Temperature Gradient Measurements by Using Thermoelectric Effect in CNTs-Silicone Adhesive Composite

PubMed Central

Chani, Muhammad Tariq Saeed; Karimov, Kh. S.; Asiri, Abdullah M.; Ahmed, Nisar; Bashir, Muhammad Mehran; Khan, Sher Bahadar; Rub, Malik Abdul; Azum, Naved

2014-01-01

This work presents the fabrication and investigation of thermoelectric cells based on composite of carbon nanotubes (CNT) and silicone adhesive. The composite contains CNT and silicon adhesive 1∶1 by weight. The current-voltage characteristics and dependences of voltage, current and Seebeck coefficient on the temperature gradient of cell were studied. It was observed that with increase in temperature gradient the open circuit voltage, short circuit current and the Seebeck coefficient of the cells increase. Approximately 7 times increase in temperature gradient increases the open circuit voltage and short circuit current up to 40 and 5 times, respectively. The simulation of experimental results is also carried out; the simulated results are well matched with experimental results. PMID:24748375

Polymer solar cells with enhanced open-circuit voltage and efficiency

NASA Astrophysics Data System (ADS)

Chen, Hsiang-Yu; Hou, Jianhui; Zhang, Shaoqing; Liang, Yongye; Yang, Guanwen; Yang, Yang; Yu, Luping; Wu, Yue; Li, Gang

2009-11-01

Following the development of the bulk heterojunction structure, recent years have seen a dramatic improvement in the efficiency of polymer solar cells. Maximizing the open-circuit voltage in a low-bandgap polymer is one of the critical factors towards enabling high-efficiency solar cells. Study of the relation between open-circuit voltage and the energy levels of the donor/acceptor in bulk heterojunction polymer solar cells has stimulated interest in modifying the open-circuit voltage by tuning the energy levels of polymers. Here, we show that the open-circuit voltage of polymer solar cells constructed based on the structure of a low-bandgap polymer, PBDTTT, can be tuned, step by step, using different functional groups, to achieve values as high as 0.76 V. This increased open-circuit voltage combined with a high short-circuit current density results in a polymer solar cell with a power conversion efficiency as high as 6.77%, as certified by the National Renewable Energy Laboratory.

Optimization of the Switch Mechanism in a Circuit Breaker Using MBD Based Simulation

PubMed Central

Jang, Jin-Seok; Yoon, Chang-Gyu; Ryu, Chi-Young; Kim, Hyun-Woo; Bae, Byung-Tae; Yoo, Wan-Suk

2015-01-01

A circuit breaker is widely used to protect electric power system from fault currents or system errors; in particular, the opening mechanism in a circuit breaker is important to protect current overflow in the electric system. In this paper, multibody dynamic model of a circuit breaker including switch mechanism was developed including the electromagnetic actuator system. Since the opening mechanism operates sequentially, optimization of the switch mechanism was carried out to improve the current breaking time. In the optimization process, design parameters were selected from length and shape of each latch, which changes pivot points of bearings to shorten the breaking time. To validate optimization results, computational results were compared to physical tests with a high speed camera. Opening time of the optimized mechanism was decreased by 2.3 ms, which was proved by experiments. Switch mechanism design process can be improved including contact-latch system by using this process. PMID:25918740

Thermally-induced voltage alteration for integrated circuit analysis

DOEpatents

Cole, Jr., Edward I.

2000-01-01

A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing an integrated circuit (IC) either from a device side of the IC or through the IC substrate to locate any open-circuit or short-circuit defects therein. The TIVA apparatus uses constant-current biasing of the IC while scanning a focused laser beam over electrical conductors (i.e. a patterned metallization) in the IC to produce localized heating of the conductors. This localized heating produces a thermoelectric potential due to the Seebeck effect in any conductors with open-circuit defects and a resistance change in any conductors with short-circuit defects, both of which alter the power demand by the IC and thereby change the voltage of a source or power supply providing the constant-current biasing. By measuring the change in the supply voltage and the position of the focused and scanned laser beam over time, any open-circuit or short-circuit defects in the IC can be located and imaged. The TIVA apparatus can be formed in part from a scanning optical microscope, and has applications for qualification testing or failure analysis of ICs.

Protective Socket For Integrated Circuits

NASA Technical Reports Server (NTRS)

Wilkinson, Chris; Henegar, Greg

1988-01-01

Socket for intergrated circuits (IC's) protects from excessive voltages and currents or from application of voltages and currents in wrong sequence during insertion or removal. Contains built-in switch that opens as IC removed, disconnecting leads from signals and power. Also protects other components on circuit board from transients produced by insertion and removal of IC. Makes unnecessary to turn off power to entire circuit board so other circuits on board continue to function.

Impulse commutating circuit with transformer to limit reapplied voltage

NASA Technical Reports Server (NTRS)

Mcconville, J. H.

1973-01-01

Silicon controlled rectifier opens circuit with currents flowing up to values of 30 amperes. Switching concept halves both current and voltage in middle of commutating cycle thereby lowering size and weight requirements. Commutating circuit can be turned on or off by command and will remain on in absence of load due to continuous gate.

Three-phase short circuit calculation method based on pre-computed surface for doubly fed induction generator

NASA Astrophysics Data System (ADS)

Ma, J.; Liu, Q.

2018-02-01

This paper presents an improved short circuit calculation method, based on pre-computed surface to determine the short circuit current of a distribution system with multiple doubly fed induction generators (DFIGs). The short circuit current, injected into power grid by DFIG, is determined by low voltage ride through (LVRT) control and protection under grid fault. However, the existing methods are difficult to calculate the short circuit current of DFIG in engineering practice due to its complexity. A short circuit calculation method, based on pre-computed surface, was proposed by developing the surface of short circuit current changing with the calculating impedance and the open circuit voltage. And the short circuit currents were derived by taking into account the rotor excitation and crowbar activation time. Finally, the pre-computed surfaces of short circuit current at different time were established, and the procedure of DFIG short circuit calculation considering its LVRT was designed. The correctness of proposed method was verified by simulation.

Fault-Tolerant Control of ANPC Three-Level Inverter Based on Order-Reduction Optimal Control Strategy under Multi-Device Open-Circuit Fault.

PubMed

Xu, Shi-Zhou; Wang, Chun-Jie; Lin, Fang-Li; Li, Shi-Xiang

2017-10-31

The multi-device open-circuit fault is a common fault of ANPC (Active Neutral-Point Clamped) three-level inverter and effect the operation stability of the whole system. To improve the operation stability, this paper summarized the main solutions currently firstly and analyzed all the possible states of multi-device open-circuit fault. Secondly, an order-reduction optimal control strategy was proposed under multi-device open-circuit fault to realize fault-tolerant control based on the topology and control requirement of ANPC three-level inverter and operation stability. This control strategy can solve the faults with different operation states, and can works in order-reduction state under specific open-circuit faults with specific combined devices, which sacrifices the control quality to obtain the stability priority control. Finally, the simulation and experiment proved the effectiveness of the proposed strategy.

High performance of PbSe/PbS core/shell quantum dot heterojunction solar cells: short circuit current enhancement without the loss of open circuit voltage by shell thickness control.

PubMed

Choi, Hyekyoung; Song, Jung Hoon; Jang, Jihoon; Mai, Xuan Dung; Kim, Sungwoo; Jeong, Sohee

2015-11-07

We fabricated heterojunction solar cells with PbSe/PbS core shell quantum dots and studied the precisely controlled PbS shell thickness dependency in terms of optical properties, electronic structure, and solar cell performances. When the PbS shell thickness increases, the short circuit current density (JSC) increases from 6.4 to 11.8 mA cm(-2) and the fill factor (FF) enhances from 30 to 49% while the open circuit voltage (VOC) remains unchanged at 0.46 V even with the decreased effective band gap. We found that the Fermi level and the valence band maximum level remain unchanged in both the PbSe core and PbSe/PbS core/shell with a less than 1 nm thick PbS shell as probed via ultraviolet photoelectron spectroscopy (UPS). The PbS shell reduces their surface trap density as confirmed by relative quantum yield measurements. Consequently, PbS shell formation on the PbSe core mitigates the trade-off relationship between the open circuit voltage and the short circuit current density. Finally, under the optimized conditions, the PbSe core with a 0.9 nm thick shell yielded a power conversion efficiency of 6.5% under AM 1.5.

Open circuit voltage-decay behavior in amorphous p-i-n solar due to injection

NASA Astrophysics Data System (ADS)

Smrity, Manu; Dhariwal, S. R.

2018-05-01

The paper deals with the basic recombination processes at the dangling bond and the band tail states at various levels of injection, expressed in terms of short-circuit current density and their role in the behavior of amorphous solar cells. As the level of injection increases the fill factor decreases whereas the open circuit voltage increases very slowly, showing a saturation tendency. Calculations have been done for two values of tail state densities and shows that with an increase in tail state densities both, the fill factor and open circuit voltage decreases, results an overall degradation of the solar cell.

Hybrid high direct current circuit interrupter

DOEpatents

Rockot, Joseph H.; Mikesell, Harvey E.; Jha, Kamal N.

1998-01-01

A device and a method for interrupting very high direct currents (greater than 100,000 amperes) and simultaneously blocking high voltages (greater than 600 volts). The device utilizes a mechanical switch to carry very high currents continuously with low loss and a silicon controlled rectifier (SCR) to bypass the current around the mechanical switch while its contacts are separating. A commutation circuit, connected in parallel with the SCR, turns off the SCR by utilizing a resonant circuit to divert the SCR current after the switch opens.

30 CFR 75.815 - Disconnect devices.

Code of Federal Regulations, 2011 CFR

2011-07-01

... phase-to-phase voltage of the circuit in which they are installed, and for the full-load current of the... explosion-proof enclosures, must be capable of interrupting the full-load current of the circuit or designed and installed to cause the current to be interrupted automatically prior to the opening of the...

30 CFR 75.815 - Disconnect devices.

Code of Federal Regulations, 2010 CFR

2010-07-01

... phase-to-phase voltage of the circuit in which they are installed, and for the full-load current of the... explosion-proof enclosures, must be capable of interrupting the full-load current of the circuit or designed and installed to cause the current to be interrupted automatically prior to the opening of the...

Integral Battery Power Limiting Circuit for Intrinsically Safe Applications

NASA Technical Reports Server (NTRS)

Burns, Bradley M.; Blalock, Norman N.

2010-01-01

A circuit topology has been designed to guarantee the output of intrinsically safe power for the operation of electrical devices in a hazardous environment. This design uses a MOSFET (metal oxide semiconductor field-effect transistor) as a switch to connect and disconnect power to a load. A test current is provided through a separate path to the load for monitoring by a comparator against a preset threshold level. The circuit is configured so that the test current will detect a fault in the load and open the switch before the main current can respond. The main current passes through the switch and then an inductor. When a fault occurs in the load, the current through the inductor cannot change immediately, but the voltage drops immediately to safe levels. The comparator detects this drop and opens the switch before the current in the inductor has a chance to respond. This circuit protects both the current and voltage from exceeding safe levels. Typically, this type of protection is accomplished by a fuse or a circuit breaker, but in order for a fuse or a circuit breaker to blow or trip, the current must exceed the safe levels momentarily, which may be just enough time to ignite anything in a hazardous environment. To prevent this from happening, a fuse is typically current-limited by the addition of the resistor to keep the current within safe levels while the fuse reacts. The use of a resistor is acceptable for non-battery applications where the wasted energy and voltage drop across the resistor can be tolerated. The use of the switch and inductor minimizes the wasted energy. For example, a circuit runs from a 3.6-V battery that must be current-limited to 200 mA. If the circuit normally draws 10 mA, then an 18-ohm resistor would drop 180 mV during normal operation, while a typical switch (0.02 ohm) and inductor (0.97 ohm) would only drop 9.9 mV. From a power standpoint, the current-limiting resistor protection circuit wastes about 18 times more power than the switch and the inductor configuration. In the fault condition, both the resistor and the inductor react immediately. The resistor reacts by allowing more current to flow and dropping the voltage. Initially, the inductor reacts by dropping the voltage, and then by not allowing the current to change. When the comparator detects the drop in voltage, it opens the switch, thus preventing any further current flow. The inductor alone is not sufficient protection, because after the voltage drop has settled, the inductor would then allow the current to change, in this example, the current would be 3.7 A. In the fault condition, the resistor is flowing 200 mA until the fuse blows (anywhere from 1 ms to 100 s), while the switch and inductor combination is flowing about 2 A test current while monitoring for the fault to be corrected. Finally, as an additional safety feature, the circuit can be configured to hold the switch opened until both the load and source are disconnected.

Reversing-counterpulse repetitive-pulse inductive storage circuit

DOEpatents

Honig, Emanuel M.

1987-01-01

A high-power reversing-counterpulse repetitive-pulse inductive storage and transfer circuit includes an opening switch, a main energy storage coil, a counterpulse capacitor and a small inductor. After counterpulsing the opening switch off, the counterpulse capacitor is recharged by the main energy storage coil before the load pulse is initiated. This gives the counterpulse capacitor sufficient energy for the next counterpulse operation, although the polarity of the capacitor's voltage must be reversed before that can occur. By using a current-zero switch as the counterpulse start switch, the capacitor is disconnected from the circuit (with a full charge) when the load pulse is initiated, preventing the capacitor from depleting its energy store by discharging through the load. After the load pulse is terminated by reclosing the main opening switch, the polarity of the counterpulse capacitor voltage is reversed by discharging the capacitor through a small inductor and interrupting the discharge current oscillation at zero current and peak reversed voltage. The circuit enables high-power, high-repetition-rate operation with reusable switches and features total control (pulse-to-pulse) over output pulse initiation, duration, repetition rate, and, to some extent, risetime.

Reversing-counterpulse repetitive-pulse inductive storage circuit

DOEpatents

Honig, E.M.

1984-06-05

A high power reversing-counterpulse repetitive-pulse inductive storage and transfer circuit includes an opening switch, a main energy storage coil, a counterpulse capacitor and a small inductor. After counterpulsing the opening switch off, the counterpulse capacitor is recharged by the main energy storage coil before the load pulse is initiated. This gives the counterpulse capacitor sufficient energy for the next counterpulse operation, although the polarity of the capacitor's voltage must be reversed before that can occur. By using a current-zero switch as the counterpulse start switch, the capacitor is disconnected from the circuit (with a full charge) when the load pulse is initiated, preventing the capacitor from depleting its energy store by discharging through the load. After the load pulse is terminated by reclosing the main opening switch, the polarity of the counterpulse capacitor voltage is reversed by discharging the capacitor through a small inductor and interrupting the discharge current oscillation at zero current and peak reversed voltage. The circuit enables high-power, high-repetition-rate operation with reusable switches and features total control (pulse-to-pulse) over output pulse initiation, duration, repetition rate, and, to some extent, risetime.

Development of a digital solar simulator based on full-bridge converter

NASA Astrophysics Data System (ADS)

Liu, Chen; Feng, Jian; Liu, Zhilong; Tong, Weichao; Ji, Yibo

2014-02-01

With the development of solar photovoltaic, distribution schemes utilized in power grid had been commonly application, and photovoltaic (PV) inverter is an essential equipment in grid. In this paper, a digital solar simulator based on full-bridge structure is presented. The output characteristic curve of system is electrically similar to silicon solar cells, which can greatly simplify research methods of PV inverter, improve the efficiency of research and development. The proposed simulator consists on a main control board based on TM320F28335, phase-shifted zero-voltage-switching (ZVS) DC-DC full-bridge converter and voltage and current sampling circuit, that allows emulating the voltage-current curve with the open-circuit voltage (Voc) of 900V and the short-circuit current (Isc) of 18A .When the system connected to a PV inverter, the inverter can quickly track from the open-circuit to the maximum power point and keep stability.

Integrated circuit failure analysis by low-energy charge-induced voltage alteration

DOEpatents

Cole, E.I. Jr.

1996-06-04

A scanning electron microscope apparatus and method are described for detecting and imaging open-circuit defects in an integrated circuit (IC). The invention uses a low-energy high-current focused electron beam that is scanned over a device surface of the IC to generate a charge-induced voltage alteration (CIVA) signal at the location of any open-circuit defects. The low-energy CIVA signal may be used to generate an image of the IC showing the location of any open-circuit defects. A low electron beam energy is used to prevent electrical breakdown in any passivation layers in the IC and to minimize radiation damage to the IC. The invention has uses for IC failure analysis, for production-line inspection of ICs, and for qualification of ICs. 5 figs.

Integrated circuit failure analysis by low-energy charge-induced voltage alteration

DOEpatents

Cole, Jr., Edward I.

1996-01-01

A scanning electron microscope apparatus and method are described for detecting and imaging open-circuit defects in an integrated circuit (IC). The invention uses a low-energy high-current focused electron beam that is scanned over a device surface of the IC to generate a charge-induced voltage alteration (CIVA) signal at the location of any open-circuit defects. The low-energy CIVA signal may be used to generate an image of the IC showing the location of any open-circuit defects. A low electron beam energy is used to prevent electrical breakdown in any passivation layers in the IC and to minimize radiation damage to the IC. The invention has uses for IC failure analysis, for production-line inspection of ICs, and for qualification of ICs.

Hybrid high direct current circuit interrupter

DOEpatents

Rockot, J.H.; Mikesell, H.E.; Jha, K.N.

1998-08-11

A device and a method are disclosed for interrupting very high direct currents (greater than 100,000 amperes) and simultaneously blocking high voltages (greater than 600 volts). The device utilizes a mechanical switch to carry very high currents continuously with low loss and a silicon controlled rectifier (SCR) to bypass the current around the mechanical switch while its contacts are separating. A commutation circuit, connected in parallel with the SCR, turns off the SCR by utilizing a resonant circuit to divert the SCR current after the switch opens. 7 figs.

Molecular-Beam-Epitaxy Program

NASA Technical Reports Server (NTRS)

Sparks, Patricia D.

1988-01-01

Molecular Beam Epitaxy (MBE) computer program developed to aid in design of single- and double-junction cascade cells made of silicon. Cascade cell has efficiency 1 or 2 percent higher than single cell, with twice the open-circuit voltage. Input parameters include doping density, diffusion lengths, thicknesses of regions, solar spectrum, absorption coefficients of silicon (data included for 101 wavelengths), and surface recombination velocities. Results include maximum power, short-circuit current, and open-circuit voltage. Program written in FORTRAN IV.

Comparison between two photovoltaic module models based on transistors

NASA Astrophysics Data System (ADS)

Saint-Eve, Frédéric; Sawicki, Jean-Paul; Petit, Pierre; Maufay, Fabrice; Aillerie, Michel

2018-05-01

The main objective of this paper is to verify the possibility to reduce to a simple electronic circuit with very few components the behavior simulation of an un-shaded photovoltaic (PV) module. Particularly, two models based on well-tried elementary structures, i.e., the Darlington structure in first model and the voltage regulation with programmable Zener diode in the second are analyzed. Specifications extracted from the behavior of a real I-V characteristic of a panel are considered and the principal electrical variables are deduced. The two models are expected to match with open circuit voltage, maximum power point (MPP) and short circuit current, without forgetting realistic current slopes on the both sides of MPP. The robustness is mentioned when irradiance varies and is considered as an additional fundamental property. For both models, two simulations are done to identify influence of some parameters. In the first model, a parameter allowing to adjust current slope on left side of MPP proves to be also important for the calculation of open circuit voltage. Besides this model does not authorize an entirely adjustment of I-V characteristic and MPP moves significantly away from real value when irradiance increases. On the contrary, the second model seems to have only qualities: open circuit voltage is easy to calculate, current slopes are realistic and there is perhaps a good robustness when irradiance variations are simulated by adjusting short circuit current of PV module. We have shown that these two simplified models are expected to make reliable and easier simulations of complex PV architecture integrating many different devices like PV modules or other renewable energy sources and storage capacities coupled in parallel association.

Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery

NASA Astrophysics Data System (ADS)

Cheng, Zai-Jun; San, Hai-Sheng; Chen, Xu-Yuan; Liu, Bo; Feng, Zhi-Hong

2011-07-01

A high open-circuit voltage betavoltaic microbattery based on a GaN p-i-n diode is demonstrated. Under the irradiation of a 4×4 mm2 planar solid 63Ni source with an activity of 2 mCi, the open-circuit voltage Voc of the fabricated single 2×2mm2 cell reaches as high as 1.62 V, the short-circuit current density Jsc is measured to be 16nA/cm2. The microbattery has a fill factor of 55%, and the energy conversion efficiency of beta radiation into electricity reaches to 1.13%. The results suggest that GaN is a highly promising potential candidate for long-life betavoltaic microbatteries used as power supplies for microelectromechanical system devices.

46 CFR 120.380 - Overcurrent protection.

Code of Federal Regulations, 2010 CFR

2010-10-01

... for each ungrounded conductor for the purpose of opening the electric circuit if the current reaches a value that causes an excessive or dangerous temperature in the conductor or conductor insulation. (b) The grounded conductor of a circuit must not be disconnected by a switch or circuit breaker, unless...

46 CFR 120.380 - Overcurrent protection.

Code of Federal Regulations, 2011 CFR

2011-10-01

... for each ungrounded conductor for the purpose of opening the electric circuit if the current reaches a value that causes an excessive or dangerous temperature in the conductor or conductor insulation. (b) The grounded conductor of a circuit must not be disconnected by a switch or circuit breaker, unless...

Fabrication of multijunction high voltage concentrator solar cells by integrated circuit technology

NASA Technical Reports Server (NTRS)

Valco, G. J.; Kapoor, V. J.; Evans, J. C., Jr.; Chai, A.-T.

1981-01-01

Standard integrated circuit technology has been developed for the design and fabrication of planar multijunction (PMJ) solar cell chips. Each 1 cm x 1 cm solar chip consisted of six n(+)/p, back contacted, internally series interconnected unit cells. These high open circuit voltage solar cells were fabricated on 2 ohm-cm, p-type 75 microns thick, silicon substrates. A five photomask level process employing contact photolithography was used to pattern for boron diffusions, phorphorus diffusions, and contact metallization. Fabricated devices demonstrated an open circuit voltage of 3.6 volts and a short circuit current of 90 mA at 80 AMl suns. An equivalent circuit model of the planar multi-junction solar cell was developed.

Reversing-counterpulse repetitive-pulse inductive storage circuit

DOEpatents

Honig, E.M.

1987-02-10

A high-power reversing-counterpulse repetitive-pulse inductive storage and transfer circuit includes an opening switch, a main energy storage coil, a counterpulse capacitor and a small inductor. After counterpulsing the opening switch off, the counterpulse capacitor is recharged by the main energy storage coil before the load pulse is initiated. This gives the counterpulse capacitor sufficient energy for the next counterpulse operation, although the polarity of the capacitor's voltage must be reversed before that can occur. By using a current-zero switch as the counterpulse start switch, the capacitor is disconnected from the circuit (with a full charge) when the load pulse is initiated, preventing the capacitor from depleting its energy store by discharging through the load. After the load pulse is terminated by reclosing the main opening switch, the polarity of the counterpulse capacitor voltage is reversed by discharging the capacitor through a small inductor and interrupting the discharge current oscillation at zero current and peak reversed voltage. The circuit enables high-power, high-repetition-rate operation with reusable switches and features total control (pulse-to-pulse) over output pulse initiation, duration, repetition rate, and, to some extent, risetime. 10 figs.

Performance of conversion efficiency of a crystalline silicon solar cell with base doping density

NASA Astrophysics Data System (ADS)

Sahin, Gokhan; Kerimli, Genber; Barro, Fabe Idrissa; Sane, Moustapha; Alma, Mehmet Hakkı

In this study, we investigate theoretically the electrical parameters of a crystalline silicon solar cell in steady state. Based on a one-dimensional modeling of the cell, the short circuit current density, the open circuit voltage, the shunt and series resistances and the conversion efficiency are calculated, taking into account the base doping density. Either the I-V characteristic, series resistance, shunt resistance and conversion efficiency are determined and studied versus base doping density. The effects applied of base doping density on these parameters have been studied. The aim of this work is to show how short circuit current density, open circuit voltage and parasitic resistances are related to the base doping density and to exhibit the role played by those parasitic resistances on the conversion efficiency of the crystalline silicon solar.

Textbook Error: Short Circuiting on Electrochemical Cell

ERIC Educational Resources Information Center

Bonicamp, Judith M.; Clark, Roy W.

2007-01-01

Short circuiting an electrochemical cell is an unreported but persistent error in the electrochemistry textbooks. It is suggested that diagrams depicting a cell delivering usable current to a load be postponed, the theory of open-circuit galvanic cells is explained, the voltages from the tables of standard reduction potentials is calculated and…

A high open-circuit voltage gallium nitride betavoltaic microbattery

NASA Astrophysics Data System (ADS)

Cheng, Zaijun; Chen, Xuyuan; San, Haisheng; Feng, Zhihong; Liu, Bo

2012-07-01

A high open-circuit voltage betavoltaic microbattery based on a gallium nitride (GaN) p-i-n homojunction is demonstrated. As a beta-absorbing layer, the low electron concentration of the n-type GaN layer is achieved by the process of Fe compensation doping. Under the irradiation of a planar solid 63Ni source with activity of 0.5 mCi, the open-circuit voltage of the fabricated microbattery with 2 × 2 mm2 area reaches as much as 1.64 V, which is the record value reported for betavoltaic batteries with 63Ni source, the short-circuit current was measured as 568 pA and the conversion effective of 0.98% was obtained. The experimental results suggest that GaN is a high-potential candidate for developing the betavoltaic microbattery.

Solid-state circuit breaker with current-limiting characteristic using a superconducting coil

DOEpatents

Boenig, H.J.

1982-08-16

A thyristor bridge interposes an ac source and a load. A series connected DC source and superconducting coil within the bridge biases the thyristors thereof so as to permit bidirectional ac current flow therethrough under normal operating conditions. Upon a fault condition a control circuit triggers the thyristors so as to reduce ac current flow therethrough to zero in less than two eyeles and to open the bridge thereafter. Upon a temporary overload condition the control circuit triggers the thyristors so as to limit ac current flow therethrough to an acceptable level.

Solid-state circuit breaker with current limiting characteristic using a superconducting coil

DOEpatents

Boenig, Heinrich J.

1984-01-01

A thyristor bridge interposes an ac source and a load. A series connected DC source and superconducting coil within the bridge biases the thyristors thereof so as to permit bidirectional ac current flow therethrough under normal operating conditions. Upon a fault condition a control circuit triggers the thyristors so as to reduce ac current flow therethrough to zero in less than two cycles and to open the bridge thereafter. Upon a temporary overload condition the control circuit triggers the thyristors so as to limit ac current flow therethrough to an acceptable level.

Benzothiadiazole-based polymer for single and double junction solar cells with high open circuit voltage.

PubMed

Venkatesan, Swaminathan; Ngo, Evan C; Chen, Qiliang; Dubey, Ashish; Mohammad, Lal; Adhikari, Nirmal; Mitul, Abu Farzan; Qiao, Qiquan

2014-06-21

Single and double junction solar cells with high open circuit voltage were fabricated using poly{thiophene-2,5-diyl-alt-[5,6-bis(dodecyloxy)benzo[c][1,2,5]thiadiazole]-4,7-diyl} (PBT-T1) blended with fullerene derivatives in different weight ratios. The role of fullerene loading on structural and morphological changes was investigated using atomic force microscopy (AFM) and X-ray diffraction (XRD). The XRD and AFM measurements showed that a higher fullerene mixing ratio led to breaking of inter-chain packing and hence resulted in smaller disordered polymer domains. When the PBT-T1:PC60BM weight ratio was 1 : 1, the polymer retained its structural order; however, large aggregated domains formed, leading to poor device performance due to low fill factor and short circuit current density. When the ratio was increased to 1 : 2 and then 1 : 3, smaller amorphous domains were observed, which improved photovoltaic performance. The 1 : 2 blending ratio was optimal due to adequate charge transport pathways giving rise to moderate short circuit current density and fill factor. Adding 1,8-diiodooctane (DIO) additive into the 1 : 2 blend films further improved both the short circuit current density and fill factor, leading to an increased efficiency to 4.5% with PC60BM and 5.65% with PC70BM. These single junction solar cells exhibited a high open circuit voltage at ∼ 0.9 V. Photo-charge extraction by linearly increasing voltage (Photo-CELIV) measurements showed the highest charge carrier mobility in the 1 : 2 film among the three ratios, which was further enhanced by introducing the DIO. The Photo-CELIV measurements with varying delay times showed significantly higher extracted charge carrier density for cells processed with DIO. Tandem devices using P3HT:IC60BA as bottom cell and PBT-T1:PC60BM as top cell exhibited a high open circuit voltage of 1.62 V with 5.2% power conversion efficiency.

62. VIEW LOOKING NORTHWEST AT THE OIL FILLED CIRCUIT BREAKER ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

62. VIEW LOOKING NORTHWEST AT THE OIL FILLED CIRCUIT BREAKER FOR GENERATOR NUMBER 1. CIRCUIT BREAKERS ARE AUTOMATED SWITCHES WHICH DISCONNECT THE GENERATORS FROM THE LINE WHEN SHORT CIRCUITS OCCUR. WHEN CIRCUITS INVOLVING HIGH CURRENTS AND VOLTAGES ARE BROKEN, THE AIR SURROUNDING MECHANICAL PARTS OF THE SWITCH BECOMES IONIZED AND CONTINUES TO CONDUCT ELECTRIC POWER ACROSS ANY GAP IN THE SWITCH CONTACTS. TO PREVENT THIS AND INSURE A POSITIVE INTERRUPTION OF CURRENT, THE SWITCH CONTACTS ARE IMMERSED IN A CONTAINER OF OIL. THE OIL DOES NOT SUPPORT THE FORMATION OF AN ARC AND EFFECTIVELY CUTS OFF THE CURRENT WHEN THE SWITCH CONTACTS ARE OPENED. - New York, New Haven & Hartford Railroad, Cos Cob Power Plant, Sound Shore Drive, Greenwich, Fairfield County, CT

Effects of a parallel resistor on electrical characteristics of a piezoelectric transformer in open-circuit transient state.

PubMed

Chang, Kuo-Tsai

2007-01-01

This paper investigates electrical transient characteristics of a Rosen-type piezoelectric transformer (PT), including maximum voltages, time constants, energy losses and average powers, and their improvements immediately after turning OFF. A parallel resistor connected to both input terminals of the PT is needed to improve the transient characteristics. An equivalent circuit for the PT is first given. Then, an open-circuit voltage, involving a direct current (DC) component and an alternating current (AC) component, and its related energy losses are derived from the equivalent circuit with initial conditions. Moreover, an AC power control system, including a DC-to-AC resonant inverter, a control switch and electronic instruments, is constructed to determine the electrical characteristics of the OFF transient state. Furthermore, the effects of the parallel resistor on the transient characteristics at different parallel resistances are measured. The advantages of adding the parallel resistor also are discussed. From the measured results, the DC time constant is greatly decreased from 9 to 0.04 ms by a 10 k(omega) parallel resistance under open output.

Taped Random Spectra for Reliability Demonstration Testing

DTIC Science & Technology

1981-04-01

circuit , barrier strip terminals 9A and 9B. Closure of the normally-open contacts provides the gate current necessary to trigger the control TRIAC ... Circuit contains a TRIAC , DIAC, Reed Relay (R3) and the Tape Running Relay Driver. The Cam on/off switching is accomplished through the barrier strip...2-25 2I; Input Power Circuit .. .. .... ...... ...... ...... ........... 2-26 2-13 Typical Control Circuit

Recombination in polymer-fullerene bulk heterojunction solar cells

NASA Astrophysics Data System (ADS)

Cowan, Sarah R.; Roy, Anshuman; Heeger, Alan J.

2010-12-01

Recombination of photogenerated charge carriers in polymer bulk heterojunction (BHJ) solar cells reduces the short circuit current (Jsc) and the fill factor (FF). Identifying the mechanism of recombination is, therefore, fundamentally important for increasing the power conversion efficiency. Light intensity and temperature-dependent current-voltage measurements on polymer BHJ cells made from a variety of different semiconducting polymers and fullerenes show that the recombination kinetics are voltage dependent and evolve from first-order recombination at short circuit to bimolecular recombination at open circuit as a result of increasing the voltage-dependent charge carrier density in the cell. The “missing 0.3 V” inferred from comparison of the band gaps of the bulk heterojunction materials and the measured open-circuit voltage at room-temperature results from the temperature dependence of the quasi-Fermi levels in the polymer and fullerene domains—a conclusion based on the fundamental statistics of fermions.

RF lockout circuit for electronic locking system

NASA Astrophysics Data System (ADS)

Becker, Earl M., Jr.; Miller, Allen

1991-02-01

An electronics lockout circuit was invented that includes an antenna adapted to receive radio frequency signals from a transmitter, and a radio frequency detector circuit which converts the radio frequency signals into a first direct current voltage indicative of the relative strength of the field resulting from the radio frequency signals. The first direct current voltage is supplied to a trigger circuit which compares this direct current voltage to an adjustable direct current reference voltage. This provides a second direct current voltage at the output whenever the amplitude of the first direct current voltage exceeds the amplitude of the reference voltage provided by the comparator circuit. This is supplied to a disconnect relay circuit which, upon receiving a signal from the electronic control unit of an electronic combination lock during the time period at which the second direct current voltage is present, isolates the door strike coil of a security door from the electronic control unit. This prevents signals falsely generated by the electronic control unit because of radio frequency signals in the vicinity of the electronic control unit energizing the door strike coil and accidentally opening a security door.

Discrete Semiconductor Device Reliability

DTIC Science & Technology

1988-03-25

array or alphanumeric display. "--" indicates unknown diode count. Voc Open circuit voltage for photovoltaic modules . indicates unknown. Isc Short... circuit current for photovoltaic modules . "--" indicates unknown. Number Tested Quantity of parts under the described test or field conditions for that...information pertaining to electronic systems and parts used therein. The present scope includes integrated circuits , hybrids, discrete semiconductors

Promoting Conceptual Change through Active Learning Using Open Source Software for Physics Simulations

ERIC Educational Resources Information Center

Baser, Mustafa

2006-01-01

This paper reports upon an active learning approach that promotes conceptual change when studying direct current electricity circuits, using free open source software, "Qucs". The study involved a total of 102 prospective mathematics teacher students. Prior to instruction, students' understanding of direct current electricity was…

Process Research of Polycrystalline Silicon Material (PROPSM)

NASA Technical Reports Server (NTRS)

Culik, J. S.

1984-01-01

An investigation was begun into the usefulness of molecular hydrogen annealing on polycrystalline solar cells. No improvement was realized even after twenty hours of hydrogenation. Thus, samples were chosen on the basis of: (1) low open circuit voltage; (2) low shunt conductance; and (3) high light generated current. These cells were hydrogenated in molecular hydrogen at 300 C. The differences between the before and after hydrogenation values are so slight as to be negligible. These cells have light generated current densities that indicate long minority carrier diffusion lengths. The open circuit voltage appears to be degraded, and quasi-neutral recombination current enhanced. Therefore, molecular hydrogen is not usful for passivating electrically active defects.

Automatic recloser circuit breaker integrated with GSM technology for power system notification

NASA Astrophysics Data System (ADS)

Lada, M. Y.; Khiar, M. S. A.; Ghani, S. A.; Nawawi, M. R. M.; Rahim, N. H.; Sinar, L. O. M.

2015-05-01

Lightning is one type of transient faults that usually cause the circuit breaker in the distribution board trip due to overload current detection. The instant tripping condition in the circuit breakers clears the fault in the system. Unfortunately most circuit breakers system is manually operated. The power line will be effectively re-energized after the clearing fault process is finished. Auto-reclose circuit is used on the transmission line to carry out the duty of supplying quality electrical power to customers. In this project, an automatic reclose circuit breaker for low voltage usage is designed. The product description is the Auto Reclose Circuit Breaker (ARCB) will trip if the current sensor detects high current which exceeds the rated current for the miniature circuit breaker (MCB) used. Then the fault condition will be cleared automatically and return the power line to normal condition. The Global System for Mobile Communication (GSM) system will send SMS to the person in charge if the tripping occurs. If the over current occurs in three times, the system will fully trip (open circuit) and at the same time will send an SMS to the person in charge. In this project a 1 A is set as the rated current and any current exceeding a 1 A will cause the system to trip or interrupted. This system also provides an additional notification for user such as the emergency light and warning system.

Origin of Reduced Open-Circuit Voltage in Highly Efficient Small-Molecule-Based Solar Cells upon Solvent Vapor Annealing.

PubMed

Deng, Wanyuan; Gao, Ke; Yan, Jun; Liang, Quanbin; Xie, Yuan; He, Zhicai; Wu, Hongbin; Peng, Xiaobin; Cao, Yong

2018-03-07

In this study, we demonstrate that remarkably reduced open-circuit voltage in highly efficient organic solar cells (OSCs) from a blend of phenyl-C 61 -butyric acid methyl ester and a recently developed conjugated small molecule (DPPEZnP-THD) upon solvent vapor annealing (SVA) is due to two independent sources: increased radiative recombination and increased nonradiative recombination. Through the measurements of electroluminescence due to the emission of the charge-transfer state and photovoltaic external quantum efficiency measurement, we can quantify that the open-circuit voltage losses in a device with SVA due to the radiative recombination and nonradiative recombination are 0.23 and 0.31 V, respectively, which are 0.04 and 0.07 V higher than those of the as-cast device. Despite of the reduced open-circuit voltage, the device with SVA exhibited enhanced dissociation of charge-transfer excitons, leading to an improved short-circuit current density and a remarkable power conversion efficiency (PCE) of 9.41%, one of the best for solution-processed OSCs based on small-molecule donor materials. Our study also clearly shows that removing the nonradiative recombination pathways and/or suppressing energetic disorder in the active layer would result in more long-lived charge carriers and enhanced open-circuit voltage, which are prerequisites for further improving the PCE.

Derivation of the open-circuit voltage of organic solar cells

NASA Astrophysics Data System (ADS)

Staple, Douglas B.; Oliver, Patricia A. K.; Hill, Ian G.

2014-05-01

Organic photovoltaic cells have improved in efficiency from 1% two decades ago to over 10% today. Continued improvement necessitates a theoretical understanding of the factors determining efficiency. Organic photovoltaic efficiency can be parameterized in terms of open-circuit voltage, short-circuit current, and fill factor. Here we present a theory that explains the dependencies of open-circuit voltage on semiconductor energy levels, light intensity, solar cell and light-source temperatures, charge-carrier recombination, and external fluorescence efficiency. The present theory also explains why recombination at the donor-acceptor heterointerface is a dominant process in heterojunction-based cells. Furthermore, the Carnot efficiency appears, highlighting the connection to basic thermodynamics. The theory presented here is consistent with and builds on the experimental and theoretical observations already in the literature. Crucially, the present theory can be straightforwardly derived in a line-by-line fashion using standard tools from statistical physics.

Development, Integration and Testing of Automated Triggering Circuit for Hybrid DC Circuit Breaker

NASA Astrophysics Data System (ADS)

Kanabar, Deven; Roy, Swati; Dodiya, Chiragkumar; Pradhan, Subrata

2017-04-01

A novel concept of Hybrid DC circuit breaker having combination of mechanical switch and static switch provides arc-less current commutation into the dump resistor during quench in superconducting magnet operation. The triggering of mechanical and static switches in Hybrid DC breaker can be automatized which can effectively reduce the overall current commutation time of hybrid DC circuit breaker and make the operation independent of opening time of mechanical switch. With this view, a dedicated control circuit (auto-triggering circuit) has been developed which can decide the timing and pulse duration for mechanical switch as well as static switch from the operating parameters. This circuit has been tested with dummy parameters and thereafter integrated with the actual test set up of hybrid DC circuit breaker. This paper deals with the conceptual design of the auto-triggering circuit, its control logic and operation. The test results of Hybrid DC circuit breaker using this circuit have also been discussed.

Effect of dislocations on the open-circuit voltage, short-circuit current and efficiency of heteroepitaxial indium phosphide solar cells

NASA Technical Reports Server (NTRS)

Jain, Raj K.; Flood, Dennis J.

1990-01-01

Excellent radiation resistance of indium phosphide solar cells makes them a promising candidate for space power applications, but the present high cost of starting substrates may inhibit their large scale use. Thin film indium phosphide cells grown on Si or GaAs substrates have exhibited low efficiencies, because of the generation and propagation of large number of dislocations. Dislocation densities were calculated and its influence on the open circuit voltage, short circuit current, and efficiency of heteroepitaxial indium phosphide cells was studied using the PC-1D. Dislocations act as predominant recombination centers and are required to be controlled by proper transition layers and improved growth techniques. It is shown that heteroepitaxial grown cells could achieve efficiencies in excess of 18 percent AMO by controlling the number of dislocations. The effect of emitter thickness and surface recombination velocity on the cell performance parameters vs. dislocation density is also studied.

11.4% Efficiency non-fullerene polymer solar cells with trialkylsilyl substituted 2D-conjugated polymer as donor

PubMed Central

Bin, Haijun; Gao, Liang; Zhang, Zhi-Guo; Yang, Yankang; Zhang, Yindong; Zhang, Chunfeng; Chen, Shanshan; Xue, Lingwei; Yang, Changduk; Xiao, Min; Li, Yongfang

2016-01-01

Simutaneously high open circuit voltage and high short circuit current density is a big challenge for achieving high efficiency polymer solar cells due to the excitonic nature of organic semdonductors. Herein, we developed a trialkylsilyl substituted 2D-conjugated polymer with the highest occupied molecular orbital level down-shifted by Si–C bond interaction. The polymer solar cells obtained by pairing this polymer with a non-fullerene acceptor demonstrated a high power conversion efficiency of 11.41% with both high open circuit voltage of 0.94 V and high short circuit current density of 17.32 mA cm−2 benefitted from the complementary absorption of the donor and acceptor, and the high hole transfer efficiency from acceptor to donor although the highest occupied molecular orbital level difference between the donor and acceptor is only 0.11 eV. The results indicate that the alkylsilyl substitution is an effective way in designing high performance conjugated polymer photovoltaic materials. PMID:27905397

11.4% Efficiency non-fullerene polymer solar cells with trialkylsilyl substituted 2D-conjugated polymer as donor.

PubMed

Bin, Haijun; Gao, Liang; Zhang, Zhi-Guo; Yang, Yankang; Zhang, Yindong; Zhang, Chunfeng; Chen, Shanshan; Xue, Lingwei; Yang, Changduk; Xiao, Min; Li, Yongfang

2016-12-01

Simutaneously high open circuit voltage and high short circuit current density is a big challenge for achieving high efficiency polymer solar cells due to the excitonic nature of organic semdonductors. Herein, we developed a trialkylsilyl substituted 2D-conjugated polymer with the highest occupied molecular orbital level down-shifted by Si-C bond interaction. The polymer solar cells obtained by pairing this polymer with a non-fullerene acceptor demonstrated a high power conversion efficiency of 11.41% with both high open circuit voltage of 0.94 V and high short circuit current density of 17.32 mA cm -2 benefitted from the complementary absorption of the donor and acceptor, and the high hole transfer efficiency from acceptor to donor although the highest occupied molecular orbital level difference between the donor and acceptor is only 0.11 eV. The results indicate that the alkylsilyl substitution is an effective way in designing high performance conjugated polymer photovoltaic materials.

Constant-current control method of multi-function electromagnetic transmitter.

PubMed

Xue, Kaichang; Zhou, Fengdao; Wang, Shuang; Lin, Jun

2015-02-01

Based on the requirements of controlled source audio-frequency magnetotelluric, DC resistivity, and induced polarization, a constant-current control method is proposed. Using the required current waveforms in prospecting as a standard, the causes of current waveform distortion and current waveform distortion's effects on prospecting are analyzed. A cascaded topology is adopted to achieve 40 kW constant-current transmitter. The responsive speed and precision are analyzed. According to the power circuit of the transmitting system, the circuit structure of the pulse width modulation (PWM) constant-current controller is designed. After establishing the power circuit model of the transmitting system and the PWM constant-current controller model, analyzing the influence of ripple current, and designing an open-loop transfer function according to the amplitude-frequency characteristic curves, the parameters of the PWM constant-current controller are determined. The open-loop transfer function indicates that the loop gain is no less than 28 dB below 160 Hz, which assures the responsive speed of the transmitting system; the phase margin is 45°, which assures the stabilization of the transmitting system. Experimental results verify that the proposed constant-current control method can keep the control error below 4% and can effectively suppress load change caused by the capacitance of earth load.

Constant-current control method of multi-function electromagnetic transmitter

NASA Astrophysics Data System (ADS)

Xue, Kaichang; Zhou, Fengdao; Wang, Shuang; Lin, Jun

2015-02-01

Based on the requirements of controlled source audio-frequency magnetotelluric, DC resistivity, and induced polarization, a constant-current control method is proposed. Using the required current waveforms in prospecting as a standard, the causes of current waveform distortion and current waveform distortion's effects on prospecting are analyzed. A cascaded topology is adopted to achieve 40 kW constant-current transmitter. The responsive speed and precision are analyzed. According to the power circuit of the transmitting system, the circuit structure of the pulse width modulation (PWM) constant-current controller is designed. After establishing the power circuit model of the transmitting system and the PWM constant-current controller model, analyzing the influence of ripple current, and designing an open-loop transfer function according to the amplitude-frequency characteristic curves, the parameters of the PWM constant-current controller are determined. The open-loop transfer function indicates that the loop gain is no less than 28 dB below 160 Hz, which assures the responsive speed of the transmitting system; the phase margin is 45°, which assures the stabilization of the transmitting system. Experimental results verify that the proposed constant-current control method can keep the control error below 4% and can effectively suppress load change caused by the capacitance of earth load.

Candle Soot-Driven Performance Enhancement in Pyroelectric Energy Conversion

NASA Astrophysics Data System (ADS)

Azad, Puneet; Singh, V. P.; Vaish, Rahul

2018-05-01

We observed substantial enhancement in pyroelectric output with the help of candle soot coating on the surface of lead zirconate titanate (PZT). Candle soot of varying thicknesses was coated by directly exposing pyroelectric material to the candle flame. The open-circuit pyroelectric voltage and closed-circuit pyroelectric current were recorded while applying infrared heating across the uncoated and candle soot-coated samples for different heating and cooling cycles. In comparison to the uncoated sample, the maximum open-circuit voltage improves seven times for the candle soot-coated sample and electric current increases by eight times across a resistance of 10Å. Moreover, the harvested energy is enhanced by 50 times for candle soot-coated sample. Results indicate that candle soot coating is an effective and economic method to improve infrared sensing performance of pyroelectric materials.

Application of the superposition principle to solar-cell analysis

NASA Technical Reports Server (NTRS)

Lindholm, F. A.; Fossum, J. G.; Burgess, E. L.

1979-01-01

The superposition principle of differential-equation theory - which applies if and only if the relevant boundary-value problems are linear - is used to derive the widely used shifting approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. Analytical methods are presented to treat cases where shifting is not strictly valid. Well-defined conditions necessary for superposition to apply are established. For high injection in the base region, the method of analysis accurately yields the dependence of the open-circuit voltage on the short-circuit current (or the illumination level).

Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells.

PubMed

Vermang, Bart; Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika; Kotipalli, Ratan; Henry, Frederic; Flandre, Denis

2014-10-01

Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se 2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano-sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano-sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano-sized point contact openings. Evaporation of MgF 2 coated with a thin atomic layer deposited Al 2 O 3 layer, or direct current magnetron sputtering of Al 2 O 3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al 2 O 3 /CIGS rear interface. (MgF 2 /)Al 2 O 3 rear surface passivated ultra-thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385 nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells.

Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells

PubMed Central

Vermang, Bart; Wätjen, Jörn Timo; Fjällström, Viktor; Rostvall, Fredrik; Edoff, Marika; Kotipalli, Ratan; Henry, Frederic; Flandre, Denis

2014-01-01

Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se2 (CIGS) solar cells decreases cell efficiency considerably, as both short-circuit current and open-circuit voltage are reduced because of incomplete absorption and high Mo/CIGS rear interface recombination. In this work, an innovative rear cell design is developed to avoid both effects: a highly reflective rear surface passivation layer with nano-sized local point contact openings is employed to enhance rear internal reflection and decrease the rear surface recombination velocity significantly, as compared with a standard Mo/CIGS rear interface. The formation of nano-sphere shaped precipitates in chemical bath deposition of CdS is used to generate nano-sized point contact openings. Evaporation of MgF2 coated with a thin atomic layer deposited Al2O3 layer, or direct current magnetron sputtering of Al2O3 are used as rear surface passivation layers. Rear internal reflection is enhanced substantially by the increased thickness of the passivation layer, and also the rear surface recombination velocity is reduced at the Al2O3/CIGS rear interface. (MgF2/)Al2O3 rear surface passivated ultra-thin CIGS solar cells are fabricated, showing an increase in short circuit current and open circuit voltage compared to unpassivated reference cells with equivalent CIGS thickness. Accordingly, average solar cell efficiencies of 13.5% are realized for 385 nm thick CIGS absorber layers, compared with 9.1% efficiency for the corresponding unpassivated reference cells. PMID:26300619

A New Method for Raising Opening Velocity of Electromagnetic Actuated Vacuum Circuit Breaker

NASA Astrophysics Data System (ADS)

Tsukima, Mitsuru; Takeuchi, Toshie; Koyama, Kenichi; Yoshiyasu, Hajimu

Recently an electromagnetic actuator has been widely used as an operating mechanism for the vacuum circuit breaker (VCB). The opening velocity of the contact is supposed to be strongly related with current interruption performance. This paper presents a simple and new technique that raises opening velocity of the electromagnetic actuated VCB. In order to investigate this reason, we built a numerical simulator that predicts the dynamic characteristics of the VCB contact. It takes into account of the magnetic behavior in the actuator and is also coupled with the external control circuit. According to this simulation, it is shown that it is originated from the sharp rise in the electromagnetic thrust force due to the selective saturation of the magnetic yoke. As the result of our experiments, by this technique the opening velocity was verified to be 1.5 times faster than by the conventional way.

46 CFR 129.380 - Overcurrent protection.

Code of Federal Regulations, 2011 CFR

2011-10-01

... protection must be provided for each ungrounded conductor, to open the electric circuit if the current reaches a value that causes an excessive or dangerous temperature in the conductor or its insulation. (b) Each conductor of a control, interlock, or indicator circuit, such as a conductor for an instrument...

46 CFR 169.683 - Overcurrent protection, general.

Code of Federal Regulations, 2011 CFR

2011-10-01

... provided for each ungrounded conductor for the purpose of opening the electric circuit if the current reaches a value that causes an excessive or dangerous temperature in the conductor or conductor insulation... ungrounded conductors of the circuit simultaneously. (c) Each conductor, including a generator lead and shore...

Further study of inversion layer MOS solar cells

NASA Technical Reports Server (NTRS)

Ho, Fat Duen

1987-01-01

A group of inversion layer MOS solar cells has been fabricated. The highest value of open-circuit voltage obtained for the cells is 0.568V. One of the cells has produced a short-circuit current of 79.6 mA and an open-circuit voltage of 0.54V. It is estimated that the actual area AMO efficiency of this cell is 6.6 percent with an assumed value of 0.75 for its fill factor. Efforts made for fabricating an IL/MOS cell with reasonable efficiencies are reported. Future work for 4 sq cm IL cells and 25 sq cm IL cells is discussed.

Results of module electrical measurement of the DOE 46-kilowatt procurement

NASA Technical Reports Server (NTRS)

Curtis, H. B.

1978-01-01

Current-voltage measurements have been made on terrestrial solar cell modules of the DOE/JPL Low Cost Silicon Solar Array procurement. Data on short circuit current, open circuit voltage, and maximum power for the four types of modules are presented in normalized form, showing distribution of the measured values. Standard deviations from the mean values are also given. Tests of the statistical significance of the data are discussed.

46 CFR 183.380 - Overcurrent protection.

Code of Federal Regulations, 2010 CFR

2010-10-01

...) Overcurrent protection must be provided for each ungrounded conductor for the purpose of opening the electric circuit if the current reaches a value that causes an excessive or dangerous temperature in the conductor or conductor insulation. (b) The grounded conductor of a circuit must not be disconnected by a switch...

46 CFR 183.380 - Overcurrent protection.

Code of Federal Regulations, 2011 CFR

2011-10-01

...) Overcurrent protection must be provided for each ungrounded conductor for the purpose of opening the electric circuit if the current reaches a value that causes an excessive or dangerous temperature in the conductor or conductor insulation. (b) The grounded conductor of a circuit must not be disconnected by a switch...

Inverse spin Hall effect in a closed loop circuit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Omori, Y.; Auvray, F.; Wakamura, T.

We present measurements of inverse spin Hall effects (ISHEs), in which the conversion of a spin current into a charge current via the ISHE is detected not as a voltage in a standard open circuit but directly as the charge current generated in a closed loop. The method is applied to the ISHEs of Bi-doped Cu and Pt. The derived expression of ISHE for the loop structure can relate the charge current flowing into the loop to the spin Hall angle of the SHE material and the resistance of the loop.

Design optimization of GaAs betavoltaic batteries

NASA Astrophysics Data System (ADS)

Chen, Haiyanag; Jiang, Lan; Chen, Xuyuan

2011-06-01

GaAs junctions are designed and fabricated for betavoltaic batteries. The design is optimized according to the characteristics of GaAs interface states and the diffusion length in the depletion region of GaAs carriers. Under an illumination of 10 mCi cm-2 63Ni, the open circuit voltage of the optimized batteries is about ~0.3 V. It is found that the GaAs interface states induce depletion layers on P-type GaAs surfaces. The depletion layer along the P+PN+ junction edge isolates the perimeter surface from the bulk junction, which tends to significantly reduce the battery dark current and leads to a high open circuit voltage. The short circuit current density of the optimized junction is about 28 nA cm-2, which indicates a carrier diffusion length of less than 1 µm. The overall results show that multi-layer P+PN+ junctions are the preferred structures for GaAs betavoltaic battery design.

Process Research on Polycrystalline Silicon Material (PROPSM)

NASA Technical Reports Server (NTRS)

Culik, J. S.

1983-01-01

The performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was investigated by measuring the illuminated current voltage (I-V) characteristics of the minicell wafer set. The average short circuit current on different wafers is 3 to 14 percent lower than that of single crystal Czochralski silicon. The scatter was typically less than 3 percent. The average open circuit voltage is 20 to 60 mV less than that of single crystal silicon. The scatter in the open circuit voltage of most of the polycrystalline silicon wafers was 15 to 20 mV, although two wafers had significantly greater scatter than this value. The fill factor of both polycrystalline and single crystal silicon cells was typically in the range of 60 to 70 percent; however several polycrystalline silicon wafers have fill factor averages which are somewhat lower and have a significantly larger degree of scatter.

Process Research On Polycrystalline Silicon Material (PROPSM)

NASA Technical Reports Server (NTRS)

Culik, J. S.; Wohlgemuth, J. H.

1982-01-01

Performance limiting mechanisms in polycrystalline silicon are investigated by fabricating a matrix of solar cells of various thicknesses from polycrystalline silicon wafers of several bulk resistivities. The analysis of the results for the entire matrix indicates that bulk recombination is the dominant factor limiting the short circuit current in large grain (greater than 1 to 2 mm diameter) polycrystalline silicon, the same mechanism that limits the short circuit current in single crystal silicon. An experiment to investigate the limiting mechanisms of open circuit voltage and fill factor for large grain polycrystalline silicon is designed. Two process sequences to fabricate small cells are investigated.

