sampling. Hexavalent chromium was reduced to 90.8% (88.2 approximately 93.3) at 2 hours after sampling. It also was found that hexavalent chromium was reduced during storage in air. It is recommended that air samples of hexavalent chromium be protected against reduction during storage.

  18. Ultra-thin resistive switching oxide layers self-assembled by field-induced oxygen migration (FIOM) technique

    PubMed Central

    Lee, Sangik; Hwang, Inrok; Oh, Sungtaek; Hong, Sahwan; Kim, Yeonsoo; Nam, Yoonseung; Lee, Keundong; Yoon, Chansoo; Kim, Wondong; Park, Bae Ho

    2014-01-01

    High-performance ultra-thin oxide layers are required for various next-generation electronic and optical devices. In particular, ultra-thin resistive switching (RS) oxide layers are expected to become fundamental building blocks of three-dimensional high-density non-volatile memory devices. Until now, special deposition techniques have been introduced for realization of high-quality ultra-thin oxide layers. Here, we report that ultra-thin oxide layers with reliable RS behavior can be self-assembled by field-induced oxygen migration (FIOM) at the interface of an oxide-conductor/oxide-insulator or oxide-conductor/metal. The formation via FIOM of an ultra-thin oxide layer with a thickness of approximately 2–5 nm and 2.5% excess oxygen content is demonstrated using cross-sectional transmission electron microscopy and secondary ion mass spectroscopy depth profile. The observed RS behavior, such as the polarity dependent forming process, can be attributed to the formation of an ultra-thin oxide layer. In general, as oxygen ions are mobile in many oxide-conductors, FIOM can be used for the formation of ultra-thin oxide layers with desired properties at the interfaces or surfaces of oxide-conductors in high-performance oxide-based devices. PMID:25362933

  19. [Bioremediation of chromium (VI) contaminated site by reduction and microbial stabilization of chromium].

    PubMed

    Zheng, Jia-Chuan; Zhang, Jian-Rong; Liu, Xi-Wen; Xu, Qian; Shi, Wei-Lin

    2014-10-01

    Chromium (VI) contaminated soil samples were collected from a chemical plant in Suzhou. Firstly, the reduced soil was prepared by adding reagent (Stone-sulfure reagent) into polluted soil to transfer most chromium (VI) into chromium (III), then a nutrient solution was introduced into the reduced soil, and the stabilized soil was obtained after 60 days culturing. The chromium (VI) content of the three kinds of soil was analyzed. The results showed that the chromium (VI) content in toxicity characteristic leaching liquid (TCLL) dropped by 96. 8% (from 8.26 mg · L(-1) to 0.26 mg · L(-1)), and the total chromium content dropped by 95.7% (from 14.66 mg · L(-1) to 0.63 mg · L(-1)) after bioremediation in 5% nutrient solution. Additionally, the durability of chromium stabilization was tested by potassium permanganate oxidation and sterilization of microbe-treated soil. After oxidation, the chromium (VI) content in TCLL of the reduced soil was increased from 8.26 mg · L(-1) to 14.68 mg · L(-1). However, the content after bioremediation was decreased to 2.68 mg · L(-1). The results of sterilization demonstrated that the death of microbe had no significant effect on the stabilization of chromium. Consequently, the research in this paper demonstrated the feasibility of bioremediation of chromium (VI) polluted soil through reduction followed by stabilization/soilidification, and provided a technique with low cost but high efficiency.

  20. Preparation and Optical Properties of Zirconium-Titanium-Oxide Thin Films by Reactive Sputtering

    NASA Astrophysics Data System (ADS)

    Matsumoto, Hironaga; Sekine, Masato; Miura, Noboru; Nakano, Ryotaro; Matsumoto, Setsuko

    2005-02-01

    Zirconium-titanium-oxide thin films were prepared by multi-target rf reactive sputtering using metallic targets of zirconium and titanium. The compositional ratio of zirconium to titanium in the thin films was precisely controlled through rf power. Zirconium and titanium in the thin films were found to exist as mixtures of chemically bonded ZrO2 and TiO2 from XPS spectra. The zirconium-titanium-oxide thin films with compositional ratio x<0.42 were identified to have a tetragonal crystal structure, whereas those with x≥q 0.42 were identified to be in the amorphous state. The refractive index of the zirconium-titanium-oxide thin film at a wavelength of 550 nm changed from 2.25 to 2.55 according to compositional ratio x, and the dispersion of the refractive index was analyzed using the Lorentz oscillator model with four oscillators. It was clarified that the estimated oscillator energies E1 (10.5 eV) and E2 (6.5 eV) correspond to zirconium oxide, and that E3 (5.5 eV) and E4 (4.3 eV) correspond to titanium oxide from fundamental absorption spectra and photoconductivity.

  1. Thermochemical hydrogen generation of indium oxide thin films

    NASA Astrophysics Data System (ADS)

    Lim, Taekyung; Ju, Sanghyun

    2017-03-01

    Development of alternative energy resources is an urgent requirement to alleviate current energy constraints. As such, hydrogen gas is gaining attention as a future alternative energy source to address existing issues related to limited energy resources and air pollution. In this study, hydrogen generation by a thermochemical water-splitting process using two types of In2O3 thin films was investigated. The two In2O3 thin films prepared by chemical vapor deposition (CVD) and sputtering deposition systems contained different numbers of oxygen vacancies, which were directly related to hydrogen generation. The as-grown In2O3 thin film prepared by CVD generated a large amount of hydrogen because of its abundant oxygen vacancies, while that prepared by sputtering had few oxygen vacancies, resulting in low hydrogen generation. Increasing the temperature of the In2O3 thin film in the reaction chamber caused an increase in hydrogen generation. The oxygen-vacancy-rich In2O3 thin film is expected to provide a highly effective production of hydrogen as a sustainable and efficient energy source.

  2. Kinetic and mechanism of the oxidation of chromium(III) complex with anthranil- N, N-diacetic acid by periodate ion in acidic aqueous solutions

    NASA Astrophysics Data System (ADS)

    Ali, Ismat H.

    2015-06-01

    The kinetics of oxidation of [CrIII(atda)(H2O)2] (atda = anthranil- N, N-diacetato) complex by IO{4/-} was studied spectrophotometrically in aqueous solutions with pH range 2.20-3.34, 0.30 M ionic strength and in 20.0-40.0°C temperature range. The rate law of the reaction exhibited saturation kinetics. Values of the rate constant for the electron transfer process, the equilibrium constant for dissociation of [CrIII (atda)(H2O)2] to [CrIII (atda) (H2O)OH]+ + H+ and the pre-equilibrium formation constant were calculated. The thermodynamic activation parameters are reported. It is proposed that electron transfer proceeds through an inner-sphere mechanism via coordination of the IVII to chromium(III).

  3. Critical evaluation and selection of standard state thermodynamic properties for chromium metal and its aqueous ions, hydrolysis species, oxides, and hydroxides

    USGS Publications Warehouse

    Ball, James W.; Nordstrom, D. Kirk

    1998-01-01

    This review critically evaluates the reported thermodynamic data on chromium metal, oxides, hydroxides, free aqueous ions, and hydrolysis species. Several discrepancies and inconsistencies have been uncovered and resolved to improve equilibrium calculations for chemical modeling and related engineering purposes. A revised set of data is derived from evaluation of electrochemical measurements, silver chromate solubility measurements, and auxiliary post-1980 data, reevaluation of earlier data, and reconsideration of the path for the thermodynamic network. The recommended thermodynamic values for Cr(cr), C , C , Cr , Cr2 , Cr2O3(cr), CrO3(cr), FeCr2O4(cr), CrCl2(cr), CrCl3(cr), and KFe3(CrO4)2(OH)6(cr)at 25 °C, 1 bar, and infinite dilution are given.

  4. Phenol oxidation through its adduct formation with chromium complex of 1,4,8,11-tetrakis(2-pyridylmethyl)-1,4,8,11-tetraazacyclotetradecane: A theoretical study

    NASA Astrophysics Data System (ADS)

    Narayanan, Jayanthi; Guadalupe, Hernández J.; Thangarasu, Pandiyan

    2017-04-01

    Structural and electronic properties of [cis-[Cr(tmpcH)X2]n+ (n = 2 or 4; X = OH-, Cl-, Br- and H2O; tmpcH = 1,4,8,11-tetrakis(2-pyridylmethyl)-1,4,8,11-tetraazacyclotetradecane were analyzed by DFT and TD-DFT methods. The local reactivity active site of the ligand was determined by the condensed-to atom Fukui indexes (CAFI) f(r). In the study, the axial bond distance with metal ion undergoes a considerable change from shorter to longer as OH < Cl- < Br- < H2O, agreeing with the molecular orbital analysis where the dz2 energy is lowered for OH- compared to H2O at the axial position. After analyzing the geometrical data collected from literature for the complexes of Cr(II), Mn(II), Fe(II), Co(II), Ni(II), Cu(II), and Zn (II) with tmpcH, it was found that the bond distance decreases with increasing number of d-electrons in the 3d orbital, suggesting that the over-lapping of oribital (π) from Npy with the metal d-orbital is more effective than those from Ncyclam with metal d-orbital. Therefore, the change of different oxidation states for [cis-[Cr(tmpcH)X2]n+ influences significantly the geometrical and electronic parameters. For cis-[Cr(tmpcH)Cl2]2+ the calculated bands are red shifted except for the lower energy band (595 nm) which agrees qualitatively with the experimental one; in addition, the effect of solvent on the electronic transition was analyzed. Furthermore, we collected the electronic data for several chromium complexes from the literature, and compared with our results by plotting the data against number of chromium compounds. Finally, the phenol oxidation properties of the chromium complexes were studied, and phenol forms an adduct with [Cr(tmpcH)Cl]3+ to yield [Cr(tmpcH)Cl-OPh]2+ which could produce the phenol radical, which is enhanced by the presence of -OCH3 group at para- position in the phenolic ring.

  5. OPTIMIZATION AND EVALUATION OF CHROMIUM COMPOSITES.

    DTIC Science & Technology

    COMPOSITE MATERIALS), (*CHROMIUM ALLOYS , POWDER METALLURGY, REINFORCING MATERIALS, TANTALUM ALLOYS , CARBON ALLOYS , OPTIMIZATION, TENSILE PROPERTIES...FRACTOGRAPHY, RUPTURE, DUCTILITY, CORROSION, EROSION, THERMOCOUPLES, PROTECTIVE COVERINGS, FLUIDICS, JET ENGINES, MAGNESIUM COMPOUNDS, OXIDES, VANADIUM ALLOYS , SILICON ALLOYS .

  6. Preparation of Thin Melanin-Type Films by Surface-Controlled Oxidation.

    PubMed

    Salomäki, Mikko; Tupala, Matti; Parviainen, Timo; Leiro, Jarkko; Karonen, Maarit; Lukkari, Jukka

    2016-04-26

    The preparation of thin melanin films suitable for applications is challenging. In this work, we present a new alternative approach to thin melanin-type films using oxidative multilayers prepared by the sequential layer-by-layer deposition of cerium(IV) and inorganic polyphosphate. The interfacial reaction between cerium(IV) in the multilayer and 5,6-dihydroxyindole (DHI) in the adjacent aqueous solution leads to the formation of a thin uniform film. The oxidation of DHI by cerium(IV) proceeds via known melanin intermediates. We have characterized the formed DHI-melanin films using scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), UV-vis spectroscopy, and spectroelectrochemistry. When a five-bilayer oxidative multilayer is used, the film is uniform with a thickness of ca. 10 nm. Its chemical composition, as determined using XPS, is typical for melanin. It is also redox active, and its oxidation occurs in two steps, which can be assigned to semiquinone and quinone formation within the indole structural motif. Oxidative multilayers can also oxidize dopamine, but the reaction stops at the dopamine quinone stage because of the limited amount of the multilayer-based oxidizing agent. However, dopamine oxidation by Ce(IV) was studied also in solution by UV-vis spectroscopy and mass spectrometry in order to verify the reaction mechanism and the final product. In solution, the oxidation of dopamine by cerium shows that the indole ring formation takes place already at low pH and that the mass spectrum of the final product is practically identical with that of commercial melanin. Therefore, layer-by-layer formed oxidative multilayers can be used to deposit functional melanin-type thin films on arbitrary substrates by a surface-controlled reaction.

  7. Molybdenum as a contact material in zinc tin oxide thin film transistors

    SciTech Connect

    Hu, W.; Peterson, R. L.

    2014-05-12

    Amorphous oxide semiconductors are of increasing interest for a variety of thin film electronics applications. Here, the contact properties of different source/drain electrode materials to solution-processed amorphous zinc tin oxide (ZTO) thin-film transistors are studied using the transmission line method. The width-normalized contact resistance between ZTO and sputtered molybdenum is measured to be 8.7 Ω-cm, which is 10, 20, and 600 times smaller than that of gold/titanium, indium tin oxide, and evaporated molybdenum electrodes, respectively. The superior contact formed using sputtered molybdenum is due to a favorable work function lineup, an insulator-free interface, bombardment of ZTO during molybdenum sputtering, and trap-assisted tunneling. The transfer length of the sputtered molybdenum/ZTO contact is 0.34 μm, opening the door to future radio-frequency sub-micron molybdenum/ZTO thin film transistors.

  8. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    ERIC Educational Resources Information Center

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  9. Surface measurement of indium tin oxide thin film by wavelength-tuning Fizeau interferometry.

    PubMed

    Kim, Yangjin; Hibino, Kenichi; Sugita, Naohiko; Mitsuishi, Mamoru

    2015-08-10

    Indium-tin oxide (ITO) thin films have been widely used in displays such as liquid crystal displays and touch panels because of their favorable electrical conductivity and optical transparency. The surface shape and thickness of ITO thin films must be precisely measured to improve their reliability and performance. Conventional measurement techniques take single point measurements and require expensive systems. In this paper, we measure the surface shape of an ITO thin film on top of a transparent plate using wavelength-tuning Fizeau interferometry. The surface shape was determined by compensating for the phase error introduced by optical interference from the thin film, which was calculated using the phase and amplitude distributions measured by wavelength-tuning. The proposed measurement method achieved noncontact, large-aperture, and precise measurements of transparent thin films. The surface shape of the sample was experimentally measured to an accuracy of 5.13 nm.

  10. Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor

    SciTech Connect

    Kim, Junghwan Miyokawa, Norihiko; Ide, Keisuke; Toda, Yoshitake; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio

    2016-01-15

    We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature. Eu-doped amorphous In-Ga-Zn-O thin films fabricated at room temperature emitted intense red emission at 614 nm. It is achieved by precise control of oxygen pressure so as to suppress oxygen-deficiency/excess-related defects and free carriers. An electronic structure model is proposed, suggesting that non-radiative process is enhanced mainly by defects near the excited states. AOS would be a promising host for a thin film phosphor applicable to flexible displays as well as to light-emitting transistors.

  11. Plasmonic nanodot array optimization on organic thin film solar cells using anodic aluminum oxide templates

    NASA Astrophysics Data System (ADS)

    Bae, Kyuyoung; Kim, Kyoungsik

    2013-09-01

    The fabrication method of plasmonic nanodots on ITO or nc-ZnO substrate has been developed to improve the efficiency of organic thin film solar cells. Nanoscale metallic nanodots arrays are fabricated by anodic aluminum oxide (AAO) template mask which can have different structural parameters by varying anodization conditions. In this paper, the structural parameters of metallic nanodots, which can be controlled by the diverse structures of AAO template mask, are investigated to enhance the optical properties of organic thin film solar cells. It is found that optical properties of the organic thin film solar cells are improved by finding optimization values of the structural parameters of the metallic nanodot array.

  12. Conductor Formation Through Phase Transformation in Ti-Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Liu, Y. S.; Lin, Y. H.; Wei, Y. S.; Liu, C. Y.

    2012-01-01

    The resistance and transmittance of Ti-oxide thin films sputtered on quartz substrates were studied. The electrical and optical properties can be changed by varying the percentage of O2 introduced during the sputtering. The lowest resistivity for the sputtered Ti-oxide thin film was 2.30 × 10-2 Ω cm for 12.5% O2, which was obtained after annealing at 400°C in ambient oxygen. The results of x-ray photoelectron spectroscopy (XPS) curve-fitting indicate that the Ti-oxide thin film contained both Ti2O3 and TiO2 phases during deposition. The Ti2O3 phase was transformed into the stable TiO2 phase during annealing. The Ti2O3-TiO2 phase transformation initiated the substitution reaction. The substitution of Ti4+ ions in the TiO2 phase for the Ti3+ ions in the Ti2O3 phase created the free electrons. This Ti2O3-TiO2 phase transformation demonstrates the potential mechanism for conduction in the annealed Ti-oxide thin films. The transmittance of the annealed Ti-oxide thin films can be as high as approximately 90% at the 400 nm wavelength with the introduction of 16.5% O2. This result indicates that the annealed Ti-oxide thin films are excellent candidates for use as transparent conducting layers for ultraviolet (UV) or near-UV light-emitting diode (LED) devices.

  13. Electrodeposition and electrochemical reduction of epitaxial metal oxide thin films and superlattices

    NASA Astrophysics Data System (ADS)

    He, Zhen

    The focus of this dissertation is the electrodeposition and electrochemical reduction of epitaxial metal oxide thin films and superlattices. The electrochemical reduction of metal oxides to metals has been studied for decades as an alternative to pyrometallurgical processes for the metallurgy industry. However, the previous work was conducted on bulk polycrystalline metal oxides. Paper I in this dissertation shows that epitaxial face-centered cubic magnetite (Fe3O4 ) thin films can be electrochemically reduced to epitaxial body-centered cubic iron (Fe) thin films in aqueous solution on single-crystalline Au substrates at room temperature. This technique opens new possibilities to produce special epitaxial metal/metal oxide heterojunctions and a wide range of epitaxial metallic alloy films from the corresponding mixed metal oxides. Electrodeposition, like biomineralization, is a soft solution processing method which can produce functional materials with special properties onto conducting or semiconducting solid surfaces. Paper II in this dissertation presents the electrodeposition of cobalt-substituted magnetite (CoxFe3-xO4, 0 of cobalt-substituted magnetite (CoxFe3-xO4, 0thin films and superlattices on Au single-crystalline substrates, which can be potentially used in spintronics and memory devices. Paper III in this dissertation reports the electrodeposition of crystalline cobalt oxide (Co3O4) thin films on stainless steel and Au single-crystalline substrates. The crystalline Co3O4 thin films exhibit high catalytic activity towards the oxygen evolution reaction in an alkaline solution. A possible application of the electrodeposited Co 3O4 is the fabrication of highly active and low-cost photoanodes for photoelectrochemical water-splitting cells.

  14. Effect of oxygen deficiency on electronic properties and local structure of amorphous tantalum oxide thin films

    SciTech Connect

    Denny, Yus Rama; Firmansyah, Teguh; Oh, Suhk Kun; Kang, Hee Jae; Yang, Dong-Seok; Heo, Sung; Chung, JaeGwan; Lee, Jae Cheol

    2016-10-15

    Highlights: • The effect of oxygen flow rate on electronic properties and local structure of tantalum oxide thin films was studied. • The oxygen deficiency induced the nonstoichiometric state a-TaOx. • A small peak at 1.97 eV above the valence band side appeared on nonstoichiometric Ta{sub 2}O{sub 5} thin films. • The oxygen flow rate can change the local electronic structure of tantalum oxide thin films. - Abstract: The dependence of electronic properties and local structure of tantalum oxide thin film on oxygen deficiency have been investigated by means of X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results showed that the oxygen flow rate change results in the appearance of features in the Ta 4f at the binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV whose peaks are attributed to Ta{sup 1+}, Ta{sup 2+}, Ta{sup 3+}/Ta{sup 4+}, and Ta{sup 5+}, respectively. The presence of nonstoichiometric state from tantalum oxide (TaOx) thin films could be generated by the oxygen vacancies. In addition, XAS spectra manifested both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the decrease of oxygen deficiency.

  15. Strong oxidation resistance of atomically thin boron nitride nanosheets.

    PubMed

    Li, Lu Hua; Cervenka, Jiri; Watanabe, Kenji; Taniguchi, Takashi; Chen, Ying

    2014-02-25

    Investigation of oxidation resistance of two-dimensional (2D) materials is critical for many of their applications because 2D materials could have higher oxidation kinetics than their bulk counterparts due to predominant surface atoms and structural distortions. In this study, the oxidation behavior of high-quality boron nitride (BN) nanosheets of 1-4 layers thick has been examined by heating in air. Atomic force microscopy and Raman spectroscopy analyses reveal that monolayer BN nanosheets can sustain up to 850 °C, and the starting temperature of oxygen doping/oxidation of BN nanosheets only slightly increases with the increase of nanosheet layer and depends on heating conditions. Elongated etch lines are found on the oxidized monolayer BN nanosheets, suggesting that the BN nanosheets are first cut along the chemisorbed oxygen chains and then the oxidative etching grows perpendicularly to these cut lines. The stronger oxidation resistance of BN nanosheets makes them more preferable for high-temperature applications than graphene.

  16. Erbium oxide thin films on Si(100) obtained by laser ablation and electron beam evaporation

    NASA Astrophysics Data System (ADS)

    Queralt, X.; Ferrater, C.; Sánchez, F.; Aguiar, R.; Palau, J.; Varela, M.

    1995-02-01

    Erbium oxide thin films have been obtained by laser ablation and electron beam evaporation techniques on Si(100) substrates. The samples were grown under different conditions of oxygen atmosphere and substrate temperature without any oxidation process after deposition. The crystal structure has been studied by X-ray diffraction. Films obtained by laser ablation are highly textured in the [ hhh] direction, although this depends on the conditions of oxygen pressure and substrate temperature. In order to study the depth composition profile of the thin films and the interdiffusion of erbium metal and oxygen towards the silicon substrates, X-ray photoelectron spectroscopy analyses have been carried out.

  17. Identification of the oxidation state of americium by thin-layer chromatography using domestic plates

    SciTech Connect

    Molochnikova, N.P.; Myasoedov, B.F.

    1994-10-01

    Methods of precipitation, solvent extraction, ion exchange, and extraction chromatography were suggested to identify trace amounts of americium in different oxidation states. Thin-layer chromatography (TLC) has not been used previously for these purposes. At the same time, this method is widely used in the separation of small quantities of elements in different valence states. Previously, the chromatographic mobility of actinide ions on thin layers of silica gel and cellulose on Silufol plates (CSFR) and plates from Merck (Germany) was investigated. The behavior of americium in different oxidation states on domestic TLC plates in nitric acid solutions was determined to be of interest.

  18. Investigation of optical properties of nickel oxide thin films deposited on different substrates

    NASA Astrophysics Data System (ADS)

    Nama Manjunatha, Krishna; Paul, Shashi

    2015-10-01

    Nickel oxide has been investigated for several potential applications, namely, ultraviolet detectors, electro chromic devices, displays, diodes for light emitting, transparent conductive electrode, and optoelectronic devices. These applications require an in depth analysis of nickel oxide prior to its exploration in aforementioned devices. Optical properties of materials were investigated by depositing thin film of nickel oxide on different substrates in order to understand if the choice of substrate can have effect on deducing various optical parameters and can lead to wrong conclusions. In view of this, we have investigated optical properties of nickel oxide deposited on different substrates (glass, transparent plastic, sapphire, potassium bromide, and calcium fluoride).

  19. Effects of working pressure on physical properties of tungsten-oxide thin films sputtered from oxide target

    SciTech Connect

    Riech, I.; Acosta, M.; Pena, J. L.; Bartolo-Perez, P.

    2010-03-15

    Tungsten-oxide films were deposited on glass substrates from a metal-oxide target by nonreactive radio-frequency sputtering. The authors have studied the effect that changing Ar gas pressure has on the electrical, optical, and chemical composition in the thin films. Resistivity of WO{sub 3} changed ten orders of magnitude with working gas pressure values from 20 to 80 mTorr. Thin films deposited at 20 mTorr of Ar sputtering pressure showed lower resistivity and optical transmittance. X-ray photoelectron spectroscopy (XPS) measurements revealed similar chemical composition for all samples irrespective of Ar pressure used. However, XPS analyses of the evolution of W 4f and O 1s peaks indicated a mixture of oxides dependent on the Ar pressure used during deposition.

  20. Investigation of physicochemical and tribological properties of transparent oxide semiconducting thin films based on Ti-V oxides

    NASA Astrophysics Data System (ADS)

    Mazur, M.; Sieradzka, K.; Kaczmarek, D.; Domaradzki, J.; Wojcieszak, D.; Domanowski, P.

    2013-08-01

    In this paper investigations of structural and optical properties of nanocrystalline Ti-V oxide thin films are described. The films were deposited onto Corning 7059 glass using a modified reactive magnetron sputtering method. Structural investigations of prepared Ti-V oxides with vanadium addition of 19 at. % revealed amorphous structure, while incorporation of 21 and 23 at. % of vanadium resulted in V2O5 formation with crystallites sizes of 12.7 and 32.4 nm, respectively. All prepared thin films belong to transparent oxide semiconductors due to their high transmission level of ca. 60-75 % in the visible light range, and resistivity in the range of 3.3·102-1.4·105 Ωcm. Additionally, wettability and hardness tests were performed in order to evaluate the usefulness of the films for functional coatings.

  1. Fabrication and characterization of oxide-based thin film transistors, and process development for oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Lim, Wantae

    2009-12-01

    This dissertation is focused on the development of thin film transistors (TFTs) using oxide materials composed of post-transitional cations with (n-1)d 10ns0 (n≥4). The goal is to achieve high performance oxide-based TFTs fabricated at low processing temperature on either glass or flexible substrates for next generation display applications. In addition, etching mechanism and Ohmic contact formation for oxide heterostructure (ZnO/CuCrO 2) system is demonstrated. The deposition and characterization of oxide semiconductors (In 2O3-ZnO, and InGaZnO4) using a RF-magnetron sputtering system are studied. The main influence on the resistivity of the films is found to be the oxygen partial pressure in the sputtering ambient. The films remained amorphous and transparent (> 70%) at all process conditions. These films showed good transmittance at suitable conductivity for transistor fabrication. The electrical characteristics of both top- and bottom-gate type Indium Zinc Oxide (InZnO) and Indium Gallium Zinc Oxide (InGaZnO4)-based TFTs are reported. The InZnO films were favorable for depletion-mode TFTs due to their tendency to form oxygen vacancies, while enhancement-mode devices were realized with InGaZnO4 films. The InGaZnO4-based TFTs fabricated on either glass or plastic substrates at low temperature (<100°C) exhibit good electrical properties: the saturation mobility of 5--12 cm2.V-1.s-1 and threshold voltage of 0.5--2.5V. The devices are also examined as a function of aging time in order to verify long-term stability in air. The effect of gate dielectric materials on electrical properties of InGaZnO 4-based TFTs was investigated. The use of SiNx film as a gate dielectric reduces the trap density and the roughness at the channel/gate dielectric interface compared to SiO2 gate dielectric, resulting in an improvement of device parameters by reducing scattering of trapped charges at the interface. The quality of interface is shown to have large effect on TFT performance

  2. Fluorine compounds for doping conductive oxide thin films

    DOEpatents

    Gessert, Tim; Li, Xiaonan; Barnes, Teresa M; Torres, Jr., Robert; Wyse, Carrie L

    2013-04-23

    Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

  3. MOCVD of zirconium oxide thin films: Synthesis and characterization

    NASA Astrophysics Data System (ADS)

    Torres-Huerta, A. M.; Domínguez-Crespo, M. A.; Ramírez-Meneses, E.; Vargas-García, J. R.

