Improved High/Low Junction Silicon Solar Cell

NASA Technical Reports Server (NTRS)

Neugroschel, A.; Pao, S. C.; Lindholm, F. A.; Fossum, J. G.

1986-01-01

Method developed to raise value of open-circuit voltage in silicon solar cells by incorporating high/low junction in cell emitter. Power-conversion efficiency of low-resistivity silicon solar cell considerably less than maximum theoretical value mainly because open-circuit voltage is smaller than simple p/n junction theory predicts. With this method, air-mass-zero opencircuit voltage increased from 600 mV level to approximately 650 mV.

The ac power line protection for an IEEE 587 Class B environment

NASA Technical Reports Server (NTRS)

Roehr, W. D.; Clark, O. M.

1984-01-01

The 587B series of protectors are unique, low clamping voltage transient suppressors to protect ac-powered equipment from the 6000V peak open-circuit voltage and 3000A short circuit current as defined in IEEE standard 587 for Category B transients. The devices, which incorporate multiple-stage solid-state protector components, were specifically designed to operate under multiple exposures to maximum threat levels in this severe environment. The output voltage peaks are limited to 350V under maximum threat conditions for a 120V ac power line, thus providing adequate protection to vulnerable electronic equipment. The principle of operation and test performance data is discussed.

Technique for enhancing the power output of an electrostatic generator employing parametric resonance

DOEpatents

Post, Richard F.

2016-02-23

A circuit-based technique enhances the power output of electrostatic generators employing an array of axially oriented rods or tubes or azimuthal corrugated metal surfaces for their electrodes. During generator operation, the peak voltage across the electrodes occurs at an azimuthal position that is intermediate between the position of minimum gap and maximum gap. If this position is also close to the azimuthal angle where the rate of change of capacity is a maximum, then the highest rf power output possible for a given maximum allowable voltage at the minimum gap can be attained. This rf power output is then coupled to the generator load through a coupling condenser that prevents suppression of the dc charging potential by conduction through the load. Optimized circuit values produce phase shifts in the rf output voltage that allow higher power output to occur at the same voltage limit at the minimum gap position.

Molecular-Beam-Epitaxy Program

NASA Technical Reports Server (NTRS)

Sparks, Patricia D.

1988-01-01

Molecular Beam Epitaxy (MBE) computer program developed to aid in design of single- and double-junction cascade cells made of silicon. Cascade cell has efficiency 1 or 2 percent higher than single cell, with twice the open-circuit voltage. Input parameters include doping density, diffusion lengths, thicknesses of regions, solar spectrum, absorption coefficients of silicon (data included for 101 wavelengths), and surface recombination velocities. Results include maximum power, short-circuit current, and open-circuit voltage. Program written in FORTRAN IV.

A High-Voltage Integrated Circuit Engine for a Dielectrophoresis-based Programmable Micro-Fluidic Processor

PubMed Central

Current, K. Wayne; Yuk, Kelvin; McConaghy, Charles; Gascoyne, Peter R. C.; Schwartz, Jon A.; Vykoukal, Jody V.; Andrews, Craig

2010-01-01

A high-voltage (HV) integrated circuit has been demonstrated to transport droplets on programmable paths across its coated surface. This chip is the engine for a dielectrophoresis (DEP)-based micro-fluidic lab-on-a-chip system. This chip creates DEP forces that move and help inject droplets. Electrode excitation voltage and frequency are variable. With the electrodes driven with a 100V peak-to-peak periodic waveform, the maximum high-voltage electrode waveform frequency is about 200Hz. Data communication rate is variable up to 250kHz. This demonstration chip has a 32×32 array of nominally 100V electrode drivers. It is fabricated in a 130V SOI CMOS fabrication technology, dissipates a maximum of 1.87W, and is about 10.4 mm × 8.2 mm. PMID:23989241

Constant-current regulator improves tunnel diode threshold-detector performance

NASA Technical Reports Server (NTRS)

Cancro, C. A.

1965-01-01

Grounded-base transistor is placed in a tunnel diode threshold detector circuit, and a bias voltage is applied to the tunnel diode. This provides the threshold detector with maximum voltage output and overload protection.

Development of a digital solar simulator based on full-bridge converter

NASA Astrophysics Data System (ADS)

Liu, Chen; Feng, Jian; Liu, Zhilong; Tong, Weichao; Ji, Yibo

2014-02-01

With the development of solar photovoltaic, distribution schemes utilized in power grid had been commonly application, and photovoltaic (PV) inverter is an essential equipment in grid. In this paper, a digital solar simulator based on full-bridge structure is presented. The output characteristic curve of system is electrically similar to silicon solar cells, which can greatly simplify research methods of PV inverter, improve the efficiency of research and development. The proposed simulator consists on a main control board based on TM320F28335, phase-shifted zero-voltage-switching (ZVS) DC-DC full-bridge converter and voltage and current sampling circuit, that allows emulating the voltage-current curve with the open-circuit voltage (Voc) of 900V and the short-circuit current (Isc) of 18A .When the system connected to a PV inverter, the inverter can quickly track from the open-circuit to the maximum power point and keep stability.

A Compound Algorithm for Maximum Power Point Tracking Used in Laser Power Beaming

NASA Astrophysics Data System (ADS)

Chen, Cheng; Liu, Qiang; Gao, Shan; Teng, Yun; Cheng, Lin; Yu, Chengtao; Peng, Kai

2018-03-01

With the high voltage intelligent substation developing in a pretty high speed, more and more artificial intelligent techniques have been incorporated into the power devices to meet the automation needs. For the sake of the line maintenance staff’s safety, the high voltage isolating switch draws great attention among the most important power devices because of its capability of connecting and disconnecting the high voltage circuit. However, due to the very high level voltage of the high voltage isolating switch’s working environment, the power supply system of the surveillance devices could suffer from great electromagnetic interference. Laser power beaming exhibits its merits in such situation because it can provide steady power from a distance despite the day or the night. Then the energy conversion efficiency arises as a new concern. To make as much use of the laser power as possible, our work mainly focuses on extracting maximum power from the photovoltaic (PV) panel. In this paper, we proposed a neural network based algorithm which relates both the intrinsic and the extrinsic features of the PV panel to the proportion of the voltage at the maximum power point (MPP) to the open circuit voltage of the PV panel. Simulations and experiments were carried out to verify the validness of our algorithm.

Modeling power flow in the induction cavity with a two dimensional circuit simulation

NASA Astrophysics Data System (ADS)

Guo, Fan; Zou, Wenkang; Gong, Boyi; Jiang, Jihao; Chen, Lin; Wang, Meng; Xie, Weiping

2017-02-01

We have proposed a two dimensional (2D) circuit model of induction cavity. The oil elbow and azimuthal transmission line are modeled with one dimensional transmission line elements, while 2D transmission line elements are employed to represent the regions inward the azimuthal transmission line. The voltage waveforms obtained by 2D circuit simulation and transient electromagnetic simulation are compared, which shows satisfactory agreement. The influence of impedance mismatch on the power flow condition in the induction cavity is investigated with this 2D circuit model. The simulation results indicate that the peak value of load voltage approaches the maximum if the azimuthal transmission line roughly matches the pulse forming section. The amplitude of output transmission line voltage is strongly influenced by its impedance, but the peak value of load voltage is insensitive to the actual output transmission line impedance. When the load impedance raises, the voltage across the dummy load increases, and the pulse duration at the oil elbow inlet and insulator stack regions also slightly increase.

30 CFR 75.825 - Power centers.

Code of Federal Regulations, 2011 CFR

2011-07-01

..., and be designed and installed as follows: (1) Rated for the maximum phase-to-phase voltage of the circuit; (2) Rated for the full-load current of the circuit that is supplied power through the device. (3... current of the circuit or causes the current to be interrupted automatically before the disconnecting...

Maximum permissible voltage of YBCO coated conductors

NASA Astrophysics Data System (ADS)

Wen, J.; Lin, B.; Sheng, J.; Xu, J.; Jin, Z.; Hong, Z.; Wang, D.; Zhou, H.; Shen, X.; Shen, C.

2014-06-01

Superconducting fault current limiter (SFCL) could reduce short circuit currents in electrical power system. One of the most important thing in developing SFCL is to find out the maximum permissible voltage of each limiting element. The maximum permissible voltage is defined as the maximum voltage per unit length at which the YBCO coated conductors (CC) do not suffer from critical current (Ic) degradation or burnout. In this research, the time of quenching process is changed and voltage is raised until the Ic degradation or burnout happens. YBCO coated conductors test in the experiment are from American superconductor (AMSC) and Shanghai Jiao Tong University (SJTU). Along with the quenching duration increasing, the maximum permissible voltage of CC decreases. When quenching duration is 100 ms, the maximum permissible of SJTU CC, 12 mm AMSC CC and 4 mm AMSC CC are 0.72 V/cm, 0.52 V/cm and 1.2 V/cm respectively. Based on the results of samples, the whole length of CCs used in the design of a SFCL can be determined.

Results of module electrical measurement of the DOE 46-kilowatt procurement

NASA Technical Reports Server (NTRS)

Curtis, H. B.

1978-01-01

Current-voltage measurements have been made on terrestrial solar cell modules of the DOE/JPL Low Cost Silicon Solar Array procurement. Data on short circuit current, open circuit voltage, and maximum power for the four types of modules are presented in normalized form, showing distribution of the measured values. Standard deviations from the mean values are also given. Tests of the statistical significance of the data are discussed.

High-voltage solar-cell chip

NASA Technical Reports Server (NTRS)

Kapoor, V. J.; Valco, G. J.; Skebe, G. G.; Evans, J. C., Jr.

1985-01-01

Integrated circuit technology has been successfully applied to the design and fabrication of 0.5 x 0.5-cm planar multijunction solar-cell chips. Each of these solar cells consisted of six voltage-generating unit cells monolithically connected in series and fabricated on a 75-micron-thick, p-type, single crystal, silicon substrate. A contact photolithic process employing five photomask levels together with a standard microelectronics batch-processing technique were used to construct the solar-cell chip. The open-circuit voltage increased rapidly with increasing illumination up to 5 AM1 suns where it began to saturate at the sum of the individual unit-cell voltages at a maximum of 3.0 V. A short-circuit current density per unit cell of 240 mA/sq cm was observed at 10 AM1 suns.

Battery voltage-balancing applications of disk-type radial mode Pb(Zr • Ti)O3 ceramic resonator

NASA Astrophysics Data System (ADS)

Thenathayalan, Daniel; Lee, Chun-gu; Park, Joung-hu

2017-10-01

In this paper, we propose a novel technique to build a charge-balancing circuit for series-connected battery strings using various kinds of disk-type ceramic Pb(Zr • Ti)O3 piezoelectric resonators (PRs). The use of PRs replaces the whole external battery voltage-balancer circuit, which consists mainly of a bulky magnetic element. The proposed technique is validated using different ceramic PRs and the results are analyzed in terms of their physical properties. A series-connected battery string with a voltage rating of 61.5 V is set as a hardware prototype under test, then the power transfer efficiency of the system is measured at different imbalance voltages. The performance of the proposed battery voltage-balancer circuit employed with a PR is also validated through hardware implementation. Furthermore, the temperature distribution image of the PR is obtained to compare power transfer efficiency and thermal stress under different operating conditions. The test results show that the battery voltage-balancer circuit can be successfully implemented using PRs with the maximum power conversion efficiency of over 96% for energy storage systems.

A novel ZVS high voltage power supply for micro-channel plate photomultiplier tubes

NASA Astrophysics Data System (ADS)

Pei, Chengquan; Tian, Jinshou; Liu, Zhen; Qin, Hong; Wu, Shengli

2017-04-01

A novel resonant high voltage power supply (HVPS) with zero voltage switching (ZVS), to reduce the voltage stress on switching devices and improve conversion efficiency, is proposed. The proposed HVPS includes a drive circuit, a transformer, several voltage multiplying circuits, and a regulator circuit. The HVPS contains several secondary windings that can be precisely regulated. The proposed HVPS performed better than the traditional resistor voltage divider, which requires replacing matching resistors resulting in resistor dispersibility in the Micro-Channel Plate (MCP). The equivalent circuit of the proposed HVPS was established and the operational principle analyzed. The entire switching element can achieve ZVS, which was validated by a simulation and experiments. The properties of this HVPS were tested including minimum power loss (240 mW), maximum power loss (1 W) and conversion efficiency (85%). The results of this research are that the proposed HVPS was suitable for driving the micro-channel plate photomultiplier tube (MCP-PMT). It was therefore adopted to test the MCP-PMT, which will be used in Daya Bay reactor neutrino experiment II in China.

Modification of the fault logic circuit of a high-energy linear accelerator to accommodate selectively coded, large-field wedges.

PubMed

Miller, R W; van de Geijn, J

1987-01-01

A modification to the fault logic circuit that controls the collimator (COLL) fault is described. This modification permits the use of large-field wedges by adding an additional input into the reference voltage that determines the fault condition. The resistor controlling the amount of additional voltage is carried on board each wedge, within the wedge plug. This allows each wedge to determine its own, individual field size limit. Additionally, if no coding resistor is provided, the factory-supplied reference voltage is used, which sets the maximum allowable field size to 15 cm. This permits the use of factory-supplied wedges in conjunction with selected, large-field wedges, allowing proper sensing of the field size maximum in all conditions.

Voltages induced by lightning strokes and ground-faults on a coaxial telecom circuit enclosed inside a composite earthwire. Part II: lightning induced voltages ant composite earthwire tehnical design

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anzanel, P.; Kouteynikoff, P.

1985-02-01

This Part II presents theorical and experimental work about interference generated by lightning strokes in a telecommunication coaxial circuit enclosed inside a composite earthwire for overhead transmission lines. Sinusoidal steady state and surge measurements of the composite earthwire susceptibility to interference (transfer impedance) have been carried out. Induced voltages have been calculated using an original double sampling FFT method whose validity has been checked by measurements on a test line. Finally, it is shown how the cable design can be improved and maximum induced voltage values are given.

Low-voltage harmonic multiplying gyrotron traveling-wave amplifier in G band

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yeh, Y. S.; Guo, Y. W.; Kao, B. H.

Harmonic multiplying operation in a gyrotron traveling-wave amplifier (gyro-TWA) permits for magnetic field reduction and frequency multiplication. Lowering a beam voltage is an important step toward miniaturization of a harmonic multiplying gyro-TWA. However, the additional degree of freedom that is provided by the multitude cyclotron harmonics in a low-voltage harmonic multiplying gyro-TWA still easily generates various competing modes. An improved mode-selective circuit, using circular waveguides with various radii, can provide the rejection points within the frequency range to suppress competing modes. Simulated results reveal that the mode-selective circuit can provide an attenuation of more than 14 dB to suppress the competingmore » modes. Furthermore, the performance of the gyro-TWA is analyzed for studying the sensitivity of the saturated output power and full width at half maximum bandwidth of the gyro-TWA to the beam voltage and the magnetic field. A stable low-voltage harmonic multiplying gyro-TWA with the mode-selective circuit is predicted to yield a peak output power of 24 kW at 200.4 GHz, corresponding to a saturated gain of 56 dB at an interaction efficiency of 20%. The full width at half maximum bandwidth is 3.0 GHz.« less

Electronic ripple indicator

NASA Technical Reports Server (NTRS)

Davidson, J. K.; Houck, W. H.

1971-01-01

Electronic circuit for monitoring excessive ripple voltage on dc power lines senses voltage variations from few millivolts to maximum of 10 volts rms. Instrument is used wherever power supply fluctuations might endanger system operations or damage equipment. Device is inexpensive and easily packaged in small chassis.

A Low Input Current and Wide Conversion Ratio Buck Regulator with 75% Efficiency for High-Voltage Triboelectric Nanogenerators

NASA Astrophysics Data System (ADS)

Luo, Li-Chuan; Bao, De-Chun; Yu, Wu-Qi; Zhang, Zhao-Hua; Ren, Tian-Ling

2016-01-01

It is meaningful to research the Triboelectric Nanogenerators (TENG), which can create electricity anywhere and anytime. There are many researches on the structures and materials of TENG to explain the phenomenon that the maximum voltage is stable and the current is increasing. The output voltage of the TENG is high about 180-400 V, and the output current is small about 39 μA, which the electronic devices directly integration of TENG with Li-ion batteries will result in huge energy loss due to the ultrahigh TENG impedance. A novel interface circuit with the high-voltage buck regulator for TENG is introduced firstly in this paper. The interface circuit can transfer the output signal of the TENG into the signal fit to a lithium ion battery. Through the circuit of the buck regulator, the average output voltage is about 4.0 V and the average output current is about 1.12 mA. Further, the reliability and availability for the lithium ion battery and the circuit are discussed. The interface circuit is simulated using the Cadence software and verified through PCB experiment. The buck regulator can achieve 75% efficiency for the High-Voltage TENG. This will lead to a research hot and industrialization applications.

Development and investigation of silicon converter beta radiation 63Ni isotope

NASA Astrophysics Data System (ADS)

Krasnov, A. A.; Legotin, S. A.; Murashev, V. N.; Didenko, S. I.; Rabinovich, O. I.; Yurchuk, S. Yu; Omelchenko, Yu K.; Yakimov, E. B.; Starkov, V. V.

2016-02-01

In this paper the results of the creation and researching characteristics of, experimental betavoltaic converters (BVC), based on silicon are discussed. It was presented the features of structural and technological performance of planar 2 D- structure of BVC. To study the parameters of the converter stream the beta particles of the radioisotope was simulated by 63Ni electron flux from scanning electron microscope. It was investigated the dependence of the collecting electrons efficiency from the beam energy current-voltage characteristic was measured when irradiated by an electron beam, from which the value of the short-circuit current density equal to 126 nA / cm2 and the value of the open circuit voltage of 150 mV were obtained. The maximum power density at 70 mV is 9.5 nW / cm2, and the conversion efficiency is 2.1%. It was presented the results of experimental studies of the current-voltage characteristics of samples by irradiating a film 63Ni. The values of load voltage 111 mV and short circuit current density of 27 nA / cm2 were obtained. Maximum power density was 1.52 nW / cm2.

Electrical insulation design requirements and reliability goals

NASA Astrophysics Data System (ADS)

Ross, R. G., Jr.

1983-11-01

The solar cells in a photovoltaic module which must be electrically isolated from module exterior surfaces to satisfy a variety of safety and operating considerations are discussed. The performance and reliability of the insulation system are examined. Technical requirements involve the capability of withstanding the differential voltage from the solar cells to the module frame. The maximum system voltage includes consideration of maximum open circuit array voltages achieved under low-temperature, high-irradiance conditions, and transient overvoltages due to system feedback of lightning transients. The latter is bounded by the characteristics of incorporated voltage limiting devices such as MOVs.

A novel power converter for photovoltaic applications

NASA Astrophysics Data System (ADS)

Yuvarajan, S.; Yu, Dachuan; Xu, Shanguang

A simple and economical power conditioner to convert the power available from solar panels into 60 Hz ac voltage is described. The raw dc voltage from the solar panels is converted to a regulated dc voltage using a boost converter and a large capacitor and the dc output is then converted to 60 Hz ac using a bridge inverter. The ratio between the load current and the short-circuit current of a PV panel at maximum power point is nearly constant for different insolation (light) levels and this property is utilized in designing a simple maximum power point tracking (MPPT) controller. The controller includes a novel arrangement for sensing the short-circuit current without disturbing the operation of the PV panel and implementing MPPT. The switching losses in the inverter are reduced by using snubbers. The results obtained on an experimental converter are presented.

Programmable high-output-impedance, large-voltage compliance, microstimulator for low-voltage biomedical applications.

PubMed

Farahmand, Sina; Maghami, Mohammad Hossein; Sodagar, Amir M

2012-01-01

This paper reports on the design of a programmable, high output impedance, large voltage compliance microstimulator for low-voltage biomedical applications. A 6-bit binary-weighted digital to analog converter (DAC) is used to generate biphasic stimulus current pulses. A compact current mirror with large output voltage compliance and high output resistance conveys the current pulses to the target tissue. Designed and simulated in a standard 0.18µm CMOS process, the microstimulator circuit is capable of delivering a maximum stimulation current of 160µA to a 10-kΩ resistive load. Operated at a 1.8-V supply voltage, the output stage exhibits a voltage compliance of 1.69V and output resistance of 160MΩ at full scale stimulus current. Layout of the core microelectrode circuit measures 25.5µm×31.5µm.

Influence of a MoOx interlayer on the open-circuit voltage in organic photovoltaic cells

NASA Astrophysics Data System (ADS)

Zou, Yunlong; Holmes, Russell J.

2013-07-01

Metal-oxides have been used as interlayers at the anode-organic interface in organic photovoltaic cells (OPVs) to increase the open-circuit voltage (VOC). We examine the role of MoOx in determining the maximum VOC in a planar heterojunction OPV and find that the interlayer strongly affects the temperature dependence of VOC. Boron subphthalocyanine chloride (SubPc)-C60 OPVs that contain no interlayer show a maximum VOC of 1.2 V at low temperature, while those with MoOx show no saturation, reaching VOC > 1.4 V. We propose that the MoOx-SubPc interface forms a Schottky junction that provides an additional contribution to VOC at low temperature.

An inherent curvature-compensated voltage reference using non-linearity of gate coupling coefficient

NASA Astrophysics Data System (ADS)

Hande, Vinayak; Shojaei Baghini, Maryam

2015-08-01

A novel current-mode voltage reference circuit which is capable of generating sub-1 V output voltage is presented. The proposed architecture exhibits the inherent curvature compensation ability. The curvature compensation is achieved by utilizing the non-linear behavior of gate coupling coefficient to compensate non-linear temperature dependence of base-emitter voltage. We have also utilized the developments in CMOS process to reduce power and area consumption. The proposed voltage reference is analyzed theoretically and compared with other existing methods. The circuit is designed and simulated in 180 nm mixed-mode CMOS UMC technology which gives a reference level of 246 mV. The minimum required supply voltage is 1 V with maximum current drawn of 9.24 μA. A temperature coefficient of 9 ppm/°C is achieved over -25 to 125 °C temperature range. The reference voltage varies by ±11 mV across process corners. The reference circuit shows the line sensitivity of 0.9 mV/V with area consumption of 100 × 110 μm2

Design of DSP-based high-power digital solar array simulator

NASA Astrophysics Data System (ADS)

Zhang, Yang; Liu, Zhilong; Tong, Weichao; Feng, Jian; Ji, Yibo

2013-12-01

To satisfy rigid performance specifications, a feedback control was presented for zoom optical lens plants. With the increasing of global energy consumption, research of the photovoltaic(PV) systems get more and more attention. Research of the digital high-power solar array simulator provides technical support for high-power grid-connected PV systems research.This paper introduces a design scheme of the high-power digital solar array simulator based on TMS320F28335. A DC-DC full-bridge topology was used in the system's main circuit. The switching frequency of IGBT is 25kHz.Maximum output voltage is 900V. Maximum output current is 20A. Simulator can be pre-stored solar panel IV curves.The curve is composed of 128 discrete points .When the system was running, the main circuit voltage and current values was feedback to the DSP by the voltage and current sensors in real-time. Through incremental PI,DSP control the simulator in the closed-loop control system. Experimental data show that Simulator output voltage and current follow a preset solar panels IV curve. In connection with the formation of high-power inverter, the system becomes gridconnected PV system. The inverter can find the simulator's maximum power point and the output power can be stabilized at the maximum power point (MPP).

Two years of on-orbit gallium arsenide performance from the LIPS solar cell panel experiment

NASA Technical Reports Server (NTRS)

Francis, R. W.; Betz, F. E.

1985-01-01

The LIPS on-orbit performance of the gallium arsenide panel experiment was analyzed from flight operation telemetry data. Algorithms were developed to calculate the daily maximum power and associated solar array parameters by two independent methods. The first technique utilizes a least mean square polynomial fit to the power curve obtained with intensity and temperature corrected currents and voltages; whereas, the second incorporates an empirical expression for fill factor based on an open circuit voltage and the calculated series resistance. Maximum power, fill factor, open circuit voltage, short circuit current and series resistance of the solar cell array are examined as a function of flight time. Trends are analyzed with respect to possible mechanisms which may affect successive periods of output power during 2 years of flight operation. Degradation factors responsible for the on-orbit performance characteristics of gallium arsenide are discussed in relation to the calculated solar cell parameters. Performance trends and the potential degradation mechanisms are correlated with existing laboratory and flight data on both gallium arsenide and silicon solar cells for similar environments.

Meta-analysis of Microbial Fuel Cells Using Waste Substrates.

PubMed

Dowdy, F Ryan; Kawakita, Ryan; Lange, Matthew; Simmons, Christopher W

2018-05-01

Microbial fuel cell experimentation using waste streams is an increasingly popular field of study. One obstacle to comparing studies has been the lack of consistent conventions for reporting results such that meta-analysis can be used for large groups of experiments. Here, 134 unique microbial fuel cell experiments using waste substrates were compiled for analysis. Findings include that coulombic efficiency correlates positively with volumetric power density (p < 0.001), negatively with working volume (p < 0.05), and positively with percentage removal of chemical oxygen demand (p < 0.005). Power density in mW/m 2 correlates positively with chemical oxygen demand loading (p < 0.005), and positively with maximum open-circuit voltage (p < 0.05). Finally, single-chamber versus double-chamber reactor configurations differ significantly in maximum open-circuit voltage (p < 0.005). Multiple linear regression to predict either power density or maximum open-circuit voltage produced no significant models due to the amount of multicollinearity between predictor variables. Results indicate that statistically relevant conclusions can be drawn from large microbial fuel cell datasets. Recommendations for future consistency in reporting results following a MIAMFCE convention (Minimum Information About a Microbial Fuel Cell Experiment) are included.

Series circuit of organic thin-film solar cells for conversion of water into hydrogen.

PubMed

Aoki, Atsushi; Naruse, Mitsuru; Abe, Takayuki

2013-07-22

A series circuit of bulk hetero-junction (BHJ) organic thin-film solar cells (OSCs) is investigated for electrolyzing water to gaseous hydrogen and oxygen. The BHJ OSCs applied consist of poly(3-hexylthiophene) as a donor and [6,6]-phenyl C61 butyric acid methyl ester as an acceptor. A series circuit of six such OSC units has an open circuit voltage (V(oc)) of 3.4 V, which is enough to electrolyze water. The short circuit current (J(sc)), fill factor (FF), and energy conversion efficiency (η) are independent of the number of unit cells. A maximum electric power of 8.86 mW cm(-2) is obtained at the voltage of 2.35 V. By combining a water electrolysis cell with the series circuit solar cells, the electrolyzing current and voltage obtained are 1.09 mA and 2.3 V under a simulated solar light irradiation (100 mW cm(-2), AM1.5G), and in one hour 0.65 mL hydrogen is generated. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The design of high dynamic range ROIC for IRFPAs

NASA Astrophysics Data System (ADS)

Jiang, Dazhao; Liang, Qinghua; Zhang, Qiwen; Chen, Honglei; Ding, Ruijun

2015-10-01

The charge packet readout integrated circuit (ROIC) technology for the IRFPAs is introduced, which can realize that every pixel achieves a very high capacity of the electrons storage, and it also improves the performance of the SNR and reduces the saturation possibility of the pixels. The ROIC for the LWIR requires ability that obtaining high capacity for storing electrons. For the conventional ROIC, the maximum charge capacity is determined by the integration capacitance and the operating voltage, it can achieve a high charge capacity through increasing the area of the integration capacitor or raising the operating voltage. And this paper would introduce a digital method of ROIC that can achieve a very high charge capacity. The circuit architecture of this approach includes the following parts, a preamplifier, a comparator, a counter, and memory arrays. And the maximum charge capacity of the pixel is determined by the counter bits. This new method can achieve a high charge capacity more than 1Ge- every pixel and output the digital signal directly, while that of conventional ROIC is less than 50Me- and output the analog signal from the pixel. In this new circuit, the comparator is a important module, as the integration voltage value need compare with threshold voltage through the comparator all the time during the integration period, and we will discuss the influence of the comparator. This work design the circuit with the CSMC 0.35um CMOS technology, and the simulation use the spectre model.

250 kV 6 mA compact Cockcroft-Walton high-voltage power supply.

PubMed

Ma, Zhan-Wen; Su, Xiao-Dong; Lu, Xiao-Long; Wei, Zhen; Wang, Jun-Run; Huang, Zhi-Wu; Miao, Tian-You; Su, Tong-Ling; Yao, Ze-En

2016-08-01

A compact power supply system for a compact neutron generator has been developed. A 4-stage symmetrical Cockcroft-Walton circuit is adopted to produce 250 kV direct current high-voltage. A 2-stage 280 kV isolation transformer system is used to drive the ion source power supply. For a compact structure, safety, and reliability during the operation, the Cockcroft-Walton circuit and the isolation transformer system are enclosed in an epoxy vessel containing the transformer oil whose size is about ∅350 mm × 766 mm. Test results indicate that the maximum output voltage of the power supply is 282 kV, and the stability of the output voltage is better than 0.63% when the high voltage power supply is operated at 250 kV, 6.9 mA with the input voltage varying ±10%.

250 kV 6 mA compact Cockcroft-Walton high-voltage power supply

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Zhan-Wen; Su, Xiao-Dong; Wei, Zhen

A compact power supply system for a compact neutron generator has been developed. A 4-stage symmetrical Cockcroft-Walton circuit is adopted to produce 250 kV direct current high-voltage. A 2-stage 280 kV isolation transformer system is used to drive the ion source power supply. For a compact structure, safety, and reliability during the operation, the Cockcroft-Walton circuit and the isolation transformer system are enclosed in an epoxy vessel containing the transformer oil whose size is about ∅350 mm × 766 mm. Test results indicate that the maximum output voltage of the power supply is 282 kV, and the stability of themore » output voltage is better than 0.63% when the high voltage power supply is operated at 250 kV, 6.9 mA with the input voltage varying ±10%.« less

High voltage bus and auxiliary heater control system for an electric or hybrid vehicle

DOEpatents

Murty, Balarama Vempaty

2000-01-01

A control system for an electric or hybrid electric vehicle includes a vehicle system controller and a control circuit having an electric immersion heater. The heater is electrically connected to the vehicle's high voltage bus and is thermally coupled to a coolant loop containing a heater core for the vehicle's climate control system. The system controller responds to cabin heat requests from the climate control system by generating a pulse width modulated signal that is used by the control circuit to operate the heater at a duty cycle appropriate for the amount of cabin heating requested. The control system also uses the heater to dissipate excess energy produced by an auxiliary power unit and to provide electric braking when regenerative braking is not desirable and manual braking is not necessary. The control system further utilizes the heater to provide a safe discharge of a bank of energy storage capacitors following disconnection of the battery or one of the high voltage connectors used to transmit high voltage operating power to the various vehicle systems. The control circuit includes a high voltage clamping circuit that monitors the voltage on the bus and operates the heater to clamp down the bus voltage when it exceeds a pre-selected maximum voltage. The control system can also be used to phase in operation of the heater when the bus voltage exceeds a lower threshold voltage and can be used to phase out the auxiliary power unit charging and regenerative braking when the battery becomes fully charged.

Efficient Radio Frequency Inductive Discharges in Near Atmospheric Pressure Using Immittance Conversion Topology

NASA Astrophysics Data System (ADS)

Razzak, M. Abdur; Takamura, Shuichi; Uesugi, Yoshihiko; Ohno, Noriyasu

A radio frequency (rf) inductive discharge in atmospheric pressure range requires high voltage in the initial startup phase and high power during the steady state sustainment phase. It is, therefore, necessary to inject high rf power into the plasma ensuring the maximum use of the power source, especially where the rf power is limited. In order to inject the maximum possible rf power into the plasma with a moderate rf power source of few kilowatts range, we employ the immittance conversion topology by converting a constant voltage source into a constant current source to generate efficient rf discharge by inductively coupled plasma (ICP) technique at a gas pressure with up to one atmosphere in argon. A novel T-LCL immittance circuit is designed for constant-current high-power operation, which is practically very important in the high-frequency range, to provide high effective rf power to the plasma. The immittance conversion system combines the static induction transistor (SIT)-based radio frequency (rf) high-power inverter circuit and the immittance conversion elements including the rf induction coil. The basic properties of the immittance circuit are studied by numerical analysis and verified the results by experimental measurements with the inductive plasma as a load at a relatively high rf power of about 4 kW. The performances of the immittance circuit are also evaluated and compared with that of the conventional series resonance circuit in high-pressure induction plasma generation. The experimental results reveal that the immittance conversion circuit confirms injecting higher effective rf power into the plasma as much as three times than that of the series resonance circuit under the same operating conditions and same dc supply voltage to the inverter, thereby enhancing the plasma heating efficiency to generate efficient rf inductive discharges.

Photovoltaic Pixels for Neural Stimulation: Circuit Models and Performance.

PubMed

Boinagrov, David; Lei, Xin; Goetz, Georges; Kamins, Theodore I; Mathieson, Keith; Galambos, Ludwig; Harris, James S; Palanker, Daniel

2016-02-01

Photovoltaic conversion of pulsed light into pulsed electric current enables optically-activated neural stimulation with miniature wireless implants. In photovoltaic retinal prostheses, patterns of near-infrared light projected from video goggles onto subretinal arrays of photovoltaic pixels are converted into patterns of current to stimulate the inner retinal neurons. We describe a model of these devices and evaluate the performance of photovoltaic circuits, including the electrode-electrolyte interface. Characteristics of the electrodes measured in saline with various voltages, pulse durations, and polarities were modeled as voltage-dependent capacitances and Faradaic resistances. The resulting mathematical model of the circuit yielded dynamics of the electric current generated by the photovoltaic pixels illuminated by pulsed light. Voltages measured in saline with a pipette electrode above the pixel closely matched results of the model. Using the circuit model, our pixel design was optimized for maximum charge injection under various lighting conditions and for different stimulation thresholds. To speed discharge of the electrodes between the pulses of light, a shunt resistor was introduced and optimized for high frequency stimulation.

A self-powered piezoelectric energy harvesting interface circuit with efficiency-enhanced P-SSHI rectifier

NASA Astrophysics Data System (ADS)

Liu, Lianxi; Pang, Yanbo; Yuan, Wenzhi; Zhu, Zhangming; Yang, Yintang

2018-04-01

The key to self-powered technique is initiative to harvest energy from the surrounding environment. Harvesting energy from an ambient vibration source utilizing piezoelectrics emerged as a popular method. Efficient interface circuits become the main limitations of existing energy harvesting techniques. In this paper, an interface circuit for piezoelectric energy harvesting is presented. An active full bridge rectifier is adopted to improve the power efficiency by reducing the conduction loss on the rectifying path. A parallel synchronized switch harvesting on inductor (P-SSHI) technique is used to improve the power extraction capability from piezoelectric harvester, thereby trying to reach the theoretical maximum output power. An intermittent power management unit (IPMU) and an output capacitor-less low drop regulator (LDO) are also introduced. Active diodes (AD) instead of traditional passive ones are used to reduce the voltage loss over the rectifier, which results in a good power efficiency. The IPMU with hysteresis comparator ensures the interface circuit has a large transient output power by limiting the output voltage ranges from 2.2 to 2 V. The design is fabricated in a SMIC 0.18 μm CMOS technology. Simulation results show that the flipping efficiency of the P-SSHI circuit is over 80% with an off-chip inductor value of 820 μH. The output power the proposed rectifier can obtain is 44.4 μW, which is 6.7× improvement compared to the maximum output power of a traditional rectifier. Both the active diodes and the P-SSHI help to improve the output power of the proposed rectifier. LDO outputs a voltage of 1.8 V with the maximum 90% power efficiency. The proposed P-SSHI rectifier interface circuit can be self-powered without the need for additional power supply. Project supported by the National Natural Science Foundation of China (Nos. 61574103, U1709218) and the Key Research and Development Program of Shaanxi Province (No. 2017ZDXM-GY-006).

Closed Loop solar array-ion thruster system with power control circuitry

NASA Technical Reports Server (NTRS)

Gruber, R. P. (Inventor)

1979-01-01

A power control circuit connected between a solar array and an ion thruster receives voltage and current signals from the solar array. The control circuit multiplies the voltage and current signals together to produce a power signal which is differentiated with respect to time. The differentiator output is detected by a zero crossing detector and, after suitable shaping, the detector output is phase compared with a clock in a phase demodulator. An integrator receives no output from the phase demodulator when the operating point is at the maximum power but is driven toward the maximum power point for non-optimum operation. A ramp generator provides minor variations in the beam current reference signal produced by the integrator in order to obtain the first derivative of power.

A Power Conditioning Stage Based on Analog-Circuit MPPT Control and a Superbuck Converter for Thermoelectric Generators in Spacecraft Power Systems

NASA Astrophysics Data System (ADS)

Sun, Kai; Wu, Hongfei; Cai, Yan; Xing, Yan

2014-06-01

A thermoelectric generator (TEG) is a very important kind of power supply for spacecraft, especially for deep-space missions, due to its long lifetime and high reliability. To develop a practical TEG power supply for spacecraft, a power conditioning stage is indispensable, being employed to convert the varying output voltage of the TEG modules to a definite voltage for feeding batteries or loads. To enhance the system reliability, a power conditioning stage based on analog-circuit maximum-power-point tracking (MPPT) control and a superbuck converter is proposed in this paper. The input of this power conditioning stage is connected to the output of the TEG modules, and the output of this stage is connected to the battery and loads. The superbuck converter is employed as the main circuit, featuring low input current ripples and high conversion efficiency. Since for spacecraft power systems reliable operation is the key target for control circuits, a reset-set flip-flop-based analog circuit is used as the basic control circuit to implement MPPT, being much simpler than digital control circuits and offering higher reliability. Experiments have verified the feasibility and effectiveness of the proposed power conditioning stage. The results show the advantages of the proposed stage, such as maximum utilization of TEG power, small input ripples, and good stability.

A digital indicator for maximum windspeeds.

Treesearch

William B. Fowler

1969-01-01

A simple device for indicating maximum windspeed during a time interval is described. Use of a unijunction transistor, for voltage sensing, results in a stable comparison circuit and also reduces overall component requirements. Measurement is presented digitally in 1-mile-per-hour increments over the range of 0-51 m.p.h.

Surface and allied studies in silicon solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.

1984-01-01

Measuring small-signal admittance versus frequency and forward bias voltage together with a new transient measurement apparently provides the most reliable and flexible method available for determining back surface recombination velocity and low-injection lifetime of the quasineutral base region of silicon solar cells. The new transient measurement reported here is called short-circuit-current decay (SCCD). In this method, forward voltage equal to about the open-circuit or the maximum power voltage establishes excess holes and electrons in the junction transition region and in the quasineutral regions. The sudden application of a short circuit causes an exiting of the excess holes and electrons in the transition region within about ten picoseconds. From observing the slope and intercept of the subsequent current decay, the base lifetime and surface recombination velocity can be determined. The admittance measurement previously mentioned then enters to increase accuracy particularly for devices for which the diffusion length exceeds the base thickness.

The investigation of an electric arc in the long cylindrical channel of the powerful high-voltage AC plasma torch

NASA Astrophysics Data System (ADS)

Rutberg, Ph G.; Popov, S. D.; Surov, A. V.; Serba, E. O.; Nakonechny, Gh V.; Spodobin, V. A.; Pavlov, A. V.; Surov, A. V.

2012-12-01

The comparison of conductivity obtained in experiments with calculated values is made in this paper. Powerful stationary plasma torches with prolonged period of continuous work are popular for modern plasmachemical applications. The maximum electrode lifetime with the minimum erosion can be reached while working on rather low currents. Meanwhile it is required to provide voltage arc drop for the high power achievement. Electric field strength in the arc column of the high-voltage plasma torch, using air as a plasma-forming gas, does not exceed 15 V/cm. It is possible to obtain the high voltage drop in the long arc stabilized in the channel by the intensive gas flow under given conditions. Models of high voltage plasma torches with rod electrodes with power up to 50 kW have been developed and investigated. The plasma torch arcs are burning in cylindrical channels. Present investigations are directed at studying the possibility of developing long arc plasma torches with higher power. The advantage of AC power supplies usage is the possibility of the loss minimization due to the reactive power compensation. The theoretical maximum of voltage arc drop for power supplies with inductive current limitations is about 50 % of the no-load voltage for a single-phase circuit and about 30 % for the three-phase circuit. Burning of intensively blown arcs in the long cylindrical channel using the AC power supply with 10 kV no-load voltage is experimentally investigated in the work. Voltage drops close to the maximum possible had been reached in the examined arcs in single-phase and three-phase modes. Operating parameters for single-phase mode were: current -30 A, voltage drop -5 kV, air flow rate 35 g/s; for three-phase mode: current (40-85) A, voltage drop (2.5-3.2) kV, air flow rate (60-100) g/s. Arc length in the installations exceeded 2 m.

78 FR 48769 - Mercedes-Benz USA, LLC and Daimler AG, Receipt of Petition for Decision of Inconsequential...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-08-09

... subject vehicles contain parking lamps that exceed the maximum designated candlepower output level... for parking lamps). Due to a programming issue in the electronic control unit, the voltage in the parking lamp circuit is 12.8 volts which is higher than the design voltage specification of 7 volts in the...

Single Event Transients in Voltage Regulators for FPGA Power Supply Applications

NASA Technical Reports Server (NTRS)

Poivey, Christian; Sanders, Anthony; Kim, Hak; Phan, Anthony; Forney, Jim; LaBel, Kenneth A.; Karsh, Jeremy; Pursley, Scott; Kleyner, Igor; Katz, Richard

2006-01-01

As with other bipolar analog devices, voltage regulators are known to be sensitive to single event transients (SET). In typical applications, large output capacitors are used to provide noise immunity. Therefore, since SET amplitude and duration are generally small, they are often of secondary importance due to this capacitance filtering. In low voltage applications, however, even small SET are a concern. Over-voltages may cause destructive conditions. Under-voltages may cause functional interrupts and may also trigger electrical latchup conditions. In addition, internal protection circuits which are affected by load as well as internal thermal effects can also be triggered from heavy ions, causing dropouts or shutdown ranging from milliseconds to seconds. In the case of FPGA power supplies applications, SETS are critical. For example, in the case of Actel FPGA RTAX family, core power supply voltage is 1.5V. Manufacturer specifies an absolute maximum rating of 1.6V and recommended operating conditions between 1.425V and 1.575V. Therefore, according to the manufacturer, any transient of amplitude greater than 75 mV can disrupt normal circuit functions, and overvoltages greater than 100 mV may damage the FPGA. We tested five low dropout voltage regulators for SET sensitivity under a large range of circuit application conditions.

Photovoltaic array: Power conditioner interface characteristics

NASA Technical Reports Server (NTRS)

Gonzalez, C. C.; Hill, G. M.; Ross, R. G., Jr.

1982-01-01

The electrical output (power, current, and voltage) of flat plate solar arrays changes constantly, due primarily to changes in cell temperature and irradiance level. As a result, array loads such as dc-to-ac power conditioners must be capable of accommodating widely varying input levels while maintaining operation at or near the maximum power point of the array. The array operating characteristics and extreme output limits necessary for the systematic design of array load interfaces under a wide variety of climatic conditions are studied. A number of interface parameters are examined, including optimum operating voltage, voltage energy, maximum power and current limits, and maximum open circuit voltage. The effect of array degradation and I-V curve fill factor or the array power conditioner interface is also discussed. Results are presented as normalized ratios of power conditioner parameters to array parameters, making the results universally applicable to a wide variety of system sizes, sites, and operating modes.

Broadband linear high-voltage amplifier for radio frequency ion traps.

PubMed

Kuhlicke, Alexander; Palis, Klaus; Benson, Oliver

2014-11-01

We developed a linear high-voltage amplifier for small capacitive loads consisting of a high-voltage power supply and a transistor amplifier. With this cost-effective circuit including only standard parts sinusoidal signals with a few volts can be amplified to 1.7 kVpp over a usable frequency range at large-signal response spanning four orders of magnitude from 20 Hz to 100 kHz under a load of 10 pF. For smaller output voltages the maximum frequency shifts up to megahertz. We test different capacitive loads to probe the influence on the performance. The presented amplifier is sustained short-circuit proof on the output side, which is a significant advantage over other amplifier concepts. The amplifier can be used to drive radio frequency ion traps for single charged nano- and microparticles, which will be presented in brief.

A novel wireless power and data transmission AC to DC converter for an implantable device.

PubMed

Liu, Jhao-Yan; Tang, Kea-Tiong

2013-01-01

This article presents a novel AC to DC converter implemented by standard CMOS technology, applied for wireless power transmission. This circuit combines the functions of the rectifier and DC to DC converter, rather than using the rectifier to convert AC to DC and then supplying the required voltage with regulator as in the transitional method. This modification can reduce the power consumption and the area of the circuit. This circuit also transfers the loading condition back to the external circuit by the load shift keying(LSK), determining if the input power is not enough or excessive, which increases the efficiency of the total system. The AC to DC converter is fabricated with the TSMC 90nm CMOS process. The circuit area is 0.071mm(2). The circuit can produce a 1V DC voltage with maximum output current of 10mA from an AC input ranging from 1.5V to 2V, at 1MHz to 10MHz.

Maximum Power Game as a Physical and Social Extension of Classical Games

NASA Astrophysics Data System (ADS)

Kim, Pilwon

2017-03-01

We consider an electric circuit in which the players participate as resistors and adjust their resistance in pursuit of individual maximum power. The maximum power game(MPG) becomes very complicated in a circuit which is indecomposable into serial/parallel components, yielding a nontrivial power distribution at equilibrium. Depending on the circuit topology, MPG covers a wide range of phenomena: from a social dilemma in which the whole group loses to a well-coordinated situation in which the individual pursuit of power promotes the collective outcomes. We also investigate a situation where each player in the circuit has an intrinsic heat waste. Interestingly, it is this individual inefficiency which can keep them from the collective failure in power generation. When coping with an efficient opponent with small intrinsic resistance, a rather inefficient player gets more power than efficient one. A circuit with multiple voltage inputs forms the network-based maximum power game. One of our major interests is to figure out, in what kind of the networks the pursuit for private power leads to greater total power. It turns out that the circuits with the scale-free structure is one of the good candidates which generates as much power as close to the possible maximum total.

A grid-connected single-phase photovoltaic micro inverter

NASA Astrophysics Data System (ADS)

Wen, X. Y.; Lin, P. J.; Chen, Z. C.; Wu, L. J.; Cheng, S. Y.

2017-11-01

In this paper, the topology of a single-phase grid-connected photovoltaic (PV) micro-inverter is proposed. The PV micro-inverter consists of DC-DC stage with high voltage gain boost and DC-AC conversion stage. In the first stage, we apply the active clamp circuit and two voltage multipliers to achieve soft switching technology and high voltage gain. In addition, the flower pollination algorithm (FPA) is employed for the maximum power point tracking (MPPT) in the PV module in this stage. The second stage cascades a H-bridge inverter and LCL filter. To feed high quality sinusoidal power into the grid, the software phase lock, outer voltage loop and inner current loop control method are adopted as the control strategy. The performance of the proposed topology is tested by Matlab/Simulink. A PV module with maximum power 300W and maximum power point voltage 40V is applied as the input source. The simulation results indicate that the proposed topology and the control strategy are feasible.

Voltage and power relationships in lithium-containing solar cells.

NASA Technical Reports Server (NTRS)

Faith, T. J.

1972-01-01

Photovoltaic characteristics have been measured on a large number of crucible-grown lithium-containing solar cells irradiated by 1-MeV electrons to fluences ranging from 3 x 10 to the 13th power to 3 x 10 to the 15th power electrons per sq cm. These measurements have established empirical relationships between cell photovoltaic parameters and lithium donor density gradient. Short-circuit current and maximum power measured immediately after irradiation decrease logarithmically with lithium gradient. Open-circuit voltage increases logarithmically with lithium gradient both immediately after irradiation and after recovery, the degree of recovery being strongly gradient-dependent at high fluence. As a result, the maximum power and the power at 0.43 V after recovery from 3 x 10 to the 15th power electrons per sq cm increase with increasing lithium gradient.

Radio Frequency Transistors and Circuits Based on CVD MoS2.

PubMed

Sanne, Atresh; Ghosh, Rudresh; Rai, Amritesh; Yogeesh, Maruthi Nagavalli; Shin, Seung Heon; Sharma, Ankit; Jarvis, Karalee; Mathew, Leo; Rao, Rajesh; Akinwande, Deji; Banerjee, Sanjay

2015-08-12

We report on the gigahertz radio frequency (RF) performance of chemical vapor deposited (CVD) monolayer MoS2 field-effect transistors (FETs). Initial DC characterizations of fabricated MoS2 FETs yielded current densities exceeding 200 μA/μm and maximum transconductance of 38 μS/μm. A contact resistance corrected low-field mobility of 55 cm(2)/(V s) was achieved. Radio frequency FETs were fabricated in the ground-signal-ground (GSG) layout, and standard de-embedding techniques were applied. Operating at the peak transconductance, we obtain short-circuit current-gain intrinsic cutoff frequency, fT, of 6.7 GHz and maximum intrinsic oscillation frequency, fmax, of 5.3 GHz for a device with a gate length of 250 nm. The MoS2 device afforded an extrinsic voltage gain Av of 6 dB at 100 MHz with voltage amplification until 3 GHz. With the as-measured frequency performance of CVD MoS2, we provide the first demonstration of a common-source (CS) amplifier with voltage gain of 14 dB and an active frequency mixer with conversion gain of -15 dB. Our results of gigahertz frequency performance as well as analog circuit operation show that large area CVD MoS2 may be suitable for industrial-scale electronic applications.

Operational Characteristics of a High Voltage Dense Plasma Focus.

DTIC Science & Technology

1985-11-01

A high voltage dense plasma focus powered by a single-stage Marx bank was designed, built and operated. The maximum bank parameters are: voltage--120...kV, energy--20 kJ, short-circuit current--600kA. The bank impedance is about 200 millohms. The plasma focus center electrode diameter is 1.27 cm. The...about 50 milliohms. The context of this work is established with a review of previous plasma focus theoretical, experimental and computational work and

High performance of PbSe/PbS core/shell quantum dot heterojunction solar cells: short circuit current enhancement without the loss of open circuit voltage by shell thickness control.

PubMed

Choi, Hyekyoung; Song, Jung Hoon; Jang, Jihoon; Mai, Xuan Dung; Kim, Sungwoo; Jeong, Sohee

2015-11-07

We fabricated heterojunction solar cells with PbSe/PbS core shell quantum dots and studied the precisely controlled PbS shell thickness dependency in terms of optical properties, electronic structure, and solar cell performances. When the PbS shell thickness increases, the short circuit current density (JSC) increases from 6.4 to 11.8 mA cm(-2) and the fill factor (FF) enhances from 30 to 49% while the open circuit voltage (VOC) remains unchanged at 0.46 V even with the decreased effective band gap. We found that the Fermi level and the valence band maximum level remain unchanged in both the PbSe core and PbSe/PbS core/shell with a less than 1 nm thick PbS shell as probed via ultraviolet photoelectron spectroscopy (UPS). The PbS shell reduces their surface trap density as confirmed by relative quantum yield measurements. Consequently, PbS shell formation on the PbSe core mitigates the trade-off relationship between the open circuit voltage and the short circuit current density. Finally, under the optimized conditions, the PbSe core with a 0.9 nm thick shell yielded a power conversion efficiency of 6.5% under AM 1.5.

