Effect of dislocations on the open-circuit voltage, short-circuit current and efficiency of heteroepitaxial indium phosphide solar cells

NASA Technical Reports Server (NTRS)

Jain, Raj K.; Flood, Dennis J.

1990-01-01

Excellent radiation resistance of indium phosphide solar cells makes them a promising candidate for space power applications, but the present high cost of starting substrates may inhibit their large scale use. Thin film indium phosphide cells grown on Si or GaAs substrates have exhibited low efficiencies, because of the generation and propagation of large number of dislocations. Dislocation densities were calculated and its influence on the open circuit voltage, short circuit current, and efficiency of heteroepitaxial indium phosphide cells was studied using the PC-1D. Dislocations act as predominant recombination centers and are required to be controlled by proper transition layers and improved growth techniques. It is shown that heteroepitaxial grown cells could achieve efficiencies in excess of 18 percent AMO by controlling the number of dislocations. The effect of emitter thickness and surface recombination velocity on the cell performance parameters vs. dislocation density is also studied.

11.4% Efficiency non-fullerene polymer solar cells with trialkylsilyl substituted 2D-conjugated polymer as donor

PubMed Central

Bin, Haijun; Gao, Liang; Zhang, Zhi-Guo; Yang, Yankang; Zhang, Yindong; Zhang, Chunfeng; Chen, Shanshan; Xue, Lingwei; Yang, Changduk; Xiao, Min; Li, Yongfang

2016-01-01

Simutaneously high open circuit voltage and high short circuit current density is a big challenge for achieving high efficiency polymer solar cells due to the excitonic nature of organic semdonductors. Herein, we developed a trialkylsilyl substituted 2D-conjugated polymer with the highest occupied molecular orbital level down-shifted by Si–C bond interaction. The polymer solar cells obtained by pairing this polymer with a non-fullerene acceptor demonstrated a high power conversion efficiency of 11.41% with both high open circuit voltage of 0.94 V and high short circuit current density of 17.32 mA cm−2 benefitted from the complementary absorption of the donor and acceptor, and the high hole transfer efficiency from acceptor to donor although the highest occupied molecular orbital level difference between the donor and acceptor is only 0.11 eV. The results indicate that the alkylsilyl substitution is an effective way in designing high performance conjugated polymer photovoltaic materials. PMID:27905397

11.4% Efficiency non-fullerene polymer solar cells with trialkylsilyl substituted 2D-conjugated polymer as donor.

PubMed

Bin, Haijun; Gao, Liang; Zhang, Zhi-Guo; Yang, Yankang; Zhang, Yindong; Zhang, Chunfeng; Chen, Shanshan; Xue, Lingwei; Yang, Changduk; Xiao, Min; Li, Yongfang

2016-12-01

Simutaneously high open circuit voltage and high short circuit current density is a big challenge for achieving high efficiency polymer solar cells due to the excitonic nature of organic semdonductors. Herein, we developed a trialkylsilyl substituted 2D-conjugated polymer with the highest occupied molecular orbital level down-shifted by Si-C bond interaction. The polymer solar cells obtained by pairing this polymer with a non-fullerene acceptor demonstrated a high power conversion efficiency of 11.41% with both high open circuit voltage of 0.94 V and high short circuit current density of 17.32 mA cm -2 benefitted from the complementary absorption of the donor and acceptor, and the high hole transfer efficiency from acceptor to donor although the highest occupied molecular orbital level difference between the donor and acceptor is only 0.11 eV. The results indicate that the alkylsilyl substitution is an effective way in designing high performance conjugated polymer photovoltaic materials.

Effects on Organic Photovoltaics Using Femtosecond-Laser-Treated Indium Tin Oxides.

PubMed

Chen, Mei-Hsin; Tseng, Ya-Hsin; Chao, Yi-Ping; Tseng, Sheng-Yang; Lin, Zong-Rong; Chu, Hui-Hsin; Chang, Jan-Kai; Luo, Chih-Wei

2016-09-28

The effects of femtosecond-laser-induced periodic surface structures (LIPSS) on an indium tin oxide (ITO) surface applied to an organic photovoltaic (OPV) system were investigated. The modifications of ITO induced by LIPPS in OPV devices result in more than 14% increase in power conversion efficiency (PCE) and short-circuit current density relative to those of the standard device. The basic mechanisms for the enhanced short-circuit current density are attributed to better light harvesting, increased scattering effects, and more efficient charge collection between the ITO and photoactive layers. Results show that higher PCEs would be achieved by laser-pulse-treated electrodes.

Using high haze (> 90%) light-trapping film to enhance the efficiency of a-Si:H solar cells

NASA Astrophysics Data System (ADS)

Chu, Wei-Ping; Lin, Jian-Shian; Lin, Tien-Chai; Tsai, Yu-Sheng; Kuo, Chen-Wei; Chung, Ming-Hua; Hsieh, Tsung-Eong; Liu, Lung-Chang; Juang, Fuh-Shyang; Chen, Nien-Po

2012-07-01

The high haze light-trapping (LT) film offers enhanced scattering of light and is applied to a-Si:H solar cells. UV glue was spin coated on glass, and then the LT pattern was imprinted. Finally, a UV lamp was used to cure the UV glue on the glass. The LT film effectively increased the Haze ratio of glass and decreased the reflectance of a-Si:H solar cells. Therefore, the photon path length was increased to obtain maximum absorption by the absorber layer. High Haze LT film is able to enhance short circuit current density and efficiency of the device, as partial composite film generates broader scattering light, thereby causing shorter wave length light to be absorbed by the P layer so that the short circuit current density decreases. In case of lab-made a-Si:H thin film solar cells with v-shaped LT films, superior optoelectronic performances have been found (Voc = 0.74 V, Jsc = 15.62 mA/cm2, F.F. = 70%, and η = 8.09%). We observed ~ 35% enhancement of the short-circuit current density and ~ 31% enhancement of the conversion efficiency.

Extra-high short-circuit current for bifacial solar cells in sunny and dark-light conditions.

PubMed

Duan, Jialong; Duan, Yanyan; Zhao, Yuanyuan; He, Benlin; Tang, Qunwei

2017-09-05

We present here a symmetrically structured bifacial solar cell tailored by two fluorescent photoanodes and a platinum/titanium/platinum counter electrode, yielding extra-high short-circuit current densities as high as 28.59 mA cm -2 and 119.9 μA cm -2 in simulated sunlight irradiation (100 mW cm -2 , AM1.5) and dark-light conditions, respectively.

PCB-level Electro thermal Coupling Simulation Analysis

NASA Astrophysics Data System (ADS)

Zhou, Runjing; Shao, Xuchen

2017-10-01

Power transmission network needs to transmit more current with the increase of the power density. The problem of temperature rise and the reliability is becoming more and more serious. In order to accurately design the power supply system, we must consider the influence of the power supply system including Joule heat, air convection and other factors. Therefore, this paper analyzes the relationship between the electric circuit and the thermal circuit on the basis of the theory of electric circuit and thermal circuit.

Full circuit calculation for electromagnetic pulse transmission in a high current facility

NASA Astrophysics Data System (ADS)

Zou, Wenkang; Guo, Fan; Chen, Lin; Song, Shengyi; Wang, Meng; Xie, Weiping; Deng, Jianjun

2014-11-01

We describe herein for the first time a full circuit model for electromagnetic pulse transmission in the Primary Test Stand (PTS)—the first TW class pulsed power driver in China. The PTS is designed to generate 8-10 MA current into a z -pinch load in nearly 90 ns rise time for inertial confinement fusion and other high energy density physics research. The PTS facility has four conical magnetic insulation transmission lines, in which electron current loss exists during the establishment of magnetic insulation. At the same time, equivalent resistance of switches and equivalent inductance of pinch changes with time. However, none of these models are included in a commercially developed circuit code so far. Therefore, in order to characterize the electromagnetic transmission process in the PTS, a full circuit model, in which switch resistance, magnetic insulation transmission line current loss and a time-dependent load can be taken into account, was developed. Circuit topology and an equivalent circuit model of the facility were introduced. Pulse transmission calculation of shot 0057 was demonstrated with the corresponding code FAST (full-circuit analysis and simulation tool) by setting controllable parameters the same as in the experiment. Preliminary full circuit simulation results for electromagnetic pulse transmission to the load are presented. Although divergences exist between calculated and experimentally obtained waveforms before the vacuum section, consistency with load current is satisfactory, especially at the rising edge.

Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2

NASA Astrophysics Data System (ADS)

Encomendero, Jimy; Yan, Rusen; Verma, Amit; Islam, S. M.; Protasenko, Vladimir; Rouvimov, Sergei; Fay, Patrick; Jena, Debdeep; Xing, Huili Grace

2018-03-01

We report the generation of room temperature microwave oscillations from GaN/AlN resonant tunneling diodes, which exhibit record-high peak current densities. The tunneling heterostructure grown by molecular beam epitaxy on freestanding GaN substrates comprises a thin GaN quantum well embedded between two AlN tunneling barriers. The room temperature current-voltage characteristics exhibit a record-high maximum peak current density of ˜220 kA/cm2. When biased within the negative differential conductance region, microwave oscillations are measured with a fundamental frequency of ˜0.94 GHz, generating an output power of ˜3.0 μW. Both the fundamental frequency and the output power of the oscillator are limited by the external biasing circuit. Using a small-signal equivalent circuit model, the maximum intrinsic frequency of oscillation for these diodes is predicted to be ˜200 GHz. This work represents a significant step towards microwave power generation enabled by resonant tunneling transport, an ultra-fast process that goes beyond the limitations of current III-Nitride high electron mobility transistors.

Effects of the unintentional background concentration, indium composition and defect density on the performance of InGaN p-i-n homojunction solar cells

NASA Astrophysics Data System (ADS)

Wu, Shudong; Cheng, Liwen; Wang, Qiang

2018-07-01

We theoretically investigate the effects of the unintentional background concentration, indium composition and defect density of intrinsic layer (i-layer) on the photovoltaic performance of InGaN p-i-n homojunction solar cells by solving the Poisson and steady-state continuity equations. The built-in electric field and carrier generation rate depend on the position within the i-layer. The collection efficiency, short circuit current density, open circuit voltage, fill factor, and conversion efficiency are found to depend strongly on the background concentration, thickness, indium composition, and defect density of the i-layer. With increasing the background concentration, the maximum thickness of field-bearing i-layer decreases, and the width of depletion region may become even too small to cover the whole i-layer, resulting in a serious decrease of the carrier collection. Some oscillations as a function of indium composition are found in the short circuit current density and conversion efficiency at high indium composition and low defect density due to the interference between the absorbance and the generation rate of carriers. The defect density degrades seriously the overall photovoltaic performance, and its effect on the photovoltaic performance is roughly seven orders of magnitude higher than the previously reported values [Feng et al., J. Appl. Phys. 108 (2010) 093118]. As a result, the high crystalline quality InGaN with high indium composition is a key factor in the device performance of III-nitride based solar cells.

Multi-species genetic connectivity in a terrestrial habitat network.

PubMed

Marrotte, Robby R; Bowman, Jeff; Brown, Michael G C; Cordes, Chad; Morris, Kimberley Y; Prentice, Melanie B; Wilson, Paul J

2017-01-01

Habitat fragmentation reduces genetic connectivity for multiple species, yet conservation efforts tend to rely heavily on single-species connectivity estimates to inform land-use planning. Such conservation activities may benefit from multi-species connectivity estimates, which provide a simple and practical means to mitigate the effects of habitat fragmentation for a larger number of species. To test the validity of a multi-species connectivity model, we used neutral microsatellite genetic datasets of Canada lynx ( Lynx canadensis ), American marten ( Martes americana ), fisher ( Pekania pennanti ), and southern flying squirrel ( Glaucomys volans ) to evaluate multi-species genetic connectivity across Ontario, Canada. We used linear models to compare node-based estimates of genetic connectivity for each species to point-based estimates of landscape connectivity (current density) derived from circuit theory. To our knowledge, we are the first to evaluate current density as a measure of genetic connectivity. Our results depended on landscape context: habitat amount was more important than current density in explaining multi-species genetic connectivity in the northern part of our study area, where habitat was abundant and fragmentation was low. In the south however, where fragmentation was prevalent, genetic connectivity was correlated with current density. Contrary to our expectations however, locations with a high probability of movement as reflected by high current density were negatively associated with gene flow. Subsequent analyses of circuit theory outputs showed that high current density was also associated with high effective resistance, underscoring that the presence of pinch points is not necessarily indicative of gene flow. Overall, our study appears to provide support for the hypothesis that landscape pattern is important when habitat amount is low. We also conclude that while current density is proportional to the probability of movement per unit area, this does not imply increased gene flow, since high current density tends to be a result of neighbouring pixels with high cost of movement (e.g., low habitat amount). In other words, pinch points with high current density appear to constrict gene flow.

Experimental investigation of localized stress-induced leakage current distribution in gate dielectrics using array test circuit

NASA Astrophysics Data System (ADS)

Park, Hyeonwoo; Teramoto, Akinobu; Kuroda, Rihito; Suwa, Tomoyuki; Sugawa, Shigetoshi

2018-04-01

Localized stress-induced leakage current (SILC) has become a major problem in the reliability of flash memories. To reduce it, clarifying the SILC mechanism is important, and statistical measurement and analysis have to be carried out. In this study, we applied an array test circuit that can measure the SILC distribution of more than 80,000 nMOSFETs with various gate areas at a high speed (within 80 s) and a high accuracy (on the 10-17 A current order). The results clarified that the distributions of localized SILC in different gate areas follow a universal distribution assuming the same SILC defect density distribution per unit area, and the current of localized SILC defects does not scale down with the gate area. Moreover, the distribution of SILC defect density and its dependence on the oxide field for measurement (E OX-Measure) were experimentally determined for fabricated devices.

Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes

DOE PAGES

Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; ...

2015-03-01

Current-voltage (IV) characteristics of two AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) with differing densities of open-core threading dislocations (nanopipes) are analyzed. A three-diode circuit is simulated to emulate the IV characteristics of the DUV-LEDs, but is only able to accurately model the lower leakage current, lower nanopipe density DUV-LED. It was found that current leakage through the nanopipes in these structures is rectifying, despite nanopipes being previously established as inherently n-type. Using defect-sensitive etching, the nanopipes are revealed to terminate within the p-type GaN capping layer of the DUV-LEDs. The circuit model is modified to account for another p-nmore » junction between the n-type nanopipes and the p-type GaN, and an excellent fit to the IV characteristics of the leaky DUV-LED is achieved.« less

Thermally oxidized titania nanotubes enhance the corrosion resistance of Ti6Al4V.

PubMed

Grotberg, John; Hamlekhan, Azhang; Butt, Arman; Patel, Sweetu; Royhman, Dmitry; Shokuhfar, Tolou; Sukotjo, Cortino; Takoudis, Christos; Mathew, Mathew T

2016-02-01

The negative impact of in vivo corrosion of metallic biomedical implants remains a complex problem in the medical field. We aimed to determine the effects of electrochemical anodization (60V, 2h) and thermal oxidation (600°C) on the corrosive behavior of Ti-6Al-4V, with serum proteins, at physiological temperature. Anodization produced a mixture of anatase and amorphous TiO2 nanopores and nanotubes, while the annealing process yielded an anatase/rutile mixture of TiO2 nanopores and nanotubes. The surface area was analyzed by the Brunauer-Emmett-Teller method and was estimated to be 3 orders of magnitude higher than that of polished control samples. Corrosion resistance was evaluated on the parameters of open circuit potential, corrosion potential, corrosion current density, passivation current density, polarization resistance and equivalent circuit modeling. Samples both anodized and thermally oxidized exhibited shifts of open circuit potential and corrosion potential in the noble direction, indicating a more stable nanoporous/nanotube layer, as well as lower corrosion current densities and passivation current densities than the smooth control. They also showed increased polarization resistance and diffusion limited charge transfer within the bulk oxide layer. The treatment groups studied can be ordered from greatest corrosion resistance to least as Anodized+Thermally Oxidized > Anodized > Smooth > Thermally Oxidized for the conditions investigated. This study concludes that anodized surface has a potential to prevent long term implant failure due to corrosion in a complex in-vivo environment. Copyright © 2015 Elsevier B.V. All rights reserved.

Influence of the axial magnetic field on sheath development after current zero in a vacuum circuit breaker

NASA Astrophysics Data System (ADS)

Chen, Yi; Yang, Fei; Sun, Hao; Wu, Yi; Niu, Chunping; Rong, Mingzhe

2017-06-01

After current zero, which is the moment when the vacuum circuit breaker interrupts a vacuum arc, sheath development is the first process in the dielectric recovery process. An axial magnetic field (AMF) is widely used in the vacuum circuit breaker when the high-current vacuum arc is interrupted. Therefore, it is very important to study the influence of different AMF amplitudes on the sheath development. The objective of this paper is to study the influence of different AMF amplitudes on the sheath development from a micro perspective. Thus, the particle in cell-Monte Carlo collisions (PIC-MCC) method was adopted to develop the sheath development model. We compared the simulation results with the experimental results and then validated the simulation. We also obtained the speed of the sheath development and the energy density of the ions under different AMF amplitudes. The results showed that the larger the AMF amplitudes are, the faster the sheath develops and the lower the ion energy density is, meaning the breakdown is correspondingly more difficult.

Molecular-Beam-Epitaxy Program

NASA Technical Reports Server (NTRS)

Sparks, Patricia D.

1988-01-01

Molecular Beam Epitaxy (MBE) computer program developed to aid in design of single- and double-junction cascade cells made of silicon. Cascade cell has efficiency 1 or 2 percent higher than single cell, with twice the open-circuit voltage. Input parameters include doping density, diffusion lengths, thicknesses of regions, solar spectrum, absorption coefficients of silicon (data included for 101 wavelengths), and surface recombination velocities. Results include maximum power, short-circuit current, and open-circuit voltage. Program written in FORTRAN IV.

3D Magnetic Field Analysis of a Turbine Generator Stator Core-end Region

NASA Astrophysics Data System (ADS)

Wakui, Shinichi; Takahashi, Kazuhiko; Ide, Kazumasa; Takahashi, Miyoshi; Watanabe, Takashi

In this paper we calculated magnetic flux density and eddy current distributions of a 71MVA turbine generator stator core-end using three-dimensional numerical magnetic field analysis. Subsequently, the magnetic flux densities and eddy current densities in the stator core-end region on the no-load and three-phase short circuit conditions obtained by the analysis have good agreements with the measurements. Furthermore, the differences of eddy current and eddy current loss in the stator core-end region for various load conditions are shown numerically. As a result, the facing had an effect that decrease the eddy current loss of the end plate about 84%.

Formation of BaSi2 heterojunction solar cells using transparent MoOx hole transport layers

NASA Astrophysics Data System (ADS)

Du, W.; Takabe, R.; Baba, M.; Takeuchi, H.; Hara, K. O.; Toko, K.; Usami, N.; Suemasu, T.

2015-03-01

Heterojunction solar cells that consist of 15 nm thick molybdenum trioxide (MoOx, x < 3) as a hole transport layer and 600 nm thick unpassivated or passivated n-BaSi2 layers were demonstrated. Rectifying current-voltage characteristics were observed when the surface of BaSi2 was exposed to air. When the exposure time was decreased to 1 min, an open circuit voltage of 200 mV and a short circuit current density of 0.5 mA/cm2 were obtained under AM1.5 illumination. The photocurrent density under a reverse bias voltage of -1 V reached 25 mA/cm2, which demonstrates the significant potential of BaSi2 for solar cell applications.

Electric control of emergent magnonic spin current and dynamic multiferroicity in magnetic insulators at finite temperatures

NASA Astrophysics Data System (ADS)

Wang, Xi-guang; Chotorlishvili, L.; Guo, Guang-hua; Berakdar, J.

2018-04-01

Conversion of thermal energy into magnonic spin currents and/or effective electric polarization promises new device functionalities. A versatile approach is presented here for generating and controlling open circuit magnonic spin currents and an effective multiferroicity at a uniform temperature with the aid of spatially inhomogeneous, external, static electric fields. This field applied to a ferromagnetic insulator with a Dzyaloshinskii-Moriya type coupling changes locally the magnon dispersion and modifies the density of thermally excited magnons in a region of the scale of the field inhomogeneity. The resulting gradient in the magnon density can be viewed as a gradient in the effective magnon temperature. This effective thermal gradient together with local magnon dispersion result in an open-circuit, electric field controlled magnonic spin current. In fact, for a moderate variation in the external electric field the predicted magnonic spin current is on the scale of the spin (Seebeck) current generated by a comparable external temperature gradient. Analytical methods supported by full-fledge numerics confirm that both, a finite temperature and an inhomogeneous electric field are necessary for this emergent non-equilibrium phenomena. The proposal can be integrated in magnonic and multiferroic circuits, for instance to convert heat into electrically controlled pure spin current using for example nanopatterning, without the need to generate large thermal gradients on the nanoscale.

Achieving 12.8% Efficiency by Simultaneously Improving Open-Circuit Voltage and Short-Circuit Current Density in Tandem Organic Solar Cells.

PubMed

Qin, Yunpeng; Chen, Yu; Cui, Yong; Zhang, Shaoqing; Yao, Huifeng; Huang, Jiang; Li, Wanning; Zheng, Zhong; Hou, Jianhui

2017-06-01

Tandem organic solar cells (TOSCs), which integrate multiple organic photovoltaic layers with complementary absorption in series, have been proved to be a strong contender in organic photovoltaic depending on their advantages in harvesting a greater part of the solar spectrum and more efficient photon utilization than traditional single-junction organic solar cells. However, simultaneously improving open circuit voltage (V oc ) and short current density (J sc ) is a still particularly tricky issue for highly efficient TOSCs. In this work, by employing the low-bandgap nonfullerene acceptor, IEICO, into the rear cell to extend absorption, and meanwhile introducing PBDD4T-2F into the front cell for improving V oc , an impressive efficiency of 12.8% has been achieved in well-designed TOSC. This result is also one of the highest efficiencies reported in state-of-the-art organic solar cells. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Passive fault current limiting device

DOEpatents

Evans, Daniel J.; Cha, Yung S.

1999-01-01

A passive current limiting device and isolator is particularly adapted for use at high power levels for limiting excessive currents in a circuit in a fault condition such as an electrical short. The current limiting device comprises a magnetic core wound with two magnetically opposed, parallel connected coils of copper, a high temperature superconductor or other electrically conducting material, and a fault element connected in series with one of the coils. Under normal operating conditions, the magnetic flux density produced by the two coils cancel each other. Under a fault condition, the fault element is triggered to cause an imbalance in the magnetic flux density between the two coils which results in an increase in the impedance in the coils. While the fault element may be a separate current limiter, switch, fuse, bimetal strip or the like, it preferably is a superconductor current limiter conducting one-half of the current load compared to the same limiter wired to carry the total current of the circuit. The major voltage during a fault condition is in the coils wound on the common core in a preferred embodiment.

Passive fault current limiting device

DOEpatents

Evans, D.J.; Cha, Y.S.

1999-04-06

A passive current limiting device and isolator is particularly adapted for use at high power levels for limiting excessive currents in a circuit in a fault condition such as an electrical short. The current limiting device comprises a magnetic core wound with two magnetically opposed, parallel connected coils of copper, a high temperature superconductor or other electrically conducting material, and a fault element connected in series with one of the coils. Under normal operating conditions, the magnetic flux density produced by the two coils cancel each other. Under a fault condition, the fault element is triggered to cause an imbalance in the magnetic flux density between the two coils which results in an increase in the impedance in the coils. While the fault element may be a separate current limiter, switch, fuse, bimetal strip or the like, it preferably is a superconductor current limiter conducting one-half of the current load compared to the same limiter wired to carry the total current of the circuit. The major voltage during a fault condition is in the coils wound on the common core in a preferred embodiment. 6 figs.

LDRD report: Smoke effects on electrical equipment

DOE Office of Scientific and Technical Information (OSTI.GOV)

TANAKA,TINA J.; BAYNES JR.,EDWARD E.; NOWLEN,STEVEN P.

2000-03-01

Smoke is known to cause electrical equipment failure, but the likelihood of immediate failure during a fire is unknown. Traditional failure assessment techniques measure the density of ionic contaminants deposited on surfaces to determine the need for cleaning or replacement of electronic equipment exposed to smoke. Such techniques focus on long-term effects, such as corrosion, but do not address the immediate effects of the fire. This document reports the results of tests on the immediate effects of smoke on electronic equipment. Various circuits and components were exposed to smoke from different fields in a static smoke exposure chamber and weremore » monitored throughout the exposure. Electrically, the loss of insulation resistance was the most important change caused by smoke. For direct current circuits, soot collected on high-voltage surfaces sometimes formed semi-conductive soot bridges that shorted the circuit. For high voltage alternating current circuits, the smoke also tended to increase the likelihood of arcing, but did not accumulate on the surfaces. Static random access memory chips failed for high levels of smoke, but hard disk drives did not. High humidity increased the conductive properties of the smoke. The conductivity does not increase linearly with smoke density as first proposed; however, it does increase with quantity. The data can be used to give a rough estimate of the amount of smoke that will cause failures in CMOS memory chips, dc and ac circuits. Comparisons of this data to other fire tests can be made through the optical and mass density measurements of the smoke.« less

CdS/p-Si solar cells made by serigraphy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garcia, F.J.; Ortiz-Conde, A.; Sa-Neto, A.

1988-04-11

CdS/p-Si solar cells have been fabricated depositing the CdS layer by serigraphy. Open circuit voltages of 538 mV, short circuit current densities of 32 mA cm/sup -2/, fill factors of 0.52, and conversion efficiencies of 8.1% have been measured under 100 mW cm/sup -2/ (AM1) simulated solar illumination.

Modeling of breakdown during the post-arc phase of a vacuum circuit breaker

NASA Astrophysics Data System (ADS)

Sarrailh, P.; Garrigues, L.; Boeuf, J. P.; Hagelaar, G. J. M.

2010-12-01

After a high-current interruption in a vacuum circuit breaker (VCB), the electrode gap is filled with a high density copper vapor plasma in a large copper vapor density (~1022 m-3). The copper vapor density is sustained by electrode evaporation. During the post-arc phase, a rapidly increasing voltage is applied to the gap, and a sheath forms and expands, expelling the plasma from the gap when circuit breaking is successful. There is, however, a risk of breakdown during that phase, leading to the failure of the VCB. Preventing breakdown during the post-arc phase is an important issue for the improvement of VCB reliability. In this paper, we analyze the risk of Townsend breakdown in the high copper vapor density during the post-arc phase using a numerical model that takes into account secondary electron emission, volume ionization, and plasma and neutral transport, for given electrode temperatures. The simulations show that fast neutrals created in the cathode sheath by charge exchange collisions with ions generate a very large secondary electron emission current that can lead to Townsend breakdown. The results also show that the risk of failure of the VCB due to Townsend breakdown strongly depends on the electrode temperatures (which govern the copper vapor density) and becomes important for temperatures greater than 2100 K, which can be reached in vacuum arcs. The simulations also predict that a hotter anode tends to increase the risk of Townsend breakdown.

Development of a multiperspective optical measuring system for investigating decaying switching arcs at the nozzle exit of circuit breakers.

PubMed

Stoffels, M; Simon, S; Nikolic, P G; Stoller, P; Carstensen, J

2017-03-01

High-voltage gas circuit breakers, which play an important role in the operation and protection of the power grid, function by drawing an arc between two contacts and then extinguishing it by cooling it using a transonic gas flow. Improving the design of circuit breakers requires an understanding of the physical processes in the interruption of the arc, particularly during the zero crossing of the alternating current (the point in time when the arc can be interrupted). Most diagnostic techniques currently available focus on measurement of current, voltage, and gas pressure at defined locations. However, these integral properties do not give sufficient insight into the arc physics. To understand the current interruption process, spatially resolved information about the density, temperature, and conductivity of the arc and surrounding gas flow is needed. Owing to the three-dimensional, unstable nature of the arc in a circuit breaker, especially near current zero, a spatially resolved, tomographic diagnostic technique is required that is capable of freezing the rapid, transient behavior and that is insensitive to the vibrations and electromagnetic interference inherent in the interruption of short-circuit current arcs. Here a new measurement system, based on background-oriented schlieren (BOS) imaging, is presented and assessed. BOS imaging using four beams consisting of white light sources, a background pattern, imaging optics, and a camera permits measurement of the line-of-sight integrated refractive index. Tomographic reconstruction is used to determine the three-dimensional, spatially resolved index of refraction distribution that in turn is used to calculate the density. The quantitative accuracy of a single beam of the BOS setup is verified by using a calibration lens with a known focal length. The ability of the tomographic reconstruction to detect asymmetric features of the arc and surrounding gas flow is assessed semiquantitatively using a nozzle that generates two gas jets, as described in [Exp. Fluids43, 241 (2007)EXFLDU0723-486410.1007/s00348-007-0331-1]. Experiments using a simple model of a circuit breaker, which provides optical access to an ∼1  kA arc that burns between two contacts and is blown through a nozzle system by synthetic air from a high pressure reservoir, are also described. The density in the decaying arc and surrounding gas flow is reconstructed, and the limitations of the technique, which are related to the temporal and spatial resolution, are addressed.

Influence of residual plasma drift velocity on the post-arc sheath expansion of vacuum circuit breakers

NASA Astrophysics Data System (ADS)

Mo, Yongpeng; Shi, Zongqian; Bai, Zhibin; Jia, Shenli; Wang, Lijun

2016-05-01

The residual plasma in the inter-contact region of a vacuum circuit breaker moves towards the post-arc cathode at current zero, because the residual plasma mainly comes from the cathode spots during the arc burning process. In the most previous theoretical researches on the post-arc sheath expansion process of vacuum circuit breakers, only the thermal motion of residual plasma was taken into consideration. Alternately, the residual plasma was even assumed to be static at the moment of current zero in some simplified models. However, the influence of residual plasma drift velocity at current zero on the post-arc sheath expansion process was rarely investigated. In this paper, this effect is investigated by a one-dimensional particle-in-cell model. Simulation results indicate that the sheath expands slower with higher residual plasma drift velocity in the initial sheath expansion stage. However, with the increase of residual plasma drift velocity, the overall plasma density in the inter-contact region decreases faster, and the sheath expansion velocity increases earlier. Consequently, as a whole, it needs shorter time to expel the residual plasma from the inter-contact region. Furthermore, if the residual plasma drift velocity is high enough, the sheath expansion process ceases before it develops to the post-arc anode. Besides, the influence of the collisions between charges and neutrals is investigated as well in terms of the density of metal vapor. It shows that the residual plasma drift velocity takes remarkable effect only if the density of the metal vapor is relatively low, which corresponds to the circumstance of low-current interruptions.

Photovoltaic and thermophotovoltaic devices with quantum barriers

DOEpatents

Wernsman, Bernard R [Jefferson Hills, PA

2007-04-10

A photovoltaic or thermophotovoltaic device includes a diode formed by p-type material and n-type material joined at a p-n junction and including a depletion region adjacent to said p-n junction, and a quantum barrier disposed near or in the depletion region of the p-n junction so as to decrease device reverse saturation current density while maintaining device short circuit current density. In one embodiment, the quantum barrier is disposed on the n-type material side of the p-n junction and decreases the reverse saturation current density due to electrons while in another, the barrier is disposed on the p-type material side of the p-n junction and decreases the reverse saturation current density due to holes. In another embodiment, both types of quantum barriers are used.

Post-arc current simulation based on measurement in vacuum circuit breaker with a one-dimensional particle-in-cell model

NASA Astrophysics Data System (ADS)

Jia, Shenli; Mo, Yongpeng; Shi, Zongqian; Li, Junliang; Wang, Lijun

2017-10-01

The post-arc dielectric recovery process has a decisive effect on the current interruption performance in a vacuum circuit breaker. The dissipation of residual plasma at the moment of current zero under the transient recovery voltage, which is the first stage of the post-arc dielectric recovery process and forms the post-arc current, has attracted many concerns. A one-dimensional particle-in-cell model is developed to simulate the measured post-arc current in the vacuum circuit breaker in this paper. At first, the parameters of the residual plasma are estimated roughly by the waveform of the post-arc current which is taken from measurements. After that, different components of the post-arc current, which are formed by the movement of charged particles in the residual plasma, are discussed. Then, the residual plasma density is adjusted according to the proportion of electrons and ions absorbed by the post-arc anode derived from the particle-in-cell simulation. After this adjustment, the post-arc current waveform obtained from the simulation is closer to that obtained from measurements.

Recombination in polymer-fullerene bulk heterojunction solar cells

NASA Astrophysics Data System (ADS)

Cowan, Sarah R.; Roy, Anshuman; Heeger, Alan J.

2010-12-01

Recombination of photogenerated charge carriers in polymer bulk heterojunction (BHJ) solar cells reduces the short circuit current (Jsc) and the fill factor (FF). Identifying the mechanism of recombination is, therefore, fundamentally important for increasing the power conversion efficiency. Light intensity and temperature-dependent current-voltage measurements on polymer BHJ cells made from a variety of different semiconducting polymers and fullerenes show that the recombination kinetics are voltage dependent and evolve from first-order recombination at short circuit to bimolecular recombination at open circuit as a result of increasing the voltage-dependent charge carrier density in the cell. The “missing 0.3 V” inferred from comparison of the band gaps of the bulk heterojunction materials and the measured open-circuit voltage at room-temperature results from the temperature dependence of the quasi-Fermi levels in the polymer and fullerene domains—a conclusion based on the fundamental statistics of fermions.

Comparison of chitosan and chitosan nanoparticles on the performance and charge recombination of water-based gel electrolyte in dye sensitized solar cells.

PubMed

Khalili, Malihe; Abedi, Mohammad; Amoli, Hossein Salar; Mozaffari, Seyed Ahmad

2017-11-01

In commercialization of liquid dye-sensitized solar cells (DSSCs), whose leakage, evaporation and toxicity of organic solvents are limiting factors, replacement of organic solvents with water-based gel electrolyte is recommended. This work reports on utilizing and comparison of chitosan and chitosan nanoparticle as different gelling agents in preparation of water-based gel electrolyte in fabrication of dye sensitized solar cells. All photovoltaic parameters such as open circuit voltage (V oc ), fill factor (FF), short circuit current density (J sc ) and conversion efficiency (η) were measured. For further characterization, electrochemical impedance spectroscopy (EIS) was used to study the charge transfer at Pt/electrolyte interface and charge recombination and electron transport at TiO 2 /dye/electrolyte interface. Significant improvements in conversion efficiency and short circuit current density of DSSCs fabricated by chitosan nanoparticle were observed that can be attributed to the higher mobility of I 3 - due to the lower viscosity and smaller size of chitosan nanoparticles. Copyright © 2017 Elsevier Ltd. All rights reserved.

Effect of povidone-iodine addition on the corrosion behavior of cp-Ti in normal saline.

PubMed

Bhola, Rahul; Bhola, Shaily M; Mishra, Brajendra; Olson, David L

2010-05-01

The effect of various concentrations of povidone-iodine (PI) on the corrosion behavior of a commercially pure titanium alloy (Ti-1) has been investigated in normal saline solution to simulate the povidone-iodine addition in an oral environment. The open circuit potential, electrochemical impedance spectroscopy and potentiodynamic polarization measurements have been used to characterize the electrochemical phenomena occurring on the alloy surface. The open circuit potential values for Ti-1 in various concentrations of PI shift considerably towards noble direction as compared to pure normal saline. In the potentiodynamic polarization curve for Ti-1 in various solutions, the cathodic current density has increased for all concentrations of PI and the anodic current density has decreased. Only the 0.1% PI concentration is able to inhibit corrosion of Ti-1 in normal saline and the other higher concentrations studied, accelerate corrosion. The EIS data for Ti-1 in normal saline and in various concentrations of PI follows a one time constant circuit, suggesting the formation of a single passive film on Ti-1 which is not altered by the addition of PI to normal saline.

Self-Paced Physics, Segments 28-31.

ERIC Educational Resources Information Center

New York Inst. of Tech., Old Westbury.

Four study segments of the Self-Paced Physics Course materials are presented in this sixth problems and solutions book used as a part of student course work. The subject matter is related to electric currents, current densities, resistances, Ohm's law, voltages, Joule heating, electromotive forces, single loop circuits, series and parallel…

Speckle measurements of density and temperature profiles in a model gas circuit breaker

NASA Astrophysics Data System (ADS)

Stoller, P. C.; Panousis, E.; Carstensen, J.; Doiron, C. B.; Färber, R.

2015-01-01

Speckle imaging was used to measure the density and temperature distribution in the arc zone of a model high voltage circuit breaker during the high current phase and under conditions simulating those present during current-zero crossings (current-zero-like arc); the arc was stabilized by a transonic, axial flow of synthetic air. A single probe beam was used; thus, accurate reconstruction was only possible for axially symmetric gas flows and arc channels. The displacement of speckles with respect to a reference image was converted to a line-of-sight integrated deflection angle, which was in turn converted into an axially symmetric refractive index distribution using a multistep process that made use of the inverse Radon transform. The Gladstone-Dale relation, which gives the index of refraction as a function of density, was extended to high temperatures by taking into account dissociation and ionization processes. The temperature and density were determined uniquely by assuming that the pressure distribution in the case of cold gas flow (in the absence of an arc) is not modified significantly by the arc. The electric conductivity distribution was calculated from the temperature profile and compared to measurements of the arc voltage and to previous results published in the literature for similar experimental conditions.

Grain boundary modification to suppress lithium penetration through garnet-type solid electrolyte

NASA Astrophysics Data System (ADS)

Hongahally Basappa, Rajendra; Ito, Tomoko; Morimura, Takao; Bekarevich, Raman; Mitsuishi, Kazutaka; Yamada, Hirotoshi

2017-09-01

Garnet-type solid electrolytes are one of key materials to enable practical usage of lithium metal anode for high-energy-density batteries. However, it suffers from lithium growth in pellets on charging, which causes short circuit. In this study, grain boundaries of Li6.5La3Zr1.5Ta0.5O12 (LLZT) pellets are modified with Li2CO3 and LiOH to investigate the influence of the microstructure of grain boundaries on lithium growth and to study the mechanism of the lithium growth. In spite of similar properties (relative density of ca. 96% and total ionic conductivity of 7 × 10-4 S cm-1 at 25 °C), the obtained pellets exhibit different tolerance on the short circuit. The LLZT pellets prepared from LiOH-modified LLZT powders exhibit rather high critical current density of 0.6 mA cm-2, at which short circuit occurs. On the other hand, the LLZT pellets without grain boundary modification short-circuited at 0.15 mA cm-2. Microstructural analyses by means of SEM, STEM and EIS suggest that lithium grows through interconnected open voids, and reveal that surface layers such as Li2CO3 and LiOH are not only plug voids but also facilitate the sintering of LLZT to suppress the lithium growth. The results indicate a strategy towards short-circuit-free lithium metal batteries.

Integrated spectral photocurrent density and reproducibility analyses of excitonic ZnO/NiO heterojunction.

PubMed

Patel, Malkeshkumar; Kim, Joondong

2017-12-01

In this data article, the excitonic ZnO/NiO heterojunction device (Patel et al., 2017) [1] was measured for the integrated photocurrent density and reproducibility. Photograph of the prepared devices of ZnO/NiO on the FTO/glass is presented. Integrated photocurrent density as a function of photon energy from the sunlight is presented. Quantum efficiency measurement system (McScienceK3100, Korea) compliance with International Measurement System was employed to measure ZnO/NIO devices. These data are shown for the 300-440 nm of segment of the sunlight (AM1.5G, http://rredc.nrel.gov/solar/spectra/am1.5/). Reproducibility measure of ZnO/NiO device was presented for nine devices with the estimated device performance parameters including the open circuit voltage, short circuit current density, fill factor and power conversion efficiency.

Metallization failures

NASA Technical Reports Server (NTRS)

Beatty, R.

1971-01-01

Metallization-related failure mechanisms were shown to be a major cause of integrated circuit failures under accelerated stress conditions, as well as in actual use under field operation. The integrated circuit industry is aware of the problem and is attempting to solve it in one of two ways: (1) better understanding of the aluminum system, which is the most widely used metallization material for silicon integrated circuits both as a single level and multilevel metallization, or (2) evaluating alternative metal systems. Aluminum metallization offers many advantages, but also has limitations particularly at elevated temperatures and high current densities. As an alternative, multilayer systems of the general form, silicon device-metal-inorganic insulator-metal, are being considered to produce large scale integrated arrays. The merits and restrictions of metallization systems in current usage and systems under development are defined.

Solar-terrestrial coupling through atmospheric electricity

NASA Technical Reports Server (NTRS)

Roble, R. G.; Hays, P. B.

1979-01-01

There are a number of measurements of electrical variations that suggest a solar-terrestrial influence on the global atmospheric electrical circuit. The measurements show variations associated with solar flares, solar magnetic sector boundary crossings, geomagnetic activity, aurorae, differences between ground current and potential gradients at high and low latitudes, and solar cycle variations. The evidence for each variation is examined. Both the experimental evidence and the calculations made with a global model of atmospheric electricity indicate that there is solar-terrestrial coupling through atmospheric electricity which operates by altering the global electric current and field distribution. A global redistribution of currents and fields can be caused by large-scale changes in electrical conductivity, by alteration of the columnar resistance between thunderstorm cloud tops and the ionosphere, or by both. If the columnar resistance is altered above thunderstorms, more current will flow in the global circuit, changing the ionospheric potential and basic circuit variables such as current density and electric fields. The observed variations of currents and fields during solar-induced disturbances are generally less than 50% of mean values near the earth's surface.

Process Research of Polycrystalline Silicon Material (PROPSM)

NASA Technical Reports Server (NTRS)

Culik, J. S.

1984-01-01

An investigation was begun into the usefulness of molecular hydrogen annealing on polycrystalline solar cells. No improvement was realized even after twenty hours of hydrogenation. Thus, samples were chosen on the basis of: (1) low open circuit voltage; (2) low shunt conductance; and (3) high light generated current. These cells were hydrogenated in molecular hydrogen at 300 C. The differences between the before and after hydrogenation values are so slight as to be negligible. These cells have light generated current densities that indicate long minority carrier diffusion lengths. The open circuit voltage appears to be degraded, and quasi-neutral recombination current enhanced. Therefore, molecular hydrogen is not usful for passivating electrically active defects.

Low-Voltage Complementary Electronics from Ion-Gel-Gated Vertical Van der Waals Heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Yongsuk; Kang, Junmo; Jariwala, Deep

2016-03-22

Low-voltage complementary circuits comprising n-type and p-type van der Waals heterojunction vertical field-effect transistors (VFETs) are demonstrated. The resulting VFETs possess high on-state current densities (>3000 A cm-2) and on/off current ratios (>104) in a narrow voltage window (<3 V).

Wideband low-noise variable-gain BiCMOS transimpedance amplifier

NASA Astrophysics Data System (ADS)

Meyer, Robert G.; Mack, William D.

1994-06-01

A new monolithic variable gain transimpedance amplifier is described. The circuit is realized in BiCMOS technology and has measured gain of 98 kilo ohms, bandwidth of 128 MHz, input noise current spectral density of 1.17 pA/square root of Hz and input signal-current handling capability of 3 mA.

Influence of residual plasma drift velocity on the post-arc sheath expansion of vacuum circuit breakers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mo, Yongpeng; Shi, Zongqian; Jia, Shenli

The residual plasma in the inter-contact region of a vacuum circuit breaker moves towards the post-arc cathode at current zero, because the residual plasma mainly comes from the cathode spots during the arc burning process. In the most previous theoretical researches on the post-arc sheath expansion process of vacuum circuit breakers, only the thermal motion of residual plasma was taken into consideration. Alternately, the residual plasma was even assumed to be static at the moment of current zero in some simplified models. However, the influence of residual plasma drift velocity at current zero on the post-arc sheath expansion process wasmore » rarely investigated. In this paper, this effect is investigated by a one-dimensional particle-in-cell model. Simulation results indicate that the sheath expands slower with higher residual plasma drift velocity in the initial sheath expansion stage. However, with the increase of residual plasma drift velocity, the overall plasma density in the inter-contact region decreases faster, and the sheath expansion velocity increases earlier. Consequently, as a whole, it needs shorter time to expel the residual plasma from the inter-contact region. Furthermore, if the residual plasma drift velocity is high enough, the sheath expansion process ceases before it develops to the post-arc anode. Besides, the influence of the collisions between charges and neutrals is investigated as well in terms of the density of metal vapor. It shows that the residual plasma drift velocity takes remarkable effect only if the density of the metal vapor is relatively low, which corresponds to the circumstance of low-current interruptions.« less

Thomson scattering diagnostics of decay processes of Ar/SF6 gas-blast arcs confined by a nozzle

NASA Astrophysics Data System (ADS)

Tomita, Kentaro; Gojima, Daisuke; Nagai, Kazuhiko; Uchino, Kiichiro; Kamimae, Ryo; Tanaka, Yasunori; Suzuki, Katsumi; Iijima, Takanori; Uchii, Toshiyuki; Shinkai, Takeshi

2013-09-01

Because of its instability, it is difficult to measure precisely the electron density (ne) of a long-gap decaying arc discharge in a circuit breaker. However, it is well known that it is an essential parameter for the determination of success or failure of the current interruption in a circuit breaker. In this paper, the spatiotemporal evolutions of the electron density were successfully measured in decaying SF6 gas-blast arc discharges formed with a long gap (50 mm) in a confined nozzle using laser Thomson scattering. Pure Ar gas and an 80%Ar/20%SF6 mixture gas were used as the arc quenching media at atmospheric pressure. After reducing the current to zero, both the measured ne and arc radius in the Ar/SF6 gas arc clearly decayed more rapidly than in the pure Ar gas arc.

Short Pulse UV-Visible Waveguide Laser.

DTIC Science & Technology

1980-07-01

27 B. Relaxation Processes ...... ................... ... 30 C. Equivalent Circuit ...... .................... ... 33 II V. KINETIC MODELING...101 2 2-() 0 10 20 30 40 TIME (nsec) Fig. 6 Temporal evolution of the current, various N +densities, and the electron density as revealed by the...processes consisting of dissociative 30 * TABLE 1 RELAXATION REACTION RATES USED IN THE He-N MODEL 2 Reaction Rate. Reference Helium Metastable Reactions 1

Noise performance limits of advanced x-ray imagers employing poly-Si-based active pixel architectures

NASA Astrophysics Data System (ADS)

Koniczek, Martin; El-Mohri, Youcef; Antonuk, Larry E.; Liang, Albert; Zhao, Qihua; Jiang, Hao

2011-03-01

A decade after the clinical introduction of active matrix, flat-panel imagers (AMFPIs), the performance of this technology continues to be limited by the relatively large additive electronic noise of these systems - resulting in significant loss of detective quantum efficiency (DQE) under conditions of low exposure or high spatial frequencies. An increasingly promising approach for overcoming such limitations involves the incorporation of in-pixel amplification circuits, referred to as active pixel architectures (AP) - based on low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). In this study, a methodology for theoretically examining the limiting noise and DQE performance of circuits employing 1-stage in-pixel amplification is presented. This methodology involves sophisticated SPICE circuit simulations along with cascaded systems modeling. In these simulations, a device model based on the RPI poly-Si TFT model is used with additional controlled current sources corresponding to thermal and flicker (1/f) noise. From measurements of transfer and output characteristics (as well as current noise densities) performed upon individual, representative, poly-Si TFTs test devices, model parameters suitable for these simulations are extracted. The input stimuli and operating-point-dependent scaling of the current sources are derived from the measured current noise densities (for flicker noise), or from fundamental equations (for thermal noise). Noise parameters obtained from the simulations, along with other parametric information, is input to a cascaded systems model of an AP imager design to provide estimates of DQE performance. In this paper, this method of combining circuit simulations and cascaded systems analysis to predict the lower limits on additive noise (and upper limits on DQE) for large area AP imagers with signal levels representative of those generated at fluoroscopic exposures is described, and initial results are reported.

Compact atmospheric pressure plasma self-resonant drive circuits

NASA Astrophysics Data System (ADS)

Law, V. J.; Anghel, S. D.

2012-02-01

This paper reports on compact solid-state self-resonant drive circuits that are specifically designed to drive an atmospheric pressure plasma jet and a parallel-plate dielectric barrier discharge of small volume (0.5 cm3). The atmospheric pressure plasma (APP) device can be operated with helium, argon or a mixture of both. Equivalent electrical models of the self-resonant drive circuits and discharge are developed and used to estimate the plasma impedance, plasma power density, current density or electron number density of three APP devices. These parameters and the kinetic gas temperature are dependent on the self-resonant frequency of the APP device. For a fixed switching frequency and APP device geometry, the plasma parameters are controlled by adjusting the dc voltage at the primary coil and the gas flow rate. The resonant frequency is controlled by the selection of the switching power transistor and means of step-up voltage transformation (ferrite core, flyback transformer, or Tesla coil). The flyback transformer operates in the tens of kHz, the ferrite core in the hundreds of kHz and Tesla coil in the MHz range. Embedded within this work is the principle of frequency pulling which is exemplified in the flyback transformer circuit that utilizes a pickup coil for feedback control of the switching frequency.

Sloshing instability and electrolyte layer rupture in liquid metal batteries

NASA Astrophysics Data System (ADS)

Weber, Norbert; Beckstein, Pascal; Herreman, Wietze; Horstmann, Gerrit Maik; Nore, Caroline; Stefani, Frank; Weier, Tom

2017-05-01

Liquid metal batteries (LMBs) are discussed today as a cheap grid scale energy storage, as required for the deployment of fluctuating renewable energies. Built as stable density stratification of two liquid metals separated by a thin molten salt layer, LMBs are susceptible to short-circuit by fluid flows. Using direct numerical simulation, we study a sloshing long wave interface instability in cylindrical cells, which is already known from aluminium reduction cells. After characterising the instability mechanism, we investigate the influence of cell current, layer thickness, density, viscosity, conductivity and magnetic background field. Finally we study the shape of the interface and give a dimensionless parameter for the onset of sloshing as well as for the short-circuit.

Interfacing spin qubits in quantum dots and donors—hot, dense, and coherent

NASA Astrophysics Data System (ADS)

Vandersypen, L. M. K.; Bluhm, H.; Clarke, J. S.; Dzurak, A. S.; Ishihara, R.; Morello, A.; Reilly, D. J.; Schreiber, L. R.; Veldhorst, M.

2017-09-01

Semiconductor spins are one of the few qubit realizations that remain a serious candidate for the implementation of large-scale quantum circuits. Excellent scalability is often argued for spin qubits defined by lithography and controlled via electrical signals, based on the success of conventional semiconductor integrated circuits. However, the wiring and interconnect requirements for quantum circuits are completely different from those for classical circuits, as individual direct current, pulsed and in some cases microwave control signals need to be routed from external sources to every qubit. This is further complicated by the requirement that these spin qubits currently operate at temperatures below 100 mK. Here, we review several strategies that are considered to address this crucial challenge in scaling quantum circuits based on electron spin qubits. Key assets of spin qubits include the potential to operate at 1 to 4 K, the high density of quantum dots or donors combined with possibilities to space them apart as needed, the extremely long-spin coherence times, and the rich options for integration with classical electronics based on the same technology.

Effect of back reflectors on photon absorption in thin-film amorphous silicon solar cells

NASA Astrophysics Data System (ADS)

Hossain, Mohammad I.; Qarony, Wayesh; Hossain, M. Khalid; Debnath, M. K.; Uddin, M. Jalal; Tsang, Yuen Hong

2017-10-01

In thin-film solar cells, the photocurrent conversion productivity can be distinctly boosted-up utilizing a proper back reflector. Herein, the impact of different smooth and textured back reflectors was explored and effectuated to study the optical phenomena with interface engineering strategies and characteristics of transparent contacts. A unique type of wet-chemically textured glass-substrate 3D etching mask used in superstrate (p-i-n) amorphous silicon-based solar cell along with legitimated back reflector permits joining the standard light-trapping methodologies, which are utilized to upgrade the energy conversion efficiency (ECE). To investigate the optical and electrical properties of solar cell structure, the optical simulations in three-dimensional measurements (3D) were performed utilizing finite-difference time-domain (FDTD) technique. This design methodology allows to determine the power losses, quantum efficiencies, and short-circuit current densities of various layers in such solar cell. The short-circuit current densities for different reflectors were varied from 11.50 to 13.27 and 13.81 to 16.36 mA/cm2 for the smooth and pyramidal textured solar cells, individually. Contrasted with the comparable flat reference cell, the short-circuit current density of textured solar cell was increased by around 24%, and most extreme outer quantum efficiencies rose from 79 to 86.5%. The photon absorption was fundamentally improved in the spectral region from 600 to 800 nm with no decrease of photocurrent shorter than 600-nm wavelength. Therefore, these optimized designs will help to build the effective plans next-generation amorphous silicon-based solar cells.

Systematic analysis of diffuse rear reflectors for enhanced light trapping in silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pfeffer, Florian; Eisenlohr, Johannes; Basch, Angelika

Simple diffuse rear reflectors can enhance the light path length of weakly absorbed near infrared light in silicon solar cells and set a benchmark for more complex and expensive light trapping structures like dielectric gratings or plasmonic particles. We analyzed such simple diffuse rear reflectors systematically by optical and electrical measurements. We applied white paint, TiO 2 nanoparticles, white backsheets and a silver mirror to bifacial silicon solar cells and measured the enhancement of the external quantum efficiency for three different solar cell geometries: planar front and rear side, textured front and planar rear side, and textured front and rearmore » side. We showed that an air-gap between the solar cell and the reflector decreases the absorption enhancement significantly, thus white paint and TiO 2 nanoparticles directly applied to the rear cell surface lead to the highest short circuit current density enhancements. Here, the short circuit current density gains for a 200 um thick planar solar cell reached up to 1.8 mA/cm 2, compared to a non-reflecting black rear side and up to 0.8 mA/cm 2 compared to a high-quality silver mirror rear side. For solar cells with textured front side the short circuit current density gains are in the range between 0.5 and 1.0 mA/cm 2 compared to a non-reflecting black rear side and do not significantly depend on the angular characteristic of the rear side reflector but mainly on its absolute reflectance.« less

Systematic analysis of diffuse rear reflectors for enhanced light trapping in silicon solar cells

DOE PAGES

Pfeffer, Florian; Eisenlohr, Johannes; Basch, Angelika; ...

2016-04-08

Simple diffuse rear reflectors can enhance the light path length of weakly absorbed near infrared light in silicon solar cells and set a benchmark for more complex and expensive light trapping structures like dielectric gratings or plasmonic particles. We analyzed such simple diffuse rear reflectors systematically by optical and electrical measurements. We applied white paint, TiO 2 nanoparticles, white backsheets and a silver mirror to bifacial silicon solar cells and measured the enhancement of the external quantum efficiency for three different solar cell geometries: planar front and rear side, textured front and planar rear side, and textured front and rearmore » side. We showed that an air-gap between the solar cell and the reflector decreases the absorption enhancement significantly, thus white paint and TiO 2 nanoparticles directly applied to the rear cell surface lead to the highest short circuit current density enhancements. Here, the short circuit current density gains for a 200 um thick planar solar cell reached up to 1.8 mA/cm 2, compared to a non-reflecting black rear side and up to 0.8 mA/cm 2 compared to a high-quality silver mirror rear side. For solar cells with textured front side the short circuit current density gains are in the range between 0.5 and 1.0 mA/cm 2 compared to a non-reflecting black rear side and do not significantly depend on the angular characteristic of the rear side reflector but mainly on its absolute reflectance.« less

Lithography for enabling advances in integrated circuits and devices.

PubMed

Garner, C Michael

2012-08-28

Because the transistor was fabricated in volume, lithography has enabled the increase in density of devices and integrated circuits. With the invention of the integrated circuit, lithography enabled the integration of higher densities of field-effect transistors through evolutionary applications of optical lithography. In 1994, the semiconductor industry determined that continuing the increase in density transistors was increasingly difficult and required coordinated development of lithography and process capabilities. It established the US National Technology Roadmap for Semiconductors and this was expanded in 1999 to the International Technology Roadmap for Semiconductors to align multiple industries to provide the complex capabilities to continue increasing the density of integrated circuits to nanometre scales. Since the 1960s, lithography has become increasingly complex with the evolution from contact printers, to steppers, pattern reduction technology at i-line, 248 nm and 193 nm wavelengths, which required dramatic improvements of mask-making technology, photolithography printing and alignment capabilities and photoresist capabilities. At the same time, pattern transfer has evolved from wet etching of features, to plasma etch and more complex etching capabilities to fabricate features that are currently 32 nm in high-volume production. To continue increasing the density of devices and interconnects, new pattern transfer technologies will be needed with options for the future including extreme ultraviolet lithography, imprint technology and directed self-assembly. While complementary metal oxide semiconductors will continue to be extended for many years, these advanced pattern transfer technologies may enable development of novel memory and logic technologies based on different physical phenomena in the future to enhance and extend information processing.

Catalysts for Lightweight Solar Fuels Generation

DTIC Science & Technology

2017-03-10

single bandgap solar cells to OER catalysts could lead to very high solar -to-fuel efficiencies. Figure 3 illustrates a PV -EC utilizing a PV , an...3- or 4 -single junction c-Si solar cells connected in series. Considering a PV -EC device based on commercially available single junction-Si solar ...30.8%) with open circuit voltage and short circuit current density ; total plot area is scaled to incident solar power (100 mW cm–2). The PV -EC

Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery

NASA Astrophysics Data System (ADS)

Cheng, Zai-Jun; San, Hai-Sheng; Chen, Xu-Yuan; Liu, Bo; Feng, Zhi-Hong

2011-07-01

A high open-circuit voltage betavoltaic microbattery based on a GaN p-i-n diode is demonstrated. Under the irradiation of a 4×4 mm2 planar solid 63Ni source with an activity of 2 mCi, the open-circuit voltage Voc of the fabricated single 2×2mm2 cell reaches as high as 1.62 V, the short-circuit current density Jsc is measured to be 16nA/cm2. The microbattery has a fill factor of 55%, and the energy conversion efficiency of beta radiation into electricity reaches to 1.13%. The results suggest that GaN is a highly promising potential candidate for long-life betavoltaic microbatteries used as power supplies for microelectromechanical system devices.

Positive Voltage Hazard to EMU Crewman from Currents through Plasma

NASA Technical Reports Server (NTRS)

Koontz, Steven L.; Kramer, Leonard; Hamilton, Doug; Mikatarian, Ronald

2010-01-01

This paper describes the model of the EMU with a human body in the circuit that has been used by NASA to evaluate the low positive voltage hazard. The model utilizes the electron collection characterization from on orbit Langmuir probe data as representative of electron collection to a positive charged surface with a wide range of on orbit plasma temperature and density conditions. The data has been unified according to non-linear theoretical temperature and density variation of the electron saturated probe current collection theory and used as a model for the electron collection at EMU surfaces. Vulnerable paths through the EMU connecting through the crewman s body have been identified along with electrical impedance of the exposed body parts. The body impedance information is merged with the electron collection characteristics in circuit simulation software (SPICE). The assessment shows that currents can be on the order of 20 mA for a 15 V exposure and of order 4 mA at 3V. These currents formally violate NASA protocol for electric current exposures however the human factors associated with subjective consequences of noxious stimuli from low voltage exposure during the stressful conditions of EVA are an area of active inquiry.

Hybrid ZnO/phthalocyanine photovoltaic device with highly resistive ZnO intermediate layer.

PubMed

Izaki, Masanobu; Chizaki, Ryo; Saito, Takamasa; Murata, Kazufumi; Sasano, Junji; Shinagawa, Tsutomu

2013-10-09

We report a hybrid photovoltaic device composed of a 3.3 eV bandgap zinc oxide (ZnO) semiconductor and metal-free phthalocyanine layers and the effects of the insertion of the highly resistive ZnO buffer layer on the electrical characteristics of the rectification feature and photovoltaic performance. The hybrid photovoltaic devices have been constructed by electrodeposition of the 300 nm thick ZnO layer in a simple zinc nitrate aqueous solution followed by vacuum evaporation of 50-400 nm thick-phthalocyanine layers. The ZnO layers with the resistivity of 1.8 × 10(3) and 1 × 10(8) Ω cm were prepared by adjusting the cathodic current density and were installed into the hybrid photovoltaic devices as the n-type and buffer layer, respectively. The phthalocyanine layers with the characteristic monoclinic lattice showed a characteristic optical absorption feature regardless of the thickness, but the preferred orientation changed depending on the thickness. The ZnO buffer-free hybrid 50 nm thick phthalocyanine/n-ZnO photovoltaic device showed a rectification feature but possessed a poor photovoltaic performance with a conversion efficiency of 7.5 × 10(-7) %, open circuit voltage of 0.041 V, and short circuit current density of 8.0 × 10(-5) mA cm(-2). The insertion of the ZnO buffer layer between the n-ZnO and phthalocyanine layers induced improvements in both the rectification feature and photovoltaic performance. The excellent rectification feature with a rectification ratio of 3188 and ideally factor of 1.29 was obtained for the hybrid 200 nm thick phthalocyanine/ZnO buffer/n-ZnO photovoltaic device, and the hybrid photovoltaic device possessed an improved photovoltaic performance with the conversion efficiency of 0.0016%, open circuit voltage of 0.31 V, and short circuit current density of 0.015 mA cm(-2).

Proposal of Magnetic Circuit using Magnetic Shielding with Bulk-Type High Tc Superconductors

NASA Astrophysics Data System (ADS)

Fukuoka, Katsuhiro; Hashimoto, Mitsuo; Tomita, Masaru; Murakami, Masato

Recently, bulk-type high Tc superconductors having a characteristic of critical current density over 104 A/cm2 in liquid nitrogen temperature (77K) on 1T, can be produced. They are promising for many practical applications such as a magnetic bearing, a magnetic levitation, a flywheel, a magnetic shielding and others. In this research, we propose a magnetic circuit that is able to use for the magnetic shield of plural superconductors as an application of bulk-type high Tc superconductors. It is a closed magnetic circuit by means of a toroidal core. Characteristics of the magnetic circuit surrounded with superconductors are evaluated and the possibility is examined. As the magnetic circuit of the ferrite core is surrounded with superconductors, the magnetic flux is shielded even if it leaked from the ferrite core.

Polymer solar cells with enhanced open-circuit voltage and efficiency

NASA Astrophysics Data System (ADS)

Chen, Hsiang-Yu; Hou, Jianhui; Zhang, Shaoqing; Liang, Yongye; Yang, Guanwen; Yang, Yang; Yu, Luping; Wu, Yue; Li, Gang

2009-11-01

Following the development of the bulk heterojunction structure, recent years have seen a dramatic improvement in the efficiency of polymer solar cells. Maximizing the open-circuit voltage in a low-bandgap polymer is one of the critical factors towards enabling high-efficiency solar cells. Study of the relation between open-circuit voltage and the energy levels of the donor/acceptor in bulk heterojunction polymer solar cells has stimulated interest in modifying the open-circuit voltage by tuning the energy levels of polymers. Here, we show that the open-circuit voltage of polymer solar cells constructed based on the structure of a low-bandgap polymer, PBDTTT, can be tuned, step by step, using different functional groups, to achieve values as high as 0.76 V. This increased open-circuit voltage combined with a high short-circuit current density results in a polymer solar cell with a power conversion efficiency as high as 6.77%, as certified by the National Renewable Energy Laboratory.

Hybrid solar cells with outstanding short-circuit currents based on a room temperature soft-chemical strategy: the case of P3HT:Ag2S.