    2009-02-01

    The synthesis of thin films of zirconia often produces tetragonal or cubic phases, which are stable at high temperatures, but that can be transformed into the monoclinic form by cooling. In the present study, we report the deposition of thin zirconium dioxide films by metalorganic chemical vapor deposition using zirconium (IV)-acetylacetonate as precursor. Colorless, porous, homogeneous and well adherent ZrO 2 thin films in the cubic phase were obtained within the temperature range going from 873 to 973 K. The deposits presented a preferential orientation towards the (1 1 1) and (2 2 0) planes as the substrate temperature was increased, and a crystal size ranging between 20 and 25 nm. The kinetics is believed to result from film growth involving the deposition and aggregation of nanosized primary particles produced during the CVD process. A mismatch between the experimental results obtained here and the thermodynamic prediction was found, which can be associated with the intrinsic nature of the nanostructured materials, which present a high density of interfaces.

  4. The impact of multilayer periodicity on texture, morphology, chemical stability and machining performance of titanium aluminum nitride/chromium nitride thin films

    NASA Astrophysics Data System (ADS)

    Delisle, Dale Andrew

    Multilayer thin films of TiAlN/CrN were deposited at varying bilayer periods (λ = 2, 4, 8 and 16 nm), along with a co-deposited (TiAlCr)N film and constituent TiAlN and CrN films, on both [111] silicon substrates and WC-4wt% Co inserts with an ISO SPGN 120308 geometry. The effects of periodicity on grain structure, texture, surface morphology, and roughness were examined, with characterization performed using electron microscopy, atomic force microscopy and x-ray diffraction analysis. An in-air constant temperature oxidation study was also performed at 650 thru 1050°C with stacked XRD line profiles and SEM used to identify the onset and extent of oxidation, respectively. Finally, dry high speed flank wear tool life experiments were completed against A2 tool steel, with the impact of the multilayer period reported in ISO standard wear vs. cutting time format. Machining results were connected back to the previously identified changes in structure. All films exhibited a rocksalt B1-type structure with a columnar morphology and lateral coarsening during film growth; which was more pronounced in the multilayer films with smaller bilayer periods. The surface morphology was found to be dependent on period; exhibiting sharp pyramidal surface features at λ = 2 nm and an increase in secondary faceting with increasing periodicity. Nearly rounded column tops result at λ = 16 nm. Surface roughness measurements showed an increasing roughness with decreasing bilayer period and pole figures revealed a small [111] texture component perpendicular to the sample surface in the 2 and 4 nm period films, with the distribution of [111] poles becoming nearly random for the films with larger periodicities (8 and 16 nm). Preferential [200] poles begin approximately 15° tilted away from the substrate normal while further increase in period results in a decrease in the off axis angle. The effect of multilayer period on the surface morphology is explained using an energetic argument

  5. Study on the Preparation and Properties of Colored Iron Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Zhao, Xianhui; Li, Changhong; Liu, Qiuping; Duan, Yandong; He, Junjing; Liu, Su; Wang, Hai; Liang, Song

    2013-03-01

    Colored iron oxide thin films were prepared using Sol-gel technique. The raw materials were tetraethyl orthosilicate (TEOS), etoh ehanol (EtOH), iron nitrate, and de-ionized water. Various properties were measured and analysed, including the colour of thin films, surface topography, UV-Visible spectra, corrosion resistance and hydrophobicity. To understand how these properties influenced the structural and optical properties of Fe2O3 thin films, Scanning Electron Microscope (SEM), UV Spectrophotometer and other facilities were employed. Many parameters influence the performance of thin films, such as film layers, added H2O content, and the amount of polydimethylsiloxane (PDMS). When the volume ratio of TEOS, EtOH and H2O was 15: 13: 1, the quality of Fe(NO3)3·9H2O was 6g, and pH value was 3, reddish and uniform Fe2O3 thin films with excellent properties were produced. Obtained thin films possessed corrosion resistance in hydrochloric acid with pH=l and the absorption edge wavelength was ~350.2nm. Different H2O contents could result in different morphologies of Fe2O3 nanoparticles. When 1.5 ml PDMS was added into the Sol, thin films possessed hydrophobiliry without dropping. Coating with different layers, thin films appeared different morphologies. Meanwhile, with the increment of film layers, the absorbance increased gradually.

  6. Theoretical Investigation of Supported Utra-Thin Cobalt/Nickel/Iron/Manganese Oxides

    NASA Astrophysics Data System (ADS)

    Bajdich, Michal; García Melchor, Max; Vojvodic, Alexandra

    In the last decade, a number of experiments have shown that ultra-thin layers of transition metal oxides (TMOs) can be stabilized when interfaced with precious metal supports such as Au(111) and Pt(111) or Ir(100). Moreover, gold supported Co/Ni/Mn-based catalysts have been experimentally proven to exhibit higher oxygen evolution reaction (OER) activities than other metal supported oxide catalysts. However, the synergistic effect of contact with gold support is yet to be fully understood. In this talk, I will report on our recent investigation of thermodynamic stability and and high water reactivity of ultra-thin cobalt oxide nanoislands supported on Au(111). Furthermore, the stability trends, scaling of the metal-support interaction and charge transfer of several Mn/Fe/Co/Ni supported oxides on all FCC(111) metals will be analyzed. The type and role of different edge sites for the OER activity of these nanoislands will be discussed.

  7. Self-activated ultrahigh chemosensitivity of oxide thin film nanostructures for transparent sensors

    PubMed Central

    Moon, Hi Gyu; Shim, Young-Soek; Kim, Do Hong; Jeong, Hu Young; Jeong, Myoungho; Jung, Joo Young; Han, Seung Min; Kim, Jong Kyu; Kim, Jin-Sang; Park, Hyung-Ho; Lee, Jong-Heun; Tuller, Harry L.; Yoon, Seok-Jin; Jang, Ho Won

    2012-01-01

    One of the top design priorities for semiconductor chemical sensors is developing simple, low-cost, sensitive and reliable sensors to be built in handheld devices. However, the need to implement heating elements in sensor devices, and the resulting high power consumption, remains a major obstacle for the realization of miniaturized and integrated chemoresistive thin film sensors based on metal oxides. Here we demonstrate structurally simple but extremely efficient all oxide chemoresistive sensors with ~90% transmittance at visible wavelengths. Highly effective self-activation in anisotropically self-assembled nanocolumnar tungsten oxide thin films on glass substrate with indium-tin oxide electrodes enables ultrahigh response to nitrogen dioxide and volatile organic compounds with detection limits down to parts per trillion levels and power consumption less than 0.2 microwatts. Beyond the sensing performance, high transparency at visible wavelengths creates opportunities for their use in transparent electronic circuitry and optoelectronic devices with avenues for further functional convergence. PMID:22905319

  8. High resolution Fowler-Nordheim field emission maps of thin silicon oxide layers

    NASA Astrophysics Data System (ADS)

    Ruskell, Todd G.; Workman, Richard K.; Chen, Dong; Sarid, Dror; Dahl, Sarah; Gilbert, Stephen

    1996-01-01

    An improved method for characterizing thin oxide films using Fowler-Nordheim field emission is reported. The method uses a conducting-tip atomic force microscope with dual feedback systems, one for the topography and a second for the field emission bias voltage. Images of the voltage required to maintain a 10 pA emission current through a 3 nm oxide film thermally grown on p-type Si(100) demonstrate a spatial resolution of 8 nm.

  9. Fabrication of Thin Electrolytes for Second-Generation Solid Oxide Fuel Cells

    DTIC Science & Technology

    1999-05-05

    methods for oxides, especially for stabilized zirconia and compares them with regard to SOFC applications. These methods will be classified into chemical...Keywords: SOFC ; Thin films; Zirconia; PVD; CVD; Liquid precursor methods 1. Introduction components [1-6]. One problem associated with lowering the...electrolyte material for Solid Oxide Fuel lowering the electrolyte resistance either by decreas- Cells ( SOFCs ) because of its unique combination of ing the

  10. Synthesis of Cobalt Oxides Thin Films Fractal Structures by Laser Chemical Vapor Deposition

    PubMed Central

    Haniam, P.; Kunsombat, C.; Chiangga, S.; Songsasen, A.

    2014-01-01

    Thin films of cobalt oxides (CoO and Co3O4) fractal structures have been synthesized by using laser chemical vapor deposition at room temperature and atmospheric pressure. Various factors which affect the density and crystallization of cobalt oxides fractal shapes have been examined. We show that the fractal structures can be described by diffusion-limited aggregation model and discuss a new possibility to control the fractal structures. PMID:24672354

  11. Induction of superconductivity of a La2CuO4 thin film chemically oxidized by NaClO

    NASA Astrophysics Data System (ADS)

    Wang, C. C.; Cui, M. L.; Zheng, X.; Zhu, J.

    High-quality, c-axis-oriented La2CuO4 thin films have been fabricated by the pulsed laser ablation technique. Superconductivity has been successfully induced in the films after chemical oxidation using sodium hypochlorite solution as oxidizing agent. The structural properties, surface morphology, and electrical resistivity before and after oxidation are compared. In addition, the oxidation mechanism is discussed.

  12. Properties of anodic oxides grown on a hafnium–tantalum–titanium thin film library

    PubMed Central

    Mardare, Andrei Ionut; Ludwig, Alfred; Savan, Alan; Hassel, Achim Walter

    2014-01-01

    A ternary thin film combinatorial materials library of the valve metal system Hf–Ta–Ti obtained by co-sputtering was studied. The microstructural and crystallographic analysis of the obtained compositions revealed a crystalline and textured surface, with the exception of compositions with Ta concentration above 48 at.% which are amorphous and show a flat surface. Electrochemical anodization of the composition spread thin films was used for analysing the growth of the mixed surface oxides. Oxide formation factors, obtained from the potentiodynamic anodization curves, as well as the dielectric constants and electrical resistances, obtained from electrochemical impedance spectroscopy, were mapped along two dimensions of the library using a scanning droplet cell microscope. The semiconducting properties of the anodic oxides were mapped using Mott–Schottky analysis. The degree of oxide mixing was analysed qualitatively using x-ray photoelectron spectroscopy depth profiling. A quantitative analysis of the surface oxides was performed and correlated to the as-deposited metal thin film compositions. In the concurrent transport of the three metal cations during oxide growth a clear speed order of Ti > Hf > Ta was proven. PMID:27877648

  13. Characterization and properties of multicomponent oxide thin films with gasochromic effect

    NASA Astrophysics Data System (ADS)

    Domaradzki, Jaroslaw; Baniewicz, Kosma; Mazur, Michał; Wojcieszak, Damian; Kaczmarek, Danuta

    2013-07-01

    In this work structural, optical and surface properties of gasochromic thin films based on mixtures of selected transition metal oxides have been outlined. Two sets of thin films were prepared by reactive magnetron sputtering from four-component metallic mosaic targets containing Ti, V ,Ta as a base and W or Nb as a fourth material. Neither Pd nor Pt metals were used as a catalyst. X-ray diffraction investigations revealed, that all prepared thin films were amorphous while application of x-ray photoelectron spectroscopy studies show presence of TiO2, V2O5, Ta2O5, and WO3 or Nb2O5 oxides at the surface depending on the thin films composition. Gasochromic properties were investigated through observations of the change in optical transmission response of the films exposed to reducing or oxidizing gas. Dynamic optical responses of samples were collected at room temperature. Depending on composition of the sample being investigated the change in optical transmission at room temperature ranged up to about 28 %. Based on optical transmission refraction and extinction indexes were calculated using reverse synthesis method. The obtained results are very promising for utilization of prepared thin films in optical gas sensing devices.

  14. Magnetoelectric hexaferrite thin film growth on oxide conductive layer for applications at low voltages

    NASA Astrophysics Data System (ADS)

    Zare, Saba; Izadkhah, Hessam; Vittoria, Carmine

    2016-08-01

    Magnetoelectric (ME) M-type hexaferrite thin films were deposited on conductive oxide layer of Indium-Tin Oxide (ITO) in order to lower applied voltages to observe ME effects at room temperature. The thin film of ME hexaferrites, SrCo2Ti2Fe8O19/ITO buffer layer, were deposited on sapphire substrate using Pulsed Laser Deposition (PLD) technique. The film exhibited ME effects as confirmed by vibrating sample magnetometer (VSM) in voltages as low as 0.5 V. Without the oxide conductive layer the required voltages to observe ME effects were typically 500 V and higher. The thin films were characterized by X-ray diffractometer, scanning electron microscope, energy-dispersive spectroscopy, vibrating sample magnetometer, and ferromagnetic resonance. We measured saturation magnetization of 1064 G, and coercive field of 20 Oe for these thin films. The change rate in remanence magnetization was measured with the application of DC voltage at room temperature and it gave rise to changes in remanence in the order of 15% with the application of only 0.5 V (DC voltage). We deduced a ME coupling, α, of 5×10-10 s m-1 in SrCo2Ti2Fe8O19 thin films.

  15. Enhanced Luminescence in Epitaxial Oxide Thin-Film Phosphors

    SciTech Connect

    Lee, Y.E.; Norton, D.P.; Budai, J.D.; Park, C.; Kim, M.; Pennycook, S.J.; Rack, P.D.; Potter, M.D.

    1999-11-08

    Undoped and Mn-doped ZnGa{sub 2}O{sub 4} thin-film phosphors were grown using pulsed laser ablation on (100) MgO single crystal and glass substrates. X-ray results showed the films on (100) MgO are well aligned both out-of plane and in-plane. Epitaxial films show superior photoluminescent intensity as compared to randomly oriented polycrystalline films, indicating that intragranular crystallinity strongIy influences luminescent properties. Li-doped ZnGa{sub 2}O{sub 4} exhibited significantly enhanced photoluminescence intensity.

  16. Characterization of Monolayer Formation on Aluminum-Doped Zinc Oxide Thin Films

    SciTech Connect

    Rhodes,C.; Lappi, S.; Fischer, D.; Sambasivan, S.; Genzer, J.; Franzen, S.

    2008-01-01

    The optical and electronic properties of aluminum-doped zinc oxide (AZO) thin films on a glass substrate are investigated experimentally and theoretically. Optical studies with coupling in the Kretschmann configuration reveal an angle-dependent plasma frequency in the mid-IR for p-polarized radiation, suggestive of the detection of a Drude plasma frequency. These studies are complemented by oxygen depletion density functional theory studies for the calculation of the charge carrier concentration and plasma frequency for bulk AZO. In addition, we report on the optical and physical properties of thin film adlayers of n-hexadecanethiol (HDT) and n-octadecanethiol (ODT) self-assembled monolayers (SAMs) on AZO surfaces using reflectance FTIR spectroscopy, X-ray photoelectron spectroscopy (XPS), contact angle, and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. Our characterization of the SAM deposition onto the AZO thin film reveals a range of possible applications for this conducting metal oxide.

  17. PEALD YSZ-based bilayer electrolyte for thin film-solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Yu, Wonjong; Cho, Gu Young; Hong, Soonwook; Lee, Yeageun; Kim, Young Beom; An, Jihwan; Cha, Suk Won

    2016-10-01

    Yttria-stabilized zirconia (YSZ) thin film electrolyte deposited by plasma enhanced atomic layer deposition (PEALD) was investigated. PEALD YSZ-based bi-layered thin film electrolyte was employed for thin film solid oxide fuel cells on nanoporous anodic aluminum oxide substrates, whose electrochemical performance was compared to the cell with sputtered YSZ-based electrolyte. The cell with PEALD YSZ electrolyte showed higher open circuit voltage (OCV) of 1.0 V and peak power density of 182 mW cm-2 at 450 °C compared to the one with sputtered YSZ electrolyte(0.88 V(OCV), 70 mW cm-2(peak power density)). High OCV and high power density of the cell with PEALD YSZ-based electrolyte is due to the reduction in ohmic and activation losses as well as the gas and electrical current tightness.

  18. Extremely thin bilayer electrolyte for solid oxide fuel cells (SOFCs) fabricated by chemical solution deposition (CSD).

    PubMed

    Oh, Eun-Ok; Whang, Chin-Myung; Lee, Yu-Ri; Park, Sun-Young; Prasad, Dasari Hari; Yoon, Kyung Joong; Son, Ji-Won; Lee, Jong-Ho; Lee, Hae-Weon

    2012-07-03

    An extremely thin bilayer electrolyte consisting of yttria-stabilized zirconia (YSZ) and gadolinia-doped ceria (GDC) is successfully fabricated on a sintered NiO-YSZ substrate. Major processing flaws are effectively eliminated by applying local constraints to YSZ nanoparticles, and excellent open circuit voltage and cell performance are demonstrated in a solid oxide fuel cell (SOFC) at intermediate operating temperatures.

  19. Microstructure of oxide dispersion strengthened Eurofer and iron-chromium alloys investigated by means of small-angle neutron scattering and transmission electron microscopy

    NASA Astrophysics Data System (ADS)

    Heintze, C.; Bergner, F.; Ulbricht, A.; Hernández-Mayoral, M.; Keiderling, U.; Lindau, R.; Weissgärber, T.

    2011-09-01

    Oxide dispersion strengthening of ferritic/martensitic chromium steels is a promising route for the extension of the range of operation temperatures for nuclear applications. The investigation of dedicated model alloys is an important means in order to separate individual effects contributing to the mechanical behaviour under irradiation and to improve mechanistic understanding. A powder metallurgy route based on spark plasma sintering was applied to fabricate oxide dispersion strengthened (ODS) Fe9Cr model materials. These materials along with Eurofer97 and ODS-Eurofer were investigated by means of small-angle neutron scattering (SANS) and TEM. For Fe9Cr-0.6 wt.%Y 2O 3, TEM results indicate a peak radius of the size distribution of Y 2O 3 particles of 4.2 nm with radii ranging up to 15 nm, and a volume fraction of 0.7%, whereas SANS indicates a peak radius of 3.8 nm and a volume fraction of 0.6%. It was found that the non-ODS Fe9Cr and Eurofer97 are suitable reference materials for ODS-Fe9Cr and ODS-Eurofer, respectively, and that the ODS-Fe9Cr variants are suitable model materials for the separated investigation of irradiation-Y 2O 3 particle interaction effects.

  20. Memory switches based on metal oxide thin films

    NASA Technical Reports Server (NTRS)

    Ramesham, Rajeshuni (Inventor); Thakoor, Anilkumar P. (Inventor); Lambe, John J. (Inventor)

    1990-01-01

    MnO.sub.2-x thin films (12) exhibit irreversible memory switching (28) with an OFF/ON resistance ratio of at least about 10.sup.3 and the tailorability of ON state (20) resistance. Such films are potentially extremely useful as a connection element in a variety of microelectronic circuits and arrays (24). Such films provide a pre-tailored, finite, non-volatile resistive element at a desired place in an electric circuit, which can be electrically turned OFF (22) or disconnected as desired, by application of an electrical pulse. Microswitch structures (10) constitute the thin film element, contacted by a pair of separate electrodes (16a, 16b) and have a finite, pre-selected ON resistance which is ideally suited, for example, as a programmable binary synaptic connection for electronic implementation of neural network architectures. The MnO.sub.2-x microswitch is non-volatile, patternable, insensitive to ultraviolet light, and adherent to a variety of insulating substrates (14), such as glass and silicon dioxide-coated silicon substrates.

  1. Microstructure and surface properties of chromium-doped diamond-like carbon thin films fabricated by high power pulsed magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Wu, Zhongzhen; Tian, Xiubo; Gui, Gang; Gong, Chunzhi; Yang, Shiqin; Chu, Paul K.

    2013-07-01

    High power pulsed magnetron sputtering (HPPMS) has attracted much interest due to the large plasma density and high ionization rate of sputtered materials. It is expected to produce a highly ionized C flux from a graphite target but unfortunately, the ionization rate of carbon is still very small and the discharge on a solid carbon target is unstable as well. In this work, a stable discharged chromium target is used in the preparation of chromium-doped diamond-like carbon (Cr-DLC) films in HPPMS in reactive C2H2 gas, but the unstable graphite. The chromium concentration in the Cr-DLC films is limited by surface poisoning due to reactive gas. Less than 2% of Cr is incorporated into the DLC films at C2H2 flow rate of 5 sccm or higher. However, as a result of the high ionization rate of the reactive gas in HPPMS, intense ion bombardment of the substrate is realized. The films show a smooth surface and a dense structure with a large sp3 concentration. As the C2H2 flow increase, the sp3 fraction increase and the sp3 to sp2 ratio increase to 0.75 at a C2H2 flow rate of 10 sccm. Compared to the substrate, the Cr-DLC films have lower friction and exhibit excellent corrosion resistance.

  2. Pseudo capacitive performance of copper oxide thin films grown by RF sputtering

    SciTech Connect

    Reddy, B. Purusottam; Ganesh, K. Sivajee; Hussain, O. M.

    2015-06-24

    Thin films of Copper Oxide were prepared by radio frequency magnetron sputtering on steel substrates maintained at 250°C under different RF powers ranging from 150W to 250W by keeping the sputtering pressure at 5.7×10{sup −3} mbar and O{sub 2}:Ar ratio of 1:7. The influence of RF power on the pseudo capacitive performance of thin films was studied. The X-ray diffraction studies and Raman studies indicates that all the thin films exhibits CuO phase. The electrochemical studies was done by using three electrode configuration with platinum as reference electrode. From the cyclic voltammetry studies a high rate pseudocapacitance of 227 mFcm{sup −2} at 0.5 mVs{sup −1} and 77% of capacity retention after 1000 cycles was obtained for the CuO thin films prepared at an RF power of 220W.

  3. Nanostructured tungsten trioxide thin films synthesized for photoelectrocatalytic water oxidation: a review.

    PubMed

    Zhu, Tao; Chong, Meng Nan; Chan, Eng Seng

    2014-11-01

    The recent developments of nanostructured WO3 thin films synthesized through the electrochemical route of electrochemical anodization and cathodic electrodeposition for the application in photoelectrochemical (PEC) water splitting are reviewed. The key fundamental reaction mechanisms of electrochemical anodization and cathodic electrodeposition methods for synthesizing nanostructured WO3 thin films are explained. In addition, the effects of metal oxide precursors, electrode substrates, applied potentials and current densities, and annealing temperatures on size, composition, and thickness of the electrochemically synthesized nanostructured WO3 thin films are elucidated in detail. Finally, a summary is given for the general evaluation practices used to calculate the energy conversion efficiency of nanostructured WO3 thin films and a recommendation is provided to standardize the presentation of research results in the field to allow for easy comparison of reported PEC efficiencies in the near future.

  4. Zinc Oxide Thin Films Fabricated with Direct Current Magnetron Sputtering Deposition Technique

    SciTech Connect

    Hoon, Jian-Wei; Chan, Kah-Yoong; Krishnasamy, Jegenathan; Tou, Teck-Yong

    2011-03-30

    Zinc oxide (ZnO) is a very promising material for emerging large area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 100 nm to 1020 nm were deposited on silicon (Si) substrate. The deposition pressure was varied from 12 mTorr to 25 mTorr. The influences of the film thickness and the deposition pressure on structural properties of the ZnO films were investigated using Mahr surface profilometer and atomic force microscopy (AFM). The experimental results reveal that the film thickness and the deposition pressure play significant role in the structural formation of the deposited ZnO thin films. ZnO films deposited on Si substrates are promising for variety of thin-film sensor applications.

  5. Research Update: New possibilities for the nanoscale engineering of complex oxide thin films

    NASA Astrophysics Data System (ADS)

    McMitchell, S. R. C.

    2015-06-01

    Complex oxides are becoming engrained into modern technology. Understanding the growth and properties of these materials is extremely important for development of novel devices and optimization of existing technologies. Control of the growth of thin film oxides is essential to facilitate the fine-tuning of properties needed for device optimization. In this article, some recent advances in nanoscale engineering of functional oxides are summarized. Control of film structure through manipulation of growth kinetics and substrate considerations is discussed. The construction of composites and artificial materials is also considered. Furthermore, a future outlook is investigated including a route to industrial scale application.

  6. Thermochromic vanadium oxide thin films: Electronic and optical properties

    NASA Astrophysics Data System (ADS)

    Niklasson, G. A.; Li, S.-Y.; Granqvist, C. G.

    2014-11-01

    Vanadium dioxide, VO2, is a widely studied thermochromic material with potential applications in energy efficient window technology. It undergoes a first-order metal-to- insulator transition, accompanied by a crystal structure transformation from monoclinic to tetragonal rutile, at a critical temperature of 68 °C. Below this temperature, VO2 is semiconducting and infrared transmitting whereas it is metallic and infrared reflecting above the transition temperature. However, in order to achieve significant thermochromic switching, the luminous transmittance of thin films will typically be less than 50%. Here we report on recent research to improve the luminous transmittance as well as the transmittance change at the transition temperature. We systematically evaluate the effect of antireflection coatings, doping with Mg and the performance of coatings comprising thermochromic nanoparticles in a transparent matrix. The last option is shown to give the best performance and holds great promise for practical applications.

  7. Ordered fragmentation of oxide thin films at submicron scale

    PubMed Central

    Guo, L.; Ren, Y.; Kong, L. Y.; Chim, W. K.; Chiam, S. Y.

    2016-01-01

    Crack formation is typically undesirable as it represents mechanical failure that compromises strength and integrity. Recently, there have also been numerous attempts to control crack formation in materials with the aim to prevent or isolate crack propagation. In this work, we utilize fragmentation, at submicron and nanometre scales, to create ordered metal oxide film coatings. We introduce a simple method to create modified films using electroplating on a prepatterned substrate. The modified films undergo preferential fragmentation at locations defined by the initial structures on the substrate, yielding ordered structures. In thicker films, some randomness in the characteristic sizes of the fragments is introduced due to competition between crack propagation and crack creation. The method presented allows patterning of metal oxide films over relatively large areas by controlling the fragmentation process. We demonstrate use of the method to fabricate high-performance electrochromic structures, yielding good coloration contrast and high coloration efficiency. PMID:27748456

  8. Cadmium-Tin Oxide Transparent Conductive Thin Films

    NASA Astrophysics Data System (ADS)

    Stapinski, T.; Leja, E.; Marszalek, K.

    1986-09-01

    Cadmium-tin oxide (CTO) films have been prepared by d.c. reactive sputtering of Cd-Sn alloy targets in Ar-02 gas mixture. The electrical, optical and structural properties as well as the chemical composition of transparent conducting CTO films were found to depend on sputtering conditions. The value of optical band gap, optical constants, effective mass and relaxation time of electrons have been determined.

  9. Photo-Activated Synthesis of Functional Oxide Thin Films

    DTIC Science & Technology

    2010-03-01

    o (d200 = 2.53 Å), corresponding to lattice constant ~ 5.07 Å. In cubic fluorite structure, lattice parameter (d) can be calculated from ionic...noted that aliovalently introduced oxygen vacancies have an effect on anion ionic radius, therefore lattice constant in doped fluorite structure cannot...denotes the dopant content.[26] This relation indicates that oxygen deficiency decreases the lattice constant of fluorite -structured oxides. It is

  10. Final Report - Effects of High Spinel and Chromium Oxide Crystal Contents on Simulated HLW Vitrification in DM100 Melter Tests, VSL-09R1520-1, Rev. 0, dated 6/22/09

    SciTech Connect

    Kruger, Albert A.; Matlack, K. S.; Kot, W.; Pegg, I. L.; Chaudhuri, M.; Lutze, W.

    2013-11-13

    The principal objective of the work was to evaluate the effects of spinel and chromium oxide particles on WTP HLW melter operations and potential impacts on melter life. This was accomplished through a combination of crucible-scale tests, settling and rheological tests, and tests on the DM100 melter system. Crucible testing was designed to develop and identify HLW glass compositions with high waste loadings that exhibit formation of crystalline spinel and/or chromium oxide phases up to relatively high crystal contents (i.e., > 1 vol%). Characterization of crystal settling and the effects on melt rheology was performed on the HLW glass formulations. Appropriate candidate HLW glass formulations were selected, based on characterization results, to support subsequent melter tests. In the present work, crucible melts were formulated that exhibit up to about 4.4 vol% crystallization.

  11. Thin-film solid-oxide fuel cells

    SciTech Connect

    Jankowski, A.F.