Power management and control for space systems

NASA Technical Reports Server (NTRS)

Finke, R. C.; Myers, I. T.; Terdan, F. F.; Stevens, N. J.

1978-01-01

Power management and control technology for the large, high-power spacecraft of the 1980's is discussed. Systems weight optimization that indicate a need for higher bus voltages are shown. Environmental interactions that are practical limits for the maximum potential on exposed surfaces are shown. A dual-voltage system is proposed that would provide the weight savings of a high-voltage distribution system and take into account the potential environmental interactions. The technology development of new components and circuits is also discussed.

30 CFR 75.800 - High-voltage circuits; circuit breakers.

Code of Federal Regulations, 2010 CFR

2010-07-01

... shall be equipped with devices to provide protection against under-voltage grounded phase, short circuit... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage circuits; circuit breakers. 75.800... § 75.800 High-voltage circuits; circuit breakers. [Statutory Provisions] High-voltage circuits entering...

AlGaAs 55Fe X-ray radioisotope microbattery

PubMed Central

Butera, S.; Whitaker, M. D. C.; Lioliou, G.; Barnett, A. M.

2016-01-01

This paper describes the performance of a fabricated prototype Al0.2Ga0.8As 55Fe radioisotope microbattery photovoltaic cells over the temperature range −20 °C to 50 °C. Two 400 μm diameter p+-i-n+ (3 μm i-layer) Al0.2Ga0.8As mesa photodiodes were used as conversion devices in a novel X-ray microbattery prototype. The changes of the key microbattery parameters were analysed in response to temperature: the open circuit voltage, the maximum output power and the internal conversion efficiency decreased when the temperature was increased. At −20 °C, an open circuit voltage and a maximum output power of 0.2 V and 0.04 pW, respectively, were measured per photodiode. The best internal conversion efficiency achieved for the fabricated prototype was only 0.95% at −20 °C. PMID:27922093

Temperature dependence of an AlInP 63Ni betavoltaic cell

NASA Astrophysics Data System (ADS)

Butera, S.; Lioliou, G.; Krysa, A. B.; Barnett, A. M.

2016-10-01

In this paper, the performance of an Al0.52In0.48P 63Ni radioisotope cell is reported over the temperature range of -20 °C to 140 °C. A 400 μm diameter p+-i-n+ (2 μm i-layer) Al0.52In0.48P mesa photodiode was used as a conversion device in a novel betavoltaic cell. Dark current measurements on the Al0.52In0.48P detector showed that the saturation current increased increasing the temperature, while the ideality factor decreased. The effects of the temperature on the key cell parameters were studied in detail showing that the open circuit voltage, the maximum output power, and the internal conversion efficiency decreased when the temperature was increased. At -20 °C, an open circuit voltage and a maximum output power of 0.52 V and 0.28 pW, respectively, were measured.

Absorption Voltages and Insulation Resistance in Ceramic Capacitors with Cracks

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2016-01-01

Time dependence of absorption voltages (Vabs) in different types of low-voltage X5R and X7R ceramic capacitors was monitored for a maximum duration of hundred hours after polarization. To evaluate the effect of mechanical defects on Vabs, cracks in the dielectric were introduced either mechanically or by thermal shock. The maximum absorption voltage, time to roll-off, and the rate of voltage decrease are shown to depend on the crack-related leakage currents and insulation resistance in the parts. A simple model that is based on the Dow equivalent circuit for capacitors with absorption has been developed to assess the insulation resistance of capacitors. Standard measurements of the insulation resistance, contrary to the measurements based on Vabs, are not sensitive to the presence of mechanical defects and fail to reveal capacitors with cracks. Index Terms: Ceramic capacitor, insulation resistance, dielectric absorption, cracking.

Absorption Voltages and Insulation Resistance in Ceramic Capacitors with Cracks

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2014-01-01

Time dependence of absorption voltages (V(sub abs)) in different types of low-voltage X5R and X7R ceramic capacitors was monitored for a maximum duration of hundred hours after polarization. To evaluate the effect of mechanical defects on V(sub abs)), cracks in the dielectric were introduced either mechanically or by thermal shock. The maximum absorption voltage, time to roll-off, and the rate of voltage decrease are shown to depend on the crack-related leakage currents and insulation resistance in the parts. A simple model that is based on the Dow equivalent circuit for capacitors with absorption has been developed to assess the insulation resistance of capacitors. Standard measurements of the insulation resistance, contrary to the measurements based on V(sub abs)), are not sensitive to the presence of mechanical defects and fail to reveal capacitors with cracks.

Electronic circuit for measuring series connected electrochemical cell voltages

DOEpatents

Ashtiani, Cyrus N.; Stuart, Thomas A.

2000-01-01

An electronic circuit for measuring voltage signals in an energy storage device is disclosed. The electronic circuit includes a plurality of energy storage cells forming the energy storage device. A voltage divider circuit is connected to at least one of the energy storage cells. A current regulating circuit is provided for regulating the current through the voltage divider circuit. A voltage measurement node is associated with the voltage divider circuit for producing a voltage signal which is proportional to the voltage across the energy storage cell.

30 CFR 77.800 - High-voltage circuits; circuit breakers.

Code of Federal Regulations, 2010 CFR

2010-07-01

... devices to provide protection against under voltage, grounded phase, short circuit and overcurrent. High... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage circuits; circuit breakers. 77.800... COAL MINES Surface High-Voltage Distribution § 77.800 High-voltage circuits; circuit breakers. High...

Temperature effects on gallium arsenide 63Ni betavoltaic cell.

PubMed

Butera, S; Lioliou, G; Barnett, A M

2017-07-01

A GaAs 63 Ni radioisotope betavoltaic cell is reported over the temperature range 70°C to -20°C. The temperature effects on the key cell parameters were investigated. The saturation current decreased with decreased temperature; whilst the open circuit voltage, the short circuit current, the maximum power and the internal conversion efficiency values decreased with increased temperature. A maximum output power and an internal conversion efficiency of 1.8pW (corresponding to 0.3μW/Ci) and 7% were observed at -20°C, respectively. Copyright © 2017 The Authors. Published by Elsevier Ltd.. All rights reserved.

Candle Soot-Driven Performance Enhancement in Pyroelectric Energy Conversion

NASA Astrophysics Data System (ADS)

Azad, Puneet; Singh, V. P.; Vaish, Rahul

2018-05-01

We observed substantial enhancement in pyroelectric output with the help of candle soot coating on the surface of lead zirconate titanate (PZT). Candle soot of varying thicknesses was coated by directly exposing pyroelectric material to the candle flame. The open-circuit pyroelectric voltage and closed-circuit pyroelectric current were recorded while applying infrared heating across the uncoated and candle soot-coated samples for different heating and cooling cycles. In comparison to the uncoated sample, the maximum open-circuit voltage improves seven times for the candle soot-coated sample and electric current increases by eight times across a resistance of 10Å. Moreover, the harvested energy is enhanced by 50 times for candle soot-coated sample. Results indicate that candle soot coating is an effective and economic method to improve infrared sensing performance of pyroelectric materials.

[Electricity generation using high concentration terephthalic acid solution by microbial fuel cell].

PubMed

Ye, Ye-Jie; Song, Tian-Shun; Xu, Yuan; Chen, Ying-Wen; Zhu, She-Min; Shen, Shu-Bao

2009-04-15

The high concentration terephthalic acid (TA) solution as the substrate of microbial fuel cell (MFC) was studied to generate electricity. The open circuit voltage was 0.54 V after inoculating for 210 h with anaerobic activated sludge, which proved that TA can be the substrate of microbial fuel cell to generate electricity. The influence of pH and substrate concentration on generating electricity was studied deeply. The voltage output of external resistance (R = 1,000 Omega) was the highest when pH was 8.0. It increased as the substrate concentration increasing and tended towards a maximum value. The maximum voltage output Umax was 0.5 V and Ks was 785.2 mg/L by Monod equation regression. When the substrate concentration (according to COD) was 4000 mg/L, the maximum power density was 96.3 mW/m2, coulomb efficiency was 2.66% and COD removal rate was 80.3%.

30 CFR 77.900 - Low- and medium-voltage circuits serving portable or mobile three-phase alternating current...

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Low- and medium-voltage circuits serving... Medium-Voltage Alternating Current Circuits § 77.900 Low- and medium-voltage circuits serving portable or mobile three-phase alternating current equipment; circuit breakers. Low- and medium-voltage circuits...

30 CFR 77.900 - Low- and medium-voltage circuits serving portable or mobile three-phase alternating current...

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low- and medium-voltage circuits serving... Medium-Voltage Alternating Current Circuits § 77.900 Low- and medium-voltage circuits serving portable or mobile three-phase alternating current equipment; circuit breakers. Low- and medium-voltage circuits...

30 CFR 77.900 - Low- and medium-voltage circuits serving portable or mobile three-phase alternating current...

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Low- and medium-voltage circuits serving... Medium-Voltage Alternating Current Circuits § 77.900 Low- and medium-voltage circuits serving portable or mobile three-phase alternating current equipment; circuit breakers. Low- and medium-voltage circuits...

Investigation of reliability attributes and accelerated stress factors on terrestrial solar cells

NASA Technical Reports Server (NTRS)

Prince, J. L.; Lathrop, J. W.

1979-01-01

The results of accelerated stress testing of four different types of silicon terrestrial solar cells are discussed. The accelerated stress tests used included bias-temperature tests, bias-temperature-humidity tests, thermal cycle and thermal shock tests, and power cycle tests. Characterization of the cells was performed before stress testing and at periodic down-times, using electrical measurement, visual inspection, and metal adherence pull tests. Electrical parameters measured included short-circuit current, open circuit voltage, and output power, voltage, and current at the maximum power point. Incorporated in the report are the distributions of the prestress electrical data for all cell types. Data were also obtained on cell series and shunt resistance.

Method of determining the open circuit voltage of a battery in a closed circuit

DOEpatents

Brown, William E.

1980-01-01

The open circuit voltage of a battery which is connected in a closed circuit is determined without breaking the circuit or causing voltage upsets therein. The closed circuit voltage across the battery and the current flowing through it are determined under normal load and then a fractional change is made in the load and the new current and voltage values determined. The open circuit voltage is then calculated, according to known principles, from the two sets of values.

Hybrid integrated biological-solid-state system powered with adenosine triphosphate.

PubMed

Roseman, Jared M; Lin, Jianxun; Ramakrishnan, Siddharth; Rosenstein, Jacob K; Shepard, Kenneth L

2015-12-07

There is enormous potential in combining the capabilities of the biological and the solid state to create hybrid engineered systems. While there have been recent efforts to harness power from naturally occurring potentials in living systems in plants and animals to power complementary metal-oxide-semiconductor integrated circuits, here we report the first successful effort to isolate the energetics of an electrogenic ion pump in an engineered in vitro environment to power such an artificial system. An integrated circuit is powered by adenosine triphosphate through the action of Na(+)/K(+) adenosine triphosphatases in an integrated in vitro lipid bilayer membrane. The ion pumps (active in the membrane at numbers exceeding 2 × 10(6) mm(-2)) are able to sustain a short-circuit current of 32.6 pA mm(-2) and an open-circuit voltage of 78 mV, providing for a maximum power transfer of 1.27 pW mm(-2) from a single bilayer. Two series-stacked bilayers provide a voltage sufficient to operate an integrated circuit with a conversion efficiency of chemical to electrical energy of 14.9%.

Over-voltage protection system and method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chi, Song; Dong, Dong; Lai, Rixin

An over-voltage protection system includes an electronic valve connected across two terminals of a circuit and an over-voltage detection circuit connected across one of the plurality of semiconductor devices for detecting an over-voltage across the circuit. The electronic valve includes a plurality of semiconductor devices connected in series. The over-voltage detection circuit includes a voltage divider circuit connected to a break-over diode in a way to provide a representative low voltage to the break-over diode and an optocoupler configured to receive a current from the break-over diode when the representative low voltage exceeds a threshold voltage of the break-over diodemore » indicating an over-voltage condition. The representative low voltage provided to the break-over diode represents a voltage across the one semiconductor device. A plurality of self-powered gate drive circuits are connected to the plurality of semiconductor devices, wherein the plurality of self-powered gate drive circuits receive over-voltage triggering pulses from the optocoupler during the over-voltage condition and switch on the plurality of semiconductor devices to bypass the circuit.« less

Photovoltaic Properties of Selenized CuGa/In Films with Varied Compositions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muzzillo, Christopher P.; Mansfield, Lorelle M.; Ramanathan, Kannan

2016-11-21

Thin CuGa/In films with varied compositions were deposited by co-evaporation and then selenized in situ with evaporated selenium. The selenized Cu(In, Ga)Se2 absorbers were used to fabricate 390 solar cells. Cu/(Ga+In) and Ga/(Ga+In) (Cu/III and Ga/III) were independently varied, and photovoltaic performance was optimal at Cu/III of 77-92% for all Ga/III compositions studied (Ga/III ~ 30, 50, and 70%). The best absorbers at each Ga/III composition were characterized with time-resolved photoluminescence, scanning electron microscopy, and secondary ion mass spectrometry, and devices were studied with temperature-dependent current density-voltage, light and electrical biased quantum efficiency, and capacitance-voltage. The best cells with Ga/IIImore » ~ 30, 50, and 70% had efficiencies of 14.5, 14.4, and 12.2% and maximum power temperature coefficients of -0.496, -0.452, and -0.413%/degrees C, respectively. This resulted in the Ga/III ~ 50% champion having the highest efficiency at temperatures greater than 40 degrees C, making it the optimal composition for practical purposes. This optimum is understood as a result of the absorber's band gap grading- where minimum band gap dominates short-circuit current density, maximum space charge region band gap dominates open-circuit voltage, and average absorber band gap dominates maximum power temperature coefficient.« less

Energy-level alignment and open-circuit voltage at graphene/polymer interfaces: theory and experiment

NASA Astrophysics Data System (ADS)

Noori, Keian; Konios, Dimitrios; Stylianakis, Minas M.; Kymakis, Emmanuel; Giustino, Feliciano

2016-03-01

Functionalized graphene promises to become a key component of novel solar cell architectures, owing to its versatile ability to act either as transparent conductor, electron acceptor, or buffer layer. In spite of this promise, the solar energy conversion efficiency of graphene-based devices falls short of the performance of competing solution-processable photovoltaic technologies. Here we address the question of the maximum achievable open-circuit voltage of all-organic graphene: polymer solar cells using a combined theoretical/experimental approach, going from the atomic scale level to the device level. Our calculations on very large atomistic models of the graphene/polymer interface indicate that the ideal open-circuit voltage approaches one volt, and that epoxide functional groups can have a dramatic effect on the photovoltage. Our predictions are confirmed by direct measurements on complete devices where we control the concentration of functional groups via chemical reduction. Our findings indicate that the selective removal of epoxide groups and the use of ultradisperse polymers are key to achieving graphene solar cells with improved energy conversion efficiency.

Comparison between two photovoltaic module models based on transistors

NASA Astrophysics Data System (ADS)

Saint-Eve, Frédéric; Sawicki, Jean-Paul; Petit, Pierre; Maufay, Fabrice; Aillerie, Michel

2018-05-01

The main objective of this paper is to verify the possibility to reduce to a simple electronic circuit with very few components the behavior simulation of an un-shaded photovoltaic (PV) module. Particularly, two models based on well-tried elementary structures, i.e., the Darlington structure in first model and the voltage regulation with programmable Zener diode in the second are analyzed. Specifications extracted from the behavior of a real I-V characteristic of a panel are considered and the principal electrical variables are deduced. The two models are expected to match with open circuit voltage, maximum power point (MPP) and short circuit current, without forgetting realistic current slopes on the both sides of MPP. The robustness is mentioned when irradiance varies and is considered as an additional fundamental property. For both models, two simulations are done to identify influence of some parameters. In the first model, a parameter allowing to adjust current slope on left side of MPP proves to be also important for the calculation of open circuit voltage. Besides this model does not authorize an entirely adjustment of I-V characteristic and MPP moves significantly away from real value when irradiance increases. On the contrary, the second model seems to have only qualities: open circuit voltage is easy to calculate, current slopes are realistic and there is perhaps a good robustness when irradiance variations are simulated by adjusting short circuit current of PV module. We have shown that these two simplified models are expected to make reliable and easier simulations of complex PV architecture integrating many different devices like PV modules or other renewable energy sources and storage capacities coupled in parallel association.

Rear surface effects in high efficiency silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wenham, S.R.; Robinson, S.J.; Dai, X.

1994-12-31

Rear surface effects in PERL solar cells can lead not only to degradation in the short circuit current and open circuit voltage, but also fill factor. Three mechanisms capable of changing the effective rear surface recombination velocity with injection level are identified, two associated with oxidized p-type surfaces, and the third with two dimensional effects associated with a rear floating junction. Each of these will degrade the fill factor if the range of junction biases corresponding to the rear surface transition, coincides with the maximum power point. Despite the identified non idealities, PERL cells with rear floating junctions (PERF cells)more » have achieved record open circuit voltages for silicon solar cells, while simultaneously achieving fill factor improvements relative to standard PERL solar cells. Without optimization, a record efficiency of 22% has been demonstrated for a cell with a rear floating junction. The results of both theoretical and experimental studies are provided.« less

Investigation of a temperature tolerant InGaP (GaInP) converter layer for a 63Ni betavoltaic cell

NASA Astrophysics Data System (ADS)

Butera, S.; Whitaker, M. D. C.; Krysa, A. B.; Barnett, A. M.

2017-08-01

A prototype InGaP p+-i-n+ mesa photodiode was studied for its potential as the energy conversion device in a 63Ni betavoltaic cell; its electrical performance was analysed across the temperature range  -20 °C to 100 °C. The results show that the InGaP detector when illuminated with a laboratory 63Ni radioisotope beta particle source had a maximum output power of 0.92 pW at  -20 °C, this value decreased at higher temperatures. A decrease in the open circuit voltage and in the cell internal conversion efficiency were also observed when the temperature was increased: at  -20 °C, the open circuit voltage and the cell internal conversion efficiency had values of 0.69 V and 4%, respectively. A short circuit current of 4.5 pA was measured at  -20 °C.

A fully on-chip fast-transient NMOS low dropout voltage regulator with quasi floating gate pass element

NASA Astrophysics Data System (ADS)

Wang, Han; Gou, Chao; Luo, Kai

2017-04-01

This paper presents a fully on-chip NMOS low-dropout regulator (LDO) for portable applications with quasi floating gate pass element and fast transient response. The quasi floating gate structure makes the gate of the NMOS transistor only periodically charged or refreshed by the charge pump, which allows the charge pump to be a small economical circuit with small silicon area. In addition, a variable reference circuit is introduced enlarging the dynamic range of error amplifier during load transient. The proposed LDO has been implemented in a 0.35 μm BCD process. From experimental results, the regulator can operate with a minimum dropout voltage of 250 mV at a maximum 1 A load and {I}{{Q}} of 395 μA. Under full-range load current step, the voltage undershoot and overshoot of the proposed LDO are reduced to 50 and 26 mV, respectively.

An IBM PC-based math model for space station solar array simulation

NASA Technical Reports Server (NTRS)

Emanuel, E. M.

1986-01-01

This report discusses and documents the design, development, and verification of a microcomputer-based solar cell math model for simulating the Space Station's solar array Initial Operational Capability (IOC) reference configuration. The array model is developed utilizing a linear solar cell dc math model requiring only five input parameters: short circuit current, open circuit voltage, maximum power voltage, maximum power current, and orbit inclination. The accuracy of this model is investigated using actual solar array on orbit electrical data derived from the Solar Array Flight Experiment/Dynamic Augmentation Experiment (SAFE/DAE), conducted during the STS-41D mission. This simulator provides real-time simulated performance data during the steady state portion of the Space Station orbit (i.e., array fully exposed to sunlight). Eclipse to sunlight transients and shadowing effects are not included in the analysis, but are discussed briefly. Integrating the Solar Array Simulator (SAS) into the Power Management and Distribution (PMAD) subsystem is also discussed.

Correlation between the Open-Circuit Voltage and Charge Transfer State Energy in Organic Photovoltaic Cells.

PubMed

Zou, Yunlong; Holmes, Russell J

2015-08-26

In order to further improve the performance of organic photovoltaic cells (OPVs), it is essential to better understand the factors that limit the open-circuit voltage (VOC). Previous work has sought to correlate the value of VOC in donor-acceptor (D-A) OPVs to the interface energy level offset (EDA). In this work, measurements of electroluminescence are used to extract the charge transfer (CT) state energy for multiple small molecule D-A pairings. The CT state as measured from electroluminescence is found to show better correlation to the maximum VOC than EDA. The difference between EDA and the CT state energy is attributed to the Coulombic binding energy of the CT state. This correlation is demonstrated explicitly by inserting an insulating spacer layer between the donor and acceptor materials, reducing the binding energy of the CT state and increasing the measured VOC. These results demonstrate a direct correlation between maximum VOC and CT state energy.

An omnipotent Li-ion battery charger with multimode control and polarity reversible techniques

NASA Astrophysics Data System (ADS)

Chen, Jiann-Jong; Ku, Yi-Tsen; Yang, Hong-Yi; Hwang, Yuh-Shyan; Yu, Cheng-Chieh

2016-07-01

The omnipotent Li-ion battery charger with multimode control and polarity reversible techniques is presented in this article. The proposed chip is fabricated with TSMC 0.35μm 2P4M complementary metal-oxide- semiconductor processes, and the chip area including pads is 1.5 × 1.5 mm2. The structure of the omnipotent charger combines three charging modes and polarity reversible techniques, which adapt to any Li-ion batteries. The three reversible Li-ion battery charging modes, including trickle-current charging, large-current charging and constant-voltage charging, can charge in matching polarities or opposite polarities. The proposed circuit has a maximum charging current of 300 mA and the input voltage of the proposed circuit is set to 4.5 V. The maximum efficiency of the proposed charger is about 91% and its average efficiency is 74.8%. The omnipotent charger can precisely provide the charging current to the battery.

Microwatt power consumption maximum power point tracking circuit using an analogue differentiator for piezoelectric energy harvesting

NASA Astrophysics Data System (ADS)

Chew, Z. J.; Zhu, M.

2015-12-01

A maximum power point tracking (MPPT) scheme by tracking the open-circuit voltage from a piezoelectric energy harvester using a differentiator is presented in this paper. The MPPT controller is implemented by using a low-power analogue differentiator and comparators without the need of a sensing circuitry and a power hungry controller. This proposed MPPT circuit is used to control a buck converter which serves as a power management module in conjunction with a full-wave bridge diode rectifier. Performance of this MPPT control scheme is verified by using the prototyped circuit to track the maximum power point of a macro-fiber composite (MFC) as the piezoelectric energy harvester. The MFC was bonded on a composite material and the whole specimen was subjected to various strain levels at frequency from 10 to 100 Hz. Experimental results showed that the implemented full analogue MPPT controller has a tracking efficiency between 81% and 98.66% independent of the load, and consumes an average power of 3.187 μW at 3 V during operation.

Fast-responding short circuit protection system with self-reset for use in circuit supplied by DC power

NASA Technical Reports Server (NTRS)

Burns, Bradley M. (Inventor); Blalock, Norman N. (Inventor)

2011-01-01

A short circuit protection system includes an inductor, a switch, a voltage sensing circuit, and a controller. The switch and inductor are electrically coupled to be in series with one another. A voltage sensing circuit is coupled across the switch and the inductor. A controller, coupled to the voltage sensing circuit and the switch, opens the switch when a voltage at the output terminal of the inductor transitions from above a threshold voltage to below the threshold voltage. The controller closes the switch when the voltage at the output terminal of the inductor transitions from below the threshold voltage to above the threshold voltage.

30 CFR 75.900 - Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit...

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Low- and medium-voltage circuits serving three... STANDARDS-UNDERGROUND COAL MINES Underground Low- and Medium-Voltage Alternating Current Circuits § 75.900 Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit breakers...

30 CFR 75.900 - Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit...

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Low- and medium-voltage circuits serving three... STANDARDS-UNDERGROUND COAL MINES Underground Low- and Medium-Voltage Alternating Current Circuits § 75.900 Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit breakers...

30 CFR 75.900 - Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit...

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low- and medium-voltage circuits serving three... STANDARDS-UNDERGROUND COAL MINES Underground Low- and Medium-Voltage Alternating Current Circuits § 75.900 Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit breakers...

Analysis of a modular generator for high-voltage, high-frequency pulsed applications, using low voltage semiconductors (< 1 kV) and series connected step-up (1:10) transformers.

PubMed

Redondo, L M; Fernando Silva, J; Margato, E

2007-03-01

This article discusses the operation of a modular generator topology, which has been developed for high-frequency (kHz), high-voltage (kV) pulsed applications. The proposed generator uses individual modules, each one consisting of a pulse circuit based on a modified forward converter, which takes advantage of the required low duty cycle to operate with a low voltage clamp reset circuit for the step-up transformer. This reduces the maximum voltage on the semiconductor devices of both primary and secondary transformer sides. The secondary winding of each step-up transformer is series connected, delivering a fraction of the total voltage. Each individual pulsed module is supplied via an isolation transformer. The assembled modular laboratorial prototype, with three 5 kV modules, 800 V semiconductor switches, and 1:10 step-up transformers, has 80% efficiency, and is capable of delivering, into resistive loads, -15 kV1 A pulses with 5 micros width, 10 kHz repetition rate, with less than 1 micros pulse rise time. Experimental results for resistive loads are presented and discussed.

A low noise and high precision linear power supply with thermal foldback protection.

PubMed

Carniti, P; Cassina, L; Gotti, C; Maino, M; Pessina, G

2016-05-01

A low noise and high precision linear power supply was designed for use in rare event search experiments with macrobolometers. The circuit accepts at the input a "noisy" dual supply voltage up to ±15 V and gives at the output precise, low noise, and stable voltages that can be set between ±3.75 V and ±12.5 V in eight 1.25 V steps. Particular care in circuit design, component selection, and proper filtering results in a noise spectral density of 50nV/Hz at 1 Hz and 20nV/Hz white when the output is set to ±5 V. This corresponds to 125 nV RMS (0.8 μV peak to peak) between 0.1 Hz and 10 Hz, and 240 nV RMS (1.6 μV peak to peak) between 0.1 Hz and 100 Hz. The power supply rejection ratio (PSRR) of the circuit is 100 dB at low frequency, and larger than 40 dB up to high frequency, thanks to a proper compensation design. Calibration allows to reach a precision in the absolute value of the output voltage of ±70 ppm, or ±350 μV at ±5 V, and to reduce thermal drifts below ±1 ppm/(∘)C in the expected operating range. The maximum peak output current is about 6 A from each output. An original foldback protection scheme was developed that dynamically limits the maximum output current to keep the temperature of the output transistors within their safe operating range. An add-on card based on an ARM Cortex-M3 microcontroller is devoted to the monitoring and control of all circuit functionalities and provides remote communication via CAN bus.

An optimal design of magnetostrictive material (MsM) based energy harvester

NASA Astrophysics Data System (ADS)

Hu, Jingzhen; Yuan, Fuh-Gwo; Xu, Fujun; Huang, Alex Q.

2010-04-01

In this study, an optimal vibration-based energy harvesting system using magnetostrictive material (MsM) has been designed to power the Wireless Intelligent Sensor Platform (WISP), developed at North Carolina State University. A linear MsM energy harvesting device has been modeled and optimized to maximize the power output. The effects of number of MsM layers and glue layers, and load matching on the output power of the MsM energy harvester have been analyzed. From the measurement, the open circuit voltage can reach 1.5 V when the MsM cantilever beam operates at the 2nd natural frequency 324 Hz. The AC output power is 0.97 mW, giving power density 279 μW/cm3. Since the MsM device has low open circuit output voltage characteristics, a full-wave quadrupler has been designed to boost the rectified output voltage. To deliver the maximum output power to the load, a complex conjugate impedance matching between the load and the MsM device has been implemented using a discontinuous conduction mode (DCM) buck-boost converter. The maximum output power after the voltage quadrupler is now 705 μW and power density reduces to 202.4 μW/cm3, which is comparable to the piezoelectric energy harvesters given in the literature. The output power delivered to a lithium rechargeable battery is around 630 μW, independent of the load resistance.

A simple sub-nanosecond ultraviolet light pulse generator with high repetition rate and peak power.

PubMed

Binh, P H; Trong, V D; Renucci, P; Marie, X

2013-08-01

We present a simple ultraviolet sub-nanosecond pulse generator using commercial ultraviolet light-emitting diodes with peak emission wavelengths of 290 nm, 318 nm, 338 nm, and 405 nm. The generator is based on step recovery diode, short-circuited transmission line, and current-shaping circuit. The narrowest pulses achieved have 630 ps full width at half maximum at repetition rate of 80 MHz. Optical pulse power in the range of several hundreds of microwatts depends on the applied bias voltage. The bias voltage dependences of the output optical pulse width and peak power are analysed and discussed. Compared to commercial UV sub-nanosecond generators, the proposed generator can produce much higher pulse repetition rate and peak power.

[Photovoltaic character of organic EL devices MEH-PPV/Alq3].

PubMed

Lin, Peng; Liang, Chun-Jun; Deng, Zhen-Bo; Xiong, De-Ping; Wang, Li; Zhang, Zhi-Feng; Zhang, Xi-Qing

2005-01-01

An organic photovoltaic(PV) cell, ITO/MEH-PPV/Alq3/LiF/Al, was fabricated. The MEH-PPV and Alq3 are the electron-acceptor and donor in the cell, respectively. The respond region matchs the adsorption of Alq3 film. Under UV light with 0.5 mW x cm(-2), the cell shows a short-circuit current of 2.4 microA x cm(-2), open-circuit voltage of 2.6 V, a fill factor of 0.71, and a power conversion efficiency of 0.9%. It was found that the PV cell indicates electroluminescence (EL) performance and could emit orange light at DC voltage. The maximum luminance is about 1 000 cd x cm(-2) at 15 V.

A 7.8 kV nanosecond pulse generator with a 500 Hz repetition rate

NASA Astrophysics Data System (ADS)

Lin, M.; Liao, H.; Liu, M.; Zhu, G.; Yang, Z.; Shi, P.; Lu, Q.; Sun, X.

2018-04-01

Pseudospark switches are widely used in pulsed power applications. In this paper, we present the design and performance of a 500 Hz repetition rate high-voltage pulse generator to drive TDI-series pseudospark switches. A high-voltage pulse is produced by discharging an 8 μF capacitor through a primary windings of a setup isolation transformer using a single metal-oxide-semiconductor field-effect transistor (MOSFET) as a control switch. In addition, a self-break spark gap is used to steepen the pulse front. The pulse generator can deliver a high-voltage pulse with a peak trigger voltage of 7.8 kV, a peak trigger current of 63 A, a full width at half maximum (FWHM) of ~30 ns, and a rise time of 5 ns to the trigger pin of the pseudospark switch. During burst mode operation, the generator achieved up to a 500 Hz repetition rate. Meanwhile, we also provide an AC heater power circuit for heating a H2 reservoir. This pulse generator can be used in circuits with TDI-series pseudospark switches with either a grounded cathode or with a cathode electrically floating operation. The details of the circuits and their implementation are described in the paper.

Quick-disconnect harness system for helmet-mounted displays

NASA Astrophysics Data System (ADS)

Bapu, P. T.; Aulds, M. J.; Fuchs, Steven P.; McCormick, David M.

1992-10-01

We have designed a pilot's harness-mounted, high voltage quick-disconnect connectors with 62 pins, to transmit voltages up to 13.5 kV and video signals with 70 MHz bandwidth, for a binocular helmet-mounted display system. It connects and disconnects with power off, and disconnects 'hot' without pilot intervention and without producing external sparks or exposing hot embers to the explosive cockpit environment. We have implemented a procedure in which the high voltage pins disconnect inside a hermetically-sealed unit before the physical separation of the connector. The 'hot' separation triggers a crowbar circuit in the high voltage power supplies for additional protection. Conductor locations and shields are designed to reduce capacitance in the circuit and avoid crosstalk among adjacent circuits. The quick- disconnect connector and wiring harness are human-engineered to ensure pilot safety and mobility. The connector backshell is equipped with two hybrid video amplifiers to improve the clarity of the video signals. Shielded wires and coaxial cables are molded as a multi-layered ribbon for maximum flexibility between the pilot's harness and helmet. Stiff cabling is provided between the quick-disconnect connector and the aircraft console to control behavior during seat ejection. The components of the system have been successfully tested for safety, performance, ergonomic considerations, and reliability.

Vertically integrated, three-dimensional nanowire complementary metal-oxide-semiconductor circuits.

PubMed

Nam, SungWoo; Jiang, Xiaocheng; Xiong, Qihua; Ham, Donhee; Lieber, Charles M

2009-12-15

Three-dimensional (3D), multi-transistor-layer, integrated circuits represent an important technological pursuit promising advantages in integration density, operation speed, and power consumption compared with 2D circuits. We report fully functional, 3D integrated complementary metal-oxide-semiconductor (CMOS) circuits based on separate interconnected layers of high-mobility n-type indium arsenide (n-InAs) and p-type germanium/silicon core/shell (p-Ge/Si) nanowire (NW) field-effect transistors (FETs). The DC voltage output (V(out)) versus input (V(in)) response of vertically interconnected CMOS inverters showed sharp switching at close to the ideal value of one-half the supply voltage and, moreover, exhibited substantial DC gain of approximately 45. The gain and the rail-to-rail output switching are consistent with the large noise margin and minimal static power consumption of CMOS. Vertically interconnected, three-stage CMOS ring oscillators were also fabricated by using layer-1 InAs NW n-FETs and layer-2 Ge/Si NW p-FETs. Significantly, measurements of these circuits demonstrated stable, self-sustained oscillations with a maximum frequency of 108 MHz, which represents the highest-frequency integrated circuit based on chemically synthesized nanoscale materials. These results highlight the flexibility of bottom-up assembly of distinct nanoscale materials and suggest substantial promise for 3D integrated circuits.

30 CFR 75.907 - Design of trailing cables for medium-voltage circuits.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Design of trailing cables for medium-voltage... Medium-Voltage Alternating Current Circuits § 75.907 Design of trailing cables for medium-voltage circuits. [Statutory Provisions] Trailing cables for medium-voltage circuits shall include grounding...

30 CFR 75.907 - Design of trailing cables for medium-voltage circuits.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Design of trailing cables for medium-voltage... Medium-Voltage Alternating Current Circuits § 75.907 Design of trailing cables for medium-voltage circuits. [Statutory Provisions] Trailing cables for medium-voltage circuits shall include grounding...

30 CFR 75.907 - Design of trailing cables for medium-voltage circuits.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Design of trailing cables for medium-voltage... Medium-Voltage Alternating Current Circuits § 75.907 Design of trailing cables for medium-voltage circuits. [Statutory Provisions] Trailing cables for medium-voltage circuits shall include grounding...

30 CFR 75.907 - Design of trailing cables for medium-voltage circuits.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Design of trailing cables for medium-voltage... Medium-Voltage Alternating Current Circuits § 75.907 Design of trailing cables for medium-voltage circuits. [Statutory Provisions] Trailing cables for medium-voltage circuits shall include grounding...

30 CFR 75.907 - Design of trailing cables for medium-voltage circuits.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Design of trailing cables for medium-voltage... Medium-Voltage Alternating Current Circuits § 75.907 Design of trailing cables for medium-voltage circuits. [Statutory Provisions] Trailing cables for medium-voltage circuits shall include grounding...

30 CFR 75.802 - Protection of high-voltage circuits extending underground.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Protection of high-voltage circuits extending...-Voltage Distribution § 75.802 Protection of high-voltage circuits extending underground. (a) Except as provided in paragraph (b) of this section, high-voltage circuits extending underground and supplying...

30 CFR 75.802 - Protection of high-voltage circuits extending underground.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Protection of high-voltage circuits extending...-Voltage Distribution § 75.802 Protection of high-voltage circuits extending underground. (a) Except as provided in paragraph (b) of this section, high-voltage circuits extending underground and supplying...

30 CFR 75.802 - Protection of high-voltage circuits extending underground.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Protection of high-voltage circuits extending...-Voltage Distribution § 75.802 Protection of high-voltage circuits extending underground. (a) Except as provided in paragraph (b) of this section, high-voltage circuits extending underground and supplying...

High voltage DC power supply

DOEpatents

Droege, T.F.

1989-12-19

A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively. 7 figs.

High voltage DC power supply

DOEpatents

Droege, Thomas F.

1989-01-01

A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively.

Automated qualification and analysis of protective spark gaps for DC accelerators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Banerjee, Srutarshi; Rajan, Rehim N.; Dewangan, S.

2014-07-01

Protective spark gaps are used in the high voltage multiplier column of a 3 MeV DC Accelerator to prevent excessive voltage build-ups. Precise gap of 5 mm is maintained between the electrodes in these spark gaps for obtaining 120 kV± 5 kV in 6 kg/cm{sup 2} SF{sub 6} environment which is the dielectric medium. There are 74 such spark gaps used in the multiplier. Each spark gap has to be qualified for electrical performance before fitting in the accelerator to ensure reliable operation. As the breakdown voltage stabilizes after a large number of sparks between the electrodes, the qualification processmore » becomes time consuming and cumbersome. For qualifying large number of spark gaps an automatic breakdown analysis setup has been developed. This setup operates in air, a dielectric medium. The setup consists of a flyback topology based high voltage power supply with maximum rating of 25 kV. This setup works in conjunction with spark detection and automated shutdown circuit. The breakdown voltage is sensed using a peak detector circuit. The voltage breakdown data is recorded and statistical distribution of the breakdown voltage has been analyzed. This paper describes details of the diagnostics and the spark gap qualification process based on the experimental data. (author)« less

Fingerprinted circuits and methods of making and identifying the same

NASA Technical Reports Server (NTRS)

Ferguson, Michael Ian (Inventor)

2011-01-01

A circuit having a fingerprint for identification of a particular instantiation of the circuit is disclosed. The circuit may include a plurality of digital circuits or gates. Each of the digital circuits or gates is responsive to a configuration voltage applied to its analog input for controlling whether or not the digital circuit or gate performs its intended digital function and each of the digital circuits or gates transitioning between its functional state and its at least one other state when the configuration voltage equals a boundary voltage. The boundary voltage varies between different instantiations of the circuit for a majority of the digital circuits or gates and these differing boundary voltages serving to identify (or fingerprint) different instantiations of the same circuit.

Fingerprinted circuits and methods of making and identifying the same

NASA Technical Reports Server (NTRS)

Ferguson, Michael Ian (Inventor)

2012-01-01

A circuit having a fingerprint for identification of a particular instantiation of the circuit is disclosed. The circuit may include a plurality of digital circuits or gates. Each of the digital circuits or gates is responsive to a configuration voltage applied to its analog input for controlling whether or not the digital circuit or gate performs its intended digital function and each of the digital circuits or gates transitioning between its functional state and its at least one other state when the configuration voltage equals a boundary voltage. The boundary voltage varies between different instantiations of the circuit for a majority of the digital circuits or gates and these differing boundary voltages serving to identify (or fingerprint) different instantiations of the same circuit.

Double buffer circuit for the characterization of piezoelectric nanogenerators based on ZnO nanowires

NASA Astrophysics Data System (ADS)

Nadaud, Kevin; Morini, François; Dahiya, Abhishek S.; Justeau, Camille; Boubenia, Sarah; Rajeev, Kiron P.; Alquier, Daniel; Poulin-Vittrant, Guylaine

2018-02-01

The accurate and precise measurements of voltage and current output generated by a nanogenerator (NG) are crucial to design the rectifying/harvesting circuit and to evaluate correctly the amount of energy provided by a NG. High internal impedance of the NGs (several MΩ) is the main limiting factor for designing circuits to measure the open circuit voltage. In this paper, we present the influence of the characterization circuit used to measure the generated voltage of piezoelectric NGs. The proposed circuit consists of a differential amplifier which permits us to measure the voltage provided by the NG without applying any parasitic bias to it. The proposed circuit is compared to a commercial electrometer and a homemade buffer circuit based on a voltage follower circuit to show its interest. For the proposed double buffer circuit, no asymmetric behavior has been noticed contrary to the measurements made using a simple buffer circuit and a Keithley electrometer. The proposed double buffer circuit is thus suitable to measure the NG voltage in a transparent way, as an ideal voltage probe should do.

30 CFR 77.901 - Protection of low- and medium-voltage three-phase circuits.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Protection of low- and medium-voltage three... WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901 Protection of low- and medium-voltage three-phase circuits. (a) Low- and medium-voltage circuits supplying...

30 CFR 77.901 - Protection of low- and medium-voltage three-phase circuits.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Protection of low- and medium-voltage three... WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901 Protection of low- and medium-voltage three-phase circuits. (a) Low- and medium-voltage circuits supplying...

30 CFR 77.901 - Protection of low- and medium-voltage three-phase circuits.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Protection of low- and medium-voltage three... WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901 Protection of low- and medium-voltage three-phase circuits. (a) Low- and medium-voltage circuits supplying...

30 CFR 77.901 - Protection of low- and medium-voltage three-phase circuits.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Protection of low- and medium-voltage three... WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901 Protection of low- and medium-voltage three-phase circuits. (a) Low- and medium-voltage circuits supplying...

30 CFR 77.901 - Protection of low- and medium-voltage three-phase circuits.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Protection of low- and medium-voltage three... WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901 Protection of low- and medium-voltage three-phase circuits. (a) Low- and medium-voltage circuits supplying...

Low power, scalable multichannel high voltage controller

DOEpatents

Stamps, James Frederick [Livermore, CA; Crocker, Robert Ward [Fremont, CA; Yee, Daniel Dadwa [Dublin, CA; Dils, David Wright [Fort Worth, TX

2006-03-14

A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

Low power, scalable multichannel high voltage controller

DOEpatents

Stamps, James Frederick [Livermore, CA; Crocker, Robert Ward [Fremont, CA; Yee, Daniel Dadwa [Dublin, CA; Dils, David Wright [Fort Worth, TX

2008-03-25

A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

NREL Collaboration Breaks 1-Volt Barrier in CdTe Solar Technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

2016-05-01

NREL scientists have worked with Washington State University and the University of Tennessee to improve the maximum voltage available from CdTe solar cells. Changes in dopants, stoichiometry, interface design, and defect chemistry improved the CdTe conductivity and carrier lifetime by orders of magnitude, thus enabling CdTe solar cells with open-circuit voltages exceeding 1 volt for the first time. Values of current density and fill factor for CdTe solar cells are already at high levels, but sub-par voltages has been a barrier to improved efficiencies. With voltages pushed beyond 1 volt, CdTe cells have a path to produce electricity at costsmore » less than fossil fuels.« less

Circuit engineering principles for construction of bipolar large-scale integrated circuit storage devices and very large-scale main memory

NASA Astrophysics Data System (ADS)

Neklyudov, A. A.; Savenkov, V. N.; Sergeyez, A. G.

1984-06-01

Memories are improved by increasing speed or the memory volume on a single chip. The most effective means for increasing speeds in bipolar memories are current control circuits with the lowest extraction times for a specific power consumption (1/4 pJ/bit). The control current circuitry involves multistage current switches and circuits accelerating transient processes in storage elements and links. Circuit principles for the design of bipolar memories with maximum speeds for an assigned minimum of circuit topology are analyzed. Two main classes of storage with current control are considered: the ECL type and super-integrated injection type storage with data capacities of N = 1/4 and N 4/16, respectively. The circuits reduce logic voltage differentials and the volumes of lexical and discharge buses and control circuit buses. The limiting speed is determined by the antiinterference requirements of the memory in storage and extraction modes.

A High-Voltage SOI CMOS Exciter Chip for a Programmable Fluidic Processor System.

PubMed

Current, K W; Yuk, K; McConaghy, C; Gascoyne, P R C; Schwartz, J A; Vykoukal, J V; Andrews, C

2007-06-01

A high-voltage (HV) integrated circuit has been demonstrated to transport fluidic droplet samples on programmable paths across the array of driving electrodes on its hydrophobically coated surface. This exciter chip is the engine for dielectrophoresis (DEP)-based micro-fluidic lab-on-a-chip systems, creating field excitations that inject and move fluidic droplets onto and about the manipulation surface. The architecture of this chip is expandable to arrays of N X N identical HV electrode driver circuits and electrodes. The exciter chip is programmable in several senses. The routes of multiple droplets may be set arbitrarily within the bounds of the electrode array. The electrode excitation waveform voltage amplitude, phase, and frequency may be adjusted based on the system configuration and the signal required to manipulate a particular fluid droplet composition. The voltage amplitude of the electrode excitation waveform can be set from the minimum logic level up to the maximum limit of the breakdown voltage of the fabrication technology. The frequency of the electrode excitation waveform can also be set independently of its voltage, up to a maximum depending upon the type of droplets that must be driven. The exciter chip can be coated and its oxide surface used as the droplet manipulation surface or it can be used with a top-mounted, enclosed fluidic chamber consisting of a variety of materials. The HV capability of the exciter chip allows the generated DEP forces to penetrate into the enclosed chamber region and an adjustable voltage amplitude can accommodate a variety of chamber floor thicknesses. This demonstration exciter chip has a 32 x 32 array of nominally 100 V electrode drivers that are individually programmable at each time point in the procedure to either of two phases: 0deg and 180deg with respect to the reference clock. For this demonstration chip, while operating the electrodes with a 100-V peak-to-peak periodic waveform, the maximum HV electrode waveform frequency is about 200 Hz; and standard 5-V CMOS logic data communication rate is variable up to 250 kHz. This HV demonstration chip is fabricated in a 130-V 1.0-mum SOI CMOS fabrication technology, dissipates a maximum of 1.87 W, and is about 10.4 mm x 8.2 mm.

30 CFR 75.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Fail safe ground check circuits on high-voltage... High-Voltage Distribution § 75.803 Fail safe ground check circuits on high-voltage resistance grounded... shall include a fail safe ground check circuit to monitor continuously the grounding circuit to assure...

30 CFR 75.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Fail safe ground check circuits on high-voltage... High-Voltage Distribution § 75.803 Fail safe ground check circuits on high-voltage resistance grounded... shall include a fail safe ground check circuit to monitor continuously the grounding circuit to assure...

30 CFR 75.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Fail safe ground check circuits on high-voltage... High-Voltage Distribution § 75.803 Fail safe ground check circuits on high-voltage resistance grounded... shall include a fail safe ground check circuit to monitor continuously the grounding circuit to assure...

30 CFR 75.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Fail safe ground check circuits on high-voltage... High-Voltage Distribution § 75.803 Fail safe ground check circuits on high-voltage resistance grounded... shall include a fail safe ground check circuit to monitor continuously the grounding circuit to assure...

Effects of a parallel resistor on electrical characteristics of a piezoelectric transformer in open-circuit transient state.

PubMed

Chang, Kuo-Tsai

2007-01-01

This paper investigates electrical transient characteristics of a Rosen-type piezoelectric transformer (PT), including maximum voltages, time constants, energy losses and average powers, and their improvements immediately after turning OFF. A parallel resistor connected to both input terminals of the PT is needed to improve the transient characteristics. An equivalent circuit for the PT is first given. Then, an open-circuit voltage, involving a direct current (DC) component and an alternating current (AC) component, and its related energy losses are derived from the equivalent circuit with initial conditions. Moreover, an AC power control system, including a DC-to-AC resonant inverter, a control switch and electronic instruments, is constructed to determine the electrical characteristics of the OFF transient state. Furthermore, the effects of the parallel resistor on the transient characteristics at different parallel resistances are measured. The advantages of adding the parallel resistor also are discussed. From the measured results, the DC time constant is greatly decreased from 9 to 0.04 ms by a 10 k(omega) parallel resistance under open output.

Multijunction high voltage concentrator solar cells

NASA Technical Reports Server (NTRS)

Valco, G. J.; Kapoor, V. J.; Evans, J. C.; Chai, A.-T.

1981-01-01

The standard integrated circuit technology has been developed to design and fabricate new innovative planar multi-junction solar cell chips for concentrated sunlight applications. This 1 cm x 1 cm cell consisted of several voltage generating regions called unit cells which were internally connected in series within a single chip resulting in high open circuit voltages. Typical open-circuit voltages of 3.6 V and short-circuit currents of 90 ma were obtained at 80 AM1 suns. A dramatic increase in both short circuit current and open circuit voltage with increased light levels was observed.

30 CFR 75.900 - Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit...

Code of Federal Regulations, 2011 CFR

2011-07-01

...-phase alternating current equipment; circuit breakers. 75.900 Section 75.900 Mineral Resources MINE... Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit breakers. [Statutory Provisions] Low- and medium-voltage power circuits serving three-phase alternating current...

Model Based Optimization of Integrated Low Voltage DC-DC Converter for Energy Harvesting Applications

NASA Astrophysics Data System (ADS)

Jayaweera, H. M. P. C.; Muhtaroğlu, Ali

2016-11-01

A novel model based methodology is presented to determine optimal device parameters for the fully integrated ultra low voltage DC-DC converter for energy harvesting applications. The proposed model feasibly contributes to determine the maximum efficient number of charge pump stages to fulfill the voltage requirement of the energy harvester application. The proposed DC-DC converter based power consumption model enables the analytical derivation of the charge pump efficiency when utilized simultaneously with the known LC tank oscillator behavior under resonant conditions, and voltage step up characteristics of the cross-coupled charge pump topology. The verification of the model has been done using a circuit simulator. The optimized system through the established model achieves more than 40% maximum efficiency yielding 0.45 V output with single stage, 0.75 V output with two stages, and 0.9 V with three stages for 2.5 kΩ, 3.5 kΩ and 5 kΩ loads respectively using 0.2 V input.

Fast switching thyristor applied in nanosecond-pulse high-voltage generator with closed transformer core.

PubMed

Li, Lee; Bao, Chaobing; Feng, Xibo; Liu, Yunlong; Fochan, Lin

2013-02-01

For a compact and reliable nanosecond-pulse high-voltage generator (NPHVG), the specification parameter selection and potential usage of fast controllable state-solid switches have an important bearing on the optimal design. The NPHVG with closed transformer core and fast switching thyristor (FST) was studied in this paper. According to the analysis of T-type circuit, the expressions for the voltages and currents of the primary and secondary windings on the transformer core of NPHVG were deduced, and the theoretical maximum analysis was performed. For NPHVG, the rise-rate of turn-on current (di/dt) across a FST may exceed its transient rating. Both mean and maximum values of di/dt were determined by the leakage inductances of the transformer, and the difference is 1.57 times. The optimum winding ratio is helpful to getting higher voltage output with lower specification FST, especially when the primary and secondary capacitances have been established. The oscillation period analysis can be effectively used to estimate the equivalent leakage inductance. When the core saturation effect was considered, the maximum di/dt estimated from the oscillating period of the primary current is more accurate than one from the oscillating period of the secondary voltage. Although increasing the leakage inductance of NPHVG can decrease di/dt across FST, it may reduce the output peak voltage of the NPHVG.

