Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility

PubMed Central

2011-01-01

Issues of morphology, nucleation, and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (≲600°C) and high (≳600°C) temperatures is studied by high resolution scanning tunneling microscopy. The atomic models of growth of both species of Ge huts--pyramids and wedges-- are proposed. The growth cycle of Ge QD arrays at low temperatures is explored. A problem of lowering of the array formation temperature is discussed with the focus on CMOS compatibility of the entire process; a special attention is paid upon approaches to reduction of treatment temperature during the Si(001) surface pre-growth cleaning, which is at once a key and the highest-temperature phase of the Ge/Si(001) quantum dot dense array formation process. The temperature of the Si clean surface preparation, the final high-temperature step of which is, as a rule, carried out directly in the MBE chamber just before the structure deposition, determines the compatibility of formation process of Ge-QD-array based devices with the CMOS manufacturing cycle. Silicon surface hydrogenation at the final stage of its wet chemical etching during the preliminary cleaning is proposed as a possible way of efficient reduction of the Si wafer pre-growth annealing temperature. PMID:21892938

Successful Cleaning and Study of Contamination of Si(001) in Ultrahigh Vacuum

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gheorghe, N. G.; Lungu, G. A.; Husanu, M. A.

2011-10-03

This paper presents the very first surface physics experiment performed in ultrahigh vacuum (UHV) in Romania, using a new molecular beam epitaxy (MBE) installation. Cleaning of a Si(001) wafer was achieved by using a very simple technique: sequences of annealing at 900-1000 deg. C in ultrahigh vacuum: low 10{sup -8} mbar, with a base pressure of 1.5x10{sup -10} mbar. The preparation procedure is quite reproducible and allows repeated cleaning of the Si(001) after contamination in ultrahigh vacuum. The Si(001) single crystal surface is characterized by low energy electron diffraction (LEED), reflection high energy electron diffraction (RHEED), and Auger electron spectroscopymore » (AES). The latter technique is utilized in order to investigate the sample contamination by the residual gas in the UHV chamber, as determined by a residual gas analyzer (RGA). Unambiguous assignment of oxidized and unoxidized silicon is provided; also, an important feature is that the LVV Auger peak at 90-92 eV cannot be solely attributed to clean Si (i.e. Si surrounded only by Si), but also to silicon atoms bounded with carbon. Even with a sum of partial pressures of oxygen and carbon containing molecules in the range of 5x10{sup -10} mbar, the sample is contaminated very quickly, having a (1/e) lifetime of about 76 minutes.« less

Reaction of Si(100) with NH3: Rate-limiting steps and reactivity enhancement via electronic excitation

NASA Astrophysics Data System (ADS)

Bozso, F.; Avouris, Ph.

1986-09-01

We report on the low-temperature reaction of ammonia with Si(100)-(2×1). The dangling bonds in the clean Si surface promote NH3 dissociation even at temperatures as low as 90 K. The N atoms thus produced occupy subsurface sites, while the H atoms bind to surface Si atoms, tie up the dangling bonds, and inactivate the surface. Thermal or electronic-excitation-induced hydrogen desorption restores the dangling bonds and the reactivity of the surface. Silicon nitride film growth is achieved at 90 K by simultaneous exposure of the Si surface to NH3 and an electron beam.

The (001) 3C SiC surface termination and band structure after common wet chemical etching procedures, stated by XPS, LEED, and HREELS

NASA Astrophysics Data System (ADS)

Tengeler, Sven; Kaiser, Bernhard; Ferro, Gabriel; Chaussende, Didier; Jaegermann, Wolfram

2018-01-01

The (001) surface of cubic silicon carbide (3C SiC) after cleaning, Ar sputtering and three different wet chemical etching procedures was thoroughly investigated via (angle resolved) XPS, HREELS, and LEED. While Ar sputtering was found to be unsuitable for surface preparation, all three employed wet chemical etching procedures (piranha/NH4F, piranha/HF, and RCA) provide a clean surface. HF as oxide removal agent tends to result in fluorine traces on the sample surface, despite thorough rinsing. All procedures yield a 1 × 1 Si-OH/C-H terminated surface. However, the XPS spectra reveal some differences in the resulting surface states. NH4F for oxide removal produces a flat band situation, whereas the other two procedures result in a slight downward (HF) or upward (RCA) band bending. Because the band bending is small, it can be concluded that the number of unsaturated surface defects is low.

Unidirectional endotaxial cobalt di-silicide nanowires on Si(110) substrates

NASA Astrophysics Data System (ADS)

Mahato, J. C.; Das, Debolina; Banu, Nasrin; Satpati, Biswarup; Dev, B. N.

2017-10-01

Self-organized growth of well-ordered endotaxial silicide nanowires (NWs) on clean Si(110) surfaces has been investigated by in situ scanning tunneling microscopy (STM) and transmission electron microscopy (TEM). Co deposition on clean Si(110) reconstructed surfaces at ∼600 °C produces unidirectional CoSi2 NWs by reaction of cobalt with the hot silicon substrate. STM investigations reveal four major types of distinct NWs, all growing along the [-110] in-plane direction except one type growing along the in-plane [-113] direction. There are also some nanodots. The cross-sectional TEM measurements show that the unidirectional NWs are of two types—flat-top and ridged. The NWs grow not only on the substrate but also into the substrate. CoSi2 in flat top NWs are in the same crystallographic orientation as the substrate Si and the buried interfaces between CoSi2 and Si are A-type. In the ridged NWs CoSi2 and Si are in different crystallographic orientations and the interfaces are B-type. The ridged NWs are in general wider and grow deeper into the substrate.

Unidirectional endotaxial cobalt di-silicide nanowires on Si(110) substrates.

PubMed

Mahato, J C; Das, Debolina; Banu, Nasrin; Satpati, Biswarup; Dev, B N

2017-10-20

Self-organized growth of well-ordered endotaxial silicide nanowires (NWs) on clean Si(110) surfaces has been investigated by in situ scanning tunneling microscopy (STM) and transmission electron microscopy (TEM). Co deposition on clean Si(110) reconstructed surfaces at ∼600 °C produces unidirectional CoSi 2 NWs by reaction of cobalt with the hot silicon substrate. STM investigations reveal four major types of distinct NWs, all growing along the [-110] in-plane direction except one type growing along the in-plane [-113] direction. There are also some nanodots. The cross-sectional TEM measurements show that the unidirectional NWs are of two types-flat-top and ridged. The NWs grow not only on the substrate but also into the substrate. CoSi 2 in flat top NWs are in the same crystallographic orientation as the substrate Si and the buried interfaces between CoSi 2 and Si are A-type. In the ridged NWs CoSi 2 and Si are in different crystallographic orientations and the interfaces are B-type. The ridged NWs are in general wider and grow deeper into the substrate.

Improved interface and electrical properties of atomic layer deposited Al2O3/4H-SiC

NASA Astrophysics Data System (ADS)

Suvanam, Sethu Saveda; Usman, Muhammed; Martin, David; Yazdi, Milad. G.; Linnarsson, Margareta; Tempez, Agnès; Götelid, Mats; Hallén, Anders

2018-03-01

In this paper we demonstrate a process optimization of atomic layer deposited Al2O3 on 4H-SiC resulting in an improved interface and electrical properties. For this purpose the samples have been treated with two pre deposition surface cleaning processes, namely CP1 and CP2. The former is a typical surface cleaning procedure used in SiC processing while the latter have an additional weak RCA1 cleaning step. In addition to the cleaning and deposition, the effects of post dielectric annealing (PDA) at various temperatures in N2O ambient have been investigated. Analyses by scanning electron microscopy show the presence of structural defects on the Al2O3 surface after annealing at 500 and 800 °C. These defects disappear after annealing at 1100 °C, possibly due to densification of the Al2O3 film. Interface analyses have been performed using X-ray photoelectron spectroscopy (XPS) and time-of-flight medium energy ion scattering (ToF MEIS). Both these measurements show the formation of an interfacial SiOx (0 < x < 2) layer for both the CP1 and CP2, displaying an increased thickness for higher temperatures. Furthermore, the quality of the sub-oxide interfacial layer was found to depend on the pre deposition cleaning. In conclusion, an improved interface with better electrical properties is shown for the CP2 sample annealed at 1100 °C, resulting in lower oxide charges, strongly reduced flatband voltage and leakage current, as well as higher breakdown voltage.

Hydrogen passivation of silicon(100) used as templates for low-temperature epitaxy and oxidation

NASA Astrophysics Data System (ADS)

Atluri, Vasudeva Prasad

Epitaxial growth, oxidation and ohmic contacts require surfaces as free as possible of physical defects and chemical contaminants, especially, oxygen and hydrocarbons. Wet chemical cleaning typically involves a RCA clean to remove contaminants by stripping the native oxide and regrowing a chemical oxide with only trace levels of carbon and metallic impurities. Low temperature epitaxy, T<800sp° C, limits the thermal budget for the desorption of impurities and surface oxides, and can be performed on processed structures. But, silicon dioxide cannot be desorbed at temperatures lower than 800sp°C. Recently, hydrogen passivation of Si(111) has been reported to produce stable and ordered surfaces at low temperatures. Hydrogen can then be desorbed between 200sp°C and 600sp°C prior to deposition. In this work, Si(100) is passivated via a solution of hydrofluoric acid in alcohol (methanol, ethanol, or isopropyl alcohol) with HF concentrations between 0.5 to 10%. A rinse in water or alcohol is performed after etching to remove excess fluorine. This work investigates wet chemical cleaning of Si(100) to produce ordered, hydrogen-terminated, oxygen- and carbon-free surfaces to be used as templates for low temperature epitaxial growth and rapid thermal oxidation. Ion beam analysis, Tapping mode atomic force microscopy, Fourier transform infrared spectroscopy, Secondary ion mass spectroscopy, Chemical etching, Capacitance-voltage measurements and Ellipsometry are used to measure, at the surface and interface, impurities concentration, residual disorder, crystalline order, surface topography, roughness, chemical composition, defects density, electrical characteristics, thickness, and refractive index as a function of cleaning conditions for homoepitaxial silicon growth and oxidation. The wetting characteristics of the Si(100) surfaces are measured with a tilting plate technique. Different materials are analyzed by ion beam analysis for use as hydrogen standards in elastic recoil detection of hydrogen on sample surfaces. The results obtained in this study provide a quantitative optimization of passivation of Si(100) surfaces and their use as templates for low temperature epitaxy and rapid thermal oxidation. Ion beam analysis shows that the total coverage of H increases during passivation of Si(100) via HF in alcohol, while Fourier transform infrared spectroscopy indicates that more complex termination than the formation of simple silicon hydrides occurs.

Anomalous structural evolution and √(3)×√(3) reconstruction of a clean Si(111) surface observed after thermal desorption of thallium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kocán, Pavel, E-mail: pavel.kocan@mff.cuni.cz; Krejčí, Ondřej; Tochihara, Hiroshi

2015-03-15

The authors have observed anomalous structural evolution of a clean Si(111) surface, which was prepared first by thallium (Tl) deposition on a Si(111)7 × 7 surface, leading to incomplete formation of a Tl/Si(111)1 × 1 structure at 300 °C and subsequent desorption of Tl at 350 °C. Thus prepared clean Si(111) surfaces exhibit structural changes with increase of temperature: 2×1→(√(3)×√(3))R30°→2×1→5×5→7×7, as observed by low-energy electron diffraction and scanning tunneling microscopy. Among the above structures, the (√(3)×√(3))R30° formed at 450–550 °C is found not to be a simple adatom structure. Instead, by means of ab-initio calculations a new metastable (√(3)×√(3))R30° reconstruction was found, having analogous structural features andmore » formation origin to a 2 × 1 reconstruction known as the Pandey chain model. This new (√(3)×√(3))R30° model is 0.09 eV per surface atom less favorable than the 2 × 1 reconstruction. A reason for the anomalous occurrence of the (√(3)×√(3))R30° structure is explored with an aid of Monte Carlo simulations.« less

Super-hydrophobic surfaces of SiO₂-coated SiC nanowires: fabrication, mechanism and ultraviolet-durable super-hydrophobicity.

PubMed

Zhao, Jian; Li, Zhenjiang; Zhang, Meng; Meng, Alan

2015-04-15

The interest in highly water-repellent surfaces of SiO2-coated SiC nanowires has grown in recent years due to the desire for self-cleaning and anticorrosive surfaces. It is imperative that a simple chemical treatment with fluoroalkylsilane (FAS, CF3(CF2)7CH2CH2Si(OC2H5)3) in ethanol solution at room temperature resulted in super-hydrophobic surfaces of SiO2-coated SiC nanowires. The static water contact angle of SiO2-coated SiC nanowires surfaces was changed from 0° to 153° and the morphology, microstructure and crystal phase of the products were almost no transformation before and after super-hydrophobic treatment. Moreover, a mechanism was expounded reasonably, which could elucidate the reasons for their super-hydrophobic behavior. It is important that the super-hydrophobic surfaces of SiO2-coated SiC nanowires possessed ultraviolet-durable (UV-durable) super-hydrophobicity. Copyright © 2014 Elsevier Inc. All rights reserved.

RF plasma cleaning of silicon substrates with high-density polyethylene contamination

NASA Astrophysics Data System (ADS)

Cagomoc, Charisse Marie D.; De Leon, Mark Jeffry D.; Ebuen, Anna Sophia M.; Gilos, Marlo Nicole R.; Vasquez, Magdaleno R., Jr.

2018-01-01

Upon contact with a polymeric material, microparticles from the polymer may adhere to a silicon (Si) substrate during device processing. The adhesion contaminates the surface and, in turn, leads to defects in the fabricated Si-based microelectronic devices. In this study, Si substrates with artificially induced high-density polyethylene (HDPE) contamination was exposed to 13.56 MHz radio frequency (RF) plasma utilizing argon and oxygen gas admixtures at a power density of 5.6 W/cm2 and a working pressure of 110 Pa for up to 6 min of treatment. Optical microscopy studies revealed the removal of up to 74% of the polymer contamination upon plasma exposure. Surface free energy (SFE) increased owing to the removal of contaminants as well as the formation of polar groups on the Si surface after plasma treatment. Atomic force microscopy scans showed a decrease in surface roughness from 12.25 nm for contaminated samples to 0.77 nm after plasma cleaning. The smoothening effect can be attributed to the removal of HDPE particles from the surface. In addition, scanning electron microscope images showed that there was a decrease in the amount of HDPE contaminants adhering onto the surface after plasma exposure.

Advances on aluminum first-surface solar reflectors

NASA Astrophysics Data System (ADS)

Almanza, Rafael; Chen, Jiefeng; Mazari, Marcos

1992-11-01

Aluminum first surface mirrors have some advantages over second surface mirrors as has been discussed. At this stage of development some advantages are obtained: the first advantage was using two electron guns, one for aluminum evaporation permitting us to eliminate or to minimize the pinholes and the other to allow the evaporation of SiO without any mirror contamination as it was before due to the air when the chamber was opened to introduce the SiO, despite having only one e-gun in the laboratory. The second advantage was a better adherence between the aluminum film and the Si2O3, this last substance obtained with an oxidation of SiO with some oxygen inside the evaporation chamber (10-4 Torr). This improvement was due to the use of two e-guns that permit us not to open the chamber. These mirrors are actually under test in the environmental chamber for accelerated weather evaluations. One important aspect is the cleaning of the glass substrate. The chromic mixture cleaning is one of the most effective.

Etude Spectroscopique des Surfaces des Couches Minces de Silicium Amorphe Hydrogene

NASA Astrophysics Data System (ADS)

Bekkay, Touhami

In this work, we have studied the surface of hydrogenated a-Si and phosphorous doped a-Si:H,P. Due to the presence of unstable dangling bonds, these films are oxidized in the air after their preparation. XPS and UPS have been used to study these oxidized surfaces before and after plasma sputtering and wet chemical cleaning. We used deconvolution technique for the analysis of the spectra. First, the composition of a-Si:H films, prepared by plasma deposition at various power levels, has been determined by XPS. It has been found that films deposited using 5 W power contain SiH_4 molecules. This is confirmed by IR measurements. These molecules have not been seen in films prepared with a plasma power above 5 W. The XPS spectra of the surface oxide, before and after 3 keV sputtering by argon show that is impossible to completely remove these surface oxide ions. During sputtering, some oxygen atoms are forward scattered into the silicon substrat and form new oxidation states. UPS has been used to study the valence bands of the oxidized surfaces before and after HF cleaning. Prior to a chemical etch, the valence band analysis of the native SiO_2 indicates the presence of three O(2p) orbitals, in agreement with theory. Two are non-bonding orbitals and the third is associated with weak bonding to Si(3p). Two other orbitals have been identified at 10 eV and 11.8 eV. They correspond to O(2p)-Si(3p) and O(2p)-Si(3s) bonds respectively. A residual film containing -SiH, -SiO, SiOH and non-bonding orbitals has been found, after HF cleaning. A series of a-Si:H films have been doped with phosphine (PH_3). Their corresponding XPS spectra around 130 eV are dominated by the surface and bulk plasmon peaks. Numerical filtering has been used to distinguish between the phosphorous P(2p) peak located at 129.5 eV and the phosphorous oxide peak located at 134 eV. The increase in the intensity of these peaks as the (PH_3) increases indicates that a certain proportion of phosphorous is incorporated into the Si matrix and that the rest is oxidized. The shifts of the bulk Fermi level, E_{rm F}, and the surface Fermi level, E _{rm FS}, vary linearly with (PH_3). The difference between these two straight lines give the potential responsible for the bulk band bending. Close to the surface, the band bending is deduced by varying the detection angle in XPS measurements; a maximum value of 0.2 eV has been found in a depth range of 38 A to 105 A.

Total photoelectron yield spectroscopy of energy distribution of electronic states density at GaN surface and SiO2/GaN interface

NASA Astrophysics Data System (ADS)

Ohta, Akio; Truyen, Nguyen Xuan; Fujimura, Nobuyuki; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

2018-06-01

The energy distribution of the electronic state density of wet-cleaned epitaxial GaN surfaces and SiO2/GaN structures has been studied by total photoelectron yield spectroscopy (PYS). By X-ray photoelectron spectroscopy (XPS) analysis, the energy band diagram for a wet-cleaned epitaxial GaN surface such as the energy level of the valence band top and electron affinity has been determined to obtain a better understanding of the measured PYS signals. The electronic state density of GaN surface with different carrier concentrations in the energy region corresponding to the GaN bandgap has been evaluated. Also, the interface defect state density of SiO2/GaN structures was also estimated by not only PYS analysis but also capacitance–voltage (C–V) characteristics. We have demonstrated that PYS analysis enables the evaluation of defect state density filled with electrons at the SiO2/GaN interface in the energy region corresponding to the GaN midgap, which is difficult to estimate by C–V measurement of MOS capacitors.

The Selective Epitaxy of Silicon at Low Temperatures.

NASA Astrophysics Data System (ADS)

Lou, Jen-Chung

1991-01-01

This dissertation has developed a process for the selective epitaxial growth (SEG) of silicon at low temperatures using a dichlorosilane-hydrogen mixture in a hot-wall low pressure chemical vapor deposition (LPCVD) reactor. Some basic issues concerning the quality of epilayers --substrate preparation, ex-situ and in-situ cleaning, and deposition cycle, have been studied. We find it necessary to use a plasma etch to open epitaxial windows for the SEG of Si. A cycled plasma etch, a thin sacrificial oxide growth, and an oxide etching step can completely remove plasma-etch-induced surface damage and contaminants, which result in high quality epilayers. A practical wafer cleaning step is developed for low temperature Si epitaxial growth. An ex-situ HF vapor treatment can completely remove chemical oxide from the silicon surface and retard the reoxidation of the silicon surface. An in-situ low-concentration DCS cycle can aid in decomposition of surface oxide during a 900 ^circC H_2 prebake step. An HF vapor treatment combined with a low-concentration of DCS cycle consistently achieves defect-free epilayers at 850^circC and lower temperatures. We also show that a BF_sp{2}{+ } or F^+ ion implantation is a potential ex-situ wafer cleaning process for SEG of Si at low temperatures. The mechanism for the formation of surface features on Si epilayers is also discussed. Based on O ^+ ion implantation, we showed that the oxygen incorporation in silicon epilayers suppresses the Si growth rate. Therefore, we attribute the formation of surface features to the local reduction of the Si growth rate due to the dissolution of oxide islands at the epi/substrate interface. Finally, with this developed process for the SEG of silicon, defect-free overgrown epilayers are also obtained. This achievement demonstrates the feasibility for the future silicon-on-oxide (SOI) manufacturing technology.

Missing dimer defects investigated by adsorption of nitric oxide (NO) on silicon (100) 2 × 1

NASA Astrophysics Data System (ADS)

Sasse, A. G. B. M.; Kleinherenbrink, P. M.; Van Silfhout, A.

This paper describes a study concerning the interaction of nitric oxide (NO) with the clean Si(100)2×1 surface in ultra-high vacuum at room temperature. Differential reflectometry (DR) in the photon energy range of 2.4-4.4 eV. Auger electron spectroscopy (AES) and low energy electron diffraction (LEED) have been used to investigate the chemisorption of NO on Si(100)2×1. With this combination of techniques it is possible to make an analysis of the geometric and electronic structure and chemical composition of the surface layer. The aim of the present study was to explain the experimental results of the adsorption of NO on the clean Si(100)2×1 at 300 K. Analysing the electronic and geometric structure of a simplified stepped 2×1 reconstructed Si(100) surface and of the NO molecule in combination with the use of Woodward-Hoffmann rules (WHR) we were able to model a surface defect specific adsorption mechanism. Surface defects such as missing dimer defects seem to play an important role in the adsorption mechanism of NO on the silicon surface. The experimental results are consistent with this developed model. We also suggest a relation between the missing dimer defects and the number of steps on the silicon surface.

A New Technique to Produce Clean and Thin Silicon Films In Situ in a UHV Electron Microscope for TEM-TED Studies of Surfaces

NASA Astrophysics Data System (ADS)

Ozawa, Soh-ichiro; Yamanaka, Akira; Kobayashi, Kunio; Tanishiro, Yasumasa; Yagi, Katsumichi

1990-04-01

A new technique of in situ oxygen gas reaction thinning of Si films at around 750-800°C in an ultrahigh-vacuum electron microscope was developed. The technique produced films as thin as 10 to 20 nm. Such a thin film allows us to observe surface atomic steps, out-of-phase boundaries and {1/7 0}, {1/7 1/7} and {2/7 0} spots from the Si(111)7× 7 surface. These spots were not observed in previous studies, having been masked by strong inelastic scattering. The technique is useful not only for detecting clear diffraction spots of kinematical intensity for surface structure analysis but also for observation of high-resolution plan-view structure images of clean and adsorbed surfaces.

ToF-SIMS Investigation of the Effectiveness of Acid-Cleaning procedures for Genesis Solar Wind Collectors

NASA Technical Reports Server (NTRS)

Goreva, Y. S.; Humanyun, M.; Burnett, D. S.; Jurewicz, A. J.; Gonzalez, C. P.

2014-01-01

ToF-SIMS images of Genesis sample surfaces contain an incredible amount of important information, but they also show that the crash-derived surface contamination has many components, presenting a challenge to cleaning. Within the variability, we have shown that there are some samples which appear to be clean to begin with, e.g. 60471, and some are more contaminated. Samples 60493 and 60500 are a part of a focused study of the effectiveness of aqua regia and/or sulfuric acid cleaning of small flight Si implanted with Li-6 using ToF-SIMS.

Hydrogen generation due to water splitting on Si - terminated 4H-Sic(0001) surfaces

NASA Astrophysics Data System (ADS)

Li, Qingfang; Li, Qiqi; Yang, Cuihong; Rao, Weifeng

2018-02-01

The chemical reactions of hydrogen gas generation via water splitting on Si-terminated 4H-SiC surfaces with or without C/Si vacancies were studied by using first-principles. We studied the reaction mechanisms of hydrogen generation on the 4H-SiC(0001) surface. Our calculations demonstrate that there are major rearrangements in surface when H2O approaches the SiC(0001) surface. The first H splitting from water can occur with ground-state electronic structures. The second H splitting involves an energy barrier of 0.65 eV. However, the energy barrier for two H atoms desorbing from the Si-face and forming H2 gas is 3.04 eV. In addition, it is found that C and Si vacancies can form easier in SiC(0001)surfaces than in SiC bulk and nanoribbons. The C/Si vacancies introduced can enhance photocatalytic activities. It is easier to split OH on SiC(0001) surface with vacancies compared to the case of clean SiC surface. H2 can form on the 4H-SiC(0001) surface with C and Si vacancies if the energy barriers of 1.02 and 2.28 eV are surmounted, respectively. Therefore, SiC(0001) surface with C vacancy has potential applications in photocatalytic water-splitting.

A sturdy self-cleaning and anti-corrosion superhydrophobic coating assembled by amino silicon oil modifying potassium titanate whisker-silica particles

NASA Astrophysics Data System (ADS)

Lv, Chongjiang; Wang, Huaiyuan; Liu, Zhanjian; Zhang, Wenbo; Wang, Chijia; Tao, Ruifeng; Li, Meiling; Zhu, Yanji

2018-03-01

A sturdy self-cleaning and anticorrosion superhydrophobic coating based on poly(phenylene sulfide) (PPS) matrix has been successfully fabricated by combination of sol-gel and spraying technology without using any fluorine materials. The prepared coating possessed excellent superhydrophobicity with the water contact angle (WCA) (161 ± 1.2)° and slide angle (SA) (2 ± 1.5)°, which was ascribed to the synergistic effect of low-surface energy material amino silicon oil (ASO) and the binary potassium titanate whisker-silica (PTW-SiO2) composite particles formed by in-situ growth of SiO2 on modified PTW via sol-gel. Moreover, The PPS/ASO/PTW-SiO2 superhydrophobic coating exhibited decent self-cleaning property with clean surface even after 100 times immersion in muddy solution. The abrasion test demonstrated that the mechanical stability of prepared coating was about 2 times of the pure PPS coating. Simultaneously, the potentiodynamic polarization and electrochemical impedance spectroscopy testified the excellent corrosion resistance of prepared coating with the performance of lower corrosion current (1.289 × 10-10 A/cm2) and high protection efficiency (99.999%) even after immersion in 3.5 wt.% NaCl solution for 28 days. It is believed that this sturdy self-cleaning and anti-corrosion superhydrophobic coating might have a promising application prospect in industry.

Investigation of the Electrical Characteristics of Al/p-Si/Al Schottky Diode

NASA Astrophysics Data System (ADS)

Şenarslan, Elvan; Güzeldir, Betül; Sağlam, Mustafa

2016-04-01

In this study, p-type Si semiconductor wafer with (100) orientation, 400 μm thickness and 1-10 Ω cm resistivity was used. The Si wafer before making contacts were chemically cleaned with the Si cleaning procedure which for remove organic contaminations were ultrasonically cleaned at acetone and methanol for 10 min respectively and then rinsed in deionized water of 18 MΩ and dried with high purity N2. Then respectively RCA1(i.e., boiling in NH3+H2O2+6H2O for 10 min at 60°C ), RCA2 (i.e., boiling in HCl+H2O2+6H2O for 10 min at 60°C ) cleaning procedures were applied and rinsed in deionized water followed by drying with a stream of N2. After the cleaning process, the wafer is immediately inserted in to the coating unit. Ohmic contact was made by evaporating of Al on the non-polished side of the p-Si wafer pieces under ~ 4,2 10-6 Torr pressure. After process evaporation, p-Si with omic contac thermally annealed 580°C for 3 min in a quartz tube furnace in N2. Then, the rectifier contact is made by evaporation Al metal diameter of about 1.0 mm on the polished surface of p-Si in turbo molecular pump at about ~ 1 10-6 Torr. Consequently, Al/p-Si/Al Schottky diode was obtained. The I-V measurements of this diode performed by the use of a KEITLEY 487 Picoammeter/Voltage Source and the C-V measurements were performed with HP 4192A (50-13 MHz) LF Impedance Analyzer at room temperature and in dark.

Comparative surface studies on wet and dry sacrificial thermal oxidation on silicon carbide

NASA Astrophysics Data System (ADS)

Koh, A.; Kestle, A.; Wright, C.; Wilks, S. P.; Mawby, P. A.; Bowen, W. R.

2001-04-01

A comparative study on the effect of wet and dry thermal oxidation on 4H-silicon carbide (SiC) and on sacrificial silicon (Si) thermal oxidation on 4H-SiC surface has been conducted using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The AFM images show the formation of 'nano-islands' of varying density on the SiC surface after the removal of thermal oxide using hydrofluoric (HF) acid etch. These nano-islands are resistant to HF acid and have been previously linked to residual carbon [1-3] resulting from the oxidation process. This paper presents the use of a sacrificial silicon oxidation (SSO) step as a form of surface preparation that gives a reproducible clean SiC surface. XPS results show a slight electrical shift in binding energy between the wet and dry thermal oxidation on the standard SiC surface, while the surface produced by the SSO technique shows a minimal shift.

AFM AND XPS Characterization of Zinc-Aluminum Alloy Coatings with Attention to Surface Dross and Flow Lines

NASA Astrophysics Data System (ADS)

Harding, Felipe A.; Alarcon, Nelson A.; Toledo, Pedro G.

Surfaces of various zinc-aluminum alloy (Zn-Al) coated steel samples are studied with attention to foreign surface dross by atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS/ESCA). AFM topographic maps of zinc-aluminum alloy surfaces free of dross reveal the perfect nanoscale details of two kinds of dendrites: branched and globular. In all magnifications the dendrites appear smooth and, in general, very clean. XPS analysis of the extreme surface of a Zn-Al sample reveals Al, Zn, Si and O as the main components. The XPS results show no segregation or separation of phases other than those indicated by the ternary Al-Zn-Si diagram. For surfaces of Zn-Al plagued with impurities, high resolution AFM topographic maps reveal three situations: (1) areas with well-defined dendrites, relatively free of dross; (2) areas with small, millimeter-sized black spots known as dross; and (3) areas with large black stains, known as flow lines. Dendrite deformation and dross accumulation increase notably in the neighborhood, apparently clean to the naked eye, of dross or flow lines. XPS results of areas with dross and flow lines indicate unacceptable high concentration of Si and important Si phase separation. These results, in the light of AFM work, reveal that dross and flow lines are a consequence of a high local concentration of Si from high melting point silica and silicate impurities in the Zn-Al alloy source.

High efficiency silicon nanowire/organic hybrid solar cells with two-step surface treatment.

PubMed

Wang, Jianxiong; Wang, Hao; Prakoso, Ari Bimo; Togonal, Alienor Svietlana; Hong, Lei; Jiang, Changyun; Rusli

2015-03-14

A simple two-step surface treatment process is proposed to boost the efficiency of silicon nanowire/PEDOT:PSS hybrid solar cells. The Si nanowires (SiNWs) are first subjected to a low temperature ozone treatment to form a surface sacrificial oxide, followed by a HF etching process to partially remove the oxide. TEM investigation demonstrates that a clean SiNW surface is achieved after the treatment, in contrast to untreated SiNWs that have Ag nanoparticles left on the surface from the metal-catalyzed etching process that is used to form the SiNWs. The cleaner SiNW surface achieved and the thin layer of residual SiO2 on the SiNWs have been found to improve the performance of the hybrid solar cells. Overall, the surface recombination of the hybrid SiNW solar cells is greatly suppressed, resulting in a remarkably improved open circuit voltage of 0.58 V. The power conversion efficiency has also increased from about 10% to 12.4%. The two-step surface treatment method is promising in enhancing the photovoltaic performance of the hybrid silicon solar cells, and can also be applied to other silicon nanostructure based solar cells.

Effect of different methods of preliminary surface treatment and magnetron sputtering on the adhesion of Si coatings

NASA Astrophysics Data System (ADS)

Borisov, D. P.; Slabodchikov, V. A.; Kuznetsov, V. M.

2017-05-01

The paper presents research results on the adhesion of Si coatings deposited by magnetron sputtering on NiTi substrates after preliminary surface treatment (cleaning and activation) with low-energy ion beams and gas discharge plasma. The adhesion properties of the coatings obtained by two methods are analyzed and compared using data of scratch and spherical abrasion tests.

Buckling reversal of the Si(111) bilayer termination of 2-dimensional ErSi2 upon H dosing

NASA Astrophysics Data System (ADS)

Wetzel, P.; Pirri, C.; Gewinner, G.

1997-05-01

Hydrogen-induced reconstruction of 2-dimensional (2D) ErSi2 epitaxially grown on Si(111) is studied by Auger-electron diffraction (AED) and low-energy electron diffraction (LEED). The intensity of the Er MNN Auger line is measured vs. polar angle along the [1 - 2 1] and [- 1 2 - 1] azimuths for clean and H-saturated (1 × 1) ErSi2 silicides. The atomic structure of clean 2D silicide, previously established by AED as well as other techniques, consists of a hexagonal monolayer of Er located underneath a buckled Si layer comparable to the Si(111) substrate double layers. Moreover, for clean 2D ErSi2 only the B-type orientation is observed, i.e. the buckled Si top layer is always rotated by 180° around the surface normal relative to the relevant double layers of the substrate. After atomic H saturation, AED reveals drastic changes in the silicide structure involving a major most remarkable reconstruction of the Si bilayer termination. The latter is found to switch from B-type to A-type orientation upon H dosing, i.e. H-saturated 2D ErSi2 exhibits a buckled Si top layer oriented in the same way as the substrate double layers. A comparison with single scattering cluster simulations demonstrates that the latter phenomenon is accompanied by a large expansion of the Er-Si interlayer spacing close to 0.3 Å.

Super-hydrophobic self-cleaning bead-like SiO2@PTFE nanofiber membranes for waterproof-breathable applications

NASA Astrophysics Data System (ADS)

Liang, Yueyao; Ju, Jingge; Deng, Nanping; Zhou, Xinghai; Yan, Jing; Kang, Weimin; Cheng, Bowen

2018-06-01

Superhydrophobic waterproof-breathable membranes, which possess a huge superiority in multi-functional applications including self-cleaning, anti-icing, anticorrosion and protective clothing, have aroused considerable attention owing to their excellent performance. Herein, the robust superhydrophobic microporous fibrous membranes were efficiently prepared via a facile and environmental-friendly electro-blown spinning (EBS) technique followed by calcination. Compared with hydrophobic pure PTFE fibrous membranes, the bead-like SiO2@PTFE nanofiber membranes (BLNFMs) exhibited superhydrophobic surface with the advancing water angle (θadv) and the water contact angle (WCA) up to 161° and 155°, respectively. The SiO2 nanoparticles were introduced as fillers which can alter the pore structure and form the multilevel rough surface. The BLNFMs could maintain superhydrophobic surface even after abrasion for 30 times or exposing to a strong corrosive solution with PH from 0 to 12 for 24 h. Besides, the BLNFMs were endowed with the modest vapor permeability (9.7 kg·m-2·d-1) and air permeability (7.2 mm·s-1) when the concentration of SiO2 nanoparticles reached to 7.3 wt%. In addition, a potential relationship among θadv, maximum pore size (dmax) and breathability (effective breathing area) was proposed in order to design the waterproof-breathable membranes with excellent properties. Furthermore, the superhydrophobic membranes with durable self-cleaning property provided the advantages of potential applications in the fields of membrane distillation, versatile protective clothing, etc.

Shattering of SiMe3+ during surface-induced dissociation

NASA Astrophysics Data System (ADS)

Schultz, David G.; Hanley, Luke

1998-12-01

We provide experimental evidence that upon hyperthermal impact of Si(CD3)3+ ions with an organic surface, a portion of the ions undergo dissociation while still in contact with the surface. We use a tandem configuration of quadrupole mass spectrometers along with an energy analyzer to measure the kinetic energy distributions of the fragments that form as a result of the surface scattering of 25 eV Si(CD3)3+. These distributions are different for scattering from a clean Au(111) surface versus scattering from an organic surface composed of a self-assembled monolayer of hexanethiolate on Au(111). Parent and fragment ions recoil from the clean Au(111) surface with the same velocity, as is expected for fragmentation away from the surface. However, the same scattering products recoil from the organic surface with different velocities but similar energies, suggesting that the fragmentation dynamics are modified by surface interactions. We perform molecular dynamics simulations which predict residence times of ˜210 fs at the organic surface and ˜20 fs at the Au surface. The simulations also predict that 13% and 31% of the ions fragment within 1.1 ps of surface impact at the organic and Au surfaces, respectively. Thus, the experimental observation of dissociation at only the organic surface results from its longer ion-surface interaction time. The fragmentation time scale predicted by Rice-Ramsperger-Kassel-Marcus calculations is yet longer, suggesting that at least a portion of the surface-induced dissociation of Si(CD3)3+ may occur via a nonstatistical mechanism. Our interpretation draws heavily from an analogous "shattering" mechanism previously proposed for cluster-surface scattering [E. Hendell, U. Even, T. Raz, and R. D. Levine, Phys. Rev. Lett. 75, 2670 (1995)].

Stereo-selective binding of chlorobenzene on Si(111)-7×7

NASA Astrophysics Data System (ADS)

Cao, Y.; Deng, J. F.; Xu, G. Q.

2000-03-01

The adsorption and binding of chlorobenzene (C6H5Cl) on clean and D-modified Si(111)-7×7 surfaces have been investigated using high resolution electron energy loss spectroscopy (HREELS) and thermal desorption spectroscopy (TDS). On a clean surface, both chemisorbed and physisorbed C6H5Cl are observed at an adsorption temperature of 110 K. The HREEL spectra show direct evidence for the presence of both sp2 and sp3 carbon atoms in chemisorbed C6H5Cl molecules on Si(111)-7×7. Upon D-modification, the chemisorption of C6H5Cl decreases rapidly with increasing D-coverage (θD). At θD=1/3 ML, only physisorbed chlorobenzene is detected, which strongly suggests the involvement of rest-atoms in the chemisorption of C6H5Cl. Combined with the scanning tunneling microscopy (STM) results by Chen et al. [Surf. Sci. 340, 224 (1995)] showing the participation of adatoms in the binding, we propose that the 2,5-carbon atoms in C6H5Cl are stereo-selectively di-σ bonded to a pair of adjacent adatom and rest-atom on the Si(111)-7×7 surface, yielding a 2,5-chlorocyclohexadienelike surface adduct.

Growth of high-quality AlN epitaxial film by optimizing the Si substrate surface

NASA Astrophysics Data System (ADS)

Huang, Liegen; Li, Yuan; Wang, Wenliang; Li, Xiaochan; zheng, Yulin; Wang, Haiyan; Zhang, Zichen; Li, Guoqiang

2018-03-01

High-quality AlN epitaxial films have been grown on Si substrates by optimizing the hydrofluoric acid (HF) solution for cleaning of Si substrates. Effect of the Si substrate surface on the surface morphology and structural property of AlN epitaxial films is investigated in detail. It is revealed that as the concentration of HF solution increases from 0 to 2.0%, the surface morphology and the crystalline quality are initially improved and then get worse, and show an optimized value at 1.5%. The as-grown ∼200 nm-thick AlN epitaxial films on Si substrates grown with HF solution of 1.5% reveal the root-mean-square (RMS) surface roughness of 0.49 nm and the full-width at half-maximum for AlN(0002) X-ray rocking curve of 0.35°, indicating the smooth surface morphology and the high crystalline quality. The corresponding mechanism is proposed to interpret the effect of Si substrate surface on surface morphology and structural property of AlN epitaxial films, and provides an effective approach for the perspective fabrication of AlN-based devices.

Surface and Interface Study of PdCr/SiC Schottky Diode Gas Sensor Annealed at 425 C

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Knight, Dak

1998-01-01

The surface and interface properties of Pd(sub 0.9)Cr(sub 0.1/SiC Schottky diode gas sensor both before and after annealing are investigated using Auger Electron Spectroscopy (AES), Scanning Electron Microscopy (SEM), and Energy Dispersive Spectroscopy (EDS). At room temperature the alloy reacted with SiC and formed Pd(sub x)Si only in a very narrow interfacial region. After annealing for 250 hours at 425 deg. C, the surface of the Schottky contact area has much less silicon and carbon contamination than that found on the surface of an annealed Pd/SiC structure. Pd(sub x)Si formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. The chromium concentration with respect to palladium is quite uniform down to the deep interface region. A stable catalytic surface and a clean layer of Pd(sub 0.9)Cr(sub 0.1) film are likely responsible for significantly improved device sensitivity.

Surface and Interface Properties of PdCr/SiC Schottky Diode Gas Sensor Annealed at 425 C

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Knight, Dak

1998-01-01

The surface and interface properties of Pd(0.9,)Cr(0.1)/SiC Schottky diode gas sensors both before and after annealing are investigated using Auger electron spectroscopy (AES), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS). At room temperature the alloy reacted with SiC and formed Pd,Si only in a very narrow interfacial region. After annealing for 250 h ,It 425 C, the surface of the Schottky contact area his much less silicon and carbon contamination than that found on the surface of an annealed Pd/SiC structure. Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. The chromium concentration with respect to palladium is quite uniform down to the deep interface region. A stable catalytic surface and a clean layer of Pd(0.9)Cr(0.1) film are likely responsible for significantly improved device sensitivity.

Surface and Interface Properties of PdCr/SiC Schottky Diode Gas Sensor Annealed at 425 C

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Knight, Dak

1998-01-01

The surface and interface properties of Pd(0.9)Cr(0.1)/SiC Schottky diode gas sensors both before and after annealing are investigated using Auger Electron Spectroscopy (AES), Scanning Electron Microscopy (SEM), and Energy Dispersive Spectroscopy (EDS). At room temperature the alloy reacted with SiC and formed Pd(x)Si only in a very narrow interfacial region. After annealing for 250 hours at 425 C, the surface of the Schottky contact area has much less silicon and carbon contamination than that found on the surface of an annealed Pd/SiC structure. Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. The chromium concentration with respect to palladium is quite uniform down to the deep interface region. A stable catalytic surface and a clean layer of Pd(0.9)Cr(0.1) film are likely responsible for significantly improved device sensitivity.

Shear strength of metal - SiO2 contacts

NASA Technical Reports Server (NTRS)

Pepper, S. V.

1978-01-01

The strength of the bond between metals and SiO2 is studied by measuring the static coefficient of friction of metals contacting alpha-quartz in ultrahigh vacuum. It was found that copper with either chemisorbed oxygen, nitrogen or sulphur exhibited higher contact strength on stoichiometric SiO2 than did clean copper. Since the surface density of states induced by these species on copper is similar, it appears that the strength of the interfacial bond can be related to the density of states on the metal surface.

Shear strength of metal - SiO2 contacts

NASA Technical Reports Server (NTRS)

Pepper, S. V.

1978-01-01

The strength of the bond between metals and SiO2 was studied by measuring the static coefficient of friction of metals contacting alpha-quartz in ultrahigh vacuum. It was found that copper with either chemisorbed oxygen, nitrogen, or sulphur exhibited higher contact strength on stoichiometric SiO2 than did clean copper. Since the surface density of states induced by these species on copper is similar, it appears that the strength of the interfacial bond can be related to the density of states on the metal surface.

Cleaning Genesis Solar Wind Collectors with Ultrapure Water: Residual Contaminant Particle Analysis

NASA Technical Reports Server (NTRS)

Allton, J. H.; Wentworth, S. J.; Rodriquez, M. C.; Calaway, M. J.

2008-01-01

Additional experience has been gained in removing contaminant particles from the surface of Genesis solar wind collectors fragments by using megasonically activated ultrapure water (UPW)[1]. The curatorial facility has cleaned six of the eight array collector material types to date: silicon (Si), sapphire (SAP), silicon-on-sapphire (SOS), diamond-like carbon-on-silicon (DOS), gold-on-sapphire (AuOS), and germanium (Ge). Here we make estimates of cleaning effectiveness using image analysis of particle size distributions and an SEM/EDS reconnaissance of particle chemistry on the surface of UPW-cleaned silicon fragments (Fig. 1). Other particle removal techniques are reported by [2] and initial assessment of molecular film removal is reported by [3].

Selective adsorption of toluene-3,4-dithiol on Si(553)-Au surfaces

NASA Astrophysics Data System (ADS)

Suchkova, Svetlana; Hogan, Conor; Bechstedt, Friedhelm; Speiser, Eugen; Esser, Norbert

2018-01-01

The adsorption of small organic molecules onto vicinal Au-stabilized Si(111) surfaces is shown to be a versatile route towards controlled growth of ordered organic-metal hybrid one-dimensional nanostructures. Density functional theory is used to investigate the site-specific adsorption of toluene-3,4-dithiol (TDT) molecules onto the clean Si(553)-Au surface and onto a co-doped surface whose steps are passivated by hydrogen. We find that the most reactive sites involve bonding to silicon at the step edge or on the terraces, while gold sites are relatively unfavored. H passivation and TDT adsorption both induce a controlled charge redistribution within the surface layer, causing the surface metallicity, electronic structure, and chemical reactivity of individual adsorption sites to be substantially altered.

Development of an Apparatus for High-Resolution Auger Photoelectron Coincidence Spectroscopy (APECS) and Electron Ion Coincidence (EICO) Spectroscopy

NASA Astrophysics Data System (ADS)

Kakiuchi, Takuhiro; Hashimoto, Shogo; Fujita, Narihiko; Mase, Kazuhiko; Tanaka, Masatoshi; Okusawa, Makoto

We have developed an electron electron ion coincidence (EEICO) apparatus for high-resolution Auger photoelectron coincidence spectroscopy (APECS) and electron ion coincidence (EICO) spectroscopy. It consists of a coaxially symmetric mirror electron energy analyzer (ASMA), a miniature double-pass cylindrical mirror electron energy analyzer (DP-CMA), a miniature time-of-flight ion mass spectrometer (TOF-MS), a magnetic shield, an xyz stage, a tilt-adjustment mechanism, and a conflat flange with an outer diameter of 203 mm. A sample surface was irradiated by synchrotron radiation, and emitted electrons were energy-analyzed and detected by the ASMA and the DP-CMA, while desorbed ions were mass-analyzed and detected by the TOF-MS. The performance of the new EEICO analyzer was evaluated by measuring Si 2p photoelectron spectra of clean Si(001)-2×1 and Si(111)-7×7, and by measuring Si-L23VV-Si-2p Auger photoelectron coincidence spectra (Si-L23VV-Si-2p APECS) of clean Si(001)-2×1.

Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition.

PubMed

Liu, Donghua; Chen, Xiaosong; Hu, Yibin; Sun, Tai; Song, Zhibo; Zheng, Yujie; Cao, Yongbin; Cai, Zhi; Cao, Min; Peng, Lan; Huang, Yuli; Du, Lei; Yang, Wuli; Chen, Gang; Wei, Dapeng; Wee, Andrew Thye Shen; Wei, Dacheng

2018-01-15

Graphene is regarded as a potential surface-enhanced Raman spectroscopy (SERS) substrate. However, the application of graphene quantum dots (GQDs) has had limited success due to material quality. Here, we develop a quasi-equilibrium plasma-enhanced chemical vapor deposition method to produce high-quality ultra-clean GQDs with sizes down to 2 nm directly on SiO 2 /Si, which are used as SERS substrates. The enhancement factor, which depends on the GQD size, is higher than conventional graphene sheets with sensitivity down to 1 × 10 -9  mol L -1 rhodamine. This is attributed to the high-quality GQDs with atomically clean surfaces and large number of edges, as well as the enhanced charge transfer between molecules and GQDs with appropriate diameters due to the existence of Van Hove singularities in the electronic density of states. This work demonstrates a sensitive SERS substrate, and is valuable for applications of GQDs in graphene-based photonics and optoelectronics.

Detecting Fermi-level shifts by Auger electron spectroscopy in Si and GaAs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Debehets, J.; Homm, P.; Menghini, M.

In this paper, changes in surface Fermi-level of Si and GaAs, caused by doping and cleaning, are investigated by Auger electron spectroscopy. Based on the Auger voltage contrast, we compared the Auger transition peak energy but with higher accuracy by using a more accurate detector and an improved peak position determination method. For silicon, a peak shift as large as 0.46 eV was detected when comparing a cleaned p-type and n-type wafer, which corresponds rather well with the theoretical difference in Fermi-level. If no cleaning was applied, the peak position did not differ significantly for both wafer types, indicating Fermi-levelmore » pinning in the band gap. For GaAs, peak shifts were detected after cleaning with HF and (NH4)2S-solutions in an inert atmosphere (N2-gas). Although the (NH4)2S-cleaning in N2 is very efficient in removing the oxygen from the surface, the observed Ga- and As-peak shifts are smaller than those obtained after the HF-cleaning. It is shown that the magnitude of the shift is related to the surface composition. After Si-deposition on the (NH4)2S-cleaned surface, the Fermi-level shifts back to a similar position as observed for an as-received wafer, indicating that this combination is not successful in unpinning the Fermi-level of GaAs. This work has been funded by J.D.'s PhD fellowship of the Fund of Scientific Research-Flanders (FWO-V) (Dossier No. 11U4516N). P.H. acknowledges support from Becas Chile-CONICYT. This research was also supported by the FWO Odysseus Program, the Belgian Hercules Stichting with the Project No. Her/08/25 and AKUL/13/19 and the KU Leuven project GOA "Fundamental challenges in Semiconductor Research". The authors would also like to thank Bastiaan Opperdoes and Ludwig Henderix for technical support. The work was supported by the U.S. Department of Energy (USDOE), Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, and performed in the Environmental Molecular Sciences Laboratory, a national scientific user facility sponsored by the Department of Energy's Office of Biological and Environmental Research and located at Pacific Northwest National Laboratory (PNNL). Battelle operates PNNL for the USDOE under contract DE-AC05-76RL01830.« less

High performance and reusable SERS substrates using Ag/ZnO heterostructure on periodic silicon nanotube substrate

NASA Astrophysics Data System (ADS)

Lai, Yi-Chen; Ho, Hsin-Chia; Shih, Bo-Wei; Tsai, Feng-Yu; Hsueh, Chun-Hway

2018-05-01

Surface-enhanced Raman scattering (SERS) substrate with a higher surface area, enhanced light harvesting, multiple hot spots and strong electromagnetic field enhancements would exhibit enhanced Raman signals. Herein, the Ag nanoparticle/ZnO nanowire heterostructure decorated periodic silicon nanotube (Ag@ZnO@SiNT) substrate was proposed and fabricated. The proposed structure employed as SERS-active substrate was examined, and the results showed both the high performance in terms of high sensitivity and good reproducibility. Furthermore, the Ag@ZnO@SiNT substrate demonstrated the self-cleaning performance through the photocatalytic degradation of probed molecules upon UV-irradiation. The results showed that the proposed nanostructure had high performance, good reproducibility and reusability, and it is a promising SERS-active substrate for molecular sensing and cleaning.

Auger-electron diffraction in the low kinetic-energy range: The Si(111)7×7 surface reconstruction and Ge/Si interface formation

NASA Astrophysics Data System (ADS)

de Crescenzi, M.; Gunnella, R.; Bernardini, R.; de Marco, M.; Davoli, I.

1995-07-01

We have investigated the Auger-electron diffraction (AED) of the L2,3VV Auger line of the clean 7×7 reconstructed Si(111) surface and the Ge/Si interface formed after a few monolayers (ML) of Ge deposition. The experimental AED in the low kinetic-energy regime has been interpreted within the framework of a multiple-scattering theory. The comparison of the AED data taken using both the x-ray source and an electron source evidences that the incident beam plays a negligible role when the experimental conditions require the use of an angular detector. The evolution of the Ge/Si(111) interface is studied by monitoring the intensity anisotropy of the Auger peaks of the two elements at room temperature (RT) and at 400 °C annealing temperature of the substrate. The evolution of the growth mechanism underlying the Ge/Si interface formation has been studied by exploiting the very low electron escape depth of this technique (<=5 Å). While at RT two monolayers of Ge deposition appear uniform and amorphous, the successive annealing induces an intermixing and a recrystallization only in the first two layers of the interface without any further interdiffusion. Furthermore, a Stranski-Krastanow growth mode has been deduced after deposition of 4 ML of Ge on a clean Si sample kept at 400 °C.

Processing for Highly Efficient AlGaN/GaN Emitters

DTIC Science & Technology

2009-09-09

effects of SiCl4 plasma treatment and subsequent cleaning in BOE, HCl, and NH4OH solutions on n-GaN and n- AlGaN surfaces using XPS and AES. The...was the as-grown GaN layer without any surface treatment while sample 2 was treated with SiCl4 plasma in a reactive ion etching (RIE) system with a...plasma self-bias voltage of −300 V for 60 s. Samples 3, 4, and 5 were treated with SiCl4 plasma and followed by a 2-min dip in NH4OH, HCl, and BOE

Collaborative Research: Fundamental Studies of Plasma Control Using Surface Embedded Electronic Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Overzet, Lawrence J.; Raja, L.

The research program was collaborative between the researchers at the University of Texas at Dallas and the University of Texas at Austin. The primary subject of this program was to investigate the possibility of active control of secondary electron emission (SEE) from surfaces in contact with plasmas and thereby actively control plasmas. Very few studies of ion-induced electron emission (IIEE) from semiconductors exist, and those that do exist primarily used high-energy ion beams in the experiments. Furthermore, those few studies took extreme measures to ensure that the measurements were performed on atomically clean surfaces because of the surface sensitivity ofmore » the IIEE process. Even a small exposure to air can change the IIEE yield significantly. In addition, much of the existing data for IIEE from semiconductors was obtained in the 1950s and ‘60s, when semiconductor materials were first being refined. As a result, nearly all of that data is for p-type Ge and Si. Before this investigation, experimental data on n-type materials was virtually non-existent. While the basic theory assumed that IIEE yields ought to be substantially independent of doping type and concentration, recent measurements of near atmospheric pressure plasmas and of breakdown suggested otherwise. These indirect measurements were made on surfaces that were not atomically clean and seemed to indicate that deep sub-surface changes to the bulk conduction band electron density could lead to substantial variations in the IIEE yield. Exactly in contradiction to the generally accepted theory. Insufficient direct data existed to settle the matter. We performed both experimental measurements and theoretical calculations of IIEE yields from both Si and Ge in order to help clarify whether or not conduction band electrons substantially change the IIEE yield. We used three wafers of each material to carry out the investigation: a heavily doped p-type, an intrinsic and a heavily doped n-type wafer. There was approximately a factor of 10 15 difference in the conduction band electron densities of the p-type and n-type Si wafers and a factor of 10 10 for Ge. We investigated semiconductor surfaces that were both chemically cleaned (not atomically clean) and sputter cleaned (much closer to atomically clean), since such measurements are more relevant to recent indirect measurements. In addition to IIEE measurements, X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) were utilized to better understand the results.« less

Oxidation of Ti silicide surfaces

NASA Astrophysics Data System (ADS)

Cros, A.; Pirri, C.; Derrien, J.

1985-04-01

The oxidation of clean Ti suicide surface prepared under ultra high vacuum conditions, has been studied by ultraviolet and X-ray photo-emission spectroscopy techniques. At room temperature, the oxide overlayer is composed of both TiO 2 and SiO 2. An annealing at 400-600°C provokes the reduction of TiO 2 in the form of Ti suboxide while the liberated oxygen atoms bond to Si. This is not due to the presence of Si atoms and is rather an intrinsic property of native TiO 2. The simultaneous presence at high temperature of both SiO 2 and Ti suboxide is attributed to the existence of a rate limiting process due to diffusion barriers.

HF treatment effect for carbon deposition on silicon (111) by DC sputtering technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aji, A. S., E-mail: aji.ravazes70@gmail.com; Darma, Y., E-mail: aji.ravazes70@gmail.com

Surface modifications of Si (111) substrate by HF solution for thin film carbon deposition have been systematically studied. Thin film carbon on Si (111) has been deposited using DC Unbalanced Magnetron Sputtering with carbon pellet doped by 5% Fe as the target. EDAX characterization confirmed that the carbon fraction on Si substrate much higher by dipping a clean Si substrate by HF solution before sputtering process in comparison with carbon fraction on Si substrate just after conventional RCA. Moreover, SEM and AFM images show the uniform thin film carbon on Si with HF treatment, in contrast to the Si withoutmore » HF solution treatment. These experimental results suggest that HF treatment of Si surface provide Si-H bonds on top Si surface that useful to enhance the carbon deposition during sputtering process. Furthermore, we investigate the thermal stability of thin film carbon on Si by thermal annealing process up to 900 °C. Atomic arrangements during annealing process were characterized by Raman spectroscopy. Raman spectra indicate that thin film carbon on Si is remaining unchanged until 600 °C and carbon atoms start to diffuse toward Si substrate after annealing at 900 °C.« less

Liquid-phase deposition of thin Si films by ballistic electro-reduction

NASA Astrophysics Data System (ADS)

Ohta, T.; Gelloz, B.; Kojima, A.; Koshida, N.

2013-01-01

It is shown that the nanocryatalline silicon ballistic electron emitter operates in a SiCl4 solution without using any counter electrodes and that thin amorphous Si films are efficiently deposited on the emitting surface with no contaminations and by-products. Despite the large electrochemical window of the SiCl4 solution, electrons injected with sufficiently high energies preferentially reduce Si4+ ions at the interface. Using an emitter with patterned line emission windows, a Si-wires array can be formed in parallel. This low-temperature liquid-phase deposition technique provides an alternative clean process for power-effective fabrication of advanced thin Si film structures and devices.

Surface cleaning for enhanced adhesion to packaging surfaces: Effect of oxygen and ammonia plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gaddam, Sneha; Dong, Bin; Driver, Marcus

2015-03-15

The effects of direct plasma chemistries on carbon removal from silicon nitride (SiN{sub x}) and oxynitride (SiO{sub x}N{sub y}) surfaces have been studied by in-situ x-ray photoelectron spectroscopy (XPS) and ex-situ contact angle measurements. The data indicate that O{sub 2} and NH{sub 3} capacitively coupled plasmas are effective at removing adventitious carbon from silicon nitride (SiN{sub x}) and Si oxynitride (SiO{sub x}N{sub y}) surfaces. O{sub 2} plasma treatment results in the formation of a silica overlayer. In contrast, the exposure to NH{sub 3} plasma results in negligible additional oxidation of the SiN{sub x} or SiO{sub x}N{sub y} surface. Ex-situ contactmore » angle measurements show that SiN{sub x} and SiO{sub x}N{sub y} surfaces exposed to oxygen plasma are initially more hydrophilic than surfaces exposed to NH{sub 3} plasma, indicating that the O{sub 2} plasma-induced SiO{sub 2} overlayer is highly reactive toward ambient. At longer ambient exposures (≳10 h), however, surfaces treated by either O{sub 2} or NH{sub 3} plasma exhibit similar steady state contact angles, correlated with rapid uptake of adventitious carbon, as determined by XPS. Surface passivation by exposure to molecular hydrogen prior to ambient exposure significantly retards the increase in contact angle upon exposure to ambient. The results suggest a practical route to enhancing the time available for effective bonding to surfaces in microelectronics packaging applications.« less

Effects of (NH4)2S x treatment on the surface properties of SiO2 as a gate dielectric for pentacene thin-film transistor applications

NASA Astrophysics Data System (ADS)

Hung, Cheng-Chun; Lin, Yow-Jon

2018-01-01

The effect of (NH4)2S x treatment on the surface properties of SiO2 is studied. (NH4)2S x treatment leads to the formation of S-Si bonds on the SiO2 surface that serves to reduce the number of donor-like trap states, inducing the shift of the Fermi level toward the conduction band minimum. A finding in this case is the noticeably reduced value of the SiO2 capacitance as the sulfurated layer is formed at the SiO2 surface. The effect of SiO2 layers with (NH4)2S x treatment on the carrier transport behaviors for the pentacene/SiO2-based organic thin-film transistor (OTFT) is also studied. The pentacene/as-cleaned SiO2-based OTFT shows depletion-mode behavior, whereas the pentacene/(NH4)2S x -treated SiO2-based OTFT exhibits enhancement-mode behavior. Experimental identification confirms that the depletion-/enhancement-mode conversion is due to the dominance competition between donor-like trap states in SiO2 near the pentacene/SiO2 interface and acceptor-like trap states in the pentacene channel. A sulfurated layer between pentacene and SiO2 is expected to give significant contributions to carrier transport for pentacene/SiO2-based OTFTs.

Reactions of Persistent Carbenes with Hydrogen-Terminated Silicon Surfaces.

PubMed

Zhukhovitskiy, Aleksandr V; Mavros, Michael G; Queeney, K T; Wu, Tony; Voorhis, Troy Van; Johnson, Jeremiah A

2016-07-13

Surface passivation has enabled the development of silicon-based solar cells and microelectronics. However, a number of emerging applications require a paradigm shift from passivation to functionalization, wherein surface functionality is installed proximal to the silicon surface. To address this need, we report here the use of persistent aminocarbenes to functionalize hydrogen-terminated silicon surfaces via Si-H insertion reactions. Through the use of model compounds (H-Si(TMS)3 and H-Si(OTMS)3), nanoparticles (H-SiNPs), and planar Si(111) wafers (H-Si(111)), we demonstrate that among different classes of persistent carbenes, the more electrophilic and nucleophilic ones, in particular, a cyclic (alkyl)(amino)carbene (CAAC) and an acyclic diaminocarbene (ADAC), are able to undergo insertion into Si-H bonds at the silicon surface, forming persistent C-Si linkages and simultaneously installing amine or aminal functionality in proximity to the surface. The CAAC (6) is particularly notable for its clean insertion reactivity under mild conditions that produces monolayers with 21 ± 3% coverage of Si(111) atop sites, commensurate with the expected maximum of ∼20%. Atomic force and transmission electron microscopy, nuclear magnetic resonance, X-ray photoelectron, and infrared spectroscopy, and time-of-flight secondary ion mass spectrometry provided evidence for the surface Si-H insertion process. Furthermore, computational studies shed light on the reaction energetics and indicated that CAAC 6 should be particularly effective at binding to silicon dihydride, trihydride, and coupled monohyride motifs, as well as oxidized surface sites. Our results pave the way for the further development of persistent carbenes as universal ligands for silicon and potentially other nonmetallic substrates.

Metal/silicon Interfaces and Their Oxidation Behavior - Photoemission Spectroscopy Analysis.

NASA Astrophysics Data System (ADS)

Yeh, Jyh-Jye

Synchrotron radiation photoemission spectroscopy was used to study Ni/Si and Au/Si interface properties on the atomic scale at room temperature, after high temperature annealing and after oxygen exposures. Room temperature studies of metal/Si interfaces provide background for an understanding of the interface structure after elevated temperature annealing. Oxidation studies of Si surfaces covered with metal overlayers yield insight about the effect of metal atoms in the Si oxidation mechanisms and are useful in the identification of subtle differences in bonding relations between atoms at the metal/Si interfaces. Core level and valence band spectra with variable surface sensitivities were used to study the interactions between metal, Si, and oxygen for metal coverages and oxide thickness in the monolayer region. Interface morphology at the initial stage of metal/Si interface formation and after oxidation was modeled on the basis of the evolutions of metal and Si signals at different probing depths in the photoemission experiment. Both Ni/Si and Au/Si interfaces formed at room temperature have a diffusive region at the interface. This is composed of a layer of metal-Si alloy, formed by Si outdiffusion into the metal overlayer, above a layer of interstitial metal atoms in the Si substrate. Different atomic structures of these two regions at Ni/Si interface can account for the two different growth orientations of epitaxial Ni disilicides on the Si(111) surface after thermal annealing. Annealing the Au/Si interface at high temperature depletes all the Au atoms except for one monolayer of Au on the Si(111) surface. These phenomena are attributed to differences in the metal-Si chemical bonding relations associated with specific atomic structures. After oxygen exposures, both the Ni disilicide surface and Au covered Si surfaces (with different coverages and surface orderings) show silicon in higher oxidation states, in comparison to oxidized silicon on a clean surface. Preferential Si dioxide growth on the Au/Si surface is related to the strong distortion of the Si lattice when Au-Si bonds are formed. In comparison, a monolayer of Ni on a Si surface, with its weaker Ni-Si bond, does not enhance oxide formation.

A structural study of the K adsorption site on a Si(001)2 × 1 surface: Dimer, caves or both

NASA Astrophysics Data System (ADS)

Asensio, M. C.; Michel, E. G.; Alvarez, J.; Ocal, C.; Miranda, R.; Ferrer, S.

1989-04-01

The atomic structure of the clean Si(100) and K covered surfaces has been investigated by Auger electron diffraction (AED) monitoring the intensities along polar scans. This technique is sensitive to the asymmetric-dimer nature of the 2 × 1 reconstruction of the Si(001) surface. Data taken at room temperature for submonolayer coverages are consistent with adsorption of K on the troughs (cave position) existing between two consecutive dimer chains along the [110] direction. At 110 K both dimer and cave sites are occupied. A mild annealing to 300 K produces an overlayer redistribution in favor of the "cave" site further indicating that this site is energetically favoured as found in some recent calculations.

Surface passivation of nano-textured fluorescent SiC by atomic layer deposited TiO2

NASA Astrophysics Data System (ADS)

Lu, Weifang; Ou, Yiyu; Jokubavicius, Valdas; Fadil, Ahmed; Syväjärvi, Mikael; Petersen, Paul Michael; Ou, Haiyan

2016-07-01

Nano-textured surfaces have played a key role in optoelectronic materials to enhance the light extraction efficiency. In this work, morphology and optical properties of nano-textured SiC covered with atomic layer deposited (ALD) TiO2 were investigated. In order to obtain a high quality surface for TiO2 deposition, a three-step cleaning procedure was introduced after RIE etching. The morphology of anatase TiO2 indicates that the nano-textured substrate has a much higher surface nucleated grain density than a flat substrate at the beginning of the deposition process. The corresponding reflectance increases with TiO2 thickness due to increased surface diffuse reflection. The passivation effect of ALD TiO2 thin film on the nano-textured fluorescent 6H-SiC sample was also investigated and a PL intensity improvement of 8.05% was obtained due to the surface passivation.

Etude de L'interface Or/silicium Par Analyse de Surface et Microscopie Electronique

NASA Astrophysics Data System (ADS)

Lamontagne, Boris

In order to start with the cleanest c-Si surface achievable, two cleaning procedures have been used and compared: aqueous chemical cleaning with HF, and sputter cleaning followed by high temperature annealing; the former is found to be the most efficient of the two. We have observed the formation of Si-C bonds induced by energetic particles associated to sputtering and sputter deposition. One of the main objectives of this work was to compare the Au/Si interfaces obtained by e-beam evaporation and by sputter deposition; Ag/Si, Cu/Si and Al/Si interfaces have also been examined. X-ray photoelectron diffraction has allowed us to judge the quality of the substrate crystallinity under the metallic overlayer, a method which readily showed the amorphisation of the c-Si substrate induced by sputter deposition. Moreover, XPD has indicated the Au overlayer to be amorphous, while the Ag and Cu appear to grow heteroepitaxially on c-Si(100). A new XPS parameter has been developed to characterize the metal/Si interface state, in particular, broadening of the interface induced by the sputter deposition. For the case of evaporated layers, it indicates that Au/Si and Cu/Si interfaces are diffuse, while Ag/Si and Al/Si interfaces are abrupt. Atomic force microscopy has revealed that sputter deposition reduces the tendency to form metal islands, characteristic of some overlayer/substrate systems such as Ag/Si. Our experiments have illustrated the role of two "new" parameters which lead to better knowledge and control of the sputter deposition process, namely the ion masses and the sample position relative to that of the target position. In the scientific literature, the value of the critical thickness, d_{rm c} , for reaction between Au and Si is still a controversial issue, probably on account of calibration problems. By using newly observed XPS discontinuities, corresponding to the completion of the first and second Au monolayers, we have been able to resolve this problem, and thereby precisely evaluate the critical thickness, d_ {rm c} = 2 ML. We obtained various new information about the Au/Si interface using complementary methods (XPD, XPS, TEM, AFM, etc.) information from which we developed a new model of the Au/Si interface; this so called "cluster model" correlates the observed overlayer structural transition with the beginning of the reaction between Au and Si. It suggests that reconstruction of the overlayer at 2 ML thickness activates the reaction between Si and Au (Si-Si bonds disruption, followed by Si outdiffusion). This model seems to be the only one capable of explaining the difference in reactivity between Au/Si and Ag/Si interfaces. (Abstract shortened by UMI.).

Hydrofluosilicic acid as a cap and can etchant

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dixon, D.S.

1953-03-17

Aluminum caps and cans are thoroughly cleaned, before being used to can slugs, to insure wetting of the metal surfaces by molten AlSi in the canning pot. An acid bath is used, as part of the cleaning operations to remove surface oxide and other surface films from the metal. Two acid solutions are authorized in the standard operating procedure; a 20% phosphoric acid solution for etching both caps and cans, and a 1% hydrofluosilicic acid solution to be used for caps only. It is desired to determine the feasibility of using hydrofluosilicic acid exclusively as an etchant for both capsmore » and cans.« less

Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Höger, Ingmar, E-mail: ingmar.hoeger@ipht-jena.de; Gawlik, Annett; Brückner, Uwe

The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiO{sub x}N{sub y}) ormore » silicon oxide (SiO{sub 2}) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiO{sub x}N{sub y} formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiO{sub x}N{sub y} top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.« less

Producing lasting amphiphobic building surfaces with self-cleaning properties

NASA Astrophysics Data System (ADS)

Facio, Dario S.; Carrascosa, Luis A. M.; Mosquera, María J.

2017-06-01

Nowadays, producing building surfaces that prevent water and oil uptake and which present self-cleaning activity is still a challenge. In this study, amphiphobic (superhydrophobic and oleophobic) building surfaces were successfully produced. A simple and low-cost process was developed, which is applicable to large-scale building surfaces, according the following procedure: (1) by spraying a SiO2 nanocomposite which produces a closely-packed nanoparticle uniform topography; (2) by functionalizing the previous coating with a fluorinated alkoxysilane, producing high hydrophobicity and oleophobicity. The formation of a Cassie-Baxter regime, in which air pockets could be trapped between the aggregates of particles, was confirmed by topographic study. The building surface demonstrated an excellent self-cleaning performance. Finally, the surface presented lasting superhydrophobicity with high stability against successive attachment/detachment force cycles. This high durability can be explained by the effective grafting of the silica nanocomposite coating skeleton with the substrate, and with the additional fluorinated coating produced by condensation reactions.

Hydrogen desorption from hydrogen fluoride and remote hydrogen plasma cleaned silicon carbide (0001) surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

King, Sean W., E-mail: sean.king@intel.com; Tanaka, Satoru; Davis, Robert F.

2015-09-15

Due to the extreme chemical inertness of silicon carbide (SiC), in-situ thermal desorption is commonly utilized as a means to remove surface contamination prior to initiating critical semiconductor processing steps such as epitaxy, gate dielectric formation, and contact metallization. In-situ thermal desorption and silicon sublimation has also recently become a popular method for epitaxial growth of mono and few layer graphene. Accordingly, numerous thermal desorption experiments of various processed silicon carbide surfaces have been performed, but have ignored the presence of hydrogen, which is ubiquitous throughout semiconductor processing. In this regard, the authors have performed a combined temperature programmed desorptionmore » (TPD) and x-ray photoelectron spectroscopy (XPS) investigation of the desorption of molecular hydrogen (H{sub 2}) and various other oxygen, carbon, and fluorine related species from ex-situ aqueous hydrogen fluoride (HF) and in-situ remote hydrogen plasma cleaned 6H-SiC (0001) surfaces. Using XPS, the authors observed that temperatures on the order of 700–1000 °C are needed to fully desorb C-H, C-O and Si-O species from these surfaces. However, using TPD, the authors observed H{sub 2} desorption at both lower temperatures (200–550 °C) as well as higher temperatures (>700 °C). The low temperature H{sub 2} desorption was deconvoluted into multiple desorption states that, based on similarities to H{sub 2} desorption from Si (111), were attributed to silicon mono, di, and trihydride surface species as well as hydrogen trapped by subsurface defects, steps, or dopants. The higher temperature H{sub 2} desorption was similarly attributed to H{sub 2} evolved from surface O-H groups at ∼750 °C as well as the liberation of H{sub 2} during Si-O desorption at temperatures >800 °C. These results indicate that while ex-situ aqueous HF processed 6H-SiC (0001) surfaces annealed at <700 °C remain terminated by some surface C–O and Si–O bonding, they may still exhibit significant chemical reactivity due to the creation of surface dangling bonds resulting from H{sub 2} desorption from previously undetected silicon hydride and surface hydroxide species.« less

Controlled growth of standing Ag nanorod arrays on bare Si substrate using glancing angle deposition for self-cleaning applications

NASA Astrophysics Data System (ADS)

Singh, Dhruv P.; Singh, J. P.

2014-03-01

A facile approach to manipulate the hydrophobicity of surface by controlled growth of standing Ag nanorod arrays is presented. Instead of following the complicated conventional method of the template-assisted growth, the morphology or particularly average diameter and number density (nanorods cm-2) of nanorods were controlled on bare Si substrate by simply varying the deposition rate during glancing angle deposition. The contact angle measurements showed that the evolution of Ag nanorods reduces the surface energy and makes an increment in the apparent water contact angle compared to the plain Ag thin film. The contact angle was found to increase for the Ag nanorod samples grown at lower deposition rates. Interestingly, the morphology of the nanorod arrays grown at very low deposition rate (1.2 Å sec-1) results in a self-cleaning superhydrophobic surface of contact angle about 157° and a small roll-off angle about 5°. The observed improvement in hydrophobicity with change in the morphology of nanorod arrays is explained as the effect of reduction in solid fraction within the framework of Cassie-Baxter model. These self-cleaning Ag nanorod arrays could have a significant impact in wide range of applications such as anti-icing coatings, sensors and solar panels.

Direct formation of (CH sub 3 ) sub 2 HSiCl from silicon and CH sub 3 Cl

DOE Office of Scientific and Technical Information (OSTI.GOV)

Magrini, K.A.; Falconer, J.L.; Koel, B.E.

1989-07-13

A Cu-catalyzed reaction procedure was found for the selective formation of dimethylchlorosilane ((CH{sub 3}){sub 2}HSiCl) from the direct reaction of CH{sub 3}Cl with solid Si. The new procedure is a two-step process. A Cu/Si sample is prepared by evaporating Cu onto clean polycrystalline Si under ultrahigh vacuum, and the Cu/Si surface is first activated by exposure to 10% HSiCl{sub 3}/CH{sub 3}Cl at 598 K. After the HSiCl{sub 3}CH{sub 3}Cl mixture is evacuated from the reactor, the activated Cu/Si surface is reacted in fresh CH{sub 3}Cl. For low surface concentrations of Cu, the partially hydrogenated silane, (CH{sub 3}){sub 2}HSiCl, is selectivelymore » produced. Trichlorosilane was also found to activate polycrystalline Si (in the absence of Cu) for production of highly chlorinated methylchlorosilanes at a much higher rate than on the Cu/Si surface but with poor selectively to (CH{sub 3}){sub 2}HSiCl. All reactions are carried out at atmospheric pressure in a reactor that is attached to an ultrahigh-vacuum chamber. This allows surface analysis of Auger electron spectroscopy, which detected SiCl{sub x} on reacted surfaces. These SiCl{sub x} sites, which appear necessary for methylchlorosilane formation, are apparently formed during activation by HSiCl{sub 3}.« less

Investigation of photolithography process on SPOs for the Athena mission

NASA Astrophysics Data System (ADS)

Massahi, S.; Girou, D. A.; Ferreira, D. D. M.; Christensen, F. E.; Jakobsen, A. C.; Shortt, B.; Collon, M.; Landgraf, B.

2015-09-01

As part of the ongoing effort to optimize the throughput of the Athena optics we have produced mirrors with a state-of-the-art cleaning process. We report on the studies related to the importance of the photolithographic process. Pre-coating characterization of the mirrors has shown and still shows photoresist remnants on the SiO2- rib bonding zones, which influences the quality of the metallic coating and ultimately the mirror performance. The size of the photoresist remnants is on the order of 10 nm which is about half the thickness of final metallic coating. An improved photoresist process has been developed including cleaning with O2 plasma in order to remove the remaining photoresist remnants prior to coating. Surface roughness results indicate that the SiO2-rib bonding zones are as clean as before the photolithography process is performed.

Silicide Nanowires for Low-Resistance CMOS Transistor Contacts.

NASA Astrophysics Data System (ADS)

Zollner, Stefan

2007-03-01

Transition metal (TM) silicide nanowires are used as contacts for modern CMOS transistors. (Our smallest wires are ˜20 nm thick and ˜50 nm wide.) While much research on thick TM silicides was conducted long ago, materials perform differently at the nanoscale. For example, the usual phase transformation sequences (e.g., Ni, Ni2Si, NiSi, NiSi2) for the reaction of thick metal films on Si no longer apply to nanostructures, because the surface and interface energies compete with the bulk energy of a given crystal structure. Therefore, a NiSi film will agglomerate into hemispherical droplets of NiSi by annealing before it reaches the lowest-energy (NiSi2) crystalline structure. These dynamics can be tuned by addition of impurities (such as Pt in Ni). The Si surface preparation is also a more important factor for nanowires than for silicidation of thick TM films. Ni nanowires formed on Si surfaces that were cleaned and amorphized by sputtering with Ar ions have a tendency to form NiSi2 pyramids (``spikes'') even at moderate temperatures (˜400^oC), while similar Ni films formed on atomically clean or hydrogen-terminated Si form uniform NiSi nanowires. Another issue affecting TM silicides is the barrier height between the silicide contact and the silicon transistor. For most TM silicides, the Fermi level of the silicide is aligned with the center of the Si band gap. Therefore, silicide contacts experience Schottky barrier heights of around 0.5 eV for both n-type and p-type Si. The resulting contact resistance becomes a significant term for the overall resistance of modern CMOS transistors. Lowering this contact resistance is an important goal in CMOS research. New materials are under investigation (for example PtSi, which has a barrier height of only 0.3 eV to p-type Si). This talk will describe recent results, with special emphasis on characterization techniques and electrical testing useful for the development of silicide nanowires for CMOS contacts. In collaboration with: P. Grudowski, D. Jawarani, R. Garcia, M.L. Kottke, R.B. Gregory, X.-D. Wang, D. Theodore, P. Fejes, W.J. Taylor, B.Y. Nguyen, C. Capasso, M. Raymond, D. Denning, K. Chang, R. Noble, M. Jahanbani, S. Bolton, P. Crabtree, D. Goedeke, M. Rossow, M. Chowdhury, H. Desjardins, A.Thean.

The effect of Ga pre-deposition on Si (111) surface for InAs nanowire selective area hetero-epitaxy

NASA Astrophysics Data System (ADS)

Liu, Ziyang; Merckling, Clement; Rooyackers, Rita; Franquet, Alexis; Richard, Olivier; Bender, Hugo; Vila, María; Rubio-Zuazo, Juan; Castro, Germán R.; Collaert, Nadine; Thean, Aaron; Vandervorst, Wilfried; Heyns, Marc

2018-04-01

Vertical InAs nanowires (NWs) grown on a Si substrate are promising building-blocks for next generation vertical gate-all-around transistor fabrication. We investigate the initial stage of InAs NW selective area epitaxy (SAE) on a patterned Si (111) substrate with a focus on the interfacial structures. The direct epitaxy of InAs NWs on a clean Si (111) surface is found to be challenging. The yield of vertical InAs NWs is low, as the SAE is accompanied by high proportions of empty holes, inclined NWs, and irregular blocks. In contrast, it is improved when the NW contains gallium, and the yield of vertical InxGa1-xAs NWs increased with higher Ga content. Meanwhile, unintentional Ga surface contamination on a patterned Si substrate induces high yield vertical InAs NW SAE, which is attributed to a GaAs-like seeding layer formed at the InAs/Si interface. The role of Ga played in the III-V NW nucleation on Si is further discussed. It stabilizes the B-polarity on a non-polar Si (111) surface and enhances the nucleation. Therefore, gallium incorporation on a Si surface is identified as an important enabler for vertical InAs NW growth. A new method for high yield (>99%) vertical InAs NW SAE on Si using an InGaAs nucleation layer is proposed based on this study.