    1997-05-01

    Fuel cells are energy conversion devices that would save billions of dollars in fuel costs alone each year in the United States if they could be implemented today for stationary and transportation applications (1-5). There are a wide variety of fuel cells available, e.g. molten carbonate, phosphoric acid, proton exchange membrane and solid-oxide. However, solid-oxide fuel cells (SOFCS) are potentially more efficient and less expensive per kilowatt of power in comparison to other fuel cells. For transportation applications, the energy efficiency of a conventional internal combustion engine would be increased two-fold as replaced with a zero-emission SOFC. The basic unit of a SOFC consists of an anode and cathode separated by an oxygen-ion conducting, electrolyte layer. Manifolded stacks of fuel cells, with electrical interconnects, enable the transport and combination of a fuel and oxidant at elevated temperature to generate electrical current. Fuel cell development has proceeded along different paths based on the configuration of the anode-electrolyte-cathode. Various configurations include the tubular, monolithic and planar geometries. A planar geometry for the anode-electrolyte-cathode accompanied by a reduction in layer thickness offers the potential for high power density. Maximum power densities will require yet additional innovations in the assembly of fuel cell stacks with all of the manifolding stipulations for gas flow and electrical interconnects.

  12. Formation of surface oxides and Ag2O thin films with atomic oxygen on Ag(111)

    NASA Astrophysics Data System (ADS)

    Derouin, Jonathan; Farber, Rachael G.; Heslop, Stacy L.; Killelea, Daniel R.

    2015-11-01

    The nature of the oxygen species adsorbed to silver surfaces is a key component of the heterogeneously catalyzed epoxidation of ethylene and partial oxidation of methanol over silver catalysts. We report the formation of two different silver-oxygen species depending on the flux and energy of incident gas-phase oxygen atoms on an Ag(111) surface. A combination of surface science techniques was used to characterize the oxidized surfaces. Atomic oxygen was generated with an Ir filament; lower temperatures created surface oxides previously reported. When O was deposited with a higher filament temperature, the surface became highly corrugated, little subsurface oxygen was observed, and thin layers of Ag2O were likely formed. These results show that the energy and flux of oxygen are important parameters in the chemical identity and abundance of oxygen on silver surfaces and suggest that formation of the Ag2O thin film hinders formation of subsurface oxygen.

  13. Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region

    NASA Astrophysics Data System (ADS)

    Nguyen, Cam Phu Thi; Raja, Jayapal; Kim, Sunbo; Jang, Kyungsoo; Le, Anh Huy Tuan; Lee, Youn-Jung; Yi, Junsin

    2017-02-01

    This study examined the performance and the stability of indium tin zinc oxide (ITZO) thin film transistors (TFTs) by inserting an ultra-thin indium tin oxide (ITO) layer at the active/insulator interface. The electrical properties of the double channel device (ITO thickness of 5 nm) were improved in comparison with the single channel ITZO or ITO devices. The TFT characteristics of the device with an ITO thickness of less than 5 nm were degraded due to the formation of an island-like morphology and the carriers scattering at the active/insulator interface. The 5 nm-thick ITO inserted ITZO TFTs (optimal condition) exhibited a superior field effect mobility (∼95 cm2/V·s) compared with the ITZO-only TFTs (∼34 cm2/V·s). The best characteristics of the TFT devices with double channel layer are due to the lowest surface roughness (0.14 nm) and contact angle (50.1°) that result in the highest hydrophicility, and the most effective adhesion at the surface. Furthermore, the threshold voltage shifts for the ITO/ITZO double layer device decreased to 0.80 and -2.39 V compared with 6.10 and -6.79 V (for the ITZO only device) under positive and negative bias stress, respectively. The falling rates of EA were 0.38 eV/V and 0.54 eV/V for the ITZO and ITO/ITZO bi-layer devices, respectively. The faster falling rate of the double channel devices suggests that the trap density, including interface trap and semiconductor bulk trap, can be decreased by the ion insertion of a very thin ITO film into the ITZO/SiO2 reference device. These results demonstrate that the double active layer TFT can potentially be applied to the flat panel display.

  14. Cleaning-induced arsenic mobilization and chromium oxidation from CCA-wood deck: Potential risk to children.

    PubMed

    Gress, J; de Oliveira, L M; da Silva, E B; Lessl, J M; Wilson, P C; Townsend, T; Ma, L Q

    2015-09-01

    Concern about children's exposure to arsenic (As) from wood treated with chromated-copper-arsenate (CCA) led to its withdrawal from residential use in 2004. However, due to its effectiveness, millions of American homes still have CCA-wood decks on which children play. This study evaluated the effects of three deck-cleaning methods on formation of dislodgeable As and hexavalent chromium (CrVI) on CCA-wood surfaces and in leachate. Initial wipes from CCA-wood wetted with water showed 3-4 times more dislodgeable As than on dry wood. After cleaning with a bleach solution, 9.8-40.3μg/100cm(2) of CrVI was found on the wood surface, with up to 170μg/L CrVI in the leachate. Depending on the cleaning method, 699-2473mg of As would be released into the environment from cleaning a 18.6-m(2)-deck. Estimated As doses in children aged 1-6 after 1h of playing on a wet CCA-wood deck were 0.25-0.41μg/kg. This is the first study to identify increased dislodgeable As on wet CCA-wood and to evaluate dislodgeable CrVI after bleach application. Our data suggest that As and CrVI in 25-year old CCA-wood still show exposure risks for children and potential for soil contamination.

  15. Methods to protect and recover work function of air exposed transition metal oxide thin films

    NASA Astrophysics Data System (ADS)

    Irfan, Irfan; Wang, Chenggong; Turinske, Alexander J.; Gao, Yongli

    2012-09-01

    Insertion of high work function (WF) transition metal oxide (TMO) layers between the anode and the hole transport layer is established to substantially enhance the performance of organic light emitting diodes (OLED). The high WF of transition metal oxide layer has been demonstrated to be the most crucial for the enhancement. The WF of a TMO layer decreases substantially with air exposure, and noticeably by the ambient even inside a low vacuum system. In the present work we discuss various methods to protect and recover the high WF after a TMO thin film has been exposed to air. We report covering a thin organic layer on top of MoOx to protect the high work function. We found that a thin layer of 1-2 nm organic layer was sufficient to protect the work function of MoOx thin film underneath. We further report methods to recover already decreased TMO WF due to air exposure. We performed oxygen plasma cleaning of air exposed MoOx film and found out that oxygen plasma could substantially recover the WF of as deposited MoOx film. We also performed annealing of air exposed MoOx film inside an ultra high vacuum system and observed a thin layer of oxygenrich adsorbate layer, which desorbed upon annealing that in turn substantially recovered the MoOx WF. We discuss the vacuum annealing and the effect of resulting surface on the interface energy level alignment.

  16. Influence of chromium-enriched yeast on blood glucose and insulin variables, blood lipids, and markers of oxidative stress in subjects with type 2 diabetes mellitus.

    PubMed

    Racek, Jaroslav; Trefil, Ladislav; Rajdl, Daniel; Mudrová, Vlasta; Hunter, Douglas; Senft, VáClav

    2006-03-01

    The aim of this study was to determine the effect of chromium (Cr)- enriched yeast on blood glucose and insulin variables, blood lipids, and blood markers of oxidative stress in persons with type 2 diabetes mellitus (median duration: 3.0 yr). Thirty-six subjects (9 men, 27 women; mean age: 61.3 yr; mean body mass index: 34.33 kg/m2) were supplemented with 400 microg Cr/d as Cr-enriched yeast (n = 19) or placebo (n = 17) for 12 wk in a randomized, double-blind study. The most interesting results were obtained by comparison of the change in the placebo group to the change in the Cr group. The Cr group showed a significantly greater increase in serum Cr compared to the placebo group (p < 0.05). Supplementation with Cr-enriched yeast was associated with a significant decrease in fasting serum glucose compared to placebo (p < 0.01). Blood markers of oxidative stress glutathione peroxidase activity and levels of reduced glutathione were essentially unchanged in the Cr group after 12 wk, but decreased significantly in the placebo group (p < 0.05, p < 0.01, respectively). Serum HbA1c and glycated protein (fructosamine) were essentially unchanged in the Cr group, whereas HbA1c tended to increase in the placebo group (from 6.94% to 7.11%). Fasting serum insulin decreased in both groups, with a greater tendency in the Cr group (-16.5% vs -9.5%). These data suggest that supplementation of well-controlled type 2 diabetics with Cr-enriched yeast is safe and can result in improvements in blood glucose variables and oxidative stress.

  17. Optimization of Dimensionless Figure of Merit in Oxide Thin Film Thermoelectrics

    NASA Astrophysics Data System (ADS)

    Osborne, Daniel; Huxtable, Scott; Tiwari, Ashutosh; Abiade, Jeremiah

    2010-03-01

    The ability of uniquely functional thermoelectric materials to convert waste heat directly into electricity is critical considering the global energy economy. Profitable, energy-efficient thermoelectrics possess thermoelectric figures of merit ZT >= 1. We examined the effect of metal nanoparticle -- oxide film interfaces on the thermal conductivity κ and Seebeck coefficient S in bilayer and multilayer thin film oxide thermoelectrics in an effort to improve the dimensionless figure of merit ZT. Since a thermoelectric's figure of merit ZT is directly proportional to S/κ, reducing κ and increasing S are key strategies to optimize ZT. We reduced κ by phonon scattering due to the inclusion of metal nanoparticles in the bulk of the thermoelectric thin film, and increased S due to energy-dependent electron scattering at the metal - oxide interfaces. Doped strontium titanate (STO) thin film/Au nanoparticle composites were synthesized by alternate ablation of Au and Nb-doped STO targets during pulsed laser deposition. Characterization of the thermoelectric films involve XRD, XPS, and TEM analyses, Seebeck coefficient measurements, and also measurements of the thermal conductivity via time-domain thermoreflectance. The measured thermal conductivities and Seebeck coefficients of the thin films shows a strong dependence on the nanoscale interfaces of the films.

  18. A novel thin film solid oxide fuel cell for microscale energy conversion

    SciTech Connect

    Jankowiski, A F; Morse, J D

    1999-05-01

    A novel approach for the fabrication and assembly of a solid oxide fuel cell system is described which enables effective scaling of the fuel delivery, mainfold, and fuel cell stack components for applications in miniature and microscale energy conversion. Electrode materials for solid oxide fuel cells are developed using sputter deposition techniques. A thin film anode is formed by codeposition of nickel and yttria-stabilized zirconia (YSZ). This approach provides a mixed conducting interfacial layer between the nickel electrode and electrolyte layer. Similarly, a thin film cathode is formed by co-deposition of silver and yttria-stabilized zirconia. Additionally, sputter deposition of yttria-stabilized zirconia thin film electrolyte enables high quality, continuous films to be formed having thickness on the order of 1-2 {micro}m. This will effectively lower the temperature of operation for the fuel cell stack significantly below the traditional ranges at which solid oxide electrolyte systems are operated (600--1000 C), thereby rendering this fuel cell system suitable for miniaturization. Scaling towards miniaturization is accomplished by utilizing novel micromaching approaches which allow manifold channels and fuel delivery system to be formed within the substrate which the thin film fuel cell stack is fabricated on, thereby circumventing the need for bulky manifold components which are not directly scalable.

  19. Fabrication of Fe-Al nanoparticles by selective oxidation of Fe-Al thin films

    NASA Astrophysics Data System (ADS)

    Jang, Pyungwoo; Shin, Seungchan; Jung, Chip-Sup; Kim, Kwang-Ho; Seomoon, Kyu

    2013-04-01

    The possibility of a new technique for fabricating nanoparticles from thin films using selective oxidation in an atmosphere mixture of water vapor and hydrogen was investigated. Fe-5wt.%Al films were RF-sputtered and annealed in the atmosphere mixture at 900°C for up to 200 min, in order to oxidize aluminum selectively. Thermodynamics simulation showed that temperatures exceeding 800°C are necessary to prevent iron from being oxidized, as confirmed by the depth profile of XPS. As the annealing time increased, the morphology of the 200-nm Fe-Al films changed from the continuous to the discontinuous type; thus, particulate Fe-Al films formed after 100 min. The particulate 10- to 100-nm Fe-Al films showed super-paramagnetic behavior after the oxidation. Thus, a new technique for fabricating nanoparticles was successfully introduced using selective oxidation.

  20. Investigations on bactericidal properties of molybdenum-tungsten oxides combinatorial thin film material libraries.

    PubMed

    Mardare, Cezarina Cela; Hassel, Achim Walter

    2014-11-10

    A combinatorial thin film material library from the molybdenum-tungsten refractory metals oxides system was prepared by thermal coevaporation, and its structural and morphological properties were investigated after a multiple step heat treatment. A mixture of crystalline and amorphous oxides and suboxides was obtained, as well as surface structuring caused by the enrichment of molybdenum oxides in large grains. It was found that the oxide phases and the surface morphology change as a function of the compositional gradient. Tests of the library antimicrobial activity against E. coli were performed and the antimicrobial activity was proven in some defined compositional ranges. A mechanism for explaining the observed activity is proposed, involving a collective contribution from (i) increased local acidity due to the enrichment in large grains of molybdenum oxides with different stoichiometry and (ii) the release of free radicals from the W18O49 phase under visible light.

  1. Functional Multilayered Transparent Conducting Oxide Thin Films for Photovoltaic Devices

    SciTech Connect

    Noh, J. H.; Lee, S.; Kim, J. Y.; Lee, J. K.; Han, H. S.; Cho, C. M.; Cho, I. S.; Jung, H. S.; Hong, K. S.

    2009-01-01

    In this study, we present a thermally stable multilayered transparent conducting oxide (TCO) functionalized for dye-sensitized solar cells (DSSCs). Nb-doped TiO{sub 2} (NTO) layers deposited on conventional Sn-doped In{sub 2}O{sub 3} (ITO) substrates using pulsed laser deposition (PLD) enhanced the optical-to-electrical conversion efficiency of the DSSCs by as much as 17% compared to that of bare ITO-based DSSCs. The electrical properties and J-V characteristics of the multilayered NTO/ITO films showed that the improved cell performance was due to the facilitated charge injection from TiO{sub 2} to ITO that resulted from the formation of an ohmic contact with ITO, as well as the conserved high conductivity of ITO after the oxidizing annealing process. Moreover, the NTO/ITO-based DSSC exhibited higher efficiency than a F-doped SnO{sub 2}(FTO)-based one, which demonstrates that optimization of multilayered NTO-based TCOs is a realistic approach for achieving highly efficient photoenergy conversion devices.

  2. CSA doped polypyrrole-zinc oxide thin film sensor

    NASA Astrophysics Data System (ADS)

    Chougule, M. A.; Jundale, D. M.; Raut, B. T.; Sen, Shashwati; Patil, V. B.

    2013-02-01

    The polypyrrole-zinc oxide (PPy-ZnO) hybrid sensor doped with different weight ratios of camphor sulphonic acid (CSA) were prepared by spin coating technique. These CSA doped PPy-ZnO hybrids were characterized by field emission scanning electron microscope (FESEM) and fourier transform infrared (FTIR) which proved the formation of polypyrrole, PPy-ZnO and the interaction between polypyrrole - ZnO (PPy-ZnO) hybrid with CSA doping. The gas sensing properties of the PPy-ZnO hybrid films doped with CSA have been studied for oxidizing (NO2) as well as reducing (H2S, NH3, CH4OH and CH3OH) gases at room temperature. We demonstrate that CSA doped PPy-ZnO hybrid films are highly selective to NO2 along with high-sensitivity at low concentration (80% to 100 ppm) and better stability, which suggested that the CSA doped PPy-ZnO hybrid films are potential candidate for NO2 detection at room temperature.

  3. Study on mixed vanadium oxide thin film deposited by RF magnetron sputtering and its application

    NASA Astrophysics Data System (ADS)

    Ling, Zhang; Jianhui, Tu; Hao, Feng; Jingzhong, Cui

    Vanadium oxide (VOx) thin films were deposited on fused quartz using a pure metal vanadium target by RF reactive magnetron sputtering technique. Film microstructure, valence state, optical transmittance properties were studied. The mixed valence VOx thin films deposited with different thickness were found to be amorphous. And the optical transmittance curves are flatness in certain wavelength region. These films can be used to control the relative light intensity of the rubidium light beam between the rubidium lamp and the vapor cell, in order to optimize the working parameters of the rubidium frequency standard (RAFS).

  4. Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Zhou, Dayu; Müller, J.; Xu, Jin; Knebel, S.; Bräuhaus, D.; Schröder, U.

    2012-02-01

    Silicon doped hafnium oxide thin films were recently discovered to exhibit ferroelectricity. In the present study, metal-ferroelectric-metal capacitors with Si:HfO2 thin films as ferroelectric material and TiN as electrodes have been characterized with respect to capacitance and current density as functions of temperature and applied voltage. Polarity asymmetry of the frequency dependent coercive field was explained by interfacial effects. No ferroelectric-paraelectric phase transition was observed at temperatures up to 478 K. Clear distinctions between current evolutions with or without polarization switching were correlated to the time competition between the measurement and the response of relaxation mechanisms.

  5. Damp-Heat Induced Degradation of Transparent Conducting Oxides for Thin Film Solar Cells (Presentation)

    SciTech Connect

    Pern, J.; Noufi, R.; Li, X.; DeHart, C.; To, B.

    2008-05-01

    The objectives are: (1) To achieve a high long-term performance reliability for the thin-film CIGS PV modules with more stable materials, device structure designs, and moisture-resistant encapsulation materials and schemes; (2) to evaluate the DH stability of various transparent conducting oxides (TCOs); (3) to identify the degradation mechanisms and quantify degradation rates; (4) to seek chemical and/or physical mitigation methods, and explore new materials. It's important to note that direct exposure to DH represents an extreme condition that a well-encapsulated thin film PV module may never experience.

  6. Rayleigh instability in polymer thin films coated in the nanopores of anodic aluminum oxide templates.

    PubMed

    Tsai, Chia-Chan; Chen, Jiun-Tai

    2014-01-14

    We study the Rayleigh instability of polystyrene (PS) thin films coated in the nanopores of anodic aluminum oxide (AAO) templates. After thermal annealing, the surface of the PS thin films undulates and the nanostructures transform from nanotubes to Rayleigh-instability-induced nanostructures (short nanorods with encapsulated air bubbles). With longer annealing times, the nanostructures further transform to nanorods with longer lengths. PS samples with two different molecular weights (24 and 100 kg/mol) are used, and their instability transformation processes are compared. The morphology diagrams of the nanostructures at different stages are also constructed to elucidate the mechanism of the morphology transformation.

  7. Improved Transparent Conducting Oxides Boost Performance of Thin-Film Solar Cells (Fact Sheet)

    SciTech Connect

    Not Available

    2011-02-01

    Today?s thin-film solar cells could not function without transparent conducting oxides (TCOs). TCOs act as a window, both protecting the cell and allowing light to pass through to the cell?s active layers. Until recently, TCOs were seen as a necessary, but static, layer of a thin-film photovoltaic (PV) cell. But a group of researchers at the National Renewable Energy Laboratory (NREL) has identified a pathway to producing improved TCO films that demonstrate higher infrared transparency. To do so, they have modified the TCOs in ways that did not seem possible a few years ago.

  8. The microstructures and electrical properties of Y-doped amorphous vanadium oxide thin films

    NASA Astrophysics Data System (ADS)

    Gu, Deen; Zhou, Xin; Guo, Rui; Wang, Zhihui; Jiang, Yadong

    2017-03-01

    One of promising approaches for further improving the sensitivity of microbolometer arrays with greatly-reduced pixel size is using the thermal-sensitive materials with higher performance. In this paper, Y-doped vanadium oxide (VOx) thin films prepared by a reactively sputtering process exhibit enhanced performance for the microbolometer application compared with frequently-applied VOx thin films. Both undoped and Y-doped VOx thin films are amorphous due to the relatively low deposition temperature. Y-doped VOx thin films exhibit smoother surface morphology than VOx due to the restrained expansion of particles during depositions. Y-doping increases the temperature coefficient of resistivity by over 20% for the doping level of 1.30 at%. The change rate of resistivity, after aging for 72 h, of thin films was reduced from about 15% for undoped VOx to 2% due to the introduction of Y. Moreover, Y-doped VOx thin films have a low 1/f noise level as VOx ones. Y-doping provides an attractive approach for preparing VOx thermal-sensitive materials with enhanced performance for microbolometers.

  9. Citric acid enhances the phytoextraction of chromium, plant growth, and photosynthesis by alleviating the oxidative damages in Brassica napus L.

    PubMed

    Afshan, Sehar; Ali, Shafaqat; Bharwana, Saima Aslam; Rizwan, Muhammad; Farid, Mujahid; Abbas, Farhat; Ibrahim, Muhammad; Mehmood, Muhammad Aamer; Abbasi, Ghulam Hasan

    2015-08-01

    Chromium (Cr) toxicity is widespread in crops grown on Cr-contaminated soils and has become a serious environmental issue which requires affordable strategies for the remediation of such soils. This study was performed to assess the performance of citric acid (CA) through growing Brassica napus in the phytoextraction of Cr from contaminated soil. Different Cr (0, 100, and 500 μM) and citric acid (0, 2.5, and 5.0 mM) treatments were applied alone and in combinations to 4-week-old seedlings of B. napus plants in soil under wire house condition. Plants were harvested after 12 weeks of sowing, and the data was recorded regarding growth characteristics, biomass, photosynthetic pigments, malondialdehyde (MDA), electrolytic leakage (EL), antioxidant enzymes, and Cr uptake and accumulation. The results showed that the plant growth, biomass, chlorophyll contents, and carotenoid as well as soluble protein concentrations significantly decreased under Cr stress alone while these adverse effects were alleviated by application of CA. Cr concentration in roots, stem, and leaves of CA-supplied plant was significantly reduced while total uptake of Cr increased in all plant parts with CA application. Furthermore, in comparison with Cr treatments alone, CA supply reduced the MDA and EL values in both shoots and roots. Moreover, the activity of superoxide dismutase (SOD), guaiacol peroxidase (POD), catalase (CAT), and ascorbate peroxidase (APX) in shoots and roots markedly increased by 100 μM Cr exposure, while decreased at 500 μM Cr stress. CA application enhanced the activities of antioxidant enzymes compared to the same Cr treatment alone. Thus, the data indicate that exogenous CA application can increase Cr uptake and can minimize Cr stress in plants and may be beneficial in accelerating the phytoextraction of Cr through hyper-accumulating plants such as B. napus.

  10. Phase transitions via selective elemental vacancy engineering in complex oxide thin films

    NASA Astrophysics Data System (ADS)

    Lee, Sang A.; Jeong, Hoidong; Woo, Sungmin; Hwang, Jae-Yeol; Choi, Si-Young; Kim, Sung-Dae; Choi, Minseok; Roh, Seulki; Yu, Hosung; Hwang, Jungseek; Kim, Sung Wng; Choi, Woo Seok

    2016-04-01

    Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, O vacancies have been a key ingredient in defect engineering, as they play a central role in determining the crystal field and consequent electronic structure, leading to important electronic and magnetic phase transitions. Therefore, experimental approaches toward understanding the role of defects in complex oxides have been largely limited to controlling O vacancies. In this study, we report on the selective formation of different types of elemental vacancies and their individual roles in determining the atomic and electronic structures of perovskite SrTiO3 (STO) homoepitaxial thin films fabricated by pulsed laser epitaxy. Structural and electronic transitions have been achieved via selective control of the Sr and O vacancy concentrations, respectively, indicating a decoupling between the two phase transitions. In particular, O vacancies were responsible for metal-insulator transitions, but did not influence the Sr vacancy induced cubic-to-tetragonal structural transition in epitaxial STO thin film. The independent control of multiple phase transitions in complex oxides by exploiting selective vacancy engineering opens up an unprecedented opportunity toward understanding and customizing complex oxide thin films.

  11. Phase transitions via selective elemental vacancy engineering in complex oxide thin films

    PubMed Central

    Lee, Sang A.; Jeong, Hoidong; Woo, Sungmin; Hwang, Jae-Yeol; Choi, Si-Young; Kim, Sung-Dae; Choi, Minseok; Roh, Seulki; Yu, Hosung; Hwang, Jungseek; Kim, Sung Wng; Choi, Woo Seok

    2016-01-01

    Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, O vacancies have been a key ingredient in defect engineering, as they play a central role in determining the crystal field and consequent electronic structure, leading to important electronic and magnetic phase transitions. Therefore, experimental approaches toward understanding the role of defects in complex oxides have been largely limited to controlling O vacancies. In this study, we report on the selective formation of different types of elemental vacancies and their individual roles in determining the atomic and electronic structures of perovskite SrTiO3 (STO) homoepitaxial thin films fabricated by pulsed laser epitaxy. Structural and electronic transitions have been achieved via selective control of the Sr and O vacancy concentrations, respectively, indicating a decoupling between the two phase transitions. In particular, O vacancies were responsible for metal-insulator transitions, but did not influence the Sr vacancy induced cubic-to-tetragonal structural transition in epitaxial STO thin film. The independent control of multiple phase transitions in complex oxides by exploiting selective vacancy engineering opens up an unprecedented opportunity toward understanding and customizing complex oxide thin films. PMID:27033718

  12. Synthesis and characterization of low work function alkali oxide thin films for unconventional thermionic energy converters

    NASA Astrophysics Data System (ADS)

    Giorgis, V.; Morini, F.; Zhu, T.; Robillard, J.-F.; Wallart, X.; Codron, J.-L.; Dubois, E.

    2016-11-01

    In this work, we present the synthesis and the characterization of low work function thin films for Micro Thermionic Converters (MTC). The objective is producing a device operating at relatively low temperature (<1000 K). We aim at improving the MTC efficiency by reducing the work function of the electrodes and increasing the emitted current density by alkali metal oxides electrodes coating. In particular, in this work, we analyse and compare the performances of two alkali metal oxides: potassium and caesium oxides. Our choice to exploit those materials relies on their low work function and their abundance. For both materials, we present the results on the synthesis of the oxides under high vacuum and controlled temperature. The oxide thin films were characterized by X-ray photoelectron spectroscopy, photoemission, and thermionic emission measurements. By exploiting the latter technique, a quantitative evaluation of the current density, emitted by the heated oxides, is obtained as a function of temperature. Our results demonstrate that it is possible to decrease the silicon work function by almost 3 eV, enabling significant thermionic currents despite relatively low temperatures (below 850 K).

  13. Glucose-assisted reduction achieved transparent p-type cuprous oxide thin film by a solution method

    NASA Astrophysics Data System (ADS)

    Nie, Sha; Sun, Jian; Gong, Hao; Chen, Zequn; Huang, Yifei; Xu, Jianmei; Zhao, Ling; Zhou, Wei; Wang, Qing

    2016-08-01

    The fabrication of p-type cuprous oxide thin film via a cheap and simple chemical method has been known as challenging. We first find that glucose can assist reduce Cu to a lower valence state in the preparation of cuprous oxide films by the sol-gel method. By first adding glucose in the sol as reducing agent, oxidation from the oxygen in the environment is limited and transparent p-type cuprous oxide films are eventually achieved under optimized experimental conditions. We have developed a p-type cuprous oxide thin film with an optimal Hall mobility of ∼8 cm2/Vs and an optical transmittance of 78%.