ELECTRICAL CIRCUITS USING COLD-CATHODE TRIODE VALVES

DOEpatents

Goulding, F.S.

1957-11-26

An electrical circuit which may be utilized as a pulse generator or voltage stabilizer is presented. The circuit employs a cold-cathode triode valve arranged to oscillate between its on and off stages by the use of selected resistance-capacitance time constant components in the plate and trigger grid circuits. The magnitude of the d-c voltage applied to the trigger grid circuit effectively controls the repetition rate of the output pulses. In the voltage stabilizer arrangement the d-c control voltage is a portion of the supply voltage and the rectified output voltage is substantially constant.

A wireless transmission system powered by an enzyme biofuel cell implanted in an orange.

PubMed

MacVittie, Kevin; Conlon, Tyler; Katz, Evgeny

2015-12-01

A biofuel cell composed of catalytic electrodes made of "buckypaper" modified with PQQ-dependent glucose dehydrogenase and FAD-dependent fructose dehydrogenase on the anode and with laccase on the cathode was used to activate a wireless information transmission system. The cathode/anode pair was implanted in orange pulp extracting power from its content (glucose and fructose in the juice). The open circuit voltage, Voc, short circuit current density, jsc, and maximum power produced by the biofuel cell, Pmax, were found as ca. 0.6 V, ca. 0.33 mA·cm(-2) and 670 μW, respectively. The voltage produced by the biofuel cell was amplified with an energy harvesting circuit and applied to a wireless transmitter. The present study continues the research line where different implantable biofuel cells are used for the activation of electronic devices. The study emphasizes the biosensor and environmental monitoring applications of implantable biofuel cells harvesting power from natural sources, rather than their biomedical use. Copyright © 2014 Elsevier B.V. All rights reserved.

Performance of vegetative and fruits Zn/Cu based electrochemical cell

NASA Astrophysics Data System (ADS)

Khan, Md. Kamrul Alam, Prof. _., Dr.

2017-01-01

We have studied the performance of PKL, Aloe Vera, Tomato and Lemon juice electrochemical Cells without load condition for 1:1 Zn/Cu based electrodes. It was studied the variation of Open circuit voltage (Voc), Short current (Isc) and Maximum Power (Pmax) with the variation of time for PKL, Aloe Vera, Tomato and Lemon juice electrochemical Cells. It was seen from the research observation that the discharge characteristic of the PKL electrochemical cell was more efficient than the other three Aloe Vera, Tomato and Lemon juice electrochemical Cells. Because the Open circuit voltage (Voc), Short current (Isc) and Maximum Power (Pmax) are more stable and steady than the others three Aloe Vera, Tomato and Lemon juice electrochemical Cells. Furthermore, to enhance the performance we have also studied the secondary salt effect by using the NaCl as an electrolyte with the PKL, Aloe Vera and Lemon juice electrochemical Cells. Most of the results have been tabulated and graphically discussed. I am grateful to the authority of the Science and technology ministry,Bangladesh for financial support during the research work.

An analytical-numerical approach for parameter determination of a five-parameter single-diode model of photovoltaic cells and modules

NASA Astrophysics Data System (ADS)

Hejri, Mohammad; Mokhtari, Hossein; Azizian, Mohammad Reza; Söder, Lennart

2016-04-01

Parameter extraction of the five-parameter single-diode model of solar cells and modules from experimental data is a challenging problem. These parameters are evaluated from a set of nonlinear equations that cannot be solved analytically. On the other hand, a numerical solution of such equations needs a suitable initial guess to converge to a solution. This paper presents a new set of approximate analytical solutions for the parameters of a five-parameter single-diode model of photovoltaic (PV) cells and modules. The proposed solutions provide a good initial point which guarantees numerical analysis convergence. The proposed technique needs only a few data from the PV current-voltage characteristics, i.e. open circuit voltage Voc, short circuit current Isc and maximum power point current and voltage Im; Vm making it a fast and low cost parameter determination technique. The accuracy of the presented theoretical I-V curves is verified by experimental data.

Sequential circuit design for radiation hardened multiple voltage integrated circuits

DOEpatents

Clark, Lawrence T [Phoenix, AZ; McIver, III, John K.

2009-11-24

The present invention includes a radiation hardened sequential circuit, such as a bistable circuit, flip-flop or other suitable design that presents substantial immunity to ionizing radiation while simultaneously maintaining a low operating voltage. In one embodiment, the circuit includes a plurality of logic elements that operate on relatively low voltage, and a master and slave latches each having storage elements that operate on a relatively high voltage.

30 CFR 75.902 - Low- and medium-voltage ground check monitor circuits.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low- and medium-voltage ground check monitor... Medium-Voltage Alternating Current Circuits § 75.902 Low- and medium-voltage ground check monitor circuits. [Statutory Provisions] On or before September 30, 1970, low- and medium-voltage resistance...

30 CFR 75.902 - Low- and medium-voltage ground check monitor circuits.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Low- and medium-voltage ground check monitor... Medium-Voltage Alternating Current Circuits § 75.902 Low- and medium-voltage ground check monitor circuits. [Statutory Provisions] On or before September 30, 1970, low- and medium-voltage resistance...

30 CFR 75.902 - Low- and medium-voltage ground check monitor circuits.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Low- and medium-voltage ground check monitor... Medium-Voltage Alternating Current Circuits § 75.902 Low- and medium-voltage ground check monitor circuits. [Statutory Provisions] On or before September 30, 1970, low- and medium-voltage resistance...

30 CFR 75.902 - Low- and medium-voltage ground check monitor circuits.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Low- and medium-voltage ground check monitor... Medium-Voltage Alternating Current Circuits § 75.902 Low- and medium-voltage ground check monitor circuits. [Statutory Provisions] On or before September 30, 1970, low- and medium-voltage resistance...

30 CFR 75.902 - Low- and medium-voltage ground check monitor circuits.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Low- and medium-voltage ground check monitor... Medium-Voltage Alternating Current Circuits § 75.902 Low- and medium-voltage ground check monitor circuits. [Statutory Provisions] On or before September 30, 1970, low- and medium-voltage resistance...

Ferroresonant flux coupled battery charger

NASA Technical Reports Server (NTRS)

McLyman, Colonel W. T. (Inventor)

1987-01-01

A battery charger for incorporation into an electric-powered vehicle is disclosed. The charger includes a ferroresonant voltage-regulating circuit for providing an output voltage proportional to the frequency of an input AC voltage. A high frequency converter converts a DC voltage supplied, for example, from a rectifier connected to a standard AC outlet, to a controlled frequency AC voltage which is supplied to the input of the ferroresonant circuit. The ferroresonant circuit includes an output, a saturable core transformer connected across the output, and a first linear inductor and a capacitor connected in series across the saturable core transformer and tuned to resonate at the third harmonic of the AC voltage from the high frequency converter. The ferroresonant circuit further includes a second linear inductor connected between the input of the ferroresonant circuit and the saturable core transformer. The output voltage from the ferroresonant circuit is rectified and applied across a pair of output terminals adapted to be connected to the battery to be charged. A feedback circuit compares the voltage across the output terminals with a reference voltage and controls the frequency of the AC voltage produced by the high frequency converter to maintain the voltage across the output terminals at a predetermined value. The second linear inductor provides a highly reactive load in the event of a fault across the output terminals to render the charger short-circuit proof.

Lead-free multilayer piezoelectric transformer.

PubMed

Guo, Mingsen; Jiang, X P; Lam, K H; Wang, S; Sun, C L; Chan, Helen L W; Zhao, X Z

2007-01-01

In this article, a multilayer piezoelectric transformer based on lead-free Mn-doped 0.94(Bi(12)Na(12))TiO(3)-0.06BaTiO(3) ceramics is presented. This piezoelectric transformer, with a multilayered construction in the thickness direction, is 8.3 mm long, 8.3 mm wide, and 2.3 mm thick. It operates in the second thickness extensional vibration mode. For a temperature rise of 20 degrees C, the transformer has an output power of >0.3 W. With a matching load resistance of 10 Omega, its maximum efficiency approaches 81.5%, and the maximum voltage gain is 0.14. It has potential to be used in low voltage power supply units such as low power adapter and other electronic circuits.

Triple voltage dc-to-dc converter and method

DOEpatents

Su, Gui-Jia

2008-08-05

A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

A maximum power point tracking algorithm for photovoltaic applications

NASA Astrophysics Data System (ADS)

Nelatury, Sudarshan R.; Gray, Robert

2013-05-01

The voltage and current characteristic of a photovoltaic (PV) cell is highly nonlinear and operating a PV cell for maximum power transfer has been a challenge for a long time. Several techniques have been proposed to estimate and track the maximum power point (MPP) in order to improve the overall efficiency of a PV panel. A strategic use of the mean value theorem permits obtaining an analytical expression for a point that lies in a close neighborhood of the true MPP. But hitherto, an exact solution in closed form for the MPP is not published. This problem can be formulated analytically as a constrained optimization, which can be solved using the Lagrange method. This method results in a system of simultaneous nonlinear equations. Solving them directly is quite difficult. However, we can employ a recursive algorithm to yield a reasonably good solution. In graphical terms, suppose the voltage current characteristic and the constant power contours are plotted on the same voltage current plane, the point of tangency between the device characteristic and the constant power contours is the sought for MPP. It is subject to change with the incident irradiation and temperature and hence the algorithm that attempts to maintain the MPP should be adaptive in nature and is supposed to have fast convergence and the least misadjustment. There are two parts in its implementation. First, one needs to estimate the MPP. The second task is to have a DC-DC converter to match the given load to the MPP thus obtained. Availability of power electronics circuits made it possible to design efficient converters. In this paper although we do not show the results from a real circuit, we use MATLAB to obtain the MPP and a buck-boost converter to match the load. Under varying conditions of load resistance and irradiance we demonstrate MPP tracking in case of a commercially available solar panel MSX-60. The power electronics circuit is simulated by PSIM software.

ANN based Real-Time Estimation of Power Generation of Different PV Module Types

NASA Astrophysics Data System (ADS)

Syafaruddin; Karatepe, Engin; Hiyama, Takashi

Distributed generation is expected to become more important in the future generation system. Utilities need to find solutions that help manage resources more efficiently. Effective smart grid solutions have been experienced by using real-time data to help refine and pinpoint inefficiencies for maintaining secure and reliable operating conditions. This paper proposes the application of Artificial Neural Network (ANN) for the real-time estimation of the maximum power generation of PV modules of different technologies. An intelligent technique is necessary required in this case due to the relationship between the maximum power of PV modules and the open circuit voltage and temperature is nonlinear and can't be easily expressed by an analytical expression for each technology. The proposed ANN method is using input signals of open circuit voltage and cell temperature instead of irradiance and ambient temperature to determine the estimated maximum power generation of PV modules. It is important for the utility to have the capability to perform this estimation for optimal operating points and diagnostic purposes that may be an early indicator of a need for maintenance and optimal energy management. The proposed method is accurately verified through a developed real-time simulator on the daily basis of irradiance and cell temperature changes.

Design of an improved RCD buffer circuit for full bridge circuit

NASA Astrophysics Data System (ADS)

Yang, Wenyan; Wei, Xueye; Du, Yongbo; Hu, Liang; Zhang, Liwei; Zhang, Ou

2017-05-01

In the full bridge inverter circuit, when the switch tube suddenly opened or closed, the inductor current changes rapidly. Due to the existence of parasitic inductance of the main circuit. Therefore, the surge voltage between drain and source of the switch tube can be generated, which will have an impact on the switch and the output voltage. In order to ab sorb the surge voltage. An improve RCD buffer circuit is proposed in the paper. The peak energy will be absorbed through the buffer capacitor of the circuit. The part energy feedback to the power supply, another part release through the resistor in the form of heat, and the circuit can absorb the voltage spikes. This paper analyzes the process of the improved RCD snubber circuit, According to the specific parameters of the main circuit, a reasonable formula for calculating the resistance capacitance is given. A simulation model will be modulated in Multisim, which compared the waveform of tube voltage and the output waveform of the circuit without snubber circuit with the improved RCD snubber circuit. By comparing and analyzing, it is proved that the improved buffer circuit can absorb surge voltage. Finally, experiments are demonstrated to validate that the correctness of the RC formula and the improved RCD snubber circuit.

MULTIPLIER CIRCUIT

DOEpatents

Thomas, R.E.

1959-01-20

An electronic circuit is presented for automatically computing the product of two selected variables by multiplying the voltage pulses proportional to the variables. The multiplier circuit has a plurality of parallel resistors of predetermined values connected through separate gate circults between a first input and the output terminal. One voltage pulse is applied to thc flrst input while the second voltage pulse is applied to control circuitry for the respective gate circuits. Thc magnitude of the second voltage pulse selects the resistors upon which the first voltage pulse is imprcssed, whereby the resultant output voltage is proportional to the product of the input voltage pulses

Present Status of Power Circuit Breaker and its Future

NASA Astrophysics Data System (ADS)

Yoshioka, Yoshio

Gas circuit breaker and vacuum circuit breaker are the 2 main types of circuit breaker used in extra high voltage and medium voltage networks. After reviewing the history of these circuit breakers, their present status and technologies are described. As for future technology, computation of interrupting phenomena, SF6 gas less apparatus and expectation of the high voltage vacuum circuit breaker are discussed.

Comparison of modified driver circuit and capacitor-transfer circuit in longitudinally excited N2 laser.

PubMed

Uno, Kazuyuki; Akitsu, Tetsuya; Nakamura, Kenshi; Jitsuno, Takahisa

2013-04-01

We developed a modified driver circuit composed of a capacitance and a spark gap, called a direct-drive circuit, for a longitudinally excited gas laser. The direct-drive circuit uses a large discharge impedance caused by a long discharge length of the longitudinal excitation scheme and eliminates the buffer capacitance used in the traditional capacitor-transfer circuit. We compared the direct-drive circuit and the capacitor-transfer circuit in a longitudinally excited N2 laser (wavelength: 337 nm). Producing high output energy with the capacitor-transfer circuit requires a large storage capacitance and a discharge tube with optimum dimensions (an inner diameter of 4 mm and a length of 10 cm in this work); in contrast, the direct-drive circuit requires a high breakdown voltage, achieved with a small storage capacitance and a large discharge tube. Additionally, for the same input energy of 792 mJ, the maximum output energy of the capacitor-transfer circuit was 174.2 μJ, and that of the direct-drive circuit was 344.7 μJ.

Offset-free rail-to-rail derandomizing peak detect-and-hold circuit

DOEpatents

DeGeronimo, Gianluigi; O'Connor, Paul; Kandasamy, Anand

2003-01-01

A peak detect-and-hold circuit eliminates errors introduced by conventional amplifiers, such as common-mode rejection and input voltage offset. The circuit includes an amplifier, three switches, a transistor, and a capacitor. During a detect-and-hold phase, a hold voltage at a non-inverting in put terminal of the amplifier tracks an input voltage signal and when a peak is reached, the transistor is switched off, thereby storing a peak voltage in the capacitor. During a readout phase, the circuit functions as a unity gain buffer, in which the voltage stored in the capacitor is provided as an output voltage. The circuit is able to sense signals rail-to-rail and can readily be modified to sense positive, negative, or peak-to-peak voltages. Derandomization may be achieved by using a plurality of peak detect-and-hold circuits electrically connected in parallel.

Implementation of Maximum Power Point Tracking (MPPT) Solar Charge Controller using Arduino

NASA Astrophysics Data System (ADS)

Abdelilah, B.; Mouna, A.; KouiderM’Sirdi, N.; El Hossain, A.

2018-05-01

the platform Arduino with a number of sensors standard can be used as components of an electronic system for acquiring measures and controls. This paper presents the design of a low-cost and effective solar charge controller. This system includes several elements such as the solar panel converter DC/DC, battery, circuit MPPT using Microcontroller, sensors, and the MPPT algorithm. The MPPT (Maximum Power Point Tracker) algorithm has been implemented using an Arduino Nano with the preferred program. The voltage and current of the Panel are taken where the program implemented will work and using this algorithm that MPP will be reached. This paper provides details on the solar charge control device at the maximum power point. The results include the change of the duty cycle with the change in load and thus mean the variation of the buck converter output voltage and current controlled by the MPPT algorithm.

Zero-voltage DC/DC converter with asymmetric pulse-width modulation for DC micro-grid system

NASA Astrophysics Data System (ADS)

Lin, Bor-Ren

2018-04-01

This paper presents a zero-voltage switching DC/DC converter for DC micro-grid system applications. The proposed circuit includes three half-bridge circuit cells connected in primary-series and secondary-parallel in order to lessen the voltage rating of power switches and current rating of rectifier diodes. Thus, low voltage stress of power MOSFETs can be adopted for high-voltage input applications with high switching frequency operation. In order to achieve low switching losses and high circuit efficiency, asymmetric pulse-width modulation is used to turn on power switches at zero voltage. Flying capacitors are used between each circuit cell to automatically balance input split voltages. Therefore, the voltage stress of each power switch is limited at Vin/3. Finally, a prototype is constructed and experiments are provided to demonstrate the circuit performance.

Zero-CO2 emission and low-crossover 'rechargeable' PEM fuel cells using cyclohexane as an organic hydrogen reservoir.

PubMed

Kariya, Nobuko; Fukuoka, Atsushi; Ichikawa, Masaru

2003-03-21

High performance (open circuit voltage = 920 mV, maximum power density = 14-15 mW cm(-2)) of the PEM fuel cell was achieved by using cyclohexane as a fuel with zero-CO2 emission and lower-crossover through PEM than with a methanol-based fuel cell.

Charging-choke circuit with a crowbar for precision control of voltage

DOEpatents

Praeg, W.F.

1975-11-25

The operation of a circuit using a charging choke to obtain dc voltages is improved by constructing the circuit to be capable of producing a higher voltage than the desired value and crowbarring the charging choke when the load voltage reaches the desired value.

Study of monolithic integrated solar blind GaN-based photodetectors

NASA Astrophysics Data System (ADS)

Wang, Ling; Zhang, Yan; Li, Xiaojuan; Xie, Jing; Wang, Jiqiang; Li, Xiangyang

2018-02-01

Monolithic integrated solar blind devices on the GaN-based epilayer, which can directly readout voltage signal, were fabricated and studied. Unlike conventional GaN-based photodiodes, the integrated devices can finish those steps: generation, accumulation of carriers and conversion of carriers to voltage. In the test process, the resetting voltage was square wave with the frequency of 15 and 110 Hz, its maximal voltage of ˜2.5 V. Under LEDs illumination, the maximum of voltage swing is about 2.5 V, and the rise time of voltage swing from 0 to 2.5 V is only about 1.6 ms. However, in dark condition, the node voltage between detector and capacitance nearly decline to zero with time when the resetting voltage was equal to zero. It is found that the leakage current in the circuit gives rise to discharge of the integrated charge. Storage mode operation can offer gain, which is advantage to detection of weak photo signal.

Voltage mode electronically tunable full-wave rectifier

NASA Astrophysics Data System (ADS)

Petrović, Predrag B.; Vesković, Milan; Đukić, Slobodan

2017-01-01

The paper presents a new realization of bipolar full-wave rectifier of input sinusoidal signals, employing one MO-CCCII (multiple output current controlled current conveyor), a zero-crossing detector (ZCD), and one resistor connected to fixed potential. The circuit provides the operating frequency up to 10 MHz with increased linearity and precision in processing of input voltage signal, with a very low harmonic distortion. The errors related to the signal processing and errors bound were investigated and provided in the paper. The PSpice simulations are depicted and agree well with the theoretical anticipation. The maximum power consumption of the converter is approximately 2.83 mW, at ±1.2 V supply voltages.

Resistor-logic demultiplexers for nanoelectronics based on constant-weight codes.

PubMed

Kuekes, Philip J; Robinett, Warren; Roth, Ron M; Seroussi, Gadiel; Snider, Gregory S; Stanley Williams, R

2006-02-28

The voltage margin of a resistor-logic demultiplexer can be improved significantly by basing its connection pattern on a constant-weight code. Each distinct code determines a unique demultiplexer, and therefore a large family of circuits is defined. We consider using these demultiplexers for building nanoscale crossbar memories, and determine the voltage margin of the memory system based on a particular code. We determine a purely code-theoretic criterion for selecting codes that will yield memories with large voltage margins, which is to minimize the ratio of the maximum to the minimum Hamming distance between distinct codewords. For the specific example of a 64 × 64 crossbar, we discuss what codes provide optimal performance for a memory.

Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide.

PubMed

Das, Tanmoy; Chen, Xiang; Jang, Houk; Oh, Il-Kwon; Kim, Hyungjun; Ahn, Jong-Hyun

2016-11-01

2D semiconductor materials are being considered for next generation electronic device application such as thin-film transistors and complementary metal-oxide-semiconductor (CMOS) circuit due to their unique structural and superior electronics properties. Various approaches have already been taken to fabricate 2D complementary logics circuits. However, those CMOS devices mostly demonstrated based on exfoliated 2D materials show the performance of a single device. In this work, the design and fabrication of a complementary inverter is experimentally reported, based on a chemical vapor deposition MoS 2 n-type transistor and a Si nanomembrane p-type transistor on the same substrate. The advantages offered by such CMOS configuration allow to fabricate large area wafer scale integration of high performance Si technology with transition-metal dichalcogenide materials. The fabricated hetero-CMOS inverters which are composed of two isolated transistors exhibit a novel high performance air-stable voltage transfer characteristic with different supply voltages, with a maximum voltage gain of ≈16, and sub-nano watt power consumption. Moreover, the logic gates have been integrated on a plastic substrate and displayed reliable electrical properties paving a realistic path for the fabrication of flexible/transparent CMOS circuits in 2D electronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aeloiza, Eddy C.; Burgos, Rolando P.

A step-down AC/AC converter for use in an electric distribution system includes at least one chopper circuit for each one of a plurality of phases of the AC power, each chopper circuit including a four-quadrant switch coupled in series between primary and secondary sides of the chopper circuit and a current-bidirectional two-quadrant switch coupled between the secondary side of the chopper circuit and a common node. Each current-bidirectional two-quadrant switch is oriented in the same direction, with respect to the secondary side of the corresponding chopper circuit and the common node. The converter further includes a control circuit configured tomore » pulse-width-modulate control inputs of the switches, to convert a first multiphase AC voltage at the primary sides of the chopper circuits to a second multiphase AC voltage at the secondary sides of the chopper circuits, the second multiphase AC voltage being lower in voltage than the first multiphase AC voltage.« less

Similarity between the response of memristive and memcapacitive circuits subjected to ramped voltage

NASA Astrophysics Data System (ADS)

Kanygin, Mikhail A.; Katkov, Mikhail V.; Pershin, Yuriy V.

2017-07-01

We report a similar feature in the response of resistor-memristor and capacitor-memcapacitor circuits with threshold-type memory devices driven by triangular waveform voltage. In both cases, the voltage across the memory device is stabilized during the switching of the memory device state. While in the memristive circuit this feature is observed when the applied voltage changes in one direction, the memcapacitive circuit with a ferroelectric memcapacitor demonstrates the voltage stabilization effect at both sweep directions. The discovered behavior of capacitor-memcapacitor circuit is also demonstrated experimentally. We anticipate that our observation can be used in the design of electronic circuits with emergent memory devices as well as in the identification and characterization of memory effects in threshold-type memory devices.

A low-power wide range transimpedance amplifier for biochemical sensing.

PubMed

Rodriguez-Villegas, Esther

2007-01-01

This paper presents a novel low voltage and low power transimpedance amplifier for amperometric potentiostats. The power is optimized by having three different gain settings for different current ranges, which can be programmed with a biasing current. The voltage ranges have been optimized by using FGMOS transistors in a second voltage amplification stage that simultaneously allow for offset calibration as well as independent biasing of the gates. The circuit operates with input currents from 1 pA to 1 microA, with a maximum power supply voltage of 1.5 V and consumes 82.5 nW, 9.825 microW, 47.325 microW for currents varying from (1 pA, 0.25 nA), (0.25 nA, 62.5 nA) and (62.5 nA, 1 microA) respectively.

Driver circuit for solid state light sources

DOEpatents

Palmer, Fred; Denvir, Kerry; Allen, Steven

2016-02-16

A driver circuit for a light source including one or more solid state light sources, a luminaire including the same, and a method of so driving the solid state light sources are provided. The driver circuit includes a rectifier circuit that receives an alternating current (AC) input voltage and provides a rectified AC voltage. The driver circuit also includes a switching converter circuit coupled to the light source. The switching converter circuit provides a direct current (DC) output to the light source in response to the rectified AC voltage. The driver circuit also includes a mixing circuit, coupled to the light source, to switch current through at least one solid state light source of the light source in response to each of a plurality of consecutive half-waves of the rectified AC voltage.

Comparison of four MPPT techniques for PV systems

NASA Astrophysics Data System (ADS)

Atik, L.; Petit, P.; Sawicki, J. P.; Ternifi, Z. T.; Bachir, G.; Aillerie, M.

2016-07-01

The working behavior of a module / PV array is non-linear and highly dependent on working conditions. As a given condition, there is only one point at which the level of available power at its output is maximum. This point varies with time, enlightenment and temperature. To ensure optimum operation, the use of MPPT control allows us to extract the maximum power. This paper presents a comparative study of four widely-adopted MPPT algorithms, such as Perturb and Observe, Incremental Conductance, Measurements of the variation of the open circuit voltage or of the short-circuit current. Their performance is evaluated using, for all these techniques. In particular, this study compares the behaviors of each technique in presence of solar irradiation variations and temperature fluctuations. These MPPT techniques will be compared using the Matlab / Simulink tool.

Fuzzy Logic Controlled Solar Module for Driving Three- Phase Induction Motor

NASA Astrophysics Data System (ADS)

Afiqah Zainal, Nurul; Sooi Tat, Chan; Ajisman

2016-02-01

Renewable energy produced by solar module gives advantages for generated three- phase induction motor in remote area. But, solar module's ou tput is uncertain and complex. Fuzzy logic controller is one of controllers that can handle non-linear system and maximum power of solar module. Fuzzy logic controller used for Maximum Power Point Tracking (MPPT) technique to control Pulse-Width Modulation (PWM) for switching power electronics circuit. DC-DC boost converter used to boost up photovoltaic voltage to desired output and supply voltage source inverter which controlled by three-phase PWM generated by microcontroller. IGBT switched Voltage source inverter (VSI) produced alternating current (AC) voltage from direct current (DC) source to control speed of three-phase induction motor from boost converter output. Results showed that, the output power of solar module is optimized and controlled by using fuzzy logic controller. Besides that, the three-phase induction motor can be drive and control using VSI switching by the PWM signal generated by the fuzzy logic controller. This concluded that the non-linear system can be controlled and used in driving three-phase induction motor.

Cell voltage versus electrode potential range in aqueous supercapacitors

PubMed Central

Dai, Zengxin; Peng, Chuang; Chae, Jung Hoon; Ng, Kok Chiang; Chen, George Z.

2015-01-01

Supercapacitors with aqueous electrolytes and nanostructured composite electrodes are attractive because of their high charging-discharging speed, long cycle life, low environmental impact and wide commercial affordability. However, the energy capacity of aqueous supercapacitors is limited by the electrochemical window of water. In this paper, a recently reported engineering strategy is further developed and demonstrated to correlate the maximum charging voltage of a supercapacitor with the capacitive potential ranges and the capacitance ratio of the two electrodes. Beyond the maximum charging voltage, a supercapacitor may still operate, but at the expense of a reduced cycle life. In addition, it is shown that the supercapacitor performance is strongly affected by the initial and zero charge potentials of the electrodes. Further, the differences are highlighted and elaborated between freshly prepared, aged under open circuit conditions, and cycled electrodes of composites of conducting polymers and carbon nanotubes. The first voltammetric charging-discharging cycle has an electrode conditioning effect to change the electrodes from their initial potentials to the potential of zero voltage, and reduce the irreversibility. PMID:25897670

Fabrication and characterization of a piezoelectric energy harvester with clamped-clamped beams

NASA Astrophysics Data System (ADS)

Cui, Yan; Yu, Menglin; Gao, Shiqiao; Kong, Xiangxin; Gu, Wang; Zhang, Ran; Liu, Bowen

2018-05-01

This work presents a piezoelectric energy harvester with clamped-clamped beams, and it is fabricated with MEMS process. When excited by sinusoidal vibration, the energy harvester has a sharp jumping down phenomenon and the measured frequency responses of the clamped-clamped beams structure show a larger bandwidth which is about 56Hz, more efficient than that with cantilever beams. When the exciting acceleration ac is 12m/s2, the energy harvester achieves to a maximum open-circuit voltage of 94mV on one beam. The load voltage is proportional to the load resistance, and it increased with the increase of load resistance. Connected four beams in series, the output power reaches the maximum value of 730 nW and the optimal load is 15KΩ to one beam.

Polymer solar cells with enhanced open-circuit voltage and efficiency

NASA Astrophysics Data System (ADS)

Chen, Hsiang-Yu; Hou, Jianhui; Zhang, Shaoqing; Liang, Yongye; Yang, Guanwen; Yang, Yang; Yu, Luping; Wu, Yue; Li, Gang

2009-11-01

Following the development of the bulk heterojunction structure, recent years have seen a dramatic improvement in the efficiency of polymer solar cells. Maximizing the open-circuit voltage in a low-bandgap polymer is one of the critical factors towards enabling high-efficiency solar cells. Study of the relation between open-circuit voltage and the energy levels of the donor/acceptor in bulk heterojunction polymer solar cells has stimulated interest in modifying the open-circuit voltage by tuning the energy levels of polymers. Here, we show that the open-circuit voltage of polymer solar cells constructed based on the structure of a low-bandgap polymer, PBDTTT, can be tuned, step by step, using different functional groups, to achieve values as high as 0.76 V. This increased open-circuit voltage combined with a high short-circuit current density results in a polymer solar cell with a power conversion efficiency as high as 6.77%, as certified by the National Renewable Energy Laboratory.

Brushless exciters using a high temperature superconducting field winding

DOEpatents

Garces, Luis Jose [Schenectady, NY; Delmerico, Robert William [Clifton Park, NY; Jansen, Patrick Lee [Scotia, NY; Parslow, John Harold [Scotia, NY; Sanderson, Harold Copeland [Tribes Hill, NY; Sinha, Gautam [Chesterfield, MO

2008-03-18

A brushless exciter for a synchronous generator or motor generally includes a stator and a rotor rotatably disposed within the stator. The rotor has a field winding and a voltage rectifying bridge circuit connected in parallel to the field winding. A plurality of firing circuits are connected the voltage rectifying bridge circuit. The firing circuit is configured to fire a signal at an angle of less than 90.degree. or at an angle greater than 90.degree.. The voltage rectifying bridge circuit rectifies the AC voltage to excite or de-excite the field winding.

30 CFR 77.902 - Low- and medium-voltage ground check monitor circuits.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Low- and medium-voltage ground check monitor... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.902 Low- and medium-voltage ground check monitor circuits. On and after September 30, 1971, three-phase low- and...

30 CFR 77.902 - Low- and medium-voltage ground check monitor circuits.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Low- and medium-voltage ground check monitor... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.902 Low- and medium-voltage ground check monitor circuits. On and after September 30, 1971, three-phase low- and...

30 CFR 77.902 - Low- and medium-voltage ground check monitor circuits.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Low- and medium-voltage ground check monitor... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.902 Low- and medium-voltage ground check monitor circuits. On and after September 30, 1971, three-phase low- and...

30 CFR 77.902 - Low- and medium-voltage ground check monitor circuits.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low- and medium-voltage ground check monitor... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.902 Low- and medium-voltage ground check monitor circuits. On and after September 30, 1971, three-phase low- and...

30 CFR 77.902 - Low- and medium-voltage ground check monitor circuits.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Low- and medium-voltage ground check monitor... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.902 Low- and medium-voltage ground check monitor circuits. On and after September 30, 1971, three-phase low- and...

RF lockout circuit for electronic locking system

NASA Astrophysics Data System (ADS)

Becker, Earl M., Jr.; Miller, Allen

1991-02-01

An electronics lockout circuit was invented that includes an antenna adapted to receive radio frequency signals from a transmitter, and a radio frequency detector circuit which converts the radio frequency signals into a first direct current voltage indicative of the relative strength of the field resulting from the radio frequency signals. The first direct current voltage is supplied to a trigger circuit which compares this direct current voltage to an adjustable direct current reference voltage. This provides a second direct current voltage at the output whenever the amplitude of the first direct current voltage exceeds the amplitude of the reference voltage provided by the comparator circuit. This is supplied to a disconnect relay circuit which, upon receiving a signal from the electronic control unit of an electronic combination lock during the time period at which the second direct current voltage is present, isolates the door strike coil of a security door from the electronic control unit. This prevents signals falsely generated by the electronic control unit because of radio frequency signals in the vicinity of the electronic control unit energizing the door strike coil and accidentally opening a security door.

Fast switching wideband rectifying circuit for future RF energy harvesting

NASA Astrophysics Data System (ADS)

Asmeida, Akrem; Mustam, Saizalmursidi Md; Abidin, Z. Z.; Ashyap, A. Y. I.

2017-09-01

This paper presents the design and simulation of fast switching microwave rectifying circuit for ultra wideband patch antenna over a dual-frequency band (1.8 GHz for GSM and 2.4 GHz for ISM band). This band was chosen due to its high signal availability in the surrounding environment. New rectifying circuit topology with pair-matching trunks is designed using Advanced Design System (ADS) software. These trunks are interfaced with power divider to achieve good bandwidth, fast switching and high efficiency. The power divider acts as a good isolator between the trunks and its straightforward design structure makes it a good choice for a single feed UWB antenna. The simulated results demonstrate that the maximum output voltage is 2.13 V with an input power of -5 dBm. Moreover, the rectifier offers maximum efficiency of 86% for the input power of -5 dBm at given band, which could easily power up wireless sensor networks (WSN) and other small devices sufficiently.

Wideband energy harvesting for piezoelectric devices with linear resonant behavior.

PubMed

Luo, Cheng; Hofmann, Heath F

2011-07-01

In this paper, an active energy harvesting technique for a spring-mass-damper mechanical resonator with piezoelectric electromechanical coupling is investigated. This technique applies a square-wave voltage to the terminals of the device at the same frequency as the mechanical excitation. By controlling the magnitude and phase angle of this voltage, an effective impedance matching can be achieved which maximizes the amount of power extracted from the device. Theoretically, the harvested power can be the maximum possible value, even at off-resonance frequencies. However, in actual implementation, the efficiency of the power electronic circuit limits the amount of power harvested. A power electronic full-bridge converter is built to implement the technique. Experimental results show that the active technique can increase the effective bandwidth by a factor of more than 2, and harvests significantly higher power than rectifier-based circuits at off-resonance frequencies.

A membraneless single compartment abiotic glucose fuel cell

NASA Astrophysics Data System (ADS)

Slaughter, Gymama; Sunday, Joshua

2014-09-01

A simple energy harvesting strategy has been developed to selectively catalyze glucose in the presence of oxygen in a glucose/O2 fuel cell. The anode consists of an abiotic catalyst Al/Au/ZnO, in which ZnO seed layer was deposited on the surface of Al/Au substrate using hydrothermal method. The cathode is constructed from a single rod of platinum with an outer diameter of 500 μm. The abiotic glucose fuel cell was studied in phosphate buffer solution (pH 7.4) containing 5 mM glucose at a temperature of 22 °C. The cell is characterized according to its open-circuit voltage, polarization profile, and power density plot. Under these conditions, the abiotic glucose fuel cell possesses an open-circuit voltage of 840 mV and delivered a maximum power density of 16.2 μW cm-2 at a cell voltage of 495 mV. These characteristics are comparable to biofuel cell utilizing a much more complex system design. Such low-cost lightweight abiotic catalyzed glucose fuel cells have a great promise to be optimized, miniaturized to power bio-implantable devices.

Novel control system of the high-voltage IGBT-switch

NASA Astrophysics Data System (ADS)

Ponomarev, A. V.; Mamontov, Y. I.; Gusev, A. I.; Pedos, M. S.

2017-05-01

HV solid-state switch control circuit was developed and tested. The switch was made with series connection IGBT-transistors. The distinctive feature of the circuit is an ability to fine-tune the switching time of every transistor. Simultaneous switching provides balancing of the dynamic voltage at all switch elements. A separate control board switches on and off every transistor. On and off signals from the main conductor are sent to the board by current pulses of different polarity. A positive pulse provides the transistor switch-on, while a negative pulse provides their switch-off. The time interval between pulses defines the time when the switch is turned on. The minimum time when the switch is turned on equals to a few microseconds, while the maximum time is not limited. This paper shows the test results of 4 kV switch prototype. The switch was used to produce rectangular pulses of a microsecond range under resistive load. The possibility to generate the damped harmonic oscillations was also tested. On the basis of this approach, positive testing results open up a possibility to design switches under an operating voltage of tens kilovolts.

Performance degradation of photovoltaic modules at different sites

NASA Astrophysics Data System (ADS)

Arab, A. Hadj; Mahammed, I. Hadj; Ould Amrouche, S.; Taghezouit, B.; Yassaa, N.

2018-05-01

In this work are presented results of electrical performance measurements of 120 crystalline silicon PV modules following long-term outdoor measurements. A set of 90 PV modules represent the first grid-connected photovoltaic (PV) system in Algeria, installed at the level of the “Centre de Développement des Energies Renouvelables” (CDER) site (Mediterranean coast), Bouzareah. The other 30 PV modules were undertaken in an arid area of the desert region of Ghardaïa site, about 600 km south of Algiers, with measurements collected from different applications. Following different characterization tests, we noticed that the all tested PV modules kept their power-generating rate except a slight reduction. Therefore, a mathematical model has been used to carry out PV module testing at different irradiance and temperature levels. Hence, different PV module parameters have been calculated from the recorded values of the open-circuit voltage, the short-circuit current, the voltage and current at maximum power point. The electrical measurements have indicated different degradations of current-voltage parameters. All the PV modules stated a decrease in the nominal power, which is variable from one module to another.

Simple programmable voltage reference for low frequency noise measurements

NASA Astrophysics Data System (ADS)

Ivanov, V. E.; Chye, En Un

2018-05-01

The paper presents a circuit design of a low-noise voltage reference based on an electric double-layer capacitor, a microcontroller and a general purpose DAC. A large capacitance value (1F and more) makes it possible to create low-pass filter with a large time constant, effectively reducing low-frequency noise beyond its bandwidth. Choosing the optimum value of the resistor in the RC filter, one can achieve the best ratio between the transient time, the deviation of the output voltage from the set point and the minimum noise cut-off frequency. As experiments have shown, the spectral density of the voltage at a frequency of 1 kHz does not exceed 1.2 nV/√Hz the maximum deviation of the output voltage from the predetermined does not exceed 1.4 % and depends on the holding time of the previous value. Subsequently, this error is reduced to a constant value and can be compensated.

Voltage equalization of an ultracapacitor module by cell grouping using number partitioning algorithm

NASA Astrophysics Data System (ADS)

Oyarbide, E.; Bernal, C.; Molina, P.; Jiménez, L. A.; Gálvez, R.; Martínez, A.

2016-01-01

Ultracapacitors are low voltage devices and therefore, for practical applications, they need to be used in modules of series-connected cells. Because of the inherent manufacturing tolerance of the capacitance parameter of each cell, and as the maximum voltage value cannot be exceeded, the module requires inter-cell voltage equalization. If the intended application suffers repeated fast charging/discharging cycles, active equalization circuits must be rated to full power, and thus the module becomes expensive. Previous work shows that a series connection of several sets of paralleled ultracapacitors minimizes the dispersion of equivalent capacitance values, and also the voltage differences between capacitors. Thus the overall life expectancy is improved. This paper proposes a method to distribute ultracapacitors with a number partitioning-based strategy to reduce the dispersion between equivalent submodule capacitances. Thereafter, the total amount of stored energy and/or the life expectancy of the device can be considerably improved.

Submicron nickel-oxide-gold tunnel diode detectors for rectennas

NASA Technical Reports Server (NTRS)

Hoofring, A. B.; Kapoor, V. J.; Krawczonek, W.

1989-01-01

The characteristics of a metal-oxide-metal (MOM) tunnel diode made of nickel, nickel-oxide, and gold, designed and fabricated by standard integrated circuit technology for use in FIR rectennas, are presented. The MOM tunnel diode was formed by overlapping a 0.8-micron-wide layer of 1000-A of nickel, which was oxidized to form a thin layer of nickel oxide, with a 1500 A-thick layer of gold. The dc current-voltage characteristics of the MOM diode showed that the current dependence on voltage was linear about zero bias up to a bias of about 70 mV. The maximum detection of a low-level signal (10-mV ac) was determined to be at a dc voltage of 70 mV across the MOM diode. The rectified output signal due to a chopped 10.6-micron CO2 laser incident upon the rectenna device was found to increase with dc bias, with a maximum value of 1000 nV for a junction bias of 100 mV at room temperature.

Chapter 11.2: Inverters, Power Optimizers, and Microinverters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deline, Christopher A

Inverters span a wide range of sizes, topologies, and connection voltages: from utility-scale megawatt inverters to string inverters. Switch-mode power conversion relies on high frequency chopping of DC signal to periodically charge and discharge energy storage elements, such as inductors and capacitors. Additional circuit components are required to address practical issues in inverters such as voltage ripple and harmonic distortion. Inverters are beginning to incorporate components with a bandgap above should be 3 eV, such as SiC and GaN. Photovoltaic (PV) modules respond dynamically to changing temperature and irradiation conditions. Thus, maximum DC power extraction requires periodic adjustment of themore » PV voltage and current operating point. An inverter's total efficiency is measured by the product of its conversion efficiency and the maximum-power-point tracking (MPPT) efficiency. This chapter lists the primary functions of inverters that include auxiliary capabilities, such as monitoring of DC and AC performance, and other error reporting.« less

A screen-printed circular-type paper-based glucose/O2 biofuel cell

NASA Astrophysics Data System (ADS)

Shitanda, Isao; Nohara, Saki; Hoshi, Yoshinao; Itagaki, Masayuki; Tsujimura, Seiya

2017-08-01

The printable paper-based enzymatic biofuel cell (PBFC) to directly power small devices is an important objective for realizing cost-effective and disposable energy harvesting devices. In the present study, a screen-printed circular-type PBFC, composed of a series of 5 individual cells, was constructed. The PBFC exhibited the open circuit potential of 2.65 V and maximum power of 350 μW at 1.55 V, which were sufficient to illuminate an LED without requiring a booster circuit. The output voltage of this PBFC can also be easily adjusted as required.

Synchronous Half-Wave Rectifier

NASA Technical Reports Server (NTRS)

Rippel, Wally E.

1989-01-01

Synchronous rectifying circuit behaves like diode having unusually low voltage drop during forward-voltage half cycles. Circuit particularly useful in power supplies with potentials of 5 Vdc or less, where normal forward-voltage drops in ordinary diodes unacceptably large. Fabricated as monolithic assembly or as hybrid. Synchronous half-wave rectifier includes active circuits to attain low forward voltage drop and high rectification efficiency.

The effect of working gas pressure on the switching rate of a kivotron

NASA Astrophysics Data System (ADS)

Bokhan, P. A.; Gugin, P. P.; Zakrevsky, D. E.; Lavrukhin, M. A.

2016-05-01

The switching rate in gas-discharge devices (kivotrons) based on an "open" discharge with counterpropagating electron beams is studied experimentally. Structures with a total cathode area of 2 cm2 were used. A monotonic reduction in the switching time with an increase in the working gas pressure and in the voltage amplitude at the time of breakdown is demonstrated. The minimum switching time is ~240 ps at a voltage of 17 kV. The maximum current rise rate, which is limited by the discharge circuit inductance, is 3 × 1012 A/s.

Response characteristic of high-speed on/off valve with double voltage driving circuit

NASA Astrophysics Data System (ADS)

Li, P. X.; Su, M.; Zhang, D. B.

2017-07-01

High-speed on/off valve, an important part of turbocharging system, its quick response has a direct impact on the turbocharger pressure cycle. The methods of improving the response characteristic of high speed on/off valve include increasing the magnetic force of armature and the voltage, decreasing the mass and current of coil. The less coil number of turns, the solenoid force is smaller. The special armature structure and the magnetic material will raise cost. In this paper a new scheme of double voltage driving circuit is investigated, in which the original driving circuit of high-speed on/off valve is replaced by double voltage driving circuit. The detailed theoretical analysis and simulations were carried out on the double voltage driving circuit, it showed that the switching time and delay time of the valve respectively are 3.3ms, 5.3ms, 1.9ms and 1.8ms. When it is driven by the double voltage driving circuit, the switching time and delay time of this valve are reduced, optimizing its response characteristic. By the comparison related factors (such as duty cycle or working frequency) about influences on response characteristic, the superior of double voltage driving circuit has been further confirmed.

DIFFERENTIAL FAULT SENSING CIRCUIT

DOEpatents

Roberts, J.H.

1961-09-01

A differential fault sensing circuit is designed for detecting arcing in high-voltage vacuum tubes arranged in parallel. A circuit is provided which senses differences in voltages appearing between corresponding elements likely to fault. Sensitivity of the circuit is adjusted to some level above which arcing will cause detectable differences in voltage. For particular corresponding elements, a group of pulse transformers are connected in parallel with diodes connected across the secondaries thereof so that only voltage excursions are transmitted to a thyratron which is biased to the sensitivity level mentioned.

30 CFR 75.800-3 - Testing, examination and maintenance of circuit breakers; procedures.

Code of Federal Regulations, 2010 CFR

2010-07-01

... High-Voltage Distribution § 75.800-3 Testing, examination and maintenance of circuit breakers; procedures. (a) Circuit breakers and their auxiliary devices protecting underground high-voltage circuits...

Active-Matrix Organic Light Emission Diode Pixel Circuit for Suppressing and Compensating for the Threshold Voltage Degradation of Hydrogenated Amorphous Silicon Thin Film Transistors

NASA Astrophysics Data System (ADS)

Shin, Hee-Sun; Lee, Won-Kyu; Park, Sang-Guen; Kuk, Seung-Hee; Han, Min-Koo

2009-03-01

A new hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) pixel circuit for active-matrix organic light emission diodes (AM-OLEDs), which significantly compensates the OLED current degradation by memorizing the threshold voltage of driving TFT and suppresses the threshold voltage shift of a-Si:H TFTs by negative bias annealing, is proposed and fabricated. During the first half of each frame, the driving TFT of the proposed pixel circuit supplies current to the OLED, which is determined by modified data voltage in the compensation scheme. The proposed pixel circuit was able to compensate the threshold voltage shift of the driving TFT as well as the OLED. During the remaining half of each frame, the proposed pixel circuit induces the recovery of the threshold voltage degradation of a-Si:H TFTs owing to the negative bias annealing. The experimental results show that the proposed pixel circuit was able to successfully compensate for the OLED current degradation and suppress the threshold voltage degradation of the driving TFT.

Growth and analysis of micro and nano CdTe arrays for solar cell applications

NASA Astrophysics Data System (ADS)

Aguirre, Brandon Adrian

CdTe is an excellent material for infrared detectors and photovoltaic applications. The efficiency of CdTe/CdS solar cells has increased very rapidly in the last 3 years to ˜20% but is still below the maximum theoretical value of 30%. Although the short-circuit current density is close to its maximum of 30 mA/cm2, the open circuit voltage has potential to be increased further to over 1 Volt. The main limitation that prevents further increase in the open-circuit voltage and therefore efficiency is the high defect density in the CdTe absorber layer. Reducing the defect density will increase the open-circuit voltage above 1 V through an increase in the carrier lifetime and concentration to tau >10 ns and p > 10 16 cm-3, respectively. However, the large lattice mismatch (10%) between CdTe and CdS and the polycrystalline nature of the CdTe film are the fundamental reasons for the high defect density and pose a difficult challenge to solve. In this work, a method to physically and electrically isolate the different kinds of defects at the nanoscale and understand their effect on the electrical performance of CdTe is presented. A SiO2 template with arrays of window openings was deposited between the CdTe and CdS to achieve selective-area growth of the CdTe via close-space sublimation. The diameter of the window openings was varied from the micro to the nanoscale to study the effect of size on nucleation, grain growth, and defect density. The resulting structures enabled the possibility to electrically isolate and individually probe micrometer and nanoscale sized CdTe/CdS cells. Electron back-scattered diffraction was used to observe grain orientation and defects in the miniature cells. Scanning and transmission electron microscopy was used to study the morphology, grain boundaries, grain orientation, defect structure, and strain in the layers. Finally, conducting atomic force microscopy was used to study the current-voltage characteristics of the solar cells. An important part of this work was the ability to directly correlate the one-to-one relationship between the electrical performance and defect structure of individual nanoscale cells. This method is general and can be applied to other material systems to study the electrical-microstructure relationship on a one-to-one basis with nanoscale resolution.

MOSFET analog memory circuit achieves long duration signal storage

NASA Technical Reports Server (NTRS)

1966-01-01

Memory circuit maintains the signal voltage at the output of an analog signal amplifier when the input signal is interrupted or removed. The circuit uses MOSFET /Metal Oxide Semiconductor Field Effect Transistor/ devices as voltage-controlled switches, triggered by an external voltage-sensing device.

Comparison of four MPPT techniques for PV systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Atik, L., E-mail: lotfi.atik@univ-usto.dz; Ternifi, Z. T.; Université de Lorraine, LMOPS, EA 4423, 57070 Metz

2016-07-25

The working behavior of a module / PV array is non-linear and highly dependent on working conditions. As a given condition, there is only one point at which the level of available power at its output is maximum. This point varies with time, enlightenment and temperature. To ensure optimum operation, the use of MPPT control allows us to extract the maximum power. This paper presents a comparative study of four widely-adopted MPPT algorithms, such as Perturb and Observe, Incremental Conductance, Measurements of the variation of the open circuit voltage or of the short-circuit current. Their performance is evaluated using, formore » all these techniques. In particular, this study compares the behaviors of each technique in presence of solar irradiation variations and temperature fluctuations. These MPPT techniques will be compared using the Matlab / Simulink tool.« less

Effect of salt concentration and mediators in salt bridge microbial fuel cell for electricity generation from synthetic wastewater.