Deposition of thin Si and Ge films by ballistic hot electron reduction in a solution-dripping mode and its application to the growth of thin SiGe films

NASA Astrophysics Data System (ADS)

Suda, Ryutaro; Yagi, Mamiko; Kojima, Akira; Mentek, Romain; Mori, Nobuya; Shirakashi, Jun-ichi; Koshida, Nobuyoshi

2015-04-01

To enhance the usefulness of ballistic hot electron injection into solutions for depositing thin group-IV films, a dripping scheme is proposed. A very small amount of SiCl4 or GeCl4 solution was dripped onto the surface of a nanocrystalline Si (nc-Si) electron emitter, and then the emitter is driven without using any counter electrodes. It is shown that thin Si and Ge films are deposited onto the emitting surface. Spectroscopic surface and compositional analyses showed no extrinsic carbon contaminations in deposited thin films, in contrast to the results of a previous study using the dipping scheme. The availability of this technique for depositing thin SiGe films is also demonstrated using a mixture SiCl4+GeCl4 solution. Ballistic hot electrons injected into solutions with appropriate kinetic energies promote preferential reduction of target ions with no by-products leading to nuclei formation for the thin film growth. Specific advantageous features of this clean, room-temperature, and power-effective process is discussed in comparison with the conventional dry and wet processes.

Synthesis and Characterization of Superhydrophobic, Self-cleaning NIR-reflective Silica Nanoparticles

NASA Astrophysics Data System (ADS)

Sriramulu, Deepa; Reed, Ella Louise; Annamalai, Meenakshi; Venkatesan, Thirumalai Venky; Valiyaveettil, Suresh

2016-11-01

Multifunctional coatings offer many advantages towards protecting various surfaces. Here we apply aggregation induced segregation of perylene diimide (PDI) to control the surface morphology and properties of silica nanoparticles. Differentially functionalized PDI was incorporated on the surface of silica nanoparticles through Si-O-Si bonds. The absorption and emission spectra of the resultant functionalised nanoparticles showed monomeric or excimeric peaks based on the amounts of perylene molecules present on the surface of silica nanoparticles. Contact angle measurements on thin films prepared from nanoparticles showed that unfunctionalised nanoparticles were superhydrophilic with a contact angle (CA) of 0°, whereas perylene functionalised silica particles were hydrophobic (CA > 130°) and nanoparticles functionalised with PDI and trimethoxy(octadecyl)silane (TMODS) in an equimolar ratio were superhydrophobic with static CA > 150° and sliding angle (SA) < 10°. In addition, the near infrared (NIR) reflectance properties of PDI incorporated silica nanoparticles can be used to protect various heat sensitive substrates. The concept developed in this paper offers a unique combination of super hydrophobicity, interesting optical properties and NIR reflectance in nanosilica, which could be used for interesting applications such as surface coatings with self-cleaning and NIR reflection properties.

Atomic-level spatial distributions of dopants on silicon surfaces: toward a microscopic understanding of surface chemical reactivity

NASA Astrophysics Data System (ADS)

Hamers, Robert J.; Wang, Yajun; Shan, Jun

1996-11-01

We have investigated the interaction of phosphine (PH 3) and diborane (B 2H 6) with the Si(001) surface using scanning tunneling microscopy, infrared spectroscopy, and ab initio molecular orbital calculations. Experiment and theory show that the formation of PSi heterodimers is energetically favorable compared with formation of PP dimers. The stability of the heterodimers arises from a large strain energy associated with formation of PP dimers. At moderate P coverages, the formation of PSi heterodimers leaves the surface with few locations where there are two adjacent reactive sites. This in turn modifies the chemical reactivity toward species such as PH 3, which require only one site to adsorb but require two adjacent sites to dissociate. Boron on Si(001) strongly segregates into localized regions of high boron concentration, separated by large regions of clean Si. This leads to a spatially-modulated chemical reactivity which during subsequent growth by chemical vapor deposition (CVD) leads to formation of a rough surface. The implications of the atomic-level spatial distribution of dopants on the rates and mechanisms of CVD growth processes are discussed.

Improvement of mechanical robustness of the superhydrophobic wood surface by coating PVA/SiO2 composite polymer

NASA Astrophysics Data System (ADS)

Liu, Feng; Wang, Shuliang; Zhang, Ming; Ma, Miaolian; Wang, Chengyu; Li, Jian

2013-09-01

Improvement of the robustness of superhydrophobic surfaces is crucial for the purpose of achieving commercial applications of these surfaces in such various areas as self-cleaning, water repellency and corrosion resistance. We have investigated a fabrication of polyvinyl alcohol (PVA)/silica (SiO2) composite polymer coating on wooden substrates with super repellency toward water, low sliding angles, low contact angle hysteresis, and relatively better mechanical robustness. The composite polymer slurry, consisting of well-mixing SiO2 particles and PVA, is prepared simply and subsequently coated over wooden substrates with good adhesion. In this study, the mechanical robustness of superhydrophobic wood surfaces was evaluated. The effect of petaloid structures of the composite polymer on robustness was investigated using an abrasion test and the results were compared with those of superhydrophobic wood surfaces fabricated by other processes. The produced wood surfaces exhibited promising superhydrophobic properties with a contact angle of 159̊ and a sliding angle of 4̊, and the relatively better mechanical robustness.

TiO2-SiO2 Coatings with a Low Content of AuNPs for Producing Self-Cleaning Building Materials

PubMed Central

Gil, M. L. Almoraima; Mosquera, María J.

2018-01-01

The high pollution levels in our cities are producing a significant increase of dust on buildings. An application of photoactive coatings on building materials can produce buildings with self-cleaning surfaces. In this study, we have developed a simple sol-gel route for producing Au-TiO2/SiO2 photocatalysts with application on buildings. The gold nanoparticles (AuNPs) improved the TiO2 photoactivity under solar radiation because they promoted absorption in the visible range. We varied the content of AuNPs in the sols under study, in order to investigate their effect on self-cleaning properties. The sols obtained were sprayed on a common building stone, producing coatings which adhere firmly to the stone and preserve their aesthetic qualities. We studied the decolourization efficiency of the photocatalysts under study against methylene blue and against soot (a real staining agent for buildings). Finally, we established that the coating with an intermediate Au content presented the best self-cleaning performance, due to the role played by its structure and texture on its photoactivity. PMID:29558437

Use of molecular oxygen to reduce EUV-induced carbon contamination of optics

NASA Astrophysics Data System (ADS)

Malinowski, Michael E.; Grunow, Philip A.; Steinhaus, Chip; Clift, W. Miles; Klebanoff, Leonard E.

2001-08-01

Carbon deposition and removal experiments on Mo/Si multilayer mirror (MLM) samples were performed using extreme ultraviolet (EUV) light on Beamline 12.0.1.2 of the Advanced Light Source, Lawrence Berkeley National Laboratory (LBNL). Carbon (C) was deposited onto Mo/Si multilayer mirror (MLM) samples when hydrocarbon vapors where intentionally introduced into the MLM test chamber in the presence of EUV at 13.44 nm (92.3eV). The carbon deposits so formed were removed by molecular oxygen + EUV. The MLM reflectivities and photoemission were measured in-situ during these carbon deposition and cleaning procedures. Auger Electron Spectroscopy (AES) sputter-through profiling of the samples was performed after experimental runs to help determine C layer thickness and the near-surface compositional-depth profiles of all samples studied. EUV powers were varied from ~0.2mW/mm2 to 3mW/mm2(at 13.44 nm) during both deposition and cleaning experiments and the oxygen pressure ranged from ~5x10-5 to 5x10-4 Torr during the cleaning experiments. C deposition rates as high as ~8nm/hr were observed, while cleaning rates as high as ~5nm/hr could be achieved when the highest oxygen pressure were used. A limited set of experiments involving intentional oxygen-only exposure of the MLM samples showed that slow oxidation of the MLM surface could occur.

A computational study on the energetics and mechanisms for the dissociative adsorption of SiHx(x = 1-4) on W(1 1 1) surface

NASA Astrophysics Data System (ADS)

Lin, Y. H.; Raghunath, P.; Lin, M. C.

2016-01-01

The adsorption and dissociation mechanisms of SiHx(x = 1-4) species on W(1 1 1) surface have been investigated by using the periodic density functional theory with the projector-augmented wave approach. The adsorption of all the species on four surface sites: top (T), bridge (B), shallow (S), and deep (D) sites have been analyzed. For SiH4 on a top site, T-SiH4(a), it is more stable with an adsorption energy of 2.6 kcal/mol. For SiH3, the 3-fold shallow site is most favorable with adsorption energy of 46.0 kcal/mol. For SiH2, its adsorption on a bridge site is most stable with 73.0 kcal/mol binding energy, whereas for SiH and Si the most stable adsorption configurations are on 3-fold deep sites with very high adsorption energies, 111.8 and 134.7 kcal/mol, respectively. The potential energy surfaces for the dissociative adsorption of all SiHx species on the W(1 1 1) surface have been constructed using the CINEB method. The barriers for H-atom migration from SiHx(a) to its neighboring W atoms, preferentially on B-sites, were predicted to be 0.4, 1.0, 4.5 and, 8.0 kcal/mol, respectively, for x = 4, 3, 2, and 1, respectively. The adsorption energy of the H atom on a bridge site on the clean W(1 1 1) surface was predicted to be 65.9 kcal/mol, which was found to be slightly affected by the co-adsorption of SiHx-1 within ± 1 kcal/mol.

Self-organized patterns along sidewalls of iron silicide nanowires on Si(110) and their origin

DOE Office of Scientific and Technical Information (OSTI.GOV)

Das, Debolina; Mahato, J. C.; Bisi, Bhaskar

Iron silicide (cubic FeSi{sub 2}) nanowires have been grown on Si(110) by reactive deposition epitaxy and investigated by scanning tunneling microscopy and scanning/transmission electron microscopy. On an otherwise uniform nanowire, a semi-periodic pattern along the edges of FeSi{sub 2} nanowires has been discovered. The origin of such growth patterns has been traced to initial growth of silicide nanodots with a pyramidal Si base at the chevron-like atomic arrangement of a clean reconstructed Si(110) surface. The pyramidal base evolves into a comb-like structure along the edges of the nanowires. This causes the semi-periodic structure of the iron silicide nanowires along theirmore » edges.« less

Antireflective hydrophobic si subwavelength structures using thermally dewetted Ni/SiO2 nanomask patterns.

PubMed

Joo, Dong Hyuk; Leem, Jung Woo; Yu, Jae Su

2011-11-01

We report the disordered silicon (Si) subwavelength structures (SWSs), which are fabricated with the use of inductively coupled plasma (ICP) etching in SiCl4 gas using nickel/silicon dioxide (Ni/SiO2) nanopattens as the etch mask, on Si substrates by varying the etching parameters for broadband antireflective and self-cleaning surfaces. For the fabricated Si SWSs, the antireflection characteristics are experimentally investigated and a theoretical analysis is made based on the rigorous coupled-wave analysis method. The desirable dot-like Ni nanoparticles on SiO2/Si substrates are formed by the thermal dewetting process of Ni films at 900 degrees C. The truncated cone shaped Si SWS with a high average height of 790 +/- 23 nm, which is fabricated by ICP etching with 5 sccm SiCl4 at 50 W RF power with additional 200 W ICP power under 10 mTorr process pressure, exhibits a low average reflectance of approximately 5% over a wide wavelength range of 450-1050 nm. The water contact angle of 110 degrees is obtained, indicating a hydrophobic surface. The calculated reflectance results are also reasonably consistent with the experimental data.

UHV-TEM-REM Studies of Si(111) Surfaces

NASA Astrophysics Data System (ADS)

Yagi, K.; Yamanaka, A.; Sato, H.; Shima, M.; Ohse, H.; Ozawa, S.; Tanishiro, Y.

Recent progresses of ultra-high vacuum transmission and reflection electron microscope studies of clean Si(111) surfaces are described. Anisotropy of surface atomic steps such as step energy, bunching of steps, are studied. Out of phase boundaries are observed in transmission mode and its energy relative to the step energy is studied. The phase transition between the 1 × 1 and the 7 × 7 structures around 830°C, studied previously is re-examined under various conditions. Contraction strains of the 7 × 7 structure and adatom density on terraces play important role during the transition. Diffuse scattering observed by LEED and RHEED above the transition temperature is not observed in teh TED pattern from a thin film.

Modeling Cl2/O2/Ar inductively coupled plasmas used for silicon etching: effects of SiO2 chamber wall coating

NASA Astrophysics Data System (ADS)

Tinck, S.; Boullart, W.; Bogaerts, A.

2011-08-01

In this paper, simulations are performed to gain a better insight into the properties of a Cl2/Ar plasma, with and without O2, during plasma etching of Si. Both plasma and surface properties are calculated in a self-consistent manner. Special attention is paid to the behavior of etch products coming from the wafer or the walls, and how the chamber walls can affect the plasma and the resulting etch process. Two modeling cases are considered. In the first case, the reactor walls are defined as clean (Al2O3), whereas in the second case a SiO2 coating is introduced on the reactor walls before the etching process, so that oxygen will be sputtered from the walls and introduced into the plasma. For this reason, a detailed reaction set is presented for a Cl2/O2/Ar plasma containing etched species, as well as an extensive reaction set for surface processes, including physical and chemical sputtering, chemical etching and deposition processes. Density and flux profiles of various species are presented for a better understanding of the bulk plasma during the etching process. Detailed information is also given on the composition of the surfaces at various locations of the reactor, on the etch products in the plasma and on the surface loss probabilities of the plasma species at the walls, with different compositions. It is found that in the clean chamber, walls are mostly chlorinated (Al2Cl3), with a thin layer of etch products residing on the wall. In the coated chamber, an oxy-chloride layer is grown on the walls for a few nanometers during the etching process. The Cl atom wall loss probability is found to decrease significantly in the coated chamber, hence increasing the etch rate. SiCl2, SiCl4 and SiCl3 are found to be the main etch products in the plasma, with the fraction of SiCl2 being always slightly higher. The simulation results compare well with experimental data available from the literature.

Pulse electrochemical meso/micro/nano ultraprecision machining technology.

PubMed

Lee, Jeong Min; Kim, Young Bin; Park, Jeong Woo

2013-11-01

This study demonstrated meso/micro/nano-ultraprecision machining through electrochemical reactions using intermittent DC pulses. The experiment focused on two machining methods: (1) pulse electrochemical polishing (PECP) of stainless steel, and (2) pulse electrochemical nano-patterning (PECNP) on a silicon (Si) surface, using atomic force microscopy (AFM) for fabrication. The dissolution reaction at the stainless steel surface following PECP produced a very clean, smooth workpiece. The advantages of the PECP process included improvements in corrosion resistance, deburring of the sample surface, and removal of hydrogen from the stainless steel surface as verified by time-of-flight secondary-ion mass spectrometry (TOF-SIMS). In PECNP, the electrochemical reaction generated within water molecules produced nanoscale oxide textures on a Si surface. Scanning probe microscopy (SPM) was used to evaluate nanoscale-pattern processing on a Si wafer surface produced by AFM-PECNP For both processes using pulse electrochemical reactions, three-dimensional (3-D) measurements and AFM were used to investigate the changes on the machined surfaces. Preliminary results indicated the potential for advancing surface polishing techniques and localized micro/nano-texturing technology using PECP and PECNP processes.

Ultrahigh Vacuum Scanning Tunneling Microscopy and Spectroscopy of Single-Walled Carbon Nanotubes Interfaced with Silicon Surfaces

NASA Astrophysics Data System (ADS)

Albrecht, Peter; Lyding, Joseph

2008-03-01

The UHV-STM was used to examine SWNTs directly interfaced with hydrogen-passivated Si(100). Dry contact transfer (DCT) [1] enabled the UHV deposition of SWNTs with minimal disruption of the atomically flat Si(100)-2x1:H surface. Isolated, rather than bundled, SWNTs could be routinely located for atomically resolved imaging, tunneling I-V spectroscopy [2], lateral manipulation [3], and proximal substrate modification. Weakly adsorbed SWNTs initially unstable in the presence of the rastered STM tip could be stabilized by depassivating the underlying H-Si(100) surface via UHV-STM electron-stimulated H desorption [4], which in the case of one chiral semiconducting SWNT also promoted the local alignment of the zigzag symmetry direction on the underside of the tube with the clean Si dimer rows [5]. The growing body of first-principles simulations of the SWNT/Si(100) system [6] was drawn upon in our interpretation of such local perturbations. [1] APL 83, 5029 (2003). [2] Nanotechnology 18, 095204 (2007). [3] Small 3, 146 (2007). [4] Nanotechnology 18, 125302 (2007). [5] Small 3, 1402 (2007). [6] JAP 100, 124304 (2006).

Dynamics of Defects and Dopants in Complex Systems: Si and Oxide Surfaces and Interfaces

NASA Astrophysics Data System (ADS)

Kirichenko, Taras; Yu, Decai; Banarjee, Sanjay; Hwang, Gyeong

2004-10-01

Fabrication of forthcoming nanometer scale electronic devices faces many difficulties including formation of extremely shallow and highly doped junctions. At present, ultra-low-energy ion implantation followed by high-temperature thermal annealing is most widely used to fabricate such ultra-shallow junctions. In the process, a great challenge lies in achieving precise control of redistribution and electrical activation of dopant impurities. Native defects (such as vacancies and interstitials) generated during implantation are known to be mainly responsible for the TED and also influence significantly the electrical activation/deactivation. Defect-dopant dynamics is rather well understood in crystalline Si and SiO2. However, little is known about their diffusion and annihilation (or precipitation) at the surfaces and interfaces, despite its growing importance in determining junction profiles as device dimensions get smaller. In this talk, we will present our density functional theory calculation results on the atomic and electronic structure and dynamical behavior of native defects and dopant-defect complexes in disordered/strained Si and oxide systems, such as i) clean and absorbent-modified Si(100) surface and subsurface layers, ii) amorphous-crystalline Si interfaces and iii) amorphous SiO2/Si interfaces. The fundamental understanding and data is essential in developing a comprehensive kinetic model for junction formation, which would contribute greatly in improving current process technologies.

Layered Nano-TiO2 Based Treatments for the Maintenance of Natural Stones in Historical Architecture.

PubMed

Gherardi, Francesca; Goidanich, Sara; Dal Santo, Vladimiro; Toniolo, Lucia

2018-06-18

Layered treatments of natural stones based on dispersions of experimental nano-TiO 2 and commercial TEOS showing photocatalytic and self-cleaning properties were set up and tested. To enhance nano-TiO 2 efficacy, a surface pre-treatment with tetraethyl orthosilicate was proposed to avoid the penetration of NPs into the crystalline porous substrates and to improve their adhesion to the stone. Two treatment applications (wet-on-wet and wet-on-dry) were compared, showing different results. A strong interaction Si-O-Ti was the key factor for the successful treatment, leaving the band gap and relevant properties of nano-TiO 2 unaltered. The layered treatments were tested on a porous calcarenite (Noto stone) and a very compact marble (Carrara marble). The combined SiO 2 -nano-TiO 2 treatments can find application in suitable cases where a surface consolidation is needed, ensuring a depolluting and self-cleaning durable activity. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

BiOBr@SiO2 flower-like nanospheres chemically-bonded on cement-based materials for photocatalysis

NASA Astrophysics Data System (ADS)

Wang, Dan; Hou, Pengkun; Yang, Ping; Cheng, Xin

2018-02-01

Endowment of photocatalytic property on the surface of concrete structure can contribute to the self-cleaning of the structure and purification of the polluted environment. We developed a nano-structured BiOBr@SiO2 photocatalyst and innovatively used for surface-treatment of cement-based materials with the hope of attaining the photocatalytic property in visible-light region and surface modification/densification performances. The SiO2 layer on the flower-like BiOBr@SiO2 helps to maintain a stable distribution of the photocatalyst, as well as achieving a chemical bonding between the coating and the cement matrix. Results showed that the color fading rate of during the degradation of Rhodamine B dye of the BiOBr-cem sample is 2 times higher compared with the commonly studied C, N-TiO2-cem sample. The photo-degradation rates of samples BiOBr-cem and BiOBr@SiO2-cem are 93 and 81% within 150 min, respectively, while sample BiOBr@SiO2-cem reveals a denser and smoother surface after curing for 28 days and pore-filling effect at size within 0.01-0.2 μm when compared with untreated samples. Moreover, additional C-S-H gel can be formed due to the pozzolanic reaction between BiOBr@SiO2 and the hardened cement matrix. Both advantages of the BiOBr@SiO2 favor its application for surface-treatment of hardened cement-based material to acquire an improved surface quality, as well as durable photocatalytic functionality.

The fabrication of visible light responsive Ag-SiO2 co-doped TiO2 thin films by the sol-gel method

NASA Astrophysics Data System (ADS)

Dam Le, Duy; Dung Dang, Thi My; Thang Chau, Vinh; Chien Dang, Mau

2010-03-01

In this study we have successfully deposited Ag-SiO2 co-doped TiO2 thin films on glass substrates by the sol-gel method. After being coated by a dip coating method, the film was transparent, smooth and had strong adhesion on the glass surface. The deposited film was characterized by x-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), ultraviolet-visible spectroscopy (UV-Vis), a scanning electron microscope (SEM) and atomic force microscope (AFM) to investigate its crystallization, transmittance and surface structure. The antifogging ability is explained by the contact angle of water on the surface of the glass substrates under visible-light. The obtained results show that Ag-SiO2 co-doped TiO2 film has potential applications for self cleaning and anti-bacterial ceramic tiles.

Fabrication of surface micro- and nanostructures for superhydrophobic surfaces in electric and electronic applications

NASA Astrophysics Data System (ADS)

Xiu, Yonghao

In our study, the superhydrophobic surface based on biomimetic lotus leave is explored to maintain the desired properties for self-cleaning. Parameters in controlling bead-up and roll-off characteristics of water droplets were investigated on different model surfaces. The governing equations were proposed. Heuristic study is performed. First, the fundamental understanding of the effect of roughness on superhydrophobicity is performed. The effect of hierarchical roughness, i.e., two scale roughness effect on roughness is investigated using systems of (1) monodisperse colloidal silica sphere (submicron) arrays and Au nanoparticle on top and (2) Si micrometer pyramids and Si nanostructures on top from KOH etching and metal assisted etching of Si. The relation between the contact area fraction and water droplet contact angles are derived based on Wenzel and Cassie-Baxter equation for the systems and the two scale effect is explained regarding the synergistic combination of two scales. Previously the microscopic three-phase-contact line is thought to be the key factor in determining contact angles and hystereses. In our study, Laplace pressure was brought up and related to the three-phase-contact line and taken as a key figure of merit in determining superhydrophobicity. In addition, we are one of the first to study the effect of tapered structures (wall inclination). Combining with a second scale roughness on the tapered structures, stable Cassie state for both water and low surface energy oil may be achieved. This is of great significance for designing both superhydrophobicity and superoleophobicity. Regarding the origin of contact angle hysteresis, study of superhydrophobicity on micrometer Si pillars was performed. The relation between the interface work of function and contact angle hysteresis was proposed and derived mathematically based on the Young-Dupre equation. The three-phase-contact line was further related to a secondary scale roughness induced. Based on our understanding of the roughness effect on superhydrophobicity (both contact angle and hysteresis), structured surfaces from polybutadiene, polyurethane, silica, and Si etc. were successfully prepared. For engineering applications of superhydrophobic surfaces, stability issues regarding UV, mechanical robustness and humid environment need to be investigated. Among these factors, UV stability is the first one to be studied. However, most polymer surfaces we prepared failed the purpose. Silica surfaces with excellent UV stability were prepared. This method consists of preparation of rough silica surfaces, thermal treatment and the following surface hydrophobization by fluoroalkyl silane treatment. Fluoroalkyl groups are UV stable and the underlying species are silica which is also UV stable (UV transparent). UV stability on the surface currently is 5,500 h according the standard test method of ASTM D 4329. No degradation on surface superhydrophobicity was observed. New methods for preparing superhydrophobic and transparent silica surfaces were investigated using urea-choline chloride eutectic liquid to generate fine roughness and reduce the cost for preparation of surface structures. Another possible application for self-cleaning in photovoltaic panels was investigated on Si surfaces by construction of the two-scale rough structures followed by fluoroalkyl silane treatment. Metal (Au) assisted etching was employed to fabricate nanostructures on micrometer pyramid surfaces. The light reflection on the prepared surfaces was investigated. After surface texturing using KOH etching for micrometer pyramids and the following nanostructure using metal assisted etching, surface light reflection reduced to a minimum value which shows that this surface texturing technique is highly promising for improving the photovoltaic efficiency while imparting photovoltaics the self-cleaning feature. This surface is also expected to be UV stable due to the same fluoroalkyl silane used. Regarding the mechanical robustness, epoxy-silica superhydrophobic surfaces were prepared by O2 plasma etching to generate enough surface roughness of silica spheres followed by fluoroalkyl silane treatment. A robustness test method was proposed and the test results showed that the surface is among the most robust surfaces for the superhydrophobic surfaces we prepared and currently reported in literature.

In-situ micro bend testing of SiC and the effects of Ga+ ion damage

NASA Astrophysics Data System (ADS)

Robertson, S.; Doak, SS; Zhou, Z.; Wu, H.

2017-09-01

The Young’s modulus of 6H single crystal silicon carbide (SiC) was tested with micro cantilevers that had a range of cross-sectional dimensions with surfaces cleaned under different accelerating voltages of Ga+ beam. A clear size effect is seen with Young’s modulus decreasing as the cross-sectional area reduces. One of the possible reasons for such size effect is the Ga+ induced damage on all surfaces of the cantilever. Transmission electron microscopy (TEM) was used to analyse the degree of damage, and the measurements of damage is compared to predictions by SRIM irradiation simulation.

Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liang, H. L.; Mei, Z. X.; Zhang, Q. H.

2011-05-30

High-quality wurtzite MgZnO film was deposited on Si(111) substrate via a delicate interface engineering using BeO, by which solar-blind ultraviolet photodetectors were fabricated on the n-MgZnO(0001)/p-Si(111) heterojunction. A thin Be layer was deposited on clean Si surface with subsequent in situ oxidation processes, which provides an excellent template for high-Mg-content MgZnO growth. The interface controlling significantly improves the device performance, as the photodetector demonstrates a sharp cutoff wavelength at 280 nm, consistent with the optical band gap of the epilayer. Our experimental results promise potential applications of this technique in integration of solar-blind ultraviolet optoelectronic device with Si microelectronic technologies.

Devitrification and delayed crazing of SiO2 on single-crystal silicon and chemically vapor-deposited silicon nitride

NASA Technical Reports Server (NTRS)

Choi, Doo Jin; Scott, William D.

1987-01-01

The linear growth rate of cristobalite was measured in thin SiO2 films on silicon and chemically vapor-deposited silicon nitride. The presence of trace impurities from alumina furnace tubes greatly increased the crystal growth rate. Under clean conditions, the growth rate was still 1 order-of-magnitude greater than that for internally nucleated crystals in bulk silica. Crystallized films cracked and lifted from the surface after exposure to atmospheric water vapor. The crystallization and subsequent crazing and lifting of protective SiO2 films on silicon nitride should be considered in long-term applications.

Experimental determination of positron-related surface characteristics of 6H-SiC

NASA Astrophysics Data System (ADS)

Nangia, A.; Kim, J. H.; Weiss, A. H.; Brauer, G.

2002-03-01

The positron work function of 6H-SiC was determined to be -2.1±0.1 eV from an analysis of the energy spectrum of positrons reemitted from the surface. The positron reemission yield, highest in the sample inserted into vacuum after atmospheric exposure and cleaning with ethanol, was significantly reduced after sputtering with 3 keV, 125 μA min Ne+ ions. The yield was not recovered even after annealing at 900 °C, presumably due to the stability of sputter induced defects. Sputtering at lower energies caused a smaller decrease in the reemission yield that was largely recovered after annealing at 850 °C. Analysis using electron induced Auger electron spectroscopy and positron-annihilation-induced Auger electron spectroscopy indicated that the surface was Si enriched after sputtering and C enriched after subsequent annealing. Values of positron diffusion length and mobility in the unsputtered material were extracted from the dependence of the reemission yield on the beam energy. The application of SiC as a field-assisted positron moderator is discussed.

Optical properties of silicene, Si/Ag(111), and Si/Ag(110)

NASA Astrophysics Data System (ADS)

Hogan, C.; Pulci, O.; Gori, P.; Bechstedt, F.; Martin, D. S.; Barritt, E. E.; Curcella, A.; Prevot, G.; Borensztein, Y.

2018-05-01

We present a state-of-the-art study of the optical properties of free-standing silicene and of single-layer Si one- and two-dimensional (1D and 2D) nanostructures supported on Ag(110) and Ag(111) substrates. Ab initio simulations of reflectance anisotropy spectroscopy (RAS) and surface differential reflectivity spectroscopy (SDRS) applied to the clean Ag surface and Si/Ag interfaces are compared with new measurements. For Si/Ag(110), we confirm a pentagonal nanoribbon geometry, strongly bonded to the substrate, and rule out competing zigzag chain and silicenelike models. For Si/Ag(111), we reproduce the main experimental features and isolate the optical signal of the epitaxial silicene overlayer. The absorption spectrum of a silicene sheet computed including excitonic and local field effects is found to be quite similar to that calculated within an independent particle approximation and shows strong modifications when adsorbed on a Ag substrate. Important details of the computational approach are examined and the origins of the RAS and SDRS signals are explained in terms of the interface and substrate response functions. Our study does not find any evidence for Si adlayers that retain the properties of freestanding silicene.

Atomic hydrogen cleaning of EUV multilayer optics

NASA Astrophysics Data System (ADS)

Graham, Samuel, Jr.; Steinhaus, Charles A.; Clift, W. Miles; Klebanoff, Leonard E.; Bajt, Sasa

2003-06-01

Recent studies have been conducted to investigate the use of atomic hydrogen as an in-situ contamination removal method for EUV optics. In these experiments, a commercial source was used to produce atomic hydrogen by thermal dissociation of molecular hydrogen using a hot filament. Samples for these experiments consisted of silicon wafers coated with sputtered carbon, Mo/Si optics with EUV-induced carbon, and bare Si-capped and Ru-B4C-capped Mo/Si optics. Samples were exposed to an atomic hydrogen source at a distance of 200 - 500 mm downstream and angles between 0-90° with respect to the source. Carbon removal rates and optic oxidation rates were measured using Auger electron spectroscopy depth profiling. In addition, at-wavelength peak reflectance (13.4 nm) was measured using the EUV reflectometer at the Advanced Light Source. Data from these experiments show carbon removal rates up to 20 Ê/hr for sputtered carbon and 40 Ê/hr for EUV deposited carbon at a distance of 200 mm downstream. The cleaning rate was also observed to be a strong function of distance and angular position. Experiments have also shown that the carbon etch rate can be increased by a factor of 4 by channeling atomic hydrogen through quartz tubes in order to direct the atomic hydrogen to the optic surface. Atomic hydrogen exposures of bare optic samples show a small risk in reflectivity degradation after extended periods. Extended exposures (up to 20 hours) of bare Si-capped Mo/Si optics show a 1.2% loss (absolute) in reflectivity while the Ru-B4C-capped Mo/Si optics show a loss on the order of 0.5%. In order to investigate the source of this reflectivity degradation, optic samples were exposed to atomic deuterium and analyzed using low energy ion scattering direct recoil spectroscopy to determine any reactions of the hydrogen with the multilayer stack. Overall, the results show that the risk of over-etching with atomic hydrogen is much less than previous studies using RF discharge cleaning while providing cleaning rates suitable for EUV lithography operations.

Atomic hydrogen cleaning of EUV multilayer optics

NASA Astrophysics Data System (ADS)

Graham, Samuel, Jr.; Steinhaus, Charles A.; Clift, W. Miles; Klebanoff, Leonard E.; Bajt, Sasa

2003-06-01

Recent studies have been conducted to investigate the use of atomic hydrogen as an in-situ contamination removal method for EUV optics. In these experiments, a commercial source was used to produce atomic hydrogen by thermal dissociation of molecular hydrogen using a hot filament. Samples for these experiments consisted of silicon wafers coated with sputtered carbon, Mo/Si optics with EUV-induced carbon, and bare Si-capped and Ru-B4C-capped Mo/Si optics. Samples were exposed to an atomic hydrogen source at a distance of 200 - 500 mm downstream and angles between 0-90° with respect to the source. Carbon removal rates and optic oxidation rates were measured using Auger electron spectroscopy depth profiling. In addition, at-wavelength peak reflectance (13.4 nm) was measured using the EUV reflectometer at the Advanced Light Source. Data from these experiments show carbon removal rates up to 20 Å/hr for sputtered carbon and 40 Å/hr for EUV deposited carbon at a distance of 200 mm downstream. The cleaning rate was also observed to be a strong function of distance and angular position. Experiments have also shown that the carbon etch rate can be increased by a factor of 4 by channeling atomic hydrogen through quartz tubes in order to direct the atomic hydrogen to the optic surface. Atomic hydrogen exposures of bare optic samples show a small risk in reflectivity degradation after extended periods. Extended exposures (up to 20 hours) of bare Si-capped Mo/Si optics show a 1.2% loss (absolute) in reflectivity while the Ru-B4C-capped Mo/Si optics show a loss on the order of 0.5%. In order to investigate the source of this reflectivity degradation, optic samples were exposed to atomic deuterium and analyzed using low energy ion scattering direct recoil spectroscopy to determine any reactions of the hydrogen with the multilayer stack. Overall, the results show that the risk of over-etching with atomic hydrogen is much less than previous studies using RF discharge cleaning while providing cleaning rates suitable for EUV lithography operations.

Strip Coating Metrology on Large Scale Telescope Optics: Scalable Cost Saving Preventative Maintenance with First Contact Polymer

NASA Astrophysics Data System (ADS)

Hamilton, J.

2012-09-01

Protection and cleaning of precision optical surfaces on large scale astronomical instruments has entered a new era. First surface mirrors have been restored to "like-new" condition avoiding the expense and downtime of recoating. Nearly 10 years of testing and evaluation at a variety of sites including optics at Vandenberg Air Force Base, the Canada France Hawaii Telescope (CFHT) and the W.M Keck Telescope on Mauna Kea, have yielded impressive results: restored reflectivity, no residue, insitu cleaning and better coating performance when used as a precleaner when coating. Metrology and research in our labs has resulted in these novel, commercially available polymeric stripcoatings that are applied as a liquid and subsequently peeled off the substrate as a solid film. These designer polymer solutions safely clean and protect a wide variety of nanostructured surfaces and leave the surface almost atomically clean. Contaminant removal was monitored by a variety of techniques including Reflectivity, Nomarski, Atomic Force and Scanning Electron Microscopy as well as XPS. In addition, data demonstrates that the material safely removes particulate contamination and finger oils from nanostructures such as the 300nm wide lines on diffraction gratings and similar submicron features on Si wafers. High power laser damage testing found no residue on the optical surfaces following dried film removal and YAG laser damage thresholds after cleaning on coated BK7 of 15J/cm2 at 20ns and 20Hz were unchanged. Additionally to these adhesion tunable polymer systems, nanotube and graphene doped, ESD free polymer strip coatings for surface protection, nanoreplication, cleaning and dust mitigation have also been developed. Our coatings have been successfully used on diverse surfaces like high power laser optics, the Hope Diamond in Washington DC, CCD s for the 520 megapixel Dark Energy Survey Camera being built at Fermilab and lithographically fabbed detector surfaces for the Cryogenic Dark Matter Search.

Robust Fluorine-Free Superhydrophobic Amino-Silicone Oil/SiO2 Modification of Electrospun Polyacrylonitrile Membranes for Waterproof-Breathable Application.

PubMed

Sheng, Junlu; Xu, Yue; Yu, Jianyong; Ding, Bin

2017-05-03

Superhydrophobic waterproof-breathable membranes have attracted considerable interest owing to their multifunctional applications in self-cleaning, anti-icing, anticorrosion, outdoor tents, and protective clothing. Despite the researches pertaning to the construction of superhydrophobic functional membranes by nanoparticle finishing have increased drastically, the disconnected particle component is easy to fall off from the membranes under deformation and wear conditions, which has restricted their wide use in practice. Here, robust superhydrophobic microporous membranes were prepared via a facile and environmentally friendly strategy by dip-coating amino-silicone oil (ASO) onto the electrospun polyacrylonitrile (PAN) membranes, followed by SiO 2 nanoparticles (SiO 2 NPs) blade coating. Compared with hydrophilic PAN membranes, the modified membranes exhibited superhydrophobic surface with an advancing water contact angle up to 156°, after introducing ASO as low surface energy substance and SiO 2 NPs as filler to reduce the pore size and construct the multihierarchical rough structure. Varying the concentrations of ASO and SiO 2 NPs systematically, the PAN electrospun membranes modified with 1 wt % ASO and 0.1 wt % SiO 2 NPs were endowed with good water-resistance (74.3 kPa), relative low thermal conductivity (0.0028 W m -1 K -1 ), modest vapor permeability (11.4 kg m -2 d -1 ), and air permeability (20.5 mm s -1 ). Besides, the inorganic-organic hybrid coating of ASO/SiO 2 NPs could maintain its superhydrophobicity even after 40 abrasion cycles. The resulting membranes were found to resist variations on the pH scale from 0 to 12, and retained their water repellent properties when exposed to harsh acidic and alkali conditions. This facile fabrication of durable fluorine-free superhydrophobic membranes simultaneous with good waterproof-breathable performance provides the advantages for potential applications in self-cleaning materials and versatile protective clothing.

Influence of contamination on bonding to zirconia ceramic.

PubMed

Yang, Bin; Scharnberg, Michael; Wolfart, Stefan; Quaas, Anne C; Ludwig, Klaus; Adelung, Rainer; Kern, Matthias

2007-05-01

The purpose of this study was to investigate the influences of contaminations and cleaning methods on bonding to dental zirconia ceramic. After saliva immersion and using silicone disclosing agent, airborne-particle abraded ceramic specimens were cleaned with isopropanol (AL), acetone (AC), 37% phosphoric acid (PA), additional airborne-particle abrasion (AA), or only with water rinsing (SS). Airborne-particle abraded specimens without contaminations (CL) were used as control group. For chemical analysis specimens of all groups were examined with X-ray photoelectron spectroscopy (XPS). Plexiglas tubes filled with composite resin were bonded to ceramic specimens using a phosphate-monomer containing composite luting resin. After 3-day water storage, tensile bond strengths (TBS) were tested. XPS analysis of group SS showed the presence of saliva and silicone (Si) contamination on the surface. The ratios of carbon/zirconium and oxygen/zirconium for groups PA and AA were comparable to those ratios obtained for group CL, indicating the removal of the organic saliva contamination. Airborne-particle abrasion and acetone completely removed Si contamination from ceramic surfaces. Isopropanol had little cleaning effect on the two contaminants. TBS (median +/- standard deviation) in MPa of the groups SS (11.6 +/- 3.1), AL (10.0 +/- 2.9), and AC (13.0 +/- 2.8) were statistically lower than those of groups PA (33.6 +/- 5.5), AA (40.1 +/- 3.6), and CL (47.0 +/- 8.1) (p < 0.001), while no differences were found in TBS between groups AA and CL (p > 0.5). Contamination significantly reduced bond strengths to zirconia ceramic. Airborne-particle abrasion was the most effective cleaning method.

Optimization of the Automated Spray Layer-by-Layer Technique for Thin Film Deposition

DTIC Science & Technology

2010-06-01

pieces. All silicon was cleaned with ethanol and Milli-Q water to hydroxylate the surface. Quartz Crystal Microbalance Si02 coated sensors (Q-sense...was deposited onto a SiO2 coated QCM crystal using the automated dipping process described earlier. Once the film was deposited, it was dried over...night, and then placed in the QCM -D device. An additional layer of PAH was deposited onto the crystal in the QCM -D chamber at a flow rate of 1pL/minute

Chalcogenide-based van der Waals epitaxy: Interface conductivity of tellurium on Si(111)

NASA Astrophysics Data System (ADS)

Lüpke, Felix; Just, Sven; Bihlmayer, Gustav; Lanius, Martin; Luysberg, Martina; Doležal, Jiří; Neumann, Elmar; Cherepanov, Vasily; Ošt'ádal, Ivan; Mussler, Gregor; Grützmacher, Detlev; Voigtländer, Bert

2017-07-01

We present a combined experimental and theoretical analysis of a Te rich interface layer which represents a template for chalcogenide-based van der Waals epitaxy on Si(111). On a clean Si(111)-(1 ×1 ) surface, we find Te to form a Te/Si(111)-(1 ×1 ) reconstruction to saturate the substrate bonds. A problem arising is that such an interface layer can potentially be highly conductive, undermining the applicability of the on-top grown films in electric devices. We perform here a detailed structural analysis of the pristine Te termination and present direct measurements of its electrical conductivity by in situ distance-dependent four-probe measurements. The experimental results are analyzed with respect to density functional theory calculations and the implications of the interface termination with respect to the electrical conductivity of chalcogenide-based topological insulator thin films are discussed. In detail, we find a Te/Si(111)-(1 ×1 ) interface conductivity of σ2D Te=2.6 (5 ) ×10-7S /□ , which is small compared to the typical conductivity of topological surface states.

Growth behavior and properties of atomic layer deposited tin oxide on silicon from novel tin(II)acetylacetonate precursor and ozone

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kannan Selvaraj, Sathees; Feinerman, Alan; Takoudis, Christos G., E-mail: takoudis@uic.edu

In this work, a novel liquid tin(II) precursor, tin(II)acetylacetonate [Sn(acac){sub 2}], was used to deposit tin oxide films on Si(100) substrate, using a custom-built hot wall atomic layer deposition (ALD) reactor. Three different oxidizers, water, oxygen, and ozone, were tried. Resulting growth rates were studied as a function of precursor dosage, oxidizer dosage, reactor temperature, and number of ALD cycles. The film growth rate was found to be 0.1 ± 0.01 nm/cycle within the wide ALD temperature window of 175–300 °C using ozone; no film growth was observed with water or oxygen. Characterization methods were used to study the composition, interface quality, crystallinity, microstructure,more » refractive index, surface morphology, and resistivity of the resulting films. X-ray photoelectron spectra showed the formation of a clean SnO{sub x}–Si interface. The resistivity of the SnO{sub x} films was calculated to be 0.3 Ω cm. Results of this work demonstrate the possibility of introducing Sn(acac){sub 2} as tin precursor to deposit conducting ALD SnO{sub x} thin films on a silicon surface, with clean interface and no formation of undesired SiO{sub 2} or other interfacial reaction products, for transparent conducting oxide applications.« less

Low energy positrons as probes of reconstructed semiconductor surfaces.

NASA Astrophysics Data System (ADS)

Fazleev, Nail G.; Weiss, Alex H.

2007-03-01

Positron probes of semiconductor surfaces that play a fundamental role in modern science and technology are capable to non-destructively provide information that is both unique to the probe and complimentary to that extracted using other more standard techniques. We discuss recent progress in studies of the reconstructed Si(100), Si(111), Ge(100), and Ge(111) surfaces, clean and exposed to hydrogen and oxygen, using a surface characterization technique, Positron-Annihilation-Induced Auger-Electron Spectroscopy (PAES). Experimental PAES results are analyzed by performing first-principles calculations of positron surface states and annihilation probabilities of surface-trapped positrons with relevant core electrons for the reconstructed surfaces, taking into account discrete lattice effects, the electronic reorganization due to bonding, and charge redistribution effects at the surface. Effects of the hydrogen and oxygen adsorption on semiconductor surfaces on localization of positron surface state wave functions and annihilation characteristics are also analyzed. Theoretical calculations confirm that PAES intensities, which are proportional to annihilation probabilities of the surface trapped positrons that results in a core hole, are sensitive to the crystal face, surface structure and elemental content of the semiconductors.

Optical second harmonic spectroscopy of silicon-adsorbate surfaces and silicon nanocrystals

NASA Astrophysics Data System (ADS)

Downer, Michael

2002-03-01

Second harmonic generation (SHG) provides a surface-specific, noninvasive probe of adsorbates. However, microscopic first-principles theory of adsorbate-specific spectroscopic SHG responses has proven elusive. Here we present experimental SHG spectra for six well-characterized, technologically important Si(001) surfaces in ultrahigh vacuum (UHV): clean Si(001)-2x1 and Si(001) terminated with hydrogen (H), [1] germanium (Ge), Ge and H, [2] boron (B) and B and H. [3] Each adsorbate (combination) alters SHG uniquely. Our microscopic theories based on ab initio pseudopotential or semi-empirical tight-binding (SETB) methods then explain observed trends, and predict new features in unexplored spectral regions. [3,4] Charge transfer among surface bonds is found to govern SHG spectroscopy of surface-adsorbate systems strongly. New results on SHG from Si nanocrystals embedded in SiO2 will also be presented. [5] SHG is sensitive to Si/SiO2 interface states, electrostatic charge on the nanocrystals, and macroscopic particle density gradients. Finally, a new frequency-domain interferometric second-harmonic (FDISH) spectroscopic technique to measure simultaneously the intensity and phase of SH radiation over a broad spectral range without laser tuning will be described. [6] 1. J. Dadap et al., Phys. Rev. B 56, 13367 (1997). 2. P. Parkinson et al., Appl. Phys. B 68, 641 (1999). 3. D. Lim et al., Phys. Rev. Lett. 84, 3406 (2000); Appl. Phys. Lett. 77, 181 (2000). 4. V. Gavrilenko et al., Phys. Rev. B 63, 1653 (2001); M. C. Downer et al., Surf. Interface Anal. 31, 966 (2001); M. C. Downer et al., phys. stat. sol. (a), in press (2001). 5. Y. Jiang et al., Appl. Phys. Lett. 78, 766 (2001). 6. P. T. Wilson et al., Opt. Lett. 24, 496 (1999).

Early stages of epitaxial CoSi 2 formation on Si(111) surface as investigated by ARUPS, XPS, LEED and work function variation

NASA Astrophysics Data System (ADS)

Pirri, C.; Peruchetti, J. C.; Gewinner, G.; Derrien, J.

1985-04-01

We performed the CoSi 2 formation on a clean (7 × 7) Si(111) surface under UHV conditions. The used techniques were angle resolved UV photoemission, X-ray photoemission, work function change and low energy electron diffraction in order to study the electronic and structural properties of the interface during its formation. At room temperature, a small amount of Co reacts strongly with Si to form an interfacial and very thin cobalt suicide. The ultraviolet photoelectron spectrum displays already two features corresponding respectively to the Co 3d and Si 3p electron bonding states and the Co 3d non-bonding states. With increasing coverage ( θ ≳ 4 ML) it seems that the interfacial suicide prevents further Co-Si interdiffusion to achieve the suicide reaction and a metal rich film is found. At high temperature (˜ 600°C) and in the first monolayer range, several superstructures are found (√7 × √7, and 2 × 2). They are induced by a Co-Si bidimensional compound where the Co atoms are not yet completely surrounded by Si atoms as in their bulk CoSi 2 structure. With increasing coverage, a CoSi 2-like photoemission spectrum is observed reflecting the formation of the disilicide. The LEED pattern testifies an epitaxial growth displaying a (1 × 1) CoSi 2 diagram. The work function change technique also reflects faithfully this growth.

Impact of Cosmetics on the Surface Properties of Silicone Hydrogel Contact Lenses.

PubMed

Srinivasan, Sruthi; Otchere, Heinz; Yu, Mili; Yang, Jeffery; Luensmann, Doerte; Jones, Lyndon

2015-07-01

This study evaluated the impact of various cosmetics on the surface properties of silicone hydrogel (SiHy) contact lens materials. In this in vitro experiment, 7 SiHy contact lens materials were coated with 1 of 9 cosmetics, including common hand creams (3), eye makeup removers (3), and mascaras (3). Dark-field microscopy images were taken to determine pixel brightness (PB) after cosmetic exposure, which describes the visible surface deposition (n=6 for each lens type), with a higher PB indicating increased deposition. The sessile drop technique was used to determine the advancing contact angle (CA). Measurements were repeated for both methods after a single peroxide-based cleaning cycle. Pixel brightness was significantly higher for mascara-coated lenses compared with the other cosmetic products (P<0.01). The peroxide-based lens care solution removed most deposits from the nonwaterproof mascara for 4 lens types, whereas deposits remained relatively unchanged for 1 waterproof mascara (P>0.05). Hand creams and makeup remover had minimal impact on PB. Changes in CA measurements after cosmetic application were highly lens dependent. Hand creams caused primarily a decrease in CA for 5 of the 7 lens types, whereas 1 of the waterproof mascaras caused a significant increase of 30 to 50° for 3 lens types. Some mascara-lens combinations resulted in increased CA and PB, which could have an impact on in vivo lens performance. Nonwaterproof mascara was mostly removed after a cleaning cycle. Further research is needed to understand the clinical implications for SiHy lens wearers using cosmetics.

Low-energy electron diffraction study of Si(111)-(√3x √3)R30∘ -B

NASA Astrophysics Data System (ADS)

Marino, K. E.; Huang, Y. T.; Diehl, R. D.; Tu, Weison; Mulugeta, Daniel; Snijders, P. C.; Weitering, H. H.

2014-03-01

Metal-semiconductor interfaces are important for the function and manufacture of advanced electronics, such as those used in computers, tablets and phones. They also exhibit many interesting physical phenomena that are interesting from a fundamental point of view, including exotic phases and phase transitions. This study involves the analysis and modeling of the surface structure of a thin film of boron on the Si(111) surface. The addition of metal atoms to the surface of Si(111) simplifies its structure by removing a ``rippling'' that is present on the clean surface. The low-energy electron diffraction (LEED) data were measured at a surface temperature of 80 K at ORNL. The LEED analysis utilized the SATLEED analysis programs. The results are similar to those obtained in an earlier LEED study for this interface, but the precision is higher due to the larger dataset employed., The results of this study will be compared to other studies of this and similar systems. We acknowledge the Eberly College of Science for funding this project. González, Guo, Ortega, Flores, Weitering. Phys. Rev. Lett. 102, 115501 (2009)

Fabrication of a superhydrophobic coating with high adhesive effect to substrates and tunable wettability

NASA Astrophysics Data System (ADS)

Li, Yuan; Zhang, Zhaozhu; Zhu, Xiaotao; Men, Xuehu; Ge, Bo; Zhou, Xiaoyan

2015-02-01

In this paper, a new superhydrophobic coating was successfully prefabricated by a facile sol-gel process which was made up of first the surface chemical reaction of (3-Glycidyloxypropyl) trimethoxysilane (A-187) and SiO2 particles and subsequent spray-coating onto the substrate. Further hardening treatment and surface fluorination allowed the SiO2 coating with the optimum mass ratio of 2.0:1 to exhibit nice superhydrophobic property and high adhesive effect to substrates. Our researches indicated that the mass ratio of A-187 and SiO2 particles could significantly control the surface morphology (or the wettability) and affect adhesion force of the superhydrophobic coating to substrates. In the process, hardening temperature was quite important for rapid evaporation of the solvent and then fast hardening of the coating despite the absence of the similar effect to the mass ratio of A-187 and SiO2 particles on the superhydrophobic coating, and moreover, a higher hardening temperature could also highly improve transparency of the superhydrophobic coating. These findings suggest that the superhydrophobic coating should have promising commercial applications as a self-cleaning product.

Chemical and electrical passivation of Si(1 1 1) surfaces

NASA Astrophysics Data System (ADS)

Tian, Fangyuan; Yang, Dan; Opila, Robert L.; Teplyakov, Andrew V.

2012-01-01

This paper compares the physical and chemical properties of hydrogen-passivated Si(1 1 1) single crystalline surfaces prepared by two main chemical preparation procedures. The modified RCA cleaning is commonly used to prepare atomically flat stable surfaces that are easily identifiable spectroscopically and are the standard for chemical functionalization of silicon. On the other hand electronic properties of these surfaces are sometimes difficult to control. A much simpler silicon surface preparation procedure includes HF dipping for a short period of time. This procedure yields an atomically rough surface, whose chemical identity is not well-defined. However, the surfaces prepared by this approach often exhibit exceptionally attractive electronic properties as determined by long charge carrier lifetimes. This work utilizes infrared spectroscopy and X-ray photoelectron spectroscopy to investigate chemical modification of the surfaces prepared by these two different procedures with PCl5 (leading to surface chlorination) and with short- and long-alkyl-chain alkenes (1-decene and 1-octodecene, respectively) and follows the electronic properties of the starting surfaces produced by measuring charge-carrier lifetimes.

Lateral Charge Transport in Silicon Nanomembranes

NASA Astrophysics Data System (ADS)

Hu, Weiwei

Silicon nanomembranes, also called SiNMs, Si thin sheets or films, are a great platform to study surface sciences, since the bulk is diminished and the surface-to-volume ratio is large. In a single crystalline material, atoms on the surface experience different forces, electric fields, thermodynamic surroundings, etc., than those within the bulk. Therefore, unique structural, mechanical, electronic, optical, and many other properties associated with surfaces overweigh bulk effects; novel phenomena emerge. In particular, electronic features of Si are of significance due to the extensive use of Si in integrated circuit devices and biochemical sensor technologies. As a result, especially with the size of transistors quickly decreasing nowadays, the exploration of electronic characteristics of Si surfaces become much more significant. This is also interesting as a topic within the area of fundamental surface science. Silicon-on-insulator (SOI) provides a new structure for studying charge transport in the SiNM, which is monocrystalline and sits on top of the SOI wafer. I use SOI based SiNMs with two surface orientations: Si (001) and Si (111). The former is pervasive in industrial applications while the latter has interesting metallic surface states when 7x7 reconstruction occurs on a clean surface. My goal is to measure/infer the sheet conductance in the true surface layer with different surface situations, and to further investigate the surface band structure and how carriers distribute and move accordingly. The biggest challenge is to eliminate interferences, e.g., bulk effects. The following are two solutions. 1) The thickness of the used SiNMs spans 40 nm to 500 nm, with a nominal doping level of 1015 cm -3 in our experiment. A straightforward calculation of areal dopant density indicates that charge carriers from the extrinsic doping are 1˜2 orders of magnitude fewer than the trap states at the interface between the buried oxide in SOI and the top SiNM, meaning that moderate doping is irrelevant and the SiNM acts like an intrinsic one. 2) The back gate that is applied to the measured sample is an innovative design among myriad analogous studies. It enables the tuning of the Fermi level (EF) throughout the SiNMs and makes it possible for a membrane to reach its most depleted status, thus efficiently removing the bulk conduction path. The four-probe van der Pauw measurements of film conductance are taken inside an ultrahigh vacuum chamber, where the surface condition remains stable and controllable. On Si (111) 7x7 surfaces, we find from the independence of conductance on membrane thickness that we are measuring the surface transport only. The sheet conductance is high, as it is on the microS/□scale, which supports the 7x7 surface having metallicity in lateral charge transport, a point which has been debated extensively. Nevertheless, weak semiconductor behavior is still present. For hydrogenated Si (001), which is obtained after hydrogen fluoric acid (HF) treatment, surface Fermi level is found around mid-bandgap based on temperature dependent measurements. No surface Fermi level pinning to closely below the conduction band minimum exists in my HF treated Si (001) NMs.

Production of stable superhydrophilic surfaces on 316L steel by simultaneous laser texturing and SiO2 deposition

NASA Astrophysics Data System (ADS)

Rajab, Fatema H.; Liu, Zhu; Li, Lin

2018-01-01

Superhydrophilic surfaces with liquid contact angles of less than 5 ° have attracted much interest in practical applications including self-cleaning, cell manipulation, adhesion enhancement, anti-fogging, fluid flow control and evaporative cooling. Standard laser metal texturing method often result in unstable wetting characteristics, i.e. changing from super hydrophilic to hydrophobic in a few days or weeks. In this paper, a simple one step method is reported for fabricating a stable superhydrophilic metallic surface that lasted for at least 6 months. Here, 316L stainless steel substrates were textured using a nanosecond laser with in-situ SiO2 deposition. Morphology and chemistry of laser-textured surfaces were characterised using SEM, XRD, XPS and an optical 3D profiler. Static wettability analysis was carried out over a period of 6 months after the laser treatment. The effect of surface roughness on wettability was also studied. Results showed that the wettability of the textured surfaces could be controlled by changing the scanning speed of laser beam and number of passes. The main reason for the realisation of the stable superhydrophilic surface is the combination of the melted glass particles mainly Si and O with that of stainless steel in the micro-textured patterns. This study presents a useful method

Low Temperature Deposition of PECVD Polycrystalline Silicon Thin Films using SiF4 / SiH4 mixture

NASA Astrophysics Data System (ADS)

Syed, Moniruzzaman; Inokuma, Takao; Kurata, Yoshihiro; Hasegawa, Seiichi

2016-03-01

Polycrystalline silicon films with a strong (110) texture were prepared at 400°C by a plasma-enhanced chemical vapor deposition using different SiF4 flow rates ([SiF4] = 0-0.5 sccm) under a fixed SiH4 flow rate ([SiH4] = 1 or 0.15 sccm). The effects of the addition of SiF4 to SiH4 on the structural properties of the films were studied by Raman scattering, X-ray diffraction (XRD), Atomic force microscopy and stress measurements. For [SiH4] = 1 sccm, the crystallinity and the (110) XRD grain size monotonically increased with increasing [SiF4] and their respective maxima reach 90% and 900 Å. However, for [SiH4] = 0.15 sccm, both the crystallinity and the grain size decreased with [SiF4]. Mechanisms causing the change in crystallinity are discussed, and it was suggested that an improvement in the crystallinity, due to the addition of SiF4, is likely to be caused by the effect of a change in the surface morphology of the substrates along with the effect of in situ chemical cleaning.

Spectroscopic Monitoring of the Laser Cleaning Applied to Ancient Marbles from Mediterranean Areas

NASA Astrophysics Data System (ADS)

Lazic, V.; Colao, F.; Fantoni, R.; Fiorani, L.; Palucci, A.; Striber, J.; Santagata, A.; Morone, A.; Spizzicchino, V.

Laser Induced Breakdown Spectroscopy (LIBS) analysis by Nd:YAG laser emitting at 355nm were performed on different clean and dirty surfaces of marble fragments collected from ancient quarries in Greece, Turkey and Italy, in order to determine semi-quantitavely the atomic composition of the bulk material and encrustation. The method here developed for element concentrations retrieval could be applied during laser cleaning process to supply the information about the effective crust composition at different depths and the point where the process should be interrupted. The knowledge of the crust composition along successive layers is also important for determining the restoration procedures. The elements measured in the encrustations, such as Si, Al, Ca, C, Ti, Mn, Mg, Na, Ba, Sr and Cu are also present in the bulk, but at different concentrations whose determination allows for the process monitoring. The only element here observed in the crusts and not detected in the bulk materials is Chromium, whose progressive disappearance from LIBS spectra could be used as another indicator of the laser cleaning effectiveness. On a sample from Turkey also Vanadium was detected in the encrustation. The present LIBS measuring method was validated by SEM-EDX and ICP analyses. The clean marble surface and encrustations were further analysed by Laser Induced Fluorescence (LIF), which could be used as an alternative technique for the on-line control of the cleaning effectiveness. Better discrimination between dirty and clean marble surface was obtained when 266nm excitation was applied instead of 355 nm. Characteristic LIF spectral signatures allows for the discrimination between different type of the natural stones, even under the water.

Understanding Electrically Active Interface Formation on Wide Bandgap Semiconductors through Molecular Beam Epitaxy Using Fe3O 4 for Spintronics as a Base Case

NASA Astrophysics Data System (ADS)

Hamedani Golshan, Negar

Nanoelectronics, complex heterostructures, and engineered 3D matrix materials are quickly advancing from research possibilities to manufacturing challenges for applications ranging from high-power devices to solar cells to any number of novel multifunctional sensors and controllers. Formation of an abrupt and effective interface is one of the basic requirements for integration of functional materials on different types of semiconductors (from silicon to the wide bandgaps) which can significantly impact the functionality of nanoscale electronic devices. To realize the potential of next-generation electronics, the understanding and control of those initial stages of film layer formation must be understood and translated to a process that can control the initial stages of film deposition. Thin film Fe3O4 has attracted much attention as a material for exploring the potential of spintronics in next-generation information technologies. Synthesis of highly spin-polarized material as spin sources, in combination with wide bandgap semiconductors which have a long spin relaxation time in addition to functionality in high-temperature, high-power, and high-frequency environments, would enhance the performance of today's spintronic devices. Spinel ferrite Fe3O4 has a high Curie temperature of 858 K and it is predicted to possess half-metallic properties, i.e. 100% spin polarization at the Fermi level, which can lead to ultrahigh tunneling magnetoresistance at room temperature. However, these properties have been very difficult to realize in thin film form, and device design strategies require high-quality thin films of Fe3O4. The most common reason reported in literature for the failure of the films to achieve theoretical performance is that the growth techniques used today produce films with antiphase boundaries (APB). These APBs have a strong antiferromagnetic coupling that negatively impact the magnetic and transport properties of epitaxial Fe 3O4 films. Therefore, greater understanding of how to reduce APB density is of essential importance for applications of Fe3O4 films, and understanding the complex chemical and structural influences on the initial stages of film deposition is the key to eliminating APB density. This work used molecular beam epitaxy (MBE) to further understand the nucleation and growth mechanism needed to ensure single crystal film formation in a controlled orientation directly on a semiconductor (SiC) and then also on an insulating layer (MgO) that can not only align crystal structure but also provide an effective spin-aligned tunnel junction material. The starting substrate surface proved critical to effective integration, and the role of atomic hydrogen seems to be key in controlling the starting surface. We have investigated 1) the hydrogen furnace cleaning at 1600 °C of 6H-SiC (0001) substrates surfaces to produce a smooth, uniformly stepped surface and a √3x√3 R30° surface reconstruction with less than 10 at% residual oxygen contamination, 2) the atomic hydrogen cleaning of 6H-SiC (0001) substrates to produce a (1x1) surface structure with less than 7 at% residual oxygen contamination at relatively low temperature of 700 °C, 3) the atomic hydrogen cleaning of Ge (100) to produce smooth surface (RMS < 0.5 nm over a 1 mum2 area), and 4) the oxygen plasma cleaning of MgO (111) substrates. Each of these starting surfaces, in addition to single crystalline MgO (111) films deposited on SiC (0001) by MBE, produced different initial growth mechanisms for MgO and Fe3 O4. The highest quality single crystalline, epitaxial Fe 3O4 (111) films were deposited by MBE on the √3x√3 R30 surface reconstruction with less than 10 at% residual oxygen contamination 6H-SiC. The Fe3O4 film exhibits high structural order with sharp interfaces and an easy axis in-plane magnetization with a coercivity of 200 Oe. The MgO deposited by MBE on SiC prepared by the hydrogen furnace was found to have two-dimensional features that transitioned from 2D to 3D when the thickness exceeded 2nm; the structure changed from hexagonal

Electrodeposition of r-GO/SiC nano-composites on Magnesium and its Corrosion Behavior in Aqueous Electrolyte

NASA Astrophysics Data System (ADS)

Kavimani, V.; K, Soorya Prakash; R, Rajesh; Rammasamy, Devaraj; Selvaraj, Nivas Babu; Yang, Tao; Prabakaran, Balasubramanian; Jothi, Sathiskumar

2017-12-01

In this paper a detailed investigation for corrosion behavior of magnesium substrate electrodeposited differently by nanoparticles like Reduced Graphene Oxide (r-GO synthesized through Modified Hummer's Method), Silicon Carbide (SiCsbnd mechanically alloyed) and also r-GO/SiC nanocomposites (dispersed through ultrasonication process) as coating materials for varying time period was done. Synthesized nanocomposite was characterized through various physio-chemical techniques and confirmation of the same was carried out. Surface morphology of the developed set of specimens was scrutinized through SEM and EDAX which establishes a clean surface coating with minimal defects attainment through electro deposition technique. Electrochemical corrosion behavior for the magnesium substrates coated with r-GO, SiC, r-GO/SiC for 5 and 10 min coating time period was conceded over in 0.1 M of NaCl and Na2SO4 aqueous solution using Tafel polarization and then compared with a pure magnesium substrate. r-GO/SiC nanocomposite coated magnesium substrate showcased a drastic breakthrough in corrosion resistance when compared with other set of specimens in aqueous medium. Delamination behavior for the same set of specimens was carried and the r-GO/SiC nanocomposite coated magnesium exposed a minimum delamination area accounting to the hydrophobic property of graphene and the binding effect of SiC nano particles.

Scanning tunneling microscopy study of low temperature silicon epitaxy on hydrogen/silicon(001) and phosphine adsorption on silicon(111)-7x7

NASA Astrophysics Data System (ADS)

Ji, Jeong-Young

A three-chamber ultra-high-vacuum (UHV) system with preparation, scanning tunneling microscopy (STM), and chemical vapor deposition (CVD) chambers was designed and built. Here, one can perform surface preparation, STM e-beam lithography, precursor gas dosing, ion sputtering, silicon epitaxy, and various measurements such as reflection high energy electron diffraction (RHEED), low energy electron diffraction (LEED), and Auger electron spectroscopy (AES). Processes performed in the ultra-clean preparation and gas-filled CVD chambers can be monitored by transferring the samples back to the STM chamber to take topographical images. Si deposition on H-terminated Si(001)-2x1 surfaces at temperatures 300--530 K was studied by scanning tunneling microscopy. Hydrogen apparently hinders Si adatom diffusion and enhances surface roughening. Post-growth annealing transfers the top layer atoms downward to fill in vacancies in the lower layer, restoring the crystallinity of the thin film. Hydrogen is shown to remain on the growth front up to at least 10 ML. Si deposition onto the H/Si(001)-3x1 surface at 530 K suggests that dihydride units further suppress Si adatom diffusion and increase surface roughness. PH3 adsorption on Si(111)-7x7 was studied for various exposures between 0.3--60 L at room temperature by means of the scanning-tunneling-microscopy (STM). PH3-, PH2-, H-reacted, and unreacted adatoms can be identified by analyzing STM images at different sample biases. Most of PH3 adsorbs dissociatively on the surface at initial exposure, generating H and PH2 adsorption sites, followed by molecular adsorption of PH3. Rest atoms are more reactive than the adatoms and PH 2-reacted rest atom sites are also observed in STM images. Statistical analysis shows that center adatoms are more reactive than corner adatoms and the saturation P coverage is ˜0.22 ML. Finally, 900 K annealing of a PH 3 dosed surface results in a disordered, partially P-covered surface and PH3 dosing at 900 K forms the same surface reconstruction as a P2-adsorbed surface at similar temperature.

Atomic structures of B20 FeGe thin films grown on the Si(111) surface

NASA Astrophysics Data System (ADS)

Kim, Wondong; Noh, Seungkyun; Yoon, Jisoo; Kim, Young Heon; Lee, Inho; Kim, Jae-Sung; Hwang, Chanyong

We investigated the growth and atomic structures of FeGe thin films on the Si (111) surface by using scanning tunneling microscopy (STM) and transmission electron microscopy (TEM). The 2 5nm- thick FeGe thin films were prepared on the clean Si(111) 7x7 surface by co-deposition of Fe and Ge from separated electron-beam evaporators. With direct deposition on the substrate at the temperature above 550 K, the surface of FeGe films was not smooth and consisted of coarse grains. By the combination of room-temperature annealing and post-annealing process around 800 K, the structure of FeGe thin films evolved into the well crystalized structures. Atom-resolved STM images revealed that there are at least four different surface terminations. We constructed atomic models for each surface terminations based on the bulk atomic arrangement of a B20 chiral structure and confirmed that the observed STM images are successfully reproduced by using computational simulations employing Vienna Ab Initio Simulation package (VASP) with a B20 chiral structure model. TEM cross-sectional images also support our atomic models by revealing clearly the characteristic zigzag features of B20 structures of FeGe(111) thin films.

Doping of magnetite nanoparticles facilitates clean harvesting of diatom oil as biofuel for sustainable energy

NASA Astrophysics Data System (ADS)

Kumar, Vikas; Singh, Ramesh; Thakur, Shipra; Ballabh Joshi, Khashti; Vinayak, Vandana

2018-04-01

Photosynthetic unicellular brown algae diatoms are considered as photobioreactors (PBRs) that synthesize and store oil in the form of lipid droplets and the much of the crude oil we use comes from fossil diatoms. The clean extraction of this crude oil from diatoms is difficult task. The construction of green chemical protocols for the clean separation of diatom oil from cells without killing or to harm the diatom cells is still in its primitive stage. In this report we would like to propose that facile doping of magnetite on diatoms can be used for clean oil separation in PBRs. We doped magnetite nanoparticles onto the surface of diatom Diadesmis confervaceae a diatom which oozes oil naturally. Doping magnetite onto diatoms can also facilitate easy separation of oil when cells are kept in an electromagnetic field. The cell wall of diatom besides having SiOH group has 281 amino acids of which 187–188 amino acids are conserved and are known for metal binding sites. The magnetite nanoparticles bind to the SiOH groups and metal binding sites of amino acids. The presence of appropriate amine functionalized linkers forming peptide aminosilane shells can further facilitate the binding of peptide/polypeptides which can be used in drug delivery. Besides this the magnetite doped diatoms have wide applications in removal of phosphates and chromium from waste water too.

Contact Angles and Surface Tension of Germanium-Silicon Melts

NASA Technical Reports Server (NTRS)

Croell, A.; Kaiser, N.; Cobb, S.; Szofran, F. R.; Volz, M.; Rose, M. Franklin (Technical Monitor)

2001-01-01

Precise knowledge of material parameters is more and more important for improving crystal growth processes. Two important parameters are the contact (wetting) angle and the surface tension, determining meniscus shapes and surface-tension driven flows in a variety of methods (Czochralski, EFG, floating-zone, detached Bridgman growth). The sessile drop technique allows the measurement of both parameters simultaneously and has been used to measure the contact angles and the surface tension of Ge(1-x)Si(x) (0 less than or equal to x less than or equal to 1.3) alloys on various substrate materials. Fused quartz, Sapphire, glassy carbon, graphite, SiC, carbon-based aerogel, pyrolytic boron nitride (pBN), AIN, Si3N4, and polycrystalline CVD diamond were used as substrate materials. In addition, the effect of different cleaning procedures and surface treatments on the wetting behavior were investigated. Measurements were performed both under dynamic vacuum and gas atmospheres (argon or forming gas), with temperatures up to 1100 C. In some experiments, the sample was processed for longer times, up to a week, to investigate any changes of the contact angle and/or surface tension due to slow reactions with the substrate. For pure Ge, stable contact angles were found for carbon-based substrates and for pBN, for Ge(1-x)Si(x) only for pBN. The highest wetting angles were found for pBN substrates with angles around 170deg. For the surface tension of Ge, the most reliable values resulted in gamma(T) = (591- 0.077 (T-T(sub m)) 10(exp -3)N/m. The temperature dependence of the surface tension showed similar values for Ge(1-x)Si(x), around -0.08 x 10(exp -3)N/m K, and a compositional dependence of 2.2 x 10(exp -3)N/m at%Si.

Super-hydrophobic multilayer coatings with layer number tuned swapping in surface wettability and redox catalytic anti-corrosion application.

PubMed

Syed, Junaid Ali; Tang, Shaochun; Meng, Xiangkang

2017-06-30

The wetting characteristic of a metal surface can be controlled by employing different coating materials and external stimuli, however, layer number (n) modulated surface swapping between hydrophobicity and hydrophilicity in a multilayer structure to achieve prolonged anti-corrosion ability was not taken into consideration. In this study, we proposed a layer-by-layer (LbL) spin assembled polyaniline-silica composite/tetramethylsilane functionalized silica nanoparticles (PSC/TMS-SiO 2 ) coating with the combined effect of super-hydrophobicity and enhanced anti-corrosion ability. Interestingly, the hierarchical integration of two coating materials with inherently different surface roughness and energy in a multilayer structure allows the wetting feature to swap from hydrophobic to hydrophilic state by modulating n with decreasing hydrophilicity. The samples with odd n (TMS-SiO 2 surface) are hydrophobic while the samples with even n (PSC surface) exhibits the hydrophilic character. The TMS-SiO 2 content was optimized to achieve super-hydrophobic coating with significantly high water contact angle (CA) 153° ± 2° and small sliding angle (SA) 6° ± 2°. Beside its self-cleaning behavior, the electro-active PSC/TMS-SiO 2 coating also exhibits remarkably enhanced corrosion resistance against aggressive media. The corrosion resistance of the coating was remained stable even after 240 h of exposure, this enhancement is attributed to super-hydrophobicity and anodic shift in corrosion potential.

Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition

DOE PAGES

Douglas, Erica A.; Sheng, Josephine J.; Verley, Jason C.; ...

2015-06-04

We found that the demand for integration of near infrared optoelectronic functionality with silicon complementary metal oxide semiconductor (CMOS) technology has for many years motivated the investigation of low temperature germanium on silicon deposition processes. Our work describes the development of a high density plasma chemical vapor deposition process that uses a low temperature (<460 °C) in situ germane/argon plasma surface preparation step for epitaxial growth of germanium on silicon. It is shown that the germane/argon plasma treatment sufficiently removes SiO x and carbon at the surface to enable germanium epitaxy. Finally, the use of this surface preparation step demonstratesmore » an alternative way to produce germanium epitaxy at reduced temperatures, a key enabler for increased flexibility of integration with CMOS back-end-of-line fabrication.« less

Sol-gel preparation of self-cleaning SiO2-TiO2/SiO2-TiO2 double-layer antireflective coating for solar glass

NASA Astrophysics Data System (ADS)

Lin, Wensheng; Zheng, Jiaxian; Yan, Lianghong; Zhang, Xinxiang

2018-03-01

Self-cleaning SiO2-TiO2/SiO2-TiO2 double-layer antireflective (AR) coating is prepared by sol-gel process. SiO2 sol is prepared by using tetraethyl orthosilicate (TEOS) as precursor and ammonia as catalyst, while TiO2 sol was prepared by using tetrabutyl orthotitanate (TBOT) as precursor and hydrochloric acid as catalyst. The effect of TiO2 content on refractive index, abrasion-resistance and photo-catalytic activity of SiO2-TiO2 hybrid thin films or powders is systematically investigated. It is found that the refractive index of SiO2-TiO2 hybrid thin films increases gradually from 1.18 to 1.53 as the weight ratio of TiO2 to SiO2 increased from 0 to 1.0. The SiO2-TiO2 hybrid thin film and powder possesses good abrasion-resistance and photo-catalytic activity, respectively, as the weight ratio of TiO2 to SiO2 is 0.4. The degradation degree of Rhodamine B by SiO2-TiO2 hybrid powder is 88.3%. Finally, SiO2-TiO2/SiO2-TiO2 double-layer AR coating with high transmittance, abrasion-resistance and self-cleaning property is realized.

Transfer the multiscale texture of crystalline Si onto thin-film micromorph cell by UV nanoimprint for light trapping

NASA Astrophysics Data System (ADS)

Liu, Daiming; Wang, Qingkang; Wang, Qing

2018-05-01

Surface texturing is of great significance in light trapping for solar cells. Herein, the multiscale texture, consisting of microscale pyramids and nanoscale porous arrangement, was fabricated on crystalline Si by KOH etching and Ag-assisted HF etching processes and subsequently replicated onto glass with high fidelity by UV nanoimprint method. Light trapping of the multiscale texture was studied by spectral (reflectance, haze ratio) characterizations. Results reveal the multiscale texture provides the broadband reflection reducing, the highlighted light scattering and the additional self-cleaning behaviors. Compared with bare cell, the multiscale textured micromorph cell achieves a 4% relative increase in power conversion efficiency. This surface texturing route paves a promising way for developing low-cost, large-scale and high-efficiency solar applications.

High-κ Al2O3 material in low temperature wafer-level bonding for 3D integration application

NASA Astrophysics Data System (ADS)

Fan, J.; Tu, L. C.; Tan, C. S.

2014-03-01

This work systematically investigated a high-κ Al2O3 material for low temperature wafer-level bonding for potential applications in 3D microsystems. A clean Si wafer with an Al2O3 layer thickness of 50 nm was applied as our experimental approach. Bonding was initiated in a clean room ambient after surface activation, followed by annealing under inert ambient conditions at 300 °C for 3 h. The investigation consisted of three parts: a mechanical support study using the four-point bending method, hermeticity measurements using the helium bomb test, and thermal conductivity analysis for potential heterogeneous bonding. Compared with samples bonded using a conventional oxide bonding material (SiO2), a higher interfacial adhesion energy (˜11.93 J/m2) and a lower helium leak rate (˜6.84 × 10-10 atm.cm3/sec) were detected for samples bonded using Al2O3. More importantly, due to the excellent thermal conductivity performance of Al2O3, this technology can be used in heterogeneous direct bonding, which has potential applications for enhancing the performance of Si photonic integrated devices.

Lowering the environmental impact of high-kappa/ metal gate stack surface preparation processes

NASA Astrophysics Data System (ADS)

Zamani, Davoud

ABSTRACT Hafnium based oxides and silicates are promising high-κ dielectrics to replace SiO2 as gate material for state-of-the-art semiconductor devices. However, integrating these new high-κ materials into the existing complementary metal-oxide semiconductor (CMOS) process remains a challenge. One particular area of concern is the use of large amounts of HF during wet etching of hafnium based oxides and silicates. The patterning of thin films of these materials is accomplished by wet etching in HF solutions. The use of HF allows dissolution of hafnium as an anionic fluoride complex. Etch selectivity with respect to SiO2 is achieved by appropriately diluting the solutions and using slightly elevated temperatures. From an ESH point of view, it would be beneficial to develop methods which would lower the use of HF. The first objective of this study is to find new chemistries and developments of new wet etch methods to reduce fluoride consumption during wet etching of hafnium based high-κ materials. Another related issue with major environmental impact is the usage of large amounts of rinsing water for removal of HF in post-etch cleaning step. Both of these require a better understanding of the HF interaction with the high-κ surface during the etching, cleaning, and rinsing processes. During the rinse, the cleaning chemical is removed from the wafers. Ensuring optimal resource usage and cycle time during the rinse requires a sound understanding and quantitative description of the transport effects that dominate the removal rate of the cleaning chemicals from the surfaces. Multiple processes, such as desorption and re-adsorption, diffusion, migration and convection, all factor into the removal rate of the cleaning chemical during the rinse. Any of these processes can be the removal rate limiting process, the bottleneck of the rinse. In fact, the process limiting the removal rate generally changes as the rinse progresses, offering the opportunity to save resources. The second objective of this study is to develop new rinse methods to reduce water and energy usage during rinsing and cleaning of hafnium based high-κ materials in single wafer-cleaning tools. It is necessary to have a metrology method which can study the effect of all process parameters that affect the rinsing by knowing surface concentration of contaminants in patterned hafnium based oxides and silicate wafers. This has been achieved by the introduction of a metrology method at The University of Arizona which monitors the transport of contaminant concentrations inside micro- and nano- structures. This is the only metrology which will be able to provide surface concentration of contaminants inside hafnium based oxides and silicate micro-structures while the rinsing process is taking place. The goal of this research is to study the effect of various process parameters on rinsing of patterned hafnium based oxides and silicate wafers, and modify a metrology method for end point detection.

Self-cleaning cotton functionalized with TiO2/SiO2: focus on the role of silica.