  14. Interface engineered multifunctional oxide thin films with optimized properties

    NASA Astrophysics Data System (ADS)

    Collins, Gregory Roy

    2010-06-01

    In our world today, energy has become one of the most valuable resources, in particular, renewable and clean energy sources. The research presented here represents an investigation into three separate areas of this topic. In thin film applications, the ordered structures as well as the inherent thinness of the films precludes the normal physics found in bulk materials. Characterizations of films of this type can provide information on molecular level charge transfer processes of the film layer materials since diffusive properties are minimal. With the control given by pulsed laser deposition methods, film and interface structure can be altered allowing for an examination of these effects on the materials properties. For the electrolyte and cathode materials, this equates to finding thermal and PO2 dependencies for electronic and ionic transport. For barium titanate, aside from the effects of oxygen vacancies, the interface quality between the electrodes and the ferroelectric material determines the effectiveness of energy transfer between these boundaries. That is, poor bonding characteristics or the formation of intermediate layers will introduce inconsistencies and (possibly) unwanted piezoelectric response properties of the material which could introduce parasitic dampening (resistance) of the mechanical vibrations of a piezoelectric transducer, altering its resonant characteristics. The clean reaction products and potential for high power outputs provide a strong impetus into investigations of fuel cell structures to improve their functionality. With conventional applications being dominated by high temperature (>700 °C) cells utilizing YSZ as an electrolyte medium, much gain can be made in efficiency through the lowering of cell operation temperature. The first part of my research focuses on the growth and characterization of a novel multilayered electrolyte structure consisting of alternating layers of GCO and YSZ for use in a medium temperature (400--600

  15. Enhanced optical constants of nanocrystalline yttrium oxide thin films

    SciTech Connect

    Ramana, C. V.; Mudavakkat, V. H.; Bharathi, K. Kamala; Atuchin, V. V.; Pokrovsky, L. D.; Kruchinin, V. N.

    2011-01-17

    Yttrium oxide (Y{sub 2}O{sub 3}) films with an average crystallite-size (L) ranging from 5 to 40 nm were grown by sputter-deposition onto Si(100) substrates. The optical properties of grown Y{sub 2}O{sub 3} films were evaluated using spectroscopic ellipsometry measurements. The size-effects were significant on the optical constants and their dispersion profiles of Y{sub 2}O{sub 3} films. A significant enhancement in the index of refraction (n) is observed in well-defined Y{sub 2}O{sub 3} nanocrystalline films compared to that of amorphous Y{sub 2}O{sub 3}. A direct, linear L-n relationship found for Y{sub 2}O{sub 3} films suggests that tuning optical properties for desired applications can be achieved by controlling the size at the nanoscale dimensions.

  16. Continuously controlled optical band gap in oxide semiconductor thin films

    SciTech Connect

    Herklotz, Andreas; Rus, Stefania Florina; Ward, Thomas Zac

    2016-02-02

    The optical band gap of the prototypical semiconducting oxide SnO2 is shown to be continuously controlled through single axis lattice expansion of nanometric films induced by low-energy helium implantation. While traditional epitaxy-induced strain results in Poisson driven multidirectional lattice changes shown to only allow discrete increases in bandgap, we find that a downward shift in the band gap can be linearly dictated as a function of out-of-plane lattice expansion. Our experimental observations closely match density functional theory that demonstrates that uniaxial strain provides a fundamentally different effect on the band structure than traditional epitaxy-induced multiaxes strain effects. In conclusion, charge density calculations further support these findings and provide evidence that uniaxial strain can be used to drive orbital hybridization inaccessible with traditional strain engineering techniques.

  17. Continuously controlled optical band gap in oxide semiconductor thin films

    DOE PAGES

    Herklotz, Andreas; Rus, Stefania Florina; Ward, Thomas Zac

    2016-02-02

    The optical band gap of the prototypical semiconducting oxide SnO2 is shown to be continuously controlled through single axis lattice expansion of nanometric films induced by low-energy helium implantation. While traditional epitaxy-induced strain results in Poisson driven multidirectional lattice changes shown to only allow discrete increases in bandgap, we find that a downward shift in the band gap can be linearly dictated as a function of out-of-plane lattice expansion. Our experimental observations closely match density functional theory that demonstrates that uniaxial strain provides a fundamentally different effect on the band structure than traditional epitaxy-induced multiaxes strain effects. In conclusion, chargemore » density calculations further support these findings and provide evidence that uniaxial strain can be used to drive orbital hybridization inaccessible with traditional strain engineering techniques.« less

  18. Consequence of oxidant to monomer ratio on optical and structural properties of Polypyrrole thin film deposited by oxidation polymerization technique

    NASA Astrophysics Data System (ADS)

    Jatratkar, Aviraj A.; Yadav, Jyotiprakash B.; Kamat, Sandip V.; Patil, Vaishali S.; Mahadik, D. B.; Barshilia, Harish C.; Puri, Vijaya; Puri, R. K.

    2015-05-01

    This paper reports the effect of oxidant to monomer (O/M) ratio on optical and structural properties of Polypyrrole (PPy) thin film deposited by chemical oxidation polymerization technique. Noticeable changes have observed in the properties of PPy thin films with O/M ratio. Cauliflower structure have been observed in FE-SEM images, wherein grain size is observed to decrease with increase in O/M ratio. AFM results are in good agreement with FE-SEM results. From FTIR spectra it is found that, PPy is in highly oxidized form at low O/M ratio but oxidation decreased with increase in O/M ratio. Also C-C stretching vibrations of PPy ring is decreased whereas C=C stretching is increased with ratio. Absorption peak around 450 nm corresponds to π-π* transition and around 800 nm for polarons and bipolarons. The intensity of such peaks confirms the conductivity of PPy, which is observed maximum at low O/M ratio and found to decrease with increase in ratio. Optical band gap (BG) is found to increase from 2.07 eV to 2.11 eV with increase in the O/M ratio.

  19. Preparation of explosive nanoparticles in a porous chromium(III) oxide matrix: a first attempt to control the reactivity of explosives.

    PubMed

    Comet, M; Siegert, B; Pichot, V; Gibot, P; Spitzer, D

    2008-07-16

    This paper reports the first attempt to control the combustion and the detonation properties of a high explosive through its structure. A porous chromium(III) oxide matrix produced by the combustion of ammonium dichromate was infiltrated by hexahydro-1,3,5-trinitro-1,3,5-triazine (RDX). The structure of the Cr(2)O(3) matrix was studied by both scanning and transmission electron microscopy (SEM, TEM); the Cr(2)O(3)/RDX nanocomposites were characterized by nitrogen adsorption. A mathematical model based on these techniques was used to demonstrate that the Cr(2)O(3) matrix encloses and stabilizes RDX particles at the nanoscale. The decomposition process of the nanocomposites was investigated by atomic force microscopy (AFM). The reactivity and sensitivity of the nanocomposites were studied by impact and friction tests, differential scanning calorimetry (DSC), time-resolved cinematography and detonation experiments, and were correlated with their structure. The size of RDX nanoparticles and their distribution in the Cr(2)O(3) matrix have an important influence on their reactivity. The reactive properties of nanostructured RDX differ significantly from those of classical micron-sized RDX. For instance, the melting point disappears and the decomposition temperature is significantly lowered. The quantization of the explosive particles in the Cr(2)O(3) matrix decreases the sensitivity to mechanical stress and allows controlling the decomposition mode-i.e. combustion versus detonation.

  20. Preparation of explosive nanoparticles in a porous chromium(III) oxide matrix: a first attempt to control the reactivity of explosives

    NASA Astrophysics Data System (ADS)

    Comet, M.; Siegert, B.; Pichot, V.; Gibot, P.; Spitzer, D.

    2008-07-01

    This paper reports the first attempt to control the combustion and the detonation properties of a high explosive through its structure. A porous chromium(III) oxide matrix produced by the combustion of ammonium dichromate was infiltrated by hexahydro-1,3,5-trinitro-1,3,5-triazine (RDX). The structure of the Cr2O3 matrix was studied by both scanning and transmission electron microscopy (SEM, TEM); the Cr2O3/RDX nanocomposites were characterized by nitrogen adsorption. A mathematical model based on these techniques was used to demonstrate that the Cr2O3 matrix encloses and stabilizes RDX particles at the nanoscale. The decomposition process of the nanocomposites was investigated by atomic force microscopy (AFM). The reactivity and sensitivity of the nanocomposites were studied by impact and friction tests, differential scanning calorimetry (DSC), time-resolved cinematography and detonation experiments, and were correlated with their structure. The size of RDX nanoparticles and their distribution in the Cr2O3 matrix have an important influence on their reactivity. The reactive properties of nanostructured RDX differ significantly from those of classical micron-sized RDX. For instance, the melting point disappears and the decomposition temperature is significantly lowered. The quantization of the explosive particles in the Cr2O3 matrix decreases the sensitivity to mechanical stress and allows controlling the decomposition mode—i.e. combustion versus detonation.

  1. Chromium - blood test

    MedlinePlus

    ... work in the following industries: Leather tanning Electroplating Steel manufacturing Decreased chromium level only occurs in people who receive all of their nutrition by vein (total parenteral nutrition or TPN) and do not get enough chromium.

  2. Chromium in diet

    MedlinePlus

    Chromium deficiency may be seen as impaired glucose tolerance. It occurs in older people with type 2 diabetes and in infants with protein-calorie malnutrition. Taking chromium supplements can help manage these conditions. However, ...

  3. Impact of chromium dinicocysteinate supplementation on inflammation, oxidative stress, and insulin resistance in type 2 diabetic subjects: an exploratory analysis of a randomized, double-blind, placebo-controlled study

    PubMed Central

    Saiyed, Zainulabedin M.; Lugo, James P.

    2016-01-01

    Background Chromium dinicocysteinate (CDNC) is a unique chromium complex consisting of chromium, niacin, and L-cysteine. Previous preclinical and clinical studies support the safety and efficacy of CDNC in modulating oxidative stress, vascular inflammation, and glycemia in type 2 diabetes. Objective Herein, we report the results of several exploratory analyses conducted on type 2 diabetic subjects who previously participated in a 3-month randomized, double-blind, placebo-controlled trial and were treated with only metformin as standard diabetic care in addition to receiving the test supplementations. Design Results from 43 metformin users, who were randomly assigned to receive either placebo (P, n=13), chromium picolinate (CP, 400 µg elemental Cr3+/day, n=12), or CDNC (400 µg elemental Cr3+/day, n=18), were analyzed for blood markers of vascular inflammation, insulin resistance, and oxidative stress at baseline and at 3 months of supplementation. Results A statistically significant decrease in insulin resistance in the CDNC-supplemented cohort compared to placebo (p=0.01) was observed at 3 months. The CDNC group also demonstrated a significant reduction in insulin levels (p=0.03), protein carbonyl (p=0.02), and in TNF-α (p=0.03) compared to the placebo group. The CP group only showed a significant reduction in protein carbonyl levels (p=0.03) versus placebo. Conclusions When controlling for diabetes medication, CDNC supplementation showed beneficial effects on blood markers of vascular inflammation, insulin resistance, and oxidative stress compared to placebo. The findings suggest that CDNC supplementation has potential as an adjunct therapy for individuals with type 2 diabetes. PMID:27687012

  4. Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors

    NASA Astrophysics Data System (ADS)

    Wu, Shao-Hang; Zhang, Nan; Hu, Yong-Sheng; Chen, Hong; Jiang, Da-Peng; Liu, Xing-Yuan

    2015-10-01

    Strontium-zinc-oxide (SrZnO) films forming the semiconductor layers of thin-film transistors (TFTs) are deposited by using ion-assisted electron beam evaporation. Using strontium-oxide-doped semiconductors, the off-state current can be dramatically reduced by three orders of magnitude. This dramatic improvement is attributed to the incorporation of strontium, which suppresses carrier generation, thereby improving the TFT. Additionally, the presence of strontium inhibits the formation of zinc oxide (ZnO) with the hexagonal wurtzite phase and permits the formation of an unusual phase of ZnO, thus significantly changing the surface morphology of ZnO and effectively reducing the trap density of the channel. Project supported by the National Natural Science Foundation of China (Grant No. 6140031454) and the Innovation Program of Chinese Academy of Sciences and State Key Laboratory of Luminescence and Applications.

  5. Chromium-histidinate ameliorates productivity in heat-stressed Japanese quails through reducing oxidative stress and inhibiting heat-shock protein expression.

    PubMed

    Akdemir, F; Sahin, N; Orhan, C; Tuzcu, M; Sahin, K; Hayirli, A

    2015-04-01

    An experiment was conducted to evaluate the effects of a histidine complex of chromium (chromium histidinate, CrHis) on egg production, lipid peroxidation and the expression of hepatic nuclear factor kappa-light-chain-enhancer of activated B cells (NF-κB) and heat-shock proteins (HSPs) in Japanese quails (Coturnix coturnix japonica) exposed to heat stress (HS). A total of 180 5-week-old female quails were reared either at 22°C for 24 h/d (thermoneutral, TN) or 34°C for 8 h/d (heat stress, HS) for 12 weeks. Birds in both environments were randomly given one of three diets: basal diet and basal diet supplemented with 400 or 800 µg of elemental Cr as CrHis per kg of diet. Blood, egg yolk and liver samples collected at the end of the trial were analysed to determine concentrations of cholesterol and malondialdehyde (MDA) and expressions of transcription and heat-shock proteins. Exposure to HS caused reductions in feed intake (-8.1%) and egg production (-15.8%), elevations in serum (14.8%) and egg-yolk (29.0%) cholesterol concentrations, decreases in serum (113%) and egg-yolk (73.0%) MDA concentrations and increases in the expressions of hepatic NF-κB (52.3%) and HSPs (averaging 53.6%). The effects of increasing supplemental CrHis on the response variables were more notable in the HS environment than in the TN environment. There were considerable improvements in feed intake and egg production, decreases in serum and egg-yolk cholesterol concentrations and suppressions in the expressions of hepatic nuclear protein and HSPs in response to increasing supplemental CrHis concentration in the diet of quails reared under the HS environment. In conclusion, supplemental CrHis improves productivity through alleviating oxidative stress and modulating the expressions of hepatic NF-κB and HSPs in heat-stressed quails.

  6. Postnatal exposure to chromium through mother's milk accelerates follicular atresia in F1 offspring through increased oxidative stress and depletion of antioxidant enzymes.

    PubMed

    Stanley, Jone A; Sivakumar, Kirthiram K; Nithy, Thamizh K; Arosh, Joe A; Hoyer, Patricia B; Burghardt, Robert C; Banu, Sakhila K

    2013-08-01

    Hexavalent chromium, CrVI, is a heavy metal endocrine disruptor, known as a mutagen, teratogen, and a group A carcinogen. Environmental contamination with CrVI, including drinking water, has been increasing in more than 30 cities in the United States. CrVI is rapidly converted to CrIII intracellularly, and CrIII can cause DNA strand breaks and cancer or apoptosis through different mechanisms. Our previous study demonstrated that lactational exposure to chromium results in a delay or arrest in follicle development and a decrease in steroid hormone levels in F1 female rats, both of which are mitigated (partial inhibition) by vitamin C. The current study tested the hypothesis that lactational exposure to CrIII accelerates follicle atresia in F1 offspring by increasing reactive oxygen species (ROS) and decreasing cellular antioxidants. Results showed that lactational exposure to CrIII dose-dependently increased follicular atresia and decreased steroidogenesis in postnatal day 25, 45, and 65 rats. Vitamin C mitigated or inhibited the effects of CrIII at all doses. CrIII increased hydrogen peroxide and lipid hydroperoxide in plasma and ovary; decreased the antioxidant enzymes (AOXs) GPx1, GR, SOD, and catalase; and increased glutathione S-transferase in plasma and ovary. To understand the effects of CrVI on ROS and AOXs in granulosa (GC) and theca (TC) cell compartments in the ovary, ROS levels and mRNA expression of cytosolic and mitochondrial AOXs, such as SOD1, SOD2, catalase, GLRX1, GSTM1, GSTM2, GSTA4, GR, TXN1, TXN2, TXNRD2, and PRDX3, were studied in GCs and TCs and in a spontaneously immortalized granulosa cell line (SIGC). Overall, CrVI downregulated each of the AOXs; and vitamin C mitigated the effects of CrVI on these enzymes in GCs and SIGCs, but failed to mitigate CrVI effects on GSTM1, GSTM2, TXN1, and TXN2 in TCs. Thus, these data for the first time reveal that lactational exposure to CrIII accelerated follicular atresia and decreased steroidogenesis in F1

  7. Postnatal exposure to chromium through mother’s milk accelerates follicular atresia in F1 offspring through increased oxidative stress and depletion of antioxidant enzymes

    PubMed Central

    Stanley, Jone A.; Sivakumar, Kirthiram K.; Nithy, Thamizh K.; Arosh, Joe A.; Hoyer, Patricia B.; Burghardt, Robert C.; Banu, Sakhila K.

    2013-01-01

    Hexavalent chromium, CrVI, is a heavy metal endocrine disruptor, known as a mutagen, teratogen, and a group A carcinogen. Environmental contamination with CrVI, including drinking water, has been increasing in more than 30 cities in the United States. CrVI is rapidly converted to CrIII intracellularly, and CrIII can cause DNA strand breaks and cancer or apoptosis through different mechanisms. Our previous study demonstrated that lactational exposure to chromium results in a delay or arrest in follicle development and a decrease in steroid hormone levels in F1 female rats, both of which are mitigated (partial inhibition) by vitamin C. The current study tested the hypothesis that lactational exposure to CrIII accelerates follicle atresia in F1 offspring by increasing reactive oxygen species (ROS) and decreasing cellular antioxidants. Results showed that lactational exposure to CrIII dose-dependently increased follicular atresia and decreased steroidogenesis in postnatal day 25, 45, and 65 rats. Vitamin C mitigated or inhibited the effects of CrIII at all doses. CrIII increased hydrogen peroxide and lipid hydroperoxide in plasma and ovary; decreased the antioxidant enzymes (AOXs) GPx1, GR, SOD, and catalase; and increased glutathione S-transferase in plasma and ovary. To understand the effects of CrVI on ROS and AOXs in granulosa (GC) and theca (TC) cell compartments in the ovary, ROS levels and mRNA expression of cytosolic and mitochondrial AOXs, such as SOD1, SOD2, catalase, GLRX1, GSTM1, GSTM2, GSTA4, GR, TXN1, TXN2, TXNRD2, and PRDX3, were studied in GCs and TCs and in a spontaneously immortalized granulosa cell line (SIGC). Overall, CrVI downregulated each of the AOXs; and vitamin C mitigated the effects of CrVI on these enzymes in GCs and SIGCs, but failed to mitigate CrVI effects on GSTM1, GSTM2, TXN1, and TXN2 in TCs. Thus, these data for the first time reveal that lactational exposure to CrIII accelerated follicular atresia and decreased steroidogenesis in F1

  8. Development of high-emittance scales on thoriated nickel-chromium-aluminum-base alloys. [produced by high temperature oxidation

    NASA Technical Reports Server (NTRS)

    Seltzer, M. S.; Wright, I. G.; Wilcox, B. A.

    1973-01-01

    The surface regions of a DSNiCrAl alloy have been doped, by a pack diffusion process, with small amounts of Mn, Fe, or Co, and the effect of these dopants on the total normal emissivity of the scales produced by subsequent high temperature oxidation has been measured. While all three elements lead to a modest increase in emissivity, (up to 23% greater than the undoped alloy) only the change caused by manganese is thermally stable. However, this increased emissivity is within 85 percent of that of TDNiCr oxidized to form a chromia scale. The maganese-doped alloy is some 50 percent weaker than undoped DSNiCrAl after the doping treatment, and approximately 30 percent weaker after oxidation.

  9. Cholesterol biosensor based on rf sputtered zinc oxide nanoporous thin film

    SciTech Connect

    Singh, S. P.; Arya, Sunil K.; Pandey, Pratibha; Malhotra, B. D.; Saha, Shibu; Sreenivas, K.; Gupta, Vinay

    2007-08-06

    Cholesterol oxidase (ChOx) has been immobilized onto zinc oxide (ZnO) nanoporous thin films grown on gold surface. A preferred c-axis oriented ZnO thin film with porous surface morphology has been fabricated by rf sputtering under high pressure. Optical studies and cyclic voltammetric measurements show that the ChOx/ZnO/Au bioelectrode is sensitive to the detection of cholesterol in 25-400 mg/dl range. A relatively low value of enzyme's kinetic parameter (Michaelis-Menten constant) {approx}2.1 mM indicates enhanced enzyme affinity of ChOx to cholesterol. The observed results show promising application of nanoporous ZnO thin film for biosensing application without any functionalization.

  10. Microstructure, optical property, and electronic band structure of cuprous oxide thin films

    SciTech Connect

    Park, Jun-Woo; Jang, Hyungkeun; Kim, Sung; Choi, Suk-Ho; Lee, Hosun; Kang, Joongoo; Wei, Su-Huai

    2011-11-15

    Cuprous oxide (Cu{sub 2}O) thin films were grown via radio frequency sputtering deposition at various temperatures. The dielectric functions and luminescence properties of the Cu{sub 2}O thin films were measured using spectroscopic ellipsometry and photoluminescence, respectively. High-energy peaks were observed in the photoluminescence spectra. Several critical points (CPs) were found using second derivative spectra of the dielectric functions and the standard critical point model. The electronic band structure and the dielectric functions were calculated using density functional theory, and the CP energies were estimated to compare with the experimental data. We identified the high-energy photoluminescence peaks to quasi-direct transitions which arose from the granular structures of the Cu{sub 2}O thin films.

  11. Post-annealing-free, room temperature processed nanocrystalline indium tin oxide thin films for plastic electronics

    NASA Astrophysics Data System (ADS)

    Nyoung Jang, Jin; Jong Lee, You; Jang, YunSung; Yun, JangWon; Yi, Seungjun; Hong, MunPyo

    2016-06-01

    In this study, we confirm that bombardment by high energy negative oxygen ions (NOIs) is the key origin of electro-optical property degradations in indium tin oxide (ITO) thin films formed by conventional plasma sputtering processes. To minimize the bombardment effect of NOIs, which are generated on the surface of the ITO targets and accelerated by the cathode sheath potential on the magnetron sputter gun (MSG), we introduce a magnetic field shielded sputtering (MFSS) system composed of a permanent magnetic array between the MSG and the substrate holder to block the arrival of energetic NOIs. The MFSS processed ITO thin films reveal a novel nanocrystal imbedded polymorphous structure, and present not only superior electro-optical characteristics but also higher gas diffusion barrier properties. To the best of our knowledge, no gas diffusion barrier composed of a single inorganic thin film formed by conventional plasma sputtering processes achieves such a low moisture permeability.

  12. Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

    SciTech Connect

    Ong, Hui-Yng; Shrestha, Milan; Lau, Gih-Keong

    2015-09-28

    Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window.

  13. Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

    NASA Astrophysics Data System (ADS)

    Ong, Hui-Yng; Shrestha, Milan; Lau, Gih-Keong

    2015-09-01

    Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window.

  14. Hybrid composite thin films composed of tin oxide nanoparticles and cellulose

    NASA Astrophysics Data System (ADS)

    Mahadeva, Suresha K.; Nayak, Jyoti; Kim, Jaehwan

    2013-07-01

    This paper reports the preparation and characterization of hybrid thin films consisting of tin oxide (SnO2) nanoparticles and cellulose. SnO2 nanoparticle loaded cellulose hybrid thin films were fabricated by a solution blending technique, using sodium dodecyl sulfate as a dispersion agent. Scanning and transmission electron microscopy studies revealed uniform dispersion of the SnO2 nanoparticles in the cellulose matrix. Reduction in the crystalline melting transition temperature and tensile properties of cellulose was observed due to the SnO2 nanoparticle loading. Potential application of these hybrid thin films as low cost, flexible and biodegradable humidity sensors is examined in terms of the change in electrical resistivity of the material exposed to a wide range of humidity as well as its response-recovery behavior.

  15. Formation of thin walled ceramic solid oxide fuel cells

    DOEpatents

    Claar, Terry D.; Busch, Donald E.; Picciolo, John J.

    1989-01-01

    To reduce thermal stress and improve bonding in a high temperature monolithic solid oxide fuel cell (SOFC), intermediate layers are provided between the SOFC's electrodes and electrolyte which are of different compositions. The intermediate layers are comprised of a blend of some of the materials used in the electrode and electrolyte compositions. Particle size is controlled to reduce problems involving differential shrinkage rates of the various layers when the entire structure is fired at a single temperature, while pore formers are provided in the electrolyte layers to be removed during firing for the formation of desired pores in the electrode layers. Each layer includes a binder in the form of a thermosetting acrylic which during initial processing is cured to provide a self-supporting structure with the ceramic components in the green state. A self-supporting corrugated structure is thus formed prior to firing, which the organic components of the binder and plasticizer removed during firing to provide a high strength, high temperature resistant ceramic structure of low weight and density.

  16. Sputter deposition and characterization of lithium cobalt oxide thin films and their applications in thin-film rechargeable lithium batteries

    SciTech Connect

    Wang, B.; Bates, J.B.; Luck, C.F.; Sales, B.C.; Zuhr, R.A.; Robertson, J.D.

    1996-01-01

    Li Co oxide thin films were deposited by rf magnetron sputtering of a LiCoO{sub 2} target in a 3:1 Ar/O{sub 2} mixture gas. From proton-induced gamma-ray emission analysis and Rutherford backscattering spectrometry, the average composition of these films was determined to be Li{sub 1.15}CoO{sub 2.16}. X-ray powder diffraction patterns of films annealed in air at 500-700 C were consistent with regular rhombohedral structure of crystalline LiCoO{sub 2}. Discharge curves of thin film lithium cells with amoprohous LiCoO{sub 2} showed no obvious structural transition between 4.2 and 1.5 V. Shape of discharge curves of cells with polycrystalline cathodes were consistent with a two-phase voltage plateau at {similar_to}3.9 V with a relatively large capacity and two additional smaller plateaus at higher voltages. Cells with the 700 C annealed cathodes showed a capacity loss of {similar_to} after 1000 cycles between 4.2 and 3.0 V.

  17. A novel thin film solid oxide fuel cell for microscale energy conversion

    SciTech Connect

    Jankowiski, A; Morse, J

    1999-07-21

    A novel approach for the fabrication and assembly of a solid oxide fuel cell system is described which enables effective scaling of the fuel delivery, manifold, and fuel cell stack components for applications in miniature and microscale energy conversion. Electrode materials for solid oxide fuel cells are developed using sputter deposition techniques. A thin film anode is formed by co-deposition of nickel and yttria-stabilized zirconia (YSZ). This approach provides a mixed conducting inter-facial layer between the nickel electrode and electrolyte layer. Similarly, a thin film cathode is formed by co-deposition of silver and yttria-stabilized zirconia. Additionally, sputter deposition of yttria-stabilized zirconia thin film electrolyte enables high quality, continuous films to be formed having thicknesses on the order of 1-2 {micro}m. This will effectively lower the temperature of operation for the fuel cell stack significantly below the traditional ranges at which solid oxide electrolyte systems are operated (600-1000 C), thereby rendering this fuel cell system suitable for miniaturization, Scaling towards miniaturization is accomplished by utilizing novel micromachining approaches which allow manifold channels and fuel delivery system to be formed within the substrate which the thin film fuel cell stack is fabricated on, thereby circumventing the need for bulky manifold components which are not directly scalable. Methods to synthesize anodes for thin film solid-oxide fuel cells (TFSOFCs) from the electrolyte and a conductive material are developed using photolithographic patterning and physical vapor deposition. The anode layer must enable combination of the reactive gases, be conductive to pass the electric current, and provide mechanical support to the electrolyte and cathode layers. The microstructure and morphology desired for the anode layer should facilitate generation of maximum current density from the fuel cell. For these purposes, the parameters of the

  18. High quality thin films of thermoelectric misfit cobalt oxides prepared by a chemical solution method

    NASA Astrophysics Data System (ADS)

    Rivas-Murias, Beatriz; Manuel Vila-Fungueiriño, José; Rivadulla, Francisco

    2015-07-01

    Misfit cobaltates ([Bi/Ba/Sr/Ca/CoO]nRS[CoO2]q) constitute the most promising family of thermoelectric oxides for high temperature energy harvesting. However, their complex structure and chemical composition makes extremely challenging their deposition by high-vacuum physical techniques. Therefore, many of them have not been prepared as thin films until now. Here we report the synthesis of high-quality epitaxial thin films of the most representative members of this family of compounds by a water-based chemical solution deposition method. The films show an exceptional crystalline quality, with an electrical conductivity and thermopower comparable to single crystals. These properties are linked to the epitaxial matching of the rock-salt layers of the structure to the substrate, producing clean interfaces free of amorphous phases. This is an important step forward for the integration of these materials with complementary n-type thermoelectric oxides in multilayer nanostructures.