Correlation of energy disorder and open-circuit voltage in hybrid perovskite solar cells

DOE PAGES

Shao, Yuchuan; Yuan, Yongbo; Huang, Jinsong

2016-01-11

Organometal trihalide perovskites have been demonstrated as excellent light absorbers for high efficiency photovoltaic applications. Previous approaches to increasing the solar cell efficiency have focussed on optimisation of the grain morphology of perovskite thin films. Here, we show that the structural order of the electron-transport layers also has a significant impact on solar cell performance. We demonstrate that the power conversion efficiency of CH 3NH 3PbI 3 planar-heterojunction photovoltaic cells increases from 17.1% to 19.4% when the energy disorder in the fullerene electron-transport layer is reduced by a simple solvent annealing process. The increase in efficiency is the result ofmore » the enhancement in open-circuit voltage from 1.04 V to 1.13 V without sacrificing the short-circuit current and fill factor. Finally, these results shed light on the origin of open-circuit voltage in perovskite solar cells, and provide a new path to further increase their efficiency« less

Factors affecting the open-circuit voltage and electrode kinetics of some iron/titanium redox flow cells

NASA Technical Reports Server (NTRS)

Reid, M. A.; Gahn, R. F.

1977-01-01

Performance of the iron-titanium redox flow cell was studied as a function of acid concentration. Anion permeable membranes separated the compartments. Electrodes were graphite cloth. Current densities ranged up to 25 mA/square centimeter. Open-circuit and load voltages decreased as the acidity was increased on the iron side as predicted. On the titanium side, open-circuit voltages decreased as the acidity was increased in agreement with theory, but load voltages increased due to decreased polarization with increasing acidity. High acidity on the titanium side coupled with low acidity on the iron side gives the best load voltage, but such cells show voltage losses as they are repeatedly cycled. Analyses show that the bulk of the voltage losses are due to diffusion of acid through the membrane.

New equivalent lumped electrical circuit for piezoelectric transformers.

PubMed

Gonnard, Paul; Schmitt, P M; Brissaud, Michel

2006-04-01

A new equivalent circuit is proposed for a contour-vibration-mode piezoelectric transformer (PT). It is shown that the usual lumped equivalent circuit derived from the conventional Mason approach is not accurate. The proposed circuit, built on experimental measurements, makes an explicit difference between the elastic energies stored respectively on the primary and secondary parts. The experimental and theoretical resonance frequencies with the secondary in open or short circuit are in good agreement as well as the output "voltage-current" characteristic and the optimum efficiency working point. This circuit can be extended to various PT configurations and appears to be a useful tool for modeling electronic devices that integrate piezoelectric transformers.

Tester Detects Steady-Short Or Intermittent-Open Circuits

NASA Technical Reports Server (NTRS)

Anderson, Bobby L.

1990-01-01

Momentary open circuits or steady short circuits trigger buzzer. Simple, portable, lightweight testing circuit sounds long-duration alarm when it detects steady short circuit or momentary open circuit in coaxial cable or other two-conductor transmission line. Tester sensitive to discontinuities lasting 10 microseconds or longer. Used extensively for detecting intermittent open shorts in accelerometer and extensometer cables. Also used as ordinary buzzer-type continuity checker to detect steady short or open circuits.

Design and optimization of ARC less InGaP/GaAs single-/multi-junction solar cells with tunnel junction and back surface field layers

NASA Astrophysics Data System (ADS)

Chee, Kuan W. A.; Hu, Yuning

2018-07-01

There has always been an inexorable interest in the solar industry in boosting the photovoltaic conversion efficiency. This paper presents a theoretical and numerical simulation study of the effects of key design parameters on the photoelectric performance of single junction (InGaP- or GaAs-based) and dual junction (InGaP/GaAs) inorganic solar cells. The influence of base layer thickness, base doping concentration, junction temperature, back surface field layer composition and thickness, and tunnel junction material, were correlated with open circuit voltage, short-circuit current, fill factor and power conversion efficiency performance. The InGaP/GaAs dual junction solar cell was optimized with the tunnel junction and back surface field designs, yielding a short-circuit current density of 20.71 mAcm-2 , open-circuit voltage of 2.44 V and fill factor of 88.6%, and guaranteeing an optimal power conversion efficiency of at least 32.4% under 1 sun AM0 illumination even without an anti-reflective coating.

Fault tolerant system based on IDDQ testing

NASA Astrophysics Data System (ADS)

Guibane, Badi; Hamdi, Belgacem; Mtibaa, Abdellatif; Bensalem, Brahim

2018-06-01

Offline test is essential to ensure good manufacturing quality. However, for permanent or transient faults that occur during the use of the integrated circuit in an application, an online integrated test is needed as well. This procedure should ensure the detection and possibly the correction or the masking of these faults. This requirement of self-correction is sometimes necessary, especially in critical applications that require high security such as automotive, space or biomedical applications. We propose a fault-tolerant design for analogue and mixed-signal design complementary metal oxide (CMOS) circuits based on the quiescent current supply (IDDQ) testing. A defect can cause an increase in current consumption. IDDQ testing technique is based on the measurement of power supply current to distinguish between functional and failed circuits. The technique has been an effective testing method for detecting physical defects such as gate-oxide shorts, floating gates (open) and bridging defects in CMOS integrated circuits. An architecture called BICS (Built In Current Sensor) is used for monitoring the supply current (IDDQ) of the connected integrated circuit. If the measured current is not within the normal range, a defect is signalled and the system switches connection from the defective to a functional integrated circuit. The fault-tolerant technique is composed essentially by a double mirror built-in current sensor, allowing the detection of abnormal current consumption and blocks allowing the connection to redundant circuits, if a defect occurs. Spices simulations are performed to valid the proposed design.

Unavoidable electric current caused by inhomogeneities and its influence on measured material parameters of thermoelectric materials

NASA Astrophysics Data System (ADS)

Song, K.; Song, H. P.; Gao, C. F.

2018-03-01

It is well known that the key factor determining the performance of thermoelectric materials is the figure of merit, which depends on the thermal conductivity (TC), electrical conductivity, and Seebeck coefficient (SC). The electric current must be zero when measuring the TC and SC to avoid the occurrence of measurement errors. In this study, the complex-variable method is used to analyze the thermoelectric field near an elliptic inhomogeneity in an open circuit, and the field distributions are obtained in closed form. Our analysis shows that an electric current inevitably exists in both the matrix and the inhomogeneity even though the circuit is open. This unexpected electric current seriously affects the accuracy with which the TC and SC are measured. These measurement errors, both overall and local, are analyzed in detail. In addition, an error correction method is proposed based on the analytical results.

Arc fault detection system

DOEpatents

Jha, Kamal N.

1999-01-01

An arc fault detection system for use on ungrounded or high-resistance-grounded power distribution systems is provided which can be retrofitted outside electrical switchboard circuits having limited space constraints. The system includes a differential current relay that senses a current differential between current flowing from secondary windings located in a current transformer coupled to a power supply side of a switchboard, and a total current induced in secondary windings coupled to a load side of the switchboard. When such a current differential is experienced, a current travels through a operating coil of the differential current relay, which in turn opens an upstream circuit breaker located between the switchboard and a power supply to remove the supply of power to the switchboard.

JPS heater and sensor lightning qualification

NASA Technical Reports Server (NTRS)

Cook, M.

1989-01-01

Simulated lightning strike testing of the Redesigned Solid Rocket Motor (RSRM) field joint protection system heater assembly was performed at Thiokol Corp., Wendover Lightning Facility. Testing consisted of subjecting the lightning evaluation test article to simulated lightning strikes and evaluating the effects of heater cable transients on cables within the systems tunnel. The maximum short circuit current coupled onto a United Space Boosters, Inc. operational flight cable within the systems tunnel, induced by transients from all cables external to the systems tunnel, was 92 amperes. The maximum open-circuit voltage coupled was 316 volts. The maximum short circuit current coupled onto a United Space Boosters, Inc. operational flight cable within the systems tunnel, induced by heater power cable transients only, was 2.7 amperes; the maximum open-circuit voltage coupled was 39 volts. All heater power cable induced coupling was due to simulated lightning discharges only, no heater operating power was applied during the test. The results showed that, for a worst-case lightning discharge, the heater power cable is responsible for a 3.9 decibel increase in voltage coupling to operational flight cables within the systems tunnel. Testing also showed that current and voltage levels coupled onto cables within the systems tunnel are partially dependant on the relative locations of the cables within the systems tunnel.

Fault current limiter and alternating current circuit breaker

DOEpatents

Boenig, Heinrich J.

1998-01-01

A solid-state circuit breaker and current limiter for a load served by an alternating current source having a source impedance, the solid-state circuit breaker and current limiter comprising a thyristor bridge interposed between the alternating current source and the load, the thyristor bridge having four thyristor legs and four nodes, with a first node connected to the alternating current source, and a second node connected to the load. A coil is connected from a third node to a fourth node, the coil having an impedance of a value calculated to limit the current flowing therethrough to a predetermined value. Control means are connected to the thyristor legs for limiting the alternating current flow to the load under fault conditions to a predetermined level, and for gating the thyristor bridge under fault conditions to quickly reduce alternating current flowing therethrough to zero and thereafter to maintain the thyristor bridge in an electrically open condition preventing the alternating current from flowing therethrough for a predetermined period of time.

Fault current limiter and alternating current circuit breaker

DOEpatents

Boenig, H.J.

1998-03-10

A solid-state circuit breaker and current limiter are disclosed for a load served by an alternating current source having a source impedance, the solid-state circuit breaker and current limiter comprising a thyristor bridge interposed between the alternating current source and the load, the thyristor bridge having four thyristor legs and four nodes, with a first node connected to the alternating current source, and a second node connected to the load. A coil is connected from a third node to a fourth node, the coil having an impedance of a value calculated to limit the current flowing therethrough to a predetermined value. Control means are connected to the thyristor legs for limiting the alternating current flow to the load under fault conditions to a predetermined level, and for gating the thyristor bridge under fault conditions to quickly reduce alternating current flowing therethrough to zero and thereafter to maintain the thyristor bridge in an electrically open condition preventing the alternating current from flowing therethrough for a predetermined period of time. 9 figs.

Li-Ion Battery By-Pass Removal Qualification

NASA Astrophysics Data System (ADS)

Borthomieu, Y.; Pasquier, E.

2005-05-01

The reasons of the by-pass use on Space batteries is to avoid open circuit, short-circuit and dramatic performances drift on the power system. By-pass diodes are currently used in NiH2 batteries due to the high probability of open circuit at cell level. This probability is mainly linked to the possibility to have a hydrogen leak within the pressure vessel due to the high operating pressure (70 bars) that can induce cell open circuit.For the Lithium-Ion batteries, first items had bypass implemented by similarity, but:All the cell failure cases have been analyzed at battery level:- Cell Open circuit:In contrast to NiCd and NiH2 cells, Li-Ion cells can be put in parallel due to the fact the open circuit voltage (OCV) is linked to the State Of Charge (SOC).With cells in parallel, a battery open circuit failure can never be encountered even with a cell in open circuit.- Cell Short circuit:In case of cell short, the entire cells within the module will be shorted.- Cell capacity spread:If the capacities of cells in series are strongly diverging, the worst module limits the battery. In case the battery is no more able to deliver the requested power for which it was designed, the worst module has to be reversed. In reversal, a Li-Ion cell is self-shorted. So, the strong capacity decrease in one module leads to the short of this module.These three failure cases cover all the possible Li-Ion failure root causes.Considering these three events, the analysis demonstrates that the Li-Ion battery still functions in any case without any by-pass system because the design of the battery size always takes into account the loss of one module.Nevertheless, the by-pass removal should allow to:- Improve the battery reliability as each bypass unit represents a single - Reduce by at least 30 % of the total price of the battery,- Reduce significant weight at battery level,- Shorten the battery manufacturing lead time (at least8 months for by-pass purchasing), - Avoid US export licenses.A formal qualification of a Li-Ion battery without by- pass system is on going in the frame of an ESA ARTES 3 contract.

THERMAL RELAY DEVICE

DOEpatents

Murdoch, R.O.; Record, F.A.

1963-01-29

This invention relates to a fast-acting spring-loaded electrical switch which can break a 1500-volt circuit in one millisecond without arcing. In particular, a springloaded shorting bar is held in tension by a fusible wire. Passage of an electrical current pulse through the fusible wire breaks the fuse thereby releasing the shorting bar to open one and close another electrical circuit. (AEC)

Semiconductor electrolyte photovoltaic energy converter

NASA Technical Reports Server (NTRS)

Anderson, W. W.; Anderson, L. B.

1975-01-01

Feasibility and practicality of a solar cell consisting of a semiconductor surface in contact with an electrolyte are evaluated. Basic components and processes are detailed for photovoltaic energy conversion at the surface of an n-type semiconductor in contact with an electrolyte which is oxidizing to conduction band electrons. Characteristics of single crystal CdS, GaAs, CdSe, CdTe and thin film CdS in contact with aqueous and methanol based electrolytes are studied and open circuit voltages are measured from Mott-Schottky plots and open circuit photo voltages. Quantum efficiencies for short circuit photo currents of a CdS crystal and a 20 micrometer film are shown together with electrical and photovoltaic properties. Highest photon irradiances are observed with the GaAs cell.

Performance of epitaxial back surface field cells

NASA Technical Reports Server (NTRS)

Brandhorst, H. W., Jr.; Baraona, C. R.; Swartz, C. K.

1973-01-01

Epitaxial back surface field structures were formed by depositing a 10 micron thick 10 Omega-cm epitaxial silicon layer onto substrates with resistivities of 0.01, 0.1, 1.0 and 10 Omega-cm. A correlation between cell open-circuit voltage and substrate resistivity was observed and was compared to theory. The cells were also irradiated with 1 MeV electrons to a fluence of 5 X 10 to the 15th power e/cm2. The decrease of cell open-circuit voltage was in excellent agreement with theoretical predictions and the measured short circuit currents were within 2% of the prediction. Calculations are presented of optimum cell performance as functions of epitaxial layer thickness, radiation fluence and substrate diffusion length.

Improved Short-Circuit Protection for Power Cells in Series

NASA Technical Reports Server (NTRS)

Davies, Francis

2008-01-01

A scheme for protection against short circuits has been devised for series strings of lithium electrochemical cells that contain built-in short-circuit protection devices, which go into a high-resistance, current-limiting state when heated by excessive current. If cells are simply connected in a long series string to obtain a high voltage and a short circuit occurs, whichever short-circuit protection device trips first is exposed to nearly the full string voltage, which, typically, is large enough to damage the device. Depending on the specific cell design, the damage can defeat the protective function, cause a dangerous internal short circuit in the affected cell, and/or cascade to other cells. In the present scheme, reverse diodes rated at a suitably high current are connected across short series sub-strings, the lengths of which are chosen so that when a short-circuit protection device is tripped, the voltage across it does not exceed its rated voltage. This scheme preserves the resetting properties of the protective devices. It provides for bypassing of cells that fail open and limits cell reversal, though not as well as does the more-expensive scheme of connecting a diode across every cell.

Preliminary results on the conversion of laser energy into electricity

NASA Technical Reports Server (NTRS)

Thompson, R. W.; Manista, E. J.; Alger, D. L.

1978-01-01

A preliminary experiment was performed to investigate conversion of 10.6 micron laser energy to electrical energy via a laser-sustained argon plasma. Short-circuit currents of 0.7 A were measured between a thoriated-tungsten emitter and collector electrodes immersed in the laser-sustained argon plasma. Open-circuit voltages of about 1.5 V were inferred from the current-voltage load characteristics. The dominant mechanism of laser energy conversion is uncertain at this time. Much higher output powers appear possible.

Design of thin InGaAsN(Sb) n-i-p junctions for use in four-junction concentrating photovoltaic devices

NASA Astrophysics Data System (ADS)

Wilkins, Matthew M.; Gupta, James; Jaouad, Abdelatif; Bouzazi, Boussairi; Fafard, Simon; Boucherif, Abderraouf; Valdivia, Christopher E.; Arès, Richard; Aimez, Vincent; Schriemer, Henry P.; Hinzer, Karin

2017-04-01

Four-junction solar cells for space and terrestrial applications require a junction with a band gap of ˜1 eV for optimal performance. InGaAsN or InGaAsN(Sb) dilute nitride junctions have been demonstrated for this purpose, but in achieving the 14 mA/cm2 short-circuit current needed to match typical GaInP and GaAs junctions, the open-circuit voltage (VOC) and fill factor of these junctions are compromised. In multijunction devices incorporating materials with short diffusion lengths, we study the use of thin junctions to minimize sensitivity to varying material quality and ensure adequate transmission into lower junctions. An n-i-p device with 0.65-μm absorber thickness has sufficient short-circuit current, however, it relies less heavily on field-aided collection than a device with a 1-μm absorber. Our standard cell fabrication process, which includes a rapid thermal anneal of the contacts, yields a significant improvement in diffusion length and device performance. By optimizing a four-junction cell around a smaller 1-sun short-circuit current of 12.5 mA/cm2, we produced an InGaAsN(Sb) junction with open-circuit voltage of 0.44 V at 1000 suns (1 sun=100 mW/cm2), diode ideality factor of 1.4, and sufficient light transmission to allow >12.5 mA/cm2 in all four subcells.

Modeling of the Electric Characteristics of Solar Cells

NASA Astrophysics Data System (ADS)

Logan, Benjamin; Tzolov, Marian

The purpose of a solar cell is to covert solar energy, through means of photovoltaic action, into a sustainable electrical current that produces usable electricity. The electrical characteristics of solar cells can be modeled to better understand how they function. As an electrical device, solar cells can be conveniently represented as an equivalent electrical circuit with an ideal diode, ideal current source for the photovoltaic action, a shunt resistor for recombination, a resistor in series to account for contact resistance, and a resistor modeling external power consumption. The values of these elements have been modified to model dark and illumination states. Fitting the model to the experimental current voltage characteristics allows to determine the values of the equivalent circuit elements. Comparing values of open circuit voltage, short circuit current, and shunt resistor can determine factors such as the amount of recombination to diagnose problems in solar cells. The many measurable quantities of a solar cell's characteristics give guidance for the design when they are related with microscopic processes.

Electric control of emergent magnonic spin current and dynamic multiferroicity in magnetic insulators at finite temperatures

NASA Astrophysics Data System (ADS)

Wang, Xi-guang; Chotorlishvili, L.; Guo, Guang-hua; Berakdar, J.

2018-04-01

Conversion of thermal energy into magnonic spin currents and/or effective electric polarization promises new device functionalities. A versatile approach is presented here for generating and controlling open circuit magnonic spin currents and an effective multiferroicity at a uniform temperature with the aid of spatially inhomogeneous, external, static electric fields. This field applied to a ferromagnetic insulator with a Dzyaloshinskii-Moriya type coupling changes locally the magnon dispersion and modifies the density of thermally excited magnons in a region of the scale of the field inhomogeneity. The resulting gradient in the magnon density can be viewed as a gradient in the effective magnon temperature. This effective thermal gradient together with local magnon dispersion result in an open-circuit, electric field controlled magnonic spin current. In fact, for a moderate variation in the external electric field the predicted magnonic spin current is on the scale of the spin (Seebeck) current generated by a comparable external temperature gradient. Analytical methods supported by full-fledge numerics confirm that both, a finite temperature and an inhomogeneous electric field are necessary for this emergent non-equilibrium phenomena. The proposal can be integrated in magnonic and multiferroic circuits, for instance to convert heat into electrically controlled pure spin current using for example nanopatterning, without the need to generate large thermal gradients on the nanoscale.

Epitaxial solar-cell fabrication, phase 2

NASA Technical Reports Server (NTRS)

Daiello, R. V.; Robinson, P. H.; Kressel, H.

1977-01-01

Dichlorosilane (SiH2Cl2) was used as the silicon source material in all of the epitaxial growths. Both n/p/p(+) and p/n/n(+) structures were studied. Correlations were made between the measured profiles and the solar cell parameters, especially cell open-circuit voltage. It was found that in order to obtain consistently high open-circuit voltage, the epitaxial techniques used to grow the surface layer must be altered to obtain very abrupt doping profiles in the vicinity of the junction. With these techniques, it was possible to grow reproducibly both p/n/n(+) and n/p/p(+) solar cell structures having open-circuit voltages in the 610- to 630-mV range, with fill-factors in excess of 0.80 and AM-1 efficiencies of about 13%. Combinations and comparisons of epitaxial and diffused surface layers were also made. Using such surface layers, we found that the blue response of epitaxial cells could be improved, resulting in AM-1 short-circuit current densities of about 30 mA/cm sq. The best cells fabricated in this manner had AM-1 efficiency of 14.1%.

High efficiency organic photovoltaic cells based on a vapor deposited squaraine donor

NASA Astrophysics Data System (ADS)

Wang, Siyi; Mayo, Elizabeth I.; Perez, M. Dolores; Griffe, Laurent; Wei, Guodan; Djurovich, Peter I.; Forrest, Stephen R.; Thompson, Mark E.

2009-06-01

2,4-bis[4-(N ,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine (SQ) is used as a donor material in vapor deposited organic heterojunction photovoltaic cells. Devices with the structure indium tin oxide/SQ (x)/C60 (400Å)/bathocuproine (100Å)/Al (1000Å), where x =65, 110, 150, and 200Å were compared. Devices with x =65Å exhibited a power conversion efficiency of 3.1% under 1sun, AM1.5G simulated solar irradiation, giving an open circuit voltage of 0.76±0.01V, a short circuit current of 7.01±0.05mA/cm2, and a fill factor of 0.56±0.05. Thicker SQ films lead to lower short circuit currents and fill factors, giving conversion efficiencies in the range of 2.6% to 3.2%. The demonstration of sublimable SQ as a donor material opens up a family of compounds for use in small molecule based heterojunction photovoltaics.

Achieving 12.8% Efficiency by Simultaneously Improving Open-Circuit Voltage and Short-Circuit Current Density in Tandem Organic Solar Cells.

PubMed

Qin, Yunpeng; Chen, Yu; Cui, Yong; Zhang, Shaoqing; Yao, Huifeng; Huang, Jiang; Li, Wanning; Zheng, Zhong; Hou, Jianhui

2017-06-01

Tandem organic solar cells (TOSCs), which integrate multiple organic photovoltaic layers with complementary absorption in series, have been proved to be a strong contender in organic photovoltaic depending on their advantages in harvesting a greater part of the solar spectrum and more efficient photon utilization than traditional single-junction organic solar cells. However, simultaneously improving open circuit voltage (V oc ) and short current density (J sc ) is a still particularly tricky issue for highly efficient TOSCs. In this work, by employing the low-bandgap nonfullerene acceptor, IEICO, into the rear cell to extend absorption, and meanwhile introducing PBDD4T-2F into the front cell for improving V oc , an impressive efficiency of 12.8% has been achieved in well-designed TOSC. This result is also one of the highest efficiencies reported in state-of-the-art organic solar cells. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The ringer - An efficient, high repetition rate circuit for electromagnetic launchers

NASA Astrophysics Data System (ADS)

Giorgi, D.; Helava, H.; Lindner, K.; Long, J.; Zucker, O.

1989-01-01

The Meatgrinder is an efficient, current-multiplying circuit which can be used to optimize the energy transfer to various electromagnetic gun configurations. The authors present a simple variant of the Meatgrinder circuit which permits a first-order current profiling into the gun and recovery of the inductive energy in the barrel at a high repetition rate. The circuit is basically a one-stage Meatgrinder which utilizes the ringing of the energy storage capacitor (less than 40 percent reversal) to perform the opening switch function and a solid-state diode as the crowbar switch between the two mutually coupled inductors. With resonant charging, this results in a completely passive, high-repetiton-rate electromagnetic-gun power supply. Since most of the barrel energy is recovered, a railgun with negligible muzzle flash can be realized.

Coaxial stub tuner

NASA Technical Reports Server (NTRS)

Chern, Shy-Shiun (Inventor)

1981-01-01

A coaxial stub tuner assembly is comprised of a short circuit branch diametrically opposite an open circuit branch. The stub of the short circuit branch is tubular, and the stub of the open circuit branch is a rod which extends through the tubular stub into the open circuit branch. The rod is threaded at least at its outer end, and the tubular stub is internally threaded to receive the threads of the rod. The open circuit branch can be easily tuned by turning the threaded rod in the tubular stub to adjust the length of the rod extending into the open circuit branch.

Nondestructive test determines overload destruction characteristics of current limiter fuses

NASA Technical Reports Server (NTRS)

Swartz, G. A.

1968-01-01

Nondestructive test predicts the time required for current limiters to blow /open the circuit/ when subjected to a given overload. The test method is based on an empirical relationship between the voltage rise across a current limiter for a fixed time interval and the time to blow.

Arc fault detection system

DOEpatents

Jha, K.N.

1999-05-18

An arc fault detection system for use on ungrounded or high-resistance-grounded power distribution systems is provided which can be retrofitted outside electrical switchboard circuits having limited space constraints. The system includes a differential current relay that senses a current differential between current flowing from secondary windings located in a current transformer coupled to a power supply side of a switchboard, and a total current induced in secondary windings coupled to a load side of the switchboard. When such a current differential is experienced, a current travels through a operating coil of the differential current relay, which in turn opens an upstream circuit breaker located between the switchboard and a power supply to remove the supply of power to the switchboard. 1 fig.

CdS/p-Si solar cells made by serigraphy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garcia, F.J.; Ortiz-Conde, A.; Sa-Neto, A.

1988-04-11

CdS/p-Si solar cells have been fabricated depositing the CdS layer by serigraphy. Open circuit voltages of 538 mV, short circuit current densities of 32 mA cm/sup -2/, fill factors of 0.52, and conversion efficiencies of 8.1% have been measured under 100 mW cm/sup -2/ (AM1) simulated solar illumination.

Radial direct bandgap p-i-n GaNP microwire solar cells with enhanced short circuit current

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sukrittanon, Supanee; Liu, Ren; Pan, Janet L.

2016-08-07

We report the demonstration of dilute nitride heterostructure core/shell microwire solar cells utilizing the combination of top-down reactive-ion etching to create the cores (GaP) and molecular beam epitaxy to create the shells (GaNP). Systematic studies of cell performance over a series of microwire lengths, array periods, and microwire sidewall morphologies examined by transmission electron microscopy were conducted to shed light on performance-limiting factors and to optimize the cell efficiency. We show by microscopy and correlated external quantum efficiency characterization that the open circuit voltage is degraded primarily due to the presence of defects at the GaP/GaNP interface and in themore » GaNP shells, and is not limited by surface recombination. Compared to thin film solar cells in the same growth run, the microwire solar cells exhibit greater short circuit current but poorer open circuit voltage due to greater light absorption and number of defects in the microwire structure, respectively. The comprehensive understanding presented in this work suggests that performance benefits of dilute nitride microwire solar cells can be achieved by further tuning of the epitaxial quality of the underlying materials.« less

Radial direct bandgap p-i-n GaNP microwire solar cells with enhanced short circuit current

NASA Astrophysics Data System (ADS)

Sukrittanon, Supanee; Liu, Ren; Breeden, Michael C.; Pan, Janet L.; Jungjohann, K. L.; Tu, Charles W.; Dayeh, Shadi A.

2016-08-01

We report the demonstration of dilute nitride heterostructure core/shell microwire solar cells utilizing the combination of top-down reactive-ion etching to create the cores (GaP) and molecular beam epitaxy to create the shells (GaNP). Systematic studies of cell performance over a series of microwire lengths, array periods, and microwire sidewall morphologies examined by transmission electron microscopy were conducted to shed light on performance-limiting factors and to optimize the cell efficiency. We show by microscopy and correlated external quantum efficiency characterization that the open circuit voltage is degraded primarily due to the presence of defects at the GaP/GaNP interface and in the GaNP shells, and is not limited by surface recombination. Compared to thin film solar cells in the same growth run, the microwire solar cells exhibit greater short circuit current but poorer open circuit voltage due to greater light absorption and number of defects in the microwire structure, respectively. The comprehensive understanding presented in this work suggests that performance benefits of dilute nitride microwire solar cells can be achieved by further tuning of the epitaxial quality of the underlying materials.

Radial direct bandgap p-i-n GaNP microwire solar cells with enhanced short circuit current

DOE PAGES

Sukrittanon, Supanee; Liu, Ren; Breeden, Michael C.; ...

2016-08-07

Here, we report the demonstration of dilute nitride heterostructure core/shell microwire solar cells utilizing the combination of top-down reactive-ion etching to create the cores (GaP) and molecular beam epitaxy to create the shells (GaNP). Systematic studies of cell performance over a series of microwire lengths, array periods, and microwire sidewall morphologies examined by transmission electron microscopy were conducted to shed light on performance-limiting factors and to optimize the cell efficiency. We also show by microscopy and correlated external quantum efficiency characterization that the open circuit voltage is degraded primarily due to the presence of defects at the GaP/GaNP interface andmore » in the GaNP shells, and is not limited by surface recombination. Compared to thin film solar cells in the same growth run, the microwire solar cells exhibit greater short circuit current but poorer open circuit voltage due to greater light absorption and number of defects in the microwire structure, respectively. Finally, we present performance benefits of dilute nitride microwire solar cells and show that it can be achieved by further tuning of the epitaxial quality of the underlying materials.« less

Ultra-high aspect ratio copper nanowires as transparent conductive electrodes for dye sensitized solar cells

NASA Astrophysics Data System (ADS)

Zhu, Zhaozhao; Mankowski, Trent; Shikoh, Ali Sehpar; Touati, Farid; Benammar, Mohieddine A.; Mansuripur, Masud; Falco, Charles M.

2016-09-01

We report the synthesis of ultra-high aspect ratio copper nanowires (CuNW) and fabrication of CuNW-based transparent conductive electrodes (TCE) with high optical transmittance (>80%) and excellent sheet resistance (Rs <30 Ω/sq). These CuNW TCEs are subsequently hybridized with aluminum-doped zinc oxide (AZO) thin-film coatings, or platinum thin film coatings, or nickel thin-film coatings. Our hybrid transparent electrodes can replace indium tin oxide (ITO) films in dye-sensitized solar cells (DSSCs) as either anodes or cathodes. We highlight the challenges of integrating bare CuNWs into DSSCs, and demonstrate that hybridization renders the solar cell integrations feasible. The CuNW/AZO-based DSSCs have reasonably good open-circuit voltage (Voc = 720 mV) and short-circuit current-density (Jsc = 0.96 mA/cm2), which are comparable to what is obtained with an ITO-based DSSC fabricated with a similar process. Our CuNW-Ni based DSSCs exhibit a good open-circuit voltage (Voc = 782 mV) and a decent short-circuit current (Jsc = 3.96 mA/cm2), with roughly 1.5% optical-to-electrical conversion efficiency.

Simultaneous improvement in short circuit current, open circuit voltage, and fill factor of polymer solar cells through ternary strategy.

PubMed

An, Qiaoshi; Zhang, Fujun; Li, Lingliang; Wang, Jian; Sun, Qianqian; Zhang, Jian; Tang, Weihua; Deng, Zhenbo

2015-02-18

We present a smart strategy to simultaneously increase the short circuit current (Jsc), the open circuit voltage (Voc), and the fill factor (FF) of polymer solar cells (PSCs). A two-dimensional conjugated small molecule photovoltaic material (SMPV1), as the second electron donor, was doped into the blend system of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C71-butyric acid methyl (PC71BM) to form ternary PSCs. The ternary PSCs with 5 wt % SMPV1 doping ratio in donors achieve 4.06% champion power conversion efficiency (PCE), corresponding to about 21.2% enhancement compared with the 3.35% PCE of P3HT:PC71BM-based PSCs. The underlying mechanism on performance improvement of ternary PSCs can be summarized as (i) harvesting more photons in the longer wavelength region to increase Jsc; (ii) obtaining the lower mixed highest occupied molecular orbital (HOMO) energy level by incorporating SMPV1 to increase Voc; (iii) forming the better charge carrier transport channels through the cascade energy level structure and optimizing phase separation of donor/acceptor materials to increase Jsc and FF.

77 FR 37862 - Open-Circuit Self-Contained Breathing Apparatus Remaining Service-Life Indicator Performance...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-06-25

...; NIOSH-258] Open-Circuit Self-Contained Breathing Apparatus Remaining Service-Life Indicator Performance... open-circuit self-contained breathing apparatus (OC- SCBA) remaining service-life indicators... ``Open-Circuit Self-Contained Breathing Apparatus Remaining Service-Life Indicator Performance...

Towards a rechargeable alcohol biobattery

NASA Astrophysics Data System (ADS)

Addo, Paul K.; Arechederra, Robert L.; Minteer, Shelley D.

This research focused on the transition of biofuel cell technology to rechargeable biobatteries. The bioanode compartment of the biobattery consisted of NAD-dependent alcohol dehydrogenase (ADH) immobilized into a carbon composite paste with butyl-3-methylimidazolium chloride (BMIMCl) ionic liquid serving as the electrolyte. Ferrocene was added to shuttle electrons to/from the electrode surface/current collector. The bioanode catalyzed the oxidation of ethanol to acetaldehyde in discharge mode. This bioanode was coupled to a cathode that consisted of Prussian Blue in a carbon composite paste with Nafion 212 acting as the separator between the two compartments. The biobattery can be fabricated in a charged mode with ethanol and have an open circuit potential of 0.8 V in the original state prior to charging or in the discharged mode with acetaldehyde and have an open circuit potential of 0.05 V. After charging it has an open circuit potential of 1.2 V and a maximum power density of 13.0 μW cm -3 and a maximum current density of 35.0 μA cm -3, respectively. The stability and efficiency of the biobattery were studied by cycling continuously at a discharging current of 0.4 mA and the results obtained showed reasonable stability over 50 cycles. This is a new type of secondary battery inspired by the metabolic processes of the living cell, which is an effective energy conversion system.

Charge Transport in Carbon Nanotubes-Polymer Composite Photovoltaic Cells

PubMed Central

Ltaief, Adnen; Bouazizi, Abdelaziz; Davenas, Joel

2009-01-01

We investigate the dark and illuminated current density-voltage (J/V) characteristics of poly(2-methoxy-5-(2’-ethylhexyloxy)1-4-phenylenevinylene) (MEH-PPV)/single-walled carbon nanotubes (SWNTs) composite photovoltaic cells. Using an exponential band tail model, the conduction mechanism has been analysed for polymer only devices and composite devices, in terms of space charge limited current (SCLC) conduction mechanism, where we determine the power parameters and the threshold voltages. Elaborated devices for MEH-PPV:SWNTs (1:1) composites showed a photoresponse with an open-circuit voltage Voc of 0.4 V, a short-circuit current density JSC of 1 µA/cm² and a fill factor FF of 43%. We have modelised the organic photovoltaic devices with an equivalent circuit, where we calculated the series and shunt resistances.

Open-circuit voltage improvements in low-resistivity solar cells

NASA Technical Reports Server (NTRS)

Godlewski, M. P.; Klucher, T. M.; Mazaris, G. A.; Weizer, V. G.

1979-01-01

Mechanisms limiting the open-circuit voltage in 0.1 ohm-cm solar cells were investigated. It was found that a rather complicated multistep diffusion process could produce cells with significantly improved voltages. The voltage capabilities of various laboratory cells were compared independent of their absorption and collection efficiencies. This was accomplished by comparing the cells on the basis of their saturation currents or, equivalently, comparing their voltage outputs at a constant current-density level. The results show that for both the Lewis diffused emitter cell and the Spire ion-implanted emitter cell the base component of the saturation current is voltage controlling. The evidence for the University of Florida cells, although not very conclusive, suggests emitter control of the voltage in this device. The data suggest further that the critical voltage-limiting parameter for the Lewis cell is the electron mobility in the cell base.

Direct Analysis of JV-Curves Applied to an Outdoor-Degrading CdTe Module (Presentation)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jordan, D; Kurtz, S.; Ulbrich, C.

2014-03-01

We present the application of a phenomenological four parameter equation to fit and analyze regularly measured current density-voltage JV curves of a CdTe module during 2.5 years of outdoor operation. The parameters are physically meaningful, i.e. the short circuit current density Jsc, open circuit voltage Voc and differential resistances Rsc, and Roc. For the chosen module, the fill factor FF degradation overweighs the degradation of Jsc and Voc. Interestingly, with outdoor exposure, not only the conductance at short circuit, Gsc, increases but also the Gsc(Jsc)-dependence. This is well explained with an increase in voltage dependent charge carrier collection in CdTe.

Developments toward an 18% efficient silicon solar cell

NASA Technical Reports Server (NTRS)

Meulenberg, A., Jr.

1983-01-01

Limitations to increased open-circuit voltage were identified and experimentally verified for 0.1 ohm-cm solar cells with heavily doped emitters. After major reduction in the dark current contribution from the metal-silicon interface of the grid contacts, the surface recombination velocity of the oxide-silicon interface of shallow junction solar cells is the limiting factor. In deep junction solar cells, where the junction field does not aid surface collection, the emitter bulk is the limiting factor. Singly-diffused, shallow junction cells have been fabricated with open circuit voltages in excess of 645 mV. Double-diffusion shallow and deep junctions cells have displayed voltages above 650 mV. MIS solar cells formed on 0.1 ohm-cm substrates have exibited the lowest dark currents produced in the course of the contract work.

The importance of surface recombination and energy-bandgap narrowing in p-n-junction silicon solar cells

NASA Technical Reports Server (NTRS)

Fossum, J. G.; Lindholm, F. A.; Shibib, M. A.

1979-01-01

Experimental data demonstrating the sensitivity of open-circuit voltage to front-surface conditions are presented for a variety of p-n-junction silicon solar cells. Analytical models accounting for the data are defined and supported by additional experiments. The models and the data imply that a) surface recombination significantly limits the open-circuit voltage (and the short-circuit current) of typical silicon cells, and b) energy-bandgap narrowing is important in the manifestation of these limitations. The models suggest modifications in both the structural design and the fabrication processing of the cells that would result in substantial improvements in cell performance. The benefits of one such modification - the addition of a thin thermal silicon-dioxide layer on the front surface - are indicated experimentally.

A low power, on demand electrothermal valve for wireless drug delivery applications

PubMed Central

Li, Po-Ying; Givrad, Tina K.; Sheybani, Roya; Holschneider, Daniel P.; Maarek, Jean-Michel I.

2014-01-01

We present a low power, on demand Parylene MEMS electrothermal valve. A novel Ω-shaped thermal resistive element requires low power (~mW) and enables rapid valve opening (~ms). Using both finite element analysis and valve opening experiments, a robust resistive element design for improved valve opening performance in water was obtained. In addition, a thermistor, as an inrush current limiter, was added into the valve circuit to provide variable current ramping. Wireless activation of the valve using RF inductive power transfer was demonstrated. PMID:20024057

An improved low-voltage ride-through performance of DFIG based wind plant using stator dynamic composite fault current limiter.

PubMed

Gayen, P K; Chatterjee, D; Goswami, S K

2016-05-01

In this paper, an enhanced low-voltage ride-through (LVRT) performance of a grid connected doubly fed induction generator (DFIG) has been presented with the usage of stator dynamic composite fault current limiter (SDCFCL). This protection circuit comprises of a suitable series resistor-inductor combination and parallel bidirectional semiconductor switch. The SDCFCL facilitates double benefits such as reduction of rotor induced open circuit voltage due to increased value of stator total inductance and concurrent increase of rotor impedance. Both effects will limit rotor circuit over current and over voltage situation more secured way in comparison to the conventional scheme like the dynamic rotor current limiter (RCL) during any type of fault situation. The proposed concept is validated through the simulation study of the grid integrated 2.0MW DFIG. Copyright © 2016 ISA. Published by Elsevier Ltd. All rights reserved.

Switching of High-Voltage Cable Lines with Shunt Reactors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sheskin, E. B., E-mail: evgeniy.sheskin@gmail.com; Evdokunin, G. A.

2016-05-15

The problem of disconnecting high-voltage cable lines with shunt reactors by SF{sub 6} circuit breakers is discussed. In these schemes it is possible to have a significant aperiodic component of the circuit breaker current that can prevent opening of the breaker. The authors propose methods for application to cable transmission lines which they believe will be optimal for ensuring normal disconnects.

A No-Arc DC Circuit Breaker Based on Zero-Current Interruption

NASA Astrophysics Data System (ADS)

Xiang, Xuewei; Chai, Jianyun; Sun, Xudong

2017-05-01

A dc system has no natural current zero-crossing point, so a dc arc is more difficult to extinguish than an ac arc. In order to effectively solve the problem of the dc arc, this paper proposes a dc circuit breaker (DCCB) capable of implementing a no-arc interruption. The proposed DCCB includes a main branch consisting of a mechanical switch, a diode and a current-limiting inductor, a semi-period resonance circuit consisting of a diode, an inductor and a capacitor, and a buffer branch consisting of a capacitor, a thyristor and a resistor. The mechanical switch is opened in a zero-current state, and the overvoltage caused by the counter electromotive force of the inductor does not exist. Meanwhile, the capacitor has a buffering effect on the voltage. The rising of the voltage of the mechanical switch is slower than the rising of the insulating strength of a contact gap of the mechanical switch, resulting in the contact gap not able to be broken down. Thus, the arc cannot be generated. The simulation results show that the proposed DCCB does not generate the arc in the interruption process, the rise rate of the short circuit current can be effectively limited, and the short circuit fault point can be rapidly isolated from the dc power supply.

Electrothermal Feedback and Absorption-Induced Open-Circuit-Voltage Turnover in Solar Cells

NASA Astrophysics Data System (ADS)

Ullbrich, Sascha; Fischer, Axel; Tang, Zheng; Ávila, Jorge; Bolink, Henk J.; Reineke, Sebastian; Vandewal, Koen

2018-05-01

Solar panels easily heat up upon intense solar radiation due to excess energy dissipation of the absorbed photons or by nonradiative recombination of charge carriers. Still, photoinduced self-heating is often ignored when characterizing lab-sized samples. For light-intensity-dependent measurements of the open-circuit voltage (Suns-VO C ), allowing us to characterize the recombination mechanism, sample heating is often not considered, although almost 100% of the absorbed energy is converted into heat. Here, we show that the frequently observed stagnation or even decrease in VOC at increasingly high light intensities can be explained by considering an effective electrothermal feedback between the recombination current and the open-circuit voltage. Our analytical model fully explains the experimental data for various solar-cell technologies, comprising conventional inorganic semiconductors as well as organic and perovskite materials. Furthermore, the model can be exploited to determine the ideality factor, the effective gap, and the temperature rise from a single Suns-VOC measurement at ambient conditions.

Transient analysis of unbalanced short circuits of the ERDA-NASA 100 kW wind turbine alternator

NASA Technical Reports Server (NTRS)

Hwang, H. H.; Gilbert, L. J.

1976-01-01

Unbalanced short-circuit faults on the alternator of the ERDA-NASA Mod-O100-kW experimental wind turbine are studied. For each case, complete solutions for armature, field, and damper-circuit currents; short-circuit torque; and open-phase voltage are derived directly by a mathematical analysis. Formulated results are tabulated. For the Mod-O wind turbine alternator, numerical calculations are given, and results are presented by graphs. Comparisons for significant points among the more important cases are summarized. For these cases the transients are found to be potentially severe. The effect of the alternator neutral-to-ground impedance is evaluated.

Design and flight performance evaluation of the Mariners 6, 7, and 9 short-circuit current, open-circuit voltage transducers

NASA Technical Reports Server (NTRS)

Patterson, R. E.

1973-01-01

The purpose of the short-circuit voltage transducer is to provide engineering data to aid the evaluation of array performance during flight. The design, fabrication, calibration, and in-flight performance of the transducers onboard the Mariner 6, 7 and 9 spacecrafts are described. No significant differences were observed in the in-flight electrical performance of the three transducers. The transducers did experience significant losses due to coverslides or adhesive darkening, increased surface reflection, or spectral shifts within coverslide assembly. Mariner 6, 7 and 9 transducers showed non-cell current degradations of 3-1/2%, 3%, and 4%, respectively at Mars encounter and 6%, 3%, and 4-12%, respectively at end of mission. Mariner 9 solar Array Test 2 showed 3-12% current degradation while the transducer showed 4-12% degradation.

Switch contact device for interrupting high current, high voltage, AC and DC circuits

DOEpatents

Via, Lester C.; Witherspoon, F. Douglas; Ryan, John M.

2005-01-04

A high voltage switch contact structure capable of interrupting high voltage, high current AC and DC circuits. The contact structure confines the arc created when contacts open to the thin area between two insulating surfaces in intimate contact. This forces the arc into the shape of a thin sheet which loses heat energy far more rapidly than an arc column having a circular cross-section. These high heat losses require a dramatic increase in the voltage required to maintain the arc, thus extinguishing it when the required voltage exceeds the available voltage. The arc extinguishing process with this invention is not dependent on the occurrence of a current zero crossing and, consequently, is capable of rapidly interrupting both AC and DC circuits. The contact structure achieves its high performance without the use of sulfur hexafluoride.

Optimization of the short-circuit current in an InP nanowire array solar cell through opto-electronic modeling.

PubMed

Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

2016-09-23

InP nanowire arrays with axial p-i-n junctions are promising devices for next-generation photovoltaics, with a demonstrated efficiency of 13.8%. However, the short-circuit current in such arrays does not match their absorption performance. Here, through combined optical and electrical modeling, we study how the absorption of photons and separation of the resulting photogenerated electron-hole pairs define and limit the short-circuit current in the nanowires. We identify how photogenerated minority carriers in the top n segment (i.e. holes) diffuse to the ohmic top contact where they recombine without contributing to the short-circuit current. In our modeling, such contact recombination can lead to a 60% drop in the short-circuit current. To hinder such hole diffusion, we include a gradient doping profile in the n segment to create a front surface barrier. This approach leads to a modest 5% increase in the short-circuit current, limited by Auger recombination with increased doping. A more efficient approach is to switch the n segment to a material with a higher band gap, like GaP. Then, a much smaller number of holes is photogenerated in the n segment, strongly limiting the amount that can diffuse and disappear into the top contact. For a 500 nm long top segment, the GaP approach leads to a 50% higher short-circuit current than with an InP top segment. Such a long top segment could facilitate the fabrication and contacting of nanowire array solar cells. Such design schemes for managing minority carriers could open the door to higher performance in single- and multi-junction nanowire-based solar cells.

42 CFR 84.95 - Service time test; open-circuit apparatus.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 42 Public Health 1 2011-10-01 2011-10-01 false Service time test; open-circuit apparatus. 84.95...-Contained Breathing Apparatus § 84.95 Service time test; open-circuit apparatus. (a) Service time will be measured with a breathing machine as described in § 84.88. (b) The open-circuit apparatus will be...

42 CFR 84.93 - Gas flow test; open-circuit apparatus.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 42 Public Health 1 2011-10-01 2011-10-01 false Gas flow test; open-circuit apparatus. 84.93...-Contained Breathing Apparatus § 84.93 Gas flow test; open-circuit apparatus. (a) A static-flow test will be performed on all open-circuit apparatus. (b) The flow from the apparatus shall be greater than 200 liters...

42 CFR 84.93 - Gas flow test; open-circuit apparatus.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 42 Public Health 1 2010-10-01 2010-10-01 false Gas flow test; open-circuit apparatus. 84.93...-Contained Breathing Apparatus § 84.93 Gas flow test; open-circuit apparatus. (a) A static-flow test will be performed on all open-circuit apparatus. (b) The flow from the apparatus shall be greater than 200 liters...

42 CFR 84.95 - Service time test; open-circuit apparatus.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 42 Public Health 1 2010-10-01 2010-10-01 false Service time test; open-circuit apparatus. 84.95...-Contained Breathing Apparatus § 84.95 Service time test; open-circuit apparatus. (a) Service time will be measured with a breathing machine as described in § 84.88. (b) The open-circuit apparatus will be...

Driver for solar cell I-V characteristic plots

NASA Technical Reports Server (NTRS)

Turner, G. B. (Inventor)

1980-01-01

A bipolar voltage ramp generator which applies a linear voltage through a resistor to a solar cell for plotting its current versus voltage (I-V) characteristic between short circuit and open circuit conditions is disclosed. The generator has automatic stops at the end points. The resistor serves the multiple purpose of providing a current sensing resistor, setting the full-scale current value, and providing a load line with a slope approximately equal to one, such that it will pass through the origin and the approximate center of the I-V curve with about equal distance from that center to each of the end points.

Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

NASA Technical Reports Server (NTRS)

Ringel, S. A.; Carlin, J. A.; Andre, C. L.; Hudait, M. K.; Gonzalez, M.; Wilt, D. M.; Clark, E. B.; Jenkins, P.; Scheiman, D.; Allerman, A.

2002-01-01

Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

The Application of Deterministic Spectral Domain Method to the Analysis of Planar Circuit Discontinuities on Open Substrates

DTIC Science & Technology

1990-08-01

the spectral domain is extended to include the effects of two-dimensional, two-component current flow in planar transmission line discontinuities 6n...PROFESSOR: Tatsuo Itoh A deterministic formulation of the method of moments carried out in the spectral domain is extended to include the effects of...two-dimensional, two- component current flow in planar transmission line discontinuities on open substrates. The method includes the effects of space

Effect of povidone-iodine addition on the corrosion behavior of cp-Ti in normal saline.

PubMed

Bhola, Rahul; Bhola, Shaily M; Mishra, Brajendra; Olson, David L

2010-05-01

The effect of various concentrations of povidone-iodine (PI) on the corrosion behavior of a commercially pure titanium alloy (Ti-1) has been investigated in normal saline solution to simulate the povidone-iodine addition in an oral environment. The open circuit potential, electrochemical impedance spectroscopy and potentiodynamic polarization measurements have been used to characterize the electrochemical phenomena occurring on the alloy surface. The open circuit potential values for Ti-1 in various concentrations of PI shift considerably towards noble direction as compared to pure normal saline. In the potentiodynamic polarization curve for Ti-1 in various solutions, the cathodic current density has increased for all concentrations of PI and the anodic current density has decreased. Only the 0.1% PI concentration is able to inhibit corrosion of Ti-1 in normal saline and the other higher concentrations studied, accelerate corrosion. The EIS data for Ti-1 in normal saline and in various concentrations of PI follows a one time constant circuit, suggesting the formation of a single passive film on Ti-1 which is not altered by the addition of PI to normal saline.

Two years of on-orbit gallium arsenide performance from the LIPS solar cell panel experiment

NASA Technical Reports Server (NTRS)

Francis, R. W.; Betz, F. E.

1985-01-01

The LIPS on-orbit performance of the gallium arsenide panel experiment was analyzed from flight operation telemetry data. Algorithms were developed to calculate the daily maximum power and associated solar array parameters by two independent methods. The first technique utilizes a least mean square polynomial fit to the power curve obtained with intensity and temperature corrected currents and voltages; whereas, the second incorporates an empirical expression for fill factor based on an open circuit voltage and the calculated series resistance. Maximum power, fill factor, open circuit voltage, short circuit current and series resistance of the solar cell array are examined as a function of flight time. Trends are analyzed with respect to possible mechanisms which may affect successive periods of output power during 2 years of flight operation. Degradation factors responsible for the on-orbit performance characteristics of gallium arsenide are discussed in relation to the calculated solar cell parameters. Performance trends and the potential degradation mechanisms are correlated with existing laboratory and flight data on both gallium arsenide and silicon solar cells for similar environments.

Oxygen permeation through Nafion 117 membrane and its impact on efficiency of polymer membrane ethanol fuel cell

NASA Astrophysics Data System (ADS)

Jablonski, Andrzej; Kulesza, Pawel J.; Lewera, Adam

2011-05-01

We investigate oxygen permeation through Nafion 117 membrane in a direct ethanol fuel cell and elucidate how it affects the fuel cell efficiency. An obvious symptom of oxygen permeation is the presence of significant amounts of acetaldehyde and acetic acid in the mixture leaving anode when no current was drawn from the fuel cell (i.e. under the open circuit conditions). This parasitic process severely lowers efficiency of the fuel cell because ethanol is found to be directly oxidized on the surface of catalyst by oxygen coming through membrane from cathode in the absence of electric current flowing in the external circuit. Three commonly used carbon-supported anode catalysts are investigated, Pt, Pt/Ru and Pt/Sn. Products of ethanol oxidation are determined qualitatively and quantitatively at open circuit as a function of temperature and pressure, and we aim at determining whether the oxygen permeation or the catalyst's activity limits the parasitic ethanol oxidation. Our results strongly imply the need to develop more selective membranes that would be less oxygen permeable.

Dual-junction GaAs solar cells and their application to smart stacked III–V//Si multijunction solar cells

NASA Astrophysics Data System (ADS)

Sugaya, Takeyoshi; Tayagaki, Takeshi; Aihara, Taketo; Makita, Kikuo; Oshima, Ryuji; Mizuno, Hidenori; Nagato, Yuki; Nakamoto, Takashi; Okano, Yoshinobu

2018-05-01

We report high-quality dual-junction GaAs solar cells grown using solid-source molecular beam epitaxy and their application to smart stacked III–V//Si quadruple-junction solar cells with a two-terminal configuration for the first time. A high open-circuit voltage of 2.94 eV was obtained in an InGaP/GaAs/GaAs triple-junction top cell that was stacked to a Si bottom cell. The short-circuit current density of a smart stacked InGaP/GaAs/GaAs//Si solar cell was in good agreement with that estimated from external quantum efficiency measurements. An efficiency of 18.5% with a high open-circuit voltage of 3.3 V was obtained in InGaP/GaAs/GaAs//Si two-terminal solar cells.

System for automatically switching transformer coupled lines

NASA Technical Reports Server (NTRS)

Dwinell, W. S. (Inventor)

1979-01-01

A system is presented for automatically controlling transformer coupled alternating current electric lines. The secondary winding of each transformer is provided with a center tap. A switching circuit is connected to the center taps of a pair of secondary windings and includes a switch controller. An impedance is connected between the center taps of the opposite pair of secondary windings. The switching circuit has continuity when the AC lines are continuous and discontinuity with any disconnect of the AC lines. Normally open switching means are provided in at least one AC line. The switch controller automatically opens the switching means when the AC lines become separated.

Coaxial multishell nanowires with high-quality electronic interfaces and tunable optical cavities for ultrathin photovoltaics.

PubMed

Kempa, Thomas J; Cahoon, James F; Kim, Sun-Kyung; Day, Robert W; Bell, David C; Park, Hong-Gyu; Lieber, Charles M

2012-01-31

Silicon nanowires (NWs) could enable low-cost and efficient photovoltaics, though their performance has been limited by nonideal electrical characteristics and an inability to tune absorption properties. We overcome these limitations through controlled synthesis of a series of polymorphic core/multishell NWs with highly crystalline, hexagonally-faceted shells, and well-defined coaxial (p/n) and p/intrinsic/n (p/i/n) diode junctions. Designed 200-300 nm diameter p/i/n NW diodes exhibit ultralow leakage currents of approximately 1 fA, and open-circuit voltages and fill-factors up to 0.5 V and 73%, respectively, under one-sun illumination. Single-NW wavelength-dependent photocurrent measurements reveal size-tunable optical resonances, external quantum efficiencies greater than unity, and current densities double those for silicon films of comparable thickness. In addition, finite-difference-time-domain simulations for the measured NW structures agree quantitatively with the photocurrent measurements, and demonstrate that the optical resonances are due to Fabry-Perot and whispering-gallery cavity modes supported in the high-quality faceted nanostructures. Synthetically optimized NW devices achieve current densities of 17 mA/cm(2) and power-conversion efficiencies of 6%. Horizontal integration of multiple NWs demonstrates linear scaling of the absolute photocurrent with number of NWs, as well as retention of the high open-circuit voltages and short-circuit current densities measured for single NW devices. Notably, assembly of 2 NW elements into vertical stacks yields short-circuit current densities of 25 mA/cm(2) with a backside reflector, and simulations further show that such stacking represents an attractive approach for further enhancing performance with projected efficiencies of > 15% for 1.2 μm thick 5 NW stacks.