PubMed

Lei, Yan; Jia, Huimin; He, Weiwei; Zhang, Yange; Mi, Liwei; Hou, Hongwei; Zhu, Guangshan; Zheng, Zhi

2012-10-24

P3HT:Ag(2)S hybrid solar cells with broad absorption from the UV to NIR band were directly fabricated on ITO glass by using a room temperature, low energy consumption, and low-cost soft-chemical strategy. The resulting Ag(2)S nanosheet arrays facilitate the construction of a perfect percolation structure with organic P3HT to form ordered bulk heterojunctions (BHJ); without interface modification, the assembled P3HT:Ag(2)S device exhibits outstanding short-circuit current densities (J(sc)) around 20 mA cm(-2). At the current stage, the optimized device exhibited a power conversion efficiency of 2.04%.

Cathodic Protection Measurement Through Inline Inspection Technology Uses and Observations

NASA Astrophysics Data System (ADS)

Ferguson, Briana Ley

This research supports the evaluation of an impressed current cathodic protection (CP) system of a buried coated steel pipeline through alternative technology and methods, via an inline inspection device (ILI, CP ILI tool, or tool), in order to prevent and mitigate external corrosion. This thesis investigates the ability to measure the current density of a pipeline's CP system from inside of a pipeline rather than manually from outside, and then convert that CP ILI tool reading into a pipe-to-soil potential as required by regulations and standards. This was demonstrated through a mathematical model that utilizes applications of Ohm's Law, circuit concepts, and attenuation principles in order to match the results of the ILI sample data by varying parameters of the model (i.e., values for over potential and coating resistivity). This research has not been conducted previously in order to determine if the protected potential range can be achieved with respect to the predicted current density from the CP ILI device. Kirchhoff's method was explored, but certain principals could not be used in the model as manual measurements were required. This research was based on circuit concepts which indirectly affected electrochemical processes. Through Ohm's law, the results show that a constant current density is possible in the protected potential range; therefore, indicates polarization of the pipeline, which leads to calcareous deposit development with respect to electrochemistry. Calcareous deposit is desirable in industry since it increases the resistance of the pipeline coating and lowers current, thus slowing the oxygen diffusion process. This research conveys that an alternative method for CP evaluation from inside of the pipeline is possible where the pipe-to-soil potential can be estimated (as required by regulations) from the ILI tool's current density measurement.

The atmospheric electric global circuit. [thunderstorm activity

NASA Technical Reports Server (NTRS)

Kasemir, H. W.

1979-01-01

The hypothesis that world thunderstorm activity represents the generator for the atmospheric electric current flow in the earth atmosphere between ground and the ionosphere is based on a close correlation between the magnitude and the diurnal variation of the supply current (thunderstorm generator current) and the load current (fair weather air-earth current density integrated over the earth surface). The advantages of using lightning survey satellites to furnish a base for accepting or rejecting the thunderstorm generator hypothesis are discussed.

Towards a rechargeable alcohol biobattery

NASA Astrophysics Data System (ADS)

Addo, Paul K.; Arechederra, Robert L.; Minteer, Shelley D.

This research focused on the transition of biofuel cell technology to rechargeable biobatteries. The bioanode compartment of the biobattery consisted of NAD-dependent alcohol dehydrogenase (ADH) immobilized into a carbon composite paste with butyl-3-methylimidazolium chloride (BMIMCl) ionic liquid serving as the electrolyte. Ferrocene was added to shuttle electrons to/from the electrode surface/current collector. The bioanode catalyzed the oxidation of ethanol to acetaldehyde in discharge mode. This bioanode was coupled to a cathode that consisted of Prussian Blue in a carbon composite paste with Nafion 212 acting as the separator between the two compartments. The biobattery can be fabricated in a charged mode with ethanol and have an open circuit potential of 0.8 V in the original state prior to charging or in the discharged mode with acetaldehyde and have an open circuit potential of 0.05 V. After charging it has an open circuit potential of 1.2 V and a maximum power density of 13.0 μW cm -3 and a maximum current density of 35.0 μA cm -3, respectively. The stability and efficiency of the biobattery were studied by cycling continuously at a discharging current of 0.4 mA and the results obtained showed reasonable stability over 50 cycles. This is a new type of secondary battery inspired by the metabolic processes of the living cell, which is an effective energy conversion system.

Numerical modeling of high-voltage circuit breaker arcs and their interraction with the power system

NASA Astrophysics Data System (ADS)

Orama, Lionel R.

In this work the interaction between series connected gas and vacuum circuit breaker arcs has been studied. The breakdown phenomena in vacuum interrupters during the post arc current period have been of special interest. Numerical models of gas and vacuum arcs were developed in the form of black box models. Especially, the vacuum post arc model was implemented by combining the existing transition model with an ion density function and expressions for the breakdown mechanisms. The test series studied reflect that for electric fields on the order of 10sp7V/m over the anode, the breakdown of the vacuum gap can result from a combination of both thermal and electrical stresses. For a particular vacuum device, the vacuum model helps to find the interruption limits of the electric field and power density over the anode. The series connection of gas and vacuum interrupters always performs better than the single gas device. Moreover, to take advantage of the good characteristics of both devices, the time between the current zero crossing in each interrupter can be changed. This current zero synchronization is controlled by changing the capacitance in parallel to the gas device. This gas/vacuum interrupter is suitable for interruption of very stressful short circuits in which the product of the dI/dt before current zero and the dV/dt after current zero is very high. Also, a single SF6 interrupter can be replaced by an air circuit breaker of the same voltage rating in series with a vacuum device without compromising the good performance of the SF6 device. Conceptually, a series connected vacuum device can be used for high voltage applications with equal distribution of electrical stresses between the individual interrupters. The equalization can be made by a sequential opening of the individual contact pairs, beginning with the interruptors that are closer to ground potential. This could eliminate the use of grading capacitors.

Influence of the layer parameters on the performance of the CdTe solar cells

NASA Astrophysics Data System (ADS)

Haddout, Assiya; Raidou, Abderrahim; Fahoume, Mounir

2018-03-01

Influence of the layer parameters on the performances of the CdTe solar cells is analyzed by SCAPS-1D. The ZnO: Al film shows a high efficiency than SnO2:F. Moreover, the thinner window layer and lower defect density of CdS films are the factor in the enhancement of the short-circuit current density. As well, to increase the open-circuit voltage, the responsible factors are low defect density of the absorbing layer CdTe and high metal work function. For the low cost of cell production, ultrathin film CdTe cells are used with a back surface field (BSF) between CdTe and back contact, such as PbTe. Further, the simulation results show that the conversion efficiency of 19.28% can be obtained for the cell with 1-μm-thick CdTe, 0.1-μm-thick PbTe and 30-nm-thick CdS.

Lithium-Based High Energy Density Flow Batteries

NASA Technical Reports Server (NTRS)

Bugga, Ratnakumar V. (Inventor); West, William C. (Inventor); Kindler, Andrew (Inventor); Smart, Marshall C. (Inventor)

2014-01-01

Systems and methods in accordance with embodiments of the invention implement a lithium-based high energy density flow battery. In one embodiment, a lithium-based high energy density flow battery includes a first anodic conductive solution that includes a lithium polyaromatic hydrocarbon complex dissolved in a solvent, a second cathodic conductive solution that includes a cathodic complex dissolved in a solvent, a solid lithium ion conductor disposed so as to separate the first solution from the second solution, such that the first conductive solution, the second conductive solution, and the solid lithium ionic conductor define a circuit, where when the circuit is closed, lithium from the lithium polyaromatic hydrocarbon complex in the first conductive solution dissociates from the lithium polyaromatic hydrocarbon complex, migrates through the solid lithium ionic conductor, and associates with the cathodic complex of the second conductive solution, and a current is generated.

Zn/gelled 6 M KOH/O 2 zinc-air battery

NASA Astrophysics Data System (ADS)

Mohamad, A. A.

The gel electrolyte for the zinc-air cell was prepared by mixing hydroponics gel with a 6 M potassium hydroxide aqueous solution. The self-discharge of cells was characterized by measuring the open-circuit voltage. The effect of a discharge rate of 50 mA constant current on cell voltage and plateau hour, as well as the voltage-current and current density-power density were measured and analysed. The electrode degradation after discharge cycling was characterized by structural and surface methods. The oxidation of the electrode surface further blocked the utilization of the Zn anode and was identified as a cause for the failure of the cell.

Design, Simulation and Characteristics Research of the Interface Circuit based on nano-polysilicon thin films pressure sensor

NASA Astrophysics Data System (ADS)

Zhao, Xiaosong; Zhao, Xiaofeng; Yin, Liang

2018-03-01

This paper presents a interface circuit for nano-polysilicon thin films pressure sensor. The interface circuit includes consist of instrument amplifier and Analog-to-Digital converter (ADC). The instrumentation amplifier with a high common mode rejection ratio (CMRR) is implemented by three stages current feedback structure. At the same time, in order to satisfy the high precision requirements of pressure sensor measure system, the 1/f noise corner of 26.5 mHz can be achieved through chopping technology at a noise density of 38.2 nV/sqrt(Hz).Ripple introduced by chopping technology adopt continuous ripple reduce circuit (RRL), which achieves the output ripple level is lower than noise. The ADC achieves 16 bits significant digit by adopting sigma-delta modulator with fourth-order single-bit structure and digital decimation filter, and finally achieves high precision integrated pressure sensor interface circuit.

A novel pilot-scale stacked microbial fuel cell for efficient electricity generation and wastewater treatment.

PubMed

Wu, Shijia; Li, Hui; Zhou, Xuechen; Liang, Peng; Zhang, Xiaoyuan; Jiang, Yong; Huang, Xia

2016-07-01

A novel stacked microbial fuel cell (MFC) which had a total volume of 72 L with granular activated carbon (GAC) packed bed electrodes was constructed and verified to present remarkable power generation and COD removal performance due to its advantageous design of stack and electrode configuration. During the fed-batch operation period, a power density of 50.9 ± 1.7 W/m(3) and a COD removal efficiency of 97% were achieved within 48 h. Because of the differences among MFC modules in the stack, reversal current occurred in parallel circuit connection with high external resistances (>100 Ω). This reversal current consequently reduced the electrochemical performance of some MFC modules and led to a lower power density in parallel circuit connection than that in independent circuit connection. While increasing the influent COD concentrations from 200 to 800 mg/L at hydraulic retention time of 1.25 h in continuous operation mode, the power density of stacked MFC increased from 25.6 ± 2.5 to 42.1 ± 1.2 W/m(3) and the COD removal rates increased from 1.3 to 5.2 kg COD/(m(3) d). This study demonstrated that this novel MFC stack configuration coupling with GAC packed bed electrode could be a feasible strategy to effectively scale up MFC systems. Copyright © 2016 Elsevier Ltd. All rights reserved.

Discontinuous Mode Power Supply

NASA Technical Reports Server (NTRS)

Lagadinos, John; Poulos, Ethel

2012-01-01

A document discusses the changes made to a standard push-pull inverter circuit to avoid saturation effects in the main inverter power supply. Typically, in a standard push-pull arrangement, the unsymmetrical primary excitation causes variations in the volt second integral of each half of the excitation cycle that could lead to the establishment of DC flux density in the magnetic core, which could eventually cause saturation of the main inverter transformer. The relocation of the filter reactor normally placed across the output of the power supply solves this problem. The filter reactor was placed in series with the primary circuit of the main inverter transformer, and is presented as impedance against the sudden changes on the input current. The reactor averaged the input current in the primary circuit, avoiding saturation of the main inverter transformer. Since the implementation of the described change, the above problem has not reoccurred, and failures in the main power transistors have been avoided.

Design optimization of GaAs betavoltaic batteries

NASA Astrophysics Data System (ADS)

Chen, Haiyanag; Jiang, Lan; Chen, Xuyuan

2011-06-01

GaAs junctions are designed and fabricated for betavoltaic batteries. The design is optimized according to the characteristics of GaAs interface states and the diffusion length in the depletion region of GaAs carriers. Under an illumination of 10 mCi cm-2 63Ni, the open circuit voltage of the optimized batteries is about ~0.3 V. It is found that the GaAs interface states induce depletion layers on P-type GaAs surfaces. The depletion layer along the P+PN+ junction edge isolates the perimeter surface from the bulk junction, which tends to significantly reduce the battery dark current and leads to a high open circuit voltage. The short circuit current density of the optimized junction is about 28 nA cm-2, which indicates a carrier diffusion length of less than 1 µm. The overall results show that multi-layer P+PN+ junctions are the preferred structures for GaAs betavoltaic battery design.

Integrated Power Adapter: Isolated Converter with Integrated Passives and Low Material Stress

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2010-09-01

ADEPT Project: CPES at Virginia Tech is developing an extremely efficient power converter that could be used in power adapters for small, lightweight laptops and other types of mobile electronic devices. Power adapters convert electrical energy into useable power for an electronic device, and they currently waste a lot of energy when they are plugged into an outlet to power up. CPES at Virginia Tech is integrating high-density capacitors, new magnetic materials, high-frequency integrated circuits, and a constant-flux transformer to create its efficient power converter. The high-density capacitors enable the power adapter to store more energy. The new magnetic materialsmore » also increase energy storage, and they can be precisely dispensed using a low-cost ink-jet printer which keeps costs down. The high-frequency integrated circuits can handle more power, and they can handle it more efficiently. And, the constant-flux transformer processes a consistent flow of electrical current, which makes the converter more efficient.« less

Plasmonic excitation-assisted optical and electric enhancement in ultra-thin solar cells: the influence of nano-strip cross section

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sabaeian, Mohammad, E-mail: sabaiean@scu.ac.ir; Heydari, Mehdi; Ajamgard, Narges

The effects of Ag nano-strips with triangle, rectangular and trapezoid cross sections on the optical absorption, generation rate, and short-circuit current density of ultra-thin solar cells were investigated. By putting the nano-strips as a grating structure on the top of the solar cells, the waveguide, surface plasmon polariton (SPP), and localized surface plasmon (LSP) modes, which are excited with the assistance of nano-strips, were evaluated in TE and TM polarizations. The results show, firstly, the TM modes are more influential than TE modes in optical and electrical properties enhancement of solar cell, because of plasmonic excitations in TM mode. Secondly,more » the trapezoid nano-strips reveal noticeable impact on the optical absorption, generation rate, and short-circuit current density enhancement than triangle and rectangular ones. In particular, the absorption of long wavelengths which is a challenge in ultra-thin solar cells is significantly improved by using Ag trapezoid nano-strips.« less

A theoretical analysis of the current-voltage characteristics of solar cells

NASA Technical Reports Server (NTRS)

Fang, R. C. Y.; Hauser, J. R.

1979-01-01

The following topics are discussed: (1) dark current-voltage characteristics of solar cells; (2) high efficiency silicon solar cells; (3) short circuit current density as a function of temperature and the radiation intensity; (4) Keldysh-Franz effects and silicon solar cells; (5) thin silicon solar cells; (6) optimum solar cell designs for concentrated sunlight; (7) nonuniform illumination effects of a solar cell; and (8) high-low junction emitter solar cells.

Laser-induced electron source in a vacuum diode

NASA Astrophysics Data System (ADS)

Ghera, U.; Boxman, R. L.; Kleinman, H.; Ruschin, S.

1989-11-01

Experiments were conducted in which a high-power CO2 TEA laser interacted with metallic cathode in a high-vacuum (10 to the -8th Torr) diode. For power densities lower than 5 x 10 to the 7th W/sq cm, no current was detected. For power densities in the range of 5 x 10 to the 7th to 5 x 10 to the 8th W/sq cm, the Cu cathode emitted a maximum current of 40 mA. At a higher power density level, a circuit-limited current of 8 A was detected. The jump of a few orders of magnitude in the current is attributed to breakdown of the diode gap. The experimental results are similar to those of a triggered vacuum gap, and a thorough comparison is presented in this paper. The influence of the pressure in the vacuum chamber on the current magnitude shows the active role that adsorbed gas molecules have in the initial breakdown. When the cathode material was changed from metal to metal oxide, much lower laser power densities were required to reach the breakdown current region.

Design and optimization of ARC less InGaP/GaAs single-/multi-junction solar cells with tunnel junction and back surface field layers

NASA Astrophysics Data System (ADS)

Chee, Kuan W. A.; Hu, Yuning

2018-07-01

There has always been an inexorable interest in the solar industry in boosting the photovoltaic conversion efficiency. This paper presents a theoretical and numerical simulation study of the effects of key design parameters on the photoelectric performance of single junction (InGaP- or GaAs-based) and dual junction (InGaP/GaAs) inorganic solar cells. The influence of base layer thickness, base doping concentration, junction temperature, back surface field layer composition and thickness, and tunnel junction material, were correlated with open circuit voltage, short-circuit current, fill factor and power conversion efficiency performance. The InGaP/GaAs dual junction solar cell was optimized with the tunnel junction and back surface field designs, yielding a short-circuit current density of 20.71 mAcm-2 , open-circuit voltage of 2.44 V and fill factor of 88.6%, and guaranteeing an optimal power conversion efficiency of at least 32.4% under 1 sun AM0 illumination even without an anti-reflective coating.

The auroral current circuit and field-aligned currents observed by FAST

NASA Astrophysics Data System (ADS)

Elphic, R. C.; Bonnell, J. W.; Strangeway, R. J.; Kepko, L.; Ergun, R. E.; McFadden, J. P.; Carlson, C. W.; Peria, W.; Cattell, C. A.; Klumpar, D.; Shelley, E.; Peterson, W.; Moebius, E.; Kistler, L.; Pfaff, R.

FAST observes signatures of small-scale downward-going current at the edges of the inverted-V regions where the primary (auroral) electrons are found. In the winter pre-midnight auroral zone these downward currents are carried by upward flowing low- and medium-energy (up to several keV) electron beams. FAST instrumentation shows agreement between the current densities inferred from both the electron distributions and gradients in the magnetic field. FAST data taken near apogee (˜4000-km altitude) commonly show downward current magnetic field deflections consistent with the observed upward flux of ˜109 electrons cm-2 s-1, or current densities of several µA m-2. The electron, field-aligned current and electric field signatures indicate the downward currents may be associated with “black aurora” and auroral ionospheric cavities. The field-aligned voltage-current relationship in the downward current region is nonlinear.

Al embedded MgO barrier MTJ: A first principle study for application in fast and compact STT-MRAMs

NASA Astrophysics Data System (ADS)

Yadav, Manoj Kumar; Gupta, Santosh Kumar; Rai, Sanjeev; Pandey, Avinash C.

2017-03-01

The first principle comparative study of a novel single Al sheet embedded MgO and pure MgO barrier having Fe electrodes magnetic tunnel junction has been presented. Al embedded MgO is reported to provide enhanced spin polarised tunnelling current due to increase of spin-polarized density of states at Fermi energy in the barrier region. This novel MTJ provides a current density and resistance area (RA) product of 94.497 ×107 A / cm2 and 0.105  Ω - μm2 respectively. With such a low RA product; it allows higher deriving current due to which switching time of magnetization reversal reduces without inducing barrier related breakdowns in non-volatile magnetic random access memories. The low RA product and high current density of the proposed MTJ may have possible applications in integration with existing MOS circuits.

High density electronic circuit and process for making

DOEpatents

Morgan, William P.

1999-01-01

High density circuits with posts that protrude beyond one surface of a substrate to provide easy mounting of devices such as integrated circuits. The posts also provide stress relief to accommodate differential thermal expansion. The process allows high interconnect density with fewer alignment restrictions and less wasted circuit area than previous processes. The resulting substrates can be test platforms for die testing and for multi-chip module substrate testing. The test platform can contain active components and emulate realistic operational conditions, replacing shorts/opens net testing.

Inverted organic photovoltaic device with a new electron transport layer

NASA Astrophysics Data System (ADS)

Kim, Hyeong Pil; Yusoff, Abd Rashid bin Mohd; Kim, Hyo Min; Lee, Hee Jae; Seo, Gi Jun; Jang, Jin

2014-03-01

We demonstrate that there is a new solution-processed electron transport layer, lithium-doped zinc oxide (LZO), with high-performance inverted organic photovoltaic device. The device exhibits a fill factor of 68.58%, an open circuit voltage of 0.86 V, a short-circuit current density of -9.35 cm/mA2 along with 5.49% power conversion efficiency. In addition, we studied the performance of blend ratio dependence on inverted organic photovoltaics. Our device also demonstrates a long stability shelf life over 4 weeks in air.

Optical diagnostics of the arc plasma using fast intensified CCD-spectrograph system

NASA Astrophysics Data System (ADS)

Pavelescu, Gabriela; Guillot, Stephane; Braic, Mariana T.; Hong, Dunpin; Pavelescu, D.; Fleurier, Claude; Braic, Viorel; Gherendi, F.; Dumitrescu, G.; Anghelita, P.; Bauchire, J. M.

2004-10-01

Spectroscopic diagnostics, using intensified high speed CCD camera, was applied to study the arc dynamics in low voltage circuit breakers, in vacuum and in air. Time-resolved emission spectroscopy of the vacuum arc plasma, generated during electrode separation, provided information about the interruption process. The investigations were focused on the partial unsuccessful interruption around current zero. Absorption spectroscopy, in a peculiar setup, was used in order to determine the metallic atoms densities in the interelectrode space of a low voltage circuit breaker, working in ambient air.

Transmission-line-circuit model of an 85-TW, 25-MA pulsed-power accelerator

NASA Astrophysics Data System (ADS)

Hutsel, B. T.; Corcoran, P. A.; Cuneo, M. E.; Gomez, M. R.; Hess, M. H.; Hinshelwood, D. D.; Jennings, C. A.; Laity, G. R.; Lamppa, D. C.; McBride, R. D.; Moore, J. K.; Myers, A.; Rose, D. V.; Slutz, S. A.; Stygar, W. A.; Waisman, E. M.; Welch, D. R.; Whitney, B. A.

2018-03-01

We have developed a physics-based transmission-line-circuit model of the Z pulsed-power accelerator. The 33-m-diameter Z machine generates a peak electrical power as high as 85 TW, and delivers as much as 25 MA to a physics load. The circuit model is used to design and analyze experiments conducted on Z. The model consists of 36 networks of transmission-line-circuit elements and resistors that represent each of Zs 36 modules. The model of each module includes a Marx generator, intermediate-energy-storage capacitor, laser-triggered gas switch, pulse-forming line, self-break water switches, and tri-plate transmission lines. The circuit model also includes elements that represent Zs water convolute, vacuum insulator stack, four parallel outer magnetically insulated vacuum transmission lines (MITLs), double-post-hole vacuum convolute, inner vacuum MITL, and physics load. Within the vacuum-transmission-line system the model conducts analytic calculations of current loss. To calculate the loss, the model simulates the following processes: (i) electron emission from MITL cathode surfaces wherever an electric-field threshold has been exceeded; (ii) electron loss in the MITLs before magnetic insulation has been established; (iii) flow of electrons emitted by the outer-MITL cathodes after insulation has been established; (iv) closure of MITL anode-cathode (AK) gaps due to expansion of cathode plasma; (v) energy loss to MITL conductors operated at high lineal current densities; (vi) heating of MITL-anode surfaces due to conduction current and deposition of electron kinetic energy; (vii) negative-space-charge-enhanced ion emission from MITL anode surfaces wherever an anode-surface-temperature threshold has been exceeded; and (viii) closure of MITL AK gaps due to expansion of anode plasma. The circuit model is expected to be most accurate when the fractional current loss is small. We have performed circuit simulations of 52 Z experiments conducted with a variety of accelerator configurations and load-impedance time histories. For these experiments, the apparent fractional current loss varies from 0% to 20%. Results of the circuit simulations agree with data acquired on 52 shots to within 2%.

Self-amplified CMOS image sensor using a current-mode readout circuit

NASA Astrophysics Data System (ADS)

Santos, Patrick M.; de Lima Monteiro, Davies W.; Pittet, Patrick

2014-05-01

The feature size of the CMOS processes decreased during the past few years and problems such as reduced dynamic range have become more significant in voltage-mode pixels, even though the integration of more functionality inside the pixel has become easier. This work makes a contribution on both sides: the possibility of a high signal excursion range using current-mode circuits together with functionality addition by making signal amplification inside the pixel. The classic 3T pixel architecture was rebuild with small modifications to integrate a transconductance amplifier providing a current as an output. The matrix with these new pixels will operate as a whole large transistor outsourcing an amplified current that will be used for signal processing. This current is controlled by the intensity of the light received by the matrix, modulated pixel by pixel. The output current can be controlled by the biasing circuits to achieve a very large range of output signal levels. It can also be controlled with the matrix size and this permits a very high degree of freedom on the signal level, observing the current densities inside the integrated circuit. In addition, the matrix can operate at very small integration times. Its applications would be those in which fast imaging processing, high signal amplification are required and low resolution is not a major problem, such as UV image sensors. Simulation results will be presented to support: operation, control, design, signal excursion levels and linearity for a matrix of pixels that was conceived using this new concept of sensor.

Magnetic-Flux-Compensated Voltage Divider

NASA Technical Reports Server (NTRS)

Mata, Carlos T.

2005-01-01

A magnetic-flux-compensated voltage-divider circuit has been proposed for use in measuring the true potential across a component that is exposed to large, rapidly varying electric currents like those produced by lightning strikes. An example of such a component is a lightning arrester, which is typically exposed to currents of the order of tens of kiloamperes, having rise times of the order of hundreds of nanoseconds. Traditional voltage-divider circuits are not designed for magnetic-flux-compensation: They contain uncompensated loops having areas large enough that the transient magnetic fluxes associated with large transient currents induce spurious voltages large enough to distort voltage-divider outputs significantly. A drawing of the proposed circuit was not available at the time of receipt of information for this article. What is known from a summary textual description is that the proposed circuit would contain a total of four voltage dividers: There would be two mixed dividers in parallel with each other and with the component of interest (e.g., a lightning arrester), plus two mixed dividers in parallel with each other and in series with the component of interest in the same plane. The electrical and geometric configuration would provide compensation for induced voltages, including those attributable to asymmetry in the volumetric density of the lightning or other transient current, canceling out the spurious voltages and measuring the true voltage across the component.

Achieving High Current Density of Perovskite Solar Cells by Modulating the Dominated Facets of Room-Temperature DC Magnetron Sputtered TiO2 Electron Extraction Layer.

PubMed

Huang, Aibin; Lei, Lei; Zhu, Jingting; Yu, Yu; Liu, Yan; Yang, Songwang; Bao, Shanhu; Cao, Xun; Jin, Ping

2017-01-25

The short circuit current density of perovskite solar cell (PSC) was boosted by modulating the dominated plane facets of TiO 2 electron transport layer (ETL). Under optimized condition, TiO 2 with dominant {001} facets showed (i) low incident light loss, (ii) highly smooth surface and excellent wettability for precursor solution, (iii) efficient electron extraction, and (iv) high conductivity in perovskite photovoltaic application. A current density of 24.19 mA cm -2 was achieved as a value near the maximum limit. The power conversion efficiency was improved to 17.25%, which was the record value of PSCs with DC magnetron sputtered carrier transport layer. What is more, the room-temperature process had a great significance for the cost reduction and flexible application of PSCs.

Enhancement of Open-Circuit Voltage by Using the 58-π Silylmethyl Fullerenes in Small-Molecule Organic Solar Cells.

PubMed

Jeon, Il; Delacou, Clément; Nakagawa, Takafumi; Matsuo, Yutaka

2016-04-20

The application of 58-π-1,4-bis(silylmethyl)[60]fullerenes, C60 (CH2 SiMe2 Ph)(CH2 SiMe2 Ar) (Ar=Ph and 2-methoxylphenyl for SIMEF-1 and SIMEF-2, respectively), in small-molecule organic solar cells with a diketopyrrolopyrrole donor (3,6-bis[5-(benzofuran-2-yl)thiophen-2-yl]-2,5-bis(2-ethylhexyl)pyrrolo[3,4-c]pyrrole-1,4-dione (DPP(TBFu)2 )) is demonstrated. With the 58-π-silylmethyl fullerene acceptor, SIMEF-1, the devices showed the highest efficiency of 4.57 % with an average of 4.10 %. They manifested an improved open-circuit voltage (1.03 V) owing to the high-lying LUMO level of SIMEF-1, while maintaining a high short-circuit density (9.91 mA cm(-2) ) through controlling the crystallinity of DPP by thermal treatment. On the other hand, despite even higher open-circuit voltage (1.05 V), SIMEF-2-based devices showed lower performances of 3.53 %, owing to a low short-circuit current density (8.33 mA cm(-2) ) and fill factor (0.40) arising from the asymmetric structure, which results in a lower mobility and immiscibility. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High power broadband millimeter wave TWTs

NASA Astrophysics Data System (ADS)

James, Bill G.

1999-05-01

In the early 1980's the requirement for high power broadband millimeter wave sources encouraged the development of microwave vacuum device amplifiers for radar and communication systems. Many government funded programs were implemented for the development of high power broadband millimeter wave amplifiers that would meet the needs of the high power community. The tube design capable of meeting these goals was the slow wave coupled cavity traveling wave device, which had a proven technology base at the lower frequencies (X Band). However scaling this technology to the millimeter frequencies had severe shortcomings in both thermal and manufacturing design. These shortcomings were overcome with the development of the Ladder Circuit technology. In conjunction with the circuit development high power electron beam systems had to be developed for the generation of high rf powers. These beam systems had to be capable of many megawatts of beam power density and high current densities. The cathode technology required to be capable of operating at current densities of 10 amperes per square centimeter at long pulse lengths and high duty cycle. Since the introduction of the Ladder Circuit technology a number of high power broadband millimeter wave amplifiers have been developed using this technology, and have been deployed in operating radar and communication systems. Broadband millimeter wave sources have been manufactured in the frequency range from 27 GHz to 100 GHz with power levels ranging from 100 watts to 50 kilowatts. Today the power levels achieved by these devices are nearing the limits of this technology; therefore to gain a significant increase in power at the millimeter wave frequencies other technologies will have to be considered particularly fast wave devices. This paper will briefly review the ladder circuit technology and present the designs of a number of broadband high power devices developed at Ka and W band. The discussion will include the beam systems employed in these devices which are the highest power density linear beams generated to date. In conclusion the limits of the power generating capability of this technology will be presented.

High Power Broadband Millimeter Wave TWTs

NASA Astrophysics Data System (ADS)

James, Bill G.

1998-04-01

In the early 1980's the requirement for high power broadband millimeter wave sources encouraged the development of microwave vacuum device amplifiers for radar and communication systems. Many government funded programs were implemented for the development of high power broadband millimeter wave amplifiers that would meet the needs of the high power community. The tube design capable of meeting these goals was the slow wave coupled cavity traveling wave device, which had a proven technology base at the lower frequencies (X Band). However scaling this technology to the millimeter frequencies had severe shortcomings in both thermal and manufacturing design. These shortcomings were overcome with the development of the Ladder Circuit technology. In conjunction with the circuit development high power electron beam systems had to be developed for the generation of high rf powers. These beam systems had to be capable of many megawatts of beam power density and high current densities. The cathode technology required to be capable of operating at current densities of 10 amperes per square centimeter at long pulse lengths and high duty cycle. Since the introduction of the Ladder Circuit technology a number of high power broadband millimeter wave amplifiers have been developed and deployed in operating radar and communication systems. Broadband millimeter wave sources have been manufactured in the frequency range from 27 GHz to 100 GHz with power levels ranging from 100 watts CW to 10 kilowatts Peak at W band over a 2 GHz bandwidth. Also a 50 kW peak power and 10 kW average power device at Ka band with 2 GHz bandwidth has been developed. Today the power levels achieved by these devices are nearing the limits of this technology; therefore to gain a significant increase in power at the millimeter wave frequencies, other technologies will have to be considered, particularly fast wave devices. This paper will briefly review the ladder circuit technology and present the designs of a number of broadband high power devices developed at Ka and W band. The discussion will include the beam systems employed in these devices which are the highest power density linear beams generated to date. In conclusion the limits of the power generating capability of this technology will be presented.

Measurement of toroidal vessel eddy current during plasma disruption on J-TEXT.

PubMed

Liu, L J; Yu, K X; Zhang, M; Zhuang, G; Li, X; Yuan, T; Rao, B; Zhao, Q

2016-01-01

In this paper, we have employed a thin, printed circuit board eddy current array in order to determine the radial distribution of the azimuthal component of the eddy current density at the surface of a steel plate. The eddy current in the steel plate can be calculated by analytical methods under the simplifying assumptions that the steel plate is infinitely large and the exciting current is of uniform distribution. The measurement on the steel plate shows that this method has high spatial resolution. Then, we extended this methodology to a toroidal geometry with the objective of determining the poloidal distribution of the toroidal component of the eddy current density associated with plasma disruption in a fusion reactor called J-TEXT. The preliminary measured result is consistent with the analysis and calculation results on the J-TEXT vacuum vessel.

Influence of excitons interaction with charge carriers on photovoltaic parameters in organic solar cells

NASA Astrophysics Data System (ADS)

Głowienka, Damian; Szmytkowski, Jędrzej

2018-03-01

We report on theoretical analysis of excitons annihilation on charge carriers in organic solar cells. Numerical calculations based on transient one-dimensional drift-diffusion model have been carried out. An impact of three quantities (an annihilation rate constant, an exciton mobility and a recombination reduction factor) on current density and concentrations of charge carriers and excitons is investigated. Finally, we discuss the influence of excitons interaction with electrons and holes on four photovoltaic parameters (a short-circuit current, an open-circuit voltage, a fill factor and a power conversion efficiency). The conclusion is that the annihilation process visibly decreases the efficiency of organic photocells, if the annihilation rate constant is greater than 10-15m3s-1 .

Structural, electrical and photovoltaic properties of CoS/Si heterojunction prepared by spray pyrolysis

NASA Astrophysics Data System (ADS)

El Radaf, I. M.; Nasr, Mahmoud; Mansour, A. M.

2018-01-01

Au/p-CoS/n-Si/Al heterojunction device was fabricated by spray pyrolysis technique. The structural and morphological features were examined by x-ray diffraction, scanning electron microscope and energy dispersive x-ray analysis. The capacitance-voltage characteristics of the prepared heterojunction were analyzed at room temperature in the dark. The current-voltage characteristics were examined under dark and different incident light intensities 20-100 mW cm-2. The rectification ratio, series resistance, shunt resistance, diode ideality factor and the effective barrier height were determined at dark and illumination conditions. The photovoltaic parameters such as short circuit current density, open circuit voltage, fill factor and power conversion efficiency were calculated at different incident light intensities.

Experimental study on magnetically insulated transmission line electrode surface evolution process under MA/cm current density

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, PengFei; Qiu, Aici; State Key Laboratory of Intense Pulse Radiation of Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024

The design of high-current density magnetically insulated transmission line (MITL) is a difficult problem of current large-scale Z-pinch device. In particular, a thorough understanding of the MITL electrode surface evolution process under high current density is lacking. On the “QiangGuang-I” accelerator, the load area possesses a low inductance short-circuit structure with a diameter of 2.85 mm at the cathode, and three reflux columns with a diameter of 3 mm and uniformly distributed circumference at the anode. The length of the high density MITL area is 20 mm. A laser interferometer is used to assess and analyze the state of the MITL cathode andmore » anode gap, and their evolution process under high current density. Experimental results indicate that evident current loss is not observed in the current density area at pulse leading edge, and peak when the surface current density reaches MA/cm. Analysis on electrode surface working conditions indicates that when the current leading edge is at 71.5% of the peak, the total evaporation of MITL cathode structure can be realized by energy deposition caused by ohmic heating. The electrode state changes, and diffusion conditions are reflected in the laser interferometer image. The MITL cathode area mainly exists in metal vapor form. The metal vapor density in the cathode central region is higher than the upper limit of laser penetration density (∼4 × 10{sup 21}/cm{sup 3}), with an expansion velocity of ∼0.96 km/s. The metal vapor density in the electrode outer area may lead to evident distortion of fringes, and its expansion velocity is faster than that in the center area (1.53 km/s).« less

High density electronic circuit and process for making

DOEpatents

Morgan, W.P.

1999-06-29

High density circuits with posts that protrude beyond one surface of a substrate to provide easy mounting of devices such as integrated circuits are disclosed. The posts also provide stress relief to accommodate differential thermal expansion. The process allows high interconnect density with fewer alignment restrictions and less wasted circuit area than previous processes. The resulting substrates can be test platforms for die testing and for multi-chip module substrate testing. The test platform can contain active components and emulate realistic operational conditions, replacing shorts/opens net testing. 8 figs.

Nanoconstriction spin-Hall oscillator with perpendicular magnetic anisotropy

NASA Astrophysics Data System (ADS)

Divinskiy, B.; Demidov, V. E.; Kozhanov, A.; Rinkevich, A. B.; Demokritov, S. O.; Urazhdin, S.

2017-07-01

We experimentally study spin-Hall nano-oscillators based on [Co/Ni] multilayers with perpendicular magnetic anisotropy. We show that these devices exhibit single-frequency auto-oscillations at current densities comparable to those for in-plane magnetized oscillators. The demonstrated oscillators exhibit large magnetization precession amplitudes, and their oscillation frequency is highly tunable by the electric current. These features make them promising for applications in high-speed integrated microwave circuits.

Metal-Insulator-Semiconductor Nanowire Network Solar Cells.

PubMed

Oener, Sebastian Z; van de Groep, Jorik; Macco, Bart; Bronsveld, Paula C P; Kessels, W M M; Polman, Albert; Garnett, Erik C

2016-06-08

Metal-insulator-semiconductor (MIS) junctions provide the charge separating properties of Schottky junctions while circumventing the direct and detrimental contact of the metal with the semiconductor. A passivating and tunnel dielectric is used as a separation layer to reduce carrier recombination and remove Fermi level pinning. When applied to solar cells, these junctions result in two main advantages over traditional p-n-junction solar cells: a highly simplified fabrication process and excellent passivation properties and hence high open-circuit voltages. However, one major drawback of metal-insulator-semiconductor solar cells is that a continuous metal layer is needed to form a junction at the surface of the silicon, which decreases the optical transmittance and hence short-circuit current density. The decrease of transmittance with increasing metal coverage, however, can be overcome by nanoscale structures. Nanowire networks exhibit precisely the properties that are required for MIS solar cells: closely spaced and conductive metal wires to induce an inversion layer for homogeneous charge carrier extraction and simultaneously a high optical transparency. We experimentally demonstrate the nanowire MIS concept by using it to make silicon solar cells with a measured energy conversion efficiency of 7% (∼11% after correction), an effective open-circuit voltage (Voc) of 560 mV and estimated short-circuit current density (Jsc) of 33 mA/cm(2). Furthermore, we show that the metal nanowire network can serve additionally as an etch mask to pattern inverted nanopyramids, decreasing the reflectivity substantially from 36% to ∼4%. Our extensive analysis points out a path toward nanowire based MIS solar cells that exhibit both high Voc and Jsc values.

Growth and analysis of micro and nano CdTe arrays for solar cell applications

NASA Astrophysics Data System (ADS)

Aguirre, Brandon Adrian

CdTe is an excellent material for infrared detectors and photovoltaic applications. The efficiency of CdTe/CdS solar cells has increased very rapidly in the last 3 years to ˜20% but is still below the maximum theoretical value of 30%. Although the short-circuit current density is close to its maximum of 30 mA/cm2, the open circuit voltage has potential to be increased further to over 1 Volt. The main limitation that prevents further increase in the open-circuit voltage and therefore efficiency is the high defect density in the CdTe absorber layer. Reducing the defect density will increase the open-circuit voltage above 1 V through an increase in the carrier lifetime and concentration to tau >10 ns and p > 10 16 cm-3, respectively. However, the large lattice mismatch (10%) between CdTe and CdS and the polycrystalline nature of the CdTe film are the fundamental reasons for the high defect density and pose a difficult challenge to solve. In this work, a method to physically and electrically isolate the different kinds of defects at the nanoscale and understand their effect on the electrical performance of CdTe is presented. A SiO2 template with arrays of window openings was deposited between the CdTe and CdS to achieve selective-area growth of the CdTe via close-space sublimation. The diameter of the window openings was varied from the micro to the nanoscale to study the effect of size on nucleation, grain growth, and defect density. The resulting structures enabled the possibility to electrically isolate and individually probe micrometer and nanoscale sized CdTe/CdS cells. Electron back-scattered diffraction was used to observe grain orientation and defects in the miniature cells. Scanning and transmission electron microscopy was used to study the morphology, grain boundaries, grain orientation, defect structure, and strain in the layers. Finally, conducting atomic force microscopy was used to study the current-voltage characteristics of the solar cells. An important part of this work was the ability to directly correlate the one-to-one relationship between the electrical performance and defect structure of individual nanoscale cells. This method is general and can be applied to other material systems to study the electrical-microstructure relationship on a one-to-one basis with nanoscale resolution.

Preparation and photovoltaic properties of perovskite solar cell based on ZnO nanorod arrays

NASA Astrophysics Data System (ADS)

Xu, Yang; Liu, Tian; Li, Zhaosong; Feng, Bingjie; Li, Siqian; Duan, Jinxia; Ye, Cong; Zhang, Jun; Wang, Hao

2016-12-01

A careful control of ZnO nanorod arrays with various densities and thickness were achieved by hydrothermal method. An obvious increase in the ZnO nanorod density is observed as the concentrations of zinc acetate dropped as expected through the surface SEM images. On the other hand, samples with and without TiO2 compact layer were also studied and results had been analyzed to seek for an optimized substrate structure for light absorbing layer and increase the efficiency. What's more, a deep research for the drying temperature for perovskite layer was also conducted. As a result, SEM images discribe a promising surface appearance of perovskite layer which is finely attached onto the nanorod structure. Final power conversion efficiency (PCE) of FTO/ZnO seed layer/ZnO nanorods/perovskite/spiro-OMe-TAD/Au electrode photovoltaic device reached ∼9.15% together with open-circuit voltage of 957 mV, short-circuit current density of 17.8 mA/cm2 and fill factor of 0.537.

Incorporation of Ca and P on anodized titanium surface: Effect of high current density.

PubMed

Laurindo, Carlos A H; Torres, Ricardo D; Mali, Sachin A; Gilbert, Jeremy L; Soares, Paulo

2014-04-01

This study systematically evaluated the surface and corrosion characteristics of commercially pure titanium (grade 2) modified by plasma electrolytic oxidation (PEO) with high current density. The anodization process was carried out galvanostatically (constant current density) using a solution containing calcium glycerophosphate (0.02mol/L) and calcium acetate (0.15mol/L). The current densities applied were 400, 700, 1000 and 1200mA/cm(2) for a period of 15s. Composition, crystalline structure, morphology, roughness, wettability and "in-vitro" bioactivity test in SBF of the anodized layer were evaluated by X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy, profilometry and contact angle measurements. Corrosion properties were evaluated by open circuit potential, electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization measurements. The results show that the TiO2 oxide layers present an increase of thickness, porosity, roughness, wettability, Ca/P ratio, and bioactivity, with the applied current density up to 1000mA/cm(2). Corrosion resistance also increases with applied current density. It is observed that for 1200mA/cm(2), there is a degradation of the oxide layer. In general, the results suggest that the anodized TiO2 layer with better properties is formed with an applied current of 1000mA/cm(2). Copyright © 2014 Elsevier B.V. All rights reserved.

Characteristics of switching plasma in an inverse-pinch switch

NASA Technical Reports Server (NTRS)

Lee, Ja H.; Choi, Sang H.; Venable, Demetrius D.; Han, Kwang S.; Nam, Sang H.

1993-01-01

Characteristics of the plasma that switches on tens of giga volt-ampere in an inverse-pinch plasma switch (INPIStron) have been made. Through optical and spectroscopic diagnostics of the current carrying plasma, the current density, the motion of current paths, dominant ionic species have been determined in order to access their effects on circuit parameters and material erosion. Also the optimum operational condition of the plasma-puff triggering method required for azimuthally uniform conduction in the INPIStron has been determined.

Classical Hall Effect without Magnetic Field

NASA Astrophysics Data System (ADS)

Schade, Nicholas; Tao, Chiao-Yu; Schuster, David; Nagel, Sidney

We show that the sign and density of charge carriers in a material can be obtained without the presence of a magnetic field. This effect, analogous to the classical Hall effect, is due solely to the geometry of the current-carrying wire. When current flows, surface charges along the wire create small electric fields that direct the current to follow the path of the conductor. In a curved wire, the charge carriers must experience a centripetal force, which arises from an electric field perpendicular to the drift velocity. This electric field produces a potential difference between the sides of the wire that depends on the sign and density of the charge carriers. We experimentally investigate circuits made from superconductors or graphene to find evidence for this effect.

One-dimensional particle-in-cell simulation on the influence of electron and ion temperature on the sheath expansion process in the post-arc stage of vacuum circuit breaker

NASA Astrophysics Data System (ADS)

Mo, Yongpeng; Shi, Zongqian; Jia, Shenli; Wang, Lijun

2015-02-01

The inter-contact region of vacuum circuit breakers is filled with residual plasma at the moment when the current is zero after the burning of metal vapor arc. The residual plasma forms an ion sheath in front of the post-arc cathode. The sheath then expands towards the post-arc anode under the influence of a transient recovery voltage. In this study, a one-dimensional particle-in-cell model is developed to investigate the post-arc sheath expansion. The influence of ion and electron temperatures on the decrease in local plasma density at the post-arc cathode side and post-arc anode side is discussed. When the decay in the local plasma density develops from the cathode and anode sides into the high-density region and merges, the overall plasma density in the inter-contact region begins to decrease. Meanwhile, the ion sheath begins to expand faster. Furthermore, the theory of ion rarefaction wave only explains quantitatively the decrease in the overall plasma density at relatively low ion temperatures. With the increase of ion temperature to certain extent, another possible reason for the decrease in the overall plasma density is proposed and results from the more active thermal diffusion of plasma.

The Alkali Metal Thermal-To-Electric Converter for Solar System Exploration

NASA Technical Reports Server (NTRS)

Ryan, M.

1999-01-01

AMTEC, the Alkali Metal Thermal to Electric Converter, is a direct thermal to electric energy conversion device; it has been demostrated to perform at high power densities, with open circuit voltages in single electrochemical cells up to 1.6 V and current desities up to 2.0 A/cm(sup 2).

2.3 µm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit.

PubMed

Wang, Ruijun; Sprengel, Stephan; Boehm, Gerhard; Muneeb, Muhammad; Baets, Roel; Amann, Markus-Christian; Roelkens, Gunther

2016-09-05

Heterogeneously integrated InP-based type-II quantum well Fabry-Perot lasers on a silicon waveguide circuit emitting in the 2.3 µm wavelength range are demonstrated. The devices consist of a "W"-shaped InGaAs/GaAsSb multi-quantum-well gain section, III-V/silicon spot size converters and two silicon Bragg grating reflectors to form the laser cavity. In continuous-wave (CW) operation, we obtain a threshold current density of 2.7 kA/cm² and output power of 1.3 mW at 5 °C for 2.35 μm lasers. The lasers emit over 3.7 mW of peak power with a threshold current density of 1.6 kA/cm² in pulsed regime at room temperature. This demonstration of heterogeneously integrated lasers indicates that the material system and heterogeneous integration method are promising to realize fully integrated III-V/silicon photonics spectroscopic sensors in the 2 µm wavelength range.

Mesoscale modeling of photoelectrochemical devices: light absorption and carrier collection in monolithic, tandem, Si|WO3 microwires.

PubMed

Fountaine, Katherine T; Atwater, Harry A

2014-10-20

We analyze mesoscale light absorption and carrier collection in a tandem junction photoelectrochemical device using electromagnetic simulations. The tandem device consists of silicon (E(g,Si) = 1.1 eV) and tungsten oxide (E(g,WO3) = 2.6 eV) as photocathode and photoanode materials, respectively. Specifically, we investigated Si microwires with lengths of 100 µm, and diameters of 2 µm, with a 7 µm pitch, covered vertically with 50 µm of WO3 with a thickness of 1 µm. Many geometrical variants of this prototypical tandem device were explored. For conditions of illumination with the AM 1.5G spectra, the nominal design resulted in a short circuit current density, J(SC), of 1 mA/cm(2), which is limited by the WO3 absorption. Geometrical optimization of photoanode and photocathode shape and contact material selection, enabled a three-fold increase in short circuit current density relative to the initial design via enhanced WO3 light absorption. These findings validate the usefulness of a mesoscale analysis for ascertaining optimum optoelectronic performance in photoelectrochemical devices.

Effects of sodium and potassium on the photovoltaic performance of CIGS solar cells

DOE PAGES

Raguse, John M.; Muzzillo, Christopher P.; Sites, James R.; ...

2016-11-17

Here, the deliberate introduction of K and Na into Cu(In, Ga)Se 2 (CIGS) absorbers was investigated by varying a combination of an SiO 2 diffusion barrier, coevaporation of KF with the CIGS absorber, and a KF postdeposition treatment (PDT). Devices made with no diffusion barrier and KF coevaporation treatment exhibited the highest photovoltaic conversion efficiency with the smallest overall distribution in key current density-voltage (J-V) performance metrics. Out-diffusion of Na and K from the substrate, KF coevaporation, and KF PDT all increased carrier concentration, open-circuit voltage, fill factor, and power conversion efficiency. Quantum-efficiency analysis of devices highlighted the greatest lossmore » in the short-circuit current density due to incomplete absorption and collection. Secondary ion mass spectrometry illustrated the efficacy of the SiO 2 film as a sodium and potassium diffusion barrier, as well as their relative concentration in the absorber. Introduction of KF appeared to enhance diffusion of Na from the substrate, in agreement with previous studies.« less

Towards maximizing the haze effect of electrodes for high efficiency hybrid tandem solar cell

NASA Astrophysics Data System (ADS)

Vincent, Premkumar; Song, Dong-Seok; Kwon, Hyeok Bin; Kim, Do-Kyung; Jung, Ji-Hoon; Kwon, Jin-Hyuk; Choe, Eunji; Kim, Young-Rae; Kim, Hyeok; Bae, Jin-Hyuk

2018-02-01

In this study, we executed optical simulations to compute the optimum power conversion efficiency (PCE) of a-Si:H/organic photovoltaic (OPV) hybrid tandem solar cell. The maximum ideal short circuit current density (Jsc,max) of the tandem solar cell is initially obtained by optimizing the thickness of the active layer of the OPV subcell for varying thickness of the a-Si:H bottom subcell. To investigate the effect of Haze parameter on the ideal short-circuit current density (Jsc,ideal) of the solar cells, we have varied the haze ratio for the TCO electrode of the a-Si:H subcell in the tandem structure. The haze ratio was obtained for various root mean square (RMS) roughness of the TCO of the front cell. The effect of haze ratio on the Jsc,ideal on the tandem structured solar cell was studied, and the highest Jsc,ideal was obtained at a haze of 55.5% when the thickness of the OPV subcell was 150 nm and that of the a-Si:H subcell was 500 nm.

Fiber-based architectures for organic photovoltaics

NASA Astrophysics Data System (ADS)

Liu, Jiwen; Namboothiry, Manoj A. G.; Carroll, David L.

2007-02-01

Using poly(3-hexylthiophene) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61 bulk-heterojunction blends as the absorbing material, organic photovoltaic devices have been fabricated onto multimode optical fibers. The behavior of the short circuit current density, filling factor, and open circuit voltage as the angle of the incident light onto the cleaved fiber face is varied suggests that the evanescent field at the interface between the fiber and the transparent contact may play a role in coupling light from the fiber into the device. Further, optical loss into the device increases as the fiber diameter decreases.

Betavoltaics using scandium tritide and contact potential difference

NASA Astrophysics Data System (ADS)

Liu, Baojun; Chen, Kevin P.; Kherani, Nazir P.; Zukotynski, Stefan; Antoniazzi, Armando B.

2008-02-01

Tritium-powered betavoltaic micropower sources using contact potential difference (CPD) are demonstrated. Thermally stable scandium tritide thin films with a surface activity of 15mCi/cm2 were used as the beta particle source. The electrical field created by the work function difference between the ScT film and a platinum or copper electrode was used to separate the beta-generated electrical charge carriers. Open circuit voltages of 0.5 and 0.16V and short circuit current densities of 2.7 and 5.3nA/cm2 were achieved for gaseous and solid dielectric media-based CPD cells, respectively.

Demonstration of a 4H SiC betavoltaic cell

NASA Astrophysics Data System (ADS)

Chandrashekhar, M. V. S.; Thomas, Christopher I.; Li, Hui; Spencer, M. G.; Lal, Amit

2006-01-01

A betavoltaic cell in 4H SiC is demonstrated. A p-n diode structure was used to collect the charge from a 1mCi Ni-63 source. An open circuit voltage of 0.72V and a short circuit current density of 16.8nA /cm2 were measured in a single p-n junction. A 6% lower bound on the power conversion efficiency was obtained. A simple photovoltaic-type model was used to explain the results. Fill factor and backscattering effects were included in the efficiency calculation. The performance of the device was limited by edge recombination.

Origin of photovoltage in perovskite solar cells probed by first-principles calculations

NASA Astrophysics Data System (ADS)

Echeverría-Arrondo, C.

2018-06-01

Hybrid halide perovskite solar cells hold great potential for photovoltaic applications, but suffer, however, from anomalous current density-voltage characteristics. With a view to further understanding the performance of these optoelectronic devices, we investigate a prototypical electron selective contact with density functional theory methods. Our computations on a TiO2/CH3NH3PbI3 heterojunction doped with Schottky defects at open circuit reveal a consistent picture of ions and interlayer excitons at the origin of photovoltage formation.

Ultra-high aspect ratio copper nanowires as transparent conductive electrodes for dye sensitized solar cells

NASA Astrophysics Data System (ADS)

Zhu, Zhaozhao; Mankowski, Trent; Shikoh, Ali Sehpar; Touati, Farid; Benammar, Mohieddine A.; Mansuripur, Masud; Falco, Charles M.

2016-09-01

We report the synthesis of ultra-high aspect ratio copper nanowires (CuNW) and fabrication of CuNW-based transparent conductive electrodes (TCE) with high optical transmittance (>80%) and excellent sheet resistance (Rs <30 Ω/sq). These CuNW TCEs are subsequently hybridized with aluminum-doped zinc oxide (AZO) thin-film coatings, or platinum thin film coatings, or nickel thin-film coatings. Our hybrid transparent electrodes can replace indium tin oxide (ITO) films in dye-sensitized solar cells (DSSCs) as either anodes or cathodes. We highlight the challenges of integrating bare CuNWs into DSSCs, and demonstrate that hybridization renders the solar cell integrations feasible. The CuNW/AZO-based DSSCs have reasonably good open-circuit voltage (Voc = 720 mV) and short-circuit current-density (Jsc = 0.96 mA/cm2), which are comparable to what is obtained with an ITO-based DSSC fabricated with a similar process. Our CuNW-Ni based DSSCs exhibit a good open-circuit voltage (Voc = 782 mV) and a decent short-circuit current (Jsc = 3.96 mA/cm2), with roughly 1.5% optical-to-electrical conversion efficiency.

Interplay of oxygen-evolution kinetics and photovoltaic power curves on the construction of artificial leaves

PubMed Central

Surendranath, Yogesh; Bediako, D. Kwabena; Nocera, Daniel G.

2012-01-01

An artificial leaf can perform direct solar-to-fuels conversion. The construction of an efficient artificial leaf or other photovoltaic (PV)-photoelectrochemical device requires that the power curve of the PV material and load curve of water splitting, composed of the catalyst Tafel behavior and cell resistances, be well-matched near the thermodynamic potential for water splitting. For such a condition, we show here that the current density-voltage characteristic of the catalyst is a key determinant of the solar-to-fuels efficiency (SFE). Oxidic Co and Ni borate (Co-Bi and Ni-Bi) thin films electrodeposited from solution yield oxygen-evolving catalysts with Tafel slopes of 52 mV/decade and 30 mV/decade, respectively. The consequence of the disparate Tafel behavior on the SFE is modeled using the idealized behavior of a triple-junction Si PV cell. For PV cells exhibiting similar solar power-conversion efficiencies, those displaying low open circuit voltages are better matched to catalysts with low Tafel slopes and high exchange current densities. In contrast, PV cells possessing high open circuit voltages are largely insensitive to the catalyst’s current density-voltage characteristics but sacrifice overall SFE because of less efficient utilization of the solar spectrum. The analysis presented herein highlights the importance of matching the electrochemical load of water-splitting to the onset of maximum current of the PV component, drawing a clear link between the kinetic profile of the water-splitting catalyst and the SFE efficiency of devices such as the artificial leaf. PMID:22689962

Lightning effects on the NASA F-8 digital-fly-by-wire airplane

NASA Technical Reports Server (NTRS)

Plumer, J. A.; Fisher, F. A.; Walko, L. C.

1975-01-01

The effects of lightning on a Digital Fly-By-Wire (DFBW)aircraft control system were investigated. The aircraft was a NASA operated F-8 fitted with a modified Apollo guidance computer. Current pulses similar in waveshape to natural lightning, but lower in amplitude, were injected into the aircraft. Measurements were made of the voltages induced on the DFBW circuits, the total current induced on the bundles of wires, the magnetic field intensity inside the aircraft, and the current density on the skin of the aircraft. Voltage measurements were made in both the line-to-ground and line-to-line modes. Voltages measured at the non-destructive test level were then scaled upward to determine how much would be produced by actual lightning. A 200,000 ampere severe lightning flash would produce between 40 and 2000 volts in DFBW circuits. Some system components are expected to be vulnerable to these voltages.

Open-circuit voltage improvements in low-resistivity solar cells

NASA Technical Reports Server (NTRS)

Godlewski, M. P.; Klucher, T. M.; Mazaris, G. A.; Weizer, V. G.

1979-01-01

Mechanisms limiting the open-circuit voltage in 0.1 ohm-cm solar cells were investigated. It was found that a rather complicated multistep diffusion process could produce cells with significantly improved voltages. The voltage capabilities of various laboratory cells were compared independent of their absorption and collection efficiencies. This was accomplished by comparing the cells on the basis of their saturation currents or, equivalently, comparing their voltage outputs at a constant current-density level. The results show that for both the Lewis diffused emitter cell and the Spire ion-implanted emitter cell the base component of the saturation current is voltage controlling. The evidence for the University of Florida cells, although not very conclusive, suggests emitter control of the voltage in this device. The data suggest further that the critical voltage-limiting parameter for the Lewis cell is the electron mobility in the cell base.

Measurement of toroidal vessel eddy current during plasma disruption on J-TEXT

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, L. J.; Yu, K. X.; Zhang, M., E-mail: zhangming@hust.edu.cn

2016-01-15

In this paper, we have employed a thin, printed circuit board eddy current array in order to determine the radial distribution of the azimuthal component of the eddy current density at the surface of a steel plate. The eddy current in the steel plate can be calculated by analytical methods under the simplifying assumptions that the steel plate is infinitely large and the exciting current is of uniform distribution. The measurement on the steel plate shows that this method has high spatial resolution. Then, we extended this methodology to a toroidal geometry with the objective of determining the poloidal distributionmore » of the toroidal component of the eddy current density associated with plasma disruption in a fusion reactor called J-TEXT. The preliminary measured result is consistent with the analysis and calculation results on the J-TEXT vacuum vessel.« less

Polyfluorene light-emitting devices and amorphous silicon:hydrogen TFT pixel circuits for active-matrix organic light-emitting displays

NASA Astrophysics Data System (ADS)

He, Yi

2000-10-01

Organic light-emitting devices (OLEDs) made of single-layer and double-layer polymer thin films have been fabricated and studied. The hole transporting (polymer A) and emissive (polymer B) polymers were poly(9,9' -dioctyl fluorene-2,7-diyl)-co-poly(diphenyl-p-tolyl-amine-4,4 '-diyl) and poly(9,9'-dioctyl fluorene-2,7-diyl)-co-poly(benzothiadiazole 2,5-diyl), respectively. The optical bandgaps of polymer A and B were 2.72 and 2.82 eV, respectively. The photoluminescence (PL) peaks for polymer A and B were 502 and 546 nm, respectively. The electroluminescence (EL) peak for polymer B was 547 nm. No EL has been observed from polymer A single layer OLEDs. To obtain the spectral distribution of the emission properties of the light-emitting devices, a new light-output measurement technique was developed. Using this technique, the spectral distribution of the luminance, radiance, photon density emission can be obtained. Moreover, the device external quantum efficiency calculated using this technique is accurate and insensitive to the light emission spectrum shape. Organic light-emitting devices have been fabricated and studied on both glass and flexible plastic substrates. The OLEDs showed a near-linear relationship between the luminance and the applied current density over four orders of magnitude. For the OLEDs fabricated on the glass substrate, luminance ˜9,300 cd/m2, emission efficiency ˜14.5 cd/A, luminescence power efficiency ˜2.26 lm/W, and external quantum efficiency ˜3.85% have been achieved. For the OLEDs fabricated on the flexible plastic substrates, both aluminum and calcium were used as cathode materials. The achieved maximum OLED luminance, emission efficiency, luminescence power efficiency, and external quantum efficiency were ˜13,000 cd/m2, ˜66.1 cd/A, ˜17.2 lm/W, and 16.7%, respectively. To make an active-matrix organic light-emitting display (AM-OLED), a two-TFT pixel electrode circuit was designed and fabricated based on amorphous silicon TFT technology. This circuit was capable of providing continuous pixel excitation and a simple driving scheme. However, it showed an output current variation of ˜40% to 80% due to the drive TFT threshold voltage (V th) shift after long-term operation. To improve the pixel circuit electrical reliability, a four-TFT pixel electrode circuit was proposed and fabricated. This circuit only showed an output current variation <1% for the high currents (>0.5muA) even when a TFT Vth shift as large as 3V was present. This four-TFT pixel electrode circuit was used to fabricate small size active-matrix monochrome organic light-emitting display.

The Voltage Distribution Characteristics of a Hybrid Circuit Breaker During High Current Interruption

NASA Astrophysics Data System (ADS)

Cheng, Xian; Duan, Xiongying; Liao, Minfu; Huang, Zhihui; Luo, Yan; Zou, Jiyan

2013-08-01

Hybrid circuit breaker (HCB) technology based on a vacuum interrupter and a SF6 interrupter in series has become a new research direction because of the low-carbon requirements for high voltage switches. The vacuum interrupter has an excellent ability to deal with the steep rising part of the transient recovery voltage (TRV), while the SF6 interrupter can withstand the peak part of the voltage easily. An HCB can take advantage of the interrupters in the current interruption process. In this study, an HCB model based on the vacuum ion diffusion equations, ion density equation, and modified Cassie-Mayr arc equation is explored. A simulation platform is constructed by using a set of software called the alternative transient program (ATP). An HCB prototype is also designed, and the short circuit current is interrupted by the HCB under different action sequences of contacts. The voltage distribution of the HCB is analyzed through simulations and tests. The results demonstrate that if the vacuum interrupter withstands the initial TRV and interrupts the post-arc current first, then the recovery speed of the dielectric strength of the SF6 interrupter will be fast. The voltage distribution between two interrupters is determined by their post-arc resistance, which happens after current-zero, and subsequently, it is determined by the capacitive impedance after the post-arc current decays to zero.

MgB2-based superconductors for fault current limiters

NASA Astrophysics Data System (ADS)

Sokolovsky, V.; Prikhna, T.; Meerovich, V.; Eisterer, M.; Goldacker, W.; Kozyrev, A.; Weber, H. W.; Shapovalov, A.; Sverdun, V.; Moshchil, V.