PubMed

Sevda, Surajbhan; Sreekrishnan, T R

2012-01-01

The aim of this study was to investigate the feasibility of using agar salt bridges for proton transport in Microbial Fuel Cells (MFC). It also tries to elucidate and effect of mediators on electricity production from wastewaters through experimentation using a simulated wastewater. In order to offset the very high cost of proton exchange membrane, salt bridges have been used in dual chamber MFCs. When the concentration of salt was varied in agar salt bridges from 1% to 10%, the volumetric power density changed from 1.71 to 84.99 mW/m(3) with a concomitant variation in power density from 0.32 to 16.02 mW/m(2). The maximum power density was observed at 5% salt concentration with 10% agar, which was accompanied by 88.41% COD reduction. In the case of methylene blue (0.01 mM) as the electron mediator, the voltage and current generation were 0.551 V and 0.47 mA, respectively. A maximum open circuit voltage of 0.718 V was seen at 0.08 mM methylene blue concentration, whereas maximum power densities of 17.59 mW/m(2) and 89.22 mW/m(3) were obtained. Different concentrations of neutral red were also tried out as mediators. A maximum open circuit voltage of 0.730 V was seen at 0.01 mM neutral red, corresponding to a power density of 12.02 mW/m(2) (volumetric power density of 60.97 mW/m(3)). Biofilm formation on the electrode surface was not observed in the presence of mediators, but was present in the absence of mediators. The results clearly demonstrated the feasibility to use agar salt bridge for proton transport and role of mediators in MFCs to generate electricity.

Thermocouple-Signal-Conditioning Circuit

NASA Technical Reports Server (NTRS)

Simon, Richard A.

1991-01-01

Thermocouple-signal-conditioning circuit acting in conjunction with thermocouple, exhibits electrical behavior of voltage in series with resistance. Combination part of input bridge circuit of controller. Circuit configured for either of two specific applications by selection of alternative resistances and supply voltages. Includes alarm circuit detecting open circuit in thermocouple and provides off-scale output to signal malfunctions.

30 CFR 75.800-4 - Testing, examination, and maintenance of circuit breakers; record.

Code of Federal Regulations, 2010 CFR

2010-07-01

... Underground High-Voltage Distribution § 75.800-4 Testing, examination, and maintenance of circuit breakers... adjustment of all circuit breakers protecting high-voltage circuits which enter any underground area of the...

Novel high-frequency energy-efficient pulsed-dc generator for capacitively coupled plasma discharge

NASA Astrophysics Data System (ADS)

Mamun, Md Abdullah Al; Furuta, Hiroshi; Hatta, Akimitsu

2018-03-01

The circuit design, assembly, and operating tests of a high-frequency and high-voltage (HV) pulsed dc generator (PDG) for capacitively coupled plasma (CCP) discharge inside a vacuum chamber are reported. For capacitive loads, it is challenging to obtain sharp rectangular pulses with fast rising and falling edges, requiring intense current for quick charging and discharging. The requirement of intense current generally limits the pulse operation frequency. In this study, we present a new type of PDG consisting of a pair of half-resonant converters and a constant current-controller circuit connected with HV solid-state power switches that can deliver almost rectangular high voltage pulses with fast rising and falling edges for CCP discharge. A prototype of the PDG is assembled to modulate from a high-voltage direct current (HVdc) input into a pulsed HVdc output, while following an input pulse signal and a set current level. The pulse rise time and fall time are less than 500 ns and 800 ns, respectively, and the minimum pulse width is 1 µs. The maximum voltage for a negative pulse is 1000 V, and the maximum repetition frequency is 500 kHz. During the pulse on time, the plasma discharge current is controlled steadily at the set value. The half-resonant converters in the PDG perform recovery of the remaining energy from the capacitive load at every termination of pulse discharge. The PDG performed with a high energy efficiency of 85% from the HVdc input to the pulsed dc output at a repetition rate of 1 kHz and with stable plasma operation in various discharge conditions. The results suggest that the developed PDG can be considered to be more efficient for plasma processing by CCP.

Novel high-frequency energy-efficient pulsed-dc generator for capacitively coupled plasma discharge.

PubMed

Mamun, Md Abdullah Al; Furuta, Hiroshi; Hatta, Akimitsu

2018-03-01

The circuit design, assembly, and operating tests of a high-frequency and high-voltage (HV) pulsed dc generator (PDG) for capacitively coupled plasma (CCP) discharge inside a vacuum chamber are reported. For capacitive loads, it is challenging to obtain sharp rectangular pulses with fast rising and falling edges, requiring intense current for quick charging and discharging. The requirement of intense current generally limits the pulse operation frequency. In this study, we present a new type of PDG consisting of a pair of half-resonant converters and a constant current-controller circuit connected with HV solid-state power switches that can deliver almost rectangular high voltage pulses with fast rising and falling edges for CCP discharge. A prototype of the PDG is assembled to modulate from a high-voltage direct current (HVdc) input into a pulsed HVdc output, while following an input pulse signal and a set current level. The pulse rise time and fall time are less than 500 ns and 800 ns, respectively, and the minimum pulse width is 1 µs. The maximum voltage for a negative pulse is 1000 V, and the maximum repetition frequency is 500 kHz. During the pulse on time, the plasma discharge current is controlled steadily at the set value. The half-resonant converters in the PDG perform recovery of the remaining energy from the capacitive load at every termination of pulse discharge. The PDG performed with a high energy efficiency of 85% from the HVdc input to the pulsed dc output at a repetition rate of 1 kHz and with stable plasma operation in various discharge conditions. The results suggest that the developed PDG can be considered to be more efficient for plasma processing by CCP.

Battery Cell By-Pass Circuit

NASA Technical Reports Server (NTRS)

Mumaw, Susan J. (Inventor); Evers, Jeffrey (Inventor); Craig, Calvin L., Jr. (Inventor); Walker, Stuart D. (Inventor)

2001-01-01

The invention is a circuit and method of limiting the charging current voltage from a power supply net work applied to an individual cell of a plurality of cells making up a battery being charged in series. It is particularly designed for use with batteries that can be damaged by overcharging, such as Lithium-ion type batteries. In detail. the method includes the following steps: 1) sensing the actual voltage level of the individual cell; 2) comparing the actual voltage level of the individual cell with a reference value and providing an error signal representative thereof; and 3) by-passing the charging current around individual cell necessary to keep the individual cell voltage level generally equal a specific voltage level while continuing to charge the remaining cells. Preferably this is accomplished by by-passing the charging current around the individual cell if said actual voltage level is above the specific voltage level and allowing the charging current to the individual cell if the actual voltage level is equal or less than the specific voltage level. In the step of bypassing the charging current, the by-passed current is transferred at a proper voltage level to the power supply. The by-pass circuit a voltage comparison circuit is used to compare the actual voltage level of the individual cell with a reference value and to provide an error signal representative thereof. A third circuit, designed to be responsive to the error signal, is provided for maintaining the individual cell voltage level generally equal to the specific voltage level. Circuitry is provided in the third circuit for bypassing charging current around the individual cell if the actual voltage level is above the specific voltage level and transfers the excess charging current to the power supply net work. The circuitry also allows charging of the individual cell if the actual voltage level is equal or less than the specific voltage level.

Logarithmic circuit with wide dynamic range

NASA Technical Reports Server (NTRS)

Wiley, P. H.; Manus, E. A. (Inventor)

1978-01-01

A circuit deriving an output voltage that is proportional to the logarithm of a dc input voltage susceptible to wide variations in amplitude includes a constant current source which forward biases a diode so that the diode operates in the exponential portion of its voltage versus current characteristic, above its saturation current. The constant current source includes first and second, cascaded feedback, dc operational amplifiers connected in negative feedback circuit. An input terminal of the first amplifier is responsive to the input voltage. A circuit shunting the first amplifier output terminal includes a resistor in series with the diode. The voltage across the resistor is sensed at the input of the second dc operational feedback amplifier. The current flowing through the resistor is proportional to the input voltage over the wide range of variations in amplitude of the input voltage.

High temperature charge amplifier for geothermal applications

DOEpatents

Lindblom, Scott C.; Maldonado, Frank J.; Henfling, Joseph A.

2015-12-08

An amplifier circuit in a multi-chip module includes a charge to voltage converter circuit, a voltage amplifier a low pass filter and a voltage to current converter. The charge to voltage converter receives a signal representing an electrical charge and generates a voltage signal proportional to the input signal. The voltage amplifier receives the voltage signal from the charge to voltage converter, then amplifies the voltage signal by the gain factor to output an amplified voltage signal. The lowpass filter passes low frequency components of the amplified voltage signal and attenuates frequency components greater than a cutoff frequency. The voltage to current converter receives the output signal of the lowpass filter and converts the output signal to a current output signal; wherein an amplifier circuit output is selectable between the output signal of the lowpass filter and the current output signal.

Wide-temperature integrated operational amplifier

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad (Inventor); Levanas, Greg (Inventor); Chen, Yuan (Inventor); Cozy, Raymond S. (Inventor); Greenwell, Robert (Inventor); Terry, Stephen (Inventor); Blalock, Benjamin J. (Inventor)

2009-01-01

The present invention relates to a reference current circuit. The reference circuit comprises a low-level current bias circuit, a voltage proportional-to-absolute temperature generator for creating a proportional-to-absolute temperature voltage (VPTAT), and a MOSFET-based constant-IC regulator circuit. The MOSFET-based constant-IC regulator circuit includes a constant-IC input and constant-IC output. The constant-IC input is electrically connected with the VPTAT generator such that the voltage proportional-to-absolute temperature is the input into the constant-IC regulator circuit. Thus the constant-IC output maintains the constant-IC ratio across any temperature range.

30 CFR 75.802 - Protection of high-voltage circuits extending underground.

Code of Federal Regulations, 2010 CFR

2010-07-01

... serve as a grounding conductor for the frames of all high-voltage equipment supplied power from that... stationary electric equipment if: (1) Such circuits are either steel armored or installed in grounded, rigid steel conduit throughout their entire length; or, (2) The voltage of such circuits is nominally 2,400...

30 CFR 75.802 - Protection of high-voltage circuits extending underground.

Code of Federal Regulations, 2011 CFR

2011-07-01

... serve as a grounding conductor for the frames of all high-voltage equipment supplied power from that... stationary electric equipment if: (1) Such circuits are either steel armored or installed in grounded, rigid steel conduit throughout their entire length; or, (2) The voltage of such circuits is nominally 2,400...

Ultra-low power high temperature and radiation hard complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) voltage reference.

PubMed

Boufouss, El Hafed; Francis, Laurent A; Kilchytska, Valeriya; Gérard, Pierre; Simon, Pascal; Flandre, Denis

2013-12-13

This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40-200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si) performed at three different temperatures (room temperature, 100 °C and 200 °C). The maximum drift of the reference voltage V(REF) depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μW at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of V(REF) and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2.

Auxiliary resonant DC tank converter

DOEpatents

Peng, Fang Z.

2000-01-01

An auxiliary resonant dc tank (ARDCT) converter is provided for achieving soft-switching in a power converter. An ARDCT circuit is coupled directly across a dc bus to the inverter to generate a resonant dc bus voltage, including upper and lower resonant capacitors connected in series as a resonant leg, first and second dc tank capacitors connected in series as a tank leg, and an auxiliary resonant circuit comprising a series combination of a resonant inductor and a pair of auxiliary switching devices. The ARDCT circuit further includes first clamping means for holding the resonant dc bus voltage to the dc tank voltage of the tank leg, and second clamping means for clamping the resonant dc bus voltage to zero during a resonant period. The ARDCT circuit resonantly brings the dc bus voltage to zero in order to provide a zero-voltage switching opportunity for the inverter, then quickly rebounds the dc bus voltage back to the dc tank voltage after the inverter changes state. The auxiliary switching devices are turned on and off under zero-current conditions. The ARDCT circuit only absorbs ripples of the inverter dc bus current, thus having less current stress. In addition, since the ARDCT circuit is coupled in parallel with the dc power supply and the inverter for merely assisting soft-switching of the inverter without participating in real dc power transmission and power conversion, malfunction and failure of the tank circuit will not affect the functional operation of the inverter; thus a highly reliable converter system is expected.

Voltage gain optimization of transmission line transformers

NASA Astrophysics Data System (ADS)

Pécastaing, L.; Reess, T.; Paillol, J.; Gibert, A.; Domens, P.

2003-06-01

Transmission Line Transformers (TLT) based on the use of ferrite beads are presented. This work aims at optimising the performance of the voltage gain and the compactness of the TLT according to the position, the type and the number of ferrites used. The ferrites have been selected taking into account two main parameters: the maximum currents flowing through the outer conductor of the lines of a TLT without ferrite beads and the current frequencies. The function of these ferrites is to decrease the effect of parasitic short-circuit transmission lines between the outer conductors of the coaxial cables of the TLT. Voltages and secondary currents are measured on each cable. The voltage gain achieved reaches the optimum theoretical value thanks to the use of ferrites for a 2, 4 and 10-stage transmission line transformer. Each cable is shorter than 1.5 meter in length which provides an unquestionable advantage of compactness.

PRECISION TIME-DELAY CIRCUIT

DOEpatents

Creveling, R.

1959-03-17

A tine-delay circuit which produces a delay time in d. The circuit a capacitor, an te back resistance, connected serially with the anode of the diode going to ground. At the start of the time delay a negative stepfunction is applied to the series circuit and initiates a half-cycle transient oscillatory voltage terminated by a transient oscillatory voltage of substantially higher frequency. The output of the delay circuit is taken at the junction of the inductor and diode where a sudden voltage rise appears after the initiation of the higher frequency transient oscillations.

Arc lamp power supply using a voltage multiplier

NASA Technical Reports Server (NTRS)

Leighty, Bradley D.

1988-01-01

A power supply is provided for an arc discharge lamp which includes a relatively low voltage high current power supply section and a high voltage starter circuit. The low voltage section includes a transformer, rectifier, variable resistor and a bank of capacitors, while the starter circuit comprises several diodes and capacitors connected as a Cockcroft-Walton multiplier. The starting circuit is effectively bypassed when the lamp arc is established and serves to automatically provide a high starting voltage to re-strike the lamp arc if the arc is extinguished by a power interruption.

Electrostatic Vibration Energy Harvester Pre-charged Wirelessly at 2.45 GHz

NASA Astrophysics Data System (ADS)

Saddi, Z.; Takhedmit, H.; Karami, A.; Basset, P.; Cirio, L.

2016-11-01

This paper reports the design, fabrication and experiments of an electrostatic vibration harvester (e-VEH), pre-charged wirelessly for the first time by using an electromagnetic waves harvester at 2.4 GHz. The rectenna uses the Cockcroft-Walton voltage doubler rectifier. It is designed and optimized to operate at low power densities and provides high voltage levels: 0.5 V at 0.5 μW/cm2 and 0.8 V at 1 μW/cm2 The e-VEH uses the Bennet doubler as conditioning circuit. Experiments show 23 V voltage across the transducer terminal when the harvester is excited at 25 Hz by 1.5 g of external acceleration. An accumulated energy of 275 μJ and a maximum power of 0.4 μW are available for the load.

High performance monolithic power management system with dynamic maximum power point tracking for microbial fuel cells.

PubMed

Erbay, Celal; Carreon-Bautista, Salvador; Sanchez-Sinencio, Edgar; Han, Arum

2014-12-02

Microbial fuel cell (MFC) that can directly generate electricity from organic waste or biomass is a promising renewable and clean technology. However, low power and low voltage output of MFCs typically do not allow directly operating most electrical applications, whether it is supplementing electricity to wastewater treatment plants or for powering autonomous wireless sensor networks. Power management systems (PMSs) can overcome this limitation by boosting the MFC output voltage and managing the power for maximum efficiency. We present a monolithic low-power-consuming PMS integrated circuit (IC) chip capable of dynamic maximum power point tracking (MPPT) to maximize the extracted power from MFCs, regardless of the power and voltage fluctuations from MFCs over time. The proposed PMS continuously detects the maximum power point (MPP) of the MFC and matches the load impedance of the PMS for maximum efficiency. The system also operates autonomously by directly drawing power from the MFC itself without any external power. The overall system efficiency, defined as the ratio between input energy from the MFC and output energy stored into the supercapacitor of the PMS, was 30%. As a demonstration, the PMS connected to a 240 mL two-chamber MFC (generating 0.4 V and 512 μW at MPP) successfully powered a wireless temperature sensor that requires a voltage of 2.5 V and consumes power of 85 mW each time it transmit the sensor data, and successfully transmitted a sensor reading every 7.5 min. The PMS also efficiently managed the power output of a lower-power producing MFC, demonstrating that the PMS works efficiently at various MFC power output level.

A programmable CCD driver circuit for multiphase CCD operation

NASA Technical Reports Server (NTRS)

Ewin, Audrey J.; Reed, Kenneth V.

1989-01-01

A programmable CCD (charge-coupled device) driver circuit was designed to drive CCDs in multiphased modes. The purpose of the drive electronics is to operate developmental CCD imaging arrays for NASA's tiltable moderate resolution imaging spectrometer (MODIS-T). Five objectives for the driver were considered during its design: (1) the circuit drives CCD electrode voltages between 0 V and +30 V to produce reasonable potential wells, (2) the driving sequence is started with one input signal, (3) the driving sequence is started with one input signal, (4) the circuit allows programming of frame sequences required by arrays of any size, (5) it produces interfacing signals for the CCD and the DTF (detector test facility). Simulation of the driver verified its function with the master clock running up to 10 MHz. This suggests a maximum rate of 400,000 pixels/s. Timing and packaging parameters were verified. The design uses 54 TTL (transistor-transistor logic) chips. Two versions of hardware were fabricated: wirewrap and printed circuit board. Both were verified functionally with a logic analyzer.

The Next Breakthrough for Organic Photovoltaics?

PubMed

Jackson, Nicholas E; Savoie, Brett M; Marks, Tobin J; Chen, Lin X; Ratner, Mark A

2015-01-02

While the intense focus on energy level tuning in organic photovoltaic materials has afforded large gains in device performance, we argue here that strategies based on microstructural/morphological control are at least as promising in any rational design strategy. In this work, a meta-analysis of ∼150 bulk heterojunction devices fabricated with different materials combinations is performed and reveals strong correlations between power conversion efficiency and morphology-dominated properties (short-circuit current, fill factor) and surprisingly weak correlations between efficiency and energy level positioning (open-circuit voltage, enthalpic offset at the interface, optical gap). While energy level positioning should in principle provide the theoretical maximum efficiency, the optimization landscape that must be navigated to reach this maximum is unforgiving. Thus, research aimed at developing understanding-based strategies for more efficient optimization of an active layer microstructure and morphology are likely to be at least as fruitful.

Effect of reduced graphene oxide on the energy harvesting performance of P(VDF-TrFE)-BaTiO3 nanocomposite devices

NASA Astrophysics Data System (ADS)

Yaqoob, Usman; Chung, Gwiy-Sang

2017-09-01

This study investigates the effect of reduced graphene oxide (rGO) on the energy harvesting performance of poly(vinylidenefluoride-trifluoroethylene)-barium titanate (P(VDF-TrFE)-BTO) nanocomposite devices. Several piezoelectric nanogenerators with different rGO contents were prepared, among them PBR5-NG (rGO = 0.5%) exhibited maximum output performance. PBR5-NG showed a maximum open circuit voltage of 8.5 Vpk-pk and short circuit current of 2 μApk-pk at an applied force of 2 N. Moreover, PBR5-NG displayed an output power of 4.5 μW at 2 MΩ load resistance. To confirm device stability, the fabricated device was subjected to several pressing-releasing cycles. The device had excellent stability, even after 1000 pressing-releasing cycles. Together, our results indicate that our fabricated PBR5-NG is a promising energy source for future flexible electronics.

Optimal Design of MPPT Controllers for Grid Connected Photovoltaic Array System

NASA Astrophysics Data System (ADS)

Ebrahim, M. A.; AbdelHadi, H. A.; Mahmoud, H. M.; Saied, E. M.; Salama, M. M.

2016-10-01

Integrating photovoltaic (PV) plants into electric power system exhibits challenges to power system dynamic performance. These challenges stem primarily from the natural characteristics of PV plants, which differ in some respects from the conventional plants. The most significant challenge is how to extract and regulate the maximum power from the sun. This paper presents the optimal design for the most commonly used Maximum Power Point Tracking (MPPT) techniques based on Proportional Integral tuned by Particle Swarm Optimization (PI-PSO). These suggested techniques are, (1) the incremental conductance, (2) perturb and observe, (3) fractional short circuit current and (4) fractional open circuit voltage techniques. This research work provides a comprehensive comparative study with the energy availability ratio from photovoltaic panels. The simulation results proved that the proposed controllers have an impressive tracking response. The system dynamic performance improved greatly using the proposed controllers.

Module Five: Relationships of Current, Voltage, and Resistance; Basic Electricity and Electronics Individualized Learning System.

ERIC Educational Resources Information Center

Bureau of Naval Personnel, Washington, DC.

This module covers the relationships between current and voltage; resistance in a series circuit; how to determine the values of current, voltage, resistance, and power in resistive series circuits; the effects of source internal resistance; and an introduction to the troubleshooting of series circuits. This module is divided into five lessons:…

Investigating the Effect of Titanium Dioxide (TiO2) Pollution on the Performance of the Mono-crystalline Solar Module

NASA Astrophysics Data System (ADS)

Ahmed Darwish, Zeki; Sopian, K.; Kazem, Hussein A.; Alghoul, M. A.; Alawadhi, Hussain

2017-11-01

This paper presents a study of titanium oxide TiO2 as one of the components of dust pollution affecting the PV performance. This pollutant can be found in various quantities in different locations around the world. The production of energy by different types of photovoltaic systems is very sensitive and depends on various environmental factors. Dust is one of the main contributing factors, yet the type of the dust is often neglected when studying the behaviour of the solar panel. In this experimental work we have studied the performance of the monocrystalline solar module as affected by the density of TiO2. The reduction of the PV module power caused by titanium dioxide under various mass densities was investigated. The results showed that the TiO2 has a significant effect on the PV output power. The dust density varied between 0-125 g.m-2. The corresponding reduction of the PV output power increased from 0 to 86.7%. This is based on various influencing parameters such as: short circuit current (Isc), maximum current (Im), open circuit voltage (Voc), maximum voltage (Vm), maximum power (Pm) and efficiency (E). Two functions are proposed as a mathematical model in order to explain this behaviour, namely the exponential and Fourier functions. The coefficients of all general models are valid for this type of dust with a density value ranging from 0-125 g.m-2.

Influence of MoOx interlayer on the maximum achievable open-circuit voltage in organic photovoltaic cells

NASA Astrophysics Data System (ADS)

Zou, Yunlong; Holmes, Russell

2013-03-01

Transition metal oxides including molybdenum oxide (MoOx) are characterized by large work functions and deep energy levels relative to the organic semiconductors used in photovoltaic cells (OPVs). These materials have been used in OPVs as interlayers between the indium-tin-oxide anode and the active layers to increase the open-circuit voltage (VOC) and power conversion efficiency. We examine the role of MoOx in determining the maximum achievable VOC in planar heterojunction OPVs based on the donor-acceptor pairing of boron subphthalocyanine chloride (SubPc) and C60. While causing minor changes in VOC at room temperature, the inclusion of MoOx significantly changes the temperature dependence of VOC. Devices containing no interlayer show a maximum VOC\\ of 1.2 V, while devices containing MoOx show no saturation in VOC, reaching a value of >1.4 V at 110 K. We propose that the MoOx-SubPc interface forms a dissociating Schottky junction that provides an additional contribution to VOC at low temperature. Separate measurements of photoluminescence confirm that excitons in SubPc can be quenched by MoOx. Charge transfer at this interface is by hole extraction from SubPc to MoOx, and this mechanism favors donors with a deep highest occupied molecular orbital (HOMO) energy level. Consistent with this expectation, the temperature dependence of VOC for devices constructed using a donor with a shallower HOMO level, e.g. copper phthalocyanine, is independent of the presence of MoOx.

Evaluation of the ruggedness of power DMOS transistor from electro-thermal simulation of UIS behaviour

NASA Astrophysics Data System (ADS)

Donoval, Daniel; Vrbicky, Andrej; Marek, Juraj; Chvala, Ales; Beno, Peter

2008-06-01

High-voltage power MOSFETs have been widely used in switching mode power supply circuits as output drivers for industrial and automotive electronic control systems. However, as the device size is reduced, the energy handling capability is becoming a very important issue to be addressed together with the trade-off between the series on-resistance RON and breakdown voltage VBR. Unclamped inductive switching (UIS) condition represents the circuit switching operation for evaluating the "ruggedness", which characterizes the device capability to handle high avalanche currents during the applied stress. In this paper we present an experimental method which modifies the standard UIS test and allows extraction of the maximum device temperature after the applied standard stress pulse vanishes. Corresponding analysis and non-destructive prediction of the ruggedness of power DMOSFETs devices supported by advanced 2-D mixed mode electro-thermal device and circuit simulation under UIS conditions using calibrated physical models is provided also. The results of numerical simulation are in a very good correlation with experimental characteristics and contribute to their physical interpretation by identification of the mechanism of heat generation and heat source location and continuous temperature extraction.

Apparatus for Controlling Low Power Voltages in Space Based Processing Systems

NASA Technical Reports Server (NTRS)

Petrick, David J. (Inventor)

2017-01-01

A low power voltage control circuit for use in space missions includes a switching device coupled between an input voltage and an output voltage. The switching device includes a control input coupled to an enable signal, wherein the control input is configured to selectively turn the output voltage on or off based at least in part on the enable signal. A current monitoring circuit is coupled to the output voltage and configured to produce a trip signal, wherein the trip signal is active when a load current flowing through the switching device is determined to exceed a predetermined threshold and is inactive otherwise. The power voltage control circuit is constructed of space qualified components.

Design of a 0.13 µm SiGe Limiting Amplifier with 14.6 THz Gain-Bandwidth-Product

NASA Astrophysics Data System (ADS)

Park, Sehoon; Du, Xuan-Quang; Grözing, Markus; Berroth, Manfred

2017-09-01

This paper presents the design of a limiting amplifier with 1-to-3 fan-out implementation in a 0.13 µm SiGe BiCMOS technology and gives a detailed guideline to determine the circuit parameters of the amplifier for optimum high-frequency performance based on simplified gain estimations. The proposed design uses a Cherry-Hooper topology for bandwidth enhancement and is optimized for maximum group delay flatness to minimize phase distortion of the input signal. With regard to a high integration density and a small chip area, the design employs no passive inductors which might be used to boost the circuit bandwidth with inductive peaking. On a RLC-extracted post-layout simulation level, the limiting amplifier exhibits a gain-bandwidth-product of 14.6 THz with 56.6 dB voltage gain and 21.5 GHz 3 dB bandwidth at a peak-to-peak input voltage of 1.5 mV. The group delay variation within the 3 dB bandwidth is less than 0.5 ps and the power dissipation at a power supply voltage of 3 V including output drivers is 837 mW.

Charge regulation circuit

DOEpatents

Ball, Don G.

1992-01-01

A charge regulation circuit provides regulation of an unregulated voltage supply in the range of 0.01%. The charge regulation circuit is utilized in a preferred embodiment in providing regulated voltage for controlling the operation of a laser.

A study on stimulation of DC high voltage power of LCC series parallel resonant in projectile velocity measurement system

NASA Astrophysics Data System (ADS)

Lu, Dong-dong; Gu, Jin-liang; Luo, Hong-e.; Xia, Yan

2017-10-01

According to specific requirements of the X-ray machine system for measuring velocity of outfield projectile, a DC high voltage power supply system is designed for the high voltage or the smaller current. The system comprises: a series resonant circuit is selected as a full-bridge inverter circuit; a high-frequency zero-current soft switching of a high-voltage power supply is realized by PWM output by STM32; a nanocrystalline alloy transformer is chosen as a high-frequency booster transformer; and the related parameters of an LCC series-parallel resonant are determined according to the preset parameters of the transformer. The concrete method includes: a LCC series parallel resonant circuit and a voltage doubling circuit are stimulated by using MULTISM and MATLAB; selecting an optimal solution and an optimal parameter of all parts after stimulation analysis; and finally verifying the correctness of the parameter by stimulation of the whole system. Through stimulation analysis, the output voltage of the series-parallel resonant circuit gets to 10KV in 28s: then passing through the voltage doubling circuit, the output voltage gets to 120KV in one hour. According to the system, the wave range of the output voltage is so small as to provide the stable X-ray supply for the X-ray machine for measuring velocity of outfield projectile. It is fast in charging and high in efficiency.

Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits

NASA Astrophysics Data System (ADS)

Petti, Luisa; Pattanasattayavong, Pichaya; Lin, Yen-Hung; Münzenrieder, Niko; Cantarella, Giuseppe; Yaacobi-Gross, Nir; Yan, Feng; Tröster, Gerhard; Anthopoulos, Thomas D.

2017-03-01

We report on low operating voltage thin-film transistors (TFTs) and integrated inverters based on copper(I) thiocyanate (CuSCN) layers processed from solution at low temperature on free-standing plastic foils. As-fabricated coplanar bottom-gate and staggered top-gate TFTs exhibit hole-transporting characteristics with average mobility values of 0.0016 cm2 V-1 s-1 and 0.013 cm2 V-1 s-1, respectively, current on/off ratio in the range 102-104, and maximum operating voltages between -3.5 and -10 V, depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as -3.5 V. Importantly, discrete CuSCN transistors and integrated logic inverters remain fully functional even when mechanically bent to a tensile radius of 4 mm, demonstrating the potential of the technology for flexible electronics.

Investigation of reliability attributes and accelerated stress factors of terrestrial solar cells. First annual report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prince, J.L.; Lathrop, J.W.

1979-05-01

The results of accelerated stress testing of four different types of silicon terrestrial solar cells are discussed. The accelerated stress tests used included bias-temperature tests, bias-temperature-humidity tests, thermal cycle and thermal shock tests, and power cycle tests. Characterization of the cells was performed before stress testing and at periodic down-times, using electrical measurement, visual inspection, and metal adherence pull tests. Electrical parameters measured included short-circuit current, I/sub sc/, open circuit voltage, V/sub oc/, and output power, voltage, and current at the maximum power point, P/sub m/, V/sub m/, and I/sub m/ respectively. Incorporated in the report are the distributions ofmore » the prestress electrical data for all cell types. Data was also obtained on cell series and shunt resistance. Significant differences in the response to the various stress tests was observed between cell types. On the basis of the experience gained in this research work, a suggested Reliability Qualification Test Schedule was developed.« less

Measurement and simulation of thermoelectric efficiency for single leg

NASA Astrophysics Data System (ADS)

Hu, Xiaokai; Yamamoto, Atsushi; Ohta, Michihiro; Nishiate, Hirotaka

2015-04-01

Thermoelectric efficiency measurements were carried out on n-type bismuth telluride legs with the hot-side temperature at 100 and 150 °C. The electric power and heat flow were measured individually. Water coolant was utilized to maintain the cold-side temperature and to measure heat flow out of the cold side. Leg length and vacuum pressure were studied in terms of temperature difference across the leg, open-circuit voltage, internal resistance, and heat flow. Finite-element simulation on thermoelectric generation was performed in COMSOL Multiphysics, by inputting two-side temperatures and thermoelectric material properties. The open-circuit voltage and resistance were in good agreement between the measurement and simulation. Much larger heat flows were found in measurements, since they were comprised of conductive, convective, and radiative contributions. Parasitic heat flow was measured in the absence of bismuth telluride leg, and the conductive heat flow was then available. Finally, the maximum thermoelectric efficiency was derived in accordance with the electric power and the conductive heat flow.

Series resonance inverter with triggered vacuum gaps

NASA Astrophysics Data System (ADS)

Damstra, Geert C.; Zhang, X.

1994-05-01

Series resonance inverters based on semi-conductor switching elements are well-known and have a wide range of application, mainly for lower voltages. For high voltage application many switching elements have to be put in series to obtain sufficient blocking voltage. Voltage grinding and multiple gate control elements are needed. There is much experience with the triggered vacuum gaps as high voltage/high current single shot elements, for example in reignition circuits for synthetic circuit breaker tests. These elements have a blocking voltage of 50 - 100 kV and are triggerable by a light fiber control device. A prototype inverter has been developed that generates 0.1 Hz, 30 kV AC voltages with a flat top for tests on cables and capacitors of many micro farads fed from a low voltage supply of about 600 V. Only two TVG elements are needed to switch the resonant circuit alternatively on the positive or negative supply. The resonant circuit itself consists of the capacitance of the testobject and a high quality inductor that determines the frequency and the peak current of the voltage reversing process.

30 CFR 77.900-2 - Testing, examination, and maintenance of circuit breakers; record.

Code of Federal Regulations, 2011 CFR

2011-07-01

... protecting low- and medium-voltage circuits serving three-phase alternating current equipment and such record... AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits...

30 CFR 77.900-1 - Testing, examination, and maintenance of circuit breakers; procedures.

Code of Federal Regulations, 2011 CFR

2011-07-01

... protecting low- and medium-voltage circuits serving portable or mobile three-phase alternating current... AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits...

30 CFR 77.900-2 - Testing, examination, and maintenance of circuit breakers; record.

Code of Federal Regulations, 2010 CFR

2010-07-01

... protecting low- and medium-voltage circuits serving three-phase alternating current equipment and such record... AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits...

30 CFR 77.900-1 - Testing, examination, and maintenance of circuit breakers; procedures.

Code of Federal Regulations, 2010 CFR

2010-07-01

... protecting low- and medium-voltage circuits serving portable or mobile three-phase alternating current... AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits...

Voltage-Boosting Driver For Switching Regulator

NASA Technical Reports Server (NTRS)

Trump, Ronald C.

1990-01-01

Driver circuit assures availability of 10- to 15-V gate-to-source voltage needed to turn on n-channel metal oxide/semiconductor field-effect transistor (MOSFET) acting as switch in switching voltage regulator. Includes voltage-boosting circuit efficiently providing gate voltage 10 to 15 V above supply voltage. Contains no exotic parts and does not require additional power supply. Consists of NAND gate and dual voltage booster operating in conjunction with pulse-width modulator part of regulator.

30 CFR 77.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Fail safe ground check circuits on high-voltage... WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.803 Fail safe ground check..., resistance grounded systems shall include a fail safe ground check circuit or other no less effective device...

30 CFR 77.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Fail safe ground check circuits on high-voltage... WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.803 Fail safe ground check..., resistance grounded systems shall include a fail safe ground check circuit or other no less effective device...

30 CFR 77.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Fail safe ground check circuits on high-voltage... WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.803 Fail safe ground check..., resistance grounded systems shall include a fail safe ground check circuit or other no less effective device...

30 CFR 77.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Fail safe ground check circuits on high-voltage... WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.803 Fail safe ground check..., resistance grounded systems shall include a fail safe ground check circuit or other no less effective device...

Physical mechanisms for reduction of the breakdown voltage in the circuit of a rod lightning protector with an opening microswitch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bobrov, Yu. K.; Zhuravkov, I. V.; Ostapenko, E. I.

2010-12-15

The effect of air gap breakdown voltage reduction in the circuit with an opening microswitch is substantiated from the physical point of view. This effect can be used to increase the efficiency of lightning protection system with a rod lightning protector. The processes which take place in the electric circuit of a lightning protector with a microswitch during a voltage breakdown are investigated. Openings of the microswitch are shown to lead to resonance overvoltages in the dc circuit and, as a result, efficient reduction in the breakdown voltage in a lightning protector-thundercloud air gap.

Hybrid circuit achieves pulse regeneration with low power drain

NASA Technical Reports Server (NTRS)

Cancro, C. A.

1965-01-01

Hybrid tunnel diode-transistor circuit provides a solid-state, low power drain pulse regenerator, frequency limiter, or gated oscillator. When the feedback voltage exceeds the input voltage, the circuit functions as a pulse normalizer or a frequency limiter. If the circuit is direct coupled, it functions as a gated oscillator.

High voltage MOSFET switching circuit

DOEpatents

McEwan, Thomas E.

1994-01-01

The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

Cable coupling lightning transient qualification

NASA Technical Reports Server (NTRS)

Cook, M.

1989-01-01

Simulated lightning strike testing of instrumentation cabling on the redesigned solid rocket motor was performed. Testing consisted of subjecting the lightning evaluation test article to simulated lightning strikes and evaluating the effects of instrumentation cable transients on cables within the system tunnel. The maximum short-circuit current induced onto a United Space Boosters, Inc., operational flight cable within the systems tunnel was 92 A, and the maximum induced open-circuit voltage was 316 V. These levels were extrapolated to the worst-case (200 kA) condition of NASA specification NSTS 07636 and were also scaled to full-scale redesigned solid rocket motor dimensions. Testing showed that voltage coupling to cables within the systems tunnel can be reduced 40 to 90 dB and that current coupling to cables within the systems tunnel can be reduced 30 to 70 dB with the use of braided metallic sock shields around cables that are external to the systems tunnel. Testing also showed that current and voltage levels induced onto cables within the systems tunnel are partially dependant on the cables' relative locations within the systems tunnel. Results of current injections to the systems tunnel indicate that the dominant coupling mode on cables within the systems tunnel is not from instrumentation cables but from coupling through the systems tunnel cover seam apertures. It is recommended that methods of improving the electrical bonding between individual sections of the systems tunnel covers be evaluated. Further testing to better characterize redesigned solid rocket motor cable coupling effects as an aid in developing methods to reduce coupling levels, particularly with respect to cable placement within the systems tunnel, is also recommended.

Surge Protection in Low-Voltage AC Power Circuits: An Anthology

NASA Astrophysics Data System (ADS)

Martzloff, F. D.

2002-10-01

The papers included in this part of the Anthology provide basic information on the propagation of surges in low-voltage AC power circuits. The subject was approached by a combination of experiments and theoretical considerations. One important distinction is made between voltage surges and current surges. Historically, voltage surges were the initial concern. After the introduction and widespread use of current-diverting surge-protective devices at the point-of-use, the propagation of current surges became a significant factor. The papers included in this part reflect this dual dichotomy of voltage versus current and impedance mismatch effects versus simple circuit theory.

AC to DC Bridgeless Boost Converter for Ultra Low Input Energy Harvesting

NASA Astrophysics Data System (ADS)

Dawam, A. H. A.; Muhamad, M.

2018-03-01

This paper presents design of circuit which converts low input AC voltage to a higher output DC voltage. A buck-boost topology and boost topology are combined to condition cycle of an AC input voltage. the unique integration of a combining circuit of buck-boost and boost circuit have been proposed in order to introduce a new direct ac-dc power converter topology without conventional diode bridge rectifier. The converter achieved to convert a milli-volt scale of input AC voltage into a volt scale of output DC voltages which is from 400mV to 3.3V.

Static DC to DC Power Conditioning-Active Ripple Filter, 1 MHZ DC to DC Conversion, and Nonlinear Analysis. Ph.D. Thesis; [voltage regulation and conversion circuitry for spacecraft power supplies

NASA Technical Reports Server (NTRS)

Sander, W. A., III

1973-01-01

Dc to dc static power conditioning systems on unmanned spacecraft have as their inputs highly fluctuating dc voltages which they condition to regulated dc voltages. These input voltages may be less than or greater than the desired regulated voltages. The design of two circuits which address specific problems in the design of these power conditioning systems and a nonlinear analysis of one of the circuits are discussed. The first circuit design is for a nondissipative active ripple filter which uses an operational amplifier to amplify and cancel the sensed ripple voltage. A dc to dc converter operating at a switching frequency of 1 MHz is the second circuit discussed. A nonlinear analysis of the type of dc to dc converter utilized in designing the 1 MHz converter is included.

Symmetric voltage-controlled variable resistance

NASA Technical Reports Server (NTRS)

Vanelli, J. C.

1978-01-01

Feedback network makes resistance of field-effect transistor (FET) same for current flowing in either direction. It combines control voltage with source and load voltages to give symmetric current/voltage characteristics. Since circuit produces same magnitude output voltage for current flowing in either direction, it introduces no offset in presense of altering polarity signals. It is therefore ideal for sensor and effector circuits in servocontrol systems.

A read-in IC for infrared scene projectors with voltage drop compensation for improved uniformity of emitter current

NASA Astrophysics Data System (ADS)

Cho, Min Ji; Shin, Uisub; Lee, Hee Chul

2017-05-01

This paper proposes a read-in integrated circuit (RIIC) for infrared scene projectors, which compensates for the voltage drops in ground lines in order to improve the uniformity of the emitter current. A current output digital-to-analog converter is utilized to convert digital scene data into scene data currents. The unit cells in the array receive the scene data current and convert it into data voltage, which simultaneously self-adjusts to account for the voltage drop in the ground line in order to generate the desired emitter current independently of variations in the ground voltage. A 32 × 32 RIIC unit cell array was designed and fabricated using a 0.18-μm CMOS process. The experimental results demonstrate that the proposed RIIC can output a maximum emitter current of 150 μA and compensate for a voltage drop in the ground line of up to 500 mV under a 3.3-V supply. The uniformity of the emitter current is significantly improved compared to that of a conventional RIIC.

Soft switching resonant converter with duty-cycle control in DC micro-grid system

NASA Astrophysics Data System (ADS)

Lin, Bor-Ren

2018-01-01

Resonant converter has been widely used for the benefits of low switching losses and high circuit efficiency. However, the wide frequency variation is the main drawback of resonant converter. This paper studies a new modular resonant converter with duty-cycle control to overcome this problem and realise the advantages of low switching losses, no reverse recovery current loss, balance input split voltages and constant frequency operation for medium voltage direct currentgrid or system network. Series full-bridge (FB) converters are used in the studied circuit in order to reduce the voltage stresses and power rating on power semiconductors. Flying capacitor is used between two FB converters to balance input split voltages. Two circuit modules are paralleled on the secondary side to lessen the current rating of rectifier diodes and the size of magnetic components. The resonant tank is operated at inductive load circuit to help power switches to be turned on at zero voltage with wide load range. The pulse-width modulation scheme is used to regulate output voltage. Experimental verifications are provided to show the performance of the proposed circuit.

30 CFR 77.900 - Low- and medium-voltage circuits serving portable or mobile three-phase alternating current...

Code of Federal Regulations, 2011 CFR

2011-07-01

... portable or mobile three-phase alternating current equipment; circuit breakers. 77.900 Section 77.900... mobile three-phase alternating current equipment; circuit breakers. Low- and medium-voltage circuits supplying power to portable or mobile three-phase alternating current equipment shall be protected by...

Module Twelve: Series AC Resistive-Reactive Circuits; Basic Electricity and Electronics Individualized Learning System.

ERIC Educational Resources Information Center

Bureau of Naval Personnel, Washington, DC.

The module covers series circuits which contain both resistive and reactive components and methods of solving these circuits for current, voltage, impedance, and phase angle. The module is divided into six lessons: voltage and impedance in AC (alternating current) series circuits, vector computations, rectangular and polar notation, variational…

High voltage MOSFET switching circuit

DOEpatents

McEwan, T.E.

1994-07-26

The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET. 2 figs.

Thermally-induced voltage alteration for integrated circuit analysis

DOEpatents

Cole, Jr., Edward I.

2000-01-01

A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing an integrated circuit (IC) either from a device side of the IC or through the IC substrate to locate any open-circuit or short-circuit defects therein. The TIVA apparatus uses constant-current biasing of the IC while scanning a focused laser beam over electrical conductors (i.e. a patterned metallization) in the IC to produce localized heating of the conductors. This localized heating produces a thermoelectric potential due to the Seebeck effect in any conductors with open-circuit defects and a resistance change in any conductors with short-circuit defects, both of which alter the power demand by the IC and thereby change the voltage of a source or power supply providing the constant-current biasing. By measuring the change in the supply voltage and the position of the focused and scanned laser beam over time, any open-circuit or short-circuit defects in the IC can be located and imaged. The TIVA apparatus can be formed in part from a scanning optical microscope, and has applications for qualification testing or failure analysis of ICs.

Research on Experiment of Islanding Protection Device of Grid-connected Photovoltaic System Based on RTDS

NASA Astrophysics Data System (ADS)

Zhou, Ning; Yang, Jia; Cheng, Zheng; Chen, Bo; Su, Yong Chun; Shu, Zhan; Zou, Jin

2017-06-01

Solar photovoltaic power generation is the power generation using solar cell module converting sunlight into DC electric energy. In the paper an equivalent model of solar photovoltaic power generation system is built in RTDS. The main circuit structure of the two-stage PV grid-connected system consists of the DC-DC, DC-AC circuit. The MPPT (Maximum Power Point Tracking) control of the PV array is controlled by adjusting the duty ratio of the DC-DC circuit. The proposed control strategy of constant voltage/constant reactive power (V/Q) control is successfully implemented grid-connected control of the inverter when grid-connected operation. The closed-loop experiment of islanding protection device of photovoltaic power plant on RTDS, verifies the correctness of the simulation model, and the experimental verification can be applied to this type of device.

30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. [Statutory Provision] No electrical work shall be performed on low-, medium-, or high-voltage...

30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. [Statutory Provision] No electrical work shall be performed on low-, medium-, or high-voltage...

30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. [Statutory Provision] No electrical work shall be performed on low-, medium-, or high-voltage...

30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. [Statutory Provision] No electrical work shall be performed on low-, medium-, or high-voltage...

30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. [Statutory Provision] No electrical work shall be performed on low-, medium-, or high-voltage...

60 V tolerance full symmetrical switch for battery monitor IC

NASA Astrophysics Data System (ADS)

Zhang, Qidong; Yang, Yintang; Chai, Changchun

2017-06-01

For stacked battery monitoring IC high speed and high precision voltage acquisition requirements, this paper introduces a kind of symmetrical type high voltage switch circuit. This kind of switch circuit uses the voltage following structure, which eliminates the leakage path of input signals. At the same time, this circuit adopts a high speed charge pump structure, in any case the input signal voltage is higher than the supply voltage, it can fast and accurately turn on high voltage MOS devices, and convert the battery voltage to an analog to digital converter. The proposed high voltage full symmetry switch has been implemented in a 0.18 μm BCD process; simulated and measured results show that the proposed switch can always work properly regardless of the polarity of the voltage difference between the input signal ports and an input signal higher than the power supply. Project supported by the National Natural Science Foundation of China (No. 61334003).

Triboelectric Nanogenerator Using Lithium Niobate Thin Film

NASA Astrophysics Data System (ADS)

Geng, Juan; Zhang, Xinzheng; Kong, Yongfa; Xu, Jingjun

2017-06-01

We present a triboelectric nanogenerator (TENG) using a lithium niobate thin film, as one of the triboelectric pairs which was grown on a silicon substrate by laser molecule beam epitaxy (LMBE). The designed TENG has the advantages of simple structure, easy fabrication, small size (1.1*1.0*0.15 cm3). An open-circuit voltage of 136 V and a short-circuit current of 8.40 μA have been achieved. The maximum output power is 307.5μW under the load resistance of 10MΩ. This is the first time to use lithium niobate thin film as one of the friction pair, which may make it possible to expand the application of triboelectric nanogenerator to optical field.

A systematic method of interconnection optimization for dense-array concentrator photovoltaic system.

PubMed

Siaw, Fei-Lu; Chong, Kok-Keong

2013-01-01

This paper presents a new systematic approach to analyze all possible array configurations in order to determine the most optimal dense-array configuration for concentrator photovoltaic (CPV) systems. The proposed method is fast, simple, reasonably accurate, and very useful as a preliminary study before constructing a dense-array CPV panel. Using measured flux distribution data, each CPV cells' voltage and current values at three critical points which are at short-circuit, open-circuit, and maximum power point are determined. From there, an algorithm groups the cells into basic modules. The next step is I-V curve prediction, to find the maximum output power of each array configuration. As a case study, twenty different I-V predictions are made for a prototype of nonimaging planar concentrator, and the array configuration that yields the highest output power is determined. The result is then verified by assembling and testing of an actual dense-array on the prototype. It was found that the I-V curve closely resembles simulated I-V prediction, and measured maximum output power varies by only 1.34%.

A Systematic Method of Interconnection Optimization for Dense-Array Concentrator Photovoltaic System

PubMed Central

Siaw, Fei-Lu

2013-01-01

This paper presents a new systematic approach to analyze all possible array configurations in order to determine the most optimal dense-array configuration for concentrator photovoltaic (CPV) systems. The proposed method is fast, simple, reasonably accurate, and very useful as a preliminary study before constructing a dense-array CPV panel. Using measured flux distribution data, each CPV cells' voltage and current values at three critical points which are at short-circuit, open-circuit, and maximum power point are determined. From there, an algorithm groups the cells into basic modules. The next step is I-V curve prediction, to find the maximum output power of each array configuration. As a case study, twenty different I-V predictions are made for a prototype of nonimaging planar concentrator, and the array configuration that yields the highest output power is determined. The result is then verified by assembling and testing of an actual dense-array on the prototype. It was found that the I-V curve closely resembles simulated I-V prediction, and measured maximum output power varies by only 1.34%. PMID:24453823

High frequency capacitor-diode voltage multiplier dc-dc converter development

NASA Technical Reports Server (NTRS)

Kisch, J. J.; Martinelli, R. M.

1977-01-01

A power conditioner was developed which used a capacitor diode voltage multiplier to provide a high voltage without the use of a step-up transformer. The power conditioner delivered 1200 Vdc at 100 watts and was operated from a 120 Vdc line. The efficiency was in excess of 90 percent. The component weight was 197 grams. A modified boost-add circuit was used for the regulation. A short circuit protection circuit was used which turns off the drive circuit upon a fault condition, and recovers within 5 ms after removal of the short. High energy density polysulfone capacitors and high speed diodes were used in the multiplier circuit.

A new AC driving circuit for a top emission AMOLED

NASA Astrophysics Data System (ADS)

Yongwen, Zhang; Wenbin, Chen; Haohan, Liu

2013-05-01

A new voltage programmed pixel circuit with top emission design for active-matrix organic light-emitting diode (AMOLED) displays is presented and verified by HSPICE simulations. The proposed pixel circuit consists of five poly-Si TFTs, and can effectively compensate for the threshold voltage variation of the driving TFT. Meanwhile, the proposed pixel circuit offers an AC driving mode for the OLED by the two adjacent pulse voltage sources, which can suppress the degradation of the OLED. Moreover, a high contrast ratio can be achieved by the proposed pixel circuit since the OLED does not emit any light except for the emission period.

46 CFR 111.05-1 - Purpose.

Code of Federal Regulations, 2011 CFR

2011-10-01

... requirements for the grounding of electric systems, circuits, and equipment. Note: Circuits are grounded to limit excessive voltage from lightning, transient surges, and unintentional contact with higher voltage lines, and to limit the voltage to ground during normal operation. Conductive materials enclosing...

46 CFR 111.05-1 - Purpose.

Code of Federal Regulations, 2010 CFR

2010-10-01

... requirements for the grounding of electric systems, circuits, and equipment. Note: Circuits are grounded to limit excessive voltage from lightning, transient surges, and unintentional contact with higher voltage lines, and to limit the voltage to ground during normal operation. Conductive materials enclosing...