Series circuit of organic thin-film solar cells for conversion of water into hydrogen.

PubMed

Aoki, Atsushi; Naruse, Mitsuru; Abe, Takayuki

2013-07-22

A series circuit of bulk hetero-junction (BHJ) organic thin-film solar cells (OSCs) is investigated for electrolyzing water to gaseous hydrogen and oxygen. The BHJ OSCs applied consist of poly(3-hexylthiophene) as a donor and [6,6]-phenyl C61 butyric acid methyl ester as an acceptor. A series circuit of six such OSC units has an open circuit voltage (V(oc)) of 3.4 V, which is enough to electrolyze water. The short circuit current (J(sc)), fill factor (FF), and energy conversion efficiency (η) are independent of the number of unit cells. A maximum electric power of 8.86 mW cm(-2) is obtained at the voltage of 2.35 V. By combining a water electrolysis cell with the series circuit solar cells, the electrolyzing current and voltage obtained are 1.09 mA and 2.3 V under a simulated solar light irradiation (100 mW cm(-2), AM1.5G), and in one hour 0.65 mL hydrogen is generated. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A High Power Solid State Circuit Breaker for Military Hybrid Electric Vehicle Applications

DTIC Science & Technology

2012-08-01

the SSCB to isolate a fault, breaker opening is latched and can be reset to reclose the breaker via remote logic input. SSCB state and health...rated load current (125 A). Figure 10 shows that after the SSCB detects a fault and opens, it can also be repeatedly reclosed remotely to attempt to

Enhancement of Open-Circuit Voltage by Using the 58-π Silylmethyl Fullerenes in Small-Molecule Organic Solar Cells.

PubMed

Jeon, Il; Delacou, Clément; Nakagawa, Takafumi; Matsuo, Yutaka

2016-04-20

The application of 58-π-1,4-bis(silylmethyl)[60]fullerenes, C60 (CH2 SiMe2 Ph)(CH2 SiMe2 Ar) (Ar=Ph and 2-methoxylphenyl for SIMEF-1 and SIMEF-2, respectively), in small-molecule organic solar cells with a diketopyrrolopyrrole donor (3,6-bis[5-(benzofuran-2-yl)thiophen-2-yl]-2,5-bis(2-ethylhexyl)pyrrolo[3,4-c]pyrrole-1,4-dione (DPP(TBFu)2 )) is demonstrated. With the 58-π-silylmethyl fullerene acceptor, SIMEF-1, the devices showed the highest efficiency of 4.57 % with an average of 4.10 %. They manifested an improved open-circuit voltage (1.03 V) owing to the high-lying LUMO level of SIMEF-1, while maintaining a high short-circuit density (9.91 mA cm(-2) ) through controlling the crystallinity of DPP by thermal treatment. On the other hand, despite even higher open-circuit voltage (1.05 V), SIMEF-2-based devices showed lower performances of 3.53 %, owing to a low short-circuit current density (8.33 mA cm(-2) ) and fill factor (0.40) arising from the asymmetric structure, which results in a lower mobility and immiscibility. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

n-Type silicon photoelectrochemistry in methanol: Design of a 10.1% efficient semiconductor/liquid junction solar cell

PubMed Central

Gronet, Chris M.; Lewis, Nathan S.; Cogan, George; Gibbons, James

1983-01-01

n-Type Si electrodes in MeOH solvent with 0.2 M (1-hydroxyethyl)ferrocene, 0.5 mM (1-hydroxyethyl)ferricenium, and 1.0 M LiClO4 exhibit air mass 2 conversion efficiencies of 10.1% for optical energy into electricity. We observe open-circuit voltages of 0.53 V and short-circuit quantum efficiencies for electron flow of nearly unity. The fill factor of the cell does not decline significantly with increases in light intensity, indicating substantial reduction in efficiency losses in MeOH solvent compared to previous nonaqueous n-Si systems. Matte etch texturing of the Si surface decreases surface reflectivity and increases photocurrent by 50% compared to shiny, polished Si samples. The high values of the open-circuit voltage observed are consistent with the presence of a thin oxide layer, as in a Schottky metal-insulator-semiconductor device, which yields decreased surface recombination and increased values of open-circuit voltage and short-circuit current. The n-Si system was shown to provide sustained photocurrent at air mass 2 levels (20 mA/cm2) for charge through the interface of >2,000 C/cm2. The n-Si/MeOH system represents a liquid junction cell that has exceeded the 10% barrier for conversion of optical energy into electricity. PMID:16593280

Temperature effects on gallium arsenide 63Ni betavoltaic cell.

PubMed

Butera, S; Lioliou, G; Barnett, A M

2017-07-01

A GaAs 63 Ni radioisotope betavoltaic cell is reported over the temperature range 70°C to -20°C. The temperature effects on the key cell parameters were investigated. The saturation current decreased with decreased temperature; whilst the open circuit voltage, the short circuit current, the maximum power and the internal conversion efficiency values decreased with increased temperature. A maximum output power and an internal conversion efficiency of 1.8pW (corresponding to 0.3μW/Ci) and 7% were observed at -20°C, respectively. Copyright © 2017 The Authors. Published by Elsevier Ltd.. All rights reserved.

Superstructures and multijunction cells for high efficiency energy conversion

NASA Technical Reports Server (NTRS)

Wagner, M.; Leburton, J. P.

1985-01-01

Potential applications of superlattices to photovoltaic structures are discussed. A single-bandgap, multijunction cell with selective electrodes for lateral transport of collected carriers is proposed. The concept is based on similar doping superlattice (NIPI) structures. Computer simulations show that by reducing bulk recombination losses, the spectral response of such cells is enhanced, particularly for poor quality materials with short diffusion lengths. Dark current contributions of additional junctions result in a trade-off between short-circuit current and open-circuit voltage as the number of layers is increased. One or two extra junctions appear to be optimal.

Double buffer circuit for the characterization of piezoelectric nanogenerators based on ZnO nanowires

NASA Astrophysics Data System (ADS)

Nadaud, Kevin; Morini, François; Dahiya, Abhishek S.; Justeau, Camille; Boubenia, Sarah; Rajeev, Kiron P.; Alquier, Daniel; Poulin-Vittrant, Guylaine

2018-02-01

The accurate and precise measurements of voltage and current output generated by a nanogenerator (NG) are crucial to design the rectifying/harvesting circuit and to evaluate correctly the amount of energy provided by a NG. High internal impedance of the NGs (several MΩ) is the main limiting factor for designing circuits to measure the open circuit voltage. In this paper, we present the influence of the characterization circuit used to measure the generated voltage of piezoelectric NGs. The proposed circuit consists of a differential amplifier which permits us to measure the voltage provided by the NG without applying any parasitic bias to it. The proposed circuit is compared to a commercial electrometer and a homemade buffer circuit based on a voltage follower circuit to show its interest. For the proposed double buffer circuit, no asymmetric behavior has been noticed contrary to the measurements made using a simple buffer circuit and a Keithley electrometer. The proposed double buffer circuit is thus suitable to measure the NG voltage in a transparent way, as an ideal voltage probe should do.

Suppressing recombination in polymer photovoltaic devices via energy-level cascades.

PubMed

Tan, Zhi-Kuang; Johnson, Kerr; Vaynzof, Yana; Bakulin, Artem A; Chua, Lay-Lay; Ho, Peter K H; Friend, Richard H

2013-08-14

An energy cascading structure is designed in a polymer photovoltaic device to suppress recombination and improve quantum yields. By the insertion of a thin polymer interlayer with intermediate energy levels, electrons and holes can effectively shuttle away from each other while being spatially separated from recombination. An increase in open-circuit voltage and short-circuit current are observed in modified devices. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Investigation of DC hybrid circuit breaker based on high-speed switch and arc generator

NASA Astrophysics Data System (ADS)

Wu, Yifei; Rong, Mingzhe; Wu, Yi; Yang, Fei; Li, Mei; Zhong, Jianying; Han, Guohui; Niu, Chunping; Hu, Yang

2015-02-01

A new design of DC hybrid circuit breaker based on high-speed switch (HSS) and arc generator (AG), which can drastically profit from low heat loss in normal state and fast current breaking under fault state, is presented and analyzed in this paper. AG is designed according to the magnetic pinch effect of liquid metal. By utilizing the arc voltage generated across AG, the fault current is rapidly commutated from HSS into parallel connected branch. As a consequence, the arcless open of HSS is achieved. The post-arc conducting resume time (Δ tc) of AG and the commutation original voltage (Uc), two key factors in the commutation process, are investigated experimentally. Particularly, influences of the liquid metal channel diameter (Φ) of AG, fault current rate of rise (di/dt) and Uc on Δ tc are focused on. Furthermore, a suitable Uc is determined during the current commutation process, aiming at the reliable arcless open of HSS and short breaking time. Finally, the fault current breaking test is carried out for the current peak value of 11.8 kA, and the validity of the design is confirmed by the experimental results.

Investigation of DC hybrid circuit breaker based on high-speed switch and arc generator.

PubMed

Wu, Yifei; Rong, Mingzhe; Wu, Yi; Yang, Fei; Li, Mei; Zhong, Jianying; Han, Guohui; Niu, Chunping; Hu, Yang

2015-02-01

A new design of DC hybrid circuit breaker based on high-speed switch (HSS) and arc generator (AG), which can drastically profit from low heat loss in normal state and fast current breaking under fault state, is presented and analyzed in this paper. AG is designed according to the magnetic pinch effect of liquid metal. By utilizing the arc voltage generated across AG, the fault current is rapidly commutated from HSS into parallel connected branch. As a consequence, the arcless open of HSS is achieved. The post-arc conducting resume time (Δ tc) of AG and the commutation original voltage (Uc), two key factors in the commutation process, are investigated experimentally. Particularly, influences of the liquid metal channel diameter (Φ) of AG, fault current rate of rise (di/dt) and Uc on Δ tc are focused on. Furthermore, a suitable Uc is determined during the current commutation process, aiming at the reliable arcless open of HSS and short breaking time. Finally, the fault current breaking test is carried out for the current peak value of 11.8 kA, and the validity of the design is confirmed by the experimental results.

Rear surface effects in high efficiency silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wenham, S.R.; Robinson, S.J.; Dai, X.

1994-12-31

Rear surface effects in PERL solar cells can lead not only to degradation in the short circuit current and open circuit voltage, but also fill factor. Three mechanisms capable of changing the effective rear surface recombination velocity with injection level are identified, two associated with oxidized p-type surfaces, and the third with two dimensional effects associated with a rear floating junction. Each of these will degrade the fill factor if the range of junction biases corresponding to the rear surface transition, coincides with the maximum power point. Despite the identified non idealities, PERL cells with rear floating junctions (PERF cells)more » have achieved record open circuit voltages for silicon solar cells, while simultaneously achieving fill factor improvements relative to standard PERL solar cells. Without optimization, a record efficiency of 22% has been demonstrated for a cell with a rear floating junction. The results of both theoretical and experimental studies are provided.« less

Radiation damage in high voltage silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Brandhorst, H., Jr.; Swartz, C. K.; Weizer, V. G.

1980-01-01

Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE cell). The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

An open-source laser electronics suite

NASA Astrophysics Data System (ADS)

Pisenti, Neal C.; Reschovsky, Benjamin J.; Barker, Daniel S.; Restelli, Alessandro; Campbell, Gretchen K.

2016-05-01

We present an integrated set of open-source electronics for controlling external-cavity diode lasers and other instruments in the laboratory. The complete package includes a low-noise circuit for driving high-voltage piezoelectric actuators, an ultra-stable current controller based on the design of, and a high-performance, multi-channel temperature controller capable of driving thermo-electric coolers or resistive heaters. Each circuit (with the exception of the temperature controller) is designed to fit in a Eurocard rack equipped with a low-noise linear power supply capable of driving up to 5 A at +/- 15 V. A custom backplane allows signals to be shared between modules, and a digital communication bus makes the entire rack addressable by external control software over TCP/IP. The modular architecture makes it easy for additional circuits to be designed and integrated with existing electronics, providing a low-cost, customizable alternative to commercial systems without sacrificing performance.

Investigation of a temperature tolerant InGaP (GaInP) converter layer for a 63Ni betavoltaic cell

NASA Astrophysics Data System (ADS)

Butera, S.; Whitaker, M. D. C.; Krysa, A. B.; Barnett, A. M.

2017-08-01

A prototype InGaP p+-i-n+ mesa photodiode was studied for its potential as the energy conversion device in a 63Ni betavoltaic cell; its electrical performance was analysed across the temperature range  -20 °C to 100 °C. The results show that the InGaP detector when illuminated with a laboratory 63Ni radioisotope beta particle source had a maximum output power of 0.92 pW at  -20 °C, this value decreased at higher temperatures. A decrease in the open circuit voltage and in the cell internal conversion efficiency were also observed when the temperature was increased: at  -20 °C, the open circuit voltage and the cell internal conversion efficiency had values of 0.69 V and 4%, respectively. A short circuit current of 4.5 pA was measured at  -20 °C.

Graphene composite for improvement in the conversion efficiency of flexible poly 3-hexyl-thiophene:[6,6]-phenyl C{sub 71} butyric acid methyl ester polymer solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chauhan, A. K., E-mail: akchau@barc.gov.in, E-mail: akc.barc@gmail.com; Gusain, Abhay; Jha, P.

2014-03-31

The solution of thin graphene-sheets obtained from a simple ultrasonic exfoliation process was found to chemically interact with [6,6]-phenyl C{sub 71} butyric acid methyl ester (PCBM) molecules. The thinner graphene-sheets have significantly altered the positions of highest occupied molecular orbital and lowest unoccupied molecular orbital of PCBM, which is beneficial for the enhancement of the open circuit voltage of the solar cells. Flexible bulk heterojunction solar cells fabricated using poly 3-hexylthiophene (P3HT):PCBM-graphene exhibited a power conversion efficiency of 2.51%, which is a ∼2-fold increase as compared to those fabricated using P3HT:PCBM. Inclusion of graphene-sheets not only improved the open-circuit voltagemore » but also enhanced the short-circuit current density owing to an improved electron transport.« less

Manifestation of counteracting photovoltaic effect on IV characteristics in multi-junction solar cells

NASA Astrophysics Data System (ADS)

Mintairov, M. A.; Evstropov, V. V.; Mintairov, S. A.; Shvarts, M. Z.; Kozhukhovskaia, S. A.; Kalyuzhnyy, N. A.

2017-11-01

The existence within monolithic double- and triple-junction solar cells of a photoelectric source, which counteracts the basic photovoltaic p-n junctions, is proved. The paper presents a detailed analysis of the shape of the light IV-characteristics, as well as the dependence Voc-Jsc (open circuit voltage - short-circuit current). It is established that the counteracting source is tunnel p+-n+ junction. The photoelectric characteristics of samples with different tunnel diode peak current values were investigated, including the case of a zero value. When the tunnel p+-n+ junction is photoactive, the Voc-Jsc dependence has a dropping part, including a sharp jump. This undesirable effect decreases with increasing peak current.

Temperature dependence of an AlInP 63Ni betavoltaic cell

NASA Astrophysics Data System (ADS)

Butera, S.; Lioliou, G.; Krysa, A. B.; Barnett, A. M.

2016-10-01

In this paper, the performance of an Al0.52In0.48P 63Ni radioisotope cell is reported over the temperature range of -20 °C to 140 °C. A 400 μm diameter p+-i-n+ (2 μm i-layer) Al0.52In0.48P mesa photodiode was used as a conversion device in a novel betavoltaic cell. Dark current measurements on the Al0.52In0.48P detector showed that the saturation current increased increasing the temperature, while the ideality factor decreased. The effects of the temperature on the key cell parameters were studied in detail showing that the open circuit voltage, the maximum output power, and the internal conversion efficiency decreased when the temperature was increased. At -20 °C, an open circuit voltage and a maximum output power of 0.52 V and 0.28 pW, respectively, were measured.

Low-high junction theory applied to solar cells

NASA Technical Reports Server (NTRS)

Godlewski, M. P.; Baraona, C. R.; Brandhorst, H. W., Jr.

1974-01-01

Recent use of alloying techniques for rear contact formation has yielded a new kind of silicon solar cell, the back surface field (BSF) cell, with abnormally high open-circuit voltage and improved radiation resistance. Several analytical models for open-circuit voltage based on the reverse saturation current are formulated to explain these observations. The zero surface recombination velocity (SRV) case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the low-high junction and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells.

Coupled circuit numerical analysis of eddy currents in an open MRI system.

PubMed

Akram, Md Shahadat Hossain; Terada, Yasuhiko; Keiichiro, Ishi; Kose, Katsumi

2014-08-01

We performed a new coupled circuit numerical simulation of eddy currents in an open compact magnetic resonance imaging (MRI) system. Following the coupled circuit approach, the conducting structures were divided into subdomains along the length (or width) and the thickness, and by implementing coupled circuit concepts we have simulated transient responses of eddy currents for subdomains in different locations. We implemented the Eigen matrix technique to solve the network of coupled differential equations to speed up our simulation program. On the other hand, to compute the coupling relations between the biplanar gradient coil and any other conducting structure, we implemented the solid angle form of Ampere's law. We have also calculated the solid angle for three dimensions to compute inductive couplings in any subdomain of the conducting structures. Details of the temporal and spatial distribution of the eddy currents were then implemented in the secondary magnetic field calculation by the Biot-Savart law. In a desktop computer (Programming platform: Wolfram Mathematica 8.0®, Processor: Intel(R) Core(TM)2 Duo E7500 @ 2.93GHz; OS: Windows 7 Professional; Memory (RAM): 4.00GB), it took less than 3min to simulate the entire calculation of eddy currents and fields, and approximately 6min for X-gradient coil. The results are given in the time-space domain for both the direct and the cross-terms of the eddy current magnetic fields generated by the Z-gradient coil. We have also conducted free induction decay (FID) experiments of eddy fields using a nuclear magnetic resonance (NMR) probe to verify our simulation results. The simulation results were found to be in good agreement with the experimental results. In this study we have also conducted simulations for transient and spatial responses of secondary magnetic field induced by X-gradient coil. Our approach is fast and has much less computational complexity than the conventional electromagnetic numerical simulation methods. Copyright © 2014 Elsevier Inc. All rights reserved.

Study of enhanced photogalvanic effect of Naphthol Green B in natural sunlight

NASA Astrophysics Data System (ADS)

Koli, Pooran

2015-07-01

The photogalvanic cells based on Naphthol Green B sensitizer-Fructose reductant-Sodium Lauryl Sulphate surfactant has been studied in natural sunlight. The cell has been found workable in natural sunlight with greatly enhanced optimum cell performance. The 1159.2 μW power, 4500 μA short-circuit current, 1070 mV open-circuit potential, 14.49% efficiency and 240 min storage capacity (as half change time) has been observed in optimum cell fabrication conditions.

Catalysts for Lightweight Solar Fuels Generation

DTIC Science & Technology

2017-03-10

single bandgap solar cells to OER catalysts could lead to very high solar -to-fuel efficiencies. Figure 3 illustrates a PV -EC utilizing a PV , an...3- or 4 -single junction c-Si solar cells connected in series. Considering a PV -EC device based on commercially available single junction-Si solar ...30.8%) with open circuit voltage and short circuit current density ; total plot area is scaled to incident solar power (100 mW cm–2). The PV -EC

The role of high work-function metallic nanodots on the performance of a-Si:H solar cells: offering ohmic contact to light trapping.

PubMed

Kim, Jeehwan; Abou-Kandil, Ahmed; Fogel, Keith; Hovel, Harold; Sadana, Devendra K

2010-12-28

Addition of carbon into p-type "window" layers in hydrogenated amorphous silicon (a-Si:H) solar cells enhances short circuit currents and open circuit voltages by a great deal. However, a-Si:H solar cells with high carbon-doped "window" layers exhibit poor fill factors due to a Schottky barrier-like impedance at the interface between a-SiC:H windows and transparent conducting oxides (TCO), although they show maximized short circuit currents and open circuit voltages. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiC:H. Applying ultrathin high-work-function metals at the interface between the two materials results in an effective lowering of the work function mismatch and a consequent ohmic behavior. If the metal layer is sufficiently thin, then it forms nanodots rather than a continuous layer which provides light-scattering effect. We demonstrate 31% efficiency enhancement by using high-work-function materials for engineering the work function at the key interfaces to raise fill factors as well as photocurrents. The use of metallic interface layers in this work is a clear contrast to previous work where attempts were made to enhance the photocurrent using plasmonic metal nanodots on the solar cell surface.

Novel Spiral-Like Electrode Structure Design for Realization of Two Modes of Energy Harvesting.

PubMed

Chen, Lin; Guo, Hengyu; Xia, Xiaona; Liu, Guanlin; Shi, Haofei; Wang, Mingjun; Xi, Yi; Hu, Chenguo

2015-08-05

A planar spiral-like electrodes (PSE) based triboelectric generator has been designed for harvesting rotary mechanical energy to translate into electricity. The performance of the PSE-triboelectric generator with different cycles of spiral-like electrode strip at different rotating speeds is investigated, which demonstrates the open-circuit voltage and short-circuit current of 470 V and 9.0 μA at rotating speed of 500 r/min with three cycles. In addition, a novel coaxially integrated multilayered PSE-triboelectric generator is built, which can enhance the output of the power effectively. The short-circuit current, the open-circuit voltage, and output power reach to 41.55 μA, 500 V, and 11.73 mW, respectively, at rotating speed of 700 r/min. The output power of the multilayered PSE-triboelectric generator can drive 200 LEDs connected in antiparallel and charge a 110 μF commercial capacitor to 6 V in 23 s. Besides, due to the spiral-like electrode structure, the PSE-generator can work simultaneously in the modes of triboelectricity and electromagnetic induced electricity by sticking a small magnet on the rotating disk. The electromagnetic induced output power reaches to 21 μW at a loading resistance of 2 Ω at a rotating rate of 200 r/min. The spiral-like electrode structure not only broadens the electrode structure design but also adds a new function to the electrode.

A comprehensive equivalent circuit model of all-vanadium redox flow battery for power system analysis

NASA Astrophysics Data System (ADS)

Zhang, Yu; Zhao, Jiyun; Wang, Peng; Skyllas-Kazacos, Maria; Xiong, Binyu; Badrinarayanan, Rajagopalan

2015-09-01

Electrical equivalent circuit models demonstrate excellent adaptability and simplicity in predicting the electrical dynamic response of the all-vanadium redox flow battery (VRB) system. However, only a few publications that focus on this topic are available. The paper presents a comprehensive equivalent circuit model of VRB for system level analysis. The least square method is used to identify both steady-state and dynamic characteristics of VRB. The inherent features of the flow battery such as shunt current, ion diffusion and pumping energy consumption are also considered. The proposed model consists of an open-circuit voltage source, two parasitic shunt bypass circuits, a 1st order resistor-capacitor network and a hydraulic circuit model. Validated with experimental data, the proposed model demonstrates excellent accuracy. The mean-error of terminal voltage and pump consumption are 0.09 V and 0.49 W respectively. Based on the proposed model, self-discharge and system efficiency are studied. An optimal flow rate which maximizes the system efficiency is identified. Finally, the dynamic responses of the proposed VRB model under step current profiles are presented. Variables such as SOC and stack terminal voltage can be provided.

Modeling recombination processes and predicting energy conversion efficiency of dye sensitized solar cells from first principles

NASA Astrophysics Data System (ADS)

Ma, Wei; Meng, Sheng

2014-03-01

We present a set of algorithms based on solo first principles calculations, to accurately calculate key properties of a DSC device including sunlight harvest, electron injection, electron-hole recombination, and open circuit voltages. Two series of D- π-A dyes are adopted as sample dyes. The short circuit current can be predicted by calculating the dyes' photo absorption, and the electron injection and recombination lifetime using real-time time-dependent density functional theory (TDDFT) simulations. Open circuit voltage can be reproduced by calculating energy difference between the quasi-Fermi level of electrons in the semiconductor and the electrolyte redox potential, considering the influence of electron recombination. Based on timescales obtained from real time TDDFT dynamics for excited states, the estimated power conversion efficiency of DSC fits nicely with the experiment, with deviation below 1-2%. Light harvesting efficiency, incident photon-to-electron conversion efficiency and the current-voltage characteristics can also be well reproduced. The predicted efficiency can serve as either an ideal limit for optimizing photovoltaic performance of a given dye, or a virtual device that closely mimicking the performance of a real device under different experimental settings.

Charging system and method for multicell storage batteries

DOEpatents

Cox, Jay A.

1978-01-01

A battery-charging system includes a first charging circuit connected in series with a plurality of battery cells for controlled current charging. A second charging circuit applies a controlled voltage across each individual cell for equalization of the cells to the fully charged condition. This controlled voltage is determined at a level above the fully charged open-circuit voltage but at a sufficiently low level to prevent corrosion of cell components by electrochemical reaction. In this second circuit for cell equalization, a transformer primary receives closely regulated, square-wave voltage which is coupled to a plurality of equal secondary coil windings. Each secondary winding is connected in parallel to each cell of a series-connected pair of cells through half-wave rectifiers and a shared, intermediate conductor.

Low-Voltage Bypass Device

NASA Technical Reports Server (NTRS)

Wilson, J. P.

1994-01-01

Improved bypass device provides low-resistance current shunt around low-voltage power cell when cell fails in open-circuit condition during operation. In comparison with older bypass devices for same application, this one weighs less, generates less heat, and has lower voltage drop (less resistance). Bypass device connected in parallel with power cell. Draws very little current during normal operation of cell.

Efficient photovoltaic heterojunctions of indium tin oxides on silicon

NASA Technical Reports Server (NTRS)

Dubow, J. B.; Sites, J. R.; Burk, D. E.

1976-01-01

Heterojunction diodes of indium tin oxide films sputtered on to p-silicon using ion-beam techniques display significant photovoltaic effects when exposed to sunlight. Galvanomagnetic and optical measurements confirm that the oxide films are highly degenerate transparent semiconductors. At a tin oxide concentration of 10%, an open-circuit voltage of 0.51 V was observed along with a short-circuit current of 32 mA/sq cm, a fill factor of 0.70, and a conversion efficiency of 12%. As the concentration was raised to 70%, the voltage remained steady, the current fell to 27 mA/sq cm, and the fill factor fell to 0.60

Segmented wind energy harvester based on contact-electrification and as a self-powered flow rate sensor

NASA Astrophysics Data System (ADS)

Su, Yuanjie; Xie, Guangzhong; Xie, Fabiao; Xie, Tao; Zhang, Qiuping; Zhang, Hulin; Du, Hongfei; Du, Xiaosong; Jiang, Yadong

2016-06-01

A single-electrode-based segmented triboelectric nanogenerator (S-TENG) was developed. By utilizing the wind-induced vibration of a fluorinated ethylene propylene (FEP) film between two copper electrodes, the S-TENG delivers an open-circuit voltage up to 36 V and a short-circuit current of 11.8 μA, which can simultaneously light up 20 LEDs and charge capacitors. Moreover, the S-TENG holds linearity between output current and flow rate, revealing its feasibility as a self-powered wind speed sensor. This work demonstrates potential applications of S-TENG in wind energy harvester, self-powered gas sensor, high altitude air navigation.

Superconducting shielded core reactor with reduced AC losses

DOEpatents

Cha, Yung S.; Hull, John R.

2006-04-04

A superconducting shielded core reactor (SSCR) operates as a passive device for limiting excessive AC current in a circuit operating at a high power level under a fault condition such as shorting. The SSCR includes a ferromagnetic core which may be either closed or open (with an air gap) and extends into and through a superconducting tube or superconducting rings arranged in a stacked array. First and second series connected copper coils each disposed about a portion of the iron core are connected to the circuit to be protected and are respectively wound inside and outside of the superconducting tube or rings. A large impedance is inserted into the circuit by the core when the shielding capability of the superconducting arrangement is exceeded by the applied magnetic field generated by the two coils under a fault condition to limit the AC current in the circuit. The proposed SSCR also affords reduced AC loss compared to conventional SSCRs under continuous normal operation.

Conductive surge testing of circuits and systems

NASA Technical Reports Server (NTRS)

Richman, P.

1980-01-01

Techniques are given for conductive surge testing of powered electronic equipment. The correct definitions of common and normal mode are presented. Testing requires not only spike-surge generators with a suitable range of open-circuit voltage and short-circuit current waveshapes, but also appropriate means, termed couplers, for connecting test surges to the equipment under test. Key among coupler design considerations is minimization of fail positives resulting from reduction in delivered surge energy due to the coupler. Back-filters and the lines on which they are necessary, are considered as well as ground-fault and ground potential rise. A method for monitoring delivered and resulting surge waves is mentioned.

Studies of silicon pn junction solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.; Neugroschel, A.

1977-01-01

Modifications of the basic Shockley equations that result from the random and nonrandom spatial variations of the chemical composition of a semiconductor were developed. These modifications underlie the existence of the extensive emitter recombination current that limits the voltage over the open circuit of solar cells. The measurement of parameters, series resistance and the base diffusion length is discussed. Two methods are presented for establishing the energy bandgap narrowing in the heavily-doped emitter region. Corrections that can be important in the application of one of these methods to small test cells are examined. Oxide-charge-induced high-low-junction emitter (OCI-HLE) test cells which exhibit considerably higher voltage over the open circuit than was previously seen in n-on-p solar cells are described.

Capacitive charge generation apparatus and method for testing circuits

DOEpatents

Cole, E.I. Jr.; Peterson, K.A.; Barton, D.L.

1998-07-14

An electron beam apparatus and method for testing a circuit are disclosed. The electron beam apparatus comprises an electron beam incident on an outer surface of an insulating layer overlying one or more electrical conductors of the circuit for generating a time varying or alternating current electrical potential on the surface; and a measurement unit connected to the circuit for measuring an electrical signal capacitively coupled to the electrical conductors to identify and map a conduction state of each of the electrical conductors, with or without an electrical bias signal being applied to the circuit. The electron beam apparatus can further include a secondary electron detector for forming a secondary electron image for registration with a map of the conduction state of the electrical conductors. The apparatus and method are useful for failure analysis or qualification testing to determine the presence of any open-circuits or short-circuits, and to verify the continuity or integrity of electrical conductors buried below an insulating layer thickness of 1-100 {micro}m or more without damaging or breaking down the insulating layer. The types of electrical circuits that can be tested include integrated circuits, multi-chip modules, printed circuit boards and flexible printed circuits. 7 figs.

Capacitive charge generation apparatus and method for testing circuits

DOEpatents

Cole, Jr., Edward I.; Peterson, Kenneth A.; Barton, Daniel L.

1998-01-01

An electron beam apparatus and method for testing a circuit. The electron beam apparatus comprises an electron beam incident on an outer surface of an insulating layer overlying one or more electrical conductors of the circuit for generating a time varying or alternating current electrical potential on the surface; and a measurement unit connected to the circuit for measuring an electrical signal capacitively coupled to the electrical conductors to identify and map a conduction state of each of the electrical conductors, with or without an electrical bias signal being applied to the circuit. The electron beam apparatus can further include a secondary electron detector for forming a secondary electron image for registration with a map of the conduction state of the electrical conductors. The apparatus and method are useful for failure analysis or qualification testing to determine the presence of any open-circuits or short-circuits, and to verify the continuity or integrity of electrical conductors buried below an insulating layer thickness of 1-100 .mu.m or more without damaging or breaking down the insulating layer. The types of electrical circuits that can be tested include integrated circuits, multi-chip modules, printed circuit boards and flexible printed circuits.

Base drive for paralleled inverter systems

NASA Technical Reports Server (NTRS)

Nagano, S. (Inventor)

1980-01-01

In a paralleled inverter system, a positive feedback current derived from the total current from all of the modules of the inverter system is applied to the base drive of each of the power transistors of all modules, thereby to provide all modules protection against open or short circuit faults occurring in any of the modules, and force equal current sharing among the modules during turn on of the power transistors.

Field trial of rural solar photovoltaic system

NASA Astrophysics Data System (ADS)

Basu, P.; Mukhopadhyay, K.; Banerjee, T.; Das, S.; Saha, H.

Experience, costs, and performance of photovoltaic (PV) systems set up in a remote Indian village to power an adult literacy center and an irrigation pump are described. The center was furnished with a 14-module, 200 W array to power a television and three fluorescent lamps. The pumping installation has 20 modules for a 300 W output directly coupled to a 300-W dc pump motor. Data were gathered on the open circuit voltage, short circuit current, specific gravity of the battery fluid, degradation of the cells, nominal operating temperature of the cells, load currents, Amp-hours, water flow rate (pump), and the static head and draw down rate (pump). Monitoring of the array performances in the dusty environment showed that once/week cleaning is necessary. Al-substrates cracked at the center installation and sealant evaporation caused condensation which degraded the light transmissivity and thereby the short-circuit current of the modules. The combination of low-efficiency (5 pct) cells and cheap labor demonstrated economic operation without high-efficiency cells.

Restrike Particle Beam Experiments on a Dense Plasma Focus.

DTIC Science & Technology

1981-11-30

particle beams generated in a plasma focus with the current flowing in the circuit just before the radial collapse of the pinch, IMB. The results show...the implications for the application of the plasma focus as an opening switch are discussed. (Author)

Design of an improved RCD buffer circuit for full bridge circuit

NASA Astrophysics Data System (ADS)

Yang, Wenyan; Wei, Xueye; Du, Yongbo; Hu, Liang; Zhang, Liwei; Zhang, Ou

2017-05-01

In the full bridge inverter circuit, when the switch tube suddenly opened or closed, the inductor current changes rapidly. Due to the existence of parasitic inductance of the main circuit. Therefore, the surge voltage between drain and source of the switch tube can be generated, which will have an impact on the switch and the output voltage. In order to ab sorb the surge voltage. An improve RCD buffer circuit is proposed in the paper. The peak energy will be absorbed through the buffer capacitor of the circuit. The part energy feedback to the power supply, another part release through the resistor in the form of heat, and the circuit can absorb the voltage spikes. This paper analyzes the process of the improved RCD snubber circuit, According to the specific parameters of the main circuit, a reasonable formula for calculating the resistance capacitance is given. A simulation model will be modulated in Multisim, which compared the waveform of tube voltage and the output waveform of the circuit without snubber circuit with the improved RCD snubber circuit. By comparing and analyzing, it is proved that the improved buffer circuit can absorb surge voltage. Finally, experiments are demonstrated to validate that the correctness of the RC formula and the improved RCD snubber circuit.

Solution-Processed Ag Nanowires + PEDOT:PSS Hybrid Electrode for Cu(In,Ga)Se₂ Thin-Film Solar Cells.

PubMed

Shin, Donghyeop; Kim, Taegeon; Ahn, Byung Tae; Han, Seung Min

2015-06-24

To reduce the cost of the Cu(In,Ga)Se2 (CIGS) solar cells while maximizing the efficiency, we report the use of an Ag nanowires (NWs) + poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PSS) hybrid transparent electrode, which was deposited using all-solution-processed, low-cost, scalable methods. This is the first demonstration of an Ag NWs + PSS transparent electrode applied to CIGS solar cells. The spin-coated 10-nm-thick PSS conducting polymer layer in our hybrid electrode functioned as a filler of empty space of an electrostatically sprayed Ag NW network. Coating of PSS on the Ag NW network resulted in an increase in the short-circuit current from 15.4 to 26.5 mA/cm(2), but the open-circuit voltage and shunt resistance still needed to be improved. The limited open-circuit voltage was found to be due to interfacial recombination that is due to the ineffective hole-blocking ability of the CdS film. To suppress the interfacial recombination between Ag NWs and the CdS film, a Zn(S,O,OH) film was introduced as a hole-blocking layer between the CdS film and Ag NW network. The open-circuit voltage of the cell sharply improved from 0.35 to 0.6 V, which resulted in the best cell efficiency of 11.6%.

42 CFR 84.97 - Test for carbon dioxide in inspired gas; open- and closed-circuit apparatus; maximum allowable...

Code of Federal Regulations, 2010 CFR

2010-10-01

... closed-circuit apparatus; maximum allowable limits. 84.97 Section 84.97 Public Health PUBLIC HEALTH... ACTIVITIES APPROVAL OF RESPIRATORY PROTECTIVE DEVICES Self-Contained Breathing Apparatus § 84.97 Test for carbon dioxide in inspired gas; open- and closed-circuit apparatus; maximum allowable limits. (a) Open...

42 CFR 84.97 - Test for carbon dioxide in inspired gas; open- and closed-circuit apparatus; maximum allowable...

Code of Federal Regulations, 2011 CFR

2011-10-01

... closed-circuit apparatus; maximum allowable limits. 84.97 Section 84.97 Public Health PUBLIC HEALTH... ACTIVITIES APPROVAL OF RESPIRATORY PROTECTIVE DEVICES Self-Contained Breathing Apparatus § 84.97 Test for carbon dioxide in inspired gas; open- and closed-circuit apparatus; maximum allowable limits. (a) Open...

Extra high speed modified Lundell alternator parameters and open/short-circuit characteristics from global 3D-FE magnetic field solutions

NASA Astrophysics Data System (ADS)

Wang, R.; Demerdash, N. A.

1992-06-01

The combined magnetic vector potential - magnetic scalar potential method of computation of 3D magnetic fields by finite elements, introduced in a companion paper, is used for global 3D field analysis and machine performance computations under open-circuit and short-circuit conditions for an example 14.3 kVA modified Lundell alternator, whose magnetic field is of intrinsic 3D nature. The computed voltages and currents under these machine test conditions were verified and found to be in very good agreement with corresponding test data. Results of use of this modelling and computation method in the study of a design alteration example, in which the stator stack length of the example alternator is stretched in order to increase voltage and volt-ampere rating, are given here. These results demonstrate the inadequacy of conventional 2D-based design concepts and the imperative of use of this type of 3D magnetic field modelling in the design and investigation of such machines.

Novel Rear Side Metallization Route for Si Solar Cells Using a Transparent Conducting Adhesive: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schnabel, Manuel; Klein, Talysa; Lee, Benjamin G

The rear side metallization of Si solar cells comes with a number of inherent losses and trade-offs: a larger metallized area fraction improves fill factor at the expense of open-circuit voltage, depositing directly on textured Si leads to low contact resistivity at the expense of short-circuit current, and some metallization processes create defects in Si. To mitigate many of these losses we have developed a novel approach for rear side metallization of Si solar cells, utilizing a transparent conducting adhesive (TCA) to metallize Si without exposing the wafer to the metal deposition process. The TCA consists of an insulating adhesivemore » loaded with conductive microspheres. This approach leads to virtually no loss in implied open-circuit voltage upon metallization. Electrical measurements showed that contact resistivities of 3-9 ..omega.. cm2 were achieved, and an analysis of the transit resistance per microsphere showed that less than 1 ..omega.. cm2 should be achievable with higher microsphere loading of the TCA.« less

Process Research On Polycrystalline Silicon Material (PROPSM). [flat plate solar array project

NASA Technical Reports Server (NTRS)

Culik, J. S.

1983-01-01

The performance-limiting mechanisms in large-grain (greater than 1 to 2 mm in diameter) polycrystalline silicon solar cells were investigated by fabricating a matrix of 4 sq cm solar cells of various thickness from 10 cm x 10 cm polycrystalline silicon wafers of several bulk resistivities. Analysis of the illuminated I-V characteristics of these cells suggests that bulk recombination is the dominant factor limiting the short-circuit current. The average open-circuit voltage of the polycrystalline solar cells is 30 to 70 mV lower than that of co-processed single-crystal cells; the fill-factor is comparable. Both open-circuit voltage and fill-factor of the polycrystalline cells have substantial scatter that is not related to either thickness or resistivity. This implies that these characteristics are sensitive to an additional mechanism that is probably spatial in nature. A damage-gettering heat-treatment improved the minority-carrier diffusion length in low lifetime polycrystalline silicon, however, extended high temperature heat-treatment degraded the lifetime.

Extra high speed modified Lundell alternator parameters and open/short-circuit characteristics from global 3D-FE magnetic field solutions

NASA Technical Reports Server (NTRS)

Wang, R.; Demerdash, N. A.

1992-01-01

The combined magnetic vector potential - magnetic scalar potential method of computation of 3D magnetic fields by finite elements, introduced in a companion paper, is used for global 3D field analysis and machine performance computations under open-circuit and short-circuit conditions for an example 14.3 kVA modified Lundell alternator, whose magnetic field is of intrinsic 3D nature. The computed voltages and currents under these machine test conditions were verified and found to be in very good agreement with corresponding test data. Results of use of this modelling and computation method in the study of a design alteration example, in which the stator stack length of the example alternator is stretched in order to increase voltage and volt-ampere rating, are given here. These results demonstrate the inadequacy of conventional 2D-based design concepts and the imperative of use of this type of 3D magnetic field modelling in the design and investigation of such machines.

Surface and allied studies in silicon solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.

1984-01-01

Measuring small-signal admittance versus frequency and forward bias voltage together with a new transient measurement apparently provides the most reliable and flexible method available for determining back surface recombination velocity and low-injection lifetime of the quasineutral base region of silicon solar cells. The new transient measurement reported here is called short-circuit-current decay (SCCD). In this method, forward voltage equal to about the open-circuit or the maximum power voltage establishes excess holes and electrons in the junction transition region and in the quasineutral regions. The sudden application of a short circuit causes an exiting of the excess holes and electrons in the transition region within about ten picoseconds. From observing the slope and intercept of the subsequent current decay, the base lifetime and surface recombination velocity can be determined. The admittance measurement previously mentioned then enters to increase accuracy particularly for devices for which the diffusion length exceeds the base thickness.

Guiding electrical current in nanotube circuits using structural defects: a step forward in nanoelectronics.

PubMed

Romo-Herrera, Jose M; Terrones, Mauricio; Terrones, Humberto; Meunier, Vincent

2008-12-23

Electrical current could be efficiently guided in 2D nanotube networks by introducing specific topological defects within the periodic framework. Using semiempirical transport calculations coupled with Landauer-Buttiker formalism of quantum transport in multiterminal nanoscale systems, we provide a detailed analysis of the processes governing the atomic-scale design of nanotube circuits. We found that when defects are introduced as patches in specific sites, they act as bouncing centers that reinject electrons along specific paths, via a wave reflection process. This type of defects can be incorporated while preserving the 3-fold connectivity of each carbon atom embedded within the graphitic lattice. Our findings open up a new way to explore bottom-up design, at the nanometer scale, of complex nanotube circuits which could be extended to 3D nanosystems and applied in the fabrication of nanoelectronic devices.

Graphene Ink Laminate Structures on Poly(vinylidene difluoride) (PVDF) for Pyroelectric Thermal Energy Harvesting and Waste Heat Recovery.

PubMed

Zabek, Daniel; Seunarine, Kris; Spacie, Chris; Bowen, Chris

2017-03-15

Thermal energy can be effectively converted into electricity using pyroelectrics, which act as small scale power generator and energy harvesters providing nanowatts to milliwatts of electrical power. In this paper, a novel pyroelectric harvester based on free-standing poly(vinylidene difluoride) (PVDF) was manufactured that exploits the high thermal radiation absorbance of a screen printed graphene ink electrode structure to facilitate the conversion of the available thermal radiation energy into electrical energy. The use of interconnected graphene nanoplatelets (GNPs) as an electrode enable high thermal radiation absorbance and high electrical conductivity along with the ease of deposition using a screen print technique. For the asymmetric structure, the pyroelectric open-circuit voltage and closed-circuit current were measured, and the harvested electrical energy was stored in an external capacitor. For the graphene ink/PVDF/aluminum system the closed circuit pyroelectric current improves by 7.5 times, the open circuit voltage by 3.4 times, and the harvested energy by 25 times compared to a standard aluminum/PVDF/aluminum system electrode design, with a peak energy density of 1.13 μJ/cm 3 . For the pyroelectric device employed in this work, a complete manufacturing process and device characterization of these structures are reported along with the thermal conductivity of the graphene ink. The material combination presented here provides a new approach for delivering smart materials and structures, wireless technologies, and Internet of Things (IoT) devices.

Flexible one-structure arched triboelectric nanogenerator based on common electrode for high efficiency energy harvesting and self-powered motion sensing

NASA Astrophysics Data System (ADS)

Chen, Xi; He, Jian; Song, Linlin; Zhang, Zengxing; Tian, Zhumei; Wen, Tao; Zhai, Cong; Chen, Yi; Cho, Jundong; Chou, Xiujian; Xue, Chenyang

2018-04-01

Triboelectric nanogenerators are widely used because of low cost, simple manufacturing process and high output performance. In this work, a flexible one-structure arched triboelectric nanogenerator (FOAT), based on common electrode to combine the single-electrode mode and contact-separation, was designed using silicone rubber, epoxy resin and flexible electrode. The peak-to-peak short circuit current of 18μ A and the peak-to-peak open circuit voltage of 570V can be obtained from the FOAT with the size of 5×7 cm2 under the frequency of 3Hz and the pressure of 300N. The peak-to-peak short circuit current of FOAT is increased by 29% and 80%, and the peak-to-peak open circuit voltage is increased by 33% and 54% compared with single-electrode mode and contact-separation mode, respectively. FOAT realizes the combination of two generation modes, which improves the output performance of triboelectric nanogenerator (TENG). 62 light-emitting-diodes (LEDs) can be completely lit up and 2.2μ F capacitor can be easily charged to 1.2V in 9s. When the FOAT is placed at different parts of the human body, the human motion energy can be harvested and be the sensing signal for motion monitoring sensor. Based on the above characteristics, FOAT exhibits great potential in illumination, power supplies for wearable electronic devices and self-powered motion monitoring sensor via harvesting the energy of human motion.

Light intensity dependence of open-circuit voltage and short-circuit current of polymer/fullerene solar cells

NASA Astrophysics Data System (ADS)

Koster, L. Jan A.; Mihailetchi, Valentin D.; Ramaker, Robert; Xie, Hangxing; Blom, Paul W. M.

2006-04-01

The open-circuit voltage (Voc) of polymer/fullerene bulk heterojunction solar cells is investigated as a function of light intensity for different temperatures. The observed photogenerated current and V oc are at variance with classical p-n junctionbased models. The influence of light intensity and recombination strength on V oc is consistently explained by a model based on the notion that the quasi-Fermi levels are constant throughout the device, including both drift and diffusion of charge carriers. The light intensity dependence of the short-circuit current density (J sc) is also addressed. A typical feature of polymer/fullerene based solar cells is that Jsc does not scale exactly linearly with light intensity (I). Instead, a power law relationship is found given by Jsc~ Iα, where α ranges from 0.9 to 1. In a number of reports this deviation from unity is attributed to the occurrence of bimolecular recombination. We demonstrate that the dependence of the photocurrent in bulk heterojunction solar cells is governed by the build-up of space charge in the device. The occurrence of space-charge stems from the difference in charge carrier mobility of electrons and holes. In blends of poly(3-hexylthiophene) and 6,6- phenyl C61-butyric acid methyl ester this mobility difference can be tuned in between one and three orders of magnitude, depending on the annealing conditions. This allows us to experimentally verify the relation between space charge build-up and intensity dependence of Jsc. Model calculations confirm that bimolecular recombination leads only to a typical loss of 1% of all free charge carriers at Jsc for these devices. Therefore, bimolecular recombination plays only a minor role as compared to the effect of space charge in the intensity dependence of J sc.

Doped hole transport layer for efficiency enhancement in planar heterojunction organolead trihalide perovskite solar cells

DOE PAGES

Wang, Qi; Bi, Cheng; Huang, Jinsong

2015-05-06

We demonstrated the efficiency of a solution-processed planar heterojunction organometallic trihalide perovskite solar cell can be increased to 17.5% through doping the hole transporting layer for reducing the resistivity. Doped Poly(triaryl amine) (PTAA) by 2,3,5,6-Tetrafluoro-7,7,8,8-Tetracyanoquinodimethane (F4-TCNQ) reduced device series resistance by three-folds, increasing the device fill factor to 74%, open circuit voltage to 1.09 V without sacrificing the short circuit current. As a result, this study reveals that the high resistivity of currently broadly applied polymer hole transport layer limits the device efficiency, and points a new direction to improve the device efficiency.

Silicon nanowire array architecture for heterojunction electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solovan, M. M., E-mail: m.solovan@chnu.edu.ua; Brus, V. V.; Mostovyi, A. I.

2017-04-15

Photosensitive nanostructured heterojunctions n-TiN/p-Si were fabricated by means of titanium nitride thin films deposition (n-type conductivity) by the DC reactive magnetron sputtering onto nano structured single crystal substrates of p-type Si (100). The temperature dependencies of the height of the potential barrier and series resistance of the n-TiN/p-Si heterojunctions were investigated. The dominant current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage V{sub oc} = 0.8 V, short-circuit current I{sub sc} = 3.72 mA/cm{sup 2} and fill factor FF = 0.5 under illumination of 100 mW/cm{sup 2}.

Investigation of reliability attributes and accelerated stress factors on terrestrial solar cells

NASA Technical Reports Server (NTRS)

Prince, J. L.; Lathrop, J. W.

1979-01-01

The results of accelerated stress testing of four different types of silicon terrestrial solar cells are discussed. The accelerated stress tests used included bias-temperature tests, bias-temperature-humidity tests, thermal cycle and thermal shock tests, and power cycle tests. Characterization of the cells was performed before stress testing and at periodic down-times, using electrical measurement, visual inspection, and metal adherence pull tests. Electrical parameters measured included short-circuit current, open circuit voltage, and output power, voltage, and current at the maximum power point. Incorporated in the report are the distributions of the prestress electrical data for all cell types. Data were also obtained on cell series and shunt resistance.

Operating manual: Fast response solar array simulator

NASA Technical Reports Server (NTRS)

Vonhatten, R.; Weimer, A.; Zerbel, D. W.

1971-01-01

The fast response solar array simulator (FRSAS) is a universal solar array simulator which features an AC response identical to that of a real array over a large range of DC operating points. In addition, short circuit current (I sub sc) and open circuit voltage (V sub oc) are digitally programmable over a wide range for use not only in simulating a wide range of array sizes, but also to simulate (I sub sc) and (V sub oc) variations with illumination and temperature. A means for simulation of current variations due to spinning is available. Provisions for remote control and monitoring, automatic failure sensing and warning, and a load simulator are also included.

A comparison of lightning and nuclear electromagnetic pulse response of a helicopter

NASA Technical Reports Server (NTRS)

Easterbrook, C. C.; Perala, R. A.

1984-01-01

A numerical modeling technique is utilized to investigate the response of a UH-60A helicopter to both lightning and nuclear electromagnetic pulses (NEMP). The analytical approach involves the three-dimensional time domain finite-difference solutions of Maxwell's equations. Both the external currents and charges as well as the internal electromagnetic fields and cable responses are computed. Results of the analysis indicate that, in general, the short circuit current on internal cables is larger for lightning, whereas the open-circuit voltages are slightly higher for NEMP. The lightning response is highly dependent upon the rise time of the injected current as was expected. The analysis shows that a coupling levels to cables in a helicopter are 20 to 30 dB larger than those observed in fixed-wing aircraft.

42 CFR 84.95 - Service time test; open-circuit apparatus.

Code of Federal Regulations, 2013 CFR

2013-10-01

... classified according to the length of time it supplies air or oxygen to the breathing machine. (c) The... 42 Public Health 1 2013-10-01 2013-10-01 false Service time test; open-circuit apparatus. 84.95...-Contained Breathing Apparatus § 84.95 Service time test; open-circuit apparatus. (a) Service time will be...

42 CFR 84.95 - Service time test; open-circuit apparatus.

Code of Federal Regulations, 2012 CFR

2012-10-01

... classified according to the length of time it supplies air or oxygen to the breathing machine. (c) The... 42 Public Health 1 2012-10-01 2012-10-01 false Service time test; open-circuit apparatus. 84.95...-Contained Breathing Apparatus § 84.95 Service time test; open-circuit apparatus. (a) Service time will be...

42 CFR 84.95 - Service time test; open-circuit apparatus.

Code of Federal Regulations, 2014 CFR

2014-10-01

... classified according to the length of time it supplies air or oxygen to the breathing machine. (c) The... 42 Public Health 1 2014-10-01 2014-10-01 false Service time test; open-circuit apparatus. 84.95...-Contained Breathing Apparatus § 84.95 Service time test; open-circuit apparatus. (a) Service time will be...

Simple two-electrode biosignal amplifier.

PubMed

Dobrev, D; Neycheva, T; Mudrov, N

2005-11-01

A simple, cost effective circuit for a two-electrode non-differential biopotential amplifier is proposed. It uses a 'virtual ground' transimpedance amplifier and a parallel RC network for input common mode current equalisation, while the signal input impedance preserves its high value. With this innovative interface circuit, a simple non-inverting amplifier fully emulates high CMRR differential. The amplifier equivalent CMRR (typical range from 70-100 dB) is equal to the open loop gain of the operational amplifier used in the transimpedance interface stage. The circuit has very simple structure and utilises a small number of popular components. The amplifier is intended for use in various two-electrode applications, such as Holter-type monitors, defibrillators, ECG monitors, biotelemetry devices etc.

Gas electron multiplier (GEM) foil test, repair and effective gain calculation

NASA Astrophysics Data System (ADS)

Tahir, Muhammad; Zubair, Muhammad; Khan, Tufail A.; Khan, Ashfaq; Malook, Asad

2018-06-01

The focus of my research is based on the gas electron multiplier (GEM) foil test, repairing and effective gain calculation of GEM detector. During my research work define procedure of GEM foil testing short-circuit, detection short-circuits in the foil. Study different ways to remove the short circuits in the foils. Set and define the GEM foil testing procedures in the open air, and with nitrogen gas. Measure the leakage current of the foil and applying different voltages with specified step size. Define the Quality Control (QC) tests and different components of GEM detectors before assembly. Calculate the effective gain of GEM detectors using 109Cd and 55Fe radioactive source.

Characterization of bacterial and archaeal communities in air-cathode microbial fuel cells, open circuit and sealed-off reactors.

PubMed

Shehab, Noura; Li, Dong; Amy, Gary L; Logan, Bruce E; Saikaly, Pascal E

2013-11-01

A large percentage of organic fuel consumed in a microbial fuel cell (MFC) is lost as a result of oxygen transfer through the cathode. In order to understand how this oxygen transfer affects the microbial community structure, reactors were operated in duplicate using three configurations: closed circuit (CC; with current generation), open circuit (OC; no current generation), and sealed off cathodes (SO; no current, with a solid plate placed across the cathode). Most (98 %) of the chemical oxygen demand (COD) was removed during power production in the CC reactor (maximum of 640 ± 10 mW/m(2)), with a low percent of substrate converted to current (coulombic efficiency of 26.5 ± 2.1 %). Sealing the cathode reduced COD removal to 7 %, but with an open cathode, there was nearly as much COD removal by the OC reactor (94.5 %) as the CC reactor. Oxygen transfer into the reactor substantially affected the composition of the microbial communities. Based on analysis of the biofilms using 16S rRNA gene pyrosequencing, microbes most similar to Geobacter were predominant on the anodes in the CC MFC (72 % of sequences), but the most abundant bacteria were Azoarcus (42 to 47 %) in the OC reactor, and Dechloromonas (17 %) in the SO reactor. Hydrogenotrophic methanogens were most predominant, with sequences most similar to Methanobacterium in the CC and SO reactor, and Methanocorpusculum in the OC reactors. These results show that oxygen leakage through the cathode substantially alters the bacterial anode communities, and that hydrogenotrophic methanogens predominate despite high concentrations of acetate. The predominant methanogens in the CC reactor most closely resembled those in the SO reactor, demonstrating that oxygen leakage alters methanogenic as well as general bacterial communities.

Thermally oxidized titania nanotubes enhance the corrosion resistance of Ti6Al4V.