2017-02-01

A promising solution of the fault current problem in power systems is the application of fast-operating nonlinear superconducting fault current limiters (SFCLs) with the capability of rapidly increasing their impedance, and thus limiting high fault currents. We report the results of experiments with models of inductive (transformer type) SFCLs based on the ring-shaped bulk MgB2 prepared under high quasihydrostatic pressure (2 GPa) and by hot pressing technique (30 MPa). It was shown that the SFCLs meet the main requirements to fault current limiters: they possess low impedance in the nominal regime of the protected circuit and can fast increase their impedance limiting both the transient and the steady-state fault currents. The study of quenching currents of MgB2 rings (SFCL activation current) and AC losses in the rings shows that the quenching current density and critical current density determined from AC losses can be 10-20 times less than the critical current determined from the magnetization experiments.

High-voltage solar-cell chip

NASA Technical Reports Server (NTRS)

Kapoor, V. J.; Valco, G. J.; Skebe, G. G.; Evans, J. C., Jr.

1985-01-01

Integrated circuit technology has been successfully applied to the design and fabrication of 0.5 x 0.5-cm planar multijunction solar-cell chips. Each of these solar cells consisted of six voltage-generating unit cells monolithically connected in series and fabricated on a 75-micron-thick, p-type, single crystal, silicon substrate. A contact photolithic process employing five photomask levels together with a standard microelectronics batch-processing technique were used to construct the solar-cell chip. The open-circuit voltage increased rapidly with increasing illumination up to 5 AM1 suns where it began to saturate at the sum of the individual unit-cell voltages at a maximum of 3.0 V. A short-circuit current density per unit cell of 240 mA/sq cm was observed at 10 AM1 suns.

Performance of ceramic superconductors in magnetic bearings

NASA Technical Reports Server (NTRS)

Kirtley, James L., Jr.; Downer, James R.

1993-01-01

Magnetic bearings are large-scale applications of magnet technology, quite similar in certain ways to synchronous machinery. They require substantial flux density over relatively large volumes of space. Large flux density is required to have satisfactory force density. Satisfactory dynamic response requires that magnetic circuit permeances not be too large, implying large air gaps. Superconductors, which offer large magnetomotive forces and high flux density in low permeance circuits, appear to be desirable in these situations. Flux densities substantially in excess of those possible with iron can be produced, and no ferromagnetic material is required. Thus the inductance of active coils can be made low, indicating good dynamic response of the bearing system. The principal difficulty in using superconductors is, of course, the deep cryogenic temperatures at which they must operate. Because of the difficulties in working with liquid helium, the possibility of superconductors which can be operated in liquid nitrogen is thought to extend the number and range of applications of superconductivity. Critical temperatures of about 98 degrees Kelvin were demonstrated in a class of materials which are, in fact, ceramics. Quite a bit of public attention was attracted to these new materials. There is a difficulty with the ceramic superconducting materials which were developed to date. Current densities sufficient for use in large-scale applications have not been demonstrated. In order to be useful, superconductors must be capable of carrying substantial currents in the presence of large magnetic fields. The possible use of ceramic superconductors in magnetic bearings is investigated and discussed and requirements that must be achieved by superconductors operating at liquid nitrogen temperatures to make their use comparable with niobium-titanium superconductors operating at liquid helium temperatures are identified.

Light illumination intensity dependence of photovoltaic parameter in polymer solar cells with ammonium heptamolybdate as hole extraction layer.

PubMed

Liu, Zhiyong; Niu, Shengli; Wang, Ning

2018-01-01

A low-temperature, solution-processed molybdenum oxide (MoO X ) layer and a facile method for polymer solar cells (PSCs) is developed. The PSCs based on a MoO X layer as the hole extraction layer (HEL) is a significant advance for achieving higher photovoltaic performance, especially under weaker light illumination intensity. Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) measurements show that the (NH 4 ) 6 Mo 7 O 24 molecule decomposes and forms the molybdenum oxide (MoO X ) molecule when undergoing thermal annealing treatment. In this study, PSCs with the MoO X layer as the HEL exhibited better photovoltaic performance, especially under weak light illumination intensity (from 100 to 10mWcm -2 ) compared to poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS)-based PSCs. Analysis of the current density-voltage (J-V) characteristics at various light intensities provides information on the different recombination mechanisms in the PSCs with a MoO X and PEDOT:PSS layer as the HEL. That the slopes of the open-circuit voltage (V OC ) versus light illumination intensity plots are close to 1 unity (kT/q) reveals that bimolecular recombination is the dominant and weaker monomolecular recombination mechanism in open-circuit conditions. That the slopes of the short-circuit current density (J SC ) versus light illumination intensity plots are close to 1 reveals that the effective charge carrier transport and collection mechanism of the MoO X /indium tin oxide (ITO) anode is the weaker bimolecular recombination in short-circuit conditions. Our results indicate that MoO X is an alternative candidate for high-performance PSCs, especially under weak light illumination intensity. Copyright © 2017 Elsevier Inc. All rights reserved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Qing; Gerhardt, Michael R.; Aziz, Michael J.

We measure the polarization characteristics of a quinone-bromide redox flow battery with interdigitated flow fields, using electrochemical impedance spectroscopy and voltammetry of a full cell and of a half cell against a reference electrode. We find linear polarization behavior at 50% state of charge all the way to the short-circuit current density of 2.5 A/cm 2. We uniquely identify the polarization area-specific resistance (ASR) of each electrode, the membrane ASR to ionic current, and the electronic contact ASR. We use voltage probes to deduce the electronic current density through each sheet of carbon paper in the quinone-bearing electrode. By alsomore » interpreting the results using the Newman 1-D porous electrode model, we deduce the volumetric exchange current density of the porous electrode. We uniquely evaluate the power dissipation and identify a correspondence to the contributions to the electrode ASR from the faradaic, electronic, and ionic transport processes. We find that, within the electrode, more power is dissipated in the faradaic process than in the electronic and ionic conduction processes combined, despite the observed linear polarization behavior. We examine the sensitivity of the ASR to the values of the model parameters. The greatest performance improvement is anticipated from increasing the volumetric exchange current density.« less

Electrical transport characterization of PEDOT:PSS/n-Si Schottky diodes and their applications in solar cells.

PubMed

Khurelbaatar, Zagarzusem; Hyung, Jung-Hwan; Kim, Gil-Sung; Park, No-Won; Shim, Kyu-Hwan; Lee, Sang-Kwon

2014-06-01

We demonstrate locally contacted PEDOT:PSS Schottky diodes with excellent rectifying behavior, fabricated on n-type Si substrates using a spin-coating process and a reactive-ion etching process. Electrical transport characterizations of these Schottky diodes were investigated by both current-voltage (I-V) and capacitance-voltage (C-V) measurements. We found that these devices exhibit excellent modulation in the current with an on/off ratio of - 10(6). Schottky junction solar cells composed of PEDOT:PSS and n-Si structures were also examined. From the current density-voltage (J-V) measurement of a solar cell under illumination, the short circuit current (I(sc)), open circuit voltage (V(oc)), and conversion efficiency (eta) were - 19.7 mA/cm2, - 578.5 mV, and - 6.5%, respectively. The simple and low-cost fabrication process of the PEDOT:PSS/n-Si Schottky junctions makes them a promising candidate for further high performance solar cell applications.

Density-matrix simulation of small surface codes under current and projected experimental noise

NASA Astrophysics Data System (ADS)

O'Brien, T. E.; Tarasinski, B.; DiCarlo, L.

2017-09-01

We present a density-matrix simulation of the quantum memory and computing performance of the distance-3 logical qubit Surface-17, following a recently proposed quantum circuit and using experimental error parameters for transmon qubits in a planar circuit QED architecture. We use this simulation to optimize components of the QEC scheme (e.g., trading off stabilizer measurement infidelity for reduced cycle time) and to investigate the benefits of feedback harnessing the fundamental asymmetry of relaxation-dominated error in the constituent transmons. A lower-order approximate calculation extends these predictions to the distance-5 Surface-49. These results clearly indicate error rates below the fault-tolerance threshold of the surface code, and the potential for Surface-17 to perform beyond the break-even point of quantum memory. However, Surface-49 is required to surpass the break-even point of computation at state-of-the-art qubit relaxation times and readout speeds.

Investigating the Effect of Titanium Dioxide (TiO2) Pollution on the Performance of the Mono-crystalline Solar Module

NASA Astrophysics Data System (ADS)

Ahmed Darwish, Zeki; Sopian, K.; Kazem, Hussein A.; Alghoul, M. A.; Alawadhi, Hussain

2017-11-01

This paper presents a study of titanium oxide TiO2 as one of the components of dust pollution affecting the PV performance. This pollutant can be found in various quantities in different locations around the world. The production of energy by different types of photovoltaic systems is very sensitive and depends on various environmental factors. Dust is one of the main contributing factors, yet the type of the dust is often neglected when studying the behaviour of the solar panel. In this experimental work we have studied the performance of the monocrystalline solar module as affected by the density of TiO2. The reduction of the PV module power caused by titanium dioxide under various mass densities was investigated. The results showed that the TiO2 has a significant effect on the PV output power. The dust density varied between 0-125 g.m-2. The corresponding reduction of the PV output power increased from 0 to 86.7%. This is based on various influencing parameters such as: short circuit current (Isc), maximum current (Im), open circuit voltage (Voc), maximum voltage (Vm), maximum power (Pm) and efficiency (E). Two functions are proposed as a mathematical model in order to explain this behaviour, namely the exponential and Fourier functions. The coefficients of all general models are valid for this type of dust with a density value ranging from 0-125 g.m-2.

Toroidal-Core Microinductors Biased by Permanent Magnets

NASA Technical Reports Server (NTRS)

Lieneweg, Udo; Blaes, Brent

2003-01-01

The designs of microscopic toroidal-core inductors in integrated circuits of DC-to-DC voltage converters would be modified, according to a proposal, by filling the gaps in the cores with permanent magnets that would apply bias fluxes (see figure). The magnitudes and polarities of the bias fluxes would be tailored to counteract the DC fluxes generated by the DC components of the currents in the inductor windings, such that it would be possible to either reduce the sizes of the cores or increase the AC components of the currents in the cores without incurring adverse effects. Reducing the sizes of the cores could save significant amounts of space on integrated circuits because relative to other integrated-circuit components, microinductors occupy large areas - of the order of a square millimeter each. An important consideration in the design of such an inductor is preventing magnetic saturation of the core at current levels up to the maximum anticipated operating current. The requirement to prevent saturation, as well as other requirements and constraints upon the design of the core are expressed by several equations based on the traditional magnetic-circuit approximation. The equations involve the core and gap dimensions and the magnetic-property parameters of the core and magnet materials. The equations show that, other things remaining equal, as the maximum current is increased, one must increase the size of the core to prevent the flux density from rising to the saturation level. By using a permanent bias flux to oppose the flux generated by the DC component of the current, one would reduce the net DC component of flux in the core, making it possible to reduce the core size needed to prevent the total flux density (sum of DC and AC components) from rising to the saturation level. Alternatively, one could take advantage of the reduction of the net DC component of flux by increasing the allowable AC component of flux and the corresponding AC component of current. In either case, permanent-magnet material and the slant (if any) and thickness of the gap must be chosen according to the equations to obtain the required bias flux. In modifying the design of the inductor, one must ensure that the inductance is not altered. The simplest way to preserve the original value of inductance would be to leave the gap dimensions unchanged and fill the gap with a permanent- magnet material that, fortuitously, would produce just the required bias flux. A more generally applicable alternative would be to partly fill either the original gap or a slightly enlarged gap with a suitable permanent-magnet material (thereby leaving a small residual gap) so that the reluctance of the resulting magnetic circuit would yield the desired inductance.

[Measurements of the flux densities of static magnetic fields generated by two types of dental magnetic attachments and their retentive forces].

PubMed

Xu, Chun; Chao, Yong-lie; Du, Li; Yang, Ling

2004-05-01

To measure and analyze the flux densities of static magnetic fields generated by two types of commonly used dental magnetic attachments and their retentive forces, and to provide guidance for the clinical application of magnetic attachments. A digital Gaussmeter was used to measure the flux densities of static magnetic fields generated by two types of magnetic attachments, under four circumstances: open-field circuit; closed-field circuit; keeper and magnet slid laterally for a certain distance; and existence of air gap between keeper and magnet. The retentive forces of the magnetic attachments in standard closed-field circuit, with the keeper and magnet sliding laterally for a certain distance or with a certain air gap between keeper and magnet were measured by a tensile testing machine. There were flux leakages under both the open-field circuit and closed-field circuit of the two types of magnetic attachments. The flux densities on the surfaces of MAGNEDISC 800 (MD800) and MAGFIT EX600W (EX600) magnetic attachments under open-field circuit were 275.0 mT and 147.0 mT respectively. The flux leakages under closed-field circuit were smaller than those under open-field circuit. The respective flux densities on the surfaces of MD800 and EX600 magnetic attachments decreased to 11.4 mT and 4.5 mT under closed-field circuit. The flux density around the magnetic attachment decreased as the distance from the surface of the attachment increased. When keeper and magnet slid laterally for a certain distance or when air gap existed between keeper and magnet, the flux leakage increased in comparison with that under closed-field circuit. Under the standard closed-field circuit, the two types of magnetic attachments achieved the largest retentive forces. The retentive forces of MD800 and EX600 magnetic attachments under the standard closed-field circuit were 6.20 N and 4.80 N respectively. The retentive forces decreased with the sliding distance or with the increase of air gap between keeper and magnet. The magnetic attachments have flux leakages. When they are used in patients' oral cavities, if keeper and magnet are not attached accurately, the flux leakage will increase, and at the same time the retentive force will decrease. Therefore the keeper and magnet should be attached accurately in clinical application.

Adjustable direct current and pulsed circuit fault current limiter

DOEpatents

Boenig, Heinrich J.; Schillig, Josef B.

2003-09-23

A fault current limiting system for direct current circuits and for pulsed power circuit. In the circuits, a current source biases a diode that is in series with the circuits' transmission line. If fault current in a circuit exceeds current from the current source biasing the diode open, the diode will cease conducting and route the fault current through the current source and an inductor. This limits the rate of rise and the peak value of the fault current.

Extreme IR absorption in group IV-SiGeSn core-shell nanowires

NASA Astrophysics Data System (ADS)

Attiaoui, Anis; Wirth, Stephan; Blanchard-Dionne, André-Pierre; Meunier, Michel; Hartmann, J. M.; Buca, Dan; Moutanabbir, Oussama

2018-06-01

Sn-containing Si and Ge (Ge1-y-xSixSny) alloys are an emerging family of semiconductors with the potential to impact group IV material-based devices. These semiconductors provide the ability to independently engineer both the lattice parameter and bandgap, which holds the premise to develop enhanced or novel photonic and electronic devices. With this perspective, we present detailed investigations of the influence of Ge1-y-xSixSny layers on the optical properties of Si and Ge based heterostructures and nanowires. We found that by adding a thin Ge1-y-xSixSny capping layer on Si or Ge greatly enhances light absorption especially in the near infrared range, leading to an increase in short-circuit current density. For the Ge1-y-xSixSny structure at thicknesses below 30 nm, a 14-fold increase in the short-circuit current is observed with respect to bare Si. This enhancement decreases by reducing the capping layer thickness. Conversely, decreasing the shell thickness was found to improve the short-circuit current in Si/Ge1-y-xSixSny and Ge/Ge1-y-xSixSny core/shell nanowires. The optical absorption becomes very important by increasing the Sn content. Moreover, by exploiting an optical antenna effect, these nanowires show extreme light absorption, reaching an enhancement factor, with respect to Si or Ge nanowires, on the order of 104 in Si/Ge0.84Si0.04Sn0.12 and 12 in Ge/Ge0.84Si0.04Sn0.12. Furthermore, we analyzed the optical response after the addition of a dielectric layer of Si3N4 to the Si/Ge1-y-xSixSny core-shell nanowire and found approximatively a 50% increase in the short-circuit current density for a dielectric layer of thickness equal to 45 nm and both a core radius and a shell thickness greater than 40 nm. The core-shell optical antenna benefits from a multiplication of enhancements contributed by leaky mode resonances in the semiconductor part and antireflection effects in the dielectric part.

Development of AC impedance methods for evaluating corroding metal surfaces and coatings

NASA Technical Reports Server (NTRS)

Knockemus, Ward

1986-01-01

In an effort to investigate metal surface corrosion and the breakdown of metal protective coatings the AC Impedance Method was applied to zinc chromate primer coated 2219-T87 aluminum. The model 368-1 AC Impedance Measurement System recently acquired by the MSFC Corrosion Research Branch was used to monitor changing properties of coated aluminum disks immersed in 3.5% NaCl buffered at ph 5.5 over three to four weeks. The DC polarization resistance runs were performed on the same samples. The corrosion system can be represented by an electronic analog called an equivalent circuit that consists of transistors and capacitors in specific arrangements. This equivalent circuit parallels the impedance behavior of the corrosion system during a frequency scan. Values for resistances and capacities that can be assigned in the equivalent circuit following a least squares analysis of the data describe changes that occur on the corroding metal surface and in the protective coating. A suitable equivalent circuit was determined that predicts the correct Bode phase and magnitude for the experimental sample. The DC corrosion current density data are related to equivalent circuit element parameters.

The corrosion mechanisms for primer coated 2219-T87 aluminum

NASA Technical Reports Server (NTRS)

Danford, Merlin D.; Knockemus, Ward W.

1987-01-01

To investigate metal surface corrosion and the breakdown of metal protective coatings, the ac Impedance Method was applied to zinc chromate primer coated 2219-T87 aluminum. The EG&GPARC Model 368 ac Impedance Measurement System, along with dc measurements with the same system using the Polarization Resistance Method, was used to monitor changing properties of coated aluminum disks immersed in 3.5 percent NaCl solutions buffered at pH 5.5 and pH 8.2 over periods of 40 days each. The corrosion system can be represented by an electronic analog called an equivalent circuit consisting of resistors and capacitors in specific arrangements. This equivalent circuit parallels the impedance behavior of the corrosion system during a frequency scan. Values for resistances and capacitances, that can be assigned in the equivalent circuit following a least squares analysis of the data, describe changes occurring on the corroding metal surface and in the protective coatings. A suitable equivalent circuit has been determined which predicts the correct Bode phase and magnitude for the experimental sample. The dc corrosion current density data are related to equivalent circuit element parameters.

Laboratory performance of zinc anodes for impressed current cathodic protection of reinforced concrete

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brousseau, R.; Arnott, M.; Baldock, B.

1995-08-01

Cathodic protection is used increasingly to mitigate steel reinforcement corrosion in concrete. the performance of zinc materials as impressed current anodes was evaluated. The anode materials investigated included rolled zinc sheets, metallized zinc, and 85% Zn-15% Al. The circuit resistance and the adhesion of the anodes was monitored with polarization time. Overall performance of arc-sprayed zinc was good. However, its adhesion to the concrete surface slowly decreased as the current density, or the polarization period, increased. Penny blank sheets and metallized 85% Zn-15% Al were found unsuitable as impressed current anodes.

Basolateral K channels in an insect epithelium. Channel density, conductance, and block by barium

PubMed Central

Hanrahan, JW; Wills, NK; Phillips, JE; Lewis, SA

1986-01-01

K channels in the basolateral membrane of insect hindgut were studied using current fluctuation analysis and microelectrodes. Locust recta were mounted in Ussing-type chambers containing Cl-free saline and cyclic AMP (cAMP). A transepithelial K current was induced by raising serosal [K] under short-circuit conditions. Adding Ba to the mucosal (luminal) side under these conditions had no effect; however, serosal Ba reversibly inhibited the short-circuit current (Isc), increased transepithelial resistance (Rt), and added a Lorentzian component to power density spectra of the Isc. A nonlinear relationship between corner frequency and serosal [Ba] was observed, which suggests that the rate constant for Ba association with basolateral channels increased as [Ba] was elevated. Microelectrode experiments revealed that the basolateral membrane hyperpolarized when Ba was added: this change in membrane potential could explain the nonlinearity of the 2 pi fc vs. [Ba] relationship if external Ba sensed about three-quarters of the basolateral membrane field. Conventional microelectrodes were used to determine the correspondence between transepithelially measured current noise and basolateral membrane conductance fluctuations, and ion-sensitive microelectrodes were used to measure intracellular K activity (acK). From the relationship between the net electrochemical potential for K across the basolateral membrane and the single channel current calculated from noise analysis, we estimate that the conductance of basolateral K channels is approximately 60 pS, and that there are approximately 180 million channels per square centimeter of tissue area. PMID:2420918

Analysis of ProSEDS Test of Bare-Tether Collection

NASA Technical Reports Server (NTRS)

Sanmartin, J. R.; Lorenzini, E. C.; Estes, R. D.; Charro, M.; Cosmo, M. L.

2003-01-01

NASA's tether experiment ProSEDS will be placed in orbit on board a Delta-II rocket to test bare-tether electron collection, deorbiting of the rocket second stage, and the system dynamic stability. ProSEDS performance will vary because ambient conditions change along the orbit and tether-circuit bulk elements at the cathodic end follow the step-by-step sequence for the current cycles of operating modes (open-circuit, shunt and resistor modes for primary cycles; shunt and battery modes for secondary cycles). In this work we discuss expected ProSEDS values of the ratio L,/L*, which jointly with cathodic bulk elements determines bias and current tether profiles; L, is tether length, and L* (changing with tether temperature and ionospheric plasma density and magnetic field) is a characteristic length gauging ohmic versus baretether collection impedances. We discuss how to test bare-tether electron collection during primary cycles, using probe measurements of plasma density, measurements of cathodic current in resistor and shunt modes, and an estimate of tether temperature based on ProSEDS orbital position at the particular cycle concerned. We discuss how a temperature misestimate might occasionally affect the test of bare-tether collection, and how introducing the battery mode in some primary cycles, for an additional current measurement, could obviate the need of a temperature estimate. We also show how to test bare-tether collection by estimating orbit-decay rate from measurements of cathodic current for the shunt and battery modes of secondary cycles.

A Silicon Nanocrystal Schottky Junction Solar Cell produced from Colloidal Silicon Nanocrystals

PubMed Central

2010-01-01

Solution-processed semiconductors are seen as a promising route to reducing the cost of the photovoltaic device manufacture. We are reporting a single-layer Schottky photovoltaic device that was fabricated by spin-coating intrinsic silicon nanocrystals (Si NCs) from colloidal suspension. The thin-film formation process was based on Si NCs without any ligand attachment, exchange, or removal reactions. The Schottky junction device showed a photovoltaic response with a power conversion efficiency of 0.02%, a fill factor of 0.26, short circuit-current density of 0.148 mA/cm2, and open-circuit voltage of 0.51 V. PMID:20676200

Variability of multilevel switching in scaled hybrid RS/CMOS nanoelectronic circuits: theory

NASA Astrophysics Data System (ADS)

Heittmann, Arne; Noll, Tobias G.

2013-07-01

A theory is presented which describes the variability of multilevel switching in scaled hybrid resistive-switching/CMOS nanoelectronic circuits. Variability is quantified in terms of conductance variation using the first two moments derived from the probability density function (PDF) of the RS conductance. For RS, which are based on the electrochemical metallization effect (ECM), this variability is - to some extent - caused by discrete events such as electrochemical reactions, which occur on atomic scale and are at random. The theory shows that the conductance variation depends on the joint interaction between the programming circuit and the resistive switch (RS), and explicitly quantifies the impact of RS device parameters and parameters of the programming circuit on the conductance variance. Using a current mirror as an exemplary programming circuit an upper limit of 2-4 bits (dependent on the filament surface area) is estimated as the storage capacity exploiting the multilevel capabilities of an ECM cell. The theoretical results were verified by Monte Carlo circuit simulations on a standard circuit simulation environment using an ECM device model which models the filament growth by a Poisson process. Contribution to the Topical Issue “International Semiconductor Conference Dresden-Grenoble - ISCDG 2012”, Edited by Gérard Ghibaudo, Francis Balestra and Simon Deleonibus.

Digital MOS integrated circuits

NASA Astrophysics Data System (ADS)

Elmasry, M. I.

MOS in digital circuit design is considered along with aspects of digital VLSI, taking into account a comparison of MOSFET logic circuits, 1-micrometer MOSFET VLSI technology, a generalized guide for MOSFET miniaturization, processing technologies, novel circuit structures for VLSI, and questions of circuit and system design for VLSI. MOS memory cells and circuits are discussed, giving attention to a survey of high-density dynamic RAM cell concepts, one-device cells for dynamic random-access memories, variable resistance polysilicon for high density CMOS Ram, high performance MOS EPROMs using a stacked-gate cell, and the optimization of the latching pulse for dynamic flip-flop sensors. Programmable logic arrays are considered along with digital signal processors, microprocessors, static RAMs, and dynamic RAMs.

One-dimensional particle-in-cell simulation on the influence of electron and ion temperature on the sheath expansion process in the post-arc stage of vacuum circuit breaker

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mo, Yongpeng; Shi, Zongqian; Jia, Shenli

2015-02-15

The inter-contact region of vacuum circuit breakers is filled with residual plasma at the moment when the current is zero after the burning of metal vapor arc. The residual plasma forms an ion sheath in front of the post-arc cathode. The sheath then expands towards the post-arc anode under the influence of a transient recovery voltage. In this study, a one-dimensional particle-in-cell model is developed to investigate the post-arc sheath expansion. The influence of ion and electron temperatures on the decrease in local plasma density at the post-arc cathode side and post-arc anode side is discussed. When the decay inmore » the local plasma density develops from the cathode and anode sides into the high-density region and merges, the overall plasma density in the inter-contact region begins to decrease. Meanwhile, the ion sheath begins to expand faster. Furthermore, the theory of ion rarefaction wave only explains quantitatively the decrease in the overall plasma density at relatively low ion temperatures. With the increase of ion temperature to certain extent, another possible reason for the decrease in the overall plasma density is proposed and results from the more active thermal diffusion of plasma.« less

Dual-junction GaAs solar cells and their application to smart stacked III–V//Si multijunction solar cells

NASA Astrophysics Data System (ADS)

Sugaya, Takeyoshi; Tayagaki, Takeshi; Aihara, Taketo; Makita, Kikuo; Oshima, Ryuji; Mizuno, Hidenori; Nagato, Yuki; Nakamoto, Takashi; Okano, Yoshinobu

2018-05-01

We report high-quality dual-junction GaAs solar cells grown using solid-source molecular beam epitaxy and their application to smart stacked III–V//Si quadruple-junction solar cells with a two-terminal configuration for the first time. A high open-circuit voltage of 2.94 eV was obtained in an InGaP/GaAs/GaAs triple-junction top cell that was stacked to a Si bottom cell. The short-circuit current density of a smart stacked InGaP/GaAs/GaAs//Si solar cell was in good agreement with that estimated from external quantum efficiency measurements. An efficiency of 18.5% with a high open-circuit voltage of 3.3 V was obtained in InGaP/GaAs/GaAs//Si two-terminal solar cells.

Factors affecting the open-circuit voltage and electrode kinetics of some iron/titanium redox flow cells

NASA Technical Reports Server (NTRS)

Reid, M. A.; Gahn, R. F.

1977-01-01

Performance of the iron-titanium redox flow cell was studied as a function of acid concentration. Anion permeable membranes separated the compartments. Electrodes were graphite cloth. Current densities ranged up to 25 mA/square centimeter. Open-circuit and load voltages decreased as the acidity was increased on the iron side as predicted. On the titanium side, open-circuit voltages decreased as the acidity was increased in agreement with theory, but load voltages increased due to decreased polarization with increasing acidity. High acidity on the titanium side coupled with low acidity on the iron side gives the best load voltage, but such cells show voltage losses as they are repeatedly cycled. Analyses show that the bulk of the voltage losses are due to diffusion of acid through the membrane.

Tungsten doped titanium dioxide nanowires for high efficiency dye-sensitized solar cells.

PubMed

Archana, P S; Gupta, Arunava; Yusoff, Mashitah M; Jose, Rajan

2014-04-28

Metal oxide semiconductors offering simultaneously high specific surface area and high electron mobility are actively sought for fabricating high performance nanoelectronic devices. The present study deals with synthesis of tungsten doped TiO2 (W:TiO2) nanowires (diameter ∼50 nm) by electrospinning and evaluation of their performance in dye-sensitized solar cells (DSCs). Similarity in the ionic radii between W(6+) and Ti(4+) and availability of two free electrons per dopant are the rationale for the present study. Materials were characterized by X-ray diffraction, scanning and transmission electron microscopy, X-ray fluorescence measurements, and absorption spectroscopy. Nanowires containing 2 at% W:TiO2 gave 90% higher short circuit current density (JSC) (∼15.39 mA cm(-2)) in DSCs with a nominal increase in the open circuit voltage compared with that of the undoped analogue (JSC ∼8.1 mA cm(-2)). The results are validated by multiple techniques employing absorption spectroscopy, electrochemical impedance spectroscopy and open circuit voltage decay. The above studies show that the observed increments resulted from increased dye-loading, electron density, and electron lifetime in tungsten doped samples.

Power control electronics for cryogenic instrumentation

NASA Technical Reports Server (NTRS)

Ray, Biswajit; Gerber, Scott S.; Patterson, Richard L.; Myers, Ira T.

1995-01-01

In order to achieve a high-efficiency high-density cryogenic instrumentation system, the power processing electronics should be placed in the cold environment along with the sensors and signal-processing electronics. The typical instrumentation system requires low voltage dc usually obtained from processing line frequency ac power. Switch-mode power conversion topologies such as forward, flyback, push-pull, and half-bridge are used for high-efficiency power processing using pulse-width modulation (PWM) or resonant control. This paper presents several PWM and multiresonant power control circuits, implemented using commercially available CMOS and BiCMOS integrated circuits, and their performance at liquid-nitrogen temperature (77 K) as compared to their room temperature (300 K) performance. The operation of integrated circuits at cryogenic temperatures results in an improved performance in terms of increased speed, reduced latch-up susceptibility, reduced leakage current, and reduced thermal noise. However, the switching noise increased at 77 K compared to 300 K. The power control circuits tested in the laboratory did successfully restart at 77 K.

Optic nerve signals in a neuromorphic chip II: Testing and results.

PubMed

Zaghloul, Kareem A; Boahen, Kwabena

2004-04-01

Seeking to match the brain's computational efficiency, we draw inspiration from its neural circuits. To model the four main output (ganglion) cell types found in the retina, we morphed outer and inner retina circuits into a 96 x 60-photoreceptor, 3.5 x 3.3 mm2, 0.35 microm-CMOS chip. Our retinomorphic chip produces spike trains for 3600 ganglion cells (GCs), and consumes 62.7 mW at 45 spikes/s/GC. This chip, which is the first silicon retina to successfully model inner retina circuitry, approaches the spatial density of the retina. We present experimental measurements showing that the chip's subthreshold current-mode circuits realize luminance adaptation, bandpass spatiotemporal filtering, temporal adaptation and contrast gain control. The four different GC outputs produced by our chip encode light onset or offset in a sustained or transient fashion, producing a quadrature-like representation. The retinomorphic chip's circuit design is described in a companion paper [Zaghloul and Boahen (2004)].

Feedforward, high density, programmable read only neural network based memory system

NASA Technical Reports Server (NTRS)

Daud, Taher; Moopenn, Alex; Lamb, James; Thakoor, Anil; Khanna, Satish

1988-01-01

Neural network-inspired, nonvolatile, programmable associative memory using thin-film technology is demonstrated. The details of the architecture, which uses programmable resistive connection matrices in synaptic arrays and current summing and thresholding amplifiers as neurons, are described. Several synapse configurations for a high-density array of a binary connection matrix are also described. Test circuits are evaluated for operational feasibility and to demonstrate the speed of the read operation. The results are discussed to highlight the potential for a read data rate exceeding 10 megabits/sec.

30 CFR 75.900 - Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit...

Code of Federal Regulations, 2011 CFR

2011-07-01

...-phase alternating current equipment; circuit breakers. 75.900 Section 75.900 Mineral Resources MINE... Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit breakers. [Statutory Provisions] Low- and medium-voltage power circuits serving three-phase alternating current...

Current limiter circuit system

DOEpatents

Witcher, Joseph Brandon; Bredemann, Michael V.

2017-09-05

An apparatus comprising a steady state sensing circuit, a switching circuit, and a detection circuit. The steady state sensing circuit is connected to a first, a second and a third node. The first node is connected to a first device, the second node is connected to a second device, and the steady state sensing circuit causes a scaled current to flow at the third node. The scaled current is proportional to a voltage difference between the first and second node. The switching circuit limits an amount of current that flows between the first and second device. The detection circuit is connected to the third node and the switching circuit. The detection circuit monitors the scaled current at the third node and controls the switching circuit to limit the amount of the current that flows between the first and second device when the scaled current is greater than a desired level.

'Soft' amplifier circuits based on field-effect ionic transistors.

PubMed

Boon, Niels; Olvera de la Cruz, Monica

2015-06-28

Soft materials can be used as the building blocks for electronic devices with extraordinary properties. We introduce a theoretical model for a field-effect transistor in which ions are the gated species instead of electrons. Our model incorporates readily-available soft materials, such as conductive porous membranes and polymer-electrolytes to represent a device that regulates ion currents and can be integrated as a component in larger circuits. By means of Nernst-Planck numerical simulations as well as an analytical description of the steady-state current we find that the responses of the system to various input voltages can be categorized into ohmic, sub-threshold, and active modes. This is fully analogous to what is known for the electronic field-effect transistor (FET). Pivotal FET properties such as the threshold voltage and the transconductance crucially depend on the half-cell redox potentials of the source and drain electrodes as well as on the polyelectrolyte charge density and the gate material work function. We confirm the analogy with the electronic FETs through numerical simulations of elementary amplifier circuits in which we successfully substitute the electronic transistor by an ionic transistor.

High power density dc-to-dc converters for aerospace applications

NASA Technical Reports Server (NTRS)

Divan, Deepakraj M.

1990-01-01

Three dc-to-dc converter topologies aimed at high-power high-frequency applications are introduced. Major system parasitics, namely, the leakage inductance of the transformer and the device output capacitance are efficiently utilized. Of the three circuits, the single-phase and three-phase versions of the dual active bridge topology demonstrate minimal stresses, better utilization of the transformer, bidirectional, and buck-boost modes of operation. All circuits operate at a constant switching frequency, thus simplifying design of the reactive elements. The power transfer characteristics and soft-switching regions on the Vout-Iout plane are identified. Two coaxial transformers with different cross-sections were built for a rating of 50 kVA. Based on the single-phase dual active bridge topology, a 50 kW, 50 kHz converter operating at an input voltage of 200 Vdc and an output voltage of 1600 Vdc was fabricated. Characteristics of current-fed output make the dual active bridge topologies amenable to paralleling and hence extension to megawatt power levels. Projections to a 1 MW system operating from a 500 Vdc input, at an output voltage of 10 kVdc and a switching frequency of 50 kHz, using MOS-controlled thyristors, coaxially wound transformers operating at three times the present current density with cooling, and multilayer ceramic capacitors, suggests an overall power density of 0.075 to 0.08 kg/kW and an overall efficiency of 96 percent.

High-performance, lattice-mismatched InGaAs/InP monolithic interconnected modules (MIMs)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fatemi, Navid S.; Wilt, David M.; Hoffman, Richard W., Jr.

1998-10-01

High performance, lattice-mismatched p/n InGaAs/lnP monolithic interconnected module (MIM) structures were developed for thermophotovoltaic (TPV) applications. A MIM device consists of several individual InGaAs photovoltaic (PV) cells series-connected on a single semi-insulating (S.I.) InP substrate. Both interdigitated and conventional (i.e., non-interdigitated) MIMs were fabricated. The energy bandgap (Eg) for these devices was 0.60 eV. A compositionally step-graded InPAs buffer was used to accommodate a lattice mismatch of 1.1% between the active InGaAs cell structure and the InP substrate. 1x1-cm, 15-cell, 0.60-eV MIMs demonstrated an open-circuit voltage (Voc) of 5.2 V (347 mV per cell) and a fill factor of 68.6%more » at a short-circuit current density (Jsc) of 2.0 A/cm{sup 2}, under flashlamp testing. The reverse saturation current density (Jo) was 1.6x10{sup {minus}6} A/cm{sup 2}. Jo values as low as 4.1x10{sup {minus}7} A/cm{sup 2} were also observed with a conventional planar cell geometry.« less

Annealing characteristics of amorphous silicon alloy solar cells irradiated with 1.00 MeV protons

NASA Technical Reports Server (NTRS)

Abdulaziz, Salman S.; Woodyard, James R.

1991-01-01

Amorphous Si:H and amorphous Si sub x, Ge sub (1-x):H solar cells were irradiated with 1.00 MeV proton fluences in the range of 1.00E14 to 1.25E15 cm (exp -2). Annealing of the short circuit current density was studied at 0, 22, 50, 100, and 150 C. Annealing times ranged from an hour to several days. The measurements confirmed that annealing occurs at 0 C and the initial characteristics of the cells are restored by annealing at 200 C. The rate of annealing does not appear to follow a simple nth order reaction rate model. Calculations of the short-circuit current density using quantum efficiency measurements and the standard AM1.5 global spectrum compare favorably with measured values. It is proposed that the degradation in J sub sc with irradiation is due to carrier recombination through the fraction of D (o) states bounded by the quasi-Fermi energies. The time dependence of the rate of annealing of J sub sc does appear to be consistent with the interpretation that there is a thermally activated dispersive transport mechanism which leads to the passivation of the irradiation induced defects.

The role of lipopolysaccharide on the electrochemical behavior of titanium.

PubMed

Barão, V A; Mathew, M T; Assunção, W G; Yuan, J C; Wimmer, M A; Sukotjo, C

2011-05-01

Lipopolysaccharide (LPS) may induce peri-implantitis and implant failure. However, the role of LPS in titanium (Ti) electrochemical behavior remains unknown. We hypothesized that LPS in saliva with different pHs affects Ti corrosion properties. Thirty-six Ti discs (15 mm × 3 mm) were divided into 12 groups according to saliva pH (3, 6.5, and 9) and Escherichia coli LPS concentration (0, 0.15, 15, and 150 µg/mL). Electrochemical tests, such as open circuit potential, potentiodynamic, and electrochemical impedance spectroscopy, were conducted in a controlled environment. Data were evaluated by Pearson correlation and regression analysis (α = 0.05). LPS and pH affected Ti corrosive behavior. In general, lower pH and higher LPS concentration accelerated Ti corrosion. In the control group, the increase of pH significantly reduced the corrosion rate and increased the capacitance of the double layer. In LPS groups, the decrease of pH significantly increased the corrosion rate of Ti. LPS negatively influenced Ti corrosion behavior. C(dl), capacitance of double layer; E(corr), corrosion potential; EIS, electrochemical impedance spectroscopy; I(corr), corrosion current density; I(pass), passivation current density; LPS, lipopolysaccharide; OCP, open circuit potential; R(p), polarization resistance; Ti, titanium.

A novel technique to measure interface trap density in a GaAs MOS capacitor using time-varying magnetic fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choudhury, Aditya N. Roy, E-mail: aditya@physics.iisc.ernet.in; Venkataraman, V.

Interface trap density (D{sub it}) in a GaAs metal-oxide-semiconductor (MOS) capacitor can be measured electrically by measuring its impedance, i.e. by exciting it with a small signal voltage source and measuring the resulting current through the circuit. We propose a new method of measuring D{sub it} where the MOS capacitor is subjected to a (time-varying) magnetic field instead, which produces an effect equivalent to a (time-varying) voltage drop across the sample. This happens because the electron chemical potential of GaAs changes with a change in an externally applied magnetic field (unlike that of the gate metal); this is not themore » voltage induced by Faraday’s law of electromagnetic induction. So, by measuring the current through the MOS, D{sub it} can be found similarly. Energy band diagrams and equivalent circuits of a MOS capacitor are drawn in the presence of a magnetic field, and analyzed. The way in which a magnetic field affects a MOS structure is shown to be fundamentally different compared to an electrical voltage source.« less

Conical structures for highly efficient solar cell applications

NASA Astrophysics Data System (ADS)

Korany, Fatma M. H.; Hameed, Mohamed Farhat O.; Hussein, Mohamed; Mubarak, Roaa; Eladawy, Mohamed I.; Obayya, Salah Sabry A.

2018-01-01

Improving solar cell efficiency is a critical research topic. Nowadays, light trapping techniques are a promising way to enhance solar cell performance. A modified nanocone nanowire (NW) is proposed and analyzed for solar cell applications. The suggested NW consists of conical and truncated conical units. The geometrical parameters are studied using a three-dimensional (3-D) finite difference time-domain (FDTD) method to achieve broadband absorption through the reported design and maximize its ultimate efficiency. The analyzed parameters are absorption spectra, ultimate efficiency, and short circuit current density. The numerical results prove that the proposed structure is superior compared with cone, truncated cone, and cylindrical NWs. The reported design achieves an ultimate efficiency of 44.21% with substrate and back reflector. Further, short circuit current density of 36.17 mA / cm2 is achieved by the suggested NW. The electrical performance analysis of the proposed structure including doping concentration, junction thickness, and Shockley-Read-Hall recombination is also investigated. The electrical simulations show that a power conversion efficiency of 17.21% can be achieved using the proposed NW. The modified nanocone has advantages of broadband absorption enhancement, low cost, and fabrication feasibility.

Simulation of silicon thin-film solar cells for oblique incident waves

NASA Astrophysics Data System (ADS)

Jandl, Christine; Hertel, Kai; Pflaum, Christoph; Stiebig, Helmut

2011-05-01

To optimize the quantum efficiency (QE) and short-circuit current density (JSC) of silicon thin-film solar cells, one has to study the behavior of sunlight in these solar cells. Simulations are an adequate and economic method to analyze the optical properties of light caused by absorption and reflection. To this end a simulation tool is developed to take several demands into account. These include the analysis of perpendicular and oblique incident waves under E-, H- and circularly polarized light. Furthermore, the topology of the nanotextured interfaces influences the efficiency and therefore also the short-circuit current density. It is well known that a rough transparent conductive oxide (TCO) layer increases the efficiency of solar cells. Therefore, it is indispensable that various roughness profiles at the interfaces of the solar cell layers can be modeled in such a way that atomic force microscope (AFM) scan data can be integrated. Numerical calculations of Maxwell's equations based on the finite integration technique (FIT) and Finite Difference Time Domain (FDTD) method are necessary to incorporate all these requirements. The simulations are performed in parallel on high performance computers (HPC) to meet the large computational requirements.

Fabrication & Characterization of AIAS/pSi Heterojunction Solar Cell

NASA Astrophysics Data System (ADS)

Hassun, Hanan K.; Shaban, Auday H.; Salman, Ebtisam M. T.

2018-05-01

Silver Indium Aluminum Selenium AgIn1xAlxSe2 AIAS for x=01 thin films was deposited by thermal evaporation at RT and different thickness 100, 150 and 200 nm on the glass substrate and p2Si wafer to produce AIAS/p3Si heterojunction solar cell 4. Structural optical electrical and photovoltaic properties 6 are investigated for the samples XRD analysis reveals that all the deposited AIAS films show polycrystalline structure without any change due to increase of thickness. Average diameter and roughness calculated from AFM images shows an increase in its value with increasing thickness. The optical absorbance and transmittance for samples are measured using a spectrometer type UV Visible 1800 spectrophotometer to study the energy 6 gap. The electrical properties 7 of heterojunction were obtained by IV8 dark and illuminated 9 and C10V measurement. The ideality 1 factor and the saturation 2 current density were calculated. Under illuminated 3 the open circuit voltage Voc4 short circuit current density Jsc6 fill factor 6FF and quantum efficiencies were calculated. The built in potential 7Vbi carrier concentration and depletion width are measured with different 9 thickness.

Low-dark current 1024×1280 InGaAs PIN arrays

NASA Astrophysics Data System (ADS)

Yuan, Ping; Chang, James; Boisvert, Joseph C.; Karam, Nasser

2014-06-01

Photon counting imaging applications requires low noise from both detector and readout integrated circuit (ROIC) arrays. In order to retain the photon-counting-level sensitivity, a long integration time has to be employed and the dark current has to be minimized. It is well known that the PIN dark current is sensitive to temperature and a dark current density of 0.5 nA/cm2 was demonstrated at 7 °C previously. In order to restrain the size, weight, and power consumption (SWaP) of cameras for persistent large-area surveillance on small platforms, it is critical to develop large format PIN arrays with small pitch and low dark current density at higher operation temperatures. Recently Spectrolab has grown, fabricated and tested 1024x1280 InGaAs PIN arrays with 12.5 μm pitch and achieved 0.7 nA/cm2 dark current density at 15 °C. Based on our previous low-dark-current PIN designs, the improvements were focused on 1) the epitaxial material design and growth control; and 2) PIN device structure to minimize the perimeter leakage current and junction diffusion current. We will present characterization data and analyses that illustrate the contribution of various dark current mechanisms.

A self-powered glucose biosensing system.

PubMed

Slaughter, Gymama; Kulkarni, Tanmay

2016-04-15

A self-powered glucose biosensor (SPGS) system is fabricated and in vitro characterization of the power generation and charging frequency characteristics in glucose analyte are described. The bioelectrodes consist of compressed network of three-dimensional multi-walled carbon nanotubes with redox enzymes, pyroquinoline quinone glucose dehydrogenase (PQQ-GDH) and laccase functioning as the anodic and cathodic catalyst, respectively. When operated in 45 mM glucose, the biofuel cell exhibited an open circuit voltage and power density of 681.8 mV and 67.86 µW/cm(2) at 335 mV, respectively, with a current density of 202.2 µA/cm(2). Moreover, at physiological glucose concentration (5mM), the biofuel cell exhibits open circuit voltage and power density of 302.1 mV and 15.98 µW/cm(2) at 166.3 mV, respectively, with a current density of 100 µA/cm(2). The biofuel cell assembly produced a linear dynamic range of 0.5-45 mM glucose. These findings show that glucose biofuel cells can be further investigated in the development of a self-powered glucose biosensor by using a capacitor as the transducer element. By monitoring the capacitor charging frequencies, which are influenced by the concentration of the glucose analyte, a linear dynamic range of 0.5-35 mM glucose is observed. The operational stability of SPGS is monitored over a period of 63 days and is found to be stable with 15.38% and 11.76% drop in power density under continuous discharge in 10mM and 20mM glucose, respectively. These results demonstrate that SPGSs can simultaneously generate bioelectricity to power ultra-low powered devices and sense glucose. Copyright © 2015 Elsevier B.V. All rights reserved.

Circuit models and three-dimensional electromagnetic simulations of a 1-MA linear transformer driver stage

NASA Astrophysics Data System (ADS)

Rose, D. V.; Miller, C. L.; Welch, D. R.; Clark, R. E.; Madrid, E. A.; Mostrom, C. B.; Stygar, W. A.; Lechien, K. R.; Mazarakis, M. A.; Langston, W. L.; Porter, J. L.; Woodworth, J. R.

2010-09-01

A 3D fully electromagnetic (EM) model of the principal pulsed-power components of a high-current linear transformer driver (LTD) has been developed. LTD systems are a relatively new modular and compact pulsed-power technology based on high-energy density capacitors and low-inductance switches located within a linear-induction cavity. We model 1-MA, 100-kV, 100-ns rise-time LTD cavities [A. A. Kim , Phys. Rev. ST Accel. Beams 12, 050402 (2009)PRABFM1098-440210.1103/PhysRevSTAB.12.050402] which can be used to drive z-pinch and material dynamics experiments. The model simulates the generation and propagation of electromagnetic power from individual capacitors and triggered gas switches to a radially symmetric output line. Multiple cavities, combined to provide voltage addition, drive a water-filled coaxial transmission line. A 3D fully EM model of a single 1-MA 100-kV LTD cavity driving a simple resistive load is presented and compared to electrical measurements. A new model of the current loss through the ferromagnetic cores is developed for use both in circuit representations of an LTD cavity and in the 3D EM simulations. Good agreement between the measured core current, a simple circuit model, and the 3D simulation model is obtained. A 3D EM model of an idealized ten-cavity LTD accelerator is also developed. The model results demonstrate efficient voltage addition when driving a matched impedance load, in good agreement with an idealized circuit model.

Anomalous transport in discrete arcs and simulation of double layers in a model auroral circuit

NASA Technical Reports Server (NTRS)

Smith, Robert A.

1987-01-01

The evolution and long-time stability of a double layer (DL) in a discrete auroral arc requires that the parallel current in the arc, which may be considered uniform at the source, be diverted within the arc to charge the flanks of the U-shaped double layer potential structure. A simple model is presented in which this current redistribution is effected by anomalous transport based on electrostatic lower hybrid waves driven by the flank structure itself. This process provides the limiting constraint on the double layer potential. The flank charging may be represented as that of a nonlinear transmission line. A simplified model circuit, in which the transmission line is represented by a nonlinear impedance in parallel with a variable resistor, is incorporated in a one-dimensional simulation model to give the current density at the DL boundaries. Results are presented for the scaling of the DL potential as a function of the width of the arc and the saturation efficiency of the lower hybrid instability mechanism.

Anomalous transport in discrete arcs and simulation of double layers in a model auroral circuit

NASA Technical Reports Server (NTRS)

Smith, Robert A.

1987-01-01

The evolution and long-time stability of a double layer in a discrete auroral arc requires that the parallel current in the arc, which may be considered uniform at the source, be diverted within the arc to charge the flanks of the U-shaped double-layer potential structure. A simple model is presented in which this current re-distribution is effected by anomalous transport based on electrostatic lower hybrid waves driven by the flank structure itself. This process provides the limiting constraint on the double-layer potential. The flank charging may be represented as that of a nonlinear transmission. A simplified model circuit, in which the transmission line is represented by a nonlinear impedance in parallel with a variable resistor, is incorporated in a 1-d simulation model to give the current density at the DL boundaries. Results are presented for the scaling of the DL potential as a function of the width of the arc and the saturation efficiency of the lower hybrid instability mechanism.

Cathode buffer composed of fullerene-ethylenediamine adduct for an organic solar cell

NASA Astrophysics Data System (ADS)

Kimoto, Yoshinori; Akiyama, Tsuyoshi; Fujita, Katsuhiko

2017-02-01

We developed a fullerene-ethylenediamine adduct (C60P-DC) for a cathode buffer material in organic bulk heterojunction solar cells, which enhance the open-circuit voltage (V oc). The evaporative spray deposition using ultra dilute solution (ESDUS) technique was employed to deposit the buffer layer onto the organic active layer to avoid damage during the deposition. By the insertion of a C60P-DC buffer layer, V oc and power conversion efficiency (PCE) were increased from 0.41 to 0.57 V and from 1.65 to 2.10%, respectively. The electron-only device with the C60P-DC buffer showed a much lower current level than that without the buffer, indicating that the V oc increase is caused not by vacuum level shift but by hole blocking. The curve fitting of current density-voltage (J-V) characteristics to the equivalent circuit with a single diode indicated that the decrease in reversed saturation current by hole blocking increased caused the V oc.

Effects of pH on the electrochemical behaviour of titanium alloys for implant applications.

PubMed

Souza, Maria E P; Lima, Lonetá; Lima, Carmo R P; Zavaglia, Cecília A C; Freire, Célia M A

2009-02-01

The electrochemical behaviour of two commercial titanium alloys Ti-6Al-4 V (ASTM F136) and Ti-13Nb-13Zr (ASTM F1713) was investigated in Ringer physiological solution at two pH values (5.5 and 7.0). The corrosion properties were examined by using electrochemical techniques: Potentiodynamic anodic polarization, cyclic polarization and electrochemical impedance spectroscopy (EIS). The electrochemical corrosion properties of both alloys at different conditions were measured in terms of corrosion potential (E (corr)), corrosion current density (i (corr)) and passivation current density (i (pass)). Equivalent electrical circuits were used to modulate EIS data, in order to characterize alloys surface and better understanding the pH effect on the interface alloy/solution.

Dissection of the Voltage Losses of an Acidic Quinone Redox Flow Battery

DOE PAGES

Chen, Qing; Gerhardt, Michael R.; Aziz, Michael J.

2017-03-28

We measure the polarization characteristics of a quinone-bromide redox flow battery with interdigitated flow fields, using electrochemical impedance spectroscopy and voltammetry of a full cell and of a half cell against a reference electrode. We find linear polarization behavior at 50% state of charge all the way to the short-circuit current density of 2.5 A/cm 2. We uniquely identify the polarization area-specific resistance (ASR) of each electrode, the membrane ASR to ionic current, and the electronic contact ASR. We use voltage probes to deduce the electronic current density through each sheet of carbon paper in the quinone-bearing electrode. By alsomore » interpreting the results using the Newman 1-D porous electrode model, we deduce the volumetric exchange current density of the porous electrode. We uniquely evaluate the power dissipation and identify a correspondence to the contributions to the electrode ASR from the faradaic, electronic, and ionic transport processes. We find that, within the electrode, more power is dissipated in the faradaic process than in the electronic and ionic conduction processes combined, despite the observed linear polarization behavior. We examine the sensitivity of the ASR to the values of the model parameters. The greatest performance improvement is anticipated from increasing the volumetric exchange current density.« less

Integrating a Silicon Solar Cell with a Triboelectric Nanogenerator via a Mutual Electrode for Harvesting Energy from Sunlight and Raindrops.

PubMed

Liu, Yuqiang; Sun, Na; Liu, Jiawei; Wen, Zhen; Sun, Xuhui; Lee, Shuit-Tong; Sun, Baoquan

2018-03-27

Solar cells, as promising devices for converting light into electricity, have a dramatically reduced performance on rainy days. Here, an energy harvesting structure that integrates a solar cell and a triboelectric nanogenerator (TENG) device is built to realize power generation from both sunlight and raindrops. A heterojunction silicon (Si) solar cell is integrated with a TENG by a mutual electrode of a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) film. Regarding the solar cell, imprinted PEDOT:PSS is used to reduce light reflection, which leads to an enhanced short-circuit current density. A single-electrode-mode water-drop TENG on the solar cell is built by combining imprinted polydimethylsiloxane (PDMS) as a triboelectric material combined with a PEDOT:PSS layer as an electrode. The increasing contact area between the imprinted PDMS and water drops greatly improves the output of the TENG with a peak short-circuit current of ∼33.0 nA and a peak open-circuit voltage of ∼2.14 V, respectively. The hybrid energy harvesting system integrated electrode configuration can combine the advantages of high current level of a solar cell and high voltage of a TENG device, promising an efficient approach to collect energy from the environment in different weather conditions.

A High Power Density Single-Phase PWM Rectifier With Active Ripple Energy Storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Ruxi; Wang, Fei; Boroyevich, Dushan

It is well known that single-phase pulse width modulation rectifiers have second-order harmonic currents and corresponding ripple voltages on the dc bus. The low-frequency harmonic current is normally filtered using a bulk capacitor in the bus, which results in low power density. However, pursuing high power density in converter design is a very important goal in the aerospace applications. This paper studies methods for reducing the energy storage capacitor for single-phase rectifiers. The minimum ripple energy storage requirement is derived independently of a specific topology. Based on theminimum ripple energy requirement, the feasibility of the active capacitor s reduction schemesmore » is verified. Then, we propose a bidirectional buck boost converter as the ripple energy storage circuit, which can effectively reduce the energy storage capacitance. The analysis and design are validated by simulation and experimental results.« less

Flexible, transparent and exceptionally high power output nanogenerators based on ultrathin ZnO nanoflakes

NASA Astrophysics Data System (ADS)

van Ngoc, Huynh; Kang, Dae Joon

2016-02-01

Novel nanogenerator structures composed of ZnO nanoflakes of less than 10 nm thickness were fabricated using a novel method involving a facile synthetic route and a rational design. The fabricated nanogenerators exhibited a short-circuit current density of 67 μA cm-2, a peak-to-peak open-circuit voltage of 110 V, and an overall output power density exceeding 1.2 mW cm-2, and to the best of our knowledge, these are the best values that have been reported so far in the literature on ZnO-based nanogenerators. We demonstrated that our nanogenerator design could instantaneously power 20 commercial green light-emitting diodes without any additional energy storage processes. Both the facile synthetic route for the ZnO nanoflakes and the straightforward device fabrication process present great scaling potential in order to power mobile and personal electronics that can be used in smart wearable systems, transparent and flexible devices, implantable telemetric energy receivers, electronic emergency equipment, and other self-powered nano/micro devices.Novel nanogenerator structures composed of ZnO nanoflakes of less than 10 nm thickness were fabricated using a novel method involving a facile synthetic route and a rational design. The fabricated nanogenerators exhibited a short-circuit current density of 67 μA cm-2, a peak-to-peak open-circuit voltage of 110 V, and an overall output power density exceeding 1.2 mW cm-2, and to the best of our knowledge, these are the best values that have been reported so far in the literature on ZnO-based nanogenerators. We demonstrated that our nanogenerator design could instantaneously power 20 commercial green light-emitting diodes without any additional energy storage processes. Both the facile synthetic route for the ZnO nanoflakes and the straightforward device fabrication process present great scaling potential in order to power mobile and personal electronics that can be used in smart wearable systems, transparent and flexible devices, implantable telemetric energy receivers, electronic emergency equipment, and other self-powered nano/micro devices. Electronic supplementary information (ESI) available: FE-SEM images of ZnO NFs grown on textile and FTO/glass substrates, XRD patterns of synthesized ZnO NFs, nitrogen adsorption isotherms for ZnO NWs and ZnO NFs, effect of different coating layers on ZnO NFNGs, P(VDF-TrFE) coating on ZnO NFs, output open-circuit voltages of a textile electrostatic NG based on P(VDF-TrFE) coated on ZnO NFs and a textile ZnO NFNG without an insulating layer generated by a sonic wave, NG-based triboelectric effects and PDMS-coated ZnO NF-based NGs grown on an ITO/PET substrate. See DOI: 10.1039/c5nr08324a

Optimization of return electrodes in neurostimulating arrays

NASA Astrophysics Data System (ADS)

Flores, Thomas; Goetz, Georges; Lei, Xin; Palanker, Daniel

2016-06-01

Objective. High resolution visual prostheses require dense stimulating arrays with localized inputs of individual electrodes. We study the electric field produced by multielectrode arrays in electrolyte to determine an optimal configuration of return electrodes and activation sequence. Approach. To determine the boundary conditions for computation of the electric field in electrolyte, we assessed current dynamics using an equivalent circuit of a multielectrode array with interleaved return electrodes. The electric field modeled with two different boundary conditions derived from the equivalent circuit was then compared to measurements of electric potential in electrolyte. To assess the effect of return electrode configuration on retinal stimulation, we transformed the computed electric fields into retinal response using a model of neural network-mediated stimulation. Main results. Electric currents at the capacitive electrode-electrolyte interface redistribute over time, so that boundary conditions transition from equipotential surfaces at the beginning of the pulse to uniform current density in steady state. Experimental measurements confirmed that, in steady state, the boundary condition corresponds to a uniform current density on electrode surfaces. Arrays with local return electrodes exhibit improved field confinement and can elicit stronger network-mediated retinal response compared to those with a common remote return. Connecting local return electrodes enhances the field penetration depth and allows reducing the return electrode area. Sequential activation of the pixels in large monopolar arrays reduces electrical cross-talk and improves the contrast in pattern stimulation. Significance. Accurate modeling of multielectrode arrays helps optimize the electrode configuration to maximize the spatial resolution, contrast and dynamic range of retinal prostheses.

Mini Photobioreactors for in Vivo Real-Time Characterization and Evolutionary Tuning of Bacterial Optogenetic Circuit.

PubMed

Wang, Hsinkai; Yang, Ya-Tang

2017-09-15

The current standard protocols for characterizing the optogenetic circuit of bacterial cells using flow cytometry in light tubes and light exposure of culture plates are tedious, labor-intensive, and cumbersome. In this work, we engineer a bioreactor with working volume of ∼10 mL for in vivo real-time optogenetic characterization of E. coli with a CcaS-CcaR light-sensing system. In the bioreactor, optical density measurements, reporter protein fluorescence detection, and light input stimuli are provided by four light-emitting diode sources and two photodetectors. Once calibrated, the device can cultivate microbial cells and record their growth and gene expression without human intervention. We measure gene expression during cell growth with different organic substrates (glucose, succinate, acetate, pyruvate) as carbon sources in minimal medium and demonstrate evolutionary tuning of the optogenetic circuit by serial dilution passages.

Matrix Metalloproteinase-9 regulates neuronal circuit development and excitability

PubMed Central

Murase, Sachiko; Lantz, Crystal; Kim, Eunyoung; Gupta, Nitin; Higgins, Richard; Stopfer, Mark; Hoffman, Dax A.; Quinlan, Elizabeth M.

2015-01-01

In early postnatal development, naturally occurring cell death, dendritic outgrowth and synaptogenesis sculpt neuronal ensembles into functional neuronal circuits. Here we demonstrate that deletion of the extracellular proteinase MMP-9 affects each of these processes, resulting in maladapted neuronal circuitry. MMP-9 deletion increases the number of CA1 pyramidal neurons, but decreases dendritic length and complexity while dendritic spine density is unchanged. Parallel changes in neuronal morphology are observed in primary visual cortex, and persist into adulthood. Individual CA1 neurons in MMP-9−/− mice have enhanced input resistance and a significant increase in the frequency, but not amplitude, of miniature excitatory postsynaptic currents (mEPSCs). Additionally, deletion of MMP-9 significant increases spontaneous neuronal activity in awake MMP-9−/− mice and enhances response to acute challenge by the excitotoxin kainate. Thus MMP-9-dependent proteolysis regulates several aspects of circuit maturation to constrain excitability throughout life. PMID:26093382

Graphene composite for improvement in the conversion efficiency of flexible poly 3-hexyl-thiophene:[6,6]-phenyl C{sub 71} butyric acid methyl ester polymer solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chauhan, A. K., E-mail: akchau@barc.gov.in, E-mail: akc.barc@gmail.com; Gusain, Abhay; Jha, P.

2014-03-31

The solution of thin graphene-sheets obtained from a simple ultrasonic exfoliation process was found to chemically interact with [6,6]-phenyl C{sub 71} butyric acid methyl ester (PCBM) molecules. The thinner graphene-sheets have significantly altered the positions of highest occupied molecular orbital and lowest unoccupied molecular orbital of PCBM, which is beneficial for the enhancement of the open circuit voltage of the solar cells. Flexible bulk heterojunction solar cells fabricated using poly 3-hexylthiophene (P3HT):PCBM-graphene exhibited a power conversion efficiency of 2.51%, which is a ∼2-fold increase as compared to those fabricated using P3HT:PCBM. Inclusion of graphene-sheets not only improved the open-circuit voltagemore » but also enhanced the short-circuit current density owing to an improved electron transport.« less

Photo-degradation of high efficiency fullerene-free polymer solar cells.

PubMed

Upama, Mushfika Baishakhi; Wright, Matthew; Mahmud, Md Arafat; Elumalai, Naveen Kumar; Mahboubi Soufiani, Arman; Wang, Dian; Xu, Cheng; Uddin, Ashraf

2017-12-07

Polymer solar cells are a promising technology for the commercialization of low cost, large scale organic solar cells. With the evolution of high efficiency (>13%) non-fullerene polymer solar cells, the stability of the cells has become a crucial parameter to be considered. Among the several degradation mechanisms of polymer solar cells, burn-in photo-degradation is relatively less studied. Herein, we present the first systematic study of photo-degradation of novel PBDB-T:ITIC fullerene-free polymer solar cells. The thermally treated and as-prepared PBDB-T:ITIC solar cells were exposed to continuous 1 sun illumination for 5 hours. The aged devices exhibited rapid losses in the short-circuit current density and fill factor. The severe short-circuit current and fill factor burn in losses were attributed to trap mediated charge recombination, as evidenced by an increase in Urbach energy for aged devices.