  19. Carbon-Incorporated Amorphous Indium Zinc Oxide Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Parthiban, S.; Park, K.; Kim, H.-J.; Yang, S.; Kwon, J.-Y.

    2014-11-01

    We propose the use of amorphous-carbon indium zinc oxide (a-CIZO) as a channel material for thin-film transistor (TFT) fabrication. This study chose a carbon dopant as a carrier suppressor and strong oxygen binder in amorphous-indium zinc oxide (a-IZO) channel material. a-CIZO thin films were deposited using radiofrequency (RF) sputtering and postannealed at 150°C. X-ray diffraction and transmission electron microscopy analysis revealed that the film remained amorphous even after postannealing. The a-CIZO TFT postannealed at 150°C exhibited saturation field-effect mobility of 16.5 cm2 V-1 s-1 and on-off current ratio of ˜4.3 × 107.

  20. Silver Nanoparticle-Embedded Thin Silica-Coated Graphene Oxide as an SERS Substrate

    PubMed Central

    Pham, Xuan-Hung; Hahm, Eunil; Kim, Hyung-Mo; Shim, Seongbo; Kim, Tae Han; Jeong, Dae Hong; Lee, Yoon-Sik; Jun, Bong-Hyun

    2016-01-01

    A hybrid of Ag nanoparticle (NP)-embedded thin silica-coated graphene oxide (GO@SiO2@Ag NPs) was prepared as a surface-enhanced Raman scattering (SERS) substrate. A 6 nm layer of silica was successfully coated on the surface of GO by the physical adsorption of sodium silicate, followed by the hydrolysis of 3-mercaptopropyl trimethoxysilane. Ag NPs were introduced onto the thin silica-coated graphene oxide by the reduction of Ag+ to prepare GO@SiO2@Ag NPs. The GO@SiO2@Ag NPs exhibited a 1.8-fold enhanced Raman signal compared to GO without a silica coating. The GO@SiO2@Ag NPs showed a detection limit of 4-mercaptobenzoic acid (4-MBA) at 0.74 μM. PMID:28335304

  1. High quality thin films of thermoelectric misfit cobalt oxides prepared by a chemical solution method

    PubMed Central

    Rivas-Murias, Beatriz; Manuel Vila-Fungueiriño, José; Rivadulla, Francisco

    2015-01-01

    Misfit cobaltates ([Bi/Ba/Sr/Ca/CoO]nRS[CoO2]q) constitute the most promising family of thermoelectric oxides for high temperature energy harvesting. However, their complex structure and chemical composition makes extremely challenging their deposition by high-vacuum physical techniques. Therefore, many of them have not been prepared as thin films until now. Here we report the synthesis of high-quality epitaxial thin films of the most representative members of this family of compounds by a water-based chemical solution deposition method. The films show an exceptional crystalline quality, with an electrical conductivity and thermopower comparable to single crystals. These properties are linked to the epitaxial matching of the rock-salt layers of the structure to the substrate, producing clean interfaces free of amorphous phases. This is an important step forward for the integration of these materials with complementary n-type thermoelectric oxides in multilayer nanostructures. PMID:26153533

  2. Growth of textured thin Au coatings on iron oxide nanoparticles with near infrared absorbance

    PubMed Central

    Ma, L L; Borwankar, A U; Willsey, B W; Yoon, K Y; Tam, J O; Sokolov, K V; Feldman, M D; Milner, T E; Johnston, K P

    2013-01-01

    A homologous series of Au-coated iron oxide nanoparticles, with hydrodynamic diameters smaller than 60 nm was synthesized with very low Auto-iron mass ratios as low as 0.15. The hydrodynamic diameter was determined by dynamic light scattering and the composition by atomic absorption spectroscopy and energy dispersive x-ray spectroscopy (EDS). Unusually low Au precursor supersaturation levels were utilized to nucleate and grow Au coatings on iron oxide relative to formation of pure Au nanoparticles. This approach produced unusually thin coatings, by lowering autocatalytic growth of Au on Au, as shown by transmission electron microscopy (TEM). Nearly all of the nanoparticles were attracted by a magnet indicating a minimal amount of pure Au particles The coatings were sufficiently thin to shift the surface plasmon resonance (SPR) to the near infrared (NIR), with large extinction coefficients., despite the small particle hydrodynamic diameters, observed from dynamic light scattering to be less than 60 nm. PMID:23238021

  3. Graphene oxide thin films: influence of chemical structure and deposition methodology.

    PubMed

    Hidalgo, R S; López-Díaz, D; Velázquez, M Mercedes

    2015-03-10

    We synthesized graphene oxide sheets of different functionalization by oxidation of two different starting materials, graphite and GANF nanofibers, followed by purification based on alkaline washing. The chemical structure of graphene oxide materials was determined by X-ray photoelectron spectroscopy (XPS), and the nanoplatelets were characterized by ζ potential and dynamic light scattering (DLS) measurements. The XPS results indicated that the chemical structure depends on the starting material. Two different deposition methodologies, Langmuir-Blodgett (LB) and Langmuir-Schaefer (LS), were employed to build the graphene oxide thin films. The film morphology was analyzed by scanning electron microscopy (SEM). The SEM images allow us to conclude that the LB methodology provides the highest coverage. This coverage is almost independent of the chemical composition of sheets. Conversely, the coverage obtained by the LS methodology increases with the percentage of C-O groups attached to sheets. Surface-pressure isotherms of these materials were interpreted according to the Volmer model.

  4. Thin coatings for protecting titanium aluminides in high-temperature oxidizing environments

    NASA Technical Reports Server (NTRS)

    Wiedemann, K. E.; Taylor, P. J.; Clark, R. K.; Wallace, T. A.

    1991-01-01

    Titanium aluminides have high specific strengths at high temperatures but are susceptible to environmental attack. Their use in many aerospace applications would require that they be protected with coatings that, for structural efficiency, must be thin. It is conceivable that acceptable coatings might be found in several oxide systems, and consequently, oxide coatings of many compositions were prepared from sol-gels for study. Response-surface methodology was used to refine coating compositions and factorial experiments were used to develop coating strategies. Oxygen permeability diagrams of two-layer coatings for several oxide systems, an analysis of multiple-layer coatings on rough and polished surfaces, and modeling of the oxidation weight gain are presented.

  5. Formation of thin tungsten oxide layers: characterization and exposure to deuterium

    NASA Astrophysics Data System (ADS)

    Addab, Y.; Martin, C.; Pardanaud, C.; Khayadjian, J.; Achkasov, K.; Kogut, D.; Cartry, G.; Giacometti, G.; Cabié, M.; Gardarein, J. L.; Roubin, P.

    2016-02-01

    Thin tungsten oxide layers with thicknesses up to 250 nm have been formed on W surfaces by thermal oxidation following a parabolic growth rate. The reflectance of the layers in the IR range 2.5-16 μm has been measured showing a decrease with the layer thickness especially at low wavelengths. Raman microscopy and x-ray diffraction show a nanocrystalline WO3 monoclinic structure. Low energy deuterium plasma exposure (11 eV/D+) has been performed inducing a phase transition, a change in the sample colour and the formation of tungsten bronze (D x WO3). Implantation modifies the whole layer suggesting a deep diffusion of deuterium inside the oxide. After exposure, a deuterium release due to the oxidation of D x WO3 under ambient conditions has been evidenced showing a reversible deuterium retention.

  6. Boron-doped cobalt oxide thin films and its electrochemical properties

    NASA Astrophysics Data System (ADS)

    Kerli, S.

    2016-09-01

    The cobalt oxide and boron-doped cobalt oxide thin films were produced by spray deposition method. All films were obtained onto glass and fluorine-doped tin oxide (FTO) substrates at 400∘C and annealed at 550∘C. We present detailed analysis of the morphological and optical properties of films. XRD results show that boron doping disrupts the structure of the films. Morphologies of the films were investigated by using a scanning electron microscopy (SEM). Optical measurements indicate that the band gap energies of the films change with boron concentrations. The electrochemical supercapacitor performance test has been studied in aqueous 6 M KOH electrolyte and with scan rate of 5 mV/s. Measurements show that the largest capacitance is obtained for 3% boron-doped cobalt oxide film.

  7. Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors

    NASA Astrophysics Data System (ADS)

    Jiang, Guixia; Liu, Ao; Liu, Guoxia; Zhu, Chundan; Meng, You; Shin, Byoungchul; Fortunato, Elvira; Martins, Rodrigo; Shan, Fukai

    2016-10-01

    Solution-processed metal-oxide thin films with high dielectric constants (k) have been extensively studied for low-cost and high-performance thin-film transistors (TFTs). In this report, MgO dielectric films were fabricated using the spin-coating method. The MgO dielectric films annealed at various temperatures (300, 400, 500, and 600 °C) were characterized by using thermogravimetric analysis, optical spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and atomic-force microscopy. The electrical measurements indicate that the insulating properties of MgO thin films are improved with an increase in annealing temperature. In order to clarify the potential application of MgO thin films as gate dielectrics in TFTs, solution-derived In2O3 channel layers were separately fabricated on various MgO dielectric layers. The optimized In2O3/MgO TFT exhibited an electron mobility of 5.48 cm2/V s, an on/off current ratio of 107, and a subthreshold swing of 0.33 V/dec at a low operation voltage of 6 V. This work represents a great step toward the development of portable and low-power consumption electronics.

  8. High-K Lanthanum Zirconium Oxide Thin Film Dielectrics from Aqueous Solution Precursors.

    PubMed

    Woods, Keenan Navarre; Chiang, Tsung-Han; Plassmeyer, Paul N; Kast, Matthew G; Lygo, Alexander C; Grealish, Aidan K; Boettcher, Shannon W; Page, Catherine J

    2017-03-06

    Metal oxide thin films are critical in modern electronic applications. In particular, high-κ dielectrics are of interest for reducing power consumption in metal-insulator-semiconductor (MIS) field-effect transistors. Although thin-film materials are typically produced via vacuum-based methods, solution deposition offers a scalable and cost-efficient alternative. We report an all-inorganic aqueous solution route to amorphous lanthanum zirconium oxide (La2Zr2O7, "LZO") dielectric thin films. LZO films were spin-cast from aqueous solutions of metal nitrates and annealed at temperatures between 300 and 600 °C to produce dense, defect-free, and smooth films with sub-nm roughness. Dielectric constants of 12.2 to 16.4 and loss tangents < 0.6% were obtained for MIS devices utilizing LZO as the dielectric layer (1 kHz). Leakage currents < 10-7 A cm-2 at 4 MV cm-1 were measured for samples annealed at 600 °C. The excellent surface morphology, high dielectric constants, and low leakage current densities makes these LZO dielectrics promising candidates for thin-film transistor devices.

  9. Gas Barrier and Separation Behavior of Graphene Oxide Nanobrick Wall Thin Films

    NASA Astrophysics Data System (ADS)

    Grunlan, Jaime

    2015-03-01

    In many cases, electronics packaging requires electrical conductivity and barrier to oxygen, even under humid conditions. These two properties have simultaneously been realized through the use of surfactant-free aqueous layer-by-layer (LbL) processing, in the form of a polymer composite nanocoating. By layering graphene oxide (GO) with polyethyleneimine (PEI), a ``nano brick wall'' structure has been created, imparting gas barrier properties to the film. Reducing the graphene oxide with a thermal treatment further produces high oxygen barrier in humid conditions and imparts high electrical conductivity (σ ~ 1750 S/m). These thin films (<400 nm) are flexible relative traditional conductive thin films (e.g. ITO), and processing occurs under ambient conditions with water as the only solvent. Additionally, these PEI/GO thin films exhibit H2/CO2 selectivity (>300), making them interesting for gas purification membranes. The flexible nature of the aforementioned thin films, along with their excellent combination of transport properties, make them ideal candidates for use in a broad range of electronics and other packaging applications.

  10. Characterization of Zinc Oxide and Pentacene Thin Film Transistors for CMOS Inverters

    NASA Astrophysics Data System (ADS)

    Iechi, Hiroyuki; Watanabe, Yasuyuki; Yamauchi, Hiroshi; Kudo, Kazuhiro

    We fabricated both thin film transistors (TFTs) and diodes using zinc oxide (ZnO) and pentacene, and investigated their basic characteristics. We found that field-effect mobility is influenced by the interface state between the semiconductor and dielectric layers. Furthermore, the complementary metal oxide semiconductor (CMOS) inverter using a p-channel pentacene field-effect transistor (FET) and an n-channel ZnO FET showed a relatively high voltage gain (8 - 12) by optimizing the device structure. The hybrid complementary inverters described here are expected for application in flexible displays, radio frequency identification cards (RFID) tags, and others.

  11. Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor.

    PubMed

    Nomura, Kenji; Ohta, Hiromichi; Ueda, Kazushige; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

    2003-05-23

    We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of approximately 106 and a field-effect mobility of approximately 80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.

  12. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

    NASA Astrophysics Data System (ADS)

    Nomura, Kenji; Ohta, Hiromichi; Ueda, Kazushige; Kamiya, Toshio; Hirano, Masahiro; Hosono, Hideo

    2003-05-01

    We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of ~106 and a field-effect mobility of ~80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.

  13. Oxide Thin-Film Transistors Fabricated Using Biodegradable Gate Dielectric Layer of Chicken Albumen

    NASA Astrophysics Data System (ADS)

    Jeon, Da-Bin; Bak, Jun-Yong; Yoon, Sung-Min

    2013-12-01

    An oxide thin-film transistor (TFT) using chicken albumen as gate dielectric on paper substrate was demonstrated. Chicken albumen, which was directly extracted from chicken egg white, was deposited as gate dielectric layer. An In-Ga-Zn-O was chosen as an active channel. The TFT feasibilities were successfully confirmed, in which channel mobility and subthreshold slope of the TFT were 6.48 cm2 V-1 s-1 and 1.28 V/s, respectively. This is the first report on the device configuration combining the biodegradable gate insulator and oxide semiconducting channel.

  14. Amorphous thin film ruthenium oxide as an electrode material for electrochemical capacitors

    SciTech Connect

    Jow, T.R.; Zheng, J.P.

    1995-12-31

    Ruthenium oxide thin films of an amorphous phase were successfully prepared on a titanium (Ti) substrate at temperatures below 160 C. The sol-gel process using metal alkoxide precursor in nonaqueous solvents was used to prepare these films. The preliminary results showed that a specific capacitance of 430 F/g can be achieved for amorphous ruthenium oxide electrode in sulfuric acid. Films prepared by this method are compared with the films prepared by the thermal decomposition of the aqueous ruthenium chloride solution at temperatures above 300 C. The specific capacitance, the crystalline structure, and the surface morphology of these films as a function of the preparation temperature were also discussed.

  15. Non-equilibrium origin of high electrical conductivity in gallium zinc oxide thin films

    SciTech Connect

    Zakutayev, Andriy Ginley, David S.; Lany, Stephan; Perry, Nicola H.; Mason, Thomas O.

    2013-12-02

    Non-equilibrium state defines physical properties of materials in many technologies, including architectural, metallic, and semiconducting amorphous glasses. In contrast, crystalline electronic and energy materials, such as transparent conductive oxides (TCO), are conventionally thought to be in equilibrium. Here, we demonstrate that high electrical conductivity of crystalline Ga-doped ZnO TCO thin films occurs by virtue of metastable state of their defects. These results imply that such defect metastability may be important in other functional oxides. This finding emphasizes the need to understand and control non-equilibrium states of materials, in particular, their metastable defects, for the design of novel functional materials.

  16. Different properties of aluminum doped zinc oxide nanostructured thin films prepared by radio frequency magnetron sputtering

    SciTech Connect

    Bidmeshkipour, Samina Shahtahmasebi, Nasser

    2013-06-15

    Aluminium doped zinc oxide (AZO) nanostructured thin films are prepared by radio frequency magnetron sputtering on glass substrate using specifically designed ZnO target containing different amount of Al{sub 2}O{sub 3} powder as the Al doping source. The optical properties of the aluminium doped zinc oxide films are investigated. The topography of the deposited films were investigated by Atomic Force Microscopy. Variation of the refractive index by annealing temperature are considered and it is seen that the refractive index increases by increasing the annealing temperature.

  17. Thin Oxides as a Cu Diffusion Barrier for NIF Be Ablator Capsules

    SciTech Connect

    Youngblood, Kelly P.; Huang, H.; Xu, H. W.; Hayes, J.; Moreno, K. A.; Wu, J. J.; Nikroo, A.; Alford, C. A.; Hamza, A. V.; Kucheyev, S. O.; Wang, Y. M.; Wu, K. J.

    2013-03-01

    The NIF point design uses a five-layer capsule to modify the X-ray absorption in order to achieve optimized shock timing. A stepped copper dopant design defines the layer structure. The production of the capsule involves pyrolysis to remove the inner plastic mandrel. Copper atoms diffuse radially and azimuthally throughout the capsule during pyrolysis. This diffusion significantly diminishes the capsule performance during implosion. Thermal and coated oxide barrier layers employed between layers mitigate the diffusion of copper during the mandrel removal process. The copper atoms do not diffuse through this barrier during pyrolysis. A capsule fabrication method that produces a capsule with a thin oxide layer will be discussed.

  18. Difference in charge transport properties of Ni-Nb thin films with native and artificial oxide

    SciTech Connect

    Trifonov, A. S.; Lubenchenko, A. V.; Polkin, V. I.; Pavolotsky, A. B.; Ketov, S. V.; Louzguine-Luzgin, D. V.

    2015-03-28

    Here, we report on the properties of native and artificial oxide amorphous thin film on a surface of an amorphous Ni-Nb sample. Careful measurements of local current-voltage characteristics of the system Ni-Nb / NiNb oxide/Pt, were carried out in contact mode of an atomic force microscope. Native oxide showed n-type conductivity, while in the artificial one exhibited p-type one. The shape of current-voltage characteristic curves is unique in both cases and no analogical behavior is found in the literature. X-ray photoelectron spectroscopy (XPS) measurements were used to detect chemical composition of the oxide films and the oxidation state of the alloy components. Detailed analysis of the XPS data revealed that the structure of natural Ni-Nb oxide film consists of Ni-NbO{sub x} top layer and nickel enriched bottom layer which provides n-type conductivity. In contrast, in the artificial oxide film Nb is oxidized completely to Nb{sub 2}O{sub 5}, Ni atoms migrate into bulk Ni-Nb matrix. Electron depletion layer is formed at the Ni-Nb/Nb{sub 2}O{sub 5} interface providing p-type conductivity.

  19. Method Evaluation And Field Sample Measurements For The Rate Of Movement Of The Oxidation Front In Saltstone

    SciTech Connect

    Almond, P. M.; Kaplan, D. I.; Langton, C. A.; Stefanko, D. B.; Spencer, W. A.; Hatfield, A.; Arai, Y.

    2012-08-23

    The objective of this work was to develop and evaluate a series of methods and validate their capability to measure differences in oxidized versus reduced saltstone. Validated methods were then applied to samples cured under field conditions to simulate Performance Assessment (PA) needs for the Saltstone Disposal Facility (SDF). Four analytical approaches were evaluated using laboratory-cured saltstone samples. These methods were X-ray absorption spectroscopy (XAS), diffuse reflectance spectroscopy (DRS), chemical redox indicators, and thin-section leaching methods. XAS and thin-section leaching methods were validated as viable methods for studying oxidation movement in saltstone. Each method used samples that were spiked with chromium (Cr) as a tracer for oxidation of the saltstone. The two methods were subsequently applied to field-cured samples containing chromium to characterize the oxidation state of chromium as a function of distance from the exposed air/cementitious material surface.

  20. Preparation of metal oxide thin films using coating photolysis process with ArF excimer laser

    NASA Astrophysics Data System (ADS)

    Tsuchiya, Tetsuo; Watanabe, Akio; Imai, Yoji; Niino, Hiroyuki; Yabe, Akira; Yamaguchi, Iwao; Manabe, Takaaki; Kumagai, Toshiya; Mizuta, Susumu

    2000-11-01

    The preparation of metal oxide thin films have been developed using the metalorganic (MO) compounds coating photolysis process with ArF excimer laser irradiation at room temperature. The effect of the starting materials and irradiation method on the product films was investigated by FT-IR, UV, XRD and SEM. It was found that metal acetylacetonates or metal 2-ethylhexanoate was effective as the starting materials. When using metal acetylacetonates as the starting materials, crystallized TiO2, In2O3 and ZrO2 were obtained with ArF laser irradiation at 50 mJ/cm2 at a repetition rate of 5 Hz for 5 min. When using An-acac, Fe, Sn, or In 2-ethylhexanoate as the starting material, a two-step process consisting of both preliminary weak (10mJ/cm2) and sufficiently strong irradiation (50mJ/cm2) was found to be effective for obtaining crystallized ZnO, Fe2O3, SnO2 and In2O3 films. In addition, crystallized complex oxide thin films such as ITO, PbTo3 and PbZrO3 were successfully obtained from the metal acetylacetonates or metal 2-ethylhexanoate using MO coating photolysis process. Patterned metal oxide thin films were also obtained by the ArF laser irradiation through the photomask, followed by leaching with solvents. The crystallization mechanism was discussed from the point of view of the photochemical reaction and photothermal reaction.

  1. Control of photophysical and photochemistry of colloidal quantum dots via metal and metal-oxide coated substrates

    NASA Astrophysics Data System (ADS)

    Sadeghi, S. M.; Nejat, A.

    2013-03-01

    We studied how deposition of a very thin layer of gold or chromium oxide on glass substrates can modify the way irradiation changes the fluorescence of CdSe/ZnS quantum dots. We found that the gold layer tends to shield the quantum dots from the substrate, preventing photoinduced fluorescence enhancement caused by the Coulomb blockage. In this case the emission of the quantum dots did not show also any broadening but rather a slight red shift, independent of the irradiation time. In the case of the chromium-oxide coated substrates we observed significant broadening and blue shift, indicating such oxide could enhance photo-oxidation of colloidal quantum dots significantly.

  2. Silver nanoparticles on Zinc Oxide thin film: An insight in fabrication and characterization

    NASA Astrophysics Data System (ADS)

    Hossain, M. K.; Drmosh, Q. A.; Yamani, Z. H.; Tabet, N.

    2014-08-01

    In this work, a simple two-steps process has been explained to fabricate silver (Ag) nanoparticles on Zinc Oxide (ZnO) thin film followed by their characterizations. The underneath layer ZnO thin film, as an example, was also investigated how the properties change during the course of nanoparticles fabrication. ZnO thin film was sputtered on standard glass substrate followed by further sputtering of an ultrathin Ag layer. Subsequently the specimen was treated at high temperature in inert environment. A periodic observation at specific temperature intervals confirmed the formation of Ag nanoparticles on ZnO thin film. Field-emission scanning electron microscopic (FESEM) observations revealed the size distribution of as-fabricated Ag nanoparticles in the range of 50-250 nm. Elemental analysis was also confirmed by SEM-aided energy dispersion spectroscopy. The underneath layer ZnO thin film was found to go through recrystallization, stress relaxation, and grain growth during the annealing process. Further treatment to ZnO only film showed a variation in surface topology with reference to those with Ag nanoparticles on ZnO. Such a system was also analysed with finite different time domain (FDTD) analysis. A typical model was considered and FDTD simulation was carried out to understand the trend of absorption depth profile within the absorbing layer involved in plasmonics solar cell.

  3. Synthesis and Characterization of Potentiostatically Electrodeposited Tungsten Oxide Thin Films for Smart Window Application

    NASA Astrophysics Data System (ADS)

    More, A. J.; Patil, R. S.; Dalavi, D. S.; Suryawanshi, M. P.; Burungale, V. V.; Kim, J. H.; Patil, P. S.

    2017-02-01

    Tungsten oxide (WO3) thin films have been synthesized using electrodeposition in potentiostatic mode and the effect of different deposition potentials on their structural, morphological, optical, and electrochromic (EC) properties investigated. The deposition potential versus saturated calomel electrode (SCE) was varied from -0.35 V to -0.50 V in steps of -0.05 V for 20 min each. The electrodeposited WO3 thin films were characterized using x-ray diffraction analysis, micro-Raman spectroscopy, field-emission scanning electron microscopy, and ultraviolet-visible (UV-Vis) spectrophotometry, revealing amorphous nature with nanograins having average size from 40 nm to 60 nm. The EC performance of the WO3 thin films exhibited response times of 1.35 s for bleaching ( t b) and 3.1 s for coloration ( t c) with excellent reversibility of 64.36%. The highest coloration efficiency of the electrodeposited WO3 thin films was found to be 87.95 cm2/C. The electrochemical reversibility and stability of the WO3 thin films obtained in this study make them promising for use in smart window applications.

  4. Structural and optical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films

    SciTech Connect

    Kumar, B. Rajesh; Rao, T. Subba

    2014-10-15

    Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates using DC reactive magnetron sputtering method. The thin films were deposited at 200 °C and post-deposition annealing from 15 to 90 min. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Scanning electron microscopy (SEM) is used to study the surface morphology of the films. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 - 26 nm. The minimum resistivity of 1.74 × 10{sup −4} Ω cm and an average transmittance of 92% are obtained for the thin film post annealed for 30 min. The optical band gap of ZAO thin films increased from 3.49 to 3.60 eV with the increase of annealing time due to Burstein-Moss effect. The optical constants refractive index (n) and extinction coefficient (k) were also determined from the optical transmission spectra.

  5. Thermodynamic modeling and experimental analysis of oxidation/sulfidation of nickel-chromium-aluminum model alloy coatings

    NASA Astrophysics Data System (ADS)

    Mueller, Erik M.

    With the current focus on finding future energy sources, land-based power gas turbines offer a desirable alternative to common coal-fired steam power generation. Ni-Cr-Al-X alloys are the material basis for producing overlay bond coats for the turbine blades used in sections of the turbine engine experiencing the most extreme environments. These overlay coatings are designed to provide environmental protection for the blades and vanes. While the oxidation of such alloys has been investigated and modeled in-depth, the concurrent sulfidation attack has not. This corrosion mode is now being heavily researched with the desire to use gasified coal, biomass, and other renewable fuel sources in gas turbines that often contain significant amounts of sulfur. The purpose of this dissertation was to use thermodynamic calculations to describe and predict the oxidation/sulfidation processes of two Ni-Cr-Al model alloys regarding phase evolution, composition, and component activities. These calculations, in the form of potential and phase fraction diagrams, combined with sulfidation experiments using kinetic measurements and materials characterization techniques, were able to describe and predict the simultaneous oxidation and sulfidation that occurred in these alloys.

  6. An (ultra) high-vacuum compatible sputter source for oxide thin film growth

    SciTech Connect

    Mayr, Lukas; Köpfle, Norbert; Auer, Andrea; Klötzer, Bernhard; Penner, Simon

    2013-09-15

    A miniaturised CF-38 mountable sputter source for oxide and metal thin film preparation with enhanced high-vacuum and ultra-high-vacuum compatibility is described. The all home-built sputtering deposition device allows a high flexibility also in oxidic sputter materials, suitable deposition rates for preparation of films in the nm- and the sub-monolayer regime and excellent reliability and enhanced cleanliness for usage in UHV chambers. For a number of technologically important – yet hardly volatile – materials, the described source represents a significant improvement over thermal deposition techniques like electron-beam- or thermal evaporation, as especially the latter are no adequate tool to prepare atomically clean layers of refractory oxide materials. Furthermore, it is superior to commercially available magnetron sputter devices, especially for applications, where highly reproducible sub-monolayer thin film preparation under very clean UHV conditions is required (e.g., for studying phase boundary effects in catalysis). The device in turn offers the usage of a wide selection of evaporation materials and special target preparation procedures also allow the usage of pressed oxide powder targets. To prove the performance of the sputter-source, test preparations with technologically relevant oxide components, comprising ZrO{sub 2} and yttrium-stabilized ZrO{sub 2}, have been carried out. A wide range of characterization methods (electron microscopy, X-ray photoelectron spectroscopy, low-energy ion scattering, atomic force microscopy, and catalytic testing) were applied to demonstrate the properties of the sputter-deposited thin film systems.