PubMed

Pakdel, Esfandiar; Daoud, Walid A

2013-07-01

This manuscript aims to investigate the functionalization of cotton fabrics with TiO2/SiO2. In this study, the sol-gel method was employed to prepare titania and silica sols and the functionalization was carried out using the dip-pad-dry-cure process. Titanium tetra isopropoxide (TTIP) and tetra ethyl orthosilicate (TEOS) were utilized as precursors of TiO2 and SiO2, respectively. TiO2/SiO2 composite sols were prepared in three different Ti:Si molar ratios of 1:0.43, 1:1, and 1:2.33. The self-cleaning property of cotton samples functionalized with TiO2/SiO2 was assessed based on the coffee stain removal capability and the decomposition rate of methylene blue under UV irradiation. FTIR study of the TiO2/SiO2 photocatalyst confirmed the existence of Si-O-Si and Ti-O-Si bonds. Scanning electron microscopy was employed to investigate the morphology of the functionalized cotton samples. The samples coated with TiO2/SiO2 showed greater ability of coffee stain removal and methylene blue degradation compared with samples functionalized with TiO2 demonstrating improved self-cleaning properties. The role of SiO2 in improving these properties is also discussed. Copyright © 2013 Elsevier Inc. All rights reserved.

Determination of the Wetting Angle of Germanium and Germanium-Silicon Melts on Different Substrate Materials

NASA Technical Reports Server (NTRS)

Kaiser, Natalie; Croell, Arne; Szofran, F. R.; Cobb. S. D.; Dold, P.; Benz, K. W.

1999-01-01

During Bridgman growth of semiconductors detachment of the crystal and the melt meniscus has occasionally been observed, mainly under microgravity (microg) conditions. An important factor for detached growth is the wetting angle of the melt with the crucible material. High contact angles are more likely to result in detachment of the growing crystal from the ampoule wall. In order to achieve detached growth of germanium (Ge) and germanium-silicon (GeSi) crystals under 1g and microg conditions, sessile drop measurements were performed to determine the most suitable ampoule material as well as temperature dependence of the surface tension for GeSi. Sapphire, fused quartz, glassy carbon, graphite, SiC, pyrolytic Boron Nitride (pBN), AIN, and diamond were used as substrates. Furthermore, different cleaning procedures and surface treatments (etching, sandblasting, etc.) of the same substrate material and their effect on the wetting behavior were studied during these experiments. pBN and AIN substrates exhibited the highest contact angles with values around 170 deg.

Engineering topological superconductors using surface atomic-layer/molecule hybrid materials

NASA Astrophysics Data System (ADS)

Uchihashi, Takashi

2015-08-01

Surface atomic-layer (SAL) superconductors consisting of epitaxially grown metal adatoms on a clean semiconductor surface have been recently established. Compared to conventional metal thin films, they have two important features: (i) space-inversion symmetry-breaking throughout the system and (ii) high sensitivity to surface adsorption of foreign species. These potentially lead to manifestation of the Rashba effect and a Zeeman field exerted by adsorbed magnetic organic molecules. After introduction of the archetypical SAL superconductor Si(111)-(√7 × √3)-In, we describe how these features are utilized to engineer a topological superconductor with Majorana fermions and discuss its promises and expected challenges.

Transparent, wear-resistant, superhydrophobic and superoleophobic poly(dimethylsiloxane) (PDMS) surfaces.

PubMed

Martin, Samuel; Bhushan, Bharat

2017-02-15

Superoleophobic surfaces that exhibit self-cleaning, antifouling, low-drag, and anti-smudge properties with high transparency are of interest in industrial applications including optical devices, solar panels, and self-cleaning windows. In many superoleophobic surfaces created to date, the lack of mechanical durability has been an issue. In this work, for the first time, transparent, wear-resistant, superhydrophobic and superoleophobic surfaces were developed for polydimethylsiloxane (PDMS) using a simple and scalable fabrication technique. PDMS is of importance in biomedical applications as it is biocompatible, chemically stable, and transparent. PDMS was made superhydrophobic either through micropatterning or an applied coating of hydrophobic SiO 2 nanoparticles with a binder of methylphenyl silicone resin. Through the addition of fluorination via fluorosilane, the nanoparticle/binder coating was made superoleophobic. Intermediate steps using ultraviolet-ozone treatment were required for improved deposition and adhesion of the coatings. The effects of surface treatments were examined through contact angle and tilt angle measurements. The coating was found to have re-entrant geometries desirable for superoleophobicity and to exhibit mechanical wear resistance and transparent properties. Copyright © 2016 Elsevier Inc. All rights reserved.

Stability of reference masses: VII. Cleaning methods in air and vacuum applied to a platinum mass standard similar to the international and national kilogram prototypes

NASA Astrophysics Data System (ADS)

Cumpson, Peter J.; Sano, Naoko; Barlow, Anders J.; Portoles, Jose F.

2013-10-01

Mercury contamination and the build-up of carbonaceous contamination are two contributing factors to the instability observed in kilogram prototype masses. The kilogram prototypes that lie at the core of the dissemination of the SI base unit were manufactured in the late 19th century, and have polished surfaces. In papers IV and V of this series we developed a method for cleaning noble metal mass standards in air to remove carbonaceous contamination. At the core of this ‘UVOPS’ protocol is the application of UV light and ozone gas generated in situ in air. The precise nature of the carbonaceous contamination that builds up on such surfaces is difficult to mimic demonstrably or quickly on new test surfaces, yet data from such tests are needed to provide the final confidence to allow UVOPS to be applied to a real 19th century kilogram prototype. Therefore, in the present work we have applied the UVOPS method to clean a platinum avoirdupois pound mass standard, ‘RS2’, manufactured in the mid-19th century. This is thought to have been polished in a similar manner to the kilogram prototypes. To our knowledge this platinum surface has not previously been cleaned by any method. We used x-ray photoelectron spectroscopy to identify organic contamination, and weighing to quantify the mass lost at each application of the UVOPS procedure. The UVOPS procedure is shown to be very effective. It is likely that the redefinition of the kilogram will require mass comparisons in vacuum in the years to come. Therefore, in addition to UVOPS a cleaning method for use in vacuum will also be needed. We introduce and evaluate gas cluster ion-beam (GCIB) treatment as a potential method for cleaning reference masses in vacuum. Again, application of this GCIB cleaning to a real artefact, RS2, allows us to make a realistic evaluation of its performance. While it has some attractive features, we cannot recommend it for cleaning mass standards in its present form.

Substrate-independent superliquiphobic coatings for water, oil, and surfactant repellency: An overview.

PubMed

Bhushan, Bharat; Martin, Samuel

2018-09-15

Superliquiphobic surfaces that exhibit self-cleaning, antifouling, finger touch resistance, and low drag properties with high transparency are of interest in industrial applications including optical devices, solar panels, and self-cleaning windows. In this paper, an overview of coatings using a simple and scalable fabrication technique are presented that exhibit superoleophobic/philic properties, wear resistance, finger touch resistance, and transparency. The coating comprises hydrophobic SiO 2 nanoparticles with a binder of methylphenyl silicone resin. After ultraviolet-ozone treatment to the coating, an additional coating of fluorosilane or fluorosurfactant modifies the coated surface for superoleophobicity or superoleophilicity, respectively. Data for these coatings are presented showing substrate independency, the ability to repel surfactant-containing liquids such as shampoo and laundry detergent, oil-water separation, and the ability to survive up to 80 °C environments. The coatings were designed to have re-entrant geometry desirable for superoleophobicity with liquids with very low surface tension as well as surfactants. Copyright © 2018 Elsevier Inc. All rights reserved.

Facet-Selective Epitaxy of Compound Semiconductors on Faceted Silicon Nanowires.

PubMed

Mankin, Max N; Day, Robert W; Gao, Ruixuan; No, You-Shin; Kim, Sun-Kyung; McClelland, Arthur A; Bell, David C; Park, Hong-Gyu; Lieber, Charles M

2015-07-08

Integration of compound semiconductors with silicon (Si) has been a long-standing goal for the semiconductor industry, as direct band gap compound semiconductors offer, for example, attractive photonic properties not possible with Si devices. However, mismatches in lattice constant, thermal expansion coefficient, and polarity between Si and compound semiconductors render growth of epitaxial heterostructures challenging. Nanowires (NWs) are a promising platform for the integration of Si and compound semiconductors since their limited surface area can alleviate such material mismatch issues. Here, we demonstrate facet-selective growth of cadmium sulfide (CdS) on Si NWs. Aberration-corrected transmission electron microscopy analysis shows that crystalline CdS is grown epitaxially on the {111} and {110} surface facets of the Si NWs but that the Si{113} facets remain bare. Further analysis of CdS on Si NWs grown at higher deposition rates to yield a conformal shell reveals a thin oxide layer on the Si{113} facet. This observation and control experiments suggest that facet-selective growth is enabled by the formation of an oxide, which prevents subsequent shell growth on the Si{113} NW facets. Further studies of facet-selective epitaxial growth of CdS shells on micro-to-mesoscale wires, which allows tuning of the lateral width of the compound semiconductor layer without lithographic patterning, and InP shell growth on Si NWs demonstrate the generality of our growth technique. In addition, photoluminescence imaging and spectroscopy show that the epitaxial shells display strong and clean band edge emission, confirming their high photonic quality, and thus suggesting that facet-selective epitaxy on NW substrates represents a promising route to integration of compound semiconductors on Si.

Vertical nanowire heterojunction devices based on a clean Si/Ge interface.

PubMed

Chen, Lin; Fung, Wayne Y; Lu, Wei

2013-01-01

Different vertical nanowire heterojunction devices were fabricated and tested based on vertical Ge nanowires grown epitaxially at low temperatures on (111) Si substrates with a sharp and clean Si/Ge interface. The nearly ideal Si/Ge heterojuctions with controlled and abrupt doping profiles were verified through material analysis and electrical characterizations. In the nSi/pGe heterojunction diode, an ideality factor of 1.16, subpicoampere reverse saturation current, and rectifying ratio of 10(6) were obtained, while the n+Si/p+Ge structure leads to Esaki tunnel diodes with a high peak tunneling current of 4.57 kA/cm(2) and negative differential resistance at room temperature. The large valence band discontinuity between the Ge and Si in the nanowire heterojunctions was further verified in the p+Si/pGe structure, which shows a rectifying behavior instead of an Ohmic contact and raises an important issue in making Ohmic contacts to heterogeneously integrated materials. A raised Si/Ge structure was further developed using a self-aligned etch process, allowing greater freedom in device design for applications such as the tunneling field-effect transistor (TFET). All measurement data can be well-explained and fitted with theoretical models with known bulk properties, suggesting that the Si/Ge nanowire system offers a very clean heterojunction interface with low defect density, and holds great potential as a platform for future high-density and high-performance electronics.

Development of Formulations for a-SiC and Manganese CMP and Post-CMP Cleaning of Cobalt

NASA Astrophysics Data System (ADS)

Lagudu, Uma Rames Krishna

We have investigated the chemical mechanical polishing (CMP) of amorphous SiC (a-SiC) and Mn and Post CMP cleaning of cobalt for various device applications. During the manufacture of copper interconnects using the damascene process the polishing of copper is followed by the polishing of the barrier material (Co, Mn, Ru and their alloys) and its post CMP cleaning. This is followed by the a-SiC hard mask CMP. Silicon carbide thin films, though of widespread use in microelectronic engineering, are difficult to process by CMP because of their hardness and chemical inertness. The earlier part of the SiC work discusses the development of slurries based on silica abrasives that resulted in high a-SiC removal rates (RRs). The ionic strength of the silica dispersion was found to play a significant role in enhancing material removal rate, while also providing very good post-polish surface-smoothness. For example, the addition of 50 mM potassium nitrate to a pH 8 aqueous slurry consisting of 10 wt % of silica abrasives and 1.47 M hydrogen peroxide increased the RR from about 150 nm/h to about 2100 nm/h. The role of ionic strength in obtaining such high RRs was investigated using surface zeta-potentials measurements and X-ray photoelectron spectroscopy (XPS). Evidently, hydrogen peroxide promoted the oxidation of Si and C to form weakly adhered species that were subsequently removed by the abrasive action of the silica particles. The effect of potassium nitrate in increasing material removal is attributed to the reduction in the electrostatic repulsion between the abrasive particles and the SiC surface because of screening of surface charges by the added electrolyte. We also show that transition metal compounds when used as additives to silica dispersions enhance a-SiC removal rates (RRs). Silica slurries containing potassium permanganate gave RRs as high as 2000 nm/h at pH 4. Addition of copper sulfate to this slurry further enhanced the RRs to ˜3500 nm/h at pH 6. Furthermore, addition of a low concentration of 250 ppm Brij-35 to this slurry suppressed the RRs of silicon dioxide to zero, while retaining the RRs of a-SiC at ˜2700 nm/h , a combination of RRs that is appropriate for hard mask polishing. The second part of this thesis focuses on the polishing of manganese which was proposed as a "self-forming" barrier material to prevent copper diffusion in advanced generation (22 nm and smaller) Si devices. A major challenge associated with such a self-forming Mn barrier for Cu interconnects in sub-22nm devices is galvanic corrosion that can occur at the Cu-Mn interface during chemical mechanical planarization. In the present work, it was shown that an aqueous solution of sucrose, BTA and potassium periodate reduces the corrosion potential gap between Cu and Mn to ˜ 0.01 V at pH 10 while also lowering the galvanic currents significantly and hence can be an excellent candidate for a polishing slurry. We discuss the role of these reagents and the inhibiting film that can be formed at the interface of the bimetallic system in this solution. Preliminary polishing results for Cu and Mn using a silica-based slurry formulated with this solution are also presented. The third part involves the development of compositions for Post CMP cleaning of cobalt barriers in advanced generation (22 nm and smaller). The thickness of the cobalt films was found to impact the corrosion behavior of the films. Thinner films of cobalt were found be more prone to galvanic corrosion in the presence of copper. The corrosion currents were low for both Cu and Co in all the solutions tested but the galvanic currents varied significantly. It was found that while BTA was not able to suppress the galvanic corrosion between Cu and Co (2000 A) at pH 8, either 60 mM of 3 Amino 1,2,4 triazole or 30 mM of 3 Amino 5 methyl thio 1,2,4 triazole were able to suppress the galvanic corrosion between Cu and Co (2000 A) to < 0.3 micro amperes per square cm at pH 8. These compositions however were not able to suppress the galvanic corrosion of Co (20 A) films. Changing the pH to 10 did not improve the results. Furthermore, addition of several complexing agents and other corrosion inhibitors also did not lower the Ecorr of Co (20 A) and Cu. Further experiments are being conducted to identify compositions to protect Co and Cu from corrosion. (Abstract shortened by UMI.).

Hollow Rodlike MgF2 with an Ultralow Refractive Index for the Preparation of Multifunctional Antireflective Coatings.

PubMed

Bao, Lei; Ji, Zihan; Wang, Hongning; Chen, Ruoyu

2017-06-27

Antireflective coatings with superhydrophobic, self-cleaning, and wide-spectrum high-transmittance properties and good mechanical strength have important practical value. In this research, hollow nanorod-like MgF 2 sols with different void volumes were prepared by a template-free solvothermal method to further obtain hollow nanorod-like MgF 2 crystals with an ultralow refractive index of 1.14. Besides, a MgF 2 coating with an adjustable refractive index of 1.10-1.35 was also prepared by the template-free solvothermal method. Then through the combination of base/acid two-step-catalyzed TEOS and hydroxyl modification on the surface of nanosilica spheres, the SiO 2 coating with good mechanical strength, a flat surface, and a refractive index of 1.30-1.45 was obtained. Double-layer broadband antireflective coatings with an average transmittance of 99.6% at 400-1400 nm were designed using the relevant optical theory. After the coating thickness was optimized by the dip-coating method, the double-layer antireflective coatings, whose parameters were consistent with those designed by the theory, were obtained. The bottom layer was a SiO 2 coating with a refractive index of 1.34 and a thickness of 155 nm, and the top layer was a hollow rodlike MgF 2 coating with a refractive index of 1.10 and a thickness of 165 nm. The average transmittance of the obtained MgF 2 -SiO 2 antireflective coatings was 99.1% at 400-1400 nm, which was close to the theoretical value. The hydrophobic angle of the coating surface reached 119° at first, and the angle further reached 152° after conducting surface modification by PFOTES. In addition, because the porosity of the coating surface was only 10.7%, the pencil hardness of the coating surface was 5 H and the critical load Lc was 27.05 N. In summary, the obtained antireflective coatings possessed superhydrophobic, self-cleaning, and wide-spectrum high-transmittance properties and good mechanical strength.

AlN grown on Si(1 1 1) by ammonia-molecular beam epitaxy in the 900-1200 °C temperature range

NASA Astrophysics Data System (ADS)

Tamariz, Sebastian; Martin, Denis; Grandjean, Nicolas

2017-10-01

We present a comprehensive study of AlN growth on Si(1 1 1) substrate by gas source molecular beam epitaxy with ammonia as nitrogen precursor in the high temperature range. We first demonstrate that the observation of the silicon 7 × 7 surface reconstruction by reflection high energy electron diffraction can be misleading as this technique is not sensitive to low density surface defects like SiC crystallites. A careful in situ cleaning procedure with annealing cycles at 1100 °C allows getting rid of any surface defects, as shown by atomic force microscopy imaging. Then, we explore the effect of the growth temperature on the surface morphology and structural properties of 100 nm thick AlN epilayers. At 1200 °C, the growth proceeds with the step flow mode regime, which induces spiral-growth around screw-type dislocations and therefore surface roughening. On the other hand, a smooth surface morphology can be achieved by setting the temperature at 1100 °C, which corresponds to the growth mode transition from two-dimensional nucleation to step flow. A further decrease of the growth temperature to 900 °C leads to surface defects ascribed to polarity inversion domains. Similar defects are observed for growths performed at 1100 °C when the NH3 flow is reduced below 100 sccm. This points out the sensitivity of AlN to the surface stoichiometry.

Fracture mode, microstructure and temperature-dependent elastic moduli for thermoelectric composites of PbTe-PbS with SiC nanoparticle additions

NASA Astrophysics Data System (ADS)

Ni, Jennifer E.; Case, Eldon D.; Schmidt, Robert D.; Wu, Chun-I.; Hogan, Timothy P.; Trejo, Rosa M.; Lara-Curzio, Edgar; Kanatzidis, Mercouri G.

2013-12-01

Twenty-six (Pb0.95Sn0.05Te)0.92(PbS)0.08-0.055% PbI2-SiC nanoparticle (SiCnp) composite thermoelectric specimens were either hot pressed or pulsed electric current sintered (PECS). Bloating (a thermally induced increase in porosity, P, for as-densified specimens) was observed during annealing at temperatures >603 K for hot-pressed specimens and PECS-processed specimens from wet milled powders, but in contrast seven out of seven specimens densified by PECS from dry milled powders showed no observable bloating following annealing at temperatures up to 936 K. In this study, bloating in the specimens was accessed via thermal annealing induced changes in (i) porosity measured by scanning electron microscopy on fractured specimen surfaces, (ii) specimen volume and (iii) elastic moduli. The moduli were measured by resonant ultrasound spectroscopy. SiCnp additions (1-3.5 vol.%) changed the fracture mode from intergranular to transgranular, inhibited grain growth, and limited bloating in the wet milled PECS specimens. Inhibition of bloating likely occurs due to cleaning of contamination from powder particle surfaces via PECS processing which has been reported previously in the literature.

Clean assembly and integration techniques for the Hubble Space Telescope High Fidelity Mechanical Simulator

NASA Technical Reports Server (NTRS)

Hughes, David W.; Hedgeland, Randy J.

1994-01-01

A mechanical simulator of the Hubble Space Telescope (HST) Aft Shroud was built to perform verification testing of the Servicing Mission Scientific Instruments (SI's) and to provide a facility for astronaut training. All assembly, integration, and test activities occurred under the guidance of a contamination control plan, and all work was reviewed by a contamination engineer prior to implementation. An integrated approach was followed in which materials selection, manufacturing, assembly, subsystem integration, and end product use were considered and controlled to ensure that the use of the High Fidelity Mechanical Simulator (HFMS) as a verification tool would not contaminate mission critical hardware. Surfaces were cleaned throughout manufacturing, assembly, and integration, and reverification was performed following major activities. Direct surface sampling was the preferred method of verification, but access and material constraints led to the use of indirect methods as well. Although surface geometries and coatings often made contamination verification difficult, final contamination sampling and monitoring demonstrated the ability to maintain a class M5.5 environment with surface levels less than 400B inside the HFMS.

Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and AlxOx Guard Ring Structure

PubMed Central

Li, Chien-Yu; Cheng, Min-Yu; Houng, Mau-Phon; Yang, Cheng-Fu; Liu, Jing

2018-01-01

In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs) with hydrogen plasma treatment on silicon surface and AlxOx guard ring were presented. The Si surface exhibited less interface defects after the cleaning process following with 30 w of H2 plasma treatment that improved the switching properties of the following formed SBDs. The rapid thermal annealing experiment also held at 400 °C to enhance the breakdown voltage of SBDs. The edge effect of the SBDs was also suppressed with the AlxOx guard ring structure deposited by the atomic layer deposition (ALD) at the side of the SBDs. Experimental results show that the reverse leakage current was reduced and the breakdown voltage increased with an addition of the AlxOx guard ring. The diode and fabrication technology developed in the study were applicable to the realization of SBDs with a high breakdown voltage (>200 V), a low reverse leakage current density (≤72 μA/mm2@100 V), and a Schottky barrier height of 1.074 eV. PMID:29316726

Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and AlxOx Guard Ring Structure.

PubMed

Li, Chien-Yu; Cheng, Min-Yu; Houng, Mau-Phon; Yang, Cheng-Fu; Liu, Jing

2018-01-08

In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs) with hydrogen plasma treatment on silicon surface and Al x O x guard ring were presented. The Si surface exhibited less interface defects after the cleaning process following with 30 w of H₂ plasma treatment that improved the switching properties of the following formed SBDs. The rapid thermal annealing experiment also held at 400 °C to enhance the breakdown voltage of SBDs. The edge effect of the SBDs was also suppressed with the Al x O x guard ring structure deposited by the atomic layer deposition (ALD) at the side of the SBDs. Experimental results show that the reverse leakage current was reduced and the breakdown voltage increased with an addition of the Al x O x guard ring. The diode and fabrication technology developed in the study were applicable to the realization of SBDs with a high breakdown voltage (>200 V), a low reverse leakage current density (≤72 μA/mm²@100 V), and a Schottky barrier height of 1.074 eV.

Nanoscale thin film growth of Au on Si(111)-7 × 7 surface by pulsed laser deposition method

NASA Astrophysics Data System (ADS)

Yokotani, Atsushi; Kameyama, Akihiro; Nakayoshi, Kohei; Matsunaga, Yuta

2017-03-01

To obtain important information for fabricating atomic-scale Au thin films that are used for biosensors, we have observed the morphology of Au particles adsorbed on a Si(111)-7 × 7 surface, which is supposed to be the initial stage of Au atomistic thin film formation. Au particles were adsorbed on the clean Si surface using a PLD method, and the adsorbed particles were observed using a scanning tunneling microscope. As the number of laser shots was increased in the PLD method, the size of the adsorbed particle became larger. The larger particles seemed to form clusters, which are aggregations of particles in which each particle is distinguished, so we call this type of cluster a film-shaped cluster. In this work, we have mainly analyzed this type of cluster. As a result the film-shaped clusters were found to have a structure of nearly monoatomic layers. The particles in the clusters were gathered closely in roughly a 3-fold structure with an inter particle distance of 0.864 nm. We propose a model for the cluster structure by modifying Au(111) face so that each observed particle consists of three Au atoms.

Dark, Infrared Reflective, and Superhydrophobic Coatings by Waterborne Resins.

PubMed

Zhang, Jing; Lin, Weiqiang; Zhu, Chenxi; Lv, Jian; Zhang, Weicheng; Feng, Jie

2018-05-15

Recently, infrared reflective pigments possessing deep colors have attracted much attention. However, in polluted air, the coatings consisting of such pigments are easily contaminated which abates infrared reflectivity. In this work, black and infrared reflective pigments, fluorine silicon sol and a small number of SiO 2 nanoparticles were introduced into waterborne epoxy resin emulsion and then coated on an aluminum plate. After drying, black coatings with infrared reflective and superhydrophobic (SH) properties were obtained. The average near-infrared (NIR) reflectivity of the coating over wavelength range of 780-2600 nm can reach 68%, which is much larger than that of carbon black coatings and even approaches that of white nano SiO 2 coatings. Under the irradiation of a 275-W infrared lamp (with height 40 cm), the surface temperature of the coating is 63 °C, which is much lower than that of the carbon black coating (90 °C) and only 7 °C higher than that of the white nano SiO 2 coating. Furthermore, the NIR reflective coating exhibited a typical SH property due to its low surface energy and high surface roughness, which may allow for self-cleaning performance in a practical environment, maintaining the coating's NIR reflective property.

Temperature dependent relaxation of interface-states in graphene on SiO2

NASA Astrophysics Data System (ADS)

Singh, Anil Kumar; Gupta, Anjan Kumar

2018-04-01

We have studied the evolution of resistance relaxation with temperature in graphene field effect transistor on SiO2. At room temperature, piranha-cleaned-SiO2 devices show slow resistance relaxation while IPA-cleaned-SiO2 devices do not. With cooling the former devices show a decrease in magnitude and time constant of the slow relaxation and it becomes negligible at 250K. Relaxation study at elevated temperature of the IPA-cleaned devices show a gate voltage polarity dependent time constant with respect to the charge neutrality point but it remains almost independent of temperature. The magnitude of relaxation increases with temperature. Further, after annealing at elevated temperature, we found that the relaxation times become independent of gate voltage polarity and its magnitude becomes very small. These observations are discussed using increase in diffusion of interface-species with temperature.

Recent Advances in Laser-Ablative Synthesis of Bare Au and Si Nanoparticles and Assessment of Their Prospects for Tissue Engineering Applications.

PubMed

Al-Kattan, Ahmed; Nirwan, Viraj P; Popov, Anton; Ryabchikov, Yury V; Tselikov, Gleb; Sentis, Marc; Fahmi, Amir; Kabashin, Andrei V

2018-05-24

Driven by surface cleanness and unique physical, optical and chemical properties, bare (ligand-free) laser-synthesized nanoparticles (NPs) are now in the focus of interest as promising materials for the development of advanced biomedical platforms related to biosensing, bioimaging and therapeutic drug delivery. We recently achieved significant progress in the synthesis of bare gold (Au) and silicon (Si) NPs and their testing in biomedical tasks, including cancer imaging and therapy, biofuel cells, etc. We also showed that these nanomaterials can be excellent candidates for tissue engineering applications. This review is aimed at the description of our recent progress in laser synthesis of bare Si and Au NPs and their testing as functional modules (additives) in innovative scaffold platforms intended for tissue engineering tasks.

A solid state physics approach to the interaction between organic molecules and interstellar dust grains: (C60) on SiC

NASA Astrophysics Data System (ADS)

Merino, P.; Martin-Gago, J. A.; Cernicharo, J.

2011-05-01

We have modeled the interaction of large organic molecules and dust grains in the interstellar medium by means of conventional surface science techniques such as scanning probe microscopes (SPM) and X-ray photoelectron spectroscopy (XPS) among others. With these surface analysis techniques, no frequently used in astrochemistry, we can recreate model systems where the interstellar environment, in a wide range of conditions of pressure and temperature, can be studied. The accurate control of the species that can be studied enables us to simulate in our laboratory the reactions of important molecules on the surface of dust grains. These new kind of experiments provide new information about the chemical mechanisms of the interaction between dust grains and organic molecules which can be compared with the models and the observations. We use a state of the art ultra high vacuum chamber (UHV) with base pressure of 1× 10-10 mbar (2× 106 ppcm^3) where we can prepare macroscopic single-crystal samples simulating a particular dust grain surface. The clean surfaces are exposed to different molecules. The complete system molecule-substrate can be characterized down to the Armstrong scale with the scanning tunneling microscope (STM) and even single molecule orbitals can be resolved. The combination of this technique with diffraction and spectroscopic tools allows us to fully understand the adsorption configuration and chemistry of a particular molecular species on a modeled dust grain surface. Here we present, as a proof-of-concept, the study of a broadly studied molecule, fullerene, (C60) on a silicon carbide (SiC) surface. The stellar winds of carbon-rich red-giants are rich in SiC grains in the inner hot (1500K) shell. These grains can then be covered with C_2 H_2, C H_4 and other hydrocarbons that could lead to complex organic molecules, even PAHs, when they move apart from the star. In the present study we simulate the reaction of C60 molecules with the Si rich (3x3) 6H α-SiC(0001). Although 6H α-SiC is not one of the most common polytypes of SiC in the interstellar atmospheres (mostly abundant in 2H α-SiC and 3C β-SiC) we will use these first results to compare with our on-going measurements on 3C β-SiC.

Genesis Solar Wind Collector Cleaning Assessment: Update on 60336 Sample Case Study

NASA Technical Reports Server (NTRS)

Goreva, Y. S.; Allums, K. K.; Gonzalez, C. P.; Jurewicz, A. J.; Burnett, D. S.; Allton, J. H.; Kuhlman, K. R.; Woolum, D.

2015-01-01

To maximize the scientific return of Genesis Solar Wind return mission it is necessary to characterize and remove a crash-derived particle and thin film surface contamination. A small subset of Genesis mission collector fragments are being subjected to extensive study via various techniques. Here we present an update on the sample 60336, a Czochralski silicon (Si-CZ) based wafer from the bulk array (B/C). This sample has undergone multiple cleaning steps (see the table below): UPW spin wash, aggressive chemical cleanings (including aqua regia, hot xylene and RCA1), as well as optical and chemical (EDS, ToF-SIMS) imaging. Contamination appeared on the surface of 60336 after the initial 2007 UPW cleaning. Aqua regia and hot xylene treatment (8/13/2013) did little to remove contaminants. The sample was UPW cleaned for the third time and imaged (9/16/13). The UPW removed the dark stains that were visible on the sample. However, some features, like "the Flounder" (a large, 100 micron feature in Fig. 1b) appeared largely intact, resisting all previous cleaning efforts. These features were likely from mobilized adhesive, derived from the Post-It notes used to stabilize samples for transport from Utah after the hard landing. To remove this contamination, an RCA step 1 organic cleaning (RCA1) was employed. Although we are still uncertain on the nature of the Flounder and why it is resistant to UPW and aqua regia/hot xylene treatment, we have found RCA1 to be suitable for its removal. It is likely that the glue from sticky pads used during collector recovery may have been a source for resistant organic contamination [9]; however [8] shows that UPW reaction with crash-derived organic contamination does not make particle removal more difficult.

Control of cavitation using dissolved carbon dioxide for damage-free megasonic cleaning of wafers

NASA Astrophysics Data System (ADS)

Kumari, Sangita

This dissertation describes the finding that dissolved carbon dioxide is a potent inhibitor of sonoluminescence and describes the implications of the finding in the development of improved megasonic cleaning formulations. Megasonic cleaning, or the removal of contaminants particles from wafer surfaces using sound-irradiated cleaning fluids, has been traditionally used in the semiconductor industry for cleaning of wafers. A critical challenge in the field is to achieve removal of small particles (22 nm to 200 nm) without causing damage to fine wafer features. The work described here addresses this challenge by identifying sonoluminescence and solution pH as two key factors affecting damage and cleaning efficiency, respectively and establishing novel means to control them using CO2(aq) release compounds in the presence of acids and bases. Sonoluminescence (SL) behavior of the major dissolved gases such as Ar, Air, N2, O2 and CO2 was determined using a newly designed Cavitation Threshold Cell (CT Cell). SL, which is the phenomenon of release of light in sound-irradiated liquids, is a sensitive indicator of cavitation, primarily transient cavitation. It was found that all the tested dissolved gases such as Ar, Air, N2 and O2, generated SL signal efficiently. However, dissolved CO2 was found to be completely incapable of generating SL signal. Based on this interesting result, gradual suppression of SL signal was demonstrated using CO2(aq). It was further demonstrated that CO2(aq) is not only incapable but is also a potent inhibitor of SL. The inhibitory role of CO2(aq) was established using a novel method of controlled in-situ release of CO 2 from NH4HCO3. ~130 ppm CO2(aq) was shown to be necessary and sufficient for complete suppression of SL generation in air saturated DI water. The method however required acidification of solution for significant release of CO2, making it unsuitable for the design of cleaning solutions at high pH. Analysis of the underlying ionic equilibria revealed that the loss of released CO2(aq) upon increase in pH can be compensated by moderate increase in added NH4HCO3. Using this method, simultaneous control of SL and solution pH was demonstrated in two systems, NH4HCO3/HCl and NH4OH/CO2, at two nominal pH values; 5.7 and 7.0. Damage studies were performed on wafer samples with line/space patterns donated by IMEC and FSI International bearing Si/metal/a-Si gate stacks of thickness ~36 nm and Si/Poly-Si gate stacks of thickness ~67 nm, respectively. A single wafer spin cleaning tool MegPieRTM was used for the generation of megasonic energy for inducing damage to the structures. It was demonstrated that CO2 dissolution in DI water suppresses damage to the gate stacks in a dose-dependent manner. Together, these studies establish a systematic and strong correlation between CO2(aq) concentration, SL suppression and damage suppression. Significant damage reduction (~50 % to ~90 %) was observed at [CO2(aq)] > ~300 ppm. It was also demonstrated that CO2(aq) suppresses damage under alkaline pH condition too. This demonstration was made possible by the successful design of two new cleaning systems NH4HCO3/NH4OH and CO2/NH 4OH that could generate CO2(aq) under alkaline conditions. Damage suppressing ability of the newly designed cleaning systems were compared to the standard cleaning system NH4OH at pH 8.2 and it was found that NH4HCO3/NH4OH and CO2/NH 4OH systems were 80 % more efficient in suppressing damage compared to the standard NH4OH cleaning system. Finally, megasonic cleaning studies were conducted in the same single wafer spin cleaning tool MegPieRTM, using SiO2 particles (size 185 nm) deposited on 200 mm oxide Si wafers, as the contaminant. It was found that the standard cleaning chemical, NH4OH, pH 8.2, was effective in achieving > 95 % particle removal for 2 min irradiation of megasonic energy at power densities > 0.7 W/cm2. Based on these results, a new system, NH4HCO3/NH4OH, was designed with an aim to release ~300 ppm CO2 at pH 8.2. It was demonstrated that newly designed system NH4HCO3/NH 4OH, allowed significant suppression of damage in comparison to NH 4OH while maintaining > 90 % cleaning efficiency that was comparable to NH4OH solution, at the same acoustic power densities. Taken together, these studies establish a potent and flexible means for the inhibition of SL generation over a wide pH range and acoustic power densities and demonstrate its use in suppression of wafer damage without compromising megasonic cleaning efficiency. (Abstract shortened by UMI.)

First-principles study of spin-transfer torque in Co{sub 2}MnSi/Al/Co{sub 2}MnSi spin-valve

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, Ling, E-mail: lingtang@zjut.edu.cn; Yang, Zejin, E-mail: zejinyang@zjut.edu.cn

The spin-transfer torque (STT) in Co{sub 2}MnSi(CMS)/Al/Co{sub 2}MnSi spin-valve system with and without interfacial disorder is studied by a first-principles noncollinear wave-function-matching method. It is shown that in the case of clean interface the angular dependence of STT for CoCo/Al (the asymmetry parameter Λ≈4.5) is more skewed than that for MnSi/Al (Λ≈2.9), which suggests the clean CoCo/Al architecture is much more efficient for the application on radio frequency oscillation. We also find that even with interfacial disorder the spin-valve of half-metallic CMS still has a relatively large parameter Λ compared to that of conventional ferromagnet. In addition, for clean interfacemore » the in-plane torkance of MnSi/Al is about twice as large as that of CoCo/Al. However, as long as the degree of interfacial disorder is sufficiently large, the CoCo/Al and MnSi/Al will show approximately the same magnitude of in-plane torkance. Furthermore, our results demonstrate that CMS/Al/CMS system has very high efficiency of STT to switch the magnetic layer of spin-valve.« less

Salt-assisted clean transfer of continuous monolayer MoS2 film for hydrogen evolution reaction

NASA Astrophysics Data System (ADS)

Cho, Heung-Yeol; Nguyen, Tri Khoa; Ullah, Farman; Yun, Jong-Won; Nguyen, Cao Khang; Kim, Yong Soo

2018-03-01

The transfer of two-dimensional (2D) materials from one substrate to another is challenging but of great importance for technological applications. Here, we propose a facile etching and residue-free method for transferring a large-area monolayer MoS2 film continuously grown on a SiO2/Si by chemical vapor deposition. Prior to synthesis, the substrate is dropped with water- soluble perylene-3, 4, 9, 10-tetracarboxylic acid tetrapotassium salt (PTAS). The as-grown MoS2 on the substrate is simply dipped in water to quickly dissolve PTAS to yield the MoS2 film floating on the water surface, which is subsequently transferred to the desired substrate. The morphological, optical and X-ray photoelectron spectroscopic results show that our method is useful for fast and clean transfer of the MoS2 film. Specially, we demonstrate that monolayer MoS2 film transferred onto a conducting substrate leads to excellent performance for hydrogen evolution reaction with low overpotential (0.29 V vs the reversible hydrogen electrode) and Tafel slope (85.5 mV/decade).

Development of Omniphobic Desalination Membranes Using a Charged Electrospun Nanofiber Scaffold.

PubMed

Lee, Jongho; Boo, Chanhee; Ryu, Won-Hee; Taylor, André D; Elimelech, Menachem

2016-05-04

In this study, we present a facile and scalable approach to fabricate omniphobic nanofiber membranes by constructing multilevel re-entrant structures with low surface energy. We first prepared positively charged nanofiber mats by electrospinning a blend polymer-surfactant solution of poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) and cationic surfactant (benzyltriethylammonium). Negatively charged silica nanoparticles (SiNPs) were grafted on the positively charged electrospun nanofibers via dip-coating to achieve multilevel re-entrant structures. Grafted SiNPs were then coated with fluoroalkylsilane to lower the surface energy of the membrane. The fabricated membrane showed excellent omniphobicity, as demonstrated by its wetting resistance to various low surface tension liquids, including ethanol with a surface tension of 22.1 mN/m. As a promising application, the prepared omniphobic membrane was tested in direct contact membrane distillation to extract water from highly saline feed solutions containing low surface tension substances, mimicking emerging industrial wastewaters (e.g., from shale gas production). While a control hydrophobic PVDF-HFP nanofiber membrane failed in the desalination/separation process due to low wetting resistance, our fabricated omniphobic membrane exhibited a stable desalination performance for 8 h of operation, successfully demonstrating clean water production from the low surface tension feedwater.

First results on plasma-surface interactions in the tokamak de varennes

NASA Astrophysics Data System (ADS)

Terreault, B.; Boucher, C.; Paynter, R. W.; Ross, G. G.; ThÉriault, D.; Abel, G.; Boivin, R.; Bolton, R. A.; Castracane, J.; Chevalier, G.; Couture, P.; Décoste, R.; Demers, Y.; Dimoff, K.; Glaude, V.; Gregory, B. C.; Haddad, E.; Janicki, C.; Kalnavarns, J.; Lachambre, J. L.; Mai, H. H.; Neufeld, C. R.; Pacher, H. D.; Pacher, G. W.; Richard, N.; Saint-Jacques, R. G.; Saint-Onge, M.; Simm, C.; Stansfield, B. L.; Veilleux, G.; Whyte, D.; Zuzak, W.

1989-04-01

Results of plasma-surface interaction studies made during the early phases of operation of the Tokamak de Varennes are summarized. It was found that the desorption of molecules from the internal walls by UV radiation can be used to reduce the base pressure. Auger depth profiling of stainless steel (SS) samples exposed to hydrogen discharge cleaning has been performed. Glow discharges at about 0.1 mbar etch the surface carbon and oxide at a rate of 0.5 nm/h. RF-glow discharges at 10 -3 mbar result in a rapid reduction of the oxide and its replacement by a carbide layer (the graphite limiters being the source of the carbon). Long-term wall samples of SS and Si have been profiled by Auger and nuclear analysis. The SS sample has a similar composition to that exposed to the RF-glow conditioning. The Si sample is covered by a 3 nm deposit of metals, C and O, and contains 10 16 H/cm 2 within 30 nm of the surface; this dose and width are consistent with the history of the sample.

Studies of the Ge(100) Surface Using a Low Energy Positron Beam: The Effects of Surface Reconstructions on Positron Trapping and Annihilation Characteristics

NASA Astrophysics Data System (ADS)

Fazleev, N. G.; Weiss, A. H.

2008-03-01

Positron annihilation induced Auger electron spectroscopy (PAES) has been applied to study the Ge(100) surface. The PAES spectrum from the Ge(100) surface displays several strong Auger peaks corresponding to M4,5N1N2,3 , M2,3M4,5M4,5 , M2,3M4,5V, and M1M4,5M4,5 Auger transitions. The integrated peak intensities of Auger transitions are used to obtain experimental annihilation probabilities for the Ge 3d and 3p core level electrons. The experimental results are analyzed by performing calculations of positron surface states and annihilation characteristics of surface trapped positrons with relevant Ge core-level electrons for the reconstructed Ge(100)-p(2x1), Ge(100)-p(2x2), and Ge(100)-c(4x2) surfaces. Estimates of positron binding energy, work function, and annihilation characteristics reveal their sensitivity to surface reconstruction of the topmost layers of clean Ge(100). These results are compared to the ones obtained for the reconstructed Si(100)-(2x1) and Si(100)-p(2x2) surfaces. A comparison with PAES data reveals an agreement with theoretical core annihilation probabilities for the Auger transitions considered.

A Numerical Wind Tunnel Study of Viscous-Inviscid Interaction

DTIC Science & Technology

1992-01-01

partially successful. In Task 1 we devised surface boundary conditions for the multiscale model including effects of roughness and blowing. This work tied up ...directed at cleaning up some loose ends in de- veloping the Wilcox multiscale model (see Appendix R). The most significant issue was the development of...the following correlation between SR and k , will reproduce measured effects of sand-grain roughness for values of k up to about 400. ( k, ញ SiR (42

Improved Si0.5Ge0.5/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopy

NASA Astrophysics Data System (ADS)

Liao, M.-H.; Chen, C.-H.

2013-04-01

The Positron Annihilation Spectra (PAS), Raman, and Photoluminescence spectroscopy reveal that Si0.5Ge0.5/Si interface quality can be significantly improved by the low energy plasma cleaning process using hydrogen. In the PAS, the particularly small value of lifetime and intensity near the Si0.5Ge0.5/Si interface in the sample with the treatment indicate that the defect concentration is successfully reduced 2.25 times, respectively. Fewer defects existed in the Si0.5Ge0.5/Si interface result in the high compressive strain about 0.36% in the top epi-Si0.5Ge0.5 layer, which can be observed in Raman spectra and stronger radiative recombination rate about 1.39 times for the infrared emission, which can be observed in the photoluminescence spectra. With better Si0.5Ge0.5/Si interface quality, the SiGe-based devices can have better optical and electrical characteristics for more applications in the industry. The PAS is also demonstrated that it is the useful methodology tool to quantify the defect information in the SiGe-based material.

Low temperature wafer-level bonding for hermetic packaging of 3D microsystems

NASA Astrophysics Data System (ADS)

Tan, C. S.; Fan, J.; Lim, D. F.; Chong, G. Y.; Li, K. H.

2011-07-01

Metallic copper-copper (Cu-Cu) thermo-compression bonding, oxide-oxide (SiO2-SiO2) fusion bonding and silicon-silicon (Si-Si) direct bonding are investigated for potential application as hermetic seal in 3D microsystem packaging. Cavities are etched to a volume of 1.4 × 10-3 cm3 in accordance with the MIL-STD-883E standard prescribed for microelectronics packaging. In the case of metal bonding, a clean Cu layer with a thickness of 300 nm and a Ti barrier layer with an underlying thickness of 50 nm are used. The wafer pair is bonded at 300 °C under the application of a bonding force of 5500 N for 1 h. On the other hand, Si-Si bonding and SiO2-SiO2 bonding are initiated at room ambient after surface activation, followed by annealing in inert ambient at 300 °C for 1 h. The bonded cavities are stored in a helium bomb chamber and the leak rate is measured with a mass spectrometer. An excellent helium leak rate below 5 × 10-9 atm cm3 s-1 is detected for all cases and this is at least ten times better than the reject limit.

Fabricating and Controlling Silicon Zigzag Nanowires by Diffusion-Controlled Metal-Assisted Chemical Etching Method.

PubMed

Chen, Yun; Zhang, Cheng; Li, Liyi; Tuan, Chia-Chi; Wu, Fan; Chen, Xin; Gao, Jian; Ding, Yong; Wong, Ching-Ping

2017-07-12

Silicon (Si) zigzag nanowires (NWs) have a great potential in many applications because of its high surface/volume ratio. However, fabricating Si zigzag NWs has been challenging. In this work, a diffusion-controlled metal-assisted chemical etching method is developed to fabricate Si zigzag NWs. By tailoring the composition of etchant to change its diffusivity, etching direction, and etching time, various zigzag NWs can be easily fabricated. In addition, it is also found that a critical length of NW (>1 μm) is needed to form zigzag nanowires. Also, the amplitude of zigzag increases as the location approaches the center of the substrate and the length of zigzag nanowire increases. It is also demonstrated that such zigzag NWs can help the silicon substrate for self-cleaning and antireflection. This method may provide a feasible and economical way to fabricate zigzag NWs and novel structures for broad applications.

Driving Organic Molecule Crystalliztion with Surface Reconstructions

NASA Astrophysics Data System (ADS)

Bickel, Jessica; Trovato, Gianfranco

This work examines how surface reconstructions can drive crystallization of organic molecules via self-assembly. Organic electronic molecules have low conductivities compared to inorganic materials, but crystallizing these polymers increases their conductivity. This project uses surface reconstructions with periodically repeating topographies to drive the crystallization process. The samples are grown by placing a drop of a dilute PEDOT solution on the clean Si(001)-(2x1) or Si(111)-(7x7) surface reconstruction and heating the surface up to both evaporate the solvent and promote diffusion of the polymer to the thermodynamically defined lowest energy position. The resulting samples are characterized by scanning tunneling microscopy (STM) with respect to their crystallinity and electronic properties. Of particular interest is whether there is a preferential location for the PEDOT molecule to adsorb and whether there are any conformational changes upon adsorption that modify the HOMO-LUMO gap. This work is being done in a new pan-style RHK-STM enclosed in a glovebox at Cleveland State University. The glovebox has O2 and H2O levels of less than 1ppm. This allows for sample preparation and imaging in a controlled environment that is free from contamination.

High-Resolution Electron Energy Loss Studies of Oxygen, Hydrogen, Nitrogen, Nitric Oxide, and Nitrous Oxide Adsorption on Germanium Surfaces.

NASA Astrophysics Data System (ADS)

Entringer, Anthony G.

The first high resolution electron energy loss spectroscopy (HREELS) studies of the oxidation and nitridation of germanium surfaces are reported. Both single crystal Ge(111) and disordered surfaces were studied. Surfaces were exposed to H, O_2, NO, N _2O, and N, after cleaning in ultra-high vacuum. The Ge surfaces were found to be non-reactive to molecular hydrogen (H_2) at room temperature. Exposure to atomic hydrogen (H) resulted hydrogen adsorption as demonstrated by the presence of Ge-H vibrational modes. The HREEL spectrum of the native oxide of Ge characteristic of nu -GeO_2 was obtained by heating the oxide to 200^circC. Three peaks were observed at 33, 62, and 106 meV for molecular oxygen (O_2) adsorbed on clean Ge(111) at room temperature. These peaks are indicative of dissociative bonding and a dominant Ge-O-Ge bridge structure. Subsequent hydrogen exposure resulted in a shift of the Ge-H stretch from its isolated value of 247 meV to 267 meV, indicative of a dominant +3 oxidation state. A high density of dangling bonds and defects and deeper oxygen penetration at the amorphous Ge surface result in a dilute bridge structure with a predominant +1 oxidation state for similar exposures. Molecules of N_2O decompose at the surfaces to desorbed N_2 molecules and chemisorbed oxygen atoms. In contrast, both oxygen and nitrogen are detected at the surfaces following exposure to NO molecules. Both NO and N_2O appear to dissociate and bond at the top surface layer. Molecular nitrogen (N_2) does not react with the Ge surfaces, however, a precursor Ge nitride is observed at room temperature following exposure to nitrogen atoms and ions. Removal of oxygen by heating of the NO-exposed surface to 550^circC enabled the identification of the Ge-N vibrational modes. These modes show a structure similar to that of germanium nitride. This spectrum is also identical to that of the N-exposed surface heated to 550^circC. Surface phonon modes of the narrow-gap semiconducting compounds Mg _2Sn, Mg_2Ge and Mg _2Si were detected at 29, 32, and 40 meV, respectively. The native oxide of all three show a dominant Mg-O mode at 80 meV. Probable Sn-O, Ge-O, and Si-O modes are also identified. Complete removal of the oxide layer was accomplished only on the Mg_2 Si surface but resulted in no noticeable change in the energy of the surface phonon. Results are compared to the known bulk optical properties of these compounds.

Graphene as a Buffer Layer for Silicon Carbide-on-Insulator Structures

PubMed Central

Astuti, Budi; Tanikawa, Masahiro; Rahman, Shaharin Fadzli Abd; Yasui, Kanji; Hashim, Abdul Manaf

2012-01-01

We report an innovative technique for growing the silicon carbide-on-insulator (SiCOI) structure by utilizing polycrystalline single layer graphene (SLG) as a buffer layer. The epitaxial growth was carried out using a hot-mesh chemical vapor deposition (HM-CVD) technique. Cubic SiC (3C-SiC) thin film in (111) domain was realized at relatively low substrate temperature of 750 °C. 3C-SiC energy bandgap of 2.2 eV was confirmed. The Si-O absorption band observed in the grown film can be caused by the out-diffusion of the oxygen atom from SiO2 substrate or oxygen doping during the cleaning process. Further experimental works by optimizing the cleaning process, growth parameters of the present growth method, or by using other growth methods, as well, are expected to realize a high quality SiCOI structure, thereby opening up the way for a breakthrough in the development of advanced ULSIs with multifunctionalities.

Theoretical and material studies on thin-film electroluminescent devices

NASA Technical Reports Server (NTRS)

Summers, C. J.; Goldman, J. A.; Brennan, K.

1988-01-01

During this report period work was performed on the modeling of High Field Electronic Transport in Bulk ZnS and ZnSe, and also on the surface cleaning of Si for MBE growth. Some MBE growth runs have also been performed in the Varian GEN II System. A brief outline of the experimental work is given. A complete summary will be done at the end of the next reporting period at the completion of the investigation. The theoretical studies are included.

Thermal conductance at atomically clean and disordered silicon/aluminum interfaces: A molecular dynamics simulation study

NASA Astrophysics Data System (ADS)

Ih Choi, Woon; Kim, Kwiseon; Narumanchi, Sreekant

2012-09-01

Thermal resistance between layers impedes effective heat dissipation in electronics packaging applications. Thermal conductance for clean and disordered interfaces between silicon (Si) and aluminum (Al) was computed using realistic Si/Al interfaces and classical molecular dynamics with the modified embedded atom method potential. These realistic interfaces, which include atomically clean as well as disordered interfaces, were obtained using density functional theory. At 300 K, the magnitude of interfacial conductance due to phonon-phonon scattering obtained from the classical molecular dynamics simulations was approximately five times higher than the conductance obtained using analytical elastic diffuse mismatch models. Interfacial disorder reduced the thermal conductance due to increased phonon scattering with respect to the atomically clean interface. Also, the interfacial conductance, due to electron-phonon scattering at the interface, was greater than the conductance due to phonon-phonon scattering. This indicates that phonon-phonon scattering is the bottleneck for interfacial transport at the semiconductor/metal interfaces. The molecular dynamics modeling predictions for interfacial thermal conductance for a 5-nm disordered interface between Si/Al were in-line with recent experimental data in the literature.

Plasma Surface Modification of Polymer Backsheets: Origins of Future Interfacial Barrier/Backsheet Failure (Poster)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pankow, J. W.; Glick, S. H.

2006-05-01

Flexible polymer substrates coated with inorganic oxide moisture barriers are a potential replacement for glass backsheets in thin-film PV (photovoltaic) modules. Silicon oxynitride (SiO{sub x}N{sub y}) deposited by plasma enhanced chemical vapor deposition (PECVD) on polyethylene terephthalate (PET) represents one potential new backsheet candidate. Barrier deposition runs at NREL have included a nitrogen-rich plasma pretreatment prior to barrier deposition with the intention of cleaning the PET surface and enhancing adhesion of the SiO{sub x}N{sub y} barrier film to PET; however, test coupons of PET/barrier/EVA/TPE failed after damp-heat exposure. (EVA is ethylene vinyl acetate and TPE is Tedlar{reg_sign}-PET-EVA). PET substrates exposedmore » to plasma conditions similar to those used in pretreatment were examined by X-ray photoelectron spectroscopy (XPS) to reveal that new low molecular weight PET fragments were created at the PET surface. These fragments are responsible for barrier/PET interfacial failure and barrier transfer to the EVA encapsulant side following damp heat exposure.« less

Manual versus automated methods for cleaning reusable accessory devices used for minimally invasive surgical procedures.

PubMed

Alfa, M J; Nemes, R

2004-09-01

We undertook a simulated-use study using quantitative methods to evaluate the cleaning efficacy of ported and non-ported accessory devices used in minimally invasive surgery. We chose laparoscopic scissors and forceps to represent worst-case devices which were inoculated with artificial test soil containing 10(6) cfu/mL Enterococcus faecalis and Geobacillus stearothermophilus and allowed to dry for 1 h. Cleaning was performed manually, as well as by the automated SI-Auto Narrow lumen cleaner. Manual cleaning left two- to 50-fold more soil residuals (protein, haemoglobin and carbohydrate) inside the lumen of non-ported versus ported laparoscopic accessory devices. The SI-Auto Narrow lumen cleaner was more efficient than manual cleaning and achieved >99% reduction in soil parameters in both non-ported (using retro-flushing) and ported laparoscopic devices. Only the automated cleaning of ported devices achieved 10(3)-10(4)-fold reduction in bacterial numbers. Sonication alone (no flushing of inner channel) did not effectively remove soil or organisms from the inner channel. Our findings indicate that non-ported accessory devices cannot be as reliably cleaned as ported devices regardless of the cleaning method used. If non-ported accessory devices are reprocessed, they should be cleaned using retro-flushing in an automated narrow lumen cleaner.

Plasma-assisted oxide removal from ruthenium-coated EUV optics

NASA Astrophysics Data System (ADS)

Dolgov, A.; Lee, C. J.; Bijkerk, F.; Abrikosov, A.; Krivtsun, V. M.; Lopaev, D.; Yakushev, O.; van Kampen, M.

2018-04-01

An experimental study of oxide reduction at the surface of ruthenium layers on top of multilayer mirrors and thin Ru/Si films is presented. Oxidation and reduction processes were observed under conditions close to those relevant for extreme ultraviolet lithography. The oxidized ruthenium surface was exposed to a low-temperature hydrogen plasma, similar to the plasma induced by extreme ultraviolet radiation. The experiments show that hydrogen ions are the main reducing agent. Furthermore, the addition of hydrogen radicals increases the reduction rate beyond that expected from simple flux calculations. We show that low-temperature hydrogen plasmas can be effective for reducing oxidized top surfaces. Our proof-of-concept experiments show that an in situ, EUV-generated plasma cleaning technology is feasible.

Review on effect of chemical, thermal, additive treatment on mechanical properties of basalt fiber and their composites

NASA Astrophysics Data System (ADS)

Jain, Naman; Singh, Vinay Kumar; Chauhan, Sakshi

2017-12-01

Basalt fiber is emerging out the new reinforcing material for composites. To overcome some of the disadvantages of fibers such as poor bonding to polymers, low thermal stability and high moisture absorption fiber characteristics are modified with chemical, thermal and additive treatments. Chemical treatment corrosive resistance to alkali and acid were investigated which were used to clean and modify the surface of fiber for higher bonding with resins. To improve the thermal stability and reduce moisture uptake thermal treatment such as plasma and non thermal plasma were used which increased the surface roughness and change the chemical composition of surface of basalt fiber. Additive treatment is used to improve the mechanical properties of fibers, in basalt fiber additive treatment was done with SiO2 additive because of its chemical composition which contains major content of SiO2. In present investigation review on the effect of different treatment such as chemical, thermal and additive were studied. Effect of these treatment on chemical composition of the surface of basalt fiber and corrosion to acidic and alkali solution were studied with their effect on mechanical properties of basalt fiber and their composite.

Restraint deformation and corrosion protection of gold deposited aluminum mirrors for cold optics of mid-infrared instruments

NASA Astrophysics Data System (ADS)

Uchiyama, Mizuho; Miyata, Takashi; Sako, Shigeyuki; Kamizuka, Takafumi; Nakamura, Tomohiko; Asano, Kentaro; Okada, Kazushi; Onaka, Takashi; Sakon, Itsuki; Kataza, Hirokazu; Sarugaku, Yuki; Kirino, Okiharu; Nakagawa, Hiroyuki; Okada, Norio; Mitsui, Kenji

2014-07-01

We report the restraint deformation and the corrosion protection of gold deposited aluminum mirrors for mid-infrared instruments. To evaluate the deformation of the aluminum mirrors by thermal shrinkage, monitoring measurement of the surface of a mirror has been carried out in the cooling cycles from the room temperature to 100 K. The result showed that the effect of the deformation was reduced to one fourth if the mirror was screwed with spring washers. We have explored an effective way to prevent the mirror from being galvanically corroded. A number of samples have been prepared by changing the coating conditions, such as inserting an insulation layer, making a multi-layer and overcoating water blocking layer, or carrying out precision cleaning before coating. Precision cleaning before the deposition and protecting coat with SiO over the gold layer seemed to be effective in blocking corrosion of the aluminum. The SiO over-coated mirror has survived the cooling test for the mid-infrared use and approximately 1 percent decrease in the reflectance has been detected at 6-25 microns compared to gold deposited mirror without coating.

Surface recombination velocity imaging of wet-cleaned silicon wafers using quantitative heterodyne lock-in carrierography

NASA Astrophysics Data System (ADS)

Sun, Qiming; Melnikov, Alexander; Mandelis, Andreas; Pagliaro, Robert H.

2018-01-01

InGaAs-camera based heterodyne lock-in carrierography (HeLIC) is developed for surface recombination velocity (SRV) imaging characterization of bare (oxide-free) hydrogen passivated Si wafer surfaces. Samples prepared using four different hydrofluoric special-solution etching conditions were tested, and a quantitative assessment of their surface quality vs. queue-time after the hydrogen passivation process was made. The data acquisition time for an SRV image was about 3 min. A "round-trip" frequency-scan mode was introduced to minimize the effects of signal transients on data self-consistency. Simultaneous best fitting of HeLIC amplitude-frequency dependencies at various queue-times was used to guarantee the reliability of resolving surface and bulk carrier recombination/transport properties. The dynamic range of the measured SRV values was established from 0.1 to 100 m/s.

Band line-up determination at p- and n-type Al/4H-SiC Schottky interfaces using photoemission spectroscopy

NASA Astrophysics Data System (ADS)

Kohlscheen, J.; Emirov, Y. N.; Beerbom, M. M.; Wolan, J. T.; Saddow, S. E.; Chung, G.; MacMillan, M. F.; Schlaf, R.

2003-09-01

The band lineup of p- and n-type 4H-SiC/Al interfaces was determined using x-ray photoemission spectroscopy (XPS). Al was deposited in situ on ex situ cleaned SiC substrates in several steps starting at 1.2 Å up to 238 Å nominal film thickness. Before growth and after each growth step, the sample surface was characterized in situ by XPS. The analysis of the spectral shifts indicated that during the initial deposition stages the Al films react with the ambient surface contamination layer present on the samples after insertion into vacuum. At higher coverage metallic Al clusters are formed. The band lineups were determined from the analysis of the core level peak shifts and the positions of the valence bands maxima (VBM) depending on the Al overlayer thickness. Shifts of the Si 2p and C 1s XPS core levels occurred to higher (lower) binding energy for the p-(n-)type substrates, which was attributed to the occurrence of band bending due to Fermi-level equilibration at the interface. The hole injection barrier at the p-type interface was determined to be 1.83±0.1 eV, while the n-type interface revealed an electron injection barrier of 0.98±0.1 eV. Due to the weak features in the SiC valence bands measured by XPS, the VBM positions were determined using the Si 2p peak positions. This procedure required the determination of the Si 2p-to-VBM binding energy difference (99.34 eV), which was obtained from additional measurements.

Novel nanofluidic chemical cells based on self-assembled solid-state SiO2 nanotubes.

PubMed

Zhu, Hao; Li, Haitao; Robertson, Joseph W F; Balijepalli, Arvind; Krylyuk, Sergiy; Davydov, Albert V; Kasianowicz, John J; Suehle, John S; Li, Qiliang

2017-10-27

Novel nanofluidic chemical cells based on self-assembled solid-state SiO 2 nanotubes on silicon-on-insulator (SOI) substrate have been successfully fabricated and characterized. The vertical SiO 2 nanotubes with a smooth cavity are built from Si nanowires which were epitaxially grown on the SOI substrate. The nanotubes have rigid, dry-oxidized SiO 2 walls with precisely controlled nanotube inner diameter, which is very attractive for chemical-/bio-sensing applications. No dispersion/aligning procedures were involved in the nanotube fabrication and integration by using this technology, enabling a clean and smooth chemical cell. Such a robust and well-controlled nanotube is an excellent case of developing functional nanomaterials by leveraging the strength of top-down lithography and the unique advantage of bottom-up growth. These solid, smooth, clean SiO 2 nanotubes and nanofluidic devices are very encouraging and attractive in future bio-medical applications, such as single molecule sensing and DNA sequencing.

Novel nanofluidic chemical cells based on self-assembled solid-state SiO2 nanotubes

NASA Astrophysics Data System (ADS)

Zhu, Hao; Li, Haitao; Robertson, Joseph W. F.; Balijepalli, Arvind; Krylyuk, Sergiy; Davydov, Albert V.; Kasianowicz, John J.; Suehle, John S.; Li, Qiliang

2017-10-01

Novel nanofluidic chemical cells based on self-assembled solid-state SiO2 nanotubes on silicon-on-insulator (SOI) substrate have been successfully fabricated and characterized. The vertical SiO2 nanotubes with a smooth cavity are built from Si nanowires which were epitaxially grown on the SOI substrate. The nanotubes have rigid, dry-oxidized SiO2 walls with precisely controlled nanotube inner diameter, which is very attractive for chemical-/bio-sensing applications. No dispersion/aligning procedures were involved in the nanotube fabrication and integration by using this technology, enabling a clean and smooth chemical cell. Such a robust and well-controlled nanotube is an excellent case of developing functional nanomaterials by leveraging the strength of top-down lithography and the unique advantage of bottom-up growth. These solid, smooth, clean SiO2 nanotubes and nanofluidic devices are very encouraging and attractive in future bio-medical applications, such as single molecule sensing and DNA sequencing.

Fabrication Characterization of Solar-Cell Silicon Wafers Using a Circular-Rhombus Tool

NASA Astrophysics Data System (ADS)

Pa, Pai-Shan

2010-01-01

A new recycling fabrication method using a custom-built designed circular-rhombus tool for a process combining of micro-electroetching and electrochemical machining for removal of the surface layers from silicon wafers of solar cells is demonstrated. The low yields of epoxy film and Si3N4 thin-film depositions are important factors in semiconductor production. The aim of the proposed recycling fabrication method is to replace the current approach, which uses strong acid and grinding and may damage the physical structure of silicon wafers and pollute to the environment. A precisely engineered clean production approach for removal of surface microstructure layers from silicon wafers is to develop a mass production system for recycling defective or discarded silicon wafers of solar cells that can reduce pollution and cost. A large diameter cathode of the circular-rhombus tool (with a small gap between the anode and the cathode) corresponds to a high rate of epoxy film removal. A high feed rate of the silicon wafers combined with a high continuous DC electric voltage results in a high removal rate. The high rotational speed of the circular-rhombus tool increases the discharge mobility and improves the removal effect associated with the high feed rate of the workpiece. A small port radius or large end angle of the rhombus anode provides a large discharge space and good removal effect only a short period of time is required to remove the Si3N4 layer and epoxy film easily and cleanly.

Multifunctional hollow superhydrophobic SiO2 microspheres with robust and self-cleaning and separation of oil/water emulsions properties.

PubMed

Guo, Fei; Wen, Qiuying; Peng, Yubing; Guo, Zhiguang

2017-05-15

Superhydrophobic materials have drawn great attention due to its' remarkable non-wetting properties and applications in many fields. In this paper, we synthesize a hollow superhydrophobic SiO 2 powder by typical template method and self-assembly functionalization. Robustness of many superhydrophobic surfaces has become the development bottleneck for industrial applications. Aiming at this problem, the adhesive epoxy resin is specially taken to use as the binding layer between superhydrophobic SiO 2 powder and substrates to create robust superhydrophobic coating. The mechanical durability of the obtained superhydrophobic coating is evaluated by a cyclic sandpaper abrasion. Also, the chemical stability of this superhydrophobic coating is assessed by exposuring it to different pH conditions and UV irradiation, respectively. Significantly, because of the special structure and superhydrophobicity/superoleophilicity of the hollow microspheres, these hollow superhydrophobic SiO 2 powders manifest great oil-adsorbing capacity, which thus can be used to separate oil/water mixtures and remove oil from oil-in-water emulsions. Copyright © 2017 Elsevier Inc. All rights reserved.

CIP (cleaning-in-place) stability of AlGaN/GaN pH sensors.

PubMed

Linkohr, St; Pletschen, W; Schwarz, S U; Anzt, J; Cimalla, V; Ambacher, O

2013-02-20

The CIP stability of pH sensitive ion-sensitive field-effect transistors based on AlGaN/GaN heterostructures was investigated. For epitaxial AlGaN/GaN films with high structural quality, CIP tests did not degrade the sensor surface and pH sensitivities of 55-58 mV/pH were achieved. Several different passivation schemes based on SiO(x), SiN(x), AlN, and nanocrystalline diamond were compared with special attention given to compatibility to standard microelectronic device technologies as well as biocompatibility of the passivation films. The CIP stability was evaluated with a main focus on the morphological stability. All stacks containing a SiO₂ or an AlN layer were etched by the NaOH solution in the CIP process. Reliable passivations withstanding the NaOH solution were provided by stacks of ICP-CVD grown and sputtered SiN(x) as well as diamond reinforced passivations. Drift levels about 0.001 pH/h and stable sensitivity over several CIP cycles were achieved for optimized sensor structures. Copyright © 2012 Elsevier B.V. All rights reserved.

Fabrication of nanometer single crystal metallic CoSi2 structures on Si

NASA Technical Reports Server (NTRS)

Nieh, Kai-Wei (Inventor); Lin, True-Lon (Inventor); Fathauer, Robert W. (Inventor)

1991-01-01

Amorphous Co:Si (1:2 ratio) films are electron gun-evaporated on clean Si(111), such as in a molecular beam epitaxy system. These layers are then crystallized selectively with a focused electron beam to form very small crystalline Co/Si2 regions in an amorphous matrix. Finally, the amorphous regions are etched away selectively using plasma or chemical techniques.

Isolation and Versatile Derivatization of an Unsaturated Anionic Silicon Cluster (Siliconoid)

PubMed Central

Willmes, Philipp; Leszczyńska, Kinga; Heider, Yannic; Abersfelder, Kai; Zimmer, Michael; Huch, Volker

2016-01-01

Abstract The characteristic features of bulk silicon surfaces are echoed in the related partially substituted—and thus unsaturated—neutral silicon clusters (siliconoids). The incorporation of siliconoids into more‐extended frameworks is promising owing to their unique electronic features, but further developments in this regard are limited by the notable absence of functionalized siliconoid derivatives until now. Herein we report the isolation and full characterization of the lithium salt of an anionic R5Si6‐siliconoid, thus providing the missing link between silicon‐based Zintl anions and siliconoid clusters. Proof‐of‐principle for the high potential of this species for the efficient transfer of the intact unsaturated R5Si6 moiety is demonstrated by clean reactions with representative electrophiles of Groups 13, 14, and 15. PMID:26800440

Absence of molecular slip on ultraclean and SAM-coated surfaces

NASA Astrophysics Data System (ADS)

Pye, Justin; Wood, Clay; Burton, Justin

2016-11-01

The liquid/solid boundary condition is a complex problem that is becoming increasingly important for the development of nanoscale fluidic devices. Many groups have now measured slip near an interface at nanoscale dimensions using a variety of experimental techniques. In simple systems, large slip lengths are generally measured for non-wetting liquid/solid combinations, but many conflicting measurements and interpretations remain. We have developed a novel pseudo-differential technique using a quartz crystal microbalance (QCM) to measure slip lengths on various surfaces. A drop of one liquid is grown on the QCM in the presence of a second, ambient liquid. We have isolated any anomalous boundary effects such as interfacial slip by choosing two liquids which have identical bulk effects on the QCM frequency and dissipation in the presence of no-slip. Slip lengths are -less than 2 nm- for water (relative to undecane) on all surfaces measured, including plasma cleaned gold, SiO2, and two different self assembled monolayers (SAMs), regardless of contact angle. We also find that surface cleanliness is crucial to accurately measure slip lengths. Additionally, clean glass substrates appear to have a significant adsorbed water layer and SAM surfaces show excess dissipation, possibly associated with contact line motion. In addition to investigating other liquid pairs, future work will include extending this technique to surfaces with independently controllable chemistry and roughness, both of which are known to strongly affect interfacial hydrodynamics.

Surface texture and composition of titanium brushed with toothpaste slurries of different pHs.

PubMed

Hossain, Awlad; Okawa, Seigo; Miyakawa, Osamu

2007-02-01

This in vitro study characterized the surface texture and composition of titanium brushed with toothpaste slurries of different pHs, and thereby elucidated mechanochemical interactions between the metal and abrasive material in dentifrice. Two fluoride-free toothpastes, which contained crystalline CaHPO(4).2H(2)O and amorphous SiO(2) particles as abrasive, were mixed with acidic buffers to provide slurries of pH 6.8 and 4.8. Specimens were cast from CP Ti, mirror-polished, and then toothbrushed at 120strokes/min for 350,400 strokes under a load of 2.45N. Specimen surfaces were characterized by means of SPM and EPMA. The obtained data were compared with the already reported results of water-diluted alkaline slurries. SPM data of each paste were analyzed using one-way ANOVA, followed by post hoc Tukey test. Irrespective of toothpaste, neutral slurries, as with alkaline slurries, yielded a chemically altered surface with rough texture, whereas acidic slurries formed a chemically clean surface with relatively smooth texture. Mechanochemical polishing effect might be mainly responsible for the cleanness and smoothness. Acidic slurry-induced smooth surface may minimize plaque formation. However, the augmentation of released titanium ions may be adverse to the human body. For evaluation of toothpaste abrasion effects on titanium, paste slurry pH should be taken into account.

Large Block Copolymer Self-Assembly for Fabrication of Subwavelength Nanostructures for Applications in Optics.

PubMed

Mokarian-Tabari, Parvaneh; Senthamaraikannan, Ramsankar; Glynn, Colm; Collins, Timothy W; Cummins, Cian; Nugent, David; O'Dwyer, Colm; Morris, Michael A

2017-05-10

Nanostructured surfaces are common in nature and exhibit properties such as antireflectivity (moth eyes), self-cleaning (lotus leaf), iridescent colors (butterfly wings), and water harvesting (desert beetles). We now understand such properties and can mimic some of these natural structures in the laboratory. However, these synthetic structures are limited since they are not easily mass produced over large areas due to the limited scalability of current technologies such as UV-lithography, the high cost of infrastructure, and the difficulty in nonplanar surfaces. Here, we report a solution process based on block copolymer (BCP) self-assembly to fabricate subwavelength structures on large areas of optical and curved surfaces with feature sizes and spacings designed to efficiently scatter visible light. Si nanopillars (SiNPs) with diameters of ∼115 ± 19 nm, periodicity of 180 ± 18 nm, and aspect ratio of 2-15 show a reduction in reflectivity by a factor of 100, <0.16% between 400 and 900 nm at an angle of incidence of 30°. Significantly, the reflectivity remains below 1.75% up to incident angles of 75°. Modeling the efficiency of a SiNP PV suggests a 24.6% increase in efficiency, representing a 3.52% (absolute) or 16.7% (relative) increase in electrical energy output from the PV system compared to AR-coated device.

Exploring surface cleaning strategies in hospital to prevent contact transmission of methicillin-resistant Staphylococcus aureus.

PubMed

Lei, Hao; Jones, Rachael M; Li, Yuguo

2017-01-18

Cleaning of environmental surfaces in hospitals is important for the control of methicillin-resistant Staphylococcus aureus (MRSA) and other hospital-acquired infections transmitted by the contact route. Guidance regarding the best approaches for cleaning, however, is limited. In this study, a mathematical model based on ordinary differential equations was constructed to study MRSA concentration dynamics on high-touch and low-touch surfaces, and on the hands and noses of two patients (in two hospitals rooms) and a health care worker in a hypothetical hospital environment. Two cleaning interventions - whole room cleaning and wipe cleaning of touched surfaces - were considered. The performance of the cleaning interventions was indicated by a reduction in MRSA on the nose of a susceptible patient, relative to no intervention. Whole room cleaning just before first patient care activities of the day was more effective than whole room cleaning at other times, but even with 100% efficiency, whole room cleaning only reduced the number of MRSA transmitted to the susceptible patient by 54%. Frequent wipe cleaning of touched surfaces was shown to be more effective that whole room cleaning because surfaces are rapidly re-contaminated with MRSA after cleaning. Wipe cleaning high-touch surfaces was more effective than wipe cleaning low-touch surfaces for the same frequency of cleaning. For low wipe cleaning frequency (≤3 times per hour), high-touch surfaces should be targeted, but for high wipe cleaning frequency (>3 times per hour), cleaning should target high- and low-touch surfaces in proportion to the surface touch frequency. This study reproduces the observations from a field study of room cleaning, which provides support for the validity of our findings. Daily whole room cleaning, even with 100% cleaning efficiency, provides limited reduction in the number of MRSA transmitted to susceptible patients via the contact route; and should be supplemented with frequent targeted cleaning of high-touch surfaces, such as by a wipe or cloth containing disinfectant.

Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED

PubMed Central

2011-01-01

The Si(001) surface deoxidized by short annealing at T ~ 925°C in the ultrahigh vacuum molecuar beam epitaxy chamber has been in situ investigated using high-resolution scanning tunneling microscopy (STM)and redegreesected high-energy electron diffraction (RHEED. RHEED patterns corresponding to (2 × 1) and (4 × 4) structures were observed during sample treatment. The (4 × 4) reconstruction arose at T ≲ 600°C after annealing. The reconstruction was observed to be reversible: the (4 × 4) structure turned into the (2 × 1) one at T ≳ 600°C, the (4 × 4) structure appeared again at recurring cooling. The c(8 × 8) reconstruction was revealed by STM at room temperature on the same samples. A fraction of the surface area covered by the c(8 × 8) structure decreased, as the sample cooling rate was reduced. The (2 × 1) structure was observed on the surface free of the c(8 × 8) one. The c(8 × 8) structure has been evidenced to manifest itself as the (4 × 4) one in the RHEED patterns. A model of the c(8 × 8) structure formation has been built on the basis of the STM data. Origin of the high-order structure on the Si(001) surface and its connection with the epinucleation phenomenon are discussed. PACS 68.35.B-·68.37.Ef·68.49.Jk·68.47.Fg PMID:21711733

Self-Cleaning Anticondensing Glass via Supersonic Spraying of Silver Nanowires, Silica, and Polystyrene Nanoparticles.

PubMed

Lee, Jong-Gun; An, Seongpil; Kim, Tae-Gun; Kim, Min-Woo; Jo, Hong-Seok; Swihart, Mark T; Yarin, Alexander L; Yoon, Sam S

2017-10-11

We have sequentially deposited layers of silver nanowires (AgNWs), silicon dioxide (SiO 2 ) nanoparticles, and polystyrene (PS) nanoparticles on uncoated glass by a rapid low-cost supersonic spraying method to create antifrosting, anticondensation, and self-cleaning glass. The conductive silver nanowire network embedded in the coating allows electrical heating of the glass surface. Supersonic spraying is a single-step coating technique that does not require vacuum. The fabricated multifunctional glass was characterized by X-ray diffraction analysis (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), ultraviolet-visible spectroscopy, and transmission electron microscopy (TEM). The thermal insulation and antifrosting performance were demonstrated using infrared thermal imaging. The reliability of the electrical heating function was tested through extensive cycling. This transparent multifunctional coating holds great promise for use in various smart window designs.

LaAlO{sub 3}/Si capacitors: Comparison of different molecular beam deposition conditions and their impact on electrical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pelloquin, Sylvain; Baboux, Nicolas; Albertini, David

2013-01-21

A study of the structural and electrical properties of amorphous LaAlO{sub 3} (LAO)/Si thin films fabricated by molecular beam deposition (MBD) is presented. Two substrate preparation procedures have been explored namely a high temperature substrate preparation technique-leading to a step and terraces surface morphology-and a chemical HF-based surface cleaning. The LAO deposition conditions were improved by introducing atomic plasma-prepared oxygen instead of classical molecular O{sub 2} in the chamber. An Au/Ni stack was used as the top electrode for its electrical characteristics. The physico-chemical properties (surface topography, thickness homogeneity, LAO/Si interface quality) and electrical performance (capacitance and current versus voltagemore » and TunA current topography) of the samples were systematically evaluated. Deposition conditions (substrate temperature of 550 Degree-Sign C, oxygen partial pressure settled at 10{sup -6} Torr, and 550 W of power applied to the O{sub 2} plasma) and post-depositions treatments were investigated to optimize the dielectric constant ({kappa}) and leakage currents density (J{sub Gate} at Double-Vertical-Line V{sub Gate} Double-Vertical-Line = Double-Vertical-Line V{sub FB}- 1 Double-Vertical-Line ). In the best reproducible conditions, we obtained a LAO/Si layer with a dielectric constant of 16, an equivalent oxide thickness of 8.7 A, and J{sub Gate} Almost-Equal-To 10{sup -2}A/cm{sup 2}. This confirms the importance of LaAlO{sub 3} as an alternative high-{kappa} for ITRS sub-22 nm technology node.« less

New intelligent multifunctional SiO2/VO2 composite films with enhanced infrared light regulation performance, solar modulation capability, and superhydrophobicity

NASA Astrophysics Data System (ADS)

Wang, Chao; Zhao, Li; Liang, Zihui; Dong, Binghai; Wan, Li; Wang, Shimin

2017-12-01

Highly transparent, energy-saving, and superhydrophobic nanostructured SiO2/VO2 composite films have been fabricated using a sol-gel method. These composite films are composed of an underlying infrared (IR)-regulating VO2 layer and a top protective layer that consists of SiO2 nanoparticles. Experimental results showed that the composite structure could enhance the IR light regulation performance, solar modulation capability, and hydrophobicity of the pristine VO2 layer. The transmittance of the composite films in visible region (Tlum) was higher than 60%, which was sufficient to meet the requirements of glass lighting. Compared with pristine VO2 films and tungsten-doped VO2 film, the near IR control capability of the composite films was enhanced by 13.9% and 22.1%, respectively, whereas their solar modulation capability was enhanced by 10.9% and 22.9%, respectively. The water contact angles of the SiO2/VO2 composite films were over 150°, indicating superhydrophobicity. The transparent superhydrophobic surface exhibited a high stability toward illumination as all the films retained their initial superhydrophobicity even after exposure to 365 nm light with an intensity of 160 mW.cm-2 for 10 h. In addition, the films possessed anti-oxidation and anti-acid properties. These characteristics are highly advantageous for intelligent windows or solar cell applications, given that they can provide surfaces with anti-fogging, rainproofing, and self-cleaning effects. Our technique offers a simple and low-cost solution to the development of stable and visible light transparent superhydrophobic surfaces for industrial applications.