Spray pyrolyzed Cu2SnS3 thin films for photovoltaic application

NASA Astrophysics Data System (ADS)

Patel, Biren; Waldiya, Manmohansingh; Pati, Ranjan K.; Mukhopadhyay, Indrajit; Ray, Abhijit

2018-05-01

We report the fabrication of Cu2SnS3 (CTS) thin films by a non-vacuum and low cost spray pyrolysis technique. Annealing of the as-deposited film in the sulphur atmosphere produces highly stoichiometric, granular and crystalline CTS phase. The CTS thin films shows direct optical band gap of 1.58 eV with high absorption coefficient of 105 cm-1. Hall measurement shows the carrier concentration of the order of 1021 cm-3 and a favourable resistivity of 10-3 Ω cm. A solar cell architecture of Glass/FTO/CTS/CdS/Al:ZnO/Al was fabricated and its current-voltage characteristic shows an open circuit voltage, short circuit current density and fill-factor of 12.6 mV, 20.2 µA/cm2 and 26% respectively. A further improvement in the solar cell parameters is underway.

The effects of interfacial recombination and injection barrier on the electrical characteristics of perovskite solar cells

NASA Astrophysics Data System (ADS)

Shi, Lin Xing; Wang, Zi Shuai; Huang, Zengguang; Sha, Wei E. I.; Wang, Haoran; Zhou, Zhen

2018-02-01

Charge carrier recombination in the perovskite solar cells (PSCs) has a deep influence on the electrical performance, such as open circuit voltage, short circuit current, fill factor and ultimately power conversion efficiency. The impacts of injection barrier, recombination channels, doping properties of carrier transport layers and light intensity on the performance of PSCs are theoretically investigated by drift-diffusion model in this work. The results indicate that due to the injection barrier at the interfaces of perovskite and carrier transport layer, the accumulated carriers modify the electric field distribution throughout the PSCs. Thus, a zero electric field is generated at a specific applied voltage, with greatly increases the interfacial recombination, resulting in a local kink of current density-voltage (J-V) curve. This work provides an effective strategy to improve the efficiency of PSCs by pertinently reducing both the injection barrier and interfacial recombination.

Reduction of Crosshatch Roughness and Threading Dislocation Density in Metamorphic GaInP Buffers and GaInAs Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

France, R. M.; Geisz, J. F.; Steiner, M. A.

Surface crosshatch roughness typically develops during the growth of lattice-mismatched compositionally graded buffers and can limit misfit dislocation glide. In this study, the crosshatch roughness during growth of a compressive GaInP/GaAs graded buffer is reduced by increasing the phosphine partial pressure throughout the metamorphic growth. Changes in the average misfit dislocation length are qualitatively determined by characterizing the threading defect density and residual strain. The decrease of crosshatch roughness leads to an increase in the average misfit dislocation glide length, indicating that the surface roughness is limiting dislocation glide. Growth rate is also analyzed as a method to reduce surfacemore » crosshatch roughness and increase glide length, but has a more complicated relationship with glide kinetics. Using knowledge gained from these experiments, high quality inverted GaInAs 1 eV solar cells are grown on a GaInP compositionally graded buffer with reduced roughness and threading dislocation density. The open circuit voltage is only 0.38 V lower than the bandgap potential at a short circuit current density of 15 mA/cm{sup 2}, suggesting that there is very little loss due to the lattice mismatch.« less

Demonstration of a 4H SiC Betavoltaic Nuclear Battery Based on Schottky Barrier Diode

NASA Astrophysics Data System (ADS)

Qiao, Da-Yong; Yuan, Wei-Zheng; Gao, Peng; Yao, Xian-Wang; Zang, Bo; Zhang, Lin; Guo, Hui; Zhang, Hong-Jian

2008-10-01

A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4 mCi/cm2 an open circuit voltage of 0.49 V and a short circuit current density of 29.44 nA/cm2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device.

High Efficiency Single Output ZVS-ZCS Voltage Doubled Flyback Converter

NASA Astrophysics Data System (ADS)

Kaliyaperumal, Deepa; Saju, Hridya Merin; Kumar, M. Vijaya

2016-06-01

A switch operating at high switching frequency increases the switching losses of the converter resulting in lesser efficiency. Hence this paper proposes a new topology which has resonant switches [zero voltage switching (ZVS)] in the primary circuit to eliminate the above said disadvantages, and voltage doubler zero current switching (ZCS) circuit in the secondary to double the output voltage, and hence the output power, power density and efficiency. The design aspects of the proposed topology for a single output of 5 V at 50 kHz, its simulation and hardware results are discussed in detail. The analysis of the results obtained from a 2.5 W converter reveals the superiority of the proposed converter.

Optimization of the parameters of ITO-CdTe photovoltaic cells

NASA Astrophysics Data System (ADS)

Adib, N.; Simashkevich, A. V.; Sherban, D. A.

The effect of the surface state density at the interface and of the static charge in the intermediate oxide layer on the photoelectric parameters of solar cells based on ITO-nCdTe semiconductor-insulator-semiconductor structures is calculated theoretically. It is shown that,under AMI conditions, the conversion efficiency of such cells can be as high as 12 percent (short-circuit current, 23 mA/sq cm; open-circuit voltage, 0.65 V; fill factor, 0.8), provided that the surface states are acceptors and the oxide is negatively charged. It is concluded that surface states and the dielectric layer charge have a positive effect on the efficiency of solar cells of this type.

Three-phase short circuit calculation method based on pre-computed surface for doubly fed induction generator

NASA Astrophysics Data System (ADS)

Ma, J.; Liu, Q.

2018-02-01

This paper presents an improved short circuit calculation method, based on pre-computed surface to determine the short circuit current of a distribution system with multiple doubly fed induction generators (DFIGs). The short circuit current, injected into power grid by DFIG, is determined by low voltage ride through (LVRT) control and protection under grid fault. However, the existing methods are difficult to calculate the short circuit current of DFIG in engineering practice due to its complexity. A short circuit calculation method, based on pre-computed surface, was proposed by developing the surface of short circuit current changing with the calculating impedance and the open circuit voltage. And the short circuit currents were derived by taking into account the rotor excitation and crowbar activation time. Finally, the pre-computed surfaces of short circuit current at different time were established, and the procedure of DFIG short circuit calculation considering its LVRT was designed. The correctness of proposed method was verified by simulation.

[Copper recovery from artificial bioleaching lixivium of waste printed circuit boards].

PubMed

Cheng, Dan; Zhu, Neng-Wu; Wu, Ping-Xiao; Zou, Ding-Hui; Xing, Yi-Jia

2014-04-01

The key step to realize metal recovery from bioleaching solutions is the recovery of copper from bioleaching lixivium of waste printed circuit boards in high-grade form. The influences of cathode material, current density, initial pH and initial copper ion concentration on the efficiency and energy consumption of copper recovery from artificial bioleaching lixivium under condition of constant current were investigated using an electro-deposition approach. The results showed that the larger specific surface area of the cathode material (carbon felt) led to the higher copper recovery efficiency (the recovery efficiencies of the anode and the cathode chambers were 96.56% and 99.25%, respectively) and the smaller the total and unit mass product energy consumption (the total and unit mass product energy consumptions were 0.022 kW x h and 15.71 kW x h x kg(-1), respectively). The copper recovery efficiency and energy consumption increased with the increase of current density. When the current density was 155.56 mA x cm(-2), the highest copper recovery efficiencies in the anode and cathode chambers reached 98.51% and 99.37%, respectively. Accordingly, the highest total and unit mass product energy consumptions were 0.037 kW x h and 24.34 kW x h x kg(-1), respectively. The copper recovery efficiency was also significantly affected by the initial copper ion concentration. The increase of the initial copper ion concentration would lead to faster decrease of copper ion concentration, higher total energy consumption, and lower unit mass product consumption. However, the initial pH had no significant effect on the copper recovery efficiency. Under the optimal conditions (carbon felt for cathode materials, current density of 111.11 mA x cm(-2), initial pH of 2.0, and initial copper ion concentration of 10 g x L(-1)), the copper recovery efficiencies of the anode and cathode chambers were 96.75% and 99.35%, and the total and unit mass product energy consumptions were 0.021 kW x h and 14.61 kW x h x kg(-1), respectively. The deposited copper on the cathode material was fascicularly distributed and no oxygen was detected.

Illumination effects on the ferroelectric and photovoltaic properties of Pb0.95La0.05Zr0.54Ti0.46O3 thin film based asymmetric MFM structure

NASA Astrophysics Data System (ADS)

Batra, V.; Kotru, S.

2017-12-01

We report the effects of illumination on the ferroelectric and photovoltaic properties of the Pb0.95La0.05Zr0.54Ti0.46O3 (PLZT) thin film based asymmetric metal/ferroelectric/metal capacitor structure, using Au as a top electrode and Pt as a bottom electrode. Conductive-AFM (atomic force microscopy) measurements demonstrate the evolution of charge carriers in PLZT films on illumination. The capacitance-voltage, the polarization-electric field, and the leakage current-voltage characteristics of the asymmetric Au/PLZT/Pt capacitor are discussed under dark and illuminated conditions. The light generates charge carriers in the film, which increase the coercive field and net remnant polarization and decrease the capacitance. The leakage current of the capacitor increases by an order of magnitude upon illumination. The leakage current data analyzed to study the conduction mechanism shows that the capacitor structure follows the Schottky emission "1/4" law. The illuminated current density-voltage curve of the capacitor shows non-zero photovoltaic parameters. An open circuit voltage (Voc) of -0.19 V and a short circuit current density (Jsc) of 1.48 μA/cm2 were obtained in an unpoled film. However, after positive poling, the illuminated curve shifts towards a higher voltage value resulting in a Voc of -0.93 V. After negative poling, the curve shows no change in the Voc value. For both poling directions, the Jsc values decrease. The photocurrent in the capacitor shows a linear variation with the incident illumination intensity.

30 CFR 75.900 - Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit...

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Low- and medium-voltage circuits serving three... STANDARDS-UNDERGROUND COAL MINES Underground Low- and Medium-Voltage Alternating Current Circuits § 75.900 Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit breakers...

30 CFR 77.900 - Low- and medium-voltage circuits serving portable or mobile three-phase alternating current...

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Low- and medium-voltage circuits serving... Medium-Voltage Alternating Current Circuits § 77.900 Low- and medium-voltage circuits serving portable or mobile three-phase alternating current equipment; circuit breakers. Low- and medium-voltage circuits...

30 CFR 75.900 - Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit...

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Low- and medium-voltage circuits serving three... STANDARDS-UNDERGROUND COAL MINES Underground Low- and Medium-Voltage Alternating Current Circuits § 75.900 Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit breakers...

30 CFR 75.900 - Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit...

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low- and medium-voltage circuits serving three... STANDARDS-UNDERGROUND COAL MINES Underground Low- and Medium-Voltage Alternating Current Circuits § 75.900 Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit breakers...

30 CFR 77.900 - Low- and medium-voltage circuits serving portable or mobile three-phase alternating current...

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low- and medium-voltage circuits serving... Medium-Voltage Alternating Current Circuits § 77.900 Low- and medium-voltage circuits serving portable or mobile three-phase alternating current equipment; circuit breakers. Low- and medium-voltage circuits...

30 CFR 77.900 - Low- and medium-voltage circuits serving portable or mobile three-phase alternating current...

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Low- and medium-voltage circuits serving... Medium-Voltage Alternating Current Circuits § 77.900 Low- and medium-voltage circuits serving portable or mobile three-phase alternating current equipment; circuit breakers. Low- and medium-voltage circuits...

Comparison the performance of carbon plate and Pt-loaded carbon in photocatalytic fuel cell (PFC) process

NASA Astrophysics Data System (ADS)

Khalik, Wan Fadhilah; Ong, Soon-An; Ho, Li-Ngee; Voon, Chun-Hong; Wong, Yee-Shian; Yusoff, Nik Athirah; Lee, Sin-Li

2017-04-01

The objective of this study is to compare the performance of cathode electrode in photocatalytic fuel cell (PFC) system under UV light irradiation. The initial concentration 10 mg/L of Reactive Black 5 (RB5) with carbon plate (CP) and Pt-loaded carbon (Pt/C) as cathode reduced to 2.052 and 0.549 mg/L, respectively, after 24 h irradiated by UV light. The value for open circuit voltage, Voc, short-circuit current density, Jsc and maximum power density, Pmax for CP was 0.825 V, 0.00035 mA/cm2 and 0.000063 mW/cm2, respectively, meanwhile Voc, Jsc and Pmax for Pt/C was 1.15 V, 0.0015 mA/cm2 and 0.000286 mW/cm2, respectively, by varying external resistor value from 300 kΩ to 10 Ω. The degradation of RB5 and generation of electricity with Pt/C as cathode showed greater performance than CP.

High power density from a miniature microbial fuel cell using Shewanella oneidensis DSP10.

PubMed

Ringeisen, Bradley R; Henderson, Emily; Wu, Peter K; Pietron, Jeremy; Ray, Ricky; Little, Brenda; Biffinger, Justin C; Jones-Meehan, Joanne M

2006-04-15

A miniature microbial fuel cell (mini-MFC) is described that demonstrates high output power per device cross-section (2.0 cm2) and volume (1.2 cm3). Shewanella oneidensis DSP10 in growth medium with lactate and buffered ferricyanide solutions were used as the anolyte and catholyte, respectively. Maximum power densities of 24 and 10 mW/m2 were measured using the true surface areas of reticulated vitreous carbon (RVC) and graphite felt (GF) electrodes without the addition of exogenous mediators in the anolyte. Current densities at maximum power were measured as 44 and 20 mA/m2 for RVC and GF, while short circuit current densities reached 32 mA/m2 for GF anodes and 100 mA/m2 for RVC. When the power density for GF was calculated using the cross sectional area of the device or the volume of the anode chamber, we found values (3 W/m2, 500 W/m3) similar to the maxima reported in the literature. The addition of electron mediators resulted in current and power increases of 30-100%. These power densities were surprisingly high considering a pure S. oneidensis culture was used. We found that the short diffusion lengths and high surface-area-to-chamber volume ratio utilized in the mini-MFC enhanced power density when compared to output from similar macroscopic MFCs.

High current densities enable exoelectrogens to outcompete aerobic heterotrophs for substrate.

PubMed

Ren, Lijiao; Zhang, Xiaoyuan; He, Weihua; Logan, Bruce E

2014-11-01

In mixed-culture microbial fuel cells (MFCs), exoelectrogens and other microorganisms compete for substrate. It has previously been assumed that substrate losses to other terminal electron acceptors over a fed-batch cycle, such as dissolved oxygen, are constant. However, a constant rate of substrate loss would only explain small increases in coulombic efficiencies (CEs, the fraction of substrate recovered as electrical current) with shorter cycle times, but not the large increases in CE that are usually observed with higher current densities and reduced cycle times. To better understand changes in CEs, COD concentrations were measured over time in fed-batch, single-chamber, air-cathode MFCs at different current densities (external resistances). COD degradation rates were all found to be first-order with respect to COD concentration, even under open circuit conditions with no current generation (first-order rate constant of 0.14 ± 0.01 h(-1) ). The rate of COD removal increased when there was current generation, with the highest rate constant (0.33 ± 0.02 h(-1) ) obtained at the lowest external resistance (100 Ω). Therefore, as the substrate concentration was reduced more quickly due to current generation, the rate of loss of substrate to non-exoelectrogens decreased due to this first-order substrate-concentration dependence. As a result, coulombic efficiencies rapidly increased due to decreased, and not constant, removal rates of substrate by non-exoelectrogens. These results show that higher current densities (lower resistances) redirect a greater percentage of substrate into current generation, enabling large increase in CEs with increased current densities. Biotechnol. Bioeng. 2014;111: 2163-2169. © 2014 Wiley Periodicals, Inc. © 2014 Wiley Periodicals, Inc.

Measurement of the densities of Cu and Ag vapours in a low-voltage switch using the hook method

NASA Astrophysics Data System (ADS)

Lins, Günter

2012-05-01

In a research model of a low-voltage circuit breaker with fixed contacts and windows for optical access, arcs powered by either a high-current transformer or a capacitor bank were initiated by the explosion of tungsten wires. Air at atmospheric pressure was the switching medium. The number densities of neutral silver and copper vapours from contacts and arc runners were measured simultaneously by the hook method using a Mach-Zehnder interferometer combined with a 1 m spectrograph and a gated intensified CCD camera. When an arc current was flowing, a substantial fraction of the metal vapour was ionized, and thus not amenable to a density measurement with the technique chosen. To nevertheless obtain approximate density values, the arc current was forced to zero within 8 to 10 µs at a preset time and measurements were carried out 100 µs after extinction of the arc. At that time the metal vapour was expected to have recombined to a large extent but not yet diffused to the walls in significant amounts. Depending on the current amplitude reached within the arc duration the arc remained anchored to the silver contacts or commutated to the copper arc runners. At a maximum current amplitude of 650 A Ag vapour densities of the order of 1022 m-3 were observed near the anode outweighing the Cu vapour density by a factor of 20. When at 1600 A the arc commutated to the arc runners a Cu vapour density of 8 × 1021 m-3 was reached while the Ag density remained limited to 2 × 1021 m-3.

Impact of hydrogen dilution on optical properties of intrinsic hydrogenated amorphous silicon films prepared by high density plasma chemical vapor deposition for solar cell applications

NASA Astrophysics Data System (ADS)

Chen, Huai-Yi; Lee, Yao-Jen; Chang, Chien-Pin; Koo, Horng-Show; Lai, Chiung-Hui

2013-01-01

P-i-n single-junction hydrogenated amorphous silicon (a-Si:H) thin film solar cells were successfully fabricated in this study on a glass substrate by high density plasma chemical vapor deposition (HDP-CVD) at low power of 50 W, low temperature of 200°C and various hydrogen dilution ratios (R). The open circuit voltage (Voc ), short circuit current density (Jsc ), fill factor (FF) and conversion efficiency (η) of the solar cell as well as the refractive index (n) and absorption coefficient (α) of the i-layer at 600 nm wavelength rise with increasing R until an abrupt drop at high hydrogen dilution, i.e. R > 0.95. However, the optical energy bandgap (Eg ) of the i-layer decreases with the R increase. Voc and α are inversely correlated with Eg . The hydrogen content affects the i-layer and p/i interface quality of the a-Si:H thin film solar cell with an optimal value of R = 0.95, which corresponds to solar cell conversion efficiency of 3.85%. The proposed a-Si:H thin film solar cell is expected to be improved in performance.

High-injection effects in near-field thermophotovoltaic devices.

PubMed

Blandre, Etienne; Chapuis, Pierre-Olivier; Vaillon, Rodolphe

2017-11-20

In near-field thermophotovoltaics, a substantial enhancement of the electrical power output is expected as a result of the larger photogeneration of electron-hole pairs due to the tunneling of evanescent modes from the thermal radiator to the photovoltaic cell. The common low-injection approximation, which considers that the local carrier density due to photogeneration is moderate in comparison to that due to doping, needs therefore to be assessed. By solving the full drift-diffusion equations, the existence of high-injection effects is studied in the case of a GaSb p-on-n junction cell and a radiator supporting surface polaritons. Depending on doping densities and surface recombination velocity, results reveal that high-injection phenomena can already take place in the far field and become very significant in the near field. Impacts of high injection on maximum electrical power, short-circuit current, open-circuit voltage, recombination rates, and variations of the difference between quasi-Fermi levels are analyzed in detail. By showing that an optimum acceptor doping density can be estimated, this work suggests that a detailed and accurate modeling of the electrical transport is also key for the design of near-field thermophotovoltaic devices.

Epitaxial solar-cell fabrication, phase 2

NASA Technical Reports Server (NTRS)

Daiello, R. V.; Robinson, P. H.; Kressel, H.

1977-01-01

Dichlorosilane (SiH2Cl2) was used as the silicon source material in all of the epitaxial growths. Both n/p/p(+) and p/n/n(+) structures were studied. Correlations were made between the measured profiles and the solar cell parameters, especially cell open-circuit voltage. It was found that in order to obtain consistently high open-circuit voltage, the epitaxial techniques used to grow the surface layer must be altered to obtain very abrupt doping profiles in the vicinity of the junction. With these techniques, it was possible to grow reproducibly both p/n/n(+) and n/p/p(+) solar cell structures having open-circuit voltages in the 610- to 630-mV range, with fill-factors in excess of 0.80 and AM-1 efficiencies of about 13%. Combinations and comparisons of epitaxial and diffused surface layers were also made. Using such surface layers, we found that the blue response of epitaxial cells could be improved, resulting in AM-1 short-circuit current densities of about 30 mA/cm sq. The best cells fabricated in this manner had AM-1 efficiency of 14.1%.

Origin of nonsaturating linear magnetoresistivity

NASA Astrophysics Data System (ADS)

Kisslinger, Ferdinand; Ott, Christian; Weber, Heiko B.

2017-01-01

The observation of nonsaturating classical linear magnetoresistivity has been an enigmatic phenomenon in solid-state physics. We present a study of a two-dimensional ohmic conductor, including local Hall effect and a self-consistent consideration of the environment. An equivalent-circuit scheme delivers a simple and convincing argument why the magnetoresistivity is linear in strong magnetic field, provided that current and biasing electric field are misaligned by a nonlocal mechanism. A finite-element model of a two-dimensional conductor is suited to display the situations that create such deviating currents. Besides edge effects next to electrodes, charge carrier density fluctuations are efficiently generating this effect. However, mobility fluctuations that have frequently been related to linear magnetoresistivity are barely relevant. Despite its rare observation, linear magnetoresitivity is rather the rule than the exception in a regime of low charge carrier densities, misaligned current pathways and strong magnetic field.

Modeling recombination processes and predicting energy conversion efficiency of dye sensitized solar cells from first principles

NASA Astrophysics Data System (ADS)

Ma, Wei; Meng, Sheng

2014-03-01

We present a set of algorithms based on solo first principles calculations, to accurately calculate key properties of a DSC device including sunlight harvest, electron injection, electron-hole recombination, and open circuit voltages. Two series of D- π-A dyes are adopted as sample dyes. The short circuit current can be predicted by calculating the dyes' photo absorption, and the electron injection and recombination lifetime using real-time time-dependent density functional theory (TDDFT) simulations. Open circuit voltage can be reproduced by calculating energy difference between the quasi-Fermi level of electrons in the semiconductor and the electrolyte redox potential, considering the influence of electron recombination. Based on timescales obtained from real time TDDFT dynamics for excited states, the estimated power conversion efficiency of DSC fits nicely with the experiment, with deviation below 1-2%. Light harvesting efficiency, incident photon-to-electron conversion efficiency and the current-voltage characteristics can also be well reproduced. The predicted efficiency can serve as either an ideal limit for optimizing photovoltaic performance of a given dye, or a virtual device that closely mimicking the performance of a real device under different experimental settings.

The Equivalent Electrokinetic Circuit Model of Ion Concentration Polarization Layer: Electrical Double Layer, Extended Space Charge and Electro-convection

NASA Astrophysics Data System (ADS)

Cho, Inhee; Huh, Keon; Kwak, Rhokyun; Lee, Hyomin; Kim, Sung Jae

2016-11-01

The first direct chronopotentiometric measurement was provided to distinguish the potential difference through the extended space charge (ESC) layer which is formed with the electrical double layer (EDL) near a perm-selective membrane. From this experimental result, the linear relationship was obtained between the resistance of ESC and the applied current density. Furthermore, we observed the step-wise distributions of relaxation time at the limiting current regime, confirming the existence of ESC capacitance other than EDL's. In addition, we proposed the equivalent electrokinetic circuit model inside ion concentration polarization (ICP) layer under rigorous consideration of EDL, ESC and electro-convection (EC). In order to elucidate the voltage configuration in chronopotentiometric measurement, the EC component was considered as the "dependent voltage source" which is serially connected to the ESC layer. This model successfully described the charging behavior of the ESC layer with or without EC, where both cases determined each relaxation time, respectively. Finally, we quantitatively verified their values utilizing the Poisson-Nernst-Planck equations. Therefore, this unified circuit model would provide a key insight of ICP system and potential energy-efficient applications.

Novel patterning of CdS / CdTe thin film with back contacts for photovoltaic application

NASA Astrophysics Data System (ADS)

Ilango, Murugaiya Sridar; Ramasesha, Sheela K.

2018-04-01

The heterostructure of patterned CdS / CdTe thin films with back contact have been devised with electron beam lithography and fabricated using sputter deposition technique. The metallic contacts for n-CdS and p-CdTe are patterned such that both are placed at the bottom of the cell. This avoids losses due to contact shading and increases absorption in the window layer. Patterning of the device surface helps in increasing the junction area which can modulate the absorption of more number of photons due to total internal reflection. Computing the surface area between a planar and a patterned device has revealed 133% increase in the junction area. The physical and optical properties of the sputter-deposited CdS / CdTe layers are also presented. J- V characteristics of the solar cell showed the fill factor to be 25.9%, open circuit voltage to be 17 mV and short-circuit current density to be 113.68 A/m2. The increase in surface area is directly related to the increase in the short circuit current of the photovoltaic cell, which is observed from the results of simulated model in Atlas / Silvaco.

CIRCUITS FOR CURRENT MEASUREMENTS

DOEpatents

Cox, R.J.

1958-11-01

Circuits are presented for measurement of a logarithmic scale of current flowing in a high impedance. In one form of the invention the disclosed circuit is in combination with an ionization chamber to measure lonization current. The particular circuit arrangement lncludes a vacuum tube having at least one grid, an ionization chamber connected in series with a high voltage source and the grid of the vacuum tube, and a d-c amplifier feedback circuit. As the ionization chamber current passes between the grid and cathode of the tube, the feedback circuit acts to stabilize the anode current, and the feedback voltage is a measure of the logaritbm of the ionization current.

High-performance, lattice-mismatched InGaAs/InP monolithic interconnected modules (MIMs)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fatemi, Navid S.; Wilt, David M.; Hoffman, Richard W.

1999-03-01

High performance, lattice-mismatched p/n InGaAs/InP monolithic interconnected module (MIM) structures were developed for thermophotovoltaic (TPV) applications. A MIM device consists of several individual InGaAs photovoltaic (PV) cells series-connected on a single semi-insulating (S.I.) InP substrate. Both interdigitated and conventional (i.e., non-interdigitated) MIMs were fabricated. The energy bandgap (Eg) for these devices was 0.60 eV. A compositionally step-graded InPAs buffer was used to accommodate a lattice mismatch of 1.1{percent} between the active InGaAs cell structure and the InP substrate. 1{times}1-cm, 15-cell, 0.60-eV MIMs demonstrated an open-circuit voltage (Voc) of 5.2 V (347 mV per cell) and a fill factor of 68.6{percent}more » at a short-circuit current density (Jsc) of 2.0 A/cm{sup 2}, under flashlamp testing. The reverse saturation current density (Jo) was 1.6{times}10{sup {minus}6}&hthinsp;A/cm{sup 2}. Jo values as low as 4.1{times}10{sup {minus}7}&hthinsp;A/cm{sup 2} were also observed with a conventional planar cell geometry. {copyright} {ital 1999 American Institute of Physics.}« less

Temperature effect on betavoltaic microbatteries based on Si and GaAs under 63Ni and 147Pm irradiation

NASA Astrophysics Data System (ADS)

Wang, Hao; Tang, Xiao-bin; Liu, Yun-Peng; Xu, Zhi-Heng; Liu, Min; Chen, Da

2015-09-01

The effect of temperature on the output performance of four different types of betavoltaic microbatteries was investigated experimental and theoretical. Si and GaAs were selected as the energy conversion devices in four types of betavoltaic microbatteries, and 63Ni and 147Pm were used as beta sources. Current density-voltage curves were determined at a temperature range of 213.15-333.15 K. A simplified method was used to calculate the theoretical parameters of the betavoltaic microbatteries considering the energy loss of beta particles for self-absorption of radioactive source, the electron backscatter effect of different types of semiconductor materials, and the absorption of dead layer. Both the experimental and theoretical results show that the short-circuit current density increases slightly and the open-circuit voltage (VOC) decreases evidently with the increase in temperature. Different combinations of energy conversion devices and beta sources cause different effects of temperature on the microbatteries. In the approximately linear range, the VOC sensitivities caused by temperature for 63Ni-Si, 63Ni-GaAs, 147Pm-Si, and 147Pm-GaAs betavoltaic microbatteries were -2.57, -5.30, -2.53, and -4.90 mV/K respectively. Both theoretical and experimental energy conversion efficiency decreased evidently with the increase in temperature.

Efficient electricity production and simultaneously wastewater treatment via a high-performance photocatalytic fuel cell.

PubMed

Liu, Yanbiao; Li, Jinhua; Zhou, Baoxue; Li, Xuejin; Chen, Hongchong; Chen, Quanpeng; Wang, Zhongsheng; Li, Lei; Wang, Jiulin; Cai, Weimin

2011-07-01

A great quantity of wastewater were discharged into water body, causing serious environmental pollution. Meanwhile, the organic compounds in wastewater are important sources of energy. In this work, a high-performance short TiO(2) nanotube array (STNA) electrode was applied as photoanode material in a novel photocatalytic fuel cell (PFC) system for electricity production and simultaneously wastewater treatment. The results of current work demonstrate that various model compounds as well as real wastewater samples can be used as substrates for the PFC system. As a representative of model compounds, the acetic acid solution produces the highest cell performance with short-circuit current density 1.42 mA cm(-2), open-circuit voltage 1.48 V and maximum power density output 0.67 mW cm(-2). The STNA photoanode reveals obviously enhanced cell performance compared with TiO(2) nanoparticulate film electrode or other long nanotubes electrode. Moreover, the photoanode material, electrolyte concentration, pH of the initial solution, and cathode material were found to be important factors influencing the system performance of PFC. Therefore, the proposed fuel cell system provides a novel way of energy conversion and effective disposal mode of organics and serves well as a promising technology for wastewater treatment. Copyright © 2011 Elsevier Ltd. All rights reserved.

A flat-panel-shaped hybrid piezo/triboelectric nanogenerator for ambient energy harvesting

NASA Astrophysics Data System (ADS)

Hassan, Gul; Khan, Fasihullah; Hassan, Arshad; Ali, Shawkat; Bae, Jinho; Lee, Chong Hyun

2017-04-01

Recently, many researchers have been paying attention to nanogenerators (NGs) as energy sources for self-powered mirco-nano systems, and studying how to achieve their higher power generation. Hence, we propose a hybrid-type NG for harvesting both the piezoelectric and triboelectric effect simultaneously. In the proposed hybrid NG, the piezoelectric NG (PNG) and triboelectric NG (TENG) are fabricated using polydimethylsiloxane (PDMS) and perovskite zinc stannite (ZnSnO3) nanocubes with a high charge polarization of 59 uC cm-2 composite (PDMS + ZnSnO3) and UV surface-treated PDMS, respectively. To effectively combine a high output current of PNG and a high voltage of TENG, these two NGs are stacked upon each other, and separated by sponge spacers providing a uniform air gap for the triboelectric effect. In particular, this fabricated structure has a low Young’s modulus for piezoelectricity. The proposed hybrid NG device effectively achieves a combined peak voltage of 300 V on an open circuit, a power density of 10.41 mW cm-2 at 1 MΩ load, and a maximum short circuit current density of 16 mA cm-2 at 50 Ω load. It is feasible that the proposed NG can be utilized as a source for various self-powered systems.

Growth of Well-Aligned ZnO Nanorod Arrays and Their Application for Photovoltaic Devices

NASA Astrophysics Data System (ADS)

Yuan, Zhaolin; Yao, Juncai

2017-11-01

We have fabricated well-aligned ZnO nanorod arrays (ZNRAs) on indium tin oxide-coated glass substrates by a facile chemical bath deposition method. We used field-emission scanning electron microscope, x-ray diffraction and UV-Vis absorption spectroscopy to study the morphology, crystalline structure and optical absorption of the fabricated ZNRAs, respectively. The results showed that ZnO nanorods stood almost perpendicularly on the substrate, were about 30-50 nm in diameter and 800-900 nm in length, and were wurtzite-structured (hexagonal) ZnO. In addition, well-aligned ZNRAs exhibited a weak absorption in the visible region and had an optical band gap value of 3.28 eV. Furthermore, a hybrid ZNRAs/polymer photovoltaic device was made, under 1 sun AM 1.5 illumination (light intensity, ˜100 mW/cm2), and the device showed an open circuit voltage ( V oc) of 0.32 V, a short circuit current density ( J sc) of 7.67 mA/cm2, and a fill factor ( FF) of 0.37, yielding an overall power conversion efficiency of 0.91%. Also, the exciton dissociation and transportation processes of charge carriers in the device under illumination were explained according to its current density-voltage ( J- V) curve and the energy level diagram.

Faster Hall-Effect Current-Measuring Circuit

NASA Technical Reports Server (NTRS)

Sullender, Craig C.; Johnson, Daniel D.; Walker, Daniel D.

1993-01-01

Current-measuring circuit operates on Hall-effect-sensing and magnetic-field-nulling principles similar to those described in article, "Nulling Hall-Effect Current-Measuring Circuit" (LEW-15023), but simpler and responds faster. Designed without feedback loop, and analog pulse-width-modulated output indicates measured current. Circuit measures current at frequency higher than bandwidth of its Hall-effect sensor.

Measurement of electron density using reactance cutoff probe

DOE Office of Scientific and Technical Information (OSTI.GOV)

You, K. H.; Seo, B. H.; Kim, J. H.

2016-05-15

This paper proposes a new measurement method of electron density using the reactance spectrum of the plasma in the cutoff probe system instead of the transmission spectrum. The highly accurate reactance spectrum of the plasma-cutoff probe system, as expected from previous circuit simulations [Kim et al., Appl. Phys. Lett. 99, 131502 (2011)], was measured using the full two-port error correction and automatic port extension methods of the network analyzer. The electron density can be obtained from the analysis of the measured reactance spectrum, based on circuit modeling. According to the circuit simulation results, the reactance cutoff probe can measure themore » electron density more precisely than the previous cutoff probe at low densities or at higher pressure. The obtained results for the electron density are presented and discussed for a wide range of experimental conditions, and this method is compared with previous methods (a cutoff probe using the transmission spectrum and a single Langmuir probe).« less

Atmosphere-Ionosphere Electrodynamic Coupling

NASA Astrophysics Data System (ADS)

Sorokin, V. M.; Chmyrev, V. M.

Numerous phenomena that occur in the mesosphere, ionosphere, and the magnetosphere of the Earth are caused by the sources located in the lower atmosphere and on the ground. We describe the effects produced by lightning activity and by ground-based transmitters operated in high frequency (HF) and very low frequency (VLF) ranges. Among these phenomena are the ionosphere heating and the formation of plasma density inhomogeneities, the excitation of gamma ray bursts and atmospheric emissions in different spectral bands, the generation of ULF/ELF/VLF electromagnetic waves and plasma turbulence in the ionosphere, the stimulation of radiation belt electron precipitations and the acceleration of ions in the upper ionosphere. The most interesting results of experimental and theoretical studies of these phenomena are discussed below. The ionosphere is subject to the action of the conductive electric current flowing in the atmosphere-ionosphere circuit. We present a physical model of DC electric field and current formation in this circuit. The key element of this model is an external current, which is formed with the occurrence of convective upward transport of charged aerosols and their gravitational sedimentation in the atmosphere. An increase in the level of atmospheric radioactivity results in the appearance of additional ionization and change of electrical conductivity. Variation of conductivity and external current in the lower atmosphere leads to perturbation of the electric current flowing in the global atmosphere-ionosphere circuit and to the associated DC electric field perturbation both on the Earth's surface and in the ionosphere. Description of these processes and some results of the electric field and current calculations are presented below. The seismic-induced electric field perturbations produce noticeable effects in the ionosphere by generating the electromagnetic field and plasma disturbances. We describe the generation mechanisms of such experimentally observed effects as excitation of plasma density inhomogeneities, field-aligned currents, and ULF/ELF emissions and the modification of electron and ion altitude profiles in the upper ionosphere. The electrodynamic model of the ionosphere modification under the influence of some natural and man-made processes in the atmosphere is also discussed. The model is based on the satellite and ground measurements of electromagnetic field and plasma perturbations and on the data on atmospheric radioactivity and soil gas injection into the atmosphere.

Characterization of perovskite solar cells: Towards a reliable measurement protocol

NASA Astrophysics Data System (ADS)

Zimmermann, Eugen; Wong, Ka Kan; Müller, Michael; Hu, Hao; Ehrenreich, Philipp; Kohlstädt, Markus; Würfel, Uli; Mastroianni, Simone; Mathiazhagan, Gayathri; Hinsch, Andreas; Gujar, Tanaji P.; Thelakkat, Mukundan; Pfadler, Thomas; Schmidt-Mende, Lukas

2016-09-01

Lead halide perovskite solar cells have shown a tremendous rise in power conversion efficiency with reported record efficiencies of over 20% making this material very promising as a low cost alternative to conventional inorganic solar cells. However, due to a differently severe "hysteretic" behaviour during current density-voltage measurements, which strongly depends on scan rate, device and measurement history, preparation method, device architecture, etc., commonly used solar cell measurements do not give reliable or even reproducible results. For the aspect of commercialization and the possibility to compare results of different devices among different laboratories, it is necessary to establish a measurement protocol which gives reproducible results. Therefore, we compare device characteristics derived from standard current density-voltage measurements with stabilized values obtained from an adaptive tracking of the maximum power point and the open circuit voltage as well as characteristics extracted from time resolved current density-voltage measurements. Our results provide insight into the challenges of a correct determination of device performance and propose a measurement protocol for a reliable characterisation which is easy to implement and has been tested on varying perovskite solar cells fabricated in different laboratories.

Laser Direct Routing for High Density Interconnects

NASA Astrophysics Data System (ADS)

Moreno, Wilfrido Alejandro

The laser restructuring of electronic circuits fabricated using standard Very Large Scale Integration (VLSI) process techniques, is an excellent alternative that allows low-cost quick turnaround production with full circuit similarity between the Laser Restructured prototype and the customized product for mass production. Laser Restructurable VLSI (LRVLSI) would allow design engineers the capability to interconnect cells that implement generic logic functions and signal processing schemes to achieve a higher level of design complexity. LRVLSI of a particular circuit at the wafer or packaged chip level is accomplished using an integrated computer controlled laser system to create low electrical resistance links between conductors and to cut conductor lines. An infrastructure for rapid prototyping and quick turnaround using Laser Restructuring of VLSI circuits was developed to meet three main parallel objectives: to pursue research on novel interconnect technologies using LRVLSI, to develop the capability of operating in a quick turnaround mode, and to maintain standardization and compatibility with commercially available equipment for feasible technology transfer. The system is to possess a high degree of flexibility, high data quality, total controllability, full documentation, short downtime, a user-friendly operator interface, automation, historical record keeping, and error indication and logging. A specially designed chip "SLINKY" was used as the test vehicle for the complete characterization of the Laser Restructuring system. With the use of Design of Experiment techniques the Lateral Diffused Link (LDL), developed originally at MIT Lincoln Laboratories, was completely characterized and for the first time a set of optimum process parameters was obtained. With the designed infrastructure fully operational, the priority objective was the search for a substitute for the high resistance, high current leakage to substrate, and relatively low density Lateral Diffused Link. A high density Laser Vertical Link with resistance values below 10 ohms was developed, studied and tested using design of experiment methodologies. The vertical link offers excellent advantages in the area of quick prototyping of electronic circuits, but even more important, due to having similar characteristics to a foundry produced via, it gives quick transfer from the prototype system verification stage to the mass production stage.

Spin Funneling for Enhanced Spin Injection into Ferromagnets

PubMed Central

Sayed, Shehrin; Diep, Vinh Q.; Camsari, Kerem Yunus; Datta, Supriyo

2016-01-01

It is well-established that high spin-orbit coupling (SOC) materials convert a charge current density into a spin current density which can be used to switch a magnet efficiently and there is increasing interest in identifying materials with large spin Hall angle for lower switching current. Using experimentally benchmarked models, we show that composite structures can be designed using existing spin Hall materials such that the effective spin Hall angle is larger by an order of magnitude. The basic idea is to funnel spins from a large area of spin Hall material into a small area of ferromagnet using a normal metal with large spin diffusion length and low resistivity like Cu or Al. We show that this approach is increasingly effective as magnets get smaller. We avoid unwanted charge current shunting by the low resistive NM layer utilizing the newly discovered phenomenon of pure spin conduction in ferromagnetic insulators via magnon diffusion. We provide a spin circuit model for magnon diffusion in FMI that is benchmarked against recent experiments and theory. PMID:27374496

Spin Funneling for Enhanced Spin Injection into Ferromagnets

NASA Astrophysics Data System (ADS)

Sayed, Shehrin; Diep, Vinh Q.; Camsari, Kerem Yunus; Datta, Supriyo

2016-07-01

It is well-established that high spin-orbit coupling (SOC) materials convert a charge current density into a spin current density which can be used to switch a magnet efficiently and there is increasing interest in identifying materials with large spin Hall angle for lower switching current. Using experimentally benchmarked models, we show that composite structures can be designed using existing spin Hall materials such that the effective spin Hall angle is larger by an order of magnitude. The basic idea is to funnel spins from a large area of spin Hall material into a small area of ferromagnet using a normal metal with large spin diffusion length and low resistivity like Cu or Al. We show that this approach is increasingly effective as magnets get smaller. We avoid unwanted charge current shunting by the low resistive NM layer utilizing the newly discovered phenomenon of pure spin conduction in ferromagnetic insulators via magnon diffusion. We provide a spin circuit model for magnon diffusion in FMI that is benchmarked against recent experiments and theory.

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact

PubMed Central

2015-01-01

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm2 and a high power conversion efficiency of 19.2%. PMID:25679010

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact.

PubMed

Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; Chen, Kevin; Hettick, Mark; Zheng, Maxwell; Chen, Cheng-Ying; Kiriya, Daisuke; Javey, Ali

2014-12-17

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO 2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency of 19.2%.

Gate drive latching circuit for an auxiliary resonant commutation circuit

NASA Technical Reports Server (NTRS)

Delgado, Eladio Clemente (Inventor); Kheraluwala, Mustansir Hussainy (Inventor)

1999-01-01

A gate drive latching circuit for an auxiliary resonant commutation circuit for a power switching inverter includes a current monitor circuit providing a current signal to a pair of analog comparators to implement latching of one of a pair of auxiliary switching devices which are used to provide commutation current for commutating switching inverters in the circuit. Each of the pair of comparators feeds a latching circuit which responds to an active one of the comparators for latching the associated gate drive circuit for one of the pair of auxiliary commutating switches. An initial firing signal is applied to each of the commutating switches to gate each into conduction and the resulting current is monitored to determine current direction and therefore the one of the switches which is carrying current. The comparator provides a latching signal to the one of the auxiliary power switches which is actually conducting current and latches that particular power switch into an on state for the duration of current through the device. The latching circuit is so designed that the only time one of the auxiliary switching devices can be latched on is during the duration of an initial firing command signal.

Nano-engineered Multiwall Carbon Nanotube-copper Composite Thermal Interface Material for Efficient Heat Conduction

NASA Technical Reports Server (NTRS)

Ngo, Quoc; Cruden, Brett A.; Cassell, Alan M.; Sims, Gerard; Li, Jun; Meyyappa, M.; Yang, Cary Y.

2005-01-01

Efforts in integrated circuit (IC) packaging technologies have recently been focused on management of increasing heat density associated with high frequency and high density circuit designs. While current flip-chip package designs can accommodate relatively high amounts of heat density, new materials need to be developed to manage thermal effects of next-generation integrated circuits. Multiwall carbon nanotubes (MWNT) have been shown to significantly enhance thermal conduction in the axial direction and thus can be considered to be a candidate for future thermal interface materials by facilitating efficient thermal transport. This work focuses on fabrication and characterization of a robust MWNT-copper composite material as an element in IC package designs. We show that using vertically aligned MWNT arrays reduces interfacial thermal resistance by increasing conduction surface area, and furthermore, the embedded copper acts as a lateral heat spreader to efficiently disperse heat, a necessary function for packaging materials. In addition, we demonstrate reusability of the material, and the absence of residue on the contacting material, both novel features of the MWNT-copper composite that are not found in most state-of-the-art thermal interface materials. Electrochemical methods such as metal deposition and etch are discussed for the creation of the MWNT-Cu composite, detailing issues and observations with using such methods. We show that precise engineering of the composite surface affects the ability of this material to act as an efficient thermal interface material. A thermal contact resistance measurement has been designed to obtain a value of thermal contact resistance for a variety of different thermal contact materials.

30 CFR 77.900 - Low- and medium-voltage circuits serving portable or mobile three-phase alternating current...

Code of Federal Regulations, 2011 CFR

2011-07-01

... portable or mobile three-phase alternating current equipment; circuit breakers. 77.900 Section 77.900... mobile three-phase alternating current equipment; circuit breakers. Low- and medium-voltage circuits supplying power to portable or mobile three-phase alternating current equipment shall be protected by...

Origin of Reduced Open-Circuit Voltage in Highly Efficient Small-Molecule-Based Solar Cells upon Solvent Vapor Annealing.

PubMed

Deng, Wanyuan; Gao, Ke; Yan, Jun; Liang, Quanbin; Xie, Yuan; He, Zhicai; Wu, Hongbin; Peng, Xiaobin; Cao, Yong

2018-03-07

In this study, we demonstrate that remarkably reduced open-circuit voltage in highly efficient organic solar cells (OSCs) from a blend of phenyl-C 61 -butyric acid methyl ester and a recently developed conjugated small molecule (DPPEZnP-THD) upon solvent vapor annealing (SVA) is due to two independent sources: increased radiative recombination and increased nonradiative recombination. Through the measurements of electroluminescence due to the emission of the charge-transfer state and photovoltaic external quantum efficiency measurement, we can quantify that the open-circuit voltage losses in a device with SVA due to the radiative recombination and nonradiative recombination are 0.23 and 0.31 V, respectively, which are 0.04 and 0.07 V higher than those of the as-cast device. Despite of the reduced open-circuit voltage, the device with SVA exhibited enhanced dissociation of charge-transfer excitons, leading to an improved short-circuit current density and a remarkable power conversion efficiency (PCE) of 9.41%, one of the best for solution-processed OSCs based on small-molecule donor materials. Our study also clearly shows that removing the nonradiative recombination pathways and/or suppressing energetic disorder in the active layer would result in more long-lived charge carriers and enhanced open-circuit voltage, which are prerequisites for further improving the PCE.

Stability of amorphous silicon thin film transistors and circuits

NASA Astrophysics Data System (ADS)

Liu, Ting

Hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) have been widely used for the active-matrix addressing of flat panel displays, optical scanners and sensors. Extending the application of the a-Si TFTs from switches to current sources, which requires continuous operation such as for active-matrix organic light-emitting-diode (AMOLED) pixels, makes stability a critical issue. This thesis first presents a two-stage model for the stability characterization and reliable lifetime prediction for highly stable a-Si TFTs under low gate-field stress. Two stages of the threshold voltage shift are identified from the decrease of the drain saturation current under low-gate field. The first initial stage dominates up to hours or days near room temperature. It can be characterized with a stretched-exponential model, with the underlying physical mechanism of charge trapping in the gate dielectric. The second stage dominates in the long term and then saturates. It corresponds to the breaking of weak bonds in the amorphous silicon. It can be modeled with a "unified stretched exponential fit," in which a thermalization energy is used to unify experimental measurements of drain current decay at different temperatures into a single curve. Two groups of experiments were conducted to reduce the drain current instability of a-Si TFTs under prolonged gate bias. Deposition conditions for the silicon nitride (SiNx) gate insulator and the a-Si channel layer were varied, and TFTs were fabricated with all reactive ion etching steps, or with all wet etching steps, the latter in a new process. The two-stage model that unites charge trapping in the SiNx gate dielectric and defect generation in the a-Si channel was used to interpret the experimental results. We identified the optimal substrate temperature, gas flow ratios, and RF deposition power densities. The stability of the a-Si channel depends also on the deposition conditions for the underlying SiNx gate insulator. TFTs made with wet etching are more stable than TFTs made with reactive ion etching. Combining the various improvements raised the extrapolated 50% decay time of the drain current of back channel passivated dry-etched TFTs under continuous operation at 20°C from 3.3 x 104 sec (9.2 hours) to 4.4 x 107 sec (1.4 years). The 50% lifetime can be further improved by ˜2 times through wet etching process. Two assumptions in the two-stage model were revisited. First, the distribution of the gap state density in a-Si was obtained with the field-effect technique. The redistribution of the gap state density after low-gate field stress supports the idea that defect creation in a-Si dominates in the long term. Second, the drain-bias dependence of drain current degradation was measured and modeled. The unified stretched exponential was validated for a-Si TFTs operating in saturation. Finally, a new 3-TFT voltage-programmed pixel circuit with an in-pixel current source is presented. This circuit is largely insensitive to the TFT threshold voltage shift. The fabricated pixel circuit provides organic light-emitting diode (OLED) currents ranging from 25 nA to 2.9 microA, an on/off ratio of 116 at typical quarter graphics display resolution (QVGA) display timing. The overall conclusion of this thesis research is that the operating life of a-Si TFTs can be quite long, and that these transistors can expect to find yet more applications in large area electronics.

Another Nulling Hall-Effect Current-Measuring Circuit

NASA Technical Reports Server (NTRS)

Thibodeau, Phillip E.; Sullender, Craig C.

1993-01-01

Lightweight, low-power circuit provides noncontact measurement of alternating or direct current of many ampheres in main conductor. Advantages of circuit over other nulling Hall-effect current-measuring circuits is stability and accuracy increased by putting both analog-to-digital and digital-to-analog converters in nulling feedback loop. Converters and rest of circuit designed for operation at sampling rate of 100 kHz, but rate changed to alter time or frequency response of circuit.

An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Y. T., E-mail: yasun@kth.se; Omanakuttan, G.; Lourdudoss, S.

2015-05-25

An n-InP/p-Si heterojunction photodiode fabricated by corrugated epitaxial lateral overgrowth (CELOG) method is presented. N-InP/p-Si heterojunction has been achieved from a suitable pattern containing circular shaped openings in a triangular lattice on the InP seed layer on p-Si substrate and subsequent CELOG of completely coalesced n-InP. To avoid current path through the seed layer in the final photodiode, semi-insulating InP:Fe was grown with adequate thickness prior to n-InP growth in a low pressure hydride vapor phase epitaxy reactor. The n-InP/p-Si heterointerface was analyzed by scanning electron microscopy and Raman spectroscopy. Room temperature cross-sectional photoluminescence (PL) mapping illustrates the defect reductionmore » effect in InP grown on Si by CELOG method. The InP PL intensity measured above the InP/Si heterojunction is comparable to that of InP grown on a native planar substrate indicating low interface defect density of CELOG InP despite of 8% lattice mismatch with Si. The processed n-InP/p-Si heterojunction photodiodes show diode characteristics from the current-voltage (I-V) measurements with a dark current density of 0.324 mA/cm{sup 2} at a reverse voltage of −1 V. Under the illumination of AM1.5 conditions, the InP/Si heterojunction photodiode exhibited photovoltaic effect with an open circuit voltage of 180 mV, a short circuit current density of 1.89 mA/cm{sup 2}, an external quantum efficiency of 4.3%, and an internal quantum efficiency of 6.4%. This demonstration of epitaxially grown InP/Si heterojunction photodiode will open the door for low cost and high efficiency solar cells and photonic integration of III-Vs on silicon.« less

Device physics of hydrogenated amorphous silicon solar cells

NASA Astrophysics Data System (ADS)

Liang, Jianjun

This dissertation reports measurements on and modeling of hydrogenated amorphous silicon (a-Si:H) nip solar cells. Cells with thicknesses from 200-900 nm were prepared at United Solar Ovonic LLC. The current density-voltage (J-V) relations were measured under laser illumination (685 nm wavelength, up to 200 mW/cm2) over the temperature range 240 K--350 K. The changes in the cells' open-circuit voltage during extended laser illumination (light-soaking) were measured, as were the cell properties in several light-soaked states. The J-V properties of cells in their as-deposited and light-soaked states converge at low-temperatures. Electromodulation spectra for the cells were also measured over the range 240 K--350 K to determine the temperature-dependent bandgap. These experimental results were compared to computer calculations of J-V relations using the AMPS ((c)Pennsylvania State University) computer code. Bandtail parameters (for electron and hole mobility and recombination) were consistent with published drift-mobility and transient photocurrent measurements on a-Si:H. The open-circuit voltage and power density measurements on as-deposited cells, as a function of temperature and thickness, were predicted well. The calculations support a general "hole mobility limited" approach to analyzing a-Si:H solar cells, and indicate that the doped electrode layers, the as-deposited density of dangling bonds, and the electron mobility are of secondary importance to as-deposited cells. For light-soaked a-Si:H solar cells, incorporation of a density of dangling bonds in the computer calculations accounted satisfactorily for the power and open-circuit voltage measurements, including the low-temperature convergence effect. The calculations indicate that, in the light-soaked state at room-temperature, electron recombination is split nearly evenly between holes trapped in the valence bandtail and holes trapped on dangling bonds. The result supports Stutzmann, Jackson, and Tsai's 1985 conjecture that dangling bond creation results only from bandtail recombination events. We compared the predictions of the hydrogen-collision model proposed by Branz with the kinetics of the open-circuit voltage as light-soaking progressed. We obtained satisfactory agreement for the initial phases of light-soaking with the conjecture that only bandtail recombination leads to dangling bond creation, and the computer calculations for this recombination channel's diminishment in the cell as the dangling bond density grows.

Novel back-reflector architecture with nanoparticle based buried light-scattering microstructures for improved solar cell performance

NASA Astrophysics Data System (ADS)

Desta, Derese; Ram, Sanjay K.; Rizzoli, Rita; Bellettato, Michele; Summonte, Caterina; Jeppesen, Bjarke R.; Jensen, Pia B.; Tsao, Yao-Chung; Wiggers, Hartmut; Pereira, Rui N.; Balling, Peter; Larsen, Arne Nylandsted

2016-06-01

A new back-reflector architecture for light-management in thin-film solar cells is proposed that includes a morphologically smooth top surface with light-scattering microstructures buried within. The microstructures are pyramid shaped, fabricated on a planar reflector using TiO2 nanoparticles and subsequently covered with a layer of Si nanoparticles to obtain a flattened top surface, thus enabling growth of good quality thin-film solar cells. The optical properties of this back-reflector show high broadband haze parameter and wide angular distribution of diffuse light-scattering. The n-i-p amorphous silicon thin-film solar cells grown on such a back-reflector show enhanced light absorption resulting in improved external quantum efficiency. The benefit of the light trapping in those solar cells is evidenced by the gains in short-circuit current density and efficiency up to 15.6% and 19.3% respectively, compared to the reference flat solar cells. This improvement in the current generation in the solar cells grown on the flat-topped (buried pyramid) back-reflector is observed even when the irradiation takes place at large oblique angles of incidence. Finite-difference-time-domain simulation results of optical absorption and ideal short-circuit current density values agree well with the experimental findings. The proposed approach uses a low cost and simple fabrication technique and allows effective light manipulation by utilizing the optical properties of micro-scale structures and nanoscale constituent particles.

Frequency and voltage dependent electrical responses of poly(triarylamine) thin film-based organic Schottky diode

NASA Astrophysics Data System (ADS)

Anuar Mohamad, Khairul; Tak Hoh, Hang; Alias, Afishah; Ghosh, Bablu Kumar; Fukuda, Hisashi

2017-11-01

A metal-organic-metal (MOM) type Schottky diode based on poly (triarylamine) (PTAA) thin films has been fabricated by using the spin coating method. Investigation of the frequency dependent conductance-voltage (G-V-f) and capacitance-voltage (C-V-f) characteristics of the ITO/PTAA/Al MOM type diode were carried out in the frequency range from 12 Hz to 100 kHz using an LCR meter at room temperature. The frequency and bias voltage dependent electrical response were determined by admittance-based measured method in terms of an equivalent circuit model of the parallel combination of resistance and capacitance (RC circuit). Investigation revealed that the conductance is frequency and a bias voltage dependent in which conductance continuous increase as the increasing frequency, respectively. Meanwhile, the capacitance is dependent on frequency up to a certain value of frequency (100 Hz) but decreases at high frequency (1 - 10 kHz). The interface state density in the Schottky diode was determined from G-V and C-V characteristics. The interface state density has values almost constant of 2.8 x 1012 eV-1cm-2 with slightly decrease by increasing frequencies. Consequently, both series resistance and interface trap density were found to decrease with increasing frequency. The frequency dependence of the electrical responses is attributed the distribution density of interface states that could follow the alternating current (AC) signal.

A statistical-based material and process guidelines for design of carbon nanotube field-effect transistors in gigascale integrated circuits.

PubMed

Ghavami, Behnam; Raji, Mohsen; Pedram, Hossein

2011-08-26

Carbon nanotube field-effect transistors (CNFETs) show great promise as building blocks of future integrated circuits. However, synthesizing single-walled carbon nanotubes (CNTs) with accurate chirality and exact positioning control has been widely acknowledged as an exceedingly complex task. Indeed, density and chirality variations in CNT growth can compromise the reliability of CNFET-based circuits. In this paper, we present a novel statistical compact model to estimate the failure probability of CNFETs to provide some material and process guidelines for the design of CNFETs in gigascale integrated circuits. We use measured CNT spacing distributions within the framework of detailed failure analysis to demonstrate that both the CNT density and the ratio of metallic to semiconducting CNTs play dominant roles in defining the failure probability of CNFETs. Besides, it is argued that the large-scale integration of these devices within an integrated circuit will be feasible only if a specific range of CNT density with an acceptable ratio of semiconducting to metallic CNTs can be adjusted in a typical synthesis process.

Magnetically Controlled Variable Transformer

NASA Technical Reports Server (NTRS)

Kleiner, Charles T.

1994-01-01

Improved variable-transformer circuit, output voltage and current of which controlled by use of relatively small current supplied at relatively low power to control windings on its magnetic cores. Transformer circuits of this type called "magnetic amplifiers" because ratio between controlled output power and power driving control current of such circuit large. This ratio - power gain - can be as large as 100 in present circuit. Variable-transformer circuit offers advantages of efficiency, safety, and controllability over some prior variable-transformer circuits.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reed, David M.; Thomsen, Edwin C.; Wang, Wei

Three Nafion membranes of similar composition but different thicknesses were operated in a 3-cell 1kW class all vanadium mixed acid redox flow battery. The influence of current density on the charge/discharge characteristics, coulombic and energy efficiency, capacity fade, operating temperature and pressure drop in the flow circuit will be discussed and correlated to the Nafion membrane thickness. Material costs associated with the Nafion membranes, ease of handling the membranes, and performance impacts will also be discussed.

Internal Charging

NASA Technical Reports Server (NTRS)

Minow, Joseph I.

2014-01-01

(1) High energy (>100keV) electrons penetrate spacecraft walls and accumulate in dielectrics or isolated conductors; (2) Threat environment is energetic electrons with sufficient flux to charge circuit boards, cable insulation, and ungrounded metal faster than charge can dissipate; (3) Accumulating charge density generates electric fields in excess of material breakdown strenght resulting in electrostatic discharge; and (4) System impact is material damage, discharge currents inside of spacecraft Faraday cage on or near critical circuitry, and RF noise.

TCAD Analysis of Heating and Maximum Current Density in Carbon Nanofiber Interconnects

DTIC Science & Technology

2011-09-01

a metallic MWCNT interconnect. From [20]. ....20  Figure 11.  Simple equivalent circuit model of a metallic MWCNT interconnect. From [20...Carbon Nanotube MWCNT Multi-Walled Carbon Nanotube SCU Santa Clara University Si Silicon SiO2 Silicon Dioxide SiC Silicon Carbide Au Gold...proven, multi-walled carbon nanotube ( MWCNT ) [2]. He later discovered single-walled carbon nanotubes (SWCNT) in 1993 [13]. Since Iijima’s discovery

49 CFR 234.213 - Grounds.

Code of Federal Regulations, 2014 CFR

2014-10-01

...: circuits that include track rail; alternating current power distribution circuits that are grounded in the...) Circuits that include track rail; (2) Alternating current power distribution circuits that are grounded in...

A wireless transmission system powered by an enzyme biofuel cell implanted in an orange.

PubMed

MacVittie, Kevin; Conlon, Tyler; Katz, Evgeny

2015-12-01

A biofuel cell composed of catalytic electrodes made of "buckypaper" modified with PQQ-dependent glucose dehydrogenase and FAD-dependent fructose dehydrogenase on the anode and with laccase on the cathode was used to activate a wireless information transmission system. The cathode/anode pair was implanted in orange pulp extracting power from its content (glucose and fructose in the juice). The open circuit voltage, Voc, short circuit current density, jsc, and maximum power produced by the biofuel cell, Pmax, were found as ca. 0.6 V, ca. 0.33 mA·cm(-2) and 670 μW, respectively. The voltage produced by the biofuel cell was amplified with an energy harvesting circuit and applied to a wireless transmitter. The present study continues the research line where different implantable biofuel cells are used for the activation of electronic devices. The study emphasizes the biosensor and environmental monitoring applications of implantable biofuel cells harvesting power from natural sources, rather than their biomedical use. Copyright © 2014 Elsevier B.V. All rights reserved.

Nulling Hall-Effect Current-Measuring Circuit

NASA Technical Reports Server (NTRS)

Sullender, Craig C.; Vazquez, Juan M.; Berru, Robert I.

1993-01-01

Circuit measures electrical current via combination of Hall-effect-sensing and magnetic-field-nulling techniques. Known current generated by feedback circuit adjusted until it causes cancellation or near cancellation of magnetic field produced in toroidal ferrite core by current measured. Remaining magnetic field measured by Hall-effect sensor. Circuit puts out analog signal and digital signal proportional to current measured. Accuracy of measurement does not depend on linearity of sensing components.

Niobium flex cable for low temperature high density interconnects

NASA Astrophysics Data System (ADS)

van Weers, H. J.; Kunkel, G.; Lindeman, M. A.; Leeman, M.

2013-05-01

This work describes the fabrication and characterization of a Niobium on polyimide flex cable suitable for sub-Kelvin temperatures. The processing used can be extended to high density interconnects and allows for direct integration with printed circuit boards. Several key parameters such as RRR, Tc, current carrying capability at 4 K and thermal conductivity in the range from 0.15 to 10 K have been measured. The average Tc was found to be 8.9 K, with a minimum of 8.3 K. Several samples allowed for more than 50 mA current at 4 K while remaining in the superconducting state. The thermal conductivity for this flex design is dominated by the polyimide, in our case Pyralin PI-2611, and is in good agreement with published thermal conductivity data for a polyimide called Upilex R. Registered trademark of Ube Industries, Japan.

The TELEC - A plasma type of direct energy converter. [Thermo-Electronic Laser Energy Converter for electric power generation

NASA Technical Reports Server (NTRS)

Britt, E. J.