  7. Structure and Properties of Chromium- and Zinc-Oxide Layers Formed on Zircaloy-2 in High-Temperature Water

    SciTech Connect

    Blajiev, Orlin L.; Matsuura, Chihiro; Hiroishi, Daisuke; Ishigure, Kenkichi

    2002-01-15

    The corrosion behavior of Zircaloy-2 in the presence of Zn was investigated. Zinc is a possible technological additive to be injected in the coolant to reduce the {sup 60}Co buildup. However, its influence on the cladding corrosion, alone or in combination with some typical corrosion impurities, as, for example, Cr, has not been considered so far. Because of this, the surface composition and electrochemical properties of Zircaloy specimens were investigated after their exposure to Zn{sup 2+}, CrO{sub 4}{sup 2-}, and CrO{sub 4}{sup 2-} + Zn{sup 2+} aqueous solutions at 250degC. It was found that zinc-containing phases did not deposit from solutions containing on Zn{sup 2+} ions. Amorphous Cr{sup 3+}-oxide and ZnCr{sub 2}O{sub 4} ferrite phases were found on the surface of the samples after their exposure to CrO{sub 4}{sup 2-} and CrO{sub 4}{sup 2-} + Zn{sup 2+} environments, respectively. The amounts of the deposited Cr and Zn + Cr strongly depended on the times of the preconditioning of the Zircaloy specimens in high-temperature water. The rate of the oxide precipitation declined with increasing exposure time to both the CrO{sub 4}{sup 2-} and CrO{sub 4}{sup 2-} + Zn{sup 2+} solutions. The electrochemical measurement showed that the limiting factor of the Cr and Zn + Cr deposition reaction was the reduction of Cr(VI) to Cr(III). The reduction completely depended on the resistance of ZrO{sub 2}, Cr, and Zn + Cr oxides, which increased with the time of preconditioning and exposure. A thermodynamic analysis based on oxide solubilities was applied to explain the different deposition pathways in the CrO{sub 4}{sup 2-} and CrO{sub 4}{sup 2-} + Zn{sup 2+} environments. In view of the decreasing deposition rate of the Zn - Cr-oxide phases, it could be concluded that their limited precipitation and presence do not have a significant adverse effect on the fuel cladding corrosion.

  8. Chromium adsorption by lignin

    SciTech Connect

    Lalvani, S.B.; Huebner, A.; Wiltowski, T.S.

    2000-01-01

    Hexavalent chromium is a known carcinogen, and its maximum contamination level in drinking water is determined by the US Environmental Protection Agency (EPA). Chromium in the wastewaters from plating and metal finishing, tanning, and photographic industries poses environmental problems. A commercially available lignin was used for the removal of hexavalent as well as trivalent chromium from aqueous solution. It is known that hexavalent chromium is present as an anionic species in the solution. It was found that lignin can remove up to 63% hexavalent and 100% trivalent chromium from aqueous solutions. The removal of chromium ions was also investigated using a commercially available activated carbon. This absorbent facilitated very little hexavalent and almost complete trivalent chromium removal. Adsorption isotherms and kinetics data on the metal removal by lignin and activated carbon are presented and discussed.

  9. Scanning tunneling microscopy/spectroscopy on perovskite oxide thin films deposited in situ.

    PubMed

    Hitosugi, Taro; Shimizu, Ryota; Ohsawa, Takeo; Iwaya, Katsuya

    2014-10-01

    Complex oxide surfaces and interfaces, consisting of two or more cations and oxygen anions, have attracted a great deal of attention because their properties are crucial factors in the performance of catalysts, fuel cells, and Li-ion batteries. However, atomic-scale investigations of these oxide surfaces have been hindered because of the difficulties in surface preparation. Here, we demonstrate atomic-scale surface studies of complex perovskite oxides and the initial growth processes in oxide epitaxial films deposited on (✓13 × ✓13)-R33.7° reconstructed SrTiO3 (001) substrates using a scanning tunneling microscope integrated with a pulsed laser deposition system. The atomically ordered, reconstructed SrTiO3 (001) surface is stable under the typical conditions necessary for the growth of oxide thin films, and hence is considered suitable for the study of the initial growth processes in oxide films. The atomic-scale microscopic/spectroscopic characterizations performed here shed light on the microscopic origin of electronic properties observed in complex oxides and their heterostructures.

  10. One-step synthesis of nanocrystalline transition metal oxides on thin sheets of disordered graphitic carbon by oxidation of MXenes.

    PubMed

    Naguib, Michael; Mashtalir, Olha; Lukatskaya, Maria R; Dyatkin, Boris; Zhang, Chuanfang; Presser, Volker; Gogotsi, Yury; Barsoum, Michel W

    2014-07-18

    Herein we show that heating 2D Ti3C2 in air results in TiO2 nanocrystals enmeshed in thin sheets of disordered graphitic carbon structures that can handle extremely high cycling rates when tested as anodes in lithium ion batteries. Oxidation of 2D Ti3C2 in either CO2 or pressurized water also resulted in TiO2-C hybrid structures. Similarly, other hybrids can be produced, as we show here for Nb2O5/C from 2D Nb2C.

  11. Sulfur-vanadium oxide gel composites as thin film cathodes for rechargeable lithium batteries

    SciTech Connect

    Mukherjee, S.P.; Gavrilov, A.B.; Skotheim, T.A.

    1998-07-01

    A class of novel electroactive cathode materials based on composites produced from elemental sulfur and vanadium oxide xerogels or aerogels has been developed as models for lithium battery applications. The use of elemental sulfur in rechargeable lithium batteries has been hindered due to certain limitations such as, very low electronic conductivity and the out-diffusion of polysulfides during the cycling process which reduces the cycling efficiency. Vanadium oxide xerogels and aerogels have certain desirable characteristic physico-chemical properties, such as, high surface areas with nono-scale interconnecting porosity, high electronic conductivity, non- or nanocrystallinity, and oxidation reduction catalytic activity. Since these properties may improve the performance of sulfur based rechargeable batteries, a family of composite cathodes containing elemental sulfur and vanadium oxide gels were produced. The performance of the composites cathodes, in thin film form, were evaluated in coin cells and AA cells with metallic lithium anodes and liquid electrolytes. The multifunctional role of vanadium oxide gels on the cell performance of the cells having composite cathodes has been qualitatively explored. Results indicate that the cathodes having xerogel composites based on vanadium oxide sol from vanadium oxide isopropoxide can be made with high sulfur content (80 wt %) and with low carbon content (5 wt %) and without any polymer binder. This shows the contribution of adhesive properties and electronic conductivity of vanadium oxide xerogels. A significant suppression of polysulfide out-diffusion is observed with appropriate processing of the composite cathodes. It is anticipated that the nanoscale interconnecting porosity of gels plays an important role in this behavior. An excellent rate capability is observed with the vanadium-oxide sulfur composite cathodes indicating the contribution of intrinsic electrochemical properties of the vanadium oxide.

  12. Development and Research on the Mechanism of Novel Mist Etching Method for Oxide Thin Films

    NASA Astrophysics Data System (ADS)

    Kawaharamura, Toshiyuki; Hirao, Takashi

    2012-03-01

    A novel etching process with etchant mist was developed and applied to oxide thin films such as zinc oxide (ZnO), zinc magnesium oxide (ZnMgO), and indium tin oxide (ITO). By using this process, it was shown that precise control of the etching characteristics is possible with a reasonable etching rate, for example, in the range of 10-100 nm/min, and a fine pattern of high accuracy can also be realized, even though this is usually very difficult by conventional wet etching processes, for ZnO and ZnMgO. The mist etching process was found to be similarly and successfully applied to ITO. The mechanism of mist etching has been studied by examining the etching temperature dependence of pattern accuracy, and it was shown that the mechanism was different from that of conventional liquid-phase spray etching. It was ascertained that fine pattern etching was attained using mist droplets completely (or partly) gasified by the heat applied to the substrate. This technique was applied to the fabrication of a ZnO thin-film transistor (TFT) with a ZnO active channel length of 4 µm. The electrical properties of the TFT were found to be excellent with fine uniformity over the entire 4-in. wafer.

  13. Electrochemical DNA biosensors based on thin gold films sputtered on capacitive nanoporous niobium oxide.

    PubMed

    Rho, Sangchul; Jahng, Deokjin; Lim, Jae Hoon; Choi, Jinsub; Chang, Jeong Ho; Lee, Sang Cheon; Kim, Kyung Ja

    2008-01-18

    Electrochemical DNA biosensors based on a thin gold film sputtered on anodic porous niobium oxide (Au@Nb(2)O(5)) are studied in detail here. We found that the novel DNA biosensor based on Au@Nb(2)O(5) is superior to those based on the bulk gold electrode or niobium oxide electrode. For example, the novel method does not require any time-consuming cleaning step in order to obtain reproducible results. The adhesion of gold films on the substrate is very stable during electrochemical biosensing, when the thin gold films are deposited on anodically prepared nanoporous niobium oxide. In particular, the novel biosensor shows enhanced biosensing performance with a 2.4 times higher resolution and a three times higher sensitivity. The signal enhancement is in part attributed to capacitive interface between gold films and nanoporous niobium oxide, where charges are accumulated during the anodic and cathodic scanning, and is in part ascribed to the structural stability of DNA immobilized at the sputtered gold films. The method allows for the detection of single-base mismatch DNA as well as for the discrimination of mismatch positions.

  14. Metastable tantalum oxide formation during the devitrification of amorphous tantalum thin films

    DOE PAGES

    Donaldson, Olivia K.; Hattar, Khalid; Trelewicz, Jason R.

    2016-07-04

    Microstructural evolution during the devitrification of amorphous tantalum thin films synthesized via pulsed laser deposition was investigated using in situ transmission electron microscopy (TEM) combined with ex situ isothermal annealing, bright-field imaging, and electron-diffraction analysis. The phases formed during crystallization and their stability were characterized as a function of the chamber pressure during deposition, devitrification temperature, and annealing time. A range of metastable nanocrystalline tantalum oxides were identified following devitrification including multiple orthorhombic oxide phases, which often were present with, or evolved to, the tetragonal TaO2 phase. While the appearance of these phases indicated the films were evolving to themore » stable form of tantalum oxide—monoclinic tantalum pentoxide—it was likely not achieved for the conditions considered due to an insufficient amount of oxygen present in the films following deposition. Nevertheless, the collective in situ and ex situ TEM analysis applied to thin film samples enabled the isolation of a number of metastable tantalum oxides. As a result, new insights were gained into the transformation sequence and stability of these nanocrystalline phases, which presents opportunities for the development of advanced tantalum oxide-based dielectric materials for novel memristor designs.« less

  15. Metastable tantalum oxide formation during the devitrification of amorphous tantalum thin films

    SciTech Connect

    Donaldson, Olivia K.; Hattar, Khalid; Trelewicz, Jason R.

    2016-07-04

    Microstructural evolution during the devitrification of amorphous tantalum thin films synthesized via pulsed laser deposition was investigated using in situ transmission electron microscopy (TEM) combined with ex situ isothermal annealing, bright-field imaging, and electron-diffraction analysis. The phases formed during crystallization and their stability were characterized as a function of the chamber pressure during deposition, devitrification temperature, and annealing time. A range of metastable nanocrystalline tantalum oxides were identified following devitrification including multiple orthorhombic oxide phases, which often were present with, or evolved to, the tetragonal TaO2 phase. While the appearance of these phases indicated the films were evolving to the stable form of tantalum oxide—monoclinic tantalum pentoxide—it was likely not achieved for the conditions considered due to an insufficient amount of oxygen present in the films following deposition. Nevertheless, the collective in situ and ex situ TEM analysis applied to thin film samples enabled the isolation of a number of metastable tantalum oxides. As a result, new insights were gained into the transformation sequence and stability of these nanocrystalline phases, which presents opportunities for the development of advanced tantalum oxide-based dielectric materials for novel memristor designs.

  16. Growth and surface characterization of sputter-deposited molybdenum oxide thin films

    SciTech Connect

    Ramana, Chintalapalle V.; Atuchin, Victor V.; Kesler, V. G.; Kochubey, V. A.; Pokrovsky, L. D.; Shutthanandan, V.; Becker, U.; Ewing, Rodney C.

    2007-04-15

    Molybdenum oxide thin films were produced by magnetron sputtering using a molybdenum (Mo) target. The sputtering was performed in a reactive atmosphere of argon-oxygen gas mixture under varying conditions of substrate temperature (Ts) and oxygen partial pressure (pO2). The effect of Ts and pO2 on the growth and microstructure of molybdenum oxide films was examined in detail using reflection high-energy electron diffraction (RHEED), Rutherford backscattering spectrometry (RBS), energy dispersive X-ray spectrometry (EDS), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) measurements. The analyses indicate that the effect of Ts and pO2 on the microstructure and phase of the grown molybdenum oxide thin films is remarkable. RHEED and RBS results indicate that the films grown at 445 *C under 62.3% O2 pressure were stoichiometric and polycrystalline MoO3. Films grown at lower pO2 were nonstoichiometric MoOx films with the presence of secondary phase. The microstructure of the grown Mo oxide films is discussed and conditions were optimized to produce phase pure, stoichiometric, and highly textured polycrystalline MoO3 films.

  17. Phosphorus Doping Effect in a Zinc Oxide Channel Layer to Improve the Performance of Oxide Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Han, Dong-Suk; Moon, Yeon-Keon; Lee, Sih; Kim, Kyung-Taek; Moon, Dae-Yong; Lee, Sang-Ho; Kim, Woong-Sun; Park, Jong-Wan

    2012-09-01

    In this study, we fabricated phosphorus-doped zinc oxide-based thin-film transistors (TFTs) using direct current (DC) magnetron sputtering at a relatively low temperature of 100°C. To improve the TFT device performance, including field-effect mobility and bias stress stability, phosphorus dopants were employed to suppress the generation of intrinsic defects in the ZnO-based semiconductor. The positive and negative bias stress stabilities were dramatically improved by introducing the phosphorus dopants, which could prevent turn-on voltage ( V ON) shift in the TFTs caused by charge trapping within the active channel layer. The study showed that phosphorus doping in ZnO was an effective method to control the electrical properties of the active channel layers and improve the bias stress stability of oxide-based TFTs.

  18. Chromium Oxidation State in Planetary Basalts: Oxygen Fugacity Indicator and Critical Variable for Cr-Spinel Stability

    NASA Technical Reports Server (NTRS)

    Bell, A. S.; Burger, P. V.; Le, Loan; Papike, J. J.; Jone, J.; Shearer, C. K.

    2014-01-01

    Cr is a ubiquitous and relatively abundant minor element in basaltic, planetary magmas. At the reduced oxidation states (oxidation state of Cr in in silicate melts. Here we present a series of 1-bar gas mixing experiments performed with a Fe-rich basaltic melt in which have determined the Cr redox ratio of the melt at over a range of fO2 values by measuring this quantity in olivine with X-ray Absorption Near Edge Spectroscopy (XANES). The measured Cr redox ratio of the olivine phenocrysts can be readily converted to the ratio present in the conjugate melt via the ratio of crystal-liquid partition coefficients for Cr3+ and Cr2+. We have applied these results to modeling Cr spinel stability and Cr redox ratios in a primitive, iron-rich martian basalt.

  19. Electrodeposition of cobalt-chromium alloy from trivalent chromium solutions

    SciTech Connect

    Dasarathy, H.; Riley, C.; Coble, H.D. . Dept. of Chemistry and Materials Science)

    1994-07-01

    Cobalt-chromium alloy was deposited from plating solutions containing cobalt(II) chloride and chromium(III) chloride at 3.5 pH. The deposits were obtained using both single and mixed complex solutions. Deposit morphology showed significant dependence on the complexing agent(s) used. Partitioning of the two components in the deposit as determined by energy dispersive spectroscopy depended on plating parameters such as concentration ratio of the two salts in the solution, complexing agent, type of current (both dc and pulsed current were studied), and current density. X-ray photoelectron spectroscopy spectra collected from as-deposited alloy revealed the presence of both oxides and metals. X-ray diffraction spectra for the alloy deposit indicated solid solution formation.

  20. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOEpatents

    Jankowski, Alan F.; Makowiecki, Daniel M.; Rambach, Glenn D.; Randich, Erik

    1999-01-01

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

  1. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOEpatents

    Jankowski, A.F.; Makowiecki, D.M.; Rambach, G.D.; Randich, E.

    1998-05-19

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated. 8 figs.

  2. Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

    DOEpatents

    Jankowski, Alan F.; Makowiecki, Daniel M.; Rambach, Glenn D.; Randich, Erik

    1998-01-01

    The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

  3. Thermal treatment of solution-processed nano-sized thin films of molybdenum oxide

    NASA Astrophysics Data System (ADS)

    Ganchev, M.; Sendova-Vassileva, M.; Popkirov, G.; Vitanov, P.

    2016-10-01

    A solution based deposition method to form nano-sized thin films of molybdenum oxide suitable for photovoltaic device applications is presented. The samples were deposited by spin-coating from molybdenum metal organic precursor solution on soda lime glass substrates. The influence of the process parameters such as spinning regime and concentration of the precursor solutions on the thickness and morphology of the films were investigated. The thermal decomposition of the molybdenum precursor and oxide formation were investigated by differential scanning calorimetry and characteristic patterns showed transitions up to 300oC followed by a zone of stability. Optical spectroscopy measurements in the wavelength range from 300 to 1800 nm presented an increase in transparency when temperature of annealing was raised up to 400oC. Raman scattering analysis revealed the presence of mixed molybdenum oxides. Measurements of the electrical conductivity were performed by the 4-point method.

  4. Characterization of zinc oxide thin film for pH detector

    NASA Astrophysics Data System (ADS)

    Hashim, Uda; Fathil, M. F. M.; Arshad, M. K. Md; Gopinath, Subash C. B.; Uda, M. N. A.

    2017-03-01

    This paper presents the fabrication process of the zinc oxide thin films for using to act as pH detection by using different PH solution. Sol-gel solution technique is used for preparing zinc oxide seed solution, followed by metal oxide deposition process by using spin coater on the silicon dioxide. Silicon dioxide layer is grown on the silicon wafer, then, ZnO seed solution is deposited on the silicon layer, baked, and annealing process carried on to undergo the characterization of its surface morphology, structural and crystalline phase. Electrical characterization is showed by using PH 4, 7, and 10 is dropped on the surface of the die, in addition, APTES solution is used as linker and also as a references of the electrical characterization.

  5. Effects of process parameters on sheet resistance uniformity of fluorine-doped tin oxide thin films.

    PubMed

    Hudaya, Chairul; Park, Ji Hun; Lee, Joong Kee

    2012-01-05

    An alternative indium-free material for transparent conducting oxides of fluorine-doped tin oxide [FTO] thin films deposited on polyethylene terephthalate [PET] was prepared by electron cyclotron resonance - metal organic chemical vapor deposition [ECR-MOCVD]. One of the essential issues regarding metal oxide film deposition is the sheet resistance uniformity of the film. Variations in process parameters, in this case, working and bubbler pressures of ECR-MOCVD, can lead to a change in resistance uniformity. Both the optical transmittance and electrical resistance uniformity of FTO film-coated PET were investigated. The result shows that sheet resistance uniformity and the transmittance of the film are affected significantly by the changes in bubbler pressure but are less influenced by the working pressure of the ECR-MOCVD system.

  6. Growth, interfacial alloying, and oxidation of ultra-thin Al films on Ru(0001)

    NASA Astrophysics Data System (ADS)

    Wu, Yutong; Tao, Hui-Shu; Garfunkel, Eric; Madey, Theodore E.; Shinn, Neal D.

    1995-08-01

    The growth and oxidation of ultra-thin aluminum films on Ru(0001) have been studied by low energy ion scattering (LEIS) and X-ray photoelectron spectroscopy (XPS) using both Mg K α and synchrotron soft X-ray radiation. For Al films of average thickness ˜ 15 Å deposited at 300 K, LEIS demonstrates that the Ru substrate is completely covered. Upon annealing to ˜ 1000 K LEIS shows the reappearance of Ru at the surface. At the same time, the metallic Al 2p peak shifts to lower binding energy and a low binding energy shoulder appears on the Ru 3d peak, suggesting {Al}/{Ru} interfacial alloying. Annealing Al films to ˜ 1000 K in 1 × 10 -4 Torr oxygen produces an oxidized surface layer that completely covers the Ru substrate; the resultant aluminum oxide films are stoichiometric.

  7. Edaravone mitigates hexavalent chromium-induced oxidative stress and depletion of antioxidant enzymes while estrogen restores antioxidant enzymes in the rat ovary in F1 offspring.

    PubMed

    Stanley, Jone A; Sivakumar, Kirthiram K; Arosh, Joe A; Burghardt, Robert C; Banu, Sakhila K

    2014-07-01

    Environmental contamination of drinking water with chromium (Cr) has been increasing in more than 30 cities in the United States. Previous studies from our group have shown that Cr affects reproductive functions in female Sprague Dawley rats. Although it is impossible to completely remove Cr from the drinking water, it is imperative to develop effective intervention strategies to inhibit Cr-induced deleterious health effects. Edaravone (EDA), a potential inhibitor of free radicals, has been clinically used to treat cancer and cardiac ischemia. This study evaluated the efficacy of EDA against Cr-induced ovarian toxicity. Results showed that maternal exposure to CrVI in rats increased follicular atresia, decreased steroidogenesis, and delayed puberty in F1 offspring. CrVI increased oxidative stress and decreased antioxidant (AOX) enzyme levels in the ovary. CrVI increased follicle atresia by increased expression of cleaved caspase 3, and decreased expression of Bcl2 and Bcl2l1 in the ovary. EDA mitigated or inhibited the effects of CrVI on follicle atresia, pubertal onset, steroid hormone levels, and AOX enzyme activity, as well as the expression of Bcl2 and Bcl2l1 in the ovary. In a second study, CrVI treatment was withdrawn, and F1 rats were injected with estradiol (E₂) (10 μg in PBS/ethanol per 100 g body weight) for a period of 2 wk to evaluate whether E₂ treatment will restore Cr-induced depletion of AOX enzymes. E₂ restored CrVI-induced depletion of glutathione peroxidase 1, catalase, thioredoxin 2, and peroxiredoxin 3 in the ovary. This is the first study to demonstrate the protective effects of EDA against any toxicant in the ovary.

  8. Edaravone Mitigates Hexavalent Chromium-Induced Oxidative Stress and Depletion of Antioxidant Enzymes while Estrogen Restores Antioxidant Enzymes in the Rat Ovary in F1 Offspring1

    PubMed Central

    Stanley, Jone A.; Sivakumar, Kirthiram K.; Arosh, Joe A.; Burghardt, Robert C.; Banu, Sakhila K.

    2014-01-01

    ABSTRACT Environmental contamination of drinking water with chromium (Cr) has been increasing in more than 30 cities in the United States. Previous studies from our group have shown that Cr affects reproductive functions in female Sprague Dawley rats. Although it is impossible to completely remove Cr from the drinking water, it is imperative to develop effective intervention strategies to inhibit Cr-induced deleterious health effects. Edaravone (EDA), a potential inhibitor of free radicals, has been clinically used to treat cancer and cardiac ischemia. This study evaluated the efficacy of EDA against Cr-induced ovarian toxicity. Results showed that maternal exposure to CrVI in rats increased follicular atresia, decreased steroidogenesis, and delayed puberty in F1 offspring. CrVI increased oxidative stress and decreased antioxidant (AOX) enzyme levels in the ovary. CrVI increased follicle atresia by increased expression of cleaved caspase 3, and decreased expression of Bcl2 and Bcl2l1 in the ovary. EDA mitigated or inhibited the effects of CrVI on follicle atresia, pubertal onset, steroid hormone levels, and AOX enzyme activity, as well as the expression of Bcl2 and Bcl2l1 in the ovary. In a second study, CrVI treatment was withdrawn, and F1 rats were injected with estradiol (E2) (10 μg in PBS/ethanol per 100 g body weight) for a period of 2 wk to evaluate whether E2 treatment will restore Cr-induced depletion of AOX enzymes. E2 restored CrVI-induced depletion of glutathione peroxidase 1, catalase, thioredoxin 2, and peroxiredoxin 3 in the ovary. This is the first study to demonstrate the protective effects of EDA against any toxicant in the ovary. PMID:24804965

  9. Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

    NASA Astrophysics Data System (ADS)

    Jiang, Hua; Chou, Kang Wei; Petrash, Stanislas; Williams, Garth; Thieme, Juergen; Nykypanchuk, Dmytro; Li, Li; Muto, Atsushi; Chen-Wiegart, Yu-chen Karen

    2016-08-01

    Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and wide angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100-200 nm wide by 1 μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. Utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.

  10. Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

    DOE PAGES

    Jiang, Hua; Chou, Kang Wei; Petrash, Stanislas; ...

    2016-09-02

    Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and widemore » angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100–200 nm wide by 1μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. In conclusion, utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.« less

  11. Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

    SciTech Connect

    Jiang, Hua; Chou, Kang Wei; Petrash, Stanislas; Williams, Garth; Thieme, Juergen; Nykypanchuk, Dmytro; Li, Li; Muto, Atsushi; Chen-Wiegart, Yu-chen Karen

    2016-09-02

    Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and wide angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100–200 nm wide by 1μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. In conclusion, utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.

  12. Solution-cast metal oxide thin film electrocatalysts for oxygen evolution.

    PubMed

    Trotochaud, Lena; Ranney, James K; Williams, Kerisha N; Boettcher, Shannon W

    2012-10-17

    Water oxidation is a critical step in water splitting to make hydrogen fuel. We report the solution synthesis, structural/compositional characterization, and oxygen evolution reaction (OER) electrocatalytic properties of ~2-3 nm thick films of NiO(x), CoO(x), Ni(y)Co(1-y)O(x), Ni(0.9)Fe(0.1)O(x), IrO(x), MnO(x), and FeO(x). The thin-film geometry enables the use of quartz crystal microgravimetry, voltammetry, and steady-state Tafel measurements to study the electrocatalytic activity and electrochemical properties of the oxides. Ni(0.9)Fe(0.1)O(x) was found to be the most active water oxidation catalyst in basic media, passing 10 mA cm(-2) at an overpotential of 336 mV with a Tafel slope of 30 mV dec(-1) with oxygen evolution reaction (OER) activity roughly an order of magnitude higher than IrO(x) control films and similar to the best known OER catalysts in basic media. The high activity is attributed to the in situ formation of layered Ni(0.9)Fe(0.1)OOH oxyhydroxide species with nearly every Ni atom electrochemically active. In contrast to previous reports that showed synergy between Co and Ni oxides for OER catalysis, Ni(y)Co(1-y)O(x) thin films showed decreasing activity relative to the pure NiO(x) films with increasing Co content. This finding is explained by the suppressed in situ formation of the active layered oxyhydroxide with increasing Co. The high OER activity and simple synthesis make these Ni-based catalyst thin films useful for incorporating with semiconductor photoelectrodes for direct solar-driven water splitting or in high-surface-area electrodes for water electrolysis.

  13. Structure and properties of uranium oxide thin films deposited by pulsed dc magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lin, Jianliang; Dahan, Isaac; Valderrama, Billy; Manuel, Michele V.