PubMed

Grotberg, John; Hamlekhan, Azhang; Butt, Arman; Patel, Sweetu; Royhman, Dmitry; Shokuhfar, Tolou; Sukotjo, Cortino; Takoudis, Christos; Mathew, Mathew T

2016-02-01

The negative impact of in vivo corrosion of metallic biomedical implants remains a complex problem in the medical field. We aimed to determine the effects of electrochemical anodization (60V, 2h) and thermal oxidation (600°C) on the corrosive behavior of Ti-6Al-4V, with serum proteins, at physiological temperature. Anodization produced a mixture of anatase and amorphous TiO2 nanopores and nanotubes, while the annealing process yielded an anatase/rutile mixture of TiO2 nanopores and nanotubes. The surface area was analyzed by the Brunauer-Emmett-Teller method and was estimated to be 3 orders of magnitude higher than that of polished control samples. Corrosion resistance was evaluated on the parameters of open circuit potential, corrosion potential, corrosion current density, passivation current density, polarization resistance and equivalent circuit modeling. Samples both anodized and thermally oxidized exhibited shifts of open circuit potential and corrosion potential in the noble direction, indicating a more stable nanoporous/nanotube layer, as well as lower corrosion current densities and passivation current densities than the smooth control. They also showed increased polarization resistance and diffusion limited charge transfer within the bulk oxide layer. The treatment groups studied can be ordered from greatest corrosion resistance to least as Anodized+Thermally Oxidized > Anodized > Smooth > Thermally Oxidized for the conditions investigated. This study concludes that anodized surface has a potential to prevent long term implant failure due to corrosion in a complex in-vivo environment. Copyright © 2015 Elsevier B.V. All rights reserved.

Influence of hydroxyapatite on the corrosion resistance of the Ti-13Nb-13Zr alloy.

PubMed

Duarte, Laís T; Biaggio, Sonia R; Rocha-Filho, Romeu C; Bocchi, Nerilso

2009-05-01

Electrochemical analyses on the biocompatible alloy Ti-13Nb-13Zr wt% in an electrolyte simulating physiological medium (PBS solution) are reported. Hydroxyapatite (HA) films were obtained on the alloy by electrodeposition at constant cathodic current. Samples of the alloy covered with an anodic-oxide film or an anodic-oxide/HA film were analyzed by open circuit potential and electrochemical impedance spectroscopy measurements during 180 days in the PBS electrolyte. Analyses of the open-circuit potential (E (oc)) values indicated that the oxide/HA film presents better protection characteristics than the oxide only. This behavior was corroborated by the higher film resistances obtained from impedance data, indicating that, besides improving the alloy osteointegration, the hydroxyapatite film may also increase the corrosion protection of the biomaterial.

Long-term stability of microcrystalline silicon p-i-n solar cells exposed to sun light

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sanguino, P.; Koynov, S.; Schwarz, R.

1999-07-01

The performance of an entirely microcrystalline p-i-n solar cell was monitored during a long-term outdoor test in Lisbon starting in September 1998. A small decrease of the short circuit current was observed after 5 months of operation. The open-circuit voltage remained stable around 400 mV. From the analysis of the I-V characteristic in dark and under illumination they could identify the weak points of the test structure, like large series resistance, high recombination rate, and intensity-dependent collection efficiency.

Inverted organic photovoltaic device with a new electron transport layer

NASA Astrophysics Data System (ADS)

Kim, Hyeong Pil; Yusoff, Abd Rashid bin Mohd; Kim, Hyo Min; Lee, Hee Jae; Seo, Gi Jun; Jang, Jin

2014-03-01

We demonstrate that there is a new solution-processed electron transport layer, lithium-doped zinc oxide (LZO), with high-performance inverted organic photovoltaic device. The device exhibits a fill factor of 68.58%, an open circuit voltage of 0.86 V, a short-circuit current density of -9.35 cm/mA2 along with 5.49% power conversion efficiency. In addition, we studied the performance of blend ratio dependence on inverted organic photovoltaics. Our device also demonstrates a long stability shelf life over 4 weeks in air.

Genetically Encoded Catalytic Hairpin Assembly for Sensitive RNA Imaging in Live Cells.

PubMed

Mudiyanselage, Aruni P K K Karunanayake; Yu, Qikun; Leon-Duque, Mark A; Zhao, Bin; Wu, Rigumula; You, Mingxu

2018-06-26

DNA and RNA nanotechnology has been used for the development of dynamic molecular devices. In particular, programmable enzyme-free nucleic acid circuits, such as catalytic hairpin assembly, have been demonstrated as useful tools for bioanalysis and to scale up system complexity to an extent beyond current cellular genetic circuits. However, the intracellular functions of most synthetic nucleic acid circuits have been hindered by challenges in the biological delivery and degradation. On the other hand, genetically encoded and transcribed RNA circuits emerge as alternative powerful tools for long-term embedded cellular analysis and regulation. Herein, we reported a genetically encoded RNA-based catalytic hairpin assembly circuit for sensitive RNA imaging inside living cells. The split version of Broccoli, a fluorogenic RNA aptamer, was used as the reporter. One target RNA can catalytically trigger the fluorescence from tens-to-hundreds of Broccoli. As a result, target RNAs can be sensitively detected. We have further engineered our circuit to allow easy programming to image various target RNA sequences. This design principle opens the arena for developing a large variety of genetically encoded RNA circuits for cellular applications.

Increasing the open-circuit voltage of photoprotein-based photoelectrochemical cells by manipulation of the vacuum potential of the electrolytes.

PubMed

Tan, Swee Ching; Crouch, Lucy I; Mahajan, Sumeet; Jones, Michael R; Welland, Mark E

2012-10-23

The innately highly efficient light-powered separation of charge that underpins natural photosynthesis can be exploited for applications in photoelectrochemistry by coupling nanoscale protein photoreaction centers to man-made electrodes. Planar photoelectrochemical cells employing purple bacterial reaction centers have been constructed that produce a direct current under continuous illumination and an alternating current in response to discontinuous illumination. The present work explored the basis of the open-circuit voltage (V(OC)) produced by such cells with reaction center/antenna (RC-LH1) proteins as the photovoltaic component. It was established that an up to ~30-fold increase in V(OC) could be achieved by simple manipulation of the electrolyte connecting the protein to the counter electrode, with an approximately linear relationship being observed between the vacuum potential of the electrolyte and the resulting V(OC). We conclude that the V(OC) of such a cell is dependent on the potential difference between the electrolyte and the photo-oxidized bacteriochlorophylls in the reaction center. The steady-state short-circuit current (J(SC)) obtained under continuous illumination also varied with different electrolytes by a factor of ~6-fold. The findings demonstrate a simple way to boost the voltage output of such protein-based cells into the hundreds of millivolts range typical of dye-sensitized and polymer-blend solar cells, while maintaining or improving the J(SC). Possible strategies for further increasing the V(OC) of such protein-based photoelectrochemical cells through protein engineering are discussed.

Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes

DOE PAGES

Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; ...

2015-03-01

Current-voltage (IV) characteristics of two AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) with differing densities of open-core threading dislocations (nanopipes) are analyzed. A three-diode circuit is simulated to emulate the IV characteristics of the DUV-LEDs, but is only able to accurately model the lower leakage current, lower nanopipe density DUV-LED. It was found that current leakage through the nanopipes in these structures is rectifying, despite nanopipes being previously established as inherently n-type. Using defect-sensitive etching, the nanopipes are revealed to terminate within the p-type GaN capping layer of the DUV-LEDs. The circuit model is modified to account for another p-nmore » junction between the n-type nanopipes and the p-type GaN, and an excellent fit to the IV characteristics of the leaky DUV-LED is achieved.« less

46 CFR 111.50-3 - Protection of conductors.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 46 Shipping 4 2013-10-01 2013-10-01 false Protection of conductors. 111.50-3 Section 111.50-3 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS... of overcurrent protection for conductors is to open the electric circuit if the current reaches a...

46 CFR 111.50-3 - Protection of conductors.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 46 Shipping 4 2014-10-01 2014-10-01 false Protection of conductors. 111.50-3 Section 111.50-3 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS... of overcurrent protection for conductors is to open the electric circuit if the current reaches a...

46 CFR 111.50-3 - Protection of conductors.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 46 Shipping 4 2012-10-01 2012-10-01 false Protection of conductors. 111.50-3 Section 111.50-3 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING ELECTRIC SYSTEMS... of overcurrent protection for conductors is to open the electric circuit if the current reaches a...

46 CFR 111.50-3 - Protection of conductors.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 46 Shipping 4 2011-10-01 2011-10-01 false Protection of conductors. 111.50-3 Section 111.50-3...-GENERAL REQUIREMENTS Overcurrent Protection § 111.50-3 Protection of conductors. (a) Purpose. The purpose of overcurrent protection for conductors is to open the electric circuit if the current reaches a...

46 CFR 111.50-3 - Protection of conductors.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 4 2010-10-01 2010-10-01 false Protection of conductors. 111.50-3 Section 111.50-3...-GENERAL REQUIREMENTS Overcurrent Protection § 111.50-3 Protection of conductors. (a) Purpose. The purpose of overcurrent protection for conductors is to open the electric circuit if the current reaches a...

Fabrication of Double Layered Hybrid Solar Cells Consisting of Low-Temperature Anatase Titanium Oxide and Conducting Polymer

NASA Astrophysics Data System (ADS)

Itoh, Eiji; Takamizawa, Yuta; Miyairi, Keiichi

2008-01-01

We have prepared a photovoltaic device consisting of poly[2-methoxy,5-(2'-ethyl-hexyloxy)-p-phenylenevinylene] (MEHPPV) and an n-type crystalline TiO2 (anatase) thin film by high-temperature process and low-temperature process at a temperature lower than 150 °C by sol-gel techniques. The refluxed sol of titanium-tetraisopropoxide (TTI) with water and nitric acid formed anatase phase TiO2 without requiring the high-temperature process, and the wettability of sol is successfully improved by diluting sol with ethanol. The short circuit current JSC, fill factor, and the power conversion efficiency increase with the heat-treatment temperature of TiO2, which is attributed to the improvement of series resistance of the TiO2 film. On the other hand, the open circuit voltage remains almost constant (ca. 1.0 V) with the change in heat-treatment temperature between 60 and 120 °C, whereas it decreases to 0.76 V in the device prepared on the TiO2 film sintered at 500 °C, probably owing to the change in crystallinity. The origin of open circuit voltage in indium tin oxide (ITO)/TiO2/MEHPPV/Au is also discussed. The open circuit voltage corresponds well to the energy difference of the conduction band edge of TiO2 and the highest occupied molecular orbital (HOMO) of MEHPPV (ca. 1 eV) in the device consisting of the ITO/low-temperature TiO2/MEHPPV/Au system.

DISTRIBUTED RC NETWORKS WITH RATIONAL TRANSFER FUNCTIONS,

DTIC Science & Technology

A distributed RC circuit analogous to a continuously tapped transmission line can be made to have a rational short-circuit transfer admittance and...one rational shortcircuit driving-point admittance. A subcircuit of the same structure has a rational open circuit transfer impedance and one rational ...open circuit driving-point impedance. Hence, rational transfer functions may be obtained while considering either generator impedance or load

On the SCTC-OCTC Method for the Analysis and Design of Circuits

ERIC Educational Resources Information Center

Salvatori, S.; Conte, G.

2009-01-01

This paper discusses guidelines that emphasize the relevance of short-circuit- and open-circuit-time constant (SCTC and OCTC, respectively) methods in the analysis and design of electronic amplifiers. It is demonstrated that it is only necessary to grasp a few concepts in order to understand that the two short- and open-circuit cases fall into a…

A simple theory of back surface field /BSF/ solar cells

NASA Technical Reports Server (NTRS)

Von Roos, O.

1978-01-01

A theory of an n-p-p/+/ junction is developed, entirely based on Shockley's depletion layer approximation. Under the further assumption of uniform doping the electrical characteristics of solar cells as a function of all relevant parameters (cell thickness, diffusion lengths, etc.) can quickly be ascertained with a minimum of computer time. Two effects contribute to the superior performance of a BSF cell (n-p-p/+/ junction) as compared to an ordinary solar cell (n-p junction). The sharing of the applied voltage among the two junctions (the n-p and the p-p/+/ junction) decreases the dark current and the reflection of minority carriers by the builtin electron field of the p-p/+/ junction increases the short-circuit current. The theory predicts an increase in the open-circuit voltage (Voc) with a decrease in cell thickness. Although the short-circuit current decreases at the same time, the efficiency of the cell is virtually unaltered in going from a thickness of 200 microns to a thickness of 50 microns. The importance of this fact for space missions where large power-to-weight ratios are required is obvious.

High voltage and current, gate assisted, turn-off thyristor development

NASA Technical Reports Server (NTRS)

Nowalk, T. P.; Brewster, J. B.; Kao, Y. C.

1972-01-01

An improved high speed power switch with unique turn-off capability was developed. This gate assisted turn-off thyristor (GATT) was rated 1000 volts and 100 amperes with turn-off times of 2 microseconds. Fifty units were delivered for evaluation. In addition, test circuits designed to relate to the series inverter application were built and demonstrated. In the course of this work it was determined that the basic device design is adequate to meet the static characteristics and dynamic turn-off specification. It was further determined that the turn-on specification is critically dependent on the gate drive circuit due to the distributive nature of the cathode-gate geometry. Future work should emphasize design modifications which reduce the gate current required for fast turn-on, thereby opening the way to higher power (current) devices.

Growth and analysis of micro and nano CdTe arrays for solar cell applications

NASA Astrophysics Data System (ADS)

Aguirre, Brandon Adrian

CdTe is an excellent material for infrared detectors and photovoltaic applications. The efficiency of CdTe/CdS solar cells has increased very rapidly in the last 3 years to ˜20% but is still below the maximum theoretical value of 30%. Although the short-circuit current density is close to its maximum of 30 mA/cm2, the open circuit voltage has potential to be increased further to over 1 Volt. The main limitation that prevents further increase in the open-circuit voltage and therefore efficiency is the high defect density in the CdTe absorber layer. Reducing the defect density will increase the open-circuit voltage above 1 V through an increase in the carrier lifetime and concentration to tau >10 ns and p > 10 16 cm-3, respectively. However, the large lattice mismatch (10%) between CdTe and CdS and the polycrystalline nature of the CdTe film are the fundamental reasons for the high defect density and pose a difficult challenge to solve. In this work, a method to physically and electrically isolate the different kinds of defects at the nanoscale and understand their effect on the electrical performance of CdTe is presented. A SiO2 template with arrays of window openings was deposited between the CdTe and CdS to achieve selective-area growth of the CdTe via close-space sublimation. The diameter of the window openings was varied from the micro to the nanoscale to study the effect of size on nucleation, grain growth, and defect density. The resulting structures enabled the possibility to electrically isolate and individually probe micrometer and nanoscale sized CdTe/CdS cells. Electron back-scattered diffraction was used to observe grain orientation and defects in the miniature cells. Scanning and transmission electron microscopy was used to study the morphology, grain boundaries, grain orientation, defect structure, and strain in the layers. Finally, conducting atomic force microscopy was used to study the current-voltage characteristics of the solar cells. An important part of this work was the ability to directly correlate the one-to-one relationship between the electrical performance and defect structure of individual nanoscale cells. This method is general and can be applied to other material systems to study the electrical-microstructure relationship on a one-to-one basis with nanoscale resolution.

Influence of excitons interaction with charge carriers on photovoltaic parameters in organic solar cells

NASA Astrophysics Data System (ADS)

Głowienka, Damian; Szmytkowski, Jędrzej

2018-03-01

We report on theoretical analysis of excitons annihilation on charge carriers in organic solar cells. Numerical calculations based on transient one-dimensional drift-diffusion model have been carried out. An impact of three quantities (an annihilation rate constant, an exciton mobility and a recombination reduction factor) on current density and concentrations of charge carriers and excitons is investigated. Finally, we discuss the influence of excitons interaction with electrons and holes on four photovoltaic parameters (a short-circuit current, an open-circuit voltage, a fill factor and a power conversion efficiency). The conclusion is that the annihilation process visibly decreases the efficiency of organic photocells, if the annihilation rate constant is greater than 10-15m3s-1 .

Structural, electrical and photovoltaic properties of CoS/Si heterojunction prepared by spray pyrolysis

NASA Astrophysics Data System (ADS)

El Radaf, I. M.; Nasr, Mahmoud; Mansour, A. M.

2018-01-01

Au/p-CoS/n-Si/Al heterojunction device was fabricated by spray pyrolysis technique. The structural and morphological features were examined by x-ray diffraction, scanning electron microscope and energy dispersive x-ray analysis. The capacitance-voltage characteristics of the prepared heterojunction were analyzed at room temperature in the dark. The current-voltage characteristics were examined under dark and different incident light intensities 20-100 mW cm-2. The rectification ratio, series resistance, shunt resistance, diode ideality factor and the effective barrier height were determined at dark and illumination conditions. The photovoltaic parameters such as short circuit current density, open circuit voltage, fill factor and power conversion efficiency were calculated at different incident light intensities.

Formation of BaSi2 heterojunction solar cells using transparent MoOx hole transport layers

NASA Astrophysics Data System (ADS)

Du, W.; Takabe, R.; Baba, M.; Takeuchi, H.; Hara, K. O.; Toko, K.; Usami, N.; Suemasu, T.

2015-03-01

Heterojunction solar cells that consist of 15 nm thick molybdenum trioxide (MoOx, x < 3) as a hole transport layer and 600 nm thick unpassivated or passivated n-BaSi2 layers were demonstrated. Rectifying current-voltage characteristics were observed when the surface of BaSi2 was exposed to air. When the exposure time was decreased to 1 min, an open circuit voltage of 200 mV and a short circuit current density of 0.5 mA/cm2 were obtained under AM1.5 illumination. The photocurrent density under a reverse bias voltage of -1 V reached 25 mA/cm2, which demonstrates the significant potential of BaSi2 for solar cell applications.

Automatic Locker Key With Barcode Based Microcontroller Atmega 8535

NASA Astrophysics Data System (ADS)

Fahmi, M. Irfan; Efendi Hutagalung, Jhonson

2017-12-01

MCB (miniature circuit breaker) is an electromagnetic device that embodies complete enclosure in a molded insulating material. The main function of an MCB is to switch the circuit, i.e., to open the circuit (which has been connected to it) automatically when the current passing through it (MCB) exceeds the value for which it is set. Unlike fuse, an MCB can be easily reset and thus offers improved operational safety and greater convenience without incurring large operating cost.The principal of operation is simple. In simple terms MCB is a switch which automatically turns off when the current flowing through it passes the maximum allowable limit. Generally MCB are designed to protect against over current and over temperature faults (over heating). Sometimes the overload the current through the bimetal causes to raise the temperature of it. The heat generated within the bimetal itself enough to cause deflection due to thermal expansion of metals. This solution is used by LDR, and LM 35 as the sencor to control center. Therefore it is very important because it is related about local control switches, isolating switches against faults and overload protection devices for installations or specific equipments or appliances

Development and investigation of silicon converter beta radiation 63Ni isotope

NASA Astrophysics Data System (ADS)

Krasnov, A. A.; Legotin, S. A.; Murashev, V. N.; Didenko, S. I.; Rabinovich, O. I.; Yurchuk, S. Yu; Omelchenko, Yu K.; Yakimov, E. B.; Starkov, V. V.

2016-02-01

In this paper the results of the creation and researching characteristics of, experimental betavoltaic converters (BVC), based on silicon are discussed. It was presented the features of structural and technological performance of planar 2 D- structure of BVC. To study the parameters of the converter stream the beta particles of the radioisotope was simulated by 63Ni electron flux from scanning electron microscope. It was investigated the dependence of the collecting electrons efficiency from the beam energy current-voltage characteristic was measured when irradiated by an electron beam, from which the value of the short-circuit current density equal to 126 nA / cm2 and the value of the open circuit voltage of 150 mV were obtained. The maximum power density at 70 mV is 9.5 nW / cm2, and the conversion efficiency is 2.1%. It was presented the results of experimental studies of the current-voltage characteristics of samples by irradiating a film 63Ni. The values of load voltage 111 mV and short circuit current density of 27 nA / cm2 were obtained. Maximum power density was 1.52 nW / cm2.

Spin-Dependent Processes Measured without a Permanent Magnet.

PubMed

Fontanesi, Claudio; Capua, Eyal; Paltiel, Yossi; Waldeck, David H; Naaman, Ron

2018-05-07

A novel Hall circuit design that can be incorporated into a working electrode, which is used to probe spin-selective charge transfer and charge displacement processes, is reviewed herein. The general design of a Hall circuit based on a semiconductor heterostructure, which forms a shallow 2D electron gas and is used as an electrode, is described. Three different types of spin-selective processes have been studied with this device in the past: i) photoinduced charge exchange between quantum dots and the working electrode through chiral molecules is associated with spin polarization that creates a local magnetization and generates a Hall voltage; ii) charge polarization of chiral molecules by an applied voltage is accompanied by a spin polarization that generates a Hall voltage; and iii) cyclic voltammetry (current-voltage) measurements of electrochemical redox reactions that can be spin-analyzed by the Hall circuit to provide a third dimension (spin) in addition to the well-known current and voltage dimensions. The three studies reviewed open new doors into understanding both the spin current and the charge current in electronic materials and electrochemical processes. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Microfabrication of low-loss lumped-element Josephson circuits for non-reciprocal and parametric devices

NASA Astrophysics Data System (ADS)

Cicak, Katarina; Lecocq, Florent; Ranzani, Leonardo; Peterson, Gabriel A.; Kotler, Shlomi; Teufel, John D.; Simmonds, Raymond W.; Aumentado, Jose

Recent developments in coupled mode theory have opened the doors to new nonreciprocal amplification techniques that can be directly leveraged to produce high quantum efficiency in current measurements in microwave quantum information. However, taking advantage of these techniques requires flexible multi-mode circuit designs comprised of low-loss materials that can be implemented using common fabrication techniques. In this talk we discuss the design and fabrication of a new class of multi-pole lumped-element superconducting parametric amplifiers based on Nb/Al-AlOx/Nb Josephson junctions on silicon or sapphire. To reduce intrinsic loss in these circuits we utilize PECVD amorphous silicon as a low-loss dielectric (tanδ 5 ×10-4), resulting in nearly quantum-limited directional amplification.

Innovation Incubator: Whisker Labs Technical Evaluation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sparn, Bethany F.; Frank, Stephen M.; Earle, Lieko

The Wells Fargo Innovation Incubator (IN2) is a program to foster and accelerate startup companies with commercial building energy-efficiency and demand management technologies. The program is funded by the Wells Fargo Foundation and co-administered by the National Renewable Energy Laboratory (NREL). Whisker Labs, an Oakland, California-based company, was one of four awardees in the first IN2 cohort and was invited to participate in the program because of its novel electrical power sensing technology for circuit breakers. The stick-on Whisker meters install directly on the front face of the circuit breakers in an electrical panel using adhesive, eliminating the need tomore » open the panel and install current transducers (CTs) on the circuit wiring.« less

Metal-Insulator-Semiconductor Nanowire Network Solar Cells.

PubMed

Oener, Sebastian Z; van de Groep, Jorik; Macco, Bart; Bronsveld, Paula C P; Kessels, W M M; Polman, Albert; Garnett, Erik C

2016-06-08

Metal-insulator-semiconductor (MIS) junctions provide the charge separating properties of Schottky junctions while circumventing the direct and detrimental contact of the metal with the semiconductor. A passivating and tunnel dielectric is used as a separation layer to reduce carrier recombination and remove Fermi level pinning. When applied to solar cells, these junctions result in two main advantages over traditional p-n-junction solar cells: a highly simplified fabrication process and excellent passivation properties and hence high open-circuit voltages. However, one major drawback of metal-insulator-semiconductor solar cells is that a continuous metal layer is needed to form a junction at the surface of the silicon, which decreases the optical transmittance and hence short-circuit current density. The decrease of transmittance with increasing metal coverage, however, can be overcome by nanoscale structures. Nanowire networks exhibit precisely the properties that are required for MIS solar cells: closely spaced and conductive metal wires to induce an inversion layer for homogeneous charge carrier extraction and simultaneously a high optical transparency. We experimentally demonstrate the nanowire MIS concept by using it to make silicon solar cells with a measured energy conversion efficiency of 7% (∼11% after correction), an effective open-circuit voltage (Voc) of 560 mV and estimated short-circuit current density (Jsc) of 33 mA/cm(2). Furthermore, we show that the metal nanowire network can serve additionally as an etch mask to pattern inverted nanopyramids, decreasing the reflectivity substantially from 36% to ∼4%. Our extensive analysis points out a path toward nanowire based MIS solar cells that exhibit both high Voc and Jsc values.

Self-healing fuse development.

NASA Technical Reports Server (NTRS)

Jones, N. D.

1972-01-01

The self-healing fuse is a very fast acting current overload protective device which opens and recloses in a few milliseconds. The fuse confines a mercury column in an insulated channel and returns the mercury to the channel after firing. Ratings 5 to 50 A at 600 peak volts are possible with a life of hundreds of cycles. Compared to conventional fuses, much less fault current energy fires the fuse by heating the mercury to boiling temperature. Next an arc discharge develops while explosive forces expel the liquid mercury from the channel. Then the high impedance arc either extinguishes immediately, or operates for a few milliseconds, until a switch opens the circuit.

Extended behavioural device modelling and circuit simulation with Qucs-S

NASA Astrophysics Data System (ADS)

Brinson, M. E.; Kuznetsov, V.

2018-03-01

Current trends in circuit simulation suggest a growing interest in open source software that allows access to more than one simulation engine while simultaneously supporting schematic drawing tools, behavioural Verilog-A and XSPICE component modelling, and output data post-processing. This article introduces a number of new features recently implemented in the 'Quite universal circuit simulator - SPICE variant' (Qucs-S), including structure and fundamental schematic capture algorithms, at the same time highlighting their use in behavioural semiconductor device modelling. Particular importance is placed on the interaction between Qucs-S schematics, equation-defined devices, SPICE B behavioural sources and hardware description language (HDL) scripts. The multi-simulator version of Qucs is a freely available tool that offers extended modelling and simulation features compared to those provided by legacy circuit simulators. The performance of a number of Qucs-S modelling extensions are demonstrated with a GaN HEMT compact device model and data obtained from tests using the Qucs-S/Ngspice/Xyce ©/SPICE OPUS multi-engine circuit simulator.

Two-dimensional lattice gauge theories with superconducting quantum circuits

PubMed Central

Marcos, D.; Widmer, P.; Rico, E.; Hafezi, M.; Rabl, P.; Wiese, U.-J.; Zoller, P.

2014-01-01

A quantum simulator of U(1) lattice gauge theories can be implemented with superconducting circuits. This allows the investigation of confined and deconfined phases in quantum link models, and of valence bond solid and spin liquid phases in quantum dimer models. Fractionalized confining strings and the real-time dynamics of quantum phase transitions are accessible as well. Here we show how state-of-the-art superconducting technology allows us to simulate these phenomena in relatively small circuit lattices. By exploiting the strong non-linear couplings between quantized excitations emerging when superconducting qubits are coupled, we show how to engineer gauge invariant Hamiltonians, including ring-exchange and four-body Ising interactions. We demonstrate that, despite decoherence and disorder effects, minimal circuit instances allow us to investigate properties such as the dynamics of electric flux strings, signaling confinement in gauge invariant field theories. The experimental realization of these models in larger superconducting circuits could address open questions beyond current computational capability. PMID:25512676

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stoddard, Ryan J.; Eickemeyer, Felix T.; Katahara, John K.

High-bandgap mixed-halide hybrid perovskites have higher open-circuit voltage deficits and lower carrier diffusion lengths than their lower-bandgap counterparts. We have developed a ligand-assisted crystallization (LAC) technique that introduces additives in situ during the solvent wash and developed a new method to dynamically measure the absolute intensity steady-state photoluminescence and the mean carrier diffusion length simultaneously. The measurements reveal four distinct regimes of material changes and show that photoluminescence brightening often coincides with losses in carrier transport, such as in degradation or phase segregation. Further, the measurements enabled optimization of LAC on the 1.75 eV bandgap FA 0.83Cs 0.17Pb(I 0.66Br 0.34)more » 3, resulting in an enhancement of the photoluminescence quantum yield (PLQY) of over an order of magnitude, an increase of 80 meV in the quasi-Fermi level splitting (to 1.29 eV), an increase in diffusion length by a factor of 3.5 (to over 1 μm), and enhanced open-circuit voltage and short-circuit current from photovoltaics fabricated from the LAC-treated films.« less

Current interruption in inductive storage systems with inertial current source

NASA Astrophysics Data System (ADS)

Vitkovitsky, I. M.; Conte, D.; Ford, R. D.; Lupton, W. H.

1980-03-01

Utilization of inertial current source inductive storage with high power output requires a switch with short opening time. This switch must operate as a circuit breaker, i.e., be capable to carry the current for a time period characteristic of inertial systems, such as homopolar generators. For reasonable efficiency, its opening time must be fast to minimize the energy dissipated in downstream fuse stages required for any additional pulse compression. A switch that satisfies these criteria, as well as other requirements such as that for high voltage operation associated with high power output, is an explosively driven switch consisting of large number of gaps arranged in series. The performance of this switch in limiting and/or interrupting currents produced by large generators has been studied. Single switch modules were designed and tested for limiting the commutating current output of 1 MW, 60 Hz, generator and 500 KJ capacitor banks. Current limiting and commutation were evaluated, using these sources, for currents ranging up to 0.4 MA. The explosive opening of the switch was found to provide an effective first stage for further pulse compression. It opens in tens of microseconds, commutates current at high efficiency ( = 905) recovers very rapidly over a wide range of operating conditions.

Multiple-channel detection of cellular activities by ion-sensitive transistors

NASA Astrophysics Data System (ADS)

Machida, Satoru; Shimada, Hideto; Motoyama, Yumi

2018-04-01

An ion-sensitive field-effect transistor to record cellular activities was demonstrated. This field-effect transistor (bio transistor) includes cultured cells on the gate insulator instead of gate electrode. The bio transistor converts a change in potential underneath the cells into variation of the drain current when ion channels open. The bio transistor has high detection sensitivity to even minute variations in potential utilizing a subthreshold swing region. To open ion channels, a reagent solution (acetylcholine) was added to a human-originating cell cultured on the bio transistor. The drain current was successfully decreased with the addition of acetylcholine. Moreover, we attempted to detect the opening of ion channels using a multiple-channel measurement circuit containing several bio transistors. As a consequence, the drain current distinctly decreased only after the addition of acetylcholine. We confirmed that this measurement system including bio transistors enables to observation of cellular activities sensitively and simultaneously.

Ion Fluxes and Short-Circuit Current in Internally Perfused Cells of Valonia ventricosa

PubMed Central

Gutknecht, John

1967-01-01

Ion transport in the giant celled marine alga, Valonia ventricosa, was studied during internal perfusion and short-circuiting of the vacuole potential. The perfusing and bathing solutions were similar to natural Valonia sap and contained the following concentrations of major ions: Na 51, K 618, and Cl 652 mM. The average short-circuit current (I sc) was 97 pEq/cm2 sec (inward positive current), and the average open-circuit potential difference (PD) was 74 mv (vacuole positive to external solution). Perfused and short-circuited cells showed a small net influx of Na (2.0 pEq/cm2 sec) and large net influxes of K (80 pEq/cm2 sec) and Cl (50 pEq/cm2 sec). Unidirectional K influx was proportional to I sc, but more than one-half of the I sc remained unaccounted for. Both the I sc and PD were partly light-dependent, declining rapidly during the first 1–2 min of darkness. Ouabain (5 x 10-4 M) had little effect on the influx of Na or K and had no effect on I inf or PD. Fluid was absorbed at a rate of about 93 pliter/cm2 sec. Reversing the direction of fluid movement by adding mannitol to the outside solution had little effect on ion movements. The ionic and electrical properties of normal and perfused cells of Valonia are compared. PMID:6050968

The Alkali Metal Thermal-To-Electric Converter for Solar System Exploration

NASA Technical Reports Server (NTRS)

Ryan, M.

1999-01-01

AMTEC, the Alkali Metal Thermal to Electric Converter, is a direct thermal to electric energy conversion device; it has been demostrated to perform at high power densities, with open circuit voltages in single electrochemical cells up to 1.6 V and current desities up to 2.0 A/cm(sup 2).

Robust Diagnosis Method Based on Parameter Estimation for an Interturn Short-Circuit Fault in Multipole PMSM under High-Speed Operation.

PubMed

Lee, Jewon; Moon, Seokbae; Jeong, Hyeyun; Kim, Sang Woo

2015-11-20

This paper proposes a diagnosis method for a multipole permanent magnet synchronous motor (PMSM) under an interturn short circuit fault. Previous works in this area have suffered from the uncertainties of the PMSM parameters, which can lead to misdiagnosis. The proposed method estimates the q-axis inductance (Lq) of the faulty PMSM to solve this problem. The proposed method also estimates the faulty phase and the value of G, which serves as an index of the severity of the fault. The q-axis current is used to estimate the faulty phase, the values of G and Lq. For this reason, two open-loop observers and an optimization method based on a particle-swarm are implemented. The q-axis current of a healthy PMSM is estimated by the open-loop observer with the parameters of a healthy PMSM. The Lq estimation significantly compensates for the estimation errors in high-speed operation. The experimental results demonstrate that the proposed method can estimate the faulty phase, G, and Lq besides exhibiting robustness against parameter uncertainties.

Performance of vegetative and fruits Zn/Cu based electrochemical cell

NASA Astrophysics Data System (ADS)

Khan, Md. Kamrul Alam, Prof. _., Dr.

2017-01-01

We have studied the performance of PKL, Aloe Vera, Tomato and Lemon juice electrochemical Cells without load condition for 1:1 Zn/Cu based electrodes. It was studied the variation of Open circuit voltage (Voc), Short current (Isc) and Maximum Power (Pmax) with the variation of time for PKL, Aloe Vera, Tomato and Lemon juice electrochemical Cells. It was seen from the research observation that the discharge characteristic of the PKL electrochemical cell was more efficient than the other three Aloe Vera, Tomato and Lemon juice electrochemical Cells. Because the Open circuit voltage (Voc), Short current (Isc) and Maximum Power (Pmax) are more stable and steady than the others three Aloe Vera, Tomato and Lemon juice electrochemical Cells. Furthermore, to enhance the performance we have also studied the secondary salt effect by using the NaCl as an electrolyte with the PKL, Aloe Vera and Lemon juice electrochemical Cells. Most of the results have been tabulated and graphically discussed. I am grateful to the authority of the Science and technology ministry,Bangladesh for financial support during the research work.

49 CFR 236.73 - Open-wire transmission line; clearance to other circuits.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 49 Transportation 4 2011-10-01 2011-10-01 false Open-wire transmission line; clearance to other..., AND APPLIANCES Rules and Instructions: All Systems Wires and Cables § 236.73 Open-wire transmission line; clearance to other circuits. Open-wire transmission line operating at voltage of 750 volts or...

49 CFR 236.73 - Open-wire transmission line; clearance to other circuits.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 4 2010-10-01 2010-10-01 false Open-wire transmission line; clearance to other..., AND APPLIANCES Rules and Instructions: All Systems Wires and Cables § 236.73 Open-wire transmission line; clearance to other circuits. Open-wire transmission line operating at voltage of 750 volts or...

Refinements in the short-circuit technique and its application to active potassium transport across the cecropia midgut.

PubMed

Wood, J L; Moreton, R B

1978-12-01

1. The conventional, two-electrode method for measuring potential difference across an epithelium is subject to error due to potential gradients caused by current flow in the bathing medium. Mathematical analysis shows that the error in measuring short-circuit current is proportional to the resistivity of the bathing medium and to the separation of the two recording electrodes. It is particularly serious for the insect larval midgut, where the resistivity of the medium is high, and that of the tissue is low. 2. A system has been devised, which uses a third recording electrode to monitor directly the potential gradient in the bathing medium. By suitable electrical connexions, the gradient can be automatically compensated, leaving a residual error which depends on the thickness of the tissue, but not on the electrode separation. Because the thicknesses of most epithelia are smaller than the smallest practical electrode spacing, this error is smaller than that inherent in a two-electrode system. 3. Since voltage-gradients are automatically compensated, it is possible to obtain continuous readings of potential and current. A 'voltage-clamp' circuit is described, which allows the time-course of the short-circuit current to be studied. 4.The three-electrode system has been used to study the larval midgut of Hyalophora cecropia. The average results from five experiments were: initial potential difference (open-circuit): 98+/-11 mV (S.E.M.); short-circuit current at time 60 min: 498+/-160 microA cm=2; 'steady-state' resistance at 60 min: 150+/-26 omega cm2. The current is equivalent to a net potassium transport of 18.6 mu-equiv cm-2 h-1. 5. The electrical parameters of the midgut change rapidly with time. The potential difference decays with a half-time of about 158 min, the resistance increases with a half-time of about 16 min, and the short-circuit current decays as the sum of two exponential terms, with half-times of about 16 and 158 min respectively. In addition, potential and short-circuit current show transient responses to step changes. 6. The properties of the midgut are compared with those of other transporting epithelia, and their dependence on the degree of folding of the preparation is discussed. Their time-dependence is discussed in the context of changes in potassium content of the tissue, and the implications for measurements depending on the assumption of a steady state are outlined.

Identification of Microbial Communities in Open and Closed Circuit Bioelectrochemical MBRs by High-Throughput 454 Pyrosequencing

PubMed Central

Huang, Jian; Wang, Zhiwei; Zhu, Chaowei; Ma, Jinxing; Zhang, Xingran; Wu, Zhichao

2014-01-01

Two bioelectrochemical membrane bioreactors (MBRs) developed by integrating microbial fuel cell and MBR technology were operated under closed-circuit and open-circuit modes, and high-throughput 454 pyrosequencing was used to investigate the effects of the power generation on the microbial community of bio-anode and bio-cathode. Microbes on the anode under open-circuit operation (AO) were enriched and highly diverse when compared to those on the anode under closed-circuit operation (AC). However, among the cathodes the closed-circuit mode (CC) had richer and more diverse microbial community compared to the cathode under open-circuit mode (CO). On the anodes AO and AC, Proteobacteria and Bacteroidetes were the dominant phyla, while Firmicutes was enriched only on AC. Deltaproteobacteria affiliated to Proteobacteria were also more abundant on AC than AO. Furthermore, the relative abundance of Desulfuromonas, which are well-known electrogenic bacteria, were much higher on AC (10.2%) when compared to AO (0.11%), indicating that closed-circuit operation was more conducive for the growth of electrogenic bacteria on the anodes. On the cathodes, Protebacteria was robust on CC while Bacteroidetes was more abundant on CO. Rhodobacter and Hydrogenophaga were also enriched on CC than CO, suggesting that these genera play a role in electron transfer from the cathode surface to the terminal electron acceptors in the bioelectrochemical MBR under closed-circuit operation. PMID:24705450

Fiber-based architectures for organic photovoltaics

NASA Astrophysics Data System (ADS)

Liu, Jiwen; Namboothiry, Manoj A. G.; Carroll, David L.

2007-02-01

Using poly(3-hexylthiophene) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61 bulk-heterojunction blends as the absorbing material, organic photovoltaic devices have been fabricated onto multimode optical fibers. The behavior of the short circuit current density, filling factor, and open circuit voltage as the angle of the incident light onto the cleaved fiber face is varied suggests that the evanescent field at the interface between the fiber and the transparent contact may play a role in coupling light from the fiber into the device. Further, optical loss into the device increases as the fiber diameter decreases.

Betavoltaics using scandium tritide and contact potential difference

NASA Astrophysics Data System (ADS)

Liu, Baojun; Chen, Kevin P.; Kherani, Nazir P.; Zukotynski, Stefan; Antoniazzi, Armando B.

2008-02-01

Tritium-powered betavoltaic micropower sources using contact potential difference (CPD) are demonstrated. Thermally stable scandium tritide thin films with a surface activity of 15mCi/cm2 were used as the beta particle source. The electrical field created by the work function difference between the ScT film and a platinum or copper electrode was used to separate the beta-generated electrical charge carriers. Open circuit voltages of 0.5 and 0.16V and short circuit current densities of 2.7 and 5.3nA/cm2 were achieved for gaseous and solid dielectric media-based CPD cells, respectively.

Demonstration of a 4H SiC betavoltaic cell

NASA Astrophysics Data System (ADS)

Chandrashekhar, M. V. S.; Thomas, Christopher I.; Li, Hui; Spencer, M. G.; Lal, Amit

2006-01-01

A betavoltaic cell in 4H SiC is demonstrated. A p-n diode structure was used to collect the charge from a 1mCi Ni-63 source. An open circuit voltage of 0.72V and a short circuit current density of 16.8nA /cm2 were measured in a single p-n junction. A 6% lower bound on the power conversion efficiency was obtained. A simple photovoltaic-type model was used to explain the results. Fill factor and backscattering effects were included in the efficiency calculation. The performance of the device was limited by edge recombination.

Extremely high frequency RF effects on electronics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Loubriel, Guillermo Manuel; Vigliano, David; Coleman, Phillip Dale

The objective of this work was to understand the fundamental physics of extremely high frequency RF effects on electronics. To accomplish this objective, we produced models, conducted simulations, and performed measurements to identify the mechanisms of effects as frequency increases into the millimeter-wave regime. Our purpose was to answer the questions, 'What are the tradeoffs between coupling, transmission losses, and device responses as frequency increases?', and, 'How high in frequency do effects on electronic systems continue to occur?' Using full wave electromagnetics codes and a transmission-line/circuit code, we investigated how extremely high-frequency RF propagates on wires and printed circuit boardmore » traces. We investigated both field-to-wire coupling and direct illumination of printed circuit boards to determine the significant mechanisms for inducing currents at device terminals. We measured coupling to wires and attenuation along wires for comparison to the simulations, looking at plane-wave coupling as it launches modes onto single and multiconductor structures. We simulated the response of discrete and integrated circuit semiconductor devices to those high-frequency currents and voltages, using SGFramework, the open-source General-purpose Semiconductor Simulator (gss), and Sandia's Charon semiconductor device physics codes. This report documents our findings.« less

Vibration energy harvester with sustainable power based on a single-crystal piezoelectric cantilever array.

PubMed

Kim, Moonkeun; Lee, Sang-Kyun; Ham, Yong-Hyun; Yang, Yil Suk; Kwon, Jong-Kee; Kwon, Kwang-Ho

2012-08-01

We designed and fabricated a bimorph cantilever array for sustainable power with an integrated Cu proof mass to obtain additional power and current. We fabricated a cantilever system using single-crystal piezoelectric material and compared the calculations for single and arrayed cantilevers to those obtained experimentally. The vibration energy harvester had resonant frequencies of 60.4 and 63.2 Hz for short and open circuits, respectively. The damping ratio and quality factor of the cantilever device were 0.012 and 41.66, respectively. The resonant frequency at maximum average power was 60.8 Hz. The current and highest average power of the harvester array were found to be 0.728 mA and 1.61 mW, respectively. The sustainable maximum power was obtained after slightly shifting the short-circuit frequency. In order to improve the current and power using an array of cantilevers, we also performed energy conversion experiments.

Options Studied for Managing Space Station Solar Array Electrical Hazards for Sequential Shunt Unit Replacement

NASA Technical Reports Server (NTRS)

Delleur, Ann M.; Kerslake, Thomas W.; Levy, Robert K.

2004-01-01

The U.S. solar array strings on the International Space Station are connected to a sequential shunt unit (SSU). The job of the SSU is to shunt, or short, the excess current from the solar array, such that just enough current is provided downstream to maintain the 160-V bus voltage while meeting the power load demand and recharging the batteries. Should an SSU fail on-orbit, it would be removed and replaced with the on-orbit spare during an astronaut space walk or extravehicular activity (EVA) (see the photograph). However, removing an SSU during an orbit Sun period with input solar array power connectors fully energized could result in substantial hardware damage and/or safety risk to the EVA astronaut. The open-circuit voltage of cold solar-array strings can exceed 320 V, and warm solar-array strings could feed a short circuit with a total current level exceeding 240 A.

Physical mechanisms for reduction of the breakdown voltage in the circuit of a rod lightning protector with an opening microswitch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bobrov, Yu. K.; Zhuravkov, I. V.; Ostapenko, E. I.

2010-12-15

The effect of air gap breakdown voltage reduction in the circuit with an opening microswitch is substantiated from the physical point of view. This effect can be used to increase the efficiency of lightning protection system with a rod lightning protector. The processes which take place in the electric circuit of a lightning protector with a microswitch during a voltage breakdown are investigated. Openings of the microswitch are shown to lead to resonance overvoltages in the dc circuit and, as a result, efficient reduction in the breakdown voltage in a lightning protector-thundercloud air gap.

Does an Open Recirculation Line Affect the Flow Rate and Pressure in a Neonatal Extracorporeal Life Support Circuit With a Centrifugal or Roller Pump?

PubMed

Wang, Shigang; Spencer, Shannon B; Woitas, Karl; Glass, Kristen; Kunselman, Allen R; Ündar, Akif

2017-01-01

The objective of this study is to evaluate the impact of an open or closed recirculation line on flow rate, circuit pressure, and hemodynamic energy transmission in simulated neonatal extracorporeal life support (ECLS) systems. The two neonatal ECLS circuits consisted of a Maquet HL20 roller pump (RP group) or a RotaFlow centrifugal pump (CP group), Quadrox-iD Pediatric oxygenator, and Biomedicus arterial and venous cannulae (8 Fr and 10 Fr) primed with lactated Ringer's solution and packed red blood cells (hematocrit 35%). Trials were conducted at flow rates ranging from 200 to 600 mL/min (200 mL/min increments) with a closed or open recirculation line at 36°C. Real-time pressure and flow data were recorded using a custom-based data acquisition system. In the RP group, the preoxygenator flow did not change when the recirculation line was open while the prearterial cannula flow decreased by 15.7-20.0% (P < 0.01). Circuit pressure, total circuit pressure drop, and hemodynamic energy delivered to patients also decreased (P < 0.01). In the CP group, the prearterial cannula flow did not change while preoxygenator flow increased by 13.6-18.8% (P < 0.01). Circuit pressure drop and hemodynamic energy transmission remained the same. The results showed that the shunt of an open recirculation line could decrease perfusion flow in patients in the ECLS circuit using a roller pump, but did not change perfusion flow in the circuit using a centrifugal pump. An additional flow sensor is needed to monitor perfusion flow in patients if any shunts exist in the ECLS circuit. © 2016 International Center for Artificial Organs and Transplantation and Wiley Periodicals, Inc.

Fabrication and characterization of anisotype heterojunctions n-TiN/p-CdTe

NASA Astrophysics Data System (ADS)

Solovan, M. M.; Brus, V. V.; Maryanchuk, P. D.; Ilashchuk, M. I.; Rappich, J.; Nickel, N.; Abashin, S. L.

2014-01-01

Photosensitive heterojunctions n-TiN/p-CdTe were fabricated for the first time by means of titanium nitride thin film deposition (n-type conductivity) by the reactive magnetron sputtering onto freshly etched single crystal substrates CdTe (1 1 0) of p-type conductivity. The temperature dependences of the height of the potential barrier and series resistance of the n-TiN/p-CdTe heterojunction were investigated. The dominating current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage Voc = 0.35 V, short-circuit current Isc = 1.88 mA см-2 and fill factor FF = 0.51 under illumination 80 mW сm-2.

Polypyrrole RVC biofuel cells for powering medical implants.

PubMed

Roxby, Daniel N; Ting, S R Simon; Nguyen, Hung T

2017-07-01

Batteries for implanted medical devices such as pacemakers typically require surgical replacement every 5 to 10 years causing stress to the patient and their families. A Biofuel cell uses two electrodes with enzymes embedded to convert sugar into electricity. To evaluate the power producing capabilities of biofuel cells to replace battery technology, polypyrrole electrodes were fabricated by compression with Glucose oxidase and Laccase. Vitreous carbon was added to increase the conductivity, whilst glutaraldehyde acted as a crosslinking molecule. A maximum open circuit potential of 558.7 mV, short circuit current of 1.09 mA and maximum power of 0.127 mW was obtained from the fuel cells. This was able to turn on a medical thermometer through a TI BQ25504 energy harvesting circuit, hence showing the powering potential for biomedical devices.

Circuit design advances for ultra-low power sensing platforms

NASA Astrophysics Data System (ADS)

Wieckowski, Michael; Dreslinski, Ronald G.; Mudge, Trevor; Blaauw, David; Sylvester, Dennis

2010-04-01

This paper explores the recent advances in circuit structures and design methodologies that have enabled ultra-low power sensing platforms and opened up a host of new applications. Central to this theme is the development of Near Threshold Computing (NTC) as a viable design space for low power sensing platforms. In this paradigm, the system's supply voltage is approximately equal to the threshold voltage of its transistors. Operating in this "near-threshold" region provides much of the energy savings previously demonstrated for subthreshold operation while offering more favorable performance and variability characteristics. This makes NTC applicable to a broad range of power-constrained computing segments including energy constrained sensing platforms. This paper explores the barriers to the adoption of NTC and describes current work aimed at overcoming these obstacles in the circuit design space.

High-voltage solar-cell chip

NASA Technical Reports Server (NTRS)

Kapoor, V. J.; Valco, G. J.; Skebe, G. G.; Evans, J. C., Jr.

1985-01-01

Integrated circuit technology has been successfully applied to the design and fabrication of 0.5 x 0.5-cm planar multijunction solar-cell chips. Each of these solar cells consisted of six voltage-generating unit cells monolithically connected in series and fabricated on a 75-micron-thick, p-type, single crystal, silicon substrate. A contact photolithic process employing five photomask levels together with a standard microelectronics batch-processing technique were used to construct the solar-cell chip. The open-circuit voltage increased rapidly with increasing illumination up to 5 AM1 suns where it began to saturate at the sum of the individual unit-cell voltages at a maximum of 3.0 V. A short-circuit current density per unit cell of 240 mA/sq cm was observed at 10 AM1 suns.

Are Soft Short Tests Good Indicators of Internal Li-ion Cell Defects?

NASA Technical Reports Server (NTRS)

Jeevarajan, J.; Chung, J.-S.; Jung, K.; Park, J.

2013-01-01

The self discharge test at full state of charge, may not be a good one to detect subtle defects since the li-ion chemistry has the highest self discharge at full state of charge. One should characterize self discharge versus storage time for each cell manufacturer/design to differentiate between normal self discharge and that due to a subtle manufacturing defect. The various soft short test methods indicate that if this test is carried out at full discharge (0% SOC) with all capacity removed (by lowering the current load in a stepwise manner to the same end of discharge voltage), then the cells need to be placed in storage for more than 72 hours to get a good analysis on the presence of subtle defects since it takes more than 72 hours to achieve voltage stabilization. If the cells are to be charged up even to a small percentage (ex. 1%), 72 hours are sufficient to determine issues. However, the pass/fail criteria should be based on a valid OCV decline. Less than 10 mV voltage decline is not a good method to detect subtle defects. As mentioned in the first bullet, self discharge is a competing reaction when a charge is introduced and hence a characterization of the self discharge versus storage time is required to fully correlate voltage decline to a failure due to a subtle defect. Soft short test method cannot be relied on for defect detection because cells with and without voltage decline seemed to have similar defects and characteristics. Screening methods such as internal resistance and capacity as well as a 3-sigma range for OCV, mass and dimensions should be used to screen out outliers. A very critical aspect in the understanding of subtle defects is to carry out destructive analysis of cells from every lot to confirm the quality of production and screen all cells and batteries in a stringent manner to have a high quality set of flight cells. Self Discharge Test: Fully charged cells shall be placed in Open circuit stand for 72 hours (OCV measurement twice a day); continue for total of 14 days with 1 reading per day 2. Soft Short Test 1: Fully charge; cells discharged to manufacturer's end of disch. Voltage (EODV) cutoff at C/5 rate; stand for 30 minutes; discharge with C/500 to the same EODV. stand for another 30 minutes; discharge the cells again using C/1000 current to the same EODV. OCV measurements twice a day for 72 hours and then for total of 14 days (data collection same as in 1.) 3. Soft Short Test 2: Fully charge; cells discharged to the manuf. EODV with a C/13 constant current; provide a 10 hour rest, discharge again to the same EODV with a current of C/250, provide a 10 hour rest, discharge again using a C/250 rate, provide a 24 hour rest, charge using C/250 to 3.15 V (for 12 hours). OCV measurements twice a day for at 72 hours. (data collection same as in 1.) 4. Soft Short Test 3: Fully charge; cells shall be discharged using C/10 current to manuf. EODV. Allow the cell to remain at Open circuit for 10 seconds. Discharge the cell at C/20 rate to the same EODV, hold open circuit for 24 hours. Discharge the cells at C/200 rate to the same end of voltage cutoff and hold open circuit for 24 hours. Discharge the cells one more time at C/200 rate to the same EODV and hold open circuit for 36 hours. Charge at C/200 rate to 3.15 V and hold for 3 days. Record OCV during the open circuit stand periods every 12 hours and at the beginning and end of the 3 day hold (include the 12 hour OCV recording during this time also). Capacity Cycling: Cells with declining voltages - one cell from each manufacturer chosen for cycling Destructive Physical Analysis (DPA): Cells with and without decline chosen from each lot for DPA.

Hybrid ZnO/phthalocyanine photovoltaic device with highly resistive ZnO intermediate layer.

PubMed

Izaki, Masanobu; Chizaki, Ryo; Saito, Takamasa; Murata, Kazufumi; Sasano, Junji; Shinagawa, Tsutomu

2013-10-09

We report a hybrid photovoltaic device composed of a 3.3 eV bandgap zinc oxide (ZnO) semiconductor and metal-free phthalocyanine layers and the effects of the insertion of the highly resistive ZnO buffer layer on the electrical characteristics of the rectification feature and photovoltaic performance. The hybrid photovoltaic devices have been constructed by electrodeposition of the 300 nm thick ZnO layer in a simple zinc nitrate aqueous solution followed by vacuum evaporation of 50-400 nm thick-phthalocyanine layers. The ZnO layers with the resistivity of 1.8 × 10(3) and 1 × 10(8) Ω cm were prepared by adjusting the cathodic current density and were installed into the hybrid photovoltaic devices as the n-type and buffer layer, respectively. The phthalocyanine layers with the characteristic monoclinic lattice showed a characteristic optical absorption feature regardless of the thickness, but the preferred orientation changed depending on the thickness. The ZnO buffer-free hybrid 50 nm thick phthalocyanine/n-ZnO photovoltaic device showed a rectification feature but possessed a poor photovoltaic performance with a conversion efficiency of 7.5 × 10(-7) %, open circuit voltage of 0.041 V, and short circuit current density of 8.0 × 10(-5) mA cm(-2). The insertion of the ZnO buffer layer between the n-ZnO and phthalocyanine layers induced improvements in both the rectification feature and photovoltaic performance. The excellent rectification feature with a rectification ratio of 3188 and ideally factor of 1.29 was obtained for the hybrid 200 nm thick phthalocyanine/ZnO buffer/n-ZnO photovoltaic device, and the hybrid photovoltaic device possessed an improved photovoltaic performance with the conversion efficiency of 0.0016%, open circuit voltage of 0.31 V, and short circuit current density of 0.015 mA cm(-2).

Low-high junction theory applied to solar cells

NASA Technical Reports Server (NTRS)

Godlewski, M. P.; Baraona, C. R.; Brandhorst, H. W., Jr.

1973-01-01

Recent use of alloying techniques for rear contact formation has yielded a new kind of silicon solar cell, the back surface field (BSF) cell, with abnormally high open circuit voltage and improved radiation resistance. Several analytical models for open circuit voltage based on the reverse saturation current are formulated to explain these observations. The zero SRV case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the low-high junction and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells. Detailed descriptions and derivations for the models are included. The correspondences between them are discussed. This modeling suggests that the meaning of minority carrier diffusion length measured in BSF cells be reexamined.