1978-01-01

The Thermo-Electronic Laser Energy Converter (TELEC) is a high-power density plasma device designed to convert a 10.6-micron CO2 laser beam into electric power. Electromagnetic radiation is absorbed in plasma electrons, creating a high-electron temperature. Energetic electrons diffuse from the plasma and strike two electrodes having different areas. The larger electrode collects more electrons and there is a net transport of current. An electromagnetic field is generated in the external circuit. A computer program has been designed to analyze TELEC performance allowing parametric variation for optimization. Values are presented for TELEC performance as a function of cesium pressure and for current density and efficiency as a function of output voltage. Efficiency is shown to increase with pressure, reaching a maximum over 45%.

Monolithic Parallel Tandem Organic Photovoltaic Cell with Transparent Carbon Nanotube Interlayer

NASA Technical Reports Server (NTRS)

Tanaka, S.; Mielczarek, K.; Ovalle-Robles, R.; Wang, B.; Hsu, D.; Zakhidov, A. A.

2009-01-01

We demonstrate an organic photovoltaic cell with a monolithic tandem structure in parallel connection. Transparent multiwalled carbon nanotube sheets are used as an interlayer anode electrode for this parallel tandem. The characteristics of front and back cells are measured independently. The short circuit current density of the parallel tandem cell is larger than the currents of each individual cell. The wavelength dependence of photocurrent for the parallel tandem cell shows the superposition spectrum of the two spectral sensitivities of the front and back cells. The monolithic three-electrode photovoltaic cell indeed operates as a parallel tandem with improved efficiency.

Light intensity dependence of open-circuit voltage and short-circuit current of polymer/fullerene solar cells

NASA Astrophysics Data System (ADS)

Koster, L. Jan A.; Mihailetchi, Valentin D.; Ramaker, Robert; Xie, Hangxing; Blom, Paul W. M.

2006-04-01

The open-circuit voltage (Voc) of polymer/fullerene bulk heterojunction solar cells is investigated as a function of light intensity for different temperatures. The observed photogenerated current and V oc are at variance with classical p-n junctionbased models. The influence of light intensity and recombination strength on V oc is consistently explained by a model based on the notion that the quasi-Fermi levels are constant throughout the device, including both drift and diffusion of charge carriers. The light intensity dependence of the short-circuit current density (J sc) is also addressed. A typical feature of polymer/fullerene based solar cells is that Jsc does not scale exactly linearly with light intensity (I). Instead, a power law relationship is found given by Jsc~ Iα, where α ranges from 0.9 to 1. In a number of reports this deviation from unity is attributed to the occurrence of bimolecular recombination. We demonstrate that the dependence of the photocurrent in bulk heterojunction solar cells is governed by the build-up of space charge in the device. The occurrence of space-charge stems from the difference in charge carrier mobility of electrons and holes. In blends of poly(3-hexylthiophene) and 6,6- phenyl C61-butyric acid methyl ester this mobility difference can be tuned in between one and three orders of magnitude, depending on the annealing conditions. This allows us to experimentally verify the relation between space charge build-up and intensity dependence of Jsc. Model calculations confirm that bimolecular recombination leads only to a typical loss of 1% of all free charge carriers at Jsc for these devices. Therefore, bimolecular recombination plays only a minor role as compared to the effect of space charge in the intensity dependence of J sc.

Influence of supporting electrolyte in electricity generation and degradation of organic pollutants in photocatalytic fuel cell.

PubMed

Khalik, Wan Fadhilah; Ong, Soon-An; Ho, Li-Ngee; Wong, Yee-Shian; Voon, Chun-Hong; Yusuf, Sara Yasina; Yusoff, Nik Athirah; Lee, Sin-Li

2016-08-01

This study investigated the effect of different supporting electrolyte (Na2SO4, MgSO4, NaCl) in degradation of Reactive Black 5 (RB5) and generation of electricity. Zinc oxide (ZnO) was immobilized onto carbon felt acted as photoanode, while Pt-coated carbon paper as photocathode was placed in a single chamber photocatalytic fuel cell, which then irradiated by UV lamp for 24 h. The degradation and mineralization of RB5 with 0.1 M NaCl rapidly decreased after 24-h irradiation time, followed by MgSO4, Na2SO4 and without electrolyte. The voltage outputs for Na2SO4, MgSO4 and NaCl were 908, 628 and 523 mV, respectively, after 24-h irradiation time; meanwhile, their short-circuit current density, J SC, was 1.3, 1.2 and 1.05 mA cm(-2), respectively. The power densities for Na2SO4, MgSO4 and NaCl were 0.335, 0.256 and 0.245 mW cm(-2), respectively. On the other hand, for without supporting electrolyte, the voltage output and short-circuit current density was 271.6 mV and 0.055 mA cm(-2), respectively. The supporting electrolyte NaCl showed greater performance in degradation of RB5 and generation of electricity due to the formation of superoxide radical anions which enhance the degradation of dye. The mineralization of RB5 with different supporting electrolyte was measured through spectrum analysis and reduction in COD concentration.

Short-circuit current and ionic fluxes in the isolated colonic mucosa of Bufo arenarum.

PubMed

Lew, V L

1970-03-01

1. The unidirectional fluxes of (22)Na, (36)Cl and [(14)C]bicarbonate ions were measured in paired portions of the isolated and short-circuited colonic mucosa of Bufo arenarum, separated from its muscular layer. Pharmacological effects as well as effects of changes in the composition of the nutrient solutions on the electrical parameters of membrane activity (potential difference, short-circuit current and total membrane resistance) are described.2. The net fluxes of both Cl and bicarbonate ions were not significantly different from zero in the absence of electrochemical gradients across the membrane.3. The net Na flux from mucosa to serosa represented a variable proportion of the short-circuit current ranging from 62 to 100%.4. The proportion of membranes with high discrepancies between net Na flux and short-circuit current decreased with the duration of captivity of the toads.5. When Na was entirely replaced by choline in the mucosal bathing solution, the short-circuit current dropped by a variable amount within the range of 64 to 98% of its control values in different membranes. This effect was completely reversible. Similar changes in the serosal solution had no effect.6. The short-circuit current and potential difference were very sensitive to the serosal concentration of bicarbonate ions. In different membranes, 60-100% of the short-circuit current was reversibly abolished by bathing the serosal surface with a bicarbonate-free solution. The mucosal bicarbonate level had no effect on either the potential difference or the short-circuit current. 5 mM bicarbonate in the serosal solution restored at least 50% of the short-circuit control value and full recovery was attained by concentrations near 30 mM bicarbonate.7. Anoxia brought the potential difference and short-circuit current reversibly down to zero in about 50 min.8. Ouabain reduced the short-circuit current up to 80% in about 40 min when present in the serosal solution at a concentration of 10(-4)M. At this or lower concentrations the ouabain effect was reversible. Above this level ouabain produced 100% inhibition in 3-4 hr, but this was no longer reversible. Ouabain had no effect on the short-circuit current either when applied to the mucosal surface or in the absence of Na from the mucosal solution.9. Diamox produced a variable inhibition of the short-circuit current of up to 30% only at concentrations above 10 mM.10. Possible mechanisms are discussed for the appearance of the non-Na component of the short-circuit current. A theory concerning its nature is proposed.

Graphene Ink Laminate Structures on Poly(vinylidene difluoride) (PVDF) for Pyroelectric Thermal Energy Harvesting and Waste Heat Recovery.

PubMed

Zabek, Daniel; Seunarine, Kris; Spacie, Chris; Bowen, Chris

2017-03-15

Thermal energy can be effectively converted into electricity using pyroelectrics, which act as small scale power generator and energy harvesters providing nanowatts to milliwatts of electrical power. In this paper, a novel pyroelectric harvester based on free-standing poly(vinylidene difluoride) (PVDF) was manufactured that exploits the high thermal radiation absorbance of a screen printed graphene ink electrode structure to facilitate the conversion of the available thermal radiation energy into electrical energy. The use of interconnected graphene nanoplatelets (GNPs) as an electrode enable high thermal radiation absorbance and high electrical conductivity along with the ease of deposition using a screen print technique. For the asymmetric structure, the pyroelectric open-circuit voltage and closed-circuit current were measured, and the harvested electrical energy was stored in an external capacitor. For the graphene ink/PVDF/aluminum system the closed circuit pyroelectric current improves by 7.5 times, the open circuit voltage by 3.4 times, and the harvested energy by 25 times compared to a standard aluminum/PVDF/aluminum system electrode design, with a peak energy density of 1.13 μJ/cm 3 . For the pyroelectric device employed in this work, a complete manufacturing process and device characterization of these structures are reported along with the thermal conductivity of the graphene ink. The material combination presented here provides a new approach for delivering smart materials and structures, wireless technologies, and Internet of Things (IoT) devices.

Focal plane infrared readout circuit with automatic background suppression

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Yang, Guang (Inventor); Sun, Chao (Inventor); Shaw, Timothy J. (Inventor); Wrigley, Chris J. (Inventor)

2002-01-01

A circuit for reading out a signal from an infrared detector includes a current-mode background-signal subtracting circuit having a current memory which can be enabled to sample and store a dark level signal from the infrared detector during a calibration phase. The signal stored by the current memory is subtracted from a signal received from the infrared detector during an imaging phase. The circuit also includes a buffered direct injection input circuit and a differential voltage readout section. By performing most of the background signal estimation and subtraction in a current mode, a low gain can be provided by the buffered direct injection input circuit to keep the gain of the background signal relatively small, while a higher gain is provided by the differential voltage readout circuit. An array of such readout circuits can be used in an imager having an array of infrared detectors. The readout circuits can provide a high effective handling capacity.

Research on influence of parasitic resistance of InGaAs solar cells under continuous wave laser irradiation

NASA Astrophysics Data System (ADS)

Li, Guangji; Zhang, Hongchao; Zhou, Guanglong; Lu, Jian; Zhou, Dayong

2017-06-01

InGaAs solar cells were irradiated by 1060-1080nm continuous wave (CW) laser, and studied the laser-electrical conversion and damage experiment with the power density as 97mW/cm2 and 507W/cm2 respectively. The result indicated that there is no obvious damage phenomenon but air layer appeared in the damaged region, and there is no direct relationship between the area and the extent of damage. Moreover, the p-n junction in the damage zone was destroyed, lost the ability of photoelectric conversion. The region acts as a resistance between the two electrodes, resulting in an increase in the leakage current of the solar cells and a decrease in the parallel resistance, which is the main reason leading to the decline of open circuit voltage, short circuit current and conversion efficiency. This paper would provide a reference for wireless energy transmission and the subsequent laser damage of solar cells.

Small-Molecule Solar Cells with Simultaneously Enhanced Short-Circuit Current and Fill Factor to Achieve 11% Efficiency.

PubMed

Nian, Li; Gao, Ke; Jiang, Yufeng; Rong, Qikun; Hu, Xiaowen; Yuan, Dong; Liu, Feng; Peng, Xiaobin; Russell, Thomas P; Zhou, Guofu

2017-08-01

High-efficiency small-molecule-based organic photovoltaics (SM-OPVs) using two electron donors (p-DTS(FBTTh 2 ) 2 and ZnP) with distinctively different absorption and structural features are reported. Such a combination works well and synergically improves device short-circuit current density (J sc ) to 17.99 mA cm -2 and fill factor (FF) to 77.19%, yielding a milestone efficiency of 11%. To the best of our knowledge, this is the highest power conversion efficiency reported for SM-OPVs to date and the first time to combine high J sc over 17 mA cm -2 and high FF over 77% into one SM-OPV. The strategy of using multicomponent materials, with a selecting role of balancing varied electronic and structural necessities can be an important route to further developing higher performance devices. This development is important, which broadens the dimension and versatility of existing materials without much chemistry input. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication of p-type CuO thin films using chemical bath deposition technique and their solar cell applications with Si nanowires

NASA Astrophysics Data System (ADS)

Akgul, Funda Aksoy; Akgul, Guvenc

2017-02-01

Recently, CuO has attracted much interest owing to its suitable material properties, inexpensive fabrication cost and potential applications for optoelectronic devices. In this study, CuO thin films were deposited on glass substrates using chemical bath deposition technique and post-deposition annealing effect on the properties of the prepared samples were investigated. p-n heterojunction solar cells were then constructed by coating of p-type CuO films onto the vertically well-aligned n-type Si nanowires synthesized through MACE method. Photovoltaic performance of the fabricated devices were determined with current-voltage (I-V) measurements under AM 1.5 G illumination. The optimal short-circuit current density, open-circuit voltage, fill factor and power conversion efficiency were found to be 3.2 mA/cm-2, 337 mV, 37.9 and 0.45%, respectively. The observed performance clearly indicates that the investigated device structure could be a promising candidate for high-performance low-cost new-generation photovoltaic diodes.

18.4%-Efficient Heterojunction Si Solar Cells Using Optimized ITO/Top Electrode.

PubMed

Kim, Namwoo; Um, Han-Don; Choi, Inwoo; Kim, Ka-Hyun; Seo, Kwanyong

2016-05-11

We optimize the thickness of a transparent conducting oxide (TCO) layer, and apply a microscale mesh-pattern metal electrode for high-efficiency a-Si/c-Si heterojunction solar cells. A solar cell equipped with the proposed microgrid metal electrode demonstrates a high short-circuit current density (JSC) of 40.1 mA/cm(2), and achieves a high efficiency of 18.4% with an open-circuit voltage (VOC) of 618 mV and a fill factor (FF) of 74.1% as result of the shortened carrier path length and the decreased electrode area of the microgrid metal electrode. Furthermore, by optimizing the process sequence for electrode formation, we are able to effectively restore the reduction in VOC that occurs during the microgrid metal electrode formation process. This work is expected to become a fundamental study that can effectively improve current loss in a-Si/c-Si heterojunction solar cells through the optimization of transparent and metal electrodes.

An enhanced mangiferaindica for dye sensitized solar cell application

NASA Astrophysics Data System (ADS)

Uno, U. E.; Emetere, M. E.; Fadipe, L. A.; Oluranti, Jonathan

2016-02-01

Titanium dioxide (T1O2) is preferred to Zinc oxide as mesoporous oxide layer because it raised the efficiency of DSSCs from 1% to 7%. The chemistry of the process however seem rigorous to allow the light induced electron injection from the adsorbed dye into the nanocrystallites i.e. which renders the TiO2 conductive. The DSSC fabricated consist of 2.25 cm2 active area of titanium dioxide coated on FTO glass (fluorine tin oxide) immersed in ethanol solution of natural dye extracted as an anode (electrode) and counter electrode. These two electrodes were coupled together and the space between them was filled with the Iodolyte AN-50 as solid electrolyte or redox mediator. The photo electrochemical parameters of the dye extracted (Mango fruit Peel) from the results obtained are short circuit current (Isc)= 1.22×10-2, current density (Jsc)=4.07×10-2, open circuit voltage (voc) =0.53V, fill factor (FF) of 0.16 and the overall conversion efficiency (Eff) =0.345%.

Superconducting dc Current Limiting Vacuum Circuit Breaker

NASA Astrophysics Data System (ADS)

Alferov, D. F.; Akhmetgareev, M. R.; Budovskii, A. I.; Bunin, R. A.; Voloshin, I. F.; Degtyarenko, P. N.; Yevsin, D. V.; Ivanov, V. P.; Sidorov, V. A.; Fisher, L. M.; Tshai, E. V.

Acircuitofadc superconductingfault current limiter witha direct current circuit-breaker fora nominal current 300A is proposed. It includes the 2G high temperature superconducting (HTS) tapes and the high-speed dc vacuum circuit breaker.Thetestresultsof current-limitingcapacityandrecoverytimeof superconductivityafter currentfaultatvoltage upto3 kV are presented.

Biobatteries and biofuel cells with biphenylated carbon nanotubes

NASA Astrophysics Data System (ADS)

Stolarczyk, Krzysztof; Kizling, Michał; Majdecka, Dominika; Żelechowska, Kamila; Biernat, Jan F.; Rogalski, Jerzy; Bilewicz, Renata

2014-03-01

Single-walled carbon nanotubes (SWCNTs) covalently biphenylated are used for the construction of cathodes in a flow biobattery and in flow biofuel cell. Zinc covered with a hopeite layer is the anode in the biobattery and glassy carbon electrode covered with bioconjugates of single-walled carbon nanotubes with glucose oxidase and catalase is the anode of the biofuel cell. The potentials of the electrodes are measured vs. the Ag/AgCl reference electrode under changing loads of the fuel cell/biobattery. The power density of the biobattery with biphenylated nanotubes at the cathode is ca. 0.6 mW cm-2 and the open circuit potential is ca. 1.6 V. In order to obtain larger power densities and voltages three biobatteries are connected in a series which leads to the open circuit potential of ca. 4.8 V and power density 2.1 mW cm-2 at 3.9 V under 100 kΩ load. The biofuel cell shows power densities of ca. 60 μW cm-2 at 20 kΩ external resistance but the open circuit potential for such biofuel cell is only 0.5 V. The biobattery showing significantly larger power densities and open circuit voltages are especially useful for testing novel cathodes and applications such as powering units for clocks and sensing devices.

The study of aluminium anodes for high power density Al/air batteries with brine electrolytes

NASA Astrophysics Data System (ADS)

Nestoridi, Maria; Pletcher, Derek; Wood, Robert J. K.; Wang, Shuncai; Jones, Richard L.; Stokes, Keith R.; Wilcock, Ian

Aluminium alloys containing small additions of both tin (∼0.1 wt%) and gallium (∼0.05 wt%) are shown to dissolve anodically at high rates in sodium chloride media at room temperatures; current densities >0.2 A cm -2 can be obtained at potentials close to the open circuit potential, ∼-1500 mV versus SCE. The tin exists in the alloys as a second phase, typically as ∼1 μm inclusions (precipitates) distributed throughout the aluminium structure, and anodic dissolution occurs to form pits around the tin inclusions. Although the distribution of the gallium in the alloy could not be established, it is also shown to be critical in the formation of these pits as well as maintaining their activity. The stability of the alloys to open circuit corrosion and the overpotential for high rate dissolution, both critical to battery performance, are shown to depend on factors in addition to elemental composition; both heat treatment and mechanical working influence the performance of the alloy. The correlation between alloy performance and their microstructure has been investigated.

Conversion of Biomass Derivatives to Electricity in Photo Fuel Cells using Undoped and Tungsten-doped Bismuth Vanadate Photoanodes.

PubMed

Zhang, Bingqing; Shi, Jingying; Ding, Chunmei; Chong, Ruifeng; Zhang, Bao; Wang, Zhiliang; Li, Ailong; Liang, Zhenxing; Liao, Shijun; Li, Can

2015-12-07

The photo fuel cell (PFC) is a promising technology for simultaneously converting solar energy and bioenergy into electricity. Here, we present a miniature air-breathing PFC that uses either BiVO4 or W-doped BiVO4 as the photoanode and a Pt/C catalyst as the air-breathing cathode. The PFC exhibited excellent performance under solar illumination and when fed with several types of biomaterial. We found the PFC performance could be significantly enhanced using W-doping into the BiVO4 photoanode. With glucose as the fuel and simulated sunlight (AM 1.5 G) as the light source, the open-circuit voltage increased from 0.74 to 0.92 V, the short-circuit current density rose from 0.46 to 1.62 mA cm(-2) , and the maximum power density was boosted from 0.05 to 0.38 mW cm(-2) , compared to a PFC using undoped BiVO4 as the anode. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Novel Piezoelectric Paper‐Based Flexible Nanogenerators Composed of BaTiO3 Nanoparticles and Bacterial Cellulose

PubMed Central

Zhang, Guangjie; Liao, Qingliang; Zhang, Zheng; Liang, Qijie; Zhao, Yingli; Zheng, Xin

2015-01-01

A piezoelectric paper based on BaTiO3 (BTO) nanoparticles and bacterial cellulose (BC) with excellent output properties for application of nanogenerators (NGs) is reported. A facile and scalable vacuum filtration method is used to fabricate the piezoelectric paper. The BTO/BC piezoelectric paper based NG shows outstanding output performance with open‐circuit voltage of 14 V and short‐circuit current density of 190 nA cm−2. The maximum power density generated by this unique BTO/BC structure is more than ten times higher than BTO/polydimethylsiloxane structure. In bending conditions, the NG device can generate output voltage of 1.5 V, which is capable of driving a liquid crystal display screen. The improved performance can be ascribed to homogeneous distribution of piezoelectric BTO nanoparticles in the BC matrix as well as the enhanced stress on piezoelectric nanoparticles implemented by the unique percolated networks of BC nanofibers. The flexible BTO/BC piezoelectric paper based NG is lightweight, eco‐friendly, and cost‐effective, which holds great promises for achieving wearable or implantable energy harvesters and self‐powered electronics. PMID:27774389

Graphene Oxide/Poly(3-hexylthiophene) Nanocomposite Thin-Film Phototransistor for Logic Circuit Applications

NASA Astrophysics Data System (ADS)

Mansouri, S.; Coskun, B.; El Mir, L.; Al-Sehemi, Abdullah G.; Al-Ghamdi, Ahmed; Yakuphanoglu, F.

2018-04-01

Graphene is a sheet-structured material that lacks a forbidden band, being a good candidate for use in radiofrequency applications. We have elaborated graphene-oxide-doped poly(3-hexylthiophene) nanocomposite to increase the interlayer distance and thereby open a large bandgap for use in the field of logic circuits. Graphene oxide/poly(3-hexylthiophene) (GO/P3HT) nanocomposite thin-film transistors (TFTs) were fabricated on silicon oxide substrate by spin coating method. The current-voltage ( I- V) characteristics of TFTs with various P3HT compositions were studied in the dark and under light illumination. The photocurrent, charge carrier mobility, subthreshold voltage, density of interface states, density of occupied states, and I ON/ I OFF ratio of the devices strongly depended on the P3HT weight ratio in the composite. The effects of white-light illumination on the electrical parameters of the transistors were investigated. The results indicated that GO/P3HT nanocomposite thin-film transistors have high potential for use in radiofrequency applications, and their feasibility for use in digital applications has been demonstrated.

Improving the aluminum-air battery system for use in electrical vehicles

NASA Astrophysics Data System (ADS)

Yang, Shaohua

The objectives of this study include improvement of the efficiency of the aluminum/air battery system and demonstration of its ability for vehicle applications. The aluminum/air battery system can generate enough energy and power for driving ranges and acceleration similar to that of gasoline powered cars. Therefore has the potential to be a power source for electrical vehicles. Aluminum/air battery vehicle life cycle analysis was conducted and compared to that of lead/acid and nickel-metal hydride vehicles. Only the aluminum/air vehicles can be projected to have a travel range comparable to that of internal combustion engine vehicles (ICE). From this analysis, an aluminum/air vehicle is a promising candidate compared to ICE vehicles in terms of travel range, purchase price, fuel cost, and life cycle cost. We have chosen two grades of Al alloys (Al alloy 1350, 99.5% and Al alloy 1199, 99.99%) in our study. Only Al 1199 was studied extensively using Na 2SnO3 as an electrolyte additive. We then varied concentration and temperature, and determined the effects on the parasitic (corrosion) current density and open circuit potential. We also determined cell performance and selectivity curves. To optimize the performance of the cell based on our experiments, the recommended operating conditions are: 3--4 N NaOH, about 55°C, and a current density of 150--300 mA/cm2. We have modeled the cell performance using the equations we developed. The model prediction of cell performance shows good agreement with experimental data. For better cell performance, our model studies suggest use of higher electrolyte flow rate, smaller cell gap, higher conductivity and lower parasitic current density. We have analyzed the secondary current density distributions in a two plane, parallel Al/air cell and a wedge-type Al/air cell. The activity of the cathode has a large effect on the local current density. With increases in the cell gap, the local current density increases, but the increase is not as significant as the increase in the current density away from the entrance. By extending the cathode below the anode, the high local current density can be reduced.

Enhancing the performance of NaNbO3 triboelectric nanogenerators by dielectric modulation and electronegative modification

NASA Astrophysics Data System (ADS)

Lai, Meihui; Cheng, Lu; Xi, Yi; Wu, Yinghui; Hu, Chengguo; Guo, Hengyu; Du, Bolun; Liu, Guanlin; Liu, Qipeng; Liu, Ruchuan

2018-01-01

Increasing the triboelectric charge density on the friction layer of polydimethylsiloxane (PDMS) is a basic approach towards improving the output performance of a triboelectric nanogenerator (TENG). Most previous work focuses on the surface structure or dielectric properties, nonetheless, a few studies have focused on electronegative modification. NaNbO3-PDMS TENG (N-TENG) devices are fabricated by dispersing cubic NaNbO3, which is a lead-free piezoelectric material with molecular oxygen dangling bonds on the surface of the crystal, into the PDMS at different mass ratios. When the mass ratio is 7 wt%, the maximum output performance of the N-TENG is obtained. The open-circuit voltage is 550 V, the short-circuit current is 16 µA, and the effective power densities reach up to 5.5 W m-2 at a load resistance of ~100 MΩ. The N-TENG has been used to assemble self-powered electronic watches and illuminate commercial light-emitting diodes, respectively. Its fundamental mechanism has also been discussed in detail from the perspective of dielectric modulation and electronegative modification. This N-TENG technology is revealed to be a splendid candidate for application in large-scale device fabrication, flexible sensors and biological devices thanks to its easy fabrication process, low consumption, high output power density and biocompatibility.

Tuning the Electron-Transport and Electron-Accepting Abilities of Dyes through Introduction of Different π-Conjugated Bridges and Acceptors for Dye-Sensitized Solar Cells.

PubMed

Li, Yuanzuo; Sun, Chaofan; Song, Peng; Ma, Fengcai; Yang, Yanhui

2017-02-17

A series of dyes, containing thiophene and thieno[3,2-b]thiophene as π-conjugated bridging units and six kinds of groups as electron acceptors, were designed for dye-sensitized solar cells (DSSCs). The ground- and excited-state properties of the designed dyes were investigated by using density functional theory (DFT) and time-dependent DFT, respectively. Moreover, the parameters affecting the short-circuit current density and open-circuit voltage were calculated to predict the photoelectrical performance of each dye. In addition, the charge difference density was presented through a three-dimensional (3D) real-space analysis method to investigate the electron-injection mechanism in the complexes. Our results show that the longer conjugated bridge would inhibit the intramolecular charge transfer, thereby affecting the photoelectrical properties of DSSCs. Similarly, owing to the lowest chemical hardness, largest electron-accepting ability, dipole moment (μnormal ) and the change in the energy of the TiO 2 conduction band (ΔECB ), the dye with a (E)-3-(4-(benzo[c][1,2,5]thiadiazol-4-yl)phenyl)-2-cyanoacrylic acid (TCA) acceptor group would exhibit the most significant photoelectrical properties among the designed dyes. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Transparent nanotubular capacitors based on transplanted anodic aluminum oxide templates.

PubMed

Zhang, Guozhen; Wu, Hao; Chen, Chao; Wang, Ti; Wu, Wenhui; Yue, Jin; Liu, Chang

2015-03-11

Transparent AlZnO/Al2O3/AlZnO nanocapacitor arrays have been fabricated by atomic layer deposition in anodic aluminum oxide templates transplanted on the AlZnO/glass substrates. A high capacitance density of 37 fF/μm(2) is obtained, which is nearly 5.8 times bigger than that of planar capacitors. The capacitance density almost remains the same in a broad frequency range from 1 kHz to 200 kHz. Moreover, a low leakage current density of 1.7 × 10(-7) A/cm(2) at 1 V has been achieved. The nanocapacitors exhibit an average optical transmittance of more than 80% in the visible range, and thus open the door to practical applications in transparent integrated circuits.

Alkaline-Acid Zn-H2 O Fuel Cell for the Simultaneous Generation of Hydrogen and Electricity.

PubMed

Cai, Pingwei; Li, Yan; Wang, Genxiang; Wen, Zhenhai

2018-04-03

An alkaline-acid Zn-H 2 O fuel cell is proposed for the simultaneous generation of electricity with an open circuit voltage of about 1.25 V and production of H 2 with almost 100 % Faradic efficiency. We demonstrate that, as a result of harvesting energy from both electrochemical neutralization and electrochemical Zn oxidation, the as-developed hybrid cell can deliver a power density of up to 80 mW cm -2 and an energy density of 934 Wh kg -1 and maintain long-term stability for H 2 production with an output voltage of 1.16 V at a current density of 10 mA cm -2 . © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Measurements and Modeling of III-V Solar Cells at High Temperatures up to 400 $${}^{\\circ}$$ C

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perl, Emmett E.; Simon, John; Geisz, John F.

2016-09-01

In this paper, we study the performance of 2.0 eV Al0.12Ga0.39In0.49P and 1.4 eV GaAs solar cells over a temperature range of 25-400 degrees C. The temperature-dependent J01 and J02 dark currents are extracted by fitting current-voltage measurements to a two-diode model. We find that the intrinsic carrier concentration ni dominates the temperature dependence of the dark currents, open-circuit voltage, and cell efficiency. To study the impact of temperature on the photocurrent and bandgap of the solar cells, we measure the quantum efficiency and illuminated current-voltage characteristics of the devices up to 400 degrees C. As the temperature is increased,more » we observe no degradation to the internal quantum efficiency and a decrease in the bandgap. These two factors drive an increase in the short-circuit current density at high temperatures. Finally, we measure the devices at concentrations ranging from ~30 to 1500 suns and observe n = 1 recombination characteristics across the entire temperature range. These findings should be a valuable guide to the design of any system that requires high-temperature solar cell operation.« less

Radio Frequency Transistors and Circuits Based on CVD MoS2.

PubMed

Sanne, Atresh; Ghosh, Rudresh; Rai, Amritesh; Yogeesh, Maruthi Nagavalli; Shin, Seung Heon; Sharma, Ankit; Jarvis, Karalee; Mathew, Leo; Rao, Rajesh; Akinwande, Deji; Banerjee, Sanjay

2015-08-12

We report on the gigahertz radio frequency (RF) performance of chemical vapor deposited (CVD) monolayer MoS2 field-effect transistors (FETs). Initial DC characterizations of fabricated MoS2 FETs yielded current densities exceeding 200 μA/μm and maximum transconductance of 38 μS/μm. A contact resistance corrected low-field mobility of 55 cm(2)/(V s) was achieved. Radio frequency FETs were fabricated in the ground-signal-ground (GSG) layout, and standard de-embedding techniques were applied. Operating at the peak transconductance, we obtain short-circuit current-gain intrinsic cutoff frequency, fT, of 6.7 GHz and maximum intrinsic oscillation frequency, fmax, of 5.3 GHz for a device with a gate length of 250 nm. The MoS2 device afforded an extrinsic voltage gain Av of 6 dB at 100 MHz with voltage amplification until 3 GHz. With the as-measured frequency performance of CVD MoS2, we provide the first demonstration of a common-source (CS) amplifier with voltage gain of 14 dB and an active frequency mixer with conversion gain of -15 dB. Our results of gigahertz frequency performance as well as analog circuit operation show that large area CVD MoS2 may be suitable for industrial-scale electronic applications.

Application of a high-energy-density permanent magnet material in underwater systems

NASA Astrophysics Data System (ADS)

Cho, C. P.; Egan, C.; Krol, W. P.

1996-06-01

This paper addresses the application of high-energy-density permanent magnet (PM) technology to (1) the brushless, axial-field PM motor and (2) the integrated electric motor/pump system for under-water applications. Finite-element analysis and lumped parameter magnetic circuit analysis were used to calculate motor parameters and performance characteristics and to conduct tradeoff studies. Compact, efficient, reliable, and quiet underwater systems are attainable with the development of high-energy-density PM material, power electronic devices, and power integrated-circuit technology.

The study of colloidal lead bromide perovskite nanocrystals and its application in hybrid solar cells

NASA Astrophysics Data System (ADS)

Usman, Khurram; Ming, Shuaiqiang; Liu, Xiaohui; Li, Xiaodong; Gui, Zhenzhen; Xie, Qiaomu; Zhang, Wenxiao; Wu, Yulei; Wang, Hai-Qiao; Fang, Junfeng

2018-03-01

In this study, we investigated inorganic cesium lead halide perovskite semiconductor and tested its application in photovoltaics. Highly crystalline material was synthesized by two different approaches, including a high temperature route and a low temperature method. Inorganic-polymer hybrid solar cells based on solution-deposited layers of CsPbBr3 nanocrystals were successfully fabricated in ambient, with and without post treatments. The solar cells employing nanocrystals with short ligands, obtained from low temperature route, outperformed the devices with long ligands. The devices exhibited an efficiency up to 1.16%, with an open circuit voltage (V oc) of 0.87 V, a fill factor of 56.2% and a short-circuit current density (J sc) of 2.38 mA/cm2.

Realization of highly efficient polymer solar cell based on PBDTTT-EFT and [71]PCBM

NASA Astrophysics Data System (ADS)

Bharti, Vishal; Chand, Suresh; Dutta, Viresh

2018-04-01

In this work, we have fabricated highly efficient polymer solar cells based on the blend of PBDTTT-EFT:PC71BM in the inverted device configuration. By using low temperature processed zinc oxide (ZnO) nanoparticles as an electron-transport layer (ETL) and 1,8-diiodooctane (DIO) as additive in chlorobenzene (CB) solvent we have achieved PCE of 9.43% with an excellent short-circuit current density (Jsc) of 17.6 mAcm-2, open circuit voltage (Voc) of 0.80 V and fill factor (FF) of 0.67. These results reveals that addition of 3% DIO additive in CB solvent improve the morphology (lower charge carrier recombination and better metal/organic semiconductor interface) and provide uniform interpenetrating networks in PBDTTT-EFT:PC71BM blend active layer.

Robust High-performance Dye-sensitized Solar Cells Based on Ionic Liquid-sulfolane Composite Electrolytes.

PubMed

Lau, Genevieve P S; Décoppet, Jean-David; Moehl, Thomas; Zakeeruddin, Shaik M; Grätzel, Michael; Dyson, Paul J

2015-12-16

Novel ionic liquid-sulfolane composite electrolytes based on the 1,2,3-triazolium family of ionic liquids were developed for dye-sensitized solar cells. The best performing device exhibited a short-circuit current density of 13.4 mA cm(-2), an open-circuit voltage of 713 mV and a fill factor of 0.65, corresponding to an overall power conversion efficiency (PCE) of 6.3%. In addition, these devices are highly stable, retaining more than 95% of the initial device PCE after 1000 hours of light- and heat-stress. These composite electrolytes show great promise for industrial application as they allow for a 14.5% improvement in PCE, compared to the solvent-free eutectic ionic liquid electrolyte system, without compromising device stability.

Single Wall Carbon Nanotube-polymer Solar Cells

NASA Technical Reports Server (NTRS)

Bailey, Sheila G.; Castro, Stephanie L.; Landi, Brian J.; Gennett, Thomas; Raffaelle, Ryne P.

2005-01-01

Investigation of single wall carbon nanotube (SWNT)-polymer solar cells has been conducted towards developing alternative lightweight, flexible devices for space power applications. Photovoltaic devices were constructed with regioregular poly(3-octylthiophene)-(P3OT) and purified, >95% w/w, laser-generated SWNTs. The P3OT composites were deposited on ITO-coated polyethylene terapthalate (PET) and I-V characterization was performed under simulated AM0 illumination. Fabricated devices for the 1.0% w/w SWNT-P3OT composites showed a photoresponse with an open-circuit voltage (V(sub oc)) of 0.98 V and a short-circuit current density (I(sub sc)) of 0.12 mA/sq cm. Optimization of carrier transport within these novel photovoltaic systems is proposed, specifically development of nanostructure-SWNT complexes to enhance exciton dissociation.

ZnO Hierarchical Nanostructure Photoanode in a CdS Quantum Dot-Sensitized Solar Cell

PubMed Central

Liu, Huan; Zhang, Gengmin; Sun, Wentao; Shen, Ziyong; Shi, Mingji

2015-01-01

A hierarchical array of ZnO nanocones covered with ZnO nanospikes was hydrothermally fabricated and employed as the photoanode in a CdS quantum dot-sensitized solar cell (QDSSC). This QDSSC outperformed the QDSSC based on a simple ZnO nanocone photoanode in all the four principal photovoltaic parameters. Using the hierarchical photoanode dramatically increased the short circuit current density and also slightly raised the open circuit voltage and the fill factor. As a result, the conversion efficiency of the QDSSC based on the hierarchical photoanode was more than twice that of the QDSSC based on the simple ZnO nanocone photoanode. This improvement is attributable to both the enlarged specific area of the photoanode and the reduction in the recombination of the photoexcited electrons. PMID:26379268

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO 2 Contact

DOE PAGES

Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; ...

2014-09-25

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (~10 nm) of amorphous TiO 2 deposited at 120°C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. Lastly, a hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency ofmore » 19.2%.« less

Particle Acceleration in Dissipative Pulsar Magnetospheres

NASA Technical Reports Server (NTRS)

Kazanas, Z.; Kalapotharakos, C.; Harding, A.; Contopoulos, I.

2012-01-01

Pulsar magnetospheres represent unipolar inductor-type electrical circuits at which an EM potential across the polar cap (due to the rotation of their magnetic field) drives currents that run in and out of the polar cap and close at infinity. An estimate ofthe magnitude of this current can be obtained by dividing the potential induced across the polar cap V approx = B(sub O) R(sub O)(Omega R(sub O)/c)(exp 2) by the impedance of free space Z approx eq 4 pi/c; the resulting polar cap current density is close to $n {GJ} c$ where $n_{GJ}$ is the Goldreich-Julian (GJ) charge density. This argument suggests that even at current densities close to the GJ one, pulsar magnetospheres have a significant component of electric field $E_{parallel}$, parallel to the magnetic field, a condition necessary for particle acceleration and the production of radiation. We present the magnetic and electric field structures as well as the currents, charge densities, spin down rates and potential drops along the magnetic field lines of pulsar magnetospheres which do not obey the ideal MHD condition $E cdot B = 0$. By relating the current density along the poloidal field lines to the parallel electric field via a kind of Ohm's law $J = sigma E_{parallel}$ we study the structure of these magnetospheres as a function of the conductivity $sigma$. We find that for $sigma gg OmegaS the solution tends to the (ideal) Force-Free one and to the Vacuum one for $sigma 11 OmegaS. Finally, we present dissipative magnetospheric solutions with spatially variable $sigma$ that supports various microphysical properties and are compatible with the observations.

Overload protection system for power inverter

NASA Technical Reports Server (NTRS)

Nagano, S. (Inventor)

1977-01-01

An overload protection system for a power inverter utilized a first circuit for monitoring current to the load from the power inverter to detect an overload and a control circuit to shut off the power inverter, when an overload condition was detected. At the same time, a monitoring current inverter was turned on to deliver current to the load at a very low power level. A second circuit monitored current to the load, from the monitoring current inverter, to hold the power inverter off through the control circuit, until the overload condition was cleared so that the control circuit may be deactivated in order for the power inverter to be restored after the monitoring current inverter is turned off completely.

30 CFR 18.51 - Electrical protection of circuits and equipment.

Code of Federal Regulations, 2011 CFR

2011-07-01

... the junction with the main circuit when the branch-circuit conductor(s) has a current carrying... same duty. (1) If the overcurrent-protective device in a direct-current circuit does not open both... preventing the possibility of reversing connections which would result in changing the circuit interrupter to...

30 CFR 18.51 - Electrical protection of circuits and equipment.

Code of Federal Regulations, 2010 CFR

2010-07-01

... the junction with the main circuit when the branch-circuit conductor(s) has a current carrying... same duty. (1) If the overcurrent-protective device in a direct-current circuit does not open both... preventing the possibility of reversing connections which would result in changing the circuit interrupter to...

Device, system and method for a sensing electrical circuit

NASA Technical Reports Server (NTRS)

Vranish, John M. (Inventor)

2009-01-01

The invention relates to a driven ground electrical circuit. A driven ground is a current-measuring ground termination to an electrical circuit with the current measured as a vector with amplification. The driven ground module may include an electric potential source V.sub.S driving an electric current through an impedance (load Z) to a driven ground. Voltage from the source V.sub.S excites the minus terminal of an operational amplifier inside the driven ground which, in turn, may react by generating an equal and opposite voltage to drive the net potential to approximately zero (effectively ground). A driven ground may also be a means of passing information via the current passing through one grounded circuit to another electronic circuit as input. It may ground one circuit, amplify the information carried in its current and pass this information on as input to the next circuit.

Magnetic field line reconnection experiments. V - Current disruptions and double layers

NASA Technical Reports Server (NTRS)

Stenzel, R. L.; Gekelman, W.; Wild, N.

1983-01-01

An investigation is conducted of the stability of a large laboratory plasma current sheet, which has been generated in the process of magnetic field line reconnection, with respect to local current increases. Magnetic flux variations in regions remote from the current sheet generate an inductive voltage in the current loop that drops off inside the plasma in the form of a potential double layer, leading to particle acceleration with velocities much larger than those expected from the steady state electric fields in the plasma. A model for the mechanism of the current disruptions is formulated in which the potential structure leads to ion expulsion, creating a localized density drop. The associated current drop in an inductive circuit drives the potential structure, providing feedback for the disruptive instability. Similarities to, and differences from, magnetospheric substorm phenomena are noted.

Effect of Joule heating and current crowding on electromigration in mobile technology

NASA Astrophysics Data System (ADS)

Tu, K. N.; Liu, Yingxia; Li, Menglu

2017-03-01

In the present era of big data and internet of things, the use of microelectronic products in all aspects of our life is manifested by the ubiquitous presence of mobile devices as i-phones and wearable i-products. These devices are facing the need for higher power and greater functionality applications such as in i-health, yet they are limited by physical size. At the moment, software (Apps) is much ahead of hardware in mobile technology. To advance hardware, the end of Moore's law in two-dimensional integrated circuits can be extended by three-dimensional integrated circuits (3D ICs). The concept of 3D ICs has been with us for more than ten years. The challenge in 3D IC technology is dense packing by using both vertical and horizontal interconnections. Mass production of 3D IC devices is behind schedule due to cost because of low yield and uncertain reliability. Joule heating is serious in a dense structure because of heat generation and dissipation. A change of reliability paradigm has advanced from failure at a specific circuit component to failure at a system level weak-link. Currently, the electronic industry is introducing 3D IC devices in mainframe computers, where cost is not an issue, for the purpose of collecting field data of failure, especially the effect of Joule heating and current crowding on electromigration. This review will concentrate on the positive feedback between Joule heating and electromigration, resulting in an accelerated system level weak-link failure. A new driving force of electromigration, the electric potential gradient force due to current crowding, will be reviewed critically. The induced failure tends to occur in the low current density region.

The photovoltaic properties of an Al In As/InP heterojunctions grown by LPE method

NASA Technical Reports Server (NTRS)

Wang, Edward Y.

1989-01-01

Work is presented on heterojunction solar cells which were studied under the NASA/Arizona State University intern program. The heterojunction solar cells were fabricated by the liquid phase epitaxy method. The basic conversion efficiency was measured at 5 percent. It was determined that a thicker epilayer is needed, and that the density of recombination center should be reduced to give a smaller saturation current and hence a larger open-circuit voltage.

GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Juang, Bor-Chau, E-mail: bcjuang@ucla.edu; Laghumavarapu, Ramesh B.; Foggo, Brandon J.

There exists a long-term need for foreign substrates on which to grow GaSb-based optoelectronic devices. We address this need by using interfacial misfit arrays to grow GaSb-based thermophotovoltaic cells directly on GaAs (001) substrates and demonstrate promising performance. We compare these cells to control devices grown on GaSb substrates to assess device properties and material quality. The room temperature dark current densities show similar characteristics for both cells on GaAs and on GaSb. Under solar simulation the cells on GaAs exhibit an open-circuit voltage of 0.121 V and a short-circuit current density of 15.5 mA/cm{sup 2}. In addition, the cells on GaAsmore » substrates maintain 10% difference in spectral response to those of the control cells over a large range of wavelengths. While the cells on GaSb substrates in general offer better performance than the cells on GaAs substrates, the cost-savings and scalability offered by GaAs substrates could potentially outweigh the reduction in performance. By further optimizing GaSb buffer growth on GaAs substrates, Sb-based compound semiconductors grown on GaAs substrates with similar performance to devices grown directly on GaSb substrates could be realized.« less

Photovoltaic Properties of Selenized CuGa/In Films with Varied Compositions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muzzillo, Christopher P.; Mansfield, Lorelle M.; Ramanathan, Kannan

2016-11-21

Thin CuGa/In films with varied compositions were deposited by co-evaporation and then selenized in situ with evaporated selenium. The selenized Cu(In, Ga)Se2 absorbers were used to fabricate 390 solar cells. Cu/(Ga+In) and Ga/(Ga+In) (Cu/III and Ga/III) were independently varied, and photovoltaic performance was optimal at Cu/III of 77-92% for all Ga/III compositions studied (Ga/III ~ 30, 50, and 70%). The best absorbers at each Ga/III composition were characterized with time-resolved photoluminescence, scanning electron microscopy, and secondary ion mass spectrometry, and devices were studied with temperature-dependent current density-voltage, light and electrical biased quantum efficiency, and capacitance-voltage. The best cells with Ga/IIImore » ~ 30, 50, and 70% had efficiencies of 14.5, 14.4, and 12.2% and maximum power temperature coefficients of -0.496, -0.452, and -0.413%/degrees C, respectively. This resulted in the Ga/III ~ 50% champion having the highest efficiency at temperatures greater than 40 degrees C, making it the optimal composition for practical purposes. This optimum is understood as a result of the absorber's band gap grading- where minimum band gap dominates short-circuit current density, maximum space charge region band gap dominates open-circuit voltage, and average absorber band gap dominates maximum power temperature coefficient.« less

Application of amorphous carbon based materials as antireflective coatings on crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

da Silva, D. S.; Côrtes, A. D. S.; Oliveira, M. H.; Motta, E. F.; Viana, G. A.; Mei, P. R.; Marques, F. C.

2011-08-01

We report on the investigation of the potential application of different forms of amorphous carbon (a-C and a-C:H) as an antireflective coating for crystalline silicon solar cells. Polymeric-like carbon (PLC) and hydrogenated diamond-like carbon films were deposited by plasma enhanced chemical vapor deposition. Tetrahedral amorphous carbon (ta-C) was deposited by the filtered cathodic vacuum arc technique. Those three different amorphous carbon structures were individually applied as single antireflective coatings on conventional (polished and texturized) p-n junction crystalline silicon solar cells. Due to their optical properties, good results were also obtained for double-layer antireflective coatings based on PLC or ta-C films combined with different materials. The results are compared with a conventional tin dioxide (SnO2) single-layer antireflective coating and zinc sulfide/magnesium fluoride (ZnS/MgF2) double-layer antireflective coatings. An increase of 23.7% in the short-circuit current density, Jsc, was obtained using PLC as an antireflective coating and 31.7% was achieved using a double-layer of PLC with a layer of magnesium fluoride (MgF2). An additional increase of 10.8% was obtained in texturized silicon, representing a total increase (texturization + double-layer) of about 40% in the short-circuit current density. The potential use of these materials are critically addressed considering their refractive index, optical bandgap, absorption coefficient, hardness, chemical inertness, and mechanical stability.

Electrical Characterization of Semiconductor and Dielectric Materials with a Non-Damaging FastGateTM Probe

NASA Astrophysics Data System (ADS)

Robert, Hillard; William, Howland; Bryan, Snyder

2002-03-01

Determination of the electrical properties of semiconductor materials and dielectrics is highly desirable since these correlate best to final device performance. The properties of SiO2 and high k dielectrics such as Equivalent Oxide Thickness(EOT), Interface Trap Density(Dit), Oxide Effective Charge(Neff), Flatband Voltage Hysteresis(Delta Vfb), Threshold Voltage(VT) and, bulk properties such as carrier density profile and channel dose are all important parameters that require monitoring during front end processing. Conventional methods for determining these parameters involve the manufacturing of polysilicon or metal gate MOS capacitors and subsequent measurements of capacitance-voltage(CV) and/or current-voltage(IV). These conventional techniques are time consuming and can introduce changes to the materials being monitored. Also, equivalent circuit effects resulting from excessive leakage current, series resistance and stray inductance can introduce large errors in the measured results. In this paper, a new method is discussed that provides rapid determination of these critical parameters and is robust against equivalent circuit errors. This technique uses a small diameter(30 micron), elastically deformed probe to form a gate for MOSCAP CV and IV and can be used to measure either monitor wafers or test areas within scribe lines on product wafers. It allows for measurements of dielectrics thinner than 10 Angstroms. A detailed description and applications such as high k dielectrics, will be presented.

Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

NASA Technical Reports Server (NTRS)

Ringel, S. A.; Carlin, J. A.; Andre, C. L.; Hudait, M. K.; Gonzalez, M.; Wilt, D. M.; Clark, E. B.; Jenkins, P.; Scheiman, D.; Allerman, A.

2002-01-01

Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

Driver circuit for solid state light sources

DOEpatents

Palmer, Fred; Denvir, Kerry; Allen, Steven

2016-02-16

A driver circuit for a light source including one or more solid state light sources, a luminaire including the same, and a method of so driving the solid state light sources are provided. The driver circuit includes a rectifier circuit that receives an alternating current (AC) input voltage and provides a rectified AC voltage. The driver circuit also includes a switching converter circuit coupled to the light source. The switching converter circuit provides a direct current (DC) output to the light source in response to the rectified AC voltage. The driver circuit also includes a mixing circuit, coupled to the light source, to switch current through at least one solid state light source of the light source in response to each of a plurality of consecutive half-waves of the rectified AC voltage.

Short-circuit current and ionic fluxes in the isolated colonic mucosa of Bufo arenarum

PubMed Central

Lew, V. L.

1970-01-01

1. The unidirectional fluxes of 22Na, 36Cl and [14C]bicarbonate ions were measured in paired portions of the isolated and short-circuited colonic mucosa of Bufo arenarum, separated from its muscular layer. Pharmacological effects as well as effects of changes in the composition of the nutrient solutions on the electrical parameters of membrane activity (potential difference, short-circuit current and total membrane resistance) are described. 2. The net fluxes of both Cl and bicarbonate ions were not significantly different from zero in the absence of electrochemical gradients across the membrane. 3. The net Na flux from mucosa to serosa represented a variable proportion of the short-circuit current ranging from 62 to 100%. 4. The proportion of membranes with high discrepancies between net Na flux and short-circuit current decreased with the duration of captivity of the toads. 5. When Na was entirely replaced by choline in the mucosal bathing solution, the short-circuit current dropped by a variable amount within the range of 64 to 98% of its control values in different membranes. This effect was completely reversible. Similar changes in the serosal solution had no effect. 6. The short-circuit current and potential difference were very sensitive to the serosal concentration of bicarbonate ions. In different membranes, 60-100% of the short-circuit current was reversibly abolished by bathing the serosal surface with a bicarbonate-free solution. The mucosal bicarbonate level had no effect on either the potential difference or the short-circuit current. 5 mM bicarbonate in the serosal solution restored at least 50% of the short-circuit control value and full recovery was attained by concentrations near 30 mM bicarbonate. 7. Anoxia brought the potential difference and short-circuit current reversibly down to zero in about 50 min. 8. Ouabain reduced the short-circuit current up to 80% in about 40 min when present in the serosal solution at a concentration of 10-4 M. At this or lower concentrations the ouabain effect was reversible. Above this level ouabain produced 100% inhibition in 3-4 hr, but this was no longer reversible. Ouabain had no effect on the short-circuit current either when applied to the mucosal surface or in the absence of Na from the mucosal solution. 9. Diamox produced a variable inhibition of the short-circuit current of up to 30% only at concentrations above 10 mM. 10. Possible mechanisms are discussed for the appearance of the non-Na component of the short-circuit current. A theory concerning its nature is proposed. PMID:5498503

Circuit engineering principles for construction of bipolar large-scale integrated circuit storage devices and very large-scale main memory

NASA Astrophysics Data System (ADS)

Neklyudov, A. A.; Savenkov, V. N.; Sergeyez, A. G.

1984-06-01

Memories are improved by increasing speed or the memory volume on a single chip. The most effective means for increasing speeds in bipolar memories are current control circuits with the lowest extraction times for a specific power consumption (1/4 pJ/bit). The control current circuitry involves multistage current switches and circuits accelerating transient processes in storage elements and links. Circuit principles for the design of bipolar memories with maximum speeds for an assigned minimum of circuit topology are analyzed. Two main classes of storage with current control are considered: the ECL type and super-integrated injection type storage with data capacities of N = 1/4 and N 4/16, respectively. The circuits reduce logic voltage differentials and the volumes of lexical and discharge buses and control circuit buses. The limiting speed is determined by the antiinterference requirements of the memory in storage and extraction modes.

30 CFR 75.900-3 - Testing, examination, and maintenance of circuit breakers; procedures.

Code of Federal Regulations, 2010 CFR

2010-07-01

... current circuits serving three-phase alternating current equipment and their auxiliary devices shall be... Underground Low- and Medium-Voltage Alternating Current Circuits § 75.900-3 Testing, examination, and...

30 CFR 75.900-3 - Testing, examination, and maintenance of circuit breakers; procedures.

Code of Federal Regulations, 2011 CFR

2011-07-01

... current circuits serving three-phase alternating current equipment and their auxiliary devices shall be... Underground Low- and Medium-Voltage Alternating Current Circuits § 75.900-3 Testing, examination, and...

Disk-accreting magnetic neutron stars as high-energy particle accelerators

NASA Technical Reports Server (NTRS)

Hamilton, Russell J.; Lamb, Frederick K.; Miller, M. Coleman

1994-01-01

Interaction of an accretion disk with the magnetic field of a neutron star produces large electromotive forces, which drive large conduction currents in the disk-magnetosphere-star circuit. Here we argue that such large conduction currents will cause microscopic and macroscopic instabilities in the magnetosphere. If the minimum plasma density in the magnetosphere is relatively low is less than or aproximately 10(exp 9)/cu cm, current-driven micro-instabilities may cause relativistic double layers to form, producing voltage differences in excess of 10(exp 12) V and accelerating charged particles to very high energies. If instead the plasma density is higher (is greater than or approximately = 10(exp 9)/cu cm, twisting of the stellar magnetic field is likely to cause magnetic field reconnection. This reconnection will be relativistic, accelerating plasma in the magnetosphere to relativistic speeds and a small fraction of particles to very high energies. Interaction of these high-energy particles with X-rays, gamma-rays, and accreting plasma may produce detectable high-energy radiation.

Fundamentals of Physics, Part 3 (Chapters 22-33)

NASA Astrophysics Data System (ADS)

Halliday, David; Resnick, Robert; Walker, Jearl

2004-03-01

Chapter 21. Electric Charge. Why do video monitors in surgical rooms increase the risk of bacterial contamination? 21-1 What Is Physics? 21-2 Electric Charge. 21-3 Conductors and Insulators. 21-4 Coulomb's Law. 21-5 Charge Is Quantized. 21-6 Charge Is Conserved. Review & Summary. Questions. Problems. Chapter 22. Electric Fields. What causes sprites, those brief .ashes of light high above lightning storms? 22-1 What Is Physics? 22-2 The Electric Field. 22-3 Electric Field Lines. 22-4 The Electric Field Due to a Point Charge. 22-5 The Electric Field Due to an Electric Dipole. 22-6 The Electric Field Due to a Line of Charge. 22-7 The Electric Field Due to a Charged Disk. 22-8 A Point Charge in an Electric Field. 22-9 A Dipole in an Electric Field. Review & Summary. Questions. Problems. Chapter 23. Gauss' Law. How can lightning harm you even if it do es not strike you? 23-1 What Is Physics? 23-2 Flux. 23-3 Flux of an Electric Field. 23-4 Gauss' Law. 23-5 Gauss' Law and Coulomb's Law. 23-6 A Charged Isolated Conductor. 23-7 Applying Gauss' Law: Cylindrical Symmetry. 23-8 Applying Gauss' Law: Planar Symmetry. 23-9 Applying Gauss' Law: Spherical Symmetry. Review & Summary. Questions. Problems. Chapter 24. Electric Potential. What danger does a sweater pose to a computer? 24-1 What Is Physics? 24-2 Electric Potential Energy. 24-3 Electric Potential. 24-4 Equipotential Surfaces. 24-5 Calculating the Potential from the Field. 24-6 Potential Due to a Point Charge. 24-7 Potential Due to a Group of Point Charges. 24-8 Potential Due to an Electric Dipole. 24-9 Potential Due to a Continuous Charge Distribution. 24-10 Calculating the Field from the Potential. 24-11 Electric Potential Energy of a System of Point Charges. 24-12 Potential of a Charged Isolated Conductor. Review & Summary. Questions. Problems. Chapter 25. Capacitance. How did a fire start in a stretcher being withdrawn from an oxygen chamber? 25-1 What Is Physics? 25-2 Capacitance. 25-3 Calculating the Capacitance. 25-4 Capacitors in Parallel and in Series. 25-5 Energy Stored in an Electric Field. 25-6 Capacitor with a Dielectric. 25-7 Dielectrics: An Atomic View. 25-8 Dielectrics and Gauss' Law. Review & Summary. Questions. Problems. Chapter 26. Current and Resistance. What precaution should you take if caught outdoors during a lightning storm? 26-1 What Is Physics? 26-2 Electric Current. 26-3 Current Density. 26-4 Resistance and Resistivity. 26-5 Ohm's Law. 26-6 A Microscopic View of Ohm's Law. 26-7 Power in Electric Circuits. 26-8 Semiconductors. 26-9 Superconductors. Review & Summary. Questions. Problems. Chapter 27. Circuits. How can a pit crew avoid a fire while fueling a charged race car? 27-1 What Is Physics? 27-2 "Pumping" Charges. 27-3 Work, Energy, and Emf. 27-4 Calculating the Current in a Single-Loop Circuit. 27-5 Other Single-Loop Circuits. 27-6 Potential Difference Between Two Points. 27-7 Multiloop Circuits. 27-8 The Ammeter and the Voltmeter. 27-9 RC Circuits. Review & Summary. Questions. Problems. Chapter 28. Magnetic Fields. How can a beam of fast neutrons, which are electrically neutral, be produced in a hospital to treat cancer patients? 28-1 What Is Physics? 28-2 What Produces a Magnetic Field? 28-3 The Definition of 736 :B. 28-4 Crossed Fields: Discovery of the Electron . 28-5 Crossed Fields: The Hall Effect. 28-6 A Circulating Charged Particle. 28-7 Cyclotrons and Synchrotrons. 28-8 Magnetic Force on a Current-Carrying Wire. 28-9 Torque on a Current Loop. 28-10 The Magnetic Dipole Moment. Review & Summary. Questions. Problems. Chapter 29. Magnetic Fields Due to Currents. How can the human brain produce a detectable magnetic field without any magnetic material? 29-1 What Is Physics? 29-2 Calculating the Magnetic Field Due to a Current. 29-3 Force Between Two Parallel Currents. 29-4 Ampere's Law. 29-5 Solenoids and Toroids. 29-6 A Current-Carrying Coil as a Magnetic Dipole. Review & Summary. Questions. Problems. Chapter 30. Induction and Inductance. How can the magnetic .eld used in an MRI scan cause a patient to be burned? 30-1 What Is Physics? 30-2 Two Experiments. 30-3 Faraday's Law of Induction. 30-4 Lenz's Law. 30-5 Induction and Energy Transfers. 30-6 Induced Electric Fields. 30-7 Inductors and Inductance. 30-8 Self-Induction. 30-9 RL Circuits. 30-10 Energy Stored in a Magnetic Field. 30-11 Energy Density of a Magnetic Field. 30-12 Mutual Induction. Review & Summary. Questions. Problems. Chapter 31. Electromagnetic Oscillations and Alternating Current. How did a solar eruption knock out the power-grid system of Quebec? 31-1 What Is Physics? 31-2 LC Oscillations, Qualitatively. 31-3 The Electrical-Mechanical Analogy. 31-4 LC Oscillations, Quantitatively. 31-5 Damped Oscillations in an RLC Circuit. 31-6 Alternating Current. 31-7 Forced Oscillations. 31-8 Three Simple Circuits. 31-9 The Series RLC Circuit. 31-10 Power in Alternating-Current Circuits. 31-11 Transformers. Review & Summary. Questions. Problems. Chapter 32. Maxwell's Equations; Magnetism of Matter. How can a mural painting record the direction of Earth's magnetic field? 32-1 What Is Physics? 32-2 Gauss' Law for Magnetic Fields. 32-3 Induced Magnetic Fields. 32-4 Displacement Current. 32-5 Maxwell's Equations. 32-6 Magnets. 32-7 Magnetism and Electrons. 32-8 Magnetic Materials. 32-9 Diamagnetism. 32-10 Paramagnetism. 32-11 Ferromagnetism. Review & Summary. Questions. Problems. Appendices. A. The International System of Units (SI). B. Some Fundamental Constants of Physics. C. Some Astronomical Data. D. Conversion Factors. E. Mathematical Formulas. F. Properties of the Elements. G. Periodic Table of the Elements. Answers to Checkpoints and Odd-Numbered Questions and Problems. Index.

Practical applications of current loop signal conditioning

NASA Astrophysics Data System (ADS)

Anderson, Karl F.

1994-10-01

This paper describes a variety of practical application circuits based on the current loop signal conditioning paradigm. Equations defining the circuit response are also provided. The constant current loop is a fundamental signal conditioning circuit concept that can be implemented in a variety of configurations for resistance-based transducers, such as strain gages and resistance temperature devices. The circuit features signal conditioning outputs which are unaffected by extremely large variations in lead wire resistance, direct current frequency response, and inherent linearity with respect to resistance change. Sensitivity of this circuit is double that of a Wheatstone bridge circuit. Electrical output is zero for resistance change equals zero. The same excitation and output sense wires can serve multiple transducers. More application arrangements are possible with constant current loop signal conditioning than with the Wheatstone bridge.

Current loop signal conditioning: Practical applications

NASA Technical Reports Server (NTRS)

Anderson, Karl F.

1995-01-01

This paper describes a variety of practical application circuits based on the current loop signal conditioning paradigm. Equations defining the circuit response are also provided. The constant current loop is a fundamental signal conditioning circuit concept that can be implemented in a variety of configurations for resistance-based transducers, such as strain gages and resistance temperature detectors. The circuit features signal conditioning outputs which are unaffected by extremely large variations in lead wire resistance, direct current frequency response, and inherent linearity with respect to resistance change. Sensitivity of this circuit is double that of a Wheatstone bridge circuit. Electrical output is zero for resistance change equals zero. The same excitation and output sense wires can serve multiple transducers. More application arrangements are possible with constant current loop signal conditioning than with the Wheatstone bridge.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanaka, T.J.; Antonescu, C.

A program to assess the impact of smoke on digital instrumentation and control (I and C) safety systems began in 1994, funded by the US Nuclear Regulatory Commission Office of Research. Digital I and C safety systems are likely replacements for today`s analog systems. The nuclear industry has little experience in qualifying digital electronics for critical systems, part of which is understanding system performance during plant fires. The results of tests evaluating the performance of digital circuits and chip technologies exposed to the various smoke and humidity conditions representative of cable fires are discussed. Tests results show that low tomore » moderate smoke densities can cause intermittent failures of digital systems. Smoke increases leakage currents between biased contacts, leading to shorts. Chips with faster switching times, and thus higher output drive currents, are less sensitive to leakage currents and thus to smoke. Contact corrosion from acidic gases in smoke and inductance of stray capacitance are less important contributors to system upset. Transmission line coupling was increased because the smoke acted as a conductive layer between the lines. Permanent circuit damage was not obvious in the 24 hr of circuit monitoring. Test results also show that polyurethane, parylene, and acrylic conformal coatings are more effective in protecting against smoke than epoxy or silicone. Common-sense mitigation measures are discussed. Unfortunately the authors are a long way from standard tests for smoke exposure that capture the variations in smoke exposure possible in an actual fire.« less

Design of a digital multiradian phase detector and its application in fusion plasma interferometry.