Tunneling Spectroscopy of Chemically Treated Surfaces of GaAs(001)

NASA Astrophysics Data System (ADS)

Fan, Jia-Fa; Tokumoto, Hiroshi

1996-03-01

Effect of surface chemical treatment on the surface electronic properties of GaAs(001) was studied by tunneling spectroscopy. Samples of highly-Si-doped GaAs were first cleaned and etched using conventional processes, then soaked in aqueous solutions of (NH_4)_2Sx and/or NH_4F for few hours, and finally rinsed in ethanol. The constant separation spectroscopy was done under pure N2 ambient at room temperature (295K) with our scanning tunneling microscope (STM). As a result, the sulfide treament lead to electron tunnelings starting typically at the sample voltages of -0.50 V and 0.90 V at initial settings of 1.50 V and 0.20 nA. For etched-only surface, however, the starting voltages were -0.70 V and 0.70 V. Effects of heating, laser-irradiation, and the fluoride treatment will be presented. Also, the mechanism of the shift of the surface Fermi level will be discussed.

Effects of a Ta interlayer on the phase transition of TiSi2 on Si(111)

NASA Astrophysics Data System (ADS)

Jeon, Hyeongtag; Jung, Bokhee; Kim, Young Do; Yang, Woochul; Nemanich, R. J.

2000-09-01

This study examines the effects of a thin Ta interlayer on the formation of TiSi2 on Si(111) substrate. The Ta interlayer was introduced by depositing Ta and Ti films sequentially on an atomically clean Si(111) substrate in an ultrahigh vacuum (UHV) system. Samples of 100 Å Ti with 5 and 10 Å Ta interlayers were compared to similar structures without an interlayer. After deposition, the substrates were annealed for 10 min, in situ, at temperatures between 500 and 750 °C in 50 °C increments. The TiSi2 formation with and without the Ta interlayer was analyzed with an X-ray diffractometer, Auger electron spectroscopy (AES), Scanning electron microscopy (SEM), transmission electron microscopy (TEM), and a four-point probe. The AES analysis data showed a 1:2 ratio of Ti:Si in the Ti-silicide layer and indicated that the Ta layer remained at the interface between TiSi2 and the Si(111) substrate. The C 49-C 54 TiSi2 phase transition temperature was lowered by ˜200 °C. The C 49-C 54 TiSi2 phase transition temperature was 550 °C for the samples with a Ta interlayer and was 750 °C for the samples with no Ta interlayer. The sheet resistance of the Ta interlayered Ti silicide showed lower values of resistivity at low temperatures which indicated the change in phase transition temperature. The C 54 TiSi2 displayed different crystal orientation when the Ta interlayer was employed. The SEM and TEM micrographs showed that the TiSi2 with a Ta interlayer significantly suppressed the tendency to islanding and surface agglomeration.

Cleaning at the Edge of Science: NASA's Genesis Mission

NASA Technical Reports Server (NTRS)

Stansbery, Eileen K.; Biesinger, Paul H.

2000-01-01

As part of NASA's continuing exploration of the origins of our solar system, the California Institute of Technology, Jet Propulsion Laboratory, Lockheed Martin Astronautics, Los Alamos National Laboratory, and the Johnson Space Center are working together to develop the Genesis mission to return solar matter for analysis in terrestrial laboratories. These samples will be used to define a baseline for the chemical and isotopic composition of the solar nebula. Deviations from the baseline resulted as the solar system evolved; thus, providing a tracer for materials incorporated into meteorites, comets and planetary bodies. These differences represent "fossil residues" that provide invaluable insight into how the solar nebula evolved to form the planets. We cannot collect a sample of the Sun as we would for a planet; fortunately, solar material comes to us in the form of the solar wind. Ultrapure materials will be exposed at the Earth-Sun L1, outside the Earth's magnetic influence, where solar wind nuclei will be captured for 2 years before returning to Earth in January 2001. The key challenge to obtaining a good sample of solar wind, uncontaminated by terrestrial atoms, is a clean collection surface in a clean sample canister and clean facilities with which to handle the samples for allocation and future reference. The Johnson Space Center QSQ is responsible for contamination control for the mission, for ensuring the cleanliness of collection surfaces and providing a clean environment for their subsequent handling. The level of cleanliness required is high; at the time of analysis (after sample return), the surface contamination by C, N, O must each be less than 10(exp 15) atoms per centimeter squared and for elements other than C, N, O, the number of atoms per centimeter squared of each surface contaminant shall not exceed the estimated solar wind fluence of the species (varies by element between U at approx. 10 (exp 4) atoms per centimeter squared to Fe, Si, Mg, and Ne at approx. 10(exp 12), atoms per centimeter squared). Typical spacecraft assembly is done in class 10,000 cleanrooms. The final cleaning and reintegration of the Genesis payload canister as well as all sample material handling will be done within a class 10 cleanroom using Dryden suits to protect the collector materials from any human debris. Each component is unique, no standard size, shape, material, or precleaning history. We are developing new final cleaning techniques utilizing ultra-pure water to minimize molecular residues on the hardware components.

Mouse Cleaning Apparatus and Method

NASA Technical Reports Server (NTRS)

Williams, Glenn L. (Inventor)

2005-01-01

The method of using the mouse pad cleaning apparatus is disclosed and claimed. The method comprises the steps of uncovering the mouse cleaning surface, applying the mouse and ball of the mouse to the cleaning surface, moving the mouse in a rotational pattern on the mouse cleaning surface, removing the mouse form the mouse cleaning surface, washing the cleaning surface, and covering the mouse cleaning surface. A mouse pad cleaning apparatus comprising a plurality of substrates, each said substrate having adhesive thereon, said plurality of substrates residing in and affixed to a receptacle. A single substrate having adhesive, which may be washable or non-washable, thereon may be employed. The washable adhesive may be an organopolysiloxane or gelatinous elastomer.

As-Received, Ozone Cleaned and Ar+ Sputtered Surfaces of Hafnium Oxide Grown by Atomic Layer Deposition and Studied by XPS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Engelhard, Mark H.; Herman, Jacob A.; Wallace, Robert

2012-06-27

In this study, X-ray photoelectron spectroscopy (XPS) characterization was performed on 47 nm thick hafnium oxide (HfO{sub 2}) films grown by atomic layer deposition using TEMA-Hf/H{sub 2}O at 250 C substrate temperature. HfO{sub 2} is currently being studied as a possible replacement for Silicon Oxide (SiO{sub 2}) as a gate dielectric in electronics transistors. XPS spectra were collected on a Physical Electronics Quantum 2000 Scanning ESCA Microprobe using a monochromatic Al K{sub a} X-ray (1486.7 eV) excitation source. The sample was analyzed under the following conditions: as received, after UV irradiation for five minutes, and after sputter cleaning with 2more » kV Ar{sup +} ions for 180 seconds. Survey scans showed carbon, oxygen, and hafnium as the major species in the film, while the only minor species of argon and carbide was detected after sputtering. Adventitious carbon initially composed approximately 18.6 AT% of the surface, but after UV cleaning it was reduced to 2.4 AT%. This demonstrated that that the majority of carbon was due to adventitious carbon. However, after 2 kV Ar{sup +} sputtering there was still only trace amounts of carbon at {approx}1 AT%, Some of this trace carbon is now in the form of a carbide due to the interaction with Ar{sup +} used for sputter cleaning. Furthermore, the stoiciometric ratio of oxygen and hafnium is consistent with a high quality HfO{sub 2} film.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hua, Xin; Yu, Xiao-Ying; Wang, Zhaoying

The first results of using a novel single channel microfluidic reactor to enable Shewanella biofilm growth and in situ characterization using time-of-flight secondary ion mass spectrometry (ToF-SIMS) in the hydrated environment are presented. The new microfluidic interface allows direct probing of the liquid surface using ToF-SIMS, a vacuum surface technique. The detection window is an aperture of 2 m in diameter on a thin silicon nitride (SiN) membrane and it allows direct detection of the liquid surface. Surface tension of the liquid flowing inside the microchannel holds the liquid within the aperture. ToF-SIMS depth profiling was used to drill throughmore » the SiN membrane and the biofilm grown on the substrate. In situ 2D imaging of the biofilm in hydrated state was acquired, providing spatial distribution of the chemical compounds in the biofilm system. This data was compared with a medium filled microfluidic reactor devoid of biofilm and dried biofilm samples deposited on clean silicon wafers. Principle Component Analysis (PCA) was used to investigate these observations. Our results show that imaging biofilms in the hydrated environment using ToF-SIMS is possible using the unique microfluidic reactor. Moreover, characteristic biofilm fatty acids fragments were observed in the hydrated biofilm grown in the microfluidic channel, illustrating the advantage of imaging biofilm in its native environment.« less

Robust and underwater superoleophobic coating with excellent corrosion and biofouling resistance in harsh environments

NASA Astrophysics Data System (ADS)

Su, Mingji; Liu, Yong; Zhang, Yuhong; Wang, Zhiguo; Li, Yulin; He, Peixin

2018-04-01

Underwater superoleophobic surfaces are based on the surface with micro-/nanoscale roughness and hydration layer. But the self-cleaning surfaces are usually mechanically weak and will lose their underwater superoleophobicity when the surfaces are corroded or damaged. In this paper, to overcome these problems, the robust underwater superoleophobic coating (HN/ER-coating) has been fabricated successfully through MPS (methacryloxy propyl trimethoxyl silane)-SiO2/PNIPAM (N-isopropylacryamide) hybrid nanoparticles and epoxy resin (ER) via a simple solution-casting method. The SiO2/PNIPAM hybrid nanoparticles can enhance multiscale roughness and excellent abrasion-resistant property, and the epoxy resin can be used as an interlayer between hybrid nanoparticles and substrates to promote the robustness and corrosion resistance of the coating. The obtained coatings have excellent underwater superoleophobicity, and exhibit highly stability in harsh environments (including acid-base, strong ionic strength, mechanical abrasion). Moreover, this coating can provide protective effect on the substrate in corrosive solution, and may also resist bacterial attachment and subsequent biofilm formation because of the presence of high density PNIPAM polymers. Herein, the developed underwater superoleophobic coating can be applied as an effective platform for the applications in underwater instruments, underwater oil transport, marine oil platform and ships.

Colloidal and electrochemical aspects of copper-CMP

NASA Astrophysics Data System (ADS)

Sun, Yuxia

Copper based interconnects with low dielectric constant layers are currently used to increase interconnect densities and reduce interconnect time delays in integrated circuits. The technology used to develop copper interconnects involves Chemical Mechanical Planarization (CMP) of copper films deposited on low-k layers (silica or silica based films), which is carried out using slurries containing abrasive particles. One issue using such a structure is copper contamination over dielectric layers (SiO2 film), if not reduced, this contamination will cause current leakage. In this study, the conditions conducive to copper contamination onto SiO2 films during Cu-CMP process were studied, and a post-CMP cleaning technique was discussed based on experimental results. It was found that the adsorption of copper onto a silica surface is kinetically fast (<0.5 minute). The amount of copper absorbed is pH and concentration dependent and affected by presence of H2O2, complexing agents, and copper corrosion inhibitor Benzotrazole. Based on de-sorption results, DI water alone was unable to reduce adsorbed copper to an acceptable level, especially for adsorption that takes place at a higher pH condition. The addition of complex agent, citric acid, proved effective in suppressing copper adsorption onto oxide silica during polishing or post-CMP cleaning by forming stable copper-CA complexes. Surface Complexation Modeling was used to simulate copper adsorption isotherms and predict the copper contamination levels on SiO2 surfaces. Another issue with the application of copper CMP is its environmental impact. CMP is a costly process due to its huge consumption of pure water and slurry. Additionally, Cu-CMP processing generates a waste stream containing certain amounts of copper and abrasive slurry particles. In this study, the separation technique electrocoagulation was investigated to remove both copper and abrasive slurry particles simultaneously. For effluent containing ˜40 ppm dissolved copper, it was found that ˜90% dissolved copper was removed from the waste streams through electroplating and in-situ chemical precipitation. The amount of copper removed through plating is impacted by membrane surface charge, type/amount of complexing agents, and solid content in the slurry suspension. The slurry particles can be removed ˜90% within 2 hours of EC through multiple mechanisms.

Low-Temperature Silicon Epitaxy by Remote, Plasma - Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Habermehl, Scott Dwight

The dynamics of low temperature Si homoepitaxial and heteroepitaxial growth, by remote plasma enhanced chemical vapor deposition, RPECVD, have been investigated. For the critical step of pre-deposition surface preparation of Si(100) surfaces, the attributes of remote plasma generated atomic H are compared to results obtained with a rapid thermal desorption, RTD, technique and a hybrid H-plasma/RTD technique. Auger electron spectroscopy, AES, and electron diffraction analysis indicate the hybrid technique to be very effective at surface passivation, while the RTD process promotes the formation of SiC precipitates, which induce defective epitaxial growth. For GaP and GaAs substrates, the use of atomic H exposure is investigated as a surface passivation technique. AES shows this technique to be effective at producing atomically clean surfaces. For processing at 400^circrm C, the GaAs(100) surface is observed to reconstruct to a c(8 x 2)Ga symmetry while, at 530^ circrm C the vicinal GaP(100) surface, miscut 10^circ , is observed to reconstruct to a (1 x n) type symmetry; an unreconstructed (1 x 1) symmetry is observed for GaP(111). Differences in the efficiency with which native oxides are removed from the surface are attributed to variations in the local atomic bonding order of group V oxides. The microstructure of homoepitaxial Si films, deposited at temperatures of 25-450^circ rm C and pressures of 50-500 mTorr, is catalogued. Optimized conditions for the deposition of low defect, single crystal films are identified. The existence of two pressure dependent regimes for process activation are observed. In-situ mass spectral analysis indicates that the plasma afterglow is dominated by monosilane ions below 200 mTorr, while above 200 mTorr, low mass rm H_{x} ^+ (x = 1,2,3) and rm HHe^+ ions dominate. Consideration of the growth rate data indicates that downstream dissociative silane ionization, in the lower pressure regime, is responsible for an enhanced surface H abstraction rate. The observed increase in growth rate is concluded to be a manifestation of increased deposition site activation, resulting from the enhanced H abstraction mechanism. Secondary ion mass spectrometry measurements, of H incorporation in the Si films, yield an "effective" activation energy for the abstraction of surface H. A shift in the activation energy between 50 mTorr (0.7 eV) and 500 mTorr (0.3 eV) supports the conclusions for an ion-induced H abstraction mechanism. From this, a chemical sputtering reaction is proposed, whereby impinging ions react with chemisorbed H to form volatile species. Heteroepitaxial Si thin films are deposited upon GaP and GaAs surfaces. AES is used to evaluate the growth mode of Si on GaP(111) and vicinal GaP(100). In both instances, the data indicates a modified layer-plus-island growth mechanism, with possible interfacial alloy mixing. High quality epitaxial growth is observed to proceed on vicinal GaP(100) surfaces beyond the predicted critical thickness for strain relief of 140 A. For GaP(111), defective structures are observed well below the predicted critical thickness. This discrepancy is attributed to low precursor surface diffusion kinetics that are accommodated by the presence of steps on the vicinal surface. For deposition of Si on GaAs(100), disordered structure is observed within the first few monolayers of growth, which is in agreement with the predicted critical thickness for this system of approximately 10 A.

Determination of total fluoride in HF/HNO3/H2SiF6 etch solutions by new potentiometric titration methods.

PubMed

Weinreich, Wenke; Acker, Jörg; Gräber, Iris

2007-03-30

In the photovoltaic industry the etching of silicon in HF/HNO(3) solutions is a decisive process for cleaning wafer surfaces or to produce certain surface morphologies like polishing or texturization. With regard to cost efficiency, a maximal utilisation of etch baths in combination with highest quality and accuracy is strived. To provide an etch bath control realised by a replenishment with concentrated acids the main constituents of these HF/HNO(3) etch solutions including the reaction product H(2)SiF(6) have to be analysed. Two new methods for the determination of the total fluoride content in an acidic etch solution based on the precipitation titration with La(NO(3))(3) are presented within this paper. The first method bases on the proper choice of the reaction conditions, since free fluoride ions have to be liberated from HF and H(2)SiF(6) at the same time to be detected by a fluoride ion-selective electrode (F-ISE). Therefore, the sample is adjusted to a pH of 8 for total cleavage of the SiF(6)(2-) anion and titrated in absence of buffers. In a second method, the titration with La(NO(3))(3) is followed by a change of the pH-value using a HF resistant glass-electrode. Both methods provide consistent values, whereas the analysis is fast and accurate, and thus, applicable for industrial process control.

New intelligent multifunctional SiO2/VO2 composite films with enhanced infrared light regulation performance, solar modulation capability, and superhydrophobicity.

PubMed

Wang, Chao; Zhao, Li; Liang, Zihui; Dong, Binghai; Wan, Li; Wang, Shimin

2017-01-01

Highly transparent, energy-saving, and superhydrophobic nanostructured SiO 2 /VO 2 composite films have been fabricated using a sol-gel method. These composite films are composed of an underlying infrared (IR)-regulating VO 2 layer and a top protective layer that consists of SiO 2 nanoparticles. Experimental results showed that the composite structure could enhance the IR light regulation performance, solar modulation capability, and hydrophobicity of the pristine VO 2 layer. The transmittance of the composite films in visible region ( T lum ) was higher than 60%, which was sufficient to meet the requirements of glass lighting. Compared with pristine VO 2 films and tungsten-doped VO 2 film, the near IR control capability of the composite films was enhanced by 13.9% and 22.1%, respectively, whereas their solar modulation capability was enhanced by 10.9% and 22.9%, respectively. The water contact angles of the SiO 2 /VO 2 composite films were over 150°, indicating superhydrophobicity. The transparent superhydrophobic surface exhibited a high stability toward illumination as all the films retained their initial superhydrophobicity even after exposure to 365 nm light with an intensity of 160 mW . cm -2 for 10 h. In addition, the films possessed anti-oxidation and anti-acid properties. These characteristics are highly advantageous for intelligent windows or solar cell applications, given that they can provide surfaces with anti-fogging, rainproofing, and self-cleaning effects. Our technique offers a simple and low-cost solution to the development of stable and visible light transparent superhydrophobic surfaces for industrial applications.

New intelligent multifunctional SiO2/VO2 composite films with enhanced infrared light regulation performance, solar modulation capability, and superhydrophobicity

PubMed Central

Wang, Chao; Zhao, Li; Liang, Zihui; Dong, Binghai; Wan, Li; Wang, Shimin

2017-01-01

Abstract Highly transparent, energy-saving, and superhydrophobic nanostructured SiO2/VO2 composite films have been fabricated using a sol–gel method. These composite films are composed of an underlying infrared (IR)-regulating VO2 layer and a top protective layer that consists of SiO2 nanoparticles. Experimental results showed that the composite structure could enhance the IR light regulation performance, solar modulation capability, and hydrophobicity of the pristine VO2 layer. The transmittance of the composite films in visible region (T lum) was higher than 60%, which was sufficient to meet the requirements of glass lighting. Compared with pristine VO2 films and tungsten-doped VO2 film, the near IR control capability of the composite films was enhanced by 13.9% and 22.1%, respectively, whereas their solar modulation capability was enhanced by 10.9% and 22.9%, respectively. The water contact angles of the SiO2/VO2 composite films were over 150°, indicating superhydrophobicity. The transparent superhydrophobic surface exhibited a high stability toward illumination as all the films retained their initial superhydrophobicity even after exposure to 365 nm light with an intensity of 160 mW.cm−2 for 10 h. In addition, the films possessed anti-oxidation and anti-acid properties. These characteristics are highly advantageous for intelligent windows or solar cell applications, given that they can provide surfaces with anti-fogging, rainproofing, and self-cleaning effects. Our technique offers a simple and low-cost solution to the development of stable and visible light transparent superhydrophobic surfaces for industrial applications. PMID:28970866

High quality and uniformity GaN grown on 150 mm Si substrate using in-situ NH3 pulse flow cleaning process

NASA Astrophysics Data System (ADS)

Ji, Panfeng; Yang, Xuelin; Feng, Yuxia; Cheng, Jianpeng; Zhang, Jie; Hu, Anqi; Song, Chunyan; Wu, Shan; Shen, Jianfei; Tang, Jun; Tao, Chun; Pan, Yaobo; Wang, Xinqiang; Shen, Bo

2017-04-01

By using in-situ NH3 pulse flow cleaning method, we have achieved the repeated growth of high quality and uniformity GaN and AlGaN/GaN high electron mobility transistors (HEMTs) on 150 mm Si substrate. The two dimensional electron gas (2DEG) mobility is 2200 cm2/Vs with an electron density of 7.3 × 1012 cm-2. The sheet resistance is 305 ± 4 Ω/□ with ±1.3% variation. The achievement is attributed to the fact that this method can significantly remove the Al, Ga, etc. metal droplets coating on the post growth flow flange and reactor wall which are difficult to clean by normal bake process under H2 ambient.

Surface cleaning for negative electron affinity GaN photocathode

NASA Astrophysics Data System (ADS)

Qiao, Jianliang; Yin, Yingpeng; Gao, Youtang; Niu, Jun; Qian, Yunsheng; Chang, Benkang

2012-10-01

In the preparation process for negative electron affinity (NEA) GaN photocathode, the surface cleanness is very important to activation, it influences the sensitivity and stability of NEA GaN photocathode. The traditional corrosion methods based on oxidizing and dissolving can't remove oxygen (O) and carbon (C) on GaN surface effectively. How to get an ideal atom clean surface is still an important question at present. The cleaning techniques for GaN photocathode was studied by using NEA photocathode activation system and XPS surface analysis system. The experiment sample is p-type GaN doped with Mg, doped concentration is 1.37×1017 cm-3, the transfer rate is 3.08 cm2/V-S, and the thickness of activation layer is 0.51 μm, the substrate is 300 μm thick sapphire. The sample was dealed with chemical cleaning depuration at first. And to get the atom clean surface, the vacuum heat cleaning process was needed. The methods of chemical cleaning and the vacuum heating cleaning were given in detail. According to the X-ray photoelectron spectroscopy of GaN surface after chemical cleaning and the vacuum degree curve of the activation chamber during the heat cleaning, the cleaning effect and the cleaning mechanism were discussed. After the effective chemical cleaning and the heating of 700 Centigrade degree about 20 minutes in ultrahigh vacuum system, the oxides and carbon contaminants on cathode surface can be removed effectively, and the ideal atom clean surface can be obtained. The purpose of heating depuration process is that not only to get the atom clean GaN surface, but also to guarantee the contents of Ga, N on GaN surface stabilize and to keep the system ultra-high vacuum degree. Because of the volatilization of oxide and carbon impurity on the cathode surface, the vacuum degree curve drops with the rising of temperature on the whole.

Aerosol emission monitoring in the production of silicon carbide nanoparticles by induction plasma synthesis

NASA Astrophysics Data System (ADS)

Thompson, Drew; Leparoux, Marc; Jaeggi, Christian; Buha, Jelena; Pui, David Y. H.; Wang, Jing

2013-12-01

In this study, the synthesis of silicon carbide (SiC) nanoparticles in a prototype inductively coupled thermal plasma reactor and other supporting processes, such as the handling of precursor material, the collection of nanoparticles, and the cleaning of equipment, were monitored for particle emissions and potential worker exposure. The purpose of this study was to evaluate the effectiveness of engineering controls and best practice guidelines developed for the production and handling of nanoparticles, identify processes which result in a nanoparticle release, characterize these releases, and suggest possible administrative or engineering controls which may eliminate or control the exposure source. No particle release was detected during the synthesis and collection of SiC nanoparticles and the cleaning of the reactor. This was attributed to most of these processes occurring in closed systems operated at slight underpressure. Other tasks occurring in more open spaces, such as the disconnection of a filter assembly from the reactor system and the use of compressed air for the cleaning of filters where synthesized SiC nanoparticles were collected, resulted in releases of submicrometer particles with a mode size of 170-180 nm. Observation of filter samples under scanning electron microscope confirmed that the particles were agglomerates of SiC nanoparticles.

Influence of the type of solvent on the development of superhydrophobicity from silane-based solution containing nanoparticles

NASA Astrophysics Data System (ADS)

Pantoja, M.; Abenojar, J.; Martinez, M. A.

2017-03-01

Superhydrophobic surfaces are very appealing for numerous industrial applications due to their self-cleaning capacity. Although there are different methods to manufacture superhydrophobic surfaces, some of them do not keep the aesthetic appearance of the neat surface. Sol-gel processes are a valid alternative when transparent coatings are desired. The main goal of this research is to study the viability of this method by making superhydrophobic coatings from silane-based solution containing SiO2 nanoparticles. The effect of using different solvents is investigated, as well as the role played by the different components of the solution (silane, nanoparticles and solvent). Solutions of methyltrimethoxisilane (MTS) and tetraethoxysilane (TEOS) and 1% of SiO2 (%wt) were prepared with different solvents (ethanol, ethanol/water and white spirit). The hydrophobicity of the developed coatings is studied using contact angle measurements, while the aesthetic appearance is evaluated with gloss and color measurements. Also, infrared spectroscopy, dynamic light scattering (DSL), and surface tension measurements are used to study the silane solutions. The results show that the capacity of solvents to promote the dispersion of the nanoparticles is crucial to ensuring superhydrophobicity, since these agglomerates provide the micro- and nano- surface roughness required to get a hierarchical structure. However, the combined use of silanes and nanoparticles is key to make a superhydrophobic surface because physical (the surface roughness provided by nanoparticles) and chemical characteristics (hydrophobicity provided by silanes) are coupled.

Semiconducting boron carbide thin films: Structure, processing, and diode applications

NASA Astrophysics Data System (ADS)

Bao, Ruqiang

The high energy density and long lifetime of betavoltaic devices make them very useful to provide the power for applications ranging from implantable cardiac pacemakers to deep space satellites and remote sensors. However, when made with conventional semiconductors, betavoltaic devices tend to suffer rapid degradation as a result of radiation damage. It has been suggested that the degradation problem could potentially be alleviated by replacing conventional semiconductors with a radiation hard semiconducting material like icosahedral boron carbide. The goal of my dissertation was to better understand the fundamental properties and structure of boron carbide thin films and to explore the processes to fabricate boron carbide based devices for voltaic applications. A pulsed laser deposition system and a radio frequency (RF) magnetron sputtering deposition system were designed and built to achieve the goals. After comparing the experimental results obtained using these two techniques, it was concluded that RF magnetron sputtering deposition technique is a good method to make B4C boron carbide thin films to fabricate repeatable and reproducible voltaic devices. The B4C thin films deposited by RF magnetron sputtering require in situ dry pre-cleaning to make ohmic contacts for B4C thin films to fabricate the devices. By adding another RF sputtering to pre-clean the substrate and thin films, a process to fabricate B4C / n-Si heterojunctions has been established. In addition, a low energy electron accelerator (LEEA) was built to mimic beta particles emitted from Pm147 and used to characterize the betavoltaic performance of betavoltaic devices as a function of beta energy and beta flux as well as do accelerated lifetime testing for betavoltaic devices. The energy range of LEEA is 20 - 250 keV with the current from several nA to 50 muA. High efficiency Si solar cells were used to demonstrate the powerful capabilities of LEEA, i.e., the characterization of betavoltaic performance and the accelerated lifetime test of betavoltaic devices. Structural analysis by X-ray diffraction and high resolution transmission electron microscopy showed that the prepared B4C thin films are amorphous. The presence of icosahedrons, which account for the radiation hardness of icosahedral boron rich solids, in the amorphous B4C thin films was supported by Fourier transform infrared spectroscopy. The pair distribution functions derived from selected area diffraction pattern of amorphous B 4C thin films showed that the short range order structure of amorphous B4C thin films is similar to beta-rhombohedral boron but with a shorter distance. The investigation of electrical properties of B4 C thin films showed that the resistivity of B4C thin films ranges from 695 O-cm to 9650 O-cm depending on the deposition temperature; the direct and indirect bandgaps for B4C thin films are 2.776 - 2.898 eV and 1.148 - 1.327 eV, respectively; the effective lifetime of excess charge carrier is close to 0.1 ms for B4C thin film deposited at room temperature and approximates to 1 ms for those deposited at 175 °C to 500 °C. Based on structural characterization and electrical properties of B4C thin films, a structural model of B4C thin films was proposed and supported by nanoindenter experiments, i.e., the hardness of thin films deposited at temperature in the range of 275 °C to 350 °C is lower than that of the films deposited at RT and 650 °C. Heterojunctions of B4C / n-Si (100) possessing photovoltaic response have been fabricated. The suitable deposition temperature for B 4C thin film to fabricate photovoltaic device is from 175 °C to 350 °C. When the Si substrate surface was not pre-cleaned before depositing B4C thin film, the B4C / n-Si (100) heterojunction has better photovoltaic responses, presumably because there were no sputter-produced defects on the surface of Si (100) substrate. Until now, the best achievable photovoltaic performance is B4C / n-Si (100) heterojunction with 200 nm thick B4C thin film when the Si (100) substrate surface was not pre-cleaned by RF sputtering. When this heterojunction was characterized using solar simulator with air mass 1.5 spectra, the short circuit current density is 1.484 mA/cm2, the open circuit voltage is about 0.389 V, and the power conversion efficiency is about 0.214 %. In addition, B5C thin films deposited by plasma enhanced chemical vapor deposition were used to make some of the devices studied in this dissertation. It was found that the Si-doped BC / n-Si (111) heterojunctions also demonstrates their photovoltaic and betavoltaic responses. Even after irradiated by a 120 keV electron beam to a fluence of 4.38x1017 electrons/cm 2, the heterojunctions still posses betavoltaic behavior and their responses to the incident irradiance density are similar to that before irradiation.

The influence of selective chemical doping on clean, low-carrier density SiC epitaxial graphene

NASA Astrophysics Data System (ADS)

Chuang, Chiashain; Yang, Yanfei; Huang, Lung-I.; Liang, Chi-Te; Elmquist, Randolph E.; National Institute of of Standards; Technology Collaboration; National Taiwan University, Department of Physics Collaboration

2015-03-01

The charge-transfer effect of ambient air on magneto-transport in polymer-free SiC graphene was investigated. Interestingly, adsorption of atmospheric gas molecules on clean epitaxial graphene can reduce the carrier density to near charge neutrality, allowing observation of highly precise v = 2 quantum Hall plateaus. The atmospheric adsorbates were reproducibly removed and pure gases (N2, O2, CO2, H2O) were used to form new individual adsorbates on SiC graphene. Our experimental results (τt/τq ~ 2) support the theoretical predictions for the ratio of transport relaxation time τt to quantum lifetime τq in clean graphene. The analysis of Shubnikov-de Haas oscillations at intermediate doping levels indicates that the carrier scattering is reduced by water and oxygen so as to increase both the classical and quantum mobility. This study points to the key dopant gases in ambient air and also paves the way towards extremely precise quantized Hall resistance standards in epitaxial graphene systems with carrier density tuned by exposure to highly pure gases and vacuum annealing treatment. National Institute of Standard and Technology.

Development of a high-yield via-last through silicon via process using notchless silicon etching and wet cleaning of the first metal layer

NASA Astrophysics Data System (ADS)

Watanabe, Naoya; Kikuchi, Hidekazu; Yanagisawa, Azusa; Shimamoto, Haruo; Kikuchi, Katsuya; Aoyagi, Masahiro; Nakamura, Akio

2017-07-01

A high-yield via-last through silicon via (TSV) process has been developed using notchless Si etching and wet cleaning of the first metal layer. In this process, the notching was suppressed by optimizing the deep Si etching conditions and wet cleaning was performed using an organic alkaline solution to remove reaction products generated by the etchback step on the first metal layer. By this process, a number of small TSVs (TSV diameter: 6 µm TSV depth: 22 µm number of TSVs: 20,000/chip) could be formed uniformly on an 8-in. wafer. The electrical characteristics of small TSVs formed by this via-last TSV process were investigated. The TSV resistance determined by four-terminal measurements was approximately 24 mΩ. The leakage current between the TSV and the Si substrate was 2.5 pA at 5 V. The TSV capacitance determined using an inductance-capacitance-resistance (LCR) meter was 54 fF, while the TSV yield determined from TSV chain measurements was high (83%) over an 8-in. wafer.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scherwitzl, Boris; Lassnig, Roman; Truger, Magdalena

The evaporation of quinacridone from a stainless steel Knudsen cell leads to the partial decomposition of this molecule in the cell, due to its comparably high sublimation temperature. At least one additional type of molecules, namely indigo, could be detected in the effusion flux. Thermal desorption spectroscopy and atomic force microscopy have been used to study the co-deposition of these molecules on sputter-cleaned and carbon-covered silicon dioxide surfaces. Desorption of indigo appears at temperatures of about 400 K, while quinacridone desorbs at around 510 K. For quinacridone, a desorption energy of 2.1 eV and a frequency factor for desorption ofmore » 1 × 10{sup 19} s{sup −1} were calculated, which in this magnitude is typical for large organic molecules. A fraction of the adsorbed quinacridone molecules (∼5%) decomposes during heating, nearly independent of the adsorbed amount, resulting in a surface composed of small carbon islands. The sticking coefficients of indigo and quinacridone were found to be close to unity on a carbon covered SiO{sub 2} surface but significantly smaller on a sputter-cleaned substrate. The reason for the latter can be attributed to insufficient energy dissipation for unfavorably oriented impinging molecules. However, due to adsorption via a hot-precursor state, the sticking probability is increased on the surface covered with carbon islands, which act as accommodation centers.« less

Durable superhydrophobic paper enabled by surface sizing of starch-based composite films

NASA Astrophysics Data System (ADS)

Chen, Gang; Zhu, Penghui; Kuang, Yudi; Liu, Yu; Lin, Donghan; Peng, Congxing; Wen, Zhicheng; Fang, Zhiqiang

2017-07-01

Superhydrophobic paper with remarkable durability is of considerable interest for its practical applications. In this study, a scalable, inexpensive, and universal surface sizing technique was implemented to prepare superhydrophobic paper with enhanced durability. A thin layer of starch-based composite, acting as a bio-binder, was first coated onto the paper surface by a sophisticated manufacturing technique called surface sizing, immediately followed by a spray coating of hexamethyl disilazane treated silica nanoparticles (HMDS-SiNPs) dispersed in ethanol on the surface of the wet starch-coated sheet, and the dual layers dried at the same time. Consequently, durable superhydrophobic paper with bi-layer structure was obtained after air drying. The as-prepared superhydrophobic paper not only exhibited a self-cleaning behavior, but also presented an enhanced durability against scratching, bending/deformation, as well as moisture. The universal surface sizing of starch-based composites may pave the way for the up-scaled and cost-effective production of durable superhydrophobic paper.

Bio-Inspired Self-Cleaning Surfaces

NASA Astrophysics Data System (ADS)

Liu, Kesong; Jiang, Lei

2012-08-01

Self-cleaning surfaces have drawn a lot of interest for both fundamental research and practical applications. This review focuses on the recent progress in mechanism, preparation, and application of self-cleaning surfaces. To date, self-cleaning has been demonstrated by the following four conceptual approaches: (a) TiO2-based superhydrophilic self-cleaning, (b) lotus effect self-cleaning (superhydrophobicity with a small sliding angle), (c) gecko setae-inspired self-cleaning, and (d) underwater organisms-inspired antifouling self-cleaning. Although a number of self-cleaning products have been commercialized, the remaining challenges and future outlook of self-cleaning surfaces are also briefly addressed. Through evolution, nature, which has long been a source of inspiration for scientists and engineers, has arrived at what is optimal. We hope this review will stimulate interdisciplinary collaboration among material science, chemistry, biology, physics, nanoscience, engineering, etc., which is essential for the rational design and reproducible construction of bio-inspired multifunctional self-cleaning surfaces in practical applications.

Characterization of laser-induced plasmas associated with energetic laser cleaning of metal particles on fused silica surfaces

DOE PAGES

Harris, Candace D.; Shen, Nan; Rubenchik, Alexander M.; ...

2015-11-04

Here, time-resolved plasma emission spectroscopy was used to characterize the energy coupling and temperature rise associated with single, 10-ns pulsed laser ablation of metallic particles bound to transparent substrates. Plasma associated with Fe(I) emission lines originating from steel microspheres was observed to cool from >24,000 to ~15,000 K over ~220 ns asmore » $$\\tau$$ -0.28, consistent with radiative losses and adiabatic gas expansion of a relatively free plasma. Simultaneous emission lines from Si(II) associated with the plasma etching of the SiO2 substrate were observed yielding higher plasma temperatures, ~35,000 K, relative to the Fe(I) plasma. Lastly, the difference in species temperatures is consistent with plasma confinement at the microsphere-substrate interface as the particle is ejected, and is directly visualized using pump-probe shadowgraphy as a function of pulsed laser energy.« less

Evaluation of preparation methods for suspended nano-objects on substrates for dimensional measurements by atomic force microscopy

PubMed Central

Göhler, Daniel; Wessely, Benno; Stintz, Michael; Lazzerini, Giovanni Mattia; Yacoot, Andrew

2017-01-01

Dimensional measurements on nano-objects by atomic force microscopy (AFM) require samples of safely fixed and well individualized particles with a suitable surface-specific particle number on flat and clean substrates. Several known and proven particle preparation methods, i.e., membrane filtration, drying, rinsing, dip coating as well as electrostatic and thermal precipitation, were performed by means of scanning electron microscopy to examine their suitability for preparing samples for dimensional AFM measurements. Different suspensions of nano-objects (with varying material, size and shape) stabilized in aqueous solutions were prepared therefore on different flat substrates. The drop-drying method was found to be the most suitable one for the analysed suspensions, because it does not require expensive dedicated equipment and led to a uniform local distribution of individualized nano-objects. Traceable AFM measurements based on Si and SiO2 coated substrates confirmed the suitability of this technique. PMID:28904839

Evaluation of preparation methods for suspended nano-objects on substrates for dimensional measurements by atomic force microscopy.

PubMed

Fiala, Petra; Göhler, Daniel; Wessely, Benno; Stintz, Michael; Lazzerini, Giovanni Mattia; Yacoot, Andrew

2017-01-01

Dimensional measurements on nano-objects by atomic force microscopy (AFM) require samples of safely fixed and well individualized particles with a suitable surface-specific particle number on flat and clean substrates. Several known and proven particle preparation methods, i.e., membrane filtration, drying, rinsing, dip coating as well as electrostatic and thermal precipitation, were performed by means of scanning electron microscopy to examine their suitability for preparing samples for dimensional AFM measurements. Different suspensions of nano-objects (with varying material, size and shape) stabilized in aqueous solutions were prepared therefore on different flat substrates. The drop-drying method was found to be the most suitable one for the analysed suspensions, because it does not require expensive dedicated equipment and led to a uniform local distribution of individualized nano-objects. Traceable AFM measurements based on Si and SiO 2 coated substrates confirmed the suitability of this technique.

The controlled growth of graphene nanowalls on Si for Schottky photodetector

NASA Astrophysics Data System (ADS)

Zhou, Quan; Liu, Xiangzhi; Zhang, Enliang; Luo, Shi; Shen, Jun; Wang, Yuefeng; Wei, Dapeng

2017-12-01

Schottky diode with directly-grown graphene on silicon substrate has advantage of clean junction interface, promising for photodetectors with high-speed and low noise. In this report, we carefully studied the influence of growth parameters on the junction quality and photoresponse of graphene nanowalls (GNWs)-based Schottky photodetectors. We found that shorter growth time is critical for lower dark current, but at the same time higher photocurrent. The influence of growth parameters was attributed to the defect density of various growth time, which results in different degrees of surface absorption for H2O/O2 molecules and P-type doping level. Raman characterization and vacuum annealing treatment were carried out to confirm the regulation mechanism. Meanwhile, the release of thermal stress also makes the ideality factor η of thinner sample better than the thicker. Our results are important for the response improvement of photodetectors with graphene-Si schottky junction.

Method for cleaning and passivating a metal surface

NASA Technical Reports Server (NTRS)

Alexander, George B. (Inventor); Carpenter, Norman F. (Inventor)

1976-01-01

A cleaning solvent useful in the cleaning of metal surfaces, e.g. nickle-iron alloys, contains sulfamic acid, citric acid, a solvent for hydrocarbon residues, and a surfactant. Metal surfaces are cleaned by contacting the surface with the cleaning solvent and then passivated by contact with aqueous solutions of citric acid or sodium nitrite or a combination of the two.

Solution-Synthesized Chevron Graphene Nanoribbons Exfoliated onto H:Si(100).

PubMed

Radocea, Adrian; Sun, Tao; Vo, Timothy H; Sinitskii, Alexander; Aluru, Narayana R; Lyding, Joseph W

2017-01-11

There has been tremendous progress in designing and synthesizing graphene nanoribbons (GNRs). The ability to control the width, edge structure, and dopant level with atomic precision has created a large class of accessible electronic landscapes for use in logic applications. One of the major limitations preventing the realization of GNR devices is the difficulty of transferring GNRs onto nonmetallic substrates. In this work, we developed a new approach for clean deposition of solution-synthesized atomically precise chevron GNRs onto H:Si(100) under ultrahigh vacuum. A clean transfer allowed ultrahigh-vacuum scanning tunneling microscopy (STM) to provide high-resolution imaging and spectroscopy and reveal details of the electronic structure of chevron nanoribbons that have not been previously reported. We also demonstrate STM nanomanipulation of GNRs, characterization of multilayer GNR cross-junctions, and STM nanolithography for local depassivation of H:Si(100), which allowed us to probe GNR-Si interactions and revealed a semiconducting-to-metallic transition. The results of STM measurements were shown to be in good agreement with first-principles computational modeling.

Mechanically durable, superoleophobic coatings prepared by layer-by-layer technique for anti-smudge and oil-water separation

PubMed Central

Brown, Philip S.; Bhushan, Bharat

2015-01-01

Superoleophobic surfaces are of interest for anti-fouling, self-cleaning, anti-smudge, low-drag, anti-fog, and oil-water separation applications. Current bioinspired surfaces are of limited use due to a lack of mechanical durability. A so-called layer-by-layer approach, involving charged species with electrostatic interactions between layers, can provide the flexibility needed to improve adhesion to the substrate while providing a low surface tension coating at the air interface. In this work, a polyelectrolyte binder, SiO2 nanoparticles, and a fluorosurfactant are spray deposited separately to create a durable, superoleophobic coating. Polydiallyldimethylammonium chloride (PDDA) polyelectrolyte was complexed with a fluorosurfactant layer (FL), which provides oil repellency while being hydrophilic. This oleophobic/superhydrophilic behavior was enhanced through the use of roughening with SiO2 particles resulting in a superoleophobic coating with hexadecane contact angles exceeding 155° and tilt angles of less than 4°. The coating is also superhydrophilic, which is desirable for oil-water separation applications. The durability of these coatings was examined through the use of micro- and macrowear experiments. These coatings currently display characteristics of transparency. Fabrication of these coatings via the layer-by-layer technique results in superoleophobic surfaces displaying improved durability compared to existing work where either the durability or the oil-repellency is compromised. PMID:25731716

Effectiveness of disinfectant wipes for decontamination of bacteria on patients' environmental and medical equipment surfaces at Siriraj Hospital.

PubMed

Seenama, Chakkraphong; Tachasirinugune, Peenithi; Jintanothaitavorn, Duangporn; Kachintorn, Kanchana; Thamlikitkul, Visanu

2013-02-01

To determine the effectiveness of Virusolve+ disinfectant wipes and PAL disinfectant wipes for decontamination of inoculated bacteria on patients' environmental and medical equipment surfaces at Siriraj Hospital. Tryptic soy broths containing MRSA and XDR A. baumannii were painted onto the surfaces of patient's stainless steel bed rail, patient's fiber footboard, control panel of infusion pump machine and control panel of respirator. The contaminated surfaces were cleaned by either tap water, tap water containing detergent, Virusolve+ disinfectant wipes or PAL disinfectant wipes. The surfaces without any cleaning procedures served as the control surface. The contaminated surfaces cleaned with the aforementioned procedures and control surfaces were swabbed with cotton swabs. The swabs were streaked on agar plates to determine the presence of MRSA and XDR A. baumannii. MRSA and XDR A. baumannii were recovered from all control surfaces. All surfaces cleaned with tap water or tap water containing detergent revealed presence of both MRSA and XDR A. baumannii. However the amounts of bacteria on the surfaces cleaned with tap water containing detergent were less than those cleaned with tap water alone. All surfaces cleaned with PAL disinfectant wipes also revealed presence of both MRSA and XDR A. baumannii. However the amounts of bacteria on the surfaces cleaned with PAL disinfectant wipes were less than those cleaned with tap water containing detergent. No bacteria were recovered from all surfaces cleaned with Virusolve+ disinfectant wipes. Virusolve+ disinfectant wipes were more effective than tap water; tap water containing detergent and PAL disinfectant wipes for decontamination of bacteria inoculated on patients environmental and medical equipment surfaces at Siriraj Hospital.

Nitriding kinetics of Si-SiC powder mixtures as simulations of reaction bonded Si3N4-SiC composites

NASA Technical Reports Server (NTRS)

Lightfoot, A.; Sheldon, B. W.; Flint, J. H.; Haggerty, J. S.

1989-01-01

The nitriding kinetics of Si and Si plus SiC powder mixtures were studied to simulate the fabrication of RBSN-SiC ceramic matrix composites. Very clean, assynthesized, and solvent-exposed powders were studied; C-rich and Si-rich SiC 0.04-0.05 micron diameter powders were mixed in varying concentrations with SiH4-derived 0.2-0.3 micron diameter Si powder. Complete nitridation is achieved with C-rich SiC powders in 140 min at 1250 C, and in the centers of Si-rich SiC powders in 15 min. The effects on the incubation periods, fast reaction periods, and slow reaction periods that characterize these nitriding processes were studied to explain unusual reverse reaction gradients and other effects of contamination.

In situ REM and ex situ SPM studies of silicon (111) surface

NASA Astrophysics Data System (ADS)

Aseev, A. L.; Kosolobov, S. S.; Latyshev, A. V.; Song, Se Ahn; Saranin, A. A.; Zotov, A. V.; Lifshits, V. G.

2005-09-01

Combination of experimental methods, including ultrahigh vacuum in situ reflection electron microscopy, scanning tunnelling microscopy and atomic force microscopy, has been applied for analysis of surface structure and dynamic processes on silicon (111) surfaces during sublimation, rapid temperature cooling, oxygen reactions and metal-silicon surface phase formation. From analysis of triangular negative islands, 0.08 nm in depth, which were forming during quenching, it was deduced the effective activation energy of the island generation is equalled to 0.35 eV and made conclusion that the (1 × 1) (7 × 7) phase transition on Si(111) assumes to be responsible for the negative island nucleation. On the base of the in situ REM study, the dependence of step motion, initiated by surface vacancies generation during oxygen-silicon interaction, on the terrace width was measured. Peculiarities of the initial stages of silicon surface oxidation at low pressures were considered. From precision measurements, the top silicon atom density was determined for the metal-silicon surface phase formed during Na, Ca, Mg and Ag deposition on clean silicon (111) surface.

Multifunctional microstructured polymer films for boosting solar power generation of silicon-based photovoltaic modules.

PubMed

Leem, Jung Woo; Choi, Minkyu; Yu, Jae Su

2015-02-04

We propose two-dimensional periodic conical micrograting structured (MGS) polymer films as a multifunctional layer (i.e., light harvesting and self-cleaning) at the surface of outer polyethylene terephthalate (PET) cover-substrates for boosting the solar power generation in silicon (Si)-based photovoltaic (PV) modules. The surface of ultraviolet-curable NOA63 MGS polymer films fabricated by the soft imprint lithography exhibits a hydrophobic property with water contact angle of ∼121° at no inclination and dynamic advancing/receding water contact angles of ∼132°/111° at the inclination angle of 40°, respectively, which can remove dust particles or contaminants on the surface of PV modules in real outdoor environments (i.e., self-cleaning). The NOA63 MGS film coated on the bare PET leads to the reduction of reflection as well as the enhancement of both the total and diffuse transmissions at wavelengths of 300-1100 nm, indicating lower solar weighted reflectance (RSW) of ∼8.2%, higher solar weighted transmittance (TSW) of ∼93.1%, and considerably improved average haze ratio (HAvg) of ∼88.3% as compared to the bare PET (i.e., RSW ≈ 13.5%, TSW ≈ 86.9%, and HAvg ≈ 9.1%), respectively. Additionally, it shows a relatively good durability at temperatures of ≤160 °C. The resulting Si PV module with the NOA63 MGS/PET has an enhanced power conversion efficiency (PCE) of 13.26% (cf., PCE = 12.55% for the reference PV module with the bare PET) due to the mainly improved short circuit current from 49.35 to 52.01 mA, exhibiting the PCE increment percentage of ∼5.7%. For light incident angle-dependent PV module current-voltage characteristics, superior solar energy conversion properties are also obtained in a broad angle range of 10-80°.

Laser Ablation Cleaning of Self-Reacting Friction Stir Weld Seam Surfaces: A Preliminary Evaluation

NASA Technical Reports Server (NTRS)

Nunes, A. C., Jr.; Russell, C. K.; Brooke, S. A.; Parry, Q.; Lowrey, N. M.

2014-01-01

Anodized aluminum panels were cleaned by three lasers at three separate sites with a view to determining whether more economical laser cleaning might supplant current manual cleaning methods for preparation of surfaces to be welded by the self-reacting friction stir process. Uncleaned panels yielded welds exhibiting residual oxide defect (ROD) and failing at very low stresses along the trace of the weld seam. Manually cleaned panels yielded welds without ROD; these welds failed at nominal stress levels along an angled fracture surface not following the weld seam trace. Laser cleaned panels yielded welds failing at intermediate stress levels. The inadequacy of the laser cleaning processes leaves questions: Was the anodized aluminum test too stringent to represent actual cleaning requirements? Were the wrong laser cleaning techniques/parameters used for the study? Is the laser cleaning mechanism inadequate for effective preweld surface cleaning?

Investigation of aluminum surface cleaning using cavitating fluid flow

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ralys, Aurimas; Striška, Vytautas; Mokšin, Vadim

This paper investigates efficiency of specially designed atomizer used to spray water and cavitate microbubbles in water flow. Surface cleaning system was used to clean machined (grinded) aluminum surface from abrasive particles. It is established that cleaning efficiency depends on diameter of the diffuser, water pressure and distance between nozzle and metal surface. It is obtained that the best cleaning efficiency (100%) is achieved at pressure 36 bar, when diameter of diffuser is 0.4 mm and distance between nozzle and surface is 1 mm. It is also established that satisfactory cleaning efficiency (80%) is achieved not only when atomizer ismore » placed closer to metal surface, but also at larger (120 mm) distances.« less

Final Technical Report - 300°C Capable Electronics Platform and Temperature Sensor System For Enhanced Geothermal Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Cheng-Po; Shaddock, David; Sandvik, Peter

2012-11-30

A silicon carbide (SiC) based electronic temperature sensor prototype has been demonstrated to operate at 300°C. We showed continuous operation of 1,000 hours with SiC operational amplifier and surface mounted discreet resistors and capacitors on a ceramic circuit board. This feasibility demonstration is a major milestone in the development of high temperature electronics in general and high temperature geothermal exploration and well management tools in particular. SiC technology offers technical advantages that are not found in competing technologies such as silicon-on-insulator (SOI) at high temperatures of 200°C to 300°C and beyond. The SiC integrated circuits and packaging methods can bemore » used in new product introduction by GE Oil and Gas for high temperature down-hole tools. The existing SiC fabrication facility at GE is sufficient to support the quantities currently demanded by the marketplace, and there are other entities in the United States and other countries capable of ramping up SiC technology manufacturing. The ceramic circuit boards are different from traditional organic-based electronics circuit boards, but the fabrication process is compatible with existing ceramic substrate manufacturing. This project has brought high temperature electronics forward, and brings us closer to commercializing tools that will enable and reduce the cost of enhanced geothermal technology to benefit the public in terms of providing clean renewable energy at lower costs.« less

A study on the reaction between chlorine trifluoride gas and glass-like carbon

NASA Astrophysics Data System (ADS)

Saito, Yoji; Nishizawa, Takashi; Hamaguchi, Maki

2005-02-01

The reaction between glass-like carbon (GC) and chlorine trifluoride (ClF 3) gas was investigated with weight measurements, surface analysis, and gas desorption measurements, where the ClF 3 gas is used for the in situ cleaning of tubes in silicon-related fabrication equipment. From Auger electron spectroscopy and X-ray photoelectron spectroscopy measurements, a carbon mono-fluoride, -(CF) n-, film near the surface of GC is considered to be grown onto the GC surface above 400 °C by the chemical reaction with ClF 3, and this thickness of the fluoride film depends on the temperature. The grown fluoride film desorbs by annealing in a vacuum up to 600 °C. Although GC is apparently etched by ClF 3 over 600 °C, the etch rate of GC is much lower than that of SiC and quartz.

A New Ordered Si/SiO2 phase: Infrared Spectroscopy Analysis and Modeling

NASA Astrophysics Data System (ADS)

Bradley, J.; Herbots, N.; Shaw, J.; Atluri, V.; Queeney, K. T.; Chabal, Y. J.

2003-10-01

A new ordered Si/SiO2 phase is grown by conventional oxidation on ordered, OH-terminated (1x1)Si(100) surfaces formed at room temperature in ambient using a wet chemical cleaning method [1, 2] combined with conventional oxidation. Si atoms within 1-2.5 nm thick SiO2 are found to be in registry with respect to Si atoms in the Si(100). The degree of ordering is characterized by combining ion channeling with nuclear resonance analysis, as well as Reflective High Energy Electron Diffraction (RHEED), and High Resolution Transmission Electron Microscopy (HRTRM) and is found to be confined to a 2nm region in the SiO2[1]. Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) and Elastic Recoil Deflection (ERD) were used to profile silicon, oxygen, carbon, and hydrogen coverage within the ordered interphase. Most recently, infrared spectroscopy [2] was employed to investigate the bonding at the ordered Si/SiO2 interface and compare the suboxides region to conventional thermal oxides. Infrared spectroscopy shows that the TO red-shift due to SiOx cross-bonding at the Si/SiO2 interface is 50 % smaller and occurs more abruptly than in conventional thermal oxides. This indicates a more homogeneous bonding environment between Si and SiO2, which is consistent with the presence of an ordered phase. Using these results, we are modeling the structure of the 2 nm interphase with 3DSTRING [3]. This Monte Carlo Simulation enables us to compare the channeling spectra with the experimental data for the possible phase configuration in ordered SiOx on Si. [1] N. Herbots, V. Atluri, J. D. Bradley, J. Xiang, S. Banerjee, Q.Hurst, US Patent #6,613,677, Granted 9/2/2003 [2] N. Herbots, J. M. Shaw, Q. B. Hurst, M. P. Grams, R. J. Culbertson, D. J. Smith, V. Atluri, P. Zimmerman, and K. T. Queeney, Mat. Sci. Eng. B B87, 303-316 (2001). [3] K. T. Queeney, N. Herbots, Justin, M. Shaw, V. Atluri, Y. J. Chabal (to be published)

Self-cleaning of Surfaces: the Role of Surface Wettability and Dust Types

NASA Astrophysics Data System (ADS)

Quan, Yun-Yun; Zhang, Li-Zhi; Qi, Rong-Hui; Cai, Rong-Rong

2016-12-01

The self-cleaning property is usually connected to superhydrophobic surfaces (SHSs) where the dust particles can be easily removed by the rolling motion of droplets. It seems that superhydrophobicity (its durability is questionable nowadays) is a necessity. However here, it is disclosed that self-cleaning can also be realized on an ordinary surface by droplet impinging. The effects of surface wettability and the types of dust particles are considered. The self-cleaning is realized by two steps: (1) the pickup of particles by the water-air interface of an impinging droplet, (2) the release of the impinging droplets from the surface. It can be observed that only the trailing edges of the droplets can pick up particles when the droplets recoil from the inclined surfaces. The hydrophilic surface can also achieve self-cleaning under some conditions. This interesting finding may be helpful for the successful implementation of self-cleaning with common surfaces.

Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration

NASA Astrophysics Data System (ADS)

Cariou, Romain; Chen, Wanghua; Maurice, Jean-Luc; Yu, Jingwen; Patriarche, Gilles; Mauguin, Olivia; Largeau, Ludovic; Decobert, Jean; Roca I Cabarrocas, Pere

2016-05-01

The integration of III-V semiconductors with silicon is a key issue for photonics, microelectronics and photovoltaics. With the standard approach, namely the epitaxial growth of III-V on silicon, thick and complex buffer layers are required to limit the crystalline defects caused by the interface polarity issues, the thermal expansion, and lattice mismatches. To overcome these problems, we have developed a reverse and innovative approach to combine III-V and silicon: the straightforward epitaxial growth of silicon on GaAs at low temperature by plasma enhanced CVD (PECVD). Indeed we show that both GaAs surface cleaning by SiF4 plasma and subsequent epitaxial growth from SiH4/H2 precursors can be achieved at 175 °C. The GaAs native oxide etching is monitored with in-situ spectroscopic ellipsometry and Raman spectroscopy is used to assess the epitaxial silicon quality. We found that SiH4 dilution in hydrogen during deposition controls the layer structure: the epitaxial growth happens for deposition conditions at the transition between the microcrystalline and amorphous growth regimes. SIMS and STEM-HAADF bring evidences for the interface chemical sharpness. Together, TEM and XRD analysis demonstrate that PECVD enables the growth of high quality relaxed single crystal silicon on GaAs.

Photoluminescence and capacitance voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer

NASA Astrophysics Data System (ADS)

Anantathanasarn, Sanguan; Hasegawa, Hideki

2002-05-01

A novel surface passivation technique for GaAs using an ultrathin GaN interface control layer (GaN ICL) formed by surface nitridation was characterized by ultrahigh vacuum (UHV) photoluminescence (PL) and capacitance-voltage ( C- V) measurements. The PL quantum efficiency was dramatically enhanced after being passivated by the GaN ICL structure, reaching as high as 30 times of the initial clean GaAs surface. Further analysis of PL data was done by the PL surface state spectroscopy (PLS 3) simulation technique. PL and C- V results are in good agreement indicating that ultrathin GaN ICL reduces the gap states and unpins the Fermi level, realizing a wide movement of Fermi level within the midgap region and reduction of the effective surface recombination velocity by a factor of 1/60. GaN layer also introduced a large negative surface fixed charge of about 10 12 cm -2. A further improvement took place by depositing a Si 3N 4 layer on GaN ICL/GaAs structure.

Open Air Silicon Deposition by Atmospheric Pressure Plasma under Local Ambient Gas Control

NASA Astrophysics Data System (ADS)

Naito, Teruki; Konno, Nobuaki; Yoshida, Yukihisa

2015-09-01

In this paper, we report open air silicon (Si) deposition by combining a silane free Si deposition technology and a newly developed local ambient gas control technology. Recently, material processing in open air has been investigated intensively. While a variety of materials have been deposited, there were only few reports on Si deposition due to the susceptibility to contamination and the hazardous nature of source materials. Since Si deposition is one of the most important processes in device fabrication, we have developed open air silicon deposition technologies in BEANS project. For a clean and safe process, a local ambient gas control head was designed. Process gas leakage was prevented by local evacuation, and air contamination was shut out by inert curtain gas. By numerical and experimental investigations, a safe and clean process condition with air contamination less than 10 ppm was achieved. Si film was deposited in open air by atmospheric pressure plasma enhanced chemical transport under the local ambient gas control. The film was microcrystalline Si with the crystallite size of 17 nm, and the Hall mobility was 2.3 cm2/V .s. These properties were comparable to those of Si films deposited in a vacuum chamber. This research has been conducted as one of the research items of New Energy and Industrial Technology Development Organization ``BEANS'' project.

On the wettability diversity of C/SiC surface: Comparison of the ground C/SiC surface and ablated C/SiC surface from three aspects

NASA Astrophysics Data System (ADS)

Wu, M. L.; Ren, C. Z.; Xu, H. Z.

2016-11-01

The coefficient of thermal conductivity was influenced by the wetting state of material. The wetting state usually depends on the surface wettability. C/SiC is a promising ceramic composites with multi-components. The wettability of C/SiC composites is hard to resort to the classical wetting theory directly. So far, few investigations focused on C/SiC surface wettability diversity after different material removal processes. In this investigation, comparative studies of surface wettability of ground C/SiC surface and laser-ablated C/SiC surface were carried out through apparent contact angle (APCA) measurements. The results showed that water droplets easily reached stable state on ground C/SiC surface; while the water droplets rappidly penetrated into the laser-ablated C/SiC surface. In order to find out the reason for wettability distinctions between the ground C/SiC surface and the laser-ablated C/SiC surface, comparative studies on the surface micro-structure, surface C-O-Si distribution, and surface C-O-Si weight percentage were carried out. The results showed that (1) A large number of micro cracks in the fuzzy pattern layer over laser-ablated C/SiC surfaces easily destoried the surface tension of water droplets, while only a few cracks existed over the ground C/SiC surfaces. (2) Chemical components (C, O, Si) were non-uniformly distributed on ground C/SiC surfaces, while the chemical components (C, O, Si) were uniformly distributed on laser-ablated C/SiC surfaces. (3) The carbon weight percentage on ground C/SiC surfaces were higher than that on laser-ablated C/SiC surfaces. All these made an essential contribution to the surface wettability diversity of C/SiC surface. Although more investigations about the quantitative influence of surface topography and surface chemical composition on composites wettability are still needed, the conslusion can be used in application: the wettability of C/SiC surface can be controlled by different material removal process without individual following up surface modification process.

Nature of adsorption on TiC(111) investigated with density-functional calculations

NASA Astrophysics Data System (ADS)

Ruberto, Carlo; Lundqvist, Bengt I.

2007-06-01

Extensive density-functional calculations are performed for chemisorption of atoms in the three first periods (H, B, C, N, O, F, Al, Si, P, S, and Cl) on the polar TiC(111) surface. Calculations are also performed for O on TiC(001), for full O(1×1) monolayer on TiC(111), as well as for bulk TiC and for the clean TiC(111) and (001) surfaces. Detailed results concerning atomic structures, energetics, and electronic structures are presented. For the bulk and the clean surfaces, previous results are confirmed. In addition, detailed results are given on the presence of C-C bonds in the bulk and at the surface, as well as on the presence of a Ti-based surface resonance (TiSR) at the Fermi level and of C-based surface resonances (CSR’s) in the lower part of the surface upper valence band. For the adsorption, adsorption energies Eads and relaxed geometries are presented, showing great variations characterized by pyramid-shaped Eads trends within each period. An extraordinarily strong chemisorption is found for the O atom, 8.8eV /adatom. On the basis of the calculated electronic structures, a concerted-coupling model for the chemisorption is proposed, in which two different types of adatom-substrate interactions work together to provide the obtained strong chemisorption: (i) adatom-TiSR and (ii) adatom-CSR’s. This model is used to successfully describe the essential features of the calculated Eads trends. The fundamental nature of this model, based on the Newns-Anderson model, should make it apt for general application to transition-metal carbides and nitrides and for predictive purposes in technological applications, such as cutting-tool multilayer coatings and MAX phases.

Oxidation of silicon with a 5 eV O(-) beam

NASA Technical Reports Server (NTRS)

Hecht, M. H.; Orient, O. J.; Chutjian, A.; Vasquez, R. P.

1989-01-01

A silicon wafer has been oxidized at room temperature in vacuum using a pure, ground-state beam of O(-) ions. The beam was of sufficiently low energy that no displacement damage or implantation was energetically possible. The resulting SiO2 films were analyzed with X-ray photoelectron spectroscopy. A logarithmic dependence of oxide thickness on dose was observed, with an extrapolated oxidation efficiency of unity for the clean silicon surface. A distinct initial oxidation phase was observed, with an anomalously high level of silicon suboxides. In addition, the valence-band offset between the silicon and the oxide was unusually small, suggesting a large interfacial dipole.

Amorphous and crystalline silicon based heterojunction solar cells

NASA Astrophysics Data System (ADS)

Schüttauf, J. A.

2011-10-01

In this thesis, research on amorphous and crystalline silicon heterojunction (SHJ) solar cells is described. Probably the most important feature of SHJ solar cells is a thin intrinsic amorphous silicion (a-Si:H) layer that is deposited before depositing the doped emitter and back surface field. The passivation properties of such intrinsic layers made by three different chemical vapor deposition (CVD) techniques have been investigated. For layers deposited at 130°C, all techniques show a strong reduction in surface recombination velocity (SRV) after annealing. Modelling indicates that dangling bond saturation by atomic hydrogen is the predominant mechanism. We obtain outstanding carrier lifetimes of 10.3 ms, corresponding to SRVs of 0.56 cm/s. For a-Si:H films made at 250°C, an as-deposited minority carrier lifetime of 2.0 ms is observed. In contrast to a-Si:H films fabricated at 130°C, however, no change in passivation quality upon thermal annealing is observed. These films were fabricated for the first time using a continuous in-line HWCVD mode. Wafer cleaning before a-Si:H deposition is a crucial step for c-Si surface passivation. We tested the influence of an atomic hydrogen treatment before a-Si:H deposition on the c-Si surface. The treatments were performed in a new virgin chamber to exclude Si deposition from the chamber walls. Subsequently, we deposited a-Si:H layers onto the c-Si wafers and measured the lifetime for different H treatment times. We found that increasing hydrogen treatment times led to lower effective lifetimes. Modelling of the measured minority carrier lifetime data shows that the decreased passivation quality is caused by an increased defect density at the amorphous-crystalline interface. Furtheremore, the passivation of different a-Si:H containing layers have been tested. For intrinsic films and intrinsic/n-type stacks, an improvement in passivation up to 255°C and 270°C is observed. This improvement is attributed to dangling bond saturation by H, whereas the decrease at higher temperatures is caused by H effusion. For intrinsic/n-type a-Si:H layer stacks, a record minority carrier lifetime of 13.3 ms is obtained. In contrast, for intrinsic/p-type a-Si:H layer stacks, a deterioration in passivation is observed over the whole temperature range, due to the asymmetric Fermi-level dependent defect formation enthalpy in n- and p-type a-Si:H. Comparing the lifetime values and trends for the different layer stacks to the performance of the corresponding cells, it is observed that the intrinsic/p-layer stack is limiting device performance. Based on these findings, the solar cells were prepared in a modified order, reaching an efficiency of 16.7% (VOC = 681 mV), versus 15.8% (VOC = 659 mV) in the ‘standard’ order. Finally, transparent conductive oxide (TCO) layers are studied for application into solar cells. It is observed that both types of TCO deposition have no significant influence on the passivation properties of standard a-Si:H layer stacks forming the emitter structure in the used SHJ cells. On flat wafers, a conversion efficiency of 16.7% has been obtained when ITO is used as TCO, versus an efficiency of 16.3% for ZnO:Al; slightly lower due to increased electrical losses.

Selective deposition for ''chamber clean-free'' processes using tailored voltage waveform plasmas

NASA Astrophysics Data System (ADS)

Wang, Junkang; v. Johnson, Erik

2016-09-01

Tailored Voltage Waveforms (TVWs) have been proven capable of creating plasma asymmetries in otherwise symmetric CCP reactors. Particularly, sawtooth TVWs (described as having strong slope-asymmetry due to different voltage rise/fall slope) can lead to different sheath dynamics, thus generating strongly asymmetric ionization near each electrode. To date, research concerning the slope-asymmetry has only focused on single-gas plasmas. Herein, we present a study looking at SiF4/H2/Ar mixtures to investigate silicon thin film deposition. The resulting surface process depends strongly on multiple precursors, and the deposition requires a specific balance between surface arrival rates of SiFx and H. For a certain gas flow ratio, we can obtain a deposition rate of 0.82Å/s on one electrode and an etching rate of 1.2Å/s on the other. Moreover, the deposition/etching balance can be controlled by H2 flow and waveform amplitude. This is uniquely possible due to the mixed-gas nature of the process and localized ionization generated by sawtooth TVWs. This encourages the prospect that one could choose process conditions to achieve a variety of desired depositions on one electrode, while leaving the other pristine.

Conversion of hydrophilic SiOC nanofibrous membrane to robust hydrophobic materials by introducing palladium

NASA Astrophysics Data System (ADS)

Wu, Nan; Wan, Lynn Yuqin; Wang, Yingde; Ko, Frank

2017-12-01

Hydrophobic ceramic nanofibrous membranes have wide applications in the fields of high-temperature filters, oil/water separators, catalyst supports and membrane reactors, for their water repellency property, self-cleaning capability, good environmental stability and long life span. In this work, we fabricated an inherently hydrophobic ceramic nanofiber membrane without any surface modification through pyrolysis of electrospun polycarbosilane nanofibers. The hydrophobicity was introduced by the hierarchical microstructure formed on the surface of the nanofibers and the special surface composition by the addition of trace amounts of palladium. Furthermore, the flexible ceramic mats demonstrated robust chemical resistance properties with consistent hydrophobicity over the entire pH value range and effective water-in-oil emulsion separation performance. Interestingly, a highly cohesive force was found between water droplet and the ceramic membranes, suggesting their great potentials in micro-liquid transportation. This work provides a new route for adjusting the composition of ceramic surface and flexible, recyclable and multifunctional ceramic fibrous membranes for utilization in harsh environments.

75 FR 18500 - Guidance on Improving EPA Review of Appalachian Surface Coal Mining Operations under the Clean...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-04-12

... of Appalachian Surface Coal Mining Operations under the Clean Water Act, National Environmental... Appalachian Surface Coal Mining Operations under the Clean Water Act, National Environmental Policy Act, and... coal mining operations under the Clean Water Act, National Environmental Policy Act, and the...

Low cost back contact heterojunction solar cells on thin c-Si wafers. integrating laser and thin film processing for improved manufacturability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hegedus, Steven S.

2015-09-08

An interdigitated back contact (IBC) Si wafer solar cell with deposited a-Si heterojunction (HJ) emitter and contacts is considered the ultimate single junction Si solar cell design. This was confirmed in 2014 by both Panasonic and Sharp Solar producing IBC-HJ cells breaking the previous record Si solar cell efficiency of 25%. But manufacturability at low cost is a concern for the complex IBC-HJ device structure. In this research program, our goals were to addressed the broad industry need for a high-efficiency c-Si cell that overcomes the dominant module cost barriers by 1) developing thin Si wafers synthesized by innovative, kerflessmore » techniques; 2) integrating laser-based processing into most aspects of solar cell fabrication, ensuring high speed and low thermal budgets ; 3) developing an all back contact cell structure compatible with thin wafers using a simplified, low-temperature fabrication process; and 4) designing the contact patterning to enable simplified module assembly. There were a number of significant achievements from this 3 year program. Regarding the front surface, we developed and applied new method to characterize critical interface recombination parameters including interface defect density Dit and hole and electron capture cross-section for use as input for 2D simulation of the IBC cell to guide design and loss analysis. We optimized the antireflection and passivation properties of the front surface texture and a-Si/a-SiN/a-SiC stack depositions to obtain a very low (< 6 mA/cm2) front surface optical losses (reflection and absorption) while maintaining excellent surface passivation (SRV<5 cm/s). We worked with kerfless wafer manufacturers to apply defect-engineering techniques to improve bulk minority-carrier lifetime of thin kerfless wafers by both reducing initial impurities during growth and developing post-growth gettering techniques. This led insights about the kinetics of nickel, chromium, and dislocations in PV-grade silicon and to achieving millisecond lifetimes in kerfless silicon materials. Laser fired contacts to n-Si were developed for the first time using a Al/Sb/Ti metal stack giving contact resistances < 5 mOhm-cm2 when fired through several different dielectric layers. A new 2 step laser+chemical etch isolation technique was developed using a sacrificial top coating which avoids laser damage to Si passivation. Regarding the heterojunction emitter, analysis of front FHJ (1D) and IBC (2D) cells with range of p-layer conditions found that a 2-stage high/low doped p-layer was optimum: the low doped region has lower defects giving higher Voc and the high doped region gave a better contact to the metal. A significant effort was spent studying the patterning process and its contribution to degradation of passivation and reproducibility. Several promising new cleaning, contact and deposition patterning and processing approaches were implemented leading to fabrication of several runs with cells having 19-20% efficiency which were stable over several months. This program resulted in the training and support of 12 graduate students, publication of 21 journal papers and 14 conference papers.« less

Development of durable self-cleaning coatings using organic-inorganic hybrid sol-gel method

NASA Astrophysics Data System (ADS)

Kumar, Divya; Wu, Xinghua; Fu, Qitao; Ho, Jeffrey Weng Chye; Kanhere, Pushkar D.; Li, Lin; Chen, Zhong

2015-07-01

Self-cleaning coatings with excellent water-repellence and good mechanical properties are in high demand. However, producing such coatings with resistance to mechanical abrasion and environmental weathering remains a key challenge. Mechanically robust coatings based on tetraethylorthosilicate (TEOS) and glycidoxypropyltriethoxysilane (Glymo) have been prepared using a sol-gel method. Emphasis is given to the addition of Glymo, an epoxy silane which creates an organic matrix that blends with the inorganic Sisbnd Osbnd Si matrix formed from the TEOS. The combination of the blended matrix produced coatings with good adhesion to substrates and improved mechanical properties. Fluoroalkylsilane (FAS) and silica fillers were introduced to increase the hydrophobicity of the coating. It was found that the water contact angle (CA) of these coatings increases from 115° to 164° upon decreasing filler size from 1-5 μm to 10-20 nm. The sliding angle (SA) for coatings with 15 wt.% loading of 10-20 nm silica is around 2°. UV weathering does not show significant effect on the properties of the coatings. Mechanical properties and performances including hardness, Young's modulus, coating adhesion and abrasion resistance were systematically analyzed. In the current work, a simple self-cleaning test, which measures the extent of dirt accumulation and subsequent removal by water spray, was performed. The coatings with 15 wt.% loading of 10-20 nm silica particles show the best self-cleaning performance both before and after mechanical abrasion. The developed coating process is simple and can be easily scaled-up for large surfaces that require self-cleaning function.

Appearance of the minority dz2 surface state and disappearance of the image-potential state: Criteria for clean Fe(001)

NASA Astrophysics Data System (ADS)

Eibl, Christian; Schmidt, Anke B.; Donath, Markus

2012-10-01

The unoccupied surface electronic structure of clean and oxidized Fe(001) was studied with spin-resolved inverse photoemission and target current spectroscopy. For the clean surface, we detected a dz2 surface state with minority spin character just above the Fermi level, while the image-potential surface state disappears. The opposite is observed for the ordered p(1×1)O/Fe(001) surface: the dz2-type surface state is quenched, while the image-potential state shows up as a pronounced feature. This behavior indicates enhanced surface reflectivity at the oxidized surface. The appearance and disappearance of specific unoccupied surface states prove to be decisive criteria for a clean Fe(001) surface. In addition, enhanced spin asymmetry in the unoccupied states is observed for the oxidized surface. Our results have implications for the use of clean and oxidized Fe(001) films as spin-polarization detectors.

Low surface energy polymeric release coating for improved contact print lithography

NASA Astrophysics Data System (ADS)

Mancini, David P.; Resnick, Douglas J.; Gehoski, Kathleen A.; Popovich, Laura L.; Chang, Daniel

2002-03-01

Contact printing has been used for decades in many various lithography applications in the microelectronic industry. While vacuum contact printing processes offer sub-micron resolution and high throughput, they often suffer from some important drawbacks. One of the most common problems is degradation in both resolution and defect density which occurs when the same mask si used for multiple exposures without frequent mask cleans. This is largely due to the relatively high surface energy of both quartz and chrome and the tendency of most photoresists to adhere to these surfaces. As a result, when a mask and wafer are pressed into intimate contact, resist will tend to stick to the mask creating a defect on the wafer, effectively propagating defects to subsequent wafers. In this study, DuPont Teflon AF 1601S is used as a photomask coating and evaluated for its ability to act as a release agent and reduce defects while maintaining resolution for multiple exposures. Teflon AF is an amorphous, transparent, low surface energy, polymeric material that can be spin coated into a thin conformal film. Tests have shown that when using an uncoated mask in vacuum contact, resolution of 0.75 micrometers dense lines is severely degraded after less than 10 consecutive exposures. However, when the mask is coated, 0.75 micrometers dense lines were successfully resolved using vacuum contact for over 200 exposures without cleaning. In addition, it has been demonstrated that Teflon AF coatings impart to a mask a self-cleaning capability, since particles tend to stick to the photoresist rather than the mask. A coated mask, which was purposefully contaminated with particulates, resolved 0.75 micrometers dense lines on all but the first wafer of a series of 25 consecutive exposures. The patented mask releases layer process has successfully been demonstrated with a positive novolak resist. Additional data which describes the system chemistry, dilution and coating process, and film morphology are also presented.

Laser cleaning of the contaminations on the surface of tire mould

NASA Astrophysics Data System (ADS)

Ye, Yayun; Jia, Baoshen; Chen, Jing; Jiang, Yilan; Tang, Hongping; Wang, Haijun; Luan, Xiaoyu; Liao, Wei; Zhang, Chuanchao; Yao, Caizhen

2017-07-01

During the manufacturing of tires, surface pollutants on tire mould will lead to the production of unqualified tires. Tire moulds need to be regularly cleaned. Laser cleaning is recognized as a non-destructive, effective, precise and environmental friendly method. In this paper, laser cleaning was used to remove contaminants on tire mould surface. First, laser induced damage experiments were performed. The results showed that the roughness and hardness of the cast steel sample surface seldom changed under the energy range of 140.1-580.2 mJ laser irradiation 1 pulse and the energy range of 44.7-168.9 mJ laser irradiation 100 pulses. In the laser cleaning experiments, the cleaning thresholds and the optimal cleaning parameters were obtained. Results indicated that laser cleaning was safe and effective for tire mould contamination removal.

The successful of finite element to invent particle cleaning system by air jet in hard disk drive

NASA Astrophysics Data System (ADS)

Jai-Ngam, Nualpun; Tangchaichit, Kaitfa

2018-02-01

Hard Disk Drive manufacturing has faced very challenging with the increasing demand of high capacity drives for Cloud-based storage. Particle adhesion has also become increasingly important in HDD to gain more reliability of storage capacity. The ability to clean on surfaces is more complicated in removing such particles without damaging the surface. This research is aim to improve the particle cleaning in HSA by using finite element to develop the air flow model then invent the prototype of air cleaning system to remove particle from surface. Surface cleaning by air pressure can be applied as alternative for the removal of solid particulate contaminants that is adhering on a solid surface. These technical and economic challenges have driven the process development from traditional way that chemical solvent cleaning. The focus of this study is to develop alternative way from scrub, ultrasonic, mega sonic on surface cleaning principles to serve as a foundation for the development of new processes to meet current state-of-the-art process requirements and minimize the waste from chemical cleaning for environment safety.