46 CFR 111.05-1 - Purpose.

Code of Federal Regulations, 2012 CFR

2012-10-01

... requirements for the grounding of electric systems, circuits, and equipment. Note: Circuits are grounded to limit excessive voltage from lightning, transient surges, and unintentional contact with higher voltage lines, and to limit the voltage to ground during normal operation. Conductive materials enclosing...

46 CFR 111.05-1 - Purpose.

Code of Federal Regulations, 2014 CFR

2014-10-01

... requirements for the grounding of electric systems, circuits, and equipment. Note: Circuits are grounded to limit excessive voltage from lightning, transient surges, and unintentional contact with higher voltage lines, and to limit the voltage to ground during normal operation. Conductive materials enclosing...

46 CFR 111.05-1 - Purpose.

Code of Federal Regulations, 2013 CFR

2013-10-01

... requirements for the grounding of electric systems, circuits, and equipment. Note: Circuits are grounded to limit excessive voltage from lightning, transient surges, and unintentional contact with higher voltage lines, and to limit the voltage to ground during normal operation. Conductive materials enclosing...

A Single Phase 7-Level Cascade Inverter Topology with Reduced Number of Switches on Resistive Load by Using PWM

NASA Astrophysics Data System (ADS)

Hamzah, H. H.; Ponniran, A.; Kasiran, A. N.; Harimon, M. A.; Gendum, D. A.; Yatim, M. H.

2018-04-01

This paper discussing design principles of inverter structure with reduced number of semiconductor devices of seven levels symmetric H-bridge multilevel inverter (MLI) topology. The aim of this paper is to design an inverter circuit with reduction of semiconductor losses, converter size and development cost. The H-bridge and auxiliary structures were considered in order to achieve seven levels output voltage. The performance of design circuit is compared with conventional seven levels structure in terms of voltage output. The circuit development consists of seven switches and three diode. A basic modulation technique is used to confirm the designed circuit. The results show that the designed circuit is able to convert seven level output voltage with low total harmonics distortion (THD) in voltage fundamental output. According to the results, fundamental output voltage is increased up to 8.314%, and the THD is decreased up to 0.81% compared to the conventional seven level inverter.

A compact, low jitter, nanosecond rise time, high voltage pulse generator with variable amplitude.

PubMed

Mao, Jiubing; Wang, Xin; Tang, Dan; Lv, Huayi; Li, Chengxin; Shao, Yanhua; Qin, Lan

2012-07-01

In this paper, a compact, low jitter, nanosecond rise time, command triggered, high peak power, gas-switch pulse generator system is developed for high energy physics experiment. The main components of the system are a high voltage capacitor, the spark gap switch and R = 50 Ω load resistance built into a structure to obtain a fast high power pulse. The pulse drive unit, comprised of a vacuum planar triode and a stack of avalanche transistors, is command triggered by a single or multiple TTL (transistor-transistor logic) level pulses generated by a trigger pulse control unit implemented using the 555 timer circuit. The control unit also accepts user input TTL trigger signal. The vacuum planar triode in the pulse driving unit that close the first stage switches is applied to drive the spark gap reducing jitter. By adjusting the charge voltage of a high voltage capacitor charging power supply, the pulse amplitude varies from 5 kV to 10 kV, with a rise time of <3 ns and the maximum peak current up to 200 A (into 50 Ω). The jitter of the pulse generator system is less than 1 ns. The maximum pulse repetition rate is set at 10 Hz that limited only by the gas-switch and available capacitor recovery time.

High-voltage crowbar circuit with cascade-triggered series ignitrons

DOEpatents

Baker, William R. [Orinda, CA

1980-11-04

A series string of ignitrons for switching a large current at high voltage to ground. Switching is initiated by means of a negative trigger pulse applied to the cathode of the lowest voltage level ignitron next to ground to draw ground current through diodes in the ignitor circuit. The trigger pulse is applied thereby to the next higher ignitron cathode and sequentially to the remainder of the ignitrons in the string through diodes in respective ignitor circuits. Full line voltage is held off of nonconducting diodes and ignitrons by means of varistors.

High-voltage crowbar circuit with cascade-triggered series ignitrons

DOEpatents

Baker, W.R.

A series string of ignitrons for switching a large current at high voltage to ground is discussed. Switching is initiated by means of a negative trigger pulse applied to the cathode of the lowest voltage level ignitron next to ground to draw ground current through diodes in the ignitor circuit. The trigger pulse is applied thereby to the next higher ignitron cathode and sequentially to the remainder of the ignitrons in the string through diodes in respective ignitor circuits. Full line voltage is held off of nonconducting diodes and ignitrons by means of varistors.

High-voltage crowbar circuit with cascade-triggered series ignitrons

DOEpatents

Baker, W.R.

1980-11-04

A series string of ignitrons for switching a large current at high voltage to ground. Switching is initiated by means of a negative trigger pulse applied to the cathode of the lowest voltage level ignitron next to ground to draw ground current through diodes in the ignitor circuit. The trigger pulse is applied thereby to the next higher ignitron cathode and sequentially to the remainder of the ignitrons in the string through diodes in respective ignitor circuits. Full line voltage is held off of nonconducting diodes and ignitrons by means of varistors. 1 fig.

Electrochemically controlled charging circuit for storage batteries

DOEpatents

Onstott, E.I.

1980-06-24

An electrochemically controlled charging circuit for charging storage batteries is disclosed. The embodiments disclosed utilize dc amplification of battery control current to minimize total energy expended for charging storage batteries to a preset voltage level. The circuits allow for selection of Zener diodes having a wide range of reference voltage levels. Also, the preset voltage level to which the storage batteries are charged can be varied over a wide range.

Direct current ballast circuit for metal halide lamp

NASA Technical Reports Server (NTRS)

Lutus, P. (Inventor)

1981-01-01

A direct current ballast circuit for a two electrode metal halide lamp is described. Said direct current ballast circuit includes a low voltage DC input and a high frequency power amplifier and power transformer for developing a high voltage output. The output voltage is rectified by diodes and filtered by inductor and capacitor to provide a regulated DC output through commutating diodes to one terminal of the lamp at the output terminal. A feedback path from the output of the filter capacitor through the bias resistor to power the high frequency circuit which includes the power amplifier and the power transformer for sustaining circuit operations during low voltage transients on the input DC supply is described. A current sensor connected to the output of the lamp through terminal for stabilizing lamp current following breakdown of the lamp is described.

Laser beam apparatus and method for analyzing solar cells

DOEpatents

Staebler, David L.

1980-01-01

A laser beam apparatus and method for analyzing, inter alia, the current versus voltage curve at the point of illumination on a solar cell and the open circuit voltage of a solar cell. The apparatus incorporates a lock-in amplifier, and a laser beam light chopper which permits the measurement of the AC current of the solar cell at an applied DC voltage at the position on the solar cell where the cell is illuminated and a feedback scheme which permits the direct scanning measurements of the open circuit voltage. The accuracy of the measurement is a function of the intensity and wavelength of the laser light with respect to the intensity and wavelength distribution of sunlight and the percentage the dark current is at the open circuit voltage to the short circuit current of the solar cell.

Fabrication of multijunction high voltage concentrator solar cells by integrated circuit technology

NASA Technical Reports Server (NTRS)

Valco, G. J.; Kapoor, V. J.; Evans, J. C., Jr.; Chai, A.-T.

1981-01-01

Standard integrated circuit technology has been developed for the design and fabrication of planar multijunction (PMJ) solar cell chips. Each 1 cm x 1 cm solar chip consisted of six n(+)/p, back contacted, internally series interconnected unit cells. These high open circuit voltage solar cells were fabricated on 2 ohm-cm, p-type 75 microns thick, silicon substrates. A five photomask level process employing contact photolithography was used to pattern for boron diffusions, phorphorus diffusions, and contact metallization. Fabricated devices demonstrated an open circuit voltage of 3.6 volts and a short circuit current of 90 mA at 80 AMl suns. An equivalent circuit model of the planar multi-junction solar cell was developed.

Protective Socket For Integrated Circuits

NASA Technical Reports Server (NTRS)

Wilkinson, Chris; Henegar, Greg

1988-01-01

Socket for intergrated circuits (IC's) protects from excessive voltages and currents or from application of voltages and currents in wrong sequence during insertion or removal. Contains built-in switch that opens as IC removed, disconnecting leads from signals and power. Also protects other components on circuit board from transients produced by insertion and removal of IC. Makes unnecessary to turn off power to entire circuit board so other circuits on board continue to function.

High-durability surface-discharge flash x-ray tube driven by a two-stage Marx pulser

NASA Astrophysics Data System (ADS)

Shikoda, Arimitsu; Sato, Eiichi; Kimura, Shingo; Oizumi, Teiji; Tamakawa, Yoshiharu; Yanagisawa, Toru

1993-02-01

We developed a high-durability flash x-ray tube with a plate-shaped ferrite cathode for the use in the field of biomedical engineering and technology. The surface-discharge cathode was very useful for generating stable flash x rays. This flash x-ray generator consisted of the following essential components: a high-voltage power supply, an energy-storage condenser of 97 nF, a two-stage Marx type pulser, an oil diffusion pump, and a flash x-ray tube. This x-ray tube was of a diode which was connected to the turbo molecular pump and had plate-shaped anode and cathode electrodes. The cathode electrode was made of ferrite, and its edge was covered with a thin gold film by means of the spattering in order to decrease contact resistance. The space between the anode and cathode electrodes could be regulated from the outside of the x-ray rube. The two condensers in Marx circuit were charged from 50 to 70 kV by a power supply, and the condensers were connected in series after closing a gap switch. Thus the maximum output voltages from the pulser were about two times the charged voltages. In this experiment, the maximum tube voltage and the current were about 110 kV and 0.8 kA, respectively. The pulse widths were less than 140 ns, and the maximum x-ray intensity was 1.27 (mu) C/kg at 0.5 m per pulse. The size of the focal spot and the maximum repetition rate were about 2 X 2.5 mm and 50 Hz (fps), respectively.

Cathodic reduction of hexavalent chromium [Cr(VI)] coupled with electricity generation in microbial fuel cells.

PubMed

Wang, Gang; Huang, Liping; Zhang, Yifeng

2008-11-01

A novel approach to Cr(VI)-contaminated wastewater treatment was investigated using microbial fuel cell technologies in fed-batch mode. By using synthetic Cr(VI)-containing wastewater as catholyte and anaerobic microorganisms as anodic biocatalyst, Cr(VI) at 100 mg/l was completely removed during 150 h (initial pH 2). The maximum power density of 150 mW/m(2) (0.04 mA/cm(2)) and the maximum open circuit voltage of 0.91 V were generated with Cr(VI) at 200 mg/l as electron acceptor. This work verifies the possibility of simultaneous electricity production and cathodic Cr(VI) reduction.

Vibration energy harvesting using piezoelectric unimorph cantilevers with unequal piezoelectric and nonpiezoelectric lengths

PubMed Central

Gao, Xiaotong; Shih, Wei-Heng; Shih, Wan Y.

2010-01-01

We have examined a piezoelectric unimorph cantilever (PUC) with unequal piezoelectric and nonpiezoelectric lengths for vibration energy harvesting theoretically by extending the analysis of a PUC with equal piezoelectric and nonpiezoelectric lengths. The theoretical approach was validated by experiments. A case study showed that for a fixed vibration frequency, the maximum open-circuit induced voltage which was important for charge storage for later use occurred with a PUC that had a nonpiezoelectric-to-piezoelectric length ratio greater than unity, whereas the maximum power when the PUC was connected to a resistor for immediate power consumption occurred at a unity nonpiezoelectric-to-piezoelectric length ratio. PMID:21200444

Vibration energy harvesting using piezoelectric unimorph cantilevers with unequal piezoelectric and nonpiezoelectric lengths.

PubMed

Gao, Xiaotong; Shih, Wei-Heng; Shih, Wan Y

2010-12-06

We have examined a piezoelectric unimorph cantilever (PUC) with unequal piezoelectric and nonpiezoelectric lengths for vibration energy harvesting theoretically by extending the analysis of a PUC with equal piezoelectric and nonpiezoelectric lengths. The theoretical approach was validated by experiments. A case study showed that for a fixed vibration frequency, the maximum open-circuit induced voltage which was important for charge storage for later use occurred with a PUC that had a nonpiezoelectric-to-piezoelectric length ratio greater than unity, whereas the maximum power when the PUC was connected to a resistor for immediate power consumption occurred at a unity nonpiezoelectric-to-piezoelectric length ratio.

30 CFR 18.54 - High-voltage continuous mining machines.

Code of Federal Regulations, 2010 CFR

2010-07-01

... and Design Requirements § 18.54 High-voltage continuous mining machines. (a) Separation of high... removed. (c) Circuit-interrupting devices. Circuit-interrupting devices must be designed and installed to... ground. (e) Onboard ungrounded, three-phase power circuit. A continuous mining machine designed with an...

30 CFR 18.54 - High-voltage continuous mining machines.

Code of Federal Regulations, 2013 CFR

2013-07-01

... and Design Requirements § 18.54 High-voltage continuous mining machines. (a) Separation of high... removed. (c) Circuit-interrupting devices. Circuit-interrupting devices must be designed and installed to... ground. (e) Onboard ungrounded, three-phase power circuit. A continuous mining machine designed with an...

30 CFR 18.54 - High-voltage continuous mining machines.

Code of Federal Regulations, 2014 CFR

2014-07-01

... and Design Requirements § 18.54 High-voltage continuous mining machines. (a) Separation of high... removed. (c) Circuit-interrupting devices. Circuit-interrupting devices must be designed and installed to... ground. (e) Onboard ungrounded, three-phase power circuit. A continuous mining machine designed with an...

30 CFR 18.54 - High-voltage continuous mining machines.

Code of Federal Regulations, 2012 CFR

2012-07-01

... and Design Requirements § 18.54 High-voltage continuous mining machines. (a) Separation of high... removed. (c) Circuit-interrupting devices. Circuit-interrupting devices must be designed and installed to... ground. (e) Onboard ungrounded, three-phase power circuit. A continuous mining machine designed with an...

30 CFR 18.54 - High-voltage continuous mining machines.

Code of Federal Regulations, 2011 CFR

2011-07-01

... and Design Requirements § 18.54 High-voltage continuous mining machines. (a) Separation of high... removed. (c) Circuit-interrupting devices. Circuit-interrupting devices must be designed and installed to... ground. (e) Onboard ungrounded, three-phase power circuit. A continuous mining machine designed with an...

A nickel-cadmium battery reconditioning circuit

NASA Technical Reports Server (NTRS)

Lanier, R.

1977-01-01

The circuit presented is simple and small enough to be included in a typical battery charge/power control assembly, yet provides the advantage of a complete ground-type battery reconditioning discharge. Test results on the circuit when used to recondition two 24 cell, 20 A-h nickel-cadmium batteries are given. These results show that a battery reconditioned with this circuit returns to greater than 90 percent of its original capacity (greater than nameplate capacity) and follows a typical new battery degradation curve even after over 20,000 simulated orbital cycles for a 4 year period. Applications of the circuit are considered along with recommendations relative to its use. Its application in low voltage (22 to 36 Vdc) power systems and in high voltage (100 to 150 Vdc) power systems is discussed. The implications are that the high voltage systems have a greater need for battery reconditioning than their low voltage counterparts, and that using these circuit techniques, the expected life of a battery in low Earth orbit can be up to 5 years.

Temperature gradient measurements by using thermoelectric effect in CNTs-silicone adhesive composite.

PubMed

Chani, Muhammad Tariq Saeed; Karimov, Kh S; Asiri, Abdullah M; Ahmed, Nisar; Bashir, Muhammad Mehran; Khan, Sher Bahadar; Rub, Malik Abdul; Azum, Naved

2014-01-01

This work presents the fabrication and investigation of thermoelectric cells based on composite of carbon nanotubes (CNT) and silicone adhesive. The composite contains CNT and silicon adhesive 1∶1 by weight. The current-voltage characteristics and dependences of voltage, current and Seebeck coefficient on the temperature gradient of cell were studied. It was observed that with increase in temperature gradient the open circuit voltage, short circuit current and the Seebeck coefficient of the cells increase. Approximately 7 times increase in temperature gradient increases the open circuit voltage and short circuit current up to 40 and 5 times, respectively. The simulation of experimental results is also carried out; the simulated results are well matched with experimental results.

Temperature Gradient Measurements by Using Thermoelectric Effect in CNTs-Silicone Adhesive Composite

PubMed Central

Chani, Muhammad Tariq Saeed; Karimov, Kh. S.; Asiri, Abdullah M.; Ahmed, Nisar; Bashir, Muhammad Mehran; Khan, Sher Bahadar; Rub, Malik Abdul; Azum, Naved

2014-01-01

This work presents the fabrication and investigation of thermoelectric cells based on composite of carbon nanotubes (CNT) and silicone adhesive. The composite contains CNT and silicon adhesive 1∶1 by weight. The current-voltage characteristics and dependences of voltage, current and Seebeck coefficient on the temperature gradient of cell were studied. It was observed that with increase in temperature gradient the open circuit voltage, short circuit current and the Seebeck coefficient of the cells increase. Approximately 7 times increase in temperature gradient increases the open circuit voltage and short circuit current up to 40 and 5 times, respectively. The simulation of experimental results is also carried out; the simulated results are well matched with experimental results. PMID:24748375

Compact high voltage solid state switch

DOEpatents

Glidden, Steven C.

2003-09-23

A compact, solid state, high voltage switch capable of high conduction current with a high rate of current risetime (high di/dt) that can be used to replace thyratrons in existing and new applications. The switch has multiple thyristors packaged in a single enclosure. Each thyristor has its own gate drive circuit that circuit obtains its energy from the energy that is being switched in the main circuit. The gate drives are triggered with a low voltage, low current pulse isolated by a small inexpensive transformer. The gate circuits can also be triggered with an optical signal, eliminating the trigger transformer altogether. This approach makes it easier to connect many thyristors in series to obtain the hold off voltages of greater than 80 kV.

Charging system and method for multicell storage batteries

DOEpatents

Cox, Jay A.

1978-01-01

A battery-charging system includes a first charging circuit connected in series with a plurality of battery cells for controlled current charging. A second charging circuit applies a controlled voltage across each individual cell for equalization of the cells to the fully charged condition. This controlled voltage is determined at a level above the fully charged open-circuit voltage but at a sufficiently low level to prevent corrosion of cell components by electrochemical reaction. In this second circuit for cell equalization, a transformer primary receives closely regulated, square-wave voltage which is coupled to a plurality of equal secondary coil windings. Each secondary winding is connected in parallel to each cell of a series-connected pair of cells through half-wave rectifiers and a shared, intermediate conductor.

CMOS image sensor with contour enhancement

NASA Astrophysics Data System (ADS)

Meng, Liya; Lai, Xiaofeng; Chen, Kun; Yuan, Xianghui

2010-10-01

Imitating the signal acquisition and processing of vertebrate retina, a CMOS image sensor with bionic pre-processing circuit is designed. Integration of signal-process circuit on-chip can reduce the requirement of bandwidth and precision of the subsequent interface circuit, and simplify the design of the computer-vision system. This signal pre-processing circuit consists of adaptive photoreceptor, spatial filtering resistive network and Op-Amp calculation circuit. The adaptive photoreceptor unit with a dynamic range of approximately 100 dB has a good self-adaptability for the transient changes in light intensity instead of intensity level itself. Spatial low-pass filtering resistive network used to mimic the function of horizontal cell, is composed of the horizontal resistor (HRES) circuit and OTA (Operational Transconductance Amplifier) circuit. HRES circuit, imitating dendrite of the neuron cell, comprises of two series MOS transistors operated in weak inversion region. Appending two diode-connected n-channel transistors to a simple transconductance amplifier forms the OTA Op-Amp circuit, which provides stable bias voltage for the gate of MOS transistors in HRES circuit, while serves as an OTA voltage follower to provide input voltage for the network nodes. The Op-Amp calculation circuit with a simple two-stage Op-Amp achieves the image contour enhancing. By adjusting the bias voltage of the resistive network, the smoothing effect can be tuned to change the effect of image's contour enhancement. Simulations of cell circuit and 16×16 2D circuit array are implemented using CSMC 0.5μm DPTM CMOS process.

Factors affecting the open-circuit voltage and electrode kinetics of some iron/titanium redox flow cells

NASA Technical Reports Server (NTRS)

Reid, M. A.; Gahn, R. F.

1977-01-01

Performance of the iron-titanium redox flow cell was studied as a function of acid concentration. Anion permeable membranes separated the compartments. Electrodes were graphite cloth. Current densities ranged up to 25 mA/square centimeter. Open-circuit and load voltages decreased as the acidity was increased on the iron side as predicted. On the titanium side, open-circuit voltages decreased as the acidity was increased in agreement with theory, but load voltages increased due to decreased polarization with increasing acidity. High acidity on the titanium side coupled with low acidity on the iron side gives the best load voltage, but such cells show voltage losses as they are repeatedly cycled. Analyses show that the bulk of the voltage losses are due to diffusion of acid through the membrane.

I/O impedance controller

DOEpatents

Ruesch, Rodney; Jenkins, Philip N.; Ma, Nan

2004-03-09

There is disclosed apparatus and apparatus for impedance control to provide for controlling the impedance of a communication circuit using an all-digital impedance control circuit wherein one or more control bits are used to tune the output impedance. In one example embodiment, the impedance control circuit is fabricated using circuit components found in a standard macro library of a computer aided design system. According to another example embodiment, there is provided a control for an output driver on an integrated circuit ("IC") device to provide for forming a resistor divider network with the output driver and a resistor off the IC device so that the divider network produces an output voltage, comparing the output voltage of the divider network with a reference voltage, and adjusting the output impedance of the output driver to attempt to match the output voltage of the divider network and the reference voltage. Also disclosed is over-sampling the divider network voltage, storing the results of the over sampling, repeating the over-sampling and storing, averaging the results of multiple over sampling operations, controlling the impedance with a plurality of bits forming a word, and updating the value of the word by only one least significant bit at a time.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Milkov, Mihail M.

A comparator circuit suitable for use in a column-parallel single-slope analog-to-digital converter comprises a comparator, an input voltage sampling switch, a sampling capacitor arranged to store a voltage which varies with an input voltage when the sampling switch is closed, and a local ramp buffer arranged to buffer a global voltage ramp applied at an input. The comparator circuit is arranged such that its output toggles when the buffered global voltage ramp exceeds the stored voltage. Both DC- and AC-coupled comparator embodiments are disclosed.

Electronics Reliability Fracture Mechanics, Volume 1. Causes of Failures of Shop Replaceable Units and Hybrid Microcircuits

DTIC Science & Technology

1992-05-01

Plate Figure H-1. Temperature Coefficient Test Circuit The forward voltage was measured at 3 different termperatures. The average TC was calculated to be...AT, rather than the average figure given by the large area Isolation diffusion. The peak temperature , rather than the average temperature , is the...components would cause the temperatures of the components to be nearer the average , particularly those near the minimum and maximum. X-I The largest

Analysis and calculation of lightning-induced voltages in aircraft electrical circuits

NASA Technical Reports Server (NTRS)

Plumer, J. A.

1974-01-01

Techniques to calculate the transfer functions relating lightning-induced voltages in aircraft electrical circuits to aircraft physical characteristics and lightning current parameters are discussed. The analytical work was carried out concurrently with an experimental program of measurements of lightning-induced voltages in the electrical circuits of an F89-J aircraft. A computer program, ETCAL, developed earlier to calculate resistive and inductive transfer functions is refined to account for skin effect, providing results more valid over a wider range of lightning waveshapes than formerly possible. A computer program, WING, is derived to calculate the resistive and inductive transfer functions between a basic aircraft wing and a circuit conductor inside it. Good agreement is obtained between transfer inductances calculated by WING and those reduced from measured data by ETCAL. This computer program shows promise of expansion to permit eventual calculation of potential lightning-induced voltages in electrical circuits of complete aircraft in the design stage.

Improvement in Brightness Uniformity by Compensating for the Threshold Voltages of Both the Driving Thin-Film Transistor and the Organic Light-Emitting Diode for Active-Matrix Organic Light-Emitting Diode Displays

NASA Astrophysics Data System (ADS)

Ching-Lin Fan,; Hui-Lung Lai,; Jyu-Yu Chang,

2010-05-01

In this paper, we propose a novel pixel design and driving method for active-matrix organic light-emitting diode (AM-OLED) displays using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs). The proposed threshold voltage compensation circuit, which comprised five transistors and two capacitors, has been verified to supply uniform output current by simulation work using the automatic integrated circuit modeling simulation program with integrated circuit emphasis (AIM-SPICE) simulator. The driving scheme of this voltage programming method includes four periods: precharging, compensation, data input, and emission. The simulated results demonstrate excellent properties such as low error rate of OLED anode voltage variation (<1%) and high output current. The proposed pixel circuit shows high immunity to the threshold voltage deviation characteristics of both the driving poly-Si TFT and the OLED.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Volkov, M. S.; Gusev, Yu. P., E-mail: GusevYP@mpei.ru; Monakov, Yu. V.

The insertion of current-limiting reactors into electrical equipment operating at a voltage of 110 and 220 kV produces a change in the parameters of the transient recovery voltages at the contacts of the circuit breakers for disconnecting short circuits, which could be the reason for the increase in the duration of the short circuit, damage to the electrical equipment and losses in the power system. The results of mathematical modeling of the transients, caused by tripping of the short circuit in a reactive electric power transmission line are presented, and data are given on the negative effect of a current-limitingmore » resistor on the rate of increase and peak value of the transient recovery voltages. Methods of ensuring the standard requirements imposed on the parameters of the transient recovery voltages when using current-limiting reactors in the high-voltage electrical equipment of power plants and substations are proposed and analyzed.« less

Commutation circuit for an HVDC circuit breaker

DOEpatents

Premerlani, William J.

1981-01-01

A commutation circuit for a high voltage DC circuit breaker incorporates a resistor capacitor combination and a charging circuit connected to the main breaker, such that a commutating capacitor is discharged in opposition to the load current to force the current in an arc after breaker opening to zero to facilitate arc interruption. In a particular embodiment, a normally open commutating circuit is connected across the contacts of a main DC circuit breaker to absorb the inductive system energy trapped by breaker opening and to limit recovery voltages to a level tolerable by the commutating circuit components.

Commutation circuit for an HVDC circuit breaker

DOEpatents

Premerlani, W.J.

1981-11-10

A commutation circuit for a high voltage DC circuit breaker incorporates a resistor capacitor combination and a charging circuit connected to the main breaker, such that a commutating capacitor is discharged in opposition to the load current to force the current in an arc after breaker opening to zero to facilitate arc interruption. In a particular embodiment, a normally open commutating circuit is connected across the contacts of a main DC circuit breaker to absorb the inductive system energy trapped by breaker opening and to limit recovery voltages to a level tolerable by the commutating circuit components. 13 figs.

A high gain wide dynamic range transimpedance amplifier for optical receivers

NASA Astrophysics Data System (ADS)

Lianxi, Liu; Jiao, Zou; Yunfei, En; Shubin, Liu; Yue, Niu; Zhangming, Zhu; Yintang, Yang

2014-01-01

As the front-end preamplifiers in optical receivers, transimpedance amplifiers (TIAs) are commonly required to have a high gain and low input noise to amplify the weak and susceptible input signal. At the same time, the TIAs should possess a wide dynamic range (DR) to prevent the circuit from becoming saturated by high input currents. Based on the above, this paper presents a CMOS transimpedance amplifier with high gain and a wide DR for 2.5 Gbit/s communications. The TIA proposed consists of a three-stage cascade pull push inverter, an automatic gain control circuit, and a shunt transistor controlled by the resistive divider. The inductive-series peaking technique is used to further extend the bandwidth. The TIA proposed displays a maximum transimpedance gain of 88.3 dBΩ with the -3 dB bandwidth of 1.8 GHz, exhibits an input current dynamic range from 100 nA to 10 mA. The output voltage noise is less than 48.23 nV/√Hz within the -3 dB bandwidth. The circuit is fabricated using an SMIC 0.18 μm 1P6M RFCMOS process and dissipates a dc power of 9.4 mW with 1.8 V supply voltage.

Development of a Compact Rectenna for Wireless Powering of a Head-Mountable Deep Brain Stimulation Device.

PubMed

Hosain, M D Kamal; Kouzani, Abbas Z; Tye, Susannah J; Abulseoud, Osama A; Amiet, Andrew; Galehdar, Amir; Kaynak, Akif; Berk, Michael

2014-01-01

Design of a rectangular spiral planar inverted-F antenna (PIFA) at 915 MHz for wireless power transmission applications is proposed. The antenna and rectifying circuitry form a rectenna, which can produce dc power from a distant radio frequency energy transmitter. The generated dc power is used to operate a low-power deep brain stimulation pulse generator. The proposed antenna has the dimensions of 10 mm [Formula: see text]12.5 mm [Formula: see text]1.5 mm and resonance frequency of 915 MHz with a measured bandwidth of 15 MHz at return loss of [Formula: see text]. A dielectric substrate of FR-4 of [Formula: see text] and [Formula: see text] with thickness of 1.5 mm is used for both antenna and rectifier circuit simulation and fabrication because of its availability and low cost. An L-section impedance matching circuit is used between the PIFA and voltage doubler rectifier. The impedance matching circuit also works as a low-pass filter for elimination of higher order harmonics. Maximum dc voltage at the rectenna output is 7.5 V in free space and this rectenna can drive a deep brain stimulation pulse generator at a distance of 30 cm from a radio frequency energy transmitter, which transmits power of 26.77 dBm.

Wireless Low-Power Integrated Basal-Body-Temperature Detection Systems Using Teeth Antennas in the MedRadio Band.

PubMed

Yang, Chin-Lung; Zheng, Gou-Tsun

2015-11-20

This study proposes using wireless low power thermal sensors for basal-body-temperature detection using frequency modulated telemetry devices. A long-term monitoring sensor requires low-power circuits including a sampling circuit and oscillator. Moreover, temperature compensated technologies are necessary because the modulated frequency might have additional frequency deviations caused by the varying temperature. The temperature compensated oscillator is composed of a ring oscillator and a controlled-steering current source with temperature compensation, so the output frequency of the oscillator does not drift with temperature variations. The chip is fabricated in a standard Taiwan Semiconductor Manufacturing Company (TSMC) 0.18-μm complementary metal oxide semiconductor (CMOS) process, and the chip area is 0.9 mm². The power consumption of the sampling amplifier is 128 µW. The power consumption of the voltage controlled oscillator (VCO) core is less than 40 µW, and the output is -3.04 dBm with a buffer stage. The output voltage of the bandgap reference circuit is 1 V. For temperature measurements, the maximum error is 0.18 °C with a standard deviation of ±0.061 °C, which is superior to the required specification of 0.1 °C.

Mapping photovoltaic performance with nanoscale resolution

DOE PAGES

Kutes, Yasemin; Aguirre, Brandon A.; Bosse, James L.; ...

2015-10-16

Photo-conductive AFM spectroscopy (‘pcAFMs’) is proposed as a high-resolution approach for investigating nanostructured photovoltaics, uniquely providing nanoscale maps of photovoltaic (PV) performance parameters such as the short circuit current, open circuit voltage, maximum power, or fill factor. The method is demonstrated with a stack of 21 images acquired during in situ illumination of micropatterned polycrystalline CdTe/CdS, providing more than 42,000 I/V curves spatially separated by ~5 nm. For these CdTe/CdS microcells, the calculated photoconduction ranges from 0 to 700 picoSiemens (pS) upon illumination with ~1.6 suns, depending on location and biasing conditions. Mean short circuit currents of 2 pA, maximummore » powers of 0.5 pW, and fill factors of 30% are determined. The mean voltage at which the detected photocurrent is zero is determined to be 0.7 V. Significantly, enhancements and reductions in these more commonly macroscopic PV performance metrics are observed to correlate with certain grains and grain boundaries, and are confirmed to be independent of topography. Furthermore, these results demonstrate the benefits of nanoscale resolved PV functional measurements, reiterate the importance of microstructural control down to the nanoscale for 'PV devices, and provide a widely applicable new approach for directly investigating PV materials.« less

Commutating Permanent-Magnet Motors At Low Speed

NASA Technical Reports Server (NTRS)

Dolland, C.

1985-01-01

Circuit provides forced commutation during starting. Forced commutation circuit diverts current from inverter SCR's and turns SCR's off during commutation intervals. Silicon controlled rectifier in circuit unnecessary when switch S10 replaced by high-current, high-voltage transistor. At present, high-current, low-voltage device must suffice.

The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Özaydın, C.; Güllü, Ö., E-mail: omergullu@gmail.com; Pakma, O.

2016-05-15

Highlights: • Optical properties and thickness of the A novel organometallic complex (OMC) film were investigated by spectroscopic ellipsometry (SE). • Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated • This paper presents the I–V analysis of Au/OMC/n-Si MIS diode. • Current–voltage and photovoltaic properties of the diode were investigated. - Abstract: In this work, organometallic complex (OMC) films have been deposited onto glass or silicon substrates by spin coating technique and their photovoltaic application potential has been investigated. Optical properties and thickness of the film have been investigated by spectroscopic ellipsometry (SE). Also, transmittance spectrum has been taken by UV/vismore » spectrophotometer. The optical method has been used to determine the band gap value of the films. Also, Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated. Current–voltage and photovoltaic properties of the structure were investigated. The ideality factor (n) and barrier height (Φ{sub b}) values of the diode were found to be 2.89 and 0.79 eV, respectively. The device shows photovoltaic behavior with a maximum open-circuit voltage of 396 mV and a short circuit current of 33.8 μA under 300 W light.« less

Electronic optimization for an energy harvesting system based on magnetoelectric Metglas/poly(vinylidene fluoride)/Metglas composites

NASA Astrophysics Data System (ADS)

Reis, S.; Silva, M. P.; Castro, N.; Correia, V.; Rocha, J. G.; Martins, P.; Lasheras, A.; Gutierrez, J.; Lanceros-Mendez, S.

2016-08-01

Harvesting magnetic energy from the environment is becoming increasingly attractive for being a renewable and inexhaustible power source, ubiquitous and accessible in remote locations. In particular, magnetic harvesting with polymer-based magnetoelectric (ME) materials meet the industry demands of being flexible, showing large area potential, lightweight and biocompatibility. In order to get the best energy harvesting process, the extraction circuit needs to be optimized in order to be useful for powering devices. This paper discusses the design and performance of five interface circuits, a full-wave bridge rectifier, two Cockcroft-Walton voltage multipliers (with 1 and 2 stages) and two Dickson voltage multipliers (with 2 and 3 stages), for the energy harvesting from a Fe61.6Co16.4Si10.8B11.2 (Metglas)/polyvinylidene fluoride/Metglas ME composite. Maximum power and power density values of 12 μW and 0.9 mW cm-3 were obtained, respectively, with the Dickson voltage multiplier with two stages, for a load resistance of 180 kΩ, at 7 Oe DC magnetic field and a 54.5 kHz resonance frequency. Such performance is useful for microdevice applications in hard-to-reach locations and for traditional devices such as electric windows, door locking, and tire pressure monitoring.

A High Efficiency Boost Converter with MPPT Scheme for Low Voltage Thermoelectric Energy Harvesting

NASA Astrophysics Data System (ADS)

Guan, Mingjie; Wang, Kunpeng; Zhu, Qingyuan; Liao, Wei-Hsin

2016-11-01

Using thermoelectric elements to harvest energy from heat has been of great interest during the last decade. This paper presents a direct current-direct current (DC-DC) boost converter with a maximum power point tracking (MPPT) scheme for low input voltage thermoelectric energy harvesting applications. Zero current switch technique is applied in the proposed MPPT scheme. Theoretical analysis on the converter circuits is explored to derive the equations for parameters needed in the design of the boost converter. Simulations and experiments are carried out to verify the theoretical analysis and equations. A prototype of the designed converter is built using discrete components and a low-power microcontroller. The results show that the designed converter can achieve a high efficiency at low input voltage. The experimental efficiency of the designed converter is compared with a commercial converter solution. It is shown that the designed converter has a higher efficiency than the commercial solution in the considered voltage range.

High-voltage integrated active quenching circuit for single photon count rate up to 80 Mcounts/s.

PubMed

Acconcia, Giulia; Rech, Ivan; Gulinatti, Angelo; Ghioni, Massimo

2016-08-08

Single photon avalanche diodes (SPADs) have been subject to a fast improvement in recent years. In particular, custom technologies specifically developed to fabricate SPAD devices give the designer the freedom to pursue the best detector performance required by applications. A significant breakthrough in this field is represented by the recent introduction of a red enhanced SPAD (RE-SPAD) technology, capable of attaining a good photon detection efficiency in the near infrared range (e.g. 40% at a wavelength of 800 nm) while maintaining a remarkable timing resolution of about 100ps full width at half maximum. Being planar, the RE-SPAD custom technology opened the way to the development of SPAD arrays particularly suited for demanding applications in the field of life sciences. However, to achieve such excellent performance custom SPAD detectors must be operated with an external active quenching circuit (AQC) designed on purpose. Next steps toward the development of compact and practical multichannel systems will require a new generation of monolithically integrated AQC arrays. In this paper we present a new, fully integrated AQC fabricated in a high-voltage 0.18 µm CMOS technology able to provide quenching pulses up to 50 Volts with fast leading and trailing edges. Although specifically designed for optimal operation of RE-SPAD devices, the new AQC is quite versatile: it can be used with any SPAD detector, regardless its fabrication technology, reaching remarkable count rates up to 80 Mcounts/s and generating a photon detection pulse with a timing jitter as low as 119 ps full width at half maximum. The compact design of our circuit has been specifically laid out to make this IC a suitable building block for monolithically integrated AQC arrays.

A Smart Load Interface and Voltage Regulator for Electrostatic Vibration Energy Harvester

NASA Astrophysics Data System (ADS)

Bedier, Mohammed; Basset, Philippe; Galayko, Dimitri

2016-11-01

This paper presents a new implementation in ams 0.35μm HV technology of a complete energy management system for an electrostatic vibrational energy harvester (e-VEH). It is based on the Bennet's doubler architecture and includes a load voltage regulator (LVR) and a smart Load Interface (LI) that are self-controlled with internal voltages for maximum power point tracking (MMPT). The CMOS implementation makes use of an energy harvester that is capable of producing up to 1.8μW at harmonic excitation, given its internal voltage is kept within its optimum. An intermediate LI stage and its controller makes use of a high side switch with zero static power level shifter, and a low power hysteresis comparator. A full circuit level simulation with a VHDL-AMS model of the e-VEH presented was successfully achieved, indicating that the proposed load interface controller consumes less than 100nW average power. Moreover, a LVR regulates the buffer and discharge the harvested energy into a generic resistive load maintaining the voltage within a nominal value of 2 Volts.

Effect of component compression on the initial performance of an IPV nickel-hydrogen cell

NASA Technical Reports Server (NTRS)

Gahn, Randall F.

1987-01-01

An experimental method was developed for evaluating the effect of component compression on the charge and discharge voltage characteristics of a 3 1/2 in. diameter boiler plate cell. A standard boiler plate pressure vessel was modified by the addition of a mechanical feedthrough on the bottom of the vessel which permitted different compressions to be applied to the components without disturbing the integrity of the stack. Compression loadings from 0.94 to 27.4 psi were applied by suspending weights from the feedthrough rod. Cell voltages were measured for 0.96-C, 55-min charge and for 1.37-C, 35-min and 2-C, 24-min discharges. An initial change in voltage performance on both charge and discharge as the loading increased was attributed to seating of the components. Subsequent variation of the compression from 2.97 to 27.4 psi caused only minor changes in either the charge or the discharge voltages. Several one month open-circuit voltage stands and 1100 cycles under LEO conditions at the maximum loading have produced no change in performance.

Effect of component compression on the initial performance of an IPV nickel-hydrogen cell. [Individual Pressure Vessel

NASA Technical Reports Server (NTRS)

Gahn, Randall F.

1987-01-01

An experimental method was developed for evaluating the effect of component compression on the charge and discharge voltage characteristics of a 3 1/2 in. diameter boiler plate cell. A standard boiler plate pressure vessel was modified by the addition of a mechanical feedthrough on the bottom of the vessel which permitted different compressions to be applied to the components without disturbing the integrity of the stack. Compression loadings from 0.94 to 27.4 psi were applied by suspending weights from the feedthrough rod. Cell voltages were measured for 0.96-C, 55-min charge and for 1.37-C, 35-min and 2-C, 24-min discharges. An initial change in voltage performance on both charge and discharge as the loading increased was attributed to seating of the components. Subsequent variation of the compression from 2.97 to 27.4 psi caused only minor changes in either the charge or the discharge voltages. Several one month open-circuit voltage stands and 1100 cycles under LEO conditions at the maximum loading have produced no change in performance.

Numerical study of He/CF{sub 3}I pulsed discharge used to produce iodine atom in chemical oxygen-iodine laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang Jiao; Wang Yanhui; Wang Dezhen

2013-04-15

The pulsed discharge for producing iodine atoms from the alkyl and perfluoroalky iodides (CH{sub 3}I, CF{sub 3}I, etc.) is the most efficient method for achieving the pulse operating mode of a chemical oxygen-iodine laser. In this paper, a one-dimensional fluid model is developed to study the characteristics of pulsed discharge in CF{sub 3}I-He mixture. By solving continuity equation, momentum equation, Poisson equation, Boltzmann equation, and an electric circuit equation, the temporal evolution of discharge current density and various discharge products, especially the atomic iodine, are investigated. The dependence of iodine atom density on discharge parameters is also studied. The resultsmore » show that iodine atom density increases with the pulsed width and pulsed voltage amplitude. The mixture ratio of CF{sub 3}I and helium plays a more significant role in iodine atom production. For a constant voltage amplitude, there exists an optimal mixture ratio under which the maximum iodine atom concentration is achieved. The bigger the applied voltage amplitude is, the higher partial pressure of CF{sub 3}I is needed to obtain the maximum iodine atom concentration.« less

Microcircuit Modeling and Simulation beyond Ohm's Law

ERIC Educational Resources Information Center

Saxena, T.; Chek, D. C. Y.; Tan, M. L. P.; Arora, V. K.

2011-01-01

Circuit theory textbooks rely heavily on the applicability of Ohm's law, which collapses as electronic components reach micro- and nanoscale dimensions. Circuit analysis is examined in the regime where the applied voltage V is greater than the critical voltage V[subscript c], which triggers the nonlinear behavior. The critical voltage is infinity…

Silicon Controlled Switch for Detection of Ionizing Radiation

DTIC Science & Technology

2015-12-01

sensitivity of previous NPS silicon controlled rectifier (SCR) based circuits. Additionally, the circuit in this thesis was able to detect AM-241 and...sensitivity of previous NPS silicon controlled rectifier (SCR) based circuits. Additionally, the circuit in this thesis was able to detect AM-241 and...Controlled Rectifier SCS Silicon-Controlled Switch SONAR SOund Navigation and Ranging VBIAS Applied Bias Voltage VH Holding Voltage VS Standalone SCS

A temperature monitor circuit with small voltage sensitivity using a topology-reconfigurable ring oscillator

NASA Astrophysics Data System (ADS)

Kishimoto, Tadashi; Ishihara, Tohru; Onodera, Hidetoshi

2018-04-01

In this paper, we propose a temperature monitor circuit that exhibits a small supply voltage sensitivity adopting a circuit topology of a reconfigurable ring oscillator. The circuit topology of the monitor is crafted such that the oscillation frequency is determined by the amount of subthreshold leakage current, which has an exponential dependence on temperature. Another important characteristic of the monitor is its small supply voltage sensitivity. The measured oscillation frequency of a test chip fabricated in a 65 nm CMOS process varies only 2.6% under a wide range of supply voltages from 0.4 to 1.0 V at room temperature. The temperature estimation error ranges from -0.3 to 0.4 °C over a temperature range of 10 to 100 °C.

High voltage pulse generator

DOEpatents

Fasching, George E.

1977-03-08

An improved high-voltage pulse generator has been provided which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of a first one of the rectifiers connected between the first and second of the plurality of charging capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. Alternate circuits are provided for controlling the application of the charging voltage from a charging circuit to be applied to the parallel capacitors which provides a selection of at least two different intervals in which the charging voltage is turned "off" to allow the SCR's connecting the capacitors in series to turn "off" before recharging begins. The high-voltage pulse-generating circuit including the N capacitors and corresponding SCR's which connect the capacitors in series when triggered "on" further includes diodes and series-connected inductors between the parallel-connected charging capacitors which allow sufficiently fast charging of the capacitors for a high pulse repetition rate and yet allow considerable control of the decay time of the high-voltage pulses from the pulse-generating circuit.

Amorphous-silicon module intercell corrosion

NASA Astrophysics Data System (ADS)

Mon, G. R.; Ross, R. G.

1987-06-01

Three non-electrochemical, moisture-induced a-Si module degradation modes have been observed and their mechanisms studied: (1) the formation and growth of pinholes in the thin-film layers; (2) the directional interfusion of pinholes along process scribe lines to form metallization-free regions that tend to open-circuit the module; and (3) worm-like filiform corrosion in the aluminum layer. The dependency on time-of-exposure to moist environments of the amount of material erosion in the module intercell zone has been quantified by two methods—directly by EDS analysis, and indirectly by sheet resistivity measurements on fully aluminized back surface modules. In addition, changes in maximum power output, series resistance, and open circuit voltage have been documented. Consequences for fielded modules are discussed.

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact

PubMed Central

2015-01-01

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm2 and a high power conversion efficiency of 19.2%. PMID:25679010

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact.

PubMed

Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; Chen, Kevin; Hettick, Mark; Zheng, Maxwell; Chen, Cheng-Ying; Kiriya, Daisuke; Javey, Ali

2014-12-17

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO 2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency of 19.2%.

The photovoltaic impact of atomic layer deposited TiO2 interfacial layer on Si-based photodiodes

NASA Astrophysics Data System (ADS)

Karabulut, Abdulkerim; Orak, İkram; Türüt, Abdulmecit

2018-06-01

In present work, photocurrent, current-voltage (I-V) and capacitance/conductance-voltage-frequency (C/G-V-f) measurements were analyzed for the photodiode and diode parameters of Al/TiO2/p-Si structure. The TiO2 thin film structure was deposited on p-Si by using atomic layer deposition technique (ALD) and its thickness was about 10 nm. The surface morphology of TiO2 coated on p-Si structure was observed via atomic force microscope (AFM). Barrier height (Φb) and ideality factor (n) values of device were found to be 0.80 eV, 0.70 eV, 0.56 eV and 1.04, 2.24, 10.27 under dark, 10 and 100 mW/cm2, respectively. Some photodiodes parameters such as fill factor (FF), power efficiency (%η), open circuit voltage (Voc), short circuit current (Isc) were obtained from I-V measurement under different light intensity. FF and η were accounted 49.2, 39,0 and 0.05, 0.45 under 10 and 100 mW/cm2 light power intensity, respectively. C-2-V graph was plotted from C-V-f measurements and zero bias voltage (V0), donor concentration (Nd), Fermi energy (EF), barrier height (Φb) and maximum electric field (Em) were determined from C-2-V data for different frequencies. The electrical and photocurrent values demonstrated that it can be used for photodiode, photo detector and photo sensing applications.

Flexible CMOS-Like Circuits Based on Printed P-Type and N-Type Carbon Nanotube Thin-Film Transistors.

PubMed

Zhang, Xiang; Zhao, Jianwen; Dou, Junyan; Tange, Masayoshi; Xu, Weiwei; Mo, Lixin; Xie, Jianjun; Xu, Wenya; Ma, Changqi; Okazaki, Toshiya; Cui, Zheng

2016-09-01

P-type and n-type top-gate carbon nanotube thin-film transistors (TFTs) can be selectively and simultaneously fabricated on the same polyethylene terephthalate (PET) substrate by tuning the types of polymer-sorted semiconducting single-walled carbon nanotube (sc-SWCNT) inks, along with low temperature growth of HfO 2 thin films as shared dielectric layers. Both the p-type and n-type TFTs show good electrical properties with on/off ratio of ≈10 5 , mobility of ≈15 cm 2 V -1 s -1 , and small hysteresis. Complementary metal oxide semiconductor (CMOS)-like logic gates and circuits based on as-prepared p-type and n-type TFTs have been achieved. Flexible CMOS-like inverters exhibit large noise margin of 84% at low voltage (1/2 V dd = 1.5 V) and maximum voltage gain of 30 at V dd of 1.5 V and low power consumption of 0.1 μW. Both of the noise margin and voltage gain are one of the best values reported for flexible CMOS-like inverters at V dd less than 2 V. The printed CMOS-like inverters work well at 10 kHz with 2% voltage loss and delay time of ≈15 μs. A 3-stage ring oscillator has also been demonstrated on PET substrates and the oscillation frequency of 3.3 kHz at V dd of 1 V is achieved. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Analog circuit for controlling acoustic transducer arrays

DOEpatents

Drumheller, Douglas S.

1991-01-01

A simplified ananlog circuit is presented for controlling electromechanical transducer pairs in an acoustic telemetry system. The analog circuit of this invention comprises a single electrical resistor which replaces all of the digital components in a known digital circuit. In accordance with this invention, a first transducer in a transducer pair of array is driven in series with the resistor. The voltage drop across this resistor is then amplified and used to drive the second transducer. The voltage drop across the resistor is proportional and in phase with the current to the transducer. This current is approximately 90 degrees out of phase with the driving voltage to the transducer. This phase shift replaces the digital delay required by the digital control circuit of the prior art.

Minimized open-circuit voltage reduction in GaAs/InGaAs quantum well solar cells with bandgap-engineered graded quantum well depths

NASA Astrophysics Data System (ADS)

Li, Xiaohan; Dasika, Vaishno D.; Li, Ping-Chun; Ji, Li; Bank, Seth R.; Yu, Edward T.

2014-09-01

The use of InGaAs quantum wells with composition graded across the intrinsic region to increase open-circuit voltage in p-i-n GaAs/InGaAs quantum well solar cells is demonstrated and analyzed. By engineering the band-edge energy profile to reduce photo-generated carrier concentration in the quantum wells at high forward bias, simultaneous increases in both open-circuit voltage and short-circuit current density are achieved, compared to those for a structure with the same average In concentration, but constant rather than graded quantum well composition across the intrinsic region. This approach is combined with light trapping to further increase short-circuit current density.

The temperature dependence of the characteristics of crystalline-silicon-based heterojunction solar cells

NASA Astrophysics Data System (ADS)

Sachenko, A. V.; Kryuchenko, Yu. V.; Kostylyov, V. P.; Korkishko, R. M.; Sokolovskyi, I. O.; Abramov, A. S.; Abolmasov, S. N.; Andronikov, D. A.; Bobyl', A. V.; Panaiotti, I. E.; Terukov, E. I.; Titov, A. S.; Shvarts, M. Z.