Operating Mechanisms of Mesoscopic Perovskite Solar Cells through Impedance Spectroscopy and J-V Modeling.

PubMed

Zarazúa, Isaac; Sidhik, Siraj; Lopéz-Luke, Tzarara; Esparza, Diego; De la Rosa, Elder; Reyes-Gomez, Juan; Mora-Seró, Iván; Garcia-Belmonte, Germà

2017-12-21

The performance of perovskite solar cell (PSC) is highly sensitive to deposition conditions, the substrate, humidity, and the efficiency of solvent extraction. However, the physical mechanism involved in the observed changes of efficiency with different deposition conditions has not been elucidated yet. In this work, PSCs were fabricated by the antisolvent deposition (AD) and recently proposed air-extraction antisolvent (AAD) process. Impedance analysis and J-V curve fitting were used to analyze the photogeneration, charge transportation, recombination, and leakage properties of PSCs. It can be elucidated that the improvement in morphology of perovskite film promoted by AAD method leads to increase in light absorption, reduction in recombination sites, and interstitial defects, thus enhancing the short-circuit current density, open-circuit voltage, and fill factor. This study will open up doors for further improvement of device and help in understanding its physical mechanism and its relation to the deposition methods.

Hole-transport material variation in fully vacuum deposited perovskite solar cells

NASA Astrophysics Data System (ADS)

Polander, Lauren E.; Pahner, Paul; Schwarze, Martin; Saalfrank, Matthias; Koerner, Christian; Leo, Karl

2014-08-01

This work addresses the effect of energy level alignment between the hole-transporting material and the active layer in vacuum deposited, planar-heterojunction CH3NH3PbIx-3Clx perovskite solar cells. Through a series of hole-transport materials, with conductivity values set using controlled p-doping of the layer, we correlate their ionization potentials with the open-circuit voltage of the device. With ionization potentials beyond 5.3 eV, a substantial decrease in both current density and voltage is observed, which highlights the delicate energetic balance between driving force for hole-extraction and maximizing the photovoltage. In contrast, when an optimal ionization potential match is found, the open-circuit voltage can be maximized, leading to power conversion efficiencies of up to 10.9%. These values are obtained with hole-transport materials that differ from the commonly used Spiro-MeO-TAD and correspond to a 40% performance increase versus this reference.

Ion-damage-free planarization or shallow angle sectioning of solar cells for mapping grain orientation and nanoscale photovoltaic properties

DOE PAGES

Kutes, Yasemin; Luria, Justin; Sun, Yu; ...

2017-04-11

Ion beam milling is the most common modern method for preparing specific features for microscopic analysis, even though concomitant ion implantation and amorphization remain persistent challenges, particularly as they often modify materials properties of interest. Atomic force microscopy (AFM), on the other hand, can mechanically mill specific nanoscale regions in plan-view without chemical or high energy ion damage, due to its resolution, directionality, and fine load control. As an example, AFM-nanomilling (AFM-NM) is implemented for top-down planarization of polycrystalline CdTe thin film solar cells, with a resulting decrease in the root mean square (RMS) roughness by an order of magnitude,more » even better than for a low incidence FIB polished surface. Subsequently AFM-based property maps reveal a substantially stronger contrast, in this case of the short-circuit current or open circuit voltage during light exposure. Furthermore, electron back scattering diffraction (EBSD) imaging also becomes possible upon AFM-NM, enabling direct correlations between the local materials properties and the polycrystalline microstructure. Smooth shallow-angle cross-sections are demonstrated as well, based on targeted oblique milling. As expected, this reveals a gradual decrease in the average short-circuit current and maximum power as the underlying CdS and electrode layers are approached, but a relatively consistent open-circuit voltage through the diminishing thickness of the CdTe absorber. AFM-based nanomilling is therefore a powerful tool for material characterization, uniquely providing ion-damage free, selective area, planar smoothing or low-angle sectioning of specimens while preserving their functionality. This then enables novel, co-located advanced AFM measurements, EBSD analysis, and investigations by related techniques that are otherwise hindered by surface morphology or surface damage.« less

Tailored donor-acceptor polymers with an A-D1-A-D2 structure: controlling intermolecular interactions to enable enhanced polymer photovoltaic devices.

PubMed

Qin, Tianshi; Zajaczkowski, Wojciech; Pisula, Wojciech; Baumgarten, Martin; Chen, Ming; Gao, Mei; Wilson, Gerry; Easton, Christopher D; Müllen, Klaus; Watkins, Scott E

2014-04-23

Extensive efforts have been made to develop novel conjugated polymers that give improved performance in organic photovoltaic devices. The use of polymers based on alternating electron-donating and electron-accepting units not only allows the frontier molecular orbitals to be tuned to maximize the open-circuit voltage of the devices but also controls the optical band gap to increase the number of photons absorbed and thus modifies the other critical device parameter-the short circuit current. In fact, varying the nonchromophoric components of a polymer is often secondary to the efforts to adjust the intermolecular aggregates and improve the charge-carrier mobility. Here, we introduce an approach to polymer synthesis that facilitates simultaneous control over both the structural and electronic properties of the polymers. Through the use of a tailored multicomponent acceptor-donor-acceptor (A-D-A) intermediate, polymers with the unique structure A-D1-A-D2 can be prepared. This approach enables variations in the donor fragment substituents such that control over both the polymer regiochemistry and solubility is possible. This control results in improved intermolecular π-stacking interactions and therefore enhanced charge-carrier mobility. Solar cells using the A-D1-A-D2 structural polymer show short-circuit current densities that are twice that of the simple, random analogue while still maintaining an identical open-circuit voltage. The key finding of this work is that polymers with an A-D1-A-D2 structure offer significant performance benefits over both regioregular and random A-D polymers. The chemical synthesis approach that enables the preparation of A-D1-A-D2 polymers therefore represents a promising new route to materials for high-efficiency organic photovoltaic devices.

Ion-damage-free planarization or shallow angle sectioning of solar cells for mapping grain orientation and nanoscale photovoltaic properties

NASA Astrophysics Data System (ADS)

Kutes, Yasemin; Luria, Justin; Sun, Yu; Moore, Andrew; Aguirre, Brandon A.; Cruz-Campa, Jose L.; Aindow, Mark; Zubia, David; Huey, Bryan D.

2017-05-01

Ion beam milling is the most common modern method for preparing specific features for microscopic analysis, even though concomitant ion implantation and amorphization remain persistent challenges, particularly as they often modify materials properties of interest. Atomic force microscopy (AFM), on the other hand, can mechanically mill specific nanoscale regions in plan-view without chemical or high energy ion damage, due to its resolution, directionality, and fine load control. As an example, AFM-nanomilling (AFM-NM) is implemented for top-down planarization of polycrystalline CdTe thin film solar cells, with a resulting decrease in the root mean square (RMS) roughness by an order of magnitude, even better than for a low incidence FIB polished surface. Subsequent AFM-based property maps reveal a substantially stronger contrast, in this case of the short-circuit current or open circuit voltage during light exposure. Electron back scattering diffraction (EBSD) imaging also becomes possible upon AFM-NM, enabling direct correlations between the local materials properties and the polycrystalline microstructure. Smooth shallow-angle cross-sections are demonstrated as well, based on targeted oblique milling. As expected, this reveals a gradual decrease in the average short-circuit current and maximum power as the underlying CdS and electrode layers are approached, but a relatively consistent open-circuit voltage through the diminishing thickness of the CdTe absorber. AFM-based nanomilling is therefore a powerful tool for material characterization, uniquely providing ion-damage free, selective area, planar smoothing or low-angle sectioning of specimens while preserving their functionality. This enables novel, co-located advanced AFM measurements, EBSD analysis, and investigations by related techniques that are otherwise hindered by surface morphology or surface damage.

Light illumination intensity dependence of photovoltaic parameter in polymer solar cells with ammonium heptamolybdate as hole extraction layer.

PubMed

Liu, Zhiyong; Niu, Shengli; Wang, Ning

2018-01-01

A low-temperature, solution-processed molybdenum oxide (MoO X ) layer and a facile method for polymer solar cells (PSCs) is developed. The PSCs based on a MoO X layer as the hole extraction layer (HEL) is a significant advance for achieving higher photovoltaic performance, especially under weaker light illumination intensity. Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS) measurements show that the (NH 4 ) 6 Mo 7 O 24 molecule decomposes and forms the molybdenum oxide (MoO X ) molecule when undergoing thermal annealing treatment. In this study, PSCs with the MoO X layer as the HEL exhibited better photovoltaic performance, especially under weak light illumination intensity (from 100 to 10mWcm -2 ) compared to poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS)-based PSCs. Analysis of the current density-voltage (J-V) characteristics at various light intensities provides information on the different recombination mechanisms in the PSCs with a MoO X and PEDOT:PSS layer as the HEL. That the slopes of the open-circuit voltage (V OC ) versus light illumination intensity plots are close to 1 unity (kT/q) reveals that bimolecular recombination is the dominant and weaker monomolecular recombination mechanism in open-circuit conditions. That the slopes of the short-circuit current density (J SC ) versus light illumination intensity plots are close to 1 reveals that the effective charge carrier transport and collection mechanism of the MoO X /indium tin oxide (ITO) anode is the weaker bimolecular recombination in short-circuit conditions. Our results indicate that MoO X is an alternative candidate for high-performance PSCs, especially under weak light illumination intensity. Copyright © 2017 Elsevier Inc. All rights reserved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kutes, Yasemin; Luria, Justin; Sun, Yu

Ion beam milling is the most common modern method for preparing specific features for microscopic analysis, even though concomitant ion implantation and amorphization remain persistent challenges, particularly as they often modify materials properties of interest. Atomic force microscopy (AFM), on the other hand, can mechanically mill specific nanoscale regions in plan-view without chemical or high energy ion damage, due to its resolution, directionality, and fine load control. As an example, AFM-nanomilling (AFM-NM) is implemented for top-down planarization of polycrystalline CdTe thin film solar cells, with a resulting decrease in the root mean square (RMS) roughness by an order of magnitude,more » even better than for a low incidence FIB polished surface. Subsequently AFM-based property maps reveal a substantially stronger contrast, in this case of the short-circuit current or open circuit voltage during light exposure. Furthermore, electron back scattering diffraction (EBSD) imaging also becomes possible upon AFM-NM, enabling direct correlations between the local materials properties and the polycrystalline microstructure. Smooth shallow-angle cross-sections are demonstrated as well, based on targeted oblique milling. As expected, this reveals a gradual decrease in the average short-circuit current and maximum power as the underlying CdS and electrode layers are approached, but a relatively consistent open-circuit voltage through the diminishing thickness of the CdTe absorber. AFM-based nanomilling is therefore a powerful tool for material characterization, uniquely providing ion-damage free, selective area, planar smoothing or low-angle sectioning of specimens while preserving their functionality. This then enables novel, co-located advanced AFM measurements, EBSD analysis, and investigations by related techniques that are otherwise hindered by surface morphology or surface damage.« less

Efficacy of a Virtual Teaching Assistant in an Open Laboratory Environment for Electric Circuits

ERIC Educational Resources Information Center

Saleheen, Firdous; Wang, Zicong; Picone, Joseph; Butz, Brian P.; Won, Chang-Hee

2018-01-01

In order to provide an on-demand, open electrical engineering laboratory, we developed an innovative software-based Virtual Open Laboratory Teaching Assistant (VOLTA). This web-based virtual assistant provides laboratory instructions, equipment usage videos, circuit simulation assistance, and hardware implementation diagnostics. VOLTA allows…

Electrical transport characterization of PEDOT:PSS/n-Si Schottky diodes and their applications in solar cells.

PubMed

Khurelbaatar, Zagarzusem; Hyung, Jung-Hwan; Kim, Gil-Sung; Park, No-Won; Shim, Kyu-Hwan; Lee, Sang-Kwon

2014-06-01

We demonstrate locally contacted PEDOT:PSS Schottky diodes with excellent rectifying behavior, fabricated on n-type Si substrates using a spin-coating process and a reactive-ion etching process. Electrical transport characterizations of these Schottky diodes were investigated by both current-voltage (I-V) and capacitance-voltage (C-V) measurements. We found that these devices exhibit excellent modulation in the current with an on/off ratio of - 10(6). Schottky junction solar cells composed of PEDOT:PSS and n-Si structures were also examined. From the current density-voltage (J-V) measurement of a solar cell under illumination, the short circuit current (I(sc)), open circuit voltage (V(oc)), and conversion efficiency (eta) were - 19.7 mA/cm2, - 578.5 mV, and - 6.5%, respectively. The simple and low-cost fabrication process of the PEDOT:PSS/n-Si Schottky junctions makes them a promising candidate for further high performance solar cell applications.

COD removal characteristics in air-cathode microbial fuel cells.

PubMed

Zhang, Xiaoyuan; He, Weihua; Ren, Lijiao; Stager, Jennifer; Evans, Patrick J; Logan, Bruce E

2015-01-01

Exoelectrogenic microorganisms in microbial fuel cells (MFCs) compete with other microorganisms for substrate. In order to understand how this affects removal rates, current generation, and coulombic efficiencies (CEs), substrate removal rates were compared in MFCs fed a single, readily biodegradable compound (acetate) or domestic wastewater (WW). Removal rates based on initial test conditions fit first-order kinetics, but rate constants varied with circuit resistance. With filtered WW (100Ω), the rate constant was 0.18h(-)(1), which was higher than acetate or filtered WW with an open circuit (0.10h(-)(1)), but CEs were much lower (15-24%) than acetate. With raw WW (100Ω), COD removal proceeded in two stages: a fast removal stage with high current production, followed by a slower removal with little current. While using MFCs increased COD removal rate due to current generation, secondary processes will be needed to reduce COD to levels suitable for discharge. Copyright © 2014 Elsevier Ltd. All rights reserved.

Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology.

PubMed

Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

2015-12-03

This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm(2), and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p(+-)n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

Rectenna for high-voltage applications

NASA Technical Reports Server (NTRS)

Epp, Larry W. (Inventor); Khan, Abdur R. (Inventor)

2002-01-01

An energy transfer system is disclosed. The system includes patch elements, shielding layers, and energy rectifying circuits. The patch elements receive and couple radio frequency energy. The shielding layer includes at least one opening that allows radio frequency energy to pass through. The openings are formed and positioned to receive the radio frequency energy and to minimize any re-radiating back toward the source of energy. The energy rectifying circuit includes a circuit for rectifying the radio frequency energy into dc energy. A plurality of energy rectifying circuits is arranged in an array to provide a sum of dc energy generated by the energy rectifying circuit.

Hybrid integrated biological-solid-state system powered with adenosine triphosphate.

PubMed

Roseman, Jared M; Lin, Jianxun; Ramakrishnan, Siddharth; Rosenstein, Jacob K; Shepard, Kenneth L

2015-12-07

There is enormous potential in combining the capabilities of the biological and the solid state to create hybrid engineered systems. While there have been recent efforts to harness power from naturally occurring potentials in living systems in plants and animals to power complementary metal-oxide-semiconductor integrated circuits, here we report the first successful effort to isolate the energetics of an electrogenic ion pump in an engineered in vitro environment to power such an artificial system. An integrated circuit is powered by adenosine triphosphate through the action of Na(+)/K(+) adenosine triphosphatases in an integrated in vitro lipid bilayer membrane. The ion pumps (active in the membrane at numbers exceeding 2 × 10(6) mm(-2)) are able to sustain a short-circuit current of 32.6 pA mm(-2) and an open-circuit voltage of 78 mV, providing for a maximum power transfer of 1.27 pW mm(-2) from a single bilayer. Two series-stacked bilayers provide a voltage sufficient to operate an integrated circuit with a conversion efficiency of chemical to electrical energy of 14.9%.

Analogy for Drude's free electron model to promote students' understanding of electric circuits in lower secondary school

NASA Astrophysics Data System (ADS)

de Almeida, Maria José BM; Salvador, Andreia; Costa, Maria Margarida RR

2014-12-01

Aiming at a deep understanding of some basic concepts of electric circuits in lower secondary schools, this work introduces an analogy between the behavior of children playing in a school yard with a central lake, subject to different conditions, rules, and stimuli, and Drude's free electron model of metals. Using this analogy from the first school contacts with electric phenomena, one can promote students' understanding of concepts such as electric current, the role of generators, potential difference effects, energy transfer, open and closed circuits, resistances, and their combinations in series and parallel. One believes that through this analogy well-known previous misconceptions of young students about electric circuit behaviors can be overcome. Furthermore, students' understanding will enable them to predict, and justify with self-constructed arguments, the behavior of different elementary circuits. The students' predictions can be verified—as a challenge of self-produced understanding schemes—using laboratory experiments. At a preliminary stage, our previsions were confirmed through a pilot study with three classrooms of 9th level Portuguese students.

Color Coding of Circuit Quantities in Introductory Circuit Analysis Instruction

ERIC Educational Resources Information Center

Reisslein, Jana; Johnson, Amy M.; Reisslein, Martin

2015-01-01

Learning the analysis of electrical circuits represented by circuit diagrams is often challenging for novice students. An open research question in electrical circuit analysis instruction is whether color coding of the mathematical symbols (variables) that denote electrical quantities can improve circuit analysis learning. The present study…

Corrosion of dental alloys in artificial saliva with Streptococcus mutans.

PubMed

Lu, Chunhui; Zheng, Yuanli; Zhong, Qun

2017-01-01

A comparative study of the corrosion resistance of CoCr and NiCr alloys in artificial saliva (AS) containing tryptic soy broth (Solution 1) and Streptococcus mutans (S. mutans) species (Solution 2) was performed by electrochemical methods, including open circuit potential measurements, impedance spectroscopy, and potentiodynamic polarization. The adherence of S. mutans to the NiCr and CoCr alloy surfaces immersed in Solution 2 for 24 h was verified by scanning electron microscopy, while the results of electrochemical impedance spectroscopy confirmed the importance of biofilm formation for the corrosion process. The R(QR) equivalent circuit was successfully used to fit the data obtained for the AS mixture without S. mutans, while the R(Q(R(QR))) circuit was found to be more suitable for describing the biofilm properties after treatment with the AS containing S. mutans species. In addition, a negative shift of the open circuit potential with immersion time was observed for all samples regardless of the solution type. Both alloys exhibited higher charge transfer resistance after treatment with Solution 2, and lower corrosion current densities were detected for all samples in the presence of S. mutans. The obtained results suggest that the biofilm formation observed after 24 h of exposure to S. mutans bacteria might enhance the corrosion resistance of the studied samples by creating physical barriers that prevented oxygen interactions with the metal surfaces.

Absorption Characterization of Mn-Zr-Substituted La-Sr Hexaferrite Using Open-Circuit and Short-Circuit Approaches in 8.2-18 GHz Frequency Range

NASA Astrophysics Data System (ADS)

Narang, Sukhleen Bindra; Kaur, Pawandeep; Bahel, Shalini; Pubby, Kunal

2018-01-01

The present study reports on the microwave absorption characterization of Mn2+-Zr4+ substituted lanthanum strontium ferrites, Sr0.85La0.15(MnZr) x Fe12-2 x O19, where x = 0.0, 0.25, 0.50, 0.75 and 1.0 in the X- and Ku-band. The synthesized ferrites are characterized with regard to their electromagnetic properties such as complex permittivity ( {ɛ^' - jɛ^'' ) and complex permeability ( {μ^' - jμ^'' ) using vector network analysis in the 8.2-18 GHz frequency range. Real and imaginary parts of permittivity decrease with the increase in Mn-Zr concentration due to a reduction in electron hopping conduction and eddy current losses, respectively. Microwave permeability spectra are also affected by the doping. The amplitude of magnetic loss peak increases with the increase in doping except for the x = 1.0 composition. Two commonly used approaches, open-circuit and short-circuit, have been employed for the absorption analysis. The difference in the results of these two techniques is justified on the basis of the reflection mechanism. The presented experimental findings underline the potential of the synthesized compositions with Mn-Zr concentrations x = 0.25, 0.5 and 0.75 in the suppression of electromagnetic reflections and radar signatures.

Corrosion of dental alloys in artificial saliva with Streptococcus mutans

PubMed Central

Lu, Chunhui; Zheng, Yuanli; Zhong, Qun

2017-01-01

A comparative study of the corrosion resistance of CoCr and NiCr alloys in artificial saliva (AS) containing tryptic soy broth (Solution 1) and Streptococcus mutans (S. mutans) species (Solution 2) was performed by electrochemical methods, including open circuit potential measurements, impedance spectroscopy, and potentiodynamic polarization. The adherence of S. mutans to the NiCr and CoCr alloy surfaces immersed in Solution 2 for 24 h was verified by scanning electron microscopy, while the results of electrochemical impedance spectroscopy confirmed the importance of biofilm formation for the corrosion process. The R(QR) equivalent circuit was successfully used to fit the data obtained for the AS mixture without S. mutans, while the R(Q(R(QR))) circuit was found to be more suitable for describing the biofilm properties after treatment with the AS containing S. mutans species. In addition, a negative shift of the open circuit potential with immersion time was observed for all samples regardless of the solution type. Both alloys exhibited higher charge transfer resistance after treatment with Solution 2, and lower corrosion current densities were detected for all samples in the presence of S. mutans. The obtained results suggest that the biofilm formation observed after 24 h of exposure to S. mutans bacteria might enhance the corrosion resistance of the studied samples by creating physical barriers that prevented oxygen interactions with the metal surfaces. PMID:28350880

Staged depressurization system

DOEpatents

Schulz, T.L.

1993-11-02

A nuclear reactor having a reactor vessel disposed in a containment shell is depressurized in stages using depressurizer valves coupled in fluid communication with the coolant circuit. At least one sparger submerged in the in-containment refueling water storage tank which can be drained into the containment sump communicates between one or more of the valves and an inside of the containment shell. The depressurizer valves are opened in stages, preferably at progressively lower coolant levels and for opening progressively larger flowpaths to effect depressurization through a number of the valves in parallel. The valves can be associated with a pressurizer tank in the containment shell, coupled to a coolant outlet of the reactor. At least one depressurization valve stage openable at a lowest pressure is coupled directly between the coolant circuit and the containment shell. The reactor is disposed in the open sump in the containment shell, and a further valve couples the open sump to a conduit coupling the refueling water storage tank to the coolant circuit for adding water to the coolant circuit, whereby water in the containment shell can be added to the reactor from the open sump. 4 figures.

Staged depressurization system

DOEpatents

Schulz, Terry L.

1993-01-01

A nuclear reactor having a reactor vessel disposed in a containment shell is depressurized in stages using depressurizer valves coupled in fluid communication with the coolant circuit. At least one sparger submerged in the in-containment refueling water storage tank which can be drained into the containment sump communicates between one or more of the valves and an inside of the containment shell. The depressurizer valves are opened in stages, preferably at progressively lower coolant levels and for opening progressively larger flowpaths to effect depressurization through a number of the valves in parallel. The valves can be associated with a pressurizer tank in the containment shell, coupled to a coolant outlet of the reactor. At least one depressurization valve stage openable at a lowest pressure is coupled directly between the coolant circuit and the containment shell. The reactor is disposed in the open sump in the containment shell, and a further valve couples the open sump to a conduit coupling the refueling water storage tank to the coolant circuit for adding water to the coolant circuit, whereby water in the containment shell can be added to the reactor from the open sump.

The ac power line protection for an IEEE 587 Class B environment

NASA Technical Reports Server (NTRS)

Roehr, W. D.; Clark, O. M.

1984-01-01

The 587B series of protectors are unique, low clamping voltage transient suppressors to protect ac-powered equipment from the 6000V peak open-circuit voltage and 3000A short circuit current as defined in IEEE standard 587 for Category B transients. The devices, which incorporate multiple-stage solid-state protector components, were specifically designed to operate under multiple exposures to maximum threat levels in this severe environment. The output voltage peaks are limited to 350V under maximum threat conditions for a 120V ac power line, thus providing adequate protection to vulnerable electronic equipment. The principle of operation and test performance data is discussed.

Partially filled intermediate band of Cr-doped GaN films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sonoda, S.

2012-05-14

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Low-light divergence in photovoltaic parameter fluctuations

NASA Astrophysics Data System (ADS)

Shvydka, Diana; Karpov, V. G.; Compaan, A. D.

2003-03-01

We study statistics of the major photovoltaic (PV) parameters, such as open-circuit voltage, short-circuit current, etc., versus light intensity on a set of nominally identical thin-film CdTe/CdS solar cells. A crossover light intensity is found, below which the relative fluctuations of the PV parameters diverge inversely proportional to the square root of the light intensity. We propose a model in which the observed fluctuations are due to lateral nonuniformities in the device structure. The crossover is attributed to the lateral nonuniformity screening length exceeding the device size. From the practical standpoint, our study introduces a simple uniformity diagnostic technique.

A Silicon Nanocrystal Schottky Junction Solar Cell produced from Colloidal Silicon Nanocrystals

PubMed Central

2010-01-01

Solution-processed semiconductors are seen as a promising route to reducing the cost of the photovoltaic device manufacture. We are reporting a single-layer Schottky photovoltaic device that was fabricated by spin-coating intrinsic silicon nanocrystals (Si NCs) from colloidal suspension. The thin-film formation process was based on Si NCs without any ligand attachment, exchange, or removal reactions. The Schottky junction device showed a photovoltaic response with a power conversion efficiency of 0.02%, a fill factor of 0.26, short circuit-current density of 0.148 mA/cm2, and open-circuit voltage of 0.51 V. PMID:20676200

Influence of niobium doping in hierarchically organized titania nanostructure on performance of dye-sensitized solar cells.

PubMed

Park, Jong Hoon; Noh, Jun Hong; Han, Byung Suh; Shin, Seong Sik; Park, Ik Jae; Kim, Dong Hoe; Hong, Kug Sun

2012-06-01

Niobium doped hierarchically organized TiO2 nanostructures composed of 20 nm size anatase nanocrystals were synthesized using pulsed laser deposition (PLD). The Nb doping concentration could be facilely controlled by adjusting the concentration of Nb in target materials. We could investigate the influence of Nb doping in the TiO2 photoelectrode on the cell performance of dye-sensitized solar cells (DSSCs) by the exclusion of morphological effects using the prepared Nb-doped TiO2 anostructures. We found no significant change in short circuit current density (Jsc) as a function of Nb doping concentration. However, open circuit voltage (Voc) and fill factor (FF) monotonously decrease with increasing Nb concentration. Dark current characteristics of the DSSCs reveal that the decrease in Voc and FF is attributed to the decrease in shunt resistance due to the increase in conductivity TiO2 by Nb doping. However, electrochemical impedance spectra (EIS) analysis at open circuit condition under illumination showed that the resistance at the TiO2/dye/electrolyte interface increases with Nb concentration, revealing that Nb doping suppress the charge recombination at the interface. In addition, electron life time obtained using characteristic frequency in Bode plot increases from 14 msec to 56 msec with increasing Nb concentration from 0 to 1.2 at%. This implies that the improved light harvesting can be achieved by increasing diffusion length through Nb-doping in the conventional TiO2 photoelectrode.

The importance of band tail recombination on current collection and open-circuit voltage in CZTSSe solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moore, James E.; Purdue University, West Lafayette, Indiana 47907; Hages, Charles J.

2016-07-11

Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) solar cells typically exhibit high short-circuit current density (J{sub sc}), but have reduced cell efficiencies relative to other thin film technologies due to a deficit in the open-circuit voltage (V{sub oc}), which prevent these devices from becoming commercially competitive. Recent research has attributed the low V{sub oc} in CZTSSe devices to small scale disorder that creates band tail states within the absorber band gap, but the physical processes responsible for this V{sub oc} reduction have not been elucidated. In this paper, we show that carrier recombination through non-mobile band tail states has a strong voltage dependencemore » and is a significant performance-limiting factor, and including these effects in simulation allows us to simultaneously explain the V{sub oc} deficit, reduced fill factor, and voltage-dependent quantum efficiency with a self-consistent set of material parameters. Comparisons of numerical simulations to measured data show that reasonable values for the band tail parameters (characteristic energy, capture rate) can account for the observed low V{sub oc}, high J{sub sc}, and voltage dependent collection efficiency. These results provide additional evidence that the presence of band tail states accounts for the low efficiencies of CZTSSe solar cells and further demonstrates that recombination through non-mobile band tail states is the dominant efficiency limiting mechanism.« less

Study of the back recombination processes of PbS quantum dots sensitized solar cells

NASA Astrophysics Data System (ADS)

Badawi, Ali; Al-Hosiny, N.; Merazga, Amar; Albaradi, Ateyyah M.; Abdallah, S.; Talaat, H.

2016-12-01

In this study, the back recombination processes of PbS quantum dots sensitized solar cells (QDSSCs) has been investigated. PbS QDs were adsorbed onto titania electrodes to act the role of sensitizers using successive ionic layer adsorption and reaction (SILAR) technique. The energy band gaps of the synthesized PbS QDs/titania are ranged from 1.64 eV (corresponding to 756 nm) to 3.12 eV (397 nm) matching the whole visible solar spectrum. The hyperbolic band model (HBM) was used to calculate PbS QDs size and it ranges from 1.76 to 3.44 nm. The photovoltaic parameters (open circuit voltage Voc, short circuit current density Jsc, fill factor FF and efficiency η) of the assembled PbS QDs sensitized solar cells (QDSSCs) were determined under a solar illumination of 100 mW/cm2 (AM 1.5 conditions). The open circuit voltage-decay (OCVD) rates of the assembled PbS QDSSCs were measured. The time constant (τ) for PbS QDSSCs (4 SILAR cycles) shows one order of magnitude larger than that of PbS QDSSCs (8 SILAR cycles) as a result of a decreased electron-hole back recombination.

Correlation between Photoluminescence and Carrier Transport and a Simple In Situ Passivation Method for High-Bandgap Hybrid Perovskites

DOE PAGES

Stoddard, Ryan J.; Eickemeyer, Felix T.; Katahara, John K.; ...

2017-06-21

High-bandgap mixed-halide hybrid perovskites have higher open-circuit voltage deficits and lower carrier diffusion lengths than their lower-bandgap counterparts. We have developed a ligand-assisted crystallization (LAC) technique that introduces additives in situ during the solvent wash and developed a new method to dynamically measure the absolute intensity steady-state photoluminescence and the mean carrier diffusion length simultaneously. The measurements reveal four distinct regimes of material changes and show that photoluminescence brightening often coincides with losses in carrier transport, such as in degradation or phase segregation. Further, the measurements enabled optimization of LAC on the 1.75 eV bandgap FA 0.83Cs 0.17Pb(I 0.66Br 0.34)more » 3, resulting in an enhancement of the photoluminescence quantum yield (PLQY) of over an order of magnitude, an increase of 80 meV in the quasi-Fermi level splitting (to 1.29 eV), an increase in diffusion length by a factor of 3.5 (to over 1 μm), and enhanced open-circuit voltage and short-circuit current from photovoltaics fabricated from the LAC-treated films.« less

Correlation between Photoluminescence and Carrier Transport and a Simple In Situ Passivation Method for High-Bandgap Hybrid Perovskites.

PubMed

Stoddard, Ryan J; Eickemeyer, Felix T; Katahara, John K; Hillhouse, Hugh W

2017-07-20

High-bandgap mixed-halide hybrid perovskites have higher open-circuit voltage deficits and lower carrier diffusion lengths than their lower-bandgap counterparts. We have developed a ligand-assisted crystallization (LAC) technique that introduces additives in situ during the solvent wash and developed a new method to dynamically measure the absolute intensity steady-state photoluminescence and the mean carrier diffusion length simultaneously. The measurements reveal four distinct regimes of material changes and show that photoluminescence brightening often coincides with losses in carrier transport, such as in degradation or phase segregation. Further, the measurements enabled optimization of LAC on the 1.75 eV bandgap FA 0.83 Cs 0.17 Pb(I 0.66 Br 0.34 ) 3 , resulting in an enhancement of the photoluminescence quantum yield (PLQY) of over an order of magnitude, an increase of 80 meV in the quasi-Fermi level splitting (to 1.29 eV), an increase in diffusion length by a factor of 3.5 (to over 1 μm), and enhanced open-circuit voltage and short-circuit current from photovoltaics fabricated from the LAC-treated films.

Tungsten doped titanium dioxide nanowires for high efficiency dye-sensitized solar cells.

PubMed

Archana, P S; Gupta, Arunava; Yusoff, Mashitah M; Jose, Rajan

2014-04-28

Metal oxide semiconductors offering simultaneously high specific surface area and high electron mobility are actively sought for fabricating high performance nanoelectronic devices. The present study deals with synthesis of tungsten doped TiO2 (W:TiO2) nanowires (diameter ∼50 nm) by electrospinning and evaluation of their performance in dye-sensitized solar cells (DSCs). Similarity in the ionic radii between W(6+) and Ti(4+) and availability of two free electrons per dopant are the rationale for the present study. Materials were characterized by X-ray diffraction, scanning and transmission electron microscopy, X-ray fluorescence measurements, and absorption spectroscopy. Nanowires containing 2 at% W:TiO2 gave 90% higher short circuit current density (JSC) (∼15.39 mA cm(-2)) in DSCs with a nominal increase in the open circuit voltage compared with that of the undoped analogue (JSC ∼8.1 mA cm(-2)). The results are validated by multiple techniques employing absorption spectroscopy, electrochemical impedance spectroscopy and open circuit voltage decay. The above studies show that the observed increments resulted from increased dye-loading, electron density, and electron lifetime in tungsten doped samples.

Crystalline orientation dependent photoresponse and heterogeneous behaviors of grain boundaries in perovskite solar cells

NASA Astrophysics Data System (ADS)

Jiang, Chuanpeng; Zhang, Pengpeng

2018-02-01

Using photoconductive atomic force microscopy and Kelvin probe force microscopy, we characterize the local electrical properties of grains and grain boundaries of organic-inorganic hybrid perovskite (CH3NH3PbI3) thin films on top of a poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate (PEDOT:PSS)/ITO substrate. Three discrete photoconductivity levels are identified among perovskite grains, likely corresponding to the crystal orientation of each grain. Local J-V curves recorded on these grains further suggest an anti-correlation behavior between the short circuit current (JSC) and open circuit voltage (VOC). This phenomenon can be attributed to diffusion-limited surface recombination at the non-selective perovskite-tip contact, where a higher carrier mobility established in the perovskite grain results in an enhanced surface recombination and thus a lower VOC. In addition, the photoresponse of perovskite films displays a pronounced heterogeneity across the grain boundaries, with the boundaries formed between grains of the same photoconductivity level displaying even enhanced photocurrent and open circuit voltage compared to those of the adjacent grain interiors. These observations highlight the significance of controlling the microstructure of perovskite thin films, which will be a necessary route for further improving the efficiency of perovskite solar cells.

Multiconductor Short/Open Cable Tester

NASA Technical Reports Server (NTRS)

Eichenberg, Dennis

1994-01-01

Frequent or regular testing of multiconductor cables terminated in multipin conductors tedious, if not impossible, task. This inexpensive circuit simplifies open/short testing and is amenable to automation. In operation, pair of connectors selected to match pair of connectors installed on each of cables to be tested. As many connectors accommodated as required, and each can have as many conductors as required. Testing technique implemented with this circuit automated easily with electronic controls and computer interface. Printout provides status of each conductor in cable, indicating which, if any, of conductors has open or short circuit.

A Study of a Mulilayer BPF with Attenuation Poles by Using Folded Resonators with Open-Circuited End

NASA Astrophysics Data System (ADS)

Kasamai, Masashi; Usie, Masahiko; Wada, Kouji

We propose a multilayer bandpass filter(BPF) with attenuation poles using folded resonators with open-circuited end. Firstly, the basic characteristics of a folded resonator with open-circuited end under the change of the parameters is examined by an electromagnetic simulator. Secondly, 3-pole multilayer BPFs using the resonators above are proposed, simulated and experimented. As a result, the bandpass characteristics with attenuation poles near the lower and higher side of the center frequency is realized by the proposed structure.

Structural, electrical, and photoelectric properties of p-NiO/n-CdTe heterojunctions

NASA Astrophysics Data System (ADS)

Parkhomenko, Hryhorii; Solovan, Mykhaylo; Brus, Viktor; Maystruk, Eduard; Maryanchuk, Pavlo

2018-01-01

p-NiO/n-CdTe-photosensitive heterojunctions were prepared by the deposition of nickel oxide thin films onto n-type single-crystal CdTe substrates by DC reactive magnetron sputtering. The analysis of capacitance-voltage (C-V) characteristics, measured at different frequencies of the small amplitude AC signal and corrected by the effect of the series resistance, provided evidence of the presence of electrically charged interface states, which significantly affect the measured capacitance. The dominant current transport mechanisms in the heterojunctions were determined at forward and reverse biases. Using "light" I-V characteristics, we determined the open-circuit voltage Voc=0.42 V, the short-circuit current Isc=57.5 μA/cm2, and the fill factor FF=0.24 under white light illumination with the intensity of 80 mW.

Thin-film cadmium telluride photovoltaic cells

NASA Astrophysics Data System (ADS)

Compaan, A. D.; Bohn, R. G.

1994-09-01

This report describes work to develop and optimize radio-frequency (RF) sputtering for the deposition of thin films of cadmium telluride (CdTe) and related semiconductors for thin-film solar cells. Pulsed laser physical vapor deposition was also used for exploratory work on these materials, especially where alloying or doping are involved, and for the deposition of cadmium chloride layers. The sputtering work utilized a 2-in diameter planar magnetron sputter gun. The film growth rate by RF sputtering was studied as a function of substrate temperature, gas pressure, and RF power. Complete solar cells were fabricated on tin-oxide-coated soda-lime glass substrates. Currently, work is being done to improve the open-circuit voltage by varying the CdTe-based absorber layer, and to improve the short-circuit current by modifying the CdS window layer.

49 CFR 236.731 - Controller, circuit.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 4 2010-10-01 2010-10-01 false Controller, circuit. 236.731 Section 236.731 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION... Controller, circuit. A device for opening and closing electric circuits. ...

Composition-graded nanowire solar cells fabricated in a single process for spectrum-splitting photovoltaic systems.

PubMed

Caselli, Derek; Liu, Zhicheng; Shelhammer, David; Ning, Cun-Zheng

2014-10-08

Nanomaterials such as semiconductor nanowires have unique features that could enable novel optoelectronic applications such as novel solar cells. This paper aims to demonstrate one such recently proposed concept: Monolithically Integrated Laterally Arrayed Multiple Band gap (MILAMB) solar cells for spectrum-splitting photovoltaic systems. Two cells with different band gaps were fabricated simultaneously in the same process on a single substrate using spatially composition-graded CdSSe alloy nanowires grown by the Dual-Gradient Method in a chemical vapor deposition system. CdSSe nanowire ensemble devices tested under 1 sun AM1.5G illumination achieved open-circuit voltages up to 307 and 173 mV and short-circuit current densities as high as 0.091 and 0.974 mA/cm(2) for the CdS- and CdSe-rich cells, respectively. The open-circuit voltages were roughly three times those of similar CdSSe film cells fabricated for comparison due to the superior optical quality of the nanowires. I-V measurements were also performed using optical filters to simulate spectrum-splitting. The open-circuit voltages and fill factors of the CdS-rich subcells were uniformly larger than the corresponding CdSe-rich cells for similar photon flux, as expected. This suggests that if all wires can be contacted, the wide-gap cell is expected to have greater output power than the narrow-gap cell, which is the key to achieving high efficiencies with spectrum-splitting. This paper thus provides the first proof-of-concept demonstration of simultaneous fabrication of MILAMB solar cells. This approach to solar cell fabrication using single-crystal nanowires for spectrum-splitting photovoltaics could provide a future low-cost high-efficiency alternative to the conventional high-cost high-efficiency tandem cells.

Electrochemical Studies of Passive Film Formation and Corrosion of Friction Stir Processed Nickel Aluminum Bronze

DTIC Science & Technology

2011-06-01

between the working and reference electrodes in the cell due to the electrolyte and is calculated using equation 19 where ρ is the solution resistivity, l...the electrode and is given by equation 20 where, I is the measured cell current, Icorr is the corrosion current, Eoc is the open circuit potential...signals are applied, making Icorr related to RP , where RP is the polarization resistance as given in Equation 21 [16]. (21) The

A 0.2 V Micro-Electromechanical Switch Enabled by a Phase Transition.

PubMed

Dong, Kaichen; Choe, Hwan Sung; Wang, Xi; Liu, Huili; Saha, Bivas; Ko, Changhyun; Deng, Yang; Tom, Kyle B; Lou, Shuai; Wang, Letian; Grigoropoulos, Costas P; You, Zheng; Yao, Jie; Wu, Junqiao

2018-04-01

Micro-electromechanical (MEM) switches, with advantages such as quasi-zero leakage current, emerge as attractive candidates for overcoming the physical limits of complementary metal-oxide semiconductor (CMOS) devices. To practically integrate MEM switches into CMOS circuits, two major challenges must be addressed: sub 1 V operating voltage to match the voltage levels in current circuit systems and being able to deliver at least millions of operating cycles. However, existing sub 1 V mechanical switches are mostly subject to significant body bias and/or limited lifetimes, thus failing to meet both limitations simultaneously. Here 0.2 V MEM switching devices with ≳10 6 safe operating cycles in ambient air are reported, which achieve the lowest operating voltage in mechanical switches without body bias reported to date. The ultralow operating voltage is mainly enabled by the abrupt phase transition of nanolayered vanadium dioxide (VO 2 ) slightly above room temperature. The phase-transition MEM switches open possibilities for sub 1 V hybrid integrated devices/circuits/systems, as well as ultralow power consumption sensors for Internet of Things applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Comparison of chitosan and chitosan nanoparticles on the performance and charge recombination of water-based gel electrolyte in dye sensitized solar cells.

PubMed

Khalili, Malihe; Abedi, Mohammad; Amoli, Hossein Salar; Mozaffari, Seyed Ahmad

2017-11-01

In commercialization of liquid dye-sensitized solar cells (DSSCs), whose leakage, evaporation and toxicity of organic solvents are limiting factors, replacement of organic solvents with water-based gel electrolyte is recommended. This work reports on utilizing and comparison of chitosan and chitosan nanoparticle as different gelling agents in preparation of water-based gel electrolyte in fabrication of dye sensitized solar cells. All photovoltaic parameters such as open circuit voltage (V oc ), fill factor (FF), short circuit current density (J sc ) and conversion efficiency (η) were measured. For further characterization, electrochemical impedance spectroscopy (EIS) was used to study the charge transfer at Pt/electrolyte interface and charge recombination and electron transport at TiO 2 /dye/electrolyte interface. Significant improvements in conversion efficiency and short circuit current density of DSSCs fabricated by chitosan nanoparticle were observed that can be attributed to the higher mobility of I 3 - due to the lower viscosity and smaller size of chitosan nanoparticles. Copyright © 2017 Elsevier Ltd. All rights reserved.

Emerging materials for solar cell applications: Electrodeposited CdTe

NASA Astrophysics Data System (ADS)

Rod, R. L.; Basol, B. M.; Stafsudd, O.

1980-09-01

Work was centered about improving electroplating processes and cell fabrication techniques, with emphasis being given to three differing n-CdTe/Au Schottky configurations. The highest values of efficiency related parameters achieved with a simulated solar irradiation of 100 mW/sq cm were 0.57V for open circuit voltage, 0.6 for fill factor, and 6 mA/sq cm for short circuit current. Four important parameters are known to control the quality of the Monosolar electrodeposition process and resultant solar cells. They are electrolyte temperature, Te concentration in the solution at a specific pH, deposition or quasi-rest potential, and flow pattern of the electrolyte (stirring). The first three considerations are believed to be fully understood and optimized. Work is underway to further understand the effects of stirring on the diffusion of ionic components and the effects on CdTe film performance. Work was accelerated during the quarter to increase the short circuit current. Parallel programs using laser irradiation of finished CdTe films, heat treatment, and changes in the electrodeposition process itself to recrystallize films were started.

The 20 kilovolt rocket borne electron accelerator. [equipment specifications

NASA Technical Reports Server (NTRS)

Harrison, R.

1973-01-01

The accelerator system is a preprogrammed multi-voltage system capable of operating at a current level of 1/2 ampere at the 20 kilovolt level. The five major functional areas which comprise this system are: (1) Silver zinc battery packs; (2) the electron gun assembly; (3) gun control and opening circuits; (4) the telemetry conditioning section; and (5) the power conversion section.

Electricity. Physical Science in Action[TM]. Schlessinger Science Library. [Videotape].

ERIC Educational Resources Information Center

2000

Most people know that the flip of a switch will power up toys, appliances and lights with electricity and enable them to work. But why? What is it about electricity that makes it so powerful and so dangerous? Students will learn the basic concepts of positive and negative charges, current flow and open/closed circuits, and discover why getting a…

Investigation of the open-circuit voltage in wide-bandgap InGaP-host InP quantum dot intermediate-band solar cells

NASA Astrophysics Data System (ADS)

Aihara, Taketo; Tayagaki, Takeshi; Nagato, Yuki; Okano, Yoshinobu; Sugaya, Takeyoshi

2018-04-01

To analyze the open-circuit voltage (V oc) in intermediate-band solar cells, we investigated the current-voltage characteristics in wide-bandgap InGaP-based InP quantum dot (QD) solar cells. From the temperature dependence of the current-voltage curves, we show that the V oc in InP QD solar cells increases with decreasing temperature. We use a simple diode model to extract V oc at the zero-temperature limit, V 0, and the temperature coefficient C of the solar cells. Our results show that, while the C of InP QD solar cells is slightly larger than that of the reference InGaP solar cells, V 0 significantly decreases and coincides with the bandgap energy of the InP QDs rather than that of the InGaP host. This V 0 indicates that the V oc reduction in the InP QD solar cells is primarily caused by the breaking of the Fermi energy separation between the QDs and the host semiconductor in intermediate-band solar cells, rather than by enhanced carrier recombination.

The role of lipopolysaccharide on the electrochemical behavior of titanium.

PubMed

Barão, V A; Mathew, M T; Assunção, W G; Yuan, J C; Wimmer, M A; Sukotjo, C

2011-05-01

Lipopolysaccharide (LPS) may induce peri-implantitis and implant failure. However, the role of LPS in titanium (Ti) electrochemical behavior remains unknown. We hypothesized that LPS in saliva with different pHs affects Ti corrosion properties. Thirty-six Ti discs (15 mm × 3 mm) were divided into 12 groups according to saliva pH (3, 6.5, and 9) and Escherichia coli LPS concentration (0, 0.15, 15, and 150 µg/mL). Electrochemical tests, such as open circuit potential, potentiodynamic, and electrochemical impedance spectroscopy, were conducted in a controlled environment. Data were evaluated by Pearson correlation and regression analysis (α = 0.05). LPS and pH affected Ti corrosive behavior. In general, lower pH and higher LPS concentration accelerated Ti corrosion. In the control group, the increase of pH significantly reduced the corrosion rate and increased the capacitance of the double layer. In LPS groups, the decrease of pH significantly increased the corrosion rate of Ti. LPS negatively influenced Ti corrosion behavior. C(dl), capacitance of double layer; E(corr), corrosion potential; EIS, electrochemical impedance spectroscopy; I(corr), corrosion current density; I(pass), passivation current density; LPS, lipopolysaccharide; OCP, open circuit potential; R(p), polarization resistance; Ti, titanium.

Thermocouple-Signal-Conditioning Circuit

NASA Technical Reports Server (NTRS)

Simon, Richard A.

1991-01-01

Thermocouple-signal-conditioning circuit acting in conjunction with thermocouple, exhibits electrical behavior of voltage in series with resistance. Combination part of input bridge circuit of controller. Circuit configured for either of two specific applications by selection of alternative resistances and supply voltages. Includes alarm circuit detecting open circuit in thermocouple and provides off-scale output to signal malfunctions.

Symmetry-breaking charge transfer in a zinc chlorodipyrrin acceptor for high open circuit voltage organic photovoltaics.

PubMed

Bartynski, Andrew N; Gruber, Mark; Das, Saptaparna; Rangan, Sylvie; Mollinger, Sonya; Trinh, Cong; Bradforth, Stephen E; Vandewal, Koen; Salleo, Alberto; Bartynski, Robert A; Bruetting, Wolfgang; Thompson, Mark E

2015-04-29

Low open-circuit voltages significantly limit the power conversion efficiency of organic photovoltaic devices. Typical strategies to enhance the open-circuit voltage involve tuning the HOMO and LUMO positions of the donor (D) and acceptor (A), respectively, to increase the interfacial energy gap or to tailor the donor or acceptor structure at the D/A interface. Here, we present an alternative approach to improve the open-circuit voltage through the use of a zinc chlorodipyrrin, ZCl [bis(dodecachloro-5-mesityldipyrrinato)zinc], as an acceptor, which undergoes symmetry-breaking charge transfer (CT) at the donor/acceptor interface. DBP/ZCl cells exhibit open-circuit voltages of 1.33 V compared to 0.88 V for analogous tetraphenyldibenzoperyflanthrene (DBP)/C60-based devices. Charge transfer state energies measured by Fourier-transform photocurrent spectroscopy and electroluminescence show that C60 forms a CT state of 1.45 ± 0.05 eV in a DBP/C60-based organic photovoltaic device, while ZCl as acceptor gives a CT state energy of 1.70 ± 0.05 eV in the corresponding device structure. In the ZCl device this results in an energetic loss between E(CT) and qV(OC) of 0.37 eV, substantially less than the 0.6 eV typically observed for organic systems and equal to the recombination losses seen in high-efficiency Si and GaAs devices. The substantial increase in open-circuit voltage and reduction in recombination losses for devices utilizing ZCl demonstrate the great promise of symmetry-breaking charge transfer in organic photovoltaic devices.

Method and apparatus for I-V data acquisition from solar cells

DOEpatents

Cole, Steven W.

1985-01-01

A method and apparatus for logging current-voltage (I-V) characteristic d of a solar cell module (10) in two modes using a portable instrument. One mode controls the load current through a circuit (36) in 256 equal intervals while voltage is measured from open circuit to at least halfway into the knee of the curve and the other mode controls the load voltage through a circuit (34) in 256 equal intervals from the lowest voltage measurement possible (short circuit) to at least halfway into the knee of the curve, under control of a microcomputer (12). All measurements are packed by discarding each measurement that is within 0.5% of the value predicted from two previous measurements, except every ninth (9th) measurement which is retained. The remaining data is further packed into a memory block of a detachable storage medium (14) by recording the data points in sequence following a header containing data common to all points, with each point having the value of the controlled parameter recorded as the number of increments from the previous point recorded followed by the measured value. The detachable storage medium is preferably a solid state device for reliability, and is transferable to a playback terminal which unpacks the data for analysis and display.

Determination of rheogenic ion transport in rat proximal colon in vivo.

PubMed

Haag, K; Lübcke, R; Knauf, H; Berger, E; Gerok, W

1985-01-01

A direct clamping technique is demonstrated, which allows monitoring of rapid changes of the short-circuit current (Isc) and the specific transepithelial resistance (Rm) as well as measurement of ion fluxes under short-circuit conditions in vivo. Due to the cylindrical symmetry of the colon the intraluminal electrode was devised as a centrally fixed silver rod, by which radial current injection was achieved. The geometrical arrangement of the electrodes guaranteed zero potential difference (PD) along the whole axis of the colon segment. The Isc was determined to 3.3 +/- 0.7 mueq h-1 cm-2 and Rm equal to 121 +/- 5 omega cm2. These data obtained by direct short-circuiting agree well with our earlier Rm and Isc data based on cable analysis, where the Isc was calculated from the open-circuit PD and Rm. This is considered as evidence for the reliability of the two independent in vivo techniques. Their validity was confirmed by the expected effects of drugs acting on rheogenic ion transport. Both the indirect (via Rm) as well as the direct Isc determination may be used alternatively as required; one may serve to match the other. For larger tubular structures like the rat colon the direct clamping should be preferred as the standard procedure for the Isc determination in vivo.

A hybrid analytical model for open-circuit field calculation of multilayer interior permanent magnet machines

NASA Astrophysics Data System (ADS)

Zhang, Zhen; Xia, Changliang; Yan, Yan; Geng, Qiang; Shi, Tingna

2017-08-01

Due to the complicated rotor structure and nonlinear saturation of rotor bridges, it is difficult to build a fast and accurate analytical field calculation model for multilayer interior permanent magnet (IPM) machines. In this paper, a hybrid analytical model suitable for the open-circuit field calculation of multilayer IPM machines is proposed by coupling the magnetic equivalent circuit (MEC) method and the subdomain technique. In the proposed analytical model, the rotor magnetic field is calculated by the MEC method based on the Kirchhoff's law, while the field in the stator slot, slot opening and air-gap is calculated by subdomain technique based on the Maxwell's equation. To solve the whole field distribution of the multilayer IPM machines, the coupled boundary conditions on the rotor surface are deduced for the coupling of the rotor MEC and the analytical field distribution of the stator slot, slot opening and air-gap. The hybrid analytical model can be used to calculate the open-circuit air-gap field distribution, back electromotive force (EMF) and cogging torque of multilayer IPM machines. Compared with finite element analysis (FEA), it has the advantages of faster modeling, less computation source occupying and shorter time consuming, and meanwhile achieves the approximate accuracy. The analytical model is helpful and applicable for the open-circuit field calculation of multilayer IPM machines with any size and pole/slot number combination.

Hydraulic actuator for an electric circuit breaker

DOEpatents

Imam, I.

1983-05-17

This actuator comprises a fluid motor having a piston, a breaker-opening space at one side of the piston, and a breaker-closing space at its opposite side. An accumulator freely communicates with the breaker-opening space for supplying pressurized fluid thereto during a circuit breaker opening operation. The breaker-opening space and the breaker-closing space are connected by an impeded flow passage. A pilot valve opens to allow the pressurized liquid in the breaker-closing space to flow to a back chamber of a normally closed main valve to cause the main valve to be opened during a circuit breaker opening operation to release the pressurized liquid from the breaker-closing space. An impeded passage affords communication between the back chamber and a sump located on the opposite side of the main valve from the back chamber. The pilot valve and impeded passage allow rapid opening of the main valve with pressurized liquid from the breaker closing side of the piston. 3 figs.

Hydraulic actuator for an electric circuit breaker

DOEpatents

Imam, Imdad [Colonie, NY

1983-01-01

This actuator comprises a fluid motor having a piston, a breaker-opening space at one side of the piston, and a breaker-closing space at its opposite side. An accumulator freely communicates with the breaker-opening space for supplying pressurized fluid thereto during a circuit breaker opening operation. The breaker-opening space and the breaker-closing space are connected by an impeded flow passage. A pilot valve opens to allow the pressurized liquid in the breaker-closing space to flow to a back chamber of a normally closed main valve to cause the main valve to be opened during a circuit breaker opening operation to release the pressurized liquid from the breaker-closing space. An impeded passage affords communication between the back chamber and a sump located on the opposite side of the main valve from the back chamber. The pilot valve and impeded passage allow rapid opening of the main valve with pressurized liquid from the breaker closing side of the piston.

Comment on 'Power loss in open cavity diodes and a modified Child-Langmuir law' [Phys. Plasmas 12, 093102 (2005)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swanekamp, S. B.; Ottinger, P. F.