Packaging system with cleaning channel and method of making the same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fang, Lu

A packaging structure and method for surface mount integrated circuits reduces electrochemical migration (ECM) problems by including one or more cleaning channels to effectively and efficiently remove flux residue that may otherwise remain lodged in gaps between the surface mount package and the printed circuit board. A cleaning channel may be formed along a bottom surface of the surface mount package (i.e., the surface facing the printed circuit board), or along a portion of a top surface of the printed circuit board. In either case, the inclusion of a cleaning channel enlarges the gap between the bottom surface of themore » surface mount package and the printed circuit board and creates a path for contaminants to be flushed out during a cleaning process.« less

First principles calculations of ceramics surfaces and interfaces: Examples from beta-silicon nitride and alpha-alumina

NASA Astrophysics Data System (ADS)

Dunn, Jennifer Synowczynski

The goal of this thesis was to use first principles calculations to provide a fundamental understanding at the atomistic level of the mechanisms (e.g. structural relaxations of ceramic surfaces/interfaces, charge transfer reactions, adsorption and dissociation phenomena, localized debonding) behind macroscopic behavior in ceramics (e.g. fracture toughness, corrosion, catalysis). This thesis includes the results from three independent Density Functional Theory (DFT) studies of beta-Si3N4 and alpha-Al2O 3. Due to the computational complexity of first principles calculations, the models in this thesis do not consider temperature or pressure effects and are limited to describing the behavior of systems containing less than 200 atoms. In future studies, these calculations can be used to train a reactive molecular dynamics force field (REAXFF) so that larger scale phenomena including temperature effects can be explicitly simulated. In the first study, the effect of over 30 dopants on the stability of the interface between beta-Si3N4 grains and the intergranular glassy SiON film (IGF) was investigated. The dopants chosen not only represented commonly known glass modifiers and sintering aides but also enabled us to search for dependencies based on atomic size and electronic orbital configuration. To ensure that the approximations used in our model captured the key physical phenomena occurring on the beta-Si3N4 (100) surface and at the Si3N4/ IGF interface, we compared to experimental data (i.e. High Angle Annual Dark Field-Scanning Transmission Electron Microscopy atomic positions and fracture toughness values (Mikijelj B., 2009)). We identified a computational metric (the interfacial stability factor S) which correlates with experimentally measured fracture toughness values. The interfacial stability factor S is defined as the binding energy of the doped system minus the binding energy of the undoped system, where the binding energy is the total energy of the system minus the sum of the energies of the constituent atoms. In the second study, we performed constrained geometry barrier calculations of the interaction of CO with the (001) beta-Si3N4 surface to answer the following questions: (1) Does the CO combustion product interact with the Si3N4 surface and if so, what is the mechanism? (2) Once adsorbed, can CO further dissociate into isolated surface active C and O species? (3) Is it more energetically favorable for C to diffuse into the bulk beta-Si3N4 or along its surface? and (4) What is the barrier to C diffusing into an amorphous SiO2 intergranular film? Our calculations indicated that CO spontaneously adsorbs to the (001) beta-Si 3N4 surface. However, at ambient temperatures, further dissociation into isolated surface adsorbed C and O species was not thermodynamically or kinetically feasible. The barrier to C diffusing interstitially 1A and 5A into the bulk crystalline lattice is 2.12 and 4.42 eV respectively for a defect free, clean surface. However, the barrier for C surface diffusion is much smaller, ˜ 0.87 eV. Therefore, we concluded that surface is rich in C which can diffuse to the Si3N4/SiO2 interface and contribute to chemical erosion near the grain boundary interface. In the final study, we created a DFT model to investigate the 'inverse spillover effect' that occurs during hydrogen combustion on catalytically active Pt clusters supported by alpha-Al2O3. Our results indicated that the dissociation of O2 was not thermodynamically favored on the alpha-Al2O3 surface. However, both H2 and H2O dissociated, forming hydroxyls with oxygen atoms in the second atomic layer. Once dissociated, the oxygen species could diffuse locally but encountered a large barrier to long-range surface diffusion in the absence of defects or other species. In contrast, the barrier to the long-range surface diffusion of hydrogen was modest under ideal conditions. We also identified several adsorption and dissociation products for Pt, Pt-O [ads] Pt3, O, H, O2, H2, and H 2O on the alpha-Al2O3 (0001) surface and described how these structures changed the surface reconstruction. Specifically, we concluded that the adsorption of molecular H2O, atomic Pt, and Pt trimers changed the termination for the alpha-Al2O3 (0001) surface from aluminum to oxygen terminated in the vicinity of the adsorption products. This should have a dramatic affect on catalytic activity and surface diffusion. We confirmed this for O surface diffusion near surface Al where the presence of atomic Pt decreased the diffusion barrier from 1.17 to 0.22 eV.

Self-cleaning efficiency of artificial superhydrophobic surfaces.

PubMed

Bhushan, Bharat; Jung, Yong Chae; Koch, Kerstin

2009-03-03

The hierarchical structured surface of the lotus (Nelumbo nucifera, Gaertn.) leaf provides a model for the development of biomimetic self-cleaning surfaces. On these water-repellent surfaces, water droplets move easily at a low inclination of the leaf and collect dirt particles adhering to the leaf surface. Flat hydrophilic and hydrophobic, nanostructured, microstructured, and hierarchical structured superhydrophobic surfaces were fabricated, and a systematic study of wettability and adhesion properties was carried out. The influence of contact angle hysteresis on self-cleaning by water droplets was studied at different tilt angles (TA) of the specimen surfaces (3 degrees for Lotus wax, 10 degrees for n-hexatriacontane, as well as 45 degrees for both types of surfaces). At 3 degrees and 10 degrees TA, no surfaces were cleaned by moving water applied onto the surfaces with nearly zero kinetic energy, but most particles were removed from hierarchical structured surfaces, and a certain amount of particles were captured between the asperities of the micro- and hierarchical structured surfaces. After an increase of the TA to 45 degrees (larger than the tilt angles of all structured surfaces), as usually used for industrial self-cleaning tests, all nanostructured surfaces were cleaned by water droplets moving over the surfaces followed by hierarchical and microstructures. Droplets applied onto the surfaces with some pressure removed particles residues and led to self-cleaning by a combination of sliding and rolling droplets. Geometrical scale effects were responsible for superior performance of nanostructured surfaces.

Environmentally compatible hand wipe cleaning solvents

NASA Technical Reports Server (NTRS)

Clayton, Catherine P.; Kovach, Michael P.

1995-01-01

Several solvents of environmental concern have previously been used for hand wipe cleaning of SRB surfaces, including 1,1,1-trichloroethane, perchloroethylene, toluene, xylene, and MEK. USBI determined the major types of surfaces involved, and qualification requirements of replacement cleaning agents. Nineteen environmentally compatible candidates were tested on 33 material substrates with 26 types of potential surface contaminants, involving over 7,000 individual evaluations. In addition to the cleaning performance evaluation, bonding, compatibility, and corrosion tests were conducted. Results showed that one cleaner was not optimum for all surfaces. In most instances, some of the candidates cleaned better than the 1,1,1-trichloroethane baseline control. Aqueous cleaners generally cleaned better, and were more compatible with nonmetallic materials, such as paints, plastics, and elastomers. Organic base cleaners were better on metal surfaces. Five cleaners have been qualified and are now being implemented in SRB hand wipe cleaning operations.

Solid Lubrication Fundamentals and Applications. Properties of Clean Surfaces: Adhesion, Friction, and Wear

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa

1998-01-01

This chapter presents the adhesion, friction, and wear behaviors of smooth, atomically clean surfaces of solid-solid couples, such as metal-ceramic couples, in a clean environment. Surface and bulk properties, which determine the adhesion, friction, and wear behaviors of solid-solid couples, are described. The primary emphasis is on the nature and character of the metal, especially its surface energy and ductility. Also, the mechanisms of friction and wear for clean, smooth surfaces are stated.

Controlled drive-in and precipitation of hydrogen during plasma hydrogenation of silicon using a thin compressively strained SiGe layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okba, F.; Departement Optique et Mecanique de Precision, Faculte des Sciences de l'Ingenieur, Universite Ferhat Abbas, Setif 19000; Cherkashin, N.

2010-07-19

We have quantitatively studied by transmission electron microscopy the growth kinetics of platelets formed during the continuous hydrogenation of a Si substrate/SiGe/Si heterostructure. We have evidenced and explained the massive transfer of hydrogen from a population of platelets initially generated in the upper Si layer by plasma hydrogenation towards a population of larger platelets located in the SiGe layer. We demonstrate that this type of process can be used not only to precisely localize the micro-cracks, then the fracture line at a given depth but also to 'clean' the top layer from pre-existing defects.

Examining factors that influence the effectiveness of cleaning antineoplastic drugs from drug preparation surfaces: a pilot study.

PubMed

Hon, Chun-Yip; Chua, Prescillia Ps; Danyluk, Quinn; Astrakianakis, George

2014-06-01

Occupational exposure to antineoplastic drugs has been documented to result in various adverse health effects. Despite the implementation of control measures to minimize exposure, detectable levels of drug residual are still found on hospital work surfaces. Cleaning these surfaces is considered as one means to minimize the exposure potential. However, there are no consistent guiding principles related to cleaning of contaminated surfaces resulting in hospitals to adopt varying practices. As such, this pilot study sought to evaluate current cleaning protocols and identify those factors that were most effective in reducing contamination on drug preparation surfaces. Three cleaning variables were examined: (1) type of cleaning agent (CaviCide®, Phenokil II™, bleach and chlorhexidine), (2) application method of cleaning agent (directly onto surface or indirectly onto a wipe) and (3) use of isopropyl alcohol after cleaning agent application. Known concentrations of antineoplastic drugs (either methotrexate or cyclophosphamide) were placed on a stainless steel swatch and then, systematically, each of the three cleaning variables was tested. Surface wipes were collected and quantified using high-performance liquid chromatography-tandem mass spectrometry to determine the percent residual of drug remaining (with 100% being complete elimination of the drug). No one single cleaning agent proved to be effective in completely eliminating all drug contamination. The method of application had minimal effect on the amount of drug residual. In general, application of isopropyl alcohol after the use of cleaning agent further reduced the level of drug contamination although measureable levels of drug were still found in some cases.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hegedus, Steven S.

An interdigitated back contact (IBC) Si wafer solar cell with deposited a-Si heterojunction (HJ) emitter and contacts is considered the ultimate single junction Si solar cell design. This was confirmed in 2014 by both Panasonic and Sharp Solar producing IBC-HJ cells breaking the previous record Si solar cell efficiency of 25%. But manufacturability at low cost is a concern for the complex IBC-HJ device structure. In this research program, our goals were to addressed the broad industry need for a high-efficiency c-Si cell that overcomes the dominant module cost barriers by 1) developing thin Si wafers synthesized by innovative, kerflessmore » techniques; 2) integrating laser-based processing into most aspects of solar cell fabrication, ensuring high speed and low thermal budgets ; 3) developing an all back contact cell structure compatible with thin wafers using a simplified, low-temperature fabrication process; and 4) designing the contact patterning to enable simplified module assembly. There were a number of significant achievements from this 3 year program. Regarding the front surface, we developed and applied new method to characterize critical interface recombination parameters including interface defect density Dit and hole and electron capture cross-section for use as input for 2D simulation of the IBC cell to guide design and loss analysis. We optimized the antireflection and passivation properties of the front surface texture and a-Si/a-SiN/a-SiC stack depositions to obtain a very low (< 6 mA/cm2) front surface optical losses (reflection and absorption) while maintaining excellent surface passivation (SRV<5 cm/s). We worked with kerfless wafer manufacturers to apply defect-engineering techniques to improve bulk minority-carrier lifetime of thin kerfless wafers by both reducing initial impurities during growth and developing post-growth gettering techniques. This led insights about the kinetics of nickel, chromium, and dislocations in PV-grade silicon and to achieving millisecond lifetimes in kerfless silicon materials. Laser fired contacts to n-Si were developed for the first time using a Al/Sb/Ti metal stack giving contact resistances < 5 mOhm-cm2 when fired through several different dielectric layers. A new 2 step laser+chemical etch isolation technique was developed using a sacrificial top coating which avoids laser damage to Si passivation. Regarding the heterojunction emitter, analysis of front FHJ (1D) and IBC (2D) cells with range of p-layer conditions found that a 2-stage high/low doped p-layer was optimum: the low doped region has lower defects giving higher Voc and the high doped region gave a better contact to the metal. A significant effort was spent studying the patterning process and its contribution to degradation of passivation and reproducibility. Several promising new cleaning, contact and deposition patterning and processing approaches were implemented leading to fabrication of several runs with cells having 19-20% efficiency which were stable over several months. This program resulted in the training and support of 12 graduate students, publication of 21 journal papers and 14 conference papers.« less

Active cleaning technique for removing contamination from optical surfaces in space

NASA Technical Reports Server (NTRS)

Shannon, R. L.; Gillette, R. B.; Cruz, G. A.

1973-01-01

An active cleaning technique for removing contaminants from optical surfaces in space was investigated with emphasis on the feasibility of using plasma exposure as a means of in-situ cleaning. The major work accomplished includes: (1) development of an in-situ reflectometer for use in conjunction with the contaminant film deposition/cleaning facility; (2) completion of Apollo Telescope Mount (ATM) filter treatment experiments to assess the effects of plasma exposure on the UV transmittance; (3) attempts to correlate the atomic oxygen flux with cleaning rate; (4) completion of in-situ butadien contamination/plasma cleaning/UV reflectance measurement experiments; (5) carbon cleaning experiments using various gases; (6) completion of silicone contamination/cleaning experiments; and (7) experiments conducted at low chamber pressures to determine cleaning rate distribution and contamination of surfaces adjacent to those being cleaned.

An assessment of cleaning and sampling methods for food-contact surfaces in premises preparing and selling high-risk foods.

PubMed Central

Tebbutt, G. M.

1991-01-01

The performance of agar-contact plates and an alginate-swab method for sampling food surfaces before and after cleaning was compared. Contact plates were more convenient, and were at least as sensitive as the swabbing method. To assess cleaning efficiency repeated sampling was carried out in selected premises, and several cleaning methods were introduced for trial periods. Some surfaces, notably wood and polypropylene, were particularly difficult to clean. For these scrubbing with a nylon brush was the best method. Other surfaces were more easily cleaned, and generally the methods introduced as part of this study were better than the original method used in the premises. Paper proved to be unpopular, and cleaning solutions applied with it did no better than those cleaned with a multiuse cloth kept soaking in a detergent and hypochlorite solution. PMID:1850362

Effect of 100 MeV Ag+7 ion irradiation on the bulk and surface magnetic properties of Co-Fe-Si thin films

NASA Astrophysics Data System (ADS)

Hysen, T.; Geetha, P.; Al-Harthi, Salim; Al-Omari, I. A.; Lisha, R.; Ramanujan, R. V.; Sakthikumar, D.; Avasthi, D. K.; Anantharaman, M. R.

2014-12-01

Thin films of Co-Fe-Si were vacuum evaporated on pre-cleaned float glass substrates employing thermal evaporation. The films were subsequently irradiated with 100 MeV Ag+7 ions at fluences of 1×1011, 1×1012 and 1×1013 ions/cm2. The pristine and irradiated samples were subjected to surface analysis using Atomic Force Microscopy (AFM), Vibrating Sample Magnetometry (VSM) and Magneto Optic Kerr Effect (MOKE) measurements. The as deposited film has a root mean square roughness (Rq) of 8.9 nm and an average roughness of (Ra) 5.6 nm. Irradiation of the as deposited films with 100 MeV Ag7+ ions modifies the surface morphology. Irradiating with ions at fluences of 1×1011 ions/cm2 smoothens the mesoscopic hill-like structures, and then, at 1×1012 ions/cm2 new surface structures are created. When the fluence is further increased to 1×1013 ions/cm2 an increase in the surface roughness is observed. The MOKE loop of as prepared film indicated a squareness ratio of 0.62. As the film is irradiated with fluences of 1×1011 ions/cm2, 1×1012 ions/cm2 and 1×1013 ions/cm2 the squareness ratio changes to 0.76, 0.8 and 0.86 respectively. This enhancement in squareness ratio towards 1 is a typical feature when the exchange interaction starts to dominates the inherent anisotropies in the system. The variation in surface magnetisation is explained based on the variations in surface roughness with swift heavy ion (SHI) irradiation.

Are Diatoms "Green" Aluminosilicate Synthesis Microreactors for Future Catalyst Production?

PubMed

Köhler, Lydia; Machill, Susanne; Werner, Anja; Selzer, Carolin; Kaskel, Stefan; Brunner, Eike

2017-12-16

Diatom biosilica may offer an interesting perspective in the search for sustainable solutions meeting the high demand for heterogeneous catalysts. Diatomaceous earth (diatomite), i.e., fossilized diatoms, is already used as adsorbent and carrier material. While diatomite is abundant and inexpensive, freshly harvested and cleaned diatom cell walls have other advantages, with respect to purity and uniformity. The present paper demonstrates an approach to modify diatoms both in vivo and in vitro to produce a porous aluminosilicate that is serving as a potential source for sustainable catalyst production. The obtained material was characterized at various processing stages with respect to morphology, elemental composition, surface area, and acidity. The cell walls appeared normal without morphological changes, while their aluminum content was raised from the molar ratio n (Al): n (Si) 1:600 up to 1:50. A specific surface area of 55 m²/g was measured. The acidity of the material increased from 149 to 320 µmol NH₃/g by ion exchange, as determined by NH₃ TPD. Finally, the biosilica was examined by an acid catalyzed test reaction, the alkylation of benzene. While the cleaned cell walls did not catalyze the reaction at all, and the ion exchanged material was catalytically active. This demonstrates that modified biosilica does indeed has potential as a basis for future catalytically active materials.

Conservation of Monuments by a Three-Layered Compatible Treatment of TEOS-Nano-Calcium Oxalate Consolidant and TEOS-PDMS-TiO₂ Hydrophobic/Photoactive Hybrid Nanomaterials.

PubMed

Kapridaki, Chrysi; Verganelaki, Anastasia; Dimitriadou, Pipina; Maravelaki-Kalaitzaki, Pagona

2018-04-27

In the conservation of monuments, research on innovative nanocomposites with strengthening, hydrophobic and self-cleaning properties have attracted the interest of the scientific community and promising results have been obtained as a result. In this study, stemming from the need for the compatibility of treatments in terms of nanocomposite/substrate, a three-layered compatible treatment providing strengthening, hydrophobic, and self-cleaning properties is proposed. This conservation approach was implemented treating lithotypes and mortars of different porosity and petrographic characteristics with a three-layered treatment comprising: (a) a consolidant, tetraethoxysilane (TEOS)-nano-Calcium Oxalate; (b) a hydrophobic layer of TEOS-polydimethylsiloxane (PDMS); and (c) a self-cleaning layer of TiO₂ nanoparticles from titanium tetra-isopropoxide with oxalic acid as hole-scavenger. After the three-layered treatment, the surface hydrophobicity was improved due to PDMS and nano-TiO₂ in the interface substrate/atmosphere, as proven by the homogeneity and the Si⁻O⁻Ti hetero-linkages of the blend protective/self-cleaning layers observed by Scanning Electron Microscope (SEM), Transmission Electron Microscope (TEM) and Fourier-Transform Infrared Spectroscopy (FTIR). The aesthetic, microstructural, mechanical and permeabile compatibility of the majority of treated substrates ranged within acceptability limits. The improved photocatalytic activity, as proven by the total discoloration of methylene blue in the majority of cases, was attributed to the anchorage of TiO₂, through the Si⁻O⁻Ti bonds to SiO₂, in the interface with the atmosphere, thus enhancing photoactivation.

Self-cleaning of superhydrophobic surfaces by spontaneously jumping condensate drops

NASA Astrophysics Data System (ADS)

Wisdom, Katrina; Watson, Jolanta; Watson, Gregory; Chen, Chuan-Hua

2012-11-01

The self-cleaning function of superhydrophobic surfaces is conventionally attributed to the removal of contaminating particles by impacting or rolling water droplets, which implies the action of external forces such as gravity. Here, we demonstrate a new self-cleaning mechanism, whereby condensate drops spontaneously jump upon coalescence on a superhydrophobic surface, and the merged drop self-propels away from the surface along with the contaminants. The jumping-condensate mechanism is shown to autonomously clean superhydrophobic cicada wings, where the contaminating particles cannot be removed by external wind flow. Our findings offer new insights for the development of self-cleaning materials.

Si-compatible cleaning process for graphene using low-density inductively coupled plasma.

PubMed

Lim, Yeong-Dae; Lee, Dae-Yeong; Shen, Tian-Zi; Ra, Chang-Ho; Choi, Jae-Young; Yoo, Won Jong

2012-05-22

We report a novel cleaning technique for few-layer graphene (FLG) by using inductively coupled plasma (ICP) of Ar with an extremely low plasma density of 3.5 × 10(8) cm(-3). It is known that conventional capacitively coupled plasma (CCP) treatments destroy the planar symmetry of FLG, giving rise to the generation of defects. However, ICP treatment with extremely low plasma density is able to remove polymer resist residues from FLG within 3 min at a room temperature of 300 K while retaining the carbon sp(2)-bonding of FLG. It is found that the carrier mobility and charge neutrality point of FLG are restored to their pristine defect-free state after the ICP treatment. Considering the application of graphene to silicon-based electronic devices, such a cleaning method can replace thermal vacuum annealing, electrical current annealing, and wet-chemical treatment due to its advantages of being a low-temperature, large-area, high-throughput, and Si-compatible process.

Applications of novel effects derived from Si ingot growth inside Si melt without contact with crucible wall using noncontact crucible method to high-efficiency solar cells

NASA Astrophysics Data System (ADS)

Nakajima, Kazuo; Ono, Satoshi; Kaneko, Yuzuru; Murai, Ryota; Shirasawa, Katsuhiko; Fukuda, Tetsuo; Takato, Hidetaka; Jensen, Mallory A.; Youssef, Amanda; Looney, Erin E.; Buonassisi, Tonio; Martel, Benoit; Dubois, Sèbastien; Jouini, Anis

2017-06-01

The noncontact crucible (NOC) method was proposed for obtaining Si single bulk crystals with a large diameter and volume using a cast furnace and solar cells with high conversion efficiency and yield. This method has several novel characteristics that originate from its key feature that ingots can be grown inside a Si melt without contact with a crucible wall. Si ingots for solar cells were grown by utilizing the merits resulting from these characteristics. Single ingots with high quality were grown by the NOC method after furnace cleaning, and the minority carrier lifetime was measured to investigate reduction of the number of impurities. A p-type ingot with a convex growth interface in the growth direction was also grown after furnace cleaning. For p-type solar cells prepared using wafers cut from the ingot, the highest and average conversion efficiencies were 19.14% and 19.0%, respectively, which were obtained using the same solar cell structure and process as those employed to obtain a conversion efficiency of 19.1% for a p-type Czochralski (CZ) wafer. Using the cast furnace, solar cells with a conversion efficiency and yield as high as those of CZ solar cells were obtained by the NOC method.

IV INTERNATIONAL CONFERENCE ON ATOM AND MOLECULAR PULSED LASERS (AMPL'99): Surface oxide removal by a XeCl laser for decontamination

NASA Astrophysics Data System (ADS)

Sentis, M. L.; Delaporte, Ph; Marine, W.; Uteza, O.

2000-06-01

The laser ablation performed with an automated excimer XeCl laser unit is used for large surface cleaning. The study focuses on metal surfaces that are oxidised and are representative of contaminated surfaces with radionuclides in a context of nuclear power plant maintenance. The unit contains an XeCl laser, the beam delivery system, the particle collection cell, and the system for real-time control of cleaning processes. The interaction of laser radiation with a surface is considered, in particular, the surface damage caused by cleaning radiation. The beam delivery system consists of an optical fibre bundle of 5 m long and allows delivering 150 W at 308 nm for laser surface cleaning. The cleaning process is controlled by analysing in real time the plasma electric field evolution. The system permits the cleaning of 2 to 6 m2 h-1 of oxides with only slight substrate modifications.

Alternatives to SiOx for protective scan mirror coatings in remote sensing instruments

NASA Astrophysics Data System (ADS)

MacDonald, Michael E.

1999-09-01

Mirrors in remote sensing instruments require durable dielectric coatings, both to prevent oxidation of the reflective surface and to protect it during cleaning. IR absorption bands within widely-used SiOx coatings produce scene radiance and instrument background variations as a function of scan mirror angle which motivate the search for possible substitute materials. In this work several candidate coatings are evaluated including CeF3, HfO2, MgF2 SrF2, and Y2O3. This evaluation consists of reflectance, adhesion, and durability measurements of mirrors with an aluminum reflective surface over-coated with these materials. S-polarized and P- polarized reflectance measurements are presented between 2 and 20 micrometers for incidence angles between 40 and 50 degrees. This angular range is sufficient to scan the earth disk from geostationary orbit. Additional measurements at 45 degrees incidence are presented between 2 and 55 micrometers , covering the IR wavelength range of interest for earth radiation budget sensors. Comparisons are drawn with measurements of scan- mirror witness samples from the imaging and sounding instruments used in the Geostationary Operational Environmental Satellite (GOES). These witness samples exhibit reflectance variations arising from IR absorption bands in the SiOx protective coatings used in these mirrors. The spectral characteristics of several of the alternate materials are found to be quite attractive, however durable coatings of some of these materials require elevated deposition temperature which are incompatible with the nickel-coated beryllium scan mirror substrate construction used in GOES. This work present the achievable reflectance and durability of these alternate dielectric protective coatings at the deposition temperature constraints imposed by the scan mirror substrate. The prospects for substituting one of these coatings for SiOx are evaluated, and contrasted with the capability of radiometric calibration techniques to deal with the reflectance variations produced by SiOx coatings.

Wafer-Scale Hierarchical Nanopillar Arrays Based on Au Masks and Reactive Ion Etching for Effective 3D SERS Substrate.

PubMed

Men, Dandan; Wu, Yingyi; Wang, Chu; Xiang, Junhuai; Yang, Ganlan; Wan, Changjun; Zhang, Honghua

2018-02-04

Two-dimensional (2D) periodic micro/nanostructured arrays as SERS substrates have attracted intense attention due to their excellent uniformity and good stability. In this work, periodic hierarchical SiO₂ nanopillar arrays decorated with Ag nanoparticles (NPs) with clean surface were prepared on a wafer-scale using monolayer Au NP arrays as masks, followed by reactive ion etching (RIE), depositing Ag layer and annealing. For the prepared SiO₂ nanopillar arrays decorated with Ag NPs, the size of Ag NPs was tuned from ca. 24 to 126 nanometers by controlling the deposition thickness of Ag film. Importantly, the SiO₂ nanopillar arrays decorated with Ag NPs could be used as highly sensitive SERS substrate for the detection of 4-aminothiophenol (4-ATP) and rhodamine 6G (R6G) due to the high loading of Ag NPs and a very uniform morphology. With a deposition thickness of Ag layer of 30 nm, the SiO₂ nanopillar arrays decorated with Ag NPs exhibited the best sensitive SERS activity. The excellent SERS performance of this substrate is mainly attributed to high-density "hotspots" derived from nanogaps between Ag NPs. Furthermore, this strategy might be extended to synthesize other nanostructured arrays with a large area, which are difficult to be prepared only via conventional wet-chemical or physical methods.

Evaluation of surface roughness of enamel after various bonding and clean-up procedures on enamel bonded with three different bonding agents: An in-vitro study

PubMed Central

Goel, Amit; Singh, Atul; Gupta, Tarun

2017-01-01

Background The purpose of this study was to analyze and compare the enamel surface roughness before bonding and after debonding, to find correlation between the adhesive remnant index and its effect on enamel surface roughness and to evaluate which clean-up method is most efficient to provide a smoother enamel surface. Material and Methods 135 premolars were divided into 3 groups containing 45 premolars in each group. Group I was bonded by using moisture insensitive primer, Group II by using conventional orthodontic adhesive and Group III by using self-etching primer. Each group was divided into 3 sub-groups on the basis of type of clean-up method applied i,e scaling followed by polishing, tungsten carbide bur and Sof-Lex disc. Enamel surface roughness was measured and compared before bonding and after clean-up. Results Evaluation of pre bonding and post clean-up enamel surface roughness (Ra value) with the t test showed that Post clean-up Ra values were greater than Pre bonding Ra values in all the groups except in teeth bonded with self-etching primer cleaned with Sof-Lex disc. Reliability of ARI score taken at different time interval tested with Kruskal Wallis test suggested that all the readings were reliable. Conclusions No clean-up procedure was able to restore the enamel to its original smoothness. Self-etching primer and Sof-Lex disc clean-up method combination restored the enamel surface roughness (Ra value) closest to its pre-treatment value. Key words:Enamel surface roughness, clean-up method, adhesive remnant index. PMID:28512535

[Surface disinfection in nursing homes--what is really happening? Study of control success in three Duisburg nursing homes].

PubMed

Martin, U; Sonntag, A-K; Neuhaus, B; Karch, H

2004-10-01

The effectiveness of cleaning and disinfection of environmental surfaces was evaluated in three nursing homes using bacteriological monitoring. Samples from inmates (nose, throat and wounds) and surface cleaning equipment were also taken. Cleaning solutions, disinfectants and cleaning clothes were found to be highly contaminated in two of three institutions. Referring to the surfaces in some cases disinfection didn't reduce bacterial colony counts and seeded MRSA as a potential pathogen in one nursing home. Six MRSA-positive inmates and identical strains were registered in the environment. MRSA can be used as a marker organism to demonstrate effectiveness of cleaning. To achieve further improvement bacteriological monitoring can help in focussing special cleaning and disinfection related problems.

Effectiveness of Surface Cleaning and Disinfection in a Brazilian Healthcare Facility.

PubMed

Santos-Junior, Aires G; Ferreira, Adriano M; Frota, Oleci P; Rigotti, Marcelo A; Barcelos, Larissa da S; Lopes de Sousa, Alvaro Francisco; de Andrade, Denise; Guerra, Odanir G; R Furlan, Mara C

2018-01-01

Failures in the processes of cleaning and disinfecting health service surfaces may result in the spread and transfer of pathogens that are often associated with healthcare-related infections and outbreaks. To assess the effectiveness of environmental surface cleaning and disinfection in a hospital clinic. The study was conducted in a nursing ward with 45 beds. A total of 80 samples from five high-touch surfaces were evaluated before and after cleaning and disinfection, using the following methods: visual inspection, adenosine triphosphate bioluminescence assay, aerobic colony count, Staphylococcus aureus colony count, and evaluation of resistance to methicillin. The data analysis used nonparametric comparative and correlative tests to observe any differences in the pre- and post- cleaning and disinfection results for the surfaces assessed. Effective cleaning and disinfection had a significant effect on only two surfaces when measured for the presence of adenosine triphosphate, the inner bathroom door handle ( p =0.007) and the toilet bowl ( p =0.01). When evaluated for Staphylococcus aureus colony count, the toilet flush handle also demonstrated a significant effect ( p =0.04). The effectiveness of cleaning and disinfection of the surfaces tested was not satisfactory. An educational intervention is recommended for the cleaning and disinfection staff and the nursing team at the healthcare facility. The data in the study revealed that daily hospital cleaning and disinfection in the sampled sites are not sufficient in medical and surgical wards. Hospital cleanliness must be reevaluated from the point of view of materials, such as an adequate supply of clean cloths, in addition to establishing more precise cleanliness protocols and accurate monitoring systems.

Synthesis, X-ray structure, and hydrolytic chemistry of the high potent antiviral polyniobotungstate A-[alpha]-[Si2Nb6W18O77]8–

Treesearch

Gyu-Shik Kim; Huadong Zeng; Jeffrey T. Rhule; Ira A. Weinstock; Craig L. Hill

1999-01-01

Potently antiviral polyniobotungstates have been structurally characterized; the dimer A-[alpha]-[Si2Nb6W18O77]8– cleaves cleanly to the monomer A-[alpha]-[SiNb3W9O40]7– within 1 min in aqueous solution buffered at physiological (neutral) pH establishing that the monomer and not the dimer is pharmacologically relevant.

Overview of several applications of chemical downstream etching (CDE) for IC manufacturing: advantages and drawbacks versus WET processes

NASA Astrophysics Data System (ADS)

de Buttet, Côme; Prevost, Emilie; Campo, Alain; Garnier, Philippe; Zoll, Stephane; Vallier, Laurent; Cunge, Gilles; Maury, Patrick; Massin, Thomas; Chhun, Sonarith

2017-03-01

Today the IC manufacturing faces lots of problematics linked to the continuous down scaling of printed structures. Some of those issues are related to wet processing, which are often used in the IC manufacturing flow for wafer cleaning, material etching and surface preparation. In the current work we summarize the limitations for the next nodes of wet processing such as metallic contaminations, wafer charging, corrosion and pattern collapse. As a replacement, we promoted the isotropic chemical dry etching (CDE) which is supposed to fix all the above drawbacks. Etching steps of SI3N4 layers were evaluated in order to prove the interest of such technique.

In situ/non-contact superfluid density measurement apparatus

NASA Astrophysics Data System (ADS)

Nam, Hyoungdo; Su, Ping-Hsang; Shih, Chih-Kang

2018-04-01

We present a double-coil apparatus designed to operate with in situ capability, which is strongly desired for superconductivity studies on recently discovered two-dimensional superconductors. Coupled with a scanning tunneling microscope, the study of both local and global superconductivity [for superconducting gap and superfluid density (SFD), respectively] is possible on an identical sample without sample degradations due to damage, contamination, or oxidation in an atmosphere. The performance of the double-coil apparatus was tested on atomically clean surfaces of non-superconducting Si(111)-7 × 7 and on superconducting films of 100 nm-thick Pb and 1.4 nm-ultrathin Pb. The results clearly show the normal-to-superconductor phase transition for Pb films with a strong SFD.

Effect of the Chemical State of the Surface on the Relaxation of the Surface Shell Atoms in SiC and GaN Nanocrystals

NASA Technical Reports Server (NTRS)

Palosz, B.; Grzanka, E.; Stelmakh, S.; Pielaszek, R.; Bismayer, U.; Weber, H. P.; Janik, J. F.; Palosz, W.; Curreri, Peter A. (Technical Monitor)

2002-01-01

The effect of the chemical state of the surface of nanoparticles on the relaxation in the near-surface layer was examined using the concept of the apparent lattice parameter (alp) determined for different diffraction vectors Q. The apparent lattice parameter is a lattice parameter determined either from an individual Bragg reflection, or from a selected region of the diffraction pattern. At low diffraction vectors the Bragg peak positions are affected mainly by the structure of the near-surface layer, while at high Q-values only the interior of the nano-grain contributes to the diffraction pattern. Following the measurements on raw (as prepared) powders we investigated powders cleaned by annealing at 400C under vacuum, and the same powders wetted with water. Theoretical alp-Q plots showed that the structure of the surface layer depends on the sample treatment. Semi-quantitative analysis based on the comparison of the experimental and theoretical alp-Q plots was performed. Theoretical alp-Q relations were obtained from the diffraction patterns calculated for models of nanocrystals with a strained surface layer using the Debye functions.

Life-cycle nitrogen trifluoride emissions from photovoltaics.

PubMed

Fthenakis, Vasilis; Clark, Daniel O; Moalem, Mehran; Chandler, Phil; Ridgeway, Robert G; Hulbert, Forrest E; Cooper, David B; Maroulis, Peter J

2010-11-15

Amorphous- and nanocrystalline-silicon thin-film photovoltaic modules are made in high-throughput manufacturing lines that necessitate quickly cleaning the reactor. Using NF₃, a potent greenhouse gas, as the cleaning agent triggered concerns as recent reports reveal that the atmospheric concentrations of this gas have increased significantly. We quantified the life-cycle emissions of NF₃ in photovoltaic (PV) manufacturing, on the basis of actual measurements at the facilities of a major producer of NF₃ and of a manufacturer of PV end-use equipment. From these, we defined the best practices and technologies that are the most likely to keep worldwide atmospheric concentrations of NF₃ at very low radiative forcing levels. For the average U.S. insolation and electricity-grid conditions, the greenhouse gas (GHG) emissions from manufacturing and using NF₃ in current PV a-Si and tandem a-Si/nc-Si facilities add 2 and 7 g CO₂(eq)/kWh, which can be displaced within the first 1-4 months of the PV system life.

Film growth, adsorption and desorption kinetics of indigo on SiO2

PubMed Central

Scherwitzl, Boris; Resel, Roland; Winkler, Adolf

2015-01-01

Organic dyes have recently been discovered as promising semiconducting materials, attributable to the formation of hydrogen bonds. In this work, the adsorption and desorption behavior, as well as thin film growth was studied in detail for indigo molecules on silicon dioxide with different substrate treatments. The material was evaporated onto the substrate by means of physical vapor deposition under ultra-high vacuum conditions and was subsequently studied by Thermal Desorption Spectroscopy (TDS), Auger Electron Spectroscopy, X-Ray Diffraction, and Atomic Force Microscopy. TDS revealed initially adsorbed molecules to be strongly bonded on a sputter cleaned surface. After further deposition a formation of dimers is suggested, which de-stabilizes the bonding mechanism to the substrate and leads to a weakly bonded adsorbate. The dimers are highly mobile on the surface until they get incorporated into energetically favourable three-dimensional islands in a dewetting process. The stronger bonding of molecules within those islands could be shown by a higher desorption temperature. On a carbon contaminated surface no strongly bonded molecules appeared initially, weakly bonded monomers rather rearrange into islands at a surface coverage that is equivalent to one third of a monolayer of flat-lying molecules. The sticking coefficient was found to be unity on both substrates. The desorption energies from carbon covered silicon dioxide calculated to 1.67 ± 0.05 eV for multilayer desorption from the islands and 0.84 ± 0.05 eV for monolayer des orption. Corresponding values for desorption from a sputter cleaned surface are 1.53 ± 0.05 eV for multilayer and 0.83 ± 0.05 eV for monolayer desorption. PMID:24832297

Film growth, adsorption and desorption kinetics of indigo on SiO{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scherwitzl, Boris, E-mail: b.scherwitzl@tugraz.at; Resel, Roland; Winkler, Adolf

2014-05-14

Organic dyes have recently been discovered as promising semiconducting materials, attributable to the formation of hydrogen bonds. In this work, the adsorption and desorption behavior, as well as thin film growth was studied in detail for indigo molecules on silicon dioxide with different substrate treatments. The material was evaporated onto the substrate by means of physical vapor deposition under ultra-high vacuum conditions and was subsequently studied by Thermal Desorption Spectroscopy (TDS), Auger Electron Spectroscopy, X-Ray Diffraction, and Atomic Force Microscopy. TDS revealed initially adsorbed molecules to be strongly bonded on a sputter cleaned surface. After further deposition a formation ofmore » dimers is suggested, which de-stabilizes the bonding mechanism to the substrate and leads to a weakly bonded adsorbate. The dimers are highly mobile on the surface until they get incorporated into energetically favourable three-dimensional islands in a dewetting process. The stronger bonding of molecules within those islands could be shown by a higher desorption temperature. On a carbon contaminated surface no strongly bonded molecules appeared initially, weakly bonded monomers rather rearrange into islands at a surface coverage that is equivalent to one third of a monolayer of flat-lying molecules. The sticking coefficient was found to be unity on both substrates. The desorption energies from carbon covered silicon dioxide calculated to 1.67 ± 0.05 eV for multilayer desorption from the islands and 0.84 ± 0.05 eV for monolayer desorption. Corresponding values for desorption from a sputter cleaned surface are 1.53 ± 0.05 eV for multilayer and 0.83 ± 0.05 eV for monolayer desorption.« less

Film growth, adsorption and desorption kinetics of indigo on SiO2.

PubMed

Scherwitzl, Boris; Resel, Roland; Winkler, Adolf

2014-05-14

Organic dyes have recently been discovered as promising semiconducting materials, attributable to the formation of hydrogen bonds. In this work, the adsorption and desorption behavior, as well as thin film growth was studied in detail for indigo molecules on silicon dioxide with different substrate treatments. The material was evaporated onto the substrate by means of physical vapor deposition under ultra-high vacuum conditions and was subsequently studied by Thermal Desorption Spectroscopy (TDS), Auger Electron Spectroscopy, X-Ray Diffraction, and Atomic Force Microscopy. TDS revealed initially adsorbed molecules to be strongly bonded on a sputter cleaned surface. After further deposition a formation of dimers is suggested, which de-stabilizes the bonding mechanism to the substrate and leads to a weakly bonded adsorbate. The dimers are highly mobile on the surface until they get incorporated into energetically favourable three-dimensional islands in a dewetting process. The stronger bonding of molecules within those islands could be shown by a higher desorption temperature. On a carbon contaminated surface no strongly bonded molecules appeared initially, weakly bonded monomers rather rearrange into islands at a surface coverage that is equivalent to one third of a monolayer of flat-lying molecules. The sticking coefficient was found to be unity on both substrates. The desorption energies from carbon covered silicon dioxide calculated to 1.67 ± 0.05 eV for multilayer desorption from the islands and 0.84 ± 0.05 eV for monolayer desorption. Corresponding values for desorption from a sputter cleaned surface are 1.53 ± 0.05 eV for multilayer and 0.83 ± 0.05 eV for monolayer desorption.

Surface characterization of InP trenches embedded in oxide using scanning probe microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mannarino, Manuel, E-mail: manuel.mannarino@imec.be, E-mail: manuelmannarino@gmail.com; Chintala, Ravi; Vandervorst, Wilfried

2015-12-14

Metrology for structural and electrical analyses at device level has been identified as one of the major challenges to be resolved for the sub-14 nm technology nodes. In these advanced nodes, new high mobility semiconductors, such as III–V compounds, are grown in narrow trenches on a Si substrate. Probing the nature of the defects, the defect density, and the role of processing steps on the surface of such structures are prime metrology requirements. In order to enable defect analysis on a (III–V) surface, a proper sample preparation for oxide removal is of primary importance. In this work, the effectiveness of differentmore » chemical cleanings and thermal annealing procedures is investigated on both blanket InP and oxide embedded InP trenches by means of scanning probe microscopy techniques. It is found that the most effective approach is a combination of an HCl-based chemical cleaning combined with a low-temperature thermal annealing leading to an oxide free surface with atomically flat areas. Scanning tunneling microscopy (STM) has been the preferred method for such investigations on blanket films due to its intrinsic sub-nm spatial resolution. However, its application on oxide embedded structures is non-trivial. To perform STM on the trenches of interest (generally <20 nm wide), we propose a combination of non-contact atomic force microscopy and STM using the same conductive atomic force microscopy tip Our results prove that with these procedures, it is possible to perform STM in narrow InP trenches showing stacking faults and surface reconstruction. Significant differences in terms of roughness and terrace formation are also observed between the blanket and the oxide embedded InP.« less

Characterization of contaminant removal by an optical strip material

NASA Astrophysics Data System (ADS)

Hamilton, James P.; Frigo, S. P.; Caroll, Brenden J.; Assoufidyen, L.; Lewis, Matthew S.; Cook, Russell E.; de Carlo, F.

2001-03-01

Department of Chemistry and Engineering Physics, University of Wisconsin-Platteville, Platteville, WI 53818 Advanced Photon Source, X-Ray Facilities Division, Argonne National Laboratory, Advanced Photon Source, User Program Division, Argonne National Laboratory, *Electron Microscopy Center, Materials Science Division, Argonne National Laboratory, Argonne National Laboratory, 9700 S. Cass Ave., Argonne IL 60439-4856 USA A novel optical strip coating material, Opticlean, has been shown to safely remove fingerprints, particles and contamination from a variety of optical surfaces including coated glass, Si and first surface mirrors. Contaminant removal was monitored by Nomarski, Atomic Force and Scanning Electron Microscopy. Sub-micron features on diffraction gratings and silicon wafers were also cleaned without leaving light scattering particles on the surface. **This work was supported in part by the U.S. Department of Energy, Basic Energy Sciences-Materials Sciences, under contract no. W-31-109-ENG-38. The authors acknowledge the support and facilities provided by the Advanced Photon Source and the Electron Microscopy Center at Argonne National Laboratory.

Efficiency of surface cleaning by a glow discharge for plasma spraying coating

NASA Astrophysics Data System (ADS)

Kadyrmetov, A. M.; Kashapov, N. F.; Sharifullin, S. N.; Saifutdinov, A. I.; Fadeev, S. A.

2016-06-01

The article presents the results of experimental studies of the quality of cleaning steel surfaces by a glow discharge for plasma spraying. Shows the results of measurements of the angle of surface wetting and bond strength of the plasma coating to the surface treated. The dependence of the influence of the glow discharge power, chamber pressure, distance between the electrodes and the processing time of the surface on cleaning efficiency. Optimal fields of factors is found. It is shown increase joint strength coating and base by 30-80% as a result of cleaning the substrate surface by a glow discharge plasma spraying.

Cleaning with Bulk Nanobubbles.

PubMed

Zhu, Jie; An, Hongjie; Alheshibri, Muidh; Liu, Lvdan; Terpstra, Paul M J; Liu, Guangming; Craig, Vincent S J

2016-11-01

The electrolysis of aqueous solutions produces solutions that are supersaturated in oxygen and hydrogen gas. This results in the formation of gas bubbles, including nanobubbles ∼100 nm in size that are stable for ∼24 h. These aqueous solutions containing bubbles have been evaluated for cleaning efficacy in the removal of model contaminants bovine serum albumin and lysozyme from surfaces and in the prevention of the fouling of surfaces by these same proteins. Hydrophilic and hydrophobic surfaces were investigated. It is shown that nanobubbles can prevent the fouling of surfaces and that they can also clean already fouled surfaces. It is also argued that in practical applications where cleaning is carried out rapidly using a high degree of mechanical agitation the role of cleaning agents is not primarily in assisting the removal of soil but in suspending the soil that is removed by mechanical action and preventing it from redepositing onto surfaces. This may also be the primary mode of action of nanobubbles during cleaning.

Rare earth element scavenging in seawater

NASA Astrophysics Data System (ADS)

Byrne, Robert H.; Kim, Ki-Hyun

1990-10-01

Examinations of rare earth element (REE) adsorption in seawater, using a variety of surface-types, indicated that, for most surfaces, light rare earth elements (LREEs) are preferentially adsorbed compared to the heavy rare earths (HREEs). Exceptions to this behavior were observed only for silica phases (glass surfaces, acid-cleaned diatomaceous earth, and synthetic SiO 2). The affinity of the rare earths for surfaces can be strongly affected by thin organic coatings. Glass surfaces which acquired an organic coating through immersion in Tampa Bay exhibited adsorptive behavior typical of organic-rich, rather than glass, surfaces. Models of rare earth distributions between seawater and carboxylate-rich surfaces indicate that scavenging processes which involve such surfaces should exhibit a strong dependence on pH and carbonate complexation. Scavenging models involving carboxylate surfaces produce relative REE abundance patterns in good general agreement with observed shale-normalized REE abundances in seawater. Scavenging by carboxylate-rich surfaces should produce HREE enrichments in seawater relative to the LREEs and may produce enrichments of lanthanum relative to its immediate trivalent neighbors. Due to the origin of distribution coefficients as a difference between REE solution complexation (which increases strongly with atomic number) and surface complexation (which apparently also increases with atomic number) the relative solution abundance patterns of the REEs produced by scavenging reactions can be quite complex.

Coating of 6028 Aluminum Alloy Using Aluminum Piston Alloy and Al-Si Alloy-Based Nanocomposites Produced by the Addition of Al-Ti5-B1 to the Matrix Melt

NASA Astrophysics Data System (ADS)

El-Labban, Hashem F.; Abdelaziz, M.; Mahmoud, Essam R. I.

2014-10-01

The Al-12 pctSi alloy and aluminum-based composites reinforced with TiB2 and Al3Ti intermetallics exhibit good wear resistance, strength-to-weight ratio, and strength-to-cost ratio when compared to equivalent other commercial Al alloys, which make them good candidates as coating materials. In this study, structural AA 6028 alloy is used as the base material. Four different coating materials were used. The first one is Al-Si alloy that has Si content near eutectic composition. The second, third, and fourth ones are Al-6 pctSi-based reinforced with TiB2 and Al3Ti nano-particles produced by addition of Al-Ti5-B1 master alloy with different weight percentages (1, 2, and 3 pct). The coating treatment was carried out with the aid of GTAW process. The microstructures of the base and coated materials were investigated using optical microscope and scanning electron microscope equipped with EDX analyzer. Microhardness of the base material and the coated layer were evaluated using a microhardness tester. GTAW process results in almost sound coated layer on 6028 aluminum alloy with the used four coating materials. The coating materials of Al-12 pct Si alloy resulted in very fine dendritic Al-Si eutectic structure. The interface between the coated layer and the base metal was very clean. The coated layer was almost free from porosities or other defects. The coating materials of Al-6 pct Si-based mixed with Al-Ti5-B1 master alloy with different percentages (1, 2, and 3 pct), results in coated layer consisted of matrix of fine dendrite eutectic morphology structure inside α-Al grains. Many fine in situ TiAl3 and TiB2 intermetallics were precipitated almost at the grain boundary of α-Al grains. The amounts of these precipitates are increased by increasing the addition of Al-Ti5-B1 master alloy. The surface hardness of the 6028 aluminum alloy base metal was improved with the entire four used surface coating materials. The improvement reached to about 85 pct by the first type of coating material (Al-12 pctSi alloy), while it reached to 77, 83, and 89 pct by the coating materials of Al-6 pct Si-based mixed with Al-Ti5-B1 master alloy with different percentages 1, 2, and 3 pct, respectively.

SAGE SOLVENT ALTERNATIVES GUIDE: SYSTEM IMPROVEMENTS FOR SELECTING INDUSTRIAL SURFACE CLEANING ALTERNATIVES

EPA Science Inventory

The paper describes computer software, called SAGE, that can provide not only cleaning recommendations but also general information on various surface cleaning options. In short, it is an advisory system which can provide users with vital information on the cleaning process optio...

Cleaning Processes across NASA Centers

NASA Technical Reports Server (NTRS)

Hammond, John M.

2010-01-01

All significant surfaces of the hardware must be pre-cleaned to remove dirt, grit, scale, corrosion, grease, oil and other foreign matter prior to any final precision cleaning process. Metallic parts shall be surface treated (cleaned, passivated, pickled and/or coated) as necessary to prevent latent corrosion and contamination.

Effectiveness of Surface Cleaning and Disinfection in a Brazilian Healthcare Facility

PubMed Central

Santos-Junior, Aires G.; Ferreira, Adriano M.; Frota, Oleci P.; Rigotti, Marcelo A.; Barcelos, Larissa da S.; Lopes de Sousa, Alvaro Francisco; de Andrade, Denise; Guerra, Odanir G.; R. Furlan, Mara C.

2018-01-01

Background: Failures in the processes of cleaning and disinfecting health service surfaces may result in the spread and transfer of pathogens that are often associated with healthcare-related infections and outbreaks. Aims: To assess the effectiveness of environmental surface cleaning and disinfection in a hospital clinic. Method: The study was conducted in a nursing ward with 45 beds. A total of 80 samples from five high-touch surfaces were evaluated before and after cleaning and disinfection, using the following methods: visual inspection, adenosine triphosphate bioluminescence assay, aerobic colony count, Staphylococcus aureus colony count, and evaluation of resistance to methicillin. The data analysis used nonparametric comparative and correlative tests to observe any differences in the pre- and post- cleaning and disinfection results for the surfaces assessed. Results: Effective cleaning and disinfection had a significant effect on only two surfaces when measured for the presence of adenosine triphosphate, the inner bathroom door handle (p=0.007) and the toilet bowl (p=0.01). When evaluated for Staphylococcus aureus colony count, the toilet flush handle also demonstrated a significant effect (p=0.04). Conclusion: The effectiveness of cleaning and disinfection of the surfaces tested was not satisfactory. An educational intervention is recommended for the cleaning and disinfection staff and the nursing team at the healthcare facility. Relevance to Clinical Practice: The data in the study revealed that daily hospital cleaning and disinfection in the sampled sites are not sufficient in medical and surgical wards. Hospital cleanliness must be reevaluated from the point of view of materials, such as an adequate supply of clean cloths, in addition to establishing more precise cleanliness protocols and accurate monitoring systems. PMID:29643951

Plasma cleaning of nanoparticles from EUV mask materials by electrostatics

NASA Astrophysics Data System (ADS)

Lytle, W. M.; Raju, R.; Shin, H.; Das, C.; Neumann, M. J.; Ruzic, D. N.

2008-03-01

Particle contamination on surfaces used in extreme ultraviolet (EUV) mask blank deposition, mask fabrication, and patterned mask handling must be avoided since the contamination can create significant distortions and loss of reflectivity. Particles on the order of 10nm are problematic during MLM mirror fabrication, since the introduced defects disrupt the local Bragg planes. The most serious problem is the accumulation of particles on surfaces of patterned blanks during EUV light exposure, since > 25nm particles will be printed without an out-of-focus pellicle. Particle contaminants are also a problem with direct imprint processes since defects are printed every time. Plasma Assisted Cleaning by Electrostatics (PACE) works by utilizing a helicon plasma as well as a pulsed DC substrate bias to charge particle and repel them electrostatically from the surface. Removal of this nature is a dry cleaning method and removes contamination perpendicular from the surface instead of rolling or sweeping the particles off the surface, a benefit when cleaning patterned surfaces where contamination can be rolled or trapped between features. Also, an entire mask can be cleaned at once since the plasma can cover the entire surface, thus there is no need to focus in on an area to clean. Sophisticated particle contamination detection system utilizing high power laser called DEFCON is developed to analyze the particle removal after PACE cleaning process. PACE has shown greater than 90 % particle removal efficiencies for 30 to 220 nm PSL particles on ruthenium capped quartz. Removal results for silicon surfaces and quartz surfaces show similar removal efficiencies. Results of cleaning 80 nm PSL spheres from silicon substrates will be shown.

Impact of an Environmental Cleaning Intervention on the Presence of Methicillin-Resistant Staphylococcus aureus and Vancomycin-Resistant Enterococci on Surfaces in Intensive Care Unit Rooms

PubMed Central

Goodman, Eric R.; Platt, Richard; Bass, Richard; Onderdonk, Andrew B.; Yokoe, Deborah S.; Huang, Susan S.

2009-01-01

OBJECTIVES To evaluate the adequacy of discharge room cleaning and the impact of a cleaning intervention on the presence of methicillin-resistant Staphylococcus aureus (MRSA) and vancomycin-resistant enterococci (VRE) on environmental surfaces in intensive care unit (ICU) rooms. DESIGN Prospective environmental study. SETTING AND SAMPLE Convenience sample of ICU rooms in an academic hospital. METHODS AND INTERVENTION The intervention consisted of (1) a change from the use of pour bottles to bucket immersion for applying disinfectant to cleaning cloths, (2) an educational campaign, and (3) feedback regarding adequacy of discharge cleaning. Cleaning of 15 surfaces was evaluated by inspecting for removal of a preapplied mark, visible only with an ultraviolet lamp (“black light”). Six surfaces were cultured for MRSA or VRE contamination. Outcomes of mark removal and culture positivity were evaluated by χ2 testing and generalized linear mixed models, clustering by room. RESULTS The black-light mark was removed from 44% of surfaces at baseline, compared with 71% during the intervention (P <.001). The intervention increased the likelihood of removal of black-light marks after discharge cleaning (odds ratio, 4.4; P < .001), controlling for ICU type (medical vs surgical) and type of surface. The intervention reduced the likelihood of an environmental culture positive for MRSA or VRE (proportion of cultures positive, 45% at baseline vs 27% during the intervention; adjusted odds ratio, 0.4; P = .02). Broad, flat surfaces were more likely to be cleaned than were doorknobs and sink or toilet handles. CONCLUSIONS Increasing the volume of disinfectant applied to environmental surfaces, providing education for Environmental Services staff, and instituting feedback with a black-light marker improved cleaning and reduced the frequency of MRSA and VRE contamination. PMID:18624666

Adhesion mapping of chemically modified and poly(ethylene oxide)-grafted glass surfaces.

PubMed

Jogikalmath, G; Stuart, J K; Pungor, A; Hlady, V

1999-08-01

Two-dimensional mapping of the adhesion pull-off forces was used to study the origin of surface heterogeneity in the grafted poly(ethylene oxide) (PEO) layer. The variance of the pull-off forces measured over the μm-sized regions after each chemical step of modifying glass surfaces was taken to be a measure of the surface chemical heterogeneity. The attachment of γ-glycidoxypropyltrimethoxy silane (GPS) to glass decreased the pull-off forces relative to the clean glass and made the surface more uniform. The subsequent hydrolysis of the terminal epoxide groups resulted in a larger surface heterogeneity which was modeled by two populations of the terminal hydroxyl groups, each with its own distribution of adhesion forces and force variance. The activation of the hydroxyls with carbonyldiimmidazole (CDI) healed the surface and lowered its adhesion, however, the force variance remained rather large. Finally, the grafting of the α,ω-diamino poly(ethyleneoxide) chains to the CDI-activated glass largely eliminated adhesion except at a few discrete regions. The adhesion on the PEO grafted layer followed the Poisson distribution of the pull-off forces. With the exception of the glass surface, a correlation between the water contact angles and the mean pull-off forces measured with the Si(3)N(4) tip surfaces was found for all modified glass surfaces.

Comparative study of pulsed laser cleaning applied to weathered marble surfaces

NASA Astrophysics Data System (ADS)

Ortiz, P.; Antúnez, V.; Ortiz, R.; Martín, J. M.; Gómez, M. A.; Hortal, A. R.; Martínez-Haya, B.

2013-10-01

The removal of unwanted matter from surface stones is a demanding task in the conservation of cultural heritage. This paper investigates the effectiveness of near-infrared (IR) and ultraviolet (UV) laser pulses for the cleaning of surface deposits, iron oxide stains and different types of graffiti (black, red and green sprays and markers, and black cutting-edge ink) on dolomitic white marble. The performance of the laser techniques is compared to common cleaning methods on the same samples, namely pressurized water and chemical treatments. The degree of cleaning achieved with each technique is assessed by means of colorimetric measurements and X-ray microfluorescence. Eventual morphological changes induced on the marble substrate are monitored with optical and electronic microscopy. It is found that UV pulsed laser ablation at 266 nm manages to clean all the stains except the cutting-edge ink, although some degree of surface erosion is produced. The IR laser pulses at 1064 nm can remove surface deposits and black spray acceptably, but a yellowing is observed on the stone surface after treatment. An economic evaluation shows that pulsed laser cleaning techniques are advantageous for the rapid cleaning of small or inaccessible surface areas, although their extensive application becomes expensive due to the long operating times required.

A comparison of the effects of toothbrushing and handpiece prophylaxis on retention of sealants.

PubMed

Kolavic Gray, Shellie; Griffin, Susan O; Malvitz, Dolores M; Gooch, Barbara F

2009-01-01

Tooth surface cleaning before acid etching is considered to be an important step in the retention of resin-based pit-and-fissure sealants. The authors reviewed and summarized instructions for cleaning tooth surfaces from five manufacturers of 10 unfilled resin-based sealants marketed in the United States. The authors also searched electronic databases for studies that directly compared the effects of different surface-cleaning methods on sealant retention and for systematic reviews of the effectiveness of sealants. They explored the association between surface-cleaning methods and sealant retention in the studies included in the systematic reviews. They calculated the summary weighted retention rates for studies that used either a handpiece or toothbrush prophylaxis. All of the sealant manufacturers' instructions for use (IFU) recommended cleaning the tooth before acid etching. None of the IFU directly stated that a handpiece was required to perform the cleaning, but five IFU implied the use of handpiece prophylaxis. None of the IFU recommended surface-altering procedures in caries-free teeth. Direct evidence from two clinical trials showed no difference in complete sealant retention between surfaces cleaned mechanically with pumice or prophylaxis paste and those cleaned with air-water syringe or dry toothbrushing. Indirect evidence from 10 studies found that weighted summary retention by year after sealant placement in studies that used toothbrush prophylaxis was greater than or equivalent to values for studies that used handpiece prophylaxis. Levels of sealant retention after surface cleaning with toothbrush prophylaxis were at least as high as those associated with hand-piece prophylaxis. This finding may translate into lower resource costs for sealant placement.

Method and apparatus for reducing cleaning blade wear

DOEpatents

Grannes, Steven G.; Rhoades, Charles A.; Hebbie, Terry L.

1992-01-01

An improved cleaning blade construction (10) for eliminating erosion troughs (6) in the upper surface (15) of a cleaning blade member (14) by introducing pressurized fluid through a pressure manifold chamber (16) formed in the upper surface (15) of the cleaning blade member (14). The pressurized fluid will prevent carryback material (7) from passing through a wear groove (6) formed in the cleaning blade member.

Synthesis, properties and applications of 2D non-graphene materials.

PubMed

Wang, Feng; Wang, Zhenxing; Wang, Qisheng; Wang, Fengmei; Yin, Lei; Xu, Kai; Huang, Yun; He, Jun

2015-07-24

As an emerging class of new materials, two-dimensional (2D) non-graphene materials, including layered and non-layered, and their heterostructures are currently attracting increasing interest due to their promising applications in electronics, optoelectronics and clean energy. In contrast to traditional semiconductors, such as Si, Ge and III-V group materials, 2D materials show significant merits of ultrathin thickness, very high surface-to-volume ratio, and high compatibility with flexible devices. Owing to these unique properties, while scaling down to ultrathin thickness, devices based on these materials as well as artificially synthetic heterostructures exhibit novel and surprising functions and performances. In this review, we aim to provide a summary on the state-of-the-art research activities on 2D non-graphene materials. The scope of the review will cover the preparation of layered and non-layered 2D materials, construction of 2D vertical van der Waals and lateral ultrathin heterostructures, and especially focus on the applications in electronics, optoelectronics and clean energy. Moreover, the review is concluded with some perspectives on the future developments in this field.

Area-selective atomic layer deposition of Ru on electron-beam-written Pt(C) patterns versus SiO2 substratum

NASA Astrophysics Data System (ADS)

Junige, Marcel; Löffler, Markus; Geidel, Marion; Albert, Matthias; Bartha, Johann W.; Zschech, Ehrenfried; Rellinghaus, Bernd; van Dorp, Willem F.

2017-09-01

Area selectivity is an emerging sub-topic in the field of atomic layer deposition (ALD), which employs opposite nucleation phenomena to distinct heterogeneous starting materials on a surface. In this paper, we intend to grow Ru exclusively on locally pre-defined Pt patterns, while keeping a SiO2 substratum free from any deposition. In a first step, we study in detail the Ru ALD nucleation on SiO2 and clarify the impact of the set-point temperature. An initial incubation period with actually no growth was revealed before a formation of minor, isolated RuO x islands; clearly no continuous Ru layer formed on SiO2. A lower temperature was beneficial in facilitating a longer incubation and consequently a wider window for (inherent) selectivity. In a second step, we write C-rich Pt micro-patterns on SiO2 by focused electron-beam-induced deposition (FEBID), varying the number of FEBID scans at two electron beam acceleration voltages. Subsequently, the localized Pt(C) deposits are pre-cleaned in O2 and overgrown by Ru ALD. Already sub-nanometer-thin Pt(C) patterns, which were supposedly purified into some form of Pt(O x ), acted as very effective activation for the locally restricted, thus area-selective ALD growth of a pure, continuous Ru covering, whereas the SiO2 substratum sufficiently inhibited towards no growth. FEBID at lower electron energy reduced unwanted stray deposition and achieved well-resolved pattern features. We access the nucleation phenomena by utilizing a hybrid metrology approach, which uniquely combines in-situ real-time spectroscopic ellipsometry, in-vacuo x-ray photoelectron spectroscopy, ex-situ high-resolution scanning electron microscopy, and mapping energy-dispersive x-ray spectroscopy.

Benzotriazole removal on post-Cu CMP cleaning

NASA Astrophysics Data System (ADS)

Jiying, Tang; Yuling, Liu; Ming, Sun; Shiyan, Fan; Yan, Li

2015-06-01

This work investigates systematically the effect of FA/O II chelating agent and FA/O I surfactant in alkaline cleaning solutions on benzotriazole (BTA) removal during post-Cu CMP cleaning in GLSI under the condition of static etching. The best detergent formulation for BTA removal can be determined by optimization of the experiments of single factor and compound cleaning solution, which has been further confirmed experimentally by contact angle (CA) measurements. The resulting solution with the best formulation has been measured for the actual production line, and the results demonstrate that the obtained cleaning solution can effectively and efficiently remove BTA, CuO and abrasive SiO2 without basically causing interfacial corrosion. This work demonstrates the possibility of developing a simple, low-cost and environmentally-friendly cleaning solution to effectively solve the issues of BTA removal on post-Cu CMP cleaning in a multi-layered copper wafer. Project supported by the Major National Science and Technology Special Projects (No. 2009ZX02308).

Microstructure of rapidly solidified Nb-based pre-alloyed powders for additive manufacturing

NASA Astrophysics Data System (ADS)

Guo, Yueling; Jia, Lina; Kong, Bin; Zhang, Shengnan; Zhang, Fengxiang; Zhang, Hu

2017-07-01

For powder-based additive manufacturing, sphere-shaped Nb-37Ti-13Cr-2Al-1Si pre-alloyed powders were prepared by plasma rotating electrode processing (PREP). The microstructure, surface oxidation and microhardness of the pre-alloyed powders were systematically investigated. Results showed that the main phases were Nb solid solution (Nbss) and Cr2Nb. The Cr2Nb phases were further determined using transmission electron microscopy (TEM). Fine dendrite structures were observed in the as-fabricated pre-alloyed powders, which transformed to large grains after heat treatment (HT) at 1450 °C for 3 h. With the increase of powder size, the secondary dendrite arm spacing (SDAS) increased and the microhardness (HV) decreased. A clean powder surface free of oxide particles was obtained by PREP and an oxide layer with 9.39 nm in thickness was generated on the powder surface. Compared with Cr- and Nb-oxides, more Ti-oxides were formed on outmost powder surface with a higher content of Ti (up to 47.86 at.%). The differences upon the microstructure and microhardness of the pre-alloyed powders with different sizes were discussed.

Failure of Cleaning Verification in Pharmaceutical Industry Due to Uncleanliness of Stainless Steel Surface.

PubMed

Haidar Ahmad, Imad A; Blasko, Andrei

2017-08-11

The aim of this work is to identify the parameters that affect the recovery of pharmaceutical residues from the surface of stainless steel coupons. A series of factors were assessed, including drug product spike levels, spiking procedure, drug-excipient ratios, analyst-to-analyst variability, intraday variability, and cleaning procedure of the coupons. The lack of a well-defined procedure that consistently cleaned the coupon surface was identified as the major contributor to low and variable recoveries. Assessment of cleaning the surface of the coupons with clean-in-place solutions (CIP) gave high recovery (>90%) and reproducible results (Srel≤4%) regardless of the conditions that were assessed previously. The approach was successfully applied for cleaning verification of small molecules (MW <1,000 Da) as well as large biomolecules (MW up to 50,000 Da).

Comparative study between chemical and atmospheric pressure plasma jet cleaning on glass substrate

NASA Astrophysics Data System (ADS)

Elfa, Rizan Rizon; Ahmad, Mohd Khairul; Fhong, Soon Chin; Sahdan, Mohd Zainizan; Nayan, Nafarizal

2017-01-01

The atmospheric pressure plasma jet with low frequency and argon as working gas is presented in this paper to demonstrate its application for glass substrate clean and modification. The glass substrate clean by atmospheric pressure plasma jet is an efficient method to replace other substrate clean method. A comparative analysis is done in this paper between substrate cleaned by chemical and plasma treatment methods. Water contact angle reading is taken for a different method of substrate clean and period of treatment. Under the plasma treatment, the sample shows low surface adhesion due to having the surface property of super hydrophilic surface 7.26°. This comparative analysis is necessary in the industrial application for cost production due to sufficient time and method of substrate clean.

Single and multijunction silicon based thin film solar cells on a flexible substrate with absorber layers made by hot-wire CVD

NASA Astrophysics Data System (ADS)

Li, Hongbo

2007-09-01

With the worldwide growing concern about reliable energy supply and the environmental problems of fossil and nuclear energy production, the need for clean and sustainable energy sources is evident. Solar energy conversion, such as in photovoltaic systems, can play a major role in the urgently needed energy transition in electricity production. Solar cells based on thin film silicon and its alloys are a promising candidate that is capable of fulfilling the fast increasing demand of a reliable solar cell supply. The conventional method to deposit silicon thin films is based on plasma enhanced chemical vapour deposition (PECVD) techniques, which have the disadvantage of increasing film inhomogeneity at a high deposition rate when scaling up for the industrial production. In this thesis, we study the possibility of making high efficiency single and multijunction thin film silicon solar cells with the so-called hot-wire CVD technique, in which no strong electromagnetic field is involved in the deposition. Therefore, the up-scaling for industrial production is straightforward. We report and discuss our findings on the correlation of substrate surface rms roughness and the main output parameter of a solar cell, the open circuit voltage Voc of c-Si:H n i p cells. By considering all the possible reasons that could influence the Voc of such cells, we conclude that the near linear correlation of Voc and substrate surface rms roughness is the result the two most probable reasons: the unintentional doping through the cracks originated near the valleys of the substrate surface due to the in-diffusion of impurities, and the high density electrical defects formed by the collision of columnar silicon structures. Both of them relate to the morphology of substrate surface. Therefore, to have the best cell performance on a rough substrate surface, a good control on the substrate surface morphology is necessary. Another issue influencing the performance of c-Si:H solar cells is the change in layer crystallinity during the growth of the c-Si:H i-layer. For PECVD deposited cells, it is often found that the layer crystallinity is enhanced with increasing film thickness. We found for Hot-wire deposited cells, however, the opposite development in material structure: the material becomes amorphous near the end of the deposition. This results in a deterioration of cell performance. We therefore introduce a so-called H2 reverse profiling technique, in which H2 is increased during the c-Si:H i-layer deposition. With this technique, a cell with an efficiency of 8.5% has been reached, which is in line with the best reported PECVD cells deposited on the same type of substrate. In the literature, carrier transport in c-Si:H cells has been a topic for debate. In this thesis, we present our finding of photogating effect on the spectral response of c-Si:H solar cells. When measured under coloured bias light, the apparent quantum efficiency value of a c-Si:H cell can be largely enhanced. This phenomenon is a typical result of trapping induced field modification in the bulk of a drift type solar cell. The discovery of this phenomenon has experimentally proved that field-driven transport to a large extend exist in a c-Si:H solar cell.

Evaluation of hybrid sol-gel incorporated with nanoparticles as nano paint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jameel, Zainab N., E-mail: zeinb76-alrekbe@yahoo.com; Haider, Adawiya J., E-mail: adawiyahaider@yahoo.com; Taha, Samar Y., E-mail: samarjam2002@yahoo.com

A coating with self-cleaning characteristics has been developed using a TiO{sub 2}/SiO{sub 2} hybrid sol-gel, TiO{sub 2} nanoparticles and organosilicate nanoparticles (OSNP). A patented technology of the hybrid sol-gel and OSNP was combined with TiO{sub 2} nanoparticles to create the surface chemistry for self-cleaning. Two synthesis methods have been developed to prepare TiO{sub 2} nanoparticles (NPs), resulting in the enhancement of local paint by the addition of anatase and rutile TiO{sub 2} phases. The NPs size as determined by Dynamic Light Scattering (DLS) ranges within of (3-4) and (20-42) nm, which was also confirmed by Scanning Electron Microscopy (SEM). Themore » nanoparticles showed surface charge (zeta-potential, ζ) of +35 and +25.62 mV for the methods, respectively, and ζ values of +41.31 and 34.02 mV for anatase and rutile phases, respectively. The NPs were mixed with the coating solution (i.e., hybrid sol-gel and OSNP) in different concentrations and thin films were prepared by spin coating. Self-cleaning tests were performed using Rhodamine B (RhB) as a pollution indicator. The effect of UV-irradiation on the films was also studied. Anatase and rutile incorporated as a mixture with different ratios in local paint and washability as well as a contrast ratio tests were performed. It was found that the addition of TiO{sub 2} NPs in combination with irradiation show a great enhancement of RhB degradation (1%) wt. with a decrease in contact angle and improved washability.« less

Corrosion behaviour of laser-cleaned AA7024 aluminium alloy

NASA Astrophysics Data System (ADS)

Zhang, F. D.; Liu, H.; Suebka, C.; Liu, Y. X.; Liu, Z.; Guo, W.; Cheng, Y. M.; Zhang, S. L.; Li, L.

2018-03-01

Laser cleaning has been considered as a promising technique for the preparation of aluminium alloy surfaces prior to joining and welding and has been practically used in the automotive industry. The process is based on laser ablation to remove surface contaminations and aluminium oxides. However the change of surface chemistry and oxide status may affect corrosion behaviour of aluminium alloys. Until now, no work has been reported on the corrosion characteristics of laser cleaned metallic surfaces. In this study, we investigated the corrosion behaviour of laser-cleaned AA7024-T4 aluminium alloy using potentiodynamic polarisation, electrochemical impedance spectroscopy (EIS) and scanning vibrating electrode technique (SVET). The results showed that the laser-cleaned surface exhibited higher corrosion resistance in 3.5 wt.% NaCl solution than as-received hot-rolled alloy, with significant increase in impedance and decrease in capacitance, while SVET revealed that the active anodic points appeared on the as-received surface were not presented on the laser-cleaned surfaces. Such corrosion behaviours were correlated to the change of surface oxide status measured by glow discharge optical emission spectrometry (GDOES) and X-ray photoelectron spectroscopy (XPS). It was suggested that the removal of the original less protective oxide layer consisting of MgO and MgAl2O4 on the as-received surfaces and the newly formed more protective oxide layer containing mainly Al2O3 and MgO by laser cleaning were responsible for the improvement of the corrosion performance.

Plasma surface cleaning in a microwave plasma source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsai, C.C.; Nelson, W.D.; Haselton, H.H.

1994-03-01

A microwave electron cyclotron resonance (ECR) plasma source has been operated to produce reactive plasmas of oxygen and its mixture with argon. Aluminum samples (0.95 cm by 1.9 cm) were coated with thin films (<20 {mu}m in thickness) of Shell Vitrea oil and cleaned by using such reactive plasmas. The plasma cleaning was done in discharge conditions of microwave power up to 1300 W, radio frequency power up to 200 W, biased potential up to 400 V, gas pressures up to 5 mtorr, and operating time up to 35 min. The surface texture of the postcleaned samples has been examinedmore » visually. Mass loss of the samples after plasma cleaning was measured to estimate cleaning rates. Measured clean rates of low-pressure (0.5-mtorr) argon/oxygen plasmas were as high as 2.7 {mu}m/min. X-ray photoelectron spectroscopy (XPS) was used to determine cleanliness of the sample surfaces after plasma cleaning. The XPS study on polished samples confirmed the effectiveness of plasma cleaning in achieving atomic level of surface cleanliness. In this technical memorandum plasma properties, cleaning phenomena, and significant results are reported and discussed.« less

Particulate Removal Using a CO2 Composite Spray Cleaning System

NASA Technical Reports Server (NTRS)

Chen, Nicole; Lin, Ying; Jackson, David; Chung, Shirley

2016-01-01

The Planetary Protection surface cleanliness requirements for potential Mars Sample Return hardware that would come in contact with Martian samples may be stricter than previous missions. The Jet Propulsion Laboratory has developed a new technology that will enable us to remove sub-micron size particles from critical hardware surfaces. A hand-held CO2 composite cleaning system was tested to verify its cleaning capabilities. This convenient, portable device can be used in cleanrooms for cleaning after rework or during spacecraft integration and assembly. It is environmentally safe and easy to use. This cleaning concept has the potential to be further developed into a robotic cleaning device on a Mars Lander to be used to clean sample acquisition or sample handling devices in situ. Contaminants of known sizes and concentrations, such as fluorescent microspheres and spores were deposited on common spacecraft material surfaces. The cleaning efficiency results will be presented and discussed.

Cavitation effects in ultrasonic cleaning baths

NASA Technical Reports Server (NTRS)

Glasscock, Barbara H.

1995-01-01

In this project, the effect of cavitation from aqueous ultrasonic cleaning on the surfaces of metal and non-metal sample coupons was studied. After twenty cleaning cycles, the mass loss from the aluminum coupons averaged 0.22 mg/sq cm surface area and 0.014 mg/sq cm for both stainless steel and titanium. The aluminum coupons showed visual evidence of minor cavitation erosion in regions of previously existing surface irregularities. The non-metal samples showed some periods of mass gain. These effects are believed to have minor impact on hardware being cleaned, but should be evaluated in the context of specific hardware requirements. Also the ultrasonic activity in the large cleaning baths was found to be unevenly distributed as measured by damage to sheets of aluminum foil. It is therefore recommended that items being cleaned in an ultrasonic bath be moved or conveyed during the cleaning to more evenly distribute the cavitation action provide more uniform cleaning.

40 CFR 63.5755 - How do I demonstrate compliance with the aluminum recreational boat surface coating spray gun...

Code of Federal Regulations, 2013 CFR

2013-07-01

... the aluminum recreational boat surface coating spray gun cleaning work practice standards? 63.5755... recreational boat surface coating spray gun cleaning work practice standards? You must demonstrate compliance with the aluminum coating spray gun cleaning work practice standards by meeting the requirements of...

40 CFR 63.5755 - How do I demonstrate compliance with the aluminum recreational boat surface coating spray gun...

Code of Federal Regulations, 2012 CFR

2012-07-01

... the aluminum recreational boat surface coating spray gun cleaning work practice standards? 63.5755... recreational boat surface coating spray gun cleaning work practice standards? You must demonstrate compliance with the aluminum coating spray gun cleaning work practice standards by meeting the requirements of...

40 CFR 63.5755 - How do I demonstrate compliance with the aluminum recreational boat surface coating spray gun...

Code of Federal Regulations, 2014 CFR

2014-07-01

... the aluminum recreational boat surface coating spray gun cleaning work practice standards? 63.5755... recreational boat surface coating spray gun cleaning work practice standards? You must demonstrate compliance with the aluminum coating spray gun cleaning work practice standards by meeting the requirements of...

40 CFR 63.5755 - How do I demonstrate compliance with the aluminum recreational boat surface coating spray gun...

Code of Federal Regulations, 2011 CFR

2011-07-01

... the aluminum recreational boat surface coating spray gun cleaning work practice standards? 63.5755... surface coating spray gun cleaning work practice standards? You must demonstrate compliance with the aluminum coating spray gun cleaning work practice standards by meeting the requirements of paragraph (a) or...

40 CFR 63.5755 - How do I demonstrate compliance with the aluminum recreational boat surface coating spray gun...

Code of Federal Regulations, 2010 CFR

2010-07-01

... the aluminum recreational boat surface coating spray gun cleaning work practice standards? 63.5755... surface coating spray gun cleaning work practice standards? You must demonstrate compliance with the aluminum coating spray gun cleaning work practice standards by meeting the requirements of paragraph (a) or...

Fluid drag reduction and efficient self-cleaning with rice leaf and butterfly wing bioinspired surfaces

NASA Astrophysics Data System (ADS)

Bixler, Gregory D.; Bhushan, Bharat

2013-08-01

Researchers are continually inspired by living nature to solve complex challenges. For example, unique surface characteristics of rice leaves and butterfly wings combine the shark skin (anisotropic flow leading to low drag) and lotus leaf (superhydrophobic and self-cleaning) effects, producing the so-called rice and butterfly wing effect. In this paper, we present an overview of rice leaf and butterfly wing fluid drag and self-cleaning studies. In addition, we examine two other promising aquatic surfaces in nature known for such properties, including fish scales and shark skin. Morphology, drag, self-cleaning, contact angle, and contact angle hysteresis data are presented to understand the role of wettability, viscosity, and velocity. Liquid repellent coatings are utilized to recreate or combine various effects. Discussion is provided along with conceptual models describing the role of surface structures related to low drag, self-cleaning, and antifouling properties. Modeling provides design guidance when developing novel low drag and self-cleaning surfaces for applications in the medical, marine, and industrial fields.

The effect of cleaning on blood contamination in the dental surgery following periodontal procedures.

PubMed

Edmunds, L M; Rawlinson, A

1998-10-01

Blood contamination of 16 surfaces in the dental surgery was investigated using the Kastle-Meyer test for haemoglobin, after three types of periodontal procedures had been performed on a total of 30 patients. The effect of cleaning surfaces contaminated by blood was investigated using the same test. Cleaning materials used in the dental surgery were tested to rule out the possibility of false positive outcomes and the sensitivity of the test was determined prior to the study. The results show a marked variation in the degree of contamination and efficacy of cleaning following treatment. Overall, root planing was associated with the most widespread and frequent blood contamination and gingival surgery the least. The surgery work surface, edge of the spittoon, aspirator tube and ultrasonic scaler handpiece into which the ultrasonic insert fits, were the most frequently contaminated surfaces. The work surface, dentist's pen, light switch and handle were cleaned most effectively. The least effectively cleaned surfaces were the water dispenser switch, aspirator tube, bracket table and ultrasonic scaler handpiece. Methods for reducing this potential source of cross-infection are discussed.

Efficacy of low-pressure foam cleaning compared to conventional cleaning methods in the removal of bacteria from surfaces associated with convenience food.