    2014-05-01

    Crystalline uranium oxide thin films were deposited in an unbalanced magnetron sputtering system by sputtering from a depleted uranium target in an Ar + O2 mixture using middle frequency pulsed dc magnetron sputtering. The substrate temperature was constantly maintained at 500 °C. Different uranium oxide phases (including UO2-x, UO2, U3O7 and U3O8) were obtained by controlling the percentage of the O2 flow rate to the total gas flow rate (f) in the chamber. The crystal structure of the films was characterized using X-ray diffraction and the microstructure of the films was studied using transmission electron microscopy and atom probe tomography. When the f was below 10%, the film contains a mixture of metallic uranium and UO2-x phases. As the f was controlled in the range of 10-13%, UO2 films with a (2 2 0) preferential orientation were obtained. The oxide phase rapidly changed to a mixture of U3O7 and U3O8 as the f was increased to the range of 15-18%. Further increasing the f to 20% and above, polycrystalline U3O8 thin films with a (0 0 1) preferential orientation were formed. The hardness and Young's modulus of the uranium oxide films were evaluated using nanoindentation. The film containing a single UO2 phase exhibited the maximum hardness of 14.3 GPa and a Young's modulus of 195 GPa. The UO2 thin film also exhibited good thermal stability in that no phase change was observed after annealing at 600 °C in vacuum for 104 h.

  14. All-amorphous-oxide transparent, flexible thin-film transistors. Efficacy of bilayer gate dielectrics.

    PubMed

    Liu, Jun; Buchholz, D Bruce; Hennek, Jonathan W; Chang, Robert P H; Facchetti, Antonio; Marks, Tobin J

    2010-09-01

    Optically transparent and mechanically flexible thin-film transistors (TF-TFTs) composed exclusively of amorphous metal oxide films are fabricated on plastic substrates by combining an amorphous Ta(2)O(5)/SiO(x) bilayer transparent oxide insulator (TOI) gate dielectric with an amorphous zinc-indium-tin oxide (a-ZITO) transparent oxide semiconductor (TOS) channel and a-ZITO transparent oxide conductor (TOC) electrodes. The bilayer gate dielectric is fabricated by the post-cross-linking of vapor-deposited hexachlorodisiloxane-derived films to form thin SiO(x) layers (v-SiO(x)) on amorphous Ta(2)O(5) (a-Ta(2)O(5)) films grown by ion-assisted deposition at room temperature. The a-Ta(2)O(5)/v-SiO(x) bilayer TOI dielectric integrates the large capacitance of the high dielectric constant a-Ta(2)O(5) layer with the excellent dielectric/semiconductor interfacial compatibility of the v-SiO(x) layer in a-ZITO TOS-based TF-TFTs. These all-amorphous-oxide TF-TFTs, having a channel length and width of 100 and 2000 microm, respectively, perform far better than a-Ta(2)O(5)-only devices and exhibit saturation-regime field-effect mobilities of approximately 20 cm(2)/V x s, on-currents >10(-4) A, and current on-off ratios >10(5). These TFTs operate at low voltages (approximately 4.0 V) and exhibit good visible-region optical transparency and excellent mechanical flexibility.

  15. Effect of silver incorporation in phase formation and band gap tuning of tungsten oxide thin films

    SciTech Connect

    Jolly Bose, R.; Kumar, R. Vinod; Sudheer, S. K.; Mahadevan Pillai, V. P.; Reddy, V. R.; Ganesan, V.

    2012-12-01

    Silver incorporated tungsten oxide thin films are prepared by RF magnetron sputtering technique. The effect of silver incorporation in micro structure evolution, phase enhancement, band gap tuning and other optical properties are investigated using techniques such as x-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, scanning electron microscopy, energy dispersive x-ray spectroscopy, and UV-Visible spectroscopy. Effect of silver addition in phase formation and band gap tuning of tungsten oxide thin films are investigated. It is found that the texturing and phase formation improves with enhancement in silver content. It is also found that as the silver incorporation enhances the thickness of the films increases at the same time the strain in the film decreases. Even without annealing the desired phase can be achieved by doping with silver. A broad band centered at the wavelength 437 nm is observed in the absorption spectra of tungsten oxide films of higher silver incorporation and this can be attributed to surface plasmon resonance of silver atoms present in the tungsten oxide matrix. The transmittance of the films is decreased with increase in silver content which can be due to increase in film thickness, enhancement of scattering, and absorption of light caused by the increase of grain size, surface roughness and porosity of films and enhanced absorption due to surface plasmon resonance of silver. It is found that silver can act as the seed for the growth of tungsten oxide grains and found that the grain size increases with silver content which in turn decreases the band gap of tungsten oxide from 3.14 eV to 2.70 eV.

  16. Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

    NASA Astrophysics Data System (ADS)

    Skarlinski, Michael D.; Quesnel, David J.

    2015-12-01

    Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical properties of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu2O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of the films

  17. Characterization of sputtered iridium oxide thin films on planar and laser micro-structured platinum thin film surfaces for neural stimulation applications

    NASA Astrophysics Data System (ADS)

    Thanawala, Sachin

    Electrical stimulation of neurons provides promising results for treatment of a number of diseases and for restoration of lost function. Clinical examples include retinal stimulation for treatment of blindness and cochlear implants for deafness and deep brain stimulation for treatment of Parkinsons disease. A wide variety of materials have been tested for fabrication of electrodes for neural stimulation applications, some of which are platinum and its alloys, titanium nitride, and iridium oxide. In this study iridium oxide thin films were sputtered onto laser micro-structured platinum thin films by pulsed-DC reactive sputtering of iridium metal in oxygen-containing atmosphere, to obtain high charge capacity coatings for neural stimulation applications. The micro-structuring of platinum films was achieved by a pulsed-laser-based technique (KrF excimer laser emitting at lambda=248nm). The surface morphology of the micro-structured films was studied using different surface characterization techniques. In-vitro biocompatibility of these laser micro-structured films coated with iridium oxide thin films was evaluated using cortical neurons isolated from rat embryo brain. Characterization of these laser micro-structured films coated with iridium oxide, by cyclic voltammetry and impedance spectroscopy has revealed a considerable decrease in impedance and increase in charge capacity. A comparison between amorphous and crystalline iridium oxide thin films as electrode materials indicated that amorphous iridium oxide has significantly higher charge capacity and lower impedance making it preferable material for neural stimulation application. Our biocompatibility studies show that neural cells can grow and differentiate successfully on our laser micro-structured films coated with iridium oxide. This indicates that reactively sputtered iridium oxide (SIROF) is biocompatible.

  18. [Chromium and insulin resistance].

    PubMed

    Kleefstra, N; Bilo, H J; Bakker, S J; Houweling, S T

    2004-01-31

    Since as early as the 50s of the last century, it has been known that chromium is essential for normal glucose metabolism. Too little chromium in the diet may lead to insulin resistance. However, there is still no standard against which chromium deficiency can be established. Nevertheless, chromium supplements are becoming increasingly popular. Various systematic reviews have been unable to demonstrate any effects of chromium on glycaemic regulation (possibly due partly to the low dosages used), but there is a slight reduction in body weight averaging 1 kg. In a double-blind randomised placebo-controlled trial in a Chinese population with type-2 diabetes mellitus, supplementation with 1000 micrograms of chromium led to a fall in the glycosylated haemoglobin level (HbA1c) by 2%. Toxic effects of chromium are seldom seen; recently, however, the safety of one of the dosage forms of chromium, chromium picolinate, has been questioned. One should be aware that individual patients with type-2 diabetes mellitus may have an increased risk of hypoglycaemic episodes when taking chromium supplements as self-medication.

  19. Thermal stimulated current response in cupric oxide single crystal thin films over a wide temperature range

    NASA Astrophysics Data System (ADS)

    Yang, Kungan; Wu, Shuxiang; Yu, Fengmei; Zhou, Wenqi; Wang, Yunjia; Meng, Meng; Wang, Gaili; Zhang, Yueli; Li, Shuwei

    2017-01-01

    Cupric oxide single crystal thin films (~26 nm) were grown by plasma-assisted molecular beam epitaxy. X-ray diffraction, Raman spectra and in situ reflection high-energy electron diffraction show that the thin films are 2  ×  2 reconstructed with an in-plane compression and out-of-plane stretching. A thermal stimulated current measurement indicates that the electric polarization response is shown in the special 2D cupric oxide single crystal thin film over a wide temperature range from 130 K to near-room temperature. We infer that the abnormal electric response involves the changing of phase transition temperature induced by structure distortion, the spin frustration and the magnetic fluctuation effect of a short-range magnetic order, or the combined action of both of the two factors mentioned above. This work suggests a promising clue for finding new room temperature single phase multiferroics or tuning phase transition temperatures.

  20. Interaction of Zr with oxidized and partially reduced ceria thin films

    NASA Astrophysics Data System (ADS)

    Wang, Weijia; Hu, Shanwei; Han, Yong; Pan, Xiao; Xu, Qian; Zhu, Junfa

    2016-11-01

    The growth and electronic properties of Zr on the ceria thin films were studied by X-ray photoelectron spectroscopy, low energy electron diffraction (LEED), scanning tunneling microscopy (STM) and work function measurements. Metallic zirconium was vapor-deposited on the well-ordered fully oxidized CeO2(111) and partially reduced CeO2-x(111) (0 < x < 0.5) thin films, which were epitaxially grown on a Ru(0001) substrate, under ultrahigh vacuum (UHV) conditions. The results show that the deposition of Zr on both ceria surfaces leads to electron transfer from Zr to ceria, accompanied by partial reduction of Ce from Ce4 + to Ce3 + states and oxidation of metallic Zr to Zr4 +. Moreover, with increasing the Zr coverage, the reduction degree of ceria films increases and eventually only Ce3 + is observed at a high coverage of Zr. The STM results suggest that Zr grows two-dimensionally (2D) on the CeO2(111) thin film at low coverages due to the strong interaction between Zr and CeO2(111).

  1. Ionic and electrochemical phenomena induced by structural and chemical defects in oxide thin films

    NASA Astrophysics Data System (ADS)

    Aruta, Carmela

    Interactions at the surfaces/interfaces between complex oxides and gaseous environment are fundamental for the efficiency of many environmental friendly systems and applications. Such interactions can be modified by the intricate interrelationship between microstructure and chemical substitution defects, being their role on functional properties, such as ionic conductivity and surface reaction rates, as particularly relevant as difficult to discriminate. New possibilities in thin film fabrication allow growth of oxide thin films with a more precise control of the structure and chemical stoichiometry, thus unveiling new perspectives in the study of electrochemical effects for physical functionalities, through nanoscale characterizations by complementary state-of-art techniques. As an example of interfacial structural defect effects, we will discuss the case of yttrium doped barium zirconate thin films, where the cation substitutions represent a viable mechanism, alternative to the formation of dislocations near the interface, to relieve the strain building up in the film growing on a highly mismatched substrate, thus providing fast transport pathways together with enhanced interface electrochemical reactivity. The effect of the chemical defects will be further presented in the case of samarium-doped ceria films with different doping concentration. We will explain the role of the trivalent doping on the conduction mechanism, i.e. proton or oxygen ion, which in turns may greatly influence the surface reactivity.

  2. Ultrafine cobalt nanoparticles supported on reduced graphene oxide: Efficient catalyst for fast reduction of hexavalent chromium at room temperature

    NASA Astrophysics Data System (ADS)

    Xu, Tingting; Xue, Jinjuan; Zhang, Xiaolei; He, Guangyu; Chen, Haiqun

    2017-04-01

    A novel composite ultrafine cobalt nanoparticles-reduced graphene oxide (Co-RGO) was firstly synthesized through a modified one-step solvothermal method with Co(OH)2 as the precursor. The prepared low-cost Co-RGO composite exhibited excellent catalytic activity for the reduction of highly toxic Cr(VI) to nontoxic Cr(III) at room temperature when formic acid (HCOOH) was employed as the reductant, and its catalytic performance was even comparable with that of noble metal-based catalysts in the same reduction reaction. Moreover, Co-RGO composite could be readily recovered under an external magnetic field and efficiently participated in recycled reaction for Cr(VI) reduction.

  3. The growth and evolution of thin oxide films on delta-plutonium surfaces

    SciTech Connect

    Garcia Flores, Harry G; Pugmire, David L

    2009-01-01

    The common oxides of plutonium are the dioxide (PuO{sub 2}) and the sesquioxide (Pu{sub 2}O{sub 3}). The structure of an oxide on plutonium metal under air at room temperature is typically described as a thick PuO{sub 2} film at the gas-oxide interface with a thinner PuO{sub 2} film near the oxide-metal substrate interface. In a reducing environment, such as ultra high vacuum, the dioxide (Pu{sup 4+}; O/Pu = 2.0) readily converts to the sesquioxide (Pu{sup 3+}; O/Pu = 1.5) with time. In this work, the growth and evolution of thin plutonium oxide films is studied with x-ray photoelectron spectroscopy (XPS) under varying conditions. The results indicate that, like the dioxide, the sesquioxide is not stable on a very clean metal substrate under reducing conditions, resulting in substoichiometric films (Pu{sub 2}O{sub 3-y}). The Pu{sub 2}O{sub 3-y} films prepared exhibit a variety of stoichiometries (y = 0.2-1) as a function of preparation conditions, highlighting the fact that caution must be exercised when studying plutonium oxide surfaces under these conditions and interpreting resulting data.

  4. Synthesis of Au microwires by selective oxidation of Au-W thin-film composition spreads.

    PubMed

    Hamann, Sven; Brunken, Hayo; Salomon, Steffen; Meyer, Robert; Savan, Alan; Ludwig, Alfred

    2013-02-01

    We report on the stress-induced growth of Au microwires out of a surrounding Au-W matrix by selective oxidation, in view of a possible application as 'micro-Velcro'. The Au wires are extruded due to the high compressive stress in the tungsten oxide formed by oxidation of elemental W. The samples were fabricated as a thin-film materials library using combinatorial sputter deposition followed by thermal oxidation. Sizes and shapes of the Au microwires were investigated as a function of the W to Au ratio. The coherence length and stress state of the Au microwires were related to their shape and plastic deformation. Depending on the composition of the Au-W precursor, the oxidized samples showed regions with differently shaped Au microwires. The Au48W52 composition yielded wires with the maximum length to diameter ratio due to the high compressive stress in the tungsten oxide matrix. The values of wire length (35 μm) and diameter (2 μm) achieved at the Au48W52 composition are suitable for micro-Velcro applications.

  5. Photochemical Studies on Chromium(III) Cyclam Complexes: Photosensitization with Semiconductor Quantum Dots and Nitric Oxide Release

    NASA Astrophysics Data System (ADS)

    Ostrowski, Alexis D.

    The small molecule nitric oxide (NO) is involved in a variety of biological processes including blood pressure regulation, neural transmission, immune response, and cell apoptosis. In this context, the goal of the described research is to detail the development of systems for photochemical NO release that could be used in a new type of photodynamic therapy (PDT), where site-specific irradiation leads to photochemical NO release. The metal complex trans-Cr(cyclam)(ONO)2 + (CrONO) is a NO precursor, where visible light irradiation of aqueous solutions at muM and lower concentrations, leads to sufficient NO release to activate the enzyme soluble guanylyl cyclase (sGC). In addition, photolysis of solutions 100 nM CrONO and greater leads to significant vasorelaxation of porcine coronary arteries. Irradiation of CrONO in aerated aqueous solutions the presence of the biological reductant glutathione (GSH) also leads to a greater net NO release. The investigation of systems using semi-conductor quantum dots (QDs) as photosensitzers for CrONO is also described. We have demonstrated that water-soluble CdSe/ZnS core/shell QDs form electrostatic assemblies with the CrONO complexes and act as antenna for photosensitized release of nitric oxide (NO). Energy transfer is consistent with a Forster resonance energy transfer (FRET) mechanism, as the rate of energy transfer is a function of the overlap between the QD (donor) emission and the Cr(III) complex (acceptor) absorbance. These results provide a guideline for the design of other QD-based materials and devices that rely on photosensitized energy transfer.

  6. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    SciTech Connect

    Lee, Ching-Ting Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-28

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g{sub m} change, threshold voltage V{sub T} change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  7. High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors.

    PubMed

    Jaehnike, Felix; Pham, Duy Vu; Anselmann, Ralf; Bock, Claudia; Kunze, Ulrich

    2015-07-01

    A silicon oxide gate dielectric was synthesized by a facile sol-gel reaction and applied to solution-processed indium oxide based thin-film transistors (TFTs). The SiOx sol-gel was spin-coated on highly doped silicon substrates and converted to a dense dielectric film with a smooth surface at a maximum processing temperature of T = 350 °C. The synthesis was systematically improved, so that the solution-processed silicon oxide finally achieved comparable break downfield strength (7 MV/cm) and leakage current densities (<10 nA/cm(2) at 1 MV/cm) to thermally grown silicon dioxide (SiO2). The good quality of the dielectric layer was successfully proven in bottom-gate, bottom-contact metal oxide TFTs and compared to reference TFTs with thermally grown SiO2. Both transistor types have field-effect mobility values as high as 28 cm(2)/(Vs) with an on/off current ratio of 10(8), subthreshold swings of 0.30 and 0.37 V/dec, respectively, and a threshold voltage close to zero. The good device performance could be attributed to the smooth dielectric/semiconductor interface and low interface trap density. Thus, the sol-gel-derived SiO2 is a promising candidate for a high-quality dielectric layer on many substrates and high-performance large-area applications.

  8. Polymer-assisted deposition of co-doped zinc oxide thin films for the detection of aromatic organic compounds.

    PubMed

    Li, Wei; Kim, Dojin

    2011-12-01

    Co-doped Zinc oxide thin films are deposited onto SiO2/Si substrate by polymer-assisted deposition method. The surface morphology, structures and chemical states of the thin films are examined by scanning electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. The gas-sensing properties of the thin films upon exposure to aromatic organic compound vapors are also investigated. Co-doping is shown to be very effective in enhancing the response of ZnO thin film to aromatic organic compound.

  9. Investigations on MGy ionizing dose effects in thin oxides of micro-electronic devices

    SciTech Connect

    Gaillardin, M.; Paillet, P.; Raine, M.; Martinez, M.; Marcandella, C.; Duhamel, O.; Richard, N.; Leray, J.L.; Goiffon, V.; Corbiere, F.; Rolando, S.; Molina, R.; Magnan, P.; Girard, S.; Ouerdane, Y.; Boukenter, A.

    2015-07-01

    Total ionizing dose (TID) effects have been studied for a long time in micro-electronic components designed to operate in natural and artificial environments. In most cases, TID induces both charge trapping in the bulk of irradiated oxides and the buildup of interface traps located at semiconductor/dielectric interfaces. Such effects result from basic mechanisms driven by both the shape of the electric field which stands into the oxide and by fabrication process parameters inducing pre-existing traps in the oxide's bulk. From the pioneering studies based on 'thick' oxide technologies to the most recent ones dedicated to innovative technologies, most studies concluded that the impact of total ionizing dose effects reduces with the oxide thinning. This is specifically the case for the gate-oxide of Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) for which it is generally considered that TID is not a major issue anymore at kGy dose ranges. TID effects are now mainly due to charge trapping in the field oxides such as Shallow Trench Isolation. This creates either parasitic conduction paths or Radiation-Induced Narrow Channel Effects (RINCE). Static current-voltage (I-V) electrical characteristics are then modified through a significant increase of the off-current of NMOS transistors or by shifting the whole I-V curves (of both NMOS and PMOS transistors). Based on these assumptions, no significant shift of I-V curves should be observed in modern bulk CMOS technologies. However, such phenomenon may not be directly extrapolated to higher TID ranges, typically of several MGy for which only few data are available in the literature. This paper presents evidences of large threshold voltage shifts measured at MGy dose levels despite the fact that transistors are designed in a submicron bulk technology which features a 7-nm thin gate-oxide on GO2 transistors dedicated to mixed analog/digital integrated circuits. Such electrical shifts are encountered on PMOS

  10. State-of-the-art Thin Film Electrolytes For Solid Oxide Fuel Cells

    SciTech Connect

    Thevuthasan, Suntharampillai; Nandasiri, Manjula I.

    2015-02-19

    State-of-the-Art solid oxide fuel cells (SOFC) are amongst the main candidates for clean energy technology due to their high efficiency, fuel flexibility, low air pollution, and minimal greenhouse gas emission. However, high operational temperature of SOFC is a greater challenge in commercialization these devices for low cost and portable applications. High temperature operation of SOFC degrades its performance with aging, limits the selection of materials for fuel cell components, and increases the fabrication cost. Thus, there have been enormous efforts to improve the properties of existing materials and develop new materials for SOFC components in order to lower the operating temperature of SOFC. Recent advances in thin film technology have also been utilized to develop new materials with improved properties for SOFC. One of the key components in SOFC is the electrolyte and several research groups are working on developing new electrolyte materials. In this chapter, we will discuss the recent advances in thin film SOFC electrolytes. This extensive discussion includes the evolution of doped ceria, doped zirconia, and multilayer hetero-structured thin film electrolytes. The newly developed nanoscale thin films and multi-layer hetero-structures with improved oxygen ionic conductivity will have significant impact on SOFC devices.

  11. Synthesis of Tantalum-Doped Tin Oxide Thin Films by Magnetron Sputtering for Photovoltaic Applications

    NASA Astrophysics Data System (ADS)

    Nguyen, Ngoc Minh; Luu, Manh Quynh; Nguyen, Minh Hieu; Nguyen, Duy Thien; Bui, Van Diep; Truong, Thanh Tu; Pham, Van Thanh; Nguyen-Tran, Thuat

    2017-01-01

    Tantalum-doped tin oxide transparent conductive thin films were deposited on glass substrates by radio frequency and direct current reactive magnetron co-sputtering methods in an argon and oxygen environment. Optimization of the thin films for photovoltaic applications was performed using a dimensionless figure of merit by combining electrical and transparency properties. The optimized thin film showed a weight-averaged transmittance of 83%, a band gap value of 3.2 eV, resistivity of 5.2 × 10-3 Ω cm, and bulk carrier concentration of 1.2 × 1020 cm-3. The lowest resistivity among all films was 2.1 × 10-3 Ω cm, corresponding to a weight-averaged transmittance of 62%. The optimized deposition condition was carried out by co-sputtering on heated substrates at 270°C. Thin films deposited under this optimized condition were applied for our perovskite solar cells, and demonstrated promising power conversion efficiency.

  12. The Effect of Manganese Additions on the Reactive Evaporation of Chromium in Ni-Cr Alloys

    SciTech Connect

    Holcomb, Gordon R.; Alman, David E.

    2004-10-20

    Chromium is used as an alloy addition in stainless steels and nickel-chromium alloys to form protective chromium oxide scales. Chromium oxide undergoes reactive evaporation in high temperature exposures in the presence of oxygen and/or water vapor. The deposition of gaseous chromium species onto solid oxide fuel cell electrodes can reduce the efficiency of the fuel cell. Manganese additions to the alloy can reduce the activity of chromium in the oxide, either from solid solution replacement of chromium with manganese (at low levels of manganese) or from the formation of manganese-chromium spinels (at high levels of manganese). This reduction in chromium activity leads to a predicted reduction in chromium evaporation by as much as a factor of 35 at 800 C and 55 at 700 C. The results of evaporation loss measurements on nickel-chromium-manganese alloys are compared with the predicted reduction. Quantifying the effects of manganese additions on chromium evaporation should aid alloy development of metallic interconnects and balance-of-plant alloys.

  13. The enriched chromium neutrino source for GALLEX

    SciTech Connect

    Hartmann, F.X.; Hahn, R.L.

    1991-01-18

    The preparation and study of an intense source of neutrinos in the form of neutron irradiated materials which are enriched in Cr-50 for use in the GALLEX solar neutrino experiment are discussed. Chromyl fluoride gas is enriched in the Cr-50 isotope by gas centrifugation and subsequently converted to a very stable form of chromium oxide. The results of neutron activation analyses of such chromium samples indicate low levels of any long-lived activities, but show that short-lived activities, in particular Na-24, may be of concern. These results show that irradiating chromium oxide enriched in Cr-50 is preferable to irradiating either natural chromium or argon gas as a means of producing a neutrino source to calibrate the GALLEX detector. These results of the impurity level analysis of the enriched chromyl fluoride gas and its conversion to the oxide are also of interest to work in progress by other members of the Collaboration investigating an alternative conversion of the enriched gas to chromium metal. 35 refs., 12 figs., 5 tabs.

  14. Stabilization and solidification of chromium-contaminated soil

    SciTech Connect

    Cherne, C.A.; Thomson, B.M.; Conway, R.

    1997-11-01

    Chromium-contaminated soil is a common environmental problem in the United States as a result of numerous industrial processes involving chromium. Hexavalent chromium [Cr(VI)] is the species of most concern because of its toxicity and mobility in groundwater. One method of diminishing the environmental impact of chromium is to reduce it to a trivalent oxidation state [Cr(III)], in which it is relatively insoluble and nontoxic. This study investigated a stabilization and solidification process to minimize the chromium concentration in the Toxicity Characteristic Leaching Procedure (TCLP) extract and to produce a solidified waste form with a compressive strength in the range of 150 to 300 pounds per square inch (psi). To minimize the chromium in the TCLP extract, the chromium had to be reduced to the trivalent oxidation state. The average used in this study was an alluvium contaminated with chromic and sulfuric acid solutions. The chromium concentration in the in the in situ soil was 1212 milligrams per kilogram (mg/kg) total chromium and 275 mg/kg Cr(VI). The effectiveness of iron, ferrous sulfate to reduce Cr(VI) was tested in batch experiments.

  15. Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

    NASA Astrophysics Data System (ADS)

    Wei Shih, Chen; Chin, Albert; Fu Lu, Chun; Fang Su, Wei

    2016-01-01

    High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm2/Vs field-effect mobility, high ION/IOFF of 2.3 × 107, small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals.

  16. Morphological impact of zinc oxide layers on the device performance in thin-film transistors.

    PubMed

    Faber, Hendrik; Klaumünzer, Martin; Voigt, Michael; Galli, Diana; Vieweg, Benito F; Peukert, Wolfgang; Spiecker, Erdmann; Halik, Marcus

    2011-03-01

    Zinc oxide thin-films are prepared either by spin coating of an ethanolic dispersion of nanoparticles (NP, diameter 5 nm) or by spray pyrolysis of a zinc acetate dihydrate precursor. High-resolution electron microscopy studies reveal a monolayer of particles for the low temperature spin coating approach and larger crystalline domains of more than 30 nm for the spray pyrolysis technique. Thin-film transistor devices (TFTs) based on spray pyrolysis films exhibit higher electron mobilities of up to 24 cm2 V(-1) s(-1) compared to 0.6 cm2 V(-1) s(-1) for NP based TFTs. These observations were dedicated to a reduced number of grain boundaries within the transistor channel.

  17. Characterization and simulation on antireflective coating of amorphous silicon oxide thin films with gradient refractive index

    NASA Astrophysics Data System (ADS)

    Huang, Lu; Jin, Qi; Qu, Xingling; Jin, Jing; Jiang, Chaochao; Yang, Weiguang; Wang, Linjun; Shi, Weimin

    2016-08-01

    The optical reflective properties of silicon oxide (SixOy) thin films with gradient refractive index are studied both theoretically and experimentally. The thin films are widely used in photovoltaic as antireflective coatings (ARCs). An effective finite difference time domain (FDTD) model is built to find the optimized reflection spectra corresponding to structure of SixOy ARCs with gradient refractive index. Based on the simulation analysis, it shows the variation of reflection spectra with gradient refractive index distribution. The gradient refractive index of SixOy ARCs can be obtained in adjustment of SiH4 to N2O ratio by plasma-enhanced chemical vapor deposition (PECVD) system. The optimized reflection spectra measured by UV-visible spectroscopy confirms to agree well with that simulated by FDTD method.

  18. The solution growth route and characterization of electrochromic tungsten oxide thin films

    SciTech Connect

    Todorovski, Toni; Najdoski, Metodija

    2007-12-04

    Electrochromic tungsten oxide thin films were prepared by using an aqueous solution of Na{sub 2}WO{sub 4}.2H{sub 2}O and dimethyl sulfate. Various techniques were used for the characterization of the films such as X-ray diffraction, cyclic voltammetry, SEM analysis and VIS-spectroscopy. The thin film durability was tested in an aqueous solution of LiClO{sub 4} (0.1 mol/dm{sup 3}) for about 7000 cycles followed by cyclic voltammetry. No significant changes in the cyclic voltammograms were found, thus proving the high durability of the films. The optical transmittance spectra of coloured and bleached states showed significant change in the transmittance, which makes these films favorable for electrochromic devices.