In this Comment, it is shown that no modification of the Child-Langmuir law [Phys. Rev.32, 492 (1911); Phys. Rev. 2, 450 (1913)] is necessary to treat the space-charge-limited flow from a diode with an open boundary as reported in Phys. Plasmas 12, 093102 (2005). The open boundary condition in their simulations can be represented by a voltage source and a resistor whose value is the vacuum-wave impedance of the opening. The diode can be represented as a variable resistor whose value depends on the voltage drop across the diode (as measured by the line integral of E across the diodemore » gap). This is a simple voltage-divider circuit whose analysis shows that the real diode voltage drops as the vacuum-wave impedance increases. Furthermore, it is shown that in equilibrium, the voltage drop between the anode and cathode is independent of the path chosen for the line integral of the electric field so that E=-{nabla}{phi} is valid. In this case, the equations of electrostatics are applicable. This clearly demonstrates that the electric field is electrostatic and static fields DO NOT RADIATE. It is shown that the diode voltage drops as the vacuum wave impedance increases and the current drops according to the Child-Langmuir law. Therefore, the observed drop in circuit current can be explained by a real drop in voltage across the diode and not an effective drop as claimed by the authors.« less

Differential Resonant Ring YIG Tuned Oscillator

NASA Technical Reports Server (NTRS)

Parrott, Ronald A.

2010-01-01

A differential SiGe oscillator circuit uses a resonant ring-oscillator topology in order to electronically tune the oscillator over multi-octave bandwidths. The oscillator s tuning is extremely linear, because the oscillator s frequency depends on the magnetic tuning of a YIG sphere, whose resonant frequency is equal to a fundamental constant times the DC magnetic field. This extremely simple circuit topology uses two coupling loops connecting a differential pair of SiGe bipolar transistors into a feedback configuration using a YIG tuned filter creating a closed-loop ring oscillator. SiGe device technology is used for this oscillator in order to keep the transistor s 1/f noise to an absolute minimum in order to achieve minimum RF phase noise. The single-end resonant ring oscillator currently has an advantage in fewer parts, but when the oscillation frequency is greater than 16 GHz, the package s parasitic behavior couples energy to the sphere and causes holes and poor phase noise performance. This is because the coupling to the YIG is extremely low, so that the oscillator operates at near the unloaded Q. With the differential resonant ring oscillator, the oscillation currents are just in the YIG coupling mechanisms. The phase noise is even better, and the physical size can be reduced to permit monolithic microwave integrated circuit oscillators. This invention is a YIG tuned oscillator circuit making use of a differential topology to simultaneously achieve an extremely broadband electronic tuning range and ultra-low phase noise. As a natural result of its differential circuit topology, all reactive elements, such as tuning stubs, which limit tuning bandwidth by contributing excessive open loop phase shift, have been eliminated. The differential oscillator s open-loop phase shift is associated with completely non-dispersive circuit elements such as the physical angle of the coupling loops, a differential loop crossover, and the high-frequency phase shift of the n-p-n transistors. At the input of the oscillator s feedback loop is a pair of differentially connected n-p-n SiGe transistors that provides extremely high gain, and because they are bulk-effect devices, extremely low 1/f noise (leading to ultralow RF phase noise). The 1/f corner frequency for n-p-n SiGe transistors is approximately 500 Hz. The RF energy from the transistor s collector output is connected directly to the top-coupling loop (the excitation loop) of a single-sphere YIG tuned filter. A uniform magnetic field to bias the YIG must be at a right angle to any vector associated with an RF current in a coupling loop in order for the precession to interact with the RF currents.

Blue photon management by inhouse grown ZnO:Al cathode for enhanced photostability in polymer solar cells

DOE PAGES

Bhattacharya, Joydeep; Peer, Akshit; Joshi, Pranav H.; ...

2018-02-21

Here, we report the improvement in photostability of P3HT:PC 60BM based bulk heterojunction solar cells deposited on Al-doped ZnO as a cathode layer replacing ITO as regularly used TCO in cells with N-I-P configuration. We experimentally and theoretically demonstrate that use of thicker ZnO:Al as cathode can successfully cut down the rate of photodegradation in short circuit current by ~40% and open circuit voltage by ~30% compared to the control device made on ITO based cathode. This effective reduction in photodegradation is understood to be coming from the absorption of ultraviolet and blue photon in the cathode layer itself. Themore » loss in short circuit current due to the loss of blue photon in EQE is compensated by higher FF (lower series resistance) due to thicker ZnO:Al layer resulting in final device efficiency almost uncompromised with added benefit of reduced photo degradation. The experimental results are supported with optical simulations which show more absorption in the short wavelength region for the thicker ZnO films, compared to ITO films, deposited on glass substrates. This work also proposes using ZnO:Al cathode as a template for random textured front surface to potentially increase short circuit current by increase in photon absorption in active layer matrix by light scattering techniques. Our results provide an inexpensive pathway for improving the stability of organic photovoltaics without compromising the device performance.« less

Blue photon management by inhouse grown ZnO:Al cathode for enhanced photostability in polymer solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhattacharya, Joydeep; Peer, Akshit; Joshi, Pranav H.

Here, we report the improvement in photostability of P3HT:PC 60BM based bulk heterojunction solar cells deposited on Al-doped ZnO as a cathode layer replacing ITO as regularly used TCO in cells with N-I-P configuration. We experimentally and theoretically demonstrate that use of thicker ZnO:Al as cathode can successfully cut down the rate of photodegradation in short circuit current by ~40% and open circuit voltage by ~30% compared to the control device made on ITO based cathode. This effective reduction in photodegradation is understood to be coming from the absorption of ultraviolet and blue photon in the cathode layer itself. Themore » loss in short circuit current due to the loss of blue photon in EQE is compensated by higher FF (lower series resistance) due to thicker ZnO:Al layer resulting in final device efficiency almost uncompromised with added benefit of reduced photo degradation. The experimental results are supported with optical simulations which show more absorption in the short wavelength region for the thicker ZnO films, compared to ITO films, deposited on glass substrates. This work also proposes using ZnO:Al cathode as a template for random textured front surface to potentially increase short circuit current by increase in photon absorption in active layer matrix by light scattering techniques. Our results provide an inexpensive pathway for improving the stability of organic photovoltaics without compromising the device performance.« less

46 CFR 169.670 - Circuit breakers.

Code of Federal Regulations, 2010 CFR

2010-10-01

... Gross Tons § 169.670 Circuit breakers. Each circuit breaker must be of the manually reset type designed for— (a) Inverse time delay; (b) Instantaneous short circuit protection; and (c) Repeated opening of... 46 Shipping 7 2010-10-01 2010-10-01 false Circuit breakers. 169.670 Section 169.670 Shipping COAST...

Antenna-coupled unbiased detectors for LW-IR regime

NASA Astrophysics Data System (ADS)

Tiwari, Badri Nath

At room temperature (300K), the electromagnetic (EM) radiation emitted by humans and other living beings peaks mostly in the long-wavelength infrared (LW-IR) regime. And since the atmosphere shows relatively little absorption in this band, applications such as target detection, tracking, active homing, and navigation in autonomous vehicles extensively use the LW-IR frequency range. The present research work is focused on developing antenna-based, uncooled, and unbiased detectors for the LW-IR regime. In the first part of this research, antenna-coupled metal-oxide-metal diodes (ACMOMD) are investigated. In response to the EM radiation, high-frequency antenna currents are induced in the antenna. An asymmetric-barrier Al-Al2O3-Pt MOM diode rectifies the antenna currents. Two different types of fabrication processes have been developed for ACMOMDs namely one-step lithography and two-step lithography. The major drawbacks of MOM-based devices include hard-to-control fabrication processes, generally very high zero-biased resistances, and vulnerability to electrostatic discharges, leading to unstable electrical characteristics. The second part of this research focuses on the development of unbiased LW-IR sensors based on the Seebeck effect. If two different metals are joined together at one end and their other ends are open-circuited, and if a non-zero temperature difference exists between the joined end and the open ends, then a non-zero open-circuit voltage can be measured between the open ends of the wires. Based on this effect, we have developed antenna-coupled nano-thermocouples (ACNTs) in which radiation-induced antenna currents produce polarization-dependent heating of the joined end of the two metals whereas the open ends remain at substrate temperature. This polarization-dependent heating induces polarization-dependent temperature difference between the joined end and the open ends of the metals leading to a polarization-dependent open-circuit voltage between the open ends of the metals. A CW CO2 laser tuned at 10.6 mum wavelength has been used for infrared characterization of these sensors. For these sensors, average responsivity of 22.7 mV/W, signal-to-noise (SNR) ratio of 29 dB, noise equivalent power (NEP) of 1.55 nW, and specific detectivity (D*) of 1.77x105 cm. Hz .W--1 were measured. ACNTs are expected to operate at frequencies much beyond 400 KHz. The third part of this research focuses on the effect of DC read-out interconnects on polarization characteristics of the planar dipole antennas. Different geometries of the interconnects present different electromagnetic boundary conditions to the antenna, and thus affect the far-field polarization characteristics of the antenna. Four designs of DC read-out interconnects are fabricated and their polarization-dependent IR responses are experimentally measured. The High Frequency Structure Simulator (HFSS) from ANSYS is used to simulate the polarization characteristics of the antenna with different read-out geometries.

30 CFR 75.900 - Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit...

Code of Federal Regulations, 2011 CFR

2011-07-01

...-phase alternating current equipment; circuit breakers. 75.900 Section 75.900 Mineral Resources MINE... Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit breakers. [Statutory Provisions] Low- and medium-voltage power circuits serving three-phase alternating current...

Current limiter circuit system

DOEpatents

Witcher, Joseph Brandon; Bredemann, Michael V.

2017-09-05

An apparatus comprising a steady state sensing circuit, a switching circuit, and a detection circuit. The steady state sensing circuit is connected to a first, a second and a third node. The first node is connected to a first device, the second node is connected to a second device, and the steady state sensing circuit causes a scaled current to flow at the third node. The scaled current is proportional to a voltage difference between the first and second node. The switching circuit limits an amount of current that flows between the first and second device. The detection circuit is connected to the third node and the switching circuit. The detection circuit monitors the scaled current at the third node and controls the switching circuit to limit the amount of the current that flows between the first and second device when the scaled current is greater than a desired level.

An analytical-numerical approach for parameter determination of a five-parameter single-diode model of photovoltaic cells and modules

NASA Astrophysics Data System (ADS)

Hejri, Mohammad; Mokhtari, Hossein; Azizian, Mohammad Reza; Söder, Lennart

2016-04-01

Parameter extraction of the five-parameter single-diode model of solar cells and modules from experimental data is a challenging problem. These parameters are evaluated from a set of nonlinear equations that cannot be solved analytically. On the other hand, a numerical solution of such equations needs a suitable initial guess to converge to a solution. This paper presents a new set of approximate analytical solutions for the parameters of a five-parameter single-diode model of photovoltaic (PV) cells and modules. The proposed solutions provide a good initial point which guarantees numerical analysis convergence. The proposed technique needs only a few data from the PV current-voltage characteristics, i.e. open circuit voltage Voc, short circuit current Isc and maximum power point current and voltage Im; Vm making it a fast and low cost parameter determination technique. The accuracy of the presented theoretical I-V curves is verified by experimental data.

Modelling of electric characteristics of 150-watt peak solar panel using Boltzmann sigmoid function under various temperature and irradiance

NASA Astrophysics Data System (ADS)

Sapteka, A. A. N. G.; Narottama, A. A. N. M.; Winarta, A.; Amerta Yasa, K.; Priambodo, P. S.; Putra, N.

2018-01-01

Solar energy utilized with solar panel is a renewable energy that needs to be studied further. The site nearest to the equator, it is not surprising, receives the highest solar energy. In this paper, a modelling of electrical characteristics of 150-Watt peak solar panels using Boltzmann sigmoid function under various temperature and irradiance is reported. Current, voltage, temperature and irradiance data in Denpasar, a city located at just south of equator, was collected. Solar power meter is used to measure irradiance level, meanwhile digital thermometer is used to measure temperature of front and back panels. Short circuit current and open circuit voltage data was also collected at different temperature and irradiance level. Statistically, the electrical characteristics of 150-Watt peak solar panel can be modelled using Boltzmann sigmoid function with good fit. Therefore, it can be concluded that Boltzmann sigmoid function might be used to determine current and voltage characteristics of 150-Watt peak solar panel under various temperature and irradiance.

Cathode buffer composed of fullerene-ethylenediamine adduct for an organic solar cell

NASA Astrophysics Data System (ADS)

Kimoto, Yoshinori; Akiyama, Tsuyoshi; Fujita, Katsuhiko

2017-02-01

We developed a fullerene-ethylenediamine adduct (C60P-DC) for a cathode buffer material in organic bulk heterojunction solar cells, which enhance the open-circuit voltage (V oc). The evaporative spray deposition using ultra dilute solution (ESDUS) technique was employed to deposit the buffer layer onto the organic active layer to avoid damage during the deposition. By the insertion of a C60P-DC buffer layer, V oc and power conversion efficiency (PCE) were increased from 0.41 to 0.57 V and from 1.65 to 2.10%, respectively. The electron-only device with the C60P-DC buffer showed a much lower current level than that without the buffer, indicating that the V oc increase is caused not by vacuum level shift but by hole blocking. The curve fitting of current density-voltage (J-V) characteristics to the equivalent circuit with a single diode indicated that the decrease in reversed saturation current by hole blocking increased caused the V oc.

On-Die Sensors for Transient Events

NASA Astrophysics Data System (ADS)

Suchak, Mihir Vimal

Failures caused by transient electromagnetic events like Electrostatic Discharge (ESD) are a major concern for embedded systems. The component often failing is an integrated circuit (IC). Determining which IC is affected in a multi-device system is a challenging task. Debugging errors often requires sophisticated lab setups which require intentionally disturbing and probing various parts of the system which might not be easily accessible. Opening the system and adding probes may change its response to the transient event, which further compounds the problem. On-die transient event sensors were developed that require relatively little area on die, making them inexpensive, they consume negligible static current, and do not interfere with normal operation of the IC. These circuits can be used to determine the pin involved and the level of the event in the event of a transient event affecting the IC, thus allowing the user to debug system-level transient events without modifying the system. The circuit and detection scheme design has been completed and verified in simulations with Cadence Virtuoso environment. Simulations accounted for the impact of the ESD protection circuits, parasitics from the I/O pin, package and I/O ring, and included a model of an ESD gun to test the circuit's response to an ESD pulse as specified in IEC 61000-4-2. Multiple detection schemes are proposed. The final detection scheme consists of an event detector and a level sensor. The event detector latches on the presence of an event at a pad, to determine on which pin an event occurred. The level sensor generates current proportional to the level of the event. This current is converted to a voltage and digitized at the A/D converter to be read by the microprocessor. Detection scheme shows good performance in simulations when checked against process variations and different kind of events.

Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology

PubMed Central

Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

2015-01-01

This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm2, and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p+−n homojunction through the formation of re-grown crystalline silicon layer (~5–10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method. PMID:26632759

InGaP Heterojunction Barrier Solar Cells

NASA Technical Reports Server (NTRS)

Welser, Roger E.

2010-01-01

A new solar-cell structure utilizes a single, ultra-wide well of either gallium arsenide (GaAs) or indium-gallium-phosphide (InGaP) in the depletion region of a wide bandgap matrix, instead of the usual multiple quantum well layers. These InGaP barrier layers are effective at reducing diode dark current, and photogenerated carrier escape is maximized by the proper design of the electric field and barrier profile. With the new material, open-circuit voltage enhancements of 40 and 100 mV (versus PIN control systems) are possible without any degradation in short-circuit current. Basic tenets of quantum-well and quantum- dot solar cells are utilized, but instead of using multiple thin layers, a single wide well works better. InGaP is used as a barrier material, which increases open current, while simultaneously lowering dark current, reducing both hole diffusion from the base, and space charge recombination within the depletion region. Both the built-in field and the barrier profile are tailored to enhance thermionic emissions, which maximizes the photocurrent at forward bias, with a demonstrated voltage increase. An InGaP heterojunction barrier solar cell consists of a single, ultra-wide GaAs, aluminum-gallium-arsenide (AlGaAs), or lower-energy-gap InGaP absorber well placed within the depletion region of an otherwise wide bandgap PIN diode. Photogenerated electron collection is unencumbered in this structure. InGaAs wells can be added to the thick GaAs absorber layer to capture lower-energy photons.

29 CFR 1910.401 - Scope and application.

Code of Federal Regulations, 2014 CFR

2014-07-01

... is using an open-circuit, semi-closed-circuit, or closed-circuit self-contained underwater breathing... death, serious physical harm, or major environmental damage, provided that the employer: (1) Notifies...

29 CFR 1910.401 - Scope and application.

Code of Federal Regulations, 2012 CFR

2012-07-01

... is using an open-circuit, semi-closed-circuit, or closed-circuit self-contained underwater breathing... death, serious physical harm, or major environmental damage, provided that the employer: (1) Notifies...

29 CFR 1910.401 - Scope and application.

Code of Federal Regulations, 2011 CFR

2011-07-01

... is using an open-circuit, semi-closed-circuit, or closed-circuit self-contained underwater breathing... death, serious physical harm, or major environmental damage, provided that the employer: (1) Notifies...

29 CFR 1910.401 - Scope and application.

Code of Federal Regulations, 2013 CFR

2013-07-01

... is using an open-circuit, semi-closed-circuit, or closed-circuit self-contained underwater breathing... death, serious physical harm, or major environmental damage, provided that the employer: (1) Notifies...

Improved current extraction from ZnO/PbS quantum dot heterojunction photovoltaics using a MoO3 interfacial layer.

PubMed

Brown, Patrick R; Lunt, Richard R; Zhao, Ni; Osedach, Timothy P; Wanger, Darcy D; Chang, Liang-Yi; Bawendi, Moungi G; Bulović, Vladimir

2011-07-13

The ability to engineer interfacial energy offsets in photovoltaic devices is one of the keys to their optimization. Here, we demonstrate that improvements in power conversion efficiency may be attained for ZnO/PbS heterojunction quantum dot photovoltaics through the incorporation of a MoO(3) interlayer between the PbS colloidal quantum dot film and the top-contact anode. Through a combination of current-voltage characterization, circuit modeling, Mott-Schottky analysis, and external quantum efficiency measurements performed with bottom- and top-illumination, these enhancements are shown to stem from the elimination of a reverse-bias Schottky diode present at the PbS/anode interface. The incorporation of the high-work-function MoO(3) layer pins the Fermi level of the top contact, effectively decoupling the device performance from the work function of the anode and resulting in a high open-circuit voltage (0.59 ± 0.01 V) for a range of different anode materials. Corresponding increases in short-circuit current and fill factor enable 1.5-fold, 2.3-fold, and 4.5-fold enhancements in photovoltaic device efficiency for gold, silver, and ITO anodes, respectively, and result in a power conversion efficiency of 3.5 ± 0.4% for a device employing a gold anode.

Integrating a Silicon Solar Cell with a Triboelectric Nanogenerator via a Mutual Electrode for Harvesting Energy from Sunlight and Raindrops.

PubMed

Liu, Yuqiang; Sun, Na; Liu, Jiawei; Wen, Zhen; Sun, Xuhui; Lee, Shuit-Tong; Sun, Baoquan

2018-03-27

Solar cells, as promising devices for converting light into electricity, have a dramatically reduced performance on rainy days. Here, an energy harvesting structure that integrates a solar cell and a triboelectric nanogenerator (TENG) device is built to realize power generation from both sunlight and raindrops. A heterojunction silicon (Si) solar cell is integrated with a TENG by a mutual electrode of a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) film. Regarding the solar cell, imprinted PEDOT:PSS is used to reduce light reflection, which leads to an enhanced short-circuit current density. A single-electrode-mode water-drop TENG on the solar cell is built by combining imprinted polydimethylsiloxane (PDMS) as a triboelectric material combined with a PEDOT:PSS layer as an electrode. The increasing contact area between the imprinted PDMS and water drops greatly improves the output of the TENG with a peak short-circuit current of ∼33.0 nA and a peak open-circuit voltage of ∼2.14 V, respectively. The hybrid energy harvesting system integrated electrode configuration can combine the advantages of high current level of a solar cell and high voltage of a TENG device, promising an efficient approach to collect energy from the environment in different weather conditions.

Modulating light propagation in ZnO-Cu₂O-inverse opal solar cells for enhanced photocurrents.

PubMed

Yantara, Natalia; Pham, Thi Thu Trang; Boix, Pablo P; Mathews, Nripan

2015-09-07

The advantages of employing an interconnected periodic ZnO morphology, i.e. an inverse opal structure, in electrodeposited ZnO/Cu2O devices are presented. The solar cells are fabricated using low cost solution based methods such as spin coating and electrodeposition. The impact of inverse opal geometry, mainly the diameter and thickness, is scrutinized. By employing 3 layers of an inverse opal structure with a 300 nm pore diameter, higher short circuit photocurrents (∼84% improvement) are observed; however the open circuit voltages decrease with increasing interfacial area. Optical simulation using a finite difference time domain method shows that the inverse opal structure modulates light propagation within the devices such that more photons are absorbed close to the ZnO/Cu2O junction. This increases the collection probability resulting in improved short circuit currents.

Capacitive Neutralization Dialysis for Direct Energy Generation.

PubMed

Liu, Yue; Zhang, Yi; Ou-Yang, Wei; Bastos Sales, Bruno; Sun, Zhuo; Liu, Fei; Zhao, Ran

2017-08-15

Capacitive neutralization dialysis energy (CNDE) is proposed as a novel energy-harvesting technique that is able to utilize waste acid and alkaline solutions to produce electrical energy. CNDE is a modification based on neutralization dialysis. It was found that a higher NaCl concentration led to a higher open-circuit potential when the concentrations of acid and alkaline solutions were fixed. Upon closing of the circuit, the membrane potential was used as a driving force to move counter ions into the electrical double layers at the electrode-liquid interface, thereby creating an ionic current. Correspondingly, in the external circuit, electrons flow through an external resistor from one electrode to the other, thereby generating electrical energy directly. The influence of external resistances was studied to achieve greater energy extraction, with the maximum output of 110 mW/m 2 obtained by employing an external resistance of 5 Ω together with the AC-coated electrode.

Virtualization of AEGIS: A Study of the Feasibility of Applying Open Architecture Technology to the Surface Navy’s Most Complex Automated Weapon System

DTIC Science & Technology

2011-09-01

diagnostics system. Aerospace and Electronic Systems Magazine, IEEE , 9(2), 40–45. Current version released August 2002 in IEEE Xplore . doi: 10.1109...Cramming more components onto integrated circuits. Electronics, 114–117. Reprinted January 1998 in Proceedings of the IEEE , 86(1), 82–85. doi: S 0018

Effects of Chemical Treatments on Microbiologically Influenced Corrosion

NASA Astrophysics Data System (ADS)

Friedman, E. S.; Strom, M.; Dexter, S. C.

2008-12-01

Biofilms are known to have an effect on galvanic corrosion of alloys in seawater systems. In the Delaware Bay, biofilm formation on surface of cathodes has been shown to cause galvanic corrosion to occur up to 100 times more rapidly. Given the impacts that corrosion can have on structures, it is important to study how we can affect corrosion rates. One way of doing this is the application of chemical treatments to biofilms on metal samples. To investigate this, natural marine biofilms were grown on alloy 6XN stainless steel samples, and various chemical treatments were applied to discover their effects on open circuit potentials and corrosion currents. Another objective of this study was to determine if there was a threshold molecular weight above which molecules were unable to penetrate the biofilm. It was discovered that chemicals with molecular weights as high as 741.6 g/mol were able to penetrate at least some parts of the heterogeneous biofilm and reach the metal surface. No upper threshold value was found in this study. It was found that the reducing agents sodium L-ascorbate and NADH as well as the chelate ferizene caused a drop in open circuit potential of biofilmed 6XN samples. Also, glutaraldahyde, which is used as a fixative for bacteria, shifted the open circuit potential of biofilm samples in the noble direction but had no effect on the corrosion current. Sodium L- ascorbate was found to reach the metal surface, but in concentrations lower than those present in the bulk fluid. It was not determined in this study whether this was due to physical or chemical processes within the biofilm. A synergistic effect was observed when applying a mixture of ferizene and glutaraldahyde. It is thought that this was due to the death of the bacteria as well as the disruption of iron cycling in the biofilm. Finally, it was observed that NADH caused a reduction in current at potentials associated with iron reduction, leading us to believe that the iron was being reduced by the NADH.

Type II GaSb quantum ring solar cells under concentrated sunlight.

PubMed

Tsai, Che-Pin; Hsu, Shun-Chieh; Lin, Shih-Yen; Chang, Ching-Wen; Tu, Li-Wei; Chen, Kun-Cheng; Lay, Tsong-Sheng; Lin, Chien-chung

2014-03-10

A type II GaSb quantum ring solar cell is fabricated and measured under the concentrated sunlight. The external quantum efficiency confirms the extended absorption from the quantum rings at long wavelength coinciding with the photoluminescence results. The short-circuit current of the quantum ring devices is 5.1% to 9.9% more than the GaAs reference's under various concentrations. While the quantum ring solar cell does not exceed its GaAs counterpart in efficiency under one-sun, the recovery of the open-circuit voltages at higher concentration helps to reverse the situation. A slightly higher efficiency (10.31% vs. 10.29%) is reported for the quantum ring device against the GaAs one.

Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mukhtarova, Anna; Valdueza-Felip, Sirona; Redaelli, Luca

2016-04-18

We investigate the photovoltaic performance of pseudomorphic In{sub 0.1}Ga{sub 0.9}N/GaN multiple-quantum well (MQW) solar cells as a function of the total active region thickness. An increase in the number of wells from 5 to 40 improves the short-circuit current and the open-circuit voltage, resulting in a 10-fold enhancement of the overall conversion efficiency. Further increasing the number of wells leads to carrier collection losses due to an incomplete depletion of the active region. Capacitance-voltage measurements point to a hole diffusion length of 48 nm in the MQW region.

4H SiC betavoltaic powered temperature transducer

NASA Astrophysics Data System (ADS)

Chandrashekhar, M. V. S.; Duggirala, Rajesh; Spencer, Michael G.; Lal, Amit

2007-07-01

The change in open-circuit voltage of a 4H SiC p-n diode betavoltaic cell in response to temperature was used to sense temperature. A linear sensitivity of 2.7mV /K was obtained from 24to86°C. This was achieved with only 2.5μCi of active nickel-63 as the β source, giving a short circuit current of 21pA, a low-enough activity for civilian applications. The measured sensitivity of 2.7mV/K was lower than the 5.5mV/K predicted from the theory. The 28GΩ shunt resistance of the betavoltaic cell was used to explain the lower sensitivity.

Demonstration of a 4H SiC Betavoltaic Nuclear Battery Based on Schottky Barrier Diode

NASA Astrophysics Data System (ADS)

Qiao, Da-Yong; Yuan, Wei-Zheng; Gao, Peng; Yao, Xian-Wang; Zang, Bo; Zhang, Lin; Guo, Hui; Zhang, Hong-Jian

2008-10-01

A 4H SiC betavoltaic nuclear battery is demonstrated. A Schottky barrier diode is utilized for carrier separation. Under illumination of Ni-63 source with an apparent activity of 4 mCi/cm2 an open circuit voltage of 0.49 V and a short circuit current density of 29.44 nA/cm2 are measured. A power conversion efficiency of 1.2% is obtained. The performance of the device is limited by low shunt resistance, backscattering and attenuation of electron energy in air and Schottky electrode. It is expected to be significantly improved by optimizing the design and processing technology of the device.

A review of the thermoelectronic laser energy converter (TELEC) program at Lewis Research Center

NASA Technical Reports Server (NTRS)

Alger, D. L.; Manista, E. J.; Thompson, R. W.

1978-01-01

The investigation of the Thermoelectronic Laser Energy Converter (TELEC) concept began with a feasibility study of a 1 megawatt sized TELEC system. The TELEC was to use either cesium vapor or hydrogen as the plasma medium. The cesium vapor TELEC appears to be the more practical device studied with an overall calculated conversion efficiency of greater than 48%. Following this study, a small TELEC cell was fabricated which demonstrated the conversion of a small amount of laser power to electrical power. The cell developed a short circuit current of 0.7 amperes and an open circuit voltage, as extrapolated from volt-ampere curves, of about 1.5 volts.

Enhanced Power Conversion Efficiency of Graphene/Silicon Heterojunction Solar Cells Through NiO Induced Doping.

PubMed

Kuru, Cihan; Yavuz, Serdar; Kargar, Alireza; Choi, Duyoung; Choi, Chulmin; Rustomji, Cyrus; Jin, Sungho; Bandaru, Prabhakar R

2016-01-01

We report a doping strategy, where nickel oxide (NiO) nanoparticle film coating is employed for graphene/Si heterojunction solar cells to improve the power conversion efficiency (PCE). NiO doping has been shown to improve the short circuit current (J(SC)) by 12%, open circuit voltage (V(OC)) by 25% and fill factor (FF) by 145% of the cells, in turn increasing the PCE from 1.37% to 4.91%. Furthermore, NiO doped graphene/Si solar cells don't show any significant performance degradation over 10 days revealing that NiO doping can be a promising approach for practical applications of graphene in solar cells.

Calculation and Analysis of Dynamic Characteristics of Multilink Permanent Magnetic Actuator in Vacuum Circuit Breaker

NASA Astrophysics Data System (ADS)

Liu, Yingyi; Yuan, Haiwen; Zhang, Qingjie; Chen, Degui; Yuan, Haibin

The dynamic characteristics are the key issues in the optimum design of a permanent magnetic actuator (PMA). A new approach to forecast the dynamic characteristics of the multilink PMA is proposed. By carrying out further developments of ADAMS and ANSOFT, a mathematic calculation model describing the coupling of mechanical movement, electric circuit and magnetic field considering eddy current effect, is constructed. With this model, the dynamic characteristics of the multilink PMA are calculated and compared with the experimental results. Factors that affect the opening time of the multilink PMA are analyzed with the model as well. The method is capable of providing a reference for the design of the PMA.

Optimization of the parameters of ITO-CdTe photovoltaic cells

NASA Astrophysics Data System (ADS)

Adib, N.; Simashkevich, A. V.; Sherban, D. A.

The effect of the surface state density at the interface and of the static charge in the intermediate oxide layer on the photoelectric parameters of solar cells based on ITO-nCdTe semiconductor-insulator-semiconductor structures is calculated theoretically. It is shown that,under AMI conditions, the conversion efficiency of such cells can be as high as 12 percent (short-circuit current, 23 mA/sq cm; open-circuit voltage, 0.65 V; fill factor, 0.8), provided that the surface states are acceptors and the oxide is negatively charged. It is concluded that surface states and the dielectric layer charge have a positive effect on the efficiency of solar cells of this type.

Triboelectric Nanogenerator Using Lithium Niobate Thin Film

NASA Astrophysics Data System (ADS)

Geng, Juan; Zhang, Xinzheng; Kong, Yongfa; Xu, Jingjun

2017-06-01

We present a triboelectric nanogenerator (TENG) using a lithium niobate thin film, as one of the triboelectric pairs which was grown on a silicon substrate by laser molecule beam epitaxy (LMBE). The designed TENG has the advantages of simple structure, easy fabrication, small size (1.1*1.0*0.15 cm3). An open-circuit voltage of 136 V and a short-circuit current of 8.40 μA have been achieved. The maximum output power is 307.5μW under the load resistance of 10MΩ. This is the first time to use lithium niobate thin film as one of the friction pair, which may make it possible to expand the application of triboelectric nanogenerator to optical field.

Piper Ornatum and Piper Betle as Organic Dyes for TiO2 and SnO2 Dye Sensitized Solar Cells

NASA Astrophysics Data System (ADS)

Hayat, Azwar; Putra, A. Erwin E.; Amaliyah, Novriany; Hayase, Shuzi; Pandey, Shyam. S.

2018-03-01

Dye sensitized solar cell (DSSC) mimics the principle of natural photosynthesis are now currently investigated due to low manufacturing cost as compared to silicon based solar cells. In this report, we utilized Piper ornatum (PO) and Piper betle (PB) as sensitizer to fabricate low cost DSSCs. We compared the photovoltaic performance of both sensitizers with Titanium dioxide (TiO2) and Tin dioxide (SnO2) semiconductors. The results show that PO and PB dyes have higher Short circuit current (Jsc) when applied in SnO2 compared to standard TiO2 photo-anode film even though the Open circuit voltage (Voc) was hampered on SnO2 device. In conclusion, from the result, higher electron injections can be achieved by choosing appropriate semiconductors with band gap that match with dyes energy level as one of strategy for further low cost solar cell.

Spray pyrolyzed Cu2SnS3 thin films for photovoltaic application

NASA Astrophysics Data System (ADS)

Patel, Biren; Waldiya, Manmohansingh; Pati, Ranjan K.; Mukhopadhyay, Indrajit; Ray, Abhijit

2018-05-01

We report the fabrication of Cu2SnS3 (CTS) thin films by a non-vacuum and low cost spray pyrolysis technique. Annealing of the as-deposited film in the sulphur atmosphere produces highly stoichiometric, granular and crystalline CTS phase. The CTS thin films shows direct optical band gap of 1.58 eV with high absorption coefficient of 105 cm-1. Hall measurement shows the carrier concentration of the order of 1021 cm-3 and a favourable resistivity of 10-3 Ω cm. A solar cell architecture of Glass/FTO/CTS/CdS/Al:ZnO/Al was fabricated and its current-voltage characteristic shows an open circuit voltage, short circuit current density and fill-factor of 12.6 mV, 20.2 µA/cm2 and 26% respectively. A further improvement in the solar cell parameters is underway.

The effects of interfacial recombination and injection barrier on the electrical characteristics of perovskite solar cells

NASA Astrophysics Data System (ADS)

Shi, Lin Xing; Wang, Zi Shuai; Huang, Zengguang; Sha, Wei E. I.; Wang, Haoran; Zhou, Zhen

2018-02-01

Charge carrier recombination in the perovskite solar cells (PSCs) has a deep influence on the electrical performance, such as open circuit voltage, short circuit current, fill factor and ultimately power conversion efficiency. The impacts of injection barrier, recombination channels, doping properties of carrier transport layers and light intensity on the performance of PSCs are theoretically investigated by drift-diffusion model in this work. The results indicate that due to the injection barrier at the interfaces of perovskite and carrier transport layer, the accumulated carriers modify the electric field distribution throughout the PSCs. Thus, a zero electric field is generated at a specific applied voltage, with greatly increases the interfacial recombination, resulting in a local kink of current density-voltage (J-V) curve. This work provides an effective strategy to improve the efficiency of PSCs by pertinently reducing both the injection barrier and interfacial recombination.

Silicon Solar Cell Process Development, Fabrication and Analysis, Phase 1

NASA Technical Reports Server (NTRS)

Yoo, H. I.; Iles, P. A.; Tanner, D. P.

1979-01-01

Solar cells from RTR ribbons, EFG (RF and RH) ribbons, dendritic webs, Silso wafers, cast silicon by HEM, silicon on ceramic, and continuous Czochralski ingots were fabricated using a standard process typical of those used currently in the silicon solar cell industry. Back surface field (BSF) processing and other process modifications were included to give preliminary indications of possible improved performance. The parameters measured included open circuit voltage, short circuit current, curve fill factor, and conversion efficiency (all taken under AM0 illumination). Also measured for typical cells were spectral response, dark I-V characteristics, minority carrier diffusion length, and photoresponse by fine light spot scanning. the results were compared to the properties of cells made from conventional single crystalline Czochralski silicon with an emphasis on statistical evaluation. Limited efforts were made to identify growth defects which will influence solar cell performance.

49 CFR 236.60 - Switch shunting circuit; use restricted.

Code of Federal Regulations, 2013 CFR

2013-10-01

..., INSPECTION, MAINTENANCE, AND REPAIR OF SIGNAL AND TRAIN CONTROL SYSTEMS, DEVICES, AND APPLIANCES Rules and... circuit shall not be hereafter installed, except where tract or control circuit is opened by the circuit controller. [49 FR 3384, Jan. 26, 1984] Wires and Cables ...

49 CFR 236.60 - Switch shunting circuit; use restricted.

Code of Federal Regulations, 2014 CFR

2014-10-01

..., INSPECTION, MAINTENANCE, AND REPAIR OF SIGNAL AND TRAIN CONTROL SYSTEMS, DEVICES, AND APPLIANCES Rules and... circuit shall not be hereafter installed, except where tract or control circuit is opened by the circuit controller. [49 FR 3384, Jan. 26, 1984] Wires and Cables ...

49 CFR 236.60 - Switch shunting circuit; use restricted.

Code of Federal Regulations, 2011 CFR

2011-10-01

..., INSPECTION, MAINTENANCE, AND REPAIR OF SIGNAL AND TRAIN CONTROL SYSTEMS, DEVICES, AND APPLIANCES Rules and... circuit shall not be hereafter installed, except where tract or control circuit is opened by the circuit controller. [49 FR 3384, Jan. 26, 1984] Wires and Cables ...

49 CFR 236.60 - Switch shunting circuit; use restricted.

Code of Federal Regulations, 2010 CFR

2010-10-01

..., INSPECTION, MAINTENANCE, AND REPAIR OF SIGNAL AND TRAIN CONTROL SYSTEMS, DEVICES, AND APPLIANCES Rules and... circuit shall not be hereafter installed, except where tract or control circuit is opened by the circuit controller. [49 FR 3384, Jan. 26, 1984] Wires and Cables ...

49 CFR 236.60 - Switch shunting circuit; use restricted.

Code of Federal Regulations, 2012 CFR

2012-10-01

..., INSPECTION, MAINTENANCE, AND REPAIR OF SIGNAL AND TRAIN CONTROL SYSTEMS, DEVICES, AND APPLIANCES Rules and... circuit shall not be hereafter installed, except where tract or control circuit is opened by the circuit controller. [49 FR 3384, Jan. 26, 1984] Wires and Cables ...

49 CFR 236.732 - Controller, circuit; switch.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 49 Transportation 4 2013-10-01 2013-10-01 false Controller, circuit; switch. 236.732 Section 236... § 236.732 Controller, circuit; switch. A device for opening and closing electric circuits, operated by a rod connected to a switch, derail or movable-point frog. ...

49 CFR 236.732 - Controller, circuit; switch.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 49 Transportation 4 2011-10-01 2011-10-01 false Controller, circuit; switch. 236.732 Section 236... § 236.732 Controller, circuit; switch. A device for opening and closing electric circuits, operated by a rod connected to a switch, derail or movable-point frog. ...

49 CFR 236.732 - Controller, circuit; switch.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 49 Transportation 4 2014-10-01 2014-10-01 false Controller, circuit; switch. 236.732 Section 236... § 236.732 Controller, circuit; switch. A device for opening and closing electric circuits, operated by a rod connected to a switch, derail or movable-point frog. ...

49 CFR 236.732 - Controller, circuit; switch.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 49 Transportation 4 2012-10-01 2012-10-01 false Controller, circuit; switch. 236.732 Section 236... § 236.732 Controller, circuit; switch. A device for opening and closing electric circuits, operated by a rod connected to a switch, derail or movable-point frog. ...

49 CFR 236.732 - Controller, circuit; switch.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 4 2010-10-01 2010-10-01 false Controller, circuit; switch. 236.732 Section 236.732 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD... § 236.732 Controller, circuit; switch. A device for opening and closing electric circuits, operated by a...

Dynamics of Cathode-Associated Microbial Communities and Metabolite Profiles in a Glycerol-Fed Bioelectrochemical System

PubMed Central

Dennis, Paul G.; Harnisch, Falk; Yeoh, Yun Kit; Tyson, Gene W.

2013-01-01

Electrical current can be used to supply reducing power to microbial metabolism. This phenomenon is typically studied in pure cultures with added redox mediators to transfer charge. Here, we investigate the development of a current-fed mixed microbial community fermenting glycerol at the cathode of a bioelectrochemical system in the absence of added mediators and identify correlations between microbial diversity and the respective product outcomes. Within 1 week of inoculation, a Citrobacter population represented 95 to 99% of the community and the metabolite profiles were dominated by 1,3-propanediol and ethanol. Over time, the Citrobacter population decreased in abundance while that of a Pectinatus population and the formation of propionate increased. After 6 weeks, several Clostridium populations and the production of valerate increased, which suggests that chain elongation was being performed. Current supply was stopped after 9 weeks and was associated with a decrease in glycerol degradation and alcohol formation. This decrease was reversed by resuming current supply; however, when hydrogen gas was bubbled through the reactor during open-circuit operation (open-circuit potential) as an alternative source of reducing power, glycerol degradation and metabolite production were unaffected. Cyclic voltammetry revealed that the community appeared to catalyze the hydrogen evolution reaction, leading to a +400-mV shift in its onset potential. Our results clearly demonstrate that current supply can alter fermentation profiles; however, further work is needed to determine the mechanisms behind this effect. In addition, operational conditions must be refined to gain greater control over community composition and metabolic outcomes. PMID:23603684

Hydraulically-activated operating system for an electric circuit breaker

DOEpatents

Imam, Imdad; Barkan, Philip

1979-01-01

This operating system comprises a fluid motor having a piston, a breaker-opening space at one side of the piston, and a breaker-closing space at its opposite side. An accumulator freely communicates with the breaker-opening space for supplying pressurized fluid thereto during a circuit-breaker opening operation. A normally-closed valve located on the breaker-closing-side of the piston is openable to release liquid from the breaker-closing space so that pressurized liquid in the breaker-opening space can drive the piston in an opening direction. Means is provided for restoring the valve to its closed position following the circuit-breaker opening operation. An impeded passage affords communication between the accumulator and the breaker-closing space to allow pressurized liquid to flow from the accumulator to the breaker-closing space and develop a pressure therein substantially equal to accumulator pressure when the valve is restored to closed position following breaker-opening. This passage is so impeded that the flow therethrough from the accumulator into the breaker-closing space is sufficiently low during initial opening motion of the piston through a substantial portion of its opening stroke as to avoid interference with said initial opening motion of the piston.

Influence of Chloride Ions as Contaminants on the Corrosion Behavior of Alloy 718 in Pool Water of Nuclear Power Plants

NASA Astrophysics Data System (ADS)

Hugues, Jonathan; Andrieu, Eric; Blanc, Christine; Cloué, Jean-Marc

The electrochemical behavior of alloy 718 in a chloride-containing boric acid solution was studied to determine the influence of chloride ions as contaminants of pool water of nuclear power plants on the corrosion behavior of the alloy. Experiments were performed at 20°C and 60°C with chloride concentrations from 1.5 to 15 000 ppm, using stationary measurements i.e. OCP versus time measurements and plotting of current-potential curves. After the electrochemical tests, the samples were observed using optical microscopy. Immersion tests in chloride-containing boric acid solutions were also carried out: samples were immersed for a time as long as 17 weeks at open circuit potential and their residual mechanical properties were measured. Results showed that, whatever the chloride concentration, there was no corrosion for samples immersed at open circuit potential. However, when the samples were polarized at high potentials, intergranular corrosion might be observed in occluded zones.

High speed hydraulically-actuated operating system for an electric circuit breaker

DOEpatents

Iman, I.

1983-06-07

This hydraulically-actuated operating system comprises a cylinder, a piston movable therein in an opening direction to open a circuit breaker, and an accumulator for supplying pressurized liquid to a breaker-opening piston-actuating space within the cylinder. A normally-closed valve between the accumulator and the actuating space is openable to allow pressurized liquid from the accumulator to flow through the valve into the actuating space to drive the piston in an opening direction. A dashpotting mechanism operating separately from the hydraulic actuating system is provided, thereby reducing flow restriction interference with breaker opening. 3 figs.

High speed hydraulically-actuated operating system for an electric circuit breaker

DOEpatents

Iman, Imdad

1983-06-07

This hydraulically-actuated operating system comprises a cylinder, a piston movable therein in an opening direction to open a circuit breaker, and an accumulator for supplying pressurized liquid to a breaker-opening piston-actuating space within the cylinder. A normally-closed valve between the accumulator and the actuating space is openable to allow pressurized liquid from the accumulator to flow through the valve into the actuating space to drive the piston in an opening direction. A dashpotting mechanism operating separately from the hydraulic actuating system is provided, thereby reducing flow restriction interference with breaker opening.

Diminishing detonator effectiveness through electromagnetic effects

DOEpatents

Schill, Jr, Robert A.

2016-09-20

An inductively coupled transmission line with distributed electromotive force source and an alternative coupling model based on empirical data and theory were developed to initiate bridge wire melt for a detonator with an open and a short circuit detonator load. In the latter technique, the model was developed to exploit incomplete knowledge of the open circuited detonator using tendencies common to all of the open circuit loads examined. Military, commercial, and improvised detonators were examined and modeled. Nichrome, copper, platinum, and tungsten are the detonator specific bridge wire materials studied. The improvised detonators were made typically made with tungsten wire and copper (.about.40 AWG wire strands) wire.

Methods for improving solar cell open circuit voltage

DOEpatents

Jordan, John F.; Singh, Vijay P.

1979-01-01

A method for producing a solar cell having an increased open circuit voltage. A layer of cadmium sulfide (CdS) produced by a chemical spray technique and having residual chlorides is exposed to a flow of hydrogen sulfide (H.sub.2 S) heated to a temperature of 400.degree.-600.degree. C. The residual chlorides are reduced and any remaining CdCl.sub.2 is converted to CdS. A heterojunction is formed over the CdS and electrodes are formed. Application of chromium as the positive electrode results in a further increase in the open circuit voltage available from the H.sub.2 S-treated solar cell.

Biocompatible circuit-breaker chip for thermal management of biomedical microsystems

NASA Astrophysics Data System (ADS)

Luo, Yi; Dahmardeh, Masoud; Takahata, Kenichi

2015-05-01

This paper presents a thermoresponsive micro circuit breaker for biomedical applications specifically targeted at electronic intelligent implants. The circuit breaker is micromachined to have a shape-memory-alloy cantilever actuator as a normally closed temperature-sensitive switch to protect the device of interest from overheating, a critical safety feature for smart implants including those that are electrothermally driven with wireless micro heaters. The device is fabricated in a size of 1.5  ×  2.0  ×  0.46 mm3 using biocompatible materials and a chip-based titanium package, exhibiting a nominal cold-state resistance of 14 Ω. The breaker rapidly enters the full open condition when the chip temperature exceeds 63 °C, temporarily breaking the circuit of interest to lower its temperature until chip temperature drops to 51 °C, at which the breaker closes the circuit to allow current to flow through it again, physically limiting the maximum temperature of the circuit. This functionality is tested in combination with a wireless resonant heater powered by radio-frequency electromagnetic radiation, demonstrating self-regulation of heater temperature. The developed circuit-breaker chip operates in a fully passive manner that removes the need for active sensor and circuitry to achieve temperature regulation in a target device, contributing to the miniaturization of biomedical microsystems including electronic smart implants where thermal management is essential.

Finite size effects in ferroelectric-semiconductor thin films under open-circuit electric boundary conditions

DOE PAGES

Eliseev, Eugene A.; Kalinin, Sergei V.; Morozovska, Anna N.

2015-01-21

General features of finite size effects in the ferroelectric-semiconductor film under open-circuit electric boundary conditions are analyzed using Landau-Ginzburg-Devonshire theory and continuum media electrostatics. The temperature dependence of the film critical thickness, spontaneous polarization and depolarization field profiles of the open-circuited films are found to be significantly different from the characteristics of short-circuited ones. In particular, we predict the re-entrant type transition boundary between the mono-domain and poly-domain ferroelectric states due to reduced internal screening efficiency and analyzed possible experimental scenarios created by this mechanism. Performed analysis is relevant for the quantitative description of free-standing ferroelectric films phase diagrams andmore » polar properties. Also our results can be useful for the explanation of the scanning-probe microscopy experiments on free ferroelectric surfaces.« less

Rational Design of High-Performance Wide-Bandgap (≈2 eV) Polymer Semiconductors as Electron Donors in Organic Photovoltaics Exhibiting High Open Circuit Voltages (≈1 V).

PubMed

Chochos, Christos L; Katsouras, Athanasios; Gasparini, Nicola; Koulogiannis, Chrysanthos; Ameri, Tayebeh; Brabec, Christoph J; Avgeropoulos, Apostolos

2017-01-01

Systematic optimization of the chemical structure of wide-bandgap (≈2.0 eV) "donor-acceptor" copolymers consisting of indacenodithiophene or indacenodithieno[3,2-b]thiophene as the electron-rich unit and thieno[3,4-c]pyrrole-4,6-dione as the electron-deficient moiety in terms of alkyl side chain engineering and distance of the electron-rich and electron-deficient monomers within the repeat unit of the polymer chain results in high-performance electron donor materials for organic photovoltaics. Specifically, preliminary results demonstrate extremely high open circuit voltages (V oc s) of ≈1.0 V, reasonable short circuit current density (J sc ) of around 11 mA cm -2 , and moderate fill factors resulting in efficiencies close to 6%. All the devices are fabricated in an inverted architecture with the photoactive layer processed by doctor blade equipment, showing the compatibility with roll-to-roll large-scale manufacturing processes. From the correlation of the chemical structure-optoelectronic properties-photovoltaic performance, a rational guide toward further optimization of the chemical structure in this family of copolymers, has been achieved. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nightside Magnetosphere-Ionosphere Current Circuit: Implications for Auroral Streamers and Pi2 Pulsations

NASA Astrophysics Data System (ADS)

Ohtani, S.; Uozumi, T.

2018-01-01

We investigate the electrodynamic coupling of the nightside magnetosphere-ionosphere system using the analogy of a current circuit. In our model circuit the generator drives a constant current, which flows through the magnetotail and ionosphere branches. The magnetotail branch has a capacitor C and resistor RT, whereas the ionospheric branch has an inductor L and resistor RI. Each element is physically described with local quantities and geometries. For RT ≪ RI the electric circuit is characterized by three time constants: τCR(=CRT), τLC= LC, and τL/R(=L/RI). It is found that τCR is of the order of the ion gyroperiod in the plasma sheet, and τLC and τL/R correspond to the eigenperiod and decay time of the field line oscillation, respectively. Therefore, despite the variability of each circuit element, τCR ≪ τLC ≪ τL/R holds generally. It is found that under this condition the current circuit is characterized as overdamped, and its decay time constant is given by τL/R. RI is smaller, and therefore, τL/R is longer as the structure is more elongated in the direction of convection. This may explain why the auroral streamers, which are considered to be the ionospheric manifestation of fast flows in the plasma sheet, last significantly longer than the flows themselves. Another application is the Pi2 pulsations at the substorm onsets. If RT increases by a factor of τLC/τCR, the system indeed becomes underdamped, and the oscillation period is given by 2πτLC. It is suggested that the substorm initiation is a distinct process with a significant enhancement of tail resistivity in a localized area.

Method of forming through substrate vias (TSVs) and singulating and releasing die having the TSVs from a mechanical support substrate

DOEpatents

Okandan, Murat; Nielson, Gregory N

2014-12-09

Accessing a workpiece object in semiconductor processing is disclosed. The workpiece object includes a mechanical support substrate, a release layer over the mechanical support substrate, and an integrated circuit substrate coupled over the release layer. The integrated circuit substrate includes a device layer having semiconductor devices. The method also includes etching through-substrate via (TSV) openings through the integrated circuit substrate that have buried ends at or within the release layer including using the release layer as an etch stop. TSVs are formed by introducing one or more conductive materials into the TSV openings. A die singulation trench is etched at least substantially through the integrated circuit substrate around a perimeter of an integrated circuit die. The integrated circuit die is at least substantially released from the mechanical support substrate.

Using a small hybrid pulse power transformer unit as component of a high-current opening switch for a railgun

NASA Astrophysics Data System (ADS)

Leung, E. M. W.; Bailey, R. E.; Michels, P. H.

1989-03-01

The hybrid pulse power transformer (HPPT) is a unique concept utilizing the ultrafast superconducting-to-normal transition process of a superconductor. When used in the form of a hybrid transformer current-zero switch (HTCS), this creates an approach in which the large, high-power, high-current opening switch in a conventional railgun system can be eliminated. This represents an innovative application of superconductivity to pulsed power conditioning required for the Strategic Defense Initiative (SDI). The authors explain the working principles of a 100-KJ unit capable of switching up to 500 kA at a frequency of 0.5 Hz and with a system efficiency of greater than 90 percent. Circuit analysis using a computer code called SPICE PLUS was used to verify the HTCS concept. This concept can be scaled up to applications in the several mega-ampere levels.

Elements configuration of the open lead test circuit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fukuzaki, Yumi, E-mail: 14514@sr.kagawa-nct.ac.jp; Ono, Akira

In the field of electronics, small electronic devices are widely utilized because they are easy to carry. The devices have various functions by user’s request. Therefore, the lead’s pitch or the ball’s pitch have been narrowed and high-density printed circuit board has been used in the devices. Use of the ICs which have narrow lead pitch makes normal connection difficult. When logic circuits in the devices are fabricated with the state-of-the-art technology, some faults have occurred more frequently. It can be divided into types of open faults and short faults. We have proposed a new test method using a testmore » circuit in the past. This paper propose elements configuration of the test circuit.« less

[Anesthesia ventilators].

PubMed

Otteni, J C; Beydon, L; Cazalaà, J B; Feiss, P; Nivoche, Y

1997-01-01

To review anaesthesia ventilators in current use in France by categories of ventilators. References were obtained from computerized bibliographic search. (Medline), recent review articles, the library of the service and personal files. Anaesthesia ventilators can be allocated into three groups, depending on whether they readminister expired gases or not or allow both modalities. Contemporary ventilators provide either constant volume ventilation, or constant pressure ventilation, with or without a pressure plateau. Ventilators readministering expired gases after CO2 absorption, or closed circuit ventilators, are either of a double- or a single-circuit design. Double-circuit ventilators, or pneumatical bag or bellows squeezers, or bag-in-bottle or bellows-in-bottle (or box) ventilators, consist of a primary, or driving circuit (bottle or box) and a secondary or patient circuit (including a bag or a bellows or membrane chambers). Bellows-in-bottle ventilators have either standing bellows ascending at expiration, or hanging bellows, descending at expiration. Ascending bellows require a positive pressure of about 2 cmH2O throughout exhalation to allow the bellows to refill. The expired gas volume is a valuable indicator for leak and disconnection. Descending bellows generate a slight negative pressure during exhalation. In case of leak or disconnection they aspirate ambient air and cannot act therefore as an indicator for integrity of the circuit and the patient connection. Closed circuit ventilators with a single-circuit (patient circuit) include a insufflating device consisting either in a bellows or a cylinder with a piston, operated by a electric or pneumatic motor. As the hanging bellows of the double circuit ventilators, they generate a slight negative pressure during exhalation and aspirate ambient air in case of leak or disconnection. Ventilators not designed for the readministration of expired gases, or open circuit ventilators, are generally stand-alone mechanical ventilators modified to allow the administration of inhalational anaesthetic agents.

47 CFR 78.51 - Remote control operation.

Code of Federal Regulations, 2010 CFR

2010-10-01

... necessary to insure proper operation. (4) The control circuits shall be so designed and installed that short circuits, open circuits, other line faults, or any other cause which would result in loss of control of the...

Novel patterning of CdS / CdTe thin film with back contacts for photovoltaic application

NASA Astrophysics Data System (ADS)

Ilango, Murugaiya Sridar; Ramasesha, Sheela K.

2018-04-01

The heterostructure of patterned CdS / CdTe thin films with back contact have been devised with electron beam lithography and fabricated using sputter deposition technique. The metallic contacts for n-CdS and p-CdTe are patterned such that both are placed at the bottom of the cell. This avoids losses due to contact shading and increases absorption in the window layer. Patterning of the device surface helps in increasing the junction area which can modulate the absorption of more number of photons due to total internal reflection. Computing the surface area between a planar and a patterned device has revealed 133% increase in the junction area. The physical and optical properties of the sputter-deposited CdS / CdTe layers are also presented. J- V characteristics of the solar cell showed the fill factor to be 25.9%, open circuit voltage to be 17 mV and short-circuit current density to be 113.68 A/m2. The increase in surface area is directly related to the increase in the short circuit current of the photovoltaic cell, which is observed from the results of simulated model in Atlas / Silvaco.