PubMed

Lambrechts, A A; Human, I S; Doughari, J H; Lues, J F R

2014-09-01

Food borne illnesses and food poisoning are cause for concern globally. The diseases are often caused by food contamination with pathogenic bacteria due largely to poor sanitary habits or storage conditions. Prevalence of some bacteria on cleaned and sanitised food contact surfaces from eight convenience food plants in Gauteng (South Africa) was investigated with the view to evaluate the efficacy of the cleaning methods used with such food contact surfaces. The microbial load of eight convenience food manufacturing plants was determined by sampling stainless steel food contact surfaces after they had been cleaned and sanitised at the end of a day's shift. Samples were analysed for Total Plate Count (TPC), Escherichia coli, Salmonella species, Staphylococcus aureus and Listeria species. Results showed that 59 % of the total areas sampled for TPC failed to comply with the legal requirements for surfaces, according to the Foodstuffs, Cosmetics and Disinfectants Act (< 100 cfu.cm(-2)). S. aureus and Salmonella were not detected, but Listeria was detected in 23 % and E. coli in 1.3 % of the samples. Fifty percent (50 %) of the plants applied conventional cleaning methods for cleaning and sanitation and 50 % used the low-pressure foam (LPF) method. There was significant difference (P ≤ 0.05) between the mean TPC values of the conventional cleaning method (14 358.82) compared to that of LPF method (2 386.51) but no significant difference (P > 0.05) in terms of Listeria species isolates obtained from both cleaning methods. The LPF method proved to be the superior cleaning option for lowering TPC counts. Regardless of cleaning method used, pathogens continued to flourish on various surfaces, including dry stainless steel, posing a contamination hazard for a considerable period depending on the contamination level and type of pathogen. Intensive training for proper chemical usage and strict procedural compliance among workers for efficient cleaning procedures is recommended.

Analysis of temporal evolution of quantum dot surface chemistry by surface-enhanced Raman scattering.

PubMed

Doğan, İlker; Gresback, Ryan; Nozaki, Tomohiro; van de Sanden, Mauritius C M

2016-07-08

Temporal evolution of surface chemistry during oxidation of silicon quantum dot (Si-QD) surfaces were probed using surface-enhanced Raman scattering (SERS). A monolayer of hydrogen and chlorine terminated plasma-synthesized Si-QDs were spin-coated on silver oxide thin films. A clearly enhanced signal of surface modes, including Si-Clx and Si-Hx modes were observed from as-synthesized Si-QDs as a result of the plasmonic enhancement of the Raman signal at Si-QD/silver oxide interface. Upon oxidation, a gradual decrease of Si-Clx and Si-Hx modes, and an emergence of Si-Ox and Si-O-Hx modes have been observed. In addition, first, second and third transverse optical modes of Si-QDs were also observed in the SERS spectra, revealing information on the crystalline morphology of Si-QDs. An absence of any of the abovementioned spectral features, but only the first transverse optical mode of Si-QDs from thick Si-QD films validated that the spectral features observed from Si-QDs on silver oxide thin films are originated from the SERS effect. These results indicate that real-time SERS is a powerful diagnostic tool and a novel approach to probe the dynamic surface/interface chemistry of quantum dots, especially when they involve in oxidative, catalytic, and electrochemical surface/interface reactions.

SnTe microcrystals: Surface cleaning of a topological crystalline insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saghir, M., E-mail: M.Saghir@warwick.ac.uk, E-mail: G.Balakrishnan@warwick.ac.uk; Walker, M.; McConville, C. F.

Investigating nanometer and micron sized materials thought to exhibit topological surface properties that can present a challenge, as clean surfaces are a pre-requisite for band structure measurements when using nano-ARPES or laser-ARPES in ultra-high vacuum. This issue is exacerbated when dealing with nanometer or micron sized materials, which have been prepared ex-situ and so have been exposed to atmosphere. We present the findings of an XPS study where various cleaning methods have been employed to reduce the surface contamination and preserve the surface quality for surface sensitive measurements. Microcrystals of the topological crystalline insulator SnTe were grown ex-situ and transferredmore » into ultra high vacuum (UHV) before being treated with either atomic hydrogen, argon sputtering, annealing, or a combination of treatments. The samples were also characterised using the scanning electron microscopy, both before and after treatment. It was found that atomic hydrogen cleaning with an anneal cycle (200 °C) gave the best clean surface results.« less

Surface cleaning and pure nitridation of GaSb by in-situ plasma processing

NASA Astrophysics Data System (ADS)

Gotow, Takahiro; Fujikawa, Sachie; Fujishiro, Hiroki I.; Ogura, Mutsuo; Chang, Wen Hsin; Yasuda, Tetsuji; Maeda, Tatsuro

2017-10-01

A clean and flat GaSb surface without native oxides has been attained by H2 plasma cleaning and subsequent in-situ N2 plasma nitridation process at 300 oC. The mechanisms of thermal desorption behavior of native oxides on GaSb have been studied by thermal desorption spectroscopy (TDS) analysis. The suitable heat treatment process window for preparing a clean GaSb surface is given. Auger electron spectroscopy (AES) analysis indicates that native oxides were completely removed on the GaSb surface after H2 plasma exposure and the pure nitridation of the clean GaSb surface was obtained at a relatively low temperature of 300 °C. This pure nitridation of GaSb have a possibility to be used as a passivation layer for high quality GaSb MOS devices.

Self-cleaning of superhydrophobic surfaces by self-propelled jumping condensate

PubMed Central

Wisdom, Katrina M.; Qu, Xiaopeng; Liu, Fangjie; Watson, Gregory S.; Chen, Chuan-Hua

2013-01-01

The self-cleaning function of superhydrophobic surfaces is conventionally attributed to the removal of contaminating particles by impacting or rolling water droplets, which implies the action of external forces such as gravity. Here, we demonstrate a unique self-cleaning mechanism whereby the contaminated superhydrophobic surface is exposed to condensing water vapor, and the contaminants are autonomously removed by the self-propelled jumping motion of the resulting liquid condensate, which partially covers or fully encloses the contaminating particles. The jumping motion off the superhydrophobic surface is powered by the surface energy released upon coalescence of the condensed water phase around the contaminants. The jumping-condensate mechanism is shown to spontaneously clean superhydrophobic cicada wings, where the contaminating particles cannot be removed by gravity, wing vibration, or wind flow. Our findings offer insights for the development of self-cleaning materials. PMID:23630277

Plasma surface cleaning using microwave plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsai, C.C.; Haselton, H.H.; Nelson, W.D.

1993-11-01

In a microwave electron cyclotron resonance (ECR) plasma source, reactive plasmas of oxygen and its mixture with argon are used for plasma-cleaning experiments. Aluminum test samples (0.95 {times} 1.9 cm) were coated with thin films ({le} 20 {mu}m in thickness) of Shell Vitrea oil and cleaned by using such reactive plasmas. The plasma cleaning was done in various discharge conditions with fixed microwave power, rf power, biased potential, gas pressures (0.5 and 5 mtorr), and operating time up to 35 min. The status of plasma cleaning has been monitored by using mass spectroscopy. Mass loss of the samples after plasmamore » cleaning was measured to estimate cleaning rates. Measured clean rates of low pressure (0.5 mtorr) argon/oxygen plasmas were as high as 2.7 {mu}/min. X-ray photoelectron spectroscopy was used to determine cleanliness of the sample surfaces and confirm the effectiveness of plasma cleaning in achieving atomic levels of surface cleanliness. In this paper, significant results are reported and discussed.« less

Surface oxidation of GaN(0001): Nitrogen plasma-assisted cleaning for ultrahigh vacuum applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gangopadhyay, Subhashis; Schmidt, Thomas, E-mail: tschmidt@ifp.uni-bremen.de; Kruse, Carsten

The cleaning of metal-organic vapor-phase epitaxial GaN(0001) template layers grown on sapphire has been investigated. Different procedures, performed under ultrahigh vacuum conditions, including degassing and exposure to active nitrogen from a radio frequency nitrogen plasma source have been compared. For this purpose, x-ray photoelectron spectroscopy, reflection high-energy electron diffraction, and scanning tunneling microscopy have been employed in order to assess chemical as well as structural and morphological surface properties. Initial degassing at 600 °C under ultrahigh vacuum conditions only partially eliminates the surface contaminants. In contrast to plasma assisted nitrogen cleaning at temperatures as low as 300 °C, active-nitrogen exposure at temperaturesmore » as high as 700 °C removes the majority of oxide species from the surface. However, extended high-temperature active-nitrogen cleaning leads to severe surface roughening. Optimum results regarding both the removal of surface oxides as well as the surface structural and morphological quality have been achieved for a combination of initial low-temperature plasma-assisted cleaning, followed by a rapid nitrogen plasma-assisted cleaning at high temperature.« less

Cleaning of copper traces on circuit boards with excimer laser radiation

NASA Astrophysics Data System (ADS)

Wesner, D. A.; Mertin, M.; Lupp, F.; Kreutz, E. W.

1996-04-01

Cleaning of Cu traces on circuit boards is studied using pulsed excimer laser radiation (pulse width ˜ 20 ns, wavelength 248 nm), with the goal of improving the properties of the Cu surface for soldering and bonding. Traces with well-defined oxide overlayers are cleaned by irradiation in air using ≤ 10 3 laser pulses at fluences per pulse of ≤ 2 J cm -2. After treatment the surface morphology is analyzed using optical microscopy, optical profilometry, and scanning electron microscopy, while the chemical state of the surface is investigated with X-ray photoelectron (XPS) spectroscopy. Ellipsometry is used to determine the oxide overlayer thickness. Prior to cleaning samples exhibit a contamination overlayer about 15-25 nm in thickness containing Cu 2O and C. Cleaning reduces the overlayer thickness to ≤ 10 nm by material removal. The process tends to be self-limiting, since the optical reflectivity of the oxidized Cu surface for laser radiation is smaller than that of the cleaned surface. Additionally, the interaction with the laser radiation results in surface segregation of a minor alloy component out of the bulk (e.g. Zn), which may help to passivate the surface for further chemical reactions.

Comprehensive investigation of HgCdTe metalorganic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Raupp, Gregory B.

1993-01-01

The principal objective of this experimental and theoretical research program was to explore the possibility of depositing high quality epitaxial CdTe and HgCdTe at very low pressures through metalorganic chemical vapor deposition (MOCVD). We explored two important aspects of this potential process: (1) the interaction of molecular flow transport and deposition in an MOCVD reactor with a commercial configuration, and (2) the kinetics of metal alkyl source gas adsorption, decomposition and desorption from the growing film surface using ultra high vacuum surface science reaction techniques. To explore the transport-reaction issue, we have developed a reaction engineering analysis of a multiple wafer-in-tube ultrahigh vacuum chemical vapor deposition (UHV/CVD) reactor which allows an estimate of wafer or substrate throughput for a reactor of fixed geometry and a given deposition chemistry with specified film thickness uniformity constraints. The model employs a description of ballistic transport and reaction based on the pseudo-steady approximation to the Boltzmann equation in the limit of pure molecular flow. The model representation takes the form of an integral equation for the flux of each reactant or intermediate species to the wafer surfaces. Expressions for the reactive sticking coefficients (RSC) for each species must be incorporated in the term which represents reemission from a wafer surface. The interactions of MOCVD precursors with Si and CdTe were investigated using temperature programmed desorption (TPD) in ultra high vacuum combined with Auger electron spectroscopy (AES). These studies revealed that diethyltellurium (DETe) and dimethylcadmium (DMCd) adsorb weakly on clean Si(100) and desorb upon heating without decomposing. These precursors adsorb both weakly and strongly on CdTe(111)A, with DMCd exhibiting the stronger interaction with the surface than DETe.

Loading of chitosan - Nano metal oxide hybrids onto cotton/polyester fabrics to impart permanent and effective multifunctions.

PubMed

Ibrahim, Nabil A; Eid, Basma M; El-Aziz, Eman Abd; Elmaaty, Tarek M Abou; Ramadan, Shaimaa M

2017-12-01

New and durable multifunctional properties of cotton/polyester blended fabrics were developed through loading of chitosan (Cs) and various metal oxide nanoparticles (MONPs) namely ZnO, TiO 2 , and SiO 2 onto fabric surface using citric acid/Sodium hypophosphite for ester-crosslinking and creating new anchoring and binding sites, COOH groups, onto the ester-crosslinked fabrics surface. The surface morphology and the presence of active ingredients (Cs & MONPs) onto selected - coated fabric samples were analyzed by SEM images and confirmed by EDS spectrums. The influence of various finishing formulations on some performance and functional properties such as wettability, antibacterial activity, UV-protection, self-cleaning, resiliency and durability to wash were studied. The obtained results revealed that the extent of improvement in the imparted functional properties is governed by type of loaded-hybrid and follows the decreasing order: Cs-TiO 2 NPs>Cs-ZnONPs>SiO 2 NP s >Cs alone, as well as kind of substrate cotton/polyester (65/35)>cotton/polyester (50/50). Moreover, after 15 washing cycles, the durability of the imparted functional properties of Cs/TiO 2 NP s - loaded substrates marginally decreased indicating the strong fixation of the hybrid components onto the ester-crosslinked substrates. The obtained bioactive multifunctional textiles can be used for producing eco-friendly protective textile materials for numerous applications. Copyright © 2017 Elsevier B.V. All rights reserved.

Surface passivation of InGaP/GaAs HBT using silicon-nitride film deposited by ECR CVD plasma

NASA Astrophysics Data System (ADS)

Manera, L. T.; Zoccal, L. B.; Diniz, J. A.; Tatsch, P. J.; Doi, I.

2008-07-01

In this paper we have developed a passivation technique with silicon-nitride (SiN X) film that requires no surface pre-treatment, and is fully compatible to monolithic microwave integrated circuits (MMICs). The nitride depositions were carried out by ECR-CVD (electron cyclotron resonance-chemical vapor deposition) directly over InGaP/GaAs heterojunction structures, which are used for heterojunction bipolar transistors (HBTs). Optical emission spectrometry (OES) was used for plasma characterization, and low formation of H and NH molecules in the gas phase was detected at pressure of 2.5 mTorr. These molecules can degrade III-V semiconductor surfaces due to the preferential loss of As or P and hydrogen incorporation at the substrate. The substrates were cleaned with organic solvents using a Sox-let distillate. The ECR depositions were carried out at a fixed substrate temperature of 20 °C, SiH 4/N 2 flow ratio of 1, Ar flow of 5 sccm pressure of 2.5 mTorr and microwave (2.45 GHz) power of 250 W and RF (13.56 MHz) power of 4 W. We have applied this film for InGaP/GaAs HBT fabrication process with excellent results, where two major contribuiton is related to this passivation technique, the enhancement in the transistor dc gain β and the improvement in the signal-to-noise ratio when compared unpassivated and passivated devices.

Robust self-cleaning surfaces that function when exposed to either air or oil

NASA Astrophysics Data System (ADS)

Lu, Yao; Sathasivam, Sanjayan; Song, Jinlong; Crick, Colin R.; Carmalt, Claire J.; Parkin, Ivan P.

2015-03-01

Superhydrophobic self-cleaning surfaces are based on the surface micro/nanomorphologies; however, such surfaces are mechanically weak and stop functioning when exposed to oil. We have created an ethanolic suspension of perfluorosilane-coated titanium dioxide nanoparticles that forms a paint that can be sprayed, dipped, or extruded onto both hard and soft materials to create a self-cleaning surface that functions even upon emersion in oil. Commercial adhesives were used to bond the paint to various substrates and promote robustness. These surfaces maintained their water repellency after finger-wipe, knife-scratch, and even 40 abrasion cycles with sandpaper. The formulations developed can be used on clothes, paper, glass, and steel for a myriad of self-cleaning applications.

Recrystallization in Si upon ion irradiation at room temperature in Co/Si(111) thin film systems

NASA Astrophysics Data System (ADS)

Banu, Nasrin; Satpati, B.; Dev, B. N.

2018-04-01

After several decades of research it was concluded that for a constant flux recrystallization in Si upon ion irradiation is possible only at high temperature. At low temperature or at room temperature only amorphization can take place. However we have observed recrystallization in Si upon ion irradiation at room temperature in a Co/Si thin film system. The Co/Si sample was prepared by deposition of 25 nm Co on clean Si(111) substrate. An oxide layer (˜ 2nm) of cobalt at the top of the film due to air exposure. The ion irradiation was done at room temperature under high vacuum with 1MeV Si+ ion with low beam current < 400 nA. Earlier we have shown similar ion induced recrystallization in Si(100) substrate which had a sandwich Si/Ni/Si structure. This system had an epitaxial buffer Si layer on Si substrate. This study also shows that the phenomenon is independent of substrate orientation and buffer layer. We have used transmission electron microscopy (TEM) to study the recrystallization behavior.

Shear stress cleaning for surface departiculation

NASA Technical Reports Server (NTRS)

Musselman, R. P.; Yarbrough, T. W.

1986-01-01

A cleaning technique widely used by the nuclear utility industry for removal of radioactive surface contamination has proven effective at removing non-hazardous contaminant particles as small as 0.1 micrometer. The process employs a controlled high velocity liquid spray inside a vapor containment enclosure to remove particles from a surface. The viscous drag force generated by the cleaning fluid applies a shear stress greater than the adhesion force that holds small particles to a substrate. Fluid mechanics and field tests indicate general cleaning parameters.

Air powder abrasive treatment as an implant surface cleaning method: a literature review.

PubMed

Tastepe, Ceylin S; van Waas, Rien; Liu, Yuelian; Wismeijer, Daniel

2012-01-01

To evaluate the air powder abrasive treatment as an implant surface cleaning method for peri-implantitis based on the existing literature. A PubMed search was conducted to find articles that reported on air powder abrasive treatment as an implant surface cleaning method for peri-implantitis. The studies evaluated cleaning efficiency and surface change as a result of the method. Furthermore, cell response toward the air powder abrasive-treated discs, reosseointegration, and clinical outcome after treatment is also reported. The PubMed search resulted in 27 articles meeting the inclusion criteria. In vitro cleaning efficiency of the method is reported to be high. The method resulted in minor surface changes on titanium specimens. Although the air powder abrasive-treated specimens showed sufficient levels of cell attachment and cell viability, the cell response decreased compared with sterile discs. Considerable reosseointegration between 39% and 46% and improved clinical parameters were reported after treatment when applied in combination with surgical treatment. The results of the treatment are influenced by the powder type used, the application time, and whether powder was applied surgically or nonsurgically. The in vivo data on air powder abrasive treatment as an implant surface cleaning method is not sufficient to draw definitive conclusions. However, in vitro results allow the clinician to consider the method as a promising option for implant surface cleaning in peri-implantitis treatment.

Nb/Al-AlOx/Nb Edge Junctions for Distributed Mixers

NASA Astrophysics Data System (ADS)

Amos, R. S.; Lichtenberger, A. W.; Tong, C. E.; Blundell, R.; Pan, S.-K.; Kerr, A. R.

We have fabricated high quality Nb/Al-oxide/Al/Nb edge junctions using a Nb/SiO/sub 2/ bi-layer film as the base electrode, suitable for use as traveling wave mixers. An edge is cut in the bi-layer with an ion gun at a 45 degree angle using a photoresist mask. The wafer is then cleaned in-situ with a physical ion gun clean followed by the deposition of a thin Al (a1) film, which is then thermally oxidized, an optional second Al (a2) layer, and a Nb counter electrode. It was found that devices with an a2 layer resulted in superior electrical characteristics, though proximity effects increased strongly with a2 thickness. The counter electrode is defined with an SF/sub 6/+N/sub 2/ reactive ion etch, using the Al barrier layer as an etch stop. The Al barrier layer is then either removed with an Al wet etch to isolate the individual devices, or the devices are separated with an anodization process. Various ion gun cleaning conditions have been examined; in addition, both wet and plasma etch bi-layer edge surface pre-treatments were investigated. It was found that edge junctions with large widths (i.e., those more suitable for traveling wave mixers) typically benefited more from such treatments. Initial receiver results at 260 GHz have yielded a DSB noise temperature of 60 K.

Analysis of structural changes in active site of luciferase adsorbed on nanofabricated hydrophilic Si surface by molecular-dynamics simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nishiyama, Katsuhiko; Hoshino, Tadatsugu; Graduate School of Pharmaceutical Sciences, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522

2007-05-21

Interactions between luciferase and a nanofabricated hydrophilic Si surface were explored by molecular-dynamics simulations. The structural changes in the active-site residues, the residues affecting the luciferin binding, and the residues affecting the bioluminescence color were smaller on the nanofabricated hydrophilic Si surface than on both a hydrophobic Si surface and a hydrophilic Si surface. The nanofabrication and wet-treatment techniques are expected to prevent the decrease in activity of luciferase on the Si surface.

Application of surface-enhanced Raman spectroscopy (SERS) for cleaning verification in pharmaceutical manufacture.

PubMed

Corrigan, Damion K; Cauchi, Michael; Piletsky, Sergey; Mccrossen, Sean

2009-01-01

Cleaning verification is the process by which pharmaceutical manufacturing equipment is determined as sufficiently clean to allow manufacture to continue. Surface-enhanced Raman spectroscopy (SERS) is a very sensitive spectroscopic technique capable of detection at levels appropriate for cleaning verification. In this paper, commercially available Klarite SERS substrates were employed in order to obtain the necessary enhancement of signal for the identification of chemical species at concentrations of 1 to 10 ng/cm2, which are relevant to cleaning verification. The SERS approach was combined with principal component analysis in the identification of drug compounds recovered from a contaminated steel surface.

Cleanliness audit of clinical surfaces and equipment: who cleans what?

PubMed

Anderson, R E; Young, V; Stewart, M; Robertson, C; Dancer, S J

2011-07-01

Current guidelines recommend regular cleaning of clinical equipment. We monitored items on a surgical ward for predominant user, hand-touch frequency, cleaning responsibilities and measurement of organic soil. Equipment was assessed in triplicate against a cleanliness benchmark of 100 relative light units (RLU) using the Hygiena® ATP system. There were 44 items, of which 21 were cleaned by clinical support workers (CSWs), five by domestic staff; three by nurses, three by doctors, and 12 with no designated cleaning responsibility. Geometric mean RLUs ranged from 60 to 550/100 cm² for small items such as hand-gel containers, bed control, blood pressure cuff and clinical notes; with similar values of 80-540/100 cm² RLU for larger items such as electrocardiogram machine, defibrillator, trolleys and tables. Overall geometric mean was 249/100 cm² RLU for all surfaces, with 84% (37 of 44) items exceeding the 100RLU benchmark. Of 27 items cleaned by clinical staff, 24 (89%) failed the benchmark. Of 12 sites with no cleaning specification, 11 (92%) failed the benchmark. Three of seven 'clean' sites (<100/100 cm² RLU) were cleaned by domestic staff. Average log(10) RLU of surfaces cleaned by domestics were 64% lower compared with surfaces cleaned by CSWs (95% confidence interval: 35%, 80%; P=0.019). In conclusion, clinical equipment frequently demonstrates high levels of organic soil, whether or not items have assigned cleaning responsibility. These findings suggest that cleaning practices for clinical equipment may require review, along with education of staff with specific cleaning responsibilities. Copyright © 2011 The Healthcare Infection Society. Published by Elsevier Ltd. All rights reserved.

Correlating Cleaning Thoroughness with Effectiveness and Briefly Intervening to Affect Cleaning Outcomes: How Clean Is Cleaned?

PubMed Central

Hosford, Eve; Ong, Ana; Richesson, Douglas; Fraser, Susan; Kwak, Yoon; Miller, Sonia; Julius, Michael; McGann, Patrick; Lesho, Emil

2016-01-01

Objectives The most efficient approach to monitoring and improving cleaning outcomes remains unresolved. We sought to extend the findings of a previous study by determining whether cleaning thoroughness (dye removal) correlates with cleaning efficacy (absence of molecular or cultivable biomaterial) and whether one brief educational intervention improves cleaning outcomes. Design Before-after trial. Setting Newly built community hospital. Intervention 90 minute training refresher with surface-specific performance results. Methods Dye removal, measured by fluorescence, and biomaterial removal and acquisition, measured with culture and culture-independent PCR-based assays, were clandestinely assessed for eight consecutive months. At this midpoint, results were presented to the cleaning staff (intervention) and assessments continued for another eight consecutive months. Results 1273 surfaces were sampled before and after terminal room cleaning. In the short-term, dye removal increased from 40.3% to 50.0% (not significant). For the entire study period, dye removal also improved but not significantly. After the intervention, the number of rooms testing positive for specific pathogenic species by culturing decreased from 55.6% to 36.6% (not significant), and those testing positive by PCR fell from 80.6% to 53.7% (P = 0.016). For nonspecific biomaterial on surfaces: a) removal of cultivable Gram-negatives (GN) trended toward improvement (P = 0.056); b) removal of any cultivable growth was unchanged but acquisition (detection of biomaterial on post-cleaned surfaces that were contaminant-free before cleaning) worsened (P = 0.017); c) removal of PCR-based detection of bacterial DNA improved (P = 0.046), but acquisition worsened (P = 0.003); d) cleaning thoroughness and efficacy were not correlated. Conclusion At this facility, a minor intervention or minimally more aggressive cleaning may reduce pathogen-specific contamination, but not without unintended consequences. PMID:27196635

Correlating Cleaning Thoroughness with Effectiveness and Briefly Intervening to Affect Cleaning Outcomes: How Clean Is Cleaned?

PubMed

Clifford, Robert; Sparks, Michael; Hosford, Eve; Ong, Ana; Richesson, Douglas; Fraser, Susan; Kwak, Yoon; Miller, Sonia; Julius, Michael; McGann, Patrick; Lesho, Emil

2016-01-01

The most efficient approach to monitoring and improving cleaning outcomes remains unresolved. We sought to extend the findings of a previous study by determining whether cleaning thoroughness (dye removal) correlates with cleaning efficacy (absence of molecular or cultivable biomaterial) and whether one brief educational intervention improves cleaning outcomes. Before-after trial. Newly built community hospital. 90 minute training refresher with surface-specific performance results. Dye removal, measured by fluorescence, and biomaterial removal and acquisition, measured with culture and culture-independent PCR-based assays, were clandestinely assessed for eight consecutive months. At this midpoint, results were presented to the cleaning staff (intervention) and assessments continued for another eight consecutive months. 1273 surfaces were sampled before and after terminal room cleaning. In the short-term, dye removal increased from 40.3% to 50.0% (not significant). For the entire study period, dye removal also improved but not significantly. After the intervention, the number of rooms testing positive for specific pathogenic species by culturing decreased from 55.6% to 36.6% (not significant), and those testing positive by PCR fell from 80.6% to 53.7% (P = 0.016). For nonspecific biomaterial on surfaces: a) removal of cultivable Gram-negatives (GN) trended toward improvement (P = 0.056); b) removal of any cultivable growth was unchanged but acquisition (detection of biomaterial on post-cleaned surfaces that were contaminant-free before cleaning) worsened (P = 0.017); c) removal of PCR-based detection of bacterial DNA improved (P = 0.046), but acquisition worsened (P = 0.003); d) cleaning thoroughness and efficacy were not correlated. At this facility, a minor intervention or minimally more aggressive cleaning may reduce pathogen-specific contamination, but not without unintended consequences.

Properties Data for Adhesion and Surface Chemistry of Aluminum: Sapphire-Aluminum, Single-Crystal Couple

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa; Pohlchuck, Bobby; Whitle, Neville C.; Hector, Louis G., Jr.; Adams, Jim

1998-01-01

An investigation was conducted to examine the adhesion and surface chemistry of single-crystal aluminum in contact with single-crystal sapphire (alumina). Pull-off force (adhesion) measurements were conducted under loads of 0. I to I mN in a vacuum of 10(exp -1) to 10(exp -9) Pa (approx. 10(exp -10) to 10(exp -11) torr) at room temperature. An Auger electron spectroscopy analyzer incorporated directly into an adhesion-measuring vacuum system was primarily used to define the chemical nature of the surfaces before and after adhesion measurements. The surfaces were cleaned by argon ion sputtering. With a clean aluminum-clean -sapphire couple the mean value and standard deviation of pull-off forces required to separate the surfaces were 3015 and 298 micro-N, respectively. With a contaminated aluminum-clean sapphire couple these values were 231 and 241 micro-N. The presence of a contaminant film on the aluminum surface reduced adhesion by a factor of 13. Therefore, surfaces cleanliness, particularly aluminum cleanliness, played an important role in the adhesion of the aluminum-sapphire couples. Pressures on the order of 10(exp -8) to 10(exp -9) Pa (approx. 10(exp -10) to 10(exp -11) torr) maintained a clean aluminum surface for only a short time (less then 1 hr) but maintained a clean sapphire surface, once it was achieved, for a much longer time.

Synthesis of multifilament silicon carbide fibers by chemical vapor deposition

NASA Technical Reports Server (NTRS)

Revankar, Vithal; Hlavacek, Vladimir

1991-01-01

A process for development of clean silicon carbide fiber with a small diameter and high reliability is presented. An experimental evaluation of operating conditions for SiC fibers of good mechanical properties and devising an efficient technique which will prevent welding together of individual filaments are discussed. The thermodynamic analysis of a different precursor system was analyzed vigorously. Thermodynamically optimum conditions for stoichiometric SiC deposit were obtained.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Horowitz, Kelsey A; Bench Reese, Samantha R; Remo, Timothy W

This brochure, published as an annual research highlight of the Clean Energy Manufacturing Analysis Center (CEMAC), summarizes CEMAC analysis of silicon carbide (SiC) power electronics for variable frequency motor drives. The key finding presented is that variations in manufacturing expertise, yields, and access to existing facilities impact regional costs and manufacturing location decisions for SiC ingots, wafers, chips, and power modules more than do core country-specific factors such as labor and electricity costs.

Scanning tunneling microscopy of atomically precise graphene nanoribbons exfoliated onto H:Si(100)

NASA Astrophysics Data System (ADS)

Radocea, Adrian; Mehdi Pour, Mohammad; Vo, Timothy; Shekhirev, Mikhail; Sinitskii, Alexander; Lyding, Joseph

Atomically precise graphene nanoribbons (GNRs) are promising materials for next generation transistors due to their well-controlled bandgaps and the high thermal conductivity of graphene. The solution synthesis of graphene nanoribbons offers a pathway towards scalable manufacturing. While scanning tunneling microscopy (STM) can access size scales required for characterization, solvent residue increases experimental difficulty and precludes band-gap determination via scanning tunneling spectroscopy (STS). Our work addresses this challenge through a dry contact transfer method that cleanly transfers solution-synthesized GNRs onto H:Si(100) under UHV using a fiberglass applicator. The semiconducting silicon surface avoids problems with image charge screening enabling intrinsic bandgap measurements. We characterize the nanoribbons using STM and STS. For chevron GNRs, we find a 1.6 eV bandgap, in agreement with computational modeling, and map the electronic structure spatially with detailed spectra lines and current imaging tunneling spectroscopy. Mapping the electronic structure of graphene nanoribbons is an important step towards taking advantage of the ability to form atomically precise nanoribbons and finely tune their properties.

Mixed material formation and erosion

NASA Astrophysics Data System (ADS)

Linsmeier, Ch.; Luthin, J.; Goldstraß, P.

2001-03-01

The formation of mixed phases on materials relevant for first wall components of fusion devices is studied under well-defined conditions in ultra-high vacuum (UHV). This is necessary in order to determine fundamental parameters governing the basic processes of chemical reaction, material mixing and erosion. We examined the binary systems comprising of the wall materials beryllium, silicon, tungsten and titanium and carbon, the latter being both a wall material and a plasma impurity. Experiments were carried out to study the interaction of carbon in the form of a vapor-deposited component on clean, well-defined elemental surfaces. The chemical composition and the binding state are measured by X-ray photoelectron spectroscopy (XPS) after annealing treatments. For all materials, a limited carbide formation is found at room temperature. Annealing carbon films on elemental substrate leads to a complete carbidization of the carbon layer. The carbide layers on Be and Si are stable even at very high temperatures, whereas the carbides of Ti and W dissolve. The erosion of these two metals by sputtering is then identical to the pure metals, whereas for Be and Si a protective carbide layer can reduce the sputtering yields.

Depth profiling of hydrogen passivation of boron in Si(100)

NASA Astrophysics Data System (ADS)

Huang, L. J.; Lau, W. M.; Simpson, P. J.; Schultz, P. J.

1992-08-01

The properties of SiO2/p-Si were studied using variable-energy positron-annihilation spectroscopy and Raman spectroscopy. The oxide film was formed by ozone oxidation in the presence of ultraviolet radiation at room temperature. Both the positron-annihilation and Raman analyses show that chemical cleaning of boron-doped p-type Si(100) using concentrated hydrofluoric acid prior to the oxide formation leads to hydrogen incorporation in the semiconductor. The incorporated hydrogen passivates the boron dopant by forming a B-H complex, the presence of which increases the broadening of the line shape in the positron-annihilation analysis, and narrows the linewidth of the Raman peak. Annealing of the SiO2/Si sample at a moderate temperature of 220 °C in vacuum was found sufficient to dissociate the complex and reactivate the boron dopant.

Glow discharge cleaning of vacuum switch tubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hayashi, T.; Toya, H.

1991-10-01

This paper reports that glow discharge cleaning has ben advancing as a means of degassing vacuum chambers constructed for a large accelerator or for nuclear fusion research. To clean the whole surface of parts inside a vacuum switch tube (VST), a new technique is tried which generates glow discharge between the inner electrodes and copper grid surrounding it. Photographic observation reveals that the glow discharge spreads out and cleans the whole surface inside the VST. A breakdown test between the inner electrodes shows the effect of the cleaning with this technique. Higher breakdown voltage between the inner electrodes is attainedmore » by performing this glow discharge cleaning in argon rather than hydrogen gas. The difference of the cleaning effect seems to be attributed to that of the energy transfer from ion species to the absorbed molecules and microprotrusions on the surfaces.« less

Ion-Deposited Polished Coatings

NASA Technical Reports Server (NTRS)

Banks, B. A.

1986-01-01

Polished, dense, adherent coatings relatively free of imperfections. New process consists of using broad-beam ion source in evacuated chamber to ion-clean rotating surface that allows grazing incidence of ion beam. This sputter cleans off absorbed gases, organic contaminants, and oxides of mirror surface. In addition to cleaning, surface protrusions sputter-etched away. Process particularly adaptable to polishing of various substrates for optical or esthetic purposes.

Evaluation of Various Cleaning Methods to Remove Bacillus Spores from Spacecraft Hardware Materials

NASA Technical Reports Server (NTRS)

Venkateswaran, Kasthuri; Chung, Shirley; Allton, Judith; Kern, Roger

2004-01-01

A detailed study was made of the biological cleaning effectiveness, defined in terms of the ability to remove bacterial spores, of a number of methods used to clean hardware surfaces. Aluminum (Al 6061) and titanium (Ti 6Al-4V) were chosen for the study as they were deemed the two materials most likely to be used in spacecraft extraterrestrial sampler construction. None of the cleaning protocols tested completely removed viable spores from the surface of the aluminum. In contrast, titanium was capable of being cleaned to sterility by two methods, the JPL standard and the commercial SAMS cleaning process. Further investigation showed that the passivation step employed in the JPL standard method is an effective surface sterilant on both metals but not compatible with aluminum. It is recommended that titanium (Ti 6Al-4V) be considered superior to aluminum (Al 6061) for use in spacecraft sampling hardware, both for its potential to be cleaned to sterilization and for its ability to withstand the most effective cleaning protocols.

Investigation of the effect of contaminations and cleaning processes on the surface properties of brazing surfaces

NASA Astrophysics Data System (ADS)

Bobzin, K.; Öte, M.; Wiesner, S.

2017-03-01

The quality of brazed joints is determined by different factors such as the atmosphere and the parameters during brazing as well as the condition of the brazing surfaces. Residues of lubricants used during machining of the components and the subsequent cleaning processes can contaminate the faying surfaces and can hence influence the flow ability of the molten filler metals. Besides their influence on the filler metal flow, the residues can result in the formation of carbonic phases in the joint leading to a possible reduction of the corrosion resistance and the mechanical properties. The first step of the current study with the aim of avoiding these defects is to identify the influence of critical contaminations and cleaning methods on the quality of the brazed joints. In a first step, contaminations on AISI304 and Inconel alloy 625 due to different cooling lubricants and the effect of several cleaning methods, in particular plasma cleaning, have been investigated. Information about the surface energy of contaminated and cleaned surfaces was gained by measuring contact angle of testing fluids. Additionally, the lubricants and the resulting contamination products have been analyzed considering the influence of a heat treatment.

Experimental Study of Reciprocating Friction between Rape Stalk and Bionic Nonsmooth Surface Units

PubMed Central

Ma, Zheng; Li, Yaoming; Xu, Lizhang

2015-01-01

Background. China is the largest producer of rape oilseed in the world; however, the mechanization level of rape harvest is relatively low, because rape materials easily adhere to the cleaning screens of combine harvesters, resulting in significant cleaning losses. Previous studies have shown that bionic nonsmooth surface cleaning screens restrain the adhesion of rape materials, but the underlying mechanisms remain unclear. Objective. The reciprocating friction between rape stalk and bionic nonsmooth metal surface was examined. Methods. The short-time Fourier transform method was used to discriminate the stable phase of friction signals and the stick-lag distance was defined to analyze the stable reciprocating friction in a phase diagram. Results. The reciprocating friction between rape stalk and metal surface is a typical stick-slip friction, and the bionic nonsmooth metal surfaces with concave or convex units reduced friction force with increasing reciprocating frequency. The results also showed that the stick-lag distance of convex surface increased with reciprocating frequency, which indicated that convex surface reduces friction force more efficiently. Conclusions. We suggest that bionic nonsmooth surface cleaning screens, especially with convex units, restrain the adhesion of rape materials more efficiently compared to the smooth surface cleaning screens. PMID:27034611

The construction, fouling and enzymatic cleaning of a textile dye surface.

PubMed

Onaizi, Sagheer A; He, Lizhong; Middelberg, Anton P J

2010-11-01

The enzymatic cleaning of a rubisco protein stain bound onto Surface Plasmon Resonance (SPR) biosensor chips having a dye-bound upper layer is investigated. This novel method allowed, for the first time, a detailed kinetic study of rubisco cleanability (defined as fraction of adsorbed protein removed from a surface) from dyed surfaces (mimicking fabrics) at different enzyme concentrations. Analysis of kinetic data using an established mathematical model able to decouple enzyme transfer and reaction processes [Onaizi, He, Middelberg, Chem. Eng. Sci. 64 (2008) 3868] revealed a striking effect of dyeing on enzymatic cleaning performance. Specifically, the absolute rate constants for enzyme transfer to and from a dye-bound rubisco stain were significantly higher than reported previously for un-dyed surfaces. These increased transfer rates resulted in higher surface cleanability. Higher enzyme mobility (i.e., higher enzyme adsorption and desorption rates) at the liquid-dye interface was observed, consistent with previous suggestions that enzyme surface mobility is likely correlated with overall enzyme cleaning performance. Our results show that reaction engineering models of enzymatic action at surfaces may provide insight able to guide the design of better stain-resistant surfaces, and may also guide efforts to improve cleaning formulations. Copyright 2010 Elsevier Inc. All rights reserved.

Multifunctionalization of wool fabrics through nanoparticles: A chemical route towards smart textiles.

PubMed

Mura, Stefania; Greppi, Gianfranco; Malfatti, Luca; Lasio, Barbara; Sanna, Vanna; Mura, Maria Elena; Marceddu, Salvatore; Lugliè, Antonella

2015-10-15

A new approach towards the design of smart nanotextiles with innovative properties is presented. Silica (SiO2), titania (TiO2), and silver (Ag) nanoparticles (NPs), were synthesized without the use of any toxic organic compound and then were used, alone and in combination, to functionalize wool fabrics. Electrostatic forces, influenced by a low pH of the solutions, allowed the interactions between wool fabrics and NPs, enabling a robust functionalization. This was verified by X-ray microfluorescence and visualized by scanning electron microscopy measurements. The antibacterial Ag NPs were embedded in a polymer, alginic acid, to reduce the possible side effect due to their direct contact with the skin. SiO2 NPs, instead, were used to change the hydrophilicity of wool while the functionalization with TiO2 NPs was chosen to provide self-cleaning properties. The antibacterial activity of the fabrics was studied against the bacteria Escherichia coli, while the hydrophilicity of wool was studied by contact angle measurements and the self-cleaning properties were tested by estimating the visible discoloring of a dye stain under sunlight irradiation. Interestingly the combination of three different types of NPs provided the best results. SiO2 and Ag made the wool superhydrophilic providing at the same time the best antibacterial properties, while fabrics with titania (alone or in combination) were hydrophobic and showed the best self-cleaning properties. Copyright © 2015 Elsevier Inc. All rights reserved.

Evidence for self-cleaning in gecko setae

NASA Astrophysics Data System (ADS)

Hansen, W. R.; Autumn, K.

2005-01-01

A tokay gecko can cling to virtually any surface and support its body mass with a single toe by using the millions of keratinous setae on its toe pads. Each seta branches into hundreds of 200-nm spatulae that make intimate contact with a variety of surface profiles. We showed previously that the combined surface area of billions of spatulae maximizes van der Waals interactions to generate large adhesive and shear forces. Geckos are not known to groom their feet yet retain their stickiness for months between molts. How geckos manage to keep their feet clean while walking about with sticky toes has remained a puzzle until now. Although self-cleaning by water droplets occurs in plant and animal surfaces, no adhesive has been shown to self-clean. In the present study, we demonstrate that gecko setae are a self-cleaning adhesive. Geckos with dirty feet recovered their ability to cling to vertical surfaces after only a few steps. Self-cleaning occurred in arrays of setae isolated from the gecko. Contact mechanical models suggest that self-cleaning occurs by an energetic disequilibrium between the adhesive forces attracting a dirt particle to the substrate and those attracting the same particle to one or more spatulae. We propose that the property of self-cleaning is intrinsic to the setal nanostructure and therefore should be replicable in synthetic adhesive materials in the future. adhesion | contact mechanics | locomotion | reptilia | nanotechnology

Surface Cleaning of Iron Artefacts by Lasers

NASA Astrophysics Data System (ADS)

Koh, Y. S.; Sárady, I.

In this paper the general method and ethics of the laser cleaning technique for conservation are presented. The results of two experiments are also presented; experiment 1 compares cleaning of rust by an Nd:YAG laser and micro-blasting whilst experiment 2 deals with removing the wax coating from iron samples by a TEA CO2 laser. The first experiment showed that cleaning with a pulsed laser and higher photon energy obtained a better surface structure than micro blasting. The second experiment showed how differences in energy density affect the same surface.

Precursor-Surface Reactions in Plasma Deposition of Silicon Thin Films

NASA Astrophysics Data System (ADS)

Bakos, Tamas

2005-03-01

Device-quality hydrogenated amorphous silicon (a-Si:H) thin films are usually grown by plasma deposition under conditions where the SiH3 radical is the dominant deposition precursor. In this presentation, we report results of first-principles density functional theory calculations on the interactions of the SiH3 radical with the crystalline Si(100)-(2x1):H surface in conjunction with molecular-dynamics simulations of a-Si:H thin film growth by SiH3 radicals, which elucidate the pathways and energetics of surface reactions that govern important film properties. In particular, we show that an SiH3 radical can insert into strained surface Si-Si dimer bonds, abstract surface H through an Eley-Rideal mechanism, and passivate surface dangling bonds; these reactions follow exothermic and barrierless pathways that lead to a temperature-independent growth rate in agreement with experimental measurements. We also identify a thermally activated surface H abstraction process, in which the SiH3 radical diffuses through overcoordinated surface Si atoms until it encounters a favorable site for H abstraction; the diffusion and H-abstraction steps have commensurate activation barriers. This mechanism explains partly the reduction of the film H content at elevated substrate temperatures.

Removal of lead contaminated dusts from hard surfaces.

PubMed

Lewis, Roger D; Condoor, Sridhar; Batek, Joe; Ong, Kee Hean; Backer, Denis; Sterling, David; Siria, Jeff; Chen, John J; Ashley, Peter

2006-01-15

Government guidelines have widely recommended trisodium phosphate (TSP) or "lead-specific" cleaning detergents for removal of lead-contaminated dust (LCD) from hard surfaces, such as floors and window areas. The purpose of this study was to determine if low-phosphate, non-lead-specific cleaners could be used to efficiently remove LCD from 3 types of surfaces (vinyl flooring, wood, and wallpaper). Laboratory methods were developed and validated for simulating the doping, embedding, and sponge cleaning of the 3 surface types with 4 categories of cleaners: lead-specific detergents, nonionic cleaners, anionic cleaners, and trisodium phosphate (TSP). Vinyl flooring and wood were worn using artificial means. Materials were ashed, followed by ultrasound extraction, and anodic stripping voltammetry (ASV). One-way analysis of variance approach was used to evaluate the surface and detergent effects. Surface type was found to be a significant factor in removal of lead (p < 0.001). Vinyl flooring cleaned better than wallpaper by over 14% and wood cleaned better than wallpaper by 13%. There was no difference between the cleaning action of vinyl flooring and wood. No evidence was found to support the use of TSP or lead-specific detergents over all-purpose cleaning detergents for removal of lead-contaminated dusts. No-phosphate, non-lead-specific detergents are effective in sponge cleaning of lead-contaminated hard surfaces and childhood lead prevention programs should consider recommending all-purpose household detergents for removal of lead-contaminated dust after appropriate vacuuming.

Si1-yCy/Si(001) gas-source molecular beam epitaxy from Si2H6 and CH3SiH3: Surface reaction paths and growth kinetics

NASA Astrophysics Data System (ADS)

Foo, Y. L.; Bratland, K. A.; Cho, B.; Desjardins, P.; Greene, J. E.

2003-04-01

In situ surface probes and postdeposition analyses were used to follow surface reaction paths and growth kinetics of Si1-yCy alloys grown on Si(001) by gas-source molecular-beam epitaxy from Si2H6/CH3SiH3 mixtures as a function of C concentration y (0-2.6 at %) and temperature Ts (500-600 °C). High-resolution x-ray diffraction reciprocal lattice maps show that all layers are in tension and fully coherent with their substrates. Film growth rates R decrease with both y and Ts, and the rate of decrease in R as a function of y increases rapidly with Ts. In situ isotopically tagged D2 temperature-programmed desorption (TPD) measurements reveal that C segregation during steady-state Si1-yCy(001) growth results in charge transfer from Si surface dangling bonds to second-layer C atoms, which have a higher electronegativity than Si. From the TPD results, we obtain the coverage θSi*(y,Ts) of Si* surface sites with C backbonds as well as H2 desorption energies Ed from both Si and Si* surface sites. θSi* increases with increasing y and Ts in the kinetically limited segregation regime while Ed decreases from 2.52 eV for H2 desorption from Si surface sites with Si back bonds to 2.22 eV from Si* surface sites. This leads to an increase in the H2 desorption rate, and hence should yield higher film deposition rates, with increasing y and/or Ts during Si1-yCy(001) growth. The effect, however, is more than offset by the decrease in Si2H6 reactive sticking probabilities at Si* surface sites. Film growth rates R(Ts,JSi2H6,JCH3SiH3) calculated using a simple transition-state kinetic model, together with measured kinetic parameters, were found to be in excellent agreement with the experimental data.

Nanocatalytic growth of Si nanowires from Ni silicate coated SiC nanoparticles on Si solar cell.

PubMed

Parida, Bhaskar; Choi, Jaeho; Ji, Hyung Yong; Park, Seungil; Lim, Gyoungho; Kim, Keunjoo

2013-09-01

We investigated the nanocatalytic growth of Si nanowires on the microtextured surface of crystalline Si solar cell. 3C-SiC nanoparticles have been used as the base for formation of Ni silicate layer in a catalytic reaction with the Si melt under H2 atmosphere at an annealing temperature of 1100 degrees C. The 10-nm thick Ni film was deposited after the SiC nanoparticles were coated on the microtextured surface of the Si solar cell by electron-beam evaporation. SiC nanoparticles form a eutectic alloy surface of Ni silicate and provide the base for Si supersaturation as well as the Ni-Si alloy layer on Si substrate surface. This bottom reaction mode for the solid-liquid-solid growth mechanism using a SiC nanoparticle base provides more stable growth of nanowires than the top reaction mode growth mechanism in the absence of SiC nanoparticles. Thermally excited Ni nanoparticle forms the eutectic alloy and provides collectively excited electrons at the alloy surface, which reduces the activation energy of the nanocatalytic reaction for formation of nanowires.

Photo-assisted Kelvin probe force microscopy investigation of three dimensional GaN structures with various crystal facets, doping types, and wavelengths of illumination

NASA Astrophysics Data System (ADS)

Ali Deeb, Manal; Ledig, Johannes; Wei, Jiandong; Wang, Xue; Wehmann, Hergo-Heinrich; Waag, Andreas

2017-08-01

Three dimensional GaN structures with different crystal facets and doping types have been investigated employing the surface photo-voltage (SPV) method to monitor illumination-induced surface charge behavior using Kelvin probe force microscopy. Various photon energies near and below the GaN bandgap were used to modify the generation of electron-hole pairs and their motion under the influence of the electric field near the GaN surface. Fast and slow processes for Ga-polar c-planes on both Si-doped n-type as well as Mg-doped p-type GaN truncated pyramid micro-structures were found and their origin is discussed. The immediate positive (for n-type) and negative (for p-type) SPV response dominates at band-to-band and near-bandgap excitation, while only the slow process is present at sub-bandgap excitation. The SPV behavior for the semi-polar facets of the p-type GaN truncated pyramids has a similar characteristic to that on its c-plane, which indicates that it has a comparable band bending and no strong influence of the polarity-induced charges is detectable. The SPV behavior of the non-polar m-facets of the Si-doped n-type part of a transferred GaN column is similar to that of a clean c-plane GaN surface during illumination. However, the SPV is smaller in magnitude, which is attributed to intrinsic surface states of m-plane surfaces and their influence on the band bending. The SPV behavior of the non-polar m-facet of the slightly Mg-doped part of this GaN column is found to behave differently. Compared to c- and r-facets of p-type surfaces of GaN-light-emitting diode micro-structures, the m-plane is more chemically stable.

Reduction of Clostridium Difficile and vancomycin-resistant Enterococcus contamination of environmental surfaces after an intervention to improve cleaning methods

PubMed Central

Eckstein, Brittany C; Adams, Daniel A; Eckstein, Elizabeth C; Rao, Agam; Sethi, Ajay K; Yadavalli, Gopala K; Donskey, Curtis J

2007-01-01

Background Contaminated environmental surfaces may play an important role in transmission of some healthcare-associated pathogens. In this study, we assessed the adequacy of cleaning practices in rooms of patients with Clostridium difficile-associated diarrhea (CDAD) and vancomycin-resistant Enterococcus (VRE) colonization or infection and examined whether an intervention would result in improved decontamination of surfaces. Methods During a 6-week period, we cultured commonly touched surfaces (i.e. bedrails, telephones, call buttons, door knobs, toilet seats, and bedside tables) in rooms of patients with CDAD and VRE colonization or infection before and after housekeeping cleaning, and again after disinfection with 10% bleach performed by the research staff. After the housekeeping staff received education and feedback, additional cultures were collected before and after housekeeping cleaning during a 10-week follow-up period. Results Of the 17 rooms of patients with VRE colonization or infection, 16 (94%) had one or more positive environmental cultures before cleaning versus 12 (71%) after housekeeping cleaning (p = 0.125), whereas none had positive cultures after bleach disinfection by the research staff (p < 0.001). Of the 9 rooms of patients with CDAD, 100% had positive cultures prior to cleaning versus 7 (78%) after housekeeping cleaning (p = 0.50), whereas only 1 (11%) had positive cultures after bleach disinfection by research staff (p = 0.031). After an educational intervention, rates of environmental contamination after housekeeping cleaning were significantly reduced. Conclusion Our findings provide additional evidence that simple educational interventions directed at housekeeping staff can result in improved decontamination of environmental surfaces. Such interventions should include efforts to monitor cleaning and disinfection practices and provide feedback to the housekeeping staff. PMID:17584935

Atomic-scale analysis of deposition and characterization of a-Si:H thin films grown from SiH radical precursor

NASA Astrophysics Data System (ADS)

Sriraman, Saravanapriyan; Aydil, Eray S.; Maroudas, Dimitrios

2002-07-01

Growth of hydrogenated amorphous silicon films (a-Si:H) on an initial H-terminated Si(001)(2 x1) substrate at T=500 K was studied through molecular-dynamics (MD) simulations of repeated impingement of SiH radicals to elucidate the effects of reactive minority species on the structural quality of the deposited films. The important reactions contributing to film growth were identified through detailed visualization of radical-surface interaction trajectories. These reactions include (i) insertion of SiH into Si-Si bonds, (ii) adsorption onto surface dangling bonds, (iii) surface H abstraction by impinging SiH radicals through an Eley-Rideal mechanism, (iv) surface adsorption by penetration into subsurface layers or dissociation leading to interstitial atomic hydrogen, (v) desorption of interstitial hydrogen into the gas phase, (vi) formation of higher surface hydrides through the exchange of hydrogen, and (vii) dangling-bond-mediated dissociation of surface hydrides into monohydrides. The MD simulations of a-Si:H film growth predict an overall surface reaction probability of 95% for the SiH radical that is in good agreement with experimental measurements. Structural and chemical characterization of the deposited films was based on the detailed analysis of evolution of the films' structure, surface morphology and roughness, surface reactivity, and surface composition. The analysis revealed that the deposited films exhibit high dangling bond densities and rough surface morphologies. In addition, the films are abundant in voids and columnar structures that are detrimental to producing device-quality a-Si:H thin films.

SEMICONDUCTOR TECHNOLOGY: GaAs surface wet cleaning by a novel treatment in revolving ultrasonic atomization solution

NASA Astrophysics Data System (ADS)

Zaijin, Li; Liming, Hu; Ye, Wang; Ye, Yang; Hangyu, Peng; Jinlong, Zhang; Li, Qin; Yun, Liu; Lijun, Wang

2010-03-01

A novel process for the wet cleaning of GaAs surface is presented. It is designed for technological simplicity and minimum damage generated within the GaAs surface. It combines GaAs cleaning with three conditions consisting of (1) removal of thermodynamically unstable species and (2) surface oxide layers must be completely removed after thermal cleaning, and (3) a smooth surface must be provided. Revolving ultrasonic atomization technology is adopted in the cleaning process. At first impurity removal is achieved by organic solvents; second NH4OH:H2O2:H2O = 1:1:10 solution and HCl: H2O2:H2O = 1:1:20 solution in succession to etch a very thin GaAs layer, the goal of the step is removing metallic contaminants and forming a very thin oxidation layer on the GaAs wafer surface; NH4OH:H2O = 1:5 solution is used as the removed oxide layers in the end. The effectiveness of the process is demonstrated by the operation of the GaAs wafer. Characterization of the oxide composition was carried out by X-ray photoelectron spectroscopy. Metal-contamination and surface morphology was observed by a total reflection X-ray fluorescence spectroscopy and atomic force microscope. The research results show that the cleaned surface is without contamination or metal contamination. Also, the GaAs substrates surface is very smooth for epitaxial growth using the rotary ultrasonic atomization technology.

Contamination removal using various solvents and methodologies

NASA Technical Reports Server (NTRS)

Jeppsen, J. C.

1989-01-01

Critical and non-critical bonding surfaces must be kept free of contamination that may cause potential unbonds. For example, an aft-dome section of a redesigned solid rocket motor that had been contaminated with hydraulic oil did not appear to be sufficiently cleaned when inspected by the optically stimulated electron emission process (Con Scan) after it had been cleaned using a hand double wipe cleaning method. As a result, current and new cleaning methodologies as well as solvent capability in removing various contaminant materials were reviewed and testing was performed. Bonding studies were also done to verify that the cleaning methods used in removing contaminants provide an acceptable bonding surface. The removal of contaminants from a metal surface and the strength of subsequent bonds were tested using the Martin Marietta and double-wipe cleaning methods. Results are reported.

Findings of the U.S. Department of Defense Technology Assessment Team on Japanese High-Temperature Composites February 1989 Visit

DTIC Science & Technology

1993-06-01

I-4 1. Polymer Matrix Composites ................................................... r -4 2. Continuous-Fiber-Reinforced MMCs...Manufacturing CASTEM Casting Analysis System (KOBELCO) C-C Carbon-Carbon ( Composite ) CERASEP SiC - SiC CMC Made by SEP CF Carbon Fiber CFRP Carbon-Fiber...curing operations are done in clean rooms). Most operations are highly automated, with minimal manpower required. Some preceramic polymers appear to have

Mechanisms and energetics of hydride dissociation reactions on surfaces of plasma-deposited silicon thin films

NASA Astrophysics Data System (ADS)

Singh, Tejinder; Valipa, Mayur S.; Mountziaris, T. J.; Maroudas, Dimitrios

2007-11-01

We report results from a detailed analysis of the fundamental silicon hydride dissociation processes on silicon surfaces and discuss their implications for the surface chemical composition of plasma-deposited hydrogenated amorphous silicon (a-Si:H) thin films. The analysis is based on a synergistic combination of first-principles density functional theory (DFT) calculations of hydride dissociation on the hydrogen-terminated Si(001)-(2×1) surface and molecular-dynamics (MD) simulations of adsorbed SiH3 radical precursor dissociation on surfaces of MD-grown a-Si :H films. Our DFT calculations reveal that, in the presence of fivefold coordinated surface Si atoms, surface trihydride species dissociate sequentially to form surface dihydrides and surface monohydrides via thermally activated pathways with reaction barriers of 0.40-0.55eV. The presence of dangling bonds (DBs) results in lowering the activation barrier for hydride dissociation to 0.15-0.20eV, but such DB-mediated reactions are infrequent. Our MD simulations on a-Si :H film growth surfaces indicate that surface hydride dissociation reactions are predominantly mediated by fivefold coordinated surface Si atoms, with resulting activation barriers of 0.35-0.50eV. The results are consistent with experimental measurements of a-Si :H film surface composition using in situ attenuated total reflection Fourier transform infrared spectroscopy, which indicate that the a-Si :H surface is predominantly covered with the higher hydrides at low temperatures, while the surface monohydride, SiH(s ), becomes increasingly more dominant as the temperature is increased.

Chemical resistance and cleanability of glazed surfaces

NASA Astrophysics Data System (ADS)

Hupa, Leena; Bergman, Roger; Fröberg, Linda; Vane-Tempest, Stina; Hupa, Mikko; Kronberg, Thomas; Pesonen-Leinonen, Eija; Sjöberg, Anna-Maija

2005-06-01

Adhesion of soil on glazed surfaces and their cleanability depends on chemical composition, phase composition, and roughness of the surface. The surface can be glossy consisting mainly of a smooth glassy phase. A matt and rough surface consists of a glassy phase and one or more crystalline phases. The origin and composition of the crystalline phases affect the chemical resistance and the cleanability of the surface. Fifteen experimental glossy and matt glazes were soaked in a slightly alkaline cleaning agent solution. The surfaces were spin-coated with sebum, i.e. a soil component typical for sanitary facilities. After wiping out the soil film in a controlled manner, the surface conditions and the soil left were evaluated with colour measurements, SEM/EDXA and COM. The results show that wollastonite-type crystals in the glaze surfaces were attacked in aqueous solutions containing typical cleaning agents. This corrosion led to significant decrease in the cleanability of the surface. The other crystal types observed, i.e. diopside and quartz crystals were not corroded, and the cleanability of glazes containing only these crystals was not changed in the cleaning agent exposures. Also the glassy phase was found to be attacked in some formulations leading to a somewhat decreased cleanability. The repeated soiling and cleaning procedures indicated that soil is accumulated on rough surfaces and surfaces which were clearly corroded by the cleaning agent.

Precision cleaning apparatus and method

DOEpatents

Schneider, T.W.; Frye, G.C.; Martin, S.J.

1998-01-13

A precision cleaning apparatus and method are disclosed. The precision cleaning apparatus includes a cleaning monitor further comprising an acoustic wave cleaning sensor such as a quartz crystal microbalance (QCM), a flexural plate wave (FPW) sensor, a shear horizontal acoustic plate mode (SH--APM) sensor, or a shear horizontal surface acoustic wave (SH--SAW) sensor; and measurement means connectable to the sensor for measuring in-situ one or more electrical response characteristics that vary in response to removal of one or more contaminants from the sensor and a workpiece located adjacent to the sensor during cleaning. Methods are disclosed for precision cleaning of one or more contaminants from a surface of the workpiece by means of the cleaning monitor that determines a state of cleanliness and any residual contamination that may be present after cleaning; and also for determining an effectiveness of a cleaning medium for removing one or more contaminants from a workpiece. 11 figs.

Precision cleaning apparatus and method

DOEpatents

Schneider, Thomas W.; Frye, Gregory C.; Martin, Stephen J.

1998-01-01

A precision cleaning apparatus and method. The precision cleaning apparatus includes a cleaning monitor further comprising an acoustic wave cleaning sensor such as a quartz crystal microbalance (QCM), a flexural plate wave (FPW) sensor, a shear horizontal acoustic plate mode (SH--APM) sensor, or a shear horizontal surface acoustic wave (SH--SAW) sensor; and measurement means connectable to the sensor for measuring in-situ one or more electrical response characteristics that vary in response to removal of one or more contaminants from the sensor and a workpiece located adjacent to the sensor during cleaning. Methods are disclosed for precision cleaning of one or more contaminants from a surface of the workpiece by means of the cleaning monitor that determines a state of cleanliness and any residual contamination that may be present after cleaning; and also for determining an effectiveness of a cleaning medium for removing one or more contaminants from a workpiece.

Evaluation of various cleaning methods to remove bacillus spores from spacecraft hardware materials

NASA Technical Reports Server (NTRS)

Venkateswaran, Kasthuri; Chung, Shirley; Allton, Judith; Kern, Roger

2004-01-01

A detailed study was made of the biological cleaning effectiveness, defined in terms of the ability to remove bacterial spores, of a number of methods used to clean hardware surfaces. Aluminum (Al 6061) and titanium (Ti 6Al-4V) were chosen for the study as they were deemed the two materials most likely to be used in spacecraft extraterrestrial sampler construction. Metal coupons (1 cm x 2.5 cm) were precleaned and inoculated with 5.8 x 10(3) cultivable Bacillus subtilis spores, which are commonly found on spacecraft surfaces and in the assembly environments. The inoculated coupons were subsequently cleaned using: (1) 70% isopropyl alcohol wipe; (2) water wipe; (3) multiple-solvent flight-hardware cleaning procedures used at the Jet Propulsion Laboratory (JPL); (4) Johnson Space Center-developed ultrapure water rinse; and (5) a commercial, semi-aqueous, multiple-solvent (SAMS) cleaning process. The biological cleaning effectiveness was measured by agar plate assay, sterility test (growing in liquid media), and epifluorescent microscopy. None of the cleaning protocols tested completely removed viable spores from the surface of the aluminum. In contrast, titanium was capable of being cleaned to sterility by two methods, the JPL standard and the commercial SAMS cleaning process. Further investigation showed that the passivation step employed in the JPL standard method is an effective surface sterilant on both metals but not compatible with aluminum. It is recommended that titanium (Ti 6Al-4V) be considered superior to aluminum (Al 6061) for use in spacecraft sampling hardware, both for its potential to be cleaned to sterilization and for its ability to withstand the most effective cleaning protocols.

Evaluation of Various Cleaning Methods to Remove Bacillus Spores from Spacecraft Hardware Materials

NASA Astrophysics Data System (ADS)

Venkateswaran, Kasthuri; Chung, Shirley; Allton, Judith; Kern, Roger

2004-09-01

A detailed study was made of the biological cleaning effectiveness, defined in terms of the ability to remove bacterial spores, of a number of methods used to clean hardware surfaces. Aluminum (Al 6061) and titanium (Ti 6Al-4V) were chosen for the study as they were deemed the two materials most likely to be used in spacecraft extraterrestrial sampler construction. Metal coupons (1 cm × 2.5 cm) were precleaned and inoculated with 5.8 × 103 cultivable Bacillus subtilis spores, which are commonly found on spacecraft surfaces and in the assembly environments. The inoculated coupons were subsequently cleaned using: (1) 70% isopropyl alcohol wipe; (2) water wipe; (3) multiple-solvent flight-hardware cleaning procedures used at the Jet Propulsion Laboratory (JPL); (4) Johnson Space Center-developed ultrapure water rinse; and (5) a commercial, semi-aqueous, multiple-solvent (SAMS) cleaning process. The biological cleaning effectiveness was measured by agar plate assay, sterility test (growing in liquid media), and epifluorescent microscopy. None of the cleaning protocols tested completely removed viable spores from the surface of the aluminum. In contrast, titanium was capable of being cleaned to sterility by two methods, the JPL standard and the commercial SAMS cleaning process. Further investigation showed that the passivation step employed in the JPL standard method is an effective surface sterilant on both metals but not compatible with aluminum. It is recommended that titanium (Ti 6Al-4V) be considered superior to aluminum (Al 6061) for use in spacecraft sampling hardware, both for its potential to be cleaned to sterilization and for its ability to withstand the most effective cleaning protocols.

Evaluation of various cleaning methods to remove bacillus spores from spacecraft hardware materials.

PubMed

Venkateswaran, Kasthuri; Chung, Shirley; Allton, Judith; Kern, Roger

2004-01-01

A detailed study was made of the biological cleaning effectiveness, defined in terms of the ability to remove bacterial spores, of a number of methods used to clean hardware surfaces. Aluminum (Al 6061) and titanium (Ti 6Al-4V) were chosen for the study as they were deemed the two materials most likely to be used in spacecraft extraterrestrial sampler construction. Metal coupons (1 cm x 2.5 cm) were precleaned and inoculated with 5.8 x 10(3) cultivable Bacillus subtilis spores, which are commonly found on spacecraft surfaces and in the assembly environments. The inoculated coupons were subsequently cleaned using: (1) 70% isopropyl alcohol wipe; (2) water wipe; (3) multiple-solvent flight-hardware cleaning procedures used at the Jet Propulsion Laboratory (JPL); (4) Johnson Space Center-developed ultrapure water rinse; and (5) a commercial, semi-aqueous, multiple-solvent (SAMS) cleaning process. The biological cleaning effectiveness was measured by agar plate assay, sterility test (growing in liquid media), and epifluorescent microscopy. None of the cleaning protocols tested completely removed viable spores from the surface of the aluminum. In contrast, titanium was capable of being cleaned to sterility by two methods, the JPL standard and the commercial SAMS cleaning process. Further investigation showed that the passivation step employed in the JPL standard method is an effective surface sterilant on both metals but not compatible with aluminum. It is recommended that titanium (Ti 6Al-4V) be considered superior to aluminum (Al 6061) for use in spacecraft sampling hardware, both for its potential to be cleaned to sterilization and for its ability to withstand the most effective cleaning protocols.

Ionic strength effects on silicic acid (H4SiO4) sorption and oligomerization on an iron oxide surface: an interesting interplay between electrostatic and chemical forces.

PubMed

Hamid, Rossuriati Dol; Swedlund, Peter J; Song, Yantao; Miskelly, Gordon M

2011-11-01

The effect of ionic strength on reactions at aqueous interfaces can provide insights into the nature of the chemistry involved. The adsorption of H(4)SiO(4) on iron oxides at low surface silicate concentration (Γ(Si)) forms monomeric silicate complexes with Fe-O-Si linkages, but as Γ(Si) increases silicate oligomers with Si-O-Si linkages become increasingly prevalent. In this paper, the effect of ionic strength (I) on both Γ(Si) and the extent of silicate oligomerization on the ferrihydrite surface is determined at pH 4, 7, and 10, where the surface is, respectively, positive, nearly neutral, and negatively charged. At pH 4, an increase in ionic strength causes Γ(Si) to decrease at a given H(4)SiO(4) solution concentration, while the proportion of oligomers on the surface at a given Γ(Si) increases. At pH 10, the opposite is observed; Γ(Si) increases as I increases, while the proportion of surface oligomers at a given Γ(Si) decreases. Ionic strength has only a small effect on the surface chemistry of H(4)SiO(4) at pH 7, but at low Γ(Si) this effect is in the direction observed at pH 4 while at high Γ(Si) the effect is in the direction observed at pH 10. The pH where the surface has zero charge decreases from ≈8 to 6 as Γ(Si) increases so that the surface potential (Ψ) is positive at pH 4 for all Γ(Si) and at pH 7 with low Γ(Si). Likewise, Ψ < 0 at pH 10 for all Γ(Si) and at pH 7 with high Γ(Si). The diffuse layer model is used to unravel the complex and subtle interactions between surface potential (Ψ) and chemical parameters that influence interfacial silicate chemistry. This analysis reveals that the decrease in the absolute value of Ψ as I increases causes Γ(Si) to decrease or increase where Ψ is, respectively, positive or negative. Therefore, at a given Γ(Si), the solution H(4)SiO(4) concentration changes with I, and because oligomerization has a higher H(4)SiO(4) stoichiometry coefficient than monomer adsorption, this results in the observed dependence of the extent of silicate oligomerization on I.

Integrated three-dimensional photonic nanostructures for achieving near-unity solar absorption and superhydrophobicity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuang, Ping; Lin, Shawn-Yu, E-mail: sylin@rpi.edu; Hsieh, Mei-Li

2015-06-07

In this paper, we proposed and realized 3D photonic nanostructures consisting of ultra-thin graded index antireflective coatings (ARCs) and woodpile photonic crystals. The use of the integrated ARC and photonic crystal structure can achieve broadband, broad-angle near unity solar absorption. The amorphous silicon based photonic nanostructure experimentally shows an average absorption of ∼95% for λ = 400–620 nm over a wide angular acceptance of θ = 0°–60°. Theoretical studies show that a Gallium Arsenide (GaAs) based structure can achieve an average absorption of >95% for λ = 400–870 nm. Furthermore, the use of the slanted SiO{sub 2} nanorod ARC surface layer by glancing angle deposition exhibits Cassie-Baxter statemore » wetting, and superhydrophobic surface is obtained with highest water contact angle θ{sub CB} ∼ 153°. These properties are fundamentally important for achieving maximum solar absorption and surface self-cleaning in thin film solar cell applications.« less

What's on the Surface? Physics and Chemistry of Delta-Doped Surfaces

NASA Technical Reports Server (NTRS)

Hoenk, Michael

2011-01-01

Outline of presentation: 1. Detector surfaces and the problem of stability 2. Delta-doped detectors 3. Physics of Delta-doped Silicon 4. Chemistry of the Si-SiO2 Interface 5. Physics and Chemistry of Delta-doped Surfaces a. Compensation b. Inversion c. Quantum exclusion. Conclusions: 1. Quantum confinement of electrons and holes dominates the behavior of delta-doped surfaces. 2. Stability of delta-doped detectors: Delta-layer creates an approx 1 eV tunnel barrier between bulk and surface. 3. At high surface charge densities, Tamm-Shockley states form at the surface. 4. Surface passivation by quantum exclusion: Near-surface delta-layer suppresses T-S trapping of minority carriers. 5. The Si-SiO2 interface compensates the surface 6. For delta-layers at intermediate depth, surface inversion layer forms 7. Density of Si-SiO2 interface charge can be extremely high (>10(exp 14)/sq cm)

Tuning the Outward to Inward Swelling in Lithiated Silicon Nanotubes via Surface Oxide Coating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jiangwei; Luo, Hao; Liu, Yang

2016-09-14

The electrochemically-induced mechanical degradation hinders the application of Si anodes in advanced lithium-ion batteries. Hollow structures and surface coatings have been often used to mitigate the degradation of Si-based anodes. However, the structural change and degradation mechanism during lithiation/delithiation of hollow Si structures with coatings remain unclear. Here, we combine in situ TEM experiment and chemomechanical modeling to study the electrochemically induced swelling of amorphous-Si (a-Si) nanotubes with different thicknesses of surface SiOx layers. Surprisingly, we find that no inward expansion occurs at the inner surface during lithiation of a-Si nanotubes with native oxides. In contrast, inward expansion can bemore » induced by increasing the thickness of SiOx on the outer surface. Moreover, both the sandwich lithiation mechanism and two-stage lithiation process in a-Si nanotubes remain unchanged with the increasing thickness of surface coatings. Our chemomechanical modeling reveals the mechanical confinement effects in lithiated a-Si nanotubes with and without SiOx coatings. This work not only provides insights into the degradation of nanotube anodes with surface coatings, but also sheds light onto the optimal design of hollow anodes for high-performance lithium-ion batteries.« less

[Importance of cleaning and disinfection of critical surfaces in dental health services. Impact of an intervention program].

PubMed

Véliz, Elena; Vergara, Teresa; Pearcy, Mercedes; Dabanch, Jeannette

Introduction Dental care has become a challenge for healthcare associated infection prevention programs, since the environment, within other factors, plays an important role in the transmission chain. Materials and Methods An intervention program was designed for the Dental Unit of Hospital Militar de Santiago, between years 2014 and 2015. The program contemplated 3 stages: diagnostic, intervention and evaluation stage. Objective To improve the safety of critical surfaces involved in dental healthcare. Results During the diagnostic stage, the cleaning and disinfection process was found to be deficient. The most contaminated critical surface was the instrument holder unit, then the clean area and lamp handle. The surfaces that significantly reduced their contamination, after the intervention, were the clean area and the instrument carrier unit. Conclusion Training in the processes of cleaning and disinfecting surfaces and dental equipment is one of the cost-effective strategies in preventing healthcare-associated infections (HCAI), with simple and easy-to-apply methods.

Interface Engineering to Create a Strong Spin Filter Contact to Silicon

NASA Astrophysics Data System (ADS)

Caspers, C.; Gloskovskii, A.; Gorgoi, M.; Besson, C.; Luysberg, M.; Rushchanskii, K. Z.; Ležaić, M.; Fadley, C. S.; Drube, W.; Müller, M.

2016-03-01

Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directly on silicon is a perfect route to enrich silicon nanotechnology with spin filter functionality. To date, the inherent chemical reactivity between EuO and Si has prevented a heteroepitaxial integration without significant contaminations of the interface with Eu silicides and Si oxides. We present a solution to this long-standing problem by applying two complementary passivation techniques for the reactive EuO/Si interface: (i) an in situ hydrogen-Si (001) passivation and (ii) the application of oxygen-protective Eu monolayers-without using any additional buffer layers. By careful chemical depth profiling of the oxide-semiconductor interface via hard x-ray photoemission spectroscopy, we show how to systematically minimize both Eu silicide and Si oxide formation to the sub-monolayer regime-and how to ultimately interface-engineer chemically clean, heteroepitaxial and ferromagnetic EuO/Si (001) in order to create a strong spin filter contact to silicon.

Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

NASA Astrophysics Data System (ADS)

van de Loo, B. W. H.; Ingenito, A.; Verheijen, M. A.; Isabella, O.; Zeman, M.; Kessels, W. M. M.

2017-06-01

Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.

Fogging technique used to coat magnesium with plastic

NASA Technical Reports Server (NTRS)

Mroz, T. S.

1967-01-01

Cleaning process and a fogging technique facilitate the application of a plastic coating to magnesium plates. The cleaning process removes general organic and inorganic surface impurities, oils and greases, and oxides and carbonates from the magnesium surfaces. The fogging technique produces a thin-filmlike coating in a clean room atmosphere.

Impact of pulsed xenon ultraviolet disinfection on surface contamination in a hospital facility's expressed human milk feed preparation area.

PubMed

Dippenaar, Ricky; Smith, Johan

2018-02-23

Expressed human milk (EHM) feed preparation areas represent a potential source of unintentional nosocomial infection. Daily disinfection of environmental surfaces remains an essential intervention to mitigate nosocomial infections. The inefficiency of conventional cleaning and disinfection contributes to an increased risk for the acquisition of multi-drug resistant pathogens. "Non touch" technologies such as the pulsed xenon ultraviolet (PX-UVD) light device have documented sustained reduction in surface bacterial colonization and reduced cross contamination. The impact of a PX-UVD on surface colony forming units per square centimeter (cfu/cm 2 ) in feed preparation areas was evaluated following its implementation as standard care. A quasi-experimental study was performed documenting bacterial colonization from 6 high risk feed preparation areas in a community care hospital in South Africa. Pre and post conventional cleaning neutralizing rinse swabs were collected fortnightly over a 16 week control period prior to the introduction of the PX-UVD and compared to a matching set of samples for the PX-UVD period. A 90% reduction in total surface bioburden was noted from the control period (544 cfu/cm 2 ) compared to the corresponding PX-UVD period (50 cfu/cm 2 ). Sub -analysis of both the Pre-clean Control: Pre-clean PX-UVD counts as well as the Post-clean Control: Post-clean PX-UVD counts noted significant improvements (p < 0.001). A statistically significant improvement was noted between pre-and post-cleaning total surface bioburden following exposure to the PX-UVD (p = 0.0004). The introduction of the PX-UVD was associated with a sustained reduction in the pre clean bioburden counts with a risk trend (per week) 0.19, (95% CI [0.056, 0.67], p = 0.01). The use of a PX-UVD as adjunct to standard cleaning protocols was associated with a significant decrease in surface bioburden. The study demonstrated the inefficiency of conventional cleaning. Persistence of potentially pathological species in both periods highlights current health sector challenges.

Evaluating a new paradigm for comparing surface disinfection in clinical practice.

PubMed

Carling, Philip C; Perkins, Jennifer; Ferguson, JoAnn; Thomasser, Anita

2014-11-01

Despite an increasing understanding of the importance of near-patient surfaces in the transmission of healthcare-associated pathogens, there remains a need to define the relative clinical effectiveness of disinfection interventions. A serial 2-phase evaluation of the clinical effectiveness of 2 surface disinfectants. A general acute care hospital. A unique system for quantifying bioburden reduction while monitoring the possible impact of differences in cleaning thoroughness was used to compare the clinical effectiveness of a traditional quaternary ammonium compound (QAC) and a novel peracetic acid/hydrogen peroxide disinfectant (ND) as part of terminal room cleaning. As a result of QAC cleaning, 93 (40%) of 237 cleaned surfaces confirmed by fluorescent marker (DAZO) removal were found to have complete removal of aerobic bioburden. During the ND phase of the study, bioburden was removed from 211 (77%) of 274 cleaned surfaces. Because there was no difference in the thoroughness of cleaning with either disinfectant (65.3% and 66.4%), the significant ([Formula: see text]) difference in bioburden reduction can be attributed to better cleaning efficacy with the ND. In the context of the study design, the ND was 1.93 times more effective in removing bacterial burden than the QAC ([Formula: see text]). Furthermore, the study design represents a new research paradigm in which 2 interventions can be compared by concomitantly and objectively analyzing both the product and process variables in a manner that can be used to define the relative effectiveness of all disinfection cleaning interventions.