  19. Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals

    PubMed Central

    Wei Shih, Chen; Chin, Albert; Fu Lu, Chun; Fang Su, Wei

    2016-01-01

    High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm2/Vs field-effect mobility, high ION/IOFF of 2.3 × 107, small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals. PMID:26744240

  20. Extracting the effective mass of electrons in transparent conductive oxide thin films using Seebeck coefficient

    SciTech Connect

    Wang, Yaqin; Zhu, Junhao; Tang, Wu

    2014-05-26

    A method is proposed that combines Seebeck coefficient and carrier concentration to determine the electron effective mass of transparent conductive oxide (TCO) thin films. Experiments were conducted to test the validity of this approach on the transparent conductive Ga-doped ZnO thin films deposited by magnetron sputtering. An evident agreement of the calculated electron effective mass of the films is observed between the proposed approach and the previous studies. Besides, the optical carrier concentration and mobility derived from the calculated electron effective mass and spectroscopic ellipsometry using a complex dielectric function are consistent with those from direct Hall-effect measurement. The agreements suggest that Seebeck coefficient can serve as an alternative tool for extracting the effective mass of electrons in TCO films.

  1. Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier

    SciTech Connect

    Cho, Byungsu; Choi, Yonghyuk; Shin, Seokyoon; Jeon, Heeyoung; Seo, Hyungtak; Jeon, Hyeongtag

    2014-01-27

    We demonstrate an enhanced electrical stability through a Ti oxide (TiO{sub x}) layer on the amorphous InGaZnO (a-IGZO) back-channel; this layer acts as a surface polarity modifier. Ultrathin Ti deposited on the a-IGZO existed as a TiO{sub x} thin film, resulting in oxygen cross-binding with a-IGZO surface. The electrical properties of a-IGZO thin film transistors (TFTs) with TiO{sub x} depend on the surface polarity change and electronic band structure evolution. This result indicates that TiO{sub x} on the back-channel serves as not only a passivation layer protecting the channel from ambient molecules or process variables but also a control layer of TFT device parameters.

  2. Preparation of vanadium oxide thin films modified with Ag using a hybrid deposition configuration

    NASA Astrophysics Data System (ADS)

    Gonzalez-Zavala, F.; Escobar-Alarcón, L.; Solís-Casados, D. A.; Rivera-Rodríguez, C.; Basurto, R.; Haro-Poniatowski, E.

    2016-04-01

    The application of a hybrid deposition configuration, formed by the interaction of a laser ablation plasma with a flux of atomic vapor, to deposit vanadium oxide thin films modified with different amounts of silver, is reported. The effect of the amount of Ag incorporated in the films on their structural, morphological, compositional and optical properties was studied. The obtained results reveal that films with variable Ag content from 11.7 to 24.6 at.% were obtained. Depending on the silver content, the samples show very different surface morphologies. Optical characterization indicates the presence of nanostructures of Ag. Thin films containing silver exhibit better photocatalytic performances than unmodified V2O5 films. Raman spectra reveal that as the silver content is increased, the signals associated with V2O5 disappear and new modes attributed mainly to silver vanadates appear suggesting the formation of ternary compounds.

  3. Colored and transparent oxide thin films prepared by magnetron sputtering: the glass blower approach.

    PubMed

    Gil-Rostra, Jorge; Chaboy, Jesús; Yubero, Francisco; Vilajoana, Antoni; González-Elipe, Agustín R

    2013-03-01

    This work describes the reactive magnetron sputtering processing at room temperature of several mixed oxide MxSiyOz thin films (M: Fe, Ni, Co, Mo, W, Cu) intended for optical, coloring, and aesthetic applications. Specific colors can be selected by adjusting the plasma gas composition and the Si-M ratio in the magnetron target. The microstructure and chemistry of the films are characterized by a large variety of techniques including X-ray photoemission spectroscopy, X-ray absorption spectroscopy (XAS), and infrared spectroscopy, while their optical properties are characterized by UV-vis transmission and reflection analysis. Particularly, XAS analysis of the M cations in the amorphous thin films has provided valuable information about their chemical state and local structure. It is concluded that the M cations are randomly distributed within the SiO2 matrix and that both the M concentration and its chemical state are the key parameters to control the final color of the films.

  4. Phase transitions from semiconductive amorphous to conductive polycrystalline in indium silicon oxide thin films

    NASA Astrophysics Data System (ADS)

    Mitoma, Nobuhiko; Da, Bo; Yoshikawa, Hideki; Nabatame, Toshihide; Takahashi, Makoto; Ito, Kazuhiro; Kizu, Takio; Fujiwara, Akihiko; Tsukagoshi, Kazuhito

    2016-11-01

    The enhancement in electrical conductivity and optical transparency induced by a phase transition from amorphous to polycrystalline in lightly silicon-doped indium oxide (InSiO) thin films is studied. The phase transition caused by simple thermal annealing transforms the InSiO thin films from semiconductors to conductors. Silicon atoms form SiO4 tetrahedra in InSiO, which enhances the overlap of In 5s orbitals as a result of the distortion of InO6 octahedral networks. Desorption of weakly bonded oxygen releases electrons from deep subgap states and enhances the electrical conductivity and optical transparency of the films. Optical absorption and X-ray photoelectron spectroscopy measurements reveal that the phase transition causes a Fermi energy shift of ˜0.2 eV.

  5. Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

    NASA Astrophysics Data System (ADS)

    Sarath Kumar, S. R.; Abutaha, Anas I.; Hedhili, M. N.; Alshareef, H. N.

    2012-01-01

    The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258-133 S cm-1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8-3.2 me), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.

  6. Hall mobility of cuprous oxide thin films deposited by reactive direct-current magnetron sputtering

    SciTech Connect

    Lee, Yun Seog; Winkler, Mark T.; Siah, Sin Cheng; Brandt, Riley; Buonassisi, Tonio

    2011-05-09

    Cuprous oxide (Cu{sub 2}O) is a promising earth-abundant semiconductor for photovoltaic applications. We report Hall mobilities of polycrystalline Cu{sub 2}O thin films deposited by reactive dc magnetron sputtering. High substrate growth temperature enhances film grain structure and Hall mobility. Temperature-dependent Hall mobilities measured on these films are comparable to monocrystalline Cu{sub 2}O at temperatures above 250 K, reaching 62 cm{sup 2}/V s at room temperature. At lower temperatures, the Hall mobility appears limited by carrier scattering from ionized centers. These observations indicate that sputtered Cu{sub 2}O films at high substrate growth temperature may be suitable for thin-film photovoltaic applications.

  7. Crack density and electrical resistance in indium-tin-oxide/polymer thin films under cyclic loading

    NASA Astrophysics Data System (ADS)

    Mora, Angel; Khan, Kamran A.; El Sayed, Tamer

    2014-11-01

    Here, we propose a damage model that describes the degradation of the material properties of indium-tin-oxide (ITO) thin films deposited on polymer substrates under cyclic loading. We base this model on our earlier tensile test model and show that the new model is suitable for cyclic loading. After calibration with experimental data, we are able to capture the stress-strain behavior and changes in electrical resistance of ITO thin films. We are also able to predict the crack density using calibrations from our previous model. Finally, we demonstrate the capabilities of our model based on simulations using material properties reported in the literature. Our model is implemented in the commercially available finite element software ABAQUS using a user subroutine UMAT. [Figure not available: see fulltext.

  8. Polymer waveguide sensor with tin oxide thin film integrated onto optical-electrical printed circuit board

    NASA Astrophysics Data System (ADS)

    Lim, Jung Woon; Kim, Seon Hoon; Kim, Jong-Sup; Kim, Jeong Ho; Kim, Yune Hyoun; Lim, Ju Young; Im, Young-Eun; Park, Jong Bok; Hann, Swook

    2014-05-01

    In this study, we proposed and fabricated optical sensor module integrated onto optical-electrical printed circuit board (PCB) for gas detection based on polymer waveguide with tin oxide thin film. Their potential application as gas sensors are confirmed through computational simulation using the two dimensional finite-difference time-domain method (2DFDTD). Optical-electrical PCB was integrated into vertical cavity surface emitting laser (VCSEL), photodiode and polymeric sensing device was fabricated by the nano-imprint lithography technique. SnO2 thin film of 100nm thickness was placed on the surface of core layer exposed by removing the specific area of the upper cladding layer of 300 μm length and 50 μm width. The performance of the device was measured experimentally. Initial study on the sensor performance for carbon monoxide gas detection indicated good sensitivity.

  9. Chemical vapor deposition and atomic layer deposition of metal oxide and nitride thin films

    NASA Astrophysics Data System (ADS)

    Barton, Jeffrey Thomas

    Processes for depositing thin films with various electronic, optical, mechanical, and chemical properties are indispensable in many industries today. Of the many deposition methods available, chemical vapor deposition (CVD) has proved over time to be one of the most flexible, efficient, and cost-effective. Atomic layer deposition (ALD) is a newer process that is gaining favor as a method for depositing films with excellent properties and unparalleled precision. This work describes the development of novel CVD and ALD processes to deposit a variety of materials. Hafnium oxide and zirconium oxide show promise as replacements for SiO 2 as gate dielectrics in future-generation transistors. These high-k materials would provide sufficient capacitance with layers thick enough to avoid leakage from tunneling. An ALD method is presented here for depositing conformal hafnium oxide from tetrakis-(diethylamido)hafnium and oxygen gas. A CVD method for depositing zirconium oxide from tetrakis-(dialkylamido)zirconium and either oxygen gas or water vapor is also described. The use of copper for interconnects in integrated circuits requires improved diffusion barrier materials, given its high diffusivity compared to the previously-used aluminum and tungsten. Tungsten nitride has a low resistivity among barrier materials, and can be deposited in amorphous films that are effective diffusion barriers in layers as thin as a few nanometers. Here we demonstrate CVD and plasma-enhanced CVD methods to deposit tungsten nitride films from bis-(dialkylamido)bis-( tert-butylimido)tungsten precursors and ammonia gas. Recent findings had shown uniform copper growth on tantalum silicate films, without the dewetting that usually occurs on oxide surfaces. Tantalum and tungsten silicates were deposited by a CVD reaction from the reaction of either tris-(diethylamido)ethylimido tantalum or bis-(ethylmethylamido)-bis-( tert-butylimido)tungsten with tris-(tert-butoxy)silanol. The ability of evaporated

  10. Effect of Polyaniline additions on structural and gas sensing behaviour of metal oxides thin films

    NASA Astrophysics Data System (ADS)

    Hj. Jumali, Mohammad H.; Izzuddin, Izura; Ramli, Norhashimah; Mat Salleh, Muhamad; Yahaya, Muhammad

    2009-07-01

    The structural and gas sensing behaviour of metal oxides namely TiO2 and ZnO thin films were investigated. In this paper, commercial Polyaniline (PANi) powder were added into two different metal oxides sol gel solutions with PANi : metal oxides weight ratios of 1wt.%, 2wt.% and 3wt.%. The thin films were fabricated using spin coating technique. Structural investigation using XRD presented that all films exhibited amorphous structure. Typical films surface morphology consists of agglomerated round shaped particles with the particles size varies between 57nm to 200nm. Addition of PANi formed network chains between the particles. Ethanol vapor detection test conducted at room temperature showed that both TiO2 and ZnO based films were capable to sense the vapor. The optimum ratio in sensing ethanol vapour for both PANi-TiO2 and PANi-ZnO films was 3:1. However, other issues such as reliability, selectability and repeatability remain as the major problems.

  11. Perpendicular magnetic anisotropy in thin ferromagnetic films adjacent to high-k oxides

    NASA Astrophysics Data System (ADS)

    Xu, Meng; Bi, Chong; Rosales, Marcus; Newhouse-Illige, Ty; Almasi, Hamid; Wang, Weigang

    2015-03-01

    Perpendicular magnetic anisotropy (PMA) in thin ferromagnetic films has attracted a great deal of attention due to interesting physics and promising application in spintronic devices. The strength of PMA is often found to be strongly influenced by the adjacent heavy metal layer and oxide layer. A strong interest has emerged recently to control the PMA of these ultra-thin films by electric fields. Here we report the fabrication and characterization of perpendicularly magnetized 3d transitional metal films next to high-k oxides such as HfO2 and ZrO2. We have investigated structural, magnetic and transport properties of these films. The PMA strongly depends on the thickness of the ferromagnetic layers and the interfacial oxidation level of the bilayers. We will also discuss electric field controlled magnetic properties in these systems. This work was supported in part by NSF (ECCS-1310338) and by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.

  12. Optical, structural and electrochromic properties of sputter- deposited W-Mo oxide thin films

    NASA Astrophysics Data System (ADS)

    Gesheva, K.; Arvizu, M. A.; Bodurov, G.; Ivanova, T.; Niklasson, G. A.; Iliev, M.; Vlakhov, T.; Terzijska, P.; Popkirov, G.; Abrashev, M.; Boyadjiev, S.; Jágerszki, G.; Szilágyi, I. M.; Marinov, Y.

    2016-10-01

    Thin metal oxide films were investigated by a series of characterization techniques including impedance spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, and Atomic Force Microscopy. Thin film deposition by reactive DC magnetron sputtering was performed at the Ångström Laboratory. W and Mo targets (5 cm diameter) and various oxygen gas flows were employed to prepare samples with different properties, whereas the gas pressure was kept constant at about 30 mTorr. The substrates were 5×5 cm2 plates of unheated glass pre-coated with ITO having a resistance of 40 ohm/sq. Film thicknesses were around 300 nm as determined by surface profilometry. Newly acquired equipment was used to study optical spectra, optoelectronic properties, and film structure. Films of WO3 and of mixed W- Mo oxide with three compositions showed coloring and bleaching under the application of a small voltage. Cyclic voltammograms were recorded with a scan rate of 5 mV s-1. Ellipsometric data for the optical constants show dependence on the amount of MoOx in the chemical composition. Single MoOx film, and the mixed one with only 8% MoOx have the highest value of refractive index, and similar dispersion in the visible spectral range. Raman spectra displayed strong lines at wavenumbers between 780 cm-1 and 950 cm-1 related to stretching vibrations of WO3, and MoO3. AFM gave evidence for domains of different composition in mixed W-Mo oxide films.

  13. On the thermal stability of physical vapor deposited oxide-hardened nanocrystalline gold thin films

    DOE PAGES

    Argibay, Nicolas; Mogonye, J. E.; Michael, Joseph R.; ...

    2015-04-08

    We describe a correlation between electrical resistivity and grain size for PVD synthesized polycrystalline oxide-hardened metal-matrix thin films in oxide-dilute (<5 vol. % oxide phase) compositions. The correlation is based on the Mayadas-Shatzkes (M-S) electron scattering model, predictive of grain size evolution as a function of composition in the oxide-dilute regime for 2 μm thick Au-ZnO films. We describe a technique to investigate grain boundary (GB) mobility and the thermal stability of GBs based on in situelectrical resistivity measurements during annealing experiments, interpreted using a combination of the M-S model and the Michels et al. model describing solute drag stabilizedmore » grain growth kinetics. Using this technique, activation energy and pre-exponential Arrhenius parameter values of Ea = 21.6 kJ/mol and Ao = 2.3 × 10-17 m2/s for Au-1 vol. % ZnO and Ea =12.7 kJ/mol and Ao = 3.1 × 10-18 m2/s for Au-2 vol.% ZnO were determined. In the oxide-dilute regime, the grain size reduction of the Au matrix yielded a maximum hardness of 2.6 GPa for 5 vol. % ZnO. A combined model including percolation behavior and grain refinement is presented that accurately describes the composition dependent change in electrical resistivity throughout the entire composition range for Au-ZnO thin films. As a result, the proposed correlations are supported by microstructural characterization using transmission electron microscopy and electron diffraction mapping for grain size determination.« less

  14. On the thermal stability of physical vapor deposited oxide-hardened nanocrystalline gold thin films

    NASA Astrophysics Data System (ADS)

    Argibay, N.; Mogonye, J. E.; Michael, J. R.; Goeke, R. S.; Kotula, P. G.; Scharf, T. W.; Dugger, M. T.; Prasad, S. V.

    2015-04-01

    We describe a correlation between electrical resistivity and grain size for PVD synthesized polycrystalline oxide-hardened metal-matrix thin films in oxide-dilute (<5 vol. % oxide phase) compositions. The correlation is based on the Mayadas-Shatzkes (M-S) electron scattering model, predictive of grain size evolution as a function of composition in the oxide-dilute regime for 2 μm thick Au-ZnO films. We describe a technique to investigate grain boundary (GB) mobility and the thermal stability of GBs based on in situ electrical resistivity measurements during annealing experiments, interpreted using a combination of the M-S model and the Michels et al. model describing solute drag stabilized grain growth kinetics. Using this technique, activation energy and pre-exponential Arrhenius parameter values of Ea = 21.6 kJ/mol and Ao = 2.3 × 10-17 m2/s for Au-1 vol. % ZnO and Ea = 12.7 kJ/mol and Ao = 3.1 × 10-18 m2/s for Au-2 vol. % ZnO were determined. In the oxide-dilute regime, the grain size reduction of the Au matrix yielded a maximum hardness of 2.6 GPa for 5 vol. % ZnO. A combined model including percolation behavior and grain refinement is presented that accurately describes the composition dependent change in electrical resistivity throughout the entire composition range for Au-ZnO thin films. The proposed correlations are supported by microstructural characterization using transmission electron microscopy and electron diffraction mapping for grain size determination.

  15. On the thermal stability of physical vapor deposited oxide-hardened nanocrystalline gold thin films

    SciTech Connect

    Argibay, N. Mogonye, J. E.; Michael, J. R.; Goeke, R. S.; Kotula, P. G.; Scharf, T. W.; Dugger, M. T.; Prasad, S. V.

    2015-04-14

    We describe a correlation between electrical resistivity and grain size for PVD synthesized polycrystalline oxide-hardened metal-matrix thin films in oxide-dilute (<5 vol. % oxide phase) compositions. The correlation is based on the Mayadas-Shatzkes (M-S) electron scattering model, predictive of grain size evolution as a function of composition in the oxide-dilute regime for 2 μm thick Au-ZnO films. We describe a technique to investigate grain boundary (GB) mobility and the thermal stability of GBs based on in situ electrical resistivity measurements during annealing experiments, interpreted using a combination of the M-S model and the Michels et al. model describing solute drag stabilized grain growth kinetics. Using this technique, activation energy and pre-exponential Arrhenius parameter values of E{sub a} = 21.6 kJ/mol and A{sub o} = 2.3 × 10{sup −17} m{sup 2}/s for Au-1 vol. % ZnO and E{sub a} = 12.7 kJ/mol and A{sub o} = 3.1 × 10{sup −18} m{sup 2}/s for Au-2 vol. % ZnO were determined. In the oxide-dilute regime, the grain size reduction of the Au matrix yielded a maximum hardness of 2.6 GPa for 5 vol. % ZnO. A combined model including percolation behavior and grain refinement is presented that accurately describes the composition dependent change in electrical resistivity throughout the entire composition range for Au-ZnO thin films. The proposed correlations are supported by microstructural characterization using transmission electron microscopy and electron diffraction mapping for grain size determination.

  16. On the thermal stability of physical vapor deposited oxide-hardened nanocrystalline gold thin films

    SciTech Connect

    Argibay, Nicolas; Mogonye, J. E.; Michael, Joseph R.; Goeke, Ronald S.; Kotula, Paul G.; Scharf, T. W.; Dugger, Michael Thomas; Prasad, Somuri V.

    2015-04-08

    We describe a correlation between electrical resistivity and grain size for PVD synthesized polycrystalline oxide-hardened metal-matrix thin films in oxide-dilute (<5 vol. % oxide phase) compositions. The correlation is based on the Mayadas-Shatzkes (M-S) electron scattering model, predictive of grain size evolution as a function of composition in the oxide-dilute regime for 2 μm thick Au-ZnO films. We describe a technique to investigate grain boundary (GB) mobility and the thermal stability of GBs based on in situelectrical resistivity measurements during annealing experiments, interpreted using a combination of the M-S model and the Michels et al. model describing solute drag stabilized grain growth kinetics. Using this technique, activation energy and pre-exponential Arrhenius parameter values of Ea = 21.6 kJ/mol and Ao = 2.3 × 10-17 m2/s for Au-1 vol. % ZnO and Ea =12.7 kJ/mol and Ao = 3.1 × 10-18 m2/s for Au-2 vol.% ZnO were determined. In the oxide-dilute regime, the grain size reduction of the Au matrix yielded a maximum hardness of 2.6 GPa for 5 vol. % ZnO. A combined model including percolation behavior and grain refinement is presented that accurately describes the composition dependent change in electrical resistivity throughout the entire composition range for Au-ZnO thin films. As a result, the proposed correlations are supported by microstructural characterization using transmission electron microscopy and electron diffraction mapping for grain size determination.

  17. Indium oxide thin film as potential photoanodes for corrosion protection of stainless steel under visible light

    SciTech Connect

    Zhang, Yan; Yu, Jianqiang; Sun, Kai; Zhu, Yukun; Bu, Yuyu; Chen, Zhuoyuan

    2014-05-01

    Graphical abstract: If the conduction band potential of In{sub 2}O{sub 3} is more negative than the corrosion potential of stainless steel, photo-induced electrons will be transferred from In{sub 2}O{sub 3} to the steel, thus shifting the potential of the steel into a corrosion immunity region and preventing the steel from the corrosion. - Highlights: • Indium oxide performed novel application under visible light. • Indium oxide by sol–gel method behaved better photoelectrochemical properties. • Electrons were transferred to stainless steel from indium oxide once light on. - Abstract: This paper reports the photoelectrochemical cathodic protection of 304 stainless steel by In{sub 2}O{sub 3} thin-film under visible-light. The films were fabricated with In{sub 2}O{sub 3} powders, synthesized by both sol–gel (In{sub 2}O{sub 3}-sg) and solid-state (In{sub 2}O{sub 3}-ss) processes. The photo-induced open circuit potential and the photo-to-current efficiency measurements suggested that In{sub 2}O{sub 3} could be a promising candidate material for photoelectrochemical cathodic protection of metallic alloys under visible light. Moreover, the polarization curve experimental results indicated that In{sub 2}O{sub 3}-sg thin-film can mitigate the corrosion potential of 304 stainless steel to much more negative values with a higher photocurrent density than the In{sub 2}O{sub 3}-ss film under visible-light illumination. All the results demonstrated that the In{sub 2}O{sub 3}-sg thin-film provides a better photoelectrochemical cathodic protection for 304 stainless steel than In{sub 2}O{sub 3}-ss thin-film under visible-light illumination. The higher photoelectrochemical efficiency is possibly due to the uniform thin films produced with the smaller particle size of In{sub 2}O{sub 3}-sg, which facilitates the transfer of the photo-induced electrons from bulk to the surface and suppresses the charge recombination of the electrons and holes.

  18. Pulsed laser deposited metal oxide thin films mediated controlled adsorption of proteins

    NASA Astrophysics Data System (ADS)

    Kim, Se Jin

    Several metal oxide thin films were grown on Si substrate by pulsed laser deposition for controlling adsorption of proteins. No intentional heating of substrate and introduction of oxygen gas during growth were employed. Additionally, fibrinogen, bovine serum albumin (BSA), and lysozyme were used as model protein in this study. The film properties such as cyratllinity, surface roughness, surface electrical charge and chemistry were investigated by many techniques in order to obtain the relationship with protein adsorption. Firstly, as grown Ta2O5 and ZnO thin film were used to study the effects of surface charge on the behaviors of BSA and lysozyme adsorption. The protein thickness results by ellipsometry showed that negatively charged Ta2O5 had a stronger affinity to positively charged lysozyme, while positively charged ZnO had a stronger affinity to negatively charged BSA. The results confirmed electrostatic interaction due to surface charge is one of main factors for determining adsorption of proteins. Furthermore, annealing studies were performed by heat treatment of as grown Ta2O5 and ZnO at 800°C in air ambience. Annealed Ta2O5 thin film had almost wetting property (from 10.02° to less than 1˜2°) and the change of cystallinity (from amorphous to cyrsalline) while annealed ZnO thin film had a reduced contact angle (from 75.65° to 39.41°) and remained to crystalline structure. The fibrinogen thickness on annealed Ta2O5 film was increased compared with as grown sample, while heat treated ZnO film showed much reduction of fibrinogen adsorption. Binary Ta-Zn oxide thin films (TZ) were grown by preparing PLD target composed of 50 wt% Ta2O5 and 50 wt% ZnO. This binary film had IEP pH 7.1 indicating nearly neutral charge in pH 7.4 PBS solution, and hydrophilic property. Ellipsometrical results showed that TZ film had the lowest fibrinogen, BSA and lysozyme thickness after 120 min adsorption compared with Ta2O5 and ZnO. Other samples, bilayer oxide films in

  19. Oxidative degradation of acid orange 7 using Ag-doped zinc oxide thin films.

    PubMed

    Shinde, S S; Bhosale, C H; Rajpure, K Y

    2012-12-05

    Ag-doped ZnO thin films with preferred c-axis orientation along (002) have been prepared by spray pyrolysis technique in aqueous medium on to the corning glass substrates. The effect of Ag-doping on to the photoelectrochemical, structural, morphological, optical, luminescence, electrical and thermal properties has been investigated. XRD and Raman study indicates that the films have hexagonal (wurtzite) crystal structure. The effect of Ag loading on the photocatalytic activity of Ag-doped ZnO in the degradation of azo dye is studied and results are compared with pure ZnO. The results show that the rate of degradation of azo dye over Ag-doped ZnO is much higher as compared to pure ZnO. Ag doping in ZnO is highly effective and can significantly enhance the photocatalytic degradation and mineralization of azo dye. The enhancement of photocatalytic activity of Ag-doped ZnO thin films is mainly due to their smaller crystallite size and capability for reducing the electron-hole pair recombination. Kinetic parameters have been investigated in terms of a first order rate equation. The rate constant (-k) for this heterogeneous photocatalysis is evaluated as a function of the initial concentration of original species. Substantial reduction in azo dye is achieved as analyzed from COD and TOC studies.

  20. Chromium coatings to reduce radiation buildup. Final report

    SciTech Connect

    Galbraith, G.T.; Asay, R.H.; Asay, D.J.

    1995-12-01

    For the past several years, the Electric Power Research Institute (EPRI) has been intensively investigating new methods to mitigate radiation buildup on out-of-core surfaces in light water reactors to reduce occupational radiation exposure. As a result of this work, a new surface preconditioning method termed stabilized chromium has been developed for pretreatment of reactor piping and other components. This treatment method has been shown to be highly effective in retarding radiation buildup. Initial coupon tests of stabilized chromium treatment, an EPRI patented process, showed very favorable results. EPRI is now sponsoring additional development and testing of this preconditioning technique. The specific goals of this project were to investigate the effects of various chromium plating bath compositions, define acceptable chromium plating parameters, and demonstrate the benefit of stabilized chromium treatment by preconditioning actual plant components. Presently, two steam generator manway diaphragms installed at Millstone-2 have been treated with stabilized chromium and are being exposed to primary coolant. After exposure for one fuel cycle the stabilized chromium surfaces had approximately ten times less activity buildup than electropolished-only reference surfaces. Two pipes in the residual heat removal system of Diablo Canyon Unit 2 have also been treated with stabilized and non-stabilized chromium. Initial gamma spectroscopy measurements of these pipes showed the pipe treated with stabilized chromium had the lowest activity buildup. Additional tests of stabilized and non-stabilized chromium films applied to coupon specimens were also conducted at the Doel-2 reactor to evaluate the effect of chromium film thickness on activity buildup. These tests showed thin stabilized chromium films (ca. 3,000 {angstrom}) to be highly effective in retarding activity buildup with reduction factors ranging from 100--150 in comparison to electropolished-only coupons.