PubMed

Mlynek, A; Schramm, G; Eixenberger, H; Sips, G; McCormick, K; Zilker, M; Behler, K; Eheberg, J

2010-03-01

We discuss the circuit design of a digital multiradian phase detector that measures the phase difference between two 10 kHz square wave TTL signals and provides the result as a binary number. The phase resolution of the circuit is 1/64 period and its dynamic range is 256 periods. This circuit has been developed for fusion plasma interferometry with submillimeter waves on the ASDEX Upgrade tokamak. The results from interferometric density measurement are discussed and compared to those obtained with the previously used phase detectors, especially with respect to the occurrence of phase jumps. It is illustrated that the new phase measurement provides a powerful tool for automatic real-time validation of the measured density, which is important for feedback algorithms that are sensitive to spurious density signals.

Automatic recloser circuit breaker integrated with GSM technology for power system notification

NASA Astrophysics Data System (ADS)

Lada, M. Y.; Khiar, M. S. A.; Ghani, S. A.; Nawawi, M. R. M.; Rahim, N. H.; Sinar, L. O. M.

2015-05-01

Lightning is one type of transient faults that usually cause the circuit breaker in the distribution board trip due to overload current detection. The instant tripping condition in the circuit breakers clears the fault in the system. Unfortunately most circuit breakers system is manually operated. The power line will be effectively re-energized after the clearing fault process is finished. Auto-reclose circuit is used on the transmission line to carry out the duty of supplying quality electrical power to customers. In this project, an automatic reclose circuit breaker for low voltage usage is designed. The product description is the Auto Reclose Circuit Breaker (ARCB) will trip if the current sensor detects high current which exceeds the rated current for the miniature circuit breaker (MCB) used. Then the fault condition will be cleared automatically and return the power line to normal condition. The Global System for Mobile Communication (GSM) system will send SMS to the person in charge if the tripping occurs. If the over current occurs in three times, the system will fully trip (open circuit) and at the same time will send an SMS to the person in charge. In this project a 1 A is set as the rated current and any current exceeding a 1 A will cause the system to trip or interrupted. This system also provides an additional notification for user such as the emergency light and warning system.

An iterative model for the steady state current distribution in oxide-confined vertical-cavity surface-emitting lasers (VCSELs)

NASA Astrophysics Data System (ADS)

Chuang, Hsueh-Hua

The purpose of this dissertation is to develop an iterative model for the analysis of the current distribution in vertical-cavity surface-emitting lasers (VCSELs) using a circuit network modeling approach. This iterative model divides the VCSEL structure into numerous annular elements and uses a circuit network consisting of resistors and diodes. The measured sheet resistance of the p-distributed Bragg reflector (DBR), the measured sheet resistance of the layers under the oxide layer, and two empirical adjustable parameters are used as inputs to the iterative model to determine the resistance of each resistor. The two empirical values are related to the anisotropy of the resistivity of the p-DBR structure. The spontaneous current, stimulated current, and surface recombination current are accounted for by the diodes. The lateral carrier transport in the quantum well region is analyzed using drift and diffusion currents. The optical gain is calculated as a function of wavelength and carrier density from fundamental principles. The predicted threshold current densities for these VCSELs match the experimentally measured current densities over the wavelength range of 0.83 mum to 0.86 mum with an error of less than 5%. This model includes the effects of the resistance of the p-DBR mirrors, the oxide current-confining layer and spatial hole burning. Our model shows that higher sheet resistance under the oxide layer reduces the threshold current, but also reduces the current range over which single transverse mode operation occurs. The spatial hole burning profile depends on the lateral drift and diffusion of carriers in the quantum wells but is dominated by the voltage drop across the p-DBR region. To my knowledge, for the first time, the drift current and the diffusion current are treated separately. Previous work uses an ambipolar approach, which underestimates the total charge transferred in the quantum well region, especially under the oxide region. However, the total result of the drift current and the diffusion current is less significant than the Ohmic current, especially in the cavity region. This simple iterative model is applied to commercially available oxide-confined VCSELs. The simulation results show excellent agreement with experimentally measured voltage-current curves (within 3.7% for a 10 mum and within 4% for a 5 mum diameter VCSEL) and light-current curves (within 2% for a 10 mum and within 9% for a 5 mum diameter VCSEL) curves and provides insight into the detailed distributions of current and voltage within a VCSEL. This difference between the theoretically calculated results and the measured results is less than the variation shown in the data sheets for production VCSELs.

Highly efficient lithium composite anode with hydrophobic molten salt in seawater

NASA Astrophysics Data System (ADS)

Zhang, Yancheng; Urquidi-Macdonald, Mirna

A lithium composite anode (lithium/1-butyl-3-methyl-imidazoleum hexafluorophosphate (BMI +PF 6-)/4-VLZ) for primary lithium/seawater semi-fuel-cells is proposed to reduce lithium-water parasitic reaction and, hence, increase the lithium anodic efficiency up to 100%. The lithium composite anode was activated when in contact with artificial seawater (3% NaCl solution) and the output was a stable anodic current density at 0.2 mA/cm 2, which lasted about 10 h under potentiostatic polarization at +0.5 V versus open circuit potential (OCP); the anodic efficiency was indirectly measured to be 100%. With time, a small traces of water diffused through the hydrophobic molten salt, BMI +PF 6-, reached the lithium interface and formed a double layer film (LiH/LiOH). Accordingly, the current density decreased and the anodic efficiency was estimated to be 90%. The hypothesis of small traces of water penetrating the molten salt and reaching the lithium anode—after several hours of operation—is supported by the collected experimental current density and hydrogen evolution, electrochemical impedance spectrum analysis, and non-mechanistic interface film modeling of lithium/BMI +PF 6-.

Can we estimate plasma density in ICP driver through electrical parameters in RF circuit?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bandyopadhyay, M., E-mail: mainak@iter-india.org; Sudhir, Dass, E-mail: dass.sudhir@iter-india.org; Chakraborty, A., E-mail: arunkc@iter-india.org

2015-04-08

To avoid regular maintenance, invasive plasma diagnostics with probes are not included in the inductively coupled plasma (ICP) based ITER Neutral Beam (NB) source design. Even non-invasive probes like optical emission spectroscopic diagnostics are also not included in the present ITER NB design due to overall system design and interface issues. As a result, negative ion beam current through the extraction system in the ITER NB negative ion source is the only measurement which indicates plasma condition inside the ion source. However, beam current not only depends on the plasma condition near the extraction region but also on the perveancemore » condition of the ion extractor system and negative ion stripping. Nevertheless, inductively coupled plasma production region (RF driver region) is placed at distance (∼ 30cm) from the extraction region. Due to that, some uncertainties are expected to be involved if one tries to link beam current with plasma properties inside the RF driver. Plasma characterization in source RF driver region is utmost necessary to maintain the optimum condition for source operation. In this paper, a method of plasma density estimation is described, based on density dependent plasma load calculation.« less

Capacitance-level/density monitor for fluidized-bed combustor

DOEpatents

Fasching, George E.; Utt, Carroll E.

1982-01-01

A multiple segment three-terminal type capacitance probe with segment selection, capacitance detection and compensation circuitry and read-out control for level/density measurements in a fluidized-bed vessel is provided. The probe is driven at a high excitation frequency of up to 50 kHz to sense quadrature (capacitive) current related to probe/vessel capacitance while being relatively insensitive to the resistance current component. Compensation circuitry is provided for generating a negative current of equal magnitude to cancel out only the resistive component current. Clock-operated control circuitry separately selects the probe segments in a predetermined order for detecting and storing this capacitance measurement. The selected segment acts as a guarded electrode and is connected to the read-out circuitry while all unselected segments are connected to the probe body, which together form the probe guard electrode. The selected probe segment capacitance component signal is directed to a corresponding segment channel sample and hold circuit dedicated to that segment to store the signal derived from that segment. This provides parallel outputs for display, computer input, etc., for the detected capacitance values. The rate of segment sampling may be varied to either monitor the dynamic density profile of the bed (high sampling rate) or monitor average bed characteristics (slower sampling rate).

High accuracy switched-current circuits using an improved dynamic mirror

NASA Technical Reports Server (NTRS)

Zweigle, G.; Fiez, T.

1991-01-01

The switched-current technique, a recently developed circuit approach to analog signal processing, has emerged as an alternative/compliment to the well established switched-capacitor circuit technique. High speed switched-current circuits offer potential cost and power savings over slower switched-capacitor circuits. Accuracy improvements are a primary concern at this stage in the development of the switched-current technique. Use of the dynamic current mirror has produced circuits that are insensitive to transistor matching errors. The dynamic current mirror has been limited by other sources of error including clock-feedthrough and voltage transient errors. In this paper we present an improved switched-current building block using the dynamic current mirror. Utilizing current feedback the errors due to current imbalance in the dynamic current mirror are reduced. Simulations indicate that this feedback can reduce total harmonic distortion by as much as 9 dB. Additionally, we have developed a clock-feedthrough reduction scheme for which simulations reveal a potential 10 dB total harmonic distortion improvement. The clock-feedthrough reduction scheme also significantly reduces offset errors and allows for cancellation with a constant current source. Experimental results confirm the simulated improvements.

Two new planar coil designs for a high pressure radio frequency plasma source

NASA Astrophysics Data System (ADS)

Munsat, T.; Hooke, W. M.; Bozeman, S. P.; Washburn, S.

1995-04-01

Two planar coil designs for a high pressure rf plasma source are investigated using spectroscopic techniques and circuit analysis. In an Ar plasma a truncated version of the commonly used ``spiral'' coil is found to produce improvements in peak electron density of 20% over the full version. A coil with figure-8 geometry is found to move plasma inhomogeneities off of center and produce electron densities comparable to the spiral coils. Both of these characteristics are advantageous in industrial applications. Coil design characteristics for favorable power coupling are also determined, including the necessity of closed hydrodynamic plasma loops and the drawback of closely situated antiparallel coil currents.

High-frequency resonant-tunneling oscillators

NASA Technical Reports Server (NTRS)

Brown, E. R.; Parker, C. D.; Calawa, A. R.; Manfra, M. J.; Chen, C. L.

1991-01-01

Advances in high-frequency resonant-tunneling-diode (RTD) oscillators are described. Oscillations up to a frequency of 420 GHz have been achieved in the GaAs/AlAs system. Recent results obtained with In0.53Ga0.47As/AlAs and InAs/AlSb RTDs show a greatly increased power density and indicate the potential for fundamental oscillations up to about 1 THz. These results are consistent with a lumped-element equivalent circuit model of the RTD. The model shows that the maximum oscillation frequency of the GaAs/AlAs RTDs is limited primarily by series resistance, and that the power density is limited by low peak-to-valley current ratio.

Investigation of Oxygen Reduction Activity of Catalysts Derived from Co and Co/Zn Methyl-Imidazolate Frameworks in Proton Exchange Membrane Fuel Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chong, Lina; Goenaga, Gabriel A.; Williams, Kia

We demonstrated that the oxygen reduction reaction (ORR) activity over the catalysts derived from pyrolyzed cobalt zeolitic imidazolate frameworks depends strongly on the imidazole ligand structure and cobalt content. The activity and durability of these catalysts were tested in the proton exchange membrane fuel cell for the first time. The membrane electrode assembly containing a catalyst derived from Co/Zn bimetallic ZIF at cathode achieved an open circuit voltage of 0.93 V, a current density of 28 mA cm-2 at 0.8 ViR-free and a peak power density of 374 mW cm-2.

GaAs VLSI technology and circuit elements for DSP

NASA Astrophysics Data System (ADS)

Mikkelson, James M.

1990-10-01

Recent progress in digital GaAs circuit performance and complexity is presented to demonstrate the current capabilities of GaAs components. High density GaAs process technology and circuit design techniques are described and critical issues for achieving favorable complexity speed power and cost tradeoffs are reviewed. Some DSP building blocks are described to provide examples of what types of DSP systems could be implemented with present GaAs technology. DIGITAL GaAs CIRCUIT CAPABILITIES In the past few years the capabilities of digital GaAs circuits have dramatically increased to the VLSI level. Major gains in circuit complexity and power-delay products have been achieved by the use of silicon-like process technologies and simple circuit topologies. The very high speed and low power consumption of digital GaAs VLSI circuits have made GaAs a desirable alternative to high performance silicon in hardware intensive high speed system applications. An example of the performance and integration complexity available with GaAs VLSI circuits is the 64x64 crosspoint switch shown in figure 1. This switch which is the most complex GaAs circuit currently available is designed on a 30 gate GaAs gate array. It operates at 200 MHz and dissipates only 8 watts of power. The reasons for increasing the level of integration of GaAs circuits are similar to the reasons for the continued increase of silicon circuit complexity. The market factors driving GaAs VLSI are system design methodology system cost power and reliability. System designers are hesitant or unwilling to go backwards to previous design techniques and lower levels of integration. A more highly integrated system in a lower performance technology can often approach the performance of a system in a higher performance technology at a lower level of integration. Higher levels of integration also lower the system component count which reduces the system cost size and power consumption while improving the system reliability. For large gate count circuits the power per gate must be minimized to prevent reliability and cooling problems. The technical factors which favor increasing GaAs circuit complexity are primarily related to reducing the speed and power penalties incurred when crossing chip boundaries. Because the internal GaAs chip logic levels are not compatible with standard silicon I/O levels input receivers and output drivers are needed to convert levels. These I/O circuits add significant delay to logic paths consume large amounts of power and use an appreciable portion of the die area. The effects of these I/O penalties can be reduced by increasing the ratio of core logic to I/O on a chip. DSP operations which have a large number of logic stages between the input and the output are ideal candidates to take advantage of the performance of GaAs digital circuits. Figure 2 is a schematic representation of the I/O penalties encountered when converting from ECL levels to GaAs

Sb2S3/Spiro-OMeTAD Inorganic-Organic Hybrid p-n Junction Diode for High Performance Self-Powered Photodetector.

PubMed

Bera, Ashok; Das Mahapatra, Ayon; Mondal, Sulakshana; Basak, Durga

2016-12-21

Organic-inorganic hybrid diodes are very promising for solution processing, low cost, high performance optoelectronic devices. Here, we report a high quality p-n heterojunction diode composed of n-type inorganic Sb 2 S 3 and p-type organic 2,2',7,7'-tetrakis-(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD) with a rectification ratio of ∼10 2 at an applied bias of 1 V. On illumination with visible light (470 nm, 1.82 mW/cm 2 ), the current value in our device becomes 8 × 10 2 times that of its dark value even at a zero bias condition. The estimated responsivity value at zero bias is 0.087 A/W which is so far the highest reported for any organic-inorganic hybrid photodiode, to the best of our knowledge. It also exhibits a fast photoresponse time of <25 ms (instrumental limit). More importantly, our device can also detect visible light with power density as low as 8 μW/cm 2 with a photocurrent density of 1.2 μA/cm 2 and a photocurrent to dark current ratio of more than 8. We also demonstrate that the values of responsivity, short circuit current, and open circuit voltage of the photodetector can be improved significantly using a thin layer of TiO 2 hole-blocking layer. These findings suggest Sb 2 S 3 /spiro-OMeTAD heterojuncton as a promising candidate for efficient self-powered low visible light photodetector.

Perovskite solar cell with an efficient TiO₂ compact film.

PubMed

Ke, Weijun; Fang, Guojia; Wang, Jing; Qin, Pingli; Tao, Hong; Lei, Hongwei; Liu, Qin; Dai, Xin; Zhao, Xingzhong

2014-09-24

A perovskite solar cell with a thin TiO2 compact film prepared by thermal oxidation of sputtered Ti film achieved a high efficiency of 15.07%. The thin TiO2 film prepared by thermal oxidation is very dense and inhibits the recombination process at the interface. The optimum thickness of the TiO2 compact film prepared by thermal oxidation is thinner than that prepared by spin-coating method. Also, the TiO2 compact film and the TiO2 porous film can be sintered at the same time. This one-step sintering process leads to a lower dark current density, a lower series resistance, and a higher recombination resistance than those of two-step sintering. Therefore, the perovskite solar cell with the TiO2 compact film prepared by thermal oxidation has a higher short-circuit current density and a higher fill factor.

Computer controlled performance mapping of thermionic converters: effect of collector, guard-ring potential imbalances on the observed collector current-density, voltage characteristics and limited range performance map of an etched-rhenium, niobium planar converter

NASA Technical Reports Server (NTRS)

Manista, E. J.

1972-01-01

The effect of collector, guard-ring potential imbalance on the observed collector-current-density J, collector-to-emitter voltage V characteristic was evaluated in a planar, fixed-space, guard-ringed thermionic converter. The J,V characteristic was swept in a period of 15 msec by a variable load. A computerized data acquisition system recorded test parameters. The results indicate minimal distortion of the J,V curve in the power output quadrant for the nominal guard-ring circuit configuration. Considerable distortion, along with a lowering of the ignited-mode striking voltage, was observed for the configuration with the emitter shorted to the guard ring. A limited-range performance map of an etched-rhenium, niobium, planar converter was obtained by using an improved computer program for the data acquisition system.

Electric Circuit Model Analogy for Equilibrium Lattice Relaxation in Semiconductor Heterostructures

NASA Astrophysics Data System (ADS)

Kujofsa, Tedi; Ayers, John E.

2018-01-01

The design and analysis of semiconductor strained-layer device structures require an understanding of the equilibrium profiles of strain and dislocations associated with mismatched epitaxy. Although it has been shown that the equilibrium configuration for a general semiconductor strained-layer structure may be found numerically by energy minimization using an appropriate partitioning of the structure into sublayers, such an approach is computationally intense and non-intuitive. We have therefore developed a simple electric circuit model approach for the equilibrium analysis of these structures. In it, each sublayer of an epitaxial stack may be represented by an analogous circuit configuration involving an independent current source, a resistor, an independent voltage source, and an ideal diode. A multilayered structure may be built up by the connection of the appropriate number of these building blocks, and the node voltages in the analogous electric circuit correspond to the equilibrium strains in the original epitaxial structure. This enables analysis using widely accessible circuit simulators, and an intuitive understanding of electric circuits can easily be extended to the relaxation of strained-layer structures. Furthermore, the electrical circuit model may be extended to continuously-graded epitaxial layers by considering the limit as the individual sublayer thicknesses are diminished to zero. In this paper, we describe the mathematical foundation of the electrical circuit model, demonstrate its application to several representative structures involving In x Ga1- x As strained layers on GaAs (001) substrates, and develop its extension to continuously-graded layers. This extension allows the development of analytical expressions for the strain, misfit dislocation density, critical layer thickness and widths of misfit dislocation free zones for a continuously-graded layer having an arbitrary compositional profile. It is similar to the transition from circuit theory, using lumped circuit elements, to electromagnetics, using distributed electrical quantities. We show this development using first principles, but, in a more general sense, Maxwell's equations of electromagnetics could be applied.

Ions beams and ferroelectric plasma sources

NASA Astrophysics Data System (ADS)

Stepanov, Anton

Near-perfect space-charge neutralization is required for the transverse compression of high perveance ion beams for ion-beam-driven warm dense matter experiments, such as the Neutralized Drift Compression eXperiment (NDCX). Neutralization can be accomplished by introducing a plasma in the beam path, which provides free electrons that compensate the positive space charge of the ion beam. In this thesis, charge neutralization of a 40 keV, perveance-dominated Ar+ beam by a Ferroelectric Plasma Source (FEPS) is investigated. First, the parameters of the ion beam, such as divergence due to the extraction optics, charge neutralization fraction, and emittance were measured. The ion beam was propagated through the FEPS plasma, and the effects of charge neutralization were inferred from time-resolved measurements of the transverse beam profile. In addition, the dependence of FEPS plasma parameters on the configuration of the driving pulser circuit was studied to optimize pulser design. An ion accelerator was constructed that produced a 30-50 keV Ar + beam with pulse duration <300 mus and dimensionless perveance Q up to 8 x 10-4. Transverse profile measurements 33 cm downstream of the ion source showed that the dependence of beam radius on Q was consistent with space charge expansion. It was concluded that the beam was perveance-dominated with a charge neutralization fraction of approximately zero in the absence of neutralizing plasma. Since beam expansion occurred primarily due to space charge, the decrease in effective perveance due to neutralization by FEPS plasma can be inferred from the reduction in beam radius. Results on propagation of the ion beam through FEPS plasma demonstrate that after the FEPS is triggered, the beam radius decreases to its neutralized value in about 5 mus. The duration of neutralization was about 10 mus at a charging voltage VFEPS = 5.5 kV and 35 mus at VFEPS = 6.5 kV. With VFEPS = 6.5 kV, the transverse current density profile 33 cm downstream of the source had a Gaussian shape with xrms =5 mm, which corresponds to a half-angle divergence of 0.87°. The measurements show that near-perfect charge neutralization with FEPS can be attained. No loss of ion beam current was detected, indicating the absence of a neutral cloud in the region of beam propagation, which would cause beam loss to charge exchange collisions. This provides evidence in favor of using FEPS in a future Heavy Ion Fusion accelerator. The FEPS discharge was investigated based on current-voltage measurements in the pulser circuit. Different values of series resistance and storage capacitance in the pulser circuit were used. The charged particle current emitted by the FEPS into vacuum was measured from the difference in forward and return currents in the driving circuit. It was found that FEPS is an emitter of negative charge, and that electron current emission begins approximately 0.5 mus after the fast-rising high voltage pulse is applied and lasts for tens of mus. The value of the series resistance in the pulser circuit was varied to change the rise time of the voltage pulse; plasma density was expected to decrease with increasing values of resistance. However, the data showed that changing the resistance had no significant effect. The average charge emitted per shot depends strongly on the value of the storage capacitance. Lowering the capacitance from 141 nF to 47 nF resulted in a near-complete shut-off of charge emission, although the amplitude of the applied voltage pulse was as high, and rise time as short, as when high-density plasma was produced. Increasing the capacitance from 141 nF to 235 nF increased the average charge emitted per shot by a factor of 2.

Differential biofilms characteristics of Shewanella decolorationis microbial fuel cells under open and closed circuit conditions.

PubMed

Yang, Yonggang; Sun, Guoping; Guo, Jun; Xu, Meiying

2011-07-01

Biofilms formation capacities of Shewanella species in microbial fuel cells (MFCs) and their roles in current generation have been documented to be species-dependent. Understandings of the biofilms growth and metabolism are essential to optimize the current generation of MFCs. Shewanella decolorationis S12 was used in both closed-circuit and open-circuit MFCs in this study. The anodic S. decolorationis S12 biofilms could generate fivefold more current than the planktonic cells, playing a dominant role in current generation. Anodic biofilms viability was sustained at 98 ± 1.2% in closed-circuit while biofilms viability in open-circuit decreased to 72 ± 7% within 96 h. The unviable domain in open-circuit MFCs biofilms majorly located at the inner layer of biofilm. The decreased biofilms viability in open-circuit MFCs could be recovered by switching into closed-circuit, indicating that the current-generating anode in MFCs could serve as a favorable electron acceptor and provide sufficient energy to support cell growth and metabolism inside biofilms. Copyright © 2011 Elsevier Ltd. All rights reserved.

Dual amplitude pulse generator for radiation detectors

DOEpatents

Hoggan, Jerry M.; Kynaston, Ronnie L.; Johnson, Larry O.

2001-01-01

A pulsing circuit for producing an output signal having a high amplitude pulse and a low amplitude pulse may comprise a current source for providing a high current signal and a low current signal. A gate circuit connected to the current source includes a trigger signal input that is responsive to a first trigger signal and a second trigger signal. The first trigger signal causes the gate circuit to connect the high current signal to a pulse output terminal whereas the second trigger signal causes the gate circuit to connect the low current signal to the pulse output terminal.

Electronic circuit for measuring series connected electrochemical cell voltages

DOEpatents

Ashtiani, Cyrus N.; Stuart, Thomas A.

2000-01-01

An electronic circuit for measuring voltage signals in an energy storage device is disclosed. The electronic circuit includes a plurality of energy storage cells forming the energy storage device. A voltage divider circuit is connected to at least one of the energy storage cells. A current regulating circuit is provided for regulating the current through the voltage divider circuit. A voltage measurement node is associated with the voltage divider circuit for producing a voltage signal which is proportional to the voltage across the energy storage cell.

Method of determining the open circuit voltage of a battery in a closed circuit

DOEpatents

Brown, William E.

1980-01-01

The open circuit voltage of a battery which is connected in a closed circuit is determined without breaking the circuit or causing voltage upsets therein. The closed circuit voltage across the battery and the current flowing through it are determined under normal load and then a fractional change is made in the load and the new current and voltage values determined. The open circuit voltage is then calculated, according to known principles, from the two sets of values.

30 CFR 75.601-3 - Short circuit protection; dual element fuses; current ratings; maximum values.

Code of Federal Regulations, 2010 CFR

2010-07-01

... Trailing Cables § 75.601-3 Short circuit protection; dual element fuses; current ratings; maximum values... circuit protection of trailing cables as provided in § 75.601, however, the current ratings of such...

Research of vibration control based on current mode piezoelectric shunt damping circuit

NASA Astrophysics Data System (ADS)

Liu, Weiwei; Mao, Qibo

2017-12-01

The piezoelectric shunt damping circuit using current mode approach is imposed to control the vibration of a cantilever beam. Firstly, the simulated inductance with large values are designed for the corresponding RL series shunt circuits. Moreover, with an example of cantilever beam, the second natural frequency of the beam is targeted to control for experiment. By adjusting the values of the equivalent inductance and equivalent resistance of the shunt circuit, the optimal damping of the shunt circuit is obtained. Meanwhile, the designed piezoelectric shunt damping circuit stability is experimental verified. Experimental results show that the proposed piezoelectric shunt damping circuit based on current mode circuit has good vibration control performance. However, the control performance will be reduced if equivalent inductance and equivalent resistance values deviate from optimal values.

MEMS cantilever based magnetic field gradient sensor

NASA Astrophysics Data System (ADS)

Dabsch, Alexander; Rosenberg, Christoph; Stifter, Michael; Keplinger, Franz

2017-05-01

This paper describes major contributions to a MEMS magnetic field gradient sensor. An H-shaped structure supported by four arms with two circuit paths on the surface is designed for measuring two components of the magnetic flux density and one component of the gradient. The structure is produced from silicon wafers by a dry etching process. The gold leads on the surface carry the alternating current which interacts with the magnetic field component perpendicular to the direction of the current. If the excitation frequency is near to a mechanical resonance, vibrations with an amplitude within the range of 1-103 nm are expected. Both theoretical (simulations and analytic calculations) and experimental analysis have been carried out to optimize the structures for different strength of the magnetic gradient. In the same way the impact of the coupling structure on the resonance frequency and of different operating modes to simultaneously measure two components of the flux density were tested. For measuring the local gradient of the flux density the structure was operated at the first symmetrical and the first anti-symmetrical mode. Depending on the design, flux densities of approximately 2.5 µT and gradients starting from 1 µT mm-1 can be measured.

Harvesting energy from the natural vibration of human walking.

PubMed

Yang, Weiqing; Chen, Jun; Zhu, Guang; Yang, Jin; Bai, Peng; Su, Yuanjie; Jing, Qingsheng; Cao, Xia; Wang, Zhong Lin

2013-12-23

The triboelectric nanogenerator (TENG), a unique technology for harvesting ambient mechanical energy based on the triboelectric effect, has been proven to be a cost-effective, simple, and robust approach for self-powered systems. However, a general challenge is that the output current is usually low. Here, we demonstrated a rationally designed TENG with integrated rhombic gridding, which greatly improved the total current output owing to the structurally multiplied unit cells connected in parallel. With the hybridization of both the contact-separation mode and sliding electrification mode among nanowire arrays and nanopores fabricated onto the surfaces of two contact plates, the newly designed TENG produces an open-circuit voltage up to 428 V, and a short-circuit current of 1.395 mA with the peak power density of 30.7 W/m(2). Relying on the TENG, a self-powered backpack was developed with a vibration-to-electric energy conversion efficiency up to 10.62(±1.19) %. And it was also demonstrated as a direct power source for instantaneously lighting 40 commercial light-emitting diodes by harvesting the vibration energy from natural human walking. The newly designed TENG can be a mobile power source for field engineers, explorers, and disaster-relief workers.

To probe the equivalence and opulence of nanocrystal and nanotube based dye-sensitized solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jyoti, Divya, E-mail: divyabathla17@gmail.com; Mohan, Devendra

2016-05-06

Dye-Sensitized solar cells based on TiO{sub 2} nanocrystal and TiO{sub 2} nanotubes have been fabricated by a simple sol-gel hydrothermal process and their performances have been compared. Current density and voltage (JV) characteristics and incident photon to current conversion efficiency (IPCE) plots have been set as criterion to check which one is better as a photoanode candidate in dye-sensitized solar cell. It has been observed that although open circuit voltage values for both type of cells do not differ much still, nanotube based dye-sensitized solar cells are more successful having an efficiency value of 7.28%.

Physically separating printed circuit boards with a resilient, conductive contact

NASA Technical Reports Server (NTRS)

Baker, John D. (Inventor); Montalvo, Alberto (Inventor)

1999-01-01

A multi-board module provides high density electronic packaging in which multiple printed circuit boards are stacked. Electrical power, or signals, are conducted between the boards through a resilient contact. One end of the contact is located at a via in the lower circuit board and soldered to a pad near the via. The top surface of the contact rests against a via of the facing printed circuit board.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Silva, E.R.C. da; Filho, B.J.C.

This paper presents a PWM current clamping circuit for improving a series resonant DC link converter. This circuit is capable of reducing current peaks to about 1.2--1.4 times the DC bias current. When desired, resonant transition creates notches in the dc link current, allowing the converter`s switches to synchronize with external PWM strategy. A regulated DC current source may be obtained--by using a conventional rectifier source--to feed a DC load or a current source inverter. Phase plane approach makes ease the understanding the operation, control and design procedure of the circuit. Another topology is derived and its features compared tomore » the first circuit. Simulation results for the simplified circuit and for a three-phase induction motor driven by such inverter will be presented. Moreover, the principle is corroborated by experimental results.« less

2D particle-in-cell simulation of the entire process of surface flashover on insulator in vacuum

NASA Astrophysics Data System (ADS)

Wang, Hongguang; Zhang, Jianwei; Li, Yongdong; Lin, Shu; Zhong, Pengfeng; Liu, Chunliang

2018-04-01

With the introduction of an external circuit model and a gas desorption model, the surface flashover on the plane insulator-vacuum interface perpendicular to parallel electrodes is simulated by a Particle-In-Cell method. It can be seen from simulations that when the secondary electron emission avalanche (SEEA) occurs, the current sharply increases because of the influence of the insulator surface charge on the cathode field emission. With the introduction of the gas desorption model, the current keeps on increasing after SEEA, and then the feedback of the external circuit causes the voltage between the two electrodes to decrease. The cathode emission current decreases, while the anode current keeps growing. With the definition that flashover occurs when the diode voltage drops by more than 20%, we obtained the simulated flashover voltage which agrees with the experimental value with the use of the field enhancement factor β = 145 and the gas molecule desorption coefficient γ=0.25 . From the simulation results, we can also see that the time delay of flashover decreases exponentially with voltage. In addition, from the gas desorption model, the gas density on the insulator surface is found to be proportional to the square of the gas desorption rate and linear with time.

Highly-Integrated CMOS Interface Circuits for SiPM-Based PET Imaging Systems.

PubMed

Dey, Samrat; Lewellen, Thomas K; Miyaoka, Robert S; Rudell, Jacques C

2012-01-01

Recent developments in the area of Positron Emission Tomography (PET) detectors using Silicon Photomultipliers (SiPMs) have demonstrated the feasibility of higher resolution PET scanners due to a significant reduction in the detector form factor. The increased detector density requires a proportionally larger number of channels to interface the SiPM array with the backend digital signal processing necessary for eventual image reconstruction. This work presents a CMOS ASIC design for signal reducing readout electronics in support of an 8×8 silicon photomultiplier array. The row/column/diagonal summation circuit significantly reduces the number of required channels, reducing the cost of subsequent digitizing electronics. Current amplifiers are used with a single input from each SiPM cathode. This approach helps to reduce the detector loading, while generating all the necessary row, column and diagonal addressing information. In addition, the single current amplifier used in our Pulse-Positioning architecture facilitates the extraction of pulse timing information. Other components under design at present include a current-mode comparator which enables threshold detection for dark noise current reduction, a transimpedance amplifier and a variable output impedance I/O driver which adapts to a wide range of loading conditions between the ASIC and lines with the off-chip Analog-to-Digital Converters (ADCs).

Highly-Integrated CMOS Interface Circuits for SiPM-Based PET Imaging Systems

PubMed Central

Dey, Samrat; Lewellen, Thomas K.; Miyaoka, Robert S.; Rudell, Jacques C.

2013-01-01

Recent developments in the area of Positron Emission Tomography (PET) detectors using Silicon Photomultipliers (SiPMs) have demonstrated the feasibility of higher resolution PET scanners due to a significant reduction in the detector form factor. The increased detector density requires a proportionally larger number of channels to interface the SiPM array with the backend digital signal processing necessary for eventual image reconstruction. This work presents a CMOS ASIC design for signal reducing readout electronics in support of an 8×8 silicon photomultiplier array. The row/column/diagonal summation circuit significantly reduces the number of required channels, reducing the cost of subsequent digitizing electronics. Current amplifiers are used with a single input from each SiPM cathode. This approach helps to reduce the detector loading, while generating all the necessary row, column and diagonal addressing information. In addition, the single current amplifier used in our Pulse-Positioning architecture facilitates the extraction of pulse timing information. Other components under design at present include a current-mode comparator which enables threshold detection for dark noise current reduction, a transimpedance amplifier and a variable output impedance I/O driver which adapts to a wide range of loading conditions between the ASIC and lines with the off-chip Analog-to-Digital Converters (ADCs). PMID:24301987

Electromagnetic Properties Analysis on Hybrid-driven System of Electromagnetic Motor

NASA Astrophysics Data System (ADS)

Zhao, Jingbo; Han, Bingyuan; Bei, Shaoyi

2018-01-01

The hybrid-driven system made of permanent-and electromagnets applied in the electromagnetic motor was analyzed, equivalent magnetic circuit was used to establish the mathematical models of hybrid-driven system, based on the models of hybrid-driven system, the air gap flux, air-gap magnetic flux density, electromagnetic force was proposed. Taking the air-gap magnetic flux density and electromagnetic force as main research object, the hybrid-driven system was researched. Electromagnetic properties of hybrid-driven system with different working current modes is studied preliminary. The results shown that analysis based on hybrid-driven system can improve the air-gap magnetic flux density and electromagnetic force more effectively and can also guarantee the output stability, the effectiveness and feasibility of the hybrid-driven system are verified, which proved theoretical basis for the design of hybrid-driven system.

Dopamine-Modulated Recurrent Corticoefferent Feedback in Primary Sensory Cortex Promotes Detection of Behaviorally Relevant Stimuli

PubMed Central

Handschuh, Juliane

2014-01-01

Dopaminergic neurotransmission in primary auditory cortex (AI) has been shown to be involved in learning and memory functions. Moreover, dopaminergic projections and D1/D5 receptor distributions display a layer-dependent organization, suggesting specific functions in the cortical circuitry. However, the circuit effects of dopaminergic neurotransmission in sensory cortex and their possible roles in perception, learning, and memory are largely unknown. Here, we investigated layer-specific circuit effects of dopaminergic neuromodulation using current source density (CSD) analysis in AI of Mongolian gerbils. Pharmacological stimulation of D1/D5 receptors increased auditory-evoked synaptic currents in infragranular layers, prolonging local thalamocortical input via positive feedback between infragranular output and granular input. Subsequently, dopamine promoted sustained cortical activation by prolonged recruitment of long-range corticocortical networks. A detailed circuit analysis combining layer-specific intracortical microstimulation (ICMS), CSD analysis, and pharmacological cortical silencing revealed that cross-laminar feedback enhanced by dopamine relied on a positive, fast-acting recurrent corticoefferent loop, most likely relayed via local thalamic circuits. Behavioral signal detection analysis further showed that activation of corticoefferent output by infragranular ICMS, which mimicked auditory activation under dopaminergic influence, was most effective in eliciting a behaviorally detectable signal. Our results show that D1/D5-mediated dopaminergic modulation in sensory cortex regulates positive recurrent corticoefferent feedback, which enhances states of high, persistent activity in sensory cortex evoked by behaviorally relevant stimuli. In boosting horizontal network interactions, this potentially promotes the readout of task-related information from cortical synapses and improves behavioral stimulus detection. PMID:24453315

The high voltage homopolar generator

NASA Astrophysics Data System (ADS)

Price, J. H.; Gully, J. H.; Driga, M. D.

1986-11-01

System and component design features of proposed high voltage homopolar generator (HVHPG) are described. The system is to have an open circuit voltage of 500 V, a peak output current of 500 kA, 3.25 MJ of stored inertial energy and possess an average magnetic-flux density of 5 T. Stator assembly components are discussed, including the stator, mount structure, hydrostatic bearings, main and motoring brushgears and rotor. Planned operational procedures such as monitoring the rotor to full speed and operation with a superconducting field coil are delineated.

Tailoring perovskite compounds for broadband light absorption

NASA Astrophysics Data System (ADS)

Lu, Hengchang; Guo, Xiaowei; Yang, Cheng; Li, Shaorong

2018-01-01

Perovskite solar cells have experienced an outstanding advance in power conversion efficiency (PCE) by optimizing the perovskite layer morphology, composition, interfaces, and charge collection efficiency. To enhance PCE, the mixed perovskites were proposed in recent years. In this study, optoelectronic performance of pure perovskites and mixed ones were investigated. It was demonstrated that the mixed perovskites exhibit superior to the pure ones. The mixed material can absorb broadband light absorption and result in increased short circuit current density and power conversion efficiency.

Nanographite-TiO2 photoanode for dye sensitized solar cells

NASA Astrophysics Data System (ADS)

Sharma, S. S.; Sharma, Khushboo; Sharma, Vinay

2016-05-01

Nanographite-TiO2 (NG-TiO2) composite was successfully synthesized by the hydrothermal method and its performance as the photoanode for dye-sensitized solar cells (DSSCs) was investigated. Environmental Scanning electron microscope (E-SEM) micrographs show the uniform distribution of TiO2 nanoflowers deposited over nanographite sheets. The average performance characteristics of the assembled cell in terms of short-ciruit current density (JSC), open circuit voltage (VOC), fill factor (FF) and photoelectric conversion efficiency (η) were measured.

The photovoltaic properties of an Al In As/InP heterojunctions grown by LPE method. Final technical report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, E.Y.

1989-10-01

Work is presented on heterojunction solar cells which were studied under the NASA/Arizona State University intern program. The heterojunction solar cells were fabricated by the liquid phase epitaxy method. The basic conversion efficiency was measured at 5 percent. It was determined that a thicker epilayer is needed, and that the density of recombination center should be reduced to give a smaller saturation current and hence a larger open-circuit voltage.

High-efficiency AlGaAs-GaAs Cassegrainian concentrator cells

NASA Technical Reports Server (NTRS)

Werthen, J. G.; Hamaker, H. C.; Virshup, G. F.; Lewis, C. R.; Ford, C. W.

1985-01-01

AlGaAs-GaAs heteroface space concentrator solar cells have been fabricated by metalorganic chemical vapor deposition. AMO efficiencies as high as 21.1% have been observed both for p-n and np structures under concentration (90 to 100X) at 25 C. Both cell structures are characterized by high quantum efficiencies and their performances are close to those predicted by a realistic computer model. In agreement with the computer model, the n-p cell exhibits a higher short-circuit current density.

PEDOT as a Flexible Organic Electrode for a Thin Film Acoustic Energy Harvester.

PubMed

Kim, Younghoon; Na, Jongbeom; Park, Chihyun; Shin, Haijin; Kim, Eunkyoung

2015-08-05

An efficient thin film acoustic energy harvester was explored using flexible poly(3,4-ethylene dioxythiophene) (PEDOT) films as electrodes in an all-organic triboelectric generator (AO-TEG). A thin film AO-TEG structured as PEDOT/Kapton//PET/PEDOT was prepared by the solution casting polymerization(SCP) on the dielectric polymer films. As-prepared AO-TEG showed high flexibility and durability due to the strong adhesion between the electrodes and the dielectric polymer. The short-circuit current density (Jsc), open-circuit voltage (Voc), and maximum power density (Pw) reached 50 mA/m(2), 700 V, and 12.9 W/m(2) respectively. The output current density decreased with the increase in the electrode resistance (Re), but the energy loss in the organic electrodes was negligible. The AO-TEG could light up 180 LEDs instantaneously upon touching of the AO-TEG with a palm (∼120 N). With the flexible structure, the AO-TEG was worn as clothes and generated electricity to light LEDs upon regular human movement. Furthermore, the AO-TEG was applicable as a thin film acoustic energy harvester, which used music to generate electricity enough for powering of 5 LEDs. An AO-TEG with a PEDOT electrode (Re = 200 Ω) showed instantaneous peak-to-peak voltage generation of 11 V under a sound pressure level (SPL) of 90-100 dB. The harvested acoustic energy through the AO-TEG was 350 μJ from the 4 min playing of the same single song. This is the first demonstration of a flexible triboelectric generator (TEG) using an organic electrode for harvesting acoustic energy from ambient environment.

Power-Switching Circuit

NASA Technical Reports Server (NTRS)

Praver, Gerald A.; Theisinger, Peter C.; Genofsky, John

1987-01-01

Functions of circuit breakers, meters, and switches combined. Circuit that includes power field-effect transistors (PFET's) provides on/off switching, soft starting, current monitoring, current tripping, and protection against overcurrent for 30-Vdc power supply at normal load currents up to 2 A. Has no moving parts.

Starting Circuit For Erasable Programmable Logic Device

NASA Technical Reports Server (NTRS)

Cole, Steven W.

1990-01-01

Voltage regulator bypassed to supply starting current. Starting or "pullup" circuit supplies large inrush of current required by erasable programmable logic device (EPLD) while being turned on. Operates only during such intervals of high demand for current and has little effect any other time. Performs needed bypass, acting as current-dependent shunt connecting battery or other source of power more nearly directly to EPLD. Input capacitor of regulator removed when starting circuit installed, reducing probability of damage to transistor in event of short circuit in or across load.

Design of Low-Complexity and High-Speed Coplanar Four-Bit Ripple Carry Adder in QCA Technology

NASA Astrophysics Data System (ADS)

Balali, Moslem; Rezai, Abdalhossein

2018-07-01

Quantum-dot Cellular Automata (QCA) technology is a suitable technology to replace CMOS technology due to low-power consumption, high-speed and high-density devices. Full adder has an important role in the digital circuit design. This paper presents and evaluates a novel single-layer four-bit QCA Ripple Carry Adder (RCA) circuit. The developed four-bit QCA RCA circuit is based on novel QCA full adder circuit. The developed circuits are simulated using QCADesigner tool version 2.0.3. The simulation results show that the developed circuits have advantages in comparison with existing single-layer and multilayer circuits in terms of cell count, area occupation and circuit latency.

Design of Low-Complexity and High-Speed Coplanar Four-Bit Ripple Carry Adder in QCA Technology

NASA Astrophysics Data System (ADS)

Balali, Moslem; Rezai, Abdalhossein

2018-03-01

Quantum-dot Cellular Automata (QCA) technology is a suitable technology to replace CMOS technology due to low-power consumption, high-speed and high-density devices. Full adder has an important role in the digital circuit design. This paper presents and evaluates a novel single-layer four-bit QCA Ripple Carry Adder (RCA) circuit. The developed four-bit QCA RCA circuit is based on novel QCA full adder circuit. The developed circuits are simulated using QCADesigner tool version 2.0.3. The simulation results show that the developed circuits have advantages in comparison with existing single-layer and multilayer circuits in terms of cell count, area occupation and circuit latency.

The Relationship between the Current Waveform just before the Current Zero and the Interruption Ability in the High-speed VCB

NASA Astrophysics Data System (ADS)

Niwa, Yoshimitsu; Matsuzaki, Jun; Yokokura, Kunio

The high-speed vacuum circuit breaker, which forced the fault current to zero was investigated. The test circuit breaker consisted of a vacuum interrupter and a high frequency current source. The vacuum interrupter, which had the axial magnetic field electrode and the disk shape electrode, was tested. The arcing period of the high-speed vacuum circuit breaker is much shorter than that of conventional circuit breaker. The arc behavior of the test electrodes immediately after the contact separation was observed by a high-speed video camcorder. The relation between the current waveform just before the current zero and the interruption ability by varying the high frequency current source was investigated experimentally. The results demonstrate the interruption ability and the arc behavior of the high-speed vacuum circuit breaker. The high current interruption was made possible by the low current period just before the current zero, although the arcing time is short and the arc is concentrated.

Low phase noise oscillator using two parallel connected amplifiers

NASA Technical Reports Server (NTRS)

Kleinberg, Leonard L.

1987-01-01

A high frequency oscillator is provided by connecting two amplifier circuits in parallel where each amplifier circuit provides the other amplifier circuit with the conditions necessary for oscillation. The inherent noise present in both amplifier circuits causes the quiescent current, and in turn, the generated frequency, to change. The changes in quiescent current cause the transconductance and the load impedance of each amplifier circuit to vary, and this in turn results in opposing changes in the input susceptance of each amplifier circuit. Because the changes in input susceptance oppose each other, the changes in quiescent current also oppose each other. The net result is that frequency stability is enhanced.

Voltage and power relationships in lithium-containing solar cells.

NASA Technical Reports Server (NTRS)

Faith, T. J.

1972-01-01

Photovoltaic characteristics have been measured on a large number of crucible-grown lithium-containing solar cells irradiated by 1-MeV electrons to fluences ranging from 3 x 10 to the 13th power to 3 x 10 to the 15th power electrons per sq cm. These measurements have established empirical relationships between cell photovoltaic parameters and lithium donor density gradient. Short-circuit current and maximum power measured immediately after irradiation decrease logarithmically with lithium gradient. Open-circuit voltage increases logarithmically with lithium gradient both immediately after irradiation and after recovery, the degree of recovery being strongly gradient-dependent at high fluence. As a result, the maximum power and the power at 0.43 V after recovery from 3 x 10 to the 15th power electrons per sq cm increase with increasing lithium gradient.

Fabrication of PbS quantum dots and their applications in solar cells based on ZnO nanorod arrays

NASA Astrophysics Data System (ADS)

Kumar, Dinesh; Chaudhary, Sujeet; Pandya, Dinesh K.

2018-05-01

An efficient, inexpensive and large area scalable approach based on sol-gel technique is presented to fabricate quantum dots (QDs) of PbS. Size of the QDs is tuned by the varying the bath concentrations in the range of 50-200 mM. Transmission electron microscopy (TEM) studies confirm the growth of spherically shaped ˜5.6 nm QDs at 50 mM bath concentration. The optical bandgap of the QDs is found to be ˜0.9 eV and corresponds to the size obtained from TEM studies. ZnO/PbS solar cells are fabricated by sensitizing the ZnO nanorods with PbS QDs. The fabricated solar cells demonstrate the highest open circuit voltage ˜200 mV and short circuit current density ˜0.81 µA/cm2.

Titanium-containing zeolites and microporous molecular sieves as photovoltaic solar cells.

PubMed

Atienzar, Pedro; Valencia, Susana; Corma, Avelino; García, Hermenegildo

2007-05-14

Four titanium-containing zeolites and microporous molecular sieves differing on the crystal structure and particle size (Ti/Beta, Ti/Beta-60, TS-1 and ETS-10) are prepared, and their activity for solar cells after incorporating N3 (a commercially available ruthenium polypyridyl dye) is tested. All the zeolites exhibit photovoltaic activity, and the photoresponse is quite independent of the zeolite pore dimensions or particle size. The photoresponse increases with titanium content in the range 1-7% wt. In this way, cells are obtained that have open-circuit voltage Voc=560 mV and maximum short-circuit photocurrent density Isc=100 microA, measured for 1x1 cm2 surfaces with a solar simulator at 1000 W through and AM 1.5 filter. These values are promising and comparable to those obtained for current dye-sensitized titania solar cells.

Effect of ZnO:Cs2CO3 on the performance of organic photovoltaics

PubMed Central

2014-01-01

We demonstrate a new solution-processed electron transport layer (ETL), zinc oxide doped with cesium carbonate (ZnO:Cs2CO3), for achieving organic photovoltaics (OPVs) with good operational stability at ambient air. An OPV employing the ZnO:Cs2CO3 ETL exhibits a fill factor of 62%, an open circuit voltage of 0.90 V, and a short circuit current density of −6.14 mA/cm2 along with 3.43% power conversion efficiency. The device demonstrated air stability for a period over 4 weeks. In addition, we also studied the device structure dependence on the performance of organic photovoltaics. Thus, we conclude that ZnO:Cs2CO3 ETL could be employed in a suitable architecture to achieve high-performance OPV. PMID:25045340

Non-linear lumped model circuit of capacitively coupled plasmas at the intermediate radio-frequencies

NASA Astrophysics Data System (ADS)

Shihab, Mohammed

2018-06-01

The discharge dynamics in geometrically asymmetric capacitively coupled plasmas are investigated via a lumped model circuit. A realistic reactor configuration is assumed. A single and two separate RF voltage sources are considered. One of the driven frequencies (the higher frequency) has been adjusted to excite a plasma series resonance, while the second frequency (the lower frequency) is in the range of the ion plasma frequency. Increasing the plasma pressure in the low pressure regime (≤ 100mTorr) is found to diminish the amplitude of the self-excited harmonics of the discharge current, however, the net result is enhancing the plasma heating. The modulation of the ion density with the lower driving frequency affect the plasma heating considerably. The net effect depends on the amplitude and the phase of the ion modulation.

Performance Enhancement of Polymer Solar Cells by Using Two Polymer Donors with Complementary Absorption Spectra.

PubMed

Lu, Heng; Zhang, Xuejuan; Li, Cuihong; Wei, Hedi; Liu, Qian; Li, Weiwei; Bo, Zhishan

2015-07-01

Performance enhancement of polymer solar cells (PSCs) is achieved by expanding the absorption of the active layer of devices. To better match the spectrum of solar radiation, two polymers with different band gaps are used as the donor material to fabricate ternary polymer cells. Ternary blend PSCs exhibit an enhanced short-circuit current density and open-circuit voltage in comparison with the corresponding HD-PDFC-DTBT (HD)- and DT-PDPPTPT (DPP)-based binary polymer solar cells, respectively. Ternary PSCs show a power conversion efficiency (PCE) of 6.71%, surpassing the corresponding binary PSCs. This work demonstrates that the fabrication of ternary PSCs by using two polymers with complementary absorption is an effective way to improve the device performance. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Commutation circuit for an HVDC circuit breaker

DOEpatents

Premerlani, William J.

1981-01-01

A commutation circuit for a high voltage DC circuit breaker incorporates a resistor capacitor combination and a charging circuit connected to the main breaker, such that a commutating capacitor is discharged in opposition to the load current to force the current in an arc after breaker opening to zero to facilitate arc interruption. In a particular embodiment, a normally open commutating circuit is connected across the contacts of a main DC circuit breaker to absorb the inductive system energy trapped by breaker opening and to limit recovery voltages to a level tolerable by the commutating circuit components.

Commutation circuit for an HVDC circuit breaker

DOEpatents

Premerlani, W.J.

1981-11-10

A commutation circuit for a high voltage DC circuit breaker incorporates a resistor capacitor combination and a charging circuit connected to the main breaker, such that a commutating capacitor is discharged in opposition to the load current to force the current in an arc after breaker opening to zero to facilitate arc interruption. In a particular embodiment, a normally open commutating circuit is connected across the contacts of a main DC circuit breaker to absorb the inductive system energy trapped by breaker opening and to limit recovery voltages to a level tolerable by the commutating circuit components. 13 figs.

Circuit protects regulated power supply against overload current

NASA Technical Reports Server (NTRS)

Airth, H. B.

1966-01-01

Sensing circuit in which a tunnel diode controls a series regulator transistor protects a low voltage transistorized dc regulator from damage by excessive load currents. When a fault occurs, the faulty circuit is limited to a preset percentage of the current when limiting first occurs.

Design and optimization of LCL-VSC grid-tied converter having short circuit fault current limiting ability

NASA Astrophysics Data System (ADS)

Liu, Mengqi; Liu, Haijun; Wang, Zhikai

2017-01-01

Traditional LCL grid-tied converters haven't the ability to limit the short-circuit fault current and only remove grid-connected converter using the breaker. However, the VSC converters become uncontrollable after the short circuit fault cutting off and the power switches may be damaged if the circuit breaker removes slowly. Compared to the filter function of the LCL passive components in traditional VSC converters, the novel LCL-VSC converter has the ability of limiting the short circuit fault current using the reasonable designed LCL parameters. In this paper the mathematical model of the LCL converter is established and the characteristics of the short circuit fault current generated by the ac side and dc side are analyzed. Thus one design and optimization scheme of the reasonable LCL passive parameter is proposed for the LCL-VSC converter having short circuit fault current limiting ability. In addition to ensuring the LCL passive components filtering the high-frequency harmonic, this scheme also considers the impedance characteristics to limit the fault current of AC and DC short circuit fault respectively flowing through the power switch no more than the maximum allowable operating current, in order to make the LCL converter working continuously. Finally, the 200kW simulation system is set up to prove the validity and feasibility of the theoretical analysis using the proposed design and optimization scheme.

Enhancing light absorption within the carrier transport length in quantum junction solar cells.

PubMed

Fu, Yulan; Hara, Yukihiro; Miller, Christopher W; Lopez, Rene

2015-09-10

Colloidal quantum dot (CQD) solar cells have attracted tremendous attention because of their tunable absorption spectrum window and potentially low processing cost. Recently reported quantum junction solar cells represent a promising approach to building a rectifying photovoltaic device that employs CQD layers on each side of the p-n junction. However, the ultimate efficiency of CQD solar cells is still highly limited by their high trap state density in both p- and n-type CQDs. By modeling photonic structures to enhance the light absorption within the carrier transport length and by ensuring that the carrier generation and collection efficiencies were both augmented, our work shows that overall device current density could be improved. We utilized a two-dimensional numerical model to calculate the characteristics of patterned CQD solar cells based on a simple grating structure. Our calculation predicts a short circuit current density as high as 31  mA/cm², a value nearly 1.5 times larger than that of the conventional flat design, showing the great potential value of patterned quantum junction solar cells.

High density printed electrical circuit board card connection system

DOEpatents

Baumbaugh, Alan E.

1997-01-01

A zero insertion/extraction force printed circuit board card connection system comprises a cam-operated locking mechanism disposed along an edge portion of the printed circuit board. The extrusions along the circuit board mate with an extrusion fixed to the card cage having a plurality of electrical connectors. The card connection system allows the connectors to be held away from the circuit board during insertion/extraction and provides a constant mating force once the circuit board is positioned. The card connection system provides a simple solution to the need for a greater number of electrical signal connections.

Aircraft measurements of the atmospheric electrical global circuit during the period 1971-1984

NASA Technical Reports Server (NTRS)

Markson, R.

1985-01-01

This report will update an investigation of the global circuit conducted over the last 14 years through aircraft measurements of the variation of ionospheric potential and associated parameters. The data base included electric field, conductivity, and air-earth current density profiles from the tropics (25 deg N) to the Arctic (79 deg N). Almost all of the data have been obtained over the ocean to reduce noise associated with local generators, aerosols, and convection. Recently, two aircraft have been utilized to obtain, for the first time, quasi-periodic sets of simultaneous ionospheric potential (VI) soundings at remote locations and extending over time spans sufficiently long so that the universal time diurnal variation (Carnegie curve) could be observed. In additon, these measurements provided the first detection of the modulation of electric fields in the troposphere caused by the double vortex ionospheric convection pattern. Besides summarizing these measurements and comparing them to similar data obtained by other groups, this report discusses meteorological sources of error and criteria for determining if the global circuit is being measured rather than variations caused by local meteorological processes.

Experimental diagnostics and modeling of inductive phenomena at low frequencies in impedance spectra of proton exchange membrane fuel cells

NASA Astrophysics Data System (ADS)

Pivac, Ivan; Šimić, Boris; Barbir, Frano

2017-10-01

Representation of fuel cell processes by equivalent circuit models, involving resistance and capacitance elements representing activation losses on both anode and cathode in series with resistance representing ohmic losses, cannot capture and explain the inductive loop that may show up at low frequencies in Nyquist diagram representation of the electrochemical impedance spectra. In an attempt to explain the cause of the low-frequency inductive loop and correlate it with the processes within the fuel cell electrodes, a novel equivalent circuit model of a Proton Exchange Membrane (PEM) fuel cell has been proposed and experimentally verified here in detail. The model takes into account both the anode and the cathode, and has an additional resonant loop on each side, comprising of a resistance, capacitance and inductance in parallel representing the processes within the catalyst layer. Using these additional circuit elements, more accurate and better fits to experimental impedance data in the wide frequency range at different current densities, cell temperatures, humidity of gases, air flow stoichiometries and backpressures were obtained.

Simple constant-current-regulated power supply

NASA Technical Reports Server (NTRS)

Priebe, D. H. E.; Sturman, J. C.

1977-01-01

Supply incorporates soft-start circuit that slowly ramps current up to set point at turn-on. Supply consists of full-wave rectifier, regulating pass transistor, current feedback circuit, and quad single-supply operational-amplifier circuit providing control. Technique is applicable to any system requiring constant dc current, such as vacuum tube equipment, heaters, or battery charges; it has been used to supply constant current for instrument calibration.

Alternative model of space-charge-limited thermionic current flow through a plasma

NASA Astrophysics Data System (ADS)

Campanell, M. D.

2018-04-01

It is widely assumed that thermionic current flow through a plasma is limited by a "space-charge-limited" (SCL) cathode sheath that consumes the hot cathode's negative bias and accelerates upstream ions into the cathode. Here, we formulate a fundamentally different current-limited mode. In the "inverse" mode, the potentials of both electrodes are above the plasma potential, so that the plasma ions are confined. The bias is consumed by the anode sheath. There is no potential gradient in the neutral plasma region from resistivity or presheath. The inverse cathode sheath pulls some thermoelectrons back to the cathode, thereby limiting the circuit current. Thermoelectrons entering the zero-field plasma region that undergo collisions may also be sent back to the cathode, further attenuating the circuit current. In planar geometry, the plasma density is shown to vary linearly across the electrode gap. A continuum kinetic planar plasma diode simulation model is set up to compare the properties of current modes with classical, conventional SCL, and inverse cathode sheaths. SCL modes can exist only if charge-exchange collisions are turned off in the potential well of the virtual cathode to prevent ion trapping. With the collisions, the current-limited equilibrium must be inverse. Inverse operating modes should therefore be present or possible in many plasma devices that rely on hot cathodes. Evidence from past experiments is discussed. The inverse mode may offer opportunities to minimize sputtering and power consumption that were not previously explored due to the common assumption of SCL sheaths.

High-Performance CH3NH3PbI3-Inverted Planar Perovskite Solar Cells with Fill Factor Over 83% via Excess Organic/Inorganic Halide.

PubMed

Jahandar, Muhammad; Khan, Nasir; Lee, Hang Ken; Lee, Sang Kyu; Shin, Won Suk; Lee, Jong-Cheol; Song, Chang Eun; Moon, Sang-Jin

2017-10-18

The reduction of charge carrier recombination and intrinsic defect density in organic-inorganic halide perovskite absorber materials is a prerequisite to achieving high-performance perovskite solar cells with good efficiency and stability. Here, we fabricated inverted planar perovskite solar cells by incorporation of a small amount of excess organic/inorganic halide (methylammonium iodide (CH 3 NH 3 I; MAI), formamidinium iodide (CH(NH 2 ) 2 I; FAI), and cesium iodide (CsI)) in CH 3 NH 3 PbI 3 perovskite film. Larger crystalline grains and enhanced crystallinity in CH 3 NH 3 PbI 3 perovskite films with excess organic/inorganic halide reduce the charge carrier recombination and defect density, leading to enhanced device efficiency (MAI+: 14.49 ± 0.30%, FAI+: 16.22 ± 0.38% and CsI+: 17.52 ± 0.56%) compared to the efficiency of a control MAPbI 3 device (MAI: 12.63 ± 0.64%) and device stability. Especially, the incorporation of a small amount of excess CsI in MAPbI 3 perovskite film leads to a highly reproducible fill factor of over 83%, increased open-circuit voltage (from 0.946 to 1.042 V), and short-circuit current density (from 18.43 to 20.89 mA/cm 2 ).

Commutating Permanent-Magnet Motors At Low Speed

NASA Technical Reports Server (NTRS)

Dolland, C.

1985-01-01

Circuit provides forced commutation during starting. Forced commutation circuit diverts current from inverter SCR's and turns SCR's off during commutation intervals. Silicon controlled rectifier in circuit unnecessary when switch S10 replaced by high-current, high-voltage transistor. At present, high-current, low-voltage device must suffice.

30 CFR 75.824 - Electrical protection.

Code of Federal Regulations, 2010 CFR

2010-07-01

... transformer and over-current relay in the neutral grounding resistor circuit. (vi) A single window-type current transformer that encircles all three-phase conductors must be used to activate the ground-fault... current transformer. (vii) A test circuit for the ground-fault device must be provided. The test circuit...

30 CFR 75.824 - Electrical protection.

Code of Federal Regulations, 2012 CFR

2012-07-01

... transformer and over-current relay in the neutral grounding resistor circuit. (vi) A single window-type current transformer that encircles all three-phase conductors must be used to activate the ground-fault... current transformer. (vii) A test circuit for the ground-fault device must be provided. The test circuit...

30 CFR 75.824 - Electrical protection.

Code of Federal Regulations, 2014 CFR

2014-07-01

... transformer and over-current relay in the neutral grounding resistor circuit. (vi) A single window-type current transformer that encircles all three-phase conductors must be used to activate the ground-fault... current transformer. (vii) A test circuit for the ground-fault device must be provided. The test circuit...

30 CFR 75.824 - Electrical protection.

Code of Federal Regulations, 2011 CFR

2011-07-01

... transformer and over-current relay in the neutral grounding resistor circuit. (vi) A single window-type current transformer that encircles all three-phase conductors must be used to activate the ground-fault... current transformer. (vii) A test circuit for the ground-fault device must be provided. The test circuit...

30 CFR 75.824 - Electrical protection.

Code of Federal Regulations, 2013 CFR

2013-07-01

... transformer and over-current relay in the neutral grounding resistor circuit. (vi) A single window-type current transformer that encircles all three-phase conductors must be used to activate the ground-fault... current transformer. (vii) A test circuit for the ground-fault device must be provided. The test circuit...

Silicon photonics integrated circuits: a manufacturing platform for high density, low power optical I/O's.

PubMed

Absil, Philippe P; Verheyen, Peter; De Heyn, Peter; Pantouvaki, Marianna; Lepage, Guy; De Coster, Jeroen; Van Campenhout, Joris

2015-04-06

Silicon photonics integrated circuits are considered to enable future computing systems with optical input-outputs co-packaged with CMOS chips to circumvent the limitations of electrical interfaces. In this paper we present the recent progress made to enable dense multiplexing by exploiting the integration advantage of silicon photonics integrated circuits. We also discuss the manufacturability of such circuits, a key factor for a wide adoption of this technology.