Topics in the mechanics of self-organizing systems

NASA Astrophysics Data System (ADS)

Tambe, Dhananjay

Self-organization, in one of its accepted definitions, is the appearance of non-random structures in a system without explicit constraints from forces outside the system. In this thesis two self-organizing systems are studied from the viewpoint of mechanics. In the first system---semiconductor crystal surfaces---the internal constraints that lead to self-assembly of nanoscale structures on silicon-germanium (SiGe) films are studied. In the second system---actin cytoskeleton---a consequence of dynamic self-organization of actin filaments in the form of motion of micron-sized beads through a cytoplasmic medium is studied. When Ge film is deposited on Si(001) substrate, nanoscale features form on the surface and self-organize by minimizing energy contributions from the surface and the strain resulting from difference in lattice constants of the film and the substrate. Clean Si(001) and Ge(001) surfaces are very similar, but experiments to date have shown that atomic scale defects such as dimer-vacancies self-organize into vacancy lines only on Si(001). Through atomic simulations, we show that the observed difference originate from the magnitude of compressive surface strain which reduces formation energy of the dimer-vacancies. During initial stages of the film deposition, the surface is composed of steps and vacancy lines organized in periodic patterns. Using theory of elasticity and atomic simulations we show that these line defects self-organize due to monopolar nature of steps and dipolar nature of the vacancy lines. This self-organized pattern further develops to form pyramidal islands bounded with (105) facets and high Ge content. Mismatch strain of the island is then reduced by incorporation of Si from the substrate surrounding the island leaving behind trenches whose depth is proportional to the basewidth of the island. Using finite element simulations we show that such a relationship is an outcome of competition between elastic energy and surface energy. Some experimental studies also report observation of steeper (103) and (104) facets on pyramidal islands. Using numerical simulations we derive a phase diagram which shows that the steeper facets are stabilized because they provide better relaxation of mismatch strain with only slight increase in surface energy. In the second system, the actin cytoskeleton is a key structural and propulsion element of eukaryotic cells. Micron-sized "cargoes", which under pathological conditions include bacteria, are propelled by dynamic self-organization of the actin filaments. Recently it is shown that the trajectories of a bacterium, Listeria monocytogenes, propelled by actin filaments are periodic; implying that the organization of actin filaments impart an effective force that spins about the axis of the bacterium. We show that the motion of spherical beads is also non-random; the effective force has an additional degree of freedom due to the spherical symmetry of the bead. Agreement of the theoretical trajectories with experimental observations suggest that the actin-based motility can be generally described using deterministic equations. We also propose microscopic basis for the effective force model which can guide development of microscopic theory to predict the long term trajectories of actin propelled objects.

Silane Modification of Glass and Silica Surfaces to Obtain Equally Oil-Wet Surfaces in Glass-Covered Silicon Micromodel Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grate, Jay W.; Warner, Marvin G.; Pittman, Jonathan W.

2013-08-05

The wettability of silicon and glass surfaces can be modified by silanization. However, similar treatments of glass and silica surfaces using the same silane do not necessarily yield the same wettability as determined by the oil-water contact angle. In this technical note, surface cleaning pretreatments were investigated to determine conditions that would yield oil-wet surfaces on glass with similar wettability to silica surfaces treated with the same silane, and both air-water and oil-water contact angles were determined. Air-water contact angles were less sensitive to differences between silanized silica and glass surfaces, often yielding similar values while the oil-water contact anglesmore » were quite different. Borosilicate glass surfaces cleaned with standard cleaning solution 1 (SC1) yield intermediate-wet surfaces when silanized with hexamethyldisilazane, while the same cleaning and silanization yields oil-wet surfaces on silica. However, cleaning glass in boiling concentrated nitric acid creates a surface that can be silanized to obtain oil-wet surfaces using HDMS. Moreover, this method is effective on glass with prior thermal treatment at an elevated temperature of 400oC. In this way, silica and glass can be silanized to obtain equally oil-wet surfaces using HMDS. It is demonstrated that pretreatment and silanization is feasible in silicon-silica/glass micromodels previously assembled by anodic bonding, and that the change in wettability has a significant observable effect on immiscisble fluid displacements in the pore network.« less

Phase Equilibria of ``Cu2O''-``FeO''-CaO-MgO-Al2O3 Slags at PO2 of 10-8.5 atm in Equilibrium with Metallic Copper for a Copper Slag Cleaning Production

NASA Astrophysics Data System (ADS)

Henao, Hector M.; Pizarro, Claudio; Font, Jonkion; Moyano, Alex; Hayes, Peter C.; Jak, Evgueni

2010-12-01

Limited data are available on phase equilibria of the multicomponent slag system at the oxygen partial pressures used in the copper smelting, converting, and slag-cleaning processes. Recently, experimental procedures have been developed and have been applied successfully to characterize several complex industrial slags. The experimental procedures involve high-temperature equilibration on a substrate and quenching followed by electron probe X-ray microanalysis. This technique has been used to construct the liquidus for the “Cu2O”-“FeO”-SiO2-based slags with 2 wt pct of CaO, 0.5 wt pct of MgO, and 4.0 wt pct of Al2O3 at controlled oxygen partial pressures in equilibrium with metallic copper. The selected ranges of compositions and temperatures are directly relevant to the copper slag-cleaning processes. The new experimental equilibrium results are presented in the form of ternary sections and as a liquidus temperature vs Fe/SiO2 weight ratio diagram. The experimental results are compared with the FactSage thermodynamic model calculations.

Surface etching technologies for monocrystalline silicon wafer solar cells

NASA Astrophysics Data System (ADS)

Tang, Muzhi

With more than 200 GW of accumulated installations in 2015, photovoltaics (PV) has become an important green energy harvesting method. The PV market is dominated by solar cells made from crystalline silicon wafers. The engineering of the wafer surfaces is critical to the solar cell cost reduction and performance enhancement. Therefore, this thesis focuses on the development of surface etching technologies for monocrystalline silicon wafer solar cells. It aims to develop a more efficient alkaline texturing method and more effective surface cleaning processes. Firstly, a rapid, isopropanol alcohol free texturing method is successfully demonstrated to shorten the process time and reduce the consumption of chemicals. This method utilizes the special chemical properties of triethylamine, which can form Si-N bonds with wafer surface atoms. Secondly, a room-temperature anisotropic emitter etch-back process is developed to improve the n+ emitter passivation. Using this method, 19.0% efficient screen-printed aluminium back surface field solar cells are developed that show an efficiency gain of 0.15% (absolute) compared with conventionally made solar cells. Finally, state-of-the-art silicon surface passivation results are achieved using hydrogen plasma etching as a dry alternative to the classical hydrofluoric acid wet-chemical process. The effective native oxide removal and the hydrogenation of the silicon surface are shown to be the reasons for the excellent level of surface passivation achieved with this novel method.

Assessment of disinfection of hospital surfaces using different monitoring methods1

PubMed Central

Ferreira, Adriano Menis; de Andrade, Denise; Rigotti, Marcelo Alessandro; de Almeida, Margarete Teresa Gottardo; Guerra, Odanir Garcia; dos Santos, Aires Garcia

2015-01-01

OBJECTIVE: to assess the efficiency of cleaning/disinfection of surfaces of an Intensive Care Unit. METHOD: descriptive-exploratory study with quantitative approach conducted over the course of four weeks. Visual inspection, bioluminescence adenosine triphosphate and microbiological indicators were used to indicate cleanliness/disinfection. Five surfaces (bed rails, bedside tables, infusion pumps, nurses' counter, and medical prescription table) were assessed before and after the use of rubbing alcohol at 70% (w/v), totaling 160 samples for each method. Non-parametric tests were used considering statistically significant differences at p<0.05. RESULTS: after the cleaning/disinfection process, 87.5, 79.4 and 87.5% of the surfaces were considered clean using the visual inspection, bioluminescence adenosine triphosphate and microbiological analyses, respectively. A statistically significant decrease was observed in the disapproval rates after the cleaning process considering the three assessment methods; the visual inspection was the least reliable. CONCLUSION: the cleaning/disinfection method was efficient in reducing microbial load and organic matter of surfaces, however, these findings require further study to clarify aspects related to the efficiency of friction, its frequency, and whether or not there is association with other inputs to achieve improved results of the cleaning/disinfection process. PMID:26312634

Assessment of disinfection of hospital surfaces using different monitoring methods.

PubMed

Ferreira, Adriano Menis; de Andrade, Denise; Rigotti, Marcelo Alessandro; de Almeida, Margarete Teresa Gottardo; Guerra, Odanir Garcia; dos Santos Junior, Aires Garcia

2015-01-01

to assess the efficiency of cleaning/disinfection of surfaces of an Intensive Care Unit. descriptive-exploratory study with quantitative approach conducted over the course of four weeks. Visual inspection, bioluminescence adenosine triphosphate and microbiological indicators were used to indicate cleanliness/disinfection. Five surfaces (bed rails, bedside tables, infusion pumps, nurses' counter, and medical prescription table) were assessed before and after the use of rubbing alcohol at 70% (w/v), totaling 160 samples for each method. Non-parametric tests were used considering statistically significant differences at p<0.05. after the cleaning/disinfection process, 87.5, 79.4 and 87.5% of the surfaces were considered clean using the visual inspection, bioluminescence adenosine triphosphate and microbiological analyses, respectively. A statistically significant decrease was observed in the disapproval rates after the cleaning process considering the three assessment methods; the visual inspection was the least reliable. the cleaning/disinfection method was efficient in reducing microbial load and organic matter of surfaces, however, these findings require further study to clarify aspects related to the efficiency of friction, its frequency, and whether or not there is association with other inputs to achieve improved results of the cleaning/disinfection process.

Long-term effects of seven cleaning methods on light transmittance, surface roughness, and flexural modulus of polyurethane retainer material.

PubMed

Agarwal, Manika; Wible, Emily; Ramir, Tyler; Altun, Sibel; Viana, Grace; Evans, Carla; Lukic, Henry; Megremis, Spiro; Atsawasuwan, Phimon

2018-05-01

To evaluate the long-term effects of seven different cleaning methods on light transmittance, surface roughness, and flexural modulus of a polyurethane retainer material. Polyurethane retainer specimens (Vivera®, Align Technology Inc) (70 specimens, n = 10 per method, 50.8 mm × 12.7 mm × 1.0 mm) were exposed to seven cleaning methods twice a week for 6 months. Before treatment and after 6 months, light transmittance, surface roughness, and flexural modulus of the specimens were quantified. Qualitative assessment of randomly selected specimens from each solution was performed at baseline and after 6 months using a scanning electron microscope. Statistical analyses were performed at the .05 significance level. Of the three test variables, light transmittance through the specimens was the only one that changed significantly from baseline to 6 months for all cleaning solutions, with all of them causing a decrease. However, except for 0.6% sodium hypochlorite showing a change in surface roughness values and 2.5% vinegar and toothbrushing showing an increase in flexural modulus, none of the other four cleaning methods resulted in significant changes in surface roughness or flexural modulus values for the polyurethane specimens between baseline and after 6 months. Of the seven cleaning methods, Invisalign® cleaning crystals, Polident®, and Listerine® showed the least amount of change in light transmittance values for the polyurethane specimens over 6 months, and they had no effect on surface roughness and flexural modulus values.

Hard surface biocontrol in hospitals using microbial-based cleaning products.

PubMed

Vandini, Alberta; Temmerman, Robin; Frabetti, Alessia; Caselli, Elisabetta; Antonioli, Paola; Balboni, Pier Giorgio; Platano, Daniela; Branchini, Alessio; Mazzacane, Sante

2014-01-01

Healthcare-Associated Infections (HAIs) are one of the most frequent complications occurring in healthcare facilities. Contaminated environmental surfaces provide an important potential source for transmission of many healthcare-associated pathogens, thus indicating the need for new and sustainable strategies. This study aims to evaluate the effect of a novel cleaning procedure based on the mechanism of biocontrol, on the presence and survival of several microorganisms responsible for HAIs (i.e. coliforms, Staphyloccus aureus, Clostridium difficile, and Candida albicans) on hard surfaces in a hospital setting. The effect of microbial cleaning, containing spores of food grade Bacillus subtilis, Bacillus pumilus and Bacillus megaterium, in comparison with conventional cleaning protocols, was evaluated for 24 weeks in three independent hospitals (one in Belgium and two in Italy) and approximately 20000 microbial surface samples were collected. Microbial cleaning, as part of the daily cleaning protocol, resulted in a reduction of HAI-related pathogens by 50 to 89%. This effect was achieved after 3-4 weeks and the reduction in the pathogen load was stable over time. Moreover, by using microbial or conventional cleaning alternatively, we found that this effect was directly related to the new procedure, as indicated by the raise in CFU/m2 when microbial cleaning was replaced by the conventional procedure. Although many questions remain regarding the actual mechanisms involved, this study demonstrates that microbial cleaning is a more effective and sustainable alternative to chemical cleaning and non-specific disinfection in healthcare facilities. This study indicates microbial cleaning as an effective strategy in continuously lowering the number of HAI-related microorganisms on surfaces. The first indications on the actual level of HAIs in the trial hospitals monitored on a continuous basis are very promising, and may pave the way for a novel and cost-effective strategy to counteract or (bio)control healthcare-associated pathogens.

Hard Surface Biocontrol in Hospitals Using Microbial-Based Cleaning Products

PubMed Central

Vandini, Alberta; Temmerman, Robin; Frabetti, Alessia; Caselli, Elisabetta; Antonioli, Paola; Balboni, Pier Giorgio; Platano, Daniela; Branchini, Alessio; Mazzacane, Sante

2014-01-01

Background Healthcare-Associated Infections (HAIs) are one of the most frequent complications occurring in healthcare facilities. Contaminated environmental surfaces provide an important potential source for transmission of many healthcare-associated pathogens, thus indicating the need for new and sustainable strategies. Aim This study aims to evaluate the effect of a novel cleaning procedure based on the mechanism of biocontrol, on the presence and survival of several microorganisms responsible for HAIs (i.e. coliforms, Staphyloccus aureus, Clostridium difficile, and Candida albicans) on hard surfaces in a hospital setting. Methods The effect of microbial cleaning, containing spores of food grade Bacillus subtilis, Bacillus pumilus and Bacillus megaterium, in comparison with conventional cleaning protocols, was evaluated for 24 weeks in three independent hospitals (one in Belgium and two in Italy) and approximately 20000 microbial surface samples were collected. Results Microbial cleaning, as part of the daily cleaning protocol, resulted in a reduction of HAI-related pathogens by 50 to 89%. This effect was achieved after 3–4 weeks and the reduction in the pathogen load was stable over time. Moreover, by using microbial or conventional cleaning alternatively, we found that this effect was directly related to the new procedure, as indicated by the raise in CFU/m2 when microbial cleaning was replaced by the conventional procedure. Although many questions remain regarding the actual mechanisms involved, this study demonstrates that microbial cleaning is a more effective and sustainable alternative to chemical cleaning and non-specific disinfection in healthcare facilities. Conclusions This study indicates microbial cleaning as an effective strategy in continuously lowering the number of HAI-related microorganisms on surfaces. The first indications on the actual level of HAIs in the trial hospitals monitored on a continuous basis are very promising, and may pave the way for a novel and cost-effective strategy to counteract or (bio)control healthcare-associated pathogens. PMID:25259528

Nanoscale-SiC doping for enhancing Jc and Hc2 in superconducting MgB2

NASA Astrophysics Data System (ADS)

Dou, S. X.; Braccini, V.; Soltanian, S.; Klie, R.; Zhu, Y.; Li, S.; Wang, X. L.; Larbalestier, D.

2004-12-01

The effect of nanoscale-SiC doping of MgB2 was investigated in comparison with undoped, clean-limit, and Mg-vapor-exposed samples using transport and magnetic measurements. It was found that there are two distinguishable but related mechanisms that control the critical current-density-field Jc(H ) behavior: increase of upper critical field Hc2 and improvement of flux pinning. There is a clear correlation between the critical temperature Tc, the resistivity ρ, the residual resistivity ratio RRR =R(300K)/R(40K), the irreversibility field H*, and the alloying state in the samples. The Hc2 is about the same within the measured field range for both the Mg-vapor-treated and the SiC-doped samples. However, the Jc(H ) for the latter is higher than the former in a high-field regime by an order of magnitude. Mg vapor treatment induced intrinsic scattering and contributed to an increase in Hc2. SiC doping, on the other hand, introduced many nanoscale precipitates and disorder at B and Mg sites, provoking an increase of ρ(40K ) from 1μΩcm (RRR=15) for the clean-limit sample to 300μΩcm (RRR=1.75) for the SiC-doped sample, leading to significant enhancement of both Hc2 and H * with only a minor effect on Tc. Electron energy-loss spectroscope and transmission electron microscope analysis revealed impurity phases: Mg2Si, MgO, MgB4, BOx, SixByOz, and BC at a scale below 10nm and an extensive domain structure of 2-4-nm domains in the doped sample, which serve as strong pinning centers.

Cleaning of printed circuit assemblies with surface-mounted components

NASA Astrophysics Data System (ADS)

Arzigian, J. S.

The need for ever-increasing miniaturization of airborne instrumentation through the use of surface mounted components closely placed on printed circuit boards highlights problems with traditional board cleaning methods. The reliability of assemblies which have been cleaned with vapor degreasing and spray cleaning can be seriously compromised by residual contaminants leading to solder joint failure, board corrosion, and even electrical failure of the mounted parts. In addition, recent government actions to eliminate fully halogenated chlorofluorocarbons (CFC) and chlorinated hydrocarbons from the industrial environment require the development of new cleaning materials and techniques. This paper discusses alternative cleaning materials and techniques and results that can be expected with them. Particular emphasis is placed on problems related to surface-mounted parts. These new techniques may lead to improved circuit reliability and, at the same time, be less expensive and less environmentally hazardous than the traditional systems.

Lifetime Extension of the Gas Discharge Detectors with Plasma Etching of Silicon Deposits in 80%CF4 + 20%CO2

NASA Astrophysics Data System (ADS)

Gavrilov, G. E.; Vakhtel, V. M.; Maysuzenko, D. A.; Tavtorkina, T. A.; Fetisov, A. A.; Shvetsova, N. Yu.

2017-12-01

A method of elimination of silicon compounds from the anode wire of an aged proportional counter is presented. The aging of a counter with a 70%Ar + 30%CO2 and a 60%Ar + 30%CO2 + 10%CF4 working mixture was stimulated by a 90Sr β source. To accelerate the process of aging, the gas mixture flow to the counter was supplied through a pipe with RTV coated wall. As a result, the amplitude of the signal decreased 70% already at accumulated charge of Q = 0.03 C/cm. The etching of the silicon compounds on the wire surface with an 80%CF4 + 20%CO2 gas mixture discharge led to full recovery of the operating characteristics of detector and an increase in the lifetime. A scanning electron microscopy and X-ray spectroscopy analysis of the recovered wire surface were performed. In accordance with the results, a good quality of wire cleaning from SiO2 compounds was obtained.

Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined density-functional and scanning tunneling microscopy study.

PubMed

Zhachuk, R; Teys, S; Coutinho, J

2013-06-14

Si(111) and Ge(111) surface formation energies were calculated using density functional theory for various biaxial strain states ranging from -0.04 to 0.04, and for a wide set of experimentally observed surface reconstructions: 3 × 3, 5 × 5, 7 × 7 dimer-adatom-stacking fault reconstructions and c(2 × 8), 2 × 2, and √3×√3 adatoms based surfaces. The calculations are compared with scanning tunneling microscopy data obtained on stepped Si(111) surfaces and on Ge islands grown on a Si(111) substrate. It is shown that the surface structure transformations observed in these strained systems are accounted for by a phase diagram that relates the equilibrium surface structure to the applied strain. The calculated formation energy of the unstrained Si(111)-9 × 9 dimer-adatom-stacking fault surface is reported for the first time and it is higher than corresponding energies of Si(111)-5 × 5 and Si(111)-7 × 7 dimer-adatom-stacking fault surfaces as expected. We predict that the Si(111) surface should adopt a c(2 × 8) reconstruction when tensile strain is above 0.03.

Growth of strained Si/relaxed SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Arimoto, Keisuke; Nakazawa, Hiroki; Mitsui, Shohei; Utsuyama, Naoto; Yamanaka, Junji; Hara, Kosuke O.; Usami, Noritaka; Nakagawa, Kiyokazu

2017-11-01

A strained Si/relaxed SiGe heterostructure grown on Si(110) substrate is attractive as a platform for high-hole-mobility Si-based electronic devices. To improve the electrical property, a smoother surface is desirable. In this study, we investigated surface morphology and microstructural aspects of strained Si/relaxed SiGe/Si(110) heterostructures grown by solid-source (SS) molecular beam epitaxy (MBE). It was revealed that SSMBE provides a way to grow strained Si/relaxed SiGe heterostructures with smooth surfaces. In addition, it was found that the strain in the SiGe layer of the SSMBE-grown sample is highly anisotropic whereas that of the GSMBE-grown sample is almost biaxially relaxed. Along with the surface morphology, the symmetry in degree of strain relaxation has implications for the electrical property. Results of a calculation shows that anisotropic strain is preferable for device application since it confines holes solely in the strained Si layer where hole mobility is enhanced.

Underwater cleaning techniqued used for removal of zebra mussels at the FitzPatrick Nuclear Power Plant

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hobbs, B.; Kahabka, J.

1995-06-01

This paper discusses the use of a mechanical brush cleaning technology recently used to remove biofouling from the Circulating Water (CW) System at New York Power Authority`s James A. FitzPatrick Nuclear Power Plant. The FitzPatrick plant had previously used chemical molluscicide to treat zebra mussels in the CW system. Full system treatment was performed in 1992 with limited forebay/screenwell treatment in 1993. The New York Power Authority (NYPA) decided to conduct a mechanical cleaning of the intake system in 1994. Specific project objectives included: (1) Achieve a level of surface cleaniness greater than 98%; (2) Remove 100% of debris, bothmore » existing sediment and debris generated as a result of cleaning; (3) Inspect all surfaces and components, identifying any problem areas; (4) Complete the task in a time frame within the 1994-95 refueling outage schedule window, and; (5) Determine if underwater mechanical cleaning is a cost-effective zebra mussel control method suitable for future application at FitzPatrick. A pre-cleaning inspection, including underwater video photography, was conducted of each area. Cleaning was accomplished using diver-controlled, multi-brush equipment included the electro-hydraulic powered Submersible Cleaning and Maintenance Platform (SCAMP), and several designs of hand-held machines. The brushes swept all zebra mussels off surfaces, restoring concrete and metal substrates to their original condition. Sensitive areas including pump housings, standpipes, sensor piping and chlorine injection tubing, were cleaned without degradation. Submersible vortex vacuum pumps were used to remove debris from the cavity. More than 46,000 ft{sup 2} of surface area was cleaned and over 460 cubic yards of dewatered debris were removed. As each area was completed, a post-clean inspection with photos and video was performed.« less

Peel-and-Stick: Mechanism Study for Efficient Fabrication of Flexible/Transparent Thin-film Electronics

NASA Astrophysics Data System (ADS)

Lee, Chi Hwan; Kim, Jae-Han; Zou, Chenyu; Cho, In Sun; Weisse, Jeffery M.; Nemeth, William; Wang, Qi; van Duin, Adri C. T.; Kim, Taek-Soo; Zheng, Xiaolin

2013-10-01

Peel-and-stick process, or water-assisted transfer printing (WTP), represents an emerging process for transferring fully fabricated thin-film electronic devices with high yield and fidelity from a SiO2/Si wafer to various non-Si based substrates, including papers, plastics and polymers. This study illustrates that the fundamental working principle of the peel-and-stick process is based on the water-assisted subcritical debonding, for which water reduces the critical adhesion energy of metal-SiO2 interface by 70 ~ 80%, leading to clean and high quality transfer of thin-film electronic devices. Water-assisted subcritical debonding is applicable for a range of metal-SiO2 interfaces, enabling the peel-and-stick process as a general and tunable method for fabricating flexible/transparent thin-film electronic devices.

Peel-and-stick: mechanism study for efficient fabrication of flexible/transparent thin-film electronics.

PubMed

Lee, Chi Hwan; Kim, Jae-Han; Zou, Chenyu; Cho, In Sun; Weisse, Jeffery M; Nemeth, William; Wang, Qi; van Duin, Adri C T; Kim, Taek-Soo; Zheng, Xiaolin

2013-10-10

Peel-and-stick process, or water-assisted transfer printing (WTP), represents an emerging process for transferring fully fabricated thin-film electronic devices with high yield and fidelity from a SiO2/Si wafer to various non-Si based substrates, including papers, plastics and polymers. This study illustrates that the fundamental working principle of the peel-and-stick process is based on the water-assisted subcritical debonding, for which water reduces the critical adhesion energy of metal-SiO2 interface by 70 ~ 80%, leading to clean and high quality transfer of thin-film electronic devices. Water-assisted subcritical debonding is applicable for a range of metal-SiO2 interfaces, enabling the peel-and-stick process as a general and tunable method for fabricating flexible/transparent thin-film electronic devices.

[Cleaning and disinfection of surfaces in hospitals: Data on structure, process and result in the Frankfurt/Main Metropolitan Area].

PubMed

Hausemann, A; Hofmann, H; Otto, U; Heudorf, Ursel

2015-06-01

In addition to hand hygiene and reprocessing of medical products, cleaning and disinfection of surfaces is also an important issue in the prevention of germ transmission and by implication infections. Therefore, in 2014, the quality of the structure, process and result of surface preparation of all hospitals in Frankfurt am Main, Germany, was monitored. All 17 hospitals transferred information on the quality of structure. Process quality was obtained through direct observation during cleaning and disinfection of rooms and their plumbing units. Result quality was gained using the fluorescent method, i.e. marking surfaces with a fluorescent liquid and testing if this mark has been sufficiently removed by cleaning. Structure quality: in all hospitals the employees were trained regularly. In 12 of them, the foremen had the required qualifications, in 6 hospitals unclarity as to the intersection of the cleaning and care services remained. In 14 hospitals only visible contamination was cleaned on the weekends, whereas complete cleaning was reported to take place in 12 hospitals on Saturdays and in 2 hospitals on Sundays. The contractually stipulated cleaning (observations specified in brackets) averaged 178 m(2)/h (148 m(2)/h) per patient room and 69 m(2)/h (33 m(2)/h) for bathrooms. Process quality: during process monitoring, various hand contact surfaces were prepared insufficiently. Result quality: 63 % of fluorescent markings were appropriately removed. The need for improvement is given especially in the area of the qualification of the foremen and a in a clear definition of the intersection between cleaning and care services, as well as in the regulations for weekends and public holidays.

Self-Cleaning Surfaces: A Third-Year Undergraduate Research Project

ERIC Educational Resources Information Center

Haines, Ronald S.; Wu, Alex H. F.; Zhang, Hua; Coffey, Jacob; Huddle, Thomas; Lafountaine, Justin S.; Lim, Zhi-Jun; White, Eugene A.; Tuong, Nam T.; Lamb, Robert N.

2009-01-01

Superhydrophobic (non water-wettable) surfaces can possess the ability to self-clean (the so-called "lotus effect"). The task of devising the apparatus and method for quantifying this self-cleaning effect was offered as a project in a third-year undergraduate laboratory course. Using commonly available equipment the students devised a…

Multifunctional silicon surfaces: reaction of dichlorocarbene generated from Seyferth reagent with hydrogen-terminated silicon (111) surfaces.

PubMed

Liu, Wenjun; Sharp, Ian D; Tilley, T Don

2014-01-14

Insertion of dichlorocarbene (:CCl2), generated by decomposition of the Seyferth reagent PhHgCCl2Br, into the Si-H bond of a tertiary silane to form a Si-CCl2H group is an efficient homogeneous, molecular transformation. A heterogeneous version of this reaction, between PhHgCCl2Br and a silicon (111) surface terminated by tertiary Si-H bonds, was studied using a combination of surface-sensitive infrared and X-ray photoelectron spectroscopies. The insertion of dichlorocarbene into surface Si-H bonds parallels the corresponding reaction of silanes in solution, to produce surface-bound dichloromethyl groups (Si-CCl2H) covering ∼25% of the silicon surface sites. A significant fraction of the remaining Si-H bonds on the surface was converted to Si-Cl/Br groups during the same reaction, with PhHgCCl2Br serving as a halogen atom source. The presence of two distinct environments for the chlorine atoms (Si-CCl2H and Si-Cl) and one type of bromine atom (Si-Br) was confirmed by Cl 2p, Br 3d, and C 1s X-ray photoelectron spectroscopy. The formation of reactive, halogen-terminated atop silicon sites was also verified by reaction with sodium azide or the Grignard reagent (CH3MgBr), to produce Si-N3 or Si-Me functionalities, respectively. Thus, reaction of a hydrogen-terminated silicon (111) surface with PhHgCCl2Br provides a facile route to multifunctional surfaces possessing both stable silicon-carbon and labile silicon-halogen sites, in a single pot synthesis. The reactive silicon-halogen groups can be utilized for subsequent transformations and, potentially, the construction of more complex organic-silicon hybrid systems.

Fabrication of high performance thin-film transistors via pressure-induced nucleation.

PubMed

Kang, Myung-Koo; Kim, Si Joon; Kim, Hyun Jae

2014-10-31

We report a method to improve the performance of polycrystalline Si (poly-Si) thin-film transistors (TFTs) via pressure-induced nucleation (PIN). During the PIN process, spatial variation in the local solidification temperature occurs because of a non-uniform pressure distribution during laser irradiation of the amorphous Si layer, which is capped with an SiO2 layer. This leads to a four-fold increase in the grain size of the poly-Si thin-films formed using the PIN process, compared with those formed using conventional excimer laser annealing. We find that thin films with optimal electrical properties can be achieved with a reduction in the number of laser irradiations from 20 to 6, as well as the preservation of the interface between the poly-Si and the SiO2 gate insulator. This interface preservation becomes possible to remove the cleaning process prior to gate insulator deposition, and we report devices with a field-effect mobility greater than 160 cm(2)/Vs.

Characterization of Silicon Nanocrystal Surfaces by Multidimensional Solid-State NMR Spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hanrahan, Michael P.; Fought, Ellie L.; Windus, Theresa L.

The chemical and photophysical properties of silicon nanocrystals (Si NCs) are strongly dependent on the chemical composition and structure of their surfaces. Here we use fast magic angle spinning (MAS) and proton detection to enable the rapid acquisition of dipolar and scalar 2D 1H– 29Si heteronuclear correlation (HETCOR) solid-state NMR spectra and reveal a molecular picture of hydride-terminated and alkyl-functionalized surfaces of Si NCs produced in a nonthermal plasma. 2D 1H– 29Si HETCOR and dipolar 2D 1H– 1H multiple-quantum correlation spectra illustrate that resonances from surface mono-, di-, and trihydride groups cannot be resolved, contrary to previous literature assignments. Insteadmore » the 2D NMR spectra illustrate that there is large distribution of 1H and 29Si chemical shifts for the surface hydride species in both the as-synthesized and functionalized Si NCs. However, proton-detected 1H– 29Si refocused INEPT experiments can be used to unambiguously differentiate NMR signals from the different surface hydrides. Varying the 29Si evolution time in refocused INEPT experiments and fitting the oscillation of the NMR signals allows for the relative populations of the different surface hydrides to be estimated. This analysis confirms that monohydride species are the predominant surface species on the as-synthesized Si NCs. A reduction in the populations of the di- and trihydrides is observed upon functionalization with alkyl groups, consistent with our previous hypothesis that the trihydride, or silyl (*SiH 3), group is primarily responsible for initiating surface functionalization reactions. Density functional theory (DFT) calculations were used to obtain quantum chemical structural models of the Si NC surface and reproduce the observed 1H and 29Si chemical shifts. Furthermore, the approaches outlined here will be useful to obtain a more detailed picture of surface structures for Si NCs and other hydride-passivated nanomaterials.« less

Characterization of Silicon Nanocrystal Surfaces by Multidimensional Solid-State NMR Spectroscopy

DOE PAGES

Hanrahan, Michael P.; Fought, Ellie L.; Windus, Theresa L.; ...

2017-11-22

The chemical and photophysical properties of silicon nanocrystals (Si NCs) are strongly dependent on the chemical composition and structure of their surfaces. Here we use fast magic angle spinning (MAS) and proton detection to enable the rapid acquisition of dipolar and scalar 2D 1H– 29Si heteronuclear correlation (HETCOR) solid-state NMR spectra and reveal a molecular picture of hydride-terminated and alkyl-functionalized surfaces of Si NCs produced in a nonthermal plasma. 2D 1H– 29Si HETCOR and dipolar 2D 1H– 1H multiple-quantum correlation spectra illustrate that resonances from surface mono-, di-, and trihydride groups cannot be resolved, contrary to previous literature assignments. Insteadmore » the 2D NMR spectra illustrate that there is large distribution of 1H and 29Si chemical shifts for the surface hydride species in both the as-synthesized and functionalized Si NCs. However, proton-detected 1H– 29Si refocused INEPT experiments can be used to unambiguously differentiate NMR signals from the different surface hydrides. Varying the 29Si evolution time in refocused INEPT experiments and fitting the oscillation of the NMR signals allows for the relative populations of the different surface hydrides to be estimated. This analysis confirms that monohydride species are the predominant surface species on the as-synthesized Si NCs. A reduction in the populations of the di- and trihydrides is observed upon functionalization with alkyl groups, consistent with our previous hypothesis that the trihydride, or silyl (*SiH 3), group is primarily responsible for initiating surface functionalization reactions. Density functional theory (DFT) calculations were used to obtain quantum chemical structural models of the Si NC surface and reproduce the observed 1H and 29Si chemical shifts. Furthermore, the approaches outlined here will be useful to obtain a more detailed picture of surface structures for Si NCs and other hydride-passivated nanomaterials.« less

Continuous Droplet Removal upon Dropwise Condensation of Humid Air on a Hydrophobic Micropatterned Surface

PubMed Central

2015-01-01

Combination of two physical phenomena, capillary pressure gradient and wettability gradient, allows a simple two-step fabrication process that yields a reliable hydrophobic self-cleaning condenser surface. The surface is fabricated with specific microscopic topography and further treatment with a chemically inert low-surface-energy material. This process does not require growth of nanofeatures (nanotubes) or hydrophilic–hydrophobic patterning of the surface. Trapezoidal geometry of the microfeatures facilitates droplet transfer from the Wenzel to the Cassie state and reduces droplet critical diameter. The geometry of the micropatterns enhances local coalescence and directional movement for droplets with diameter much smaller than the radial length of the micropatterns. The hydrophobic self-cleaning micropatterned condenser surface prevents liquid film formation and promotes continuous dropwise condensation cycle. Upon dropwise condensation, droplets follow a designed wettability gradient created with micropatterns from the most hydrophobic to the least hydrophobic end of the surface. The surface has higher condensation efficiency, due to its directional self-cleaning property, than a plain hydrophobic surface. We explain the self-actuated droplet collection mechanism on the condenser surface and demonstrate experimentally the creation of an effective wettability gradient over a 6 mm radial distance. In spite of its fabrication simplicity, the fabricated surface demonstrates self-cleaning property, enhanced condensation performance, and reliability over time. Our work enables creation of a hydrophobic condenser surface with the directional self-cleaning property that can be used for collection of biological (chemical, environmental) aerosol samples or for condensation enhancement. PMID:25073014

Continuous droplet removal upon dropwise condensation of humid air on a hydrophobic micropatterned surface.

PubMed

Zamuruyev, Konstantin O; Bardaweel, Hamzeh K; Carron, Christopher J; Kenyon, Nicholas J; Brand, Oliver; Delplanque, Jean-Pierre; Davis, Cristina E

2014-08-26

Combination of two physical phenomena, capillary pressure gradient and wettability gradient, allows a simple two-step fabrication process that yields a reliable hydrophobic self-cleaning condenser surface. The surface is fabricated with specific microscopic topography and further treatment with a chemically inert low-surface-energy material. This process does not require growth of nanofeatures (nanotubes) or hydrophilic-hydrophobic patterning of the surface. Trapezoidal geometry of the microfeatures facilitates droplet transfer from the Wenzel to the Cassie state and reduces droplet critical diameter. The geometry of the micropatterns enhances local coalescence and directional movement for droplets with diameter much smaller than the radial length of the micropatterns. The hydrophobic self-cleaning micropatterned condenser surface prevents liquid film formation and promotes continuous dropwise condensation cycle. Upon dropwise condensation, droplets follow a designed wettability gradient created with micropatterns from the most hydrophobic to the least hydrophobic end of the surface. The surface has higher condensation efficiency, due to its directional self-cleaning property, than a plain hydrophobic surface. We explain the self-actuated droplet collection mechanism on the condenser surface and demonstrate experimentally the creation of an effective wettability gradient over a 6 mm radial distance. In spite of its fabrication simplicity, the fabricated surface demonstrates self-cleaning property, enhanced condensation performance, and reliability over time. Our work enables creation of a hydrophobic condenser surface with the directional self-cleaning property that can be used for collection of biological (chemical, environmental) aerosol samples or for condensation enhancement.

Positron annihilation on the surfaces of SiO 2 films thermally grown on single crystal of Cz-Si

NASA Astrophysics Data System (ADS)

Deng, Wen; Yue, Li; Zhang, Wei; Cheng, Xu-xin; Zhu, Yan-yan; Huang, Yu-yang

2009-09-01

Two-detector coincidence system and mono-energetic slow positron beam has been applied to measure the Doppler broadening spectra for single crystals of SiO2, SiO2 films with different thickness thermally grown on single crystal of Cz-Si, and single crystal of Si without oxide film. Oxygen is recognized as a peak at about 11.85 × 10-3m0c on the ratio curves. The S parameters decrease with the increase of positron implantation energy for the single crystal of SiO2 and Si without oxide film. However, for the thermally grown SiO2-Si sample, the S parameters in near surface of the sample increase with positron implantation energy. It is due to the formation of silicon oxide at the surface, which lead to lower S value. S and W parameters vary with positron implantation depth indicate that the SiO2-Si system consist of a surface layer, a SiO2 layer, a SiO2-Si interface layer and a semi-infinite Si substrate.

Silica hydride intermediate for octadecylsilica and phenyl bonded phase preparation via heterogeneous hydrosilation in supercritical carbon dioxide.

PubMed

Scully, N M; Ashu-Arrah, B A; Nagle, A P; Omamogho, J O; O'Sullivan, G P; Friebolin, V; Dietrich, B; Albert, K; Glennon, J D

2011-04-15

Investigations into the preparation of silica hydride intermediate in supercritical carbon dioxide (sc-CO(2)) that avoids the use of organic solvents such as toluene or dioxane are described. The effects of reaction temperature, pressure and time on the surface coverage of the supercritical fluid generated silica hydride intermediate were studied. Under optimised supercritical conditions of 120°C, 483 bar and 3 h reaction time, silica hydride (Si-H) conversion efficiencies of ca. 40% were achieved for the hydride intermediate prepared from a monofunctional silane reagent (dimethylmethoxysilane). Si-H conversion efficiencies (as determined from (29)Si CP-MAS NMR spectral analysis) for the hydride intermediate prepared from triethoxysilane (TES) in sc-CO(2) were found to be comparable to those obtained using a TES silanisation approach in an organic solvent. (13)C and (29)Si CP-MAS-NMR spectroscopy was employed to provide a complete structural assignment of the silica hydride intermediates. Furthermore, supercritical CO(2) was subsequently employed as a reaction medium for the heterogenous hydrosilation of silica hydride with octadecene and with styrene, in the presence of a free radical initiator. These supercritical fluid generated reversed-phase materials were prepared in a substantially reduced reaction time (3 h) compared to organic solvent based methods (100 h reaction time). Silica functionalisation in sc-CO(2) presents an efficient and clean alternative to organic solvent based methods for the preparation of important silica hydride intermediate and silica bonded stationary phases via a hydrosilation approach. Copyright © 2010 Elsevier B.V. All rights reserved.

Real time dynamics of Si magic clusters mediating phase transformation: Si(111)-(1 × 1) to (7 × 7) reconstruction revisited

NASA Astrophysics Data System (ADS)

Ong, Wei Jie; Tok, Eng Soon

2012-07-01

Using Scanning Tunneling Microscope (STM), we show that the surface undergoes phase transformation from disordered "1 × 1" to (7 × 7) reconstruction which is mediated by the formation of Si magic clusters. Mono-disperse Si magic clusters of size ~ 13.5 ± 0.5 Å can be formed by heating the Si(111) surface to 1200 °C and quenching it to room temperature at cooling rates of at least 100 °C/min. The structure consists of 3 tetra-clusters of size ~ 4.5 Ǻ similar to the Si magic clusters that were formed from Si adatoms deposited by Si solid source on Si(111)-(7 × 7) [1]. Using real time STM scanning to probe the surface at ~ 400 °C, we show that Si magic clusters pop up from the (1 × 1) surface and form spontaneously during the phase transformation. This is attributed to the difference in atomic density between "disordered 1 × 1" and (7 × 7) surface structures which lead to the release of excess Si atoms onto the surface as magic clusters.

Phase Analysis of Laser Direct Etching and Water Assisted Laser Combined Etching of SiC Ceramics

NASA Astrophysics Data System (ADS)

Yuan, Genfu; Cong, Qidong; Zhang, Chen; Xie, Bingbing

2017-12-01

In this study, to discover the etching mechanism of SiC ceramics under laser direct etching and water-jet assisted laser combined etching, the phenomena of substance change on the etched surface were investigated. Also, the rules of substance transfer in etching are discussed. The elemental content change and the phase change of the etching products on the etched surface were analyzed by energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD), respectively. These studies showed a high amount of carbon black on the etched surface, because of the decomposition of SiC ceramics under the high-power-density laser irradiation. SiC decomposed to Si under the laser irradiation, and the subsequent chemical reaction of Si and O2 easily produced SiO2. The SiO2 on the etched surface melted and vaporized, whereas most of SiO2 was removed through splashing, changing the chemical composition of the etched surface. Following the water jet introduction, an increased amount of O existed on the combined etching surface, because the chemical reaction of SiC and H2O easily produced SiO2 under the high-power-density laser irradiation.

Mechanically durable superoleophobic aluminum surfaces with microstep and nanoreticula hierarchical structure for self-cleaning and anti-smudge properties.

PubMed

Peng, Shan; Bhushan, Bharat

2016-01-01

Superoleophobic aluminum surfaces are of interest for self-cleaning, anti-smudge (fingerprint resistance), anti-fouling, and corrosion resistance applications. In the published literature on superoleophobic aluminum surfaces, mechanical durability, self-cleaning, and anti-smudge properties data are lacking. Microstep structure has often been used to prepare superhydrophobic aluminum surfaces which produce the microstructure. The nanoreticula structure has also been used, and is reported to be able to trap air-pockets, which are desirable for a high contact angle. In this work, the microstep and nanoreticula structures were produced on aluminum surfaces to form a hierarchical micro/nanostructure by a simple two-step chemical etching process. The hierarchical structure, when modified with fluorosilane, made the surface superoleophobic. The effect of nanostructure, microstructure, and hierarchical structure on wettability and durability were studied and compared. The superoleophobic aluminum surfaces were found to be wear resistant, self-cleaning, and have anti-smudge and corrosion resistance properties. Copyright © 2015 Elsevier Inc. All rights reserved.

Insight into proton transfer in phosphotungstic acid functionalized mesoporous silica-based proton exchange membrane fuel cells.

PubMed

Zhou, Yuhua; Yang, Jing; Su, Haibin; Zeng, Jie; Jiang, San Ping; Goddard, William A

2014-04-02

We have developed for fuel cells a novel proton exchange membrane (PEM) using inorganic phosphotungstic acid (HPW) as proton carrier and mesoporous silica as matrix (HPW-meso-silica) . The proton conductivity measured by electrochemical impedance spectroscopy is 0.11 S cm(-1) at 90 °C and 100% relative humidity (RH) with a low activation energy of ∼14 kJ mol(-1). In order to determine the energetics associated with proton migration within the HPW-meso-silica PEM and to determine the mechanism of proton hopping, we report density functional theory (DFT) calculations using the generalized gradient approximation (GGA). These DFT calculations revealed that the proton transfer process involves both intramolecular and intermolecular proton transfer pathways. When the adjacent HPWs are close (less than 17.0 Å apart), the calculated activation energy for intramolecular proton transfer within a HPW molecule is higher (29.1-18.8 kJ/mol) than the barrier for intermolecular proton transfer along the hydrogen bond. We find that the overall barrier for proton movement within the HPW-meso-silica membranes is determined by the intramolecular proton transfer pathway, which explains why the proton conductivity remains unchanged when the weight percentage of HPW on meso-silica is above 67 wt %. In contrast, the activation energy of proton transfer on a clean SiO2 (111) surface is computed to be as high as ∼40 kJ mol(-1), confirming the very low proton conductivity on clean silica surfaces observed experimentally.

Study of Surface Cleaning Methods and Pyrolysis Temperature on Nano-Structured Carbon Films using X-ray Photoelectron Spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kerber, Pranita B.; Porter, Lisa M.; McCullough, L. A.

2012-10-12

Nanostructured carbon (ns-C) films fabricated by stabilization and pyrolysis of di-block copolymers are of interest for a variety of electrical/electronic applications due to their chemical inertness, high-temperature insensitivity, very high surface area, and tunable electrical resistivity over a wide range [Kulkarni et al., Synth. Met. 159, (2009) 177]. Because of their high porosity and associated high specific surface area, controlled surface cleaning studies are important for fabricating electronic devices from these films. In this study, quantification of surface composition and surface cleaning studies on ns-C films synthesized by carbonization of di-block copolymers of polyacrylonitrile-b-poly(n-butyl acrylate) (PAN-b-PBA) at two different temperaturesmore » were carried out. X-ray photoelectron spectroscopy was used for elemental analysis and to determine the efficacy of various surface cleaning methods for ns-C films and to examine the polymer residues in the films. The in-situ surface cleaning methods included: HF vapor treatment, vacuum annealing, and exposure to UV-ozone. Quantitative analysis of high-resolution XPS scans showed 11 at. % of nitrogen present in the films pyrolyzed at 600 °C, suggesting incomplete denitrogenation of the copolymer films. The nitrogen atomic concentration reduced significantly for films pyrolyzed at 900 °C confirming extensive denitrogenation at that temperature. Furthermore, quantitative analysis of nitrogen sub-peaks indicated higher loss of nitrogen atoms residing at the edge of graphitic clusters relative to that of nitrogen atoms within the graphitic cluster, suggesting higher graphitization with increasing pyrolysis temperature. Of the surface cleaning methods investigated, in-situ annealing of the films at 300 °C for 40 min was found to be the most efficacious in removing adventitious carbon and oxygen impurities from the surface.« less

Study of surface cleaning methods and pyrolysis temperatures on nanostructured carbon films using x-ray photoelectron spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kerber, Pranita; Porter, Lisa M.; McCullough, Lynne A.

2012-11-15

Nanostructured carbon (ns-C) films fabricated by stabilization and pyrolysis of diblock copolymers are of interest for a variety of electrical/electronic applications due to their chemical inertness, high-temperature insensitivity, very high surface area, and tunable electrical resistivity over a wide range [Kulkarni et al., Synth. Met. 159, 177 (2009)]. Because of their high porosity and associated high specific surface area, controlled surface cleaning studies are important for fabricating electronic devices from these films. In this study, quantification of surface composition and surface cleaning studies on ns-C films synthesized by carbonization of diblock copolymers of polyacrylonitrile-b-poly(n-butyl acrylate) at two different temperatures weremore » carried out. X-ray photoelectron spectroscopy was used for elemental analysis and to determine the efficacy of various surface cleaning methods for ns-C films and to examine the polymer residues in the films. The in-situ surface cleaning methods included HF vapor treatment, vacuum annealing, and exposure to UV-ozone. Quantitative analysis of high-resolution XPS scans showed 11 at. % nitrogen was present in the films pyrolyzed at 600 Degree-Sign C, suggesting incomplete denitrogenation of the copolymer films. The nitrogen atomic concentration decreased significantly for films pyrolyzed at 900 Degree-Sign C confirming extensive denitrogenation at that temperature. Furthermore, quantitative analysis of nitrogen subpeaks indicated higher loss of nitrogen atoms residing at the edge of graphitic clusters relative to that of nitrogen atoms within the graphitic clusters, suggesting higher graphitization with increasing pyrolysis temperature. Of the surface cleaning methods investigated, in-situ annealing of the films at 300 Degree-Sign C for 40 min was found to be the most efficacious in removing adventitious carbon and oxygen impurities from the surface.« less

Controlled surface chemistry of diamond/β-SiC composite films for preferential protein adsorption.

PubMed

Wang, Tao; Handschuh-Wang, Stephan; Yang, Yang; Zhuang, Hao; Schlemper, Christoph; Wesner, Daniel; Schönherr, Holger; Zhang, Wenjun; Jiang, Xin

2014-02-04

Diamond and SiC both process extraordinary biocompatible, electronic, and chemical properties. A combination of diamond and SiC may lead to highly stable materials, e.g., for implants or biosensors with excellent sensing properties. Here we report on the controllable surface chemistry of diamond/β-SiC composite films and its effect on protein adsorption. For systematic and high-throughput investigations, novel diamond/β-SiC composite films with gradient composition have been synthesized using the hot filament chemical vapor deposition (HFCVD) technique. As revealed by scanning electron microscopy (SEM), the diamond/β-SiC ratio of the composite films shows a continuous change from pure diamond to β-SiC over a length of ∼ 10 mm on the surface. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) was employed to unveil the surface termination of chemically oxidized and hydrogen treated surfaces. The surface chemistry of the composite films was found to depend on diamond/β-SiC ratio and the surface treatment. As observed by confocal fluorescence microscopy, albumin and fibrinogen were preferentially adsorbed from buffer: after surface oxidation, the proteins preferred to adsorb on diamond rather than on β-SiC, resulting in an increasing amount of proteins adsorbed to the gradient surfaces with increasing diamond/β-SiC ratio. By contrast, for hydrogen-treated surfaces, the proteins preferentially adsorbed on β-SiC, leading to a decreasing amount of albumin adsorbed on the gradient surfaces with increasing diamond/β-SiC ratio. The mechanism of preferential protein adsorption is discussed by considering the hydrogen bonding of the water self-association network to OH-terminated surfaces and the change of the polar surface energy component, which was determined according to the van Oss method. These results suggest that the diamond/β-SiC gradient film can be a promising material for biomedical applications which require good biocompatibility and selective adsorption of proteins and cells to direct cell migration.

Surface structure analysis of BaSi2(100) epitaxial film grown on Si(111) using CAICISS

NASA Astrophysics Data System (ADS)

Okasaka, Shouta; Kubo, Osamu; Tamba, Daiki; Ohashi, Tomohiro; Tabata, Hiroshi; Katayama, Mitsuhiro

2015-05-01

Geometry and surface structure of a BaSi2(100) film on Si(111) formed by reactive deposition epitaxy (RDE) have been investigated using coaxial impact-collision ion scattering spectroscopy and atomic force microscopy. BaSi2(100) film can be grown only when the Ba deposition rate is sufficiently fast. It is revealed that a BaSi2(100) film grown at 600 °C has better crystallinity than a film grown at 750 °C owing to the mixture of planes other than (100) in the RDE process at higher temperatures. The azimuth angle dependence of the scattering intensity from Ba shows sixfold symmetry, indicating that the minimum height of surface steps on BaSi2(100) is half of the length of unit cell. By comparing the simulated azimuth angle dependences for more than ten surface models with experimental one, it is strongly indicated that the surface of a BaSi2(100) film grown on Si(111) is terminated by Si tetrahedra.

Walnut Hulls Clean Aluminum

NASA Technical Reports Server (NTRS)

Colberg, W. R.; Gordon, G. H.; Jackson, C. H.

1984-01-01

Hulls inflict minimal substrate damage. Walnut hulls found to be best abrasive for cleaning aluminum surfaces prior to painting. Samples blasted with walnut hulls showed no compressive stress of surface.

A Techno-Economic Look at SiC WBG from Wafer to Motor Drive

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bench Reese, Samantha R; Horowitz, Kelsey A; Remo, Timothy W

Techno-economic analysis helps benchmark and deliver supply chain and manufacturing insights that can be leveraged by decision-makers to inform investment strategies, policy, and other decisions to promote economic growth and competitiveness. Silicon Carbide (SiC) wide-band gap (WBG) technologies is poised to be an integral contributor to the clean energy economy. We use bottoms-up regional manufacturing cost models to show SiC power electronics, manufactured in volume, could result in final product cost parity with those manufactured with silicon. The models are further leveraged to show innovation pathways to lower cost and potentially expanded technology adoption.

Using Ozone To Clean and Passivate Oxygen-Handling Hardware

NASA Technical Reports Server (NTRS)

Torrance, Paul; Biesinger, Paul

2009-01-01

A proposed method of cleaning, passivating, and verifying the cleanliness of oxygen-handling hardware would extend the established art of cleaning by use of ozone. As used here, "cleaning" signifies ridding all exposed surfaces of combustible (in particular, carbon-based) contaminants. The method calls for exposing the surfaces of the hardware to ozone while monitoring the ozone effluent for carbon dioxide. The ozone would passivate the hardware while oxidizing carbon-based residues, converting the carbon in them to carbon dioxide. The exposure to ozone would be continued until no more carbon dioxide was detected, signifying that cleaning and passivation were complete.

Megasonic cleaning strategy for sub-10nm photomasks

NASA Astrophysics Data System (ADS)

Hsu, Jyh-Wei; Samayoa, Martin; Dress, Peter; Dietze, Uwe; Ma, Ai-Jay; Lin, Chia-Shih; Lai, Rick; Chang, Peter; Tuo, Laurent

2016-10-01

One of the main challenges in photomask cleaning is balancing particle removal efficiency (PRE) with pattern damage control. To overcome this challenge, a high frequency megasonic cleaning strategy is implemented. Apart from megasonic frequency and power, photomask surface conditioning also influences cleaning performance. With improved wettability, cleanliness is enhanced while pattern damage risk is simultaneously reduced. Therefore, a particle removal process based on higher megasonic frequencies, combined with proper surface pre-treatment, provides improved cleanliness without the unintended side effects of pattern damage, thus supporting the extension of megasonic cleaning technology into 10nm half pitch (hp) device node and beyond.

A study on air bubble wetting: Role of surface wettability, surface tension, and ionic surfactants

NASA Astrophysics Data System (ADS)

George, Jijo Easo; Chidangil, Santhosh; George, Sajan D.

2017-07-01

Fabrication of hydrophobic/hydrophilic surfaces by biomimicking nature has attracted significant attention recently due to their potential usage in technologies, ranging from self-cleaning to DNA condensation. Despite the potential applications, compared to surfaces of tailored wettability, less attention has been paid towards development and understanding of air bubble adhesion and its dynamics on surfaces with varying wettability. In this manuscript, following the commonly used approach of oxygen plasma treatment, polydimethylsiloxane surfaces with tunable wettability are prepared. The role of plasma treatment conditions on the surface hydrophilicity and the consequent effect on adhesion dynamics of an underwater air bubble is explored for the first time. The ATR-FTIR spectroscopic analysis reveals that the change in hydrophilicity arises from the chemical modification of the surface, manifested as Si-OH vibrations in the spectra. The thickness of the formed thin liquid film at the surface responsible for the experimentally observed air bubble repellency is estimated from the augmented Young-Laplace equation. The concentration dependent studies using cationic as well as anionic surfactant elucidate that the reduced surface tension of the aqueous solution results in a stable thicker film and causes non-adherence of air bubble to the aerophilic surface. Furthermore, the study carried out to understand the combined effect of plasma treatment and surfactants reveals that even below critical micelle concentration, a negatively charged surface results in air bubble repellency for the anionic surfactant, whereas only enhanced air bubble contact angle is observed for the cationic surfactant.

Tolerance of Salmonella Enteritidis and Staphylococcus aureus to surface cleaning and household bleach.

PubMed

Kusumaningrum, H D; Paltinaite, R; Koomen, A J; Hazeleger, W C; Rombouts, F M; Beumer, R R

2003-12-01

Effective cleaning and sanitizing of food preparation sites is important because pathogens are readily spread to food contact surfaces after preparation of contaminated raw products. Tolerance of Salmonella Enteritidis and Staphylococcus aureus to surface cleaning by wiping with regular, microfiber, and antibacterial-treated cloths was investigated. Wiping with cleaning cloths resulted in a considerable reduction of microorganisms from surfaces, despite the greater difficulty in removing S. aureus than Salmonella Enteritidis. Depending on the cloth type, S. aureus were reduced on surfaces from initial numbers of approximately 10(5) CFU/100 cm2 to numbers from less than 4 CFU/100 cm2 (below the detection limit) to 100 CFU/100 cm2. Directly after the cloths were used to clean the contaminated surfaces, they contained high numbers of bacteria (10(4) to 10(5) CFU/100 cm2), except for the disposable antibacterial-treated cloths, in which no bacteria could be detected. The tolerance of these pathogens to sodium hypochlorite was studied in the suspension test and in cloths. S. aureus showed a better tolerance for sodium hypochlorite than Salmonella Enteritidis. Inactivation of microorganisms in cloths required a higher concentration of sodium hypochlorite than was needed in the suspension test. Repeated exposure to sodium hypochlorite, however, resulted in an increase in susceptibility to this compound. This study provides essential information about the transfer of bacteria when wiping surfaces and highlights the need for a hygiene procedure with cleaning cloths that sufficiently avoids cross-contamination in the household environment.

Bubbles versus biofilms: a novel method for the removal of marine biofilms attached on antifouling coatings using an ultrasonically activated water stream

NASA Astrophysics Data System (ADS)

Salta, M.; Goodes, L. R.; Maas, B. J.; Dennington, S. P.; Secker, T. J.; Leighton, T. G.

2016-09-01

The accumulation of marine organisms on a range of manmade surfaces, termed biofouling, has proven to be the Achilles’ heel of the shipping industry. Current antifouling coatings, such as foul release coatings (FRCs), only partially inhibit biofouling, since biofilms remain a major issue. Mechanical ship hull cleaning is commonly employed to remove biofilms, but these methods tend to damage the antifouling coating and often do not result in full removal. Here, we report the effectiveness of biofilm removal from FRCs through a novel cleaning device that uses an ultrasonically activated stream (UAS). In this device, ultrasound enhances the cleaning properties of microbubbles in a freely flowing stream of water. The UAS was applied on two types of commercial FRCs which were covered with biofilm growth following twelve days immersion in the marine environment. Biofilm removal was quantified in terms of reduction in biovolume and surface roughness, both measured using an optical profilometer, which were then compared with similar measurements after cleaning with a non-ultrasonically activated water stream. It was found that the UAS significantly improves the cleaning capabilities of a water flow, up to the point where no detectable biofilm remained on the coating surfaces. Overall biofilm surface coverage was significantly lower on the FRC coatings cleaned with the UAS system when compared to the coatings cleaned with water or not cleaned at all. When biofilm biomass removal was investigated, the UAS system resulted in significantly lower biovolume values even when compared to the water cleaning treatment with biovolume values close to zero. Remarkably, the surface roughness of the coatings after cleaning with the UAS was found to be comparable to that of the blank, non-immersed coatings, illustrating that the UAS did not damage the coatings in the process. The data supporting this study are openly available from the University of Southampton repository at http://dx.doi.org/10.5258/SOTON/399420.

Plasma discharge self-cleaning filtration system

DOEpatents

Cho, Young I.; Fridman, Alexander; Gutsol, Alexander F.; Yang, Yong

2014-07-22

The present invention is directed to a novel method for cleaning a filter surface using a plasma discharge self-cleaning filtration system. The method involves utilizing plasma discharges to induce short electric pulses of nanoseconds duration at high voltages. These electrical pulses generate strong Shockwaves that disintegrate and dislodge particulate matter located on the surface of the filter.

A numerical study on high-pressure water-spray cleaning for CSP reflectors

NASA Astrophysics Data System (ADS)

Anglani, Francesco; Barry, John; Dekkers, Willem

2016-05-01

Mirror cleaning for concentrated solar thermal (CST) systems is an important aspect of operation and maintenance (O&M), which affects solar field efficiency. The cleaning process involves soil removal by erosion, resulting from droplet impingement on the surface. Several studies have been conducted on dust accumulation and CSP plant reflectivity restoration, demonstrating that parameters such as nozzle diameter, jet impingement angle, interaxial distance between nozzles, standoff distance, water velocity, nozzle pressure and others factors influence the extent of reflectance restoration. In this paper we aim at identifying optimized cleaning strategies suitable for CST plants, able to restore mirror reflectance by high-pressure water-spray systems through the enhancement of shear stress over reflectors' surface. In order to evaluate the forces generated by water-spray jet impingement during the cleaning process, fluid dynamics simulations have been undertaken with ANSYS CFX software. In this analysis, shear forces represent the "critical phenomena" within the soil removal process. Enhancing shear forces on a particular area of the target surface, varying the angle of impingement in combination with the variation of standoff distances, and managing the interaxial distance of nozzles can increase cleaning efficiency. This procedure intends to improve the cleaning operation for CST mirrors reducing spotted surface and increasing particles removal efficiency. However, turbulence developed by adjacent flows decrease the shear stress generated on the reflectors surface. The presence of turbulence is identified by the formation of "fountain regions" which are mostly responsible of cleaning inefficiency. By numerical analysis using ANSYS CFX, we have modelled a stationary water-spray system with an array of three nozzles in line, with two angles of impingement: θ = 90° and θ = 75°. Several numerical tests have been carried out, varying the interaxial distance of nozzles, standoff distance, jet pressure and jet impingement angle in order to identify effective and efficient cleaning procedures to restore collectors' reflectance, decrease turbulence and improve CST plant efficiency. Results show that the forces generated over the flat target surface are proportional to the inlet pressure and to the water velocity over the surface, and that the shear stresses decrease as the standoff distance increases.

Direct conversion of hydride- to siloxane-terminated silicon quantum dots

DOE PAGES

Anderson, Ryan T.; Zang, Xiaoning; Fernando, Roshan; ...

2016-10-20

Here, peripheral surface functionalization of hydride-terminated silicon quantum dots (SiQD) is necessary in order to minimize their oxidation/aggregation and allow for solution processability. Historically thermal hydrosilylation addition of alkenes and alkynes across the Si-H surface to form Si-C bonds has been the primary method to achieve this. Here we demonstrate a mild alternative approach to functionalize hydride-terminated SiQDs using bulky silanols in the presence of free-radical initiators to form stable siloxane (~Si-O-SiR 3) surfaces with hydrogen gas as a byproduct. This offers an alternative to existing methods of forming siloxane surfaces that require corrosive Si-Cl based chemistry with HCl byproducts.more » A 52 nm blue shift in the photoluminescent spectra of siloxane versus alkyl-functionalized SiQDs is observed that we explain using computational theory. Model compound synthesis of silane and silsesquioxane analogues is used to optimize surface chemistry and elucidate reaction mechanisms. Thorough characterization on the extent of siloxane surface coverage is provided using FTIR and XPS. As a result, TEM is used to demonstrate SiQD size and integrity after surface chemistry and product isolation.« less

The microstructure of the surface layer of magnesium laser alloyed with aluminum and silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dziadoń, Andrzej

2016-08-15

The surface layer under analysis was formed as a result of diffusion bonding of a thin AlSi20 plate to a magnesium substrate followed by laser melting. Depending on the process parameters, the laser beam melted the AlSi20 plate only or the AlSi20 plate and a layer of the magnesium surface adjacent to it. Two types of microstructure of the remelted layer were thus analyzed. If the melting zone was limited to the AlSi20 plate, the microstructure of the surface layer was typical of a rapidly solidified hypereutectic Al–Si alloy. Since, however, the liquid AlSi20 reacted with the magnesium substrate, themore » following intermetallic phases formed: Al{sub 3}Mg{sub 2}, Mg{sub 17}Al{sub 12} and Mg{sub 2}Si. The microstructure of the modified surface layer of magnesium was examined using optical, scanning electron and transmission electron microscopy. The analysis of the surface properties of the laser modified magnesium revealed that the thin layer has a microstructure of a rapidly solidified Al–Si alloy offering good protection against corrosion. By contrast, the surface layer containing particles of intermetallic phases was more resistant to abrasion but had lower corrosion resistance than the silumin type layer. - Highlights: •A CO{sub 2} laser was used for surface alloying of Mg with AlSi20. •Before alloying, an AlSi20 plate was diffusion bonded with the Mg substrate. •The process parameters affected the alloyed layer microstructure and properties. •With melting limited to AlSi20, the layer had a structure of rapidly solidified AlSi20. •Mg–Al and Mg–Si phases were present when both the substrate and the plate were melted.« less

Tuning Confinement in Colloidal Silicon Nanocrystals with Saturated Surface Ligands.

PubMed

Carroll, Gerard M; Limpens, Rens; Neale, Nathan R

2018-05-09

The optical properties of silicon nanocrystals (Si NCs) are a subject of intense study and continued debate. In particular, Si NC photoluminescence (PL) properties are known to depend strongly on the surface chemistry, resulting in electron-hole recombination pathways derived from the Si NC band-edge, surface-state defects, or combined NC-conjugated ligand hybrid states. In this Letter, we perform a comparison of three different saturated surface functional groups-alkyls, amides, and alkoxides-on nonthermal plasma-synthesized Si NCs. We find a systematic and size-dependent high-energy (blue) shift in the PL spectrum of Si NCs with amide and alkoxy functionalization relative to alkyl. Time-resolved photoluminescence and transient absorption spectroscopies reveal no change in the excited-state dynamics between Si NCs functionalized with alkyl, amide, or alkoxide ligands, showing for the first time that saturated ligands-not only surface-derived charge-transfer states or hybridization between NC and low-lying ligand orbitals-are responsible for tuning the Si NC optical properties. To explain these PL shifts we propose that the atom bound to the Si NC surface strongly interacts with the Si NC electronic wave function and modulates the Si NC quantum confinement. These results reveal a potentially broadly applicable correlation between the optoelectronic properties of Si NCs and related quantum-confined structures based on the interaction between NC surfaces and the ligand binding group.

Tuning Confinement in Colloidal Silicon Nanocrystals with Saturated Surface Ligands

DOE PAGES

Carroll, Gerard M.; Limpens, Rens; Neale, Nathan R.

2018-04-16

The optical properties of silicon nanocrystals (Si NCs) are a subject of intense study and continued debate. In particular, Si NC photoluminescence (PL) properties are known to depend strongly on the surface chemistry, resulting in electron-hole recombination pathways derived from the Si NC band-edge, surface-state defects, or combined NC-conjugated ligand hybrid states. In this Letter, we perform a comparison of three different saturated surface functional groups - alkyls, amides, and alkoxides - on nonthermal plasma-synthesized Si NCs. We find a systematic and size-dependent high-energy (blue) shift in the PL spectrum of Si NCs with amide and alkoxy functionalization relative tomore » alkyl. Time-resolved photoluminescence and transient absorption spectroscopies reveal no change in the excited-state dynamics between Si NCs functionalized with alkyl, amide, or alkoxide ligands, showing for the first time that saturated ligands - not only surface-derived charge-transfer states or hybridization between NC and low-lying ligand orbitals - are responsible for tuning the Si NC optical properties. To explain these PL shifts we propose that the atom bound to the Si NC surface strongly interacts with the Si NC electronic wave function and modulates the Si NC quantum confinement. Furthermore, these results reveal a potentially broadly applicable correlation between the optoelectronic properties of Si NCs and related quantum-confined structures based on the interaction between NC surfaces and the ligand binding group.« less

Rice- and butterfly-wing effect inspired self-cleaning and low drag micro/nanopatterned surfaces in water, oil, and air flow.

PubMed

Bixler, Gregory D; Bhushan, Bharat

2014-01-07

In search of new solutions to complex challenges, researchers are turning to living nature for inspiration. For example, special surface characteristics of rice leaves and butterfly wings combine the shark skin (anisotropic flow leading to low drag) and lotus leaf (superhydrophobic and self-cleaning) effects, producing the so-called rice and butterfly wing effect. In this paper, we study four microstructured surfaces inspired by rice leaves and fabricated with photolithography techniques. We also present a method of creating such surfaces using a hot embossing procedure for scaled-up manufacturing. Fluid drag, self-cleaning, contact angle, and contact angle hysteresis data are presented to understand the role of sample geometrical dimensions. Conceptual modeling provides design guidance when developing novel low drag, self-cleaning, and potentially antifouling surfaces for medical, marine, and industrial applications.

Nonhazardous solvent composition and method for cleaning metal surfaces

DOEpatents

Googin, John M.; Simandl, Ronald F.; Thompson, Lisa M.

1993-01-01

A solvent composition for displacing greasy and oily contaminants as well as water and/or aqueous residue from metallic surfaces, especially surfaces of radioactive materials so that such surfaces can be wiped clean of the displaced contaminants, water and/or aqueous residue. The solvent composition consists essentially of a blend of nonpolar aliphatic hydrocarbon solvent having a minimum flash point of about 140.degree. F. and 2 to 25 volume percent of a polar solvent having a flash point sufficiently high so as to provide the solvent composition with a minimum flash point of at least 140.degree. F. The solvent composition is nonhazardous so that when it is used to clean the surfaces of radioactive materials the waste in the form of paper or cloth wipes, lab coats and the like used in the cleaning operation is not considered to be mixed waste composed of a hazardous solvent and a radioactive material.

Nonhazardous solvent composition and method for cleaning metal surfaces

DOEpatents

Googin, J.M.; Simandl, R.F.; Thompson, L.M.

1993-05-04

A solvent composition for displacing greasy and oily contaminants as well as water and/or aqueous residue from metallic surfaces, especially surfaces of radioactive materials so that such surfaces can be wiped clean of the displaced contaminants, water and/or aqueous residue. The solvent composition consists essentially of a blend of nonpolar aliphatic hydrocarbon solvent having a minimum flash point of about 140 F and 2 to 25 volume percent of a polar solvent having a flash point sufficiently high so as to provide the solvent composition with a minimum flash point of at least 140 F. The solvent composition is nonhazardous so that when it is used to clean the surfaces of radioactive materials the waste in the form of paper or cloth wipes, lab coats and the like used in the cleaning operation is not considered to be mixed waste composed of a hazardous solvent and a radioactive material.

Exoelectron emission from a clean, annealed magnesium single crystal during oxygen adsorption

NASA Technical Reports Server (NTRS)

Ferrante, J.

1976-01-01

Exoelectron emission was observed from a clean, annealed Mg (0001) surface during oxygen and chlorine adsorption at pressures of 6.5x10 0.00001- N/sq m and lower. the studies were performed in an ultrahigh vacuum system. The crystals were cleaned by argon ion bombardment and annealed at 300 C. Auger electron spectroscopy was used to verify surface cleanliness, and low energy electron diffraction was used to verify that the surface was annealed. The emission was found to be oxygen arrival rate dependent. Two peaks were observed in the electron emission with exposure. Evidence is presented that the formation of the second peak corresponds to oxidation of the Mg surface. No emission was observed from clean aluminum during adsorption. Results verify that electron emission occurs from a strain free surface simply upon adsorption of oxygen. A qualitative explanation for the mechanisms of emission in terms of chemical effects is presented.

Rice- and butterfly-wing effect inspired self-cleaning and low drag micro/nanopatterned surfaces in water, oil, and air flow

NASA Astrophysics Data System (ADS)

Bixler, Gregory D.; Bhushan, Bharat

2013-12-01

In search of new solutions to complex challenges, researchers are turning to living nature for inspiration. For example, special surface characteristics of rice leaves and butterfly wings combine the shark skin (anisotropic flow leading to low drag) and lotus leaf (superhydrophobic and self-cleaning) effects, producing the so-called rice and butterfly wing effect. In this paper, we study four microstructured surfaces inspired by rice leaves and fabricated with photolithography techniques. We also present a method of creating such surfaces using a hot embossing procedure for scaled-up manufacturing. Fluid drag, self-cleaning, contact angle, and contact angle hysteresis data are presented to understand the role of sample geometrical dimensions. Conceptual modeling provides design guidance when developing novel low drag, self-cleaning, and potentially antifouling surfaces for medical, marine, and industrial applications.

METHOD OF CLEANING METAL SURFACES

DOEpatents

Winkler, H.W.; Morfitt, J.W.; Little, T.H.

1959-05-19

Cleaning fluids for removing deposits from metal surfaces are described. The cleaning agents of the invention consist of aqueous nitric acid and an amhydrous nitrate salt of a metal which is lower in the electromotive series than the element of the deposit to be removed. In general, the salt content of thc cleaning agents ranged from 10 to 90%, preferably from 10 to 40% by weight; and the balance of the composition comprises nitric acid of any strength from extremely dilute up to concentrated strength.

Novel pathways for elimination of chlorine atoms from growing Si(100) surfaces in CVD reactors

NASA Astrophysics Data System (ADS)

Kunioshi, Nílson; Hagino, Sho; Fuwa, Akio; Yamaguchi, Katsunori

2018-05-01

Reactions leading to elimination of chlorine atoms from growing Si(100) surfaces were simulated using clusters of silicon atoms of different sizes and shapes, and at the UB3LYP/6-31 g(d,p) level of theory. The reactions of type SiCl2(s) + 2 H2(g), where (s) indicates an adsorbed species at the surface and (g) a gas-phase species, were found to proceed in two steps: SiCl2(s) + H2(g) → SiHCl(s) + HCl(g) and SiHCl(s) + H2(g) → SiH2(s) + HCl(g), each having activation energies around 55 kcal/mol, a value which is comparable to experimental values published in the literature. In addition, the results suggested that H-passivation of Si(100) surfaces support reactions leading to canonical epitaxial growth, providing a plausible explanation for the convenience of passivating the surfaces prior to silicon deposition. The reactions analyzed here can therefore be seen as important steps in the mechanism of epitaxial growth of Si(100) surfaces.

Cleaning of titanium substrates after application in a bioreactor.

PubMed

Fingerle, Mathias; Köhler, Oliver; Rösch, Christina; Kratz, Fabian; Scheibe, Christian; Davoudi, Neda; Müller-Renno, Christine; Ziegler, Christiane; Huster, Manuel; Schlegel, Christin; Ulber, Roland; Bohley, Martin; Aurich, Jan C

2015-03-10

Plain and microstructured cp-titanium samples were studied as possible biofilm reactor substrates. The biofilms were grown by exposition of the titanium samples to bacteria in a flow cell. As bacteria the rod shaped gram negative Pseudomonas fluorescens and the spherical gram negative Paracoccus seriniphilus were chosen. Afterward, the samples were cleaned in subsequent steps: First, with a standard solvent based cleaning procedure with acetone, isopropanol, and ultrapure water and second by oxygen plasma sputtering. It will be demonstrated by means of x-ray photoelectron spectroscopy, fluorescence microscopy, and confocal laser scanning microscopy that oxygen plasma cleaning is a necessary and reliant tool to fully clean and restore titanium surfaces contaminated with a biofilm. The microstructured surfaces act beneficial to biofilm growth, while still being fully restorable after biofilm contamination. Scanning electron microscopy images additionally show, that the plasma process does not affect the microstructures. The presented data show the importance of the cleaning procedure. Just using solvents does not remove the biofilm and all its components reliably while a cleaning process by oxygen plasma regenerates the surfaces.

Tuning the adhesion between polyimide substrate and MWCNTs/epoxy nanocomposite by surface treatment

NASA Astrophysics Data System (ADS)

Bouhamed, Ayda; Kia, Alireza Mohammadian; Naifar, Slim; Dzhagan, Volodymyr; Müller, Christian; Zahn, Dietrich R. T.; Choura, Slim; Kanoun, Olfa

2017-11-01

MWCNTs/epoxy nanocomposite thin films are coated on the polyimide (PI) flexible substrate, to be used as a strain sensor. Previous studies showed that the adhesion between polyimide and other materials are very poor. In this work, two approaches, oxygen plasma cleaning and simple solvent cleaning are performed for activation of the polyimide surface. In order to understand the impact of both cleaning techniques, the physicochemical properties of PI are measured and characterized using contact angle measurements (CAMs), X-ray photoelectron spectroscopy(XPS), and atomic force microscopy (AFM). In addition, the adhesion properties of PI/[MWCNTs/epoxy] systems by varying surface treatment time are investigated and evaluated using force-distance measurements by AFM. The results illustrate that the activated surface exhibits higher surface energy for oxygen plasma cleaning in comparison with the solvent cleaning method. The improvement can be related to the increase of oxygen concentration, which is accompanied by the enhancement of the polar component to 53.79 mN/m due to the formation of functional groups on the surface and the change of the substrate surface roughness from 1.72 nm to 15.5 nm. As a result, improved adhesion was observed from force-distance measurement between PI/[MWCNTs/epoxy] systems due to oxygen plasma effects.

Gold cleaning methods for preparation of cell culture surfaces for self-assembled monolayers of zwitterionic oligopeptides.

PubMed

Enomoto, Junko; Kageyama, Tatsuto; Myasnikova, Dina; Onishi, Kisaki; Kobayashi, Yuka; Taruno, Yoko; Kanai, Takahiro; Fukuda, Junji

2018-05-01

Self-assembled monolayers (SAMs) have been used to elucidate interactions between cells and material surface chemistry. Gold surfaces modified with oligopeptide SAMs exhibit several unique characteristics, such as cell-repulsive surfaces, micropatterns of cell adhesion and non-adhesion regions for control over cell microenvironments, and dynamic release of cells upon external stimuli under culture conditions. However, basic procedures for the preparation of oligopeptide SAMs, including appropriate cleaning methods of the gold surface before modification, have not been fully established. Because gold surfaces are readily contaminated with organic compounds in the air, cleaning methods may be critical for SAM formation. In this study, we examined the effects of four gold cleaning methods: dilute aqua regia, an ozone water, atmospheric plasma, and UV irradiation. Among the methods, UV irradiation most significantly improved the formation of oligopeptide SAMs in terms of repulsion of cells on the surfaces. We fabricated an apparatus with a UV light source, a rotation table, and HEPA filter, to treat a number of gold substrates simultaneously. Furthermore, UV-cleaned gold substrates were capable of detaching cell sheets without serious cell injury. This may potentially provide a stable and robust approach to oligopeptide SAM-based experiments for biomedical studies. Copyright © 2017 The Society for Biotechnology, Japan. Published by Elsevier B.V. All rights reserved.

Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wan, Yimao, E-mail: yimao.wan@anu.edu.au; Yan, Di; Bullock, James

2015-12-07

A sub-nm hydrogenated amorphous silicon (a-Si:H) film capped with silicon nitride (SiN{sub x}) is shown to provide a high level passivation to crystalline silicon (c-Si) surfaces. When passivated by a 0.8 nm a-Si:H/75 nm SiN{sub x} stack, recombination current density J{sub 0} values of 9, 11, 47, and 87 fA/cm{sup 2} are obtained on 10 Ω·cm n-type, 0.8 Ω·cm p-type, 160 Ω/sq phosphorus-diffused, and 120 Ω/sq boron-diffused silicon surfaces, respectively. The J{sub 0} on n-type 10 Ω·cm wafers is further reduced to 2.5 ± 0.5 fA/cm{sup 2} when the a-Si:H film thickness exceeds 2.5 nm. The passivation by the sub-nm a-Si:H/SiN{sub x} stack is thermally stable at 400 °C in N{sub 2} formore » 60 min on all four c-Si surfaces. Capacitance–voltage measurements reveal a reduction in interface defect density and film charge density with an increase in a-Si:H thickness. The nearly transparent sub-nm a-Si:H/SiN{sub x} stack is thus demonstrated to be a promising surface passivation and antireflection coating suitable for all types of surfaces encountered in high efficiency c-Si solar cells.« less

Laboratory demonstration model: Active cleaning technique device. [for removal of contaminants from an optical surface

NASA Technical Reports Server (NTRS)

Shannon, R. L.; Gillette, R. B.

1974-01-01

The technique which utilizes exposure to a plasma to remove contaminants from a surface was incorporated into a laboratory model which demonstrates active cleaning by both plasma cleaning and ion sputtering modes of operation. The development phase is reported and includes discussion of the plasma tube configuration, device design, and performance tests. A general description of the active cleaning device is provided which includes information on the main power/plasma discharge sensors, and the power, gas supply, and ion accelerator systems. Development of the active cleaning species at high vacuum conditions is described and results indicate that plasma cleaning occurs in the region of a visible plume which extends from the end of the plasma tube. Recommendations are made for research to determine the plasma cleaning mechanism and the plasma species responsible for the cleaning, as well limitations on the type of contaminants that can be removed.

[Effect of SiO₂-ZrO₂slurry coating on surface performance of zirconia ceramic].