2016-03-01

Temperature dependences of the photovoltaic characteristics of ( p)a-Si/( i)a-Si:H/( n)c-Si singlecrystalline- silicon based heterojunction-with-intrinsic-thin-layer (HIT) solar cells have been measured in a temperature range of 80-420 K. The open-circuit voltage ( V OC), fill factor ( FF) of the current-voltage ( I-U) characteristic, and maximum output power ( P max) reach limiting values in the interval of 200-250 K on the background of monotonic growth in the short-circuit current ( I SC) in a temperature range of 80-400 K. At temperatures below this interval, the V OC, FF, and P max values exhibit a decrease. It is theoretically justified that a decrease in the photovoltaic energy conversion characteristics of solar cells observed on heating from 250 to 400 K is related to exponential growth in the intrinsic conductivity. At temperatures below 200 K, the I-U curve shape exhibits a change that is accompanied by a drop in V OC. Possible factors that account for the decrease in V OC, FF, and P max are considered.

Research on resistance characteristics of YBCO tape under short-time DC large current impact

NASA Astrophysics Data System (ADS)

Zhang, Zhifeng; Yang, Jiabin; Qiu, Qingquan; Zhang, Guomin; Lin, Liangzhen

2017-06-01

Research of the resistance characteristics of YBCO tape under short-time DC large current impact is the foundation of the developing DC superconducting fault current limiter (SFCL) for voltage source converter-based high voltage direct current system (VSC-HVDC), which is one of the valid approaches to solve the problems of renewable energy integration. SFCL can limit DC short-circuit and enhance the interrupting capabilities of DC circuit breakers. In this paper, under short-time DC large current impacts, the resistance features of naked tape of YBCO tape are studied to find the resistance - temperature change rule and the maximum impact current. The influence of insulation for the resistance - temperature characteristics of YBCO tape is studied by comparison tests with naked tape and insulating tape in 77 K. The influence of operating temperature on the tape is also studied under subcooled liquid nitrogen condition. For the current impact security of YBCO tape, the critical current degradation and top temperature are analyzed and worked as judgment standards. The testing results is helpful for in developing SFCL in VSC-HVDC.

Effect of emitter layer doping concentration on the performance of a silicon thin film heterojunction solar cell

NASA Astrophysics Data System (ADS)

Zhang, Lei; Shen, Hong-Lie; Yue, Zhi-Hao; Jiang, Feng; Wu, Tian-Ru; Pan, Yuan-Yuan

2013-01-01

A novel type of n/i/i/p heterojunction solar cell with a-Si:H(15 nm)/a-Si:H(10 nm)/ epitaxial c-Si(47 μm)/epitaxial c-Si(3 μm) structure is fabricated by using the layer transfer technique, and the emitter layer is deposited by hot wire chemical vapour deposition. The effect of the doping concentration of the emitter layer Sd (Sd=PH3/(PH3+SiH4+H2)) on the performance of the solar cell is studied by means of current density—voltage and external quantum efficiency. The results show that the conversion efficiency of the solar cell first increases to a maximum value and then decreases with Sd increasing from 0.1% to 0.4%. The best performance of the solar cell is obtained at Sd = 0.2% with an open circuit voltage of 534 mV, a short circuit current density of 23.35 mA/cm2, a fill factor of 63.3%, and a conversion efficiency of 7.9%.

Flexible printed circuit board actuators

NASA Astrophysics Data System (ADS)

Lee, Junseok; Cha, Youngsu

2017-12-01

Out-of-plane actuators are made possible by the breaking of planar symmetry. In this paper, we present a thin-film out-of-plane electrostatic actuator for a flexible printed circuit board (FPCB) that can be fabricated with a single step of the conventional manufacturing process. No other components are required for actuation except a single sheet of the FPCB, and it works based on the planar asymmetry resulting from asymmetrically patterned top and bottom electrodes on each side of the polyimide film. With the structural asymmetry, the application of a high voltage in the order of kilovolts results in the asymmetry of the electric fields and the body force density, which generates the bending moment that leads to macroscopic deformations. We applied the finite element method to examine the asymmetry induced by the difference in the electrodes. In the experiment, the displacement responses to step input and square wave input of various frequencies were analyzed. It was found that our actuator constitutes an underdamped system, exhibiting resonance characteristics. The maximum oscillatory amplitude was determined at resonance, and the relationship between the displacement and the applied voltage was investigated.

Studies on graphene zinc-oxide nanocomposites photoanodes for high-efficient dye-sensitized solar cells

NASA Astrophysics Data System (ADS)

Effendi, N. A. S.; Samsi, N. S.; Zawawi, S. A.; Hassan, O. H.; Zakaria, R.; Yahya, M. Z. A.; Ali, A. M. M.

2017-09-01

A dye-sensitized solar cells (DSSCs) using a nanocomposite (NC) semiconductor film, consisting of graphene layer and ZnO nanosheets (Gr-ZnO) is fabricated by electrodeposition process. The DSSCs based on Gr-ZnO NC were determined via electrochemical impedance spectra (EIS), UV-Visible diffused reflectance spectroscopy (UV-Vis), and photovoltaic performances J-V curves to substantiate the explanations. Impedance spectra shows that a smaller charge transport time constant occurs in DSSCs based on Gr-ZnO NC comparing to ZnO. This improved the electron collecting efficiency significantly, resulting in high open circuit voltage. Moreover, Gr-ZnO NC shows an efficient photoinduced charge separation and transportation can be achieved at the interface thus exhibit excellent potential for photocurrent generation compared with sole ZnO. Gr-ZnO NC obtained a maximum photocurrent response for an open-circuit voltage and a power conversion efficiency of 0.96 V and 7.01% respectively, which is doubled from sole ZnO. The fabricated Gr-ZnO NC cells show better performances compared to conventional ZnO structure reference cell.

Novel Piezoelectric Paper‐Based Flexible Nanogenerators Composed of BaTiO3 Nanoparticles and Bacterial Cellulose

PubMed Central

Zhang, Guangjie; Liao, Qingliang; Zhang, Zheng; Liang, Qijie; Zhao, Yingli; Zheng, Xin

2015-01-01

A piezoelectric paper based on BaTiO3 (BTO) nanoparticles and bacterial cellulose (BC) with excellent output properties for application of nanogenerators (NGs) is reported. A facile and scalable vacuum filtration method is used to fabricate the piezoelectric paper. The BTO/BC piezoelectric paper based NG shows outstanding output performance with open‐circuit voltage of 14 V and short‐circuit current density of 190 nA cm−2. The maximum power density generated by this unique BTO/BC structure is more than ten times higher than BTO/polydimethylsiloxane structure. In bending conditions, the NG device can generate output voltage of 1.5 V, which is capable of driving a liquid crystal display screen. The improved performance can be ascribed to homogeneous distribution of piezoelectric BTO nanoparticles in the BC matrix as well as the enhanced stress on piezoelectric nanoparticles implemented by the unique percolated networks of BC nanofibers. The flexible BTO/BC piezoelectric paper based NG is lightweight, eco‐friendly, and cost‐effective, which holds great promises for achieving wearable or implantable energy harvesters and self‐powered electronics. PMID:27774389

Low-bandgap mixed tin–lead iodide perovskite absorbers with long carrier lifetimes for all-perovskite tandem solar cells

DOE PAGES

Zhao, Dewei; Yu, Yue; Wang, Changlei; ...

2017-03-01

Tandem solar cells using only metal-halide perovskite sub-cells are an attractive choice for next-generation solar cells. However, the progress in developing efficient all-perovskite tandem solar cells has been hindered by the lack of high-performance low-bandgap perovskite solar cells. Here in this paper, we report efficient mixed tin-lead iodide low-bandgap (~1.25 eV) perovskite solar cells with open-circuit voltages up to 0.85 V and over 70% external quantum efficiencies in the infrared wavelength range of 700-900 nm, delivering a short-circuit current density of over 29 mA cm -2 and demonstrating suitability for bottom-cell applications in all-perovskite tandem solar cells. Our low-bandgap perovskitemore » solar cells achieve a maximum power conversion efficiency of 17.6% and a certified efficiency of 17.01% with a negligible current-voltage hysteresis. Finally, when mechanically stacked with a ~1.58 eV bandgap perovskite top cell, our best all-perovskite 4-terminal tandem solar cell shows a steady-state efficiency of 21.0%.« less

Simultaneous Increase in Open-Circuit Voltage and Efficiency of Fullerene-Free Solar Cells through Chlorinated Thieno[3,4-b]thiophene Polymer Donor

DOE PAGES

Wang, Huan; Chao, Pengjie; Chen, Hui; ...

2017-08-01

Here, the chlorinated polymer, PBTCl, have been found to be an efficient donor in non-fullerene PSCs, which showed a blue-shifted absorbance compared to that of its fluorine analog (PTB7-th), and resulted in a more complementary light absorption with non-fullerene acceptor, such as ITIC. Meanwhile, chlorine substitution lowered the HOMO level of PBTCl, which increased the open-circuit voltage of the corresponding polymer-based devices. The 2D GIWAXS analysis illustrated that the PBTCl/ITIC blend film exhibited a “face-on” orientation and scattering features of both PBTCl and ITIC, suggesting that the blend of PBTCl and ITIC was phase separated and formed individual crystalline domainsmore » of the donor and acceptor, which promoted charge transfer in the bi-continuous film and eventually elevated the solar energy conversion efficiency. The PBTCl-based non-fullerene PSC exhibited a maximum PCE of 7.57% with a Voc of 0.91 V, which was an approximately 13% increasing in the PCE compared to the fluorine-analog-based device.« less

Accurate expressions for solar cell fill factors including series and shunt resistances

NASA Astrophysics Data System (ADS)

Green, Martin A.

2016-02-01

Together with open-circuit voltage and short-circuit current, fill factor is a key solar cell parameter. In their classic paper on limiting efficiency, Shockley and Queisser first investigated this factor's analytical properties showing, for ideal cells, it could be expressed implicitly in terms of the maximum power point voltage. Subsequently, fill factors usually have been calculated iteratively from such implicit expressions or from analytical approximations. In the absence of detrimental series and shunt resistances, analytical fill factor expressions have recently been published in terms of the Lambert W function available in most mathematical computing software. Using a recently identified perturbative relationship, exact expressions in terms of this function are derived in technically interesting cases when both series and shunt resistances are present but have limited impact, allowing a better understanding of their effect individually and in combination. Approximate expressions for arbitrary shunt and series resistances are then deduced, which are significantly more accurate than any previously published. A method based on the insights developed is also reported for deducing one-diode fits to experimental data.

Low-bandgap mixed tin–lead iodide perovskite absorbers with long carrier lifetimes for all-perovskite tandem solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Dewei; Yu, Yue; Wang, Changlei

Tandem solar cells using only metal-halide perovskite sub-cells are an attractive choice for next-generation solar cells. However, the progress in developing efficient all-perovskite tandem solar cells has been hindered by the lack of high-performance low-bandgap perovskite solar cells. Here in this paper, we report efficient mixed tin-lead iodide low-bandgap (~1.25 eV) perovskite solar cells with open-circuit voltages up to 0.85 V and over 70% external quantum efficiencies in the infrared wavelength range of 700-900 nm, delivering a short-circuit current density of over 29 mA cm -2 and demonstrating suitability for bottom-cell applications in all-perovskite tandem solar cells. Our low-bandgap perovskitemore » solar cells achieve a maximum power conversion efficiency of 17.6% and a certified efficiency of 17.01% with a negligible current-voltage hysteresis. Finally, when mechanically stacked with a ~1.58 eV bandgap perovskite top cell, our best all-perovskite 4-terminal tandem solar cell shows a steady-state efficiency of 21.0%.« less

Effects of the charge-transfer reorganization energy on the open-circuit voltage in small-molecular bilayer organic photovoltaic devices: comparison of the influence of deposition rates of the donor.

PubMed

Lee, Chih-Chien; Su, Wei-Cheng; Chang, Wen-Chang

2016-05-14

The theoretical maximum of open-circuit voltage (VOC) of organic photovoltaic (OPV) devices has yet to be determined, and its origin remains debated. Here, we demonstrate that VOC of small-molecule OPV devices can be improved by controlling the deposition rate of a donor without changing the interfacial energy gap at the donor/acceptor interface. The measurement of external quantum efficiency and electroluminescence spectra facilitates the observation of the existence of charge transfer (CT) states. A simplified approach by reusing the reciprocity relationship for obtaining the properties of the CT states is proposed without introducing complex techniques. We compare experimental and fitting results and propose that reorganization energy is the primary factor in determining VOC instead of either the CT energy or electronic coupling term in bilayer OPV devices. Atomic force microscopy images indicate a weak molecular aggregation when a higher deposition rate is used. The results of temperature-dependent measurements suggest the importance of molecular stacking for the CT properties.

Simultaneous Increase in Open-Circuit Voltage and Efficiency of Fullerene-Free Solar Cells through Chlorinated Thieno[3,4- b ]thiophene Polymer Donor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Huan; Chao, Pengjie; Chen, Hui

The chlorinated polymer, PBTCl, has been found to be an efficient donor in nonfullerene polymer solar cells (PSCs), which showed a blue-shifted absorbance compared to that of its fluorine analogue (PTB7-th) and resulted in more complementary light absorption with a nonfullerene acceptor, such as ITIC. Meanwhile, chlorine substitution lowered the HOMO level of PBTCl, which increased the open-circuit voltage of the corresponding polymer-based devices. The 2D GIWAXS analysis illustrated that the PBTCl/ITIC blend film exhibited a “face-on” orientation and scattering features of both PBTCl and ITIC, suggesting that the blend of PBTCl and ITIC was phase-separated and formed individual crystallinemore » domains of the donor and acceptor, which promoted charge transfer in the bicontinuous film and eventually elevated the solar energy conversion efficiency. The PBTCl-based nonfullerene PSC exhibited a maximum PCE of 7.57% with a Voc of 0.91 V, which was an approximately 13% increasing in the PCE compared to that of the fluorine-analogue-based device.« less

Simultaneous Increase in Open-Circuit Voltage and Efficiency of Fullerene-Free Solar Cells through Chlorinated Thieno[3,4-b]thiophene Polymer Donor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Huan; Chao, Pengjie; Chen, Hui

Here, the chlorinated polymer, PBTCl, have been found to be an efficient donor in non-fullerene PSCs, which showed a blue-shifted absorbance compared to that of its fluorine analog (PTB7-th), and resulted in a more complementary light absorption with non-fullerene acceptor, such as ITIC. Meanwhile, chlorine substitution lowered the HOMO level of PBTCl, which increased the open-circuit voltage of the corresponding polymer-based devices. The 2D GIWAXS analysis illustrated that the PBTCl/ITIC blend film exhibited a “face-on” orientation and scattering features of both PBTCl and ITIC, suggesting that the blend of PBTCl and ITIC was phase separated and formed individual crystalline domainsmore » of the donor and acceptor, which promoted charge transfer in the bi-continuous film and eventually elevated the solar energy conversion efficiency. The PBTCl-based non-fullerene PSC exhibited a maximum PCE of 7.57% with a Voc of 0.91 V, which was an approximately 13% increasing in the PCE compared to the fluorine-analog-based device.« less

Up-and-down chopper circuit

DOEpatents

Goffeau, Jacques R.

1979-01-01

An improved Up-and-Down Chopper Circuit is provided which is useful for voltage regulation in a bi-directional DC power system. In the down mode, power is switched from a DC power source to a lower voltage energy storing load while in the up mode stored energy in the load is transferred to the higher voltage source. The system uses Darlington transistor switches in a conventional connection. The improvement relates to circuit additions to eliminate the effects of inter-electrode capacitance inherent with this Darlington transistor switching arrangement.

MOSFET Power Controller

NASA Technical Reports Server (NTRS)

Mitchell, J.; Jones, K.

1986-01-01

High current and voltage controlled remotely. Remote Power Conroller includes two series-connected banks of parallel-connected MOSFET's to withstand high current and voltage. Voltage sharing between switch banks, low-impedance, gate-drive circuits used. Provided controlled range for turn on. Individually trimmable to insure simultaneous switching within few nanoseconds during both turn on and turn off. Control circuit for each switch bank and over-current trip circuit float independently and supplied power via transformer T1 from inverter. Control of floating stages by optocouplers.

MULTIPLIER CIRCUIT

DOEpatents

Chase, R.L.

1963-05-01

An electronic fast multiplier circuit utilizing a transistor controlled voltage divider network is presented. The multiplier includes a stepped potentiometer in which solid state or transistor switches are substituted for mechanical wipers in order to obtain electronic switching that is extremely fast as compared to the usual servo-driven mechanical wipers. While this multiplier circuit operates as an approximation and in steps to obtain a voltage that is the product of two input voltages, any desired degree of accuracy can be obtained with the proper number of increments and adjustment of parameters. (AEC)

Apparatus and method for detecting and measuring changes in linear relationships between a number of high frequency signals

DOEpatents

Bittner, J.W.; Biscardi, R.W.

1991-03-19

An electronic measurement circuit is disclosed for high speed comparison of the relative amplitudes of a predetermined number of electrical input signals independent of variations in the magnitude of the sum of the signals. The circuit includes a high speed electronic switch that is operably connected to receive on its respective input terminals one of said electrical input signals and to have its common terminal serve as an input for a variable-gain amplifier-detector circuit that is operably connected to feed its output to a common terminal of a second high speed electronic switch. The respective terminals of the second high speed electronic switch are operably connected to a plurality of integrating sample and hold circuits, which in turn have their outputs connected to a summing logic circuit that is operable to develop first, second and third output voltages, the first output voltage being proportional to a predetermined ratio of sums and differences between the compared input signals, the second output voltage being proportional to a second summed ratio of predetermined sums and differences between said input signals, and the third output voltage being proportional to the sum of signals to the summing logic circuit. A servo system that is operably connected to receive said third output signal and compare it with a reference voltage to develop a slowly varying feedback voltage to control the variable-gain amplifier in said common amplifier-detector circuit in order to make said first and second output signals independent of variations in the magnitude of the sum of said input signals. 2 figures.

Apparatus and method for detecting and measuring changes in linear relationships between a number of high frequency signals

DOEpatents

Bittner, John W.; Biscardi, Richard W.

1991-01-01

An electronic measurement circuit for high speed comparison of the relative amplitudes of a predetermined number of electrical input signals independent of variations in the magnitude of the sum of the signals. The circuit includes a high speed electronic switch that is operably connected to receive on its respective input terminals one of said electrical input signals and to have its common terminal serve as an input for a variable-gain amplifier-detector circuit that is operably connected to feed its output to a common terminal of a second high speed electronic switch. The respective terminals of the second high speed electronic switch are operably connected to a plurality of integrating sample and hold circuits, which in turn have their outputs connected to a summing logic circuit that is operable to develop first, second and third output voltages, the first output voltage being proportional to a predetermined ratio of sums and differences between the compared input signals, the second output voltage being proportional to a second summed ratio of predetermined sums and differences between said input signals, and the third output voltage being proportional to the sum of signals to the summing logic circuit. A servo system that is operably connected to receive said third output signal and compare it with a reference voltage to develop a slowly varying feedback voltage to control the variable-gain amplifier in said common amplifier-detector circuit in order to make said first and second output signals independent of variations in the magnitude of the sum of said input signals.

High stability amplifier

NASA Technical Reports Server (NTRS)

Adams, W. A.; Reinhardt, V. S. (Inventor)

1983-01-01

An electrical RF signal amplifier for providing high temperature stability and RF isolation and comprised of an integrated circuit voltage regulator, a single transistor, and an integrated circuit operational amplifier mounted on a circuit board such that passive circuit elements are located on side of the circuit board while the active circuit elements are located on the other side is described. The active circuit elements are embedded in a common heat sink so that a common temperature reference is provided for changes in ambient temperature. The single transistor and operational amplifier are connected together to form a feedback amplifier powered from the voltage regulator with transistor implementing primarily the desired signal gain while the operational amplifier implements signal isolation. Further RF isolation is provided by the voltage regulator which inhibits cross-talk from other like amplifiers powered from a common power supply. Input and output terminals consisting of coaxial connectors are located on the sides of a housing in which all the circuit components and heat sink are located.

Switch contact device for interrupting high current, high voltage, AC and DC circuits

DOEpatents

Via, Lester C.; Witherspoon, F. Douglas; Ryan, John M.

2005-01-04

A high voltage switch contact structure capable of interrupting high voltage, high current AC and DC circuits. The contact structure confines the arc created when contacts open to the thin area between two insulating surfaces in intimate contact. This forces the arc into the shape of a thin sheet which loses heat energy far more rapidly than an arc column having a circular cross-section. These high heat losses require a dramatic increase in the voltage required to maintain the arc, thus extinguishing it when the required voltage exceeds the available voltage. The arc extinguishing process with this invention is not dependent on the occurrence of a current zero crossing and, consequently, is capable of rapidly interrupting both AC and DC circuits. The contact structure achieves its high performance without the use of sulfur hexafluoride.

Improved Short-Circuit Protection for Power Cells in Series

NASA Technical Reports Server (NTRS)

Davies, Francis

2008-01-01

A scheme for protection against short circuits has been devised for series strings of lithium electrochemical cells that contain built-in short-circuit protection devices, which go into a high-resistance, current-limiting state when heated by excessive current. If cells are simply connected in a long series string to obtain a high voltage and a short circuit occurs, whichever short-circuit protection device trips first is exposed to nearly the full string voltage, which, typically, is large enough to damage the device. Depending on the specific cell design, the damage can defeat the protective function, cause a dangerous internal short circuit in the affected cell, and/or cascade to other cells. In the present scheme, reverse diodes rated at a suitably high current are connected across short series sub-strings, the lengths of which are chosen so that when a short-circuit protection device is tripped, the voltage across it does not exceed its rated voltage. This scheme preserves the resetting properties of the protective devices. It provides for bypassing of cells that fail open and limits cell reversal, though not as well as does the more-expensive scheme of connecting a diode across every cell.

Open circuit voltage-decay behavior in amorphous p-i-n solar due to injection

NASA Astrophysics Data System (ADS)

Smrity, Manu; Dhariwal, S. R.

2018-05-01

The paper deals with the basic recombination processes at the dangling bond and the band tail states at various levels of injection, expressed in terms of short-circuit current density and their role in the behavior of amorphous solar cells. As the level of injection increases the fill factor decreases whereas the open circuit voltage increases very slowly, showing a saturation tendency. Calculations have been done for two values of tail state densities and shows that with an increase in tail state densities both, the fill factor and open circuit voltage decreases, results an overall degradation of the solar cell.

Impulse commutating circuit with transformer to limit reapplied voltage

NASA Technical Reports Server (NTRS)

Mcconville, J. H.

1973-01-01

Silicon controlled rectifier opens circuit with currents flowing up to values of 30 amperes. Switching concept halves both current and voltage in middle of commutating cycle thereby lowering size and weight requirements. Commutating circuit can be turned on or off by command and will remain on in absence of load due to continuous gate.

30 CFR 75.800-2 - Approved circuit schemes.

Code of Federal Regulations, 2010 CFR

2010-07-01

... necessary protection to the circuits required by § 75.800: (a) Ground check relays may be used for undervoltage protection if the relay coils are designed to trip the circuit breaker when line voltage decreases to 40 percent to 60 percent of the nominal line voltage; (b) Ground trip relays on resistance...

30 CFR 75.800-2 - Approved circuit schemes.

Code of Federal Regulations, 2011 CFR

2011-07-01

... necessary protection to the circuits required by § 75.800: (a) Ground check relays may be used for undervoltage protection if the relay coils are designed to trip the circuit breaker when line voltage decreases to 40 percent to 60 percent of the nominal line voltage; (b) Ground trip relays on resistance...

A Design Methodology for Optoelectronic VLSI

DTIC Science & Technology

2007-01-01

current gets converted to a CMOS voltage level through a transimpedance amplifier circuit called a receiver. The output of the receiver is then...change the current flowing from the diode to a voltage that the logic inputs can use. That circuit is called a receiver. It is a transimpedance amplifier ...incorpo- rate random access memory circuits, SRAM or dynamic RAM (DRAM). These circuits use weak internal analog signals that are amplified by sense

A Film Canister Colorimeter

NASA Astrophysics Data System (ADS)

Gordon, James; James, Alan; Harman, Stephanie; Weiss, Kristen

2002-08-01

A low-cost, low-tech colorimeter was constructed from a film canister. The light source and filter monochromator was an interchangeable LED. The detector for this system was a voltage-divider circuit composed of a photoresistor in series with a fixed resistor. The student-constructed colorimeter was used to show the Beer–Lambert relationship between absorbance and concentration and to calculate the value of the molar absorptivity for permanganate at the wavelength emission maximum for the LED. Comparisons were made between this instrument and three commercial spectrometers and colorimeters.

Progress Check Module; Basic Electricity and Electronics Individualized Learning System. Progress Check Booklet.

ERIC Educational Resources Information Center

Bureau of Naval Personnel, Washington, DC.

The Progress Check Booklet is designed to be used by the student working in the programed course to determine if he has mastered the concepts in the course booklets on: electrical current; voltage; resistance; measuring current and voltage in series circuits; relationships of current, voltage, and resistance; parellel circuits; combination…

Powerplexer

NASA Technical Reports Server (NTRS)

Woods, J. M. (Inventor)

1973-01-01

An electrical power distribution system is described for use in providing different dc voltage levels. A circuit is supplied with DC voltage levels and commutates pulses for timed intervals onto a pair of distribution wires. The circuit is driven by a command generator which places pulses on the wires in a timed sequence. The pair of wires extend to voltage strippers connected to the various loads. The voltage strippers each respond to the pulse dc levels on the pair of wires and form different output voltages communicated to each load.

Technical Trend of Environment-friendly High Voltage Vacuum Circuit Breaker (VCB)

NASA Astrophysics Data System (ADS)

Okubo, Hitoshi

Vacuum Circuit Breakers (VCBs) have widely been used for low and medium voltage level, because of their high current interruption performance, maintenance free operations and environment-friendly characteristics. The VCB is now going to be applied to higher voltage systems for transmission and substation use. In this paper, the recent technical trend and future perspectives of high voltage VCBs are described, as well as their technical background.

Complementary Paired G4FETs as Voltage-Controlled NDR Device

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad; Chen, Suheng; Blalock, Ben; Britton, Chuck; Prothro, Ben; Vandersand, James; Schrimph, Ron; Cristoloveanu, Sorin; Akavardar, Kerem; Gentil, P.

2009-01-01

It is possible to synthesize a voltage-controlled negative-differential-resistance (NDR) device or circuit by use of a pair of complementary G4FETs (four-gate field-effect transistors). [For more information about G4FETs, please see the immediately preceding article]. As shown in Figure 1, the present voltage-controlled NDR device or circuit is an updated version of a prior NDR device or circuit, known as a lambda diode, that contains a pair of complementary junction field-effect transistors (JFETs). (The lambda diode is so named because its current-versus- voltage plot bears some resemblance to an upper-case lambda.) The present version can be derived from the prior version by substituting G4FETs for the JFETs and connecting both JFET gates of each G4FET together. The front gate terminals of the G4FETs constitute additional terminals (that is, terminals not available in the older JFET version) to which one can apply control voltages VN and VP. Circuits in which NDR devices have been used include (1) Schmitt triggers and (2) oscillators containing inductance/ capacitance (LC) resonant circuits. Figure 2 depicts such circuits containing G4FET NDR devices like that of Figure 1. In the Schmitt trigger shown here, the G4FET NDR is loaded with an ordinary inversion-mode, p-channel, metal oxide/semiconductor field-effect transistor (inversion-mode PMOSFET), the VN terminal of the G4FET NDR device is used as an input terminal, and the input terminals of the PMOSFET and the G4FET NDR device are connected. VP can be used as an extra control voltage (that is, a control voltage not available in a typical prior Schmitt trigger) for adjusting the pinch-off voltage of the p-channel G4FET and thereby adjusting the trigger-voltage window. In the oscillator, a G4FET NDR device is loaded with a conventional LC tank circuit. As in other LC NDR oscillators, oscillation occurs because the NDR counteracts the resistance in the tank circuit. The advantage of this G4FET-NDR LC oscillator over a conventional LC NDR oscillator is that one can apply a time-varying signal to one of the extra control input terminals (VN or VP) to modulate the conductance of the NDR device and thereby amplitude-modulate the output signal.

Domestic wastewater treatment and power generation in continuous flow air-cathode stacked microbial fuel cell: Effect of series and parallel configuration.

PubMed

Estrada-Arriaga, Edson Baltazar; Hernández-Romano, Jesús; García-Sánchez, Liliana; Guillén Garcés, Rosa Angélica; Bahena-Bahena, Erick Obed; Guadarrama-Pérez, Oscar; Moeller Chavez, Gabriela Eleonora

2018-05-15

In this study, a continuous flow stack consisting of 40 individual air-cathode MFC units was used to determine the performance of stacked MFC during domestic wastewater treatment operated with unconnected individual MFC and in series and parallel configuration. The voltages obtained from individual MFC units were of 0.08-1.1 V at open circuit voltage, while in series connection, the maximum power and current density were 2500 mW/m 2 and 500 mA/m 2 (4.9 V), respectively. In parallel connection, the maximum power and current density was 5.8 mW/m 2 and 24 mA/m 2 , respectively. When the cells were not connected to each other MFC unit, the main bacterial species found in the anode biofilms were Bacillus and Lysinibacillus. After switching from unconnected to series and parallel connections, the most abundant species in the stacked MFC were Pseudomonas aeruginosa, followed by different Bacilli classes. This study demonstrated that when the stacked MFC was switched from unconnected to series and parallel connections, the pollutants removal, performance electricity and microbial community changed significantly. Voltages drops were observed in the stacked MFC, which was mainly limited by the cathodes. These voltages loss indicated high resistances within the stacked MFC, generating a parasitic cross current. Copyright © 2018 Elsevier Ltd. All rights reserved.

Annealing effects on hydrogenated diamond NOR logic circuits

NASA Astrophysics Data System (ADS)

Liu, J. W.; Oosato, H.; Liao, M. Y.; Imura, M.; Watanabe, E.; Koide, Y.

2018-04-01

Here, hydrogenated diamond (H-diamond) NOR logic circuits composed of two p-type enhancement-mode (E-mode) metal-oxide-semiconductor field-effect-transistors (MOSFETs) and a load resistor are fabricated and characterized. The fabrication process and the annealing effect on the electrical properties of the NOR logic circuit are demonstrated. There are distinct logical characteristics for the as-received and 300 °C annealed NOR logic circuits. When one or both input voltages for the E-mode MOSFETs are -10.0 V and "high" signals, output voltages respond 0 V and "low" signals. Instead, when both input voltages are 0 V and "low" signals, output voltage responds -10.0 V and a "high" signal. After annealing at 400 °C, the NOR logical characteristics are damaged, which is possibly attributed to the degradation of the H-diamond MOSFETs.

Microwave integrated circuit for Josephson voltage standards

NASA Technical Reports Server (NTRS)

Holdeman, L. B.; Toots, J.; Chang, C. C. (Inventor)

1980-01-01

A microwave integrated circuit comprised of one or more Josephson junctions and short sections of microstrip or stripline transmission line is fabricated from thin layers of superconducting metal on a dielectric substrate. The short sections of transmission are combined to form the elements of the circuit and particularly, two microwave resonators. The Josephson junctions are located between the resonators and the impedance of the Josephson junctions forms part of the circuitry that couples the two resonators. The microwave integrated circuit has an application in Josephson voltage standards. In this application, the device is asymmetrically driven at a selected frequency (approximately equal to the resonance frequency of the resonators), and a d.c. bias is applied to the junction. By observing the current voltage characteristic of the junction, a precise voltage, proportional to the frequency of the microwave drive signal, is obtained.

Magnetic-Flux-Compensated Voltage Divider

NASA Technical Reports Server (NTRS)

Mata, Carlos T.

2005-01-01

A magnetic-flux-compensated voltage-divider circuit has been proposed for use in measuring the true potential across a component that is exposed to large, rapidly varying electric currents like those produced by lightning strikes. An example of such a component is a lightning arrester, which is typically exposed to currents of the order of tens of kiloamperes, having rise times of the order of hundreds of nanoseconds. Traditional voltage-divider circuits are not designed for magnetic-flux-compensation: They contain uncompensated loops having areas large enough that the transient magnetic fluxes associated with large transient currents induce spurious voltages large enough to distort voltage-divider outputs significantly. A drawing of the proposed circuit was not available at the time of receipt of information for this article. What is known from a summary textual description is that the proposed circuit would contain a total of four voltage dividers: There would be two mixed dividers in parallel with each other and with the component of interest (e.g., a lightning arrester), plus two mixed dividers in parallel with each other and in series with the component of interest in the same plane. The electrical and geometric configuration would provide compensation for induced voltages, including those attributable to asymmetry in the volumetric density of the lightning or other transient current, canceling out the spurious voltages and measuring the true voltage across the component.

Apparatus and Method for Compensating for Process, Voltage, and Temperature Variation of the Time Delay of a Digital Delay Line

NASA Technical Reports Server (NTRS)

Seefeldt, James (Inventor); Feng, Xiaoxin (Inventor); Roper, Weston (Inventor)

2013-01-01

A process, voltage, and temperature (PVT) compensation circuit and a method of continuously generating a delay measure are provided. The compensation circuit includes two delay lines, each delay line providing a delay output. The two delay lines may each include a number of delay elements, which in turn may include one or more current-starved inverters. The number of delay lines may differ between the two delay lines. The delay outputs are provided to a combining circuit that determines an offset pulse based on the two delay outputs and then averages the voltage of the offset pulse to determine a delay measure. The delay measure may be one or more currents or voltages indicating an amount of PVT compensation to apply to input or output signals of an application circuit, such as a memory-bus driver, dynamic random access memory (DRAM), a synchronous DRAM, a processor or other clocked circuit.

Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits.

PubMed

Chen, Bingyan; Zhang, Panpan; Ding, Li; Han, Jie; Qiu, Song; Li, Qingwen; Zhang, Zhiyong; Peng, Lian-Mao

2016-08-10

Top-gated p-type field-effect transistors (FETs) have been fabricated in batch based on carbon nanotube (CNT) network thin films prepared from CNT solution and present high yield and highly uniform performance with small threshold voltage distribution with standard deviation of 34 mV. According to the property of FETs, various logical and arithmetical gates, shifters, and d-latch circuits were designed and demonstrated with rail-to-rail output. In particular, a 4-bit adder consisting of 140 p-type CNT FETs was demonstrated with higher packing density and lower supply voltage than other published integrated circuits based on CNT films, which indicates that CNT based integrated circuits can reach to medium scale. In addition, a 2-bit multiplier has been realized for the first time. Benefitted from the high uniformity and suitable threshold voltage of CNT FETs, all of the fabricated circuits based on CNT FETs can be driven by a single voltage as small as 2 V.

ZERO SUPPRESSION FOR RECORDERS

DOEpatents

Fort, W.G.S.

1958-12-30

A zero-suppression circuit for self-balancing recorder instruments is presented. The essential elements of the circuit include a converter-amplifier having two inputs, one for a reference voltage and the other for the signal voltage under analysis, and a servomotor with two control windings, one coupled to the a-c output of the converter-amplifier and the other receiving a reference input. Each input circuit to the converter-amplifier has a variable potentiometer and the sliders of the potentiometer are ganged together for movement by the servoinotor. The particular noveity of the circuit resides in the selection of resistance values for the potentiometer and a resistor in series with the potentiometer of the signal circuit to ensure the full value of signal voltage variation is impressed on a recorder mechanism driven by servomotor.

Design and Implementation of an Intrinsically Safe Liquid-Level Sensor Using Coaxial Cable

PubMed Central

Jin, Baoquan; Liu, Xin; Bai, Qing; Wang, Dong; Wang, Yu

2015-01-01

Real-time detection of liquid level in complex environments has always been a knotty issue. In this paper, an intrinsically safe liquid-level sensor system for flammable and explosive environments is designed and implemented. The poly vinyl chloride (PVC) coaxial cable is chosen as the sensing element and the measuring mechanism is analyzed. Then, the capacitance-to-voltage conversion circuit is designed and the expected output signal is achieved by adopting parameter optimization. Furthermore, the experimental platform of the liquid-level sensor system is constructed, which involves the entire process of measuring, converting, filtering, processing, visualizing and communicating. Additionally, the system is designed with characteristics of intrinsic safety by limiting the energy of the circuit to avoid or restrain the thermal effects and sparks. Finally, the approach of the piecewise linearization is adopted in order to improve the measuring accuracy by matching the appropriate calibration points. The test results demonstrate that over the measurement range of 1.0 m, the maximum nonlinearity error is 0.8% full-scale span (FSS), the maximum repeatability error is 0.5% FSS, and the maximum hysteresis error is reduced from 0.7% FSS to 0.5% FSS by applying software compensation algorithms. PMID:26029949

Design and implementation of an intrinsically safe liquid-level sensor using coaxial cable.

PubMed

Jin, Baoquan; Liu, Xin; Bai, Qing; Wang, Dong; Wang, Yu

2015-05-28

Real-time detection of liquid level in complex environments has always been a knotty issue. In this paper, an intrinsically safe liquid-level sensor system for flammable and explosive environments is designed and implemented. The poly vinyl chloride (PVC) coaxial cable is chosen as the sensing element and the measuring mechanism is analyzed. Then, the capacitance-to-voltage conversion circuit is designed and the expected output signal is achieved by adopting parameter optimization. Furthermore, the experimental platform of the liquid-level sensor system is constructed, which involves the entire process of measuring, converting, filtering, processing, visualizing and communicating. Additionally, the system is designed with characteristics of intrinsic safety by limiting the energy of the circuit to avoid or restrain the thermal effects and sparks. Finally, the approach of the piecewise linearization is adopted in order to improve the measuring accuracy by matching the appropriate calibration points. The test results demonstrate that over the measurement range of 1.0 m, the maximum nonlinearity error is 0.8% full-scale span (FSS), the maximum repeatability error is 0.5% FSS, and the maximum hysteresis error is reduced from 0.7% FSS to 0.5% FSS by applying software compensation algorithms.

Nonlinear interface between the piezoelectric harvesting structure and the modulating circuit of an energy harvester with a real storage battery.

PubMed

Hu, Yuantai; Xue, Huan; Hu, Ting; Hu, Hongping

2008-01-01

This paper studies the performance of an energy harvester with a piezoelectric bimorph (PB) and a real electrochemical battery (ECB), both are connected as an integrated system through a rectified dc-dc converter (DDC). A vibrating PB can scavenge energy from the operating environment by the electromechanical coupling. A DDC can effectively match the optimal output voltage of the harvesting structure to the battery voltage. To raise the output power density of PB, a synchronized switch harvesting inductor (SSHI) is used in parallel with the harvesting structure to reverse the voltage through charge transfer between the output electrodes at the transition moments from closed-to open-circuit. Voltage reversal results in earlier arrival of rectifier conduction because the output voltage phases of any two adjacent closed-circuit states are just opposite each other. In principle, a PB is with a smaller, flexural stiffness under closed-circuit condition than under open-circuit condition. Thus, the PB subjected to longer closed-circuit condition will be easier to be accelerated. A larger flexural velocity makes the PB to deflect with larger amplitude, which implies that more mechanical energy will be converted into an electric one. Nonlinear interface between the vibrating PB and the modulating circuit is analyzed in detail, and the effects of SSHI and DDC on the charging efficiency of the storage battery are researched numerically. It was found that the introduction of a DDC in the modulating circuit and an SSHI in the harvesting structure can raise the charging efficiency by several times.

Mechanisms limiting the performance of large grain polycrystalline silicon solar cells

NASA Technical Reports Server (NTRS)

Culik, J. S.; Alexander, P.; Dumas, K. A.; Wohlgemuth, J. W.

1984-01-01

The open-circuit voltage and short-circuit current of large-grain (1 to 10 mm grain diameter) polycrystalline silicon solar cells is determined by the minority-carrier diffusion length within the bulk of the grains. This was demonstrated by irradiating polycrystalline and single-crystal (Czochralski) silicon solar cells with 1 MeV electrons to reduce their bulk lifetime. The variation of short-circuit current with minority-carrier diffusion length for the polycrystalline solar cells is identical to that of the single-crystal solar cells. The open-circuit voltage versus short-circuit current characteristic of the polycrystalline solar cells for reduced diffusion lengths is also identical to that of the single-crystal solar cells. The open-circuit voltage of the polycrystalline solar cells is a strong function of quasi-neutral (bulk) recombination, and is reduced only slightly, if at all, by grain-boundary recombination.

Analysis and elimination method of the effects of cables on LVRT testing for offshore wind turbines

NASA Astrophysics Data System (ADS)

Jiang, Zimin; Liu, Xiaohao; Li, Changgang; Liu, Yutian

2018-02-01

The current state, characteristics and necessity of the low voltage ride through (LVRT) on-site testing for grid-connected offshore wind turbines are introduced firstly. Then the effects of submarine cables on the LVRT testing are analysed based on the equivalent circuit of the testing system. A scheme for eliminating the effects of cables on the proposed LVRT testing method is presented. The specified voltage dips are guaranteed to be in compliance with the testing standards by adjusting the ratio between the current limiting impedance and short circuit impedance according to the steady voltage relationship derived from the equivalent circuit. Finally, simulation results demonstrate that the voltage dips at the high voltage side of wind turbine transformer satisfy the requirements of testing standards.

Nanowire NMOS Logic Inverter Characterization.

PubMed

Hashim, Yasir

2016-06-01

This study is the first to demonstrate characteristics optimization of nanowire N-Channel Metal Oxide Semiconductor (NW-MOS) logic inverter. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimization. A computer-based model used to produce static characteristics of NW-NMOS logic inverter. In this research two circuit configuration of NW-NMOS inverter was studied, in first NW-NMOS circuit, the noise margin for (low input-high output) condition was very low. For second NMOS circuit gives excellent noise margins, and results indicate that optimization depends on applied voltage to the inverter. Increasing gate to source voltage with (2/1) nanowires ratio results better noise margins. Increasing of applied DC load transistor voltage tends to increasing in decreasing noise margins; decreasing this voltage will improve noise margins significantly.

Module Six: Parallel Circuits; Basic Electricity and Electronics Individualized Learning System.

ERIC Educational Resources Information Center

Bureau of Naval Personnel, Washington, DC.

In this module the student will learn the rules that govern the characteristics of parallel circuits; the relationships between voltage, current, resistance and power; and the results of common troubles in parallel circuits. The module is divided into four lessons: rules of voltage and current, rules for resistance and power, variational analysis,…

Network for minimizing current imbalances in a faradaic battery

DOEpatents

Wozniak, Walter; Haskins, Harold J.

1994-01-01

A circuit for connecting a faradaic battery with circuitry for monitoring the condition of the battery includes a plurality of voltage divider networks providing battery voltage monitoring nodes and includes compensating resistors connected with the networks to maintain uniform discharge currents through the cells of the battery. The circuit also provides a reduced common mode voltage requirement for the monitoring circuitry by referencing the divider networks to one-half the battery voltage.

A low-frequency MEMS piezoelectric energy harvester with a rectangular hole based on bulk PZT film

NASA Astrophysics Data System (ADS)

Tian, Yingwei; Li, Guimiao; Yi, Zhiran; Liu, Jingquan; Yang, Bin

2018-06-01

This paper presents a high performance piezoelectric energy harvester (PEH) with a rectangular hole to work at low-frequency. This PEH used thinned bulk PZT film on flexible phosphor bronze, and its structure included piezoelectric layer, supporting layer and proof mass to reduce the resonant frequency of the device. Here, thinned bulk PZT thick film was used as piezoelectric layer due to its high piezoelectric coefficient. A Phosphor bronze was deployed as supporting layer because it had better flexibility compared to silicon and could work under high acceleration ambient with good durability. The maximum open-circuit voltage of the PEH was 15.7 V at low resonant frequency of 34.3 Hz when the input vibration acceleration was 1.5 g (g = 9.81 m/s2). Moreover, the maximum output power, the output power density and the actually current at the same acceleration were 216.66 μW, 1713.58 μW/cm3 and 170 μA, respectively, when the optimal matched resistance of 60 kΩ was connected. The fabricated PEH scavenged the vibration energy of the vacuum compression pump and generated the maximum output voltage of 1.19 V.

Optimization of discharge circuit of the TEA CO II laser with two discharge channels

NASA Astrophysics Data System (ADS)

Hu, Xiao Yong; Zhang, LiLi; Ren, DeMing; Qu, YanChen; Zhao, WeiJiang; Song, BaoAn

2007-01-01

In order to achieve the highest peak power of radiation pulse and highest output energy, the primary circuit parameters are investigated to optimize the discharge circuit performance of the laser. The structure and the discharge circuit of the laser are discussed at first. To realize synchronous discharge in two discharge channels, the conjunct electrode device for two pairs of discharge electrodes is designed. Finally, the results of the experiments on the primary circuit parameters are given. The discharge is most stable at a pressure of 5.33×10 4Pa when the pressure of gaseous mixture CO II:N II:He=1:1:3 is changed from 2.67×10 4 Pa to 6.67×10 4 Pa. The ratio of storage capacitance to peak capacitance is chosen to be about 1.5-7/3, because residual voltage is lower on this condition and residual voltage is adverse to discharge. When the inductance 330μH is used, the homogeneous glow discharge in a widest voltage range is obtained. The duration of when the stimuli voltage is increased in homogeneous glow discharge condition. The discharge circuit allows charge and discharge and the magnitude of residual voltage decrease the homogeneous glow discharge in a wide range of pressure of gaseous mixture when these circuit parameters are used. Thus it offers reference to the improvement of output characteristic of TEA CO II laser with two discharge channels.

Design and Implementation of Readout Circuit with Threshold Voltage Compensation on Glass Substrate for Touch Panel Applications

NASA Astrophysics Data System (ADS)

Lin, Yu-Ta; Ker, Ming-Dou; Wang, Tzu-Ming

2011-03-01

A new on-panel readout circuit with threshold voltage compensation for capacitive sensor in low temperature polycrystalline silicon (poly-Si) thin-film transistor (LTPS-TFT) process has been proposed. In order to compensate the threshold voltage variation from LTPS process variation, the proposed readout circuit applies a novel compensation approach with switch capacitor technique. In addition, a 4-bit analog-to-digital converter (ADC) is added to identify different sensed capacitor values and further enhances the overall resolution of touch panel.

Detonation control

DOEpatents

Mace, Jonathan L.; Seitz, Gerald J.; Bronisz, Lawrence E.

2016-10-25

Detonation control modules and detonation control circuits are provided herein. A trigger input signal can cause a detonation control module to trigger a detonator. A detonation control module can include a timing circuit, a light-producing diode such as a laser diode, an optically triggered diode, and a high-voltage capacitor. The trigger input signal can activate the timing circuit. The timing circuit can control activation of the light-producing diode. Activation of the light-producing diode illuminates and activates the optically triggered diode. The optically triggered diode can be coupled between the high-voltage capacitor and the detonator. Activation of the optically triggered diode causes a power pulse to be released from the high-voltage capacitor that triggers the detonator.

Faster Evolution of More Multifunctional Logic Circuits

NASA Technical Reports Server (NTRS)

Stoica, Adrian; Zebulum, Ricardo

2005-01-01

A modification in a method of automated evolutionary synthesis of voltage-controlled multifunctional logic circuits makes it possible to synthesize more circuits in less time. Prior to the modification, the computations for synthesizing a four-function logic circuit by this method took about 10 hours. Using the method as modified, it is possible to synthesize a six-function circuit in less than half an hour. The concepts of automated evolutionary synthesis and voltage-controlled multifunctional logic circuits were described in a number of prior NASA Tech Briefs articles. To recapitulate: A circuit is designed to perform one of several different logic functions, depending on the value of an applied control voltage. The circuit design is synthesized following an automated evolutionary approach that is so named because it is modeled partly after the repetitive trial-and-error process of biological evolution. In this process, random populations of integer strings that encode electronic circuits play a role analogous to that of chromosomes. An evolved circuit is tested by computational simulation (prior to testing in real hardware to verify a final design). Then, in a fitness-evaluation step, responses of the circuit are compared with specifications of target responses and circuits are ranked according to how close they come to satisfying specifications. The results of the evaluation provide guidance for refining designs through further iteration.

Inexpensive system protects megawatt resistance-heating furnace against high-voltage surges

NASA Technical Reports Server (NTRS)

Stearns, E. J.

1971-01-01

Coolant gas extinguishes arcing across the break in a heater element. Air-gap shunt which bypasses high voltage impressed across the circuit prevents damage if the resistance elements break and open the inductive circuit.

Investigation of short-circuit failure mechanisms of SiC MOSFETs by varying DC bus voltage

NASA Astrophysics Data System (ADS)

Namai, Masaki; An, Junjie; Yano, Hiroshi; Iwamuro, Noriyuki

2018-07-01

In this study, the experimental evaluation and numerical analysis of short-circuit mechanisms of 1200 V SiC planar and trench MOSFETs were conducted at various DC bus voltages from 400 to 800 V. Investigation of the impact of DC bus voltage on short-circuit capability yielded results that are extremely useful for many existing power electronics applications. Three failure mechanisms were identified in this study: thermal runaway, MOS channel current following device turn-off, and rupture of the gate oxide layer (gate oxide layer damage). The SiC MOSFETs experienced lattice temperatures exceeding 1000 K during the short-circuit transient; as Si insulated gate bipolar transistors (IGBTs) are not typically subject to such temperatures, the MOSFETs experienced distinct failure modes, and the mode experienced was significantly influenced by the DC bus voltage. In conclusion, suggestions regarding the SiC MOSFET design and operation methods that would enhance device robustness are proposed.

ELECTRONIC MULTIPLIER CIRCUIT

DOEpatents

Thomas, R.E.

1959-08-25

An electronic multiplier circuit is described in which an output voltage having an amplitude proportional to the product or quotient of the input signals is accomplished in a novel manner which facilitates simplicity of circuit construction and a high degree of accuracy in accomplishing the multiplying and dividing function. The circuit broadly comprises a multiplier tube in which the plate current is proportional to the voltage applied to a first control grid multiplied by the difference between voltage applied to a second control grid and the voltage applied to the first control grid. Means are provided to apply a first signal to be multiplied to the first control grid together with means for applying the sum of the first signal to be multiplied and a second signal to be multiplied to the second control grid whereby the plate current of the multiplier tube is proportional to the product of the first and second signals to be multiplied.

Recombination in polymer-fullerene bulk heterojunction solar cells

NASA Astrophysics Data System (ADS)

Cowan, Sarah R.; Roy, Anshuman; Heeger, Alan J.

2010-12-01

Recombination of photogenerated charge carriers in polymer bulk heterojunction (BHJ) solar cells reduces the short circuit current (Jsc) and the fill factor (FF). Identifying the mechanism of recombination is, therefore, fundamentally important for increasing the power conversion efficiency. Light intensity and temperature-dependent current-voltage measurements on polymer BHJ cells made from a variety of different semiconducting polymers and fullerenes show that the recombination kinetics are voltage dependent and evolve from first-order recombination at short circuit to bimolecular recombination at open circuit as a result of increasing the voltage-dependent charge carrier density in the cell. The “missing 0.3 V” inferred from comparison of the band gaps of the bulk heterojunction materials and the measured open-circuit voltage at room-temperature results from the temperature dependence of the quasi-Fermi levels in the polymer and fullerene domains—a conclusion based on the fundamental statistics of fermions.