Investigation of disorder and its effect on electrical transport in electrochemically doped polymer devices by current-voltage and impedance spectroscopy

NASA Astrophysics Data System (ADS)

Rahman Khan, Motiur; Anjaneyulu, P.; Koteswara Rao, K. S. R.; Menon, R.

2017-03-01

We report on the analysis of temperature-dependent current-voltage characteristics and impedance measurements of electrochemically doped poly(3-methylthiophene) devices at different doping levels. The extent of doping is carefully tailored such that only the bulk-limited transport mechanism prevails. A transition from exponentially distributed trap-limited transport to trap-free space-charge-limited current is observed in current-voltage conduction upon increasing the doping. The obtained trap densities (3.2  ×  1016 cm-3 and 8.6  ×  1015 cm-3) and trap energies (31.7 meV and 16.6 meV) for different devices signify the variation in disorder with doping, which is later supported by impedance measurements. Impedance-frequency data for various devices can not be explained using the parallel resistance-capacitance (RC) model in the equivalent circuit. However, this was established by incorporating a constant phase element Q (CPE) instead of the capacitance parameter. It should be emphasized that low doping devices in particular are best simulated with two CPE elements, while the data related to other devices are fitted well with a single CPE element. It is also observed from evaluated circuit parameters that the spatial inhomogeneity and disorder are the cause of variability in different samples, which has an excellent correlation with the temperature-dependent current-voltage characteristics.

RF lockout circuit for electronic locking system

NASA Astrophysics Data System (ADS)

Becker, Earl M., Jr.; Miller, Allen

1991-02-01

An electronics lockout circuit was invented that includes an antenna adapted to receive radio frequency signals from a transmitter, and a radio frequency detector circuit which converts the radio frequency signals into a first direct current voltage indicative of the relative strength of the field resulting from the radio frequency signals. The first direct current voltage is supplied to a trigger circuit which compares this direct current voltage to an adjustable direct current reference voltage. This provides a second direct current voltage at the output whenever the amplitude of the first direct current voltage exceeds the amplitude of the reference voltage provided by the comparator circuit. This is supplied to a disconnect relay circuit which, upon receiving a signal from the electronic control unit of an electronic combination lock during the time period at which the second direct current voltage is present, isolates the door strike coil of a security door from the electronic control unit. This prevents signals falsely generated by the electronic control unit because of radio frequency signals in the vicinity of the electronic control unit energizing the door strike coil and accidentally opening a security door.

Recent progress in low-temperature-process monolithic three dimension technology

NASA Astrophysics Data System (ADS)

Yang, Chih-Chao; Hsieh, Tung-Ying; Huang, Wen-Hsien; Shen, Chang-Hong; Shieh, Jia-Min; Yeh, Wen-Kuan; Wu, Meng-Chyi

2018-04-01

Monolithic three-dimension (3D) integration is an ultimate alternative method of fabricating high density, high performance, and multi-functional integrated circuits. It offers the promise of being a new approach to increase system performance. How to manage the thermal impact of multi-tiered processes, such as dopant activation, source/drain silicidation, and channel formation, and to prevent the degradation of pre-existing devices/circuits become key challenges. In this paper, we provide updates on several important monolithic 3D works, particularly in sequentially stackable channels, and our recent achievements in monolithic 3D integrated circuit (3D-IC). These results indicate that the advanced 3D architecture with novel design tools enables ultrahigh-density stackable circuits to have superior performance and low power consumption for future artificial intelligence (AI) and internet of things (IoTs) application.

Improved analysis techniques for cylindrical and spherical double probes.

PubMed

Beal, Brian; Johnson, Lee; Brown, Daniel; Blakely, Joseph; Bromaghim, Daron

2012-07-01

A versatile double Langmuir probe technique has been developed by incorporating analytical fits to Laframboise's numerical results for ion current collection by biased electrodes of various sizes relative to the local electron Debye length. Application of these fits to the double probe circuit has produced a set of coupled equations that express the potential of each electrode relative to the plasma potential as well as the resulting probe current as a function of applied probe voltage. These equations can be readily solved via standard numerical techniques in order to determine electron temperature and plasma density from probe current and voltage measurements. Because this method self-consistently accounts for the effects of sheath expansion, it can be readily applied to plasmas with a wide range of densities and low ion temperature (T(i)/T(e) ≪ 1) without requiring probe dimensions to be asymptotically large or small with respect to the electron Debye length. The presented approach has been successfully applied to experimental measurements obtained in the plume of a low-power Hall thruster, which produced a quasineutral, flowing xenon plasma during operation at 200 W on xenon. The measured plasma densities and electron temperatures were in the range of 1 × 10(12)-1 × 10(17) m(-3) and 0.5-5.0 eV, respectively. The estimated measurement uncertainty is +6%∕-34% in density and +∕-30% in electron temperature.

An alternative explanation for the occurrence of short circuit current increases in the small intestine following challenge by bacterial enterotoxins.

PubMed

Lucas, M L

2013-10-01

Secretory diarrhoeal disease due to enterotoxins is thought to arise from the enhancement to pathologically high rates of normally occurring chloride ion and therefore fluid secretion from enterocytes. In support of this concept, many enterotoxins increase intestinal short-circuit current, regarded now as faithfully reflecting the increased chloride ion secretion. Contradicting this assumption, STa reduces absorption but does not cause secretion in vivo although short-circuit current is increased in vitro. There is therefore a mismatch between an assumed enterocyte mediated secretory event that should but does not cause net fluid secretion and an undoubtedly increased short-circuit current. It is proposed here that short-circuit current increases are not themselves secretory events but result from interrupted fluid absorption. A noteworthy feature of compounds that inhibit the increase in short-circuit current is that the majority are vasoactive, neuroactive or both. In general, vasodilator substances increase current. An alternative hypothesis for the origin of short-circuit current increases is that these result from reflex induction of electrogenic fluid absorption. This reflex enhances a compensatory response that is also present at a cellular level. An intestinal reflex is therefore proposed by which decreases in interstitial and intravascular volume or pressure within the intestine initiate an electrogenic fluid absorption mechanism that compensates for the loss of electrically neutral fluid absorption. This hypothesis would explain the apparently complex pharmacology of short-circuit current increases since many depressor substances have receptors in common with enterocytes and enteric nerves. The proposed alternative view of the origin of short-circuit current increases assumes that these do not represent chloride secretion from the enterocytes. This view may therefore aid the successful development of anti-diarrhoeal drugs to overcome a major cause of infant mortality worldwide, if short-circuit current data are being persistently misinterpreted. The putative but testable link between interstitial volume or pressure and fluid absorption also provides support for the alternative view of secretion; namely, that enhanced capillary and epithelial cell tight junctional permeability together with increased intracapillary pressure may cause secretion and not chloride exit from the enterocytes. Copyright © 2013. Published by Elsevier Ltd.

Sheath expansion and plasma dynamics in the presence of electrode evaporation: Application to a vacuum circuit breaker

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarrailh, P.; LAPLACE, CNRS, F-31062 Toulouse; Schneider Electric, Centre de Recherche 38 TEC, 38050 Grenoble Cedex 09

2009-09-01

During the postarc dielectric recovery phase in a vacuum circuit breaker, a cathode sheath forms and expels the plasma from the electrode gap. The success or failure of current breaking depends on how efficiently the plasma is expelled from the electrode gap. The sheath expansion in the postarc phase can be compared to sheath expansion in plasma immersion ion implantation except that collisions between charged particles and atoms generated by electrode evaporation may become important in a vacuum circuit breaker. In this paper, we show that electrode evaporation plays a significant role in the dynamics of the sheath expansion inmore » this context not only because charged particle transport is no longer collisionless but also because the neutral flow due to evaporation and temperature gradients may push the plasma toward one of the electrodes. Using a hybrid model of the nonequilibrium postarc plasma and cathode sheath coupled with a direct simulation Monte Carlo method to describe collisions between heavy species, we present a parametric study of the sheath and plasma dynamics and of the time needed for the sheath to expel the plasma from the gap for different values of plasma density and electrode temperatures at the beginning of the postarc phase. This work constitutes a preliminary step toward understanding and quantifying the risk of current breaking failure of a vacuum arc.« less

Sheath expansion and plasma dynamics in the presence of electrode evaporation: Application to a vacuum circuit breaker

NASA Astrophysics Data System (ADS)

Sarrailh, P.; Garrigues, L.; Hagelaar, G. J. M.; Boeuf, J. P.; Sandolache, G.; Rowe, S.

2009-09-01

During the postarc dielectric recovery phase in a vacuum circuit breaker, a cathode sheath forms and expels the plasma from the electrode gap. The success or failure of current breaking depends on how efficiently the plasma is expelled from the electrode gap. The sheath expansion in the postarc phase can be compared to sheath expansion in plasma immersion ion implantation except that collisions between charged particles and atoms generated by electrode evaporation may become important in a vacuum circuit breaker. In this paper, we show that electrode evaporation plays a significant role in the dynamics of the sheath expansion in this context not only because charged particle transport is no longer collisionless but also because the neutral flow due to evaporation and temperature gradients may push the plasma toward one of the electrodes. Using a hybrid model of the nonequilibrium postarc plasma and cathode sheath coupled with a direct simulation Monte Carlo method to describe collisions between heavy species, we present a parametric study of the sheath and plasma dynamics and of the time needed for the sheath to expel the plasma from the gap for different values of plasma density and electrode temperatures at the beginning of the postarc phase. This work constitutes a preliminary step toward understanding and quantifying the risk of current breaking failure of a vacuum arc.

Colloidal quantum dot solar cells exploiting hierarchical structuring.

PubMed

Labelle, André J; Thon, Susanna M; Masala, Silvia; Adachi, Michael M; Dong, Haopeng; Farahani, Maryam; Ip, Alexander H; Fratalocchi, Andrea; Sargent, Edward H

2015-02-11

Extremely thin-absorber solar cells offer low materials utilization and simplified manufacture but require improved means to enhance photon absorption in the active layer. Here, we report enhanced-absorption colloidal quantum dot (CQD) solar cells that feature transfer-stamped solution-processed pyramid-shaped electrodes employed in a hierarchically structured device. The pyramids increase, by up to a factor of 2, the external quantum efficiency of the device at absorption-limited wavelengths near the absorber band edge. We show that absorption enhancement can be optimized with increased pyramid angle with an appreciable net improvement in power conversion efficiency, that is, with the gain in current associated with improved absorption and extraction overcoming the smaller fractional decrease in open-circuit voltage associated with increased junction area. We show that the hierarchical combination of micron-scale structured electrodes with nanoscale films provides for an optimized enhancement at absorption-limited wavelengths. We fabricate 54.7° pyramid-patterned electrodes, conformally apply the quantum dot films, and report pyramid CQD solar cells that exhibit a 24% improvement in overall short-circuit current density with champion devices providing a power conversion efficiency of 9.2%.

Effect of emitter layer doping concentration on the performance of a silicon thin film heterojunction solar cell

NASA Astrophysics Data System (ADS)

Zhang, Lei; Shen, Hong-Lie; Yue, Zhi-Hao; Jiang, Feng; Wu, Tian-Ru; Pan, Yuan-Yuan

2013-01-01

A novel type of n/i/i/p heterojunction solar cell with a-Si:H(15 nm)/a-Si:H(10 nm)/ epitaxial c-Si(47 μm)/epitaxial c-Si(3 μm) structure is fabricated by using the layer transfer technique, and the emitter layer is deposited by hot wire chemical vapour deposition. The effect of the doping concentration of the emitter layer Sd (Sd=PH3/(PH3+SiH4+H2)) on the performance of the solar cell is studied by means of current density—voltage and external quantum efficiency. The results show that the conversion efficiency of the solar cell first increases to a maximum value and then decreases with Sd increasing from 0.1% to 0.4%. The best performance of the solar cell is obtained at Sd = 0.2% with an open circuit voltage of 534 mV, a short circuit current density of 23.35 mA/cm2, a fill factor of 63.3%, and a conversion efficiency of 7.9%.

An enhanced mangiferaindica for dye sensitized solar cell application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Uno, U. E., E-mail: moses.emetere@covenantuniversity.edu.ng; Emetere, M. E., E-mail: uno-essang@yahoo.co.uk; Fadipe, L. A.

Titanium dioxide (T1O2) is preferred to Zinc oxide as mesoporous oxide layer because it raised the efficiency of DSSCs from 1% to 7%. The chemistry of the process however seem rigorous to allow the light induced electron injection from the adsorbed dye into the nanocrystallites i.e. which renders the TiO{sub 2} conductive. The DSSC fabricated consist of 2.25 cm{sup 2} active area of titanium dioxide coated on FTO glass (fluorine tin oxide) immersed in ethanol solution of natural dye extracted as an anode (electrode) and counter electrode. These two electrodes were coupled together and the space between them was filledmore » with the Iodolyte AN-50 as solid electrolyte or redox mediator. The photo electrochemical parameters of the dye extracted (Mango fruit Peel) from the results obtained are short circuit current (Isc)= 1.22×10{sup −2}, current density (Jsc)=4.07×10{sup −2}, open circuit voltage (voc) =0.53V, fill factor (FF) of 0.16 and the overall conversion efficiency (Eff) =0.345%.« less

Low-bandgap mixed tin–lead iodide perovskite absorbers with long carrier lifetimes for all-perovskite tandem solar cells

DOE PAGES

Zhao, Dewei; Yu, Yue; Wang, Changlei; ...

2017-03-01

Tandem solar cells using only metal-halide perovskite sub-cells are an attractive choice for next-generation solar cells. However, the progress in developing efficient all-perovskite tandem solar cells has been hindered by the lack of high-performance low-bandgap perovskite solar cells. Here in this paper, we report efficient mixed tin-lead iodide low-bandgap (~1.25 eV) perovskite solar cells with open-circuit voltages up to 0.85 V and over 70% external quantum efficiencies in the infrared wavelength range of 700-900 nm, delivering a short-circuit current density of over 29 mA cm -2 and demonstrating suitability for bottom-cell applications in all-perovskite tandem solar cells. Our low-bandgap perovskitemore » solar cells achieve a maximum power conversion efficiency of 17.6% and a certified efficiency of 17.01% with a negligible current-voltage hysteresis. Finally, when mechanically stacked with a ~1.58 eV bandgap perovskite top cell, our best all-perovskite 4-terminal tandem solar cell shows a steady-state efficiency of 21.0%.« less

Low-bandgap mixed tin–lead iodide perovskite absorbers with long carrier lifetimes for all-perovskite tandem solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Dewei; Yu, Yue; Wang, Changlei

Tandem solar cells using only metal-halide perovskite sub-cells are an attractive choice for next-generation solar cells. However, the progress in developing efficient all-perovskite tandem solar cells has been hindered by the lack of high-performance low-bandgap perovskite solar cells. Here in this paper, we report efficient mixed tin-lead iodide low-bandgap (~1.25 eV) perovskite solar cells with open-circuit voltages up to 0.85 V and over 70% external quantum efficiencies in the infrared wavelength range of 700-900 nm, delivering a short-circuit current density of over 29 mA cm -2 and demonstrating suitability for bottom-cell applications in all-perovskite tandem solar cells. Our low-bandgap perovskitemore » solar cells achieve a maximum power conversion efficiency of 17.6% and a certified efficiency of 17.01% with a negligible current-voltage hysteresis. Finally, when mechanically stacked with a ~1.58 eV bandgap perovskite top cell, our best all-perovskite 4-terminal tandem solar cell shows a steady-state efficiency of 21.0%.« less

Impact of built-in fields and contact configuration on the characteristics of ultra-thin GaAs solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aeberhard, Urs, E-mail: u.aeberhard@fz-juelich.de

2016-07-18

We discuss the effects of built-in fields and contact configuration on the photovoltaic characteristics of ultra-thin GaAs solar cells. The investigation is based on advanced quantum-kinetic simulations reaching beyond the standard semi-classical bulk picture concerning the consideration of charge carrier states and dynamics in complex potential profiles. The thickness dependence of dark and photocurrent in the ultra-scaled regime is related to the corresponding variation of both, the built-in electric fields and associated modification of the density of states, and the optical intensity in the films. Losses in open-circuit voltage and short-circuit current due to the leakage of electronically and opticallymore » injected carriers at minority carrier contacts are investigated for different contact configurations including electron and hole blocking barrier layers. The microscopic picture of leakage currents is connected to the effect of finite surface recombination velocities in the semi-classical description, and the impact of these non-classical contact regions on carrier generation and extraction is analyzed.« less

Bi-anchoring organic sensitizers of type D-(π-A)2 comprising thiophene-2-acetonitrile as π-spacer and malonic acid as electron acceptor for dye sensitized solar cell applications

NASA Astrophysics Data System (ADS)

Reddy, Gachumale Saritha; Ramkumar, Sekar; Asiri, Abdullah M.; Anandan, Sambandam

2015-06-01

Two new bi-anchoring organic sensitizers of type D-(π-A)2 comprising the identical π-spacer (thiophene-2-acetonitrile) and electron acceptor (malonic acid) but different aryl amine as electron donors (diphenylamine and carbazole) were synthesized, characterized and fabricated metal free dye-sensitized solar cell devices. The intra molecular charge transfer property and electrochemical property of these dyes were investigated by molecular absorption, emission, cyclic voltammetric experiments and in addition, quantum chemical calculation studies were performed to provide sufficient driving force for the electron injection into the conduction band of TiO2 which leads to efficient charge collection. Among the fabricated devices, carbazole based device exhibits high current conversion efficiency (η = 4.7%) with a short circuit current density (JSC) 15.3 mA/cm2, an open circuit photo voltage (VOC) of 0.59 V and a fill factor of 0.44 under AM 1.5 illumination (85 mW/cm2) compared to diphenylamine based device.

Cross-field electron transport inside an insulating cylinder of a baffled probe

NASA Astrophysics Data System (ADS)

Raitses, Yevgeny; Alt, Andrew

2017-10-01

Plasma-immersed wall experiments have been performed in a magnetized xenon plasma in a cross-field Penning configuration with density around 1012 cm-3 and an electron temperature around a few eV. A cylinder with an open end and diameter of 1.4 mm was placed across field lines so that electrons were blocked from reaching a wire recessed behind the shield while ions were unimpeded. The reduction of electron current to the wire causes it to float closer to the plasma potential, possibly making a device that can passively measure plasma potential. However, the measured electron current was much higher than expected even when the wire was recessed several electron gyroradii behind the baffle. Possible mechanisms for this electron conduction causing the short circuiting to the bulk plasma have been studied with numerical approaches and with a dedicated experiment designed to isolate this short circuit effect. The obtained results may be important for cross-field transport in a variety of other configurations in magnetized, low-temperature plasmas. This work was supported by DOE contract DE-AC02-09CH11466.

Consequences and mitigation of saltwater intrusion induced by short-circuiting during aquifer storage and recovery in a coastal subsurface

NASA Astrophysics Data System (ADS)

Gerardus Zuurbier, Koen; Stuyfzand, Pieter Jan

2017-02-01

Coastal aquifers and the deeper subsurface are increasingly exploited. The accompanying perforation of the subsurface for those purposes has increased the risk of short-circuiting of originally separated aquifers. This study shows how this short-circuiting negatively impacts the freshwater recovery efficiency (RE) during aquifer storage and recovery (ASR) in coastal aquifers. ASR was applied in a shallow saltwater aquifer overlying a deeper, confined saltwater aquifer, which was targeted for seasonal aquifer thermal energy storage (ATES). Although both aquifers were considered properly separated (i.e., a continuous clay layer prevented rapid groundwater flow between both aquifers), intrusion of deeper saltwater into the shallower aquifer quickly terminated the freshwater recovery. The presumable pathway was a nearby ATES borehole. This finding was supported by field measurements, hydrochemical analyses, and variable-density solute transport modeling (SEAWAT version 4; Langevin et al., 2007). The potentially rapid short-circuiting during storage and recovery can reduce the RE of ASR to null. When limited mixing with ambient groundwater is allowed, a linear RE decrease by short-circuiting with increasing distance from the ASR well within the radius of the injected ASR bubble was observed. Interception of deep short-circuiting water can mitigate the observed RE decrease, although complete compensation of the RE decrease will generally be unattainable. Brackish water upconing from the underlying aquitard towards the shallow recovery wells of the ASR system with multiple partially penetrating wells (MPPW-ASR) was observed. This leakage may lead to a lower recovery efficiency than based on current ASR performance estimations.

46 CFR 111.52-3 - Systems below 1500 kilowatts.

Code of Federal Regulations, 2010 CFR

2010-10-01

...-GENERAL REQUIREMENTS Calculation of Short-Circuit Currents § 111.52-3 Systems below 1500 kilowatts. The following short-circuit assumptions must be made for a system with an aggregate generating capacity below... maximum short-circuit current of a direct current system must be assumed to be 10 times the aggregate...

30 CFR 75.825 - Power centers.

Code of Federal Regulations, 2011 CFR

2011-07-01

..., and be designed and installed as follows: (1) Rated for the maximum phase-to-phase voltage of the circuit; (2) Rated for the full-load current of the circuit that is supplied power through the device. (3... current of the circuit or causes the current to be interrupted automatically before the disconnecting...

A device for testing cables

NASA Technical Reports Server (NTRS)

Hayhurst, Arthur Ray (Inventor)

1993-01-01

A device for testing current paths is attachable to a conductor. The device automatically checks the current paths of the conductor for continuity of a center conductor, continuity of a shield, and a short circuit between the shield and the center conductor. The device includes a pair of connectors and a circuit to provide for testing of the conductive paths of a cable to be tested with the circuit paths of the circuit. The circuit paths in the circuit include indicators to simultaneously indicate the results of the testing.

Characterization of Printed Circuit Boards for Metal and Energy Recovery after Milling and Mechanical Separation

PubMed Central

Bizzo, Waldir A.; Figueiredo, Renata A.; de Andrade, Valdelis F.

2014-01-01

The proper disposal of electrical and electronic waste is currently a concern of researchers and environmental managers not only because of the large volume of such waste generated, but also because of the heavy metals and toxic substances it contains. This study analyzed printed circuit boards (PCBs) from discarded computers to determine their metal content and characterized them as solid waste and fuel. The analysis showed that PCBs consist of approximately 26% metal, made up mainly of copper, lead, aluminum, iron and tin, as well as other heavy metals such as cadmium and nickel. Comparison with the results of other studies indicated that the concentration of precious metals (gold and silver) has declined over time. Analysis of the leachate revealed high concentrations of cadmium and lead, giving the residue the characteristics of hazardous waste. After milling the PCBs, we found that larger amounts of metal were concentrated in smaller fractions, while the lightest fraction, obtained by density separation, had a gross calorific value of approximately 11 MJ/kg, although with a high ash content. Milling followed by density separation proved potentially useful for recovery of metals and energy-rich fractions. PMID:28788692

Design and Fabrication of a Dual-Photoelectrode Fuel Cell towards Cost-Effective Electricity Production from Biomass.

PubMed

Zhang, Bingqing; Fan, Wenjun; Yao, Tingting; Liao, Shichao; Li, Ailong; Li, Deng; Liu, Mingyao; Shi, Jingying; Liao, Shijun; Li, Can

2017-01-10

A photo fuel cell (PFC) offers an attractive way to simultaneously convert solar and biomass energy into electricity. Photocatalytic biomass oxidation on a semiconductor photoanode combined with dark electrochemical reduction of oxygen molecules on a metal cathode (usually Pt) in separated compartments is the common configuration for a PFC. Herein, we report a membrane-free PFC based on a dual electrode, including a W-doped BiVO 4 photoanode and polyterthiophene photocathode for solar-stimulated biomass-to-electricity conversion. Air- and water-soluble biomass derivatives can be directly used as reagents. The optimal device yields an open-circuit voltage (V OC ) of 0.62 V, a short-circuit current density (J SC ) of 775 μA cm -2 , and a maximum power density (P max ) of 82 μW cm -2 with glucose as the feedstock under tandem illumination, which outperforms dual-photoelectrode PFCs previously reported. Neither costly separating membranes nor Pt-based catalysts are required in the proposed PFC architecture. Our work may inspire rational device designs for cost-effective electricity generation from renewable resources. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

A complete dc characterization of a constant-frequency, clamped-mode, series-resonant converter

NASA Technical Reports Server (NTRS)

Tsai, Fu-Sheng; Lee, Fred C.

1988-01-01

The dc behavior of a clamped-mode series-resonant converter is characterized systematically. Given a circuit operating condition, the converter's mode of operation is determined and various circuit parameters are calculated, such as average inductor current (load current), rms inductor current, peak capacitor voltage, rms switch currents, average diode currents, switch turn-on currents, and switch turn-off currents. Regions of operation are defined, and various circuit characteristics are derived to facilitate the converter design.

Protective Socket For Integrated Circuits

NASA Technical Reports Server (NTRS)

Wilkinson, Chris; Henegar, Greg

1988-01-01

Socket for intergrated circuits (IC's) protects from excessive voltages and currents or from application of voltages and currents in wrong sequence during insertion or removal. Contains built-in switch that opens as IC removed, disconnecting leads from signals and power. Also protects other components on circuit board from transients produced by insertion and removal of IC. Makes unnecessary to turn off power to entire circuit board so other circuits on board continue to function.

The dc power circuits: A compilation

NASA Technical Reports Server (NTRS)

1972-01-01

A compilation of reports concerning power circuits is presented for the dissemination of aerospace information to the general public as part of the NASA Technology Utilization Program. The descriptions for the electronic circuits are grouped as follows: dc power supplies, power converters, current-voltage power supply regulators, overload protection circuits, and dc constant current power supplies.

Module Twelve: Series AC Resistive-Reactive Circuits; Basic Electricity and Electronics Individualized Learning System.

ERIC Educational Resources Information Center

Bureau of Naval Personnel, Washington, DC.

The module covers series circuits which contain both resistive and reactive components and methods of solving these circuits for current, voltage, impedance, and phase angle. The module is divided into six lessons: voltage and impedance in AC (alternating current) series circuits, vector computations, rectangular and polar notation, variational…

Scale Up Considerations for Sediment Microbial Fuel Cells

DTIC Science & Technology

2013-01-01

density calculations were made once WPs stabilized for each system. Linear sweep voltametry was then used on these systems to generate polarization and...power density curves. The systems were allowed to equilibrate under open circuit conditions (about 12 h) before a potential sweep was performed with a...reference. The potential sweep was set to begin at the anode potential under open circuit conditions (20.4 V vs. Ag/AgCl) and was raised to the

A readout integrated circuit based on DBI-CTIA and cyclic ADC for MEMS-array-based focal plane

NASA Astrophysics Data System (ADS)

Miao, Liu; Dong, Wu; Zheyao, Wang

2016-11-01

A readout integrated circuit (ROIC) for a MEMS (microelectromechanical system)-array-based focal plane (MAFP) intended for imaging applications is presented. The ROIC incorporates current sources for diode detectors, scanners, timing sequence controllers, differential buffered injection-capacitive trans-impedance amplifier (DBI-CTIA) and 10-bit cyclic ADCs, and is integrated with MAFP using 3-D integration technology. A small-signal equivalent model is built to include thermal detectors into circuit simulations. The biasing current is optimized in terms of signal-to-noise ratio and power consumption. Layout design is tailored to fulfill the requirements of 3-D integration and to adapt to the size of MAFP elements, with not all but only the 2 bottom metal layers to complete nearly all the interconnections in DBI-CTIA and ADC in a 40 μm wide column. Experimental chips are designed and fabricated in a 0.35 μm CMOS mixed signal process, and verified in a code density test of which the results indicate a (0.29/-0.31) LSB differential nonlinearity (DNL) and a (0.61/-0.45) LSB integral nonlinearity (INL). Spectrum analysis shows that the effective number of bits (ENOB) is 9.09. The ROIC consumes 248 mW of power at most if not to cut off quiescent current paths when not needed. Project supported by by National Natural Science Foundation of China (No. 61271130), the Beijing Municipal Science and Tech Project (No. D13110100290000), the Tsinghua University Initiative Scientific Research Program (No. 20131089225), and the Shenzhen Science and Technology Development Fund (No. CXZZ20130322170740736).

Calculations of the displacement damage and short-circuit current degradation in proton irradiated (AlGa)As-GaAs solar cells

NASA Technical Reports Server (NTRS)

Yeh, C. S.; Li, S. S.; Loo, R. Y.

1987-01-01

A theoretical model for computing the displacement damage defect density and the short-circuit current (I sub sc) degradation in proton-irradiated (AlGa)As-GaAs p-n junction solar cells is presented. Assumptions were made with justification that the radiation induced displacement defects form an effective recombination center which controls the electron and hole lifetimes in the junction space charge region and in the n-GaAs active layer of the irradiated GaAs p-n junction cells. The degradation of I sub sc in the (AlGa)As layer was found to be negligible compared to the total degradation. In order to determine the I sub sc degradation, the displacement defect density, path length, range, reduced energy after penetrating a distance x, and the average number of displacements formed by one proton scattering event were first calculated. The I sub sc degradation was calculated by using the electron capture cross section in the p-diffused layer and the hole capture cross section in the n-base layer as well as the wavelength dependent absorption coefficients. Excellent agreement was found between the researchers calculated values and the measured I sub sc in the proton irradiated GaAs solar cells for proton energies of 100 KeV to 10 MeV and fluences from 10 to the 10th power p/square cm to 10 to the 12th power p/square cm.

Module failure isolation circuit for paralleled inverters. [preventing system failure during power conditioning for spacecraft applications

NASA Technical Reports Server (NTRS)

Nagano, S. (Inventor)

1979-01-01

A module failure isolation circuit is described which senses and averages the collector current of each paralled inverter power transistor and compares the collector current of each power transistor the average collector current of all power transistors to determine when the sensed collector current of a power transistor in any one inverter falls below a predetermined ratio of the average collector current. The module associated with any transistor that fails to maintain a current level above the predetermined radio of the average collector current is then shut off. A separate circuit detects when there is no load, or a light load, to inhibit operation of the isolation circuit during no load or light load conditions.

46 CFR 28.860 - Overcurrent protection and switched circuits.

Code of Federal Regulations, 2010 CFR

2010-10-01

... current carrying conductor must be protected in accordance with its current carrying capacity by a circuit breaker or fuse at the connection to the switchboard or distribution panel bus. (d) Each circuit breaker...

46 CFR 28.860 - Overcurrent protection and switched circuits.

Code of Federal Regulations, 2011 CFR

2011-10-01

... current carrying conductor must be protected in accordance with its current carrying capacity by a circuit breaker or fuse at the connection to the switchboard or distribution panel bus. (d) Each circuit breaker...

30 CFR 77.900-2 - Testing, examination, and maintenance of circuit breakers; record.

Code of Federal Regulations, 2011 CFR

2011-07-01

... protecting low- and medium-voltage circuits serving three-phase alternating current equipment and such record... AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits...

30 CFR 77.900-1 - Testing, examination, and maintenance of circuit breakers; procedures.

Code of Federal Regulations, 2011 CFR

2011-07-01

... protecting low- and medium-voltage circuits serving portable or mobile three-phase alternating current... AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits...

30 CFR 77.900-2 - Testing, examination, and maintenance of circuit breakers; record.

Code of Federal Regulations, 2010 CFR

2010-07-01

... protecting low- and medium-voltage circuits serving three-phase alternating current equipment and such record... AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits...

30 CFR 77.900-1 - Testing, examination, and maintenance of circuit breakers; procedures.

Code of Federal Regulations, 2010 CFR

2010-07-01

... protecting low- and medium-voltage circuits serving portable or mobile three-phase alternating current... AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits...

Electron density and plasma dynamics of a spherical theta pinch

NASA Astrophysics Data System (ADS)

Teske, C.; Liu, Y.; Blaes, S.; Jacoby, J.

2012-03-01

A spherical theta pinch for plasma stripper applications has been developed and investigated regarding the electron density and the plasma confinement during the pinching sequence. The setup consists of a 6 μH induction coil surrounding a 4000 ml spherical discharge vessel and a capacitor bank with interchangeable capacitors leading to an overall capacitance of 34 μF and 50 μF, respectively. A thyristor switch is used for driving the resonant circuit. Pulsed coil currents reached values of up to 26 kA with maximum induction of 500 mT. Typical gas pressures were 0.7 Pa up to 120 Pa with ArH2 (2.8% H2)-gas as a discharge medium. Stark broadening measurements of the Hβ emission line were carried out in order to evaluate the electron density of the discharge. In accordance with the density measurements, the transfer efficiency was estimated and a scaling law between electron density and discharge energy was established for the current setup. The densities reached values of up to 8 × 1022 m-3 for an energy of 1.6 kJ transferred into the plasma. Further, the pinching of the discharge plasma was documented and the different stages of the pinching process were analyzed. The experimental evidence suggests that concerning the recent setup of the spherical theta pinch, a linear scaling law between the transferred energy and the achievable plasma density can be applied for various applications like plasma strippers and pulsed ion sources.

The effects of amiloride and age on oxygen consumption coupled to electrogenic sodium transport in the human sigmoid colon.

PubMed

Carra, Graciela E; Matus, Daniel; Ibáñez, Jorge E; Saraví, Fernando D

2015-01-01

Aerobic metabolism is necessary for ion transport in many transporting epithelia, including the human colonic epithelium. We assessed the effects of the epithelial sodium channel blocker, amiloride, on oxygen consumption and short-circuit current of the human sigmoid epithelium to determine whether these effects were influenced by the age of the subject. Segments of the sigmoid colon were obtained from the safety margin of resections performed in patients of 62-77 years of age. Isolated mucosa preparations were obtained and mounted in airtight Ussing chambers, fit for simultaneous measurement of short-circuit current and oxygen concentration, before and after blocking epithelial sodium channels with amiloride (0.1 mmol/L). Regression analyses were performed to assess the associations between short-circuit current, oxygen consumption, and age of the subject as well as to define the relationship between the decreases in short-circuit current and oxygen consumption after blockade. Epithelial sodium channel blockade caused an 80% reduction in short-circuit current and a 26% reduction in oxygen consumption. Regression analysis indicated that both changes were significantly related (r = 0.884;P = 0.0007). Oxygen consumption decreased by 1 m mol/h/cm2 for each 25 m A/cm2 decrease in short-circuit current. Neither short-circuit current nor oxygen consumption had any significant relationship with the age of the subjects. The decrease in epithelial oxygen consumption caused by amiloride is proportional to the decrease in short-circuit current and independent of the age of the subject.

Pupils' Representations of Electric Current before, during and after Instruction on DC Circuits.

ERIC Educational Resources Information Center

Psillos, D.; And Others

1987-01-01

Reported are compulsory education pupils' representations of electric current in a constructivist approach to introducing direct current (DC) circuits. Suggests that the pupils views can be modelled after an energy framework. Makes suggestions about the content, the apparatus and the experiments used in teaching DC circuits. (CW)

Development of wavelength locking circuit for 1.53 micron water vapor monitoring coherent differential absorption LIDAR

NASA Astrophysics Data System (ADS)

Imaki, Masaharu; Kojima, Ryota; Kameyama, Shumpei

2018-04-01

We have studied a ground based coherent differential absorption LIDAR (DIAL) for vertical profiling of water vapor density using a 1.5μm laser wavelength. A coherent LIDAR has an advantage in daytime measurement compared with incoherent LIDAR because the influence of background light is greatly suppressed. In addition, the LIDAR can simultaneously measure wind speed and water vapor density. We had developed a wavelength locking circuit using the phase modulation technique and offset locking technique, and wavelength stabilities of 0.123 pm which corresponds to 16 MHz are realized. In this paper, we report the wavelength locking circuits for the 1.5 um wavelength.

Characterization of oscillator circuits for monitoring the density-viscosity of liquids by means of piezoelectric MEMS microresonators

NASA Astrophysics Data System (ADS)

Toledo, J.; Ruiz-Díez, V.; Pfusterschmied, G.; Schmid, U.; Sánchez-Rojas, J. L.

2017-06-01

Real-time monitoring of the physical properties of liquids, such as lubricants, is a very important issue for the automotive industry. For example, contamination of lubricating oil by diesel soot has a significant impact on engine wear. Resonant microstructures are regarded as a precise and compact solution for tracking the viscosity and density of lubricant oils. In this work, we report a piezoelectric resonator, designed to resonate with the 4th order out-of-plane modal vibration, 15-mode, and the interface circuit and calibration process for the monitoring of oil dilution with diesel fuel. In order to determine the resonance parameters of interest, i.e. resonant frequency and quality factor, an interface circuit was implemented and included within a closed-loop scheme. Two types of oscillator circuits were tested, a Phase-Locked Loop based on instrumentation, and a more compact version based on discrete electronics, showing similar resolution. Another objective of this work is the assessment of a calibration method for piezoelectric MEMS resonators in simultaneous density and viscosity sensing. An advanced calibration model, based on a Taylor series of the hydrodynamic function, was established as a suitable method for determining the density and viscosity with the lowest calibration error. Our results demonstrate the performance of the resonator in different oil samples with viscosities up to 90 mPa•s. At the highest value, the quality factor measured at 25°C was around 22. The best resolution obtained was 2.4•10-6 g/ml for the density and 2.7•10-3 mPa•s for the viscosity, in pure lubricant oil SAE 0W30 at 90°C. Furthermore, the estimated density and viscosity values with the MEMS resonator were compared to those obtained with a commercial density-viscosity meter, reaching a mean calibration error in the best scenario of around 0.08% for the density and 3.8% for the viscosity.

Analysis and Design Considerations of a High-Power Density, Dual Air Gap, Axial-Field Brushless, Permanent Magnet Motor.

NASA Astrophysics Data System (ADS)

Cho, Chahee Peter

1995-01-01

Until recently, brush dc motors have been the dominant drive system because they provide easily controlled motor speed over a wide range, rapid acceleration and deceleration, convenient control of position, and lower product cost. Despite these capabilities, the brush dc motor configuration does not satisfy the design requirements for the U.S. Navy's underwater propulsion applications. Technical advances in rare-earth permanent magnet materials, in high-power semiconductor transistor technology, and in various rotor position-sensing devices have made using brushless permanent magnet motors a viable alternative. This research investigates brushless permanent magnet motor technology, studying the merits of dual-air gap, axial -field, brushless, permanent magnet motor configuration in terms of power density, efficiency, and noise/vibration levels. Because the design objectives for underwater motor applications include high-power density, high-performance, and low-noise/vibration, the traditional, simplified equivalent circuit analysis methods to assist in meeting these goals were inadequate. This study presents the development and verification of detailed finite element analysis (FEA) models and lumped parameter circuit models that can calculate back electromotive force waveforms, inductance, cogging torque, energized torque, and eddy current power losses. It is the first thorough quantification of dual air-gap, axial -field, brushless, permanent magnet motor parameters and performance characteristics. The new methodology introduced in this research not only facilitates the design process of an axial field, brushless, permanent magnet motor but reinforces the idea that the high-power density, high-efficiency, and low-noise/vibration motor is attainable.

Direct current ballast circuit for metal halide lamp

NASA Technical Reports Server (NTRS)

Lutus, P. (Inventor)

1981-01-01

A direct current ballast circuit for a two electrode metal halide lamp is described. Said direct current ballast circuit includes a low voltage DC input and a high frequency power amplifier and power transformer for developing a high voltage output. The output voltage is rectified by diodes and filtered by inductor and capacitor to provide a regulated DC output through commutating diodes to one terminal of the lamp at the output terminal. A feedback path from the output of the filter capacitor through the bias resistor to power the high frequency circuit which includes the power amplifier and the power transformer for sustaining circuit operations during low voltage transients on the input DC supply is described. A current sensor connected to the output of the lamp through terminal for stabilizing lamp current following breakdown of the lamp is described.

In-situ study of the gas-phase composition and temperature of an intermediate-temperature solid oxide fuel cell anode surface fed by reformate natural gas

NASA Astrophysics Data System (ADS)

Santoni, F.; Silva Mosqueda, D. M.; Pumiglia, D.; Viceconti, E.; Conti, B.; Boigues Muñoz, C.; Bosio, B.; Ulgiati, S.; McPhail, S. J.

2017-12-01

An innovative experimental setup is used for in-depth and in-operando characterization of solid oxide fuel cell anodic processes. This work focuses on the heterogeneous reactions taking place on a 121 cm2 anode-supported cell (ASC) running with a H2, CH4, CO2, CO and steam gas mixture as a fuel, using an operating temperature of 923 K. The results have been obtained by analyzing the gas composition and temperature profiles along the anode surface in different conditions: open circuit voltage (OCV) and under two different current densities, 165 mA cm-2 and 330 mA cm-2, corresponding to 27% and 54% of fuel utilization, respectively. The gas composition and temperature analysis results are consistent, allowing to monitor the evolution of the principal chemical and electrochemical reactions along the anode surface. A possible competition between CO2 and H2O in methane internal reforming is shown under OCV condition and low current density values, leading to two different types of methane reforming: Steam Reforming and Dry Reforming. Under a current load of 40 A, the dominance of exothermic reactions leads to a more marked increase of temperature in the portion of the cell close to the inlet revealing that current density is not uniform along the anode surface.

Investigation of rough surfaces on Cu2ZnSn(SxSe1-x)4 monograin layers using light beam induced current measurements

NASA Astrophysics Data System (ADS)

Neubauer, Christian; Babatas, Ertug; Meissner, Dieter

2017-11-01

Monograin technology has proven to be a successful way of manufacturing low cost photovoltaic applications using the pentanary Cu2ZnSn(SxSe1-x)4 (CZTSSe) as an absorber material in an industrial roll-to-roll process. For high efficient CZTSSe monograin device fabrication a thorough understanding of the impacts of the device characteristics and surface structure is important. A new evaluation method of Light Beam Induced Current (LBIC) images had to be developed to distinguish between different effects resulting from different surface orientations, grain sizes, packing densities and contacting areas. In this work we will show that with LBIC measurements it is possible to evaluate the quality and differences in produced CZTSSe monograin cells in a post-production and non-destructive step. The high spatial resolution evaluation allows investigating the homogeneity of single crystalline grains as well as certain areas of a CZTSSe device. By introducing a statistical method the active area as a major factor for the current density of a device will be calculated and evaluated. The results show that with LBIC measurements the active area can be quantified, which differs for the investigated cells up to 9%. Additionally, the homogeneity of short circuit current densities of the monograins and also of certain areas of a cell can be detected and quantified.

A Current-Mode Common-Mode Feedback Circuit (CMFB) with Rail-to-Rail Operation

NASA Astrophysics Data System (ADS)

Suadet, Apirak; Kasemsuwan, Varakorn

2011-03-01

This paper presents a current-mode common-mode feedback (CMFB) circuit with rail-to-rail operation. The CMFB is a stand-alone circuit, which can be connected to any low voltage transconductor without changing or upsetting the existing circuit. The proposed CMFB employs current mirrors, operating as common-mode detector and current amplifier to enhance the loop gain of the CMFB. The circuit employs positive feedback to enhance the output impedance and gain. The circuit has been designed using a 0.18 μm CMOS technology under 1V supply and analyzed using HSPICE with BSIM3V3 device models. A pseudo-differential amplifier using two common sources and the proposed CMFB shows rail to rail output swing (± 0.7 V) with low common-mode gain (-36 dB) and power dissipation of 390 μW.

Method and apparatus for linear low-frequency feedback in monolithic low-noise charge amplifiers

DOEpatents

DeGeronimo, Gianluigi

2006-02-14

A charge amplifier includes an amplifier, feedback circuit, and cancellation circuit. The feedback circuit includes a capacitor, inverter, and current mirror. The capacitor is coupled across the signal amplifier, the inverter is coupled to the output of the signal amplifier, and the current mirror is coupled to the input of the signal amplifier. The cancellation circuit is coupled to the output of the signal amplifier. A method of charge amplification includes providing a signal amplifier; coupling a first capacitor across the signal amplifier; coupling an inverter to the output of the signal amplifier; coupling a current mirror to the input of the signal amplifier; and coupling a cancellation circuit to the output of the signal amplifier. A front-end system for use with radiation sensors includes a charge amplifier and a current amplifier, shaping amplifier, baseline stabilizer, discriminator, peak detector, timing detector, and logic circuit coupled to the charge amplifier.

Large-scale, high-density (up to 512 channels) recording of local circuits in behaving animals

PubMed Central

Berényi, Antal; Somogyvári, Zoltán; Nagy, Anett J.; Roux, Lisa; Long, John D.; Fujisawa, Shigeyoshi; Stark, Eran; Leonardo, Anthony; Harris, Timothy D.

2013-01-01

Monitoring representative fractions of neurons from multiple brain circuits in behaving animals is necessary for understanding neuronal computation. Here, we describe a system that allows high-channel-count recordings from a small volume of neuronal tissue using a lightweight signal multiplexing headstage that permits free behavior of small rodents. The system integrates multishank, high-density recording silicon probes, ultraflexible interconnects, and a miniaturized microdrive. These improvements allowed for simultaneous recordings of local field potentials and unit activity from hundreds of sites without confining free movements of the animal. The advantages of large-scale recordings are illustrated by determining the electroanatomic boundaries of layers and regions in the hippocampus and neocortex and constructing a circuit diagram of functional connections among neurons in real anatomic space. These methods will allow the investigation of circuit operations and behavior-dependent interregional interactions for testing hypotheses of neural networks and brain function. PMID:24353300

Spiers Memorial Lecture. Molecular mechanics and molecular electronics.

PubMed

Beckman, Robert; Beverly, Kris; Boukai, Akram; Bunimovich, Yuri; Choi, Jang Wook; DeIonno, Erica; Green, Johnny; Johnston-Halperin, Ezekiel; Luo, Yi; Sheriff, Bonnie; Stoddart, Fraser; Heath, James R

2006-01-01

We describe our research into building integrated molecular electronics circuitry for a diverse set of functions, and with a focus on the fundamental scientific issues that surround this project. In particular, we discuss experiments aimed at understanding the function of bistable rotaxane molecular electronic switches by correlating the switching kinetics and ground state thermodynamic properties of those switches in various environments, ranging from the solution phase to a Langmuir monolayer of the switching molecules sandwiched between two electrodes. We discuss various devices, low bit-density memory circuits, and ultra-high density memory circuits that utilize the electrochemical switching characteristics of these molecules in conjunction with novel patterning methods. We also discuss interconnect schemes that are capable of bridging the micrometre to submicrometre length scales of conventional patterning approaches to the near-molecular length scales of the ultra-dense memory circuits. Finally, we discuss some of the challenges associated with fabricated ultra-dense molecular electronic integrated circuits.

Multijunction high voltage concentrator solar cells

NASA Technical Reports Server (NTRS)

Valco, G. J.; Kapoor, V. J.; Evans, J. C.; Chai, A.-T.

1981-01-01

The standard integrated circuit technology has been developed to design and fabricate new innovative planar multi-junction solar cell chips for concentrated sunlight applications. This 1 cm x 1 cm cell consisted of several voltage generating regions called unit cells which were internally connected in series within a single chip resulting in high open circuit voltages. Typical open-circuit voltages of 3.6 V and short-circuit currents of 90 ma were obtained at 80 AM1 suns. A dramatic increase in both short circuit current and open circuit voltage with increased light levels was observed.

Advanced Sulfur-Silicon Full Cell Architecture for Lithium Ion Batteries.

PubMed

Ye, Rachel; Bell, Jeffrey; Patino, Daisy; Ahmed, Kazi; Ozkan, Mihri; Ozkan, Cengiz S

2017-12-08

Lithium-ion batteries are crucial to the future of energy storage. However, the energy density of current lithium-ion batteries is insufficient for future applications. Sulfur cathodes and silicon anodes have garnered a lot of attention in the field due their high capacity potential. Although recent developments in sulfur and silicon electrodes show exciting results in half cell formats, neither electrode can act as a lithium source when put together into a full cell format. Current methods toward incorporating lithium in sulfur-silicon full cells involves prelithiating silicon or using lithium sulfide. These methods however, complicate material processing and creates safety hazards. Herein, we present a novel full cell battery architecture that bypasses the issues associated with current methods. This battery architecture gradually integrates controlled amounts of pure lithium into the system by allowing lithium the access to external circuit. A high specific energy density of 350 Wh/kg after 250 cycles at C/10 was achieved using this method. This work should pave the way for future researches into sulfur-silicon full cells.

Low-Cost HTS Based Magnet System with an Inductively Coupled Pulsed Energy Extraction Protection System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agustsson, Ronald

In this project, RadiaBeam Technologies was tasked with developing a novel solution for a cost effective quench protection based on fast expansion of the normal zone. By inductively coupling a strong electromagnetic pulse via a resonant LC circuit, we attempted to demonstrate accelerated normal zone propagation. The AC field induces currents in the superconducting layer with the current density exceeding that of the critical current density, J c. This creates a large normal zone, uniformly distributing the dissipation through the magnet body. The method does not rely on thermal heating of the conductor, thus enabling nearly instantaneous protection. Through themore » course of the Phase II project, RadiaBeam Technologies continued extensive numerical modeling of the inductive quench system, re-designed and built several iterations of the POC system for testing and observed evidence of a transient partial quench being induced. However the final device was not fabricated. This was a consequence of the fundamentally complex nature of the energy extraction process and the challenges associated even with demonstrating the proof of concept in a bench top device.« less

SQUID magnetometers for low-frequency applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ryhaenen, T.; Seppae, H.; Ilmoniemi, R.

1989-09-01

The authors present a novel formulation for SQUID operation, which enables them to evaluate and compare the sensitivity and applicability of different devices. SQUID magnetometers for low-frequency applications are analyzed, taking into account the coupling circuits and electronics. They discuss nonhysteretic and hysteretic single-junction rf SQUIDs, but the main emphasis is on the dynamics, sensitivity, and coupling considerations of dc-SQUID magnetometers. A short review of current ideas on thin-film, dc-SQUID design presents the problems in coupling and the basic limits of sensitivity. The fabrication technology of tunnel-junction devices is discussed with emphasis on how it limits critical current densities, specificmore » capacitances of junctions, minimum linewidths, conductor separations, etc. Properties of high-temperature superconductors are evaluated on the basis of recently published results on increased flux creep, low density of current carriers, and problems in fabricating reliable junctions. The optimization of electronics for different types of SQUIDs is presented. Finally, the most important low-frequency applications of SQUIDs in biomagnetism, metrology, geomagnetism, and some physics experiments demonstrate the various possibilities that state-of-the-art SQUIDs can provide.« less

High current density sheet-like electron beam generator

NASA Astrophysics Data System (ADS)

Chow-Miller, Cora; Korevaar, Eric; Schuster, John

Sheet electron beams are very desirable for coupling to the evanescent waves in small millimeter wave slow-wave circuits to achieve higher powers. In particular, they are critical for operation of the free-electron-laser-like Orotron. The program was a systematic effort to establish a solid technology base for such a sheet-like electron emitter system that will facilitate the detailed studies of beam propagation stability. Specifically, the effort involved the design and test of a novel electron gun using Lanthanum hexaboride (LaB6) as the thermionic cathode material. Three sets of experiments were performed to measure beam propagation as a function of collector current, beam voltage, and heating power. The design demonstrated its reliability by delivering 386.5 hours of operation throughout the weeks of experimentation. In addition, the cathode survived two venting and pump down cycles without being poisoned or losing its emission characteristics. A current density of 10.7 A/sq cm. was measured while operating at 50 W of ohmic heating power. Preliminary results indicate that the nearby presence of a metal plate can stabilize the beam.

A surface-potential-based drain current compact model for a-InGaZnO thin-film transistors in Non-Degenerate conduction regime

NASA Astrophysics Data System (ADS)

Yu, Fei; Ma, Xiaoyu; Deng, Wanling; Liou, Juin J.; Huang, Junkai

2017-11-01

A physics-based drain current compact model for amorphous InGaZnO (a-InGaZnO) thin-film transistors (TFTs) is proposed. As a key feature, the surface potential model accounts for both exponential tail and deep trap densities of states, which are essential to describe a-InGaZnO TFT electrical characteristics. The surface potential is solved explicitly without the process of amendment and suitable for circuit simulations. Furthermore, based on the surface potential, an explicit closed-form expression of the drain current is developed. For the cases of the different operational voltages, surface potential and drain current are verified by numerical results and experimental data, respectively. As a result, our model can predict DC characteristics of a-InGaZnO TFTs.

Aperture efficiency of integrated-circuit horn antennas

NASA Technical Reports Server (NTRS)

Guo, Yong; Lee, Karen; Stimson, Philip; Potter, Kent; Rutledge, David

1991-01-01

The aperture efficiency of silicon integrated-circuit horn antennas has been improved by optimizing the length of the dipole probes and by coating the entire horn walls with gold. To make these measurements, a new thin-film power-density meter was developed for measuring power density with accuracies better than 5 percent. The measured aperture efficiency improved from 44 percent to 72 percent at 93 GHz. This is sufficient for use in many applications which now use machined waveguide horns.

Polythiophenes Comprising Conjugated Pendants for Polymer Solar Cells: A Review

PubMed Central

Wang, Hsing-Ju; Chen, Chih-Ping; Jeng, Ru-Jong

2014-01-01

Polythiophene (PT) is one of the widely used donor materials for solution-processable polymer solar cells (PSCs). Much progress in PT-based PSCs can be attributed to the design of novel PTs exhibiting intense and broad visible absorption with high charge carrier mobility to increase short-circuit current density (Jsc), along with low-lying highest occupied molecular orbital (HOMO) levels to achieve large open circuit voltage (Voc) values. A promising strategy to tailor the photophysical properties and energy levels via covalently attaching electron donor and acceptor pendants on PTs backbone has attracted much attention recently. The geometry, electron-donating capacity, and composition of conjugated pendants are supposed to be the crucial factors in adjusting the conformation, energy levels, and photovoltaic performance of PTs. This review will go over the most recent approaches that enable researchers to obtain in-depth information in the development of PTs comprising conjugated pendants for PSCs. PMID:28788575

The improved efficiency of low molecular weight organic solar cells doped with a Cu(I) triplet material

NASA Astrophysics Data System (ADS)

Su, Bin; Gao, Lin; Li, Xiuying; Che, Guangbo; Zhu, Enwei; Wang, Bo; Yan, Yongsheng

2016-08-01

We developed a method to improve the performance of the copper phthalocyanine (CuPc)/fullerene (C60) organic solar cells (OSCs) by doping CuPc with a long triplet lifetime material. By doping [Cu(bis[2-(diphenylphosphino)phenyl]ether)(benzo[i]dipyrido[3,2-a:2',3'-c]phenazine)]BF4 (CuDB) into CuPc, the enhanced short-circuit current density ( J SC) of 6.213 mA/cm2, open-circuit voltage ( V OC) of 0.39 V and a peak power conversion efficiency (PCE) of 0.92% compared to 0.79% of the standard CuPc/C60 OSCs are achieved under 1 sun AM 1.5 G illumination at an intensity of 100 mW/cm2. The performance improvement is mainly attributed to the long triplet lifetime of CuDB (τ = 70.05 μs) which leads to more effective exciton dissociation.

Operating Mechanisms of Mesoscopic Perovskite Solar Cells through Impedance Spectroscopy and J-V Modeling.

PubMed

Zarazúa, Isaac; Sidhik, Siraj; Lopéz-Luke, Tzarara; Esparza, Diego; De la Rosa, Elder; Reyes-Gomez, Juan; Mora-Seró, Iván; Garcia-Belmonte, Germà

2017-12-21

The performance of perovskite solar cell (PSC) is highly sensitive to deposition conditions, the substrate, humidity, and the efficiency of solvent extraction. However, the physical mechanism involved in the observed changes of efficiency with different deposition conditions has not been elucidated yet. In this work, PSCs were fabricated by the antisolvent deposition (AD) and recently proposed air-extraction antisolvent (AAD) process. Impedance analysis and J-V curve fitting were used to analyze the photogeneration, charge transportation, recombination, and leakage properties of PSCs. It can be elucidated that the improvement in morphology of perovskite film promoted by AAD method leads to increase in light absorption, reduction in recombination sites, and interstitial defects, thus enhancing the short-circuit current density, open-circuit voltage, and fill factor. This study will open up doors for further improvement of device and help in understanding its physical mechanism and its relation to the deposition methods.

Ferroelectric photovoltaic properties in doubly substituted (Bi0.9La0.1)(Fe0.97Ta0.03)O3 thin films

NASA Astrophysics Data System (ADS)

Katiyar, R. K.; Sharma, Y.; Barrionuevo, D.; Kooriyattil, S.; Pavunny, S. P.; Young, J. S.; Morell, G.; Weiner, B. R.; Katiyar, R. S.; Scott, J. F.

2015-02-01

Doubly substituted [Bi0.9La0.1][Fe0.97Ta0.03]O3 (BLFTO) films were fabricated on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition. The ferroelectric photovoltaic properties of ZnO:Al/BLFTO/Pt thin film capacitor structures were evaluated under white light illumination. The open circuit voltage and short circuit current density were observed to be ˜0.20 V and ˜1.35 mA/cm2, respectively. The band gap of the films was determined to be ˜2.66 eV, slightly less than that of pure BiFeO3 (2.67 eV). The PV properties of BLFTO thin films were also studied for various pairs of planar electrodes in different directions in polycrystalline thin films.

The need for control of magnetic parameters for energy efficient performance of magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Farhat, I. A. H.; Gale, E.; Alpha, C.; Isakovic, A. F.

2017-07-01

Optimizing energy performance of Magnetic Tunnel Junctions (MTJs) is the key for embedding Spin Transfer Torque-Random Access Memory (STT-RAM) in low power circuits. Due to the complex interdependencies of the parameters and variables of the device operating energy, it is important to analyse parameters with most effective control of MTJ power. The impact of threshold current density, Jco , on the energy and the impact of HK on Jco are studied analytically, following the expressions that stem from Landau-Lifshitz-Gilbert-Slonczewski (LLGS-STT) model. In addition, the impact of other magnetic material parameters, such as Ms , and geometric parameters such as tfree and λ is discussed. Device modelling study was conducted to analyse the impact at the circuit level. Nano-magnetism simulation based on NMAGTM package was conducted to analyse the impact of controlling HK on the switching dynamics of the film.

Primary lithium-thionyl chloride cell evaluation

NASA Astrophysics Data System (ADS)

Zolla, A. E.; Waterhouse, R.; Debiccari, D.; Griffin, G. L.

1980-08-01

A test program was conducted to evaluate the Altus 1350AH cell performance against the Minuteman Survival Ground Power requirements. Twelve cells of the 17 inch diameter, 1-3/8 inch heights were fabricated and tested during this study. Under discharge rates varying from C/100 to C/400 at ambient temperature, the volumetric and gravimetric energy density performance requirements of 15 watt hours per cubic inch and 150 watt hours per pound were exceeded in all cases. All other performance requirements of voltage, current, configuration, capacity volume, weight, electrolyte leakage (none), and maintainability (none required), were met or exceeded. The abuse testing demonstrated the Altus Cell's ability to safely withstand short circuit by external shorting, short circuit by penetration with a conductive object, forced discharge, and forced charging of a cell. Disposal of discharged cells by incineration is an environmentally safe and efficient method of disposal.

Controlled data storage for non-volatile memory cells embedded in nano magnetic logic

NASA Astrophysics Data System (ADS)

Riente, Fabrizio; Ziemys, Grazvydas; Mattersdorfer, Clemens; Boche, Silke; Turvani, Giovanna; Raberg, Wolfgang; Luber, Sebastian; Breitkreutz-v. Gamm, Stephan

2017-05-01

Among the beyond-CMOS technologies, perpendicular Nano Magnetic Logic (pNML) is a promising candidate due to its low power consumption, its non-volatility and its monolithic 3D integrability, which makes it possible to integrate memory and logic into the same device by exploiting the interaction of bi-stable nanomagnets with perpendicular magnetic anisotropy. Logic computation and signal synchronization are achieved by focus ion beam irradiation and by pinning domain walls in magnetic notches. However, in realistic circuits, the information storage and their read-out are crucial issues, often ignored in the exploration of beyond-CMOS devices. In this paper we address these issues by experimentally demonstrating a pNML memory element, whose read and write operations can be controlled by two independent pulsed currents. Our results prove the correct behavior of the proposed structure that enables high density memory embedded in the logic plane of 3D-integrated pNML circuits.

Adult-born neurons modify excitatory synaptic transmission to existing neurons

PubMed Central

Adlaf, Elena W; Vaden, Ryan J; Niver, Anastasia J; Manuel, Allison F; Onyilo, Vincent C; Araujo, Matheus T; Dieni, Cristina V; Vo, Hai T; King, Gwendalyn D; Wadiche, Jacques I; Overstreet-Wadiche, Linda

2017-01-01

Adult-born neurons are continually produced in the dentate gyrus but it is unclear whether synaptic integration of new neurons affects the pre-existing circuit. Here we investigated how manipulating neurogenesis in adult mice alters excitatory synaptic transmission to mature dentate neurons. Enhancing neurogenesis by conditional deletion of the pro-apoptotic gene Bax in stem cells reduced excitatory postsynaptic currents (EPSCs) and spine density in mature neurons, whereas genetic ablation of neurogenesis increased EPSCs in mature neurons. Unexpectedly, we found that Bax deletion in developing and mature dentate neurons increased EPSCs and prevented neurogenesis-induced synaptic suppression. Together these results show that neurogenesis modifies synaptic transmission to mature neurons in a manner consistent with a redistribution of pre-existing synapses to newly integrating neurons and that a non-apoptotic function of the Bax signaling pathway contributes to ongoing synaptic refinement within the dentate circuit. DOI: http://dx.doi.org/10.7554/eLife.19886.001 PMID:28135190

Comparison of immersed liquid and air cooling of NASA's Airborne Information Management System

NASA Technical Reports Server (NTRS)

Hoadley, A. W.; Porter, A. J.

1992-01-01

The Airborne Information Management System (AIMS) is currently under development at NASA Dryden Flight Research Facility. The AIMS is designed as a modular system utilizing surface mounted integrated circuits in a high-density configuration. To maintain the temperature of the integrated circuits within manufacturer's specifications, the modules are to be filled with Fluorinert FC-72. Unlike ground based liquid cooled computers, the extreme range of the ambient pressures experienced by the AIMS requires the FC-72 be contained in a closed system. This forces the latent heat absorbed during the boiling to be released during the condensation that must take within the closed module system. Natural convection and/or pumping carries the heat to the outer surface of the AIMS module where the heat transfers to the ambient air. This paper will present an evaluation of the relative effectiveness of immersed liquid cooling and air cooling of the Airborne Information Management System.

Chalcogenide glass-ceramic with self-organized heterojunctions: application to photovoltaic solar cells

NASA Astrophysics Data System (ADS)

Zhang, Xianghua; Korolkov, Ilia; Fan, Bo; Cathelinaud, Michel; Ma, Hongli; Adam, Jean-Luc; Merdrignac, Odile; Calvez, Laurent; Lhermite, Hervé; Brizoual, Laurent Le; Pasquinelli, Marcel; Simon, Jean-Jacques

2018-03-01

In this work, we present for the first time the concept of chalcogenide glass-ceramic for photovoltaic applications with the GeSe2-Sb2Se3-CuI system. It has been demonstrated that thin films, deposited with the sputtering technique, are amorphous and can be crystallized with appropriate heat treatment. The thin film glass-ceramic behaves as a p-type semiconductor, even if it contains p-type Cu2GeSe3 and n-type Sb2Se3. The conductivity of Sb2Se3 has been greatly improved by appropriate iodine doping. The first photovoltaic solar cells based on the association of iodine-doped Sb2Se3 and the glass-ceramic thin films give a short-circuit current density JSC of 10 mA/cm2 and an open-circuit voltage VOC of 255 mV, with a power conversion efficiency of about 0.9%.