High-Throughput Fabrication of Flexible and Transparent All-Carbon Nanotube Electronics.

PubMed

Chen, Yong-Yang; Sun, Yun; Zhu, Qian-Bing; Wang, Bing-Wei; Yan, Xin; Qiu, Song; Li, Qing-Wen; Hou, Peng-Xiang; Liu, Chang; Sun, Dong-Ming; Cheng, Hui-Ming

2018-05-01

This study reports a simple and effective technique for the high-throughput fabrication of flexible all-carbon nanotube (CNT) electronics using a photosensitive dry film instead of traditional liquid photoresists. A 10 in. sized photosensitive dry film is laminated onto a flexible substrate by a roll-to-roll technology, and a 5 µm pattern resolution of the resulting CNT films is achieved for the construction of flexible and transparent all-CNT thin-film transistors (TFTs) and integrated circuits. The fabricated TFTs exhibit a desirable electrical performance including an on-off current ratio of more than 10 5 , a carrier mobility of 33 cm 2 V -1 s -1 , and a small hysteresis. The standard deviations of on-current and mobility are, respectively, 5% and 2% of the average value, demonstrating the excellent reproducibility and uniformity of the devices, which allows constructing a large noise margin inverter circuit with a voltage gain of 30. This study indicates that a photosensitive dry film is very promising for the low-cost, fast, reliable, and scalable fabrication of flexible and transparent CNT-based integrated circuits, and opens up opportunities for future high-throughput CNT-based printed electronics.

49 CFR 236.342 - Switch circuit controller.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 49 Transportation 4 2012-10-01 2012-10-01 false Switch circuit controller. 236.342 Section 236.342... Instructions § 236.342 Switch circuit controller. Switch circuit controller connected at the point to switch... corresponding to switch point closure when switch point is open one-fourth inch or more. Inspection and Tests ...

49 CFR 236.342 - Switch circuit controller.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 49 Transportation 4 2011-10-01 2011-10-01 false Switch circuit controller. 236.342 Section 236.342... Instructions § 236.342 Switch circuit controller. Switch circuit controller connected at the point to switch... corresponding to switch point closure when switch point is open one-fourth inch or more. Inspection and Tests ...

49 CFR 236.342 - Switch circuit controller.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 4 2010-10-01 2010-10-01 false Switch circuit controller. 236.342 Section 236.342... Instructions § 236.342 Switch circuit controller. Switch circuit controller connected at the point to switch... corresponding to switch point closure when switch point is open one-fourth inch or more. Inspection and Tests ...

49 CFR 236.342 - Switch circuit controller.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 49 Transportation 4 2013-10-01 2013-10-01 false Switch circuit controller. 236.342 Section 236.342... Instructions § 236.342 Switch circuit controller. Switch circuit controller connected at the point to switch... corresponding to switch point closure when switch point is open one-fourth inch or more. Inspection and Tests ...

49 CFR 236.342 - Switch circuit controller.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 49 Transportation 4 2014-10-01 2014-10-01 false Switch circuit controller. 236.342 Section 236.342... Instructions § 236.342 Switch circuit controller. Switch circuit controller connected at the point to switch... corresponding to switch point closure when switch point is open one-fourth inch or more. Inspection and Tests ...

Dynamically Movable Exhausting Emc Sealing System

DOEpatents

Barringer, Dennis R.; Seminaro, Edward J.; Toffler, Harold M.

2003-12-09

A docking apparatus for printed circuit boards including a cassette housing, having a housing base, a housing cover and a housing wall, wherein the housing base and the housing wall are disposed relative to each other so as to define a housing cavity for containing a printed circuit card and wherein the housing wall includes a cable opening disposed so as to be communicated with the housing cavity, a housing bezel, disposed relative to the cassette housing so as to be associated with the cable opening, the housing bezel includes an outer bezel having a first plurality of openings and an inner bezel having a second plurality of apertures, the inner bezel in electrical communication with the printed circuit card, wherein said housing bezel is removable, and an EMC gasket disposed between the outer and inner bezels of said housing bezel, the EMC gasket configured to provide a removable EMC seal proximate the cable opening while still allowing airflow through the first and second plurality of apertures having the EMC gasket therebetween. A docking apparatus for printed circuit boards including a cassette housing, having a housing base, a housing cover and a housing wall, wherein the housing base and the housing wall are disposed relative to each other so as to define a housing cavity for containing a printed circuit card and wherein the housing wall includes a cable opening disposed so as to be communicated with the housing cavity, a housing bezel, disposed relative to the cassette housing so as to be associated with the cable opening, the housing bezel includes an outer bezel having a first plurality of openings and an inner bezel having a second plurality of apertures, the inner bezel in electrical communication with the printed circuit card, wherein said housing bezel is removable, and an EMC gasket disposed between the outer and inner bezels of said housing bezel, the EMC gasket configured to provide a removable EMC seal proximate the cable opening while still allowing airflow through the first and second plurality of apertures having the EMC gasket therebetween.

30 CFR 75.900 - Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit...

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Low- and medium-voltage circuits serving three... STANDARDS-UNDERGROUND COAL MINES Underground Low- and Medium-Voltage Alternating Current Circuits § 75.900 Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit breakers...

30 CFR 77.900 - Low- and medium-voltage circuits serving portable or mobile three-phase alternating current...

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Low- and medium-voltage circuits serving... Medium-Voltage Alternating Current Circuits § 77.900 Low- and medium-voltage circuits serving portable or mobile three-phase alternating current equipment; circuit breakers. Low- and medium-voltage circuits...

30 CFR 75.900 - Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit...

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Low- and medium-voltage circuits serving three... STANDARDS-UNDERGROUND COAL MINES Underground Low- and Medium-Voltage Alternating Current Circuits § 75.900 Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit breakers...

30 CFR 75.900 - Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit...

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low- and medium-voltage circuits serving three... STANDARDS-UNDERGROUND COAL MINES Underground Low- and Medium-Voltage Alternating Current Circuits § 75.900 Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit breakers...

30 CFR 77.900 - Low- and medium-voltage circuits serving portable or mobile three-phase alternating current...

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low- and medium-voltage circuits serving... Medium-Voltage Alternating Current Circuits § 77.900 Low- and medium-voltage circuits serving portable or mobile three-phase alternating current equipment; circuit breakers. Low- and medium-voltage circuits...

30 CFR 77.900 - Low- and medium-voltage circuits serving portable or mobile three-phase alternating current...

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Low- and medium-voltage circuits serving... Medium-Voltage Alternating Current Circuits § 77.900 Low- and medium-voltage circuits serving portable or mobile three-phase alternating current equipment; circuit breakers. Low- and medium-voltage circuits...

Matlab-Excel Interface for OpenDSS

DOE Office of Scientific and Technical Information (OSTI.GOV)

The software allows users of the OpenDSS grid modeling software to access their load flow models using a GUI interface developed in MATLAB. The circuit definitions are entered into a Microsoft Excel spreadsheet which makes circuit creation and editing a much simpler process than the basic text-based editors used in the native OpenDSS interface. Plot tools have been developed which can be accessed through a MATLAB GUI once the desired parameters have been simulated.

Zn/gelled 6 M KOH/O 2 zinc-air battery

NASA Astrophysics Data System (ADS)

Mohamad, A. A.

The gel electrolyte for the zinc-air cell was prepared by mixing hydroponics gel with a 6 M potassium hydroxide aqueous solution. The self-discharge of cells was characterized by measuring the open-circuit voltage. The effect of a discharge rate of 50 mA constant current on cell voltage and plateau hour, as well as the voltage-current and current density-power density were measured and analysed. The electrode degradation after discharge cycling was characterized by structural and surface methods. The oxidation of the electrode surface further blocked the utilization of the Zn anode and was identified as a cause for the failure of the cell.

Theoretical and experimental investigation of 'grating' type photovoltaic cells

NASA Technical Reports Server (NTRS)

Loferski, J. J.; Crisman, E. E.; Armitage, W.; Chen, L. Y.

1974-01-01

The fabrication procedure and properties of 'grating' cells made by forming a fine grating pattern of aluminum alloyed into n-silicon wafers are described. The finest grating lines achieved in the cells described were 5 microns; the smallest spacing was about 15 microns. The best temperature for alloying was found to be about 600 C, a bit above the Si-Al eutectic temperature (576 C). The short-circuit current obtained from the best of these cells exposed to 100 mW/sq cm of (simulated air mass zero) illumination was at least equal to that obtained from conventional diffused cells, but their open-circuit voltage was lower. Their quantum yield was strongly blue-shifted; it was flat from 4000 to 8500 A.

Status of power generation experiments in the NASA Lewis closed cycle MHD facility

NASA Technical Reports Server (NTRS)

Sovie, R. J.; Nichols, L. D.

1971-01-01

The design and operation of the closed cycle MHD facility is discussed and results obtained in recent experiments are presented. The main components of the facility are a compressor, recuperative heat exchanger, heater, nozzle, MHD channel with 28 pairs of thoriated tungsten electrodes, cesium condenser, and an argon cooler. The facility has been operated at temperatures up to 2100 K with a cesium-seeded argon working fluid. At low magnetic field strengths, the open circuit voltage, Hall voltage and short circuit current obtained are 90, 69, and 47 percent of the theoretical equilibrium values, respectively. Comparison of this data with a wall and boundary layer leakage theory indicates that the generator has shorting paths in the Hall direction.

A simple theoretical model for ⁶³Ni betavoltaic battery.

PubMed

Zuo, Guoping; Zhou, Jianliang; Ke, Guotu

2013-12-01

A numerical simulation of the energy deposition distribution in semiconductors is performed for ⁶³Ni beta particles. Results show that the energy deposition distribution exhibits an approximate exponential decay law. A simple theoretical model is developed for ⁶³Ni betavoltaic battery based on the distribution characteristics. The correctness of the model is validated by two literature experiments. Results show that the theoretical short-circuit current agrees well with the experimental results, and the open-circuit voltage deviates from the experimental results in terms of the influence of the PN junction defects and the simplification of the source. The theoretical model can be applied to ⁶³Ni and ¹⁴⁷Pm betavoltaic batteries. Copyright © 2013 Elsevier Ltd. All rights reserved.

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact

PubMed Central

2015-01-01

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm2 and a high power conversion efficiency of 19.2%. PMID:25679010

[Photovoltaic character of organic EL devices MEH-PPV/Alq3].

PubMed

Lin, Peng; Liang, Chun-Jun; Deng, Zhen-Bo; Xiong, De-Ping; Wang, Li; Zhang, Zhi-Feng; Zhang, Xi-Qing

2005-01-01

An organic photovoltaic(PV) cell, ITO/MEH-PPV/Alq3/LiF/Al, was fabricated. The MEH-PPV and Alq3 are the electron-acceptor and donor in the cell, respectively. The respond region matchs the adsorption of Alq3 film. Under UV light with 0.5 mW x cm(-2), the cell shows a short-circuit current of 2.4 microA x cm(-2), open-circuit voltage of 2.6 V, a fill factor of 0.71, and a power conversion efficiency of 0.9%. It was found that the PV cell indicates electroluminescence (EL) performance and could emit orange light at DC voltage. The maximum luminance is about 1 000 cd x cm(-2) at 15 V.

A method for determining the conversion efficiency of multiple-cell photovoltaic devices

NASA Astrophysics Data System (ADS)

Glatfelter, Troy; Burdick, Joseph

A method for accurately determining the conversion efficiency of any multiple-cell photovoltaic device under any arbitrary reference spectrum is presented. This method makes it possible to obtain not only the short-circuit current, but also the fill factor, the open-circuit voltage, and hence the conversion efficiency of a multiple-cell device under any reference spectrum. Results are presented which allow a comparison of the I-V parameters of two-terminal, two- and three-cell tandem devices measured under a multiple-source simulator with the same parameters measured under different reference spectra. It is determined that the uncertainty in the conversion efficiency of a multiple-cell photovoltaic device obtained with this method is less than +/-3 percent.

Properties of p-n-junctions formed by a laser irradiation of a surface of n-Cd1-xZnxTe single crystal

NASA Astrophysics Data System (ADS)

Khomyak, V. V.; Ilashchuk, M. I.; Shtepliuk, I. I.

2015-03-01

Photosensitive barrier structures were fabricated by high-power pulsed laser irradiation of a freshly-cleaved surface of п-type bulk Cd1-xZnxTe substrates. Their electrical properties were investigated and discussed. Dominant carrier mechanisms at a forward and a reverse bias in terms of a recombination and tunnel-recombination model were analyzed. At the illumination reaching 100 mW · cm-2, these surface-barrier р-Cd1-хZnхTe/п-Cd1-хZnхTe structures were possessed by the following photoelectric parameters: open-circuit voltage Voc = 0.61 V, short-circuit current Isc = 0.21 mА and fill factor FF = 0.49, respectively.

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact.

PubMed

Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; Chen, Kevin; Hettick, Mark; Zheng, Maxwell; Chen, Cheng-Ying; Kiriya, Daisuke; Javey, Ali

2014-12-17

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO 2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency of 19.2%.

Electrical properties of graphene film for counter electrode in dye sensitized solar cells

NASA Astrophysics Data System (ADS)

Khalifa, Ali; Shafie, S.; Hasan, W. Z. W.; Lim, H. N.; Rusop, M.; Samaila, Buda

2018-05-01

A graphene counter electrode for dye-sensitized solar cell was prepared simply by drop casting method on a conducting FTO glass at room temperature. Raman spectroscopy was used to study the defection in the graphene films. The sheet resistance was also measured and recoded minimum value of 7.04 Ω/□ at 22.19µm thickness. The casted films show good adhesion to substrates with low defects. A DSSC based on graphene counter electrode demonstrates reasonable conversion efficiency of 2.78% with short circuit current of 7.60mA, open circuit voltage of 0.69V and fill factor of 0.52. The high conductivity and low defects render the prepared graphene dispersion for DSSCs' CE application.

Interplay of oxygen-evolution kinetics and photovoltaic power curves on the construction of artificial leaves

PubMed Central

Surendranath, Yogesh; Bediako, D. Kwabena; Nocera, Daniel G.

2012-01-01

An artificial leaf can perform direct solar-to-fuels conversion. The construction of an efficient artificial leaf or other photovoltaic (PV)-photoelectrochemical device requires that the power curve of the PV material and load curve of water splitting, composed of the catalyst Tafel behavior and cell resistances, be well-matched near the thermodynamic potential for water splitting. For such a condition, we show here that the current density-voltage characteristic of the catalyst is a key determinant of the solar-to-fuels efficiency (SFE). Oxidic Co and Ni borate (Co-Bi and Ni-Bi) thin films electrodeposited from solution yield oxygen-evolving catalysts with Tafel slopes of 52 mV/decade and 30 mV/decade, respectively. The consequence of the disparate Tafel behavior on the SFE is modeled using the idealized behavior of a triple-junction Si PV cell. For PV cells exhibiting similar solar power-conversion efficiencies, those displaying low open circuit voltages are better matched to catalysts with low Tafel slopes and high exchange current densities. In contrast, PV cells possessing high open circuit voltages are largely insensitive to the catalyst’s current density-voltage characteristics but sacrifice overall SFE because of less efficient utilization of the solar spectrum. The analysis presented herein highlights the importance of matching the electrochemical load of water-splitting to the onset of maximum current of the PV component, drawing a clear link between the kinetic profile of the water-splitting catalyst and the SFE efficiency of devices such as the artificial leaf. PMID:22689962

[Measurements of the flux densities of static magnetic fields generated by two types of dental magnetic attachments and their retentive forces].

PubMed

Xu, Chun; Chao, Yong-lie; Du, Li; Yang, Ling

2004-05-01

To measure and analyze the flux densities of static magnetic fields generated by two types of commonly used dental magnetic attachments and their retentive forces, and to provide guidance for the clinical application of magnetic attachments. A digital Gaussmeter was used to measure the flux densities of static magnetic fields generated by two types of magnetic attachments, under four circumstances: open-field circuit; closed-field circuit; keeper and magnet slid laterally for a certain distance; and existence of air gap between keeper and magnet. The retentive forces of the magnetic attachments in standard closed-field circuit, with the keeper and magnet sliding laterally for a certain distance or with a certain air gap between keeper and magnet were measured by a tensile testing machine. There were flux leakages under both the open-field circuit and closed-field circuit of the two types of magnetic attachments. The flux densities on the surfaces of MAGNEDISC 800 (MD800) and MAGFIT EX600W (EX600) magnetic attachments under open-field circuit were 275.0 mT and 147.0 mT respectively. The flux leakages under closed-field circuit were smaller than those under open-field circuit. The respective flux densities on the surfaces of MD800 and EX600 magnetic attachments decreased to 11.4 mT and 4.5 mT under closed-field circuit. The flux density around the magnetic attachment decreased as the distance from the surface of the attachment increased. When keeper and magnet slid laterally for a certain distance or when air gap existed between keeper and magnet, the flux leakage increased in comparison with that under closed-field circuit. Under the standard closed-field circuit, the two types of magnetic attachments achieved the largest retentive forces. The retentive forces of MD800 and EX600 magnetic attachments under the standard closed-field circuit were 6.20 N and 4.80 N respectively. The retentive forces decreased with the sliding distance or with the increase of air gap between keeper and magnet. The magnetic attachments have flux leakages. When they are used in patients' oral cavities, if keeper and magnet are not attached accurately, the flux leakage will increase, and at the same time the retentive force will decrease. Therefore the keeper and magnet should be attached accurately in clinical application.

An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Y. T., E-mail: yasun@kth.se; Omanakuttan, G.; Lourdudoss, S.

2015-05-25

An n-InP/p-Si heterojunction photodiode fabricated by corrugated epitaxial lateral overgrowth (CELOG) method is presented. N-InP/p-Si heterojunction has been achieved from a suitable pattern containing circular shaped openings in a triangular lattice on the InP seed layer on p-Si substrate and subsequent CELOG of completely coalesced n-InP. To avoid current path through the seed layer in the final photodiode, semi-insulating InP:Fe was grown with adequate thickness prior to n-InP growth in a low pressure hydride vapor phase epitaxy reactor. The n-InP/p-Si heterointerface was analyzed by scanning electron microscopy and Raman spectroscopy. Room temperature cross-sectional photoluminescence (PL) mapping illustrates the defect reductionmore » effect in InP grown on Si by CELOG method. The InP PL intensity measured above the InP/Si heterojunction is comparable to that of InP grown on a native planar substrate indicating low interface defect density of CELOG InP despite of 8% lattice mismatch with Si. The processed n-InP/p-Si heterojunction photodiodes show diode characteristics from the current-voltage (I-V) measurements with a dark current density of 0.324 mA/cm{sup 2} at a reverse voltage of −1 V. Under the illumination of AM1.5 conditions, the InP/Si heterojunction photodiode exhibited photovoltaic effect with an open circuit voltage of 180 mV, a short circuit current density of 1.89 mA/cm{sup 2}, an external quantum efficiency of 4.3%, and an internal quantum efficiency of 6.4%. This demonstration of epitaxially grown InP/Si heterojunction photodiode will open the door for low cost and high efficiency solar cells and photonic integration of III-Vs on silicon.« less

Recent developments in Lambda networking

NASA Astrophysics Data System (ADS)

de Laat, C.; Grosso, P.

About 6 years ago the first baby-steps were made on opening up dark fiber and DWDM infrastructure for direct use by ISP's after the transformation of the old style Telecom sector into a market driven business. Since then Lambda workshops, community groups like GLIF and a number of experiments have led to many implementations of hybrid national research and education networks and lightpath-based circuit exchanges as pioneered by SURFnet in GigaPort and NetherLight in collaboration with StarLight in Chicago and Canarie in Canada. This article looks back on those developments, describes some current open issues and research developments and proposes a concept of terabit networking.

Direct imaging of Cl- and Cu-induced short-circuit efficiency changes in CdTe solar cells

DOE PAGES

Poplawsky, Jonathan D.; Parish, Chad M.; Leonard, Donovan N.; ...

2014-05-30

To achieve high-efficiency polycrystalline CdTe-based thin-film solar cells, the CdTe absorbers must go through a post-deposition CdCl 2 heat treatment followed by a Cu diffusion step. To better understand the roles of each treatment with regard to improving grains, grain boundaries, and interfaces, CdTe solar cells with and without Cu diffusion and CdCl 2 heat treatments are investigated using cross-sectional electron beam induced current, electron backscatter diffraction, and scanning transmission electron microscope techniques. The evolution of the cross-sectional carrier collection profile due to these treatments that cause an increase in short-circuit current and higher open-circuit voltage are identified. Additionally, anmore » increased carrier collection in grain boundaries after either/both of these treatments is revealed. The increased current at the grain boundaries is shown to be due to the presence of a space charge region with an intrinsic carrier collection profile width of ≈350 nm. Scanning transmission electron microscope electron-energy loss spectroscopy shows a decreased Te and increased Cl concentration in grain boundaries after treatment, which causes the inversion. Furthermore, each treatment improves the overall carrier collection efficiency of the cell separately, and, therefore, the benefits realized by each treatment are shown to be independent of each other.« less

Multi-temperature state-dependent equivalent circuit discharge model for lithium-sulfur batteries

NASA Astrophysics Data System (ADS)

Propp, Karsten; Marinescu, Monica; Auger, Daniel J.; O'Neill, Laura; Fotouhi, Abbas; Somasundaram, Karthik; Offer, Gregory J.; Minton, Geraint; Longo, Stefano; Wild, Mark; Knap, Vaclav

2016-10-01

Lithium-sulfur (Li-S) batteries are described extensively in the literature, but existing computational models aimed at scientific understanding are too complex for use in applications such as battery management. Computationally simple models are vital for exploitation. This paper proposes a non-linear state-of-charge dependent Li-S equivalent circuit network (ECN) model for a Li-S cell under discharge. Li-S batteries are fundamentally different to Li-ion batteries, and require chemistry-specific models. A new Li-S model is obtained using a 'behavioural' interpretation of the ECN model; as Li-S exhibits a 'steep' open-circuit voltage (OCV) profile at high states-of-charge, identification methods are designed to take into account OCV changes during current pulses. The prediction-error minimization technique is used. The model is parameterized from laboratory experiments using a mixed-size current pulse profile at four temperatures from 10 °C to 50 °C, giving linearized ECN parameters for a range of states-of-charge, currents and temperatures. These are used to create a nonlinear polynomial-based battery model suitable for use in a battery management system. When the model is used to predict the behaviour of a validation data set representing an automotive NEDC driving cycle, the terminal voltage predictions are judged accurate with a root mean square error of 32 mV.

Leakage Current Induced by Energetic Disorder in Organic Bulk Heterojunction Solar Cells: Comprehending the Ultrahigh Loss of Open-Circuit Voltage at Low Temperatures

NASA Astrophysics Data System (ADS)

Yang, Wenchao; Luo, Yongsong; Guo, Pengfei; Sun, Haibin; Yao, Yao

2017-04-01

The open-circuit voltage (Voc ) of organic solar cells generally approaches its maximum obtainable values as the temperature decreases. However, recent experiments have revealed that the Voc may suffer from an ultrahigh loss at low temperatures. In order to verify this explanation and investigate the impacts of energetic disorder on the temperature-dependent behaviors of the Voc in general, we calculate the Voc-T plots with the drift-diffusion method under various device working parameters. With the disorder being incorporated into the device model by considering the disorder-suppressed (temperature-dependent) charge-carrier mobilities, it is found that the ultrahigh Voc losses cannot be reproduced under the Onsager-Braun-type charge generation rate. With the charge generation rate being constant or weakly dependent on temperature, for nonselective contacts, the Voc reduces drastically at low temperatures, while for selective contacts, the Voc increases monotonically with decreasing temperature. With higher carrier mobilities or smaller device thicknesses, the ultrahigh loss occurs at lower temperatures. The mechanism is that, since the disorder-suppressed charge mobilities give rise to both low charge-extraction efficiency and small bimolecular recombination rate, plenty of charge carriers can be extracted from the wrong electrode and can form a large leakage current, which counteracts the majority-carrier current and reduces the Voc at low temperatures. Our results thus highlight the essential role of charge-carrier kinetics, except for the charge-filling effect, on dominating the disorder-induced Voc losses.

Face-to-face confrontation: effects of closed-circuit technology on children's eyewitness testimony and jurors' decisions.

PubMed

Goodman, G S; Tobey, A E; Batterman-Faunce, J M; Orcutt, H; Thomas, S; Shapiro, C; Sachsenmaier, T

1998-04-01

The present study was designed to examine effects of closed-circuit technology on children's testimony and jurors' perceptions of child witnesses. For the study, a series of elaborately staged mock trials was held. First, 5- to 6-year-old and 8- to 9-year-old children individually participated in a play session with an unfamiliar male confederate. Approximately 2 weeks later, children individually testified about the event at downtown city courtroom. Mock juries composed of community recruits viewed the trials, with the child's testimony presented either live in open court or over closed-circuit television. Mock jurors made ratings concerning the child witness and the defendant, and deliberated to reach a verdict. Results indicated that overall, older children were more accurate witnesses than younger children. However, older, not younger children produced more inaccurate information in free recall. Compared to live testimony in open court, use of closed-circuit technology led to decreased suggestibility for younger children. Testifying in open court was also associated with children experiencing greater pretrial anxiety. Closed-circuit technology did not diminish fact finders' abilities to discriminate accurate from inaccurate child testimony, nor did it directly bias jurors against the defendant. However, closed-circuit testimony biased jurors against child witnesses. Moreover, jurors tended to base their impressions of witness credibility on perceived confidence and consistency. Implications for the use of closed-circuit technology when children testify are discussed.

Numerical modeling of high-voltage circuit breaker arcs and their interraction with the power system

NASA Astrophysics Data System (ADS)

Orama, Lionel R.

In this work the interaction between series connected gas and vacuum circuit breaker arcs has been studied. The breakdown phenomena in vacuum interrupters during the post arc current period have been of special interest. Numerical models of gas and vacuum arcs were developed in the form of black box models. Especially, the vacuum post arc model was implemented by combining the existing transition model with an ion density function and expressions for the breakdown mechanisms. The test series studied reflect that for electric fields on the order of 10sp7V/m over the anode, the breakdown of the vacuum gap can result from a combination of both thermal and electrical stresses. For a particular vacuum device, the vacuum model helps to find the interruption limits of the electric field and power density over the anode. The series connection of gas and vacuum interrupters always performs better than the single gas device. Moreover, to take advantage of the good characteristics of both devices, the time between the current zero crossing in each interrupter can be changed. This current zero synchronization is controlled by changing the capacitance in parallel to the gas device. This gas/vacuum interrupter is suitable for interruption of very stressful short circuits in which the product of the dI/dt before current zero and the dV/dt after current zero is very high. Also, a single SF6 interrupter can be replaced by an air circuit breaker of the same voltage rating in series with a vacuum device without compromising the good performance of the SF6 device. Conceptually, a series connected vacuum device can be used for high voltage applications with equal distribution of electrical stresses between the individual interrupters. The equalization can be made by a sequential opening of the individual contact pairs, beginning with the interruptors that are closer to ground potential. This could eliminate the use of grading capacitors.

Performance degradation of photovoltaic modules at different sites

NASA Astrophysics Data System (ADS)

Arab, A. Hadj; Mahammed, I. Hadj; Ould Amrouche, S.; Taghezouit, B.; Yassaa, N.

2018-05-01

In this work are presented results of electrical performance measurements of 120 crystalline silicon PV modules following long-term outdoor measurements. A set of 90 PV modules represent the first grid-connected photovoltaic (PV) system in Algeria, installed at the level of the “Centre de Développement des Energies Renouvelables” (CDER) site (Mediterranean coast), Bouzareah. The other 30 PV modules were undertaken in an arid area of the desert region of Ghardaïa site, about 600 km south of Algiers, with measurements collected from different applications. Following different characterization tests, we noticed that the all tested PV modules kept their power-generating rate except a slight reduction. Therefore, a mathematical model has been used to carry out PV module testing at different irradiance and temperature levels. Hence, different PV module parameters have been calculated from the recorded values of the open-circuit voltage, the short-circuit current, the voltage and current at maximum power point. The electrical measurements have indicated different degradations of current-voltage parameters. All the PV modules stated a decrease in the nominal power, which is variable from one module to another.

CIRCUITS FOR CURRENT MEASUREMENTS

DOEpatents

Cox, R.J.

1958-11-01

Circuits are presented for measurement of a logarithmic scale of current flowing in a high impedance. In one form of the invention the disclosed circuit is in combination with an ionization chamber to measure lonization current. The particular circuit arrangement lncludes a vacuum tube having at least one grid, an ionization chamber connected in series with a high voltage source and the grid of the vacuum tube, and a d-c amplifier feedback circuit. As the ionization chamber current passes between the grid and cathode of the tube, the feedback circuit acts to stabilize the anode current, and the feedback voltage is a measure of the logaritbm of the ionization current.

Exact solution of three-dimensional transport problems using one-dimensional models. [in semiconductor devices

NASA Technical Reports Server (NTRS)

Misiakos, K.; Lindholm, F. A.

1986-01-01

Several parameters of certain three-dimensional semiconductor devices including diodes, transistors, and solar cells can be determined without solving the actual boundary-value problem. The recombination current, transit time, and open-circuit voltage of planar diodes are emphasized here. The resulting analytical expressions enable determination of the surface recombination velocity of shallow planar diodes. The method involves introducing corresponding one-dimensional models having the same values of these parameters.

Faster Hall-Effect Current-Measuring Circuit

NASA Technical Reports Server (NTRS)

Sullender, Craig C.; Johnson, Daniel D.; Walker, Daniel D.

1993-01-01

Current-measuring circuit operates on Hall-effect-sensing and magnetic-field-nulling principles similar to those described in article, "Nulling Hall-Effect Current-Measuring Circuit" (LEW-15023), but simpler and responds faster. Designed without feedback loop, and analog pulse-width-modulated output indicates measured current. Circuit measures current at frequency higher than bandwidth of its Hall-effect sensor.

Study of relationships of material properties and high efficiency solar cell performance on material composition

NASA Technical Reports Server (NTRS)

Sah, C. T.

1983-01-01

The performance improvements obtainable from extending the traditionally thin back-surface-field (BSF) layer deep into the base of silicon solar cells under terrestrial solar illumination (AM1) are analyzed. This extended BSF cell is also known as the back-drift-field cell. About 100 silicon cells were analyzed, each with a different emitter or base dopant impurity distribution whose selection was based on physically anticipated improvements. The four principal performance parameters (the open-circuit voltage, the short-circuit current, the fill factor, and the maximum efficiency) are computed using a FORTRAN program, called Circuit Technique for Semiconductor-device Analysis, CTSA, which numerically solves the six Shockley Equations under AM1 solar illumination at 88.92 mW/cm, at an optimum cell thickness of 50 um. The results show that very significant performance improvements can be realized by extending the BSF layer thickness from 2 um (18% efficiency) to 40 um (20% efficiency).

A wireless transmission system powered by an enzyme biofuel cell implanted in an orange.

PubMed

MacVittie, Kevin; Conlon, Tyler; Katz, Evgeny

2015-12-01

A biofuel cell composed of catalytic electrodes made of "buckypaper" modified with PQQ-dependent glucose dehydrogenase and FAD-dependent fructose dehydrogenase on the anode and with laccase on the cathode was used to activate a wireless information transmission system. The cathode/anode pair was implanted in orange pulp extracting power from its content (glucose and fructose in the juice). The open circuit voltage, Voc, short circuit current density, jsc, and maximum power produced by the biofuel cell, Pmax, were found as ca. 0.6 V, ca. 0.33 mA·cm(-2) and 670 μW, respectively. The voltage produced by the biofuel cell was amplified with an energy harvesting circuit and applied to a wireless transmitter. The present study continues the research line where different implantable biofuel cells are used for the activation of electronic devices. The study emphasizes the biosensor and environmental monitoring applications of implantable biofuel cells harvesting power from natural sources, rather than their biomedical use. Copyright © 2014 Elsevier B.V. All rights reserved.

Measurement of Single Channel Currents from Cardiac Gap Junctions

NASA Astrophysics Data System (ADS)

Veenstra, Richard D.; Dehaan, Robert L.

1986-08-01

Cardiac gap junctions consist of arrays of integral membrane proteins joined across the intercellular cleft at points of cell-to-cell contact. These junctional proteins are thought to form pores through which ions can diffuse from cytosol to cytosol. By monitoring whole-cell currents in pairs of embryonic heart cells with two independent patch-clamp circuits, the properties of single gap junction channels have been investigated. These channels had a conductance of about 165 picosiemens and underwent spontaneous openings and closings that were independent of voltage. Channel activity and macroscopic junctional conductance were both decreased by the uncoupling agent 1-octanol.

Gate drive latching circuit for an auxiliary resonant commutation circuit

NASA Technical Reports Server (NTRS)

Delgado, Eladio Clemente (Inventor); Kheraluwala, Mustansir Hussainy (Inventor)

1999-01-01

A gate drive latching circuit for an auxiliary resonant commutation circuit for a power switching inverter includes a current monitor circuit providing a current signal to a pair of analog comparators to implement latching of one of a pair of auxiliary switching devices which are used to provide commutation current for commutating switching inverters in the circuit. Each of the pair of comparators feeds a latching circuit which responds to an active one of the comparators for latching the associated gate drive circuit for one of the pair of auxiliary commutating switches. An initial firing signal is applied to each of the commutating switches to gate each into conduction and the resulting current is monitored to determine current direction and therefore the one of the switches which is carrying current. The comparator provides a latching signal to the one of the auxiliary power switches which is actually conducting current and latches that particular power switch into an on state for the duration of current through the device. The latching circuit is so designed that the only time one of the auxiliary switching devices can be latched on is during the duration of an initial firing command signal.

Quantum Zeno and anti-Zeno effects in open quantum systems

NASA Astrophysics Data System (ADS)

Zhou, Zixian; Lü, Zhiguo; Zheng, Hang; Goan, Hsi-Sheng

2017-09-01

The traditional approach to the quantum Zeno effect (QZE) and quantum anti-Zeno effect (QAZE) in open quantum systems (implicitly) assumes that the bath (environment) state returns to its original state after each instantaneous projective measurement on the system and thus ignores the cross-correlations of the bath operators between different Zeno intervals. However, this assumption is not generally true, especially for a bath with a considerably nonnegligible memory effect and for a system repeatedly projected into an initial general superposition state. We find that, in stark contrast to the result of a constant value found in the traditional approach, the scaled average decay rate in unit Zeno interval of the survival probability is generally time dependent or shows an oscillatory behavior. In the case of a strong bath correlation, the transition between the QZE and the QAZE depends sensitively on the number of measurements N . For a fixed N , a QZE region predicted by the traditional approach may in fact already be in the QAZE region. We illustrate our findings using an exactly solvable open qubit system model with a Lorentzian bath spectral density, which is directly related to realistic circuit cavity quantum electrodynamics systems. Thus the results and dynamics presented here can be verified with current superconducting circuit technology.

Resonant-tunnelling diode oscillator using a slot-coupled quasioptical open resonator

NASA Technical Reports Server (NTRS)

Stephan, K. D.; Brown, E. R.; Parker, C. D.; Goodhue, W. D.; Chen, C. L.

1991-01-01

A resonant-tunneling diode has oscillated at X-band frequencies in a microwave circuit consisting of a slot antenna coupled to a semiconfocal open resonator. Coupling between the open resonator and the slot oscillator improves the noise-to-carrier ratio by about 36 dB relative to that of the slot oscillator alone in the 100-200 kHz range. A circuit operating near 10 GHz has been designed as a scale model for millimeter- and submillimeter-wave applications.

Stable p-i-n FAPbBr 3 devices with improved efficiency using sputtered ZnO as electron transport layer [Stable p-i-n FAPbBr 3 devices with improved efficiency using sputtered inorganic electron transport layer

DOE PAGES

Subbiah, Anand S.; Agarwal, Sumanshu; Mahuli, Neha; ...

2017-02-10

Here, radio-frequency magnetron sputtering is demonstrated as an effective tool to deposit highly crystalline thin zinc oxide (ZnO) layer directly on perovskite absorber as an electron transport layer (ETL). As an absorber, formamidinium lead tribromide (FAPbBr 3) is fabricated through a modified single-step solution process using hydrogen bromide (HBr) as an additive resulting in complete surface coverage and highly crystalline material. A planar p-i-n device architecture with spin-coated poly-(3,4-ethylenedioxythiophene):poly-styrenesulfonic acid (PEDOT:PSS) as hole transport material (HTM) and sputtered ZnO as ETL results in a short circuit current density of 9.5 mA cm -2 and an open circuit potential of 1.19more » V. Numerical simulations are performed to validate the underlying loss mechanisms. The use of phenyl C 60 butyric acid methyl ester (PCBM) interface layer between FAPbBr 3 and sputter-coated ZnO offers shielding from potential plasma-related interface damage. The modified interface results in a better device efficiency of 8.3% with an open circuit potential of 1.35 V. Such devices offer better stability under continuous illumination under ambient conditions in comparison with the conventional organic ETL (PCBM)-based devices.« less

Stable p-i-n FAPbBr 3 devices with improved efficiency using sputtered ZnO as electron transport layer [Stable p-i-n FAPbBr 3 devices with improved efficiency using sputtered inorganic electron transport layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Subbiah, Anand S.; Agarwal, Sumanshu; Mahuli, Neha

Here, radio-frequency magnetron sputtering is demonstrated as an effective tool to deposit highly crystalline thin zinc oxide (ZnO) layer directly on perovskite absorber as an electron transport layer (ETL). As an absorber, formamidinium lead tribromide (FAPbBr 3) is fabricated through a modified single-step solution process using hydrogen bromide (HBr) as an additive resulting in complete surface coverage and highly crystalline material. A planar p-i-n device architecture with spin-coated poly-(3,4-ethylenedioxythiophene):poly-styrenesulfonic acid (PEDOT:PSS) as hole transport material (HTM) and sputtered ZnO as ETL results in a short circuit current density of 9.5 mA cm -2 and an open circuit potential of 1.19more » V. Numerical simulations are performed to validate the underlying loss mechanisms. The use of phenyl C 60 butyric acid methyl ester (PCBM) interface layer between FAPbBr 3 and sputter-coated ZnO offers shielding from potential plasma-related interface damage. The modified interface results in a better device efficiency of 8.3% with an open circuit potential of 1.35 V. Such devices offer better stability under continuous illumination under ambient conditions in comparison with the conventional organic ETL (PCBM)-based devices.« less

Relationship between the energy levels and the photovoltaic properties of oligothiophenes.

PubMed

Lim, Eunhee

2014-08-01

A series of linear π-conjugated oligothiophenes, α,α'-dihexylquinquethiophene (DH5T), 2,5-bis(5'-hexyl-2,2'-bithiophene-5-yl)thieno[3,2-b]thiophene (DH5TT), and α,α'-dihexylheptathiophene (DH7T), has been synthesized using the Suzuki coupling reaction. The optical and electrochemical properties of oligothiophenes were easily tuned by controlling the thiophene number. The UV-vis absorption and photoluminescence (PL) spectra are gradually red-shifted on going from DH5T and DH5TT to DH7T due to the increase in α-conjugation length. The energy band gap decreased as the oligothiophene length increased. The optical band gaps of DH5T, DH5TT, and DH7T occur at 2.39, 2.25, and 2.01 eV, respectively. Bulk heterojunction organic photovoltaic cells (OPVs) fabricated from oligomers showed the power conversion efficiency of 0.45-0.8% under AM 1.5 (100 mW/cm2). Among them, DH5T showed the best OPV performance of an open circuit voltage (VOC) of 0.51 V, short-circuit current (JSC) of 4.25 mA/cm2, and fill factor (FF) of 0.37, resulting in the power conversion efficiency of 0.80%. Moreover, the relationship between conjugation length and photovoltaic properties was systematically investigated in terms of the energy band gap and open circuit voltage (VOC).

Norepinephrine-gamma-aminobutyric acid (GABA) interaction in limbic stress circuits: effects of reboxetine on GABAergic neurons.

PubMed

Herman, James P; Renda, Andrew; Bodie, Bryan

2003-01-15

Reboxetine is a selective norepinephrine (NE) reuptake inhibitor that exerts significant antidepressant action. The current study assessed norepinephrine-gamma-aminobutyric acid (GABA)-ergic mechanisms in reboxetine action, examining glutamic acid decarboxylase (GAD) mRNA expression in limbic neurocircuits following reboxetine within the context of chronic stress. Male rats received 25 mg/kg reboxetine/day, p.o. Reboxetine and vehicle animals were exposed to 1 week of variable stress exposure or handling. Behavioral responses to stress (open field) were tested on day 7, and animals were killed on day 8 to assess neuroendocrine stress responses and limbic GAD65/67 mRNA regulation (in situ hybridization). Reboxetine significantly decreased behavioral reactivity in the open field. Reboxetine administration did not affect expression of GAD65/67 mRNA in handled rats; however, administration to stressed animals reduced GAD67 (but not GAD65) mRNA in the medial amygdaloid nucleus, posteromedial bed nucleus of the stria terminalis, and dentate gyrus. In contrast, GAD65 mRNA expression was increased by reboxetine in the lateral septum of stressed animals. Norepinephrine pathways appear to modulate synthesis of GABA in central limbic stress circuits. Decreases in GABA synthetic capacity suggest reduced activation of stress-excitatory pathways and enhanced activation of stress-inhibitory circuits, and is consistent with a role for GABA in the antidepressant efficacy of NE reuptake inhibitors.

Functional and taxonomic dynamics of an electricity-consuming methane-producing microbial community.

PubMed

Bretschger, Orianna; Carpenter, Kayla; Phan, Tony; Suzuki, Shino; Ishii, Shun'ichi; Grossi-Soyster, Elysse; Flynn, Michael; Hogan, John

2015-11-01

The functional and taxonomic microbial dynamics of duplicate electricity-consuming methanogenic communities were observed over a 6 months period to characterize the reproducibility, stability and recovery of electromethanogenic consortia. The highest rate of methanogenesis was 0.72 mg-CH4/L/day, which occurred during the third month of enrichment when multiple methanogenic phylotypes and associated Desulfovibrionaceae phylotypes were present in the electrode-associated microbial community. Results also suggest that electromethanogenic microbial communities are very sensitive to electron donor-limiting open-circuit conditions. A 45 min exposure to open-circuit conditions induced an 87% drop in volumetric methane production rates. Methanogenic performance recovered after 4 months to a maximum value of 0.30 mg-CH4/L/day under set potential operation (-700 mV vs Ag/AgCl); however, current consumption and biomass production was variable over time. Long-term functional and taxonomic analyses from experimental replicates provide new knowledge toward understanding how to enrich electromethanogenic communities and operate bioelectrochemical systems for stable and reproducible performance. Copyright © 2015 Elsevier Ltd. All rights reserved.

The study of aluminium anodes for high power density Al/air batteries with brine electrolytes

NASA Astrophysics Data System (ADS)

Nestoridi, Maria; Pletcher, Derek; Wood, Robert J. K.; Wang, Shuncai; Jones, Richard L.; Stokes, Keith R.; Wilcock, Ian

Aluminium alloys containing small additions of both tin (∼0.1 wt%) and gallium (∼0.05 wt%) are shown to dissolve anodically at high rates in sodium chloride media at room temperatures; current densities >0.2 A cm -2 can be obtained at potentials close to the open circuit potential, ∼-1500 mV versus SCE. The tin exists in the alloys as a second phase, typically as ∼1 μm inclusions (precipitates) distributed throughout the aluminium structure, and anodic dissolution occurs to form pits around the tin inclusions. Although the distribution of the gallium in the alloy could not be established, it is also shown to be critical in the formation of these pits as well as maintaining their activity. The stability of the alloys to open circuit corrosion and the overpotential for high rate dissolution, both critical to battery performance, are shown to depend on factors in addition to elemental composition; both heat treatment and mechanical working influence the performance of the alloy. The correlation between alloy performance and their microstructure has been investigated.

Increasing the open-circuit voltage in high-performance organic photovoltaic devices through conformational twisting of an indacenodithiophene-based conjugated polymer.

PubMed

Chen, Chih-Ping; Hsu, Hsiang-Lin

2013-10-01

A fused ladder indacenodithiophene (IDT)-based donor-acceptor (D-A)-type alternating conjugated polymer, PIDTHT-BT, presenting n-hexylthiophene conjugated side chains is prepared. By extending the degree of intramolecular repulsion through the conjugated side chain moieties, an energy level for the highest occupied molecular orbital (HOMO) of -5.46 eV--a value approximately 0.27 eV lower than that of its counterpart PIDTDT-BT--is obtained, subsequently providing a fabricated solar cell with a high open-circuit voltage of approximately 0.947 V. The hole mobility (determined using the space charge-limited current model) in a blend film containing 20 wt% PIDTHT-BT) and 80 wt% [6,6]-phenyl-C71 butyric acid methyl ester (PC71 BM) is 2.2 × 10(-9) m(2) V(-1) s(-1), which is within the range of reasonable values for applications in organic photovoltaics. The power conversion efficiency is 4.5% under simulated solar illumination (AM 1.5G, 100 mW cm(-2)). © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Lead Selenide Colloidal Quantum Dot Solar Cells Achieving High Open-Circuit Voltage with One-Step Deposition Strategy.

PubMed

Zhang, Yaohong; Wu, Guohua; Ding, Chao; Liu, Feng; Yao, Yingfang; Zhou, Yong; Wu, Congping; Nakazawa, Naoki; Huang, Qingxun; Toyoda, Taro; Wang, Ruixiang; Hayase, Shuzi; Zou, Zhigang; Shen, Qing

2018-06-18

Lead selenide (PbSe) colloidal quantum dots (CQDs) are considered to be a strong candidate for high-efficiency colloidal quantum dot solar cells (CQDSCs) due to its efficient multiple exciton generation. However, currently, even the best PbSe CQDSCs can only display open-circuit voltage ( V oc ) about 0.530 V. Here, we introduce a solution-phase ligand exchange method to prepare PbI 2 -capped PbSe (PbSe-PbI 2 ) CQD inks, and for the first time, the absorber layer of PbSe CQDSCs was deposited in one step by using this PbSe-PbI 2 CQD inks. One-step-deposited PbSe CQDs absorber layer exhibits fast charge transfer rate, reduced energy funneling, and low trap assisted recombination. The champion large-area (active area is 0.35 cm 2 ) PbSe CQDSCs fabricated with one-step PbSe CQDs achieve a power conversion efficiency (PCE) of 6.0% and a V oc of 0.616 V, which is the highest V oc among PbSe CQDSCs reported to date.

Methods of improving the efficiency of photovoltaic cells. [including X ray analysis

NASA Technical Reports Server (NTRS)

Loferski, J. J.; Roessler, B.; Crisman, E. E.; Chen, L. Y.; Kaul, R.

1974-01-01

Work on aluminum-alloyed silicon grating cells is continued. Optimization of the geometry (grating line width and spacing) confirms the analysis of such cells. A 1 sq cm grating cell was fabricated and its i-V characteristic was measured under an AMO solar simulator. It is found that the efficiency of this cell would be about 7.9%, if it were covered by the usual antireflection coating. The surface of the cell is not covered by a diffused junction. The response is blue shifted; the current is somewhat higher than that produced by a commercial Si cell. However, the open circuit voltage is low, and attempts to optimize the open circuit voltage of the aluminum-alloy junctions are described. A preliminary X-ray topographic examination of GaAs specimens of the type commonly used to make solar cells is studied. The X-ray study shows that the wafers are filled with regions having strain gradients, possibly caused by precipitates. It is possible that a correlation exists between the presence of low mechanical perfection and minority carrier diffusion lengths of GaAs crystals.

Fault diagnosis and fault-tolerant finite control set-model predictive control of a multiphase voltage-source inverter supplying BLDC motor.

PubMed

Salehifar, Mehdi; Moreno-Equilaz, Manuel

2016-01-01

Due to its fault tolerance, a multiphase brushless direct current (BLDC) motor can meet high reliability demand for application in electric vehicles. The voltage-source inverter (VSI) supplying the motor is subjected to open circuit faults. Therefore, it is necessary to design a fault-tolerant (FT) control algorithm with an embedded fault diagnosis (FD) block. In this paper, finite control set-model predictive control (FCS-MPC) is developed to implement the fault-tolerant control algorithm of a five-phase BLDC motor. The developed control method is fast, simple, and flexible. A FD method based on available information from the control block is proposed; this method is simple, robust to common transients in motor and able to localize multiple open circuit faults. The proposed FD and FT control algorithm are embedded in a five-phase BLDC motor drive. In order to validate the theory presented, simulation and experimental results are conducted on a five-phase two-level VSI supplying a five-phase BLDC motor. Copyright © 2015 ISA. Published by Elsevier Ltd. All rights reserved.

Research on influence of parasitic resistance of InGaAs solar cells under continuous wave laser irradiation

NASA Astrophysics Data System (ADS)

Li, Guangji; Zhang, Hongchao; Zhou, Guanglong; Lu, Jian; Zhou, Dayong

2017-06-01

InGaAs solar cells were irradiated by 1060-1080nm continuous wave (CW) laser, and studied the laser-electrical conversion and damage experiment with the power density as 97mW/cm2 and 507W/cm2 respectively. The result indicated that there is no obvious damage phenomenon but air layer appeared in the damaged region, and there is no direct relationship between the area and the extent of damage. Moreover, the p-n junction in the damage zone was destroyed, lost the ability of photoelectric conversion. The region acts as a resistance between the two electrodes, resulting in an increase in the leakage current of the solar cells and a decrease in the parallel resistance, which is the main reason leading to the decline of open circuit voltage, short circuit current and conversion efficiency. This paper would provide a reference for wireless energy transmission and the subsequent laser damage of solar cells.

Electrically operated magnetic switch designed to display reduced leakage inductance

DOEpatents

Cook, Edward G.

1994-01-01

An electrically operated magnetic switch is disclosed herein for use in opening and closing a circuit between two terminals depending upon the voltage across these terminals. The switch so disclosed is comprised of a ferrite core in the shape of a toroid having opposing ends and opposite inner and outer sides and an arrangement of electrically conductive components defining at least one current flow path which makes a number of turns around the core. This arrangement of components includes a first plurality of electrically conducive rigid rods parallel with and located outside the outer side of the core and a second plurality of electrically conductive rigid rods parallel with and located inside the inner side of the core. The arrangement also includes means for electrically connecting these rods together so that the define the current flow path. In one embodiment, this latter means uses rigid cross-tab means. In another, preferred embodiment, printed circuits on rigid dielectric substrates located on opposite ends of the core are utilized to interconnect the rods together.

Photoassisted Oxygen Reduction Reaction in H2 -O2 Fuel Cells.

PubMed

Zhang, Bingqing; Wang, Shengyang; Fan, Wenjun; Ma, Weiguang; Liang, Zhenxing; Shi, Jingying; Liao, Shijun; Li, Can

2016-11-14

The oxygen reduction reaction (ORR) is a key step in H 2 -O 2 fuel cells, which, however, suffers from slow kinetics even for state-of-the-art catalysts. In this work, by making use of photocatalysis, the ORR was significantly accelerated with a polymer semiconductor (polyterthiophene). The onset potential underwent a positive shift from 0.66 to 1.34 V, and the current was enhanced by a factor of 44 at 0.6 V. The improvement was further confirmed in a proof-of-concept light-driven H 2 -O 2 fuel cell, in which the open circuit voltage (V oc ) increased from 0.64 to 1.18 V, and the short circuit current (J sc ) was doubled. This novel tandem structure combining a polymer solar cell and a fuel cell enables the simultaneous utilization of photo- and electrochemical energy, showing promising potential for applications in energy conversion and storage. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

An IBM PC-based math model for space station solar array simulation

NASA Technical Reports Server (NTRS)

Emanuel, E. M.

1986-01-01

This report discusses and documents the design, development, and verification of a microcomputer-based solar cell math model for simulating the Space Station's solar array Initial Operational Capability (IOC) reference configuration. The array model is developed utilizing a linear solar cell dc math model requiring only five input parameters: short circuit current, open circuit voltage, maximum power voltage, maximum power current, and orbit inclination. The accuracy of this model is investigated using actual solar array on orbit electrical data derived from the Solar Array Flight Experiment/Dynamic Augmentation Experiment (SAFE/DAE), conducted during the STS-41D mission. This simulator provides real-time simulated performance data during the steady state portion of the Space Station orbit (i.e., array fully exposed to sunlight). Eclipse to sunlight transients and shadowing effects are not included in the analysis, but are discussed briefly. Integrating the Solar Array Simulator (SAS) into the Power Management and Distribution (PMAD) subsystem is also discussed.

Fabrication of p-type CuO thin films using chemical bath deposition technique and their solar cell applications with Si nanowires

NASA Astrophysics Data System (ADS)

Akgul, Funda Aksoy; Akgul, Guvenc

2017-02-01

Recently, CuO has attracted much interest owing to its suitable material properties, inexpensive fabrication cost and potential applications for optoelectronic devices. In this study, CuO thin films were deposited on glass substrates using chemical bath deposition technique and post-deposition annealing effect on the properties of the prepared samples were investigated. p-n heterojunction solar cells were then constructed by coating of p-type CuO films onto the vertically well-aligned n-type Si nanowires synthesized through MACE method. Photovoltaic performance of the fabricated devices were determined with current-voltage (I-V) measurements under AM 1.5 G illumination. The optimal short-circuit current density, open-circuit voltage, fill factor and power conversion efficiency were found to be 3.2 mA/cm-2, 337 mV, 37.9 and 0.45%, respectively. The observed performance clearly indicates that the investigated device structure could be a promising candidate for high-performance low-cost new-generation photovoltaic diodes.

High-efficiency piezoelectric micro harvester for collecting low-frequency mechanical energy.

PubMed

Li, Xin; Song, Jinhui; Feng, Shuanglong; Xie, Xiong; Li, Zhenhu; Wang, Liang; Pu, Yayun; Soh, Ai Kah; Shen, Jun; Lu, Wenqiang; Liu, Shuangyi

2016-12-02

A single-layer zinc oxide (ZnO) nanorod array-based micro energy harvester was designed and integrated with a piezoelectric metacapacitor. The device presents outstanding low-frequency (1-10 Hz) mechanical energy harvesting capabilities. When compared with conventional pristine ZnO nanostructured piezoelectric harvesters or generators, both open-circuit potential and short-circuit current are significantly enhanced (up to 3.1 V and 124 nA cm -2 ) for a single mechanical knock (∼34 kPa). Higher electromechanical conversion efficiency (1.3 pC/Pa) is also observed. The results indicate that the integration of the piezoelectric metacapacitor is a crucial factor for improving the low-frequency energy harvesting performance. A double piezoelectric-driven mechanism is proposed to explain current higher output power, in which the metacapacitor plays the multiple roles of charge pumping, storing and transferring. An as-fabricated prototype device for lighting an LED demonstrates high power transference capability, with over 95% transference efficiency to the external load.

18.4%-Efficient Heterojunction Si Solar Cells Using Optimized ITO/Top Electrode.

PubMed

Kim, Namwoo; Um, Han-Don; Choi, Inwoo; Kim, Ka-Hyun; Seo, Kwanyong

2016-05-11

We optimize the thickness of a transparent conducting oxide (TCO) layer, and apply a microscale mesh-pattern metal electrode for high-efficiency a-Si/c-Si heterojunction solar cells. A solar cell equipped with the proposed microgrid metal electrode demonstrates a high short-circuit current density (JSC) of 40.1 mA/cm(2), and achieves a high efficiency of 18.4% with an open-circuit voltage (VOC) of 618 mV and a fill factor (FF) of 74.1% as result of the shortened carrier path length and the decreased electrode area of the microgrid metal electrode. Furthermore, by optimizing the process sequence for electrode formation, we are able to effectively restore the reduction in VOC that occurs during the microgrid metal electrode formation process. This work is expected to become a fundamental study that can effectively improve current loss in a-Si/c-Si heterojunction solar cells through the optimization of transparent and metal electrodes.