Optimizing MOS-gated thyristor using voltage-based equivalent circuit model for designing steep-subthreshold-slope PN-body-tied silicon-on-insulator FET

NASA Astrophysics Data System (ADS)

Ueda, Daiki; Takeuchi, Kiyoshi; Kobayashi, Masaharu; Hiramoto, Toshiro

2018-04-01

A new circuit model that provides a clear guide on designing a MOS-gated thyristor (MGT) is reported. MGT plays a significant role in achieving a steep subthreshold slope of a PN-body tied silicon-on-insulator (SOI) FET (PNBTFET), which is an SOI MOSFET merged with an MGT. The effects of design parameters on MGT and the proposed equivalent circuit model are examined to determine how to regulate the voltage response of MGT and how to suppress power dissipation. It is demonstrated that MGT with low threshold voltages, small hysteresis widths, and small power dissipation can be designed by tuning design parameters. The temperature dependence of MGT is also examined, and it is confirmed that hysteresis width decreases with the average threshold voltage kept nearly constant as temperature rises. The equivalent circuit model can be conveniently used to design low-power PNBTFET.

Origin of Reduced Open-Circuit Voltage in Highly Efficient Small-Molecule-Based Solar Cells upon Solvent Vapor Annealing.

PubMed

Deng, Wanyuan; Gao, Ke; Yan, Jun; Liang, Quanbin; Xie, Yuan; He, Zhicai; Wu, Hongbin; Peng, Xiaobin; Cao, Yong

2018-03-07

In this study, we demonstrate that remarkably reduced open-circuit voltage in highly efficient organic solar cells (OSCs) from a blend of phenyl-C 61 -butyric acid methyl ester and a recently developed conjugated small molecule (DPPEZnP-THD) upon solvent vapor annealing (SVA) is due to two independent sources: increased radiative recombination and increased nonradiative recombination. Through the measurements of electroluminescence due to the emission of the charge-transfer state and photovoltaic external quantum efficiency measurement, we can quantify that the open-circuit voltage losses in a device with SVA due to the radiative recombination and nonradiative recombination are 0.23 and 0.31 V, respectively, which are 0.04 and 0.07 V higher than those of the as-cast device. Despite of the reduced open-circuit voltage, the device with SVA exhibited enhanced dissociation of charge-transfer excitons, leading to an improved short-circuit current density and a remarkable power conversion efficiency (PCE) of 9.41%, one of the best for solution-processed OSCs based on small-molecule donor materials. Our study also clearly shows that removing the nonradiative recombination pathways and/or suppressing energetic disorder in the active layer would result in more long-lived charge carriers and enhanced open-circuit voltage, which are prerequisites for further improving the PCE.

Piezoelectric MEMS switch to activate event-driven wireless sensor nodes

NASA Astrophysics Data System (ADS)

Nogami, H.; Kobayashi, T.; Okada, H.; Makimoto, N.; Maeda, R.; Itoh, T.

2013-09-01

We have developed piezoelectric microelectromechanical systems (MEMS) switches and applied them to ultra-low power wireless sensor nodes, to monitor the health condition of chickens. The piezoelectric switches have ‘S’-shaped piezoelectric cantilevers with a proof mass. Since the resonant frequency of the piezoelectric switches is around 24 Hz, we have utilized their superharmonic resonance to detect chicken movements as low as 5-15 Hz. When the vibration frequency is 4, 6 and 12 Hz, the piezoelectric switches vibrate at 0.5 m s-2 and generate 3-5 mV output voltages with superharmonic resonance. In order to detect such small piezoelectric output voltages, we employ comparator circuits that can be driven at low voltages, which can set the threshold voltage (Vth) from 1 to 31 mV with a 1 mV increment. When we set Vth at 4 mV, the output voltages of the piezoelectric MEMS switches vibrate below 15 Hz with amplitudes above 0.3 m s-2 and turn on the comparator circuits. Similarly, by setting Vth at 5 mV, the output voltages turn on the comparator circuits with vibrations above 0.4 m s-2. Furthermore, setting Vth at 10 mV causes vibrations above 0.5 m s-2 that turn on the comparator circuits. These results suggest that we can select small or fast chicken movements to utilize piezoelectric MEMS switches with comparator circuits.

Transistor analogs of emergent iono-neuronal dynamics.

PubMed

Rachmuth, Guy; Poon, Chi-Sang

2008-06-01

Neuromorphic analog metal-oxide-silicon (MOS) transistor circuits promise compact, low-power, and high-speed emulations of iono-neuronal dynamics orders-of-magnitude faster than digital simulation. However, their inherently limited input voltage dynamic range vs power consumption and silicon die area tradeoffs makes them highly sensitive to transistor mismatch due to fabrication inaccuracy, device noise, and other nonidealities. This limitation precludes robust analog very-large-scale-integration (aVLSI) circuits implementation of emergent iono-neuronal dynamics computations beyond simple spiking with limited ion channel dynamics. Here we present versatile neuromorphic analog building-block circuits that afford near-maximum voltage dynamic range operating within the low-power MOS transistor weak-inversion regime which is ideal for aVLSI implementation or implantable biomimetic device applications. The fabricated microchip allowed robust realization of dynamic iono-neuronal computations such as coincidence detection of presynaptic spikes or pre- and postsynaptic activities. As a critical performance benchmark, the high-speed and highly interactive iono-neuronal simulation capability on-chip enabled our prompt discovery of a minimal model of chaotic pacemaker bursting, an emergent iono-neuronal behavior of fundamental biological significance which has hitherto defied experimental testing or computational exploration via conventional digital or analog simulations. These compact and power-efficient transistor analogs of emergent iono-neuronal dynamics open new avenues for next-generation neuromorphic, neuroprosthetic, and brain-machine interface applications.

Differential Amplifier with Current-Mirror Load: Influence of Current Gain, Early Voltage, and Supply Voltage on the DC Output Voltage

ERIC Educational Resources Information Center

Paulik, G. F.; Mayer, R. P.

2012-01-01

A differential amplifier composed of an emitter-coupled pair is useful as an example in lecture presentations and laboratory experiments in electronic circuit analysis courses. However, in an active circuit with zero input load V[subscript id], both laboratory measurements and PSPICE and LTspice simulation results for the output voltage…

METHOD OF LOCATING GROUNDS

DOEpatents

Macleish, K.G.

1958-02-11

ABS>This patent presents a method for locating a ground in a d-c circult having a number of parallel branches connected across a d-c source or generator. The complete method comprises the steps of locating the ground with reference to the mildpoint of the parallel branches by connecting a potentiometer across the terminals of the circuit and connecting the slider of the potentiometer to ground through a current indicating instrument, adjusting the slider to right or left of the mildpoint so as to cause the instrument to indicate zero, connecting the terminal of the network which is farthest from the ground as thus indicated by the potentiometer to ground through a condenser, impressing a ripple voltage on the circuit, and then measuring the ripple voltage at the midpoint of each parallel branch to find the branch in which is the lowest value of ripple voltage, and then measuring the distribution of the ripple voltage along this branch to determine the point at which the ripple voltage drops off to zero or substantially zero due to the existence of a ground. The invention has particular application where a circuit ground is present which will disappear if the normal circuit voltage is removed.

Symmetry-breaking charge transfer in a zinc chlorodipyrrin acceptor for high open circuit voltage organic photovoltaics.

PubMed

Bartynski, Andrew N; Gruber, Mark; Das, Saptaparna; Rangan, Sylvie; Mollinger, Sonya; Trinh, Cong; Bradforth, Stephen E; Vandewal, Koen; Salleo, Alberto; Bartynski, Robert A; Bruetting, Wolfgang; Thompson, Mark E

2015-04-29

Low open-circuit voltages significantly limit the power conversion efficiency of organic photovoltaic devices. Typical strategies to enhance the open-circuit voltage involve tuning the HOMO and LUMO positions of the donor (D) and acceptor (A), respectively, to increase the interfacial energy gap or to tailor the donor or acceptor structure at the D/A interface. Here, we present an alternative approach to improve the open-circuit voltage through the use of a zinc chlorodipyrrin, ZCl [bis(dodecachloro-5-mesityldipyrrinato)zinc], as an acceptor, which undergoes symmetry-breaking charge transfer (CT) at the donor/acceptor interface. DBP/ZCl cells exhibit open-circuit voltages of 1.33 V compared to 0.88 V for analogous tetraphenyldibenzoperyflanthrene (DBP)/C60-based devices. Charge transfer state energies measured by Fourier-transform photocurrent spectroscopy and electroluminescence show that C60 forms a CT state of 1.45 ± 0.05 eV in a DBP/C60-based organic photovoltaic device, while ZCl as acceptor gives a CT state energy of 1.70 ± 0.05 eV in the corresponding device structure. In the ZCl device this results in an energetic loss between E(CT) and qV(OC) of 0.37 eV, substantially less than the 0.6 eV typically observed for organic systems and equal to the recombination losses seen in high-efficiency Si and GaAs devices. The substantial increase in open-circuit voltage and reduction in recombination losses for devices utilizing ZCl demonstrate the great promise of symmetry-breaking charge transfer in organic photovoltaic devices.

Development of compact rapid charging power supply for capacitive energy storage in pulsed power drivers.

PubMed

Sharma, Surender Kumar; Shyam, Anurag

2015-02-01

High energy capacitor bank is used for primary electrical energy storage in pulsed power drivers. The capacitors used in these pulsed power drivers have low inductance, low internal resistance, and less dc life, so it has to be charged rapidly and immediately discharged into the load. A series resonant converter based 45 kV compact power supply is designed and developed for rapid charging of the capacitor bank with constant charging current up to 150 mA. It is short circuit proof, and zero current switching technique is used to commute the semiconductor switch. A high frequency resonant inverter switching at 10 kHz makes the overall size small and reduces the switching losses. The output current of the power supply is limited by constant on-time and variable frequency switching control technique. The power supply is tested by charging the 45 kV/1.67 μF and 15 kV/356 μF capacitor banks. It has charged the capacitor bank up to rated voltage with maximum charging current of 150 mA and the average charging rate of 3.4 kJ/s. The output current of the power supply is limited by reducing the switching frequency at 5 kHz, 3.3 kHz, and 1.7 kHz and tested with 45 kV/1.67 μF capacitor bank. The protection circuit is included in the power supply for over current, under voltage, and over temperature. The design details and the experimental testing results of the power supply for resonant current, output current, and voltage traces of the power supply with capacitive, resistive, and short circuited load are presented and discussed.

Fabrication of thermoelectric modules with Mg2Si and SrRuO3 by the spark plasma sintering method

NASA Astrophysics Data System (ADS)

Nishio, Keishi; Sawada, Yukie; Arai, Koya; Sakamoto, Tatsuya; Kogo, Yasuo; Iida, Tsutomu

2012-06-01

Thermoelectric (TE) modules with a π structure were fabricated by the spark plasma sintering method. The modules were composed of SrRuO3 for the p-type semiconductor, Mg2Si for the n-type semiconductor, and Ni for the electrodes. The SrRuO3 powder was synthesized using the metal-citric-acid complex decomposition method. Mg2Si bulk prepared by meltquenching was ground into powder and sieved to a particle size of 75 μm or less. To obtain the sintered body of SrRuO3, the powder was sintered using spark plasma sintering (SPS). For SPS, the precursor powder was placed in a graphite die and kept at that temperature under a uni-axial pressure of 50 MPa and in vacuum conditions (less than 7 Pa). After sintering by SPS, the ceramic sample was annealed at 1573K in air because the SrRuO3 was slightly reduced during the SPS process in the graphite die. These TE sintered bodies were cut and polished. The dimensions of the samples used for fabrication of the p-type parts of the TE modules were 4.50×9.50×7.45 mm3 and those for the n-type parts were 5.50×11.45×7.45 mm3. Pressed Ni powder was put between these TE materials and the Ni electrodes in order to connect them together, and electrical power was passed through the electrodes from the SPS equipment. The output power under temperature differences ΔT ranging from 100 to 500 K was measured. The open-circuit voltage, maximum output current and maximum output power increased with increasing temperature difference ΔT. The open-circuit voltage of the single module was 91.0 mV, and the maximum output current and maximum output power were 5000 mA and 110 mW at ΔT=500 K, respectively.

PHASE DETECTOR

DOEpatents

Kippenhan, D.O.

1959-09-01

A phase detector circuit is described for use at very high frequencies of the order of 50 megacycles. The detector circuit includes a pair of rectifiers inverted relative to each other. One voltage to be compared is applied to the two rectifiers in phase opposition and the other voltage to be compared is commonly applied to the two rectifiers. The two result:ng d-c voltages derived from the rectifiers are combined in phase opposition to produce a single d-c voltage having amplitude and polarity characteristics dependent upon the phase relation between the signals to be compared. Principal novelty resides in the employment of a half-wave transmission line to derive the phase opposing signals from the first voltage to be compared for application to the two rectifiers in place of the transformer commonly utilized for such purpose in phase detector circuits for operation at lower frequency.

High voltage power supply

NASA Technical Reports Server (NTRS)

Ruitberg, A. P.; Young, K. M. (Inventor)

1985-01-01

A high voltage power supply is formed by three discrete circuits energized by a battery to provide a plurality of concurrent output signals floating at a high output voltage on the order of several tens of kilovolts. In the first two circuits, the regulator stages are pulse width modulated and include adjustable ressistances for varying the duty cycles of pulse trains provided to corresponding oscillator stages while the third regulator stage includes an adjustable resistance for varying the amplitude of a steady signal provided to a third oscillator stage. In the first circuit, the oscillator, formed by a constant current drive network and a tuned resonant network included a step up transformer, is coupled to a second step up transformer which, in turn, supplies an amplified sinusoidal signal to a parallel pair of complementary poled rectifying, voltage multiplier stages to generate the high output voltage.

Fabrication and Characterization of Organic Photovoltaic Cell using Keithley 2400 SMU for efficient solar cell

NASA Astrophysics Data System (ADS)

Hafeez, Hafeez Y.; Iro, Zaharaddeen S.; Adam, Bala I.; Mohammed, J.

2018-04-01

An organic solar cell device or organic photovoltaic cell (OPV) is a class of solar cell that uses conductive organic polymers or small organic molecules for light absorption and charge transport. In this study, we fabricate and characterize an organic photovoltaic cell device and estimated important parameters of the device such as Open Circuit Voltage Voc of 0.28V, Short-Circuit Current Isc of 4.0 × 10-5 A, Maximum Power Pmax of 2.4 × 10-6 W, Fill Factor of 0.214 and the energy conversion efficiency of η=0.00239% were tested using Keithley 2400,source meter under A.M 1.5 (1000/m2) illumination from a Newport Class A solar simulator. Also the I-V characteristics for OPV were drawn.

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO 2 Contact

DOE PAGES

Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; ...

2014-09-25

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (~10 nm) of amorphous TiO 2 deposited at 120°C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. Lastly, a hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency ofmore » 19.2%.« less

The 7.5 kW solar array simulator

NASA Technical Reports Server (NTRS)

Robson, R. R.

1975-01-01

A high power solar array simulator capable of providing the input power to simultaneously operate two 30 cm diameter ion thruster power processors was designed, fabricated, and tested. The maximum power point is set to between 150 and 7500 watts representing an open circuit voltage from 50 to 300 volts and a short circuit current from 4 to 36 amps. Illuminated solar cells are used as the control element to provide a true solar cell characteristic and permit the option of simulating changes in this characteristic due to variations in solar intensity and/or temperature of the solar array. This is accomplished by changing the illumination and/or temperature of the control cells. The response of the output to a step change in load closely approximates that of an actual solar array.

Controlled conjugated backbone twisting for an increased open-circuit voltage while having a high short-circuit current in poly(hexylthiophene) derivatives.

PubMed

Ko, Sangwon; Hoke, Eric T; Pandey, Laxman; Hong, Sanghyun; Mondal, Rajib; Risko, Chad; Yi, Yuanping; Noriega, Rodrigo; McGehee, Michael D; Brédas, Jean-Luc; Salleo, Alberto; Bao, Zhenan

2012-03-21

Conjugated polymers with nearly planar backbones have been the most commonly investigated materials for organic-based electronic devices. More twisted polymer backbones have been shown to achieve larger open-circuit voltages in solar cells, though with decreased short-circuit current densities. We systematically impose twists within a family of poly(hexylthiophene)s and examine their influence on the performance of polymer:fullerene bulk heterojunction (BHJ) solar cells. A simple chemical modification concerning the number and placement of alkyl side chains along the conjugated backbone is used to control the degree of backbone twisting. Density functional theory calculations were carried out on a series of oligothiophene structures to provide insights on how the sterically induced twisting influences the geometric, electronic, and optical properties. Grazing incidence X-ray scattering measurements were performed to investigate how the thin-film packing structure was affected. The open-circuit voltage and charge-transfer state energy of the polymer:fullerene BHJ solar cells increased substantially with the degree of twist induced within the conjugated backbone--due to an increase in the polymer ionization potential--while the short-circuit current decreased as a result of a larger optical gap and lower hole mobility. A controlled, moderate degree of twist along the poly(3,4-dihexyl-2,2':5',2''-terthiophene) (PDHTT) conjugated backbone led to a 19% enhancement in the open-circuit voltage (0.735 V) vs poly(3-hexylthiophene)-based devices, while similar short-circuit current densities, fill factors, and hole-carrier mobilities were maintained. These factors resulted in a power conversion efficiency of 4.2% for a PDHTT:[6,6]-phenyl-C(71)-butyric acid methyl ester (PC(71)BM) blend solar cell without thermal annealing. This simple approach reveals a molecular design avenue to increase open-circuit voltage while retaining the short-circuit current.

Voltage controlled oscillator is easily aligned, has low phase noise

NASA Technical Reports Server (NTRS)

Sydnor, R. L.

1965-01-01

Voltage Controlled Oscillator /VCO/, represented by an equivalent RF circuit, is easily adjusted for optimum performance by varying the circuit parameter. It contains a crystal drive level which is also easily adjusted to obtain minimum phase noise.

Electronic circuit provides accurate sensing and control of dc voltage

NASA Technical Reports Server (NTRS)

Loftus, W. D.

1966-01-01

Electronic circuit used relay coil to sense and control dc voltage. The control relay is driven by a switching transistor that is biased to cutoff for all input up to slightly less than the threshold level.

Fuse protects circuit from voltage and current overloads

NASA Technical Reports Server (NTRS)

Casey, L. O.

1969-01-01

Low-melting resistor connected in series with the load protects the circuit against current overloads. It protects test subjects and patients being monitored by electronic instrumentation from inadvertant overloads of current, and sensitive electronic equipment against high-voltage damage.

Enhanced electrostatic vibrational energy harvesting using integrated opposite-charged electrets

NASA Astrophysics Data System (ADS)

Tao, Kai; Wu, Jin; Tang, Lihua; Hu, Liangxing; Woh Lye, Sun; Miao, Jianmin

2017-04-01

This paper presents a sandwich-structured MEMS electret-based vibrational energy harvester (e-VEH) that has two opposite-charged electrets integrated into a single electrostatic device. Compared to the conventional two-plate configuration where the maximum charge can only be induced when the movable mass reaches its lowest position, the proposed harvester is capable of creating maximum charge induction at both the highest and the lowest extremes, leading to an enhanced output performance. As a proof of concept, an out-of-plane MEMS e-VEH device with an overall volume of about 0.24 cm3 is designed, modeled, fabricated and characterized. A holistic equivalent circuit model incorporating the mechanical dynamic model and two capacitive circuits has been established to study the charge circulations. With the fabricated prototype, the experimental analysis demonstrates the superior performance of the proposed sandwiched e-VEH: the output voltage increases by 80.9% and 18.6% at an acceleration of 5 m s-2 compared to the top electret alone and bottom electret alone configurations, respectively. The experimental results also confirm the waveform derivation with the increase of excitation, which is in good agreement with the circuit simulation results. The proposed sandwiched e-VEH topology provides an effective and convenient methodology for improving the performance of electrostatic energy harvesting devices.

Electrostatic vibration energy harvester with 2.4-GHz Cockcroft-Walton rectenna start-up

NASA Astrophysics Data System (ADS)

Takhedmit, Hakim; Saddi, Zied; Karami, Armine; Basset, Philippe; Cirio, Laurent

2017-02-01

In this paper, we propose the design, fabrication and experiments of a macro-scale electrostatic vibration energy harvester (e-VEH), pre-charged wirelessly for the first time with a 2.4-GHz Cockcroft-Walton rectenna. The rectenna is designed and optimized to operate at low power densities and provide high voltage levels: 0.5 V at 0.76 μW/cm2 and 1 V at 1.53 μW/cm2. The e-VEH uses a Bennet doubler as a conditioning circuit. Experiments show a 23-V voltage across the transducer terminal, when the harvester is excited at 25 Hz by 1.5 g of external acceleration. An accumulated energy of 275 μJ and a maximum available power of 0.4 μW are achieved. xml:lang="fr"

Enhanced piezoelectric operation of NiO/GaN heterojunction generator by suppressed internal carrier screening

NASA Astrophysics Data System (ADS)

Jeong, Dae Kyung; Kang, Jin-Ho; Ha, Jun-Seok; Ryu, Sang-Wan

2017-10-01

A NiO/GaN heterojunction piezoelectric generator was fabricated, and the improvement in device performance was analyzed. The electrical properties of NiO were varied by regulating the gas environment during sputtering. An optimized NiO layer was adopted for high piezoelectric voltage generation. Internal carrier screening was revealed to be the dominant mechanism degrading the piezoelectric performance, necessitating the suppression of carrier screening. The highly resistive NiO layer was advantageous in the suppression of carrier transport across the junction that screened the piezoelectric field. The maximum piezoelectric voltage and current density values obtained were 7.55 V and 1.14 µA cm-2, respectively. The power obtained was sufficient to operate a light-emitting diode combined with a charging circuit.

Optical fiber extrinsic Fabry-Perot interferometer sensors for ultrasound detection

NASA Astrophysics Data System (ADS)

Sun, Qingguo; Chen, Na; Ding, Yuetong; Chen, Zhenyi; Wang, Tingyun

2009-11-01

In this paper, a new method is proposed to fabricate an optical fiber extrinsic Fabry-Perot interferometer (EFPI) as an ultrasonic sensor. An acoustic emission detecting system is constructed based on multiple EFPI sensors and demodulation circuit. Ultrasound detection experiments were done from both traditional piezoelectric transducer (PZT) and high voltage discharge. In the experiments, strong ultrasound signals were detected in both cases. The signal attenuation related to the distance and the angle between the acoustic emission source and the FP sensor are obtained. The results indicate that the receiving angle of the FP sensor is nearly 90° and the maximum detection distance in the air is more than 200cm. Furthermore, four sensors are used to locate the position of the ultrasound source produced by high voltage discharge.

Frequency Up-Converted Low Frequency Vibration Energy Harvester Using Trampoline Effect

NASA Astrophysics Data System (ADS)

Ju, S.; Chae, S. H.; Choi, Y.; Jun, S.; Park, S. M.; Lee, S.; Lee, H. W.; Ji, C.-H.

2013-12-01

This paper presents a non-resonant vibration energy harvester based on magnetoelectric transduction mechanism and mechanical frequency up-conversion using trampoline effect. The harvester utilizes a freely movable spherical permanent magnet which bounces off the aluminum springs integrated at both ends of the cavity, achieving frequency up-conversion from low frequency input vibration. Moreover, bonding method of magnetoelectric laminate composite has been optimized to provide higher strain to piezoelectric material and thus obtain a higher output voltage. A proof-of-concept energy harvesting device has been fabricated and tested. Maximum open-circuit voltage of 11.2V has been obtained and output power of 0.57μW has been achieved for a 50kΩ load, when the fabricated energy harvester was hand-shaken.

CIRCUITS FOR CURRENT MEASUREMENTS

DOEpatents

Cox, R.J.

1958-11-01

Circuits are presented for measurement of a logarithmic scale of current flowing in a high impedance. In one form of the invention the disclosed circuit is in combination with an ionization chamber to measure lonization current. The particular circuit arrangement lncludes a vacuum tube having at least one grid, an ionization chamber connected in series with a high voltage source and the grid of the vacuum tube, and a d-c amplifier feedback circuit. As the ionization chamber current passes between the grid and cathode of the tube, the feedback circuit acts to stabilize the anode current, and the feedback voltage is a measure of the logaritbm of the ionization current.

Solid state light source driver establishing buck or boost operation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palmer, Fred

A solid state light source driver circuit that operates in either a buck convertor or a boost convertor configuration is provided. The driver circuit includes a controller, a boost switch circuit and a buck switch circuit, each coupled to the controller, and a feedback circuit, coupled to the light source. The feedback circuit provides feedback to the controller, representing a DC output of the driver circuit. The controller controls the boost switch circuit and the buck switch circuit in response to the feedback signal, to regulate current to the light source. The controller places the driver circuit in its boostmore » converter configuration when the DC output is less than a rectified AC voltage coupled to the driver circuit at an input node. The controller places the driver circuit in its buck converter configuration when the DC output is greater than the rectified AC voltage at the input node.« less

Programmable Low-Voltage Circuit Breaker and Tester

NASA Technical Reports Server (NTRS)

Greenfield, Terry

2008-01-01

An instrumentation system that would comprise a remotely controllable and programmable low-voltage circuit breaker plus several electric-circuit-testing subsystems has been conceived, originally for use aboard a spacecraft during all phases of operation from pre-launch testing through launch, ascent, orbit, descent, and landing. The system could also be adapted to similar use aboard aircraft. In comparison with remotely controllable circuit breakers heretofore commercially available, this system would be smaller, less massive, and capable of performing more functions, as needed for aerospace applications.

Single-Event Transients in Voltage Regulators

NASA Technical Reports Server (NTRS)

Johnston, Allan H.; Miyahira, Tetsuo F.; Irom, F.; Laird, Jamie S.

2006-01-01

Single-event transients are investigated for two voltage regulator circuits that are widely used in space. A circuit-level model is developed that can be used to determine how transients are affected by different circuit application conditions. Internal protection circuits-which are affected by load as well as internal thermal effects-can also be triggered from heavy ions, causing dropouts or shutdown ranging from milliseconds to seconds. Although conventional output transients can be reduced by adding load capacitance, that approach is ineffective for dropouts from protection circuitry.

Fast, Low-Power, Hysteretic Level-Detector Circuit

NASA Technical Reports Server (NTRS)

Arditti, Mordechai

1993-01-01

Circuit for detection of preset levels of voltage or current intended to replace standard fast voltage comparator. Hysteretic analog/digital level detector operates at unusually low power with little sacrifice of speed. Comprises low-power analog circuit and complementary metal oxide/semiconductor (CMOS) digital circuit connected in overall closed feedback loop to decrease rise and fall times, provide hysteresis, and trip-level control. Contains multiple subloops combining linear and digital feedback. Levels of sensed signals and hysteresis level easily adjusted by selection of components to suit specific application.

Maximum efficiency of state-space models of nanoscale energy conversion devices

NASA Astrophysics Data System (ADS)

Einax, Mario; Nitzan, Abraham

2016-07-01

The performance of nano-scale energy conversion devices is studied in the framework of state-space models where a device is described by a graph comprising states and transitions between them represented by nodes and links, respectively. Particular segments of this network represent input (driving) and output processes whose properly chosen flux ratio provides the energy conversion efficiency. Simple cyclical graphs yield Carnot efficiency for the maximum conversion yield. We give general proof that opening a link that separate between the two driving segments always leads to reduced efficiency. We illustrate these general result with simple models of a thermoelectric nanodevice and an organic photovoltaic cell. In the latter an intersecting link of the above type corresponds to non-radiative carriers recombination and the reduced maximum efficiency is manifested as a smaller open-circuit voltage.

Maximum efficiency of state-space models of nanoscale energy conversion devices.

PubMed

Einax, Mario; Nitzan, Abraham

2016-07-07

The performance of nano-scale energy conversion devices is studied in the framework of state-space models where a device is described by a graph comprising states and transitions between them represented by nodes and links, respectively. Particular segments of this network represent input (driving) and output processes whose properly chosen flux ratio provides the energy conversion efficiency. Simple cyclical graphs yield Carnot efficiency for the maximum conversion yield. We give general proof that opening a link that separate between the two driving segments always leads to reduced efficiency. We illustrate these general result with simple models of a thermoelectric nanodevice and an organic photovoltaic cell. In the latter an intersecting link of the above type corresponds to non-radiative carriers recombination and the reduced maximum efficiency is manifested as a smaller open-circuit voltage.

Characterization of perovskite solar cells: Towards a reliable measurement protocol

NASA Astrophysics Data System (ADS)

Zimmermann, Eugen; Wong, Ka Kan; Müller, Michael; Hu, Hao; Ehrenreich, Philipp; Kohlstädt, Markus; Würfel, Uli; Mastroianni, Simone; Mathiazhagan, Gayathri; Hinsch, Andreas; Gujar, Tanaji P.; Thelakkat, Mukundan; Pfadler, Thomas; Schmidt-Mende, Lukas

2016-09-01

Lead halide perovskite solar cells have shown a tremendous rise in power conversion efficiency with reported record efficiencies of over 20% making this material very promising as a low cost alternative to conventional inorganic solar cells. However, due to a differently severe "hysteretic" behaviour during current density-voltage measurements, which strongly depends on scan rate, device and measurement history, preparation method, device architecture, etc., commonly used solar cell measurements do not give reliable or even reproducible results. For the aspect of commercialization and the possibility to compare results of different devices among different laboratories, it is necessary to establish a measurement protocol which gives reproducible results. Therefore, we compare device characteristics derived from standard current density-voltage measurements with stabilized values obtained from an adaptive tracking of the maximum power point and the open circuit voltage as well as characteristics extracted from time resolved current density-voltage measurements. Our results provide insight into the challenges of a correct determination of device performance and propose a measurement protocol for a reliable characterisation which is easy to implement and has been tested on varying perovskite solar cells fabricated in different laboratories.

Modified Perfect Harmonics Cancellation Control of a Grid Interfaced SPV Power Generation

NASA Astrophysics Data System (ADS)

Singh, B.; Shahani, D. T.; Verma, A. K.

2015-03-01

This paper deals with a grid interfaced solar photo voltaic (SPV) power generating system with modified perfect harmonic cancellation (MPHC) control for power quality improvement in terms of mitigation of the current harmonics, power factor correction, control of point of common coupling (PCC) voltage with reactive power compensation and load balancing in a three phase distribution system. The proposed grid interfaced SPV system consists of a SPV array, a dc-dc boost converter and a voltage source converter (VSC) used for the compensation of other connected linear and nonlinear loads at PCC. The reference grid currents are estimated using MPHC method and control signals are derived by using pulse width modulation (PWM) current controller of VSC. The SPV power is fed to the common dc bus of VSC and dc-dc boost converter using maximum power point tracking (MPPT). The dc link voltage of VSC is regulated by using dc voltage proportional integral (PI) controller. The analysis of the proposed SPV power generating system is carried out under dc/ac short circuit and severe SPV-SX and SPV-TX intrusion.

Compensated count-rate circuit for radiation survey meter

DOEpatents

Todd, Richard A.

1981-01-01

A count-rate compensating circuit is provided which may be used in a portable Geiger-Mueller (G-M) survey meter to ideally compensate for counting loss errors in the G-M tube detector. In a G-M survey meter, wherein the pulse rate from the G-M tube is converted into a pulse rate current applied to a current meter calibrated to indicate dose rate, the compensated circuit generates and controls a reference voltage in response to the rate of pulses from the detector. This reference voltage is gated to the current-generating circuit at a rate identical to the rate of pulses coming from the detector so that the current flowing through the meter is varied in accordance with both the frequency and amplitude of the reference voltage pulses applied thereto so that the count rate is compensated ideally to indicate a true count rate within 1% up to a 50% duty cycle for the detector. A positive feedback circuit is used to control the reference voltage so that the meter output tracks true count rate indicative of the radiation dose rate.

Compensated count-rate circuit for radiation survey meter

DOEpatents

Todd, R.A.

1980-05-12

A count-rate compensating circuit is provided which may be used in a portable Geiger-Mueller (G-M) survey meter to ideally compensate for couting loss errors in the G-M tube detector. In a G-M survey meter, wherein the pulse rate from the G-M tube is converted into a pulse rate current applied to a current meter calibrated to indicate dose rate, the compensation circuit generates and controls a reference voltage in response to the rate of pulses from the detector. This reference voltage is gated to the current-generating circuit at a rate identical to the rate of pulses coming from the detector so that the current flowing through the meter is varied in accordance with both the frequency and amplitude of the reference voltage pulses applied thereto so that the count rate is compensated ideally to indicate a true count rate within 1% up to a 50% duty cycle for the detector. A positive feedback circuit is used to control the reference voltage so that the meter output tracks true count rate indicative of the radiation dose rate.

Conduction-coupled Tesla transformer.

PubMed

Reed, J L

2015-03-01

A proof-of-principle Tesla transformer circuit is introduced. The new transformer exhibits the high voltage-high power output signal of shock-excited transformers. The circuit, with specification of proper circuit element values, is capable of obtaining extreme oscillatory voltages. The primary and secondary portions of the circuit communicate solely by conduction. The destructive arcing between the primary and secondary inductors in electromagnetically coupled transformers is ubiquitous. Flashover is eliminated in the new transformer as the high-voltage inductors do not interpenetrate and so do not possess an annular volume of electric field. The inductors are remote from one another. The high voltage secondary inductor is isolated in space, except for a base feed conductor, and obtains earth by its self-capacitance to the surroundings. Governing equations, for the ideal case of no damping, are developed from first principles. Experimental, theoretical, and circuit simulator data are presented for the new transformer. Commercial high-temperature superconductors are discussed as a means to eliminate the counter-intuitive damping due to small primary inductances in both the electromagnetic-coupled and new conduction-coupled transformers.

Interplay of oxygen-evolution kinetics and photovoltaic power curves on the construction of artificial leaves

PubMed Central

Surendranath, Yogesh; Bediako, D. Kwabena; Nocera, Daniel G.

2012-01-01

An artificial leaf can perform direct solar-to-fuels conversion. The construction of an efficient artificial leaf or other photovoltaic (PV)-photoelectrochemical device requires that the power curve of the PV material and load curve of water splitting, composed of the catalyst Tafel behavior and cell resistances, be well-matched near the thermodynamic potential for water splitting. For such a condition, we show here that the current density-voltage characteristic of the catalyst is a key determinant of the solar-to-fuels efficiency (SFE). Oxidic Co and Ni borate (Co-Bi and Ni-Bi) thin films electrodeposited from solution yield oxygen-evolving catalysts with Tafel slopes of 52 mV/decade and 30 mV/decade, respectively. The consequence of the disparate Tafel behavior on the SFE is modeled using the idealized behavior of a triple-junction Si PV cell. For PV cells exhibiting similar solar power-conversion efficiencies, those displaying low open circuit voltages are better matched to catalysts with low Tafel slopes and high exchange current densities. In contrast, PV cells possessing high open circuit voltages are largely insensitive to the catalyst’s current density-voltage characteristics but sacrifice overall SFE because of less efficient utilization of the solar spectrum. The analysis presented herein highlights the importance of matching the electrochemical load of water-splitting to the onset of maximum current of the PV component, drawing a clear link between the kinetic profile of the water-splitting catalyst and the SFE efficiency of devices such as the artificial leaf. PMID:22689962

Evaluation of biasing and protection circuitry components for cryogenic MMIC low-noise amplifiers

NASA Astrophysics Data System (ADS)

Lamb, James W.

2014-05-01

Millimeter-wave integrated circuits with gate lengths as short as 35 nm are demonstrating extremely low-noise performance, especially when cooled to cryogenic temperatures. These operate at low voltages and are susceptible to damage from electrostatic discharge and improper biasing, as well as being sensitive to low-level interference. Designing a protection circuit for low voltages and temperatures is challenging because there is very little data available on components that may be suitable. Extensive testing at low temperatures yielded a set of components and a circuit topology that demonstrates the required level of protection for critical MMICs and similar devices. We present a circuit that provides robust protection for low voltage devices from room temperature down to 4 K.

Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery

NASA Astrophysics Data System (ADS)

Cheng, Zai-Jun; San, Hai-Sheng; Chen, Xu-Yuan; Liu, Bo; Feng, Zhi-Hong

2011-07-01

A high open-circuit voltage betavoltaic microbattery based on a GaN p-i-n diode is demonstrated. Under the irradiation of a 4×4 mm2 planar solid 63Ni source with an activity of 2 mCi, the open-circuit voltage Voc of the fabricated single 2×2mm2 cell reaches as high as 1.62 V, the short-circuit current density Jsc is measured to be 16nA/cm2. The microbattery has a fill factor of 55%, and the energy conversion efficiency of beta radiation into electricity reaches to 1.13%. The results suggest that GaN is a highly promising potential candidate for long-life betavoltaic microbatteries used as power supplies for microelectromechanical system devices.

Integrated circuit electrometer and sweep circuitry for an atmospheric probe

NASA Technical Reports Server (NTRS)

Zimmerman, L. E.

1971-01-01

The design of electrometer circuitry using an integrated circuit operational amplifier with a MOSFET input is described. Input protection against static voltages is provided by a dual ultra low leakage diode or a neon lamp. Factors affecting frequency response leakage resistance, and current stability are discussed, and methods are suggested for increasing response speed and for eliminating leakage resistance and current instabilities. Based on the above, two practical circuits, one having a linear response and the other a logarithmic response, were designed and evaluated experimentally. The design of a sweep circuit to implement mobility measurements using atmospheric probes is presented. A triangular voltage waveform is generated and shaped to contain a step in voltage from zero volts in both positive and negative directions.

Geologic fracturing method and resulting fractured geologic structure

DOEpatents

Mace, Jonathan L.; Bradley, Christopher R.; Greening, Doran R.; Steedman, David W.

2016-11-08

Detonation control modules and detonation control circuits are provided herein. A trigger input signal can cause a detonation control module to trigger a detonator. A detonation control module can include a timing circuit, a light-producing diode such as a laser diode, an optically triggered diode, and a high-voltage capacitor. The trigger input signal can activate the timing circuit. The timing circuit can control activation of the light-producing diode. Activation of the light-producing diode illuminates and activates the optically triggered diode. The optically triggered diode can be coupled between the high-voltage capacitor and the detonator. Activation of the optically triggered diode causes a power pulse to be released from the high-voltage capacitor that triggers the detonator.

Reproducible and controllable induction voltage adder for scaled beam experiments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sakai, Yasuo; Nakajima, Mitsuo; Horioka, Kazuhiko

2016-08-15

A reproducible and controllable induction adder was developed using solid-state switching devices and Finemet cores for scaled beam compression experiments. A gate controlled MOSFET circuit was developed for the controllable voltage driver. The MOSFET circuit drove the induction adder at low magnetization levels of the cores which enabled us to form reproducible modulation voltages with jitter less than 0.3 ns. Preliminary beam compression experiments indicated that the induction adder can improve the reproducibility of modulation voltages and advance the beam physics experiments.

Novel zero voltage transition pulse width modulation flyback converter

NASA Astrophysics Data System (ADS)

Adib, Ehsan; Farzanehfard, Hosein

2010-09-01

In this article, a new zero voltage (ZV) transition flyback converter is introduced which uses a simple auxiliary circuit. In this converter, ZV switching condition is achieved for the converter switch while zero current switching condition is attained for the auxiliary switch. There is no additional voltage and current stress on the main switch. Main diode, auxiliary circuit voltage and current ratings are low. The proposed converter is analysed and design procedure is discussed. The presented experimental results of a prototype converter justify the theoretical analysis.

Design techniques for low-voltage analog integrated circuits

NASA Astrophysics Data System (ADS)

Rakús, Matej; Stopjaková, Viera; Arbet, Daniel

2017-08-01

In this paper, a review and analysis of different design techniques for (ultra) low-voltage integrated circuits (IC) are performed. This analysis shows that the most suitable design methods for low-voltage analog IC design in a standard CMOS process include techniques using bulk-driven MOS transistors, dynamic threshold MOS transistors and MOS transistors operating in weak or moderate inversion regions. The main advantage of such techniques is that there is no need for any modification of standard CMOS structure or process. Basic circuit building blocks like differential amplifiers or current mirrors designed using these approaches are able to operate with the power supply voltage of 600 mV (or even lower), which is the key feature towards integrated systems for modern portable applications.

Design and validation of a high-voltage levitation circuit for electrostatic accelerometers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, G.; Wu, S. C.; Zhou, Z. B.

2013-12-15

A simple high-voltage circuit with a voltage range of 0 to 900 V and an open-loop bandwidth of 11 kHz is realized by using an operational amplifier and a MOSFET combination. The circuit is used for the levitation of a test mass of 71 g, suspended below the top-electrodes with a gap distance of 57 μm, so that the performance of an electrostatic accelerometer can be tested on the ground. The translation noise of the accelerometer, limited by seismic noise, is about 4 × 10{sup −8} m/s{sup 2}/Hz{sup 1/2} at 0.1 Hz, while the high-voltage coupling noise is one-order ofmore » magnitude lower.« less

Use of vacuum tubes in test instrumentation for measuring characteristics of fast high-voltage semiconductor devices

NASA Technical Reports Server (NTRS)

Berning, D.

1981-01-01

Circuits are described that permit measurement of fast events occurring in power semiconductors. These circuits were developed for the dynamic characterization of transistors used in inductive-load switching applications. Fast voltage clamping using vacuum diodes is discussed, and reference is made to a unique circuit that was built for performing nondestructive, reverse-bias, second-breakdown tests on transistors.

Development of High Level Electrical Stress Failure Threshold and Prediction Model for Small Scale Junction Integrated Circuits

DTIC Science & Technology

1978-09-01

AWACS EMP Guidelines presents two different models to predict the damage pcwer of the dev-ce and the circuit damage EMP voltage ( VEMP ). Neither of...calculated as K P~ I V BD 6. The damage EMP voltage ( VEMP ) is calculated KZ EMP +IZ =D +BD VBD1F 7. The damage EMP voltage is calculated for collector

Molecular electronics in pinnae of Mimosa pudica

PubMed Central

Foster, Justin C; Markin, Vladislav S

2010-01-01

Bioelectrochemical circuits operate in all plants including the sensitive plant Mimosa pudica Linn. The activation of biologically closed circuits with voltage gated ion channels can lead to various mechanical, hydrodynamical, physiological, biochemical and biophysical responses. Here the biologically closed electrochemical circuit in pinnae of Mimosa pudica is analyzed using the charged capacitor method for electrostimulation at different voltages. Also the equivalent electrical scheme of electrical signal transduction inside the plant's pinna is evaluated. These circuits remain linear at small potentials not exceeding 0.5 V. At higher potentials the circuits become strongly non-linear pointing to the opening of ion channels in plant tissues. Changing the polarity of electrodes leads to a strong rectification effect and to different kinetics of a capacitor. These effects can be caused by a redistribution of K+, Cl−, Ca2+ and H+ ions through voltage gated ion channels. The electrical properties of Mimosa pudica were investigated and equivalent electrical circuits within the pinnae were proposed to explain the experimental data. PMID:20448476

Molecular electronics in pinnae of Mimosa pudica.

PubMed

Volkov, Alexander G; Foster, Justin C; Markin, Vladislav S

2010-07-01

Bioelectrochemical circuits operate in all plants including the sensitive plant Mimosa pudica Linn. The activation of biologically closed circuits with voltage gated ion channels can lead to various mechanical, hydrodynamical, physiological, biochemical, and biophysical responses. Here the biologically closed electrochemical circuit in pinnae of Mimosa pudica is analyzed using the charged capacitor method for electrostimulation at different voltages. Also the equivalent electrical scheme of electrical signal transduction inside the plant's pinna is evaluated. These circuits remain linear at small potentials not exceeding 0.5 V. At higher potentials the circuits become strongly non-linear pointing to the opening of ion channels in plant tissues. Changing the polarity of electrodes leads to a strong rectification effect and to different kinetics of a capacitor. These effects can be caused by a redistribution of K(+), Cl(-), Ca(2+), and H(+) ions through voltage gated ion channels. The electrical properties of Mimosa pudica were investigated and equivalent electrical circuits within the pinnae were proposed to explain the experimental data.

Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications.

PubMed

Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

2016-05-09

Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm(2) V(-1) sec(-1), and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications

PubMed Central

Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

2016-01-01

Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm2 V−1 sec−1, and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity. PMID:27157914

DC attenuation meter

DOEpatents

Hargrove, Douglas L.

2004-09-14

A portable, hand-held meter used to measure direct current (DC) attenuation in low impedance electrical signal cables and signal attenuators. A DC voltage is applied to the signal input of the cable and feedback to the control circuit through the signal cable and attenuators. The control circuit adjusts the applied voltage to the cable until the feedback voltage equals the reference voltage. The "units" of applied voltage required at the cable input is the system attenuation value of the cable and attenuators, which makes this meter unique. The meter may be used to calibrate data signal cables, attenuators, and cable-attenuator assemblies.

Effects of Temperature and Supply Voltage on SEU- and SET-Induced Errors in Bulk 40-nm Sequential Circuits

NASA Astrophysics Data System (ADS)

Chen, R. M.; Diggins, Z. J.; Mahatme, N. N.; Wang, L.; Zhang, E. X.; Chen, Y. P.; Zhang, H.; Liu, Y. N.; Narasimham, B.; Witulski, A. F.; Bhuva, B. L.; Fleetwood, D. M.

2017-08-01

The single-event sensitivity of bulk 40-nm sequential circuits is investigated as a function of temperature and supply voltage. An overall increase in SEU cross section versus temperature is observed at relatively high supply voltages. However, at low supply voltages, there is a threshold temperature beyond which the SEU cross section decreases with further increases in temperature. Single-event transient induced errors in flip-flops also increase versus temperature at relatively high supply voltages and are more sensitive to temperature variation than those caused by single-event upsets.

The realization of an SVGA OLED-on-silicon microdisplay driving circuit

NASA Astrophysics Data System (ADS)

Bohua, Zhao; Ran, Huang; Fei, Ma; Guohua, Xie; Zhensong, Zhang; Huan, Du; Jiajun, Luo; Yi, Zhao

2012-03-01

An 800 × 600 pixel organic light-emitting diode-on-silicon (OLEDoS) driving circuit is proposed. The pixel cell circuit utilizes a subthreshold-voltage-scaling structure which can modulate the pixel current between 170 pA and 11.4 nA. In order to keep the voltage of the column bus at a relatively high level, the sample-and-hold circuits adopt a ping-pong operation. The driving circuit is fabricated in a commercially available 0.35 μm two-poly four-metal 3.3 V mixed-signal CMOS process. The pixel cell area is 15 × 15 μm2 and the total chip occupies 15.5 × 12.3 mm2. Experimental results show that the chip can work properly at a frame frequency of 60 Hz and has a 64 grayscale (monochrome) display. The total power consumption of the chip is about 85 mW with a 3.3V supply voltage.

Optimization of Passive Voltage Multipliers for Fast Start-up and Multi-voltage Power Supplies in Electromagnetic Energy Harvesting Systems

NASA Astrophysics Data System (ADS)

Yang, G.; Stark, B. H.; Burrow, S. G.; Hollis, S. J.

2014-11-01

This paper demonstrates the use of passive voltage multipliers for rapid start-up of sub-milliwatt electromagnetic energy harvesting systems. The work describes circuit optimization to make as short as possible the transition from completely depleted energy storage to the first powering-up of an actively controlled switched-mode converter. The dependency of the start-up time on component parameters and topologies is derived by simulation and experimentation. The resulting optimized multiplier design reduces the start-up time from several minutes to 1 second. An additional improvement uses the inherent cascade structure of the voltage multiplier to power sub-systems at different voltages. This multi-rail start-up is shown to reduce the circuit losses of the active converter by 72% with respect to the optimized single-rail system. The experimental results provide insight into the multiplier's transient behaviour, including circuit interactions, in a complete harvesting system, and offer important information to optimize voltage multipliers for rapid start-up.

Study of relationships of material properties and high efficiency solar cell performance on material composition

NASA Technical Reports Server (NTRS)

Sah, C. T.

1983-01-01

The performance improvements obtainable from extending the traditionally thin back-surface-field (BSF) layer deep into the base of silicon solar cells under terrestrial solar illumination (AM1) are analyzed. This extended BSF cell is also known as the back-drift-field cell. About 100 silicon cells were analyzed, each with a different emitter or base dopant impurity distribution whose selection was based on physically anticipated improvements. The four principal performance parameters (the open-circuit voltage, the short-circuit current, the fill factor, and the maximum efficiency) are computed using a FORTRAN program, called Circuit Technique for Semiconductor-device Analysis, CTSA, which numerically solves the six Shockley Equations under AM1 solar illumination at 88.92 mW/cm, at an optimum cell thickness of 50 um. The results show that very significant performance improvements can be realized by extending the BSF layer thickness from 2 um (18% efficiency) to 40 um (20% efficiency).

A high voltage pulse generator based on silicon-controlled rectifier for field-reversed configuration experiment.

PubMed

Lin, Munan; Liu, Ming; Zhu, Guanghui; Wang, Yanpeng; Shi, Peiyun; Sun, Xuan

2017-08-01

A high voltage pulse generator based on a silicon-controlled rectifier has been designed and implemented for a field reversed configuration experiment. A critical damping circuit is used in the generator to produce the desired pulse waveform. Depending on the load, the rise time of the output trigger signal can be less than 1 μs, and the peak amplitudes of trigger voltage and current are up to 8 kV and 85 A in a single output. The output voltage can be easily adjusted by changing the voltage on a capacitor of the generator. In addition, the generator integrates an electrically floating heater circuit so it is capable of triggering either pseudosparks (TDI-type hydrogen thyratron) or ignitrons. Details of the circuits and their implementation are described in the paper. The trigger generator has successfully controlled the discharging sequence of the pulsed power supply for a field reversed configuration experiment.

A high voltage pulse generator based on silicon-controlled rectifier for field-reversed configuration experiment

NASA Astrophysics Data System (ADS)

Lin, Munan; Liu, Ming; Zhu, Guanghui; Wang, Yanpeng; Shi, Peiyun; Sun, Xuan

2017-08-01

A high voltage pulse generator based on a silicon-controlled rectifier has been designed and implemented for a field reversed configuration experiment. A critical damping circuit is used in the generator to produce the desired pulse waveform. Depending on the load, the rise time of the output trigger signal can be less than 1 μs, and the peak amplitudes of trigger voltage and current are up to 8 kV and 85 A in a single output. The output voltage can be easily adjusted by changing the voltage on a capacitor of the generator. In addition, the generator integrates an electrically floating heater circuit so it is capable of triggering either pseudosparks (TDI-type hydrogen thyratron) or ignitrons. Details of the circuits and their implementation are described in the paper. The trigger generator has successfully controlled the discharging sequence of the pulsed power supply for a field reversed configuration experiment.