Hole-transport material variation in fully vacuum deposited perovskite solar cells

NASA Astrophysics Data System (ADS)

Polander, Lauren E.; Pahner, Paul; Schwarze, Martin; Saalfrank, Matthias; Koerner, Christian; Leo, Karl

2014-08-01

This work addresses the effect of energy level alignment between the hole-transporting material and the active layer in vacuum deposited, planar-heterojunction CH3NH3PbIx-3Clx perovskite solar cells. Through a series of hole-transport materials, with conductivity values set using controlled p-doping of the layer, we correlate their ionization potentials with the open-circuit voltage of the device. With ionization potentials beyond 5.3 eV, a substantial decrease in both current density and voltage is observed, which highlights the delicate energetic balance between driving force for hole-extraction and maximizing the photovoltage. In contrast, when an optimal ionization potential match is found, the open-circuit voltage can be maximized, leading to power conversion efficiencies of up to 10.9%. These values are obtained with hole-transport materials that differ from the commonly used Spiro-MeO-TAD and correspond to a 40% performance increase versus this reference.

Comparison of immersed liquid and air cooling of NASA's Airborne Information Management System

NASA Astrophysics Data System (ADS)

Hoadley, A. W.; Porter, A. J.

1992-07-01

The Airborne Information Management System (AIMS) is currently under development at NASA Dryden Flight Research Facility. The AIMS is designed as a modular system utilizing surface mounted integrated circuits in a high-density configuration. To maintain the temperature of the integrated circuits within manufacturer's specifications, the modules are to be filled with Fluorinert FC-72. Unlike ground based liquid cooled computers, the extreme range of the ambient pressures experienced by the AIMS requires the FC-72 be contained in a closed system. This forces the latent heat absorbed during the boiling to be released during the condensation that must take within the closed module system. Natural convection and/or pumping carries the heat to the outer surface of the AIMS module where the heat transfers to the ambient air. This paper will present an evaluation of the relative effectiveness of immersed liquid cooling and air cooling of the Airborne Information Management System.

Surface plasmon effect in electrodeposited diamond-like carbon films for photovoltaic application

NASA Astrophysics Data System (ADS)

Ghosh, B.; Ray, Sekhar C.; Espinoza-González, Rodrigo; Villarroel, Roberto; Hevia, Samuel A.; Alvarez-Vega, Pedro

2018-04-01

Diamond-like carbon (DLC) films and nanocrystalline silver particles containing diamond-like carbon (DLC:Ag) films were electrodeposited on n-type silicon substrate (n-Si) to prepare n-Si/DLC and n-Si/DLC:Ag heterostructures for photovoltaic (PV) applications. Surface plasmon resonance (SPR) effect in this cell structure and its overall performance have been studied in terms of morphology, optical absorption, current-voltage characteristics, capacitance-voltage characteristics, band diagram and external quantum efficiency measurements. Localized surface plasmon resonance effect of silver nanoparticles (Ag NPs) in n-Si/DLC:Ag PV structure exhibited an enhancement of ∼28% in short circuit current density (JSC), which improved the overall efficiency of the heterostructures.

PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Talapin, Dmitri V.; Murray, Christopher B.

2005-10-01

Initially poorly conducting PbSe nanocrystal solids (quantum dot arrays or superlattices) can be chemically ``activated'' to fabricate n- and p-channel field effect transistors with electron and hole mobilities of 0.9 and 0.2 square centimeters per volt-second, respectively; with current modulations of about 103 to 104; and with current density approaching 3 × 104 amperes per square centimeter. Chemical treatments engineer the interparticle spacing, electronic coupling, and doping while passivating electronic traps. These nanocrystal field-effect transistors allow reversible switching between n- and p-transport, providing options for complementary metal oxide semiconductor circuits and enabling a range of low-cost, large-area electronic, optoelectronic, thermoelectric, and sensing applications.

Middle Atmosphere Electrodynamics During a Thunderstorm

NASA Technical Reports Server (NTRS)

Croskey, Charles L.

1996-01-01

Rocket-based instrumentation investigations of middle atmospheric electrodynamics during thunderstorms were conducted in coordination with balloon-measurements at Wallops Island, Virginia. Middle atmosphere electrodynamics and energy coupling are of particular importance to associated electrical processes at lower and higher altitudes. Objectives of this research effort included: (1) investigation of thunderstorm effects on middle atmosphere electrical structure, including spatial and temporal dependence; (2) characterization of electric field transients and the associated energy deposited at various altitudes; (3) evaluation of the vertical Maxwell current density over a thunderstorm to study the coupling of energy to higher altitudes; and (4) investigation of the coupling of energy to the ionosphere and the current supplied to the 'global circuit.'

30 CFR 75.900-4 - Testing, examination, and maintenance of circuit breakers; record.

Code of Federal Regulations, 2011 CFR

2011-07-01

... circuits serving three-phase alternating current equipment used in the mine. Such record shall be kept in a... Underground Low- and Medium-Voltage Alternating Current Circuits § 75.900-4 Testing, examination, and...

30 CFR 75.900-4 - Testing, examination, and maintenance of circuit breakers; record.

Code of Federal Regulations, 2010 CFR

2010-07-01

... circuits serving three-phase alternating current equipment used in the mine. Such record shall be kept in a... Underground Low- and Medium-Voltage Alternating Current Circuits § 75.900-4 Testing, examination, and...

46 CFR 111.30-17 - Protection of instrument circuits.

Code of Federal Regulations, 2011 CFR

2011-10-01

... circuit of a current transformer must not be fused, and the circuit from a current transformer to a device that is not in the switchboard must have a high voltage protector to short the transformer during an...

46 CFR 111.30-17 - Protection of instrument circuits.

Code of Federal Regulations, 2014 CFR

2014-10-01

... circuit of a current transformer must not be fused, and the circuit from a current transformer to a device that is not in the switchboard must have a high voltage protector to short the transformer during an...

46 CFR 111.30-17 - Protection of instrument circuits.

Code of Federal Regulations, 2012 CFR

2012-10-01

... circuit of a current transformer must not be fused, and the circuit from a current transformer to a device that is not in the switchboard must have a high voltage protector to short the transformer during an...

46 CFR 111.30-17 - Protection of instrument circuits.

Code of Federal Regulations, 2010 CFR

2010-10-01

... circuit of a current transformer must not be fused, and the circuit from a current transformer to a device that is not in the switchboard must have a high voltage protector to short the transformer during an...

46 CFR 111.30-17 - Protection of instrument circuits.

Code of Federal Regulations, 2013 CFR

2013-10-01

... circuit of a current transformer must not be fused, and the circuit from a current transformer to a device that is not in the switchboard must have a high voltage protector to short the transformer during an...

Automatic method of measuring silicon-controlled-rectifier holding current

NASA Technical Reports Server (NTRS)

Maslowski, E. A.

1972-01-01

Development of automated silicon controlled rectifier circuit for measuring minimum anode current required to maintain rectifiers in conducting state is discussed. Components of circuit are described and principles of operation are explained. Illustration of circuit is provided.

Tailored donor-acceptor polymers with an A-D1-A-D2 structure: controlling intermolecular interactions to enable enhanced polymer photovoltaic devices.

PubMed

Qin, Tianshi; Zajaczkowski, Wojciech; Pisula, Wojciech; Baumgarten, Martin; Chen, Ming; Gao, Mei; Wilson, Gerry; Easton, Christopher D; Müllen, Klaus; Watkins, Scott E

2014-04-23

Extensive efforts have been made to develop novel conjugated polymers that give improved performance in organic photovoltaic devices. The use of polymers based on alternating electron-donating and electron-accepting units not only allows the frontier molecular orbitals to be tuned to maximize the open-circuit voltage of the devices but also controls the optical band gap to increase the number of photons absorbed and thus modifies the other critical device parameter-the short circuit current. In fact, varying the nonchromophoric components of a polymer is often secondary to the efforts to adjust the intermolecular aggregates and improve the charge-carrier mobility. Here, we introduce an approach to polymer synthesis that facilitates simultaneous control over both the structural and electronic properties of the polymers. Through the use of a tailored multicomponent acceptor-donor-acceptor (A-D-A) intermediate, polymers with the unique structure A-D1-A-D2 can be prepared. This approach enables variations in the donor fragment substituents such that control over both the polymer regiochemistry and solubility is possible. This control results in improved intermolecular π-stacking interactions and therefore enhanced charge-carrier mobility. Solar cells using the A-D1-A-D2 structural polymer show short-circuit current densities that are twice that of the simple, random analogue while still maintaining an identical open-circuit voltage. The key finding of this work is that polymers with an A-D1-A-D2 structure offer significant performance benefits over both regioregular and random A-D polymers. The chemical synthesis approach that enables the preparation of A-D1-A-D2 polymers therefore represents a promising new route to materials for high-efficiency organic photovoltaic devices.

A low noise and high precision linear power supply with thermal foldback protection.

PubMed

Carniti, P; Cassina, L; Gotti, C; Maino, M; Pessina, G

2016-05-01

A low noise and high precision linear power supply was designed for use in rare event search experiments with macrobolometers. The circuit accepts at the input a "noisy" dual supply voltage up to ±15 V and gives at the output precise, low noise, and stable voltages that can be set between ±3.75 V and ±12.5 V in eight 1.25 V steps. Particular care in circuit design, component selection, and proper filtering results in a noise spectral density of 50nV/Hz at 1 Hz and 20nV/Hz white when the output is set to ±5 V. This corresponds to 125 nV RMS (0.8 μV peak to peak) between 0.1 Hz and 10 Hz, and 240 nV RMS (1.6 μV peak to peak) between 0.1 Hz and 100 Hz. The power supply rejection ratio (PSRR) of the circuit is 100 dB at low frequency, and larger than 40 dB up to high frequency, thanks to a proper compensation design. Calibration allows to reach a precision in the absolute value of the output voltage of ±70 ppm, or ±350 μV at ±5 V, and to reduce thermal drifts below ±1 ppm/(∘)C in the expected operating range. The maximum peak output current is about 6 A from each output. An original foldback protection scheme was developed that dynamically limits the maximum output current to keep the temperature of the output transistors within their safe operating range. An add-on card based on an ARM Cortex-M3 microcontroller is devoted to the monitoring and control of all circuit functionalities and provides remote communication via CAN bus.

Active shunt capacitance cancelling oscillator circuit

DOEpatents

Wessendorf, Kurt O.

2003-09-23

An oscillator circuit is disclosed which can be used to produce oscillation using a piezoelectric crystal, with a frequency of oscillation being largely independent of any shunt capacitance associated with the crystal (i.e. due to electrodes on the surfaces of the crystal and due to packaging and wiring for the crystal). The oscillator circuit is based on a tuned gain stage which operates the crystal at a frequency, f, near a series resonance frequency, f.sub.S. The oscillator circuit further includes a compensation circuit that supplies all the ac current flow through the shunt resistance associated with the crystal so that this ac current need not be supplied by the tuned gain stage. The compensation circuit uses a current mirror to provide the ac current flow based on the current flow through a reference capacitor that is equivalent to the shunt capacitance associated with the crystal. The oscillator circuit has applications for driving piezoelectric crystals for sensing of viscous, fluid or solid media by detecting a change in the frequency of oscillation of the crystal and a resonator loss which occur from contact of an exposed surface of the crystal by the viscous, fluid or solid media.

Module Five: Relationships of Current, Voltage, and Resistance; Basic Electricity and Electronics Individualized Learning System.

ERIC Educational Resources Information Center

Bureau of Naval Personnel, Washington, DC.

This module covers the relationships between current and voltage; resistance in a series circuit; how to determine the values of current, voltage, resistance, and power in resistive series circuits; the effects of source internal resistance; and an introduction to the troubleshooting of series circuits. This module is divided into five lessons:…

Method and apparatus for current-output peak detection

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Geronimo, Gianluigi

2017-01-24

A method and apparatus for a current-output peak detector. A current-output peak detector circuit is disclosed and works in two phases. The peak detector circuit includes switches to switch the peak detector circuit from the first phase to the second phase upon detection of the peak voltage of an input voltage signal. The peak detector generates a current output with a high degree of accuracy in the second phase.

Fault tolerant system based on IDDQ testing

NASA Astrophysics Data System (ADS)

Guibane, Badi; Hamdi, Belgacem; Mtibaa, Abdellatif; Bensalem, Brahim

2018-06-01

Offline test is essential to ensure good manufacturing quality. However, for permanent or transient faults that occur during the use of the integrated circuit in an application, an online integrated test is needed as well. This procedure should ensure the detection and possibly the correction or the masking of these faults. This requirement of self-correction is sometimes necessary, especially in critical applications that require high security such as automotive, space or biomedical applications. We propose a fault-tolerant design for analogue and mixed-signal design complementary metal oxide (CMOS) circuits based on the quiescent current supply (IDDQ) testing. A defect can cause an increase in current consumption. IDDQ testing technique is based on the measurement of power supply current to distinguish between functional and failed circuits. The technique has been an effective testing method for detecting physical defects such as gate-oxide shorts, floating gates (open) and bridging defects in CMOS integrated circuits. An architecture called BICS (Built In Current Sensor) is used for monitoring the supply current (IDDQ) of the connected integrated circuit. If the measured current is not within the normal range, a defect is signalled and the system switches connection from the defective to a functional integrated circuit. The fault-tolerant technique is composed essentially by a double mirror built-in current sensor, allowing the detection of abnormal current consumption and blocks allowing the connection to redundant circuits, if a defect occurs. Spices simulations are performed to valid the proposed design.

Optimization of Magneto-Rheological Damper for Maximizing Magnetic Flux Density in the Fluid Flow Gap Through FEA and GA Approaches

NASA Astrophysics Data System (ADS)

Krishna, Hemanth; Kumar, Hemantha; Gangadharan, Kalluvalappil

2017-08-01

A magneto rheological (MR) fluid damper offers cost effective solution for semiactive vibration control in an automobile suspension. The performance of MR damper is significantly depends on the electromagnetic circuit incorporated into it. The force developed by MR fluid damper is highly influenced by the magnetic flux density induced in the fluid flow gap. In the present work, optimization of electromagnetic circuit of an MR damper is discussed in order to maximize the magnetic flux density. The optimization procedure was proposed by genetic algorithm and design of experiments techniques. The result shows that the fluid flow gap size less than 1.12 mm cause significant increase of magnetic flux density.

Device for testing continuity and/or short circuits in a cable

NASA Technical Reports Server (NTRS)

Hayhurst, Arthur R. (Inventor)

1995-01-01

A device for testing current paths is attachable to a conductor. The device automatically checks the current paths of the conductor for continuity of a center conductor, continuity of a shield and a short circuit between the shield and the center conductor. The device includes a pair of connectors and a circuit to provide for testing of the conductive paths of the cable. The pair of connectors electrically connects the conductive paths of a cable to be tested with the circuit paths of the circuit. The circuit paths in the circuit include indicators to simultaneously indicate the results of the testing.

High density electrical card connector system

DOEpatents

Haggard, J. Eric; Trotter, Garrett R.

2000-01-01

An electrical circuit board card connection system is disclosed which comprises a wedge-operated locking mechanism disposed along an edge portion of the printed circuit board. An extrusion along the edge of the circuit board mates with an extrusion fixed to the card cage having a plurality of electrical connectors. The connection system allows the connectors to be held away from the circuit board during insertion/extraction and provides a constant mating force once the circuit board is positioned and the wedge inserted. The disclosed connection system is a simple solution to the need for a greater number of electrical signal connections.

Occupational exposure to electric fields and induced currents associated with 400 kV substation tasks from different service platforms.

PubMed

Korpinen, Leena H; Elovaara, Jarmo A; Kuisti, Harri A

2011-01-01

The aim of the study was to investigate the occupational exposure to electric fields, average current densities, and average total contact currents at 400 kV substation tasks from different service platforms (main transformer inspection, maintenance of operating device of disconnector, maintenance of operating device of circuit breaker). The average values are calculated over measured periods (about 2.5 min). In many work tasks, the maximum electric field strengths exceeded the action values proposed in the EU Directive 2004/40/EC, but the average electric fields (0.2-24.5 kV/m) were at least 40% lower than the maximum values. The average current densities were 0.1-2.3 mA/m² and the average total contact currents 2.0-143.2 µA, that is, clearly less than the limit values of the EU Directive. The average values of the currents in head and contact currents were 16-68% lower than the maximum values when we compared the average value from all cases in the same substation. In the future it is important to pay attention to the fact that the action and limit values of the EU Directive differ significantly. It is also important to take into account that generally, the workers' exposure to the electric fields, current densities, and total contact currents are obviously lower if we use the average values from a certain measured time period (e.g., 2.5 min) than in the case where exposure is defined with only the help of the maximum values. © 2010 Wiley-Liss, Inc.

Maximizing the short circuit current of organic solar cells by partial decoupling of electrical and optical properties

NASA Astrophysics Data System (ADS)

Qarony, Wayesh; Hossain, Mohammad I.; Jovanov, Vladislav; Knipp, Dietmar; Tsang, Yuen Hong

2018-03-01

The partial decoupling of electronic and optical properties of organic solar cells allows for realizing solar cells with increased short circuit current and energy conversion efficiency. The proposed device consists of an organic solar cell conformally prepared on the surface of an array of single and double textured pyramids. The device geometry allows for increasing the optical thickness of the organic solar cell, while the electrical thickness is equal to the nominal thickness of the solar cell. By increasing the optical thickness of the solar cell, the short circuit current is distinctly increased. The quantum efficiency and short circuit current are determined using finite-difference time-domain simulations of the 3D solar cell structure. The influence of different solar cell designs on the quantum efficiency and short circuit current is discussed and optimal device dimensions are proposed.

Atomic memory access hardware implementations

DOEpatents

Ahn, Jung Ho; Erez, Mattan; Dally, William J

2015-02-17

Atomic memory access requests are handled using a variety of systems and methods. According to one example method, a data-processing circuit having an address-request generator that issues requests to a common memory implements a method of processing the requests using a memory-access intervention circuit coupled between the generator and the common memory. The method identifies a current atomic-memory access request from a plurality of memory access requests. A data set is stored that corresponds to the current atomic-memory access request in a data storage circuit within the intervention circuit. It is determined whether the current atomic-memory access request corresponds to at least one previously-stored atomic-memory access request. In response to determining correspondence, the current request is implemented by retrieving data from the common memory. The data is modified in response to the current request and at least one other access request in the memory-access intervention circuit.

Effect of Ground Layer Patterns with Slits on Conducted Noise Currents from Printed Circuit Board

NASA Astrophysics Data System (ADS)

Maeno, Tsuyoshi; Unou, Takanori; Ichikawa, Kouji; Fujiwara, Osamu

Electromagnetic disturbances for vehicle-mounted radios can be caused by conducted noise currents that flows out from electronic equipment for vehicles to wire-harnesses. In this paper, for reducing the conducted noise currents from electronic equipment for vehicles, we made a simulation and experiment on how ground patterns affect the noise currents from three-layer printed circuit boards (PCBs) with slit-types and plane-type ground patterns. As a result, we could confirm that slits on a ground pattern allow conducted noise currents to flow out from PCBs to wire-harnesses. For the PCBs with plane-type ground and one of three slit-type patterns, on the other hand, both the simulation and examination showed that resonance phenomena occur at unexpected low-frequencies. A circuit analysis revealed that the above phenomena can be caused by the imbalance of a bridge circuit consisting of the trace circuits on the PCB.

A Readout Integrated Circuit (ROIC) employing self-adaptive background current compensation technique for Infrared Focal Plane Array (IRFPA)

NASA Astrophysics Data System (ADS)

Zhou, Tong; Zhao, Jian; He, Yong; Jiang, Bo; Su, Yan

2018-05-01

A novel self-adaptive background current compensation circuit applied to infrared focal plane array is proposed in this paper, which can compensate the background current generated in different conditions. Designed double-threshold detection strategy is to estimate and eliminate the background currents, which could significantly reduce the hardware overhead and improve the uniformity among different pixels. In addition, the circuit is well compatible to various categories of infrared thermo-sensitive materials. The testing results of a 4 × 4 experimental chip showed that the proposed circuit achieves high precision, wide application and high intelligence. Tape-out of the 320 × 240 readout circuit, as well as the bonding, encapsulation and imaging verification of uncooled infrared focal plane array, have also been completed.

A High Performance H2-Cl2 Fuel Cell for Space Power Applications

NASA Technical Reports Server (NTRS)

Anderson, Everett B.; Taylor, E. Jennings; Wilemski, Gerald; Gelb, Alan

1993-01-01

NASA has numerous airborne/spaceborne applications for which high power and energy density power sources are needed. The proton exchange membrane fuel cell (PEMFC) is an attractive candidate for such a power source. PEMFC's offer many advantages for airborne/spaceborne applications. They have high power and energy densities, convert fuel to electrical power with high efficiency at both part and full load, and can rapidly startup and shutdown. In addition, PEMFC's are lightweight and operate silently. A significant impediment to the attainment of very high power and energy densities by PEMFC's is their current exclusive reliance on oxygen as the oxidant. Conventional PEMFC's oxidize hydrogen at the anode and reduce oxygen at the cathode. The electrode kinetics of oxygen reduction are known to be highly irreversible, incurring large overpotential losses. In addition, the modest open circuit potential of 1.2V for the H2-O2 fuel cell is unattainable due to mixed potential effects at the oxygen electrode. Because of the high overpotential losses, cells using H2 and O2 are capable of achieving high current densities only at very low cell voltages, greatly curtailing their power output. Based on experimental work on chlorine reduction in a gas diffusion electrode, we believe significant increases in both the energy and power densities of PEMFC systems can be achieved by employing chlorine as an alternative oxidant.

CUGatesDensity—Quantum circuit analyser extended to density matrices

NASA Astrophysics Data System (ADS)

Loke, T.; Wang, J. B.

2013-12-01

CUGatesDensity is an extension of the original quantum circuit analyser CUGates (Loke and Wang, 2011) [7] to provide explicit support for the use of density matrices. The new package enables simulation of quantum circuits involving statistical ensemble of mixed quantum states. Such analysis is of vital importance in dealing with quantum decoherence, measurements, noise and error correction, and fault tolerant computation. Several examples involving mixed state quantum computation are presented to illustrate the use of this package. Catalogue identifier: AEPY_v1_0 Program summary URL:http://cpc.cs.qub.ac.uk/summaries/AEPY_v1_0.html Program obtainable from: CPC Program Library, Queen’s University, Belfast, N. Ireland Licensing provisions: Standard CPC licence, http://cpc.cs.qub.ac.uk/licence/licence.html No. of lines in distributed program, including test data, etc.: 5368 No. of bytes in distributed program, including test data, etc.: 143994 Distribution format: tar.gz Programming language: Mathematica. Computer: Any computer installed with a copy of Mathematica 6.0 or higher. Operating system: Any system with a copy of Mathematica 6.0 or higher installed. Classification: 4.15. Nature of problem: To simulate arbitrarily complex quantum circuits comprised of single/multiple qubit and qudit quantum gates with mixed state registers. Solution method: A density matrix representation for mixed states and a state vector representation for pure states are used. The construct is based on an irreducible form of matrix decomposition, which allows a highly efficient implementation of general controlled gates with multiple conditionals. Running time: The examples provided in the notebook CUGatesDensity.nb take approximately 30 s to run on a laptop PC.

Low cost electronic ultracapacitor interface technique to provide load leveling of a battery for pulsed load or motor traction drive applications

DOEpatents

King, Robert Dean; DeDoncker, Rik Wivina Anna Adelson

1998-01-01

A battery load leveling arrangement for an electrically powered system in which battery loading is subject to intermittent high current loading utilizes a passive energy storage device and a diode connected in series with the storage device to conduct current from the storage device to the load when current demand forces a drop in battery voltage. A current limiting circuit is connected in parallel with the diode for recharging the passive energy storage device. The current limiting circuit functions to limit the average magnitude of recharge current supplied to the storage device. Various forms of current limiting circuits are disclosed, including a PTC resistor coupled in parallel with a fixed resistor. The current limit circuit may also include an SCR for switching regenerative braking current to the device when the system is connected to power an electric motor.

Stack developments in a kW class all vanadium mixed acid redox flow battery at the Pacific Northwest National Laboratory

DOE PAGES

Reed, David M.; Thomsen, Edwin C.; Li, Bin; ...

2015-11-21

Over the past several years, efforts have been focused on improving the performance of kW class stacks with increasing current density. The influence of the Nafion membrane resistance, an interdigitated design to reduce the pressure drop in the electrolyte circuit, the temperature of the electrolyte, and the electrode structure will be discussed and correlated to the electrical performance. Furthermore, improvements to the stack energy efficiency and how those translate to the overall system efficiency will also be discussed.

An exact analysis of a rectangular plate piezoelectric generator.

PubMed

Yang, Jiashi; Chen, Ziguang; Hu, Yuantai

2007-01-01

We study thickness-twist vibration of a finite, piezoelectric plate of polarized ceramics or 6-mm crystals driven by surface mechanical loads. An exact solution from the three-dimensional equations of piezoelectricity is obtained. The plate is properly electroded and connected to a circuit such that an electric output is generated. The structure analyzed represents a piezoelectric generator for converting mechanical energy to electrical energy. Analytical expressions for the output voltage, current, power, efficiency, and power density are given. The basic behaviors of the generator are shown by numerical results.

Piezoelectric and pyroelectric properties of DL-alanine and L-lysine amino-acid polymer nanofibres

NASA Astrophysics Data System (ADS)

de Matos Gomes, Etelvina; Viseu, Teresa; Belsley, Michael; Almeida, Bernardo; Costa, Maria Margarida R.; Rodrigues, Vitor H.; Isakov, Dmitry

2018-04-01

The piezoelectric and pyroelectric properties of electrospun polyethylene oxide nanofibres embedded with polar amino acids DL-alanine and L-lysine hemihydrate are reported. A high pyroelectric coefficient of 150 μC m‑2 K‑1 was measured for L-lysine hemihydrate and piezoelectric current densities up to 7 μA m‑2 were obtained for the nanofibres. The study reveals a potential for polymer amino-acid nanofibres to be used as biocompatible energy harvesters for autonomous circuit applications like in implantable electronics.

Notepad-like triboelectric generator for efficiently harvesting low-velocity motion energy by interconversion between kinetic energy and elastic potential energy.

PubMed

Liu, Guanlin; Leng, Qiang; Lian, Jiawei; Guo, Hengyu; Yi, Xi; Hu, Chenguo

2015-01-21

Great attention has been paid to nanogenerators that harvest energy from ambient environments lately. In order to give considerable output current, most nanogenerators require high-velocity motion that in most cases can hardly be provided in our daily life. Here we report a notepad-like triboelectric generator (NTEG), which uses simple notepad-like structure to generate elastic deformation so as to turn a low-velocity kinetic energy into high-velocity kinetic energy through the conversion of elastic potential energy. Therefore, the NTEG can achieve high current output under low-velocity motion, which completely distinguishes it from tribogenerators previously reported. The factors that may affect the output performance are explored, including the number of slices, active length of slice, press speed, and vertical displacement. In addition, the working mechanism is systematically studied, indicating that the efficiency of the generator can be greatly enhanced by interconversion between kinetic energy and elastic potential energy. The short-circuit current, the open-circuit voltage, and power density are 205 μA and 470 V and 9.86 W/m(2), respectively, which is powerful enough to light up hundreds of light-emitting diodes (LEDs) and charge a commercial capacitor. Besides, NTEGs have been successfully applied to a self-powered door monitor.

To enhance the efficiency of a power supply circuit by the use of Fe-P-B-Nb-type ultralow loss glassy metal core

NASA Astrophysics Data System (ADS)

Matsumoto, H.; Urata, A.; Yamada, Y.; Makino, A.

2009-04-01

The inductor in a power supply is required to be capable of dealing satisfactorily with the high-current supply and to improve the power loss characteristic. A novel glassy metal powder with a chemical composition Fe77P7B13Nb3 features both a high saturated magnetic flux density of 1.3 T and a low coercive force of 2.0 A/m, which has a stable amorphous structure suitable for glassy metal composite cores. Hence there is no magnetic saturation even under a high-current supply, and it is confirmed to have significantly low magnetic loss resulting from the low coercive force. As a result of using the glassy metal alloy Fe77P7B13Nb3 powder in an inductor core, we have achieved improvement in power supply efficiency by up to roughly 2.0%. Moreover, the reduction in the standby power requirement by the improvement in the power supply efficiency in the low load current case, where the core loss occupies a high ratio in the entire loss, can be expected. Additionally, heat generation in a core is suppressed by using the low loss powder, and it becomes easy to design a temperature rise in the entire power supply circuit.

Hybrid high direct current circuit interrupter

DOEpatents

Rockot, Joseph H.; Mikesell, Harvey E.; Jha, Kamal N.

1998-01-01

A device and a method for interrupting very high direct currents (greater than 100,000 amperes) and simultaneously blocking high voltages (greater than 600 volts). The device utilizes a mechanical switch to carry very high currents continuously with low loss and a silicon controlled rectifier (SCR) to bypass the current around the mechanical switch while its contacts are separating. A commutation circuit, connected in parallel with the SCR, turns off the SCR by utilizing a resonant circuit to divert the SCR current after the switch opens.

Magnitude and behavior of cross-talk effects in multichannel electrophysiology experiments.

PubMed

Nelson, Matthew J; Valtcheva, Silvana; Venance, Laurent

2017-07-01

Modern neurophysiological experiments frequently involve multiple channels separated by very small distances. A unique methodological concern for multiple-electrode experiments is that of capacitive coupling (cross-talk) between channels. Yet the nature of the cross-talk recording circuit is not well known in the field, and the extent to which it practically affects neurophysiology experiments has never been fully investigated. Here we describe a simple electrical circuit model of simultaneous recording and stimulation with two or more channels and experimentally verify the model using ex vivo brain slice and in vivo whole-brain preparations. In agreement with the model, we find that cross-talk amplitudes increase nearly linearly with the impedance of a recording electrode and are larger for higher frequencies. We demonstrate cross-talk contamination of action potential waveforms from intracellular to extracellular channels, which is observable in part because of the different orders of magnitude between the channels. This contamination is electrode impedance-dependent and matches predictions from the model. We use recently published parameters to simulate cross-talk in high-density multichannel extracellular recordings. Cross-talk effectively spatially smooths current source density (CSD) estimates in these recordings and induces artefactual phase shifts where underlying voltage gradients occur; however, these effects are modest. We show that the effects of cross-talk are unlikely to affect most conclusions inferred from neurophysiology experiments when both originating and receiving electrode record signals of similar magnitudes. We discuss other types of experiments and analyses that may be susceptible to cross-talk, techniques for detecting and experimentally reducing cross-talk, and implications for high-density probe design. NEW & NOTEWORTHY We develop and experimentally verify an electrical circuit model describing cross-talk that necessarily occurs between two channels. Recorded cross-talk increased with electrode impedance and signal frequency. We recorded cross-talk contamination of spike waveforms from intracellular to extracellular channels. We simulated high-density multichannel extracellular recordings and demonstrate spatial smoothing and phase shifts that cross-talk enacts on CSD measurements. However, when channels record similar-magnitude signals, effects are modest and unlikely to affect most conclusions. Copyright © 2017 the American Physiological Society.

Critical Role of the Sorting Polymer in Carbon Nanotube-Based Minority Carrier Devices.

PubMed

Mallajosyula, Arun T; Nie, Wanyi; Gupta, Gautam; Blackburn, Jeffrey L; Doorn, Stephen K; Mohite, Aditya D

2016-12-27

A prerequisite for carbon nanotube-based optoelectronic devices is the ability to sort them into a pure semiconductor phase. One of the most common sorting routes is enabled through using specific wrapping polymers. Here we show that subtle changes in the polymer structure can have a dramatic influence on the figures of merit of a carbon nanotube-based photovoltaic device. By comparing two commonly used polyfluorenes (PFO and PFO-BPy) for wrapping (7,5) and (6,5) chirality SWCNTs, we demonstrate that they have contrasting effects on the device efficiency. We attribute this to the differences in their ability to efficiently transfer charge. Although PFO may act as an efficient interfacial layer at the anode, PFO-BPy, having the additional pyridine side groups, forms a high resistance layer degrading the device efficiency. By comparing PFO|C 60 and C 60 -only devices, we found that presence of a PFO layer at low optical densities resulted in the increase of all three solar cell parameters, giving nearly an order of magnitude higher efficiency over that of C 60 -only devices. In addition, with a relatively higher contribution to photocurrent from the PFO-C 60 interface, an open circuit voltage of 0.55 V was obtained for PFO-(7,5)-C 60 devices. On the other hand, PFO-BPy does not affect the open circuit voltage but drastically reduces the short circuit current density. These results indicate that the charge transport properties and energy levels of the sorting polymers have to be taken into account to fully understand their effect on carbon nanotube-based solar cells.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mallajosyula, Arun T.; Nie, Wanyi; Gupta, Gautam

A prerequisite for carbon nanotube-based optoelectronic devices is the ability to sort them into a pure semiconductor phase. One of the most common sorting routes is enabled through using specific wrapping polymers. Here we show that subtle changes in the polymer structure can have a dramatic influence on the figures of merit of a carbon nanotube-based photovoltaic device. By comparing two commonly used polyfluorenes (PFO and PFO-BPy) for wrapping (7,5) and (6,5) chirality SWCNTs, we demonstrate that they have contrasting effects on the device efficiency. We attribute this to the differences in their ability to efficiently transfer charge. Although PFOmore » may act as an efficient interfacial layer at the anode, PFO-BPy, having the additional pyridine side groups, forms a high resistance layer degrading the device efficiency. By comparing PFO|C 60 and C 60-only devices, we found that presence of a PFO layer at low optical densities resulted in the increase of all three solar cell parameters, giving nearly an order of magnitude higher efficiency over that of C 60-only devices. In addition, with a relatively higher contribution to photocurrent from the PFO-C 60 interface, an open circuit voltage of 0.55 V was obtained for PFO-(7,5)-C 60 devices. On the other hand, PFO-BPy does not affect the open circuit voltage but drastically reduces the short circuit current density. Lastly, these results indicate that the charge transport properties and energy levels of the sorting polymers have to be taken into account to fully understand their effect on carbon nanotube-based solar cells.« less

Investigation on porous MnO microsphere anode for lithium ion batteries

NASA Astrophysics Data System (ADS)

Zhong, Kaifu; Zhang, Bin; Luo, Shihai; Wen, Wen; Li, Hong; Huang, Xuejie; Chen, Liquan

MnO microspheres with and without carbon coating are prepared as anode materials for lithium ion batteries. The MnO microsphere material shows a reversible capacity of 800 mAh g -1 and an initial efficiency of 71%. It can deliver 600 mAh g -1 at a rate of 400 mA g -1. Results of Mn K-edge X-ray absorption near-edge structure (XANES) spectra and extended X-ray absorption fine structure (EXAFS) confirm further the conversion reaction mechanism, indicate that pristine MnO is reduced to Mn 0 after discharging to 0 V and part of reduced Mn 0 is not oxidized to Mn 2+ after charging to 3 V. This explains the origin of the initial irreversible capacity loss partially. The quasi open circuit voltage and the relationship between the current density and the overpotential are investigated. Both indicate that there is a significant voltage difference between the charging and discharging profiles even when the current density decreases to zero.

Very high-current-density Nb/AlN/Nb tunnel junctions for low-noise submillimeter mixers

NASA Astrophysics Data System (ADS)

Kawamura, Jonathan; Miller, David; Chen, Jian; Zmuidzinas, Jonas; Bumble, Bruce; LeDuc, Henry G.; Stern, Jeff A.

2000-04-01

We have fabricated and tested submillimeter-wave superconductor-insulator-superconductor (SIS) mixers using very high-current-density Nb/AlN/Nb tunnel junctions (Jc≈30 kA cm-2). The junctions have low-resistance-area products (RNA≈5.6 Ω μm2), good subgap-to-normal resistance ratios Rsg/RN≈10, and good run-to-run reproducibility. From Fourier transform spectrometer measurements, we infer that ωRNC=1 at 270 GHz. This is a factor of 2.5 improvement over what is generally available with Nb/AlOx/Nb junctions suitable for low-noise mixers. The AlN-barrier junctions are indeed capable of low-noise operation: we measure an uncorrected double-sideband receiver noise temperature of TRX=110 K at 533 GHz for an unoptimized device. In addition to providing wider bandwidth operation at lower frequencies, the AlN-barrier junctions will considerably improve the performance of THz SIS mixers by reducing rf loss in the tuning circuits.

Wide-temperature integrated operational amplifier

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad (Inventor); Levanas, Greg (Inventor); Chen, Yuan (Inventor); Cozy, Raymond S. (Inventor); Greenwell, Robert (Inventor); Terry, Stephen (Inventor); Blalock, Benjamin J. (Inventor)

2009-01-01

The present invention relates to a reference current circuit. The reference circuit comprises a low-level current bias circuit, a voltage proportional-to-absolute temperature generator for creating a proportional-to-absolute temperature voltage (VPTAT), and a MOSFET-based constant-IC regulator circuit. The MOSFET-based constant-IC regulator circuit includes a constant-IC input and constant-IC output. The constant-IC input is electrically connected with the VPTAT generator such that the voltage proportional-to-absolute temperature is the input into the constant-IC regulator circuit. Thus the constant-IC output maintains the constant-IC ratio across any temperature range.

Alternative model of space-charge-limited thermionic current flow through a plasma

DOE PAGES

Campanell, M. D.

2018-04-19

It is widely assumed that thermionic current flow through a plasma is limited by a “space-charge-limited” (SCL) cathode sheath that consumes the hot cathode's negative bias and accelerates upstream ions into the cathode. In this paper, we formulate a fundamentally different current-limited mode. In the “inverse” mode, the potentials of both electrodes are above the plasma potential, so that the plasma ions are confined. The bias is consumed by the anode sheath. There is no potential gradient in the neutral plasma region from resistivity or presheath. The inverse cathode sheath pulls some thermoelectrons back to the cathode, thereby limiting themore » circuit current. Thermoelectrons entering the zero-field plasma region that undergo collisions may also be sent back to the cathode, further attenuating the circuit current. In planar geometry, the plasma density is shown to vary linearly across the electrode gap. A continuum kinetic planar plasma diode simulation model is set up to compare the properties of current modes with classical, conventional SCL, and inverse cathode sheaths. SCL modes can exist only if charge-exchange collisions are turned off in the potential well of the virtual cathode to prevent ion trapping. With the collisions, the current-limited equilibrium must be inverse. Inverse operating modes should therefore be present or possible in many plasma devices that rely on hot cathodes. Evidence from past experiments is discussed. Finally, the inverse mode may offer opportunities to minimize sputtering and power consumption that were not previously explored due to the common assumption of SCL sheaths.« less

Alternative model of space-charge-limited thermionic current flow through a plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Campanell, M. D.

It is widely assumed that thermionic current flow through a plasma is limited by a “space-charge-limited” (SCL) cathode sheath that consumes the hot cathode's negative bias and accelerates upstream ions into the cathode. In this paper, we formulate a fundamentally different current-limited mode. In the “inverse” mode, the potentials of both electrodes are above the plasma potential, so that the plasma ions are confined. The bias is consumed by the anode sheath. There is no potential gradient in the neutral plasma region from resistivity or presheath. The inverse cathode sheath pulls some thermoelectrons back to the cathode, thereby limiting themore » circuit current. Thermoelectrons entering the zero-field plasma region that undergo collisions may also be sent back to the cathode, further attenuating the circuit current. In planar geometry, the plasma density is shown to vary linearly across the electrode gap. A continuum kinetic planar plasma diode simulation model is set up to compare the properties of current modes with classical, conventional SCL, and inverse cathode sheaths. SCL modes can exist only if charge-exchange collisions are turned off in the potential well of the virtual cathode to prevent ion trapping. With the collisions, the current-limited equilibrium must be inverse. Inverse operating modes should therefore be present or possible in many plasma devices that rely on hot cathodes. Evidence from past experiments is discussed. Finally, the inverse mode may offer opportunities to minimize sputtering and power consumption that were not previously explored due to the common assumption of SCL sheaths.« less

Entrainment and high-density three-dimensional mapping in right atrial macroreentry provide critical complementary information: Entrainment may unmask "visual reentry" as passive.

PubMed

Pathik, Bhupesh; Lee, Geoffrey; Nalliah, Chrishan; Joseph, Stephen; Morton, Joseph B; Sparks, Paul B; Sanders, Prashanthan; Kistler, Peter M; Kalman, Jonathan M

2017-10-01

With the recent advent of high-density (HD) 3-dimensional (3D) mapping, the utility of entrainment is uncertain. However, the limitations of visual representation and interpretation of these high-resolution 3D maps are unclear. The purpose of this study was to determine the strengths and limitations of both HD 3D mapping and entrainment mapping during mapping of right atrial macroreentry. Fifteen patients were studied. The number and type of circuits accounting for ≥90% of the tachycardia cycle length using HD 3D mapping were verified using systematic entrainment mapping. Entrainment sites with an unexpectedly long postpacing interval despite proximity to the active circuit were evaluated. Based on HD 3D mapping, 27 circuits were observed: 12 peritricuspid, 2 upper loop reentry, 10 lower loop reentry, and 3 lateral wall circuits. With entrainment, 17 of the 27 circuits were active: all 12 peritricuspid and 2 upper loop reentry. However, lower loop reentry was confirmed in only 3 of 10, and none of the 3 lateral wall circuits were present. Mean percentage of tachycardia cycle length covered by active circuits was 98% ± 1% vs 97% ± 2% for passive circuits (P = .09). None of the 345 entrainment runs terminated tachycardia or changed tachycardia mechanism. In 8 of 15 patients, 13 examples of unexpectedly long postpacing interval were observed at entrainment sites located distal to localized zones of slow conduction seen on HD 3D mapping. Using HD 3D mapping, "visual reentry" may be due to passive circuitous propagation rather than a critical reentrant circuit. HD 3D mapping provides new insights into regional conduction and helps explain unusual entrainment phenomena. Copyright © 2017 Heart Rhythm Society. Published by Elsevier Inc. All rights reserved.

The persistent current and energy spectrum on a driven mesoscopic LC-circuit with Josephson junction

NASA Astrophysics Data System (ADS)

Pahlavanias, Hassan

2018-03-01

The quantum theory for a mesoscopic electric circuit including a Josephson junction with charge discreteness is studied. By considering coupling energy of the mesoscopic capacitor in Josephson junction device, a Hamiltonian describing the dynamics of a quantum mesoscopic electric LC-circuit with charge discreteness is introduced. We first calculate the persistent current on a quantum driven ring including Josephson junction. Then we obtain the persistent current and energy spectrum of a quantum mesoscopic electrical circuit which includes capacitor, inductor, time-dependent external source and Josephson junction.

Circuit-level optimisation of a:Si TFT-based AMOLED pixel circuits for maximum hold current

NASA Astrophysics Data System (ADS)

Foroughi, Aidin; Mehrpoo, Mohammadreza; Ashtiani, Shahin J.

2013-11-01

Design of AMOLED pixel circuits has manifold constraints and trade-offs which provides incentive for circuit designers to seek optimal solutions for different objectives. In this article, we present a discussion on the viability of an optimal solution to achieve the maximum hold current. A compact formula for component sizing in a conventional 2T1C pixel is, therefore, derived. Compared to SPICE simulation results, for several pixel sizes, our predicted optimum sizing yields maximum currents with errors less than 0.4%.

Bi2S3microspheres grown on graphene sheets as low-cost counter-electrode materials for dye-sensitized solar cells

NASA Astrophysics Data System (ADS)

Li, Guang; Chen, Xiaoshuang; Gao, Guandao

2014-02-01

In this work, we synthesized 3D Bi2S3 microspheres comprised of nanorods grown along the (211) facet on graphene sheets by a solvothermal route, and investigated its catalytic activities through I-V curves and conversion efficiency tests as the CE in DSSCs. Although the (211) facet has a large band gap for a Bi2S3 semiconductor, owing to the introduction of graphene into the system, its short-circuit current density, open-circuit voltage, fill factor, and efficiency were Jsc = 12.2 mA cm-2, Voc = 0.75 V, FF = 0.60, and η = 5.5%, respectively. By integrating it with graphene sheets, our material achieved the conversion efficiency of 5.5%, which is almost triple the best conversion efficiency value of the DSSCs with (211)-faceted 3D Bi2S3 without graphene (1.9%) reported in the latest literature. Since this conversion-efficient 3D material grown on the graphene sheets significantly improves its catalytic properties, it paves the way for designing and applying low-cost Pt-free CE materials in DSSC from inorganic nanostructures.In this work, we synthesized 3D Bi2S3 microspheres comprised of nanorods grown along the (211) facet on graphene sheets by a solvothermal route, and investigated its catalytic activities through I-V curves and conversion efficiency tests as the CE in DSSCs. Although the (211) facet has a large band gap for a Bi2S3 semiconductor, owing to the introduction of graphene into the system, its short-circuit current density, open-circuit voltage, fill factor, and efficiency were Jsc = 12.2 mA cm-2, Voc = 0.75 V, FF = 0.60, and η = 5.5%, respectively. By integrating it with graphene sheets, our material achieved the conversion efficiency of 5.5%, which is almost triple the best conversion efficiency value of the DSSCs with (211)-faceted 3D Bi2S3 without graphene (1.9%) reported in the latest literature. Since this conversion-efficient 3D material grown on the graphene sheets significantly improves its catalytic properties, it paves the way for designing and applying low-cost Pt-free CE materials in DSSC from inorganic nanostructures. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr06093d

Single-layer MoS2 - electrical transport properties, devices and circuits

NASA Astrophysics Data System (ADS)

Kis, Andras

2013-03-01

After quantum dots, nanotubes and nanowires, two-dimensional materials in the shape of sheets with atomic-scale thickness represent the newest addition to the diverse family of nanoscale materials. Single-layer molybdenum disulphide (MoS2) , a direct-gap semiconductor is a typical example of these new graphene-like materials that can be produced using the adhesive-tape based cleavage technique originally developed for graphene. The presence of a band gap in MoS2 allowed us to fabricate transistors that can be turned off and operate with negligible leakage currents. Furthermore, our transistors can be used to build simple integrated circuits capable of performing logic operations and amplifying small signals. I will report here on our latest 2D MoS2 transistors with improved performance due to enhanced electrostatic control, showing improved currents and transconductance as well as current saturation. We also record electrical breakdown of our devices and find that MoS2 can support very high current densities, exceeding the current carrying capacity of copper by a factor of fifty. Furthermore, I will show optoelectronic devices incorporating MoS2 with sensitivity that surpasses similar graphene devices by several orders of magnitude. Finally, I will present temperature-dependent electrical transport and mobility measurements that show clear mobility enhancement due to the suppression of the influence of charge impurities with the deposition of an HfO2 capping layer. Financially supported by grants from Swiss National Science Foundation, EU-FP7, EU-ERC and Swiss Nanoscience Institute.

Effect of salt concentration and mediators in salt bridge microbial fuel cell for electricity generation from synthetic wastewater.

PubMed

Sevda, Surajbhan; Sreekrishnan, T R

2012-01-01

The aim of this study was to investigate the feasibility of using agar salt bridges for proton transport in Microbial Fuel Cells (MFC). It also tries to elucidate and effect of mediators on electricity production from wastewaters through experimentation using a simulated wastewater. In order to offset the very high cost of proton exchange membrane, salt bridges have been used in dual chamber MFCs. When the concentration of salt was varied in agar salt bridges from 1% to 10%, the volumetric power density changed from 1.71 to 84.99 mW/m(3) with a concomitant variation in power density from 0.32 to 16.02 mW/m(2). The maximum power density was observed at 5% salt concentration with 10% agar, which was accompanied by 88.41% COD reduction. In the case of methylene blue (0.01 mM) as the electron mediator, the voltage and current generation were 0.551 V and 0.47 mA, respectively. A maximum open circuit voltage of 0.718 V was seen at 0.08 mM methylene blue concentration, whereas maximum power densities of 17.59 mW/m(2) and 89.22 mW/m(3) were obtained. Different concentrations of neutral red were also tried out as mediators. A maximum open circuit voltage of 0.730 V was seen at 0.01 mM neutral red, corresponding to a power density of 12.02 mW/m(2) (volumetric power density of 60.97 mW/m(3)). Biofilm formation on the electrode surface was not observed in the presence of mediators, but was present in the absence of mediators. The results clearly demonstrated the feasibility to use agar salt bridge for proton transport and role of mediators in MFCs to generate electricity.

Efficient Lead-Free Solar Cells Based on Hollow {en}MASnI3 Perovskites.

PubMed

Ke, Weijun; Stoumpos, Constantinos C; Spanopoulos, Ioannis; Mao, Lingling; Chen, Michelle; Wasielewski, Michael R; Kanatzidis, Mercouri G

2017-10-18

Tin-based perovskites have very comparable electronic properties to lead-based perovskites and are regarded as possible lower toxicity alternates for solar cell applications. However, the efficiency of tin-based perovskite solar cells is still low and they exhibit poor air stability. Here, we report lead-free tin-based solar cells with greatly enhanced performance and stability using so-called "hollow" ethylenediammonium and methylammonium tin iodide ({en}MASnI 3 ) perovskite as absorbers. Our results show that en can improve the film morphology and most importantly can serve as a new cation to be incorporated into the 3D MASnI 3 lattice. When the cation of en becomes part of the 3D structure, a high density of SnI 2 vacancies is created resulting in larger band gap, larger unit cell volume, lower trap-state density, and much longer carrier lifetime compared to classical MASnI 3 . The best-performing {en}MASnI 3 solar cell has achieved a high efficiency of 6.63% with an open circuit voltage of 428.67 mV, a short-circuit current density of 24.28 mA cm -2 , and a fill factor of 63.72%. Moreover, the {en}MASnI 3 device shows much better air stability than the neat MASnI 3 device. Comparable performance is also achieved for cesium tin iodide solar cells with en loading, demonstrating the broad scope of this approach.

Corrosion of dental alloys in artificial saliva with Streptococcus mutans.

PubMed

Lu, Chunhui; Zheng, Yuanli; Zhong, Qun

2017-01-01

A comparative study of the corrosion resistance of CoCr and NiCr alloys in artificial saliva (AS) containing tryptic soy broth (Solution 1) and Streptococcus mutans (S. mutans) species (Solution 2) was performed by electrochemical methods, including open circuit potential measurements, impedance spectroscopy, and potentiodynamic polarization. The adherence of S. mutans to the NiCr and CoCr alloy surfaces immersed in Solution 2 for 24 h was verified by scanning electron microscopy, while the results of electrochemical impedance spectroscopy confirmed the importance of biofilm formation for the corrosion process. The R(QR) equivalent circuit was successfully used to fit the data obtained for the AS mixture without S. mutans, while the R(Q(R(QR))) circuit was found to be more suitable for describing the biofilm properties after treatment with the AS containing S. mutans species. In addition, a negative shift of the open circuit potential with immersion time was observed for all samples regardless of the solution type. Both alloys exhibited higher charge transfer resistance after treatment with Solution 2, and lower corrosion current densities were detected for all samples in the presence of S. mutans. The obtained results suggest that the biofilm formation observed after 24 h of exposure to S. mutans bacteria might enhance the corrosion resistance of the studied samples by creating physical barriers that prevented oxygen interactions with the metal surfaces.

Corrosion of dental alloys in artificial saliva with Streptococcus mutans

PubMed Central

Lu, Chunhui; Zheng, Yuanli; Zhong, Qun

2017-01-01

A comparative study of the corrosion resistance of CoCr and NiCr alloys in artificial saliva (AS) containing tryptic soy broth (Solution 1) and Streptococcus mutans (S. mutans) species (Solution 2) was performed by electrochemical methods, including open circuit potential measurements, impedance spectroscopy, and potentiodynamic polarization. The adherence of S. mutans to the NiCr and CoCr alloy surfaces immersed in Solution 2 for 24 h was verified by scanning electron microscopy, while the results of electrochemical impedance spectroscopy confirmed the importance of biofilm formation for the corrosion process. The R(QR) equivalent circuit was successfully used to fit the data obtained for the AS mixture without S. mutans, while the R(Q(R(QR))) circuit was found to be more suitable for describing the biofilm properties after treatment with the AS containing S. mutans species. In addition, a negative shift of the open circuit potential with immersion time was observed for all samples regardless of the solution type. Both alloys exhibited higher charge transfer resistance after treatment with Solution 2, and lower corrosion current densities were detected for all samples in the presence of S. mutans. The obtained results suggest that the biofilm formation observed after 24 h of exposure to S. mutans bacteria might enhance the corrosion resistance of the studied samples by creating physical barriers that prevented oxygen interactions with the metal surfaces. PMID:28350880

Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3.

PubMed

Zhang, Guozhen; Wu, Hao; Chen, Chao; Wang, Ti; Yue, Jin; Liu, Chang

2015-01-01

Transparent and flexible capacitors based on nanolaminate Al2O3/TiO2/Al2O3 dielectrics have been fabricated on indium tin oxide-coated polyethylene naphthalate substrates by atomic layer deposition. A capacitance density of 7.8 fF/μm(2) at 10 KHz was obtained, corresponding to a dielectric constant of 26.3. Moreover, a low leakage current density of 3.9 × 10(-8) A/cm(2) at 1 V has been realized. Bending test shows that the capacitors have better performances in concave conditions than in convex conditions. The capacitors exhibit an average optical transmittance of about 70% in visible range and thus open the door for applications in transparent and flexible integrated circuits.

Electric energy production by particle thermionic-thermoelectric power generators

NASA Technical Reports Server (NTRS)

Oettinger, P. E.

1980-01-01

Thermionic-thermoelectric power generators, composed of a thin layer of porous, low work function material separating a heated emitter electrode and a cooler collector electrode, have extremely large Seebeck coefficients of over 2 mV/K and can provide significant output power. Preliminary experiments with 20-micron thick (Ba Sr Ca)O coatings, limited by evaporative loss to temperatures below 1400 K, have yielded short circuit current densities of 500 mA/sq cm and power densities of 60 mW/ sq cm. Substantially more output is expected with cesium-coated refractory oxide particle coatings operating at higher temperatures. Practical generators will have thermal-to-electrical efficiencies of 10 to 20%. Further increases can be gained by cascading these high-temperature devices with lower temperature conventional thermoelectric generators.

Influence of niobium doping in hierarchically organized titania nanostructure on performance of dye-sensitized solar cells.

PubMed

Park, Jong Hoon; Noh, Jun Hong; Han, Byung Suh; Shin, Seong Sik; Park, Ik Jae; Kim, Dong Hoe; Hong, Kug Sun

2012-06-01

Niobium doped hierarchically organized TiO2 nanostructures composed of 20 nm size anatase nanocrystals were synthesized using pulsed laser deposition (PLD). The Nb doping concentration could be facilely controlled by adjusting the concentration of Nb in target materials. We could investigate the influence of Nb doping in the TiO2 photoelectrode on the cell performance of dye-sensitized solar cells (DSSCs) by the exclusion of morphological effects using the prepared Nb-doped TiO2 anostructures. We found no significant change in short circuit current density (Jsc) as a function of Nb doping concentration. However, open circuit voltage (Voc) and fill factor (FF) monotonously decrease with increasing Nb concentration. Dark current characteristics of the DSSCs reveal that the decrease in Voc and FF is attributed to the decrease in shunt resistance due to the increase in conductivity TiO2 by Nb doping. However, electrochemical impedance spectra (EIS) analysis at open circuit condition under illumination showed that the resistance at the TiO2/dye/electrolyte interface increases with Nb concentration, revealing that Nb doping suppress the charge recombination at the interface. In addition, electron life time obtained using characteristic frequency in Bode plot increases from 14 msec to 56 msec with increasing Nb concentration from 0 to 1.2 at%. This implies that the improved light harvesting can be achieved by increasing diffusion length through Nb-doping in the conventional TiO2 photoelectrode.

The importance of band tail recombination on current collection and open-circuit voltage in CZTSSe solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moore, James E.; Purdue University, West Lafayette, Indiana 47907; Hages, Charles J.

2016-07-11

Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) solar cells typically exhibit high short-circuit current density (J{sub sc}), but have reduced cell efficiencies relative to other thin film technologies due to a deficit in the open-circuit voltage (V{sub oc}), which prevent these devices from becoming commercially competitive. Recent research has attributed the low V{sub oc} in CZTSSe devices to small scale disorder that creates band tail states within the absorber band gap, but the physical processes responsible for this V{sub oc} reduction have not been elucidated. In this paper, we show that carrier recombination through non-mobile band tail states has a strong voltage dependencemore » and is a significant performance-limiting factor, and including these effects in simulation allows us to simultaneously explain the V{sub oc} deficit, reduced fill factor, and voltage-dependent quantum efficiency with a self-consistent set of material parameters. Comparisons of numerical simulations to measured data show that reasonable values for the band tail parameters (characteristic energy, capture rate) can account for the observed low V{sub oc}, high J{sub sc}, and voltage dependent collection efficiency. These results provide additional evidence that the presence of band tail states accounts for the low efficiencies of CZTSSe solar cells and further demonstrates that recombination through non-mobile band tail states is the dominant efficiency limiting mechanism.« less

Enhanced photovoltaic performance of inverted pyramid-based nanostructured black-silicon solar cells passivated by an atomic-layer-deposited Al2O3 layer.

PubMed

Chen, Hong-Yan; Lu, Hong-Liang; Ren, Qing-Hua; Zhang, Yuan; Yang, Xiao-Feng; Ding, Shi-Jin; Zhang, David Wei

2015-10-07

Inverted pyramid-based nanostructured black-silicon (BS) solar cells with an Al2O3 passivation layer grown by atomic layer deposition (ALD) have been demonstrated. A multi-scale textured BS surface combining silicon nanowires (SiNWs) and inverted pyramids was obtained for the first time by lithography and metal catalyzed wet etching. The reflectance of the as-prepared BS surface was about 2% lower than that of the more commonly reported upright pyramid-based SiNW BS surface over the whole of the visible light spectrum, which led to a 1.7 mA cm(-2) increase in short circuit current density. Moreover, the as-prepared solar cells were further passivated by an ALD-Al2O3 layer. The effect of annealing temperature on the photovoltaic performance of the solar cells was investigated. It was found that the values of all solar cell parameters including short circuit current, open circuit voltage, and fill factor exhibit a further increase under an optimized annealing temperature. Minority carrier lifetime measurements indicate that the enhanced cell performance is due to the improved passivation quality of the Al2O3 layer after thermal annealing treatments. By combining these two refinements, the optimized SiNW BS solar cells achieved a maximum conversion efficiency enhancement of 7.6% compared to the cells with an upright pyramid-based SiNWs surface and conventional SiNx passivation.

Joule-Thief Circuit Performance for Electricity Energy Saving of Emergency Lamps

NASA Astrophysics Data System (ADS)

Nuryanto Budisusila, Eka; Arifin, Bustanul

2017-04-01

The alternative energy such as battery as power source is required as energy source failures. The other need is outdoor lighting. The electrical power source is expected to be a power saving, optimum and has long life operating. The Joule-Thief circuit is one of solution method for energy saving by using raised electromagnetic force on cored coil when there is back-current. This circuit has a transistor operated as a switch to cut voltage and current flowing along the coils. The present of current causing magnetic induction and generates energy. Experimental prototype was designed by using battery 1.5V to activate Light Emitting Diode or LED as load. The LED was connected in parallel or serial circuit configuration. The result show that the joule-thief circuit able to supply LED circuits up to 40 LEDs.

Low Insertion HVDC Circuit Breaker: Magnetically Pulsed Hybrid Breaker for HVDC Power Distribution Protection

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2012-01-09

GENI Project: General Atomics is developing a direct current (DC) circuit breaker that could protect the grid from faults 100 times faster than its alternating current (AC) counterparts. Circuit breakers are critical elements in any electrical system. At the grid level, their main function is to isolate parts of the grid where a fault has occurred—such as a downed power line or a transformer explosion—from the rest of the system. DC circuit breakers must interrupt the system during a fault much faster than AC circuit breakers to prevent possible damage to cables, converters and other grid-level components. General Atomics’ high-voltagemore » DC circuit breaker would react in less than 1/1,000th of a second to interrupt current during a fault, preventing potential hazards to people and equipment.« less

Electric Field and Current Density Performance Analysis of Sf6, C4f8 and CO2 Gases As An Insulation

NASA Astrophysics Data System (ADS)

Mazli, Ahmad Danial Ahmad; Jamail, Nor Akmal Mohd; Azlin Othman, Nordiana

2017-08-01

SF6 gases are not only widely used as an insulating component in electric power industry but also as an arc extinguishing performance in high voltage (HV) gas-insulated circuit breaker (GCB). SF6 gases is generally used in the production of semiconductor materials and devices. Though these gasses is widely used in many application, the presences of temperature hotspot in the insulations may affect the insulation characteristics particularly electric field and current density. Therefore, it is important to determine the relationship between electric field and current density of gasses used in the insulator in the presence of hotspot. In this paper, three types of gases in particular Sulphur Hexafluoride (SF6), Octafluorocylobutane (C4F8), and Carbon Dioxide (CO2) was used in the insulator for gas insulation with the presence of two hotspots. These two hotspost were detected by referring the rising temperature in the insulator which are 1000 and 2000 Kelvin temperature for hotspot 1 and hotspot 2, respectively. From the simulation results, it can be concluded that Sulphur Hexafluoride (SF6) is the best choice for gas insulation since it had the lowest current density and electric field compared to Octafluorocylobutane (C4F8), and Carbon Dioxide (CO2). It is observed that the maximum current density and electric field for SF6 during normal condition are 358.94 × 103 V/m and 0.643 × 109 A/m2, respectively. Meanwhile, during temperature rising at hotspot 1 and hotspot 2, SF6 also had lowest current density and electric field compared to the other gasses where the results for Emax and Jmax at hotspot 1 are 322.34 × 103 V/m and 1.934 × 109 A/m2, respectively; While, Emax and Jmax at hotspot 2 are 259.77× 103 V/m and 2.824 × 109 A/m2. The results of this analysis can be used to find the best choices of gas that can be used in the insulator.

High discharge rate characteristics of nickel-cadmium batteries for pulse load filtering

NASA Technical Reports Server (NTRS)

Gearing, G. M.; Cimino, M. B.; Fritts, D. H.; Leonard, J. F.; Terzuoli, A. J., Jr.

1985-01-01

Several tests of specially fabricated nickel-cadmium batteries having circular disk type electrodes were considered. These batteries were evaluated as filter elements between a constant current power supply and a five hertz pulsed load demanding approximately twice the power supply current during the load on portion of the cycle. Short tests lasting 10,000 cycles were conducted at up to a 21 C rate and an equivalent energy density of over 40 Joules per pound. In addition, two batteries were subjected to 10 to the 7 charge/discharge cycles, one at a 6.5 C rate and the other at a 13 C rate. Assuming an electrode to battery weight ratio of 0.5, these tests represent an energy density of about 7 and 14 Joules per pound respectively. Energy density, efficiency, capacitance, average voltage, and available capacity were tracked during these tests. After 10 to the 7 cycles, capacity degradation was negligible for one battery and about 20% for the other. Cadmium electrode failure may be the factor limiting lifetime at extremely low depth of discharge cycling. The output was examined and a simple equivalent circuit was proposed.