Investigation of reliability attributes and accelerated stress factors of terrestrial solar cells. First annual report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prince, J.L.; Lathrop, J.W.

1979-05-01

The results of accelerated stress testing of four different types of silicon terrestrial solar cells are discussed. The accelerated stress tests used included bias-temperature tests, bias-temperature-humidity tests, thermal cycle and thermal shock tests, and power cycle tests. Characterization of the cells was performed before stress testing and at periodic down-times, using electrical measurement, visual inspection, and metal adherence pull tests. Electrical parameters measured included short-circuit current, I/sub sc/, open circuit voltage, V/sub oc/, and output power, voltage, and current at the maximum power point, P/sub m/, V/sub m/, and I/sub m/ respectively. Incorporated in the report are the distributions ofmore » the prestress electrical data for all cell types. Data was also obtained on cell series and shunt resistance. Significant differences in the response to the various stress tests was observed between cell types. On the basis of the experience gained in this research work, a suggested Reliability Qualification Test Schedule was developed.« less

Fill factor in organic solar cells can exceed the Shockley-Queisser limit

NASA Astrophysics Data System (ADS)

Trukhanov, Vasily A.; Bruevich, Vladimir V.; Paraschuk, Dmitry Yu.

2015-06-01

The ultimate efficiency of organic solar cells (OSC) is under active debate. The solar cell efficiency is calculated from the current-voltage characteristic as a product of the open-circuit voltage (VOC), short-circuit current (JSC), and the fill factor (FF). While the factors limiting VOC and JSC for OSC were extensively studied, the ultimate FF for OSC is scarcely explored. Using numerical drift-diffusion modeling, we have found that the FF in OSC can exceed the Shockley-Queisser limit (SQL) established for inorganic p-n junction solar cells. Comparing charge generation and recombination in organic donor-acceptor bilayer heterojunction and inorganic p-n junction, we show that such distinctive properties of OSC as interface charge generation and heterojunction facilitate high FF, but the necessary condition for FF exceeding the SQL in OSC is field-dependence of charge recombination at the donor-acceptor interface. These findings can serve as a guideline for further improvement of OSC.

An enhanced mangiferaindica for dye sensitized solar cell application

NASA Astrophysics Data System (ADS)

Uno, U. E.; Emetere, M. E.; Fadipe, L. A.; Oluranti, Jonathan

2016-02-01

Titanium dioxide (T1O2) is preferred to Zinc oxide as mesoporous oxide layer because it raised the efficiency of DSSCs from 1% to 7%. The chemistry of the process however seem rigorous to allow the light induced electron injection from the adsorbed dye into the nanocrystallites i.e. which renders the TiO2 conductive. The DSSC fabricated consist of 2.25 cm2 active area of titanium dioxide coated on FTO glass (fluorine tin oxide) immersed in ethanol solution of natural dye extracted as an anode (electrode) and counter electrode. These two electrodes were coupled together and the space between them was filled with the Iodolyte AN-50 as solid electrolyte or redox mediator. The photo electrochemical parameters of the dye extracted (Mango fruit Peel) from the results obtained are short circuit current (Isc)= 1.22×10-2, current density (Jsc)=4.07×10-2, open circuit voltage (voc) =0.53V, fill factor (FF) of 0.16 and the overall conversion efficiency (Eff) =0.345%.

Aging and failure mode of electrochemical double layer capacitors during accelerated constant load tests

NASA Astrophysics Data System (ADS)

Kötz, R.; Ruch, P. W.; Cericola, D.

Electrochemical double layer capacitors of the BCAP0350 type (Maxwell Technologies) were tested under constant load conditions at different voltages and temperatures. The aging of the capacitors was monitored during the test in terms of capacitance, internal resistance and leakage current. Aging was significantly accelerated by elevated temperature or increased voltage. Only for extreme conditions at voltages of 3.5 V or temperatures above 70 °C the capacitors failed due to internal pressure build-up. No other failure events such as open circuit or short circuit were detected. Impedance measurements after the tests showed increased high frequency resistance, an increased distributed resistance and most likely an increase in contact resistance between electrode and current collector together with a loss of capacitance. Capacitors aged at elevated voltages (3.3 V) exhibited a tilting of the low frequency component, which implies an increase in the heterogeneity of the electrode surface. This feature was not observed upon aging at elevated temperatures (70 °C).

Modeling and simulation of InGaN/GaN quantum dots solar cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aissat, A., E-mail: sakre23@yahoo.fr; LASICOMLaboratory, Faculty of Sciences, University of Blida 1; Benyettou, F.

2016-07-25

Currently, quantum dots have attracted attention in the field of optoelectronics, and are used to overcome the limits of a conventional solar cell. Here, an In{sub 0.25}Ga{sub 0.75}N/GaN Quantum Dots Solar Cell has been modeled and simulated using Silvaco Atlas. Our results show that the short circuit current increases with the insertion of the InGaN quantum dots inside the intrinsic region of a GaN pin solar cell. In contrary, the open circuit voltage decreases. A relative optimization of the conversion efficiency of 54.77% was achieved comparing a 5-layers In{sub 0.25}Ga{sub 0.75}N/GaN quantum dots with pin solar cell. The conversion efficiencymore » begins to decline beyond 5-layers quantum dots introduced. Indium composition of 10 % improves relatively the efficiency about 42.58% and a temperature of 285 K gives better conversion efficiency of 13.14%.« less

30 CFR 77.900 - Low- and medium-voltage circuits serving portable or mobile three-phase alternating current...

Code of Federal Regulations, 2011 CFR

2011-07-01

... portable or mobile three-phase alternating current equipment; circuit breakers. 77.900 Section 77.900... mobile three-phase alternating current equipment; circuit breakers. Low- and medium-voltage circuits supplying power to portable or mobile three-phase alternating current equipment shall be protected by...

Power electronics for low power arcjets

NASA Technical Reports Server (NTRS)

Hamley, John A.; Hill, Gerald M.

1991-01-01

In anticipation of the needs of future light-weight, low-power spacecraft, arcjet power electronics in the 100 to 400 W operating range were developed. Limited spacecraft power and thermal control capacity of these small spacecraft emphasized the need for high efficiency. Power topologies similar to those in the higher 2 kW and 5 to 30 kW power range were implemented, including a four transistor bridge switching circuit, current mode pulse-width modulated control, and an output current averaging inductor with an integral pulse generation winding. Reduction of switching transients was accomplished using a low inductance power distribution network, and no passive snubber circuits were necessary for power switch protection. Phase shift control of the power bridge was accomplished using an improved pulse width modulation to phase shift converter circuit. These features, along with conservative magnetics designs allowed power conversion efficiencies of greater than 92.5 percent to be achieved into resistive loads over the entire operating range of the converter. Electromagnetic compatibility requirements were not considered in this work, and control power for the converter was derived from AC mains. Addition of input filters and control power converters would result in an efficiency of on the order of 90 percent for a flight unit. Due to the developmental nature of arcjet systems at this power level, the exact nature of the thruster/power processor interface was not quantified. Output regulation and current ripple requirements of 1 and 20 percent respectively, as well as starting techniques, were derived from the characteristics of the 2 kW system but an open circuit voltage in excess of 175 V was specified. Arcjet integration tests were performed, resulting in successful starts and stable arcjet operation at power levels as low as 240 W with simulated hydrazine propellants.

Another Nulling Hall-Effect Current-Measuring Circuit

NASA Technical Reports Server (NTRS)

Thibodeau, Phillip E.; Sullender, Craig C.

1993-01-01

Lightweight, low-power circuit provides noncontact measurement of alternating or direct current of many ampheres in main conductor. Advantages of circuit over other nulling Hall-effect current-measuring circuits is stability and accuracy increased by putting both analog-to-digital and digital-to-analog converters in nulling feedback loop. Converters and rest of circuit designed for operation at sampling rate of 100 kHz, but rate changed to alter time or frequency response of circuit.

An Experimental Determination of the Quasi-Rest Potential of Copper Indium Disulfide Utilizing the Novel Open-Circuit Voltage Transient

NASA Astrophysics Data System (ADS)

Newell, Michael Jason

Environmental sustainability requires resource management that takes future generations into account. The present generation has witnessed changes across the planet, unprecedented in human history and disrupting communities and cities around the world, due to shifting global climate. This is primarily the result of fossil fuels, which powered modern civilization but dramatically increased levels of CO2 and other greenhouse gases, and may be the least sustainable aspect of human civilization. Chapter 1 justifies the research from an environmental perspective and provides initial research parameters. Thin film photovoltaic (PV) modules are reported the most sustainable among energy production technologies currently available. Electrodeposited PV layers offer significant improvement to sustainability metrics over current thin film production methods, at reduced cost, but have rarely been demonstrated on an industrial scale. Quasi-rest potential (QRP) ultimately led to large-scale, electrodeposited thin film CdTe modules. An in-situ material characterization technique that allows adjustment of the deposition voltage (Vdep) to match the exact experimental conditions, QRP enabled precise control of deposit stoichiometry and crystallinity. Chapter 2 discusses theory and literature regarding QRP, and introduces the open-circuit voltage transient (Voc T), developed by the present research for analyzing QRP as a function of both Vdep and time. VocT data from a CdTe ethylene glycol bath matches details and speculations from the literature. Although predicted to have wide applicability, experimental QRP data have never been published for compounds unrelated to CdTe. Chapter 3 discusses VocTs performed in pursuit of electrodeposited CuInS2, demonstrating functionality as a QRP scan in a variety of ethylene glycol solutions. Stoichiometries of deposited films were improved by using the V ocT to determine appropriate plating voltages. VocTs enabled QRP, in-situ rest potential (EM2), and current simultaneously vs Vdep and correlated with cyclic voltammetry experiments. Films approaching stoichiometric CuInS2 were generally obtained around -1 V vs Ag/AgCl, just noble of onset of metallic indium deposition, with a QRP around -0.8 V and EM2 between -0.55 V and -0.6 V. Sulfur content of deposited films could also be significantly increased during deposition using open-circuit techniques based on VocT data. Serendipitous production of large copper sulfide nanowires is briefly discussed.

Relationship of Open-Circuit Voltage to CdTe Hole Concentration and Lifetime

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duenow, Joel N.; Burst, James M.; Albin, David S.

We investigate the correlation of bulk CdTe and CdZnTe material properties with experimental open-circuit voltage (Voc) through fabrication and characterization of diverse single-crystal solar cells with different dopants. Several distinct crystal types reach Voc >900 mV. Correlations are in general agreement with Voc limits modeled from bulk minority-carrier lifetime and hole concentration.

Studies of silicon p-n junction solar cells. [open circuit photovoltage

NASA Technical Reports Server (NTRS)

Lindholm, F. A.

1976-01-01

Single crystal silicon p-n junction solar cells made with low resistivity substrates show poorer solar energy conversion efficiency than traditional theory predicts. The physical mechanisms responsible for this discrepancy are identified and characterized. The open circuit voltage in shallow junction cells of about 0.1 ohm/cm substrate resistivity is investigated under AMO (one sun) conditions.

Guanidinium: A Route to Enhanced Carrier Lifetime and Open-Circuit Voltage in Hybrid Perovskite Solar Cells.

PubMed

De Marco, Nicholas; Zhou, Huanping; Chen, Qi; Sun, Pengyu; Liu, Zonghao; Meng, Lei; Yao, En-Ping; Liu, Yongsheng; Schiffer, Andy; Yang, Yang

2016-02-10

Hybrid perovskites have shown astonishing power conversion efficiencies owed to their remarkable absorber characteristics including long carrier lifetimes, and a relatively substantial defect tolerance for solution-processed polycrystalline films. However, nonradiative charge carrier recombination at grain boundaries limits open circuit voltages and consequent performance improvements of perovskite solar cells. Here we address such recombination pathways and demonstrate a passivation effect through guanidinium-based additives to achieve extraordinarily enhanced carrier lifetimes and higher obtainable open circuit voltages. Time-resolved photoluminescence measurements yield carrier lifetimes in guanidinium-based films an order of magnitude greater than pure-methylammonium counterparts, giving rise to higher device open circuit voltages and power conversion efficiencies exceeding 17%. A reduction in defect activation energy of over 30% calculated via admittance spectroscopy and confocal fluorescence intensity mapping indicates successful passivation of recombination/trap centers at grain boundaries. We speculate that guanidinium ions serve to suppress formation of iodide vacancies and passivate under-coordinated iodine species at grain boundaries and within the bulk through their hydrogen bonding capability. These results present a simple method for suppressing nonradiative carrier loss in hybrid perovskites to further improve performances toward highly efficient solar cells.

Submicrosecond Power-Switching Test Circuit

NASA Technical Reports Server (NTRS)

Folk, Eric N.

2006-01-01

A circuit that changes an electrical load in a switching time shorter than 0.3 microsecond has been devised. This circuit can be used in testing the regulation characteristics of power-supply circuits . especially switching power-converter circuits that are supposed to be able to provide acceptably high degrees of regulation in response to rapid load transients. The combination of this power-switching circuit and a known passive constant load could be an attractive alternative to a typical commercially available load-bank circuit that can be made to operate in nominal constant-voltage, constant-current, and constant-resistance modes. The switching provided by a typical commercial load-bank circuit in the constant-resistance mode is not fast enough for testing of regulation in response to load transients. Moreover, some test engineers do not trust the test results obtained when using commercial load-bank circuits because the dynamic responses of those circuits are, variously, partly unknown and/or excessively complex. In contrast, the combination of this circuit and a passive constant load offers both rapid switching and known (or at least better known) load dynamics. The power-switching circuit (see figure) includes a signal-input section, a wide-hysteresis Schmitt trigger that prevents false triggering in the event of switch-contact bounce, a dual-bipolar-transistor power stage that drives the gate of a metal oxide semiconductor field-effect transistor (MOSFET), and the MOSFET, which is the output device that performs the switching of the load. The MOSFET in the specific version of the circuit shown in the figure is rated to stand off a potential of 100 V in the "off" state and to pass a current of 20 A in the "on" state. The switching time of this circuit (the characteristic time of rise or fall of the potential at the drain of the MOSFET) is .300 ns. The circuit can accept any of three control inputs . which one depending on the test that one seeks to perform: a repetitive waveform from a signal generator, momentary closure of a push-button switch, or closure or opening of a manually operated on/off switch. In the case of a signal generator, one can adjust the frequency and duty cycle as needed to obtain the desired AC power-supply response, which one could display on an oscilloscope. Momentary switch closure could be useful for obtaining (and, if desired, displaying on an oscilloscope set to trigger on an event) the response of a power supply to a single load transient. The on/off switch can be used to switch between load states in which static-load regulation measurements are performed.

Analysis of electrical properties of heterojunction based on ZnIn2Se4

NASA Astrophysics Data System (ADS)

Attia, A. A.; Ali, H. A. M.; Salem, G. F.; Ismail, M. I.; Al-Harbi, F. F.

2017-04-01

Heterojunction of n-ZnIn2Se4/p-Si was fabricated using thermal evaporation of ZnIn2Se4 thin films of thickness 473 nm onto p-Si substrate at room temperature. The characteristics of current-voltage (I-V) for n-ZnIn2Se4/p-Si heterojunction were investigated at different temperatures ranged from 308 K to 363 K. The junction parameters namely are; rectification ratio (RR), series resistance (Rs), shunt resistance (Rsh) and diode ideality factor (n) were calculated from the analysis of I-V curves. The forward current showed two conduction mechanisms operating, which were the thermionic emission and the single trap space charge limited current in low (0 ≤ V ≤ 0.5 V) and high (V ≥ 0.7 V) ranges of voltage, respectively. The reverse current was due to the generation through Si rather than the ZnIn2Se4 film. The built-in voltage and the width of the depletion region were determined from the capacitance-voltage (C-V) measurements. The photovoltaic characteristics of the junction were also studied through the (I-V) measurements under illumination of 40 mW/cm2. The cell parameters; the short-circuit current, the open-circuit voltage and the fill factor were estimated at room temperature.

Measurements and Modeling of III-V Solar Cells at High Temperatures up to 400 $${}^{\\circ}$$ C

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perl, Emmett E.; Simon, John; Geisz, John F.

2016-09-01

In this paper, we study the performance of 2.0 eV Al0.12Ga0.39In0.49P and 1.4 eV GaAs solar cells over a temperature range of 25-400 degrees C. The temperature-dependent J01 and J02 dark currents are extracted by fitting current-voltage measurements to a two-diode model. We find that the intrinsic carrier concentration ni dominates the temperature dependence of the dark currents, open-circuit voltage, and cell efficiency. To study the impact of temperature on the photocurrent and bandgap of the solar cells, we measure the quantum efficiency and illuminated current-voltage characteristics of the devices up to 400 degrees C. As the temperature is increased,more » we observe no degradation to the internal quantum efficiency and a decrease in the bandgap. These two factors drive an increase in the short-circuit current density at high temperatures. Finally, we measure the devices at concentrations ranging from ~30 to 1500 suns and observe n = 1 recombination characteristics across the entire temperature range. These findings should be a valuable guide to the design of any system that requires high-temperature solar cell operation.« less

Current-voltage characteristics in macroporous silicon/SiOx/SnO2:F heterojunctions.

PubMed

Garcés, Felipe A; Urteaga, Raul; Acquaroli, Leandro N; Koropecki, Roberto R; Arce, Roberto D

2012-07-25

We study the electrical characteristics of macroporous silicon/transparent conductor oxide junctions obtained by the deposition of fluorine doped-SnO2 onto macroporous silicon thin films using the spray pyrolysis technique. Macroporous silicon was prepared by the electrochemical anodization of a silicon wafer to produce pore sizes ranging between 0.9 to 1.2 μm in diameter. Scanning electronic microscopy was performed to confirm the pore filling and surface coverage. The transport of charge carriers through the interface was studied by measuring the current-voltage curves in the dark and under illumination. In the best configuration, we obtain a modest open-circuit voltage of about 70 mV and a short-circuit current of 3.5 mA/cm2 at an illumination of 110 mW/cm2. In order to analyze the effects of the illumination on the electrical properties of the junction, we proposed a model of two opposing diodes, each one associated with an independent current source. We obtain a good accordance between the experimental data and the model. The current-voltage curves in illuminated conditions are well fitted with the same parameters obtained in the dark where only the photocurrent intensities in the diodes are free parameters.

Electronic logic to enhance switch reliability in detecting openings and closures of redundant switches

DOEpatents

Cooper, James A.

1986-01-01

A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and failsafe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

Flexible, transparent and exceptionally high power output nanogenerators based on ultrathin ZnO nanoflakes

NASA Astrophysics Data System (ADS)

van Ngoc, Huynh; Kang, Dae Joon

2016-02-01

Novel nanogenerator structures composed of ZnO nanoflakes of less than 10 nm thickness were fabricated using a novel method involving a facile synthetic route and a rational design. The fabricated nanogenerators exhibited a short-circuit current density of 67 μA cm-2, a peak-to-peak open-circuit voltage of 110 V, and an overall output power density exceeding 1.2 mW cm-2, and to the best of our knowledge, these are the best values that have been reported so far in the literature on ZnO-based nanogenerators. We demonstrated that our nanogenerator design could instantaneously power 20 commercial green light-emitting diodes without any additional energy storage processes. Both the facile synthetic route for the ZnO nanoflakes and the straightforward device fabrication process present great scaling potential in order to power mobile and personal electronics that can be used in smart wearable systems, transparent and flexible devices, implantable telemetric energy receivers, electronic emergency equipment, and other self-powered nano/micro devices.Novel nanogenerator structures composed of ZnO nanoflakes of less than 10 nm thickness were fabricated using a novel method involving a facile synthetic route and a rational design. The fabricated nanogenerators exhibited a short-circuit current density of 67 μA cm-2, a peak-to-peak open-circuit voltage of 110 V, and an overall output power density exceeding 1.2 mW cm-2, and to the best of our knowledge, these are the best values that have been reported so far in the literature on ZnO-based nanogenerators. We demonstrated that our nanogenerator design could instantaneously power 20 commercial green light-emitting diodes without any additional energy storage processes. Both the facile synthetic route for the ZnO nanoflakes and the straightforward device fabrication process present great scaling potential in order to power mobile and personal electronics that can be used in smart wearable systems, transparent and flexible devices, implantable telemetric energy receivers, electronic emergency equipment, and other self-powered nano/micro devices. Electronic supplementary information (ESI) available: FE-SEM images of ZnO NFs grown on textile and FTO/glass substrates, XRD patterns of synthesized ZnO NFs, nitrogen adsorption isotherms for ZnO NWs and ZnO NFs, effect of different coating layers on ZnO NFNGs, P(VDF-TrFE) coating on ZnO NFs, output open-circuit voltages of a textile electrostatic NG based on P(VDF-TrFE) coated on ZnO NFs and a textile ZnO NFNG without an insulating layer generated by a sonic wave, NG-based triboelectric effects and PDMS-coated ZnO NF-based NGs grown on an ITO/PET substrate. See DOI: 10.1039/c5nr08324a

High-efficiency photovoltaic technology including thermoelectric generation

NASA Astrophysics Data System (ADS)

Fisac, Miguel; Villasevil, Francesc X.; López, Antonio M.

2014-04-01

Nowadays, photovoltaic solar energy is a clean and reliable source for producing electric power. Most photovoltaic systems have been designed and built up for use in applications with low power requirements. The efficiency of solar cells is quite low, obtaining best results in monocrystalline silicon structures, with an efficiency of about 18%. When temperature rises, photovoltaic cell efficiency decreases, given that the short-circuit current is slightly increased, and the open-circuit voltage, fill factor and power output are reduced. To ensure that this does not affect performance, this paper describes how to interconnect photovoltaic and thermoelectric technology into a single structure. The temperature gradient in the solar panel is used to supply thermoelectric cells, which generate electricity, achieving a positive contribution to the total balance of the complete system.

Comparison of four MPPT techniques for PV systems

NASA Astrophysics Data System (ADS)

Atik, L.; Petit, P.; Sawicki, J. P.; Ternifi, Z. T.; Bachir, G.; Aillerie, M.

2016-07-01

The working behavior of a module / PV array is non-linear and highly dependent on working conditions. As a given condition, there is only one point at which the level of available power at its output is maximum. This point varies with time, enlightenment and temperature. To ensure optimum operation, the use of MPPT control allows us to extract the maximum power. This paper presents a comparative study of four widely-adopted MPPT algorithms, such as Perturb and Observe, Incremental Conductance, Measurements of the variation of the open circuit voltage or of the short-circuit current. Their performance is evaluated using, for all these techniques. In particular, this study compares the behaviors of each technique in presence of solar irradiation variations and temperature fluctuations. These MPPT techniques will be compared using the Matlab / Simulink tool.

The study of colloidal lead bromide perovskite nanocrystals and its application in hybrid solar cells

NASA Astrophysics Data System (ADS)

Usman, Khurram; Ming, Shuaiqiang; Liu, Xiaohui; Li, Xiaodong; Gui, Zhenzhen; Xie, Qiaomu; Zhang, Wenxiao; Wu, Yulei; Wang, Hai-Qiao; Fang, Junfeng

2018-03-01

In this study, we investigated inorganic cesium lead halide perovskite semiconductor and tested its application in photovoltaics. Highly crystalline material was synthesized by two different approaches, including a high temperature route and a low temperature method. Inorganic-polymer hybrid solar cells based on solution-deposited layers of CsPbBr3 nanocrystals were successfully fabricated in ambient, with and without post treatments. The solar cells employing nanocrystals with short ligands, obtained from low temperature route, outperformed the devices with long ligands. The devices exhibited an efficiency up to 1.16%, with an open circuit voltage (V oc) of 0.87 V, a fill factor of 56.2% and a short-circuit current density (J sc) of 2.38 mA/cm2.

Realization of highly efficient polymer solar cell based on PBDTTT-EFT and [71]PCBM

NASA Astrophysics Data System (ADS)

Bharti, Vishal; Chand, Suresh; Dutta, Viresh

2018-04-01

In this work, we have fabricated highly efficient polymer solar cells based on the blend of PBDTTT-EFT:PC71BM in the inverted device configuration. By using low temperature processed zinc oxide (ZnO) nanoparticles as an electron-transport layer (ETL) and 1,8-diiodooctane (DIO) as additive in chlorobenzene (CB) solvent we have achieved PCE of 9.43% with an excellent short-circuit current density (Jsc) of 17.6 mAcm-2, open circuit voltage (Voc) of 0.80 V and fill factor (FF) of 0.67. These results reveals that addition of 3% DIO additive in CB solvent improve the morphology (lower charge carrier recombination and better metal/organic semiconductor interface) and provide uniform interpenetrating networks in PBDTTT-EFT:PC71BM blend active layer.

Preparation of porous titania film and its application in solar cells.

PubMed

Zhang, Tianhui; Zhao, Suling; Piao, Lingyu; Xu, Zheng; Liu, Xiaodong; Kong, Chao; Xu, Xurong

2011-11-01

Polymer/nanocrystal bulk heterojunction photovoltaic cells have attracted substantial interest because the hybrid active layer combines the advantages of inorganic materials and polymers. In this work, a porous TiO2 was prepared via the sol-gel method with a polyethylene glycol 2000 (PEG2000) template. A kind of polymer/inorganic solar cell based on poly (3-hexylthiophene) (P3HT)/TiO2 was fabricated on the indium-tin-oxide (ITO) glass substrate and the structure of device was ITO/TiO2/P3HT/Au. The device showed the performance with a short circuit current (J(SC)) of 1.29 mA/cm2, an open circuit voltage (V(OC)) of 0.55 V and a fill factor (FF) of 28.7%.

Robust High-performance Dye-sensitized Solar Cells Based on Ionic Liquid-sulfolane Composite Electrolytes.

PubMed

Lau, Genevieve P S; Décoppet, Jean-David; Moehl, Thomas; Zakeeruddin, Shaik M; Grätzel, Michael; Dyson, Paul J

2015-12-16

Novel ionic liquid-sulfolane composite electrolytes based on the 1,2,3-triazolium family of ionic liquids were developed for dye-sensitized solar cells. The best performing device exhibited a short-circuit current density of 13.4 mA cm(-2), an open-circuit voltage of 713 mV and a fill factor of 0.65, corresponding to an overall power conversion efficiency (PCE) of 6.3%. In addition, these devices are highly stable, retaining more than 95% of the initial device PCE after 1000 hours of light- and heat-stress. These composite electrolytes show great promise for industrial application as they allow for a 14.5% improvement in PCE, compared to the solvent-free eutectic ionic liquid electrolyte system, without compromising device stability.

Single Wall Carbon Nanotube-polymer Solar Cells

NASA Technical Reports Server (NTRS)

Bailey, Sheila G.; Castro, Stephanie L.; Landi, Brian J.; Gennett, Thomas; Raffaelle, Ryne P.

2005-01-01

Investigation of single wall carbon nanotube (SWNT)-polymer solar cells has been conducted towards developing alternative lightweight, flexible devices for space power applications. Photovoltaic devices were constructed with regioregular poly(3-octylthiophene)-(P3OT) and purified, >95% w/w, laser-generated SWNTs. The P3OT composites were deposited on ITO-coated polyethylene terapthalate (PET) and I-V characterization was performed under simulated AM0 illumination. Fabricated devices for the 1.0% w/w SWNT-P3OT composites showed a photoresponse with an open-circuit voltage (V(sub oc)) of 0.98 V and a short-circuit current density (I(sub sc)) of 0.12 mA/sq cm. Optimization of carrier transport within these novel photovoltaic systems is proposed, specifically development of nanostructure-SWNT complexes to enhance exciton dissociation.

ZnO Hierarchical Nanostructure Photoanode in a CdS Quantum Dot-Sensitized Solar Cell

PubMed Central

Liu, Huan; Zhang, Gengmin; Sun, Wentao; Shen, Ziyong; Shi, Mingji

2015-01-01

A hierarchical array of ZnO nanocones covered with ZnO nanospikes was hydrothermally fabricated and employed as the photoanode in a CdS quantum dot-sensitized solar cell (QDSSC). This QDSSC outperformed the QDSSC based on a simple ZnO nanocone photoanode in all the four principal photovoltaic parameters. Using the hierarchical photoanode dramatically increased the short circuit current density and also slightly raised the open circuit voltage and the fill factor. As a result, the conversion efficiency of the QDSSC based on the hierarchical photoanode was more than twice that of the QDSSC based on the simple ZnO nanocone photoanode. This improvement is attributable to both the enlarged specific area of the photoanode and the reduction in the recombination of the photoexcited electrons. PMID:26379268

Design and Fabrication of Multifunctional Portable Bi2Te3-Based Thermoelectric Camping Lamp

NASA Astrophysics Data System (ADS)

Zhou, Yi; Li, Gongping

2018-05-01

Camping lamps have been widely used in the lighting, power supply, and intelligent electronic equipment fields. However, applications of traditional chemical and solar camping lamps are largely limited by the physical size of the source and operating conditions. A new prototype multifunctional portable Bi2Te3-based thermoelectric camping lamp (TECL) has been designed and fabricated. Ten parallel light-emitting diodes were lit directly by a Bi2Te3-based thermoelectric generator (TEG). The highest short-circuit current of 0.38 A and open-circuit voltage of 4.2 V were obtained at temperature difference of 115 K. This TECL is attractive for use in multifunctional and extreme applications as it integrates a portable heat source, high-performance TEG, and power management unit.

Controllable fabrication of ultrafine oblique organic nanowire arrays and their application in energy harvesting

NASA Astrophysics Data System (ADS)

Zhang, Lu; Cheng, Li; Bai, Suo; Su, Chen; Chen, Xiaobo; Qin, Yong

2015-01-01

Ultrafine organic nanowire arrays (ONWAs) with a controlled direction were successfully fabricated by a novel one-step Faraday cage assisted plasma etching method. The mechanism of formation of nanowire arrays is proposed; the obliquity and aspect ratio can be accurately controlled from approximately 0° to 90° via adjusting the angle of the sample and the etching time, respectively. In addition, the ONWAs were further utilized to improve the output of the triboelectric nanogenerator (TENG). Compared with the output of TENG composed of vertical ONWAs, the open-circuit voltage, short-circuit current and inductive charges were improved by 73%, 150% and 98%, respectively. This research provides a convenient and practical method to fabricate ONWAs with various obliquities on different materials, which can be used for energy harvesting.

Controllable fabrication of ultrafine oblique organic nanowire arrays and their application in energy harvesting.

PubMed

Zhang, Lu; Cheng, Li; Bai, Suo; Su, Chen; Chen, Xiaobo; Qin, Yong

2015-01-28

Ultrafine organic nanowire arrays (ONWAs) with a controlled direction were successfully fabricated by a novel one-step Faraday cage assisted plasma etching method. The mechanism of formation of nanowire arrays is proposed; the obliquity and aspect ratio can be accurately controlled from approximately 0° to 90° via adjusting the angle of the sample and the etching time, respectively. In addition, the ONWAs were further utilized to improve the output of the triboelectric nanogenerator (TENG). Compared with the output of TENG composed of vertical ONWAs, the open-circuit voltage, short-circuit current and inductive charges were improved by 73%, 150% and 98%, respectively. This research provides a convenient and practical method to fabricate ONWAs with various obliquities on different materials, which can be used for energy harvesting.

SnO 2 nanowires decorated with forsythia-like TiO 2 for photoenergy conversion

DOE PAGES

Park, Ik Jae; Park, Sangbaek; Kim, Dong Hoe; ...

2017-05-17

Here, we report forsythia-like TiO 2-decorated SnO 2 nanowires on fluorine-doped SnO 2 electrode as a photoelectrode of dye-sensitized solar cells. When SnO 2 nanowires grown via vapor-liquid-solid reaction were soaked in TiCl 4 solution, leaf-shaped rutile TiO 2 was grown onto the surface of the nanowires. The TiO 2 decoration increases the short circuit current (J sc), open circuit voltage (V oc) and fill factor (FF) of dye-sensitized solar cells. Further, electron lifetime increased by employing an atomic-layer-deposited TiO 2 nanoshell between the TiO 2 leaves and the SnO 2 nanowire, due to preventing charge recombination at the nanowire/electrolytemore » interface.« less

Design and Fabrication of Multifunctional Portable Bi2Te3-Based Thermoelectric Camping Lamp

NASA Astrophysics Data System (ADS)

Zhou, Yi; Li, Gongping

2018-07-01

Camping lamps have been widely used in the lighting, power supply, and intelligent electronic equipment fields. However, applications of traditional chemical and solar camping lamps are largely limited by the physical size of the source and operating conditions. A new prototype multifunctional portable Bi2Te3-based thermoelectric camping lamp (TECL) has been designed and fabricated. Ten parallel light-emitting diodes were lit directly by a Bi2Te3-based thermoelectric generator (TEG). The highest short-circuit current of 0.38 A and open-circuit voltage of 4.2 V were obtained at temperature difference of 115 K. This TECL is attractive for use in multifunctional and extreme applications as it integrates a portable heat source, high-performance TEG, and power management unit.

Low Light Diagnostics in Thin-Film Photovoltaics

NASA Astrophysics Data System (ADS)

Shvydka, Diana; Karpov, Victor; Compaan, Alvin

2003-03-01

We study statistics of the major photovoltaic (PV) parameters such as open circuit voltage, short circuit current and fill factor vs. light intensity on a set of nominally identical CdTe/CdS solar cells. We found the most probable parameter values to change with the light intensity as predicted by the standard diode model, while their relative fluctuations increase dramatically under low light. The crossover light intensity is found below which the relative fluctuations of the PV parameters diverge inversely proportional to the square root of the light intensity. We propose a model where the observed fluctuations are due to lateral nonuniformities in the device structure. In particular, the crossover is attributed to the lateral nonuniformity screening length exceeding the device size. >From the practical standpoint, our study introduces a simple uniformity diagnostic technique.

Fabrication and Characterization of Organic Photovoltaic Cell using Keithley 2400 SMU for efficient solar cell

NASA Astrophysics Data System (ADS)

Hafeez, Hafeez Y.; Iro, Zaharaddeen S.; Adam, Bala I.; Mohammed, J.

2018-04-01

An organic solar cell device or organic photovoltaic cell (OPV) is a class of solar cell that uses conductive organic polymers or small organic molecules for light absorption and charge transport. In this study, we fabricate and characterize an organic photovoltaic cell device and estimated important parameters of the device such as Open Circuit Voltage Voc of 0.28V, Short-Circuit Current Isc of 4.0 × 10-5 A, Maximum Power Pmax of 2.4 × 10-6 W, Fill Factor of 0.214 and the energy conversion efficiency of η=0.00239% were tested using Keithley 2400,source meter under A.M 1.5 (1000/m2) illumination from a Newport Class A solar simulator. Also the I-V characteristics for OPV were drawn.

SnO 2 nanowires decorated with forsythia-like TiO 2 for photoenergy conversion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Ik Jae; Park, Sangbaek; Kim, Dong Hoe

Here, we report forsythia-like TiO 2-decorated SnO 2 nanowires on fluorine-doped SnO 2 electrode as a photoelectrode of dye-sensitized solar cells. When SnO 2 nanowires grown via vapor-liquid-solid reaction were soaked in TiCl 4 solution, leaf-shaped rutile TiO 2 was grown onto the surface of the nanowires. The TiO 2 decoration increases the short circuit current (J sc), open circuit voltage (V oc) and fill factor (FF) of dye-sensitized solar cells. Further, electron lifetime increased by employing an atomic-layer-deposited TiO 2 nanoshell between the TiO 2 leaves and the SnO 2 nanowire, due to preventing charge recombination at the nanowire/electrolytemore » interface.« less

A comparative study of p(+)n and n(+)p InP solar cells made by a closed ampoule diffusion

NASA Technical Reports Server (NTRS)

Faur, M.; Faur, M.; Flood, D. J.; Weinberg, I.; Brinker, D. J.; Goradia, C.; Fatemi, N.; Goradia, M.; Thesling, W.

1991-01-01

The purpose was to demonstrate the possibility of fabricating thermally diffused p(+)n InP solar cells having high open-circuit voltage without sacrificing the short circuit current. The p(+)n junctions were formed by closed-ampoule diffusion of Cd through a 3 to 5 nm thick anodic or chemical phosphorus-rich oxide cap layer grown on n-InP:S Czochralski LEC grown substrates. For solar cells made by thermal diffusion the p(+)n configuration is expected to have a higher efficiency than the n(+)p configuration. It is predicted that the AM0, BOL efficiencies approaching 19 percent should be readily achieved providing that good ohmic front contacts could be realized on the p(+) emitters of thickness lower than 1 micron.

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO 2 Contact

DOE PAGES

Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; ...

2014-09-25

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (~10 nm) of amorphous TiO 2 deposited at 120°C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. Lastly, a hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency ofmore » 19.2%.« less

The 7.5 kW solar array simulator

NASA Technical Reports Server (NTRS)

Robson, R. R.

1975-01-01

A high power solar array simulator capable of providing the input power to simultaneously operate two 30 cm diameter ion thruster power processors was designed, fabricated, and tested. The maximum power point is set to between 150 and 7500 watts representing an open circuit voltage from 50 to 300 volts and a short circuit current from 4 to 36 amps. Illuminated solar cells are used as the control element to provide a true solar cell characteristic and permit the option of simulating changes in this characteristic due to variations in solar intensity and/or temperature of the solar array. This is accomplished by changing the illumination and/or temperature of the control cells. The response of the output to a step change in load closely approximates that of an actual solar array.

Three-dimensional crossbar arrays of self-rectifying Si/SiO 2/Si memristors

DOE PAGES

Li, Can; Han, Lili; Jiang, Hao; ...

2017-06-05

Memristors are promising building blocks for the next generation memory, unconventional computing systems and beyond. Currently common materials used to build memristors are not necessarily compatible with the silicon dominant complementary metal-oxide-semiconductor (CMOS) technology. Furthermore, external selector devices or circuits are usually required in order for large memristor arrays to function properly, resulting in increased circuit complexity. Here we demonstrate fully CMOS-compatible, all-silicon based and self-rectifying memristors that negate the need for external selectors in large arrays. It consists of p- and n-type doped single crystalline silicon electrodes and a thin chemically produced silicon oxide switching layer. The device exhibitsmore » repeatable resistance switching behavior with high rectifying ratio (10 5), high ON/OFF conductance ratio (10 4) and attractive retention at 300 °C. We further build a 5-layer 3-dimensional (3D) crossbar array of 100 nm memristors by stacking fluid supported silicon membranes. The CMOS compatibility and self-rectifying behavior open up opportunities for mass production of memristor arrays and 3D hybrid circuits on full-wafer scale silicon and flexible substrates without increasing circuit complexity.« less

Space-charge limited current in CdTe thin film solar cell

NASA Astrophysics Data System (ADS)

Li, Qiang; Shen, Kai; Li, Xun; Yang, Ruilong; Deng, Yi; Wang, Deliang

2018-04-01

In this study, we demonstrate that space-charge limited current (SCLC) is an intrinsic current shunting leakage in CdTe thin film solar cells. The SCLC leakage channel, which is formed by contact between the front electrode, CdTe, and the back electrode, acts as a metal-semiconductor-metal (MSM) like transport path. The presence of SCLC leaking microchannels in CdTe leads to a band bending at the MSM structure, which enhances minority carrier recombination and thus decreases the minority carrier lifetime in CdTe thin film solar cells. SCLC was found to be a limiting factor both for the fill factor and the open-circuit voltage of CdTe thin film solar cells.

Evaluation program for secondary spacecraft cells: Evaluation of storage methods, open circuit versus continuous trickle charge, Sonotone 3.5 ampere-hour sealed nickel-cadmium secondary spacecraft cells

NASA Technical Reports Server (NTRS)

Thomas, R. E.

1972-01-01

Twenty-five cells were used in a five-year test to compare, after each successive one-year storage period, the discharge and charge characteristics of charged cells on open circuit versus that of cells on continuous trickle charge. The test procedure, instrumentation, and results are described. Based on the test results, the following recommendations were made: (1) If the user's purpose will allow a rejuvenation cycle or two after a long storage period, the open circuit regime will likely give slightly greater capacity. (2) If the user's purpose demands immediately available power following a long storage period, the trickle charge method of storage is definitely the regime to use.

Study program to improve the open-circuit voltage of low resistivity single crystal silicon solar cells

NASA Technical Reports Server (NTRS)

Minnucci, J. A.; Matthei, K. W.

1980-01-01

The results of a 14 month program to improve the open circuit voltage of low resistivity silicon solar cells are described. The approach was based on ion implantation in 0.1- to 10.0-ohm-cm float-zone silicon. As a result of the contract effort, open circuit voltages as high as 645 mV (AMO 25 C) were attained by high dose phosphorus implantation followed by furnace annealing and simultaneous SiO2 growth. One key element was to investigate the effects of bandgap narrowing caused by high doping concentrations in the junction layer. Considerable effort was applied to optimization of implant parameters, selection of furnace annealing techniques, and utilization of pulsed electron beam annealing to minimize thermal process-induced defects in the completed solar cells.

Emerging materials for solar cell applications: electrodeposited CdTe. Second quarter report, May 16-August 15, 1980

DOE Office of Scientific and Technical Information (OSTI.GOV)

Basol, B.; Stafsudd, O.

1980-09-10

Work was centered about improving electroplating processes and cell fabrication techniques, with emphasis being given to three differing n-CdTe/Au Schottky configurations. The highest values of efficiency-related parmeters achieved with a simulated solar irradiation of 100 mW/cm/sup 2/ were 0.57V for open circuit voltage, 0.6 for fill factor, and 6 mA/cm/sup 2/ for short circuit current. Four important parameters are known to control the quality of the Monosolar electrodeposition process and resultant solar cells. They are electrolyte temperature, Te concentration in the solution at a specific pH, deposition or quasi-rest potential, and flow pattern of the electrolyte (stirring). The first threemore » considerations are believed to be fully understood and optimized. Work is underway to further understand the effects of stirring on the diffusion of ionic components and the effects on CdTe film performance. Work was accelerated during the quarter to increase the short circuit current. Parallel programs using laser irradiation of finished CdTe films, heat treatment, and changes in the electrodeposition process itself to recrystallize films were started. The surface etching technique has been highly refined, while the entire cell manufacturing process is now reproducible when defect-free substrates are used.« less

Mapping photovoltaic performance with nanoscale resolution

DOE PAGES

Kutes, Yasemin; Aguirre, Brandon A.; Bosse, James L.; ...

2015-10-16

Photo-conductive AFM spectroscopy (‘pcAFMs’) is proposed as a high-resolution approach for investigating nanostructured photovoltaics, uniquely providing nanoscale maps of photovoltaic (PV) performance parameters such as the short circuit current, open circuit voltage, maximum power, or fill factor. The method is demonstrated with a stack of 21 images acquired during in situ illumination of micropatterned polycrystalline CdTe/CdS, providing more than 42,000 I/V curves spatially separated by ~5 nm. For these CdTe/CdS microcells, the calculated photoconduction ranges from 0 to 700 picoSiemens (pS) upon illumination with ~1.6 suns, depending on location and biasing conditions. Mean short circuit currents of 2 pA, maximummore » powers of 0.5 pW, and fill factors of 30% are determined. The mean voltage at which the detected photocurrent is zero is determined to be 0.7 V. Significantly, enhancements and reductions in these more commonly macroscopic PV performance metrics are observed to correlate with certain grains and grain boundaries, and are confirmed to be independent of topography. Furthermore, these results demonstrate the benefits of nanoscale resolved PV functional measurements, reiterate the importance of microstructural control down to the nanoscale for 'PV devices, and provide a widely applicable new approach for directly investigating PV materials.« less

Magnetically Controlled Variable Transformer

NASA Technical Reports Server (NTRS)

Kleiner, Charles T.

1994-01-01

Improved variable-transformer circuit, output voltage and current of which controlled by use of relatively small current supplied at relatively low power to control windings on its magnetic cores. Transformer circuits of this type called "magnetic amplifiers" because ratio between controlled output power and power driving control current of such circuit large. This ratio - power gain - can be as large as 100 in present circuit. Variable-transformer circuit offers advantages of efficiency, safety, and controllability over some prior variable-transformer circuits.

14 CFR 29.1357 - Circuit protective devices.

Code of Federal Regulations, 2013 CFR

2013-01-01

... devices in the generating system must be designed to de-energize and disconnect faulty power sources and power transmission equipment from their associated buses with sufficient rapidity to provide protection... be designed so that, when an overload or circuit fault exists, it will open the circuit regardless of...

14 CFR 29.1357 - Circuit protective devices.

Code of Federal Regulations, 2014 CFR

2014-01-01

... devices in the generating system must be designed to de-energize and disconnect faulty power sources and power transmission equipment from their associated buses with sufficient rapidity to provide protection... be designed so that, when an overload or circuit fault exists, it will open the circuit regardless of...

14 CFR 29.1357 - Circuit protective devices.

Code of Federal Regulations, 2011 CFR

2011-01-01

... devices in the generating system must be designed to de-energize and disconnect faulty power sources and power transmission equipment from their associated buses with sufficient rapidity to provide protection... be designed so that, when an overload or circuit fault exists, it will open the circuit regardless of...

14 CFR 29.1357 - Circuit protective devices.

Code of Federal Regulations, 2012 CFR

2012-01-01

... devices in the generating system must be designed to de-energize and disconnect faulty power sources and power transmission equipment from their associated buses with sufficient rapidity to provide protection... be designed so that, when an overload or circuit fault exists, it will open the circuit regardless of...

29 CFR 1910.68 - Manlifts.

Code of Federal Regulations, 2013 CFR

2013-07-01

... circuit directly they shall be of the multipole type. (b) Where electronic devices are used they shall be... will be forced straight, tripping the switch and opening the electrical circuit. (8) Step (platform). A... at landings.) (ii) Control of illumination. Lighting of manlift runways shall be by means of circuits...

Photonic quantum information: science and technology.

PubMed

Takeuchi, Shigeki

2016-01-01

Recent technological progress in the generation, manipulation and detection of individual single photons has opened a new scientific field of photonic quantum information. This progress includes the realization of single photon switches, photonic quantum circuits with specific functions, and the application of novel photonic states to novel optical metrology beyond the limits of standard optics. In this review article, the recent developments and current status of photonic quantum information technology are overviewed based on the author's past and recent works.

The photovoltaic properties of an Al In As/InP heterojunctions grown by LPE method

NASA Technical Reports Server (NTRS)

Wang, Edward Y.

1989-01-01

Work is presented on heterojunction solar cells which were studied under the NASA/Arizona State University intern program. The heterojunction solar cells were fabricated by the liquid phase epitaxy method. The basic conversion efficiency was measured at 5 percent. It was determined that a thicker epilayer is needed, and that the density of recombination center should be reduced to give a smaller saturation current and hence a larger open-circuit voltage.

Critical analysis of open circuit voltage and its effect on estimation of irreversible heat for Li-ion pouch cells

NASA Astrophysics Data System (ADS)

Arora, Shashank; Shen, Weixiang; Kapoor, Ajay

2017-05-01

Battery polarisation is not only responsible for reducing battery available capacity but also for controlling heat generation characteristics of batteries. This phenomenon was therefore carefully studied and modelled by Newman, Tiedemann and Gu (NTG). The NTG model is now widely used for simulating battery thermal behaviour and has even been adopted by CD-adapco for their proprietary battery modelling software - Battery Design Studio. The model however revolves around an idealised battery cell. It may thus not be applicable to commercial battery cells. This paper scrutinises the effect of open circuit voltage (OCV), a key parameter in the NTG model, on the irreversible heat generation of a commercial cell under a controlled environment by differentiating the OCV recorded immediately after the current stops flowing through the cell and the OCV corresponding to the equilibrium state of the cell. It is noticed that the NTG model underestimates the irreversible heat generation rates for a 20 Ah Li-ion pouch cell by approximately 0.15 W and 0.22 W for discharge currents at 0.33C and 0.5C at an operating temperature of 27 °C, respectively. It is also observed that the accuracy of the NTG model is significantly improved in simulating thermal behaviour of commercial battery cells when the OCV is representative of the cell equilibrium voltage.

49 CFR 234.213 - Grounds.

Code of Federal Regulations, 2014 CFR

2014-10-01

...: circuits that include track rail; alternating current power distribution circuits that are grounded in the...) Circuits that include track rail; (2) Alternating current power distribution circuits that are grounded in...

An improved method for piezoelectric characterization of polymers for energy harvesting applications

NASA Astrophysics Data System (ADS)

Gusarova, E.; Gusarov, B.; Zakharov, D.; Bousquet, M.; Viala, B.; Cugat, O.; Delamare, J.; Gimeno, L.

2013-12-01

This work presents an improved method for measuring the direct piezoelectric voltage and energy of flexible polymers. Well-controlled stress is applied with a four-point bending system and voltage is measured in real open-circuit conditions. The presented method separates the piezoelectric part from the measurement part by introducing a mechanical switch, allowing instantaneous post-deformation discharge measurements. Oscilloscope and contact-less electrostatic voltmeter are compared. Direct piezoelectric measurements under open-circuit conditions have been performed on commercial PVDF (polyvinylidene fluoride) and its copolymers. Significant differences to data sheet values (close-circuit conditions) are reported and commented.

Wafer-scale development and experimental verification of 0.36 mm2 228 mV open-circuit-voltage solid-state CMOS-compatible glucose fuel cell

NASA Astrophysics Data System (ADS)

Arata, Shigeki; Hayashi, Kenya; Nishio, Yuya; Kobayashi, Atsuki; Nakazato, Kazuo; Niitsu, Kiichi

2018-04-01

The world’s smallest (0.36 mm2) solid-state CMOS-compatible glucose fuel cell, which exhibits an open-circuit voltage (OCV) of 228 mV and a power generation density of 1.32 µW/cm2 with a 30 mM glucose solution, is reported in this paper. Compared with conventional wet etching, dry etching (reactive ion etching) for patterning minimizes damage to the anode and cathode, resulting in a cell with a small size and a high OCV, sufficient for CMOS circuit operation.

Nulling Hall-Effect Current-Measuring Circuit

NASA Technical Reports Server (NTRS)

Sullender, Craig C.; Vazquez, Juan M.; Berru, Robert I.

1993-01-01

Circuit measures electrical current via combination of Hall-effect-sensing and magnetic-field-nulling techniques. Known current generated by feedback circuit adjusted until it causes cancellation or near cancellation of magnetic field produced in toroidal ferrite core by current measured. Remaining magnetic field measured by Hall-effect sensor. Circuit puts out analog signal and digital signal proportional to current measured. Accuracy of measurement does not depend on linearity of sensing components.

Short-circuit current and ionic fluxes in the isolated colonic mucosa of Bufo arenarum.

PubMed

Lew, V L

1970-03-01

1. The unidirectional fluxes of (22)Na, (36)Cl and [(14)C]bicarbonate ions were measured in paired portions of the isolated and short-circuited colonic mucosa of Bufo arenarum, separated from its muscular layer. Pharmacological effects as well as effects of changes in the composition of the nutrient solutions on the electrical parameters of membrane activity (potential difference, short-circuit current and total membrane resistance) are described.2. The net fluxes of both Cl and bicarbonate ions were not significantly different from zero in the absence of electrochemical gradients across the membrane.3. The net Na flux from mucosa to serosa represented a variable proportion of the short-circuit current ranging from 62 to 100%.4. The proportion of membranes with high discrepancies between net Na flux and short-circuit current decreased with the duration of captivity of the toads.5. When Na was entirely replaced by choline in the mucosal bathing solution, the short-circuit current dropped by a variable amount within the range of 64 to 98% of its control values in different membranes. This effect was completely reversible. Similar changes in the serosal solution had no effect.6. The short-circuit current and potential difference were very sensitive to the serosal concentration of bicarbonate ions. In different membranes, 60-100% of the short-circuit current was reversibly abolished by bathing the serosal surface with a bicarbonate-free solution. The mucosal bicarbonate level had no effect on either the potential difference or the short-circuit current. 5 mM bicarbonate in the serosal solution restored at least 50% of the short-circuit control value and full recovery was attained by concentrations near 30 mM bicarbonate.7. Anoxia brought the potential difference and short-circuit current reversibly down to zero in about 50 min.8. Ouabain reduced the short-circuit current up to 80% in about 40 min when present in the serosal solution at a concentration of 10(-4)M. At this or lower concentrations the ouabain effect was reversible. Above this level ouabain produced 100% inhibition in 3-4 hr, but this was no longer reversible. Ouabain had no effect on the short-circuit current either when applied to the mucosal surface or in the absence of Na from the mucosal solution.9. Diamox produced a variable inhibition of the short-circuit current of up to 30% only at concentrations above 10 mM.10. Possible mechanisms are discussed for the appearance of the non-Na component of the short-circuit current. A theory concerning its nature is proposed.

A Facile Methodology for the Development of a Printable and Flexible All-Solid-State Rechargeable Battery.

PubMed

De, Bibekananda; Yadav, Amit; Khan, Salman; Kar, Kamal K

2017-06-14

Development of printable and flexible energy storage devices is one of the most promising technologies for wearable electronics in textile industry. The present work involves the design of a printable and flexible all-solid-state rechargeable battery for wearable electronics in textile applications. Copper-coated carbon fiber is used to make a poly(ethylene oxide) (PEO)-based polymer nanocomposite for a flexible and conductive current collector layer. Lithium iron phosphate (LiFePO 4 ) and titanium dioxide (TiO 2 ) are utilized to prepare the cathode and anode layers, respectively, with PEO and carbon black composites. The PEO- and Li salt-based solid composite separator layer is utilized for the solid-state and safe electrolyte. Fabrication of all these layers and assembly of them through coating on fabrics are performed in the open atmosphere without using any complex processing, as PEO prevents the degradation of the materials in the open atmosphere. The performance of the battery is evaluated through charge-discharge and open-circuit voltage analyses. The battery shows an open-circuit voltage of ∼2.67 V and discharge time ∼2000 s. It shows similar performance at different repeated bending angles (0° to 180°) and continuous bending along with long cycle life. The application of the battery is also investigated for printable and wearable textile applications. Therefore, this printable, flexible, easily processable, and nontoxic battery with this performance has great potential to be used in portable and wearable textile electronics.

Focal plane infrared readout circuit with automatic background suppression

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Yang, Guang (Inventor); Sun, Chao (Inventor); Shaw, Timothy J. (Inventor); Wrigley, Chris J. (Inventor)

2002-01-01

A circuit for reading out a signal from an infrared detector includes a current-mode background-signal subtracting circuit having a current memory which can be enabled to sample and store a dark level signal from the infrared detector during a calibration phase. The signal stored by the current memory is subtracted from a signal received from the infrared detector during an imaging phase. The circuit also includes a buffered direct injection input circuit and a differential voltage readout section. By performing most of the background signal estimation and subtraction in a current mode, a low gain can be provided by the buffered direct injection input circuit to keep the gain of the background signal relatively small, while a higher gain is provided by the differential voltage readout circuit. An array of such readout circuits can be used in an imager having an array of infrared detectors. The readout circuits can provide a high effective handling capacity.

Trade Electricity. Signal Wiring--Level 1. Standardized Curriculum.

ERIC Educational Resources Information Center

New York City Board of Education, Brooklyn, NY. Office of Occupational and Career Education.

This curriculum guide consists of nine modules on signal wiring, one of the three divisions of the standardized trade electricity curriculum in high schools in New York City. The modules cover the following subjects: bells, double contact pushbuttons, annunciator circuits, open circuit burglar alarms, closed circuit burglar alarms, fire alarms,…