Auxiliary quasi-resonant dc tank electrical power converter

DOEpatents

Peng, Fang Z.

2006-10-24

An auxiliary quasi-resonant dc tank (AQRDCT) power converter with fast current charging, voltage balancing (or charging), and voltage clamping circuits is provided for achieving soft-switched power conversion. The present invention is an improvement of the invention taught in U.S. Pat. No. 6,111,770, herein incorporated by reference. The present invention provides faster current charging to the resonant inductor, thus minimizing delay time of the pulse width modulation (PWM) due to the soft-switching process. The new AQRDCT converter includes three tank capacitors or power supplies to achieve the faster current charging and minimize the soft-switching time delay. The new AQRDCT converter further includes a voltage balancing circuit to charge and discharge the three tank capacitors so that additional isolated power supplies from the utility line are not needed. A voltage clamping circuit is also included for clamping voltage surge due to the reverse recovery of diodes.

Comparative radiation resistance, temperature dependence and performance of diffused junction indium phosphide solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Ghandhi, S. K.; Borrego, J. M.

1987-01-01

Indium phosphide solar cells whose p-n junctions were processed by the open tube capped diffusion and by the closed tube uncapped diffusion of sulfur into Czochralski-grown p-type substrates are compared. Differences found in radiation resistance were attributed to the effects of increased base dopant concentration. Both sets of cells showed superior radiation resistance to that of gallium arsenide cells, in agreement with previous results. No correlation was, however, found between the open-circuit voltage and the temperature dependence of the maximum power.

A three-dimensional integrated nanogenerator for effectively harvesting sound energy from the environment

NASA Astrophysics Data System (ADS)

Liu, Jinmei; Cui, Nuanyang; Gu, Long; Chen, Xiaobo; Bai, Suo; Zheng, Youbin; Hu, Caixia; Qin, Yong

2016-02-01

An integrated triboelectric nanogenerator (ITNG) with a three-dimensional structure benefiting sound propagation and adsorption is demonstrated to more effectively harvest sound energy with improved output performance. With different multifunctional integrated layers working harmonically, it could generate a short-circuit current up to 2.1 mA, an open-circuit voltage up to 232 V and the maximum charging rate can reach 453 μC s-1 for a 1 mF capacitor, which are 4.6 times, 2.6 times and 7.4 times the highest reported values, respectively. Further study shows that the ITNG works well under sound in a wide range of sound intensity levels (SILs) and frequencies, and its output is sensitive to the SIL and frequency of the sound, which reveals that the ITNG can act as a self-powered active sensor for real-time noise surveillance and health care. Moreover, this generator can be used to directly power the Fe(OH)3 sol electrophoresis and shows great potential as a wireless power supply in the electrochemical industry.An integrated triboelectric nanogenerator (ITNG) with a three-dimensional structure benefiting sound propagation and adsorption is demonstrated to more effectively harvest sound energy with improved output performance. With different multifunctional integrated layers working harmonically, it could generate a short-circuit current up to 2.1 mA, an open-circuit voltage up to 232 V and the maximum charging rate can reach 453 μC s-1 for a 1 mF capacitor, which are 4.6 times, 2.6 times and 7.4 times the highest reported values, respectively. Further study shows that the ITNG works well under sound in a wide range of sound intensity levels (SILs) and frequencies, and its output is sensitive to the SIL and frequency of the sound, which reveals that the ITNG can act as a self-powered active sensor for real-time noise surveillance and health care. Moreover, this generator can be used to directly power the Fe(OH)3 sol electrophoresis and shows great potential as a wireless power supply in the electrochemical industry. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr09087c

An equivalent circuit for small atrial trabeculae of frog.

PubMed Central

Jakobsson, E; Barr, L; Connor, J A

1975-01-01

An equivalent electrical circuit has been constructed for small atrial trabecula of frog in a double sucrose gap voltage clamp apparatus. The basic strategy in constructing the circuit was to derive the distribution of membrane capacitance and extracellular resistance from the preparation's response to small voltage displacements near the resting condition, when the membrane conductance is presumably quite low. Then standard Hodgkin-Huxley channels were placed in parallel with the capacitance and the results of voltage clamp experiments were simulated. The results suggest that the membranes of the preparation cannot in fact be clamped near the control voltage nor can the ionic currents be measured directly with reasonable accuracy by axon standards. It may or may not be a realizable goal in the future to define the preparation's electrical behavior well enough to permit the ultimate quantitative description of the membrane's specific ion conductances. The result of this paper suggest that if this goal is achieved using the double sucrose gap voltage clamp, it will be by a detailed quantitative accounting for substantial irreducible errors in voltage control, rather than by experimental achievement of good voltage control. PMID:1203441

Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2

NASA Astrophysics Data System (ADS)

Encomendero, Jimy; Yan, Rusen; Verma, Amit; Islam, S. M.; Protasenko, Vladimir; Rouvimov, Sergei; Fay, Patrick; Jena, Debdeep; Xing, Huili Grace

2018-03-01

We report the generation of room temperature microwave oscillations from GaN/AlN resonant tunneling diodes, which exhibit record-high peak current densities. The tunneling heterostructure grown by molecular beam epitaxy on freestanding GaN substrates comprises a thin GaN quantum well embedded between two AlN tunneling barriers. The room temperature current-voltage characteristics exhibit a record-high maximum peak current density of ˜220 kA/cm2. When biased within the negative differential conductance region, microwave oscillations are measured with a fundamental frequency of ˜0.94 GHz, generating an output power of ˜3.0 μW. Both the fundamental frequency and the output power of the oscillator are limited by the external biasing circuit. Using a small-signal equivalent circuit model, the maximum intrinsic frequency of oscillation for these diodes is predicted to be ˜200 GHz. This work represents a significant step towards microwave power generation enabled by resonant tunneling transport, an ultra-fast process that goes beyond the limitations of current III-Nitride high electron mobility transistors.

Biodegradation of organic matter and anodic microbial communities analysis in sediment microbial fuel cells with/without Fe(III) oxide addition.

PubMed

Xu, Xun; Zhao, Qingliang; Wu, Mingsong; Ding, Jing; Zhang, Weixian

2017-02-01

To enhance the biodegradation of organic matter in sediment microbial fuel cell (SMFC), Fe(III) oxide, as an alternative electron acceptor, was added into the sediment. Results showed that the SMFC with Fe(III) oxide addition obtained higher removal efficiencies for organics than the SMFC without Fe(III) oxide addition and open circuit bioreactor, and produced a maximum power density (P max ) of 87.85mW/m 2 with a corresponding maximum voltage (V max ) of 0.664V. The alteration of UV-254 and specific ultraviolet absorbance (SUVA) also demonstrated the organic matter in sediments can be effectively removed. High-throughput sequencing of anodic microbial communities indicated that bacteria from the genus Geobacter were predominantly detected (21.23%) in the biofilm formed on the anode of SMFCs, while Pseudomonas was the most predominant genus (18.12%) in the presence of Fe(III) oxide. Additionally, compared with the open circuit bioreactor, more electrogenic bacteria attached to the biofilm of anode in SMFCs. Copyright © 2016 Elsevier Ltd. All rights reserved.

Method for exciting inductive-resistive loads with high and controllable direct current

DOEpatents

Hill, Jr., Homer M.

1976-01-01

Apparatus and method for transmitting dc power to a load circuit by applying a dc voltage from a standard waveform synthesizer to duration modulate a bipolar rectangular wave generator. As the amplitude of the dc voltage increases, the widths of the rectangular wave generator output pulses increase, and as the amplitude of the dc voltage decreases, the widths of the rectangular wave generator output pulses decrease. Thus, the waveform synthesizer selectively changes the durations of the rectangular wave generator bipolar output pulses so as to produce a rectangular wave ac carrier that is duration modulated in accordance with and in direct proportion to the voltage amplitude from the synthesizer. Thereupon, by transferring the carrier to the load circuit through an amplifier and a rectifier, the load current also corresponds directly to the voltage amplitude from the synthesizer. To this end, the rectified wave at less than 100% duty factor, amounts to a doubled frequency direct voltage pulse train for applying a direct current to the load, while the current ripple is minimized by a high L/R in the load circuit. In one embodiment, a power transmitting power amplifier means having a dc power supply is matched to the load circuit through a transformer for current magnification without sacrificing load current duration capability, while negative voltage and current feedback are provided in order to insure good output fidelity.

Design of New Power Management Circuit for Light Energy Harvesting System

PubMed Central

Jafer, Issa; Stack, Paul; MacNamee, Kevin

2016-01-01

Nowadays, it can be observed that Wireless Sensors Networks (WSN) are taking increasingly vital roles in many applications, such as building energy monitoring and control, which is the focus of the work in this paper. However, the main challenging issue with adopting WSN technology is the use of power sources such as batteries, which have a limited lifetime. A smart solution that could tackle this problem is using Energy Harvesting technology. The work in this paper will be focused on proposing a new power management design through harvesting indoor light intensity. The new approach is inspired by the use of the Fractional Open Circuit Voltage based Maximum Power Point tracking (MPPT) concept for sub mw Photo Voltaic (PV) cells. The new design adopts two main features: First, it minimizes the power consumed by the power management section; and second, it maximizes the MPPT-converted output voltage and consequently improves the efficiency of the power conversion in the sub mw power level. The new experimentally-tested design showed an improvement of 81% in the efficiency of MPPT conversion using 0.5 mW input power in comparison with the other presented solutions that showed less efficiency with higher input power. PMID:26907300

Hot-spot heating susceptibility due to reverse bias operating conditions

NASA Technical Reports Server (NTRS)

Gonzalez, C. C.

1985-01-01

Because of field experience (indicating that cell and module degradation could occur as a result of hot spot heating), a laboratory test was developed at JPL to determine hot spot susceptibility of modules. The initial hot spot testing work at JPL formed a foundation for the test development. Test parameters are selected as follows. For high shunt resistance cells, the applied back bias test current is set equal to the test cell current at maximum power. For low shunt resistance cells, the test current is set equal to the cell short circuit current. The shadow level is selected to conform to that which would lead to maximum back bias voltage under the appropriate test current level. The test voltage is determined by the bypass diode frequency. The test conditions are meant to simulate the thermal boundary conditions for 100 mW/sq cm, 40C ambient environment. The test lasts 100 hours. A key assumption made during the development of the test is that no current imbalance results from the connecting of multiparallel cell strings. Therefore, the test as originally developed was applicable for single string case only.

Microfabrication and integration of a sol-gel PZT folded spring energy harvester.

PubMed

Lueke, Jonathan; Badr, Ahmed; Lou, Edmond; Moussa, Walied A

2015-05-26

This paper presents the methodology and challenges experienced in the microfabrication, packaging, and integration of a fixed-fixed folded spring piezoelectric energy harvester. A variety of challenges were overcome in the fabrication of the energy harvesters, such as the diagnosis and rectification of sol-gel PZT film quality and adhesion issues. A packaging and integration methodology was developed to allow for the characterizing the harvesters under a base vibration. The conditioning circuitry developed allowed for a complete energy harvesting system, consisting a harvester, a voltage doubler, a voltage regulator and a NiMH battery. A feasibility study was undertaken with the designed conditioning circuitry to determine the effect of the input parameters on the overall performance of the circuit. It was found that the maximum efficiency does not correlate to the maximum charging current supplied to the battery. The efficiency and charging current must be balanced to achieve a high output and a reasonable output current. The development of the complete energy harvesting system allows for the direct integration of the energy harvesting technology into existing power management schemes for wireless sensing.

B-doped diamond field-effect transistor with ferroelectric vinylidene fluoride-trifluoroethylene gate insulator

NASA Astrophysics Data System (ADS)

Karaya, Ryota; Baba, Ikki; Mori, Yosuke; Matsumoto, Tsubasa; Nakajima, Takashi; Tokuda, Norio; Kawae, Takeshi

2017-10-01

A B-doped diamond field-effect transistor (FET) with a ferroelectric vinylidene fluoride-trifluoroethylene (VDF-TrFE) copolymer gate insulator was fabricated. The VDF-TrFE film deposited on the B-doped diamond showed good insulating and ferroelectric properties. Also, a Pt/VDF-TrFE/B-doped diamond layered structure showed ideal behavior as a metal-ferroelectric-semiconductor (MFS) capacitor, and the memory window width was 11 V, when the gate voltage was swept from 20 to -20 V. The fabricated MFS-type FET structure showed the typical properties of a depletion-type p-channel FET and a maximum drain current density of 0.87 mA/mm at room temperature. The drain current versus gate voltage curves of the proposed FET showed a clockwise hysteresis loop owing to the ferroelectricity of the VDF-TrFE gate insulator. In addition, we demonstrated the logic inverter with the MFS-type diamond FET coupled with a load resistor, and obtained the inversion behavior of the input signal and a maximum gain of 18.4 for the present circuit.

Microfabrication and Integration of a Sol-Gel PZT Folded Spring Energy Harvester

PubMed Central

Lueke, Jonathan; Badr, Ahmed; Lou, Edmond; Moussa, Walied A.

2015-01-01

This paper presents the methodology and challenges experienced in the microfabrication, packaging, and integration of a fixed-fixed folded spring piezoelectric energy harvester. A variety of challenges were overcome in the fabrication of the energy harvesters, such as the diagnosis and rectification of sol-gel PZT film quality and adhesion issues. A packaging and integration methodology was developed to allow for the characterizing the harvesters under a base vibration. The conditioning circuitry developed allowed for a complete energy harvesting system, consisting a harvester, a voltage doubler, a voltage regulator and a NiMH battery. A feasibility study was undertaken with the designed conditioning circuitry to determine the effect of the input parameters on the overall performance of the circuit. It was found that the maximum efficiency does not correlate to the maximum charging current supplied to the battery. The efficiency and charging current must be balanced to achieve a high output and a reasonable output current. The development of the complete energy harvesting system allows for the direct integration of the energy harvesting technology into existing power management schemes for wireless sensing. PMID:26016911

Simulation Analysis of DC and Switching Impulse Superposition Circuit

NASA Astrophysics Data System (ADS)

Zhang, Chenmeng; Xie, Shijun; Zhang, Yu; Mao, Yuxiang

2018-03-01

Surge capacitors running between the natural bus and the ground are affected by DC and impulse superposition voltage during operation in the converter station. This paper analyses the simulation aging circuit of surge capacitors by PSCAD electromagnetic transient simulation software. This paper also analyses the effect of the DC voltage to the waveform of the impulse voltage generation. The effect of coupling capacitor to the test voltage waveform is also studied. Testing results prove that the DC voltage has little effect on the waveform of the output of the surge voltage generator, and the value of the coupling capacitor has little effect on the voltage waveform of the sample. Simulation results show that surge capacitor DC and impulse superimposed aging test is feasible.

Power conversion apparatus and method

DOEpatents

Su, Gui-Jia [Knoxville, TN

2012-02-07

A power conversion apparatus includes an interfacing circuit that enables a current source inverter to operate from a voltage energy storage device (voltage source), such as a battery, ultracapacitor or fuel cell. The interfacing circuit, also referred to as a voltage-to-current converter, transforms the voltage source into a current source that feeds a DC current to a current source inverter. The voltage-to-current converter also provides means for controlling and maintaining a constant DC bus current that supplies the current source inverter. The voltage-to-current converter also enables the current source inverter to charge the voltage energy storage device, such as during dynamic braking of a hybrid electric vehicle, without the need of reversing the direction of the DC bus current.

Monolithic 3D CMOS Using Layered Semiconductors.

PubMed

Sachid, Angada B; Tosun, Mahmut; Desai, Sujay B; Hsu, Ching-Yi; Lien, Der-Hsien; Madhvapathy, Surabhi R; Chen, Yu-Ze; Hettick, Mark; Kang, Jeong Seuk; Zeng, Yuping; He, Jr-Hau; Chang, Edward Yi; Chueh, Yu-Lun; Javey, Ali; Hu, Chenming

2016-04-06

Monolithic 3D integrated circuits using transition metal dichalcogenide materials and low-temperature processing are reported. A variety of digital and analog circuits are implemented on two sequentially integrated layers of devices. Inverter circuit operation at an ultralow supply voltage of 150 mV is achieved, paving the way to high-density, ultralow-voltage, and ultralow-power applications. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Method and apparatus for current-output peak detection

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Geronimo, Gianluigi

2017-01-24

A method and apparatus for a current-output peak detector. A current-output peak detector circuit is disclosed and works in two phases. The peak detector circuit includes switches to switch the peak detector circuit from the first phase to the second phase upon detection of the peak voltage of an input voltage signal. The peak detector generates a current output with a high degree of accuracy in the second phase.

Design and implementation of a RF powering circuit for RFID tags or other batteryless embedded devices.

PubMed

Liu, Dongsheng; Wang, Rencai; Yao, Ke; Zou, Xuecheng; Guo, Liang

2014-08-13

A RF powering circuit used in radio-frequency identification (RFID) tags and other batteryless embedded devices is presented in this paper. The RF powering circuit harvests energy from electromagnetic waves and converts the RF energy to a stable voltage source. Analysis of a NMOS gate-cross connected bridge rectifier is conducted to demonstrate relationship between device sizes and power conversion efficiency (PCE) of the rectifier. A rectifier with 38.54% PCE under normal working conditions is designed. Moreover, a stable voltage regulator with a temperature and voltage optimizing strategy including adoption of a combination resistor is developed, which is able to accommodate a large input range of 4 V to 12 V and be immune to temperature variations. Latch-up prevention and noise isolation methods in layout design are also presented. Designed with the HJTC 0.25 μm process, this regulator achieves 0.04 mV/°C temperature rejection ratio (TRR) and 2.5 mV/V voltage rejection ratio (VRR). The RF powering circuit is also fabricated in the HJTC 0.25 μm process. The area of the RF powering circuit is 0.23 × 0.24 mm². The RF powering circuit is successfully integrated with ISO/IEC 15693-compatible and ISO/IEC 14443-compatible RFID tag chips.

Design and Implementation of a RF Powering Circuit for RFID Tags or Other Batteryless Embedded Devices

PubMed Central

Liu, Dongsheng; Wang, Rencai; Yao, Ke; Zou, Xuecheng; Guo, Liang

2014-01-01

A RF powering circuit used in radio-frequency identification (RFID) tags and other batteryless embedded devices is presented in this paper. The RF powering circuit harvests energy from electromagnetic waves and converts the RF energy to a stable voltage source. Analysis of a NMOS gate-cross connected bridge rectifier is conducted to demonstrate relationship between device sizes and power conversion efficiency (PCE) of the rectifier. A rectifier with 38.54% PCE under normal working conditions is designed. Moreover, a stable voltage regulator with a temperature and voltage optimizing strategy including adoption of a combination resistor is developed, which is able to accommodate a large input range of 4 V to 12 V and be immune to temperature variations. Latch-up prevention and noise isolation methods in layout design are also presented. Designed with the HJTC 0.25 μm process, this regulator achieves 0.04 mV/°C temperature rejection ratio (TRR) and 2.5 mV/V voltage rejection ratio (VRR). The RF powering circuit is also fabricated in the HJTC 0.25 μm process. The area of the RF powering circuit is 0.23 × 0.24 mm2. The RF powering circuit is successfully integrated with ISO/IEC 15693-compatible and ISO/IEC 14443-compatible RFID tag chips. PMID:25123466

A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit.

PubMed

Yao, Zong; Liang, Ting; Jia, Pinggang; Hong, Yingping; Qi, Lei; Lei, Cheng; Zhang, Bin; Xiong, Jijun

2016-06-18

This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressure-sensitive chip, a temperature compensation circuit and a signal-conditioning circuit. A silicon on insulation (SOI) material and a standard MEMS process are used in the pressure-sensitive chip fabrication, and high-temperature electronic components are adopted in the temperature-compensation and signal-conditioning circuits. The entire pressure sensor achieves a hermetic seal and can be operated long-term in the range of -50 °C to 220 °C. Unlike traditional pressure sensor output voltage ranges (in the dozens to hundreds of millivolts), the output voltage of this sensor is from 0 V to 5 V, which can significantly improve the signal-to-noise ratio and measurement accuracy in practical applications of long-term transmission based on experimental verification. Furthermore, because this flexible sensor's output voltage is adjustable, general follow-up pressure transmitter devices for voltage converters need not be used, which greatly reduces the cost of the test system. Thus, the proposed high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit is expected to be highly applicable to pressure measurements in harsh environments.

A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit

PubMed Central

Yao, Zong; Liang, Ting; Jia, Pinggang; Hong, Yingping; Qi, Lei; Lei, Cheng; Zhang, Bin; Xiong, Jijun

2016-01-01

This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressure-sensitive chip, a temperature compensation circuit and a signal-conditioning circuit. A silicon on insulation (SOI) material and a standard MEMS process are used in the pressure-sensitive chip fabrication, and high-temperature electronic components are adopted in the temperature-compensation and signal-conditioning circuits. The entire pressure sensor achieves a hermetic seal and can be operated long-term in the range of −50 °C to 220 °C. Unlike traditional pressure sensor output voltage ranges (in the dozens to hundreds of millivolts), the output voltage of this sensor is from 0 V to 5 V, which can significantly improve the signal-to-noise ratio and measurement accuracy in practical applications of long-term transmission based on experimental verification. Furthermore, because this flexible sensor’s output voltage is adjustable, general follow-up pressure transmitter devices for voltage converters need not be used, which greatly reduces the cost of the test system. Thus, the proposed high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit is expected to be highly applicable to pressure measurements in harsh environments. PMID:27322288

Driver Circuit For High-Power MOSFET's

NASA Technical Reports Server (NTRS)

Letzer, Kevin A.

1991-01-01

Driver circuit generates rapid-voltage-transition pulses needed to switch high-power metal oxide/semiconductor field-effect transistor (MOSFET) modules rapidly between full "on" and full "off". Rapid switching reduces time of overlap between appreciable current through and appreciable voltage across such modules, thereby increasing power efficiency.

Voltage versus Current, or the Problem of the Chicken and the Egg

ERIC Educational Resources Information Center

Silva, Antonio Alberto; Soares, Rolando

2007-01-01

In an electric circuit, is it the current that causes the voltage, or the inverse? This is a false dilemma, as shown by an introductory and qualitative approach to a circuit as a system. (Contains 9 figures and 7 footnotes.)

Inverter for Interchangeable Use as Current Source Inverter and Voltage Source Inverter for Interconnecting to Grid

NASA Astrophysics Data System (ADS)

Teruya, Daisuke; Masukawa, Shigeo; Iida, Shoji

We propose a novel inverter that can be operated either as a Current Source Inverter (CSI) or as a Voltage Source Inverter (VSI) by changing only the control signals. It is proper to apply it to the interconnecting system with renewal energy, such as photovoltaic cells or wind generation systems, to a grid. This inverter is usually operated as the CSI connected to the grid. Even if the energy source has a lower voltage than the grid, the energy can be supplied to the grid through the proposed inverter. The power factor can be briefly maintained at almost unity. When power supply from the grid is interrupted, the proposed circuit should be operated as the VSI in the stand-alone operation mode. In this way, the circuit can maintain a constant output voltage to the loads. In this paper, the proposed circuit configuration and the control schemes for both the CSI and the VSI are described. Further, the circuit characteristics for both are discussed experimentally.

A high open-circuit voltage gallium nitride betavoltaic microbattery

NASA Astrophysics Data System (ADS)

Cheng, Zaijun; Chen, Xuyuan; San, Haisheng; Feng, Zhihong; Liu, Bo

2012-07-01

A high open-circuit voltage betavoltaic microbattery based on a gallium nitride (GaN) p-i-n homojunction is demonstrated. As a beta-absorbing layer, the low electron concentration of the n-type GaN layer is achieved by the process of Fe compensation doping. Under the irradiation of a planar solid 63Ni source with activity of 0.5 mCi, the open-circuit voltage of the fabricated microbattery with 2 × 2 mm2 area reaches as much as 1.64 V, which is the record value reported for betavoltaic batteries with 63Ni source, the short-circuit current was measured as 568 pA and the conversion effective of 0.98% was obtained. The experimental results suggest that GaN is a high-potential candidate for developing the betavoltaic microbattery.

ELECTRONIC TRIGGER CIRCUIT

DOEpatents

Russell, J.A.G.

1958-01-01

An electronic trigger circuit is described of the type where an output pulse is obtained only after an input voltage has cqualed or exceeded a selected reference voltage. In general, the invention comprises a source of direct current reference voltage in series with an impedance and a diode rectifying element. An input pulse of preselected amplitude causes the diode to conduct and develop a signal across the impedance. The signal is delivered to an amplifier where an output pulse is produced and part of the output is fed back in a positive manner to the diode so that the amplifier produces a steep wave front trigger pulsc at the output. The trigger point of the described circuit is not subject to variation due to the aging, etc., of multi-electrode tabes, since the diode circuit essentially determines the trigger point.

Comparison of in-situ delay monitors for use in Adaptive Voltage Scaling

NASA Astrophysics Data System (ADS)

Pour Aryan, N.; Heiß, L.; Schmitt-Landsiedel, D.; Georgakos, G.; Wirnshofer, M.

2012-09-01

In Adaptive Voltage Scaling (AVS) the supply voltage of digital circuits is tuned according to the circuit's actual operating condition, which enables dynamic compensation to PVTA variations. By exploiting the excessive safety margins added in state-of-the-art worst-case designs considerable power saving is achieved. In our approach, the operating condition of the circuit is monitored by in-situ delay monitors. This paper presents different designs to implement the in-situ delay monitors capable of detecting late but still non-erroneous transitions, called Pre-Errors. The developed Pre-Error monitors are integrated in a 16 bit multiplier test circuit and the resulting Pre-Error AVS system is modeled by a Markov chain in order to determine the power saving potential of each Pre-Error detection approach.

Four-Quadrant Analog Multipliers Using G4-FETs

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad; Blalock, Benjamin; Christoloveanu, Sorin; Chen, Suheng; Akarvardar, Kerem

2006-01-01

Theoretical analysis and some experiments have shown that the silicon-on-insulator (SOI) 4-gate transistors known as G4-FETs can be used as building blocks of four-quadrant analog voltage multiplier circuits. Whereas a typical prior analog voltage multiplier contains between six and 10 transistors, it is possible to construct a superior voltage multiplier using only four G4-FETs. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET). It can be regarded as a single transistor having four gates, which are parts of a structure that affords high functionality by enabling the utilization of independently biased multiple inputs. The structure of a G4-FET of the type of interest here (see Figure 1) is that of a partially-depleted SOI MOSFET with two independent body contacts, one on each side of the channel. The drain current comprises of majority charge carriers flowing from one body contact to the other that is, what would otherwise be the side body contacts of the SOI MOSFET are used here as the end contacts [the drain (D) and the source (S)] of the G4-FET. What would otherwise be the source and drain of the SOI MOSFET serve, in the G4-FET, as two junction-based extra gates (JG1 and JG2), which are used to squeeze the channel via reverse-biased junctions as in a JFET. The G4-FET also includes a polysilicon top gate (G1), which plays the same role as does the gate in an accumulation-mode MOSFET. The substrate emulates a fourth MOS gate (G2). By making proper choices of G4-FET device parameters in conjunction with bias voltages and currents, one can design a circuit in which two input gate voltages (Vin1,Vin2) control the conduction characteristics of G4-FETs such that the output voltage (Vout) closely approximates a value proportional to the product of the input voltages. Figure 2 depicts two such analog multiplier circuits. In each circuit, there is the following: The input and output voltages are differential, The multiplier core consists of four G4- FETs (M1 through M4) biased by a constant current sink (Ibias), and The G4-FETs in two pairs are loaded by two identical resistors (RL), which convert a differential output current to a differential output voltage. The difference between the two circuits stems from their input and bias configurations. In each case, provided that the input voltages remain within their design ranges as determined by considerations of bias, saturation, and cutoff, then the output voltage is nominally given by Vout = kVin1Vin2, where k is a constant gain factor that depends on the design parameters and is different for the two circuits. In experimental versions of these circuits constructed using discrete G4- FETs and resistors, multiplication of voltages in all four quadrants (that is, in all four combinations of input polarities) was demonstrated, and deviations of the output voltages from linear dependence on the input voltages were found to amount to no more than a few percent. It is anticipated that in fully integrated versions of these circuits, the deviations from linearity will be made considerably smaller through better matching of devices.

Electronic Equipment Proposal to Improve the Photovoltaic Systems Efficiency

NASA Astrophysics Data System (ADS)

Flores-Mena, J. E.; Juárez Morán, L. A.; Díaz Reyes, J.

2011-05-01

This paper reports a new technique proposal to improve the photovoltaic systems. It was made to design and implement an electronic system that will detect, capture, and transfer the maximum power of the photovoltaic (PV) panel to optimize the supplied power of a solar panel. The electronic system works on base technical proposal of electrical sweeping of electric characteristics using capacitive impedance. The maximum power is transformed and the solar panel energy is sent to an automotive battery. This electronic system reduces the energy lost originated when the solar radiation level decreases or the PV panel temperature is increased. This electronic system tracks, captures, and stores the PV module's maximum power into a capacitor. After, a higher voltage level step-up circuit was designed to increase the voltage of the PV module's maximum power and then its current can be sent to a battery. The experimental results show that the developed electronic system has 95% efficiency. The measurement was made to 50 W, the electronic system works rightly with solar radiation rate from 100 to 1,000 W m - 2 and the PV panel temperature rate changed from 1 to 75°C. The main advantage of this electronic system compared with conventional methods is the elimination of microprocessors, computers, and sophisticated numerical approximations, and it does not need any small electrical signals to track the maximum power. The proposed method is simple, fast, and it is also cheaper.

Overload protection circuit for output driver

DOEpatents

Stewart, Roger G.

1982-05-11

A protection circuit for preventing excessive power dissipation in an output transistor whose conduction path is connected between a power terminal and an output terminal. The protection circuit includes means for sensing the application of a turn on signal to the output transistor and the voltage at the output terminal. When the turn on signal is maintained for a period of time greater than a given period without the voltage at the output terminal reaching a predetermined value, the protection circuit decreases the turn on signal to, and the current conduction through, the output transistor.

Simple Cell Balance Circuit

NASA Technical Reports Server (NTRS)

Johnson, Steven D.; Byers, Jerry W.; Martin, James A.

2012-01-01

A method has been developed for continuous cell voltage balancing for rechargeable batteries (e.g. lithium ion batteries). A resistor divider chain is provided that generates a set of voltages representing the ideal cell voltage (the voltage of each cell should be as if the cells were perfectly balanced). An operational amplifier circuit with an added current buffer stage generates the ideal voltage with a very high degree of accuracy, using the concept of negative feedback. The ideal voltages are each connected to the corresponding cell through a current- limiting resistance. Over time, having the cell connected to the ideal voltage provides a balancing current that moves the cell voltage very close to that ideal level. In effect, it adjusts the current of each cell during charging, discharging, and standby periods to force the cell voltages to be equal to the ideal voltages generated by the resistor divider. The device also includes solid-state switches that disconnect the circuit from the battery so that it will not discharge the battery during storage. This solution requires relatively few parts and is, therefore, of lower cost and of increased reliability due to the fewer failure modes. Additionally, this design uses very little power. A preliminary model predicts a power usage of 0.18 W for an 8-cell battery. This approach is applicable to a wide range of battery capacities and voltages.

Low-to-Medium Power Single Chip Digital Controlled DC-DC Regulator for Point-of-Load Applications

NASA Technical Reports Server (NTRS)

Adell, Philippe C. (Inventor); Bakkaloglu, Bertan (Inventor); Vermeire, Bert (Inventor); Liu, Tao (Inventor)

2015-01-01

A DC-DC converter for generating a DC output voltage includes: a digitally controlled pulse width modulator (DPWM) for controlling a switching power stage to supply a varying voltage to an inductor; and a digital voltage feedback circuit for controlling the DPWM in accordance with a feedback voltage corresponding to the DC output voltage, the digital voltage feedback circuit including: a first voltage controlled oscillator for converting the feedback voltage into a first frequency signal and to supply the first frequency signal to a first frequency discriminator; a second voltage controlled oscillator for converting a reference voltage into a second frequency signal and to supply the second frequency signal to a second frequency discriminator; a digital comparator for comparing digital outputs of the first and second frequency discriminators and for outputting a digital feedback signal; and a controller for controlling the DPWM in accordance with the digital feedback signal.

Methods for improving solar cell open circuit voltage

DOEpatents

Jordan, John F.; Singh, Vijay P.

1979-01-01

A method for producing a solar cell having an increased open circuit voltage. A layer of cadmium sulfide (CdS) produced by a chemical spray technique and having residual chlorides is exposed to a flow of hydrogen sulfide (H.sub.2 S) heated to a temperature of 400.degree.-600.degree. C. The residual chlorides are reduced and any remaining CdCl.sub.2 is converted to CdS. A heterojunction is formed over the CdS and electrodes are formed. Application of chromium as the positive electrode results in a further increase in the open circuit voltage available from the H.sub.2 S-treated solar cell.

Application of the superposition principle to solar-cell analysis

NASA Technical Reports Server (NTRS)

Lindholm, F. A.; Fossum, J. G.; Burgess, E. L.

1979-01-01

The superposition principle of differential-equation theory - which applies if and only if the relevant boundary-value problems are linear - is used to derive the widely used shifting approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. Analytical methods are presented to treat cases where shifting is not strictly valid. Well-defined conditions necessary for superposition to apply are established. For high injection in the base region, the method of analysis accurately yields the dependence of the open-circuit voltage on the short-circuit current (or the illumination level).

Battery Charge Equalizer with Transformer Array

NASA Technical Reports Server (NTRS)

Davies, Francis

2013-01-01

High-power batteries generally consist of a series connection of many cells or cell banks. In order to maintain high performance over battery life, it is desirable to keep the state of charge of all the cell banks equal. A method provides individual charging for battery cells in a large, high-voltage battery array with a minimum number of transformers while maintaining reasonable efficiency. This is designed to augment a simple highcurrent charger that supplies the main charge energy. The innovation will form part of a larger battery charge system. It consists of a transformer array connected to the battery array through rectification and filtering circuits. The transformer array is connected to a drive circuit and a timing and control circuit that allow individual battery cells or cell banks to be charged. The timing circuit and control circuit connect to a charge controller that uses battery instrumentation to determine which battery bank to charge. It is important to note that the innovation can charge an individual cell bank at the same time that the main battery charger is charging the high-voltage battery. The fact that the battery cell banks are at a non-zero voltage, and that they are all at similar voltages, can be used to allow charging of individual cell banks. A set of transformers can be connected with secondary windings in series to make weighted sums of the voltages on the primaries.

Voltage imaging to understand connections and functions of neuronal circuits.

PubMed

Antic, Srdjan D; Empson, Ruth M; Knöpfel, Thomas

2016-07-01

Understanding of the cellular mechanisms underlying brain functions such as cognition and emotions requires monitoring of membrane voltage at the cellular, circuit, and system levels. Seminal voltage-sensitive dye and calcium-sensitive dye imaging studies have demonstrated parallel detection of electrical activity across populations of interconnected neurons in a variety of preparations. A game-changing advance made in recent years has been the conceptualization and development of optogenetic tools, including genetically encoded indicators of voltage (GEVIs) or calcium (GECIs) and genetically encoded light-gated ion channels (actuators, e.g., channelrhodopsin2). Compared with low-molecular-weight calcium and voltage indicators (dyes), the optogenetic imaging approaches are 1) cell type specific, 2) less invasive, 3) able to relate activity and anatomy, and 4) facilitate long-term recordings of individual cells' activities over weeks, thereby allowing direct monitoring of the emergence of learned behaviors and underlying circuit mechanisms. We highlight the potential of novel approaches based on GEVIs and compare those to calcium imaging approaches. We also discuss how novel approaches based on GEVIs (and GECIs) coupled with genetically encoded actuators will promote progress in our knowledge of brain circuits and systems. Copyright © 2016 the American Physiological Society.

Voltage imaging to understand connections and functions of neuronal circuits

PubMed Central

Antic, Srdjan D.; Empson, Ruth M.

2016-01-01

Understanding of the cellular mechanisms underlying brain functions such as cognition and emotions requires monitoring of membrane voltage at the cellular, circuit, and system levels. Seminal voltage-sensitive dye and calcium-sensitive dye imaging studies have demonstrated parallel detection of electrical activity across populations of interconnected neurons in a variety of preparations. A game-changing advance made in recent years has been the conceptualization and development of optogenetic tools, including genetically encoded indicators of voltage (GEVIs) or calcium (GECIs) and genetically encoded light-gated ion channels (actuators, e.g., channelrhodopsin2). Compared with low-molecular-weight calcium and voltage indicators (dyes), the optogenetic imaging approaches are 1) cell type specific, 2) less invasive, 3) able to relate activity and anatomy, and 4) facilitate long-term recordings of individual cells' activities over weeks, thereby allowing direct monitoring of the emergence of learned behaviors and underlying circuit mechanisms. We highlight the potential of novel approaches based on GEVIs and compare those to calcium imaging approaches. We also discuss how novel approaches based on GEVIs (and GECIs) coupled with genetically encoded actuators will promote progress in our knowledge of brain circuits and systems. PMID:27075539

Titanium-containing zeolites and microporous molecular sieves as photovoltaic solar cells.

PubMed

Atienzar, Pedro; Valencia, Susana; Corma, Avelino; García, Hermenegildo

2007-05-14

Four titanium-containing zeolites and microporous molecular sieves differing on the crystal structure and particle size (Ti/Beta, Ti/Beta-60, TS-1 and ETS-10) are prepared, and their activity for solar cells after incorporating N3 (a commercially available ruthenium polypyridyl dye) is tested. All the zeolites exhibit photovoltaic activity, and the photoresponse is quite independent of the zeolite pore dimensions or particle size. The photoresponse increases with titanium content in the range 1-7% wt. In this way, cells are obtained that have open-circuit voltage Voc=560 mV and maximum short-circuit photocurrent density Isc=100 microA, measured for 1x1 cm2 surfaces with a solar simulator at 1000 W through and AM 1.5 filter. These values are promising and comparable to those obtained for current dye-sensitized titania solar cells.

Investigating the energy harvesting capabilities of a hybrid ZnO nanowires/carbon fiber polymer composite beam.

PubMed

Masghouni, N; Burton, J; Philen, M K; Al-Haik, M

2015-03-06

Hybrid piezoelectric composite structures that are able to convert mechanical energy into electricity have gained growing attention in the past few years. In this work, an energy harvesting composite beam is developed by growing piezoelectric zinc oxide nanowires on the surface of carbon fiber prior to forming structural composites. The piezoelectric behavior of the composite beam was demonstrated under different vibration sources such as water bath sonicator and permanent magnet vibration shaker. The beam was excited at its fundamental natural frequency (43.2 Hz) and the open circuit voltage and the short circuit current were measured to be 3.1 mV and 23 nA, respectively. Upon connecting an optimal resistor (1.2 kΩ) in series with the beam a maximum power output 2.5 nW was achieved.

TRANSISTOR HIGH VOLTAGE POWER SUPPLY

DOEpatents

Driver, G.E.

1958-07-15

High voltage, direct current power supplies are described for use with battery powered nuclear detection equipment. The particular advantages of the power supply described, are increased efficiency and reduced size and welght brought about by the use of transistors in the circuit. An important feature resides tn the employment of a pair of transistors in an alternatefiring oscillator circuit having a coupling transformer and other circuit components which are used for interconnecting the various electrodes of the transistors.

Four-terminal circuit element with photonic core

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sampayan, Stephen

A four-terminal circuit element is described that includes a photonic core inside of the circuit element that uses a wide bandgap semiconductor material that exhibits photoconductivity and allows current flow through the material in response to the light that is incident on the wide bandgap material. The four-terminal circuit element can be configured based on various hardware structures using a single piece or multiple pieces or layers of a wide bandgap semiconductor material to achieve various designed electrical properties such as high switching voltages by using the photoconductive feature beyond the breakdown voltages of semiconductor devices or circuits operated basedmore » on electrical bias or control designs. The photonic core aspect of the four-terminal circuit element provides unique features that enable versatile circuit applications to either replace the semiconductor transistor-based circuit elements or semiconductor diode-based circuit elements.« less

Focal plane infrared readout circuit with automatic background suppression

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Yang, Guang (Inventor); Sun, Chao (Inventor); Shaw, Timothy J. (Inventor); Wrigley, Chris J. (Inventor)

2002-01-01

A circuit for reading out a signal from an infrared detector includes a current-mode background-signal subtracting circuit having a current memory which can be enabled to sample and store a dark level signal from the infrared detector during a calibration phase. The signal stored by the current memory is subtracted from a signal received from the infrared detector during an imaging phase. The circuit also includes a buffered direct injection input circuit and a differential voltage readout section. By performing most of the background signal estimation and subtraction in a current mode, a low gain can be provided by the buffered direct injection input circuit to keep the gain of the background signal relatively small, while a higher gain is provided by the differential voltage readout circuit. An array of such readout circuits can be used in an imager having an array of infrared detectors. The readout circuits can provide a high effective handling capacity.

Preparation of Power Distribution System for High Penetration of Renewable Energy Part I. Dynamic Voltage Restorer for Voltage Regulation Pat II. Distribution Circuit Modeling and Validation

NASA Astrophysics Data System (ADS)

Khoshkbar Sadigh, Arash

Part I: Dynamic Voltage Restorer In the present power grids, voltage sags are recognized as a serious threat and a frequently occurring power-quality problem and have costly consequence such as sensitive loads tripping and production loss. Consequently, the demand for high power quality and voltage stability becomes a pressing issue. Dynamic voltage restorer (DVR), as a custom power device, is more effective and direct solutions for "restoring" the quality of voltage at its load-side terminals when the quality of voltage at its source-side terminals is disturbed. In the first part of this thesis, a DVR configuration with no need of bulky dc link capacitor or energy storage is proposed. This fact causes to reduce the size of the DVR and increase the reliability of the circuit. In addition, the proposed DVR topology is based on high-frequency isolation transformer resulting in the size reduction of transformer. The proposed DVR circuit, which is suitable for both low- and medium-voltage applications, is based on dc-ac converters connected in series to split the main dc link between the inputs of dc-ac converters. This feature makes it possible to use modular dc-ac converters and utilize low-voltage components in these converters whenever it is required to use DVR in medium-voltage application. The proposed configuration is tested under different conditions of load power factor and grid voltage harmonic. It has been shown that proposed DVR can compensate the voltage sag effectively and protect the sensitive loads. Following the proposition of the DVR topology, a fundamental voltage amplitude detection method which is applicable in both single/three-phase systems for DVR applications is proposed. The advantages of proposed method include application in distorted power grid with no need of any low-pass filter, precise and reliable detection, simple computation and implementation without using a phased locked loop and lookup table. The proposed method has been verified by simulation and experimental tests under various conditions considering all possible cases such as different amounts of voltage sag depth (VSD), different amounts of point-on-wave (POW) at which voltage sag occurs, harmonic distortion, line frequency variation, and phase jump (PJ). Furthermore, the ripple amount of fundamental voltage amplitude calculated by the proposed method and its error is analyzed considering the line frequency variation together with harmonic distortion. The best and worst detection time of proposed method were measured 1ms and 8.8ms, respectively. Finally, the proposed method has been compared with other voltage sag detection methods available in literature. Part 2: Power System Modeling for Renewable Energy Integration: As power distribution systems are evolving into more complex networks, electrical engineers have to rely on software tools to perform circuit analysis. There are dozens of powerful software tools available in the market to perform the power system studies. Although their main functions are similar, there are differences in features and formatting structures to suit specific applications. This creates challenges for transferring power system circuit models data (PSCMD) between different software and rebuilding the same circuit in the second software environment. The objective of this part of thesis is to develop a Unified Platform (UP) to facilitate transferring PSCMD among different software packages and relieve the challenges of the circuit model conversion process. UP uses a commonly available spreadsheet file with a defined format, for any home software to write data to and for any destination software to read data from, via a script-based application called PSCMD transfer application. The main considerations in developing the UP are to minimize manual intervention and import a one-line diagram into the destination software or export it from the source software, with all details to allow load flow, short circuit and other analyses. In this study, ETAP, OpenDSS, and GridLab-D are considered, and PSCMD transfer applications written in MATLAB have been developed for each of these to read the circuit model data provided in the UP spreadsheet. In order to test the developed PSCMD transfer applications, circuit model data of a test circuit and a power distribution circuit from Southern California Edison (SCE) - a utility company - both built in CYME, were exported into the spreadsheet file according to the UP format. Thereafter, circuit model data were imported successfully from the spreadsheet files into above mentioned software using the PSCMD transfer applications developed for each software. After the SCE studied circuit is transferred into OpenDSS software using the proposed UP scheme and developed application, it has been studied to investigate the impacts of large-scale solar energy penetration. The main challenge of solar energy integration into power grid is its intermittency (i.e., discontinuity of output power) nature due to cloud shading of photovoltaic panels which depends on weather conditions. In order to conduct this study, OpenDSS time-series simulation feature, which is required due to intermittency of solar energy, is utilized. In this study, the impacts of intermittency of solar energy penetration, especially high-variability points, on voltage fluctuation and operation of capacitor bank and voltage regulator is provided. In addition, the necessity to interpolate and resample unequally spaced time-series measurement data and convert them to equally spaced time-series data as well as the effect of resampling time-interval on the amount of error is discussed. Two applications are developed in Matlab to do interpolation and resampling as well as to calculate the amount of error for different resampling time-intervals to figure out the suitable resampling time-interval. Furthermore, an approach based on cumulative distribution, regarding the length for lines/cables types and the power rating for loads, is presented to prioritize which loads, lines and cables the meters should be installed at to have the most effect on model validation.

Nonlinear distortion analysis for single heterojunction GaAs HEMT with frequency and temperature

NASA Astrophysics Data System (ADS)

Alim, Mohammad A.; Ali, Mayahsa M.; Rezazadeh, Ali A.

2018-07-01

Nonlinearity analysis using two-tone intermodulation distortion (IMD) technique for 0.5 μm gate-length AlGaAs/GaAs based high electron mobility transistor have been investigated based on biasing conditions, input power, frequency and temperature. The outcomes indicate a significant modification on the output IMD power and as well as the minimum distortion level. The input IMD power effects the output current and subsequently the threshold voltage reduces, resulting to an increment in the output IMD power. Both frequency and temperature reduces the magnitude of the output IMDs. In addition, the threshold voltage response with temperature alters the notch point of the nonlinear output IMD’s accordingly. The aforementioned investigation will help the circuit designers to evaluate the best biasing option in terms of minimum distortion, maximum gain for future design optimizations.

A high-precision voltage source for EIT

PubMed Central

Saulnier, Gary J; Liu, Ning; Ross, Alexander S

2006-01-01

Electrical impedance tomography (EIT) utilizes electrodes placed on the surface of a body to determine the complex conductivity distribution within the body. EIT can be performed by applying currents through the electrodes and measuring the electrode voltages or by applying electrode voltages and measuring the currents. Techniques have also been developed for applying the desired currents using voltage sources. This paper describes a voltage source for use in applied-voltage EIT that includes the capability of measuring both the applied voltage and applied current. A calibration circuit and calibration algorithm are described which enables all voltage sources in an EIT system to be calibrated to a common standard. The calibration minimizes the impact of stray shunt impedance, passive component variability and active component non-ideality. Simulation data obtained using PSpice are used to demonstrate the effectiveness of the circuits and calibration algorithm. PMID:16636413

Plastic-Sealed Hybrid Power Circuit Package

NASA Technical Reports Server (NTRS)

Miller, W. N.; Gray, O. E.

1983-01-01

Proposed design for hybrid high-voltage power-circuit package uses molded plastic for hermetic sealing instead of glass-to-metal seal. New package used to house high-voltage regulators and solid-state switches for applications in aircraft, electric automobiles, industrial equipment, satellites, solarcell arrays, and other equipment in extreme environments.

Analysis Impact of Distributed Generation Injection to Profile of Voltage and Short-Circuit Fault in 20 kV Distribution Network System

NASA Astrophysics Data System (ADS)

Mulyadi, Y.; Sucita, T.; Rahmawan, M. D.

2018-01-01

This study was a case study in PT. PLN (Ltd.) APJ Bandung area with the subject taken was the installation of distributed generation (DG) on 20-kV distribution channels. The purpose of this study is to find out the effect of DG to the changes in voltage profile and three-phase short circuit fault in the 20-kV distribution system with load conditions considered to be balanced. The reason for this research is to know how far DG can improve the voltage profile of the channel and to what degree DG can increase the three-phase short circuit fault on each bus. The method used in this study was comparing the simulation results of power flow and short-circuit fault using ETAP Power System software with manual calculations. The result obtained from the power current simulation before the installation of DG voltage was the drop at the end of the channel at 2.515%. Meanwhile, the three-phase short-circuit current fault before the DG installation at the beginning of the channel was 13.43 kA. After the installation of DG with injection of 50%, DG power obtained voltage drop at the end of the channel was 1.715% and the current fault at the beginning network was 14.05 kA. In addition, with injection of 90%, DG power obtained voltage drop at the end of the channel was 1.06% and the current fault at the beginning network was 14.13%.

High-speed low-power voltage-programmed driving scheme for AMOLED displays

NASA Astrophysics Data System (ADS)

Xingheng, Xia; Weijing, Wu; Xiaofeng, Song; Guanming, Li; Lei, Zhou; Lirong, Zhang; Miao, Xu; Lei, Wang; Junbiao, Peng

2015-12-01

A new voltage-programmed driving scheme named the mixed parallel addressing scheme is presented for AMOLED displays, in which one compensation interval can be divided into the first compensation frame and the consequent N -1 post-compensation frames without periods of initialization and threshold voltage detection. The proposed driving scheme has the advantages of both high speed and low driving power due to the mixture of the pipeline technology and the threshold voltage one-time detection technology. Corresponding to the proposed driving scheme, we also propose a new voltage-programmed compensation pixel circuit, which consists of five TFTs and two capacitors (5T2C). In-Zn-O thin-film transistors (IZO TFTs) are used to build the proposed 5T2C pixel circuit. It is shown that the non-uniformity of the proposed pixel circuit is considerably reduced compared with that of the conventional 2T1C pixel circuit. The number of frames (N) preserved in the proposed driving scheme are measured and can be up to 35 with the variation of the OLED current remaining in an acceptable range. Moreover, the proposed voltage-programmed driving scheme can be more valuable for an AMOLED display with high resolution, and may also be applied to other compensation pixel circuits. Project supported by the State Key Development Program for Basic Research of China (No. 2015CB655000) the National Natural Science Foundation of China (Nos. 61204089, 61306099, 61036007, 51173049, U1301243), and the Fundamental Research Funds for the Central Universities (Nos. 2013ZZ0046, 2014ZZ0028).