PubMed

Du, Qiao; Niu, Guangliang; Lin, Hong; Jiang, Ruodan

2015-11-01

To evaluate the effect of SiO₂-ZrO₂slurry coating on surface performance of zirconia ceramic. Seventy pre-sintered zirconia discs were randomly divided into seven groups with 10 discs per group. Sample discs in each group received one of the following seven different surface treatments, namely, sintered (group AS), sand blasting after sintered (group SB), coated with slurry of mole ratio of SiO₂to ZrO₂2:1 (group 2SiO₂-1ZrO₂), coated with slurry of mole ratio of SiO₂to ZrO₂1:1 (group 1SiO₂-1ZrO₂), coated with slurry of mole ratio of SiO₂to ZrO₂1:2 (group 1SiO₂-2ZrO₂), coated with slurry of mole ratio of SiO₂to ZrO₂1:3 (group 1SiO₂-3ZrO₂), coated with slurry of mole ratio of SiO₂to ZrO₂1:4 (group 1SiO₂-4ZrO₂). Profilometer, X-ray diffractometer (XRD), energy dispersive spectrometer, scanning electron microscopy (SEM) were used to analyze surface performance. The surface roughness of the discs in group AS was lower than those in the other groups [(0.33 ± 0.03) µm] (P < 0.05), there was no statistically significant difference (P > 0.05) among group 2SiO₂-1ZrO₂[(3.85 ± 0.38) µm], group 1SiO₂-1ZrO₂[(3.78 ± 0.56) µm] and group 1SiO₂-2ZrO₂[(4.06 ± 0.48) µm], and no difference (P > 0.05) was observed between group 1SiO₂-3ZrO₂[(1.02 ± 0.09) µm] and group 1SiO₂-4ZrO₂[(1.53 ± 0.23) µm] either. However, surface roughness in all coating groups was higher than those in group SB [(0.86 ± 0.05) µm] (P < 0.05). According to the XRD pattern, group AS and all coating groups consisted of 100% tetragonal airconia and monoclinic zirconia was detected at surface of group SB. Contents of surface silicon of coating groups increased significantly, however, no silicon was detected at sample surface of group AS and group SB. SEM showed that zirconia grains of coating exposed since part of silicon was etched by hydrofluoric acid, a three-dimensional network of intergrain nano-spaces was created. SiO₂-ZrO₂slurry coating could make surface of zirconia rough and increase Si content without creating monoclinic zirconia.

Automated Array Assembly Task In-depth Study of Silicon Wafer Surface Texturizing

NASA Technical Reports Server (NTRS)

Jones, G. T.; Chitre, S.; Rhee, S. S.; Allison, K. L.

1979-01-01

A low cost wafer surface texturizing process was studied. An investigation of low cost cleaning operations to clean residual wax and organics from the surface of silicon wafers was made. The feasibility of replacing dry nitrogen with clean dry air for drying silicon wafers was examined. The two stage texturizing process was studied for the purpose of characterizing relevant parameters in large volume applications. The effect of gettering solar cells on photovoltaic energy conversion efficiency is described.

Surface Analysis Evaluation of Handwipe Cleaning for the Space Shuttle RSRM

NASA Technical Reports Server (NTRS)

Lesley, Michael W.; Anderson, Erin L.; McCool, Alex (Technical Monitor)

2001-01-01

In this paper we discuss the role of surface-sensitive spectroscopy (electron spectroscopy for chemical analysis, or ESCA) in the selection of solvents to replace 1,1,1-trichloroethane in handwipe cleaning of bonding surfaces on NASA's Space Shuttle Reusable Solid Rocket Motor (RSRM). Removal of common process soils from a wide variety of metallic and polymeric substrates was characterized. The cleaning efficiency was usually more dependent on the type of substrate being cleaned and the specific process soil than on the solvent used. A few substrates that are microscopically rough or porous proved to be difficult to clean with any cleaner, and some soils were very tenacious and difficult to remove from any substrate below detection limits. Overall, the work showed that a wide variety of solvents will perform at least as well as 1,1,1-trichloroethane.

Review of dust transport and mitigation technologies in lunar and Martian atmospheres

NASA Astrophysics Data System (ADS)

Afshar-Mohajer, Nima; Wu, Chang-Yu; Curtis, Jennifer Sinclair; Gaier, James R.

2015-09-01

Dust resuspension and deposition is a ubiquitous phenomenon in all lunar and Martian missions. The near-term plans to return to the Moon as a stepping stone to further exploration of Mars and beyond bring scientists' attention to development and evaluation of lunar and Martian dust mitigation technologies. In this paper, different lunar and Martian dust transport mechanisms are presented, followed by a review of previously developed dust mitigation technologies including fluidal, mechanical, electrical and passive self-cleaning methods for lunar/Martian installed surfaces along with filtration for dust control inside cabins. Key factors in choosing the most effective dust mitigation technology are recognized to be the dust transport mechanism, energy consumption, environment, type of surface materials, area of the surface and surface functionality. While electrical methods operating at higher voltages are identified to be suitable for small but light sensitive surfaces, pre-treatment of the surface is effective for cleaning thermal control surfaces, and mechanical methods are appropriate for surfaces with no concerns of light blockage, surface abrasion and 100% cleaning efficiency. Findings from this paper can help choose proper surface protection/cleaning for future space explorations. Hybrid techniques combining the advantages of different methods are recommended.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hasanah, Lilik, E-mail: lilikhasanah@upi.edu; Suhendi, Endi; Tayubi, Yuyu Rahmat

In this work we discuss the surface roughness of Si interface impact to the tunneling current of the Si/Si{sub 1-x}Ge{sub x}/Si heterojunction bipolar transistor. The Si interface surface roughness can be analyzed from electrical characteristics through the transversal electron velocity obtained as fitting parameter factor. The results showed that surface roughness increase as Ge content of virtual substrate increase This model can be used to investigate the effect of Ge content of the virtual substrate to the interface surface condition through current-voltage characteristic.

A Three-Step Atomic Layer Deposition Process for SiN x Using Si2Cl6, CH3NH2, and N2 Plasma.

PubMed

Ovanesyan, Rafaiel A; Hausmann, Dennis M; Agarwal, Sumit

2018-06-06

We report a novel three-step SiN x atomic layer deposition (ALD) process using Si 2 Cl 6 , CH 3 NH 2 , and N 2 plasma. In a two-step process, nonhydrogenated chlorosilanes such as Si 2 Cl 6 with N 2 plasmas lead to poor-quality SiN x films that oxidize rapidly. The intermediate CH 3 NH 2 step was therefore introduced in the ALD cycle to replace the NH 3 plasma step with a N 2 plasma, while using Si 2 Cl 6 as the Si precursor. This three-step process lowers the atomic H content and improves the film conformality on high-aspect-ratio nanostructures as Si-N-Si bonds are formed during a thermal CH 3 NH 2 step in addition to the N 2 plasma step. During ALD, the reactive surface sites were monitored using in situ surface infrared spectroscopy. Our infrared spectra show that, on the post-N 2 plasma-treated SiN x surface, Si 2 Cl 6 reacts primarily with the surface -NH 2 species to form surface -SiCl x ( x = 1, 2, or 3) bonds, which are the reactive sites during the CH 3 NH 2 cycle. In the N 2 plasma step, reactive -NH 2 surface species are created because of the surface H available from the -CH 3 groups. At 400 °C, the SiN x films have a growth per cycle of ∼0.9 Å with ∼12 atomic percent H. The films grown on high-aspect-ratio nanostructures have a conformality of ∼90%.

The role of groundwater discharge fluxes on Si:P ratios in a major tributary to Lake Erie.

PubMed

Maavara, Taylor; Slowinski, Stephanie; Rezanezhad, Fereidoun; Van Meter, Kimberly; Van Cappellen, Philippe

2018-05-01

Groundwater discharge can be a major source of nutrients to river systems. Although quantification of groundwater nitrate loading to streams is common, the dependence of surface water silicon (Si) and phosphorus (P) concentrations on groundwater sources has rarely been determined. Additionally, the ability of groundwater discharge to drive surface water Si:P ratios has not been contextualized relative to riverine inputs or in-stream transformations. In this study, we quantify the seasonal dynamics of Si and P cycles in the Grand River (GR) watershed, the largest Canadian watershed draining into Lake Erie, to test our hypothesis that regions of Si-rich groundwater discharge increase surface water Si:P ratios. Historically, both the GR and Lake Erie have been considered stoichiometrically P-limited, where the molar Si:P ratio is greater than the ~16:1 phytoplankton uptake ratio. However, recent trends suggest that eastern Lake Erie may be approaching Si-limitation. We sampled groundwater and surface water for dissolved and reactive particulate Si as well as total dissolved P for 12months within and downstream of a 50-km reach of high groundwater discharge. Our results indicate that groundwater Si:P ratios are lower than the corresponding surface water and that groundwater is a significant source of bioavailable P to surface water. Despite these observations, the watershed remains P-limited for the majority of the year, with localized periods of Si-limitation. We further find that groundwater Si:P ratios are a relatively minor driver of surface water Si:P, but that the magnitude of Si and P loads from groundwater represent a large proportion of the overall fluxes to Lake Erie. Copyright © 2017 Elsevier B.V. All rights reserved.

Dynamics of solid thin-film dewetting in the silicon-on-insulator system

NASA Astrophysics Data System (ADS)

Bussmann, E.; Cheynis, F.; Leroy, F.; Müller, P.; Pierre-Louis, O.

2011-04-01

Using low-energy electron microscopy movies, we have measured the dewetting dynamics of single-crystal Si(001) thin films on SiO2 substrates. During annealing (T>700 °C), voids open in the Si, exposing the oxide. The voids grow, evolving Si fingers that subsequently break apart into self-organized three-dimensional (3D) Si nanocrystals. A kinetic Monte Carlo model incorporating surface and interfacial free energies reproduces all the salient features of the morphological evolution. The dewetting dynamics is described using an analytic surface-diffusion-based model. We demonstrate quantitatively that Si dewetting from SiO2 is mediated by surface-diffusion driven by surface free-energy minimization.

An evaluation of the efficiency of cleaning methods in a bacon factory

PubMed Central

Dempster, J. F.

1971-01-01

The germicidal efficiencies of hot water (140-150° F.) under pressure (method 1), hot water + 2% (w/v) detergent solution (method 2) and hot water + detergent + 200 p.p.m. solution of available chlorine (method 3) were compared at six sites in a bacon factory. Results indicated that sites 1 and 2 (tiled walls) were satisfactorily cleaned by each method. It was therefore considered more economical to clean such surfaces routinely by method 1. However, this method was much less efficient (31% survival of micro-organisms) on site 3 (wooden surface) than methods 2 (7% survival) and 3 (1% survival). Likewise the remaining sites (dehairing machine, black scraper and table) were least efficiently cleaned by method 1. The most satisfactory results were obtained when these surfaces were treated by method 3. Pig carcasses were shown to be contaminated by an improperly cleaned black scraper. Repeated cleaning and sterilizing (method 3) of this equipment reduced the contamination on carcasses from about 70% to less than 10%. PMID:5291745

Visualization of flow during cleaning process on a liquid nanofibrous filter

NASA Astrophysics Data System (ADS)

Bílek, P.

2017-10-01

This paper deals with visualization of flow during cleaning process on a nanofibrous filter. Cleaning of a filter is very important part of the filtration process which extends lifetime of the filter and improve filtration properties. Cleaning is carried out on flat-sheet filters, where particles are deposited on the filter surface and form a filtration cake. The cleaning process dislodges the deposited filtration cake, which is loose from the membrane surface to the retentate flow. The blocked pores in the filter are opened again and hydrodynamic properties are restored. The presented optical method enables to see flow behaviour in a thin laser sheet on the inlet side of a tested filter during the cleaning process. The local concentration of solid particles is possible to estimate and achieve new information about the cleaning process. In the article is described the cleaning process on nanofibrous membranes for waste water treatment. The hydrodynamic data were compared to the images of the cleaning process.

Simulation and Experimental Study on Surface Formation Mechanism in Machining of SiCp/Al Composites

NASA Astrophysics Data System (ADS)

Du, Jinguang; Zhang, Haizhen; He, Wenbin; Ma, Jun; Ming, Wuyi; Cao, Yang

2018-03-01

To intuitively reveal the surface formation mechanism in machining of SiCp/Al composites, in this paper the removal mode of reinforced particle and aluminum matrix, and their influence on surface formation mechanism were analyzed by single diamond grit cutting simulation and single diamond grit scratch experiment. Simulation and experiment results show that when the depth of cut is small, the scratched surface of the workpiece is relatively smooth; however, there are also irregular pits on the machined surface. When increasing the depth of cut, there are many obvious laminar structures on the scratched surface, and the surface appearance becomes coarser. When the cutting speed is small, the squeezing action of abrasive grit on SiC particles plays a dominant role in the extrusion of SiC particles. When increasing the cutting speed, SiC particles also occur broken or fractured; but the machined surface becomes smooth. When machining SiCp/Al composites, the SiC may happen in such removal ways, such as fracture, debonding, broken, sheared, pulled into and pulled out, etc. By means of reasonably developing micro cutting finite element simulation model of SiCp/Al composites could be used to analyze the surface formation process and particle removal way in different machining conditions.

Thermal and ion-induced surface reactions of 1,1-difluoroethylene on Si(111)7 x 7 and vitreous SiO2.

PubMed

He, Zhenhua; Leung, K T

2005-08-11

Thermal and ion-induced reactions of 1,1-difluoroethylene (1,1-C2H2F2 or iso-DFE) on Si(111)7 x 7 and vitreous SiO2 surfaces have been investigated by vibrational electron energy loss spectroscopy and thermal desorption spectrometry. Like ethylene, iso-DFE predominantly chemisorbs via a [2 + 2] cycloaddition mechanism onto the 7 x 7 surface as a di-sigma-bonded difluoroethane-1,2-diyl adstructure, which undergoes H abstraction and defluorination, producing hydrocarbon fragments and SiF(x) (x = 1-3) upon annealing to >700 K. Ion irradiation of Si(111)7 x 7 in iso-DFE at 50 eV impact energy appears to substantially enhance the production of hydrocarbon fragments and SiF(x)(), leading to stronger SiF4 desorption products over an extended temperature range (400-900 K). The observed SiC and SiF(x) produced on the 7 x 7 surface by ion irradiation in iso-DFE are found to be similar to those obtained by ion irradiation in the fluoromethane homologues, CF4 and CH2F2. The production of higher relative concentrations for the larger SiF(x) and C2-containing fragments is evidently favored on the 7 x 7 surface. On a vitreous SiO2 surface, ion irradiation in iso-DFE, unlike that in CF4 and CH2F2, appears to produce less SiF(x) than that on the 7 x 7 surface, which indicates that surface O does not interact strongly with the C2-containing fragments. The presence or absence of a C=C bond and the relative F-to-C ratio of the sputtering gas could therefore produce important effects on the resulting surface products obtained by low-energy ion irradiation.

Nanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition

NASA Astrophysics Data System (ADS)

Liu, Ying; Hirsch, Dietmar; Fechner, Renate; Hong, Yilin; Fu, Shaojun; Frost, Frank; Rauschenbach, Bernd

2018-01-01

The ion beam sputtering (IBS) of smooth mono-elemental Si with impurity co-deposition is extended to a pre-rippled binary compound surface of fused silica (SiO2). The dependence of the rms roughness and the deposited amount of Al on the distance from the Al source under Ar+ IBS with Al co-deposition was investigated on smooth SiO2, pre-rippled SiO2, and smooth Si surfaces, using atomic force microscopy and X-ray photoelectron spectroscopy. Although the amounts of Al deposited on these three surfaces all decreased with increasing distance from the Al target, the morphology and rms roughness of the smooth Si surface did not demonstrate a strong distance dependence. In contrast to smooth Si, the rms roughness of both the smooth and pre-rippled SiO2 surfaces exhibited a similar distance evolution trend of increasing, decreasing, and final stabilization at the distance where the results were similar to those obtained without Al co-deposition. However, the pre-rippled SiO2 surfaces showed a stronger modulation of rms roughness than the smooth surfaces. At the incidence angles of 60° and 70°, dot-decorated ripples and roof-tiles were formed on the smooth SiO2 surfaces, respectively, whereas nanostructures of closely aligned grains and blazed facets were generated on the pre-rippled SiO2, respectively. The combination of impurity co-deposition with pre-rippled surfaces was found to facilitate the formation of novel types of nanostructures and morphological growth. The initial ripples act as a template to guide the preferential deposition of Al on the tops of the ripples or the ripple sides facing the Al wedge, but not in the valleys between the ripples, leading to 2D grains and quasi-blazed grating, which offer significant promise in optical applications. The rms roughness enhancement is attributed not to AlSi, but to AlOxFy compounds originating mainly from the Al source.

Modification of silicon nitride surfaces with GOPES and APTES for antibody immobilization: computational and experimental studies

NASA Astrophysics Data System (ADS)

Dien To, Thien; Nguyen, Anh Tuan; Nhat Thanh Phan, Khoa; Thu Thi Truong, An; Doan, Tin Chanh Duc; Mau Dang, Chien

2015-12-01

Chemical modification of silicon nitride (SiN) surfaces by silanization has been widely studied especially with 3-(aminopropyl)triethoxysilane (APTES) and 3-(glycidyloxypropyl) dimethylethoxysilane (GOPES). However few reports performed the experimental and computational studies together. In this study, surface modification of SiN surfaces with GOPES and APTES covalently bound with glutaraldehyde (GTA) was investigated for antibody immobilization. The monoclonal anti-cytokeratin-FITC (MACF) antibody was immobilized on the modified SiN surfaces. The modified surfaces were characterized by water contact angle measurements, atomic force microscopy and fluorescence microscopy. The FITC-fluorescent label indicated the existence of MACF antibody on the SiN surfaces and the efficiency of the silanization reaction. Absorption of APTES and GOPES on the oxidized SiN surfaces was computationally modeled and calculated by Materials Studio software. The computational and experimental results showed that modification of the SiN surfaces with APTES and GTA was more effective than the modification with GOPES.

Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

PubMed

Zhang, Liangliang; Guo, Yuzheng; Hassan, Vinayak Vishwanath; Tang, Kechao; Foad, Majeed A; Woicik, Joseph C; Pianetta, Piero; Robertson, John; McIntyre, Paul C

2016-07-27

Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native SiOx/GeOx surface layers, where the GeOx-rich layer is beneath a SiOx-rich surface. Silicon oxide regrows on the SiGe surface during Al2O3 atomic layer deposition, and both SiOx and GeOx regrow during forming gas anneal in the presence of a Pt gate metal. The resulting mixed SiOx-GeOx interface layer causes large interface trap densities (Dit) due to distorted Ge-O bonds across the interface. In contrast, we observe that oxygen-scavenging Al top gates decompose the underlying SiOx/GeOx, in a selective fashion, leaving an ultrathin SiOx interfacial layer that exhibits dramatically reduced Dit.

Enhancement of electroluminescence from embedded Si quantum dots/SiO2multilayers film by localized-surface-plasmon and surface roughening.

PubMed

Li, Wei; Wang, Shaolei; Hu, Mingyue; He, Sufeng; Ge, Pengpeng; Wang, Jing; Guo, Yan Yan; Zhaowei, Liu

2015-07-03

In this paper, we prepared a novel structure to enhance the electroluminescence intensity from Si quantum dots/SiO2multilayers. An amorphous Si/SiO2 multilayer film was fabricated by plasma-enhanced chemical vapor deposition on a Pt nanoparticle (NP)-coated Si nanopillar array substrate. By thermal annealing, an embedded Si quantum dot (QDs)/SiO2 multilayer film was obtained. The result shows that electroluminescence intensity was significantly enhanced. And, the turn-on voltage of the luminescent device was reduced to 3 V. The enhancement of the light emission is due to the resonance coupling between the localized-surface-plasmon (LSP) of Pt NPs and the band-gap emission of Si QDs/SiO2 multilayers. The other factors were the improved absorption of excitation light and the increase of light extraction ratio by surface roughening structures. These excellent characteristics are promising for silicon-based light-emitting applications.

Enhancement of electroluminescence from embedded Si quantum dots/SiO2multilayers film by localized-surface-plasmon and surface roughening

PubMed Central

Li, Wei; Wang, Shaolei; Hu, Mingyue; He, Sufeng; Ge, Pengpeng; Wang, Jing; Guo, Yan Yan; Zhaowei, Liu

2015-01-01

In this paper, we prepared a novel structure to enhance the electroluminescence intensity from Si quantum dots/SiO2multilayers. An amorphous Si/SiO2 multilayer film was fabricated by plasma-enhanced chemical vapor deposition on a Pt nanoparticle (NP)-coated Si nanopillar array substrate. By thermal annealing, an embedded Si quantum dot (QDs)/SiO2 multilayer film was obtained. The result shows that electroluminescence intensity was significantly enhanced. And, the turn-on voltage of the luminescent device was reduced to 3 V. The enhancement of the light emission is due to the resonance coupling between the localized-surface-plasmon (LSP) of Pt NPs and the band-gap emission of Si QDs/SiO2 multilayers. The other factors were the improved absorption of excitation light and the increase of light extraction ratio by surface roughening structures. These excellent characteristics are promising for silicon-based light-emitting applications. PMID:26138830

Cleaning, disinfection and sterilization of surface prion contamination.

PubMed

McDonnell, G; Dehen, C; Perrin, A; Thomas, V; Igel-Egalon, A; Burke, P A; Deslys, J P; Comoy, E

2013-12-01

Prion contamination is a risk during device reprocessing, being difficult to remove and inactivate. Little is known of the combined effects of cleaning, disinfection and sterilization during a typical reprocessing cycle in clinical practice. To investigate the combination of cleaning, disinfection and/or sterilization on reducing the risk of surface prion contamination. In vivo test methods were used to study the impact of cleaning alone and cleaning combined with thermal disinfection and high- or low-temperature sterilization processes. A standardized test method, based on contamination of stainless steel wires with high titres of scrapie-infected brain homogenates, was used to determine infectivity reduction. Traditional chemical methods of surface decontamination against prions were confirmed to be effective, but extended steam sterilization was more variable. Steam sterilization alone reduced the risk of prion contamination under normal or extended exposure conditions, but did show significant variation. Thermal disinfection had no impact in these studies. Cleaning with certain defined formulations in combination with steam sterilization can be an effective prion decontamination process, in particular with alkaline formulations. Low-temperature, gaseous hydrogen peroxide sterilization was also confirmed to reduce infectivity in the presence and absence of cleaning. Prion decontamination is affected by the full reprocessing cycle used on contaminated surfaces. The correct use of defined cleaning, disinfection and sterilization methods as tested in this report in the scrapie infectivity assay can provide a standard precaution against prion contamination. Copyright © 2013 The Healthcare Infection Society. Published by Elsevier Ltd. All rights reserved.

Surface charge transport in Silicon (111) nanomembranes

NASA Astrophysics Data System (ADS)

Hu, Weiwei; Scott, Shelley; Jacobson, Rb; Savage, Donald; Lagally, Max; The Lagally Group Team

Using thin sheets (``nanomembranes'') of atomically flat crystalline semiconductors, we are able to investigate surface electronic properties, using back-gated van der Pauw measurement in UHV. The thinness of the sheet diminishes the bulk contribution, and the back gate tunes the conductivity until the surface dominates, enabling experimental determination of surface conductance. We have previously shown that Si(001) surface states interact with the body of the membrane altering the conductivity of the system. Here, we extended our prior measurements to Si(111) in order to probe the electronic transport properties of the Si(111) 7 ×7 reconstruction. Sharp (7 ×7) LEED images attest to the cleanliness of the Si(111) surface. Preliminary results reveal a highly conductive Si(111) 7 ×7 surface with a sheet conductance Rs of order of μS/ □, for 110nm thick membrane, and Rs is a very slowly varying function of the back gate voltage. This is in strong contrast to Si(001) nanomembranes which have a minimum conductance several orders of magnitude lower, and hints to the metallic nature of the Si(111) surface. Research supported by DOE.

Surface Defect Passivation and Reaction of c-Si in H2S.

PubMed

Liu, Hsiang-Yu; Das, Ujjwal K; Birkmire, Robert W

2017-12-26

A unique passivation process of Si surface dangling bonds through reaction with hydrogen sulfide (H 2 S) is demonstrated in this paper. A high-level passivation quality with an effective minority carrier lifetime (τ eff ) of >2000 μs corresponding to a surface recombination velocity of <3 cm/s is achieved at a temperature range of 550-650 °C. X-ray photoelectron spectroscopy (XPS) confirmed the bonding states of Si and S and provides insights into the reaction pathway of Si with H 2 S and other impurity elements both during and after the reaction. Quantitative analysis of XPS spectra showed that the τ eff increases with an increase in the surface S content up to ∼3.5% and stabilizes thereafter, indicative of surface passivation by monolayer coverage of S on the Si surface. However, S passivation of the Si surface is highly unstable because of thermodynamically favorable reaction with atmospheric H 2 O and O 2 . This instability can be eliminated by capping the S-passivated Si surface with a protective thin film such as low-temperature-deposited amorphous silicon nitride.

In and Si adatoms on Si(111)5×2-Au : Scanning tunneling microscopy and first-principles density functional calculations

NASA Astrophysics Data System (ADS)

Stępniak, A.; Nita, P.; Krawiec, M.; Jałochowski, M.

2009-09-01

Structural properties of monatomic indium chains on Si(111)5×2-Au surface are investigated by scanning tunneling microscopy (STM) and first-principles density functional calculations (DFT). The STM topography data show that submonolayer coverage of indium leads to a well-ordered chain structure with the same periodicity as the Si adatoms form on Si(111)5×2-Au surface. Bias-dependent STM topography and spectroscopy reveal two different mechanisms of In-atoms adsorption on the surface: bonding to Si adatoms and substitution for Si atoms in the adatom positions. Those mechanisms are further corroborated by DFT calculations. The obtained structural model of In-modified Si(111)5×2-Au surface remains in good agreement with the experimental data.

Supersonic Gas-Liquid Cleaning System

NASA Technical Reports Server (NTRS)

Kinney, Frank

1996-01-01

The Supersonic Gas-Liquid Cleaning System Research Project consisted mainly of a feasibility study, including theoretical and engineering analysis, of a proof-of-concept prototype of this particular cleaning system developed by NASA-KSC. The cleaning system utilizes gas-liquid supersonic nozzles to generate high impingement velocities at the surface of the device to be cleaned. The cleaning fluid being accelerated to these high velocities may consist of any solvent or liquid, including water. Compressed air or any inert gas is used to provide the conveying medium for the liquid, as well as substantially reduce the total amount of liquid needed to perform adequate surface cleaning and cleanliness verification. This type of aqueous cleaning system is considered to be an excellent way of conducting cleaning and cleanliness verification operations as replacements for the use of CFC 113 which must be discontinued by 1995. To utilize this particular cleaning system in various cleaning applications for both the Space Program and the commercial market, it is essential that the cleaning system, especially the supersonic nozzle, be characterized for such applications. This characterization consisted of performing theoretical and engineering analysis, identifying desirable modifications/extensions to the basic concept, evaluating effects of variations in operating parameters, and optimizing hardware design for specific applications.

The structural and electronic properties of cleaved silicon (111) surfaces following adsorption of silver

NASA Astrophysics Data System (ADS)

Le Lay, G.; Chauvet, A.; Manneville, M.; Kern, R.

Silver overlayers for coverages ranging from zero to several monolayers are evaporated on vacuum-cleaved (111) silicon surfaces and carefully examined using low-energy electron diffraction (diffraction patterns and I(v) curves), and Auger electron spectroscopy (condensation/desorption curves), with the aim of establishing a closer correlation between the adsorption process, the different superlattices observed (i.e. 7 × 7-R(±19°1), 3 × 3-R(30° ), 3 × 1 and 6 × 1), the growth mechanism of the deposit on the one hand and the electronic properties of the system recently probed using photoemission yield spectroscopy on the other hand. These new results basically confirm the direct relations we had previously shown between the growth mode as monitored with electron diffraction LEED, RHEED, TED and Auger spectroscopy, and the electronic structures as investigated by low energy electron spectroscopy, but permit a deeper insight into the adsorption process at low coverage. At room temperature on the 2 × 1 cleavage structure where the silver-silicon interaction is weak, the adsorbed phase is completed at about 6/7 of a monolayer (θ ≃ 6/7) and a local arrangement of vacancies in the adlayer yields the 7 superstructure, while little effect on the silicon dangling bonds is noticed, but when silver two-dimensional islands (θ > 6/7) growing in a quasi layer fashion have covered the substrate surface. At higher temperatures three-dimensional growth of crystallites occurs after completion of the 3 phase whose saturation coverage increases with condensation temperatures, maxima ranging from θ ˜ 0.7 to θ ˜ 1.0 ( T ˜ 500°C) for different cleaves. This Si(111) 3-Ag surface exhibits again the same dangling bond peak as a clean 2 × 1 Si surface, despite the fact that the interaction between Ag and Si is now rather strong, as is confirmed by desorption experiments ( T ˜ 600°C). We thus critically discuss the geometrical models of this 3 phase previously devised and tentatively propose a new one which accounts better for these recent results, along with models of the 3 × 1 and 6 × 1 structures observed in the course of the desorption process.

[Evaluation of Medical Instruments Cleaning Effect of Fluorescence Detection Technique].

PubMed

Sheng, Nan; Shen, Yue; Li, Zhen; Li, Huijuan; Zhou, Chaoqun

2016-01-01

To compare the cleaning effect of automatic cleaning machine and manual cleaning on coupling type surgical instruments. A total of 32 cleaned medical instruments were randomly sampled from medical institutions in Putuo District medical institutions disinfection supply center. Hygiena System SUREII ATP was used to monitor the ATP value, and the cleaning effect was evaluated. The surface ATP values of the medical instrument of manual cleaning were higher than that of the automatic cleaning machine. Coupling type surgical instruments has better cleaning effect of automatic cleaning machine before disinfection, the application is recommended.

Metal sponge for cryosorption pumping applications

DOEpatents

Myneni, Ganapati R.; Kneisel, Peter

1995-01-01

A system has been developed for adsorbing gases at high vacuum in a closed area. The system utilizes large surface clean anodized metal surfaces at low temperatures to adsorb the gases. The large surface clean anodized metal is referred to as a metal sponge. The metal sponge generates or maintains the high vacuum by increasing the available active cryosorbing surface area.

Hybrid quantum and molecular mechanics embedded cluster models for chemistry on silicon and silicon carbide surfaces

NASA Astrophysics Data System (ADS)

Shoemaker, James Richard

Fabrication of silicon carbide (SiC) semiconductor devices are of interest for aerospace applications because of their high-temperature tolerance. Growth of an insulating SiO2 layer on SiC by oxidation is a poorly understood process, and sometimes produces interface defects that degrade device performance. Accurate theoretical models of surface chemistry, using quantum mechanics (QM), do not exist because of the huge computational cost of solving Schrodinger's equation for a molecular cluster large enough to represent a surface. Molecular mechanics (MM), which describes a molecule as a collection of atoms interacting through classical potentials, is a fast computational method, good at predicting molecular structure, but cannot accurately model chemical reactions. A new hybrid QM/MM computational method for surface chemistry was developed and applied to silicon and SiC surfaces. The addition of MM steric constraints was shown to have a large effect on the energetics of O atom adsorption on SiC. Adsorption of O atoms on Si-terminated SiC(111) favors above surface sites, in contrast to Si(111), but favors subsurface adsorption sites on C- terminated SiC(111). This difference, and the energetics of C atom etching via CO2 desorption, can explain the observed poor performance of SiC devices in which insulating layers were grown on C-terminated surfaces.

Interface Engineering to Create a Strong Spin Filter Contact to Silicon

PubMed Central

Caspers, C.; Gloskovskii, A.; Gorgoi, M.; Besson, C.; Luysberg, M.; Rushchanskii, K. Z.; Ležaić, M.; Fadley, C. S.; Drube, W.; Müller, M.

2016-01-01

Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directly on silicon is a perfect route to enrich silicon nanotechnology with spin filter functionality. To date, the inherent chemical reactivity between EuO and Si has prevented a heteroepitaxial integration without significant contaminations of the interface with Eu silicides and Si oxides. We present a solution to this long-standing problem by applying two complementary passivation techniques for the reactive EuO/Si interface: (i) an in situ hydrogen-Si (001) passivation and (ii) the application of oxygen-protective Eu monolayers–without using any additional buffer layers. By careful chemical depth profiling of the oxide-semiconductor interface via hard x-ray photoemission spectroscopy, we show how to systematically minimize both Eu silicide and Si oxide formation to the sub-monolayer regime–and how to ultimately interface-engineer chemically clean, heteroepitaxial and ferromagnetic EuO/Si (001) in order to create a strong spin filter contact to silicon. PMID:26975515

Physics and Chemistry on Well-Defined Semiconductor and Oxide Surfaces

NASA Astrophysics Data System (ADS)

Chen, Peijun

High resolution electron energy loss spectroscopy (HREELS) and other surface spectroscopic techniques have been employed to investigate the following two classes of surface/interface phenomena on well-defined semiconductor and oxide surfaces: (i) the fundamental physical and chemical processes involved in gas-solid interaction on silicon single crystal surfaces, and (ii) the physical and chemical properties of metal-oxide interfaces. The particular systems reported in this dissertation are: NH_3, PH_3 and B_ {10}H_{14} on Si(111)-(7 x 7); NH_3 on Si(100) -(2 x 1); atomic H on Si(111)-(7 x 7) and boron-modified Si(111); Al on Al_2O_3 and Sn on SiO_2.. On silicon surfaces, the surface dangling bonds function as the primary adsorption sites where surface chemical processes take place. The unambiguous identification of surface species by vibrational spectroscopy allows the elementary steps involved in these surface chemical processes to be followed on a molecular level. For adsorbate molecules such as NH_3 and PH_3, the nature of the initial low temperature (100 -300 K) adsorption is found to be dissociative, while that for B_{10}H_ {14} is non-dissociative. This has been deduced based upon the presence (or absence) of specific characteristic vibrational mode(s) on surface. By following the evolution of surface species as a function of temperature, the elementary steps leading to silicon nitride thin film growth and doping of silicon are elucidated. In the case of NH_3 on Si(111)-(7 x 7) and Si(100)-(2 x 1), a detailed understanding on the role of substrate surface structure in controlling the surface reactivity has been gained on the basis of a Si adatom backbond-strain relief mechanism on the Si(111) -(7 x 7). The electronic modification to Si(111) surface by subsurface boron doping has been shown to quench its surface chemistry, even for the most aggressive atomic H. This discovery is potentially meaningful to the technology of gas-phase silicon etching. The electron energy loss studies on the excitation of surface plasmon in heavily B-doped Si(111) and the investigation of surface optical phonon modes in aluminum oxide thin films provide insights into the sensitive dependence of the physical properties of a solid upon its chemical modification. Successful interpretations of these elementary excitation features are built upon the understanding of the fundamental physics of low-energy electron-solid interaction. Finally, the temperature behavior of the interfacial properties of Sn/SiO_2 are explored.

Theoretical considerations of soil retention. [dirtying of solar energy devices

NASA Technical Reports Server (NTRS)

Cuddihy, E. F.

1980-01-01

The performance of solar energy devices is adversely affected by surface soiling, and generally, the loss of performance increases with increases in the quantity of soil retained on their surfaces. To minimize performance losses caused by soiling, solar devices should not only be deployed in low soiling geographical areas, but employ surfaces or surfacing materials having low affinity for soil retention, maximum susceptibility to be naturally cleaned by wind, rain and snow, and to be readily cleanable by simple and inexpensive maintenance cleaning techniques. This article describes known and postulated mechanisms of soil retention on surfaces, and infers from these mechanisms that low soiling and easily cleanable surfaces should have low surface energy, and be hard, smooth, hydrophobic and chemically clean of sticky materials and water soluble salts.

Immobilization of functional oxide nanoparticles on silicon surfaces via Si-C bonded polymer brushes.

PubMed

Xu, F J; Wuang, S C; Zong, B Y; Kang, E T; Neoh, K G

2006-05-01

A method for immobilizing and mediating the spatial distribution of functional oxide (such as SiO2 and Fe3O4) nanoparticles (NPs) on (100)-oriented single crystal silicon surface, via Si-C bonded poly(3-(trimethoxysilyl)propyl methacrylate) (P(TMSPM)) brushes from surface-initiated atom transfer radical polymerization (ATRP) of (3-(trimethoxysilyl)propyl methacrylate) (TMSPM), was described. The ATRP initiator was covalently immobilized via UV-induced hydrosilylation of 4-vinylbenzyl chloride (VBC) with the hydrogen-terminated Si(100) surface (Si-H surface). The surface-immobilized Fe3O4 NPs retained their superparamagnetic characteristics and their magnetization intensity could be mediated by adjusting the thickness of the P(TMSPM) brushes.

Adsorption of Amorphous Silica Nanoparticles onto Hydroxyapatite Surfaces Differentially Alters Surfaces Properties and Adhesion of Human Osteoblast Cells

PubMed Central

Kalia, Priya; Brooks, Roger A.; Kinrade, Stephen D.; Morgan, David J.; Brown, Andrew P.; Rushton, Neil; Jugdaohsingh, Ravin

2016-01-01

Silicon (Si) is suggested to be an important/essential nutrient for bone and connective tissue health. Silicon-substituted hydroxyapatite (Si-HA) has silicate ions incorporated into its lattice structure and was developed to improve attachment to bone and increase new bone formation. Here we investigated the direct adsorption of silicate species onto an HA coated surface as a cost effective method of incorporating silicon on to HA surfaces for improved implant osseointegration, and determined changes in surface characteristics and osteoblast cell adhesion. Plasma-sprayed HA-coated stainless steel discs were incubated in silica dispersions of different concentrations (0–42 mM Si), at neutral pH for 12 h. Adsorbed Si was confirmed by XPS analysis and quantified by ICP-OES analysis following release from the HA surface. Changes in surface characteristics were determined by AFM and measurement of surface wettability. Osteoblast cell adhesion was determined by vinculin plaque staining. Maximum Si adsorption to the HA coated disc occurred after incubation in the 6 mM silica dispersion and decreased progressively with higher silica concentrations, while no adsorption was observed with dispersions below 6 mM Si. Comparison of the Si dispersions that produced the highest and lowest Si adsorption to the HA surface, by TEM-based analysis, revealed an abundance of small amorphous nanosilica species (NSP) of ~1.5 nm in diameter in the 6 mM Si dispersion, with much fewer and larger NSP in the 42 mM Si dispersions. 29Si-NMR confirmed that the NSPs in the 6 mM silica dispersion were polymeric and similar in composition to the larger NSPs in the 42 mM Si dispersion, suggesting that the latter were aggregates of the former. Amorphous NSP adsorbed from the 6 mM dispersion on to a HA-coated disc surface increased the surface’s water contact angle by 53°, whereas that adsorbed from the 42 mM dispersion decreased the contact angle by 18°, indicating increased and decreased hydrophobicity, respectively. AFM showed an increase in surface roughness of the 6 mM Si treated surface, which correlated well with an increase in number of vinculin plaques. These findings suggest that NSP of the right size (relative to charge) adsorb readily to the HA surface, changing the surface characteristics and, thus, improving osteoblast cell adhesion. This treatment provides a simple way to modify plasma-coated HA surfaces that may enable improved osseointegration of bone implants. PMID:26863624

Atomic insight into tribochemical wear mechanism of silicon at the Si/SiO2 interface in aqueous environment: Molecular dynamics simulations using ReaxFF reactive force field

NASA Astrophysics Data System (ADS)

Wen, Jialin; Ma, Tianbao; Zhang, Weiwei; Psofogiannakis, George; van Duin, Adri C. T.; Chen, Lei; Qian, Linmao; Hu, Yuanzhong; Lu, Xinchun

2016-12-01

In this work, the atomic mechanism of tribochemical wear of silicon at the Si/SiO2 interface in aqueous environment was investigated using ReaxFF molecular dynamics (MD) simulations. Two types of Si atom removal pathways were detected in the wear process. The first is caused by the destruction of stretched Si-O-Si bonds on the Si substrate surface and is assisted by the attachment of H atoms on the bridging oxygen atoms of the bonds. The other is caused by the rupture of Si-Si bonds in the stretched Si-Si-O-Si bond chains at the interface. Both pathways effectively remove Si atoms from the silicon surface via interfacial Si-O-Si bridge bonds. Our simulations also demonstrate that higher pressures applied to the silica phase can cause more Si atoms to be removed due to the formation of increased numbers of interfacial Si-O-Si bridge bonds. Besides, water plays a dual role in the wear mechanism, by oxidizing the Si substrate surface as well as by preventing the close contact of the surfaces. This work shows that the removal of Si atoms from the substrate is a result of both chemical reaction and mechanical effects and contributes to the understanding of tribochemical wear behavior in the microelectromechanical systems (MEMS) and Si chemical mechanical polishing (CMP) process.

AGING WATER INFRASTRUCTURE RESEARCH PROGRAM: ADDRESSING THE CHALLENGE THROUGH INNOVATION

EPA Science Inventory

A driving force behind the Sustainable Water Infrastructure (SI) initiative and the Aging Water Infrastructure (AWI) research program is the Clean Water and Drinking Water Infrastructure Gap Analysis. In this report, EPA estimated that if operation, maintenance, and capital inves...

Surface functionalized SiO2 nanoparticles with cationic polymers via the combination of mussel inspired chemistry and surface initiated atom transfer radical polymerization: Characterization and enhanced removal of organic dye.

PubMed

Huang, Qiang; Liu, Meiying; Mao, Liucheng; Xu, Dazhuang; Zeng, Guangjian; Huang, Hongye; Jiang, Ruming; Deng, Fengjie; Zhang, Xiaoyong; Wei, Yen

2017-08-01

Monodispersed SiO 2 particles functionalized with cationic polymers poly-((3-acrylamidopropyl)trimethylammonium chloride) (PAPTCl) were prepared using mussel inspired surface modification strategy and surface initiated atom transfer radical polymerization (SI-ATRP). Fourier transform infrared spectroscopy, transmission electron microscope, thermogravimetric analysis, X-ray photoelectron spectroscopy, and zeta potential were employed to characterize these SiO 2 samples. The adsorption performance of the functionalized SiO 2 (donated as SiO 2 -PDA-PAPTCl) towards anionic organic dye Congo red (CR) was investigated to evaluate their potential environmental applications. We demonstrated that the surface of SiO 2 particles can be successfully functionalized with cationic PAPTCl. The adsorption capability of as-prepared SiO 2 was found to increases from 28.70 and 106.65mg/g after surface grafted with cationic polymers. The significant enhancement in the adsorption capability of SiO 2 -PDA-PAPTCl is mainly attributed to the introduction of cationic polymers. More importantly, this strategy is expected to be promising for fabrication of many other functional polymer nanocomposites for environmental applications due to the universality of mussel inspired chemistry and well designability and good monomer adaptability of SI-ATRP. Copyright © 2017 Elsevier Inc. All rights reserved.

Silicene-terminated surface of calcium and strontium disilicides: properties and comparison with bulk structures by computational methods

NASA Astrophysics Data System (ADS)

Brázda, Petr; Mutombo, Pingo; Ondráček, Martin; Corrêa, Cinthia Antunes; Kopeček, Jaromír; Palatinus, Lukáš

2018-05-01

The bulk and surface structures of calcium and strontium disilicides are investigated by computational methods using density functional theory. The investigated structures are R6, R3 and P1-CaSi2 and P1-SrSi2. The investigated properties are the cleavage energy at the silicene sheet, buckling of the bulk and surface silicene layers, charge transfer from calcium to silicon, band structure of bulk and surface-terminated structures and adsorption energies on H atoms and H2 molecules on the silicene-terminated surface of the R3 phase. The cleavage energy at the silicene surface is low in all cases. Structures P1-CaSi2 and R3-CaSi2 contain silicene sheets with different coordination to Ca, while R6-CaSi2 contains both types of the sheets. It is shown that the properties of the two types of silicene-like sheets in R6-CaSi2 are similar to those of the corresponding sheets in P1-CaSi2 and R3-CaSi2, and the thermodynamically stable R6 phase is a good candidate for experimental investigation of silicene-terminated surface in calcium disilicide.

Modulating the Surface State of SiC to Control Carrier Transport in Graphene/SiC.

PubMed

Jia, Yuping; Sun, Xiaojuan; Shi, Zhiming; Jiang, Ke; Liu, Henan; Ben, Jianwei; Li, Dabing

2018-05-28

Silicon carbide (SiC) with epitaxial graphene (EG/SiC) shows a great potential in the applications of electronic and photoelectric devices. The performance of devices is primarily dependent on the interfacial heterojunction between graphene and SiC. Here, the band structure of the EG/SiC heterojunction is experimentally investigated by Kelvin probe force microscopy. The dependence of the barrier height at the EG/SiC heterojunction to the initial surface state of SiC is revealed. Both the barrier height and band bending tendency of the heterojunction can be modulated by controlling the surface state of SiC, leading to the tuned carrier transport behavior at the EG/SiC interface. The barrier height at the EG/SiC(000-1) interface is almost ten times that of the EG/SiC(0001) interface. As a result, the amount of carrier transport at the EG/SiC(000-1) interface is about ten times that of the EG/SiC(0001) interface. These results offer insights into the carrier transport behavior at the EG/SiC heterojunction by controlling the initial surface state of SiC, and this strategy can be extended in all devices with graphene as the top layer. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Adsorption study of copper phthalocyanine on Si(111)(√3 × √3)R30°Ag surface

NASA Astrophysics Data System (ADS)

Menzli, S.; Ben Hamada, B.; Arbi, I.; Souissi, A.; Laribi, A.; Akremi, A.; Chefi, C.

2016-04-01

The adsorption of copper phthalocyanine (CuPc) molecules on Si(111)(√3 × √3)R30°Ag surface is studied at room temperature under ultra high vacuum. Crystallographic, chemical and electronic properties of the interface are investigated by low energy electron diffraction (LEED), ultraviolet and X-ray photoemission spectroscopies (UPS, XPS) and X-ray photoemission diffraction (XPD). LEED and XPD results indicate that after one monolayer deposition the molecular layer is highly ordered with a flat lying adsorption configuration. The corresponding pattern reveals the coexistence of three symmetrically equivalent orientations of molecules with respect to the substrate. XPS core level spectra of the substrate reveal that there is no discernible chemical interaction between molecules and substrate; however there is evidence of Fermi level movement. During the growth, the work function was found to decrease from 4.90 eV for the clean substrate to 4.35 eV for the highest coverage (60 monolayers). Within a thickness of two monolayer deposition an interface dipole of 0.35 eV and a band bending of 0.2 eV have been found. UPS spectra indicate the existence of a band bending of the highest occupied molecular orbital (HOMO) of 0.55 eV. The changes in the work function, in the Fermi level position and in the HOMO state have been used to determine the energy level alignment at the interface.

Application of CO2 Snow Jet Cleaning in Conjunction with Laboratory Based Total Reflection X-Ray Fluorescence

NASA Technical Reports Server (NTRS)

Schmeling, M.; Burnett, D. S.; Allton, J. H.; Rodriquez, M.; Tripa, C. E.; Veryovkin, I. V.

2013-01-01

The Genesis mission was the first mission returning solar material to Earth since the Apollo program [1,2]. Unfortunately the return of the space craft on September 8, 2004 resulted in a crash landing, which shattered the samples into small fragments and exposed them to desert soil and other debris. Thus only small fragments of the original collectors are available, each having different degrees of surface contamination. Thorough surface cleaning is required to allow for subsequent analysis of solar wind material embedded within. An initial cleaning procedure was developed in coordination with Johnson Space Center which focused on removing larger sized particulates and a thin film organic contamination acquired during collection in space [3]. However, many of the samples have additional residues and more rigorous and/or innovative cleaning steps might be necessary. These cleaning steps must affect only the surface to avoid leaching and re-distribution of solar wind material from the bulk of the collectors. To aid in development and identification of the most appropriate cleaning procedures each sample has to be thoroughly inspected before and after each cleaning step. Laboratory based total reflection X-ray fluorescence (TXRF) spectrometry lends itself to this task as it is a non-destructive and surface sensitive analytical method permitting analysis of elements from aluminum onward present at and near the surface of a flat substrate [4]. The suitability of TXRF has been demonstrated for several Genesis solar wind samples before and after various cleaning methods including acid treatment, gas cluster ion beam, and CO2 snow jet [5 - 7]. The latter one is non-invasive and did show some promise on one sample [5]. To investigate the feasibility of CO2 snow jet cleaning further, several flown Genesis samples were selected to be characterized before and after CO2 snow application with sample 61052 being discussed below.

Experimental investigation on cleaning of corroded ancient coins using a Nd:YAG laser

NASA Astrophysics Data System (ADS)

Zhu, Huazhong; Lu, Jian; Ni, Xiaowu; Shen, Zhonghua

2017-05-01

The objective of the work reported is to study experimentally on the removal of corrosion layer from the ancient coins using laser beam as the conservation tool. With the use of Q-switched Nd:YAG laser radiation at 1064 nm, dry laser cleaning, steam laser cleaning and chemical-assisted laser cleaning were used to find out a more suitable and efficient laser treatment for corrosion removal. Cleaning tests were performed on ancient Chinese coins. Experimental results shows that the dry laser cleaning was not successful at removing all types of corrosion crust. It was possible to remove the outer thicker layer of the corrosion products (typically known as patina), but failed on the thinner layer of cuprite. The steam laser cleaning could decrease the initial removal threshold and improve the removal efficiency especially for the oxidation with powdery structure. As for chemical-assisted laser treatment, the cleaning results demonstrate that the combination of laser and chemical reagent could provide a considerable improvement in corrosion removal compared with the conventional laser treatments. Most of the corrosion contaminant was stripped, even the cuprite layer. Moreover, no secondary pollution was formed on the cleaned surface. X-ray fluorescence was applied to determine the variation of composition of surface layer and bulk metal before and after the coins cleaned. It shows that all of the three laser treatments were efficient to reduce the chlorine concentration on the surface of the coins more than 75%.

Adventitious Carbon on Primary Sample Containment Metal Surfaces

NASA Technical Reports Server (NTRS)

Calaway, M. J.; Fries, M. D.

2015-01-01

Future missions that return astromaterials with trace carbonaceous signatures will require strict protocols for reducing and controlling terrestrial carbon contamination. Adventitious carbon (AC) on primary sample containers and related hardware is an important source of that contamination. AC is a thin film layer or heterogeneously dispersed carbonaceous material that naturally accrues from the environment on the surface of atmospheric exposed metal parts. To test basic cleaning techniques for AC control, metal surfaces commonly used for flight hardware and curating astromaterials at JSC were cleaned using a basic cleaning protocol and characterized for AC residue. Two electropolished stainless steel 316L (SS- 316L) and two Al 6061 (Al-6061) test coupons (2.5 cm diameter by 0.3 cm thick) were subjected to precision cleaning in the JSC Genesis ISO class 4 cleanroom Precision Cleaning Laboratory. Afterwards, the samples were analyzed by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Neale, Nathan R; Carroll, Gerard; Limpens, Rens

The optical properties of silicon nanocrystals (Si NCs) are a subject of intense study and continued debate. In particular, Si NC photoluminescence (PL) properties are known to depend strongly on the surface chemistry, resulting in electron-hole recombination pathways derived from the Si NC band-edge, surface-state defects, or combined NC-conjugated ligand hybrid states. In this Letter, we perform a comparison of three different saturated surface functional groups - alkyls, amides, and alkoxides - on nonthermal plasma-synthesized Si NCs. We find a systematic and size-dependent high-energy (blue) shift in the PL spectrum of Si NCs with amide and alkoxy functionalization relative tomore » alkyl. Time-resolved photoluminescence and transient absorption spectroscopies reveal no change in the excited-state dynamics between Si NCs functionalized with alkyl, amide, or alkoxide ligands, showing for the first time that saturated ligands - not only surface-derived charge-transfer states or hybridization between NC and low-lying ligand orbitals - are responsible for tuning the Si NC optical properties. To explain these PL shifts we propose that the atom bound to the Si NC surface strongly interacts with the Si NC electronic wave function and modulates the Si NC quantum confinement. These results reveal a potentially broadly applicable correlation between the optoelectronic properties of Si NCs and related quantum-confined structures based on the interaction between NC surfaces and the ligand binding group.« less

Real-time photoelectron spectroscopy study of the oxidation reaction kinetics on p-type and n-type Si (001) surfaces

NASA Astrophysics Data System (ADS)

Yu, Zhou

Silicon oxides thermally grown on Si surface are the core gate materials of metal-oxide-semiconductor field effect transistor (MOSFET). This thin oxide layer insulates the gate terminals and the transistors substrate which make MOSFET has certain advantages over those conventional junctions, such as field-effect transistor (FET) and junction field effect transistor (JFET). With an oxide insulating layer, MOSFET is able to sustain higher input impedance and the corresponding gate leakage current can be minimized. Today, though the oxidation process on Si substrate is popular in industry, there are still some uncertainties about its oxidation kinetics. On a path to clarify and modeling the oxidation kinetics, a study of initial oxidation kinetics on Si (001) surface has attracted attentions due to having a relatively low surface electron density and few adsorption channels compared with other Si surface direction. Based on previous studies, there are two oxidation models of Si (001) that extensively accepted, which are dual oxide species mode and autocatalytic reaction model. These models suggest the oxidation kinetics on Si (001) mainly relies on the metastable oxygen atom on the surface and the kinetic is temperature dependent. Professor Yuji Takakuwa's group, Surface Physics laboratory, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, observed surface strain existed during the oxidation kinetics on Si (001) and this is the first time that strain was discovered during Si oxidation. Therefore, it is necessary to explain where the strain comes from since none of previous model research included the surface strain (defects generation) into considerations. Moreover, recent developing of complementary metal-oxide-semiconductor (CMOS) requires a simultaneous oxidation process on p- and n-type Si substrate. However, none of those previous models included the dopant factor into the oxidation kinetic modeling. All of these points that further work is necessary to update and modify the traditional Si (001) oxidation models that had been accepted for several decades. To update and complement the Si (001) oxidation kinetics, an understanding of the temperature and dopant factor during initial oxidation kinetics on Si (001) is our first step. In this study, real-time photoelectron spectroscopy is applied to characterize the oxidized (001) surface and surface information was collected by ultraviolet photoelectron spectroscopy technique. By analyzing parameters such as O 2p spectra uptake, change of work function and the surface state in respect of p- and n- type Si (001) substrate under different temperature, the oxygen adsorption structure and the dopant factor can be determined. In this study, experiments with temperature gradients on p-type Si (001) were conducted and this aims to clarify the temperature dependent characteristic of Si (001) surface oxidation. A comparison of the O 2p uptake, change of work function and surface state between p-and n-type Si (001) is made under a normal temperature and these provides with the data to explain how the dopant factor impacts the oxygen adsorption structure on the surface. In the future, the study of the oxygen adsorption structure will lead to an explanation of the surface strain that discovered; therefore, fundamental of the initial oxidation on Si (001) would be updated and complemented, which would contribute to the future gate technology in MOSFET and CMOS.

SEMICONDUCTOR TECHNOLOGY A new cleaning process for the metallic contaminants on a post-CMP wafer's surface

NASA Astrophysics Data System (ADS)

Baohong, Gao; Yuling, Liu; Chenwei, Wang; Yadong, Zhu; Shengli, Wang; Qiang, Zhou; Baimei, Tan

2010-10-01

This paper presents a new cleaning process using boron-doped diamond (BDD) film anode electrochemical oxidation for metallic contaminants on polished silicon wafer surfaces. The BDD film anode electrochemical oxidation can efficiently prepare pyrophosphate peroxide, pyrophosphate peroxide can oxidize organic contaminants, and pyrophosphate peroxide is deoxidized into pyrophosphate. Pyrophosphate, a good complexing agent, can form a metal complex, which is a structure consisting of a copper ion, bonded to a surrounding array of two pyrophosphate anions. Three polished wafers were immersed in the 0.01 mol/L CuSO4 solution for 2 h in order to make comparative experiments. The first one was cleaned by pyrophosphate peroxide, the second by RCA (Radio Corporation of America) cleaning, and the third by deionized (DI) water. The XPS measurement result shows that the metallic contaminants on wafers cleaned by the RCA method and by pyrophosphate peroxide is less than the XPS detection limits of 1 ppm. And the wafer's surface cleaned by pyrophosphate peroxide is more efficient in removing organic carbon residues than RCA cleaning. Therefore, BDD film anode electrochemical oxidation can be used for microelectronics cleaning, and it can effectively remove organic contaminants and metallic contaminants in one step. It also achieves energy saving and environmental protection.

Assessment of hospital daily cleaning practices using ATP bioluminescence in a developing country.

PubMed

Zambrano, Alejandra A; Jones, Alex; Otero, Paula; Ajenjo, Maria Cristina; Labarca, Jaime A

2014-01-01

Visual assessment of surfaces may not be enough to document the level of cleanliness in the hospital setting. It is necessary to introduce quantitative methods to document the results of this practice. To evaluate the efficacy of hospital terminal cleaning procedures, using an adenosine triphosphate (ATP) bioluminescence method in a teaching hospital. During 2008 we conducted an evaluation using ATP bioluminescence LIGHTNING MVP™ (Arquimed) of external and internal housekeeping service. After conducting an initial evaluation we implemented education of cleaning practices and finally we did a post intervention evaluation. Using chi-square method we compared prior versus after cleaning, quality of cleaning performed by external versus internal personnel, single versus double terminal cleaning procedures and prior versus after intervention. A finding of three RLU or less was considered a clean surface. We performed 198 evaluations in 33 patient units and nine OR. Internal personnel accomplished 25.37% of clean surfaces before and 80% after the education intervention (p=0.01). In contrast, external personnel obtained 68.8% before and 73.33% after intervention (p=0.3). This study suggests that visual assessment is not enough to ensure quality of the process and it is necessary to document the level of cleanliness by quantitative methods. Copyright © 2014 Elsevier Editora Ltda. All rights reserved.

Assessment of terminal cleaning in pediatric isolation rooms: Options for low-resource settings.

PubMed

Dramowski, Angela; Whitelaw, Andrew; Cotton, Mark F

2016-12-01

Few studies have evaluated terminal cleaning in low-resource settings. Adequacy of pediatric isolation room terminal cleaning was evaluated using quantitative bacterial surface cultures, ATP bioluminescence assays, and fluorescent high-touch surface markers at Tygerberg Children's Hospital in South Africa (August 1, 2014-October 31, 2015). Cleaning adequacy was assessed by comparing pre- and postcleaning measurements. Influence of verbal feedback was determined by comparing cleaners' first and subsequent cleaning episodes. Cleaning methods were compared for cost, time, and feasibility. Adequacy of terminal cleaning was evaluated in 25 isolation rooms after hospitalization for pulmonary tuberculosis (n = 13), respiratory (n = 5) and enteric viruses (n = 5), pertussis (n = 1), and methicillin-resistant Staphylococcus aureus (n = 1). Mean aerobic colony counts and mean ATP relative light units declined between pre- and postcleaning evaluations (39 ± 41 to 15 ± 30 [P < .001] and 72 ± 40 to 23 ± 11 [P < .001]). Fluorescent marker removal was initially poor, but improved significantly at subsequent cleaning episodes (17 out of 78 [22%] to 121 out of 198 [61%]; P < .001); mean aerobic colony counts and ATP values also declined significantly following feedback. Cost, time, and resources required for ATP and surface cultures far exceeded that required for fluorescent markers. Adequacy of isolation room cleaning improved following feedback to cleaning staff. Fluorescent markers are an inexpensive option for cleaning evaluation and training in low-resource settings. Copyright © 2016 Association for Professionals in Infection Control and Epidemiology, Inc. Published by Elsevier Inc. All rights reserved.

Lithium diffusion at Si-C interfaces in silicon-graphene composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Odbadrakh, Khorgolkhuu; McNutt, N. W.; Nicholson, D. M.

2014-08-04

Models of intercalated Li and its diffusion in Si-Graphene interfaces are investigated using density functional theory. Results suggest that the presence of interfaces alters the energetics of Li binding and diffusion significantly compared to bare Si or Graphene surfaces. Our results show that cavities along reconstructed Si surface provide diffusion paths for Li. Diffusion barriers calculated along these cavities are significantly lower than penetration barriers to bulk Si. Interaction with Si surface results in graphene defects, creating Li diffusion paths that are confined along the cavities but have still lower barrier than in bulk Si.

Highly improved passivation of c-Si surfaces using a gradient i a-Si:H layer

NASA Astrophysics Data System (ADS)

Lee, Soonil; Ahn, Jaehyun; Mathew, Leo; Rao, Rajesh; Zhang, Zhongjian; Kim, Jae Hyun; Banerjee, Sanjay K.; Yu, Edward T.

2018-04-01

Surface passivation using intrinsic a-Si:H (i a-Si:H) films plays a key role in high efficiency c-Si heterojunction solar cells. In this study, we demonstrate improved passivation quality using i a-Si:H films with a gradient-layered structure consisting of interfacial, transition, and capping layers deposited on c-Si surfaces. The H2 dilution ratio (R) during deposition was optimized individually for the interfacial and capping layers, which were separated by a transition layer for which R changed gradually between its values for the interfacial and capping layers. This approach yielded a significant reduction in surface carrier recombination, resulting in improvement of the minority carrier lifetime from 1480 μs for mono-layered i a-Si:H passivation to 2550 μs for the gradient-layered passivation approach.

Clean Air Markets - Monitoring Surface Water Chemistry

EPA Pesticide Factsheets

Learn about how EPA uses Long Term Monitoring (LTM) and Temporily Integrated Monitoring of Ecosystems (TIME) to track the effect of the Clean Air Act Amendments on acidity of surface waters in the eastern U.S.

FI-STM study of hydrogen adsorption on Si(100) surface

NASA Astrophysics Data System (ADS)

Hua, Lu; Xiang-dong, Wang; Motai, K.; Hashizume, T.; Sakurai, T.

1992-11-01

Chemisorption of atomic hydrogen on the Si(100)2 × 1 surface has been investigated in detail by using a field ion-scanning tunneling microscope (FI-STM). The results showed that the adsorption geometry changed from the 2 × 1 monohydride phase to the 1 × 1 dihydride phase with increasing exposure of hydrogen. The data of desorption of the hydrogen-saturated Si surface showed that on annealing at 670 K the surface becomes highly disordered: the 1 × 1 dihydride structure is eliminated and the 2 × 1 reconstructed monohydride is also hardly to identify. When the temperature rises to as high as 730 K, the surface is dominated by the 2 × 1 structure with missing dimer rows, and some adatom chains occur on the Si substrate terraces. We attribute the formation of these atomic chains to an epitaxial growth of Si atoms which are formed by the dissociation of SiHx (x = 1, 2, 3 or 4) compounds on the Si surface.

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films

NASA Astrophysics Data System (ADS)

Xiao, Hai-Qing; Zhou, Chun-Lan; Cao, Xiao-Ning; Wang, Wen-Jing; Zhao, Lei; Li, Hai-Ling; Diao, Hong-Wei

2009-08-01

Al2O3 films with a thickness of about 100 nm synthesized by spin coating and thermally treated are applied for field-induced surface passivation of p-type crystalline silicon. The level of surface passivation is determined by techniques based on photoconductance. An effective surface recombination velocity below 100 cm/s is obtained on 10Ω ·cm p-type c-Si wafers (Cz Si). A high density of negative fixed charges in the order of 1012 cm-2 is detected in the Al2O3 films and its impact on the level of surface passivation is demonstrated experimentally. Furthermore, a comparison between the surface passivation achieved for thermal SiO2 and plasma enhanced chemical vapor deposition SiNx:H films on the same c-Si is presented. The high negative fixed charge density explains the excellent passivation of p-type c-Si by Al2O3.

A method for preparation and cleaning of uniformly sized arsenopyrite particles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parthasarathy, Hariprasad; Baltrus, John P; Dzombak, David A

The oxidative dissolution of sulfide minerals, such as arsenopyrite (FeAsS), is of critical importance in many geochemical systems. A comprehensive understanding of their dissolution rates entails careful preparation of the mineral surface. Measurements of dissolution rates of arsenic from arsenopyrite are dependent on the size and degree of oxidation of its particles, among other factors. In this work, a method was developed for preparation and cleaning of arsenopyrite particles with size range of 150–250 μm. Four different cleaning methods were evaluated for effectiveness based on the removal of oxidized species of iron (Fe), arsenic (As) and sulfur (S) from themore » surface. The percentage oxidation of the surface was determined using X-ray photoelectron spectroscopy (XPS), and surface stoichiometry was measured using scanning electron microscopy – energy dispersive X-ray spectroscopy (SEM-EDS). Results indicate that sonicating the arsenopyrite particles and then cleaning them with 12N HCl followed by 50% ethanol, and drying in nitrogen was the most effective method. This method was successful in greatly reducing the oxide species of Fe while completely removing oxides of As and S from the arsenopyrite surface. Although sonication and acid cleaning have been widely used for mineral preparation, the method described in this study can significantly reduce grain size heterogeneity as well as surface oxidation, which enables greater control in surface and dissolution experiments.« less

A method for preparation and cleaning of uniformly sized arsenopyrite particles

DOE PAGES

Parthasarathy, Hariprasad; Baltrus, John P; Dzombak, David A; ...

2014-10-11

The oxidative dissolution of sulfide minerals, such as arsenopyrite (FeAsS), is of critical importance in many geochemical systems. A comprehensive understanding of their dissolution rates entails careful preparation of the mineral surface. Measurements of dissolution rates of arsenic from arsenopyrite are dependent on the size and degree of oxidation of its particles, among other factors. In this work, a method was developed for preparation and cleaning of arsenopyrite particles with size range of 150–250 μm. Four different cleaning methods were evaluated for effectiveness based on the removal of oxidized species of iron (Fe), arsenic (As) and sulfur (S) from themore » surface. The percentage oxidation of the surface was determined using X-ray photoelectron spectroscopy (XPS), and surface stoichiometry was measured using scanning electron microscopy – energy dispersive X-ray spectroscopy (SEM-EDS). Results indicate that sonicating the arsenopyrite particles and then cleaning them with 12N HCl followed by 50% ethanol, and drying in nitrogen was the most effective method. This method was successful in greatly reducing the oxide species of Fe while completely removing oxides of As and S from the arsenopyrite surface. Although sonication and acid cleaning have been widely used for mineral preparation, the method described in this study can significantly reduce grain size heterogeneity as well as surface oxidation, which enables greater control in surface and dissolution experiments.« less

Effect of professional dental prophylaxis on the surface gloss and roughness of CAD/CAM restorative materials.

PubMed

Sugiyama, Toshiko; Kameyama, Atsushi; Enokuchi, Tomoka; Haruyama, Akiko; Chiba, Aoi; Sugiyama, Setsuko; Hosaka, Makoto; Takahashi, Toshiyuki

2017-06-01

This study aimed to evaluate the effect of dental prophylaxis on the surface gloss and roughness of different indirect restorative materials for computer-aided design/computer-aided manufacturing (CAD/CAM): two types of CAD/CAM composite resin blocks (Shofu Block HC and Estelite Block) and two types of CAD/CAM ceramic blocks (IPS Empress CAD and Celtra DUO). After polishing the CAD/CAM blocks and applying prophylaxis pastes, professional dental prophylaxis was performed using four different experimental protocols (n = 5 each): mechanical cleaning with Merssage Regular for 10 s four times (Group 1); four cycles of mechanical cleaning with Merssage Regular for 10 s and Merssage Fine for 10 s (Group 2); four cycles of mechanical cleaning with Merssage Regular for 10 s and Merssage Fine for 30 s (Group 3); and mechanical cleaning with Merssage Fine for 10 s four times (Group 4). A glossmeter was used to measure surface gloss before and after mechanical cleaning, and a contact stylus profilometer was used to measure surface roughness (Ra). Polishing with prophylactic paste led to a significant reduction in surface gloss and increase in surface roughness among resin composite blocks, whereas the polishing-related change in surface gloss or roughness was smaller in Celtra DUO, a zirconia-reinforced lithium silicate block. Changes in surface gloss and roughness due to polishing with a prophylactic paste containing large particles were not improved by subsequent polishing with a prophylactic paste containing fine particles. Key words: CAD/CAM, professional dental prophylaxis, prophylactic paste, surface gloss, surface roughness.

Effect of professional dental prophylaxis on the surface gloss and roughness of CAD/CAM restorative materials

PubMed Central

Sugiyama, Toshiko; Enokuchi, Tomoka; Haruyama, Akiko; Chiba, Aoi; Sugiyama, Setsuko; Hosaka, Makoto; Takahashi, Toshiyuki

2017-01-01

Background This study aimed to evaluate the effect of dental prophylaxis on the surface gloss and roughness of different indirect restorative materials for computer-aided design/computer-aided manufacturing (CAD/CAM): two types of CAD/CAM composite resin blocks (Shofu Block HC and Estelite Block) and two types of CAD/CAM ceramic blocks (IPS Empress CAD and Celtra DUO). Material and Methods After polishing the CAD/CAM blocks and applying prophylaxis pastes, professional dental prophylaxis was performed using four different experimental protocols (n = 5 each): mechanical cleaning with Merssage Regular for 10 s four times (Group 1); four cycles of mechanical cleaning with Merssage Regular for 10 s and Merssage Fine for 10 s (Group 2); four cycles of mechanical cleaning with Merssage Regular for 10 s and Merssage Fine for 30 s (Group 3); and mechanical cleaning with Merssage Fine for 10 s four times (Group 4). A glossmeter was used to measure surface gloss before and after mechanical cleaning, and a contact stylus profilometer was used to measure surface roughness (Ra). Results Polishing with prophylactic paste led to a significant reduction in surface gloss and increase in surface roughness among resin composite blocks, whereas the polishing-related change in surface gloss or roughness was smaller in Celtra DUO, a zirconia-reinforced lithium silicate block. Conclusions Changes in surface gloss and roughness due to polishing with a prophylactic paste containing large particles were not improved by subsequent polishing with a prophylactic paste containing fine particles. Key words:CAD/CAM, professional dental prophylaxis, prophylactic paste, surface gloss, surface roughness. PMID:28638554

Effects of nano-SiO{sub 2} particles on surface tracking characteristics of silicone rubber composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Yong, E-mail: tjuliuyong@tju.edu.cn; Li, Zhonglei; Du, Boxue

Compared with neat silicone rubber composites (SiRCs), SiRCs filled with nano-sized SiO{sub 2} particles at weight ratios from 0.1 to 1.0 wt. % exhibit a higher surface flashover voltage and a greater resistance to surface tracking. Scanning electron microscopy images of tracking morphologies indicate that the SiO{sub 2} particles are situated in close proximity to the polymeric chains and act as bridges to stabilize the chains and maintain the structure of the composite. Higher concentrations of nano-sized SiO{sub 2} particles, however, (above 0.3 wt. %) produce defects in the molecular network which lead to reductions in both the surface flashover voltage and the resistancemore » to surface tracking, although these reduced values are still superior to those of neat SiRCs. Therefore, SiRCs filled with nano-sized SiO{sub 2} particles, especially at an optimal weight ratio (0.1 to 0.3 wt. %), may have significant potential applications as outdoor insulators for power systems.« less

Biofunctionalized silicon nitride platform for sensing applications.

PubMed

Hoi, Hiofan; Rezaie, Salva S; Gong, Lu; Sen, Payel; Zeng, Hongbo; Montemagno, Carlo; Gupta, Manisha

2018-04-15

Silicon nitride (SiN x ) based biosensors have the potential to converge on the technological achievements of semiconductor microfabrication and biotechnology. Development of biofunctionalized SiN x surface and its integration with other devices will allow us to integrate the biosensing capability with probe control, data acquisition and data processing. Here we use the hydrogen plasma generated by inductively coupled plasma-reactive ion etching (ICP-RIE) technique to produce amino-functionality on the surface of SiN x which can then be readily used for biomolecule immobilization. ICP-RIE produces high-density hydrogen ions/radicals at low energy, which produces high-density amino group on the SiN x surface within a short duration of time and with minimal surface damage. In this work, we have demonstrated selective amination of SiN x surface as compared to Si surface. The as-activated SiN x surface can be readily biofunctionalized with both protein and oligonucleotide through covalent immobilization. N-5-azido-2-nitrobenzoyloxysuccinimide, a photoactivable amino reactive bifunctional crosslinker, was used and greater than 90% surface coverage was achieved for protein immobilization. In addition, ssDNA immobilization and hybridization with its complemented strand was shown. Thus, we demonstrate a uniform, reliable, fast and economical technique for creating biofunctionalized SiN x surface that can be used for developing compact high-sensitivity biosensors. Copyright © 2017 Elsevier B.V. All rights reserved.

Low-temperature wafer direct bonding of silicon and quartz glass by a two-step wet chemical surface cleaning

NASA Astrophysics Data System (ADS)

Wang, Chenxi; Xu, Jikai; Zeng, Xiaorun; Tian, Yanhong; Wang, Chunqing; Suga, Tadatomo

2018-02-01

We demonstrate a facile bonding process for combining silicon and quartz glass wafers by a two-step wet chemical surface cleaning. After a post-annealing at 200 °C, strong bonding interfaces with no defects or microcracks were obtained. On the basis of the detailed surface and bonding interface characterizations, the bonding mechanism was explored and discussed. The amino groups terminated on the cleaned surfaces might contribute to the bonding strength enhancement during the annealing. This cost-effective bonding process has great potentials for silicon- and glass-based heterogeneous integrations without requiring a vacuum system.

Characterization of Self-Assembled Monolayers on a Ruthenium Surface

PubMed Central

2017-01-01

We have modified and stabilized the ruthenium surface by depositing a self-assembled monolayer (SAM) of 1-hexadecanethiol on a polycrystalline ruthenium thin film. The growth mechanism, dynamics, and stability of these monolayers were studied. SAMs, deposited under ambient conditions, on piranha-cleaned and piranha + H2SO4 cleaned substrates were compared to monolayers formed on H-radical-cleaned Ru surfaces. We found that alkanethiols on H-radical-cleaned Ru formed densely packed monolayers that remained stable when kept in a nitrogen atmosphere. X-ray photoelectron spectroscopy (XPS) shows a distinct sulfur peak (BE = 162.3 eV), corresponding to metal–sulfur bonding. When exposed to ambient conditions, the SAM decayed over a period of hours. PMID:28585831

Metal sponge for cryosorption pumping applications

DOEpatents

Myneni, G.R.; Kneisel, P.

1995-12-26

A system has been developed for adsorbing gases at high vacuum in a closed area. The system utilizes large surface clean anodized metal surfaces at low temperatures to adsorb the gases. The large surface clean anodized metal is referred to as a metal sponge. The metal sponge generates or maintains the high vacuum by increasing the available active cryosorbing surface area. 4 figs.

Modeling, investigation and formulation of hydrophobic coatings for potential self-cleaning applications

NASA Astrophysics Data System (ADS)

Rios, Pablo Fabian

Self-cleaning surfaces have received a great deal of attention, both in research and commercial applications. Transparent and non-transparent self-cleaning surfaces are highly desired. The Lotus flower is a symbol of purity in Asian cultures, even when rising from muddy waters it stays clean and untouched by dirt. The Lotus leaf "self-cleaning" surface is hydrophobic and rough, showing a two-layer morphology. While hydrophobicity produces a high contact angle, surface morphology reduces the adhesion of dirt and water to the surface, thus water drops slide easily across the leaf carrying the dirt particles with them. Nature example in the Lotus-effect and extensive scientific research on related fields have rooted wide acceptance that high hydrophobicity can be obtained only by a proper combination of surface chemistry and roughness. Most researchers relate hydrophobicity to a high contact angle. However, the contact angle is not the only parameter that defines liquid-solid interactions. An additional parameter, the sliding angle, related to the adhesion between the liquid drop and the solid surface is also important in cases where liquid sliding is involved, such as self-cleaning applications. In this work, it is postulated that wetting which is related to the contact angle, and interfacial adhesion, which is related to the sliding angle, are interdependent phenomena and have to be considered simultaneously. A variety of models that relate the sliding angle to forces developed along the contact line between a liquid drop and a solid surface have been proposed in the literature. A new model is proposed here that quantifies the drop sliding phenomenon, based also on the interfacial adhesion across the contact area of the liquid/solid interface. The effects of roughness and chemical composition on the contact and sliding angles of hydrophobic smooth and rough surfaces were studied theoretically and experimentally. The validity of the proposed model was investigated and compared with the existing models. Ultra-hydrophobic non-transparent and transparent coatings for potential self-cleaning applications were produced using hydrophobic chemistry and different configurations of roughening micro and nano-particles, however they present low adhesion and durability. Durability and stability enhancement of such coatings was attempted and improved by different methods.

CPV performance versus soiling effects: Cleaning policies

NASA Astrophysics Data System (ADS)

Sanchez, D.; Trujillo, P.; Martinez, M.; Ferrer, J. P.; Rubio, F.

2012-10-01

In order to improve the performance of the CPV Plants in a cost effective way it is important to define the best cleaning policies, analyzing the effect of soiling in the surface of CPV modules. The energy generation of a CPV technology based in Fresnel Lens improves up to 7% when the surface of the module is cleaned. Some experimental measurements have been carried out over CPV modules and a model has been defined to analyze what is the best cleaning policy for that Technology in Puertollano. The power losses because of soiling and the critical time until the power losses stabilizes are obtained from the measurements; they are used as an input for the simulation. Using an established cleaning cost and the feeding tariff from Spain in 2007 it has been obtained that cleaning only reports a profit during the summer. The conclusion of the work is that the cleaning tasks have to be carefully planned together with the meteorological forecast in order to maximize the investment made in the cleaning.

Self-assembly of nanosize coordination cages on si(100) surfaces.

PubMed

Busi, Marco; Laurenti, Marco; Condorelli, Guglielmo G; Motta, Alessandro; Favazza, Maria; Fragalà, Ignazio L; Montalti, Marco; Prodi, Luca; Dalcanale, Enrico

2007-01-01

Bottom-up fabrication of 3D organic nanostructures on Si(100) surfaces has been achieved by a two-step procedure. Tetradentate cavitand 1 was grafted on the Si surface together with 1-octene (Oct) as a spatial spectator by photochemical hydrosilylation. Ligand exchange between grafted cavitand 1 and self-assembled homocage 2, derived from cavitand 5 bearing a fluorescence marker, led to the formation of coordination cages on Si(100). Formation, quantification, and distribution of the nanoscale molecular containers on a silicon surface was assessed by using three complementary analytical techniques (AFM, XPS, and fluorescence) and validated by control experiments on cavitand-free silicon surfaces. Interestingly, the fluorescence of pyrene at approximately 4 nm above the Si(100) surface can be clearly observed.

Nano-textured fluidic biochip as biological filter for selective survival of neuronal cells.

PubMed

Han, Hsieh-Cheng; Lo, Hung-Chun; Wu, Chia-Yu; Chen, Kuei-Hsien; Chen, Li-Chyong; Ou, Keng-Liang; Hosseinkhani, Hossein

2015-06-01

This is an innovative study to engineer biological filter to evaluate the effect of template surface structure and physiochemical properties that can be used for wide variety of applications in biological, health care as well as environmental protection. Specifically, planar silicon (Si) wafer and arrayed Si nano-tips (SiNT) templates were fabricated and coated with gold for various lengths of time to study the effect of surface charge, surface roughness, and hydrophilicity on biological activity of rat pheochromocytoma cell lines PC12. The initial growth and proliferation of PC12 cells on Si and SiNT templates showed an antipathy for the ultra-sharp SiNTs templates. In contrast, the same cells demonstrated a preferable adherence to and proliferation on planar Si templates, resulting in higher cell densities by three orders of magnitude than those on SiNT templates. It is hypothesized that SiNTs array does generate nano-fluidic effect such that the effective contact region for aqueous solution on SiNTs is lower than that on planar Si templates, thus decreasing adsorbable area for cell viability and survival. Moreover, the effect of the gold coating on cell number density was analyzed in terms of the surface roughness, zeta potential and wetting properties of the templates. It was determined that surface charge, as measured by the zeta potential, strongly correlated with the trend observed in the surface cell density, whereas no such correlation was observed for surface roughness or wetting properties in the ranges of our experiment conditions. © 2014 Wiley Periodicals, Inc.